High-acoustic-impedance tantalum oxide layers for insulating acoustic reflectors.

PubMed

Capilla, Jose; Olivares, Jimena; Clement, Marta; Sangrador, Jesús; Iborra, Enrique; Devos, Arnaud

2012-03-01

This work describes the assessment of the acoustic properties of sputtered tantalum oxide films intended for use as high-impedance films of acoustic reflectors for solidly mounted resonators operating in the gigahertz frequency range. The films are grown by sputtering a metallic tantalum target under different oxygen and argon gas mixtures, total pressures, pulsed dc powers, and substrate biases. The structural properties of the films are assessed through infrared absorption spectroscopy and X-ray diffraction measurements. Their acoustic impedance is assessed by deriving the mass density from X-ray reflectometry measurements and the acoustic velocity from picosecond acoustic spectroscopy and the analysis of the frequency response of the test resonators.

Synthesis, Consolidation and Characterization of Sol-gel Derived Tantalum-Tungsten Oxide Thermite Composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cervantes, O

2010-06-01

Energetic composite powders consisting of sol-gel (SG) derived nanostructured tungsten oxide were produced with various amounts of micrometer-scale tantalum fuel metal. Such energetic composite powders were ignition-tested and results show that the powders are not sensitive to friction, spark and/or impact ignition. Initial consolidation experiments, using the High Pressure Spark Plasma Sintering (HPSPS) technique, on the SG derived nanostructured tungsten oxide produced samples with higher relative density than can be achieved with commercially available tungsten oxide. The SG derived nanostructured tungsten oxide with immobilized tantalum fuel metal (Ta - WO3) energetic composite was consolidated to a density of 9.17 g·cm-3more » or 93% relative density. In addition, those samples were consolidated without significant pre-reaction of the constituents, thus retaining their stored chemical energy.« less

Achieving surface chemical and morphologic alterations on tantalum by plasma electrolytic oxidation.

PubMed

Goularte, Marcelo Augusto Pinto Cardoso; Barbosa, Gustavo Frainer; da Cruz, Nilson Cristino; Hirakata, Luciana Mayumi

2016-12-01

Search for materials that may either replace titanium dental implants or constitute an alternative as a new dental implant material has been widely studied. As well, the search for optimum biocompatible metal surfaces remains crucial. So, the aim of this work is to develop an oxidized surface layer on tantalum using plasma electrolytic oxidation (PEO) similar to those existing on oral implants been marketed today. Cleaned tantalum samples were divided into group 1 (control) and groups 2, 3, and 4 (treated by PEO for 1, 3, and 5 min, respectively). An electrolytic solution diluted in 1-L deionized water was used for the anodizing process. Then, samples were washed with anhydrous ethyl alcohol and dried in the open air. For complete anodic treatment disposal, the samples were immersed in acetone altogether, taken to the ultrasonic tank for 10 min, washed again in distilled water, and finally air-dried. For the scanning electron microscopy (SEM) analysis, all samples were previously coated with gold; the salt deposition analysis was conducted with an energy-dispersive X-ray spectroscopy (EDS) system integrated with the SEM unit. SEM images confirmed the changes on tantalum strips surface according to different exposure times while EDS analysis confirmed increased salt deposition as exposure time to the anodizing process also increased. PEO was able to produce both surface alteration and salt deposition on tantalum strips similar to those existing on oral implants been marketed today.

Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide.

PubMed

Gritsenko, Vladimir A; Perevalov, Timofey V; Voronkovskii, Vitalii A; Gismatulin, Andrei A; Kruchinin, Vladimir N; Aliev, Vladimir Sh; Pustovarov, Vladimir A; Prosvirin, Igor P; Roizin, Yakov

2018-01-31

Optical and transport properties of nonstoichiometric tantalum oxide thin films grown by ion beam deposition were investigated in order to understand the dominant charge transport mechanisms and reveal the nature of traps. The TaO x films composition was analyzed by X-ray photoelectron spectroscopy and by quantum-chemistry simulation. From the optical absorption and photoluminescence measurements and density functional theory simulations, it was concluded that the 2.75 eV blue luminescence excited in a TaO x by 4.45 eV photons, originates from oxygen vacancies. These vacancies are also responsible for TaO x conductivity. The thermal trap energy of 0.85 eV determined from the transport experiments coincides with the half of the Stokes shift of the blue luminescence band. It is argued that the dominant charge transport mechanism in TaO x films is phonon-assisted tunneling between the traps.

Antibacterial properties and cytocompatibility of tantalum oxide coatings with different silver content

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Heng-Li; Chang, Yin-Yu, E-mail: yinyu@mail2000.com.tw; Chen, Hung-Jui

Tantalum (Ta) oxides and their coatings have been proved to increase their applications in the biomedical fields by improving osseointegration and wear resistance. In this study, Ta oxide coatings containing different proportions of Ag are deposited on SS304 materials. A twin-gun magnetron sputtering system is used to deposit the tantalum oxide-Ag coating. In this study, Staphylococcus aureus, which exhibits physiological commensalism on the human skin, nares, and mucosal and oral areas, is chosen as the model for in vitro antibacterial analyses via a fluorescence staining method using Syto9. The cytocompatibility and adhesive morphology of human skin fibroblast cells (CCD-966SK) onmore » the coatings are also determined by using the microculture tetrazolium assay. This study shows that Ta{sub 2}O{sub 5} and Ta{sub 2}O{sub 5}-Ag coatings with 12.5 at. % of Ag exhibit improved antibacterial effects against S. aureus and have good skin fibroblast cell cellular biocompatibility.« less

Thin film ion conducting coating

DOEpatents

Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

1989-01-01

Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

Tantalum-tungsten oxide thermite composites prepared by sol-gel synthesis and spark plasma sintering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuntz, Joshua D.; Gash, Alexander E.; Cervantes, Octavio G.

2010-08-15

Energetic composite powders consisting of sol-gel derived nanostructured tungsten oxide were produced with various amounts of micrometer-scale tantalum fuel metal. Such energetic composite powders were ignition-tested and the results show that the powders are not sensitive to friction, spark and/or impact ignition. Initial consolidation experiments, using the High-Pressure Spark Plasma Sintering (HPSPS) technique, on the sol-gel derived nanostructured tungsten oxide produced samples with higher relative density than can be achieved with commercially available tungsten oxide. The sol-gel derived nanostructured tungsten oxide with immobilized tantalum fuel metal (Ta-WO{sub 3}) energetic composite was consolidated to a density of 9.17 g cm{sup -3}more » or 93% relative density. In addition, those samples were consolidated without significant pre-reaction of the constituents, thus retaining their stored chemical energy. (author)« less

Tantalum-Tungsten Oxide Thermite Composite Prepared by Sol-Gel Synthesis and Spark Plasma Sintering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cervantes, O; Kuntz, J; Gash, A

2009-02-13

Energetic composite powders consisting of sol-gel derived nanostructured tungsten oxide were produced with various amounts of micrometer-scale tantalum fuel metal. Such energetic composite powders were ignition tested and results show that the powders are not sensitive to friction, spark and/or impact ignition. Initial consolidation experiments, using the High Pressure Spark Plasma Sintering (HPSPS) technique, on the sol-gel derived nanostructured tungsten oxide produced samples with higher relative density than can be achieved with commercially available tungsten oxide. The sol-gel derived nanostructured tungsten oxide with immobilized tantalum fuel metal (Ta - WO{sub 3}) energetic composite was consolidated to a density of 9.17more » g.cm{sup -3} or 93% relative density. In addition those parts were consolidated without significant pre-reaction of the constituents, thus the sample retained its stored chemical energy.« less

The structure, bond strength and apatite-inducing ability of micro-arc oxidized tantalum and their response to annealing

NASA Astrophysics Data System (ADS)

Wang, Cuicui; Wang, Feng; Han, Yong

2016-01-01

In this study, the tantalum oxide coatings were formed on pure tantalum (Ta) by micro-arc oxidation (MAO) in electrolytic solutions of calcium acetate and β-glycerophosphate disodium, and the effect of the applied voltage on the microstructure and bond strength of the MAO coatings was systematically investigated. The effect of annealing treatment on the microstructure, bond strength and apatite-inducing ability of the MAO coatings formed at 350 and 450 V was also studied. The study revealed that during the preparation of tantalum oxide coatings on Ta substrate by MAO, the applied voltage considerably affected the phase components, morphologies and bond strength of the coatings, but had little effect on surface chemical species. After annealing treatment, newly formed CaTa4O11 phase mainly contributed to the much more stronger apatite-inducing ability of the annealed tantalum oxide coatings than those that were not annealed. The better apatite-inducing ability of the MAO coatings formed at 450 V compared to those formed at 350 V was attributed to the less amorphous phase and more crystalline phase as well as more Ca and P contained in the MAO coatings with increasing the applied voltage.

Ion beam and dual ion beam sputter deposition of tantalum oxide films

NASA Astrophysics Data System (ADS)

Cevro, Mirza; Carter, George

1994-11-01

Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

NASA Astrophysics Data System (ADS)

Cevro, Mirza; Carter, George

1995-02-01

Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

Fabrication of a Tantalum-Based Josephson Junction for an X-Ray Detector

NASA Astrophysics Data System (ADS)

Morohashi, Shin'ichi; Gotoh, Kohtaroh; Yokoyama, Naoki

2000-06-01

We have fabricated a tantalum-based Josephson junction for an X-ray detector. The tantalum layer was selected for the junction electrode because of its long quasiparticle lifetime, large X-ray absorption efficiency and stability against thermal cycling. We have developed a buffer layer to fabricate the tantalum layer with a body-centered cubic structure. Based on careful consideration of their superconductivity, we have selected a niobium thin layer as the buffer layer for fabricating the tantalum base electrode, and a tungsten thin layer for the tantalum counter electrode. Fabricated Nb/AlOx-Al/Ta/Nb and Nb/Ta/W/AlOx-Al/Ta/Nb Josephson junctions exhibited current-voltage characteristics with a low subgap leakage current.

Dissolution kinetics of small amounts of oxygen in tantalum alloy T-111 and internal oxide displacement reactions during annealing

NASA Technical Reports Server (NTRS)

Stecura, S.

1976-01-01

Oxygen was added to T-111 (Ta-8W-2Hf, wt. %) at 820 and 990 C at an oxygen pressure of about 0.0003 torr. The technique employed permitted predetermined and reproducible doping of T-111 up to 3.0 at. % oxygen. Based on the temperature dependence of the doping reaction, it is concluded that the initial rates of oxygen pickup are probably controlled by solution of oxygen into the T-111 lattice. Although hafnium oxides are more stable than those of tantalum or tungsten, analyses of extracted residues indicate that the latter oxides predominate in the as-doped specimens, presumably because of the higher concentrations of tantalum and tungsten in the alloy. However, high-temperature annealing promotes gettering of dissolved oxygen and of other oxides to form hafnium oxides. Small amounts of tantalum and tungsten oxides were still present after high-temperature annealing. Tungsten oxide (WO3) volatilizes slightly from the surface of T-111 at 990 C. The vaporization of WO3 has no apparent affect on the doping reaction.

Transparent Oxide Thin-Film Transistors: Production, Characterization and Integration

NASA Astrophysics Data System (ADS)

Barquinha, Pedro Miguel Candido

This dissertation is devoted to the study of the emerging area of transparent electronics, summarizing research work regarding the development of n-type thin-film transistors (TFTs) based on sputtered oxide semiconductors. All the materials are produced without intentional substrate heating, with annealing temperatures of only 150-200 °C being used to optimize transistor performance. The work is based on the study and optimization of active semiconductors from the gallium-indium-zinc oxide system, including both the binary compounds Ga2O3, In2O3 and ZnO, as well as ternary and quaternary oxides based on mixtures of those, such as IZO and GIZO with different atomic ratios. Several topics are explored, including the study and optimization of the oxide semiconductor thin films, their application as channel layers on TFTs and finally the implementation of the optimized processes to fabricate active matrix backplanes to be integrated in liquid crystal display (LCD) prototypes. Sputtered amorphous dielectrics with high dielectric constant (high-kappa) based on mixtures of tantalum-silicon or tantalum-aluminum oxides are also studied and used as the dielectric layers on fully transparent TFTs. These devices also include transparent and highly conducting IZO thin films as source, drain and gate electrodes. Given the flexibility of the sputtering technique, oxide semiconductors are analyzed regarding several deposition parameters, such as oxygen partial pressure and deposition pressure, as well as target composition. One of the most interesting features of multicomponent oxides such as IZO and GIZO is that, due to their unique electronic configuration and carrier transport mechanism, they allow to obtain amorphous structures with remarkable electrical properties, such as high hall-effect mobility that exceeds 60 cm2 V -1 s-1 for IZO. These properties can be easily tuned by changing the processing conditions and the atomic ratios of the multicomponent oxides, allowing to

Process for manufacturing tantalum capacitors

DOEpatents

Lauf, Robert J.; Holcombe, Cressie E.; Dykes, Norman L.

1993-01-01

A process for manufacturing tantalum capacitors in which microwave energy is used to sinter a tantalum powder compact in order to achieve higher surface area and improved dielectric strength. The process comprises cold pressing tantalum powder with organic binders and lubricants to form a porous compact. After removal of the organics, the tantalum compact is heated to 1300.degree. to 2000.degree. C. by applying microwave radiation. Said compact is then anodized to form a dielectric oxide layer and infiltrated with a conductive material such as MnO.sub.2. Wire leads are then attached to form a capacitor to said capacitor is hermetically packaged to form the finished product.

Process for manufacturing tantalum capacitors

DOEpatents

Lauf, R.J.; Holcombe, C.E.; Dykes, N.L.

1993-02-02

A process for manufacturing tantalum capacitors in which microwave energy is used to sinter a tantalum powder compact in order to achieve higher surface area and improved dielectric strength. The process comprises cold pressing tantalum powder with organic binders and lubricants to form a porous compact. After removal of the organics, the tantalum compact is heated to 1,300 to 2,000 C by applying microwave radiation. Said compact is then anodized to form a dielectric oxide layer and infiltrated with a conductive material such as MnO[sub 2]. Wire leads are then attached to form a capacitor to said capacitor is hermetically packaged to form the finished product.

Tantalum-based semiconductors for solar water splitting.

PubMed

Zhang, Peng; Zhang, Jijie; Gong, Jinlong

2014-07-07

Solar energy utilization is one of the most promising solutions for the energy crises. Among all the possible means to make use of solar energy, solar water splitting is remarkable since it can accomplish the conversion of solar energy into chemical energy. The produced hydrogen is clean and sustainable which could be used in various areas. For the past decades, numerous efforts have been put into this research area with many important achievements. Improving the overall efficiency and stability of semiconductor photocatalysts are the research focuses for the solar water splitting. Tantalum-based semiconductors, including tantalum oxide, tantalate and tantalum (oxy)nitride, are among the most important photocatalysts. Tantalum oxide has the band gap energy that is suitable for the overall solar water splitting. The more negative conduction band minimum of tantalum oxide provides photogenerated electrons with higher potential for the hydrogen generation reaction. Tantalates, with tunable compositions, show high activities owning to their layered perovskite structure. (Oxy)nitrides, especially TaON and Ta3N5, have small band gaps to respond to visible-light, whereas they can still realize overall solar water splitting with the proper positions of conduction band minimum and valence band maximum. This review describes recent progress regarding the improvement of photocatalytic activities of tantalum-based semiconductors. Basic concepts and principles of solar water splitting will be discussed in the introduction section, followed by the three main categories regarding to the different types of tantalum-based semiconductors. In each category, synthetic methodologies, influencing factors on the photocatalytic activities, strategies to enhance the efficiencies of photocatalysts and morphology control of tantalum-based materials will be discussed in detail. Future directions to further explore the research area of tantalum-based semiconductors for solar water splitting

The tantalum-cased tantalum capacitor

NASA Technical Reports Server (NTRS)

Moynihan, J. D.

1977-01-01

Tantalum-cased tantalum capacitors were tested with regard to temperature stability, capacitance ratio, surge current capabilities, shock, vibration, and thermal shock. They were found to be superior to the conventional wet slug tantalum capacitor cased in silver, since they are more resistant to sulfuric acid. The tantalum-cased tantalum capacitors are widely accepted for use in critical electronic equipment because of their excellent performance and reliability.

Synthesis of Monodispersed Tantalum(V) oxide Nanospheres by an Ethylene Glycol Mediated Route

EPA Science Inventory

Tantalum(V) oxide (Ta2O5) nanospheres have been synthesized by a very simple ethylene glycol mediated route. The two-step process involves the formation of glycolate nanoparticles and their subsequent hydrolysis and calcination to generate the final Ta2O5 nanospheres. The synthes...

Niobium and tantalum

USGS Publications Warehouse

Schulz, Klaus J.; Piatak, Nadine M.; Papp, John F.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Niobium and tantalum are transition metals that are almost always found together in nature because they have very similar physical and chemical properties. Their properties of hardness, conductivity, and resistance to corrosion largely determine their primary uses today. The leading use of niobium (about 75 percent) is in the production of high-strength steel alloys used in pipelines, transportation infrastructure, and structural applications. Electronic capacitors are the leading use of tantalum for high-end applications, including cell phones, computer hard drives, and such implantable medical devices as pacemakers. Niobium and tantalum are considered critical and strategic metals based on the potential risks to their supply (because current production is restricted to only a few countries) and the significant effects that a restriction in supply would have on the defense, energy, high-tech industrial, and medical sectors.The average abundance of niobium and tantalum in bulk continental crust is relatively low—8.0 parts per million (ppm) niobium and 0.7 ppm tantalum. Their chemical characteristics, such as small ionic size and high electronic field strength, significantly reduce the potential for these elements to substitute for more common elements in rock-forming minerals and make niobium and tantalum essentially immobile in most aqueous solutions. Niobium and tantalum do not occur naturally as pure metals but are concentrated in a variety of relatively rare oxide and hydroxide minerals, as well as in a few rare silicate minerals. Niobium is primarily derived from the complex oxide minerals of the pyrochlore group ((Na,Ca,Ce)2(Nb,Ti,Ta)2(O,OH,F)7), which are found in some alkaline granite-syenite complexes (that is, igneous rocks containing sodium- or potassium-rich minerals and little or no quartz) and carbonatites (that is, igneous rocks that are more than 50 percent composed of primary carbonate minerals, by volume). Tantalum is derived mostly from the

Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors

DOE PAGES

Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul; ...

2016-02-02

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. Furthermore, the resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately.

Packed bed carburization of tantalum and tantalum alloy

DOEpatents

Lopez, Peter C.; Rodriguez, Patrick J.; Pereyra, Ramiro A.

1999-01-01

Packed bed carburization of a tantalum or tantalum alloy object. A method for producing corrosion-resistant tantalum or tantalum alloy objects is described. The method includes the steps of placing the object in contact with a carburizing pack, heating the packed object in vacuum furnace to a temperature whereby carbon from the pack diffuses into the object forming grains with tantalum carbide along the grain boundaries, and etching the surface of the carburized object. This latter step removes tantalum carbides from the surface of the carburized tantalum object while leaving the tantalum carbide along the grain boundaries.

Packed bed carburization of tantalum and tantalum alloy

DOEpatents

Lopez, P.C.; Rodriguez, P.J.; Pereyra, R.A.

1999-06-29

Packed bed carburization of a tantalum or tantalum alloy object is disclosed. A method for producing corrosion-resistant tantalum or tantalum alloy objects is described. The method includes the steps of placing the object in contact with a carburizing pack, heating the packed object in vacuum furnace to a temperature whereby carbon from the pack diffuses into the object forming grains with tantalum carbide along the grain boundaries, and etching the surface of the carburized object. This latter step removes tantalum carbides from the surface of the carburized tantalum object while leaving the tantalum carbide along the grain boundaries. 4 figs.

Novel hierarchical tantalum oxide-PDMS hybrid coating for medical implants: One pot synthesis, characterization and modulation of fibroblast proliferation.

PubMed

Tran, Phong A; Fox, Kate; Tran, Nhiem

2017-01-01

Surface properties such as morphology, roughness and charge density have a strong influence on the interaction of biomaterials and cells. Hierarchical materials with a combination of micron/submicron and nanoscale features for coating of medical implants could therefore have significant potential to modulate cellular responses and eventually improve the performance of the implants. In this study, we report a simple, one pot wet chemistry preparation of a hybrid coating system with hierarchical surface structures consisting of polydimethylsiloxane (PDMS) and tantalum oxide. Medical grade, amine functional PDMS was mixed with tantalum ethoxide which subsequently formed Ta 2 O 5 in situ through hydrolysis and condensation during coating process. The coatings were characterized by SEM, EDS, XPS, confocal scanning microscopy, contact angle measurement and in vitro cell culture. Varying PDMS and tantalum ethoxide ratios resulted in coatings of different surface textures ranging from smooth to submicro- and nano-structured. Strikingly, hierarchical surfaces containing both microscale (1-1.5μm) and nanoscale (86-163nm) particles were found on coatings synthesized with 20% and 40% (v/v) tantalum ethoxide. The coatings were similar in term of hydrophobicity but showed different surface roughness and chemical composition. Importantly, higher cell proliferation was observed on hybrid surface with hierarchical structures compared to pure PDMS or pure tantalum oxide. The coating process is simple, versatile, carried out under ambient condition and requires no special equipment. Copyright © 2016 Elsevier Inc. All rights reserved.

Inkjet printing of metal-oxide-based transparent thin-film capacitors

NASA Astrophysics Data System (ADS)

Matavž, A.; Malič, B.; Bobnar, V.

2017-12-01

We report on the inkjet printing of transparent, thin-film capacitors (TTFCs) composed of indium-zinc-oxide electrodes and a tantalum-oxide-based dielectric on glass substrates. The printing parameters were adapted for the sequential deposition of functional layers, resulting in approximately 100-nm-thick transparent capacitors with a uniform thickness. The relatively high electrical resistivity of the electrodes is reflected in the frequency dispersive dielectric behaviour, which is explained in terms of an equivalent circuit. The resistivity of the electrode strongly decreases with the number of printing passes; consequently, any misalignment of the printed layers is detected in the measured response. At low frequency, the TTFCs show a stable intrinsic dielectric response and a high capacitance density of ˜280 nF/cm2. The good dielectric performance as well as the low leakage-current density (8 × 10-7 A/cm2 at 1 MV cm-1) of our capacitors indicates that inkjet printing can be used to produce all-printed, high-quality electrical devices.

Direct electroplating of copper on tantalum from ionic liquids in high vacuum: origin of the tantalum oxide layer.

PubMed

Schaltin, Stijn; D'Urzo, Lucia; Zhao, Qiang; Vantomme, André; Plank, Harald; Kothleitner, Gerald; Gspan, Christian; Binnemans, Koen; Fransaer, Jan

2012-10-21

In this paper, it is shown that high vacuum conditions are not sufficient to completely remove water and oxygen from the ionic liquid 1-ethyl-3-methylimidazolium chloride. Complete removal of water demands heating above 150 °C under reduced pressure, as proven by Nuclear Reaction Analysis (NRA). Dissolved oxygen gas can only be removed by the use of an oxygen scavenger such as hydroquinone, despite the fact that calculations show that oxygen should be removed completely by the applied vacuum conditions. After applying a strict drying procedure and scavenging of molecular oxygen, it was possible to deposit copper directly on tantalum without the presence of an intervening oxide layer.

Low emissivity high-temperature tantalum thin film coatings for silicon devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rinnerbauer, Veronika; Senkevich, Jay J.; Joannopoulos, John D.

The authors study the use of thin ( ~230 nm ) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation loss, which is one of the dominant loss mechanisms at high temperatures (above 700 °C ). The key factors to achieve such a coating are low emissivity in the near infrared and superior thermal stability at high operating temperatures. The authors investigated the emissivity of Ta coatings deposited on Si with respect to deposition parameters, and annealing conditions, and temperature. The authors found thatmore » after annealing at temperatures ≥900 °C the emissivity in the near infrared ( 1–3 μm ) was reduced by a factor of 2 as compared to bare Si. In addition, the authors measured thermal emission at temperatures from 700 to 1000 °C , which is stable up to a heater temperature equal to the annealing temperature. Furthermore, Auger electron spectroscopy profiles of the coatings before and after annealing were taken to evaluate thermal stability. A thin (about 70 nm) Ta₂O₅ layer was found to act as an efficient diffusion barrier between the Si substrate and the Ta layer to prevent Si diffusion.« less

Development of a high efficiency thin silicon solar cell

NASA Technical Reports Server (NTRS)

Lindmayer, J.; Wrigley, C. Y.

1977-01-01

A key to the success of this program was the breakthrough development of a technology for producing ultra-thin silicon slices which are very flexible, resilient, and tolerant of moderate handling abuse. Experimental topics investigated were thinning technology, gaseous junction diffusion, aluminum back alloying, internal reflectance, tantalum oxide anti-reflective coating optimization, slice flexibility, handling techniques, production rate limiting steps, low temperature behavior, and radiation tolerance.

High quality transparent conducting oxide thin films

DOEpatents

Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

2012-08-28

A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES

DOEpatents

Bowman, M.G.; Krikorian, N.H.

1961-10-01

A method is described for forming a non-corrosive silicide coating on tantalum. The coating is made through the heating of trirhenium silicides in contact with the tantalum object to approximately 1400 deg C at which temperature trirhenium silicide decomposes into rhenium and gaseous silicons. The silicon vapor reacts with the tantalum surface to form a tantalum silicide layer approximately 10 microns thick. (AEC)

Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

NASA Astrophysics Data System (ADS)

Hwang, Ah Young; Kim, Sang Tae; Ji, Hyuk; Shin, Yeonwoo; Jeong, Jae Kyeong

2016-04-01

Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 °C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm2/V s, subthreshold swing (SS) of 0.39 V/decade, threshold voltage (VTH) of 1.5 V, and ION/OFF ratio of ˜107. A significant improvement in the field-effect mobility (up to ˜33.5 cm2/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, VTH, or ION/OFF ratio due to the presence of a highly ordered microstructure.

Fabrication of tantalum and nitrogen codoped ZnO (Ta, N-ZnO) thin films using the electrospay: twin applications as an excellent transparent electrode and a field emitter.

PubMed

Mahmood, Khalid; Park, Seung Bin; Sung, Hyung Jin

2013-05-01

The realization of stable p-type nitrogen-doped ZnO thin films with durable and controlled growth is important for the fabrication of nanoscale electronic and optoelectronic devices. ZnO thin films codoped with tantalum and nitrogen (Ta, N-ZnO) were fabricated by using the electrospraying method at an atmospheric pressure. X-ray diffraction (XRD) studies demonstrated that all the prepared films were polycrystalline in nature with hexagonal wurtzite structure. In addition, a shift in the XRD patterns was observed, and the crystal orientation was changed at a certain amount of nitrogen (>6 at.%) in the starting solution. Analysis of X-ray diffraction patterns and X-ray photoelectron spectra revealed that nitrogen which was combined with the zinc atom (N-Zn) was successfully doped into the ZnO crystal lattice. It was also observed that 2 at.% tantalum and 6 at.% nitrogen (2 at.% Ta and 6 at.% N) were the optimal dopant amounts to achieve the minimum resistivity of about 9.70 × 10(-5) Ω cm and the maximum transmittance of 98% in the visible region. Consequently, the field-emission characteristics of such a Ta, N-ZnO emitter can exhibit the higher current density of 1.33 mA cm(-2), larger field-enhancement factor (β) of 4706, lower turn-on field of 2.6 V μm(-1), and lower threshold field of 3.5 V μm(-1) attributed to the enhanced conductivity and better crystallinity of films. Moreover, the obtained values of resistivity were closest to the lowest resistivity values among the doped ZnO films as well as to the indium tin oxide (ITO) resistivity values that were previously studied. We confirmed that the tantalum and nitrogen atoms substitution in the ZnO lattice induced positive effects in terms of enhancing the free carrier concentration which will further improve the electrical, optical, and field-emission properties. The proposed electrospraying method was well suitable for the fabrication of Ta, N-ZnO thin films at optimum conditions with superior electrical

Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration

NASA Astrophysics Data System (ADS)

Chen, G. S.; Chen, S. T.

2000-06-01

Tantalum-related thin films containing different amounts of nitrogen are sputter deposited at different argon-to-nitrogen flow rate ratios on (100) silicon substrates. Using x-ray diffractometry, transmission electron microscopy, composition and resistivity analyses, and bending-beam stress measurement technique, this work examines the impact of varying the nitrogen flow rate, particularly on the crystal structure, composition, resistivity, and residual intrinsic stress of the deposited Ta2N thin films. With an adequate amount of controlled, reactive nitrogen in the sputtering gas, thin films of the tantalum nitride of nominal formula Ta2N are predominantly amorphous and can exist over a range of nitrogen concentrations slightly deviated from stoichiometry. The single-layered quasi-amorphous Ta2N (a-Ta2N) thin films yield intrinsic compressive stresses in the range 3-5 GPa. In addition, the use of the 40-nm-thick a-Ta2N thin films with different nitrogen atomic concentrations (33% and 36%) and layering designs as diffusion barriers between silicon and copper are also evaluated. When subjected to high-temperature annealing, the single-layered a-Ta2N barrier layers degrade primarily by an amorphous-to-crystalline transition of the barrier layers. Crystallization of the single-layered stoichiometric a-Ta2N (Ta67N33) diffusion barriers occurs at temperatures as low as 450 °C. Doing so allows copper to preferentially penetrate through the grain boundaries or thermal-induced microcracks of the crystallized barriers and react with silicon, sequentially forming {111}-facetted pyramidal Cu3Si precipitates and TaSi2 Overdoping nitrogen into the amorphous matrix can dramatically increase the crystallization temperature to 600 °C. This temperature increase slows down the inward diffusion of copper and delays the formation of both silicides. The nitrogen overdoped Ta2N (Ta64N36) diffusion barriers can thus be significantly enhanced so as to yield a failure temperature 100 �

Fabrication of a tantalum-clad tungsten target for LANSCE

NASA Astrophysics Data System (ADS)

Nelson, A. T.; O'Toole, J. A.; Valicenti, R. A.; Maloy, S. A.

2012-12-01

Development of a solid state bonding technique suitable to clad tungsten targets with tantalum was completed to improve operation of the Los Alamos Neutron Science Centers spallation target. Significant deterioration of conventional bare tungsten targets has historically resulted in transfer of tungsten into the cooling system through corrosion resulting in increased radioactivity outside the target and reduction of delivered neutron flux. The fabrication method chosen to join the tantalum cladding to the tungsten was hot isostatic pressing (HIP) given the geometry constraints of a cylindrical assembly and previous success demonstrated at KENS. Nominal HIP parameters of 1500 °C, 200 MPa, and 3 h were selected based upon previous work. Development of the process included significant surface engineering controls and characterization given tantalums propensity for oxide and carbide formation at high temperatures. In addition to rigorous acid cleaning implemented at each step of the fabrication process, a three layer tantalum foil gettering system was devised such that any free oxygen and carbon impurities contained in the argon gas within the HIP vessel was mitigated to the extent possible before coming into contact with the tantalum cladding. The result of the numerous controls and refined techniques was negligible coarsening of the native Ta2O5 surface oxide, no measureable oxygen diffusion into the tantalum bulk, and no detectable carburization despite use of argon containing up to 5 ppm oxygen and up to 40 ppm total CO, CO2, or organic contaminants. Post bond characterization of the interface revealed continuous bonding with a few microns of species interdiffusion.

Semimicrodetermination of combined tantalum and niobium with selenous acid

USGS Publications Warehouse

Grimaldi, F.S.; Schnepfe, M.

1959-01-01

Tantalum and niobium are separated and determined gravimetrically by precipitation with selenous acid from highly acidic solutions in the absence of complexing agents. Hydrogen peroxide is used in the preparation of the solution and later catalytically destroyed during digestion of the precipitate. From 0.2 to 30 mg., separately or in mixtures, of niobium or tantalum pentoxide can be separated from mixtures containing 100 mg. each of the oxides of scandium, yttrium, cerium, vanadium, molybdenum, iron, aluminum, tin, lead, and bismuth with a single precipitation; and from 30 mg. of titanium dioxide, and 50 mg. each of the oxides of antimony and thorium, when present separately, with three precipitations. At least 50 mg. of uranium(VI) oxide can be separated with a single precipitation when present alone; otherwise, three precipitations may be needed. Zirconium does not interfere when the tantalum and niobium contents of the sample are small, but in general, zirconium as well as tungsten interfere. The method is applied to the determination of the earth acids in tantaloniobate ores.

Oxidation state and interfacial effects on oxygen vacancies in tantalum pentoxide

DOE PAGES

Bondi, Robert J.; Marinella, Matthew J.

2015-02-28

First-principles density-functional theory (DFT) calculations are used to study the atomistic structure, structural energetics, and electron density near the O monovacancy (V O n; n=0,1+,2+) in both bulk, amorphous tantalum pentoxide (a-Ta 2O 5) and also at vacuum and metallic Ta interfaces. We calculate multivariate vacancy formation energies to evaluate stability as a function of oxidation state, distance from interface plane, and Fermi energy. V O n of all oxidation states preferentially segregate at both Ta and vacuum interfaces, where the metallic interface exhibits global formation energy minima. In a-Ta 2O 5, V O 0 are characterized by structural contractionmore » and electron density localization, while V O 2+ promote structural expansion and are depleted of electron density. In contrast, interfacial V O 0 and V O 2+ show nearly indistinguishable ionic and electronic signatures indicative of a reduced V O center. Interfacial V O 2+ extract electron density from metallic Ta indicating V O 2+ is spontaneously reduced at the expense of the metal. This oxidation/reduction behavior suggests careful selection and processing of both oxide layer and metal electrodes for engineering memristor device operation.« less

Compaction and High-Pressure Response of Granular Tantalum Oxide

NASA Astrophysics Data System (ADS)

Vogler, Tracy; Root, Seth; Knudson, Marcus; Thornhill, Tom; Reinhart, William

2015-06-01

The dynamic behavior of nearly fully-dense and porous tantalum oxide (Ta2O5) is studied. Two particle morphologies are used to obtain two distinct initial tap densities, which correspond to approximately 40% and 15% of crystalline density. The response is characterized from low pressures, which result in incomplete compaction, to very high pressures where the thermal component of the EOS dominates. Issues related to a possible phase transformation along the Hugoniot and to establishing reasonable error bars on the experimental data will be discussed. The suitability of continuum and mesoscale models to capture the experimental results will be examined. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

Diffusion-Cooled Tantalum Hot-Electron Bolometer Mixers

NASA Technical Reports Server (NTRS)

Skalare, Anders; McGrath, William; Bumble, Bruce; LeDuc, Henry

2004-01-01

A batch of experimental diffusion-cooled hot-electron bolometers (HEBs), suitable for use as mixers having input frequencies in the terahertz range and output frequencies up to about a gigahertz, exploit the superconducting/normal-conducting transition in a thin strip of tantalum. The design and operation of these HEB mixers are based on mostly the same principles as those of a prior HEB mixer that exploited the superconducting/normal- conducting transition in a thin strip of niobium and that was described elsewhere.

Enhancement of as-sputtered silver-tantalum oxide thin film coating on biomaterial stainless steel by surface thermal treatment

NASA Astrophysics Data System (ADS)

Alias, Rodianah; Mahmoodian, Reza; Shukor, Mohd Hamdi Abd; Yew, Been Seok; Muhamad, Martini

2018-04-01

Stainless steel 316L (SS316L) is extensively used as surgical/clinical tools due to its low carbon content and excellent mechanical characteristic. The fabrication of metal ceramic based on this metallic biomaterial favor its biofunctionality properties. However, instability phase of amorphous thin film lead to degradation, corrosion and oxidation. Thus, thin film coating requires elevated adhesion strength and higher surface hardness to meet clinical tools criteria. In this study, the SS316L was deposited with micron thickness of Ag-TaO thin film by using magnetron sputtering. The microstructure, elemental analysis and phase identification of Ag-TaO thin film were characterized by using FESEM, EDX and XRD, respectively; whereas the micro scratch test and micro hardness test were performed by using Micro Scratch Testing System and Vickers Micro Hardness Tester, respectively. It was found that the coating thin film's adhesion and hardness strength were improved from 672 to 2749 mN and 142 to 158 Hv respectively. It was found that the as-deposited surface were treated at 500 °C of temperatures with 2 °C/min ramping rate enhance 4.1 times of the adhesion strength value. Furthermore, FESEM characterization revealed coarsening structure of the thin film coating which can provide high durability service.

Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2011-01-01

The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of

Tantalum modified ferritic iron base alloys

NASA Technical Reports Server (NTRS)

Oldrieve, R. E.; Blankenship, C. P. (Inventor)

1977-01-01

Strong ferritic alloys of the Fe-CR-Al type containing 0.4% to 2% tantalum were developed. These alloys have improved fabricability without sacrificing high temperature strength and oxidation resistance in the 800 C (1475 F) to 1040 C (1900 F) range.

Scintillation Breakdowns in Chip Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2008-01-01

Scintillations in solid tantalum capacitors are momentarily local breakdowns terminated by a self-healing or conversion to a high-resistive state of the manganese oxide cathode. This conversion effectively caps the defective area of the tantalum pentoxide dielectric and prevents short-circuit failures. Typically, this type of breakdown has no immediate catastrophic consequences and is often considered as nuisance rather than a failure. Scintillation breakdowns likely do not affect failures of parts under surge current conditions, and so-called "proofing" of tantalum chip capacitors, which is a controllable exposure of the part after soldering to voltages slightly higher than the operating voltage to verify that possible scintillations are self-healed, has been shown to improve the quality of the parts. However, no in-depth studies of the effect of scintillations on reliability of tantalum capacitors have been performed so far. KEMET is using scintillation breakdown testing as a tool for assessing process improvements and to compare quality of different manufacturing lots. Nevertheless, the relationship between failures and scintillation breakdowns is not clear, and this test is not considered as suitable for lot acceptance testing. In this work, scintillation breakdowns in different military-graded and commercial tantalum capacitors were characterized and related to the rated voltages and to life test failures. A model for assessment of times to failure, based on distributions of breakdown voltages, and accelerating factors of life testing are discussed.

Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

PubMed Central

Kim, Wonjoo; Chattopadhyay, Anupam; Siemon, Anne; Linn, Eike; Waser, Rainer; Rana, Vikas

2016-01-01

Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced. PMID:27834352

Activation energy of tantalum-tungsten oxide thermite reactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cervantes, Octavio G.; Munir, Zuhair A.; Chemical Engineering and Materials Science, University of California, Davis, CA

2011-01-15

The activation energy of a sol-gel (SG) derived tantalum-tungsten oxide thermite composite was determined using the Kissinger isoconversion method. The SG derived powder was consolidated using the high-pressure spark plasma sintering (HPSPS) technique at 300 and 400 C. The ignition temperatures were investigated under high heating rates (500-2000 C min{sup -1}). Such heating rates were required in order to ignite the thermite composite. Samples consolidated at 300 C exhibit an abrupt change in temperature response prior to the main ignition temperature. This change in temperature response is attributed to the crystallization of the amorphous WO{sub 3} in the SG derivedmore » Ta-WO{sub 3} thermite composite and not to a pre-ignition reaction between the constituents. Ignition temperatures for the Ta-WO{sub 3} thermite ranged from approximately 465 to 670 C. The activation energies of the SG derived Ta-WO{sub 3} thermite composite consolidated at 300 and 400 C were determined to be 38{+-} 2 kJ mol{sup -1} and 57 {+-} 2 kJ mol{sup -1}, respectively. (author)« less

Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic.

PubMed

Kim, Wonjoo; Chattopadhyay, Anupam; Siemon, Anne; Linn, Eike; Waser, Rainer; Rana, Vikas

2016-11-11

Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced.

Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

NASA Astrophysics Data System (ADS)

Kim, Wonjoo; Chattopadhyay, Anupam; Siemon, Anne; Linn, Eike; Waser, Rainer; Rana, Vikas

2016-11-01

Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced.

Reduced-graphene-oxide supported tantalum-based electrocatalysts: Controlled nitrogen doping and oxygen reduction reaction

NASA Astrophysics Data System (ADS)

Yang, Xiaoyun; Mo, Qijie; Guo, Yulin; Chen, Nana; Gao, Qingsheng

2018-03-01

Controlled N-doping is feasible to engineer the surface stoichiometry and the electronic configuration of metal-oxide electrocatalysts toward efficient oxygen reduction reactions (ORR). Taking reduced graphene oxide supported tantalum-oxides (TaOx/RGO) for example, this work illustrated the controlled N-doping in both metal-oxides and carbon supports, and the contribution to the improved ORR activity. The active N-doped TaOx/RGO electrocatalysts were fabricated via SiO2-assisted pyrolysis, in which the amount and kind of N-doping were tailored toward efficient electrocatalysis. The optimal nanocomposites showed a quite positive half-wave potential (0.80 V vs. RHE), the excellent long-term stability, and the outstanding tolerance to methanol crossing. The improvement in ORR was reasonably attributed to the synergy between N-doped TaOx and N-doped RGO. Elucidating the importance of controlled N-doping for electrocatalysis, this work will open up new opportunities to explore noble-metal-free materials for renewable energy applications.

Tungsten-reinforced tantalum

NASA Technical Reports Server (NTRS)

Bacigalupi, R. J.; Breitwieser, R.

1972-01-01

Method is described for producing tungsten-reinforced tantalum, a material possessing the high temperature strength of tungsten and room temperature ductility and weldability of tantalum. This material is produced by bonding together and overlaying structure of tungsten wires with chemical vapor deposited tantalum.

A niobium and tantalum co-doped perovskite cathode for solid oxide fuel cells operating below 500 °C

PubMed Central

Li, Mengran; Zhao, Mingwen; Li, Feng; Zhou, Wei; Peterson, Vanessa K.; Xu, Xiaoyong; Shao, Zongping; Gentle, Ian; Zhu, Zhonghua

2017-01-01

The slow activity of cathode materials is one of the most significant barriers to realizing the operation of solid oxide fuel cells below 500 °C. Here we report a niobium and tantalum co-substituted perovskite SrCo0.8Nb0.1Ta0.1O3−δ as a cathode, which exhibits high electroactivity. This cathode has an area-specific polarization resistance as low as ∼0.16 and ∼0.68 Ω cm2 in a symmetrical cell and peak power densities of 1.2 and 0.7 W cm−2 in a Gd0.1Ce0.9O1.95-based anode-supported fuel cell at 500 and 450 °C, respectively. The high performance is attributed to an optimal balance of oxygen vacancies, ionic mobility and surface electron transfer as promoted by the synergistic effects of the niobium and tantalum. This work also points to an effective strategy in the design of cathodes for low-temperature solid oxide fuel cells. PMID:28045088

Copper-tantalum alloy

DOEpatents

Schmidt, Frederick A.; Verhoeven, John D.; Gibson, Edwin D.

1986-07-15

A tantalum-copper alloy can be made by preparing a consumable electrode consisting of an elongated copper billet containing at least two spaced apart tantalum rods extending longitudinally the length of the billet. The electrode is placed in a dc arc furnace and melted under conditions which co-melt the copper and tantalum to form the alloy.

Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hwang, Ah Young; Ji, Hyuk; Kim, Sang Tae

2016-04-11

Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 °C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm{sup 2}/V s, subthreshold swing (SS) of 0.39 V/decade, threshold voltage (V{sub TH}) of 1.5 V, and I{sub ON/OFF} ratio of ∼10{sup 7}. A significant improvement in the field-effect mobility (up to ∼33.5 cm{sup 2}/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, V{sub TH}, or I{sub ON/OFF} ratio due to the presence of a highly ordered microstructure.

Performance and Reliability of Electrowetting-on-Dielectric (EWOD) Systems Based on Tantalum Oxide.

PubMed

Mibus, Marcel; Zangari, Giovanni

2017-12-06

The electrowetting-on-dielectric behavior of Cytop/Tantalum oxide (TaOx) bilayers is studied by measuring their response vs applied voltage and under prolonged periodic cycling, below and above the threshold voltage V T corresponding to the breakdown field for the oxide. TaOx exhibits symmetric solid state I-V characteristics, with electronic conduction dominated by Schottky, Poole-Frenkel emission; conduction is attributed to oxygen vacancies (6 × 10 16 cm -3 ), resulting in large currents at low bias. Electrolyte/Metal Oxide/Metal I-V characteristics show oxide degradation at (<5 V) cathodic bias; anodic bias in contrast results in stable characteristics until reaching the anodization voltage, where the oxide thickens, leading eventually to breakdown and oxygen production at the electrode. Electrowetting angle vs applied voltage undergoes three different stages: a parabolic variation of contact angle (CA) with applied voltage, CA saturation, and rebound of the CA to higher values due to degradation of the polymer layer. The contact angle remained stable for several hundred cycles if the applied voltage was less than V T ; degradation in contrast is fast when the voltage is above V T . Degradation of the electrowetting response with time is linked to charge accumulation in the polymer, which inhibits the rebound of the CA when voltage is being applied.

Nanoporous titanium niobium oxide and titanium tantalum oxide compositions and their use in anodes of lithium ion batteries

DOEpatents

Dai, Sheng; Guo, Bingkun; Sun, Xiao-Guang; Qiao, Zhenan

2017-10-31

Nanoporous metal oxide framework compositions useful as anodic materials in a lithium ion battery, the composition comprising metal oxide nanocrystals interconnected in a nanoporous framework and having interconnected channels, wherein the metal in said metal oxide comprises titanium and at least one metal selected from niobium and tantalum, e.g., TiNb.sub.2-x Ta.sub.xO.sub.y (wherein x is a value from 0 to 2, and y is a value from 7 to 10) and Ti.sub.2Nb.sub.10-vTa.sub.vO.sub.w (wherein v is a value from 0 to 2, and w is a value from 27 to 29). A novel sol gel method is also described in which sol gel reactive precursors are combined with a templating agent under sol gel reaction conditions to produce a hybrid precursor, and the precursor calcined to form the anodic composition. The invention is also directed to lithium ion batteries in which the nanoporous framework material is incorporated in an anode of the battery.

All-alkoxide synthesis of strontium-containing metal oxides

DOEpatents

Boyle, Timothy J.

2001-01-01

A method for making strontium-containing metal-oxide ceramic thin films from a precursor liquid by mixing a strontium neo-pentoxide dissolved in an amine solvent and at least one metal alkoxide dissolved in a solvent, said at least one metal alkoxide selected from the group consisting of alkoxides of calcium, barium, bismuth, cadmium, lead, titanium, tantalum, hafnium, tungsten, niobium, zirconium, yttrium, lanthanum, antimony, chromium and thallium, depositing a thin film of the precursor liquid on a substrate, and heating the thin film in the presence of oxygen at between 550 and 700.degree. C.

All-tantalum electrolytic capacitor

NASA Technical Reports Server (NTRS)

Green, G. E., Jr.

1977-01-01

Device uses single-compression tantalum-to-tantalum seal. Single-compression seal allows better utilization of volume within device. As result of all-tantalum case and lengthened cathode, electrical parameters, particularly equivalent series resistance and capacitance stability, improved over silver-cased capacitor.

A proposed CT contrast agent using carboxybetaine zwitterionic tantalum oxide nanoparticles: Imaging, biological, and physicochemical performance

PubMed Central

FitzGerald, Paul F.; Butts, Matthew D.; Roberts, Jeannette C.; Colborn, Robert E.; Torres, Andrew S.; Lee, Brian D.; Yeh, Benjamin M.; Bonitatibus, Peter J.

2016-01-01

Objectives To produce and evaluate a proposed computed tomography (CT) contrast agent based on carboxybetaine zwitterionic (CZ) coated soluble tantalum oxide nanoparticles (CZ-TaO NPs). We chose tantalum to provide superior imaging performance compared to current iodine-based clinical CT contrast agents. We developed the CZ coating to provide biological and physical performance similar to that of current iodinated contrast agents. The aim of this study was to evaluate the imaging, biological, and physicochemical performance of this proposed contrast agent compared to clinically-used iodinated agents. Materials and Methods We evaluated CT imaging performance of our CZ-TaO NPs compared to an iodinated agent in live rats, imaged centrally-located within a tissue-equivalent plastic phantom that simulated a large patient. To evaluate vascular contrast enhancement, we scanned the rats’ great vessels at high temporal resolution during and following contrast agent injection. We performed several in vivo CZ-TaO NP studies in healthy rats to evaluate tolerability. These studies included injecting the agent at the anticipated clinical dose (ACD) and at 3 times and 6 times the ACD, followed by longitudinal hematology to assess impact to blood cells and organ function (from 4 hours to 1 week). Kidney histological analysis was performed 48 hours after injection at 3 times the ACD. We measured the elimination half-life of CZ-TaO NPs from blood, and we monitored acute kidney injury biomarkers with a kidney injury assay using urine collected from 4 hours to 1 week. We measured tantalum retention in individual organs and in the whole carcass 48 hours after injection at ACD. CZ-TaO NPs were synthesized and analyzed in detail. We used multi-dimensional nuclear magnetic resonance (NMR) to determine surface functionality of the nanoparticles. We measured nanoparticle size and solution properties (osmolality and viscosity) of the agent over a range of tantalum concentrations, including

Crystalline phase-stability of tantalum pentoxide

NASA Astrophysics Data System (ADS)

Walton, Santiago; Padilha, Antonio; Dalpian, Gustavo; Guillén, Jorge; Dalpian's Research Group Collaboration; Grupo de Estado Solido Collaboration; Gritad Collaboration

2013-03-01

Memristive devices are attractive candidates to provide a paradigm change in memory devices fabrication. These new devices would be faster, denser and less power consuming than those available today. However, the mechanism of memristance is not yet well understood. It is believed that a voltage/current-driven phase transition occurs in the material, which leads to significant changes in the device's conductivity. In the particular case of tantalum-oxide-based devices the relevant crystalline phases are still a matter of debate. Some of these phases are not even completely known and there is no agreement about which model best explains the crystallographic results. In this work we have performed ab-initio DFT based calculations to study the structural properties of different phases (and models) of Ta2O5 - the structure which is believed to exist inside Tantalum Oxide based devices. The equations of state for this material were constructed through first principles total energy calculations and we have also calculated the phonon frequencies at Γ. These results show that the most stable phase of this oxide (B-Ta2O5) is in fact composed of octahedral, instead of pentagonal (as L-Ta2O5) or hexagonal (as δ-Ta2O5) bipyramids. Fapesp, CNPq, Capes,CODI-UdeA

Electrodeposition of Tantalum and Tantalum-Chromium Alloys

DTIC Science & Technology

1980-05-01

Electrochem Soc, 112, 840 (1965). 7Ibid, 113,60 (1966). 8Ibid, 113.66 (1966). J. Wurm, "European Conference on the Development of Molten Salts Applica...Chem. 35, 161-3 (1887). 16. J. Wurm, "European Conference on the Development of Molten Salts Applica- tions," Extended Abstracts and Proceedings, pp...Metals Tantalum Tantalum-Chromium Alloys Chromium Coating Fused Salt Electrolyte Electrodeposition FLINAK 20. ABSTRACT (Continue on reverse

Deposition and dielectric characterization of strontium and tantalum-based oxide and oxynitride perovskite thin films

NASA Astrophysics Data System (ADS)

Jacq, S.; Le Paven, C.; Le Gendre, L.; Benzerga, R.; Cheviré, F.; Tessier, F.; Sharaiha, A.

2016-04-01

We have synthesized the composition x = 0.01 of the (Sr1-xLax)2(Ta1-xTix)2O7 solid solution, mixing the ferroelectric perovskite phases Sr2Ta2O7 and La2Ti2O7. Related oxide and oxynitride materials have been produced as thin films by magnetron radio frequency sputtering. Reactive sputter deposition was conducted at 750 °C under a 75 vol.% (Ar) + 25 vol.% (N2,O2) mixture. An oxygen-free plasma leads to the deposition of an oxynitride film (Sr0.99La0.01) (Ta0.99Ti0.01)O2N, characterized by a band gap Eg = 2.30 eV and a preferential (001) epitaxial growth on (001) SrTiO3 substrate. Its dielectric constant and loss tangent are respectively Epsilon' = 60 (at 1 kHz) and tanDelta = 62.5 × 10-3. In oxygen-rich conditions (vol.%N2 ≤ 15%), (110) epitaxial (Sr0.99La0.01)2(Ta0.99Ti0.01)2O7 oxides films are deposited, associated to a larger band gap value (Eg = 4.55 eV). The oxide films permittivity varies from 45 to 25 (at 1 kHz) in correlation with the decrease in crystalline orientation; measured losses are lower than 5.10-3. For 20 ≤ vol.% N2 ≤ 24.55, the films are poorly crystallized, leading to very low permittivities (minimum Epsilon' = 3). A correlation between the dielectric losses and the presence of an oxynitride phase in the samples is highlighted.

Corrosion resistance of porous binary tantalum and titanium carbides of various composition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Artyunina, N.P.; Komratov, G.N.; Bolonova, E.A.

1993-12-20

Resistance of porous binary tantalum and titanium carbides in solutions of mineral acids and their mixtures, of several organic acids, and of ammonium and potassium hydroxide was studied. It has been shown that as the content of tantalum in a material increases its resistance in solutions of oxidizing acids is improved, but it is reduced in solutions of sulfuric and hydrofluoric acids and also in solutions of potassium hydroxide.

Perovskite phase thin films and method of making

DOEpatents

Boyle, Timothy J.; Rodriguez, Mark A.

2000-01-01

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Suhas; Department of Electrical Engineering, Stanford University, Stanford, California 94305; Graves, Catherine E.

2015-07-21

Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive material that has shown promise for high-performance nonvolatile computer memory. The microphysics has been elusive because of the small scale and subtle physical changes that accompany conductance switching. In this study, we probed the atomic composition, local chemistry, and electronic structure of functioning tantalum oxide memristors through spatially mapped O K-edge x-ray absorption. We developed a time-multiplexed spectromicroscopy technique to enhance the weak and possibly localized oxide modifications with spatial and spectral resolutions of <30 nm and 70 meV, respectively.more » During the initial stages of conductance switching of a micrometer sized crosspoint device, the spectral changes were uniform within the spatial resolution of our technique. When the device was further driven with millions of high voltage-pulse cycles, we observed lateral motion and separation of ∼100 nm-scale agglomerates of both oxygen interstitials and vacancies. We also demonstrate a unique capability of this technique by identifying the relaxation behavior in the material during electrical stimuli by identifying electric field driven changes with varying pulse widths. In addition, we show that changes to the material can be localized to a spatial region by modifying its topography or uniformity, as against spatially uniform changes observed here during memristive switching. The goal of this report is to introduce the capability of time-multiplexed x-ray spectromicroscopy in studying weak-signal transitions in inhomogeneous media through the example of the operation and temporal evolution of a memristor.« less

Atomic-scale visualization of oxide thin-film surfaces.

PubMed

Iwaya, Katsuya; Ohsawa, Takeo; Shimizu, Ryota; Okada, Yoshinori; Hitosugi, Taro

2018-01-01

The interfaces of complex oxide heterostructures exhibit intriguing phenomena not observed in their constituent materials. The oxide thin-film growth of such heterostructures has been successfully controlled with unit-cell precision; however, atomic-scale understandings of oxide thin-film surfaces and interfaces have remained insufficient. We examined, with atomic precision, the surface and electronic structures of oxide thin films and their growth processes using low-temperature scanning tunneling microscopy. Our results reveal that oxide thin-film surface structures are complicated in contrast to the general perception and that atomically ordered surfaces can be achieved with careful attention to the surface preparation. Such atomically ordered oxide thin-film surfaces offer great opportunities not only for investigating the microscopic origins of interfacial phenomena but also for exploring new surface phenomena and for studying the electronic states of complex oxides that are inaccessible using bulk samples.

World War II, tantalum, and the evolution of modern cranioplasty technique.

PubMed

Flanigan, Patrick; Kshettry, Varun R; Benzel, Edward C

2014-04-01

Cranioplasty is a unique procedure with a rich history. Since ancient times, a diverse array of materials from coconut shells to gold plates has been used for the repair of cranial defects. More recently, World War II greatly increased the demand for cranioplasty procedures and renewed interest in the search for a suitable synthetic material for cranioprostheses. Experimental evidence revealed that tantalum was biologically inert to acid and oxidative stresses. In fact, the observation that tantalum did not absorb acid resulted in the metal being named after Tantalus, the Greek mythological figure who was condemned to a pool of water in the Underworld that would recede when he tried to take a drink. In clinical use, malleability facilitated a single-stage cosmetic repair of cranial defects. Tantalum became the preferred cranioplasty material for more than 1000 procedures performed during World War II. In fact, its use was rapidly adopted in the civilian population. During World War II and the heyday of tantalum cranioplasty, there was a rapid evolution in prosthesis implantation and fixation techniques significantly shaping how cranioplasties are performed today. Several years after the war, acrylic emerged as the cranioplasty material of choice. It had several clear advantages over its metallic counterparts. Titanium, which was less radiopaque and had a more optimal thermal conductivity profile (less thermally conductive), eventually supplanted tantalum as the most common metallic cranioplasty material. While tantalum cranioplasty was popular for only a decade, it represented a significant breakthrough in synthetic cranioplasty. The experiences of wartime neurosurgeons with tantalum cranioplasty played a pivotal role in the evolution of modern cranioplasty techniques and ultimately led to a heightened understanding of the necessary attributes of an ideal synthetic cranioplasty material. Indeed, the history of tantalum cranioplasty serves as a model for innovative

Activation Energy of Tantalum-Tungsten Oxide Thermite Reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cervantes, O; Kuntz, J; Gash, A

2010-02-25

The activation energy of a high melting temperature sol-gel (SG) derived tantalum-tungsten oxide thermite composite was determined using the Kissinger isoconversion method. The SG derived powder was consolidated using the High Pressure Spark Plasma Sintering (HPSPS) technique to 300 and 400 C to produce pellets with dimensions of 5 mm diameter by 1.5 mm height. A custom built ignition setup was developed to measure ignition temperatures at high heating rates (500-2000 C {center_dot} min{sup -1}). Such heating rates were required in order to ignite the thermite composite. Unlike the 400 C samples, results show that the samples consolidated to 300more » C undergo an abrupt change in temperature response prior to ignition. This change in temperature response has been attributed to the crystallization of the amorphous WO{sub 3} in the SG derived Ta-WO{sub 3} thermite composite and not to a pre-ignition reaction between the constituents. Ignition temperatures for the Ta-WO{sub 3} thermite ranged from approximately 465-670 C. The activation energy of the SG derived Ta-WO{sup 3} thermite composite consolidated to 300 and 400 C were determined to be 37.787 {+-} 1.58 kJ {center_dot} mol{sup -1} and 57.381 {+-} 2.26 kJ {center_dot} mol{sup -1}, respectively.« less

Tantalum recycling in the United States in 1998

USGS Publications Warehouse

Cunningham, Larry D.

2001-01-01

This report describes the flow of tantalum in the United States in 1998 with emphasis on the extent to which tantalum was recycled/reused. Tantalum was mostly recycled from new scrap that was generated during the manufacture of tantalum-related electronic components and new and old scrap products of tantalum-containing cemented carbides and superalloys. In 1998, about 210 metric tons of tantalum was recycled/reused, with about 43% derived from old scrap. The tantalum recycling rate was calculated to be 21%, and tantalum scrap recycling efficiency, 35%.

Oxide-based thin film transistors for flexible electronics

NASA Astrophysics Data System (ADS)

He, Yongli; Wang, Xiangyu; Gao, Ya; Hou, Yahui; Wan, Qing

2018-01-01

The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends. Project supported in part by the National Science Foundation for Distinguished Young Scholars of China (No. 61425020), in part by the National Natural Science Foundation of China (No. 11674162).

Electrochemical Impedance and Polarization Corrosion Studies of Tantalum Surface Modified by DC Plasma Electrolytic Oxidation

PubMed Central

Sowa, Maciej

2018-01-01

Tantalum has recently become an actively researched biomaterial for the bone reconstruction applications because of its excellent corrosion resistance and successful clinical records. However, a bare Ta surface is not capable of directly bonding to the bone upon implantation and requires some method of bioactivation. In this study, this was realized by direct current (DC) plasma electrolytic oxidation (PEO). Susceptibility to corrosion is a major factor determining the service-life of an implant. Therefore, herein, the corrosion resistance of the PEO coatings on Ta was investigated in Ringer’s solution. The coatings were formed by galvanostatic anodization up to 200, 300 and 400 V, after which the treatment was conducted potentiostatically until the total process time amounted to 5 min. Three solutions containing Ca(H2PO2)2, Ca(HCOO)2 and Mg(CH3COO)2 were used in the treatment. For the corrosion characterization, electrochemical impedance spectroscopy and potentiodynamic polarization techniques were chosen. The coatings showed the best corrosion resistance at voltages low enough so that the intensive sparking was absent, which resulted in the formation of thin films. The impedance data were fitted to the equivalent electrical circuits with two time constants, namely R(Q[R(QR)]) and R(Q[R(Q[RW])]). The inclusion of W in the circuit helped to fit the low-frequency part of the samples PEO-ed at 400 V, hinting at the important role of diffusion in the corrosion resistance of the PEO coatings described in the research. PMID:29614014

Semimicrodetermination of tantalum with selenous acid

USGS Publications Warehouse

Grimaldi, F.S.; Schnepfe, M.M.

1958-01-01

Tantalum is separated and determined gravimetrically by precipitation with selenous acid from a highly acidic solution containing oxalic and tartaric acids. The method is selective for the determination of up to 30 mg. of tantalum pentoxide, and tolerates relatively large amounts of scandium, yttrium, cerium, titanium, zirconium, thorium, vanadium, niobium, molybdenum, tungsten, uranium, iron, aluminum, gallium, tin, lead, antimony, and bismuth. The separation of tantalum from niobium and titanium is not strictly quantitative, and correction is made colorimetrically for the small amounts of niobium and titanium co-precipitating with the tantalum. The method was applied to the determination of tantalum in tantaloniobate ores.

Method of making tantalum capacitors

DOEpatents

McMillan, April D.; Clausing, Robert E.; Vierow, William F.

1998-01-01

A method for manufacturing tantalum capacitors includes preparing a tantalum compact by cold pressing tantalum powder, placing the compact, along with loose refractory metal powder, in a microwave-transparent casket to form an assembly, and heating the assembly for a time sufficient to effect at least partial sintering of the compact and the product made by the method.

Transport Physics Mechanisms in Thin-Film Oxides.

NASA Astrophysics Data System (ADS)

Tierney, Brian D.; Hjalmarson, Harold P.; Jacobs-Gedrim, Robin B.; James, Conrad D.; Marinella, Matthew M.

A physics-based model of electron transport mechanisms in metal-insulating oxide-metal (M-I-M) systems is presented focusing on transport through the metal-oxide interfaces and in the bulk of the oxide. Interface tunneling, such as electron tunneling between the metal and the conduction band, or to oxide defect states, is accounted for via a WKB model. The effects of thermionic emission are also included. In the bulk of the oxide, defect-site hopping is dominant. Corresponding continuum calculations are performed for Ta2O5 M-I-M systems utilizing two different metal electrodes, e.g., platinum and tantalum. Such an asymmetrical M-I-M structure, applicable to resistive memory applications or oxide-based capacitors, reveals that the current can be either bulk or interface limited depending on the bias polarity and concentration of oxygen vacancy defects. Also, the dominance of some transport mechanisms over others is shown to be due to a complex interdependence between the vacancy concentration and bias polarity. Sandia National Laboratories is a multi-mission laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Modeling Thin Film Oxide Growth

NASA Astrophysics Data System (ADS)

Sherman, Quentin

Thin film oxidation is investigated using two modeling techniques in the interest of better understanding the roles of space charge and non-equilibrium effects. An electrochemical phase-field model of an oxide-metal interface is formulated in one dimension and studied at equilibrium and during growth. An analogous sharp interface model is developed to validate the phase-field model in the thick film limit. Electrochemical profiles across the oxide are shown to deviate from the sharp interface prediction when the oxide film is thin compared to the Debye length, however no effect on the oxidation kinetics is found. This is attributed to the simple thermodynamic and kinetic models used therein. The phase-field model provides a framework onto to which additional physics can be added to better model thin film oxidation. A model for solute trapping during the oxidation of binary alloys is developed to study non-equilibrium effects during the early stages of oxide growth. The model is applied to NiCr alloys, and steady-state interfacial composition maps are presented for the growth of an oxide with the rock salt structure. No detailed experimental data is available to verify the predictions of the solute trapping model, however it is shown to be consistent with the trends observed during the early stages of NiCr oxidation. Lastly, experimental studies of the wet infiltration technique for decorating solid oxide fuel cell anodes with nickel nanoparticles are presented. The effect of nickel nitrate calcination parameters on the resulting nickel oxide microstructures are studied on both porous and planar substrates. Decreasing the calcination temperature and dwell time, as well as a dehydration step after nickel nitrate infiltration, are all shown to decrease the initial nickel oxide particle size, but other factors such as geometry and nickel loading per unit area also affected the final nickel particle size and morphology upon reduction.

Upgrading tantalum and niobium oxides content in Bangka tin slag with double leaching

NASA Astrophysics Data System (ADS)

Soedarsono, J. W.; Permana, S.; Hutauruk, J. K.; Adhyputra, R.; Rustandi, A.; Maksum, A.; Widana, K. S.; Trinopiawan, K.; Anggraini, M.

2018-03-01

Tantalum has become one of the 14 types of critical materials where the level of its availability is assumed as the midterm critical metal. Benefits of the element tantalum in the electronics field increased the deficit balance of supply / demand, as more variations of electronic products developed. The tantalum experts calculated the level of availability until 2020. Base on the previous studies, tin slag is a secondary source of tantalum and niobium. This study uses tin slag from Bangka, Indonesia, abbreviated, Bangka Tin Slag (BTS). BTS was roasted, water quenched and sieved, abbreviated BTS-RQS.BTS was roasted, water quenched and sieved, abbreviated BTS-RQS.BTS-RQS was roasted at a temperature 700□C given sample code BTS-R700QS, while roasted at 800°C given sample code BTS-R800QS.A variable leaching experiment on BTS-R700QS was solvent concentration variable and on BTS-R800QS was time variable. The entire residue was characterized by X-Ray Fluorescence (XRF), and the optimum results are on the BTS-R800QS leaching into 5 M NaOH for 20 min followed by 5M HCl for 50 min, with content of Ta2O5 and Nb2O51.56% and 1.11%, respectively. The result of XRF measurement showed was the increasing of TNO content due to the increasing solvent concentration and time of acid leaching. The discussion of thermodynamics this study used was HSC Chemistry 6 as a supporting data.

Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lad, Robert J.

1999-12-14

This project focused on three different aspects of oxide thin film systems: (1) Model metal/oxide and oxide/oxide interface studies were carried out by depositing ultra-thin metal (Al, K, Mg) and oxide (MgO, AlO{sub x}) films on TiO{sub 2}, NiO and {alpha}-Al{sub 2}O{sub 3} single crystal oxide substrates. (2) Electron cyclotron resonance (ECR) oxygen plasma deposition was used to fabricate AlO{sub 3} and ZrO{sub 2} films on sapphire substrates, and film growth mechanisms and structural characteristics were investigated. (3) The friction and wear characteristics of ZrO{sub 2} films on sapphire substrates in unlubricated sliding contact were studied and correlated with filmmore » microstructure. In these studies, thin film and interfacial regions were characterized using diffraction (RHEED, LEED, XRD), electron spectroscopies (XPS, UPS, AES), microscopy (AFM) and tribology instruments (pin-on-disk, friction microprobe, and scratch tester). By precise control of thin film microstructure, an increased understanding of the structural and chemical stability of interface regions and tribological performance of ultra-thin oxide films was achieved in these important ceramic systems.« less

Additively manufactured porous tantalum implants.

PubMed

Wauthle, Ruben; van der Stok, Johan; Amin Yavari, Saber; Van Humbeeck, Jan; Kruth, Jean-Pierre; Zadpoor, Amir Abbas; Weinans, Harrie; Mulier, Michiel; Schrooten, Jan

2015-03-01

The medical device industry's interest in open porous, metallic biomaterials has increased in response to additive manufacturing techniques enabling the production of complex shapes that cannot be produced with conventional techniques. Tantalum is an important metal for medical devices because of its good biocompatibility. In this study selective laser melting technology was used for the first time to manufacture highly porous pure tantalum implants with fully interconnected open pores. The architecture of the porous structure in combination with the material properties of tantalum result in mechanical properties close to those of human bone and allow for bone ingrowth. The bone regeneration performance of the porous tantalum was evaluated in vivo using an orthotopic load-bearing bone defect model in the rat femur. After 12 weeks, substantial bone ingrowth, good quality of the regenerated bone and a strong, functional implant-bone interface connection were observed. Compared to identical porous Ti-6Al-4V structures, laser-melted tantalum shows excellent osteoconductive properties, has a higher normalized fatigue strength and allows for more plastic deformation due to its high ductility. It is therefore concluded that this is a first step towards a new generation of open porous tantalum implants manufactured using selective laser melting. Copyright © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Unidirectional oxide hetero-interface thin-film diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing amore » high feasibility for practical applications.« less

The role of electronegativity on the extent of nitridation of group 5 metals as revealed by reactions of tantalum cluster cations with ammonia molecules.

PubMed

Arakawa, Masashi; Ando, Kota; Fujimoto, Shuhei; Mishra, Saurabh; Patwari, G Naresh; Terasaki, Akira

2018-05-10

Reactions of the free tantalum cation, Ta+, and tantalum cluster cations, Tan+ (n = 2-10), with ammonia are presented. The reaction of the monomer cation, Ta+, with two molecules of NH3 leads to the formation of TaN2H2+ along with release of two H2 molecules. The dehydrogenation occurs until the formal oxidation number of the tantalum atom reaches +5. On the other hand, all the tantalum cluster cations, Tan+, react with two molecules of NH3 and form TanN2+ with the release of three H2 molecules. Further exposure to ammonia showed that TanNmH+ and TanNm+ are produced through successive reactions; a pure nitride and three H2 molecules are formed for every other NH3 molecule. The nitridation occurred until the formal oxidation number of the tantalum atoms reaches +5 as in the case of TaN2H2+ in contrast to other group 5 elements, i.e., vanadium and niobium, which have been reported to produce nitrides with lower oxidation states. The present results on small gas-phase metal-nitride clusters show correlation with their bulk properties: tantalum is known to form bulk nitrides in the oxidation states of either +5 (Ta3N5) or +3 (TaN), whereas vanadium and niobium form nitrides in the oxidation state of +3 (VN and NbN). Along with DFT calculations, these findings reveal that nitridation is driven by the electron-donating ability of group 5 elements, i.e., electronegativity of the metal plays a key role in determining the composition of the metal nitrides.

Thin film hydrous metal oxide catalysts

DOEpatents

Dosch, Robert G.; Stephens, Howard P.

1995-01-01

Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

Growth control of the oxidation state in vanadium oxide thin films

DOE PAGES

Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; ...

2014-12-05

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase puremore » epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.« less

Growth control of the oxidation state in vanadium oxide thin films

NASA Astrophysics Data System (ADS)

Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Egami, Takeshi; Lee, Ho Nyung

2014-12-01

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V2 + 3 O 3 , V + 4 O 2 , and V2 + 5 O 5 . A well pronounced MIT was only observed in VO2 films grown in a very narrow range of oxygen partial pressure P(O2). The films grown either in lower (<10 mTorr) or higher P(O2) (>25 mTorr) result in V2O3 and V2O5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

Micro/Nano Structural Tantalum Coating for Enhanced Osteogenic Differentiation of Human Bone Marrow Stem Cells

PubMed Central

Ding, Ding; Xie, Youtao; Li, Kai; Huang, Liping; Zheng, Xuebin

2018-01-01

Recently, tantalum has been attracting much attention for its anticorrosion resistance and biocompatibility, and it has been widely used in surface modification for implant applications. To improve its osteogenic differentiation of human bone marrow stem cells (hBMSCs), a micro/nano structure has been fabricated on the tantalum coating surface through the combination of anodic oxidation and plasma spraying method. The morphology, composition, and microstructure of the modified coating were comprehensively studied by employing scanning electron microscopy (SEM), X-ray diffraction (XRD) as well as transmission electron microscopy (TEM). The effects of hierarchical structures as well as micro-porous structure of tantalum coating on the behavior for human bone marrow stem cells (hBMSCs) were evaluated and compared at both cellular and molecular levels in vitro. The experimental results show that a hierarchical micro/nano structure with Ta2O5 nanotubes spread onto a micro-scale tantalum coating has been fabricated successfully, which is confirmed to promote cell adhesion and spreading. Besides, the hierarchical micro/nano tantalum coating can provide 1.5~2.1 times improvement in gene expression, compared with the micro-porous tantalum coating. It demonstrates that it can effectively enhance the proliferation and differentiation of hBMSCs in vitro. PMID:29614022

Micro/Nano Structural Tantalum Coating for Enhanced Osteogenic Differentiation of Human Bone Marrow Stem Cells.

PubMed

Ding, Ding; Xie, Youtao; Li, Kai; Huang, Liping; Zheng, Xuebin

2018-04-03

Recently, tantalum has been attracting much attention for its anticorrosion resistance and biocompatibility, and it has been widely used in surface modification for implant applications. To improve its osteogenic differentiation of human bone marrow stem cells (hBMSCs), a micro/nano structure has been fabricated on the tantalum coating surface through the combination of anodic oxidation and plasma spraying method. The morphology, composition, and microstructure of the modified coating were comprehensively studied by employing scanning electron microscopy (SEM), X-ray diffraction (XRD) as well as transmission electron microscopy (TEM). The effects of hierarchical structures as well as micro-porous structure of tantalum coating on the behavior for human bone marrow stem cells (hBMSCs) were evaluated and compared at both cellular and molecular levels in vitro. The experimental results show that a hierarchical micro/nano structure with Ta₂O₅ nanotubes spread onto a micro-scale tantalum coating has been fabricated successfully, which is confirmed to promote cell adhesion and spreading. Besides, the hierarchical micro/nano tantalum coating can provide 1.5~2.1 times improvement in gene expression, compared with the micro-porous tantalum coating. It demonstrates that it can effectively enhance the proliferation and differentiation of hBMSCs in vitro.

Memristive Properties of Thin Film Cuprous Oxide

DTIC Science & Technology

2011-03-01

Equation Chapter 1 Section 1 MEMRISTIVE PROPERTIES OF THIN FILM CUPROUS OXIDE THESIS Brett C...Force Base, Ohio APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED The views expressed in this thesis are those of the...MEMRISTIVE PROPERTIES OF THIN FILM CUPROUS OXIDE THESIS Presented to the Faculty Department of Engineering Physics Graduate School of

Radiopharmaceutical composition containing tantalum-178 and process therefor

DOEpatents

Neirinckx, Rudi D.; Holman, B. Leonard; Davis, Michael A.; Harris, Gale I.

1989-05-16

A physiologically acceptable solution of tantalum-178 having an activity of 0.1 to 200 millicuries per milliliter of tantalum-178 solution is provided. The solution is obtained from tungsten-178 bound to a column of an anion exchange resin which forms tantalum-178 in situ by eluting the column with a hydrochloric acid solution containing hydrogen peroxide to form an acidic solution of tantalum-178. The acidic solution of tantalum-178 then is neutralized.

Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

NASA Astrophysics Data System (ADS)

Cristea, D.; Crisan, A.; Cretu, N.; Borges, J.; Lopes, C.; Cunha, L.; Ion, V.; Dinescu, M.; Barradas, N. P.; Alves, E.; Apreutesei, M.; Munteanu, D.

2015-11-01

The main purpose of this work is to present and to interpret the change of electrical properties of TaxNyOz thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N2 and O2, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, -50 V or -100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance TaxNyOz films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric TaxNyOz films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

Growth control of the oxidation state in vanadium oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Shinbuhm; Meyer, Tricia L.; Lee, Ho Nyung, E-mail: hnlee@ornl.gov

2014-12-01

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase puremore » epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V{sub 2}{sup +3}O{sub 3}, V{sup +4}O{sub 2}, and V{sub 2}{sup +5}O{sub 5}. A well pronounced MIT was only observed in VO{sub 2} films grown in a very narrow range of oxygen partial pressure P(O{sub 2}). The films grown either in lower (<10 mTorr) or higher P(O{sub 2}) (>25 mTorr) result in V{sub 2}O{sub 3} and V{sub 2}O{sub 5} phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO{sub 2} thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.« less

Mineral resource of the month: tantalum

USGS Publications Warehouse

,

2011-01-01

The article offers information on a rare transition metal called tantalum. It says that the blue-gray mineral resource was discovered in 1801 or 1802 and was used for capacitors in 1940. It adds that the tantalite ore and other minerals in the ore should be separated in order to generate concentrates of tantalum. The use of tantalum are also cited.

Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Kim, Sang Tae; Shin, Yeonwoo; Yun, Pil Sang; Bae, Jong Uk; Chung, In Jae; Jeong, Jae Kyeong

2017-09-01

This paper proposes a new defect engineering concept for low-cost In- and Ga-free zinc tin oxide (ZTO) thin-film transistors (TFTs). This concept is comprised of capping ZTO films with tantalum (Ta) and a subsequent modest thermal annealing treatment at 200 °C. The Ta-capped ZTO TFTs exhibited a remarkably high carrier mobility of 70.8 cm2/Vs, low subthreshold gate swing of 0.18 V/decade, threshold voltage of -1.3 V, and excellent ION/OFF ratio of 2 × 108. The improvement (> two-fold) in the carrier mobility compared to the uncapped ZTO TFT can be attributed to the effective reduction of the number of adverse tailing trap states, such as hydroxyl groups or oxygen interstitial defects, which stems from the scavenging effect of the Ta capping layer on the ZTO channel layer. Furthermore, the Ta-capped ZTO TFTs showed excellent positive and negative gate bias stress stabilities. [Figure not available: see fulltext.

Corrosion of oxide dispersion strengthened iron-chromium steels and tantalum in fluoride salt coolant: An in situ compatibility study for fusion and fusion-fission hybrid reactor concepts

NASA Astrophysics Data System (ADS)

El-Dasher, Bassem; Farmer, Joseph; Ferreira, James; de Caro, Magdalena Serrano; Rubenchik, Alexander; Kimura, Akihiko

2011-12-01

Primary candidate classes of materials for future nuclear power plants, whether they be fission, fusion or hybrids, include oxide dispersion strengthened (ODS) ferritic steels which rely on a dispersion of nano-oxide particles in the matrix for both mechanical strength and swelling resistance, or tantalum alloys which have an inherent neutron-induced swelling resistance and high temperature strength. For high temperature operation, eutectic molten lithium containing fluoride salts are attractive because of their breeding capability as well as their relatively high thermal capacity, which allow for a higher average operating temperature that increases power production. In this paper we test the compatibility of Flinak (LiF-NaF-KF) salts on ODS steels, comparing the performance of current generation ODS steels developed at Kyoto University with the commercial alloy MA956. Pure tantalum was also tested for comparative purposes. In situ data was obtained for temperatures ranging from 600 to 900 °C using a custom-built high temperature electrochemical impedance spectroscopy cell. Results for ODS steels show that steel/coolant interfacial resistance increases from 600 to 800 °C due to an aluminum enriched layer forming at the surface, however an increase in temperature to 900 °C causes this layer to break up and aggressive attack to occur. Performance of current generation ODS steels surpassed that of the MA956 ODS steel, with an in situ impedance behavior similar or better than that of pure tantalum.

Synthesis, characterization and oxidation of metallic cobalt (Co) thin film into semiconducting cobalt oxide (Co3O4)thin film using microwave plasma CVD

NASA Astrophysics Data System (ADS)

Rahman Ansari, Akhalakur; Hussain, Shahir; Imran, Mohd; Abdel-wahab, M. Sh; Alshahrie, Ahmed

2018-06-01

The pure cobalt thin film was deposited on the glass substrate by using DC magnetron sputtering and then exposed to microwave assist oxygen plasma generated in microwave plasma CVD. The oxidation process of Co thin film into Co3O4 thin films with different microwave power and temperature were studied. The influences of microwave power, temperature and irradiation time were investigated on the morphology and particle size of oxide thin films. The crystal structure, chemical conformation, morphologies and optical properties of oxidized Co thin films (Co3O4) were studied by using x-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Raman Spectroscopy and UV–vis Spectroscopy. The data of these films showed complete oxidation pure metallic cobalt (Co) into cobalt oxide (Co3O4). The optical properties were studied for calculating the direct band gaps which ranges from 1.35 to 1.8 eV.

Reliability Effects of Surge Current Testing of Solid Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2007-01-01

Solid tantalum capacitors are widely used in space applications to filter low-frequency ripple currents in power supply circuits and stabilize DC voltages in the system. Tantalum capacitors manufactured per military specifications (MIL-PRF-55365) are established reliability components and have less than 0.001% of failures per 1000 hours (the failure rate is less than 10 FIT) for grades D or S, thus positioning these parts among electronic components with the highest reliability characteristics. Still, failures of tantalum capacitors do happen and when it occurs it might have catastrophic consequences for the system. This is due to a short-circuit failure mode, which might be damaging to a power supply, and also to the capability of tantalum capacitors with manganese cathodes to self-ignite when a failure occurs in low-impedance applications. During such a failure, a substantial amount of energy is released by exothermic reaction of the tantalum pellet with oxygen generated by the overheated manganese oxide cathode, resulting not only in destruction of the part, but also in damage of the board and surrounding components. A specific feature of tantalum capacitors, compared to ceramic parts, is a relatively large value of capacitance, which in contemporary low-size chip capacitors reaches dozens and hundreds of microfarads. This might result in so-called surge current or turn-on failures in the parts when the board is first powered up. Such a failure, which is considered as the most prevalent type of failures in tantalum capacitors [I], is due to fast changes of the voltage in the circuit, dV/dt, producing high surge current spikes, I(sub sp) = Cx(dV/dt), when current in the circuit is unrestricted. These spikes can reach hundreds of amperes and cause catastrophic failures in the system. The mechanism of surge current failures has not been understood completely yet, and different hypotheses were discussed in relevant literature. These include a sustained scintillation

Performance comparison: Aluminum electrolytic and solid tantalum capacitor

NASA Technical Reports Server (NTRS)

Hawthornthwaite, B. G.; Piper, J.; Holland, H. W.

1981-01-01

Several key electrical and environmental parameters of latest technology aluminum electrolytic and solid tantalum capacitors were evaluated in terms of price fluctuations of tantalum metal. Performance differences between solid tantalums and aluminum electrolytics are examined.

High strength forgeable tantalum base alloy

NASA Technical Reports Server (NTRS)

Buckman, R. W., Jr.

1975-01-01

Increasing tungsten content of tantalum base alloy to 12-15% level will improve high temperature creep properties of existing tantalum base alloys while retaining their excellent fabrication and welding characteristics.

Pulsed photonic fabrication of nanostructured metal oxide thin films

NASA Astrophysics Data System (ADS)

Bourgeois, Briley B.; Luo, Sijun; Riggs, Brian C.; Adireddy, Shiva; Chrisey, Douglas B.

2017-09-01

Nanostructured metal oxide thin films with a large specific surface area are preferable for practical device applications in energy conversion and storage. Herein, we report instantaneous (milliseconds) photonic synthesis of three-dimensional (3-D) nanostructured metal oxide thin films through the pulsed photoinitiated pyrolysis of organometallic precursor films made by chemical solution deposition. High wall-plug efficiency-pulsed photonic irradiation (xenon flash lamp, pulse width of 1.93 ms, fluence of 7.7 J/cm2 and frequency of 1.2 Hz) is used for scalable photonic processing. The photothermal effect of subsequent pulses rapidly improves the crystalline quality of nanocrystalline metal oxide thin films in minutes. The following paper highlights pulsed photonic fabrication of 3-D nanostructured TiO2, Co3O4, and Fe2O3 thin films, exemplifying a promising new method for the low-cost and high-throughput manufacturing of nanostructured metal oxide thin films for energy applications.

Tantalum-copper alloy and method for making

DOEpatents

Schmidt, Frederick A.; Verhoeven, John D.; Gibson, Edwin D.

1984-11-06

A tantalum-copper alloy can be made by preparing a consumable electrode consisting of an elongated copper billet containing at least two spaced apart tantalum rods extending longitudinally the length of the billet. The electrode is placed in a dc arc furnace and melted under conditions which co-melt the copper and tantalum to form the alloy.

Tantalum-copper alloy and method for making

DOEpatents

Schmidt, F.A.; Verhoeven, J.D.; Gibson, E.D.

1983-06-01

A tantalum-copper alloy can be made by preparing a consumable electrode consisting of an elongated copper billet containing at least two spaced apart tantalum rods extending longitudinally the length of the billet. The electrode is placed in a dc arc furnace and melted under conditions which co-melt the copper and tantalum to form the alloy.

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-06-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

Purification of tantalum by plasma arc melting

DOEpatents

Dunn, Paul S.; Korzekwa, Deniece R.

1999-01-01

Purification of tantalum by plasma arc melting. The level of oxygen and carbon impurities in tantalum was reduced by plasma arc melting the tantalum using a flowing plasma gas generated from a gas mixture of helium and hydrogen. The flowing plasma gases of the present invention were found to be superior to other known flowing plasma gases used for this purpose.

A novel tantalum-based sol-gel packed microextraction syringe for highly specific enrichment of phosphopeptides in MALDI-MS applications.

PubMed

Çelikbıçak, Ömür; Atakay, Mehmet; Güler, Ülkü; Salih, Bekir

2013-08-07

A new tantalum-based sol-gel material was synthesized using a unique sol-gel synthesis pathway by PEG incorporation into the sol-gel structure without performing a calcination step. This improved its chemical and physical properties for the high capacity and selective enrichment of phosphopeptides from protein digests in complex biological media. The specificity of the tantalum-based sol-gel material for phosphopeptides was evaluated and compared with tantalum(V) oxide (Ta2O5) in different phosphopeptide enrichment applications. The tantalum-based sol-gel and tantalum(V) oxide were characterized in detail using FT-IR spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM), and also using a surface area and pore size analyzer. In the characterization studies, the surface morphology, pore volume, crystallinity of the materials and PEG incorporation into the sol-gel structure to produce a more hydrophilic material were successfully demonstrated. The X-ray diffractograms of the two different materials were compared and it was noted that the broad signals of the tantalum-based sol-gel clearly represented the amorphous structure of the sol-gel material, which was more likely to create enough surface area and to provide more accessible tantalum atoms for phosphopeptides to be easily adsorbed when compared with the neat and more crystalline structure of Ta2O5. Therefore, the phosphopeptide enrichment performance of the tantalum-based sol-gels was found to be remarkably higher than the more crystalline Ta2O5 in our studies. Phosphopeptides at femtomole levels could be selectively enriched using the tantalum-based sol-gel and detected with a higher signal-to-noise ratio by matrix-assisted laser desorption/ionization-mass spectrometer (MALDI-MS). Moreover, phosphopeptides in a tryptic digest of non-fat bovine milk as a complex real-world biological sample were retained with higher yield using a tantalum-based sol-gel. Additionally, the sol-gel material

Mineral-deposit model for lithium-cesium-tantalum pegmatites

USGS Publications Warehouse

Bradley, Dwight C.; McCauley, Andrew D.; Stillings, Lisa L.

2017-06-20

derived by fractional crystallization. In cases where a parental granite pluton is not exposed, one is inferred to lie at depth. Lithium-cesium-tantalum LCT pegmatite melts are enriched in fluxing components including H2O, F, P, and B, which depress the solidus temperature, lower the density, and increase rates of ionic diffusion. This, in turn, enables pegmatites to form thin dikes and massive crystals despite having a felsic composition and temperatures that are significantly lower than ordinary granitic melts. Lithium-cesium-tantalum pegmatites crystallized at remarkably low temperatures (about 350–550 °C) in a remarkably short time (days to years).Lithium-cesium-tantalum pegmatites form in orogenic hinterlands as products of plate convergence. Most formed during collisional orogeny (for example, Kings Mountain district, North Carolina). Specific causes of LCT pegmatite-related magmatism could include: ordinary arc processes; over thickening of continental crust during collision or subduction; slab breakoff during or after collision; slab delamination before, during, or after collision; and late collisional extensional collapse and consequent decompression melting. Lithium-cesium-tantalum pegmatite deposits are present in all continents including Antarctica and in rocks spanning 3 billion years of Earth history. The global age distribution of LCT pegmatites is similar to those of common pegmatites, orogenic granites, and detrital zircons. Peak times of LCT pegmatite genesis at about 2640, 1800, 960, 485, and 310 Ma (million years before present) correspond to times of collisional orogeny and supercontinent assembly. Between these pulses were long intervals when few or no LCT pegmatites formed. These minima overlap with supercontinent tenures at ca. 2450–2225, 1625–1000, 875–725, and 250–200 Ma.Exploration and assessment for LCT pegmatites are guided by a number of observations. In frontier areas where exploration has been minimal at best, the key first

Bandgap-Engineered Zinc-Tin-Oxide Thin Films for Ultraviolet Sensors.

PubMed

Cheng, Tien-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn

2018-07-01

Zinc-tin-oxide thin-film transistors were prepared by radio frequency magnetron co-sputtering, while an identical zinc-tin-oxide thin film was deposited simultaneously on a clear glass substrate to facilitate measurements of the optical properties. When we adjusted the deposition power of ZnO and SnO2, the bandgap of the amorphous thin film was dominated by the deposition power of SnO2. Since the thin-film transistor has obvious absorption in the ultraviolet region owing to the wide bandgap, the drain current increases with the generation of electron-hole pairs. As part of these investigations, a zinc-tin-oxide thin-film transistor has been fabricated that appears to be very promising for ultraviolet applications.

Ultraviolet spectrophotometric determination of tantalum with pyrogallol

USGS Publications Warehouse

Dinnin, J.I.

1953-01-01

In a search for a more rapid method for the determination of tantalum in rocks and minerals, an intensive study was made of the tantalum-pyrogallol reaction recommended by Platanov and Krivoshlikov, and a better modified spectrophotometric procedure is given. The improved method consists in measuring the absorbancy of the tantalum-pyrogallol complex at 325 m?? in 4N hydrochloric acid and a fixed concentration (0.0175M) of ammonium oxalate. Beer's law is followed for the concentration range up to 40 ?? per ml. Sensitivity in terms of molar absorbancy index is 4775. Most interferences are additive in character and readily correctable. Separations or major corrections are required in the presence of significant amounts of molybdenum, tungsten, antimony, and uranium. The method has been successfully applied to three ores previously analyzed by gravimetric techniques. The method affords greater speed, sensitivity, and reproducibility in the determination of tantalum in rocks and minerals. A more reliable technique for preparing standard solutions of tantalum has been developed.

In-situ XRD vs ex-situ vacuum annealing of tantalum oxynitride thin films: Assessments on the structural evolution

NASA Astrophysics Data System (ADS)

Cunha, L.; Apreutesei, M.; Moura, C.; Alves, E.; Barradas, N. P.; Cristea, D.

2018-04-01

The purpose of this work is to discuss the main structural characteristics of a group of tantalum oxynitride (TaNxOy) thin films, with different compositions, prepared by magnetron sputtering, and to interpret and compare the structural changes, by X-ray diffraction (XRD), when the samples are vacuum annealed under two different conditions: i) annealing, followed by ex-situ XRD: one sample of each deposition run was annealed at a different temperature, until a maximum of 800 °C, and the XRD patterns were obtained, at room temperature, after each annealing process; ii) annealing with in-situ XRD: the diffraction patterns are obtained, at certain temperatures, during the annealing process, using always the same sample. In-situ XRD annealing could be an interesting process to perform annealing, and analysing the evolution of the structure with the temperature, when compared to the classical process. A higher structural stability was observed in some of the samples, particularly on those with highest oxygen content, but also on the sample with non-metal (O + N) to metal (Ta) ratio around 0.5.

Method of producing solution-derived metal oxide thin films

DOEpatents

Boyle, Timothy J.; Ingersoll, David

2000-01-01

A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

Study of constitution diagram aluminum-tantalum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glazov, V.M.; Mal'tsev, M.V.; Chistyakov, Y.D.

1988-10-20

Alloys of aluminum with tantalum were for the first time obtained by aluminothermic method in 1868 by Moriniak. Later these alloys were studied in the works of Schirmeister (1915) and Brouwer (1938), moreover Brouwer established that tantalum with aluminum forms the chemical compound TaA1, which has tetragonal crystal lattice with parameters a=5.422 angstroms and c=8.536 angstroms (1). However despite the fact that alloys of aluminum with tantalum long ago are obtained already, constitution diagram of this system is not studied until recently. In connection with the application of tantalum as the modifying additive in aluminum alloys an emergency in themore » construction of this diagram, without the knowledge by which it is not possible to give the correct explanation of the mechanism of the very process of the modification of primary grain. For this purpose was undertaken this work. Russian translations.« less

The Chemical Vapor Deposition of Thin Metal Oxide Films

NASA Astrophysics Data System (ADS)

Laurie, Angus Buchanan

1990-01-01

Chemical vapor deposition (CVD) is an important method of preparing thin films of materials. Copper (II) oxide is an important p-type semiconductor and a major component of high T_{rm c} superconducting oxides. By using a volatile copper (II) chelate precursor, copper (II) bishexafluoroacetylacetonate, it has been possible to prepare thin films of copper (II) oxide by low temperature normal pressure metalorganic chemical vapor deposition. In the metalorganic CVD (MOCVD) production of oxide thin films, oxygen gas saturated with water vapor has been used mainly to reduce residual carbon and fluorine content. This research has investigated the influence of water-saturated oxygen on the morphology of thin films of CuO produced by low temperature chemical vapor deposition onto quartz, magnesium oxide and cubic zirconia substrates. ZnO is a useful n-type semiconductor material and is commonly prepared by the MOCVD method using organometallic precursors such as dimethyl or diethylzinc. These compounds are difficult to handle under atmospheric conditions. In this research, thin polycrystalline films of zinc oxide were grown on a variety of substrates by normal pressure CVD using a zinc chelate complex with zinc(II) bishexafluoroacetylacetonate dihydrate (Zn(hfa)_2.2H _2O) as the zinc source. Zn(hfa) _2.2H_2O is not moisture - or air-sensitive and is thus more easily handled. By operating under reduced-pressure conditions (20-500 torr) it is possible to substantially reduce deposition times and improve film quality. This research has investigated the reduced-pressure CVD of thin films of CuO and ZnO. Sub-micron films of tin(IV) oxide (SnO _2) have been grown by normal pressure CVD on quartz substrates by using tetraphenyltin (TPT) as the source of tin. All CVD films were characterized by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).

Niobium and tantalum: indispensable twins

USGS Publications Warehouse

Schulz, Klaus; Papp, John

2014-01-01

Niobium and tantalum are transition metals almost always paired together in nature. These “twins” are difficult to separate because of their shared physical and chemical properties. In 1801, English chemist Charles Hatchett uncovered an unknown element in a mineral sample of columbite; John Winthrop found the sample in a Massachusetts mine and sent it to the British Museum in London in 1734. The name columbium, which Hatchet named the new element, came from the poetic name for North America—Columbia—and was used interchangeably for niobium until 1949, when the name niobium became official. Swedish scientist Anders Ekberg discovered tantalum in 1802, but it was confused with niobium, because of their twinned properties, until 1864, when it was recognized as a separate element. Niobium is a lustrous, gray, ductile metal with a high melting point, relatively low density, and superconductor properties. Tantalum is a dark blue-gray, dense, ductile, very hard, and easily fabricated metal. It is highly conductive to heat and electricity and renowned for its resistance to acidic corrosion. These special properties determine their primary uses and make niobium and tantalum indispensable.

Effect of dielectric stoichiometry and interface chemical state on band alignment between tantalum oxide and platinum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lebedinskii, Yu. Yu.; National Research Nuclear University MEPhI; Chernikova, A. G.

2015-10-05

The tantalum oxide–platinum interface electronic properties determined by X-ray photoelectron spectroscopy are found to depend on the dielectric stoichiometry and platinum chemical state. We demonstrate the slow charging of the tantalum oxide in cases of Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt interfaces under the X-ray irradiation. This behavior is proposed to be related to the charge accumulation at oxygen vacancies induced traps. Based on the proposed methodology, we define the intrinsic conductive band offset (CBO) ∼1.3 eV (both for Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt) and CBO after the full saturation of the traps charging ∼0.5 eV, while the lastmore » one defines the energy position of charged traps below the bottom of conduction band. We demonstrate also the pining at the both Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt interfaces even in the “intrinsic” state, apparently induced by the presence of additional interfacial states. No shifts of Ta4f line and band alignment in over stoichiometric Ta{sub 2}O{sub 5+x}/Pt structure during X-ray irradiation, as well as the absence of pinning, resulting in increase of CBO up to 2.3 eV are found. This behavior is related to the PtO{sub 2} interfacing layer formation at Ta{sub 2}O{sub 5+x}/Pt, blocking the charging of the surface states and associated dipole formation.« less

A Proposed Computed Tomography Contrast Agent Using Carboxybetaine Zwitterionic Tantalum Oxide Nanoparticles: Imaging, Biological, and Physicochemical Performance.

PubMed

FitzGerald, Paul F; Butts, Matthew D; Roberts, Jeannette C; Colborn, Robert E; Torres, Andrew S; Lee, Brian D; Yeh, Benjamin M; Bonitatibus, Peter J

2016-12-01

The aim of this study was to produce and evaluate a proposed computed tomography (CT) contrast agent based on carboxybetaine zwitterionic (CZ)-coated soluble tantalum oxide (TaO) nanoparticles (NPs). We chose tantalum to provide superior imaging performance compared with current iodine-based clinical CT contrast agents. We developed the CZ coating to provide biological and physical performance similar to that of current iodinated contrast agents. In addition, the aim of this study was to evaluate the imaging, biological, and physicochemical performance of this proposed contrast agent compared with clinically used iodinated agents. We evaluated CT imaging performance of our CZ-TaO NPs compared with that of an iodinated agent in live rats, imaged centrally located within a tissue-equivalent plastic phantom that simulated a large patient. To evaluate vascular contrast enhancement, we scanned the rats' great vessels at high temporal resolution during and after contrast agent injection. We performed several in vivo CZ-TaO NP studies in healthy rats to evaluate tolerability. These studies included injecting the agent at the anticipated clinical dose (ACD) and at 3 times and 6 times the ACD, followed by longitudinal hematology to assess impact to blood cells and organ function (from 4 hours to 1 week). Kidney histological analysis was performed 48 hours after injection at 3 times the ACD. We measured the elimination half-life of CZ-TaO NPs from blood, and we monitored acute kidney injury biomarkers with a kidney injury assay using urine collected from 4 hours to 1 week. We measured tantalum retention in individual organs and in the whole carcass 48 hours after injection at ACD. Carboxybetaine zwitterionic TaO NPs were synthesized and analyzed in detail. We used multidimensional nuclear magnetic resonance to determine surface functionality of the NPs. We measured NP size and solution properties (osmolality and viscosity) of the agent over a range of tantalum concentrations

Structure refinement for tantalum nitrides nanocrystals with various morphologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Lianyun; School of Science, Beijing Jiaotong University, 3 Shang Yuan Cun, Haidian District, Beijing 100044; Huang, Kai

2012-07-15

Graphical abstract: Tantalum nitrides nanocrystals with various phases and morphologies for the first time have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. Highlights: ► The spherical TaN, cuboidal TaN{sub 0.83} and TaN{sub 0.5} nanocrystals have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. ► The crystal structures of different tantalum nitrides were determined by Rietveld refinement on the X-ray diffraction data and the examinations of electron microcopies. ► The specific surface area of the tantalum nitrides powders was around 10 m{supmore » 2} g{sup −1}. ► Tantalum nitrides powders could be suitable for capacitor with high specific capacitance. -- Abstract: Tantalum nitrides (TaN{sub x}) nanocrystals with different phase and morphology have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. The crystal structures of tantalum nitrides were determined by Rietveld refinement based on the X-ray diffraction data. The morphologies of various tantalum nitrides nanocrystals in high quality were analyzed through the electron microcopies examinations. The spherical TaN nanoparticles, cuboidal TaN{sub 0.83} and TaN{sub 0.5} nanocrystals have been selectively prepared at different annealing temperatures. In addition, the specific surface areas of the tantalum nitrides nanocrystals measured by BET method were around 9.87–11.64 m{sup 2} g{sup −1}, indicating that such nano-sized tantalum nitrides could be suitable for capacitor with high specific capacitance.« less

Influences of the residual argon gas and thermal annealing on Ta2O5 and SiO2 thin film filters

NASA Astrophysics Data System (ADS)

Liu, Wen-Jen; Chen, Chih-Min; Lai, Yin-Chieh

2005-04-01

Ion beam assisted deposition (IBAD) technique had widely used for improving stacking density and atomic mobility of thin films in many applications, especially adopted in optical film industries. Tantalum pentaoxide (Ta2O5) and silicon oxides (SiO2) optical thin films were deposited on the quartz glass substrate by using argon ion beam assisted deposition, and the influences of the residual argon gas and thermal annealing processes on the optical property, stress, compositional and microstructure evolution of the thin films were investigated in this study. Ta2O5 thin films were analyzed by XPS indicated that the ratio value of oxygen to tantalum was insufficient, at the same time, the residual argon gas in the thin films might result in film and device instabilities. Adopting oxygen-thermal annealing treatment at the temperature of 425°C, the thin films not only decreased the residual argon gas and the surface roughness, but also provided the sufficient stoichiometric ratio. Simultaneously, microstructure examination indicated few nano-crystallized structures and voids existed in Ta2O5 thin films, and possessed reasonable refractive index and lower extinction coefficient. By the way, we also suggested the IBAD system using the film compositional gas ion beam to replace the argon ion beam for assisting deposited optical films. The designed (HL)6H6LH(LH)6 multi-layers indicated higher insertion loss than the designed (HL)68H(LH)6 multi-layers. Therefore, using the high refractive index as spacer material represented lower insertion loss.

The Electrochemical Behavior of Mo-Ta Alloy in Phosphoric Acid Solution for TFT-LCD Application.

PubMed

Lee, Sang-Hyuk; Kim, Byoung O; Seo, Jong Hyun

2015-10-01

Molybdenum-tantalum alloy thin film is a suitable material for the higher corrosion resistance and low resistivity for gate and data metal lines. In this study, Mo-Ta alloy thin films were prepared by using a DC magnetron co-sputtering system on a glass substrate. An abrupt increase in the etching rates of low Mo-Ta alloys was observed. From the observed impedance analysis, the defect densities in the MoTa oxide films increased from 5.4 x 10(21) (cm(-3)) to 8.02 x 10(21) (cm(-3)) up to the 6 at% of tantalum level; and above the 6 at% of tantalum level, the defect densities decreased. This electrochemical behavior is explained by the mechanical instability of the MoTa oxide film.

21 CFR 886.3100 - Ophthalmic tantalum clip.

Code of Federal Regulations, 2010 CFR

2010-04-01

... blood vessels in the eye. (b) Classification. Class II (special controls). The device is exempt from the...) MEDICAL DEVICES OPHTHALMIC DEVICES Prosthetic Devices § 886.3100 Ophthalmic tantalum clip. (a) Identification. An ophthalmic tantalum clip is a malleable metallic device intended to be implanted permanently...

Efficacy of Tantalum Tungsten Alloys for Diffusion Barrier Applications

NASA Astrophysics Data System (ADS)

Smathers, D. B.; Aimone, P. R.

2017-12-01

Traditionally either Niobium, Tantalum or a combination of both have been used as diffusion barriers in Nb3Sn Multi-filament wire. Vanadium has also been used successfully but the ultimate RRR of the copper is limited unless an external shell of Niobium is included. Niobium is preferred over Tantalum when alternating current losses are not an issue as the Niobium will react to form Nb3Sn. Pure Tantalum tends to deform irregularly requiring extra starting thickness to ensure good barrier qualities. Our evaluations showed Tantalum lightly alloyed with 3 wt% Tungsten is compatible with the wire drawing process while deforming as well as or better than pure Niobium. Ta3wt%W has been processed as a single barrier and as a distributed barrier to fine dimensions. In addition, the higher modulus and strength of the Tantalum Tungsten alloy improves the overall tensile properties of the wire.

Studying tantalum-based high-κ dielectrics in terms of capacitance measurements

NASA Astrophysics Data System (ADS)

Stojanovska-Georgievska, L.

2016-08-01

The trend of rapid development of microelectronics towards nano-miniaturization dictates the inevitable introduction of dielectrics with high permittivity (high-κ dielectrics), as alternative material for replacing SiO2. Therefore, studying these materials in terms of their characteristics, especially in terms of reliability, is of great importance for proper design and manufacture of devices. In this paper, alteration of capacitance in different frequency regimes is used, in order to determine the overall behavior of the material. Samples investigated here are MOS structures containing nanoscale tantalum based dielectrics. Layers of pure Ta2O5, but also Hf and Ti doped tantalum pentoxide, i.e. Ta2O5:Hf and Ta2O5:Ti are studied here. All samples are considered as ultrathin oxide layers with thicknesses less than 15 nm, obtained by radio frequent sputtering on p-type silicon substrate. Measuring capacitive characteristics enables determination of several specific parameters of the structures. The obtained results for capacitance in accumulation, the thickness and time evolution of the interfacial SiO2 layer, values of flatband and threshold voltage, density of oxide charges, interfacial and border states, and reliability properties favor the possibilities for more intensive use of studied materials in new nanoelectronic technologies.

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

DOEpatents

Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

2010-07-13

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Nanochips of Tantalum Oxide Nanodots as artificial-microenvironments for monitoring Ovarian cancer progressiveness

NASA Astrophysics Data System (ADS)

Dhawan, Udesh; Wang, Ssu-Meng; Chu, Ying Hao; Huang, Guewha S.; Lin, Yan Ren; Hung, Yao Ching; Chen, Wen Liang

2016-08-01

Nanotopography modulates cell characteristics and cell behavior. Nanotopological cues can be exploited to investigate the in-vivo modulation of cell characteristics by the cellular microenvironment. However, the studies explaining the modulation of tumor cell characteristics and identifying the transition step in cancer progressiveness are scarce. Here, we engineered nanochips comprising of Tantalum oxide nanodot arrays of 10, 50, 100 and 200 nm as artificial microenvironments to study the modulation of cancer cell behavior. Clinical samples of different types of Ovarian cancer at different stages were obtained, primary cultures were established and then seeded on different nanochips. Immunofluorescence (IF) was performed to compare the morphologies and cell characteristics. Indices corresponding to cell characteristics were defined. A statistical comparison of the cell characteristics in response to the nanochips was performed. The cells displayed differential growth parameters. Morphology, Viability, focal adhesions, microfilament bundles and cell area were modulated by the nanochips which can be used as a measure to study the cancer progressiveness. The ease of fabrication of nanochips ensures mass-production. The ability of the nanochips to act as artificial microenvironments and modulate cell behavior may lead to further prospects in the markerless monitoring of the progressiveness and ultimately, improving the prognosis of Ovarian cancer.

Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

NASA Astrophysics Data System (ADS)

Wan, Yimao; Bullock, James; Cuevas, Andres

2015-05-01

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta2O5) underneath plasma enhanced chemical vapour deposited silicon nitride (SiNx). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta2O5 and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω.cm and n-type 1.0 Ω.cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm2 and 68 fA/cm2 are measured on 150 Ω/sq boron-diffused p+ and 120 Ω/sq phosphorus-diffused n+ c-Si, respectively. Capacitance-voltage measurements reveal a negative fixed insulator charge density of -1.8 × 1012 cm-2 for the Ta2O5 film and -1.0 × 1012 cm-2 for the Ta2O5/SiNx stack. The Ta2O5/SiNx stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.

Thermal expansion method for lining tantalum alloy tubing with tungsten

NASA Technical Reports Server (NTRS)

Watson, G. K.; Whittenberger, J. D.; Mattson, W. F.

1973-01-01

A differential-thermal expansion method was developed to line T-111 (tantalum - 8 percent tungsten - 2 percent hafnium) tubing with a tungsten diffusion barrier as part of a fuel element fabrication study for a space power nuclear reactor concept. This method uses a steel mandrel, which has a larger thermal expansion than T-111, to force the tungsten against the inside of the T-111 tube. Variables investigated include lining temperature, initial assembly gas size, and tube length. Linear integrity increased with increasing lining temperature and decreasing gap size. The method should have more general applicability where cylinders must be lined with a thin layer of a second material.

Hafnium radioisotope recovery from irradiated tantalum

DOEpatents

Taylor, Wayne A.; Jamriska, David J.

2001-01-01

Hafnium is recovered from irradiated tantalum by: (a) contacting the irradiated tantalum with at least one acid to obtain a solution of dissolved tantalum; (b) combining an aqueous solution of a calcium compound with the solution of dissolved tantalum to obtain a third combined solution; (c) precipitating hafnium, lanthanide, and insoluble calcium complexes from the third combined solution to obtain a first precipitate; (d) contacting the first precipitate of hafnium, lanthanide and calcium complexes with at least one fluoride ion complexing agent to form a fourth solution; (e) selectively adsorbing lanthanides and calcium from the fourth solution by cationic exchange; (f) separating fluoride ion complexing agent product from hafnium in the fourth solution by adding an aqueous solution of ferric chloride to obtain a second precipitate containing the hafnium and iron; (g) dissolving the second precipitate containing the hafnium and iron in acid to obtain an acid solution of hafnium and iron; (h) selectively adsorbing the iron from the acid solution of hafnium and iron by anionic exchange; (i) drying the ion exchanged hafnium solution to obtain hafnium isotopes. Additionally, if needed to remove residue remaining after the product is dried, dissolution in acid followed by cation exchange, then anion exchange, is performed.

Influence of process parameters on plasma electrolytic surface treatment of tantalum for biomedical applications

NASA Astrophysics Data System (ADS)

Sowa, Maciej; Woszczak, Maja; Kazek-Kęsik, Alicja; Dercz, Grzegorz; Korotin, Danila M.; Zhidkov, Ivan S.; Kurmaev, Ernst Z.; Cholakh, Seif O.; Basiaga, Marcin; Simka, Wojciech

2017-06-01

This work aims to quantify the effect of anodization voltage and electrolyte composition used during DC plasma electrolytic oxidation (PEO), operated as a 2-step process, on the surface properties of the resulting oxide coatings on tantalum. The first step consisted of galvanostatic anodization (150 mA cm-2) of the tantalum workpiece up to several limiting voltages (200, 300, 400 and 500 V). After attaining the limiting voltage, the process was switched to voltage control, which resulted in a gradual decrease of the anodic current density. The anodic treatment was realized in a 0.5 M Ca(H2PO2)2 solution, which was then modified by the addition of 1.15 M Ca(HCOO)2 as well as 1.15 M and 1.5 M Mg(CH3COO)2. The increasing voltage of anodization led to the formation of thicker coatings, with larger pores and enriched with electrolytes species to a higher extent. The solutions containing HCOO- and CH3COO- ions caused the formation of coatings which were slightly hydrophobic (high contact angle). In the case of the samples anodized up to 500 V, scattered crystalline deposits were observed. Bioactive phases, such as hydroxyapatite, were detected in the treated oxide coatings by XRD and XPS.

Thin-Film Solid Oxide Fuel Cells

NASA Technical Reports Server (NTRS)

Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

2009-01-01

The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

Consequence of oxidant concentration on XPS properties of chemically synthesized polythiophene thin films

NASA Astrophysics Data System (ADS)

Kamat, Sandip V.; Chhabra, Jasvinder; Patil, V. S.; Yadav, J. B.; Puri, R. K.; Puri, Vijaya

2018-05-01

The polythiophene thin films were prepared by a wellknown chemical bath deposition technique. The deposited thin films were characterized for structural morphological properties and the adhesion of these thin films were measured by direct pull off (DPO) method, the effect of oxidant concentration on these thin films also studied. The FTIR spectra of chemically deposited polythiophene thin films shows the absorption peak at 836 cm-1 which represents c-s stretching vibrations, shifts to 869 cm-1 as the oxidant concentration increases. The band at 666 cm-1 representing c-s-c ring deformation becomes sharper and appears with a shoulder peak due to increase in oxidant concentration.

Effect of thin oxide layers incorporated in spin valve structures

NASA Astrophysics Data System (ADS)

Gillies, M. F.; Kuiper, A. E. T.; Leibbrandt, G. W. R.

2001-06-01

The enhancement of the magnetoresistance effect, induced by incorporating nano-oxide layers (NOLs) in a bottom-type spin valve, was studied for various preparation conditions. The effect of a NOL in the Co90Fe10 pinned layer was found to depend critically on the oxygen pressure applied to form the thin oxide film. Pressures over 10-3 Torr O2 yield oxides thicker than about 0.7 nm, which apparently deteriorate the biasing field which exists over the oxide. The magnetoresistance values can further be raised by forming a specular reflecting oxide on top of the sense layer. Promising results were obtained with an Al2O3 capping layer formed in a solid-state oxidation reaction that occurs spontaneously when a thin Al layer is deposited on the oxidized surface of the Co90Fe10 sense layer.

Developing Multilayer Thin Film Strain Sensors With High Thermal Stability

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Fralick, Gustave C.; Gonzalez, Jose M., III

2006-01-01

A multilayer thin film strain sensor for large temperature range use is under development using a reactively-sputtered process. The sensor is capable of being fabricated in fine line widths utilizing the sacrificial-layer lift-off process that is used for micro-fabricated noble-metal sensors. Tantalum nitride films were optimized using reactive sputtering with an unbalanced magnetron source. A first approximation model of multilayer resistance and temperature coefficient of resistance was used to set the film thicknesses in the multilayer film sensor. Two multifunctional sensors were fabricated using multilayered films of tantalum nitride and palladium chromium, and tested for low temperature resistivity, TCR and strain response. The low temperature coefficient of resistance of the films will result in improved stability in thin film sensors for low to high temperature use.

Evanescent field Sensors Based on Tantalum Pentoxide Waveguides – A Review

PubMed Central

Schmitt, Katrin; Oehse, Kerstin; Sulz, Gerd; Hoffmann, Christian

2008-01-01

Evanescent field sensors based on waveguide surfaces play an important role where high sensitivity is required. Particularly tantalum pentoxide (Ta2O5) is a suitable material for thin-film waveguides due to its high refractive index and low attenuation. Many label-free biosensor systems such as grating couplers and interferometric sensors as well as fluorescence-based systems benefit from this waveguide material leading to extremely high sensitivity. Some biosensor systems based on Ta2O5 waveguides already took the step into commercialization. This report reviews the various detection systems in terms of limit of detection, the applications, and the suitable surface chemistry. PMID:27879731

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties.

PubMed

Dey, Arjun; Nayak, Manish Kumar; Esther, A Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A K; Bera, Parthasarathi; Barshilia, Harish C; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D Raghavendra; Sridhara, N; Sharma, Anand Kumar

2016-11-17

Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V 2 O 5 , V 2 O 3 and VO 2 along with MoO 3 . Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10 -5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

NASA Astrophysics Data System (ADS)

Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

2016-11-01

Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10-5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

PubMed Central

Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

2016-01-01

Vanadium oxide-molybdenum oxide (VO-MO) thin (21–475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45–50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10−5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films. PMID:27853234

Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coloma Ribera, R., E-mail: r.colomaribera@utwente.nl; Kruijs, R. W. E. van de; Yakshin, A. E.

2015-08-07

In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

High Temperature Evaluation of Tantalum Capacitors - Test 1

DOE Data Explorer

Cieslewski, Grzegorz

2014-09-28

Tantalum capacitors can provide much higher capacitance at high-temperatures than the ceramic capacitors. This study evaluates selected tantalum capacitors at high temperatures to determine their suitability for you in geothermal field. This data set contains results of the first test where three different types of capacitors were evaluated at 260C.

2017 NEPP Tasks Update for Ceramic and Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2017-01-01

This presentation gives an overview of current NEPP tasks on ceramic and tantalum capacitors and plans for the future. It includes tasks on leakage currents, gas generation and case deformation in wet tantalum capacitors; ESR degradation and acceleration factors in MnO2 and polymer cathode capacitors. Preliminary results on the effect of moisture on degradation of reverse currents in MnO2 tantalum capacitors are discussed. Latest results on mechanical characteristics of MLCCs and modeling of degradation of leakage currents in BME capacitors with defects are also presented.

METHOD OF PROTECTING TANTALUM CRUCIBLES AGAINST REACTION WITH MOLTEN URANIUM

DOEpatents

Feder, H.M.; Chellew, N.R.

1960-08-16

Tantalum crucibles against reaction with molten uranium by contacting the surfaces to be protected with metallic boron (as powder, vapor, or suspension in a liquid-volatilenonreacting medium, such as acetone and petroleum oil) at about 1800 deg C in vacuum, discontinuing contact with the boron, and heating the crucibles to a temperature of between 1800 aad 2000 deg C, whereby the tantalum boride formed in the first heating step is converted to tantalum monoboride.

Capacitor electrode stimulates nerve or muscle without oxidation-reduction reactions.

PubMed

Guyton, D L; Hambrecht, F T

1973-07-06

Porous tantalum disks, available as "slugs" from the capacitor industry, have large available surface area and a thin insulating coating of tantalum pentoxide. When implanted, they fill with extracellular fluid and operate as capacitor-stimulating electrodes having high capacitance per unit volume. Capable of stimulating excitable tissute without generating electrochemical by-products, these electrodes should provide a safer interface between neural prosthetic devices and human tissue.

Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

NASA Astrophysics Data System (ADS)

Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

2017-07-01

In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

Extreme Response in Tension and Compression of Tantalum

NASA Astrophysics Data System (ADS)

Remington, Tane Perry

This research on a model bcc metal, tantalum, has three components: the study of tensile failure; defects generated under a nanoindenter; and dislocation velocities in an extreme regime generated by pulsed lasers. The processes of dynamic failure by spalling were established in nano, poly, and mono crystalline tantalum in recovery experiments following laser compression and release. The process of spall was characterized by different techniques: optical microscopy, scanning electron microscopy, microcomputerized tomography and electron backscatter diffraction. Additionally, the pull back signal was measured by VISAR and the pressure decay was compared with HYADES simulations. There are clear differences in the microscopic fracture mechanisms, dictated by the grain sizes. In the nano and poly crystals, spalling occurred by ductile fracture favoring grain boundaries. In the monocrystals, grain boundaries are absent, and the process was of ductile failure by void initiation, growth and coalescence. The spall strength of single crystalline tantalum was higher than the poly and nano crystals. It was experimentally confirmed that spall strength in tantalum increases with strain rate. In order to generate dislocations close to the surface, single crystalline tantalum with orientations (100), (110) and (111) was nanoindented with a Berkovich tip. Atomic force microscopy showed pile-ups of dislocations around the perimeter of the nanoindentations. Sections of nanoindentations were focused ion beam cut into transmission electron microscope foils. The mechanisms of deformation under a nanoindentation in tantalum were identified and quantified. Molecular dynamics simulations were conducted and the simulated plastic deformation proceeds by the formation of nanotwins, which rapidly evolve into shear dislocation loops. Dislocation densities under the indenter were estimated experimentally (~1.2 x 1015 m-2), by MD (~7 x1015 m-2) and through an analytical calculation (2.6--19 x10

Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures

NASA Astrophysics Data System (ADS)

Aziz, A.; Kassmi, K.; Maimouni, R.; Olivié, F.; Sarrabayrouse, G.; Martinez, A.

2005-09-01

In this paper, we present the theoretical and experimental results of the influence of a charge trapped in ultra-thin oxide of metal/ultra-thin oxide/semiconductor structures (MOS) on the I(Vg) current-voltage characteristics when the conduction is of the Fowler-Nordheim (FN) tunneling type. The charge, which is negative, is trapped near the cathode (metal/oxide interface) after constant current injection by the metal (Vg<0). Of particular interest is the influence on the Δ Vg(Vg) shift over the whole I(Vg) characteristic at high field (greater than the injection field (>12.5 MV/cm)). It is shown that the charge centroid varies linearly with respect to the voltage Vg. The behavior at low field (<12.5 MV/cm) is analyzed in référence A. Aziz, K. Kassmi, Ka. Kassmi, F. Olivié, Semicond. Sci. Technol. 19, 877 (2004) and considers that the trapped charge centroid is fixed. The results obtained make it possible to analyze the influence of the injected charge and the applied field on the centroid position of the trapped charge, and to highlight the charge instability in the ultra-thin oxide of MOS structures.

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides.

PubMed

Sivakumar, Sai; Zwier, Elizabeth; Meisenheimer, Peter Benjamin; Heron, John T

2018-05-29

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (Cu variant) entropy-stabilized oxides. Phase pure and chemically homogeneous (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (x = 0.20, 0.27, 0.33) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (x = 0.11, 0.27) ceramic pellets are synthesized and used in the deposition of ultra-high quality, phase pure, single crystalline thin films of the target stoichiometry. A detailed methodology for the deposition of smooth, chemically homogeneous, entropy-stabilized oxide thin films by pulsed laser deposition on (001)-oriented MgO substrates is described. The phase and crystallinity of bulk and thin film materials are confirmed using X-ray diffraction. Composition and chemical homogeneity are confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy. The surface topography of thin films is measured with scanning probe microscopy. The synthesis of high quality, single crystalline, entropy-stabilized oxide thin films enables the study of interface, size, strain, and disorder effects on the properties in this new class of highly disordered oxide materials.

ON THE GEOCHEMISTRY OF NIOBIUM AND TANTALUM IN CLAYS (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pachadzhanov, D.N.

1963-10-01

With the aid of the spectral method with a preliminary enrichment in tannin, the niobium and tantalum content was determined in some humid and arid clays of the Russian platform. The investigated samples were composed of 354 specimens. The average content of niobium in humid clays is 0.0020%, of tantalum 0.00024% (the Nb/Ta ratio is 8.4) and in arid clays is respectively the content of niobium 0.00133% and the content of tantalum 0.00009% (the Nb/Ta ratio is 14.8). The average value of the content of niobium content for all studied clays is 0.00183% and of the tantalum content 0.00020%, themore » Nb/Ta ratio being 9.1. In clays an interconnection of niobium with tantalum, as well as with aluminium, titanium, zirconium, and hafnium was observed. However, on the background of this connection some separation of the named elements is noted. A tendency for the Nb/Ta ratio shift from the region of matter removal towards the center of the marine basin was observed. The study of niobium and tantalum distribution over different clay fractions showed that one part of elements is connected with zircon and titanium minerals in aleuosand fraction (0.1-- 0.01 mm). Another, approximately similar part is contained in the proper clay fraction (<0. 01 mm), the tantalum somewhat more concentrating in the aleurosand fraction and niobium in the clay fraction. (P.C.H.)« less

Multi-scale Modeling of Plasticity in Tantalum.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lim, Hojun; Battaile, Corbett Chandler.; Carroll, Jay

In this report, we present a multi-scale computational model to simulate plastic deformation of tantalum and validating experiments. In atomistic/ dislocation level, dislocation kink- pair theory is used to formulate temperature and strain rate dependent constitutive equations. The kink-pair theory is calibrated to available data from single crystal experiments to produce accurate and convenient constitutive laws. The model is then implemented into a BCC crystal plasticity finite element method (CP-FEM) model to predict temperature and strain rate dependent yield stresses of single and polycrystalline tantalum and compared with existing experimental data from the literature. Furthermore, classical continuum constitutive models describingmore » temperature and strain rate dependent flow behaviors are fit to the yield stresses obtained from the CP-FEM polycrystal predictions. The model is then used to conduct hydro- dynamic simulations of Taylor cylinder impact test and compared with experiments. In order to validate the proposed tantalum CP-FEM model with experiments, we introduce a method for quantitative comparison of CP-FEM models with various experimental techniques. To mitigate the effects of unknown subsurface microstructure, tantalum tensile specimens with a pseudo-two-dimensional grain structure and grain sizes on the order of millimeters are used. A technique combining an electron back scatter diffraction (EBSD) and high resolution digital image correlation (HR-DIC) is used to measure the texture and sub-grain strain fields upon uniaxial tensile loading at various applied strains. Deformed specimens are also analyzed with optical profilometry measurements to obtain out-of- plane strain fields. These high resolution measurements are directly compared with large-scale CP-FEM predictions. This computational method directly links fundamental dislocation physics to plastic deformations in the grain-scale and to the engineering-scale applications. Furthermore

Rutherford forward scattering and elastic recoil detection (RFSERD) as a method for characterizing ultra-thin films

DOE PAGES

Lohn, Andrew J.; Doyle, Barney L.; Stein, Gregory J.; ...

2014-04-03

We present a novel ion beam analysis technique combining Rutherford forward scattering and elastic recoil detection (RFSERD) and demonstrate its ability to increase efficiency in determining stoichiometry in ultrathin (5-50 nm) films as compared to Rutherford backscattering. In the conventional forward geometries, scattering from the substrate overwhelms the signal from light atoms but in RFSERD, scattered ions from the substrate are ranged out while forward scattered ions and recoiled atoms from the thin film are simultaneously detected in a single detector. Lastly, the technique is applied to tantalum oxide memristors but can be extended to a wide range of materialsmore » systems.« less

Development and Applications of Porous Tantalum Trabecular Metal Enhanced Titanium Dental Implants

PubMed Central

Bencharit, Sompop; Byrd, Warren C.; Altarawneh, Sandra; Hosseini, Bashir; Leong, Austin; Reside, Glenn; Morelli, Thiago; Offenbacher, Steven

2013-01-01

Statement of Problem Porous tantalum trabecular metal has recently been incorporated in titanium dental implants as a new form of implant surface enhancement. However, there is little information on the applications of this material in implant dentistry. Methods We, therefore review the current literature on the basic science and clinical uses of this material. Results Porous tantalum metal is used to improve the contact between osseous structure and dental implants; and therefore presumably facilitate osseointegration. Success of porous tantalum metal in orthopedic implants led to the incorporation of porous tantalum metal in the design of root-from endosseous titanium implants. The porous tantalum three-dimensional enhancement of titanium dental implant surface allows for combining bone ongrowth together with bone ingrowth, or osseoincorporation. While little is known about the biological aspect of the porous tantalum in the oral cavity, there seems to be several possible advantages of this implant design. This article reviews the biological aspects of porous tantalum enhanced titanium dental implants, in particular the effects of anatomical consideration and oral environment to implant designs. Conclusions We propose here possible clinical situations and applications for this type of dental implant. Advantages and disadvantages of the implants as well as needed future clinical studies are discussed. PMID:23527899

Thermal shock and erosion resistant tantalum carbide ceramic material

NASA Technical Reports Server (NTRS)

Honeycutt, L., III; Manning, C. R. (Inventor)

1978-01-01

Ceramic tantalum carbide artifacts with high thermal shock and mechanical erosion resistance are provided by incorporating tungsten-rhenium and carbon particles in a tantalum carbide matrix. The mix is sintered by hot pressing to form the ceramic article which has a high fracture strength relative to its elastic modulus and thus has an improved thermal shock and mechanical erosion resistance. The tantalum carbide is preferable less than minus 100 mesh, the carbon particles are preferable less than minus 100 mesh, and the tungsten-rhenium particles are preferable elongate, having a length to thickness ratio of at least 2/1. Tungsten-rhenium wire pieces are suitable as well as graphite particles.

Amorphous nickel incorporated tin oxide thin film transistors

NASA Astrophysics Data System (ADS)

Yang, Jianwen; Ren, Jinhua; Lin, Dong; Han, Yanbing; Qu, Mingyue; Pi, Shubin; Fu, Ruofan; Zhang, Qun

2017-09-01

Nickel as a dopant has been proposed to suppress excess carrier concentration in n-type tin oxide based thin film transistors (TFTs). The influences of Ni content on nickel doped tin oxide (TNO) thin films and their corresponding TFTs were investigated with experimental results showing that the TNO thin films are amorphous. Through the comparison of the transfer characteristic curves of the TNO TFTs with different Ni contents, it was observed that Ni doping is useful to improve the performance of SnO2-based TFTs by suppressing the off-state current and shifting the threshold voltage to 0 V. The amorphous TNO TFT with 3.3 at.% Ni content shows optimum performance, with field effect mobility of 8.4 cm2 V-1 s-1, saturation mobility of 6.8 cm2 V-1 s-1, subthreshold swing value of 0.8 V/decade, and an on-off current ratio of 2.1  ×  107. Nevertheless, the bias stress stability of SnO2-based TFTs deteriorate.

International strategic minerals inventory summary report; niobium (columbium) and tantalum

USGS Publications Warehouse

Crockett, R.N.; Sutphin, D.M.

1993-01-01

Major world resources of niobium and tantalum are described in this summary report of information in the International Strategic Minerals Inventory (ISMI). ISMI is a cooperative data-collection effort of earth-science and mineral-resource agencies in Australia, Canada, the Federal Republic of Germany, the Republic of South Africa, the United Kingdom, and the United States of America. Part I of this report presents an overview of the resources and potential supply of niobium and tantalum based on inventory information; Part II contains tables of both geologic and mineral-resource information and includes production data collected by ISMI participants. Niobium is used principally as an alloying element in special steels and superalloys, and tantalum is used mainly in electronics. Minerals in the columbite-tantalite series are principal ore minerals of niobium and tantalum. Pyrochlore is a principal source of niobium. These minerals are found in carbonatite, certain rocks in alkaline igneous complexes, pegmatite, and placer deposits. ISMI estimates show that there are over 7 million metric tons of niobium and almost 0.5 million metric tons of tantalum in known deposits, outside of China and the former Soviet Union, for which reliable estimates have been made. Brazilian deposits, followed by Canadian deposits, contain by far the largest source of niobium. Tantalum production is spread widely among several countries, and Brazil and Canada are the most significant of these producers. Brazil's position is further strengthened by potential byproduct columbite from tin mining. Present economically exploitable resources of niobium appear to be sufficient for the near future, but Brazil will continue to be the predominant world supplier of ferrocolumbium. Tantalum, a byproduct of tin production, has been captive to the fluctuations of that market, but resources in pegmatite in Canada and Australia make it likely that future increases in the present modest demand will be met.

Thermochemistry of tantalum-wall cooling system with lithium and sodium working fluids

NASA Technical Reports Server (NTRS)

Tower, L. K.

1972-01-01

Plots are presented which show the distribution of oxygen between liquid lithium and tantalum or niobium, and between liquid sodium and tantalum at elevated temperatures. Additional plots showing the composition of the gas phase above the solutions of oxygen and alkali metal are presented. The use of the plots is illustrated by an example tantalum heat pipe filled with lithium.

Tantalum coatings for inertial confinement fusion dry wall designs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taylor, L.H.; Green, L.

1996-12-31

The coating on a dry first wall inertial confinement fusion reactor must survive the target explosion and be ductile, inexpensive, and compatible with the materials in the target, i.e. have a high atomic number Z. Calculations indicate that tantalum is the best choice for the coating material. As a test of this design 1 mm tantalum coatings were plasma sprayed onto ferrite steel tubes. They were then subjected to 100 heating-cooling cycles which simulated the stressful thermal cycling which would be encountered during five years of plant startups and shutdowns. The coatings were undamaged and continued to bond well tomore » the steel. Furthermore, chemical reactions should not degrade tantalum coatings.« less

Analysis of Zinc Oxide Thin Films Synthesized by Sol-Gel via Spin Coating

NASA Astrophysics Data System (ADS)

Wolgamott, Jon Carl

Transparent conductive oxides are gaining an increasingly important role in optoelectronic devices such as solar cells. Doped zinc oxide is a candidate as a low cost and nontoxic alternative to tin doped indium oxide. Lab results have shown that both n-type and p-type zinc oxide can be created on a small scale. This can allow zinc oxide to be used as either an electrode as well as a buffer layer to increase efficiency and protect the active layer in solar cells. Sol-gel synthesis is emerging as a low temperature, low cost, and resource efficient alternative to producing transparent conducting oxides such as zinc oxide. For sol-gel derived zinc oxide thin films to reach their potential, research in this topic must continue to optimize the known processing parameters and expand to new parameters to tighten control and create novel processing techniques that improve performance. The processing parameters of drying and annealing temperatures as well as cooling rate were analyzed to see their effect on the structure of the prepared zinc oxide thin films. There were also preliminary tests done to modify the sol-gel process to include silver as a dopant to produce a p-type thin film. The results from this work show that the pre- and post- heating temperatures as well as the cooling rate all play their own unique role in the crystallization of the film. Results from silver doping show that more work needs to be done to create a sol-gel derived p-type zinc oxide thin film.

Constitutive behavior of tantalum and tantalum-tungsten alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, S.R.; Gray, G.T. III

1996-10-01

The effects of strain rate, temperature, and tungsten alloying on the yield stress and the strain-hardening behavior of tantalum were investigated. The yield and flow stresses of unalloyed Ta and tantalum-tungsten alloys were found to exhibit very high rate sensitivities, while the hardening rates in Ta and Ta-W alloys were found to be insensitive to strain rate and temperature at lower temperatures or at higher strain rates. This behavior is consistent with the observation that overcoming the intrinsic Peierls stress is shown to be the rate-controlling mechanism in these materials at low temperatures. The dependence of yield stress on temperaturemore » and strain rate was found to decrease, while the strain-hardening rate increased with tungsten alloying content. The mechanical threshold stress (MTS) model was adopted to model the stress-strain behavior of unalloyed Ta and the Ta-W alloys. Parameters for the constitutive relations for Ta and the Ta-W alloys were derived for the MTS model, the Johnson-Cook (JC), and the Zerilli-Armstrong (ZA) models. The results of this study substantiate the applicability of these models for describing the high strain-rate deformation of Ta and Ta-W alloys. The JC and ZA models, however, due to their use of a power strain-hardening law, were found to yield constitutive relations for Ta and Ta-W alloys that are strongly dependent on the range of strains for which the models were optimized.« less

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

Production and investigation of thin films of metal actinides (Pu, Am, Cm, Bk, Cf)

NASA Astrophysics Data System (ADS)

Radchenko, V. M.; Ryabinin, M. A.; Stupin, V. A.

2010-03-01

Under limited availability of transplutonium metals some special techniques and methods of their production have been developed that combine the process of metal reduction from a chemical compound and preparation of a sample for examination. In this situation the evaporation and condensation of metal onto a substrate becomes the only possible technology. Thin film samples of metallic 244Cm, 248Cm and 249Bk were produced by thermal reduction of oxides with thorium followed by deposition of the metals in the form of thin layers on tantalum substrates. For the production of 249Cf metal in the form of a thin layer the method of thermal reduction of oxide with lanthanum was used. 238Pu and 239Pu samples in the form of films were prepared by direct high temperature evaporation and condensation of the metal onto a substrate. For the production of 241Am films a gram sample of plutonium-241 metal was used containing about 18 % of americium at the time of production. Thermal decomposition of Pt5Am intermetallics in vacuum was used to produce americium metal with about 80% yield. Resistivity of the metallic 249Cf film samples was found to decrease exponentially with increasing temperature. The 249Cf metal demonstrated a tendency to form preferably a DHCP structure with the sample mass increasing. An effect of high specific activity on the crystal structure of 238Pu nuclide thin layers was studied either.

Unusual Ferroelectricity in Two-Dimensional Perovskite Oxide Thin Films.

PubMed

Lu, Jinlian; Luo, Wei; Feng, Junsheng; Xiang, Hongjun

2018-01-10

Two-dimensional (2D) ferroelectricity have attracted much attention due to their applications in novel miniaturized devices such as nonvolatile memories, field effect transistors, and sensors. Since most of the commercial ferroelectric (FE) devices are based on ABO 3 perovskite oxides, it is important to investigate the properties of 2D ferroelectricity in perovskite oxide thin films. Here, based on density functional theory (DFT) calculations, we find that there exist three kinds of in-plane FE states that originate from different microscopic mechanisms: (i) a proper FE state with the polarization along [110] due to the second-order Jahn-Teller effect related to the B ion with empty d-orbitals; (ii) a robust FE state with the polarization along [100] induced by the surface effect; (iii) a hybrid improper FE state with the polarization along [110] that is induced by the trilinear coupling between two rotational modes and the A-site displacement. Interestingly, the ferroelectricity in the latter two cases becomes stronger along with decreasing the thin film thickness, in contrast to the usual behavior. Moreover, the latter two FE states are compatible with magnetism since their stability does not depend on the occupation of the d-orbitals of the B-ion. These two novel 2D FE mechanisms provide new avenues to design 2D multiferroics, as we demonstrated in SrVO and CaFeO thin film cases. Our work not only reveals new physical mechanisms of 2D ferroelectricity in perovskite oxide thin films but also provides a new route to design the high-performance 2D FE and multiferroics.

Properties of anodic oxides grown on a hafnium–tantalum–titanium thin film library

PubMed Central

Mardare, Andrei Ionut; Ludwig, Alfred; Savan, Alan; Hassel, Achim Walter

2014-01-01

A ternary thin film combinatorial materials library of the valve metal system Hf–Ta–Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott–Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven. PMID:27877648

Spectroscopic ellipsometry investigation of the optical properties of graphene oxide dip-coated on magnetron sputtered gold thin films

NASA Astrophysics Data System (ADS)

Politano, Grazia Giuseppina; Vena, Carlo; Desiderio, Giovanni; Versace, Carlo

2018-02-01

Despite intensive investigations on graphene oxide-gold nanocomposites, the interaction of graphene oxide sheets with magnetron sputtered gold thin films has not been studied yet. The optical constants of graphene oxide thin films dip-coated on magnetron sputtered gold thin films were determined by spectroscopic ellipsometry in the [300-1000] wavelength range. Moreover, the morphologic properties of the samples were investigated by SEM analysis. Graphene oxide absorbs mainly in the ultraviolet region, but when it is dip-coated on magnetron sputtered gold thin films, its optical constants show dramatic changes, becoming absorbing in the visible region, with a peak of the extinction coefficient at 3.1 eV. Using magnetron sputtered gold thin films as a substrate for graphene oxide thin films could therefore be the key to enhance graphene oxide optical sheets' properties for several technological applications, preserving their oxygen content and avoiding the reduction process.

40 CFR 421.110 - Applicability: Description of the primary columbium-tantalum subcategory.

Code of Federal Regulations, 2010 CFR

2010-07-01

... PROTECTION AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE... the production of columbium or tantalum by primary columbium-tantalum facilities. [49 FR 8817, Mar. 8...

Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes

NASA Astrophysics Data System (ADS)

MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

2016-03-01

In this work we report the fabrication of thin film transistors (TFT) with zinc oxide channel and molybdenum doped indium oxide (IMO) electrodes, achieved by room temperature sputtering. A set of devices was fabricated, with varying channel width and length from 5μm to 300μm. Output and transfer characteristics were then extracted to study the performance of thin film transistors, namely threshold voltage and saturation current, enabling to determine optimal fabrication process parameters. Optical transmission in the UV-VIS-IR are also reported.

Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Bullock, James; Cuevas, Andres

2015-05-18

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta{sub 2}O{sub 5}) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN{sub x}). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta{sub 2}O{sub 5} and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm{sup 2} and 68 fA/cm{sup 2} are measured on 150 Ω/sq boron-diffused p{sup +} and 120 Ω/sq phosphorus-diffused n{sup +} c-Si, respectively. Capacitance–voltage measurements reveal a negativemore » fixed insulator charge density of −1.8 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5} film and −1.0 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5}/SiN{sub x} stack. The Ta{sub 2}O{sub 5}/SiN{sub x} stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.« less

Subtractive Plasma-Assisted-Etch Process for Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors

DTIC Science & Technology

2015-03-26

THIN - FILM - TRANSISTORS THESIS Thomas M. Donigan, First Lieutenant, USAF AFIT-ENG-MS-15-M-027 DEPARTMENT OF THE AIR FORCE AIR UNIVERSITY AIR...DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE THIN - FILM - TRANSISTORS THESIS Presented to the Faculty Department of Electrical and...15-M-027 SUBTRACTIVE PLASMA-ASSISTED-ETCH PROCESS FOR DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE THIN - FILM - TRANSISTORS

Topical Report Tantalum – 2.5% Tungsten Machinability Testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

L. J. Lazarus

2009-09-02

Protection Association (NFPA). NFPA 484, Standard for Combustible Metals, Chapter 9 Tantalum and Annex E, supplemental Information on Tantalum require cutting oil be used when machining tantalum because it burns at such a high temperature that it breaks down the water in a water-based metalworking fluid (MWF). The NFPA guide devotes approximately 20 pages to this material. The Kansas City Plant (KCP) uses Fuchs Lubricants Ecocut Base 44 LVC as a MWF. This is a highly chlorinated oil with a high flash point (above 200° F). The chlorine is very helpful in preventing BUE (Built Up Edge) that occurs frequentlymore » with this very gummy material. The Ecocut is really a MWF additive that Fuchs uses to add chlorinated fats to other non-chlorinated MWF.« less

Nanoporous cerium oxide thin film for glucose biosensor.

PubMed

Saha, Shibu; Arya, Sunil K; Singh, S P; Sreenivas, K; Malhotra, B D; Gupta, Vinay

2009-03-15

Nanoporous cerium oxide (CeO(2)) thin film deposited onto platinum (Pt) coated glass plate using pulsed laser deposition (PLD) has been utilized for immobilization of glucose oxidase (GOx). Atomic force microscopy studies reveal the formation of nanoporous surface morphology of CeO(2) thin film. Response studies carried out using differential pulsed voltammetry (DPV) and optical measurements show that the GOx/CeO(2)/Pt bio-electrode shows linearity in the range of 25-300 mg/dl of glucose concentration. The low value of Michaelis-Menten constant (1.01 mM) indicates enhanced enzyme affinity of GOx to glucose. The observed results show promising application of the nanoporous CeO(2) thin film for glucose sensing application without any surface functionalization or mediator.

Anisotropic thermal conductivity of thin polycrystalline oxide samples

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiwari, A., E-mail: abhishektiwariiitr@gmail.com; Department of Mechanical and Aerospace Engineering, Monash University, Melbourne, VIC 3800; Boussois, K.

2013-11-15

This paper reports about the development of a modified laser-flash technique and relation to measure the in-plane thermal diffusivity of thin polycrystalline oxide samples. Thermal conductivity is then calculated with the product of diffusivity, specific heat and density. Design and operating features for evaluating in-plane thermal conductivities are described. The technique is advantageous as thin samples are not glued together to measure in-plane thermal conductivities like earlier methods reported in literature. The approach was employed to study anisotropic thermal conductivity in alumina sheet, textured kaolin ceramics and montmorillonite. Since it is rare to find in-plane thermal conductivity values for suchmore » anisotropic thin samples in literature, this technique offers a useful variant to existing techniques.« less

Low-Temperature UV-Assisted Fabrication of Metal Oxide Thin Film Transistor

NASA Astrophysics Data System (ADS)

Zhu, Shuanglin

Solution processed metal oxide semiconductors have attracted intensive attention in the last several decades and have emerged as a promising candidate for the application of thin film transistor (TFT) due to their nature of transparency, flexibility, high mobility, simple processing technique and potential low manufacturing cost. However, metal oxide thin film fabricated by solution process usually requires a high temperature (over 300 °C), which is above the glass transition temperature of some conventional polymer substrates. In order to fabricate the flexible electronic device on polymer substrates, it is necessary to find a facile approach to lower the fabrication temperature and minimize defects in metal oxide thin film. In this thesis, the electrical properties dependency on temperature is discussed and an UV-assisted annealing method incorporating Deep ultraviolet (DUV)-decomposable additives is demonstrated, which can effectively improve electrical properties solution processed metal oxide semiconductors processed at temperature as low as 220 °C. By studying a widely used indium oxide (In2O3) TFT as a model system, it is worth noted that compared with the sample without UV treatment, the linear mobility and saturation mobility of UV-annealing sample are improved by 56% and 40% respectively. Meanwhile, the subthreshold swing is decreased by 32%, indicating UV-treated device could turn on and off more efficiently. In addition to pure In2O3 film, the similar phenomena have also been observed in indium oxide based Indium-Gallium-Zinc Oxide (IGZO) system. These finding presented in this thesis suggest that the UV assisted annealing process open a new route to fabricate high performance metal oxide semiconductors under low temperatures.

Photoactive lead oxide thin films by spray pyrolysis

NASA Astrophysics Data System (ADS)

Bhagat, Dharini; Waldiya, Manmohansingh; Mukhopadhyay, Indrajit

2018-05-01

We report the synthesis of photoactive lead monoxide thin films on fluorine doped tin oxide substrate by cost effective spray pyrolysis technique using aqueous solution of lead acetate trihydrate. Influence of substrate temperature on the structural and optical properties of thin films was studied. Polymorph of lead monoxide, litharge (α-PbO), was obtained when the substrate temperature was kept constant at 360 °C. XRD analysis revealed that the deposits were tetragonal structured with preferred orientation along 002 plane. Band gap value was found to be 1.93ev from diffuse reflectance spectra.

Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device.

PubMed

Abbas, Yawar; Jeon, Yu-Rim; Sokolov, Andrey Sergeevich; Kim, Sohyeon; Ku, Boncheol; Choi, Changhwan

2018-01-19

A two terminal semiconducting device like a memristor is indispensable to emulate the function of synapse in the working memory. The analog switching characteristics of memristor play a vital role in the emulation of biological synapses. The application of consecutive voltage sweeps or pulses (action potentials) changes the conductivity of the memristor which is considered as the fundamental cause of the synaptic plasticity. In this study, a neuromorphic device using an in-situ growth of sub-tantalum oxide switching layer is fabricated, which exhibits the digital SET and analog RESET switching with an electroforming process without any compliance current (compliance free). The process of electroforming and SET is observed at the positive sweeps of +2.4 V and +0.86 V, respectively, while multilevel RESET is observed with the consecutive negative sweeps in the range of 0 V to -1.2 V. The movement of oxygen vacancies and gradual change in the anatomy of the filament is attributed to digital SET and analog RESET switching characteristics. For the Ti/Ta 2 O 3-x /Pt neuromorphic device, the Ti top and Pt bottom electrodes are considered as counterparts of the pre-synaptic input terminal and a post-synaptic output terminal, respectively.

Advanced Wet Tantalum Capacitors: Design, Specifications and Performance

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2016-01-01

Insertion of new types of commercial, high volumetric efficiency wet tantalum capacitors in space systems requires reassessment of the existing quality assurance approaches that have been developed for capacitors manufactured to MIL-PRF-39006 requirements. The specifics of wet electrolytic capacitors is that leakage currents flowing through electrolyte can cause gas generation resulting in building up of internal gas pressure and rupture of the case. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. This presentation gives a review of specifics of the design, performance, and potential reliability risks associated with advanced wet tantalum capacitors. Problems related to setting adequate requirements for DPA, leakage currents, hermeticity, stability at low and high temperatures, ripple currents for parts operating in vacuum, and random vibration testing are discussed. Recommendations for screening and qualification to reduce risks of failures have been suggested.

Advanced Wet Tantalum Capacitors: Design, Specifications and Performance

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2017-01-01

Insertion of new types of commercial, high volumetric efficiency wet tantalum capacitors in space systems requires reassessment of the existing quality assurance approaches that have been developed for capacitors manufactured to MIL-PRF-39006 requirements. The specifics of wet electrolytic capacitors is that leakage currents flowing through electrolyte can cause gas generation resulting in building up of internal gas pressure and rupture of the case. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. This presentation gives a review of specifics of the design, performance, and potential reliability risks associated with advanced wet tantalum capacitors. Problems related to setting adequate requirements for DPA, leakage currents, hermeticity, stability at low and high temperatures, ripple currents for parts operating in vacuum, and random vibration testing are discussed. Recommendations for screening and qualification to reduce risks of failures have been suggested.

Characterization of sputtered iridium oxide thin films on planar and laser micro-structured platinum thin film surfaces for neural stimulation applications

NASA Astrophysics Data System (ADS)

Thanawala, Sachin

Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.

Nucleation of fcc Ta when heating thin films

DOE PAGES

Janish, Matthew T.; Mook, William M.; Carter, C. Barry

2014-10-25

Thin tantalum films have been studied during in-situ heating in a transmission electron microscope. Diffraction patterns from the as-deposited films were typical of amorphous materials. Crystalline grains were observed to form when the specimen was annealed in-situ at 450°C. Particular attention was addressed to the formation and growth of grains with the face-centered cubic (fcc) crystal structure. As a result, these observations are discussed in relation to prior work on the formation of fcc Ta by deformation and during thin film deposition.

Tribological performance of polycrystalline tantalum-carbide-incorporated diamond films on silicon substrates

NASA Astrophysics Data System (ADS)

Ullah, Mahtab; Rana, Anwar Manzoor; Ahmed, E.; Malik, Abdul Sattar; Shah, Z. A.; Ahmad, Naseeb; Mehtab, Ujala; Raza, Rizwan

2018-05-01

Polycrystalline tantalum-carbide-incorporated diamond coatings have been made on unpolished side of Si (100) wafer by hot filament chemical vapor deposition process. Morphology of the coatings has been found to vary from (111) triangular-facetted to predominantly (111) square-faceted by increasing the concentration of tantalum carbide. The results have been compared to those of a diamond reference coating with no tantalum content. An increase in roughness has been observed with the increase of tantalum carbide (TaC) due to change in morphology of the diamond films. It is noticed that roughness of the coatings increases as grains become more square-faceted. It is found that diamond coatings involving tantalum carbide are not as resistant as diamond films with no TaC content and the coefficient of friction for such coatings with microcrystalline grains can be manipulated to 0·33 under high vacuum of 10-7 Torr. Such a low friction coefficient value enhances tribological behavior of unpolished Si substrates and can possibly be used in sliding applications.

Anomalous softening of yield strength in tantalum at high pressures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jing, Qiumin, E-mail: j-qm@163.com; Wu, Qiang; Xu, Ji-an

2015-02-07

The pressure dependence of the yield strength of tantalum was investigated experimentally up to 101 GPa at room temperature using a diamond anvil cell. A yield strength softening is observed between 52 and 84 GPa, whereas a normal trend is observed below 52 GPa and above 84 GPa. The onset pressure of the softening is in agreement with previous results obtained by the pressure gradient method and shock wave experiments. This unusual strength softening in tantalum is not related with structural transformation, preferred orientation, or material damage. Our measurements indicate that microscopic deviatoric strain is the major reason for the observed strength softening inmore » tantalum.« less

Superconductor to weak-insulator transitions in disordered tantalum nitride films

NASA Astrophysics Data System (ADS)

Breznay, Nicholas P.; Tendulkar, Mihir; Zhang, Li; Lee, Sang-Chul; Kapitulnik, Aharon

2017-10-01

We study the two-dimensional superconductor-insulator transition (SIT) in thin films of tantalum nitride. At zero magnetic field, films can be disorder-tuned across the SIT by adjusting thickness and film stoichiometry; insulating films exhibit classical hopping transport. Superconducting films exhibit a magnetic-field-tuned SIT, whose insulating ground state at high field appears to be a quantum-corrected metal. Scaling behavior at the field-tuned SIT shows classical percolation critical exponents z ν ≈1.3 , with a corresponding critical field Hc≪Hc 2 , the upper critical field. The Hall effect exhibits a crossing point near Hc, but with a nonuniversal critical value ρxy c comparable to the normal-state Hall resistivity. We propose that high-carrier-density metals will always exhibit this pattern of behavior at the boundary between superconducting and (trivially) insulating ground states.

Metal Doped Manganese Oxide Thin Films for Supercapacitor Application.

PubMed

Tung, Mai Thanh; Thuy, Hoang Thi Bich; Hang, Le Thi Thu

2015-09-01

Co and Fe doped manganese oxide thin films were prepared by anodic deposition at current density of 50 mA cm(-2) using the electrolyte containing manganese sulfate and either cobalt sulfate or ferrous sulfate. Surface morphology and crystal structure of oxides were studied by scanning electron microscope (SEM) and X-ray diffraction (XRD). Chemical composition of materials was analyzed by X-ray energy dispersive spectroscope (EDS), iodometric titration method and complexometric titration method, respectively. Supercapacitive behavior of Co and Fe doped manganese oxide films were characterized by cyclic voltammetry (CV) and impedance spectroscopy (EIS). The results show that the doped manganese oxides are composed of nano fiber-like structure with radius of 5-20 nm and remain amorphous structure after heat treatment at 100 degrees C for 2 hours. The average valence of manganese increases from +3.808 to +3.867 after doping Co and from +3.808 to +3.846 after doping Fe. The doped manganese oxide film electrodes exhibited preferably ideal pseudo-capacitive behavior. The specific capacitance value of deposited manganese oxide reaches a maximum of 175.3 F/g for doping Co and 244.6 F/g for doping Fe. The thin films retained about 84% of the initial capacity even after 500 cycles of charge-discharge test. Doping Co and Fe decreases diffusion and charge transfer resistance of the films. The electric double layer capacitance and capacitor response frequency are increased after doping.

Strain-induced phenomenon in complex oxide thin films

NASA Astrophysics Data System (ADS)

Haislmaier, Ryan

Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of

Conducting metal oxide and metal nitride nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

DiSalvo, Jr., Francis J.; Subban, Chinmayee V.

Conducting metal oxide and nitride nanoparticles that can be used in fuel cell applications. The metal oxide nanoparticles are comprised of for example, titanium, niobium, tantalum, tungsten and combinations thereof. The metal nitride nanoparticles are comprised of, for example, titanium, niobium, tantalum, tungsten, zirconium, and combinations thereof. The nanoparticles can be sintered to provide conducting porous agglomerates of the nanoparticles which can be used as a catalyst support in fuel cell applications. Further, platinum nanoparticles, for example, can be deposited on the agglomerates to provide a material that can be used as both an anode and a cathode catalyst supportmore » in a fuel cell.« less

SPM oxidation and parallel writing on zirconium nitride thin films

NASA Astrophysics Data System (ADS)

Farkas, N.; Comer, J. R.; Zhang, G.; Evans, E. A.; Ramsier, R. D.; Dagata, J. A.

2005-07-01

Systematic investigation of the SPM oxidation process of sputter-deposited ZrN thin films is reported. During the intrinsic part of the oxidation, the density of the oxide increases until the total oxide thickness is approximately twice the feature height. Further oxide growth is sustainable as the system undergoes plastic flow followed by delamination from the ZrN-silicon interface keeping the oxide density constant. ZrN exhibits superdiffusive oxidation kinetics in these single tip SPM studies. We extend this work to the fabrication of parallel oxide patterns 70 nm in height covering areas in the square centimeter range. This simple, quick, and well-controlled parallel nanolithographic technique has great potential for biomedical template fabrication.

High efficiency tantalum-based ceramic composite structures

NASA Technical Reports Server (NTRS)

Stewart, David A. (Inventor); Leiser, Daniel B. (Inventor); DiFiore, Robert R. (Inventor); Katvala, Victor W. (Inventor)

2010-01-01

Tantalum-based ceramics are suitable for use in thermal protection systems. These composite structures have high efficiency surfaces (low catalytic efficiency and high emittance), thereby reducing heat flux to a spacecraft during planetary re-entry. These ceramics contain tantalum disilicide, molybdenum disilicide and borosilicate glass. The components are milled, along with a processing aid, then applied to a surface of a porous substrate, such as a fibrous silica or carbon substrate. Following application, the coating is then sintered on the substrate. The composite structure is substantially impervious to hot gas penetration and capable of surviving high heat fluxes at temperatures approaching 3000.degree. F. and above.

Complex oxide thin films for microelectronics

NASA Astrophysics Data System (ADS)

Suvorova, Natalya

The rapid scaling of the device dimensions, namely in metal oxide semiconductor field effect transistor (MOSFET), is reaching its fundamental limit which includes the increase in allowable leakage current due to direct tunneling with decrease of physical thickness of SiO2 gate dielectric. The significantly higher relative dielectric constant (in the range 9--25) of the gate dielectric beyond the 3.9 value of silicon dioxide will allow increasing the physical thickness. Among the choices for the high dielectric constant (K) materials for future generation MOSFET application, barium strontium titanate (BST) and strontium titanate (STO) possess one of the highest attainable K values making them the promising candidates for alternative gate oxide. However, the gate stack engineering does not imply the simple replacement of the SiO2 with the new dielectric. Several requirements should be met for successful integration of a new material. The major one is a production of high level of interface states (Dit) compared to that of SiO 2 on Si. An insertion of a thin SiO2 layer prior the growth of high-K thin film is a simple solution that helps to limit reaction with Si substrate and attains a high quality interface. However, the combination of two thin films reduces the overall K of the dielectric stack. An optimization of the SiO2 underlayer in order to maintain the interface quality yet minimize the effect on K is the focus of this work. The results from our study are presented with emphasis on the key process parameters that improve the dielectric film stack. For in-situ growth characterization of BST and STO films sputter deposited on thermally oxidized Si substrates spectroscopic ellipsometry in combination with time of flight ion scattering and recoil spectrometry have been employed. Studies of material properties have been complemented with analytical electron microscopy. To evaluate the interface quality the electrical characterization has been employed using

Micro- and nanostructure of a titanium surface electric-spark-doped with tantalum and modified by high-frequency currents

NASA Astrophysics Data System (ADS)

Fomin, A. A.; Fomina, M. A.; Koshuro, V. A.; Rodionov, I. V.; Voiko, A. V.; Zakharevich, A. M.; Aman, A.; Oseev, A.; Hirsch, S.; Majcherek, S.

2016-09-01

We have studied the characteristics of the porous microstructure of tantalum coatings obtained by means of electric spark spraying on the surface of commercial grade titanium. It is established that, at an electric spark current within 0.8-2.2 A, a mechanically strong tantalum coating microstructure is formed with an average protrusion size of 5.1-5.4 µm and pore sizes from 3.5 to 9.2 µm. On the nanoscale, a structurally heterogeneous state of coatings has been achieved by subsequent thermal modification at 800-830°C with the aid of high-frequency currents. A metal oxide nanostructure with grain sizes from 40 to 120 nm is formed by short-time (~30 s) thermal modification. The coating hardness reaches 9.5-10.5 GPa at an elastic modulus of 400-550 GPa.

Nanostructured manganese oxide thin films as electrode material for supercapacitors

NASA Astrophysics Data System (ADS)

Xia, Hui; Lai, Man On; Lu, Li

2011-01-01

Electrochemical capacitors, also called supercapacitors, are alternative energy storage devices, particularly for applications requiring high power densities. Recently, manganese oxides have been extensively evaluated as electrode materials for supercapacitors due to their low cost, environmental benignity, and promising supercapacitive performance. In order to maximize the utilization of manganese oxides as the electrode material for the supercapacitors and improve their supercapacitive performance, the nanostructured manganese oxides have therefore been developed. This paper reviews the synthesis of the nanostructured manganese oxide thin films by different methods and the supercapacitive performance of different nanostructures.

Zinc Tantalum Oxynitride (ZnTaO2N) Photoanode Modified with Cobalt Phosphate Layers for the Photoelectrochemical Oxidation of Alkali Water

PubMed Central

T. Weller, Mark

2018-01-01

Photoanodes fabricated by the electrophoretic deposition of a thermally prepared zinc tantalum oxynitride (ZnTaO2N) catalyst onto indium tin oxide (ITO) substrates show photoactivation for the oxygen evolution reaction (OER) in alkaline solutions. The photoactivity of the OER is further boosted by the photodeposition of cobalt phosphate (CoPi) layers onto the surface of the ZnTaO2N photoanodes. Structural, morphological, and photoelectrochemical (PEC) properties of the modified ZnTaO2N photoanodes are studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet visible (UV−Vis) diffuse reflectance spectroscopy, and electrochemical techniques. The presence of the CoPi layer significantly improved the PEC performance of water oxidation in an alkaline sulphate solution. The photocurrent-voltage behavior of the CoPi-modified ZnTaO2N anodes was improved, with the influence being more prominent at lower oxidation potentials. A stable photocurrent density of about 2.3 mA·cm−2 at 1.23 V vs. RHE was attained upon visible light illumination. Relative to the ZnTaO2N photoanodes, an almost three-fold photocurrent increase was achieved at the CoPi/ZnTaO2N photoelectrode. Perovskite-based oxynitrides are modified using an oxygen-evolution co-catalyst of CoPi, and provide a new dimension for enhancing the photoactivity of oxygen evolution in solar-assisted water-splitting reactions. PMID:29346306

Effects of Processing Variables on Tantalum Nitride by Reactive-Ion-Assisted Magnetron Sputtering Deposition

NASA Astrophysics Data System (ADS)

Wei, Chao‑Tsang; Shieh, Han‑Ping D.

2006-08-01

The binary compound tantalum nitride (TaN) and ternary compounds tantalum tungsten nitrides (Ta1-xWxNy) exhibit interesting properties such as high melting point, high hardness, and chemical inertness. Such nitrides were deposited on a tungsten carbide (WC) die and silicon wafers by ion-beam-sputter evaporation of the respective metal under nitrogen ion-assisted deposition (IAD). The effects of N2/Ar flux ratio, post annealing, ion-assisted deposition, deposition rate, and W doping in coating processing variables on hardness, load critical scratching, oxidation resistance, stress and surface roughness were investigated. The optimum N2/Ar flux ratios in view of the hardness and critical load of TaN and Ta1-xWxNy films were ranged from 0.9 to 1.0. Doping W into TaN to form Ta1-xWxNy films led significant increases in hardness, critical load, oxidation resistance, and reduced surface roughness. The optimum doping ratio was [W/(W+Ta)]=0.85. From the deposition rate and IAD experiments, the stress in the films is mainly contributed by sputtering atoms. The lower deposition rate at a high N2/Ar flux ratio resulted in a higher compressive stress. A high compressive residual stress accounts for a high hardness. The relatively high compressive stress was attributed primarily to peening by atoms, ions and electrons during film growth, the Ta1-xWxNy films showed excellent hardness and strength against a high temperature, and sticking phenomena can essentially be avoided through their use. Ta1-xWxNy films showed better performance than the TaN film in terms of mechanical properties and oxidation resistance.

Analysis of Weibull Grading Test for Solid Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2010-01-01

Weibull grading test is a powerful technique that allows selection and reliability rating of solid tantalum capacitors for military and space applications. However, inaccuracies in the existing method and non-adequate acceleration factors can result in significant, up to three orders of magnitude, errors in the calculated failure rate of capacitors. This paper analyzes deficiencies of the existing technique and recommends more accurate method of calculations. A physical model presenting failures of tantalum capacitors as time-dependent-dielectric-breakdown is used to determine voltage and temperature acceleration factors and select adequate Weibull grading test conditions. This, model is verified by highly accelerated life testing (HALT) at different temperature and voltage conditions for three types of solid chip tantalum capacitors. It is shown that parameters of the model and acceleration factors can be calculated using a general log-linear relationship for the characteristic life with two stress levels.

Investigation of physicochemical and tribological properties of transparent oxide semiconducting thin films based on Ti-V oxides

NASA Astrophysics Data System (ADS)

Mazur, M.; Sieradzka, K.; Kaczmarek, D.; Domaradzki, J.; Wojcieszak, D.; Domanowski, P.

2013-08-01

In this paper investigations of structural and optical properties of nanocrystalline Ti-V oxide thin films are described. The films were deposited onto Corning 7059 glass using a modified reactive magnetron sputtering method. Structural investigations of prepared Ti-V oxides with vanadium addition of 19 at. % revealed amorphous structure, while incorporation of 21 and 23 at. % of vanadium resulted in V2O5 formation with crystallites sizes of 12.7 and 32.4 nm, respectively. All prepared thin films belong to transparent oxide semiconductors due to their high transmission level of ca. 60-75 % in the visible light range, and resistivity in the range of 3.3·102-1.4·105 Ωcm. Additionally, wettability and hardness tests were performed in order to evaluate the usefulness of the films for functional coatings.

Influence of tantalum underlayer on magnetization dynamics in Ni{sub 81}Fe{sub 19} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwon, Jae Hyun; Deorani, Praveen; Yoon, Jungbum

2015-07-13

The effect of tantalum (Ta) underlayer is investigated in Ni{sub 81}Fe{sub 19} thin films for magnetization dynamics. The damping parameters extracted from spin wave measurements increase systematically with increasing Ta thickness, whereas the damping parameters from ferromagnetic resonance measurements are found to be weakly dependent on the Ta thickness. The difference is attributed to propagating properties of spin wave and short spin diffusion length in Ta. The group velocity of spin waves is found to be constant for different Ta thicknesses, and nonreciprocity of spin waves is not affected by the Ta thickness. The experimental observations are supported by micromagneticmore » simulations.« less

Morphology selection for cupric oxide thin films by electrodeposition.

PubMed

Dhanasekaran, V; Mahalingam, T; Chandramohan, R

2011-10-01

Polycrystalline cupric oxide thin films were deposited using alkaline solution bath employing cathodic electrodeposition method. The thin films were electrodeposited at various solution pH. The surface morphology and elemental analyzes of the films were studied using scanning electron microscopy (SEM) and energy dispersive X-ray analysis, respectively. SEM studies revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. Mesh average on multiple lattice mode atomic force microscopy image was obtained and reported. Copyright © 2011 Wiley-Liss, Inc.

Superconductor to weak-insulator transitions in disordered tantalum nitride films

DOE PAGES

Breznay, Nicholas P.; Tendulkar, Mihir; Zhang, Li; ...

2017-10-31

Here, we study the two-dimensional superconductor-insulator transition (SIT) in thin films of tantalum nitride. At zero magnetic field, films can be disorder-tuned across the SIT by adjusting thickness and film stoichiometry; insulating films exhibit classical hopping transport. Superconducting films exhibit a magnetic-field-tuned SIT, whose insulating ground state at high field appears to be a quantum-corrected metal. Scaling behavior at the field-tuned SIT shows classical percolation critical exponents zν ≈ 1.3, with a corresponding critical field H c << H c2, the upper critical field. The Hall effect exhibits a crossing point near H c, but with a nonuniversal critical valuemore » ρ c xy comparable to the normal-state Hall resistivity. We propose that high-carrier-density metals will always exhibit this pattern of behavior at the boundary between superconducting and (trivially) insulating ground states.« less

Development of Coatings for Tantalum Alloy Nozzle Vanes

NASA Technical Reports Server (NTRS)

Stetson, A. R.; Wimber, R. T.

1967-01-01

A group of silicide coatings developed for the T222 tantalum-base alloy have afforded over 600 hours of protection at 1600 and 2400 F during cyclic exposure in air. These coatings were applied in two steps. A modifier alloy was applied by slurry techniques and was sintered in vacuum prior to siliciding by pack cementation in argon. Application of the modifier alloy by pack cementation was found to be much less effective. The addition of titanium and vanadium to molybdenum and tungsten yielded beneficial modifier alloys, whereas the addition of chromium showed no improvement. After siliciding, the 15Ti- 35W-15V-35Mo modifier alloy exhibited the best performance; one sample survived 1064 hours of oxidation at 2400 F. This same coating was the only coating to reproducibly provide 600 hours of protection at both 1600 and 2400 F; in the second and third of three experiments, involving oxidation of three to five specimens at each temperature in each experiment, no failures were observed in 600 hours of testing. The slurry coatings were also shown to protect the Cb752 and D43 columbium-base alloys.

Properties of mixed molybdenum oxide iridium oxide thin films synthesized by spray pyrolysis

NASA Astrophysics Data System (ADS)

Patil, P. S.; Kawar, R. K.; Sadale, S. B.; Inamdar, A. I.; Deshmukh, H. P.

2006-09-01

Molybdenum-doped iridium oxide thin films have been deposited onto corning glass- and fluorine-doped tin oxide coated corning glass substrates at 350 °C by using a pneumatic spray pyrolysis technique. An aqueous solution of 0.01 M ammonium molybdate was mixed with 0.01 M iridium trichloride solution in different volume proportions and the resultant solution was used as a precursor solution for spraying. The as-deposited samples were annealed at 600 °C in air medium for 1 h. The structural, electrical and optical properties of as-deposited and annealed Mo-doped iridium oxide were studied and values of room temperature electrical resistivity, and thermoelectric power were estimated. The as-deposited samples with 2% Mo doping exhibit more pronounced electrochromism than other samples, including pristine Ir oxide.

Altering properties of cerium oxide thin films by Rh doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ševčíková, Klára, E-mail: klarak.sevcikova@seznam.cz; NIMS Beamline Station at SPring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148; Nehasil, Václav, E-mail: nehasil@mbox.troja.mff.cuni.cz

2015-07-15

Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffractionmore » techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.« less

The Tri-lab Tantalum Strength Consortium

NASA Astrophysics Data System (ADS)

Flicker, Dawn G.; Arsenlis, Thomas A.; Austin, Ryan; Barton, Nathan R.; Benage, John F.; Bronkhorst, Curt A.; Brown, Justin L.; Brown, Staci L.; Buttler, William T.; Shen, Shuh-Rong; Dattelbaum, Dana M.; Fensin, Sayu J.; Gray, George T., III; Lane, J. Matthew D.; Lim, Hojun; Luscher, D. J.; Mattsson, Thomas R.; McNabb, Dennis P.; Remington, Bruce A.; Park, Hye-Sook; Prisbrey, Shon T.; Prime, Michael B.; Scharff, Robert J.; Schraad, Mark W.; Sun, Amy C.

2017-06-01

A Tri-lab consortium of experimentalists and theorists at SNL, LLNL, and LANL is joining forces to better understand tantalum strength across an unprecedented range of loading conditions. The team is collecting and comparing tantalum strength data from Hopkinson bar, Taylor cylinder, guns, Z, Omega and the NIF. These experiments, all using Ta from a single lot, span pressures from tenths to hundreds of GPa and strain rates from 103 to 107. New experiments are underway to provide more overlap between the platforms. The experiments are being simulated with a variety of models in order to determine which processes are important under which conditions. The presentation will show results to date. Sandia is a multi-program laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under contract DE-AC04-94AL85000.

Simultaneous determination of tantalum and hafnium in silicates by neutron activation analysis

USGS Publications Warehouse

Greenland, L.P.

1968-01-01

A neutron activation procedure suitable for the routine determination of tantalum and hafnium in silicates is described. The irradiated sample is fused with sodium peroxide and leached, and the insoluble hydroxides are dissolved in dilute hydrofluoric acid-hydrochloric acid. After LaF3 and AgCl scavenges, tantalum and hafnium are separated by anion exchange. Tantalum is obtained radiochemically pure; 233Pa and 95Zr contaminants in the hafnium fraction are resolved by ??-ray spectrometry. The chemical yield of the procedure is detemined after counting by re-irradiation. Values for the 8 U.S. Geological Survey standard rocks are reported. ?? 1968.

Nonlinear optical characterization of graphite oxide thin film by open aperture Z-scan technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sreeja, V. G.; Reshmi, R.; Devasia, Sebin

In this paper we explore the structural characterization of graphite oxide powder prepared from graphite powder by oxidation via modified Hummers method. The nonlinear optical properties of the spin coated graphite oxide thin film is also explored by open aperture Z-Scan technique. Structural and physiochemical properties of the samples were investigated with the help of Fourier Transform Infrared Spectroscopy (FTIR) and Raman Spectroscopy (Raman).The results of FT-IR and Raman spectroscopy showed that the graphite is oxidized by strong oxidants and the oxygen atoms are introduced into the graphite layers forming C=C, O-H and –C-H groups. The synthesized sample has goodmore » crystalline nature with lesser defects. The nonlinear optical property of GO thin film was studied by open aperture Z-Scan technique using Q-switched Nd-Yag Laser at 532 nm. The Z-scan plot showed that the investigated GO thin film has saturable absorption behavior. The nonlinear absorption coefficient and saturation intensity were also estimated to explore its applications in Q switched mode locking laser systems.« less

Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

DOE PAGES

Wang, Shuyu; Yu, Shifeng; Lu, Ming; ...

2016-11-30

In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

Biological Response of Human Bone Marrow-Derived Mesenchymal Stem Cells to Commercial Tantalum Coatings with Microscale and Nanoscale Surface Topographies

NASA Astrophysics Data System (ADS)

Skoog, Shelby A.; Kumar, Girish; Goering, Peter L.; Williams, Brian; Stiglich, Jack; Narayan, Roger J.

2016-06-01

Tantalum is a promising orthopaedic implant coating material due to its robust mechanical properties, corrosion resistance, and excellent biocompatibility. Previous studies have demonstrated improved biocompatibility and tissue integration of surface-treated tantalum coatings compared to untreated tantalum. Surface modification of tantalum coatings with biologically inspired microscale and nanoscale features may be used to evoke optimal tissue responses. The goal of this study was to evaluate commercial tantalum coatings with nanoscale, sub-microscale, and microscale surface topographies for orthopaedic and dental applications using human bone marrow-derived mesenchymal stem cells (hBMSCs). Tantalum coatings with different microscale and nanoscale surface topographies were fabricated using a diffusion process or chemical vapor deposition. Biological evaluation of the tantalum coatings using hBMSCs showed that tantalum coatings promote cellular adhesion and growth. Furthermore, hBMSC adhesion to the tantalum coatings was dependent on surface feature characteristics, with enhanced cell adhesion on sub-micrometer- and micrometer-sized surface topographies compared to hybrid nano-/microstructures. Nanostructured and microstructured tantalum coatings should be further evaluated to optimize the surface coating features to promote osteogenesis and enhance osseointegration of tantalum-based orthopaedic implants.

Scavenging of oxygen from SrTiO3 by metals and its implications for oxide thin film deposition

NASA Astrophysics Data System (ADS)

Posadas, Agham; Kormondy, Kristy; Guo, Wei; Ponath, Patrick; Kremer, Jacqueline; Hadamek, Tobias; Demkov, Alexander

SrTiO3 is a widely used substrate for the growth of other functional oxide thin films. However, SrTiO3 loses oxygen very easily during oxide thin film deposition even under relatively high oxygen pressures. In some cases, there will be an interfacial layer of oxygen-deficient SrTiO3 formed at the interface with the deposited oxide film, depending on the metals present in the film. By depositing a variety of metals layer by layer and measuring the evolution of the core level spectra of both the deposited metal and SrTiO3 using x-ray photoelectron spectroscopy, we show that there are three distinct types of behavior that occur for thin metal films on SrTiO3. We discuss the implications of these types of behavior for the growth of complex oxide thin films on SrTiO3, and which oxide thin films are expected to produce an interfacial oxygen-deficient layer depending on their elemental constituents.

Effect of Post-HALT Annealing on Leakage Currents in Solid Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2010-01-01

Degradation of leakage currents is often observed during life testing of tantalum capacitors and is sometimes attributed to the field-induced crystallization in amorphous anodic tantalum pentoxide dielectrics. However, degradation of leakage currents and the possibility of annealing of degraded capacitors have not been investigated yet. In this work the effect of annealing after highly accelerated life testing (HALT) on leakage currents in various types of solid tantalum capacitors was analyzed. Variations of leakage currents with time during annealing at temperatures from 125 oC to 180 oC, thermally stimulated depolarization (TSD) currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. Annealing resulted in a gradual decrease of leakage currents and restored their initial values. Repeat HALT after annealing resulted in reproducible degradation of leakage currents. The observed results are explained based on ionic charge instability (drift/diffusion of oxygen vacancies) in the tantalum pentoxide dielectrics using a modified Schottky conduction mechanism.

The Evaluation of Hydroxyapatite (HA) Coated and Uncoated Porous Tantalum for Biomedical Material Applications

NASA Astrophysics Data System (ADS)

Safuan, Nadia; Sukmana, Irza; Kadir, Mohammed Rafiq Abdul; Noviana, Deni

2014-04-01

Porous tantalum has been used as an orthopedic implant for bone defects as it has a good corrosion resistance and fatigue behaviour properties. However, there are some reports on the rejection of porous Ta after the implantation. Those clinical cases refer to the less bioactivity of metallic-based materials. This study aims to evaluate hydroxyapatite coated and uncoated porous Tantalum in order to improve the biocompatibility of porous tantalum implant and osseointegration. Porous tantalum was used as metallic-base substrate and hydroxyapatite coating has been done using plasma-spraying technique. Scanning Electron Microscopy (SEM) and Field Emission Scanning Electron Microscopy (FESEM) techniques were utilizes to investigate the coating characteristics while Confocal Raman Microscopy to investigate the interface and image. The effect of coating to the corrosion behaviour was assessed by employing potentiodynamic polarization tests in simulated body fluid at 37±1 °C. Based on SEM and FESEM results, the morphologies as well the weight element consists in the uncoated and hydroxyapatite coated porous tantalum were revealed. The results indicated that the decrease in corrosion current density for HA coated porous Ta compared to the uncoated porous Ta. This study concluded that by coating porous tantalum with HA supports to decrease the corrosion rate of pure porous.

NIOBIUM-TANTALUM SEPARATION

DOEpatents

Wilhelm, H.A.; Foos, R.A.

1959-01-27

The usual method for the separation of tantalum and niobium consists of a selective solvent extraction from an aqueous hydrofluoric acid solution of the metals. A difficulty encountered in this process is the fact that the corrosion problems associated with hydrofluoric acid are serious. It has been found that the corrosion caused by the hydrofluoric acid may be substantially reduced by adding to the acidic solution an amine, such as phenyl diethanolamine or aniline, and adjusting pH value to between 4 and 6.

Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu; Quesnel, David J.; Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627

2015-12-21

Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical propertiesmore » of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of

Formation of thin-film resistors on silicon substrates

DOEpatents

Schnable, George L.; Wu, Chung P.

1988-11-01

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

A photoelectrochemical (PEC) study on graphene oxide based hematite thin films heterojunction (R-GO/Fe2O3)

NASA Astrophysics Data System (ADS)

Sharma, Poonam; Zachariah, Michael; Ehrman, Sheryl; Shrivastava, Rohit; Dass, Sahab; Satsangi, Vibha; Michael Zachariah, Sheryl Ehrman Collaboration; Rohit Shrivastava, Sahab Dass Collaboration; Vibha R Satsangi, Poonam Sharma Team

2013-03-01

Graphene has an excellent electronic conductivity, a high theoretical surface area of 2630 m2/g and excellent mechanical properties and, thus, is a promising component for high-performance electrode materials. Following this, GO has been used to modify the PEC response of photoactive material hematite thin films in PEC cell. A reduced graphene oxide/iron oxide (R-GO/Fe2O3) thin film structure has been successfully prepared on ITO by directly growing iron oxide particles on the thermally reduced graphene oxide sheets prepared from suspension of exfoliated graphene oxide. R-GO/Fe2O3 thin films were tested in PEC cell and offered ten times higher photocurrent density than pristine Fe2O3 thin film sample. XRD, SEM, EDS, UV-Vis, Mott-Schottky and Raman studies were carried out to study spectro-electrochemical properties. Enhanced PEC performance of these photoelectrodes was attributed to its porous morphology, improved conductivity upon favorable carrier transfer across the oxides interface.

Effect of Compressive Stresses on Leakage Currents in Microchip Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2012-01-01

Microchip tantalum capacitors are manufactured using new technologies that allow for production of small size capacitors (down to EIA case size 0402) with volumetric efficiency much greater than for regular chip capacitors. Due to a small size of the parts and leadless design they might be more sensitive to mechanical stresses that develop after soldering onto printed wiring boards (PWB) compared to standard chip capacitors. In this work, the effect of compressive stresses on leakage currents in capacitors has been investigated in the range of stresses up to 200 MPa. Significant, up to three orders of magnitude, variations of currents were observed after the stress exceeds a certain critical level that varied from 10 MPa to 180 MPa for capacitors used in this study. A stress-induced generation of electron traps in tantalum pentoxide dielectric is suggested to explain reversible variations of leakage currents in tantalum capacitors. Thermo-mechanical characteristics of microchip capacitors have been studied to estimate the level of stresses caused by assembly onto PWB and assess the risk of stress-related degradation and failures. Keywords: tantalum capacitors, leakage current, soldering, reliability, mechanical stress.

The preparation of tantalum powder using a MR-EMR combination process

NASA Astrophysics Data System (ADS)

Yoon, Jae Sik; Kim, Byung Il

2007-04-01

In the conventional metallothermic reduction (MR) process used to obtain tantalum powder in batch-type operation, it is difficult to control the morphology and location of the tantalum deposits. In contrast, an electronically mediated reaction (EMR) process is capable of overcoming this difficulty. It has the advantage of being a continuous process, but has the disadvantage of a poor reduction yield. A process known as the MR-EMR combination process is able to overcome the shortcomings of the MR and EMR processes. In this study, an MR-EMR combination process is applied to the production of tantalum powder via sodium reduction of K2TaF7. In the MR-EMR combination process, the total charge passed through an external circuit and the average particle size (FSSS) increase as the reduction temperature increases. In addition, the proportion of fine particles (-325 mesh) decreases as the reduction temperature increasess. The tantalum yield improved from 65 to 74% as the reduction temperature increased. Taking into account the charge, impurities, morphology, particle size and yield, a reduction temperature of 1123 K was found to be optimum for the MR-EMR combination process.

Oxidation-Resistant Coating For Bipolar Lead/Acid Battery

NASA Technical Reports Server (NTRS)

Bolstad, James J.

1993-01-01

Cathode side of bipolar substrate coated with nonoxidizable conductive layer. Coating prepared as water slurry of aqueous dispersion of polyethylene copolymer plus such conductive fillers as tin oxide, titanium, tantalum, or tungsten oxide. Applied easily to substrate of polyethylene carbon plastic. As slurry dries, conductive, oxidation-resistant coating forms on positive side of substrate.

Two-dimensional tantalum disulfide: controlling structure and properties via synthesis

NASA Astrophysics Data System (ADS)

Zhao, Rui; Grisafe, Benjamin; Krishna Ghosh, Ram; Holoviak, Stephen; Wang, Baoming; Wang, Ke; Briggs, Natalie; Haque, Aman; Datta, Suman; Robinson, Joshua

2018-04-01

Tantalum disulfide (TaS2) is a transition metal dichalcogenide (TMD) that exhibits phase transition induced electronic property modulation at low temperature. However, the appropriate phase must be grown to enable the semiconductor/metal transition that is of interest for next generation electronic applications. In this work, we demonstrate direct and controllable synthesis of ultra-thin 1T-TaS2 and 2H-TaS2 on a variety of substrates (sapphire, SiO2/Si, and graphene) via powder vapor deposition. The synthesis process leads to single crystal domains ranging from 20 to 200 nm thick and 1-10 µm on a side. The TaS2 phase (1T or 2H) is controlled by synthesis temperature, which subsequently is shown to control the electronic properties. Furthermore, this work constitutes the first demonstration of a metal-insulator phase transition in directly synthesized 1T-TaS2 films and domains by electronic means.

Reliability of High-Voltage Tantalum Capacitors. Parts 3 and 4)

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2010-01-01

Weibull grading test is a powerful technique that allows selection and reliability rating of solid tantalum capacitors for military and space applications. However, inaccuracies in the existing method and non-adequate acceleration factors can result in significant, up to three orders of magnitude, errors in the calculated failure rate of capacitors. This paper analyzes deficiencies of the existing technique and recommends more accurate method of calculations. A physical model presenting failures of tantalum capacitors as time-dependent-dielectric-breakdown is used to determine voltage and temperature acceleration factors and select adequate Weibull grading test conditions. This model is verified by highly accelerated life testing (HALT) at different temperature and voltage conditions for three types of solid chip tantalum capacitors. It is shown that parameters of the model and acceleration factors can be calculated using a general log-linear relationship for the characteristic life with two stress levels.

Self-activated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors

PubMed Central

Moon, Hi Gyu; Shim, Young-Soek; Kim, Do Hong; Jeong, Hu Young; Jeong, Myoungho; Jung, Joo Young; Han, Seung Min; Kim, Jong Kyu; Kim, Jin-Sang; Park, Hyung-Ho; Lee, Jong-Heun; Tuller, Harry L.; Yoon, Seok-Jin; Jang, Ho Won

2012-01-01

One of the top design priorities for semiconductor chemical sensors is developing simple, low-cost, sensitive and reliable sensors to be built in handheld devices. However, the need to implement heating elements in sensor devices, and the resulting high power consumption, remains a major obstacle for the realization of miniaturized and integrated chemoresistive thin film sensors based on metal oxides. Here we demonstrate structurally simple but extremely efficient all oxide chemoresistive sensors with ~90% transmittance at visible wavelengths. Highly effective self-activation in anisotropically self-assembled nanocolumnar tungsten oxide thin films on glass substrate with indium-tin oxide electrodes enables ultrahigh response to nitrogen dioxide and volatile organic compounds with detection limits down to parts per trillion levels and power consumption less than 0.2 microwatts. Beyond the sensing performance, high transparency at visible wavelengths creates opportunities for their use in transparent electronic circuitry and optoelectronic devices with avenues for further functional convergence. PMID:22905319

Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications

PubMed Central

Skuza, J. R.; Scott, D. W.; Mundle, R. M.; Pradhan, A. K.

2016-01-01

We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5–10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT. PMID:26884225

Development of a fused slurry silicide coating for the protection of tantalum alloys

NASA Technical Reports Server (NTRS)

Packer, C. M.; Perkins, R. A.

1974-01-01

Results are reported of a research program to develop a reliable high-performance, fused slurry silicide protective coating for a tantalum-10 tungsten alloy for use at 1427 to 1538 C at 0.1 to 10 torr air pressure under cyclic temperature conditions. A review of silicide coating performance under these conditions indicated that the primary wear-out mode is associated with widening of hairline fissures in the coating. Consideration has been given to modifying the oxidation products that form on the coating surface to provide a seal for these fissures and to minimize their widening. On the basis of an analysis of the phase relationships between silica and various other oxides, a coating having the slurry composition 2.5Mn-33Ti-64.5Si was developed that is effective in the pressure range from 1 to 10 torr.

Surface nanotexturing of tantalum by laser ablation in water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barmina, E V; Simakin, Aleksandr V; Shafeev, Georgii A

2009-01-31

Surface nanotexturing of tantalum by ablation with short laser pulses in water has been studied experimentally using three ablation sources: a neodymium laser with a pulse duration of 350 ps, an excimer laser (248 nm) with a pulse duration of 5 ps and a Ti:sapphire laser with a pulse duration of 180 fs. The morphology of the nanotextured surfaces has been examined using a nanoprofilometer and field emission scanning electron microscope. The results demonstrate that the average size of the hillocks produced on the target surface depends on the laser energy density and is {approx}200 nm at an energy densitymore » approaching the laser-melting threshold of tantalum and a pulse duration of 350 ps. Their surface density reaches 10{sup 6} cm{sup -2}. At a pulse duration of 5 ps, the average hillock size is 60-70 nm. Nanotexturing is accompanied by changes in the absorption spectrum of the tantalum surface in the UV and visible spectral regions. The possible mechanisms of surface nanotexturing and potential applications of this effect are discussed. (nanostructures)« less

Reactivity Control of Rhodium Cluster Ions by Alloying with Tantalum Atoms.

PubMed

Mafuné, Fumitaka; Tawaraya, Yuki; Kudoh, Satoshi

2016-02-18

Gas phase, bielement rhodium and tantalum clusters, RhnTam(+) (n + m = 6), were prepared by the double laser ablation of Rh and Ta rods in He carrier gas. The clusters were introduced into a reaction gas cell filled with nitric oxide (NO) diluted with He and were subjected to collisions with NO and He at room temperature. The product species were observed by mass spectrometry, demonstrating that the NO molecules were sequentially adsorbed on the RhnTam(+) clusters to form RhnTam(+)NxOx (x = 1, 2, 3, ...) species. In addition, oxide clusters, RhnTam(+)O2, were also observed, suggesting that the NO molecules were dissociatively adsorbed on the cluster, the N atoms migrated on the surface to form N2, and the N2 molecules were released from RhnTam(+)N2O2. The reactivity, leading to oxide formation, was composition dependent: oxide clusters were dominantly formed for the bielement clusters containing both Rh and Ta atoms, whereas such clusters were hardly formed for the single-element Rhn(+) and Tam(+) clusters. DFT calculations indicated that the Ta atoms induce dissociation of NO on the clusters by lowering the dissociation energy, whereas the Rh atoms enable release of N2 by lowering the binding energy of the N atoms on the clusters.

Tantalum protective coatings for fusion reactor applications

NASA Astrophysics Data System (ADS)

Brossa, Francesco; Piatti, Giovanni; Bardy, Michel

Tantalum has a very low sputtering yield, high melting point, low vapour pressure and good mechanical properties at low and high temperatures, so it is a very interesting candidate for the first wall and blanket structural components. Tantalum coatings overcome the problems of fabrication and joining bulk Ta, thus reducing also dead weight and cost. Ta coatings were produced by chemical vapour deposition and plasma spraying on four conventional structural materials: Al, Cu, AISI 316 L and Inconel 600. The conditions which improve adherence have been studied. The composition of the films was determined by chemical means and by X-ray analysis. Metallographie examination was employed to define the morphological structure of the deposits. The adherence of the coatings was determined by subjecting the samples to bend tests and to thermal shocks.

Effects of severe stressing on tantalum capacitors

NASA Technical Reports Server (NTRS)

Shakar, J. F.; Fairfield, E. H.

1981-01-01

The ultimate capabilities of an all tantalum capacitor were determined and evaluated. The evaluation included: 175 C life; 100 cycle thermal shock; 70 g random vibration; 3000 g shock; and 90 C ase ripple current.

Hysteresis-free high rate reactive sputtering of niobium oxide, tantalum oxide, and aluminum oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Särhammar, Erik, E-mail: erik.sarhammar@angstrom.uu.se; Berg, Sören; Nyberg, Tomas

2014-07-01

This work reports on experimental studies of reactive sputtering from targets consisting of a metal and its oxide. The composition of the targets varied from pure metal to pure oxide of Al, Ta, and Nb. This combines features from both the metal target and oxide target in reactive sputtering. If a certain relation between the metal and oxide parts is chosen, it may be possible to obtain a high deposition rate, due to the metal part, and a hysteresis-free process, due to the oxide part. The aim of this work is to quantify the achievable boost in oxide deposition ratemore » from a hysteresis-free process by using a target consisting of segments of a metal and its oxide. Such an increase has been previously demonstrated for Ti using a homogeneous substoichiometric target. The achievable gain in deposition rate depends on transformation mechanisms from oxide to suboxides due to preferential sputtering of oxygen. Such mechanisms are different for different materials and the achievable gain is therefore material dependent. For the investigated materials, the authors have demonstrated oxide deposition rates that are 1.5–10 times higher than what is possible from metal targets in compound mode. However, although the principle is demonstrated for oxides of Al, Ta, and Nb, a similar behavior is expected for most oxides.« less

Preparation of Zinc Oxide (ZnO) Thin Film as Transparent Conductive Oxide (TCO) from Zinc Complex Compound on Thin Film Solar Cells: A Study of O2 Effect on Annealing Process

NASA Astrophysics Data System (ADS)

Muslih, E. Y.; Kim, K. H.

2017-07-01

Zinc oxide (ZnO) thin film as a transparent conductive oxide (TCO) for thin film solar cell application was successfully prepared through two step preparations which consisted of deposition by spin coating at 2000 rpm for 10 second and followed by annealing at 500 °C for 2 hours under O2 and ambient atmosphere. Zinc acetate dehydrate was used as a precursor which dissolved in ethanol and acetone (1:1 mol) mixture in order to make a zinc complex compound. In this work, we reported the O2 effect, reaction mechanism, structure, morphology, optical and electrical properties. ZnO thin film in this work shows a single phase of wurtzite, with n-type semiconductor and has band gap, carrier concentration, mobility, and resistivity as 3.18 eV, 1.21 × 10-19cm3, 11 cm2/Vs, 2.35 × 10-3 Ωcm respectively which is suitable for TCO at thin film solar cell.

Random Vibration Testing of Advanced Wet Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2015-01-01

Advanced wet tantalum capacitors allow for improved performance of power supply systems along with substantial reduction of size and weight of the systems that is especially beneficial for space electronics. Due to launch-related stresses, acceptance testing of all space systems includes random vibration test (RVT). However, many types of advanced wet tantalum capacitors cannot pass consistently RVT at conditions specified in MIL-PRF-39006, which impedes their use in space projects. This requires a closer look at the existing requirements, modes and mechanisms of failures, specifics of test conditions, and acceptance criteria. In this work, different lots of advanced wet tantalum capacitors from four manufacturers have been tested at step stress random vibration conditions while their currents were monitored before, during, and after the testing. It has been shown that the robustness of the parts and their reliability are mostly due to effective self-healing processes and limited current spiking or minor scintillations caused by RVT do not increase the risk of failures during operation. A simple model for scintillations events has been used to simulate current spiking during RVT and optimize test conditions. The significance of scintillations and possible effects of gas generation have been discussed and test acceptance criteria for limited current spiking have been suggested.

Electronic Devices Based on Oxide Thin Films Fabricated by Fiber-to-Film Process.

PubMed

Meng, You; Liu, Ao; Guo, Zidong; Liu, Guoxia; Shin, Byoungchul; Noh, Yong-Young; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

2018-05-30

Technical development for thin-film fabrication is essential for emerging metal-oxide (MO) electronics. Although impressive progress has been achieved in fabricating MO thin films, the challenges still remain. Here, we report a versatile and general thermal-induced nanomelting technique for fabricating MO thin films from the fiber networks, briefly called fiber-to-film (FTF) process. The high quality of the FTF-processed MO thin films was confirmed by various investigations. The FTF process is generally applicable to numerous technologically relevant MO thin films, including semiconducting thin films (e.g., In 2 O 3 , InZnO, and InZrZnO), conducting thin films (e.g., InSnO), and insulating thin films (e.g., AlO x ). By optimizing the fabrication process, In 2 O 3 /AlO x thin-film transistors (TFTs) were successfully integrated by fully FTF processes. High-performance TFT was achieved with an average mobility of ∼25 cm 2 /(Vs), an on/off current ratio of ∼10 7 , a threshold voltage of ∼1 V, and a device yield of 100%. As a proof of concept, one-transistor-driven pixel circuit was constructed, which exhibited high controllability over the light-emitting diodes. Logic gates based on fully FTF-processed In 2 O 3 /AlO x TFTs were further realized, which exhibited good dynamic logic responses and voltage amplification by a factor of ∼4. The FTF technique presented here offers great potential in large-area and low-cost manufacturing for flexible oxide electronics.

Fabrication and characterization of lithographically patterned and optically transparent anodic aluminum Oxide (AAO) nanostructure thin film.

PubMed

He, Yuan; Li, Xiang; Que, Long

2012-10-01

Optically transparent anodic aluminum oxide (AAO) nanostructure thin film has been successfully fabricated from lithographically patterned aluminum on indium tin oxide (ITO) glass substrates for the first time, indicating the feasibility to integrate the AAO nanostructures with microdevices or microfluidics for a variety of applications. Both one-step and two-step anodization processes using sulfuric acid and oxalic acid have been utilized for fabricating the AAO nanostructure thin film. The optical properties of the fabricated AAO nanostructure thin film have been evaluated and analyzed.

Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors.

PubMed

Xu, Wangying; Li, Hao; Xu, Jian-Bin; Wang, Lei

2018-03-06

Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the most promising transistor technologies for future large-area flexible electronics. This review surveys the recent advances in solution-based oxide TFTs, including n-type oxide semiconductors, oxide dielectrics and p-type oxide semiconductors. Firstly, we provide an introduction on oxide TFTs and the TFT configurations and operating principles. Secondly, we present the recent progress in solution-processed n-type transistors, with a special focus on low-temperature and large-area solution processed approaches as well as novel non-display applications. Thirdly, we give a detailed analysis of the state-of-the-art solution-processed oxide dielectrics for low-voltage electronics. Fourthly, we discuss the recent progress in solution-based p-type oxide semiconductors, which will enable the highly desirable future low-cost large-area complementary circuits. Finally, we draw the conclusions and outline the perspectives over the research field.

Guidelines for the selection and application of tantalum electrolytic capacitors in highly reliable equipment

NASA Technical Reports Server (NTRS)

Holladay, A. M.

1978-01-01

Guidelines are given for the selection and application of three types of tantalum electrolytic capacitors in current use in the design of electrical and electronic circuits for space flight missions. In addition, the guidelines supplement requirements of existing military specifications used in the procurement of capacitors. A need exists for these guidelines to assist designers in preventing some of the recurring, serious problems experienced with tantalum electrolytic capacitors in the recent past. The three types of capacitors covered by these guidelines are; solid, wet foil, and tantalum cased wet slug.

Electronic transitions of tantalum monofluoride

NASA Astrophysics Data System (ADS)

Ng, K. F.; Zou, Wenli; Liu, Wenjian; Cheung, A. S.-C.

2017-03-01

The electronic transition spectrum of the tantalum monofluoride (TaF) molecule in the spectral region between 448 and 560 nm has been studied using the technique of laser-ablation/reaction free jet expansion and laser induced fluorescence spectroscopy. The TaF molecule was produced by reacting laser-ablated tantalum atoms with sulfur hexafluoride gas seeded in argon. Twenty-two vibrational bands with resolved rotational structure have been recorded and analyzed, which were organized into seven electronic transitions. The X3Σ-(0+) state has been identified to be the ground state and the determined equilibrium bond length, re, and vibrational frequency, ωe, are 1.8184 Å and 700.1 cm-1, respectively. The low-lying Λ-S states and Ω sub-states of TaF were also theoretically studied at the MRCISD+Q level of theory with spin-orbit coupling. The Ω = 0+ and 2 sub-states from the -3Σ and 3Φ state have been found to be the ground and the first excited states, respectively, which agrees well with our experimental determinations. This work represents the first experimental investigation of the molecular structure of the TaF molecule.

Local Anodic Oxidation of Thin GeO Films and Formation of Nanostructures Based on Them

NASA Astrophysics Data System (ADS)

Astankova, K. N.; Kozhukhov, A. S.; Azarov, I. A.; Gorokhov, E. B.; Sheglov, D. V.; Latyshev, A. V.

2018-04-01

The process of local anodic oxidation of thin GeO films has been studied using an atomic force microscope. The electron-probe microanalysis showed that oxidized areas of a GeO film were germanium dioxide. The effect of the voltage pulse duration applied to the probe-substrate system and the atmospheric humidity on the height of the oxide structures has been studied. The kinetics of the local anodic oxidation (LAO) in a semi-contact mode obeys the Cabrera-Mott model for large times. The initial growth rate of the oxide ( R 0) significantly increases and the time of starting the oxidation ( t 0) decreases as the atmospheric humidity increases by 20%, which is related to an increase in the concentration of oxygen-containing ions at the surface of the oxidized GeO film. It was shown that nanostructures in thin GeO layers can be formed by the LAO method.

Multi-physics transient simulation of monolithic niobium dioxide-tantalum dioxide memristor-selector structures

NASA Astrophysics Data System (ADS)

Sevic, John F.; Kobayashi, Nobuhiko P.

2017-10-01

Self-assembled niobium dioxide (NbO2) thin-film selectors self-aligned to tantalum dioxide (TaO2) memristive memory cells are studied by a multi-physics transient solution of the heat equation coupled to the nonlinear current continuity equation. While a compact model can resolve the quasi-static bulk negative differential resistance (NDR), a self-consistent coupled transport formulation provides a non-equilibrium picture of NbO2-TaO2 selector-memristor operation ab initio. By employing the drift-diffusion transport approximation, a finite element method is used to study the dynamic electrothermal behavior of our experimentally obtained selector-memristor devices, showing that existing conditions are suitable for electroformation of NbO2 selector thin-films. Both transient and steady-state simulations support our theory, suggesting that the phase change due to insulator-metal transition is responsible for NbO2 selector NDR in our as-fabricated selector-memristor devices. Simulation results further suggest that TiN nano-via may play a central role in electroforming, as its dimensions and material properties establish the mutual electrothermal interaction between TiN nano-via and the selector-memristor.

Electrical and Infrared Optical Properties of Vanadium Oxide Semiconducting Thin-Film Thermometers

NASA Astrophysics Data System (ADS)

Zia, Muhammad Fakhar; Abdel-Rahman, Mohamed; Alduraibi, Mohammad; Ilahi, Bouraoui; Awad, Ehab; Majzoub, Sohaib

2017-10-01

A synthesis method has been developed for preparation of vanadium oxide thermometer thin film for microbolometer application. The structure presented is a 95-nm thin film prepared by sputter-depositing nine alternating multilayer thin films of vanadium pentoxide (V2O5) with thickness of 15 nm and vanadium with thickness of 5 nm followed by postdeposition annealing at 300°C in nitrogen (N2) and oxygen (O2) atmospheres. The resulting vanadium oxide (V x O y ) thermometer thin films exhibited temperature coefficient of resistance (TCR) of -3.55%/°C with room-temperature resistivity of 2.68 Ω cm for structures annealed in N2 atmosphere, and TCR of -3.06%/°C with room-temperature resistivity of 0.84 Ω cm for structures annealed in O2 atmosphere. Furthermore, optical measurements of N2- and O2-annealed samples were performed by Fourier-transform infrared ellipsometry to determine their dispersion curves, refractive index ( n), and extinction coefficient ( k) at wavelength from 7000 nm to 14,000 nm. The results indicate the possibility of applying the developed materials in thermometers for microbolometers.

Photon synthesis of iron oxide thin films for thermo-photo-chemical sensors

NASA Astrophysics Data System (ADS)

Mulenko, S. A.; Petrov, Yu. N.; Gorbachuk, N. T.

2012-09-01

Ultraviolet photons of KrF-laser (248 nm) and of photodiode (360 nm) were used for the synthesis of iron oxide thin films with variable thickness, stoichiometry and electrical properties. The reactive pulsed laser deposition (RPLD) method was based on KrF-laser and photon-induced chemical vapor deposition (PCVD) was based on a photodiode. Deposited films demonstrated semiconductor properties with variable band gap (Eg). The film thickness (50-140 nm) and Eg depended on the laser pulse number, oxygen and iron carbonyl vapor pressure in the deposition chamber, and exposure time to the substrate surface with ultraviolet (UV) radiation. Sensing characteristics strongly depended on electrical and structural properties of such thin films. Iron oxide films were deposited on <1 0 0> Si substrate and had large thermo electromotive force (e.m.f.) coefficient (S) and high photosensitivity (F). The largest value of the S coefficient obtained by RPLD was about 1.65 mV/K in the range 270-290 K and by PCVD was about 1.5 mV/K in the range 280-322 K. The largest value F obtained by RPLD and PCVD was about 44 Vc/W and 40 Vc/W, accordingly, for white light at power density (I ≅ 0.006 W/cm2). It was shown that the S coefficient and F strongly depended on Eg. Moreover, these films were tested as chemical sensors: the largest sensitivity of NO molecules was at the level of 3 × 1012 cm-3. Our results showed that RPLD and PCVD were used to synthesize semiconductor iron oxide thin films with different sensing properties. So iron oxide thin films synthesized by UV photons are up-to-date materials for multi-parameter sensors: thermo-photo-chemical sensors operating at moderate temperature.

Performance and Reliability of Solid Tantalum Capacitors at Cryogenic Conditions

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2006-01-01

Performance of different types of solid tantalum capacitors was evaluated at room and low temperatures, down to 15 K. The effect of temperature on frequency dependencies of capacitance, effective series resistances (ESR), leakage currents, and breakdown voltages has been investigated and analyzed. To assess thermo-mechanical robustness of the parts, several groups of loose capacitors and those soldered on FR4 boards were subjected to multiple (up to 500) temperature cycles between room temperature and 77 K. Experiments and mathematical modeling have shown that degradation in tantalum capacitors at low temperatures is mostly due to increasing resistance of the manganese cathode layer, resulting in substantial decrease of the roll-off frequency. Absorption currents follow a power law, I approximately t(sup -m), with the exponent m varying from 0.8 to 1.1. These currents do not change significantly at cryogenic conditions and the value of the exponent remains the same down to 15 K. Variations of leakage currents with voltage can be described by Pool-Frenkel and Schottky mechanisms of conductivity, with the Schottky mechanism prevailing at cryogenic conditions. Breakdown voltages of tantalum capacitors increase and the probability of scintillations decreases at cryogenic temperatures. However, breakdown voltages measured during surge current testing decrease at liquid nitrogen (LN) compared to room-temperature conditions. Results of temperature cycling suggest that tantalum capacitors are capable of withstanding multiple exposures to cryogenic conditions, but the probability of failures varies for different part types.

Thin-film transistors with a graphene oxide nanocomposite channel.

PubMed

Jilani, S Mahaboob; Gamot, Tanesh D; Banerji, P

2012-12-04

Graphene oxide (GO) and graphene oxide-zinc oxide nanocomposites (GO-ZnO) were used as channel materials on SiO(2)/Si to fabricate thin-film transistors (TFT) with an aluminum source and drain. Pure GO-based TFT showed poor field-effect characteristics. However, GO-ZnO-nanocomposite-based TFT showed better field-effect performance because of the anchoring of ZnO nanostructures in the GO matrix, which causes a partial reduction in GO as is found from X-ray photoelectron spectroscopic data. The field-effect mobility of charge carriers at a drain voltage of 1 V was found to be 1.94 cm(2)/(V s). The transport of charge carriers in GO-ZnO was explained by a fluctuation-induced tunneling mechanism.

A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

NASA Astrophysics Data System (ADS)

Adelifard, Mehdi; Darudi, Hosein

2016-07-01

There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

A preliminary deposit model for lithium-cesium-tantalum (LCT) pegmatites

USGS Publications Warehouse

Bradley, Dwight; McCauley, Andrew

2013-01-01

This report is part of an effort by the U.S. Geological Survey to update existing mineral deposit models and to develop new ones. We emphasize practical aspects of pegmatite geology that might directly or indirectly help in exploration for lithium-cesium-tantalum (LCT) pegmatites, or for assessing regions for pegmatite-related mineral resource potential. These deposits are an important link in the world’s supply chain of rare and strategic elements, accounting for about one-third of world lithium production, most of the tantalum, and all of the cesium.

Investigation of Annealing Temperature on Copper Oxide Thin Films Using Sol-Gel Spin Coating Technique

NASA Astrophysics Data System (ADS)

Hashim, H.; Samat, S. F. A.; Shariffudin, S. S.; Saad, P. S. M.

2018-03-01

Copper (II) Oxide or cupric oxide (CuO) is one of the well-known materials studied for thin films applications. This paper was studied on the effect of annealing temperature to CuO thin films using sol-gel method and spin coating technique. The solution was prepared by sol-gel method and the thin films were synthesized at various temperatures from 500°C to 700°C that deposited onto the quartz substrates. After the annealing process, the thin films were uniform and brownish black in colour. The measurements were performed by atomic force microscopy (AFM), surface profiler (SP), two-point probe and Ultraviolet-visible (UV-Vis-NIR) spectrometer. From the optical measurement, the band gap was estimated to be 1.44eV for sample annealed at 550°C.

Crystal Structure Characterization of Thin Layer Zinc Oxide

NASA Astrophysics Data System (ADS)

Doyan, Aris; Susilawati; Azizatul Fitri, Siti; Ahzan, Sukainil

2017-05-01

In this research the characterization of the crystal structure of a thin layer of ZnO (zinc oxide) were synthesized by sol - gel method and spin coating deposited on a glass substrate. The samples were divided into three sol concentrations of 0.1, 0.3, 0.5 Molar and two deposition temperature is 350 °C, and 550 °C. UV-Vis. spectrophotometer results showed that in the spectrum of visible light (wavelength range 300-800 nm) has a transmittance value of which increases with increasing concentration and temperature deposition of zinc oxide, otherwise the value of the absorption and the band gap energy decreases with the addition of concentration and deposition temperature. The transmittances value of the highest and lowest absorption was 93.5% and 0.03 is at a concentration of 0.1 M and zinc oxide deposition temperature of 550 °C, with a value of band gap energy of 2.98 eV. The XRD results showed that the zinc oxide crystal orientation in the field of 013 with a crystal grain size 14.4472 nm. SEM results showed the surface morphology of zinc oxide such as rod-like.

Alkali-resistant low-temperature atomic-layer-deposited oxides for optical fiber sensor overlays

NASA Astrophysics Data System (ADS)

Kosiel, K.; Dominik, M.; Ściślewska, I.; Kalisz, M.; Guziewicz, M.; Gołaszewska, K.; Niedziółka-Jonsson, J.; Bock, W. J.; Śmietana, M.

2018-04-01

This paper presents an investigation of properties of selected metallic oxides deposited at a low temperature (100 °C) by atomic layer deposition (ALD) technique, relating to their applicability as thin overlays for optical fiber sensors resistant in alkaline environments. Hafnium oxide (Hf x O y with y/x approx. 2.70), tantalum oxide (Ta x O y with y/x approx. 2.75) and zirconium oxide (Zr x O y with y/x approx. 2.07), which deposition was based, respectively, on tetrakis(ethylmethyl)hafnium, tantalum pentachloride and tetrakis(ethylmethyl)zirconium with deionized water, were tested as thin layers on planar Si (100) and glass substrates. Growth per cycle (GPC) in the ALD processes was 0.133-0.150 nm/cycle. Run-to-run GPC reproducibility of the ALD processes was best for Hf x O y (0.145 ± 0.001 nm/cycle) and the poorest for Ta x O y (0.133 ± 0.003 nm/cycle). Refractive indices n of the layers were 2.00-2.10 (at the wavelength λ = 632 nm), with negligible k value (at λ for 240-930 nm). The oxides examined by x-ray diffractometry proved to be amorphous, with only small addition of crystalline phases for the Zr x O y . The surfaces of the oxides had grainy but smooth topographies with root-mean square roughness ˜0.5 nm (at 10 × 10 μm2 area) according to atomic force microscopy. Ellipsometric measurements, by contrast, suggest rougher surfaces for the Zr x O y layers. The surfaces were also slightly rougher on the glass-based samples than on the Si-based ones. Nanohardness and Young modules were 4.90-8.64 GPa and 83.7-104.4 GPa, respectively. The tests of scratch resistance revealed better tribological properties for the Hf x O y and the Ta x O y than for the Zr x O y . The surfaces were hydrophilic, with wetting angles of 52.5°-62.9°. The planar oxides on Si, being resistive even to concentrated alkali (pH 14), proved to be significantly more alkali-resistive than Al2O3. The Ta x O y overlay was deposited on long-period grating sensor induced in optical

Electro-optical properties of the metal oxide-carbon thin film system of CdO-LCC

NASA Astrophysics Data System (ADS)

Kokshina, A. V.; Smirnov, A. V.; Razina, A. G.

2016-08-01

This article presents the results of a study electrical and optical properties of the thin film system of CdO-LCC. Cadmium oxide films were obtained by method of thermal oxidation. CdO-LCC thin film system was produced by applying on a CdO film a linear chain carbon film in thickness of 100 nm using the ion-plasma method, after which the obtained system was annealed. The studies showed that the obtained CdO-LCC films are quite transparent in the visible region; it has polycrystalline structure, thickness around 300 nm, the band gap to 2.3 eV. The obtained thin film system has photosensitive properties.

Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

NASA Astrophysics Data System (ADS)

Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

2018-05-01

The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

Deformation of Cases in High Capacitance Value Wet Tantalum Capacitors under Environmental Stresses

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2016-01-01

Internal gas pressure in hermetic wet tantalum capacitors is created by air, electrolyte vapor, and gas generated by electrochemical reactions at the electrodes. This pressure increases substantially with temperature and time of operation due to excessive leakage currents. Deformation of the case occurs when the internal pressure exceeds pressure of the environments and can raise significantly when a part operates in space. Contrary to the cylinder case wet tantalum capacitors that have external sealing by welding and internal sealing provided by the Teflon bushing and crimping of the case, no reliable internal sealing exists in the button case capacitors. Single seal design capacitors are used for high capacitance value wet tantalum capacitors manufactured per DLA L&M drawings #04003, 04005, and 10011, and require additional analysis to assure their reliable application in space systems. In this work, leakage currents and case deformation of button case capacitors were measured during different environmental test conditions. Recommendations for derating, screening and qualification testing are given. This work is a continuation of a series of NEPP reports related to quality and reliability of wet tantalum capacitors.

Development of porous metal oxide thin films by co-evaporation

NASA Astrophysics Data System (ADS)

Tesfamichael, T.; Motta, Nunzio; Bostrom, Thor; Bell, J. M.

2007-03-01

This paper focuses on the development of mixed metal oxide thin films and physical characterization of the films. The films were produced by co-evaporation of titanium oxide and tungsten oxide powders. This allowed the development of titanium oxide-tungsten oxide films as analyzed using XPS. Examination in the SEM and AFM showed that the films were nanoporous with the pore size and pore orientation varying as a function of the deposition angle. UV-vis spectra of the films show an increase of transmittance with increasing deposition angle which is attributed to the structure and porosity of the films. Raman analysis indicated that the as-deposited films have broad and weak Raman characteristics, attributed to the nanocrystal nature of the films and the presence of defects, and the peak broadening deceases after annealing the film, as expected.

Sputtered boron indium oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Stewart, Kevin A.; Gouliouk, Vasily; Keszler, Douglas A.; Wager, John F.

2017-11-01

Boron indium oxide (BIO) is studied for thin-film transistor (TFT) channel layer applications. Sputtered BIO thin films exhibit an amorphous phase over a wide range of B2O3/In2O3 ratios and remain amorphous up to 500 °C. The band gap decreases linearly with decreasing boron content, whereas device performance generally improves with decreasing boron content. The best amorphous BIO TFT exhibits a field-effect mobility of 10 cm2 V-1 s-1, turn-on voltage of 2.5 V, and sub-threshold swing of 0.72 V/dec. Decreasing the boron content to 12.5% leads to a polycrystalline phase, but further increases the mobility up to 20-40 cm2 V-1 s-1. TCAD simulation results suggest that the reason for higher performance after increasing the anneal temperature from 200 to 400 °C is due to a lower defect density in the sub-bandgap region of the BIO channel layer.

Hydrogen gas sensors using a thin Ta2O5 dielectric film

NASA Astrophysics Data System (ADS)

Kim, Seongjeen

2014-12-01

A capacitive-type hydrogen gas sensor with a MIS (metal-insulator-semiconductor) structure was investigated for high-temperature applications. In this work, a tantalum oxide (Ta2O5) layer of tens of nanometers in thickness formed by oxidizing tantalum film in rapid thermal processing (RTP) was exploited with the purpose of sensitivity improvement. Silicon carbide (SiC), which is good even at high temperatures over 500 °C, was used as the substrate. We fabricated sensors composed of Pd/Ta2O5/SiC, and the dependences of the capacitance response properties and the I-V characteristics on the hydrogen concentration were analyzed from the temperature range of room temperature to 500 °C. As a result, our hydrogen sensor showed promising performance with respect to the sensitivity and the adaptability at high temperature.

Superconducting characteristics in purified tantalum-foils

NASA Astrophysics Data System (ADS)

Hu, Qinghua; Wang, Zhihe

2018-07-01

We have conducted extensive investigations on the electrical transport and magnetization on a purified tantalum foil with extremely sharp resistive transition (transition width ΔTc < 0.02 K) at 0 T and residual resistivity ratio ρ290K/ρ5K= 16.75. Many effects, such as anisotropic field-induced resistive broadening and second peak of the magnetization-hysteresis loop, are observed in the sample. The maximum upper critical field determined by criteria of R/Rn = 0.9 is about 1.08 T rather weak compared to that in cuprate and/or iron-based superconductors. Although the value of upper critical field Hc2(0) and the field dependence of effective pinning energy U show that the flux pinning potential is weaker, the critical current density Jc(2 K, 0 T) = 1.145 × 105 A/cm2 and the effect of second peak indicate that there should be higher collective vortex pinning potential in the tantalum foil. The carriers are dominated by holes with the density n = 6.6 × 1022/cm3.

Comprehensive review on the development of high mobility in oxide thin film transistors

NASA Astrophysics Data System (ADS)

Choi, Jun Young; Lee, Sang Yeol

2017-11-01

Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for flat panel display (FPD), active matrix organic light emitting display (AMOLED) and active matrix liquid crystal display (AMLCD) due to their excellent electrical characteristics, such as field effect mobility ( μ FE ), subthreshold swing (S.S) and threshold voltage ( V th ). Covalent semiconductor like amorphous silicon (a-Si) is attributed to the anti-bonding and bonding states of Si hybridized orbitals. However, AOSs have not grain boundary and excellent performances originated from the unique characteristics of AOS which is the direct orbital overlap between s orbitals of neighboring metal cations. High mobility oxide TFTs have gained attractive attention during the last few years and today in display industries. It is progressively developed to increase the mobility either by exploring various oxide semiconductors or by adopting new TFT structures. Mobility of oxide thin film transistor has been rapidly increased from single digit to higher than 100 cm2/V·s in a decade. In this review, we discuss on the comprehensive review on the mobility of oxide TFTs in a decade and propose bandgap engineering and novel structure to enhance the electrical characteristics of oxide TFTs.

Catalytic Hydroamination of Alkynes and Norbornene with Neutral and Cationic Tantalum Imido Complexes

PubMed Central

Anderson, Laura L.; Arnold, John; Bergman, Robert G.

2005-01-01

Several tantalum imido complexes have been synthesized and shown to efficiently catalyze the hydroamination of internal and terminal alkynes. An unusual hydroamination/hydroarylation reaction of norbornene catalyzed by a highly electrophilic cationic tantalum imido complex is also reported. Factors affecting catalyst activity and selectivity are discussed along with mechanistic insights gained from stoichiometric reactions. PMID:15255680

Characterization of Tantalum Polymer Capacitors

NASA Technical Reports Server (NTRS)

Spence, Penelope

2012-01-01

Overview Reviewed data Caution must be taken when accelerating test conditions Data not useful to establish an acceleration model Introduction of new failure mechanism skewing results Evidence of Anti-Wear-Out De-doping of polymer Decreased capacitance Increased ESR Not dielectric breakdown Needs further investigation Further investigation into tantalum polymer capacitor technology Promising acceleration model for Manufacturer A Possibility for use in high-reliability space applications with suitable voltage derating.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

NASA Astrophysics Data System (ADS)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

PubMed

Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

2016-02-01

Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

Physically-based strength model of tantalum incorporating effects of temperature, strain rate and pressure

DOE PAGES

Lim, Hojun; Battaile, Corbett C.; Brown, Justin L.; ...

2016-06-14

In this work, we develop a tantalum strength model that incorporates e ects of temperature, strain rate and pressure. Dislocation kink-pair theory is used to incorporate temperature and strain rate e ects while the pressure dependent yield is obtained through the pressure dependent shear modulus. Material constants used in the model are parameterized from tantalum single crystal tests and polycrystalline ramp compression experiments. It is shown that the proposed strength model agrees well with the temperature and strain rate dependent yield obtained from polycrystalline tantalum experiments. Furthermore, the model accurately reproduces the pressure dependent yield stresses up to 250 GPa.more » The proposed strength model is then used to conduct simulations of a Taylor cylinder impact test and validated with experiments. This approach provides a physically-based multi-scale strength model that is able to predict the plastic deformation of polycrystalline tantalum through a wide range of temperature, strain and pressure regimes.« less

Vacuum pyrolysis characteristics and parameter optimization of recycling organic materials from waste tantalum capacitors.

PubMed

Chen, Zhenyang; Niu, Bo; Zhang, Lingen; Xu, Zhenming

2018-01-15

Recycling rare metal tantalum from waste tantalum capacitors (WTCs) is significant to alleviate the shortage of tantalum resource. However, environmental problems will be caused if the organic materials from WTCs are improperly disposed. This study presented a promising vacuum pyrolysis technology to recycle the organic materials from WTCs. The organics removal rate could reach 94.32wt% according to TG results. The optimal parameters were determined as 425°C, 50Pa and 30min on the basis of response surface methodology (RSM). The oil yield and residual rate was 18.09wt% and 74.94wt%, respectively. All pyrolysis products can be recycled through a reasonable route. Besides, to deeply understand the pyrolysis process, the pyrolysis mechanism was also proposed based on the product and free radical theory. This paper provides an efficient process for recycling the organic material from WTCs, which can facilitate the following tantalum recovery. Copyright © 2017 Elsevier B.V. All rights reserved.

Mixed oxide solid solutions

DOEpatents

Magno, Scott; Wang, Ruiping; Derouane, Eric

2003-01-01

The present invention is a mixed oxide solid solution containing a tetravalent and a pentavalent cation that can be used as a support for a metal combustion catalyst. The invention is furthermore a combustion catalyst containing the mixed oxide solid solution and a method of making the mixed oxide solid solution. The tetravalent cation is zirconium(+4), hafnium(+4) or thorium(+4). In one embodiment, the pentavalent cation is tantalum(+5), niobium(+5) or bismuth(+5). Mixed oxide solid solutions of the present invention exhibit enhanced thermal stability, maintaining relatively high surface areas at high temperatures in the presence of water vapor.

The effect of Mg dopants on magnetic and structural properties of iron oxide and zinc ferrite thin films

NASA Astrophysics Data System (ADS)

Saritaş, Sevda; Ceviz Sakar, Betul; Kundakci, Mutlu; Yildirim, Muhammet

2018-06-01

Iron oxide thin films have been obtained significant interest as a material that put forwards applications in photovoltaics, gas sensors, biosensors, optoelectronic and especially in spintronics. Iron oxide is one of the considerable interest due to its chemical and thermal stability. Metallic ion dopant influenced superexchange interactions and thus changed the structural, electrical and magnetic properties of the thin film. Mg dopped zinc ferrite (Mg:ZnxFe3-xO4) crystal was used to avoid the damage of Fe3O4 (magnetite) crystal instead of Zn2+ in this study. Because the radius of the Mg2+ ion in the A-site (tetrahedral) is almost equal to that of the replaced Fe3+ ion. Inverse-spinel structure in which oxygen ions (O2-) are arranged to form a face-centered cubic (FCC) lattice where there are two kinds of sublattices, namely, A-site and B-site (octahedral) interstitial sites and in which the super exchange interactions occur. In this study, to increase the saturation of magnetization (Ms) value for iron oxide, inverse-spinal ferrite materials have been prepared, in which the iron oxide was doped by multifarious divalent metallic elements including Zn and Mg. Triple and quaternary; iron oxide and zinc ferrite thin films with Mg metal dopants were grown by using Spray Pyrolysis (SP) technique. The structural, electrical and magnetic properties of Mg dopped iron oxide (Fe2O3) and zinc ferrite (ZnxFe3-xO4) thin films have been investigated. Vibrating Sample Magnetometer (VSM) technique was used to study for the magnetic properties. As a result, we can say that Mg dopped iron oxide thin film has huge diamagnetic and of Mg dopped zinc ferrite thin film has paramagnetic property at bigger magnetic field.

Chemically derived graphene oxide: towards large-area thin-film electronics and optoelectronics.

PubMed

Eda, Goki; Chhowalla, Manish

2010-06-11

Chemically derived graphene oxide (GO) possesses a unique set of properties arising from oxygen functional groups that are introduced during chemical exfoliation of graphite. Large-area thin-film deposition of GO, enabled by its solubility in a variety of solvents, offers a route towards GO-based thin-film electronics and optoelectronics. The electrical and optical properties of GO are strongly dependent on its chemical and atomic structure and are tunable over a wide range via chemical engineering. In this Review, the fundamental structure and properties of GO-based thin films are discussed in relation to their potential applications in electronics and optoelectronics.

Synthesis and characterization of lithium intercalation electrodes based on iron oxide thin films

NASA Astrophysics Data System (ADS)

Sarradin, J.; Guessous, A.; Ribes, M.

Sputter-deposited iron oxide thin films are investigated as a possible negative electrode for rocking-chair microbatteries. Experimental conditions related to the manufacturing of amorphous thin films suitable to a large number of available intercalation sites are described. Structural and physical properties of the thin layer films are presented. The conductivities of the amorphous thin films were found to be very high compared with those of the respective crystalline forms. Regarding the electrochemical behaviour, Fe 2O 3-based thin films electrodes are able to store and reversibly exchange lithium ions. At a C/2 charge/discharge rate with 100% depth-of-discharge (DOD), the specific capacity of these amorphous thin film electrodes remains almost constant and close to 330 Ah/kg after more than 120 charge/discharge cycles.

Temperature and field-dependent transport measurements in continuously tunable tantalum oxide memristors expose the dominant state variable

NASA Astrophysics Data System (ADS)

Graves, Catherine E.; Dávila, Noraica; Merced-Grafals, Emmanuelle J.; Lam, Si-Ty; Strachan, John Paul; Williams, R. Stanley

2017-03-01

Applications of memristor devices are quickly moving beyond computer memory to areas of analog and neuromorphic computation. These applications require the design of devices with different characteristics from binary memory, such as a large tunable range of conductance. A complete understanding of the conduction mechanisms and their corresponding state variable(s) is crucial for optimizing performance and designs in these applications. Here we present measurements of low bias I-V characteristics of 6 states in a Ta/ tantalum-oxide (TaOx)/Pt memristor spanning over 2 orders of magnitude in conductance and temperatures from 100 K to 500 K. Our measurements show that the 300 K device conduction is dominated by a temperature-insensitive current that varies with non-volatile memristor state, with an additional leakage contribution from a thermally-activated current channel that is nearly independent of the memristor state. We interpret these results with a parallel conduction model of Mott hopping and Schottky emission channels, fitting the voltage and temperature dependent experimental data for all memristor states with only two free parameters. The memristor conductance is linearly correlated with N, the density of electrons near EF participating in the Mott hopping conduction, revealing N to be the dominant state variable for low bias conduction in this system. Finally, we show that the Mott hopping sites can be ascribed to oxygen vacancies, where the local oxygen vacancy density responsible for critical hopping pathways controls the memristor conductance.

[Short-term curative effects of Tantalum rod treatment in early avascular necrosis].

PubMed

Ye, Fu-Sheng; Ni, Zhe-Ji; Chu, Xiao-Bing; He, Bang-Jian; Li, Ju; Tong, Pei-Jian

2013-08-01

To explore the recent clinical curative effect of Tantalum rod in treating the early avascular necrosis. From January 2008 to November 2008, the 25 patients (39 hips) with early avascular necrosis accepted tantalum rod placement and included 9 males (11 hips) and 16 females (28 hips) with an average age of 37 years old ranging from 18 to 74 years old. Four patients (6 hips) caused by Alcoholic, 6 patients (8 hips) by hormone, 2 cases (2 hips) by traumatic, 13 cases (23 hips) by idiopathic. Steinberg preoperative stage involved 7 hips in period I, 24 hips in period II, 8 hips in period III. Curative effect analysis included preoperative and postoperative Harris score, radiographic changes and hip replacement for follow-up to accept the end of the femoral head survival rate. All patients were followed up for 6 to 47 months (averaged 37.4 months). All 12 hips imaging appeard progress,including tantalum rod exit in 1 hip, hip hemiarthroplasty collapse in 3 hips, the area increased to avascular necrosis in 8 hips. Six hips accepted total hip replacement, including imaging progress in 5 hips (41.7%, 5/12), no imaging progress in 1 hip (3.7%,1/27). All hips' Kaplan-Meier survival curves showed 6-month survival rate was (97.4 +/- 2.5)% after tantalum stick insertion, 1-year survival rate was (94.7 +/- 3.6), and 2-year survival rate was (88.6 +/- 5.4)%, 3-year survival rate was (72.5 +/- 11.2). It is effective for treatment of avascular necrosis of femoral head in Steinberg I and II by Tantalum rod, and it can effectively relieve femoral head replacement time.

Synthesis and characterization of cobalt doped nickel oxide thin films by spray pyrolysis method

NASA Astrophysics Data System (ADS)

Sathisha, D.; Naik, K. Gopalakrishna

2018-05-01

Cobalt (Co) doped nickel oxide (NiO) thin films were deposited on glass substrates at a temperature of about 400 °C by spray pyrolysis method. The effect of Co doping concentration on structural, optical and compositional properties of NiO thin films was investigated. X-ray diffraction result shows that the deposited thin films are polycrystalline in nature. Surface morphologies of the deposited thin films were observed by FESEM and AFM. EDS spectra showed the incorporation of Co dopants in NiO thin films. Optical properties of the grown thin films were characterized by UV-visible spectroscopy. It was found that the optical band gap energy and transmittance of the films decrease with increasing Co doping concentration.

The effects of argon ion bombardment on the corrosion resistance of tantalum

NASA Astrophysics Data System (ADS)

Ramezani, A. H.; Sari, A. H.; Shokouhy, A.

2017-02-01

Application of ion beam has been widely used as a surface modification method to improve surface properties. This paper investigates the effect of argon ion implantation on surface structure as well as resistance against tantalum corrosion. In this experiment, argon ions with energy of 30 keV and in doses of 1 × 1017-10 × 1017 ions/cm2 were used. The surface bombardment with inert gases mainly produces modified topography and morphology of the surface. Atomic Force Microscopy was also used to patterned the roughness variations prior to and after the implantation phase. Additionally, the corrosion investigation apparatus wear was applied to compare resistance against tantalum corrosion both before and after ion implantation. The results show that argon ion implantation has a substantial impact on increasing resistance against tantalum corrosion. After the corrosion test, scanning electron microscopy (SEM) analyzed the samples' surface morphologies. In addition, the elemental composition is characterized by energy-dispersive X-ray (EDX) analysis. The purpose of this paper was to obtain the perfect condition for the formation of tantalum corrosion resistance. In order to evaluate the effect of the ion implantation on the corrosion behavior, potentiodynamic tests were performed. The results show that the corrosion resistance of the samples strongly depends on the implantation doses.

An exploration in mineral supply chain mapping using tantalum as an example

USGS Publications Warehouse

Soto-Viruet, Yadira; Menzie, W. David; Papp, John F.; Yager, Thomas R.

2013-01-01

This report uses the supply chain of tantalum (Ta) to investigate the complexity of mineral and metal supply chains in general and show how they can be mapped. A supply chain is made up of all the manufacturers, suppliers, information networks, and so forth, that provide the materials and parts that go into making up a final product. The mineral portion of the supply chain begins with mineral material in the ground (the ore deposit); extends through a series of processes that include mining, beneficiation, processing (smelting and refining), semimanufacture, and manufacture; and continues through transformation of the mineral ore into concentrates, refined mineral commodities, intermediate forms (such as metals and alloys), component parts, and, finally, complex products. This study analyses the supply chain of tantalum beginning with minerals in the ground to many of the final goods that contain tantalum.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

STUDIES ON ANALYTICAL METHODS FOR TRACE ELEMENTS IN METALS BY USING RADIOACTIVE ISOTOPE. III. DETERMINATION OF TANTALUM BY MEANS OF ISOTOPE DILUTION METHOD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amano, H.

1959-10-01

The determination of tantalum by the isotope dilution method in the presence of niobium was investigated by the use of the radioisotope Ta/sup 185/. Tantalum was separated from niobium as tantalum-tannin precipitate under the optimum conditions of a pH of 1.9 to 2.5 and a tantalum/niobium ratio of up to 1/ 50. If niobium was present in amounts 100 times or more that of tantalum, reprecipitation was needed. The reciprocal of the specific activity of tanthlum pentoxide precipitate was in a linear relation to the change in the amount of tantalum added. The recommended method gave an accurate result inmore » the determination of tantalum in steal. (auth)« less

Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.

PubMed

Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

2003-05-23

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

Thermocouples of tantalum and rhenium alloys for more stable vacuum-high temperature performance

NASA Technical Reports Server (NTRS)

Morris, J. F. (Inventor)

1977-01-01

Thermocouples of the present invention provide stability and performance reliability in systems involving high temperatures and vacuums by employing a bimetallic thermocouple sensor wherein each metal of the sensor is selected from a group of metals comprising tantalum and rhenium and alloys containing only those two metals. The tantalum, rhenium thermocouple sensor alloys provide bare metal thermocouple sensors having advantageous vapor pressure compatibilities and performance characteristics. The compatibility and physical characteristics of the thermocouple sensor alloys of the present invention result in improved emf, temperature properties and thermocouple hot junction performance. The thermocouples formed of the tantalum, rhenium alloys exhibit reliability and performance stability in systems involving high temperatures and vacuums and are adaptable to space propulsion and power systems and nuclear environments.

Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures.

PubMed

Krausmann, Jan; Sanctis, Shawn; Engstler, Jörg; Luysberg, Martina; Bruns, Michael; Schneider, Jörg J

2018-06-20

The influence of the composition within multilayered heterostructure oxide semiconductors has a critical impact on the performance of thin-film transistor (TFT) devices. The heterostructures, comprising alternating polycrystalline indium oxide and zinc oxide layers, are fabricated by a facile atomic layer deposition (ALD) process, enabling the tuning of its electrical properties by precisely controlling the thickness of the individual layers. This subsequently results in enhanced TFT performance for the optimized stacked architecture after mild thermal annealing at temperatures as low as 200 °C. Superior transistor characteristics, resulting in an average field-effect mobility (μ sat. ) of 9.3 cm 2 V -1 s -1 ( W/ L = 500), an on/off ratio ( I on / I off ) of 5.3 × 10 9 , and a subthreshold swing of 162 mV dec -1 , combined with excellent long-term and bias stress stability are thus demonstrated. Moreover, the inherent semiconducting mechanism in such multilayered heterostructures can be conveniently tuned by controlling the thickness of the individual layers. Herein, devices comprising a higher In 2 O 3 /ZnO ratio, based on individual layer thicknesses, are predominantly governed by percolation conduction with temperature-independent charge carrier mobility. Careful adjustment of the individual oxide layer thicknesses in devices composed of stacked layers plays a vital role in the reduction of trap states, both interfacial and bulk, which consequently deteriorates the overall device performance. The findings enable an improved understanding of the correlation between TFT performance and the respective thin-film composition in ALD-based heterostructure oxides.

Tantalum capacitor behavior under fast transient overvoltages. [circuit protection against lightning

NASA Technical Reports Server (NTRS)

Zill, J. A.; Castle, K. D.

1974-01-01

Tantalum capacitors were tested to determine failure time when subjected to short-duration, high-voltage surges caused by lightning strikes. Lightning is of concern to NASA because of possible damage to critical spacecraft circuits. The test was designed to determine the minimum time for tantalum capacitor failure and the amount of overvoltage a capacitor could survive, without permanent damage, in 100 microseconds. All tested exhibited good recovery from the transient one-shot pulses with no failure at any voltage, forward or reverse, in less than 25 microseconds.

Thin coatings for protecting titanium aluminides in high-temperature oxidizing environments

NASA Technical Reports Server (NTRS)

Wiedemann, K. E.; Taylor, P. J.; Clark, R. K.; Wallace, T. A.

1991-01-01

Titanium aluminides have high specific strengths at high temperatures but are susceptible to environmental attack. Their use in many aerospace applications would require that they be protected with coatings that, for structural efficiency, must be thin. It is conceivable that acceptable coatings might be found in several oxide systems, and consequently, oxide coatings of many compositions were prepared from sol-gels for study. Response-surface methodology was used to refine coating compositions and factorial experiments were used to develop coating strategies. Oxygen permeability diagrams of two-layer coatings for several oxide systems, an analysis of multiple-layer coatings on rough and polished surfaces, and modeling of the oxidation weight gain are presented.

SU-E-J-201: Position Verification in Breast Cancer Radiotherapy Using Tantalum Clips in the Lumpectomy Cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santvoort, J van; Van der Drift, M; Kuipers, J

2014-06-01

Purpose: To find out whether tantalum surgical clips can be used for online position verification in treatment of the lumpectomy cavity (LC) in breast cancer patients. Tantalum is a high density metal that could be visible on Electronic Portal Images (EPIs) and be an affordable alternative to gold markers. Clips are considered more representative for the LC position than nearby bony structures. Methods: In twelve patients the surgeon had placed 2 to 5 tantalum clips in the LC. The AP and lateral fields used for portal imaging, were adapted. In doing so, both bony structures and tantalum clips were visiblemore » on EPIs. The following analyses were performed:1. Image degradation, with respect to delineating the CTV, of the axial CT slices by artefacts because of the tantalum clips was evaluated by a radiation oncologist;2. The visibility of the tantalum clips on the EPIs was evaluated by four radiation therapists (RTTs);3. Bony anatomy and tantalum clip matches were performed on the same images independently by two observers. Results: 1. Delineation of the CTV by the radiation oncologist was not hampered by CT image artefacts because of the clips.2. The mean score for visibility of the clips on the EPIs, analysed by the four RTTs, was 5.6 on a scale of 10 (range 3.9 – 8.0).3. In total 12 patients with 16 fractions each were analysed. The differences between clip match and bone match are significant with a mean vector length of 5.2 mm (SD 1.9 mm) for the difference. Conclusion: Results of matches on tantalum clips as compared to matches on bony structures differ substantially. Therefore clip matches can result in smaller CTV to PTV margins than bone matches. Visibility of the clips on EPIs is sufficient, so they can be an alternative to gold markers.« less

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

NASA Astrophysics Data System (ADS)

Subramanyam, Guru; Cole, M. W.; Sun, Nian X.; Kalkur, Thottam S.; Sbrockey, Nick M.; Tompa, Gary S.; Guo, Xiaomei; Chen, Chonglin; Alpay, S. P.; Rossetti, G. A.; Dayal, Kaushik; Chen, Long-Qing; Schlom, Darrell G.

2013-11-01

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

The application of porous tantalum cylinder to the repair of comminuted bone defects: a study of rabbit firearm injuries

PubMed Central

Ren, Bo; Zhai, Zhenbo; Guo, Kai; Liu, Yanpu; Hou, Weihuan; Zhu, Qingsheng; Zhu, Jinyu

2015-01-01

The aim of this study is to investigate the effect of porous tantalum material in repair tibial defects caused by firearm injuries in a rabbit model. A multifunctional biological impact machine was used to establish a rabbit tibial defect model of firearm injury. Porous tantalum rods were processed into a hollow cylinder. Kirschner wires were used for intramedullary fixation. We compared the differences of the bone ingrowth of the porous tantalum material by gross observations, X-rays and histological evaluations. The radiographic observations revealed that fibrous tissue covered the material surface after 4 weeks, and periosteal reactions and new bone callus extending materials appeared after 8 weeks. After 16 weeks, the calluses of the firearm injury group were completely wrapped around a porous tantalum material. The group with the highest Lane-Sandhu X-rays cores was the firearm injury and tantalum implant group, and the blank control group exhibited the lowest scores. The histological evaluations revealed that the presence of new bone around the biomaterial had grown into the porous tantalum. By the 16th week, the areas of bone tissue of the firearm injury group was significant higher than that of non-firearm injury group (P<0.05). The comminuted fractures treated with tantalum cylinders exhibited greater bone ingrowth in the firearm injury group. In conditions of firearm injuries, the porous tantalum biomaterial exhibited bone ingrowth that was beneficial to the treatment of bone defects. PMID:26131078

Synthesis of zinc oxide thin films prepared by sol-gel for specific bioactivity

NASA Astrophysics Data System (ADS)

Adam, Tijjani; Basri, B.; Dhahi, Th. S.; Mohammed, Mohammed; Hashim, U.; Noriman, N. Z.; Dahham, Omar S.

2017-09-01

Zinc oxide (ZnO) thin films this device to used for many application like chemical sensor, biosensor, solar energy, etc but my project to use for bioactivity(biosensor). Zinc oxide (ZnO) thin films have been grown using sol-gel technique. Characterization was done using Scanning Electron Microscope (SEM), Energy Dispersive X-ray(EDX) and Electrical Measurement(I-V). ZnO thin film was successfully synthesized using low cost sol-gel spin coating method. The coupling of DNA probe to ZnO thin film supports modified with carboxylic acid (COOH) is certainly the best practical method to make DNA immobilization and it does not require any coupling agent which could be a source of variability during the spotting with an automatic device. So, selected this coupling procedure for further experiments. The sensor was tested with initial trial with low concentrated DNA and able to detect detection of the disease effectively. Silicon-on-insulator (SOI) wafer device with ZnO can detect at different concentration in order to valid the device capabilities for detecting development. The lowest concentration 1 µM HPV DNA probe can detect is 0.1 nM HPV target DNA.

Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope

NASA Technical Reports Server (NTRS)

Heinemann, K.; Rao, D. B.; Douglass, D. L.

1975-01-01

Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

Electrical and structural characterization of IZO (indium oxide-zinc oxide) thin films for device applications

NASA Astrophysics Data System (ADS)

Yaglioglu, Burag

Materials for oxide-based transparent electronics have been recently reported in the literature. These materials include various amorphous and crystalline compounds based on multi-component oxides and many of them offer useful combinations of transparency, controllable carrier concentrations, and reasonable n-carrier mobility. In this thesis, the properties of amorphous and crystalline In2O3-10wt%ZnO, IZO, thin films were investigated for their potential use in oxide electronics. The room temperature deposition of this material using DC magnetron sputtering results in the formation of amorphous films. Annealing amorphous IZO films at 500°C in air produces a previously unknown crystalline compound. Using electron diffraction experiments, it is reported that the crystal structure of this compound is based on the high-pressure rhombohedral phase of In2O3. Electrical properties of different phases of IZO were explored and it was concluded that amorphous films offer most promising characteristics for device applications. Therefore, thin film transistors (TFT) were fabricated based on amorphous IZO films where both the channel and metallization layers were deposited from the same target. The carrier densities in the channel and source-drain layers were adjusted by changing the oxygen content in the sputter chamber during deposition. The resulting transistors operate as depletion mode n-channel field effect devices with high saturation mobilities.

Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

NASA Astrophysics Data System (ADS)

Wu, Shao-Hang; Zhang, Nan; Hu, Yong-Sheng; Chen, Hong; Jiang, Da-Peng; Liu, Xing-Yuan

2015-10-01

Strontium-zinc-oxide (SrZnO) films forming the semiconductor layers of thin-film transistors (TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide (ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel. Project supported by the National Natural Science Foundation of China (Grant No. 6140031454) and the Innovation Program of Chinese Academy of Sciences and State Key Laboratory of Luminescence and Applications.

Peculiarities of structure formation of layered metal-oxide system Ti-Ta-(Ti,Ta)xOy during electro-spark alloying and thermally stimulated modification

NASA Astrophysics Data System (ADS)

Fomina, Marina A.; Koshuro, Vladimir A.; Fomin, Aleksandr A.; Rodionov, Igor V.; Skaptsov, Aleksandr A.; Zakharevich, Andrey M.; Aman, Alexander; Oseev, Aleksandr; Hirsch, Soeren; Majcherek, Soeren

2016-04-01

The study focuses on high-performance combined electro-spark alloying of titanium and titanium alloy (VT1-0, VT16) surface and porous matrix structure oxidation. The metal-oxide coatings morphology is the result of melt drop transfer, heat treatment, and oxidation. The study establishes the influence of technological regimes of alloying and oxidation on morphological heterogeneity of biocompatible layered metal-oxide system Ti-Ta-(Ti,Ta)xOy. It was found that during electro-spark alloying the concentration of tantalum on the titanium surface ranges from 0.1 to 3.2 at.%. Morphology of the deposited splats is represented by uniformly grown crystals of titanium and tantalum oxides, which increase from nano- to submicron size.

Ultra-thin solid oxide fuel cells: Materials and devices

NASA Astrophysics Data System (ADS)

Kerman, Kian

Solid oxide fuel cells are electrochemical energy conversion devices utilizing solid electrolytes transporting O2- that typically operate in the 800 -- 1000 °C temperature range due to the large activation barrier for ionic transport. Reducing electrolyte thickness or increasing ionic conductivity can enable lower temperature operation for both stationary and portable applications. This thesis is focused on the fabrication of free standing ultrathin (<100 nm) oxide membranes of prototypical O 2- conducting electrolytes, namely Y2O3-doped ZrO2 and Gd2O3-doped CeO2. Fabrication of such membranes requires an understanding of thin plate mechanics coupled with controllable thin film deposition processes. Integration of free standing membranes into proof-of-concept fuel cell devices necessitates ideal electrode assemblies as well as creative processing schemes to experimentally test devices in a high temperature dual environment chamber. We present a simple elastic model to determine stable buckling configurations for free standing oxide membranes. This guides the experimental methodology for Y 2O3-doped ZrO2 film processing, which enables tunable internal stress in the films. Using these criteria, we fabricate robust Y2O3-doped ZrO2 membranes on Si and composite polymeric substrates by semiconductor and micro-machining processes, respectively. Fuel cell devices integrating these membranes with metallic electrodes are demonstrated to operate in the 300 -- 500 °C range, exhibiting record performance at such temperatures. A model combining physical transport of electronic carriers in an insulating film and electrochemical aspects of transport is developed to determine the limits of performance enhancement expected via electrolyte thickness reduction. Free standing oxide heterostructures, i.e. electrolyte membrane and oxide electrodes, are demonstrated. Lastly, using Y2O3-doped ZrO2 and Gd2O 3-doped CeO2, novel electrolyte fabrication schemes are explored to develop oxide

Transition of dislocation glide to shear transformation in shocked tantalum

DOE PAGES

Hsiung, Luke L.; Campbell, Geoffrey H.

2017-02-28

A TEM study of pure tantalum and tantalum-tungsten alloys explosively shocked at a peak pressure of 30 GPa (strain rate: ~1 x 10 4 sec -1) is presented. While no ω (hexagonal) phase was found in shock-recovered pure Ta and Ta-5W that contain mainly a low-energy cellular dislocation structure, shock-induced ω phase was found to form in Ta-10W that contains evenly distributed dislocations with a stored dislocation density higher than 1 x 10 12 cm -2. The TEM results clearly reveal that shock-induced α (bcc) → ω (hexagonal) shear transformation occurs when dynamic recovery reactions which lead the formation low-energymore » cellular dislocation structure become largely suppressed in Ta-10W shocked under dynamic (i.e., high strain-rate and high-pressure) conditions. A novel dislocation-based mechanism is proposed to rationalize the transition of dislocation glide to twinning and/or shear transformation in shock-deformed tantalum. Lastly, twinning and/or shear transformation take place as an alternative deformation mechanism to accommodate high-strain-rate straining when the shear stress required for dislocation multiplication exceeds the threshold shear stresses for twinning and/or shear transformation.« less

Fabrication of band gap engineered nanostructured tri-metallic (Mn-Co-Ti) oxide thin films

NASA Astrophysics Data System (ADS)

Mansoor, Muhammad Adil; Yusof, Farazila Binti; Nay-Ming, Huang

2018-04-01

In continuation of our previous studies on photoelectrochemical (PEC) properties of titanium based composite oxide thin films, an effort is made to develop thin films of 1:1:2 manganese-cobalt-titanium oxide composite, Mn2O3-Co2O3-4TiO2 (MCT), using Co(OAc)2 and a bimetallic manganese-titanium complex, [Mn2Ti4(TFA)8(THF)6(OH)4(O)2].0.4THF (1), where OAc = acetato, TFA = trifluoroacetato and THF = tetrahydrofuran, via aerosol-assisted chemical vapour deposition (AACVD) technique. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX) spectroscopic analyses confirmed formation of thin film of Mn2O3-Co2O3-4TiO2 composite material with uniformly distributed agglomerated particles. The average size of 39.5 nm, of the particles embedded inside agglomerates, was estimated by Scherer's equation. Further, UV-Vis spectroscopy was used to estimate the band gap of 2.62 eV for MCT composite thin film.

Preparation of etched tantalum semimicro capacitor stimulation electrodes.

PubMed

Robblee, L S; Kelliher, E M; Langmuir, M E; Vartanian, H; McHardy, J

1983-03-01

The ideal electrode for stimulation of the nervous system is one that will inject charge by purely capacitive processes. One approach is to exploit the type of metal-oxide combination used in electrolytic capacitors, e.g., Ta/Ta2O5. For this purpose, fine tantalum wire (0.25 mm diam) was etched electrolytically at constant current in a methanol solution of NH4Br containing 1.5 wt % H2O. Electrolytic etching produced a conical tip with a length of ca. 0.5 mm and shaft diameters ranging from 0.10 to 0.16 mm. The etched electrodes were anodized to 10 V (vs. SCE) in 0.1 vol % H3PO4. The capacitance values normalized to geometric area of etched electrodes ranged from 0.13 to 0.33 micro F mm-2. Comparison of these values to the capacitance of "smooth" tantalum anodized to 10 V (0.011 micro F mm-2) indicated that the degree of surface enhancement, or etch ratio, was 12-30. The surface roughness was confirmed by scanning electron microscopy studies which revealed an intricate array of irregularly shaped surface projections about 1-2 micrometers wide. The etched electrodes were capable of delivering 0.06-0.1 micro C of charge with 0.1 ms pulses at a pulse repetition rate of 400 Hz when operated at 50% of the anodization voltage. This quantity of charge corresponded to volumetric charge densities of 20-30 micro C mm-3 and area charge densities of 0.55-0.88 micro C mm-2. Charge storage was proportionately higher at higher fractional values of the formation voltage. Leakage currents at 5 V were ca. 2 nA. Neither long-term passive storage (1500 h) nor extended pulsing time (18 h) had a deleterious effect on electrode performance. The trend in electrical stimulation work is toward smaller electrodes. The procedures developed in this study should be particularly well-suited to the fabrication of even smaller electrodes because of the favorable electrical and geometric characteristics of the etched surface.

Amorphous and Crystalline Vanadium Oxides as High-Energy and High-Power Cathodes for Three-Dimensional Thin-Film Lithium Ion Batteries.

PubMed

Mattelaer, Felix; Geryl, Kobe; Rampelberg, Geert; Dendooven, Jolien; Detavernier, Christophe

2017-04-19

Flexible wearable electronics and on-chip energy storage for wireless sensors drive rechargeable batteries toward thin-film lithium ion batteries. To enable more charge storage on a given surface, higher energy density materials are required, while faster energy storage and release can be obtained by going to thinner films. Vanadium oxides have been examined as cathodes in classical and thin-film lithium ion batteries for decades, but amorphous vanadium oxide thin films have been mostly discarded. Here, we investigate the use of atomic layer deposition, which enables electrode deposition on complex three-dimensional (3D) battery architectures, to obtain both amorphous and crystalline VO 2 and V 2 O 5 , and we evaluate their thin-film cathode performance. Very high volumetric capacities are found, alongside excellent kinetics and good cycling stability. Better kinetics and higher volumetric capacities were observed for the amorphous vanadium oxides compared to their crystalline counterparts. The conformal deposition of these vanadium oxides on silicon micropillar structures is demonstrated. This study shows the promising potential of these atomic layer deposited vanadium oxides as cathodes for 3D all-solid-state thin-film lithium ion batteries.

Development of a high efficiency thin silicon solar cell. [fabrication and stability tests

NASA Technical Reports Server (NTRS)

Lindmayer, J.

1976-01-01

One hundred thin (120 microns to 260 microns) silicon-aluminum solar cells were fabricated and tested. Silicon slices were prepared, into which an aluminum alloy was evaporated over a range of temperatures and times. Antireflection coatings of tantalum oxide were applied to the cells. Reflectance of the silicon-aluminum interfaces was correlated to alloy temperature (graphs are shown). Optical measurements of the rear surface-internal reflectance of the cells were performed using a Beckman spectrophotometer. An improved gridline pattern was evaluated and stability tests (thermal cycling tests) were performed. Results show that: (1) a high-index, high-transmittance antireflection coating was obtained; (2) the improved metallization of the cells gave a 60 percent rear surface-internal reflectance, and the cells displayed excellent fill factors and blue response of the spectrum; (3) an improved gridline pattern (5 micron linewidths compared to 13 micron linewidths) resulted in a 1.3 percent improvement in short circuit currents; and (4) the stability tests showed no change in cell properties.

Characterization of zinc oxide thin film for pH detector

NASA Astrophysics Data System (ADS)

Hashim, Uda; Fathil, M. F. M.; Arshad, M. K. Md; Gopinath, Subash C. B.; Uda, M. N. A.

2017-03-01

This paper presents the fabrication process of the zinc oxide thin films for using to act as pH detection by using different PH solution. Sol-gel solution technique is used for preparing zinc oxide seed solution, followed by metal oxide deposition process by using spin coater on the silicon dioxide. Silicon dioxide layer is grown on the silicon wafer, then, ZnO seed solution is deposited on the silicon layer, baked, and annealing process carried on to undergo the characterization of its surface morphology, structural and crystalline phase. Electrical characterization is showed by using PH 4, 7, and 10 is dropped on the surface of the die, in addition, APTES solution is used as linker and also as a references of the electrical characterization.

Nanoscale reduction of graphene oxide thin films and its characterization

NASA Astrophysics Data System (ADS)

Lorenzoni, M.; Giugni, A.; Di Fabrizio, E.; Pérez-Murano, Francesc; Mescola, A.; Torre, B.

2015-07-01

In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

PubMed

Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

2017-03-01

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In 2 O 3 /ZnO heterojunction. We find that In 2 O 3 /ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In 2 O 3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In 2 O 3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

PubMed Central

Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A.; Anthopoulos, Thomas D.

2017-01-01

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications. PMID:28435867

Ultra-thin Oxide Membranes: Synthesis and Carrier Transport

NASA Astrophysics Data System (ADS)

Sim, Jai Sung

Self-supported freestanding membranes are films that are devoid of any underlying supporting layers. The key advantage of such structures is that, due to the lack of substrate effects - both mechanical and chemical, the true native properties of the material can be probed. This is crucial since many of the studies done on materials that are used as freestanding membranes are done as films clamped to substrates or in the bulk form. This thesis focuses on the synthesis and fabrication as well as electrical studies of free standing ultrathin < 40nm oxide membranes. It also is one of the first demonstrations for electrically probing nanoscale freestanding oxide membranes. Fabrication of such membranes is non-trivial as oxide materials are often brittle and difficult to handle. Therefore, it requires an understanding of thin plate mechanics coupled with controllable thin film deposition process. Taking things a step further, to electrically probe these membranes required design of complex device architecture and extensive optimization of nano-fabrication processes. The challenges and optimized fabrication method of such membranes are demonstrated. Three materials are probed in this study, VO2, TiO2, and CeO2. VO2 for understanding structural considerations for electronic phase change and nature of ionic liquid gating, TiO2 and CeO2 for understanding surface conduction properties and surface chemistry. The VO2 study shows shift in metal-insulator transition (MIT) temperature arising from stress relaxation and opening of the hysteresis. The ionic liquid gating studies showed reversible modulation of channel resistance and allowed distinguishing bulk process from the surface effects. Comparing the ionic liquid gating experiments to hydrogen doping experiments illustrated that ionic liquid gating can be a surface limited electrostatic effect, if the critical voltage threshold is not exceeded. TiO2 study shows creation of non-stoichiometric forms under ion milling. Utilizing

Vectorial method used to monitor an evolving system: Titanium oxide thin films under UV illumination

NASA Astrophysics Data System (ADS)

Béchu, Solène; Humbert, Bernard; Fernandez, Vincent; Fairley, Neal; Richard-Plouet, Mireille

2018-07-01

Under in situ UV illumination, some materials present evolution of their opto-electronic properties that can be monitored by spectroscopy. We present here a mathematical method which can be applied to spectroscopic measurements when an evolving set of data is recorded: the vectorial method. The investigations and quantifications are performed by Infrared spectroscopy and XPS on organic-inorganic thin films prepared by sol-gel. The inorganic part of these hybrid thin films contains Ti oxide-network based whereas the organic part is composed of N,N-dimethylformamide and its hydrolysis products. Under UV illumination, those films exhibit intermediate bandgap behavior due to the photoreduction of Ti(IV) in Ti(III). The role of the solvent in the thin film is underlined during the process of photoreduction together with an understanding of the condensation of the Ti oxide-based network, as these evolutions are critical for the opto-electronic properties of those thin films.

Clustering of transmutation elements tantalum, rhenium and osmium in tungsten in a fusion environment

NASA Astrophysics Data System (ADS)

You, Yu-Wei; Kong, Xiang-Shan; Wu, Xuebang; Liu, C. S.; Fang, Q. F.; Chen, J. L.; Luo, G.-N.

2017-08-01

The formation of transmutation solute-rich precipitates has been reported to seriously degrade the mechanical properties of tungsten in a fusion environment. However, the underlying mechanisms controlling the formation of the precipitates are still unknown. In this study, first-principles calculations are therefore performed to systemically determine the stable structures and binding energies of solute clusters in tungsten consisting of tantalum, rhenium and osmium atoms as well as irradiation-induced vacancies. These clusters are known to act as precursors for the formation of precipitates. We find that osmium can easily segregate to form clusters even in defect-free tungsten alloys, whereas extremely high tantalum and rhenium concentrations are required for the formation of clusters. Vacancies greatly facilitate the clustering of rhenium and osmium, while tantalum is an exception. The binding energies of vacancy-osmium clusters are found to be much higher than those of vacancy-tantalum and vacancy-rhenium clusters. Osmium is observed to strongly promote the formation of vacancy-rhenium clusters, while tantalum can suppress the formation of vacancy-rhenium and vacancy-osmium clusters. The local strain and electronic structure are analyzed to reveal the underlying mechanisms governing the cluster formation. Employing the law of mass action, we predict the evolution of the relative concentration of vacancy-rhenium clusters. This work presents a microscopic picture describing the nucleation and growth of solute clusters in tungsten alloys in a fusion reactor environment, and thereby explains recent experimental phenomena.

Deposition and characterization of magnetron sputtered bcc tantalum

NASA Astrophysics Data System (ADS)

Patel, Anamika

The goal of this thesis was to provide scientific and technical research results for developing and characterizing tantalum (Ta) coatings on steel substrates deposited by DC magnetron sputtering. Deposition of tantalum on steel is of special interest for the protection it offers to surfaces, e.g. the surfaces of gun barrels against the erosive wear of hot propellant gases and the mechanical damage caused by the motion of launching projectiles. Electro-plated chromium is presently most commonly used for this purpose; however, it is considered to be carcinogenic in its hexavalent form. Tantalum is being investigated as non-toxic alternative to chromium and also because of its superior protective properties in these extreme environments. DC magnetron sputtering was chosen for this investigation of tantalum coatings on steel substrates because it is a versatile industrial proven process for deposition of metals. Sputter deposited Ta films can have two crystallographic structures: (1) body center cubic (bcc) phase, characterized by high toughness and high ductility and (2) a tetragonal beta phase characterized by brittleness and a tendency to fail under stress. It was found in this work that the bcc Ta coatings on steel can be obtained reliably by either of two methods: (1) depositing Ta on a submicron, stoichiometric TaN seed layer reactively sputtered on unheated steel and (2) depositing Ta directly on steel heated above a critical temperature. For argon sputtering gas this critical temperature was found to be 400°C at a pressure of 5 mtorr. With the heavier krypton gas, this critical temperature is reduced to 350°C. X-ray diffraction (XRD) was used to investigate the structure of tantalum and nitride films, and the composition of the nitride films was measured by nuclear reaction analyses (NRA), which were used to study in detail the enhancement of the bcc phase of Ta on steel. The scratch adhesion tests performed with a diamond hemispherical tip of radius 200 mum

Mineral resource of the month: tantalum

USGS Publications Warehouse

Cunningham, Larry D.

2004-01-01

Tantalum is a metal that is critical to the United States because of its defense-related applications in aircraft, missiles and radio communications. It is ductile, easily fabricated, highly resistant to corrosion by acids, a good conductor of heat and electricity, and has a high melting point. Tantalum’s first commercial usage was as filament material in incandescent electric lamps in the early 1900s.

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subramanyam, Guru, E-mail: gsubramanyam1@udayton.edu; Cole, M. W., E-mail: melanie.w.cole.civ@mail.mil; Sun, Nian X.

2013-11-21

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstratedmore » in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.« less

Effects of the [OC6F5] moiety upon structural geometry: crystal structures of half-sandwich tantalum(V) aryloxide complexes from reaction of Cp*Ta(N(t)Bu)(CH2R)2 with pentafluorophenol.

PubMed

Cole, Jacqueline M; Chan, Michael C W; Gibson, Vernon C; Howard, Judith A K

2011-10-01

The synthesis, chemical and structural characterization of a series of pentamethylcyclopentadienyl (Cp*) tantalum imido complexes and aryloxide derivatives are presented. Specifically, the imido complexes Cp*Ta(N(t)Bu)(CH(2)R)(2), where R = Ph [dibenzyl(tert-butylamido) (η(5)-pentamethylcyclopentadienyl)tantalum(IV) (1)], Me(2)Ph [tert-butylamido)bis(2-methyl-2-phenylpropyl) (η(5)-pentamethylcyclopentadienyl)tantalum(IV) (2)], CMe(3) [(tert-butylamido)bis(2,2-dimethylpropyl) (η(5)-pentamethylcyclopentadienyl)tantalum(IV) (3)], are reported. The crystal structure of (3) reveals α-agostic interactions with the Ta atom. The resulting increase in the tantalum core coordination improves electronic stability. As such it does not react with pentafluorophenol, in contrast to the other two reported imido complexes [(1) and (2)]. Addition of C(6)F(5)OH to (1) yields a dimeric aryl-oxide derivative, [Cp*Ta(CH(2)Ph)(OC(6)H(5))(μ-O)](2) [di-μ-oxido-bis[benzyl(pentafluorophenolato) (η(5)-pentamethylcyclopentadienyl)tantalum(V)] (4)]. Its crystal structure reveals long Ta-O(C(6)H(5)) bonds but short oxo-bridging Ta-O bonds. This is explained by accounting for the fierce electronic competition for the vacant d(π) orbitals of the electrophilic Ta(V) centre. Steric congestion around each metal is alleviated by a large twist angle (77.1°) between the benzyl and pentafluorophenyl ligands and the ordering of each of these groups into stacked pairs. The imido complex (2) reacts with C(6)F(5)OH to produce a mixture of Cp*Ta(OC(6)F(5))(4) [tetrakis(pentafluorophenolato)(η(5)-pentamethylcyclopentadienyl)tantalum(V) (5)] and [Cp*Ta(OC(6)F(5))(2)(μ-O)](2) [di-μ-oxido-bis[bis(pentafluorophenolato)(η(5)-pentamethylcyclopentadienyl)tantalum(V)] (6)]. Steric congestion is offset in both cases by the twisting of its pentafluorophenyl ligands. Particularly strong electronic competition for the empty d(π) metal orbitals in (6) is reflected in its bond geometry, and owes itself to the

Tantalum coating of porous carbon scaffold supplemented with autologous bone marrow stromal stem cells for bone regeneration in vitro and in vivo.

PubMed

Wei, Xiaowei; Zhao, Dewei; Wang, Benjie; Wang, Wei; Kang, Kai; Xie, Hui; Liu, Baoyi; Zhang, Xiuzhi; Zhang, Jinsong; Yang, Zhenming

2016-03-01

Porous tantalum metal with low elastic modulus is similar to cancellous bone. Reticulated vitreous carbon (RVC) can provide three-dimensional pore structure and serves as the ideal scaffold of tantalum coating. In this study, the biocompatibility of domestic porous tantalum was first successfully tested with bone marrow stromal stem cells (BMSCs) in vitro and for bone tissue repair in vivo. We evaluated cytotoxicity of RVC scaffold and tantalum coating using BMSCs. The morphology, adhesion, and proliferation of BMSCs were observed via laser scanning confocal microscope and scanning electron microscopy. In addition, porous tantalum rods with or without autologous BMSCs were implanted on hind legs in dogs, respectively. The osteogenic potential was observed by hard tissue slice examination. At three weeks and six weeks following implantation, new osteoblasts and new bone were observed at the tantalum-host bone interface and pores. At 12 weeks postporous tantalum with autologous BMSCs implantation, regenerated trabecular equivalent to mature bone was found in the pore of tantalum rods. Our results suggested that domestic porous tantalum had excellent biocompatibility and could promote new bone formation in vivo. Meanwhile, the osteogenesis of porous tantalum associated with autologous BMSCs was more excellent than only tantalum implantation. Future clinical studies are warranted to verify the clinical efficacy of combined implantation of this domestic porous tantalum associated with autologous BMSCs implantation and compare their efficacy with conventional autologous bone grafting carrying blood vessel in patients needing bone repairing. © 2016 by the Society for Experimental Biology and Medicine.

Inkjet-printed p-type nickel oxide thin-film transistor

NASA Astrophysics Data System (ADS)

Hu, Hailong; Zhu, Jingguang; Chen, Maosheng; Guo, Tailiang; Li, Fushan

2018-05-01

High-performance inkjet-printed nickel oxide thin-film transistors (TFTs) with Al2O3 high-k dielectric have been fabricated using a sol-gel precursor ink. The "coffee ring" effect during the printing process was facilely restrained by modifying the viscosity of the ink to control the outward capillary flow. The impacts on the device performance was studied in detail in consideration of annealing temperature of the nickel oxide film and the properties of dielectric layer. The optimized switching ability of the device were achieved at an annealing temperature of 280 °C on a 50-nm-thick Al2O3 dielectric layer, with a hole mobility of 0.78 cm2/V·s, threshold voltage of -0.6 V and on/off current ratio of 5.3 × 104. The as-printed p-type oxide TFTs show potential application in low-cost, large-area complementary electronic devices.

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

PubMed Central

Noviyana, Imas; Lestari, Annisa Dwi; Putri, Maryane; Won, Mi-Sook; Bae, Jong-Seong; Heo, Young-Woo; Lee, Hee Young

2017-01-01

Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C. PMID:28773058

Tantalum coating of porous carbon scaffold supplemented with autologous bone marrow stromal stem cells for bone regeneration in vitro and in vivo

PubMed Central

Wei, Xiaowei; Wang, Benjie; Wang, Wei; Kang, Kai; Xie, Hui; Liu, Baoyi; Zhang, Xiuzhi; Zhang, Jinsong; Yang, Zhenming

2016-01-01

Porous tantalum metal with low elastic modulus is similar to cancellous bone. Reticulated vitreous carbon (RVC) can provide three-dimensional pore structure and serves as the ideal scaffold of tantalum coating. In this study, the biocompatibility of domestic porous tantalum was first successfully tested with bone marrow stromal stem cells (BMSCs) in vitro and for bone tissue repair in vivo. We evaluated cytotoxicity of RVC scaffold and tantalum coating using BMSCs. The morphology, adhesion, and proliferation of BMSCs were observed via laser scanning confocal microscope and scanning electron microscopy. In addition, porous tantalum rods with or without autologous BMSCs were implanted on hind legs in dogs, respectively. The osteogenic potential was observed by hard tissue slice examination. At three weeks and six weeks following implantation, new osteoblasts and new bone were observed at the tantalum–host bone interface and pores. At 12 weeks postporous tantalum with autologous BMSCs implantation, regenerated trabecular equivalent to mature bone was found in the pore of tantalum rods. Our results suggested that domestic porous tantalum had excellent biocompatibility and could promote new bone formation in vivo. Meanwhile, the osteogenesis of porous tantalum associated with autologous BMSCs was more excellent than only tantalum implantation. Future clinical studies are warranted to verify the clinical efficacy of combined implantation of this domestic porous tantalum associated with autologous BMSCs implantation and compare their efficacy with conventional autologous bone grafting carrying blood vessel in patients needing bone repairing. PMID:26843518

Trap States of the Oxide Thin Film Transistor

NASA Astrophysics Data System (ADS)

Yu, Kyeong Min; Yuh, Jin Tae; Park, Sang Hee Ko; Ryu, Min Ki; Yun, Eui Jung; Bae, Byung Seong

2013-10-01

We investigated the temperature dependent recovery of the threshold voltage shift observed in both ZnO and indium gallium zinc oxide (IGZO) thin film transistors (TFTs) after application of gate bias and light illumination. Two types of recovery were observed for both the ZnO and IGZO TFTs; low temperature recovery (below 110 °C) which is attributed to the trapped charge and high temperature recovery (over 110 °C) which is related to the annihilation of trap states generated during stresses. From a comparison study of the recovery rate with the analysis of hydrogen diffusion isochronal annealing, a similar behavior was observed for both TFT recovery and hydrogen diffusion. This result suggests that hydrogen plays an important role in the generation and annihilation of trap states in oxide TFTs under gate bias or light illumination stresses.

Temperature Dependence of the Seebeck Coefficient in Zinc Oxide Thin Films

NASA Astrophysics Data System (ADS)

Noori, Amirreza; Masoumi, Saeed; Hashemi, Najmeh

2017-12-01

Thermoelectric devices are reliable tools for converting waste heat into electricity as they last long, produce no noise or vibration, have no moving elements, and their light weight makes them suitable for the outer space usage. Materials with high thermoelectric figure of merit (zT) have the most important role in the fabrication of efficient thermoelectric devices. Metal oxide semiconductors, specially zinc oxide has recently received attention as a material suitable for sensor, optoelectronic and thermoelectric device applications because of their wide direct bandgap, chemical stability, high-energy radiation endurance, transparency and acceptable zT. Understanding the thermoelectric properties of the undoped ZnO thin films can help design better ZnO-based devices. Here, we report the results of our experimental work on the thermoelectric properties of the undoped polycrystalline ZnO thin films. These films are deposited on alumina substrates by thermal evaporation of zinc in vacuum followed by a controlled oxidation process in air carried out at the 350-500 °C temperature range. The experimental setup including gradient heaters, thermometry system and Seebeck voltage measurement equipment for high resistance samples is described. Seebeck voltage and electrical resistivity of the samples are measured at different conditions. The observed temperature dependence of the Seebeck coefficient is discussed.

Application of pyrolysis to recycling organics from waste tantalum capacitors.

PubMed

Niu, Bo; Chen, Zhenyang; Xu, Zhenming

2017-08-05

Tantalum capacitors (TCs) are widely used in electronic appliances. The rapid replacement of electronic products results in generating large amounts of waste TCs (WTCs). WTCs, rich in valuable tantalum, are considered as high quality tantalum resources for recycling. However, environmental pollution will be caused if the organics of WTCs were not properly disposed. Therefore, effectively recycling the organics of WTCs is significant for recovering the valuable parts. This study proposed an argon (Ar) pyrolysis process to recycle the organics from WTCs. The organic decomposition kinetic was first analyzed by thermogravimetry. The results showed that the organics were decomposed in two major steps and the average activation energy was calculated to 234kJ/mol. Then, the suitable pyrolysis parameters were determined as 550°C, 30min and 100ml/min. The organics were effectively decomposed and converted to oils (mainly contained phenol homologs and benzene homologs) and gases (some hydrocarbon). These pyrolysis products could be reutilized as energy sources. Moreover, based on the products and bond energy theory, the pyrolysis mechanisms of the organics were also discussed. Finally, a reasonable technological process for products utilization was presented. This study contributes to the efficient recycling the organics before valuable material recovery from WTCs. Copyright © 2017 Elsevier B.V. All rights reserved.

Thermomechanical and Thermochemical Behavior of a Hafnium-20 Percent Tantalum Alloy. Ph.D. Thesis - North Carolina State Univ., Raleigh

NASA Technical Reports Server (NTRS)

Howell, J. P.

1971-01-01

An investigation was conducted to determine the thermomechanical and thermochemical behavior of a high temperature, oxidation resistant, hafnium-20 percent tantalum alloy. The elastic and shear moduli of this alloy were determined in air up to 1000 C and in vacuum up to 2000 C using a mechanical resonance technique. The internal friction of the alloy was measured up to temperatures greater than 1400 C. Room temperature stress-strain behavior of the oxidized and unoxidized alloy was established. The effect of annealing on the elastic and shear moduli of the extruded rod material was investigated. The martensitic-type phase transformation occurring in the alloy was studied using hot stage metallography and electron microscopy. Static oxidation tests were conducted on the alloy at temperatures from 1000 C to 1700 C with weight gain measurements made as a function of time and temperatures. Surface morphology studies were conducted on the oxide coatings formed at the different temperatures using scanning electron microscopy and X-ray diffraction techniques.

Polyelectrolyte-mediated assembly of copper-phthalocyanine tetrasulfonate multilayers and the subsequent production of nanoparticulate copper oxide thin films.

PubMed

Chickneyan, Zarui Sara; Briseno, Alejandro L; Shi, Xiangyang; Han, Shubo; Huang, Jiaxing; Zhou, Feimeng

2004-07-01

An approach to producing films of nanometer-sized copper oxide particulates, based on polyelectrolyte-mediated assembly of the precursor, copper(II)phthalocyanine tetrasulfonate (CPTS), is described. Multilayered CPTS and polydiallyldimethylammonium chloride (PDADMAC) were alternately assembled on different planar substrates via the layer-by-layer (LbL) procedure. The growth of CPTS multilayers was monitored by UV-visible spectrometry and quartz crystal microbalance (QCM) measurements. Both the UV-visible spectra and the QCM data showed that a fixed amount of CPTS could be attached to the substrate surface for a given adsorption cycle. Cyclic voltammograms at the CPTS/PDADMAC-covered gold electrode exhibited a decrease in peak currents with the layer number, indicating that the permeability of CPTS multilayers on the electrodes had diminished. When these CPTS multilayered films were calcined at elevated temperatures, uniform thin films composed of nanoparticulate copper oxide could be produced. Ellipsometry showed that the thickness of copper oxide nanoparticulate films could be precisely tailored by varying the thickness of CPTS multilayer films. The morphology and roughness of CPTS multilayer and copper oxide thin films were characterized by atomic force microscopy. X-ray diffraction (XRD) measurements indicated that these thin films contained both CuO and Cu2O nanoparticles. The preparation of such copper oxide thin films with the use of metal complex precursors represents a new route for the synthesis of inorganic oxide films with a controlled thickness.

Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho

2016-01-15

Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solidmore » oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.« less

Spatially resolved variations in reflectivity across iron oxide thin films

NASA Astrophysics Data System (ADS)

Kelley, Chris S.; Thompson, Sarah M.; Gilks, Daniel; Sizeland, James; Lari, Leonardo; Lazarov, Vlado K.; Matsuzaki, Kosuke; LeFrançois, Stéphane; Cinque, Gianfelice; Dumas, Paul

2017-11-01

The spin polarising properties of the iron oxide magnetite (Fe3O4) make it attractive for use in spintronic devices, but its sensitivity to compositional and structural variations make it challenging to prepare reliably. Infrared microspectroscopy and modelling are used to determine the spatial variation in the chemical composition of three thin films of iron oxide; one prepared by pulsed laser deposition (PLD), one by molecular beam epitaxy (MBE) deposition of iron whilst simultaneously flowing oxygen into the chamber and one by flowing oxygen only once deposition is complete. The technique is easily able to distinguish between films which contain metallic iron and different iron oxide phases as well as spatial variations in composition across the films. The film grown by post-oxidising iron is spatially uniform but not fully oxidised, the film grown by simultaneously oxidising iron showed spatial variation in oxide composition while the film grown by PLD was spatially uniform magnetite.

Effect of the oxygen content in a salt solution on the characteristics of sodium-reduced tantalum powders

NASA Astrophysics Data System (ADS)

Kolosov, V. N.; Orlov, V. M.; Miroshnichenko, M. N.; Prokhorova, T. Yu.; Masloboeva, S. M.; Belyaevskii, A. T.

2009-02-01

The characteristics of the tantalum powders produced by sodium thermal reduction from salt melts based on K2TaF7 and NaCl with various amounts of added oxycompounds K3TaOF6 and K2Ta2O3F6 are studied. At a molar ratio of oxygen to tantalum of 1.25 in the initial melt, capacitor tantalum powders with a specific surface area more than 3 m2/g are produced. The specific capacitance of the anodes made from these powders reaches 58 mC/g.

Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

PubMed

Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

2014-11-01

The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Positron annihilation and X-ray diffraction studies on tin oxide thin films

NASA Astrophysics Data System (ADS)

Prabakar, K.; Abhaya, S.; Krishnan, R.; Kalavathi, S.; Dash, S.; Jayapandian, J.; Amarendra, G.

2009-04-01

Positron annihilation spectroscopy along with glancing incidence X-ray diffraction have been used to investigate tin oxide thin films grown on Si by pulsed laser deposition. The films were prepared at room temperature and at 670 K under oxygen partial pressure. As-grown samples are amorphous and are found to contain large concentration of open volume sites (vacancy defects). Post-deposition annealing of as-grown samples at 970 K is found to drastically reduce the number of open volume sites and the film becomes crystalline. However, film grown under elevated temperature and under partial pressure of oxygen is found to exhibit a lower S-parameter, indicating lower defect concentration. Based on the analysis of experimental positron annihilation results, the defect-sensitive S-parameter and the overlayer thickness of tin oxide thin films are deduced. S- W correlation plots exhibit distinct positron trapping defect states in three samples.

Consequence of oxidant to monomer ratio on optical and structural properties of Polypyrrole thin film deposited by oxidation polymerization technique

NASA Astrophysics Data System (ADS)

Jatratkar, Aviraj A.; Yadav, Jyotiprakash B.; Kamat, Sandip V.; Patil, Vaishali S.; Mahadik, D. B.; Barshilia, Harish C.; Puri, Vijaya; Puri, R. K.

2015-05-01

This paper reports the effect of oxidant to monomer (O/M) ratio on optical and structural properties of Polypyrrole (PPy) thin film deposited by chemical oxidation polymerization technique. Noticeable changes have observed in the properties of PPy thin films with O/M ratio. Cauliflower structure have been observed in FE-SEM images, wherein grain size is observed to decrease with increase in O/M ratio. AFM results are in good agreement with FE-SEM results. From FTIR spectra it is found that, PPy is in highly oxidized form at low O/M ratio but oxidation decreased with increase in O/M ratio. Also C-C stretching vibrations of PPy ring is decreased whereas C=C stretching is increased with ratio. Absorption peak around 450 nm corresponds to π-π* transition and around 800 nm for polarons and bipolarons. The intensity of such peaks confirms the conductivity of PPy, which is observed maximum at low O/M ratio and found to decrease with increase in ratio. Optical band gap (BG) is found to increase from 2.07 eV to 2.11 eV with increase in the O/M ratio.

Effect of cadmium incorporation on the properties of zinc oxide thin films

NASA Astrophysics Data System (ADS)

Bharath, S. P.; Bangera, Kasturi V.; Shivakumar, G. K.

2018-02-01

Cd x Zn1- x O (0 ≤ x ≤ 0.20) thin films are deposited on soda lime glass substrates using spray pyrolysis technique. To check the thermal stability, Cd x Zn1- x O thin films are subjected to annealing. Both the as-deposited and annealed Cd x Zn1- x O thin films are characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and energy-dispersive X-ray analysis (EDAX) to check the structural, surface morphological and compositional properties, respectively. XRD analysis reveals that the both as-deposited and annealed Cd x Zn1- x O thin films are (002) oriented with wurtzite structure. SEM studies confirm that as-deposited, as well as annealed Cd x Zn1- x O thin films are free from pinholes and cracks. Compositional analysis shows the deficiency in Cd content after annealing. Optical properties evaluated from UV-Vis spectroscopy shows red shift in the band gap for Cd x Zn1- x O thin films. Electrical property measured using two probe method shows a decrease in the resistance after Cd incorporation. The results indicate that cadmium can be successfully incorporated in zinc oxide thin films to achieve structural changes in the properties of films.

Evaluation of the 3D Finite Element Method Using a Tantalum Rod for Osteonecrosis of the Femoral Head

PubMed Central

Shi, Jingsheng; Chen, Jie; Wu, Jianguo; Chen, Feiyan; Huang, Gangyong; Wang, Zhan; Zhao, Guanglei; Wei, Yibing; Wang, Siqun

2014-01-01

Background The aim of this study was to contrast the collapse values of the postoperative weight-bearing areas of different tantalum rod implant positions, fibula implantation, and core decompression model and to investigate the advantages and disadvantages of tantalum rod implantation in different ranges of osteonecrosis in comparison with other methods. Material/Methods The 3D finite element method was used to establish the 3D finite element model of normal upper femur, 3D finite element model after tantalum rod implantation into different positions of the upper femur in different osteonecrosis ranges, and other 3D finite element models for simulating fibula implant and core decompression. Results The collapse values in the weight-bearing area of the femoral head of the tantalum rod implant model inside the osteonecrosis area, implant model in the middle of the osteonecrosis area, fibula implant model, and shortening implant model exhibited no statistically significant differences (p>0.05) when the osteonecrosis range was small (60°). The stress values on the artificial bone surface for the tantalum rod implant model inside the osteonecrosis area and the shortening implant model exhibited statistical significance (p<0.01). Conclusions Tantalum rod implantation into the osteonecrosis area can reduce the collapse values in the weight-bearing area when osteonecrosis of the femoral head (ONFH) was in a certain range, thereby obtaining better clinical effects. When ONFH was in a large range (120°), the tantalum rod implantation inside the osteonecrosis area, shortening implant or fibula implant can reduce the collapse values of the femoral head, as assessed by other methods. PMID:25479830

The effect of tantalum and carbon on the structure/properties of a single crystal nickel-base superalloy. M.S. Thesis. Final Report

NASA Technical Reports Server (NTRS)

Nguyen, H. C.

1984-01-01

The microstructure, phase chemistry, and creep and hot tensile properties were studied as a function of tantalum and carbon levels in Mar-M247 type single crystal alloys. Microstructural studies showed that several types of carbides (MC, M23C6 and M5C) are present in the normal carbon (0.10 wt % C) alloys after heat treatment. In general, the composition of the MC carbides changes from titanium rich to tantalum rich as the tantalum level in the alloy increases. Small M23C6 carbides are present in all alloys. Tungsten rich M6C carbides are also observed in the alloy containing no tantalum. No carbides are present in the low carbon (0.01 wt % C) alloy series. The morphology of gamma prime is observed to be sensitive to heat treatment and tantalum level in the alloy. Cuboidal gamma prime is present in all the as cast structures. After heat treatment, the gamma prime precipitates tend to have a more spheroidal like morphology, and this tendency increases as the tantalum level decreases. On prolonged aging, the gamma prime reverts back to a cuboidal morphology or under stress at high temperatures, forms a rafted structure. The weight fraction and lattice parameter of the spheroidal gamma prime increases with increasing tantalum content. Changes in the phase chemistry of the gamma prime matrix and gamma prime have also been analyzed using phase extraction techniques. The partitioning ratio decreases for tungsten and aluminum and increases for tantalum as the tantalum content increases for both alloy series; no significant changes occur in the partitioning ratios of the other alloying elements. A reduction in secondary creep rate and an increase in rupture time result from increasing the tantalum content and decreasing the carbon level.

Conflict minerals from the Democratic Republic of the Congo: global tantalum processing plants, a critical part of the tantalum supply chain

USGS Publications Warehouse

Papp, John F.

2014-01-01

Post-beneficiation processing plants (generally called smelters and refineries) for 3TG mineral ores and concentrates were identified by company and industry association representatives as being the link in the 3TG mineral supply chain through which these minerals can be traced to their source of origin (mine). The determination of the source of origin is critical to the development of a complete and transparent conflict-free mineral supply chain. Tungsten processing plants were the subject of the first fact sheet in this series published by USGS NMIC in August 2014. Background information about historical conditions and multinational stakeholders’ voluntary due diligence guidance for minerals from conflict-affected and high-risk areas is presented in the tungsten fact sheet. This fact sheet, the second in a series about 3TG minerals, focuses on the tantalum supply chain by listing selected processors that produced tantalum materials commercially worldwide during 2013–14. It does not provide any information regarding the sources of material processed in these facilities.

A new lightweight solar cell

NASA Technical Reports Server (NTRS)

Lindmayer, J.; Wrigley, C.

1976-01-01

Highly reproducible, very thin (40-80 microns thick) silicon solar cells are examined. These cells are the product of silicon thinning techniques that produce very flexible, resilient slices as compared to other techniques. Measurements on solar cells 2 cm by 2 cm by 50 microns thick producing 60 mW or more at AM0 are described. These cells have fine-line metallizations, tantalum oxide antireflection coatings and back-surface aluminum alloy.

Structural changes in graphene oxide thin film by electron-beam irradiation

NASA Astrophysics Data System (ADS)

Tyagi, Chetna; Lakshmi, G. B. V. S.; Kumar, Sunil; Tripathi, Ambuj; Avasthi, D. K.

2016-07-01

Although we have a whole class of 2D materials, graphene has drawn much attention for its excellent electronic, optical, thermal and mechanical properties. Recent researches have shown its large scale production by the reduction of graphene oxide either thermally, chemically or electrochemically. Although the structure of graphene oxide is inhomogeneous and hence complicated due to the presence of organic moieties e.g. epoxy, carboxylic acid, hydroxyl groups etc., its properties can be tuned by reduction according to desired application. The aim of this work is to synthesize continuous thin film of graphene oxide using commercially available graphene oxide solution and to study its reduction by 25 keV electron beam irradiation at fluences varying from 2 × 1011 to 2 × 1013 e-/cm2. Our studies using X-ray diffraction, Raman microscopy and UV-Vis spectroscopy showed that electron-beam irradiation is an effective tool for reduction of graphene oxide and for tuning its band gap.

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

PubMed Central

Dral, A. Petra; Dubbink, David; Nijland, Maarten; ten Elshof, Johan E.; Rijnders, Guus; Koster, Gertjan

2014-01-01

Atomically defined substrate surfaces are prerequisite for the epitaxial growth of complex oxide thin films. In this protocol, two approaches to obtain such surfaces are described. The first approach is the preparation of single terminated perovskite SrTiO3 (001) and DyScO3 (110) substrates. Wet etching was used to selectively remove one of the two possible surface terminations, while an annealing step was used to increase the smoothness of the surface. The resulting single terminated surfaces allow for the heteroepitaxial growth of perovskite oxide thin films with high crystalline quality and well-defined interfaces between substrate and film. In the second approach, seed layers for epitaxial film growth on arbitrary substrates were created by Langmuir-Blodgett (LB) deposition of nanosheets. As model system Ca2Nb3O10- nanosheets were used, prepared by delamination of their layered parent compound HCa2Nb3O10. A key advantage of creating seed layers with nanosheets is that relatively expensive and size-limited single crystalline substrates can be replaced by virtually any substrate material. PMID:25549000

Graphene Oxide/Poly(3-hexylthiophene) Nanocomposite Thin-Film Phototransistor for Logic Circuit Applications

NASA Astrophysics Data System (ADS)

Mansouri, S.; Coskun, B.; El Mir, L.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed; Yakuphanoglu, F.

2018-04-01

Graphene is a sheet-structured material that lacks a forbidden band, being a good candidate for use in radiofrequency applications. We have elaborated graphene-oxide-doped poly(3-hexylthiophene) nanocomposite to increase the interlayer distance and thereby open a large bandgap for use in the field of logic circuits. Graphene oxide/poly(3-hexylthiophene) (GO/P3HT) nanocomposite thin-film transistors (TFTs) were fabricated on silicon oxide substrate by spin coating method. The current-voltage ( I- V) characteristics of TFTs with various P3HT compositions were studied in the dark and under light illumination. The photocurrent, charge carrier mobility, subthreshold voltage, density of interface states, density of occupied states, and I ON/ I OFF ratio of the devices strongly depended on the P3HT weight ratio in the composite. The effects of white-light illumination on the electrical parameters of the transistors were investigated. The results indicated that GO/P3HT nanocomposite thin-film transistors have high potential for use in radiofrequency applications, and their feasibility for use in digital applications has been demonstrated.

Compositional effects in Ru, Pd, Pt, and Rh-doped mesoporous tantalum oxide catalysts for ammonia synthesis.

PubMed

Yue, Chaoyang; Qiu, Longhui; Trudeau, Michel; Antonelli, David

2007-06-11

A series of early metal-promoted Ru-, Pd-, Pt-, and Rh-doped mesoporous tantalum oxide catalysts were synthesized using a variety of dopant ratios and dopant precursors, and the effects of these parameters on the catalytic activity of NH3 synthesis from H2 and N2 were explored. Previous studies on this system supported an unprecedented mechanism in which N-N cleavage occurred at the Ta sites rather than on Ru. The results of the present study showed, for all systems, that Ba is a better promoter than Cs or La and that the nitrate is a superior precursor for Ba than the isopropoxide or the hydroxide. 15N-labeling studies showed that residual nitrate functions as the major ammonia source in the first hour but that it does not account for the ammonia produced after the nitrate is completely consumed. Ru3(CO)12 proved to be a better Ru precursor than RuCl(3).3H2O, and an almost linear increase in activity with increasing Ru loading level was observed at 350 degrees C (623 K). However, at 175 degrees C (448 K), the increase in Ru had no effect on the reaction rate. Pd functioned with comparable rates to Ru, while Pt and Rh functioned far less efficiently. The surprising activities for the Pd-doped catalysts, coupled with XPS evidence for low-valent Ta in this catalyst system, support a mechanism in which cleavage of the N-N triple bond occurs on Ta rather than the precious metal because the Ea value for N-N cleavage on Pd is 2.5 times greater than that for Ru, and the 9.3 kJ mol-1 Ea value measured previously for the Ru system suggests that N-N cleavage cannot occur at the Ru surface.

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

NASA Astrophysics Data System (ADS)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

2012-11-01

The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

Effect of Temperature Cycling and Exposure to Extreme Temperatures on Reliability of Solid Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2007-01-01

In this work, results of multiple temperature cycling (TC) (up to 1,000 cycles) of different types of solid tantalum capacitors are analyzed and reported. Deformation of chip tantalum during temperature variations simulating reflow soldering conditions was measured to evaluate the possibility of the pop-corning effect in the parts. To simulate the effect of short-time exposures to solder reflow temperatures on the reliability of tantalum capacitors, several part types were subjected to multiple cycles (up to 100) between room temperature and 240 C with periodical measurements of electrical characteristics of the parts. Mechanisms of degradation caused by temperature cycling and exposure to high temperatures, and the requirements of MIL-PRF-55365 for assessment of the resistance of the parts to soldering heat are discussed.

CONTRIBUTION TO THE GEOCHEMISTRY OF TANTALUM AND NIOBIUM IN THE HYDROTHERMAL-PNEUMATHOLYTIC PROCESS (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beus, A.A.; Sitnin, A.A.

1961-01-01

S>Data obtained as a result of geochemical investigations show that tantalum and niobium are typical elements of high-temperature postmagmatic processes (early albitization, greysening) connected with granites. The separation of tantalum and niobium in the hydrothermal-pneumatholytic process (greysening stage), which leads to the concentration of tantalum in albitized and greysenized granites (40 to 100 times compared to the average content in granites) is connected with the different mobility and stability of their acido- complex compounds (in particular fluor- and oxyfluorcomplexes), the existence of which in greysening solutions is suggested. A natural analogy in the behavior of both elements in the processesmore » of postmagmatic metasomatose in granites and granitic pegmatites is suggested. (tr-auth)« less

Early/Late Heterobimetallic Tantalum/Rhodium Species Assembled Through a Novel Bifunctional NHC-OH Ligand.

PubMed

Srivastava, Ravi; Moneuse, Raphaël; Petit, Julien; Pavard, Paul-Alexis; Dardun, Vincent; Rivat, Madleen; Schiltz, Pauline; Solari, Marius; Jeanneau, Erwann; Veyre, Laurent; Thieuleux, Chloé; Quadrelli, Elsje Alessandra; Camp, Clément

2018-03-20

The straightforward synthesis of a new unsymmetrical hydroxy-tethered N-heterocyclic carbene (NHC) ligand, HL, is presented. The free ligand exhibits an unusual OH-carbene hydrogen-bonding interaction. This OH-carbene motif was used to yield 1) the first tantalum complex displaying both a Fischer- and Schrock-type carbene ligand and 2) a unique NHC-based early/late heterobimetallic complex. More specifically, the protonolysis chemistry between the ligand's hydroxy group and imido-alkyl or alkylidene-alkyl tantalum precursor complexes yielded the rare monometallic tantalum-NHC complexes [Ta(XtBu)(L)(CH 2 tBu) 2 ] (X=N, CH), in which the alkoxy-carbene ligand acts as a chelate. In contrast, HL only binds to rhodium through the NHC unit in [Rh(HL)(cod)Cl] (cod=cycloocta-1,5-diene), the hydroxy pendant arm remaining unbound. This bifunctional ligand scaffold successfully promoted the assembly of rhodium/tantalum heterobimetallic complexes upon either 1) the insertion of [Rh(cod)Cl] 2 into the Ta-NHC bond in [Ta(NtBu)(L)(CH 2 tBu) 2 ] or 2) protonolysis between the free hydroxy group in [Rh(HL)(cod)Cl] and one alkyl group in [Ta(NtBu)(CH 2 tBu) 3 ]. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hot pressing of nanocrystalline tantalum using high frequency induction heating and pulse plasma sintering

NASA Astrophysics Data System (ADS)

Jakubowicz, J.; Adamek, G.; Sopata, M.; Koper, J. K.; Siwak, P.

2017-12-01

The paper presents the results of nanocrystalline powder tantalum consolidation using hot pressing. The authors used two different heating techniques during hot pressing: high-frequency induction heating (HFIH) and pulse plasma sintering (PPS). A comparison of the structure, microstructure, mechanical properties and corrosion resistance of the bulk nanocrystalline tantalum obtained in both techniques was performed. The nanocrystalline powder was made to start from the microcrystalline one using the high-energy ball milling process. The nanocrystalline powder was hot-pressed at 1000 °C, whereas, for comparison, the microcrystalline powder was hot pressed up to 1500 °C for proper consolidation. The authors found that during hot pressing, the powder partially reacts with the graphite die covered by boron nitride, which facilitated punches and powder displacement in the die during densification. Tantalum carbide and boride in the nanocrystalline material was found, which can improve the mechanical properties. The hardness of the HFIH and PPS nanocrystalline tantalum was as high as 625 and 615 HV, respectively. The microstructure was more uniform in the PPS nanomaterial. The corrosion resistance in both cases deteriorated, in comparison to the microcrystalline material, while the PPS material corrosion resistance was slightly better than that of the HFIH one.

Structure evolution of zinc oxide thin films deposited by unbalance DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aryanto, Didik, E-mail: didi027@lipi.go.id; Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah; Marwoto, Putut

Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 °C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtainedmore » at growth temperature of 400 °C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.« less

The effect of tantalum on the structure/properties of two polycrystalline nickel-base superalloys: B-1900 + Hf MAR-M247. M.S. Thesis, Final Report

NASA Technical Reports Server (NTRS)

Janowski, G. M.

1985-01-01

The microstructure, phase compositions, and phase fractions were studied in conventionally cast B-1900 + Hf and both conventionally cast and directionally solidified MAR-M247 as a function of tantalum concentration. The hot tensile and creep rupture properties of the solutionized and aged MAR-M247-type alloys were also determined as a function of tantalum level. The effects of tantalum on the microstructure and phase compositions of B-1900 + Hf and MAR-M247 (conventionally cast and directionally solidified) were found to be very similar. The addition of tantalum to the as cast and heat treated alloys was shown to cause the partial replacement of the Hf in the MC carbides by Ta, although the degree of replacement was decreased by the solutionizing and aging heat treatment. The gamma prime and minor phase fractions (primarily MC type carbides) both increased approximately linearly with tantalum concentration. The gamma prime phase compositions were relatively insensitive to tantalum variations with the exception of the tantalum and/or hafnium levels. Bulk tantalum additions increased the tantalum, chromium, and cobalt levels of the gamma phase in both alloy series. The increase in the concentrations of the latter two elements in the gamma phase was a result of the decrease in the gamma phase fraction with increasing bulk tantalum concentration and constant gamma/gamma prime partitioning ratio. Tantalum additions increased the yield stress and ultimate tensile strength of the directionally solidified MAR-M247 type alloys and had no significant effect on ductility.

Au Nanoparticle Sub-Monolayers Sandwiched between Sol-Gel Oxide Thin Films

PubMed Central

Della Gaspera, Enrico; Menin, Enrico; Sada, Cinzia

2018-01-01

Sub-monolayers of monodisperse Au colloids with different surface coverage have been embedded in between two different metal oxide thin films, combining sol-gel depositions and proper substrates functionalization processes. The synthetized films were TiO2, ZnO, and NiO. X-ray diffraction shows the crystallinity of all the oxides and verifies the nominal surface coverage of Au colloids. The surface plasmon resonance (SPR) of the metal nanoparticles is affected by both bottom and top oxides: in fact, the SPR peak of Au that is sandwiched between two different oxides is centered between the SPR frequencies of Au sub-monolayers covered with only one oxide, suggesting that Au colloids effectively lay in between the two oxide layers. The desired organization of Au nanoparticles and the morphological structure of the prepared multi-layered structures has been confirmed by Rutherford backscattering spectrometry (RBS), Secondary Ion Mass Spectrometry (SIMS), and Scanning Electron Microscopy (SEM) analyses that show a high quality sandwich structure. The multi-layered structures have been also tested as optical gas sensors. PMID:29538338

Primary human osteoblasts grow into porous tantalum and maintain an osteoblastic phenotype.

PubMed

Welldon, Katie J; Atkins, Gerald J; Howie, Donald W; Findlay, David M

2008-03-01

Porous tantalum (Ta) has found application in orthopedics, although the interaction of human osteoblasts (HOB) with this material has not been reported. The aim of this study was to investigate the interaction of primary HOB with porous tantalum, using 5-mm thick discs of porous tantalum. Comparison was made with discs of solid tantalum and tissue culture plastic. Confocal microscopy was used to investigate the attachment and growth of cells on porous Ta, and showed that HOB attached successfully to the metal "trabeculae," underwent extensive cell division, and penetrated into the Ta pores. The maturation of HOB on porous Ta was determined in terms of cell expression of the osteoblast phenotypic markers, STRO-1, and alkaline phosphatase. Despite some donor-dependent variation in STRO-1/AlkPhos expression, growth of cells grown on porous Ta either promoted, or did not impede, the maturation of HOB. In addition, the expression of key osteoblastic genes was investigated after 14 days of culture. The relative levels of mRNA encoding osteocalcin, osteopontin and receptor activator of NFkappaB ligand (RANKL) was not different between porous or solid Ta or plastic, although these genes were expressed differently by cells of different donors. However, bone sialoprotein and type I collagen mRNA species showed a decreased expression on porous Ta compared with expression on plastic. No substrate-dependent differences were seen in the extent of in vitro mineralization by HOB. These results indicate that porous Ta is a good substrate for the attachment, growth, and differentiated function of HOB. (c) 2007 Wiley Periodicals, Inc.

Leakage Currents and Gas Generation in Advanced Wet Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2015-01-01

Currently, military grade, established reliability wet tantalum capacitors are among the most reliable parts used for space applications. This has been achieved over the years by extensive testing and improvements in design and materials. However, a rapid insertion of new types of advanced, high volumetric efficiency capacitors in space systems without proper testing and analysis of degradation mechanisms might increase risks of failures. The specifics of leakage currents in wet electrolytic capacitors is that the conduction process is associated with electrolysis of electrolyte and gas generation resulting in building up of internal gas pressure in the parts. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. In this work, in Part I, leakages currents in various types of tantalum capacitors have been analyzed in a wide range of voltages, temperatures, and time under bias. Gas generation and the level of internal pressure have been calculated in Part II for different case sizes and different hermeticity leak rates to assess maximal allowable leakage currents. Effects related to electrolyte penetration to the glass seal area have been studied and the possibility of failures analyzed in Part III. Recommendations for screening and qualification to reduce risks of failures have been suggested.

Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

NASA Astrophysics Data System (ADS)

Ali, N. I. Mohd; Misran, N.; Mansor, M. F.; Jamlos, M. F.

2017-05-01

This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified.

Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ong, Hui-Yng; School of Engineering, Nanyang Polytechnic, Singapore 569830; Shrestha, Milan

2015-09-28

Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

Epitaxial thinning process

NASA Technical Reports Server (NTRS)

Siegel, C. M. (Inventor)

1984-01-01

A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

Effect of Mechanical Stresses on Characteristics of Chip Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2007-01-01

The effect of compressive mechanical stresses on chip solid tantalum capacitors is investigated by monitoring characteristics of different part types under axial and hydrostatic stresses. Depending on part types, an exponential increase of leakage currents was observed when stresses exceeded 10 MPa to 40 MPa. For the first time, reversible variations of leakage currents (up to two orders of magnitude) with stress have been demonstrated. Mechanical stresses did not cause significant changes of AC characteristics of the capacitors, whereas breakdown voltages measured during the surge current testing decreased substantially indicating an increased probability of failures of stressed capacitors in low impedance applications. Variations of leakage currents are explained by a combination of two mechanisms: stress-induced scintillations and stress-induced generation of electron traps in the tantalum pentoxide dielectric.

Swift heavy ion induced topography changes of Tin oxide thin films

NASA Astrophysics Data System (ADS)

Jaiswal, Manoj K.; Kumar, Avesh; Kanjilal, D.; Mohanty, T.

2012-12-01

Monodisperse tin oxide nanocrystalline thin films are grown on silicon substrates by electron beam evaporation method followed by 100 MeV silver ion bombardment with varying ion fluence from 5 × 1011 ions cm-2 to 1 × 1013 ions cm-2 at constant ion flux. Enhancement of crystallinity of thin films with fluence is observed from glancing angle X-ray diffraction studies. Morphological studies by atomic force microscopy reveal the changes in grain size from 25 nm to 44 nm with variation in ion fluence. The effect of initial surface roughness and adatom mobility on topography is reported. In this work correlation between ion beam induced defect concentration with topography and grain size distribution is emphasized.

Work function and quantum efficiency study of metal oxide thin films on Ag(100)

NASA Astrophysics Data System (ADS)

Chang, V.; Noakes, T. C. Q.; Harrison, N. M.

2018-04-01

Increasing the quantum efficiency (QE) of metal photocathodes is in the design and development of photocathodes for free-electron laser applications. The growth of metal oxide thin films on certain metal surfaces has previously been shown to reduce the work function (WF). Using a photoemission model B. Camino et al. [Comput. Mater. Sci. 122, 331 (2016), 10.1016/j.commatsci.2016.05.025] based on the three-step model combined with density functional theory calculations we predict that the growth of a finite number of MgO(100) or BaO(100) layers on the Ag(100) surface increases significantly the QE compared with the clean Ag(100) surface for a photon energy of 4.7 eV. Different mechanisms for affecting the QE are identified for the different metal oxide thin films. The addition of MgO(100) increases the QE due to the reduction of the WF and the direct excitation of electrons from the Ag surface to the MgO conduction band. For BaO(100) thin films, an additional mechanism is in operation as the oxide film also photoemits at this energy. We also note that a significant increase in the QE for photons with an energy of a few eV above the WF is achieved due to an increase in the inelastic mean-free path of the electrons.

Use of a Tantalum Liner to Reduce Bore Erosion and Increase Muzzle Velocity in Two-Stage Light Gas Guns

NASA Technical Reports Server (NTRS)

Bogdanoff, David W.

2015-01-01

Muzzle velocities and gun erosion predicted by earlier numerical simulations of two stage light gas guns with steel gun tubes were in good agreement with experimental values. In a subsequent study, simulations of high performance shots were repeated with rhenium (Re) gun tubes. Large increases in muzzle velocity (2 - 4 km/sec) were predicted for Re tubes. In addition, the hydrogen-produced gun tube erosion was, in general, predicted to be zero with Re tubes. Tantalum (Ta) has some mechanical properties superior to those of Re. Tantalum has a lower modulus of elasticity than Re for better force transmission from the refractory metal liner to an underlying thick wall steel tube. Tantalum also has greater ductility than Re for better survivability during severe stress/strain cycles. Also, tantalum has been used as a coating or liner in military powder guns with encouraging results. Tantalum has, however, somewhat inferior thermal properties to those of rhenium, with a lower melting point and lower density and thermal conductivity. The present study was undertaken to see to what degree the muzzle velocity gains of rhenium gun tubes (over steel tubes) could be achieved with tantalum gun tubes. Nine high performance shots were modeled with a new version of our CFD gun code for steel, rhenium and tantalum gun tubes. For all except the highest velocity shot, the results with Ta tubes were nearly identical with those for Re tubes. Even for the highest velocity shot, the muzzle velocity gain over a steel tube using Ta was 82% of the gain obtained using Re. Thus, the somewhat inferior thermal properties of Ta (when compared to those of Re) translate into only very slightly poorer overall muzzle velocity performance. When this fact is combined with the superior mechanical properties of Ta and the encouraging performance of Ta liners/coatings in military powder guns, tantalum is to be preferred over Re as a liner/coating material for two stage light gas guns to increase muzzle

Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering

NASA Astrophysics Data System (ADS)

Kim, J.-Y.; Nielsen, M. C.; Rymaszewski, E. J.; Lu, T.-M.

2000-02-01

Room temperature deposition of tantalum oxide films on metallized silicon substrates was investigated by reactive pulsed magnetron sputtering of Ta in an Ar/O2 ambient. The dielectric constant of the tantalum oxide ranged from 19 to 31 depending on the oxygen percentage [P(%)=PO2/(PO2+PAr)] used during sputtering. The leakage current density was less than 10 nA/cm2 at 0.5 MV/cm electric field and the dielectric breakdown field was greater than 3.8 MV/cm for P=60%. A charge storage as high as 3.3 μF/cm2 was achieved for 70-Å-thick film. Pulse frequency variation (from 20 to 200 kHz) did not give a significant effect in the electrical properties (dielectric constant or leakage current density) of the Ta2O5 films.

Evaluation of Ferrite Chip Beads as Surge Current Limiters in Circuits with Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2014-01-01

Limiting resistors are currently required to be connected in series with tantalum capacitors to reduce the risk of surge current failures. However, application of limiting resistors decreases substantially the efficiency of the power supply systems. An ideal surge current limiting device should have a negligible resistance for DC currents and high resistance at frequencies corresponding to transients in tantalum capacitors. This work evaluates the possibility of using chip ferrite beads (FB) as such devices. Twelve types of small size FBs from three manufacturers were used to evaluate their robustness under soldering stresses and at high surge current spikes associated with transients in tantalum capacitors. Results show that FBs are capable to withstand current pulses that are substantially greater than the specified current limits. However, due to a sharp decrease of impedance with current, FBs do not reduce surge currents to the required level that can be achieved with regular resistors.

Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors

PubMed Central

Zhang, Xue; Lee, Hyeonju; Kim, Jungwon; Kim, Eui-Jik; Park, Jaehoon

2017-01-01

We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide) and 0.30 (Sn oxide) to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol) for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0):Sn(0.9) oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm2/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance. PMID:29283408

Multi-layer thin-film electrolytes for metal supported solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Haydn, Markus; Ortner, Kai; Franco, Thomas; Uhlenbruck, Sven; Menzler, Norbert H.; Stöver, Detlev; Bräuer, Günter; Venskutonis, Andreas; Sigl, Lorenz S.; Buchkremer, Hans-Peter; Vaßen, Robert

2014-06-01

A key to the development of metal-supported solid oxide fuel cells (MSCs) is the manufacturing of gas-tight thin-film electrolytes, which separate the cathode from the anode. This paper focuses the electrolyte manufacturing on the basis of 8YSZ (8 mol.-% Y2O3 stabilized ZrO2). The electrolyte layers are applied by a physical vapor deposition (PVD) gas flow sputtering (GFS) process. The gas-tightness of the electrolyte is significantly improved when sequential oxidic and metallic thin-film multi-layers are deposited, which interrupt the columnar grain structure of single-layer electrolytes. Such electrolytes with two or eight oxide/metal layers and a total thickness of about 4 μm obtain leakage rates of less than 3 × 10-4 hPa dm3 s-1 cm-2 (Δp: 100 hPa) at room temperature and therefore fulfill the gas tightness requirements. They are also highly tolerant with respect to surface flaws and particulate impurities which can be present on the graded anode underground. MSC cell tests with double-layer and multilayer electrolytes feature high power densities more than 1.4 W cm-2 at 850 °C and underline the high potential of MSC cells.

Tantalum-containing catalyst useful for producing alcohols from synthesis gas

DOEpatents

Kinkade, Nancy E.

1991-01-01

A catalyst useful for selectively converting a mixture of carbon monoxide and hydrogen to a mixture of lower alkanols consisting essentially of a mixture of molybdenum sulfide, an alkali metal compound and a tantalum compound.

Tantalum-containing catalyst useful for producing alcohols from synthesis gas

DOEpatents

Kinkade, Nancy E.

1992-01-01

A catalyst useful for selectively converting a mixture of carbon monoxide and hydrogen to a mixture of lower alkanols consisting essentially of a mixture of molybdenum sulfide, an alkali metal compound and a tantalum compound.

Tantalum Sulfide Nanosheets as a Theranostic Nanoplatform for Computed Tomography Imaging-Guided Combinatorial Chemo-Photothermal Therapy.

PubMed

Liu, Yanlan; Ji, Xiaoyuan; Liu, Jianhua; Tong, Winnie W L; Askhatova, Diana; Shi, Jinjun

2017-10-19

Near-infrared (NIR)-absorbing metal-based nanomaterials have shown tremendous potential for cancer therapy, given their facile and controllable synthesis, efficient photothermal conversion, capability of spatiotemporal-controlled drug delivery, and intrinsic imaging function. Tantalum (Ta) is among the most biocompatible metals and arouses negligible adverse biological responses in either oxidized or reduced forms, and thus Ta-derived nanomaterials represent promising candidates for biomedical applications. However, Ta-based nanomaterials by themselves have not been explored for NIR-mediated photothermal ablation therapy. In this work, we report an innovative Ta-based multifunctional nanoplatform composed of biocompatible tantalum sulfide (TaS 2 ) nanosheets (NSs) for simultaneous NIR hyperthermia, drug delivery, and computed tomography (CT) imaging. The TaS 2 NSs exhibit multiple unique features including (i) efficient NIR light-to-heat conversion with a high photothermal conversion efficiency of 39%. (ii) high drug loading (177% by weight), (iii) controlled drug release triggered by NIR light and moderate acidic pH, (iv) high tumor accumulation via heat-enhanced tumor vascular permeability, (v) complete tumor ablation and negligible side effects, and (vi) comparable CT imaging contrast efficiency to the widely clinically used agent iobitridol. We expect that this multifunctional NS platform can serve as a promising candidate for imaging-guided cancer therapy and selection of cancer patients with high tumor accumulation.

Combinatorial study of zinc tin oxide thin-film transistors

NASA Astrophysics Data System (ADS)

McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

2008-01-01

Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO :SnO2 ratio of the film varies as a function of position on the sample, from pure ZnO to SnO2, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2to12cm2/Vs, with two peaks in mobility in devices at ZnO fractions of 0.80±0.03 and 0.25±0.05, and on/off ratios as high as 107. Transistors composed predominantly of SnO2 were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

Pulsed laser deposited metal oxide thin films mediated controlled adsorption of proteins

NASA Astrophysics Data System (ADS)

Kim, Se Jin

Several metal oxide thin films were grown on Si substrate by pulsed laser deposition for controlling adsorption of proteins. No intentional heating of substrate and introduction of oxygen gas during growth were employed. Additionally, fibrinogen, bovine serum albumin (BSA), and lysozyme were used as model protein in this study. The film properties such as cyratllinity, surface roughness, surface electrical charge and chemistry were investigated by many techniques in order to obtain the relationship with protein adsorption. Firstly, as grown Ta2O5 and ZnO thin film were used to study the effects of surface charge on the behaviors of BSA and lysozyme adsorption. The protein thickness results by ellipsometry showed that negatively charged Ta2O5 had a stronger affinity to positively charged lysozyme, while positively charged ZnO had a stronger affinity to negatively charged BSA. The results confirmed electrostatic interaction due to surface charge is one of main factors for determining adsorption of proteins. Furthermore, annealing studies were performed by heat treatment of as grown Ta2O5 and ZnO at 800°C in air ambience. Annealed Ta2O5 thin film had almost wetting property (from 10.02° to less than 1˜2°) and the change of cystallinity (from amorphous to cyrsalline) while annealed ZnO thin film had a reduced contact angle (from 75.65° to 39.41°) and remained to crystalline structure. The fibrinogen thickness on annealed Ta2O5 film was increased compared with as grown sample, while heat treated ZnO film showed much reduction of fibrinogen adsorption. Binary Ta-Zn oxide thin films (TZ) were grown by preparing PLD target composed of 50 wt% Ta2O5 and 50 wt% ZnO. This binary film had IEP pH 7.1 indicating nearly neutral charge in pH 7.4 PBS solution, and hydrophilic property. Ellipsometrical results showed that TZ film had the lowest fibrinogen, BSA and lysozyme thickness after 120 min adsorption compared with Ta2O5 and ZnO. Other samples, bilayer oxide films in

Plasma assisted facile synthesis of vanadium oxide (V3O7) nanostructured thin films

NASA Astrophysics Data System (ADS)

Singh, Megha; Saini, Sujit K.; Kumar, Prabhat; Sharma, Rabindar K.; Reddy, G. B.

2018-05-01

Vanadium oxides nanostructured thin films are synthesized using plasma assisted sublimation process. The effect of temperatures on growth of V2O5 and V3O7 thin films is studied. Scanning electron micrographs shows different morphologies are obtained at different temperatures i.e. at 450 °C nano cubes-like structures are obtained, whereas at 550 °C and 650 °C nanorods are obtained. Sample deposited at 450 °C is entirely composed of V2O5 and sample at higher temperatures are composed of mixed phase of vanadium oxides i.e. V2O5 and V3O7. As temperature increased, so the content of V3O7 in the sample is increased as confirmed by XRD and Raman analyses.

Studies on nickel-tungsten oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Usha, K. S.; Sivakumar, R., E-mail: krsivakumar1979@yahoo.com; Sanjeeviraja, C.

2014-10-15

Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup −1} and 1100 cm{sup −1} correspond to Ni-O vibration and the peak at 860 cm{sup −1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created duemore » to the addition of tungsten, respectively.« less

Transparent and Flexible Zinc Tin Oxide Thin Film Transistors and Inverters using Low-pressure Oxygen Annealing Process

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Kim, Jiwan; Oh, Min Suk

2018-05-01

We report on the transparent and flexible enhancement-load inverters which consist of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated at low process temperature. To control the electrical characteristics of oxide TFTs by oxygen vacancies, we applied low-pressure oxygen rapid thermal annealing (RTA) process to our devices. When we annealed the ZTO TFTs in oxygen ambient of 2 Torr, they showed better electrical characteristics than those of the devices annealed in the air ambient of 760 Torr. To realize oxide thin film transistor and simple inverter circuits on flexible substrate, we annealed the devices in O2 of 2 Torr at 150° C and could achieve the decent electrical properties. When we used transparent conductive oxide electrodes such as indium zinc oxide (IZO) and indium tin oxide (ITO), our transparent and flexible inverter showed the total transmittance of 68% in the visible range and the voltage gain of 5. And the transition voltage in voltage transfer curve was located well within the range of operation voltage.

Method for Fabricating Miniaturized NiTi Self-Expandable Thin Film Devices with Increased Radiopacity

NASA Astrophysics Data System (ADS)

Bechtold, Christoph; Lima de Miranda, Rodrigo; Chluba, Christoph; Zamponi, Christiane; Quandt, Eckhard

2016-12-01

Nitinol is the material of choice for many medical applications, in particular for minimally invasive implants due to its superelasticity and biocompatibility. However, NiTi has limited radiopacity which complicates positioning in the body. A common strategy to increase the radiopacity of NiTi devices is the addition of radiopaque markers by micro-riveting or micro-welding. The recent trend of miniaturizing medical devices, however, reduces their radiopacity further, and makes the addition of radiopaque markers to these miniaturized devices difficult. NiTi thin film technology has great potential to overcome such limitations and to fabricate new generations of miniaturized, self-expandable NiTi medical devices with additional functionalities, such as structured multilayer devices with increased radiopacity. For this purpose, we have produced superelastic thin film NiTi samples covered locally with Tantalum structures of different thickness and different shape. These multilayer devices were characterized regarding their mechanical and corrosion properties as well as their X-ray visibility. The superelastic behavior of the underlying NiTi layer is impeded by the Ta layer, and shows therefore a dependence on the Tantalum patterning geometry and thickness. No delamination was observed after mechanical and corrosion tests. The multilayers reveal excellent corrosion resistance, as well as a significant increase in radiopacity.

Heat Treatment of Tantalum and Niobium Powders Prepared by Magnesium-Thermic Reduction

NASA Astrophysics Data System (ADS)

Orlov, V. M.; Prokhorova, T. Yu.

2017-11-01

Changes in the specific surface area and porous structure of tantalum and niobium powders, which were prepared by magnesium-thermic reduction of Ta2O5, Mg4Ta2O9, and Mg4Nb2O9 oxide compounds and subjected to heat treatments at temperatures of 600-1500°C, have been studied. It is noted that, owing to the mesoporous structure of the magnesium-thermic powders, the decrease in the surface area during heat treatment, first of all, is related to a decrease in the amount of pores less than 10 nm in size. The heat treatment of a reacting mass is shown to allow us to correct the specific surface area of the powder without any increase in the oxygen content in it. Data on the effect of heat treatment conditions on the specific charge of capacitor anodes are reported.

Inferring Strength of Tantalum from Hydrodynamic Instability Recovery Experiments

NASA Astrophysics Data System (ADS)

Sternberger, Z.; Maddox, B.; Opachich, Y.; Wehrenberg, C.; Kraus, R.; Remington, B.; Randall, G.; Farrell, M.; Ravichandran, G.

2018-05-01

Hydrodynamic instability experiments allow access to material properties at extreme conditions, where strain rates exceed 105 s-1 and pressures reach 100 GPa. Current hydrodynamic instability experimental methods require in-flight radiography to image the instability growth at high pressure and high strain rate, limiting the facilities where these experiments can be performed. An alternate approach, recovering the sample after loading, allows measurement of the instability growth with profilometry. Tantalum samples were manufactured with different 2D and 3D initial perturbation patterns and dynamically compressed by a blast wave generated by laser ablation. The samples were recovered from peak pressures between 30 and 120 GPa and strain rates on the order of 107 s-1, providing a record of the growth of the perturbations due to hydrodynamic instability. These records are useful validation points for hydrocode simulations using models of material strength at high strain rate. Recovered tantalum samples were analyzed, providing an estimate of the strength of the material at high pressure and strain rate.

Pulsed—Laser Deposition Of Oxide Thin Films And Laser—Induced Breakdown Spectroscopy Of Multi—Element Materials

NASA Astrophysics Data System (ADS)

Pedarnig, Johannes D.

2010-10-01

New results of the Linz group on pulsed—laser deposition (PLD) of oxide thin films and on laser—induced breakdown spectroscopy (LIBS) of multi-element materials are reported. High-Tc superconducting (HTS) films with enhanced critical current density Jc are produced by laser ablation of novel nano-composite ceramic targets. The targets contain insulating nano-particles that are embedded into the YBa2Cu3O7 matrix. Epitaxial double-layers of lithium-doped and aluminum-doped ZnO are deposited on r-cut sapphire substrates. Acoustic over-modes in the GHz range are excited by piezoelectric actuation of layers. Smooth films of rare-earth doped glass are produced by F2—laser ablation. The transport properties of HTS thin films are modified by light—ion irradiation. Thin film nano—patterning is achieved by masked ion beam irradiation. LIBS is employed to analyze trace elements in industrial iron oxide powder and reference polymer materials. Various trace elements of ppm concentration are measured in the UV/VIS and vacuum-UV spectral range. Quantitative LIBS analysis of major components in oxide materials is performed by calibration-free methods.

Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.

2014-04-01

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Binder-free manganese oxide/carbon nanomaterials thin film electrode for supercapacitors.

PubMed

Wang, Ning; Wu, Chuxin; Li, Jiaxin; Dong, Guofa; Guan, Lunhui

2011-11-01

A ternary thin film electrode was created by coating manganese oxide onto a network composed of single-walled carbon nanotubes and single-walled carbon nanohorns. The electrode exhibited a porous structure, which is a promising architecture for supercapacitors applications. The maximum specific capacitances of 357 F/g for total electrode at 1 A/g were achieved in 0.1 M Na(2)SO(4) aqueous solution.

Fluorine and oxygen plasma influence on nanoparticle formation and aggregation in metal oxide thin film transistors

NASA Astrophysics Data System (ADS)

MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

2017-03-01

Despite recent advances in metal oxide thin-film transistor technology, there are no foundry processes available yet for large-scale deployment of metal oxide electronics and photonics, in a similar way as found for silicon based electronics and photonics. One of the biggest challenges of the metal oxide platform is the stability of the fabricated devices. Also, there is wide dispersion on the measured specifications of fabricated TFT, from lot-to-lot and from different research groups. This can be partially explained by the importance of the deposition method and its parameters, which determine thin film microstructure and thus its electrical properties. Furthermore, substrate pretreatment is an important factor, as it may act as a template for material growth. Not so often mentioned, plasma processes can also affect the morphology of deposited films on further deposition steps, such as inducing nanoparticle formation, which strongly impact the conduction mechanism in the channel layer of the TFT. In this study, molybdenum doped indium oxide is sputtered onto ALD deposited HfO2 with or without pattering, and etched by RIE chlorine based processing. Nanoparticle formation is observed when photoresist is removed by oxygen plasma ashing. HfO2 etching in CF4/Ar plasma prior to resist stripping in oxygen plasma promotes the aggregation of nanoparticles into nanosized branched structures. Such nanostructuring is absent when oxygen plasma steps are replaced by chemical wet processing with acetone. Finally, in order to understand the electronic transport effect of the nanoparticles on metal oxide thin film transistors, TFT have been fabricated and electrically characterized.

Evaluation of Polymer Hermetically Sealed Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Polymer cathode tantalum capacitors have lower ESR (equivalent series resistance) compared to other types of tantalum capacitors and for this reason have gained popularity in the electronics design community. Their use allows improved performance of power supply systems along with substantial reduction of size and weight of the components used. However, these parts have poor thermal stability and can degrade in humid environments. Polymer hermetically sealed (PHS) capacitors avoid problems related to environmental degradation of molded case parts and can potentially replace current wet and solid hermetically sealed capacitors. In this work, PHS capacitors manufactured per DLA LAM DWG#13030 are evaluated for space applications. Several lots of capacitors manufactured over period from 2010 to 2014 were tested for the consistency of performance, electrical and thermal characteristics, highly accelerated life testing, and robustness under reverse bias and random vibration conditions. Special attention was given to analysis of leakage currents and the effect of long-term high temperature storage on capacitors in as is condition and after hermeticity loss. The results show that PHS capacitors might be especially effective for low-temperature applications or for system requiring a cold start-up. Additional screening and qualification testing have been recommended to assure the necessary quality of capacitors for space projects.

Improved Stability and Performance of Visible Photoelectrochemical Water Splitting on Solution-Processed Organic Semiconductor Thin Films by Ultrathin Metal Oxide Passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lei; Yan, Danhua; Shaffer, David W.

Solution-processable organic semiconductors have potentials as visible photoelectrochemical (PEC) water splitting photoelectrodes due to their tunable small band gap and electronic energy levels, but they are typically limited by poor stability and photocatalytic activity. In this study, we demonstrate the direct visible PEC water oxidation on solution-processed organic semiconductor thin films with improved stability and performance by ultrathin metal oxide passivation layers. N-type fullerene-derivative thin films passivated by sub-2 nm ZnO via atomic layer deposition enabled the visible PEC water oxidation at wavelengths longer than 600 nm in harsh alkaline electrolyte environments with up to 30 μA/cm 2 photocurrents atmore » the thermodynamic water-oxidation equilibrium potential and the photoanode half-lifetime extended to ~1000 s. The systematic investigation reveals the enhanced water oxidation catalytic activity afforded by ZnO passivation and the charge tunneling governing the hole transfer through passivation layers. Further enhanced PEC performances were realized by improving the bottom ohmic contact to the organic semiconductor, achieving ~60 μA/cm 2 water oxidation photocurrent at the equilibrium potential, the highest values reported for organic semiconductor thin films to our knowledge. The improved stability and performance of passivated organic photoelectrodes and discovered design rationales provide useful guidelines for realizing the stable visible solar PEC water splitting based on organic semiconductor thin films.« less

Improved Stability and Performance of Visible Photoelectrochemical Water Splitting on Solution-Processed Organic Semiconductor Thin Films by Ultrathin Metal Oxide Passivation

DOE PAGES

Wang, Lei; Yan, Danhua; Shaffer, David W.; ...

2017-12-27

Solution-processable organic semiconductors have potentials as visible photoelectrochemical (PEC) water splitting photoelectrodes due to their tunable small band gap and electronic energy levels, but they are typically limited by poor stability and photocatalytic activity. In this study, we demonstrate the direct visible PEC water oxidation on solution-processed organic semiconductor thin films with improved stability and performance by ultrathin metal oxide passivation layers. N-type fullerene-derivative thin films passivated by sub-2 nm ZnO via atomic layer deposition enabled the visible PEC water oxidation at wavelengths longer than 600 nm in harsh alkaline electrolyte environments with up to 30 μA/cm 2 photocurrents atmore » the thermodynamic water-oxidation equilibrium potential and the photoanode half-lifetime extended to ~1000 s. The systematic investigation reveals the enhanced water oxidation catalytic activity afforded by ZnO passivation and the charge tunneling governing the hole transfer through passivation layers. Further enhanced PEC performances were realized by improving the bottom ohmic contact to the organic semiconductor, achieving ~60 μA/cm 2 water oxidation photocurrent at the equilibrium potential, the highest values reported for organic semiconductor thin films to our knowledge. The improved stability and performance of passivated organic photoelectrodes and discovered design rationales provide useful guidelines for realizing the stable visible solar PEC water splitting based on organic semiconductor thin films.« less

Development of a direct patterning method for functional oxide thin films using ultraviolet irradiation and hybrid-cluster gels and its application to thin-film transistor fabrication

NASA Astrophysics Data System (ADS)

Yoshimoto, Yuuki; Li, Jinwang; Shimoda, Tatsuya

2018-04-01

A gel state exists in the solution-solid conversion process. We found that solidification can be promoted by irradiating the gel with ultraviolet (UV) light. In this study, a patterning method without using a vacuum system or employing photoresist materials has been proposed wherein solidification was applied to a gel by UV irradiation. Indium oxide gel, indium gallium oxide gel, lanthanum zirconium oxide gel, and lanthanum ruthenium oxide gels were successfully patterned by using our technique. Moreover, an oxide thin-film transistor was fabricated by our novel patterning method and was successfully operated.

Tantalum-containing catalyst useful for producing alcohols from synthesis gas

DOEpatents

Kinkade, N.E.

1992-04-07

A catalyst is described which is useful for selectively converting a mixture of carbon monoxide and hydrogen to a mixture of lower alkanols. The catalyst consists essentially of a mixture of molybdenum sulfide, an alkali metal compound and a tantalum compound.

Oxidation resistant iron and nickel alloys for high temperature use

NASA Technical Reports Server (NTRS)

Hill, V. L.; Misra, S. K.; Wheaton, H. L.

1970-01-01

Iron-base and nickel-base alloys exhibit good oxidation resistance and improved ductility with addition of small amounts of yttrium, tantalum /or hafnium/, and thorium. They can be used in applications above the operating temperatures of the superalloys, if high strength materials are not required.

Pyroelectricity of silicon-doped hafnium oxide thin films

NASA Astrophysics Data System (ADS)

Jachalke, Sven; Schenk, Tony; Park, Min Hyuk; Schroeder, Uwe; Mikolajick, Thomas; Stöcker, Hartmut; Mehner, Erik; Meyer, Dirk C.

2018-04-01

Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 µC cm-2 and -46.2 µC K-1 m-2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 ° C to 170 ° C , which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications.

The Effects of ph on Structural and Optical Characterization of Iron Oxide Thin Films

NASA Astrophysics Data System (ADS)

Tezel, Fatma Meydaneri; Özdemir, Osman; Kariper, I. Afşin

In this study, the iron oxide thin films have been produced by chemical bath deposition (CBD) method as a function of pH onto amorphous glass substrates. The surface images of the films were investigated with scanning electron microscope (SEM). The crystal structures, orientation of crystallization, crystallite sizes, and dislocation density i.e. structural properties of the thin films were analyzed with X-ray diffraction (XRD). The optical band gap (Eg), optical transmission (T%), reflectivity (R%), absorption coefficient (α), refraction index (n), extinction coefficient (k) and dielectric constant (ɛ) of the thin films were investigated depending on pH, deposition time, solution temperature, substrate temperature, thickness of the films by UV-VIS spectrometer.

Theoretical simulations of protective thin film Fabry-Pérot filters for integrated optical elements of diode pumped alkali lasers (DPAL)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quarrie, L., E-mail: Lindsay.Quarrie@l-3com.com, E-mail: lindsay.o.quarrie@gmail.com; Air Force Research Laboratory, AFRL/RDLC Laser CoE, 3550 Aberdeen Avenue SE, Kirtland AFB, NM 87117-5776

The lifetime of Diode-Pumped Alkali Lasers (DPALs) is limited by damage initiated by reaction of the glass envelope of its gain medium with rubidium vapor. Rubidium is absorbed into the glass and the rubidium cations diffuse through the glass structure, breaking bridging Si-O bonds. A damage-resistant thin film was developed enhancing high-optical transmission at natural rubidium resonance input and output laser beam wavelengths of 780 nm and 795 nm, while protecting the optical windows of the gain cell in a DPAL. The methodology developed here can be readily modified for simulation of expected transmission performance at input pump and outputmore » laser wavelengths using different combination of thin film materials in a DPAL. High coupling efficiency of the light through the gas cell was accomplished by matching the air-glass and glass-gas interfaces at the appropriate wavelengths using a dielectric stack of high and low index of refraction materials selected to work at the laser energies and protected from the alkali metal vapor in the gain cell. Thin films as oxides of aluminum, zirconium, tantalum, and silicon were selected allowing the creation of Fabry-Perot optical filters on the optical windows achieving close to 100% laser transmission in a solid optic combination of window and highly reflective mirror. This approach allows for the development of a new whole solid optic laser.« less

Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods

NASA Astrophysics Data System (ADS)

Mishima, K.; Murakami, H.; Ohta, A.; Sahari, S. K.; Fujioka, T.; Higashi, S.; Miyazaki, S.

2013-03-01

Atomic layer deposition (ALD) and Layer-by-Layer deposition of Ta-oxide films on Ge(100) with using tris (tert-butoxy) (tert-butylimido) tantalum have been studied systematically. From the analysis of the chemical bonding features of the interface between TaOx and Ge(100) using x-ray photoelectron spectroscopy (XPS), Ge atom diffusion into the Ta oxide layer and resultant TaGexOy formation during deposition at temperatures higher than 200°C were confirmed. Also, we have demonstrated that nanometer-thick deposition of Tantalum oxide as an interfacial layer effectively suppresses the formation of GeOx in the HfO2 ALD on Ge. By the combination of TaOx pre-deposition on Ge(100) and subsequent ALD of HfO2, a capacitance equivalent thickness (CET) of 1.35 nm and relative dielectric constant of 23 were achieved.

A study of the initial oxidation of evaporated thin films of aluminum by AES, ELS, and ESD

NASA Technical Reports Server (NTRS)

Bujor, M.; Larson, L. A.; Poppa, H.

1982-01-01

The room temperature, low pressure, oxidation of evaporated aluminum thin films has been studied by AES, ELS, and ESD. ESD was the most sensitive of the three methods to characterize a clean aluminum surface. Two oxidation stages were distinguished in the 0-3000 L oxygen exposure range. Between 0 and 50 L, the chemisorption of oxygen atoms was characterized by a fast decrease of the 67 eV AES Al peak and the 10 eV surface plasmon peak, and by a simultaneous increase of the oxygen AES and ESD signals. After 50 L, a change in slope in all AES and ESD signal variations was attributed to the slow growth of a thin layer of aluminum oxide, which after 3000 L was still only a few angstroms thick.

Stable indium oxide thin-film transistors with fast threshold voltage recovery

NASA Astrophysics Data System (ADS)

Vygranenko, Yuriy; Wang, Kai; Nathan, Arokia

2007-12-01

Stable thin-film transistors (TFTs) with semiconducting indium oxide channel and silicon dioxide gate dielectric were fabricated by reactive ion beam assisted evaporation and plasma-enhanced chemical vapor deposition. The field-effect mobility is 3.3cm2/Vs, along with an on/off current ratio of 106, and subthreshold slope of 0.5V/decade. When subject to long-term gate bias stress, the TFTs show fast recovery of the threshold voltage (VT) when relaxed without annealing, suggesting that charge trapping at the interface and/or in the bulk gate dielectric to be the dominant mechanism underlying VT instability. Device performance and stability make indium oxide TFTs promising for display applications.

Tuning the properties of tin oxide thin films for device fabrications

NASA Astrophysics Data System (ADS)

Sudha, A.; Sharma, S. L.; Gupta, A. N.; Sharma, S. D.

2017-11-01

Tin oxide thin films were deposited on well cleaned glass substrates by thermal evaporation in vacuum and were annealed at 500 ∘C in the open atmosphere inside a furnace for 90 min for promoting the sensitivity of the films. The X-ray diffraction studies revealed that the as-deposited films were amorphous in nature and the annealed films showed appreciable crystalline behavior. The annealed thin films were then irradiated using 60Co gamma source. The radiation induced changes were then studied by X-ray diffraction, scanning electron microscopy, UV-vis spectroscopy and I- V characterization. The remarkable increase in the average grain size, the decrement in the energy band gap and resistivity due to the gamma irradiations up to a certain dose and the reversal of these properties at higher doses are the important observations. The large changes in the conductivity and energy band gap of the annealed thin films due to gamma irradiation make these films quite important device material for the fabrication of gamma sensors and dosimeters.

Synthesis and characterization of homo- and heterobimetallic niobium v and tantalum v peroxo-polyaminocarboxylato complexes and their use as single or multiple molecular precursors for Nb-Ta mixed oxides

NASA Astrophysics Data System (ADS)

Bayot, Daisy; Degand, Matthieu; Devillers, Michel

2005-09-01

New water-soluble bimetallic peroxo complexes of niobium V and/or tantalum V with high-denticity polyaminocarboxylate ligands have been prepared, characterized from the spectroscopic point of view, and used as molecular precursors for Nb-Ta mixed oxides. Four new homobimetallic complexes, (gu) 3[Nb 2(O 2) 4(dtpaO 3)]·3H 2O 1, (gu) 3[Ta 2(O 2) 4(dtpaO 3)]·5H 2O 2, (gu) 3[Nb 2(O 2) 4(HtthaO 4)]·2H 2O 4 and (gu) 3[Ta 2(O 2) 4(HtthaO 4)]·3H 2O 5 and the corresponding heterometallic complexes, (gu) 3[NbTa(O 2) 4(dtpaO 3)]·2.5H 2O 3 and (gu) 3[NbTa(O 2) 4(HtthaO 4)]·2H 2O 6 have been obtained. In these compounds, the in situ oxidation of the nitrogen atoms of the PAC ligands into N-oxide groups has been evidenced by IR spectroscopy and mass spectrometry. The thermal treatment of the homonuclear complexes in air at 700 or 800 °C, depending on the Ta content, provided Nb 2O 5 or Ta 2O 5 while the heteronuclear compounds led to the solid solution TaNbO 5. BET and SEM measurements have been carried out and comparison of the morphology of the samples prepared from homo- and heterometallic precursors is discussed.

Frequency spectrum of tantalum at temperatures of 293-2300 K

NASA Astrophysics Data System (ADS)

Semenov, V. A.; Kozlov, Zh. A.; Krachun, L.; Mateescu, G.; Morozov, V. M.; Oprea, A. I.; Oprea, K.; Puchkov, A. V.

2010-05-01

The temperature dependence of the frequency spectrum of tantalum in the temperature range from room temperature to 2300 K has been studied for the first time using inelastic slow-neutron scattering. The inelastic slow-neutron scattering spectra have been measured at different temperatures on a DIN-2PI time-of-flight spectrometer installed at the IBR-2 nuclear reactor (Joint Institute for Nuclear Research, Dubna, Russia) with the use of a TS3000K high-temperature thermostat. From the measured spectra, the frequency spectra of the tantalum crystal lattice have been determined at temperatures of 293, 1584, and 2300 K by the iteration method. As the temperature increases, the frequency spectrum, on the whole, is softened and the specific features manifested themselves at room temperature are smoothed. The variations observed have been explained by the increase in the role of the effects of vibration anharmonism at high temperatures.

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio

2014-10-20

To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizingmore » controllable high-performance stable transistors.« less

Atomization from a tantalum surface in graphite furnace atomic absorption spectrometry

NASA Astrophysics Data System (ADS)

Gregoire, D. C.; Chakrabarti, C. L.

The mechanism of atom formation of U, V, Mo, Ni, Mn, Cu and Mg atomized from pyrolytic graphite and tantalum metal surfaces has been studied. The mechanism of atom formation for U from a graphite tube atomizer is reported for the first time. The peak absorbance for U and Cu is increased by factors of 59.7 and 2.0, respectively, whereas that of V, Mo and Ni is reduced by several orders of magnitude when they are atomized from a tantalum metal surface. The peak absorbance of Mn and Mg is not appreciably affected by the material of the atomization surface. Interaction of Mn and Mg with the graphite surface and formation of their refractory carbides was found to be negligible. Uranium forms a refractory carbide when heated from a graphite surface.

Oxidation of atomically thin MoS2 on SiO2

NASA Astrophysics Data System (ADS)

Yamamoto, Mahito; Cullen, William; Einstein, Theodore; Fuhrer, Michael

2013-03-01

Surface oxidation of MoS2 markedly affects its electronic, optical, and tribological properties. However, oxidative reactivity of atomically thin MoS2 has yet to be addressed. Here, we investigate oxidation of atomic layers of MoS2 using atomic force microscopy and Raman spectroscopy. MoS2 is mechanically exfoliated onto SiO2 and oxidized in Ar/O2 or Ar/O3 (ozone) at 100-450 °C. MoS2 is much more reactive to O2 than an analogous atomic membrane of graphene and monolayer MoS2 is completely etched very rapidly upon O2 treatment above 300 °C. Thicker MoS2 (> 15 nm) transforms into MoO3 after oxidation at 400 °C, which is confirmed by a Raman peak at 820 cm-1. However, few-layer MoS2 oxidized below 400 °C exhibits no MoO3 Raman mode but etch pits are formed, similar to graphene. We find atomic layers of MoS2 shows larger reactivity to O3 than to O2 and monolayer MoS2 transforms chemically upon O3 treatment even below 100 °C. Work supported by the U. of Maryland NSF-MRSEC under Grant No. DMR 05-20741.

Synthesis and characterization of transparent conductive zinc oxide thin films by sol-gel spin coating method

NASA Astrophysics Data System (ADS)

Winarski, David

Zinc oxide has been given much attention recently as it is promising for various semiconductor device applications. ZnO has a direct band gap of 3.3 eV, high exciton binding energy of 60 meV and can exist in various bulk powder and thin film forms for different applications. ZnO is naturally n-type with various structural defects, which sparks further investigation into the material properties. Although there are many potential applications for this ZnO, an overall lack of understand and control of intrinsic defects has proven difficult to obtain consistent, repeatable results. This work studies both synthesis and characterization of zinc oxide in an effort to produce high quality transparent conductive oxides. The sol-gel spin coating method was used to obtain highly transparent ZnO thin films with high UV absorbance. This research develops a new more consistent method for synthesis of these thin films, providing insight for maintaining quality control for each step in the procedure. A sol-gel spin coating technique is optimized, yielding highly transparent polycrystalline ZnO thin films with tunable electrical properties. Annealing treatment in hydrogen and zinc atmospheres is researched in an effort to increase electrical conductivity and better understand intrinsic properties of the material. These treatment have shown significant effects on the properties of ZnO. Characterization of doped and undoped ZnO synthesized by the sol-gel spin coating method was carried out using scanning electron microscopy, UV-Visible range absorbance, X-ray diffraction, and the Hall Effect. Treatment in hydrogen shows an overall decrease in the number of crystal phases and visible absorbance while zinc seems to have the opposite effect. The Hall Effect has shown that both annealing environments increase the n-type conductivity, yielding a ZnO thin film with a carrier concentration as high as 3.001 x 1021 cm-3.

Development of p-type oxide semiconductors based on tin oxide and its alloys: application to thin film transistors

NASA Astrophysics Data System (ADS)

Barros, Ana Raquel Xarouco de

In spite of the recent p-type oxide TFTs developments based on SnOx and CuxO, the results achieved so far refer to devices processed at high temperatures and are limited by a low hole mobility and a low On-Off ratio and still there is no report on p-type oxide TFTs with performance similar to n-type, especially when comparing their field-effect mobility values, which are at least one order of magnitude higher on n-type oxide TFTs. Achieving high performance p-type oxide TFTs will definitely promote a new era for electronics in rigid and flexible substrates, away from silicon. None of the few reported p-channel oxide TFTs is suitable for practical applications, which demand significant improvements in the device engineering to meet the real-world electronic requirements, where low processing temperatures together with high mobility and high On-Off ratio are required for TFT and CMOS applications. The present thesis focuses on the study and optimization of p-type thin film transistors based on oxide semiconductors deposited by r.f. magnetron sputtering without intentional substrate heating. In this work several p-type oxide semiconductors were studied and optimized based on undoped tin oxide, Cu-doped SnOx and In-doped SnO2.

Structural and electrical characteristics of gallium tin oxide thin films prepared by electron cyclotron resonance-metal organic chemical vapor deposition.

PubMed

Park, Ji Hun; Byun, Dongjin; Lee, Joong Kee

2011-08-01

Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nanopolycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 x 10(-3) ohms cm. In our experimental range, the optimized carrier concentration of 3.71 x 10(18) cm(-3) was prepared at the Ga/[O+Sn] mole ratio of 0.35.

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

DOEpatents

Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

1998-05-19

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

DOEpatents

Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

1999-01-01

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

DOEpatents

Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

1998-01-01

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

Ceramic Composite Thin Films

NASA Technical Reports Server (NTRS)

Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

NASA Astrophysics Data System (ADS)

Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

2013-04-01

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition.

PubMed

Sheng, Jiazhen; Lee, Hwan-Jae; Oh, Saeroonter; Park, Jin-Seong

2016-12-14

Amorphous indium zinc oxide (IZO) thin films were deposited at different temperatures, by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (INCA-1) as the indium precursor, diethlzinc (DEZ) as the zinc precursor, and hydrogen peroxide (H 2 O 2 ) as the reactant. The ALD process of IZO deposition was carried by repeated supercycles, including one cycle of indium oxide (In 2 O 3 ) and one cycle of zinc oxide (ZnO). The IZO growth rate deviates from the sum of the respective In 2 O 3 and ZnO growth rates at ALD growth temperatures of 150, 175, and 200 °C. We propose growth temperature-dependent surface reactions during the In 2 O 3 cycle that correspond with the growth-rate results. Thin-film transistors (TFTs) were fabricated with the ALD-grown IZO thin films as the active layer. The amorphous IZO TFTs exhibited high mobility of 42.1 cm 2 V -1 s -1 and good positive bias temperature stress stability. Finally, flexible IZO TFT was successfully fabricated on a polyimide substrate without performance degradation, showing the great potential of ALD-grown TFTs for flexible display applications.

Optical properties of spin-on deposited low temperature titanium oxide thin films

NASA Astrophysics Data System (ADS)

Rantala, J. T.; Kärkkäinen, A. H. O.

2003-06-01

This letter presents a method to fabricate high quality, high refractive index titanium oxide thin films by applying liquid phase spin-on deposition combined with low temperature annealing. The synthesis of the liquid form titanium oxide material is carried out using a sol-gel synthesis technique. The material can be annealed at low temperature (150 C°) to achieve relatively high refractive index of 1.94 at 632.8 nm wavelength, whereas annealing at 350 C° results in index of 2.03 at 632.8 nm. Film depositions are demonstrated on silicon substrates with 0.5% uniformity in thickness. Refractive indices and extinction coefficients are characterized over a broad wavelength range to demonstrate the optical performance of this novel aqueous phase spin-on deposited hybrid titanium oxide material.

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

NASA Astrophysics Data System (ADS)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

2014 NEPP Tasks Update for Ceramic and Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Presentation describes recent development in research on MnO2, wet, and polymer tantalum capacitors. Low-voltage failures in multilayer ceramic capacitors and techniques to reveal precious metal electrode (PME) and base metal electrode (BME) capacitors with cracks are discussed. A voltage breakdown technique is suggested to select high quality low-voltage BME ceramic capacitors.

Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghonge, S.G.; Goo, E.; Ramesh, R.

1994-12-31

TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interfacemore » between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.« less

Design, Fabrication and Characterization of Thin Film Structures through Oxidation Kinetics

NASA Astrophysics Data System (ADS)

Diaz Leon, Juan Jose

Materials science and engineering is devoted to the understanding of the physics and chemistry of materials at the mesoscale and to applying that knowledge into real-life applications. In this work, different oxide materials and different oxidation methods are studied from a materials science point of view and for specific applications. First, the deposition of complex metal oxides is explored for solar energy concentration. This requires a number of multi-cation oxide structures such as thin-film dielectric barriers, low loss waveguides or the use of continuously graded composition oxides for antireflection coatings and light concentration. Then, oxidation via Joule heating is used for the self-alignment of a selector on top of a memristor structure on a nanovia. Simulations are used to explore the necessary voltage for the insulator-to-metal transition temperature of NbO2 using finite element analysis, followed by the fabrication and the characterization of such a device. Finally, long-term copper oxidation at room temperature and pressure is studied using optical techniques. Alternative characterization techniques are used to confirm the growth rate and phase change, and an application of copper oxide as a volatile conductive bridge is shown. All these examples show how the combination of novel simulation, fabrication and characterization techniques can be used to understand physical mechanisms and enable disruptive technologies in fields such as solar cells, light emitting diodes, photodetectors or memory devices.

Tantalum oxide and barium sulfate as radiopacifiers in injectable calcium phosphate-poly(lactic-co-glycolic acid) cements for monitoring in vivo degradation.

PubMed

Hoekstra, Jan Willem M; van den Beucken, Jeroen J J P; Leeuwenburgh, Sander C G; Bronkhorst, Ewald M; Meijer, Gert J; Jansen, John A

2014-01-01

Monitoring the degradation of calcium phosphate-based bone substitute materials in vivo by means of noninvasive techniques (e.g., radiography) is often a problem due to the chemical resemblance of those substitutes with the mineral phase of bone. In the view of that, the present study aimed at enhancing the radiopacity of calcium phosphate cement enriched with poly(lactic-co-glycolic acid) (CPC-PLGA) microspheres, by adding tantalum oxide (Ta2O5) or the more traditional radiopacifier barium sulfate (BaSO4). The radiopacifying capacity of these radiopacifiers was first evaluated in vitro by microcomputed tomography (μCT). Thereafter, both radiopacifiers were tested in vivo using a distal femoral condyle model in rabbits, with subsequent ex vivo μCT analysis in parallel with histomorphometry. Addition of either one of the radiopacifiers proved to enhance radiopacity of CPC-PLGA in vitro. The in vivo experiment showed that both radiopacifiers did not induce alterations in biological performance compared to plain CPC-PLGA, hence both radiopacifiers can be considered safe and biocompatible. The histomorphometrical assessment of cement degradation and bone formation showed similar values for the three experimental groups. Interestingly, μCT analysis showed that monitoring cement degradation becomes feasible upon incorporation of either type of radiopacifier, albeit that BaSO4 showed more accuracy compared to Ta2O5. Copyright © 2013 Wiley Periodicals, Inc., a Wiley Company.

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

2012-02-01

The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

Alkyl group effects on CO insertion into coordinatively unsaturated early-transition-metal alkyls. Preparations and the first structural characterizations of tantalum enolate-O and tantalum. eta. sup 2 -acyl complexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meyer, T.Y.; Garner, L.R.; Baenziger, N.C.

1990-10-03

Low-pressure carbonylation of the mono(peralkylcyclopentadienyl)tantalum(V) alkyls ({eta}-C{sub 5}Me{sub 4}R)TaR{prime}Cl{sub 3} (R = Me, Et; R{prime} = CH{sub 2}C{sub 6}H{sub 4}-p-Me, CH{sub 2}CMe{sub 3}) yields either the O-bound enolate or the {eta}{sup 2}-acyl as shown by ir/NMR spectroscopy and x-ray diffractometry. The p-tolyl enolate ({eta}-C{sub 5}Me{sub 5})Ta(OCH{double bond}CHC{sub 6}H{sub 4}-p-Me)Cl{sub 3}, derived directly from carbonylation of the tantalum 4-methylbenzyl precursor, is shown to possess a cis configuration in solution and in the solid state. Key structural features from a single-crystal x-ray diffraction study of the tetrahydrofuran-ligated enolate complex are reported. The mechanism of formation of the enolate from carbonylation of themore » 4-methylbenzyl complex is discussed. The previously reported acyl ({eta}-C{sub 5}Me{sub 4}R)Ta(C(O)CH{sub 2}CMe{sub 3})Cl{sub 3} has been reexamined and found to possess a symmetric, strongly distorted {eta}{sup 2}-acyl coordination by solution {sup 1}H NMR spectroscopy and solid-state x-ray diffractometry. The molecular structures of ({eta}-C{sub 5}Me{sub 5})Ta(OCH{double bond}CHC{sub 6}H{sub 4}-p-Me)Cl{sub 3} and ({eta}-C{sub 5}Me{sub 5})Ta(C(O)CH{sub 2}CMe{sub 3})Cl{sub 3}, which are reported here, are the first structural determinations of a tantalum enolate and of a tantalum {eta}{sup 2}-acyl. 41 refs., 2 figs., 8 tabs.« less

Parameters controlling microstructures and resistance switching of electrodeposited cuprous oxide thin films

NASA Astrophysics Data System (ADS)

Yazdanparast, Sanaz

2016-12-01

Cuprous oxide (Cu2O) thin films were electrodeposited cathodically from a highly alkaline bath using tartrate as complexing agent. Different microstructures for Cu2O thin films were achieved by varying the applied potential from -0.285 to -0.395 V versus a reference electrode of Ag/AgCl at 50 °C in potentiostatic mode, and separately by changing the bath temperature from 25 to 50 °C in galvanostatic mode. Characterization experiments showed that both grain size and orientation of Cu2O can be controlled by changing the applied potential. Applying a high negative potential of -0.395 V resulted in smaller grain size of Cu2O thin films with a preferred orientation in [111] direction. An increase in the bath temperature in galvanostatic electrodeposition increased the grain size of Cu2O thin films. All the films in Au/Cu2O/Au-Pd cell showed unipolar resistance switching behavior after an initial FORMING process. Increasing the grain size of Cu2O thin films and decreasing the top electrode area increased the FORMING voltage and decreased the current level of high resistance state (HRS). The current in low resistance state (LRS) was independent of the top electrode area and the grain size of deposited films, suggesting a filamentary conduction mechanism in unipolar resistance switching of Cu2O.

Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

PubMed Central

Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel

2013-01-01

We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures. PMID:24113685

Silicon carbide-based hydrogen gas sensors for high-temperature applications.

PubMed

Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel

2013-10-09

We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

Microfabrication of SrRuO3 thin films on various oxide substrates using LaAlO3/BaOx sacrificial bilayers

NASA Astrophysics Data System (ADS)

Harada, Takayuki; Tsukazaki, Atsushi

2018-02-01

Oxides provide various fascinating physical properties that could find use in future device applications. However, the physical properties of oxides are often affected by formation of oxygen vacancies during device fabrication processes. In this study, to develop a damage-free patterning process for oxides, we focus on a lift-off process using a sacrificial template layer, by which we can pattern oxide thin films without severe chemical treatment or plasma bombardment. As oxides need high thin-film growth temperature, a sacrificial template needs to be made of thermally stable and easily etchable materials. To meet these requirements, we develop a sacrificial template with a carefully designed bilayer structure. Combining a thermally and chemically stable LaAlO3 and a water-soluble BaOx, we fabricated a LaAlO3/BaOx sacrificial bilayer. The patterned LaAlO3/BaOx sacrificial bilayers were prepared on oxide substrates by room-temperature pulsed laser deposition and standard photolithography process. The structure of the sacrificial bilayer can be maintained even in rather tough conditions needed for oxide thin film growth: several hundred degrees Celsius under high oxygen pressure. Indeed, the LaAlO3/BaOx bilayer is easily removable by sonication in water. We applied the lift-off method using the LaAlO3/BaOx sacrificial bilayer to a representative oxide conductor SrRuO3 and fabricated micron-scale Hall-bar devices. The SrRuO3 channels with the narrowest line width of 5 μm exhibit an almost identical transport property to that of the pristine film, evidencing that the developed process is beneficial for patterning oxides. We show that the LaAlO3/BaOx lift-off process is applicable to various oxide substrates: SrTiO3, MgO, and Al2O3. The new versatile patterning process will expand the range of application of oxide thin films in electronic and photonic devices.

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

NASA Astrophysics Data System (ADS)

Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

2012-09-01

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

Study of surge current effects on solid tantalum capacitors

NASA Technical Reports Server (NTRS)

1980-01-01

Results are presented of a 2,000 hour cycled life test program conducted to determine the effect of short term surge current screening on approximately 47 micron f/volt solid tantalum capacitors. The format provides average values and standard deviations of the parameters, capacitance, dissipation factor, and equivalent series resistance at 120 Hz, 1KHz, abd 40 KHz.

Growing Oxide Nanowires and Nanowire Networks by Solid State Contact Diffusion into Solution-Processed Thin Films.

PubMed

Glynn, Colm; McNulty, David; Geaney, Hugh; O'Dwyer, Colm

2016-11-01

New techniques to directly grow metal oxide nanowire networks without the need for initial nanoparticle seed deposition or postsynthesis nanowire casting will bridge the gap between bottom-up formation and top-down processing for many electronic, photonic, energy storage, and conversion technologies. Whether etched top-down, or grown from catalyst nanoparticles bottom-up, nanowire growth relies on heterogeneous material seeds. Converting surface oxide films, ubiquitous in the microelectronics industry, to nanowires and nanowire networks by the incorporation of extra species through interdiffusion can provide an alternative deposition method. It is shown that solution-processed thin films of oxides can be converted and recrystallized into nanowires and networks of nanowires by solid-state interdiffusion of ionic species from a mechanically contacted donor substrate. NaVO 3 nanowire networks on smooth Si/SiO 2 and granular fluorine-doped tin oxide surfaces can be formed by low-temperature annealing of a Na diffusion species-containing donor glass to a solution-processed V 2 O 5 thin film, where recrystallization drives nanowire growth according to the crystal habit of the new oxide phase. This technique illustrates a new method for the direct formation of complex metal oxide nanowires on technologically relevant substrates, from smooth semiconductors, to transparent conducting materials and interdigitated device structures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tantalum Addition to Zirconium Diboride for Improved Oxidation Resistance

NASA Technical Reports Server (NTRS)

Levine, Stanley R.; Opila, Eliizabeth J.

2003-01-01

Ultrahigh temperature ceramics have performed unreliably due to material flaws and attachment design. These deficiencies are brought to the fore by the low fracture toughness and thermal shock resistance of UHTCs. If these deficiencies are overcome, we are still faced with poor oxidation resistance as a limitation on UHTC applicability to reusable launch vehicles. We have been addressing the deficiencies of UHTCs with our focus on composite constructions and functional grading to address the mechanical issues, and on composition modification to address the oxidation issue. The approaches and progress toward the latter are reported.

Evaluation of the optical characteristics of c-axis oriented zinc oxide thin films grown by sol gel spin coating technique

NASA Astrophysics Data System (ADS)

Baisakh, K.; Behera, S.; Pati, S.

2018-03-01

In this work we have systematically studied the optical characteristics of synthesized wurzite zinc oxide thin films exhibiting (002) orientation. Using sol gel spin coating technique zinc oxide thin films are grown on pre cleaned fused quartz substrates. Structural properties of the films are studied using X-ray diffraction analysis. Micro structural analysis and thickness of the grown samples are analyzed using field emission scanning electron microscopy. With an aim to investigate the optical characteristics of the grown zinc oxide thin films the transmission and reflection spectra are evaluated in the ultraviolet-visible (UV-VIS) range. Using envelope method, the refractive index, extinction coefficient, absorption coefficient, band gap energy and the thickness of the synthesized films are estimated from the recorded UV-VIS spectra. An attempt has also been made to study the influence of crystallographic orientation on the optical characteristics of the grown films.

Easy and General Synthesis of Large-Sized Mesoporous Rare-Earth Oxide Thin Films by 'Micelle Assembly'.

PubMed

Li, Yunqi; Bastakoti, Bishnu Prasad; Imura, Masataka; Dai, Pengcheng; Yamauchi, Yusuke

2015-12-01

Large-sized (ca. 40 nm) mesoporous Er2O3 thin films are synthesized by using a triblock copolymer poly(styrene-b-2-vinyl pyridine-b-ethylene oxide) (PS-b-P2VP-b-PEO) as a pore directing agent. Each block makes different contributions and the molar ratio of PVP/Er(3+) is crucial to guide the resultant mesoporous structure. An easy and general method is proposed and used to prepare a series of mesoporous rare-earth oxide (Sm2O3, Dy2O3, Tb2O3, Ho2O3, Yb2O3, and Lu2O3) thin films with potential uses in electronics and optical devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Annealing Effects on the Formation of Copper Oxide Thin Films

NASA Astrophysics Data System (ADS)

Marzuki, Marina; Zamzuri Mohamad Zain, Mohd; Zarul Hisham, Nurazhra; Zainon, Nooraizedfiza; Harun, Azmi; Nani Ahmad, Rozie

2018-03-01

This study approached the simple method of developing CuO thin films by thermal oxidation on pure Cu sheets. The effects of annealing temperature on the formation of CuO layers have been investigated. The oxide layers have been fabricated by annealing of Cu sheets for 5 hours at different temperatures of 980 ~ 1010 °C. The morphologies and optical properties of annealed Cu sheets were studied by using SEM and UV-Vis spectrophotometer respectively. It is revealed that the annealing temperature influence the grain growth and the grain size increases as the temperature increase. The highest grain size was observed on sample annealed at 1000 °C with average area per grain size of 0.023 mm2. Theoretically, larger grain size provides less barriers for electron mobility and increase the efficiency of solar devices. The optical absorption spectra of the oxide films was also measured. Interference pattern was noted at wavelength about 900 nm corresponding to the formation of CuO film. The interference noise observed could be due to the coarse surface and the presence of powdery oxide deposits that causes the scattering loses from the surface. CuO film obtained by this method may be further studied and exploited as low cost photovoltaic device.

PREFACE: Proceedings Symposium G of E-MRS Spring Meeting on Fundamentals and Technology of Multifunctional Oxide Thin Films

NASA Astrophysics Data System (ADS)

2010-07-01

Oxide materials exhibit a large variety of functional properties that are useful in a plethora of applications. Symposium G focused on oxide thin films that include dielectric or switching properties. Its program mirrored very well the strong worldwide search for high-K thin films for gate, memory, and on-chip capacitors, as well as the emerging field of functional thin films for MEMS. A complete session was devoted to the colossal effect of dielectric response in (Ca,Cu)TiO3, representing the major European research groups in this field. A comprehensive overview on this phenomenon was given by D Sinclair J Wolfman presented the latest results on CCTO thin films obtained by wafer scale pulsed laser deposition. A Loidl showed the analytical power of dielectric spectroscopy when covering the complete frequency range from 1-1012 Hz, i.e. from space charge to phonon contributions at the example of CCTO. Another session was devoted to applications in non-volatile memories, covering various effects including ferroelectric and resistive switching, the complex behavior of oxide tunnel junctions (H Kohlstedt), the possibility to manipulate the magnetic state of a 2d-electron gas by the polarization of an adjacent ferroelectric gate (I Stolitchnov). Latest advancements in ALD processing for high-K thin films in dynamic RAM were reported by S Ramanathan. The advancement of piezoelectric PZT thin film MEMS devices was well documented by outstanding talks on their developments in industry (M Klee, F Tyholdt), new possibilities in GHz filters (T Matshushima), advancements in sol-gel processing (B Tuttle, H Suzuki), and low temperature integration approaches by UV light curing (S Trolier-McKinstry). Recent advances in incipient ferroelectric thin films and nano composites for tunable capacitors in microwave applications were present by A Vorobiev and T Yamada. Integrated electro-optics is another field to be conquered by thin film structures. The impressive progress made in this

Development and Research on the Mechanism of Novel Mist Etching Method for Oxide Thin Films

NASA Astrophysics Data System (ADS)

Kawaharamura, Toshiyuki; Hirao, Takashi

2012-03-01

A novel etching process with etchant mist was developed and applied to oxide thin films such as zinc oxide (ZnO), zinc magnesium oxide (ZnMgO), and indium tin oxide (ITO). By using this process, it was shown that precise control of the etching characteristics is possible with a reasonable etching rate, for example, in the range of 10-100 nm/min, and a fine pattern of high accuracy can also be realized, even though this is usually very difficult by conventional wet etching processes, for ZnO and ZnMgO. The mist etching process was found to be similarly and successfully applied to ITO. The mechanism of mist etching has been studied by examining the etching temperature dependence of pattern accuracy, and it was shown that the mechanism was different from that of conventional liquid-phase spray etching. It was ascertained that fine pattern etching was attained using mist droplets completely (or partly) gasified by the heat applied to the substrate. This technique was applied to the fabrication of a ZnO thin-film transistor (TFT) with a ZnO active channel length of 4 µm. The electrical properties of the TFT were found to be excellent with fine uniformity over the entire 4-in. wafer.

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities

NASA Astrophysics Data System (ADS)

Stegemann, Bert; Gad, Karim M.; Balamou, Patrice; Sixtensson, Daniel; Vössing, Daniel; Kasemann, Martin; Angermann, Heike

2017-02-01

Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO2/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO2/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO2/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO2/Si interfaces have been shown to generate less interface defect states.

Electron-ion temperature equilibration in warm dense tantalum

DOE PAGES

Doppner, T; LePape, S.; Ma, T.; ...

2014-11-05

We present measurements of electron-ion temperature equilibration in proton-heated tantalum, under warm dense matter conditions. Our results agree with theoretical predictions for metals calculated using input data from ab initio simulations. Furthermore, the fast relaxation observed in the experiment contrasts with much longer equilibration times found in proton heated carbon, indicating that the energy flow pathways in warm dense matter are far from being fully understood.

Transparent thin films of indium tin oxide: Morphology-optical investigations, inter dependence analyzes

NASA Astrophysics Data System (ADS)

Prepelita, P.; Filipescu, M.; Stavarache, I.; Garoi, F.; Craciun, D.

2017-12-01

Using a fast and eco-friendly deposition method, ITO thin films with different thicknesses (0.5 μm-0.7 μm) were deposited on glass substrates by radio frequency magnetron sputtering technique. A comparative analysis of these oxide films was then carried out. AFM investigations showed that the deposited films were smooth, uniform and having a surface roughness smaller than 10 nm. X-ray diffraction investigations showed that all samples were polycrystalline and the grain sizes of the films, corresponding to (222) cubic reflection, were found to increase with the increasing film thickness. The optical properties, evaluated by UV-VIS-NIR (190-3000 nm) spectrophotometer, evidenced that the obtained thin films were highly transparent, with a transmission coefficient between 90 and 96%, depending on the film thickness. Various methods (Swanepoel and Drude) were employed to appreciate the optimal behaviour of transparent oxide films, in determining the dielectric optical parameters and refractive index dispersion for ITO films exhibiting interference patterns in the optical transmission spectra. The electrical conductivity also increased as the film thickness increased.

Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films

NASA Astrophysics Data System (ADS)

Zhang, H.; Gauquelin, N.; McMahon, C.; Hawthorn, D. G.; Botton, G. A.; Wei, J. Y. T.

2018-03-01

It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of YBa2Cu3O7 -δ grown by pulsed laser deposition are annealed at up to 700 atm O2 and 900 ∘C , in conjunction with Cu enrichment by solid-state diffusion. The films show the clear formation of Y2Ba4Cu7O15 -δ and Y2Ba4Cu8O16 as well as regions of YBa2Cu5O9 -δ and YBa2Cu6O10 -δ phases, according to scanning transmission electron microscopy, x-ray diffraction, and x-ray absorption spectroscopy. Similarly annealed YBa2Cu3O7 -δ powders show no phase conversion. Our results demonstrate a route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.

A tri-layer thin film containing graphene oxide to protect zinc substrates from wear

NASA Astrophysics Data System (ADS)

Wang, Ying; Gu, Zhengpeng; Yuan, Ningyi; Chu, Fuqiang; Cheng, Guanggui; Ding, Jianning

2018-06-01

Due to its excellent properties, Zn alloy is widely used in daily life. However, the poor wear-resisting properties of Zn alloys limits their application. In this paper, a tri-layer thin film consisting of 3-aminopropyltriethoxysilane (APS), graphene oxide (GO) and perfluoropolyethers (PFPE) were successfully prepared on the surface of Zn alloy to improve the wear-resisting properties. The as-prepared tri-layer thin films were characterized by atomic force microscopy, Raman spectroscopy, x-ray photoelectron spectroscopy and contact angle measurement. In addition, the tribological properties of the as-prepared tri-layer thin films were studied on a ball-on-plate tribometer and the morphologies of worn surfaces were observed using 3D noncontact interferometric microscope. Compared with the control samples, the tri-layer thin films showed excellent friction-reducing and wear-resisting properties, which was attributed to the synergistic effect of the GO as the load-carrying layer and the PFPE as the lubricating layer.

The uniformity study of non-oxide thin film at device level using electron energy loss spectroscopy

NASA Astrophysics Data System (ADS)

Li, Zhi-Peng; Zheng, Yuankai; Li, Shaoping; Wang, Haifeng

2018-05-01

Electron energy loss spectroscopy (EELS) has been widely used as a chemical analysis technique to characterize materials chemical properties, such as element valence states, atoms/ions bonding environment. This study provides a new method to characterize physical properties (i.e., film uniformity, grain orientations) of non-oxide thin films in the magnetic device by using EELS microanalysis on scanning transmission electron microscope. This method is based on analyzing white line ratio of spectra and related extended energy loss fine structures so as to correlate it with thin film uniformity. This new approach can provide an effective and sensitive method to monitor/characterize thin film quality (i.e., uniformity) at atomic level for thin film development, which is especially useful for examining ultra-thin films (i.e., several nanometers) or embedded films in devices for industry applications. More importantly, this technique enables development of quantitative characterization of thin film uniformity and it would be a remarkably useful technique for examining various types of devices for industrial applications.

Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas

Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1 μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. Utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas

Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

DOE PAGES

Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; ...

2016-09-02

Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

DOE PAGES

Argibay, Nicolas; Mogonye, J. E.; Michael, Joseph R.; ...

2015-04-08

We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situelectrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilizedmore » grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of E a = 21.6 kJ/mol and A o = 2.3 × 10 -17 m 2/s for Au-1 vol. % ZnO and E a =12.7 kJ/mol and A o = 3.1 × 10 -18 m 2/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. As a result, the proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.« less

Response and representation of ductile damage under varying shock loading conditions in tantalum

DOE PAGES

Bronkhorst, C. A.; Gray, III, G. T.; Addessio, F. L.; ...

2016-02-25

The response of polycrystalline metals, which possess adequate mechanisms for plastic deformation under extreme loading conditions, is often accompanied by the formation of pores within the structure of the material. This large deformation process is broadly identified as progressive with nucleation, growth, coalescence, and failure the physical path taken over very short periods of time. These are well known to be complex processes strongly influenced by microstructure, loading path, and the loading profile, which remains a significant challenge to represent and predict numerically. In the current study, the influence of loading path on the damage evolution in high-purity tantalum ismore » presented. Tantalum samples were shock loaded to three different peak shock stresses using both symmetric impact, and two different composite flyer plate configurations such that upon unloading the three samples displayed nearly identical “pull-back” signals as measured via rear-surface velocimetry. While the “pull-back” signals observed were found to be similar in magnitude, the sample loaded to the highest peak stress nucleated a connected field of ductile fracture which resulted in complete separation, while the two lower peak stresses resulted in incipient damage. The damage evolution in the “soft” recovered tantalum samples was quantified using optical metallography, electron-back-scatter diffraction, and tomography. These experiments are examined numerically through the use of a model for shock-induced porosity evolution during damage. The model is shown to describe the response of the tantalum reasonably well under strongly loaded conditions but less well in the nucleation dominated regime. As a result, numerical results are also presented as a function of computational mesh density and discussed in the context of improved representation of the influence of material structure upon macro-scale models of ductile damage.« less

Electro deposition of cuprous oxide for thin film solar cell applications

NASA Astrophysics Data System (ADS)

Shahrestani, Seyed Mohammad

p and n type copper oxide semiconductor layers were fabricated by electrochemistry using new approaches for photovoltaic applications. Thin films were electroplated by cathodic polarization on a copper foil or indium tin oxide (ITO) substrates. The optimum deposition conditions (composition, pH and temperature of the electrolyte and applied potential) of the layers as thin films have been identified; in particular the conditions that allow getting the n-type layers have been well identified for the first time. The configuration of a photo - electrochemical cell was used to characterize the spectral response of the layers. It was shown that the p type layers exhibit a photocurrent in the cathode potential region and n layers exhibit photo current in the anode potential region. Measurements of electrical resistivity of electro chemically deposited layers of p and n type Cu2O, showed that the resistivity of p-type Cu2O varies from 3.2 x 105 to 2.0 x 108 Ocm. These values depend the electrodepositing conditions such as the pH of the solution, the deposition potential and temperature. The influence of several plating parameters of the p type layers of Cu2O, such as applied potential, pH and temperature of the bath on the chemical composition, degree of crystallinity, grain size and orientation parameters of the sample was systematically studied using X-ray diffraction and scanning electron microscopy. Depending of the electro-deposition potential, two different surface morphologies with various preferential crystal orientations were obtained for the temperatures of the electro-deposition of 30 °C and pH 9. For the same temperature, the layers of p type Cu2O of highly crystalline p type are obtained at pH 12, indicating that the crystallinity depends on the pH of the bath. Also, it has been shown that the morphology of Cu2O layers was changed by varying the potential and the duration of deposition, as well as the temperature of the solution. The conditions for the

Growth of textured thin Au coatings on iron oxide nanoparticles with near infrared absorbance

PubMed Central

Ma, L L; Borwankar, A U; Willsey, B W; Yoon, K Y; Tam, J O; Sokolov, K V; Feldman, M D; Milner, T E; Johnston, K P

2013-01-01

A homologous series of Au-coated iron oxide nanoparticles, with hydrodynamic diameters smaller than 60 nm was synthesized with very low Auto-iron mass ratios as low as 0.15. The hydrodynamic diameter was determined by dynamic light scattering and the composition by atomic absorption spectroscopy and energy dispersive x-ray spectroscopy (EDS). Unusually low Au precursor supersaturation levels were utilized to nucleate and grow Au coatings on iron oxide relative to formation of pure Au nanoparticles. This approach produced unusually thin coatings, by lowering autocatalytic growth of Au on Au, as shown by transmission electron microscopy (TEM). Nearly all of the nanoparticles were attracted by a magnet indicating a minimal amount of pure Au particles The coatings were sufficiently thin to shift the surface plasmon resonance (SPR) to the near infrared (NIR), with large extinction coefficients., despite the small particle hydrodynamic diameters, observed from dynamic light scattering to be less than 60 nm. PMID:23238021

Bilayered Oxide thin films for transparent electrode application

NASA Astrophysics Data System (ADS)

Dutta, Titas; Narayan, Jagdish

2008-10-01

Ga doped ZnO films with electrical and optical properties comparable to indium tin oxide (ITO) is a promising candidate for transparent conducting oxides (TCOs) because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function, which is a critical parameter for device applications. We report here the growth of a novel bilayered structure consisting of very thin (few monolayers) ITO, MoOx layer on Zn0.95Ga0.05O film for transparent electrode applications by using pulsed laser deposition technique at different temperatures and oxygen partial pressure. The characteristics of the ITO film and the heterostructure have been investigated in detail using XRD, TEM, XPS, and electrical and optical property measurements. It is envisaged that the overall transmittance and the resistivity are dictated by the thicker layer of ZnGa0.05O beneath the ITO layer. Hence, this study is aimed to improve the surface characteristics without affecting the overall transmittance and sheet resistance. This will enhance the transport of the carriers across the heterojunction in the device, thus, resulting in the increase in device efficiency.

Binary metal oxide nanoparticle incorporated composite multilayer thin films for sono-photocatalytic degradation of organic pollutants

NASA Astrophysics Data System (ADS)

Gokul, Paramasivam; Vinoth, Ramalingam; Neppolian, Bernaurdshaw; Anandhakumar, Sundaramurthy

2017-10-01

We report reduced graphene oxide (rGO) supported binary metal oxide (CuO-TiO2/rGO) nanoparticle (NP) incorporated multilayer thin films based on Layer-by-Layer (LbL) assembly for enhanced sono-photocatalytic degradation of methyl orange under exposure to UV radiation. Multilayer thin films were fabricated on glass and quartz slides, and investigated using scanning electron microscopy and UV-vis spectroscopy. The loading of catalyst NPs on the film resulted in the change of morphology of the film from smooth to rough with uniformly distributed NPs on the surface. The growth of the control and NP incorporated films followed a linear regime as a function of number of layers. The%degradation of methyl orange as a function of time was investigated by UV-vis spectroscopy and total organic carbon (TOC) measurements. Complete degradation of methyl orange was achieved within 13 h. The amount of NP loading in the film significantly influenced the%degradation of methyl orange. Catalyst reusability studies revealed that the catalyst thin films could be repeatedly used for up to five times without any change in photocatalytic activity of the films. The findings of the present study support that the binary metal oxide catalyst films reported here are very useful for continuous systems, and thus, making it an option for scale up.

A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors

NASA Astrophysics Data System (ADS)

Lu, Nianduan; Li, Ling; Sun, Pengxiao; Banerjee, Writam; Liu, Ming

2014-09-01

A unified physical model for Seebeck coefficient was presented based on the multiple-trapping and release theory for amorphous oxide semiconductor thin-film transistors. According to the proposed model, the Seebeck coefficient is attributed to the Fermi-Dirac statistics combined with the energy dependent trap density of states and the gate-voltage dependence of the quasi-Fermi level. The simulation results show that the gate voltage, energy disorder, and temperature dependent Seebeck coefficient can be well described. The calculation also shows a good agreement with the experimental data in amorphous In-Ga-Zn-O thin-film transistor.

Design, Development, manufacture and qualification of wet-slug all-tantalum capacitors

NASA Technical Reports Server (NTRS)

Maher, R. H.

1977-01-01

Specifications and qualification tests data are presented for over eleven hundred T3 case all-tantalum capacitors encompassing four ratings. The finalized product has all the advantages of the silver cased wet and is capable of withstanding some reverse potential ac ripple current.

Physics of Shock Compression and Release: NEMD Simulations of Tantalum and Silicon

NASA Astrophysics Data System (ADS)

Hahn, Eric; Meyers, Marc; Zhao, Shiteng; Remington, Bruce; Bringa, Eduardo; Germann, Tim; Ravelo, Ramon; Hammerberg, James

2015-06-01

Shock compression and release allow us to evaluate physical deformation and damage mechanisms occurring in extreme environments. SPaSM and LAMMPS molecular dynamics codes were employed to simulate single and polycrystalline tantalum and silicon at strain rates above 108 s-1. Visualization and analysis was accomplished using OVITO, Crystal Analysis Tool, and a redesigned orientation imaging function implemented into SPaSM. A comparison between interatomic potentials for both Si and Ta (as pertaining to shock conditions) is conducted and the influence on phase transformation and plastic relaxation is discussed. Partial dislocations, shear induced disordering, and metastable phase changes are observed in compressed silicon. For tantalum, the role of grain boundary and twin intersections are evaluated for their role in ductile spallation. Finally, the temperature dependent response of both Ta and Si is investigated.

Resistive switching characteristics of thermally oxidized TiN thin films

NASA Astrophysics Data System (ADS)

Biju, K. P.

2018-04-01

Resistive switching characteristics of thermally oxidized TiN thin films and mechanisms were investigated.XPS results indicates Ti-O content decreases with sputter etching and Ti 2p peak shift towards lower binding energy due to formation of Ti-O-N and Ti-N. Pt/TiO2/TiON/TiN stack exhibits both clockwise switching (CWS) and counter clockwise switching(CCWS) characteristic depending on polarity of the applied voltage. However the transition from CCWS to CWS is irreversible. Two stable switching modes with opposite switching polarity and different electrical characteristics are found to coexist in the same memory cell. Clockwise switching shows filamentary characteristics that lead to faster switching with excellent retention at high temperature. Counter-clockwise switching exhibits homogeneous conduction with slower switching and moderate retention. The field-induced switching in both CCWS and CWS might be due to inhomogeneous defect distribution due to thermal oxidation.

A Cuprous Oxide Thin Film Non-Enzymatic Glucose Sensor Using Differential Pulse Voltammetry and Other Voltammetry Methods and a Comparison to Different Thin Film Electrodes on the Detection of Glucose in an Alkaline Solution

PubMed Central

Molazemhosseini, Alireza; Liu, Chung Chiun

2018-01-01

A cuprous oxide (Cu2O) thin layer served as the base for a non-enzymatic glucose sensor in an alkaline medium, 0.1 NaOH solution, with a linear range of 50–200 mg/dL using differential pulse voltammetry (DPV) measurement. An X-ray photoelectron spectroscopy (XPS) study confirmed the formation of the cuprous oxide layer on the thin gold film sensor prototype. Quantitative detection of glucose in both phosphate-buffered saline (PBS) and undiluted human serum was carried out. Neither ascorbic acid nor uric acid, even at a relatively high concentration level (100 mg/dL in serum), interfered with the glucose detection, demonstrating the excellent selectivity of this non-enzymatic cuprous oxide thin layer-based glucose sensor. Chronoamperometry and single potential amperometric voltammetry were used to verify the measurements obtained by DPV, and the positive results validated that the detection of glucose in a 0.1 M NaOH alkaline medium by DPV measurement was effective. Nickel, platinum, and copper are commonly used metals for non-enzymatic glucose detection. The performance of these metal-based sensors for glucose detection using DPV were also evaluated. The cuprous oxide (Cu2O) thin layer-based sensor showed the best sensitivity for glucose detection among the sensors evaluated. PMID:29316652

Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

NASA Astrophysics Data System (ADS)

Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

2017-11-01

A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films

NASA Astrophysics Data System (ADS)

Wright, Jason T.; Carbaugh, Daniel J.; Haggerty, Morgan E.; Richard, Andrea L.; Ingram, David C.; Kaya, Savas; Jadwisienczak, Wojciech M.; Rahman, Faiz

2016-10-01

We describe in detail the growth procedures and properties of thermal silicon dioxide grown in a limited and dilute oxygen atmosphere. Thin thermal oxide films have become increasingly important in recent years due to the continuing down-scaling of ultra large scale integration metal oxide silicon field effect transistors. Such films are also of importance for organic transistors where back-gating is needed. The technique described here is novel and allows self-limited formation of high quality thin oxide films on silicon surfaces. This technique is easy to implement in both research laboratory and industrial settings. Growth conditions and their effects on film growth have been described. Properties of the resulting oxide films, relevant for microelectronic device applications, have also been investigated and reported here. Overall, our findings are that thin, high quality, dense silicon dioxide films of thicknesses up to 100 nm can be easily grown in a depleted oxygen environment at temperatures similar to that used for usual silicon dioxide thermal growth in flowing dry oxygen.

Intraoperative Localization of Tantalum Markers for Proton Beam Radiation of Choroidal Melanoma by an Opto-Electronic Navigation System: A Novel Technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amstutz, Christoph A., E-mail: christoph.amstutz@usz.ch; Bechrakis, Nikolaos E.; Foerster, Michael H.

2012-03-15

Purpose: External beam proton radiation therapy has been used since 1975 to treat choroidal melanoma. For tumor location determination during proton radiation treatment, surgical tantalum clips are registered with image data. This report introduces the intraoperative application of an opto-electronic navigation system to determine with high precision the position of the tantalum markers and their spatial relationship to the tumor and anatomical landmarks. The application of the technique in the first 4 patients is described. Methods and Materials: A navigated reference base was attached noninvasively to the eye, and a navigated pointer device was used to record the spatial positionmore » of the tantalum markers, the tumor, and anatomical landmarks. Measurement accuracy was assessed on ex vivo porcine eye specimen by repetitive recording of the tantalum marker positions. The method was applied intraoperatively on 4 patients undergoing routine tantalum clip surgery. The spatial position information delivered by the navigation system was compared to the geometric data generated by the EYEPLAN software. Results: In the ex vivo experiments, the maximum repetition error was 0.34 mm. For the intraoperative application, the root mean square error of paired-points matching of the marker positions from the navigation system and from the EYEPLAN software was 0.701-1.25 mm. Conclusions: Navigation systems are a feasible tool for accurate localization of tantalum markers and anatomic landmarks. They can provide additional geometric information, and therefore have the potential to increase the reliability and accuracy of external beam proton radiation therapy for choroidal melanoma.« less

Fabrication of Thin Electrolytes for Second-Generation Solid Oxide Fuel Cells

DTIC Science & Technology

1999-05-05

stabilized zirconia but are equally applicable to components, have been developed. Halogen com- other oxide electrolytes. pounds such as ZrCl4 and YC13...substrates. They used ZrCl4 and an oxygen source reactant. EVD is a two-step YC13 vapor mixtures as the metal compound sources process. The first step...thin zirconia layers on ited film. In this step oxygen ions formed on the porous alumina substrates. ZrCl4 and YC13 vapor water vapor side of the

Indium oxide thin film as potential photoanodes for corrosion protection of stainless steel under visible light

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yan; Yu, Jianqiang, E-mail: jianqyu@qdu.edu.cn; Sun, Kai

Graphical abstract: If the conduction band potential of In{sub 2}O{sub 3} is more negative than the corrosion potential of stainless steel, photo-induced electrons will be transferred from In{sub 2}O{sub 3} to the steel, thus shifting the potential of the steel into a corrosion immunity region and preventing the steel from the corrosion. - Highlights: • Indium oxide performed novel application under visible light. • Indium oxide by sol–gel method behaved better photoelectrochemical properties. • Electrons were transferred to stainless steel from indium oxide once light on. - Abstract: This paper reports the photoelectrochemical cathodic protection of 304 stainless steel bymore » In{sub 2}O{sub 3} thin-film under visible-light. The films were fabricated with In{sub 2}O{sub 3} powders, synthesized by both sol–gel (In{sub 2}O{sub 3}-sg) and solid-state (In{sub 2}O{sub 3}-ss) processes. The photo-induced open circuit potential and the photo-to-current efficiency measurements suggested that In{sub 2}O{sub 3} could be a promising candidate material for photoelectrochemical cathodic protection of metallic alloys under visible light. Moreover, the polarization curve experimental results indicated that In{sub 2}O{sub 3}-sg thin-film can mitigate the corrosion potential of 304 stainless steel to much more negative values with a higher photocurrent density than the In{sub 2}O{sub 3}-ss film under visible-light illumination. All the results demonstrated that the In{sub 2}O{sub 3}-sg thin-film provides a better photoelectrochemical cathodic protection for 304 stainless steel than In{sub 2}O{sub 3}-ss thin-film under visible-light illumination. The higher photoelectrochemical efficiency is possibly due to the uniform thin films produced with the smaller particle size of In{sub 2}O{sub 3}-sg, which facilitates the transfer of the photo-induced electrons from bulk to the surface and suppresses the charge recombination of the electrons and holes.« less