Focus on superconducting properties of iron chalcogenides

NASA Astrophysics Data System (ADS)

Takano, Yoshihiko

2012-10-01

Since the discovery of iron-based superconductors, much attention has been given to the exploration of new superconducting compounds. Numerous superconducting iron compounds have been found and categorized into five groups: LnFeAsO (Ln = lanthanide), BaFe2As2, KFeAs, FeSe and FeAs with perovskite blocking layers. Among them, FeSe has the simplest crystal structure. Since the crystal structure is composed of only superconducting Fe layers, the FeSe family must be the best material to investigate the mechanism of iron-based superconductivity. FeSe shows very strong pressure effects. The superconducting transition temperature (Tc) of FeSe is approximately 8 K at ambient pressure. However Tc dramatically increases up to 37 K under applied pressure of 4-6 GPa. This is the third highest Tc value among binary superconductors, surpassed only by CsC60 under pressure (Tc = 38 K) and MgB2 (Tc = 39 K). On the other hand, despite FeTe having a crystal structure analogous to that of FeSe, FeTe shows antiferromagnetic properties without superconductivity. Doping of small ions, either Se or S, however, can induce superconductivity in FeTe1-xSex or FeTe1-xSx . The superconductivity is very weak for small x values, and annealing under certain conditions is required to obtain strong superconductivity, for instance annealing in oxygen or alcoholic beverages such as red wine. The following selection of papers describe many important experimental and theoretical studies on iron chalcogenide superconductors including preparation of single crystals, bulk samples and thin films; NMR measurements; photoemission spectroscopy; high-pressure studies; annealing effects and research on new BiS2-based superconductors. I hope this focus issue will help researchers understand the frontiers of iron chalcogenide superconductors and assist in the discovery of new phenomena related to iron-based superconductivity.

Distortion of Local Atomic Structures in Amorphous Ge-Sb-Te Phase Change Materials

NASA Astrophysics Data System (ADS)

Hirata, A.; Ichitsubo, T.; Guan, P. F.; Fujita, T.; Chen, M. W.

2018-05-01

The local atomic structures of amorphous Ge-Sb-Te phase-change materials have yet to be clarified and the rapid crystal-amorphous phase change resulting in distinct optical contrast is not well understood. We report the direct observation of local atomic structures in amorphous Ge2Sb2Te5 using "local" reverse Monte Carlo modeling dedicated to an angstrom-beam electron diffraction analysis. The results corroborated the existence of local structures with rocksalt crystal-like topology that were greatly distorted compared to the crystal symmetry. This distortion resulted in the breaking of ideal octahedral atomic environments, thereby forming local disordered structures that basically satisfied the overall amorphous structure factor. The crystal-like distorted octahedral structures could be the main building blocks in the formation of the overall amorphous structure of Ge-Sb-Te.

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe3 -xGeTe2

NASA Astrophysics Data System (ADS)

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus; Petrovic, C.

2018-04-01

We report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe3 -xGeTe2 (x ≈0.36 ) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρx y/μ0Heff and longitudinal resistivity ρxx 2M /μ0Heff implies that the AHE in Fe3 -xGeTe2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear-M Hall conductivity σxy A below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.

Coexistent three-component and two-component Weyl phonons in TiS, ZrSe, and HfTe

NASA Astrophysics Data System (ADS)

Li, Jiangxu; Xie, Qing; Ullah, Sami; Li, Ronghan; Ma, Hui; Li, Dianzhong; Li, Yiyi; Chen, Xing-Qiu

2018-02-01

In analogy to various fermions of electrons in topological semimetals, topological mechanical states with two types of bosons, Dirac and Weyl bosons, were reported in some macroscopic systems of kHz frequency, and those with a type of doubly-Weyl phonons in atomic vibrational framework of THz frequency of solid crystals were recently predicted. Here, through first-principles calculations, we have reported that the phonon spectra of the WC-type TiS, ZrSe, and HfTe commonly host the unique triply degenerate nodal points (TDNPs) and single two-component Weyl points (WPs) in THz frequency. Quasiparticle excitations near TDNPs of phonons are three-component bosons, beyond the conventional and known classifications of Dirac, Weyl, and doubly-Weyl phonons. Moreover, we have found that both TiS and ZrSe have five pairs of type-I Weyl phonons and a pair of type-II Weyl phonons, whereas HfTe only has four pairs of type-I Weyl phonons. They carry nonzero topological charges. On the (10 1 ¯0 ) crystal surfaces, we observe topological protected surface arc states connecting two WPs with opposite charges, which host modes that propagate nearly in one direction on the surface.

Hydrostatic pressure-induced huge enhancement of critical current density and flux pinning in Fe1-x Co x Se0.5Te0.5 single crystals

NASA Astrophysics Data System (ADS)

Sang, Lina; Shabbir, Babar; Maheshwari, Pankaj; Qiu, Wenbin; Ma, Zongqing; Dou, Shixue; Cai, Chuanbing; Awana, V. P. S.; Wang, Xiaolin

2018-07-01

We performed a systematic study of the hydrostatic pressure (HP) effect on the supercon-ducting transition temperature (T c), critical current density (J c), irreversibility field (H irr), upper critical field (H c2), and flux pinning mechanism in un-doped and 3 at.% Co-doped FeSe0.5Te0.5 crystals. We found that T c is increased from 11.5 to 17 K as HP increases from 0 to 1.2 GPa. Remarkably, the J c is significantly enhanced by a factor of 3 to 100 for low and high temperature and field, and the H irr line is shifted to higher fields by HP up to 1.2 GPa. Based on the collective pinning model, the δl pinning associated with charge-carrier mean free path fluctuation is responsible for the pinning mechanism of Fe1-x Co x Se0.5Te0.5 samples with or without pressure. A comprehensive vortex phase diagram in the mixed state is constructed and analysed for the 3 at.% Co-doped sample.

Thermoelectric properties of the electron-doped perovskites Sr1-xCaxTi1-yNbyO3

NASA Astrophysics Data System (ADS)

Fukuyado, J.; Narikiyo, K.; Akaki, M.; Kuwahara, H.; Okuda, T.

2012-02-01

We have investigated thermoelectric (TE) properties for single crystals of perovskites Sr1-xCaxTi1-yNbyO3 for 0 ⩽ x ⩽ 0.4 and 0 ⩽ y ⩽ 0.03 below room temperature (RT). We found that SrTi0.99Nb0.01O3 shows a large power factor at low temperature (PF=50 μW/K2 cm at 100 K ˜ 90 μW/K2 cm at 50 K) and the largest dimensionless TE figure-of-merit below 40 K (ZT ˜ 0.07) among the ever-reported materials. Such a large low-temperature TE response around a carrier concentration of 1020 cm-3 is due to a distinct electron-phonon interaction, which could relate to the superconducting state. We also found that the Ca2+ substitution for Sr2+ increases ZT at 300 K for Sr1-xCaxTi0.97Nb0.03O3 from 0.08 to 0.105. The enhancement of ZT around RT originates both in a large reduction of a thermal conductivity due to an introduced randomness into the crystal structure and in an unexpected enhancement of a Seebeck coefficient.

Electronic spectrum of non-tetrahedral acceptors in CdTe:Cl and CdTe:Bi,Cl single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krivobok, V. S., E-mail: krivobok@lebedev.ru; Moscow Institute of Physics and Technology; Nikolaev, S. N.

2016-02-07

The electronic spectra of complex acceptors in compensated CdTe:Cl, CdTe:Ag,Cl, and CdTe:Bi,Cl single crystals are studied using low-temperature photoluminescence (PL) measurements under both nonresonant and resonant excitation of distant donor–acceptor pairs (DAP). The wavelength modulation of the excitation source combined with the analysis of the differential PL signal is used to enhance narrow spectral features obscured because of inhomogeneous line broadening and/or excitation transfer for selectively excited DAPs. For the well-known tetrahedral (T{sub D}) Ag{sub Cd} acceptor, the energies of four excited states are measured, and the values obtained are shown to be in perfect agreement with the previous data.more » Moreover, splitting between the 2P{sub 3/2} (Γ{sub 8}) and 2S{sub 3/2} (Γ{sub 8}) states is clearly observed for Ag{sub Cd} centers located at a short distance (5–7 nm) from a hydrogen-like donor (Cl{sub Te}). This splitting results from the reduction of the T{sub D} symmetry taking place when the acceptor is a member of a donor–acceptor pair. For the Cl-related complex acceptor with an activation energy of ∼121 meV (A-center), the energies of eight excited states are measured. It is shown that this defect produces low-symmetry central-cell correction responsible for the strong splitting of S-like T{sub D} shells. The energy spectrum of the Bi-related shallow acceptor with an activation energy of ∼36 meV is measured as well. The spectrum obtained differs drastically from the hydrogen-like set of levels, which indicates the existence of repulsive low-symmetry perturbation of the hydrogen-like Coulomb potential. It is also shown that the spectra of selectively excited PL recorded for a macroscopic ensemble of distant donor–acceptor pairs allow one to detect the low symmetry of acceptors of a given type caused by their complex nature or by the Jahn–Teller distortion. This method does not require any additional (external) field and is applicable to acceptors in diverse zinc-blende compound semiconductors.« less

Self-organization of a periodic structure between amorphous and crystalline phases in a GeTe thin film induced by femtosecond laser pulse amorphization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katsumata, Y.; Morita, T.; Morimoto, Y.

A self-organized fringe pattern in a single amorphous mark of a GeTe thin film was formed by multiple femtosecond pulse amorphization. Micro Raman measurement indicates that the fringe is a periodic alternation between crystalline and amorphous phases. The period of the fringe is smaller than the irradiation wavelength and the direction is parallel to the polarization direction. Snapshot observation revealed that the fringe pattern manifests itself via a complex but coherent process, which is attributed to crystallization properties unique to a nonthermally amorphized phase and the distinct optical contrast between crystalline and amorphous phases.

The crystallization behavior of amorphous Ge2Sb2Te5 films induced by a multi-pulsed nanosecond laser

NASA Astrophysics Data System (ADS)

Fan, T.; Liu, F. R.; Li, W. Q.; Guo, J. C.; Wang, Y. H.; Sun, N. X.; Liu, F.

2017-09-01

In this paper, accumulated crystallization of amorphous Ge2Sb2Te5 (a-GST) films induced by a multi-pulsed nanosecond (ns) excimer laser was investigated by x-ray diffraction (XRD), atomic force microscopy, field-emission scanning electron microscopy, x-ray photoelectron spectroscopy (XPS) and a spectrophotometer. XRD analyses revealed that detectable crystallization was firstly observed in the preferred orientation (200), followed by the orientations (220) and (111) after two pulses. Optical contrast, determined by crystallinity as well as surface roughness, was found to retain a linear relation within the first three pulses. A layered growth mechanism from the top surface to the interior of a-GST films was used to explain the crystallization behavior induced by the multi-pulse ns laser. XPS analyses for bond rearrangement and electronic structure further suggested that the crystallization process was performed by generating new bonds of Ge-Te and Sb-Te after laser irradiations. This paper presents the potential of multi-level devices and tunable thermal emitters based on controllable crystallization of phase-change materials.

Sb2Te3 and Its Superlattices: Optimization by Statistical Design.

PubMed

Behera, Jitendra K; Zhou, Xilin; Ranjan, Alok; Simpson, Robert E

2018-05-02

The objective of this work is to demonstrate the usefulness of fractional factorial design for optimizing the crystal quality of chalcogenide van der Waals (vdW) crystals. We statistically analyze the growth parameters of highly c axis oriented Sb 2 Te 3 crystals and Sb 2 Te 3 -GeTe phase change vdW heterostructured superlattices. The statistical significance of the growth parameters of temperature, pressure, power, buffer materials, and buffer layer thickness was found by fractional factorial design and response surface analysis. Temperature, pressure, power, and their second-order interactions are the major factors that significantly influence the quality of the crystals. Additionally, using tungsten rather than molybdenum as a buffer layer significantly enhances the crystal quality. Fractional factorial design minimizes the number of experiments that are necessary to find the optimal growth conditions, resulting in an order of magnitude improvement in the crystal quality. We highlight that statistical design of experiment methods, which is more commonly used in product design, should be considered more broadly by those designing and optimizing materials.

Benzothiazolium Single Crystals: A New Class of Nonlinear Optical Crystals with Efficient THz Wave Generation.

PubMed

Lee, Seung-Heon; Lu, Jian; Lee, Seung-Jun; Han, Jae-Hyun; Jeong, Chan-Uk; Lee, Seung-Chul; Li, Xian; Jazbinšek, Mojca; Yoon, Woojin; Yun, Hoseop; Kang, Bong Joo; Rotermund, Fabian; Nelson, Keith A; Kwon, O-Pil

2017-08-01

Highly efficient nonlinear optical organic crystals are very attractive for various photonic applications including terahertz (THz) wave generation. Up to now, only two classes of ionic crystals based on either pyridinium or quinolinium with extremely large macroscopic optical nonlinearity have been developed. This study reports on a new class of organic nonlinear optical crystals introducing electron-accepting benzothiazolium, which exhibit higher electron-withdrawing strength than pyridinium and quinolinium in benchmark crystals. The benzothiazolium crystals consisting of new acentric core HMB (2-(4-hydroxy-3-methoxystyryl)-3-methylbenzo[d]thiazol-3-ium) exhibit extremely large macroscopic optical nonlinearity with optimal molecular ordering for maximizing the diagonal second-order nonlinearity. HMB-based single crystals prepared by simple cleaving method satisfy all required crystal characteristics for intense THz wave generation such as large crystal size with parallel surfaces, moderate thickness and high optical quality with large optical transparency range (580-1620 nm). Optical rectification of 35 fs pulses at the technologically very important wavelength of 800 nm in 0.26 mm thick HMB crystal leads to one order of magnitude higher THz wave generation efficiency with remarkably broader bandwidth compared to standard inorganic 0.5 mm thick ZnTe crystal. Therefore, newly developed HMB crystals introducing benzothiazolium with extremely large macroscopic optical nonlinearity are very promising materials for intense broadband THz wave generation and other nonlinear optical applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

First demonstration of an all-solid-state optical cryocooler

DOE PAGES

Hehlen, Markus P.; Meng, Junwei; Albrecht, Alexander R.; ...

2018-06-06

Solid-state optical refrigeration uses anti-Stokes fluorescence to cool macroscopic objects to cryogenic temperatures without vibrations. Crystals such as Yb 3+-doped YLiF 4 (YLF:Yb) have previously been laser-cooled to 91 K. In this study, we show for the first time laser cooling of a payload connected to a cooling crystal. A YLF:Yb crystal was placed inside a Herriott cell and pumped with a 1020-nm laser (47 W) to cool a HgCdTe sensor that is part of a working Fourier Transform Infrared (FTIR) spectrometer to 135 K. This first demonstration of an all-solid-state optical cryocooler was enabled by careful control of themore » various desired and undesired heat flows. Fluorescence heating of the payload was minimized by using a single-kink YLF thermal link between the YLF:Yb cooling crystal and the copper coldfinger that held the HgCdTe sensor. The adhesive-free bond between YLF and YLF:Yb showed excellent thermal reliability. This laser-cooled assembly was then supported by silica aerogel cylinders inside a vacuum clamshell to minimize undesired conductive and radiative heat loads from the warm surroundings. Our structure can serve as a baseline for future optical cryocooler devices.« less

First demonstration of an all-solid-state optical cryocooler

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hehlen, Markus P.; Meng, Junwei; Albrecht, Alexander R.

Solid-state optical refrigeration uses anti-Stokes fluorescence to cool macroscopic objects to cryogenic temperatures without vibrations. Crystals such as Yb 3+-doped YLiF 4 (YLF:Yb) have previously been laser-cooled to 91 K. In this study, we show for the first time laser cooling of a payload connected to a cooling crystal. A YLF:Yb crystal was placed inside a Herriott cell and pumped with a 1020-nm laser (47 W) to cool a HgCdTe sensor that is part of a working Fourier Transform Infrared (FTIR) spectrometer to 135 K. This first demonstration of an all-solid-state optical cryocooler was enabled by careful control of themore » various desired and undesired heat flows. Fluorescence heating of the payload was minimized by using a single-kink YLF thermal link between the YLF:Yb cooling crystal and the copper coldfinger that held the HgCdTe sensor. The adhesive-free bond between YLF and YLF:Yb showed excellent thermal reliability. This laser-cooled assembly was then supported by silica aerogel cylinders inside a vacuum clamshell to minimize undesired conductive and radiative heat loads from the warm surroundings. Our structure can serve as a baseline for future optical cryocooler devices.« less

Crystal growth and analysis of ohmic contact and magneto-optical isolator properties of cadmium manganese telluride

NASA Astrophysics Data System (ADS)

Prakasam, Mythili; Viraphong, Oudomsack; Teulé-Gay, Lionel; Decourt, Rodolphe; Veber, Philippe; Víllora, Encarnación G.; Shimamura, Kiyoshi

2011-03-01

Cd1-xMnxTe (x=0.1, 0.3, 0.5, 0.7 and 0.9) (CMT) single crystals were grown by the vertical Bridgman method. The optical studies reveal that with the increase in Mn concentration, the band gap values increase, which is attributed to s, p-d exchange interaction between the band carriers and Mn ions. Faraday rotation angle of the grown CMT (x=0.5) crystals were measured at the following wavelengths: 825, 1060 and 1575 nm. It was inferred that CMT exhibit larger Faraday effect (3-6 times larger than terbium-gallium garnet (TGG) currently used for optical isolators) making it as an efficient material for optical isolator at longer wavelengths. Field-cooled and zero field-cooled magnetizations of CMT were measured as a function of temperature and magnetic field. The spin-glass like behavior of CMT and their tendency to decrease in magnitude with increasing Mn concentration have been analyzed. The metal contacts on the Cd1-xMnxTe (x=0.1, 0.5, 0.7 and 0.9) crystals have been made with various metals and metal alloys to establish the ohmic contact. The detector characteristics of CMT have been tested using γ-rays with 511 keV (22 Na) and 59.5 keV (241 Am).

Thermal conductivity studies of CdZnTe with varying Te excess

DOE PAGES

Jackson, Maxx; Bennett, Brittany; Giltnane, Dustin; ...

2016-08-28

Cadmium Zine Telluride (CZT) has been extensively studied as a room temperature semiconductor gamma radiation detector. CZT continues to show promise as a bulk and pixelated gamma spectrometer with less than one percent energy resolution; however the fabrication costs are high. Improved yields of high quality, large CZT spectroscopy grade crystals must be achieved. CZT is grown by the Traveling Heater Method (THM) with a Te overpressure to account for vaporization losses. This procedure creates Te rich zones. During growth, boules will often cleave limiting the number of harvestable crystals. As a result, crystal growth parameter optimization was evaluated bymore » modeling the heat flow within the system. Interestingly, Cadmium Telluride (CdTe) is used as a thermal conductivity surrogate in the absence of a thorough study of the CZT thermal properties. The current study has measured the thermal conductivity of CZT pressed powders with varying Te concentrations from 50-100% over 25-800°C to understand the variation in this parameter from CdTe. Cd0.9Zn0.1Te1.0 is the base CZT (designated 50%). CZT exhibits a thermal conductivity of nearly 1 W/mK, an order of magnitude greater than CdTe. Lastly, the thermal conductivity decreased with increasing Te concentration.« less

Thermal conductivity studies of CdZnTe with varying Te excess

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jackson, Maxx; Bennett, Brittany; Giltnane, Dustin

Cadmium Zine Telluride (CZT) has been extensively studied as a room temperature semiconductor gamma radiation detector. CZT continues to show promise as a bulk and pixelated gamma spectrometer with less than one percent energy resolution; however the fabrication costs are high. Improved yields of high quality, large CZT spectroscopy grade crystals must be achieved. CZT is grown by the Traveling Heater Method (THM) with a Te overpressure to account for vaporization losses. This procedure creates Te rich zones. During growth, boules will often cleave limiting the number of harvestable crystals. As a result, crystal growth parameter optimization was evaluated bymore » modeling the heat flow within the system. Interestingly, Cadmium Telluride (CdTe) is used as a thermal conductivity surrogate in the absence of a thorough study of the CZT thermal properties. The current study has measured the thermal conductivity of CZT pressed powders with varying Te concentrations from 50-100% over 25-800°C to understand the variation in this parameter from CdTe. Cd0.9Zn0.1Te1.0 is the base CZT (designated 50%). CZT exhibits a thermal conductivity of nearly 1 W/mK, an order of magnitude greater than CdTe. Lastly, the thermal conductivity decreased with increasing Te concentration.« less

A general route for the rapid synthesis of one-dimensional nanostructured single-crystal Te, Se and Se Te alloys directly from Te or/and Se powders

NASA Astrophysics Data System (ADS)

Zhou, Bo; Zhu, Jun-Jie

2006-03-01

A general and template-free 'disproportionation and reversal' route was developed to synthesize one-dimensional (1D) nanostructures of Te, Se and Se-Te alloys directly from Te or/and Se powders. The products were characterized by x-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and scanning electron microscopy (SEM). Te nanorods and nanowires with a width varying from about 40 nm to about 300 nm, Se nanowires with a width of 60-100 nm and a length of 4-6 µm, and SexTe100-x alloy nanorods with x in a wide range, and with a width of 30-70 nm and an aspect ratio of three to five, were prepared. The mechanism of formation of the nanorods and nanowires and the effects of the experimental conditions, such as solution concentration, cooling rate, solvent nature and heating process, on the morphology and size of the products have been discussed. We believe that this general route and some other proper reversible processes between solid state and solution state can be extended to the transformations from various bulk materials into nanosized materials with various morphologies.

Spherical crystals of Pb 1 - xSn xTe grown in microgravity

NASA Astrophysics Data System (ADS)

Kinoshita, Kyoichi; Yamada, Tomoaki

1996-07-01

Pb 1- xSn xTe spherical crystals were unintentionally obtained along with a cylindrical Pb 1 - xSn xTe crystal grown during the {SL-J}/{FMPT} mission on board the space shuttle "Endeavor". About 25 spherical crystals ranged from 0.5 to 11 mm in diameter. Melt leaked from the melt reservoir into the spring that plays the role of pushing the melt toward a seed crystal and eliminating free surface areas of the melt. Because of the surface tension of the melt, spherical melt drops formed in the hollow of the spring, then solidified into spherical crystals during the cooling process. Some of the crystals had lower dislocation densities, in the order of 10 4 cm -2, two orders smaller than those of terrestrially grown crystals from a melt. The experiment showed a way of stably positioning a large volume of liquid in microgravity without touching the crucible wall and a way of reducing crystalline defects by such growth.

Crystallization kinetics of the phase change material GeSb 6Te measured with dynamic transmission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Winseck, M. M.; Cheng, H. -Y.; Campbell, G. H.

2016-03-30

GeSb 6Te is a chalcogenide-based phase change material that has shown great ptoential for use in solid-state memory devices. The crystallization kinetics of amorphous thin films of GeSb 6Te during laser crystallization were followed with dynamic transmission electron microscopy, a photo-emission electron microscopy technique with nanosecond-scale time resolution. Nine-frame movies of crystal growth were taken during laser crystallization. The nucleation rate is observed to be very low and the growth rates are very high, up to 10.8 m s –1 for amorphous as-deposited films and significantly higher for an amorphous film subject to sub-threshold laser annealing before crystallization. The measuredmore » growth rates exceed any directly measured growth rate of a phase change material. Here, the crystallization is reminiscent of explosive crystallization of elemental semiconductors both in the magnitude of the growth rate and in the resulting crystalline microstructures.« less

Carrier Transport, Recombination, and the Effects of Grain Boundaries in Polycrystalline Cadmium Telluride Thin Films for Photovoltaics

NASA Astrophysics Data System (ADS)

Tuteja, Mohit

Cadmium Telluride (CdTe), a chalcogenide semiconductor, is currently used as the absorber layer in one of the highest efficiency thin film solar cell technologies. Current efficiency records are over 22%. In 2011, CdTe solar cells accounted for 8% of all solar cells installed. This is because, in part, CdTe has a low degradation rate, high optical absorption coefficient, and high tolerance to intrinsic defects. Solar cells based on polycrystalline CdTe exhibit a higher short-circuit current, fill factor, and power conversion efficiency than their single crystal counterparts. This is despite the fact that polycrystalline CdTe devices exhibit lower open-circuit voltages. This is contrary to the observation for silicon and III-V semiconductors, where material defects cause a dramatic drop in device performance. For example, grain boundaries in covalently-bonded semiconductors (a) act as carrier recombination centers, and (b) lead to localized energy states, causing carrier trapping. Despite significant research to date, the mechanism responsible for the superior current collection properties of polycrystalline CdTe solar cells has not been conclusively answered. This dissertation focuses on the macro-scale electronic band structure, and micro scale electronic properties of grains and grain boundaries in device-grade CdTe thin films to answer this open question. My research utilized a variety of experimental techniques. Samples were obtained from leading groups fabricating the material and devices. A CdCl 2 anneal is commonly performed as part of this fabrication and its effects were also investigated. Photoluminescence (PL) spectroscopy was employed to study the band structure and defect states in CdTe polycrystals. Cadmium vacancy- and chlorine-related states lead to carrier recombination, as in CdTe films grown by other methods. Comparing polycrystalline and single crystal CdTe, showed that the key to explaining the improved performance of polycrystalline CdTe does not lie in macroscopic analysis. The nanoscale majority carrier concentration was studied using scanning microwave impedance microscopy, which revealed an existence of majority carrier depletion along the grain boundaries, independent of the growth process used, which was absent in films that were not subjected to CdCl2 annealing. This effect promotes carrier separation and collection. Conductive atomic force microscopy showed enhanced conduction of electrons along the grain boundaries in samples subjected to the CdCl2 anneal treatment while holes were shown to move through the grain bulk. The separation of conduction channels minimizes recombination while simultaneously reducing series resistance and hence enhancing fill factor. Several technical capabilities demonstrated in this work can be easily extended to other semiconductor materials.

Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zappettini, A.; Zambelli, N.; Benassi, G.

2014-06-23

The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

Low Temperature Photoluminescence Characterization of Orbitally Grown CdZnTe

NASA Technical Reports Server (NTRS)

Ritter, Timothy M.; Larson, D. J.

1998-01-01

The II-VI ternary alloy CdZnTe is a technologically important material because of its use as a lattice matched substrate for HgCdTe based devices. The increasingly stringent requirements on performance that must be met by such large area infrared detectors also necessitates a higher quality substrate. Such substrate material is typically grown using the Bridgman technique. Due to the nature of bulk semiconductor growth, gravitationally dependent phenomena can adversely affect crystalline quality. The most direct way to alleviate this problem is by crystal growth in a reduced gravity environment. Since it requires hours, even days, to grow a high quality crystal, an orbiting space shuttle or space station provides a superb platform on which to conduct such research. For well over ten years NASA has been studying the effects of microgravity semiconductor crystal growth. This paper reports the results of photoluminescence characterization performed on an arbitrary grown CdZnTe bulk crystal.

Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Lehoczky, S. L.; Li, C.; Knuteson, D.; Raghothamachar, B.; Dudley, M.; Szoke, J.; Barczy, P.

2004-01-01

In the case of unsealed melt growth of an array of II-VI compounds, namely, CdTe, CdZnTe and ZnSe, there is a tremendous amount of experimental data describing the correlations between melt conditions and crystal quality. The results imply that the crystallinity quality can be improved if the melt was markedly superheated or long-time held before growth. It is speculated that after high superheating the associated complex dissociate and the spontaneous nucleation is retarded. In this study, crystals of CdTe were grown from melts which have undergone different thermal history by the unseeded gradient freeze method using the Universal Multizone Crystallizator (UMC). The effects of melt conditions on the quality of grown crystal were studied by various characterization techniques, including Synchrotron White Beam X-ray Topography (SWSXT), infrared microscopy, chemical analysis by glow discharge mass spectroscopy (GDMS), electrical conductivity and Hall measurements.

Improved performance of HgCdTe infrared detector focal plane arrays by modulating light field based on photonic crystal structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Jian; Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Ye, Zhenhua

2014-05-14

An HgCdTe long-wavelength infrared focal plane array photodetector is proposed by modulating light distributions based on the photonic crystal. It is shown that a promising prospect of improving performance is better light harvest and dark current limitation. To optimize the photon field distributions of the HgCdTe-based photonic crystal structure, a numerical method is built by combining the finite-element modeling and the finite-difference time-domain simulation. The optical and electrical characteristics of designed HgCdTe mid-wavelength and long-wavelength photon-trapping infrared detector focal plane arrays are obtained numerically. The results indicate that the photon crystal structure, which is entirely compatible with the large infraredmore » focal plane arrays, can significantly reduce the dark current without degrading the quantum efficiency compared to the regular mesa or planar structure.« less

Structural, electrical, and photoelectric properties of p-NiO/n-CdTe heterojunctions

NASA Astrophysics Data System (ADS)

Parkhomenko, Hryhorii; Solovan, Mykhaylo; Brus, Viktor; Maystruk, Eduard; Maryanchuk, Pavlo

2018-01-01

p-NiO/n-CdTe-photosensitive heterojunctions were prepared by the deposition of nickel oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The analysis of capacitance-voltage (C-V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance. The dominant current transport mechanisms in the heterojunctions were determined at forward and reverse biases. Using "light" I-V characteristics, we determined the open-circuit voltage Voc=0.42 V, the short-circuit current Isc=57.5 μA/cm2, and the fill factor FF=0.24 under white light illumination with the intensity of 80 mW.

Characterization of Etch Pit Formation via the Everson-Etching Method on CdZnTe Crystal Surfaces from the Bulk to the Nano-Scale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teague, L.; Duff, M.; Cadieux, J.

2010-09-24

A combination of atomic force microscopy, optical microscopy, and mass spectrometry was employed to study CdZnTe crystal surface and used etchant solution following exposure of the CdZnTe crystal to the Everson etch solution. We discuss the results of these studies in relationship to the initial surface preparation methods, the performance of the crystals as radiation spectrometers, the observed etch pit densities, and the chemical mechanism of surface etching. Our results show that the surface features that are exposed to etchants result from interactions with the chemical components of the etchants as well as pre-existing mechanical polishing.

Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

2015-07-01

Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ~21% and 3-4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications.

Compositional homogeneity and X-ray topographic analyses of CdTe xSe 1-x grown by the vertical Bridgman technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.

2015-02-01

We grew CdTe xSe 1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS’ X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTe xSe 1-x crystals. Here, we noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks.

Native point defects in GaSb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kujala, J.; Segercrantz, N.; Tuomisto, F.

2014-10-14

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude.more » We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.« less

Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications

NASA Astrophysics Data System (ADS)

Shintri, Shashidhar S.

Mercury cadmium telluride (MCT or Hg1-xCdxTe) grown by molecular beam epitaxy (MBE) is presently the material of choice for fabricating infrared (IR) detectors used in night vision based military applications. The focus of MCT epitaxy has gradually shifted since the last decade to using Si as the starting substrate since it offers several advantages. But the ˜19 % lattice mismatch between MCT and Si generates lots of crystal defects some of which degrade the performance of MCT devices. Hence thick CdTe films are used as buffer layers on Si to accommodate the defects. However, growth of high quality single crystal CdTe on Si is challenging and to date, the best MBE CdTe/Si reportedly has defects in the mid-105 cm -2 range. There is a critical need to reduce the defect levels by at least another order of magnitude, which is the main motivation behind the present work. The use of alternate growth technique called metal-organic vapor phase epitaxy (MOVPE) offers some advantages over MBE and in this work MOVPE has been employed to grow the various epitaxial films. In the first part of this work, conditions for obtaining high quality (211)B CdTe epitaxy on (211)Si were achieved, which also involved studying the effect of having additional intermediate buffer layers such as Ge and ZnTe and incorporation of in-situ thermal cyclic annealing (TCA) to reduce the dislocation density. A critical problem of Si cross-contamination due to 'memory effect' of different reactant species was minimized by introducing tertiarybutylArsine (TBAs) which resulted in As-passivation of (211)Si. The best 8-10 µm thick CdTe films on blanket (non-patterned) Si had dislocations around 3×105 cm-2, which are the best reported by MOVPE till date and comparable to the highest quality films available by MBE. In the second part of the work, nanopatterned (211)Si was used to study the effect of patterning on the crystal quality of epitaxial CdTe. In one such study, patterning of ˜20 nm holes in SiO2/Ge/(211)Si was achieved by block co-polymer (BCP) lithography. Conditions for selective CdTe epitaxy was achieved and results showed different defect propagation mechanism at the patterned interface compared to the films grown on blanket Si. In another study, patterning of ˜360 nm holes in SiO2/(211)Si was done by molecular transfer lithography (MxL). Conditions for selective Ge and CdTe epitaxy were achieved which was the most challenging part of this work. Thin CdTe films were characterized to check the effect of nanopatterning. Certain results invariably showed that CdTe grown on nanopatterned substrates demonstrated promise of defect reduction and blocking close to the growth interface. But presently, nanopatterning also offers some serious challenges such as uniformity of patterns and substrate cleaning prior to growth for successful implementation of epitaxy on very large areas. Such factors resulted in degradation of overall crystal quality and will be discussed in this work. This is the first successful demonstration of selective (211)B CdTe epitaxy on Si by MOVPE using some of the relatively novel and promising nanopatterning techniques.

Solidification Using the Baffle in Sealed Ampoules

NASA Technical Reports Server (NTRS)

Ostrogorsky, A.; Marin, C.; Churilov, A.; Volz, M. P.; Bonner, W. A.; Spivey, R. A.; Smith, G.

2003-01-01

Solidification Using a Baffle in Sealed Ampoules (SUBSA) is the first investigation conducted in the Microgravity Science Glovebox (MSG) Facility at the International Space Station (ISS) Alpha. In July, August and September of 2002, 8 single crystals of InSb, doped with Te and Zn, were directionally solidified in microgravity. Ground based tests, related numerical modeling and images of the growth process obtained in microgravity are presented.

Pressure evolution of electrical transport in the 3D topological insulator (Bi,Sb) 2 (Se,Te) 3

DOE PAGES

Jeffries, J. R.; Butch, N. P.; Vohra, Y. K.; ...

2015-03-18

The group V-VI compounds|like Bi 2Se 3, Sb 2Te 3, or Bi 2Te 3|have been widely studied in recent years for their bulk topological properties. The high-Z members of this series form with the same crystal structure, and are therefore amenable to isostructural substitution studies. It is possible to tune the Bi-Sb and Te-Se ratios such that the material exhibits insulating behavior, thus providing an excellent platform for understanding how a topological insulator evolves with applied pressure. We report our observations of the pressure-dependent electrical transport and crystal structure of a pseudobinary (Bi,Sb) 2(Te,Se) 3 compound. Similar to some ofmore » its sister compounds, the (Bi,Sb) 2(Te,Se) 3 pseudobinary compound undergoes multiple, pressure-induced phase transformations that result in metallization, the onset of a close-packed crystal structure, and the development of distinct superconducting phases.« less

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

NASA Astrophysics Data System (ADS)

Rao, Feng; Ding, Keyuan; Zhou, Yuxing; Zheng, Yonghui; Xia, Mengjiao; Lv, Shilong; Song, Zhitang; Feng, Songlin; Ronneberger, Ider; Mazzarello, Riccardo; Zhang, Wei; Ma, Evan

2017-12-01

Operation speed is a key challenge in phase-change random-access memory (PCRAM) technology, especially for achieving subnanosecond high-speed cache memory. Commercialized PCRAM products are limited by the tens of nanoseconds writing speed, originating from the stochastic crystal nucleation during the crystallization of amorphous germanium antimony telluride (Ge2Sb2Te5). Here, we demonstrate an alloying strategy to speed up the crystallization kinetics. The scandium antimony telluride (Sc0.2Sb2Te3) compound that we designed allows a writing speed of only 700 picoseconds without preprogramming in a large conventional PCRAM device. This ultrafast crystallization stems from the reduced stochasticity of nucleation through geometrically matched and robust scandium telluride (ScTe) chemical bonds that stabilize crystal precursors in the amorphous state. Controlling nucleation through alloy design paves the way for the development of cache-type PCRAM technology to boost the working efficiency of computing systems.

Temperature-driven massless Kane fermions in HgCdTe crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teppe, F.; Marcinkiewicz, M.; Krishtopenko, S. S.

2016-08-30

It has recently been shown that electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in condensed matter systems. These single valley relativistic states, massless Kane fermions, cannot be described by any other relativistic particles. Furthermore, the HgCdTe band structure can be continuously tailored by modifying cadmium content or temperature. At critical concentration or temperature, the bandgap collapses as the system undergoes a semimetal-to-semiconductor topological phase transition between the inverted and normal alignments. Here, using far-infrared magneto-spectroscopy we explore the continuous evolution of band structure of bulk HgCdTe as temperature is tuned across the topological phasemore » transition. We demonstrate that the rest mass of Kane fermions changes sign at critical temperature, whereas their velocity remains constant. The velocity universal value of (1.07±0.05) × 106 m s -1 remains valid in a broad range of temperatures and Cd concentrations, indicating a striking universality of the pseudo-relativistic description of the Kane fermions in HgCdTe.« less

Charge Density Wave and Narrow Energy Gap at Room Temperature in 2D Pb 3–xSb 1+xS 4Te 2-δ with Square Te Sheets

DOE PAGES

Chen, Haijie; Malliakas, Christos D.; Narayan, Awadhesh; ...

2017-07-17

We report a new two-dimensional compound Pb 3–xSb 1+xS 4Te 2-δ has a charge density wave (CDW) at room temperature. The CDW is incommensurate with q-vector of 0.248(6)a* + 0.246(8)b* + 0.387(9)c* for x = 0.29(2) and d = 0.37(3) due to positional and occupational long range ordering of Te atoms in the sheets. The modulated structure was refined from the single crystal X-ray diffraction data with a superspace group Pmore » $$\\bar{1}$$(αβγ)0 using (3 + 1)-dimensional crystallography. The resistivity increases with decreasing temperature, suggesting semiconducting behavior. The transition temperature (T CDW) of the CDW is ~ 345 K above which the Te square sheets become disordered with no q-vector. Lastly, first-principles density functional theory calculations on the undistorted structure and an approximate commensurate supercell reveal that the gap is due to the structure modulation.« less

Charge Density Wave and Narrow Energy Gap at Room Temperature in 2D Pb 3–xSb 1+xS 4Te 2-δ with Square Te Sheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Haijie; Malliakas, Christos D.; Narayan, Awadhesh

We report a new two-dimensional compound Pb 3–xSb 1+xS 4Te 2-δ has a charge density wave (CDW) at room temperature. The CDW is incommensurate with q-vector of 0.248(6)a* + 0.246(8)b* + 0.387(9)c* for x = 0.29(2) and d = 0.37(3) due to positional and occupational long range ordering of Te atoms in the sheets. The modulated structure was refined from the single crystal X-ray diffraction data with a superspace group Pmore » $$\\bar{1}$$(αβγ)0 using (3 + 1)-dimensional crystallography. The resistivity increases with decreasing temperature, suggesting semiconducting behavior. The transition temperature (T CDW) of the CDW is ~ 345 K above which the Te square sheets become disordered with no q-vector. Lastly, first-principles density functional theory calculations on the undistorted structure and an approximate commensurate supercell reveal that the gap is due to the structure modulation.« less

Copper chalcogenide clusters stabilized with ferrocene-based diphosphine ligands.

PubMed

Khadka, Chhatra B; Najafabadi, Bahareh Khalili; Hesari, Mahdi; Workentin, Mark S; Corrigan, John F

2013-06-17

The redox-active diphosphine ligand 1,1'-bis(diphenylphosphino)ferrocene (dppf) has been used to stabilize the copper(I) chalcogenide clusters [Cu12(μ4-S)6(μ-dppf)4] (1), [Cu8(μ4-Se)4(μ-dppf)3] (2), [Cu4(μ4-Te)(μ4-η(2)-Te2)(μ-dppf)2] (3), and [Cu12(μ5-Te)4(μ8-η(2)-Te2)2(μ-dppf)4] (4), prepared by the reaction of the copper(I) acetate coordination complex (dppf)CuOAc (5) with 0.5 equiv of E(SiMe3)2 (E = S, Se, Te). Single-crystal X-ray analyses of complexes 1-4 confirm the presence of {Cu(2x)E(x)} cores stabilized by dppf ligands on their surfaces, where the bidentate ligands adopt bridging coordination modes. The redox chemistry of cluster 1 was examined using cyclic voltammetry and compared to the electrochemistry of the free ligand dppf and the corresponding copper(I) acetate coordination complex 5. Cluster 1 shows the expected consecutive oxidations of the ferrocene moieties, Cu(I) centers, and phosphine of the dppf ligand.

Charge Density Wave and Narrow Energy Gap at Room Temperature in 2D Pb3-xSb1+xS4Te2-δ with Square Te Sheets.

PubMed

Chen, Haijie; Malliakas, Christos D; Narayan, Awadhesh; Fang, Lei; Chung, Duck Young; Wagner, Lucas K; Kwok, Wai-Kwong; Kanatzidis, Mercouri G

2017-08-16

We report a new two-dimensional compound, Pb 3-x Sb 1+x S 4 Te 2-δ , that has a charge density wave (CDW) at room temperature. The CDW is incommensurate with q-vector of 0.248(6)a* + 0.246(8)b* + 0.387(9)c* for x = 0.29(2) and δ = 0.37(3) due to positional and occupational long-range ordering of Te atoms in the sheets. The modulated structure was refined from the single-crystal X-ray diffraction data with a superspace group P1̅(αβγ)0 using (3 + 1)-dimensional crystallography. The resistivity increases with decreasing temperature, suggesting semiconducting behavior. The transition temperature (T CDW ) of the CDW is ∼345 K, above which the Te square sheets become disordered with no q-vector. First-principles density functional theory calculations on the undistorted structure and an approximate commensurate supercell reveal that the gap is due to the structure modulation.

Femtosecond optical characterization and applications in cadmium(manganese) telluride diluted magnetic semiconductors

NASA Astrophysics Data System (ADS)

Wang, Daozhi

This thesis is devoted to the optical characterization of Cd(Mn)Te single crystals. I present the studies of free-carrier dynamics and generation and detection of coherent acoustic phonons (CAPS) using time-resolved femtosecond pump-probe spectroscopy. The giant Faraday effect and ultrafast responsivity of Cd(Mn)Te to sub-picosecond electromagnetic transients are also demonstrated and discussed in detail. The first, few-picosecond-long electronic process after the initial optical excitation exhibits very distinct characteristic dependence on the excitation condition, and in case of Cd(Mn)Te, it has been attributed to the collective effects of band filling, band renormalization, and two-photon absorption. A closed-form, analytic expression for the differential reflectivity induced by the CAPs is derived based on the propagating-strain-pulse model and it accounts very well for our experimental observations. The accurate values of the Mn concentration and longitudinal sound velocity nu s in Cd(Mn)Te were obtained by fitting the data of the refractive index dependence on the probe wavelength to the Schubert model. In Cd 0.91Mn0.09Te, nus was found to be 3.6x103 m/s. Our comparison studies from the one-color and two-color experiments reveal that the intrinsic phonon lifetime in Cd(Mn)Te was at least on the order of nanoseconds, and the observed exponential damping of the CAP oscillations was due to the finite absorption depth of the probe light. Optically-induced electronic stress has been demonstrated to be the main generation mechanism of CAPs. We also present the giant Faraday effect in the Cd(Mn)Te and the spectra of the Verdet constant, which is mainly due to the exchange interaction between the Mn ions and band electrons. The spectral characteristics of the Verdet constant in Cd(Mn)Te exhibit very unique features compared to that in pure semiconductors. In our time-resolved sampling experiments at the room temperature, the response of the Cd(Mn)Te, particularly with low Mn concentrations, to the sub-picosecond electromagnetic pulses has been demonstrated for the first time and studied in detail. The physical origin of the ultrafast responsivity is shown to be the electro-optic (Pockels) effect, simultaneously excluding the magneto-optical (Faraday) effect due to the Mn-ion spin dynamics. The discrepancy between the absence of the low-frequency Pockels effect and the ultrafast sampling results, suggests that in Cd(Mn)Te crystals at low frequencies, the electric field component of the external electromagnetic transients is screened by the free carriers (holes). At very high (THz) frequencies, tested by our sampling experiment, Mn spins are too slow to respond and we observe the very large Pockels effect in Cd(Mn)Te crystals.

Growth of Compound Semiconductors in a Low Gravity Environment: Microgravity Growth of PbSnTe

NASA Technical Reports Server (NTRS)

Fripp, Archibald L.; Debnam, William J.; Rosch, William R.; Baker, N. R.; Narayanan, R.

1999-01-01

The growth of the alloy compound semiconductor lead tin telluride (PbSnTe) was chosen for a microgravity flight experiment in the Advanced Automated Directional Solidification Furnace (AADSF), on the United States Microgravity Payload-3 (USMP-3) and on USMP-4 Space Shuttle flights in February, 1996, and November, 1997. The objective of these experiments was to determine the effect of the reduction in convection, during the growth process, brought about by the microgravity environment. The properties of devices made from PbSnTe are dependent on the ratio of the elemental components in the starting crystal. Compositional uniformity in the crystal is only obtained if there is no significant mixing in the liquid during growth. Lead tin telluride is an alloy of PbTe and SnTe. The technological importance of PbSnTe lies in its band gap versus composition diagram which has a zero energy crossing at approximately 40% SnTe. This facilitates the construction of long wavelength (>6 micron) infrared detectors and lasers. Observations and experimental methods of crystal growth of PbSnTe on both Space Shuttle Flights are presented.

Effects of dry etching processes on exciton and polariton characteristics in ZnTe

NASA Astrophysics Data System (ADS)

Sun, J. H.; Xie, W. B.; Shen, W. Z.; Ogawa, H.; Guo, Q. X.

2003-12-01

We have employed temperature-dependent reflection spectra to study the effects of reactive ion etching (RIE) on the exciton and polariton characteristics in ZnTe crystals exposed to CH4/H2 gases under different rf plasma powers. Classic exciton-polariton theory has been used to calculate the reflection spectra. By comparing with an as-grown ZnTe crystal and the temperature-dependent behavior, we are able to identify the excitons and RIE-induced polariton structures in these dry etched ZnTe crystals. An increase of the rf plasma power will lead to an increase of defect density in the surface damage layers, resulting in a decrease of the photon energies of the observed exciton and polariton structures.

On the Role of Boron in CdTe and CdZnTe Crystals

NASA Astrophysics Data System (ADS)

Pavesi, M.; Marchini, L.; Zha, M.; Zappettini, A.; Zanichelli, M.; Manfredi, M.

2011-10-01

It is well known that group III elements act as donors if they play a substitutional role at the metallic site in II-tellurides; nevertheless, several studies report both on the creation of complexes with vacancies, named A-centers, and on the involvement in self-compensation mechanisms, especially for indium. The boron concentration in II-tellurides is negligible, and its contribution to transport mechanisms has not been studied yet. For the last few years the authors have been developing a new technique to grow CdZnTe by the vertical Bridgman technique, taking advantage of encapsulation by means of boron oxide. In this way, crystals characterized by large single grains, low etch pit density, and high resistivity have been obtained. Recently, x-ray detectors with state-of-the-art performance have been produced from such crystals. Boron contamination, as a consequence of this growth method, is quite low but at least one order of magnitude above values obtained with other growth techniques. Besides being a low-cost technique which is also suitable for large-scale mass production, the encapsulated vertical Bridgman technique is quite useful to prevent dislocations, grain boundaries, and stacking faults; for these reasons, careful characterization was performed to understand the effect of boron both on the electrical properties and on the spectroscopic performance of the final crystals. Our characterization is mainly based on low-temperature photoluminescence in addition to electrical current-voltage measurements, photostimulated current, and x-ray spectroscopy. The results indicate that boron behaves like other group III elements; in fact, boron forms a complex that does not affect the good performance of our x-ray detectors, even if it shows some properties which are typical of A-centers.

Layer-dependent quantum cooperation of electron and hole states in the anomalous semimetal WTe 2

DOE PAGES

Das, Pranab Kumar; Di Sante, D.; Vobornik, I.; ...

2016-02-29

The behaviour of electrons and holes in a crystal lattice is a fundamental quantum phenomenon, accounting for a rich variety of material properties. Boosted by the remarkable electronic and physical properties of two-dimensional materials such as graphene and topological insulators, transition metal dichalcogenides have recently received renewed attention. In this context, the anomalous bulk properties of semimetallic WTe 2 have attracted considerable interest. We report angle- and spin-resolved photoemission spectroscopy of WTe 2 single crystals, through which we disentangle the role of W and Te atoms in the formation of the band structure and identify the interplay of charge, spinmore » and orbital degrees of freedom. Supported by first-principles calculations and high-resolution surface topography, we also reveal the existence of a layer-dependent behaviour. The balance of electron and hole states is found only when considering at least three Te–W–Te layers, showing that the behaviour of WTe 2 is not strictly two dimensional.« less

Sn-doped Bi1.1Sb0.9Te2S: An ideal bulk topological insulator

NASA Astrophysics Data System (ADS)

Kushwaha, Sk; Pletikosic, I.; Liang, T.; Gyenis, A.; Lapidus, Sh; Tian, Y.; Zhao, H.; Burch, Ks; Lin, J.; Wang, W.; Ji, H.; Fedorov, Av; Yazdani, A.; Ong, Np; Valla, T.; Cava, Rj

In the recent decade the topological insulators have been of significant importance for the condensed matter community. However, so far no real materials could fulfill all the requirements. Here, we present the Bridgman growth of slightly Sn-doped Bi1.1Sb0.9Te2S (with bulk band gap of 350) single crystals and characterization by electronic transport, STM and ARPES. The results on the crystals exhibit an intrinsic semiconducting behavior with the Fermi level and Dirac energies lie in bulk gap and high quality 2D surface states are detangled from the bulk states, and it fulfils all the requirements to be an ideal topological insulator. ARO MURI W911NF-12-1-0461; ARO W911NF-12-1-0461; MRSEC NSF-DMR-1420541; LBNL & BNL DE-AC02-05CH11231 & DE-SC0012704; DOE Office of Science DE-AC02-06CH11357; NSF DMR-1410846.

Two-dimensional wide-band-gap nitride semiconductors: Single-layer 1 T -X N2 (X =S ,Se , and Te )

NASA Astrophysics Data System (ADS)

Lin, Jia-He; Zhang, Hong; Cheng, Xin-Lu; Miyamoto, Yoshiyuki

2016-11-01

Recently, the two-dimensional (2D) semiconductors arsenene and antimonene, with band gaps larger than 2.0 eV, have attracted tremendous interest, especially for potential applications in optoelectronic devices with a photoresponse in the blue and UV range. Motivated by this exciting discovery, types of highly stable wide-band-gap 2D nitride semiconductors were theoretically designed. We propose single-layer 1 T -X N2 (X =S , Se, and Te) via first-principles simulations. We compute 1 T -X N2 (X =S , Se, and Te) with indirect band gaps of 2.825, 2.351, and 2.336 eV, respectively. By applying biaxial strain, they are able to induce the transition from a wide-band-gap semiconductor to a metal, and the range of absorption spectra of 1 T -X N2 (X =S , Se, and Te) obviously extend from the ultraviolet region to the blue-purple light region. With an underlying graphene, we find that 1 T -X N2 can completely shield the light absorption of graphene in the range of 1-1.6 eV. Our research paves the way for optoelectronic devices working under blue or UV light, and mechanical sensors based on these 2D crystals.

Integrated micro thermoelectric cooler: Theory, fabrication and characterization

NASA Astrophysics Data System (ADS)

da Silva, Luciana Wasnievski

The flows of heat and electricity in a column-type micro thermoelectric (TE) cooler that uses telluride compounds for the n- and p-type elements, are analyzed by modeling the various interfacial resistances. Electron (barrier tunneling) and phonon (diffuse mismatch) boundary resistances at the TE/metal interface, and thermal non-equilibrium between electrons and phonons adjacent to this interface (cooling length), increase the thermal conduction resistance and decrease the Seebeck coefficient of the TE elements. These in turn reduce the device cooling performance, which is also affected by the thermal and electrical contact resistances at the TE/metal and the metal/electrical-insulator interfaces. From the device optimization, it is predicted (for an available voltage of 3 V) that a micro TE cooler with 50 TE pairs (Bi2Te3 and Sb2Te3 high performance TE films), column thickness of 4 mum (limited by the current fabrication process), and column cross-section area of 7 mum x 7 mum, should produce a temperature drop of 10 K with a cooling load of 10 mW. This device will operate with a current of 11 mA and will require a power of 34 mW. The coefficient of performance is 0.3. Co-evaporated Bi-Te and Sb-Te films were fabricated at various deposition conditions (evaporation rate of individual species and substrate temperature), and their TE properties (Seebeck coefficient, electrical resistivity, and carrier concentration) were measured, in search of optimal TE performance. The deposition rates were controlled such that the tellurium atomic composition changed from 48 to 74%, and the substrate temperature ranged from 130 to 300°C. The chemical composition and crystal structure of the films were recorded (using a microprobe and a X-ray diffractomer, respectively), analyzed, and compared with standard Bi2Te3 and Sb2Te 3 single crystal samples. High performance TE films had a tellurium atomic concentration around 60% and were deposited at a substrate temperature between 260 and 270°C. Due to degradation of the photoresist used for patterning the TE films, in the first-generation device, they were deposited with a maximum substrate temperature of 130°C. The TE columns were connected using Cr/Au/Ti/Pt layers at the hot junctions, and Cr/Au layers at the cold junctions. A device with 60 TE pairs and column width of 40 mum (finer device structures had limited yield) was tested using infrared thermometry. The average cooling achieved was about 1 K, which was close to the predicted value. A future-generation device is proposed, where high performance TE films can be patterned with optimized geometries (high density micro TE coolers), allowing these devices to fulfill the requirements for a wireless environmental monitor application.

Advanced methods for preparation and characterization of infrared detector materials. [crystallization and phase diagrams of Hg sub 1-x Cd sub x Te

NASA Technical Reports Server (NTRS)

Lehoczy, S. L.

1979-01-01

Crystal growth of Hg sub 1-x Cd sub x Te and density measurements of ingot slices are discussed. Radial compositional variations are evaluated from the results of infrared transmission edge mapping. The pseudo-binary HgTe-CdTe phase diagram is examined with reference to differential thermal analysis measurements. The phase equilibria calculations, based on the 'regular association solution' theory (R.A.S.) are explained and, using the obtained R.A.S. parameters, the activities of Hg, Cd, and Te vapors and their partial pressures over the pseudo-binary melt are calculated.

Effect of Sn addition on glassy Si-Te bulk sample

NASA Astrophysics Data System (ADS)

Babanna, Jagannatha K.; Roy, Diptoshi; Varma, Sreevidya G.; Asokan, Sundarrajan; Das, Chandasree

2018-05-01

Bulk Si20Te79Sn1 glass is prepared by melt-quenching method, amorphous nature of the as-quenched glass is confirmed by XRD. I-V characteristics reveals that Si20Te79Sn1 bulk sample exhibits threshold type electrical switching behavior. The thermal parameters such as crystallization temperature, glass transition temperature are obtained using differential scanning calorimetry. The crystalline peak study of the sample annealed at crystallization temperature for 2 hr shows that the Sn atom interact with Si or Te but do not interact with the Si-Te matrix in a greater extent and it forms a separate phase network individually.

A numerical study of zone-melting process for the thermoelectric material of Bi2Te3

NASA Astrophysics Data System (ADS)

Chen, W. C.; Wu, Y. C.; Hwang, W. S.; Hsieh, H. L.; Huang, J. Y.; Huang, T. K.

2015-06-01

In this study, a numerical model has been established by employing a commercial software; ProCAST, to simulate the variation/distribution of temperature and the subsequent microstructure of Bi2Te3 fabricated by zone-melting technique. Then an experiment is conducted to measure the temperature variation/distribution during the zone-melting process to validate the numerical system. Also, the effects of processing parameters on crystallization microstructure such as moving speed and temperature of heater are numerically evaluated. In the experiment, the Bi2Te3 powder are filled into a 30mm diameter quartz cylinder and the heater is set to 800°C with a moving speed 12.5 mm/hr. A thermocouple is inserted in the Bi2Te3 powder to measure the temperature variation/distribution of the zone-melting process. The temperature variation/distribution measured by experiment is compared to the results of numerical simulation. The results show that our model and the experiment are well matched. Then the model is used to evaluate the crystal formation for Bi2Te3 with a 30mm diameter process. It's found that when the moving speed is slower than 17.5 mm/hr, columnar crystal is obtained. In the end, we use this model to predict the crystal formation of zone-melting process for Bi2Te3 with a 45 mm diameter. The results show that it is difficult to grow columnar crystal when the diameter comes to 45mm.

High-Q/V Monolithic Diamond Microdisks Fabricated with Quasi-isotropic Etching.

PubMed

Khanaliloo, Behzad; Mitchell, Matthew; Hryciw, Aaron C; Barclay, Paul E

2015-08-12

Optical microcavities enhance light-matter interactions and are essential for many experiments in solid state quantum optics, optomechanics, and nonlinear optics. Single crystal diamond microcavities are particularly sought after for applications involving diamond quantum emitters, such as nitrogen vacancy centers, and for experiments that benefit from diamond's excellent optical and mechanical properties. Light-matter coupling rates in experiments involving microcavities typically scale with Q/V, where Q and V are the microcavity quality-factor and mode-volume, respectively. Here we demonstrate that microdisk whispering gallery mode cavities with high Q/V can be fabricated directly from bulk single crystal diamond. By using a quasi-isotropic oxygen plasma to etch along diamond crystal planes and undercut passivated diamond structures, we create monolithic diamond microdisks. Fiber taper based measurements show that these devices support TE- and TM-like optical modes with Q > 1.1 × 10(5) and V < 11(λ/n) (3) at a wavelength of 1.5 μm.

Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications

NASA Astrophysics Data System (ADS)

Smith, L.; Murphy, J. W.; Kim, J.; Rozhdestvenskyy, S.; Mejia, I.; Park, H.; Allee, D. R.; Quevedo-Lopez, M.; Gnade, B.

2016-12-01

Solid-state neutron detectors offer an alternative to 3He based detectors, but suffer from limited neutron efficiencies that make their use in security applications impractical. Solid-state neutron detectors based on single crystal silicon also have relatively high gamma-ray efficiencies that lead to false positives. Thin film polycrystalline CdTe based detectors require less complex processing with significantly lower gamma-ray efficiencies. Advanced geometries can also be implemented to achieve high thermal neutron efficiencies competitive with silicon based technology. This study evaluates these strategies by simulation and experimentation and demonstrates an approach to achieve >10% intrinsic efficiency with <10-6 gamma-ray efficiency.

Superconductivity at 5 K in quasi-one-dimensional Cr-based KCr3As3 single crystals

NASA Astrophysics Data System (ADS)

Mu, Qing-Ge; Ruan, Bin-Bin; Pan, Bo-Jin; Liu, Tong; Yu, Jia; Zhao, Kang; Chen, Gen-Fu; Ren, Zhi-An

2017-10-01

Recently a new family of Cr-based A2Cr3As3 (A =K , Rb, Cs) superconductors was reported, which own a rare quasi-one-dimensional (Q1D) crystal structure with infinite (Cr3As3) 2 - chains and exhibit intriguing superconducting characteristics possibly derived from spin-triplet electron pairing. The crystal structure of A2Cr3As3 is actually a slight variation of the hexagonal TlFe3Te3 prototype, although they have different lattice symmetry. Here we report superconductivity in a 133-type KCr3As3 compound that belongs to the latter structure. The single crystals of KCr3As3 were prepared by the deintercalation of K ions from K2Cr3As3 crystals which were grown from a high-temperature solution growth method, and it owns a centrosymmetric lattice in contrast to the noncentrosymmetric K2Cr3As3 . After annealing at a moderate temperature, the KCr3As3 crystals show superconductivity at 5 K revealed by electrical resistivity, magnetic susceptibility, and heat capacity measurements. The discovery of this KCr3As3 superconductor provides a different structural instance to study the exotic superconductivity in these Q1D Cr-based superconductors.

Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates

NASA Astrophysics Data System (ADS)

Wijewarnasuriya, Priyalal S.; Chen, Yuanping; Brill, Gregory; Dhar, Nibir K.; Carmody, Michael; Bailey, Robert; Arias, Jose

2006-05-01

At the Army Research Laboratory (ARL), a new ternary semiconductor system CdSe xTe 1-x/Si(211) is being investigated as an alternative substrate to bulk-grown CdZnTe substrates for HgCdTe growth by molecular beam epitaxy. Under optimized conditions, best layers show surface defect density less than 400 cm -2 and full width at half maximum of X-ray double crystal rocking curve as low as 100 arc-sec with excellent uniformity over 3 inch area. LW-HgCdTe layers on these compliant substrates exhibit comparable electrical properties to those grown on bulk CZT substrates. Photovoltaic devices fabricated on these LWIR material shows diffusion limited performance at 78K indicating high quality material. Measured R °A at 78K on λ co = 10 μm material is on the order of 340 Ω-cm II. In addition to single devices, we have fabricated 256x256 2-D arrays with 40 μm pixel pitch on LW-HgCdTe grown on Si compliant substrates. Data shows excellent QE operability of 99% at 78K under a tactical background flux of 6.7x10 15 ph/cm2sec. Most probable dark current at the peak distribution is 5.5 x 10 9 e-/sec and is very much consistent with the measured R °A values from single devices. Initial results indicate NETD of 33 mK for a cut-off wavelength of 10 μm with 40 micron pixels size. This work demonstrates CdSe xTe 1-x/Si(211) substrates provides a potential road map to more affordable, robust 3 rd generation FPAs.

Energy scavenging based on a single-crystal PMN-PT nanobelt

NASA Astrophysics Data System (ADS)

Wu, Fan; Cai, Wei; Yeh, Yao-Wen; Xu, Shiyou; Yao, Nan

2016-03-01

Self-powered nanodevices scavenging mechanical energy require piezoelectric nanostructures with high piezoelectric coefficients. Here we report the fabrication of a single-crystal (1 - x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3 (PMN-PT) nanobelt with a superior piezoelectric constant (d33 = ~550 pm/V), which is approximately ~150%, 430%, and 2100% of the largest reported values for previous PMN-PT, PZT and ZnO nanostructures, respectively. The high d33 of the single-crystalline PMN-PT nanobelt results from the precise orientation control during its fabrication. As a demonstration of its application in energy scavenging, a piezoelectric nanogenerator (PNG) is built on the single PMN-PT nanobelt, generating a maximum output voltage of ~1.2 V. This value is ~4 times higher than that of a single-CdTe PNG, ~13 times higher than that of a single-ZnSnO3 PNG, and ~26 times higher than that of a single-ZnO PNG. The profoundly increased output voltage of a lateral PNG built on a single PMN-PT nanobelt demonstrates the potential application of PMN-PT nanostructures in energy harvesting, thus enriching the material choices for PNGs.

Energy scavenging based on a single-crystal PMN-PT nanobelt.

PubMed

Wu, Fan; Cai, Wei; Yeh, Yao-Wen; Xu, Shiyou; Yao, Nan

2016-03-01

Self-powered nanodevices scavenging mechanical energy require piezoelectric nanostructures with high piezoelectric coefficients. Here we report the fabrication of a single-crystal (1 - x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3 (PMN-PT) nanobelt with a superior piezoelectric constant (d33 = ~550 pm/V), which is approximately ~150%, 430%, and 2100% of the largest reported values for previous PMN-PT, PZT and ZnO nanostructures, respectively. The high d33 of the single-crystalline PMN-PT nanobelt results from the precise orientation control during its fabrication. As a demonstration of its application in energy scavenging, a piezoelectric nanogenerator (PNG) is built on the single PMN-PT nanobelt, generating a maximum output voltage of ~1.2 V. This value is ~4 times higher than that of a single-CdTe PNG, ~13 times higher than that of a single-ZnSnO3 PNG, and ~26 times higher than that of a single-ZnO PNG. The profoundly increased output voltage of a lateral PNG built on a single PMN-PT nanobelt demonstrates the potential application of PMN-PT nanostructures in energy harvesting, thus enriching the material choices for PNGs.

Concentration and structure inhomogeneities in GaSb(Si) single crystals grown at different heat and mass transfer conditions

NASA Astrophysics Data System (ADS)

Serebryakov, Yu. A.; Prokhorov, I. A.; Vlasov, V. N.; Korobeynikova, E. N.; Zakharov, B. G.; Shul'pina, I. L.; Marchenko, M. P.; Fryazinov, I. V.

2007-06-01

Results of ground-based experiments on crystallization of gallium antimonide on the POLIZON facility carried out within the framework of space experiment preparation aboard FOTON satellite are submitted. Technical and technological opportunities of suppression of disturbing factors for improvement of quality of grown crystals in space are substantiated. Features of formation of concentration and structure inhomogeneities in GaSb:Si crystals grown under non-stationary and stationary convection conditions are investigated. Experimental data about structure and dopant distribution inhomogeneities are discussed taking into account results of numerical researches of GaSb:Si crystallization. Also earlier received results of modeling of GaSb:Te crystallization under close temperature conditions are used. Correlation between computational and experimental data is shown. The data on intensity of flows close to crystallization front are received at which non-stationary or stationary conditions of crystallization are realized. The forecast for space conditions is made. The influence of a rotating magnetic field on convection in melt for application in space experiment projected is investigated.

Low-temperature thermoelectric properties of the electron-doped perovskites SrTi1-xNbxO3

NASA Astrophysics Data System (ADS)

Okuda, Tetsuji; Fukuyado, Junichi; Narikiyo, Kuraihito; Akaki, Mitsuru; Kuwahara, Hideki

2014-03-01

Electron-doped perovskite SrTiO3 is one of the candidates of the n-type oxide thermoelectric materials. In this study, we have investigated thermoelectric (TE) properties for single crystals of SrTi1-xNbxO3 for 0 <= x <= 0.03 below room temperature. We found that SrTi0.99Nb0.01O3 shows a large power factor at low temperature (PF = 50 μW/K2 cm at 100 K - 90 μW/K2 cm at 50 K) and the largest dimensionless TE figure-of-merit below 40 K (ZT ~ 0.07) among the reported materials. Such a large low-temperature TE response around a carrier concentration of 1020 cm-3 is due to a distinct phonon drag effect, i.e., a distinct electron-phonon interaction, which could relate to the superconducting state.

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 − x GeTe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus

2018-04-09

Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 - x GeTe 2

DOE PAGES

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus; ...

2018-04-09

Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 - x GeTe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus

Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

Low-temperature thermoelectric properties of the electron-doped perovskites Sr1- x Ca x Ti1- y Nb y O3

NASA Astrophysics Data System (ADS)

Okuda, Tetsuji; Fukuyado, Junichi; Narikiyo, Kurahito; Akaki, Mitsuru; Kuwahara, Hideki

2013-08-01

We have investigated the thermoelectric (TE) properties for single crystals of the perovskites Sr1- x Ca x Ti1- y Nb y O3 for 0 ≤ x ≤ 0.4 and 0 ≤ y ≤ 0.03 at temperatures below room temperature (RT). We found that SrTi0.99Nb0.01O3 showed a large power factor at low temperatures ( PF = 50 µW/K2cm at 100 K ˜ 90 µW/K2cm at 50 K) and the largest dimensionless TE figure-ofmerit at temperatures below 40 K ( ZT ˜ 0.07) among the reported materials. Such a large low-temperature TE response around a carrier concentration of 1020 cm-3 is due to a distinct phonon drag effect. We also found that the Ca2+ substitution for Sr2+ increased the ZT at 300 K for Sr1- x Ca x Ti0.97Nb0.03O3 from 0.08 to 0.105. The enhancement of the ZT around RT originates both from a large reduction of a thermal conductivity due to a randomness introduced into the crystal structure and from an unexpected enhancement of a Seebeck coefficient.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Assoud, Abdeljalil; Soheilnia, Navid; Kleinke, Holger

The title compounds were prepared from the elements in the stoichiometric ratio at 800deg. C under exclusion of air. Tl{sub 6}Si{sub 2}Te{sub 6} crystallizes in the space group P1-bar , isostructural with Tl{sub 6}Ge{sub 2}Te{sub 6}, with a=9.4235(6)A, b=9.6606(7)A, c=10.3889(7)A, {alpha}=89.158(2){sup o}, {beta}=96.544(2){sup o}, {gamma}=100.685(2){sup o}, V=923.3(1)A{sup 3} (Z=2). Its structure is composed of dimeric [Si{sub 2}Te{sub 6}]{sup 6-} units with a Si-Si single bond, while the Tl atoms are irregularly coordinated by five to six Te atoms. Numerous weakly bonding Tl-Tl contacts exist. Both title compounds are black semiconductors with small band gaps, calculated to be 0.9eV for Tl{submore » 6}Si{sub 2}Te{sub 6} and 0.5eV for Tl{sub 6}Ge{sub 2}Te{sub 6}. The Seebeck coefficients are +65{mu}VK{sup -1} in case of Tl{sub 6}Si{sub 2}Te{sub 6} and +150{mu}VK{sup -1} in case of Tl{sub 6}Ge{sub 2}Te{sub 6} at 300K, and the electrical conductivities are 5.5 and 3{omega}{sup -1}cm{sup -1}, respectively.« less

CdZnTe Background Measurements at Balloon Altitudes with PoRTIA

NASA Technical Reports Server (NTRS)

Parsons, A.; Barthelmy, S.; Bartlett, L.; Gehrels, N.; Naya, J.; Stahle, C. M.; Tueller, J.; Teegarden, B.

2003-01-01

Measurements of the CdZnTe internal background at balloon altitudes are essential to determine which physical processes make the most important background contributions. We present results from CdZnTe background measurements made by PoRTIA, a small CdZnTe balloon instrument that was flown three times in three different shielding configurations. PoRTIA was passively shielded during its first flight from Palestine, Texas and actively shielded as a piggyback instrument on the GRIS balloon experiment during its second and third flights from Alice Springs, Australia, using the thick GRIS Nal anticoincidence shield. A significant CdZnTe background reduction was achieved during the third flight with PoRTIA placed completely inside the GRIS shield and blocking crystal, and thus completely surrounded by 15 cm of Nal. A unique balloon altitude background data set is provided by CdZnTe and Ge detectors simultaneously surrounded by the same thick anticoincidence shield; the presence of a single coxial Ge detector inside the shield next to PoRTIA allowed a measurement of the ambient neutron flux inside the shield throughout the flight. These neutrons interact with the detector material to produce isomeric states of the Cd, Zn and Te nuclei that radiatively decay; calculations are presented that indicate that these decays may explain most of the fully shielded CdZnTe background.

Large Area Cd0.9Zn0.1Te Pixelated Detector: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Chaudhuri, Sandeep K.; Nguyen, Khai; Pak, Rahmi O.; Matei, Liviu; Buliga, Vladimir; Groza, Michael; Burger, Arnold; Mandal, Krishna C.

2014-04-01

Cd0.9Zn0.1Te (CZT) based pixelated radiation detectors have been fabricated and characterized for gamma ray detection. Large area CZT single crystals has been grown using a tellurium solvent method. A 10 ×10 guarded pixelated detector has been fabricated on a 19.5 ×19.5 ×5 mm3 crystal cut out from the grown ingot. The pixel dimensions were 1.3 ×1.3 mm2 and were pitched at 1.8 mm. A guard grid was used to reduce interpixel/inter-electrode leakage. The crystal was characterized in planar configuration using electrical, optical and optoelectronic methods prior to the fabrication of pixelated geometry. Current-voltage (I-V) measurements revealed a leakage current of 27 nA at an operating bias voltage of 1000 V and a resistivity of 3.1 ×1010 Ω-cm. Infrared transmission imaging revealed an average tellurium inclusion/precipitate size less than 8 μm. Pockels measurement has revealed a near-uniform depth-wise distribution of the internal electric field. The mobility-lifetime product in this crystal was calculated to be 6.2 ×10 - 3 cm2/V using alpha ray spectroscopic method. Gamma spectroscopy using a 137Cs source on the pixelated structure showed fully resolved 662 keV gamma peaks for all the pixels, with percentage resolution (FWHM) as high as 1.8%.

Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force

NASA Astrophysics Data System (ADS)

Tanabe, Tadao; Zhao, Shu; Sato, Yohei; Oyama, Yutaka

2017-10-01

The interplanar binding strength of layered GaSe1-xTex crystals was directly measured using a tensile testing machine. The GaSe1-xTex crystals were grown by a low temperature liquid phase solution method under a controlled Se vapor pressure. The stoichiometry-controlled GaSe1-xTex crystal has the ɛ-polytype structure of GaSe, where the Te atoms are substituted for some of the Se atoms in the GaSe crystal. The effect of adding Te on the bonding strength between the GaSe layers was determined from direct measurements of the van der Waals bonding energy. The bonding energy was increased from 0.023 × 106 N/m2 for GaSe to 0.16 × 106 N/m2 for GaSe1-xTex (x = 0.106).

Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

PubMed Central

Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

2016-01-01

Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

The synthesis and crystal structure of α-Ca 3UO 6

NASA Astrophysics Data System (ADS)

Holc, J.; Golic̆, L.

1983-07-01

Single crystals of α-Ca 3UO 6 were grown from a UO 3CaCl 2CaO melt by the slow cooling method from 950°C. The crystal structure was determined by means of X-ray diffraction with R = 0.032 and Rw = 0.019. The structure of α-Ca 3UO 6 is of Mg 3TeO 6 type. α-Ca 3UO 6 is rhombohedral with a = 6.729 (1)Å, α = 90.30 (1)°, Z = 2, Dc = 4.955 g/cm 3, Dm = 4.79 g/cm 3, space group R overline3. Uranium and calcium atoms are six-coordinated. At 1200°C rhombohedral α-Ca 3UO 6 irreversibly transforms to monoclinic β-Ca 3UO 6.

Study of tellurium precipitates in CdTe crystals

NASA Technical Reports Server (NTRS)

Jayatirtha, H. N.; Henderson, D. O.; Burger, A.; Volz, M. P.

1993-01-01

The effect of tellurium precipitates was studied in medium resistivity (10 exp 3-10 exp 6 ohm cm) undoped and Cl-doped CdTe using differential scanning calorimetry (DSC) and mid-infrared spectroscopy and the results were correlated with near-infrared microscopy photographs. When present in a significant quantity (about 0.25 wt pct), we show that Te precipitates are detectable using DSC measurements. In the mid-infrared, the contribution of the absorption by free-carriers is negligible, and therefore, the effect of the Te precipitates in these crystals can be considered uncoupled from the effects of Cd vacancies.

Studies on Se75Te25-x In x chalcogenide glasses; a material for phase change memory

NASA Astrophysics Data System (ADS)

Srivastava, Archana; Tiwari, S. N.; Alvi, M. A.; Khan, Shamshad A.

2018-01-01

This research paper describes the non-isothermal crystallization during phase transformation in Se75Te25-x In x glasses synthesized by melt quenching method. For crystallization studies in these glasses, non-isothermal differential scanning calorimetry (DSC) measurements was done at constant heating rates of 5, 10, 15, 20 and 25 K min-1 in air atmosphere. The glass transition temperature (T g), on-set crystallization temperature (T c), peak crystallization temperature (T p) and melting temperatures (T m) were derived by DSC thermograms. Using various thermal parameters the activation energy of glass transition and crystallization were determined by using Kissinger, Moynihan and Ozawa approaches and found to be in good agreement. The value of the activation energy of glass transition (ΔE t) was found to be minimum for Se75Te19In6 alloys confirming its maximum probability of transition in a metastable state. Thermal stability parameters of Se75Te25-x In x were determined and found to be increased with indium content. High resolution x-ray diffraction and field emission scanning electron microscopy studies were employed for the study of phase transformation in Se75Te25-x In x glasses. The outcome of these studies shows that the investigated materials may be suitable for phase change memory devices.

Integration of a photonic crystal polarization beam splitter and waveguide bend.

PubMed

Zheng, Wanhua; Xing, Mingxin; Ren, Gang; Johnson, Steven G; Zhou, Wenjun; Chen, Wei; Chen, Lianghui

2009-05-11

In this work, we present the design of an integrated photonic-crystal polarization beam splitter (PC-PBS) and a low-loss photonic-crystal 60 degrees waveguide bend. Firstly, the modal properties of the PC-PBS and the mechanism of the low-loss waveguide bend are investigated by the two-dimensional finite-difference time-domain (FDTD) method, and then the integration of the two devices is studied. It shows that, although the individual devices perform well separately, the performance of the integrated circuit is poor due to the multi-mode property of the PC-PBS. By introducing deformed airhole structures, a single-mode PC-PBS is proposed, which significantly enhance the performance of the circuit with the extinction ratios remaining above 20 dB for both transverse-electric (TE) and transverse-magnetic (TM) polarizations. Both the specific result and the general idea of integration design are promising in the photonic crystal integrated circuits in the future.

Femtosecond laser pulse induced phase transition of Cr-doped Sb2Te1 films studied with a pump-probe system

NASA Astrophysics Data System (ADS)

Jiang, Minghui; Wang, Qing; Lei, Kai; Wang, Yang; Liu, Bo; Song, Zhitang

2016-10-01

The Femtosecond laser pulse induced phase transition dynamics of Cr-doped Sb2Te1 films was studied by real-time reflectivity measurements with a pump-probe system. It was found that crystallization of the as-deposited CrxSb2Te1 phase-change thin films exhibits a multi-stage process lasting for about 40ns.The time required for the multi-stage process seems to be not related to the contents of Cr element. The durations of the crystallization and amorphization processes are approximately the same. Doping Cr into Sb2Te1 thin film can improve its photo-thermal stability without obvious change in the crystallization rate. Optical images and image intensity cross sections are used to visualize the transformed regions. This work may provide further insight into the phase-change mechanism of CrxSb2Te1 under extra-non-equilibrium conditions and aid to develop new ultrafast phase-change memory materials.

Charge transport properties in CdZnTe detectors grown by the vertical Bridgman technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auricchio, N.; Caroli, E.; Marchini, L.

2011-12-15

Presently, a great amount of effort is being devoted to the development of CdTe and CdZnTe (CZT) detectors for a large variety of applications such as medical, industrial, and space research. We present the spectroscopic properties of some CZT crystals grown by the standard vertical Bridgman method and by the boron oxide encapsulated vertical Bridgman method, which has been recently implemented at IMEM-CNR (Parma, Italy). In this technique, the crystal is grown in an open quartz crucible fully encapsulated by a thin layer of liquid boron oxide. This method prevents contact between the crystal and the crucible, thereby allowing largermore » single grains with a lower dislocation density to be obtained. Several mono-electrode detectors were realized, with each having two planar gold contacts. The samples are characterized by an active area of about 7 mm x 7 mm and thicknesses ranging from 1 to 2 mm. The charge transport properties of the detectors have been studied by mobility-lifetime ({mu} x {tau}) product measurements, carried out at the European Synchrotron Radiation Facility (Grenoble, France) in the planar transverse field configuration, where the impinging beam direction is orthogonal to the collecting electric field. We have performed several fine scans between the electrodes with a beam spot of 10 {mu}m x 10 {mu}m at various energies from 60 to 400 keV. In this work, we present the test results in terms of the ({mu} x {tau}) product of both charge carriers.« less

Exploiting nonlinear properties of pure and Sn-doped Bi2Te2Se for passive Q-switching of all-polarization maintaining ytterbium- and erbium-doped fiber lasers.

PubMed

Bogusławski, Jakub; Kowalczyk, Maciej; Iwanowski, Przemysław; Hruban, Andrzej; Diduszko, Ryszard; Piotrowski, Kazimierz; Dybko, Krzysztof; Wojciechowski, Tomasz; Aleszkiewicz, Marta; Sotor, Jarosław

2017-08-07

Due to their broadband nonlinear optical properties, low-dimensional materials are widely used for pulse generation in fiber and solid-state lasers. Here we demonstrate novel materials, Bi 2 Te 2 Se (BTS) and Sn-doped Bi 2 Te 2 Se (BSTS), which can be used as a universal saturable absorbers for distinct spectral regimes. The material was mechanically exfoliated from a bulk single-crystal and deposited onto a side-polished fiber. We have performed characterization of the fabricated devices and employed them in polarization-maintaining ytterbium- and erbium-doped fiber lasers. This enabled us to obtain self-starting passively Q-switched regime at 1 µm and 1.56 µm. The oscillators emitted stable, linearly polarized radiation with the highest single pulse energy approaching 692 nJ. Both lasers are characterized by the best performance observed in all-polarization maintaining Q-switched fiber lasers with recently investigated new saturable absorbers, which was enabled by a very high damage threshold of the devices. This demonstrates the great potential of the investigated materials for the ultrafast photonics community.

Understanding the evolution of anomalous anharmonicity in Bi 2 Te 3 - x Se x

DOE PAGES

Tian, Yao; Jia, Shuang; Cava, R. J.; ...

2017-03-08

The anharmonic effect in thermoelectrics has been a central topic for decades in both condensed matter physics and material science. However, despite the long-believed strong and complex anharmonicity in the Bi 2Te 3-xSe x series, experimental verification of anharmonicity and its evolution with doping remains elusive. We fill this important gap with high-resolution, temperature-dependent Raman spectroscopy in high-quality single crystals of Bi 2Te, Bi 2Te 2Se , and Bi 2Se 3 over the temperature range from 4 to 293 K. Klemens's model was employed to explain the renormalization of their phonon linewidths. The phonon energies of Bi 2Se 3 andmore » Bi 2Te 3 are analyzed in detail from three aspects: lattice expansion, cubic anharmonicity, and quartic anharmonicity. For the first time, we explain the evolution of anharmonicity in various phonon modes and across the series. Lastly, in particular, we find that the interplay between cubic and quartic anharmonicity is governed by their distinct dependence on the phonon density of states, providing insights into anomalous anharmonicity designing of new thermoelectrics.« less

Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

NASA Technical Reports Server (NTRS)

Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.;

Development of 4-Sides Buttable CdTe-ASIC Hybrid Module for X-ray Flat Panel Detector

NASA Astrophysics Data System (ADS)

Tamaki, Mitsuru; Mito, Yoshio; Shuto, Yasuhiro; Kiyuna, Tatsuya; Yamamoto, Masaya; Sagae, Kenichi; Kina, Tooru; Koizumi, Tatsuhiro; Ohno, Ryoichi

2009-08-01

A 4-sides buttable CdTe-ASIC hybrid module suitable for use in an X-ray flat panel detector (FPD) has been developed by applying through silicon via (TSV) technology to the readout ASIC. The ASIC has 128 times 256 channels of charge integration type readout circuitry and an area of 12.9 mm times 25.7 mm. The CdTe sensor of 1 mm thickness, having the same area and pixel of 100 mum pitch, was fabricated from the Cl-doped CdTe single crystal grown by traveling heater method (THM). Then the CdTe pixel sensor was hybridized with the ASIC using the bump-bonding technology. The basic performance of this 4-sides buttable module was evaluated by taking X-ray images, and it was compared with that of a commercially available indirect type CsI(Tl) FPD. A prototype CdTe FPD was made by assembling 9 pieces of the 4-sides buttable modules into 3 times 3 arrays in which the neighboring modules were mounted on the interface board. The FPD covers an active area of 77 mm times 39 mm. The results showed the great potential of this 4-sides buttable module for the new real time X-ray FPD with high spatial resolution.

Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells

NASA Astrophysics Data System (ADS)

Zhou, Xilin; Behera, Jitendra K.; Lv, Shilong; Wu, Liangcai; Song, Zhitang; Simpson, Robert E.

2017-09-01

By confining phase transitions to the nanoscale interface between two different crystals, interfacial phase change memory heterostructures represent the state of the art for energy efficient data storage. We present the effect of strain engineering on the electrical switching performance of the {{Sb}}2{{Te}}3-GeTe superlattice van der Waals devices. Multiple Ge atoms switching through a two-dimensional Te layer reduces the activation barrier for further atoms to switch; an effect that can be enhanced by biaxial strain. The out-of-plane phonon mode of the GeTe crystal remains active in the superlattice heterostructures. The large in-plane biaxial strain imposed by the {{Sb}}2{{Te}}3 layers on the GeTe layers substantially improves the switching speed, reset energy, and cyclability of the superlattice memory devices. Moreover, carefully controlling residual stress in the layers of {{Sb}}2{{Te}}3-GeTe interfacial phase change memories provides a new degree of freedom to design the properties of functional superlattice structures for memory and photonics applications.

Mercury-cadmium-telluride - Technical significance and microgravity relevance related to crystal growth

NASA Astrophysics Data System (ADS)

Walcher, H.; Diehl, R.; Baars, J.

The technical importance of the mixed-crystal system Hg(1-x)Cd(x)Te (MCT) is related to a growing interest in detector devices for the infrared spectral ranges of the two atmospheric 'windows'. Applications are not restricted to the military sector, but are also related to astronomy, archeology, medicine, construction engineering, fire fighting, and the determination of pollutants in the atmosphere. It is found that MCT is uniquely qualified for the considered applications, because no other material combines, in the same way, all the required characteristics. However, problems arise in connection with the need for pure, homogeneous, single crystals of adequate size, which are free of any defects. The best results in attempts to grow such crystals have been obtained in experiments utilizing the traveling heater method (THM). Remaining difficulties are caused by effects of gravity. It is, therefore, expected that the crystals needed can be produced under conditions of microgravity. Suitable experiments for exploring this possibility are discussed.

Electron-beam-irradiation-induced crystallization of amorphous solid phase change materials

NASA Astrophysics Data System (ADS)

Zhou, Dong; Wu, Liangcai; Wen, Lin; Ma, Liya; Zhang, Xingyao; Li, Yudong; Guo, Qi; Song, Zhitang

2018-04-01

The electron-beam-irradiation-induced crystallization of phase change materials in a nano sized area was studied by in situ transmission electron microscopy and selected area electron diffraction. Amorphous phase change materials changed to a polycrystalline state after being irradiated with a 200 kV electron beam for a long time. The results indicate that the crystallization temperature strongly depends on the difference in the heteronuclear bond enthalpy of the phase change materials. The selected area electron diffraction patterns reveal that Ge2Sb2Te5 is a nucleation-dominated material, when Si2Sb2Te3 and Ti0.5Sb2Te3 are growth-dominated materials.

Landau-level spectroscopy of massive Dirac fermions in single-crystalline ZrTe5 thin flakes

NASA Astrophysics Data System (ADS)

Jiang, Y.; Dun, Z. L.; Zhou, H. D.; Lu, Z.; Chen, K.-W.; Moon, S.; Besara, T.; Siegrist, T. M.; Baumbach, R. E.; Smirnov, D.; Jiang, Z.

2017-07-01

We report infrared magnetospectroscopy studies on thin crystals of an emerging Dirac material ZrTe5 near the intrinsic limit. The observed structure of the Landau-level transitions and zero-field infrared absorption indicate a two-dimensional Dirac-like electronic structure, similar to that in graphene but with a small relativistic mass corresponding to a 9.4-meV energy gap. Measurements with circularly polarized light reveal a significant electron-hole asymmetry, which leads to splitting of the Landau-level transitions at high magnetic fields. Our model, based on the Bernevig-Hughes-Zhang effective Hamiltonian, quantitatively explains all observed transitions, determining the values of the Fermi velocity, Dirac mass (or gap), electron-hole asymmetry, and electron and hole g factors.

Dewetting During the Crystal Growth of (Cd,Zn)Te:In Under Microgravity

NASA Astrophysics Data System (ADS)

Sylla, Lamine; Fauler, Alex; Fiederle, Michael; Duffar, Thierry; Dieguez, Ernesto; Zanotti, Lucio; Zappettini, Andrea; Roosen, GÉrald

2009-08-01

The phenomenon of ldquodewettingrdquo associated with the Vertical Bridgman (VB) crystal growth technique leads to the growth of a crystal without contact with the crucible. One dramatic consequence of this modified VB process is the reduction of structural defects within the crystal. It has been observed in several microgravity experiments for different semiconductor crystals. This work is concentrated on the growth of high resistivity (Cd,Zn)Te:In (CZT) crystals by achieving the phenomenon of dewetting under microgravity condition and its application in the processing of CZT detectors. Two Cd0.9Zn0.1Te:In crystals were grown in space on the Russian FOTON satellite in the POLIZON-M facility in September 2007 (mission M3). At the end of the preliminary melting phase of one crystal, a Rotating Magnetic Field (RMF) was applied in order to reduce the typical tellurium clusters within the melt before the pulling. The other crystal was superheated with 20 K above the melting point before the pulling. A third reference crystal has been grown on the ground in similar thermal conditions. Profiles measurements of the space grown crystals surface gave the evidence of a successful dewetting during the crystal growth. Characterization methods such as IR microscopy and CoReMa have been performed on the three crystals. CZT detectors have been processed from the grown part of the different crystals. The influence of the dewetting on the material quality and the detector properties completes the study.

The Role of Adaptive Photorefractive Power Limiting on Acousto-Optic Radio Frequency (RF) Signal Excision

DTIC Science & Technology

2001-12-01

using TeO2 , A-O cell, slow acoustic wave). Beam deflection is a continuous function of the input voltage power spectrum; however, the spot width...than for isotropic crystals. Thus, anisotropic, A-O materials, such as TeO2 , have advantages for high RF bandwidth; slow acoustic speeds give better...112 Unfortunately, signal resolution worsened because the new TeO2 crystal was designed to operate in the longitudinal acoustic mode, ua = 5.5 Km

Crystal Growth, Characterization and Fabrication of Cadmium Zinc Telluride-based Nuclear Detectors

NASA Astrophysics Data System (ADS)

Krishna, Ramesh M.

In today's world, nuclear radiation is seeing more and more use by humanity as time goes on. Nuclear power plants are being built to supply humanity's energy needs, nuclear medical imaging is becoming more popular for diagnosing cancer and other diseases, and control of weapons-grade nuclear materials is becoming more and more important for national security. All of these needs require high-performance nuclear radiation detectors which can accurately measure the type and amount of radiation being used. However, most current radiation detection materials available commercially require extensive cooling, or simply do not function adequately for high-energy gamma-ray emitting nuclear materials such as uranium and plutonium. One of the most promising semiconductor materials being considered to create a convenient, field-deployable nuclear detector is cadmium zinc telluride (CdZnTe, or CZT). CZT is a ternary semiconductor compound which can detect high-energy gamma-rays at room temperature. It offers high resistivity (≥ 1010 O-cm), a high band gap (1.55 eV), and good electron transport properties, all of which are required for a nuclear radiation detector. However, one significant issue with CZT is that there is considerable difficulty in growing large, homogeneous, defect-free single crystals of CZT. This significantly increases the cost of producing CZT detectors, making CZT less than ideal for mass-production. Furthermore, CZT suffers from poor hole transport properties, which creates significant problems when using it as a high-energy gamma-ray detector. In this dissertation, a comprehensive investigation is undertaken using a successful growth method for CZT developed at the University of South Carolina. This method, called the solvent-growth technique, reduces the complexity required to grow detector-grade CZT single crystals. It utilizes a lower growth temperature than traditional growth methods by using Te as a solvent, while maintaining the advantages of crystal homogeneity of other modern CZT growth techniques. However, information about crystals grown with this method has not been undertaken in a comprehensive way thus far. In this work, Cd0.9Zn0.1Te is grown using the solvent-growth method using zone-refined precursor materials loaded into carbon-coated quartz ampoules. Ampoules were sealed and crystal growth was performed using crystal growth furnaces built in-house at USC. Ingots 1-2" in diameter produced using the solvent-growth method were wafered, processed, and polished for characterization. Semiconductor characterization is performed on the CZT crystals to determine band gap, elemental stoichiometry, and electrical resistivity. Surface modification studies were undertaken to determine if surface leakage current can be reduced using sulfur passivation. XPS studies were used to confirm the effects of passivation on the surface states, and electrical characterization was performed to measure the effects of passivation on the CZT crystals. Deep-level and surface defect studies were conducted on the CZT samples to determine the type and intensity of defects present in the crystals which may affect detector performance. Finally, nuclear detectors were fabricated and characterized using analog and digital radiation detection systems to measure their performance and energy resolution.

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM{sub 2}InTe{sub 4} (M=Zn, Cd)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nolas, George S., E-mail: gnolas@usf.edu; Hassan, M. Shafiq; Dong, Yongkwan

Quaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn{sub 2}InSe{sub 4}. These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficientmore » and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications. - Graphical abstract: The structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. The unique crystal structure allows for relatively good electrical transports and therefore potential for thermoelectric applications. - Highlights: • The physical properties of CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. • These materials have potential for thermoelectric applications. • Their direct band gaps also suggest potential for photovoltaics applications.« less

Study on accumulated crystallization characteristics of amorphous Ge2Sb2Te5 induced by multi-pulsed laser irradiations with different fluences

NASA Astrophysics Data System (ADS)

Fan, T.; Liu, F. R.; Li, W. Q.; Guo, J. C.; Wang, Y. H.; Sun, N. X.; Liu, F.

2018-07-01

Accumulated crystallization characteristics of amorphous Ge2Sb2Te5 (a-GST) films induced by multi-pulsed laser irradiations with different fluences were investigated by x-ray diffraction (XRD), Raman spectroscopy and spectrophotometer. Solid-state transformation was performed at low fluence (LF, 30.5 mJ cm‑2), whereas melting-cooling transformation dominated at medium and high fluence (MF, 45.7 and HF, 61 mJ cm‑2). Solid-state transformation induced by subsequent LF pulses promoted the growth and coalescence of grains, linearly increasing the average grain size, accordingly causing blue-shifts of the Raman spectral peaks. For MF/HF pulse irradiated films, the relatively high laser fluence increased the melting depth and reduced the volume fraction of the crystalline state induced by individual pulses, thereby increasing the threshold of laser pulse numbers for XRD detectable crystallization. However, the remelting depth induced by subsequent MF/HF laser pulse progressively decreased. The remelting-recrystallization process refined grain sizes, which improved the red-shifts of Raman spectral peaks. Moreover, optical contrast increased dramatically compared to single laser irradiation and five-level storage could be realized for a linear increase of optical contrast. The present study is fundamental for realizing the potential of multi-level devices.

Enhanced thermoelectric performance driven by high-temperature phase transition in the phase change material Ge 4SbTe 5

DOE PAGES

Williams, Jared B.; Lara-Curzio, Edgar; Cakmak, Ercan; ...

2015-05-15

Phase change materials are identified for their ability to rapidly alternate between amorphous and crystalline phases and have large contrast in the optical/electrical properties of the respective phases. The materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase change materials researched today can be found on the pseudo-binary (GeTe) 1-x(Sb 2Te 3) x tie-line. While many compounds on this tie-line have been recognized as thermoelectric materials, here we focus on Ge 4SbTe 5, a single phase compound just off of the (GeTe) 1-x(Sb 2Te 3) xmore » tie-line, that forms in a stable rocksalt crystal structure at room temperature. We find that stoichiometric and undoped Ge 4SbTe 5 exhibits a thermal conductivity of ~1.2 W/m-K at high temperature and a large Seebeck coefficient of ~250 μV/K. The resistivity decreases dramatically at 623 K due to a structural phase transition which lends to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. In a more general sense the research presents evidence that phase change materials can potentially provide a new route to highly efficient thermoelectric materials for power generation at high temperature.« less

A multinuclear solid-state NMR study of the dimethyltin chalcogenides ((CH 3) 2SnE) 3, E  S,Se,Te

NASA Astrophysics Data System (ADS)

Gay, Ian D.; Jones, C. H. W.; Sharma, R. D.

The solid-state NMR spectra, measured using MAS, are reported for 13C, 119Sn, 77Se, and 125Te in the compounds (Me 2SnE) 3, E  S, Se, or Te. For ((CH 3) 2SnS) 3, tetragonal, three inequivalent carbons and two inequivalent tins are observed consistent with a reinterpretation of the crystal structure data of this compound which shows a twofold axis through opposing tin and sulfur atoms, the molecule being in a twisted-boat conformation. For the monoclinic form six inequivalent carbons and three inequivalent tins were observed. Chemical shifts for 13C and 119Sn and the magnitudes of the 2JSn Sn coupling constants are reported. The tetragonal forms of ((CH 3) 2SnSe) 3 and ((CH 3) 2SnTe) 3 show the presence of two inequivalent tin and chalcogen atoms and three inequivalent carbons, again consistent with a twofold axis. In these compounds it is possible to identify the three different observed single-bond coupling constants with the distinct crystallographically determined tin-chalcogen bonds. The 13C, 119Sn, 77Se, and 125Te chemical shifts are reported, together with the magnitude of 1JSn E (E  Se or Te). In addition to isotropic shifts and couplings, chemical-shift anisotropies are reported for Sn, Se, and Te.

Synthesis of Multishell Nanoplates by Consecutive Epitaxial Growth of Bi2Se3 and Bi2Te3 Nanoplates and Enhanced Thermoelectric Properties.

PubMed

Min, Yuho; Park, Gyeongbae; Kim, Bongsoo; Giri, Anupam; Zeng, Jie; Roh, Jong Wook; Kim, Sang Il; Lee, Kyu Hyoung; Jeong, Unyong

2015-07-28

We herein demonstrate the successive epitaxial growth of Bi2Te3 and Bi2Se3 on seed nanoplates for the scalable synthesis of heterostructured nanoplates (Bi2Se3@Bi2Te3) and multishell nanoplates (Bi2Se3@Bi2Te3@Bi2Se3, Bi2Se3@Bi2Te3@Bi2Se3@Bi2Te3). The relative dimensions of the constituting layers are controllable via the molar ratios of the precursors added to the seed nanoplate solution. Reduction of the precursors produces nanoparticles that attach preferentially to the sides of the seed nanoplates. Once attached, the nanoparticles reorganize epitaxially on the seed crystal lattices to form single-crystalline core-shell nanoplates. The nanoplates, initially 100 nm wide, grew laterally to 620 nm in the multishell structure, while their thickness increased more moderately, from 5 to 20 nm. The nanoplates were pelletized into bulk samples by spark plasma sintering and their thermoelectric properties are compared. A peak thermoelectric figure of merit (ZT) ∼0.71 was obtained at 450 K for the bulk of Bi2Se3@Bi2Te3 nanoplates by simultaneous modulation of electronic and thermal transport in the presence of highly dense grain and phase boundaries.

Self-compensation in arsenic doping of CdTe

DOE PAGES

Ablekim, Tursun; Swain, Santosh K.; Yin, Wan -Jian; ...

2017-07-04

Efficient p-type doping in CdTe has remained a critical challenge for decades, limiting the performance of CdTe-based semiconductor devices. Arsenic is a promising p-type dopant; however, reproducible doping with high concentration is difficult and carrier lifetime is low. We systematically studied defect structures in As-doped CdTe using high-purity single crystal wafers to investigate the mechanisms that limit p-type doping. Two As-doped CdTe with varying acceptor density and two undoped CdTe were grown in Cd-rich and Te-rich environments. The defect structures were investigated by thermoelectric-effect spectroscopy (TEES), and first-principles calculations were used for identifying and assigning the experimentally observed defects. Measurementsmore » revealed activation of As is very low in both As-doped samples with very short lifetimes indicating strong compensation and the presence of significant carrier trapping defects. Defect studies suggest two acceptors and one donor level were introduced by As doping with activation energies at ~88 meV, ~293 meV and ~377 meV. In particular, the peak shown at ~162 K in the TEES spectra is very prominent in both As-doped samples, indicating a signature of AX-center donors. In conclusion, the AX-centers are believed to be responsible for most of the compensation because of their low formation energy and very prominent peak intensity in TEES spectra.« less

Self-compensation in arsenic doping of CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ablekim, Tursun; Swain, Santosh K.; Yin, Wan -Jian

Efficient p-type doping in CdTe has remained a critical challenge for decades, limiting the performance of CdTe-based semiconductor devices. Arsenic is a promising p-type dopant; however, reproducible doping with high concentration is difficult and carrier lifetime is low. We systematically studied defect structures in As-doped CdTe using high-purity single crystal wafers to investigate the mechanisms that limit p-type doping. Two As-doped CdTe with varying acceptor density and two undoped CdTe were grown in Cd-rich and Te-rich environments. The defect structures were investigated by thermoelectric-effect spectroscopy (TEES), and first-principles calculations were used for identifying and assigning the experimentally observed defects. Measurementsmore » revealed activation of As is very low in both As-doped samples with very short lifetimes indicating strong compensation and the presence of significant carrier trapping defects. Defect studies suggest two acceptors and one donor level were introduced by As doping with activation energies at ~88 meV, ~293 meV and ~377 meV. In particular, the peak shown at ~162 K in the TEES spectra is very prominent in both As-doped samples, indicating a signature of AX-center donors. In conclusion, the AX-centers are believed to be responsible for most of the compensation because of their low formation energy and very prominent peak intensity in TEES spectra.« less

Thermal annealing effect on structural and thermoelectric properties of hexagonal Bi2Te3 nanoplate thin films by drop-casting technique

NASA Astrophysics Data System (ADS)

Hosokawa, Yuichi; Wada, Kodai; Tanaka, Masaki; Tomita, Koji; Takashiri, Masayuki

2018-02-01

High-purity hexagonal bismuth telluride (Bi2Te3) nanoplates were prepared by a solvothermal synthesis method, followed by the fabrication of nanoplate thin films by the drop-casting technique. The Bi2Te3 nanoplates exhibited a single-crystalline phase with a rhombohedral crystal structure. The nanoplates had a flat surface with edge sizes ranging from 500 to 2000 nm (average size of 1000 nm) and a thickness of less than 50 nm. The resulting Bi2Te3 nanoplate thin films were composed of well-aligned hexagonal nanoplates along the surface direction with an approximate film thickness of 40 µm. To tightly connect the nanoplates together within the thin films, thermal annealing was performed at different temperatures. We found that the thermoelectric properties, especially the Seebeck coefficient, were very sensitive to the annealing temperature. Finally, the optimum annealing temperature was determined to be 250 °C and the Seebeck coefficient and power factor were -300 µV/K and 3.5 µW/(cm·K2), respectively.

Single layer of MX3(M = Ti, Zr; X = S, Se, Te): a new platform for nano-electronics and optics

NASA Astrophysics Data System (ADS)

Jin, Yingdi; Li, Xingxing; Yang, Jinlong

A serial of two dimensional titanium and zirconium trichalcogenides nanosheets MX3 (M=Ti, Zr; X=S, Se, Te) are investigated based on first-principles calculations. The evaluated low cleavage energy indicates that stable two dimensional monolayers can be exfoliated from their bulk crystals in experiment. Electronic studies reveal very rich electronic properties in these monolayers, including metallic TiTe3 and ZrTe3, direct band gap semiconductor TiS3 and indirect band gap semiconductors TiSe3, ZrS3 and ZrSe3. The band gaps of all the semiconductors are between 0.57~1.90 eV, which implies their potential applications in nano-electronics. And the calculated effective masses demonstrate highly anisotropic conduction properties for all the semiconductors. Optically, TiS3 and TiSe3 monolayers exhibit good light absorption in the visible and near-infrared region respectively, indicating their potential applications in optical devices. In particular, the highly anisotropic optical absorption of TiS3 monolayer suggests it could be used in designing nano optical waveguide polarizers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Charkin, Dmitri O.; Black, Cameron; Downie, Lewis J.

Two new rare-earth – alkali – tellurium oxide halides were synthesized by a salt flux technique and characterized by single-crystal X-ray diffraction. The structures of the new compounds Cs{sub 7}Sm{sub 11}[TeO{sub 3}]{sub 12}Cl{sub 16} (I) and Rb{sub 7}Nd{sub 11}[TeO{sub 3}]{sub 12}Br{sub 16} (II) (both tetragonal, space group I4/mcm) correspond to the sequence of [MLn{sub 11}(TeO{sub 3}){sub 12}] and [M{sub 6}X{sub 16}] layers and bear very strong similarities to those of known selenite analogs. We discuss the trends in similarities and differences in compositions and structural details between the Se and Te compounds; more members of the family are predicted. -more » Graphical abstract: Two new rare-earth – alkali – tellurium oxide halides were predicted and synthesized. - Highlights: • Two new rare-earth – alkali – tellurium oxide halides were synthesized. • They adopt slab structure of rare earth-tellurium-oxygen and CsCl-like slabs. • The Br-based CsCl-like slabs have been observed first in this layered family.« less

In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission electron microscopy

NASA Astrophysics Data System (ADS)

Berthier, R.; Bernier, N.; Cooper, D.; Sabbione, C.; Hippert, F.; Noé, P.

2017-09-01

The crystallization mechanisms of prototypical GeTe phase-change material thin films have been investigated by in situ scanning transmission electron microscopy annealing experiments. A novel sample preparation method has been developed to improve sample quality and stability during in situ annealing, enabling quantitative analysis and live recording of phase change events. Results show that for an uncapped 100 nm thick GeTe layer, exposure to air after fabrication leads to composition changes which promote heterogeneous nucleation at the oxidized surface. We also demonstrate that protecting the GeTe layer with a 10 nm SiN capping layer prevents nucleation at the surface and allows volume nucleation at a temperature 50 °C higher than the onset of crystallization in the oxidized sample. Our results have important implications regarding the integration of these materials in confined memory cells.

High throughput screening using acoustic droplet ejection to combine protein crystals and chemical libraries on crystallization plates at high density

DOE PAGES

Teplitsky, Ella; Joshi, Karan; Ericson, Daniel L.; ...

2015-07-01

We describe a high throughput method for screening up to 1728 distinct chemicals with protein crystals on a single microplate. Acoustic droplet ejection (ADE) was used to co-position 2.5 nL of protein, precipitant, and chemicals on a MiTeGen in situ-1 crystallization plate™ for screening by co-crystallization or soaking. ADE-transferred droplets follow a precise trajectory which allows all components to be transferred through small apertures in the microplate lid. The apertures were large enough for 2.5 nL droplets to pass through them, but small enough so that they did not disrupt the internal environment created by the mother liquor. Using thismore » system, thermolysin and trypsin crystals were efficiently screened for binding to a heavy-metal mini-library. Fluorescence and X-ray diffraction were used to confirm that each chemical in the heavy-metal library was correctly paired with the intended protein crystal. Moreover, a fragment mini-library was screened to observe two known lysozyme We describe a high throughput method for screening up to 1728 distinct chemicals with protein crystals on a single microplate. Acoustic droplet ejection (ADE) was used to co-position 2.5 nL of protein, precipitant, and chemicals on a MiTeGen in situ-1 crystallization plate™ for screening by co-crystallization or soaking. ADE-transferred droplets follow a precise trajectory which allows all components to be transferred through small apertures in the microplate lid. The apertures were large enough for 2.5 nL droplets to pass through them, but small enough so that they did not disrupt the internal environment created by the mother liquor. Using this system, thermolysin and trypsin crystals were efficiently screened for binding to a heavy-metal mini-library. Fluorescence and X-ray diffraction were used to confirm that each chemical in the heavy-metal library was correctly paired with the intended protein crystal. A fragment mini-library was screened to observe two known lysozyme ligands using both co-crystallization and soaking. A similar approach was used to identify multiple, novel thaumatin binding sites for ascorbic acid. This technology pushes towards a faster, automated, and more flexible strategy for high throughput screening of chemical libraries (such as fragment libraries) using as little as 2.5 nL of each component.ds using both co-crystallization and soaking. We used a A similar approach to identify multiple, novel thaumatin binding sites for ascorbic acid. This technology pushes towards a faster, automated, and more flexible strategy for high throughput screening of chemical libraries (such as fragment libraries) using as little as 2.5 nL of each component.« less

Numerical Modeling of Physical Vapor Transport in Contactless Crystal Growth Geometry

NASA Technical Reports Server (NTRS)

Palosz, W.; Lowry, S.; Krishnam, A.; Przekwas, A.; Grasza, K.

1998-01-01

Growth from the vapor under conditions of limited contact with the walls of the growth ampoule is beneficial for the quality of the growing crystal due to reduced stress and contamination which may be caused by interactions with the growth container. The technique may be of a particular interest for studies on crystal growth under microgravity conditions: elimination of some factors affecting the crystal quality may make interpretation of space-conducted processes more conclusive and meaningful. For that reason, and as a part of our continuing studies on 'contactless' growth technique, we have developed a computational model of crystal growth process in such system. The theoretical model was built, and simulations were performed using the commercial computational fluid dynamics code, (CFD) ACE. The code uses an implicit finite volume formulation with a gray discrete ordinate method radiation model which accounts for the diffuse absorption and reflection of radiation throughout the furnace. The three-dimensional model computes the heat transfer through the crystal, quartz, and gas both inside and outside the ampoule, and mass transport from the source to the crystal and the sink. The heat transport mechanisms by conduction, natural convection, and radiation, and mass transport by diffusion and convection are modeled simultaneously and include the heat of the phase transition at the solid-vapor interfaces. As the thermal boundary condition, temperature profile along the walls of the furnace is used. For different thermal profiles and furnace and ampoule dimensions, the crystal growth rate and development of the crystal-vapor and source-vapor interfaces (change of the interface shape and location with time) are obtained. Super/under-saturation in the ampoule is determined and critical factors determining the 'contactless' growth conditions are identified and discussed. The relative importance of the ampoule dimensions and geometry, the furnace dimensions and its temperature, and the properties of the grown material are analyzed. The results of the simulations are compared with related experimental results on growth of CdTe, CdZnTe, ZnTe, PbTe, and PbSnTe crystals by this technique.

Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

NASA Astrophysics Data System (ADS)

Bragaglia, Valeria; Mio, Antonio M.; Calarco, Raffaella

2017-08-01

A high degree of vacancy ordering is obtained by annealing amorphous GeTe-Sb2Te3 (GST) alloys deposited on a crystalline substrate, which acts as a template for the crystallization. Under annealing the material evolves from amorphous to disordered rocksalt, to ordered rocksalt with vacancies arranged into (111) oriented layers, and finally converts into the stable trigonal phase. The role of the interface in respect to the formation of an ordered crystalline phase is studied by comparing the transformation stages of crystalline GST with and without a capping layer. The capping layer offers another crystallization interface, which harms the overall crystalline quality.

Influence of Si and N additions on structure and phase stability of Ge(2)Sb(2)Te(5) thin films.

PubMed

Kölpin, Helmut; Music, Denis; Laptyeva, Galyna; Ghadimi, Reza; Merget, Florian; Richter, Silvia; Mykhaylonka, Ruslàn; Mayer, Joachim; Schneider, Jochen M

2009-10-28

The influence of Si and N in Ge(2)Sb(2)Te(5) (space group [Formula: see text]) on structure and phase stability thereof was studied experimentally by thin film growth and characterization as well as theoretically by ab initio calculations. It was found that Si and N most probably accumulate in the amorphous matrix embedding Ge(2)Sb(2)Te(5) grains. The incorporation of Si and N in these samples causes an increase of the crystallization temperature and the formation of finer grains. N is more efficient in increasing the crystallization temperature and in reducing the grain size than Si which can be understood based on the bonding analysis. The incorporation of both Si and N in Ge(2)Sb(2)Te(5) is energetically unfavourable, leading to finer grains and larger crystallization temperatures. While in the case of Si additions no significant changes in bonding are observed, N additions appear to enable the formation of strong Te-N bonds in the amorphous matrix, which are shown to be almost twice as strong as the strongest bonds in unalloyed Ge(2)Sb(2)Te(5).

Rich structural chemistry in new alkali metal yttrium tellurites: three-dimensional frameworks of NaYTe4O10, KY(TeO3)2, RbY(TeO3)2, and a novel variant of hexagonal tungsten bronze, CsYTe3O8.

PubMed

Kim, Youngkwon; Lee, Dong Woo; Ok, Kang Min

2015-01-05

Pure polycrystalline phases and single crystals of four new quaternary alkali metal yttrium tellurites, NaYTe4O10, KY(TeO3)2, RbY(TeO3)2, and CsYTe3O8, have been prepared by solid-state and hydrothermal reactions using A2CO3 (A = Na, K, Rb, and Cs), Y(NO3)3·6H2O, Y2O3, and TeO2 as starting reagents. X-ray diffraction analyses suggest that NaYTe4O10 exhibits a highly symmetric three-dimensional (3D) framework consisting of YO8 square antiprisms and chains of TeO4 polyhedra. Within the framework, six- (6-) and eight-membered ring (8-MR) channels are observed. KY(TeO3)2 and RbY(TeO3)2 are isostructural to each other and reveal another 3D framework with structures containing YO6 octahedra and TeO3 trigonal pyramids with 4-MR and 12-MR channels. CsYTe3O8 shows a hexagonal tungsten bronze (HTB)-like topology composed of hexagonal tungsten oxide-like layers of TeO4 polyhedra and YO6 octahedral linkers with 3-MR and 6-MR channels. Thermal analyses, elemental analyses, and spectroscopic characterizations, such as UV-vis diffuse reflectance and infrared spectra, are presented, as are local dipole moment calculations for the constituent asymmetric polyhedra TeO3 and TeO4.

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing.

PubMed

Rao, Feng; Ding, Keyuan; Zhou, Yuxing; Zheng, Yonghui; Xia, Mengjiao; Lv, Shilong; Song, Zhitang; Feng, Songlin; Ronneberger, Ider; Mazzarello, Riccardo; Zhang, Wei; Ma, Evan

2017-12-15

Operation speed is a key challenge in phase-change random-access memory (PCRAM) technology, especially for achieving subnanosecond high-speed cache memory. Commercialized PCRAM products are limited by the tens of nanoseconds writing speed, originating from the stochastic crystal nucleation during the crystallization of amorphous germanium antimony telluride (Ge 2 Sb 2 Te 5 ). Here, we demonstrate an alloying strategy to speed up the crystallization kinetics. The scandium antimony telluride (Sc 0.2 Sb 2 Te 3 ) compound that we designed allows a writing speed of only 700 picoseconds without preprogramming in a large conventional PCRAM device. This ultrafast crystallization stems from the reduced stochasticity of nucleation through geometrically matched and robust scandium telluride (ScTe) chemical bonds that stabilize crystal precursors in the amorphous state. Controlling nucleation through alloy design paves the way for the development of cache-type PCRAM technology to boost the working efficiency of computing systems. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

ZnSe(Te)-based crystals and detectors for nondestructive testing and cargo inspection

NASA Astrophysics Data System (ADS)

Seminozhenko, V. P.; Ryzhikov, V. D.; Opolonin, A. D.; Lisetska, O. K.; Galkin, S. N.; Voronkin, E. F.; Kostyukevich, S. A.

2006-08-01

Due to disadvantages of scintillator ZnSe(Te) - poor transparence to own emission (10 -1 cm -1), long decay time, low density and Z eff-this material had no practical applications in the ranges of X-ray energies about 120-140 keV. After the development of dual energy X-ray inspection scanners, CT and digital radiography situation changed on the contrary at whole. Both theory and experiments show that now it is the best material for low energy array detectors. The pilot-industrial production of ZnSe(Te) crystals is organized, their usage in CT and inspection X-rays scanners being already started. It has become possible to get tomography imaging simultaneously with automatic recognition of dangerous objects and substances, which is due to the unique parameters of ZnSe(Te). Presently several leading western companies look for possibilities to use ZnSe(Te) for medical X-ray CT. Our aim was to unveil the nature of luminescence centers and the emission mechanism in crystals of ZnSe(Te) compounds with isovalent dopants from the results of our studies of optical, spectroscopic and kinetic characteriestics of these crystals. Basing on the obtained understanding of the emission centers, we aimed at creation of a reproducible production technology of scintillators for application in inspection and medical equipment. The research described in this publication was made possible in part by INTAS Project Ref. Nr. 05-104-7519.

Can high pressure I-II transitions in semiconductors be affected by plastic flow and nanocrystal precipitation in phase I?

NASA Astrophysics Data System (ADS)

Weinstein, B. A.; Lindberg, G. P.

Pressure-Raman spectroscopy in ZnSe and ZnTe single crystals reveals that Se and Te nano-crystals (NCs) precipitate in these II-VI hosts for pressures far below their I-II phase transitions. The inclusions are evident from the appearance and negative pressure-shift of the A1 Raman peaks of Se and Te (trigonal phase). The Se and Te NCs nucleate at dislocations and grain boundaries that arise from pressure-induced plastic flow. This produces chemical and structural inhomogeneities in the zincblende phase of the host. At substantially higher pressures, the I-II transition proceeds in the presence of these inhomogenities. This can affect the transition's onset pressure Pt and width ΔPt, and the occurrence of metastable phases along the transition path. Precipitation models in metals show that nucleation of inclusions depends on the Peierls stress τp and a parameter α related to the net free energy gained on nucleation. For favorable values of τp and α, NC precipitation at pressures below the I-II transition could occur in other compounds. We propose criteria to judge whether this is likely based on the observed ranges of τp in the hosts, and estimates of α derived from the cohesive energy densities of the NC materials. One finds trends that can serve as a useful guide, both to test the proposed criteria, and to decide when closer scrutiny of phase transition experiments is warranted, e.g., in powders where high dislocation densities are initially created

How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klie, Robert

It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functionalmore » theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.« less

Channeling technique to make nanoscale ion beams

NASA Astrophysics Data System (ADS)

Biryukov, V. M.; Bellucci, S.; Guidi, V.

2005-04-01

Particle channeling in a bent crystal lattice has led to an efficient instrument for beam steering at accelerators [Biryukov et al., Crystal Channeling and its Application at High Energy Accelerators, Springer, Berlin, 1997], demonstrated from MeV to TeV energies. In particular, crystal focusing of high-energy protons to micron size has been demonstrated at IHEP with the results well in match with Lindhard (critical angle) prediction. Channeling in crystal microstructures has been proposed as a unique source of a microbeam of high-energy particles [Bellucci et al., Phys. Rev. ST Accel. Beams 6 (2003) 033502]. Channeling in nanostructures (single-wall and multi-wall nanotubes) offers the opportunities to produce ion beams on nanoscale. Particles channeled in a nanotube (with typical diameter of about 1 nm) are trapped in two dimensions and can be steered (deflected, focused) with the efficiency similar to that of crystal channeling or better. This technique has been a subject of computer simulations, with experimental efforts under way in several high-energy labs, including IHEP. We present the theoretical outlook for making channeling-based nanoscale ion beams and report the experience with crystal-focused microscale proton beams.

Understanding the crystallization behavior of as-deposited Ti-Sb-Te alloys through real-time radial distribution functions.

PubMed

Zhu, Min; Xia, Mengjiao; Song, Zhitang; Cheng, Yan; Wu, Liangcai; Rao, Feng; Song, Sannian; Wang, Miao; Lu, Yegang; Feng, Songlin

2015-06-07

Phase change materials, successfully used in optical data-storage and non-volatile electronic memory, are well-known for their ultrafast crystallization speed. However, the fundamental understanding of their crystallization behavior, especially the nucleation process, is limited by present experimental techniques. Here, real-time radial distribution functions (RDFs), derived from the selected area electron diffractions, are employed as structural probes to comprehensively study both nucleation and subsequent growth stages of Ti-doped Sb2Te3 (TST) materials in the electron-irradiation crystallization process. It can be found that the incorporation of Ti atoms in Sb2Te3 forms wrong bonds such as Ti-Te, Ti-Sb, breaks the originally ordered atomic arrangement and diminishes the initial nucleus size of the as-deposited films, which results in better thermal stability. But these nuclei hardly grow until their sizes exceed a critical value, and then a rapid growth period starts. This means that an extended nucleation time is required to form the supercritical nuclei of TST alloys with higher concentration. Also, the increasing formation of four-membered rings, which served as nucleation sites, after doping excessive Ti is responsible for the change of the crystallization behavior from growth-dominated to nucleation-dominated.

Convective Influence on Radial Segregation During Unidirectional Solidification of the Binary Alloy HgCdTe

NASA Technical Reports Server (NTRS)

Watring, D. A.; Gillies, D. C.; Lehoczky, S. L.; Szofran, F. R.; Alexander, H.

1996-01-01

In order to simulate the space environment for basic research into the crystal growth mechanism, Hg(0.8)Cd(0.2)Te crystals were grown by the vertical Bridgman-Stockbarger method in the presence of an applied axial magnetic field. The influence of convection, by magneto hydrodynamic damping, on mass transfer in the melt and segregation at the solid-liquid interface was investigated by measuring the axial and radial compositional variations in the grown samples. The reduction of convective mixing in the melt through the application of the magnetic field is found to have a large effect on radial segregation and interface morphology in the grown crystals. Direct comparisons are made with a Hg(0.8)Cd(0.2)Te crystal grown without field and also in the microgravity environment of space during the second United States Microgravity Payload Mission (USMP-2).

Intrinsic Topological Insulator Bi1.5Sb0.5Te3-xSex Thin Crystals

NASA Astrophysics Data System (ADS)

Wang, Wei; Li, Li; Zou, Wenqin; He, Liang; Song, Fengqi; Zhang, Rong; Wu, Xiaoshan; Zhang, Fengming

2015-01-01

The quaternary topological insulator (Bi,Sb)2(Te,Se)3 has demonstrated topological surface states with an insulating bulk. Scientists have identified an optimized composition of Bi1.5Sb0.5Te1.7Se1.3 with the highest resistivity reported. But the physics that drive to this composition remains unclear. Here we report the crystal structure and the magneto-transport properties of Bi1.5Sb0.5Te3-xSex (BSTS) series. A correlation between the structure and the physical properties has been revealed. We found out that within the rhombohedral structure, the composition with most Te substituting Se has the highest resistivity. On the other hand, segregation of other composition phases will introduce much higher bulk concentration.

Superconducting, magnetic and magnetotransport properties of FeTe1-xSex single crystals

NASA Astrophysics Data System (ADS)

Kumar, Rohit; Sudesh, Varma, G. D.

2018-05-01

The single crystalline samples with compositions FeTe1-xSex (0.25 ≤ x ≤ 0.50) have been prepared via self-flux method and the superconducting, magnetic and magnetotransport properties of the grown crystals were investigated. The superconducting onset temperatures have been determined from the measurements of zero field cooled magnetization and resistance with temperatures. In the present case, highest superconducting transition temperature TC (onset) ˜ 15 K has been obtained for x=0.5. The HC2 (T=0 K) values have been estimated by fitting the experimental HC2 - T plots with WHH model. The highest HC2(0) has been obtained for x=0.5. The activation energy of the thermally activated flux flow has been found from the broadening of superconducting transition in an applied magnetic field using the Arrhenius law. Our results show that the activation energy (U0) decreases with the increasing magnetic field. Furthermore, the magnetization measurements for x=0.4 and 0.5 samples have been performed at T=5 K in the magnetic field range ±7 T to estimate critical current density at different applied magnetic fields using Bean formula. We see that the sample x=0.5 has higher values of JC as compared to that of x=0.4 at all magnetic fields. This is in conformity with the behavior of U0-H plots.

Crystallization kinetics and Avrami index of Sb-doped Se-Te-Sn chalcogenide glasses

NASA Astrophysics Data System (ADS)

Dwivedi, D. K.; Rao, Vandita; Mehta, N.; Chandel, N.

2018-05-01

Bulk amorphous samples of Sb-substituted Se78-xTe20Sn2Sbx (0 < x < 6) have been prepared using melt quench technique. The structure of Se78-xTe20Sn2Sbx (x = 0, 2, 4, 6) glassy alloys has been investigated using X-ray diffraction technique. Calorimetric studies of the prepared samples have been performed under non-isothermal conditions using differential scanning calorimetry (DSC) and glass transition temperature as well as crystallization temperature has been evaluated using DSC scans. The activation energy of crystallization kinetics (Ec) has been determined using model-free approaches such as Kissinger, Ozawa, Tang and Starink methods. The Avrami index (n) and frequency factor (Ko) have been calculated by Matusita and Augis-Benett method.

A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator

NASA Astrophysics Data System (ADS)

Kaveev, A. K.; Suturin, S. M.; Sokolov, N. S.; Kokh, K. A.; Tereshchenko, O. E.

2018-03-01

Laser molecular-beam epitaxy has been used to form Co40Fe40B20 layers on Bi2Te3 topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi2Te3. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.

Initial development of a high-pressure crystal growth facility: Center director's discretionary fund

NASA Technical Reports Server (NTRS)

Szofran, F. R.; Lehoczky, S. L.; Cobb, S. D.; Gillies, D. C.

1993-01-01

A low-cost, flexible, high-pressure (600 psi) system for crystal growth and related thermophysical properties measurements was designed, assembled, and tested. The furnace system includes a magnetically coupled translation mechanism that eliminates the need for a high-pressure mechanical feedthru. The system is currently being used for continuing crystal growth experiments and thermophysical properties measurements on several material systems including Hg(1-x)Cd(x)Te, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se.

Seeded Physical Vapor Transport of Cadmium-Zinc Telluride Crystals: Growth and Characterization

NASA Technical Reports Server (NTRS)

Palosz, W.; George, M. A.; Collins, E. E.; Chen, K.-T.; Zhang, Y.; Burger, A.

1997-01-01

Crystals of Cd(1-x)Zn(x)Te with x = 0.2 and 40 g in weight were grown on monocrystalline cadmium-zinc telluride seeds by closed-ampoule physical vapor transport with or without excess (Cd + Zn) in the vapor phase. Two post-growth cool-down rates were used. The crystals were characterized using low temperature photoluminescence, atomic force microscopy, chemical etching, X-ray diffraction and electrical measurements. No formation of a second, ZnTe-rich phase was observed.

Shuttle Mission STS-50: Orbital Processing of High-Quality CdTe Compound Semiconductors Experiment: Final Flight Sample Characterization Report

NASA Technical Reports Server (NTRS)

Larson, David J.; Casagrande, Luis G.; DiMarzio, Don; Alexander, J. Iwan D.; Carlson, Fred; Lee, Taipo; Dudley, Michael; Raghathamachar, Balaji

1998-01-01

The Orbital Processing of High-Quality Doped and Alloyed CdTe Compound Semiconductors program was initiated to investigate, quantitatively, the influences of gravitationally dependent phenomena on the growth and quality of bulk compound semiconductors. The objective was to improve crystal quality (both structural and compositional) and to better understand and control the variables within the crystal growth production process. The empirical effort entailed the development of a terrestrial (one-g) experiment baseline for quantitative comparison with microgravity (mu-g) results. This effort was supported by the development of high-fidelity process models of heat transfer, fluid flow and solute redistribution, and thermo-mechanical stress occurring in the furnace, safety cartridge, ampoule, and crystal throughout the melting, seeding, crystal growth, and post-solidification processing. In addition, the sensitivity of the orbital experiments was analyzed with respect to the residual microgravity (mu-g) environment, both steady state and g-jitter. CdZnTe crystals were grown in one-g and in mu-g. Crystals processed terrestrially were grown at the NASA Ground Control Experiments Laboratory (GCEL) and at Grumman Aerospace Corporation (now Northrop Grumman Corporation). Two mu-g crystals were grown in the Crystal Growth Furnace (CGF) during the First United States Microgravity Laboratory Mission (USML-1), STS-50, June 24 - July 9, 1992.

Differential Thermal Analysis of Hg(1-x)Mn(x)Te Alloys in the X=0 to 0.3 Range

NASA Technical Reports Server (NTRS)

Price, M. W.; Scripa, R. N.; Szofran, F. R.; Lehoczky, S. L.; Su, C-H

1998-01-01

Understanding the experimental conditions necessary for the development of radial and axial compositional homogeneity in directionally solidified Hg(0.89)Mn(0.11)Te(MMT) crystals has been difficult due to the lack of segregation coefficient data on the Hg(1-x)Mn(x)Te alloy system in the X = 0 to 0.3 composition range. Determining segregation coefficient data from the available Hg(1-x)Mn(x)Te alloy phase equilibria data is not practical due to discrepancies in the shape of the reported solidus and liquidus curves in the X = 0 to 0.3 range. To resolve these discrepancies and to obtain segregation coefficient data which can be used to understand homogeneity in directionally solidified MMT crystals, the solidus and liquidus temperatures of seven Hg(1-x)Mn(x)Te alloys in the X = 0 to 0.3 range were determined using differential thermal analysis (DTA). The Hg(1-x)Mn(x)Te phase diagram constructed for the X = 0 to 0.3 range of this alloy system from the DTA measurements clarifies the shape of the solidus and liquidus curves in this range. The segregation coefficient for the Hg(1-x)Mn(x)Te system was found to vary from 5 to 4.4 as the solidus composition increased from 0-30 atomic percent MnTe. This information will be useful in the analysis of axial and radial homogeneity of directionally solidified MMT crystals.

Exploratory Solid-State Synthesis of Uranium Chalcogenides and Mixed Anion Uranium Chalcogenides

NASA Astrophysics Data System (ADS)

Ward, Matthew David

Several uranium chalcogenides and mixed anion uranium chalcogenides have been synthesized by solid-state synthetic methods. Structural determinations were carried out via single-crystal X-ray diffraction. Some of these compounds have been further characterized by magnetic measurements, optical properties measurements, Raman spectroscopy, resistivity measurements, XANES and XPS. Eight compounds of the composition MU8Q17 were synthesized and characterized by single-crystal X-ray diffraction. All of these compounds crystallize in the CrU8S17 structure type. XANES measurements indicate that ScU8S17 contains Sc3+ and must be charge balanced with some amount of U 3+. Two compounds of the composition ATiU3Te9 crystallize as black rectangular plates. From single-crystal magnetic measurements, CsTiU 3Te9 is consistent with antiferromagnetic coupling between magnetic U atoms. The uranium chalcogenide compounds NiUS3 and Cr4US 8 were synthesized from reaction of the elements in various fluxes. NiUS3 crystallizes in the GdFeO3 structure type. Cr 4US8 crystallizes in the orthorhombic space group D - Pnma and its structure is related to that of Li4UF 8. The compounds Rh2U6S15, Cs 2Ti2U6Se15, and Cs2Cr 2U6Se15 crystallize as black prisms in the cubic space group O-Im3m. Magnetic measurements on Cs 2Cr2U6Se15 give a value for the Weiss temperature, θWeiss, of 57.59 K, indicative of ferromagnetic coupling. Black plates of CsScU(Se2)Se3 were synthesized from the reaction of the elements in a CsCl flux. CsScU(Se2)Se 3 crystallizes in the orthorhombic space group D- Cmcm . Magnetic susceptibility measurements on CsScU(Se2)Se 3 indicate three regions of magnetic response. The uranium double salt Cs5[U2(μ-S 2)2Cl8]I crystallizes as red plates. Cs 5[U2(μ-S2)2Cl 8]I displays optical anisotropy with band gap energies of 1.99 eV and 2.08 eV along the [001] and [100] polarizations. The uranium oxychalcogenides U7O2Se12 and Na2Ba2(UO2)S4 were synthesized by intentional oxygen contamination. The structure of U7O 2Se12 is related to the previously reported U7Q 12. Na2Ba2(UO2)S4 contains isolated uranyl polyhedra in which each uranium atom may be assigned an oxidation state of +6. The four uranium(IV) chlorophosphates, UCl4(POCl3), [U2Cl9][PCl4], UCl3(PO2Cl 2), and U2Cl8(POCl3) were synthesized in an effort to synthesize new novel uranyl sulfides. All are unstable, but UCl4(POCl3) is the thermodynamically favorable phase.

Synthesis and crystal structure of Fe[(Te1.5Se0.5)O5]Cl, the first iron compound with selenate(IV) and tellurate(IV) groups

NASA Astrophysics Data System (ADS)

Akhrorov, Akhmad Yu; Kuznetsova, Elena S.; Aksenov, Sergey M.; Berdonosov, Peter S.; Kuznetsov, Alexey N.; Dolgikh, Valery A.

2017-12-01

During the search for selenium analogues of FeTe2O5Cl, the new iron (III) tellurate(IV) selenate(IV) chloride with the composition Fe[(Te1.5Se0.5)O5]Cl was synthesized by chemical vapor transport (CVT) reaction and characterized by TGA-, EDX-,SCXRD-analysis, as well as IR and Raman spectroscopy. It was found that Fe[(Te1.5Se0.5)O5]Cl crystallizes in the monoclinic space group P21/c with unitcell parameters a = 5.183(3) Å, b = 15.521(9) Å, c = 7.128(5) Å and β = 107.16(1)°. The crystal structure of Fe[(Te1.5Se0.5)O5]Cl represents a new structure type and contains electroneutral heteropolyhedral layers formed by dimers of the [FeO5Cl]8- octahedra, linked via common O-O edges, and mixed [Te3SeO10]4- tetramers. Adjacent layers are stacked along the b axis and linked by weak residual bonds. The new compound is stable up to 420 °C. DFT calculations predict Fe[(Te1.5Se0.5)O5]Cl to be a wide-gap semiconductor with the band gap of ca. 2.7 eV.

Y{sub 2}MoSe{sub 3}O{sub 12} and Y{sub 2}MoTe{sub 3}O{sub 12}: Solid-state synthesis, structure determination, and characterization of two new quaternary mixed metal oxides containing asymmetric coordination environment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bang, Seong-eun; Pan, Zhi; Kim, Yeong Hun

Two new quaternary yttrium molybdenum selenium/tellurium oxides, Y{sub 2}MoSe{sub 3}O{sub 12} and Y{sub 2}MoTe{sub 3}O{sub 12} have been prepared by standard solid-state reactions using Y{sub 2}O{sub 3}, MoO{sub 3}, and SeO{sub 2} (or TeO{sub 2}) as reagents. Single-crystal X-ray diffraction was used to determine the crystal structures of the reported materials. Although both of the materials contain second-order Jahn–Teller (SOJT) distortive cations and are stoichiometrically similar, they reveal different structural features: while Y{sub 2}MoSe{sub 3}O{sub 12} shows a three-dimensional framework consisting of YO{sub 8}, MoO{sub 6}, and SeO{sub 3} groups, Y{sub 2}MoTe{sub 3}O{sub 12} exhibits a layered structure composed ofmore » YO{sub 8}, MoO{sub 4}, TeO{sub 3}, and TeO{sub 4} polyhedra. With the Mo{sup 6+} cations in Y{sub 2}MoSe{sub 3}O{sub 12}, a C{sub 3}-type intraoctahedral distortion toward a face is observed, in which the direction of the out-of-center distortion for Mo{sup 6+} is away from the oxide ligand linked to a Se{sup 4+} cation. The Se{sup 4+} and Te{sup 4+} cations in both materials are in asymmetric coordination environment attributed to the lone pairs. Elemental analyses, infrared spectroscopy, thermal analyses, intraoctahedral distortions, and dipole moment calculations for the compounds are also presented. - Graphical abstract: Y{sub 2}MoSe{sub 3}O{sub 12} reveals a three-dimensional framework consisting of YO{sub 8}, MoO{sub 6}, and SeO{sub 3} polyhedra, whereas Y{sub 2}MoTe{sub 3}O{sub 12} exhibits a layered structure composed of YO{sub 8}, MoO{sub 4}, TeO{sub 3}, and TeO{sub 4} groups. - Highlights: • Two new selenite and tellurite (Y{sub 2}MoQ{sub 3}O{sub 12}; Q=Se and Te) are synthesized. • Y{sub 2}MoQ{sub 3}O{sub 12} contain second-order Jahn–Teller distortive cations in asymmetric environments. • The intra-octahedral distortion of the Mo{sup 6+} is influenced by the Se{sup 4+}.« less

Bulk Fermi surface of the Weyl type-II semimetallic candidate γ - MoTe 2

DOE PAGES

Rhodes, D.; Schönemann, R.; Aryal, N.; ...

2017-10-17

The electronic structure of semi-metallic transition-metal dichalcogenides, such as WTemore » $$_2$$ and orthorhombic $$\\gamma-$$MoTe$$_2$$, are claimed to contain pairs of Weyl points or linearly touching electron and hole pockets associated with a non-trivial Chern number. For this reason, these compounds were recently claimed to conform to a new class, deemed type-II, of Weyl semi-metallic systems. A series of angle resolved photoemission experiments (ARPES) claim a broad agreement with these predictions detecting, for example, topological Fermi arcs at the surface of these crystals. We synthesized single-crystals of semi-metallic MoTe$$_2$$ through a Te flux method to validate these predictions through measurements of its bulk Fermi surface (FS) via quantum oscillatory phenomena. We find that the superconducting transition temperature of $$\\gamma-$$MoTe$$_2$$ depends on disorder as quantified by the ratio between the room- and low-temperature resistivities, suggesting the possibility of an unconventional superconducting pairing symmetry. Similarly to WTe$$_2$$, the magnetoresistivity of $$\\gamma-$$MoTe$$_2$$ does not saturate at high magnetic fields and can easily surpass $$10^{6}$$ \\%. Remarkably, the analysis of the de Haas-van Alphen (dHvA) signal superimposed onto the magnetic torque, indicates that the geometry of its FS is markedly distinct from the calculated one. The dHvA signal also reveals that the FS is affected by the Zeeman-effect precluding the extraction of the Berry-phase. A direct comparison between the previous ARPES studies and density-functional-theory (DFT) calculations reveals a disagreement in the position of the valence bands relative to the Fermi level $$\\varepsilon_F$$. Here in this paper, we show that a shift of the DFT valence bands relative to $$\\varepsilon_F$$, in order to match the ARPES observations, and of the DFT electron bands to explain some of the observed dHvA frequencies, leads to a good agreement between the calculations and the angular dependence of the FS cross-sectional areas observed experimentally. However, this relative displacement between electron- and hole-bands eliminates their crossings and, therefore, the Weyl type-II points predicted for $$\\gamma-$$MoTe$$_2$$« less

Bulk Fermi surface of the Weyl type-II semimetallic candidate γ -MoTe2

NASA Astrophysics Data System (ADS)

Rhodes, D.; Schönemann, R.; Aryal, N.; Zhou, Q.; Zhang, Q. R.; Kampert, E.; Chiu, Y.-C.; Lai, Y.; Shimura, Y.; McCandless, G. T.; Chan, J. Y.; Paley, D. W.; Lee, J.; Finke, A. D.; Ruff, J. P. C.; Das, S.; Manousakis, E.; Balicas, L.

2017-10-01

The electronic structure of semimetallic transition-metal dichalcogenides, such as WTe2 and orthorhombic γ -MoTe2 , are claimed to contain pairs of Weyl points or linearly touching electron and hole pockets associated with a nontrivial Chern number. For this reason, these compounds were recently claimed to conform to a new class, deemed type-II, of Weyl semimetallic systems. A series of angle-resolved photoemission experiments (ARPES) claim a broad agreement with these predictions detecting, for example, Fermi arcs at the surface of these crystals. We synthesized single crystals of semimetallic MoTe2 through a Te flux method to validate these predictions through measurements of its bulk Fermi surface (FS) via quantum oscillatory phenomena. We find that the superconducting transition temperature of γ -MoTe2 depends on disorder as quantified by the ratio between the room- and low-temperature resistivities, suggesting the possibility of an unconventional superconducting pairing symmetry. Similarly to WTe2, the magnetoresistivity of γ -MoTe2 does not saturate at high magnetic fields and can easily surpass 106%. Remarkably, the analysis of the de Haas-van Alphen (dHvA) signal superimposed onto the magnetic torque indicates that the geometry of its FS is markedly distinct from the calculated one. The dHvA signal also reveals that the FS is affected by the Zeeman effect precluding the extraction of the Berry phase. A direct comparison between the previous ARPES studies and density-functional-theory (DFT) calculations reveals a disagreement in the position of the valence bands relative to the Fermi level ɛF. Here, we show that a shift of the DFT valence bands relative to ɛF, in order to match the ARPES observations, and of the DFT electron bands to explain some of the observed dHvA frequencies, leads to a good agreement between the calculations and the angular dependence of the FS cross-sectional areas observed experimentally. However, this relative displacement between electron and hole bands eliminates their crossings and, therefore, the Weyl type-II points predicted for γ -MoTe2 .

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teplitsky, Ella; Joshi, Karan; Ericson, Daniel L.

We describe a high throughput method for screening up to 1728 distinct chemicals with protein crystals on a single microplate. Acoustic droplet ejection (ADE) was used to co-position 2.5 nL of protein, precipitant, and chemicals on a MiTeGen in situ-1 crystallization plate™ for screening by co-crystallization or soaking. ADE-transferred droplets follow a precise trajectory which allows all components to be transferred through small apertures in the microplate lid. The apertures were large enough for 2.5 nL droplets to pass through them, but small enough so that they did not disrupt the internal environment created by the mother liquor. Using thismore » system, thermolysin and trypsin crystals were efficiently screened for binding to a heavy-metal mini-library. Fluorescence and X-ray diffraction were used to confirm that each chemical in the heavy-metal library was correctly paired with the intended protein crystal. Moreover, a fragment mini-library was screened to observe two known lysozyme We describe a high throughput method for screening up to 1728 distinct chemicals with protein crystals on a single microplate. Acoustic droplet ejection (ADE) was used to co-position 2.5 nL of protein, precipitant, and chemicals on a MiTeGen in situ-1 crystallization plate™ for screening by co-crystallization or soaking. ADE-transferred droplets follow a precise trajectory which allows all components to be transferred through small apertures in the microplate lid. The apertures were large enough for 2.5 nL droplets to pass through them, but small enough so that they did not disrupt the internal environment created by the mother liquor. Using this system, thermolysin and trypsin crystals were efficiently screened for binding to a heavy-metal mini-library. Fluorescence and X-ray diffraction were used to confirm that each chemical in the heavy-metal library was correctly paired with the intended protein crystal. A fragment mini-library was screened to observe two known lysozyme ligands using both co-crystallization and soaking. A similar approach was used to identify multiple, novel thaumatin binding sites for ascorbic acid. This technology pushes towards a faster, automated, and more flexible strategy for high throughput screening of chemical libraries (such as fragment libraries) using as little as 2.5 nL of each component.ds using both co-crystallization and soaking. We used a A similar approach to identify multiple, novel thaumatin binding sites for ascorbic acid. This technology pushes towards a faster, automated, and more flexible strategy for high throughput screening of chemical libraries (such as fragment libraries) using as little as 2.5 nL of each component.« less

Understanding Growth Rate Limitations in Production of Single-Crystal Cadmium Zinc Telluride (CZT) by the Traveling Heater Method (THM)

NASA Astrophysics Data System (ADS)

Peterson, Jeffrey H.

Cadmium telluride (CdTe) and cadmium zinc telluride (CZT) are important optoelectronic materials with applications ranging from medical imaging to nuclear materials monitoring. However, CZT and CdTe have long been plagued by second-phase particles, inhomogeneity, and other defects. The traveling heater method (THM) is a promising approach for growing CZT and other compound semiconductors that has been shown to grow detector-grade crystals. In contrast to traditional directional solidification, the THM consists of a moving melt zone that simultaneously dissolves a polycrystalline feed while producing a single-crystal of material. Additionally, the melt is highly enriched in tellurium, which allows for growth at lower temperatures, limiting the presence of precipitated tellurium second-phase particles in the final crystal. Unfortunately, the THM growth of CZT is limited to millimeters per day when other growth techniques can grow an order of magnitude faster. To understand these growth limits, we employ a mathematical model of the THM system that is formulated to realistically represent the interactions of heat and species transport, fluid flow, and interfacial dissolution and growth under conditions of local thermodynamic equilibrium and steady-state growth. We examine the complicated interactions among zone geometry, continuum transport, phase change, and fluid flow driven by buoyancy. Of particular interest and importance is the formation of flow structures in the liquid zone of the THM that arise from the same physical mechanism as lee waves in atmospheric flows and demonstrate the same characteristic Brunt-Vaisala scaling. We show that flow stagnation and reversal associated with lee-wave formation are responsible for the accumulation of tellurium and supercooled liquid near the growth interface, even when the lee-wave vortex is not readily apparent in the overall flow structure. The supercooled fluid is posited to result in morphological instability at growth rates far below the limit predicted by the classical criterion by Tiller et al. for constitutional supercooling.

Electronic Correlation and Magnetism in the Ferromagnetic Metal Fe 3GeTe 2

DOE PAGES

Zhu, Jian-Xin; Janoschek, Marc; Chaves, D. S.; ...

2016-04-05

Motivated by the search for design principles of rare-earth-free strong magnets, we present a study of electronic structure and magnetic properties of the ferromagnetic metal Fe3GeTe2 within local density approximation (LDA) of the density functional theory, and its combination with dynamical mean-field theory (DMFT). For comparison to these calculations, we have measured magnetic and thermodynamic properties as well as X-ray magnetic circular dichroism and the photoemission spectrum of single crystal Fe3GeTe2. We find that the experimentally determined Sommerfeld coefficient is enhanced by an order of magnitude with respect to the LDA value. This enhancement can be partially explained by LDA+DMFT.more » Additionally, the inclusion of dynamical electronic correlation effects provides the experimentally observed magnetic moments, and the spectral density is in better agreement with photoemission data. Lastly, these results establish the importance of electronic correlations in this ferromagnet.« less

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

NASA Astrophysics Data System (ADS)

Ngabonziza, P.; Wang, Y.; Brinkman, A.

2018-04-01

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

Thermoelectric properties of nanocrystalline Sb2Te3 thin films: experimental evaluation and first-principles calculation, addressing effect of crystal grain size.

PubMed

Morikawa, Satoshi; Inamoto, Takuya; Takashiri, Masayuki

2018-02-16

The effect of crystal grain size on the thermoelectric properties of nanocrystalline antimony telluride (Sb 2 Te 3 ) thin films was investigated by experiments and first-principles studies using a developed relaxation time approximation. The Sb 2 Te 3 thin films were deposited on glass substrates using radio-frequency magnetron sputtering. To change the crystal grain size of the Sb 2 Te 3 thin films, thermal annealing was performed at different temperatures. The crystal grain size, lattice parameter, and crystal orientation of the thin films were estimated using XRD patterns. The carrier concentration and in-plane thermoelectric properties of the thin films were measured at room temperature. A theoretical analysis was performed using a first-principles study based on density functional theory. The electronic band structures of Sb 2 Te 3 were calculated using different lattice parameters, and the thermoelectric properties were predicted based on the semi-classical Boltzmann transport equation in the relaxation time approximation. In particular, we introduced the effect of carrier scattering at the grain boundaries into the relaxation time approximation by estimating the group velocities from the electronic band structures. Finally, the experimentally measured thermoelectric properties were compared with those obtained by calculation. As a result, the calculated thermoelectric properties were found to be in good agreement with the experimental results. Therefore, we can conclude that introducing the effect of carrier scattering at the grain boundaries into the relaxation time approximation contributes to enhance the accuracy of a first-principles calculation relating to nanocrystalline materials.

Thermoelectric properties of nanocrystalline Sb2Te3 thin films: experimental evaluation and first-principles calculation, addressing effect of crystal grain size

NASA Astrophysics Data System (ADS)

Morikawa, Satoshi; Inamoto, Takuya; Takashiri, Masayuki

2018-02-01

The effect of crystal grain size on the thermoelectric properties of nanocrystalline antimony telluride (Sb2Te3) thin films was investigated by experiments and first-principles studies using a developed relaxation time approximation. The Sb2Te3 thin films were deposited on glass substrates using radio-frequency magnetron sputtering. To change the crystal grain size of the Sb2Te3 thin films, thermal annealing was performed at different temperatures. The crystal grain size, lattice parameter, and crystal orientation of the thin films were estimated using XRD patterns. The carrier concentration and in-plane thermoelectric properties of the thin films were measured at room temperature. A theoretical analysis was performed using a first-principles study based on density functional theory. The electronic band structures of Sb2Te3 were calculated using different lattice parameters, and the thermoelectric properties were predicted based on the semi-classical Boltzmann transport equation in the relaxation time approximation. In particular, we introduced the effect of carrier scattering at the grain boundaries into the relaxation time approximation by estimating the group velocities from the electronic band structures. Finally, the experimentally measured thermoelectric properties were compared with those obtained by calculation. As a result, the calculated thermoelectric properties were found to be in good agreement with the experimental results. Therefore, we can conclude that introducing the effect of carrier scattering at the grain boundaries into the relaxation time approximation contributes to enhance the accuracy of a first-principles calculation relating to nanocrystalline materials.

Anion Exchange in II-VI Semiconducting Nanostructures via Atomic Templating.

PubMed

Agarwal, Rahul; Krook, Nadia M; Ren, Ming-Liang; Tan, Liang Z; Liu, Wenjing; Rappe, Andrew M; Agarwal, Ritesh

2018-03-14

Controlled chemical transformation of nanostructures is a promising technique to obtain precisely designed novel materials, which are difficult to synthesize otherwise. We report high-temperature vapor-phase anion-exchange reactions to chemically transform II-VI semiconductor nanostructures (100-300 nm length scale) while retaining the single crystallinity, crystal structure, morphology, and even defect distribution of the parent material via atomic templating. The concept of atomic templating is employed to obtain kinetically controlled, thermodynamically metastable structural phases such as zincblende CdSe and CdS from zincblende CdTe upon complete chemical replacement of Te with Se or S. The underlying transformation mechanisms are explained through first-principles density functional theory calculations. Atomic templating is a unique path to independently tune materials' phase and composition at the nanoscale, allowing the synthesis of novel materials.

Formation of randomly distributed nano-tubes, -rods and -plates of n-type and p-type bismuth telluride via molecular legation

NASA Astrophysics Data System (ADS)

Ram, Jasa; Ghosal, Partha

2015-08-01

Randomly distributed nanotubes, nanorods and nanoplates of Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 ternary compounds have been synthesized via a high yield solvo-thermal process. Prior to solvo-thermal heating at 230 °C for crystallization, we ensured molecular legation in room temperature reaction by complete reduction of precursor materials, dissolved in ethylene glycol and confirmed it by replicating Raman spectra of amorphous and crystalline materials. These nanomaterials have also been characterized using XRD, FE-SEM, EDS and TEM. Possible formation mechanism is also discussed. This single process will enable development of thermoelectric modules and random distribution of diverse morphology will be beneficial in retaining nano-crystallite sizes.

Effect of chemical etching on the surface roughness of CdZnTe and CdMnTe gamma radiation detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hossain,A.; Babalola, S.; Bolotnikov, A.E.

2008-08-11

Generally, mechanical polishing is performed to diminish the cutting damage followed by chemical etching to remove the remaining damage on crystal surfaces. In this paper, we detail the findings from our study of the effects of various chemical treatments on the roughness of crystal surfaces. We prepared several CdZnTe (CZT) and CdMnTe (CMT) crystals by mechanical polishing with 5 {micro}m and/or lower grits of Al{sub 2}O{sub 3} abrasive papers including final polishing with 0.05-{micro}m particle size alumina powder and then etched them for different periods with a 2%, 5% Bromine-Methanol (B-M) solution, and also with an E-solution (HNO{sub 3}:H{sub 2}O:Cr{submore » 2}O{sub 7}). The material removal rate (etching rate) from the crystals was found to be 10 {micro}m, 30 {micro}m, and 15 {micro}m per minute, respectively. The roughness of the resulting surfaces was determined by the Atomic Force Microscopy (AFM) to identify the most efficient surface processing method by combining mechanical and chemical polishing.« less

Structure and Chemistry in Halide Lead-Tellurite Glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCloy, John S.; Riley, Brian J.; Lipton, Andrew S.

2013-02-11

A series of TeO2-PbO glasses were fabricated with increasing fractions of mixed alkali, alkaline earth, and lanthanide chlorides. The glass and crystal structure was studied with Raman spectroscopy, nuclear magnetic resonance (NMR), X-ray diffraction, and electron microscopy. As the chloride fraction increased, the medium-range order in the glass decreased up to a critical point (~14 mass% of mixed chlorides), above which the glasses became phase-separated. Resulting phases are a TeO2/PbO-rich phase and a crystalline phase rich in alkali chlorides. The 125Te NMR indicates, contrary to previous studies, that Te site distribution did not change with increased concentrations of M+, M2+,more » and M3+ cations, but rather is controlled by the Te/Pb molar ratio. The 207Pb NMR shows that two Pb species exist and their relative concentration changes nearly linearly with addition of the mixed chlorides, indicating that the additives to the TeO2-PbO glass are accommodated by changing the Pb species. The 23Na and 35Cl NMR indicate that Na and Cl are distributed in the single-phase glass phase up to the critical point, and at higher concentrations partition to crystalline phases. Transmission electron microscopy shows that the sample at the critical point contains ~10 nm seed nuclei that increase in size and concentration with exposure to the electron beam.« less

Structural Channels and Atomic-Cluster Insertion in CsxBi4Te6 (1 ≤ x ≤ 1.25) As Observed by Aberration-Corrected Scanning Transmission Electron Microscopy.

PubMed

Zhang, Ruixin; Yang, Huaixin; Guo, Cong; Tian, Huanfang; Shi, Honglong; Chen, Genfu; Li, Jianqi

2016-12-19

Microstructural analyses based on aberration-corrected scanning transmission electron microscopy (STEM) observations demonstrate that low-dimensional Cs x Bi 4 Te 6 materials, known to be a novel thermoelectric and superconducting system, contain notable structural channels that go directly along the b axis, which can be partially filled by atom clusters depending on the thermal treatment process. We successfully prepared two series of Cs x Bi 4 Te 6 single-crystalline samples using two different sintering processes. The Cs x Bi 4 Te 6 samples prepared using an air-quenching method show superconductivity at approximately 4 K, while the Cs x Bi 4 Te 6 with the same nominal compositions prepared by slowly cooling are nonsuperconductors. Moreover, atomic structural investigations of typical samples reveal that the structural channels are often empty in superconducting materials; thus, we can represent the superconducting phase as Cs 1-y Bi 4 Te 6 with considering the point defects in the Cs layers. In addition, the channels in the nonsuperconducting crystals are commonly partially occupied by triplet Bi clusters. Moreover, the average structures for these two phases are also different in their monoclinic angles (β), which are estimated to be 102.3° for superconductors and 100.5° for nonsuperconductors.

Radio frequency surface resistance of Tl-Ba-Ca-Cu-O films on metal and single-crystal substrates

NASA Astrophysics Data System (ADS)

Arendt, P. N.; Reeves, G. A.; Elliott, N. E.; Cooke, D. W.; Gray, E. R.; Houlton, R. J.; Brown, D. R.

1990-01-01

Films of Tl-Ba-Ca-Cu were dc magnetron sputtered from a single multielement target. The films were deposited onto substrates of: (1) magnesium oxide, (2) a silver based alloy (Consil 995), (3) a nickel based alloy (Haynes 230), and (4) buffer layers of barium fluoride or copper oxide on Consil. To form superconducting phases, post-deposition anneals were made on these films using an alumina crucible with an over pressure of thallium and flowing oxygen. After annealing, the film phases were determined using x-ray diffraction. The film surface resistances (Rs) were measured at 22 GHz in a TE011 cavity.

Advanced methods for preparation and characterization of infrared detector materials. [mercury cadmium tellurides

NASA Technical Reports Server (NTRS)

Lehoczky, S. L.; Szofran, F. R.; Martin, B. G.

1980-01-01

Mercury cadmium telluride crystals were prepared by the Bridgman method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of the crystal growth kinetics for the Hg(i-x)CdxTe alloys, and measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential thermal analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge carrier concentrations, charge carrier mobilities, Hall coefficient, optical absorptance, and Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

Effect of Te doping on FeSe superconductor synthesized by powder-in-tube

NASA Astrophysics Data System (ADS)

Imaduddin, A.; Nisa, K.; Yudanto, S. D.; Nugraha, H.; Siswayanti, B.

2017-04-01

FeSe is a superconducting material, which has the simplest crystal structure among the Fe-based superconductors. It has no arsenic element, which is very harmful to the human body. In this study, we analyzed the effects of milling time and Te doping on FeSe superconductors. The synthesis of the samples were carried out using powder-in-tube method in a SS304 stainless steel tube. After the pressing process, followed by the sintering process at 500° C for 20 hours, the samples were removed from the tubes. Later, we analyzed its crystal structures, surfaces morphology and the superconductivity properties. Δ-FeSe phase (hexagonal, non-superconductor) and β-FeSe (tetragonal, superconductor) were formed in the samples, including minor phases of Fe and Fe3Se4. Te doping changed the crystal structure from β-FeSe and Δ-FeSe into FeSe0.5Te0.5. In addition, the onset critical temperature (TC, onset) shifted to higher temperature.

Visible light driven multifunctional photocatalysis in TeO2-based semiconductor glass ceramics

NASA Astrophysics Data System (ADS)

Kushwaha, Himmat Singh; Thomas, Paramanandam; Vaish, Rahul

2017-01-01

Photocatalytic xCaCu3Ti4O12-(100-x)TeO2 (x=0.25 mol% to 3 mol%), glass nanocomposites were fabricated and investigated for wastewater treatment, self-cleaning surfaces, and photocatalytic hydrogen evolution. Visible light active crystals of Cu-doped TiO2 and TiTe3O8 were grown by optimized crystallization of as-quenched glasses. The visible light photocatalytic activity of glass samples was investigated for estrogenic pharmaceutical pollutants, and the degradation rate was obtained as 168.56 min-1 m-2. A higher photocatalytic H2 production rate was observed (135 μmole h-1 g-1) for the crystallized CaCu3Ti4O12-TeO2 (x=3. 0) glass plate under visible light. The self-cleaning performance was observed using contact angle measurements for water under dark and light conditions. These visible light active glass ceramics are a cost effective sustainable solution for water treatment and self-cleaning applications.

Radiation hardness studies of CdTe thin films for clinical high-energy photon beam detectors

NASA Astrophysics Data System (ADS)

Shvydka, Diana; Parsai, E. I.; Kang, J.

2008-02-01

In radiation oncology applications, the need for higher-quality images has been driven by recent advances in radiation delivery systems that require online imaging. The existing electronic imaging devices commonly used to acquire portal images implement amorphous silicon (a-Si) detector, which exhibits poor image quality. Efforts for improvement have mostly been in the areas of noise and scatter reduction through software. This has not been successful due to inherent shortcomings of a-Si material. Cadmium telluride (CdTe) semiconductor has long been recognized as highly suitable for use in X-ray detectors in both spectroscopic and imaging applications. Development of such systems has mostly concentrated on single crystal CdTe. Recent advances in thin-film deposition technology suggest replacement of crystalline material with its polycrystalline counterpart, offering ease of large-area device fabrication and achievement of higher resolution as well as a favorable cost difference. While bulk CdTe material was found to have superior radiation hardness, thin films have not been evaluated from that prospective, in particular under high-energy photon beam typical of radiation treatment applications. We assess the performance of thin-film CdTe devices utilizing 6 MeV photon beam and find no consistent trend for material degradation under doses far exceeding the typical radiation therapy detector lifetime dose.

TePtFe Nanotubes as High-Performing Bifunctional Electrocatalysts for the Oxygen Reduction Reaction and Hydrogen Evolution Reaction.

PubMed

Li, Wenqiang; Amiinu, Ibrahim Saana; Ye, Bei; Wang, Zhe; Zhu, Jiawei; Kou, Zongkui; Mu, Shichun

2018-04-25

Currently, a multicomponent platinum-based alloy has been applied as a promising electrocatalyst to improve catalysis and lower the usage of the noble metal platinum. Herein, a tellurium nanowire (NW)-derived ternary TePtFe nanotube (NT) electrocatalyst has been prepared by the Kirkendall effect. The TePtFe NT formed consists of small single-crystal nanoparticles and voids with an open-end and hollow structure. The TePtFe NT electrocatalyst presents an impressive catalytic activity and stability for both the oxygen reduction reaction (ORR) and hydrogen evolution reaction (HER). Its ORR specific activity and mass activity are 8.5 and 2.4 times, respectively, improved relative to those of commercial platinum catalysts. It is also impressive that, for the HER, a very low overpotential of 28.1 mV at 10 mA cm -2 can be achieved; this is lower than that of platinum (51.8 mV) catalysts in 0.1 m HClO 4 , and the activity is improved, even after 5000 cycles. This work reveals that TePtFe NTs can be employed as nanocatalysts with an impressive catalytic activity and stability for application in fuel cells and hydrogen production. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

X-ray powder diffraction, spectroscopic study, dielectric properties and thermal analysis of new doped compound TiGa0.67Te2.33O8

NASA Astrophysics Data System (ADS)

Smaoui, S.; Ben Aribia, W.; Kabadou, A.; Abdelmouleh, M.

2017-04-01

A novel mixed valence tellurium oxide, TiGa0.67Te2.33O8, was synthesized and its crystal structure determined using the X-ray powder diffraction technique. The obtained oxide was found to crystallize in a cubic unit-cell, Ia 3 bar space group, with the lattice parameter a = 10.9557(1) Å. Rietveld refinement of the structure led to ultimate confidence factors Rp = 7.63 and Rwp = 6.71. This structure was based on slabs containing groups of (Te/Ga)O4 joined by the metal cations Ti4+. The structure analysis showed a cation ordering of Te4+ and Te6+ yielding a TiGa2/3Te7/3O8 formula. The IR and RAMAN spectra confirmed the presence of the TiO6 and (Te/Ga)O4 groups. The dielectric anomalies observed at 500 K were attributed to the mixed valence structure, arising from the mixed-valence Te6+/Te4+. We detected only one peak in thermal behavior by the DTA/TG analysis; which implied a melting reaction.

Few-layer nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with highly tunable chemical potential.

PubMed

Kong, Desheng; Dang, Wenhui; Cha, Judy J; Li, Hui; Meister, Stefan; Peng, Hailin; Liu, Zhongfan; Cui, Yi

2010-06-09

A topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi(2)Se(3), Bi(2)Te(3), and Sb(2)Te(3) are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi(2)Te(3) and Bi(2)Se(3) nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO(2)/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential.

Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film.

PubMed

Kim, Eun Sung; Hwang, Jae-Yeol; Lee, Kyu Hyoung; Ohta, Hiromichi; Lee, Young Hee; Kim, Sung Wng

2017-02-01

Graphene as a substrate for the van der Waals epitaxy of 2D layered materials is utilized for the epitaxial growth of a layer-structured thermoelectric film. Van der Waals epitaxial Bi 0.5 Sb 1.5 Te 3 film on graphene synthesized via a simple and scalable fabrication method exhibits good crystallinity and high thermoelectric transport properties comparable to single crystals. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Laser ultrasonic investigations of vertical Bridgman crystal growth

NASA Astrophysics Data System (ADS)

Queheillalt, Douglas Ted

The many difficulties associated with the growth of premium quality CdTe and (Cd,Zn)Te alloys has stimulated an interest in the development of a non-invasive ultrasonic approach to monitor critical growth parameters such as the solid-liquid interface position and shape during vertical Bridgman growth. This sensor methodology is based upon the recognition that in most materials, the ultrasonic velocity (and the elastic stiffness constants that control it) of the solid and liquid phases are temperature dependent and an abrupt increase of the longitudinal wave velocity occurs upon solidification. The laser ultrasonic approach has also been used to measure the ultrasonic velocity of solid and liquid Cd0.96Zn0.04Te as a function of temperature up to 1140°C. Using longitudinal and shear wave velocity values together with data for the temperature dependent density allowed a complete evaluation of the temperature dependent single crystal elastic stiffness constants for solid and the adiabatic bulk modulus for liquid Cd0.96Zn0.04 Te. It was found that the ultrasonic velocities exhibited a strong monotonically decreasing function of temperature in the solid and liquid phases and the longitudinal wave indicated an abrupt almost 50% decrease upon melting. Because ray propagation in partially solidified bodies is complex and defines the sensing methodology, a ray tracing algorithm has been developed to analyze two-dimensional wave propagation in the diametral plane of cylindrical solid-liquid interfaces. Ray path, wavefront and time-of-flight (TOF) projections for rays that travel from a source to an arbitrarily positioned receiver on the diametral plane have been calculated and compared to experimentally measured data on a model liquid-solid interface. The simulations and the experimental results reveal that the interfacial region can be identified from transmission TOF data and when used in conjunction with a nonlinear least squares reconstruction algorithm, the interface geometry (i.e. axial location and shape) can be precisely recovered and the ultrasonic velocities of both solid and liquid phases obtained. To gain insight into the melting and solidification process, a single zone VB growth furnace was integrated with the laser ultrasonic sensor system and used to monitor the melting-solidification and directional solidification characteristics of Cd0.96Zn 0.04Te.

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi.

PubMed

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-03-23

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge 20 Te 77 Se₃ glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge 20 Te 77 Se₃) 100- x M x (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge 20 Te 77 Se₃) 100- x Bi x ( x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm -1 K -1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses.

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi

PubMed Central

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-01-01

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge20Te77Se3 glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge20Te77Se3)100−xMx (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge20Te77Se3)100−xBix (x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm−1 K−1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses. PMID:28772687

Measuring Refractive Index Using the Focal Displacement Method (Postprint)

DTIC Science & Technology

2014-05-01

refractive in- dex data at wavelengths longer than 1.8 μm [19] (2.5 μm [20]). The CdMgTe and CdMnTe crystals were obtained from Brimrose Technology...increase its accuracy. The authors gratefully acknowledge Dr. Sudhir Trivedi ( Brimrose Corp.) for providing the CdMgTe and CdMnTe samples, Dr. Jonathan

Influence of Surrounding Dielectrics on the Data Retention Time of Doped Sb2Te Phase Change Material

NASA Astrophysics Data System (ADS)

Jedema, Friso; in `t Zandt, Micha; Wolters, Rob; Gravesteijn, Dirk

2011-02-01

The crystallization properties of as-deposited and laser written amorphous marks of doped Sb2Te phase change material are found to be only dependent on the top dielectric layer. A ZnS:SiO2 top dielectric layer yields a higher crystallization temperature and a larger crystal growth activation energy as compared to a SiO2 top dielectric layer, leading to superior data retention times at ambient temperatures. The observed correlation between the larger crystallization temperatures and larger crystal growth activation energies indicates that the viscosity of the phase change material in the amorphous state is dependent on the interfacial energy between the phase change material and the top dielectric layer.

Method for surface passivation and protection of cadmium zinc telluride crystals

DOEpatents

Mescher, Mark J.; James, Ralph B.; Schlesinger, Tuviah E.; Hermon, Haim

2000-01-01

A method for reducing the leakage current in CZT crystals, particularly Cd.sub.1-x Zn.sub.x Te crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd.sub.0.9 Zn.sub.0.1 Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state.

Investigation of angular dependence on photonic bandgap for 1-D photonic crystal

NASA Astrophysics Data System (ADS)

Nigam, Anjali; Suthar, B.; Bhargava, A.; Vijay, Y. K.

2018-05-01

In the present communication, we study the one-dimensional photonic crystal structure. The photonic band structure has been obtained using Plane Wave Expansion Method (PWEM). The studied has been extended to investigate the angular dependence on photonic bandgap for 1-D photonic crystal. The photonic bandgap is same both for TE and TM mode for normal incidence, while both mode move separate with an incidence angle. The photonic bandgap is almost unaffected with angle for TE mode while the bandgap decreases with an incidence angle for TM mode.

Binary photonic crystal for refractometric applications (TE case)

NASA Astrophysics Data System (ADS)

Taya, Sofyan A.; Shaheen, Somaia A.

2018-04-01

In this work, a binary photonic crystal is proposed as a refractometric sensor. The dispersion relation and the sensitivity are derived for transverse electric (TE) mode. In our analysis, the first layer is considered to be the analyte layer and the second layer is assumed to be left-handed material (LHM), dielectric or metal. It is found that the sensitivity of the LHM structure is the highest among other structures. It is possible for LHM photonic crystal to achieve a sensitivity improvement of 412% compared to conventional slab waveguide sensor.

Semiconductor electrolyte photovoltaic energy converter

NASA Technical Reports Server (NTRS)

Anderson, W. W.; Anderson, L. B.

1975-01-01

Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

Investigation of Artificial Forced Cooling in the Bridgman Crystal Growth of Cadmium Zinc Telluride

NASA Astrophysics Data System (ADS)

Liu, Juncheng; Li, Jiao; Zhang, Guodong; Li, Changxing; Lennon, Craig; Sivananthan, Siva

2007-08-01

The effects of artificial forced cooling on the solid liquid interface and on solute segregation were investigated by modeling the vertical Bridgman method for the single-crystal growth of CdZnTe, taking into consideration effects such as increasing the axial outward heat flux from the crucible bottom, the radial outward heat flux from the crucible wall, and the carbon film thickness on the crucible inner wall. Axial artificially forced cooling noticeably increases convection and the temperature gradient in the melt next to the solid liquid interface, and substantially reduces interface concavity at the initial solidification stage. Interface concavity increases a little when the solidification proceeds further, however. Axial artificially forced cooling reduces radial solute segregation of the initial segment of the grown crystal and slightly increases the solute iso-concentration segment. Radial artificially forced cooling enhances melt convection substantially, affects solid liquid interface concavity only slightly, and hardly affects solute segregation in the grown crystal. Doubling the carbon film thickness weakens convection of the melt in front of the interface, substantially increases interface concavity, and hardly affects solute segregation in the grown crystal.

Optical Characterization of Lead Monoxide Films Grown by Laser-Assisted Deposition

NASA Astrophysics Data System (ADS)

Baleva, M.; Tuncheva, V.

1994-05-01

The Raman spectra of PbO films, grown by laser-assisted deposition (LAD) at different substrate temperatures are investigated. The spectra of the films, deposited on amorphous, single crystal quartz and polycrystal PbTe substrates, are compared with the Raman spectra of tetragonal and orthorhombic powder samples. The phonon frequencies determined in our experiment with powder samples coincide fairly well with those obtained by Adams and Stevens, J. Chem. Soc., Dalton Trans., 1096 (1977). Thus the Raman spectra of the powder samples presented in this paper can be considered as unambiguous characteristics of the two different PbO crystal phases. It was concluded that the Raman scattering may serve as a tool for identification of PbO films and their crystal modifications. On the basis of this investigation it was concluded that the film structure changes from orthorhombic to tetragonal with increased substrate temperature, and that the nature of the substrate influences the crystal structure of the films. On the basis of the Raman spectra of the β-PbO films with prevailing (001) orientation of crystallization, an assignment of the modes is proposed.

Elastic, vibration and thermodynamic properties of Cu1‑x Ag x InTe2 (x = 0, 0.25, 0.5, 0.75 and 1) chalcopyrite compounds via first principles

NASA Astrophysics Data System (ADS)

Zhong, Yuhan; Wang, Peida; Mei, Huayue; Jia, Zhenyuan; Cheng, Nanpu

2018-06-01

CuInTe2 chalcopyrite compound is widely used in the fields of optoelectronics and pyroelectricity, and doping atoms can further improve the physical properties of the CuInTe2 compound. For all we know, this is the first time that the elastic behaviors and lattice dynamical properties of Ag-doped CuInTe2 compounds with the tetragonal system are determined theoretically. The elastic, lattice dynamical and thermal properties of Cu1‑x Ag x InTe2 (x = 0, 0.25, 0.5, 0.75 and 1) compounds have been investigated by using density functional theory. The obtained elastic constants of Cu1‑x Ag x InTe2 compounds indicate that these compounds are mechanically stable and elastic anisotropic. The anisotropy of the {001} plane is more obvious than those of the {100} and {010} planes. Additionally, with increasing Ag doping concentrations, the bulk and shear moduli of Cu1‑x Ag x InTe2 compounds decrease and their toughness improves. The phonon spectra and density of states reveal that Cu (or Ag) atoms in Cu1‑x Ag x InTe2 compounds form chemical bonds with Te atoms, and Cu-Te bonds are gradually replaced by Ag-Te bonds with increasing Ag doping concentration. Vibration modes of Cu1‑x Ag x InTe2 compounds at the {{Γ }} point in the Brillouin zone show that each Cu1‑x Ag x InTe2 (x = 0 and 1) crystal includes five irreducible representations (A1, A2, B1, B2 and E). As for Cu1‑x Ag x InTe2 (x = 0.25, 0.5 and 0.75) compounds, each crystal has three irreducible representations (A, B and E). The atomic displacements of several typical phonon modes in CuInTe2 crystals have been analyzed to deepen the understanding of lattice vibrations in Cu1‑x AgxInTe2 compounds. With increasing Ag doping concentration, the Debye temperatures of Cu1‑x Ag x InTe2 compounds decrease, while their heat capacities increase.

In-situ characterization of the optical and electronic properties in GeTe and GaSb thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velea, A.; Popescu, M.; Galca, A. C., E-mail: ac-galca@infim.ro

2015-10-07

GeTe and GaSb thin films obtained by pulsed laser deposition were investigated by spectroscopic ellipsometry at controlled temperatures. The GeTe films were fully amorphous, while the GaSb films were partially crystalized in the as-deposited state. The Tauc-Lorentz model was employed to fit the experimental data. From the temperature study of the optical constants, it was observed the crystallization in the 150–160 °C range of GeTe amorphous films and between 230 and 240 °C of GaSb amorphous phase. A second transition in the resonance energy and the broadening parameter of the Lorentz oscillator was observed due to the crystallization of Sb after 250 °C.more » The temperatures of 85 °C and 130 °C are noticed as the start of the relaxation of the amorphous GeTe phase and as-deposited GaSb. The peaks of the imaginary part of the dielectric function red shifted after the phase change, while the variation with temperature of the crystalline phase follows the Varshni law. The electron-phonon coupling constants are 2.88 and 1.64 for c-GeTe and c-GaSb, respectively. An optical contrast up to 60% was obtained for GeTe films and a maximum value of 7.5% is revealed in the case GaSb, which is altered by the partial crystallinity of the as-deposited films.« less

Effect of cadmium telluride quantum dots on the dielectric and electro-optical properties of ferroelectric liquid crystals.

PubMed

Kumar, A; Biradar, A M

2011-04-01

We present here the dielectric and electro-optical studies of cadmium telluride quantum dots (CdTe QDs) doped ferroelectric liquid crystals (FLCs). It has been observed that the doping of CdTe QDs not only induced a pronounced memory effect but also affected the physical parameters of FLC material (LAHS19). The modifications in the physical parameters and memory effect of LAHS19 are found to depend on the concentration ratio of CdTe QDs. The lower concentration of CdTe QDs (1-3 wt%) enhanced the values of spontaneous polarization and rotational viscosity of LAHS19 material but did not favor the memory effect, whereas a higher concentration of CdTe QDs (>5 wt%) degraded the alignment of LAHS19 material. The doping of ∼5 wt% of CdTe QDs is found to be the most suitable for achieving good memory effect without significantly affecting the material parameters. ©2011 American Physical Society

MoSbTe for high-speed and high-thermal-stability phase-change memory applications

NASA Astrophysics Data System (ADS)

Liu, Wanliang; Wu, Liangcai; Li, Tao; Song, Zhitang; Shi, Jianjun; Zhang, Jing; Feng, Songlin

2018-04-01

Mo-doped Sb1.8Te materials and electrical devices were investigated for high-thermal-stability and high-speed phase-change memory applications. The crystallization temperature (t c = 185 °C) and 10-year data retention (t 10-year = 112 °C) were greatly enhanced compared with those of Ge2Sb2Te5 (t c = 150 °C, t 10-year = 85 °C) and pure Sb1.8Te (t c = 166 °C, t 10-year = 74 °C). X-ray diffraction and transmission electron microscopy results show that the Mo dopant suppresses crystallization, reducing the crystalline grain size. Mo2.0(Sb1.8Te)98.0-based devices were fabricated to evaluate the reversible phase transition properties. SET/RESET with a large operation window can be realized using a 10 ns pulse, which is considerably better than that required for Ge2Sb2Te5 (∼50 ns). Furthermore, ∼1 × 106 switching cycles were achieved.

Fabrication of Te@Au core-shell hybrids for efficient ethanol oxidation

NASA Astrophysics Data System (ADS)

Jin, Huile; Wang, Demeng; Zhao, Yuewu; Zhou, Huan; Wang, Shun; Wang, Jichang

2012-10-01

Using Au nanoparticles to catalyze the oxidation of alcohols has garnered increasing attention due to its potential application in direct alcohol fuel cells. In this research Te@Au core-shell hybrids were fabricated for the catalytic oxidation of ethanol, where the preparation procedure involved the initial production of Te crystals with different microstructures and the subsequent utilization of the Te crystal as a template and reducing agent for the production of Te@Au hybrids. The as-prepared core-shell hybrids were characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction techniques. Electrochemical measurements illustrate that the hybrids have great electrocatalytic activity and stability toward ethanol oxidation in alkaline media. The enhanced electrocatalytic property may be attributed to the cooperative effects between the metal and semiconductor and the presence of a large number of active sites on the hybrids surface.

Pressure induced Ag 2Te polymorphs in conjunction with topological non trivial to metal transition

DOE PAGES

Zhu, J.; Oganov, A. R.; Feng, W. X.; ...

2016-08-01

Silver telluride (Ag 2Te) is well known as superionic conductor and topologica insulator with polymorphs. Pressure induced three phase transitions in Ag 2Te hav been reported in previous. Here, we experimentally identified high pressure phas above 13 GPa of Ag 2Te by using high pressure synchrotron x ray diffraction metho in combination with evolutionary crystal structure prediction, showing it crystallize into a monoclinic structure of space group C2/m with lattice parameters a = 6.081Å b = 5.744Å, c = 6.797 Å, β = 105.53°. The electronic properties measurements of Ag 2Te reveal that the topologically non-trivial semiconducting phase I andmore » semimetalli phase II previously predicated by theory transformed into bulk metals fo high pressure phases in consistent with the first principles calculations« less

Nanocrystal growth and morphology of PbTeSe-ZnSe composite thin films prepared by one-step synthesis method

NASA Astrophysics Data System (ADS)

Sato, Kazuhisa; Abe, Seishi

2016-10-01

The microstructure of polycrystalline PbTe1-xSex-ZnSe composite thin films has been studied by scanning transmission electron microscopy and electron diffraction. The films were prepared by the one-step synthesis method using simultaneous evaporation of PbTe and ZnSe. The nanocrystals of PbTe1-xSex are formed in a ZnSe matrix. Tellurium concentration can be tuned by controlling the PbTe evaporation source temperatures between 753 K and 793 K. Binary PbSe nanocrystals were formed at 753 K, while ternary PbTe1-xSex nanocrystals were formed at 793 K. The nanocrystals grow in a granular shape at the initial stage of film growth, and the morphology changes to nanowire-shape as the film grows, irrespective of the Te concentration. The ternary PbTe1-xSex nanocrystals were composed of two phases with different Te concentration; Te-rich (Se-poor) granular crystals were formed near the bottom half parts of the film and Te-poor (Se-rich) nanowires were formed at the upper half parts of the film. Columnar ZnSe crystals contain high-density {111} stacking faults due to the low stacking fault energy of ZnSe. A balance of deposition and re-evaporation on the substrate during the film growth will be responsible for the resultant nanocrystal morphology.

Characterization of p-Type CdTe Electrodes in Acetonitrile/Electrolyte Solutions. Nearly Ideal Behavior from Reductive Surface Pretreatments.

DTIC Science & Technology

1983-06-30

using Ag conductive palnt and the entire assembly was mounted in glass tubing with ordinary epoxy leaving only the front crystal face, ...energy set, several eV higher than either Te2- or Teo (as measured for sputtered CdTe and Te, respectively) is assigned to TeO2 , the lowest stable...binding energy reported for TeO2 (575.9 eV). 33 The lower binding energy set of bands, lying midway between Teo and Te2 - , results from both Teo and

Design of highly sensitive multichannel bimetallic photonic crystal fiber biosensor

NASA Astrophysics Data System (ADS)

Hameed, Mohamed Farhat O.; Alrayk, Yassmin K. A.; Shaalan, Abdelhamid A.; El Deeb, Walid S.; Obayya, Salah S. A.

2016-10-01

A design of a highly sensitive multichannel biosensor based on photonic crystal fiber is proposed and analyzed. The suggested design has a silver layer as a plasmonic material coated by a gold layer to protect silver oxidation. The reported sensor is based on detection using the quasi transverse electric (TE) and quasi transverse magnetic (TM) modes, which offers the possibility of multichannel/multianalyte sensing. The numerical results are obtained using a finite element method with perfect matched layer boundary conditions. The sensor geometrical parameters are optimized to achieve high sensitivity for the two polarized modes. High-refractive index sensitivity of about 4750 nm/RIU (refractive index unit) and 4300 nm/RIU with corresponding resolutions of 2.1×10-5 RIU, and 2.33×10-5 RIU can be obtained according to the quasi TM and quasi TE modes of the proposed sensor, respectively. Further, the reported design can be used as a self-calibration biosensor within an unknown analyte refractive index ranging from 1.33 to 1.35 with high linearity and high accuracy. Moreover, the suggested biosensor has advantages in terms of compactness and better integration of microfluidics setup, waveguide, and metallic layers into a single structure.

Synthesis and Characterization of Potassium Aryl- and Alkyl-Substituted Silylchalcogenolate Salts

DOE PAGES

Brown, Jessica Lynn; Montgomery, Ashley C.; Samaan, Christopher A.; ...

2016-02-23

Treatment of either triphenyl(chloro)silane or tert-butyldiphenyl(chloro)silane with potassium metal in THF, followed by addition of 18-crown-6, affords [K(18-crown-6)][SiPh 3] (1) and [K(18-crown-6)][SiPh 2 tBu] (2), respectively, as the reaction products in high yield. Compounds 1 and 2 were fully characterized including by multi-nuclear NMR and IR spectroscopies. Addition of elemental chalcogen to either 1 or 2, results in facile chalcogen insertion into the potassium-silicon bond to afford the silylchalcogenolates, [K(18-crown-6)][E– SiPh2R] (E = S, R = Ph (3); Se, R = Ph (4); E = Te, R = Ph (5); E = S, R = tBu (6); E = Se,more » R = tBu (7); E = Te, R = tBu (8)), in moderate to good yield. The silylchalcogenolates reported herein were characterized by multi-nuclear NMR and IR spectroscopies, and their solid-state molecular structures were determined by single-crystal X-ray crystallography. Importantly, the reported compounds crystallize as discrete monomers in the solid-state, a structural feature not previously observed in silylchalcogenolates, providing well-defined access routes into systematic metal complexation studies.« less

Numerical methods for industrial vertical Bridgman growth of (Cd,Zn)Te

NASA Astrophysics Data System (ADS)

Lin, K.; Boschert, S.; Dold, P.; Benz, K. W.; Kriessl, O.; Schmidt, A.; Siebert, K. G.; Dziuk, G.

2002-04-01

This paper presents efficient numerical methods—the "inverse modeling" method and the adaptive finite element method—for optimizing the heat transport as well as for investigating the heat and mass transport under the influence of convection during crystal growth, especially near the liquid/solid interface. These methods have been applied to industrial Bridgman-furnaces for the growth of 65-75 mm diameter (Cd,Zn)Te crystals.

Natural nanostructure and superlattice nanodomains in AgSbTe{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carlton, Christopher E.; De Armas, Ricardo; Shao-Horn, Yang, E-mail: delaireoa@ornl.gov, E-mail: shaohorn@mit.edu

2014-04-14

AgSbTe{sub 2} has long been of interest for thermoelectric applications because of its favorable electronic properties and its low lattice thermal conductivity of ∼0.7 W/mK. In this work, we report new findings from a high-resolution transmission electron microscopy study revealing two nanostructures in single crystal Ag{sub 1−x}Sb{sub 1+x}Sb{sub 2+x} (with x = 0, 0.1, 0.2); (i) a rippled natural nanostructure with a period of ∼2.5–5 nm and (ii) superlattice ordered nanodomains consistent with cation ordering predicted in previous density functional theory studies. These nanostructures, combined with point-defects, probably serve as sources of scattering for phonons, thereby yielding a low lattice thermal conductivity over amore » wide temperature range.« less

Small influence of magnetic ordering on lattice dynamics in TaFe 1.25 Te 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Opačić, M.; Lazarević, N.; Tanasković, D.

2017-11-16

Raman scattering spectra of zigzag spin chain TaFe 1.25Te 3 single crystal are presented in a temperature range from 80 to 300 K. Nine Raman active modes of A g and B g symmetry are clearly observed and assigned by probing different scattering channels, which is confirmed by lattice dynamics calculations. Temperature dependence of the Raman modes linewidth is mainly governed by the lattice anharmonicity. The only deviation from the conventional behavior is observed for A g symmetry modes in a vicinity of the magnetic phase transition at T N ≈ 200 K. This implies that the electron-phonon interaction weaklymore » changes with temperature and magnetic ordering, whereas small changes in the spectra near the critical temperature can be ascribed to spin fluctuations.« less

Tellurium(0) as a ligand: synthesis and characterization of 2-pyridyltellurolates of platinum(II) and structures of [Pt{2-Te-3-(R)C5H3N}2Te(PR'3)] (R = H or Me).

PubMed

Chauhan, Rohit Singh; Kedarnath, G; Wadawale, Amey; Muñoz-Castro, Alvaro; Arratia-Perez, Ramiro; Jain, Vimal K; Kaim, Wolfgang

2010-05-03

Treatment of toluene solutions of the ditellurides [Te(2){C(5)H(3)N(R)-3}(2)] (R = H or Me) with [Pt(PPh(3))(4)] yielded two types of complexes, [Pt{2-Te-3-(R)C(5)H(3)N}(2)(PPh(3))(2)] (1a-d) as the major products and [Pt{2-Te-3-(R)C(5)H(3)N}(2)Te(PPh(3))] (2a-d) as minor products. The above complexes can also be obtained by the reaction of [PtCl(2)(PR'(3))(2)] (PR'(3) = PPh(3) or PPh(2)(2-C(5)H(4)N)) with 2 equiv of Na(2-Te-C(5)H(3)R). The complexes were characterized by elemental analyses and UV-vis, NMR ((1)H and (31)P), and (in part) XPS spectroscopy. The molecular structures of [Pt(2-Te-C(5)H(4)N)(2)Te(PPh(3))] (2a) and [Pt{2-Te-C(5)H(3)(Me)N}(2)Te(PPh(3))] (2b) were established by single crystal X-ray diffraction. Both complexes exhibit a distorted square-planar configuration at the platinum(II) centers. The two mutually trans positioned 2-pyridinetellurolate ligands [2-Te-C(5)H(3)(R)N] coordinate to the central platinum atom in a monodentate fashion through the tellurium atoms. The tellurium(0) atom adopts a "bent T" configuration as it is bridging the 2-Te- C(5)H(3)(R)N molecules via N-Te-N bonds (166 degrees angle) and coordinates to Pt(II) in the trans position to PPh(3). The novel bis(pyridine)tellurium(0) arrangement resembles the bis(pyridine)iodonium structure. The calculated NICS indices and ELF functions clearly show that the compounds 2a and 2b are aromatic in the region defined by the Te-C-N-Te-Pt five-membered rings.

Precipitation of anion inclusions and plasticity under hydrostatic pressure in II-VI crystals

NASA Astrophysics Data System (ADS)

Lindberg, G. P.; Weinstein, B. A.

2016-10-01

Precipitation of anion nanocrystals (NCs) in initially stoichiometric II-VI crystals under hydrostatic pressure and light exposure is explored by Raman spectroscopy, and the mechanism for this effect is analyzed by model calculations. ZnSe, ZnTe, and CdSe crystals are studied in bulk and/or epitaxial-film forms. Se and Te NCs in the trigonal (t) phase precipitate in ZnSe and ZnTe, but the effect is absent or minimal in CdSe. The precipitation is induced by pressure and assisted by sub-band-gap light. In ZnSe, t-Se NCs appear for pressure exceeding 4.8 GPa and light flux above 50 -70 W /m m2 . In ZnTe, the precipitation of t-Te NCs requires less pressure to initiate, and there is a clear upper-pressure limit for t-Te nuclei to form. We find also that ZnTe samples with cleavage damage or elevated zinc-vacancy content are more prone to form t-Te NCs at lower pressures (even 1 atm in some cases) and lower flux. The precipitation seen in ZnSe and ZnTe occurs at pressures far below their phase transitions, and cannot be due to those transitions. Rather, we propose that the NCs nucleate on dislocations that arise from hydrostatic-pressure induced plastic flow triggered by noncubic defect sites. Calculations of the kinetic barrier for growth of an optimally shaped nucleus are performed, including hydrostatic pressure in the energy minimization scheme. Using sensible values for the model parameters related to the cohesive energies of Se and Te, the calculations account for our main observations, including the existence of an upper pressure limit for precipitation, and the absence of precipitation in CdSe. We consider the effects of pressure-induced precipitate formation on the I-II phase transitions in a variety of binary semiconductors and make predictions of when this effect should be important.

Advanced methods for preparation and characterization of infrared detector materials

NASA Technical Reports Server (NTRS)

Broerman, J. G.; Morris, B. J.; Meschter, P. J.

1983-01-01

Crystals were prepared by the Bridgman-Stockbarger method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady-state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of solute redistribution during the crystal growth of the alloys. Measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential-thermal-analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Experiments were conducted to determine the ternary phase equilibria in selected regions of the Hg-Cd-Te constitutional phase diagram. Electron and hole mobilities as functions of temperature were analyzed to establish charge-carrier scattering probabilities. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge-carrier concentration, charge-carrier mobilities, Hall coefficient, and Dermi Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

In-Situ Optical Determination of Thermomechanical Properties of ZnSe and ZnTe Crystals

NASA Technical Reports Server (NTRS)

Burger, A.; Ndap, J.-O.; Chattopadhyay, K.; Ma, X.; Silberman, E.; Feth, S.; Palosz, W.; Su, C.-H.

1999-01-01

At temperatures above 1/2 T(sub m), the generation and movement of dislocations may result due to the load created by the weight of the crystal itself The deformation may be expected to increase the line defect density and may result in generation of low angle grain boundaries, especially in the regions of the crystal attached to the ampule. It has often been suspected that elimination of this effect in space can improve crystallinity of crystals grown under microgravity conditions, however, a direct experimental proof of such relation is still missing. In this work we have designed and built a system of in-situ optical detection and measurement of the mechanical deformations of a crystal wafer under its own weight, and studied the deformation effects as a function of temperature. The results of the measurements for ZnSe and ZnTe crystal wafers will be presented.

Phase transition and equation of state of paratellurite (TeO2) under high pressure

NASA Astrophysics Data System (ADS)

Liu, Xun; Mashimo, Tsutomu; Kawai, Nobuaki; Sekine, Toshimori; Zeng, Zhaoyi; Zhou, Xianming

2016-07-01

The Hugoniot data for TeO2 single crystals were obtained for pressures up to ˜85 GPa along both the <100> (a-axis) and <001> (c-axis) directions using a velocity interferometer system for any reflector and inclined-mirror method combined with a powder gun or two-stage light gas gun. The Hugoniot-elastic limit of TeO2 was determined to be 3.3-4.3 GPa along the c-axes. The shock velocity (U s) versus particle velocity (U p) relation for TeO2 shows a kink around U p = 1.0 km s-1, which suggests a phase transition completes at ˜26 ± 2 GPa. The Hugoniot relations of the low and high pressure phase are given by U s = 3.13(5) + 1.10(6)U p for U p < 1.0 km s-1 and U s = 2.73(9) + 1.49(5)U p for U p > 1.0 km s-1, respectively. First-principles geometry optimizations based on the generalized gradient approximation after Perdew, Burke and Ernzerhof method were also performed on TeO2. It suggested that a continuous structure distortion occurs up to 22 GPa, and the lattice parameters b and c abruptly increase and decrease at 22 GPa, respectively, indicating a first-order phase transition to the cotunnite structure phase. The equation of state of the cotunnite phase TeO2 is discussed based on the experimental and simulation results.

Stimulation of respiratory changes in alae nasi length by chemoreceptor activation.

PubMed

Van Lunteren, E; Haxhiu, M A; Cherniack, N S

1986-03-01

Respiratory-related changes in length of the nasal dilator muscle, the alae nasi muscle, were measured using sonomicrometry in ten anesthetized (pentobarbital), tracheostomized, spontaneously breathing dogs. Piezoelectric crystals were inserted 7-25 mm apart along the direction of the alae nasi muscle fibers, and the effects of progressive hyperoxic hypercapnia and a peripheral and central chemoreceptor stimulant, nicotine (10-500 micrograms intravenously), were ascertained. The alae nasi shortened during inspiration in all animals, started to lengthen again towards the end of inspiration, returned to resting length during the first portion of expiration (Te-1), and remained at resting length for the remainder of expiration (Te-2). The amount of alae nasi inspiratory shortening was increased by occluding the airway for a single breath. Progressive hypercapnia caused progressive increases in the amount and velocity of nasal muscle inspiratory shortening during both unoccluded and occluded breaths; similar stimulatory effects on inspiratory shortening were seen following nicotine administration. Furthermore, both chemoreceptor stimulants caused a delay in the return of the muscle to its resting length during expiration, resulting in a significant increase in Te-1 relative to Te (Te-1/Te), and a greater amount of nasal muscle shortening to be present during Te-1. In some animals these agents also caused tonic shortening of the alae nasi, so that the muscle never returned to its resting length. These results suggest that inspiratory shortening of the alae nasi is inhibited by vagal inputs, but that chemoreceptor activation increases the amount of muscle shortening during both inspiration and early expiration.

Correlating optical infrared and electronic properties of low tellurium doped GaSb bulk crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roodenko, K., E-mail: kroodenko@intelliepi.com; Liao, P.-K.; Lan, D.

2016-04-07

Control over the Te doping concentration is especially challenging in the mass-production of optically transparent, high-resistivity Te-doped GaSb crystals. Driven by the necessity to perform fast, robust, and non-destructive quality control of the Te doping homogeneity of the optically transparent large-diameter GaSb wafers, we correlated electronic and optical infrared properties of Te-doped GaSb crystals. The study was based on the experimental Hall and Fourier-Transform Infrared (FTIR) data collected from over 50 samples of the low-doped n-type material (carrier concentration of 6 × 10{sup 16} cm{sup −3} to 7 × 10{sup 17} cm{sup −3}) and the Te-doped p-type GaSb (4.6 ×more » 10{sup 15} cm{sup −3} to 1 × 10{sup 16} cm{sup −3}). For the n-type GaSb, the analysis of the FTIR data was performed using free carrier absorption model, while for the p-type material, the absorption was modeled using inter-valence band absorption mechanism. Using the correlation between the Hall and the IR data, FTIR maps across the wafers allow a fast and reliable way to estimate carrier concentration profile within the wafer.« less

The transport phenomena during the growth of ZnTe crystal by the temperature gradient solution growth technique

NASA Astrophysics Data System (ADS)

Yin, Liying; Jie, Wanqi; Wang, Tao; Zhou, Boru; Yang, Fan

2017-03-01

A numerical model is developed to simulate the temperature field, the thermosolutal convection, the solute segregation and the growth interface morphology during the growth of ZnTe crystal from Te rich solution by the temperature gradient solution growth (TGSG) technique. Effects of the temperature gradient on the transport phenomena, the growth interface morphology and the growth rate are examined. The influences of the latent heat and the thermal conductivity of ZnTe crystal on the transport phenomena and the growth interface are also discussed. We find that the mass transfer of ZnTe in the solution is very slow because of the low diffusion coefficient and the lack of mixing in the lower part of the solution. During the growth, dilute solution with high density and low growth temperature accumulates in the central region of the growth interface, making the growth interface change into two distinct parts. The inner part is very concave, while the outer part is relatively flat. Growth conditions in front of the two parts of the growth interface are different. The crystalline quality of the inner part of the ingot is predicted to be worse than that of the outer part. High temperature gradient can significantly increase the growth rate, and avoid the diffusion controlled growth to some extent.

Single-shot terahertz time-domain spectroscopy in pulsed high magnetic fields.

PubMed

Noe, G Timothy; Katayama, Ikufumi; Katsutani, Fumiya; Allred, James J; Horowitz, Jeffrey A; Sullivan, David M; Zhang, Qi; Sekiguchi, Fumiya; Woods, Gary L; Hoffmann, Matthias C; Nojiri, Hiroyuki; Takeda, Jun; Kono, Junichiro

2016-12-26

We have developed a single-shot terahertz time-domain spectrometer to perform optical-pump/terahertz-probe experiments in pulsed, high magnetic fields up to 30 T. The single-shot detection scheme for measuring a terahertz waveform incorporates a reflective echelon to create time-delayed beamlets across the intensity profile of the optical gate beam before it spatially and temporally overlaps with the terahertz radiation in a ZnTe detection crystal. After imaging the gate beam onto a camera, we can retrieve the terahertz time-domain waveform by analyzing the resulting image. To demonstrate the utility of our technique, we measured cyclotron resonance absorption of optically excited carriers in the terahertz frequency range in intrinsic silicon at high magnetic fields, with results that agree well with published values.

Four-wave mixing in CdMnTeSe: In crystals

NASA Astrophysics Data System (ADS)

Koziarska-Glinka, B.; Wojtowicz, T.; Miotkowski, I.; Furdyna, J. K.; Suchocki, A.

1998-02-01

It is shown that the four-wave mixing technique can be used as a spectroscopic tool for studying the properties of bistable centers in semiconductors. Two metastable centers with different lattice relaxation energy have been identified in the Cd 1- xMn xTe 1- ySe x: In crystal. The power dependence of the FWM signal provides additional support for the "negative-U" model of metastable centers in this material.

Melt-growth dynamics in CdTe crystals

DOE PAGES

Zhou, X. W.; Ward, D. K.; Wong, B. M.; ...

2012-06-01

We use a new, quantum-mechanics-based bond-order potential (BOP) to reveal melt growth dynamics and fine scale defect formation mechanisms in CdTe crystals. Previous molecular dynamics simulations of semiconductors have shown qualitatively incorrect behavior due to the lack of an interatomic potential capable of predicting both crystalline growth and property trends of many transitional structures encountered during the melt → crystal transformation. Here, we demonstrate successful molecular dynamics simulations of melt growth in CdTe using a BOP that significantly improves over other potentials on property trends of different phases. Our simulations result in a detailed understanding of defect formation during themore » melt growth process. Equally important, we show that the new BOP enables defect formation mechanisms to be studied at a scale level comparable to empirical molecular dynamics simulation methods with a fidelity level approaching quantum-mechanical methods.« less

Investigation of temperature and concentration oscillations in the directional solidification of Pb-Sn-Te

NASA Technical Reports Server (NTRS)

Anderson, T. J.; Narayanan, R.

1987-01-01

Directional solidification of the pseudobinary compound semiconductor material Pb sub 1-x Sn sub x Te by the Bridgman crystal growth process will be studied. Natural convection in the molten sample will be visualized with a novel electrochemical cell technique that employs the solid electrolyte material yttria-stabilized zirconia. Mass transfer by both diffusion and convection will be measured by detecting the motion of oxygen tracer in the liquid. Additional applications for electrochemical cells in semiconductor crystal growth are suggested. Unsteady convection in the melt will also be detected by the appearance of temperature oscillations. The purpose of this study is to experimentally characterize the overstable conditions for a Pb sub 1-x Sn sub x Te melt in the vertical Bridgman crystal growth technique and use a linear analysis to predict the onset of convection for this system.

Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties

PubMed Central

Ma, Ligang; Liu, Wenchao; Cai, Hongling; Zhang, Fengming; Wu, Xiaoshan

2016-01-01

CdS is an important semiconductor used in optoelectronic devices. Simple techniques for growing CdS nanostructures are thus essential at a low cost. This study presents a novel method for growing single-crystal n-type CdS nanowires on p-type CdTe films by thermal annealing in an H2S/N2 mixed gas flow, which does not require the help of a catalyst or template. The formation process and growth mechanism of the nanowires are investigated. Well-dispersed whiskerlike CdS nanostructures are obtained at an appropriate annealing temperature and duration. We suggest that the stress-driving mechanism of nanowire formation may contribute to the growth of CdS nanowires, and that the evaporation of Te through the boundaries of the CdS grain seeds plays an important role in the sustainable growth of nanowire. In addition, CdS/CdTe heterojunction device is fabricated on Mo glass. The I-V characteristic of the heterojunction in dark shows typical rectifying diode behavior. The turn-on voltage can be regulated by annealing conditions. Meanwhile, the obvious photovoltaic effect is obtained on the in situ growth heterojunction prepared at low annealing temperature. Hence, this is a new fabricated method for CdTe-based materials in the field of energy conversion. PMID:27958306

Multiband nodeless superconductivity near the charge-density-wave quantum critical point in ZrTe3-x Se x

NASA Astrophysics Data System (ADS)

Shan, Cui; Lan-Po, He; Xiao-Chen, Hong; Xiang-De, Zhu; Cedomir, Petrovic; Shi-Yan, Li

2016-07-01

It was found that selenium doping can suppress the charge-density-wave (CDW) order and induce bulk superconductivity in ZrTe3. The observed superconducting dome suggests the existence of a CDW quantum critical point (QCP) in ZrTe3-x Se x near x ≈ 0.04. To elucidate the superconducting state near the CDW QCP, we measure the thermal conductivity of two ZrTe3-x Se x single crystals (x = 0.044 and 0.051) down to 80 mK. For both samples, the residual linear term κ 0/T at zero field is negligible, which is a clear evidence for nodeless superconducting gap. Furthermore, the field dependence of κ 0/T manifests a multigap behavior. These results demonstrate multiple nodeless superconducting gaps in ZrTe3-x Se x , which indicates conventional superconductivity despite of the existence of a CDW QCP. Project supported by the National Basic Research Program of China (Grant Nos. 2012CB821402 and 2015CB921401), the National Natural Science Foundation of China (Grant Nos. 91421101, 11422429, and 11204312), the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, China, and STCSM of China (Grant No. 15XD1500200). Work at Brookhaven National Laboratory was supported by the US DOE under Contract No. DESC00112704.

Structural, electronic, magnetic and optical properties of semiconductor Zn1-xMoxTe compound

NASA Astrophysics Data System (ADS)

Feng, Zhong-Ying; Zhang, Jian-Min

2018-03-01

The structural, electronic, magnetic and optical properties of the Zn1-xMoxTe (x = 0.00, 0.25, 0.50, 0.75, 1.00) have been investigated by the spin-polarized first-principles calculations. The Zn0.50Mo0.50Te has tetragonal structure while the Zn1-xMoxTe (x = 0.00, 0.25, 0.75, 1.00) crystallize in cubic structures. For Zn1-xMoxTe (x = 0.25, 0.50, 0.75, 1.00) alloys, the lattice constant and the volume are found larger than those of pure ZnTe alloy. The Zn1-xMoxTe (x = 0.25, 0.50, 0.75, 1.00) is magnetic and the Mo element is found dominant in the bands crossing the Fermi level in the spin-up channel. The Zn0.75Mo0.25Te and MoTe have half-metallic (HM) behavior. In spin-down channel of the Zn0.75Mo0.25Te, the Zn atom mainly contributed to the conduction band minimum (CBM), while the valence band maximum (VBM) appears mainly due to contribution of Te element. A positive spin splitting and crystal field splitting of d-states of Mo atom has been observed for Zn0.75Mo0.25Te alloy. The maximum values of the absorption coefficients αMAX(ω) of the Zn0.50Mo0.50Te alloy along a or b axes are smaller than the absorption coefficient along c axis. The first absorption peak appearing in the energy range of 0.000-1.000 eV for Zn1-xMoxTe (x = 0.25, 0.50, 0.75 or 1.00) alloys is the new peak which is not observed in ZnTe.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zuocheng; Wei, Wei; Yang, Fangyuan

In this paper, we report quantum oscillation studies on the Bi 2Te 3-xS x topological insulator single crystals in pulsed magnetic fields up to 91 T. For the x = 0.4 sample with the lowest bulk carrier density, the surface and bulk quantum oscillations can be disentangled by combined Shubnikov–de Haas and de Hass–van Alphen oscillations, as well as quantum oscillations in nanometer-thick peeled crystals. At high magnetic fields beyond the bulk quantum limit, our results suggest that the zeroth Landau level of topological surface states is shifted due to the Zeeman effect. The g factor of the topological surfacemore » states is estimated to be between 1.8 and 4.5. Lastly, these observations shed new light on the quantum transport phenomena of topological insulators in ultrahigh magnetic fields.« less

Enhanced linearly polarized lasing emission from nanoimprinted surface-emitting distributed feedback laser based on polymeric liquid crystals

NASA Astrophysics Data System (ADS)

Jeong, Soon Moon; Ha, Na Young; Chee, Mu Guen; Araoka, Fumito; Ishikawa, Ken; Takezoe, Hideo; Nishimura, Suzushi; Suzaki, Goro

2008-12-01

The authors have demonstrated the enhancement of linearly polarized lasing emission intensity using a structure made by a simple fabrication process. The enhanced lasing is achieved using a nanoimprinted distributed feedback structure together with spin-coated polymeric liquid crystals. The backward linearly TE-polarized lasing emission is transformed to left-handed circularly polarized light (L-CPL) by employing a dye-doped polymeric nematic liquid crystal (PNLC) film as a (-1/4)λ[=(3/4)λ] plate. The L-CPL is effectively reflected by a L-polymeric cholesteric liquid crystal film as a reflector and transformed back to TE-polarized light by the PNLC film; as a result one-directional emission intensity is enhanced.

The Ni and Co substitutions in iron chalcogenide single crystals

NASA Astrophysics Data System (ADS)

Bezusyy, V. L.; Gawryluk, D. J.; Malinowski, A.; Berkowski, M.; Cieplak, Marta Z.

2015-03-01

We study the ab-plane resistivity and Hall effect in Fe1-yMyTe0.65Se0.35 single crystals with M =Co or Ni, and y up to 0.2. The crystals are grown by Bridgman's method. The low-temperature Hall coefficient RH changes sign to negative for crystals with y exceeding 0.135 (Co) and 0.06 (Ni), consistent with the electron doping induced by these impurities. However, the RH remains positive for all samples at high T, suggesting that remnant hole pockets survive the doping, but the holes become localized at low T in heavily doped crystals. Superconducting transition temperature (Tc) approaches zero for y = 0.14 (Co), and 0.03 (Ni), while the resistivity at the Tc onset is only weakly affected by Co doping, but it increases strongly for the Ni. These results suggest that in case of Co impurity the Tc suppression may be attributed to electron doping. On the other hand, the Ni substitution, in addition to electron doping, induces strong localization effects at small impurity contents. Using two-band conduction model we argue that the localization of electron carriers is responsible for strong superconductivity suppression by Ni impurity. Supported by EC through the FunDMS Advanced Grant of the ERC (FP7 Ideas), by the Polish NCS Grant 2011/01/B/ST3/00462, and by the French-Polish Program PICS 2012. Performed in the laboratories co-financed by NanoFun Project POIG.02.02.00-00-025/09.

Crystal structure and magnetic properties of FeTe2O5X (X=Cl, Br): a frustrated spin cluster compound with a new Te(IV) coordination polyhedron.

PubMed

Becker, Richard; Johnsson, Mats; Kremer, Reinhard K; Klauss, Hans-Henning; Lemmens, Peter

2006-12-06

A new layered transition metal oxohalide, FeTe2O5ClxBr1-x, has been identified. It crystallizes in the monoclinic space group P21/c. The unit cell for FeTe2O5Br is a = 13.3964(8), b = 6.5966(4), c = 14.2897(6) A, beta=108.118(6) degrees, and Z=8. The layers are built of edge sharing [FeO6] octahedra forming [Fe4O16]20- units that are linked by [Te4O10X2]6- groups. The layers have no net charge and are only weakly connected via van der Waals forces to adjacent layers. There are four crystallographically different Te atoms, and one of them displays a unique [TeO2X] coordination polyhedron (X=Cl, Br). Magnetic susceptibility measurements show a broad maximum typical for 4-spin clusters of coupled Fe(III) ions in the high-spin state. Evidence for magnetic instabilities exists at low temperatures, which have been confirmed with specific heat experiments. A theoretical modeling of the susceptibility concludes a frustration of the intra-tetramer anti-ferromagnetic exchange interaction.

Morphological analysis of GeTe in inline phase change switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, Matthew R., E-mail: matthew.king2@ngc.com; Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695; El-Hinnawy, Nabil

2015-09-07

Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined bymore » variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.« less

Local structure of the SnTe topological crystalline insulator: Rhombohedral distortions emerging from the rocksalt phase

NASA Astrophysics Data System (ADS)

Mitrofanov, K. V.; Kolobov, A. V.; Fons, P.; Krbal, M.; Shintani, T.; Tominaga, J.; Uruga, T.

2014-10-01

AIVBVI crystals are believed to possess a rhombohedral (ferroelectric) structure at low temperature that changes to the rocksalt (paraelectric) structure above the Curie temperature. For GeTe it has been recently demonstrated that locally the structure retains the subsets of the shorter and longer bonds across the ferroelectric-to-paraelectric transition despite acquiring the cubic structure on average. Nothing is known about the existence of local distortions in SnTe, a prototypical topological crystalline insulator, where the crystal symmetry plays a crucial role. In this work we report the results of x-ray absorption measurements. We find that the structure is locally rhombohedrally distorted, and the distortions increase at T >100K, breaking the rocksalt average symmetry. Our density functional theory simulations performed at 0 K indicate that the role of spin-orbit coupling in the formation of the local structure of SnTe at low temperature is negligibly small. The small stochastic distortions do not affect the intrinsic band inversion of SnTe.

Thermoelectric materials ternary penta telluride and selenide compounds

DOEpatents

Sharp, Jeffrey W.

2001-01-01

Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl.sub.2 SnTe.sub.5, Tl.sub.2 GeTe.sub.5, K.sub.2 SnTe.sub.5 and Rb.sub.2 SnTe.sub.5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te.sub.5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (.kappa..sub.g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

Thermoelectric materials: ternary penta telluride and selenide compounds

DOEpatents

Sharp, Jeffrey W.

2002-06-04

Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl.sub.2 SnTe.sub.5, Tl.sub.2 GeTe.sub.5, K.sub.2 SnTe.sub.5 and Rb.sub.2 SnTe.sub.5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te.sub.5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (.kappa..sub.g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

Nanocrystal grain growth and device architectures for high-efficiency CdTe ink-based photovoltaics.

PubMed

Crisp, Ryan W; Panthani, Matthew G; Rance, William L; Duenow, Joel N; Parilla, Philip A; Callahan, Rebecca; Dabney, Matthew S; Berry, Joseph J; Talapin, Dmitri V; Luther, Joseph M

2014-09-23

We study the use of cadmium telluride (CdTe) nanocrystal colloids as a solution-processable "ink" for large-grain CdTe absorber layers in solar cells. The resulting grain structure and solar cell performance depend on the initial nanocrystal size, shape, and crystal structure. We find that inks of predominantly wurtzite tetrapod-shaped nanocrystals with arms ∼5.6 nm in diameter exhibit better device performance compared to inks composed of smaller tetrapods, irregular faceted nanocrystals, or spherical zincblende nanocrystals despite the fact that the final sintered film has a zincblende crystal structure. Five different working device architectures were investigated. The indium tin oxide (ITO)/CdTe/zinc oxide structure leads to our best performing device architecture (with efficiency >11%) compared to others including two structures with a cadmium sulfide (CdS) n-type layer typically used in high efficiency sublimation-grown CdTe solar cells. Moreover, devices without CdS have improved response at short wavelengths.

High compositional homogeneity of CdTe{sub x}Se{sub 1−x} crystals grown by the Bridgman method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.

2015-02-01

We obtained high-quality CdTe{sub x}Se{sub 1−x} (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ∼1.0. This high uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing highermore » efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional Cd{sub x}Zn{sub 1−x}Te (CdZnTe or CZT)« less

High Compositional Homogeneity of CdTe xSe 1-x Crystals Grown by the Bridgman Method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.

2015-02-03

We obtained high-quality CdTe xSe 1-x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The resulting compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ~1.0. This uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing highermore » efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional Cd xZn 1-xTe (CdZnTe or CZT).« less

Imaging atomic-scale effects of high-energy ion irradiation on superconductivity and vortex pinning in Fe(Se,Te)

PubMed Central

Massee, Freek; Sprau, Peter Oliver; Wang, Yong-Lei; Davis, J. C. Séamus; Ghigo, Gianluca; Gu, Genda D.; Kwok, Wai-Kwong

2015-01-01

Maximizing the sustainable supercurrent density, JC, is crucial to high-current applications of superconductivity. To achieve this, preventing dissipative motion of quantized vortices is key. Irradiation of superconductors with high-energy heavy ions can be used to create nanoscale defects that act as deep pinning potentials for vortices. This approach holds unique promise for high-current applications of iron-based superconductors because JC amplification persists to much higher radiation doses than in cuprate superconductors without significantly altering the superconducting critical temperature. However, for these compounds, virtually nothing is known about the atomic-scale interplay of the crystal damage from the high-energy ions, the superconducting order parameter, and the vortex pinning processes. We visualize the atomic-scale effects of irradiating FeSexTe1−x with 249-MeV Au ions and find two distinct effects: compact nanometer-sized regions of crystal disruption or “columnar defects,” plus a higher density of single atomic site “point” defects probably from secondary scattering. We directly show that the superconducting order is virtually annihilated within the former and suppressed by the latter. Simultaneous atomically resolved images of the columnar crystal defects, the superconductivity, and the vortex configurations then reveal how a mixed pinning landscape is created, with the strongest vortex pinning occurring at metallic core columnar defects and secondary pinning at clusters of point-like defects, followed by collective pinning at higher fields. PMID:26601180

Imaging atomic-scale effects of high-energy ion irradiation on superconductivity and vortex pinning in Fe(Se,Te).

PubMed

Massee, Freek; Sprau, Peter Oliver; Wang, Yong-Lei; Davis, J C Séamus; Ghigo, Gianluca; Gu, Genda D; Kwok, Wai-Kwong

2015-05-01

Maximizing the sustainable supercurrent density, J C, is crucial to high-current applications of superconductivity. To achieve this, preventing dissipative motion of quantized vortices is key. Irradiation of superconductors with high-energy heavy ions can be used to create nanoscale defects that act as deep pinning potentials for vortices. This approach holds unique promise for high-current applications of iron-based superconductors because J C amplification persists to much higher radiation doses than in cuprate superconductors without significantly altering the superconducting critical temperature. However, for these compounds, virtually nothing is known about the atomic-scale interplay of the crystal damage from the high-energy ions, the superconducting order parameter, and the vortex pinning processes. We visualize the atomic-scale effects of irradiating FeSe x Te1-x with 249-MeV Au ions and find two distinct effects: compact nanometer-sized regions of crystal disruption or "columnar defects," plus a higher density of single atomic site "point" defects probably from secondary scattering. We directly show that the superconducting order is virtually annihilated within the former and suppressed by the latter. Simultaneous atomically resolved images of the columnar crystal defects, the superconductivity, and the vortex configurations then reveal how a mixed pinning landscape is created, with the strongest vortex pinning occurring at metallic core columnar defects and secondary pinning at clusters of point-like defects, followed by collective pinning at higher fields.

Effect of laser irradiation on Ag4In12Sb56Te28

NASA Astrophysics Data System (ADS)

Chinnusamy, Rangasami

2018-04-01

Ag4In12Sb56Te28 has been synthesized by melt-quench method. Phase homogeneity, crystal structure and effect of laser irradiation have been investigated using X-ray diffraction (XRD) and Raman spectroscopy. Rietveld refinement of crystal structure revealed that Ag4In12Sb56Te28 is a multiphase system with AgIn3Te5, Sb8Te3 and Sb phases. Combined optical microscopy and Raman spectroscopy have been used to understand the distribution of different phases on the surface of the samples, which substantiated the results of Rietveld analysis. Interaction of 20 mW laser beam with samples has been investigated using Raman measurements. The results have shown that regions with large phase fraction of AgIn3Te5 become amorphous during laser-sample interaction, but the starting phase remains nearly same after the interaction. Regions with AgIn3Te5 and nearly equal or larger amount of Sb8Te3 have shown significant growth of α-Sb2O3 during and after laser-sample interaction. Regions rich in Sb have shown formation of AgIn3Te5 and growth of α-Sb2O3 during and after interaction. These observations have been explained based on the maximum temperature rise at different regions during laser-sample interaction.

Effects of europium substitution for In on structure and photoelectric properties of CuIn{sub 1−x}Eu{sub x}Te{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nie, Xiaomeng; Guo, Yongquan

2016-01-15

The structures and optical and electric properties of europium doped CuIn{sub 1−x}Eu{sub x}Te{sub 2} have been studied systematically using powder X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive spectrum (EDS), ultraviolet and visible spectrophotometer (UV–vis), and standard four-probe method. The studies reveal that the minor europium doping into CuIn{sub 1−x}Eu{sub x}Te{sub 2} could still stabilize the chalcopyrite structure in a solid solution of x=0.1. The lattice parameters are going up with increasing the content of europium in CuIn{sub 1−x}Eu{sub x}Te{sub 2} due to the size effect at In site. The structural refinement confirms that Eu partly substitutes formore » In and occupies the 4b crystal position. SEM morphologies show that the europium doping into CuIn{sub 1−x}Eu{sub x}Te{sub 2} can fine the grains from the largely agglomerated state to the uniformly separated state. The electrical resistivities of single phase CuIn{sub 1−x}Eu{sub x}Te{sub 2} follow a mixture model of hopping conductivity and variable range hopping conductivity. The absorption band-gaps of CuIn{sub 1−x}Eu{sub x}Te{sub 2} at room temperature tend to increase with increasing Eu content. CuIn{sub 1−x}Eu{sub x}Te{sub 2} might be a good candidate for photovoltaic cell. - Graphical abstract: CuIn{sub 0.9}Eu{sub 0.1}Te{sub 2} follows a mixture of hopping conductivity and variable range hopping conductivity mechanism. - Highlights: • Novel europium doped CuIn{sub 1−x}Eu{sub x}Te{sub 2}. • Potential application for devices and solar cells. • A mixture of hopping and variable range hopping conductivity mechanism.« less

The Influence of Low Frequency Mechanical Vibrations on the Growth of Single Crystals

NASA Technical Reports Server (NTRS)

Feigelson, R. S.; Elwell, D.

1985-01-01

The optimum conditions for crystal growth are usually achieved either by suppressing convective fluid flows (e.g., by the use of a low-gravity environment) or by over-riding thermal and solutal convection by the use of a strong stirring action. A novel stirring technique has been developed which involves subjecting a vertical crucible to a circle in a horizontal plane (without rotation). Use of an amplitude of 3 mm at a frequency of approx 6 Hz produced complete mixing of a non-uniform aqueous liquid in a few seconds. The mixing action involved the downward flow of liquid in the outer annulus of the liquid, driven by surface waves. When the downward flowing liquid reaches the bottom of the crucible, it is reflected in a central, upward flowing spiral. This flow pattern should be beneficial for crystal growth by the Bridgman method since it will sweep impurities away from the walls and produce a more convex solid-liquid interface. Initial attempts to apply the new stirring technique to CdTe crystal growth did not show significant improvement in the number of crystals nucleated, but the interface shape appeared to be close to that predicted.

Atomic-scale distortions and temperature-dependent large pseudogap in thin films of the parent iron-chalcogenide superconductor Fe1+y Te

NASA Astrophysics Data System (ADS)

Gerbi, Andrea; Buzio, Renato; Kawale, Shrikant; Bellingeri, Emilio; Martinelli, Alberto; Bernini, Cristina; Tresca, Cesare; Capone, Massimo; Profeta, Gianni; Ferdeghini, Carlo

2017-12-01

We investigate with scanning tunneling microscopy/spectroscopy (STM/STS) and density functional theory (DFT) calculations the surface structures and the electronic properties of Fe1+y Te thin films grown by pulsed laser deposition. Contrary to the regular arrangement of antiferromagnetic nanostripes previously reported on cleaved single-crystal samples, the surface of Fe1+y Te thin films displays a peculiar distribution of spatially inhomogeneous nanostripes. Both STM and DFT calculations show the bias-dependent nature of such features and support the interpretation of spin-polarized tunneling between the FeTe surface and an unintentionally magnetized tip. In addition, the spatial inhomogeneity is interpreted as a purely electronic effect related to changes in hybridization and Fe-Fe bond length driven by local variations in the concentration of excess interstitial Fe cations. Unexpectedly, the surface density of states measured by STS strongly evolves with temperature in close proximity to the antiferromagnetic-paramagnetic first-order transition, and reveals a large pseudogap of 180-250 meV at about 50-65 K. We believe that in this temperature range a phase transition takes place, and the system orders and locks into particular combinations of orbitals and spins because of the interplay between excess interstitial magnetic Fe and strongly correlated d-electrons.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Hong-Sub; Park, Hyung-Ho, E-mail: hhpark@yonsei.ac.kr

The resistive switching (RS) phenomenon in transition metal oxides (TMOs) has received a great deal of attention for non-volatile memory applications. Various RS mechanisms have been suggested as to explain the observed RS characteristics. Many reports suggest that changes of interface and the role of oxygen vacancies originate in RS phenomena; therefore, in this study, we use a liquid drop of mercury as the top electrode (TE), epitaxial Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} (PCMO) (110) film of the perovskite manganite family for RS material, and an Nb-doped (0.7 at. %) SrTiO{sub 3} (100) single crystal as the substrate to observe changes inmore » the interface between the TE and TMOs. The use of removable liquid electrode Hg drop as TE not only enables observation of the RS characteristic as a bipolar RS curve (counterclockwise) but also facilitates analysis of the valence band of the PCMO surface after resistive switching via photoelectron spectroscopy. The observed I-V behaviors of the low and high resistance states (HRS) are explained with an electrochemical migration model in PCMO film where accumulated oxygen vacancies at the interface between the Hg TE and PCMO (110) surface induce the HRS. The interpreted RS mechanism is directly confirmed via valence band spectrum analysis.« less

Identifying Au-based Te alloys for optical data storage

NASA Astrophysics Data System (ADS)

Wamwangi, D.; Detemple, R.; Woeltgens, H.-W.; Wuttig, M.; Zhang, X.

2004-06-01

Au18Sb23Te59 and Au19In26Te55 have been investigated to determine their suitability as phase change recording alloys. Recrystallization experiments identify Au18Sb23Te59 as a suitable phase change material with a recrystallization time of 110 ns and high optical contrast. Coupled to the high optical contrast is a considerable density increase of 4% upon crystallization which allows phase change recording for the Au18Sb23Te59 alloy. On the other hand no recrystallization has been observed optically for Au19In26Te55 due to its low optical contrast of less than 1%. This is related to a lower density contrast of 2%. The crystallization for the Au18Sb23Te59 and Au19In26Te55 alloys observed from temperature-dependent sheet resistance measurements have yielded transition temperatures of 113 and 175 °C, and activation barriers of 1.61±0.01 eV and 2.42±0.02 eV, respectively. We report a cubic structure (a=2.99±0.002 Å) for the Au18Sb23Te59 alloy and a chalcopyrite structure (a=6.50±0.018 Å and 12.27±0.025 Å) for the Au19In26Te55 material. These results confirm that suitable phase change alloys possess cubic structures rather than the chalcopyrite structure typical for sp3 bonded semiconductors.

Short range ferromagnetic, magneto-electric, and magneto-dielectric effect in ceramic Co{sub 3}TeO{sub 6}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Harishchandra, E-mail: singh85harish@gmail.com, E-mail: singh85harish@rrcat.gov.in; Ghosh, Haranath; Indus Synchrotrons Utilization Division, Raja Ramanna Center for Advanced Technology, Indore 452013

2016-01-28

We report observation of magneto-electric and magneto-dielectric couplings along with short range ferromagnetic order in ceramic Cobalt Tellurate (Co{sub 3}TeO{sub 6}, CTO) using magnetic, structural, dielectric, pyroelectric, and polarization studies. DC magnetization along with dielectric constant measurements indicate a coupling between magnetic order and electrical polarization. A strong anomaly in the dielectric constant at ∼17.4 K in zero magnetic field indicates spontaneous electric polarization, consistent with a recent neutron diffraction study. Observation of weak short range ferromagnetic order at lower temperatures is attributed to the Griffiths-like ferromagnetism. Furthermore, magnetic field dependence of the ferroelectric transition follows earlier theoretical predictions, applicable tomore » single crystal CTO. Finally, combined dielectric, pyroelectric, and polarization measurements suggest that the ground state of CTO may possess spontaneous symmetry breaking in the absence of magnetic field.« less

Crystal phase-controlled synthesis of rod-shaped AgInTe2 nanocrystals for in vivo imaging in the near-infrared wavelength region

NASA Astrophysics Data System (ADS)

Kameyama, Tatsuya; Ishigami, Yujiro; Yukawa, Hiroshi; Shimada, Taisuke; Baba, Yoshinobu; Ishikawa, Tetsuya; Kuwabata, Susumu; Torimoto, Tsukasa

2016-03-01

Rod-shaped AgInTe2 nanocrystals (NCs) exhibiting intense near-band edge photoluminescence in the near-infrared (NIR) wavelength region, were successfully prepared by the thermal reaction of metal acetates and Te precursors in 1-dodecanethiol. Increasing the reaction temperature resulted in the formation of larger AgInTe2 NCs with crystal structures varying from hexagonal to tetragonal at reaction temperatures of 280 °C or higher. The energy gap was increased from 1.13 to 1.20 eV with a decrease in rod width from 8.3 to 5.6 nm, accompanied by a blue shift in the photoluminescence (PL) peak wavelength from 1097 to 1033 nm. The optimal PL quantum yield was approximately 18% for AgInTe2 NCs with rod widths of 5.6 nm. The applicability of AgInTe2 NCs as a NIR-emitting material for in vivo biological imaging was examined by injecting AgInTe2 NC-incorporated liposomes into the back of a C57BL/6 mouse, followed by in vivo photoluminescence imaging in the NIR region.Rod-shaped AgInTe2 nanocrystals (NCs) exhibiting intense near-band edge photoluminescence in the near-infrared (NIR) wavelength region, were successfully prepared by the thermal reaction of metal acetates and Te precursors in 1-dodecanethiol. Increasing the reaction temperature resulted in the formation of larger AgInTe2 NCs with crystal structures varying from hexagonal to tetragonal at reaction temperatures of 280 °C or higher. The energy gap was increased from 1.13 to 1.20 eV with a decrease in rod width from 8.3 to 5.6 nm, accompanied by a blue shift in the photoluminescence (PL) peak wavelength from 1097 to 1033 nm. The optimal PL quantum yield was approximately 18% for AgInTe2 NCs with rod widths of 5.6 nm. The applicability of AgInTe2 NCs as a NIR-emitting material for in vivo biological imaging was examined by injecting AgInTe2 NC-incorporated liposomes into the back of a C57BL/6 mouse, followed by in vivo photoluminescence imaging in the NIR region. Electronic supplementary information (ESI) available: A detailed synthesis procedure of DSPC-AgInTe2 and analytical data of AgInTe2 NCs. See DOI: 10.1039/c5nr07532g

Synthesis, Transport, and Thermoelectric Studies of Topological Dirac Semimetal Cd3As2 for Room Temperature Waste Heat Recovery and Energy Conversion

NASA Astrophysics Data System (ADS)

Hosseini, Tahereh A.

Rising rates of the energy consumption and growing concerns over the climate change worldwide have made energy efficiency an urgent problem to address. Nowadays, almost two-thirds of the energy produced by burning fossil fuels to generate electrical power is lost in the form of the heat. On this front, increasing electrical power generation through a waste heat recovery remains one of the highly promising venues of the energy research. Thermo-electric generators (TEGs) directly convert thermal energy into electrical and are the prime candidates for application in low-grade thermal energy/ waste heat recovery. The key commercial TE materials, e.g. PbTe and Bi2Te 3, have room temperature ZT of less than 1, whereas ZT exceeding 3 is required for a TEG to be economically viable. With the thermoelectric efficiency typically within a few percent range and a low efficiency-to-cost ratio of TEGs, there has been a resurgence in the search for new class of thermo-electric materials for developing high efficiency thermo-to-electric energy conversion systems, with phonon-glass electron-crystal materials holding the most promise. Herein, we focus on synthesis, characterization and investigation of electrical, thermo-electrical and thermal characteristics of crystalline Cd 3As2, a high performance 3D topological Dirac semimetal with Dirac fermions dispersing linearly in k3-space and possessing one of the largest electron mobilities known for crystalline materials, i.e. 104-105cm2V-1 s-1. Suppression of carrier backscattering, ultra-high charge carrier mobility, and inherently low thermal conductivity make this semimetal a key candidate for demonstrating high, device-favorable S and in turn ZT. In this work, a low-temperature vapor-based crystallization pathway was developed and optimized to produce free standing 2D cm-size crystals in Cd 3As2. Compared to the bulk crystals produced in previous studies, e.g. Piper-Polich, Bridgman, or flux method, Cd3As 2 samples were synthesized over a considerably shorter time ( only a few hours), were single crystals and highly stochiometric. A high thermopower of up to 613 microV K-1 and the electrical conductivity of 105 S/m were registered within the temperature range of 300-400 K. A 1o-method based on the transfer function was applied to probe a thermal conductivity, k of Cd3As2 platelets. The results yield k of 2.4 W/m.K in the confirmation that the thermal conductivity of Cd3As2 crystals is to approach the amorphous limit at the room temperature. With its peak thermopower attained at the low temperature range of 300-400 K, high electrical conductivity and amorphous limit thermal conductivity, crystalline Cd3As2 grown via a low-T vapor based method demonstrates ZT > 3; the results confirm that as-produced Cd 3As2 platelets hold a high promise and is another phonon-glass electron-crystal TE material for the development of next generation, high efficiency thermo-electric generators and refrigerators operating under normal conditions.

Defect chemistry and characterization Hg(1-x)Cd(x)Te

NASA Technical Reports Server (NTRS)

Vydyanath, H. R.; Donovan, J. C.

1981-01-01

Iodine doped single crystal samples of mercury cadmium telluride were annealed at temperatures varying from 450 C to 600 C in Hg vapor and quenched to room temperature. Hall effect measurements at 77 K on the crystals cooled to room temperature indicate the samples to be n-type after anneals at high Hg pressures whereas they turn p-type after anneals at low Hg pressures; the electron concentration increases with increase in Hg pressure. The results are explained on the basis that the crystals are saturated with (Hg,Cd)I2, with a fraction of the iodine being present as donor occupying tellurium lattice sites and a fraction being present as acceptors resulting from the iodine on tellurium lattice sites pairing with the doubly ionized native acceptor defects. The solubility of the donor species increases with increase in Hg pressure, whereas that of the acceptor species increases with decrease in Hg pressure. Equilibrium constants for the incorporation of the iodine species as well as the pairing reaction were established.

Diffusive-convective physical vapor transport of PbTe from a Te-rich solid source

NASA Technical Reports Server (NTRS)

Zoutendyk, J.; Akutagawa, W.

1982-01-01

Crystal growth of PbTe by physical vapor transport (sublimation) in a closed ampoule is governed by the vapor species in thermal equilibrium with the solid compound. Deviations from stoichiometry in the source material cause diffusion limitation of the transport rate, which can be modified by natural (gravity-driven) convection. Mass-transport experiments have been performed using Te-rich material wherein sublimation rates have been measured in order to study the effects of natural convection in diffusion-limited vapor transport. Linear velocities for both crystal growth and evaporation (back sublimation) have been measured for transport in the direction of gravity, horizontally, and opposite to gravity. The experimental results are discussed in terms of both the one-dimensional diffusive-advective model and current, more sophisticated theory which includes natural convection. There is some evidence that convection effects from radial temperature gradients and solutal density gradients have been observed.

Error Measurements in an Acousto-Optic Tunable Filter Fiber Bragg Grating Sensor System

DTIC Science & Technology

1994-05-01

for an ideal AOTF, at 833 and 838 nm using a TeO2 crystal ............................ 33 Figure 3.12. Frequency characteristics of Equation (3.43...multiple channels in an AOTF requires the presence of multiple RF frequencies to establish the complex grating. Since the crystal used in the AOTF ( TeO2 ) is...in germano- silicate glass . This index modulation, Bragg grating, acts as an optical band rejection filter for those wavelengths that meet the Bragg

The Origin and Time Dependence of the Amount and Composition of Non-Constituent Gases Present in Crystal Growth Systems

NASA Technical Reports Server (NTRS)

Palosz, Witold

1998-01-01

Presence of different, non-constituent gases may be a critical factor in crystal growth systems. In Physical Vapor Transport processes the cras(es) can be used intentionally (to prevent excessively high, unstable growth conditions), or can evolve unintentionally during the course of the process (which may lead to undesired reduction in the -rowth rate). In melt growth, particularly under low gravity conditions (reduced hydrostatic pressure) the gas present in the system may contribute to formation of voids in the growing crystals and even to a separation of the crystal and the liquid phase [1]. On the other hand, some amount of gas may facilitate 'contactless' crystal growth particularly under reduced gravity conditions [2 - 6]. Different non-constituent gases may be present in growth ampoules, and their amount and composition may change during the crystallization process. Some gases can appear even in empty ampoules sealed originally under high vacuum: they may diffuse in from the outside, and/or desorb from the ampoule walls. Residual gases can also be generated by the source materials: even very high purity commercial elements and compounds may contain trace amounts of impurities, particularly oxides. The oxides may have low volatilities themselves but their reaction with other species, particularly carbon and hydrogen, may produce volatile compounds like water or carbon oxides. The non-constituent gases, either added initially to the system or evolved during the material processing, may diffuse out of the ampoule during the course of the experiment. Gases present outside (e.g. as a protective atmosphere or thermal conductor) may diffuse into the ampoule. In either case the growth conditions and the quality of the crystals may be affected. The problem is of a particular importance in sealed systems where the amount of the gases cannot be directly controlled. Therefore a reasonable knowledge and understanding of the origin, composition, magnitude, and change with time of gases present in sealed ampoules may be important for a meaningful control and interpretation of crystal growth processes. This problem is of a particular importance for processing of electronic materials in space because (i) safety considerations require using sealed systems only, and (ii) high cost of crystal growth experiments in microgravity calls for a throughout, accurate description of the processing conditions necessary for a meaningful, efficient, and conclusive interpretation of the space results. In this paper we present the results of our extensive studies on gases in closed crystal growth systems which include: (a) Degassing properties of fused silica; (b) Generation of inert gases by source materials (CdTe, ZnTe, CdZnTe, ZnSe, PbTe, PbSe, PbSeTe); (c) Diffusive cas losses from silica glass ampoules.

Physical properties of the heterojunction MoOx/n-CdTe as a function of the parameters of CdTe crystals

NASA Astrophysics Data System (ADS)

Mostovyi, Andrii I.; Solovan, Mykhailo M.; Brus, Viktor V.; Pullerits, Toǧnu; Maryanchuk, Pavlo D.

2018-01-01

MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (ρ1=0.4 Ωṡcm, ρ2=10 Ωṡcm, ρ3=40 Ωṡcm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases.

New oxyfluorotellurates(IV): MTeO3F (M = FeIII, GaIII and CrIII).

PubMed

Laval, Jean Paul; Jennene Boukharrata, Nefla; Thomas, Philippe

2008-02-01

The crystal structures of the new isomorphous compounds iron(III) oxyfluorotellurate(IV), FeTeO(3)F, gallium(III) oxyfluorotellurate(IV), GaTeO(3)F, and chromium(III) oxyfluorotellurate(IV), CrTeO(3)F, consist of zigzag chains of MO(4)F(2) distorted octahedra alternately sharing O-O and F-F edges and connected via TeO(3) trigonal pyramids. A full O/F anionic ordering is observed and the electronic lone pair of the Te(IV) cation is stereochemically active.

ARPES Study on the Strongly Correlated Iron Chalcogenides Fe1+ySexTe1-x

NASA Astrophysics Data System (ADS)

Liu, Zhongkai

2014-03-01

The level of electronic correlation has been one of the key questions in understanding the nature of iron-based superconductivity. Using Angle Resolved Photoemission Spectroscopy (ARPES), we systematically investigated the correlation level in the iron chalcogenide family Fe1+ySexTe1-x. For the parent compound Fe1.02Te, we discovered ``peak-dip-hump'' spectra with heavily renormalized quasiparticles in the low temperature antiferromagnetic (AFM) state, characteristic of coherent polarons seen in other correlated materials with complex electronic and lattice interactions. As the temperature (or Se ratio x) increases and Fe1.02SexTe1-x is in the paramagnetic (PM) phase, we observed dissociation behavior of polarons, suggestive of connection between the weakening electron-phonon coupling and AFM. Further increase of x leads to an incoherent to coherent crossover in the electronic structure, indicating a reduction in the electronic correlation as the superconductivity emerges. Furthermore, the reduction of the electronic correlation in Fe1+ySexTe1-x evolves in an orbital-dependent way, where the dxy orbital is influenced most significantly. At the other end of the phase diagram (FeSe) where the single crystal is not stable, we have studied the MBE-grown thin film which also reveals orbital-dependent strong correlation in the electronic structure. Our findings provide a quantitative comprehension on the correlation level and its evolution on the phase diagram of Fe1+ySexTe1-x. We discuss the physical scenarios leading to strong correlations and its connection to superconductivity.

Single-shot terahertz time-domain spectroscopy in pulsed high magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noe, II, G. Timothy; Katayama, Ikufumi; Katsutani, Fumiya

Here, we have developed a single-shot terahertz time-domain spectrometer to perform optical-pump/terahertz-probe experiments in pulsed, high magnetic fields up to 30 T. The single-shot detection scheme for measuring a terahertz waveform incorporates a reflective echelon to create time-delayed beamlets across the intensity profile of the optical gate beam before it spatially and temporally overlaps with the terahertz radiation in a ZnTe detection crystal. After imaging the gate beam onto a camera, we can retrieve the terahertz time-domain waveform by analyzing the resulting image. To demonstrate the utility of our technique, we measured cyclotron resonance absorption of optically excited carriers inmore » the terahertz frequency range in intrinsic silicon at high magnetic fields, with results that agree well with published values.« less

Single-shot terahertz time-domain spectroscopy in pulsed high magnetic fields

DOE PAGES

Noe, II, G. Timothy; Katayama, Ikufumi; Katsutani, Fumiya; ...

2016-12-22

Here, we have developed a single-shot terahertz time-domain spectrometer to perform optical-pump/terahertz-probe experiments in pulsed, high magnetic fields up to 30 T. The single-shot detection scheme for measuring a terahertz waveform incorporates a reflective echelon to create time-delayed beamlets across the intensity profile of the optical gate beam before it spatially and temporally overlaps with the terahertz radiation in a ZnTe detection crystal. After imaging the gate beam onto a camera, we can retrieve the terahertz time-domain waveform by analyzing the resulting image. To demonstrate the utility of our technique, we measured cyclotron resonance absorption of optically excited carriers inmore » the terahertz frequency range in intrinsic silicon at high magnetic fields, with results that agree well with published values.« less

Low-temperature high-Z gamma-detectors with very high energy resolution

NASA Astrophysics Data System (ADS)

Pobes, Carlos; Brofferio, Chiara; Bucci, Carlo; Cremonesi, Oliviero; Fiorini, Ettore; Giuliani, Andrea; Nucciotti, Angelo; Pavan, Maura; Pedretti, Marisa; Pessina, Gianluigi; Pirro, Stefano; Previtali, Ezio; Sisti, Monica; Vanzini, Marco; Zanotti, Luigi

2001-12-01

High-Z low-temperature calorimeters are developed by an Italian collaboration (Milano-Como-Gran Sasso Underground Laboratories) in order to search for rare nuclear events and Dark Matter massive candidates. They exhibit an excellent energy resolution, close to that of Ge-diodes, but a much higher efficiency. Different high-Z materials were initially employed . A many-years optimisation work on tellurium oxide (TeO2) lead to impressive results: devices with total masses around 750 g present FWHM energy resolutions on gamma-ray peaks ranging from 1 KeV (close to the 5 KeV energy threshold) to 2.6 KeV at 2615 KeV (208Tl gamma line). A 3.2 KeV FWHM energy resolution was obtained at 5.4 MeV (210Po alpha line), which is by far the best one ever achieved with any alpha detector. These devices, operated at about 10 mK, consist of a TeO2 single crystal thermally coupled to a 50 mg Neutron Transmutation Doped (NTD) Ge crystal working as a temperature sensor. Special care was devoted to methods for response linearization and temporal stabilisation. Devices based on the same principle and specifically optimised could find applications in several fields like gamma-ray astrophysics, nuclear physics searches, environmental monitoring and radiation metrology.

Clusters of Point Defects Near Dislocations as a Tool to Control CdZnTe Electrical Parameters by Ultrasound

NASA Astrophysics Data System (ADS)

Olikh, Ya. M.; Tymochko, M. D.; Olikh, O. Ya.; Shenderovsky, V. A.

2018-05-01

We studied the temperature dependence (77-300 K) of the electron concentration and mobility using the Hall method under ultrasound (the acoustic Hall method) to determine the mechanisms by which ultrasound influences the electrical activity of near-dislocation clusters in n-type low-ohmic Cd1-x Zn x Te single crystals (N Cl ≈ 1024 m-3; x = 0; 0.04) with different dislocation density (0.4-5.1) × 1010 m-2. Changes in electrophysical parameters were found to occur as a function of temperature and ultrasound intensity. To evaluate the relative contribution of different charge carrier scattering mechanisms (lattice scattering, ionized impurity scattering, neutral impurity scattering, and dislocation scattering) and their change under ultrasound, a differential evolution method was used. This method made it possible to analyze experimental mobility μ H(T) by its nonlinear approximation with characteristic temperature dependence for each mechanism. An increase in neutral impurity scattering and a decrease in ionized impurity and dislocation scattering components were observed under ultrasound. The character and the amount of these acoustically induced changes correlate with particular sample dislocation characteristics. It was concluded that the observed effects are related to the acoustically induced transformation of the point-defect structure, mainly in the near dislocation crystal regions.

Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

DOE PAGES

Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; ...

2015-02-11

Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an ordermore » of 10 2. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 -5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 -5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.« less

Growth of Cadmium-Zinc Telluride Crystals by Controlled Seeding Contactless Physical Vapor Transport

NASA Technical Reports Server (NTRS)

Palosz, W.; Grasza, K.; Gillies, D.; Jerman, G.

1996-01-01

Bulk crystals of cadmium-zinc telluride, 23 mm in diameter and up to 45 grams in weight were grown. Controlled seed formation procedure was used to limit the number of grains in the crystal. Most uniform distribution of ZnTe in the crystals was obtained using excess (Cd + Zn) pressure in the ampoule.

Development and evaluation of polycrystalline cadmium telluride dosimeters for accurate quality assurance in radiation therapy

NASA Astrophysics Data System (ADS)

Oh, K.; Han, M.; Kim, K.; Heo, Y.; Moon, C.; Park, S.; Nam, S.

2016-02-01

For quality assurance in radiation therapy, several types of dosimeters are used such as ionization chambers, radiographic films, thermo-luminescent dosimeter (TLD), and semiconductor dosimeters. Among them, semiconductor dosimeters are particularly useful for in vivo dosimeters or high dose gradient area such as the penumbra region because they are more sensitive and smaller in size compared to typical dosimeters. In this study, we developed and evaluated Cadmium Telluride (CdTe) dosimeters, one of the most promising semiconductor dosimeters due to their high quantum efficiency and charge collection efficiency. Such CdTe dosimeters include single crystal form and polycrystalline form depending upon the fabrication process. Both types of CdTe dosimeters are commercially available, but only the polycrystalline form is suitable for radiation dosimeters, since it is less affected by volumetric effect and energy dependence. To develop and evaluate polycrystalline CdTe dosimeters, polycrystalline CdTe films were prepared by thermal evaporation. After that, CdTeO3 layer, thin oxide layer, was deposited on top of the CdTe film by RF sputtering to improve charge carrier transport properties and to reduce leakage current. Also, the CdTeO3 layer which acts as a passivation layer help the dosimeter to reduce their sensitivity changes with repeated use due to radiation damage. Finally, the top and bottom electrodes, In/Ti and Pt, were used to have Schottky contact. Subsequently, the electrical properties under high energy photon beams from linear accelerator (LINAC), such as response coincidence, dose linearity, dose rate dependence, reproducibility, and percentage depth dose, were measured to evaluate polycrystalline CdTe dosimeters. In addition, we compared the experimental data of the dosimeter fabricated in this study with those of the silicon diode dosimeter and Thimble ionization chamber which widely used in routine dosimetry system and dose measurements for radiation therapy.

Effect of potassium doping on electronic structure and thermoelectric properties of topological crystalline insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roychowdhury, Subhajit; Biswas, Kanishka, E-mail: kanishka@jncasr.ac.in; Sandhya Shenoy, U.

2016-05-09

Topological crystalline insulator (TCI), Pb{sub 0.6}Sn{sub 0.4}Te, exhibits metallic surface states protected by crystal mirror symmetry with negligibly small band gap. Enhancement of its thermoelectric performances needs tuning of its electronic structure particularly through engineering of its band gap. While physical perturbations tune the electronic structure of TCI by breaking of the crystal mirror symmetry, chemical means such as doping have been more attractive recently as they result in better thermoelectric performance in TCIs. Here, we demonstrate that K doping in TCI, Pb{sub 0.6}Sn{sub 0.4}Te, breaks the crystal mirror symmetry locally and widens electronic band gap, which is confirmed bymore » direct electronic absorption spectroscopy and electronic structure calculations. K doping in Pb{sub 0.6}Sn{sub 0.4}Te increases p-type carrier concentration and suppresses the bipolar conduction via widening a band gap, which collectively boosts the thermoelectric figure of merit (ZT) to 1 at 708 K.« less

The microstructural changes of Ge2Sb2Te5 thin film during crystallization process

NASA Astrophysics Data System (ADS)

Xu, Jingbo; Qi, Chao; Chen, Limin; Zheng, Long; Xie, Qiyun

2018-05-01

Phase change memory is known as the most promising candidate for the next generation nonvolatile memory technology. In this paper, the microstructural changes of Ge2Sb2Te5 film, which is the most common choice of phase change memory material, has been carefully studied by the combination of several characterization techniques. The combination of resistance measurements, X-ray diffraction, Raman spectroscopy and X-ray reflectivity allows us to simultaneously extract the characteristics of microstructural changes during crystallization process. The existence of surface/interface Ge2Sb2Te5 layer has been proposed here based on X-ray reflectivity measurements. Although the total film thickness decreases, as a result of the phase transition from amorphous to metastable crystalline cubic and then to the stable hexagonal phase, the surface/interface thickness increases after crystallization. Moreover, the increase of average grain size, density and surface roughness has been confirmed during thermal annealing process.

Point defects in CdTe xSe 1-x crystals grown from a Te-rich solution for applications in detecting radiation

DOE PAGES

Gul, R.; Roy, U. N.; Bolotnikov, A. E.; ...

2015-04-15

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

Creation and Analysis of Atomic Structures for CdTe Bi-crystal Interfaces by the Grain Boundary Genie

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buurma, Christopher; Sen, Fatih G.; Paulauskas, Tadas

2015-01-01

Grain boundaries (GB) in poly-CdTe solar cells play an important role in species diffusion, segregation, defect formation, and carrier recombination. While the creation of specific high-symmetry interfaces can be straight forward, the creation of general GB structures in many material systems is difficult if periodic boundary conditions are to be enforced. Here we describe a novel algorithm and implementation to generate initial general GB structures for CdTe in an automated way, and we investigate some of these structures using density functional theory (DFT). Example structures include those with bi-crystals already fabricated for comparison, and those planning to be investigated inmore » the future.« less

Interface shapes during vertical Bridgman growth of (Pb, Sn)Te crystals

NASA Technical Reports Server (NTRS)

Huang, YU; Debnam, William J.; Fripp, Archibald L.

1990-01-01

Melt-solid interfaces obtained during vertical Bridgman growth of (Pb, Sn)Te crystals were investigated with a quenching technique. The shapes of these interfaces, revealed by etching longitudinally cut sections, were correlated with the composition variations determined by EMPA. These experiments demonstrated that the interface shape can be changed from concave to convex by moving its location from the edge of the cold zone into the hot zone. The metallography and microsegregation near the melt-solid interface were analyzed in detail. A sharp change in composition above the interface indicated the existence of a diffusion boundary layer 40-90 microns thick. This small diffusion boundary layer is consistent with strong convective mixing in the (Pb, Sn)Te melt.

Experimental study of THz electro-optical sampling crystals ZnSe, ZnTe and GaP

NASA Astrophysics Data System (ADS)

Zhukova, M.; Makarov, E.; Putilin, S.; Tsypkin, A.; Chegnov, V.; Chegnova, O.; Bespalov, V.

2017-11-01

The application of optoelectronic techniques to the generation and detection of THz radiation is now well established. Wide gap semiconductor crystals of groups II-VI, III-V and III-VI are abundantly used. However, some limitations are occurred while using powerful laser systems. In this paper we introduce experimental results of two-photon absorption (2PA) in ZnSe, ZnTe and GaP studied with femtosecond pump-probe supercontinuum spectroscopy. Using of supercontinuum helps us to measure 2PA absorption dynamics and nonlinear index of refraction in wide frequency ranges. Besides influence of Fe concentration in ZnSe:Fe crystals on transmitted THz radiation is described.

Crystallization and preliminary X-ray crystallographic analysis of latent isoform PPO4 mushroom (Agaricus bisporus) tyrosinase

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mauracher, Stephan Gerhard; Molitor, Christian; Al-Oweini, Rami

Polyphenol oxidase 4 (PPO4) from the natural source A. bisporus was crystallized in its latent precursor form (pro-tyrosinase; Ser2–Thr565) using the 6-tungstotellurate(VI) salt Na{sub 6}[TeW{sub 6}O{sub 24}]·22H{sub 2}O as a crystallization additive. Tyrosinase exhibits catalytic activity for the ortho-hydroxylation of monophenols to diphenols as well as their subsequent oxidation to quinones. Owing to polymerization of these quinones, brown-coloured high-molecular-weight compounds called melanins are generated. The latent precursor form of polyphenol oxidase 4, one of the six tyrosinase isoforms from Agaricus bisporus, was purified to homogeneity and crystallized. The obtained crystals belonged to space group C121 (two molecules per asymmetric unit)more » and diffracted to 2.78 Å resolution. The protein only formed crystals under low-salt conditions using the 6-tungstotellurate(VI) salt Na{sub 6}[TeW{sub 6}O{sub 24}]·22H{sub 2}O as a co-crystallization agent.« less

SAW propagation characteristics of TeO3/3C-SiC/LiNbO3 layered structure

NASA Astrophysics Data System (ADS)

Soni, Namrata D.

2018-04-01

Surface acoustic wave (SAW) devices based on Lithium Niobate (LiNbO3) single crystal are advantageous because of its high SAW phase velocity, electromechanical coupling coefficient and cost effectiveness. In the present work a new multi-layered TeO3/3C-SiC/128° Y-X LiNbO3 SAW device has been proposed. SAW propagation properties such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of the TeO3/SiC/128° Y-X LiNbO3 multi layered structure is examined using theoretical calculations. It is found that the integration of 0.09λ thick 3C-SiC over layer on 128° Y-X LiNbO3 increases its electromechanical coupling coefficient from 5.3% to 9.77% and SAW velocity from 3800 ms‑1 to 4394 ms‑1. The SiC/128° Y-X LiNbO3 bilayer SAW structure exhibits a high positive TCD value. A temperature stable layered SAW device could be obtained with introduction of 0.007λ TeO3 over layer on SiC/128° Y-X LiNbO3 bilayer structure without sacrificing the efficiency of the device. The proposed TeO3/3C-SiC/128° Y-X LiNbO3 multi-layered SAW structure is found to be cost effective, efficient, temperature stable and suitable for high frequency application in harsh environment.

Hitting the target: fragment screening with acoustic in situ co-crystallization of proteins plus fragment libraries on pin-mounted data-collection micromeshes.

PubMed

Yin, Xingyu; Scalia, Alexander; Leroy, Ludmila; Cuttitta, Christina M; Polizzo, Gina M; Ericson, Daniel L; Roessler, Christian G; Campos, Olven; Ma, Millie Y; Agarwal, Rakhi; Jackimowicz, Rick; Allaire, Marc; Orville, Allen M; Sweet, Robert M; Soares, Alexei S

2014-05-01

Acoustic droplet ejection (ADE) is a powerful technology that supports crystallographic applications such as growing, improving and manipulating protein crystals. A fragment-screening strategy is described that uses ADE to co-crystallize proteins with fragment libraries directly on MiTeGen MicroMeshes. Co-crystallization trials can be prepared rapidly and economically. The high speed of specimen preparation and the low consumption of fragment and protein allow the use of individual rather than pooled fragments. The Echo 550 liquid-handling instrument (Labcyte Inc., Sunnyvale, California, USA) generates droplets with accurate trajectories, which allows multiple co-crystallization experiments to be discretely positioned on a single data-collection micromesh. This accuracy also allows all components to be transferred through small apertures. Consequently, the crystallization tray is in equilibrium with the reservoir before, during and after the transfer of protein, precipitant and fragment to the micromesh on which crystallization will occur. This strict control of the specimen environment means that the crystallography experiments remain identical as the working volumes are decreased from the few microlitres level to the few nanolitres level. Using this system, lysozyme, thermolysin, trypsin and stachydrine demethylase crystals were co-crystallized with a small 33-compound mini-library to search for fragment hits. This technology pushes towards a much faster, more automated and more flexible strategy for structure-based drug discovery using as little as 2.5 nl of each major component.

Hitting the target: fragment screening with acoustic in situ co-crystallization of proteins plus fragment libraries on pin-mounted data-collection micromeshes

PubMed Central

Yin, Xingyu; Scalia, Alexander; Leroy, Ludmila; Cuttitta, Christina M.; Polizzo, Gina M.; Ericson, Daniel L.; Roessler, Christian G.; Campos, Olven; Ma, Millie Y.; Agarwal, Rakhi; Jackimowicz, Rick; Allaire, Marc; Orville, Allen M.; Sweet, Robert M.; Soares, Alexei S.

2014-01-01

Acoustic droplet ejection (ADE) is a powerful technology that supports crystallographic applications such as growing, improving and manipulating protein crystals. A fragment-screening strategy is described that uses ADE to co-crystallize proteins with fragment libraries directly on MiTeGen MicroMeshes. Co-crystallization trials can be prepared rapidly and economically. The high speed of specimen preparation and the low consumption of fragment and protein allow the use of individual rather than pooled fragments. The Echo 550 liquid-handling instrument (Labcyte Inc., Sunnyvale, California, USA) generates droplets with accurate trajectories, which allows multiple co-crystallization experiments to be discretely positioned on a single data-collection micromesh. This accuracy also allows all components to be transferred through small apertures. Consequently, the crystallization tray is in equilibrium with the reservoir before, during and after the transfer of protein, precipitant and fragment to the micromesh on which crystallization will occur. This strict control of the specimen environment means that the crystallography experiments remain identical as the working volumes are decreased from the few microlitres level to the few nanolitres level. Using this system, lysozyme, thermolysin, trypsin and stachydrine demethylase crystals were co-crystallized with a small 33-compound mini-library to search for fragment hits. This technology pushes towards a much faster, more automated and more flexible strategy for structure-based drug discovery using as little as 2.5 nl of each major component. PMID:24816088

Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga{sub 1−x}Fe{sub x}Te

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pekarek, T. M.; Edwards, P. S.; Olejniczak, T. L.

2016-05-15

Magnetic properties of single crystalline Ga{sub 1−x}Fe{sub x}Te (x = 0.05) have been measured. GaTe and related layered III-VI semiconductors exhibit a rich collection of important properties for THz generation and detection. The magnetization versus field for an x = 0.05 sample deviates from the linear response seen previously in Ga{sub 1−x}Mn{sub x}Se and Ga{sub 1−x}Mn{sub x}S and reaches a maximum of 0.68 emu/g at 2 K in 7 T. The magnetization of Ga{sub 1−x}Fe{sub x}Te saturates rapidly even at room temperature where the magnetization reaches 50% of saturation in a field of only 0.2 T. In 0.1 T atmore » temperatures between 50 and 400 K, the magnetization drops to a roughly constant 0.22 emu/g. In 0 T, the magnetization drops to zero with no hysteresis present. The data is consistent with Van-Vleck paramagnetism combined with a pronounced crystalline anisotropy, which is similar to that observed for Ga{sub 1−x}Fe{sub x}Se. Neither the broad thermal hysteresis observed from 100-300 K in In{sub 1−x}Mn{sub x}Se nor the spin-glass behavior observed around 10.9 K in Ga{sub 1−x}Mn{sub x}S are observed in Ga{sub 1−x}Fe{sub x}Te. Single crystal x-ray diffraction data yield a rhombohedral space group bearing hexagonal axes, namely R3c. The unit cell dimensions were a = 5.01 Å, b = 5.01 Å, and c = 17.02 Å, with α = 90°, β = 90°, and γ = 120° giving a unit cell volume of 369 Å{sup 3}.« less

Local structure of amorphous Ag5In5Sb60Te30 and In3SbTe2 phase change materials revealed by X-ray photoelectron and Raman spectroscopic studies

NASA Astrophysics Data System (ADS)

Sahu, Smriti; Manivannan, Anbarasu; Shaik, Habibuddin; Mohan Rao, G.

2017-07-01

Reversible switching between highly resistive (binary "0") amorphous phase and low resistive (binary "1") crystalline phase of chalcogenide-based Phase Change Materials is accredited for the development of next generation high-speed, non-volatile, data storage applications. The doped Sb-Te based materials have shown enhanced electrical/optical properties, compared to Ge-Sb-Te family for high-speed memory devices. We report here the local atomic structure of as-deposited amorphous Ag5In5Sb60Te30 (AIST) and In3SbTe2 (IST) phase change materials using X-ray photoelectron and Raman spectroscopic studies. Although AIST and IST materials show identical crystallization behavior, they differ distinctly in their crystallization temperatures. Our experimental results demonstrate that the local environment of In remains identical in the amorphous phase of both AIST and IST material, irrespective of its atomic fraction. In bonds with Sb (˜44%) and Te (˜56%), thereby forming the primary matrix in IST with a very few Sb-Te bonds. Sb2Te constructs the base matrix for AIST (˜63%) along with few Sb-Sb bonds. Furthermore, an interesting assimilation of the role of small-scale dopants such as Ag and In in AIST, reveals rare bonds between themselves, while showing selective substitution in the vicinity of Sb and Te. This results in increased electronegativity difference, and consequently, the bond strength is recognized as the factor rendering stability in amorphous AIST.

Recent Developments in Neutrino Science: A Whole Lot About Almost Nothing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Norman, E B

2005-08-22

Results from Super-K, SNO, and KamLAND provide strong evidence that neutrinos undergo flavor-changing oscillations and therefore have non-zero mass. The {nu}-disappearance observations by KamLAND, assuming CPT conservation, point to matter enhanced (MSW) oscillations with large mixing angles as the solution to the solar neutrino problem--a result consistent with the MSW parameters recently defined by these experiments. This requires that the observed neutrino flavors (e, {mu}, and tau) are not mass eigenstates, but are linear combinations of the mass eigenstates of the neutrino. However, such oscillation experiments can only determine the differences in the masses of the neutrinos, not the absolutemore » scale of neutrino mass. What can be inferred from these experiments is that at least one species of neutrino has a mass greater than 55 meV. In fact, the WMAP observations of large-scale structure point to a sum-neutrino mass of {approx} 0.7 eV (roughly 0.25 eV/species assuming democracy between the flavors). Furthermore, there is still the important issue of whether the neutrino and anti-neutrino are distinct particles (i.e. Dirac type) or not (Majorana type). The only way to answer both of these questions is through neutrinoless double beta decay (DBD) experiments. CUORE (Cryogenic Underground Observatory for Rare Events) is a proposed next generation experiment designed to search for the neutrinoless DBD of {sup 130}Te using a bolometric technique. The source/detector will be composed of 988 5 x 5 x 5-cm single crystals of TeO{sub 2} all housed in a common dilution refrigerator and operated at a temperature of 8-10 mK. The total mass of {sup 130}Te contained in CUORE will be approximately 203 kg. Attached to each crystal will be one or more neutron-transmutation doped (NTD) germanium thermistors that will measure the small temperature rise produced in a crystal when radiation is absorbed. A schematic illustration of the CUORE detector is shown in Figure 1. Details about the TeO{sub 2} cryogenic detector are contained in a NIM A paper and the physics potential of CUORE is described in a recent article in Astroparticle Physics. A complete description of the CUORE project is also available online. The estimated sensitivity of CUORE illustrated in Figure 2 is sufficient to cover essentially all of the so-called inverted mass hierarchy region deduced from the oscillation experiments. There are several compelling reasons to study {sup 130}Te DBD. The {beta}{beta} decay of {sup 130}Te has been observed in geo-chemical experiments. Thus, a direct laboratory measurement of the 2{nu} {beta}{beta} decay rate will provide an excellent calibration for 0{nu}-DBD. Second, because of its large decay energy and large expected nuclear matrix element, the half-life of {sup 130}Te is predicted to be shorter than that of a number of other candidate isotopes. Third, based on the sensitivity needed to reach the mass scales inferred from the above-mentioned oscillation experiments, the {sup 130}Te experiment can be done utilizing the natural abundance of {sup 130}Te (34%), without the time and expense of obtaining separated isotopes. Of all the proposed next generation DBD experiments, only CUORE can reach the needed sensitivity without isotopic enrichment.« less

Thermocapillary flow stability in floating zone under low gravity

NASA Astrophysics Data System (ADS)

Bouizi, O.; Dang Vu-Delcarte, C.; Kasperski, G.

The floating zone is a crucible-free process used to produce high-quality crystals. A molten zone is created by a lateral heating between a feed and a single crystal rod, and helds by capillary forces. The translation of the material through the heat flux induces the solidification of the crystal. Temperature gradients induce surface tension variations which are the source of thermocapillary convection. In order to reduce buoyancy effects, experiments have been performed in a low gravity environment te{Croll} and have demonstrated that thermocapillary convection alone can induce defects in the product due to flow instabilities. A major goal is to identify the mechanisms leading to the growth of those instabilities. The experimental difficulty comes from the fact that measurements in the core of the flow are usually limited to transparent fluids, that is having a Prandtl number value (Pr), ratio of the characteristic thermal to dynamical diffusion times, larger than 6 or so. However, it has been shown that, just as well in real experiments as in numerical experiences, performed on the simplified half-zone model, the transitions thresholds strongly depend on the Prandtl number value te{Carotenuto}, te{Levenstam}. It is thus interesting to study the nature and thresholds of the instabilities of the thermocapillary flow in a full liquid bridge as a function of the Prandtl number. In that case, a 2D study te{kasper1} has shown an important variation of the thresholds with Pr. The considered model consists of a vertical cylindrical liquid bridge, between two isothermal parallel concentric rigid disks, %of radius Rwhich are separated by a distance H and presenting a non-deformable free surface. This surface is submitted to a steady heating flux symmetrical about the horizontal mid-plane. The parameters of the model are the Prandtl number, the Marangoni number (Ma) which characterises the thermal convective regime and the aspect ratio A=H/2R fixed here to 1. Gravity is absent. The capillary convective flow is governed by the Navier-Stokes and energy equations associated to boundary conditions which include the source of the flow. The mathematical system is solved with a spectral collocation code using a projection-diffusion method te{Batoul_94a} in order to uncouple the pressure and velocity fields. The steady flows are calculated with a Newton method, the first unstable eigenmodes using an Arnoldi method te{chenier-Stability}. These tools, in addition to direct numerical simulation, are necessary to observe transitions related to the mid-plane symmetry breaking of the 2D flow te{chenier-mult}, due to the low values of the growth rates of the instabilities. The sensitivity of the solutions to the treatment of a vorticity singularity at the junction free surface/solid boundaries was studied in te{kasper4}. An first analysis of the most sensitive regions of the flow to local thermal perturbations with the adjoint technique has been initiated te{Bouizi}. In the present contribution, we study the perturbation of the 2-D axisymmetric steady state through azimuthal modes as a function of the Prandtl and Marangoni number values. We will show that the critical Marangoni values are lower for 3D than for 2D perturbations for all Prandtl numbers but the azimutal Fourier modes, the bifurcation types and the threshold Ma_c values highly depend on the Prandtl number.

Advantages of a Special Post-Growth THM Program for the Reduction of Inclusions in CdTe Crystals

NASA Astrophysics Data System (ADS)

Fochuk, P.; Zakharuk, Z.; Nykonyuk, Ye.; Rarenko, A.; Kolesnik, M.; Bolotnikov, A. E.; Yang, G.; James, R. B.

2016-06-01

CdTe crystals are used widely for manufacturing gamma-ray radiation sensors, and we can improve their properties if we eliminate as many as possible of their Te inclusions. In this paper, we describe our two modes of removing them; first, we used the traveling heater method for growing them, and then we applied post-growth cooling, for which we used a special slow-cooling program. Here, we placed the CdTe ingot, containing inclusions, into a quartz container, and moved a narrow heater zone along it. The molten inclusions moved together with the hot zone, and, at end of the process, they were concentrated heavily at the ingot's surface. Consequently, very few inclusions were observed in much of the CdTe ingot. Hall effect measurements showed that after such annealing the value of the carrier mobility was increased significantly, and the concentration of ionized centers was reduced. One major advantage of this treatment, compared to thermal annealing alone, is that both the inclusions and impurities are eliminated simultaneously.

Center for the Integration of Optical Computing

DTIC Science & Technology

1992-03-15

their photorefractive properties, calculating the possible interconnect capacities, and collaborating with industry( Brimrose Corp. and Hughes Research...cooperation with Hughes Research Laboratories and Brimrose Corporation we have proceeded with a basic study of CdTe, ZnTe, and the mixed crystals Cd

Transmission properties of one-dimensional ternary plasma photonic crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiveshwari, Laxmi; Awasthi, S. K.

2015-09-15

Omnidirectional photonic band gaps (PBGs) are found in one-dimensional ternary plasma photonic crystals (PPC) composed of single negative metamaterials. The band characteristics and transmission properties are investigated through the transfer matrix method. We show that the proposed structure can trap light in three-dimensional space due to the elimination of Brewster's angle transmission resonance allowing the existence of complete PBG. The results are discussed in terms of incident angle, layer thickness, dielectric constant of the dielectric material, and number of unit cells (N) for TE and TM polarizations. It is seen that PBG characteristics is apparent even in an N ≥ 2 system,more » which is weakly sensitive to the incident angle and completely insensitive to the polarization. Finite PPC could be used for multichannel transmission filter without introducing any defect in the geometry. We show that the locations of the multichannel transmission peaks are in the allowed band of the infinite structure. The structure can work as a single or multichannel filter by varying the number of unit cells. Binary PPC can also work as a polarization sensitive tunable filter.« less

Photochemical Water Splitting by Bismuth Chalcogenide Topological Insulators.

PubMed

Rajamathi, Catherine R; Gupta, Uttam; Pal, Koushik; Kumar, Nitesh; Yang, Hao; Sun, Yan; Shekhar, Chandra; Yan, Binghai; Parkin, Stuart; Waghmare, Umesh V; Felser, Claudia; Rao, C N R

2017-09-06

As one of the major areas of interest in catalysis revolves around 2D materials based on molybdenum sulfide, we have examined the catalytic properties of bismuth selenides and tellurides, which are among the first chalcogenides to be proven as topological insulators (TIs). We find significant photochemical H 2 evolution activity with these TIs as catalysts. H 2 evolution increases drastically in nanosheets of Bi 2 Te 3 compared to single crystals. First-principles calculations show that due to the topology, surface states participate and promote the hydrogen evolution. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Diffraction of three-colour radiation on an acoustic wave

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kotov, V M

We study acousto-optic Bragg diffraction of three-colour radiation having wavelengths of 488, 514 and 633 nm on a single acoustic wave propagating in a TeO{sub 2} crystal. A technique is developed that allows one to find diffraction regimes with a proportional change in the intensity of all radiations by varying the acoustic power. According to the technique, radiation with a maximum wavelength has to be in strict Bragg synchronism with the acoustic wave, while other radiations diffract during the synchronism detuning. The results obtained using this technique are experimentally confirmed. (diffraction of light)

Effect of rare-earth doping on the thermoelectric and electrical transport properties of the transition metal pentatelluride hafnium pentatelluride

NASA Astrophysics Data System (ADS)

Lowhorn, Nathan Dane

The transition metal pentatellurides HfTe5 and ZrTe5 have been observed to possess interesting electrical transport properties. High thermopower and low resistivity values result in high thermoelectric power factors. In addition, they possess anomalous transport behavior. The temperature dependence of the resistivity is semimetallic except for a large resistive peak as a function of temperature at around 75 K for HfTe5 and 145 K for ZrTe5. At a temperature corresponding to this peak, the thermopower crosses zero as it moves from large positive values to large negative values. This behavior has been found to be extremely sensitive to changes in the energetics of the system through influences such as magnetic field, stress, pressure, microwave radiation, and substitutional doping. This behavior has yet to be fully explained. Previous doping studies have shown profound and varied effects on the anomalous transport behavior. In this study we investigate the effect on the electrical resistivity, thermopower, and magnetoresistance of doping HfTe5 with rare-earth elements. We have grown single crystals of nominal Hf0.75RE 0.25Te5 where RE = Ce, Pr, Nd, Sm, Gd, Tb, Dy, and Ho. Electrical resistivity and thermopower data from about 10 K to room temperature are presented and discussed in terms of the thermoelectric properties. Doping with rare-earth elements of increasing atomic number leads to a systematic suppression of the anomalous transport behavior. Rare-earth doping also leads to an enhancement of the thermoelectric power factor over that of previously studied pentatellurides and the commonly used thermoelectric material Bi2Te3. For nominal Hf0.75Nd0.25Te5 and Hf0.75 Sm0.25Te5, values more than a factor of 2 larger than that Bi2Te3 are observed. In addition, suppression of the anomalous transport behavior leads to a suppression of the large magnetoresistive effect observed in the parent compounds. Rare-earth doping of HfTe5 has a profound impact on the anomalous electrical transport properties of the parent pentatellurides and produces enhanced thermoelectric properties.

The structural phases and vibrational properties of Mo1-xWxTe2 alloys

NASA Astrophysics Data System (ADS)

Oliver, Sean M.; Beams, Ryan; Krylyuk, Sergiy; Kalish, Irina; Singh, Arunima K.; Bruma, Alina; Tavazza, Francesca; Joshi, Jaydeep; Stone, Iris R.; Stranick, Stephan J.; Davydov, Albert V.; Vora, Patrick M.

2017-12-01

The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe2 crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T‧ semimetallic phase at high temperatures. Alloying MoTe2 with WTe2 reduces the energy barrier between these two phases, while also allowing access to the T d Weyl semimetal phase. The \\text{M}{{\\text{o}}1-\\text{x}} WxTe2 alloy system is therefore promising for developing phase change memory technology. However, achieving this goal necessitates a detailed understanding of the phase composition in the MoTe2-WTe2 system. We combine polarization-resolved Raman spectroscopy with x-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) to study bulk \\text{M}{{\\text{o}}1-\\text{x}} WxTe2 alloys over the full compositional range x from 0 to 1. We identify Raman and XRD signatures characteristic of the 2H, 1T‧, and T d structural phases that agree with density-functional theory (DFT) calculations, and use them to identify phase fields in the MoTe2-WTe2 system, including single-phase 2H, 1T‧, and T d regions, as well as a two-phase 1T‧  +  T d region. Disorder arising from compositional fluctuations in \\text{M}{{\\text{o}}1-\\text{x}} WxTe2 alloys breaks inversion and translational symmetry, leading to the activation of an infrared 1T‧-MoTe2 mode and the enhancement of a double-resonance Raman process in \\text{2H-M}{{\\text{o}}1-\\text{x}} WxTe2 alloys. Compositional fluctuations limit the phonon correlation length, which we estimate by fitting the observed asymmetric Raman lineshapes with a phonon confinement model. These observations reveal the important role of disorder in \\text{M}{{\\text{o}}1-\\text{x}} WxTe2 alloys, clarify the structural phase boundaries, and provide a foundation for future explorations of phase transitions and electronic phenomena in this system.

Thermodynamics of post-growth annealing of cadmium zinc telluride nuclear radiation detectors

NASA Astrophysics Data System (ADS)

Adams, Aaron Lee

Nuclear Radiation Detectors are used for detecting, tracking, and identifying radioactive materials which emit high-energy gamma and X-rays. The use of Cadmium Zinc Telluride (CdZnTe) detectors is particularly attractive because of the detector's ability to operate at room temperature and measure the energy spectra of gamma-ray sources with a high resolution, typically less than 1% at 662 keV. While CdZnTe detectors are acceptable imperfections in the crystals limit their full market potential. One of the major imperfections are Tellurium inclusions generated during the crystal growth process by the retrograde solubility of Tellurium and Tellurium-rich melt trapped at the growth interface. Tellurium inclusions trap charge carriers generated by gamma and X-ray photons and thus reduce the portion of generated charge carriers that reach the electrodes for collection and conversion into a readable signal which is representative of the ionizing radiation's energy and intensity. One approach in resolving this problem is post-growth annealing which has the potential of removing the Tellurium inclusions and associated impurities. The goal of this project is to use experimental techniques to study the thermodynamics of Tellurium inclusion migration in post-growth annealing of CdZnTe nuclear detectors with the temperature gradient zone migration (TGZM) technique. Systematic experiments will be carried out to provide adequate thermodynamic data that will inform the engineering community of the optimum annealing parameters. Additionally, multivariable correlations that involve the Tellurium diffusion coefficient, annealing parameters, and CdZnTe properties will be analyzed. The experimental approach will involve systematic annealing experiments (in Cd vapor overpressure) on different sizes of CdZnTe crystals at varying temperature gradients ranging from 0 to 60°C/mm (used to migrate the Tellurium inclusion to one side of the crystal), and at annealing temperatures ranging from 500 to 800°C. The characterization techniques that will be used to quantify the effects of the post-growth annealing experiments include: 1) 3D infrared transmission microscopy to measure the size, distribution, and concentration of Tellurium inclusions; 2) current-voltage measurements to determine the effect of post-growth annealing on the resistivity of CdZnTe crystals; and 3) X-ray diffraction topography, available at the National Synchrotron Light Source (NSLS) facilities at Brookhaven National Laboratory (BNL), to measure the correlation between device performance and annealing conditions

Dispersion interactions between neighboring Bi atoms in (BiH3 )2 and Te(BiR2 )2.

PubMed

Haack, Rebekka; Schulz, Stephan; Jansen, Georg

2018-03-13

Triggered by the observation of a short Bi⋯Bi distance and a BiTeBi bond angle of only 86.6° in the crystal structure of bis(diethylbismuthanyl)tellurane quantum chemical computations on interactions between neighboring Bi atoms in Te(BiR 2 ) 2 molecules (R = H, Me, Et) and in (BiH 3 ) 2 were undertaken. Bi⋯Bi distances atoms were found to significantly shorten upon inclusion of the d shells of the heavy metal atoms into the electron correlation treatment, and it was confirmed that interaction energies from spin component-scaled second-order Møller-Plesset theory (SCS-MP2) agree well with coupled-cluster singles and doubles theory including perturbative triples (CCSD(T)). Density functional theory-based symmetry-adapted perturbation theory (DFT-SAPT) was used to study the anisotropy of the interplay of dispersion attraction and steric repulsion between the Bi atoms. Finally, geometries and relative stabilities of syn-syn and syn-anti conformers of Te(BiR 2 ) 2 (R = H, Me, Et) and interconversion barriers between them were computed. © 2018 Wiley Periodicals, Inc. © 2018 Wiley Periodicals, Inc.

Unexpected (π , π) order in Fe1.1Te

NASA Astrophysics Data System (ADS)

Fobes, David; Zaliznyak, Igor; Xu, Zhijun; Gu, Genda; Tranquada, John M.; Singh, Deepak

2013-03-01

We have studied the evolution of the magnetic and crystal structure in single crystalline Fe1.1Te, an iron-rich parent of the chalcogenide superconductor family. While a structural transition to a monoclinic symmetry occurs at ~ 60 K, magnetic peaks at 2 π . (0 . 48 , 0) only arise below TN ~ 58 K, and can be understood as bicollinear magnetism with discommensuration defects. [2] Unexpectedly, we have also observed resolution limited peaks at approximately (π , π) , arising at the same temperature TN, and exhibiting temperature hysteresis similar to that seen in magnetic susceptibility, perhaps indicating that these peaks are of magnetic origin. Additionally, the position of these peaks is nearly the same as in the parent compounds of the iron pnictide family of superconductors, where magnetic order is simple collinear commensurate antiferromagnetism. The origin of these new peaks near (π , π) and their relationship to the dominant bicollinear magnetic order observed in Fe1.1Te presents a puzzle. Work at BNL supported by Office of Basic Energy Sciences, US DOE, under Contract No. DE-AC02-98CH10886. We acknowledge the support of NIST, US Department of Commerce, in providing the neutron research facilities used in this work.

Crystal collimator systems for high energy frontier

NASA Astrophysics Data System (ADS)

Sytov, A. I.; Tikhomirov, V. V.; Lobko, A. S.

2017-07-01

Crystalline collimators can potentially considerably improve the cleaning performance of the presently used collimator systems using amorphous collimators. A crystal-based collimation scheme which relies on the channeling particle deflection in bent crystals has been proposed and extensively studied both theoretically and experimentally. However, since the efficiency of particle capture into the channeling regime does not exceed ninety percent, this collimation scheme partly suffers from the same leakage problems as the schemes using amorphous collimators. To improve further the cleaning efficiency of the crystal-based collimation system to meet the requirements of the FCC, we suggest here a double crystal-based collimation scheme, to which the second crystal is introduced to enhance the deflection of the particles escaping the capture to the channeling regime in its first crystal. The application of the effect of multiple volume reflection in one bent crystal and of the same in a sequence of crystals is simulated and compared for different crystal numbers and materials at the energy of 50 TeV. To enhance also the efficiency of use of the first crystal of the suggested double crystal-based scheme, we propose: the method of increase of the probability of particle capture into the channeling regime at the first crystal passage by means of fabrication of a crystal cut and the method of the amplification of nonchanneled particle deflection through the multiple volume reflection in one bent crystal, accompanying the particle channeling by a skew plane. We simulate both of these methods for the 50 TeV FCC energy.

Accuracy of existing atomic potentials for the CdTe semiconductor compound

NASA Astrophysics Data System (ADS)

Ward, D. K.; Zhou, X. W.; Wong, B. M.; Doty, F. P.; Zimmerman, J. A.

2011-06-01

CdTe and CdTe-based Cd1-xZnxTe (CZT) alloys are important semiconductor compounds that are used in a variety of technologies including solar cells, radiation detectors, and medical imaging devices. Performance of such systems, however, is limited due to the propensity of nano- and micro-scale defects that form during crystal growth and manufacturing processes. Molecular dynamics simulations offer an effective approach to study the formation and interaction of atomic scale defects in these crystals, and provide insight on how to minimize their concentrations. The success of such a modeling effort relies on the accuracy and transferability of the underlying interatomic potential used in simulations. Such a potential must not only predict a correct trend of structures and energies of a variety of elemental and compound lattices, defects, and surfaces but also capture correct melting behavior and should be capable of simulating crystalline growth during vapor deposition as these processes sample a variety of local configurations. In this paper, we perform a detailed evaluation of the performance of two literature potentials for CdTe, one having the Stillinger-Weber form and the other possessing the Tersoff form. We examine simulations of structures and the corresponding energies of a variety of elemental and compound lattices, defects, and surfaces compared to those obtained from ab initio calculations and experiments. We also perform melting temperature calculations and vapor deposition simulations. Our calculations show that the Stillinger-Weber parameterization produces the correct lowest energy structure. This potential, however, is not sufficiently transferrable for defect studies. Origins of the problems of these potentials are discussed and insights leading to the development of a more transferrable potential suitable for molecular dynamics simulations of defects in CdTe crystals are provided.

Synthesis and Screening of Phase Change Chalcogenide Thin Film Materials for Data Storage.

PubMed

Guerin, Samuel; Hayden, Brian; Hewak, Daniel W; Vian, Chris

2017-07-10

A combinatorial synthetic methodology based on evaporation sources under an ultrahigh vacuum has been used to directly synthesize compositional gradient thin film libraries of the amorphous phases of GeSbTe alloys at room temperature over a wide compositional range. An optical screen is described that allows rapid parallel mapping of the amorphous-to-crystalline phase transition temperature and optical contrast associated with the phase change on such libraries. The results are shown to be consistent with the literature for compositions where published data are available along the Sb 2 Te 3 -GeTe tie line. The results reveal a minimum in the crystallization temperature along the Sb 2 Te 3 -Ge 2 Te 3 tie line, and the method is able to resolve subsequent cubic-to-hexagonal phase transitions in the GST crystalline phase. HT-XRD has been used to map the phases at sequentially higher temperatures, and the results are reconciled with the literature and trends in crystallization temperatures. The results clearly delineate compositions that crystallize to pure GST phases and those that cocrystallize Te. High-throughput measurement of the resistivity of the amorphous and crystalline phases has allowed the compositional and structural correlation of the resistivity contrast associated with the amorphous-to-crystalline transition, which range from 5-to-8 orders of magnitude for the compositions investigated. The results are discussed in terms of the compromises in the selection of these materials for phase change memory applications and the potential for further exploration through more detailed secondary screening of doped GST or similar classes of phase change materials designed for the demands of future memory devices.

CdZnTe substrate impurities and their effects on liquid phase epitaxy HgCdTe

NASA Astrophysics Data System (ADS)

Tower, J. P.; Tobin, S. P.; Kestigian, M.; Norton, P. W.; Bollong, A. B.; Schaake, H. F.; Ard, C. K.

1995-05-01

Impurity levels were tracked through the stages of substrate and liquid phase epitaxy (LPE) layer processing to identify sources of elements which degrade infrared photodetector performance. Chemical analysis by glow discharge mass spectrometry and Zeeman corrected graphite furnace atomic absorption effectively showed the levels of impurities introduced into CdZnTe substrate material from the raw materials and the crystal growth processes. A new purification process (in situ distillation zone refining) for raw materials was developed, resulting in improved CdZnTe substrate purity. Substrate copper contamination was found to degrade the LPE layer and device electrical properties, in the case of lightly doped HgCdTe. Anomalous HgCdTe carrier type conversion was correlated to certain CdZnTe and CdTe substrate ingots.

Infrared studies of topological insulator systems

NASA Astrophysics Data System (ADS)

Post, Kirk; Chapler, Brian; Schafgans, Alex; Liu, Mengkun; Wu, Jih-Sheng; Richardella, Anthony; Lee, Joon Sue; Reijnders, Anjan; Lee, Yun Sang; He, Liang; Kou, Xufeng; Novak, Mario; Taskin, Alexey; Segawa, Kouji; Goldflam, Michael; Stinson, H. Theodore; Qi, Xiao Liang; Burch, Kenneth; Wang, Kang; Fogler, Michael; Samarth, Nitin; Ando, Yoichi; Basov, Dimitri

The theoretical prediction, and subsequent experimental realization, of topological insulator (TI) systems, has vaulted this new class of materials to the vanguard of condensed matter physics. Since their discovery, we have carried out a number of infrared studies on various TI systems, including Bi2Se3, Bi1-xSbx, and Bi2-xSbxTe3-ySey crystals as well as Bi2Se3 and (Bi,Sb)2Te3 thin films. A key element of these works is the revelation that the infrared response of Bi1-xSbx crystals and (Bi,Sb)2Te3 thin films possess a significant, or even dominant, component from the topologically protected surface states. I will review these works and discuss future prospects of measuring the surface state response through optical spectroscopy techniques

Rashba effect in single-layer antimony telluroiodide SbTeI

DOE PAGES

Zhuang, Houlong L.; Cooper, Valentino R.; Xu, Haixuan; ...

2015-09-04

Exploring spin-orbit coupling (SOC) in single-layer materials is important for potential spintronics applications. In this paper, using first-principles calculations, we show that single-layer antimony telluroiodide SbTeI behaves as a two-dimensional semiconductor exhibiting a G 0W 0 band gap of 1.82 eV. More importantly, we observe the Rashba spin splitting in the SOC band structure of single-layer SbTeI with a sizable Rashba coupling parameter of 1.39 eV Å, which is significantly larger than that of a number of two-dimensional systems including surfaces and interfaces. The low formation energy and real phonon modes of single-layer SbTeI imply that it is stable. Finally,more » our study suggests that single-layer SbTeI is a candidate single-layer material for applications in spintronics devices.« less

Solidification and crystal growth of solid solution semiconducting alloys

NASA Technical Reports Server (NTRS)

Lehoczky, S. L.; Szofran, F. R.

1984-01-01

Problems associated with the solidification and crytal growth of solid-solution semiconducting alloy crystals in a terrestrial environment are described. A detailed description is given of the results for the growth of mercury cadmium telluride (HgCdTe) alloy crystals by directional solidification, because of their considerable technological importance. A series of HgCdTe alloy crystals are grown from pseudobinary melts by a vertical Bridgman method using a wide range of growth rates and thermal conditions. Precision measurements are performed to establish compositional profiles for the crystals. The compositional variations are related to compositional variations in the melts that can result from two-dimensional diffusion or density gradient driven flow effects ahead of the growth interface. These effects are discussed in terms of the alloy phase equilibrium properties, the recent high temperature thermophysical data for the alloys and the highly unusual heat transfer characteristics of the alloy/ampule/furnace system that may readily lead to double diffusive convective flows in a gravitational environment.

Structure of Profiled Crystals Based on Solid Solutions of Bi2Te3 and Their X-Ray Diagnostics

NASA Astrophysics Data System (ADS)

Voronin, A. I.; Bublik, V. T.; Tabachkova, N. Yu.; Belov, Yu. M.

2011-05-01

In this work, we used x-ray structural diagnostic data to reveal the formation of structural regularities in profiled polycrystalline ingots based on Bi and Sb chalcogenide solid solutions. In Bi2Te3 lattice crystals, the solid phase grows such that the cleavage surfaces are perpendicular to the crystallization front. The crystallization singularity determines the nature of the growth texture. Because texture is an important factor determining the anisotropy of properties, which in turn determines the suitability of an ingot for production of modules and the possibility of figure of merit improvement, its diagnostics is an important issue for technology testing. Examples of texture analysis using the method of straight pole figure (SPF) construction for profiled crystals are provided. The structure of the surface layers in the profiled ingots was studied after electroerosion cutting. In addition, the method of estimation of the disturbed layer depth based on the nature of texture changes was used.

Resolving glass transition in Te-based phase-change materials by modulated differential scanning calorimetry

NASA Astrophysics Data System (ADS)

Chen, Yimin; Mu, Sen; Wang, Guoxiang; Shen, Xiang; Wang, Junqiang; Dai, Shixun; Xu, Tiefeng; Nie, Qiuhua; Wang, Rongping

2017-10-01

Glass transitions of Te-based phase-change materials (PCMs) were studied by modulated differential scanning calorimetry. It was found that both Ge2Sb2Te5 and GeTe are marginal glass formers with ΔT (= T x - T g) less than 2.1 °C when the heating rate is below 3 °C min-1. The fragilities of Ge2Sb2Te5 and GeTe can be estimated as 46.0 and 39.7, respectively, around the glass transition temperature, implying that a fragile-to-strong transition would be presented in such Te-based PCMs. The above results provide direct experimental evidence to support the investigation of crystallization kinetics in supercooled liquid PCMs.

A new oxytelluride: Perovskite and CsCl intergrowth in Ba 3Yb 2O 5Te

DOE PAGES

Whalen, J. B.; Besara, T.; Vasquez, R.; ...

2013-04-27

The new oxytelluride Ba 3Yb 2O 5Te was obtained from an alkaline earth flux. Ba3Yb2O5Te crystallizes in the tetragonal space group P4/ mmm (#123), with a=4.3615(3) Å and c=11.7596(11) angstrom, Z=1. The structure combines two distinct building blocks, a Ba 2Yb 2O 5 perovskite-like double layer with square bipyramidal coordination of the ytterbium ions, and a CsCl-type BaTe layer. Short range magnetic order is apparent at below 5 K, with the magnetic behavior above this temperature dominated by crystal field effects. The structure may be considered as an analog to the Ruddlesden-Popper phases, where the NaCl-type layer has been replacedmore » by the CsCl-type layer. Finally, the two-dimensional magnetic behavior is expected based on the highly anisotropic nature of the structure.« less

Effects of sub-bandgap illumination on electrical properties and detector performances of CdZnTe:In

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Lingyan; Jie, Wanqi, E-mail: jwq@nwpu.edu.cn; Zha, Gangqiang, E-mail: zha-gq@hotmail.com

2014-06-09

The effects of sub-bandgap illumination on electrical properties of CdZnTe:In crystals and spectroscopic performances of the fabricated detectors were discussed. The excitation process of charge carriers through thermal and optical transitions at the deep trap could be described by the modified Shockley-Read-Hall model. The ionization probability of the deep donor shows an increase under illumination, which should be responsible for the variation of electrical properties within CdZnTe bulk materials with infrared (IR) irradiation. By applying Ohm's law, diffusion model and interfacial layer-thermionic-diffusion theory, we obtain the decrease of bulk resistivity and the increase of space charge density in the illuminatedmore » crystals. Moreover, the illumination induced ionization will further contribute to improving carrier transport property and charge collection efficiency. Consequently, the application of IR irradiation in the standard working environment is of great significance to improve the spectroscopic characteristics of CdZnTe radiation detectors.« less

Mechanisms of the passage of dark currents through Cd(Zn)Te semi-insulating crystals

NASA Astrophysics Data System (ADS)

Sklyarchuk, V.; Fochuk, P.; Rarenko, I.; Zakharuk, Z.; Sklyarchuk, O.; Nykoniuk, Ye.; Rybka, A.; Kutny, V.; Bolotnikov, A. E.; James, R. B.

2014-09-01

We investigated the passage of dark currents through semi-insulating crystals of Cd(Zn)Te with weak n-type conductivity that are used widely as detectors of ionizing radiation. The crystals were grown from a tellurium solution melt at 800 оС by the zone-melting method, in which a polycrystalline rod in a quartz ampoule was moved through a zone heater at a rate of 2 mm per day. The synthesis of the rod was carried out at ~1150 оС. We determined the important electro-physical parameters of this semiconductor, using techniques based on a parallel study of the temperature dependence of current-voltage characteristics in both the ohmic and the space-charge-limited current regions. We established in these crystals the relationship between the energy levels and the concentrations of deep-level impurity states, responsible for dark conductivity and their usefulness as detectors.

Low temperature thermoelectric properties of Bi2-xSbxTeSe2 crystals near the n-p crossover

NASA Astrophysics Data System (ADS)

Fuccillo, M. K.; Charles, M. E.; Hor, Y. S.; Jia, Shuang; Cava, R. J.

2012-07-01

Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi2-xSbxTeSe2 crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p-n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies.

Zeeman effect of the topological surface states revealed by quantum oscillations up to 91 Tesla

DOE PAGES

Zhang, Zuocheng; Wei, Wei; Yang, Fangyuan; ...

2015-12-01

In this paper, we report quantum oscillation studies on the Bi 2Te 3-xS x topological insulator single crystals in pulsed magnetic fields up to 91 T. For the x = 0.4 sample with the lowest bulk carrier density, the surface and bulk quantum oscillations can be disentangled by combined Shubnikov–de Haas and de Hass–van Alphen oscillations, as well as quantum oscillations in nanometer-thick peeled crystals. At high magnetic fields beyond the bulk quantum limit, our results suggest that the zeroth Landau level of topological surface states is shifted due to the Zeeman effect. The g factor of the topological surfacemore » states is estimated to be between 1.8 and 4.5. Lastly, these observations shed new light on the quantum transport phenomena of topological insulators in ultrahigh magnetic fields.« less

Synthesis and Physical Properties of the Oxofluoride Cu2(SeO3)F2.

PubMed

Mitoudi-Vagourdi, Eleni; Papawassiliou, Wassilios; Müllner, Silvia; Jaworski, Aleksander; Pell, Andrew J; Lemmens, Peter; Kremer, Reinhard K; Johnsson, Mats

2018-04-16

Single crystals of the new compound Cu 2 (SeO 3 )F 2 were successfully synthesized via a hydrothermal method, and the crystal structure was determined from single-crystal X-ray diffraction data. The compound crystallizes in the orthorhombic space group Pnma with the unit cell parameters a = 7.066(4) Å, b = 9.590(4) Å, and c = 5.563(3) Å. Cu 2 (SeO 3 )F 2 is isostructural with the previously described compounds Co 2 TeO 3 F 2 and CoSeO 3 F 2 . The crystal structure comprises a framework of corner- and edge-sharing distorted [CuO 3 F 3 ] octahedra, within which [SeO 3 ] trigonal pyramids are present in voids and are connected to [CuO 3 F 3 ] octahedra by corner sharing. The presence of a single local environment in both the 19 F and 77 Se solid-state MAS NMR spectra supports the hypothesis that O and F do not mix at the same crystallographic positions. Also the specific phonon modes observed with Raman scattering support the coordination around the cations. At high temperatures the magnetic susceptibility follows the Curie-Weiss law with Curie temperature of Θ = -173(2) K and an effective magnetic moment of μ eff ∼ 2.2 μ B . Antiferromagnetic ordering below ∼44 K is indicated by a peak in the magnetic susceptibility. A second though smaller peak at ∼16 K is tentatively ascribed to a magnetic reorientation transition. Both transitions are also confirmed by heat capacity measurements. Raman scattering experiments propose a structural phase instability in the temperature range 6-50 K based on phonon anomalies. Further changes in the Raman shift of modes at ∼46 K and ∼16 K arise from transitions of the magnetic lattice in accordance with the susceptibility and heat capacity measurements.

Synthesis, structure, and characterization of two new bismuth(III) selenite/tellurite nitrates: [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3})

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meng, Chang-Yu; Wei, Ming-Fang; Geng, Lei, E-mail: lgeng.cn@gmail.com

Two new bismuth(III) selenite/tellurite nitrates, [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3}), have been synthesized by conventional facile hydrothermal method at middle temperature 200 °C and characterized by single-crystal X-ray diffraction, powder diffraction, UV–vis–NIR optical absorption spectrum, infrared spectrum and thermal analylsis. Both [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO3)](NO3) crystallize in the monoclinic centronsymmetric space group P2{sub 1}/c with a=9.9403(4) Å, b=9.6857(4) Å, c=10.6864(5) Å, β=93.1150(10)° for [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and a=8.1489(3) Å, b=9.0663(4) Å, c=7.4729(3) Å, β=114.899(2)° for Bi(TeO3)(NO3), respectively. The two compounds, whose structures are composed of three different asymmetricmore » building units, exhibit two different types of structures. The structure of [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) features a three-dimensional (3D) bismuth(III) selenite cationic tunnel structure [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}] {sup 3}{sub ∞} with NO{sub 3}{sup −} anion group filling in the 1D tunnel along b axis. The structure of [Bi(TeO{sub 3})](NO{sub 3}) features 2D bismuth(III) tellurite [Bi(TeO{sub 3}){sub 2}]{sup 2}{sub ∞} layers separated by NO{sub 3}{sup −} anion groups. The results of optical diffuse-reflectance spectrum measurements and electronic structure calculations based on density functional theory methods show that the two compounds are wide band-gap semiconductors. - Graphical abstract: Two novel bismuth{sup III} selenite/tellurite nitrates [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) with 3D tunnel structure and [Bi(TeO{sub 3})](NO{sub 3}) with 2D layer structure have been firstly synthesized and characterized. Display Omitted - Highlights: • Two novel bismuth{sup III} nitrates [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3}) were firstly synthesized. • The two compounds were wide band-gap semiconductors.« less

Vanadium doped Sb{sub 2}Te{sub 3} material with modified crystallization mechanism for phase-change memory application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Xinglong; Zheng, Yonghui; Zhou, Wangyang

2015-06-15

In this paper, V{sub 0.21}Sb{sub 2}Te{sub 3} (VST) has been proposed for phase-change memory applications. With vanadium incorporating, VST has better thermal stability than Sb{sub 2}Te{sub 3} and can maintain in amorphous phase at room temperature. Two resistance steps were observed in temperature dependent resistance measurements. By real-time observing the temperature dependent lattice structure evolution, VST presents as a homogenous phase throughout the whole thermal process. Combining Hall measurement and transmission electron microscopy results, we can ascribe the two resistance steps to the unique crystallization mechanism of VST material. Then, the amorphous thermal stability enhancement can also be rooted inmore » the suppression of the fast growth crystallization mechanism. Furthermore, the applicability of VST is demonstrated by resistance-voltage measurement, and the phase transition of VST can be triggered by a 15 ns electric pulse. In addition, endurance up to 2.7×10{sup 4} cycles makes VST a promising candidate for phase-change memory applications.« less

Effect of Dielectric Material Films on Crystallization Characteristics of Ge2Sb2Te5 Phase-Change Memory Film

NASA Astrophysics Data System (ADS)

Nishiuchi, Kenichi; Yamada, Noboru; Kawahara, Katsumi; Kojima, Rie

2007-11-01

Reduction of the film thickness of phase-change film and the adoption of GeN- or ZrO2-based dielectric films are both effective in achieving good thermal stability in phase-change optical disks. It was experimentally confirmed that, at a heating rate of 10 °C/min, the crystallization temperature Tx of the Ge2Sb2Te5 amorphous film when sandwiched by ZnS-SiO2 films markedly increases from 162 to 197 °C, while the thickness of the Ge2Sb2Te5 film decreases from 10 to 3 nm. Tx also slightly increases when ZnS-SiO2 films are substituted for GeN-based films (from 162 to 165 °C) and ZrO2-based films (from 162 to 167 °C). At the same time, the activation energy of crystallization is 2.4 eV for both GeN- and ZrO2-based films, and is higher than 2.2 eV for ZnS-SiO2 films.

Enriched TeO 2 bolometers with active particle discrimination: Towards the CUPID experiment

DOE PAGES

Artusa, D. R.; Avignone, F. T.; Beeman, J. W.; ...

2017-04-01

We present the performances of two 92% enriched 130TeO2 crystals operated as thermal bolometers in view of a next generation experiment to search for neutrinoless double beta decay of 130Te. The crystals, 435 g each, show an energy resolution, evaluated at the 2615 keV γ-line of 208Tl, of 6.5 and 4.3 keV FWHM. The only observable internal radioactive contamination arises from 238U (15 and 8 μBq/kg, respectively). The internal activity of the most problematic nuclei for neutrinoless double beta decay, 226Ra and 228Th, are both evaluated as <3.1 μBq/kg for one crystal and <2.3 μBq/kg for the second. Thanks tomore » the readout of the weak Cherenkov light emitted by β/γ particles by means of Neganov–Luke bolometric light detectors we were able to perform an event-by-event identification of β/γ events with a 95% acceptance level, while establishing a rejection factor of 98.21% and 99.99% for α particles.« less

Effect of scanning velocity on femtosecond laser-induced periodic surface structures on HgCdTe crystal

NASA Astrophysics Data System (ADS)

Gu, Hongan; Dai, Ye; Wang, Haodong; Yan, Xiaona; Ma, Guohong

2017-12-01

In this paper, a femtosecond laser line-scanning irradiation was used to induce the periodic surface microstructure on HgCdTe crystal. Low spatial frequency laser induced periodic surface structures of 650-770 nm and high spatial frequency laser induced periodic surface structures of 152-246 nm were respectively found with different scanning speeds. The evolution process from low spatial frequency laser induced periodic surface structures to high spatial frequency laser induced periodic surface structures is characterized by scanning electron microscope. Their spatial periods deduced by using a two-dimensional Fourier transformation partly agree with the predictions of the Sipe-Drude theory. Confocal micro-Raman spectral show that the atomic arrangement of induced low spatial frequency laser-induced structures are basically consistent with the crystal in the central area of laser-scanning line, however a new peak at 164 cm-1 for the CdTe-like mode becomes evident due to the Hg vaporization when strong laser ablation happens. The obtained surface periodic ripples may have applications in fabricating advanced infrared detector.

Enriched TeO 2 bolometers with active particle discrimination: Towards the CUPID experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Artusa, D. R.; Avignone, F. T.; Beeman, J. W.

We present the performances of two 92% enriched 130TeO2 crystals operated as thermal bolometers in view of a next generation experiment to search for neutrinoless double beta decay of 130Te. The crystals, 435 g each, show an energy resolution, evaluated at the 2615 keV γ-line of 208Tl, of 6.5 and 4.3 keV FWHM. The only observable internal radioactive contamination arises from 238U (15 and 8 μBq/kg, respectively). The internal activity of the most problematic nuclei for neutrinoless double beta decay, 226Ra and 228Th, are both evaluated as <3.1 μBq/kg for one crystal and <2.3 μBq/kg for the second. Thanks tomore » the readout of the weak Cherenkov light emitted by β/γ particles by means of Neganov–Luke bolometric light detectors we were able to perform an event-by-event identification of β/γ events with a 95% acceptance level, while establishing a rejection factor of 98.21% and 99.99% for α particles.« less

Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

NASA Astrophysics Data System (ADS)

Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

2015-06-01

Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 μm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions.