X-ray analysis of temperature induced defect structures in boron implanted silicon

NASA Astrophysics Data System (ADS)

Sztucki, M.; Metzger, T. H.; Kegel, I.; Tilke, A.; Rouvière, J. L.; Lübbert, D.; Arthur, J.; Patel, J. R.

2002-10-01

We demonstrate the application of surface sensitive diffuse x-ray scattering under the condition of grazing incidence and exit angles to investigate growth and dissolution of near-surface defects after boron implantation in silicon(001) and annealing. Silicon wafers were implanted with a boron dose of 6×1015 ions/cm2 at 32 keV and went through different annealing treatments. From the diffuse intensity close to the (220) surface Bragg peak we reveal the nature and kinetic behavior of the implantation induced defects. Analyzing the q dependence of the diffuse scattering, we are able to distinguish between point defect clusters and extrinsic stacking faults on {111} planes. Characteristic for stacking faults are diffuse x-ray intensity streaks along <111> directions, which allow for the determination of their growth and dissolution kinetics. For the annealing conditions of our crystals, we conclude that the kinetics of growth can be described by an Ostwald ripening model in which smaller faults shrink at the expense of the larger stacking faults. The growth is found to be limited by the self-diffusion of silicon interstitials. After longer rapid thermal annealing the stacking faults disappear almost completely without shrinking, most likely by transformation into perfect loops via a dislocation reaction. This model is confirmed by complementary cross-sectional transmission electron microscopy.

Mapping Boron Dioxide (BO2) Light Emission During Ballistic Initiation of Boron

DTIC Science & Technology

2016-03-03

Dreizin; unreferenced). Essentially, 2 light sensors (cameras), each filtered over a narrow wavelength region, observe an event over the same line of...background incandescence (subtraction gave a qualitatively similar result). For imaging BO2 emission, the light sensors were 2 Phantom V7.3 monochrome...A check of the temperature measurement technique using emission from an acetylene/air diffusion flame gave reasonable results (1,800 K outer soot

Flat-plate solar array project process development area, process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1984-01-01

The program is designed to investigate the fabrication of solar cells on N-type base material by a simultaneous diffusion of N-type and P-type dopants to form an P(+)NN(+) structure. The results of simultaneous diffusion experiments are being compared to cells fabricated using sequential diffusion of dopants into N-base material in the same resistivity range. The process used for the fabrication of the simultaneously diffused P(+)NN(+) cells follows the standard Westinghouse baseline sequence for P-base material except that the two diffusion processes (boron and phosphorus) are replaced by a single diffusion step. All experiments are carried out on N-type dendritic web grown in the Westinghouse pre-pilot facility. The resistivities vary from 0.5 (UC OMEGA)cm to 5 (UC OMEGA)cm. The dopant sources used for both the simultaneous and sequential diffusion experiments are commercial metallorganic solutions with phosphorus or boron components. After these liquids are applied to the web surface, they are baked to form a hard glass which acts as a diffusion source at elevated temperatures. In experiments performed thus far, cells produced in sequential diffusion tests have properties essentially equal to the baseline N(+)PP(+) cells. However, the simultaneous diffusions have produced cells with much lower IV characteristics mainly due to cross-doping of the sources at the diffusion temperature. This cross-doping is due to the high vapor pressure phosphorus (applied as a metallorganic to the back surface) diffusion through the SiO2 mask and then acting as a diffusant source for the front surface.

Calculation of the fractional interstitial component of boron diffusion and segregation coefficient of boron in Si0.8Ge0.2

NASA Astrophysics Data System (ADS)

Fang, Tilden T.; Fang, Wingra T. C.; Griffin, Peter B.; Plummer, James D.

1996-02-01

Investigation of boron diffusion in strained silicon germanium buried layers reveals a fractional interstitial component of boron diffusion (fBI) in Se0.8Ge0.2 approximately equal to the fBI value in silicon. In conjunction with computer-simulated boron profiles, the results yield an absolute lower-bound of fBI in Si0.8Ge0.2 of ˜0.8. In addition, the experimental methodology provides a unique vehicle for measuring the segregation coefficient; oxidation-enhanced diffusion is used instead of an extended, inert anneal to rapidly diffuse the dopant to equilibrium levels across the interface, allowing the segregation coefficient to be measured more quickly.

Model Implementation of Boron Removal Using CaCl2-CaO-SiO2 Slag System for Solar-Grade Silicon

NASA Astrophysics Data System (ADS)

Chen, Hui; Wang, Ye; Zheng, Wenjia; Li, Qincan; Yuan, Xizhi; Morita, Kazuki

2017-12-01

A new CaCl2-CaO-SiO2 slag system was recently proposed to remove boron from metallurgy-grade silicon by oxidized chlorination and evaporation. To further investigate the boron transformation process at a high temperature, a model implementation to present the transfer of boron from molten silicon to the gas phase via slag is introduced. Heat transfer, fluid flow, the chemical reactions at the interface and surface, the mass transfer and diffusion of boron in the molten silicon and slag, and the evaporation of BOCl and CaCl2 were coupled in this model. After the confirmation of the thermal field, other critical parameters, including the boron partition ratios ( L B) for this slag from 1723 K to 1823 K (1450 °C to 1550 °C), the thicknesses of the velocity boundary layer at the surface and interface, the mass transfer coefficients of the boundary layer at the surface and interface, and partial pressure of BOCl in the gas phase were analyzed to determine the rate-limiting step. To verify this model implementation, boron removal experiments were carried out at various temperatures and with various initial mass ratios of slag to silicon ( μ). The evaporation rate of CaCl2 was also measured by thermogravimetry analysis (TGA).

Microplasma Processed Ultrathin Boron Nitride Nanosheets for Polymer Nanocomposites with Enhanced Thermal Transport Performance.

PubMed

Zhang, Ri-Chao; Sun, Dan; Lu, Ai; Askari, Sadegh; Macias-Montero, Manuel; Joseph, Paul; Dixon, Dorian; Ostrikov, Kostya; Maguire, Paul; Mariotti, Davide

2016-06-01

This Research Article reports on the enhancement of the thermal transport properties of nanocomposite materials containing hexagonal boron nitride in poly(vinyl alcohol) through room-temperature atmospheric pressure direct-current microplasma processing. Results show that the microplasma treatment leads to exfoliation of the hexagonal boron nitride in isopropyl alcohol, reducing the number of stacks from >30 to a few or single layers. The thermal diffusivity of the resulting nanocomposites reaches 8.5 mm(2) s(-1), 50 times greater than blank poly(vinyl alcohol) and twice that of nanocomposites containing nonplasma treated boron nitride nanosheets. From TEM analysis, we observe much less aggregation of the nanosheets after plasma processing along with indications of an amorphous carbon interfacial layer, which may contribute to stable dispersion of boron nitride nanosheets in the resulting plasma treated colloids.

Two-dimensional numerical simulation of boron diffusion for pyramidally textured silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Fa-Jun, E-mail: Fajun.Ma@nus.edu.sg; Duttagupta, Shubham; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576

2014-11-14

Multidimensional numerical simulation of boron diffusion is of great relevance for the improvement of industrial n-type crystalline silicon wafer solar cells. However, surface passivation of boron diffused area is typically studied in one dimension on planar lifetime samples. This approach neglects the effects of the solar cell pyramidal texture on the boron doping process and resulting doping profile. In this work, we present a theoretical study using a two-dimensional surface morphology for pyramidally textured samples. The boron diffusivity and segregation coefficient between oxide and silicon in simulation are determined by reproducing measured one-dimensional boron depth profiles prepared using different boronmore » diffusion recipes on planar samples. The established parameters are subsequently used to simulate the boron diffusion process on textured samples. The simulated junction depth is found to agree quantitatively well with electron beam induced current measurements. Finally, chemical passivation on planar and textured samples is compared in device simulation. Particularly, a two-dimensional approach is adopted for textured samples to evaluate chemical passivation. The intrinsic emitter saturation current density, which is only related to Auger and radiative recombination, is also simulated for both planar and textured samples. The differences between planar and textured samples are discussed.« less

Effect of mechanical activation on jell boronizing treatment of the AISI 4140

NASA Astrophysics Data System (ADS)

Yılmaz, S. O.; Karataş, S.

2013-06-01

The article presents the effect of mechanical activation on the growth kinetics of boride layer of boronized AISI 4140 steel. The samples were boronized by ferroboron + (SiO2-Na2O) powders for 873-1173 K temperature and 2, 4, 6 and 8 h times, respectively. The morphology and types of borides formed on the surface of AISI 4140 steel substrate were analyzed. Layer growth kinetics were analyzed by measuring the extent of penetration of FeB and Fe2B sublayers as function of treatment time and temperature in the range of 873-1173 K. High diffusivity was obtained by creating a large number of defects through mechanical activation in the form of nanometer sized crystalline particles through the repeated fracturing and cold-welding of the powder particles, and a depth of 100 μm was found in the specimen borided by the 2 h MA powders, for 4 h and 1073 K, where 2000-2350 HV were measured. Consequently, the application conditions of boronizing were improved by usage of mechanical activation. The preferred Fe2B boride without FeB could be formed in the boride layer under 973 K boronizing temperature by mechanically activated by ferroboron + sodium silicate powder mixture due to the decrease of the activation energy.

Study of shallow junction formation by boron-containing cluster ion implantation of silicon and two-stage annealing

NASA Astrophysics Data System (ADS)

Lu, Xin-Ming

Shallow junction formation made by low energy ion implantation and rapid thermal annealing is facing a major challenge for ULSI (ultra large scale integration) as the line width decreases down to the sub micrometer region. The issues include low beam current, the channeling effect in low energy ion implantation and TED (transient enhanced diffusion) during annealing after ion implantation. In this work, boron containing small cluster ions, such as GeB, SiB and SiB2, was generated by using the SNICS (source of negative ion by cesium sputtering) ion source to implant into Si substrates to form shallow junctions. The use of boron containing cluster ions effectively reduces the boron energy while keeping the energy of the cluster ion beam at a high level. At the same time, it reduces the channeling effect due to amorphization by co-implanted heavy atoms like Ge and Si. Cluster ions have been used to produce 0.65--2keV boron for low energy ion implantation. Two stage annealing, which is a combination of low temperature (550°C) preannealing and high temperature annealing (1000°C), was carried out to anneal the Si sample implanted by GeB, SiBn clusters. The key concept of two-step annealing, that is, the separation of crystal regrowth, point defects removal with dopant activation from dopant diffusion, is discussed in detail. The advantages of the two stage annealing include better lattice structure, better dopant activation and retarded boron diffusion. The junction depth of the two stage annealed GeB sample was only half that of the one-step annealed sample, indicating that TED was suppressed by two stage annealing. Junction depths as small as 30 nm have been achieved by two stage annealing of sample implanted with 5 x 10-4/cm2 of 5 keV GeB at 1000°C for 1 second. The samples were evaluated by SIMS (secondary ion mass spectrometry) profiling, TEM (transmission electron microscopy) and RBS (Rutherford Backscattering Spectrometry)/channeling. Cluster ion implantation in combination with two-step annealing is effective in fabricating ultra-shallow junctions.

An experimental study of solid source diffusion by spin on dopants and its application for minimal silicon-on-insulator CMOS fabrication

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Koga, Kazuhiro; Khumpuang, Sommawan; Nagao, Masayoshi; Matsukawa, Takashi; Hara, Shiro

2017-06-01

Solid source diffusions of phosphorus (P) and boron (B) into the half-inch (12.5 mm) minimal silicon (Si) wafers by spin on dopants (SOD) have been systematically investigated and the physical-vapor-deposited (PVD) titanium nitride (TiN) metal gate minimal silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) have successfully been fabricated using the developed SOD thermal diffusion technique. It was experimentally confirmed that a low temperature oxidation (LTO) process which depresses a boron silicide layer formation is effective way to remove boron-glass in a diluted hydrofluoric acid (DHF) solution. It was also found that top Si layer thickness of SOI wafers is reduced in the SOD thermal diffusion process because of its consumption by thermal oxidation owing to the oxygen atoms included in SOD films, which should be carefully considered in the ultrathin SOI device fabrication. Moreover, normal operations of the fabricated minimal PVD-TiN metal gate SOI-CMOS inverters, static random access memory (SRAM) cells and ring oscillators have been demonstrated. These circuit level results indicate that no remarkable particles and interface traps were introduced onto the minimal wafers during the device fabrication, and the developed solid source diffusion by SOD is useful for the fabrication of functional logic gate minimal SOI-CMOS integrated circuits.

Investigation of the Phase Formation of AlSi-Coatings for Hot Stamping of Boron Alloyed Steel

NASA Astrophysics Data System (ADS)

Veit, R.; Hofmann, H.; Kolleck, R.; Sikora, S.

2011-01-01

Hot stamping of boron alloyed steel is gaining more and more importance for the production of high strength automotive body parts. Within hot stamping of quenchenable steels the blank is heated up to austenitization temperature, transferred to the tool, formed rapidly and quenched in the cooled tool. To avoid scale formation during the heating process of the blank, the sheet metal can be coated with an aluminium-silicum alloy. The meltimg temperature of this coating is below the austenitization temperature of the base material. This means, that a diffusion process between base material and coating has to take place during heating, leading to a higher melting temperature of the coating. In conventional heating devices, like roller hearth furnaces, the diffusion process is reached by relatively low heating rates. New technologies, like induction heating, reach very high heating rates and offer great potentials for the application in hot stamping. Till now it is not proofed, that this technology can be used with aluminum-silicon coated materials. This paper will present the results of comparative heating tests with a conventional furnace and an induction heating device. For different time/temperature-conditions the phase formation within the coating will be described.

Kinetic Monte Carlo (kMC) simulation of carbon co-implant on pre-amorphization process.

PubMed

Park, Soonyeol; Cho, Bumgoo; Yang, Seungsu; Won, Taeyoung

2010-05-01

We report our kinetic Monte Carlo (kMC) study of the effect of carbon co-implant on the pre-amorphization implant (PAL) process. We employed BCA (Binary Collision Approximation) approach for the acquisition of the initial as-implant dopant profile and kMC method for the simulation of diffusion process during the annealing process. The simulation results implied that carbon co-implant suppresses the boron diffusion due to the recombination with interstitials. Also, we could compare the boron diffusion with carbon diffusion by calculating carbon reaction with interstitial. And we can find that boron diffusion is affected from the carbon co-implant energy by enhancing the trapping of interstitial between boron and interstitial.

Mechanical characteristics of heterogeneous structures obtained by high-temperature brazing of corrosion-resistant steels with rapidly quenched non-boron nickel-based alloys

NASA Astrophysics Data System (ADS)

Kalin, B.; Penyaz, M.; Ivannikov, A.; Sevryukov, O.; Bachurina, D.; Fedotov, I.; Voennov, A.; Abramov, E.

2018-01-01

Recently, the use rapidly quenched boron-containing nickel filler metals for high temperature brazing corrosion resistance steels different classes is perspective. The use of these alloys leads to the formation of a complex heterogeneous structure in the diffusion zone that contains separations of intermediate phases such as silicides and borides. This structure negatively affects the strength characteristics of the joint, especially under dynamic loads and in corrosive environment. The use of non-boron filler metals based on the Ni-Si-Be system is proposed to eliminate this structure in the brazed seam. Widely used austenitic 12Cr18Ni10Ti and ferrite-martensitic 16Cr12MoSiWNiVNb reactor steels were selected for research and brazing was carried out. The mechanical characteristics of brazed joints were determined using uniaxial tensile and impact toughness tests, and fractography was investigated by electron microscopy.

Ultrathin, wafer-scale hexagonal boron nitride on dielectric surfaces by diffusion and segregation mechanism

NASA Astrophysics Data System (ADS)

Sonde, Sushant; Dolocan, Andrei; Lu, Ning; Corbet, Chris; Kim, Moon J.; Tutuc, Emanuel; Banerjee, Sanjay K.; Colombo, Luigi

2017-06-01

Chemical vapor deposition (CVD) of two-dimensional (2D) hexagonal boron nitride (h-BN) is at the center of numerous studies for its applications in novel electronic devices. However, a clear understanding of the growth mechanism is lacking for its wider industrial adoption on technologically relevant substrates such as SiO2. Here, we demonstrate a controllable growth method of thin, wafer scale h-BN films on arbitrary substrates. We also clarify the growth mechanism to be diffusion and surface segregation (D-SS) of boron (B) and nitrogen (N) in Ni and Co thin films on SiO2/Si substrates after exposure to diborane and ammonia precursors at high temperature. The segregation was found to be independent of the cooling rates employed in this report, and to our knowledge has not been found nor reported for 2D h-BN growth so far, and thus provides an important direction for controlled growth of h-BN. This unique segregation behavior is a result of a combined effect of high diffusivity, small film thickness and the inability to achieve extremely high cooling rates in CVD systems. The resulting D-SS h-BN films exhibit excellent electrical insulating behavior with an optical bandgap of about 5.8 eV. Moreover, graphene-on-h-BN field effect transistors using the as-grown D-SS h-BN films show a mobility of about 6000 cm2 V-1 s-1 at room temperature.

Isotope engineering of van der Waals interactions in hexagonal boron nitride

NASA Astrophysics Data System (ADS)

Vuong, T. Q. P.; Liu, S.; van der Lee, A.; Cuscó, R.; Artús, L.; Michel, T.; Valvin, P.; Edgar, J. H.; Cassabois, G.; Gil, B.

2018-02-01

Hexagonal boron nitride is a model lamellar compound where weak, non-local van der Waals interactions ensure the vertical stacking of two-dimensional honeycomb lattices made of strongly bound boron and nitrogen atoms. We study the isotope engineering of lamellar compounds by synthesizing hexagonal boron nitride crystals with nearly pure boron isotopes (10B and 11B) compared to those with the natural distribution of boron (20 at% 10B and 80 at% 11B). On the one hand, as with standard semiconductors, both the phonon energy and electronic bandgap varied with the boron isotope mass, the latter due to the quantum effect of zero-point renormalization. On the other hand, temperature-dependent experiments focusing on the shear and breathing motions of adjacent layers revealed the specificity of isotope engineering in a layered material, with a modification of the van der Waals interactions upon isotope purification. The electron density distribution is more diffuse between adjacent layers in 10BN than in 11BN crystals. Our results open perspectives in understanding and controlling van der Waals bonding in layered materials.

Isotope engineering of van der Waals interactions in hexagonal boron nitride.

PubMed

Vuong, T Q P; Liu, S; Van der Lee, A; Cuscó, R; Artús, L; Michel, T; Valvin, P; Edgar, J H; Cassabois, G; Gil, B

2018-02-01

Hexagonal boron nitride is a model lamellar compound where weak, non-local van der Waals interactions ensure the vertical stacking of two-dimensional honeycomb lattices made of strongly bound boron and nitrogen atoms. We study the isotope engineering of lamellar compounds by synthesizing hexagonal boron nitride crystals with nearly pure boron isotopes ( 10 B and 11 B) compared to those with the natural distribution of boron (20 at% 10 B and 80 at% 11 B). On the one hand, as with standard semiconductors, both the phonon energy and electronic bandgap varied with the boron isotope mass, the latter due to the quantum effect of zero-point renormalization. On the other hand, temperature-dependent experiments focusing on the shear and breathing motions of adjacent layers revealed the specificity of isotope engineering in a layered material, with a modification of the van der Waals interactions upon isotope purification. The electron density distribution is more diffuse between adjacent layers in 10 BN than in 11 BN crystals. Our results open perspectives in understanding and controlling van der Waals bonding in layered materials.

Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation

NASA Astrophysics Data System (ADS)

Ngau, Julie L.; Griffin, Peter B.; Plummer, James D.

2001-08-01

Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank-Turnbull reactions. This study of boron TED reduction in Si1-x-yGexCy during 750 °C inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes {311} defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank-Turnbull reaction, and a carbon interstitial-carbon substitutional (CiCs) pairing reaction that successfully simulates carbon suppression of boron TED at 750 °C for anneal times ranging from 10 s to 60 min.

Characterization of iron in silicon by low-temperature photoluminescence and deep-level transient spectroscopy

NASA Astrophysics Data System (ADS)

Nakamura, Minoru; Murakami, Susumu; Udono, Haruhiko

2018-03-01

We investigate the relationship between the intensity of band-edge (BDE) photoluminescence (PL) from 10 to 70 K and the concentration of iron diffused in boron-doped p-type silicon. Because of the nonradiative recombination activity of the interstitial iron-boron complex (FeiB center), the BDE-PL intensity at each temperature varies distinctively and systematically with the iron concentration, which means that this method has the potential to make the accurate measurements of a wide range of interstitial iron concentrations in silicon. The iron precipitates formed in the bulk and/or at the surface are found to exert much weaker recombination activity for excess carriers than FeiB center by exploiting both PL and deep-level transient spectroscopy (DLTS) measurements. The unexpected enhancement in BDE-PL intensity from iron-diffused silicon between 20 and 50 K is attributed to the passivation of the Si-oxide/Si interface by iron. For the samples diffused with trace amounts of iron, the iron concentration within 20 μm of the surface is significantly greater than that in the bulk, as measured by DLTS. This result is tentatively attributed to the affinity of iron with the Si-oxide.

Modeling Issues and Results for Hydrogen Isotopes in NIF Materials

NASA Astrophysics Data System (ADS)

Grossman, Arthur A.; Doerner, R. P.; Luckhardt, S. C.; Seraydarian, R.; Sze, D.; Burnham, A.

1998-11-01

The TMAP4 (G. Longhurst, et al. INEL 1992) model of hydrogen isotope transport in solid materials includes a particle diffusion calculation with Fick's Law modified for Soret Effect (Thermal Diffusion or Thermomigration), coupled to heat transport calculations which are needed because of the strong temperature dependence of diffusivity. These TMAP4 calculations applied to NIF show that high temperatures approaching the melting point and strong thermal gradients of 10^6 K/cm are reached in the first micron of wall material during the SXR pulse. These strong thermal gradients can drive hydrogen isotope migration up or down the thermal gradient depending on the sign of the heat of transport (Soret coefficient) which depends on whether the material dissolves hydrogen endothermically or exothermically. Two candidates for NIF wall material-boron carbide and stainless steel are compared. Boron carbide dissolves hydrogen exothermically so it may drive Soret migration down the thermal gradient deeper into the material, although the thermal gradient is not as large and hydrogen is not as mobile as in stainless steel. Stainless steel dissolves hydrogen endothermically, with a negative Soret coefficient which can drive hydrogen up the thermal gradient and out of the wall.

Boron diffusion in silicon devices

DOEpatents

Rohatgi, Ajeet; Kim, Dong Seop; Nakayashiki, Kenta; Rounsaville, Brian

2010-09-07

Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

Effect of dopants on annealing performance of silicon solar cells

NASA Technical Reports Server (NTRS)

Scott-Monck, J. A.; Anspaugh, B. E.

1979-01-01

The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.

Reactivity Coefficient Calculation for AP1000 Reactor Using the NODAL3 Code

NASA Astrophysics Data System (ADS)

Pinem, Surian; Malem Sembiring, Tagor; Tukiran; Deswandri; Sunaryo, Geni Rina

2018-02-01

The reactivity coefficient is a very important parameter for inherent safety and stability of nuclear reactors operation. To provide the safety analysis of the reactor, the calculation of changes in reactivity caused by temperature is necessary because it is related to the reactor operation. In this paper, the temperature reactivity coefficients of fuel and moderator of the AP1000 core are calculated, as well as the moderator density and boron concentration. All of these coefficients are calculated at the hot full power condition (HFP). All neutron diffusion constant as a function of temperature, water density and boron concentration were generated by the SRAC2006 code. The core calculations for determination of the reactivity coefficient parameter are done by using NODAL3 code. The calculation results show that the fuel temperature, moderator temperature and boron reactivity coefficients are in the range between -2.613 pcm/°C to -4.657pcm/°C, -1.00518 pcm/°C to 1.00649 pcm/°C and -9.11361 pcm/ppm to -8.0751 pcm/ppm, respectively. For the water density reactivity coefficients, the positive reactivity occurs at the water temperature less than 190 °C. The calculation results show that the reactivity coefficients are accurate because the results have a very good agreement with the design value.

Laser doping of boron-doped Si paste for high-efficiency silicon solar cells

NASA Astrophysics Data System (ADS)

Tomizawa, Yuka; Imamura, Tetsuya; Soeda, Masaya; Ikeda, Yoshinori; Shiro, Takashi

2015-08-01

Boron laser doping (LD) is a promising technology for high-efficiency solar cells such as p-type passivated locally diffused solar cells and n-type Si-wafer-based solar cells. We produced a printable phosphorus- or boron-doped Si paste (NanoGram® Si paste/ink) for use as a diffuser in the LD process. We used the boron LD process to fabricate high-efficiency passivated emitter and rear locally diffused (PERL) solar cells. PERL solar cells on Czochralski Si (Cz-Si) wafers yielded a maximum efficiency of 19.7%, whereas the efficiency of a reference cell was 18.5%. Fill factors above 79% and open circuit voltages above 655 mV were measured. We found that the boron-doped area effectively performs as a local boron back surface field (BSF). The characteristics of the solar cell formed using NanoGram® Si paste/ink were better than those of the reference cell.

Boron Diffusion in Surface-Treated Framing Lumber

Treesearch

Patricia K. Lebow; Stan T. Lebow; Steven A. Halverson

2013-01-01

The extent of boron penetration in framing lumber treated by spray applications during construction is not well quantified. This study evaluated the effect of formulation and concentration on diffusion of boron in lumber specimens that were equilibrated in conditions that produced wood moisture contents of 18 to 21 percent. One set of specimens was pressure treated...

Isotope heat source simulator for testing of space power systems

NASA Technical Reports Server (NTRS)

Prok, G. M.; Smith, R. B.

1973-01-01

A reliable isotope heat source simulator was designed for use in a Brayton power system. This simulator is composed of an electrically heated tungsten wire which is wound around a boron nitride core and enclosed in a graphite jacket. Simulator testing was performed at the expected operating temperature of the Brayton power system. Endurance testing for 5012 hours was followed by cycling the simulator temperature. The integrity of this simulator was maintained throughout testing. Alumina beads served as a diffusion barrier to prevent interaction between the tungsten heater and boron nitride core. The simulator was designed to maintain a surface temperature of 1311 to 1366 K (1900 to 2000 F) with a power input of approximately 400 watts. The design concept and the materials used in the simulator make possible man different geometries. This flexibility increases its potential use.

Impact of a boron rich layer on minority carrier lifetime degradation in boron spin-on dopant diffused n-type crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Singha, Bandana; Singh Solanki, Chetan

2016-03-01

In the production of n-type crystalline silicon solar cells with boron diffused emitters, the formation of a boron rich layer (BRL) is a common phenomenon and is largely responsible for bulk lifetime degradation. The phenomenon of BRL formation during diffusion of boron spin-on dopant and its impact on bulk lifetime degradation are investigated in this work. The BRL formed beneath the borosilicate glass layer has thicknesses varying from 10 nm-150 nm depending on the diffusion conditions. The effective and bulk minority carrier lifetimes, measured with Al2O3 deposited layers and a quinhydron-methanol solution, show that carrier lifetime degradation is proportional to the BRL thicknesses and their surface recombination velocities. The controlled diffusion processes and different oxidation techniques used in this work can partially reduce the BRL thickness and improve carrier lifetime by more than 10%. But for BRL thicknesses higher than 50 nm, different etching techniques further lower the carrier lifetime and the degradation in the device cannot be recovered.

Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

NASA Astrophysics Data System (ADS)

Poklonski, N. A.; Vyrko, S. A.; Poklonskaya, O. N.; Kovalev, A. I.; Zabrodskii, A. G.

2016-06-01

A quasi-classical model of ionization equilibrium in the p-type diamond between hydrogen-like acceptors (boron atoms which substitute carbon atoms in the crystal lattice) and holes in the valence band (v-band) is proposed. The model is applicable on the insulator side of the insulator-metal concentration phase transition (Mott transition) in p-Dia:B crystals. The densities of the spatial distributions of impurity atoms (acceptors and donors) and of holes in the crystal are considered to be Poissonian, and the fluctuations of their electrostatic potential energy are considered to be Gaussian. The model accounts for the decrease in thermal ionization energy of boron atoms with increasing concentration, as well as for electrostatic fluctuations due to the Coulomb interaction limited to two nearest point charges (impurity ions and holes). The mobility edge of holes in the v-band is assumed to be equal to the sum of the threshold energy for diffusion percolation and the exchange energy of the holes. On the basis of the virial theorem, the temperature Tj is determined, in the vicinity of which the dc band-like conductivity of holes in the v-band is approximately equal to the hopping conductivity of holes via the boron atoms. For compensation ratio (hydrogen-like donor to acceptor concentration ratio) K ≈ 0.15 and temperature Tj, the concentration of "free" holes in the v-band and their jumping (turbulent) drift mobility are calculated. Dependence of the differential energy of thermal ionization of boron atoms (at the temperature 3Tj/2) as a function of their concentration N is calculated. The estimates of the extrapolated into the temperature region close to Tj hopping drift mobility of holes hopping from the boron atoms in the charge states (0) to the boron atoms in the charge states (-1) are given. Calculations based on the model show good agreement with electrical conductivity and Hall effect measurements for p-type diamond with boron atom concentrations in the range from 3 × 1017 to 3 × 1020 cm-3, i.e., up to the Mott transition. The model uses no fitting parameters.

Chromium boron surfaced nickel-iron base alloys

NASA Technical Reports Server (NTRS)

Rashid, James M. (Inventor); Friedrich, Leonard A. (Inventor); Freling, Melvin (Inventor)

1984-01-01

Chromium boron diffusion coatings on nickel iron alloys uniquely provide them with improvement in high cycle fatigue strength (up to 30%) and erosion resistance (up to 15 times), compared to uncoated alloy. The diffused chromium layer extends in two essential concentration zones to a total depth of about 40.times.10.sup.-6 m, while the succeeding boron layer is limited to 50-90% of the depth of the richest Cr layer nearest the surface. Both coatings are applied using conventional pack diffusion processes.

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrof, Julian; Müller, Ralph; Reedy, Robert C.

2015-07-28

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detailmore » by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr3 diffusion« less

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au; Bowers, H.; Ganesan, K.

2016-06-14

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to mapmore » out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.« less

Effect of thermal and thermo-mechanical cycling on the boron segregation behavior in the coarse-grained heat-affected zone of low-alloy steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Sanghoon; Kang, Yongjoon; Lee, Changhee, E-mail: chlee@hanyang.ac.kr

The boron segregation behavior in the coarse-grained heat-affected zone (CGHAZ) of 10 ppm boron-added low-alloy steel during the welding cycle was investigated by taking the changes in the microstructure and hardness into account. Various CGHAZs were simulated with a Gleeble system as a function of the heat input and external stress, and the boron segregation behavior was analyzed by secondary ion mass spectrometry (SIMS) and particle tracking autoradiography (PTA). The segregation of boron was found to initially increase, and then decrease with an increase in the heat input. This is believed to be due to the back-diffusion of boron withmore » an increase in the exposure time at high temperature after non-equilibrium grain boundary segregation. The grain boundary segregation of boron could be decreased by an external stress applied during the welding cycle. Such behavior may be due to an increase in the grain boundary area as a result of the grain size reduction induced by the external stress. - Highlights: • Boron segregation behavior in the CGHAZ of low-alloy steel during a welding cycle was investigated. • Various CGHAZs were simulated with a Gleeble system as a function of the heat input and external stress. • Boron segregation behavior was analyzed using SIMS and PTA techniques.« less

X-Ray Diffuse Scattering Study of the Kinetics of Stacking Fault Growth and Annihilation in Boron-Implanted Silicon.

NASA Astrophysics Data System (ADS)

Patel, J. R.

2002-06-01

Stacking faults in boron-implanted silicon give rise to streaks or rods of scattered x-ray intensity normal to the stacking fault plane. We have used the diffuse scattering rods to follow the growth of faults as a function of time when boron-implanted silicon is annealed in the range 925 - 1025 C.

Superconducting MgB2 wires with vanadium diffusion barrier

NASA Astrophysics Data System (ADS)

Hušek, I.; Kováč, P.; Melišek, T.; Kulich, M.; Rosová, A.; Kopera, L.; Szundiová, B.

2017-10-01

Single-core MgB2 wires with a vanadium barrier and Cu stabilization have been made by the in situ powder-in-tube (PIT) and internal magnesium diffusion (IMD) into boron processes. Heat treatment of PIT wires was done at the temperature range of 650 °C-850 °C/30 min. Critical currents of differently treated MgB2/V/Cu wires have been measured and related with the structure of MgB2. It was found that critical current density of MgB2/V wire annealed above 700 °C decreases rapidly. The obtained results clearly show that vanadium is a well formable metal and can be applied as an effective diffusion barrier for MgB2 wires heat-treated at temperatures ≤700 °C. This temperature limit is well applicable for MgB2 wires with high current densities made by PIT and also by the IMD process.

Kinetics and Tribological Characterization of Pack-Borided AISI 1025 Steel

NASA Astrophysics Data System (ADS)

Gómez-Vargas, O. A.; Keddam, M.; Ortiz-Domínguez, M.

2017-03-01

In this present study, the AISI 1025 steel was pack-borided in the temperature range of 1,123-1,273 K for different treatment times ranging from 2 to 8 h. A diffusion model was suggested to estimate the boron diffusion coefficients in the Fe2B layers. As a result, the boron activation energy for the AISI 1025 steel was estimated as 174.36 kJ/mol. This value of energy was compared with the literature data. To extend the validity of the present model, other additional boriding conditions were considered. The boride layers formed on the AISI 1025 steel were characterized by the following experimental techniques: scanning electron microscopy, X-ray diffraction analysis and the Daimler-Benz Rockwell-C indentation technique. Finally, the scratch and pin-on-disc tests for wear resistance were achieved using an LG Motion Ltd and a CSM tribometer, respectively, under dry sliding conditions.

Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Soshi, E-mail: sato.soshi@cies.tohoku.ac.jp; Honjo, Hiroaki; Niwa, Masaaki

2015-04-06

We have investigated the redox reaction on the surface of Ta/CoFeB/MgO/CoFeB magnetic tunnel junction stack samples after annealing at 300, 350, and 400 °C for 1 h using angle-resolved X-ray photoelectron spectroscopy for precise analysis of the chemical bonding states. At a capping tantalum layer thickness of 1 nm, both the capping tantalum layer and the surface of the underneath CoFeB layer in the as-deposited stack sample were naturally oxidized. By comparison of the Co 2p and Fe 2p spectra among the as-deposited and annealed samples, reduction of the naturally oxidized cobalt and iron atoms occurred on the surface of the CoFeB layer.more » The reduction reaction was more significant at higher annealing temperature. Oxidized cobalt and iron were reduced by boron atoms that diffused toward the surface of the top CoFeB layer. A single CoFeB layer was prepared on SiO{sub 2}, and a confirmatory evidence of the redox reaction with boron diffusion was obtained by angle-resolved X-ray photoelectron spectroscopy analysis of the naturally oxidized surface of the CoFeB single layer after annealing. The redox reaction is theoretically reasonable based on the Ellingham diagram.« less

Complex fine-scale diffusion coating formed at low temperature on high-speed steel substrate

NASA Astrophysics Data System (ADS)

Chaus, A. S.; Pokorný, P.; Čaplovič, Ľ.; Sitkevich, M. V.; Peterka, J.

2018-04-01

A complex B-C-N diffusion coating was produced at 580 °C for 1 h on AISI M35 steel substrate and compared with a reference coating formed at 880 °C for 2.5 h. The surface and the cross-sections of the samples were subjected to detailed characterisation. The surface roughness, hardness, residual stresses and adhesion of the coatings were also evaluated together with cutting tests using drills on coated and uncoated samples while monitoring cutting force and torque. The surface of the steel treated at 580 °C revealed Fe2B, boron nitride and boron iron carbide, but FeB was noted to be absent. The 580 °C coating had the fine-scale microstructure, which resulted in the excellent adhesion and enhanced wear resistance, relative to reference samples that contained coarse borides. The results established that a complex fine-scale diffusion coating enhanced the wear resistance and reduces the cutting force and torque during drilling, thereby increasing the drill life by a factor of 2.2.

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrof, Julian, E-mail: julian.schrof@ise.fraunhofer.de; Müller, Ralph; Benick, Jan

2015-07-28

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr{sub 3} furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in moremore » detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr{sub 3} diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr{sub 3} diffusion.« less

Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon.

PubMed

Lill, Patrick C; Dahlinger, Morris; Köhler, Jürgen R

2017-02-16

Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models laser-induced melting as well as dopant diffusion, and excellently reproduces the secondary ion mass spectroscopy-measured boron profiles. We determine a partitioning coefficient k p above unity with k p = 1 . 25 ± 0 . 05 and thermally-activated diffusivity D B , with a value D B ( 1687 K ) = ( 3 . 53 ± 0 . 44 ) × 10 - 4 cm 2 ·s - 1 of boron in liquid silicon. For similar laser parameters and process conditions, our model predicts the anticipated boron profile of a laser doping experiment.

Abnormal growth kinetics of h-BN epitaxial monolayer on Ru(0001) enhanced by subsurface Ar species

NASA Astrophysics Data System (ADS)

Wei, Wei; Meng, Jie; Meng, Caixia; Ning, Yanxiao; Li, Qunxiang; Fu, Qiang; Bao, Xinhe

2018-04-01

Growth kinetics of epitaxial films often follows the diffusion-limited aggregation mechanism, which shows a "fractal-to-compact" morphological transition with increasing growth temperature or decreasing deposition flux. Here, we observe an abnormal "compact-to-fractal" morphological transition with increasing growth temperature for hexagonal boron nitride growth on the Ru(0001) surface. The unusual growth process can be explained by a reaction-limited aggregation (RLA) mechanism. Moreover, introduction of the subsurface Ar atoms has enhanced this RLA growth behavior by decreasing both reaction and diffusion barriers. Our work may shed light on the epitaxial growth of two-dimensional atomic crystals and help to control their morphology.

High temperature coatings for gas turbines

DOEpatents

Zheng, Xiaoci Maggie

2003-10-21

Coating for high temperature gas turbine components that include a MCrAlX phase, and an aluminum-rich phase, significantly increase oxidation and cracking resistance of the components, thereby increasing their useful life and reducing operating costs. The aluminum-rich phase includes aluminum at a higher concentration than aluminum concentration in the MCrAlX alloy, and an aluminum diffusion-retarding composition, which may include cobalt, nickel, yttrium, zirconium, niobium, molybdenum, rhodium, cadmium, indium, cerium, iron, chromium, tantalum, silicon, boron, carbon, titanium, tungsten, rhenium, platinum, and combinations thereof, and particularly nickel and/or rhenium. The aluminum-rich phase may be derived from a particulate aluminum composite that has a core comprising aluminum and a shell comprising the aluminum diffusion-retarding composition.

Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poklonski, N. A., E-mail: poklonski@bsu.by; Vyrko, S. A.; Poklonskaya, O. N.

A quasi-classical model of ionization equilibrium in the p-type diamond between hydrogen-like acceptors (boron atoms which substitute carbon atoms in the crystal lattice) and holes in the valence band (v-band) is proposed. The model is applicable on the insulator side of the insulator–metal concentration phase transition (Mott transition) in p-Dia:B crystals. The densities of the spatial distributions of impurity atoms (acceptors and donors) and of holes in the crystal are considered to be Poissonian, and the fluctuations of their electrostatic potential energy are considered to be Gaussian. The model accounts for the decrease in thermal ionization energy of boron atomsmore » with increasing concentration, as well as for electrostatic fluctuations due to the Coulomb interaction limited to two nearest point charges (impurity ions and holes). The mobility edge of holes in the v-band is assumed to be equal to the sum of the threshold energy for diffusion percolation and the exchange energy of the holes. On the basis of the virial theorem, the temperature T{sub j} is determined, in the vicinity of which the dc band-like conductivity of holes in the v-band is approximately equal to the hopping conductivity of holes via the boron atoms. For compensation ratio (hydrogen-like donor to acceptor concentration ratio) K ≈ 0.15 and temperature T{sub j}, the concentration of “free” holes in the v-band and their jumping (turbulent) drift mobility are calculated. Dependence of the differential energy of thermal ionization of boron atoms (at the temperature 3T{sub j}/2) as a function of their concentration N is calculated. The estimates of the extrapolated into the temperature region close to T{sub j} hopping drift mobility of holes hopping from the boron atoms in the charge states (0) to the boron atoms in the charge states (−1) are given. Calculations based on the model show good agreement with electrical conductivity and Hall effect measurements for p-type diamond with boron atom concentrations in the range from 3 × 10{sup 17} to 3 × 10{sup 20 }cm{sup −3}, i.e., up to the Mott transition. The model uses no fitting parameters.« less

Boron diffusion in bcc-Fe studied by first-principles calculations

NASA Astrophysics Data System (ADS)

Xianglong, Li; Ping, Wu; Ruijie, Yang; Dan, Yan; Sen, Chen; Shiping, Zhang; Ning, Chen

2016-03-01

The diffusion mechanism of boron in bcc-Fe has been studied by first-principles calculations. The diffusion coefficients of the interstitial mechanism, the B-monovacancy complex mechanism, and the B-divacancy complex mechanism have been calculated. The calculated diffusion coefficient of the interstitial mechanism is D0 = 1.05 × 10-7 exp (-0.75 eV/kT) m2 · s-1, while the diffusion coefficients of the B-monovacancy and the B-divacancy complex mechanisms are D1 = 1.22 × 10-6 f1 exp (-2.27 eV/kT) m2 · s-1 and D2 ≈ 8.36 × 10-6 exp (-4.81 eV/kT) m2 · s-1, respectively. The results indicate that the dominant diffusion mechanism in bcc-Fe is the interstitial mechanism through an octahedral interstitial site instead of the complex mechanism. The calculated diffusion coefficient is in accordance with the reported experiment results measured in Fe-3%Si-B alloy (bcc structure). Since the non-equilibrium segregation of boron is based on the diffusion of the complexes as suggested by the theory, our calculation reasonably explains why the non-equilibrium segregation of boron is not observed in bcc-Fe in experiments. Project supported by the National Natural Science Foundation of China (Grant No. 51276016) and the National Basic Research Program of China (Grant No. 2012CB720406).

Insights into the Mechanisms Underlying Boron Homeostasis in Plants

PubMed Central

Yoshinari, Akira; Takano, Junpei

2017-01-01

Boron is an essential element for plants but is toxic in excess. Therefore, plants must adapt to both limiting and excess boron conditions for normal growth. Boron transport in plants is primarily based on three transport mechanisms across the plasma membrane: passive diffusion of boric acid, facilitated diffusion of boric acid via channels, and export of borate anion via transporters. Under boron -limiting conditions, boric acid channels and borate exporters function in the uptake and translocation of boron to support growth of various plant species. In Arabidopsis thaliana, NIP5;1 and BOR1 are located in the plasma membrane and polarized toward soil and stele, respectively, in various root cells, for efficient transport of boron from the soil to the stele. Importantly, sufficient levels of boron induce downregulation of NIP5;1 and BOR1 through mRNA degradation and proteolysis through endocytosis, respectively. In addition, borate exporters, such as Arabidopsis BOR4 and barley Bot1, function in boron exclusion from tissues and cells under conditions of excess boron. Thus, plants actively regulate intracellular localization and abundance of transport proteins to maintain boron homeostasis. In this review, the physiological roles and regulatory mechanisms of intracellular localization and abundance of boron transport proteins are discussed. PMID:29204148

Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure

NASA Astrophysics Data System (ADS)

Cadiz, F.; Robert, C.; Courtade, E.; Manca, M.; Martinelli, L.; Taniguchi, T.; Watanabe, K.; Amand, T.; Rowe, A. C. H.; Paget, D.; Urbaszek, B.; Marie, X.

2018-04-01

We have combined spatially resolved steady-state micro-photoluminescence with time-resolved photoluminescence to investigate the exciton diffusion in a WSe2 monolayer encapsulated with hexagonal boron nitride. At 300 K, we extract an exciton diffusion length of LX = 0.36 ± 0.02 μm and an exciton diffusion coefficient of DX = 14.5 ± 2 cm2/s. This represents a nearly 10-fold increase in the effective mobility of excitons with respect to several previously reported values on nonencapsulated samples. At cryogenic temperatures, the high optical quality of these samples has allowed us to discriminate the diffusion of the different exciton species: bright and dark neutral excitons, as well as charged excitons. The longer lifetime of dark neutral excitons yields a larger diffusion length of LXD=1.5 ±0.02 μ m.

Microstructure and surface chemistry of amorphous alloys important to their friction and wear behavior

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1983-01-01

An investigation was conducted to examine the microstructure and surface chemistry of amorphous alloys, and their effects on tribological behavior. The results indicate that the surface oxide layers present on amorphous alloys are effective in providing low friction and a protective film against wear in air. Clustering and crystallization in amorphous alloys can be enhanced as a result of plastic flow during the sliding process at a low sliding velocity, at room temperature. Clusters or crystallines with sizes to 150 nm and a diffused honeycomb-shaped structure are produced on the wear surface. Temperature effects lead to drastic changes in surface chemistry and friction behavior of the alloys at temperatures to 750 C. Contaminants can come from the bulk of the alloys to the surface upon heating and impart to the surface oxides at 350 C and boron nitride above 500 C. The oxides increase friction while the boron nitride reduces friction drastically in vacuum.

Self-Diffusion in Amorphous Silicon by Local Bond Rearrangements

NASA Astrophysics Data System (ADS)

Kirschbaum, J.; Teuber, T.; Donner, A.; Radek, M.; Bougeard, D.; Böttger, R.; Hansen, J. Lundsgaard; Larsen, A. Nylandsted; Posselt, M.; Bracht, H.

2018-06-01

Experiments on self-diffusion in amorphous silicon (Si) were performed at temperatures between 460 to 600 ° C . The amorphous structure was prepared by Si ion implantation of single crystalline Si isotope multilayers epitaxially grown on a silicon-on-insulator wafer. The Si isotope profiles before and after annealing were determined by means of secondary ion mass spectrometry. Isothermal diffusion experiments reveal that structural relaxation does not cause any significant intermixing of the isotope interfaces whereas self-diffusion is significant before the structure recrystallizes. The temperature dependence of self-diffusion is described by an Arrhenius law with an activation enthalpy Q =(2.70 ±0.11 ) eV and preexponential factor D0=(5.5-3.7+11.1)×10-2 cm2 s-1 . Remarkably, Q equals the activation enthalpy of hydrogen diffusion in amorphous Si, the migration of bond defects determining boron diffusion, and the activation enthalpy of solid phase epitaxial recrystallization reported in the literature. This close agreement provides strong evidence that self-diffusion is mediated by local bond rearrangements rather than by the migration of extended defects as suggested by Strauß et al. (Phys. Rev. Lett. 116, 025901 (2016), 10.1103/PhysRevLett.116.025901).

B Layers and Adhesion on Armco Iron Substrate

NASA Astrophysics Data System (ADS)

Elias-Espinosa, M.; Ortiz-Domínguez, M.; Keddam, M.; Flores-Rentería, M. A.; Damián-Mejía, O.; Zuno-Silva, J.; Hernández-Ávila, J.; Cardoso-Legorreta, E.; Arenas-Flores, A.

2014-08-01

In this work, a kinetic model was suggested to evaluate the boron diffusion coefficient in the Fe2B layers grown on the Armco iron substrate by the powder-pack boriding. This thermochemical treatment was carried out in the temperature range of 1123-1273 K for treatment times ranging from 2 to 8 h. The boron diffusion coefficient in the Fe2B layers was estimated by solving the mass balance equation at the (Fe2B/substrate) interface with an inclusion of boride incubation time. To validate the present model, the simulated value of Fe2B layer thickness was compared with the experimental value obtained at 1253 K for a treatment time of 5 h. The morphology of Fe2B layers was observed by SEM and optical microscopy. Metallographic studies showed that the boride layer has a saw-tooth morphology in all the samples. The layer thickness measurements were done with the help of MSQ PLUS software. The Fe2B phase was identified by x-ray diffraction method. Finally, the adherence of Fe2B layers on the Armco iron substrate was qualitatively evaluated by using the Daimler-Benz Rockwell-C indentation technique. In addition, the estimated value of boron activation energy was compared to the literature data.

Kinetic Investigation and Wear Properties of Fe2B Layers on AISI 12L14 Steel

NASA Astrophysics Data System (ADS)

Keddam, M.; Ortiz-Dominguez, M.; Elias-Espinosa, M.; Arenas-Flores, A.; Zuno-Silva, J.; Zamarripa-Zepeda, D.; Gomez-Vargas, O. A.

2018-03-01

In the current study, the powder-pack boriding was applied to the AISI 12L14 steel in the temperature range 1123 K to 1273 K for an exposure time between 2 and 8 hours. The produced boride layer was composed of Fe2B with a sawtooth morphology. A diffusion model based on the integral method was applied to investigate the growth kinetics of Fe2B layers. As a main result, the boron diffusion coefficients in Fe2B were estimated by considering the principle of mass balance at the (Fe2B/substrate) interface with an inclusion of boride incubation times. The value of activation energy for boron diffusion in AISI 12L14 steel was estimated as 165 kJ mol-1 and compared with other values of activation energy found in the literature. An experimental validation of the present model was made by using four different boriding conditions. Furthermore, the Rockwell-C adhesion test was employed to assess the cohesion of boride layers to the base metal. The scratch and pin-on-disc tests were also carried out to analyze the effect of boriding on wear behavior of AISI 12L14 steel.

Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

1983-01-01

Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

Reduction in Recombination Current Density in Boron Doped Silicon Using Atomic Hydrogen

NASA Astrophysics Data System (ADS)

Young, Matthew Garett

The solar industry has grown immensely in recent years and has reached a point where solar energy has now become inexpensive enough that it is starting to emerge as a mainstream electrical generation source. However, recent economic analysis has suggested that for solar to become a truly wide spread source of electricity, the costs still need to plummet by a factor of 8x. This demands new and innovative concepts to help lower such cost. In pursuit of this goal, this dissertation examines the use of atomic hydrogen to lessen the recombination current density in the boron doped region of n-type silicon solar cells. This required the development of a boron diffusion process that maintained the bulk lifetime of n-type silicon such that the recombination current density could be extracted by photoconductance spectroscopy. It is demonstrated that by hydrogenating boron diffusions, the majority carrier concentration can be controlled. By using symmetrically diffused test structures with quinhydrone-methanol surface passivation the recombination current density of a hydrogenated boron profile is shown to be less than that of a standard boron profile, by as much as 30%. This is then applied to a modified industrial silicon solar cell process to demonstrate an efficiency enhancement of 0.4%.

Multilayer Regulation of Atomic Boron Nitride Films to Improve Oxidation and Corrosion Resistance of Cu.

PubMed

Ren, Siming; Cui, Mingjun; Pu, Jibin; Xue, Qunji; Wang, Liping

2017-08-16

The boron nitride (BN) monolayer (1L) with high impermeability and resistivity seems to hold promise as a long-term corrosion barrier for Cu under ambient condition, which is supported by recent researches. Here, we perform a complete study of the alternating temperature tests (the sample is exposed in air for 30 days and subsequently heated at 200 °C for 2 h) and electrochemical measurements on 1L and multilayer BN-coated Cu foils. Results imply that the BN-coated Cu foils are less oxidized than uncoated Cu foils after alternating temperature tests, regardless of the layers of BN. Particularly, the oxidation process proceeds slowly in multilayers because most of the underlying defects are covered with BN layers to suppress the oxygen diffusion in the vertical direction and the oxidation mainly occurs on the wrinkled region of BN films. Electrochemical analyses reveal that the BN layers provide an effective physical barrier against the corrosive medium and inhibit the electron diffusion because of their high electrical insulating behavior and the corrosion resistance of the samples increases with increasing BN layers. These findings indicate that BN films with adequate layers are good candidates for oxidation and corrosion protection at the atomic level, which is vital to many industrial and academic applications.

Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.

1980-01-01

The defect responsible for reverse annealing in 2 ohm/cm n(+)/p silicon solar cells was identified. This defect, with energy level at e sub v + 0.30 eV was tentatively identified as a boron oxygen-vacancy complex. Results indicate that its removal could result in significant annealing for 2 ohm/cm and lower resistivity cells at temperatures as low as 200 C. These results were obtained by use of an expression derived from the Shockley-Read-Hall recombination theory which relates measured diffusion length ratios to relative defect concentrations and electron capture cross sections. The relative defect concentrations and one of the required capture cross sections are obtained from Deep Level Transient Spectroscopy. Four additional capture cross sections are obtained using diffusion length data and data from temperature dependent lifetime studied. These calculated results are in reasonable agreement with experimental data.

The Combined Action of Duplicated Boron Transporters Is Required for Maize Growth in Boron-Deficient Conditions.

PubMed

Chatterjee, Mithu; Liu, Qiujie; Menello, Caitlin; Galli, Mary; Gallavotti, Andrea

2017-08-01

The micronutrient boron is essential in maintaining the structure of plant cell walls and is critical for high yields in crop species. Boron can move into plants by diffusion or by active and facilitated transport mechanisms. We recently showed that mutations in the maize boron efflux transporter ROTTEN EAR (RTE) cause severe developmental defects and sterility. RTE is part of a small gene family containing five additional members ( RTE2 - RTE6 ) that show tissue-specific expression. The close paralogous gene RTE2 encodes a protein with 95% amino acid identity with RTE and is similarly expressed in shoot and root cells surrounding the vasculature. Despite sharing a similar function with RTE , mutations in the RTE2 gene do not cause growth defects in the shoot, even in boron-deficient conditions. However, rte2 mutants strongly enhance the rte phenotype in soils with low boron content, producing shorter plants that fail to form all reproductive structures. The joint action of RTE and RTE2 is also required in root development. These defects can be fully complemented by supplying boric acid, suggesting that diffusion or additional transport mechanisms overcome active boron transport deficiencies in the presence of an excess of boron. Overall, these results suggest that RTE2 and RTE function are essential for maize shoot and root growth in boron-deficient conditions. Copyright © 2017 by the Genetics Society of America.

Matrix Transformation in Boron Containing High-Temperature Co-Re-Cr Alloys

NASA Astrophysics Data System (ADS)

Strunz, Pavel; Mukherji, Debashis; Beran, Přemysl; Gilles, Ralph; Karge, Lukas; Hofmann, Michael; Hoelzel, Markus; Rösler, Joachim; Farkas, Gergely

2018-03-01

An addition of boron largely increases the ductility in polycrystalline high-temperature Co-Re alloys. Therefore, the effect of boron on the alloy structural characteristics is of high importance for the stability of the matrix at operational temperatures. Volume fractions of ɛ (hexagonal close-packed—hcp), γ (face-centered cubic—fcc) and σ (Cr2Re3 type) phases were measured at ambient and high temperatures (up to 1500 °C) for a boron-containing Co-17Re-23Cr alloy using neutron diffraction. The matrix phase undergoes an allotropic transformation from ɛ to γ structure at high temperatures, similar to pure cobalt and to the previously investigated, more complex Co-17Re-23Cr-1.2Ta-2.6C alloy. It was determined in this study that the transformation temperature depends on the boron content (0-1000 wt. ppm). Nevertheless, the transformation temperature did not change monotonically with the increase in the boron content but reached a minimum at approximately 200 ppm of boron. A probable reason is the interplay between the amount of boron in the matrix and the amount of σ phase, which binds hcp-stabilizing elements (Cr and Re). Moreover, borides were identified in alloys with high boron content.

Thermal transport in boron nitride nanotorus—towards a nanoscopic thermal shield

NASA Astrophysics Data System (ADS)

Loh, G. C.; Baillargeat, D.

2013-11-01

Nanotori, or nanorings, are topological variants of nanotubes and are conceived to have different properties from their tubular form. In this study, the toroidal arrangement of boron nitride is introduced. Using classical molecular dynamics simulations, the thermal behaviour (thermal conductivity and thermal stability) of the boron nitride nanotorus and its relationship with the structural characteristics are investigated. Its circumferential thermal rectification strength displays a linear dependence on the bending coefficient of the nanostructure. Surface kinks are relatively inconsequential on its circumferential mode of conduction, as compared to its axial sense. The circumferential conductivity in the diffusive regime is calculated to be approximately 10 W/m K, while the axial conductivity is more than tenfold of this value. All nanotori with different toroidal characters show excellent thermal stability at extremely high temperatures approaching 3400 K. With consideration to its favourable properties, a thermal shield made up of a parallel row of nanotori is proposed as a nanoscale thermal insulation device.

Highly enhanced low temperature discharge capacity of LiNi1/3Co1/3Mn1/3O2 with lithium boron oxide glass modification

NASA Astrophysics Data System (ADS)

Tan, ShuangYuan; Wang, Lei; Bian, Liang; Xu, JinBao; Ren, Wei; Hu, PengFei; Chang, AiMin

2015-03-01

Although lithium ion battery is known to be an excellent renewable energy provider in electronic markets further application of it has been limited by its notoriously poor performance at low temperature, especially below -20 °C. In this paper, the electrochemical performance of the LiNi1/3Co1/3Mn1/3O2 cathode materials coated by lithium boron oxide (LBO) glass was investigated at a temperature range from 20 to -40 °C. The results show that the LBO coating not only helps to improve the discharge capacity of LiNi1/3Co1/3Mn1/3O2 at room temperature but also increase the discharge capacity retention of the LiNi1/3Co1/3Mn1/3O2 from 22.5% to 57.8% at -40 °C. Electrochemical impedance spectra results reveal that the LBO coating plays an important role in reducing the charge-transfer resistance on the electrolyte-electrode interfaces and improving lithium ion diffusion coefficients. The mechanism associated with the change of the structure and electrical properties are discussed in detail.

A Simple Kinetic Model for the Growth of Fe2B Layers on AISI 1026 Steel During the Powder-pack Boriding

NASA Astrophysics Data System (ADS)

Flores-Rentería, M. A.; Ortiz-Domínguez, M.; Keddam, M.; Damián-Mejía, O.; Elias-Espinosa, M.; Flores-González, M. A.; Medina-Moreno, S. A.; Cruz-Avilés, A.; Villanueva-Ibañez, M.

2015-02-01

This work focused on the determination of boron diffusion coefficient through the Fe2B layers on AISI 1026 steel using a mathematical model. The suggested model solves the mass balance equation at the (Fe2B/substrate) interface. This thermochemical treatment was carried out in the temperature range of 1123-1273 K for a treatment time ranging from 2 to 8 h. The generated boride layers were characterized by different experimental techniques such as light optical microscopy, scanning electron microscopy, XRD analysis and the Daimler-Benz Rockwell-C indentation technique. As a result, the boron activation energy for AISI 1026 steel was estimated as 178.4 kJ/mol. Furthermore, this kinetic model was validated by comparing the experimental Fe2B layer thickness with the predicted one at a temperature of 1253 K for 5 h of treatment. A contour diagram relating the layer thickness to the boriding parameters was proposed to be used in practical applications.

Erosion and re-deposition of lithium and boron coatings under high-flux plasma bombardment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abrams, Tyler Wayne

2015-01-01

Lithium and boron coatings are applied to the walls of many tokamaks to enhance performance and protect the underlying substrates. Li and B-coated high-Z substrates are planned for use in NSTX-U and are a candidate plasma-facing component (PFC) for DEMO. However, previous measurements of Li evaporation and thermal sputtering on low-flux devices indicate that the Li temperature permitted on such devices may be unacceptably low. Thus it is crucial to characterize gross and net Li erosion rates under high-flux plasma bombardment. Additionally, no quantitative measurements have been performed of the erosion rate of a boron-coated PFC during plasma bombardment. Amore » realistic model for the compositional evolution of a Li layer under D bombardment was developed that incorporates adsorption, implantation, and diffusion. A model was developed for temperature-dependent mixed-material Li-D erosion that includes evaporation, physical sputtering, chemical sputtering, preferential sputtering, and thermal sputtering. The re-deposition fraction of a Li coating intersecting a linear plasma column was predicted using atomic physics information and by solving the Li continuity equation. These models were tested in the Magnum-PSI linear plasma device at ion fluxes of 10^23-10^24 m^-2 s^-1 and Li surface temperatures less than 800 degrees C. Li erosion was measured during bombardment with a neon plasma that will not chemically react with Li and the results agreed well with the erosion model. Next the ratio of the total D fluence to the areal density of the Li coating was varied to quantify differences in Li erosion under D plasma bombardment as a function of the D concentration. The ratio of D/Li atoms was calculated using the results of MD simulations and good agreement is observed between measurements and the predictions of the mixed-material erosion model. Li coatings are observed to disappear from graphite much faster than from TZM Mo, indicating that fast Li diffusion into the bulk graphite substrate occurred, as predicted. Li re-deposition fractions very close to unity are observed in Magnum-PSI, as predicted by modeling. Finally, predictions of Li coating lifetimes in the NSTX-U divertor are calculated. The gross erosion rate of boron coatings was also measured for the first time in a high-flux plasma device.« less

Mixed Network Former Effect on Structure, Physical Properties, and Bioactivity of 45S5 Bioactive Glasses: An Integrated Experimental and Molecular Dynamics Simulation Study.

PubMed

Lu, Xiaonan; Deng, Lu; Huntley, Caitlin; Ren, Mengguo; Kuo, Po-Hsuen; Thomas, Ty; Chen, Jonathan; Du, Jincheng

2018-03-08

Boron-containing bioactive glasses display a strong potential in various biomedical applications lately due to their controllable dissolution rates. In this paper, we prepared a series of B 2 O 3 /SiO 2 -substituded 45S5 bioactive glasses and performed in vitro biomineralization tests with both simulated body fluid and K 2 HPO 4 solutions to evaluate the bioactivities of these glasses as a function of boron oxide to silica substitution. The samples were examined with scanning electron microscopy, X-ray diffraction, and Fourier transform infrared spectrometry after immersing them in the two solutions (simulated body fluid and K 2 HPO 4 ) up to 3 weeks. It was found that introduction of boron oxide delayed the formation of hydroxyapatite, but all the glasses were shown to be bioactive. Molecular dynamics (MD) simulations were used to complement the experimental efforts to understand the structural changes due to boron oxide to silica substitution by using newly developed partial charge composition-dependent potentials. Local structures around the glass network formers, medium-range structural information, network connectivity, and self-diffusion coefficients of ions were elucidated from MD simulation. Relationships between boron content and glass properties such as structure, density, glass transition temperature, and in vitro bioactivity were discussed in light of both experimental and simulation results.

Etude des mecanismes de formation des microstructures lors du brasage isotherme de superalliages a base de nickel

NASA Astrophysics Data System (ADS)

Ruiz-Vargas, Jose

This thesis reports theoretical and experimental investigations carried out to understand the mechanisms of microstructure formation during isothermal brazing, produced by brazing Inconel 625 and MC2 nickel-based superalloys with filler metal BNi-2. Firstly, studies were made on pure Ni to interpret microstructure's formation with simplified alloy chemistry. Microstructure formation have been studied when varying time at constant temperature (isothermal kinetics), but also when varying temperature for constant hold time (isochronal kinetics). The chemical composition and crystallography of the present phases have been identified, with the following results : (i) the fraction of dissolved base metal has been found proportional to the initial thickness of the brazing alloy, so that the composition of the liquid remains homogeneous with a precise initial equilibrium composition during the whole brazing process, (ii) the melting of the joint occurs in two steps : at lower temperature, it involves only partially melting, and boron diffusion in pure Ni leads to the precipitation of fine Ni3B borides at the interface ; in a second stage, at higher temperature, melting is complete and thermodynamic equilibrium requires significant dissolution of nickel, which also involves the dissolution of part of borides already formed. Secondly, nickel plating technique was used on Inconel 625 nickel-based superalloy. A thin layer of Ni with varying thickness, has been electrodeposited to observe the gradual dissolution of Inconel and microstructural features formation due to the presence of superalloy alloying elements. It has been observed that the nickel coating does not prevent precipitation in the base metal as boron diffuse rapidly through the coating width. In the intermediate nickel plating width, fragile precipitates of nickel borides have been observed, because the contribution of Inconel alloying elements to the melt was very limited. In absence of nickel plating on the superalloy, the formation of Nb and Cr-Mo borides phase has been observed. Efforts have been made to evaluate the accuracy of Boron measurement by energy dispersion X-ray spectroscopy (EDS) in the MC2 superalloy and BNi-2 filler metal. The most accurate method to quantify Boron using EDS is by composition difference. A precision of 5 at.% has been reached when using optimized data acquisition and post processing schemes. Ultimately, Electron Backscatter Diffraction (EBSD) combined with localized EDS analysis has been proven invaluable in conclusively identifying micrometer sized boride precipitates ; thus further improving the characterization of brazed Ni-based superalloys.

Thermoluminescent phosphor

DOEpatents

Lasky, Jerome B.; Moran, Paul R.

1978-01-01

A thermoluminescent phosphor comprising LiF doped with boron and magnesium is produced by diffusion of boron into a conventional LiF phosphor doped with magnesium. Where the boron dopant is made to penetrate only the outer layer of the phosphor, it can be used to detect shallowly penetrating radiation such as tritium beta rays in the presence of a background of more penetrating radiation.

Characterizations of the Core-Shell Structured MgB2/CARBON Fiber Synthesis by Rf-Sputtering and Thermal Evaporation

NASA Astrophysics Data System (ADS)

Park, Sung Chang; Lim, Yeong Jin; Lee, Tae-Keun; Kim, Cheol Jin

MgB2/carbon fibers have been synthesized by the combination of RF-sputtering of B and thermal evaporation of Mg, followed by co-evaporation. First, boron layer was deposited by RF-sputtering on the carbon fiber with average diameter of 7.1 μm. Later this coated layer of B was reacted with Mg vapor to transform into MgB2. Since the MgB2 reaction proceed with Mg diffusion into the boron layer, Mg vapor pressure and the diffusion time had to be controlled precisely to secure the complete reaction. Also the deposition rate of each element was controlled separately to obtain stoichiometric MgB2, since Mg was evaporated by thermal heating and B by sputtering system. The sintered B target was magnetron sputtered at the RF-power of ~200 W, which corresponded to the deposition rate of ~3.6 Å/s. With the deposition rate of B fixed, the vapor pressure of Mg was controlled by varying the temperature of tungsten boat with heating element control unit between 100 and 900°C. The MgB2 layers with the thickness of 200-950 nm could be obtained and occasionally MgO appeared as a second phase. Superconducting transition temperatures were measured around ~38 K depending on the deposition condition.

Influence of laser alloying with boron and niobium on microstructure and properties of Nimonic 80A-alloy

NASA Astrophysics Data System (ADS)

Makuch, N.; Piasecki, A.; Dziarski, P.; Kulka, M.

2015-12-01

Ni-base superalloys were widely used in aeronautics, chemical and petrochemical industries due to their high corrosion resistance, high creep and rupture strength at high temperature. However, these alloys were not considered for applications in which conditions of appreciable mechanical wear were predominant. The diffusion boriding provided suitable protection against wear. Unfortunately, this process required long duration and high temperature. In this study, instead of the diffusion process, the laser alloying with boron and niobium was used in order to produce the hard and wear resistant layer on Nimonic 80A-alloy. The laser-alloying was carried out as a two-step process. First, the external cylindrical surface of specimens was pre-placed with a paste containing boron and niobium. Then, the pre-placed coating and the thin surface layer of the substrate were re-melted by a laser beam. The high laser beam power (P=1.56 kW) and high averaging irradiance (E=49.66 kW/cm2) provided the thick laser re-melted zone. The laser-borided layers were significantly thicker (470 μm) in comparison with the layers obtained as a consequence of the diffusion boriding. Simultaneously, the high overlapping of multiple laser tracks (86%) caused that the laser-alloyed layer was uniform in respect of the thickness. The produced layer consisted of nickel borides (Ni3B, Ni2B, Ni4B3, NiB), chromium borides (CrB, Cr2B), niobium borides (NbB2, NbB) and Ni-phase. The presence of hard borides caused the increase in microhardness up to 1000 HV in the re-melted zone. However, the measured values were lower than those-characteristic of niobium borides, chromium borides and nickel borides. The presence of the soft Ni-phase in re-melted zone was the reason for such a situation. After laser alloying, the significant increase in abrasive wear resistance was also observed. The mass wear intensity factor, as well as the relative mass loss of the laser-alloyed specimens, was over 10 times smaller in comparison with untreated Nimonic 80A-alloy.

Biodistribution of the boron carriers boronophenylalanine (BPA) and/or decahydrodecaborate (GB-10) for Boron Neutron Capture Therapy (BNCT) in an experimental model of lung metastases.

PubMed

Trivillin, V A; Garabalino, M A; Colombo, L L; González, S J; Farías, R O; Monti Hughes, A; Pozzi, E C C; Bortolussi, S; Altieri, S; Itoiz, M E; Aromando, R F; Nigg, D W; Schwint, A E

2014-06-01

BNCT was proposed for the treatment of diffuse, non-resectable tumors in the lung. We performed boron biodistribution studies with 5 administration protocols employing the boron carriers BPA and/or GB-10 in an experimental model of disseminated lung metastases in rats. All 5 protocols were non-toxic and showed preferential tumor boron uptake versus lung. Absolute tumor boron concentration values were therapeutically useful (25-76ppm) for 3 protocols. Dosimetric calculations indicate that BNCT at RA-3 would be potentially therapeutic without exceeding radiotolerance in the lung. © 2013 Published by Elsevier Ltd.

Biodistribution of the boron carriers boronophenylalanine (BPA) and/or decahydrodecaborate (GB-10) for Boron Neutron Capture Therapy (BNCT) in an experimental model of lung metastases

DOE Office of Scientific and Technical Information (OSTI.GOV)

D.W. Nigg; Various Others

BNCT was proposed for the treatment of diffuse, non-resectable tumors in the lung. We performed boron biodistribution studies with 5 administration protocols employing the boron carriers BPA and/or GB-10 in an experimental model of disseminated lung metastases in rats. All 5 protocols were non-toxic and showed preferential tumor boron uptake versus lung. Absolute tumor boron concentration values were therapeutically useful (25–76 ppm) for 3 protocols. Dosimetric calculations indicate that BNCT at RA-3 would be potentially therapeutic without exceeding radiotolerance in the lung.

Development of lithium diffused radiation resistant solar cells, part 2

NASA Technical Reports Server (NTRS)

Payne, P. R.; Somberg, H.

1971-01-01

The work performed to investigate the effect of various process parameters on the performance of lithium doped P/N solar cells is described. Effort was concentrated in four main areas: (1) the starting material, (2) the boron diffusion, (3) the lithium diffusion, and (4) the contact system. Investigation of starting material primarily involved comparison of crucible grown silicon (high oxygen content) and Lopex silicon (low oxygen content). In addition, the effect of varying growing parameters of crucible grown silicon on lithium cell output was also examined. The objective of the boron diffusion studies was to obtain a diffusion process which produced high efficiency cells with minimal silicon stressing and could be scaled up to process 100 or more cells per diffusion. Contact studies included investigating sintering of the TiAg contacts and evaluation of the contact integrity.

X-ray diffuse scattering study of the kinetics of stacking fault growth and annihilation in boron-implanted silicon

NASA Astrophysics Data System (ADS)

Luebbert, D.; Arthur, J.; Sztucki, M.; Metzger, T. H.; Griffin, P. B.; Patel, J. R.

2002-10-01

Stacking faults in boron-implanted silicon give rise to streaks or rods of scattered x-ray intensity normal to the stacking fault plane. We have used the diffuse scattering rods to follow the growth of faults as a function of time when boron-implanted silicon is annealed in the range of 925 to 1025 degC. From the growth kinetics we obtain an activation energy for interstitial migration in silicon: EI=1.98plus-or-minus0.06 eV. Fault intensity and size versus time results indicate that faults do not shrink and disappear, but rather are annihilated by a dislocation reaction mechanism.

Method of preparing a thermoluminescent phosphor

DOEpatents

Lasky, Jerome B.; Moran, Paul R.

1979-01-01

A thermoluminescent phosphor comprising LiF doped with boron and magnesium is produced by diffusion of boron into a conventional LiF phosphor doped with magnesium. Where the boron dopant is made to penetrate only the outer layer of the phosphor, it can be used to detect shallowly penetrating radiation such as tritium beta ays in the presence of a background of more penetrating radiation.

Boron removal from aqueous solution by direct contact membrane distillation.

PubMed

Hou, Deyin; Wang, Jun; Sun, Xiangcheng; Luan, Zhaokun; Zhao, Changwei; Ren, Xiaojing

2010-05-15

The removal of boron from aqueous solution by direct contact membrane distillation (DCMD) was studied with self-prepared polyvinylidene fluoride (PVDF) hollow fiber membranes in the present work. The effect of pH, boron concentration, temperature and salt concentration of the feed solution on the boron rejection was investigated. The experimental results indicated that boron rejection was less dependent on the feed pH and salt concentration. DCMD process had high boron removal efficiency (>99.8%) and the permeate boron was below the maximum permissible level even at feed concentration as high as 750 mg/L. Although the permeate flux was enhanced exponentially with the feed temperature increasing, the influence of feed temperature on the boron rejection could be neglected. Finally, the natural groundwater sample containing 12.7 mg/L of boron was treated by DCMD process. The permeate boron kept below 20 microg/L whether the feed was acidified or not, but pre-acidification was helpful to maintain the permeate flux stability. All the experimental results indicated that DCMD could be efficiently used for boron removal from aqueous solution. Copyright (c) 2009 Elsevier B.V. All rights reserved.

Low Temperature Processing of Boron Carbide Cement Composite for Tough, Wear Resistant Structures

DTIC Science & Technology

1997-12-15

TITLE AND SUBTITLE Low Temperature Processing of Boron Carbide Cement Composite for Tough, Wear Resistant Structures 6. AUTHOR(S) Kristen J. Law...project has developed a low temperature polymer ceramic composite consisting of boron carbide layers bonded by cement, laminated with polymer...composite have been shown to compare favorably to those of partially sintered boron carbide. Applications for this material have been identified in

Neutron absorbing room temperature vulcanizable silicone rubber compositions

DOEpatents

Zoch, Harold L.

1979-11-27

A neutron absorbing composition comprising a one-component room temperature vulcanizable silicone rubber composition or a two-component room temperature vulcanizable silicone rubber composition in which the composition contains from 25 to 300 parts by weight based on the base silanol or vinyl containing diorganopolysiloxane polymer of a boron compound or boron powder as the neutron absorbing ingredient. An especially useful boron compound in this application is boron carbide.

Trap controlled minority-carrier mobility in heavily doped silicon

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Lindholm, F. A.; Sah, C. T.

1985-01-01

The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (about 10 to the 20th per cu cm) Si(Si:As) was investigated in the temperature range, 20 - 350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed behavior. The activation energy is about 10 meV, which suggests that the localized states originate from band tails but does not rule out trapping at boron atoms in the compensated n(+) region.

Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Müller, Ralph, E-mail: ralph.mueller@ise.fraunhofer.de; Schrof, Julian; Reichel, Christian

2014-09-08

The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implantedmore » phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674 mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.« less

Reduction in number of crystal defects in a p+Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

NASA Astrophysics Data System (ADS)

Murakoshi, Atsushi; Harada, Tsubasa; Miyano, Kiyotaka; Harakawa, Hideaki; Aoyama, Tomonori; Yamashita, Hirofumi; Kohyama, Yusuke

2017-09-01

To reduce the number of crystal defects in a p+Si diffusion layer by a low-thermal-budget annealing process, we have examined crystal recovery in the amorphous layer formed by the cryogenic implantation of germanium and boron combined with sub-melt laser spike annealing (LSA). The cryogenic implantation at -150 °C is very effective in suppressing vacancy clustering, which is advantageous for rapid crystal recovery during annealing. The crystallinity after LSA is shown to be very high and comparable to that after rapid thermal annealing (RTA) owing to the cryogenic implantation, although LSA is a low-thermal-budget annealing process that can suppress boron diffusion effectively. It is also shown that in the p+Si diffusion layer, there is high contact resistance due to the incomplete formation of a metal silicide contact, which originates from insufficient outdiffusion of surface contaminants such as fluorine. To widely utilize the marked reduction in the number of crystal defects, sufficient removal of surface contaminants will be required in the low-thermal-budget process.

The Effect of Boronizing on Metallic Alloys for Automotive Applications

NASA Astrophysics Data System (ADS)

Petrova, Roumiana S.; Suwattananont, Naruemon; Samardzic, Veljko

2008-06-01

In this study the wear resistance, corrosion resistance, and oxidation resistance of boronized metallic alloys were investigated. Thermochemical treatment was performed by powder pack boronizing process at temperature 850-950 °C for 4 h. Saw-tooth morphology and smooth interface microstructures were observed with an optical microscope; microhardness was measured across the coating depth. The phases present in the boron coatings depend on the substrate material. High-temperature oxidation resistance was investigated and it was found that boron coating on ferrous alloys can resist temperatures up to 800 °C. The corrosion resistance of the boronized samples was improved and the corrosion rate was calculated for boronized and plain specimens. Wear testing was conducted by following the procedures of ASTM G99, ASTM D2526, and ASTM D4060. The obtained experimental results revealed that boronizing significantly improves the wear-resistance, corrosion-resistance, and oxidation resistance of metallic alloys.

Origin and roles of oxygen impurities in hexagonal boron nitride epilayers

NASA Astrophysics Data System (ADS)

Grenadier, S. J.; Maity, A.; Li, J.; Lin, J. Y.; Jiang, H. X.

2018-04-01

Photoluminescence emission spectroscopy and electrical transport measurements have been employed to study the origin and roles of oxygen impurities in hexagonal boron nitride (h-BN) epilayers grown on sapphire substrates. The temperature dependence of the electrical resistivity revealed the presence of a previously unnoticed impurity level of about 0.6 eV in h-BN epilayers grown at high temperatures. The results suggested that in addition to the common nitrogen vacancy (VN) shallow donors in h-BN, oxygen impurities diffused from sapphire substrates during high temperature growth also act as substitutional donors (ON). The presence of ON gives rise to an additional emission peak in the photoluminescence spectrum, corresponding to a donor-acceptor pair recombination involving the ON donor and the CN (carbon occupying nitrogen site) deep level acceptor. Moreover, due to the presence of ON donors, the majority charge carrier type changed to electrons in epilayers grown at high temperatures, in contrast to typical h-BN epilayers which naturally exhibit "p-type" character. The results provided a more coherent picture for common impurities/defects in h-BN as well as a better understanding of the growth mediated impurities in h-BN epilayers, which will be helpful for finding possible ways to further improve the quality and purity of this emerging material.

Thermal expansion of boron subnitrides

NASA Astrophysics Data System (ADS)

Cherednichenko, Kirill A.; Gigli, Lara; Solozhenko, Vladimir L.

2018-07-01

The lattice parameters of two boron subnitrides, B13N2 and B50N2, have been measured as a function of temperature between 298 and 1273 K, and the corresponding thermal expansion coefficients have been determined. Thermal expansion of both boron subnitrides was found to be quasi-linear, and the volume thermal expansion coefficients of B50N2 (15.7 (2) × 10-6 K-1) and B13N2 (21.3 (2) × 10-6 K-1) are of the same order of magnitude as those of boron-rich compounds with structure related to α-rhombohedral boron. For both boron subnitrides no temperature-induced phase transitions have been observed in the temperature range under study.

Boron nitride nanotube as a delivery system for platinum drugs: Drug encapsulation and diffusion coefficient prediction.

PubMed

Khatti, Zahra; Hashemianzadeh, Seyed Majid

2016-06-10

Molecular dynamics (MD) simulation has been applied to investigate a drug delivery system based on boron nitride nanotubes, particularly the delivery of platinum-based anticancer drugs. For this propose, the behavior of carboplatin drugs inserted in boron nitride nanotubes (BNNT) as a carrier was studied. The diffusion rate of water molecules and carboplatin was investigated inside functionalized and pristine boron nitride nanotubes. The penetration rate of water and drug in functionalized BNNT was higher than that in pristine BNNT due to favorable water-mediated hydrogen bonding in hydroxyl edge-functionalized BNNT. Additionally, the encapsulation of multiple carboplatin drugs inside functionalized boron nitride nanotubes with one to five drug molecules confined inside the nanotube cavity was examined. At high drug loading, the hydrogen bond formation between adjacent drugs and the non-bonded van der Waals interaction between carboplatin and functionalized BNNT inner surface were found to be influential in drug displacement within the functionalized BNNT cavity for higher drug-loading capacity. Copyright © 2016 Elsevier B.V. All rights reserved.

An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation.

PubMed

Yilmaz, A Erdem; Boncukcuoğlu, Recep; Kocakerim, M Muhtar

2007-06-01

In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0 mA/cm(2), initial boron concentration 100mg/L and solution temperature 293 K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following; [formula in text]. Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

Controlled growth of semiconductor crystals

DOEpatents

Bourret-Courchesne, Edith D.

1992-01-01

A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

Controlled growth of semiconductor crystals

DOEpatents

Bourret-Courchesne, E.D.

1992-07-21

A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

Influencing factors and kinetics analysis on the leaching of iron from boron carbide waste-scrap with ultrasound-assisted method.

PubMed

Li, Xin; Xing, Pengfei; Du, Xinghong; Gao, Shuaibo; Chen, Chen

2017-09-01

In this paper, the ultrasound-assisted leaching of iron from boron carbide waste-scrap was investigated and the optimization of different influencing factors had also been performed. The factors investigated were acid concentration, liquid-solid ratio, leaching temperature, ultrasonic power and frequency. The leaching of iron with conventional method at various temperatures was also performed. The results show the maximum iron leaching ratios are 87.4%, 94.5% for 80min-leaching with conventional method and 50min-leaching with ultrasound assistance, respectively. The leaching of waste-scrap with conventional method fits the chemical reaction-controlled model. The leaching with ultrasound assistance fits chemical reaction-controlled model, diffusion-controlled model for the first stage and second stage, respectively. The assistance of ultrasound can greatly improve the iron leaching ratio, accelerate the leaching rate, shorten leaching time and lower the residual iron, comparing with conventional method. The advantages of ultrasound-assisted leaching were also confirmed by the SEM-EDS analysis and elemental analysis of the raw material and leached solid samples. Copyright © 2017 Elsevier B.V. All rights reserved.

Optical spectroscopy and photo modification of individual single-photon emitters in hexagonal boron nitride

NASA Astrophysics Data System (ADS)

Jayakumar, Harishankar; Shotan, Zav; Considine, Christopher; Mazkoit, Mažena; Fedder, Helmut; Wrachtrup, Joerg; Alkauskas, Audrius; Doherty, Marcus; Menon, Vinod; Meriles, Carlos

Fluorescent defects recently observed under ambient conditions in hexagonal boron nitride (h-BN) promise to open novel opportunities for the implementation of on-chip photonic devices that rely on identical photons from single emitters. Here we report on the room temperature photo-luminescence dynamics of individual emitters in multilayer h-BN flakes exposed to blue laser light. Comparison of optical spectra recorded at successive times reveals considerable spectral diffusion, possibly the result of slowly fluctuating, trapped-carrier-induced stark shifts. Large spectral jumps - reaching up to 100 nm - followed by bleaching are observed in most cases upon prolonged exposure to blue light, an indication of one-directional, photo-chemical changes likely taking place on the flake surface. Remarkably, only a fraction of the observed emitters also fluoresces on green illumination suggesting a more complex optical excitation dynamics than previously anticipated and raising questions on the physical nature of the atomic defect at play.

Properties of vacuum-evaporated boron films

NASA Technical Reports Server (NTRS)

Feakes, F.

1973-01-01

The work on the properties of thin boron films made by vacuum evaporation of elemental boron using an electron beam as the energy source is reported. The program aimed at characterizing the properties of vacuum evaporated films. The work was directed toward those variables considered to be important in affecting the tensile strength of the boron films. In general, the thickness of the films was less than 0.002 in. The temperature of the substrate on which the boron was condensed was found to be most important. Three distinctly different forms of boron deposit were produced. Although the transition temperature was not sharply defined, at substrate temperatures of less than approximately 600 deg C the boron deposits were amorphous to X-ray. If the substrate were highly polished, the deposits were black and mirror-like. For substrates with coefficients of thermal expansion close to that of boron, the deposits were then continuous and uncracked. The studies suggest that the potential continues to exist for film-type composites to have both high strength and high modulus.

Evolution of anisotropy in bcc Fe distorted by interstitial boron

NASA Astrophysics Data System (ADS)

Gölden, Dominik; Zhang, Hongbin; Radulov, Iliya; Dirba, Imants; Komissinskiy, Philipp; Hildebrandt, Erwin; Alff, Lambert

2018-01-01

The evolution of magnetic anisotropy in bcc Fe as a function of interstitial boron atoms was investigated in thin films grown by molecular beam epitaxy. The thermodynamic nonequilibrium conditions during film growth allowed one to stabilize an interstitial boron content of about 14 at .% accompanied by lattice tetragonalization. The c /a ratio scaled linearly with the boron content up to a maximum value of 1.05 at 300 °C substrate growth temperature, with a room-temperature magnetization of. In contrast to nitrogen interstitials, the magnetic easy axis remained in-plane with an anisotropy of approximately -5.1 ×106erg /cm3 . Density functional theory calculations using the measured lattice parameters confirm this value and show that boron local ordering indeed favors in-plane magnetization. Given the increased temperature stability of boron interstitials as compared to nitrogen interstitials, this study will help to find possible ways to manipulate boron interstitials into a more favorable local order.

Method for wetting a boron alloy to graphite

DOEpatents

Storms, E.K.

1987-08-21

A method is provided for wetting a graphite substrate and spreading a a boron alloy over the substrate. The wetted substrate may be in the form of a needle for an effective ion emission source. The method may also be used to wet a graphite substrate for subsequent joining with another graphite substrate or other metal, or to form a protective coating over a graphite substrate. A noneutectic alloy of boron is formed with a metal selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt) with excess boron, i.e., and atomic percentage of boron effective to precipitate boron at a wetting temperature of less than the liquid-phase boundary temperature of the alloy. The alloy is applied to the substrate and the graphite substrate is then heated to the wetting temperature and maintained at the wetting temperature for a time effective for the alloy to wet and spread over the substrate. The excess boron is evenly dispersed in the alloy and is readily available to promote the wetting and spreading action of the alloy. 1 fig.

In situ TEM study of electron-beam radiation induced boron diffusion and effects on phase and microstructure evolution in nanostructured CoFeB/SiO2 thin film

NASA Astrophysics Data System (ADS)

Liu, B. H.; Teo, H. W.; Mo, Z. H.; Mai, Z. H.; Lam, J.; Xue, J. M.; Zhao, Y. Z.; Tan, P. K.

2017-01-01

Using in situ transmission electron microscopy (TEM), we studied boron diffusion and segregation in CoFeB/SiO2 nanostructured thin film stacks. We also investigated how these phenomena affected the phase and microstructure of CoFeB thin films under electron beam irradiation at 300 kV. A unique phase transformation was observed in CoFeB thin films under high-dose electron irradiation, from a polycrystalline Co3Fe to a unilateral amorphous phase of Co3Fe and nanocrystalline FexCo23-xB6. The unilateral amorphization of the Co3Fe film showed an electron-dose-rate sensitivity with a threshold dose rate. Detailed in situ TEM studies revealed that the unilateral amorphization of the Co3Fe film arose from boron segregation at the bottom of the Co3Fe thin film induced by radiation-enhanced diffusion of boron atoms that were displaced by electron knock-on effects. The radiation-induced nanocrystallization of FexCo23-xB6 was also found to be dose-rate sensitive with a higher electron beam current leading to earlier nucleation and more rapid grain growth. The nanocrystallization of FexCo23-xB6 occurred preferentially at the CoFeB/SiO2 interface. Kinetic studies by in situ TEM revealed the surface crystallization and diffusion-controlled nucleation and grain growth mechanisms. The radiation-enhanced atomic diffusivity and high-concentration of radiation-induced point defects at the Co3Fe/SiO2 interface enhanced the local short-range ordering of Fe, Co, and B atoms, favoring nucleation and grain growth of FexCo23-xB6 at the interface.

Origin of reverse annealing in radiation-damaged silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.

1980-01-01

The paper employs relative defect concentrations, energy levels, capture cross sections, and minority carrier diffusion lengths in order to identify the defect responsible for the reverse annealing observed in a radiation damaged n(+)/p silicon solar cell. It is reported that the responsible defect, with the energy level at +0.30 eV, has been tentatively identified as boron-oxygen-vacancy complex. In conclusion, it is shown that removal of this defect could result in significant cell recovery when annealing at temperatures well below the currently required 400 C.

Compressive creep behavior of alloys based on B2 FeAl

NASA Technical Reports Server (NTRS)

Mantravadi, N.; Vedula, K.; Gaydosh, D.; Titran, R. H.

1986-01-01

Alloys based on FeAl are attractive alternate materials for environmental resistance at intermediate temperatures. Addition of small amounts of Nb, Hf, Ta, Mo, Zr, and B were shown to improve the compressive creep of this alloy at 1100 K. Boron, in particular, was found to have a synergistic effect along with Zr in providing properties substantially better than the binary alloy. This improvement seems to be related to the higher activation energy found for this alloy, suggesting a modification in the diffusion behavior due to the alloying additions.

Compressive creep behavior of alloys based on B2 FeAl

NASA Technical Reports Server (NTRS)

Mantravadi, N.; Vedula, K.; Gaydosh, D.; Titran, R. H.

1987-01-01

Alloys based on FeAl are attractive alternative materials for environmental resistance at intermediate temperatures. Addition of small amounts of Nb, Hf, Ta, Mo, Zr, and B were shown to improve the compressive creep of this alloy at 1100 K. Boron, in particular, was found to have a synergistic effect along with Zr in providing properties substantially better than the binary alloy. This improvement seems to be related to the higher activation energy found for this alloy, suggesting a modification in the diffusion behavior due to the alloying additions.

Development of a method to extend by boron neutron capture process the therapeutic possibilities of a liver autograft

NASA Astrophysics Data System (ADS)

Pinelli, Tazio; Altieri, Saverio; Fossati, F.; Zonta, Aris; Prati, U.; Roveda, L.; Nano, Rosanna

1997-02-01

We present results on surgical technique, neutron filed and irradiation facility concerning the original treatment of the liver diffused metastases. Our method plans to irradiate the isolated organ at a thermal neutron field soon after having been explanted and boron enriched and before being grafted into the same donor. In particular the crucial point of boron uptake was investigated by a rat model with a relevant number of procedure. We give for the first time statistically significant results on the selective boron absorption by tumor tissues.

Evolution of thermo-physical properties and annealing of fast neutron irradiated boron carbide

NASA Astrophysics Data System (ADS)

Gosset, Dominique; Kryger, Bernard; Bonal, Jean-Pierre; Verdeau, Caroline; Froment, Karine

2018-03-01

Boron carbide is widely used as a neutron absorber in most nuclear reactors, in particular in fast neutron ones. The irradiation leads to a large helium production (up to 1022/cm3) together with a strong decrease of the thermal conductivity. In this paper, we have performed thermal diffusivity measurements and X-ray diffraction analyses on boron carbide samples coming from control rods of the French Phenix LMFBR reactor. The burnups range from 1021 to 8.1021/cm3. We first confirm the strong decrease of the thermal conductivity at the low burnup, together with high microstructural modifications: swelling, large micro-strains, high defects density, and disordered-like material conductivity. We observe the microstructural parameters are highly anisotropic, with high micro-strains and flattened coherent diffracting domains along the (00l) direction of the hexagonal structure. Performing heat treatments up to high temperature (2200 °C) allows us to observe the material thermal conductivity and microstructure restoration. It then appears the thermal conductivity healing is correlated to the micro-strain relaxation. We then assume the defects responsible for most of the damage are the helium bubbles and the associated stress fields.

Effects of Heat Treatment on SiC-SiC Ceramic Matrix Composites

NASA Astrophysics Data System (ADS)

Knauf, Michael W.

Residual stresses resulting from the manufacturing process found within a silicon carbide/silicon carbide (SiC/SiC) ceramic matrix composite were thoroughly investigated through the use of high-energy X-ray diffraction and Raman microspectroscopy. The material system studied was a Rolls-Royce composite produced with Hi-Nicalon fibers woven into a five harness satin weave, coated with boron nitride and silicon carbide interphases, and subsequently infiltrated with silicon carbide particles and a silicon matrix. Constituent stress states were measured before, during, and after heat treatments ranging from 900 °C to 1300 °C for varying times between one and sixty minutes. Stress determination methods developed through these analyses can be utilized in the development of ceramic matrix composites and other materials employing boron-doped silicon. X-ray diffraction experiments were performed at the Argonne National Laboratory Advanced Photon Source to investigate the evolution of constituent stresses through heat treatment, and determine how stress states are affected at high temperature through in situ measurements during heat treatments up to 1250 °C for 30 minutes. Silicon carbide particles in the as-received condition exhibited a nearly isotropic stress state with average tensile stresses of approximately 300 MPa. The silicon matrix exhibited a complimentary average compressive stress of approximately 300 MPa. Strong X-ray diffraction evidence is presented demonstrating solid state boron diffusion and increased boron solubility found in silicon throughout heat treatment. While the constituent stress states did evolve through the heat treatment cycles, including approaching nearly stress-free conditions at temperatures close to the manufacturing temperature, no permanent relaxation of stress was observed. Raman spectroscopy was utilized to investigate stresses found within silicon carbide particles embedded within the matrix and the silicon matrix as an alternate method of measurement. The stresses determined through Raman spectroscopy were comparable to those determined through X-ray diffraction. Neither silicon carbide particles nor silicon were significantly affected through heat treatment, corroborating the X-ray diffraction results. Silicon present near fibers exhibited less compressive stress than the majority of silicon found throughout the matrix. Measurements were taken in situ and ex situ to determine the temporal evolution of the stress state at various temperatures. Heat treatments up to 1300 °C for one hour failed to produce significant changes in the residual stress state of the composite constituents. A strong trend was identified in the Raman silicon signal manifesting a continuously decreasing wavenumber with increasing heat treatment temperature between 1100 °C and 1300 °C in timeframes of less than one minute. This was found to be due to a continuously increasing electronic activation of boron within the silicon matrix, stemming from an increase of boron atoms occupying substitutional silicon lattice sites while covalently bonded to surrounding silicon. A methodology to determine the residual stress state of silicon exhibiting varying degrees of boron dopant is proposed by accounting for the changes in the Raman profile parameters. This method also allows for observing activated boron segregation in various matrix areas; wavenumber gradients in these areas exist which have been misconstrued in literature as large variations in stress, while in fact the variability is likely relatively benign.

Rapid transporter regulation prevents substrate flow traffic jams in boron transport

PubMed Central

Sotta, Naoyuki; Duncan, Susan; Tanaka, Mayuki; Sato, Takafumi

2017-01-01

Nutrient uptake by roots often involves substrate-dependent regulated nutrient transporters. For robust uptake, the system requires a regulatory circuit within cells and a collective, coordinated behaviour across the tissue. A paradigm for such systems is boron uptake, known for its directional transport and homeostasis, as boron is essential for plant growth but toxic at high concentrations. In Arabidopsis thaliana, boron uptake occurs via diffusion facilitators (NIPs) and exporters (BORs), each presenting distinct polarity. Intriguingly, although boron soil concentrations are homogenous and stable, both transporters manifest strikingly swift boron-dependent regulation. Through mathematical modelling, we demonstrate that slower regulation of these transporters leads to physiologically detrimental oscillatory behaviour. Cells become periodically exposed to potentially cytotoxic boron levels, and nutrient throughput to the xylem becomes hampered. We conclude that, while maintaining homeostasis, swift transporter regulation within a polarised tissue context is critical to prevent intrinsic traffic-jam like behaviour of nutrient flow. PMID:28870285

Rapid transporter regulation prevents substrate flow traffic jams in boron transport.

PubMed

Sotta, Naoyuki; Duncan, Susan; Tanaka, Mayuki; Sato, Takafumi; Marée, Athanasius Fm; Fujiwara, Toru; Grieneisen, Verônica A

2017-09-05

Nutrient uptake by roots often involves substrate-dependent regulated nutrient transporters. For robust uptake, the system requires a regulatory circuit within cells and a collective, coordinated behaviour across the tissue. A paradigm for such systems is boron uptake, known for its directional transport and homeostasis, as boron is essential for plant growth but toxic at high concentrations. In Arabidopsis thaliana , boron uptake occurs via diffusion facilitators (NIPs) and exporters (BORs), each presenting distinct polarity. Intriguingly, although boron soil concentrations are homogenous and stable, both transporters manifest strikingly swift boron-dependent regulation. Through mathematical modelling, we demonstrate that slower regulation of these transporters leads to physiologically detrimental oscillatory behaviour. Cells become periodically exposed to potentially cytotoxic boron levels, and nutrient throughput to the xylem becomes hampered. We conclude that, while maintaining homeostasis, swift transporter regulation within a polarised tissue context is critical to prevent intrinsic traffic-jam like behaviour of nutrient flow.

Combustion Performance of a Staged Hybrid Rocket with Boron addition

NASA Astrophysics Data System (ADS)

Lee, D.; Lee, C.

2018-04-01

In this paper, the effect of boron on overall system specific impulse was investigated. Additionally, a series of combustion tests was carried out to analyze and evaluate the effect of boron addition on O/F variation and radial temperature profiles. To maintain the hybrid rocket engine advantages, upper limit of boron contents in solid fuel was set to be 10 wt%. The results also suggested that, when adding boron to solid fuel, it helped to provide more uniform radial temperature distribution and also to increase specific impulse by 3.2%.

CFD Modeling of Boron Removal from Liquid Silicon with Cold Gases and Plasma

NASA Astrophysics Data System (ADS)

Vadon, Mathieu; Sortland, Øyvind; Nuta, Ioana; Chatillon, Christian; Tansgtad, Merete; Chichignoud, Guy; Delannoy, Yves

2018-03-01

The present study focuses on a specific step of the metallurgical path of purification to provide solar-grade silicon: the removal of boron through the injection of H2O(g)-H2(g)-Ar(g) (cold gas process) or of Ar-H2-O2 plasma (plasma process) on stirred liquid silicon. We propose a way to predict silicon and boron flows from the liquid silicon surface by using a CFD model (©Ansys Fluent) combined with some results on one-dimensional diffusive-reactive models to consider the formation of silica aerosols in a layer above the liquid silicon. The comparison of the model with experimental results on cold gas processes provided satisfying results for cases with low and high concentrations of oxidants. This confirms that the choices of thermodynamic data of HBO(g) and the activity coefficient of boron in liquid silicon are suitable and that the hypotheses regarding similar diffusion mechanisms at the surface for HBO(g) and SiO(g) are appropriate. The reasons for similar diffusion mechanisms need further enquiry. We also studied the effect of pressure and geometric variations in the cold gas process. For some cases with high injection flows, the model slightly overestimates the boron extraction rate, and the overestimation increases with increasing injection flow. A single plasma experiment from SIMaP (France) was modeled, and the model results fit the experimental data on purification if we suppose that aerosols form, but it is not enough to draw conclusions about the formation of aerosols for plasma experiments.

CFD Modeling of Boron Removal from Liquid Silicon with Cold Gases and Plasma

NASA Astrophysics Data System (ADS)

Vadon, Mathieu; Sortland, Øyvind; Nuta, Ioana; Chatillon, Christian; Tansgtad, Merete; Chichignoud, Guy; Delannoy, Yves

2018-06-01

The present study focuses on a specific step of the metallurgical path of purification to provide solar-grade silicon: the removal of boron through the injection of H2O(g)-H2(g)-Ar(g) (cold gas process) or of Ar-H2-O2 plasma (plasma process) on stirred liquid silicon. We propose a way to predict silicon and boron flows from the liquid silicon surface by using a CFD model (©Ansys Fluent) combined with some results on one-dimensional diffusive-reactive models to consider the formation of silica aerosols in a layer above the liquid silicon. The comparison of the model with experimental results on cold gas processes provided satisfying results for cases with low and high concentrations of oxidants. This confirms that the choices of thermodynamic data of HBO(g) and the activity coefficient of boron in liquid silicon are suitable and that the hypotheses regarding similar diffusion mechanisms at the surface for HBO(g) and SiO(g) are appropriate. The reasons for similar diffusion mechanisms need further enquiry. We also studied the effect of pressure and geometric variations in the cold gas process. For some cases with high injection flows, the model slightly overestimates the boron extraction rate, and the overestimation increases with increasing injection flow. A single plasma experiment from SIMaP (France) was modeled, and the model results fit the experimental data on purification if we suppose that aerosols form, but it is not enough to draw conclusions about the formation of aerosols for plasma experiments.

Development and pilot line production of lithium doped silicon solar cells

NASA Technical Reports Server (NTRS)

Payne, P. A.

1972-01-01

The work performed over the period of September 1971 to August 1972 to develop production processes for fabrication of lithium doped P/N cells is described. The BCl3 diffusion without 02 was selected as the optimum diffusion process for fabrication of lithium doped cells. An 8-2-7 (warm up - deposition - drive-in time in minutes) diffusion schedule at 1055 C was used for the first two lots (300 cells each) delivered to JPL. Cell efficiencies ranged from 11.0 to 13.7% based on an AMO of 135.3 mW/sq cm. These high efficiencies were obtained using from 10 to 40 cells per boron diffusion; increasing the quantity beyond 40 resulted in lower outputs. At this point, the emphasis was placed on investigation of a BCl3 with 02 diffusion. Through evaluation of the effects of diffusion time and temperature, gas flow rates, and desposition plus drive-in vs. continuous deposition and no drive-in cycles, diffusion parameters were determined which produced short circuit currents of 136 + or - 4 mA for ten cells spaced along 12 in. of the diffusion boat. The quantity was increased to 60, 100, and 150 cell diffusions with no more variation in cell short circuit current than observed with 10 cells.

Boron/aluminum skins for the DC-10 aft pylon

NASA Technical Reports Server (NTRS)

Elliott, S. Y.

1975-01-01

Boron/aluminum pylon boat tail skins were designed and fabricated and installed on the DC-10 aircraft for a 5-year flight service demonstration test. Inspection and tests of the exposed skins will establish the ability of the boron/aluminum composite to withstand long time flight service conditions, which include exposure to high temperatures, sonic fatigue, and flutter. The results of a preliminary testing program yield room temperature and elevated temperature data on the tension, compression, in-plane shear, interlaminar shear, bolt bearing, and tension fatigue properties of the boron/aluminum laminates. Present technology was used in the fabrication of the skins. Although maximum weight saving was not sought, weight of the constant thickness boron/aluminum skin is 26% less than the chemically milled titanium skin.

New processes and materials for ultraviolet detection with solid state devices

NASA Technical Reports Server (NTRS)

Chopra, D.

1977-01-01

The three major effects that degrade external responsivity of silicon from the 1/lambda theoretical curve for a quantum detector are: surface reflectance, surface recombination, and junction depth. Since the p-n junction must be very shallow, problems relating to surface are further enhanced. MOS type of processing is necessary. HCl oxides and numerous acid clean-ups are utilized in order to obtain a contamination free surface with low Qss levels. Stringent process controls such as CV shifts, spreading resistance measurements, thickness monitoring etc., are used to analyze the surface contaminations, surface mobile charges, surface concentrations, junction depth, oxide thickness etc. Low surface concentrations of 10 to the 18th atoms/cu cm are achieved by low temperature boron nitride depositions. Shallow junction depths of the order of a few tenths of a micron are achieved by low temperature controlled diffusions. In order to improve breakdown characteristics of these shallow junction devices, field plate and deep diffused p(+) ring geometries are used.

Methods of producing continuous boron carbide fibers

DOEpatents

Garnier, John E.; Griffith, George W.

2015-12-01

Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

Ordering mechanisms of periodic stripe arrays on boron-doped Si(100)

NASA Astrophysics Data System (ADS)

Ermanoski, Ivan; Kellogg, Gary; Bartelt, Norman

2009-03-01

We have used low energy electron microscopy to determine the factors that control the degree of order in self-assembled periodic stripe arrays on the atomically flat Si(100) with high boron doping. The stripes consist of extremely elongated vacancy islands of single atomic height, formed at ˜900C, confined in micrometer-sized pits. ``Perfect'' arrays of parallel stripes (in pits of up to ˜10um in size) were formed by allowing various defects to heal over relatively long periods of time. Sublimation was compensated for by an external Si doser, allowing observation of stripe evolution over the course of hours, with no net loss or gain of Si from the area of interest. Stripe formation and ordering mechanisms include spontaneous nucleation and growth of new islands, longitudinal splitting, as well as coarsening due to surface diffusion. Stripe periodicity depends on temperature, allowing for control of this property. Stripes are stable in a range of ˜100C, outside of which they assume the familiar shape of elongated islands, shaped by the anisotropy in step energy. Stripe order can be preserved to room temperature by quenching. References: [1] J.-F. Nielsen et al., Appl. Phys. Lett. 79 (2001) 3857

Nanostructure of tetrafunctional epoxy resins and composites: Correlation to moisture absorption properties

NASA Astrophysics Data System (ADS)

Bolan, Brett Andrew

The effect that changes in network topology, while maintaining a constant network polarity (i.e. thermodynamic driving force was kept constant), had upon the moisture absorption properties of an aerospace grade tetrafunctional epoxy (TGMDA) cured with multifunctional amines were investigated. Utilizing Positron Annihilation Lifetime Spectroscopy (PALS) to characterize the nanoscale structure of these epoxies, it was found that as the "static" hole volume (a measurement of packing defects at 0K) increased so did the equilibrium uptake. PALS studies of one of these resins cured to varying extents, found that this static amount increased with degree of cure indicating that the network becomes more open as a direct consequence of crosslinking. Polar groups, which are the attractive force for diffusion, are in the vicinity of these crosslinks, therefore it is believed that the increase in static hole volume results in exposing more polar groups for absorption. The diffusion coefficient, which is representative of the kinetic aspect of diffusion, was also investigated. It was discovered that the amount of nanohole volume in the polymer; whether the total, the static, or dynamic (i.e. thermally activated) does not correlate to the diffusion coefficient in anyway. Furthermore, at an isotherm the diffusion coefficients for all these materials were relatively constant. From this it is hypothesized that it is the similar sub-Tsb{g} motions of these resins which is the rate limiting step in diffusion. This was bolstered by the fact that the activation energy for diffusion and for the sub-Tsb{g} motions for these epoxies are of the same order of magnitude. The nanostructure of fiber reinforced epoxy composites (i.e. a boron/epoxy and a graphite/epoxy) were probed with the bulk PALS technique as well. It was observed that for the graphite/epoxy composite and its flash (i.e. no fibers present) cured under identical conditions, that the nanoholes in the composite were larger than those present in the flash at temperatures below the epoxy's Tsb{g}. Curiously the boron/epoxy composite and its flash showed an opposite trend. Several potential explanations were examined. The only viable explanation for the observed nanostructural differences between the flash and the resin in these composites utilizes a micromechanics approach involving the CTE mismatch between the fibers and the matrix material. In this approach it is proposed that the fibers in the composite act as a constraint, preventing the nanohole from freely contracting (upon cooling through Tsb{g}) in the axial direction, while Poisson's ratio forces the holes to contract more in the transverse direction than the unrestrained hole in the flash. Therefore the resultant nanoholes in the composite maybe elongated in the fiber direction and shortened in the transverse direction when below the curing temperature. When the PALS technique probed these elongated holes it averaged their dimensions (but weighted the shortest dimension more heavily), thereby yielding the observed results. Despite slightly smaller static holes in the boron/epoxy composite than its flash, no difference in equilibrium uptake was noticed. The diffusion coefficient for the epoxy resin in this composite was found to be an order of magnitude higher than its flash. Nanostructure is not believed to be the cause of this but rather the glass fiber scrim cloth utilized in the processing of the prepreg.

Effect of MoO3 on the synthesis of boron nitride nanotubes over Fe and Ni catalysts.

PubMed

Nithya, Jeghan Shrine Maria; Pandurangan, Arumugam

2012-05-01

Synthesis of boron nitride nanotubes at reduced temperature is important for industrial manufactures. In this study boron nitride nanotubes were synthesized by thermal evaporation method using B/Fe2O3/MoO3 and B/Ni2O3/MoO3 mixtures separately with ammonia as the nitrogen source. The growth of boron nitride nanotubes occurred at 1100 degrees C, which was relatively lower than other metal oxides assisted growth processes requiring higher than 1200 degrees C. MoO3 promoted formation of B2O2 and aided boron nitride nanotubes growth at a reduced temperature. The boron nitride nanotubes with bamboo shaped, nested cone structured and straight tubes like forms were evident from the high resolution transmission electron microscopy. Metallic Fe and Ni, formed during the process, were the catalysts for the growth of boron nitride nanotubes. Their formation was established by X-ray diffraction. FT Raman showed a peak due to B-N vibration of BNNTs close to 1370 cm(-1). Hence MoO3 assisted growth of boron nitride nanotubes is advantageous, as it significantly reduced the synthesis temperature.

Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riise, Heine Nygard, E-mail: h.n.riise@fys.uio.no; Azarov, Alexander; Svensson, Bengt G.

2015-07-13

Shallow, Boron (B)-doped p{sup +} emitters have been realized using spin-on deposition and Flash Lamp Annealing (FLA) to diffuse B into monocrystalline float zone Silicon (Si). The emitters extend between 50 and 140 nm in depth below the surface, have peak concentrations between 9 × 10{sup 19 }cm{sup –3} and 3 × 10{sup 20 }cm{sup –3}, and exhibit sheet resistances between 70 and 3000 Ω/□. An exceptionally large increase in B diffusion occurs for FLA energy densities exceeding ∼93 J/cm{sup 2} irrespective of 10 or 20 ms pulse duration. The effect is attributed to enhanced diffusion of B caused by Si interstitial injection following a thermally activated reaction betweenmore » the spin-on diffusant film and the silicon wafer.« less

Electromagnetic Torque in Tokamaks with Toroidal Asymmetries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Logan, Nikolas Christopher

2015-01-01

Lithium and boron coatings are applied to the walls of many tokamaks to enhance performance and protect the underlying substrates. Li and B-coated high-Z substrates are planned for use in NSTX-U and are a candidate plasma-facing component (PFC) for DEMO. However, previous measurements of Li evaporation and thermal sputtering on low-flux devices indicate that the Li temperature permitted on such devices may be unacceptably low. Thus it is crucial to characterize gross and net Li erosion rates under high-flux plasma bombardment. Additionally, no quantitative measurements have been performed of the erosion rate of a boron-coated PFC during plasma bombardment. Amore » realistic model for the compositional evolution of a Li layer under D bombardment was developed that incorporates adsorption, implantation, and diffusion. A model was developed for temperature-dependent mixed-material Li-D erosion that includes evaporation, physical sputtering, chemical sputtering, preferential sputtering, and thermal sputtering. The re-deposition fraction of a Li coating intersecting a linear plasma column was predicted using atomic physics information and by solving the Li continuity equation. These models were tested in the Magnum-PSI linear plasma device at ion fluxes of 10^23-10^24 m^-2 s^-1 and Li surface temperatures less than 800 degrees C. Li erosion was measured during bombardment with a neon plasma that will not chemically react with Li and the results agreed well with the erosion model. Next the ratio of the total D fluence to the areal density of the Li coating was varied to quantify differences in Li erosion under D plasma bombardment as a function of the D concentration. The ratio of D/Li atoms was calculated using the results of MD simulations and good agreement is observed between measurements and the predictions of the mixed-material erosion model. Li coatings are observed to disappear from graphite much faster than from TZM Mo, indicating that fast Li diffusion into the bulk graphite substrate occurred, as predicted. Li re-deposition fractions very close to unity are observed in Magnum-PSI, as predicted by modeling. Finally, predictions of Li coating lifetimes in the NSTX-U divertor are calculated. The gross erosion rate of boron coatings was also measured for the first time in a high-flux plasma device.« less

Development of impact resistant boron/aluminum composites for turbojet engine fan blades

NASA Technical Reports Server (NTRS)

Melnyk, P.; Toth, I. J.

1975-01-01

Composite fabrication was performed by vacuum press diffusion bonding by both the foil-filament array and preconsolidated monotape methods. The effect of matrix material, fiber diameter, matrix enhancement, fiber volume reinforcement, test temperature, angle-plying, notch, impact orientation, processing variables and fabrication methods on tensile strength and Charpy impact resistance are evaluated. Root attachment concepts, were evaluated by room and elevated temperature tensile testing, as well as by pendulum-Izod and ballistic impact testing. Composite resistance to foreign object damage was also evaluated by ballistic impacting of panels using projectiles of gelatin, RTV rubber and steel at various velocities, and impingement angles. A significant improvement in the pendulum impact resistance of B-Al composites was achieved.

Methods of forming boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J

A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boronmore » nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.« less

Processing and characterization of boron carbide-hafnium diboride ceramics

NASA Astrophysics Data System (ADS)

Brown-Shaklee, Harlan James

Hafnium diboride based ceramics are promising candidate materials for advanced aerospace and nuclear reactor components. The effectiveness of boron carbide and carbon as HfB2 sintering additives was systematically evaluated. In the first stage of the research, boron carbide and carbon additives were found to improve the densification behavior of milled HfB2 powder in part by removing oxides at the HfB2 surface during processing. Boron carbide additives reduced the hot pressing temperature of HfB2 by 150°C compared to carbon, which reduced the hot pressing temperature by ˜50°C. Reduction of oxide impurities alone could not explain the difference in sintering enhancement, however, and other mechanisms of enhancement were evaluated. Boron carbides throughout the homogeneity range were characterized to understand other mechanisms of sintering enhancement in HfB2. Heavily faulted carbon rich and boron rich boron carbides were synthesized for addition to HfB2. The greatest enhancement to densification was observed in samples containing boron- and carbon-rich compositions whereas B6.5 C provided the least enhancement to densification. It is proposed that carbon rich and boron rich boron carbides create boron and hafnium point defects in HfB2, respectively, which facilitate densification. Evaluation of the thermal conductivity (kth) between room temperature and 2000°C suggested that the stoichiometry of the boron carbide additives did not significantly affect kth of HfB2-BxC composites. The improved sinterability and the high kth (˜110 W/m-K at 300K and ˜90 W/m-K at 1000°C ) of HfB2-BxC ceramics make them excellent candidates for isotopically enriched reactor control materials.

METHOD OF COATING SURFACES WITH BORON

DOEpatents

Martin, G.R.

1949-10-11

A method of forming a thin coating of boron on metallic, glass, or other surfaces is described. The method comprises heating the article to be coated to a temperature of about 550 d C in an evacuated chamber and passing trimethyl boron, triethyl boron, or tripropyl boron in the vapor phase and under reduced pressure into contact with the heated surface causing boron to be deposited in a thin film.

Boron-containing organosilane polymers and ceramic materials thereof

NASA Technical Reports Server (NTRS)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1988-01-01

The present invention relates to organic silicon-boron polymers which upon pyrolysis produce high-temperature ceramic materials. More particularly, it relates to the polyorganoborosilanes containing -Si-B- bonds which generate high-temperature ceramic materials (e.g., SiC, SiB4, B4C) upon thermal degradation. The process for preparing these organic silicon-boron polymer precursors are also part of the invention.

Thermal insulation for high temperature microwave sintering operations and method thereof

DOEpatents

Holcombe, Cressie E.; Dykes, Norman L.; Morrow, Marvin S.

1995-01-01

Superior microwave transparent thermal insulations for high temperature microwave sintering operations were prepared. One embodiment of the thermal insulation comprises granules of boron nitride coated with a very thin layer of glassy carbon made by preparing a glassy carbon precursor and blending it with boron nitride powder to form a mixture. The blended mixture is granulated to form a grit which is dried and heated to form the granules of boron nitride coated with a glassy carbon. Alternatively, grains of glassy carbon are coated with boron nitride by blending a mixture of a slurry comprising boron nitride, boric acid binder, and methyl alcohol with glassy carbon grains to form a blended mixture. The blended mixture is dried to form grains of glassy carbon coated with boron nitride. In addition, a physical mixture of boron nitride powder and glassy carbon grains has also been shown to be an excellent thermal insulation material for microwave processing and sintering.

Method of preparing thermal insulation for high temperature microwave sintering operations

DOEpatents

Holcombe, Cressie E.; Dykes, Norman L.; Morrow, Marvin S.

1996-01-01

Superior microwave transparent thermal insulations for high temperature microwave sintering operations were prepared. One embodiment of the thermal insulation comprises granules of boron nitride coated with a very thin layer of glassy carbon made by preparing a glassy carbon precursor and blending it with boron nitride powder to form a mixture. The blended mixture is granulated to form a grit which is dried and heated to form the granules of boron nitride coated with a glassy carbon. Alternatively, grains of glassy carbon are coated with boron nitride by blending a mixture of a slurry comprising boron nitride, boric acid binder, and methyl alcohol with glassy carbon grains to form a blended mixture. The blended mixture is dried to form grains of glassy carbon coated with boron nitride. In addition, a physical mixture of boron nitride powder and glassy carbon grains has also been shown to be an excellent thermal insulation material for microwave processing and sintering.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aggarwal, J.K.; Palmer, M.R.

Boron isotope ratios have been determined in a variety of different geothermal waters from hydrothermal systems across Iceland. Isotope ratios from the high temperature meteoric water recharged systems reflect the isotope ratio of the host rocks without any apparent fractionation. Seawater recharged geothermal systems exhibit more positive {delta}{sup 11}B values than the meteoric water recharged geothermal systems. Water/rock ratios can be assessed from boron isotope ratios in the saline hydrothermal systems. Low temperature hydrothermal systems also exhibit more positive {delta}{sup 11}B than the high temperature systems, indicating fractionation of boron due to adsorption of the lighter isotope onto secondary minerals.more » Fractionation of boron in carbonate deposits may indicate the level of equilibrium attained within the systems.« less

Process research on non-CZ silicon material

NASA Technical Reports Server (NTRS)

1982-01-01

High risk, high payoff research areas associated with he process for producing photovoltaic modules using non-CZ sheet material are investigated. All investigations are being performed using dendritic web silicon, but all processes are directly applicable to other ribbon forms of sheet material. The technical feasibility of forming front and back junctions in non-CZ silicon using liquid dopant techniques was determined. Numerous commercially available liquid phosphorus and boron dopant solutions are investigated. Temperature-time profiles to achieve N(+) and P(+) sheet resistivities of 60 + or - 10 and 40 + or - s10 ohms per square centimeter respectively are established. A study of the optimal method of liquid dopant application is performed. The technical feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask was also determined.

Indications for a High-Rigidity Break in the Cosmic-Ray Diffusion Coefficient

NASA Astrophysics Data System (ADS)

Génolini, Yoann; Serpico, Pasquale D.; Boudaud, Mathieu; Caroff, Sami; Poulin, Vivian; Derome, Laurent; Lavalle, Julien; Maurin, David; Poireau, Vincent; Rosier, Sylvie; Salati, Pierre; Vecchi, Manuela

2017-12-01

Using cosmic-ray boron to carbon ratio (B/C) data recently released by the Ams-02 experiment, we find indications (decisive evidence, in Bayesian terms) in favor of a diffusive propagation origin for the broken power-law spectra found in protons (p ) and helium nuclei (He). The result is robust with respect to currently estimated uncertainties in the cross sections, and in the presence of a small component of primary boron, expected because of spallation at the acceleration site. Reduced errors at high energy as well as further cosmic ray nuclei data (as absolute spectra of C, N, O, Li, Be) may definitively confirm this scenario.

Preliminary dosimetric study on feasibility of multi-beam boron neutron capture therapy in patients with diffuse intrinsic pontine glioma without craniotomy.

PubMed

Lee, Jia-Cheng; Chuang, Keh-Shih; Chen, Yi-Wei; Hsu, Fang-Yuh; Chou, Fong-In; Yen, Sang-Hue; Wu, Yuan-Hung

2017-01-01

Diffuse intrinsic pontine glioma is a very frustrating disease. Since the tumor infiltrates the brain stem, surgical removal is often impossible. For conventional radiotherapy, the dose constraint of the brain stem impedes attempts at further dose escalation. Boron neutron capture therapy (BNCT), a targeted radiotherapy, carries the potential to selectively irradiate tumors with an adequate dose while sparing adjacent normal tissue. In this study, 12 consecutive patients treated with conventional radiotherapy in our institute were reviewed to evaluate the feasibility of BNCT. NCTPlan Ver. 1.1.44 was used for dose calculations. Compared with two and three fields, the average maximal dose to the normal brain may be lowered to 7.35 ± 0.72 Gy-Eq by four-field irradiation. The mean ratio of minimal dose to clinical target volume and maximal dose to normal tissue was 2.41 ± 0.26 by four-field irradiation. A therapeutic benefit may be expected with multi-field boron neutron capture therapy to treat diffuse intrinsic pontine glioma without craniotomy, while the maximal dose to the normal brain would be minimized by using the four-field setting.

Preliminary dosimetric study on feasibility of multi-beam boron neutron capture therapy in patients with diffuse intrinsic pontine glioma without craniotomy

PubMed Central

Lee, Jia-Cheng; Chuang, Keh-Shih; Chen, Yi-Wei; Hsu, Fang-Yuh; Chou, Fong-In; Yen, Sang-Hue

2017-01-01

Diffuse intrinsic pontine glioma is a very frustrating disease. Since the tumor infiltrates the brain stem, surgical removal is often impossible. For conventional radiotherapy, the dose constraint of the brain stem impedes attempts at further dose escalation. Boron neutron capture therapy (BNCT), a targeted radiotherapy, carries the potential to selectively irradiate tumors with an adequate dose while sparing adjacent normal tissue. In this study, 12 consecutive patients treated with conventional radiotherapy in our institute were reviewed to evaluate the feasibility of BNCT. NCTPlan Ver. 1.1.44 was used for dose calculations. Compared with two and three fields, the average maximal dose to the normal brain may be lowered to 7.35 ± 0.72 Gy-Eq by four-field irradiation. The mean ratio of minimal dose to clinical target volume and maximal dose to normal tissue was 2.41 ± 0.26 by four-field irradiation. A therapeutic benefit may be expected with multi-field boron neutron capture therapy to treat diffuse intrinsic pontine glioma without craniotomy, while the maximal dose to the normal brain would be minimized by using the four-field setting. PMID:28662135

Short-Term Coral Bleaching Is Not Recorded by Skeletal Boron Isotopes

PubMed Central

Schoepf, Verena; McCulloch, Malcolm T.; Warner, Mark E.; Levas, Stephen J.; Matsui, Yohei; Aschaffenburg, Matthew D.; Grottoli, Andréa G.

2014-01-01

Coral skeletal boron isotopes have been established as a proxy for seawater pH, yet it remains unclear if and how this proxy is affected by seawater temperature. Specifically, it has never been directly tested whether coral bleaching caused by high water temperatures influences coral boron isotopes. Here we report the results from a controlled bleaching experiment conducted on the Caribbean corals Porites divaricata, Porites astreoides, and Orbicella faveolata. Stable boron (δ11B), carbon (δ13C), oxygen (δ18O) isotopes, Sr/Ca, Mg/Ca, U/Ca, and Ba/Ca ratios, as well as chlorophyll a concentrations and calcification rates were measured on coral skeletal material corresponding to the period during and immediately after the elevated temperature treatment and again after 6 weeks of recovery on the reef. We show that under these conditions, coral bleaching did not affect the boron isotopic signature in any coral species tested, despite significant changes in coral physiology. This contradicts published findings from coral cores, where significant decreases in boron isotopes were interpreted as corresponding to times of known mass bleaching events. In contrast, δ13C and δ18O exhibited major enrichment corresponding to decreases in calcification rates associated with bleaching. Sr/Ca of bleached corals did not consistently record the 1.2°C difference in seawater temperature during the bleaching treatment, or alternatively show a consistent increase due to impaired photosynthesis and calcification. Mg/Ca, U/Ca, and Ba/Ca were affected by coral bleaching in some of the coral species, but the observed patterns could not be satisfactorily explained by temperature dependence or changes in coral physiology. This demonstrates that coral boron isotopes do not record short-term bleaching events, and therefore cannot be used as a proxy for past bleaching events. The robustness of coral boron isotopes to changes in coral physiology, however, suggests that reconstruction of seawater pH using boron isotopes should be uncompromised by short-term bleaching events. PMID:25396422

Short-term coral bleaching is not recorded by skeletal boron isotopes.

PubMed

Schoepf, Verena; McCulloch, Malcolm T; Warner, Mark E; Levas, Stephen J; Matsui, Yohei; Aschaffenburg, Matthew D; Grottoli, Andréa G

2014-01-01

Coral skeletal boron isotopes have been established as a proxy for seawater pH, yet it remains unclear if and how this proxy is affected by seawater temperature. Specifically, it has never been directly tested whether coral bleaching caused by high water temperatures influences coral boron isotopes. Here we report the results from a controlled bleaching experiment conducted on the Caribbean corals Porites divaricata, Porites astreoides, and Orbicella faveolata. Stable boron (δ11B), carbon (δ13C), oxygen (δ18O) isotopes, Sr/Ca, Mg/Ca, U/Ca, and Ba/Ca ratios, as well as chlorophyll a concentrations and calcification rates were measured on coral skeletal material corresponding to the period during and immediately after the elevated temperature treatment and again after 6 weeks of recovery on the reef. We show that under these conditions, coral bleaching did not affect the boron isotopic signature in any coral species tested, despite significant changes in coral physiology. This contradicts published findings from coral cores, where significant decreases in boron isotopes were interpreted as corresponding to times of known mass bleaching events. In contrast, δ13C and δ18O exhibited major enrichment corresponding to decreases in calcification rates associated with bleaching. Sr/Ca of bleached corals did not consistently record the 1.2°C difference in seawater temperature during the bleaching treatment, or alternatively show a consistent increase due to impaired photosynthesis and calcification. Mg/Ca, U/Ca, and Ba/Ca were affected by coral bleaching in some of the coral species, but the observed patterns could not be satisfactorily explained by temperature dependence or changes in coral physiology. This demonstrates that coral boron isotopes do not record short-term bleaching events, and therefore cannot be used as a proxy for past bleaching events. The robustness of coral boron isotopes to changes in coral physiology, however, suggests that reconstruction of seawater pH using boron isotopes should be uncompromised by short-term bleaching events.

Method of enhancing the wettability of boron nitride for use as an electrochemical cell separator

DOEpatents

McCoy, L.R.

1981-01-23

A felt or other fabric of boron nitride suitable for use as an interelectrode separator within an electrochemical cell is wetted with a solution containing a thermally decomposable organic salt of an alkaline earth metal. An aqueous solution of magnesium acetate is the preferred solution for this purpose. After wetting the boron nitride, the solution is dried by heating at a sufficiently low temperature to prevent rapid boiling and the creation of voids within the separator. The dried material is then calcined at an elevated temperature in excess of 400/sup 0/C to provide a coating of an oxide of magnesium on the surface of the boron nitride fibers. A fabric or felt of boron nitride treated in this manner is easily wetted by molten electrolytic salts, such as the alkali metal halides or alkaline earth metal halides, that are used in high temperature, secondary electrochemical cells.

Method of enhancing the wettability of boron nitride for use as an electrochemical cell separator

DOEpatents

McCoy, Lowell R.

1982-01-01

A felt or other fabric of boron nitride suitable for use as an interelecte separator within an electrochemical cell is wetted with a solution containing a thermally decomposable organic salt of an alkaline earth metal. An aqueous solution of magnesium acetate is the preferred solution for this purpose. After wetting the boron nitride, the solution is dried by heating at a sufficiently low temperature to prevent rapid boiling and the creation of voids within the separator. The dried material is then calcined at an elevated temperature in excess of 400.degree. C. to provide a coating of an oxide of magnesium on the surface of the boron nitride fibers. A fabric or felt of boron nitride treated in this manner is easily wetted by molten electrolytic salts, such as the alkali metal halides or alkaline earth metal halides, that are used in high temperature, secondary electrochemical cells.

Process for making boron nitride using sodium cyanide and boron

DOEpatents

Bamberger, Carlos E.

1990-02-06

This a very simple process for making boron nitride by mixing sodium cyanide and boron phosphate and heating the mixture in an inert atmosphere until a reaction takes place. The product is a white powder of boron nitride that can be used in applications that require compounds that are stable at high temperatures and that exhibit high electrical resistance.

Process for making boron nitride using sodium cyanide and boron

DOEpatents

Bamberger, Carlos E.

1990-01-01

This a very simple process for making boron nitride by mixing sodium cyanide and boron phosphate and heating the mixture in an inert atmosphere until a reaction takes place. The product is a white powder of boron nitride that can be used in applications that require compounds that are stable at high temperatures and that exhibit high electrical resistance.

Reaction paths in the system Al 2O 3-hBN-Y

NASA Astrophysics Data System (ADS)

Reichert, K.; Oreshina, O.; Cremer, R.; Neuschütz, D.

2001-07-01

As part of the investigations on the suitability of a new concept for a tailored fiber-matrix interface in sapphire fiber reinforced NiAl matrix composites for application as a high-temperature structural material, the interfacial reactions in the system alumina-hexagonal boron nitride-yttrium (Al 2O 3-hBN-Y) have been examined in the temperature range of 1100-1300°C. For this, alumina substrates were coated with hBN by means of CVD and subsequently with sputter deposited yttrium. Afterwards the samples were annealed for up to 16 h under inert atmosphere. Grazing incidence X-ray diffraction (GIXRD) served to analyze the phases formed by diffusion processes in the reaction zone. The peak intensities in these diffraction patterns were used to evaluate the sequence of phases formed due to diffusion and reaction. After the initial formation of YN and YB 2, the phases Y 2O 3, Al 2Y, and YB 4 were observed. Even longer annealing times or higher temperatures, respectively, led to the formation of the ternary oxides YAlO 3 and Y 3Al 5O 12 as well as metallic aluminum.

Single step synthesis of nanostructured boron nitride for boron neutron capture therapy

NASA Astrophysics Data System (ADS)

Singh, Bikramjeet; Singh, Paviter; Kumar, Manjeet; Thakur, Anup; Kumar, Akshay

2015-05-01

Nanostructured Boron Nitride (BN) has been successfully synthesized by carbo-thermic reduction of Boric Acid (H3BO3). This method is a relatively low temperature synthesis route and it can be used for large scale production of nanostructured BN. The synthesized nanoparticles have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and differential thermal analyzer (DTA). XRD analysis confirmed the formation of single phase nanostructured Boron Nitride. SEM analysis showed that the particles are spherical in shape. DTA analysis showed that the phase is stable upto 900 °C and the material can be used for high temperature applications as well boron neutron capture therapy (BNCT).

Preparation of Boron Nitride Nanoparticles with Oxygen Doping and a Study of Their Room-Temperature Ferromagnetism.

PubMed

Lu, Qing; Zhao, Qi; Yang, Tianye; Zhai, Chengbo; Wang, Dongxue; Zhang, Mingzhe

2018-04-18

In this work, oxygen-doped boron nitride nanoparticles with room-temperature ferromagnetism have been synthesized by a new, facile, and efficient method. There are no metal magnetic impurities in the nanoparticles analyzed by X-ray photoelectron spectroscopy. The boron nitride nanoparticles exhibit a parabolic shape with increase in the reaction time. The saturation magnetization value reaches a maximum of 0.2975 emu g -1 at 300 K when the reaction time is 12 h, indicating that the Curie temperature ( T C ) is higher than 300 K. Combined with first-principles calculation, the coupling between B 2p orbital, N 2p orbital, and O 2p orbital in the conduction bands is the main origin of room-temperature ferromagnetism and also proves that the magnetic moment changes according the oxygen-doping content change. Compared with other room temperature ferromagnetic semiconductors, boron nitride nanoparticles have widely potential applications in spintronic devices because of high temperature oxidation resistance and excellent chemical stability.

Structural and mechanical characterization of boron doped biphasic calcium phosphate produced by wet chemical method and subsequent thermal treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albayrak, Onder, E-mail: albayrakonder@mersin.edu.tr

In the current study, boron doped biphasic calcium phosphate bioceramics consisting of a mixture of boron doped hydroxyapatite (BHA) and beta tricalcium phosphate (β-TCP) of varying BHA/β-TCP ratios were obtained after sintering stage. The effects of varying boron contents and different sintering temperatures on the BHA/β-TCP ratios and on the sinterability of the final products were investigated. Particle sizes and morphologies of the obtained precipitates were determined using SEM. XRD and FTIR investigation were conducted to detect the boron formation in the structure of HA and quantitative analysis was performed to determine the BHA/β-TCP ratio before and after sintering stage.more » In order to determine the sinterability of the obtained powders, pellets were prepared and sintered; the rates of densification were calculated and obtained results were correlated by SEM images. Also Vickers microhardness values of the sintered samples were determined. The experimental results verified that boron doped hydroxyapatite powders were obtained after sintering stage and the structure consists of a mixture of BHA and β-TCP. As the boron content used in the precipitation stage increases, β-TCP content of the BHA/β-TCP ratio increases but sinterability, density and microhardness deteriorate. As the sintering temperature increases, β-TCP content, density and microhardness of the samples increase and sinterability improves. - Highlights: • This is the first paper about boron doped biphasic calcium phosphate bioceramics. • Boron doping affects the structural and mechanical properties. • BHA/β-TCP ratio can be adjustable with boron content and sintering temperature.« less

Invited Article: Indenter materials for high temperature nanoindentation

NASA Astrophysics Data System (ADS)

Wheeler, J. M.; Michler, J.

2013-10-01

As nanoindentation at high temperatures becomes increasingly popular, a review of indenter materials for usage at high temperatures is instructive for identifying appropriate indenter-sample materials combinations to prevent indenter loss or failure due to chemical reactions or wear during indentation. This is an important consideration for nanoindentation as extremely small volumes of reacted indenter material will have a significant effect on measurements. The high temperature hardness, elastic modulus, thermal properties, and chemical reactivities of diamond, boron carbide, silicon carbide, tungsten carbide, cubic boron nitride, and sapphire are discussed. Diamond and boron carbide show the best elevated temperature hardness, while tungsten carbide demonstrates the lowest chemical reactivity with the widest array of elements.

Depth resolved investigations of boron implanted silicon

NASA Astrophysics Data System (ADS)

Sztucki, M.; Metzger, T. H.; Milita, S.; Berberich, F.; Schell, N.; Rouvière, J. L.; Patel, J.

2003-01-01

We have studied the depth distribution and structure of defects in boron implanted silicon (0 0 1). Silicon wafers were implanted with a boron dose of 6×10 15 ions/cm -2 at 32 keV and went through different annealing treatments. Using diffuse X-ray scattering at grazing incidence and exit angles we are able to distinguish between different kinds of defects (point defect clusters and extrinsic stacking faults on {1 1 1} planes) and to determine their depth distribution as a function of the thermal budget. Cross-section transmission electron microscopy was used to gain complementary information. In addition we have determined the strain distribution caused by the boron implantation as a function of depth from rocking curve measurements.

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

PubMed Central

Liu, Yang; Deng, Lingxiao; Zhang, Mingliang; Zhang, Shuyuan; Ma, Jing; Song, Peishuai; Liu, Qing; Ji, An; Yang, Fuhua; Wang, Xiaodong

2018-01-01

Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity. PMID:29385759

Boron sorption from aqueous solution by hydrotalcite and its preliminary application in geothermal water deboronation.

PubMed

Guo, Qinghai; Zhang, Yin; Cao, Yaowu; Wang, Yanxin; Yan, Weide

2013-11-01

Hydrotalcite and its calcination product were used to treat pure water spiked with various concentrations of boron and geothermal water containing boron as a major undesirable element. The kinetics process of boron sorption by uncalcined hydrotalcite is controlled by the diffusion of boron from bulk solution to sorbent-solution boundary film and its exchange with interlayer chloride of hydrotalcite, whereas the removal rate of boron by calcined hydrotalcite rests with the restoration process of its layered structure. The results of isotherm sorption experiments reveal that calcined hydrotalcite generally has much stronger ability to lower solution boron concentration than uncalcined hydrotalcite. The combination of adsorption of boron on the residue of MgO-Al2O3 solid solution and intercalation of boron into the reconstructed hydrotalcite structure due to "structural memory effect" is the basic mechanism based on which the greater boron removal by calcined hydrotalcite was achieved. As 15 geothermal water samples were used to test the deboronation ability of calcined hydrotalcite at 65 °C, much lower boron removal efficiencies were observed. The competitive sorption of the other anions in geothermal water, such as HCO3-, SO4(2-), and F-, is the reason why calcined hydrotalcite could not remove boron from geothermal water as effectively as from pure boron solution. However, boron removal percents ranging from 89.3 to 99.0% could be obtained if 50 times of sorbent were added to the geothermal water samples. Calcined hydrotalcite is a good candidate for deboronation of geothermal water.

Single step synthesis of nanostructured boron nitride for boron neutron capture therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Bikramjeet; Singh, Paviter; Kumar, Akshay, E-mail: akshaykumar.tiet@gmail.com

2015-05-15

Nanostructured Boron Nitride (BN) has been successfully synthesized by carbo-thermic reduction of Boric Acid (H{sub 3}BO{sub 3}). This method is a relatively low temperature synthesis route and it can be used for large scale production of nanostructured BN. The synthesized nanoparticles have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and differential thermal analyzer (DTA). XRD analysis confirmed the formation of single phase nanostructured Boron Nitride. SEM analysis showed that the particles are spherical in shape. DTA analysis showed that the phase is stable upto 900 °C and the material can be used for high temperature applications asmore » well boron neutron capture therapy (BNCT)« less

Program for the development of high temperature electrical materials and components

NASA Technical Reports Server (NTRS)

Neff, W. S.; Lowry, L. R.

1972-01-01

Evaluation of high temperature, space-vacuum performance of selected electrical materials and components, high temperature capacitor development, and evaluation, construction, and endurance testing of compression sealed pyrolytic boron nitride slot insulation are described. The first subject above covered the aging evaluation of electrical devices constructed from selected electrical materials. Individual materials performances were also evaluated and reported. The second subject included study of methods of improving electrical performance of pyrolytic boron nitride capacitors. The third portion was conducted to evaluate the thermal and electrical performance of pyrolytic boron nitride as stator slot liner material under varied temperature and compressive loading. Conclusions and recommendations are presented.

High-Speed Imaging Optical Pyrometry for Study of Boron Nitride Nanotube Generation

NASA Technical Reports Server (NTRS)

Inman, Jennifer A.; Danehy, Paul M.; Jones, Stephen B.; Lee, Joseph W.

2014-01-01

A high-speed imaging optical pyrometry system is designed for making in-situ measurements of boron temperature during the boron nitride nanotube synthesis process. Spectrometer measurements show molten boron emission to be essentially graybody in nature, lacking spectral emission fine structure over the visible range of the electromagnetic spectrum. Camera calibration experiments are performed and compared with theoretical calculations to quantitatively establish the relationship between observed signal intensity and temperature. The one-color pyrometry technique described herein involves measuring temperature based upon the absolute signal intensity observed through a narrowband spectral filter, while the two-color technique uses the ratio of the signals through two spectrally separated filters. The present study calibrated both the one- and two-color techniques at temperatures between 1,173 K and 1,591 K using a pco.dimax HD CMOS-based camera along with three such filters having transmission peaks near 550 nm, 632.8 nm, and 800 nm.

Method of preparing thermal insulation for high temperature microwave sintering operations

DOEpatents

Holcombe, C.E.; Dykes, N.L.; Morrow, M.S.

1996-07-16

Superior microwave transparent thermal insulations for high temperature microwave sintering operations were prepared. One embodiment of the thermal insulation comprises granules of boron nitride coated with a very thin layer of glassy carbon made by preparing a glassy carbon precursor and blending it with boron nitride powder to form a mixture. The blended mixture is granulated to form a grit which is dried and heated to form the granules of boron nitride coated with a glassy carbon. Alternatively, grains of glassy carbon are coated with boron nitride by blending a mixture of a slurry comprising boron nitride, boric acid binder, and methyl alcohol with glassy carbon grains to form a blended mixture. The blended mixture is dried to form grains of glassy carbon coated with boron nitride. In addition, a physical mixture of boron nitride powder and glassy carbon grains has also been shown to be an excellent thermal insulation material for microwave processing and sintering. 1 fig.

Thermal insulation for high temperature microwave sintering operations and method thereof

DOEpatents

Holcombe, C.E.; Dykes, N.L.; Morrow, M.S.

1995-09-12

Superior microwave transparent thermal insulations for high temperature microwave sintering operations were prepared. One embodiment of the thermal insulation comprises granules of boron nitride coated with a very thin layer of glassy carbon made by preparing a glassy carbon precursor and blending it with boron nitride powder to form a mixture. The blended mixture is granulated to form a grit which is dried and heated to form the granules of boron nitride coated with a glassy carbon. Alternatively, grains of glassy carbon are coated with boron nitride by blending a mixture of a slurry comprising boron nitride, boric acid binder, and methyl alcohol with glassy carbon grains to form a blended mixture. The blended mixture is dried to form grains of glassy carbon coated with boron nitride. In addition, a physical mixture of boron nitride powder and glassy carbon grains has also been shown to be an excellent thermal insulation material for microwave processing and sintering. 1 fig.

BN Bonded BN fiber article and method of manufacture

DOEpatents

Hamilton, Robert S.

1981-08-18

A boron nitride bonded boron nitride fiber article and the method for its manufacture which comprises forming a shaped article with a composition comprising a bonding compound selected from boron oxide and boric acid and a structural fiber selected from the group consisting of boron oxide, boron nitride and partially nitrided boron oxide fibers, heating the composition in an anhydrous gas to a temperature above the melting point of the compound and nitriding the resulting article in ammonia gas.

Communication: Water on hexagonal boron nitride from diffusion Monte Carlo

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al-Hamdani, Yasmine S.; Ma, Ming; Michaelides, Angelos, E-mail: angelos.michaelides@ucl.ac.uk

2015-05-14

Despite a recent flurry of experimental and simulation studies, an accurate estimate of the interaction strength of water molecules with hexagonal boron nitride is lacking. Here, we report quantum Monte Carlo results for the adsorption of a water monomer on a periodic hexagonal boron nitride sheet, which yield a water monomer interaction energy of −84 ± 5 meV. We use the results to evaluate the performance of several widely used density functional theory (DFT) exchange correlation functionals and find that they all deviate substantially. Differences in interaction energies between different adsorption sites are however better reproduced by DFT.

Internal quantum efficiency mapping analysis for a >20%-efficiency n-type bifacial solar cell with front-side emitter formed by BBr3 thermal diffusion

NASA Astrophysics Data System (ADS)

Simayi, Shalamujiang; Mochizuki, Toshimitsu; Kida, Yasuhiro; Shirasawa, Katsuhiko; Takato, Hidetaka

2017-10-01

This paper presents a large-area (239-cm2) high-efficiency n-type bifacial solar cell that is processed using tube-furnace thermal diffusion employing liquid sources BBr3 for the front-side boron emitter and POCl3 for the rear-side phosphorus back surface field (BSF). The SiN x /Al2O3 stack was applied to the front-side boron emitter as a passivation layer. Both the front and rear-side electrodes are obtained using screen-printed contacts with H-patterns. The resulting highest-efficiency solar cell has front- and rear-side efficiencies of 20.3 and 18.7%, respectively, while the corresponding bifaciality is up to 92%. Finally, the passivation quality of the SiN x /Al2O3 stack on the front-side boron emitter and rear-side phosphorus BSF is investigated and visualized by measuring the internal quantum efficiency mapping of the bifacial solar cell.

Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalyadin, A. E.; Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru; Strel’chuk, A. M.

2016-02-15

SiGe-based n{sup +}–p–p{sup +} light-emitting diodes (LEDs) with heavily doped layers fabricated by the diffusion (of boron and phosphorus) and CVD (chemical-vapor deposition of polycrystalline silicon layers doped with boron and phosphorus) techniques are studied. The electroluminescence spectra of both kinds of LEDs are identical, but the emission intensity of CVD diodes is ∼20 times lower. The reverse and forward currents in the CVD diodes are substantially higher than those in diffusion-grown diodes. The poorer luminescence and electrical properties of the CVD diodes are due to the formation of defects at the interface between the emitter and base layers.

Mathematical modeling and experimental validation of the spatial distribution of boron in the root of Arabidopsis thaliana identify high boron accumulation in the tip and predict a distinct root tip uptake function.

PubMed

Shimotohno, Akie; Sotta, Naoyuki; Sato, Takafumi; De Ruvo, Micol; Marée, Athanasius F M; Grieneisen, Verônica A; Fujiwara, Toru

2015-04-01

Boron, an essential micronutrient, is transported in roots of Arabidopsis thaliana mainly by two different types of transporters, BORs and NIPs (nodulin26-like intrinsic proteins). Both are plasma membrane localized, but have distinct transport properties and patterns of cell type-specific accumulation with different polar localizations, which are likely to affect boron distribution. Here, we used mathematical modeling and an experimental determination to address boron distributions in the root. A computational model of the root is created at the cellular level, describing the boron transporters as observed experimentally. Boron is allowed to diffuse into roots, in cells and cell walls, and to be transported over plasma membranes, reflecting the properties of the different transporters. The model predicts that a region around the quiescent center has a higher concentration of soluble boron than other portions. To evaluate this prediction experimentally, we determined the boron distribution in roots using laser ablation-inductivity coupled plasma-mass spectrometry. The analysis indicated that the boron concentration is highest near the tip and is lower in the more proximal region of the meristem zone, similar to the pattern of soluble boron distribution predicted by the model. Our model also predicts that upward boron flux does not continuously increase from the root tip toward the mature region, indicating that boron taken up in the root tip is not efficiently transported to shoots. This suggests that root tip-absorbed boron is probably used for local root growth, and that instead it is the more mature root regions which have a greater role in transporting boron toward the shoots. © The Author 2015. Published by Oxford University Press on behalf of Japanese Society of Plant Physiologists.

Mathematical Modeling and Experimental Validation of the Spatial Distribution of Boron in the Root of Arabidopsis thaliana Identify High Boron Accumulation in the Tip and Predict a Distinct Root Tip Uptake Function

PubMed Central

Shimotohno, Akie; Sotta, Naoyuki; Sato, Takafumi; De Ruvo, Micol; Marée, Athanasius F.M.; Grieneisen, Verônica A.; Fujiwara, Toru

2015-01-01

Boron, an essential micronutrient, is transported in roots of Arabidopsis thaliana mainly by two different types of transporters, BORs and NIPs (nodulin26-like intrinsic proteins). Both are plasma membrane localized, but have distinct transport properties and patterns of cell type-specific accumulation with different polar localizations, which are likely to affect boron distribution. Here, we used mathematical modeling and an experimental determination to address boron distributions in the root. A computational model of the root is created at the cellular level, describing the boron transporters as observed experimentally. Boron is allowed to diffuse into roots, in cells and cell walls, and to be transported over plasma membranes, reflecting the properties of the different transporters. The model predicts that a region around the quiescent center has a higher concentration of soluble boron than other portions. To evaluate this prediction experimentally, we determined the boron distribution in roots using laser ablation-inductivity coupled plasma-mass spectrometry. The analysis indicated that the boron concentration is highest near the tip and is lower in the more proximal region of the meristem zone, similar to the pattern of soluble boron distribution predicted by the model. Our model also predicts that upward boron flux does not continuously increase from the root tip toward the mature region, indicating that boron taken up in the root tip is not efficiently transported to shoots. This suggests that root tip-absorbed boron is probably used for local root growth, and that instead it is the more mature root regions which have a greater role in transporting boron toward the shoots. PMID:25670713

Boron-doped diamond synthesized at high-pressure and high-temperature with metal catalyst

NASA Astrophysics Data System (ADS)

Shakhov, Fedor M.; Abyzov, Andrey M.; Kidalov, Sergey V.; Krasilin, Andrei A.; Lähderanta, Erkki; Lebedev, Vasiliy T.; Shamshur, Dmitriy V.; Takai, Kazuyuki

2017-04-01

The boron-doped diamond (BDD) powder consisting of 40-100 μm particles was synthesized at 5 GPa and 1500-1600 °C from a mixture of 50 wt% graphite and 50 wt% Ni-Mn catalyst with an addition of 1 wt% or 5 wt% boron powder. The size of crystal domains of doped and non-doped diamond was evaluated as a coherent scattering region by X-ray diffraction (XRD) and using small-angle neutron scattering (SANS), being ≥180 nm (XRD) and 100 nm (SANS). Magnetic impurities of NiMnx originating from the catalyst in the synthesis, which prevent superconductivity, were detected by magnetization measurements at 2-300 K. X-ray photoelectron spectroscopy, the temperature dependence of the resistivity, XRD, and Raman spectroscopy reveal that the concentration of electrically active boron is as high as (2±1)×1020 cm-3 (0.1 at%). To the best of our knowledge, this is the highest boron content for BDD synthesized in high-pressure high-temperature process with metal catalysts.

Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng

2014-05-28

Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstratemore » such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.« less

Upgraded metallurgical-grade silicon solar cells with efficiency above 20%

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, P.; Rougieux, F. E.; Samundsett, C.

We present solar cells fabricated with n-type Czochralski–silicon wafers grown with strongly compensated 100% upgraded metallurgical-grade feedstock, with efficiencies above 20%. The cells have a passivated boron-diffused front surface, and a rear locally phosphorus-diffused structure fabricated using an etch-back process. The local heavy phosphorus diffusion on the rear helps to maintain a high bulk lifetime in the substrates via phosphorus gettering, whilst also reducing recombination under the rear-side metal contacts. The independently measured results yield a peak efficiency of 20.9% for the best upgraded metallurgical-grade silicon cell and 21.9% for a control device made with electronic-grade float-zone silicon. The presencemore » of boron-oxygen related defects in the cells is also investigated, and we confirm that these defects can be partially deactivated permanently by annealing under illumination.« less

Modeling Deuterium Release from Plasma Implanted Surfaces

NASA Astrophysics Data System (ADS)

Grossman, A. A.; Doerner, R.; Hirooka, Y.; Luckhardt, S. C.; Sze, F. C.

1997-11-01

When energetic ions or atoms of hydrogen isotopes interact with a solid surface, they may either be reflected or they may be implanted, a slowing down process within the subsurface layer of the energetic particles to thermal velocities. Subsequent interactions of the thermalized particles are those of diffusion and trapping within the material and the possibility of re-emission from the solid via desorption. The diffusion equation and its boundary conditions govern the transport of this thermalized hydrogen within the material. Diffusivities obey an Arrhenius law over as much as fourteen orders of magnitude for the temperature range of interest for a fusion reactor first wall and divertor plate. Using TMAP4, a variety of diffusion models are set up for comparison with experiments on PISCES which involve implantation and desorption of deuterium from beryllium, tungsten, carbon and boron carbide. The parameters and characteristics of the models which give the closest fit to the experimental data are reported. At the high fluences of these experiments, it is necessary to take into account saturation effects during implantation using a separate implantation layer with thickness given by TRIM and a higher trapping to lattice ratio than in the bulk in order to model the experimental data.

Microstructure and fracture toughness of Mn-stabilized cubic titanium trialuminide

NASA Astrophysics Data System (ADS)

Zbroniec, Leszek Ireneusz

This thesis project is related to the fracture toughness aspects of the mechanical behavior of the selected Mn-modified cubic Ll2 titanium trialuminicles. Fracture toughness was evaluated using two specimen types: Single-Edge-Precracked-Beam (SEPB) and Chevron-Notched-Beam (CNB). The material tested was in cast, homogenized and HIP-ed condition. In the preliminary stage of the project due to lack of the ASTM Standard for fracture toughness testing of the chevron-notched specimens in bending the analyses of the CNB configuration were done to establish the optimal chevron notch dimensions. Two types of alloys were investigated: (a) boron-free and boron doped low-Mn (9at.% Mn), as well as (b) boron-free and boron-doped high-Mn (14at.% Mn). Toughness was investigated in the temperature range from room temperature to 1000°C and was calculated from the maximum load. It has been found that toughness of coarse-grained "base" 9Mn-25Ti alloy exhibits a broad peak at the 200--500°C temperature range and then decreases with increasing temperature, reaching its room temperature value at 10000°C. However, the work of fracture (gammaWOF) and the stress intensity factor calculated from it (KIWOF) increases continuously with increasing temperature. Also the fracture mode dependence on temperature has been established. To understand the effect of environment on the fracture toughness of coarse-grained "base", boron-free 9Mn-25Ti alloy, the tests were carried out in vacuum (˜1.3 x 10-5 Pa), argon, oxygen, water and liquid nitrogen. It has been shown that fracture toughness at ambient temperature is not affected by the environments containing moisture (water vapor). It seems that at ambient temperatures these materials are completely immune to the water-vapor hydrogen embrittlement and their cause of brittleness is other than environment. To explore the influence of the grain size on fracture toughness the fracture toughness tests were also performed on the dynamically recrystallized "base", boron-free 9Mn-25Ti material with the average grain size of 45 mum. Further refinement of the grain size was obtained by ball-milling of powders in order to obtain a nanostructure material. These were subsequently consolidated by hot pressing with the objective of retaining the nanostructure to the largest extent possible. The estimated grain size of the powder compact was ˜50--200 mum. The indentation microcracking fracture toughness measurements were performed on the powder compacts. It has been found that fracture toughness is independent of the grain size in the range ˜1300--45 mum and that for the finest grains (˜50--200 mum) it drops substantially and is equal to half of that for coarse-grained material. A beneficial effect of boron doping, high-(Mn+Ti) concentration and combination of both, on the fracture toughness was observed at room and elevated temperatures. The addition of boron to a "base" 9at.% Mn-25at.% Ti trialuminicle improves the room temperature fracture toughness by 25--50%. Addition of boron to a high (Mn+Ti) trialuminide improves the room temperature fracture toughness by 100% with respect to a "base" 9Mn-25Ti alloy. Depending on the Mn+Ti concentrations and the level of boron doping, improvements of fracture toughness at 200--600°C and 800--1000°C ranges are also observed.

Demonstration of optimum fuel-to-moderator ratio in a PWR unit fuel cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feltus, M.A.; Pozsgai, C.

1992-01-01

Nuclear engineering students at The Pennsylvania State University develop scaled-down [[approx]350 MW(thermal)] pressurized water reactors (PWRs) using actual plants as references. The design criteria include maintaining the clad temperature below 2200[degree]F, fuel temperature below melting point, sufficient departure from nucleate boiling ratio (DNBR) margin, a beginning-of-life boron concentration that yields a negative moderator temperature coefficient, an adequate cycle power production (330 effective full-power days), and a batch loading scheme that is economical. The design project allows for many degrees of freedom (e.g., assembly number, pitch and height and batch enrichments) so that each student's result is unique. The iterative naturemore » of the design process is stressed in the course. The LEOPARD code is used for the unit cell depletion, critical boron, and equilibrium xenon calculations. Radial two-group diffusion equations are solved with the TWIDDLE-DEE code. The steady-state ZEBRA thermal-hydraulics program is used for calculating DNBR. The unit fuel cell pin radius and pitch (fuel-to-moerator ratio) for the scaled-down design, however, was set equal to the already optimized ratio for the reference PWR. This paper describes an honors project that shows how the optimum fuel-to-moderator ratio is found for a unit fuel cell shown in terms of neutron economics. This exercise illustrates the impact of fuel-to-moderator variations on fuel utilization factor and the effect of assuming space and energy separability.« less

Geant4 beam model for boron neutron capture therapy: investigation of neutron dose components.

PubMed

Moghaddasi, Leyla; Bezak, Eva

2018-03-01

Boron neutron capture therapy (BNCT) is a biochemically-targeted type of radiotherapy, selectively delivering localized dose to tumour cells diffused in normal tissue, while minimizing normal tissue toxicity. BNCT is based on thermal neutron capture by stable [Formula: see text]B nuclei resulting in emission of short-ranged alpha particles and recoil [Formula: see text]Li nuclei. The purpose of the current work was to develop and validate a Monte Carlo BNCT beam model and to investigate contribution of individual dose components resulting of neutron interactions. A neutron beam model was developed in Geant4 and validated against published data. The neutron beam spectrum, obtained from literature for a cyclotron-produced beam, was irradiated to a water phantom with boron concentrations of 100 μg/g. The calculated percentage depth dose curves (PDDs) in the phantom were compared with published data to validate the beam model in terms of total and boron depth dose deposition. Subsequently, two sensitivity studies were conducted to quantify the impact of: (1) neutron beam spectrum, and (2) various boron concentrations on the boron dose component. Good agreement was achieved between the calculated and measured neutron beam PDDs (within 1%). The resulting boron depth dose deposition was also in agreement with measured data. The sensitivity study of several boron concentrations showed that the calculated boron dose gradually converged beyond 100 μg/g boron concentration. This results suggest that 100μg/g tumour boron concentration may be optimal and above this value limited increase in boron dose is expected for a given neutron flux.

Feasibility studies of the growth of 3-5 compounds of boron by MOCVD

NASA Technical Reports Server (NTRS)

Manasevit, H. M.

1988-01-01

Boron-arsenic and boron-phosphorus films have been grown on Si sapphire and silicon-on-sapphire (SOS) by pyrolyzing Group 3 alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB), in the presence of AsH3 and PH3, respectively, in an H2 atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. However, the films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH3 were pyrolyzed over the temperature range 550 C to 900 C. The films were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 micron) B-P and thick (5 micron) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH3 and TMB showed a higher carbon content than those grown from AsH3 and TMB. Based on their B/As and B/P ratios, films with nominal compositions B sub12-16 As2 and B sub1.1-1.3 P were grown using TMB as the boron source.

Synthesis of superconducting magnesium diboride objects

DOEpatents

Finnemore, Douglas K.; Canfield, Paul C.; Bud'ko, Sergey L.; Ostenson, Jerome E.; Petrovic, Cedomir; Cunningham, Charles E.; Lapertot, Gerard

2003-08-15

A process to produce magnesium diboride objects from boron objects with a similar form is presented. Boron objects are reacted with magnesium vapor at a predetermined time and temperature to form magnesium diboride objects having a morphology similar to the boron object's original morphology.

Synthesis Of Superconducting Magnesium Diboride Objects.

DOEpatents

Finnemore, Douglas K.; Canfield, Paul C.; Bud'ko, Sergey L.; Ostenson, Jerome E.; Petrovic, Cedomir; Cunningham, Charles E.; Lapertot, Gerard

2003-07-08

A process to produce magnesium diboride objects from boron objects with a similar form is presented. Boron objects are reacted with magnesium vapor at a predetermined time and temperature to form magnesium diboride objects having a morphology similar to the boron object's original morphology.

Template growth of Au, Ni and Ni–Au nanoclusters on hexagonal boron nitride/Rh(111): a combined STM, TPD and AES study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Fanglue; Huang, Dali; Yue, Yuan

In this study, the template growth of Au, Ni, and Ni–Au bimetallic nanoclusters on hexagonal boron nitride/Rh(111), i.e. h-BN/Rh(111), was investigated via scanning tunneling microscopy (STM), temperature programmed-desorption (TPD), and Auger electron spectroscopy (AES). STM study shows that template growth of Au clusters on h-BN/Rh(111) forms mainly well-dispersed monolayer clusters. In contrast, Ni forms large multilayer clusters showing a relatively high diffusivity on h-BN/Rh(111) substrate. Ni–Au bimetallic clusters are effectively formed first by Au deposition followed by Ni deposition, with the Au clusters functioning as nucleation sites for the subsequently deposited Ni. Further structural analysis was carried out via TPDmore » and AES. The resulting TPD and AES data show the surface composition and charge transfer between Au and Ni of the bimetallic clusters. These results suggest that the h-BN/Rh(111) substrate represents a unique candidate for supporting Ni–Au bimetallic clusters in further catalytic reactions.« less

Template growth of Au, Ni and Ni–Au nanoclusters on hexagonal boron nitride/Rh(111): a combined STM, TPD and AES study

DOE PAGES

Wu, Fanglue; Huang, Dali; Yue, Yuan; ...

2017-09-12

In this study, the template growth of Au, Ni, and Ni–Au bimetallic nanoclusters on hexagonal boron nitride/Rh(111), i.e. h-BN/Rh(111), was investigated via scanning tunneling microscopy (STM), temperature programmed-desorption (TPD), and Auger electron spectroscopy (AES). STM study shows that template growth of Au clusters on h-BN/Rh(111) forms mainly well-dispersed monolayer clusters. In contrast, Ni forms large multilayer clusters showing a relatively high diffusivity on h-BN/Rh(111) substrate. Ni–Au bimetallic clusters are effectively formed first by Au deposition followed by Ni deposition, with the Au clusters functioning as nucleation sites for the subsequently deposited Ni. Further structural analysis was carried out via TPDmore » and AES. The resulting TPD and AES data show the surface composition and charge transfer between Au and Ni of the bimetallic clusters. These results suggest that the h-BN/Rh(111) substrate represents a unique candidate for supporting Ni–Au bimetallic clusters in further catalytic reactions.« less

Effect of Boron Microalloying Element on Susceptibility to Hydrogen Embrittlement in High Strength Mooring Chain Steel

NASA Astrophysics Data System (ADS)

Li, H.; Cheng, X. Y.; Shen, H. P.; Su, L. C.; Zhang, S. Y.

The susceptibility to hydrogen embrittlement in high strength mooring chain steel with different boron content (0, 0.003 %, 0.008 %) were investigated by electrochemical hydrogen charging technique and tensile test. The results revealed that appropriate boron content can effectively depress hydrogen induced embrittlement. Precharged with a low current density, this effect seemed to be unobvious. It gradually became clearly with the increasing current density. The increase of resistance to the hydrogen embrittlement for 3B and 8B after adding appropriate boron was attributed to three facts. The first was that the segregation of boron atoms along grain boundaries reduced the grain boundary segregation of phosphorus, which prohibited hydrogen concentration at the grain boundaries, depressing the possibility of the intergranular fracture due to H. The second was that the segregation of boron increased intergranular cohesion, enhanced grain boundary strength, and refined the final microstructure. The third was that the addition of boron changed the state of hydrogen traps, leading to the small amount of diffusible hydrogen. That is to say, hydrogen transferred to these defects by dislocations was accordingly decreased, which led to the low sensitive of hydrogen induced cracking.

Formation of polycrystalline MgB2 synthesized by powder in sealed tube method with different initial boron phase

NASA Astrophysics Data System (ADS)

Yudanto, Sigit Dwi; Imaduddin, Agung; Kurniawan, Budhy; Manaf, Azwar

2018-04-01

Magnesium diboride, MgB2 is a new high critical temperature superconductor that discovered in the beginning of the 21st century. The MgB2 has a simple crystal structure and a high critical temperature, which can be manufactured in several forms like thin films, tapes, wires including bulk in the large scale. For that reason, the MgB2 has good prospects for various applications in the field of electronic devices. In the current work, we have explored the synthesis of MgB2 polycrystalline using powder in a sealed tube method. Different initial boron phase for the synthesized of MgB2 polycrystalline were used. These were, in addition to magnesium powders, crystalline boron, amorphous boron and combination both of them were respectively fitted in the synthesis. The raw materials were mixed in a stoichiometric ratio of Mg: B=1:2, ground using agate mortar, packed into stainless steel SS304. The pack was then sintered at temperature of 800°C for 2 hours in air atmosphere. Phase formation of MgB2 polycrystalline in difference of initial boron phase was characterized using XRD and SEM. Referring to the diffraction pattern and microstructure observation, MgB2 polycrystalline was formed, and the formation was effective when using the crystalline Mg and fully amorphous B as the raw materials. The critical temperature of the specimen was evaluated by the cryogenic magnet. The transition temperature of the MgB2 specimen synthesized using crystalline magnesium and full amorphous boron is 42.678 K (ΔTc = 0.877 K).

Effects of oxygen-inserted layers on diffusion of boron, phosphorus, and arsenic in silicon for ultra-shallow junction formation

NASA Astrophysics Data System (ADS)

Zhang, X.; Connelly, D.; Takeuchi, H.; Hytha, M.; Mears, R. J.; Rubin, L. M.; Liu, T.-J. K.

2018-03-01

The effects of oxygen-inserted (OI) layers on the diffusion of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) are investigated, for ultra-shallow junction formation by high-dose ion implantation followed by rapid thermal annealing. The projected range (Rp) of the implanted dopants is shallower than the depth of the OI layers. Secondary ion mass spectrometry is used to compare the dopant profiles in silicon samples that have OI layers against the dopant profiles in control samples that do not have OI layers. Diffusion is found to be substantially retarded by the OI layers for B and P, and less for As, providing shallower junction depth. The experimental results suggest that the OI layers serve to block the diffusion of Si self-interstitials and thereby effectively reduce interstitial-aided diffusion beyond the depth of the OI layers. The OI layers also help to retain more dopants within the Si, which technology computer-aided design simulations indicate to be beneficial for achieving shallower junctions with lower sheet resistance to enable further miniaturization of planar metal-oxide-semiconductor field-effect transistors for improved integrated-circuit performance and cost per function.

High Temperature Oxidation of Boron Nitride. Part 1; Monolithic Boron Nitride

NASA Technical Reports Server (NTRS)

Jacobson, Nathan; Farmer, Serene; Moore, Arthur; Sayir, Haluk

1997-01-01

High temperature oxidation of monolithic boron nitride (BN) is examined. Hot pressed BN and both low and high density CVD BN were studied. It is shown that oxidation rates are quite sensitive to microstructural factors such as orientation, porosity, and degree of crystallinity. In addition small amounts of water vapor lead to volatilization of the B2O3 oxide as H(x)B(y)O(z). For these reasons, very different oxidation kinetics were observed for each type of BN.

Numerical simulation of temperature field, microstructure evolution and mechanical properties of HSS during hot stamping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Dongyong; Liu, Wenquan; Ying, Liang, E-mail: pinghu@dlut.edu.cn

The hot stamping of boron steels is widely used to produce ultra high strength automobile components without any spring back. The ultra high strength of final products is attributed to the fully martensitic microstructure that is obtained through the simultaneous forming and quenching of the hot blanks after austenization. In the present study, a mathematical model incorporating both heat transfer and the transformation of austenite is presented. A FORTRAN program based on finite element technique has been developed which permits the temperature distribution and microstructure evolution of high strength steel during hot stamping process. Two empirical diffusion-dependent transformation models undermore » isothermal conditions were employed respectively, and the prediction capability on mechanical properties of the models were compared with the hot stamping experiment of an automobile B-pillar part.« less

TED of boron in the presence of EOR defects: the use of the theory of Ostwald ripening to calculate Si-interstitial supersaturation in the vicinity of extrinsic defects

NASA Astrophysics Data System (ADS)

Bonafos, C.; Alquier, D.; Martinez, A.; Mathiot, D.; Claverie, A.

1996-05-01

When end-of-range defects are located close to or within doping profiles they render diffusion "anomalous" by both enhancing the dopant diffusivity and trapping it, both phenomena decreasing with time. Upon annealing, these defects grow in size and their density is reduced through the emission and capture of Si-interstitial atoms by a coarsening process called Ostwald ripening. In this paper, we report on how, by coupling the Ostwald ripening theory with TEM observations of the time evolution of the dislocation loops upon annealing, quantitative information allowing the enhanced diffusivity to be understood can be extracted. Indeed, during the coarsening process, a supersaturation, {C}/{C e}, of Si self-interstitial atoms is maintained between the loops and decreases with time. The enhanced diffusivity is assumed to be linked to the evolution of this interstitial supersaturation during annealing through the interstitial component of boron diffusion. We show that C drastically decreases during the first second of the anneal to asymptotically reach a value just above the equilibrium concentration Ce. This rapid decay is precisely at the origin of the transient enhanced diffusivity of dopants in the vicinity of the loops.

Synthesis, Properties, and Applications Of Boron Nitride

NASA Technical Reports Server (NTRS)

Pouch, John J.; Alterovitz, Samuel A.

1993-01-01

Report describes synthesis, properties, and applications of boron nitride. Especially in thin-film form. Boron nitride films useful as masks in x-ray lithography; as layers for passivation of high-speed microelectronic circuits; insulating films; hard, wear-resistant, protective films for optical components; lubricants; and radiation detectors. Present status of single-crystal growth of boron nitride indicates promising candidate for use in high-temperature semiconductor electronics.

Reaction cured glass and glass coatings

NASA Technical Reports Server (NTRS)

Goldstein, H. E.; Leiser, D. B.; Katvala, V. W. (Inventor)

1978-01-01

The invention relates to reaction cured glass and glass coatings prepared by reacting a compound selected from the group consisting of silicon tetraboride, silicon hexaboride, other boron silicides, boron and mixtures with a reactive glass frit composed of a porous high silica borosilicate glass and boron oxide. The glassy composites of the present invention are useful as coatings on low density fibrous porous silica insulations used as heat shields and for articles such as reaction vessels that are subjected to high temperatures with rapid heating and cooling and that require resistance to temperature and repeated thermal shock at temperatures up to about 1482C (2700PF).

Boron application improves yield of rice cultivars under high temperature stress during vegetative and reproductive stages.

PubMed

Shahid, Mohammad; Nayak, Amaresh Kumar; Tripathi, Rahul; Katara, Jawahar Lal; Bihari, Priyanka; Lal, Banwari; Gautam, Priyanka

2018-04-12

It is reported that high temperatures (HT) would cause a marked decrease in world rice production. In tropical regions, high temperatures are a constraint to rice production and the most damaging effect is on spikelet sterility. Boron (B) plays a very important role in the cell wall formation, sugar translocation, and reproduction of the rice crop and could play an important role in alleviating high temperature stress. A pot culture experiment was conducted to study the effect of B application on high temperature tolerance of rice cultivars in B-deficient soil. The treatments comprised of four boron application treatments viz. control (B0), soil application of 1 kg B ha -1 (B1), soil application of 2 kg B ha -1 (B2), and foliar spray of 0.2% B (Bfs); three rice cultivars viz. Annapurna (HT stress tolerant), Naveen, and Shatabdi (both HT stress susceptible); and three temperature regimes viz. ambient (AT), HT at vegetative stage (HTV), and HT at reproductive stage (HTR). The results revealed that high temperature stress during vegetative or flowering stage reduced grain yield of rice cultivars mainly because of low pollen viability and spikelet fertility. The effects of high temperature on the spikelet fertility and grain filling varied among cultivars and the growth stages of plant when exposed to the high temperature stress. Under high temperature stress, the tolerant cultivar displays higher cell membrane stability, less accumulation of osmolytes, more antioxidant enzyme activities, and higher pollen viability and spikelet fertility than the susceptible cultivars. In the present work, soil application of boron was effective in reducing the negative effects of high temperature both at vegetative and reproductive stages. Application of B results into higher grain yield under both ambient and high temperature condition over control for all the three cultivars; however, more increase was observed for the susceptible cultivar over the tolerant one. The results suggest that the exogenous application of boron had a substantial effect on cell membrane stability, sugar mobilization, pollen viability, and spikelet fertility, hence the yield. The cultivars due to their variation in the tolerance level for high temperature stress behaved differently, and at high temperature stress, more response of the application of boron was seen in susceptible cultivars.

Boron application improves yield of rice cultivars under high temperature stress during vegetative and reproductive stages

NASA Astrophysics Data System (ADS)

Shahid, Mohammad; Nayak, Amaresh Kumar; Tripathi, Rahul; Katara, Jawahar Lal; Bihari, Priyanka; Lal, Banwari; Gautam, Priyanka

2018-04-01

It is reported that high temperatures (HT) would cause a marked decrease in world rice production. In tropical regions, high temperatures are a constraint to rice production and the most damaging effect is on spikelet sterility. Boron (B) plays a very important role in the cell wall formation, sugar translocation, and reproduction of the rice crop and could play an important role in alleviating high temperature stress. A pot culture experiment was conducted to study the effect of B application on high temperature tolerance of rice cultivars in B-deficient soil. The treatments comprised of four boron application treatments viz. control (B0), soil application of 1 kg B ha-1 (B1), soil application of 2 kg B ha-1 (B2), and foliar spray of 0.2% B (Bfs); three rice cultivars viz. Annapurna (HT stress tolerant), Naveen, and Shatabdi (both HT stress susceptible); and three temperature regimes viz. ambient (AT), HT at vegetative stage (HTV), and HT at reproductive stage (HTR). The results revealed that high temperature stress during vegetative or flowering stage reduced grain yield of rice cultivars mainly because of low pollen viability and spikelet fertility. The effects of high temperature on the spikelet fertility and grain filling varied among cultivars and the growth stages of plant when exposed to the high temperature stress. Under high temperature stress, the tolerant cultivar displays higher cell membrane stability, less accumulation of osmolytes, more antioxidant enzyme activities, and higher pollen viability and spikelet fertility than the susceptible cultivars. In the present work, soil application of boron was effective in reducing the negative effects of high temperature both at vegetative and reproductive stages. Application of B results into higher grain yield under both ambient and high temperature condition over control for all the three cultivars; however, more increase was observed for the susceptible cultivar over the tolerant one. The results suggest that the exogenous application of boron had a substantial effect on cell membrane stability, sugar mobilization, pollen viability, and spikelet fertility, hence the yield. The cultivars due to their variation in the tolerance level for high temperature stress behaved differently, and at high temperature stress, more response of the application of boron was seen in susceptible cultivars.

Peculiar features of boron distribution in high temperature fracture area of rapidly quenched heat-resistant nickel alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shulga, A. V., E-mail: avshulga@mephi.ru

This article comprises the results of comprehensive study of the structure and distribution in the high temperature fracture area of rapidly quenched heat-resistant superalloy of grade EP741NP after tensile tests. The structure and boron distribution in the fracture area are studied in detail by means of direct track autoradiography in combination with metallography of macro- and microstructure. A rather extensive region of microcracks generation and intensive boron redistribution is detected in the high temperature fracture area of rapidly quenched nickel superalloy of grade EP741NP. A significant decrease in boron content in the fracture area and formation of elliptically arranged boridemore » precipitates are revealed. The mechanism of intense boron migration and stability violation of the structural and phase state in the fracture area of rapidly quenched heat-resistant nickel superalloy of grade EP741NP is proposed on the basis of accounting for deformation occurring in the fracture area and analysis of the stressed state near a crack.« less

On the Mechanism of Boron Ignition

NASA Technical Reports Server (NTRS)

Keil, D. G.; Dreizin, E. L.; Felder, W.; Vicenzi, E. P.

1997-01-01

Boron filaments were electrically heated in air and argon/oxygen mixtures while their resistance, temperature, and radiation at the wavelengths of BO and BO2 bands were monitored. The filaments 'burned' in two distinct stages. Samples of the filaments were quenched at different times before and during the burning and analyzed using electron microscopy. The beginning of the first stage combustion characterized by a local resistance minimum, a sharp spike in boron oxide radiation emission, and a rapid rise in temperature, occurred at 1500 +/- 70 deg. C, independent of pre-heating history and oxygen content (540%) in the gas environment. The data suggest that a phase transition occurs in the filaments at this temperature that triggers stage one combustion. Significant amounts of oxygen were found inside quenched filaments. Large spherical voids formed in the boron filaments during their second stage combustion which is interpreted to indicate a crucial role for the gas dissolution processes in the combustion scenario.

Ordering of lipid membranes altered by boron nitride nanosheets.

PubMed

Zhang, Yonghui; Li, Zhen; Chan, Chun; Ma, Jiale; Zhi, Chunyi; Cheng, Xiaolin; Fan, Jun

2018-02-07

Boron nitride nanosheets are novel promising nanomaterials with a lower cytotoxicity than graphene making them a better candidate for biomedical applications. However, there is no systematic study on how they interact with cell membranes. Here we employed large scale all-atom molecular dynamics simulations to provide molecular details of the structure and properties of membranes after the insertion of boron nitride nanosheets. Our results reveal that the boron nitride nanosheet can extract phospholipids from the lipid bilayers and is enveloped by the membrane. Afterwards, the acyl chains of lipid molecules re-orient and become more ordered. As a result, a fluid to gel phase transition occurs in the 1,2-dimyristoyl-sn-glycero-3-phosphocholine bilayer. Consequently, the bending moduli of the bilayers increase, and the diffusivity of the individual lipid molecule decreases. These changes will affect relevant cellular activities, such as endocytosis and signal transduction. Our study provides novel insights into the biocompatibility and cytotoxicity of boron nitride nanosheets, which may facilitate the design of safer nanocarriers, antibiotics and other bio-nanotechnology applications.

Boron-tuning transition temperature of vanadium dioxide from rutile to monoclinic phase

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, J. J.; He, H. Y.; Xie, Y.

2014-11-21

The effect of the doped boron on the phase transition temperature between the monoclinic phase and the rutile phase of VO{sub 2} has been studied by performing first-principles calculations. It is found that the phase transition temperature decreases linearly with increasing the doping level of B in each system, no matter where the B atom is in the crystal. More importantly, the descent of the transition temperature is predicted to be as large as 83 K/at. % B, indicating that the boron concentration of only 0.5% can cause the phase transition at room temperature. These findings provide a new routinemore » of modulating the phase transition of VO{sub 2} and pave a way for the practicality of VO{sub 2} as an energy-efficient green material.« less

Review: Microstructure Engineering of Titanium Alloys via Small Boron Additions (Preprint)

DTIC Science & Technology

2011-07-01

small amount of boron to γ titanium aluminides (TiAl) has been found to improve room temperature ductility [12]. The principal effect of boron...AFRL-RX-WP-TP-2011-4298 REVIEW: MICROSTRUCTURE ENGINEERING OF TITANIUM ALLOYS VIA SMALL BORON ADDITIONS (Preprint) D.B. Miracle...2011 Journal Article Preprint 01 July 2011 – 01 July 2011 4. TITLE AND SUBTITLE REVIEW: MICROSTRUCTURE ENGINEERING OF TITANIUM ALLOYS VIA SMALL

Amorphous boron gasket in diamond anvil cell research

NASA Astrophysics Data System (ADS)

Lin, Jung-Fu; Shu, Jinfu; Mao, Ho-kwang; Hemley, Russell J.; Shen, Guoyin

2003-11-01

Recent advances in high-pressure diamond anvil cell experiments include high-energy synchrotron x-ray techniques as well as new cell designs and gasketing procedures. The success of high-pressure experiments usually depends on a well-prepared sample, in which the gasket plays an important role. Various gasket materials such as diamond, beryllium, rhenium, and stainless steel have been used. Here we introduce amorphous boron as another gasket material in high-pressure diamond anvil cell experiments. We have applied the boron gasket for laser-heating x-ray diffraction, radial x-ray diffraction, nuclear resonant inelastic x-ray scattering, and inelastic x-ray scattering. The high shear strength of the amorphous boron maximizes the thickness of the sample chamber and increases the pressure homogeneity, improving the quality of high-pressure data. Use of amorphous boron avoids unwanted x-ray diffraction peaks and reduces the absorption of incident and x rays exiting the gasket material. The high quality of the diffraction patterns makes it possible to refine the cell parameters with powder x-ray diffraction data under high pressure and high temperature. The reactivity of boron prevents its use at high temperatures, however. When heated, boron may also react with the specimen to produce unwanted phases. The relatively porous boron starting material at ambient conditions also poses some challenges for sample preparation.

Corrosion and wear behaviors of boronized AISI 316L stainless steel

NASA Astrophysics Data System (ADS)

Kayali, Yusuf; Büyüksaǧiş, Aysel; Yalçin, Yılmaz

2013-09-01

In this study, the effects of a boronizing treatment on the corrosion and wear behaviors of AISI 316L austenitic stainless steel (AISI 316L) were examined. The corrosion behavior of the boronized samples was studied via electrochemical methods in a simulation body fluid (SBF) and the wear behavior was examined using the ball-on-disk wear method. It was observed that the boride layer that formed on the AISI 316L surface had a flat and smooth morphology. Furthermore, X-ray diffraction analyses show that the boride layer contained FeB, Fe2B, CrB, Cr2B, NiB, and Ni2B phases. Boride layer thickness increased with an increasing boronizing temperature and time. The boronizing treatment also increased the surface hardness of the AISI 316L. Although there was no positive effect of the coating on the corrosion resistance in the SBF medium. Furthermore, a decrease in the friction coefficient was recorded for the boronized AISI 316L. As the boronizing temperature increased, the wear rate decreased in both dry and wet mediums. As a result, the boronizing treatment contributed positively to the wear resistance by increasing the surface hardness and by decreasing the friction coefficient of the AISI 316L.

Method of chemical vapor deposition of boron nitride using polymeric cyanoborane

DOEpatents

Maya, Leon

1994-01-01

Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film.

Microstructural stability and thermomechanical processing of boron modified beta titanium alloys

NASA Astrophysics Data System (ADS)

Cherukuri, Balakrishna

One of the main objectives during primary processing of titanium alloys is to reduce the prior beta grain size. Producing an ingot with smaller prior beta grain size could potentially eliminate some primary processing steps and thus reduce processing cost. Trace additions of boron have been shown to decrease the as-cast grain size in alpha + beta titanium alloys. The primary focus of this dissertation is to investigate the effect of boron on microstructural stability and thermomechanical processing in beta titanium alloys. Two metastable beta titanium alloys: Ti-15Mo-2.6Nb-3Al-0.2Si (Beta21S) and Ti-5Al-5V-5Mo-3Cr (Ti5553) with 0.1 wt% B and without boron additions were used in this investigation. Significant grain refinement of the as-cast microstructure and precipitation of TiB whiskers along the grain boundaries was observed with boron additions. Beta21S and Beta21S-0.1B alloys were annealed above the beta transus temperature for different times to investigate the effect of boron on grain size stability. The TiB precipitates were very effective in restricting the beta grain boundary mobility by Zener pinning. A model has been developed to predict the maximum grain size as a function of TiB size, orientation, and volume fraction. Good agreement was obtained between model predictions and experimental results. Beta21S alloys were solution treated and aged for different times at several temperatures below the beta transus to study the kinetics of alpha precipitation. Though the TiB phase did not provide any additional nucleation sites for alpha precipitation, the grain refinement obtained by boron additions resulted in accelerated aging. An investigation of the thermomechanical processing behavior showed different deformation mechanisms above the beta transus temperature. The non-boron containing alloys showed a non-uniform and fine recrystallized necklace structure at grain boundaries whereas uniform intragranular recrystallization was observed in boron containing alloys. Micro-voids were observed at the ends of the TiB needles at high temperature, slow strain rates as a result of decohesion at the TiB/matrix interfaces. At low temperatures and faster strain rates micro voids were also formed due to fracture of TiB needles. Finite element analysis on void formation in TiB containing alloys were in agreement with experimental observations. Microhardness and tensile testing of as-cast + forged and aged Beta21S and Ti5553 alloys with and without boron did not show any significant differences in mechanical properties. The primary benefits of boron modified alloys are in as-cast condition.

Electrochemical Oxidation of Resorcinol in Aqueous Medium Using Boron-Doped Diamond Anode: Reaction Kinetics and Process Optimization with Response Surface Methodology

PubMed Central

Körbahti, Bahadır K.; Demirbüken, Pelin

2017-01-01

Electrochemical oxidation of resorcinol in aqueous medium using boron-doped diamond anode (BDD) was investigated in a batch electrochemical reactor in the presence of Na2SO4 supporting electrolyte. The effect of process parameters such as resorcinol concentration (100–500 g/L), current density (2–10 mA/cm2), Na2SO4 concentration (0–20 g/L), and reaction temperature (25–45°C) was analyzed on electrochemical oxidation using response surface methodology (RSM). The optimum operating conditions were determined as 300 mg/L resorcinol concentration, 8 mA/cm2 current density, 12 g/L Na2SO4 concentration, and 34°C reaction temperature. One hundred percent of resorcinol removal and 89% COD removal were obtained in 120 min reaction time at response surface optimized conditions. These results confirmed that the electrochemical mineralization of resorcinol was successfully accomplished using BDD anode depending on the process conditions, however the formation of intermediates and by-products were further oxidized at much lower rate. The reaction kinetics were evaluated at optimum conditions and the reaction order of electrochemical oxidation of resorcinol in aqueous medium using BDD anode was determined as 1 based on COD concentration with the activation energy of 5.32 kJ/mol that was supported a diffusion-controlled reaction. PMID:29082225

Portable mini-chamber for temperature dependent studies using small angle and wide angle x-ray scattering

NASA Astrophysics Data System (ADS)

Dev, Arun Singh; Kumar, Dileep; Potdar, Satish; Pandit, Pallavi; Roth, Stephan V.; Gupta, Ajay

2018-04-01

The present work describes the design and performance of a vacuum compatible portable mini chamber for temperature dependent GISAXS and GIWAXS studies of thin films and multilayer structures. The water cooled body of the chamber allows sample annealing up to 900 K using ultra high vacuum compatible (UHV) pyrolytic boron nitride heater, thus making it possible to study the temperature dependent evolution of structure and morphology of two-dimensional nanostructured materials. Due to its light weight and small size, the chamber is portable and can be accommodated at synchrotron facilities worldwide. A systematic illustration of the versatility of the chamber has been demonstrated at beamline P03, PETRA-III, DESY, Hamburg, Germany. Temperature dependent grazing incidence small angle x-ray scattering (GISAXS) and grazing incidence wide angle x-ray scattering (GIWAXS) measurements were performed on oblique angle deposited Co/Ag multilayer structure, which jointly revealed that the surface diffusion in Co columns in Co/Ag multilayer enhances by increasing temperature from RT to ˜573 K. This results in a morphology change from columnar tilted structure to densely packed morphological isotropic multilayer.

Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

NASA Astrophysics Data System (ADS)

Kuo, Wei-Cheng; Lee, Ming Jay; Wu, Mount-Learn; Lee, Chien-Chieh; Tsao, I.-Yu; Chang, Jenq-Yang

2017-04-01

In this study, heavily boron-doped hydrogenated Ge epilayers are grown on Si substrates at a low growth temperature (220 °C). The quality of the boron-doped epilayers is dependent on the hydrogen flow rate. The optical emission spectroscopic, X-ray diffraction and Hall measurement results demonstrate that better quality boron-doped Ge epilayers can be obtained at low hydrogen flow rates (0 sccm). This reduction in quality is due to an excess of hydrogen in the source gas, which breaks one of the Ge-Ge bonds on the Ge surface, leading to the formation of unnecessary dangling bonds. The structure of the boron doped Ge epilayers is analyzed by transmission electron microscopy and atomic force microscopy. In addition, the performance, based on the I-V characteristics, of Ge/Si photodetectors fabricated with boron doped Ge epilayers produced under different hydrogen flow rates was examined. The photodetectors with boron doped Ge epilayers produced with a low hydrogen flow rate (0 sccm) exhibited a higher responsivity of 0.144 A/W and a lower dark current of 5.33 × 10-7 A at a reverse bias of 1 V.

Penetration of boron from topically applied borate solutions

Treesearch

Stan T. Lebow; Patricia K. Lebow; Steven A. Halverson

2010-01-01

Borate penetration relies on diffusion when borate and glycol-borate preservatives are applied to the surface of wood. This study evaluated the extent of borate penetration in framing lumber as a function of preservative formulation, wood moisture content, and diffusion time after treatment. In Phase I of the study, end-matched specimens were conditioned to target...

Low pressure growth of cubic boron nitride films

NASA Technical Reports Server (NTRS)

Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)

1997-01-01

A method for forming thin films of cubic boron nitride on substrates at low pressures and temperatures. A substrate is first coated with polycrystalline diamond to provide a uniform surface upon which cubic boron nitride can be deposited by chemical vapor deposition. The cubic boron nitride film is useful as a substitute for diamond coatings for a variety of applications in which diamond is not suitable. any tetragonal or hexagonal boron nitride. The cubic boron nitride produced in accordance with the preceding example is particularly well-suited for use as a coating for ultra hard tool bits and abrasives, especially those intended to use in cutting or otherwise fabricating iron.

Effect of Boron on the Strength and Toughness of Direct-Quenched Low-Carbon Niobium Bearing Ultra-High-Strength Martensitic Steel

NASA Astrophysics Data System (ADS)

Hannula, Jaakko; Kömi, Jukka; Porter, David A.; Somani, Mahesh C.; Kaijalainen, Antti; Suikkanen, Pasi; Yang, Jer-Ren; Tsai, Shao-Pu

2017-11-01

The effect of boron on the microstructures and mechanical properties of laboratory-control-rolled and direct-quenched 6-mm-thick steels containing 0.08 wt pct C and 0.02 wt pct Nb were studied. The boron contents were 24 ppm and a residual amount of 4 ppm. Two different finish rolling temperatures (FRTs) of 1093 K and 1193 K (820 °C and 920 °C) were used in the hot rolling trials to obtain different levels of pancaked austenite prior to DQ. Continuous cooling transformation (CCT) diagrams were constructed to reveal the effect of boron on the transformation behavior of these steels. Microstructural characterization was carried out using various microscopy techniques, such as light optical microscopy (LOM) and scanning electron microscopy-electron backscatter diffraction (SEM-EBSD). The resultant microstructures after hot rolling were mixtures of autotempered martensite and lower bainite (LB), having yield strengths in the range 918 to 1067 MPa with total elongations to fracture higher than 10 pct. The lower FRT of 1093 K (820 °C) produced better combinations of strength and toughness as a consequence of a higher degree of pancaking in the austenite. Removal of boron lowered the 34 J/cm2 Charpy-V impact toughness transition temperature from 206 K to 158 K (-67 °C to -115 °C) when the finishing rolling temperature of 1093 K (820 °C) was used without any loss in the strength values compared to the boron-bearing steel. This was due to the finer and more uniform grain structure in the boron-free steel. Contrary to expectations, the difference was not caused by the formation of borocarbide precipitates, as verified by transmission electron microscopy (TEM) investigations, but through the grain coarsening effect of boron.

Boron uptake, localization, and speciation in marine brown algae.

PubMed

Miller, Eric P; Wu, Youxian; Carrano, Carl J

2016-02-01

In contrast to the generally boron-poor terrestrial environment, the concentration of boron in the marine environment is relatively high (0.4 mM) and while there has been extensive interest in its use as a surrogate of pH in paleoclimate studies in the context of climate change-related questions, the relatively depth independent, and the generally non-nutrient-like concentration profile of this element have led to boron being neglected as a potentially biologically relevant element in the ocean. Among the marine plant-like organisms the brown algae (Phaeophyta) are one of only five lineages of photosynthetic eukaryotes to have evolved complex multicellularity. Many of unusual and often unique features of brown algae are attributable to this singular evolutionary history. These adaptations are a reflection of the marine coastal environment which brown algae dominate in terms of biomass. Consequently, brown algae are of fundamental importance to oceanic ecology, geochemistry, and coastal industry. Our results indicate that boron is taken up by a facilitated diffusion mechanism against a considerable concentration gradient. Furthermore, in both Ectocarpus and Macrocystis some boron is most likely bound to cell wall constituent alginate and the photoassimilate mannitol located in sieve cells. Herein, we describe boron uptake, speciation, localization and possible biological function in two species of brown algae, Macrocystis pyrifera and Ectocarpus siliculosus.

Analysis of boron distribution in vivo for boron neutron capture therapy using two different boron compounds by secondary ion mass spectrometry.

PubMed

Yokoyama, Kunio; Miyatake, Shin-Ichi; Kajimoto, Yoshinaga; Kawabata, Shinji; Doi, Atsushi; Yoshida, Toshiko; Okabe, Motonori; Kirihata, Mitsunori; Ono, Koji; Kuroiwa, Toshihiko

2007-01-01

The efficiency of boron neutron capture therapy (BNCT) for malignant gliomas depends on the selective and absolute accumulation of (10)B atoms in tumor tissues. Only two boron compounds, BPA and BSH, currently can be used clinically. However, the detailed distributions of these compounds have not been determined. Here we used secondary ion mass spectrometry (SIMS) to determine the histological distribution of (10)B atoms derived from the boron compounds BSH and BPA. C6 tumor-bearing rats were given 500 mg/kg of BPA or 100 mg/kg of BSH intraperitoneally; 2.5 h later, their brains were sectioned and subjected to SIMS. In the main tumor mass, BPA accumulated heterogeneously, while BSH accumulated homogeneously. In the peritumoral area, both BPA and BSH accumulated measurably. Interestingly, in this area, BSH accumulated distinctively in a diffuse manner even 800 microm distant from the interface between the main tumor and normal brain. In the contralateral brain, BPA accumulated measurably, while BSH did not. In conclusion, both BPA and BSH each have advantages and disadvantages. These compounds are considered to be essential as boron delivery agents independently for clinical BNCT. There is some rationale for the simultaneous use of both compounds in clinical BNCT for malignant gliomas.

Design and fabrication of an innovative and environmental friendly adsorbent for boron removal.

PubMed

Wei, Yu-Ting; Zheng, Yu-Ming; Chen, J Paul

2011-03-01

Boron can pose adverse effects on human beings and plants species. It exists in various water environments and is difficult to be removed by conventional technologies. In this study, an efficient and environmental friendly sorbent was fabricated by the functionalization of a natural biopolymer, chitosan, with N-methylglucamine through atom transfer radical polymerization. The SEM and BET studies revealed that the sorbent had a rougher surface and a more porous structure than the chitosan. At the optimum neutral pH, the maximum sorption capacity was as high as 3.25 mmol/g, much higher than the commercial boron selective resins (e.g., Amberlite IRA-743) and many other synthesized sorbents. Almost 90% of boron sorption occurred within 8 h and the equilibrium was established in 12 h, which was well described by an intraparticle surface diffusion model. The presence of sodium chloride and sodium nitrate had no effect on the boron removal. The boron concentration in seawater could be reduced to less than 0.5 mg/L from 4.8 mg/L when a sorbent dosage of 1.2 g/L was used. It was therefore concluded that the sorption technology from this study could be promising for boron removal from aqueous solutions. Copyright © 2011 Elsevier Ltd. All rights reserved.

Experimental Studies on the Synthesis and Performance of Boron-containing High Temperature Resistant Resin Modified by Hydroxylated Tung Oil

NASA Astrophysics Data System (ADS)

Zhang, J. X.; Y Ren, Z.; Zheng, G.; Wang, H. F.; Jiang, L.; Fu, Y.; Yang, W. Q.; He, H. H.

2017-12-01

In this work, hydroxylated tung oil (HTO) modified high temperature resistant resin containing boron and benzoxazine was synthesized. HTO and ethylenediamine was used to toughen the boron phenolic resin with specific reaction. The structure of product was studied by Fourier-transform infrared spectroscopy(FTIR), and the heat resistance was tested by Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis(TGA). The results indicated that the conjugated triene structure of HTO was involved in the crosslinking of the heating curing progress, and in addition, the open-loop polymerization reaction of benzoxazine resin during heating can effectively reduce the curing temperature of the resin and reduce the release of small molecule volatiles, which is advantageous to follow-up processing. DSC data showed that the initial decomposition temperature of the resin is 350-400 °C, the carbon residue rate under 800 °C was 65%. It indicated that the resin has better heat resistance than normal boron phenolic resin. The resin can be used as an excellent ablative material and anti-friction material and has a huge application market in many fields.

Oxidative Unzipping and Transformation of High Aspect Ratio Boron Nitride Nanotubes into “White Graphene Oxide” Platelets

PubMed Central

Nautiyal, Pranjal; Loganathan, Archana; Agrawal, Richa; Boesl, Benjamin; Wang, Chunlei; Agarwal, Arvind

2016-01-01

Morphological and chemical transformations in boron nitride nanotubes under high temperature atmospheric conditions is probed in this study. We report atmospheric oxygen induced cleavage of boron nitride nanotubes at temperatures exceeding 750 °C for the first time. Unzipping is then followed by coalescence of these densely clustered multiple uncurled ribbons to form stacks of 2D sheets. FTIR and EDS analysis suggest these 2D platelets to be Boron Nitride Oxide platelets, with analogous structure to Graphene Oxide, and therefore we term them as “White Graphene Oxide” (WGO). However, not all BNNTs deteriorate even at temperatures as high as 1000 °C. This leads to the formation of a hybrid nanomaterial system comprising of 1D BN nanotubes and 2D BN oxide platelets, potentially having advanced high temperature sensing, radiation shielding, mechanical strengthening, electron emission and thermal management applications due to synergistic improvement of multi-plane transport and mechanical properties. This is the first report on transformation of BNNT bundles to a continuous array of White Graphene Oxide nanoplatelet stacks. PMID:27388704

Oxidative Unzipping and Transformation of High Aspect Ratio Boron Nitride Nanotubes into “White Graphene Oxide” Platelets

NASA Astrophysics Data System (ADS)

Nautiyal, Pranjal; Loganathan, Archana; Agrawal, Richa; Boesl, Benjamin; Wang, Chunlei; Agarwal, Arvind

2016-07-01

Morphological and chemical transformations in boron nitride nanotubes under high temperature atmospheric conditions is probed in this study. We report atmospheric oxygen induced cleavage of boron nitride nanotubes at temperatures exceeding 750 °C for the first time. Unzipping is then followed by coalescence of these densely clustered multiple uncurled ribbons to form stacks of 2D sheets. FTIR and EDS analysis suggest these 2D platelets to be Boron Nitride Oxide platelets, with analogous structure to Graphene Oxide, and therefore we term them as “White Graphene Oxide” (WGO). However, not all BNNTs deteriorate even at temperatures as high as 1000 °C. This leads to the formation of a hybrid nanomaterial system comprising of 1D BN nanotubes and 2D BN oxide platelets, potentially having advanced high temperature sensing, radiation shielding, mechanical strengthening, electron emission and thermal management applications due to synergistic improvement of multi-plane transport and mechanical properties. This is the first report on transformation of BNNT bundles to a continuous array of White Graphene Oxide nanoplatelet stacks.

Method of chemical vapor deposition of boron nitride using polymeric cyanoborane

DOEpatents

Maya, L.

1994-06-14

Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film. 11 figs.

Study of different thermal processes on boron-doped PERL cells

NASA Astrophysics Data System (ADS)

Li, Wenjia; Wang, Zhenjiao; Han, Peiyu; Lu, Hongyan; Yang, Jian; Guo, Ying; Shi, Zhengrong; Li, Guohua

2014-08-01

In this paper, three kinds of thermal processes for boron-doped PERL cells were investigated. These are the forming gas annealing (FGA), the rapid thermal (RTP) and the low temperature annealing processes. FGA was introduced after laser ablation and doping in order to increase minority carrier lifetime by hydrogenating the trapping centers. Subsequent evaluation revealed considerable enhancement of minority carrier lifetime (from 150 μs to 240 μs) and the implied Voc (from 660 mV to 675 mV). After aluminum sputtering, three actual peak temperatures (370 °C, 600 °C and 810 °C) of RTP (as it occurs in the compressed air environment used in our experiment) were utilized to form a contact between the metal and the semi-conductor. It is concluded that only low temperature (lower than 600 °C) firing could create boron back surface field and high quality rear reflector. Lastly, a method of improving the performance of finished PERL cells which did not experience high temperature (over 800 °C) firing was investigated. Finished cells undergone low temperature annealing in N2 atmosphere at 150 °C for 15 min produced 0.44% absolute increase in PERL cells. The enhancement of low temperature annealing originally comes from the activation of passivated boron which is deactivated during FGA.

Microfluid oscillator based on thermocapillarity

NASA Astrophysics Data System (ADS)

Huang, Teng-chao; Shen, Yi-bing; Liu, Xu; Bai, Jian; Hou, Xiyun; Ye, Hui; Lou, Di

2004-12-01

A novel micro fluid oscillator with a boron diffused resistor is proposed in this paper. The actuation principle is based on the combination of Marangoni effect. The contemporary microfabrication technique enables us to fabricate microheater tiny enough to control temperature so quickly and precisely in micro length scale. The devices exhibiting the Marangoni effect in square channels were designed and fabricated from one silicon substrate and two quartz substrates. And the three substrates were aligned, bonded and packaged for testing. In this actuator there is a pair of micro-heaters to produce a thermal gradient along the slit. The driving wattage is about 0.1W and the resistors can make a temperature difference about 100 degrees during 0.1s with a pulsewidth of 20us for 0.1A current pulses. Then the movement is driven towards the lower temperature direction by the interfacial tension of the air-liquid interface. This micro fluid actuator can play important role in many liquid micro-systems such as in micromotor and micro valve.

Process research of non-Czochralski silicon material

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1986-01-01

Simultaneous diffusion of liquid precursors containing phosphorus and boron into dendritic web silicon to form solar cell structures was investigated. A simultaneous junction formation techniques was developed. It was determined that to produce high quality cells, an annealing cycle (nominal 800 C for 30 min) should follow the diffusion process to anneal quenched-in defects. Two ohm-cm n-base cells were fabricated with efficiencies greater than 15%. A cost analysis indicated that the simultansous diffusion process costs can be as low as 65% of the costs of the sequential diffusion process.

Porous boron doped diamonds as metal-free catalysts for the oxygen reduction reaction in alkaline solution

NASA Astrophysics Data System (ADS)

Suo, Ni; Huang, Hao; Wu, Aimin; Cao, Guozhong; Hou, Xiaoduo; Zhang, Guifeng

2018-05-01

Porous boron doped diamonds (BDDs) were obtained on foam nickel substrates with a porosity of 80%, 85%, 90% and 95% respectively by hot filament chemical vapor deposition (HFCVD) technology. Scanning electron microscopy (SEM) reveals that uniform and compact BDDs with a cauliflower-like morphology have covered the overall frame of the foam nickel substrates. Raman spectroscopy shows that the BDDs have a poor crystallinity due to heavily doping boron. X-ray photoelectron spectroscopy (XPS) analysis effectively demonstrates that boron atoms can be successfully incorporated into the crystal lattice of diamonds. Electrochemical measurements indicate that the oxygen reduction potential is unaffected by the specific surface area (SSA), and both the onset potential and the limiting diffusion current density are enhanced with increasing SSA. It is also found that the durability and methanol tolerance of the boron doped diamond catalysts are attenuated as the increasing of SSA. The SSA of the catalyst is directly proportional to the oxygen reduction activity and inversely to the durability and methanol resistance. These results provide a reference to the application of porous boron doped diamonds as potential cathodic catalysts for the oxygen reduction reaction in alkaline solution by adjusting the SSA.

Evaluation of Aluminum-Boron Carbide Neutron Absorbing Materials for Interim Storage of Used Nuclear Fuel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lumin; Wierschke, Jonathan Brett

2015-04-08

The objective of this work was to understand the corrosion behavior of Boral® and Bortec® neutron absorbers over long-term deployment in a used nuclear fuel dry cask storage environment. Corrosion effects were accelerated by flowing humidified argon through an autoclave at temperatures up to 570°C. Test results show little corrosion of the aluminum matrix but that boron is leaching out of the samples. Initial tests performed at 400 and 570°C were hampered by reduced flow caused by the rapid build-up of solid deposits in the outlet lines. Analysis of the deposits by XRD shows that the deposits are comprised ofmore » boron trioxide and sassolite (H 3BO 3). The collection of boron- containing compounds in the outlet lines indicated that boron was being released from the samples. Observation of the exposed samples using SEM and optical microscopy show the growth of new phases in the samples. These phases were most prominent in Bortec® samples exposed at 570°C. Samples of Boral® exposed at 570°C showed minimal new phase formation but showed nearly the complete loss of boron carbide particles. Boron carbide loss was also significant in Boral samples at 400°C. However, at 400°C phases similar to those found in Bortec® were observed. The rapid loss of the boron carbide particles in the Boral® is suspected to inhibit the formation of the new secondary phases. However, Material samples in an actual dry cask environment would be exposed to temperatures closer to 300°C and less water than the lowest test. The results from this study conclude that at the temperature and humidity levels present in a dry cask environment, corrosion and boron leaching will have no effect on the performance of Boral® and Bortec® to maintain criticality control.« less

Computational Nanomechanics of Carbon Nanotubes and Composites

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Wei, Chenyu; Cho, Kyeongjae; Biegel, Bryan (Technical Monitor)

2002-01-01

Nanomechanics of individual carbon and boron-nitride nanotubes and their application as reinforcing fibers in polymer composites has been reviewed with interplay of theoretical modeling, computer simulations and experimental observations. The emphasis in this work is on elucidating the multi-length scales of the problems involved, and of different simulation techniques that are needed to address specific characteristics of individual nanotubes and nanotube polymer-matrix interfaces. Classical molecular dynamics simulations are shown to be sufficient to describe the generic behavior such as strength and stiffness modulus but are inadequate to describe elastic limit and nature of plastic buckling at large strength. Quantum molecular dynamics simulations are shown to bring out explicit atomic nature dependent behavior of these nanoscale materials objects that are not accessible either via continuum mechanics based descriptions or through classical molecular dynamics based simulations. As examples, we discus local plastic collapse of carbon nanotubes under axial compression and anisotropic plastic buckling of boron-nitride nanotubes. Dependence of the yield strain on the strain rate is addressed through temperature dependent simulations, a transition-state-theory based model of the strain as a function of strain rate and simulation temperature is presented, and in all cases extensive comparisons are made with experimental observations. Mechanical properties of nanotube-polymer composite materials are simulated with diverse nanotube-polymer interface structures (with van der Waals interaction). The atomistic mechanisms of the interface toughening for optimal load transfer through recycling, high-thermal expansion and diffusion coefficient composite formation above glass transition temperature, and enhancement of Young's modulus on addition of nanotubes to polymer are discussed and compared with experimental observations.

Effect of Boron on the Hot Ductility of Resulfurized Low-Carbon Free-Cutting Steel

NASA Astrophysics Data System (ADS)

Liu, Hai-tao; Chen, Wei-qing

2015-09-01

The hot ductility of resulfurized low-carbon free-cutting steel with boron additives is studied in the temperature range 850 - 1200°C with the help of a Gleeble-1500 thermomechanical simulator. The introduction of boron increases hot ductility, especially at 900 - 1050°C. In the single-phase austenitic region, this effect is caused by segregation of boron over grain boundaries, acceleration of dynamic recrystallization, and solid-solution softening of deformed austenite.

Response surface modeling of boron adsorption from aqueous solution by vermiculite using different adsorption agents: Box-Behnken experimental design.

PubMed

Demirçivi, Pelin; Saygılı, Gülhayat Nasün

2017-07-01

In this study, a different method was applied for boron removal by using vermiculite as the adsorbent. Vermiculite, which was used in the experiments, was not modified with adsorption agents before boron adsorption using a separate process. Hexadecyltrimethylammonium bromide (HDTMA) and Gallic acid (GA) were used as adsorption agents for vermiculite by maintaining the solid/liquid ratio at 12.5 g/L. HDTMA/GA concentration, contact time, pH, initial boron concentration, inert electrolyte and temperature effects on boron adsorption were analyzed. A three-factor, three-level Box-Behnken design model combined with response surface method (RSM) was employed to examine and optimize process variables for boron adsorption from aqueous solution by vermiculite using HDTMA and GA. Solution pH (2-12), temperature (25-60 °C) and initial boron concentration (50-8,000 mg/L) were chosen as independent variables and coded x 1 , x 2 and x 3 at three levels (-1, 0 and 1). Analysis of variance was used to test the significance of variables and their interactions with 95% confidence limit (α = 0.05). According to the regression coefficients, a second-order empirical equation was evaluated between the adsorption capacity (q i ) and the coded variables tested (x i ). Optimum values of the variables were also evaluated for maximum boron adsorption by vermiculite-HDTMA (HDTMA-Verm) and vermiculite-GA (GA-Verm).

High-Pressure Design of Advanced BN-Based Materials.

PubMed

Kurakevych, Oleksandr O; Solozhenko, Vladimir L

2016-10-20

The aim of the present review is to highlight the state of the art in high-pressure design of new advanced materials based on boron nitride. Recent experimental achievements on the governing phase transformation, nanostructuring and chemical synthesis in the systems containing boron nitride at high pressures and high temperatures are presented. All these developments allowed discovering new materials, e.g., ultrahard nanocrystalline cubic boron nitride (nano-cBN) with hardness comparable to diamond, and superhard boron subnitride B 13 N₂. Thermodynamic and kinetic aspects of high-pressure synthesis are described based on the data obtained by in situ and ex situ methods. Mechanical and thermal properties (hardness, thermoelastic equations of state, etc.) are discussed. New synthetic perspectives, combining both soft chemistry and extreme pressure-temperature conditions are considered.

Effect of boron on the structural and magnetic properties of Co{sub 2}FeSi{sub 1-x}B{sub x} Heusler alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramudu, M., E-mail: macrams2@gmail.com; Raja, M. Manivel; Kamat, S. V.

2016-05-23

The partial substitution of Si with B on the structural and magnetic properties of Co{sub 2}FeSi{sub 1-x}Bx (x = 0-0.5) alloys was systematically investigated. X-ray and microstructural investigations show the presence of second phase at the grain boundaries which increases with increasing boron content. From thermal analysis studies, it was observed that L2{sub 1}-B2 ordering temperature remain constant whereas the melting point decreases with increase in boron addition and merges with ordering temperature at x = 0.5. The increase in T{sub C} for the alloys x ≥ 0.25 was attributed to the increase in second phase due to boron.

Experimental pressure-temperature phase diagram of boron: resolving the long-standing enigma

PubMed Central

Parakhonskiy, Gleb; Dubrovinskaia, Natalia; Bykova, Elena; Wirth, Richard; Dubrovinsky, Leonid

2011-01-01

Boron, discovered as an element in 1808 and produced in pure form in 1909, has still remained the last elemental material, having stable natural isotopes, with the ground state crystal phase to be unknown. It has been a subject of long-standing controversy, if α-B or β-B is the thermodynamically stable phase at ambient pressure and temperature. In the present work this enigma has been resolved based on the α-B-to- β-B phase boundary line which we experimentally established in the pressure interval of ∼4 GPa to 8 GPa and linearly extrapolated down to ambient pressure. In a series of high pressure high temperature experiments we synthesised single crystals of the three boron phases (α-B, β-B, and γ-B) and provided evidence of higher thermodynamic stability of α-B. Our work opens a way for reproducible synthesis of α-boron, an optically transparent direct band gap semiconductor with very high hardness, thermal and chemical stability. PMID:22355614

Toward ambient temperature operation with all-solid-state lithium metal batteries with a sp3 boron-based solid single ion conducting polymer electrolyte

NASA Astrophysics Data System (ADS)

Zhang, Yunfeng; Cai, Weiwei; Rohan, Rupesh; Pan, Meize; Liu, Yuan; Liu, Xupo; Li, Cuicui; Sun, Yubao; Cheng, Hansong

2016-02-01

The ionic conductivity decay problem of poly(ethylene oxide) (PEO)-based solid polymer electrolytes (SPEs) when increase the lithium salt of the SPEs up to high concentration is here functionally overcome by the incorporation of a charge delocalized sp3 boron based single ion conducting polymer electrolyte (SIPE) with poly(ethylene oxide) to fabricate solid-state sp3 boron based SIPE membranes (S-BSMs). By characterizations, particularly differential scanning calorimeter (DSC) and ionic conductivity studies, the fabricated S-BSMs showed decreased melting points and increased ionic conductivity as steadily increase the content of sp3 boron based SIPE, which significantly improved the low temperature performance of the all-solid-state lithium batteries. The fabricated Li | S-BSMs | LiFePO4 cells exhibit highly electrochemical stability and excellent cycling at temperature below melting point of PEO, which has never been reported so far for SIPEs based all-solid-state lithium batteries.

Computational Modeling in Structural Materials Processing

NASA Technical Reports Server (NTRS)

Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

1997-01-01

High temperature materials such as silicon carbide, a variety of nitrides, and ceramic matrix composites find use in aerospace, automotive, machine tool industries and in high speed civil transport applications. Chemical vapor deposition (CVD) is widely used in processing such structural materials. Variations of CVD include deposition on substrates, coating of fibers, inside cavities and on complex objects, and infiltration within preforms called chemical vapor infiltration (CVI). Our current knowledge of the process mechanisms, ability to optimize processes, and scale-up for large scale manufacturing is limited. In this regard, computational modeling of the processes is valuable since a validated model can be used as a design tool. The effort is similar to traditional chemically reacting flow modeling with emphasis on multicomponent diffusion, thermal diffusion, large sets of homogeneous reactions, and surface chemistry. In the case of CVI, models for pore infiltration are needed. In the present talk, examples of SiC nitride, and Boron deposition from the author's past work will be used to illustrate the utility of computational process modeling.

Boron/Carbon/Silicon/Nitrogen Ceramics And Precursors

NASA Technical Reports Server (NTRS)

Riccitiello, Salvatore; Hsu, Ming TA; Chen, Timothy S.

1996-01-01

Ceramics containing various amounts of boron, carbon, silicon, and nitrogen made from variety of polymeric precursors. Synthesized in high yield from readily available and relatively inexpensive starting materials. Stable at room temperature; when polymerized, converted to ceramics in high yield. Ceramics resist oxidation and other forms of degradation at high temperatures; used in bulk to form objects or to infiltrate other ceramics to obtain composites having greater resistance to oxidation and high temperatures.

Synthesis of n-type semiconductor diamond single crystal under high pressure and high temperature

NASA Astrophysics Data System (ADS)

Li, Yong; Li, Shangsheng; Song, Mousheng; She, Yanchao; Wang, Qiang; Guan, Xuemao

2017-12-01

In this paper, diamond single crystal co-doped with sulfur and boron was successfully synthesized at the fixed pressure of 6.0 GPa and temperature range of 1535 K. Sulfur was detected in the co-doped diamond by Fourier Transform Infrared Spectroscopy (FTIR) and the corresponding characteristic peak located at 848 cm-1. Interestingly, Hall effect measurements indicated that the diamond co-doped with sulfur and boron exhibited n-type semiconductor behaviour. Furthermore, the Hall mobility and carrier concentration of the co-doped diamond higher than those of the boron-doping diamond.

Containerless high temperature property measurements

NASA Technical Reports Server (NTRS)

Nordine, Paul C.; Weber, J. K. Richard; Krishnan, Shankar; Anderson, Collin D.

1991-01-01

Containerless processing in the low gravity environment of space provides the opportunity to increase the temperature at which well controlled processing of and property measurements on materials is possible. This project was directed towards advancing containerless processing and property measurement techniques for application to materials research at high temperatures in space. Containerless high temperature material property studies include measurements of the vapor pressure, melting temperature, optical properties, and spectral emissivities of solid boron. The reaction of boron with nitrogen was also studied by laser polarimetric measurement of boron nitride film growth. The optical properties and spectral emissivities were measured for solid and liquid silicon, niobium, and zirconium; liquid aluminum and titanium; and liquid Ti-Al alloys of 5 to 60 atomic pct. titanium. Alternative means for noncontact temperature measurement in the absence of material emissivity data were evaluated. Also, the application of laser induced fluorescence for component activity measurements in electromagnetic levitated liquids was studied, along with the feasibility of a hybrid aerodynamic electromagnetic levitation technique.

BN Bonded BN fiber article from boric oxide fiber

DOEpatents

Hamilton, Robert S.

1978-12-19

A boron nitride bonded boron nitride fiber article and the method for its manufacture which comprises forming a shaped article with a composition comprising boron oxide fibers and boric acid, heating the composition in an anhydrous gas to a temperature above the melting point of the boric acid and nitriding the resulting article in ammonia gas.

Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

NASA Technical Reports Server (NTRS)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1993-01-01

Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

Stable synthesis of few-layered boron nitride nanotubes by anodic arc discharge.

PubMed

Yeh, Yao-Wen; Raitses, Yevgeny; Koel, Bruce E; Yao, Nan

2017-06-08

Boron nitride nanotubes (BNNTs) were successfully synthesized by a dc arc discharge using a boron-rich anode as synthesis feedstock in a nitrogen gas environment at near atmospheric pressure. The synthesis was achieved independent of the cathode material suggesting that under such conditions the arc operates in so-called anodic mode with the anode material being consumed by evaporation due to the arc heating. To sustain the arc current by thermionic electron emission, the cathode has to be at sufficiently high temperature, which for a typical arc current density of ~100 A/cm 2 , is above the boron melting point (2350 K). With both electrodes made from the same boron-rich alloy, we found that the arc operation unstable due to frequent sticking between two molten electrodes and formation of molten droplets. Stable and reliable arc operation and arc synthesis were achieved with the boron-rich anode and the cathode made from a refractory metal which has a melting temperature above the melting point of boron. Ex-situ characterization of synthesized BNNTs with electron microscopy and Raman spectroscopy revealed that independent of the cathode material, the tubes are primarily single and double walled. The results also show evidence of root-growth of BNNTs produced in the arc discharge.

Numerical studies on alpha production from high energy proton beam interaction with Boron

NASA Astrophysics Data System (ADS)

Moustaizis, S. D.; Lalousis, P.; Hora, H.; Korn, G.

2017-05-01

Numerical investigations on high energy proton beam interaction with high density Boron plasma allows to simulate conditions concerning the alpha production from recent experimental measurements . The experiments measure the alpha production due to p11B nuclear fusion reactions when a laser-driven high energy proton beam interacts with Boron plasma produced by laser beam interaction with solid Boron. The alpha production and consequently the efficiency of the process depends on the initial proton beam energy, proton beam density, the Boron plasma density and temperature, and their temporal evolution. The main advantage for the p11B nuclear fusion reaction is the production of three alphas with total energy of 8.9 MeV, which could enhance the alpha heating effect and improve the alpha production. This particular effect is termed in the international literature as the alpha avalanche effect. Numerical results using a multi-fluid, global particle and energy balance, code shows the alpha production efficiency as a function of the initial energy of the proton beam, the Boron plasma density, the initial Boron plasma temperature and the temporal evolution of the plasma parameters. The simulations enable us to determine the interaction conditions (proton beam - B plasma) for which the alpha heating effect becomes important.

Thermal design of composite material high temperature attachments

NASA Technical Reports Server (NTRS)

1972-01-01

An evaluation has been made of the thermal aspects of utilizing advanced filamentary composite materials as primary structures on the shuttle vehicle. The technical objectives of this study are to: (1) establish and design concepts for maintaining material temperatures within allowable limits at TPS attachments and or penetrations applicable to the space shuttle; and (2) verify the thermal design analysis by testing selected concepts. Specific composite materials being evaluated are boron epoxy, graphite/epoxy, boron polyimide, and boron aluminum; graphite/polyimide has been added to this list for property data identification and preliminary evaluation of thermal design problems. The TPS standoff to composite structure attachment over-temperature problem is directly related to TPS maximum surface temperature. To provide a thermally comprehensive evaluation of attachment temperature characteristics, maximum surface temperatures of 900 F, 1200 F, 1800 F, 2500 F and 3000 F are considered in this study. This range of surface temperatures and the high and low maximum temperature capability of the selected composite materials will result in a wide range of thermal requirements for composite/TPS standoff attachments.

High Kinetic Energy Penetrator Shielding and High Wear Resistance Materials Fabricated with Boron Nitride Nanotubes (BNNTS) and BNNT Polymer Composites

NASA Technical Reports Server (NTRS)

Kang, Jin Ho (Inventor); Sauti, Godfrey (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor); Park, Cheol (Inventor); Bryant, Robert George (Inventor); Lowther, Sharon E. (Inventor)

2015-01-01

Boron nitride nanotubes (BNNTs), boron nitride nanoparticles (BNNPs), carbon nanotubes (CNTs), graphites, or combinations, are incorporated into matrices of polymer, ceramic or metals. Fibers, yarns, and woven or nonwoven mats of BNNTs are used as toughening layers in penetration resistant materials to maximize energy absorption and/or high hardness layers to rebound or deform penetrators. They can be also used as reinforcing inclusions combining with other polymer matrices to create composite layers like typical reinforcing fibers such as Kevlar.RTM., Spectra.RTM., ceramics and metals. Enhanced wear resistance and usage time are achieved by adding boron nitride nanomaterials, increasing hardness and toughness. Such materials can be used in high temperature environments since the oxidation temperature of BNNTs exceeds 800.degree. C. in air. Boron nitride based composites are useful as strong structural materials for anti-micrometeorite layers for spacecraft and space suits, ultra strong tethers, protective gear, vehicles, helmets, shields and safety suits/helmets for industry.

Boric acid permeation in forward osmosis membrane processes: modeling, experiments, and implications.

PubMed

Jin, Xue; Tang, Chuyang Y; Gu, Yangshuo; She, Qianhong; Qi, Saren

2011-03-15

Forward osmosis (FO) is attracting increasing interest for its potential applications in desalination. In FO, permeation of contaminants from feed solution into draw solution through the semipermeable membrane can take place simultaneously with water diffusion. Understanding the contaminants transport through and rejection by FO membrane has significant technical implications in the way to separate clean water from the diluted draw solution. In this study, a model was developed to predict boron flux in FO operation. A strong agreement between modeling results and experimental data indicates that the model developed in this study can accurately predict the boron transport through FO membranes. Furthermore, the model can guide the fabrication of improved FO membranes with decreased boron permeability and structural parameter to minimize boron flux. Both theoretical model and experimental results demonstrated that when membrane active layer was facing draw solution, boron flux was substantially greater compared to the other membrane orientation due to more severe internal concentration polarization. In this investigation, for the first time, rejection of contaminants was defined in FO processes. This is critical to compare the membrane performance between different membranes and experimental conditions.

Fracture mechanics correlation of boron/aluminum coupons containing stress risers

NASA Technical Reports Server (NTRS)

Adsit, N. R.; Waszczak, J. P.

1975-01-01

The mechanical behavior of boron/aluminum near stress risers has been studied and reported. This effort was directed toward defining the tensile behavior of both unidirectional and (0/ plus or minus 45) boron/aluminum using linear elastic fracture mechanics (LEFM). The material used was 5.6-mil boron in 6061 aluminum, consolidated using conventional diffusion bonding techniques. Mechanical properties are reported for both unidirectional and (0/ plus or minus 45) boron/aluminum, which serve as control data for the fracture mechanics predictions. Three different flawed specimen types were studied. In each case the series of specimens remained geometrically similar to eliminate variations in finite size correction factors. The fracture data from these tests were reduced using two techniques. They both used conventional LEFM methods, but the existence of a characteristic flaw was assumed in one case and not the other. Both the data and the physical behavior of the specimens support the characteristic flaw hypothesis. Cracks were observed growing slowly in the (0/ plus or minus 45) laminates, until a critical crack length was reached at which time catastrophic failure occurred.

Oxidation-induced contraction and strengthening of boron fibers

NASA Technical Reports Server (NTRS)

Dicarlo, J. A.; Wagner, T. C.

1981-01-01

An investigation was conducted to measure and understand the physical and mechanical effects that occur in boron fibers during and after thermal treatment in a controlled oxygen argon gaseous mixture. Of principal concern was the optimization of this treatment as a secondary processing method for significantly improving fiber tensile strength. Strengthening was accomplished by an oxidation induced axial contraction of the fiber and a resulting axial compression of strength limiting flaws within the fiber's tungsten boride core. Various physical observations were used to develop mechanistic models for oxidation, contraction, and flow formation. Processing guidelines are discussed for possibly exceeding the 5.5 GN/sq m strength limit and also for achieving fiber strengthening during application of boron containing diffusion barrier coatings.

Ablation-resistant carbide Zr0.8Ti0.2C0.74B0.26 for oxidizing environments up to 3,000 °C

NASA Astrophysics Data System (ADS)

Zeng, Yi; Wang, Dini; Xiong, Xiang; Zhang, Xun; Withers, Philip J.; Sun, Wei; Smith, Matthew; Bai, Mingwen; Xiao, Ping

2017-06-01

Ultra-high temperature ceramics are desirable for applications in the hypersonic vehicle, rockets, re-entry spacecraft and defence sectors, but few materials can currently satisfy the associated high temperature ablation requirements. Here we design and fabricate a carbide (Zr0.8Ti0.2C0.74B0.26) coating by reactive melt infiltration and pack cementation onto a C/C composite. It displays superior ablation resistance at temperatures from 2,000-3,000 °C, compared to existing ultra-high temperature ceramics (for example, a rate of material loss over 12 times better than conventional zirconium carbide at 2,500 °C). The carbide is a substitutional solid solution of Zr-Ti containing carbon vacancies that are randomly occupied by boron atoms. The sealing ability of the ceramic's oxides, slow oxygen diffusion and a dense and gradient distribution of ceramic result in much slower loss of protective oxide layers formed during ablation than other ceramic systems, leading to the superior ablation resistance.

Ablation-resistant carbide Zr0.8Ti0.2C0.74B0.26 for oxidizing environments up to 3,000 °C.

PubMed

Zeng, Yi; Wang, Dini; Xiong, Xiang; Zhang, Xun; Withers, Philip J; Sun, Wei; Smith, Matthew; Bai, Mingwen; Xiao, Ping

2017-06-14

Ultra-high temperature ceramics are desirable for applications in the hypersonic vehicle, rockets, re-entry spacecraft and defence sectors, but few materials can currently satisfy the associated high temperature ablation requirements. Here we design and fabricate a carbide (Zr 0.8 Ti 0.2 C 0.74 B 0.26 ) coating by reactive melt infiltration and pack cementation onto a C/C composite. It displays superior ablation resistance at temperatures from 2,000-3,000 °C, compared to existing ultra-high temperature ceramics (for example, a rate of material loss over 12 times better than conventional zirconium carbide at 2,500 °C). The carbide is a substitutional solid solution of Zr-Ti containing carbon vacancies that are randomly occupied by boron atoms. The sealing ability of the ceramic's oxides, slow oxygen diffusion and a dense and gradient distribution of ceramic result in much slower loss of protective oxide layers formed during ablation than other ceramic systems, leading to the superior ablation resistance.

Ablation-resistant carbide Zr0.8Ti0.2C0.74B0.26 for oxidizing environments up to 3,000 °C

PubMed Central

Zeng, Yi; Wang, Dini; Xiong, Xiang; Zhang, Xun; Withers, Philip J.; Sun, Wei; Smith, Matthew; Bai, Mingwen; Xiao, Ping

2017-01-01

Ultra-high temperature ceramics are desirable for applications in the hypersonic vehicle, rockets, re-entry spacecraft and defence sectors, but few materials can currently satisfy the associated high temperature ablation requirements. Here we design and fabricate a carbide (Zr0.8Ti0.2C0.74B0.26) coating by reactive melt infiltration and pack cementation onto a C/C composite. It displays superior ablation resistance at temperatures from 2,000–3,000 °C, compared to existing ultra-high temperature ceramics (for example, a rate of material loss over 12 times better than conventional zirconium carbide at 2,500 °C). The carbide is a substitutional solid solution of Zr–Ti containing carbon vacancies that are randomly occupied by boron atoms. The sealing ability of the ceramic’s oxides, slow oxygen diffusion and a dense and gradient distribution of ceramic result in much slower loss of protective oxide layers formed during ablation than other ceramic systems, leading to the superior ablation resistance. PMID:28613275

Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire.

PubMed

Jang, A-Rang; Hong, Seokmo; Hyun, Chohee; Yoon, Seong In; Kim, Gwangwoo; Jeong, Hu Young; Shin, Tae Joo; Park, Sung O; Wong, Kester; Kwak, Sang Kyu; Park, Noejung; Yu, Kwangnam; Choi, Eunjip; Mishchenko, Artem; Withers, Freddie; Novoselov, Kostya S; Lim, Hyunseob; Shin, Hyeon Suk

2016-05-11

Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.

The behaviour of boron in a peraluminous granite-pegmatite system and associated hydrothermal solutions: a melt and fluid-inclusion study

NASA Astrophysics Data System (ADS)

Thomas, Rainer; Förster, Hans-Jürgen; Heinrich, Wilhelm

2002-09-01

Detailed analyses of melt and fluid inclusions combined with an electron-microprobe survey of boron-bearing minerals reveal the evolution of boron in a highly evolved peraluminous granite-pegmatite complex and the associated high- and medium-temperature ore-forming hydrothermal fluids (Ehrenfriedersdorf, Erzgebirge, Germany). Melt inclusions in granite represent embryonic pegmatite-forming melts containing about 10 wt% H2O and 1.8 wt% B2O3. These melts are also enriched in F, P, and other incompatible elements such as Be, Sn, Rb, and Cs. Ongoing differentiation and volatile enrichment drove the system into a solvus, where two pegmatite-forming melts coexisted. The critical point is at about 712 °C, 100 MPa, 20 wt% H2O and 4.1 wt% B2O3. Cooling and concomitant fractional crystallisation from 700 to 500 °C induced development of two conjugate melts, an H2O-poor (A-melt) and an H2O-rich melt (B-melt) along the opening solvus. Boron is a major element in both melts and is preferentially partitioned into the H2O-rich melt. Temperature-dependent distribution coefficients $ D{boron}{{B - melt/A - melt}} $ are 1.3 at 650 °C, 1.5 at 600 °C, and 1.8 at 500 °C. In both melts, boron concentrations decreased during cooling because of exsolution of a boron-rich hypersaline brine throughout the pegmatitic stage. Boromuscovite containing up to 8.5 wt% was another sink for boron at this stage. The end of the melt-dominated pegmatitic stage was attained at a solidus temperature of around 490 °C. Fluid inclusions of the hydrothermal stage reveal trapping temperatures of 480 to 370 °C, along with varying densities and highly variable B2O3 contents ranging from 0.20 to 2.94 wt%. A boiling system evolved, indicating a complex interplay between closed- and open-system behaviour. Pressure switched from lithostatic to hydrostatic and back, generating hydrothermal convection cells where meteoric waters were introduced and mixed with magmatic fluids. Boron-rich solutions originated from magmatic fluids, whereas boron-depleted fluids were mainly of meteoric origin. This highlights the potential of boron for discriminating fluids of different origin. Tin is continuously enriched during the evolution because tin and boron are cross-linked by formation of boron-, fluorine- and tin-fluorine-bearing complexes and is finally deposited within quartz-cassiterite veins during the transition from closed- to open-system behaviour. Boron does not only trace the complex evolution of the Ehrenfriedersdorf complex but exerts, together with H2O, F and P, an important control on the physical and chemical properties of pegmatite-forming melts, and particularly on the formation of a two-melt solvus at low pressure. We discuss this with respect to experimental results on H2O solubility and the critical behaviour of the haplogranite-water system which contained variable concentrations of volatiles.

The behaviour of boron in a peraluminous granite-pegmatite system and associated hydrothermal solutions: a melt and fluid-inclusion study

NASA Astrophysics Data System (ADS)

Thomas, Rainer; Förster, Hans-Jürgen; Heinrich, Wilhelm

Detailed analyses of melt and fluid inclusions combined with an electron-microprobe survey of boron-bearing minerals reveal the evolution of boron in a highly evolved peraluminous granite-pegmatite complex and the associated high- and medium-temperature ore-forming hydrothermal fluids (Ehrenfriedersdorf, Erzgebirge, Germany). Melt inclusions in granite represent embryonic pegmatite-forming melts containing about 10 wt% H2O and 1.8 wt% B2O3. These melts are also enriched in F, P, and other incompatible elements such as Be, Sn, Rb, and Cs. Ongoing differentiation and volatile enrichment drove the system into a solvus, where two pegmatite-forming melts coexisted. The critical point is at about 712 °C, 100 MPa, 20 wt% H2O and 4.1 wt% B2O3. Cooling and concomitant fractional crystallisation from 700 to 500 °C induced development of two conjugate melts, an H2O-poor (A-melt) and an H2O-rich melt (B-melt) along the opening solvus. Boron is a major element in both melts and is preferentially partitioned into the H2O-rich melt. Temperature-dependent distribution coefficients $ D{boron}{{B - melt/A - melt}} $ are 1.3 at 650 °C, 1.5 at 600 °C, and 1.8 at 500 °C. In both melts, boron concentrations decreased during cooling because of exsolution of a boron-rich hypersaline brine throughout the pegmatitic stage. Boromuscovite containing up to 8.5 wt% was another sink for boron at this stage. The end of the melt-dominated pegmatitic stage was attained at a solidus temperature of around 490 °C. Fluid inclusions of the hydrothermal stage reveal trapping temperatures of 480 to 370 °C, along with varying densities and highly variable B2O3 contents ranging from 0.20 to 2.94 wt%. A boiling system evolved, indicating a complex interplay between closed- and open-system behaviour. Pressure switched from lithostatic to hydrostatic and back, generating hydrothermal convection cells where meteoric waters were introduced and mixed with magmatic fluids. Boron-rich solutions originated from magmatic fluids, whereas boron-depleted fluids were mainly of meteoric origin. This highlights the potential of boron for discriminating fluids of different origin. Tin is continuously enriched during the evolution because tin and boron are cross-linked by formation of boron-, fluorine- and tin-fluorine-bearing complexes and is finally deposited within quartz-cassiterite veins during the transition from closed- to open-system behaviour. Boron does not only trace the complex evolution of the Ehrenfriedersdorf complex but exerts, together with H2O, F and P, an important control on the physical and chemical properties of pegmatite-forming melts, and particularly on the formation of a two-melt solvus at low pressure. We discuss this with respect to experimental results on H2O solubility and the critical behaviour of the haplogranite-water system which contained variable concentrations of volatiles.

Thermophoretically driven water droplets on graphene and boron nitride surfaces

NASA Astrophysics Data System (ADS)

Rajegowda, Rakesh; Kannam, Sridhar Kumar; Hartkamp, Remco; Sathian, Sarith P.

2018-05-01

We investigate thermally driven water droplet transport on graphene and hexagonal boron nitride (h-BN) surfaces using molecular dynamics simulations. The two surfaces considered here have different wettabilities with a significant difference in the mode of droplet transport. The water droplet travels along a straighter path on the h-BN sheet than on graphene. The h-BN surface produced a higher driving force on the droplet than the graphene surface. The water droplet is found to move faster on h-BN surface compared to graphene surface. The instantaneous contact angle was monitored as a measure of droplet deformation during thermal transport. The characteristics of the droplet motion on both surfaces is determined through the moment scaling spectrum. The water droplet on h-BN surface showed the attributes of the super-diffusive process, whereas it was sub-diffusive on the graphene surface.

Permeability and channel-mediated transport of boric acid across membrane vesicles isolated from squash roots.

PubMed

Dordas, C; Chrispeels, M J; Brown, P H

2000-11-01

Boron is an essential micronutrient for plant growth and the boron content of plants differs greatly, but the mechanism(s) of its uptake into cells is not known. Boron is present in the soil solution as boric acid and it is in this form that it enters the roots. We determined the boron permeability coefficient of purified plasma membrane vesicles obtained from squash (Cucurbita pepo) roots and found it to be 3 x 10(-7) +/-1.4 x 10(-8) cm s(-1), six times higher than the permeability of microsomal vesicles. Boric acid permeation of the plasma membrane vesicles was partially inhibited (30%-39%) by mercuric chloride and phloretin, a non-specific channel blocker. The inhibition by mercuric chloride was readily reversible by 2-mercaptoethanol. The energy of activation for boron transport into the plasma membrane vesicles was 10.2 kcal mol(-1). Together these data indicate that boron enters plant cells in part by passive diffusion through the lipid bilayer of the plasma membrane and in part through proteinaceous channels. Expression of the major intrinsic protein (MIP) PIP1 in Xenopus laevis oocytes resulted in a 30% increase in the boron permeability of the oocytes. Other MIPs tested (PIP3, MLM1, and GlpF) did not have this effect. We postulate that certain MIPs, like those that have recently been shown to transport small neutral solutes, may also be the channels through which boron enters plant cells.

Permeability and Channel-Mediated Transport of Boric Acid across Membrane Vesicles Isolated from Squash Roots1

PubMed Central

Dordas, Christos; Chrispeels, Maarten J.; Brown, Patrick H.

2000-01-01

Boron is an essential micronutrient for plant growth and the boron content of plants differs greatly, but the mechanism(s) of its uptake into cells is not known. Boron is present in the soil solution as boric acid and it is in this form that it enters the roots. We determined the boron permeability coefficient of purified plasma membrane vesicles obtained from squash (Cucurbita pepo) roots and found it to be 3 × 10−7 ±1.4 × 10−8 cm s−1, six times higher than the permeability of microsomal vesicles. Boric acid permeation of the plasma membrane vesicles was partially inhibited (30%–39%) by mercuric chloride and phloretin, a non-specific channel blocker. The inhibition by mercuric chloride was readily reversible by 2-mercaptoethanol. The energy of activation for boron transport into the plasma membrane vesicles was 10.2 kcal mol−1. Together these data indicate that boron enters plant cells in part by passive diffusion through the lipid bilayer of the plasma membrane and in part through proteinaceous channels. Expression of the major intrinsic protein (MIP) PIP1 in Xenopus laevis oocytes resulted in a 30% increase in the boron permeability of the oocytes. Other MIPs tested (PIP3, MLM1, and GlpF) did not have this effect. We postulate that certain MIPs, like those that have recently been shown to transport small neutral solutes, may also be the channels through which boron enters plant cells. PMID:11080310

Effect of charcoal doping on the superconducting properties of MgB 2 bulk

NASA Astrophysics Data System (ADS)

Kim, N. K.; Tan, K. S.; Jun, B.-H.; Park, H. W.; Joo, J.; Kim, C.-J.

2008-09-01

The effect of charcoal doping on the superconducting properties of in situ processed MgB 2 bulk samples was investigated. To understand the size effect of the dopant the charcoal powder was attrition milled for 1 h, 3 h and 6 h using ZrO 2 balls. The milled charcoal powders were mixed with magnesium and boron powders to a nominal composition of Mg(B 0.975C 0.025) 2. The Mg(B 0.975C 0.025) 2 compacts were heat-treated at 900 °C for 0.5 h in flowing Ar atmosphere. Magnetic susceptibility for the samples showed that the superconducting transition temperature ( Tc) decreased as the size of the charcoal powder decreased. The critical current density ( Jc) of Mg(B 0.975C 0.025) 2 prepared using large size charcoal powder was lower than that of the undoped MgB 2. However, a crossover of Jc value was observed at high magnetic fields of about 4 T in Mg(B 0.975C 0.025) 2 prepared using small size charcoal powder. Carbon diffusion into the boron site was easier and gave the Jc increase effect when the small size charcoal was used as a dopant.

Preparation and photocatalytic activity of nonmetal Co-doped titanium dioxide photocatalyst

NASA Astrophysics Data System (ADS)

Sun, Xiaogang; Xing, Jun; Qiu, Jingping

2016-06-01

A series of boron and sulfur co-doped titanium dioxide (TiO2) photocatalysts were prepared by a sol-gel method using boric acid, thiourea and tetrabutyl titanate [Ti(OC4H9)4] as precursors. The photoabsorbance of as-prepared photocatalysts was measured by UV-Vis diffuse reflectance spectroscopy (DRS), and its microstructure was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and N2 adsorption-desorption measurements. The prepared photocatalysts consisted of the anatase phase mainly in the form of spherical particles. The photocatalytic performance was studied by photodegradation of methyl blue (MB) in water under UV and visible light irradiation. The calcination temperature and the codoping content influenced the photoactivity. The synergistic effect of boron and sulfur co-doping played an important role in improving the photocatalytic activity. In addition, the possibility of cyclic usage of codoped TiO2 was also confirmed, the photocatalytic activity of TiO2 remained above 91% of that of the fresh sample after being used four times. It was shown that the co-doped TiO2 could be activated by visible light and could thus be potentially applied for the treatment of water contaminated by organic pollutants.

Anode performance of boron-doped graphites prepared from shot and sponge cokes

NASA Astrophysics Data System (ADS)

Liu, Tao; Luo, Ruiying; Yoon, Seong-Ho; Mochida, Isao

The structures and anode performances of graphitized pristine and boron-doped shot and sponge cokes have been comparatively studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and galvanostatic measurement. The results show that high degree of graphitization can be obtained by the substituted boron atom in the carbon lattice, and boron in the resultant boron-doped graphites mainly exist in the form of boron carbide and boron substituted in the carbon lattice. Both of boron-doped graphites from shot and sponge cokes obtain discharge capacity of 350 mAh g -1 and coulombic efficiency above 90%. Apart from commonly observed discharge plateau for graphite, boron-doped samples in this study also show a small plateau at ca. 0.06 V. This phenomenon can be explained that Li ion stores in the site to be void-like spaces that are produced by "molecular bridging" between the edge sites of graphene layer stack with a release of boron atoms substituted at the edge of graphene layer. The effect of the amount of boron dopant and graphitization temperature on the anode performance of boron-doped graphite are also investigated in this paper.

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate [Formation Mechanisms of Boron Oxide Fillms Fabricated by Large Area Electron Beam-Induced Deposition of Trimethyl Borate

DOE PAGES

Martin, Aiden A.; Depond, Philip J.

2018-04-24

Boron-containing materials are increasingly drawing interest for the use in electronics, optics, laser targets, neutron absorbers, and high-temperature and chemically resistant ceramics. In this article, the first investigation into the deposition of boron-based material via electron beam-induced deposition (EBID) is reported. Thin films were deposited using a novel, large-area EBID system that is shown to deposit material at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the depositionmore » mechanisms of TMB to the conventional, alkoxide-based precursor tetraethyl orthosilicate it is revealed that ligand chemistry does not precisely predict the pathways leading to deposition of material via EBID. Lastly, the results demonstrate the first boron-containing material deposited by the EBID process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials.« less

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate [Formation Mechanisms of Boron Oxide Fillms Fabricated by Large Area Electron Beam-Induced Deposition of Trimethyl Borate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, Aiden A.; Depond, Philip J.

Boron-containing materials are increasingly drawing interest for the use in electronics, optics, laser targets, neutron absorbers, and high-temperature and chemically resistant ceramics. In this article, the first investigation into the deposition of boron-based material via electron beam-induced deposition (EBID) is reported. Thin films were deposited using a novel, large-area EBID system that is shown to deposit material at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the depositionmore » mechanisms of TMB to the conventional, alkoxide-based precursor tetraethyl orthosilicate it is revealed that ligand chemistry does not precisely predict the pathways leading to deposition of material via EBID. Lastly, the results demonstrate the first boron-containing material deposited by the EBID process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials.« less

Depth profiling of hydrogen passivation of boron in Si(100)

NASA Astrophysics Data System (ADS)

Huang, L. J.; Lau, W. M.; Simpson, P. J.; Schultz, P. J.

1992-08-01

The properties of SiO2/p-Si were studied using variable-energy positron-annihilation spectroscopy and Raman spectroscopy. The oxide film was formed by ozone oxidation in the presence of ultraviolet radiation at room temperature. Both the positron-annihilation and Raman analyses show that chemical cleaning of boron-doped p-type Si(100) using concentrated hydrofluoric acid prior to the oxide formation leads to hydrogen incorporation in the semiconductor. The incorporated hydrogen passivates the boron dopant by forming a B-H complex, the presence of which increases the broadening of the line shape in the positron-annihilation analysis, and narrows the linewidth of the Raman peak. Annealing of the SiO2/Si sample at a moderate temperature of 220 °C in vacuum was found sufficient to dissociate the complex and reactivate the boron dopant.

The use of metalorganics in the preparation of semiconductor materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manasevit, H.M.; Hewitt, W.B.; Nelson, A.J.

1989-10-01

The authors describe boron-arsenic and boron-phosphorus films grown on Si, sapphire, and silicon-on-sapphire (SOS) by pyrolyzing Group III alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB) in the presence of AsH/sub 3/ and PH/sub 3/, respectively, in a H/sub 2/ atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. The films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH/sub 3/ were pyrolyzed over the temperature range of 550{sup 0}-900{sup 0}C. The filmsmore » were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 {mu}m) B-P and thick (5 {mu}m) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH/sub 3/ and TMB showed a higher carbon content than those grown from AsH/sub 3/ and TMB. Based on their B/As and B/P ratios, films with nominal compositions B/sub 12-16/As/sub 2/P and B/sub 1.1-1.3/P were grown using TMB as the boron source.« less

Boron isotope fractionation in liquid chromatography with boron-specific resins as column packing material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oi, Takao; Shimazaki, Hiromi; Ishii, Reiko

1997-07-01

Boron-specific resins with n-methyl glucamine as the functional group were used as column packing material of liquid chromatography for boron isotope separation. The shapes of chromatograms in reverse breakthrough experiments were heavily dependent on the pH of the eluents, and there existed a pH value at which a chromatogram of the displacement type was realized nearly ideally. The value of the single-stage separation factor for the boron isotopes varied between 1.010 and 1.022, depending on the temperature and the form of the resins. The existence of the three-coordinate boron species in addition to the four-coordinate species in the resin phasemore » is suggested.« less

Growth of single-layer boron nitride dome-shaped nanostructures catalysed by iron clusters.

PubMed

Torre, A La; Åhlgren, E H; Fay, M W; Ben Romdhane, F; Skowron, S T; Parmenter, C; Davies, A J; Jouhannaud, J; Pourroy, G; Khlobystov, A N; Brown, P D; Besley, E; Banhart, F

2016-08-11

We report on the growth and formation of single-layer boron nitride dome-shaped nanostructures mediated by small iron clusters located on flakes of hexagonal boron nitride. The nanostructures were synthesized in situ at high temperature inside a transmission electron microscope while the e-beam was blanked. The formation process, typically originating at defective step-edges on the boron nitride support, was investigated using a combination of transmission electron microscopy, electron energy loss spectroscopy and computational modelling. Computational modelling showed that the domes exhibit a nanotube-like structure with flat circular caps and that their stability was comparable to that of a single boron nitride layer.

Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

NASA Technical Reports Server (NTRS)

Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

1989-01-01

Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

Integrated Protection Against Lyctid Beetle Infestations Part II. - Laboratory Dip-Diffusion Treatment of Unseasoned Banak (Virola spp.) Lumber with Boron Compounds

Treesearch

Lonnie H. Williams; Joe K. Mauldin

1985-01-01

A manufacturer of conventional moulding wanted a method that would prevent lyctid beetle damage to banak (Virola spp.) wood throughout the period from initial cutting in Brazil until final mouldings were in use. Because complete penetration of wood may be obtained, unseasoned banak wood was treated by dip-diffusion with disodium octaborate...

Progress research of non-Cz silicon material

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1983-01-01

The simultaneous diffusion of liquid boron and liquid phosphorus dopants into N-type dendritic silicon web for solar cells was investigated. It is planned that the diffusion parameters required to achieve the desired P(+)NN(+) cell structure be determined and the resultant cell properties be compared to cells produced in a sequential differential process. A cost analysis of the simultaneous junction formation process is proposed.

Compatibility of refractory materials for nuclear reactor poison control systems

NASA Technical Reports Server (NTRS)

Sinclair, J. H.

1974-01-01

Metal-clad poison rods have been considered for the control system of an advanced space power reactor concept studied at the NASA Lewis Research Center. Such control rods may be required to operate at temperatures of about 140O C. Selected poison materials (including boron carbide and the diborides of zirconium, hafnium, and tantalum) were subjected to 1000-hour screening tests in contact with candidate refractory metal cladding materials (including tungsten and alloys of tantalum, niobium, and molybdenum) to assess the compatibility of these materials combinations at the temperatures of interest. Zirconium and hafnium diborides were compatible with refractory metals at 1400 C, but boron carbide and tantalum diboride reacted with the refractory metals at this temperature. Zirconium diboride also showed promise as a reaction barrier between boron carbide and tungsten.

Method and device to synthesize boron nitride nanotubes and related nanoparticles

DOEpatents

Zettl, Alexander K.

2016-07-19

Methods and apparatus for producing chemical nanostructures having multiple elements, such as boron and nitride, e.g. boron nitride nanotubes, are disclosed. The method comprises creating a plasma jet, or plume, such as by an arc discharge. The plasma plume is elongated and has a temperature gradient along its length. It extends along its length into a port connector area having ports for introduction of feed materials. The feed materials include the multiple elements, which are introduced separately as fluids or powders at multiple ports along the length of the plasma plume, said ports entering the plasma plume at different temperatures. The method further comprises modifying a temperature at a distal portion of or immediately downstream of said plasma plume; and collecting said chemical nanostructures after said modifying.

Boron modified molybdenum silicide and products

DOEpatents

Meyer, M.K.; Akinc, M.

1999-02-02

A boron-modified molybdenum silicide material is disclosed having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo{sub 5}Si{sub 3} phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi{sub 2} heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo{sub 5}Si{sub 3} for structural integrity. 7 figs.

Boron modified molybdenum silicide and products

DOEpatents

Meyer, Mitchell K.; Akinc, Mufit

1999-02-02

A boron-modified molybdenum silicide material having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo.sub.5 Si.sub.3 phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi.sub.2 heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo.sub.5 Si.sub.3 for structural integrity.

Effects of the substitution of gallium with boron on the physical and mechanical properties of Ni-Mn-Ga shape memory alloys

NASA Astrophysics Data System (ADS)

Aydogdu, Yildirim; Turabi, Ali Sadi; Kok, Mediha; Aydogdu, Ayse; Tobe, Hirobumi; Karaca, Haluk Ersin

2014-12-01

The effects of the substitution of gallium with boron on the physical, mechanical and magnetic shape memory properties of Ni51Mn28.5Ga20.5- xBx (at.%) ( x = 0, 1, 2, 3) polycrystalline alloys are investigated. It has been found that transformation temperatures are decreasing while hardness is increasing with boron addition. B-doping of NiMnGa alloys results in the formation of a second phase that increases its ductility and strength in compression. Moreover, saturation magnetization of austenite is decreasing, while Curie temperature of austenite is increasing with B-doping.

Materials for high-temperature thermoelectric conversion

NASA Technical Reports Server (NTRS)

Feigelson, R. S.; Elwell, D.

1983-01-01

High boron materials of high efficiency for thermoelectric power generation and capable of prolonged operation at temperatures over 1200 C are discussed. Background theoretical studies indicated that the low carrier mobility of materials with beta boron and related structures is probably associated with the high density of traps. Experimental work was mainly concerned with silicon borides in view of promising data from European laboratories. A systematic study using structure determination and lattice constant measurements failed to confirm the existence of an SiBn phase. Only SiB6 and a solid solution of silicon in beta boron with a maximum solid solubility of 5.5-6 at % at 1650 C were found.

Experimental Evaluation of pH and Temperature Effects on the Adsorption of Boron onto Clay Minerals

NASA Astrophysics Data System (ADS)

Hoenisch, B.; Marone, D.; Ruprecht, J.

2017-12-01

Modeling the secular evolution of the concentration [B] and isotopic composition (δ11B) of boron in seawater is hampered by limited constraints on the relative sources (i.e. riverine input of weathering products, hydrothermal convection at mid-ocean ridges and fluids expelled from accretionary prisms) and sinks (i.e. alteration of the oceanic crust, adsorption onto clays, and co-precipitation in carbonates) of boron to and from the ocean. Clays remove approximately 28% of total boron from the ocean and quantification of this sink thus represents a major factor for reconstructing the secular evolution of seawater [B] and δ11B over the Cenozoic. However, the relative strength of the clay sink could have been much smaller in the early Cenozoic compared to today, because borate ion as the charged species is preferentially adsorbed onto detrital clays over boric acid, and because the relative abundance of borate in seawater should have been lower under the more acidic conditions of the early Cenozoic. In addition, different clay minerals tend to fractionate boron isotopes differentially, and the relative composition of clay minerals has varied in the past with the dominant climate and weathering patterns on the continents. We have conducted a range of pH (7.5-8.4) and temperature (3-32°C) experiments with four clay minerals (Kaolinite, Illite, Montmorillonite and Chlorite), to build on previously published but limited experimental data. Similar to a previous study and as expected based on the relative abundance of borate ion in seawater, boron adsorption onto these clays increases at higher pH and lower temperatures, but whereas Montmorillonite and Illite absorb similar quantities of boron, Kaolinite is most and Chlorite least efficient in this process. We are now in the process of characterizing the boron isotope fractionation associated with these adsorption experiments.

A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

NASA Astrophysics Data System (ADS)

Shiota, Koki; Kai, Kazuho; Nagaoka, Shiro; Tsuji, Takuto; Wakahara, Akihiro; Rusop, Mohamad

2016-07-01

The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

Wettability of Pyrolytic Boron Nitride by Aluminum

NASA Technical Reports Server (NTRS)

Chiaramonte, Francis P.; Rosenthal, Bruce N.

1991-01-01

The wetting of pyrolytic boron nitride by molten 99.9999 percent pure aluminum was investigated by using the sessile drop method in a vacuum operating at approximately 660 micro-Pa at temperatures ranging from 700 to 1000 C. The equilibrium contact angle decreased with an increase in temperature. For temperatures at 900 C or less, the equilibrium contact angle was greater than 90 deg. At 1000 C a nonwetting-to-wetting transition occurred and the contact angle stabilized at 49 deg.

Morphological transformations of BNCO nanomaterials: Role of intermediates

NASA Astrophysics Data System (ADS)

Wang, B. B.; Qu, X. L.; Zhu, M. K.; Levchenko, I.; Baranov, O.; Zhong, X. X.; Xu, S.; Ostrikov, K.

2018-06-01

Highly controllable structural transformation of various doped carbon and boron nitride nanomaterials have been achieved with the perspective of their application in microelectronics, optoelectronics, energy devices and catalytic reactions. Specifically, the syntheses of one-dimensional (1D) boron and nitrogen co-doped tube-like carbon nanorods and 2D vertical carbon and oxygen co-doped boron nitride nanosheets on silicon coated with gold films in N2-H2 plasma was demonstrated. During the synthesis of nanomaterials, boron carbide was used as carbon and boron sources. The results of characterizations by scanning and transmission electron microscopes, as well as micro-Raman and X-ray photoelectron spectroscopes indicate that the formation of different nanomaterials relates to the growth temperature and quantity of boron carbide. Specifically, 1D tube-like carbon nanorods doped with boron and nitrogen are formed at ∼910 °C using a small quantity of boron carbide, while 2D vertical boron nitride nanosheets doped with carbon and oxygen are grown at ∼870 °C using a large quantity of boron carbide. These studies indicate that the behaviors of a reactive intermediate product B2O3 on surfaces of Au nanoparticles play an important role in the formation of different nanomaterials, i.e., whether the B2O3 molecules deposited on Au nanoparticles are desorbed mainly determines the formation of different nanomaterials. The formation of 2D vertical carbon and oxygen co-doped boron nitride nanosheets is related to the high growth rate of edges of nanosheets. Furthermore, the photoluminescence (PL) properties of 1D boron and nitrogen co-doped tube-like carbon nanorods and 2D vertical carbon and oxygen co-doped boron nitride nanosheets were studied at room temperature. The PL results show that all the nanomaterials generate the ultraviolet, blue, green and red PL bands, but the 2D vertical carbon and oxygen co-doped boron nitride nanosheets emit more and stronger PL bands than the 1D boron and nitrogen co-doped tube-like carbon nanorods. The significant differences in the PL properties can be attributed to different carbon structures in these nanomaterials. These achievements can be used to synthesize and control the structures of nanomaterials and contribute to the development of the next generation optoelectronic nanodevices based on 1D and 2D nanomaterials.

Low Temperature Fluorination of Aerosol Suspensions of Hydrocarbons Utilizing Elemental Fluorine.

DTIC Science & Technology

1982-09-01

admitting boron trifluoride into the aerosol direct florination of neopentane. The aerosol direct fluorination of ketones indicates the carbonyl group...fluorination of molecules with primary, secondary and tertiary hydro- gens is also included as is the effect of admitting boron trifluoride into the...significantly different physical and chemical properties than either of their components. For example, both ammonia and boron trifluoride are low

Damage coefficients in low resistivity silicon. [solar cells

NASA Technical Reports Server (NTRS)

Srour, J. R.; Othmer, S.; Chiu, K. Y.; Curtis, O. L., Jr.

1975-01-01

Electron and proton damage coefficients are determined for low resistivity silicon based on minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. Irradiations were performed on bulk samples and cells fabricated from four types of boron-doped 0.1 ohm-cm silicon ingots, including the four possible combinations of high and low oxygen content and high and low dislocation density. Measurements were also made on higher resistivity boron-doped bulk samples and solar cells. Major observations and conclusions from the investigation are discussed.

Bridgman Growth of GeSi Alloys in a Static Magnetic Field

NASA Technical Reports Server (NTRS)

Volz, M. P.; Szofran, F. R.; Vujisic, L.; Motakef, S.

1998-01-01

Ge(0.95)Si(0.050 alloy crystals have been grown by the vertical Bridgman technique, both with and without an axial 5 Tesla magnetic field. The crystals were processed in a constant axial thermal gradient and the effects of graphite, hot pressed boron nitride, and pyrolitic boron nitride ampoule materials on interface shapes and macrosegregation profiles were investigated. The sample grown in a graphite ampoule at 5 Tesla exhibited a macroscopic axial concentration profile close to that of complete mixing and strong striation patterns. In samples grown in boron nitride ampoules, both with and without a 5 Tesla magnetic field applied, measured macroscopic axial concentration profiles were intermediate between those expected for a completely mixed melt and diffusion-controlled growth, and striation patterns were also observed. Possible explanations for the apparent inability of the magnetic field to reduce the flow velocities to below the growth velocities are discussed, and results of growth experiments in pyrolitic boron nitride ampoules are also described.

Enhancing boron rejection in FO using alkaline draw solutions.

PubMed

Wang, Yi-Ning; Li, Weiyi; Wang, Rong; Tang, Chuyang Y

2017-07-01

This study provides a novel method to enhance boron removal in a forward osmosis (FO) process. It utilizes the reverse solute diffusion (RSD) of ions from alkaline draw solutions (DSs) and the concentration polarization of the hydroxyl ions to create a highly alkaline environment near the membrane active surface. The results show that boron rejection can be significantly enhanced by increasing the pH of NaCl DS to 12.5 in the active-layer-facing-feed-solution (AL-FS) orientation. The effect of RSD enhanced boron rejection was further promoted in the presence of concentration polarization (e.g., in the active-layer-facing-draw-solution (AL-DS) orientation). The current study opens a new dimension for controlling contaminant removal by FO using tailored DS chemistry, where the RSD-induced localized water chemistry change is taken advantage in contrast to the conventional method of chemical dosing to the bulk feed water. Copyright © 2017 Elsevier Ltd. All rights reserved.

Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

NASA Technical Reports Server (NTRS)

Ho, C.-T.

1982-01-01

The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

Thermophoretically driven water droplets on graphene and boron nitride surfaces.

PubMed

Rajegowda, Rakesh; Kannam, Sridhar Kumar; Hartkamp, Remco; Sathian, Sarith P

2018-05-25

We investigate thermally driven water droplet transport on graphene and hexagonal boron nitride (h-BN) surfaces using molecular dynamics simulations. The two surfaces considered here have different wettabilities with a significant difference in the mode of droplet transport. The water droplet travels along a straighter path on the h-BN sheet than on graphene. The h-BN surface produced a higher driving force on the droplet than the graphene surface. The water droplet is found to move faster on h-BN surface compared to graphene surface. The instantaneous contact angle was monitored as a measure of droplet deformation during thermal transport. The characteristics of the droplet motion on both surfaces is determined through the moment scaling spectrum. The water droplet on h-BN surface showed the attributes of the super-diffusive process, whereas it was sub-diffusive on the graphene surface.

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate

PubMed Central

Depond, Philip J

2018-01-01

Boron-containing materials are increasingly drawing interest for the use in electronics, optics, laser targets, neutron absorbers, and high-temperature and chemically resistant ceramics. In this article, the first investigation into the deposition of boron-based material via electron beam-induced deposition (EBID) is reported. Thin films were deposited using a novel, large-area EBID system that is shown to deposit material at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the deposition mechanisms of TMB to the conventional, alkoxide-based precursor tetraethyl orthosilicate it is revealed that ligand chemistry does not precisely predict the pathways leading to deposition of material via EBID. The results demonstrate the first boron-containing material deposited by the EBID process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials. PMID:29765806

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate.

PubMed

Martin, Aiden A; Depond, Philip J

2018-01-01

Boron-containing materials are increasingly drawing interest for the use in electronics, optics, laser targets, neutron absorbers, and high-temperature and chemically resistant ceramics. In this article, the first investigation into the deposition of boron-based material via electron beam-induced deposition (EBID) is reported. Thin films were deposited using a novel, large-area EBID system that is shown to deposit material at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the deposition mechanisms of TMB to the conventional, alkoxide-based precursor tetraethyl orthosilicate it is revealed that ligand chemistry does not precisely predict the pathways leading to deposition of material via EBID. The results demonstrate the first boron-containing material deposited by the EBID process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials.

Analysis of boron dilution in a four-loop PWR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, J.G.; Sha, W.T.

1995-12-31

Thermal mixing and boron dilution in a pressurized water reactor were analyzed with COMMIX codes. The reactor system was the four loop Zion reactor. Two boron dilution scenarios were analyzed. In the first scenario, the plant is in cold shutdown and the reactor coolant system has just been filled after maintenance on the steam generators. To flush the air out of the steam generator tubes, a reactor coolant pump (RCP) is started, with the water in the pump suction line devoid of boron and at the same temperature as the coolant in the system. In the second scenario, the plantmore » is at hot standby and the reactor coolant system has been heated up to operating temperature after a long outage. It is assumed that an RCP is started, with the pump suction line filled with cold unborated water, forcing a slug of diluted coolant down the downcomer and subsequently through the reactor core. The subsequent transient thermal mixing and boron dilution that would occur in the reactor system is simulated for these two scenarios. The reactivity insertion rate and the total reactivity are evaluated.« less

Superconductivity in diamond.

PubMed

Ekimov, E A; Sidorov, V A; Bauer, E D; Mel'nik, N N; Curro, N J; Thompson, J D; Stishov, S M

2004-04-01

Diamond is an electrical insulator well known for its exceptional hardness. It also conducts heat even more effectively than copper, and can withstand very high electric fields. With these physical properties, diamond is attractive for electronic applications, particularly when charge carriers are introduced (by chemical doping) into the system. Boron has one less electron than carbon and, because of its small atomic radius, boron is relatively easily incorporated into diamond; as boron acts as a charge acceptor, the resulting diamond is effectively hole-doped. Here we report the discovery of superconductivity in boron-doped diamond synthesized at high pressure (nearly 100,000 atmospheres) and temperature (2,500-2,800 K). Electrical resistivity, magnetic susceptibility, specific heat and field-dependent resistance measurements show that boron-doped diamond is a bulk, type-II superconductor below the superconducting transition temperature T(c) approximately 4 K; superconductivity survives in a magnetic field up to Hc2(0) > or = 3.5 T. The discovery of superconductivity in diamond-structured carbon suggests that Si and Ge, which also form in the diamond structure, may similarly exhibit superconductivity under the appropriate conditions.

The elevated temperature mechanical properties of silicon nitride/boron nitride fibrous monoliths

NASA Astrophysics Data System (ADS)

Trice, Rodney Wayne

A unique, all-ceramic material capable of non-brittle fracture via crack deflection has been characterized from 25sp°C through 1400sp°C. This material, called fibrous monoliths (FMs), was comprised of unidirectionally aligned 250 mum diameter cells of silicon nitride surrounded by 10 mum thick cell boundaries of boron nitride. Six weight percent yttria and two weight percent alumina were added to the silicon nitride to aid in densification. TEM experiments revealed that the sintering aids used to densify the silicon nitride cells were migrating into the boron nitride cell boundary during hot-pressing and that a fine network of micro-cracks existed between basal planes of boron nitride. Elevated temperature four point bending tests were performed on fibrous monolith ceramics from room temperature through 1400sp°C. Peak strengths of FMs averaged 510 MPa for specimens tested at room temperature through 176 MPa at 1400sp°C. Work of fractures ranged from 7300 J/msp2 to 3200 J/msp2 under the same temperature conditions. The interfacial fracture energy of boron nitride, GammasbBN, as a function of temperature has been determined using the Charalambides method. The fracture energy of boron nitride is approximately 40 J/msp2 and remained constant from 25sp°C through 950sp°C. A sharp increase in GammasbBN, to about 60 J/msp2, was observed at 1000sp°C-1050sp°C. This increase in GammasbBN was attributed to interactions of the crack tip with the cell boundary glassy phase. Subsequent measurements at 1075sp°C indicated a marked decrease in GammasbBN to near 40 J/msp2 before plateauing at 17-20 J/msp2 in the 1200sp°C-1300sp°C regime. The Mode I fracture toughness of silicon nitride was also determined using the single edge precracked beam method as a function of temperature. The He and Hutchinson model relating crack deflection at an interface to the Dundurs' parameter was applied to the current data set using the temperature dependent fracture energies of the boron nitride and the silicon nitride. A more refractory fibrous monolith was fabricated in an effort to extend the high temperature properties of SN/BN fibrous monoliths. Only 4 wt.% yttria was added to the silicon nitride to aid in densification. The presence of residual carbon following binder burnout was proposed to be responsible for the formation of melilite, a phase known to undergo severe oxidation between 900sp°C-1100sp°C. When residual carbon was removed prior to hot-pressing with a post-binder burnout heat treatment at 400sp°C in air this phase was not present. A room temperature strength of 553 MPa and a work of fracture of 6700 J/msp2 was observed. A strength of 293 MPa was measured at 1400sp°C.

Method for enhancing the solubility of boron and indium in silicon

DOEpatents

Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

2002-01-01

A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

Shear-Assisted Production of Few-Layer Boron Nitride Nanosheets by Supercritical CO2 Exfoliation and Its Use for Thermally Conductive Epoxy Composites.

PubMed

Tian, Xiaojuan; Li, Yun; Chen, Zhuo; Li, Qi; Hou, Liqiang; Wu, Jiaye; Tang, Yushu; Li, Yongfeng

2017-12-19

Boron nitride nanosheets (BNNS) hold the similar two-dimensional structure as graphene and unique properties complementary to graphene, which makes it attractive in application ranging from electronics to energy storage. The exfoliation of boron nitride (BN) still remains challenge and hinders the applications of BNNS. In this work, the preparation of BNNS has been realized by a shear-assisted supercritical CO 2 exfoliation process, during which supercritical CO 2 intercalates and diffuses between boron nitride layers, and then the exfoliation of BN layers is obtained in the rapid depressurization process by overcoming the van der Waals forces. Our results indicate that the bulk boron nitride has been successfully exfoliated into thin nanosheets with an average 6 layers. It is found that the produced BNNS is well-dispersed in isopropyl alcohol (IPA) with a higher extinction coefficient compared with the bulk BN. Moreover, the BNNS/epoxy composite used as thermal interface materials has been prepared. The introduction of BNNS results in a 313% enhancement in thermal conductivity. Our results demonstrate that BNNS produced by supercritical CO 2 exfoliation show great potential applications for heat dissipation of high efficiency electronics.

Stable synthesis of few-layered boron nitride nanotubes by anodic arc discharge

DOE PAGES

Yeh, Yao-Wen; Raitses, Yevgeny; Koel, Bruce E.; ...

2017-06-08

Boron nitride nanotubes (BNNTs) were successfully synthesized by a dc arc discharge using a boron-rich anode as synthesis feedstock in a nitrogen gas environment at near atmospheric pressure. The synthesis was achieved independent of the cathode material suggesting that under such conditions the arc operates in so-called anodic mode with the anode material being consumed by evaporation due to the arc heating. In order to sustain the arc current by thermionic electron emission, the cathode has to be at sufficiently high temperature, which for a typical arc current density of similar to 100 A/cm 2, is above the boron meltingmore » point (2350 K). With both electrodes made from the same boron-rich alloy, we found that the arc operation unstable due to frequent sticking between two molten electrodes and formation of molten droplets. We achieved a stable and reliable arc operation and arc synthesis with the boronrich anode and the cathode made from a refractory metal which has a melting temperature above the melting point of boron. Ex-situ characterization of synthesized BNNTs with electron microscopy and Raman spectroscopy revealed that independent of the cathode material, the tubes are primarily single and double walled. Our results also show evidence of root-growth of BNNTs produced in the arc discharge.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crabtree, D.J.

Three types of boron/epoxy prepreg tape were prestressed to fracture weak sites along the fiber by winding over 0.3- to 0.6-inch diameter rollers prior to lamination. The prestressed prepreg was then laminated, and design allowable testing was conducted to determine if mechanical strength properties are increased and data scatter is reduced by prestressing. The types of prepreg studied were standard 'Rigidite' 5505/4 prepreg, carbon substrate boron fiber prepreg, and a prepreg made from 'defect' tungsten substrate boron that was manufactured in a high-speed, low-cost, production process. The strength of angleply composites of both 'Rigidite' 5505/4 and carbon substrate boron compositesmore » were unaffected by prestressing. A study was made to determine if prepreg costs could be reduced by manufacturing low-cost 'defect' boron fiber and prestressing it to improve its properties. The results of this study were inconclusive. The test results show prestressing marginally improved some composite properties while others were reduced. On 'Rigidite' 5505/4 unidirectional composites, fatigue strength was significantly improved by prestressing, while longitudinal tensile strength was reduced at room temperature and 350 F. On unidirectional carbon substrate boron composites, the longitudinal tensile strength at room temperature and 350F was increased with attendant variability, while fatigue strength at high stress levels was reduced but not affected at low stress levels.« less

Stable synthesis of few-layered boron nitride nanotubes by anodic arc discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeh, Yao-Wen; Raitses, Yevgeny; Koel, Bruce E.

Boron nitride nanotubes (BNNTs) were successfully synthesized by a dc arc discharge using a boron-rich anode as synthesis feedstock in a nitrogen gas environment at near atmospheric pressure. The synthesis was achieved independent of the cathode material suggesting that under such conditions the arc operates in so-called anodic mode with the anode material being consumed by evaporation due to the arc heating. In order to sustain the arc current by thermionic electron emission, the cathode has to be at sufficiently high temperature, which for a typical arc current density of similar to 100 A/cm 2, is above the boron meltingmore » point (2350 K). With both electrodes made from the same boron-rich alloy, we found that the arc operation unstable due to frequent sticking between two molten electrodes and formation of molten droplets. We achieved a stable and reliable arc operation and arc synthesis with the boronrich anode and the cathode made from a refractory metal which has a melting temperature above the melting point of boron. Ex-situ characterization of synthesized BNNTs with electron microscopy and Raman spectroscopy revealed that independent of the cathode material, the tubes are primarily single and double walled. Our results also show evidence of root-growth of BNNTs produced in the arc discharge.« less

Significantly enhanced critical current density in nano-MgB2 grains rapidly formed at low temperature with homogeneous carbon doping

NASA Astrophysics Data System (ADS)

Liu, Yongchang; Lan, Feng; Ma, Zongqing; Chen, Ning; Li, Huijun; Barua, Shaon; Patel, Dipak; Shahriar, M.; Hossain, Al; Acar, S.; Kim, Jung Ho; Xue Dou, Shi

2015-05-01

High performance MgB2 bulks using carbon-coated amorphous boron as a boron precursor were fabricated by Cu-activated sintering at low temperature (600 °C, below the Mg melting point). Dense nano-MgB2 grains with a high level of homogeneous carbon doping were formed in these MgB2 samples. This type of microstructure can provide a stronger flux pinning force, together with depressed volatility and oxidation of Mg owing to the low-temperature Cu-activated sintering, leading to a significant improvement of critical current density (Jc) in the as-prepared samples. In particular, the value of Jc for the carbon-coated (Mg1.1B2)Cu0.05 sample prepared here is even above 1 × 105 A cm-2 at 20 K, 2 T. The results herein suggest that the combination of low-temperature Cu-activated sintering and employment of carbon-coated amorphous boron as a precursor could be a promising technique for the industrial production of practical MgB2 bulks or wires with excellent Jc, as the carbon-coated amorphous boron powder can be produced commercially at low cost, while the addition of Cu is very convenient and inexpensive.

Phase degradation in BxGa1-xN films grown at low temperature by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Gunning, Brendan P.; Moseley, Michael W.; Koleske, Daniel D.; Allerman, Andrew A.; Lee, Stephen R.

2017-04-01

Using metalorganic vapor phase epitaxy, a comprehensive study of BxGa1-xN growth on GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure results in rough surfaces and poor boron incorporation efficiency, while growth at low-temperature and low-pressure (750-900 °C and 20 Torr) using nitrogen carrier gas results in improved surface morphology and boron incorporation up to 7.4% as determined by nuclear reaction analysis. However, further structural analysis by transmission electron microscopy and x-ray pole figures points to severe degradation of the high boron composition films, into a twinned cubic structure with a high density of stacking faults and little or no room temperature photoluminescence emission. Films with <1% triethylboron (TEB) flow show more intense, narrower x-ray diffraction peaks, near-band-edge photoluminescence emission at 362 nm, and primarily wurtzite-phase structure in the x-ray pole figures. For films with >1% TEB flow, the crystal structure becomes dominated by the cubic phase. Only when the TEB flow is zero (pure GaN), does the cubic phase entirely disappear from the x-ray pole figure, suggesting that under these growth conditions even very low boron compositions lead to mixed crystalline phases.

Molecular-Level Processing of Si-(B)-C Materials with Tailored Nano/Microstructures.

PubMed

Schmidt, Marion; Durif, Charlotte; Acosta, Emanoelle Diz; Salameh, Chrystelle; Plaisantin, Hervé; Miele, Philippe; Backov, Rénal; Machado, Ricardo; Gervais, Christel; Alauzun, Johan G; Chollon, Georges; Bernard, Samuel

2017-12-01

The design of Si-(B)-C materials is investigated, with detailed insight into the precursor chemistry and processing, the precursor-to-ceramic transformation, and the ceramic microstructural evolution at high temperatures. In the early stage of the process, the reaction between allylhydridopolycarbosilane (AHPCS) and borane dimethyl sulfide is achieved. This is investigated in detail through solid-state NMR and FTIR spectroscopy and elemental analyses for Si/B ratios ranging from 200 to 30. Boron-based bridges linking AHPCS monomeric fragments act as crosslinking units, extending the processability range of AHPCS and suppressing the distillation of oligomeric fragments during the low-temperature pyrolysis regime. Polymers with low boron contents display appropriate requirements for facile processing in solution, leading to the design of monoliths with hierarchical porosity, significant pore volume, and high specific surface area after pyrolysis. Polymers with high boron contents are more appropriate for the preparation of dense ceramics through direct solid shaping and pyrolysis. We provide a comprehensive study of the thermal decomposition mechanisms, and a subsequent detailed study of the high-temperature behavior of the ceramics produced at 1000 °C. The nanostructure and microstructure of the final SiC-based ceramics are intimately linked to the boron content of the polymers. B 4 C/C/SiC nanocomposites can be obtained from the polymer with the highest boron content. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Creep Strength Behavior of Boron Added P91 Steel and its Weld in the Temperature Range of 600-650°C

NASA Astrophysics Data System (ADS)

Swaminathan, J.; Das, C. R.; Baral, Jayashree; Phaniraj, C.; Ghosh, R. N.; Albert, S. K.; Bhaduri, A. K.

One of the promising ways for mitigation of Type IV cracking — a failure by cracking at the intercritical /fine grained heat affected zone, a life limiting problem in advanced 9-12 Cr ferritic steel weld like that of P91 is through modification of alloy composition by addition of boron. Addition of boron was observed to improve the microstructure at the weld zone and hence the creep strength. In the present work, boron (100 ppm with controlled nitrogen) added P91 steel after normalizing at 1050°C and 1150°C and tempered at 760°C were studied for the creep behavior in the base metal and welded condition in the temperature range of 600-650°C. Creep strength was characterized in terms of stress and temperature dependence of creep rate and rupture time. Weld creep life was reduced compared to the base metal with rupture occurring at the ICHAZ (Type IV crack). However at longer time (at lower stress levels) exposure creep crack moves from weld metal to HAZ (Type II crack). Rupture life was found to superior for the base and weld in the boron containing steel when higher normalizing temperature is used. Estimation of 105 h was attempted based on short term rupture data available and weld strength factors were calculated. Observed values are better for P91BH condition than the values for P91BLcondition as well as those available for P91 in open literature

Effect of Boron and Titanium Addition on the Hot Ductility of Low-Carbon Nb-Containing Steel

NASA Astrophysics Data System (ADS)

Liu, Wei-Jian; Li, Jing; Shi, Cheng-Bin; Huo, Xiang-Dong

2015-12-01

The effect of boron and titanium addition on the hot ductility of Nb-containing steel was investigated using hot tensile tests. The fracture surface and the quenched longitudinal microstructure were examined by optical microscopy (OM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results showed that both steel samples had the similar change from 1,100°C to 700°C. The hot ductility of Nb-containing steel with boron and titanium addition was higher than the steel without boron and titanium in the temperature range of 900-750°C. Because the formation of intergranular ferrite was inhibited by solute boron segregating on the grain boundary, the formation of TiN changed the distribution of Nb- and boron-containing precipitates and improved the amount of intragranular ferrite.

Priority compositions of boron carbide crystals obtained by self-propagating high-temperature synthesis

NASA Astrophysics Data System (ADS)

Ponomarev, V. I.; Konovalikhin, S. V.; Kovalev, I. D.; Vershinnikov, V. I.

2015-09-01

Splitting of reflections from boron carbide has been found for the first time by an X-ray diffraction study of polycrystalline mixture of boron carbide В15- х С х , (1.5 ≤ x ≤ 3) and its magnesium derivative C4B25Mg1.42. An analysis of reflection profiles shows that this splitting is due to the presence of boron carbide phases of different compositions in the sample, which are formed during crystal growth. The composition changes from В12.9С2.1 to В12.4С2.6.

Single photon emitters in boron nitride: More than a supplementary material

NASA Astrophysics Data System (ADS)

Koperski, M.; Nogajewski, K.; Potemski, M.

2018-03-01

We present comprehensive optical studies of recently discovered single photon sources in boron nitride, which appear in form of narrow lines emitting centres. Here, we aim to compactly characterise their basic optical properties, including the demonstration of several novel findings, in order to inspire discussion about their origin and utility. Initial inspection reveals the presence of narrow emission lines in boron nitride powder and exfoliated flakes of hexagonal boron nitride deposited on Si/SiO2 substrates. Generally rather stable, the boron nitride emitters constitute a good quality visible light source. However, as briefly discussed, certain specimens reveal a peculiar type of blinking effects, which are likely related to existence of meta-stable electronic states. More advanced characterisation of representative stable emitting centres uncovers a strong dependence of the emission intensity on the energy and polarisation of excitation. On this basis, we speculate that rather strict excitation selectivity is an important factor determining the character of the emission spectra, which allows the observation of single and well-isolated emitters. Finally, we investigate the properties of the emitting centres in varying external conditions. Quite surprisingly, it is found that the application of a magnetic field introduces no change in the emission spectra of boron nitride emitters. Further analysis of the impact of temperature on the emission spectra and the features seen in second-order correlation functions is used to provide an assessment of the potential functionality of boron nitride emitters as single photon sources capable of room temperature operation.

Adsorptive Separation and Sequestration of Krypton, I and C14 on Diamond Nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghosh, Tushar; Loyalka, Sudarsha; Prelas, Mark

The objective of this research proposal was to address the separation and sequestration of Kr and I from each other using nano-sized diamond particles and retaining these in diamond until they decay to the background level or can be used as a byproduct. Following removal of Kr and I, an adsorbent will be used to adsorb and store CO2 from the CO2 rich stream. A Field Enhanced Diffusion with Optical Activation (FEDOA-a large scale process that takes advantage of thermal, electrical, and optical activation to enhance the diffusion of an element into diamond structure) was used to load Kr andmore » I on micron or nano sized particles having a larger relative surface area. The diamond particles can be further increased by doping it with boron followed by irradiation in a neutron flux. Previous studies showed that the hydrogen storage capacity could be increased significantly by using boron-doped irradiated diamond particles. Diamond powders were irradiated for a longer time by placing them in a quartz tube. The surface area was measured using a Quantachrome Autosorb system. No significant increase in the surface area was observed. Total surface area was about 1.7 m2/g. This suggests the existence of very minimal pores. Interestingly it showed hysteresis upon desorption. A reason for this may be strong interaction between the surface and the nitrogen molecules. Adsorption runs at higher temperatures did not show any adsorption of krypton on diamond. Use of a GC with HID detector to determine the adsorption capacity from the breakthrough curves was attempted, but experimental difficulties were encountered.« less

Annealing of Heavily Boron-Doped Silicon: Effect on Electrical and Thermoelectric Properties.

PubMed

Zulian, Laura; Segrado, Francesco; Narducci, Dario

2017-03-01

In previous studies it was shown that heavily boron-doped nanocrystalline silicon submitted to thermal treatments at temperatures ≥800 °C is characterized by an anomalously high thermoelectric power factor. Its enhanced performances were ascribed to the formation of SiBx precipitates at grain boundary, leading to the formation of potential barriers that filter out low-energy carriers, then causing a simultaneous enhancement of the Seebeck coefficient and of the electrical conductivity. To further investigate the effect of thermal treatment on boron-doped nanocrystalline silicon, samples were submitted to a host of annealing processes or of sequences of them at temperatures between 900 and 1000 °C and for various amounts of time. Electrical conductivity and Hall effect measurements were carried out after each thermal treatment over the temperature range 20–300 K. They provided evidence of the formation of an impurity band, and of hopping conduction at very low temperatures. Hall resistivity data versus temperature provided therefore important insights in the electronic structure of the system, which will enable a more complete understanding of the factors ruling energy filtering in this class of materials.

Boron carbide coating deposition on tungsten and testing of tungsten layers and coating under intense plasma load

DOE Office of Scientific and Technical Information (OSTI.GOV)

Airapetov, A. A.; Begrambekov, L. B., E-mail: lbb@plasma.mephi.ru; Buzhinskiy, O. I.

2015-12-15

A device intended for boron carbide coating deposition and material testing under high heat loads is presented. A boron carbide coating 5 μm thick was deposited on the tungsten substrate. These samples were subjected to thermocycling loads in the temperature range of 400–1500°C. Tungsten layers deposited on tungsten substrates were tested in similar conditions. Results of the surface analysis are presented.

Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cells

DOE PAGES

Laine, Hannu S.; Vahanissi, Ville; Liu, Zhengjun; ...

2017-12-15

To facilitate cost-effective manufacturing of boron-implanted silicon solar cells as an alternative to BBr 3 diffusion, we performed a quantitative test of the gettering induced by solar-typical boron-implants with the potential for low saturation current density emitters (< 50 fA/cm 2). We show that depending on the contamination level and the gettering anneal chosen, such boron-implanted emitters can induce more than a 99.9% reduction in bulk iron point defect concentration. The iron point defect results as well as synchrotron-based Nano-X-ray-fluorescence investigations of iron precipitates formed in the implanted layer imply that, with the chosen experimental parameters, iron precipitation is themore » dominant gettering mechanism, with segregation-based gettering playing a smaller role. We reproduce the measured iron point defect and precipitate distributions via kinetics modeling. First, we simulate the structural defect distribution created by the implantation process, and then we model these structural defects as heterogeneous precipitation sites for iron. Unlike previous theoretical work on gettering via boron- or phosphorus-implantation, our model is free of adjustable simulation parameters. The close agreement between the model and experimental results indicates that the model successfully captures the necessary physics to describe the iron gettering mechanisms operating in boron-implanted silicon. Furthermore, this modeling capability allows high-performance, cost-effective implanted silicon solar cells to be designed.« less

Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laine, Hannu S.; Vahanissi, Ville; Liu, Zhengjun

To facilitate cost-effective manufacturing of boron-implanted silicon solar cells as an alternative to BBr 3 diffusion, we performed a quantitative test of the gettering induced by solar-typical boron-implants with the potential for low saturation current density emitters (< 50 fA/cm 2). We show that depending on the contamination level and the gettering anneal chosen, such boron-implanted emitters can induce more than a 99.9% reduction in bulk iron point defect concentration. The iron point defect results as well as synchrotron-based Nano-X-ray-fluorescence investigations of iron precipitates formed in the implanted layer imply that, with the chosen experimental parameters, iron precipitation is themore » dominant gettering mechanism, with segregation-based gettering playing a smaller role. We reproduce the measured iron point defect and precipitate distributions via kinetics modeling. First, we simulate the structural defect distribution created by the implantation process, and then we model these structural defects as heterogeneous precipitation sites for iron. Unlike previous theoretical work on gettering via boron- or phosphorus-implantation, our model is free of adjustable simulation parameters. The close agreement between the model and experimental results indicates that the model successfully captures the necessary physics to describe the iron gettering mechanisms operating in boron-implanted silicon. Furthermore, this modeling capability allows high-performance, cost-effective implanted silicon solar cells to be designed.« less

Chemiluminescence of BO{sub 2} to map the creation of thermal NO in flames

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maligne, D.; Cessou, A.; Stepowski, D.

The aim of this study is to detect and map the local conditions that generate thermal NO in flames. According to the Zeldovich mechanism, the formation of NO comes from the local conjunction of a high concentration of atomic oxygen and a temperature above a critical high level imposed by the high activation energy of the rate-limiting reaction. The green light emitted when a flame is seeded with boron salts is a chemiluminescence from the BO{sup *}{sub 2} that is chemically formed in its excited state when BO reacts with atomic oxygen. As the rate of this oxidation is alsomore » strongly increasing with temperature, the chemiluminescence of BO{sub 2} depends on the concentration of atomic oxygen and on the temperature in a way similar to the formation rate of thermal NO. This double analogy suggests the possibility of an experimental in situ simulation of the formation rate of thermal NO or at least the use of the chemiluminescence of BO{sub 2} to map the sites where thermal NO is being created. Spectroscopic experiments and comparisons with numerical simulations have been performed to test the feasibility of this technique in laminar premixed and diffusion methane/air flames. The agreement is good except in the burnt gases of fuel-rich flames. Imaging strategies with different spectral filters have been developed in the same flames to overcome the problem of interference from soot radiation in diffusion flames. (author)« less

Utilization of Tabula Rasa to Stabilize Bulk Lifetimes in n-Cz Silicon for High-Performance Solar Cell Processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

LaSalvia, Vincenzo; Jensen, Mallory Ann; Youssef, Amanda

2016-11-21

We investigate a high temperature, high cooling-rate anneal Tabula Rasa (TR) and report its implications on n-type Czochralski-grown silicon (n-Cz Si) for photovoltaic fabrication. Tabula Rasa aims at dissolving and homogenizing oxygen precipitate nuclei that can grow during the cell process steps and degrade the cell performance due to their high internal gettering and recombination activity. The Tabula Rasa thermal treatment is performed in a clean tube furnace with cooling rates >100 degrees C/s. We characterize the bulk lifetime by Sinton lifetime and photoluminescence mapping just after Tabula Rasa, and after the subsequent cell processing. After TR, the bulk lifetimemore » surprisingly degrades to <; 0.1ms, only to recover to values equal or higher than the initial non-treated wafer (several ms), after typical high temperature cell process steps. Those include boron diffusion and oxidation; phosphorus diffusion/oxidation; ambient annealing at 850 degrees C; and crystallization annealing of tunneling-passivating contacts (doped polycrystalline silicon on 1.5 nm thermal oxide). The drastic lifetime improvement during high temperature cell processing is attributed to improved external gettering of metal impurities and annealing of intrinsic point defects. Time and injection dependent lifetime spectroscopy further reveals the mechanisms of lifetime improvement after Tabula Rasa treatment. Additionally, we report the efficacy of Tabula Rasa on n-type Cz-Si wafers and its dependence on oxygen concentration, correlated to position within the ingot.« less

Annealing induced structural changes in amorphous Co{sub 23}Fe{sub 60}B{sub 17} film on Mo buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dwivedi, Jagrati, E-mail: jdwivedi.phy@gmail.com; Mishra, Ashutosh; Gupta, Ranjeeta

2016-05-23

Structural changes occurring in a thin amorphous Co{sub 23}Fe{sub 60}B{sub 17} film sandwiched between two Mo layers, as a function of thermal annealing has been studied. Thermal stability of the Co{sub 23}Fe{sub 60}B{sub 17} film is found to be significantly lower than the bulk ribbons. SIMS measurements show that during crystallization, boron which is expelled out of the crystallites, has a tendency to move towards the surface. No significant diffusion of boron in Mo buffer layer is observed. This result is in contrast with some earlier studies where it was proposed that the role of buffer layer of refractory metalmore » is to absorb boron which is expelled out of the bcc FeCo phase during crystallization.« less

Mechanisms of boron fiber strengthening by thermal treatment

NASA Technical Reports Server (NTRS)

Dicarlo, J. A.

1979-01-01

The fracture strain for boron on tungsten fibers can be improved by heat treatment under vacuum or argon environments. The mechanical basis for this improvement is thermally-induced axial contraction of the entire fiber, whereby strength-controlling core flaws are compressed and fiber fracture strain increased by the value of the contraction strain. By highly sensitive measurements of fiber density and volume, the physical mechanisms responsible for contraction under both environments was identified as boron atom diffusion out of the fiber sheath. The fiber contracts because the average volume of the resulting microvoid was determined to be only 0.26 + or - 0.09 the average atomic volume of the removed atom. The basic and practical implications of these results are discussed with particular emphasis on the theory, use, and limitations of heat-induced contraction as a simple cost-effective secondary processing method.

Structure, Mechanics and Synthesis of Nanoscale Carbon and Boron Nitride

NASA Astrophysics Data System (ADS)

Rinaldo, Steven G.

This thesis is divided into two parts. In Part I, we examine the properties of thin sheets of carbon and boron nitride. We begin with an introduction to the theory of elastic sheets, where the stretching and bending modes are considered in detail. The coupling between stretching and bending modes is thought to play a crucial role in the thermodynamic stability of atomically-thin 2D sheets such as graphene. In Chapter 2, we begin by looking at the fabrication of suspended, atomically thin sheets of graphene. We then study their mechanical resonances which are read via an optical transduction technique. The frequency of the resonators was found to depend on their temperature, as was their quality factor. We conclude by offering some interpretations of the data in terms of the stretching and bending modes of graphene. In Chapter 3, we look briefly at the fabrication of thin sheets of carbon and boron nitride nanotubes. We examine the structure of the sheets using transmission and scanning electron microscopy (TEM and SEM, respectively). We then show a technique by which one can make sheets suspended over a trench with adjustable supports. Finally, DC measurements of the resistivity of the sheets in the temperature range 600 -- 1400 C are presented. In Chapter 4, we study the folding of few-layer graphene oxide, graphene and boron nitride into 3D aerogel monoliths. The properties of graphene oxide are first considered, after which the structure of graphene and boron nitride aerogels is examined using TEM and SEM. Some models for their structure are proposed. In Part II, we look at synthesis techniques for boron nitride (BN). In Chapter 5, we study the conversion of carbon structures of boron nitride via the application of carbothermal reduction of boron oxide followed by nitridation. We apply the conversion to a wide variety of morphologies, including aerogels, carbon fibers and nanotubes, and highly oriented pyrolytic graphite. In the latter chapters, we look at the formation of boron nitride nanotubes (BNNTs). In Chapter 6, we look at various methods of producing BNNTs from boron droplets, and introduce a new method involving injection of boron powder into an induction furnace. In Chapter 7 we consider another useful process, where ammonia is reacted with boron vapor generated in situ, either through the reaction of boron with metal oxides or through the decomposition of metal borides.

Experimental Validation for Hot Stamping Process by Using Taguchi Method

NASA Astrophysics Data System (ADS)

Fawzi Zamri, Mohd; Lim, Syh Kai; Razlan Yusoff, Ahmad

2016-02-01

Due to the demand for reduction in gas emissions, energy saving and producing safer vehicles has driven the development of Ultra High Strength Steel (UHSS) material. To strengthen UHSS material such as boron steel, it needed to undergo a process of hot stamping for heating at certain temperature and time. In this paper, Taguchi method is applied to determine the appropriate parameter of thickness, heating temperature and heating time to achieve optimum strength of boron steel. The experiment is conducted by using flat square shape of hot stamping tool with tensile dog bone as a blank product. Then, the value of tensile strength and hardness is measured as response. The results showed that the lower thickness, higher heating temperature and heating time give the higher strength and hardness for the final product. In conclusion, boron steel blank are able to achieve up to 1200 MPa tensile strength and 650 HV of hardness.

Effects of processing and dopant on radiation damage removal in silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brandhorst, H. W., Jr.; Swartz, C. K.; Mehta, S.

1982-01-01

Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Static tensile and tensile creep testing of four boron nitride coated ceramic fibers at elevated temperatures

NASA Technical Reports Server (NTRS)

Coguill, Scott L.; Adams, Donald F.; Zimmerman, Richard S.

1989-01-01

Six types of uncoated ceramic fibers were static tensile and tensile creep tested at various elevated temperatures. Three types of boron nitride coated fibers were also tested. Room temperature static tensile tests were initially performed on all fibers, at gage lengths of 1, 2, and 4 inches, to determine the magnitude of end effects from the gripping system used. Tests at one elevated temperature, at gage lengths of 8 and 10 inches, were also conducted, to determine end effects at elevated temperatures. Fiber cross sectional shapes and areas were determined using scanning electron microscopy. Creep testing was typically performed for 4 hours, in an air atmosphere.

Microstructure of Vacuum-Brazed Joints of Super-Ni/NiCr Laminated Composite Using Nickel-Based Amorphous Filler Metal

NASA Astrophysics Data System (ADS)

Ma, Qunshuang; Li, Yajiang; Wu, Na; Wang, Juan

2013-06-01

Vacuum brazing of super-Ni/NiCr laminated composite and Cr18-Ni8 stainless steel was carried out using Ni-Cr-Si-B amorphous filler metal at 1060, 1080, and 1100 °C, respectively. Microstructure and phase constitution were investigated by means of optical and scanning electron microscopy, energy-dispersive spectroscopy, x-ray diffraction, and micro-hardness tester. When brazed at 1060-1080 °C, the brazed region can be divided into two distinct zones: isothermally solidified zone (ISZ) consisting of γ-Ni solid solution and athermally solidified zone (ASZ) consisting of Cr-rich borides. Micro-hardness of the Cr-rich borides formed in the ASZ was as high as 809 HV50 g. ASZ decreased with increase of the brazing temperature. Isothermal solidification occurred sufficiently at 1100 °C and an excellent joint composed of γ-Ni solid solution formed. The segregation of boron from ISZ to residual liquid phase is the reason of Cr-rich borides formed in ASZ. The formation of secondary precipitates in diffusion-affected zone is mainly controlled by diffusion of B.

Tourmaline mineralization in the Barberton greenstone belt, South Africa: early Archean metasomatism by evaporite-derived boron.

PubMed

Byerly, G R; Palmer, M R

1991-05-01

Tourmaline-rich rocks are common in the low-grade, interior portions of the Barberton greenstone belt of South Africa, where shallow-marine sediments and underlying altered basaltic and komatiitic lavas contain up to 50% tourmaline. The presence of tourmaline-bearing rip-up clasts, intraformational tourmaline pebbles and tourmaline-coated grains indicate that boron mineralization was a low-temperature, surficial process. The association of these lithologies with stromatolites, evaporites, and shallow-water sedimentary structures and the virtual absence of tourmaline in correlative deep-water facies rocks in the greenstone belt strengthens this model. Five tourmaline-bearing lithologic groups (basalts, komatiites, evaporite-bearing sediments, stromatolitic sediments, and quartz veins) are distinguished based on field, petrographic, and geochemical criteria. Individual tourmaline crystals within these lithologies show internal chemical and textural variations that reflect continued growth through intervals of change in bulk-rock and fluid composition accompanying one or more metasomatic events. Large single-crystal variations exist in Fe/Mg, Al/Fe, and alkali-site vacancies. A wide range in tourmaline composition exists in rocks altered from similar protoliths, but tourmalines in sediments and lavas have similar compositional variations. Boron-isotope analyses of the tourmalines suggest that the boron enrichment in these rocks has a major marine evaporitic component. Sediments with gypsum pseudomorphs and lavas altered at low temperatures by shallow-level brines have the highest delta 11B values (+2.2 to -1.9%); lower delta 11B values of late quartz veins (-3.7 to -5.7%) reflect intermediate temperature, hydrothermal remobilization of evaporitic boron. The delta 11B values of tourmaline-rich stromatolitic sediments (-9.8 and -10.5%) are consistent with two-stage boron enrichment, in which earlier marine evaporitic boron was hydrothermally remobilized and vented in shallow-marine or subaerial sites, mineralizing algal stromatolites. The stromatolite-forming algae preferentially may have lived near the sites of hydrothermal discharge in Archean times.

In situ evaluation of supersolidus liquid phase sintering phenomena of stainless steel 316L: Densification and distortion

NASA Astrophysics Data System (ADS)

Bollina, Ravi

Supersolidus liquid phase sintering (SLPS) is a variant of liquid phase sintering. In SLPS, prealloyed powders are heated between the solidus and liquidus temperature of the alloy. This thesis focuses on processing of stainless steel 316L via SLPS by adding boron. Various amounts of boron were added to study the effect of boron on densification and distortion. The sintering window for water atomized 316L with 0.2% boron ranges from 1430 to 1435°C and 1225 to 1245°C for water atomized 316L with 0.8% boron. The rate of change of liquid content with temperature dVL/dt decreases from 1.5%/°C to 0.1%/°C for in increase in boron content from 0 to 0.8%, giving a wider range and better control during sintering. Further; effect of boron on mechanical properties and corrosion properties was researched. It was possible to achieve tensile strength of 476+/-21 MPa and an yield strength of 250+/-5 MPa with an elongation of 15+/-2 % in water atomized 316L with 0.8% boron. Fracture analysis indicates the presence of a brittle boride phase along the grain boundary causing intergranular fracture resulting in poor ductility. The crux of this thesis discusses the evolution of apparent viscosity and its relation to the microstructure. Beam bending viscometry was successfully used to evaluate the in situ apparent viscosity evolution of water atomized 316L with 0.2 and 0.8% boron additions. The apparent viscosity drops from 174 GPa.s at 1200°C to 4 GPa.s at 1275°C with increasing fractional liquid coverage in the water atomized 316L with 0.8% boron. The apparent viscosity calculated from bending beam and was used as an input into a finite element model (FEM) derived from constitutive equations and gives an excellent, fit between simulation and experiment. The densification behavior of boron doped stainless steel was modelled using Master Sintering Curve (MSC) (based on work of sintering) for the first time. It is proven that MSC can be used to identify change in densification rate upon liquid formation during SLPS.

Nitric oxide diffusion to red blood cells limits extracellular, but not intraphagosomal, peroxynitrite formation by macrophages.

PubMed

Prolo, Carolina; Álvarez, María Noel; Ríos, Natalia; Peluffo, Gonzalo; Radi, Rafael; Romero, Natalia

2015-10-01

Macrophage-derived nitric oxide ((•)NO) participates in cytotoxic mechanisms against diverse microorganisms and tumor cells. These effects can be mediated by (•)NO itself or (•)NO-derived species such as peroxynitrite formed by its diffusion-controlled reaction with NADPH oxidase-derived superoxide radical anion (O(2)(•-)). In vivo, the facile extracellular diffusion of (•)NO as well as different competing consumption routes limit its bioavailability for the reaction with O(2)(•-) and, hence, peroxynitrite formation. In this work, we evaluated the extent by which (•)NO diffusion to red blood cells (RBC) can compete with activated macrophages-derived O(2)(•-) and affect peroxynitrite formation yields. Macrophage-dependent peroxynitrite production was determined by boron-based probes that react directly with peroxynitrite, namely, coumarin-7-boronic acid (CBA) and fluorescein-boronate (Fl-B). The influence of (•)NO diffusion to RBC on peroxynitrite formation was experimentally analyzed in co-incubations of (•)NO and O(2)(•-)-forming macrophages with erythrocytes. Additionally, we evaluated the permeation of (•)NO to RBC by measuring the intracellular oxidation of oxyhemoglobin to methemoglobin. Our results indicate that diluted RBC suspensions dose-dependently inhibit peroxynitrite formation, outcompeting the O(2)(•-) reaction. Computer-assisted kinetic studies evaluating peroxynitrite formation by its precursor radicals in the presence of RBC are in accordance with experimental results. Moreover, the presence of erythrocytes in the proximity of (•)NO and O(2)(•-)-forming macrophages prevented intracellular Fl-B oxidation pre-loaded in L1210 cells co-cultured with activated macrophages. On the other hand, Fl-B-coated latex beads incorporated in the macrophage phagocytic vacuole indicated that intraphagosomal probe oxidation by peroxynitrite was not affected by nearby RBC. Our data support that in the proximity of a blood vessel, (•)NO consumption by RBC will limit the extracellular formation (and subsequent cytotoxic effects) of peroxynitrite by activated macrophages, while the intraphagosomal yield of peroxynitrite will remain unaffected. Copyright © 2015. Published by Elsevier Inc.

Boron Carbide: Stabilization of Highly-Loaded Aqueous Suspensions, Pressureless Sintering, and Room Temperature Injection Molding

NASA Astrophysics Data System (ADS)

Diaz-Cano, Andres

Boron carbide (B4C) is the third hardest material after diamond and cubic boron nitride. It's unique combination of properties makes B4C a highly valuable material. With hardness values around 35 MPa, a high melting point, 2450°C, density of 2.52 g/cm3, and high chemical inertness, boron carbide is used in severe wear components, like cutting tools and sandblasting nozzles, nuclear reactors' control rots, and finally and most common application, armor. Production of complex-shaped ceramic component is complex and represents many challenges. Present research presents a new and novel approach to produce complex-shaped B4C components. Proposed approach allows forming to be done at room temperatures and under very low forming pressures. Additives and binder concentrations are kept as low as possible, around 5Vol%, while ceramics loadings are maximized above 50Vol%. Given that proposed approach uses water as the main solvent, pieces drying is simple and environmentally safe. Optimized formulation allows rheological properties to be tailored and adjust to multiple processing approaches, including, injection molding, casting, and additive manufacturing. Boron carbide samples then were pressureless sintered. Due to the high covalent character of boron carbide, multiples sintering aids and techniques have been proposed in order to achieve high levels of densification. However, is not possible to define a clear sintering methodology based on literature. Thus, present research developed a comprehensive study on the effect of multiple sintering aids on the densification of boron carbide when pressureless sintered. Relative densities above 90% were achieved with values above 30MPa in hardness. Current research allows extending the uses and application of boron carbide, and other ceramic systems, by providing a new approach to produce complex-shaped components with competitive properties.

Spherical boron nitride particles and method for preparing them

DOEpatents

Phillips, Jonathan; Gleiman, Seth S.; Chen, Chun-Ku

2003-11-25

Spherical and polyhedral particles of boron nitride and method of preparing them. Spherical and polyhedral particles of boron nitride are produced from precursor particles of hexagonal phase boron nitride suspended in an aerosol gas. The aerosol is directed to a microwave plasma torch. The torch generates plasma at atmospheric pressure that includes nitrogen atoms. The presence of nitrogen atoms is critical in allowing boron nitride to melt at atmospheric pressure while avoiding or at least minimizing decomposition. The plasma includes a plasma hot zone, which is a portion of the plasma that has a temperature sufficiently high to melt hexagonal phase boron nitride. In the hot zone, the precursor particles melt to form molten particles that acquire spherical and polyhedral shapes. These molten particles exit the hot zone, cool, and solidify to form solid particles of boron nitride with spherical and polyhedral shapes. The molten particles can also collide and join to form larger molten particles that lead to larger spherical and polyhedral particles.

Effects of deposition temperature and ammonia flow on metal-organic chemical vapor deposition of hexagonal boron nitride

NASA Astrophysics Data System (ADS)

Rice, Anthony; Allerman, Andrew; Crawford, Mary; Beechem, Thomas; Ohta, Taisuke; Spataru, Catalin; Figiel, Jeffrey; Smith, Michael

2018-03-01

The use of metal-organic chemical vapor deposition at high temperature is investigated as a means to produce epitaxial hexagonal boron nitride (hBN) at the wafer scale. Several categories of hBN films were found to exist based upon precursor flows and deposition temperature. Low, intermediate, and high NH3 flow regimes were found to lead to fundamentally different deposition behaviors. The low NH3 flow regimes yielded discolored films of boron sub-nitride. The intermediate NH3 flow regime yielded stoichiometric films that could be deposited as thick films. The high NH3 flow regime yielded self-limited deposition with thicknesses limited to a few mono-layers. A Langmuir-Hinshelwood mechanism is proposed to explain the onset of self-limited behavior for the high NH3 flow regime. Photoluminescence characterization determined that the intermediate and high NH3 flow regimes could be further divided into low and high temperature behaviors with a boundary at 1500 °C. Films deposited with both high NH3 flow and high temperature exhibited room temperature free exciton emission at 210 nm and 215.9 nm.

β-Rhombohedral Boron: At the Crossroads of the Chemistry of Boron and the Physics of Frustration [Boron: a frustrated element

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ogitsu, Tadashi; Schwegler, Eric; Galli, Giulia

2013-05-08

In the periodic table boron occupies a peculiar, crossover position: on the first row, it is surrounded by metal forming elements on the left and by non-metals on the right. In addition, it is the only non-metal of the third column. Therefore it is perhaps not surprising that the crystallographic structure and topology of its stable allotrope at room temperature (β-boron) are not shared by any other element, and are extremely complex. The formidable intricacy of β- boron, with interconnecting icosahedra, partially occupied sites, and an unusually large number of atoms per unit cell (more than 300) has been knownmore » for more than 40 years. Nevertheless boron remains the only element purified in significant quantities whose ground state geometry has not been completely determined by experiments. However theoretical progress reported in the last decade has shed light on numerous properties of elemental boron, leading to a thorough characterization of its structure at ambient conditions, as well as of its electronic and thermodynamic properties. This review discusses in detail the properties of β-boron, as inferred from experiments and the ab-initio theories developed in the last decade.« less

Electric heater for nuclear fuel rod simulators

DOEpatents

McCulloch, Reginald W.; Morgan, Jr., Chester S.; Dial, Ralph E.

1982-01-01

The present invention is directed to an electric cartridge-type heater for use as a simulator for a nuclear fuel pin in reactor studies. The heater comprises an elongated cylindrical housing containing a longitudinally extending helically wound heating element with the heating element radially inwardly separated from the housing. Crushed cold-pressed preforms of boron nitride electrically insulate the heating element from the housing while providing good thermal conductivity. Crushed cold-pressed preforms of magnesia or a magnesia-15 percent boron nitride mixture are disposed in the cavity of the helical heating element. The coefficient of thermal expansion of the magnesia or the magnesia-boron nitride mixture is higher than that of the boron nitride disposed about the heating element for urging the boron nitride radially outwardly against the housing during elevated temperatures to assure adequate thermal contact between the housing and the boron nitride.

Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marquez Rossy, Andres E.; Armstrong, Beth L.; Elliott, Amy M.

The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to anmore » azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.« less

A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiota, Koki, E-mail: a14510@sr.kagawa-nct.ac.jp; Kai, Kazuho; Nagaoka, Shiro, E-mail: nagaoka@es.kagawa-nct.ac.jp

The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As themore » result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.« less

Study of the effects of focused high-energy boron ion implantation in diamond

NASA Astrophysics Data System (ADS)

Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

2017-08-01

Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

Ternary phase equilibria in transition metal-boron-carbon-silicon systems. Part I. Related binary systems, Volume III. Systems Mo-B and W-B. Technical documentary report, 1 November 1964-1 June 1965

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rudy, E.; Windisch.

1965-07-01

On the basis of X-ray, melting point, metallographic, and differential thermoanalytical studies on molybdenum-boron and tungsten-boron alloys, constitution diagrams for both binary systems are presented. In the high temperature regions, the newly established phase diagrams differ significantly from previously reported systems. The results are discussed and compared with available literature data.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zinin, Pavel V.; Burgess, Katherine; Jia, Ruth

Dense BC{sub x} phases with high boron concentration are predicted to be metastable, superhard, and conductors or superconductors depending on boron concentration. However, up to this point, diamond-like boron rich carbides BC{sub x} (dl-BC{sub x}) phases have been thought obtainable only through high pressure and high temperature treatment, necessitating small specimen volume. Here, we use electron energy loss spectroscopy combined with transmission electron microscopy, Raman spectroscopy, surface Brillouin scattering, laser ultrasonics (LU) technique, and analysis of elastic properties to demonstrate that low pressure synthesis (chemical vapor deposition) of BC{sub x} phases may also lead to the creation of diamond-like boronmore » rich carbides. The elastic properties of the dl-BC{sub x} phases depend on the carbon sp²versus sp³ content, which decreases with increasing boron concentration, while the boron bonds determine the shape of the Raman spectra of the dl-BC{sub x} after high pressure-high temperature treatment. Using the estimation of the density value based on the sp³ fraction, the shear modulus μ of dl-BC₄, containing 10% carbon atoms with sp³ bonds, and dl-B₃C₂, containing 38% carbon atoms with sp³ bonds, were found to be μ = 19.3 GPa and μ = 170 GPa, respectively. The presented experimental data also imply that boron atoms lead to a creation of sp³ bonds during the deposition processes.« less

Tuning conductivity in boron nanowire by edge geometry

NASA Astrophysics Data System (ADS)

Bhuyan, Prabal Dev; Gupta, Sanjeev K.; Sonvane, Yogesh; Gajjar, P. N.

2018-04-01

In present study, we have investigated electronic and temperature dependent transport properties of carbyne like linear chain and ribbon like zigzag structures of Boron (B) nanowire. The linear chain structure showed higher electric and thermal conductivity, as it is sp-hybridized, than its counterpart ribbon (R) structure. However the conductivity of ribbon structure increases with increases in width due to edge geometry effect. The ribbon (3R) structure showed high electric and thermal conductivity of 8.0×1019 1/Ω m s and 0.59×1015 W/ m K respectively. Interestingly we have observed that B linear chain showed higher thermal conductivity of 0.23×1015 W/ m K than its ribbon R and 2R structure above 600K. Because of high Seebeck co-efficient of boron chain and ribbon (R) structures at low temperature, they could find applications in thermoelectric sensors. Our results show that tuning conductivity property of boron nanowire could be of great interest in research for future electric connector in nanodevices.

Development, Characterization, and Resultant Properties of a Carbon, Boron, and Chromium Ternary Diffusion System

NASA Astrophysics Data System (ADS)

Domec, Brennan S.

In today's industry, engineering materials are continuously pushed to the limits. Often, the application only demands high-specification properties in a narrowly-defined region of the material, such as the outermost surface. This, in combination with the economic benefits, makes case hardening an attractive solution to meet industry demands. While case hardening has been in use for decades, applications demanding high hardness, deep case depth, and high corrosion resistance are often under-served by this process. Instead, new solutions are required. The goal of this study is to develop and characterize a new borochromizing process applied to a pre-carburized AISI 8620 alloy steel. The process was successfully developed using a combination of computational simulations, calculations, and experimental testing. Process kinetics were studied by fitting case depth measurement data to Fick's Second Law of Diffusion and an Arrhenius equation. Results indicate that the kinetics of the co-diffusion method are unaffected by the addition of chromium to the powder pack. The results also show that significant structural degradation of the case occurs when chromizing is applied sequentially to an existing boronized case. The amount of degradation is proportional to the chromizing parameters. Microstructural evolution was studied using metallographic methods, simulation and computational calculations, and analytical techniques. While the co-diffusion process failed to enrich the substrate with chromium, significant enrichment is obtained with the sequential diffusion process. The amount of enrichment is directly proportional to the chromizing parameters with higher parameters resulting in more enrichment. The case consists of M7C3 and M23C6 carbides nearest the surface, minor amounts of CrB, and a balance of M2B. Corrosion resistance was measured with salt spray and electrochemical methods. These methods confirm the benefit of surface enrichment by chromium in the sequential diffusion method with corrosion resistance increasing directly with chromium concentration. The results also confirm the deleterious effect of surface-breaking case defects and the need to reduce or eliminate them. The best combination of microstructural integrity, mean surface hardness, effective case depth, and corrosion resistance is obtained in samples sequentially boronized and chromized at 870°C for 6hrs. Additional work is required to further optimize process parameters and case properties.

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

NASA Technical Reports Server (NTRS)

Corbett, J. W.; Cheng, L. J.; Jaworowski, A.; Karins, J. P.; Lee, Y. H.; Lindstroem, L.; Mooney, P. M.; Oehrlen, G.; Wang, K. L.

1979-01-01

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

Phase degradation in B xGa 1–xN films grown at low temperature by metalorganic vapor phase epitaxy

DOE PAGES

Gunning, Brendan P.; Moseley, Michael W.; Koleske, Daniel D.; ...

2016-11-01

Using metalorganic vapor phase epitaxy, a comprehensive study of B xGa 1-xN growth on GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure results in rough surfaces and poor boron incorporation efficiency, while growth at low-temperature and low-pressure (750–900 °C and 20 Torr) using nitrogen carrier gas results in improved surface morphology and boron incorporation up to ~7.4% as determined by nuclear reaction analysis. However, further structural analysis by transmission electron microscopy and x-ray pole figures points to severe degradation of the high boron composition films, into a twinned cubic structure with a high density of stackingmore » faults and little or no room temperature photoluminescence emission. Films with <1% triethylboron (TEB) flow show more intense, narrower x-ray diffraction peaks, near-band-edge photoluminescence emission at ~362 nm, and primarily wurtzite-phase structure in the x-ray pole figures. For films with >1% TEB flow, the crystal structure becomes dominated by the cubic phase. As a result, only when the TEB flow is zero (pure GaN), does the cubic phase entirely disappear from the x-ray pole figure, suggesting that under these growth conditions even very low boron compositions lead to mixed crystalline phases.« less

Phase degradation in B xGa 1–xN films grown at low temperature by metalorganic vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gunning, Brendan P.; Moseley, Michael W.; Koleske, Daniel D.

Using metalorganic vapor phase epitaxy, a comprehensive study of B xGa 1-xN growth on GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure results in rough surfaces and poor boron incorporation efficiency, while growth at low-temperature and low-pressure (750–900 °C and 20 Torr) using nitrogen carrier gas results in improved surface morphology and boron incorporation up to ~7.4% as determined by nuclear reaction analysis. However, further structural analysis by transmission electron microscopy and x-ray pole figures points to severe degradation of the high boron composition films, into a twinned cubic structure with a high density of stackingmore » faults and little or no room temperature photoluminescence emission. Films with <1% triethylboron (TEB) flow show more intense, narrower x-ray diffraction peaks, near-band-edge photoluminescence emission at ~362 nm, and primarily wurtzite-phase structure in the x-ray pole figures. For films with >1% TEB flow, the crystal structure becomes dominated by the cubic phase. As a result, only when the TEB flow is zero (pure GaN), does the cubic phase entirely disappear from the x-ray pole figure, suggesting that under these growth conditions even very low boron compositions lead to mixed crystalline phases.« less

Synergistic effect on the visible light activity of Ti3+ doped TiO2 nanorods/boron doped graphene composite

PubMed Central

Xing, Mingyang; Li, Xiao; Zhang, Jinlong

2014-01-01

TiO2/graphene (TiO2-x/GR) composites, which are Ti3+ self-doped TiO2 nanorods decorated on boron doped graphene sheets, were synthesized via a simple one-step hydrothermal method using low-cost NaBH4 as both a reducing agent and a boron dopant on graphene. The resulting TiO2 nanorods were about 200 nm in length with exposed (100) and (010) facets. The samples were characterized by X-ray diffraction (XRD), UV-visible diffuse reflectance spectroscopy, X-band electron paramagnetic resonance (EPR), X-ray photoelectron spectra (XPS), transmission electron microscope (TEM), Raman, and Fourier-transform infrared spectroscopy (FTIR). The XRD results suggest that the prepared samples have an anatase crystalline structure. All of the composites tested exhibited improved photocatalytic activities as measured by the degradation of methylene blue and phenol under visible light irradiation. This improvement was attributed to the synergistic effect of Ti3+ self-doping on TiO2 nanorods and boron doping on graphene. PMID:24974890

From Urey To The Ocean's Glacial Ph: News From The Boron-11 Paleo-acidimetry.

NASA Astrophysics Data System (ADS)

Zeebe, R. E.; Wolf-Gladrow, D. A.; Bijma, J.

Boron paleo-acidimetry is based on the stable boron isotope composition of foraminiferal shells which has been shown to be a function of seawater pH. It is cur- rently one of the most promising paleo-carbonate chemistry proxies. One important parameter of the proxy is the equilibrium fractionation between the dissolved boron species B(OH)3 and B(OH)- which was calculated to be 19 per mil at 25C by Kak- 4 ihana and Kotaka (1977), based on Urey's theory. The calculated equilibrium frac- tionation, however, depends on the vibrational frequencies of the molecules for which different values have been reported in the literature. We have recalculated the equilib- rium fractionation and find that it may be distinctly different from 19 per mil (this is the bad news). The good news is that - theoretically - the use of 11B as a paleo-pH indicator is not compromised through vital effects in planktonic foraminifera. We de- rive this conclusion by the use of a diffusion-reaction model that calculates pH profiles and 11B values in the vicinity of a foraminifer.

Process for producing wurtzitic or cubic boron nitride

DOEpatents

Holt, J.B.; Kingman, D.D.; Bianchini, G.M.

1992-04-28

Disclosed is a process for producing wurtzitic or cubic boron nitride comprising the steps of: [A] preparing an intimate mixture of powdered boron oxide, a powdered metal selected from the group consisting of magnesium or aluminum, and a powdered metal azide; [B] igniting the mixture and bringing it to a temperature at which self-sustaining combustion occurs; [C] shocking the mixture at the end of the combustion thereof with a high pressure wave, thereby forming as a reaction product, wurtzitic or cubic boron nitride and occluded metal oxide; and, optionally [D] removing the occluded metal oxide from the reaction product. Also disclosed are reaction products made by the process described.

Process for producing wurtzitic or cubic boron nitride

DOEpatents

Holt, J. Birch; Kingman, deceased, Donald D.; Bianchini, Gregory M.

1992-01-01

Disclosed is a process for producing wurtzitic or cubic boron nitride comprising the steps of: [A] preparing an intimate mixture of powdered boron oxide, a powdered metal selected from the group consisting of magnesium or aluminum, and a powdered metal azide; [B] igniting the mixture and bringing it to a temperature at which self-sustaining combustion occurs; [C] shocking the mixture at the end of the combustion thereof with a high pressure wave, thereby forming as a reaction product, wurtzitic or cubic boron nitride and occluded metal oxide; and, optionally [D] removing the occluded metal oxide from the reaction product. Also disclosed are reaction products made by the process described.

Engineering and Localization of Quantum Emitters in Large Hexagonal Boron Nitride Layers.

PubMed

Choi, Sumin; Tran, Toan Trong; Elbadawi, Christopher; Lobo, Charlene; Wang, Xuewen; Juodkazis, Saulius; Seniutinas, Gediminas; Toth, Milos; Aharonovich, Igor

2016-11-02

Hexagonal boron nitride is a wide-band-gap van der Waals material that has recently emerged as a promising platform for quantum photonics experiments. In this work, we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of micrometers wide) of hexagonal boron nitride. The emitters can be activated in as-grown hexagonal boron nitride by electron irradiation or high-temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at the edges of the flakes, unlike most luminescent point defects in three-dimensional materials. Our results constitute an important step on the roadmap of deploying hexagonal boron nitride in nanophotonics applications.

Joining of materials using laser heating

DOEpatents

Cockeram, Brian V.; Hicks, Trevor G.; Schmid, Glenn C.

2003-07-01

A method for diffusion bonding ceramic layers such as boron carbide, zirconium carbide, or silicon carbide uses a defocused laser beam to heat and to join ceramics with the use of a thin metal foil insert. The metal foil preferably is rhenium, molybdenum or titanium. The rapid, intense heating of the ceramic/metal/ceramic sandwiches using the defocused laser beam results in diffusive conversion of the refractory metal foil into the ceramic and in turn creates a strong bond therein.

Influence of Crucible Materials on High-temperature Properties of Vacuum-melted Nickel-chromium-cobalt Alloy

NASA Technical Reports Server (NTRS)

Decker, R F; Rowe, John P; Freeman, J W

1957-01-01

A study of the effect of induction-vacuum-melting procedure on the high-temperature properties of a titanium-and-aluminum-hardened nickel-base alloy revealed that a major variable was the type of ceramic used as a crucible. Reactions between the melt and magnesia or zirconia crucibles apparently increased high-temperature properties by introducing small amounts of boron or zirconium into the melts. Heats melted in alumina crucibles had relatively low rupture life and ductility at 1,600 F and cracked during hot-working as a result of deriving no boron or zirconium from the crucible.

Elevated relative humidity increases the incidence of boron deficiency in bedding plants

USDA-ARS?s Scientific Manuscript database

High relative humidity (RH) can cause lower concentrations of B accumulating in plants. The common greenhouse practice of controlling excess temperatures by applying mist irrigation to youngplants (plugs) results in elevated RH levels. Reports of boron (B) deficiency have become more prevalent ove...

Body temperature norms

MedlinePlus

Morrison SF. Regulation of body temperature. In: Boron WF, Boulpaep EL, eds. Medical Physiology . 3rd ed. Philadelphia, PA: Elsevier; 2017:chap 59. Sajadi MM, Mackowiak PA. Temperature regulation and the pathogenesis ...

Mechanisms of boron fiber strengthening by thermal treatment

NASA Technical Reports Server (NTRS)

Dicarlo, J. A.

1979-01-01

The fracture strain for boron on tungsten fibers was studied for improvement by heat treatment under vacuum or argon environments. The mechanical basis for this improvement is thermally-induced axial contraction of the entire fiber, whereby strength-controlling core flaws are compressed and fiber fracture strain increased by the value of the contraction strain. By highly sensitive measurements of fiber density and volume, the physical mechanism responsible for contraction under both environments was identified as boron atom diffusion out of the fiber sheath. The fiber contracts because the average volume of the resulting microvoid was determined to be only 0.26 plus or minus 0.09 the average atomic volume of the removed atom. The basic and practical implications of these results are discussed with particular emphasis on the theory, use, and limitations of heat-induced contraction as a simple cost-effective secondary processing method.

Temperature Dependence of Gas Properties in Polynomial Form

DTIC Science & Technology

1981-01-01

Carbonyl Sulfide Chlorine Chlorine (Monatomic) Chlorine Dioxide Chlorine Fluoride Chlorine Monoxide Chlorine Oxide Chlorine Trifluoride ...dis- cussed in Section 5 and the following eqn: 100-1500K~ Cp(T)= 515.3754 + 0.426933T -2.91036E-04T 2 -+ 6.836113E-08Ti CHLORINE TRIFLUORIDE C1F 3...3 Trimeric Boron Tribromide BBr3 250.538 33.186 A-3 Boron Trichloride BC1 3 117.170 70.959 A-4 Boron Trifluoride BF3 67.806 122.619 A-4 Bromine Br2

Induction annealing and subsequent quenching: effect on the thermoelectric properties of boron-doped nanographite ensembles.

PubMed

Xie, Ming; Lee, Chee Huei; Wang, Jiesheng; Yap, Yoke Khin; Bruno, Paola; Gruen, Dieter; Singh, Dileep; Routbort, Jules

2010-04-01

Boron-doped nanographite ensembles (NGEs) are interesting thermoelectric nanomaterials for high temperature applications. Rapid induction annealing and quenching has been applied to boron-doped NGEs using a relatively low-cost, highly reliable, laboratory built furnace to show that substantial improvements in thermoelectric power factors can be achieved using this methodology. Details of the design and performance of this compact induction furnace as well as results of the thermoelectric measurements will be reported here.

Recoil implantation of boron into silicon by high energy silicon ions

NASA Astrophysics Data System (ADS)

Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan

2001-07-01

A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.

Boron Abundances in A and B-type Stars

NASA Technical Reports Server (NTRS)

Lambert, David L.

1997-01-01

Boron abundances in A- and B-type stars may be a successful way to track evolutionary effects in these hot stars. The light elements - Li, Be, and B - are tracers of exposure to temperatures more moderate than those in which the H-burning CN-cycle operates. Thus, any exposure of surface stellar layers to deeper layers will affect these light element abundances. Li and Be are used in this role in investigations of evolutionary processes in cool stars, but are not observable in hotter stars. An investigation of boron, however, is possible through the B II 1362 A resonance line. We have gathered high resolution spectra from the IUE database of A- and B-type stars near 10 solar mass for which nitrogen abundances have been determined. The B II 1362 A line is blended throughout; the temperature range of this program, requiring spectrum syntheses to recover the boron abundances. For no star could we synthesize the 1362 A region using the meteoritic/solar boron abundance of log e (B) = 2.88; a lower boron abundance was necessary which may reflect evolutionary effects (e.g., mass loss or mixing near the main-sequence), the natal composition of the star forming regions, or a systematic error in the analyses (e.g., non-LTE effects). Regardless of the initial boron abundance, and despite the possibility of non-LTE effects, it seems clear that boron is severely depleted in some stars. It may be that the nitrogen and boron abundances are anticorrelated, as would be expected from mixing between the H-burning and outer stellar layers. If, as we suspect, a residue of boron is present in the A-type supergiants, we may exclude a scenario in which mixing occurs continuously between the surface and the deep layers operating the CN-cycle. Further exploitation of the B II 1362 A line as an indicator of the evolutionary status of A- and B-type stars will require a larger stellar sample to be observed with higher signal-to-noise as attainable with the Hubble Space Telescope.

Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilking, S., E-mail: Svenja.Wilking@uni-konstanz.de; Ebert, S.; Herguth, A.

The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550 °C seems tomore » be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects.« less

Polar Localization of the NIP5;1 Boric Acid Channel Is Maintained by Endocytosis and Facilitates Boron Transport in Arabidopsis Roots

PubMed Central

Yoshinari, Akira; Shimada, Tomoo; Mitani-Ueno, Namiki

2017-01-01

Boron uptake in Arabidopsis thaliana is mediated by nodulin 26-like intrinsic protein 5;1 (NIP5;1), a boric acid channel that is located preferentially on the soil side of the plasma membrane in root cells. However, the mechanism underlying this polar localization is poorly understood. Here, we show that the polar localization of NIP5;1 in epidermal and endodermal root cells is mediated by the phosphorylation of Thr residues in the conserved TPG (ThrProGly) repeat in the N-terminal region of NIP5;1. Although substitutions of Ala for three Thr residues in the TPG repeat did not affect lateral diffusion in the plasma membrane, these substitutions inhibited endocytosis and strongly compromised the polar localization of GFP-NIP5;1. Consistent with this, the polar localization was compromised in µ subunit mutants of the clathrin adaptor AP2. The Thr-to-Ala substitutions did not affect the boron transport activity of GFP-NIP5;1 in Xenopus laevis oocytes but did inhibit the ability to complement boron translocation to shoots and rescue growth defects in nip5;1-1 mutant plants under boron-limited conditions. These results demonstrate that the polar localization of NIP5;1 is maintained by clathrin-mediated endocytosis, is dependent on phosphorylation in the TPG repeat, and is necessary for the efficient transport of boron in roots. PMID:28341806

Polar Localization of the NIP5;1 Boric Acid Channel Is Maintained by Endocytosis and Facilitates Boron Transport in Arabidopsis Roots.

PubMed

Wang, Sheliang; Yoshinari, Akira; Shimada, Tomoo; Hara-Nishimura, Ikuko; Mitani-Ueno, Namiki; Feng Ma, Jian; Naito, Satoshi; Takano, Junpei

2017-04-01

Boron uptake in Arabidopsis thaliana is mediated by nodulin 26-like intrinsic protein 5;1 (NIP5;1), a boric acid channel that is located preferentially on the soil side of the plasma membrane in root cells. However, the mechanism underlying this polar localization is poorly understood. Here, we show that the polar localization of NIP5;1 in epidermal and endodermal root cells is mediated by the phosphorylation of Thr residues in the conserved TPG (ThrProGly) repeat in the N-terminal region of NIP5;1. Although substitutions of Ala for three Thr residues in the TPG repeat did not affect lateral diffusion in the plasma membrane, these substitutions inhibited endocytosis and strongly compromised the polar localization of GFP-NIP5;1. Consistent with this, the polar localization was compromised in µ subunit mutants of the clathrin adaptor AP2. The Thr-to-Ala substitutions did not affect the boron transport activity of GFP-NIP5;1 in Xenopus laevis oocytes but did inhibit the ability to complement boron translocation to shoots and rescue growth defects in nip5;1-1 mutant plants under boron-limited conditions. These results demonstrate that the polar localization of NIP5;1 is maintained by clathrin-mediated endocytosis, is dependent on phosphorylation in the TPG repeat, and is necessary for the efficient transport of boron in roots. © 2017 American Society of Plant Biologists. All rights reserved.

Aqueous sodium borohydride induced thermally stable porous zirconium oxide for quick removal of lead ions

PubMed Central

Nayak, Nadiya B.; Nayak, Bibhuti B.

2016-01-01

Aqueous sodium borohydride (NaBH4) is well known for its reducing property and well-established for the development of metal nanoparticles through reduction method. In contrary, this research paper discloses the importance of aqueous NaBH4 as a precipitating agent towards development of porous zirconium oxide. The boron species present in aqueous NaBH4 play an active role during gelation as well as phase separated out in the form of boron complex during precipitation, which helps to form boron free zirconium hydroxide [Zr(OH)4] in the as-synthesized condition. Evolved in-situ hydrogen (H2) gas-bubbles also play an important role to develop as-synthesized loose zirconium hydroxide and the presence of intra-particle voids in the loose zirconium hydroxide help to develop porous zirconium oxide during calcination process. Without any surface modification, this porous zirconium oxide quickly adsorbs almost hundred percentages of toxic lead ions from water solution within 15 minutes at normal pH condition. Adsorption kinetic models suggest that the adsorption process was surface reaction controlled chemisorption. Quick adsorption was governed by surface diffusion process and the adsorption kinetic was limited by pore diffusion. Five cycles of adsorption-desorption result suggests that the porous zirconium oxide can be reused efficiently for removal of Pb (II) ions from aqueous solution. PMID:26980545

High-pressure, high-temperature synthesis of superhard boron suboxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hubert, H.; Garvie, L.A.J.; Leinenweber, K.

A multianvil device was used to investigate the formation of B{sub x}O phases produced in the 2 to 10 GPa pressure range with temperatures between 1,000 and 1,800 C. Amorphous and crystalline B and BP were oxidized using B{sub 2}O{sub 3} and CrO{sub 3}. Using powder X-ray diffraction and parallel electron energy-loss spectroscopy (PEELS), the authors were unable to detect graphitic or diamond-structured B{sub 2}O, reported in previous studies. The refractory boride B{sub 6}O, which has the {alpha}-rhombohedral boron structure, is the dominant suboxide in the P and T range of the investigation. PEELS with a transmission electron microscope wasmore » used to characterize the boron oxides.« less

Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen

NASA Astrophysics Data System (ADS)

Makarenko, L. F.; Lastovskii, S. B.; Yakushevich, H. S.; Moll, M.; Pintilie, I.

2018-04-01

Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. Their activation is accompanied by the appearance of interstitial carbon atoms. It has been found that at rather high forward current densities which enhance BiOi complex disappearance, a retardation of Ci annealing takes place. Contrary to conventional thermal annealing of the interstitial boron-interstitial oxygen complex, the use of forward current injection helps to recover an essential part of charge carriers removed due to irradiation.

Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

NASA Technical Reports Server (NTRS)

Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

1992-01-01

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

The Modification of Polyurethane Foams Using New Boroorganic Polyols (II) Polyurethane Foams from Boron-Modified Hydroxypropyl Urea Derivatives

PubMed Central

2014-01-01

The work focuses on research related to determination of application possibility of new, ecofriendly boroorganic polyols in rigid polyurethane foams production. Polyols were obtained from hydroxypropyl urea derivatives esterified with boric acid and propylene carbonate. The influence of esterification type on properties of polyols and next on polyurethane foams properties was determined. Nitrogen and boron impacts on the foams' properties were discussed, for instance, on their physical, mechanical, and electric properties. Boron presence causes improvement of dimensional stability and thermal stability of polyurethane foams. They can be applied even at temperature 150°C. Unfortunately, introducing boron in polyurethanes foams affects deterioration of their water absorption, which increases as compared to the foams that do not contain boron. However, presence of both boron and nitrogen determines the decrease of the foams combustibility. Main impact on the decrease combustibility of the obtained foams has nitrogen presence, but in case of proper boron and nitrogen ratio their synergic activity on the combustibility decrease can be easily seen. PMID:24587721

Search for giant magnetic anisotropy in transition-metal dimers on defected hexagonal boron nitride sheet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, J.; Wang, H.; Wu, R. Q., E-mail: wur@uci.edu

2016-05-28

Structural and magnetic properties of many transition-metal dimers embedded in a defected hexagonal boron nitride monolayer are investigated through density functional calculations to search for systems with magnetic anisotropy energies (MAEs) larger than 30meV. In particular, Ir–Ir@Dh–BN is found to have both large MAE (∼126 meV) and high structural stability against dissociation and diffusion, and it hence can serve as magnetic unit in spintronics and quantum computing devices. This giant MAE mainly results from the spin orbit coupling and the magnetization of the upper Ir atom, which is in a rather isolated environment.

Boron-carbide-aluminum and boron-carbide-reactive metal cermets

DOEpatents

Halverson, Danny C.; Pyzik, Aleksander J.; Aksay, Ilhan A.

1986-01-01

Hard, tough, lightweight boron-carbide-reactive metal composites, particularly boron-carbide-aluminum composites, are produced. These composites have compositions with a plurality of phases. A method is provided, including the steps of wetting and reacting the starting materials, by which the microstructures in the resulting composites can be controllably selected. Starting compositions, reaction temperatures, reaction times, and reaction atmospheres are parameters for controlling the process and resulting compositions. The ceramic phases are homogeneously distributed in the metal phases and adhesive forces at ceramic-metal interfaces are maximized. An initial consolidation step is used to achieve fully dense composites. Microstructures of boron-carbide-aluminum cermets have been produced with modulus of rupture exceeding 110 ksi and fracture toughness exceeding 12 ksi.sqroot.in. These composites and methods can be used to form a variety of structural elements.

Boron-carbide-aluminum and boron-carbide-reactive metal cermets. [B/sub 4/C-Al

DOEpatents

Halverson, D.C.; Pyzik, A.J.; Aksay, I.A.

1985-05-06

Hard, tough, lighweight boron-carbide-reactive metal composites, particularly boron-carbide-aluminum composites, are produced. These composites have compositions with a plurality of phases. A method is provided, including the steps of wetting and reacting the starting materials, by which the microstructures in the resulting composites can be controllably selected. Starting compositions, reaction temperatures, reaction times, and reaction atmospheres are parameters for controlling the process and resulting compositions. The ceramic phases are homogeneously distributed in the metal phases and adhesive forces at ceramic-metal interfaces are maximized. An initial consolidated step is used to achieve fully dense composites. Microstructures of boron-carbide-aluminum cermets have been produced with modules of rupture exceeding 110 ksi and fracture toughness exceeding 12 ksi..sqrt..in. These composites and methods can be used to form a variety of structural elements.

Semiconductor material and method for enhancing solubility of a dopant therein

DOEpatents

Sadigh, Babak; Lenosky, Thomas J.; Rubia, Tomas Diaz; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

2003-09-09

A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein

DOEpatents

Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

2005-03-29

A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

NASA Astrophysics Data System (ADS)

Gao, Chao; Lu, Yunhao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren

2014-01-01

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300-500 °C leads to further B deactivation, while that at 600-800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B2I complexes results in further B deactivation in the following CFA at 300-500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600-800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

Impact of tensile strain on the thermal transport of zigzag hexagonal boron nitride nanoribbon: An equilibrium molecular dynamics study

NASA Astrophysics Data System (ADS)

Navid, Ishtiaque Ahmed; Intisar Khan, Asir; Subrina, Samia

2018-02-01

The thermal conductivity of single layer strained hexagonal boron nitride nanoribbon (h-BNNR) has been computed using the Green—Kubo formulation of Equilibrium Molecular Dynamics (EMD) simulation. We have investigated the impact of strain on thermal transport of h-BNNR by varying the applied tensile strain from 1% upto 5% through uniaxial loading. The thermal conductivity of h-BNNR decreases monotonically with the increase of uniaxial tensile strain keeping the sample size and temperature constant. The thermal conductivity can be reduced upto 86% for an applied uniaxial tensile strain of 5%. The impact of temperature and width variation on the thermal conductivity of h-BNNR has also been studied under different uniaxial tensile strain conditions. With the increase in temperature, the thermal conductivity of strained h-BNNR exhibits a decaying characteristics whereas it shows an opposite pattern with the increasing width. Such study would provide a good insight on the strain tunable thermal transport for the potential device application of boron nitride nanostructures.

3-D laser confocal microscopy study of the oxidation of NdFeB magnets in atmospheric conditions

NASA Astrophysics Data System (ADS)

Meakin, J. P.; Speight, J. D.; Sheridan, R. S.; Bradshaw, A.; Harris, I. R.; Williams, A. J.; Walton, A.

2016-08-01

Neodymium iron boron (NdFeB) magnets are used in a number of important applications, such as generators in gearless wind turbines, motors in electric vehicles and electronic goods (e.g.- computer hard disk drives, HDD). Hydrogen can be used as a processing gas to separate and recycle scrap sintered Nd-Fe-B magnets from end-of-life products to form a powder suitable for recycling. However, the magnets are likely to have been exposed to atmospheric conditions prior to processing, and any oxidation could lead to activation problems for the hydrogen decrepitation reaction. Many previous studies on the oxidation of NdFeB magnets have been performed at elevated temperatures; however, few studies have been formed under atmospheric conditions. In this paper a combination of 3-D laser confocal microscopy and Raman spectroscopy have been used to assess the composition, morphology and rate of oxidation/corrosion on scrap sintered NdFeB magnets. Confocal microscopy has been employed to measure the growth of surface reaction products at room temperature, immediately after exposure to air. The results showed that there was a significant height increase at the triple junctions of the Nd-rich grain boundaries. Using Raman spectroscopy, the product was shown to consist of Nd2O3 and formed only on the Nd-rich triple junctions. The diffusion coefficient of the triple junction reaction product growth at 20 °C was determined to be approximately 4 × 10-13 cm2/sec. This value is several orders of magnitude larger than values derived from the diffusion controlled oxide growth observations at elevated temperatures in the literature. This indicates that the growth of the room temperature oxidation products are likely defect enhanced processes at the NdFeB triple junctions.

Analysis of boron dilution in a four-loop PWR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, J.G.; Sha, W.T.

1995-03-01

Thermal mixing and boron dilution in a pressurized water reactor were analyzed with COMMIX codes. The reactor system was the four-loop Zion reactor. Two boron dilution scenarios were analyzed. In the first scenario, the plant is in cold shutdown and the reactor coolant system has just been filled after maintenance on the steam generators. To flush the air out of the steam generator tubes, a reactor coolant pump (RCP) is started, with the water in the pump suction line devoid of boron and at the same temperature as the coolant in the system. In the second scenario, the plant ismore » at hot standby and the reactor coolant system has been heated to operating temperature after a long outage. It is assumed that an RCP is started, with the pump suction line filled with cold unborated water, forcing a slug of diluted coolant down the downcomer and subsequently through the reactor core. The subsequent transient thermal mixing and boron dilution that would occur in the reactor system is simulated for these two scenarios. The reactivity insertion rate and the total reactivity are evaluated and a sensitivity study is performed to assess the accuracy of the numerical modeling of the geometry of the reactor coolant system.« less

Surface decoration through electrostatic interaction leading to enhanced reactivity: Low temperature synthesis of nanostructured chromium borides (CrB and CrB{sub 2})

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menaka,; Kumar, Bharat; Kumar, Sandeep

The present study describes a novel low temperature route at ambient pressure for the synthesis of nanocrystalline chromium borides (CrB and CrB{sub 2}) without using any flux or additives. The favorable and intimate mixing of nanoparticles of chromium acetate (Cr source) and boron forms an active chromium–boron precursor which decomposes at much lower temperature (400 °C) to form CrB (which is ∼1000 °C less than the known ambient pressure synthesis). The chromium acetate nanoparticles (∼5 nm) decorate the larger boron particles (150–200 nm) due to electrostatic interactions resulting from opposing surface charges of boron (zeta potential:+48.101 mV) and chromium acetatemore » (zeta potential:−4.021 mV) in ethanolic medium and is evident in the TEM micrographs. The above method leads to the formation of pure CrB film like structure at 400 °C and nanospheres (40–60 nm) at 600 °C. Also, chromium diboride (CrB{sub 2}) nanoparticles (25 nm) could be obtained at 1000 °C. - Graphical abstract: Variation of surface charge of reactants, precursor and the products, chromium borides (CrB and CrB{sub 2}). Highlights: ► Novel borothermal reduction process for synthesis of chromium boride. ► Significant lowering of reaction temperature to obtain nanocrystalline chromium boride. ► Enhanced reactivity due to appropriate surface interactions.« less

Ultra low friction carbon/carbon composites for extreme temperature applications

DOEpatents

Erdemir, Ali; Busch, Donald E.; Fenske, George R.; Lee, Sam; Shepherd, Gary; Pruett, Gary J.

2001-01-01

A carbon/carbon composite in which a carbon matrix containing a controlled amount of boron or a boron compound is reinforced with carbon fiber exhibits a low coefficient of friction, i.e., on the order of 0.04 to 0.1 at temperatures up to 600.degree. C., which is one of the lowest frictional coefficients for any type of carbonaceous material, including graphite, glassy carbon, diamond, diamond-like carbon and other forms of carbon material. The high degree of slipperiness of the carbon composite renders it particularly adapted for limiting friction and wear at elevated temperatures such as in seals, bearings, shafts, and flexible joints

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

2002-01-01

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

1999-01-01

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Explosively driven low-density foams and powders

DOEpatents

Viecelli, James A [Orinda, CA; Wood, Lowell L [Simi Valley, CA; Ishikawa, Muriel Y [Livermore, CA; Nuckolls, John H [Danville, CA; Pagoria, Phillip F [Livermore, CA

2010-05-04

Hollow RX-08HD cylindrical charges were loaded with boron and PTFE, in the form of low-bulk density powders or powders dispersed in a rigid foam matrix. Each charge was initiated by a Comp B booster at one end, producing a detonation wave propagating down the length of the cylinder, crushing the foam or bulk powder and collapsing the void spaces. The PdV work done in crushing the material heated it to high temperatures, expelling it in a high velocity fluid jet. In the case of boron particles supported in foam, framing camera photos, temperature measurements, and aluminum witness plates suggest that the boron was completely vaporized by the crush wave and that the boron vapor turbulently mixed with and burned in the surrounding air. In the case of PTFE powder, X-ray photoelectron spectroscopy of residues recovered from fragments of a granite target slab suggest that heating was sufficient to dissociate the PTFE to carbon vapor and molecular fluorine which reacted with the quartz and aluminum silicates in the granite to form aluminum oxide and mineral fluoride compounds.

Probing carbon impurities in hexagonal boron nitride epilayers

NASA Astrophysics Data System (ADS)

Uddin, M. R.; Li, J.; Lin, J. Y.; Jiang, H. X.

2017-05-01

Carbon doped hexagonal boron nitride epilayers have been grown by metal organic chemical vapor deposition. Photocurrent excitation spectroscopy has been utilized to probe the energy levels associated with carbon impurities in hexagonal boron nitride (h-BN). The observed transition peaks in photocurrent excitation spectra correspond well to the energy positions of the bandgap, substitutional donors (CB, carbon impurities occupying boron sites), and substitutional acceptors (CN, carbon impurities occupying nitrogen sites). From the observed transition peak positions, the derived energy level of CB donors in h-BN is ED ˜ 0.45 eV, which agrees well with the value deduced from the temperature dependent electrical resistivity. The present study further confirms that the room temperature bandgap of h-BN is about 6.42-6.45 eV, and the CN deep acceptors have an energy level of about 2.2-2.3 eV. The results also infer that carbon doping introduces both shallow donors (CB) and deep acceptors (CN) via self-compensation, and the energy level of carbon donors appears to be too deep to enable carbon as a viable candidate as an n-type dopant in h-BN epilayers.

Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Do, Woori; Jin, Won-Beom; Choi, Jungwan

2014-10-15

Highlights: • Intensified visible light irradiation was generated via a high-powered Xe arc lamp. • The disordered Si atomic structure absorbs the intensified visible light. • The rapid heating activates electrically boron-implanted Si thin films. • Flash lamp heating is applicable to low temperature polycrystalline Si thin films. - Abstract: Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in themore » electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.« less

Ab-initio study of thermodynamic properties of boron nanowire at atomic scale

NASA Astrophysics Data System (ADS)

Bhuyan, Prabal D.; Gupta, Sanjeev K.; Sonvane, Y.; Gajjar, P. N.

2018-04-01

In the present work, we have optimized ribbon like zigzag structure of boron (B) nanowire (NW) and investigated vibrational and thermodynamic properties using quasi-harmonic approximations (QHA). All positive phonon in the phonon dispersive curve have confirmed dynamical stability of ribbon B-NW. The thermodynamic properties, like Debye temperature, internal energy and specific heat, are calculated as a function of temperature. The variation of specific heat is proportional to T3 Debye law at lower temperature for B-NW, while it becomes constant above room temperature at 1200K; obeys Dulong-Petit's law. The high Debye temperature of 1120K is observed at ambient temperature, which can be attributed to high thermal conductivity. Our study shows that B-NW with high thermal conductivity could be the next generation electron connector for nanoscale electronic devices.

Effect of temperature and thermal history on borosilicate glass structure

NASA Astrophysics Data System (ADS)

Angeli, Frédéric; Villain, Olivier; Schuller, Sophie; Charpentier, Thibault; de Ligny, Dominique; Bressel, Lena; Wondraczek, Lothar

2012-02-01

The influence of the temperature and quenching rate on the structure of a borosilicate glass was studied by high-resolution solid-state 11B, 23Na, 29Si nuclear magnetic resonance (NMR) and high-temperature Raman spectroscopy. Data were obtained for glass in the solid state after annealing and quenching at cooling rates covering four orders of magnitude as well as in the liquid state from Raman experiments and from calorimetry and rheological data. Nuclear magnetic resonance measurements were used to calibrate the Raman spectra in order to quantify the change in boron coordination with temperature. This result can then be used to determine the fictive temperature of the glass directly from the boron coordination. The fictive temperature, heat capacity, and configurational entropy are extracted from calorimetry and viscosity measurements. Changes in the boron coordination account for only 25% of the configurational heat capacity of the liquid. The structural parameters capable of accounting for the remaining quantity are discussed on the basis of structural data, both local (inhomogeneity of the sodium distribution) and medium-range (from NMR parameter distribution). It has thus been shown that, although the B-O-B angular distributions of the boroxol rings (and probably the Si-O-Si distributions) are not affected by temperature, a structural disorder is identified through the angular distributions of the bonds linking borate and silicate groups.

Boron-based nanostructures: Synthesis, functionalization, and characterization

NASA Astrophysics Data System (ADS)

Bedasso, Eyrusalam Kifyalew

Boron-based nanostructures have not been explored in detail; however, these structures have the potential to revolutionize many fields including electronics and biomedicine. The research discussed in this dissertation focuses on synthesis, functionalization, and characterization of boron-based zero-dimensional nanostructures (core/shell and nanoparticles) and one-dimensional nanostructures (nanorods). The first project investigates the synthesis and functionalization of boron-based core/shell nanoparticles. Two boron-containing core/shell nanoparticles, namely boron/iron oxide and boron/silica, were synthesized. Initially, boron nanoparticles with a diameter between 10-100 nm were prepared by decomposition of nido-decaborane (B10H14) followed by formation of a core/shell structure. The core/shell structures were prepared using the appropriate precursor, iron source and silica source, for the shell in the presence of boron nanoparticles. The formation of core/shell nanostructures was confirmed using high resolution TEM. Then, the core/shell nanoparticles underwent a surface modification. Boron/iron oxide core/shell nanoparticles were functionalized with oleic acid, citric acid, amine-terminated polyethylene glycol, folic acid, and dopamine, and boron/silica core/shell nanoparticles were modified with 3-(amino propyl) triethoxy silane, 3-(2-aminoethyleamino)propyltrimethoxysilane), citric acid, folic acid, amine-terminated polyethylene glycol, and O-(2-Carboxyethyl)polyethylene glycol. A UV-Vis and ATR-FTIR analysis established the success of surface modification. The cytotoxicity of water-soluble core/shell nanoparticles was studied in triple negative breast cancer cell line MDA-MB-231 and the result showed the compounds are not toxic. The second project highlights optimization of reaction conditions for the synthesis of boron nanorods. This synthesis, done via reduction of boron oxide with molten lithium, was studied to produce boron nanorods without any contamination and with a uniform size distribution. Various reaction parameters such as temperature, reaction time, and sonication were altered to find the optimal reaction conditions. Once these conditions were determined, boron nanorods were produced then functionalized with amine-terminated polyethylene glycol.

Development of a Novel Ni-Fe-Cr-B-Si Interlayer Material for Transient Liquid Phase Bonding of Inconel 718

NASA Astrophysics Data System (ADS)

Tarai, U. K.; Robi, P. S.; Pal, Sukhomay

2018-04-01

A Ni-Cr-Fe-Si-B based interlayer material was developed by mechanical alloying (MA) process in a high-energy planetary ball mill. Equiaxed alloy powders of size 12 µm was obtained after milling for 50 hours. X-ray diffraction analysis of the milled powder revealed that milling of elemental powders initially resulted in microcrystalline alloy powder having face centered cubic structure, which on subsequent milling resulted in nano-crystallice alloy powder with a crystallite size of 3.2 nm. XRD analysis also reveals formation of metastable eutectic alloys resulting in lowering of the melting point of the interlayer material to 1025 °C. IN 718 superalloy samples were joined at 1050°C using the developed interlayer. A homogeneous joint was formed by the newly developed interlayer material. Three different zones were observed at the bond (i) isothermally solidified zone, (ii) diffusion affected zone and (iii) unaffected base metal. In the diffusion-affected zone, boron was present at the grain boundaries of Ni γ matrix in bulky metal borides form. The diffusion of boron from interlayer material into the base material was mechanism of isothermal solidification and bond formation in transient liquid phase bonding of IN 718.

Temperature dependent simulation of diamond depleted Schottky PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.more » The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.« less

Iron and its complexes in silicon

NASA Astrophysics Data System (ADS)

Istratov, A. A.; Hieslmair, H.; Weber, E. R.

This article is the first in a series of two reviews on the properties of iron in silicon. It offers a comprehensive of the current state of understanding of fundamental physical properties of iron and its complexes in silicon. The first section of this review discusses the position of iron in the silicon lattice and the electrical properties of interstitial iron. Updated expressions for the solubility and the diffusivity of iron in silicon are presented, and possible explanations for conflicting experimental data obtained by different groups are discussed. The second section of the article considers the electrical and the structural properties of complexes of interstitial iron with shallow acceptors (boron, aluminum, indium, gallium, and thallium), shallow donors (phosphorus and arsenic) and other impurities (gold, silver, platinum, palladium, zinc, sulfur, oxygen, carbon, and hydrogen). Special attention is paid to the kinetics of iron pairing with shallow acceptors, the dissociation of these pairs, and the metastability of iron-acceptor pairs. The parameters of iron-related defects in silicon are summarized in tables that include more than 30 complexes of iron as detected by electron paramagnetic resonance (EPR) and almost 20 energy levels in the band gap associated with iron. The data presented in this review illustrate the enormous complexing activity of iron, which is attributed to the partial or complete (depending on the temperature and the conductivity type) ionization of iron as well as the high diffusivity of iron in silicon. It is shown that studies of iron in silicon require exceptional cleanliness of experimental facilities and highly reproducible diffusion and temperature ramping (quenching) procedures. Properties of iron that are not yet completely understood and need further research are outlined.

Boron-copper neutron absorbing material and method of preparation

DOEpatents

Wiencek, Thomas C.; Domagala, Robert F.; Thresh, Henry

1991-01-01

A composite, copper clad neutron absorbing material is comprised of copper powder and boron powder enriched with boron 10. The boron 10 content can reach over 30 percent by volume, permitting a very high level of neutron absorption. The copper clad product is also capable of being reduced to a thickness of 0.05 to 0.06 inches and curved to a radius of 2 to 3 inches, and can resist temperatures of 900.degree. C. A method of preparing the material includes the steps of compacting a boron-copper powder mixture and placing it in a copper cladding, restraining the clad assembly in a steel frame while it is hot rolled at 900.degree. C. with cross rolling, and removing the steel frame and further rolling the clad assembly at 650.degree. C. An additional sheet of copper can be soldered onto the clad assembly so that the finished sheet can be cold formed into curved shapes.

Boron-Filled Hybrid Carbon Nanotubes

PubMed Central

Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

2016-01-01

A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

Multi-Functional BN-BN Composite

NASA Technical Reports Server (NTRS)

Kang, Jin Ho (Inventor); Bryant, Robert G. (Inventor); Park, Cheol (Inventor); Sauti, Godfrey (Inventor); Gibbons, Luke (Inventor); Lowther, Sharon (Inventor); Thibeault, Sheila A. (Inventor); Fay, Catharine C. (Inventor)

2017-01-01

Multifunctional Boron Nitride nanotube-Boron Nitride (BN-BN) nanocomposites for energy transducers, thermal conductors, anti-penetrator/wear resistance coatings, and radiation hardened materials for harsh environments. An all boron-nitride structured BN-BN composite is synthesized. A boron nitride containing precursor is synthesized, then mixed with boron nitride nanotubes (BNNTs) to produce a composite solution which is used to make green bodies of different forms including, for example, fibers, mats, films, and plates. The green bodies are pyrolized to facilitate transformation into BN-BN composite ceramics. The pyrolysis temperature, pressure, atmosphere and time are controlled to produce a desired BN crystalline structure. The wholly BN structured materials exhibit excellent thermal stability, high thermal conductivity, piezoelectricity as well as enhanced toughness, hardness, and radiation shielding properties. By substituting with other elements into the original structure of the nanotubes and/or matrix, new nanocomposites (i.e., BCN, BCSiN ceramics) which possess excellent hardness, tailored photonic bandgap and photoluminescence, result.

Magneto-Resistance in thin film boron carbides

NASA Astrophysics Data System (ADS)

Echeverria, Elena; Luo, Guangfu; Liu, J.; Mei, Wai-Ning; Pasquale, F. L.; Colon Santanta, J.; Dowben, P. A.; Zhang, Le; Kelber, J. A.

2013-03-01

Chromium doped semiconducting boron carbide devices were fabricated based on a carborane icosahedra (B10C2H12) precursor via plasma enhanced chemical vapor deposition, and the transition metal atoms found to dope pairwise on adjacent icosahedra site locations. Models spin-polarized electronic structure calculations of the doped semiconducting boron carbides indicate that some transition metal (such as Cr) doped semiconducting boron carbides may act as excellent spin filters when used as the dielectric barrier in a magnetic tunnel junction structure. In the case of chromium doping, there may be considerable enhancements in the magneto-resistance of the heterostructure. To this end, current to voltage curves and magneto-transport measurements were performed in various semiconducting boron carbide both in and out plane. The I-V curves as a function of external magnetic field exhibit strong magnetoresistive effects which are enhanced at liquid Nitrogen temperatures. The mechanism for these effects will be discussed in the context of theoretical calculations.

Present knowledge of electronic properties and charge transport of icosahedral boron-rich solids

NASA Astrophysics Data System (ADS)

Werheit, Helmut

2009-06-01

B12 icosahedra or related structure elements determine the different modifications of elementary boron and numerous boron-rich compounds from α-rhombohedral boron with 12 to YB66 type with about 1584 atoms per unit cell. Typical are well-defined high density intrinsic defects: Jahn-Teller distorted icosahedra, vacancies, incomplete occupancies, statistical occupancies and antisite defects. The correlation between intrinsic point defects and electron deficiencies solves the discrepancy between theoretically predicted metal and experimentally proved semiconducting character. The electron deficiencies generate split-off valence states, which are decisive for the electronic transport, a superposition of band-type and hopping-type conduction. Their share depends on actual conditions like temperature or pre-excitation. The theoretical model of bipolaron hopping is incompatible with numerous experiments. Technical application of the typically p-type icosahedral boron-rich solids requires suitable n-type counterparts; doping and other possibilities are discussed.

Detection of ESBL among ampc producing enterobacteriaceae using inhibitor-based method

PubMed Central

Bakthavatchalu, Sasirekha; Shakthivel, Uma; Mishra, Tannu

2013-01-01

Introduction The occurrence of multiple β-lactamases among bacteria only limits the therapeutic options but also poses a challenge. A study using boronic acid (BA), an AmpC enzyme inhibitor, was designed to detect the combined expression of AmpC β-lactamases and extended-spectrum β-lactamases (ESBLs) in bacterial isolates further different phenotypic methods are compared to detect ESBL and AmpC. Methods A total of 259 clinical isolates of Enterobacteriaceae were isolated and screened for ESBL production by (i) CLSI double-disk diffusion method (ii) cefepime- clavulanic acid method (iii) boronic disk potentiation method. AmpC production was detected using cefoxitin alone and in combination with boronic acid and confirmation was done by three dimensional disk methods. Isolates were also subjected to detailed antibiotic susceptibility test. Results Among 259 isolates, 20.46% were coproducers of ESBL and AmpC, 26.45% were ESBL and 5.40% were AmpC. All of the 53 AmpC and ESBL coproducers were accurately detected by boronic acid disk potentiation method. Conclusion The BA disk test using Clinical and Laboratory Standards Institute methodology is simple and very efficient method that accurately detects the isolates that harbor both AmpCs and ESBLs. PMID:23504148

Thermal conduction mechanisms in isotope-disordered boron nitride and carbon nanotubes

NASA Astrophysics Data System (ADS)

Savic, Ivana; Mingo, Natalio; Stewart, Derek

2009-03-01

We present first principles studies which determine dominant effects limiting the heat conduction in isotope-disordered boron nitride and carbon nanotubes [1]. Using an ab initio atomistic Green's function approach, we demonstrate that localization cannot be observed in the thermal conductivity measurements [1], and that diffusive scattering is the dominant mechanism which reduces the thermal conductivity [2]. We also give concrete predictions of the magnitude of the isotope effect on the thermal conductivities of carbon and boron nitride single-walled nanotubes [2]. We furthermore show that intershell scattering is not the main limiting mechanism for the heat flow through multi-walled boron nitride nanotubes [1], and that heat conduction restricted to a few shells leads to the low thermal conductivities experimentally measured [1]. We consequently successfully compare the results of our calculations [3] with the experimental measurements [1]. [1] C. W. Chang, A. M. Fennimore, A. Afanasiev, D. Okawa, T. Ikuno, H. Garcia, D. Li, A. Majumdar, A. Zettl, Phys. Rev. Lett. 2006, 97, 085901. [2] I. Savic, N. Mingo, D. A. Stewart, Phys. Rev. Lett. 2008, 101, 165502. [3] I. Savic, D. A. Stewart, N. Mingo, to be published.

Development of nanosensors in nuclear technology

NASA Astrophysics Data System (ADS)

Hassan, Thamir A. A.

2017-01-01

Selectivity, sensitivity, and stability (three S parameters) are developed as a new range of sensor this provided instruments for harsh, radioactive waste polluted environment monitoring. Isotope effect is very effective for nuclear radiation sensors preparation.in this presentation are reviewed of the development of Nanosensors in nuclear technology, such as high temperature boron and its compounds with suitable physical and chemical features as sensitive element for temperature and nuclear sensor, Boron isotopes based semiconductor nanosensors and studies of the mechanism of the removal uranium from radioactive wastewater with graphene oxide (GO).

Super-hard cubic BN layer formation by nitrogen ion implantation

NASA Astrophysics Data System (ADS)

Komarov, F. F.; Pilko, V. V.; Yakushev, V. A.; Tishkov, V. S.

1994-11-01

Microcrystalline and amorphous boron thin films were implanted with nitrogen ions at energies from 25 to 125 keV and with doses from 2 × 10 17 to 1 × 10 18 at.cm 2 at temperatures below 200°C. The structure of boron nitride phases after ion implantation, formation of phases and phase transformations were investigated by TEM and TED methods. The cubic boron nitride phase is revealed. The microhardness of the formed films was satisfactorily explained in terms of chemical compound formation by polyenergetic ion implantation. The influence of the copper impurity on the formation of the cubic boron nitride phase is demonstrated. It has also been shown that low concentrations of copper promote cubic BN boundary formation.

Atomic layer deposition of boron-containing films using B{sub 2}F{sub 4}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mane, Anil U., E-mail: amane@anl.gov; Elam, Jeffrey W.; Goldberg, Alexander

2016-01-15

Ultrathin and conformal boron-containing atomic layer deposition (ALD) films could be used as a shallow dopant source for advanced transistor structures in microelectronics manufacturing. With this application in mind, diboron tetrafluoride (B{sub 2}F{sub 4}) was explored as an ALD precursor for the deposition of boron containing films. Density functional theory simulations for nucleation on silicon (100) surfaces indicated better reactivity of B{sub 2}F{sub 4} in comparison to BF{sub 3}. Quartz crystal microbalance experiments exhibited growth using either B{sub 2}F{sub 4}-H{sub 2}O for B{sub 2}O{sub 3} ALD, or B{sub 2}F{sub 4}-disilane (Si{sub 2}H{sub 6}) for B ALD, but in both cases,more » the initial growth per cycle was quite low (≤0.2 Å/cycle) and decreased to near zero growth after 8–30 ALD cycles. However, alternating between B{sub 2}F{sub 4}-H{sub 2}O and trimethyl aluminum (TMA)-H{sub 2}O ALD cycles resulted in sustained growth at ∼0.65 Å/cycle, suggesting that the dense –OH surface termination produced by the TMA-H{sub 2}O combination enhances the uptake of B{sub 2}F{sub 4} precursor. The resultant boron containing films were analyzed for composition by x-ray photoelectron spectroscopy, and capacitance measurements indicated an insulating characteristic. Finally, diffused boron profiles less than 100 Å were obtained after rapid thermal anneal of the boron containing ALD film.« less

Characterization of Thermal, Mechanical and Tribological Properties of Fluoropolymer Composite Coatings

NASA Astrophysics Data System (ADS)

He, Y.; Farokhzadeh, K.; Edrisy, A.

2017-04-01

Perfluoroalkoxy (PFA) is a potential polymer coating material for low-temperature waste heat recovery in heat exchangers. Nonetheless, poor thermal conductivity, low strength and susceptibility to surface degradation by erosion/wear pose restrictions in its application. In this study, four types of fillers, namely graphite, silicon carbide, alumina and boron nitride, were introduced to enhance the thermal, mechanical and tribological properties in PFA coatings. The thermal diffusivity and specific heat capacity of the composites (reinforced with 20 wt.% filler) were also measured using laser flash and differential scanning calorimetry techniques, respectively. The results indicated that the addition of graphite or boron nitride increased the thermal conductivity of PFA by at least 2.8 orders of magnitude, while the composites with the same weight fraction of alumina or silicon carbide showed 20-80% rise in thermal conductivity. The micromechanical deformation and tribological behavior of composite coatings, electrostatically sprayed on steel substrates, were investigated by means of instrumented indentation and scratch tests. The deformation response and friction characteristics were investigated, and the failure mechanisms were identified. Surface hardness, roughness and structure of fillers influenced the sliding performance of the composite coatings. PFA coatings filled with Al2O3 or SiC particles showed high load-bearing capacity under sliding conditions. Conversely, BN- and graphite-filled PFA coatings exhibited lower interfacial adhesion to steel substrate and were prone to failure at relatively lower applied loads.

Synthesis of boron suboxide from boron and boric acid under mild pressure and temperature conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiao, Xiaopeng; Jin, Hua; Ding, Zhanhui

2011-05-15

Graphical abstract: Well-crystallized and icosahedral B{sub 6}O crystals were prepared by reacting boron and boric acid at milder reaction conditions (1 GPa and 1300 {sup o}C for 2 h) as compared to previous work.. Research highlights: {yields} Well-crystallized icosahedral B{sub 6}O was synthesized by reacting boric acid and boron. {yields} The synthesis conditions (1 GPa and 1300 {sup o}C for 2 h) are milder in comparison with previous work. {yields} The more practical synthesis method may make B{sub 6}O as a potential substitute for diamond in industry. -- Abstract: Boron suboxide (B{sub 6}O) was synthesized by reacting boron and boricmore » acid (H{sub 3}BO{sub 3}) at pressures between 1 and 10 GPa, and at temperatures between 1300 and 1400 {sup o}C. The B{sub 6}O samples prepared were icosahedral with diameters ranging from 20 to 300 nm. Well-crystallized and icosahedral crystals with an average size of {approx}100 nm can be obtained at milder reaction conditions (1 GPa and 1300 {sup o}C for 2 h) as compared to previous work. The bulk B{sub 6}O sample was stable in air at 600 {sup o}C and then slowly oxidized up to 1000 {sup o}C. The relatively mild synthetic conditions developed in this study provide a more practical synthesis of B{sub 6}O, which may potentially be used as a substitute for diamond in industry as a new superhard material.« less

Boron doped diamond synthesized from detonation nanodiamond in a C-O-H fluid at high pressure and high temperature

NASA Astrophysics Data System (ADS)

Shakhov, Fedor M.; Abyzov, Andrey M.; Takai, Kazuyuki

2017-12-01

Boron doped diamond (BDD) was synthesized under high pressure and high temperature (HPHT) of 7 GPa, 1230 °C in a short time of 10 s from a powder mixtures of detonation nanodiamond (DND), pentaerythritol C5H8(OH)4 and amorphous boron. SEM, TEM, XRD, XPS, FTIR and Raman spectroscopy indicated that BDD nano- and micro-crystals have formed by consolidation of DND particles (4 nm in size). XRD showed the enlargement of crystallites size to 6-80 nm and the increase in diamond lattice parameter by 0.02-0.07% without appearance of any microstrains. Raman spectroscopy was used to estimate the content of boron atoms embedded in the diamond lattice. It was found that the Raman diamond peak shifts significantly from 1332 cm-1 to 1290 cm-1 without appearance of any non-diamond carbon. The correlation between Raman peak position, its width, and boron content in diamond is proposed. Hydrogenated diamond carbon in significant amount was detected by IR spectroscopy and XPS. Due to the doping with boron content of about 0.1 at%, the electrical conductivity of the diamond achieved approximately 0.2 Ω-1 cm-1. Reaction mechanism of diamond growth (models of recrystallization and oriented attachment) is discussed, including the initial stages of pentaerythritol pyrolysis and thermal desorption of functional groups from the surface of DND particles with the generation of supercritical fluid of low-molecular substances (H2O, CH4, CO, CO2, etc.), as well as byproducts formation (B2O3, B4C).

Effect of boron addition on injection molded 316L stainless steel: mechanical, corrosion properties and in vitro bioactivity.

PubMed

Bayraktaroglu, Esra; Gulsoy, H Ozkan; Gulsoy, Nagihan; Er, Ozay; Kilic, Hasan

2012-01-01

The research was investigated the effect of boron additions on sintering characteristics, mechanical, corrosion properties and biocompatibility of injection molded austenitic grade 316L stainless steel. Addition of boron is promoted to get high density of sintered 316L stainless steels. The amount of boron plays a role in determining the sintered microstructure and all properties. In this study, 316L stainless steel powders have been used with the elemental NiB powders. A feedstock containing 62.5 wt% powders loading was molded at different injection molded temperature. The binders were completely removed from molded components by solvent and thermal debinding at different temperature. The debinded samples were sintered at different temperature for 60 min. Mechanical property, microstructural characterization and electrochemical property of the sintered samples were performed using tensile testing, hardness, optical, scanning electron microscopy and electrochemical corrosion experiments. Sintered samples were immersed in a simulated body fluid (SBF) with elemental concentrations that were comparable to those of human blood plasma for a total period of 15 days. Both materials were implanted in fibroblast culture for biocompatibility evaluations were carried out. Results of study showed that sintered 316L and 316L with NiB addition samples exhibited high mechanical and corrosion properties in a physiological environment. Especially, 316L with NiB addition can be used in some bioapplications.

Evaluation, construction and endurance testing of compression sealed pyrolytic boron nitride slot insulation

NASA Technical Reports Server (NTRS)

Grant, W. L.

1969-01-01

A high-temperature statorette, consisting of an iron-27 percent cobalt magnetic lamination stack and nickel-clad silver conductors, was tested with pyrolytic boron nitride slot insulation. Temperatures were measured in each test to determine characteristics of slot linear heat conductance from statorette conductors. Testing was carried out to temperatures of approximately 1500 F in a vacuum environment of 10-8 torr. Three assemblies were built and tested, each having a different room temperature slot clearance. The final statorette assembly was subjected to a 100-hour vacuum aging test at 1400 F followed by 25 thermal cycles. Temperature data from the three assemblies showed that decreasing slot clearance and increasing compression loading did enhance heat transfer. The temperature difference between slot and lamination at 1400 F increased 4 F during the thermal aging and an additional 10 F during the 25 thermal cycles.

Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

NASA Astrophysics Data System (ADS)

Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

2018-01-01

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

The structure and properties of boron carbide ceramics modified by high-current pulsed electron-beam

NASA Astrophysics Data System (ADS)

Ivanov, Yuri; Tolkachev, Oleg; Petyukevich, Maria; Teresov, Anton; Ivanova, Olga; Ikonnikova, Irina; Polisadova, Valentina

2016-01-01

The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm2, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electron beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surface layer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardness and crack resistance. Research results show that the melting and subsequent rapid solidification of the surface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance.

Fabrication and characterization of poly (bisphenol A borate) with high thermal stability

NASA Astrophysics Data System (ADS)

Wang, Shujuan; Wang, Xiao; Jia, Beibei; Jing, Xinli

2017-01-01

In this work, poly (bisphenol A borate) (PBAB), which has excellent thermal resistance and a high char yield, was synthesized via a convenient A2 + B3 strategy by using bisphenol A (BPA) and boric acid (BA). The chemical reaction between BPA and BA and the chemical structure of PBAB were investigated. The results demonstrate that PBAB consists of aromatic, Ph-O-B and B-O-B structures, as well as a small number of boron hydroxyl groups and phenolic hydroxyl groups. The thermal properties of PBAB were studied by DMA and TGA. The results indicate that the glass transition temperature and char yield are gradually enhanced by increasing the boron content, where the char yield of PBAB at 800 °C in nitrogen (N2) reaches up to 71.3%. It is of particular importance that PBAB show excellent thermal resistance in N2 and air atmospheres. By analysing the pyrolysis of PBAB, the high char yield of PBAB can be attributed to the formation of boron oxide and boron carbide at high temperatures, which reduced the release of volatile carbon dioxide and improved the thermal stability of the carbonization products. This study provides a new perspective on the design of novel boron-containing polymers and possesses significant potential for the improvement of the comprehensive performance of thermosetting resins to broaden their applicability in the field of advanced composites.

Recent advancements in 2D-materials interface based magnetic junctions for spintronics

NASA Astrophysics Data System (ADS)

Iqbal, Muhammad Zahir; Qureshi, Nabeel Anwar; Hussain, Ghulam

2018-07-01

Two-dimensional (2D) materials comprising of graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs) have revealed fascinating properties in various spintronic architectures. Here, we review spin valve effect in lateral and vertical magnetic junctions incorporating 2D materials as non-magnetic layer between ferromagnetic (FM) electrodes. The magnetic field dependent spin transport properties are studied by measuring non-local resistance (RNL) and relative magnetoresistance ratio (MR) for lateral and vertical structures, respectively. The review consists of (i) studying spin lifetimes and spin diffusion length thereby exploring the effect of tunneling and transparent contacts in lateral spin valve structures, temperature dependence, gate tunability and contrasting mechanisms of spin relaxation in single layer graphene (SLG) and bilayer graphene (BLG) devices. (ii) Perpendicular spin valve devices are thoroughly investigated thereby studying the role of different 2D materials in vertical spin dynamics. The dependence of spin valve signal on interface quality, temperature and various other parameters is also investigated. Furthermore, the spin reversal in graphene-hBN hybrid system is examined on the basis of Julliere model.

Enhancement of thermal conductive pathway of boron nitride coated polymethylsilsesquioxane composite.

PubMed

Kim, Gyungbok; Ryu, Seung Han; Lee, Jun-Tae; Seong, Ki-Hun; Lee, Jae Eun; Yoon, Phil-Joong; Kim, Bum-Sung; Hussain, Manwar; Choa, Yong-Ho

2013-11-01

We report here in the fabrication of enhanced thermal conductive pathway nanocomposites of boron nitride (BN)-coated polymethylsilsesquioxane (PMSQ) composite beads using isopropyl alcohol (IPA) as a mixing medium. Exfoliated and size-reduced boron nitride particles were successfully coated on the PMSQ beads and explained by surface charge differences. A homogeneous dispersion and coating of BN on the PMSQ beads using IPA medium was confirmed by SEM. Each condition of the composite powder was carried into the stainless still mould and then hot pressed in an electrically heated hot press machine. Three-dimensional percolation networks and conductive pathways created by exfoliated BN were precisely formed in the nanocomposites. The thermal conductivity of nanocomposites was measured by multiplying specific gravity, specific heat, and thermal diffusivity, based upon the laser flash method. Densification of the composite resulted in better thermal properties. For an epoxy reinforced composite with 30 vol% BN and PMSQ, a thermal conductivity of nine times higher than that of pristine PMSQ was observed.

Interface formation in monolayer graphene-boron nitride heterostructures.

PubMed

Sutter, P; Cortes, R; Lahiri, J; Sutter, E

2012-09-12

The ability to control the formation of interfaces between different materials has become one of the foundations of modern materials science. With the advent of two-dimensional (2D) crystals, low-dimensional equivalents of conventional interfaces can be envisioned: line boundaries separating different materials integrated in a single 2D sheet. Graphene and hexagonal boron nitride offer an attractive system from which to build such 2D heterostructures. They are isostructural, nearly lattice-matched, and isoelectronic, yet their different band structures promise interesting functional properties arising from their integration. Here, we use a combination of in situ microscopy techniques to study the growth and interface formation of monolayer graphene-boron nitride heterostructures on ruthenium. In a sequential chemical vapor deposition process, boron nitride grows preferentially at the edges of existing monolayer graphene domains, which can be exploited for synthesizing continuous 2D membranes of graphene embedded in boron nitride. High-temperature growth leads to intermixing near the interface, similar to interfacial alloying in conventional heterostructures. Using real-time microscopy, we identify processes that eliminate this intermixing and thus pave the way to graphene-boron nitride heterostructures with atomically sharp interfaces.

Disorder and defects are not intrinsic to boron carbide

NASA Astrophysics Data System (ADS)

Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander

2016-01-01

A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichiometric boron-carbide B13C2 by high-pressure-high-temperature techniques. Our experimental electron-density study using high-resolution single-crystal synchrotron X-ray diffraction data conclusively demonstrates that disorder and defects are not intrinsic to boron carbide, contrary to what was hitherto supposed. A detailed analysis of the electron density distribution reveals charge transfer between structural units in B13C2 and a new type of electron-deficient bond with formally unpaired electrons on the C-B-C group in B13C2. Unprecedented bonding features contribute to the fundamental chemistry and materials science of boron compounds that is of great interest for understanding structure-property relationships and development of novel functional materials.

Phonon transport in single-layer boron nanoribbons

NASA Astrophysics Data System (ADS)

Zhang, Zhongwei; Xie, Yuee; Peng, Qing; Chen, Yuanping

2016-11-01

Inspired by the successful synthesis of three two-dimensional (2D) allotropes, the boron sheet has recently been one of the hottest 2D materials around. However, to date, phonon transport properties of these new materials are still unknown. By using the non-equilibrium Green’s function (NEGF) combined with the first principles method, we study ballistic phonon transport in three types of boron sheets; two of them correspond to the structures reported in the experiments, while the third one is a stable structure that has not been synthesized yet. At room temperature, the highest thermal conductance of the boron nanoribbons is comparable with that of graphene, while the lowest thermal conductance is less than half of graphene’s. Compared with graphene, the three boron sheets exhibit diverse anisotropic transport characteristics. With an analysis of phonon dispersion, bonding charge density, and simplified models of atomic chains, the mechanisms of the diverse phonon properties are discussed. Moreover, we find that many hybrid patterns based on the boron allotropes can be constructed naturally without doping, adsorption, and defects. This provides abundant nanostructures for thermal management and thermoelectric applications.

New High-Performance SiC Fiber Developed for Ceramic Composites

NASA Technical Reports Server (NTRS)

DiCarlo, James A.; Yun, Hee Mann

2002-01-01

Sylramic-iBN fiber is a new type of small-diameter (10-mm) SiC fiber that was developed at the NASA Glenn Research Center and was recently given an R&D 100 Award for 2001. It is produced by subjecting commercially available Sylramic (Dow Corning, Midland, MI) SiC fibers, fabrics, or preforms to a specially designed high-temperature treatment in a controlled nitrogen environment for a specific time. It can be used in a variety of applications, but it currently has the greatest advantage as a reinforcement for SiC/SiC ceramic composites that are targeted for long-term structural applications at temperatures higher than the capability of metallic superalloys. The commercial Sylramic SiC fiber, which is the precursor for the Sylramic-iBN fiber, is produced by Dow Corning, Midland, Michigan. It is derived from polymers at low temperatures and then pyrolyzed and sintered at high temperatures using boron-containing sintering aids (ref. 1). The sintering process results in very strong fibers (>3 GPa) that are dense, oxygen-free, and nearly stoichiometric. They also display an optimum grain size that is beneficial for high tensile strength, good creep resistance, and good thermal conductivity (ref. 2). The NASA-developed treatment allows the excess boron in the bulk to diffuse to the fiber surface where it reacts with nitrogen to form an in situ boron nitride (BN) coating on the fiber surface (thus the product name of Sylramic-iBN fiber). The removal of boron from the fiber bulk allows the retention of high tensile strength while significantly improving creep resistance and electrical conductivity, and probably thermal conductivity since the grains are slightly larger and the grain boundaries cleaner (ref. 2). Also, as shown in the graph, these improvements allow the fiber to display the best rupture strength at high temperatures in air for any available SiC fiber. In addition, for CMC applications under oxidizing conditions, the formation of an in situ BN surface layer creates a more environmentally durable fiber surface not only because a more oxidation-resistant BN is formed, but also because this layer provides a physical barrier between contacting fibers with oxidation-prone SiC surface layers (refs. 3 and 4). This year, Glenn demonstrated that the in situ BN treatment can be applied simply to Sylramic fibers located within continuous multifiber tows, within woven fabric pieces, or even assembled into complex product shapes (preforms). SiC/SiC ceramic composite panels have been fabricated from Sylramic-iBN fabric and then tested at Glenn within the Ultra-Efficient Engine Technology Program. The test conditions were selected to simulate those experienced by hot-section components in advanced gas turbine engines. The results from testing at Glenn demonstrate all the benefits expected for the Sylramic-iBN fibers. That is, the composites displayed the best thermostructural performance in comparison to composites reinforced by Sylramic fibers and by all other currently available high-performance SiC fiber types (refs. 3 and 5). For these reasons, the Ultra-Efficient Engine Technology Program has selected the Sylramic-iBN fiber for ongoing efforts aimed at SiC/SiC engine component development.

Superhigh moduli and tension-induced phase transition of monolayer gamma-boron at finite temperatures.

PubMed

Zhao, Junhua; Yang, Zhaoyao; Wei, Ning; Kou, Liangzhi

2016-03-16

Two dimensional (2D) gamma-boron (γ-B28) thin films have been firstly reported by the experiments of the chemical vapor deposition in the latest study. However, their mechanical properties are still not clear. Here we predict the superhigh moduli (785 ± 42 GPa at 300 K) and the tension-induced phase transition of monolayer γ-B28 along a zigzag direction for large deformations at finite temperatures using molecular dynamics (MD) simulations. The new phase can be kept stable after unloading process at these temperatures. The predicted mechanical properties are reasonable when compared with our results from density functional theory. This study provides physical insights into the origins of the new phase transition of monolayer γ-B28 at finite temperatures.

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Chao; Dong, Peng; Yi, Jun

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extendedmore » B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.« less

Chemical vapor deposition of W-Si-N and W-B-N

DOEpatents

Fleming, James G.; Roherty-Osmun, Elizabeth Lynn; Smith, Paul M.; Custer, Jonathan S.; Jones, Ronald V.; Nicolet, Marc-A.; Madar, Roland; Bernard, Claude

1999-01-01

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

Production and Characterization of Bulk MgB2 Material made by the Combination of Crystalline and Carbon Coated Amorphous Boron Powders

NASA Astrophysics Data System (ADS)

Hiroki, K.; Muralidhar, M.; Koblischka, M. R.; Murakami, M.

2017-07-01

The object of this investigation is to reduce the cost of bulk production and in the same time to increase the critical current performance of bulk MgB2 material. High-purity commercial powders of Mg metal (99.9% purity) and two types of crystalline (99% purity) and 16.5 wt% carbon-coated, nanometer-sized amorphous boron powders (98.5% purity) were mixed in a nominal composition of MgB2 to reduce the boron cost and to see the effect on the superconducting and magnetic properties. Several samples were produced mixing the crystalline boron and carbon-coated, nanometer-sized amorphous boron powders in varying ratios (50:50, 60:40, 70:30, 80:20, 90:10) and synthesized using a single-step process using the solid state reaction around 800 °C for 3 h in pure argon atmosphere. The magnetization measurements exhibited a sharp superconducting transition temperature with T c, onset around 38.6 K to 37.2 K for the bulk samples prepared utilizing the mixture of crystalline boron and 16.5% carbon-coated amorphous boron. The critical current density at higher magnetic field was improved with addition of carbon-coated boron to crystalline boron in a ratio of 80:20. The highest self-field Jc around 215,000 A/cm2 and 37,000 A/cm2 were recorded at 20 K, self-field and 2 T for the sample with a ratio of 80:10. The present results clearly demonstrate that the bulk MgB2 performance can be improved by adding carbon-coated nano boron to crystalline boron, which will be attractive to reduce the cost of bulk MgB2 material for several industrial applications.

Macrosegregation of GeSi Alloys Grown in a Static Magnetic Field

NASA Technical Reports Server (NTRS)

Ritter, T. M.; Volz, M. P.; Cobb, S. D.; Szofran, F. R.

1999-01-01

Axial and radial macrosegregation profiles have been determined for GeSi alloy crystals grown by the vertical Bridgman technique. An axial 5 Tesla magnetic field was applied to several samples during growth to decrease the melt velocities by means of the Lorentz force. Compositions were measured with either energy dispersive X-ray spectroscopy (EDS) on a scanning electron microscope (SEM) or by wavelength dispersive X-ray spectroscopy (WDS) on a microprobe. The crystals were processed in graphite, hot-pressed boron nitride (BN), and pyrolytic boron nitride (PBN) ampoules, which produced various solid-liquid interface shapes during solidification. Those samples grown in a graphite ampoule exhibited radial profiles consistent with a highly concave interface and axial profiles indicative of complete mixing in the melt. The samples grown in BN and PBN ampoules had less radial variation. Axial macrosegregation profiles of these samples fell between the predictions for a completely mixed melt and one where solute transport is dominated by diffusion. Possible explanations for the apparent insufficiency of the magnetic field to achieve diffusion controlled growth conditions are discussed.

Boron-Based Hydrogen Storage: Ternary Borides and Beyond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vajo, John J.

DOE continues to seek reversible solid-state hydrogen materials with hydrogen densities of ≥11 wt% and ≥80 g/L that can deliver hydrogen and be recharged at moderate temperatures (≤100 °C) and pressures (≤100 bar) enabling incorporation into hydrogen storage systems suitable for transportation applications. Boron-based hydrogen storage materials have the potential to meet the density requirements given boron’s low atomic weight, high chemical valance, and versatile chemistry. However, the rates of hydrogen exchange in boron-based compounds are thus far much too slow for practical applications. Although contributing to the high hydrogen densities, the high valance of boron also leads to slowmore » rates of hydrogen exchange due to extensive boron-boron atom rearrangements during hydrogen cycling. This rearrangement often leads to multiple solid phases occurring over hydrogen release and recharge cycles. These phases must nucleate and react with each other across solid-solid phase boundaries leading to energy barriers that slow the rates of hydrogen exchange. This project sought to overcome the slow rates of hydrogen exchange in boron-based hydrogen storage materials by minimizing the number of solid phases and the boron atom rearrangement over a hydrogen release and recharge cycle. Two novel approaches were explored: 1) developing matched pairs of ternary borides and mixed-metal borohydrides that could exchange hydrogen with only one hydrogenated phase (the mixed-metal borohydride) and only one dehydrogenated phase (the ternary boride); and 2) developing boranes that could release hydrogen by being lithiated using lithium hydride with no boron-boron atom rearrangement.« less

Solid state, thermal synthesis of site-specific protein-boron cluster conjugates and their physicochemical and biochemical properties.

PubMed

Goszczyński, Tomasz M; Kowalski, Konrad; Leśnikowski, Zbigniew J; Boratyński, Janusz

2015-02-01

Boron clusters represent a vast family of boron-rich compounds with extraordinary properties that provide the opportunity of exploitation in different areas of chemistry and biology. In addition, boron clusters are clinically used in boron neutron capture therapy (BNCT) of tumors. In this paper, a novel, in solid state (solvent free), thermal method for protein modification with boron clusters has been proposed. The method is based on a cyclic ether ring opening in oxonium adduct of cyclic ether and a boron cluster with nucleophilic centers of the protein. Lysozyme was used as the model protein, and the physicochemical and biological properties of the obtained conjugates were characterized. The main residues of modification were identified as arginine-128 and threonine-51. No significant changes in the secondary or tertiary structures of the protein after tethering of the boron cluster were found using mass spectrometry and circular dichroism measurements. However, some changes in the intermolecular interactions and hydrodynamic and catalytic properties were observed. To the best of our knowledge, we have described the first example of an application of cyclic ether ring opening in the oxonium adducts of a boron cluster for protein modification. In addition, a distinctive feature of the proposed approach is performing the reaction in solid state and at elevated temperature. The proposed methodology provides a new route to protein modification with boron clusters and extends the range of innovative molecules available for biological and medical testing. Copyright © 2014 Elsevier B.V. All rights reserved.

Titanium reinforced boron-polyimide composite

NASA Technical Reports Server (NTRS)

Clark, G. A.; Clayton, K. I.

1969-01-01

Processing techniques for boron polyimide prepreg were developed whereby composites could be molded under vacuum bag pressure only. A post-cure cycle was developed which resulted in no loss in room temperature mechanical properties of the composite at any time during up to 16 hours at 650 F. A design utilizing laminated titanium foil was developed to achieve a smooth transition of load from the titanium attachment points into the boron-reinforced body of the structure. The box beam test article was subjected to combined bending and torsional loads while exposed to 650 F. Loads were applied incrementally until failure occurred at 83% design limit load.

Boron carbide nanowires: Synthesis and characterization

NASA Astrophysics Data System (ADS)

Guan, Zhe

Bulk boron carbide has been widely used in ballistic armored vest and the property characterization has been heavily focused on mechanical properties. Even though boron carbides have also been projected as a promising class of high temperature thermoelectric materials for energy harvesting, the research has been limited in this field. Since the thermal conductivity of bulk boron carbide is still relatively high, there is a great opportunity to take advantage of the nano effect to further reduce it for better thermoelectric performance. This dissertation work aims to explore whether improved thermoelectric performance can be found in boron carbide nanowires compared with their bulk counterparts. This dissertation work consists of four main parts. (1) Synthesis of boron carbide nanowires. Boron carbide nanowires were synthesized by co-pyrolysis of diborane and methane at low temperatures (with 879 °C as the lowest) in a home-built low pressure chemical vapor deposition (LPCVD) system. The CVD-based method is energy efficient and cost effective. The as-synthesized nanowires were characterized by electron microscopy extensively. The transmission electron microscopy (TEM) results show the nanowires are single crystalline with planar defects. Depending on the geometrical relationship between the preferred growth direction of the nanowire and the orientation of the defects, the as-synthesized nanowires could be further divided into two categories: transverse fault (TF) nanowires grow normal to the defect plane, while axial fault (AF) ones grow within the defect plane. (2) Understanding the growth mechanism of as-synthesized boron carbide nanowires. The growth mechanism can be generally considered as the famous vapor-liquid-solid (VLS) mechanism. TF and AF nanowires were found to be guided by Ni-B catalysts of two phases. A TF nanowire is lead by a hexagonal phase catalyst, which was proved to be in a liquid state during reaction. While an AF nanowires is catalyzed by a solid orthorhombic phase catalyst. The status of a catalyst depends mainly on temperature. (3) Observation of "invisible" defects in boron carbide nanowires. The planar defects can only be seen under a transmission electron microscope when the electron beam is within the defect plane. Furthermore, there are only two directions within that plane, along which the orientation of defect can be told and clear TEM results can be taken. The challenge is that the TEM sample holder is limited to tilt +/-30° in each direction. A theory was developed based on lattice calculation and simulation to tell the orientation of defect even not from those unique directions. Furthermore, it was tested by experimental data and proved to be successful. (4) Preliminary exploration of structure-transport property of as-synthesized boron carbide nanowires. In collaboration with experts in the field of thermal science, thermal transport properties of a few boron carbide nanowires were studied. All measured nanowires were either pre-characterized or post-characterized by TEM to reveal their structural information such as diameter, fault orientations and chemical composition. The obtained structural information was then analyzed together with measured thermal conductivity to establish a structure-transport property relation. Current data indicate that TF ones have a lower thermal conductivity, which is also diameter-dependent.

Plasma enhanced chemical vapor deposition of metalboride interfacial layers as diffusion barriers for nanostructured diamond growth on cobalt containing alloys CoCrMo and WC-Co

NASA Astrophysics Data System (ADS)

Johnston, Jamin M.

This work is a compilation of theory, finite element modeling and experimental research related to the use of microwave plasma enhanced chemical vapor deposition (MPECVD) of diborane to create metal-boride surface coatings on CoCrMo and WC-Co, including the subsequent growth of nanostructured diamond (NSD). Motivation for this research stems from the need for wear resistant coatings on industrial materials, which require improved wear resistance and product lifetime to remain competitive and satisfy growing demand. Nanostructured diamond coatings are a promising solution to material wear but cannot be directly applied to cobalt containing substrates due to graphite nucleation. Unfortunately, conventional pre-treatment methods, such as acid etching, render the substrate too brittle. Thus, the use of boron in a MPECVD process is explored to create robust interlayers which inhibit carbon-cobalt interaction. Furthermore, modeling of the MPECVD process, through the COMSOL MultiphysicsRTM platform, is performed to provide insight into plasma-surface interactions using the simulation of a real-world apparatus. Experimental investigation of MPECVD boriding and NSD deposition was conducted at surface temperatures from 700 to 1100 °C. Several well-adhered metal-boride surface layers were formed: consisting of CoB, CrB, WCoB, CoB and/or W2CoB2. Many of the interlayers were shown to be effective diffusion barriers against elemental cobalt for improving nucleation and adhesion of NSD coatings; diamond on W2CoB2 was well adhered. However, predominantly WCoB and CoB phase interlayers suffered from diamond film delamination. Metal-boride and NSD surfaces were evaluated using glancing-angle x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), cross-sectional scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), micro-Raman spectroscopy, nanoindentation, scratch testing and epoxy pull testing. COMSOL MultiphysicsRTM was used to construct a representation of the MPECVD chamber. Relevant material properties, boundary conditions and adjustable parameters were applied to match the actual experimental set-up. Despite approximations, simulations for the surface temperature and surface accumulation matched well with experimental data. The combination of data from CoCrMo, WC-Co and modeling of the MPECVD process confirms that the use of boron to create metal-boride interlayers is applicable for subsequent nanostructured diamond coatings and that the surface temperature and deposition thickness can be predicted using finite element modeling.

Dynamic Modulus and Damping of Boron, Silicon Carbide, and Alumina Fibers

NASA Technical Reports Server (NTRS)

Dicarlo, J. A.; Williams, W.

1980-01-01

The dynamic modulus and damping capacity for boron, silicon carbide, and silicon carbide coated boron fibers were measured from-190 to 800 C. The single fiber vibration test also allowed measurement of transverse thermal conductivity for the silicon carbide fibers. Temperature dependent damping capacity data for alumina fibers were calculated from axial damping results for alumina-aluminum composites. The dynamics fiber data indicate essentially elastic behavior for both the silicon carbide and alumina fibers. In contrast, the boron based fibers are strongly anelastic, displaying frequency dependent moduli and very high microstructural damping. Ths single fiber damping results were compared with composite damping data in order to investigate the practical and basic effects of employing the four fiber types as reinforcement for aluminum and titanium matrices.

Spatial Burnout in Water Reactors with Nonuniform Startup Distributions of Uranium and Boron

NASA Technical Reports Server (NTRS)

Fox, Thomas A.; Bogart, Donald

1955-01-01

Spatial burnout calculations have been made of two types of water moderated cylindrical reactor using boron as a burnable poison to increase reactor life. Specific reactors studied were a version of the Submarine Advanced Reactor (sAR) and a supercritical water reactor (SCW) . Burnout characteristics such as reactivity excursion, neutron-flux and heat-generation distributions, and uranium and boron distributions have been determined for core lives corresponding to a burnup of approximately 7 kilograms of fully enriched uranium. All reactivity calculations have been based on the actual nonuniform distribution of absorbers existing during intervals of core life. Spatial burnout of uranium and boron and spatial build-up of fission products and equilibrium xenon have been- considered. Calculations were performed on the NACA nuclear reactor simulator using two-group diff'usion theory. The following reactor burnout characteristics have been demonstrated: 1. A significantly lower excursion in reactivity during core life may be obtained by nonuniform rather than uniform startup distribution of uranium. Results for SCW with uranium distributed to provide constant radial heat generation and a core life corresponding to a uranium burnup of 7 kilograms indicated a maximum excursion in reactivity of 2.5 percent. This compared to a maximum excursion of 4.2 percent obtained for the same core life when w'anium was uniformly distributed at startup. Boron was incorporated uniformly in these cores at startup. 2. It is possible to approach constant radial heat generation during the life of a cylindrical core by means of startup nonuniform radial and axial distributions of uranium and boron. Results for SCW with nonuniform radial distribution of uranium to provide constant radial heat generation at startup and with boron for longevity indicate relatively small departures from the initially constant radial heat generation distribution during core life. Results for SAR with a sinusoidal distribution rather than uniform axial distributions of boron indicate significant improvements in axial heat generation distribution during the greater part of core life. 3. Uranium investments for cylindrical reactors with nonuniform radial uranium distributions which provide constant radial heat generation per unit core volume are somewhat higher than for reactors with uniform uranium concentration at startup. On the other hand, uranium investments for reactors with axial boron distributions which approach constant axial heat generation are somewhat smaller than for reactors with uniform boron distributions at startup.

Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature

NASA Astrophysics Data System (ADS)

Lv, Meizhe; Xu, Bin; Cai, Lichao; Guo, Xiaofei; Yuan, Xingdong

2018-05-01

After rapid cooling, cubic boron nitride (c-BN) single crystals synthesized under high pressure and high temperature (HPHT) are wrapped in the white film powders which are defined as growth interface. In order to make clear that the transition mechanism of c-BN single crystals, the variation of B and N atomic hybrid states in the growth interface is analyzed with the help of auger electron spectroscopy in the Li-based system. It is found that the sp2 fractions of B and N atoms decreases, and their sp3 fractions increases from the outer to the inner in the growth interface. In addition, Lithium nitride (Li3N) are not found in the growth interface by X-ray diffraction (XRD) experiment. It is suggested that lithium boron nitride (Li3BN2) is produced by the reaction of hexagonal boron nitride (h-BN) and Li3N at the first step, and then B and N atoms transform from sp2 into sp3 state with the catalysis of Li3BN2 in c-BN single crystals synthesis process.

Carbon or boron modified titanium silicide

DOEpatents

Thom, A.J.; Akinc, M.

1998-07-14

A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

Carbon or boron modified titanium silicide

DOEpatents

Thom, A.J.; Akinc, M.

1997-12-02

A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

Carbon or boron modified titanium silicide

DOEpatents

Thom, Andrew J.; Akinc, Mufit

1996-12-03

A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

Carbon or boron modified titanium silicide

DOEpatents

Thom, Andrew J.; Akinc, Mufit

1997-12-02

A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

Carbon or boron modified titanium silicide

DOEpatents

Thom, A.J.; Akinc, M.

1996-12-03

A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

Carbon or boron modified titanium silicide

DOEpatents

Thom, Andrew J.; Akinc, Mufit

1998-07-14

A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications.

PubMed

Kang, Joon Sang; Wu, Huan; Hu, Yongjie

2017-12-13

Heat dissipation is an increasingly critical technological challenge in modern electronics and photonics as devices continue to shrink to the nanoscale. To address this challenge, high thermal conductivity materials that can efficiently dissipate heat from hot spots and improve device performance are urgently needed. Boron phosphide is a unique high thermal conductivity and refractory material with exceptional chemical inertness, hardness, and high thermal stability, which holds high promises for many practical applications. So far, however, challenges with boron phosphide synthesis and characterization have hampered the understanding of its fundamental properties and potential applications. Here, we describe a systematic thermal transport study based on a synergistic synthesis-experimental-modeling approach: we have chemically synthesized high-quality boron phosphide single crystals and measured their thermal conductivity as a record-high 460 W/mK at room temperature. Through nanoscale ballistic transport, we have, for the first time, mapped the phonon spectra of boron phosphide and experimentally measured its phonon mean free-path spectra with consideration of both natural and isotope-pure abundances. We have also measured the temperature- and size-dependent thermal conductivity and performed corresponding calculations by solving the three-dimensional and spectral-dependent phonon Boltzmann transport equation using the variance-reduced Monte Carlo method. The experimental results are in good agreement with that predicted by multiscale simulations and density functional theory, which together quantify the heat conduction through the phonon mode dependent scattering process. Our finding underscores the promise of boron phosphide as a high thermal conductivity material for a wide range of applications, including thermal management and energy regulation, and provides a detailed, microscopic-level understanding of the phonon spectra and thermal transport mechanisms of boron phosphide. The present study paves the way toward the establishment of a new framework, based on the phonon spectra-material structure relationship, for the rational design of high thermal conductivity materials and nano- to multiscale devices.

Thermal coatings for titanium-aluminum alloys

NASA Technical Reports Server (NTRS)

Cunnington, George R.; Clark, Ronald K.; Robinson, John C.

1993-01-01

Titanium aluminides and titanium alloys are candidate materials for use in hot structure and heat-shield components of hypersonic vehicles because of their good strength-to-weight characteristics at elevated temperature. However, in order to utilize their maximum temperature capability, they must be coated to resist oxidation and to have a high total remittance. Also, surface catalysis for recombination of dissociated species in the aerodynamic boundary layer must be minimized. Very thin chemical vapor deposition (CVD) coatings are attractive candidates for this application because of durability and very light weight. To demonstrate this concept, coatings of boron-silicon and aluminum-boron-silicon compositions were applied to the titanium-aluminides alpha2 (Ti-14Al-21Nb), super-alpha2 (Ti-14Al-23-Nb-2V), and gamma (Ti-33Al-6Nb-1Ta) and to the titanium alloy beta-21S (Ti-15Mo-3Al-3Nb-0.2Si). Coated specimens of each alloy were subjected to a set of simulated hypersonic vehicle environmental tests to determine their properties of oxidation resistance, surface catalysis, radiative emittance, and thermal shock resistance. Surface catalysis results should be viewed as relative performance only of the several coating-alloy combinations tested under the specific environmental conditions of the LaRC Hypersonic Materials Environmental Test System (HYMETS) arc-plasma-heated hypersonic wind tunnel. Tests were also conducted to evaluate the hydrogen transport properties of the coatings and any effects of the coating processing itself on fatigue life of the base alloys. Results are presented for three types of coatings, which are as follows: (1) a single layer boron silicon coating, (2) a single layer aluminum-boron-silicon coating, and (3) a multilayer coating consisting of an aluminum-boron-silicon sublayer with a boron-silicon outer layer.

Sputtered boron indium oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Stewart, Kevin A.; Gouliouk, Vasily; Keszler, Douglas A.; Wager, John F.

2017-11-01

Boron indium oxide (BIO) is studied for thin-film transistor (TFT) channel layer applications. Sputtered BIO thin films exhibit an amorphous phase over a wide range of B2O3/In2O3 ratios and remain amorphous up to 500 °C. The band gap decreases linearly with decreasing boron content, whereas device performance generally improves with decreasing boron content. The best amorphous BIO TFT exhibits a field-effect mobility of 10 cm2 V-1 s-1, turn-on voltage of 2.5 V, and sub-threshold swing of 0.72 V/dec. Decreasing the boron content to 12.5% leads to a polycrystalline phase, but further increases the mobility up to 20-40 cm2 V-1 s-1. TCAD simulation results suggest that the reason for higher performance after increasing the anneal temperature from 200 to 400 °C is due to a lower defect density in the sub-bandgap region of the BIO channel layer.

Development of Advanced High Strength Steel for Improved Vehicle Safety, Fuel Efficiency and CO2 Emission

NASA Astrophysics Data System (ADS)

Kumar, Satendra; Singhai, Mrigandra; Desai, Rahul; Sam, Srimanta; Patra, Pradip Kumar

2016-10-01

Global warming and green house gas emissions are the major issues worldwide and their impacts are clearly visible as a record high temperatures, rising sea, and severe `flooding and droughts'. Motor vehicles considered as a major contributor on global warming due to its green house gas emissions. Hence, the automobile industries are under tremendous pressure from government and society to reduce green house gas emission to maximum possible extent. In present work, Dual Phase steel with boron as microalloying is manufactured using thermo-mechanical treatment during hot rolling. Dual phase steel with boron microalloying improved strength by near about 200 MPa than dual phase steel without boron. The boron added dual phase steel can be used for manufacturing stronger and a lighter vehicle which is expected to perform positively on green house gas emissions. The corrosion resistance behavior is also improved with boron addition which would further increase the life cycle of the vehicle even under corrosive atmosphere.

Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles

PubMed Central

Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

2016-01-01

A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air. PMID:26831205

Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles.

PubMed

Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

2016-02-02

A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air.

Molecular Simulation Study of Gas Solubility and Diffusion in a Polymer-Boron Nitride Nanotube Composite.

PubMed

Wang, Congyue; Jagirdar, Preeti; Naserifar, Saber; Sahimi, Muhammad

2016-02-25

We study the possibility of using polymer composites made of a polymer and boron nitride nanotubes (BNNTs) as a new type of membranes for gas separation. The polymer used is amorphous poly(ether imide) (PEI), and zigzag BNNTs are used to generate the composites with the PEI. The solubilities and self-diffusivities of CO2 and CH4 in the PEI and its composites with the BNNTs are calculated by molecular dynamics (MD) simulations. The molecular models of the PEI and its composites with the BNNTs are generated using energy minimization and MD simulation, and the Universal Force Field is used to represent the interactions between all the atoms. The morhology of the composites are characterized and are compared with that of PEI. The accuracy of the computations is tested by calculating the gases' solubilities and self-diffsivities in the pure PEI and comparing them with the experimental data. Good agreement is obtained with the data. The computed diffusivities and solubilities in the polymer-BNNTs composites are much larger than those in the pure polymer, which are attributed to the changes that the BNNTs induce in the polymer composite's free-volume distribution. As the mechanical properties of the polymer-BNNTs composites are superior over those of the pure PEI, their use as a membrane for gas separation offers distinct advantages over the pure polymer. We also demonstrate that, calculating the diffusion coefficients with MD simulations in the NPT ensemble, as opposed to the common practice of utilizing the NVT ensemble, leads to much more accurate results.

Synthesis micro-scale boron nitride nanotubes at low substrate temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sajjad, Muhammad, E-mail: msajjadd@gmail.com; Makarov, Vladimir; Morell, Gerardo

2016-07-15

High temperature synthesis methods produce defects in 1D nanomaterials, which ultimately limit their applications. We report here the synthesis of micro-scale boron nitride nanotubes (BNNT) at low substrate temperature (300 {sup o}C) using a pulsed CO{sub 2} laser deposition technique in the presence of catalyst. The electron microscopic analyses have shown the nanotubes distributed randomly on the surface of the substrate. The average diameter (∼0.25 μm) of a nanotube, which is the highest reported value to date, is estimated by SEM data and confirmed by TEM measurements. These nanotubes are promising for high response deep-UV photo-luminescent devices. A detailed synthesismore » mechanism is presented and correlated with the experimental results.« less

Modeling the effect of doping on the catalyst-assisted growth and field emission properties of plasma-grown graphene sheet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Neha; Sharma, Suresh C.; Sharma, Rinku

A theoretical model describing the effect of doping on the plasma-assisted catalytic growth of graphene sheet has been developed. The model accounts the charging rate of the graphene sheet, kinetics of all the plasma species, including the doping species, and the growth rate of graphene nuclei and graphene sheet due to surface diffusion, and accretion of ions on the catalyst nanoparticle. Using the model, it is observed that nitrogen and boron doping can strongly influence the growth and field emission properties of the graphene sheet. The results of the present investigation indicate that nitrogen doping results in reduced thickness andmore » shortened height of the graphene sheet; however, boron doping increases the thickness and height of the graphene sheet. The time evolutions of the charge on the graphene sheet and hydrocarbon number density for nitrogen and boron doped graphene sheet have also been examined. The field emission properties of the graphene sheet have been proposed on the basis of the results obtained. It is concluded that nitrogen doped graphene sheet exhibits better field emission characteristics as compared to undoped and boron doped graphene sheet. The results of the present investigation are consistent with the existing experimental observations.« less

Natural cotton as precursor for the refractory boron carbide—a hydrothermal synthesis and characterization

NASA Astrophysics Data System (ADS)

Saritha Devi, H. V.; Swapna, M. S.; Raj, Vimal; Ambadas, G.; Sankararaman, S.

2018-01-01

Boron carbide (B4C) is an excellent covalent carbide that finds applications in industries and nuclear power plants. The present synthesis methods of boron carbide are expensive and involve the use of toxic chemicals that adversely affect environment. In the present work, we report for the first time the use of the hydrothermal method for converting the cellulose from cotton as the carbon precursor for B4C. The carbon precursor is converted into functionalized porous carbonaceous material by hydrothermal treatment followed by sodium borohydride. It is further treated with boric acid to make it a B4C precursor. The precursor is characterized by UV-visible diffuse reflectance, Raman, Fourier transform infrared, photoluminescent and energy dispersive spectroscopy. The morphology and structure analysis is carried out using field emission scanning electron microscopy and x-ray diffraction techniques. The results of structural and optical characterization of the sample synthesized are compared with the commercial B4C. The thermal stability of the sample is studied by thermogravimetric analysis. The sample annealed at 700 °C is found to be B4C devoid of amorphous carbon with a yield of 44.7%. The analysis reveals the formation of boron carbide from the sample.

High-pressure high-temperature phase diagram of gadolinium studied using a boron-doped heater anvil

NASA Astrophysics Data System (ADS)

Montgomery, J. M.; Samudrala, G. K.; Velisavljevic, N.; Vohra, Y. K.

2016-04-01

A boron-doped designer heater anvil is used in conjunction with powder x-ray diffraction to collect structural information on a sample of quasi-hydrostatically loaded gadolinium metal up to pressures above 8 GPa and 600 K. The heater anvil consists of a natural diamond anvil that has been surface modified with a homoepitaxially grown chemical-vapor-deposited layer of conducting boron-doped diamond, and is used as a DC heating element. Internally insulating both diamond anvils with sapphire support seats allows for heating and cooling of the high-pressure area on the order of a few tens of seconds. This device is then used to scan the phase diagram of the sample by oscillating the temperature while continuously increasing the externally applied pressure and collecting in situ time-resolved powder diffraction images. In the pressure-temperature range covered in this experiment, the gadolinium sample is observed in its hcp, αSm, and dhcp phases. Under this temperature cycling, the hcp → αSm transition proceeds in discontinuous steps at points along the expected phase boundary. From these measurements (representing only one hour of synchrotron x-ray collection time), a single-experiment equation of state and phase diagram of each phase of gadolinium is presented for the range of 0-10 GPa and 300-650 K.

Microstructure and Properties of a New Cr - Mn Steel without Boron Additions for Use in Hot Stamping

NASA Astrophysics Data System (ADS)

Zhou, H.; Zhu, G.; Li, Q.; Chen, Q.

2015-09-01

Anew hot-stamping steel that is alloyed with chromium and manganese and does not contain boron additions has been developed. The effect of reheating temperature and cooling rates on the mechanical properties and structure of the steel is determined. Atreatment regime that increases the ductility of the steel without a noticeable decrease in its strength is proposed.

Development of Spacecraft Materials and Structures Fundamentals.

DTIC Science & Technology

1985-08-01

900. This is comparable to the dihedral angle observed in uranium dioxide’ ° and silicon carbide ,’ 2 which...necesjary and identify by bigich numberp FIELD GROUP I suB. GR. Boron carbide , sintering, grain growth, microstructure, microcracking, mechanical...Compacts of boron carbide powders with specific surface area >, 8 m2 / were sintered in argon at temperatures near 2200*C. Several of these powders were

Ignition kinetics of boron in primary combustion products of propellant based on its unique characteristics

NASA Astrophysics Data System (ADS)

Ao, Wen; Wang, Yang; Wu, Shixi

2017-07-01

Study on the boron-based primary combustion products can bridge the gap between primary combustion and secondary combustion in solid rocket ramjets. To clarify the initial state and ignition characteristics of boron particles in the after-burning chamber of solid rocket ramjets, the elemental, composition and morphology of the primary combustion products collected under gas generator chamber pressure of 0.2 MPa and 6 MPa were investigated by energy dispersive (EDS), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy with energy dispersive (SEM-EDS) individually. The ignition times of boron particles among the primary combustion products were determined using a high temperature tube furnace system. The BD model was adopted for numerical verification. The numerical solution procedure of boron ignition model in a real afterburner chamber was modified. The results show that the sum of B, C, O elements in the primary combustion products reaches approximately 90%. The primary combustion products are mainly consisted of B, C, and B2O3. Images of the primary combustion products present highly agglomeration, indicating an oxidation of boron surface. Numerous spherical carbon particles with a diameter around 100 nm are observed in the products. Three features of the boron in the primary combustion products are obtained, compared to virgin boron. First most of the boron lumps are covered by carbon particles on the surface. Second the mean particle size is five times larger than that of virgin boron. Third the overall initial oxide layer covered on boron surface increases its thickness by above 0.1 μm. The ignition time of boron in the primary combustion products reaches 20-30 ms under 1673-1873 K, which is quite different from virgin boron of 4 ms. Numerical calculation results show the key reason leading to such a long ignition time is the variation of the initial oxide layer thickness. In conclusion, the physicochemical properties of boron particles are found to differ with virgin boron after primary combustion process. The accurate evaluation of the initial oxide layer thickness and initial particle radius is a crucial procedure before the numerical calculation of boron ignition kinetics. Results of our study are expected to provide better insight in the simulation of solid rocket ramjets working process.

Nucleation Control for Large, Single Crystalline Domains of Monolayer Hexagonal Boron Nitride via Si-Doped Fe Catalysts

PubMed Central

2015-01-01

The scalable chemical vapor deposition of monolayer hexagonal boron nitride (h-BN) single crystals, with lateral dimensions of ∼0.3 mm, and of continuous h-BN monolayer films with large domain sizes (>25 μm) is demonstrated via an admixture of Si to Fe catalyst films. A simple thin-film Fe/SiO2/Si catalyst system is used to show that controlled Si diffusion into the Fe catalyst allows exclusive nucleation of monolayer h-BN with very low nucleation densities upon exposure to undiluted borazine. Our systematic in situ and ex situ characterization of this catalyst system establishes a basis for further rational catalyst design for compound 2D materials. PMID:25664483

Chemical vapor deposition of W-Si-N and W-B-N

DOEpatents

Fleming, J.G.; Roherty-Osmun, E.L.; Smith, P.M.; Custer, J.S.; Jones, R.V.; Nicolet, M.; Madar, R.; Bernard, C.

1999-06-29

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

Optical phonon modes in rhombohedral boron monosulfide under high pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cherednichenko, Kirill A.; IMPMC, UPMC Sorbonne Universités, CNRS UMR 7590, 75005 Paris; LSPM–CNRS, Université Paris Nord, 93430 Villetaneuse

2015-05-14

Raman spectra of rhombohedral boron monosulfide (r-BS) were measured under pressures up to 34 GPa at room temperature. No pressure-induced structural phase transition was observed, while strong pressure shift of Raman bands towards higher wavenumbers has been revealed. IR spectroscopy as a complementary technique has been used in order to completely describe the phonon modes of r-BS. All experimentally observed bands have been compared with theoretically calculated ones and modes assignment has been performed. r-BS enriched by {sup 10}B isotope was synthesized, and the effect of boron isotopic substitution on Raman spectra was observed and analyzed.

Boron Nitride Nanotubes-Reinforced Glass Composites

NASA Technical Reports Server (NTRS)

Bansal, Narottam; Hurst, Janet B.; Choi, Sung R.

2005-01-01

Boron nitride nanotubes of significant lengths were synthesized by reaction of boron with nitrogen. Barium calcium aluminosilicate glass composites reinforced with 4 weight percent of BN nanotubes were fabricated by hot pressing. Ambient-temperature flexure strength and fracture toughness of the glass-BN nanotube composites were determined. The strength and fracture toughness of the composite were higher by as much as 90 and 35 percent, respectively, than those of the unreinforced glass. Microscopic examination of the composite fracture surfaces showed pullout of the BN nanotubes. The preliminary results on the processing and improvement in mechanical properties of BN nanotube reinforced glass matrix composites are being reported here for the first time.

Preparation and uses of amorphous boron carbide coated substrates

DOEpatents

Riley, Robert E.; Newkirk, Lawrence R.; Valencia, Flavio A.

1981-09-01

Cloth is coated at a temperature below about 1000.degree. C. with amorphous boron-carbon deposits in a process which provides a substantially uniform coating on all the filaments making up each yarn fiber bundle of the cloth. The coated cloths can be used in the as-deposited condition for example as wear surfaces where high hardness values are needed; or multiple layers of coated cloths can be hot-pressed to form billets useful for example in fusion reactor wall armor. Also provided is a method of controlling the atom ratio of B:C of boron-carbon deposits onto any of a variety of substrates, including cloths.

Preparation and uses of amorphous boron carbide coated substrates

DOEpatents

Riley, R.E.; Newkirk, L.R.; Valencia, F.A.; Wallace, T.C.

1979-12-05

Cloth is coated at a temperature below about 1000/sup 0/C with amorphous boron-carbon deposits in a process which provides a substantially uniform coating on all the filaments making up each yarn fiber bundle of the cloth. The coated cloths can be used in the as-deposited condition for example as wear surfaces where high hardness values are needed; or multiple layers of coated cloths can be hot-pressed to form billets useful for example in fusion reactor wall armor. Also provided is a method of controlling the atom ratio of B:C of boron-carbon deposits onto any of a variety of substrates, including cloths.

Surface Chemistry, Microstructure, and Tribological Properties of Cubic Boron Nitride Films

NASA Technical Reports Server (NTRS)

Watanabe, Shuichi; Wheeler, Donald R.; Abel, Phillip B.; Street, Kenneth W.; Miyoshi, Kazuhisa; Murakawa, Masao; Miyake, Shojiro

1998-01-01

This report deals with the surface chemistry, microstructure, bonding state, morphology, and friction and wear properties of cubic boron nitride (c-BN) films that were synthesized by magnetically enhanced plasma ion plating. Several analytical techniques - x-ray photoelectron spectroscopy, transmission electron microscopy and electron diffraction, Fourier transform infrared spectroscopy, atomic force microscopy, and surface profilometry - were used to characterize the films. Sliding friction experiments using a ball-on-disk configuration were conducted for the c-BN films in sliding contact with 440C stainless-steel balls at room temperature in ultrahigh vacuum (pressure, 10(exp -6), in ambient air, and under water lubrication. Results indicate that the boron-to-nitrogen ratio on the surface of the as-deposited c-BN film is greater than 1 and that not all the boron is present as boron nitride but a small percentage is present as an oxide. Both in air and under water lubrication, the c-BN film in sliding contact with steel showed a low wear rate, whereas a high wear rate was observed in vacuum. In air and under water lubrication, c-BN exhibited wear resistance superior to that of amorphous boron nitride, titanium nitride, and titanium carbide.

Deposition and characterization of B4C/CeO2 multilayers at 6.x nm extreme ultraviolet wavelengths

NASA Astrophysics Data System (ADS)

Sertsu, M. G.; Giglia, A.; Brose, S.; Park, D.; Wang, Z. S.; Mayer, J.; Juschkin, L.; Nicolosi, P.

2016-03-01

New multilayers of boron carbide/cerium dioxide (B4C/CeO2) combination on silicon (Si) substrate are manufactured to represent reflective-optics candidates for future lithography at 6.x nm wavelength. This is one of only a few attempts to make multilayers of this kind. Combination of several innovative experiments enables detailed study of optical properties, structural properties, and interface profiles of the multilayers in order to open up a room for further optimization of the manufacturing process. The interface profile is visualized by high-angle annular dark-field imaging which provides highly sensitive contrast to atomic number. Synchrotron based at-wavelength extreme ultraviolet (EUV) reflectance measurements near the boron (B) absorption edge allow derivation of optical parameters with high sensitivity to local atom interactions. X-ray reflectivity measurements at Cu-Kalpha (8 keV ) determine the period of multilayers with high in-depth resolution. By combining these measurements and choosing robust nonlinear curve fitting algorithms, accuracy of the results has been significantly improved. It also enables a comprehensive characterization of multilayers. Interface diffusion is determined to be a major cause for the low reflectivity performance. Optical constants of B4C and CeO2 layers are derived in EUV wavelengths. Besides, optical properties and asymmetric thicknesses of inter-diffusion layers (interlayers) in EUV wavelengths near the boron edge are determined. Finally, ideal reflectivity of the B4C/CeO2 combination is calculated by using optical constants derived from the proposed measurements in order to evaluate the potentiality of the design.

Thermal design of composite materials high temperature attachments

NASA Technical Reports Server (NTRS)

1972-01-01

The thermal aspects of using filamentary composite materials as primary airframe structures on advanced atmospheric entry spacecraft such as the space shuttle vehicle were investigated to identify and evaluate potential design approaches for maintaining composite structures within allowable temperature limits at thermal protection system (TPS) attachments and/or penetrations. The investigation included: (1) definition of thermophysical data for composite material structures; (2) parametric characterization and identification of the influence of the aerodynamic heating and attachment design parameters on composite material temperatures; (3) conceptual design, evaluation, and detailed thermal analyses of temperature limiting design concepts; and (4) the development of experimental data for assessment of the thermal design methodologies and data used for evaluation of the temperature-limiting design concepts. Temperature suppression attachment concepts were examined for relative merit. The simple isolator was identified as the most weight-effective concept and was selected for detail design, thermal analysis, and testing. Tests were performed on TPS standoff attachments to boron/aluminum, boron/polyimide and graphite/epoxy composite structures.

Advanced high temperature thermoelectrics for space power

NASA Technical Reports Server (NTRS)

Lockwood, A.; Ewell, R.; Wood, C.

1981-01-01

Preliminary results from a spacecraft system study show that an optimum hot junction temperature is in the range of 1500 K for advanced nuclear reactor technology combined with thermoelectric conversion. Advanced silicon germanium thermoelectric conversion is feasible if hot junction temperatures can be raised roughly 100 C or if gallium phosphide can be used to improve the figure of merit, but the performance is marginal. Two new classes of refractory materials, rare earth sulfides and boron-carbon alloys, are being investigated to improve the specific weight of the generator system. Preliminary data on the sulfides have shown very high figures of merit over short temperature ranges. Both n- and p-type doping have been obtained. Pure boron-carbide may extrapolate to high figure of merit at temperatures well above 1500 K but not lower temperature; n-type conduction has been reported by others, but not yet observed in the JPL program. Inadvertant impurity doping may explain the divergence of results reported.

Controlled in situ boron doping of diamond thin films using solution phase

NASA Astrophysics Data System (ADS)

Roy, M.; Dua, A. K.; Nuwad, J.; Girija, K. G.; Tyagi, A. K.; Kulshreshtha, S. K.

2006-12-01

Controlled boron doping of diamond film using nontoxic reagents is a challenge in itself. During the present study, attempts have been made to dope diamond films in situ with boron from a solution of boric acid (H3BO3) in methanol (CH3OH) using a specially designed bubbler that ensured continuous and controlled flow of vapors of boron precursors during deposition. The samples are thoroughly characterized using a host of techniques comprising of x-ray photoelectron spectroscopy, Raman, x-ray diffraction, and current-voltage measurements (I-V). Cross-sectional micro-Raman spectroscopy has been used to obtain depth profile of boron in diamond films. Boron concentration ([B]) in the films is found to vary linearly on a semilog scale with molarity (M) of H3BO3 in CH3OH. Lattice constant of our samples is smaller than the reported American society for testing and materials (ASTM) values due to oxygen incorporation and it increases with [B] in the diamond samples. Heavily boron doped samples exhibit Fano deformation of the Raman line shape and negative and/zero activation barrier in temperature dependent I-V measurements that indicate the formation of metallic phase in the samples. The present study illustrates the feasibility of safe and controlled boron doping of diamond films using a solution of H3BO3 in CH3OH over a significant range of [B] from semiconductor to metallic regime but with a little adverse effect due to unintentional but unavoidable incorporation of oxygen.

Extended defects and hydrogen interactions in ion implanted silicon

NASA Astrophysics Data System (ADS)

Rangan, Sanjay

The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (<650°C) defect dissolution and defect injection dominates, resulting in increased junction depths. At higher anneal temperatures, however, repair dominates over defect injection resulting in shallower junctions. Hydrogenation experiments shows that hydrogen enhances dopant activation and reduces TED at low anneal temperatures (<550°C). At anneal temperatures >550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for along time (300min). Also presented is the recipe for formation of multiple cavity layers and the electrical and optical properties of these cavities. Electrically, these cavities are metastable, with two strong minority carrier peaks formed by multiple defect levels. Photoluminescence measurements reveal a strong 0.8eV photon peak.

One-pot synthesis of reduced graphene oxide@boron nitride nanosheet hybrids with enhanced oxidation-resistant properties

NASA Astrophysics Data System (ADS)

Sun, Guoxun; Bi, Jianqiang; Wang, Weili; Zhang, Jingde

2017-12-01

Reduced graphene oxide@boron nitride nanosheet (RGO@BNNS) hybrids were prepared for the first time using template-assisted autoclave pyrolysis technique at the temperature as low as 600 °C. The developed method can be scaled into gram-scale synthesis of the material. The BNNSs combine with RGO through van der Waals interplanar interaction without damaging the structures of RGO. Such ultrathin BNNSs on the surface of RGO can serve as high-performance oxidation-resistant coatings in oxidizing atmospheres at high temperatures. The RGO@BNNS hybrids can sustain up to 800 °C over a relatively long period of time.

Spring Constants for Stacks of Curved Leaves of Pyrolytic Boron Nitride

NASA Technical Reports Server (NTRS)

Kaforey, M. L.; Deeb, C. W.; Matthiesen, D. H.

1999-01-01

Stacks of curved leaves of pyrolytic boron nitride (PBN) were deflected and the force versus deflection data was recorded. From this data, the spring constant for a given spring geometry (radius of curvature of a leaf, width of a leaf, thickness of a leaf, and number of leaves in the stack) was determined. These experiments were performed at room temperature, 500 C and 1000 C. However, temperature was not found to affect the spring constant. The measured values were generally within one order of magnitude of predictions made using a previously derived equation for a simply supported cylindrical section with a line force at the center.

Wavelength dependence of the Brillouin spectral width of boron doped germanosilicate optical fibers.

PubMed

Law, Pi-Cheng; Dragic, Peter D

2010-08-30

Boron co-doped germanosilicate fibers are investigated via the Brillouin light scattering technique using two wavelengths, 1534 nm and 1064 nm. Several fibers are investigated, including four drawn from the same preform but at different draw temperatures. The Stokes' shifts and the Brillouin spectral widths are found to increase with increasing fiber draw temperature. A frequency-squared law has adequately described the wavelength dependence of the Brillouin spectral width of conventional Ge-doped fibers. However, it is found that unlike conventional Ge-doped fibers these fibers do not follow the frequency-squared law. This is explained through a frequency-dependent dynamic viscosity that modifies this law.

Hall effects on peristalsis of boron nitride-ethylene glycol nanofluid with temperature dependent thermal conductivity

NASA Astrophysics Data System (ADS)

Abbasi, F. M.; Gul, Maimoona; Shehzad, S. A.

2018-05-01

Current study provides a comprehensive numerical investigation of the peristaltic transport of boron nitride-ethylene glycol nanofluid through a symmetric channel in presence of magnetic field. Significant effects of Brownian motion and thermophoresis have been included in the energy equation. Hall and Ohmic heating effects are also taken into consideration. Resulting system of non-linear equations is solved numerically using NDSolve in Mathematica. Expressions for velocity, temperature, concentration and streamlines are derived and plotted under the assumption of long wavelength and low Reynolds number. Influence of various parameters on heat and mass transfer rates have been discussed with the help of bar charts.

Growth kinetics of borided layers: Artificial neural network and least square approaches

NASA Astrophysics Data System (ADS)

Campos, I.; Islas, M.; Ramírez, G.; VillaVelázquez, C.; Mota, C.

2007-05-01

The present study evaluates the growth kinetics of the boride layer Fe 2B in AISI 1045 steel, by means of neural networks and the least square techniques. The Fe 2B phase was formed at the material surface using the paste boriding process. The surface boron potential was modified considering different boron paste thicknesses, with exposure times of 2, 4 and 6 h, and treatment temperatures of 1193, 1223 and 1273 K. The neural network and the least square models were set by the layer thickness of Fe 2B phase, and assuming that the growth of the boride layer follows a parabolic law. The reliability of the techniques used is compared with a set of experiments at a temperature of 1223 K with 5 h of treatment time and boron potentials of 2, 3, 4 and 5 mm. The results of the Fe 2B layer thicknesses show a mean error of 5.31% for the neural network and 3.42% for the least square method.

Transport properties of ultrathin black phosphorus on hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doganov, Rostislav A.; Özyilmaz, Barbaros; Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore

2015-02-23

Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explainmore » the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.« less

Simple and Efficient Generation of Aryl Radicals from Aryl Triflates: Synthesis of Aryl Boronates and Aryl Iodides at Room Temperature.

PubMed

Liu, Wenbo; Yang, Xiaobo; Gao, Yang; Li, Chao-Jun

2017-06-28

Despite the wide use of aryl radicals in organic synthesis, current methods to prepare them from aryl halides, carboxylic acids, boronic acids, and diazonium salts suffer from limitations. Aryl triflates, easily obtained from phenols, are promising aryl radical progenitors but remain elusive in this regard. Inspired by the single electron transfer process for aryl halides to access aryl radicals, we developed a simple and efficient protocol to convert aryl triflates to aryl radicals. Our success lies in exploiting sodium iodide as the soft electron donor assisted by light. This strategy enables the scalable synthesis of two types of important organic molecules, i.e., aryl boronates and aryl iodides, in good to high yields, with broad functional group compatibility in a transition-metal-free manner at room temperature. This protocol is anticipated to find potential applications in other aryl-radical-involved reactions by using aryl triflates as aryl radical precursors.

Synthesis of Continuous Boron Nitride Nanofibers by Electrospinning

NASA Astrophysics Data System (ADS)

Li, Xia; Wen, G.; Zhang, Tao; Xia, Long; Zhong, Bo; Fan, Shaoyu

Continuous boron nitride nanofibers (BNNFs) have been gotten by electrospinning. The appropriate precursor of BNNFs was electrospinned to green born nitride nanofibers (GBNNFs) with temperatures from 80°C to 100°C in the protection of N2. By successive heat treatments in N2, the organics in GBNNFs disappeared and BN ceramics nanofibers came into being. The average diameters of BNNFs by electrospinning are less than 10 μm

Unusual Enhancement in Intrinsic Thermal Conductivity of Multilayer Graphene by Tensile Strains

DOE PAGES

Kuang, Youdi; Lindsay, Lucas R.; Huang, Baoling

2015-01-01

High basal plane thermal conductivity k of multi-layer graphene makes it promising for thermal management applications. Here we examine the effects of tensile strain on thermal transport in this system. Using a first principles Boltzmann-Peierls equation for phonon transport approach, we calculate the room-temperature in-plane lattice k of multi-layer graphene (up to four layers) and graphite under different isotropic tensile strains. The calculated in-plane k of graphite, finite mono-layer graphene and 3-layer graphene agree well with previous experiments. The dimensional transitions of the intrinsic k and the extent of the diffusive transport regime from mono-layer graphene to graphite are presented.more » We find a peak enhancement of intrinsic k for multi-layer graphene and graphite with increasing strain and the largest enhancement amplitude is about 40%. In contrast the calculated intrinsic k with tensile strain decreases for diamond and diverges for graphene, we show that the competition between the decreased mode heat capacities and the increased lifetimes of flexural phonons with increasing strain contribute to this k behavior. Similar k behavior is observed for 2-layer hexagonal boron nitride systems, suggesting that it is an inherent thermal transport property in multi-layer systems assembled of purely two dimensional atomic layers. This study provides insights into engineering k of multi-layer graphene and boron nitride by strain and into the nature of thermal transport in quasi-two-dimensional and highly anisotropic systems.« less

Structural modifications induced by ion irradiation and temperature in boron carbide B4C

NASA Astrophysics Data System (ADS)

Victor, G.; Pipon, Y.; Bérerd, N.; Toulhoat, N.; Moncoffre, N.; Djourelov, N.; Miro, S.; Baillet, J.; Pradeilles, N.; Rapaud, O.; Maître, A.; Gosset, D.

2015-12-01

Already used as neutron absorber in the current French nuclear reactors, boron carbide (B4C) is also considered in the future Sodium Fast Reactors of the next generation (Gen IV). Due to severe irradiation conditions occurring in these reactors, it is of primary importance that this material presents a high structural resistance under irradiation, both in the ballistic and electronic damage regimes. Previous works have shown an important structural resistance of boron carbide even at high neutron fluences. Nevertheless, the structural modification mechanisms due to irradiation are not well understood. Therefore the aim of this paper is to study structural modifications induced in B4C samples in different damage regimes. The boron carbide pellets were shaped and sintered by using spark plasma sintering method. They were then irradiated in several conditions at room temperature or 800 °C, either by favoring the creation of ballistic damage (between 1 and 3 dpa), or by favoring the electronic excitations using 100 MeV swift iodine ions (Se ≈ 15 keV/nm). Ex situ micro-Raman spectroscopy and Doppler broadening of annihilation radiation technique with variable energy slow positrons were coupled to follow the evolution of the B4C structure under irradiation.

Possible observation of the Berezinskii-Kosterlitz-Thouless transition in boron-doped diamond films

NASA Astrophysics Data System (ADS)

Coleman, Christopher; Bhattacharyya, Somnath

2017-11-01

The occurrence of the Berezinskii-Kosterlitz-Thouless (BKT) transition is investigated in heavily boron-doped nanocrystalline diamond films through a combination of current-voltage and resistance measurements. We observe transport features suggesting a robust BKT transition along with transport features related to vortex pinning in nanocrystalline diamond films with smaller grain size. The vortex core energy determined through analysis of the resistance temperature curves was found to be anti-correlated to the BKT transition temperatures. It is also observed that the higher BKT temperature is related to an increased vortex-antivortex binding energy derived from the activated transport regions. Further, the magnetic field induced superconductor insulator transition shows the possibility of the charge glass state. The consequences of granularity such as localization and vortex pinning can lead to tuneable BKT temperatures and strongly affects the field induced insulating state.

All-Diamond Microelectrodes as Solid State Probes for Localized Electrochemical Sensing.

PubMed

Silva, Eduardo L; Gouvêa, Cristol P; Quevedo, Marcela C; Neto, Miguel A; Archanjo, Braulio S; Fernandes, António J S; Achete, Carlos A; Silva, Rui F; Zheludkevich, Mikhail L; Oliveira, Filipe J

2015-07-07

The fabrication of an all-diamond microprobe is demonstrated for the first time. This ME (microelectrode) assembly consists of an inner boron doped diamond (BDD) layer and an outer undoped diamond layer. Both layers were grown on a sharp tungsten tip by chemical vapor deposition (CVD) in a stepwise manner within a single deposition run. BDD is a material with proven potential as an electrochemical sensor. Undoped CVD diamond is an insulating material with superior chemical stability in comparison to conventional insulators. Focused ion beam (FIB) cutting of the apex of the ME was used to expose an electroactive BDD disk. By cyclic voltammetry, the redox reaction of ferrocenemethanol was shown to take place at the BDD microdisk surface. In order to ensure that the outer layer was nonelectrically conductive, a diffusion barrier for boron atoms was established seeking the formation of boron-hydrogen complexes at the interface between the doped and the undoped diamond layers. The applicability of the microelectrodes in localized corrosion was demonstrated by scanning amperometric measurements of oxygen distribution above an Al-Cu-CFRP (Carbon Fiber Reinforced Polymer) galvanic corrosion cell.

Effects of Different Boron Compounds on the Corrosion Resistance of Andalusite-Based Low-Cement Castables in Contact with Molten Al Alloy

NASA Astrophysics Data System (ADS)

Adabifiroozjaei, Esmaeil; Koshy, Pramod; Sorrell, Charles Chris

2012-02-01

Interfacial reactions between Al alloy and andalusite low-cement castables (LCCs) containing 5 wt pct B2O3, B4C, and BN were analyzed at 1123 K and 1433 K (850 °C and 1160 °C) using the Alcoa cup test. The results showed that the addition of boron-containing materials led to the formation of aluminoborate (9Al2O3.2B2O3) and glassy phase containing boron in the prefiring temperature (1373 K [1100 °C]), which consequently improved the corrosion resistance of the refractories. The high heat of formation of the aluminoborate phase (which increased its stability to reactions with molten Al alloy) and the low solubility of boron in molten Al were the major factors that contributed to the improvement in the corrosion resistance of B-doped samples.

Single-Photon Emitters in Boron Nitride Nanococoons.

PubMed

Ziegler, Joshua; Blaikie, Andrew; Fathalizadeh, Aidin; Miller, David; Yasin, Fehmi S; Williams, Kerisha; Mohrhardt, Jordan; McMorran, Benjamin J; Zettl, Alex; Alemán, Benjamín

2018-04-11

Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are attractive for a variety of quantum and photonic technologies because they combine ultra-bright, room-temperature single-photon emission with an atomically thin crystal. However, the emitter's prominence is hindered by large, strain-induced wavelength shifts. We report the discovery of a visible-wavelength, single-photon emitter (SPE) in a zero-dimensional boron nitride allotrope (the boron nitride nanococoon, BNNC) that retains the excellent optical characteristics of few-layer hBN while possessing an emission line variation that is lower by a factor of 5 than the hBN emitter. We determined the emission source to be the nanometer-size BNNC through the cross-correlation of optical confocal microscopy with high-resolution scanning and transmission electron microscopy. Altogether, this discovery enlivens color centers in BN materials and, because of the BN nanococoon's size, opens new and exciting opportunities in nanophotonics, quantum information, biological imaging, and nanoscale sensing.

Boron isotope systematics of tourmaline formation in the Sullivan Pb-Zn-Ag deposit, British Columbia, Canada

USGS Publications Warehouse

Jiang, S.-Y.; Palmer, M.R.; Slack, J.F.; Shaw, D.R.

1999-01-01

We report here the results of 54 boron isotope analyses of tourmaline associated with the giant Sullivan Pb-Zn-Ag deposit in southeastern British Columbia, Canada. The ??11B values range from -11.1 to -2.9???, which is almost as great as the range found worldwide in tourmalines from 33 massive sulfide deposits and tourmalinites in dominantly clastic metasedimentary terranes. The major control on the overall ??11B values of the Sullivan tourmalinites is the boron source. Potential controls over the large range of the data also include: (1) differences in formation temperatures of the tourmalinites, (2) different stages of tourmaline formation, (3) variations in the proportions of dissolved boron incorporated into the tourmaline (Rayleigh fractionation), (4) seawater entrainment, and (5) post-depositional metamorphism. The boron isotope data at Sullivan are consistent with boron derivation from leaching of footwall clastic sediments. However, the great abundance of tourmaline in the Sullivan deposit suggests that the local clastic sediments were not the sole source of boron, and we argue that non-marine evaporites, buried deep below the orebody, are the most viable source of this additional boron. It is likely that some of the variation in tourmaline ??11B values reflect mixing of boron from these two sources. Comparison of the potential effects of these controls with geologic and other geochemical evidence suggests that major causes for the wide range of ??11B values measured at Sullivan are seawater entrainment and Rayleigh fractionation, although in places, post-depositional alteration and thermal metamorphism were important in determining ??11B values of some of the recrystallized tourmalinites.

Crystal Chemistry and Magnetism of Ternary Actinoid Boron Carbides UB 1- xC 1+ x and U 1- xMxB 2C with M = Sc, Lu, and Th

NASA Astrophysics Data System (ADS)

Rogl, P.; Rupp, B.; Felner, I.; Fischer, P.

1993-06-01

Within the homogeneous range of uranium monocarbide UB 1- xC 1+ x, the crystal structures of stoichiometric UBC and of the carbon-rich solid solution UB 0.78C 1.22, have been refined from single-crystal X-ray counter data. From X-ray analysis crystal symmetry in both cases is consistent with the centro-symmetric space group Cmcm and there are no indications of superstructure formation. In contrast to the fully ordered atom arrangement revealed for stoichiometric UBC ( a = 0.35899(4), b = 1.19781(12), c = 0.33474(3) nm), random occupation by boron and carbon atoms is observed for the boron site in UB 0.78C 1.22 ( a = 0.35752(4), b = 1.18584(3), c = 0.33881(4) nm). For 279(278) reflections (|F 0| > 3σ) the obtained reliability factors R x = ∑|ΔF|/∑| F0| were R x = 0.069 for UBC and R x = 0.050 for UB 0.78C 1.22. Neutron powder diffraction experiments at 9 and 295 K unambiguously revealed full occupancy by the nonmetal atoms in UB 0.78C 1.22 and prove the statistical occupation of B and C atoms in the B-sites. For the orthorhombic symmetry Cmcm, refinement was not better than R1 = 0.044. A model calculation in monoclinic symmetry C12/ m1, however, resulted in a significant reduction of the residual value to R1 = 0.030, releasing spatial constraints on the boron atoms. Thus the boron-boron chain in Cmcm (B-B = 0.1874 nm) is dissolved into boron pairs (B-B = 0.1706 nm) which are loosely bound at a distance of 0.2043 nm. The formation of C-B-B-C groups corresponds to the structure types of ThBC and Th 3B 2C 3. The magnetic behavior has been investigated in the temperature range from 4.2 K to 1000 K for UB 1- xC 1+ x (UBC-type) and U 1- xMxB 2C (ThB 2C-type for the high temperature modification and 1-UB 2C-type for the low temperature modification) with U partially substituted by Th or Sc, Lu. From magnetic susceptibilities, the alloys UB 1- xC 1+ x reveal temperature independent paramagnetism with typical intermediate valence fluctuation behavior ( TSF ˜ 350 K). ThB 2C and 1-UB 2C both are temperature independent paramagnets, whereas h-UB 2C is a ferromagnet with the rather high Curie temperature TM = 80(2) K. TM and the saturation magnetiziation per U atom both successively decrease on substitution of U by Th, Sc, or Lu in UB 2C, whereas the U-moments remain practically unchanged at μ eff(U) ˜ 1.9 μ B. Uranium L 3-XANES (X-ray Absorption Near Edge Structure) spectroscopy revealed increased d-band localization, comparable to uranium-transition metal alloys, in nonmagnetic UB 1- xC 1+ x ( x = 0, 0.22). No superconductivity was observed down to 1.5 K; no hydrogen uptake was observed for UB 2C and ThB 2C even under hydrogen pressures as high as 7 × 10 7 Pa at 670 K.

Intra-Shell boron isotope ratios in benthic foraminifera: Implications for paleo-pH reconstructions

NASA Astrophysics Data System (ADS)

Rollion-Bard, C.; Erez, J.

2009-12-01

The boron isotope composition of marine carbonates is considered to be a seawater pH proxy. Nevertheless, the use of δ11B has some limitations: 1) the knowledge of fractionation factor (α4-3) between the two boron dissolved species (boric acid and borate ion), 2) the δ11B of seawater may have varied with time and 3) the amplitude of the "vital effects" of this proxy. Using secondary ion mass spectrometry (SIMS), we looked at the internal variability in the boron isotope ratio of the shallow water, symbionts bearing foraminiferan Amphistegina lobifera. Specimens were cultured at constant temperature (24±0.1 °C) in seawater with pH ranging between 7.90 and 8.45. We performed 6 to 8 measurements of δ11B in each foraminifera. Intra-shell boron isotopes show large variability with an upper threshold value of pH ~ 9. The ranges of the skeletal calculated pH values in different cultured foraminifera, show strong correlation with the culture pH values and may thus serve as proxy for pH in the past ocean.

Cellulose nanobiocomposites with reinforcement of boron nitride: study of thermal, oxygen barrier and chemical resistant properties.

PubMed

Swain, Sarat K; Dash, Satyabrata; Behera, Chandini; Kisku, Sudhir K; Behera, Lingaraj

2013-06-20

A series of cellulose based nanobiocomposites (cellulose/BN) were prepared with incorporation of various percentage of nano boron nitride (BN). The interaction between cellulose and boron nitride was studied by Fourier transform infrared spectroscopy (FTIR). The structure of cellulose/BN nanobiocomposites was investigated by XRD, FESEM, and HRTEM. It was observed that the boron nitride nanoparticles were dispersed within cellulose matrix due to intercalation and partial exfoliation. The quantitative identification of nanobiocomposites was investigated by selected area electron diffraction (SAED). Thermal stabilities of the prepared nanobiocomposites were measured by thermo gravimetric analysis (TGA) and it was found that thermal stability of the nanobiocomposites was higher than the virgin cellulose. The oxygen barrier property of cellulose/BN nanobiocomposites was measured using a gas permeameter and a substantial reduction in oxygen permeability due to increase in boron nitride loading was observed. Further it was noticed that the chemical resistance of the nanobiocomposites was more than the virgin cellulose. Hence, the prepared nanobiocomposite may be widely used for insulating and temperature resistant packaging materials. Copyright © 2013 Elsevier Ltd. All rights reserved.

Platinum Nanoparticle Loading of Boron Nitride Aerogel and Its Use as a Novel Material for Low-Power Catalytic Gas Sensing

DOE PAGES

Harley-Trochimczyk, Anna; Pham, Thang; Chang, Jiyoung; ...

2015-12-09

We report that a high-surface-area, highly crystalline boron nitride aerogel synthesized with nonhazardous reactants has been loaded with crystalline platinum nanoparticles to form a novel nanomaterial that exhibits many advantages for use in a catalytic gas sensing application. The platinum nanoparticle-loaded boron nitride aerogel integrated onto a microheater platform allows for calorimetric propane detection. The boron nitride aerogel exhibits thermal stability up to 900 °C and supports disperse platinum nanoparticles, with no sintering observed after 24 h of high-temperature testing. The high thermal conductivity and low density of the boron nitride aerogel result in an order of magnitude faster responsemore » and recovery times (<2 s) than reported on alumina support and allow for 10% duty cycling of the microheater with no loss in sensitivity. Lastly, the resulting 1.5 mW sensor power consumption is two orders of magnitude less than commercially available catalytic gas sensors and unlocks the potential for wireless, battery-powered catalytic gas sensing.« less

TEM Studies of Boron-Modified 17Cr-7Ni Precipitation-Hardenable Stainless Steel via Rapid Solidification Route

NASA Astrophysics Data System (ADS)

Gupta, Ankur; Bhargava, A. K.; Tewari, R.; Tiwari, A. N.

2013-09-01

Commercial grade 17Cr-7Ni precipitation-hardenable stainless steel has been modified by adding boron in the range 0.45 to 1.8 wt pct and using the chill block melt-spinning technique of rapid solidification (RS). Application of RS has been found to increase the solid solubility of boron and hardness of 17Cr-7Ni precipitation-hardenable stainless steel. The hardness of the boron-modified rapidly solidified alloys has been found to increase up to ~280 pct after isochronal aging to peak hardness. A TEM study has been carried out to understand the aging behavior. The presence of M23(B,C)6 and M2(B,C) borocarbides and epsilon-carbide in the matrix of austenite and ferrite with a change in heat treatment temperature has been observed. A new equation for Creq is also developed which includes the boron factor on ferrite phase stability. The study also emphasizes that aluminum only takes part in ferrite phase stabilization and remains in the solution.

Improved Dental Implant Drill Durability and Performance Using Heat and Wear Resistant Protective Coatings.

PubMed

Er, Nilay; Alkan, Alper; Ilday, Serim; Bengu, Erman

2018-06-01

The dental implant drilling procedure is an essential step for implant surgery, and frictional heat in bone during drilling is a key factor affecting the success of an implant. The aim of this study was to increase the dental implant drill lifetime and performance by using heat- and wear-resistant protective coatings to decrease the alveolar bone temperature caused by the dental implant drilling procedure. Commercially obtained stainless steel drills were coated with titanium aluminum nitride, diamond-like carbon, titanium boron nitride, and boron nitride coatings via magnetron-sputter deposition. Drilling was performed on bovine femoral cortical bone under the conditions mimicking clinical practice. Tests were performed under water-assisted cooling and under the conditions when no cooling was applied. Coated drill performances and durabilities were compared with those of three commonly used commercial drills with surfaces made from zirconia, black diamond. and stainless steel. Protective coatings with boron nitride, titanium boron nitride, and diamond-like carbon have significantly improved drill performance and durability. In particular, boron nitride-coated drills have performed within safe bone temperature limits for 50 drillings even when no cooling is applied. Titanium aluminium nitride coated drills did not show any improvement over commercially obtained stainless steel drills. Surface modification using heat- and wear-resistant coatings is an easy and highly effective way to improve implant drill performance and durability, which can improve the surgical procedure and the postsurgical healing period. The noteworthy success of different types of coatings is novel and likely to be applicable to various other medical systems.

Radiation hardening of MOS devices by boron. [for stabilizing gate threshold potential of field effect device

NASA Technical Reports Server (NTRS)

Danchenko, V. (Inventor)

1974-01-01

A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. The boron is introduced within a layer of the oxide of about 100 A-300 A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 to the 18th power atoms/cu cm. The technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations.

High-pressure high-temperature phase diagram of gadolinium studied using a boron-doped heater anvil

DOE Office of Scientific and Technical Information (OSTI.GOV)

Montgomery, J. M.; Samudrala, G. K.; Vohra, Y. K.

A boron-doped designer heater anvil is used in conjunction with powder x-ray diffraction to collect structural information on a sample of quasi-hydrostatically loaded gadolinium metal up to pressures above 8 GPa and 600 K. The heater anvil consists of a natural diamond anvil that has been surface modified with a homoepitaxially grown chemical-vapor-deposited layer of conducting boron-doped diamond, and is used as a DC heating element. Internally insulating both diamond anvils with sapphire support seats allows for heating and cooling of the high-pressure area on the order of a few tens of seconds. This device is then used to scan the phasemore » diagram of the sample by oscillating the temperature while continuously increasing the externally applied pressure and collecting in situ time-resolved powder diffraction images. In the pressure-temperature range covered in this experiment, the gadolinium sample is observed in its hcp, αSm, and dhcp phases. Under this temperature cycling, the hcp → αSm transition proceeds in discontinuous steps at points along the expected phase boundary. From these measurements (representing only one hour of synchrotron x-ray collection time), a single-experiment equation of state and phase diagram of each phase of gadolinium is presented for the range of 0–10 GPa and 300–650 K.« less

Simulations of the synthesis of boron-nitride nanostructures in a hot, high pressure gas volume† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c8sc00667a

PubMed Central

Han, Longtao; Irle, Stephan; Nakai, Hiromi

2018-01-01

We performed nanosecond timescale computer simulations of clusterization and agglomeration processes of boron nitride (BN) nanostructures in hot, high pressure gas, starting from eleven different atomic and molecular precursor systems containing boron, nitrogen and hydrogen at various temperatures from 1500 to 6000 K. The synthesized BN nanostructures self-assemble in the form of cages, flakes, and tubes as well as amorphous structures. The simulations facilitate the analysis of chemical dynamics and we are able to predict the optimal conditions concerning temperature and chemical precursor composition for controlling the synthesis process in a high temperature gas volume, at high pressure. We identify the optimal precursor/temperature choices that lead to the nanostructures of highest quality with the highest rate of synthesis, using a novel parameter of the quality of the synthesis (PQS). Two distinct mechanisms of BN nanotube growth were found, neither of them based on the root-growth process. The simulations were performed using quantum-classical molecular dynamics (QCMD) based on the density-functional tight-binding (DFTB) quantum mechanics in conjunction with a divide-and-conquer (DC) linear scaling algorithm, as implemented in the DC-DFTB-K code, enabling the study of systems as large as 1300 atoms in canonical NVT ensembles for 1 ns time. PMID:29780513

Cryogenic Field Measurement of Pr2Fe14B Undulator and Performance Enhancement Options at the NSLS-II

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanabe, T.; Chubar, O.; Harder, David A.

2009-09-27

Short period (14.5mm) hybrid undulator arrays composed of Praseodymium Iron Boron (Pr{sub 2}Fe{sub 14}B) magnets (CR53, NEOMAX, Inc.) and vanadium permendur poles have been fabricated at Brookhaven National Laboratory. Unlike Neodymium Iron Boron (Nd{sub 2}Fe{sub 14}B) magnets which exhibit spin reorientation at temperatures below 150K, PrFeB arrays monotonically increase performance with lower operating temperature. It opens up the posibility for use in operating a cryo-permanent magnet undulator (CPMU) in the range of 40K to 60K where very efficient cryocoolers are available. Magnetic flux density profiles were measured at various temperature ranges from room temperature down to liquid helium (LHe) usingmore » the Vertical Testing Facility (VTF) at the National Snchrotron Light Source-II (NSLS-II). Temperature variations of phase error have been characterized. In addition, we examined the use of textured Dysprosium (Dy) poles to replace permendur poles to obtain further improvement in performance.« less

Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride.

PubMed

Jungwirth, Nicholas R; Calderon, Brian; Ji, Yanxin; Spencer, Michael G; Flatté, Michael E; Fuchs, Gregory D

2016-10-12

We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from optically active defects distributed across an energy range that exceeds 500 meV. Spectrally resolved photon-correlation measurements verify single photon emission, even when multiple emission lines are simultaneously excited within the same h-BN flake. We also present a detailed study of the temperature-dependent line width, spectral energy shift, and intensity for two different zero-phonon lines centered at 575 and 682 nm, which reveals a nearly identical temperature dependence despite a large difference in transition energy. Our temperature-dependent results are well described by a lattice vibration model that considers piezoelectric coupling to in-plane phonons. Finally, polarization spectroscopy measurements suggest that whereas the 575 nm emission line is directly excited by 532 nm excitation, the 682 nm line is excited indirectly.

Impact of boron rich layer on performance degradation in boric acid diffused emitters for n-type crystalline Si solar cells

NASA Astrophysics Data System (ADS)

Singha, Bandana; Singh Solanki, Chetan

2018-01-01

Boron rich layer (BRL) formed beneath the borosilicate glass layer during p-type emitter formation is an undesirable phenomenon. It influences different cell parameters and can degrade the device performance. In this work, the device degradation study is done for different BRL thicknesses produced with different concentrations of the boric acid dopant source. The bulk carrier lifetime reduces to more than 75% and emitter saturation current density becomes more than 10-12 mA cm-2 for 60 nm of BRL thickness. The observed J sc and V oc values become zero for BRL thicknesses higher than 40 nm as seen in this work and the device properties could not be enhanced. So, higher thicknesses of BRL should be avoided.

Copper catalyzed oxidative coupling reactions for trifluoromethylselenolations--synthesis of R-SeCF3 compounds using air stable tetramethylammonium trifluoromethylselenate.

PubMed

Lefebvre, Quentin; Pluta, Roman; Rueping, Magnus

2015-03-14

The aerobic, room-temperature coupling of tetramethylammonium trifluoromethylselenate with readily available boronic acids, boronic esters, and terminal alkynes has been developed. The method permits direct access to valuable trifluoromethylselenoarenes and alkynes under mild conditions. A convenient one-pot reaction, a scale up procedure as well as an extension to perfluoroalkylselenates are also presented to further demonstrate the synthetic utility of this reaction.

Next generation of the self-consistent and environment-dependent Hamiltonian: Applications to various boron allotropes from zero- to three-dimensional structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tandy, P.; Yu, Ming; Leahy, C.

2015-03-28

An upgrade of the previous self-consistent and environment-dependent linear combination of atomic orbitals Hamiltonian (referred as SCED-LCAO) has been developed. This improved version of the semi-empirical SCED-LCAO Hamiltonian, in addition to the inclusion of self-consistent determination of charge redistribution, multi-center interactions, and modeling of electron-electron correlation, has taken into account the effect excited on the orbitals due to the atomic aggregation. This important upgrade has been subjected to a stringent test, the construction of the SCED-LCAO Hamiltonian for boron. It was shown that the Hamiltonian for boron has successfully characterized the electron deficiency of boron and captured the complex chemicalmore » bonding in various boron allotropes, including the planar and quasi-planar, the convex, the ring, the icosahedral, and the fullerene-like clusters, the two-dimensional monolayer sheets, and the bulk alpha boron, demonstrating its transferability, robustness, reliability, and predictive power. The molecular dynamics simulation scheme based on the Hamiltonian has been applied to explore the existence and the energetics of ∼230 compact boron clusters B{sub N} with N in the range from ∼100 to 768, including the random, the rhombohedral, and the spherical icosahedral structures. It was found that, energetically, clusters containing whole icosahedral B{sub 12} units are more stable for boron clusters of larger size (N > 200). The ease with which the simulations both at 0 K and finite temperatures were completed is a demonstration of the efficiency of the SCED-LCAO Hamiltonian.« less

Next generation of the self-consistent and environment-dependent Hamiltonian: Applications to various boron allotropes from zero- to three-dimensional structures

NASA Astrophysics Data System (ADS)

Tandy, P.; Yu, Ming; Leahy, C.; Jayanthi, C. S.; Wu, S. Y.

2015-03-01

An upgrade of the previous self-consistent and environment-dependent linear combination of atomic orbitals Hamiltonian (referred as SCED-LCAO) has been developed. This improved version of the semi-empirical SCED-LCAO Hamiltonian, in addition to the inclusion of self-consistent determination of charge redistribution, multi-center interactions, and modeling of electron-electron correlation, has taken into account the effect excited on the orbitals due to the atomic aggregation. This important upgrade has been subjected to a stringent test, the construction of the SCED-LCAO Hamiltonian for boron. It was shown that the Hamiltonian for boron has successfully characterized the electron deficiency of boron and captured the complex chemical bonding in various boron allotropes, including the planar and quasi-planar, the convex, the ring, the icosahedral, and the fullerene-like clusters, the two-dimensional monolayer sheets, and the bulk alpha boron, demonstrating its transferability, robustness, reliability, and predictive power. The molecular dynamics simulation scheme based on the Hamiltonian has been applied to explore the existence and the energetics of ˜230 compact boron clusters BN with N in the range from ˜100 to 768, including the random, the rhombohedral, and the spherical icosahedral structures. It was found that, energetically, clusters containing whole icosahedral B12 units are more stable for boron clusters of larger size (N > 200). The ease with which the simulations both at 0 K and finite temperatures were completed is a demonstration of the efficiency of the SCED-LCAO Hamiltonian.

Fabrication Of Carbon-Boron Reinforced Dry Polymer Matrix Composite Tape

NASA Technical Reports Server (NTRS)

Belvin, Harry L.; Cano, Roberto J.; Treasure, Monte; Shahood, Thomas W.

1999-01-01

Future generation aerospace vehicles will require specialized hybrid material forms for component structure fabrication. For this reason, high temperature composite prepregs in both dry and wet forms are being developed at NASA Langley Research Center (LaRC). In an attempt to improve compressive properties of carbon fiber reinforced composites, a hybrid carbon-boron tape was developed and used to fabricate composite laminates which were subsequently cut into flexural and compression specimens and tested. The hybrid material, given the designation HYCARB, was fabricated by modifying a previously developed process for the manufacture of dry polymer matrix composite (PMC) tape at LaRC. In this work, boron fibers were processed with IM7/LaRC(TradeMark)IAX poly(amide acid) solution-coated prepreg to form a dry hybrid tape for Automated Tow Placement (ATP). Boron fibers were encapsulated between two (2) layers of reduced volatile, low fiber areal weight poly(amide acid) solution-coated prepreg. The hybrid prepreg was then fully imidized and consolidated into a dry tape suitable for ATP. The fabrication of a hybrid boron material form for tow placement aids in the reduction of the overall manufacturing cost of boron reinforced composites, while realizing the improved compression strengths. Composite specimens were press-molded from the hybrid material and exhibited excellent mechanical properties.

Ambient Temperature Synthesis of High Enantiopurity N-Protected Peptidyl Ketones by Peptidyl Thiol Ester–Boronic Acid Cross-Coupling

PubMed Central

Yang, Hao; Li, Hao; Wittenberg, Rüdiger; Egi, Masahiro; Huang, Wenwei; Liebeskind, Lanny S.

2009-01-01

α-Amino acid thiol esters derived from N-protected mono-, di-, and tripeptides couple with aryl, π-electron-rich heteroaryl, or alkenyl boronic acids in the presence of stoichiometric Cu(I) thiophene-2-carboxylate (CuTC) and catalytic Pd2(dba)3/triethylphosphite to generate the corresponding N-protected peptidyl ketones in good to excellent yields and in high enantiopurity. Triethylphosphite plays a key role as a supporting ligand by mitigating an undesired palladium-catalyzed decarbonylation-β-elimination of the α-amino thiol esters. The peptidyl ketone synthesis proceeds at room temperature under non-basic conditions and demonstrates a high tolerance to functionality. PMID:17263394

Elastic deformation of helical-conical boron nitride nanotubes

NASA Astrophysics Data System (ADS)

Xu, F. F.; Bando, Y.; Golberg, D.; Ma, R. Z.; Li, Y. B.; Tang, C. C.

2003-08-01

Boron nitride nanotubes with hollow conical-helix geometry have exhibited striking flexibility and elasticity comparable to metals. During an electron-beam induced deformation at room temperature, the nanotubes can be bent by a maximum angle as high as 180° and then retrieve the starting morphology without any evidence of structural failure. The outstanding low-temperature elasticity in this nano-material is interpreted by a theoretical model, displaying deformation processes dominated by slide of filaments along with changes in apex angles stepwise. The specific tubular geometry is believed to take advantages of both high stiffness and extraordinary flexibility of BN filaments, and easiness of interlayer slide in graphitic structure, hence leading to high resistance to fracture.

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

2018-05-01

Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

Measurement of the time-temperature dependent dynamic mechanical properties of boron/aluminum composites

NASA Technical Reports Server (NTRS)

Dicarlo, J. A.; Maisel, J. E.

1978-01-01

A flexural vibration test and associated equipment were developed to accurately measure the low strain dynamic modulus and damping of composite materials from -200 C to over 500 C. The basic test method involves the forced vibration of composite bars at their resonant free-free flexural modes in a high vacuum cryostat furnace. The accuracy of these expressions and the flexural test was verified by dynamic moduli and damping capacity measurements on 50 fiber volume percent boron/aluminum (B/Al) composites vibrating near 2000 Hz. The phase results were summarized to permit predictions of the B/Al dynamic behavior as a function of frequency, temperature, and fiber volume fraction.

Multiple doping of silicon-germanium alloys for thermoelectric applications

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre; Vining, Cronin B.; Borshchevsky, Alex

1989-01-01

It is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior.

A facile method to synthesize boron-doped Ni/Fe alloy nano-chains as electrocatalyst for water oxidation

NASA Astrophysics Data System (ADS)

Yang, Yisu; Zhuang, Linzhou; Lin, Rijia; Li, Mengran; Xu, Xiaoyong; Rufford, Thomas E.; Zhu, Zhonghua

2017-05-01

We report a novel magnetic field assisted chemical reduction method for the synthesis of boron-doped Ni/Fe nano-chains as promising catalysts for the oxygen evolution reaction (OER). The boron-doped Ni/Fe nano-chains were synthesised in a one step process at room temperature using NaBH4 as a reducing agent. The addition of boron reduced the magnetic moment of the intermediate synthesis products and produced nano-chains with a high specific surface area of 73.4 m2 g-1. The boron-doped Ni/Fe nano-chains exhibited catalytic performance superior to state-of-the-art Ba0.5Sr0.5Co0.8Fe0.2O3-δ perovskite and RuO2 noble metal oxide catalysts. The mass normalized activity of the boron-doped Ni/Fe nano-chains measured at an overpotential of 0.35 V was 64.0 A g-1, with a Tafel slope of only 40 mV dec-1. The excellent performance of the boron-doped Ni/Fe nano-chains can be attributed to the uniform elemental distribution and highly amorphous structure of the B-doped nano-chains. These results provide new insights into the effect of doping transition-metal based OER catalysts with non-metallic elements. The study demonstrates a facile approach to prepare transition metal nano-chains using magnetic field assisted chemical reduction method as cheap and highly active catalysts for electrochemical water oxidation.

The Analysis and Modeling of Phase Stability and Multiphase Designs in High Temperature Refractory Metal-Silicon-Boron Alloys

DTIC Science & Technology

2009-01-27

high temperature mechanical properties , it was confirmed that the three phase eutectic structure exhibited exceptionally high strength and creep...microstructurc constituent, offer an attractive property balance of high melting temperature, oxidation resistance and useful high temperature mechanical ...design of new multiphase high-temperature alloys with balanced environmental and mechanical properties . 15. SUBJECT TERMS Phase Stability, Alloying

Ultrahigh-Temperature Regeneration of Long Period Gratings (LPGs) in Boron-Codoped Germanosilicate Optical Fibre

PubMed Central

Liu, Wen; Cook, Kevin; Canning, John

2015-01-01

The regeneration of UV-written long period gratings (LPG) in boron-codoped germanosilicate “W” fibre is demonstrated and studied. They survive temperatures over 1000 °C. Compared with regenerated FBGs fabricated in the same type of fibre, the evolution curves of LPGs during regeneration and post-annealing reveal even more detail of glass relaxation. Piece-wise temperature dependence is observed, indicating the onset of a phase transition of glass in the core and inner cladding at ~500 °C and ~250 °C, and the melting of inner cladding between 860 °C and 900 °C. An asymmetric spectral response with increasing and decreasing annealing temperature points to the complex process dependent material system response. Resonant wavelength tuning by adjusting the dwell temperature at which regeneration is undertaken is demonstrated, showing a shorter resonant wavelength and shorter time for stabilisation with higher dwell temperatures. All the regenerated LPGs are nearly strain-insensitive and cannot be tuned by applying loads during annealing as done for regenerated FBGs. PMID:26307991

Characterization of individual straight and kinked boron carbide nanowires

NASA Astrophysics Data System (ADS)

Cui, Zhiguang

Boron carbides represent a class of ceramic materials with p-type semiconductor natures, complex structures and a wide homogeneous range of carbon compositions. Bulk boron carbides have long been projected as promising high temperature thermoelectric materials, but with limited performance. Bringing the bulk boron carbides to low dimensions (e.g., nanowires) is believed to be an option to enhance their thermoelectric performance because of the quantum size effects. However, the fundamental studies on the microstructure-thermal property relation of boron carbide nanowires are elusive. In this dissertation work, systematic structural characterization and thermal conductivity measurement of individual straight and kinked boron carbide nanowires were carried out to establish the true structure-thermal transport relation. In addition, a preliminary Raman spectroscopy study on identifying the defects in individual boron carbide nanowires was conducted. After the synthesis of single crystalline boron carbide nanowires, straight nanowires accompanied by the kinked ones were observed. Detailed structures of straight boron carbide nanowires have been reported, but not the kinked ones. After carefully examining tens of kinked nanowires utilizing Transmission Electron Microscopy (TEM), it was found that they could be categorized into five cases depending on the stacking faults orientations in the two arms of the kink: TF-TF, AF-TF, AF-AF, TF-IF and AF-IF kinks, in which TF, AF and IF denotes transverse faults (preferred growth direction perpendicular to the stacking fault planes), axial faults (preferred growth direction in parallel with the stacking fault planes) and inclined faults (preferred growth direction neither perpendicular to nor in parallel with the stacking fault planes). Simple structure models describing the characteristics of TF-TF, AF-TF, AF-AF kinked nanowires are constructed in SolidWorks, which help to differentiate the kinked nanowires viewed from the zone axes where stacking faults are invisible. In collaboration with the experts in the field of thermal property characterization of one dimensional nanostructures, thermal conductivities of over 60 nanowires including both straight and kinked ones have been measured in the temperature range of 20 - 420 K and the parameters (i.e., carbon contents, diameters, stacking faults densities/orientations and kinks) affecting the phonon transport were explored. The results disclose strong carbon content and diameter dependence of thermal conductivities of boron carbide nanowires, which decreases as lowering the carbon content and diameter. Stacking fault orientations do modulate the phonon transport (kappaTF < kappa AF), while stacking fault densities seems to only have obvious effects on phonon transport when meeting certain threshold ( 39%). The most interesting discovery is significant reduction of thermal conductivity (15% - 40%) in kinked boron carbide nanowires due to phonon mode conversions and scattering at the kink site. Last but not least, micro-Raman spectroscopy study on individual boron carbide nanowires has been performed for the first time, to the best of our knowledge. Based on the preliminary data, it is found that the stacking fault orientations have no apparent effect on the Raman scattering, but the stacking fault densities do. In addition, up as the size going down to nanoscale, some Raman modes are inactive while some new ones show up, which is largely ascribed to the quantum confinement effects. One more important finding is that the carbon content also plays important role in the Raman scattering of boron carbide nanowires in the low frequency region (< 600 cm-1), which mainly comes from the 3-atom chains (C-B-C or C-B-B).

Strength advantages of chemically polished boron fibers before and after reaction with aluminum

NASA Technical Reports Server (NTRS)

Dicarlo, J. A.; Smith, R. J.

1982-01-01

In order to determine their strength potential, the fracture properties of different types of commercial boron fibers were measured before and after application of secondary strengthening treatments. The principal treatments employed were a slight chemical polish, which removed low strength surface flaws, and a heat treatment in oxygen, which contracted the fibers and thereby compressed intrinsic bulk flaws. Those fiber types most significantly strengthened were 200 to 400 micrometers (8 to 16 mil) diameter boron on tungsten fibers produced in a single chemical vapor deposition reactor. The slight polish increased average tensile strenghts from 3.4 to 4.4 CN/m2 (500 to 640 ksi) and reduced coefficients of variation from about 15 to 3 percent. The oxygen heat treatment plus slight polish further improved average strengths to 5.5 GN/m2 (800 ksi) with coefficients near 3 percent. To ascertain whether these excellent properties could be retained after fabrication of B/Al composites, as produced and polished 203 micrometers (8 mil) fibers were thinly coated with aluminum, heat treated at B/Al fabrication temperatures, and then tested in tension and flexure at room temperature. The pre-polished fibers were observed to retain their superior strengths to higher temperatures than the as-produced fibers even though both were subjected to the same detrimental reaction with aluminum.

Evaluation of a boron-nitrogen, phosphate-free fire-retardant treatment. Part II, Testing of small clear specimens per ASTM Standard D 5664-95, Methods A and B

Treesearch

Jerrold E. Winandy; Douglas Herdman

2003-01-01

The objective of this work was to evaluate the effects of a new boron-nitrogen, phosphate-free fire-retardant (FR) formulation on several mechanical properties of FR-treated wood and to assess the potential of this treatment for in-service thermal-induced strength loss resulting from exposure to high temperature. Fire-retardant-treated and untreated small clear...

Evaluation of a boron-nitrogen, phosphate-free fire-retardant treatment. Part I, Testing of Douglas-fir plywood per ASTM Standard D 5516-96

Treesearch

Jerrold E. Winandy; Michael J. Richards

2003-01-01

The objective of this work was to evaluate (a) the effects of a new boron– nitrogen, phosphate-free fire-retardant (FR) formulation on the initial strength of Douglas-fir AB-grade plywood and (b) the potential of this FR treatment to experience subsequent thermal degradation In-service when exposed to elevated temperatures. Test Method ASTM D 5516 was generally...

METHOD OF PROTECTING TANTALUM CRUCIBLES AGAINST REACTION WITH MOLTEN URANIUM

DOEpatents

Feder, H.M.; Chellew, N.R.

1960-08-16

Tantalum crucibles against reaction with molten uranium by contacting the surfaces to be protected with metallic boron (as powder, vapor, or suspension in a liquid-volatilenonreacting medium, such as acetone and petroleum oil) at about 1800 deg C in vacuum, discontinuing contact with the boron, and heating the crucibles to a temperature of between 1800 aad 2000 deg C, whereby the tantalum boride formed in the first heating step is converted to tantalum monoboride.

Edge-Hydroxylated Boron Nitride Nanosheets as an Effective Additive to Improve the Thermal Response of Hydrogels.

PubMed

Xiao, Feng; Naficy, Sina; Casillas, Gilberto; Khan, Majharul H; Katkus, Tomas; Jiang, Lei; Liu, Huakun; Li, Huijun; Huang, Zhenguo

2015-11-25

Upon flowing hot steam over hexagonal boron nitride (h-BN) bulk powder, efficient exfoliation and hydroxylation of BN occur simultaneously. Through effective hydrogen bonding with water and N-isopropylacrylamide, edge-hydroxylated BN nanosheets dramatically improve the dimensional change and dye release of this temperature-sensitive hydrogel and thereby enhance its efficacy in bionic, soft robotic, and drug-delivery applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of helium embrittlement in boron doped EUROFER97 steels

NASA Astrophysics Data System (ADS)

Gaganidze, E.; Petersen, C.; Aktaa, J.

2009-04-01

To simulate helium effects in Reduced Activation Ferritic/Martensitic steels, experimental heats ADS2, ADS3 and ADS4 with the basic composition of EUROFER97 (9%Cr-WVTa) were doped with different contents of natural boron and separated 10B-isotope (0.008-0.112 wt.%) and irradiated in High Flux Reactor (HFR) Petten up to 16.3 dpa at 250-450 °C and in Bor-60 fast reactor in Dimitrovgrad up to 31.8 dpa at 332-338 °C. The embrittlement and hardening are investigated by instrumented Charpy-V tests with subsize specimens. Complete burn-up of 10B isotope under neutron irradiation in HFR Petten led to generation of 84, 432 and 5580 appm He and partial boron-to-helium transformation in Bor-60 led to generation of 9, 46, 880 appm He in ADS2, ADS3 and ADS4 heats, respectively. At low irradiation temperatures Tirr ⩽ 340 °C the boron doped steels show progressive embrittlement with increasing helium amount. Irradiation induced DBTT shift of EUROFER97 based heat doped with 1120 wppm separated 10B isotope could not be quantified due to large embrittlement found in the investigated temperature range. At Tirr ⩽ 340 °C helium induced extra embrittlement is attributed to material hardening induced by helium bubbles and described in terms of phenomenological model.

Determination of boron in produced water using the carminic acid assay.

PubMed

Floquet, Cedric F A; Sieben, Vincent J; MacKay, Bruce A; Mostowfi, Farshid

2016-04-01

Using the carminic acid assay, we determined the concentration of boron in oilfield waters. We investigated the effect of high concentrations of salts and dissolved metals on the assay performance. The influence of temperature, development time, reagent concentration, and water volume was studied. Ten produced and flowback water samples of different origins were measured, and the method was successfully validated against ICP-MS measurements. In water-stressed regions, produced water is a potential source of fresh water for irrigation, industrial applications, or consumption. Therefore, boron concentration must be determined and controlled to match the envisaged waste water reuse. Fast, precise, and onsite measurements are needed to minimize errors introduced by sample transportation to laboratories. We found that the optimum conditions for our application were a 5:1 mixing volume ratio (reagent to sample), a 1 g L(-1) carminic acid concentration in 99.99% sulfuric acid, and a 30 min reaction time at ambient temperature (20 °C to 23 °C). Absorption values were best measured at 610 nm and 630 nm and baseline corrected at 865 nm. Under these conditions, the sensitivity of the assay to boron was maximized while its cross-sensitivity to dissolved titanium, iron, barium and zirconium was minimized, alleviating the need for masking agents and extraction methods. Copyright © 2015 Elsevier B.V. All rights reserved.

Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

NASA Astrophysics Data System (ADS)

Heilmann, M.; Bashouti, M.; Riechert, H.; Lopes, J. M. J.

2018-04-01

Van der Waals heterostructures comprising of hexagonal boron nitride and graphene are promising building blocks for novel two-dimensional devices such as atomically thin transistors or capacitors. However, demonstrators of those devices have been so far mostly fabricated by mechanical assembly, a non-scalable and time-consuming method, where transfer processes can contaminate the surfaces. Here, we investigate a direct growth process for the fabrication of insulating hexagonal boron nitride on high quality epitaxial graphene using plasma assisted molecular beam epitaxy. Samples were grown at varying temperatures and times and studied using atomic force microscopy, revealing a growth process limited by desorption at high temperatures. Nucleation was mostly commencing from morphological defects in epitaxial graphene, such as step edges or wrinkles. Raman spectroscopy combined with x-ray photoelectron measurements confirm the formation of hexagonal boron nitride and prove the resilience of graphene against the nitrogen plasma used during the growth process. The electrical properties and defects in the heterostructures were studied with high lateral resolution by tunneling current and Kelvin probe force measurements. This correlated approach revealed a nucleation apart from morphological defects in epitaxial graphene, which is mediated by point defects. The presented results help understanding the nucleation and growth behavior during van der Waals epitaxy of 2D materials, and point out a route for a scalable production of van der Waals heterostructures.

Hard magnetic property enhancement of Co{sub 7}Hf-based ribbons by boron doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, H. W.; Liao, M. C.; Shih, C. W.

2014-11-10

Hard magnetic property enhancement of melt spun Co{sub 88}Hf{sub 12} ribbons by boron doping is demonstrated. B-doping could not only remarkably enhance the magnetic properties from energy product ((BH){sub max}) of 2.6 MGOe and intrinsic coercivity ({sub i}H{sub c}) of 1.5 kOe for B-free Co{sub 88}Hf{sub 12} ribbons to (BH){sub max} = 7.7 MGOe and {sub i}H{sub c} = 3.1 kOe for Co{sub 85}Hf{sub 12}B{sub 3} ribbons but also improve the Curie temperature (T{sub C}) of 7:1 phase. The (BH){sub max} value achieved in Co{sub 85}Hf{sub 12}B{sub 3} ribbons is the highest in Co-Hf alloy ribbons ever reported, which is about 15% higher thanmore » that of Co{sub 11}Hf{sub 2}B ribbons spun at 16 m/s [M. A. McGuire, O. Rios, N. J. Ghimire, and M. Koehler, Appl. Phys. Lett. 101, 202401 (2012)]. The structural analysis confirms that B enters the orthorhombic Co{sub 7}Hf (7:1) crystal structure as interstitial atoms, forming Co{sub 7}HfB{sub x}, in the as-spun state. Yet B may diffuse out from the 7:1 phase after post-annealing, leading to the reduction of Curie temperature and the magnetic properties. The uniformly refined microstructure with B-doping results in high remanence (B{sub r}) and improves the squareness of demagnetization curve. The formation of interstitial-atom-modified Co{sub 7}HfB{sub x} phase and the microstructure refinement are the main reasons to give rise to the enhancement of hard magnetic properties in the B-containing Co{sub 7}Hf-based ribbons.« less

Boron nitride encapsulated graphene infrared emitters

NASA Astrophysics Data System (ADS)

Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R.

2016-03-01

The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

Rapid feedback of chemical vapor deposition growth mechanisms by operando X-ray diffraction

DOE PAGES

Martin, Aiden A.; Depond, Philip J.; Bagge-Hansen, Michael; ...

2018-03-14

An operando x-ray diffraction system is presented for elucidating optimal laser assisted chemical vapor deposition growth conditions. The technique is utilized to investigate deposition dynamics of boron-carbon materials using trimethyl borate precursor. Trimethyl borate exhibits vastly reduced toxicological and flammability hazards compared to existing precursors, but has previously not been applied to boron carbide growth. Crystalline boron-rich carbide material is produced in a narrow growth regime on addition of hydrogen during the growth phase at high temperature. Finally, the use of the operando x-ray diffraction system allows for the exploration of highly nonequilibrium conditions and rapid process control, which aremore » not possible using ex situ diagnostics.« less

Rapid feedback of chemical vapor deposition growth mechanisms by operando X-ray diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, Aiden A.; Depond, Philip J.; Bagge-Hansen, Michael

An operando x-ray diffraction system is presented for elucidating optimal laser assisted chemical vapor deposition growth conditions. The technique is utilized to investigate deposition dynamics of boron-carbon materials using trimethyl borate precursor. Trimethyl borate exhibits vastly reduced toxicological and flammability hazards compared to existing precursors, but has previously not been applied to boron carbide growth. Crystalline boron-rich carbide material is produced in a narrow growth regime on addition of hydrogen during the growth phase at high temperature. Finally, the use of the operando x-ray diffraction system allows for the exploration of highly nonequilibrium conditions and rapid process control, which aremore » not possible using ex situ diagnostics.« less

The Effect of Time, Temperature and Composition on Boron Carbide Synthesis by Sol-gel Method

NASA Astrophysics Data System (ADS)

Hadian, A. M.; Bigdeloo, J. A.

2008-02-01

To minimize free carbon residue in the boron carbide (B4C) powder, a modified sol-gel process is performed where the starting materials as boric acid and citric acid compositions are adjusted. Because of boron loss in the form of B2O2(g) during the reduction reaction of the stoichiometric starting composition, the final B4C powders contain carbon residues. Thus, an excess H3BO3 is used in the reaction to compensate the loss and to obtain stoichiometric powders. Parameters of production have been determined using x-ray diffraction analysis and particle size analyses. The synthesized B4C powder using an excess boric acid composition shows no trace of carbon.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanov, Yuri, E-mail: yufi55@mail.ru; National Research Tomsk State University, 36 Lenina Str., Tomsk, 634050; National Research Tomsk Polytechnic University, 30 Lenina Str., Tomsk, 634050

The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm{sup 2}, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electronmore » beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surface layer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardness and crack resistance. Research results show that the melting and subsequent rapid solidification of the surface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance.« less

[Preparation and photocatalytic activity of boron doped CeO2/TiO2 mixed oxides].

PubMed

Tang, Xin-hu; Wei, Chao-hai; Liang, Jie-rong; Wang, Bo-guang

2006-07-01

Boron doped CeO2/TiO2 mixed oxides photocatalysts were prepared by adding boric acid and cerous nitrate during the hydrolyzation of titanium trichloride and tetrabutyl titanate. XRD, UV-Vis DRS and XPS techniques were used to characterize the crystalline structure, light absorbing ability and the chemical state of Boron element in the photocatalyst sample. The photocatalytic activities were evaluated by monitoring the degradation of acid red B under UV irradiation. These results indicate that the wavelengths at adsorbing edge are affected by the content of cerous nitrate and the maximum absorption wavelength is about 481 nm when the mole ratio of Ce/Ti is 1.0. For higher dosage of Cerium, the absorbance edge shifts to blue slightly. The prepared photocatalyst is composed of anatase TiO2 and cubic CeO2 when calcined at 500 degrees C. An increase in the calcination temperature transforms the crystalline structure of the titanium oxides from anatase to rutile, and has no obvious influence on crystalline structure of CeO2 but crystallites growth up. The absorbance edge decreases drastically with the increase of calcination temperature. With a view to the stability of photocatalyst and utilization of sun energy, 500 degrees C of calcination temperature is recommended. The XP spectrum for B1s exhibits that only a few boron ions dope into titania and ceria matrix, others exist in B2O3. The photocatalytic activity increases with increase of cerous nitrate dosage, and decreases drastically due to higher dosage (the mol ratio of Ce/Ti > 0.5). After 10 min UV irradiation, 96% of acid red B is degraded completely over photocatalyst under optimum reaction condition.

Boron isotope fractionation in magma via crustal carbonate dissolution

PubMed Central

Deegan, Frances M.; Troll, Valentin R.; Whitehouse, Martin J.; Jolis, Ester M.; Freda, Carmela

2016-01-01

Carbon dioxide released by arc volcanoes is widely considered to originate from the mantle and from subducted sediments. Fluids released from upper arc carbonates, however, have recently been proposed to help modulate arc CO2 fluxes. Here we use boron as a tracer, which substitutes for carbon in limestone, to further investigate crustal carbonate degassing in volcanic arcs. We performed laboratory experiments replicating limestone assimilation into magma at crustal pressure-temperature conditions and analysed boron isotope ratios in the resulting experimental glasses. Limestone dissolution and assimilation generates CaO-enriched glass near the reaction site and a CO2-dominated vapour phase. The CaO-rich glasses have extremely low δ11B values down to −41.5‰, reflecting preferential partitioning of 10B into the assimilating melt. Loss of 11B from the reaction site occurs via the CO2 vapour phase generated during carbonate dissolution, which transports 11B away from the reaction site as a boron-rich fluid phase. Our results demonstrate the efficacy of boron isotope fractionation during crustal carbonate assimilation and suggest that low δ11B melt values in arc magmas could flag shallow-level additions to the subduction cycle. PMID:27488228

Nanostructured Boron Nitride With High Water Dispersibility For Boron Neutron Capture Therapy

PubMed Central

Singh, Bikramjeet; Kaur, Gurpreet; Singh, Paviter; Singh, Kulwinder; Kumar, Baban; Vij, Ankush; Kumar, Manjeet; Bala, Rajni; Meena, Ramovatar; Singh, Ajay; Thakur, Anup; Kumar, Akshay

2016-01-01

Highly water dispersible boron based compounds are innovative and advanced materials which can be used in Boron Neutron Capture Therapy for cancer treatment (BNCT). Present study deals with the synthesis of highly water dispersible nanostructured Boron Nitride (BN). Unique and relatively low temperature synthesis route is the soul of present study. The morphological examinations (Scanning/transmission electron microscopy) of synthesized nanostructures showed that they are in transient phase from two dimensional hexagonal sheets to nanotubes. It is also supported by dual energy band gap of these materials calculated from UV- visible spectrum of the material. The theoretically calculated band gap also supports the same (calculated by virtual nano lab Software). X-ray diffraction (XRD) analysis shows that the synthesized material has deformed structure which is further supported by Raman spectroscopy. The structural aspect of high water disperse ability of BN is also studied. The ultra-high disperse ability which is a result of structural deformation make these nanostructures very useful in BNCT. Cytotoxicity studies on various cell lines (Hela(cervical cancer), human embryonic kidney (HEK-293) and human breast adenocarcinoma (MCF-7)) show that the synthesized nanostructures can be used for BNCT. PMID:27759052

Identification of limiting case between DBA and SBDBA (CL break area sensitivity): A new model for the boron injection system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gonzalez Gonzalez, R.; Petruzzi, A.; D'Auria, F.

2012-07-01

Atucha-2 is a Siemens-designed PHWR reactor under construction in the Republic of Argentina. Its geometrical complexity and (e.g., oblique Control Rods, Positive Void coefficient) required a developed and validated complex three dimensional (3D) neutron kinetics (NK) coupled thermal hydraulic (TH) model. Reactor shut-down is obtained by oblique CRs and, during accidental conditions, by an emergency shut-down system (JDJ) injecting a highly concentrated boron solution (boron clouds) in the moderator tank, the boron clouds reconstruction is obtained using a CFD (CFX) code calculation. A complete LBLOCA calculation implies the application of the RELAP5-3D{sup C} system code. Within the framework of themore » third Agreement 'NA-SA - Univ. of Pisa' a new RELAP5-3D control system for the boron injection system was developed and implemented in the validated coupled RELAP5-3D/NESTLE model of the Atucha 2 NPP. The aim of this activity is to find out the limiting case (maximum break area size) for the Peak Cladding Temperature for LOCAs under fixed boundary conditions. (authors)« less

Nanostructured Boron Nitride With High Water Dispersibility For Boron Neutron Capture Therapy

NASA Astrophysics Data System (ADS)

Singh, Bikramjeet; Kaur, Gurpreet; Singh, Paviter; Singh, Kulwinder; Kumar, Baban; Vij, Ankush; Kumar, Manjeet; Bala, Rajni; Meena, Ramovatar; Singh, Ajay; Thakur, Anup; Kumar, Akshay

2016-10-01

Highly water dispersible boron based compounds are innovative and advanced materials which can be used in Boron Neutron Capture Therapy for cancer treatment (BNCT). Present study deals with the synthesis of highly water dispersible nanostructured Boron Nitride (BN). Unique and relatively low temperature synthesis route is the soul of present study. The morphological examinations (Scanning/transmission electron microscopy) of synthesized nanostructures showed that they are in transient phase from two dimensional hexagonal sheets to nanotubes. It is also supported by dual energy band gap of these materials calculated from UV- visible spectrum of the material. The theoretically calculated band gap also supports the same (calculated by virtual nano lab Software). X-ray diffraction (XRD) analysis shows that the synthesized material has deformed structure which is further supported by Raman spectroscopy. The structural aspect of high water disperse ability of BN is also studied. The ultra-high disperse ability which is a result of structural deformation make these nanostructures very useful in BNCT. Cytotoxicity studies on various cell lines (Hela(cervical cancer), human embryonic kidney (HEK-293) and human breast adenocarcinoma (MCF-7)) show that the synthesized nanostructures can be used for BNCT.

Modeling of Laser Vaporization and Plume Chemistry in a Boron Nitride Nanotube Production Rig

NASA Technical Reports Server (NTRS)

Gnoffo, Peter A.; Fay, Catharine C.

2012-01-01

Flow in a pressurized, vapor condensation (PVC) boron nitride nanotube (BNNT) production rig is modeled. A laser provides a thermal energy source to the tip of a boron ber bundle in a high pressure nitrogen chamber causing a plume of boron-rich gas to rise. The buoyancy driven flow is modeled as a mixture of thermally perfect gases (B, B2, N, N2, BN) in either thermochemical equilibrium or chemical nonequilibrium assuming steady-state melt and vaporization from a 1 mm radius spot at the axis of an axisymmetric chamber. The simulation is intended to define the macroscopic thermochemical environment from which boron-rich species, including nanotubes, condense out of the plume. Simulations indicate a high temperature environment (T > 4400K) for elevated pressures within 1 mm of the surface sufficient to dissociate molecular nitrogen and form BN at the base of the plume. Modifications to Program LAURA, a finite-volume based solver for hypersonic flows including coupled radiation and ablation, are described to enable this simulation. Simulations indicate that high pressure synthesis conditions enable formation of BN vapor in the plume that may serve to enhance formation of exceptionally long nanotubes in the PVC process.

Boron isotope fractionation in magma via crustal carbonate dissolution

NASA Astrophysics Data System (ADS)

Deegan, Frances M.; Troll, Valentin R.; Whitehouse, Martin J.; Jolis, Ester M.; Freda, Carmela

2016-08-01

Carbon dioxide released by arc volcanoes is widely considered to originate from the mantle and from subducted sediments. Fluids released from upper arc carbonates, however, have recently been proposed to help modulate arc CO2 fluxes. Here we use boron as a tracer, which substitutes for carbon in limestone, to further investigate crustal carbonate degassing in volcanic arcs. We performed laboratory experiments replicating limestone assimilation into magma at crustal pressure-temperature conditions and analysed boron isotope ratios in the resulting experimental glasses. Limestone dissolution and assimilation generates CaO-enriched glass near the reaction site and a CO2-dominated vapour phase. The CaO-rich glasses have extremely low δ11B values down to -41.5‰, reflecting preferential partitioning of 10B into the assimilating melt. Loss of 11B from the reaction site occurs via the CO2 vapour phase generated during carbonate dissolution, which transports 11B away from the reaction site as a boron-rich fluid phase. Our results demonstrate the efficacy of boron isotope fractionation during crustal carbonate assimilation and suggest that low δ11B melt values in arc magmas could flag shallow-level additions to the subduction cycle.

Boron isotope fractionation in magma via crustal carbonate dissolution.

PubMed

Deegan, Frances M; Troll, Valentin R; Whitehouse, Martin J; Jolis, Ester M; Freda, Carmela

2016-08-04

Carbon dioxide released by arc volcanoes is widely considered to originate from the mantle and from subducted sediments. Fluids released from upper arc carbonates, however, have recently been proposed to help modulate arc CO2 fluxes. Here we use boron as a tracer, which substitutes for carbon in limestone, to further investigate crustal carbonate degassing in volcanic arcs. We performed laboratory experiments replicating limestone assimilation into magma at crustal pressure-temperature conditions and analysed boron isotope ratios in the resulting experimental glasses. Limestone dissolution and assimilation generates CaO-enriched glass near the reaction site and a CO2-dominated vapour phase. The CaO-rich glasses have extremely low δ(11)B values down to -41.5‰, reflecting preferential partitioning of (10)B into the assimilating melt. Loss of (11)B from the reaction site occurs via the CO2 vapour phase generated during carbonate dissolution, which transports (11)B away from the reaction site as a boron-rich fluid phase. Our results demonstrate the efficacy of boron isotope fractionation during crustal carbonate assimilation and suggest that low δ(11)B melt values in arc magmas could flag shallow-level additions to the subduction cycle.

Influence of Oxides on Microstructures and Mechanical Properties of High-Strength Steel Weld Joint

NASA Astrophysics Data System (ADS)

Cai, Yangchuan; Luo, Zhen; Huang, Zunyue; Zeng, Yida

2016-11-01

A comprehensive investigation was conducted into the effect of oxides on penetrations, microstructures and mechanical properties of BS700MC super steel weld bead. Boron oxide changed the penetration of weld bead by changing the Marangoni convection in the weld pool and contracting the welding arc. Chromium oxide only changed the Marangoni convection in the weld pool to increase the penetration of super steel. Thus, the super steel weld bead has higher penetration coated with flux boron oxide than that coated with chromium oxide. In other words, the activating flux TIG (A-TIG) welding with flux boron oxide has less welding heat input than the A-TIG welding with flux chromium oxide. As a result, on the one hand, there existed more fine and homogeneous acicular ferrites in the microstructure of welding heat-affected zone when the super steel was welded by A-TIG with flux boron oxide. Thus, the weld beads have higher value of low-temperature impact toughness. On the other hand, the softening degree of welding heat-affected zone, welded by A-TIG with flux boron oxide, will be decreased for the minimum value of welding heat input.

Investigation of the Microstructure of Laser-Arc Hybrid Welded Boron Steel

NASA Astrophysics Data System (ADS)

Son, Seungwoo; Lee, Young Ho; Choi, Dong-Won; Cho, Kuk-Rae; Shin, Seung Man; Lee, Youngseog; Kang, Seong-Hoon; Lee, Zonghoon

2018-05-01

The microstructure of boron steel for automotive driving shaft manufacturing after laser-arc hybrid welding was investigated. Laser-arc hybrid welding technology was applied to 3-mm-thick plates of boron steel, ST35MnB. The temperature distribution of the welding pool was analyzed using the finite element method, and the microstructure of the welded boron steel was characterized using optical microscopy and scanning and transmission electron microscopies. The microstructure of the weld joint was classified into the fusion zone, the heat-affected zone (HAZ), and the base material. At the fusion zone, the bainite grains exist in the martensite matrix and show directionality because of heat input from the welding. The HAZ is composed of smaller grains, and the hardness of the HAZ is greater than that of the fusion zone. We discuss that the measured grain size and the hardness of the HAZ originate from undissolved precipitates that retard the grain growth of austenite.

Eggshell membrane as a novel bio sorbent for remediation of boron from desalinated water.

PubMed

Al-Ghouti, Mohammad A; Khan, Mariam

2018-02-01

This study investigated the use of eggshell membrane (ESM) as a bio-sorbent and the effect of temperature, pH, and initial concentration on its efficiency. Furthermore, by altering the chemical composition, modified eggshell membrane (MESM) was prepared, and its efficiency was compared with the ESM. Results showed that the adsorption of boron preferred an acidic condition; pH 6 at 35 °C. In addition, the positive value of ΔH° suggested that the reaction favored endothermic pathway, while the negative value for ΔG° further suggested that the adsorption process was spontaneous. Furthermore, the ESM could adsorb 97% of boron, while MESM was able to adsorb 95%. From the Fourier transform infrared (FTIR), different functional groups were recorded on the surface of the ESM and MESM, and they played key role in the boron adsorption mechanisms. Linear Freundlich model was suggested to best describe the experimental data with 99.4% correlation coefficient. Copyright © 2017 Elsevier Ltd. All rights reserved.

Magnetic iron oxides in the cementation technology of the boron-containing radioactive waste

NASA Astrophysics Data System (ADS)

Fedotov, M. A.; Gorbunova, O. A.; Fedorova, O. V.; Folmanis, G. E.; Kovalenko, L. V.

2015-04-01

Two ways of synthesis of non-detachable dispersed particles of magnetic materials useful for the boron-containing waste cementation process regulation were developed. Powder XRD showed that the method of carbothermic recovery of nanoscale iron hydroxide allows obtaining a mixture of iron oxides with content of the magnetic phase up to 70%. Method of low-temperature hydrogen reduction of the raw materials allows obtaining various compositions of a-iron and iron oxides with the possibility to change the size of the final particles in a wide range. The possibility of using composites of magnetic iron oxides and metal oxide compositions instead of ferromagnetic rods with VEP of boron-containing liquid radioactive waste in the fluidized field was studied. It was shown that the use of fine and nano particles of the iron oxides in the pre-treatment of the boron-containing LRW increases the strength of the final compounds and accelerates the cement setting compounds from 13 to 5-9 days.

Preliminary study on preparation of BCNO phosphor particles using citric acid as carbon source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nuryadin, Bebeh W.; Pratiwi, Tripuspita; Faryuni, Irfana D.

A citric acid was used as a carbon source in the preparation of boron carbon oxy-nitride (BCNO) phosphor particles by a facile process. The preparation process was conducted at relatively low temperature 750 °C and at ambient pressure. The prepared BCNO phosphors showed a high photoluminescence (PL) performance at peak emission wavelength of 470 nm under excitation by a UV light 365 nm. The effects of carbon/boron and nitrogen/boron molar ratios on the PL properties were also investigated. The result showed that the emission spectra with a wavelength peak ranging from 444 nm to 496 nm can be obtained bymore » varying carbon/boron ratios from 0.1 to 0.9. In addition, the observations showed that the BCNO phosphor material has two excitation peaks located at the 365 nm (UV) and 420 nm (blue). Based on these observations, we believe that the citric acid derived BCNO phosphor particles can be a promising inexpensive material for phosphor conversion-based white LED.« less

Dry Process for Making Polyimide/ Carbon-and-Boron-Fiber Tape

NASA Technical Reports Server (NTRS)

Belvin, Harry L.; Cano, Roberto J.; Johnston, Norman J.; Marchello, Joseph M.

2003-01-01

A dry process has been invented as an improved means of manufacturing composite prepreg tapes that consist of high-temperature thermoplastic polyimide resin matrices reinforced with carbon and boron fibers. Such tapes are used (especially in the aircraft industry) to fabricate strong, lightweight composite-material structural components. The inclusion of boron fibers results in compression strengths greater than can be achieved by use of carbon fibers alone. The present dry process is intended to enable the manufacture of prepreg tapes (1) that contain little or no solvent; (2) that have the desired dimensions, fiber areal weight, and resin content; and (3) in which all of the fibers are adequately wetted by resin and the boron fibers are fully encapsulated and evenly dispersed. Prepreg tapes must have these properties to be useable in the manufacture of high-quality composites by automated tape placement. The elimination of solvent and the use of automated tape placement would reduce the overall costs of manufacturing.