Design and realization of high voltage disconnector condition monitoring system

NASA Astrophysics Data System (ADS)

Shi, Jinrui; Xu, Tianyang; Yang, Shuixian; Li, Buoyang

2017-08-01

The operation status of the high voltage disconnector directly affects the safe and stable operation of the power system. This article uses the wireless frequency hopping communication technology of the communication module to achieve the temperature acquisition of the switch contacts and high voltage bus, to introduce the current value of the loop in ECS, and judge the operation status of the disconnector by considering the ambient temperature, calculating the temperature rise; And through the acquisition of the current of drive motor in the process of switch closing and opening, and fault diagnosis of the disconnector by analyzing the change rule of the drive motor current, the condition monitoring of the high voltage disconnector is realized.

Wide-temperature integrated operational amplifier

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad (Inventor); Levanas, Greg (Inventor); Chen, Yuan (Inventor); Cozy, Raymond S. (Inventor); Greenwell, Robert (Inventor); Terry, Stephen (Inventor); Blalock, Benjamin J. (Inventor)

2009-01-01

The present invention relates to a reference current circuit. The reference circuit comprises a low-level current bias circuit, a voltage proportional-to-absolute temperature generator for creating a proportional-to-absolute temperature voltage (VPTAT), and a MOSFET-based constant-IC regulator circuit. The MOSFET-based constant-IC regulator circuit includes a constant-IC input and constant-IC output. The constant-IC input is electrically connected with the VPTAT generator such that the voltage proportional-to-absolute temperature is the input into the constant-IC regulator circuit. Thus the constant-IC output maintains the constant-IC ratio across any temperature range.

Electric field modulated ferromagnetism in ZnO films deposited at room temperature

NASA Astrophysics Data System (ADS)

Bu, Jianpei; Liu, Xinran; Hao, Yanming; Zhou, Guangjun; Cheng, Bin; Huang, Wei; Xie, Jihao; Zhang, Heng; Qin, Hongwei; Hu, Jifan

2018-04-01

The ZnO film deposited at room temperature, which is composed of the amorphous-phase background plus a few nanograins or nanoclusters (about 1-2 nm), exhibits room temperature ferromagnetism (FM). Such FM is found to be connected with oxygen vacancies. For the Ta/ZnO/Pt device based on the medium layer ZnO deposited at room temperature, the saturation magnetization not only is modulated between high and low resistive states by electric voltage with DC loop electric current but also increases/decreases through adjusting the magnitudes of positive/negative DC sweeping voltage. Meanwhile, the voltage-controlled conductance quantization is observed in Ta/ZnO/Pt, accompanying the voltage-controlled magnetization. However, the saturation magnetization of the Ta/ZnO/Pt device becomes smaller under positive electric voltage and returns in some extent under negative electric voltage, when the DC loop electric current is not applied.

Low-power low-voltage superior-order curvature corrected voltage reference

NASA Astrophysics Data System (ADS)

Popa, Cosmin

2010-06-01

A complementary metal oxide semiconductor (CMOS) voltage reference with a logarithmic curvature-correction will be presented. The first-order compensation is realised using an original offset voltage follower (OVF) block as a proportional to absolute temperature (PTAT) voltage generator, with the advantages of reducing the silicon area and of increasing accuracy by replacing matched resistors with matched transistors. The new logarithmic curvature-correction technique will be implemented using an asymmetric differential amplifier (ADA) block for compensating the logarithmic temperature dependent term from the first-order compensated voltage reference. In order to increase the circuit accuracy, an original temperature-dependent current generator will be designed for computing the exact type of the implemented curvature-correction. The relatively small complexity of the current squarer allows an important increasing of the circuit accuracy that could be achieved by increasing the current generator complexity. As a result of operating most of the MOS transistors in weak inversion, the original proposed voltage reference could be valuable for low-power applications. The circuit is implemented in 0.35 μm CMOS technology and consumes only 60μA for t = 25°C, being supplied at the minimal supply voltage V DD = 1.75V. The temperature coefficient of the reference voltage is 8.7 ppm/°C, while the line sensitivity is 0.75 mV/V for a supply voltage between 1.75 V and 7 V.

Experimental investigations of an AC pulse heating method for vehicular high power lithium-ion batteries at subzero temperatures

NASA Astrophysics Data System (ADS)

Zhu, Jiangong; Sun, Zechang; Wei, Xuezhe; Dai, Haifeng; Gu, Weijun

2017-11-01

Effect of the AC (alternating current) pulse heating method on battery SoH (state of health) for large laminated power lithium-ion batteries at low temperature is investigated experimentally. Firstly, excitation current frequencies, amplitudes, and voltage limitations on cell temperature evolution are studied. High current amplitudes facilitate the heat accumulation and temperature rise. Low frequency region serves as a good innovation to heat the battery because of the large impedance. Wide voltage limitations also enjoy better temperature evolution owing to the less current modulation, but the temperature difference originated from various voltage limitations attenuates due to the decrement of impedance resulting from the temperature rise. Experiments with the thermocouple-embedded cell manifest good temperature homogeneity between the battery surface and interior during the AC heating process. Secondly, the cell capacity, Direct Current resistance and Electrochemical Impedance Spectroscopy are all calibrated to assess the battery SoH after the hundreds of AC pulse heating cycles. Also, all cells are disassembled to investigate the battery internal morphology with the employment of Scanning Electron Microscope and Energy-Dispersive x-ray Spectroscopy techniques. The results indicate that the AC heating method does not aggravate the cell degradation even in the low frequency range (0.5 Hz) under the normal voltage protection limitation.

Pure spin current and phonon thermoelectric transport in a triangulene-based molecular junction.

PubMed

Wang, Qiang; Li, Jianwei; Nie, Yihang; Xu, Fuming; Yu, Yunjin; Wang, Bin

2018-06-13

The experimental synthesis and characterization of enigmatic triangulene were reported for the first time recently. Based on this enigmatic molecule, we proposed a triangulene-based molecular junction and presented first principles calculations to investigate the electron and phonon thermoelectric transport properties. Numerical results show that the spin polarized electric transport properties of the triangulene-based molecular junction can be adjusted effectively by bias voltage and gate voltage. Through varying the gate voltage applied on the triangulene molecule, the system can exhibit a perfect spin filter effect. When a temperature gradient is applied between the two leads, spin up current and spin down current flow along opposite directions in the system simultaneously. Thus pure spin current can be obtained on a large scale by changing the temperature, temperature gradient, and gate voltage. When the phonon vibration effect is considered in thermal transport, the figure of merit is suppressed distinctively especially when the temperature is within the 10 K < T < 100 K range. More importantly, a large spin figure of merit can be achieved accompanied by a small charge figure of merit by adjusting the temperature, gate voltage and chemical potential in a wide range, which indicates a favorable application prospect of the triangulene-based molecular junction as a spin calorigenic device.

Characterization of Low Noise, Precision Voltage Reference REF5025-HT Under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2010-01-01

The performance of Texas Instruments precision voltage reference REF5025-HT was assessed under extreme temperatures. This low noise, 2.5 V output chip is suitable for use in high temperature down-hole drilling applications, but no data existed on its performance at cryogenic temperatures. The device was characterized in terms of output voltage and supply current at different input voltage levels as a function of temperature between +210 C and -190 C. Line and load regulation characteristics were also established at six load levels and at different temperatures. Restart capability at extreme temperatures and the effects of thermal cycling, covering the test temperature range, on its operation and stability were also investigated. Under no load condition, the voltage reference chip exhibited good stability in its output over the temperature range of -50 C to +200 C. Outside that temperature range, output voltage did change as temperature was changed. For example, at the extreme temperatures of +210 C and - 190 C, the output level dropped to 2.43 V and 2.32 V, respectively as compared to the nominal value of 2.5 V. At cryogenic test temperatures of -100 C and -150 C the output voltage dropped by about 20%. The quiescent supply current of the voltage reference varied slightly with temperature but remained close to its specified value. In terms of line regulation, the device exhibited excellent stability between -50 C and +150 C over the entire input voltage range and load levels. At the other test temperatures, however, while line regulation became poor at cryogenic temperatures of -100 C and below, it suffered slight degradation at the extreme high temperature but only at the high load level of 10 mA. The voltage reference also exhibited very good load regulation with temperature down to -100 C, but its output dropped sharply at +210 C only at the heavy load of 10 mA. The semiconductor chip was able restart at the extreme temperatures of -190 C and +210 C, and the limited thermal cycling did not influence its characteristics and had no impact on its packaging as no structural or physical damage was observed.

Single-contact tunneling thermometry

DOEpatents

Maksymovych, Petro

2016-02-23

A single-contact tunneling thermometry circuit includes a tunnel junction formed between two objects. Junction temperature gradient information is determined based on a mathematical relationship between a target alternating voltage applied across the junction and the junction temperature gradient. Total voltage measured across the junction indicates the magnitude of the target alternating voltage. A thermal gradient is induced across the junction. A reference thermovoltage is measured when zero alternating voltage is applied across the junction. An increasing alternating voltage is applied while measuring a thermovoltage component and a DC rectification voltage component created by the applied alternating voltage. The target alternating voltage is reached when the thermovoltage is nullified or doubled by the DC rectification voltage depending on the sign of the reference thermovoltage. Thermoelectric current and current measurements may be utilized in place of the thermovoltage and voltage measurements. The system may be automated with a feedback loop.

High temperature charge amplifier for geothermal applications

DOEpatents

Lindblom, Scott C.; Maldonado, Frank J.; Henfling, Joseph A.

2015-12-08

An amplifier circuit in a multi-chip module includes a charge to voltage converter circuit, a voltage amplifier a low pass filter and a voltage to current converter. The charge to voltage converter receives a signal representing an electrical charge and generates a voltage signal proportional to the input signal. The voltage amplifier receives the voltage signal from the charge to voltage converter, then amplifies the voltage signal by the gain factor to output an amplified voltage signal. The lowpass filter passes low frequency components of the amplified voltage signal and attenuates frequency components greater than a cutoff frequency. The voltage to current converter receives the output signal of the lowpass filter and converts the output signal to a current output signal; wherein an amplifier circuit output is selectable between the output signal of the lowpass filter and the current output signal.

Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure

NASA Astrophysics Data System (ADS)

Chou, Kuan-Yu; Hsu, Nai-Wen; Su, Yi-Hsin; Chou, Chung-Tao; Chiu, Po-Yuan; Chuang, Yen; Li, Jiun-Yun

2018-02-01

We investigate DC characteristics of a two-dimensional electron gas (2DEG) in an undoped Si/SiGe heterostructure and its temperature dependence. An insulated-gate field-effect transistor was fabricated, and transfer characteristics were measured at 4 K-300 K. At low temperatures (T < 45 K), source electrons are injected into the buried 2DEG channel first and drain current increases with the gate voltage. By increasing the gate voltage further, the current saturates followed by a negative transconductance observed, which can be attributed to electron tunneling from the buried channel to the surface channel. Finally, the drain current is saturated again at large gate biases due to parallel conduction of buried and surface channels. By increasing the temperature, an abrupt increase in threshold voltage is observed at T ˜ 45 K and it is speculated that negatively charged impurities at the Al2O3/Si interface are responsible for the threshold voltage shift. At T > 45 K, the current saturation and negative transconductance disappear and the device acts as a normal transistor.

Performance and Reliability of Solid Tantalum Capacitors at Cryogenic Conditions

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2006-01-01

Performance of different types of solid tantalum capacitors was evaluated at room and low temperatures, down to 15 K. The effect of temperature on frequency dependencies of capacitance, effective series resistances (ESR), leakage currents, and breakdown voltages has been investigated and analyzed. To assess thermo-mechanical robustness of the parts, several groups of loose capacitors and those soldered on FR4 boards were subjected to multiple (up to 500) temperature cycles between room temperature and 77 K. Experiments and mathematical modeling have shown that degradation in tantalum capacitors at low temperatures is mostly due to increasing resistance of the manganese cathode layer, resulting in substantial decrease of the roll-off frequency. Absorption currents follow a power law, I approximately t(sup -m), with the exponent m varying from 0.8 to 1.1. These currents do not change significantly at cryogenic conditions and the value of the exponent remains the same down to 15 K. Variations of leakage currents with voltage can be described by Pool-Frenkel and Schottky mechanisms of conductivity, with the Schottky mechanism prevailing at cryogenic conditions. Breakdown voltages of tantalum capacitors increase and the probability of scintillations decreases at cryogenic temperatures. However, breakdown voltages measured during surge current testing decrease at liquid nitrogen (LN) compared to room-temperature conditions. Results of temperature cycling suggest that tantalum capacitors are capable of withstanding multiple exposures to cryogenic conditions, but the probability of failures varies for different part types.

Forward voltage short-pulse technique for measuring high power laser array junction temperature

NASA Technical Reports Server (NTRS)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Temperature dependence of the enhanced inverse spin Hall voltage in Pt/Antiferromagnetic/ Y3Fe5O12

NASA Astrophysics Data System (ADS)

Brangham, J. T.; Lee, A. J.; Cheng, Y.; Yu, S. S.; Dunsiger, S. R.; Page, M. R.; Hammel, P. C.; Yang, F. Y.

The generation, propagation, and detection of spin currents are of intense interest in the field of spintronics. Spin current generation by FMR spin pumping using Y3Fe5O12 (YIG) and spin current detection by the inverse spin Hall effect (ISHE) in metals such as Pt have been well studied. This is due to YIG's exceptionally low damping and insulating behavior and the large spin Hall angle of Pt. Previously, our group showed that the ISHE voltages are significantly enhanced by adding a thin intermediate layer of an antiferromagnet (AFM) between Pt and YIG at room temperature. Recent theoretical work predicts a mechanism for this enhancement as well as the temperature dependence of the ISHE voltages of metal/AFM/YIG trilayers. The predictions show a maximum in the ISHE voltages for these systems near the magnetic phase transition temperature of the AFM. Here we present experimental results showing the temperature dependence for Pt/AFM/YIG structures with various AFMs. DOE Grant No. DE-SC0001304.

Positive temperature coefficient thermistors based on carbon nanotube/polymer composites

PubMed Central

Zeng, You; Lu, Guixia; Wang, Han; Du, Jinhong; Ying, Zhe; Liu, Chang

2014-01-01

In order to explore availability of carbon nanotube (CNT)-based positive temperature coefficient (PTC) thermistors in practical application, we prepared carbon nanotube (CNT) filled high density polyethylene (HDPE) composites by using conventional melt-mixing methods, and investigated their PTC effects in details. The CNT-based thermistors exhibit much larger hold current and higher hold voltage, increasing by 129% in comparison with the commercial carbon black (CB) filled HDPE thermistors. Such high current-bearing and voltage-bearing capacity for the CNT/HDPE thermistors is mainly attributed to high thermal conductivity and heat dissipation of entangled CNT networks. Moreover, the CNT/HDPE thermistors exhibit rapid electrical response to applied voltages, comparable to commercial CB-based thermistors. In light of their high current-bearing capacity and quick response, the CNT-based thermistors have great potential to be used as high-performance thermistors in practical application, especially in some critical circumstances of high temperature, large applied currents, and high applied voltages. PMID:25327951

High-temperature, gas-filled ceramic rectifiers, thyratrons, and voltage-reference tubes

NASA Technical Reports Server (NTRS)

Baum, E. A.

1969-01-01

Thyratron, capable of being operated as a rectifier and a voltage-reference tube, was constructed and tested for 1000 hours at temperatures to 800 degrees C. With current levels at 15 amps and peak voltages of 2000 volts and frequencies at 6000 cps, tube efficiency was greater than 97 percent.

A Fresh Look at the Semiconductor Bandgap Using Constant Current Data

ERIC Educational Resources Information Center

Ocaya, R. O.; Luhanga, P. V. C.

2011-01-01

It is shown that the well-known linear variation of p-n diode terminal voltage with temperature at different fixed forward currents allows easy and accurate determination of the semiconductor ideality factor and bandgap from only two data points. This is possible if the temperature difference required to maintain the same diode voltage drop can be…

Measurements and Modeling of III-V Solar Cells at High Temperatures up to 400 $${}^{\\circ}$$ C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Geisz, John F.

2016-09-01

In this paper, we study the performance of 2.0 eV Al0.12Ga0.39In0.49P and 1.4 eV GaAs solar cells over a temperature range of 25-400 degrees C. The temperature-dependent J01 and J02 dark currents are extracted by fitting current-voltage measurements to a two-diode model. We find that the intrinsic carrier concentration ni dominates the temperature dependence of the dark currents, open-circuit voltage, and cell efficiency. To study the impact of temperature on the photocurrent and bandgap of the solar cells, we measure the quantum efficiency and illuminated current-voltage characteristics of the devices up to 400 degrees C. As the temperature is increased,more » we observe no degradation to the internal quantum efficiency and a decrease in the bandgap. These two factors drive an increase in the short-circuit current density at high temperatures. Finally, we measure the devices at concentrations ranging from ~30 to 1500 suns and observe n = 1 recombination characteristics across the entire temperature range. These findings should be a valuable guide to the design of any system that requires high-temperature solar cell operation.« less

Effect of injection current and temperature on signal strength in a laser diode optical feedback interferometer.

PubMed

Al Roumy, Jalal; Perchoux, Julien; Lim, Yah Leng; Taimre, Thomas; Rakić, Aleksandar D; Bosch, Thierry

2015-01-10

We present a simple analytical model that describes the injection current and temperature dependence of optical feedback interferometry signal strength for a single-mode laser diode. The model is derived from the Lang and Kobayashi rate equations, and is developed both for signals acquired from the monitoring photodiode (proportional to the variations in optical power) and for those obtained by amplification of the corresponding variations in laser voltage. The model shows that both the photodiode and the voltage signal strengths are dependent on the laser slope efficiency, which itself is a function of the injection current and the temperature. Moreover, the model predicts that the photodiode and voltage signal strengths depend differently on injection current and temperature. This important model prediction was proven experimentally for a near-infrared distributed feedback laser by measuring both types of signals over a wide range of injection currents and temperatures. Therefore, this simple model provides important insight into the radically different biasing strategies required to achieve optimal sensor sensitivity for both interferometric signal acquisition schemes.

Modelling of electric characteristics of 150-watt peak solar panel using Boltzmann sigmoid function under various temperature and irradiance

NASA Astrophysics Data System (ADS)

Sapteka, A. A. N. G.; Narottama, A. A. N. M.; Winarta, A.; Amerta Yasa, K.; Priambodo, P. S.; Putra, N.

2018-01-01

Solar energy utilized with solar panel is a renewable energy that needs to be studied further. The site nearest to the equator, it is not surprising, receives the highest solar energy. In this paper, a modelling of electrical characteristics of 150-Watt peak solar panels using Boltzmann sigmoid function under various temperature and irradiance is reported. Current, voltage, temperature and irradiance data in Denpasar, a city located at just south of equator, was collected. Solar power meter is used to measure irradiance level, meanwhile digital thermometer is used to measure temperature of front and back panels. Short circuit current and open circuit voltage data was also collected at different temperature and irradiance level. Statistically, the electrical characteristics of 150-Watt peak solar panel can be modelled using Boltzmann sigmoid function with good fit. Therefore, it can be concluded that Boltzmann sigmoid function might be used to determine current and voltage characteristics of 150-Watt peak solar panel under various temperature and irradiance.

Temperature-dependent performance of all-NbN DC-SQUID magnetometers

NASA Astrophysics Data System (ADS)

Liu, Quansheng; Wang, Huiwu; Zhang, Qiyu; Wang, Hai; Peng, Wei; Wang, Zhen

2017-05-01

Integrated NbN direct current superconducting quantum interference device (DC-SQUID) magnetometers were developed based on high-quality epitaxial NbN/AlN/NbN Josephson junctions for SQUID applications operating at high temperatures. We report the current-voltage and voltage-flux characteristics and the noise performance of the NbN DC-SQUIDs for temperatures ranging from 4.2 to 9 K. The critical current and voltage swing of the DC-SQUIDs decreased by 15% and 25%, respectively, as the temperature was increased from 4.2 to 9 K. The white flux noise of the DC-SQUID magnetometer at 1 kHz increased from 3.9 μΦ0/Hz1/2 at 4.2 K to 4.8 μΦ0/Hz1/2 at 9 K with 23% increase, corresponding to the magnetic field noise of 6.6 and 8.1 fT/Hz1/2, respectively. The results show that NbN DC-SQUIDs improve the tolerance of the operating temperatures and temperature fluctuations in SQUID applications.

Universal Majorana thermoelectric noise

NASA Astrophysics Data System (ADS)

Smirnov, Sergey

2018-04-01

Thermoelectric phenomena resulting from an interplay between particle flows induced by electric fields and temperature inhomogeneities are extremely insightful as a tool providing substantial knowledge about the microscopic structure of a given system. By tuning, e.g., parameters of a nanoscopic system coupled via tunneling mechanisms to two contacts, one may achieve various situations where the electric current induced by an external bias voltage competes with the electric current excited by the temperature difference of the two contacts. Even more exciting physics emerges when the system's electronic degrees freedom split to form Majorana fermions which make the thermoelectric dynamics universal. Here, we propose revealing these unique universal signatures of Majorana fermions in strongly nonequilibrium quantum dots via noise of the thermoelectric transport beyond linear response. It is demonstrated that whereas mean thermoelectric quantities are only universal at large-bias voltages, the noise of the electric current excited by an external bias voltage and the temperature difference of the contacts is universal at any bias voltage. We provide truly universal, i.e., independent of the system's parameters, thermoelectric ratios between nonlinear response coefficients of the noise and mean current at large-bias voltages where experiments may easily be performed to uniquely detect these truly universal Majorana thermoelectric signatures.

Origin of large dark current increase in InGaAs/InP avalanche photodiode

NASA Astrophysics Data System (ADS)

Wen, J.; Wang, W. J.; Chen, X. R.; Li, N.; Chen, X. S.; Lu, W.

2018-04-01

The large dark current increase near the breakdown voltage of an InGaAs/InP avalanche photodiode is observed and analyzed from the aspect of bulk defects in the device materials. The trap level information is extracted from the temperature-dependent electrical characteristics of the device and the low temperature photoluminescence spectrum of the materials. Simulation results with the extracted trap level taken into consideration show that the trap is in the InP multiplication layer and the trap assisted tunneling current induced by the trap is the main cause of the large dark current increase with the bias from the punch-through voltage to 95% breakdown voltage.

An inherent curvature-compensated voltage reference using non-linearity of gate coupling coefficient

NASA Astrophysics Data System (ADS)

Hande, Vinayak; Shojaei Baghini, Maryam

2015-08-01

A novel current-mode voltage reference circuit which is capable of generating sub-1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature compensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to reduce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24 μA. A temperature coefficient of 9 ppm/°C is achieved over -25 to 125 °C temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × 110 μm2

Analysis of electrical properties of heterojunction based on ZnIn2Se4

NASA Astrophysics Data System (ADS)

Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.; Al-Harbi, F. F.

2017-04-01

Heterojunction of n-ZnIn2Se4/p-Si was fabricated using thermal evaporation of ZnIn2Se4 thin films of thickness 473 nm onto p-Si substrate at room temperature. The characteristics of current-voltage (I-V) for n-ZnIn2Se4/p-Si heterojunction were investigated at different temperatures ranged from 308 K to 363 K. The junction parameters namely are; rectification ratio (RR), series resistance (Rs), shunt resistance (Rsh) and diode ideality factor (n) were calculated from the analysis of I-V curves. The forward current showed two conduction mechanisms operating, which were the thermionic emission and the single trap space charge limited current in low (0 ≤ V ≤ 0.5 V) and high (V ≥ 0.7 V) ranges of voltage, respectively. The reverse current was due to the generation through Si rather than the ZnIn2Se4 film. The built-in voltage and the width of the depletion region were determined from the capacitance-voltage (C-V) measurements. The photovoltaic characteristics of the junction were also studied through the (I-V) measurements under illumination of 40 mW/cm2. The cell parameters; the short-circuit current, the open-circuit voltage and the fill factor were estimated at room temperature.

Charge transport study in bis{2-(2-hydroxyphenyl) benzoxazolate} zinc [Zn(hpb)2

NASA Astrophysics Data System (ADS)

Rai, Virendra Kumar; Srivastava, Ritu; Chauhan, Gayatri; Kumar, Arunandan; Kamalasanan, M. N.

2008-10-01

The nature of the electrical transport mechanism for carrier transport in pure bis {2-(2-hydroxyphenyl) benzoxazolate} zinc [Zn(hpb)2] has been studied by current voltage measurements of samples at different thicknesses and at different temperatures. Hole-only devices show ohmic conduction at low voltages and space charge conduction at high voltages. The space charge conduction is clearly identifiable with a square law dependence of current on voltage as well as the scaling of current inversely with the cube of thickness. With a further increase in voltage, the current increases with a Vm dependence with m varying with temperature typical of trap limited conduction with an exponential distribution of trap states. From the square law region the effective charge carrier mobility of holes has been evaluated as 2.5 × 10-11 m2 V-1 s-1. Electron-only devices however show electrode limited conduction, which was found to obey the Scott Malliaras model of charge injection.

Multilayer Piezoelectric Stack Actuator Characterization

NASA Technical Reports Server (NTRS)

Sherrit, Stewart; Jones, Christopher M.; Aldrich, Jack B.; Blodget, Chad; Bao, Xioaqi; Badescu, Mircea; Bar-Cohen, Yoseph

2008-01-01

Future NASA missions are increasingly seeking to use actuators for precision positioning to accuracies of the order of fractions of a nanometer. For this purpose, multilayer piezoelectric stacks are being considered as actuators for driving these precision mechanisms. In this study, sets of commercial PZT stacks were tested in various AC and DC conditions at both nominal and extreme temperatures and voltages. AC signal testing included impedance, capacitance and dielectric loss factor of each actuator as a function of the small-signal driving sinusoidal frequency, and the ambient temperature. DC signal testing includes leakage current and displacement as a function of the applied DC voltage. The applied DC voltage was increased to over eight times the manufacturers' specifications to investigate the correlation between leakage current and breakdown voltage. Resonance characterization as a function of temperature was done over a temperature range of -180C to +200C which generally exceeded the manufacturers' specifications. In order to study the lifetime performance of these stacks, five actuators from one manufacturer were driven by a 60volt, 2 kHz sine-wave for ten billion cycles. The tests were performed using a Lab-View controlled automated data acquisition system that monitored the waveform of the stack electrical current and voltage. The measurements included the displacement, impedance, capacitance and leakage current and the analysis of the experimental results will be presented.

Current-voltage scaling of a Josephson-junction array at irrational frustration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Granato, E.

1996-10-01

Numerical simulations of the current-voltage characteristics of an ordered two-dimensional Josephson-junction array at an irrational flux quantum per plaquette are presented. The results are consistent with a scaling analysis that assumes a zero-temperature vortex-glass transition. The thermal-correlation length exponent characterizing this transition is found to be significantly different from the corresponding value for vortex-glass models in disordered two-dimensional superconductors. This leads to a current scale where nonlinearities appear in the current-voltage characteristics decreasing with temperature {ital T} roughly as {ital T}{sup 2} in contrast with the {ital T}{sup 3} behavior expected for disordered models. {copyright} {ital 1996 The American Physicalmore » Society.}« less

Temperature and voltage stress dependent dielectric relaxation process of the doped Ba0.67Sr0.33TiO3 ceramics

NASA Astrophysics Data System (ADS)

Yan, Shiguang; Mao, Chaoliang; Wang, Genshui; Yao, Chunhua; Cao, Fei; Dong, Xianlin

2013-09-01

The current decay characteristic in the time domain is studied in Y3+ and Mn2+ modified Ba0.67Sr0.33TiO3 ceramics under different temperatures (25 °C-213 °C) and voltage stresses (0 V-800 V). The decay of the current is correlated with the overlapping of the relaxation process and leakage current. With respect to the inherent remarkable dielectric nonlinearity, a simple method through curve fitting is derived to differentiate these two currents. Two mechanisms of the relaxation process are proposed: a distribution of the potential barriers mode around room temperature and an electron injection mode at the elevated temperature of 110 °C.

A temperature monitor circuit with small voltage sensitivity using a topology-reconfigurable ring oscillator

NASA Astrophysics Data System (ADS)

Kishimoto, Tadashi; Ishihara, Tohru; Onodera, Hidetoshi

2018-04-01

In this paper, we propose a temperature monitor circuit that exhibits a small supply voltage sensitivity adopting a circuit topology of a reconfigurable ring oscillator. The circuit topology of the monitor is crafted such that the oscillation frequency is determined by the amount of subthreshold leakage current, which has an exponential dependence on temperature. Another important characteristic of the monitor is its small supply voltage sensitivity. The measured oscillation frequency of a test chip fabricated in a 65 nm CMOS process varies only 2.6% under a wide range of supply voltages from 0.4 to 1.0 V at room temperature. The temperature estimation error ranges from -0.3 to 0.4 °C over a temperature range of 10 to 100 °C.

A Novel Technique for Maximum Power Point Tracking of a Photovoltaic Based on Sensing of Array Current Using Adaptive Neuro-Fuzzy Inference System (ANFIS)

NASA Astrophysics Data System (ADS)

El-Zoghby, Helmy M.; Bendary, Ahmed F.

2016-10-01

Maximum Power Point Tracking (MPPT) is now widely used method in increasing the photovoltaic (PV) efficiency. The conventional MPPT methods have many problems concerning the accuracy, flexibility and efficiency. The MPP depends on the PV temperature and solar irradiation that randomly varied. In this paper an artificial intelligence based controller is presented through implementing of an Adaptive Neuro-Fuzzy Inference System (ANFIS) to obtain maximum power from PV. The ANFIS inputs are the temperature and cell current, and the output is optimal voltage at maximum power. During operation the trained ANFIS senses the PV current using suitable sensor and also senses the temperature to determine the optimal operating voltage that corresponds to the current at MPP. This voltage is used to control the boost converter duty cycle. The MATLAB simulation results shows the effectiveness of the ANFIS with sensing the PV current in obtaining the MPPT from the PV.

Biophysical characterization of the fluorescent protein voltage probe VSFP2.3 based on the voltage-sensing domain of Ci-VSP.

PubMed

Lundby, Alicia; Akemann, Walther; Knöpfel, Thomas

2010-11-01

A voltage sensitive phosphatase was discovered in the ascidian Ciona intestinalis. The phosphatase, Ci-VSP, contains a voltage-sensing domain homologous to those known from voltage-gated ion channels, but unlike ion channels, the voltage-sensing domain of Ci-VSP can reside in the cell membrane as a monomer. We fused the voltage-sensing domain of Ci-VSP to a pair of fluorescent reporter proteins to generate a genetically encodable voltage-sensing fluorescent probe, VSFP2.3. VSFP2.3 is a fluorescent voltage probe that reports changes in membrane potential as a FRET (fluorescence resonance energy transfer) signal. Here we report sensing current measurements from VSFP2.3, and show that VSFP2.3 carries 1.2 e sensing charges, which are displaced within 1.5 ms. The sensing currents become faster at higher temperatures, and the voltage dependence of the decay time constants is temperature dependent. Neutralization of an arginine in S4, previously suggested to be a sensing charge, and measuring associated sensing currents indicate that this charge is likely to reside at the membrane-aqueous interface rather than within the membrane electric field. The data presented give us insights into the voltage-sensing mechanism of Ci-VSP, which will allow us to further improve the sensitivity and kinetics of the family of VSFP proteins.

Temperature Dependence Of Current-Voltage Characteristics Of Au/p-GaAsN Schottky Barrier Diodes, With Small N Content

NASA Astrophysics Data System (ADS)

Rangel-Kuoppa, Victor-Tapio; Reentilä, Outi; Sopanen, Markku; Lipsanen, Harri

2011-12-01

The temperature dependent current-voltage (IVT) measurements on Au Schottky barrier diodes made on intrinsically p-type GaAs1-xNx were carried out. Three samples with small N content (x = 0.5%, 0.7% and 1%) were studied. The temperature range was 10-320 K. All contacts were found to be of Schottky type. The ideality factor and the apparent barrier height calculated by using thermionic emission (TE) theory show a strong temperature dependence. The current voltage (IV) curves are fitted based on the TE theory, yielding a zero-bias carrier height (ΦB0) and a ideality factor (n) that decrease and increase with decreasing temperature, respectively. The linear fitting of ΦB0 vs n and its subsequent evaluation for n = 1 give a zero-bias ΦB0 in the order of 0.35-0.4 eV. From the reverse-bias IV study, it is found that the experimental carrier density (NA) values increase with increasing temperature and are in agreement with the intrinsic carrier concentration for GaAs.

Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Hung-Ta; Kang, B. S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

2005-10-01

Pt-gated AlGaN /GaN high electron mobility transistors can be used as room-temperature hydrogen gas sensors at hydrogen concentrations as low as 100ppm. A comparison of the changes in drain and gate current-voltage (I-V) characteristics with the introduction of 500ppm H2 into the measurement ambient shows that monitoring the change in drain-source current provides a wider gate voltage operation range for maximum detection sensitivity and higher total current change than measuring the change in gate current. However, over a narrow gate voltage range, the relative sensitivity of detection by monitoring the gate current changes is up to an order of magnitude larger than that of drain-source current changes. In both cases, the changes are fully reversible in <2-3min at 25°C upon removal of the hydrogen from the ambient.

Aging and failure mode of electrochemical double layer capacitors during accelerated constant load tests

NASA Astrophysics Data System (ADS)

Kötz, R.; Ruch, P. W.; Cericola, D.

Electrochemical double layer capacitors of the BCAP0350 type (Maxwell Technologies) were tested under constant load conditions at different voltages and temperatures. The aging of the capacitors was monitored during the test in terms of capacitance, internal resistance and leakage current. Aging was significantly accelerated by elevated temperature or increased voltage. Only for extreme conditions at voltages of 3.5 V or temperatures above 70 °C the capacitors failed due to internal pressure build-up. No other failure events such as open circuit or short circuit were detected. Impedance measurements after the tests showed increased high frequency resistance, an increased distributed resistance and most likely an increase in contact resistance between electrode and current collector together with a loss of capacitance. Capacitors aged at elevated voltages (3.3 V) exhibited a tilting of the low frequency component, which implies an increase in the heterogeneity of the electrode surface. This feature was not observed upon aging at elevated temperatures (70 °C).

Temperature characteristics of silicon space solar cells and underlying parameters

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Kachare, Ram; Garlick, G. F. J.

1987-01-01

Silicon space cells, 2 cm x 2 cm, with 10 ohm-cm p-base resistivity, 8-mil base thickness, and no back-surface fields have been investigated over the temperature range from 301 to 223 K by measurements of dark forward and reverse current-voltage characteristics and current-voltage relations under illumination. From dark forward bias data, the first and second diode saturation currents, I01 and I02, are determined and hence the base diffusion length and lifetime of minority carriers as functions of temperature. Lifetime increases exponentially with temperature and is explained by a Shockley-Read-Hall model with deep recombination levels 0.245 eV above the valence band. The I02 variation with temperature follows the Sah-Noyce-Shockley-Choo model except at low temperature where extra transitions raise the value above the predicted level. Reverse bias current at low voltage is a thermally assisted tunneling process via deep levels which are observed in base recombination at higher temperatures. The tunneling effects tend to become independent of temperature in the low-temperature region. These results demonstrate the ability to deduce basic parameters such as lifetime from simple measurements and show that back-surface fields offer no advantage at temperatures below 230 K. The analysis also explains the fall in lifetimes observed as the base conductivity increases, attributing it to native defects (perhaps carbon-oxygen-vacancy complexes) rather than the concentration of base dopant.

Recombination in polymer-fullerene bulk heterojunction solar cells

NASA Astrophysics Data System (ADS)

Cowan, Sarah R.; Roy, Anshuman; Heeger, Alan J.

2010-12-01

Recombination of photogenerated charge carriers in polymer bulk heterojunction (BHJ) solar cells reduces the short circuit current (Jsc) and the fill factor (FF). Identifying the mechanism of recombination is, therefore, fundamentally important for increasing the power conversion efficiency. Light intensity and temperature-dependent current-voltage measurements on polymer BHJ cells made from a variety of different semiconducting polymers and fullerenes show that the recombination kinetics are voltage dependent and evolve from first-order recombination at short circuit to bimolecular recombination at open circuit as a result of increasing the voltage-dependent charge carrier density in the cell. The “missing 0.3 V” inferred from comparison of the band gaps of the bulk heterojunction materials and the measured open-circuit voltage at room-temperature results from the temperature dependence of the quasi-Fermi levels in the polymer and fullerene domains—a conclusion based on the fundamental statistics of fermions.

Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levinshtein, M. E., E-mail: melev@nimis.ioffe.ru; Ivanov, P. A.; Zhang, Q. J.

The forward-pulse isothermal current–voltage characteristics of 4H-SiC junction barrier Schottky rectifiers (JBSs) with a nominal blocking voltage of 1700 V are measured in the temperature range from–80 to +90°C (193–363 K) up to current densities j of ~5600 A/cm{sup 2} at–80°C and 3000 A/cm{sup 2} at +90°C. In these measurements, the overheating of the structures relative to the ambient temperature, ΔT, did not exceed several degrees. At higher current densities, the effective injection of minority carriers (holes) into the base of the structures is observed, which is accompanied by the appearance of an S-type differential resistance. The pulsed isothermal current–voltagemore » characteristics are also measured at a temperature of 77 K.« less

Electrical transport properties of thermally evaporated phthalocyanine (H 2Pc) thin films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Farid, A. M.; Attia, A. A.; Ali, H. A. M.

2006-08-01

Thin films of H 2Pc of various thicknesses have been deposited onto glass substrates using thermal evaporation technique at room temperature. The dark electrical resistivity measurements were carried out at different temperatures in the range 298-473 K. An estimation of mean free path ( lo) of charge carriers in H 2Pc thin films was attempted. Measurements of thermoelectric power confirm that H 2Pc thin films behave as a p-type semiconductor. The current density-voltage characteristics of Au/H 2Pc/Au at room temperature showed ohmic conduction mechanism at low voltages. At higher voltages the space-charge-limited conduction (SCLC) accompanied by an exponential trap distribution was dominant. The temperature dependence of current density allows the determination of some essential parameters such as the hole mobility ( μh), the total trap concentration ( Nt), the characteristic temperature ( Tt) and the trap density P( E).

Temperature, illumination and fluence dependence of current and voltage in electron irradiated solar cells

NASA Technical Reports Server (NTRS)

Obenschain, A. F.; Faith, T. J.

1973-01-01

Emperical equations have been derived from measurements of solar cell photovoltaic characteristics relating light generated current, IL, and open circuit voltage, VO, to cell temperature, T, intensity of illumination, W, and 1 Mev electron fluence, phi both 2 ohm-cm and 10 ohm-cm cells were tested. The temperature dependency of IL is similar for both resistivities at 140mw/sq cm; at high temperature the coefficient varies with fluence as phi 0.18, while at low temperatures the coefficient is relatively independent of fluence. Fluence dependent degration causes a decrease in IL at a rate proportional to phi 0.153 for both resistivities. At all intensities other than 560 mw/sq cm, a linear dependence of IL on illumination was found. The temperature coefficient of voltage was, to a good approximation, independent of both temperature and illumination for both resistivities. Illumination dependence of VOC was logarithmic, while the decrease with fluence of VOC varied as phi 0.25 for both resistivities.

Heating of solid earthen material, measuring moisture and resistivity

DOEpatents

Heath, W.O.; Richardson, R.L.; Goheen, S.C.

1994-07-19

The present invention includes a method of treating solid earthen material having volatile, semi-volatile, and non-volatile contaminants. Six electrodes are inserted into a region of earthen material to be treated in a substantially equilateral hexagonal arrangement. Six phases of voltages are applied to corresponding electrodes. The voltages are adjusted within a first range of voltages to create multiple current paths between pairs of the electrodes. The current paths are evenly distributed throughout the region defined by the electrodes and therefore uniformly heat the region. The region of earthen material is heated to a temperature sufficient to substantially remove volatile and semi-volatile contaminants by promoting microbial action. This temperature is less than a melting temperature of the earthen material. 13 figs.

Heating of solid earthen material, measuring moisture and resistivity

DOEpatents

Heath, William O.; Richardson, Richard L.; Goheen, Steven C.

1994-01-01

The present invention includes a method of treating solid earthen material having volatile, semi-volatile, and non-volatile contaminants. Six electrodes are inserted into a region of earthen material to be treated in a substantially equilateral hexagonal arrangement. Six phases of voltages are applied to corresponding electrodes. The voltages are adjusted within a first range of voltages to create multiple current paths between pairs of the electrodes. The current paths are evenly distributed throughout the region defined by the electrodes and therefore uniformly heat the region. The region of earthen material is heated to a temperature sufficient to substantially remove volatile and semi-volatile contaminants by promoting microbial action. This temperature is less than a melting temperature of the earthen material.

Systematic error of diode thermometer.

PubMed

Iskrenovic, Predrag S

2009-08-01

Semiconductor diodes are often used for measuring temperatures. The forward voltage across a diode decreases, approximately linearly, with the increase in temperature. The applied method is mainly the simplest one. A constant direct current flows through the diode, and voltage is measured at diode terminals. The direct current that flows through the diode, putting it into operating mode, heats up the diode. The increase in temperature of the diode-sensor, i.e., the systematic error due to self-heating, depends on the intensity of current predominantly and also on other factors. The results of systematic error measurements due to heating up by the forward-bias current have been presented in this paper. The measurements were made at several diodes over a wide range of bias current intensity.

The Sheath-less Planar Langmuir Probe

NASA Astrophysics Data System (ADS)

Cooke, D. L.

2017-12-01

The Langmuir probe is one of the oldest plasma diagnostics, provided the plasma density and species temperature from analysis of a current-voltage curve as the voltage is swept over a practically chosen range. The analysis depends on a knowledge or theory of the many factors that influence the current-voltage curve including, probe shape, size, nearby perturbations, and the voltage reference. For applications in Low Earth Orbit, the Planar Langmuir Probe, PLP, is an attractive geometry because the ram ion current is very constant over many Volts of a sweep, allowing the ion density and electron temperature to be determined independently with the same instrument, at different points on the sweep. However, when the physical voltage reference is itself small and electrically floating as with a small spacecraft, the spacecraft and probe system become a double probe where the current collection theory depends on the interaction of the spacecraft with the plasma which is generally not as simple as the probe itself. The Sheath-less PLP, SPLP, interlaces on a single ram facing surface, two variably biased probe elements, broken into many small and intertwined segments on a scale smaller than the plasma Debye length. The SPLP is electrically isolated from the rest of the spacecraft. For relative bias potentials of a few volts, the ion current to all segments of each element will be constant, while the electron currents will vary as a function of the element potential and the electron temperature. Because the segments are small, intertwined, and floating, the assembly will always present the same floating potential to the plasma, with minimal growth as a function of voltage, thus sheath-less and still planar. This concept has been modelled with Nascap, and tested with a physical model inserted into a Low Earth Orbit-like chamber plasma. Results will be presented.

Temperature dependence of frequency response characteristics in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Lu, Xubing; Minari, Takeo; Liu, Chuan; Kumatani, Akichika; Liu, J.-M.; Tsukagoshi, Kazuhito

2012-04-01

The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator-semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

Organic Bistable Memory Switching Phenomena in Squarylium-Dye Langmuir-Blodgett Films

NASA Astrophysics Data System (ADS)

Kushida, Masahito; Inomata, Hisao; Miyata, Hiroshi; Harada, Kieko; Saito, Kyoichi; Sugita, Kazuyuki

2003-06-01

We have investigated the relationship between the switching phenomena and H-like aggregates in squarylium-dye Langmuir-Blodgett (SQ LB) films. The current-voltage characteristics of SQ LB films sandwiched between the top gold electrode and the bottom aluminum electrode indicated conductance switching phenomena below the temperature of 100°C but not at 140°C. Current densities suddenly increased at switching voltages between 2 and 4 V. The switching voltage increased as the temperature increased between room temperature and 100°C. Current densities were 50-100 μA/cm2 in a low-impedance state (ON state). A high-impedance state (OFF state) can be recovered by applying a reverse bias, and therefore, these bistable devices are ideal for memory applications. The dependence of conductance switching phenomena and ultraviolet-visible absorption spectra on annealing temperatures was studied. The results revealed that conductance switching phenomena were caused by the presence of H-like aggregates in the SQ LB films.

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

NASA Astrophysics Data System (ADS)

Sometani, Mitsuru; Okamoto, Dai; Harada, Shinsuke; Ishimori, Hitoshi; Takasu, Shinji; Hatakeyama, Tetsuo; Takei, Manabu; Yonezawa, Yoshiyuki; Fukuda, Kenji; Okumura, Hajime

2015-01-01

The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO2/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO2/4H-SiC interface. On the basis of Arrhenius plots of the PF current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO2 films on the Si-face of 4H-SiC.

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sometani, Mitsuru; Takei, Manabu; Fuji Electric Co. Ltd., 1 Fuji-machi, Hino, 191-8502 Tokyo

The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO{sub 2}/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO{sub 2}/4H-SiC interface. On the basis of Arrhenius plots of the PFmore » current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO{sub 2} films on the Si-face of 4H-SiC.« less

Pixelated Geiger-Mode Avalanche Photo-Diode Characterization Through Dark Current Measurement

NASA Astrophysics Data System (ADS)

Amaudruz, Pierre-Andre; Bishop, Daryl; Gilhully, Colleen; Goertzen, Andrew; James, Lloyd; Kozlowski, Piotr; Retiere, Fabrice; Shams, Ehsan; Sossi, Vesna; Stortz, Greg; Thiessen, Jonathan D.; Thompson, Christopher J.

2014-06-01

PIXELATED geiger-mode avalanche photodiodes (PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic physics experiments, which requires extensive test and operation procedures in order to achieve uniform responses from all the devices. In this paper, we show for two PPD brands, Hamamatsu MPPC and SensL SPM, that at room temperature, the dark noise rate, breakdown voltage and rate of correlated avalanches can be inferred from the sole measure of dark current as a function of operating voltage, hence greatly simplifying the characterization procedure. We introduce a custom electronics system that allows measurement for many devices concurrently, hence allowing rapid testing and monitoring of many devices at low cost. Finally, we show that the dark current of Hamamastu Multi-Pixel Photon Counter (MPPC) is rather independent of temperature at constant operating voltage, hence the current measure cannot be used to probe temperature variations. On the other hand, the MPPC current can be used to monitor light source conditions in DC mode without requiring strong temperature stability, as long as the integrated source brightness is comparable to the dark noise rate.

New PMOS LTPS TFT pixel for AMOLED to suppress the hysteresis effect on OLED current by employing a reset voltage driving

NASA Astrophysics Data System (ADS)

Lee, Jae-Hoon; Park, Sang-Geun; Han, Sang-Myeon; Han, Min-Koo; Park, Kee-Chan

2008-03-01

New PMOS LTPS (low temperature polycrystalline silicon)-thin film transistor (TFT) pixel circuit, which can suppress an OLED current error caused by the hysteresis of LTPS-TFT for active matrix organic light emitting diode (AMOLED) display, is proposed and fabricated. The proposed pixel circuit employs a reset voltage driving so that the sweep direction of gate voltage in the current driving TFT is not altered by the gate voltage in the previous frame. Our experimental results show that OLED current error of the proposed pixel is successfully suppressed because a reset voltage can enable the starting gate voltage for a desired one not to be varied, while that of the conventional 2-TFT pixel exceeds over 15% due to the hysteresis of LTPS-TFT.

Thermal characterization of GaN-based laser diodes by forward-voltage method

NASA Astrophysics Data System (ADS)

Feng, M. X.; Zhang, S. M.; Jiang, D. S.; Liu, J. P.; Wang, H.; Zeng, C.; Li, Z. C.; Wang, H. B.; Wang, F.; Yang, H.

2012-05-01

An expression of the relation between junction temperature and forward voltage common for both GaN-based laser diodes (LDs) and light emitting diodes is derived. By the expression, the junction temperature of GaN-based LDs emitting at 405 nm was measured at different injection current and compared with the result of micro-Raman spectroscopy, showing that the expression is reasonable. In addition, the activation energy of Mg in AlGaN/GaN superlattice layers is obtained based on the temperature dependence of forward voltage.

Dual-frequency glow discharges in atmospheric helium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Xiaojiang; Guo, Ying; Magnetic Confinement Fusion Research Center, Ministry of Education of the People's Republic of China, Shanghai 201620

2015-10-15

In this paper, the dual-frequency (DF) glow discharges in atmospheric helium were experimented by electrical and optical measurements in terms of current voltage characteristics and optical emission intensity. It is shown that the waveforms of applied voltages or discharge currents are the results of low frequency (LF) waveforms added to high frequency (HF) waveforms. The HF mainly influences discharge currents, and the LF mainly influences applied voltages. The gas temperatures of DF discharges are mainly affected by HF power rather than LF power.

Alternating current breakdown voltage of ice electret

NASA Astrophysics Data System (ADS)

Oshika, Y.; Tsuchiya, Y.; Okumura, T.; Muramoto, Y.

2017-09-01

Ice has low environmental impact. Our research objectives are to study the availability of ice as a dielectric insulating material at cryogenic temperatures. We focus on ferroelectric ice (iceXI) at cryogenic temperatures. The properties of iceXI, including its formation, are not clear. We attempted to obtain the polarized ice that was similar to iceXI under the applied voltage and cooling to 77 K. The polarized ice have a wide range of engineering applications as electronic materials at cryogenic temperatures. This polarized ice is called ice electret. The structural difference between ice electret and normal ice is only the positions of protons. The effects of the proton arrangement on the breakdown voltage of ice electret were shown because electrical properties are influenced by the structure of ice. We observed an alternating current (ac) breakdown voltage of ice electret and normal ice at 77 K. The mean and minimum ac breakdown voltage values of ice electret were higher than those of normal ice. We considered that the electrically weak part of the normal ice was improved by applied a direct electric field.

Thermionic cogeneration burner design

NASA Astrophysics Data System (ADS)

Miskolczy, G.; Goodale, D.; Moffat, A. L.; Morgan, D. T.

Since thermionic converters receive heat at very high temperatures (approximately 1800 K) and reject heat at moderately high temperatures (approximately 800 K), they are useful for cogeneration applications involving high temperature processes. The electric power from thermionic converters is produced as a high amperage, low-voltage direct current. An ideal cogeneration application would be to utilize the reject heat at the collector temperature and the electricity without power conditioning. A cogeneration application in the edible oil industry fulfills both of these requirements since both direct heat and hydrogen gas are required in the hydrogenation of the oils. In this application, the low-voltage direct current would be used in a hydrogen electrolyzer.

A new low voltage level-shifted FVF current mirror with enhanced bandwidth and output resistance

NASA Astrophysics Data System (ADS)

Aggarwal, Bhawna; Gupta, Maneesha; Gupta, Anil Kumar; Sangal, Ankur

2016-10-01

This paper proposes a new high-performance level-shifted flipped voltage follower (LSFVF) based low-voltage current mirror (CM). The proposed CM utilises the low-supply voltage and low-input resistance characteristics of a flipped voltage follower (FVF) CM. In the proposed CM, level-shifting configuration is used to obtain a wide operating current range and resistive compensation technique is employed to increase the operating bandwidth. The peaking in frequency response is reduced by using an additional large MOSFET. Moreover, a very high output resistance (in GΩ range) along with low-current transfer error is achieved through super-cascode configuration for a wide current range (0-440 µA). Small signal analysis is carried out to show the improvements achieved at each step. The proposed CM is simulated by Mentor Graphics Eldospice in TSMC 0.18 µm CMOS, BSIM3 and Level 53 technology. In the proposed CM, a bandwidth of 6.1799 GHz, 1% settling time of 0.719 ns, input and output resistances of 21.43 Ω and 1.14 GΩ, respectively, are obtained with a single supply voltage of 1 V. The layout of the proposed CM has been designed and post-layout simulation results have been shown. The post-layout simulation results for Monte Carlo and temperature analysis have also been included to show the reliability of the CM against the variations in process parameters and temperature changes.

Straight and chopped dc performance data for a Prestolite MTC-4001 motor and a general electric EV-1 controller

NASA Technical Reports Server (NTRS)

Edie, P. C.

1981-01-01

Performance data on the Prestolite MTC-4001 series wound dc motor and General Electric EV-1 Chopper Controller is supplied for the electric vehicle manufacturer. Data are provided for both straight and chopped dc input to the motor, at 2 motor temperature levels. Testing was done at 6 voltage increments to the motor, and 2 voltage increments to the controller. Data results are presented in both tabular and graphical forms. Tabular information includes motor voltage and current input data, motor speed and torque output data, power data and temperature data. Graphical information includes torque-speed, motor power output-speed, torque-current, and efficiency-speed plots under the various operating conditions. The data resulting from this testing show the speed-torque plots to have the most variance with operating temperature. The maximum motor efficiency is between 76% and 82%, regardless of temperature or mode of operation.

Fuel cell stack monitoring and system control

DOEpatents

Keskula, Donald H.; Doan, Tien M.; Clingerman, Bruce J.

2005-01-25

A control method for monitoring a fuel cell stack in a fuel cell system in which the actual voltage and actual current from the fuel cell stack are monitored. A preestablished relationship between voltage and current over the operating range of the fuel cell is established. A variance value between the actual measured voltage and the expected voltage magnitude for a given actual measured current is calculated and compared with a predetermined allowable variance. An output is generated if the calculated variance value exceeds the predetermined variance. The predetermined voltage-current for the fuel cell is symbolized as a polarization curve at given operating conditions of the fuel cell. Other polarization curves may be generated and used for fuel cell stack monitoring based on different operating pressures, temperatures, hydrogen quantities.

Radiation Hardened Structured ASIC Platform with Compensation of Delay for Temperature and Voltage Variations for Multiple Redundant Temporal Voting Latch Technology

NASA Technical Reports Server (NTRS)

Ardalan, Sasan (Inventor)

2018-01-01

The invention relates to devices and methods of maintaining the current starved delay at a constant value across variations in voltage and temperature to increase the speed of operation of the sequential logic in the radiation hardened ASIC design.

DEVELOPMENT OF A HIGH-TEMPERATURE/HIGH-PRESSURE ELECTROSTATIC PRECIPITATOR

EPA Science Inventory

The report gives results of a laboratory test demonstrating the feasibility of electrostatic precipitation at high temperatures (to 1366 K) and pressures (to 3550 kPa): corona currents were stable at all temperatures. Detailed current/voltage characteristics under negative and po...

Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2015-01-01

Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

Superfluid phase stiffness in electron doped superconducting Gd-123

NASA Astrophysics Data System (ADS)

Das, P.; Ghosh, Ajay Kumar

2018-05-01

Current-voltage characteristics of Ce substituted Gd-123 superconductor exhibits nonlinearity below a certain temperature below the critical temperature. An exponent is extracted using the nonlinearity of current-voltage relation. Superfluid phase stiffness has been studied as a function of temperature following the Ambegaokar-Halperin-Nelson-Siggia (AHNS) theory. Phase stiffness of the superfluid below the superconducting transition is found to be sensitive to the change in the carrier concentration in superconducting system. There may be a crucial electron density which affects superfluid stiffness strongly. Electron doping is found to be effective even if the coupling of the superconducting planes is changed.

Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

2018-05-01

We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

Negative differential resistance in GaN nanocrystals above room temperature.

PubMed

Chitara, Basant; Ivan Jebakumar, D S; Rao, C N R; Krupanidhi, S B

2009-10-07

Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is approximately 7 V above room temperature.

MIS capacitor studies on silicon carbide single crystals

NASA Technical Reports Server (NTRS)

Kopanski, J. J.

1990-01-01

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

Optical voltage reference

DOEpatents

Rankin, Richard; Kotter, Dale

1994-01-01

An optical voltage reference for providing an alternative to a battery source. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function.

Measurement and analysis of solar cell current-voltage characteristics

NASA Technical Reports Server (NTRS)

Olsen, Larry C.; Addis, F. William; Doyle, Dan H.; Miller, Wesley A.

1985-01-01

Approaches to measurement and analysis of solar cell current-voltage characteristics under dark and illuminated conditions are discussed. Measurements are taken with a computer based data acquisition system for temperatures in the range of -100 to +100 C. In the fitting procedure, the various I(oi) and C(i) as well as R(S) and R(SH) are determined. Application to current-voltage analyses of high efficiency silicon cells and Boeing CdS/CuInSe2 are discussed. In silicon MINP cells, it is found that at low voltages a tunneling mechanism is dominant, while at larger voltages the I-V characteristics are usually dominated by emitter recombination. In the case of Boeing cells, a current transport model based on a tunneling mechanism and interface recombination acting in series has been developed as a result of I-V analyses.

Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement

DOEpatents

Turner, Steven Richard

2006-12-26

A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, J.; Bollinger, A. T.; He, X.

The origin of high-temperature superconductivity in copper oxides and the nature of the ‘normal’ state above the critical temperature are widely debated. In underdoped copper oxides, this normal state hosts a pseudogap and other anomalous features; and in the overdoped materials, the standard Bardeen–Cooper–Schrieffer description fails, challenging the idea that the normal state is a simple Fermi liquid. To investigate these questions, we have studied the behaviour of single-crystal La 2–xSr xCuO 4 films through which an electrical current is being passed. Here we report that a spontaneous voltage develops across the sample, transverse (orthogonal) to the electrical current. The dependence of this voltage on probe current, temperature, in-plane device orientation and doping shows that this behaviour is intrinsic, substantial, robust and present over a broad range of temperature and doping. If the current direction is rotated in-plane by an anglemore » $$\\phi$$, the transverse voltage oscillates as sin(2$$\\phi$$), breaking the four-fold rotational symmetry of the crystal. The amplitude of the oscillations is strongly peaked near the critical temperature for superconductivity and decreases with increasing doping. We find that these phenomena are manifestations of unexpected in-plane anisotropy in the electronic transport. The films are very thin and epitaxially constrained to be tetragonal (that is, with four-fold symmetry), so one expects a constant resistivity and zero transverse voltage, for every $$\\phi$$. The origin of this anisotropy is purely electronic—the so-called electronic nematicity. Unusually, the nematic director is not aligned with the crystal axes, unless a substantial orthorhombic distortion is imposed. The fact that this anisotropy occurs in a material that exhibits high-temperature superconductivity may not be a coincidence.« less

Spontaneous breaking of rotational symmetry in copper oxide superconductors

DOE PAGES

Wu, J.; Bollinger, A. T.; He, X.; ...

2017-07-26

The origin of high-temperature superconductivity in copper oxides and the nature of the ‘normal’ state above the critical temperature are widely debated. In underdoped copper oxides, this normal state hosts a pseudogap and other anomalous features; and in the overdoped materials, the standard Bardeen–Cooper–Schrieffer description fails, challenging the idea that the normal state is a simple Fermi liquid. To investigate these questions, we have studied the behaviour of single-crystal La 2–xSr xCuO 4 films through which an electrical current is being passed. Here we report that a spontaneous voltage develops across the sample, transverse (orthogonal) to the electrical current. The dependence of this voltage on probe current, temperature, in-plane device orientation and doping shows that this behaviour is intrinsic, substantial, robust and present over a broad range of temperature and doping. If the current direction is rotated in-plane by an anglemore » $$\\phi$$, the transverse voltage oscillates as sin(2$$\\phi$$), breaking the four-fold rotational symmetry of the crystal. The amplitude of the oscillations is strongly peaked near the critical temperature for superconductivity and decreases with increasing doping. We find that these phenomena are manifestations of unexpected in-plane anisotropy in the electronic transport. The films are very thin and epitaxially constrained to be tetragonal (that is, with four-fold symmetry), so one expects a constant resistivity and zero transverse voltage, for every $$\\phi$$. The origin of this anisotropy is purely electronic—the so-called electronic nematicity. Unusually, the nematic director is not aligned with the crystal axes, unless a substantial orthorhombic distortion is imposed. The fact that this anisotropy occurs in a material that exhibits high-temperature superconductivity may not be a coincidence.« less

Temperature compensated and self-calibrated current sensor

DOEpatents

Yakymyshyn, Christopher Paul; Brubaker, Michael Allen; Yakymyshyn, Pamela Jane

2007-09-25

A method is described to provide temperature compensation and reduction of drift due to aging for a current sensor based on a plurality of magnetic field sensors positioned around a current carrying conductor. The offset voltage signal generated by each magnetic field sensor is used to correct variations in the output signal due to temperature variations and aging.

Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature

NASA Astrophysics Data System (ADS)

Yoshioka, Hironori; Hirata, Kazuto

2018-04-01

The characteristics of SiC MOSFETs (drain current vs. gate voltage) were measured at 0.14-350 K and analyzed considering variable-range hopping conduction through interface states. The total interface state density was determined to be 5.4×1012 cm-2 from the additional shift in the threshold gate voltage with a temperature change. The wave-function size of interface states was determined from the temperature dependence of the measured hopping current and was comparable to the theoretical value. The channel mobility was approximately 100 cm2V-1s-1 and was almost independent of temperature.

A Flexible Three-in-One Microsensor for Real-Time Monitoring of Internal Temperature, Voltage and Current of Lithium Batteries.

PubMed

Lee, Chi-Yuan; Peng, Huan-Chih; Lee, Shuo-Jen; Hung, I-Ming; Hsieh, Chien-Te; Chiou, Chuan-Sheng; Chang, Yu-Ming; Huang, Yen-Pu

2015-05-19

Lithium batteries are widely used in notebook computers, mobile phones, 3C electronic products, and electric vehicles. However, under a high charge/discharge rate, the internal temperature of lithium battery may rise sharply, thus causing safety problems. On the other hand, when the lithium battery is overcharged, the voltage and current may be affected, resulting in battery instability. This study applies the micro-electro-mechanical systems (MEMS) technology on a flexible substrate, and develops a flexible three-in-one microsensor that can withstand the internal harsh environment of a lithium battery and instantly measure the internal temperature, voltage and current of the battery. Then, the internal information can be fed back to the outside in advance for the purpose of safety management without damaging the lithium battery structure. The proposed flexible three-in-one microsensor should prove helpful for the improvement of lithium battery design or material development in the future.

Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

NASA Astrophysics Data System (ADS)

Das, Amit Kumar; Meikap, Ajit Kumar

2017-12-01

In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

NASA Astrophysics Data System (ADS)

Das, Amit Kumar; Meikap, Ajit Kumar

2018-06-01

In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

Characterization of a High Current, Long Life Hollow Cathode

NASA Technical Reports Server (NTRS)

VanNoord, Jonathan L.; Kamhawi, Hani; McEwen, Heather K.

2006-01-01

The advent of higher power spacecraft makes it desirable to use higher power electric propulsion thrusters such as ion thrusters or Hall thrusters. Higher power thrusters require cathodes that are capable of producing higher currents. One application of these higher power spacecraft is deep-space missions that require tens of thousands of hours of operation. This paper presents the approach used to design a high current, long life hollow cathode assembly for that application, along with test results from the corresponding hollow cathode. The design approach used for the candidate hollow cathode was to reduce the temperature gradient in the insert, yielding a lower peak temperature and allowing current to be produced more uniformly along the insert. The lower temperatures result in a hollow cathode with increased life. The hollow cathode designed was successfully operated at currents from 10 to 60 A with flow rates of 5 to 19 sccm with a maximum orifice temperature measured of 1100 C. Data including discharge voltage, keeper voltage, discharge current, flow rates, and orifice plate temperatures are presented.

Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

NASA Astrophysics Data System (ADS)

Onufriyev, Valery. V.

2001-02-01

It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

Current rectification for transport of room-temperature ionic liquids through conical nanopores

DOE PAGES

Jiang, Xikai; Liu, Ying; Qiao, Rui

2016-02-09

Here, we studied the transport of room-temperature ionic liquids (RTILs) through charged conical nanopores using a Landau-Ginzburg-type continuum model that takes steric effect and strong ion-ion correlations into account. When the surface charge is uniform on the pore wall, weak current rectification is observed. When the charge density near the pore base is removed, the ionic current is greatly suppressed under negative bias voltage while nearly unchanged under positive bias voltage, thereby leading to enhanced current rectification. These predictions agree qualitatively with prior experimental observations, and we elucidated them by analyzing the different components of the ionic current and themore » structural changes of electrical double layers (EDLs) at the pore tip under different bias voltages and surface charge patterns. These analyses reveal that the different modifications of the EDL structure near the pore tip by the positive and negative bias voltages cause the current rectification and the observed dependence on the distribution of surface charge on the pore wall. The fact that the current rectification phenomena are captured qualitatively by the simple model originally developed for describing EDLs at equilibrium conditions suggests that this model may be promising for understanding the ionic transport under nonequilibrium conditions when the EDL structure is strongly perturbed by external fields.« less

Octanol reduces end-plate channel lifetime

PubMed Central

Gage, Peter W.; McBurney, Robert N.; Van Helden, Dirk

1978-01-01

1. Post-synaptic effects of n-octanol at concentrations of 0·1-1 mM were examined in toad sartorius muscles by use of extracellular and voltage-clamp techniques. 2. Octanol depressed the amplitude and duration of miniature end-plate currents and hence depressed neuromuscular transmission. 3. The decay of miniature end-plate currents remained exponential in octanol solutions even when the time constant of decay (τD) was decreased by 80-90%. 4. The lifetime of end-plate channels, obtained by analysis of acetylcholine noise, was also decreased by octanol. The average lifetime measured from noise spectra agreed reasonably well with the time constant of decay of miniature end-plate currents, both in control solution and in octanol solutions. 5. Octanol caused a reduction in the conductance of end-plate channels. Single channel conductance was on average about 25 pS in control solution and 20 pS in octanol. 6. In most cells the normal voltage sensitivity of the decay of miniature end-plate currents was retained in octanol solutions. The lifetime of end-plate channels measured from acetylcholine noise also remained voltage-sensitive in octanol solutions. In some experiments in which channel lifetime was exceptionally reduced the voltage sensitivity was less than normal. 7. In octanol solutions, τD was still very sensitive to temperature changes in most cells although in some the temperature sensitivity of τD was clearly reduced. Changes in τD with temperature could generally be fitted by the Arrhenius equation suggesting that a single step reaction controlled the decay of currents both in control and in octanol solutions. In some cells in which τD became less than 0·3 ms, the relationship between τD and temperature became inconsistent with the Arrhenius equation. 8. As the decay of end-plate currents in octanol solutions remains exponential, and the voltage and temperature sensitivity can be unchanged even when τD is significantly reduced, it seems likely that octanol decreases τD by increasing the rate of the reaction which normally controls the lifetime of end-plate channels. PMID:203674

High temperature current mirror amplifier

DOEpatents

Patterson, III, Raymond B.

1984-05-22

A high temperature current mirror amplifier having biasing means in the transdiode connection of the input transistor for producing a voltage to maintain the base-collector junction reversed-biased and a current means for maintaining a current through the biasing means at high temperatures so that the base-collector junction of the input transistor remained reversed-biased. For accuracy, a second current mirror is provided with a biasing means and current means on the input leg.

Optical voltage reference

DOEpatents

Rankin, R.; Kotter, D.

1994-04-26

An optical voltage reference for providing an alternative to a battery source is described. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function. 2 figures.

Research on resistance characteristics of YBCO tape under short-time DC large current impact

NASA Astrophysics Data System (ADS)

Zhang, Zhifeng; Yang, Jiabin; Qiu, Qingquan; Zhang, Guomin; Lin, Liangzhen

2017-06-01

Research of the resistance characteristics of YBCO tape under short-time DC large current impact is the foundation of the developing DC superconducting fault current limiter (SFCL) for voltage source converter-based high voltage direct current system (VSC-HVDC), which is one of the valid approaches to solve the problems of renewable energy integration. SFCL can limit DC short-circuit and enhance the interrupting capabilities of DC circuit breakers. In this paper, under short-time DC large current impacts, the resistance features of naked tape of YBCO tape are studied to find the resistance - temperature change rule and the maximum impact current. The influence of insulation for the resistance - temperature characteristics of YBCO tape is studied by comparison tests with naked tape and insulating tape in 77 K. The influence of operating temperature on the tape is also studied under subcooled liquid nitrogen condition. For the current impact security of YBCO tape, the critical current degradation and top temperature are analyzed and worked as judgment standards. The testing results is helpful for in developing SFCL in VSC-HVDC.

Current transport and capacitance-voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique

NASA Astrophysics Data System (ADS)

Nasr, Mahmoud; El Radaf, I. M.; Mansour, A. M.

2018-04-01

In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and scanning electron microscopy. The dark current-voltage characteristics of the heterojunction were investigated at different temperatures ranging from 298 to 398 K. The rectification factor, series resistance, shunt resistance, diode ideality factor, and effective barrier height (ϕb) were determined. The photovoltaic parameters were identified based on the current density-voltage characteristics under illumination. The capacitance-voltage characteristics showed that the junction was abrupt in nature.

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

2004-01-01

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Precision Voltage Referencing Techniques in MOS Technology.

NASA Astrophysics Data System (ADS)

Song, Bang-Sup

With the increasing complexity of functions on a single MOS chip, precision analog cicuits implemented in the same technology are in great demand so as to be integrated together with digital circuits. The future development of MOS data acquisition systems will require precision on-chip MOS voltage references. This dissertation will probe two most promising configurations of on-chip voltage references both in NMOS and CMOS technologies. In NMOS, an ion-implantation effect on the temperature behavior of MOS devices is investigated to identify the fundamental limiting factors of a threshold voltage difference as an NMOS voltage source. For this kind of voltage reference, the temperature stability on the order of 20ppm/(DEGREES)C is achievable with a shallow single-threshold implant and a low-current, high-body bias operation. In CMOS, a monolithic prototype bandgap reference is designed, fabricated and tested which embodies a curvature compensation and exhibits a minimized sensitivity to the process parameter variation. Experimental results imply that an average temperature stability on the order of 10ppm/(DEGREES)C with a production spread of less than 10ppm/(DEGREES)C feasible over the commercial temperature range.

A new curvature compensation technique for CMOS voltage reference using |VGS| and ΔVBE

NASA Astrophysics Data System (ADS)

Xuemin, Li; Mao, Ye; Gongyuan, Zhao; Yun, Zhang; Yiqiang, Zhao

2016-05-01

A new mixed curvature compensation technique for CMOS voltage reference is presented, which resorts to two sub-references with complementary temperature characteristics. The first sub-reference is the source-gate voltage |VGS|p of a PMOS transistor working in the saturated region. The second sub-reference is the weighted sum of gate-source voltages |VGS|n of NMOS transistors in the subthreshold region and the difference between two base-emitter voltages ΔVBE of bipolar junction transistors (BJTs). The voltage reference implemented utilizing the proposed curvature compensation technique exhibits a low temperature coefficient and occupies a small silicon area. The proposed technique was verified in 0.18 μm standard CMOS process technology. The performance of the circuit has been measured. The measured results show a temperature coefficient as low as 12.7 ppm/°C without trimming, over a temperature range from -40 to 120 °C, and the current consumption is 50 μA at room temperature. The measured power-supply rejection ratio (PSRR) is -31.2 dB @ 100 kHz. The circuit occupies an area of 0.045 mm2. Project supported by the National Natural Science Foundation of China (No. 61376032).

A Remote Monitoring System for Voltage, Current, Power and Temperature Measurements

NASA Astrophysics Data System (ADS)

Barakat, E.; Sinno, N.; Keyrouz, C.

This paper presents a study and design of a monitoring system for the continuous measurement of electrical energy parameters such as voltage, current, power and temperature. This system is designed to monitor the data remotely over internet. The electronic power meter is based on a microcontroller from Microchip Technology Inc. PIC family. The design takes into consideration the correct operation in the event of an outage or brown out by recording the electrical values and the temperatures in EEPROM internally available in the microcontroller. Also a digital display is used to show the acquired measurements. A computer will remotely monitor the data over internet.

Long-term temperature effects on GaAs solar cells

NASA Technical Reports Server (NTRS)

Heinbockel, J. H.; Hong, K. H.

1979-01-01

The thermal degradation of AlGaAs solar cells resulting from a long-term operation in a space environment is investigated. The solar cell degradation effects caused by zinc and aluminum diffusion as well as deterioration by arsenic evaporation are presented. Also, the results are presented of experimental testing and measurements of various GaAs solar cell properties while the solar cell was operating in the temperature range of 27 C to 350 C. In particular, the properties of light current voltage curves, dark current voltage curves, and spectral response characteristics are given. Finally, some theoretical models for the annealing of radiation damage over various times and temperatures are included.

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

NASA Astrophysics Data System (ADS)

Jian, Guangzhong; He, Qiming; Mu, Wenxiang; Fu, Bo; Dong, Hang; Qin, Yuan; Zhang, Ying; Xue, Huiwen; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tao, Xutang; Liu, Ming

2018-01-01

β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current-voltage and capacitance-voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ ¯ b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A.cm-2.K-2, which is close to the theoretical value of 41.11 A.cm-2.K-2. The differences between the barrier heights determined using the capacitance-voltage and current-voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.

Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

NASA Astrophysics Data System (ADS)

Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

2018-04-01

To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes

NASA Astrophysics Data System (ADS)

Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Rao, S.; Della Corte, F. G.

2015-07-01

In this work different experimental current-voltage behaviours of several Al implanted 4H-SiC p-i-n diodes are investigated by means of numerical simulations in a wide range of currents and temperatures. Some devices for which recombination and tunneling are the dominant current processes at all biases are classified as "leaky" diodes. The well behaved diodes, instead, show good rectifying characteristics with a current conduction due to tunneling below 1.7 V, recombination between 1.7 V and 2.5 V, and diffusion processes above 2.5 V. At higher current regimes, a series resistance in excess of 1 mΩ cm2 becomes the main current limiting factor. Depending on the relative weight between the contact resistances and the internal diode resistance, different temperature dependencies of the current are obtained. A good agreement between numerical and measured data is achieved employing temperature-dependent carrier lifetime and mobility as fitting parameters.

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2016-02-01

Our paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 degrees C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 degrees C. Moreover, the experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermalmore » model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Finally, numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.« less

Development of high temperature gallium phosphide rectifiers

NASA Technical Reports Server (NTRS)

Craford, M. G.; Keune, D. L.

1972-01-01

Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C.

Carrier Transport of Silver Nanowire Contact to p-GaN and its Influence on Leakage Current of LEDs

NASA Astrophysics Data System (ADS)

Oh, Munsik; Kang, Jae-Wook; Kim, Hyunsoo

2018-03-01

The authors investigated the silver nanowires (AgNWs) contact formed on p-GaN. Transmission line model applied to the AgNWs contact to p-GaN produced near ohmic contact with a specific contact resistance (ρ sc) of 10-1˜10-4 Ω·cm2. Noticeably, the contact resistance had a strong bias-voltage (or current-density) dependence associated with a local joule heating effect. Current-voltage-temperature (I-V-T) measurement revealed a strong temperature dependence with respect to ρ sc, indicating that the temperature played a key role of an enhanced carrier transport. The local joule heating at AgNW/GaN interface, however, resulted in a generation of leakage current of light-emitting diodes (LEDs) caused by degradation of AgNW contact.

High temperature current mirror amplifier

DOEpatents

Patterson, R.B. III.

1984-05-22

Disclosed is a high temperature current mirror amplifier having biasing means in the transdiode connection of the input transistor for producing a voltage to maintain the base-collector junction reversed-biased and a current means for maintaining a current through the biasing means at high temperatures so that the base-collector junction of the input transistor remained reversed-biased. For accuracy, a second current mirror is provided with a biasing means and current means on the input leg. 2 figs.

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

NASA Astrophysics Data System (ADS)

Asada, M.; Suzuki, S.; Fukuma, T.

2017-11-01

The temperature dependences of output power, oscillation frequency, and current-voltage curve are measured for resonant-tunneling-diode terahertz (THz) oscillators. The output power largely changes with temperature owing to the change in Ohmic loss. In contrast to the output power, the oscillation frequency and current-voltage curve are almost insensitive to temperature. The measured temperature dependence of output power is compared with the theoretical calculation including the negative differential conductance (NDC) as a fitting parameter assumed to be independent of temperature. Very good agreement was obtained between the measurement and calculation, and the NDC in the THz frequency region is estimated. The results show that the absolute values of NDC in the THz region significantly decrease relative to that at DC, and increases with increasing frequency in the measured frequency range.

High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

NASA Astrophysics Data System (ADS)

Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

2018-06-01

The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

Temperature, illumination, and fluence dependence of current and voltage in electron irradiated solar cells

NASA Technical Reports Server (NTRS)

Faith, T. J.; Obenschain, A. F.

1974-01-01

Empirical equations have been derived from measurements of solar cell photovoltaic characteristics relating light-generated current and open circuit voltage to cell temperature, intensity of illumination and 1-MeV electron fluence. Both 2-ohm-cm and 10-ohm-cm cells were tested over the temperature range from 120 to 470 K, the illumination intensity range from 5 to 1830 mW/sq cm, and the electron fluence range from 1 x 10 to the 13th to 1 x 10 to the 16th electrons/sq cm. The normalized temperature coefficient of the light generated current varies as the 0.18 power of the fluence for temperatures above approximately 273 K and is independent of fluence at lower temperatures. At 140 mW/sq cm, a power law expression was derived which shows that the light-generated current decreases at a rate proportional to the 0.153 power of the fluence for both resistivities. The coefficient of the expression is larger for 2-ohm-cm cells; consequently, the advantage for 10-ohm-cm cells increased with increasing fluence.

Numerical investigation of the effect of driving voltage pulse shapes on the characteristics of low-pressure argon dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eslami, E., E-mail: eeslami@iust.ac.ir; Barjasteh, A.; Morshedian, N.

2015-06-15

In this work, we numerically compare the effect of a sinusoidal, triangular, and rectangular pulsed voltage profile on the calculated particle production, electric current, and gas voltage in a dielectric barrier discharge. The total argon gas pressure of 400 Pa, the distance between dielectrics of 5 mm, the dielectric thickness of 0.7 mm, and the temperature of T = 300 K were considered as input parameters. The different driving voltage pulse shapes (triangular, rectangular, and sinusoidal) are considered as applied voltage with a frequency of 7 kHz and an amplitude of 700 V peak to peak. It is shown thatmore » applying a rectangular voltage, as compared with a sinusoidal or triangle voltage, increases the current peak, while the peak width is decreased. Higher current density is related to high production of charged particles, which leads to the generation of some highly active species, such as Ar* (4s level), and Ar** (4p level) in the gap.« less

Method to improve reliability of a fuel cell system using low performance cell detection at low power operation

DOEpatents

Choi, Tayoung; Ganapathy, Sriram; Jung, Jaehak; Savage, David R.; Lakshmanan, Balasubramanian; Vecasey, Pamela M.

2013-04-16

A system and method for detecting a low performing cell in a fuel cell stack using measured cell voltages. The method includes determining that the fuel cell stack is running, the stack coolant temperature is above a certain temperature and the stack current density is within a relatively low power range. The method further includes calculating the average cell voltage, and determining whether the difference between the average cell voltage and the minimum cell voltage is greater than a predetermined threshold. If the difference between the average cell voltage and the minimum cell voltage is greater than the predetermined threshold and the minimum cell voltage is less than another predetermined threshold, then the method increments a low performing cell timer. A ratio of the low performing cell timer and a system run timer is calculated to identify a low performing cell.

Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

NASA Astrophysics Data System (ADS)

Jehl, Zacharie; Suchet, Daniel; Julian, Anatole; Bernard, Cyril; Miyashita, Naoya; Gibelli, Francois; Okada, Yoshitaka; Guillemolles, Jean-Francois

2017-02-01

Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

Cascaded Emission Regions in 2.4 μm GaInAsSb Light Emitting Diode's for Improved Current Efficiency

NASA Astrophysics Data System (ADS)

Prineas, John; Yager, Jeff; Olesberg, Jonathon; Cao, Chuanshun; Reddy, Madhu; Coretsopoulos, Chris

2008-03-01

Infrared optoelectronics play an important role in sensing of molecules through characteristic vibrational resonances that occur at those wavelengths. For molecules in aqueous and at room temperature, where optical transistions tend to be broad, the broadband emission of light emitting diodes (LEDs) are well suited for obtaining molecular absorption spectra. The 2-2.6 μm range is an advantageous range for sensing of glucose. Voltages available in batteries and control electronics are limited to much higher voltages than those required to turn on an infrared LED, and moreover have limited current supply. Here, we demonstrate room temperature operature of 5-stage cascaded emission regions in 2-2.6 μm GaInAsSb LEDs. We report three times higher turn on voltage, and nine times improved current efficiency compared to a single stage device.

Power Generation Evaluated on a Bismuth Telluride Unicouple Module

NASA Astrophysics Data System (ADS)

Hu, Xiaokai; Nagase, Kazuo; Jood, Priyanka; Ohta, Michihiro; Yamamoto, Atsushi

2015-06-01

The power generated by a thermoelectric unicouple module made of Bi2Te3 alloy was evaluated by use of a newly developed instrument. An electrical load was connected to the module, and the terminal voltage and output power of the module were obtained by altering electric current. Water flow was used to cool the cold side of the module and for heat flow measurement, by monitoring inlet and outlet temperatures. When the electric current was increased, heat flow was enhanced as a result of the Peltier effect and Joule heating. Voltage, power, heat flow, and efficiency as functions of current were determined for hot-side temperatures from 50 to 220°C. Maximum power output and peak conversion efficiency could thus be easily derived for each temperature.

A novel method for in-situ monitoring of local voltage, temperature and humidity distributions in fuel cells using flexible multi-functional micro sensors.

PubMed

Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

2011-01-01

In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it.

A Novel Method for In-Situ Monitoring of Local Voltage, Temperature and Humidity Distributions in Fuel Cells Using Flexible Multi-Functional Micro Sensors

PubMed Central

Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

2011-01-01

In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it. PMID:22319361

Nonequilibrium self-energies, Ng approach, and heat current of a nanodevice for small bias voltage and temperature

NASA Astrophysics Data System (ADS)

Aligia, A. A.

2014-03-01

Using nonequilibrium renormalized perturbation theory to second order in the renormalized Coulomb repulsion, we calculate the lesser Σ< and and greater Σ> self-energies of the impurity Anderson model, which describes the current through a quantum dot, in the general asymmetric case. While in general a numerical integration is required to evaluate the perturbative result, we derive an analytical approximation for small frequency ω, bias voltage V, and temperature T, which is exact to total second order in these quantities. The approximation is valid when the corresponding energies ℏω, eV, and kBT are small compared to kBTK, where TK is the Kondo temperature. The result of the numerical integration is compared with the analytical one and with Ng approximation, in which Σ< and Σ> are assumed proportional to the retarded self-energy Σr times an average Fermi function. While it fails at T =0 for ℏ |ω|≲eV, we find that the Ng approximation is excellent for kBT>eV/2 and improves for asymmetric coupling to the leads. Even at T =0, the effect of the Ng approximation on the total occupation at the dot is very small. The dependence on ω and V are discussed in comparison with a Ward identity that is fulfilled by the three approaches. We also calculate the heat currents between the dot and any of the leads at finite bias voltage. One of the heat currents changes sign with the applied bias voltage at finite temperature.

Tuned-circuit dual-mode Johnson noise thermometers

NASA Astrophysics Data System (ADS)

Shepard, R. L.; Carroll, R. M.; Falter, D. D.; Blalock, T. V.; Roberts, M. J.

1992-02-01

Dual-mode Johnson noise and direct current (DC) resistance thermometers can be used in control systems where prompt indications of temperature changes and long-term accuracy are needed. Such a thermometer is being developed for the SP-100 space nuclear electric power system that requires temperature measurement at 1400 K in space for 10 years, of which 7 are expected to be at full reactor power. Several direct coupled and transformer coupled, tuned resistance inductance capacitance (RLC) circuits that produce a single, continuous voltage signal were evaluated for noise temperature measurement. The simple direct coupled RLC circuit selected provides a mean squared noise voltage that depends only on the capacitance used and the temperature of the sensor, and it is independent of the value of or changes in the sensor resistance. These circuits provide a noise signal with long term accuracy but require integrating noise signals for a finite length of time. The four wire resistor for the noise temperature sensor allows simultaneous DC resistance measurements to be made that provide a prompt, continuous temperature indication signal. The DC current mode is employed continuously, and a noise voltage measurement is made periodically to correct the temperature indication. The differential noise voltage preamplifier used substantially reduces electromagnetic interference (EMI) in the system. A sensor has been tested that should provide good performance (+/- 1 percent accuracy) and long-term (10 year) reliability in space environments. Accurate noise temperature measurements were made at temperatures above 1300 K, where significant insulator shunting occurs, even though shunting does affect the dc resistance measurements and makes the system more susceptible to EMI.

Computer acquired performance data from a chemically vapor-deposited-rhenium, niobium planar diode

NASA Technical Reports Server (NTRS)

Manista, E. J.; Morris, J. F.; Smith, A. L.; Lancashire, R. B.

1973-01-01

Performance data from a chemically vapor-deposited-rhenium, niobium thermionic converter are presented. The planar converter has a guard-ringed collector and a nominal fixed spacing of 0.25 mm (10 mils). The data were obtained by using a computerized acquisition system and are available on request to one of the authors on microfiche as individual and composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E collector T sub C, and cesium reservoir T sub R. The composite plots have constant T sub E and varying T sub C or T sub R, or both. Current, voltage envelopes having constant T sub E with and without fixed T sub C appear in the present report. The diode was tested at increments between 1600 and 2000 K for the emitter Hohlraum, 800 to 1100 K for the collector, and 540 and 650 K for the reservoir. A total of 312 current, voltage curves were obtained in the present performance evaluation. Current, voltage envelopes from three rhenium emitter converters evaluated in the present program are also given. The data are compared at commom emitter Hohlraum temperatures.

Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Hartmann, F.; Pfenning, A.; Rebello Sousa Dias, M.; Langer, F.; Höfling, S.; Kamp, M.; Worschech, L.; Castelano, L. K.; Marques, G. E.; Lopez-Richard, V.

2017-10-01

We study the electroluminescence (EL) emission of purely n-doped resonant tunneling diodes in a wide temperature range. The paper demonstrates that the EL originates from impact ionization and radiative recombination in the extended collector region of the tunneling device. Bistable current-voltage response and EL are detected and their respective high and low states are tuned under varying temperature. The bistability of the EL intensity can be switched from direct to inverted with respect to the tunneling current and the optical on/off ratio can be enhanced with increasing temperature. One order of magnitude amplification of the optical on/off ratio can be attained compared to the electrical one. Our observation can be explained by an interplay of moderate peak-to-valley current ratios, large resonance voltages, and electron energy loss mechanisms, and thus, could be applied as an alternative route towards optoelectronic applications of tunneling devices.

Design of a Programmable Gain, Temperature Compensated Current-Input Current-Output CMOS Logarithmic Amplifier.

PubMed

Ming Gu; Chakrabartty, Shantanu

2014-06-01

This paper presents the design of a programmable gain, temperature compensated, current-mode CMOS logarithmic amplifier that can be used for biomedical signal processing. Unlike conventional logarithmic amplifiers that use a transimpedance technique to generate a voltage signal as a logarithmic function of the input current, the proposed approach directly produces a current output as a logarithmic function of the input current. Also, unlike a conventional transimpedance amplifier the gain of the proposed logarithmic amplifier can be programmed using floating-gate trimming circuits. The synthesis of the proposed circuit is based on the Hart's extended translinear principle which involves embedding a floating-voltage source and a linear resistive element within a translinear loop. Temperature compensation is then achieved using a translinear-based resistive cancelation technique. Measured results from prototypes fabricated in a 0.5 μm CMOS process show that the amplifier has an input dynamic range of 120 dB and a temperature sensitivity of 230 ppm/°C (27 °C- 57°C), while consuming less than 100 nW of power.

Leakage current transport mechanism under reverse bias in Au/Ni/GaN Schottky barrier diode

NASA Astrophysics Data System (ADS)

Peta, Koteswara Rao; Kim, Moon Deock

2018-01-01

The leakage current transport mechanism under reverse bias of Au/Ni/GaN Schottky diode is studied using temperature dependent current-voltage (I-V-T) and capacitance-voltage (C-V) characteristics. I-V measurement in this study is in the range of 140 K-420 K in steps of 10 K. A reduction in voltage dependent barrier height and a strong internal electric field in depletion region under reverse bias suggested electric field enhanced thermionic emission in carrier transport via defect states in Au/Ni/GaN SBD. A detailed analysis of reverse leakage current revealed two different predominant transport mechanisms namely variable-range hopping (VRH) and Poole-Frenkel (PF) emission conduction at low (<260 K) and high (>260 K) temperatures respectively. The estimated thermal activation energies (0.20-0.39 eV) from Arrhenius plot indicates a trap assisted tunneling of thermally activated electrons from a deep trap state into a continuum of states associated with each conductive threading dislocation.

Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

NASA Astrophysics Data System (ADS)

He, Qiming; Mu, Wenxiang; Dong, Hang; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tang, Minghua; Tao, Xutang; Liu, Ming

2017-02-01

The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/β-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 1010, ideality factor (n) of 1.1, Schottky barrier height (ΦB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance (RON) of 12.5 mΩ.cm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current density (J0) of 2 × 10-16 A/cm2. The effective donor concentration Nd - Na was calculated to be about 2.3 × 1014 cm3. Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 °C. With increasing temperature, parameters such as RON and J@2V become better, proving that the diode can work well at high temperature. The EFG grown β-Ga2O3 single crystal is a promising material to be used in the power devices.

A theoretical analysis of the current-voltage characteristics of solar cells

NASA Technical Reports Server (NTRS)

Fang, R. C. Y.; Hauser, J. R.

1979-01-01

The following topics are discussed: (1) dark current-voltage characteristics of solar cells; (2) high efficiency silicon solar cells; (3) short circuit current density as a function of temperature and the radiation intensity; (4) Keldysh-Franz effects and silicon solar cells; (5) thin silicon solar cells; (6) optimum solar cell designs for concentrated sunlight; (7) nonuniform illumination effects of a solar cell; and (8) high-low junction emitter solar cells.

Two ways to model voltage current curves of adiabatic MgB2 wires

NASA Astrophysics Data System (ADS)

Stenvall, A.; Korpela, A.; Lehtonen, J.; Mikkonen, R.

2007-08-01

Usually overheating of the sample destroys attempts to measure voltage-current curves of conduction cooled high critical current MgB2 wires at low temperatures. Typically, when a quench occurs a wire burns out due to massive heat generation and negligible cooling. It has also been suggested that high n values measured with MgB2 wires and coils are not an intrinsic property of the material but arise due to heating during the voltage-current measurement. In addition, quite recently low n values for MgB2 wires have been reported. In order to find out the real properties of MgB2 an efficient computational model is required to simulate the voltage-current measurement. In this paper we go back to basics and consider two models to couple electromagnetic and thermal phenomena. In the first model the magnetization losses are computed according to the critical state model and the flux creep losses are considered separately. In the second model the superconductor resistivity is described by the widely used power law. Then the coupled current diffusion and heat conduction equations are solved with the finite element method. In order to compare the models, example runs are carried out with an adiabatic slab. Both models produce a similar significant temperature rise near the critical current which leads to fictitiously high n values.

Solar panel acceptance testing using a pulsed solar simulator

NASA Technical Reports Server (NTRS)

Hershey, T. L.

1977-01-01

Utilizing specific parameters as area of an individual cell, number in series and parallel, and established coefficient of current and voltage temperature dependence, a solar array irradiated with one solar constant at AMO and at ambient temperature can be characterized by a current-voltage curve for different intensities, temperatures, and even different configurations. Calibration techniques include: uniformity in area, depth and time, absolute and transfer irradiance standards, dynamic and functional check out procedures. Typical data are given for individual cell (2x2 cm) to complete flat solar array (5x5 feet) with 2660 cells and on cylindrical test items with up to 10,000 cells. The time and energy saving of such testing techniques are emphasized.

Nanosecond repetitively pulsed discharges in air at atmospheric pressure—the spark regime

NASA Astrophysics Data System (ADS)

Pai, David Z.; Lacoste, Deanna A.; Laux, Christophe O.

2010-12-01

Nanosecond repetitively pulsed (NRP) spark discharges have been studied in atmospheric pressure air preheated to 1000 K. Measurements of spark initiation and stability, plasma dynamics, gas temperature and current-voltage characteristics of the spark regime are presented. Using 10 ns pulses applied repetitively at 30 kHz, we find that 2-400 pulses are required to initiate the spark, depending on the applied voltage. Furthermore, about 30-50 pulses are required for the spark discharge to reach steady state, following initiation. Based on space- and time-resolved optical emission spectroscopy, the spark discharge in steady state is found to ignite homogeneously in the discharge gap, without evidence of an initial streamer. Using measured emission from the N2 (C-B) 0-0 band, it is found that the gas temperature rises by several thousand Kelvin in the span of about 30 ns following the application of the high-voltage pulse. Current-voltage measurements show that up to 20-40 A of conduction current is generated, which corresponds to an electron number density of up to 1015 cm-3 towards the end of the high-voltage pulse. The discharge dynamics, gas temperature and electron number density are consistent with a streamer-less spark that develops homogeneously through avalanche ionization in volume. This occurs because the pre-ionization electron number density of about 1011 cm-3 produced by the high frequency train of pulses is above the critical density for streamer-less discharge development, which is shown to be about 108 cm-3.

Spin and charge thermopower effects in the ferromagnetic graphene junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vahedi, Javad, E-mail: javahedi@gmail.com; Center for Theoretical Physics of Complex Systems, Institute for Basic Science; Barimani, Fattaneh

2016-08-28

Using wave function matching approach and employing the Landauer-Buttiker formula, a ferromagnetic graphene junction with temperature gradient across the system is studied. We calculate the thermally induced charge and spin current as well as the thermoelectric voltage (Seebeck effect) in the linear and nonlinear regimes. Our calculation revealed that due to the electron-hole symmetry, the charge Seebeck coefficient is, for an undoped magnetic graphene, an odd function of chemical potential while the spin Seebeck coefficient is an even function regardless of the temperature gradient and junction length. We have also found with an accurate tuning external parameter, namely, the exchangemore » filed and gate voltage, the temperature gradient across the junction drives a pure spin current without accompanying the charge current. Another important characteristic of thermoelectric transport, thermally induced current in the nonlinear regime, is examined. It would be our main finding that with increasing thermal gradient applied to the junction the spin and charge thermovoltages decrease and even become zero for non zero temperature bias.« less

Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature

NASA Astrophysics Data System (ADS)

Sun, Jia; Wan, Qing; Lu, Aixia; Jiang, Jie

2009-11-01

Battery drivable low-voltage SnO2-based paper thin-film transistors with a near-zero threshold voltage (Vth=0.06 V) gated by microporous SiO2 dielectric with electric-double-layer (EDL) effect are fabricated at room temperature. The operating voltage is found to be as low as 1.5 V due to the huge gate specific capacitance (1.34 μF/cm2 at 40 Hz) related to EDL formation. The subthreshold gate voltage swing and current on/off ratio is found to be 82 mV/decade and 2.0×105, respectively. The electron field-effect mobility is estimated to be 47.3 cm2/V s based on the measured gate specific capacitance at 40 Hz.

Fuzzy control of battery chargers

NASA Astrophysics Data System (ADS)

Aldridge, Jack

1996-03-01

The increasing reliance on battery power for portable terrestrial purposes, such as portable tools, portable computers, and telecommunications, provides motivation to optimize the battery charging process with respect to speed of charging and charging cycle lifetime of the battery. Fuzzy control, implemented on a small microcomputer, optimizes charging in the presence of nonlinear effects and large uncertainty in the voltage vs. charge state characteristics for the battery. Use of a small microcontroller makes possible a small, capable, and affordable package for the charger. Microcontroller-based chargers provide improved performance by adjusting both charging voltage and charging current during the entire charging process depending on a current estimate of the state of charge of the battery. The estimate is derived from the zero-current voltage of the battery and the temperature and their rates of change. All of these quantities are uncertain due to the variation in condition between the individual cells in a battery, the rapid and nonlinear dependence of the fundamental electrochemistry on the internal temperature, and the placement of a single temperature sensor within the battery package. While monitoring the individual cell voltages and temperatures would be desirable, cost and complexity considerations preclude the practice. NASA has developed considerable technology in batteries for supplying significant amounts of power for spacecraft and in fuzzy control techniques for the space applications. In this paper, we describe how we are using both technologies to build an optimal charger prototype as a precursor to a commercial version.

How to interpret current-voltage relationships of blocking grain boundaries in oxygen ionic conductors.

PubMed

Kim, Seong K; Khodorov, Sergey; Chen, Chien-Ting; Kim, Sangtae; Lubomirsky, Igor

2013-06-14

A new model based on a linear diffusion equation is proposed to explain the current-voltage characteristics of blocking grain boundaries in Y-doped CeO2 in particular. One can also expect that the model can be applicable to the ionic conductors with blocking grain boundaries, in general. The model considers an infinitely long chain of identical grains separated by grain boundaries, which are treated as regions in which depletion layers of mobile ions are formed due to trapping of immobile charges that do not depend on the applied voltage as well as temperature. The model assumes that (1) the grain boundaries do not represent physical blocking layers, which implies that if there is a second phase at the grain boundaries, then it is too thin to impede ion diffusion and (2) the ions follow Boltzmann distribution throughout the materials. Despite its simplicity, the model successfully reproduces the "power law": current proportional to voltage power n and illustrated with the experimental example of Y-doped ceria. The model also correctly predicts that the product nT, where T is the temperature in K, is constant and is proportional to the grain boundary potential as long as the charge at the grain boundaries remains trapped. The latter allows its direct determination from the current-voltage characteristics and promises considerable simplification in the analysis of the electrical characteristics of the grain boundaries with respect to the models currently in use.

High-conductance low-voltage organic thin film transistor with locally rearranged poly(3-hexylthiophene) domain by current annealing on plastic substrate

NASA Astrophysics Data System (ADS)

Pei, Zingway; Tsai, Hsing-Wang; Lai, Hsin-Cheng

2016-02-01

The organic material based thin film transistors (TFTs) are attractive for flexible optoelectronics applications due to the ability of lager area fabrication by solution and low temperature process on plastic substrate. Recently, the research of organic TFT focus on low operation voltage and high output current to achieve a low power organic logic circuit for optoelectronic device,such as e-paper or OLED displayer. To obtain low voltage and high output current, high gate capacitance and high channel mobility are key factors. The well-arranged polymer chain by a high temperature postannealing, leading enhancement conductivity of polymer film was a general method. However, the thermal annealing applying heat for all device on the substrate and may not applicable to plastic substrate. Therefore, in this work, the low operation voltage and high output current of polymer TFTs was demonstrated by locally electrical bias annealing. The poly(styrene-comethyl methacrylate) (PS-r-PMMA) with ultra-thin thickness is used as gate dielectric that the thickness is controlled by thermal treatment after spin coated on organic electrode. In electrical bias-annealing process, the PS-r- PMMA is acted a heating layer. After electrical bias-annealing, the polymer TFTs obtain high channel mobility at low voltage that lead high output current by a locally annealing of P3HT film. In the future, the locally electrical biasannealing method could be applied on plastic substrate for flexible optoelectronic application.

Transport characteristics of μ-SQUIDs for probing magnetism

NASA Astrophysics Data System (ADS)

Biswas, Sourav; Paul, Sagar; Parashari, Harsh; Winkelmann, Clemens B.; Courtois, Hervé; Gupta, Anjan K.

2018-04-01

We study the transport properties of niobium (Nb) based micron sized superconducting quantum interference devices (μ-SQUID), which are designed to eliminate thermal hysteresis down to 1.3 K. Current-voltage characteristics are non-hysterestic at the lowest temperature. Large voltage oscillations with magnetic field are observed for a wide range of bias currents with good flux sensitivity and reduced flux noise. However, devices with fins and devices on sapphire substrate show hysteresis for wide range of bath temperature. We have also been able to see the sign of magnetic response from a single micron size ferromagnetic permalloy ellipse using the μ-SQUID.

Voltage current characteristics of type III superconductors

NASA Astrophysics Data System (ADS)

Dorofejev, G. L.; Imenitov, A. B.; Klimenko, E. Yu.

1980-06-01

An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogenious monofilament and multifilament Nb-Ti, Nb-Zr, Nb 3Sn wires were investigated in different ranges of magnetic field, temperature and current. The longitudinal electric field for homogenious wires may be described by E=J ρnexp- T c/T 0+ T/T 0+ B/B 0+ J/J 0, where To, Bo, Jo are the increasing parameters, which depend weakly on B and T, of the electric field. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (ie the surface corresponding to a certain conventional effective resistivity in T, B, J - space) and a description of any increasing parameter that depends on B and T.

Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice.

PubMed

Yin, Zhizhen; Song, Helun; Zhang, Yaohui; Ruiz-García, Miguel; Carretero, Manuel; Bonilla, Luis L; Biermann, Klaus; Grahn, Holger T

2017-01-01

Noise-enhanced chaos in a doped, weakly coupled GaAs/Al_{0.45}Ga_{0.55}As superlattice has been observed at room temperature in experiments as well as in the results of the simulation of nonlinear transport based on a discrete tunneling model. When external noise is added, both the measured and simulated current-versus-time traces contain irregularly spaced spikes for particular applied voltages, which separate a regime of periodic current oscillations from a region of no current oscillations at all. In the voltage region without current oscillations, the electric-field profile consist of a low-field domain near the emitter contact separated by a domain wall consisting of a charge accumulation layer from a high-field regime closer to the collector contact. With increasing noise amplitude, spontaneous chaotic current oscillations appear over a wider bias voltage range. For these bias voltages, the domain boundary between the two electric-field domains becomes unstable and very small current or voltage fluctuations can trigger the domain boundary to move toward the collector and induce chaotic current spikes. The experimentally observed features are qualitatively very well reproduced by the simulations. Increased noise can consequently enhance chaotic current oscillations in semiconductor superlattices.

Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice

NASA Astrophysics Data System (ADS)

Yin, Zhizhen; Song, Helun; Zhang, Yaohui; Ruiz-García, Miguel; Carretero, Manuel; Bonilla, Luis L.; Biermann, Klaus; Grahn, Holger T.

2017-01-01

Noise-enhanced chaos in a doped, weakly coupled GaAs /Al0.45Ga0.55As superlattice has been observed at room temperature in experiments as well as in the results of the simulation of nonlinear transport based on a discrete tunneling model. When external noise is added, both the measured and simulated current-versus-time traces contain irregularly spaced spikes for particular applied voltages, which separate a regime of periodic current oscillations from a region of no current oscillations at all. In the voltage region without current oscillations, the electric-field profile consist of a low-field domain near the emitter contact separated by a domain wall consisting of a charge accumulation layer from a high-field regime closer to the collector contact. With increasing noise amplitude, spontaneous chaotic current oscillations appear over a wider bias voltage range. For these bias voltages, the domain boundary between the two electric-field domains becomes unstable and very small current or voltage fluctuations can trigger the domain boundary to move toward the collector and induce chaotic current spikes. The experimentally observed features are qualitatively very well reproduced by the simulations. Increased noise can consequently enhance chaotic current oscillations in semiconductor superlattices.

Non-invasive probe diagnostic method for electron temperature and ion current density in atmospheric pressure plasma jet source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Young-Cheol; Kim, Yu-Sin; Lee, Hyo-Chang

2015-08-15

The electrical probe diagnostics are very hard to be applied to atmospheric plasmas due to severe perturbation by the electrical probes. To overcome this, the probe for measuring electron temperature and ion current density is indirectly contacted with an atmospheric jet source. The plasma parameters are obtained by using floating harmonic analysis. The probe is mounted on the quartz tube that surrounds plasma. When a sinusoidal voltage is applied to a probe contacting on a quartz tube, the electrons near the sheath at dielectric tube are collected and the probe current has harmonic components due to probe sheath nonlinearity. Frommore » the relation of the harmonic currents and amplitude of the sheath voltage, the electron temperature near the wall can be obtained with collisional sheath model. The electron temperatures and ion current densities measured at the discharge region are in the ranges of 2.7–3.4 eV and 1.7–5.2 mA/cm{sup 2} at various flow rates and input powers.« less

Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuits for Active Matrix Organic Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yu-Sheng; Liu, Yan-Wei

A new pixel design and driving method for active matrix organic light emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage programming method are proposed and verified using the SPICE simulator. We had employed an appropriate TFT model in SPICE simulation to demonstrate the performance of the pixel circuit. The OLED anode voltage variation error rates are below 0.35% under driving TFT threshold voltage deviation (Δ Vth =± 0.33V). The OLED current non-uniformity caused by the OLED threshold voltage degradation (Δ VTO =+0.33V) is significantly reduced (below 6%). The simulation results show that the pixel design can improve the display image non-uniformity by compensating for the threshold voltage deviation in the driving TFT and the OLED threshold voltage degradation at the same time.

Fabrication and electrical characterization of Al/diazo compound containing polyoxy chain/p-Si device structure

NASA Astrophysics Data System (ADS)

Birel, Ozgul; Kavasoglu, Nese; Kavasoglu, A. Sertap; Dincalp, Haluk; Metin, Bengul

2013-03-01

Diazo-compounds are important class of chemical compounds in terms of optical and electronic properties which make them potentially attractive for device applications. Diazo compound containing polyoxy chain has been deposited on p-Si. Current-voltage characteristics of Al/diazo compound containing polyoxy chain/p-Si structure present rectifying behaviour. The Schottky barrier height (SBH), diode factor (n), reverse saturation current (Io), interface state density (Nss) of Al/diazo compound containing polyoxy chain/p-Si structure have been calculated from experimental forward bias current-voltage data measured in the temperature range 100-320 K and capacitance-voltage data measured at room temperature and 1 MHz. The calculated values of SBH have ranged from 0.041 and 0.151 eV for the high and low temperature regions. Diode factor values fluctuate between the values 14 and 18 with temperature. Such a high diode factors stem from disordered interface layer in a junction structure as stated by Brötzmann et al. [M. Brötzmann, U. Vetter, H. Hofsäss, J. Appl. Phys. 106 (2009) 063704]. The calculated values of saturation current have ranged from 3×10-11 A to 2.79×10-7 A and interface state density have ranged from 5×1011 eV-1 cm-2 and 4×1013 eV-1 cm-2 as temperature increases. Results show that Al/diazo compound containing polyoxy chain/p-Si structure is a valuable candidate for device applications in terms of low reverse saturation current and low interface state density.

Straight and chopped dc performance data for a General Electric 5BT 2366C10 motor and an EV-1 controller

NASA Technical Reports Server (NTRS)

Edie, P. C.

1981-01-01

Performance data on the General Electric 5BT 2366C10 series wound dc motor and EV-1 Chopper Controller is supplied for the electric vehicle manufacturer. Data is provided for both straight and chopped dc input to the motor, at 2 motor temperature levels. Testing was done at 6 voltage increments to the motor, and 2 voltage increments to the controller. Data results are presented in both tabular and graphical forms. Tabular information includes motor voltage and current input data, motor speed and torque output data, power data and temperature data. Graphical information includes torque-speed, motor power output-speed, torque-current, and efficiency-speed plots under the various operating conditions. The data resulting from this testing shows the speed-torque plots to have the most variance with operating temperature. The maximum motor efficiency is between 86% and 87%, regardless of temperature or mode of operation. When the chopper is utilized, maximum motor efficiency occurs when the chopper duty cycle approaches 100%.

Properties and Applications of Varistor-Transistor Hybrid Devices

NASA Astrophysics Data System (ADS)

Pandey, R. K.; Stapleton, William A.; Sutanto, Ivan; Scantlin, Amanda A.; Lin, Sidney

2014-05-01

The nonlinear current-voltage characteristics of a varistor device are modified with the help of external agents, resulting in tuned varistor-transistor hybrid devices with multiple applications. The substrate used to produce these hybrid devices belongs to the modified iron titanate family with chemical formula 0.55FeTiO3·0.45Fe2O3 (IHC45), which is a prominent member of the ilmenite-hematite solid-solution series. It is a wide-bandgap magnetic oxide semiconductor. Electrical resistivity and Seebeck coefficient measurements from room temperature to about 700°C confirm that it retains its p-type nature for the entire temperature range. The direct-current (DC) and alternating-current (AC) properties of these hybrid devices are discussed and their applications identified. It is shown here that such varistor embedded ceramic transistors with many interesting properties and applications can be mass produced using incredibly simple structures. The tuned varistors by themselves can be used for current amplification and band-pass filters. The transistors on the other hand could be used to produce sensors, voltage-controlled current sources, current-controlled voltage sources, signal amplifiers, and low-band-pass filters. We believe that these devices could be suitable for a number of applications in consumer and defense electronics, high-temperature and space electronics, bioelectronics, and possibly also for electronics specific to handheld devices.

Time dependent and temperature dependent properties of the forward voltage characteristic of InGaN high power LEDs

NASA Astrophysics Data System (ADS)

Fulmek, P. L.; Haumer, P.; Wenzl, F. P.; Nemitz, W.; Nicolics, J.

2017-03-01

Estimating the junction temperature and its dynamic behavior in dependence of various operating conditions is an important issue, since these properties influence the optical characteristics as well as the aging processes of a light-emitting diode (LED). Particularly for high-power LEDs and pulsed operation, the dynamic behavior and the resulting thermal cycles are of interest. The forward voltage method relies on the existence of a time-independent unique triple of forward-voltage, forward-current, and junction temperature. These three figures should as well uniquely define the optical output power and spectrum, as well as the loss power of the LED, which is responsible for an increase of the junction temperature. From transient FEM-simulations one may expect an increase of the temperature of the active semiconductor layer of some 1/10 K within the first 10 μs. Most of the well-established techniques for junction temperature measurement via forward voltage method evaluate the measurement data several dozens of microseconds after switching on or switching off and estimate the junction temperature by extrapolation towards the time of switching. In contrast, the authors developed a measurement procedure with the focus on the first microseconds after switching. Besides a fast data acquisition system, a precise control of the switching process is required, i.e. a precisely defined current pulse amplitude with fast rise-time and negligible transient by-effects. We start with a short description of the measurement setup and the newly developed control algorithm for the generation of short current pulses. The thermal characterization of the LED chip during the measurement procedures is accomplished by an IR thermography system and transient finite element simulations. The same experimental setup is used to investigate the optical properties of the LED in an Ulbricht-sphere. Our experiments are performed on InGaN LED chips mounted on an Al based insulated metal substrate (IMS), giving a comprehensive picture of the transient behavior of the forward voltage of this type of high power LED.

Apparatus and Method for Compensating for Process, Voltage, and Temperature Variation of the Time Delay of a Digital Delay Line

NASA Technical Reports Server (NTRS)

Seefeldt, James (Inventor); Feng, Xiaoxin (Inventor); Roper, Weston (Inventor)

2013-01-01

A process, voltage, and temperature (PVT) compensation circuit and a method of continuously generating a delay measure are provided. The compensation circuit includes two delay lines, each delay line providing a delay output. The two delay lines may each include a number of delay elements, which in turn may include one or more current-starved inverters. The number of delay lines may differ between the two delay lines. The delay outputs are provided to a combining circuit that determines an offset pulse based on the two delay outputs and then averages the voltage of the offset pulse to determine a delay measure. The delay measure may be one or more currents or voltages indicating an amount of PVT compensation to apply to input or output signals of an application circuit, such as a memory-bus driver, dynamic random access memory (DRAM), a synchronous DRAM, a processor or other clocked circuit.

Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects

NASA Astrophysics Data System (ADS)

Takamiya, Saburo; Sonoda, Takuji; Yamanouchi, Masahide; Fujioka, Takashi; Kohno, Masaki

1997-03-01

Theoretical expressions for thermal and electrical feedback effects are derived. These limit the power capability of a power FET and lead a device to catastrophic breakdown (source-drain burnout) when the loop gain of the former reaches unity. Field emission of thermally excited electrons at the Schottky gate plays the key role in thermal feedback, while holes being impact ionized by the drain current play a similar role in the electrical feedback. Thermal feedback is dominant in a high temperature and low drain voltage area. Electrical feedback is dominant in a high drain voltage and low temperature area. In the first area, a high junction temperature is the main factor causing the thermal runaway of the device. In the second area, the electrcal feedback increases the drain current and the temperature and gives a trigger to the thermal feedback so that it reaches unity more easily. Both effects become significant in proportion to transconductance and gate bias resistance, and cause simultaneous runaway of the gate and drain currents. The expressions of the loop gains clearly indicate the safe operating conditions for a power FET. C-band 4 W (1 chip) and 16 W (4 chip) GaAs MESFETs were used as the experimental samples. With these devices the simultaneous runaway of the gate and the drain currents, apparent dependence of the three teminal breakdown voltage on the gate bias resistance in the region dominated by electrical feedback, the rapid increase of the field emitted current at the critical temperature and clear coincidence between the measured and calculated three terminal gate currents both in the thermal feedback dominant region, etc. are demonstrated. The theory explains the experimental results well.

Modular Battery Charge Controller

NASA Technical Reports Server (NTRS)

Button, Robert; Gonzalez, Marcelo

2009-01-01

A new approach to masterless, distributed, digital-charge control for batteries requiring charge control has been developed and implemented. This approach is required in battery chemistries that need cell-level charge control for safety and is characterized by the use of one controller per cell, resulting in redundant sensors for critical components, such as voltage, temperature, and current. The charge controllers in a given battery interact in a masterless fashion for the purpose of cell balancing, charge control, and state-of-charge estimation. This makes the battery system invariably fault-tolerant. The solution to the single-fault failure, due to the use of a single charge controller (CC), was solved by implementing one CC per cell and linking them via an isolated communication bus [e.g., controller area network (CAN)] in a masterless fashion so that the failure of one or more CCs will not impact the remaining functional CCs. Each micro-controller-based CC digitizes the cell voltage (V(sub cell)), two cell temperatures, and the voltage across the switch (V); the latter variable is used in conjunction with V(sub cell) to estimate the bypass current for a given bypass resistor. Furthermore, CC1 digitizes the battery current (I1) and battery voltage (V(sub batt) and CC5 digitizes a second battery current (I2). As a result, redundant readings are taken for temperature, battery current, and battery voltage through the summation of the individual cell voltages given that each CC knows the voltage of the other cells. For the purpose of cell balancing, each CC periodically and independently transmits its cell voltage and stores the received cell voltage of the other cells in an array. The position in the array depends on the identifier (ID) of the transmitting CC. After eight cell voltage receptions, the array is checked to see if one or more cells did not transmit. If one or more transmissions are missing, the missing cell(s) is (are) eliminated from cell-balancing calculations. The cell-balancing algorithm is based on the error between the cell s voltage and the other cells and is categorized into four zones of operation. The algorithm is executed every second and, if cell balancing is activated, the error variable is set to a negative low value. The largest error between the cell and the other cells is found and the zone of operation determined. If the error is zero or negative, then the cell is at the lowest voltage and no balancing action is needed. If the error is less than a predetermined negative value, a Cell Bad Flag is set. If the error is positive, then cell balancing is needed, but a hysteretic zone is added to prevent the bypass circuit from triggering repeatedly near zero error. This approach keeps the cells within a predetermined voltage range.

Treating of solid earthen material and a method for measuring moisture content and resistivity of solid earthen material

DOEpatents

Heath, William; Richardson, Richard; Goheen, Steven

1994-01-01

The present invention includes a method of treating solid earthen material having volatile, semi-volatile and non-volatile contaminants. Six electrodes are inserted into a region of earthen material to be treated in a substantially equilateral hexagonal arrangement. Six phases of voltages are applied to corresponding electrodes. The voltages are adjusted within a first range of voltages to create multiple current paths between pairs of the electrodes. The current paths are evenly distributed throughout the region defined by the electrodes and therefore uniformly heat the region. The region of earthen material is heated to a temperature sufficient to substantially remove volatile and semi-volatile contaminants. This temperature is less than a melting temperature of the earthen material. The voltages are then increased to a second range of voltages effective to create dry regions around the electrodes. The dry regions have a perimeter which define a boundary between the dry regions and the earthen material exterior to the dry regions. Corona discharge occurs at the boundaries of the dry regions. As voltages are increased further, the dry regions move radially outward from the electrodes through the entire region. The corona boundaries decompose the non-volatilized contaminants remaining in the region. The hexagonal arrangement of electrodes is also preferable for measuring resistivity and moisture content of the earthen material. The electric field created between the electrodes is readily discernable and therefore facilitates accurate measurements.

Effect of Embedded Pd Microstructures on the Flat-Band-Voltage Operation of Room Temperature ZnO-Based Liquid Petroleum Gas Sensors

PubMed Central

Ali, Ghusoon M.; Thompson, Cody V.; Jasim, Ali K.; Abdulbaqi, Isam M.; Moore, James C.

2013-01-01

Three methods were used to fabricate ZnO-based room temperature liquid petroleum gas (LPG) sensors having interdigitated metal-semiconductor-metal (MSM) structures. Specifically, devices with Pd Schottky contacts were fabricated with: (1) un-doped ZnO active layers; (2) Pd-doped ZnO active layers; and (3) un-doped ZnO layers on top of Pd microstructure arrays. All ZnO films were grown on p-type Si(111) substrates by the sol-gel method. For devices incorporating a microstructure array, Pd islands were first grown on the substrate by thermal evaporation using a 100 μm mesh shadow mask. We have estimated the sensitivity of the sensors for applied voltage from –5 to 5 V in air ambient, as well as with exposure to LPG in concentrations from 500 to 3,500 ppm at room temperature (300 K). The current-voltage characteristics were studied and parameters such as leakage current, barrier height, reach-through voltage, and flat-band voltage were extracted. We include contributions due to the barrier height dependence on the electric field and tunneling through the barrier for the studied MSM devices. The Pd-enhanced devices demonstrated a maximum gas response at flat-band voltages. The study also revealed that active layers consisting of Pd microstructure embedded ZnO films resulted in devices exhibiting greater gas-response as compared to those using Pd-doped ZnO thin films or un-doped active layers.

Measurement and statistical analysis of single-molecule current-voltage characteristics, transition voltage spectroscopy, and tunneling barrier height.

PubMed

Guo, Shaoyin; Hihath, Joshua; Díez-Pérez, Ismael; Tao, Nongjian

2011-11-30

We report on the measurement and statistical study of thousands of current-voltage characteristics and transition voltage spectra (TVS) of single-molecule junctions with different contact geometries that are rapidly acquired using a new break junction method at room temperature. This capability allows one to obtain current-voltage, conductance voltage, and transition voltage histograms, thus adding a new dimension to the previous conductance histogram analysis at a fixed low-bias voltage for single molecules. This method confirms the low-bias conductance values of alkanedithiols and biphenyldithiol reported in literature. However, at high biases the current shows large nonlinearity and asymmetry, and TVS allows for the determination of a critically important parameter, the tunneling barrier height or energy level alignment between the molecule and the electrodes of single-molecule junctions. The energy level alignment is found to depend on the molecule and also on the contact geometry, revealing the role of contact geometry in both the contact resistance and energy level alignment of a molecular junction. Detailed statistical analysis further reveals that, despite the dependence of the energy level alignment on contact geometry, the variation in single-molecule conductance is primarily due to contact resistance rather than variations in the energy level alignment.

Electronic Current Transducer (ECT) for high voltage dc lines

NASA Astrophysics Data System (ADS)

Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

1980-02-01

The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

Comparative study of I- V methods to extract Au/FePc/p-Si Schottky barrier diode parameters

NASA Astrophysics Data System (ADS)

Oruç, Çiğdem; Altındal, Ahmet

2018-01-01

So far, various methods have been proposed to extract the Schottky diode parameters from measured current-voltage characteristics. In this work, Schottky barrier diode with structure of Au/2(3),9(10),16(17),23(24)-tetra(4-(4-methoxyphenyl)-8-methylcoumarin-7 oxy) phthalocyaninatoiron(II) (FePc)/p-Si was fabricated and current-voltage measurements were carried out on it. In addition, current-voltage measurements were also performed on Au/p-Si structure, without FePc, to clarify the influence of the presence of an interface layer on the device performance. The measured current-voltage characteristics indicate that the interface properties of a Schottky barrier diode can be controlled by the presence of an organic interface layer. It is found that the room temperature barrier height of Au/FePc/p-Si structure is larger than that of the Au/p-Si structure. The obtained forward bias current-voltage characteristics of the Au/FePc/p-Si device was analysed by five different analytical methods. It is found that the extracted values of SBD parameters strongly depends on the method used.

Deposition temperature dependent optical and electrical properties of ALD HfO{sub 2} gate dielectrics pretreated with tetrakisethylmethylamino hafnium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, J.; School of Sciences, Anhui University of Science and Technology, Huainan 232001; He, G., E-mail: hegang@ahu.edu.cn

2015-10-15

Highlights: • ALD-derived HfO{sub 2} gate dielectrics have been deposited on Si substrates. • The leakage current mechanism for different deposition temperature was discussed. • Different emission at different field region has been determined precisely. - Abstract: The effect of deposition temperature on the growth rate, band gap energy and electrical properties of HfO{sub 2} thin film deposited by atomic layer deposition (ALD) has been investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the growth rate and optical constant of ALD-derived HfO{sub 2} gate dielectrics are determined precisely. The deposition temperature dependent electrical properties of HfO{sub 2}more » films were determined by capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements. The leakage current mechanism for different deposition temperature has been discussed systematically. As a result, the optimized deposition temperature has been obtained to achieve HfO{sub 2} thin film with high quality.« less

Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

NASA Astrophysics Data System (ADS)

Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B.

2017-09-01

A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.

Temperature dependence of an AlInP 63Ni betavoltaic cell

NASA Astrophysics Data System (ADS)

Butera, S.; Lioliou, G.; Krysa, A. B.; Barnett, A. M.

2016-10-01

In this paper, the performance of an Al0.52In0.48P 63Ni radioisotope cell is reported over the temperature range of -20 °C to 140 °C. A 400 μm diameter p+-i-n+ (2 μm i-layer) Al0.52In0.48P mesa photodiode was used as a conversion device in a novel betavoltaic cell. Dark current measurements on the Al0.52In0.48P detector showed that the saturation current increased increasing the temperature, while the ideality factor decreased. The effects of the temperature on the key cell parameters were studied in detail showing that the open circuit voltage, the maximum output power, and the internal conversion efficiency decreased when the temperature was increased. At -20 °C, an open circuit voltage and a maximum output power of 0.52 V and 0.28 pW, respectively, were measured.

Coulomb Blockade in a Two-Dimensional Conductive Polymer Monolayer.

PubMed

Akai-Kasaya, M; Okuaki, Y; Nagano, S; Mitani, T; Kuwahara, Y

2015-11-06

Electronic transport was investigated in poly(3-hexylthiophene-2,5-diyl) monolayers. At low temperatures, nonlinear behavior was observed in the current-voltage characteristics, and a nonzero threshold voltage appeared that increased with decreasing temperature. The current-voltage characteristics could be best fitted using a power law. These results suggest that the nonlinear conductivity can be explained using a Coulomb blockade (CB) mechanism. A model is proposed in which an isotropic extended charge state exists, as predicted by quantum calculations, and percolative charge transport occurs within an array of small conductive islands. Using quantitatively evaluated capacitance values for the islands, this model was found to be capable of explaining the observed experimental data. It is, therefore, suggested that percolative charge transport based on the CB effect is a significant factor giving rise to nonlinear conductivity in organic materials.

Cryogenic Evaluation of an Advanced DC/DC Converter Module for Deep Space Applications

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.; Hammoud, Ahmad; Gerber, Scott S.; Patterson, Richard

2003-01-01

DC/DC converters are widely used in power management, conditioning, and control of space power systems. Deep space applications require electronics that withstand cryogenic temperature and meet a stringent radiation tolerance. In this work, the performance of an advanced, radiation-hardened (rad-hard) commercial DC/DC converter module was investigated at cryogenic temperatures. The converter was investigated in terms of its steady state and dynamic operations. The output voltage regulation, efficiency, terminal current ripple characteristics, and output voltage response to load changes were determined in the temperature range of 20 to -140 C. These parameters were obtained at various load levels and at different input voltages. The experimental procedures along with the results obtained on the investigated converter are presented and discussed.

Heat current through an artificial Kondo impurity beyond linear response

NASA Astrophysics Data System (ADS)

Sierra, Miguel A.; Sánchez, David

2018-03-01

We investigate the heat current of a strongly interacting quantum dot in the presence of a voltage bias in the Kondo regime. Using the slave-boson mean-field theory, we discuss the behavior of the energy flow and the Joule heating. We find that both contributions to the heat current display interesting symmetry properties under reversal of the applied dc bias. We show that the symmetries arise from the behavior of the dot transmission function. Importantly, the transmission probability is a function of both energy and voltage. This allows us to analyze the heat current in the nonlinear regime of transport. We observe that nonlinearities appear already for voltages smaller than the Kondo temperature. Finally, we suggest to use the contact and electric symmetry coefficients as a way to measure pure energy currents.

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

Electrical conduction hysteresis in carbon black-filled butyl rubber compounds

NASA Astrophysics Data System (ADS)

Alzamil, M. A.; Alfaramawi, K.; Abboudy, S.; Abulnasr, L.

2018-04-01

Temperature and concentration dependence of electrical resistance of butyl rubber filled with GPF carbon black was carried out. Current-voltage (I-V) characteristics at room-temperature were also investigated. The I-V characteristics show that the behavior is linear at small voltages up to approximately 0.15 V and currents up to 0.05 mA indicating that the conduction mechanism was probably due to electron tunneling from the end of conductive path to the other one under the action of the applied electric field. At higher voltages, a nonlinear behavior was noticed. The nonlinearity was attributed to the joule heating effects. Electrical resistance of the butyl/GPF composites was measured as a function of temperature during heating and cooling cycles from 300 K and upward to a specific temperature. When the specimens were heated up, the resistance was observed to increase continuously with the rise of temperature. However, when the samples were cooled down, the resistance was observed to decrease following a different path. The presence of conduction hysteresis behavior in the resistance-temperature curves during the heating and cooling cycles was then verified. The electrical conduction of the composite system is supposed to follow an activation conduction mechanism. Activation energy was calculated at different filler concentrations for both the heating and cooling processes.

An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

NASA Astrophysics Data System (ADS)

Wang, Hongyue; Wang, Jinyan; Li, Mengjun; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang; Zhou, Yang; Dai, Gang

2018-04-01

In this article, an ohmic-first AlGaN/GaN self-terminating gate-recess etching technique was demonstrated where ohmic contact formation is ahead of gate-recess-etching/gate-dielectric-deposition (GRE/GDD) process. The ohmic contact exhibits few degradations after the self-terminating gate-recess process. Besides, when comparing with that using the conventional fabrication process, the fabricated device using the ohmic-first fabrication process shows a better gate dielectric quality in terms of more than 3 orders lower forward gate leakage current, more than twice higher reverse breakdown voltage as well as better stability. Based on this proposed technique, the normally-off Al2O3/GaN MOSFET exhibits a threshold voltage (V th) of ˜1.8 V, a maximum drain current of ˜328 mA/mm, a forward gate leakage current of ˜10-6 A/mm and an off-state breakdown voltage of 218 V at room temperature. Meanwhile, high temperature characteristics of the device was also evaluated and small variations (˜7.6%) of the threshold voltage was confirmed up to 300 °C.

Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current-voltage and impedance spectroscopy

NASA Astrophysics Data System (ADS)

Rahman Khan, Motiur; Anjaneyulu, P.; Koteswara Rao, K. S. R.; Menon, R.

2017-03-01

We report on the analysis of temperature-dependent current-voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current-voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  1016 cm-3 and 8.6  ×  1015 cm-3) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance-frequency data for various devices can not be explained using the parallel resistance-capacitance (RC) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current-voltage characteristics.

Voltage noise of current-driven vortices in disordered Josephson junction arrays.

PubMed

He, G L; Zhao, Z G; Liu, S; Yang, Y H; Liu, M; Xing, D Y

2006-08-16

Dynamical phenomena of moving vortices and voltage noise spectra are studied in disordered Josephson junction arrays (JJAs). The plastic motion of vortices, smectic flow, and moving Bragg glass phases are separated by two dynamic melting transitions driven by current. From the voltage noise spectra of moving vortices, it is found that the driving current plays an important role in the melting of pinning vortices glass and ordering of moving vortices. The features of noise spectra obtained in the disordered JJA model have been observed recently in the high-temperature superconductor Bi(2)Sr(2)CaCu(2)O(y) near the first-order melting transition, indicating that both of them are related to each other.

A uniform laminar air plasma plume with large volume excited by an alternating current voltage

NASA Astrophysics Data System (ADS)

Li, Xuechen; Bao, Wenting; Chu, Jingdi; Zhang, Panpan; Jia, Pengying

2015-12-01

Using a plasma jet composed of two needle electrodes, a laminar plasma plume with large volume is generated in air through an alternating current voltage excitation. Based on high-speed photography, a train of filaments is observed to propagate periodically away from their birth place along the gas flow. The laminar plume is in fact a temporal superposition of the arched filament train. The filament consists of a negative glow near the real time cathode, a positive column near the real time anode, and a Faraday dark space between them. It has been found that the propagation velocity of the filament increases with increasing the gas flow rate. Furthermore, the filament lifetime tends to follow a normal distribution (Gaussian distribution). The most probable lifetime decreases with increasing the gas flow rate or decreasing the averaged peak voltage. Results also indicate that the real time peak current decreases and the real time peak voltage increases with the propagation of the filament along the gas flow. The voltage-current curve indicates that, in every discharge cycle, the filament evolves from a Townsend discharge to a glow one and then the discharge quenches. Characteristic regions including a negative glow, a Faraday dark space, and a positive column can be discerned from the discharge filament. Furthermore, the plasma parameters such as the electron density, the vibrational temperature and the gas temperature are investigated based on the optical spectrum emitted from the laminar plume.

Fiber-optic sensors for aerospace electrical measurements: An update

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Rose, A. H.; Tang, D.; Day, G. W.

1991-01-01

Fiber-optic sensors are being developed for electrical current, voltage, and power measurements in aerospace applications. These sensors are presently designed to cover ac frequencies from 60 Hz to 20 kHz. The current sensor, based on the Faraday effect in optical fiber, is in advanced development after some initial testing. Concentration is on packaging methods and ways to maintain consistent sensitivity with changes in temperature. The voltage sensor, utilizing the Pockels effect in a crystal, has excelled in temperature tests. This paper reports on the development of these sensors, the results of evaluation, improvements now in progress, and the future direction of the work.

The effects of fabrication temperature on current-voltage characteristics and energy efficiencies of quantum dot sensitized ZnOH-GO hybrid solar cells

NASA Astrophysics Data System (ADS)

Islam, S. M. Z.; Gayen, Taposh; Tint, Naing; Shi, Lingyan; Seredych, Mykola; Bandosz, Teresa J.; Alfano, Robert

2014-11-01

The effects of fabrication temperature are investigated on the performance of CdSe quantum dot (QD)-sensitized hybrid solar cells of the composite material of zinc (hydr)oxide (ZnOH-GO)with 2 wt. % graphite oxide. The current-voltage (I-V) and photo-current measurements show that higher fabrication temperatures yield greater photovoltaic power conversion efficiencies that essentially indicate more efficient solar cells. Two Photon Fluorescence images show the effects of temperature on the internal morphologies of the solar devices based on such materials. The CdSe-QD sensitized ZnOH-GO hybrid solar cells fabricated at 450 °C showing conversion of ˜10.60% under a tungsten lamp (12.1 mW/cm2) are reported here, while using potassium iodide as an electrolyte. The output photocurrent, I (μA) with input power, P (mW/cm2) is found to be superlinear, showing a relation of I = Pn, where n = 1.4.

Field Performance of Photovoltaic Systems in the Tucson Desert

NASA Astrophysics Data System (ADS)

Orsburn, Sean; Brooks, Adria; Cormode, Daniel; Greenberg, James; Hardesty, Garrett; Lonij, Vincent; Salhab, Anas; St. Germaine, Tyler; Torres, Gabe; Cronin, Alexander

2011-10-01

At the Tucson Electric Power (TEP) solar test yard, over 20 different grid-connected photovoltaic (PV) systems are being tested. The goal at the TEP solar test yard is to measure and model real-world performance of PV systems and to benchmark new technologies such as holographic concentrators. By studying voltage and current produced by the PV systems as a function of incident irradiance, and module temperature, we can compare our measurements of field-performance (in a harsh desert environment) to manufacturer specifications (determined under laboratory conditions). In order to measure high-voltage and high-current signals, we designed and built reliable, accurate sensors that can handle extreme desert temperatures. We will present several benchmarks of sensors in a controlled environment, including shunt resistors and Hall-effect current sensors, to determine temperature drift and accuracy. Finally we will present preliminary field measurements of PV performance for several different PV technologies.

Cardiac sodium channel Markov model with temperature dependence and recovery from inactivation.

PubMed Central

Irvine, L A; Jafri, M S; Winslow, R L

1999-01-01

A Markov model of the cardiac sodium channel is presented. The model is similar to the CA1 hippocampal neuron sodium channel model developed by Kuo and Bean (1994. Neuron. 12:819-829) with the following modifications: 1) an additional open state is added; 2) open-inactivated transitions are made voltage-dependent; and 3) channel rate constants are exponential functions of enthalpy, entropy, and voltage and have explicit temperature dependence. Model parameters are determined using a simulated annealing algorithm to minimize the error between model responses and various experimental data sets. The model reproduces a wide range of experimental data including ionic currents, gating currents, tail currents, steady-state inactivation, recovery from inactivation, and open time distributions over a temperature range of 10 degrees C to 25 degrees C. The model also predicts measures of single channel activity such as first latency, probability of a null sweep, and probability of reopening. PMID:10096885

Investigations of 2.9-GHz Resonant Microwave-Sensitive Ag/MgO/Ge/Ag Tunneling Diodes

NASA Astrophysics Data System (ADS)

Qasrawi, A. F.; Khanfar, H. K.

2013-12-01

In this work, a resonant microwave-sensitive tunneling diode has been designed and investigated. The device, which is composed of a magnesium oxide (MgO) layer on an amorphous germanium (Ge) thin film, was characterized by means of temperature-dependent current ( I)-voltage ( V), room-temperature differential resistance ( R)-voltage, and capacitance ( C)-voltage characteristics. The device resonating signal was also tested and evaluated at 2.9 GHz. The I- V curves reflected weak temperature dependence and a wide tunneling region with peak-to-valley current ratio of ˜1.1. The negative differential resistance region shifts toward lower biasing voltages as temperature increases. The true operational limit of the device was determined as 350 K. A novel response of the measured R- V and C- V to the incident alternating-current (ac) signal was observed at 300 K. Particularly, the response to a 100-MHz signal power ranging from the standard Bluetooth limit to the maximum output power of third-generation mobile phones reflects a wide range of tunability with discrete switching property at particular power limits. In addition, when the tunnel device was implanted as an amplifier for a 2.90-GHz resonating signal of the power of wireless local-area network (LAN) levels, signal gain of 80% with signal quality factor of 4.6 × 104 was registered. These remarkable properties make devices based on MgO-Ge interfaces suitable as electronic circuit elements for microwave applications, bias- and time-dependent electronic switches, and central processing unit (CPU) clocks.

A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature.

PubMed

Liu, Guanxiong; Debnath, Bishwajit; Pope, Timothy R; Salguero, Tina T; Lake, Roger K; Balandin, Alexander A

2016-10-01

The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, including 1T-TaSe 2 , 1T-TaS 2 and 1T-TiSe 2 exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by the environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here, we demonstrate room-temperature current switching driven by a voltage-controlled phase transition between CDW states in films of 1T-TaS 2 less than 10 nm thick. We exploit the transition between the nearly commensurate and the incommensurate CDW phases, which has a transition temperature of 350 K and gives an abrupt change in current accompanied by hysteresis. An integrated graphene transistor provides a voltage-tunable, matched, low-resistance load enabling precise voltage control of the circuit. The 1T-TaS 2 film is capped with hexagonal boron nitride to provide protection from oxidation. The integration of these three disparate 2D materials in a way that exploits the unique properties of each yields a simple, miniaturized, voltage-controlled oscillator suitable for a variety of practical applications.

Voltage Gating of Shaker K+ Channels

PubMed Central

Rodríguez, Beatriz M.; Sigg, Daniel; Bezanilla, Francisco

1998-01-01

Ionic (Ii) and gating currents (Ig) from noninactivating Shaker H4 K+ channels were recorded with the cut-open oocyte voltage clamp and macropatch techniques. Steady state and kinetic properties were studied in the temperature range 2–22°C. The time course of Ii elicited by large depolarizations consists of an initial delay followed by an exponential rise with two kinetic components. The main Ii component is highly temperature dependent (Q10 > 4) and mildly voltage dependent, having a valence times the fraction of electric field (z) of 0.2–0.3 eo. The Ig On response obtained between −60 and 20 mV consists of a rising phase followed by a decay with fast and slow kinetic components. The main Ig component of decay is highly temperature dependent (Q10 > 4) and has a z between 1.6 and 2.8 eo in the voltage range from −60 to −10 mV, and ∼0.45 eo at more depolarized potentials. After a pulse to 0 mV, a variable recovery period at −50 mV reactivates the gating charge with a high temperature dependence (Q10 > 4). In contrast, the reactivation occurring between −90 and −50 mV has a Q10 = 1.2. Fluctuation analysis of ionic currents reveals that the open probability decreases 20% between 18 and 8°C and the unitary conductance has a low temperature dependence with a Q10 of 1.44. Plots of conductance and gating charge displacement are displaced to the left along the voltage axis when the temperature is decreased. The temperature data suggests that activation consists of a series of early steps with low enthalpic and negative entropic changes, followed by at least one step with high enthalpic and positive entropic changes, leading to final transition to the open state, which has a negative entropic change. PMID:9689029

Field test of thermoelectric generator using parabolic trough solar concentrator for power generation

NASA Astrophysics Data System (ADS)

Viña, Rommel R.; Alagao, Feliciano B.

2018-03-01

A 2.4587 square meter effective area cylindrical parabolic solar concentrator was fabricated. The trough concentrator is a 4-ft by 8-ft metal sheet with solar mirror film adhered on it and it is laid on a frame with steel tubes bent in a shape of a parabola. On the focal region of the parabolic trough is the 1.22-m by 0.10-m absorber plate made of copper and coated flat black. This plate served as high temperature reservoir of the eight equally spaced TEC1-12710T125 thermoelectric modules. On the cold side of the modules is a 2.5-in. by 1-in. rectangular aluminum tube with coolant flowing inside. The coolant loop included a direct contact cooling tower which maintained the module cold side assembly inlet temperature of about 28°C. Collector temperature was also kept below the 125°C module maximum operating temperature by controlling the effective area. This was accomplished by adjusting the reflector covering. Using a dummy load and with 8 modules in series, tests results indicated current readings up to 179.4 mA with a voltage of 10.6 VDC and 27% of reflector area or voltage reading up to 12.7 VDC with a current of 165 mA. A steady voltage of 12 VDC was achieved with the use of a voltage regulator. A voltage above 12 VDC will be required to charge a storage battery. Overall results showed the potential of thermoelectric generator (TEG) in combination with solar energy in power generation.

Power Generation from a Radiative Thermal Source Using a Large-Area Infrared Rectenna

NASA Astrophysics Data System (ADS)

Shank, Joshua; Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew; Howell, Stephen; Peters, David W.; Davids, Paul S.

2018-05-01

Electrical power generation from a moderate-temperature thermal source by means of direct conversion of infrared radiation is important and highly desirable for energy harvesting from waste heat and micropower applications. Here, we demonstrate direct rectified power generation from an unbiased large-area nanoantenna-coupled tunnel diode rectifier called a rectenna. Using a vacuum radiometric measurement technique with irradiation from a temperature-stabilized thermal source, a generated power density of 8 nW /cm2 is observed at a source temperature of 450 °C for the unbiased rectenna across an optimized load resistance. The optimized load resistance for the peak power generation for each temperature coincides with the tunnel diode resistance at zero bias and corresponds to the impedance matching condition for a rectifying antenna. Current-voltage measurements of a thermally illuminated large-area rectenna show current zero crossing shifts into the second quadrant indicating rectification. Photon-assisted tunneling in the unbiased rectenna is modeled as the mechanism for the large short-circuit photocurrents observed where the photon energy serves as an effective bias across the tunnel junction. The measured current and voltage across the load resistor as a function of the thermal source temperature represents direct current electrical power generation.

Positive Voltage Hazard to EMU Crewman from Currents through Plasma

NASA Technical Reports Server (NTRS)

Koontz, Steven L.; Kramer, Leonard; Hamilton, Doug; Mikatarian, Ronald

2010-01-01

This paper describes the model of the EMU with a human body in the circuit that has been used by NASA to evaluate the low positive voltage hazard. The model utilizes the electron collection characterization from on orbit Langmuir probe data as representative of electron collection to a positive charged surface with a wide range of on orbit plasma temperature and density conditions. The data has been unified according to non-linear theoretical temperature and density variation of the electron saturated probe current collection theory and used as a model for the electron collection at EMU surfaces. Vulnerable paths through the EMU connecting through the crewman s body have been identified along with electrical impedance of the exposed body parts. The body impedance information is merged with the electron collection characteristics in circuit simulation software (SPICE). The assessment shows that currents can be on the order of 20 mA for a 15 V exposure and of order 4 mA at 3V. These currents formally violate NASA protocol for electric current exposures however the human factors associated with subjective consequences of noxious stimuli from low voltage exposure during the stressful conditions of EVA are an area of active inquiry.

Study on Self-start up of Polymer Electrolyte Fuel Cell Stack at Subzero Temperature

NASA Astrophysics Data System (ADS)

Shirato, Hiroyasu; Hoshina, Hideo; Yamakoshi, Yukiyasu; Tomita, Kazuhiko; Oka, Yoshiaki

This paper aims to boot up polymer electrolyte fuel cells at subzero temperature without energy from outside and compass the conditions. Visualization tests of water drainage and voltage-current density characteristics provided the selection of a serpentine type as a channel of a fuel cell separator for cold region. The successful start-up of the cell at subzero temperature requires suitable current densities corresponding to the ambient temperature since the lower the temperature is, the lower the cell voltage soon after the start-up is. Suitable amount of exhausted energy is also necessary for the successful self start-up. Humidification using potassium acetate 30 mass% solution provides increased impedance of the cell and inhibits the water freezing owing to its dispersal to the electrode compared to no humidification. A stack laminated 25 sheets of the serpentine type separators enables stabilized power generation at normal temperature. The stack is also bootable with no energy from outside at 263K.

Performance of Li-Ion Cells Under Battery Voltage Charge Control

NASA Technical Reports Server (NTRS)

Rao, Gopalakrishna M.; Vaidyanathan, Hari; Day, John H. (Technical Monitor)

2001-01-01

A study consisting of electrochemical characterization and Low-Earth-Orbit (LEO) cycling of Li-Ion cells from three vendors was initiated in 1999 to determine the cycling performance and to infuse the new technology in the future NASA missions. The 8-cell batteries included in this evaluation are prismatic cells manufactured by Mine Safety Appliances Company (MSA), cylindrical cells manufactured by SAFT and prismatic cells manufactured by Yardney Technical Products, Inc. (YTP). The three batteries were cycle tested in the LEO regime at 40% depth of discharge, and under a charge control technique that consists of battery voltage clamp with a current taper. The initial testing was conducted at 20 C; however, the batteries were cycled also intermittently at low temperatures. YTP 20 Ah cells consisted of mixed-oxide (Co and Ni) positive, graphitic carbon negative, LIPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 32 V. The low temperature cycling tests started after 4575 cycles at 20 C. The cells were not capable of cycling. at low temperature since the charge acceptance at battery level was poor. There was a cell in the battery that showed too high an end-of-charge (EOC) voltage thereby limiting the ability to charge the rest of the cells in the battery. The battery has completed 6714 cycles. SAFT 12 Ah cells consisted of mixed-oxide (Co and NO positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was for 30.8 V. The low temperature cycling tests started after 4594 cycles at 20 C. A cell that showed low end of discharge (EOD) and EOC voltages and three other cells that showed higher EOC voltages limited the charge acceptance at the selected voltage limit during charge. The cells were capable of cycling at 10 C and 0 C but the charge voltage limit had to be increased to 34.3 V (4.3 V per cell). The low temperature cycling may have induced poor chargeability since the voltage had to be increased to achieve the required charge input. The battery has completed 6226 cycles. MSA 10 Ah cells consisted of Co oxide positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 30.8 V. The low temperature cycling tests were started after 2182 cycles at 20 C. The cells were capable of cycling at 10 C and 0 C. Like SAFT, the voltage limit on charge had to be increased to 36 V (4.5 V per cell). There was a cell (cell S/N 13) in the battery that showed poor performance features such as low EOD voltage and high EOC voltage. The battery has completed 3441 cycles. A reconditioning procedure that consisted of C15 charge to a taper current of C/100 and C/20 discharge improved the voltage behavior of SAFT and MSA cells with no significant effect on YTP cells. We have demonstrated that the charge operation with VT clamp at battery rather than at cell level is feasible for onboard Li-Ion battery operation.

Three-dimensional scanning force/tunneling spectroscopy at room temperature.

PubMed

Sugimoto, Yoshiaki; Ueda, Keiichi; Abe, Masayuki; Morita, Seizo

2012-02-29

We simultaneously measured the force and tunneling current in three-dimensional (3D) space on the Si(111)-(7 × 7) surface using scanning force/tunneling microscopy at room temperature. The observables, the frequency shift and the time-averaged tunneling current were converted to the physical quantities of interest, i.e. the interaction force and the instantaneous tunneling current. Using the same tip, the local density of states (LDOS) was mapped on the same surface area at constant height by measuring the time-averaged tunneling current as a function of the bias voltage at every lateral position. LDOS images at negative sample voltages indicate that the tip apex is covered with Si atoms, which is consistent with the Si-Si covalent bonding mechanism for AFM imaging. A measurement technique for 3D force/current mapping and LDOS imaging on the equivalent surface area using the same tip was thus demonstrated.

A modified low-temperature wafer bonding method using spot pressing bonding technique and water glass adhesive layer

NASA Astrophysics Data System (ADS)

Xu, Yang; Wang, Shengkai; Wang, Yinghui; Chen, Dapeng

2018-02-01

A modified low-temperature wafer bonding method using a spot pressing bonding technique and a water glass adhesive layer is proposed. The electrical properties of the water glass layer has been studied by capacitance-voltage (C-V) and electric current-voltage (I-V) measurements. It is found that the adhesive layer can be regarded as a good insulator in terms of leakage current density. The bonding mechanism and the motion of bubbles during the thermal treatment are investigated. The dominant factor for the bubble motion in the modified bonding process is the gradient of pressure introduced by the spot pressing force. It is proved that the modified method achieves low-temperature adhesive bonding, minimizes the effect of water desorption, and provides good bonding performance.

Modeling of a 5-cell direct methanol fuel cell using adaptive-network-based fuzzy inference systems

NASA Astrophysics Data System (ADS)

Wang, Rongrong; Qi, Liang; Xie, Xiaofeng; Ding, Qingqing; Li, Chunwen; Ma, ChenChi M.

The methanol concentrations, temperature and current were considered as inputs, the cell voltage was taken as output, and the performance of a direct methanol fuel cell (DMFC) was modeled by adaptive-network-based fuzzy inference systems (ANFIS). The artificial neural network (ANN) and polynomial-based models were selected to be compared with the ANFIS in respect of quality and accuracy. Based on the ANFIS model obtained, the characteristics of the DMFC were studied. The results show that temperature and methanol concentration greatly affect the performance of the DMFC. Within a restricted current range, the methanol concentration does not greatly affect the stack voltage. In order to obtain higher fuel utilization efficiency, the methanol concentrations and temperatures should be adjusted according to the load on the system.

NEXIS Reservoir Cathode 2000 Hour Life Test

NASA Technical Reports Server (NTRS)

Vaughn, Jason; Schneider, Todd; Polk, Jay; Goebel, Dan; Ohlinger, Wayne; Hill, D. Norm

2004-01-01

The current design of the Nuclear Electric Xenon Ion System (NEXIS) employs a reservoir cathode as both the discharge and neutralizer cathode to meet the 10 yr thruster design life. The main difference between a reservoir cathode and a conventional discharge cathode is the source material (barium-containing compound) is contained within a reservoir instead of in an impregnated insert in the hollow tube. However, reservoir cathodes do not have much life test history associated with them. In order to demonstrate the feasibility of using a reservoir cathode as an integral part of the NEXIS ion thruster, a 2000 hr life test was performed. Several proof-of-concept (POC) reservoir cathodes were built early in the NEXIS program to conduct performance testing as well as life tests. One of the POC cathodes was sent to Marshall Space Flight Center (MSFC) where it was tested for 2000 hrs in a vacuum chamber. The cathode was operated at the NEXIS design point of 25 A discharge current and a xenon flow rate of 5.5 sccm during the 2000 hr test. The cathode performance parameters, including discharge current, discharge voltage, keeper current; keeper voltage, and flow rate were monitored throughout test. Also, the temperature upstream of cathode heater, the temperature downstream of the cathode heater, and the temperature of the orifice plate were monitored throughout the life of the test. The results of the 2000 hr test will be described in this paper. Included in the results will be time history of discharge current, discharge voltage, and flow rate. Also, a time history of the cathode temperature will be provided.

Unraveling the temperature and voltage dependence of magnetic field effects in organic semiconductors

NASA Astrophysics Data System (ADS)

Janssen, Paul; Wouters, Steinar H. W.; Cox, Matthijs; Koopmans, Bert

2013-11-01

In recent years, it was discovered that the current through an organic semiconductor, sandwiched between two non-magnetic electrodes, can be changed significantly by applying a small magnetic field. This surprisingly large magnetoresistance effect, often dubbed as organic magnetoresistance (OMAR), has puzzled the young field of organic spintronics during the last decade. Here, we present a detailed study on the voltage and temperature dependence of OMAR, aiming to unravel the lineshapes of the magnetic field effects and thereby gain a deeper fundamental understanding of the underlying microscopic mechanism. Using a full quantitative analysis of the lineshapes, we are able to extract all linewidth parameters and the voltage and temperature dependencies are explained with a recently proposed trion mechanism. Moreover, explicit microscopic simulations show a qualitative agreement to the experimental results.

Critical current and electric transport properties of superconducting epitaxial Nb(Ti)N submicron structures

NASA Astrophysics Data System (ADS)

Klimov, A.; Słysz, W.; Guziewicz, M.; Kolkovsky, V.; Wegrzecki, M.; Bar, J.; Marchewka, M.; Seredyński, B.

2016-12-01

Critical current and current-voltage characteristics of epitaxial Nb(Ti)N submicron ultrathin structures were measured as function of temperature. For 700-nm-wide bridge we found current-driven vortex de-pinning at low temperatures and thermally activated flux flow closer to the transition temperature, as the limiting factors for the critical current density. For 100-nm-wide meander we observed combination of phase-slip activation and vortex-anti-vortex pair (VAP) thermal excitation. Our Nb(Ti)N meander structure demonstrates high de-pairing critical current densities 107 A/cm2 at low temperatures, but the critical currents are much smaller due to presence of the local constrictions.

Temperature and current coefficients of lasing wavelength in tunable diode laser spectroscopy.

PubMed

Fukuda, M; Mishima, T; Nakayama, N; Masuda, T

2010-08-01

The factors determining temperature and current coefficients of lasing wavelength are investigated and discussed under monitoring CO(2)-gas absorption spectra. The diffusion rate of Joule heating at the active layer to the surrounding region is observed by monitoring the change in the junction voltage, which is a function of temperature and the wavelength (frequency) deviation under sinusoidal current modulation. Based on the experimental results, the time interval of monitoring the wavelength after changing the ambient temperature or injected current (scanning rate) has to be constant at least to eliminate the monitoring error induced by the deviation of lasing wavelength, though the temperature and current coefficients of lasing wavelength differ with the rate.

An experimental study on the thermal characteristics and heating effect of arc-fault from Cu core in residential electrical wiring fires

PubMed Central

Du, Jian-Hua; Zeng, Yi; Pan, Leng; Zhang, Ren-Cheng

2017-01-01

The characteristics of a series direct current (DC) arc-fault including both electrical and thermal parameters were investigated based on an arc-fault simulator to provide references for multi-parameter electrical fire detection method. Tests on arc fault behavior with three different initial circuit voltages, resistances and arc gaps were conducted, respectively. The influences of circuit conditions on arc dynamic image, voltage, current or power were interpreted. Also, the temperature rises of electrode surface and ambient air were studied. The results showed that, first, significant variations of arc structure and light emitting were observed under different conditions. A thin outer burning layer of vapor generated from electrodes with orange light was found due to the extremely high arc temperature. Second, with the increasing electrode gap in discharging, the arc power was shown to have a non monotonic relationship with arc length for constant initial circuit voltage and resistance. Finally, the temperature rises of electrode surface caused by heat transfer from arc were found to be not sensitive with increasing arc length due to special heat transfer mechanism. In addition, temperature of ambient air showed a large gradient in radial direction of arc. PMID:28797055

An experimental study on the thermal characteristics and heating effect of arc-fault from Cu core in residential electrical wiring fires.

PubMed

Du, Jian-Hua; Tu, Ran; Zeng, Yi; Pan, Leng; Zhang, Ren-Cheng

2017-01-01

The characteristics of a series direct current (DC) arc-fault including both electrical and thermal parameters were investigated based on an arc-fault simulator to provide references for multi-parameter electrical fire detection method. Tests on arc fault behavior with three different initial circuit voltages, resistances and arc gaps were conducted, respectively. The influences of circuit conditions on arc dynamic image, voltage, current or power were interpreted. Also, the temperature rises of electrode surface and ambient air were studied. The results showed that, first, significant variations of arc structure and light emitting were observed under different conditions. A thin outer burning layer of vapor generated from electrodes with orange light was found due to the extremely high arc temperature. Second, with the increasing electrode gap in discharging, the arc power was shown to have a non monotonic relationship with arc length for constant initial circuit voltage and resistance. Finally, the temperature rises of electrode surface caused by heat transfer from arc were found to be not sensitive with increasing arc length due to special heat transfer mechanism. In addition, temperature of ambient air showed a large gradient in radial direction of arc.

Lithium thionyl chloride high rate discharge

NASA Technical Reports Server (NTRS)

Klinedinst, K. A.

1980-01-01

Improvements in high rate lithium thionyl chloride power technology achieved by varying the electrolyte composition, operating temperature, cathode design, and cathode composition are discussed. Discharge capacities are plotted as a function of current density, cell voltage, and temperature.

Solar Array at Very High Temperatures: Ground Tests

NASA Technical Reports Server (NTRS)

Vayner, Boris

2016-01-01

Solar array design for any spacecraft is determined by the orbit parameters. For example, operational voltage for spacecraft in Low Earth Orbit (LEO) is limited by significant differential charging due to interactions with low temperature plasma. In order to avoid arcing in LEO, solar array is designed to generate electrical power at comparatively low voltages (below 100 V) or to operate at higher voltages with encapsulated of all suspected discharge locations. In Geosynchronous Orbit (GEO) differential charging is caused by energetic electrons that produce differential potential between coverglass and conductive spacecraft body in a kilovolt range. In such a case, weakly conductive layer over coverglass (ITO) is one of possible measures to eliminate dangerous discharges on array surface. Temperature variations for solar arrays in both orbits are measured and documented within the range of -150 C +110 C. This wide interval of operational temperatures is regularly reproduced in ground tests with radiative heating and cooling inside shroud with flowing liquid nitrogen. The requirements to solar array design and tests turn out to be more complicated when planned trajectory crosses these two orbits and goes closer to Sun. Conductive layer over coverglass causes sharp increase in parasitic current collected from LEO plasma, high temperature may cause cracks in encapsulating material (RTV), radiative heating of coupon in vacuum chamber becomes practically impossible above 150 C, conductivities of glass and adhesive go up with temperature that decrease array efficiency, and mechanical stresses grow up to critical magnitudes. A few test arrangements and respective results are presented in current paper. Coupons were tested against arcing in simulated LEO and GEO environments under elevated temperatures up to 200 C. The dependence of leakage current on temperature was measured, and electrostatic cleanness was verified for coupons with antireflection (AR) coating over ITO layer.

Superconducting FCL using a combined inducted magnetic field trigger and shunt coil

DOEpatents

Tekletsadik, Kasegn D.

2007-10-16

A single trigger/shunt coil is utilized for combined induced magnetic field triggering and shunt impedance. The single coil connected in parallel with the high temperature superconducting element, is designed to generate a circulating current in the parallel circuit during normal operation to aid triggering the high temperature superconducting element to quench in the event of a fault. The circulating current is generated by an induced voltage in the coil, when the system current flows through the high temperature superconducting element.

Evaluation of 10V Chip Polymer Tantalum Capacitors for Space Applications

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2016-01-01

Due to low ESR and safe failure mode, new technology chip polymer tantalum capacitors (CPTC) have gained popularity in the electronics design community, first in commercial applications, and now in hi-rel and space systems. The major drawbacks of these parts are high leakage currents, degradation under environmental stresses, and a relatively narrow temperature range of operating and storage conditions. Several studies have shown that a certain amount of moisture in polymer cathodes is necessary for a normal operation of the parts. This might limit applications of CPTCs in space systems and requires analysis of long-term exposure to deep vacuum conditions on their performance and reliability. High leakage currents and limited maximum operational temperature complicate accelerated testing that is necessary to assess long-term reliability and require new screening and qualification procedures for quality assurance. A better understanding of behavior of CPTCs as compared to traditional, MnO2, capacitors is necessary to develop adequate approaches for QA system for space applications. A specific of CPTCs is that different materials and processes might be used for low-voltage (10 V and less) and high-voltage (above 10 V) capacitors, so performance and degradation processes in these groups require separate analysis. In this work, that is a part of the NASA Electronic Parts and Packaging (NEPP) program, degradation of AC and DC characteristics under environmental stresses at different temperatures and voltages have been studied in nine lots of commercial and automotive grade capacitors rated to 10 V. Results of analysis of leakage currents, high temperature storage (HTS) up to 5000 hrs in vacuum and air at different temperatures, and Highly Accelerated Life Testing (HALT) in the range from 85 C to 145 C are presented. Temperature and voltage acceleration factors were calculated based on approximation of distributions of degradation rates with a general log-linear Weibull model. Mechanisms of degradation and failures, and requirements for screening and qualification testing are discussed.

Enhancing the nonlinear thermoelectric response of a correlated quantum dot in the Kondo regime by asymmetrical coupling to the leads

NASA Astrophysics Data System (ADS)

Pérez Daroca, Diego; Roura-Bas, Pablo; Aligia, Armando A.

2018-04-01

We study the low-temperature properties of the differential response of the current to a temperature gradient at finite voltage in a single-level quantum dot including electron-electron interaction, nonsymmetric couplings to the leads, and nonlinear effects. The calculated response is significantly enhanced in setups with large asymmetries between the tunnel couplings. In the investigated range of voltages and temperatures with corresponding energies up to several times the Kondo energy scale, the maximum response is enhanced nearly an order of magnitude with respect to symmetric coupling to the leads.

Study of voltage decrease in organic light emitting diodes during the initial stage of lifetime

NASA Astrophysics Data System (ADS)

Cusumano, P.

2016-02-01

We report the results of lifetime DC testing at constant current of not-encapsulated organic light emitting diodes (OLEDs) based on Tris (8 idroxyquinoline) aluminum (Alq3) as emitting material. In particular, a voltage decrease during the initial stage of the lifetime test is observed. The cause of this behavior is also discussed, mainly linked to initial Joule self-heating of the device, rising its temperature above room temperature until thermal equilibrium is reached at steady state.

Nonlinear current-voltage characteristics based on semiconductor nanowire networks enable a new concept in thermoelectric device optimization

NASA Astrophysics Data System (ADS)

Diaz Leon, Juan J.; Norris, Kate J.; Hartnett, Ryan J.; Garrett, Matthew P.; Tompa, Gary S.; Kobayashi, Nobuhiko P.

2016-08-01

Thermoelectric (TE) devices that produce electric power from heat are driven by a temperature gradient (Δ T = T_{{hot}} - T_{{cold}}, T hot: hot side temperature, T cold: cold side temperature) with respect to the average temperature ( T). While the resistance of TE devices changes as Δ T and/or T change, the current-voltage ( I- V) characteristics have consistently been shown to remain linear, which clips generated electric power ( P gen) within the given open-circuit voltage ( V OC) and short-circuit current ( I SC). This P gen clipping is altered when an appropriate nonlinearity is introduced to the I- V characteristics—increasing P gen. By analogy, photovoltaic cells with a large fill factor exhibit nonlinear I- V characteristics. In this paper, the concept of a unique TE device with nonlinear I- V characteristics is proposed and experimentally demonstrated. A single TE device with nonlinear I- V characteristics is fabricated by combining indium phosphide (InP) and silicon (Si) semiconductor nanowire networks. These TE devices show P gen that is more than 25 times larger than those of comparable devices with linear I- V characteristics. The plausible causes of the nonlinear I- V characteristics are discussed. The demonstrated concept suggests that there exists a new pathway to increase P gen of TE devices made of semiconductors.

User handbook for block IV silicon solar cell modules

NASA Technical Reports Server (NTRS)

Smokler, M. I.

1982-01-01

The essential electrical and mechanical characteristics of block 4 photovoltaic solar cell modules are described. Such module characteristics as power output, nominal operating voltage, current-voltage characteristics, nominal operating cell temperature, and dimensions are tabulated. The limits of the environmental and other stress tests to which the modules are subjected are briefly described.

Production of atmospheric-pressure glow discharge in nitrogen using needle-array electrode

NASA Astrophysics Data System (ADS)

Takaki, K.; Hosokawa, M.; Sasaki, T.; Mukaigawa, S.; Fujiwara, T.

2005-04-01

An atmospheric pressure glow discharge was generated using a needle-array electrode in nitrogen, and the voltage-current characteristics of the glow discharge were obtained in a range from 1 mA to 60 A. A pulsed high voltage with short rise time under 10 ns was employed to generate streamer discharges simultaneously at all needle tips. The large number of streamer discharges prevented the glow-to-arc transition caused by inhomogeneous thermalization. Semiconductor opening switch diodes were employed as an opening switch to shorten the rise time. The glow voltage was almost constant until the discharge current became 0.3 A, whereas the voltage increased with the current higher than 0.3 A. Electron density and temperature in a positive column of the glow discharge at 60 A were obtained to 1.4×1012cm-3 and 1.3 eV from calculation based on nitrogen swarm data.

Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Fossum, Eric R.; Baier, Steven M.

1992-01-01

Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K are presented. It is shown that the CHFET exhibits normal transistor operation down to 6 K. Some of the details of the transistor operation, such as the gate-voltage dependence of the channel potential, are analyzed. The gate current is examined and is shown to be due to several mechanisms acting in parallel. These include field-emission and thermionic-field-emission, conduction through a temperature-activated resistance, and thermionic emission. The input referred noise for n-channel CHFETs is presented and discussed. The noise has the spectral dependence of 1/f noise, but does not exhibit the usual area dependence.

Behavior of Triple Langmuir Probes in Non-Equilibrium Plasmas

NASA Technical Reports Server (NTRS)

Polzin, Kurt A.; Ratcliffe, Alicia C.

2018-01-01

The triple Langmuir probe is an electrostatic probe in which three probe tips collect current when inserted into a plasma. The triple probe differs from a simple single Langmuir probe in the nature of the voltage applied to the probe tips. In the single probe, a swept voltage is applied to the probe tip to acquire a waveform showing the collected current as a function of applied voltage (I-V curve). In a triple probe three probe tips are electrically coupled to each other with constant voltages applied between each of the tips. The voltages are selected such that they would represent three points on the single Langmuir probe I-V curve. Elimination of the voltage sweep makes it possible to measure time-varying plasma properties in transient plasmas. Under the assumption of a Maxwellian plasma, one can determine the time-varying plasma temperature T(sub e)(t) and number density n(sub e)(t) from the applied voltage levels and the time-histories of the collected currents. In the present paper we examine the theory of triple probe operation, specifically focusing on the assumption of a Maxwellian plasma. Triple probe measurements have been widely employed for a number of pulsed and timevarying plasmas, including pulsed plasma thrusters (PPTs), dense plasma focus devices, plasma flows, and fusion experiments. While the equilibrium assumption may be justified for some applications, it is unlikely that it is fully justifiable for all pulsed and time-varying plasmas or for all times during the pulse of a plasma device. To examine a simple non-equilibrium plasma case, we return to basic governing equations of probe current collection and compute the current to the probes for a distribution function consisting of two Maxwellian distributions with different temperatures (the two-temperature Maxwellian). A variation of this method is also employed, where one of the Maxwellians is offset from zero (in velocity space) to add a suprathermal beam of electrons to the tail of the main Maxwellian distribution (the bump-on-the-tail distribution function). For a range of parameters in these non-Maxwellian distributions, we compute the current collection to the probes. We compare the distribution function that was assumed a priori with the distribution function one would infer when applying standard triple probe theory to analyze the collected currents. For the assumed class of non-Maxwellian distribution functions this serves to illustrate the effect a non-Maxwellian plasma would have on results interpreted using the equilibrium triple probe current collection theory, allowing us to state the magnitudes of these deviations as a function of the assumed distribution function properties.

Sodium efflux from voltage clamped squid giant axons.

PubMed Central

Landowne, D

1977-01-01

1. The efflux of radioactive sodium was measured from squid axons during simultaneous voltage clamp experiments such that it was possible to determine the efflux of sodium associated with a measured voltage clamp current. 2. The extra efflux of sodium associated with voltage clamp pulses increased linearly with the magnitude of the depolarization above 40 mV. A 100 mV pulse of sufficient duration to produce all of the sodium current increased the rate constant of efflux by about 10(-6). 3. Application of 100 nM tetrodotoxin eliminated the sodium current and the extra efflux of radioactive sodium. 4. Cooling the axon increased the extra efflux/voltage clamp pulse slightly with a Q10 of 1/1-1. On the same axons cooling increased the integral of the sodium current with a Q10 of 1/1-4. 5. Replacing external sodium with Tris, dextrose or Mg-mannitol reduced the extra efflux of sodium by about 50%. The inward sodium current was replaced with an outward current as expected. 6. Replacing external sodium with lithium also reduced the extra efflux by about 50% but the currents seen in lithium were slightly larger than those in sodium. 7. The effect of replacing external sodium was not voltage dependent. Cooling reduced the effect so that there was less reduction of efflux on switching to Tris ASW in the cold than in the warm. 8. The extra efflux of sodium into sodium-free ASW is approximately the same as the integral of the sodium current. Adding external sodium produces a deviation from the independence principle such that there is more exchange of sodium than predicted. Such a deviation from prediction was noted by Hodgkin & Huxley (1952c). 9. Using the equations of Hodgkin & Huxley (1952c) modified to include the deviation from independence reported in this paper and its temperature dependence, one can predict the temperature dependence of the sodium efflux associated with action potentials and obtain much better agreement than is possibly without these phenomena. 10. This deviation from independence in the sodium fluxes is the type expected from some kind of mixing and binding of sodium within the membrane phase. PMID:856999

Control of plasma properties in a short direct-current glow discharge with active boundaries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adams, S. F.; Demidov, V. I., E-mail: vladimir.demidov@mail.wvu.edu; West Virginia University, Morgantown, West Virginia 26506

2016-02-15

To demonstrate controlling electron/metastable density ratio and electron temperature by applying negative voltages to the active (conducting) discharge wall in a low-pressure plasma with nonlocal electron energy distribution function, modeling has been performed in a short (lacking the positive-column region) direct-current glow discharge with a cold cathode. The applied negative voltage can modify the trapping of the low-energy part of the energetic electrons that are emitted from the cathode sheath and that arise from the atomic and molecular processes in the plasma within the device volume. These electrons are responsible for heating the slow, thermal electrons, while production of slowmore » electrons (ions) and metastable atoms is mostly due to the energetic electrons with higher energies. Increasing electron temperature results in increasing decay rate of slow, thermal electrons (ions), while decay rate of metastable atoms and production rates of slow electrons (ions) and metastable atoms practically are unchanged. The result is in the variation of electron/metastable density ratio and electron temperature with the variation of the wall negative voltage.« less

Degradation of Leakage Currents and Reliability Prediction for Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2016-01-01

Two types of failures in solid tantalum capacitors, catastrophic and parametric, and their mechanisms are described. Analysis of voltage and temperature reliability acceleration factors reported in literature shows a wide spread of results and requires more investigation. In this work, leakage currents in two types of chip tantalum capacitors were monitored during highly accelerated life testing (HALT) at different temperatures and voltages. Distributions of degradation rates were approximated using a general log-linear Weibull model and yielded voltage acceleration constants B = 9.8 +/- 0.5 and 5.5. The activation energies were Ea = 1.65 eV and 1.42 eV. The model allows for conservative estimations of times to failure and was validated by long-term life test data. Parametric degradation and failures are reversible and can be annealed at high temperatures. The process is attributed to migration of charged oxygen vacancies that reduce the barrier height at the MnO2/Ta2O5 interface and increase injection of electrons from the MnO2 cathode. Analysis showed that the activation energy of the vacancies' migration is 1.1 eV.

Analysis of Schottky Barrier Parameters and Current Transport Properties of V/p-Type GaN Schottky Junction at Low Temperatures

NASA Astrophysics Data System (ADS)

Asha, B.; Harsha, Cirandur Sri; Padma, R.; Rajagopal Reddy, V.

2018-05-01

The electrical characteristics of a V/p-GaN Schottky junction have been investigated by current-voltage (I-V) and capacitance-voltage (C-V) characteristics under the assumption of the thermionic emission (TE) theory in the temperature range of 120-280 K with steps of 40 K. The zero-bias barrier height (ΦB0), ideality factor (n), flat-band barrier height (ΦBF) and series resistance (R S) values were evaluated and were found to be strongly temperature dependent. The results revealed that the ΦB0 values increase, whereas n, ΦFB and R S values decrease, with increasing temperature. Using the conventional Richardson plot, the mean barrier height (0.39 eV) and Richardson constant (8.10 × 10-10 Acm-2 K-2) were attained. The barrier height inhomogeneities were demonstrated by assuming a Gaussian distribution function. The interface state density (N SS) values were found to decrease with increasing temperature. The reverse leakage current mechanism of the V/p-GaN Schottky junction was found to be governed by Poole-Frenkel emission at all temperatures.

Contribution of the backstreaming ions to the Self-Magnetic pinch (SMP) diode current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mazarakis, Michael G.; Cuneo, Michael E.; Fournier, Sean D.

2016-08-08

Summary form only given. The results presented here were obtained with an SMP diode mounted at the front high voltage end of the RITS accelerator. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulses of six 1.3 MV inductively insulated cavities. Our experiments had two objectives: first to measure the contribution of the back-streaming ion currents emitted from the anode target to the diode beam current, and second to try to evaluate the energy of those ions and hence the actual Anode-Cathode (A-K) gap actual voltage. In any very high voltage inductive voltage addermore » (IVA) utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the anode-cathode (A-K) gap is problematic. The accelerating voltage quoted in the literature is from estimates based on measurements of the anode and cathode currents of the MITL far upstream from the diode and utilizing the para-potential flow theories and inductive corrections. Thus it would be interesting to have another independent measurement to evaluate the A-K voltage. The diode's anode is made of a number of high Z metals in order to produce copious and energetic flash x-rays. The backstreaming currents are a strong fraction of the anode materials and their stage of cleanness and gas adsorption. We have measured the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatments, such as heating to very high temperatures with DC and pulsed current, with RF plasma cleaning and with both plasma cleaning and heating. Finally, we have also evaluated the A-K gap voltage by ion filtering techniques.« less

Carrier velocity effect on carbon nanotube Schottky contact

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fathi, Amir, E-mail: fathi.amir@hotmail.com; Ahmadi, M. T., E-mail: mt.ahmadi@urmia.ac.ir; Ismail, Razali, E-mail: Razali@fke.utm.my

One of the most important drawbacks which caused the silicon based technologies to their technical limitations is the instability of their products at nano-level. On the other side, carbon based materials such as carbon nanotube (CNT) as alternative materials have been involved in scientific efforts. Some of the important advantages of CNTs over silicon components are high mechanical strength, high sensing capability and large surface-to-volume ratio. In this article, the model of CNT Schottky transistor current which is under exterior applied voltage is employed. This model shows that its current has a weak dependence on thermal velocity corresponding to themore » small applied voltage. The conditions are quite different for high bias voltages which are independent of temperature. Our results indicate that the current is increased by Fermi velocity, but the I–V curves will not have considerable changes with the variations in number of carriers. It means that the current doesn’t increase sharply by voltage variations over different number of carriers.« less

Analysis of the Temperature Dependence of the Capacitance-Voltage and Conductance-Voltage Characteristics of Au/TiO2(rutile)/ n-Si Structures

NASA Astrophysics Data System (ADS)

KInacI, BarIş; Özçelik, Süleyman

2013-06-01

The capacitance-voltage-temperature ( C- V- T) and the conductance/angular frequency-voltage-temperature ( G/ω- V- T) characteristics of Au/TiO2(rutile)/ n-Si Schottky barrier diodes (SBDs) were investigated over the temperature range from 200 K to 380 K by considering the series resistance effect. Titanium dioxide (TiO2) was deposited on n-type silicon (Si) substrate using a direct-current (DC) magnetron sputtering system at 200°C. To improve the crystal quality, the deposited film was annealed at 900°C to promote a phase transition from the amorphous to rutile phase. The C -2 versus V plots gave a straight line in the reverse-bias region. The main electrical parameters, such as the doping concentration ( N D), Fermi energy level ( E F), depletion layer width ( W D), barrier height ( ф CV), and series resistance ( R S), of Au/TiO2(rutile)/ n-Si SBDs were calculated from the C- V- T and the G/ω- V- T characteristics. The obtained results show that ф CV, R S, and W D values decrease, while E F and N D values increase, with increasing temperature.

Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe_{2} Heterostructures.

PubMed

Burg, G William; Prasad, Nitin; Kim, Kyounghwan; Taniguchi, Takashi; Watanabe, Kenji; MacDonald, Allan H; Register, Leonard F; Tutuc, Emanuel

2018-04-27

We report the experimental observation of strongly enhanced tunneling between graphene bilayers through a WSe_{2} barrier when the graphene bilayers are populated with carriers of opposite polarity and equal density. The enhanced tunneling increases sharply in strength with decreasing temperature, and the tunneling current exhibits a vertical onset as a function of interlayer voltage at a temperature of 1.5 K. The strongly enhanced tunneling at overall neutrality departs markedly from single-particle model calculations that otherwise match the measured tunneling current-voltage characteristics well, and suggests the emergence of a many-body state with condensed interbilayer excitons when electrons and holes of equal densities populate the two layers.

Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe2 Heterostructures

NASA Astrophysics Data System (ADS)

Burg, G. William; Prasad, Nitin; Kim, Kyounghwan; Taniguchi, Takashi; Watanabe, Kenji; MacDonald, Allan H.; Register, Leonard F.; Tutuc, Emanuel

2018-04-01

We report the experimental observation of strongly enhanced tunneling between graphene bilayers through a WSe2 barrier when the graphene bilayers are populated with carriers of opposite polarity and equal density. The enhanced tunneling increases sharply in strength with decreasing temperature, and the tunneling current exhibits a vertical onset as a function of interlayer voltage at a temperature of 1.5 K. The strongly enhanced tunneling at overall neutrality departs markedly from single-particle model calculations that otherwise match the measured tunneling current-voltage characteristics well, and suggests the emergence of a many-body state with condensed interbilayer excitons when electrons and holes of equal densities populate the two layers.

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

NASA Technical Reports Server (NTRS)

Prince, J. L.; Lathrop, J. W.

1979-01-01

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, open circuit voltage, and output power, voltage, and current at the maximum power point. Incorporated in the report are the distributions of the prestress electrical data for all cell types. Data were also obtained on cell series and shunt resistance.

Low Temperature Thermometry Using Inexpensive Silicon Diodes.

ERIC Educational Resources Information Center

Waltham, N. R.; And Others

1981-01-01

Describes the use of silicon diodes for low temperature thermometry in the teaching laboratory. A simple and inexpensive circuit for display of the diode forward voltage under constant current conditions is described, and its application in the evaluation of low cost silicon diodes as low temperature thermometers is presented. (SK)

Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu3Ti4O12 and Pt

NASA Astrophysics Data System (ADS)

Chen, Cong; Ning, Ting-Yin; Wang, Can; Zhou, Yue-Liang; Zhang, Dong-Xiang; Wang, Pei; Ming, Hai; Yang, Guo-Zhen

2011-08-01

CaCu3Ti4O12 (CCTO) thin films were fabricated on ITO-covered MgO (100) substrates. The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging from 150 K to 330 K, which are attributed to the formation of a Schottky junction between n-type semiconducting CCTO and Pt due to the difference of their work functions. At low forward-bias voltage, the current-voltage characteristics of the Schottky junction follow . A strong decrease in ideality factor with the increasing temperature is obtained by linear fitting at the low bias voltage.

Drying temperature effects on electrical and optical properties of poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin film

NASA Astrophysics Data System (ADS)

Azhar, N. E. A.; Affendi, I. H. H.; Shafura, A. K.; Shariffudin, S. S.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2016-07-01

Temperature effects on electrical and optical properties of a representative semiconducting polymer, poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), has recently attracted much attention. The MEH-PPV thin films were deposited at different drying temperature (anneal temperature) using spin-coating technique. The spin coating technique was used to produce uniform film onto large area. The MEH-PPV was dissolved in toluene solution to exhibits different optical and electrical properties. The absorption coefficient and bandgap was measured using UV-Visible-NIR (UV-VIS-NIR). The bandgap of MEH-PPV was effect by the thickness of thin films. For electrical properties, two-point probe was used to characterize the current-voltage measurement. The current-voltage measurement shows that the MEH-PPV thin films become more conductive at high temperature. This study will provide better performance and suitable for optoelectronic device especially OLEDs applications.

Drying temperature effects on electrical and optical properties of poly[2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azhar, N. E. A., E-mail: najwaezira@yahoo.com; Affendi, I. H. H., E-mail: irmahidayanti.halim@gmail.com; Shafura, A. K., E-mail: shafura@ymail.com

Temperature effects on electrical and optical properties of a representative semiconducting polymer, poly[2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), has recently attracted much attention. The MEH-PPV thin films were deposited at different drying temperature (anneal temperature) using spin-coating technique. The spin coating technique was used to produce uniform film onto large area. The MEH-PPV was dissolved in toluene solution to exhibits different optical and electrical properties. The absorption coefficient and bandgap was measured using UV-Visible-NIR (UV-VIS-NIR). The bandgap of MEH-PPV was effect by the thickness of thin films. For electrical properties, two-point probe was used to characterize the current-voltage measurement. The current-voltage measurement showsmore » that the MEH-PPV thin films become more conductive at high temperature. This study will provide better performance and suitable for optoelectronic device especially OLEDs applications.« less

Unexpected Nonlinear Effects in Superconducting Transition-Edge Sensors

NASA Technical Reports Server (NTRS)

Sadleir, John

2016-01-01

When a normal metal transitions into the superconducting state the DC resistance drops from a finite value to zero over some finite transition width in temperature, current, and magnetic field. Superconducting transition-edge sensors (TESs) operate within this transition region and uses resistive changes to measure deposited thermal energy. This resistive transition is not perfectly smooth and a wide range of TES designs and materials show sub-structure in the resistive transition (as seen in smooth nonmonotonic behavior, jump discontinuities, and hysteresis in the devices current-voltage relation and derivatives of the resistance with respect to temperature, bias current, and magnetic field). TES technology has advanced to the point where for many applications this structure is the limiting factor in performance and optimization consists of finding operating points away from these structures. For example, operating at or near this structure can lead to nonlinearity in the detectors response and gain scale, limit the spectral range of the detector by limiting the usable resistive range, and degrade energy resolution. The origin of much of this substructure is unknown. This presentation investigates a number of possible sources in turn. First we model the TES as a superconducting weak-link and solve for the characteristic differential equations current and voltage time dependence. We find:(1) measured DC biased current-voltage relationship is the time-average of a much higher frequency limit cycle solution.(2) We calculate the fundamental frequency and estimate the power radiated from the TES treating the bias leads as an antennae.(3) The solution for a set of circuit parameters becomes multivalued leading to current transitions between levels.(4)The circuit parameters can change the measure resistance and mask the true critical current. As a consequence the TES resistance surface is not just a function of temperature, current, and magnetic field but is also a function of the circuit elements (such as shunt resistor, SQUID inductance, and capacitor values). In other words, same device measured in different electrical circuits will have a different resistive surface in temperature, current, and magnetic field. Next we consider that at the transition temperature of a superconductor both the magnetic penetration depth and coherence length are divergent. As a consequence these important characteristic length scales are changing with operating point. We present measurements on devices showing commensurate behavior between these characteristic lengths and the length scale of added normal metal structures. Reordering of proximity vortices leads to discontinuities and irreversibility of the current-voltage curves. Last we consider a weak-link TES including both thermal activated resistance effects and the effect of the magnetic penetration depth being a function of temperature and magnetic field. We derive its impact on the resistive transition surface and the important device parameters a and b.

Analysis and Modeling of Fullerene Single Electron Transistor Based on Quantum Dot Arrays at Room Temperature

NASA Astrophysics Data System (ADS)

Khadem Hosseini, Vahideh; Ahmadi, Mohammad Taghi; Ismail, Razali

2018-05-01

The single electron transistor (SET) as a fast electronic device is a candidate for future nanoscale circuits because of its low energy consumption, small size and simplified circuit. It consists of source and drain electrodes with a quantum dot (QD) located between them. Moreover, it operates based on the Coulomb blockade (CB) effect. It occurs when the charging energy is greater than the thermal energy. Consequently, this condition limits SET operation at cryogenic temperatures. Hence, using QD arrays can overcome this temperature limitation in SET which can therefore work at room temperature but QD arrays increase the threshold voltage with is an undesirable effect. In this research, fullerene as a zero-dimensional material with unique properties such as quantum capacitance and high critical temperature has been selected for the material of the QDs. Moreover, the current of a fullerene QD array SET has been modeled and its threshold voltage is also compared with a silicon QD array SET. The results show that the threshold voltage of fullerene SET is lower than the silicon one. Furthermore, the comparison study shows that homogeneous linear QD arrays have a lower CB range and better operation than a ring QD array SET. Moreover, the effect of the number of QDs in a QD array SET is investigated. The result confirms that the number of QDs can directly affect the CB range. Moreover, the desired current can be achieved by controlling the applied gate voltage and island diameters in a QD array SET.

Temperature dependent charge transport studies across thermodynamic glass transition in P3HT:PCBM bulk heterojunction: insight from J-V and impedance spectroscopy

NASA Astrophysics Data System (ADS)

Sarkar, Atri; Rahaman, Abdulla Bin; Banerjee, Debamalya

2018-03-01

Temperature dependent charge transport properties of P3HT:PCBM bulk heterojunction are analysed by dc and ac measurements under dark conditions across a wide temperature range of 110-473 K, which includes the thermodynamic glass transition temperature (Tg ˜320 K) of the system. A change from Ohmic conduction to space charge limited current conduction at higher (⩾1.2 V) applied bias voltages above  ⩾200 K is observed from J-V characteristics. From capacitance-voltage (C-V) measurement at room temperature, the occurrence of a peak near the built-in voltage is observed below the dielectric relaxation frequency, originating from the competition between drift and diffusion driven motions of charges. Carrier concentration (N) is calculated from C-V measurements taken at different temperatures. Room temperature mobility values at various applied bias voltages are in accordance with that obtained from transient charge extraction by linearly increasing voltage measurement. Sample impedance is measured over five decades of frequency across temperature range by using lock-in detection. This data is used to extract temperature dependence of carrier mobility (μ), and dc conductivity (σ_dc ) which is low frequency extrapolation of ac conductivity. An activation energy of  ˜126 meV for the carrier hopping process at the metal-semiconductor interface is estimated from temperature dependence of σ_dc . Above T g, μ levels off to a constant value, whereas σ_dc starts to decrease after a transition knee at T g that can be seen as a combined effect of changes in μ and N. All these observed changes across T g can be correlated to enhanced polymer motion above the glass transition.

Magnetic field induced suppression of the forward bias current in Bi2Se3/Si Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Jin, Haoming; Hebard, Arthur

Schottky diodes formed by van der Waals bonding between freshly cleaved flakes of the topological insulator Bi2Se3 and doped silicon substrates show electrical characteristics in good agreement with thermionic emission theory. The motivation is to use magnetic fields to modulate the conductance of the topologically protected conducting surface state. This surface state in close proximity to the semiconductor surface may play an important role in determining the nature of the Schottky barrier. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were obtained for temperatures in the range 50-300 K and magnetic fields, both perpendicular and parallel to the interface, as high as 7 T. The I-V curve shows more than 6 decades linearity on semi-logarithmic plots, allowing extraction of parameters such as ideality (η), zero-voltage Schottky barrier height (SBH), and series resistance (Rs). In forward bias we observe a field-induced decrease in current which becomes increasingly more pronounced at higher voltages and lower temperature, and is found to be correlated with changes in Rs rather than other barrier parameters. A comparison of changes in Rs in both field direction will be made with magnetoresistance in Bi2Se3 transport measurement. The work is supported by NSF through DMR 1305783.

Investigation of the double exponential in the current-voltage characteristics of silicon solar cells. [proton irradiation effects on ATS 1 cells

NASA Technical Reports Server (NTRS)

Wolf, M.; Noel, G. T.; Stirn, R. J.

1977-01-01

Difficulties in relating observed current-voltage characteristics of individual silicon solar cells to their physical and material parameters were underscored by the unexpected large changes in the current-voltage characteristics telemetered back from solar cells on the ATS-1 spacecraft during their first year in synchronous orbit. Depletion region recombination was studied in cells exhibiting a clear double-exponential dark characteristic by subjecting the cells to proton irradiation. A significant change in the saturation current, an effect included in the Sah, Noyce, Shockley formulation of diode current resulting from recombination in the depletion region, was caused by the introduction of shallow levels in the depletion region by the proton irradiation. This saturation current is not attributable only to diffusion current from outside the depletion region and only its temperature dependence can clarify its origin. The current associated with the introduction of deep-lying levels did not change significantly in these experiments.

Radio frequency-assisted fast superconducting switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovyov, Vyacheslav; Li, Qiang

A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET maymore » be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.« less

Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Ching-Lin Fan,; Hui-Lung Lai,; Jyu-Yu Chang,

2010-05-01

In this paper, we propose a novel pixel design and driving method for active-matrix organic light-emitting diode (AM-OLED) displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). The proposed threshold voltage compensation circuit, which comprised five transistors and two capacitors, has been verified to supply uniform output current by simulation work using the automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE) simulator. The driving scheme of this voltage programming method includes four periods: precharging, compensation, data input, and emission. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<1%) and high output current. The proposed pixel circuit shows high immunity to the threshold voltage deviation characteristics of both the driving poly-Si TFT and the OLED.

Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics.

PubMed

Xu, Wangying; Cao, Hongtao; Liang, Lingyan; Xu, Jian-Bin

2015-07-15

We reported a novel aqueous route to fabricate Ga2O3 dielectric at low temperature. The formation and properties of Ga2O3 were investigated by a wide range of characterization techniques, revealing that Ga2O3 films could effectively block leakage current even after annealing in air at 200 °C. Furthermore, all aqueous solution-processed In2O3/Ga2O3 TFTs fabricated at 200 and 250 °C showed mobilities of 1.0 and 4.1 cm2 V(-1) s(-1), on/off current ratio of ∼10(5), low operating voltages of 4 V, and negligible hysteresis. Our study represents a significant step toward the development of low-cost, low-temperature, and large-area green oxide electronics.

Prospects of In/CdTe X- and γ-ray detectors with MoO Ohmic contacts

NASA Astrophysics Data System (ADS)

Maslyanchuk, Olena L.; Solovan, Mykhailo M.; Maistruk, Eduard V.; Brus, Viktor V.; Maryanchuk, Pavlo D.; Gnatyuk, Volodymyr A.; Aoki, Toru

2018-01-01

The present paper analyzes the charge transport mechanisms and spectrometric properties of In/CdTe/MoOx heterojunctions prepared by magnetron sputtering of indium and molybdenum oxide thin films onto semi-insulating p-type single-crystal CdTe semiconductor, produced by Acrorad Co. Ltd. Current-voltage characteristics of the detectors at different temperatures were investigated. The charge transport mechanisms in the heterostructures under investigation were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and the space charge limited currents at high voltages. The spectra of 137Cs and 241Am isotopes taken at different applied bias voltages are presented. It is shown that the In/CdTe/MoOx structures can be used as X/γ-ray detectors in the spectrometric mode.

Conduction Mechanisms in Multiferroic Multilayer BaTiO3/NiFe2O4/BaTiO3 Memristors

NASA Astrophysics Data System (ADS)

Samardzic, N.; Bajac, B.; Srdic, V. V.; Stojanovic, G. M.

2017-10-01

Memristive devices and materials are extensively studied as they offer diverse properties and applications in digital, analog and bio-inspired circuits. In this paper, we present an important class of memristors, multiferroic memristors, which are composed of multiferroic multilayer BaTiO3/NiFe2O4/BaTiO3 thin films, fabricated by a spin-coating deposition technique on platinized Si wafers. This cost-effective device shows symmetric and reproducible current-voltage characteristics for the actuating voltage amplitude of ±10 V. The origin of the conduction mechanism was investigated by measuring the electrical response in different voltage and temperature conditions. The results indicate the existence of two mechanisms: thermionic emission and Fowler-Nordheim tunnelling, which alternate with actuating voltage amplitude and operating temperature.

Wireless Infrared Data Link

NASA Technical Reports Server (NTRS)

Roth, Timothy E.

1995-01-01

Infrared transmitter and receiver designed for wireless transmission of information on measured physical quantity (for example, temperature) from transducer device to remote-acquisition system. In transmitter, output of transducer amplified and shifted with respect to bias or reference level, then fed to voltage-to-frequency converter to control frequency of repetition of current pulses applied to infrared-light-emitting diode. In receiver, frequency of repetition of pulses converted back into voltage indicative of temperature or other measured quantity. Potential applications include logging data while drilling for oil, transmitting measurements from rotors in machines without using slip rings, remote monitoring of temperatures and pressures in hazardous locations, and remote continuous monitoring of temperatures and blood pressures in medical patients, who thus remain mobile.

Temperature dependent charge transport in poly(3-hexylthiophene) diodes

NASA Astrophysics Data System (ADS)

Rahaman, Abdulla Bin; Sarkar, Atri; Banerjee, Debamalya

2018-04-01

In this work, we present charge transport properties of poly(3-hexylthiophene) (P3HT) diodes under dark conditions. Temperature dependent current-voltage (J-V) characteristics shows that charge transport represents a transition from ohomic to trap limited current. The forward current density obeys a power law J˜Vm, m>2 represents the space charge limited current region in presence of traps within the band gap. Frequency dependent conductivity has been studied in a temperature range 150K-473K. The dc conductivity values show Arrhenius like behavior and it gives conductivity activation energy 223 meV. Temperature dependent conductivity indicates a thermodynamic transition of our system.

High-voltage electrode optimization towards uniform surface treatment by a pulsed volume discharge

NASA Astrophysics Data System (ADS)

Ponomarev, A. V.; Pedos, M. S.; Scherbinin, S. V.; Mamontov, Y. I.; Ponomarev, S. V.

2015-11-01

In this study, the shape and material of the high-voltage electrode of an atmospheric pressure plasma generation system were optimised. The research was performed with the goal of achieving maximum uniformity of plasma treatment of the surface of the low-voltage electrode with a diameter of 100 mm. In order to generate low-temperature plasma with the volume of roughly 1 cubic decimetre, a pulsed volume discharge was used initiated with a corona discharge. The uniformity of the plasma in the region of the low-voltage electrode was assessed using a system for measuring the distribution of discharge current density. The system's low-voltage electrode - collector - was a disc of 100 mm in diameter, the conducting surface of which was divided into 64 radially located segments of equal surface area. The current at each segment was registered by a high-speed measuring system controlled by an ARM™-based 32-bit microcontroller. To facilitate the interpretation of results obtained, a computer program was developed to visualise the results. The program provides a 3D image of the current density distribution on the surface of the low-voltage electrode. Based on the results obtained an optimum shape for a high-voltage electrode was determined. Uniformity of the distribution of discharge current density in relation to distance between electrodes was studied. It was proven that the level of non-uniformity of current density distribution depends on the size of the gap between electrodes. Experiments indicated that it is advantageous to use graphite felt VGN-6 (Russian abbreviation) as the material of the high-voltage electrode's emitting surface.

The effects of fabrication temperature on current-voltage characteristics and energy efficiencies of quantum dot sensitized ZnOH-GO hybrid solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Islam, S. M. Z.; Department of Physics and Engineering Physics, Fordham University, 441 E. Fordham Road, Bronx, New York 10458; Department of Electrical Engineering, The City College of New York, 160 Convent Ave., New York, New York 10031

2014-11-07

The effects of fabrication temperature are investigated on the performance of CdSe quantum dot (QD)-sensitized hybrid solar cells of the composite material of zinc (hydr)oxide (ZnOH-GO)with 2 wt. % graphite oxide. The current-voltage (I-V) and photo-current measurements show that higher fabrication temperatures yield greater photovoltaic power conversion efficiencies that essentially indicate more efficient solar cells. Two Photon Fluorescence images show the effects of temperature on the internal morphologies of the solar devices based on such materials. The CdSe-QD sensitized ZnOH-GO hybrid solar cells fabricated at 450 °C showing conversion of ∼10.60% under a tungsten lamp (12.1 mW/cm{sup 2}) are reported here, while usingmore » potassium iodide as an electrolyte. The output photocurrent, I (μA) with input power, P (mW/cm{sup 2}) is found to be superlinear, showing a relation of I = P{sup n}, where n = 1.4.« less

The influence of superimposed DC current on electrical and spectroscopic characteristics of HiPIMS discharge

NASA Astrophysics Data System (ADS)

Zuo, Xiao; Chen, Rende; Liu, Jingzhou; Ke, Peiling; Wang, Aiying

2018-01-01

The electrical characteristics and spectroscopic properties have been comprehensively investigated in a DC superimposed high power impulse magnetron sputtering (DC-HiPIMS) deposition system in this paper. The influence of superimposed DC current on the variation of target and substrate current waveforms, active species and electron temperatures with pulse voltages are focused. The peak target currents in DC-HiPIMS are lower than in HiPIMS. The time scales of the two main discharge processes like ionization and gas rarefaction in DC-HiPIMS are analyzed. When the pulse voltage is higher than 600 V, the gas rarefaction effect becomes apparent. Overall, the ionization process is found to be dominant in the initial ˜100 μs during each pulse. The active species of Ar and Cr in DC-HiPIMS are higher than in HiPIMS unless that the pulse voltage reaches 900 V. However, the ionization degree in HiPIMS exceeds that in DC-HiPIMS at around 600 V. The electron temperature calculated by modified Boltzmann plot method based on corona model has a precipitous increase from 0.87 to 25.0 eV in HiPIMS, but varies mildly after the introduction of the superimposed DC current. Additionally, the current from plasma flowing to the substrate is improved when a DC current is superimposed with HiPIMS.

Advanced Materials for High Temperature, High Performance, Wide Bandgap Power Modules

NASA Astrophysics Data System (ADS)

O'Neal, Chad B.; McGee, Brad; McPherson, Brice; Stabach, Jennifer; Lollar, Richard; Liederbach, Ross; Passmore, Brandon

2016-01-01

Advanced packaging materials must be utilized to take full advantage of the benefits of the superior electrical and thermal properties of wide bandgap power devices in the development of next generation power electronics systems. In this manuscript, the use of advanced materials for key packaging processes and components in multi-chip power modules will be discussed. For example, to date, there has been significant development in silver sintering paste as a high temperature die attach material replacement for conventional solder-based attach due to the improved thermal and mechanical characteristics as well as lower processing temperatures. In order to evaluate the bond quality and performance of this material, shear strength, thermal characteristics, and void quality for a number of silver sintering paste materials were analyzed as a die attach alternative to solder. In addition, as high voltage wide bandgap devices shift from engineering samples to commercial components, passivation materials become key in preventing premature breakdown in power modules. High temperature, high dielectric strength potting materials were investigated to be used to encapsulate and passivate components internal to a power module. The breakdown voltage up to 30 kV and corresponding leakage current for these materials as a function of temperature is also presented. Lastly, high temperature plastic housing materials are important for not only discrete devices but also for power modules. As the operational temperature of the device and/or ambient temperature increases, the mechanical strength and dielectric properties are dramatically reduced. Therefore, the electrical characteristics such as breakdown voltage and leakage current as a function of temperature for housing materials are presented.

Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Taewoong; Seong, Tae-Yeon; School of Materials Science and Engineering, Korea University, Seoul 136-713

Efficiency droop is a phenomenon in which the efficiency of a light-emitting diode (LED) decreases with the increase in current density. To analyze efficiency droop, direct experimental observations on the energy conversion occurring inside the LED is required. Here, we present the measured voltage profiles on the cross section of an operating LED and analyze them with the cross-sectional temperature profiles obtained in a previous study under the same operation conditions. The measured voltage profiles suggest that with increases in the injection current density, electron depletion shifts from the multi-quantum well through an electron blocking layer to the p-GaN region.more » This is because electron leakage increases with increases in current density.« less

Design of a Miniaturized RAD Hard Point-of-Load Converter

NASA Astrophysics Data System (ADS)

Lofgren, Henrik; Landstrom, Sven; Gunnarsson, Marcus; Hagstrom, Maria

2014-08-01

As an ARTES 5.2 activity, a miniaturized radiation hardened Point-Of-Load converter (uPOL) has been developed. Several different design options have been evaluated before the final system level design was selected. The selected topology is a buck regulator with synchronous rectification utilizing peak current mode control. The PWM logic is designed using discrete electronics. Inside the POL converter package, an independent latching current limiter and clamping over- voltage protection are included as protection devices. The converter has an input voltage range of 4.8-6.2V, output voltage range of 1.2-3.5V and an output current of 0-3.5A. The final converter will be a metal packaged hybrid built on LTCC technology with an operating case temperature range of -40 to +85 °C.

A future, intense source of negative hydrogen ions

NASA Technical Reports Server (NTRS)

Siefken, Hugh; Stein, Charles

1994-01-01

By directly heating lithium hydride in a vacuum, up to 18 micro-A/sq cm of negative hydrogen has been obtained from the crystal lattice. The amount of ion current extracted and analyzed is closely related to the temperature of the sample and to the rate at which the temperature is changed. The ion current appears to be emission limited and saturates with extraction voltage. For a fixed extraction voltage, the ion current could be maximized by placing a grid between the sample surface and the extraction electrode. Electrons accompanying the negative ions were removed by a magnetic trap. A Wein velocity filter was designed and built to provide definitive mass analysis of the extracted ion species. This technique when applied to other alkali hydrides may produce even higher intensity beams possessing low values of emittance.

Experimental study of atmospheric-pressure micro-plasmas for the ambient sampling of conductive materials

NASA Astrophysics Data System (ADS)

Duan, Zhengchao; He, Feng; Si, Xinlu; Bradley, James W.; Ouyang, Jiting

2018-02-01

Conductive solid material sampling by micro-plasma under ambient atmosphere was studied experimentally. A high-voltage pulse generator was utilized to drive discharge between a tungsten needle and metal samples. The effects of pulse width on discharge, micro-plasma and sampling were investigated. The electrical results show that two discharge current pulses can be formed in one voltage pulse. The duration of the first current pulse is of the order of 100 ns. The duration of the second current pulse depends on the width of the voltage pulse. The electrical results also show that arc micro-plasma was generated during both current pulses. The results of the emission spectra of different sampled materials indicate that the relative emission intensity of elemental metal ions will increase with pulse width. The excitation temperature and electron density of the arc micro-plasmas increase with the voltage pulse width, which contributes to the increase of relative emission intensity of metal ions. The optical images and energy dispersive spectroscopy results of the sampling spots on metal surfaces indicate that discharge with a short voltage pulse can generate a small sputtering crater.

Current-voltage characteristics of manganite-titanite perovskite junctions.

PubMed

Ifland, Benedikt; Peretzki, Patrick; Kressdorf, Birte; Saring, Philipp; Kelling, Andreas; Seibt, Michael; Jooss, Christian

2015-01-01

After a general introduction into the Shockley theory of current voltage (J-V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite-titanate p-n heterojunctions made of n-doped SrTi1- y Nb y O3, y = 0.002 and p-doped Pr1- x Ca x MnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC) in a thin cross plane lamella of the junction. In the J-V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER) effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron-polaron hole-polaron pair generation and separation at the interface.

On electrical and interfacial properties of iron and platinum Schottky barrier diodes on (111) n-type Si0.65Ge0.35

NASA Astrophysics Data System (ADS)

Hamri, D.; Teffahi, A.; Djeghlouf, A.; Chalabi, D.; Saidane, A.

2018-04-01

Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/ω-V-f) characteristics of Molecular Beam Epitaxy (MBE)-deposited Fe/n-Si0.65Ge0.35 (FM1) and Pt/n-Si0.65Ge0.35(PM2) (111) orientated Schottky barrier diodes (SBDs) have been investigated at room-temperature. Barrier height (ΦB0), ideality factor (n) and series resistance (RS) were extracted. Dominant current conduction mechanisms were determined. They revealed that Poole-Frenkel-type conduction mechanism dominated reverse current. Differences in shunt resistance confirmed the difference found in leakage current. Under forward bias, quasi-ohmic conduction is found at low voltage regions and space charge-limited conduction (SCLC) at higher voltage regions for both SBDs. Density of interface states (NSS) indicated a difference in interface reactivity. Distribution profiles of series resistance (RS) with bias gives a peak in depletion region at low-frequencies that disappears with increasing frequencies. These results show that interface states density and series resistance of Schottky diodes are important parameters that strongly influence electrical properties of FM1 and PM2 structures.

Temperature dependence of the pulse-duration memory effect in NbSe3

NASA Astrophysics Data System (ADS)

Jones, T. C.; Simpson, C. R., Jr.; Clayhold, J. A.; McCarten, J. P.

2000-04-01

The temperature dependence of the oscillatory response of the 59 K charge-density wave in NbSe3 to a sequence of repetitive current pulses was investigated. For 52 K>T>45 K the learned behavior commonly referred to as the pulse-duration memory effect (PDME) is very evident; after training the voltage oscillation always finishes the pulse at a minimum. At lower temperatures the PDME changes qualitatively. In nonswitching samples the voltage oscillation always finishes the pulse increasing. In switching samples there is a conduction delay which becomes fixed after training, but no learning of the duration of the pulse.

77 FR 30555 - Petitions for Modification of Application of Existing Mandatory Safety Standards

Federal Register 2010, 2011, 2012, 2013, 2014

2012-05-23

..., oscilloscopes, vibration analysis machines, insulation testers (meggers), and cable fault detectors (impulse... temperature probes; infrared temperature devices and recorders; insulation testers (meggers); voltage, current..., vibration analysis machines, insulation testers (meggers), and cable fault detectors (impulse generators and...

Deployed Base Solar Power (BRIEFING SLIDES)

DTIC Science & Technology

2009-09-01

various time intervals. Data Acquisitions and Components:  FieldPoint  Current, Voltage, and Power Transducers  POA Pyranometers  Solar...Tracking Pyranometer  Weather Station  kWh Meter Parameters being monitored:  Solar Module Temperatures  Ambient Temperature  Wind Speed  Wind

A Gain-Programmable Transit-Time-Stable and Temperature-Stable PMT Voltage Divider

NASA Astrophysics Data System (ADS)

Liu, Yaqiang; Li, Hongdi; Wang, Yu; Xing, Tao; Xie, Shuping; Uribe, J.; Baghaei, H.; Ramirez, R.; Kim, Soonseok; Wong, Wai-Hoi

2004-10-01

A gain-programmable, transit-time-stable, temperature-stable photomultiplier (PMT) voltage divider design is described in this paper. The signal-to-noise ratio can be increased by changing a PMT gain directly instead of adjusting the gain of the preamplifier. PMT gain can be changed only by adjusting the voltages for the dynodes instead of changing the total high voltage between the anode and the photocathode, which can cause a significant signal transit-time variation that cannot be accepted by an application with a critical timing requirement, such as positron emission tomography (PET) or time-of-flight (TOF) detection/PET. The dynode voltage can be controlled by a digital analog converter isolated with a linear optocoupler. The optocoupler consists of an infrared light emission diode (LED) optically coupled with two phototransistors, and one is used in a servo feedback circuit to control the LED drive current for compensating temperature characteristics. The results showed that a six times gain range could be achieved; the gain drift was <0.5% over a 20/spl deg/C temperature range; 250 ps transit-time variation was measured over the entire gain range. A compact print circuit board (PCB) for the voltage divider integrated with a fixed-gain preamplifier has been designed and constructed. It can save about $30 per PMT channel compared with a commercial PMT voltage divider along with a variable gain amplifier. The preamplifier can be totally disabled, therefore in a system with a large amount of PMTs, only one channel can be enabled for calibrating the PMT gain. This new PMT voltage divider design is being applied to our animal PET camera and TOF/PET research.

The temperature dependence of the characteristics of crystalline-silicon-based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Sachenko, A. V.; Kryuchenko, Yu. V.; Kostylyov, V. P.; Korkishko, R. M.; Sokolovskyi, I. O.; Abramov, A. S.; Abolmasov, S. N.; Andronikov, D. A.; Bobyl', A. V.; Panaiotti, I. E.; Terukov, E. I.; Titov, A. S.; Shvarts, M. Z.

2016-03-01

Temperature dependences of the photovoltaic characteristics of ( p)a-Si/( i)a-Si:H/( n)c-Si singlecrystalline- silicon based heterojunction-with-intrinsic-thin-layer (HIT) solar cells have been measured in a temperature range of 80-420 K. The open-circuit voltage ( V OC), fill factor ( FF) of the current-voltage ( I-U) characteristic, and maximum output power ( P max) reach limiting values in the interval of 200-250 K on the background of monotonic growth in the short-circuit current ( I SC) in a temperature range of 80-400 K. At temperatures below this interval, the V OC, FF, and P max values exhibit a decrease. It is theoretically justified that a decrease in the photovoltaic energy conversion characteristics of solar cells observed on heating from 250 to 400 K is related to exponential growth in the intrinsic conductivity. At temperatures below 200 K, the I-U curve shape exhibits a change that is accompanied by a drop in V OC. Possible factors that account for the decrease in V OC, FF, and P max are considered.

In-Situ Measurement of High-Temperature Proton Exchange Membrane Fuel Cell Stack Using Flexible Five-in-One Micro-Sensor

PubMed Central

Lee, Chi-Yuan; Weng, Fang-Bor; Kuo, Yzu-Wei; Tsai, Chao-Hsuan; Cheng, Yen-Ting; Cheng, Chih-Kai; Lin, Jyun-Ting

2016-01-01

In the chemical reaction that proceeds in a high-temperature proton exchange membrane fuel cell stack (HT-PEMFC stack), the internal local temperature, voltage, pressure, flow and current nonuniformity may cause poor membrane material durability and nonuniform fuel distribution, thus influencing the performance and lifetime of the fuel cell stack. In this paper micro-electro-mechanical systems (MEMS) are utilized to develop a high-temperature electrochemical environment-resistant five-in-one micro-sensor embedded in the cathode channel plate of an HT-PEMFC stack, and materials and process parameters are appropriately selected to protect the micro-sensor against failure or destruction during long-term operation. In-situ measurement of the local temperature, voltage, pressure, flow and current distributions in the HT-PEMFC stack is carried out. This integrated micro-sensor has five functions, and is favorably characterized by small size, good acid resistance and temperature resistance, quick response, real-time measurement, and the goal is being able to be put in any place for measurement without affecting the performance of the battery. PMID:27763559

In-Situ Measurement of High-Temperature Proton Exchange Membrane Fuel Cell Stack Using Flexible Five-in-One Micro-Sensor.

PubMed

Lee, Chi-Yuan; Weng, Fang-Bor; Kuo, Yzu-Wei; Tsai, Chao-Hsuan; Cheng, Yen-Ting; Cheng, Chih-Kai; Lin, Jyun-Ting

2016-10-18

In the chemical reaction that proceeds in a high-temperature proton exchange membrane fuel cell stack (HT-PEMFC stack), the internal local temperature, voltage, pressure, flow and current nonuniformity may cause poor membrane material durability and nonuniform fuel distribution, thus influencing the performance and lifetime of the fuel cell stack. In this paper micro-electro-mechanical systems (MEMS) are utilized to develop a high-temperature electrochemical environment-resistant five-in-one micro-sensor embedded in the cathode channel plate of an HT-PEMFC stack, and materials and process parameters are appropriately selected to protect the micro-sensor against failure or destruction during long-term operation. In-situ measurement of the local temperature, voltage, pressure, flow and current distributions in the HT-PEMFC stack is carried out. This integrated micro-sensor has five functions, and is favorably characterized by small size, good acid resistance and temperature resistance, quick response, real-time measurement, and the goal is being able to be put in any place for measurement without affecting the performance of the battery.

Study of Ag/RGO/ITO sandwich structure for resistive switching behavior deposited on plastic substrate

NASA Astrophysics Data System (ADS)

Vartak, Rajdeep; Rag, Adarsh; De, Shounak; Bhat, Somashekhara

2018-05-01

We report here the use of facile and environmentally benign way synthesized reduced graphene oxide (RGO) for low-voltage non-volatile memory device as charge storing element. The RGO solutions have been synthesized using electrochemical exfoliation of battery electrode. The solution processed based RGO solution is suitable for large area and low-cost processing on plastic substrate. Room-temperature current-voltage characterisation has been carried out in Ag/RGO/ITO PET sandwich configuration to study the type of trap distribution. It is observed that in the low-voltage sweep, ohmic current is the main mechanism of current flow and trap filled/assisted conduction is observed at high-sweep voltage region. The Ag/RGO/ITO PET sandwich structure showed bipolar resistive switching behavior. These mechanisms can be analyzed based on oxygen availability and vacancies in the RGO giving rise to continuous least resistive path (conductive) and high resistance path along the structure. An Ag/RGO/ITO arrangement demonstrates long retention time with low operating voltage, low set/reset voltage, good ON/OFF ratio of 103 (switching transition between lower resistance state and higher resistance state and decent switching performance. The RGO memory showed decent results with an almost negligible degradation in switching properties which can be used for low-voltage and low-cost advanced flexible electronics.

A theory of single-electron non-adiabatic tunneling through a small metal nanoparticle with due account of the strong interaction of valence electrons with phonons of the condensed matter environment.

PubMed

Medvedev, Igor G

2011-11-07

A theory of electrochemical behavior of small metal nanoparticles (NPs) which is governed both by the charging effect and the effect of the solvent reorganization on the dynamic of the electron transfer (ET) is considered under ambient conditions. The exact expression for the rate constant of ET from an electrode to NP which is valid for all values of the reorganization free energy E(r), bias voltage, and overpotential is obtained in the non-adiabatic limit. The tunnel current/overpotential relations are studied and calculated for different values of the bias voltage and E(r). The effect of E(r) on the full width at half maximum of the charging peaks is investigated at different values of the bias voltage. The differential conductance/bias voltage and the tunnel current/bias voltage dependencies are also studied and calculated. It is shown that, at room temperature, the pronounced Coulomb blockade oscillations in the differential conductance/bias voltage curves and the noticeable Coulomb staircase in the tunnel current/bias voltage relations are observed only at rather small values of E(r) in the case of the strongly asymmetric tunneling contacts.

Surface morphological, electrical and transport properties of rapidly annealed double layers Ru/Cr Schottky structure on n-type InP

NASA Astrophysics Data System (ADS)

Shanthi Latha, K.; Rajagopal Reddy, V.

2017-07-01

The electrical and transport properties of a fabricated bilayer Ru/Cr/ n-InP Schottky diode (SD) have been investigated at different annealing temperatures. Atomic force microscopy results have showed that the overall surface morphology of the Ru/Cr/ n-InP SD is fairly smooth at elevated temperatures. High barrier height is achieved for the diode annealed at 300 °C compared to the as-deposited, annealed at 200 and 400 °C diodes. The series resistance and shunt resistance of the Ru/Cr/ n-InP SD are estimated by current-voltage method at different annealing temperatures. The barrier heights and series resistance are also determined by Cheung's and modified Norde functions. The interface state density of the Ru/Cr/ n-InP SD is found to be decreased after annealing at 300 °C and then slightly increased upon annealing at 400 °C. The difference between barrier heights obtained from current-voltage and capacitance-voltage is also discussed. Experimental results have showed that the Poole-Frenkel emission is found to be dominant in the lower bias region whereas Schottky emission is dominant in the higher bias region for the Ru/Cr/ n-InP SDs irrespective of annealing temperatures.

Fiber-optic sensors for aerospace electrical measurements - An update

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Rose, A. H.; Tang, D.; Day, G. W.

1991-01-01

The authors report the progress made on the development of aerospace current and voltage sensors which use fiber-optic and optical sensing heads. These sensors are presently designed to cover ac frequencies from 60 Hz to 20 kHz. The current sensor, based on the Faraday effect in optical fiber, is in advanced development after some initial testing. The emphasis is on packaging methods and ways to maintain consistent sensitivity with changes in temperature. The voltage sensor, utilizing the Pockels effect in a crystal, has excelled in temperature tests. The authors report on the development of these sensors. The authors also relate the technology used in the sensors, the results of evaluation, improvements being made, and the future direction of the work.

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawarada, H., E-mail: kawarada@waseda.jp; Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555; Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051

2014-07-07

By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400 °C (673 K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600 V at a gate-drain distance (L{sub GD}) of 7 μm. We fabricated some MOSFETs for which V{sub B}/L{sub GD} > 100 V/μm. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-Hmore » surface by atomic layer deposition (ALD) at 450 °C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400 °C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400 °C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.« less

Temperature analysis with voltage-current time differential operation of electrochemical sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woo, Leta Yar-Li; Glass, Robert Scott; Fitzpatrick, Joseph Jay

A method for temperature analysis of a gas stream. The method includes identifying a temperature parameter of an affected waveform signal. The method also includes calculating a change in the temperature parameter by comparing the affected waveform signal with an original waveform signal. The method also includes generating a value from the calculated change which corresponds to the temperature of the gas stream.

Effect of Channel Thickness, Annealing Temperature and Channel Length on Nanoscale Ga2O3-In2O3-ZnO Thin Film Transistor Performance.

PubMed

Kumaresan, Yogeenth; Pak, Yusin; Lim, Namsoo; Lee, Ryeri; Song, Hui; Kim, Tae Heon; Choi, Boran; Jung, Gun Young

2016-06-01

We demonstrated the effect of active layer (channel) thickness and annealing temperature on the electrical performances of Ga2O3-In2O3-ZnO (GIZO) thin film transistor (TFT) having nanoscale channel width (W/L: 500 nm/100 μm). We found that the electron carrier concentration of the channel was decreased significantly with increasing the annealing temperature (100 degrees C to 300 degrees C). Accordingly, the threshold voltage (V(T)) was shifted towards positive voltage (-12.2 V to 10.8 V). In case of channel thickness, the V(T) was shifted towards negative voltage with increasing the channel thickness. The device with channel thickness of 90 nm annealed at 200 degrees C revealed the best device performances in terms of mobility (10.86 cm2/Vs) and V(T) (0.8 V). The effect of channel length was also studied, in which the channel width, thickness and annealing temperature were kept constant such as 500 nm, 90 nm and 200 degrees C, respectively. The channel length influenced the on-current level significantly with small variation of V(T), resulting in lower value of on/off current ratio with increasing the channel length. The device with channel length of 0.5 μm showed enhanced on/off current ratio of 10(6) with minimum V(T) of 0.26 V.

Temperature dependence of current-and capacitance-voltage characteristics of an Au/4H-SiC Schottky diode

NASA Astrophysics Data System (ADS)

Gülnahar, Murat

2014-12-01

In this study, the current-voltage (I-V) and capacitance-voltage (C-V) measurements of an Au/4H-SiC Schottky diode are characterized as a function of the temperature in 50-300 K temperature range. The experimental parameters such as ideality factor and apparent barrier height presents to be strongly temperature dependent, that is, the ideality factor increases and the apparent barrier height decreases with decreasing temperature, whereas the barrier height values increase with the temperature for C-V data. Likewise, the Richardson plot deviates at low temperatures. These anomaly behaviors observed for Au/4H-SiC are attributed to Schottky barrier inhomogeneities. The barrier anomaly which relates to interface of Au/4H-SiC is also confirmed by the C-V measurements versus the frequency measured in 300 K and it is interpreted by both Tung's lateral inhomogeneity model and multi-Gaussian distribution approach. The values of the weighting coefficients, standard deviations and mean barrier height are calculated for each distribution region of Au/4H-SiC using the multi-Gaussian distribution approach. In addition, the total effective area of the patches NAe is obtained at separate temperatures and as a result, it is expressed that the low barrier regions influence meaningfully to the current transport at the junction. The homogeneous barrier height value is calculated from the correlation between the ideality factor and barrier height and it is noted that the values of standard deviation from ideality factor versus q/3kT curve are in close agreement with the values obtained from the barrier height versus q/2kT variation. As a result, it can be concluded that the temperature dependent electrical characteristics of Au/4H-SiC can be successfully commented on the basis of the thermionic emission theory with both models.

Solar Array at Very High Temperatures: Ground Tests

NASA Technical Reports Server (NTRS)

Vayner, Boris

2016-01-01

Solar array design for any spacecraft is determined by the orbit parameters. For example, operational voltage for spacecraft in Low Earth Orbit (LEO) is limited by significant differential charging due to interactions with low temperature plasma. In order to avoid arcing in LEO, solar array is designed to generate electrical power at comparatively low voltages (below 100 volts) or to operate at higher voltages with encapsulation of all suspected discharge locations. In Geosynchronous Orbit (GEO) differential charging is caused by energetic electrons that produce differential potential between the coverglass and the conductive spacecraft body in a kilovolt range. In such a case, the weakly conductive layer over coverglass, indium tin oxide (ITO) is one of the possible measures to eliminate dangerous discharges on array surface. Temperature variations for solar arrays in both orbits are measured and documented within the range of minus150 degrees Centigrade to plus 1100 degrees Centigrade. This wide interval of operational temperatures is regularly reproduced in ground tests with radiative heating and cooling inside a shroud with flowing liquid nitrogen. The requirements to solar array design and tests turn out to be more complicated when planned trajectory crosses these two orbits and goes closer to the Sun. The conductive layer over coverglass causes a sharp increase in parasitic current collected from LEO plasma, high temperature may cause cracks in encapsulating (Room Temperature Vulcanizing (RTV) material; radiative heating of a coupon in vacuum chamber becomes practically impossible above 1500 degrees Centigrade; conductivities of glass and adhesive go up with temperature that decrease array efficiency; and mechanical stresses grow up to critical magnitudes. A few test arrangements and respective results are presented in current paper. Coupons were tested against arcing in simulated LEO and GEO environments under elevated temperatures up to 2000 degrees Centigrade. The dependence of leakage current on temperature was measured, and electrostatic cleanness was verified for coupons with antireflection (AR) coating over the indium tin oxide (ITO) layer.

Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage

NASA Astrophysics Data System (ADS)

Namai, Masaki; An, Junjie; Yano, Hiroshi; Iwamuro, Noriyuki

2018-07-01

In this study, the experimental evaluation and numerical analysis of short-circuit mechanisms of 1200 V SiC planar and trench MOSFETs were conducted at various DC bus voltages from 400 to 800 V. Investigation of the impact of DC bus voltage on short-circuit capability yielded results that are extremely useful for many existing power electronics applications. Three failure mechanisms were identified in this study: thermal runaway, MOS channel current following device turn-off, and rupture of the gate oxide layer (gate oxide layer damage). The SiC MOSFETs experienced lattice temperatures exceeding 1000 K during the short-circuit transient; as Si insulated gate bipolar transistors (IGBTs) are not typically subject to such temperatures, the MOSFETs experienced distinct failure modes, and the mode experienced was significantly influenced by the DC bus voltage. In conclusion, suggestions regarding the SiC MOSFET design and operation methods that would enhance device robustness are proposed.

Scaling properties of ballistic nano-transistors

PubMed Central

2011-01-01

Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade. PMID:21711899

DC partial discharge/environmental test screening of space TWTS

NASA Astrophysics Data System (ADS)

Hai, F.; Paschen, K. W.

Direct-current partial discharge/environmental tests are being conducted on traveling wave tubes (TWTs) designated for long-term space operation to screen out tubes with high voltage defects. Two types of TWTs with different external high-voltage insulation are being examined: (1) TWTs with polymeric potting, and (2) TWTs with ceramic feedthroughs. Detection of high voltage defects in the form of cracks and seprations in potted systems is enhanced by combining dc partial discharge testing with environmental (temperature and pressure) testing. These defects are usually caused by high stresses in the potting produced during temperature excursions by the difference in thermal expansion between the potting material and the confining ceramic-metal structure. Tests of all-ceramic-insulated TWTs indicate that the high voltage problem is internal to the vacuum envelope and requires both leakage and discharge measurements for diagnosis. This problem appears to be field emission from contaminated surfaces.

Plasma parameters in a multidipole plasma system

NASA Astrophysics Data System (ADS)

Ruscanu, D.; Anita, V.; Popa, G.

Plasma potential and electron number densities and electron temperatures under bi-Maxwellian approximation for electron distribution function of the multidipole argon plasma source system were measured for a gas pressure ranging between 10-4 and 10-3 mbar and an anode-cathode voltage ranging between 40 and 120 V but a constant discharge current intensity. The first group, as ultimate or cold electrons and main electron plasma population, results by trapping of the slow electrons produced by ionisation process due to primary-neutral collisions. The trapping process is produced by potential well due to positive plasma potential with respect to the anode so that electron temperature of the ultimate electrons does not depend on both the gas pressure and discharge voltage. The second group, as secondary or hot electrons, results as degrading process of the primaries and their number density increases while their temperature decreases with the increase of both the gas pressure and discharge voltage.

Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors with Laser Spike Annealing

NASA Astrophysics Data System (ADS)

Huang, Hang; Hu, Hailong; Zhu, Jingguang; Guo, Tailiang

2017-07-01

Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) have been fabricated at low temperature using laser spike annealing (LSA) treatment. Coffee-ring effects during the printing process were eliminated to form uniform IGZO films by simply increasing the concentration of solute in the ink. The impact of LSA on the TFT performance was studied. The field-effect mobility, threshold voltage, and on/off current ratio were greatly influenced by the LSA treatment. With laser scanning at 1 mm/s for 40 times, the 30-nm-thick IGZO TFT baked at 200°C showed mobility of 1.5 cm2/V s, threshold voltage of -8.5 V, and on/off current ratio >106. Our findings demonstrate the feasibility of rapid LSA treatment of low-temperature inkjet-printed oxide semiconductor transistors, being comparable to those obtained by conventional high-temperature annealing.

Biased four-point probe resistance

NASA Astrophysics Data System (ADS)

Garcia-Vazquez, Valentin

2017-11-01

The implications of switching the current polarity in a four-point probe resistance measurement are presented. We demonstrate that, during the inversion of the applied current, any change in the voltage V produced by a continuous drop of the sample temperature T will induce a bias in the temperature-dependent DC resistance. The analytical expression for the bias is deduced and written in terms of the variations of the measured voltages with respect to T and by the variations of T with respect to time t. Experimental data measured on a superconducting Nb thin film confirm that the bias of the normal-state resistance monotonically increases with the cooling rate dT/dt while keeping fixed dV/dT; on the other hand, the bias increases with dV/dT, reaching values up to 13% with respect to the unbiased resistance obtained at room temperature.

Intrinsic inhomogeneous barrier height at the n-TiO2/p-Si hole-blocking junction

NASA Astrophysics Data System (ADS)

Kumar, Mohit; Singh, Ranveer; Som, Tapobrata

2018-01-01

Using Kelvin probe force microscopy (KPFM) and temperature-dependent current-voltage characteristics, we study the charge transport across an n-TiO2/p-Si heterojunction. In particular, the KPFM result shows a variation in the work function at the TiO2 surface. On the other hand, temperature-dependent current-voltage characteristics depict a non-ideal hole-blocking behaviour of the same. In addition, the measured barrier height is found to decrease with temperature and does not follow the thermionic emission theory, strongly suggesting an inhomogeneous nature of the barrier. The observed barrier inhomogeneity is attributed to the nanoscale height modulation, arising due to the growth dynamics of TiO2 and corroborates well with the KPFM map. The presented results will open a new avenue to understand the charge transport in TiO2-based nanoscale devices.

A Laboratory Experiment to Measure the Built-In Potential of a P-N Junction by a Photosaturation Method

ERIC Educational Resources Information Center

Ikram, I. Mohamed; Rabinal, M. K.; Mulimani, B. G.

2009-01-01

Here, we propose a simple method for measuring the built-in potential and its temperature dependence of a photodiode by a photosaturation technique. The experimental design facilitates both current-voltage and null voltage measurements as a function of white light intensity. This method gives the built-in potential directly; as a result its…

Effect of anode-cathode geometry on performance of the HIP-1 hot ion plasma. [magnetic mirrors

NASA Technical Reports Server (NTRS)

Lauver, M. R.

1978-01-01

Hot-ion hydrogen plasma experiments were conducted in the NASA Lewis HIP-1 magnetic mirror facility to determine how the ion temperature was influenced by the axial position of the cathode tips relative to the anodes. A steady-state EXB plasma was formed by applying a strong radially inward dc electric field near the throats of the magnetic mirrors. The dc electric field was created between hollow cathode rods inside hollow anode cylinders, both concentric with the magnetic axis. The highest ion temperatures, 900 eV, were attained when the tip of each cathode was in the same plane as the end of its anode. These temperatures were reached with 22 kV applied to the electrodes in a field of 1.1 tesla. Scaling relations were empirically determined for ion temperature and the product of ion density and neutral particle density as a function of cathode voltage, discharge current, and electrode positions. Plasma discharge current vs voltage (I-V) characteristics were determined.

Barrier inhomogeneities and electronic transport of Pt contacts to relatively highly doped n-type 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Lingqin, E-mail: lqhuang@jsnu.edu.cn, E-mail: dwang121@dlut.edu.cn; Wang, Dejun, E-mail: lqhuang@jsnu.edu.cn, E-mail: dwang121@dlut.edu.cn

The barrier characteristics of Pt contacts to relatively highly doped (∼1 × 10{sup 18 }cm{sup −3}) 4H-SiC were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the temperature range of 160–573 K. The barrier height and ideally factor estimated from the I-V characteristics based on the thermionic emission model are abnormally temperature-dependent, which can be explained by assuming the presence of a double Gaussian distribution (GD) of inhomogeneous barrier heights. However, in the low temperature region (160–323 K), the obtained mean barrier height according to GD is lower than the actual mean value from C-V measurement. The values of barrier height determined from themore » thermionic field emission model are well consistent with those from the C-V measurements, which suggest that the current transport process could be modified by electron tunneling at low temperatures.« less

Performance Testing of Thermal Cutting Systems for Sweet Pepper Harvesting Robot in Greenhouse Horticulture

NASA Astrophysics Data System (ADS)

Bachche, Shivaji; Oka, Koichi

2013-03-01

This paper proposes design of end-effector and prototype of thermal cutting system for harvesting sweet peppers. The design consists of two parallel gripper bars mounted on a frame connected by specially designed notch plate and operated by servo motor. Based on voltage and current, two different types of thermal cutting system prototypes; electric arc and temperature arc respectively were developed and tested for performance. In electric arc, a special electric device was developed to obtain high voltage to perform cutting operation. At higher voltage, electrodes generate thermal arc which helps to cut stem of sweet pepper. In temperature arc, nichrome wire was mounted between two electrodes and current was provided directly to electrodes which results in generation of high temperature arc between two electrodes that help to perform cutting operation. In both prototypes, diameters of basic elements were varied and the effect of this variation on cutting operation was investigated. The temperature arc thermal system was found significantly suitable for cutting operation than electric arc thermal system. In temperature arc thermal cutting system, 0.5 mm nichrome wire shows significant results by accomplishing harvesting operation in 1.5 seconds. Also, thermal cutting system found suitable to increase shelf life of fruits by avoiding virus and fungal transformation during cutting process and sealing the fruit stem. The harvested sweet peppers by thermal cutting system can be preserved at normal room temperature for more than 15 days without any contamination.

Resonant tunneling with high peak to valley current ratio in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, D. Y., E-mail: cdy7659@126.com; Nanjing University of posts and Telecommunications, Nanjing 210046; Sun, Y.

We have investigated carrier transport in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V{sup 2}) as a function of 1/V and ln(I) as a function of V{sup 1/2}. Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratiomore » (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages.« less

Characterization of plasma processing induced charging damage to MOS devices

NASA Astrophysics Data System (ADS)

Ma, Shawming

1997-12-01

Plasma processing has become an integral part of the fabrication of integrated circuits and takes at least 30% of whole process steps since it offers advantages in terms of directionality, low temperature and process convenience. However, wafer charging during plasma processes is a significant concern for both thin oxide damage and profile distortion. In this work, the factors affecting this damage will be explained by plasma issues, device structure and oxide quality. The SPORT (Stanford Plasma On-wafer Real Time) charging probe was developed to investigate the charging mechanism of different plasma processes including poly-Si etching, resist ashing and PECVD. The basic idea of this probe is that it simulates a real device structure in the plasma environment and allows measurement of plasma induced charging voltages and currents directly in real time. This measurement is fully compatible with other charging voltage measurement but it is the only one to do in real-time. Effect of magnetic field induced plasma nonuniformity on spatial dependent charging is well understood by this measurement. In addition, the plasma parameters including ion current density and electron temperature can also be extracted from the probe's plasma I-V characteristics using a dc Langmuir probe like theory. It will be shown that the MOS device tunneling current from charging, the dependence on antenna ratio and the etch uniformity can all be predicted by using this measurement. Moreover, the real-time measurement reveals transient and electrode edge effect during processing. Furthermore, high aspect ratio pattern induced electron shading effects can also be characterized by the probe. On the oxide quality issue, wafer temperature during plasma processing has been experimentally shown to be critical to charging damage. Finally, different MOS capacitor testing methods including breakdown voltage, charge-to-breakdown, gate leakage current and voltage-time at constant current bias were compared to find the optimum method for charging device reliability testing.

Status of high temperature superconductor cable and fault current limiter projects at American Superconductor

NASA Astrophysics Data System (ADS)

Maguire, J. F.; Yuan, J.

2009-10-01

This paper will describe the status of three key programs currently underway at American Superconductor Corp. The first program is the LIPA project which is a transmission voltage high temperature superconducting cable program, with funding support from the US Department of Energy. The 600 m cable, capable of carrying 574 MVA, was successfully installed and commissioned in LIPA grid on April 22, 2008. An overview of the project, system level design details and operational data will be provided. In addition, the status of the newly awarded LIPA II project will be described. The second program is Project Hydra, with funding support from the US Department of Homeland Security, to design, develop and demonstrate an HTS cable with fault current limiting functionality. The cable is 300 m long and is being designed to carry 96 MVA at a distribution level voltage of 13.8 kV. The cable will be permanently installed and energized in Manhattan, New York in 2010. The initial status of Project Hydra will be presented. The final program to be discussed is a transmission voltage, high temperature superconducting fault current limiter funded by the US DOE. The project encompasses the design, construction and test of a 115 kV FCL for power transmission within a time frame of 4-5 years. Installation and testing are planned for a Southern California Edison substation. A project overview and progress under the first phase will be reported.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

NASA Astrophysics Data System (ADS)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

2016-01-01

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge2Sb2Te5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.

Spin-dependent electrical conduction in a pentacene Schottky diode explored by electrically detected magnetic resonance

NASA Astrophysics Data System (ADS)

Fukuda, Kunito; Asakawa, Naoki

2017-02-01

Reported is the observation of dark spin-dependent electrical conduction in a Schottky barrier diode with pentacene (PSBD) using electrically detected magnetic resonance at room temperature. It is suggested that spin-dependent conduction exists in pentacene thin films, which is explored by examining the anisotropic linewidth of the EDMR signal and current density-voltage (J-V) measurements. The EDMR spectrum can be decomposed to Gaussian and Lorentzian components. The dependency of the two signals on the applied voltage was consistent with the current density-voltage (J-V) of the PSBD rather than that of the electron-only device of Al/pentacene/Al, indicating that the spin-dependent conduction is due to bipolaron formation associated with hole polaronic hopping processes. The applied-voltage dependence of the ratio of intensity of the Gaussian line to the Lorentzian may infer that increasing current density should make conducting paths more dispersive, thereby resulting in an increased fraction of the Gaussian line due to the higher dispersive g-factor.

Cryogenic transimpedance amplifier for micromechanical capacitive sensors.

PubMed

Antonio, D; Pastoriza, H; Julián, P; Mandolesi, P

2008-08-01

We developed a cryogenic transimpedance amplifier that works at a broad range of temperatures, from room temperature down to 4 K. The device was realized with a standard complementary metal oxide semiconductor 1.5 mum process. Measurements of current-voltage characteristics, open-loop gain, input referred noise current, and power consumption are presented as a function of temperature. The transimpedance amplifier has been successfully applied to sense the motion of a polysilicon micromechanical oscillator at low temperatures. The whole device is intended to serve as a magnetometer for microscopic superconducting samples.

Influence of temperature on the ionization coefficient and ignition voltage of the Townsend discharge in an argon-mercury vapor mixture

NASA Astrophysics Data System (ADS)

Bondarenko, G. G.; Fisher, M. R.; Kristya, V. I.

2017-02-01

The kinetics of main types of charged and excited particles present in a low-current discharge in an argon-mercury vapor mixture used in gas-discharge illuminating lamps has been investigated in a wide interval of the reduced electric field strength and temperature. Mechanisms behind the production and loss of ions and metastable atoms have been discovered, and the temperature dependences of their contributions to maintaining their balance have been determined. It has been shown that, when the discharge is initiated in the lamp and the mercury content in the mixture is low, the ionization coefficient exceeds that in pure argon, which is almost exclusively due to the Penning reaction. The influence of this reaction grows with a reduction of the electric field strength in the interelectrode gap. The dependences of the discharge ignition voltage on the interelectrode gap (Paschen curves) for different temperatures of the mixture have been calculated, and the nonmonotonicity of the temperature dependence of the ignition voltage has been explained.

Reversible calcium alloying enables a practical room-temperature rechargeable calcium-ion battery with a high discharge voltage

NASA Astrophysics Data System (ADS)

Wang, Meng; Jiang, Chunlei; Zhang, Songquan; Song, Xiaohe; Tang, Yongbing; Cheng, Hui-Ming

2018-06-01

Calcium-ion batteries (CIBs) are attractive candidates for energy storage because Ca2+ has low polarization and a reduction potential (-2.87 V versus standard hydrogen electrode, SHE) close to that of Li+ (-3.04 V versus SHE), promising a wide voltage window for a full battery. However, their development is limited by difficulties such as the lack of proper cathode/anode materials for reversible Ca2+ intercalation/de-intercalation, low working voltages (<2 V), low cycling stability, and especially poor room-temperature performance. Here, we report a CIB that can work stably at room temperature in a new cell configuration using graphite as the cathode and tin foils as the anode as well as the current collector. This CIB operates on a highly reversible electrochemical reaction that combines hexafluorophosphate intercalation/de-intercalation at the cathode and a Ca-involved alloying/de-alloying reaction at the anode. An optimized CIB exhibits a working voltage of up to 4.45 V with capacity retention of 95% after 350 cycles.

Design and Experimental Verification of a 0.19 V 53 μW 65 nm CMOS Integrated Supply-Sensing Sensor With a Supply-Insensitive Temperature Sensor and an Inductive-Coupling Transmitter for a Self-Powered Bio-sensing System Using a Biofuel Cell.

PubMed

Kobayashi, Atsuki; Ikeda, Kei; Ogawa, Yudai; Kai, Hiroyuki; Nishizawa, Matsuhiko; Nakazato, Kazuo; Niitsu, Kiichi

2017-12-01

In this paper, we present a self-powered bio-sensing system with the capability of proximity inductive-coupling communication for supply sensing and temperature monitoring. The proposed bio-sensing system includes a biofuel cell as a power source and a sensing frontend that is associated with the CMOS integrated supply-sensing sensor. The sensor consists of a digital-based gate leakage timer, a supply-insensitive time-domain temperature sensor, and a current-driven inductive-coupling transmitter and achieves low-voltage operation. The timer converts the output voltage from a biofuel cell to frequency. The temperature sensor provides a pulse width modulation (PWM) output that is not dependent on the supply voltage, and the associated inductive-coupling transmitter enables proximity communication. A test chip was fabricated in 65 nm CMOS technology and consumed 53 μW with a supply voltage of 190 mV. The low-voltage-friendly design satisfied the performance targets of each integrated sensor without any trimming. The chips allowed us to successfully demonstrate proximity communication with an asynchronous receiver, and the measurement results show the potential for self-powered operation using biofuel cells. The analysis and experimental verification of the system confirmed their robustness.

YBCO microbolometer operating below Tc - A modelization based on critical current-temperature dependence

NASA Astrophysics Data System (ADS)

Robbes, D.; Langlois, P.; Dolabdjian, C.; Bloyet, D.; Hamet, J. F.; Murray, H.

1993-03-01

Using careful measurements of the I-V curve of a YBCO thin-film microbridge under light irradiation at 780 nm and temperature close to 77 K, it is shown that the critical current versus temperature dependence is a good thermometer for estimating bolometric effects in the film. A novel dynamic voltage bias is introduced which directly gives the device current responsitivity and greatly reduces risks of thermal runaway. Detectivity is very low but it is predicted that a noise equivalent temperature of less than 10 exp -7 K/sq rt Hz would be achievable in a wide temperature range (10-80 K), which is an improvement over thermometry at the resistive transition.

Leakage Current Induced by Energetic Disorder in Organic Bulk Heterojunction Solar Cells: Comprehending the Ultrahigh Loss of Open-Circuit Voltage at Low Temperatures

NASA Astrophysics Data System (ADS)

Yang, Wenchao; Luo, Yongsong; Guo, Pengfei; Sun, Haibin; Yao, Yao

2017-04-01

The open-circuit voltage (Voc ) of organic solar cells generally approaches its maximum obtainable values as the temperature decreases. However, recent experiments have revealed that the Voc may suffer from an ultrahigh loss at low temperatures. In order to verify this explanation and investigate the impacts of energetic disorder on the temperature-dependent behaviors of the Voc in general, we calculate the Voc-T plots with the drift-diffusion method under various device working parameters. With the disorder being incorporated into the device model by considering the disorder-suppressed (temperature-dependent) charge-carrier mobilities, it is found that the ultrahigh Voc losses cannot be reproduced under the Onsager-Braun-type charge generation rate. With the charge generation rate being constant or weakly dependent on temperature, for nonselective contacts, the Voc reduces drastically at low temperatures, while for selective contacts, the Voc increases monotonically with decreasing temperature. With higher carrier mobilities or smaller device thicknesses, the ultrahigh loss occurs at lower temperatures. The mechanism is that, since the disorder-suppressed charge mobilities give rise to both low charge-extraction efficiency and small bimolecular recombination rate, plenty of charge carriers can be extracted from the wrong electrode and can form a large leakage current, which counteracts the majority-carrier current and reduces the Voc at low temperatures. Our results thus highlight the essential role of charge-carrier kinetics, except for the charge-filling effect, on dominating the disorder-induced Voc losses.

Nonequilibrium Second-Order Phase Transition in a Cooper-Pair Insulator.

PubMed

Doron, A; Tamir, I; Mitra, S; Zeltzer, G; Ovadia, M; Shahar, D

2016-02-05

In certain disordered superconductors, upon increasing the magnetic field, superconductivity terminates with a direct transition into an insulating phase. This phase is comprised of localized Cooper pairs and is termed a Cooper-pair insulator. The current-voltage characteristics measured in this insulating phase are highly nonlinear and, at low temperatures, exhibit abrupt current jumps. Increasing the temperature diminishes the jumps until the current-voltage characteristics become continuous. We show that a direct correspondence exists between our system and systems that undergo an equilibrium, second-order, phase transition. We illustrate this correspondence by comparing our results to the van der Waals equation of state for the liquid-gas mixture. We use the similarities to identify a critical point where an out of equilibrium second-order-like phase transition occurs in our system. Approaching the critical point, we find a power-law behavior with critical exponents that characterizes the transition.

Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance

NASA Astrophysics Data System (ADS)

Pham, T. T.; Maréchal, A.; Muret, P.; Eon, D.; Gheeraert, E.; Rouger, N.; Pernot, J.

2018-04-01

Metal oxide semiconductor capacitors were fabricated using p - type oxygen-terminated (001) diamond and Al2O3 deposited by atomic layer deposition at two different temperatures 250 °C and 380 °C. Current voltage I(V), capacitance voltage C(V), and capacitance frequency C(f) measurements were performed and analyzed for frequencies ranging from 1 Hz to 1 MHz and temperatures from 160 K to 360 K. A complete model for the Metal-Oxide-Semiconductor Capacitors electrostatics, leakage current mechanisms through the oxide into the semiconductor and small a.c. signal equivalent circuit of the device is proposed and discussed. Interface states densities are then evaluated in the range of 1012eV-1cm-2 . The strong Fermi level pinning is demonstrated to be induced by the combined effects of the leakage current through the oxide and the presence of diamond/oxide interface states.

Temperature effects on gallium arsenide 63Ni betavoltaic cell.

PubMed

Butera, S; Lioliou, G; Barnett, A M

2017-07-01

A GaAs 63 Ni radioisotope betavoltaic cell is reported over the temperature range 70°C to -20°C. The temperature effects on the key cell parameters were investigated. The saturation current decreased with decreased temperature; whilst the open circuit voltage, the short circuit current, the maximum power and the internal conversion efficiency values decreased with increased temperature. A maximum output power and an internal conversion efficiency of 1.8pW (corresponding to 0.3μW/Ci) and 7% were observed at -20°C, respectively. Copyright © 2017 The Authors. Published by Elsevier Ltd.. All rights reserved.

Performance of differential pair circuits designed with line tunnel FET devices at different temperatures

NASA Astrophysics Data System (ADS)

Martino, M. D. V.; Martino, J. A.; Agopian, P. G. D.; Rooyackers, R.; Simoen, E.; Collaert, N.; Claeys, C.

2018-07-01

This work studies differential pair circuits designed with Line tunnel field effect transistors (TFETs), comparing their suitability with conventional Point TFETs. Differential voltage gain (A d), compliance voltage and sensitivity to channel length mismatch are analyzed experimentally for different temperatures. The first part highlights individual characteristics of Line TFETs, focusing on behaviors that affect analog circuits. In comparison to Point TFETs, Line TFETs present higher drive current, better transconductance and worse output conductance. In the second part, differential pairs are studied at room temperature for different dimensions and bias conditions. Line TFETs present the highest A d, while Point TFET decrease the susceptibility to channel length mismatch. In the last part, the temperature impact is investigated. Based on the activation energy, the impact of band-to-band tunneling and trap-assisted tunneling is discussed for different bias conditions. A general equation is proposed, including the technology and the susceptibility to temperature and dimensions. It was observed that Line TFETs are a good option to design differential pairs with higher A d and ON-state current than Point TFETs.

Nanowire Photonic Systems

DTIC Science & Technology

2009-12-22

b) From top to bottom, (i) AFM topograph of the p-i-n SiNW, (ii) plot of EFM phase-shift vs . position recorded along the nanowire axis and (iii...c) Current vs . applied voltage curve for a typical SiNW p-i-n junction at room temperature. (d) Current vs . applied reverse voltage data of a p-i...incident laser power. Iph vs . laser power (Figure 3c) measured at 22, 20 and 18 V show linear dependences with slopes of 1.16, 0.94 and 0.72 nA/μW

Development and fabrication of a high current, fast recovery power diode

NASA Technical Reports Server (NTRS)

Berman, A. H.; Balodis, V.; Devance, D. C.; Gaugh, C. E.; Karlsson, E. A.

1983-01-01

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Application of Microsecond Voltage Pulses for Water Disinfection by Diaphragm Electric Discharge

NASA Astrophysics Data System (ADS)

Kakaurov, S. V.; Suvorov, I. F.; Yudin, A. S.; Solovyova, T. L.; Kuznetsova, N. S.

2015-11-01

The paper presents the dependence of copper and silver ions formation on the duration of voltage pulses of diaphragm electric discharge and on the pH of treated liquid medium. Knowing it allows one to create an automatic control system to control bactericidal agent's parameters obtained in diaphragm electric discharge reactor. The current-voltage characteristic of the reactor with a horizontal to the diaphragm membrane water flow powered from the author's custom pulse voltage source is also presented. The results of studies of the power consumption of diaphragm electric discharge depending on temperature of the treated liquid medium are given.

Spectral response, dark current, and noise analyses in resonant tunneling quantum dot infrared photodetectors.

PubMed

Jahromi, Hamed Dehdashti; Mahmoodi, Ali; Sheikhi, Mohammad Hossein; Zarifkar, Abbas

2016-10-20

Reduction of dark current at high-temperature operation is a great challenge in conventional quantum dot infrared photodetectors, as the rate of thermal excitations resulting in the dark current increases exponentially with temperature. A resonant tunneling barrier is the best candidate for suppression of dark current, enhancement in signal-to-noise ratio, and selective extraction of different wavelength response. In this paper, we use a physical model developed by the authors recently to design a proper resonant tunneling barrier for quantum infrared photodetectors and to study and analyze the spectral response of these devices. The calculated transmission coefficient of electrons by this model and its dependency on bias voltage are in agreement with experimental results. Furthermore, based on the calculated transmission coefficient, the dark current of a quantum dot infrared photodetector with a resonant tunneling barrier is calculated and compared with the experimental data. The validity of our model is proven through this comparison. Theoretical dark current by our model shows better agreement with the experimental data and is more accurate than the previously developed model. Moreover, noise in the device is calculated. Finally, the effect of different parameters, such as temperature, size of quantum dots, and bias voltage, on the performance of the device is simulated and studied.

Conduction mechanism of leakage current due to the traps in ZrO2 thin film

NASA Astrophysics Data System (ADS)

Seo, Yohan; Lee, Sangyouk; An, Ilsin; Song, Chulgi; Jeong, Heejun

2009-11-01

In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current-voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5-5.0 MV cm-1) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8-1.5 MV cm-1). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV.

Method and apparatus for correcting eddy current signal voltage for temperature effects

DOEpatents

Kustra, Thomas A.; Caffarel, Alfred J.

1990-01-01

An apparatus and method for measuring physical characteristics of an electrically conductive material by the use of eddy-current techniques and compensating measurement errors caused by changes in temperature includes a switching arrangement connected between primary and reference coils of an eddy-current probe which allows the probe to be selectively connected between an eddy current output oscilloscope and a digital ohm-meter for measuring the resistances of the primary and reference coils substantially at the time of eddy current measurement. In this way, changes in resistance due to temperature effects can be completely taken into account in determining the true error in the eddy current measurement. The true error can consequently be converted into an equivalent eddy current measurement correction.

An analysis of the temperature dependence of the gate current in complementary heterojunction field-effect transistors

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Fossum, Eric R.; Baier, Steven M.

1992-01-01

The temperature dependence of the gate current versus the gate voltage in complementary heterojunction field-effect transistors (CHFET's) is examined. An analysis indicates that the gate conduction is due to a combination of thermionic emission, thermionic-field emission, and conduction through a temperature-activated resistance. The thermionic-field emission is consistent with tunneling through the AlGaAs insulator. The activation energy of the resistance is consistent with the ionization energy associated with the DX center in the AlGaAs. Methods reducing the gate current are discussed.

Adaptive amplifier for probe diagnostics of charged-particle temperature in the upper atmosphere

NASA Astrophysics Data System (ADS)

Chkalov, V. G.

An amplifier for probe experiments in the upper atmosphere is described which is based on a linear current-voltage converter design. Specifically, the amplifier is used as the input unit in a rocket-borne ionospheric probe for the measurement of electron temperature. The range of measured currents is from 10 to the -10th to 10 to the -6th A; the amplifier current range can be shifted up or down depending on the requirements of the experiment.

Structural, electrical and photovoltaic properties of CoS/Si heterojunction prepared by spray pyrolysis

NASA Astrophysics Data System (ADS)

El Radaf, I. M.; Nasr, Mahmoud; Mansour, A. M.

2018-01-01

Au/p-CoS/n-Si/Al heterojunction device was fabricated by spray pyrolysis technique. The structural and morphological features were examined by x-ray diffraction, scanning electron microscope and energy dispersive x-ray analysis. The capacitance-voltage characteristics of the prepared heterojunction were analyzed at room temperature in the dark. The current-voltage characteristics were examined under dark and different incident light intensities 20-100 mW cm-2. The rectification ratio, series resistance, shunt resistance, diode ideality factor and the effective barrier height were determined at dark and illumination conditions. The photovoltaic parameters such as short circuit current density, open circuit voltage, fill factor and power conversion efficiency were calculated at different incident light intensities.

30 CFR 7.403 - Application requirements.

Code of Federal Regulations, 2011 CFR

2011-07-01

..., round or flat). (iii) Number and size (gauge) of each conductor. (iv) Voltage rating for all cables containing electric conductors. (v) For electric cables, current-carrying capacity of each conductor, with corresponding ambient temperature upon which the current rating (ampacity) is based, of each power conductor. (2...

Modelling of illuminated current-voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

NASA Astrophysics Data System (ADS)

Gopal, Vishnu; Qiu, WeiCheng; Hu, Weida

2014-11-01

The current-voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation-recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, Iexcess = Ir0 + K1 exp (K2 V), where Ir0, K1, and K2 are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.

Nonequilibrium restoration of duality symmetry in the vicinity of the superconductor-to-insulator transition

NASA Astrophysics Data System (ADS)

Tamir, I.; Doron, A.; Levinson, T.; Gorniaczyk, F.; Tewari, G. C.; Shahar, D.

2017-09-01

The magnetic field driven superconductor-to-insulator transition in thin films is theoretically understood in terms of the notion of vortex-charge duality symmetry. The manifestation of such symmetry is the exchange of roles of current and voltage between the superconductor and the insulator. While experimental evidence obtained from amorphous indium oxide films supported such duality symmetry, it is shown to be broken, counterintuitively, at low temperatures where the insulating phase exhibits discontinuous current-voltage characteristics. Here, we demonstrate that it is possible to effectively restore duality symmetry by driving the system beyond the discontinuity into its high current, far from equilibrium, state.

Calculating electronic tunnel currents in networks of disordered irregularly shaped nanoparticles by mapping networks to arrays of parallel nonlinear resistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aghili Yajadda, Mir Massoud

2014-10-21

We have shown both theoretically and experimentally that tunnel currents in networks of disordered irregularly shaped nanoparticles (NPs) can be calculated by considering the networks as arrays of parallel nonlinear resistors. Each resistor is described by a one-dimensional or a two-dimensional array of equal size nanoparticles that the tunnel junction gaps between nanoparticles in each resistor is assumed to be equal. The number of tunnel junctions between two contact electrodes and the tunnel junction gaps between nanoparticles are found to be functions of Coulomb blockade energies. In addition, the tunnel barriers between nanoparticles were considered to be tilted at highmore » voltages. Furthermore, the role of thermal expansion coefficient of the tunnel junction gaps on the tunnel current is taken into account. The model calculations fit very well to the experimental data of a network of disordered gold nanoparticles, a forest of multi-wall carbon nanotubes, and a network of few-layer graphene nanoplates over a wide temperature range (5-300 K) at low and high DC bias voltages (0.001 mV–50 V). Our investigations indicate, although electron cotunneling in networks of disordered irregularly shaped NPs may occur, non-Arrhenius behavior at low temperatures cannot be described by the cotunneling model due to size distribution in the networks and irregular shape of nanoparticles. Non-Arrhenius behavior of the samples at zero bias voltage limit was attributed to the disorder in the samples. Unlike the electron cotunneling model, we found that the crossover from Arrhenius to non-Arrhenius behavior occurs at two temperatures, one at a high temperature and the other at a low temperature.« less

Photovoltaic array: Power conditioner interface characteristics

NASA Technical Reports Server (NTRS)

Gonzalez, C. C.; Hill, G. M.; Ross, R. G., Jr.

1982-01-01

The electrical output (power, current, and voltage) of flat plate solar arrays changes constantly, due primarily to changes in cell temperature and irradiance level. As a result, array loads such as dc-to-ac power conditioners must be capable of accommodating widely varying input levels while maintaining operation at or near the maximum power point of the array. The array operating characteristics and extreme output limits necessary for the systematic design of array load interfaces under a wide variety of climatic conditions are studied. A number of interface parameters are examined, including optimum operating voltage, voltage energy, maximum power and current limits, and maximum open circuit voltage. The effect of array degradation and I-V curve fill factor or the array power conditioner interface is also discussed. Results are presented as normalized ratios of power conditioner parameters to array parameters, making the results universally applicable to a wide variety of system sizes, sites, and operating modes.

Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

NASA Astrophysics Data System (ADS)

Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

2003-06-01

White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

PERFORMANCE TESTS OF SNAP 10A THERMOELECTRIC ELEMENTS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bergdorf, C.G.

1961-08-30

Apparatus for the performanee testing of SNAP 10A thermoelectric elements was designed, constructed, and is now in operation. Elements may be tested for any desired length of tfme up to 1400 deg F and in a vacuum of 1 x 10/ sup -5/ of Hg. The equipment used for these tcsts may also be utilized for measuring Seebeck coefficient and resistance as a function of temperature. Element performance is derived from the data on voltages and temperatures. The performance variables which are reported in graphic form are as follows: loaded output voltage at any desired DELTA T; open circuit outputmore » voltage at any desired DELTA T; power output under optimum load conditions; current produced under matched load conditions; and internal resistance of the element. (auth)« less

Real-World Physics: A Portable MBL for Field Measurements.

ERIC Educational Resources Information Center

Albergotti, Clifton

1994-01-01

Uses a moderately priced digital multimeter that has output and software compatible with personal computers to make a portable, computer-based data-acquisition system. The system can measure voltage, current, frequency, capacitance, transistor hFE, and temperature. Describes field measures of velocity, acceleration, and temperature as function of…

Sensing Properties of a Novel Temperature Sensor Based on Field Assisted Thermal Emission.

PubMed

Pan, Zhigang; Zhang, Yong; Cheng, Zhenzhen; Tong, Jiaming; Chen, Qiyu; Zhang, Jianpeng; Zhang, Jiaxiang; Li, Xin; Li, Yunjia

2017-02-27

The existing temperature sensors using carbon nanotubes (CNTs) are limited by low sensitivity, complicated processes, or dependence on microscopy to observe the experimental results. Here we report the fabrication and successful testing of an ionization temperature sensor featuring non-self-sustaining discharge. The sharp tips of nanotubes generate high electric fields at relatively low voltages, lowering the work function of electrons emitted by CNTs, and thereby enabling the safe operation of such sensors. Due to the temperature effect on the electron emission of CNTs, the collecting current exhibited an exponential increase with temperature rising from 20 °C to 100 °C. Additionally, a higher temperature coefficient of 0.04 K -1 was obtained at 24 V voltage applied on the extracting electrode, higher than the values of other reported CNT-based temperature sensors. The triple-electrode ionization temperature sensor is easy to fabricate and converts the temperature change directly into an electrical signal. It shows a high temperature coefficient and good application potential.

Sensing Properties of a Novel Temperature Sensor Based on Field Assisted Thermal Emission

PubMed Central

Pan, Zhigang; Zhang, Yong; Cheng, Zhenzhen; Tong, Jiaming; Chen, Qiyu; Zhang, Jianpeng; Zhang, Jiaxiang; Li, Xin; Li, Yunjia

2017-01-01

The existing temperature sensors using carbon nanotubes (CNTs) are limited by low sensitivity, complicated processes, or dependence on microscopy to observe the experimental results. Here we report the fabrication and successful testing of an ionization temperature sensor featuring non-self-sustaining discharge. The sharp tips of nanotubes generate high electric fields at relatively low voltages, lowering the work function of electrons emitted by CNTs, and thereby enabling the safe operation of such sensors. Due to the temperature effect on the electron emission of CNTs, the collecting current exhibited an exponential increase with temperature rising from 20 °C to 100 °C. Additionally, a higher temperature coefficient of 0.04 K−1 was obtained at 24 V voltage applied on the extracting electrode, higher than the values of other reported CNT-based temperature sensors. The triple-electrode ionization temperature sensor is easy to fabricate and converts the temperature change directly into an electrical signal. It shows a high temperature coefficient and good application potential. PMID:28264427

Novel Infrared Phototransistors for Atmospheric CO2 Profiling at 2 microns Wavelength

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Abedin, M. Nurul; Sulima, Oleg V.; Singh, Upendra N.; Ismail, Syed

2004-01-01

Two-micron detectors are critical for atmospheric carbon dioxide profiling using the lidar technique. The characterization results of a novel infrared AlGaAsSb/ InGaAsSb phototransistor are reported. Emitter dark current variation with the collector-emitter voltage at different temperatures is acquired to examine the gain mechanism. Spectral response measurements resulted in responsivity as high as 2650 A/W at 2.05 microns wavelength. Bias voltage and temperature effects on the device responsivity are presented. The detectivity of this device is compared to InGaAs and HgCdTe devices.

Novel Infrared Phototransistors for Atmospheric CO2 Profiling at 2 Micron Wavelength

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Abedin, M. Nurul; Sulima, Oleg V.; Singh, Upendra N.; Ismail, Syed

2004-01-01

Two-micron detectors are critical for atmospheric carbon dioxide profiling using the lidar technique. The characterization results of a novel infrared AlGaAsSb/ InGaAsSb phototransistor are reported. Emitter dark current variation with the collector-emitter voltage at different temperatures is acquired to examine the gain mechanism. Spectral response measurements resulted in responsivity as high as 2650 A/W at 2.05 m wavelength. Bias voltage and temperature effects on the device responsivity are presented. The detectivity of this device is compared to InGaAs and HgCdTe devices.

High-mobility low-temperature ZnO transistors with low-voltage operation

NASA Astrophysics Data System (ADS)

Bong, Hyojin; Lee, Wi Hyoung; Lee, Dong Yun; Kim, Beom Joon; Cho, Jeong Ho; Cho, Kilwon

2010-05-01

Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm2/V s, ON/OFF current ratios were 105, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.

Speckle measurements of density and temperature profiles in a model gas circuit breaker

NASA Astrophysics Data System (ADS)

Stoller, P. C.; Panousis, E.; Carstensen, J.; Doiron, C. B.; Färber, R.

2015-01-01

Speckle imaging was used to measure the density and temperature distribution in the arc zone of a model high voltage circuit breaker during the high current phase and under conditions simulating those present during current-zero crossings (current-zero-like arc); the arc was stabilized by a transonic, axial flow of synthetic air. A single probe beam was used; thus, accurate reconstruction was only possible for axially symmetric gas flows and arc channels. The displacement of speckles with respect to a reference image was converted to a line-of-sight integrated deflection angle, which was in turn converted into an axially symmetric refractive index distribution using a multistep process that made use of the inverse Radon transform. The Gladstone-Dale relation, which gives the index of refraction as a function of density, was extended to high temperatures by taking into account dissociation and ionization processes. The temperature and density were determined uniquely by assuming that the pressure distribution in the case of cold gas flow (in the absence of an arc) is not modified significantly by the arc. The electric conductivity distribution was calculated from the temperature profile and compared to measurements of the arc voltage and to previous results published in the literature for similar experimental conditions.

Small Cold Temperature Instrument Packages

NASA Astrophysics Data System (ADS)

Clark, P. E.; Millar, P. S.; Yeh, P. S.; Feng, S.; Brigham, D.; Beaman, B.

We are developing a small cold temperature instrument package concept that integrates a cold temperature power system with ultra low temperature ultra low power electronics components and power supplies now under development into a 'cold temperature surface operational' version of a planetary surface instrument package. We are already in the process of developing a lower power lower temperature version for an instrument of mutual interest to SMD and ESMD to support the search for volatiles (the mass spectrometer VAPoR, Volatile Analysis by Pyrolysis of Regolith) both as a stand alone instrument and as part of an environmental monitoring package. We build on our previous work to develop strategies for incorporating Ultra Low Temperature/Ultra Low Power (ULT/ULP) electronics, lower voltage power supplies, as well as innovative thermal design concepts for instrument packages. Cryotesting has indicated that our small Si RHBD CMOS chips can deliver >80% of room temperature performance at 40K (nominal minimum lunar surface temperature). We leverage collaborations, past and current, with the JPL battery development program to increase power system efficiency in extreme environments. We harness advances in MOSFET technology that provide lower voltage thresholds for power switching circuits incorporated into our low voltage power supply concept. Conventional power conversion has a lower efficiency. Our low power circuit concept based on 'synchronous rectification' could produce stable voltages as low as 0.6 V with 85% efficiency. Our distributed micro-battery-based power supply concept incorporates cold temperature power supplies operating with a 4 V or 8 V battery. This work will allow us to provide guidelines for applying the low temperature, low power system approaches generically to the widest range of surface instruments.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emery, K.

Evaluate MicroLink cells as a function of temperature and spectral irradiance following the teams' standard procedures. These measurements will include the standard procedures for evaluating multijunction cells including quantum efficiency measurements and current versus voltage measurements.

Giant thermal spin torque assisted magnetic tunnel junction switching

NASA Astrophysics Data System (ADS)

Pushp, Aakash

Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal-spin-torques (TSTs) have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge-currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. Reference: A. Pushp*, T. Phung*, C. Rettner, B. P. Hughes, S.-H. Yang, S. S. P. Parkin, 112, 6585-6590 (2015).

Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

NASA Astrophysics Data System (ADS)

Lee, Hyun-Woo; Cho, Won-Ju

2018-01-01

We investigated the effects of vacuum rapid thermal annealing (RTA) on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs) with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

Electrical Investigation of Nanostructured Fe2O3/p-Si Heterojunction Diode Fabricated Using the Sol-Gel Technique

NASA Astrophysics Data System (ADS)

Mansour, Shehab A.; Ibrahim, Mervat M.

2017-11-01

Iron oxide (α-Fe2O3) nanocrystals have been synthesized via the sol-gel technique. The structural and morphological features of these nanocrystals were studied using x-ray diffraction, Fourier transform-infrared spectroscopy and transmission electron microscopy. Colloidal solution of synthesized α-Fe2O3 (hematite) was spin-coated onto a single-crystal p-type silicon (p-Si) wafer to fabricate a heterojunction diode with Mansourconfiguration Ag/Fe2O3/p-Si/Al. This diode was electrically characterized at room temperature using current-voltage (I-V) characteristics in the voltage range from -9 V to +9 V. The fabricated diode showed a good rectification behavior with a rectification factor 1.115 × 102 at 6 V. The junction parameters such as ideality factor, barrier height, series resistance and shunt resistance are determined using conventional I-V characteristics. For low forward voltage, the conduction mechanism is dominated by the defect-assisted tunneling process with conventional electron-hole recombination. However, at higher voltage, I-V ohmic and space charge-limited current conduction was became less effective with the contribution of the trapped-charge-limited current at the highest voltage range.

Current–voltage characteristics of manganite–titanite perovskite junctions

PubMed Central

Ifland, Benedikt; Peretzki, Patrick; Kressdorf, Birte; Saring, Philipp; Kelling, Andreas; Seibt, Michael

2015-01-01

Summary After a general introduction into the Shockley theory of current voltage (J–V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite–titanate p–n heterojunctions made of n-doped SrTi1− yNbyO3, y = 0.002 and p-doped Pr1− xCaxMnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC) in a thin cross plane lamella of the junction. In the J–V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER) effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron–polaron hole–polaron pair generation and separation at the interface. PMID:26199851

Photovoltaic Properties of Selenized CuGa/In Films with Varied Compositions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muzzillo, Christopher P.; Mansfield, Lorelle M.; Ramanathan, Kannan

2016-11-21

Thin CuGa/In films with varied compositions were deposited by co-evaporation and then selenized in situ with evaporated selenium. The selenized Cu(In, Ga)Se2 absorbers were used to fabricate 390 solar cells. Cu/(Ga+In) and Ga/(Ga+In) (Cu/III and Ga/III) were independently varied, and photovoltaic performance was optimal at Cu/III of 77-92% for all Ga/III compositions studied (Ga/III ~ 30, 50, and 70%). The best absorbers at each Ga/III composition were characterized with time-resolved photoluminescence, scanning electron microscopy, and secondary ion mass spectrometry, and devices were studied with temperature-dependent current density-voltage, light and electrical biased quantum efficiency, and capacitance-voltage. The best cells with Ga/IIImore » ~ 30, 50, and 70% had efficiencies of 14.5, 14.4, and 12.2% and maximum power temperature coefficients of -0.496, -0.452, and -0.413%/degrees C, respectively. This resulted in the Ga/III ~ 50% champion having the highest efficiency at temperatures greater than 40 degrees C, making it the optimal composition for practical purposes. This optimum is understood as a result of the absorber's band gap grading- where minimum band gap dominates short-circuit current density, maximum space charge region band gap dominates open-circuit voltage, and average absorber band gap dominates maximum power temperature coefficient.« less

Observation of dark pulses in 10 nm thick YBCO nanostrips presenting hysteretic current voltage characteristics

NASA Astrophysics Data System (ADS)

Ejrnaes, M.; Parlato, L.; Arpaia, R.; Bauch, T.; Lombardi, F.; Cristiano, R.; Tafuri, F.; Pepe, G. P.

2017-12-01

We have fabricated several 10 nm thick and 65 nm wide YBa2Cu3O7-δ (YBCO) nanostrips. The nanostrips with the highest critical current densities are characterized by hysteretic current voltage characteristics (IVCs) with a direct bistable switch from the zero-voltage to the finite voltage state. The presence of hysteretic IVCs allowed the observation of dark pulses due to fluctuations phenomena. The key role of the bistable behavior is its ability to transform a small disturbance (e.g. an intrinsic fluctuation) into a measurable transient signal, i.e. a dark pulse. On the contrary, in devices characterized by lower critical current density values, the IVCs are non-hysteretic and dark pulses have not been observed. To investigate the physical origin of the dark pulses, we have measured the bias current dependence of the dark pulse rate: the observed exponential increase with the bias current is compatible with mechanisms based on thermal activation of magnetic vortices in the nanostrip. We believe that the successful amplification of small fluctuation events into measurable signals in nanostrips of ultrathin YBCO is a milestone for further investigation of YBCO nanostrips for superconducting nanostrip single photon detectors and other quantum detectors for operation at higher temperatures.

Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

NASA Astrophysics Data System (ADS)

Hsu, M. K.; Chiu, S. Y.; Wu, C. H.; Guo, D. F.; Lour, W. S.

2008-12-01

Pseudomorphic Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors (DH-HEMTs) fabricated with different gate-formation structures of a single-recess gate (SRG), a double-recess gate (DRG) and a field-plate gate (FPG) were comparatively investigated. FPG devices show the best breakdown characteristics among these devices due to great reduction in the peak electric field between the drain and gate electrodes. The measured gate-drain breakdown voltages defined at a 1 mA mm-1 reverse gate-drain current density were -15.3, -19.1 and -26.0 V for SRG, DRG and FPG devices, respectively. No significant differences in their room-temperature common-source current-voltage characteristics were observed. However, FPG devices exhibit threshold voltages being the least sensitive to temperature. Threshold voltages as a function of temperature indicate a threshold-voltage variation as low as -0.97 mV K-1 for FPG devices. According to the 2.4 GHz load-pull power measurement at VDS = 3.0 V and VGS = -0.5 V, the saturated output power (POUT), power gain (GP) and maximum power-added efficiency (PAE) were 10.3 dBm/13.2 dB/36.6%, 11.2 dBm/13.1 dB/39.7% and 13.06 dBm/12.8 dB/47.3%, respectively, for SRG, DRG and FPG devices with a pi-gate in class AB operation. When the FPG device is biased at a VDS of 10 V, the saturated power density is more than 600 mW mm-1.

Lithium-Ion Batteries Being Evaluated for Low-Earth-Orbit Applications

NASA Technical Reports Server (NTRS)

McKissock, Barbara I.

2005-01-01

The performance characteristics and long-term cycle life of aerospace lithium-ion (Li-ion) batteries in low-Earth-orbit applications are being investigated. A statistically designed test using Li-ion cells from various manufacturers began in September 2004 to study the effects of temperature, end-of-charge voltage, and depth-of-discharge operating conditions on the cycle life and performance of these cells. Performance degradation with cycling is being evaluated, and performance characteristics and failure modes are being modeled statistically. As technology improvements are incorporated into aerospace Li-ion cells, these new designs can be added to the test to evaluate the effect of the design changes on performance and life. Cells from Lithion and Saft have achieved over 2000 cycles under 10 different test condition combinations and are being evaluated. Cells from Mine Safety Appliances (MSA) and modules made up of commercial-off-the-shelf 18650 Li-ion cells connected in series/parallel combinations are scheduled to be added in the summer of 2005. The test conditions include temperatures of 10, 20, and 30 C, end-of-charge voltages of 3.85, 3.95, and 4.05 V, and depth-of-discharges from 20 to 40 percent. The low-Earth-orbit regime consists of a 55 min charge, at a constant-current rate that is 110 percent of the current required to fully recharge the cells in 55 min until the charge voltage limit is reached, and then at a constant voltage for the remaining charge time. Cells are discharged for 35 min at the current required for their particular depth-of-discharge condition. Cells are being evaluated in four-cell series strings with charge voltage limits being applied to individual cells by the use of charge-control units designed and produced at the NASA Glenn Research Center. These charge-control units clamp the individual cell voltages as each cell reaches its end-of-charge voltage limit, and they bypass the excess current from that cell, while allowing the full current flow to the remaining cells in the pack. The goal of this evaluation is to identify conditions and cell designs for Li-ion technology that can achieve more than 30,000 low-Earth-orbit cycles. Testing is being performed at the Naval Surface Warfare Center, Crane Division, in Crane, Indiana.

Electro-Thermal Transient Simulation of Silicon Carbide Power Mosfet

DTIC Science & Technology

2013-06-01

ionization rate than electron in silicon carbide , the breakdown voltage almost remains constant even at elevated temperatures . This is due to the positive... temperature coefficient of holes in case of silicon carbide as discussed in [7, 8]. The higher ambient temperature influences the leakage current...in the RLC ring down circuit . E. Power Dissipation and Lattice Temperature The power dissipation for any switching device is dependent on the

Pulsed electromagnetic gas acceleration. [magnetohydrodynamics, plasma power sources and plasma propulsion

NASA Technical Reports Server (NTRS)

Jahn, R. G.; Vonjaskowsky, W. F.; Clark, K. E.

1975-01-01

Terminal voltage measurements with various cathodes and anodes in a high power, quasi-steady magnetoplasmadynamic (MPD) are discussed. The magnitude of the current at the onset of voltage fluctuations is shown to be an increasing function of cathode area and a weaker decreasing function of anode area. Tests with a fluted cathode indicated that the fluctuations originate in the plasma adjacent to the cathode rather than at the cathode surface. Measurements of radiative output from an optical cavity aligned to examine the current-carrying portion of a two-dimensional, 56 kA magnetoplasmadynamic discharge reveal no lasing in that region, consistent with calculations of electron excitation and resonance radiation trapping. A voltage-swept double probe technique allows single-shot determination of electron temperature and electron number density in the recombining MPD exhaust flow. Current distributions within the cavity of MPD hollow cathodes for various static prefills with no injected mass flow are examined.

High-Current-Density Thermionic Cathodes and the Generation of High-Voltage Electron Beams

DTIC Science & Technology

1989-04-30

Cathode Temperature =1700 OC Figure 37: Peak gun voltage = 90 kV -57- 60- 0 EGUN 327 ~40 0S 20’ Vacuum 5 .2 x 10 Tor 0 o 0 15202 30 Time (jis...by modeling the filament as a thin disk. The shape of the H - V -, 2 actual filament is sketched in Fig. 2. The EGUN code 1 131 is used to calculate

Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics

NASA Astrophysics Data System (ADS)

Basile, A. F.; Cramer, T.; Kyndiah, A.; Biscarini, F.; Fraboni, B.

2014-06-01

Metal-oxide-semiconductor (MOS) transistors fabricated with pentacene thin films were characterized by temperature-dependent current-voltage (I-V) characteristics, time-dependent current measurements, and admittance spectroscopy. The channel mobility shows almost linear variation with temperature, suggesting that only shallow traps are present in the semiconductor and at the oxide/semiconductor interface. The admittance spectra feature a broad peak, which can be modeled as the sum of a continuous distribution of relaxation times. The activation energy of this peak is comparable to the polaron binding energy in pentacene. The absence of trap signals in the admittance spectra confirmed that both the semiconductor and the oxide/semiconductor interface have negligible density of deep traps, likely owing to the passivation of SiO2 before pentacene growth. Nevertheless, current instabilities were observed in time-dependent current measurements following the application of gate-voltage pulses. The corresponding activation energy matches the energy of a hole trap in SiO2. We show that hole trapping in the oxide can explain both the temperature and the time dependences of the current instabilities observed in pentacene MOS transistors. The combination of these experimental techniques allows us to derive a comprehensive model for charge transport in hybrid architectures where trapping processes occur at various time and length scales.

Design and Development of a Series Switch for High Voltage in RF Heating

NASA Astrophysics Data System (ADS)

Patel, Himanshu K.; Shah, Deep; Thacker, Mauli; Shah, Atman

2013-02-01

Plasma is the fourth state of matter. To sustain plasma in its ionic form very high temperature is essential. RF heating systems are used to provide the required temperature. Arching phenomenon in these systems can cause enormous damage to the RF tube. Heavy current flows across the anode-cathode junction, which need to be suppressed in minimal time for its protection. Fast-switching circuit breakers are used to cut-off the load from the supply in cases of arching. The crowbar interrupts the connection between the high voltage power supply (HVPS) and the RF tube for a temporary period between which the series switch has to open. The crowbar shunts the current across the load but in the process leads to short circuiting the HVPS. Thus, to protect the load as well as the HVPS a series switch is necessary. This paper presents the design and development of high voltage Series Switch for the high power switching applications. Fiber optic based Optimum triggering scheme is designed and tested to restrict the time delay well within the stipulated limits. The design is well supported with the experimental results for the whole set-up along with the series switch at various voltage level before its approval for operation at 5.2 kV.

The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

NASA Astrophysics Data System (ADS)

Hashemi, Adeleh; Bahari, Ali; Ghasemi, Shahram

2017-09-01

In this work, povidone/silica nanocomposite dielectric layers were deposited on the n-type Si (100) substrates for application in n-type silicon field-effect transistors (FET). Thermogravimetric analysis (TGA) indicated that strong chemical interactions between polymer and silica nanoparticles were created. In order to examine the effect of annealing temperatures on chemical interactions and nanostructure properties, annealing process was done at 423-513 K. Atomic force microscopy (AFM) images show the very smooth surfaces with very low surface roughness (0.038-0.088 nm). The Si2p and C1s core level photoemission spectra were deconvoluted to the chemical environments of Si and C atoms respectively. The obtained results of deconvoluted X-ray photoelectron spectroscopy (XPS) spectra revealed a high percentage of silanol hydrogen bonds in the sample which was not annealed. These bonds were inversed to stronger covalence bonds (siloxan bonds) at annealing temperature of 423 K. By further addition of temperature, siloxan bonds were shifted to lower binding energy of about 1 eV and their intensity were abated at annealing temperature of 513 K. The electrical characteristics were extracted from current-Voltage (I-V) and capacitance-voltage (C-V) measurements in metal-insulator-semiconductor (MIS) structure. The all n-type Si transistors showed very low threshold voltages (-0.24 to 1 V). The formation of the strongest cross-linking at nanostructure of dielectric film annealed at 423 K caused resulted in an un-trapped path for the transport of charge carriers yielding the lowest threshold voltage (0.08 V) and the highest electron mobility (45.01 cm2/V s) for its FET. By increasing the annealing temperature (473 and 513 K) on the nanocomposite dielectric films, the values of the average surface roughness, the capacitance and the FET threshold voltage increased and the value of FET electron field-effect mobility decreased.

Modularized multilevel and z-source power converter as renewable energy interface for vehicle and grid-connected applications

NASA Astrophysics Data System (ADS)

Cao, Dong

Due the energy crisis and increased oil price, renewable energy sources such as photovoltaic panel, wind turbine, or thermoelectric generation module, are used more and more widely for vehicle and grid-connected applications. However, the output of these renewable energy sources varies according to different solar radiation, wind speed, or temperature difference, a power converter interface is required for the vehicle or grid-connected applications. Thermoelectric generation (TEG) module as a renewable energy source for automotive industry is becoming very popular recently. Because of the inherent characteristics of TEG modules, a low input voltage, high input current and high voltage gain dc-dc converters are needed for the automotive load. Traditional high voltage gain dc-dc converters are not suitable for automotive application in terms of size and high temperature operation. Switched-capacitor dc-dc converters have to be used for this application. However, high voltage spike and EMI problems exist in traditional switched-capacitor dc-dc converters. Huge capacitor banks have to be utilized to reduce the voltage ripple and achieve high efficiency. A series of zero current switching (ZCS) or zero voltage switching switched-capacitor dc-dc converters have been proposed to overcome the aforementioned problems of the traditional switched-capacitor dc-dc converters. By using the proposed soft-switching strategy, high voltage spike is reduced, high EMI noise is restricted, and the huge capacitor bank is eliminated. High efficiency, high power density and high temperature switched-capacitor dc-dc converters could be made for the TEG interface in vehicle applications. Several prototypes have been made to validate the proposed circuit and confirm the circuit operation. In order to apply PV panel for grid-connected application, a low cost dc-ac inverter interface is required. From the use of transformer and safety concern, two different solutions can be implemented, non-isolated or isolated PV inverter. For the non-isolated transformer-less solution, a semi-Z-source inverter for single phase photovoltaic systems has been proposed. The proposed semi-Z-source inverter utilizes only two switching devices with doubly grounded feature. The total cost have been reduced, the safety and EMI issues caused by the high frequency ground current are solved. For the transformer isolated solution, a boost half-bridge dc-ac micro-inverter has been proposed. The proposed boost half-bridge dc-dc converter utilizes only two switching devices with zero voltage switching features which is able to reduce the total system cost and power loss.

Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

PubMed

Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

2015-01-14

The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

Study of temperature, air dew point temperature and reactant flow effects on proton exchange membrane fuel cell performances using electrochemical spectroscopy and voltammetry techniques

NASA Astrophysics Data System (ADS)

Wasterlain, S.; Candusso, D.; Hissel, D.; Harel, F.; Bergman, P.; Menard, P.; Anwar, M.

A single PEMFC has been operated by varying the assembly temperature, the air dew point temperature and the anode/cathode stoichiometry rates with the aim to identify the parameters and combinations of factors affecting the cell performance. Some of the experiments were conducted with low humidified reactants (relative humidity of 12%). The FC characterizations tests have been conducted using in situ electrochemical methods based on load current and cell voltage signal analysis, namely: polarization curves, EIS measurements, cyclic and linear sweep voltammetries (CV and LSV). The impacts of the parameters on the global FC performances were observed using the polarization curves whereas EIS, CV and LSV test results were used to discriminate the different voltage loss sources. The test results suggest that some parameter sets allow maximal output voltages but can also induce material degradation. For instance, higher FC temperature and air flow values can induce significant electrical efficiency benefits, notably by increasing the reversible potential and the reaction kinetics. However, raising the cell temperature can also gradually dry the FC and increase the risk of membrane failure. LSV has also shown that elevated FC temperature and relative humidity can also accelerate the electrolyte degradation (i.e. slightly higher fuel crossover rate) and reduce the lifetime consequently.

Simulation of temperature field for temperature-controlled radio frequency ablation using a hyperbolic bioheat equation and temperature-varied voltage calibration: a liver-mimicking phantom study.

PubMed

Zhang, Man; Zhou, Zhuhuang; Wu, Shuicai; Lin, Lan; Gao, Hongjian; Feng, Yusheng

2015-12-21

This study aims at improving the accuracy of temperature simulation for temperature-controlled radio frequency ablation (RFA). We proposed a new voltage-calibration method in the simulation and investigated the feasibility of a hyperbolic bioheat equation (HBE) in the RFA simulation with longer durations and higher power. A total of 40 RFA experiments was conducted in a liver-mimicking phantom. Four mathematical models with multipolar electrodes were developed by the finite element method in COMSOL software: HBE with/without voltage calibration, and the Pennes bioheat equation (PBE) with/without voltage calibration. The temperature-varied voltage calibration used in the simulation was calculated from an experimental power output and temperature-dependent resistance of liver tissue. We employed the HBE in simulation by considering the delay time τ of 16 s. First, for simulations by each kind of bioheat equation (PBE or HBE), we compared the differences between the temperature-varied voltage-calibration and the fixed-voltage values used in the simulations. Then, the comparisons were conducted between the PBE and the HBE in the simulations with temperature-varied voltage calibration. We verified the simulation results by experimental temperature measurements on nine specific points of the tissue phantom. The results showed that: (1) the proposed voltage-calibration method improved the simulation accuracy of temperature-controlled RFA for both the PBE and the HBE, and (2) for temperature-controlled RFA simulation with the temperature-varied voltage calibration, the HBE method was 0.55 °C more accurate than the PBE method. The proposed temperature-varied voltage calibration may be useful in temperature field simulations of temperature-controlled RFA. Besides, the HBE may be used as an alternative in the simulation of long-duration high-power RFA.

Very Low Frequency Breakdown Properties of Electrical Insulation Materials at Cryogenic Temperatures

NASA Astrophysics Data System (ADS)

Sauers, I.; Tuncer, E.; Polizos, G.; James, D. R.; Ellis, A. R.; Pace, M. O.

2010-04-01

For long cables or equipment with large capacitance it is not always possible to conduct high voltage withstand tests at 60 Hz due to limitations in charging currents of the power supply. Very low frequency (typically at a frequency of 0.1 Hz) has been used for conventional cables as a way of getting around the charging current limitation. For superconducting grid applications the same issues apply. However there is very little data at cryogenic temperatures on how materials perform at low frequency compared to 60 Hz and whether higher voltages should be applied when performing a high voltage acceptability test. Various materials including G10 (fiberglass reinforced plastic or FRP), Cryoflex™ (a tape insulation used in some high temperature superconducting cables), kapton (commonly used polyimide), polycarbonate, and polyetherimide, and in liquid nitrogen alone have been tested using a step method for frequencies of 60 Hz, 0.1 Hz, and dc. The dwell time at each step was chosen so that the aging factor would be the same in both the 60 Hz and 0.1 Hz tests. The data indicated that, while there is a small frequency dependence for liquid nitrogen, there are significant differences for the solid materials studied. Breakdown data for these materials and for model cables will be shown and discussed.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel

2016-01-14

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current inmore » doped Ge{sub 2}Sb{sub 2}Te{sub 5} nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.« less

Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring.

PubMed

Malits, Maria; Brouk, Igor; Nemirovsky, Yael

2018-05-19

This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage ( V t ) can be used to accurately measure the chip local temperature by using a V t extractor circuit. Furthermore, the circuit's performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the V t extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 µm partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of ±1.5 K across 300 K⁻500 K temperature range while consuming only 30 µW during operation.

New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

NASA Astrophysics Data System (ADS)

Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M. V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M.

2018-06-01

This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual ID-VDS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage VTH and low supply voltage VDD.

Dynamic Scattering Mode LCDs

NASA Astrophysics Data System (ADS)

Bahadur, Birendra

The following sections are included: * INTRODUCTION * CELL DESIGNING * EXPERIMENTAL OBSERVATIONS IN NEMATICS RELATED WITH DYNAMIC SCATTERING * Experimental Observations at D.C. Field and Electrode Effects * Experimental Observation at Low Frequency A.C. Fields * Homogeneously Aligned Nematic Regime * Williams Domains * Dynamic Scattering * Experimental Observation at High Frequency A.C. Field * Other Experimental Observations * THEORETICAL INTERPRETATIONS * Felici Model * Carr-Helfrich Model * D.C. Excitation * Dubois-Violette, de Gennes and Parodi Model * Low Freqency or Conductive Regime * High Frequency or Dielectric Regime * DYNAMIC SCATTERING IN SMECRIC A PHASE * ELECTRO-OPTICAL CHARACTERISTICS AND LIMITATIONS * Contrast Ratio vs. Voltage, Viewing Angle, Cell Gap, Wavelength and Temperature * Display Current vs. Voltage, Cell Gap and Temperature * Switching Time * Effect of Alignment * Effect of Conductivity, Temperature and Frequency * Addressing of DSM LCDs * Limitations of DSM LCDs * ACKNOWLEDGEMENTS * REFERENCES

Radionuclide calorimeter system

DOEpatents

Donohoue, Thomas P.; Oertel, Christopher P.; Tyree, William H.; Valdez, Joe L.

1991-11-26

A circuit for measuring temperature differentials in a calorimeter is disclosed. The temperature differential between the reference element and sample element containing a radioactive material is measured via a wheatstone bridge arrangement of thermistors. The bridge is driven with an alternating current on a pulsed basis to maintain the thermal floor of the calorimeter at a low reference value. A lock-in amplifier connected to the bridge phase locks a signal from the bridge to the input pulsed AC signal to provide a DC voltage. The DC voltage is sampled over time and provided to a digital computer. The digital computer, using curve fitting algorithms, will derive a function for the sample data. From the function, an equilibrium value for the temperature may be calculated.

Radionuclide calorimeter system

DOEpatents

Donohoue, T.P.; Oertel, C.P.; Tyree, W.H.; Valdez, J.L.

1991-11-26

A circuit for measuring temperature differentials in a calorimeter is disclosed. The temperature differential between the reference element and sample element containing a radioactive material is measured via a Wheatstone bridge arrangement of thermistors. The bridge is driven with an alternating current on a pulsed basis to maintain the thermal floor of the calorimeter at a low reference value. A lock-in amplifier connected to the bridge phase locks a signal from the bridge to the input pulsed AC signal to provide a DC voltage. The DC voltage is sampled over time and provided to a digital computer. The digital computer, using curve fitting algorithms, will derive a function for the sample data. From the function, an equilibrium value for the temperature may be calculated. 7 figures.

Voltage-induced switching dynamics based on an AZO/VO2/AZO sandwiched structure

NASA Astrophysics Data System (ADS)

Xiao, Han; Li, Yi; Fang, Baoying; Wang, Xiaohua; Liu, Zhimin; Zhang, Jiao; Li, Zhengpeng; Huang, Yaqin; Pei, Jiangheng

2017-11-01

A vanadium dioxide (VO2) thin film was prepared on an Al-doped ZnO (AZO) conductive glass substrate by DC magnetron sputtering and a post-annealing process. The AZO/VO2/AZO sandwiched structure was fabricated on the VO2/AZO composite film using photolithography and a chemical etching process. The composition, microstructure and optical properties of the VO2/AZO composite film were tested. The results showed that the VO2/AZO composite film was poly-crystalline and the AZO layer did not change the preferred growth orientation of VO2. When the voltage was applied on both of the transparent conductive layers of the AZO/VO2/AZO sandwiched structure, an abrupt change in the current was observed at different temperatures. The temperature dependence of I-V characteristic curves for the AZO/VO2/AZO sandwiched structure was analyzed. The phase transition voltage value is 7.5 V at 20 °C and decreases with increasing temperature.

Enhanced Photocurrent in BiFeO3 Materials by Coupling Temperature and Thermo-Phototronic Effects for Self-Powered Ultraviolet Photodetector System.

PubMed

Qi, Jia; Ma, Nan; Ma, Xiaochen; Adelung, Rainer; Yang, Ya

2018-04-25

Ferroelectric materials can be utilized for fabricating photodetectors because of the photovoltaic effect. Enhancing the photovoltaic performance of ferroelectric materials is still a challenge. Here, a self-powered ultraviolet (UV) photodetector is designed based on the ferroelectric BiFeO 3 (BFO) material, exhibiting a high current/voltage response to 365 nm light in heating/cooling states. The photovoltaic performance of the BFO-based device can be well modulated by applying different temperature variations, where the output current and voltage can be enhanced by 60 and 75% in heating and cooling states, respectively. The enhancement mechanism of the photocurrent is associated with both temperature effect and thermo-phototronic effect in the photovoltaic process. Moreover, a 4 × 4 matrix photodetector array has been designed for detecting the 365 nm light distribution in the cooling state by utilizing photovoltage signals. This study clarifies the role of the temperature effect and the thermo-phototronic effect in the photovoltaic process of the BFO material and provides a feasible route for pushing forward practical applications of self-powered UV photodetectors.

Monitoring apparatus and method for battery power supply

DOEpatents

Martin, Harry L.; Goodson, Raymond E.

1983-01-01

A monitoring apparatus and method are disclosed for monitoring and/or indicating energy that a battery power source has then remaining and/or can deliver for utilization purposes as, for example, to an electric vehicle. A battery mathematical model forms the basis for monitoring with a capacity prediction determined from measurement of the discharge current rate and stored battery parameters. The predicted capacity is used to provide a state-of-charge indication. Self-calibration over the life of the battery power supply is enacted through use of a feedback voltage based upon the difference between predicted and measured voltages to correct the battery mathematical model. Through use of a microprocessor with central information storage of temperature, current and voltage, system behavior is monitored, and system flexibility is enhanced.

Thermoelectric current in topological insulator nanowires with impurities.

PubMed

Erlingsson, Sigurdur I; Bardarson, Jens H; Manolescu, Andrei

2018-01-01

In this paper we consider charge current generated by maintaining a temperature difference over a nanowire at zero voltage bias. For topological insulator nanowires in a perpendicular magnetic field the current can change sign as the temperature of one end is increased. Here we study how this thermoelectric current sign reversal depends on the magnetic field and how impurities affect the size of the thermoelectric current. We consider both scalar and magnetic impurities and show that their influence on the current are quite similar, although the magnetic impurities seem to be more effective in reducing the effect. For moderate impurity concentration the sign reversal persists.

Investigation and optimization of low-frequency noise performance in readout electronics of dc superconducting quantum interference device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Jing; Peter Grünberg Institute; Zhang, Yi

2014-05-15

We investigated and optimized the low-frequency noise characteristics of a preamplifier used for readout of direct current superconducting quantum interference devices (SQUIDs). When the SQUID output was detected directly using a room-temperature low-voltage-noise preamplifier, the low-frequency noise of a SQUID system was found to be dominated by the input current noise of the preamplifiers in case of a large dynamic resistance of the SQUID. To reduce the current noise of the preamplifier in the low-frequency range, we investigated the dependence of total preamplifier noise on the collector current and source resistance. When the collector current was decreased from 8.4 mAmore » to 3 mA in the preamplifier made of 3 parallel SSM2220 transistor pairs, the low-frequency total voltage noise of the preamplifier (at 0.1 Hz) decreased by about 3 times for a source resistance of 30 Ω whereas the white noise level remained nearly unchanged. Since the relative contribution of preamplifier's input voltage and current noise is different depending on the dynamic resistance or flux-to-voltage transfer of the SQUID, the results showed that the total noise of a SQUID system at low-frequency range can be improved significantly by optimizing the preamplifier circuit parameters, mainly the collector current in case of low-noise bipolar transistor pairs.« less

Investigation and optimization of low-frequency noise performance in readout electronics of dc superconducting quantum interference device

NASA Astrophysics Data System (ADS)

Zhao, Jing; Zhang, Yi; Lee, Yong-Ho; Krause, Hans-Joachim

2014-05-01

We investigated and optimized the low-frequency noise characteristics of a preamplifier used for readout of direct current superconducting quantum interference devices (SQUIDs). When the SQUID output was detected directly using a room-temperature low-voltage-noise preamplifier, the low-frequency noise of a SQUID system was found to be dominated by the input current noise of the preamplifiers in case of a large dynamic resistance of the SQUID. To reduce the current noise of the preamplifier in the low-frequency range, we investigated the dependence of total preamplifier noise on the collector current and source resistance. When the collector current was decreased from 8.4 mA to 3 mA in the preamplifier made of 3 parallel SSM2220 transistor pairs, the low-frequency total voltage noise of the preamplifier (at 0.1 Hz) decreased by about 3 times for a source resistance of 30 Ω whereas the white noise level remained nearly unchanged. Since the relative contribution of preamplifier's input voltage and current noise is different depending on the dynamic resistance or flux-to-voltage transfer of the SQUID, the results showed that the total noise of a SQUID system at low-frequency range can be improved significantly by optimizing the preamplifier circuit parameters, mainly the collector current in case of low-noise bipolar transistor pairs.

High-temperature, high-power-density thermionic energy conversion for space

NASA Technical Reports Server (NTRS)

Morris, J. F.

1977-01-01

Theoretic converter outputs and efficiencies indicate the need to consider thermionic energy conversion (TEC) with greater power densities and higher temperatures within reasonable limits for space missions. Converter-output power density, voltage, and efficiency as functions of current density were determined for 1400-to-2000 K emitters with 725-to-1000 K collectors. The results encourage utilization of TEC with hotter-than-1650 K emitters and greater-than-6W sq cm outputs to attain better efficiencies, greater voltages, and higher waste-heat-rejection temperatures for multihundred-kilowatt space-power applications. For example, 1800 K, 30 A sq cm TEC operation for NEP compared with the 1650 K, 5 A/sq cm case should allow much lower radiation weights, substantially fewer and/or smaller emitter heat pipes, significantly reduced reactor and shield-related weights, many fewer converters and associated current-collecting bus bars, less power conditioning, and lower transmission losses. Integration of these effects should yield considerably reduced NEP specific weights.

Fluctuation conductance and the Berezinskii-Kosterlitz-Thouless transition in two dimensional epitaxial NbTiN ultra-thin films

NASA Astrophysics Data System (ADS)

K, Makise; H, Terai; T, Yamashita; S, Miki; Z, Wang; Uzawa Y, Y.; S, Ezaki; T, Odou; B, Shinozaki

2012-12-01

We study on the electric transport properties of epitaxial NbTiN ultrathin films in a range from 2 to 8nm. The films with 4 nm thick shows superconductivity of which mean-field superconducting transition temperature is TC0 = 9.43 K The excess conductance due to superconducting fluctuations was measured at temperatures above TC0. The paraconductivity shows a two-dimensional like behaviour at close to TC0. Experimental results are in good agreement with the sum of Aslamazov - Larkin and Maki - Thompson term for superconducting fluctuation theory. Decreasing temperature below TC0, the current-voltage characteristic shows a crossover from linear to nonlinear behaviour. The exponent α of current-voltage relation, V ~ Iα showed universal jump at TCBKT = 9.33 K As results, we find that there is a consistency between the parametrization of the2D characteristics of fluctuation paraconductivity above TC0 and Berezinskii-Kosterlitz-Thouless type behaviour below TC0.

Hybrid pulse anodization for the fabrication of porous anodic alumina films from commercial purity (99%) aluminum at room temperature.

PubMed

Chung, C K; Zhou, R X; Liu, T Y; Chang, W T

2009-02-04

Most porous anodic alumina (PAA) or anodic aluminum oxide (AAO) films are fabricated using the potentiostatic method from high-purity (99.999%) aluminum films at a low temperature of approximately 0-10 degrees C to avoid dissolution effects at room temperature (RT). In this study, we have demonstrated the fabrication of PAA film from commercial purity (99%) aluminum at RT using a hybrid pulse technique which combines pulse reverse and pulse voltages for the two-step anodization. The reaction mechanism is investigated by the real-time monitoring of current. A possible mechanism of hybrid pulse anodization is proposed for the formation of pronounced nanoporous film at RT. The structure and morphology of the anodic films were greatly influenced by the duration of anodization and the type of voltage. The best result was obtained by first applying pulse reverse voltage and then pulse voltage. The first pulse reverse anodization step was used to form new small cells and pre-texture concave aluminum as a self-assembled mask while the second pulse anodization step was for the resulting PAA film. The diameter of the nanopores in the arrays could reach 30-60 nm.

Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Holonyak, N.; Wang, C. Y.

2017-09-01

Optical bistable devices are fundamental to digital photonics as building blocks of switches, logic gates, and memories in future computer systems. Here, we demonstrate both optical and electrical bistability and capability for switching in a single transistor operated at room temperature. The electro-optical hysteresis is explained by the interaction of electron-hole (e-h) generation and recombination dynamics with the cavity photon modulation in different switching paths. The switch-UP and switch-DOWN threshold voltages are determined by the rate difference of photon generation at the base quantum-well and the photon absorption via intra-cavity photon-assisted tunneling controlled by the collector voltage. Thus, the transistor laser electro-optical bistable switching is programmable with base current and collector voltage, and the basis for high speed optical logic processors.

The effect of segmented anodes on the performance and plume of a Hall thruster

NASA Astrophysics Data System (ADS)

Kieckhafer, Alexander W.

Development of alternative propellants for Hall thruster operation is an active area of research. Xenon is the current propellant of choice for Hall thrusters, but can be costly in large thrusters and for extended test periods. Condensible propellants may offer an alternative to xenon, as they will not require costly active pumping to remove from a test facility, and may be less expensive to purchase. A method has been developed which uses segmented electrodes in the discharge channel of a Hall thruster to divert discharge current to and from the main anode and thus control the anode temperature. By placing a propellant reservoir in the anode, the evaporation rate, and hence, mass flow of propellant can be controlled. Segmented electrodes for thermal control of a Hall thruster represent a unique strategy of thruster design, and thus the performance of the thruster must be measured to determine the effect the electrodes have on the thruster. Furthermore, the source of any changes in thruster performance due to the adjustment of discharge current between the shims and the main anode must be characterized. A Hall thruster was designed and constructed with segmented electrodes. It was then tested at anode voltages between 300 and 400 V and mass flows between 4 and 6 mg/s, as well as 100%, 75%, 50%, 25%, and <5% of the discharge current on the shim electrodes. The level of current on the shims was adjusted by changing the shim voltage. At each operating point, the thruster performance, plume divergence, ion energy, and multiply charged ion fraction were measured. Thruster performance exhibited a small change with the level of discharge current on the shim electrodes. Thrust and specific impulse increased by as much as 6% and 7.7%, respectively, as discharge current was shifted from the main anode to the shims at constant anode voltage. Thruster efficiency did not change. Plume divergence was reduced by approximately 4 degrees of half-angle at high levels of current on the shims and at all combinations of mass flow and anode voltage. The fraction of singly charged xenon in the thruster plume varied between approximately 80% and 95% as the anode voltage and mass flow were changed, but did not show a significant change with shim current. Doubly and triply charged xenon made up the remainder of the ions detected. Ion energy exhibited a mixed behavior. The highest voltage present in the thruster largely dictated the most probable energy; either shim or anode voltage, depending on which was higher. The overall change in most probable ion energy was 20-30 eV, the majority of which took place while the shim voltage was higher than the anode voltage. The thrust, specific impulse, plume divergence, and ion energy all indicate that the thruster is capable of a higher performance output at high levels of discharge current on the shims. The lack of a change in efficiency and fraction of multiply charged ions indicate that the thruster can be operated at any level of current on the shims without detrimental effect, and thus a condensible propellant thruster can control the anode temperature without a decrease in efficiency or a change in the multiply charged ion fraction.

Temperature effect on betavoltaic microbatteries based on Si and GaAs under 63Ni and 147Pm irradiation

NASA Astrophysics Data System (ADS)

Wang, Hao; Tang, Xiao-bin; Liu, Yun-Peng; Xu, Zhi-Heng; Liu, Min; Chen, Da

2015-09-01

The effect of temperature on the output performance of four different types of betavoltaic microbatteries was investigated experimental and theoretical. Si and GaAs were selected as the energy conversion devices in four types of betavoltaic microbatteries, and 63Ni and 147Pm were used as beta sources. Current density-voltage curves were determined at a temperature range of 213.15-333.15 K. A simplified method was used to calculate the theoretical parameters of the betavoltaic microbatteries considering the energy loss of beta particles for self-absorption of radioactive source, the electron backscatter effect of different types of semiconductor materials, and the absorption of dead layer. Both the experimental and theoretical results show that the short-circuit current density increases slightly and the open-circuit voltage (VOC) decreases evidently with the increase in temperature. Different combinations of energy conversion devices and beta sources cause different effects of temperature on the microbatteries. In the approximately linear range, the VOC sensitivities caused by temperature for 63Ni-Si, 63Ni-GaAs, 147Pm-Si, and 147Pm-GaAs betavoltaic microbatteries were -2.57, -5.30, -2.53, and -4.90 mV/K respectively. Both theoretical and experimental energy conversion efficiency decreased evidently with the increase in temperature.

Temperature Dependent Electron Transport Properties of Gold Nanoparticles and Composites: Scanning Tunneling Spectroscopy Investigations.

PubMed

Patil, Sumati; Datar, Suwarna; Dharmadhikari, C V

2018-03-01

Scanning tunneling spectroscopy (STS) is used for investigating variations in electronic properties of gold nanoparticles (AuNPs) and its composite with urethane-methacrylate comb polymer (UMCP) as function of temperature. Films are prepared by drop casting AuNPs and UMCP in desired manner on silicon substrates. Samples are further analyzed for morphology under scanning electron microscopy (SEM) and atomic force microscopy (AFM). STS measurements performed in temperature range of 33 °C to 142 °C show systematic variation in current versus voltage (I-V) curves, exhibiting semiconducting to metallic transition/Schottky behavior for different samples, depending upon preparation method and as function of temperature. During current versus time (I-t) measurement for AuNPs, random telegraphic noise is observed at room temperature. Random switching of tunneling current between two discrete levels is observed for this sample. Power spectra derived from I-t show 1/f2 dependence. Statistical analysis of fluctuations shows exponential behavior with time width τ ≈ 7 ms. Local density of states (LDOS) plots derived from I-V curves of each sample show systematic shift in valance/conduction band edge towards/away from Fermi level, with respect to increase in temperature. Schottky emission is best fitted electron emission mechanism for all samples over certain range of bias voltage. Schottky plots are used to calculate barrier heights and temperature dependent measurements helped in measuring activation energies for electron transport in all samples.

An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Li, Kexin; Rakheja, Shaloo

2018-05-01

We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

Ionic currents and charge movements in organ-cultured rat skeletal muscle.

PubMed

Hollingworth, S; Marshall, M W; Robson, E

1984-12-01

The middle of the fibre voltage-clamp technique was used to measure ionic currents and non-linear charge movements in intact, organ-cultured (in vitro denervated) mammalian fast-twitch (rat extensor digitorum longus) muscle fibres. Muscle fibres organ cultured for 4 days can be used as electrophysiological and morphological models for muscles in vivo denervated for the same length of time. Sodium currents in organ-cultured muscle fibres are similar to innervated fibres except that in the temperature range 0-20 degrees C (a) in the steady state, the voltage distribution of inactivation in cultured fibres is shifted negatively some 20 mV; (b) at the same temperature and membrane potential, the time constant of inactivation in cultured fibres is about twice that of innervated fibres. Potassium currents in innervated and cultured fibres at 15 degrees C can be fitted with the Hodgkin-Huxley n variable raised to the second power. Despite the large range we would estimate that the maximum value of the steady-state potassium conductance of cultured fibres is about one-half that of innervated fibres. The estimated maximum amount of charge moved in cultured fibre is about one-third that in innervated fibres. Compared to innervated fibres, culturing doubles the kinetics of the decay phase of charge movement. The possibility of a negative shift of the voltage distribution of charge movements in cultured fibres is discussed.

Nonlinear distortion analysis for single heterojunction GaAs HEMT with frequency and temperature

NASA Astrophysics Data System (ADS)

Alim, Mohammad A.; Ali, Mayahsa M.; Rezazadeh, Ali A.

2018-07-01

Nonlinearity analysis using two-tone intermodulation distortion (IMD) technique for 0.5 μm gate-length AlGaAs/GaAs based high electron mobility transistor have been investigated based on biasing conditions, input power, frequency and temperature. The outcomes indicate a significant modification on the output IMD power and as well as the minimum distortion level. The input IMD power effects the output current and subsequently the threshold voltage reduces, resulting to an increment in the output IMD power. Both frequency and temperature reduces the magnitude of the output IMDs. In addition, the threshold voltage response with temperature alters the notch point of the nonlinear output IMD’s accordingly. The aforementioned investigation will help the circuit designers to evaluate the best biasing option in terms of minimum distortion, maximum gain for future design optimizations.

Domain switching kinetics in ferroelectric-resistive BiFeO3 thin film memories

NASA Astrophysics Data System (ADS)

Meng, Jianwei; Jiang, Jun; Geng, Wenping; Chen, Zhihui; Zhang, Wei; Jiang, Anquan

2015-02-01

We fabricated (00l) BiFeO3 (BFO) thin films in different growth modes on SrRuO3/SrTiO3 substrates using a pulsed laser deposition technique. X-ray diffraction patterns show an out-of-plane lattice constant of 4.03 Å and ferroelectric polarization of 82 µC/cm2 for the BFO thin film in a layer-by-layer growth mode (2D-BFO), larger than 3.96 Å and 51 µC/cm2 for the thin film in the 3D-island formation growth mode (3D-BFO). The 2D-BFO thin film at 300 K shows switchable on/off diode currents upon polarization flipping near a negative coercive voltage, which is nevertheless absent from the above 3D-BFO thin film. From a positive-up-negative-down pulse characterization technique, we measured domain switching current transients as well as polarization-voltage (Pf-Vf) hysteresis loops in both semiconducting thin films. Pf-Vf hysteresis loops after 1 µs-retention time show the preferred domain orientation pointing to bottom electrodes in a 3D-BFO thin film. The poor retention of the domains pointing to top electrodes can be improved considerably in a 2D-BFO thin film. From these measurements, we extracted domain switching time dependence of coercive voltage at temperatures of 78-300 K. From these dependences, we found coercive voltages in semiconducting ferroelectric thin films much higher than those in insulating thin films, disobeying the traditional Merz equation. Finally, an equivalent resistance model in description of free-carrier compensation of the front domain boundary charge is developed to interpret this difference. This equivalent resistance can be coincidently extracted either from domain switching time dependence of coercive voltage or from applied voltage dependence of domain switching current, which drops almost linearly with the temperature until down to 0 in a ferroelectric insulator at 78 K.

Zero Thermal Noise in Resistors at Zero Temperature

NASA Astrophysics Data System (ADS)

Kish, Laszlo B.; Niklasson, Gunnar A.; Granqvist, Claes-Göran

2016-06-01

The bandwidth of transistors in logic devices approaches the quantum limit, where Johnson noise and associated error rates are supposed to be strongly enhanced. However, the related theory — asserting a temperature-independent quantum zero-point (ZP) contribution to Johnson noise, which dominates the quantum regime — is controversial and resolution of the controversy is essential to determine the real error rate and fundamental energy dissipation limits of logic gates in the quantum limit. The Callen-Welton formula (fluctuation-dissipation theorem) of voltage and current noise for a resistance is the sum of Nyquist’s classical Johnson noise equation and a quantum ZP term with a power density spectrum proportional to frequency and independent of temperature. The classical Johnson-Nyquist formula vanishes at the approach of zero temperature, but the quantum ZP term still predicts non-zero noise voltage and current. Here, we show that this noise cannot be reconciled with the Fermi-Dirac distribution, which defines the thermodynamics of electrons according to quantum-statistical physics. Consequently, Johnson noise must be nil at zero temperature, and non-zero noise found for certain experimental arrangements may be a measurement artifact, such as the one mentioned in Kleen’s uncertainty relation argument.

High-Field Quench Behavior and Protection of $$Bi_2 Sr_2 Ca Cu_2 O_x$$ Coils: Minimum and Maximum Quench Detection Voltages

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Tengming; Ye, Liyang; Turrioni, Daniele

Small insert coils have been built using a multifilamentary Bi2Sr2CaCu2Ox round wire, and characterized in background fields to explore the quench behaviors and limits of Bi2Sr2CaCu2Ox superconducting magnets, with an emphasis on assessing the impact of slow normal zone propagation on quench detection. Using heaters of various lengths to initiate a small normal zone, a coil was quenched safely more than 70 times without degradation, with the maximum coil temperature reaching 280 K. Coils withstood a resistive voltage of tens of mV for seconds without quenching, showing the high stability of these coils and suggesting that the quench detection voltagemore » shall be greater than 50 mV to not to falsely trigger protection. The hot spot temperature for the resistive voltage of the normal zone to reach 100 mV increases from ~40 K to ~80 K with increasing the operating wire current density Jo from 89 A/mm2 to 354 A/mm2 whereas for the voltage to reach 1 V, it increases from ~60 K to ~140 K, showing the increasing negative impact of slow normal zone propagation on quench detection with increasing Jo and the need to limit the quench detection voltage to < 1 V. These measurements, coupled with an analytical quench model, were used to access the impact of the maximum allowable voltage and temperature upon quench detection on the quench protection, assuming to limit the hot spot temperature to <300 K.« less

Apparatus for combinatorial screening of electrochemical materials

DOEpatents

Kepler, Keith Douglas [Belmont, CA; Wang, Yu [Foster City, CA

2009-12-15

A high throughput combinatorial screening method and apparatus for the evaluation of electrochemical materials using a single voltage source (2) is disclosed wherein temperature changes arising from the application of an electrical load to a cell array (1) are used to evaluate the relative electrochemical efficiency of the materials comprising the array. The apparatus may include an array of electrochemical cells (1) that are connected to each other in parallel or in series, an electronic load (2) for applying a voltage or current to the electrochemical cells (1), and a device (3), external to the cells, for monitoring the relative temperature of each cell when the load is applied.

Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe.

PubMed

Prevosto, L; Kelly, H; Mancinelli, B

2013-12-01

This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

NASA Technical Reports Server (NTRS)

Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

2011-01-01

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

Observation of Sinusoidal Voltage Behaviour in Silver Doped YBCO

NASA Astrophysics Data System (ADS)

Altinkok, Atilgan; Olutas, Murat; Kilic, Kivilcim; Kilic, Atilla

The influence of bi-directional square wave (BSW) current was investigated on the evolution of the V - t curves at different periods (P) , temperatures and external magnetic fields. It was observed that slow transport relaxation measurements result in regular sinusoidal voltage oscillations which were discussed mainly in terms of the dynamic competition between pinning and depinning.The symmetry in the voltage oscillations was attributed to the elastic coupling between the flux lines and the pinning centers along grain boundaries and partly inside the grains. This case was also correlated to the equality between flux entry and exit along the YBCO/Ag sample during regular oscillations. It was shown that the voltage oscillations can be described well by an empirical expression V (t) sin(wt + φ) . We found that the phase angle φgenerally takes different values for the repetitive oscillations. Fast Fourier Transform analysis of the V - t oscillations showed that the oscillation period is comparable to that (PI) of the BSW current. This finding suggests a physical mechanism associated with charge density waves (CDWs), and, indeed, the weakly pinned flux line system in YBCO/Ag resembles the general behavior of CDWs. At certain values of PI, amplitude of BSW current, H and T, the YBCO/Ag sample behaves like a double-integrator, since it converts the BSW current to sinusoidal voltage oscillations in time.

Ion properties in a Hall current thruster operating at high voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garrigues, L., E-mail: laurent.garrigues@laplace.univ-tlse.fr

2016-04-28

Operation of a 5 kW-class Hall current Thruster for various voltages from 400 V to 800 V and a xenon mass flow rate of 6 mg s{sup −1} have been studied with a quasi-neutral hybrid model. In this model, anomalous electron transport is fitted from ion mean velocity measurements, and energy losses due to electron–wall interactions are used as a tuned parameter to match expected electron temperature strength for same class of thruster. Doubly charged ions production has been taken into account and detailed collisions between heavy species included. As the electron temperature increases, the main channel of Xe{sup 2+} ion production becomes stepwisemore » ionization of Xe{sup +} ions. For an applied voltage of 800 V, the mass utilization efficiency is in the range of 0.8–1.1, and the current fraction of doubly charged ions varies between 0.1 and 0.2. Results show that the region of ion production of each species is located at the same place inside the thruster channel. Because collision processes mean free path is larger than the acceleration region, each type of ions experiences same potential drop, and ion energy distributions of singly and doubly charged are very similar.« less

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

NASA Technical Reports Server (NTRS)

Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

1988-01-01

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Testing the Auroral Current-Voltage Relation in Multiple Arcs

NASA Astrophysics Data System (ADS)

Cameron, T. G.; Knudsen, D. J.; Cully, C. M.

2013-12-01

The well-known current-voltage relation within auroral inverted-V regions [Knight, Planet. Space Sci., 21, 741, 1973] predicts current carried by an auroral flux tube given the total potential drop between a plasma-sheet source region and the ionosphere. Numerous previous studies have tested this relation using spacecraft that traverse auroral arcs at low (ionospheric) or mid altitudes. Typically, the potential drop is estimated at the peak of the inverted-V, and field-aligned current is estimated from magnetometer data; statistical information is then gathered over many arc crossings that occur over a wide range of source conditions. In this study we use electron data from the FAST satellite to examine the current-voltage relation in multiple arc sets, in which the key source parameters (plasma sheet density and temperature) are presumed to be identical. We argue that this approach provides a more sensitive test of the Knight relation, and we seek to explain remaining variability with factors other than source variability. This study is supported by a grant from the Natural Sciences and Engineering Research Council of Canada.

Silicon-based hot electron emitting substrate with double tunneling

NASA Astrophysics Data System (ADS)

Chen, Fei; Zhan, Xinghua; Salcic, Zoran; Wong, Chee Cheong; Gao, Wei

2017-07-01

We propose a novel silicon structure, Hot Electron Emitting Substrate (HEES), which exhibits important effect of repeated tunneling at two different voltage ranges, which we refer to as double tunneling. In ambient atmosphere and room temperature, the I-V characteristic of HEES shows two current peaks during voltage sweep from 2 to 15 V. These two peaks are formed by the Fowler-Nordheim (FN) tunneling effect and tunneling diode mechanism, respectively.

Thermoelectric Generation Of Current - Theoretical And Experimental Analysis

NASA Astrophysics Data System (ADS)

Ruciński, Adam; Rusowicz, Artur

2017-12-01

This paper provides some information about thermoelectric technology. Some new materials with improved figures of merit are presented. These materials in Peltier modules make it possible to generate electric current thanks to a temperature difference. The paper indicates possible applications of thermoelectric modules as interesting tools for using various waste heat sources. Some zero-dimensional equations describing the conditions of electric power generation are given. Also, operating parameters of Peltier modules, such as voltage and electric current, are analyzed. The paper shows chosen characteristics of power generation parameters. Then, an experimental stand for ongoing research and experimental measurements are described. The authors consider the resistance of a receiver placed in the electric circuit with thermoelectric elements. Finally, both the analysis of experimental results and conclusions drawn from theoretical findings are presented. Voltage generation of about 1.5 to 2.5 V for the temperature difference from 65 to 85 K was observed when a bismuth telluride thermoelectric couple (traditionally used in cooling technology) was used.

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

NASA Astrophysics Data System (ADS)

Shim, Jaewoo; Oh, Seyong; Kang, Dong-Ho; Jo, Seo-Hyeon; Ali, Muhammad Hasnain; Choi, Woo-Young; Heo, Keun; Jeon, Jaeho; Lee, Sungjoo; Kim, Minwoo; Song, Young Jae; Park, Jin-Hong

2016-11-01

Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

Pulse measurement of the hot spot current in a NbTiN superconducting filament

NASA Astrophysics Data System (ADS)

Harrabi, K.; Mekki, A.; Kunwar, S.; Maneval, J. P.

2018-02-01

We have studied the voltage response of superconducting NbTiN filaments to a step-pulse of over-critical current I > Ic. The current induces the destruction of the Cooper pairs and initiates different mechanisms of dissipation depending on the bath temperature T. For the sample investigated, and for T above a certain T*, not far from Tc, the resistance manifests itself in the form of a phase-slip center, which turns into a normal hot spot (HS) as the step-pulse is given larger amplitudes. However, at all temperatures below T*, the destruction of superconductivity still occurs at Ic(T), but leads directly to an ever-growing HS. By lowering the current amplitude during the pulse, one can produce a steady HS and thus define a threshold HS current Ih(T). That is achieved by combining two levels of current, the first and larger one to initiate an HS, the second one to search for constant voltage response. The double diagram of the functions Ic(T) and Ih(T) was plotted in the T-range Tc/2 < T < Tc, and their crossing found at T* = (8.07 ± 0.07) K.

Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Qiu, WeiCheng; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn

2014-11-14

The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be themore » best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.« less

Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding

NASA Astrophysics Data System (ADS)

Jung, A.; Zhang, Y.; Arroyo Rojas Dasilva, Y.; Isa, F.; von Känel, H.

2018-02-01

We study covalent bonds between p-doped Si wafers (resistivity ˜10 Ω cm) fabricated on a recently developed 200 mm high-vacuum system. Oxide- and void free interfaces were obtained by argon (Ar) or neon (Ne) sputtering prior to wafer bonding at room temperature. The influence of the sputter induced amorphous Si layer at the bonding interface on the electrical behavior is accessed with temperature-dependent current-voltage measurements. In as-bonded structures, charge transport is impeded by a potential barrier of 0.7 V at the interface with thermionic emission being the dominant charge transport mechanism. Current-voltage characteristics are found to be asymmetric which can tentatively be attributed to electric dipole formation at the interface as a result of the time delay between the surface preparation of the two bonding partners. Electron beam induced current measurements confirm the corresponding asymmetric double Schottky barrier like band-alignment. Moreover, we demonstrate that defect annihilation at a low temperature of 400 °C increases the electrical conductivity by up to three orders of magnitude despite the lack of recrystallization of the amorphous layer. This effect is found to be more pronounced for Ne sputtered surfaces which is attributed to the lighter atomic mass compared to Ar, inducing weaker lattice distortions during the sputtering.

Absolute Determination of High DC Voltages by Means of Frequency Measurement

NASA Astrophysics Data System (ADS)

Peier, Dirk; Schulz, Bernd

1983-01-01

A novel absolute measuring procedure is presented for the definition of fixed points of the voltage in the 100 kV range. The method is based on transit time measurements with accelerated electrons. By utilizing the selective interaction of a monoenergetic electron beam with the electromagnetic field of a special cavity resonator, the voltage is referred to fundamental constants and the base unit second. Possible balance voltages are indicated by a current detector. Experimental investigations are carried out with resonators in the normal conducting range. With a copper resonator operating at the temperature of boiling nitrogen (77 K), the relative uncertainty of the voltage points is estimated to be +/- 4 × 10-4. The technically realizable uncertainty can be reduced to +/- 1 × 10-5 by the proposed application of a superconducting niobium resonator. Thus this measuring device becomes suitable as a primary standard for the high-voltage range.

Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits

NASA Astrophysics Data System (ADS)

Chen, R. M.; Diggins, Z. J.; Mahatme, N. N.; Wang, L.; Zhang, E. X.; Chen, Y. P.; Zhang, H.; Liu, Y. N.; Narasimham, B.; Witulski, A. F.; Bhuva, B. L.; Fleetwood, D. M.

2017-08-01

The single-event sensitivity of bulk 40-nm sequential circuits is investigated as a function of temperature and supply voltage. An overall increase in SEU cross section versus temperature is observed at relatively high supply voltages. However, at low supply voltages, there is a threshold temperature beyond which the SEU cross section decreases with further increases in temperature. Single-event transient induced errors in flip-flops also increase versus temperature at relatively high supply voltages and are more sensitive to temperature variation than those caused by single-event upsets.

Monitoring of a 1 kWp Solar Photovoltaic System

NASA Astrophysics Data System (ADS)

Malek, M. F.; Zainuddin, H.; Rejab, S. N. M.; Shaari, S. N.; Shaari, S.; Omar, A. M.; Rusop, M.

2009-06-01

A 1 kWp `stand alone' PV system consists of 4 module (2 BP SX75U module and 2 BP 275F module), inverter, 2 thermocouple, 3 voltage sensor, 3 current sensor, 4 battery and data logger (Data Taker DT80) has been set up. This research involve nine parameters which are irradiance (Ia), ambient temperature (Tamb), module temperature (Tmod), module voltage (Vmod), battery voltage (Vbat), load voltage (Vload), module current (Imod), battery current (Ibat) and load current (Iload). All parameters were measured using the equipments and sensors that connected directly to data logger (Data Taker DT80) to interpret and show the data on computer using the Delogger sofware. The data then was transferred into the computer and analyzed using the Deview and Microsoft Excel software to determine the performance indices for the stand alone PV system. From the analysis a few performance indices were determined. The range of daily solar irradiation is between 2.20 kWhm-2 to 4.00 kWhm-2, while the range of total global irradiation is between 5.76 kWh to 10.48 kWh. For daily total energy yield, the range is between 0.23 kWh d-1 to 0.28 kWh d-1. The range for clearness index is between 0.49% to 0.89%. The range for final yield is between 0.77 kWh d-1 kWp-1 to 0.93 kWhd-1 kWp-1 while the range of array efficiency is between 2.53% to 4.65%. Lastly, the range of the performance ratio is between 22.08% to 40.58%.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stewart, Gary

The primary objective of this project was to demonstrate the feasibility and reliability of utilizing high-temperature superconducting (HTS) materials in a Transmission Level Superconducting Fault Current Limiter (SFCL) application. During the project, the type of high-temperature superconducting material used evolved from 1 st generation (1G) BSCCO-2212 melt cast bulk high-temperature superconductors to 2 nd generation (2G) YBCO-based high-temperature superconducting tape. The SFCL employed SuperPower's “Matrix” technology, that offers modular features to enable scale up to transmission voltage levels. The SFCL consists of individual modules that contain elements and parallel inductors that assist in carrying the current during the fault. Amore » number of these modules are arranged in an m x n array to form the current-limiting matrix.« less

Low Temperature Operation of a Switching Power Converter

NASA Technical Reports Server (NTRS)

Anglada-Sanchez, Carlos R.; Perez-Feliciano, David; Ray, Biswajit

1997-01-01

The low temperature operation of a 48 W, 50 kHz, 36/12 V pulse width modulated (PWM) buck de-de power converter designed with standard commercially available components and devices is reported. The efficiency of the converter increased from 85.6% at room temperature (300 K) to 92.0% at liquid nitrogen temperature (77 K). The variation of power MOSFET, diode rectifier, and output filter inductor loss with temperature is discussed. Relevant current, voltage. and power waveforms are also included.

An Accurate Temperature Correction Model for Thermocouple Hygrometers 1

PubMed Central

Savage, Michael J.; Cass, Alfred; de Jager, James M.

1982-01-01

Numerous water relation studies have used thermocouple hygrometers routinely. However, the accurate temperature correction of hygrometer calibration curve slopes seems to have been largely neglected in both psychrometric and dewpoint techniques. In the case of thermocouple psychrometers, two temperature correction models are proposed, each based on measurement of the thermojunction radius and calculation of the theoretical voltage sensitivity to changes in water potential. The first model relies on calibration at a single temperature and the second at two temperatures. Both these models were more accurate than the temperature correction models currently in use for four psychrometers calibrated over a range of temperatures (15-38°C). The model based on calibration at two temperatures is superior to that based on only one calibration. The model proposed for dewpoint hygrometers is similar to that for psychrometers. It is based on the theoretical voltage sensitivity to changes in water potential. Comparison with empirical data from three dewpoint hygrometers calibrated at four different temperatures indicates that these instruments need only be calibrated at, e.g. 25°C, if the calibration slopes are corrected for temperature. PMID:16662241

High voltage design structure for high temperature superconducting device

DOEpatents

Tekletsadik, Kasegn D [Rexford, NY

2008-05-20

In accordance with the present invention, modular corona shields are employed in a HTS device to reduce the electric field surrounding the HTS device. In a exemplary embodiment a fault current limiter module in the insulation region of a cryogenic cooling system has at least one fault current limiter set which employs a first corona shield disposed along the top portion of the fault current limiter set and is electrically coupled to the fault current limiter set. A second corona shield is disposed along the bottom portion of the fault current limiter set and is electrically coupled to the fault current limiter set. An insulation barrier is disposed within the insulation region along at least one side of the fault current limiter set. The first corona shield and the second corona shield act together to reduce the electric field surrounding the fault limiter set when voltage is applied to the fault limiter set.

Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes

NASA Astrophysics Data System (ADS)

Hsueh, Kuang-Po; Cheng, Po-Wei; Cheng, Yi-Chang; Sheu, Jinn-Kong; Yeh, Yu-Hsiang; Chiu, Hsien-Chin; Wang, Hsiang-Chun

2013-03-01

This study investigates the temperature dependence of the current-voltage (I-V) characteristics of Al-doped MgxZn1-xO/p-GaN junction diodes. Specifically, this study reports the deposition of n-type Al-doped MgxZn1-xO (AMZO) films on p-GaN using a radio-frequency (RF) magnetron sputtering system followed by annealing at 700, 800, 900, and 1000 °C in a nitrogen ambient for 60 seconds, respectively. The AMZO/GaN films were thereafter analyzed using Hall measurement and the x-ray diffraction (XRD) patterns. The XRD results show that the diffraction angles of the annealed AMZO films remain the same as that of GaN without shifting. The n-AMZO/p-GaN diode with 900 °C annealing had the lowest leakage current in forward and reverse bias. However, the leakage current of the diodes did not change significantly with an increase in annealing temperatures. These findings show that the n-AMZO/p-GaN junction diode is feasible for GaN-based heterojunction bipolar transistors (HBTs) and UV light-emitting diodes (LEDs).

Simultaneous measurement of temperature and strain using four connecting wires

NASA Technical Reports Server (NTRS)

Parker, Allen R., Jr.

1993-01-01

This paper describes a new signal-conditioning technique for measuring strain and temperature which uses fewer connecting wires than conventional techniques. Simultaneous measurement of temperature and strain has been achieved by using thermocouple wire to connect strain gages to signal conditioning. This signal conditioning uses a new method for demultiplexing sampled analog signals and the Anderson current loop circuit. Theory is presented along with data to confirm that strain gage resistance change is sensed without appreciable error because of thermoelectric effects. Furthermore, temperature is sensed without appreciable error because of voltage drops caused by strain gage excitation current flowing through the gage resistance.

Ultraviolet Rayleigh Scatter Imaging for Spatial Temperature Profiles in Atmospheric Microdischarges

DTIC Science & Technology

2014-09-01

regime and not in a neighboring regime such as an abnormal glow or a corona discharge . As discussed in section 3.1, unlike abnormal discharges or... coronas , normal glows have a voltage drop that is independent of discharge current for several orders of magnitude, which would manifest itself...5 3.2 Discharge Power and Gas Temperature

A copper-coated fiber Bragg grating current sensor

NASA Astrophysics Data System (ADS)

Jia, Danping; Zhao, Limin; Lin, Yingwen

2005-01-01

Conventional current transformer (CT) is based on the principles of electric magnetic induction with copper wire windings and iron cores, it is widely used in power systems. But it emerges more weakness as the applied voltage and power capacity more and more increase. Over the past 20 years optical current sensors have received significant attention by a number of groups around the world as next generation high voltage measurement devices, with a view to replacing iron-corn current transformers in the electric power industry. In the opposite side of conventional current transformer, optical fiber current sensor provides a solution of the existed problems. It brings the significant advantages that they are non-conductive and lightweight, which can allow for much simpler insulation and mounting designs as the application voltage increase to1000kV or more to day. In addition, optical sensors do not exhibit hysteresis and provide a much large dynamic range and frequency response than iron-core CT. Optical fiber Bragg grating current sensor is the most potential important one among the optical current sensors, but its current transferred sensibility and the capability of anti-variance of temperature and stress still in a lower level. In this paper, a copper coated Bragg grating current sensor are described. The sensibility is improved significantly.

Fast surface temperature measurement of Teflon propellant-in-pulsed ablative discharges using HgCdTe photovoltaic cells

NASA Astrophysics Data System (ADS)

Antonsen, Erik L.; Burton, Rodney L.; Reed, Garrett A.; Spanjers, Gregory G.

2006-10-01

High-speed mercury cadmium telluride photovoltaic detectors, sensitive to infrared emission, are investigated as a means of measuring surface temperature on a microsecond time frame during pulsed ablative discharges with Teflon™ as the ablated material. Analysis is used to derive a governing equation for detector output voltage for materials with wavelength dependent emissivity. The detector output voltage is experimentally calibrated against thermocouples embedded in heated Teflon. Experimental calibration is performed with Teflon that has been exposed to ˜200 pulsed discharges and non-plasma-exposed Teflon and is compared to theoretical predictions to analyze emissivity differences. The diagnostic capability is evaluated with measurements of surface temperature from the Teflon propellant of electric micropulsed plasma thrusters. During the pulsed current discharge, there is insufficient information to claim that the surface temperature is accurately measured. However, immediately following the discharge, the postpulse cooling curve is measured. The statistical spread of postpulse surface temperature from shot to shot, most likely due to arc constriction and localization, is investigated to determine an operational envelope for postpulse temperature and mass ablation. This information is useful for determining postpulse ablation contributions to mass loss as well as evaluation of theoretical discharge models currently under development.

Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors

NASA Astrophysics Data System (ADS)

Zhang, Hongpeng; Jia, Renxu; Lei, Yuan; Tang, Xiaoyan; Zhang, Yimen; Zhang, Yuming

2018-02-01

In this paper, current conduction mechanisms in HfO2/β-Ga2O3 metal-oxide-semiconductor (MOS) capacitors under positive and negative biases are investigated using the current-voltage (I-V) measurements conducted at temperatures from 298 K to 378 K. The Schottky emission is dominant under positively biased electric fields of 0.37-2.19 MV cm-1, and the extracted Schottky barrier height ranged from 0.88 eV to 0.91 eV at various temperatures. The Poole-Frenkel emission dominates under negatively biased fields of 1.92-4.83 MV cm-1, and the trap energy levels are from 0.71 eV to 0.77 eV at various temperatures. The conduction band offset (ΔE c) of HfO2/β-Ga2O3 is extracted to be 1.31  ±  0.05 eV via x-ray photoelectron spectroscopy, while a large negative sheet charge density of 1.04  ×  1013 cm-2 is induced at the oxide layer and/or HfO2/β-Ga2O3 interface. A low C-V hysteresis of 0.76 V, low interface state density (D it) close to 1  ×  1012 eV-1 cm-2, and low leakage current density of 2.38  ×  10-5 A cm-2 at a gate voltage of 7 V has been obtained, suggesting the great electrical properties of HfO2/β-Ga2O3 MOSCAP. According to the above analysis, ALD-HfO2 is an attractive candidate for high voltage β-Ga2O3 power devices.

Surface morphology and electrical properties of Au/Ni/ Left-Pointing-Angle-Bracket C Right-Pointing-Angle-Bracket /n-Ga{sub 2}O{sub 3}/p-GaSe Left-Pointing-Angle-Bracket KNO{sub 3} Right-Pointing-Angle-Bracket hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakhtinov, A. P., E-mail: chimsp@ukrpost.ua; Vodopyanov, V. N.; Netyaga, V. V.

2012-03-15

Features of the formation of Au/Ni/ Left-Pointing-Angle-Bracket C Right-Pointing-Angle-Bracket /n-Ga{sub 2}O{sub 3} hybrid nanostructures on a Van der Waals surface (0001) of 'layered semiconductor-ferroelectric' composite nanostructures (p-GaSe Left-Pointing-Angle-Bracket KNO{sub 3} Right-Pointing-Angle-Bracket ) are studied using atomic-force microscopy. The room-temperature current-voltage characteristics and the dependence of the impedance spectrum of hybrid structures on a bias voltage are studied. The current-voltage characteristic includes a resonance peak and a portion with negative differential resistance. The current attains a maximum at a certain bias voltage, when electric polarization switching in nanoscale three-dimensional inclusions in the layered GaSe matrix occurs. In the high-frequency region (fmore » > 10{sup 6} Hz), inductive-type impedance (a large negative capacitance of structures, {approx}10{sup 6} F/mm{sup 2}) is detected. This effect is due to spinpolarized electron transport in a series of interconnected semiconductor composite nanostructures with multiple p-GaSe Left-Pointing-Angle-Bracket KNO{sub 3} Right-Pointing-Angle-Bracket quantum wells and a forward-biased 'ferromagnetic metal-semiconductor' polarizer (Au/Ni/ Left-Pointing-Angle-Bracket C Right-Pointing-Angle-Bracket /n{sup +}-Ga{sub 2}O{sub 3}/n-Ga{sub 2}O{sub 3}). A shift of the maximum (current hysteresis) is detected in the current-voltage characteristics for various directions of the variations in bias voltage.« less

Effect of trap states and microstructure on charge carrier conduction mechanism through semicrystalline poly(vinyl alcohol) granular film

NASA Astrophysics Data System (ADS)

Das, A. K.; Bhowmik, R. N.; Meikap, A. K.

2018-05-01

We report a comprehensive study on hysteresis behaviour of current-voltage characteristic and impedance spectroscopy of granular semicrystalline poly(vinyl alcohol) (PVA) film. The charge carrier conduction mechanism and charge traps of granular PVA film by measuring and analyzing the temperature dependent current-voltage characteristic indicate a bi-stable electronic state in the film. A sharp transformation of charge carrier conduction mechanism from Poole-Frenkel emission to space charge limited current mechanism has been observed. An anomalous oscillatory behaviour of current has been observed due to electric pulse effect on the molecular chain of the polymer. Effect of microstructure on charge transport mechanism has been investigated from impedance spectroscopy analysis. An equivalent circuit model has been proposed to explain the result.

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

PubMed

Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

2011-11-22

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch(-2), ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

PubMed Central

Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

2011-01-01

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch−2, ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns. PMID:22109527

Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications

NASA Astrophysics Data System (ADS)

Tadjer, Marko J.; Mahadik, Nadeemullah A.; Freitas, Jaime A.; Glaser, Evan R.; Koehler, Andrew D.; Luna, Lunet E.; Feigelson, Boris N.; Hobart, Karl D.; Kub, Fritz J.; Kuramata, A.

2018-02-01

We present novel approaches for the development of Ga2O3 Schottky barrier and heterojunction diodes. Samples of β- Ga2O3 were first annealed in N2 and O2 to demonstrate the effect of annealing on the carrier concentration. Cathodoluminescence and electron spin resonance measurements were also performed. Schottky barrier diodes on asgrown and O2-annealed epitaxial Ga2O3 films were fabricated and breakdown voltages were compared. Lower reverse current and a breakdown voltage of about 857 V were measured on the O2-annealed device. Finally, we report preliminary results from the development of anisotype heterojunctions between n-type Ga2O3 with a sputtered NiO layer. Rectifying current-voltage characteristics were obtained when the NiO was deposited both at room temperature and at 450 °C.

Voltage-dependent Ca2+ release from the SR of feline ventricular myocytes is explained by Ca2+-induced Ca2+ release.

PubMed

Piacentino, V; Dipla, K; Gaughan, J P; Houser, S R

2000-03-15

1. Direct voltage-gated (voltage-dependent Ca2+ release, VDCR) and Ca2+ influx-gated (Ca2+-induced Ca2+ release, CICR) sarcoplasmic reticulum (SR) Ca2+ release were studied in feline ventricular myocytes. The voltage-contraction relationship predicted by the VDCR hypothesis is sigmoidal with large contractions at potentials near the Ca2+ equilibrium potential (ECa). The relationship predicted by the CICR hypothesis is bell-shaped with no contraction at ECa. 2. The voltage dependence of contraction was measured in ventricular myocytes at physiological temperature (37 C), resting membrane potential and physiological [K+]. Experiments were performed with cyclic adenosine 3',5'-monophosphate (cAMP) in the pipette or in the presence of the beta-adrenergic agonist isoproterenol (isoprenaline; ISO). 3. The voltage-contraction relationship was bell-shaped in Na+-free solutions (to eliminate the Na+ current and Na+-Ca2+ exchange, NCX) but the relationship was broader than the L-type Ca2+ current (ICa,L)-voltage relationship. 4. Contractions induced with voltage steps from normal resting potentials to -40 mV are thought to represent VDCR rather than CICR. We found that cAMP and ISO shifted the voltage dependence of ICa,L activation to more negative potentials so that ICa,L was always present with steps to -40 mV. ICa,L at -40 mV inactivated when the holding potential was decreased (VŁ = -57.8 +/- 0.49 mV). 5. ISO increased inward current, SR Ca2+ load and contraction in physiological [Na+] and a broad bell-shaped voltage-contraction relationship was observed. Inhibition of reverse-mode NCX, decreasing ICa,L and decreasing SR Ca2+ loading all decreased contractions at strongly positive potentials near ECa. 6. The voltage-contraction relationship in 200 microM cadmium (Cd2+) was bell-shaped, supporting a role of ICa,L rather than VDCR. 7. All results could be accounted for by the CICR hypothesis, and many results exclude the VDCR hypothesis.

Low Temperature Noise and Electrical Characterization of the Company Heterojunction Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Gee, Russell C.; Fossum, Eric R.; Baier, Steven M.

1993-01-01

This paper discusses the electrical properties of the complementary heterojunction field-effect transistor (CHFET) at 4K, including the gate leakage current, the subthreshold transconductance, and the input-referred noise voltage.

Self-regulating proportionally controlled heating apparatus and technique

NASA Technical Reports Server (NTRS)

Strange, M. G. (Inventor)

1975-01-01

A self-regulating proportionally controlled heating apparatus and technique is provided wherein a single electrical resistance heating element having a temperature coefficient of resistance serves simultaneously as a heater and temperature sensor. The heating element is current-driven and the voltage drop across the heating element is monitored and a component extracted which is attributable to a change in actual temperature of the heating element from a desired reference temperature, so as to produce a resulting error signal. The error signal is utilized to control the level of the heater drive current and the actual heater temperature in a direction to reduce the noted temperature difference. The continuous nature of the process for deriving the error signal feedback information results in true proportional control of the heating element without the necessity for current-switching which may interfere with nearby sensitive circuits, and with no cyclical variation in the controlled temperature.

Three-dimensional computational fluid dynamics modelling and experimental validation of the Jülich Mark-F solid oxide fuel cell stack

NASA Astrophysics Data System (ADS)

Nishida, R. T.; Beale, S. B.; Pharoah, J. G.; de Haart, L. G. J.; Blum, L.

2018-01-01

This work is among the first where the results of an extensive experimental research programme are compared to performance calculations of a comprehensive computational fluid dynamics model for a solid oxide fuel cell stack. The model, which combines electrochemical reactions with momentum, heat, and mass transport, is used to obtain results for an established industrial-scale fuel cell stack design with complex manifolds. To validate the model, comparisons with experimentally gathered voltage and temperature data are made for the Jülich Mark-F, 18-cell stack operating in a test furnace. Good agreement is obtained between the model and experiment results for cell voltages and temperature distributions, confirming the validity of the computational methodology for stack design. The transient effects during ramp up of current in the experiment may explain a lower average voltage than model predictions for the power curve.

Electric-Field-Induced Degradation of Methylammonium Lead Iodide Perovskite Solar Cells.

PubMed

Bae, Soohyun; Kim, Seongtak; Lee, Sang-Won; Cho, Kyung Jin; Park, Sungeun; Lee, Seunghun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan

2016-08-18

Perovskite solar cells have great potential for high efficiency generation but are subject to the impact of external environmental conditions such as humidity, UV and sun light, temperature, and electric fields. The long-term stability of perovskite solar cells is an important issue for their commercialization. Various studies on the stability of perovskite solar cells are currently being performed; however, the stability related to electric fields is rarely discussed. Here the electrical stability of perovskite solar cells is studied. Ion migration is confirmed using the temperature-dependent dark current decay. Changes in the power conversion efficiency according to the amount of the external bias are measured in the dark, and a significant drop is observed only at an applied voltage greater than 0.8 V. We demonstrate that perovskite solar cells are stable under an electric field up to the operating voltage.

Integrating preconcentrator heat controller

DOEpatents

Bouchier, Francis A.; Arakaki, Lester H.; Varley, Eric S.

2007-10-16

A method and apparatus for controlling the electric resistance heating of a metallic chemical preconcentrator screen, for example, used in portable trace explosives detectors. The length of the heating time-period is automatically adjusted to compensate for any changes in the voltage driving the heating current across the screen, for example, due to gradual discharge or aging of a battery. The total deposited energy in the screen is proportional to the integral over time of the square of the voltage drop across the screen. Since the net temperature rise, .DELTA.T.sub.s, of the screen, from beginning to end of the heating pulse, is proportional to the total amount of heat energy deposited in the screen during the heating pulse, then this integral can be calculated in real-time and used to terminate the heating current when a pre-set target value has been reached; thereby providing a consistent and reliable screen temperature rise, .DELTA.T.sub.s, from pulse-to-pulse.

Hydrodynamic pumping of a quantum Fermi liquid in a semiconductor heterostructure

NASA Astrophysics Data System (ADS)

Heremans, J. J.; Kantha, D.; Chen, H.; Govorov, A. O.

2003-03-01

We present experimental results for a pumping mechanism observed in mesoscopic structures patterned on two-dimensional electron systems in GaAs/AlGaAs heterostructures. The experiments are performed at low temperatures, in the ballistic regime. The effect is observed as a voltage or current signal corresponding to carrier extraction from sub-micron sized apertures, when these apertures are swept by a beam of ballistic electrons. The carrier extraction, phenomenologically reminiscent of the Bernoulli pumping effect in classical fluids, has been observed in various geometries. We ascertained linearity between measured voltage and injected current in all experiments, thereby excluding rectification effects. The linear response, however, points to a fundamental difference from the Bernoulli effect in classical liquids, where the response is nonlinear and quadratic in terms of the velocity. The temperature dependence of the effect will also be presented. We thank M. Shayegan (Princeton University) for the heterostructure growth, and acknowledge support from NSF DMR-0094055.

Positive ion temperature effect on the plasma-wall transition

NASA Astrophysics Data System (ADS)

Morales Crespo, R.

2018-06-01

This paper analyses the plasma-wall interaction of a plasma in contact with a conducting planar surface when the positive-ion temperature is not negligible compared with the electron one. The electric potential from the plasma to the wall is obtained by the appropriate formulation of the model as an initial-value problem as well as some features useful for experimental applications, such as the positive current-to-voltage characteristics, the saturation current density, the floating potential or an estimation of the sheath thickness. Finally, it is analysed how all these quantities depend on the ionization degree and the positive-ion temperature.

Band-to-band tunneling field effect transistor for low power logic and memory applications: Design, fabrication and characterization

NASA Astrophysics Data System (ADS)

Mookerjea, Saurabh A.

Over the past decade the microprocessor clock frequency has hit a plateau. The main reason for this has been the inability to follow constant electric field scaling, which requires the transistor supply voltage to be scaled down as the transistor dimensions are reduced. Scaling the supply voltage down reduces the dynamic power quadratically but increases the static leakage power exponentially due to non-scalability of threshold voltage of the transistor, which is required to maintain the same ON state performance. This limitation in supply voltage scaling is directly related to MOSFET's (Metal Oxide Semiconductor Field Effect Transistor) sub-threshold slope (SS) limitation of 60 mV/dec at room temperature. Thus novel device design/materials are required that would allow the transistor to switch with sub-threshold slopes steeper than 60 mV/dec at room temperature, thus facilitating supply voltage scaling. Recently, a new class of devices known as super-steep slope (SS<60 mV/dec) transistors are under intense research for its potential to replace the ubiquitous MOSFET. The focus of this dissertation is on the design, fabrication and characterization of band-to-band tunneling field effect transistor (TFET) which belongs to the family of steep slope transistors. TFET with a gate modulated zener tunnel junction at the source allows sub-kT/q (sub-60 mV/dec at room temperature) sub-threshold slope (SS) device operation over a certain gate bias range near the off-state. This allows TFET to achieve much higher I ON-IOFF ratio over a specified gate voltage swing compared to MOSFETs, thus enabling aggressive supply voltage scaling for low power logic operation without impacting its ON-OFF current ratio. This dissertation presents the operating principle of TFET, the material selection strategy and device design for TFET fabrication. This is followed by a novel 6T SRAM design which circumvents the issue of unidirectional conduction in TFET. The switching behavior of TFET is studied through mixed-mode numerical simulations. The significance of correct benchmarking methodology to estimate the effective drive current and capacitance in TFET is highlighted and compared with MOSFET. This is followed by the fabrication details of homo-junction TFET. Analysis of the electrical characteristics of homo-junction TFET gives key insight into its device operation and identifies the critical factors that impact its performance. In order to boost the ON current, the design and fabrication of hetero-junction TFET is also presented.

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing.

PubMed

Lu, Qifeng; Zhao, Chun; Mu, Yifei; Zhao, Ce Zhou; Taylor, Stephen; Chalker, Paul R

2015-07-29

A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results indicated that: (1) more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrO x ; (2) the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N₂ ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 10 12 cm -2 for as-deposited sample to 4.55 × 10 12 cm -2 for the 800 °C annealed one. In addition, the leakage current density increase from about 10 - ⁶ A/cm² at V g = +0.5 V for the as-deposited sample to 10 -3 A/cm² at V g = +0.5 V for the 900 °C annealed one.

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE PAGES

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

2015-08-12

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

Universality of Non-Ohmic Shunt Leakage in Thin-Film Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dongaonkar, S.; Servaites, J.D.; Ford, G.M.

2010-01-01

We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu(In,Ga)Se 2 (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (V<~0.4) and reverse bias, which cannot be explained by the classical solar cell diode model. This parasitic shunt current exhibits non-Ohmic behavior, as opposed to the traditional constant shunt resistance model for photovoltaics. We show here that this shunt leakage (I sh) , across all three solar cell types considered, is characterized by the following commonmore » phenomenological features: (a) voltage symmetry about V=0 , (b) nonlinear (power law) voltage dependence, and (c) extremely weak temperature dependence. Based on this analysis, we provide a simple method of subtracting this shunt current component from the measured data and discuss its implications on dark IV parameter extraction. We propose a space charge limited (SCL) current model for capturing all these features of the shunt leakage in a consistent framework and discuss possible physical origin of the parasitic paths responsible for this shunt current mechanism.« less

Influence of the magnetic field profile on ITER conductor testing

NASA Astrophysics Data System (ADS)

Nijhuis, A.; Ilyin, Y.; ten Kate, H. H. J.

2006-08-01

We performed simulations with the numerical CUDI-CICC code on a typical short ITER (International Thermonuclear Experimental Reactor) conductor test sample of dual leg configuration, as usually tested in the SULTAN test facility, and made a comparison with the new EFDA-Dipole test facility offering a larger applied DC field region. The new EFDA-Dipole test facility, designed for short sample testing of conductors for ITER, has a homogeneous high field region of 1.2 m, while in the SULTAN facility this region is three times shorter. The inevitable non-uniformity of the current distribution in the cable, introduced by the joints at both ends, has a degrading effect on voltage-current (VI) and voltage-temperature (VT) characteristics, particularly for these short samples. This can easily result in an underestimation or overestimation of the actual conductor performance. A longer applied DC high field region along a conductor suppresses the current non-uniformity by increasing the overall longitudinal cable electric field when reaching the current sharing mode. The numerical interpretation study presented here gives a quantitative analysis for a relevant practical case of a test of a short sample poloidal field coil insert (PFCI) conductor in SULTAN. The simulation includes the results of current distribution analysis from self-field measurements with Hall sensor arrays, current sharing measurements and inter-petal resistance measurements. The outcome of the simulations confirms that the current uniformity improves with a longer high field region but the 'measured' VI transition is barely affected, though the local peak voltages become somewhat suppressed. It appears that the location of the high field region and voltage taps has practically no influence on the VI curve as long as the transverse voltage components are adequately cancelled. In particular, for a thin conduit wall, the voltage taps should be connected to the conduit in the form of an (open) azimuthally soldered wire, averaging the transverse conduit surface potentials initiated in the joints.

Apparatus for in situ heating and vitrification

DOEpatents

Buelt, James L.; Oma, Kenton H.; Eschbach, Eugene A.

1994-01-01

An apparatus for decontaminating ground areas where toxic chemicals are buried includes a plurality of spaced electrodes located in the ground and to which a voltage is applied for bringing about current flow. Power delivered to the ground volatilizes the chemicals that are then collected and directed to a gas treatment system. A preferred form of the invention employs high voltage arc discharge between the electrodes for heating a ground region to relatively high temperatures at relatively low power levels. Electrodes according to the present invention are provided with preferentially active lower portions between which current flows for the purpose of soil heating or for soil melting and vitrification. Promoting current flow below ground level avoids predominantly superficial treatment and increases electrode life.

Pb/InAs nanowire josephson junction with high critical current and magnetic flux focusing.

PubMed

Paajaste, J; Amado, M; Roddaro, S; Bergeret, F S; Ercolani, D; Sorba, L; Giazotto, F

2015-03-11

We have studied mesoscopic Josephson junctions formed by highly n-doped InAs nanowires and superconducting Ti/Pb source and drain leads. The current-voltage properties of the system are investigated by varying temperature and external out-of-plane magnetic field. Superconductivity in the Pb electrodes persists up to ∼7 K and with magnetic field values up to 0.4 T. Josephson coupling at zero backgate voltage is observed up to 4.5 K and the critical current is measured to be as high as 615 nA. The supercurrent suppression as a function of the magnetic field reveals a diffraction pattern that is explained by a strong magnetic flux focusing provided by the superconducting electrodes forming the junction.

Apparatus for in situ heating and vitrification

DOEpatents

Buelt, J.L.; Oma, K.H.; Eschbach, E.A.

1994-05-31

An apparatus for decontaminating ground areas where toxic chemicals are buried includes a plurality of spaced electrodes located in the ground and to which a voltage is applied for bringing about current flow. Power delivered to the ground volatilizes the chemicals that are then collected and directed to a gas treatment system. A preferred form of the invention employs high voltage arc discharge between the electrodes for heating a ground region to relatively high temperatures at relatively low power levels. Electrodes according to the present invention are provided with preferentially active lower portions between which current flows for the purpose of soil heating or for soil melting and vitrification. Promoting current flow below ground level avoids predominantly superficial treatment and increases electrode life. 15 figs.

Investigation of a temperature tolerant InGaP (GaInP) converter layer for a 63Ni betavoltaic cell

NASA Astrophysics Data System (ADS)

Butera, S.; Whitaker, M. D. C.; Krysa, A. B.; Barnett, A. M.

2017-08-01

A prototype InGaP p+-i-n+ mesa photodiode was studied for its potential as the energy conversion device in a 63Ni betavoltaic cell; its electrical performance was analysed across the temperature range  -20 °C to 100 °C. The results show that the InGaP detector when illuminated with a laboratory 63Ni radioisotope beta particle source had a maximum output power of 0.92 pW at  -20 °C, this value decreased at higher temperatures. A decrease in the open circuit voltage and in the cell internal conversion efficiency were also observed when the temperature was increased: at  -20 °C, the open circuit voltage and the cell internal conversion efficiency had values of 0.69 V and 4%, respectively. A short circuit current of 4.5 pA was measured at  -20 °C.

Design and test of current limiting modules using YBCO-coated conductors

NASA Astrophysics Data System (ADS)

Schmidt, W.; Gamble, B.; Kraemer, H.-P.; Madura, D.; Otto, A.; Romanosky, W.

2010-01-01

Within the cooperation between American Superconductor Corporation (AMSC) and Siemens Corporate Technology we have investigated the fault current limiting performance of YBCO-coated conductors (also called second-generation or 2G HTS wires) stabilized with stainless steel laminates. Design rules for the length and width of the wire depending on utility grid requirements have been established. Bifilar coils have been manufactured and tested with a typical limitation period of 50 ms under stepwise increasing voltage loads to determine the maximum temperature the wires can withstand without degradation. Coils have been assembled into limiter modules demonstrating uniform tripping of the individual coils and recovery within seconds. At present this cooperation is proceeding within a joint project funded by the US Department of Energy (DOE) that encompasses the design, construction and testing of a 115 kV FCL for power transmission within a time frame of 4-5 years, and additional partners. Besides AMSC and Siemens, Nexans contributes the high voltage terminations and Los Alamos National Lab investigates the ac losses. Installation and testing are planned for a Southern California Edison substation. The module planned for the transmission voltage application consists of 63 horizontally arranged coils connected in parallel and series to account for a rated current of 1.2 kArms and voltage of 31 kVrms plus margins. The rated voltage of the module is considerably lower than the line to ground voltage in the 115 kV grid owing to our shunted limiter concept. The shunt reactor connected in parallel to the module outside the cryostat allows for adjustment of the limited current and reduces voltage drop across the module in case of a fault. The fault current reduction ratio is 42% for our present design. A subscale module comprising six full-size coils has been assembled and tested recently to validate the coil performance and coil winding technique. The module had a critical current of 425 ADC and a nominal power of 2.52 MV A at 77 K. A complete series of tests with applied voltage up to 8.4 kVrms, prospective short circuit current up to 26.6 kArms and variation of phase angle at initiation of the fault has been performed. After more than 40 switching tests the critical current of the module remained unchanged, indicating that no degradation of the wire occurred.

Thermally induced spin-dependent current based on Zigzag Germanene Nanoribbons

NASA Astrophysics Data System (ADS)

Majidi, Danial; Faez, Rahim

2017-02-01

In this paper, using first principle calculation and non-equilibrium Green's function, the thermally induced spin current in Hydrogen terminated Zigzag-edge Germanene Nanoribbon (ZGeNR-H) is investigated. In this model, because of the difference between the source and the drain temperature of ZGeNR device, the spin up and spin down currents flow in the opposite direction with two different threshold temperatures (Tth). Hence, a pure spin polarized current which belongs to spin down is obtained. It is shown that, for temperatures above the threshold temperature spin down current increases with the increasing temperature up to 75 K and then decreases. But spin up current rises steadily and in the high temperature we can obtain polarized spin up current. In addition, we show an acceptable spin current around the room temperature for ZGeNR. The transmission peaks in ZGeNR which are closer to the Fermi level rather than Zigzag Graphene Nanoribbon (ZGNRS) which causes ZGeNR to have spin current at higher temperatures. Finally, it is indicated that by tuning the back gate voltage, the spin current can be completely modulated and polarized. Simulation results verify the Zigzag Germanene Nanoribbon as a promising candidate for spin caloritronics devices, which can be applied in future low power consumption technology.

Hot-spot heating in central-station arrays

NASA Technical Reports Server (NTRS)

Gonzalez, C. C.

1983-01-01

Hot spot tests performed on the Sacramento Municipal Utility District (SMUD) verificaton array show that current imbalance occurs, resulting in significant hot spot heating. One cause of current imbalance is differences in the average shunt resistances of parallel cell strings due to cell shunt resistance variations. In depth hot spot tests are performed on the verification array with bypass diodes. The tests had several objectives: (1) a comparison of hot spot temperatures achieved under field conditions with those obtained with the present laboratory hot spot test using similar modules; (2) an assessment of current imbalance versus cross tie frequency; and (3) an assessment of different shadow patterns and shadow densities. Instrumented modules are used to vary the number of cross ties and to measure the test-cell current and back-bias voltage. The widths, lengths, and densities of the shadows are varied to maximize the back bias voltage at maximum power current. An infrared camera is used to indicate the existence of hot spots and estimate temperature increases in conjunction with thermocouples. The results of these hot spot tests indicate a sensitivity of back bias heating to the shadow size (amount of cell coverage) and density.

Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Hwang, Ihn; Wang, Wei; Hwang, Sun Kak; Cho, Sung Hwan; Kim, Kang Lib; Jeong, Beomjin; Huh, June; Park, Cheolmin

2016-05-01

The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 104, a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period.The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 104, a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00505e

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors.

PubMed

Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

2016-10-11

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this 'electrical activation', the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

Properties of the surface generation-recombination noise in 1.94 μm GaSb-based laser diodes

NASA Astrophysics Data System (ADS)

Glemža, Justinas; Palenskis, Vilius; Pralgauskaitė, Sandra; Vyšniauskas, Juozas; Matukas, Jonas

2018-06-01

A detail investigation of generation-recombination (g-r) noise in 1.94 μm GaSb-based type-I ridge waveguide laser diodes (LDs) has been performed in a temperature range (230-295) K. Lorentzian-type noise spectra have been observed in the current range below the threshold at the forward and reverse biases of the LDs with the same characteristic time (3.7 μs) and activation energy (≈0.37 eV) of charge carriers transitions associated with the g-r processes. An equivalent electrical circuit possessing the voltage noise source is presented, which allows the description of both the current-voltage characteristic and the voltage fluctuation spectral density of the laser diode. Results indicate that the origin of the g-r noise in the investigated samples is the surface recombination caused by the surface leakage current channel between n+GaSb and p+GaSb contacts, which is practically independent from the applied bias polarity.

Control of resting membrane potential by delayed rectifier potassium currents in ferret airway smooth muscle cells.

PubMed Central

Fleischmann, B K; Washabau, R J; Kotlikoff, M I

1993-01-01

1. In order to determine the physiological role of specific potassium currents in airway smooth muscle, potassium currents were measured in freshly dissociated ferret trachealis cells using the nystatin-permeabilized, whole-cell method, at 35 degrees C. 2. The magnitude of the outward currents was markedly increased as bath temperature was increased from 22 to 35 degrees C. This increase was primarily due to the increase in maximum potassium conductance (gK,max), although there was also a small leftward shift in the relationship between gK and voltage at higher temperatures. The maximum conductance and the kinetics of current activation and inactivation were also temperature dependent. At 35 degrees C, gating of the current was steeply voltage dependent between -40 and 0 mV. Current activation was well fitted by fourth-order kinetics; the mean time constants of activation (30 mV clamp step) were 1.09 +/- 0.17 and 1.96 +/- 0.27 ms at 35 and 22 degrees C, respectively. 3. Outward currents using the nystatin method were qualitatively similar to delayed rectifier currents recorded in dialysed cells with high calcium buffering capacity solutions. 4-Aminopyridine (4-AP; 2 mM), a specific blocker of delayed rectifier potassium channels in this tissue, inhibited over 80% of the outward current evoked by voltage-clamp steps to between -10 and +20 mV (n = 6). Less than 5% of the outward current was blocked over the same voltage range by charybdotoxin (100 nM; n = 15), a specific antagonist of large-conductance, calcium-activated potassium channels in this tissue. 4. The degree to which delayed rectifier and calcium-activated potassium conductances control resting membrane potential was examined in current-clamp experiments. The resting membrane potential of current clamped cells was -33.6 +/- 1.0 mV (n = 62). Application of 4-AP (2 mM) resulted in a 14.4 +/- 1.0 mV depolarization (n = 8) and an increase in input resistance. Charybdotoxin (100 nM) had no effect on resting membrane potential (n = 6). 5. Force measurements were made in isolated strips of trachealis muscle to determine the effect of pharmacological blockade of individual potassium conductances on resting tone. In the presence of tetrodotoxin (1 microM) and atropine (1 microM), 4-AP increased baseline tension in a dose-dependent manner, with an EC50 of 1.8 mM (n = 13); application of 5 mM 4-AP increased tone to 86.8 +/- 8.1% of that produced by 1 microM methacholine, and this tone was almost completely inhibited by nifedipine (1 microM).(ABSTRACT TRUNCATED AT 400 WORDS) PMID:8271220

Effect of high power CO2 and Yb:YAG laser radiation on the characteristics of TIG arc in atmospherical pressure argon and helium

NASA Astrophysics Data System (ADS)

Wu, Shikai; Xiao, Rongshi

2015-04-01

The effects of laser radiation on the characteristics of the DC tungsten inert gas (TIG) arc were investigated by applying a high power slab CO2 laser and a Yb:YAG disc laser. Experiment results reveal that the arc voltage-current curve shifts downwards, the arc column expands, and the arc temperature rises while the high power CO2 laser beam vertically interacts with the TIG arc in argon. With the increase of the laser power, the voltage-current curve of the arc shifts downwards more significantly, and the closer the laser beam impingement on the arc to the cathode, the more the decrease in arc voltage. Moreover, the arc column expansion and the arc temperature rise occur mainly in the region between the laser beam incident position and the anode. However, the arc characteristics hardly change in the cases of the CO2 laser-helium arc and YAG laser-arc interactions. The reason is that the inverse Bremsstrahlung absorption coefficients are greatly different due to the different electron densities of the argon and helium arcs and the different wave lengths of CO2 and YAG lasers.

Voltage stress induced reversible diode behavior in pentacene thin films

NASA Astrophysics Data System (ADS)

Murdey, Richard; Sato, Naoki

2012-12-01

The current-voltage characteristics of a vacuum-deposited 100 nm pentacene thin film have been measured in situ under ultrahigh vacuum. Despite using bottom contact geometry with titanium for both electrodes, the I-V curves are asymmetric and the direction and degree of the diode-like behavior vary with sample and measurement history. After careful examination we have found that applying a high positive or negative bias voltage for about 24 h at elevated temperatures was sufficient to completely switch the diode forward direction. The switching action is fully reversible and the diode behavior, once switched, remains stable to repeated measurements at least over a period of several weeks.

Performance analysis of resistive switching devices based on BaTiO3 thin films

NASA Astrophysics Data System (ADS)

Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

2016-03-01

Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

Tunnel magnetoresistance for coherent spin-flip processes on an interacting quantum dot.

PubMed

Rudziński, W

2009-01-28

Spin-polarized electronic tunneling through a quantum dot coupled to ferromagnetic electrodes is investigated within a nonequilibrium Green function approach. An interplay between coherent intradot spin-flip transitions, tunneling processes and Coulomb correlations on the dot is studied for current-voltage characteristics of the tunneling junction in parallel and antiparallel magnetic configurations of the leads. It is found that due to the spin-flip processes electric current in the antiparallel configuration tends to the current characteristics in the parallel configuration, thus giving rise to suppression of the tunnel magnetoresistance (TMR) between the threshold bias voltages at which the dot energy level becomes active in tunneling. Also, the effect of a negative differential conductance in symmetrical junctions, splitting of the conductance peaks, significant modulation of TMR peaks around the threshold bias voltages as well as suppression of the diode-like behavior in asymmetrical junctions is discussed in the context of coherent intradot spin-flip transitions. It is also shown that TMR may be inverted at selected gate voltages, which qualitatively reproduces the TMR behavior predicted recently for temperatures in the Kondo regime, and observed experimentally beyond the Kondo regime for a semiconductor InAs quantum dot coupled to nickel electrodes.

Advanced p-MOSFET Ionizing-Radiation Dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G.; Blaes, Brent R.

1994-01-01

Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.

APPARATUS FOR ELECTRON BEAM HEATING CONTROL

DOEpatents

Jones, W.H.; Reece, J.B.

1962-09-18

An improved electron beam welding or melting apparatus is designed which utilizes a high voltage rectifier operating below its temperature saturation region to decrease variations in electron beam current which normally result from the gas generated in such apparatus. (AEC)

A low temperature drift coefficient crystal-less frequency reference clock compensated by temperature sensor for microsystem

NASA Astrophysics Data System (ADS)

Gao, Zhiqiang; Wu, Ruixuan; Wang, Yuteng; Gao, Yuan; Liu, Xiaowei; Zhu, Jiaqi

2018-05-01

Quartz oscillator has been widely used as reference clock source in the microsystems due to its good performance. But a good crystal oscillator costs too much and its bulky size is not desired. This paper aims at designing an alternative integrated oscillator to replace the external quartz oscillator. The proposed circuit used maneatis delay cell to construct a ring oscillator for its superior linear I-V characteristic. As for a frequency reference clock, its frequency stability over temperature is required at first. After detailed mathematical deducing and careful analysis, a formula is proposed to describe the relationship between desired control voltage and temperature by assuming the frequency as constant. This paper utilized bipolar transistor as the temperature sensor, combining it with CTAT current source and resistor to create a first-order temperature compensation control voltage. The chip with typical frequency of 10 MHz was fabricated in a 0.35 μm CMOS technology and occupied 0.45 mm2. The measured results show that the frequency variation is ±0.2% for supply changes from 4.8 V to 5 V, and frequency variation is 48 ppm when the temperature change is from ‑40∘C to 85∘C, while the average current of the tested chip consumes 50 μA from 5 V.

Characterization of AC current sensor based on giant magnetoresistance and coil for power meter design

NASA Astrophysics Data System (ADS)

Dhani, H. S.; Aminudin, A.; Waslaluddin

2018-05-01

Electric current is the basic variable of measurement in instrumentation system. One of the current measurements had been developed was based on magnetic sensor. Giant Magnetoresistance (GMR) produces an output voltage when it detects the magnetic field from electric current flow. The purpose of this study was to characterize the response of GMR when variation number of coil was given. The characterization was the GMR voltage response to the AC current values from 0.01 A to 5.00 A. The linearity of the relation was reaching saturation point when the magnetic field measured higher than 10.5 Oe at room temperature. As the number of coil increased, the earlier saturation occurred. To see the sensitivity of the sensor response, the data graph was cut off at 1.56 A AC. From this research, we got single coil was ideal to measure electric current higher than 1.56 A AC, as the relation of GMR voltage to the current tended to maintain its linearity. For measurement of 1.56 A AC and less, coil number addition would increase the sensitivity of sensor response. This research hopefully will be benefit for further development using an electric current measurement based on GMR magnetic sensor for power meter design.

Powering of an HTS dipole insert-magnet operated standalone in helium gas between 5 and 85 K

NASA Astrophysics Data System (ADS)

van Nugteren, J.; Kirby, G.; Bajas, H.; Bajko, M.; Ballarino, A.; Bottura, L.; Chiuchiolo, A.; Contat, P.-A.; Dhallé, M.; Durante, M.; Fazilleau, P.; Fontalva, A.; Gao, P.; Goldacker, W.; ten Kate, H.; Kario, A.; Lahtinen, V.; Lorin, C.; Markelov, A.; Mazet, J.; Molodyk, A.; Murtomäki, J.; Long, N.; Perez, J.; Petrone, C.; Pincot, F.; de Rijk, G.; Rossi, L.; Russenschuck, S.; Ruuskanen, J.; Schmitz, K.; Stenvall, A.; Usoskin, A.; Willering, G.; Yang, Y.

2018-06-01

This paper describes the standalone magnet cold testing of the high temperature superconducting (HTS) magnet Feather-M2.1-2. This magnet was constructed within the European funded FP7-EUCARD2 collaboration to test a Roebel type HTS cable, and is one of the first high temperature superconducting dipole magnets in the world. The magnet was operated in forced flow helium gas with temperatures ranging between 5 and 85 K. During the tests a magnetic dipole field of 3.1 T was reached inside the aperture at a current of 6.5 kA and a temperature of 5.7 K. These values are in agreement with the self-field critical current of the used SuperOx cable assembled with Sunam tapes (low-performance batch), thereby confirming that no degradation occurred during winding, impregnation, assembly and cool-down of the magnet. The magnet was quenched many tens of times by ramping over the critical current and no degradation nor training was evident. During the tests the voltage over the coil was monitored in the microvolt range. An inductive cancellation wire was used to remove the inductive component, thereby significantly reducing noise levels. Close to the quench current, drift was detected both in temperature and voltage over the coil. This drifting happens in a time scale of minutes and is a clear indication that the magnet has reached its limit. All quenches happened approximately at the same average electric field and thus none of the quenches occurred unexpectedly.

"Fuel Gage" for Electric Vehicles

NASA Technical Reports Server (NTRS)

Rowlette, J. J.

1984-01-01

Gas-emmission and time-integrated-current measurements indicate battery charge state. Tests indicate possibility of monitoring state of charge of lead/acid batteries at any stage in charging cycle by measuring charging current and either gas evolution or electrode potential. Data then processed by microcomputer. Uses include cell voltage, cell pressure, cell temperature and rate of gas recombination on catalyst.

Photometric and Colorimetric Assessment of LED Chip Scale Packages by Using a Step-Stress Accelerated Degradation Test (SSADT) Method.

PubMed

Qian, Cheng; Fan, Jiajie; Fang, Jiayi; Yu, Chaohua; Ren, Yi; Fan, Xuejun; Zhang, Guoqi

2017-10-16

By solving the problem of very long test time on reliability qualification for Light-emitting Diode (LED) products, the accelerated degradation test with a thermal overstress at a proper range is regarded as a promising and effective approach. For a comprehensive survey of the application of step-stress accelerated degradation test (SSADT) in LEDs, the thermal, photometric, and colorimetric properties of two types of LED chip scale packages (CSPs), i.e., 4000 °K and 5000 °K samples each of which was driven by two different levels of currents (i.e., 120 mA and 350 mA, respectively), were investigated under an increasing temperature from 55 °C to 150 °C and a systemic study of driving current effect on the SSADT results were also reported in this paper. During SSADT, junction temperatures of the test samples have a positive relationship with their driving currents. However, the temperature-voltage curve, which represents the thermal resistance property of the test samples, does not show significant variance as long as the driving current is no more than the sample's rated current. But when the test sample is tested under an overdrive current, its temperature-voltage curve is observed as obviously shifted to the left when compared to that before SSADT. Similar overdrive current affected the degradation scenario is also found in the attenuation of Spectral Power Distributions (SPDs) of the test samples. As used in the reliability qualification, SSADT provides explicit scenes on color shift and correlated color temperature (CCT) depreciation of the test samples, but not on lumen maintenance depreciation. It is also proved that the varying rates of the color shift and CCT depreciation failures can be effectively accelerated with an increase of the driving current, for instance, from 120 mA to 350 mA. For these reasons, SSADT is considered as a suitable accelerated test method for qualifying these two failure modes of LED CSPs.

Photometric and Colorimetric Assessment of LED Chip Scale Packages by Using a Step-Stress Accelerated Degradation Test (SSADT) Method

PubMed Central

Yu, Chaohua; Fan, Xuejun; Zhang, Guoqi

2017-01-01

By solving the problem of very long test time on reliability qualification for Light-emitting Diode (LED) products, the accelerated degradation test with a thermal overstress at a proper range is regarded as a promising and effective approach. For a comprehensive survey of the application of step-stress accelerated degradation test (SSADT) in LEDs, the thermal, photometric, and colorimetric properties of two types of LED chip scale packages (CSPs), i.e., 4000 °K and 5000 °K samples each of which was driven by two different levels of currents (i.e., 120 mA and 350 mA, respectively), were investigated under an increasing temperature from 55 °C to 150 °C and a systemic study of driving current effect on the SSADT results were also reported in this paper. During SSADT, junction temperatures of the test samples have a positive relationship with their driving currents. However, the temperature-voltage curve, which represents the thermal resistance property of the test samples, does not show significant variance as long as the driving current is no more than the sample’s rated current. But when the test sample is tested under an overdrive current, its temperature-voltage curve is observed as obviously shifted to the left when compared to that before SSADT. Similar overdrive current affected the degradation scenario is also found in the attenuation of Spectral Power Distributions (SPDs) of the test samples. As used in the reliability qualification, SSADT provides explicit scenes on color shift and correlated color temperature (CCT) depreciation of the test samples, but not on lumen maintenance depreciation. It is also proved that the varying rates of the color shift and CCT depreciation failures can be effectively accelerated with an increase of the driving current, for instance, from 120 mA to 350 mA. For these reasons, SSADT is considered as a suitable accelerated test method for qualifying these two failure modes of LED CSPs. PMID:29035300

Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress

NASA Astrophysics Data System (ADS)

Huang, Xuanqi; Fu, Houqiang; Chen, Hong; Lu, Zhijian; Baranowski, Izak; Montes, Jossue; Yang, Tsung-Han; Gunning, Brendan P.; Koleske, Dan; Zhao, Yuji

2017-12-01

We investigate the thermal stability of InGaN solar cells under thermal stress at elevated temperatures from 400 °C to 500 °C. High Resolution X-Ray Diffraction analysis reveals that material quality of InGaN/GaN did not degrade after thermal stress. The external quantum efficiency characteristics of solar cells were well-maintained at all temperatures, which demonstrates the thermal robustness of InGaN materials. Analysis of current density-voltage (J-V) curves shows that the degradation of conversion efficiency of solar cells is mainly caused by the decrease in open-circuit voltage (Voc), while short-circuit current (Jsc) and fill factor remain almost constant. The decrease in Voc after thermal stress is attributed to the compromised metal contacts. Transmission line method results further confirmed that p-type contacts became Schottky-like after thermal stress. The Arrhenius model was employed to estimate the failure lifetime of InGaN solar cells at different temperatures. These results suggest that while InGaN solar cells have high thermal stability, the degradation in the metal contact could be the major limiting factor for these devices under high temperature operation.

Fabrication of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) Heterostructures and Study of Current-Voltage, Capacitance-Voltage and Room-Temperature Photoluminescence

NASA Astrophysics Data System (ADS)

Shah, M. A. H.; Khan, M. K. R.; Tanveer Karim, A. M. M.; Rahman, M. M.; Kamruzzaman, M.

2018-01-01

Heterojunction diodes of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) were fabricated by spray pyrolysis technique. X-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and field emission scanning electron microscopy (FESEM) were used to characterize the as-prepared samples. The XRD pattern indicates the hexagonal wurzite structure of zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films grown on Si (100) substrate. The compositional analysis by EDX indicates the presence of Al in the AZO structure. The FESEM image indicates the smooth and compact surface of the heterostructures. The current-voltage characteristics of the heterojunction confirm the rectifying diode behavior at different temperatures and illumination intensities. For low forward bias voltage, the ideality factors were determined to be 1.24 and 1.38 for un-doped and Al-doped heterostructures at room temperature (RT), respectively, which indicates the good diode characteristics. The capacitance-voltage response of the heterojunctions was studied for different oscillation frequencies. From the 1/ C 2- V plot, the junction built-in potentials were found 0.30 V and 0.40 V for un-doped and Al-doped junctions at RT, respectively. The differences in built-in potential for different heterojunctions indicate the different interface state densities of the junctions. From the RT photoluminescence (PL) spectrum of the n-ZnO/ p-Si (100) heterostructure, an intense main peak at near band edge (NBE) 378 nm (3.28 eV) and weak deep-level emissions (DLE) centered at 436 nm (2.84 eV) and 412 nm (3.00 eV) were observed. The NBE emission is attributed to the radiative recombination of the free and bound excitons and the DLE results from the radiative recombination through deep level defects.

High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors

NASA Astrophysics Data System (ADS)

Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Hsieh, Tien-Yu; Chen, Te-Chih; Lin, Kun-Yao; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

2013-07-01

This letter investigates the effect of temperature on hot-carrier stress-induced degradation behavior in InGaZnO thin film transistors. After hot-carrier stress at 25 °C, serious on-current and subthreshold swing degradations are observed due to trap state generation near the drain side. For identical stress performed at elevated temperatures, current degradation in the I-V transfer curve under reverse mode is gradually suppressed and the anomalous hump in the gate-to-drain capacitance-voltage curve becomes more severe. These suppressed degradations and the more severe hump can be both attributed to hole-trapping near the drain side due to high drain bias at high temperature.

Electron density and electron temperature measurement in a bi-Maxwellian electron distribution using a derivative method of Langmuir probes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Ikjin; Chung, ChinWook; Youn Moon, Se

2013-08-15

In plasma diagnostics with a single Langmuir probe, the electron temperature T{sub e} is usually obtained from the slope of the logarithm of the electron current or from the electron energy probability functions of current (I)-voltage (V) curve. Recently, Chen [F. F. Chen, Phys. Plasmas 8, 3029 (2001)] suggested a derivative analysis method to obtain T{sub e} by the ratio between the probe current and the derivative of the probe current at a plasma potential where the ion current becomes zero. Based on this method, electron temperatures and electron densities were measured and compared with those from the electron energymore » distribution function (EEDF) measurement in Maxwellian and bi-Maxwellian electron distribution conditions. In a bi-Maxwellian electron distribution, we found the electron temperature T{sub e} obtained from the method is always lower than the effective temperatures T{sub eff} derived from EEDFs. The theoretical analysis for this is presented.« less

Schottky junction interfacial properties at high temperature: A case of AgNWs embedded metal oxide/p-Si

NASA Astrophysics Data System (ADS)

Mahala, Pramila; Patel, Malkeshkumar; Gupta, Navneet; Kim, Joondong; Lee, Byung Ha

2018-05-01

Studying the performance limiting parameters of the Schottky device is an urgent issue, which are addressed herein by thermally stable silver nanowire (AgNW) embedded metal oxide/p-Si Schottky device. Temperature and bias dependent junction interfacial properties of AgNW-ITO/Si Schottky photoelectric device are reported. The current-voltage-temperature (I-V-T), capacitance-voltage-temperature (C-V-T) and impedance analysis have been carried out in the high-temperature region. The ideality factor and barrier height of Schottky junction are assessed using I-V-T characteristics and thermionic emission, to reveal the decrease of ideality factor and increase of barrier height by the increasing of temperature. The extracted values of laterally homogeneous Schottky (ϕb) and ideality factor (n) are approximately 0.73 eV and 1.58, respectively. Series resistance (Rs) assessed using Cheung's method and found that it decreases with the increase of temperature. A linear response of Rs of AgNW-ITO/Si Schottky junction is observed with respect to change in forward bias, i.e. dRS/dV from 0 to 0.7 V is in the range of 36.12-36.43 Ω with a rate of 1.44 Ω/V. Impedance spectroscopy is used to study the effect of bias voltage and temperature on intrinsic Schottky properties which are responsible for photoconversion efficiency. These systematic analyses are useful for the AgNWs-embedding Si solar cells or photoelectrochemical cells.

Fabrication of Double Layered Hybrid Solar Cells Consisting of Low-Temperature Anatase Titanium Oxide and Conducting Polymer

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Takamizawa, Yuta; Miyairi, Keiichi

2008-01-01

We have prepared a photovoltaic device consisting of poly[2-methoxy,5-(2'-ethyl-hexyloxy)-p-phenylenevinylene] (MEHPPV) and an n-type crystalline TiO2 (anatase) thin film by high-temperature process and low-temperature process at a temperature lower than 150 °C by sol-gel techniques. The refluxed sol of titanium-tetraisopropoxide (TTI) with water and nitric acid formed anatase phase TiO2 without requiring the high-temperature process, and the wettability of sol is successfully improved by diluting sol with ethanol. The short circuit current JSC, fill factor, and the power conversion efficiency increase with the heat-treatment temperature of TiO2, which is attributed to the improvement of series resistance of the TiO2 film. On the other hand, the open circuit voltage remains almost constant (ca. 1.0 V) with the change in heat-treatment temperature between 60 and 120 °C, whereas it decreases to 0.76 V in the device prepared on the TiO2 film sintered at 500 °C, probably owing to the change in crystallinity. The origin of open circuit voltage in indium tin oxide (ITO)/TiO2/MEHPPV/Au is also discussed. The open circuit voltage corresponds well to the energy difference of the conduction band edge of TiO2 and the highest occupied molecular orbital (HOMO) of MEHPPV (ca. 1 eV) in the device consisting of the ITO/low-temperature TiO2/MEHPPV/Au system.

Powder free PECVD epitaxial silicon by plasma pulsing or increasing the growth temperature

NASA Astrophysics Data System (ADS)

Chen, Wanghua; Maurice, Jean-Luc; Vanel, Jean-Charles; Cabarrocas, Pere Roca i.

2018-06-01

Crystalline silicon thin films are promising candidates for low cost and flexible photovoltaics. Among various synthesis techniques, epitaxial growth via low temperature plasma-enhanced chemical vapor deposition is an interesting choice because of two low temperature related benefits: low thermal budget and better doping profile control. However, increasing the growth rate is a tricky issue because the agglomeration of clusters required for epitaxy leads to powder formation in the plasma. In this work, we have measured precisely the time evolution of the self-bias voltage in silane/hydrogen plasmas at millisecond time scale, for different values of the direct-current bias voltage applied to the radio frequency (RF) electrode and growth temperatures. We demonstrate that the decisive factor to increase the epitaxial growth rate, i.e. the inhibition of the agglomeration of plasma-born clusters, can be obtained by decreasing the RF OFF time or increasing the growth temperature. The influence of these two parameters on the growth rate and epitaxial film quality is also presented.

Principle and experimental investigation of current-driven negative-inductance superconducting quantum interference device

NASA Astrophysics Data System (ADS)

Li, Hao; Liu, Jianshe; Zhang, Yingshan; Cai, Han; Li, Gang; Liu, Qichun; Han, Siyuan; Chen, Wei

2017-03-01

A negative-inductance superconducting quantum interference device (nSQUID) is an adiabatic superconducting logic device with high energy efficiency, and therefore a promising building block for large-scale low-power superconducting computing. However, the principle of the nSQUID is not that straightforward and an nSQUID driven by voltage is vulnerable to common mode noise. We investigate a single nSQUID driven by current instead of voltage, and clarify the principle of the adiabatic transition of the current-driven nSQUID between different states. The basic logic operations of the current-driven nSQUID with proper parameters are simulated by WRspice. The corresponding circuit is fabricated with a 100 A cm-2 Nb-based lift-off process, and the experimental results at low temperature confirm the basic logic operations as a gated buffer.

Mechanism of Carrier Transport in Hybrid GaN/AlN/Si Solar Cells

NASA Astrophysics Data System (ADS)

Ekinci, Huseyin; Kuryatkov, Vladimir V.; Gherasoiu, Iulian; Karpov, Sergey Y.; Nikishin, Sergey A.

2017-10-01

The particularities of the carrier transport in p- n-GaN/ n-AlN/ p- n-Si and n-GaN/ n-AlN /p- n-Si structures were investigated through temperature-dependent current density and forward voltage ( J- V) measurements, carrier distribution, and transport modeling. Despite the insulating properties of AlN, reasonably high current densities were achieved under forward bias. The experimental relationship between the current density and forward voltage was accurately approximated by an expression accounting for space-charge-limited current in the AlN layer and non-linear characteristics of the p- n junction formed in silicon. We suggest that extended defects throughout the AlN volume are responsible for the conduction, although the limited data available do not allow the accurate identification of the type of these defects.

Preliminary Development and Testing of a Self-Injecting Gallium MPD Thruster

NASA Technical Reports Server (NTRS)

Thomas, Robert E.; Burton, Rodney L.; Polzin, Kurt A.

2008-01-01

Discharge current and terminal voltage measurements were performed on a gallium electromagnetic thruster at discharge currents in the range of 20-54 kA. It was found that the arc impedance has a value of 6-7 m(Omega) at peak current. The absence of high-frequency oscillations in the terminal voltage trace indicates lack of the "onset" condition often seen in MPD arcs, suggesting that a sufficient number of charge carriers are present for current conduction. The mass ablated per pulse was not measured experimentally; however the mass flow rate was calculated using an ion current assumption and an anode power balance. Measurement of arc impedance predicts a temperature of 3.5 eV which from Saha equilibrium corresponds to Z = 2.0 - 3.5, and assuming Z = 2 yields an Isp of 3000 s and thrust efficiency of 50%.

An easy way to measure accurately the direct magnetoelectric voltage coefficient of thin film devices

NASA Astrophysics Data System (ADS)

Poullain, Gilles; More-Chevalier, Joris; Cibert, Christophe; Bouregba, Rachid

2017-01-01

TbxDy1-xFe2/Pt/Pb(Zrx, Ti1-x)O3 thin films were grown on Pt/TiO2/SiO2/Si substrate by multi-target sputtering. The magnetoelectric voltage coefficient αΗΜΕ was determined at room temperature using a lock-in amplifier. By adding, in series in the circuit, a capacitor of the same value as that of the device under test, we were able to demonstrate that the magnetoelectric device behaves as a voltage source. Furthermore, a simple way to subtract the stray voltage arising from the flow of eddy currents in the measurement set-up, is proposed. This allows the easy and accurate determination of the true magnetoelectric voltage coefficient. A large αΗΜΕ of 8.3 V/cm. Oe was thus obtained for a Terfenol-D/Pt/PZT thin film device, without DC magnetic field nor mechanical resonance.

High Voltage Design Concepts for Launch Vehicles and Orbital Spacecraft Applications

NASA Technical Reports Server (NTRS)

Hall, David K.; Kirkici, Hulya; Hillard, G. Barry; Schweickart, Daniel; Dunbar, Bill

2000-01-01

With the advent of design concepts such as, electromechanical actuation and "more electric" initiatives, has come the need for electrical power buses and electronic equipment to operate at higher than normal dc voltages to meet power requirements while keeping current levels to manageable levels. This new bus voltage has been typically 270 Volts dc nominal for launch vehicles, and 120 Volt dc for the International Space Station. This paper will discuss the new design applications for high voltage dc power in existing and future launch vehicles and spacecraft and the potential problems associated therewith. These new applications must be operational from lift-off, ascent, on orbit and descent in all of the pressure and temperature conditions for each, i.e. through the "Paschen region" twice. This paper will also attempt to stimulate an interest in the academic and professional communities to support and conduct research needed for design data applicable to high voltage dc usage.

Electrical properties of fullerenol C60(OH)10/Au interface

NASA Astrophysics Data System (ADS)

Sakaino, Masamichi; Sun, Yong; Morimoto, Fumio

2014-01-01

Electrical properties of the C60(OH)10/Au contact have been studied by measuring its current-voltage characteristics in the temperature range of 300-500 K. The Schottky barrier of the C60(OH)10/Au contact was confirmed to be 0.70±0.02 eV from Arrhenius plots of the current-voltage characteristics measured at various bias voltages as well as various preparation conditions of the C60(OH)10 material. Significant effect of the applied electric field on the barrier height has not been observed in the range of 0.1-2.0 MVm-1. The effects of both the charge transfer from C60 cage to OH groups and the crystallinity of the C60(OH)10 material on the Schottky barrier were discussed on the basis of x-ray photoemission spectroscopy and x-ray diffraction analyses.

A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System.

PubMed

Pérez-Bailón, Jorge; Márquez, Alejandro; Calvo, Belén; Medrano, Nicolás

2018-05-02

This paper presents a fully integrated 0.18 μm CMOS Low-Dropout (LDO) Voltage Regulator specifically designed to meet the stringent requirements of a battery-operated impedance spectrometry multichannel CMOS micro-instrument. The proposed LDO provides a regulated 1.8 V voltage from a 3.6 V to 1.94 V battery voltage over a −40 °C to 100 °C temperature range, with a compact topology (<0.10 mm² area) and a constant quiescent current of only 7.45 μA with 99.985% current efficiency, achieving remarkable state-of-art Figures of Merit (FoMs) for the regulating⁻transient performance. Experimental measurements validate its suitability for the target application, paving the way towards the future achievement of a truly portable System on Chip (SoC) platform for impedance sensors.

Instability of Insulators near Quantum Phase Transitions

NASA Astrophysics Data System (ADS)

Doron, A.; Tamir, I.; Levinson, T.; Ovadia, M.; Sacépé, B.; Shahar, D.

2017-12-01

Thin films of amorphous indium oxide undergo a magnetic field driven superconducting to insulator quantum phase transition. In the insulating phase, the current-voltage characteristics show large current discontinuities due to overheating of electrons. We show that the onset voltage for the discontinuities vanishes as we approach the quantum critical point. As a result, the insulating phase becomes unstable with respect to any applied voltage making it, at least experimentally, immeasurable. We emphasize that unlike previous reports of the absence of linear response near quantum phase transitions, in our system, the departure from equilibrium is discontinuous. Because the conditions for these discontinuities are satisfied in most insulators at low temperatures, and due to the decay of all characteristic energy scales near quantum phase transitions, we believe that this instability is general and should occur in various systems while approaching their quantum critical point. Accounting for this instability is crucial for determining the critical behavior of systems near the transition.

Excess junction current of silicon solar cells

NASA Technical Reports Server (NTRS)

Wang, E. Y.; Legge, R. N.; Christidis, N.

1973-01-01

The current-voltage characteristics of n(plus)-p silicon solar cells with 0.1, 1.0, 2.0, and 10 ohm-cm p-type base materials have been examined in detail. In addition to the usual I-V measurements, we have studied the temperature dependence of the slope of the I-V curve at the origin by the lock-in technique. The excess junction current coefficient (Iq) deduced from the slope at the origin depends on the square root of the intrinsic carrier concentration. The Iq obtained from the I-V curve fitting over the entire forward bias region at various temperatures shows the same temperature dependence. This result, in addition to the presence of an aging effect, suggest that the surface channel effect is the dominant cause of the excess junction current.

Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods

NASA Astrophysics Data System (ADS)

Tiagulskyi, Stanislav; Yatskiv, Roman; Grym, Jan

2018-02-01

A rectifying junction was prepared by casting a drop of colloidal graphite on the surface of an InP substrate. The electrophysical properties of graphite/InP junctions were investigated in a wide temperature range. Temperature-dependent I-V characteristics of the graphite/InP junctions are explained by the thermionic emission mechanism. The Schottky barrier height (SBH) and the ideality factor were found to be 0.9 eV and 1.47, respectively. The large value of the SBH and its weak temperature dependence are explained by lateral homogeneity of the junction, which is related to the structure of the graphite layer. The moderate disagreement between the current-voltage and capacitance-voltage measurements is attributed to the formation of interfacial native oxide film on the InP surface.

H-terminated diamond field effect transistor with ferroelectric gate insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karaya, Ryota; Furuichi, Hiroki; Nakajima, Takashi

2016-06-13

An H-terminated diamond field-effect-transistor (FET) with a ferroelectric vinylidene fluoride (VDF)-trifluoroethylene (TrFE) copolymer gate insulator was fabricated. The VDF-TrFE film was deposited on the H-terminated diamond by the spin-coating method and low-temperature annealing was performed to suppress processing damage to the H-terminated diamond surface channel layer. The fabricated FET structure showed the typical properties of depletion-type p-channel FET and showed clear saturation of the drain current with a maximum value of 50 mA/mm. The drain current versus gate voltage curves of the proposed FET showed clockwise hysteresis loops due to the ferroelectricity of the VDF-TrFE gate insulator, and the memory windowmore » width was 19 V, when the gate voltage was swept from 20 to −20 V. The maximum on/off current ratio and the linear mobility were 10{sup 8} and 398 cm{sup 2}/V s, respectively. In addition, we modulated the drain current of the fabricated FET structure via the remnant polarization of the VDF-TrFE gate and obtained an on/off current ratio of 10{sup 3} without applying a DC gate voltage.« less

Development of a low-energy and high-current pulsed neutral beam injector with a washer-gun plasma source for high-beta plasma experiments.

PubMed

Ii, Toru; Gi, Keii; Umezawa, Toshiyuki; Asai, Tomohiko; Inomoto, Michiaki; Ono, Yasushi

2012-08-01

We have developed a novel and economical neutral-beam injection system by employing a washer-gun plasma source. It provides a low-cost and maintenance-free ion beam, thus eliminating the need for the filaments and water-cooling systems employed conventionally. In our primary experiments, the washer gun produced a source plasma with an electron temperature of approximately 5 eV and an electron density of 5 × 10(17) m(-3), i.e., conditions suitable for ion-beam extraction. The dependence of the extracted beam current on the acceleration voltage is consistent with space-charge current limitation, because the observed current density is almost proportional to the 3/2 power of the acceleration voltage below approximately 8 kV. By optimizing plasma formation, we successfully achieved beam extraction of up to 40 A at 15 kV and a pulse length in excess of 0.25 ms. Its low-voltage and high-current pulsed-beam properties enable us to apply this high-power neutral beam injection into a high-beta compact torus plasma characterized by a low magnetic field.

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Trapp, Scott

2003-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Temperature dependence of carrier transport and resistance switching in Pt/SrTi1-xNbxO3 Schottky junctions

NASA Astrophysics Data System (ADS)

Li, Jianyong; Ohashi, Naoki; Okushi, Hideyo; Haneda, Hajime

2011-03-01

We investigated the temperature dependence of carrier transport and resistance switching of Pt/SrTi1-xNbxO3 Schottky junctions in the temperature range 80-400 K by measuring the current-voltage (I-V) characteristics and the frequency dependence of the capacitance-voltage (C-V) characteristics. The I-V curves displayed a high degree of hysteresis, known as the colossal electroresistance (CER) effect, and their temperature dependence showed an anomalous behavior, i.e., the magnitude of the hysteresis increased with decreasing T. The experimental results were analyzed by taking into account the temperature and electric-field dependence of the relative permittivity of SrTi1-xNbxO3 as well as the inhomogeneity of the Schottky barrier height (SBH) (a model in which two parallel current paths coexist in the Schottky barrier). It was confirmed that the observed I-V and C-V curves were well simulated by this model, thus indicating that the CER effects originated in the field emission current through different SBHs and at different locations of the Schottky junctions. Based on these results, we explain the mechanism of the CER effect qualitatively in terms of this model. For this purpose, we take into account the pinched-off effect caused by the small-scale inhomogeneity of SBH and the existence of deep levels as a result of defects and unintentional impurities in the depletion layer of the Pt/SrTi1-xNbxO3 Schottky junctions.

Analysis of wall-embedded Langmuir probe signals in different conditions on the Tokamak à Configuration Variable

NASA Astrophysics Data System (ADS)

Février, O.; Theiler, C.; De Oliveira, H.; Labit, B.; Fedorczak, N.; Baillod, A.

2018-05-01

This paper presents the current wall-embedded Langmuir probe system installed on the Tokamak à Configuration Variable (TCV), as well as the analysis tool chain used to interpret the current-voltage characteristic obtained when the probes are operated in swept-bias conditions. The analysis is based on a four-parameter fit combined with a minimum temperature approach. In order to reduce the effect of plasma fluctuations and measurement noise, several current-voltage characteristics are usually averaged before proceeding to the fitting. The impact of this procedure on the results is investigated, as well as the possible role of finite resistances in the circuitry, which could lead to an overestimation of the temperature. We study the application of the procedure in a specific regime, the plasma detachment, where results from other diagnostics indicate that the electron temperature derived from the Langmuir probes might be overestimated. To address this issue, we explore other fitting models and, in particular, an extension of the asymmetric double probe fit, which features effects of sheath expansion. We show that these models yield lower temperatures (up to approximately 60%) than the standard analysis in detached conditions, particularly for a temperature peak observed near the plasma strike point, but a discrepancy with other measurements remains. We explore a possible explanation for this observation, the presence of a fast electron population, and assess how robust the different methods are in such conditions.

Improved analysis techniques for cylindrical and spherical double probes.

PubMed

Beal, Brian; Johnson, Lee; Brown, Daniel; Blakely, Joseph; Bromaghim, Daron

2012-07-01

A versatile double Langmuir probe technique has been developed by incorporating analytical fits to Laframboise's numerical results for ion current collection by biased electrodes of various sizes relative to the local electron Debye length. Application of these fits to the double probe circuit has produced a set of coupled equations that express the potential of each electrode relative to the plasma potential as well as the resulting probe current as a function of applied probe voltage. These equations can be readily solved via standard numerical techniques in order to determine electron temperature and plasma density from probe current and voltage measurements. Because this method self-consistently accounts for the effects of sheath expansion, it can be readily applied to plasmas with a wide range of densities and low ion temperature (T(i)/T(e) ≪ 1) without requiring probe dimensions to be asymptotically large or small with respect to the electron Debye length. The presented approach has been successfully applied to experimental measurements obtained in the plume of a low-power Hall thruster, which produced a quasineutral, flowing xenon plasma during operation at 200 W on xenon. The measured plasma densities and electron temperatures were in the range of 1 × 10(12)-1 × 10(17) m(-3) and 0.5-5.0 eV, respectively. The estimated measurement uncertainty is +6%∕-34% in density and +∕-30% in electron temperature.

Characteristics of temperature rise in variable inductor employing magnetorheological fluid driven by a high-frequency pulsed voltage source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Ho-Young; Kang, In Man, E-mail: imkang@ee.knu.ac.kr; Shon, Chae-Hwa

2015-05-07

A variable inductor with magnetorheological (MR) fluid has been successfully applied to power electronics applications; however, its thermal characteristics have not been investigated. To evaluate the performance of the variable inductor with respect to temperature, we measured the characteristics of temperature rise and developed a numerical analysis technique. The characteristics of temperature rise were determined experimentally and verified numerically by adopting a multiphysics analysis technique. In order to accurately estimate the temperature distribution in a variable inductor with an MR fluid-gap, the thermal solver should import the heat source from the electromagnetic solver to solve the eddy current problem. Tomore » improve accuracy, the B–H curves of the MR fluid under operating temperature were obtained using the magnetic property measurement system. In addition, the Steinmetz equation was applied to evaluate the core loss in a ferrite core. The predicted temperature rise for a variable inductor showed good agreement with the experimental data and the developed numerical technique can be employed to design a variable inductor with a high-frequency pulsed voltage source.« less

Computers in the General Physics Laboratory.

ERIC Educational Resources Information Center

Preston, Daryl W.; Good, R. H.

1996-01-01

Provides ideas and outcomes for nine computer laboratory experiments using a commercial eight-bit analog to digital (ADC) interface. Experiments cover statistics; rotation; harmonic motion; voltage, current, and resistance; ADC conversions; temperature measurement; single slit diffraction; and radioactive decay. Includes necessary schematics. (MVL)

Study on the mechanism of Si-glass-Si two step anodic bonding process

NASA Astrophysics Data System (ADS)

Hu, Lifang; Wang, Hao; Xue, Yongzhi; Shi, Fangrong; Chen, Shaoping

2018-04-01

Si-glass-Si was successfully bonded together through a two-step anodic bonding process. The bonding current in each step of the two-step bonding process was investigated, and found to be quite different. The first bonding current decreased quickly to a relatively small value, but for the second bonding step, there were two current peaks; the current first decreased, then increased, and then decreased again. The second current peak occurred earlier with higher temperature and voltage. The two-step anodic bonding process was investigated in terms of bonding current. SEM and EDS tests were conducted to investigate the interfacial structure of the Si-glass-Si samples. The two bonding interfaces were almost the same, but after an etching process, transitional layers could be found in the bonding interface and a deeper trench with a thickness of ~1.5 µm could be found in the second bonding interface. Atomic force microscopy mapping results indicated that sodium precipitated from the back of the glass, which makes the roughness of the surface become coarse. Tensile tests indicated that the fracture occurred at the glass substrate and that the bonding strength increased with the increment of bonding temperature and voltage with the maximum strength of 6.4 MPa.

Degradation of Leakage Currents in Solid Tantalum Capacitors Under Steady-State Bias Conditions

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2010-01-01

Degradation of leakage currents in various types of solid tantalum capacitors under steady-state bias conditions was investigated at temperatures from 105 oC to 170 oC and voltages up to two times the rated voltage. Variations of leakage currents with time under highly accelerated life testing (HALT) and annealing, thermally stimulated depolarization currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. During HALT the currents increase gradually up to three orders of magnitude in some cases, and then stabilize with time. This degradation is reversible and annealing can restore the initial levels of leakage currents. The results are attributed to migration of positively charged oxygen vacancies in tantalum pentoxide films that diminish the Schottky barrier at the MnO2/Ta2O5 interface and increase electron injection. A simple model allows for estimation of concentration and mobility of oxygen vacancies based on the level of current degradation.

The design of high precision temperature control system for InGaAs short-wave infrared detector

NASA Astrophysics Data System (ADS)

Wang, Zheng-yun; Hu, Yadong; Ni, Chen; Huang, Lin; Zhang, Aiwen; Sun, Xiao-bing; Hong, Jin

2018-02-01

The InGaAs Short-wave infrared detector is a temperature-sensitive device. Accurate temperature control can effectively reduce the background signal and improve detection accuracy, detection sensitivity, and the SNR of the detection system. Firstly, the relationship between temperature and detection background, NEP is analyzed, the principle of TEC and formula between cooling power, cooling current and hot-cold interface temperature difference are introduced. Then, the high precision constant current drive circuit based on triode voltage control current, and an incremental algorithm model based on deviation tracking compensation and PID control are proposed, which effectively suppresses the temperature overshoot, overcomes the temperature inertia, and has strong robustness. Finally, the detector and temperature control system are tested. Results show that: the lower of detector temperature, the smaller the temperature fluctuation, the higher the detection accuracy and the detection sensitivity. The temperature control system achieves the high temperature control with the temperature control rate is 7 8°C/min and the temperature fluctuation is better than +/-0. 04°C.

Interaction of ICRF Fields with the Plasma Boundary in AUG and JET and Guidelines for Antenna Optimization

NASA Astrophysics Data System (ADS)

Bobkov, V.; Bilato, R.; Braun, F.; Colas, L.; Dux, R.; Van Eester, D.; Giannone, L.; Goniche, M.; Herrmann, A.; Jacquet, P.; Kallenbach, A.; Krivska, A.; Lerche, E.; Mayoral, M.-L.; Milanesio, D.; Monakhov, I.; Müller, H. W.; Neu, R.; Noterdaeme, J.-M.; Pütterich, Th.; Rohde, V.

2009-11-01

W sputtering during ICRF on ASDEX Upgrade (AUG) and temperature rise on JET A2 antenna septa are considered in connection with plasma conditions at the antenna plasma facing components and E‖ near-fields. Large antenna-plasma clearance, high gas puff and low light impurity content are favorable to reduce W sputtering in AUG. The spatial distribution of spectroscopically measured effective W sputtering yields clearly points to the existence of strong E‖ fields at the antenna box ("feeder fields") which dominate over the fields in front of the antenna straps. The picture of E‖ fields, obtained by HFSS code, corroborates the dominant role of E‖ at the antenna box on the formation of sheath-driving RF voltages for AUG. Large antenna-plasma clearance and low gas puff are favorable to reduce septum temperature of JET A2 antennas. Assuming a linear relation between the septum temperature and the sheath driving RF voltage calculated by HFSS, the changes of the temperature with dipole phasing (00ππ, 0ππ0 or 0π0π) are well described by the related changes of the RF voltages. Similarly to the AUG antenna, the strongest E‖ are found at the limiters of the JET A2 antenna for all used dipole phasings and at the septum for the phasings different from 0π0π. A simple general rule can be used to minimize E‖ at the antenna: image currents can be allowed only at the surfaces which do not intersect magnetic field lines at large angles of incidence. Possible antenna modifications generally rely either on a reduction of the image currents, on their short-circuiting by introducing additional conducting surfaces or on imposing the E‖ = 0 boundary condition. On the example of AUG antenna, possible options to minimize the sheath driving voltages are presented.

Time-evolution of photon heat current through series coupled two mesoscopic Josephson junction devices

NASA Astrophysics Data System (ADS)

Lu, Wen-Ting; Zhao, Hong-Kang; Wang, Jian

2018-03-01

Photon heat current tunneling through a series coupled two mesoscopic Josephson junction (MJJ) system biased by dc voltages has been investigated by employing the nonequilibrium Green’s function approach. The time-oscillating photon heat current is contributed by the superposition of different current branches associated with the frequencies of MJJs ω j (j = 1, 2). Nonlinear behaviors are exhibited to be induced by the self-inductance, Coulomb interaction, and interference effect relating to the coherent transport of Cooper pairs in the MJJs. Time-oscillating pumping photon heat current is generated in the absence of temperature difference, while it becomes zero after time-average. The combination of ω j and Coulomb interactions in the MJJs determines the concrete heat current configuration. As the external and intrinsic frequencies ω j and ω 0 of MJJs match some specific combinations, resonant photon heat current exhibits sinusoidal behaviors with large amplitudes. Symmetric and asymmetric evolutions versus time t with respect to ω 1 t and ω 2 t are controlled by the applied dc voltages of V 1 and V 2. The dc photon heat current formula is a special case of the general time-dependent heat current formula when the bias voltages are settled to zero. The Aharonov-Bohm effect has been investigated, and versatile oscillation structures of photon heat current can be achieved by tuning the magnetic fluxes threading through separating MJJs.

Experimental Investigation of a Broadband High-Temperature Superconducting Terahertz Mixer Operating at Temperatures Between 40 and 77 K

NASA Astrophysics Data System (ADS)

Gao, Xiang; Du, Jia; Zhang, Ting; Jay Guo, Y.; Foley, Cathy P.

2017-11-01

This paper presents a systematic investigation of a broadband thin-film antenna-coupled high-temperature superconducting (HTS) terahertz (THz) harmonic mixer at relatively high operating temperature from 40 to 77 K. The mixer device chip was fabricated using the CSIRO established step-edge YBa2Cu3O7-x (YBCO) Josephson junction technology, packaged in a well-designed module and cooled in a temperature adjustable cryocooler. Detailed experimental characterizations were carried out for the broadband HTS mixer at both the 200 and 600 GHz bands in harmonic mixing mode. The DC current-voltage characteristics (IVCs), bias current condition, local oscillator (LO) power requirement, frequency response, as well as conversion efficiency under different bath temperatures were thoroughly investigated for demonstrating the frequency down-conversion performance.

A fully automated temperature-dependent resistance measurement setup using van der Pauw method

NASA Astrophysics Data System (ADS)

Pandey, Shivendra Kumar; Manivannan, Anbarasu

2018-03-01

The van der Pauw (VDP) method is widely used to identify the resistance of planar homogeneous samples with four contacts placed on its periphery. We have developed a fully automated thin film resistance measurement setup using the VDP method with the capability of precisely measuring a wide range of thin film resistances from few mΩ up to 10 GΩ under controlled temperatures from room-temperature up to 600 °C. The setup utilizes a robust, custom-designed switching network board (SNB) for measuring current-voltage characteristics automatically at four different source-measure configurations based on the VDP method. Moreover, SNB is connected with low noise shielded coaxial cables that reduce the effect of leakage current as well as the capacitance in the circuit thereby enhancing the accuracy of measurement. In order to enable precise and accurate resistance measurement of the sample, wide range of sourcing currents/voltages are pre-determined with the capability of auto-tuning for ˜12 orders of variation in the resistances. Furthermore, the setup has been calibrated with standard samples and also employed to investigate temperature dependent resistance (few Ω-10 GΩ) measurements for various chalcogenide based phase change thin films (Ge2Sb2Te5, Ag5In5Sb60Te30, and In3SbTe2). This setup would be highly helpful for measurement of temperature-dependent resistance of wide range of materials, i.e., metals, semiconductors, and insulators illuminating information about structural change upon temperature as reflected by change in resistances, which are useful for numerous applications.

Unipolar memristive Switching in Bulk Negative Temperature Coefficient Thermosensitive Ceramics

PubMed Central

Wu, Hongya; Cai, Kunpeng; Zhou, Ji; Li, Bo; Li, Longtu

2013-01-01

A memristive phenomenon was observed in macroscopic bulk negative temperature coefficient nickel monoxide (NiO) ceramic material. Current-voltage characteristics of memristors, pinched hysteretic loops were systematically observed in the Ag/NiO/Ag cell. A thermistor-based model for materials with negative temperature coefficient was proposed to explain the mechanism of the experimental phenomena. Most importantly, the results demonstrate the potential for a realization of memristive systems based on macroscopic bulk materials. PMID:24255717

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhi, Ting; Tao, Tao; Liu, Bin, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn

Through investigating the temperature dependent current-voltage (T-I-V) properties of GaN based blue and green LEDs in this study, we propose an asymmetric tunneling model to understand the leakage current below turn-on voltage (V < 3.2 V): At the forward bias within 1.5 V ∼ 2.1 V (region 1), the leakage current is main attributed to electrons tunneling from the conduction band of n-type GaN layer to the valence band of p-type GaN layer via defect states in space-charge region (SCR); While, at the forward bias within 2 V ∼ 2.4 V (region 2), heavy holes tunneling gradually becomes dominant atmore » low temperature (T < 200K) as long as they can overcome the energy barrier height. The tunneling barrier for heavy holes is estimated to be lower than that for electrons, indicating the heavy holes might only tunnel to the defect states. This asymmetric tunneling model shows a novel carrier transport process, which provides better understanding of the leakage characteristics and is vital for future device improvements.« less

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.

PubMed

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-12-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N 2 -based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H 2 /NH 3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V DSQ ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V th ), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

Mechanism of a-IGZO TFT device deterioration—illumination light wavelength and substrate temperature effects

NASA Astrophysics Data System (ADS)

Chen, Te-Chih; Kuo, Yue; Chang, Ting-Chang; Chen, Min-Chen; Chen, Hua-Mao

2017-10-01

Device characteristics changes in an a-IGZO thin film transistor under light illumination and at raised temperature have been investigated. Light exposure causes a large leakage current, which is more obvious with an increase in the illumination energy, power and the temperature. The increase in the leakage current is due to the trap assisted photon excitation process that generates electron-hole pairs and the mechanism is enhanced with the additional thermal energy. The leakage current comes from the source side because holes generated in the process drift to the source side and therefore lower the barrier height. The above mechanism has been further verified with experiments of drain bias induced shifts in the threshold voltage and the subthreshold slope.

Effect of Light Intensity and Temperature on the Current Voltage Characteristics of Al/ SY/ p- Si Organic-Inorganic Heterojunction

NASA Astrophysics Data System (ADS)

Imer, Arife Gencer; Ocak, Yusuf Selim

2016-10-01

An organic-inorganic contact was fabricated by forming a thin film of sunset yellow dye ( SY) on a p- Si wafer. The device showed a good rectification property, and the sunset yellow thin film modified the barrier height (Φb) of Al/ p- Si contact by influencing the space charge region. The heterojunction had a strong response to the different illumination intensities and showed that it can be suitable for photodiode applications. The I- V measurements of the device were also applied in the temperature range of 100-500 K. It was seen that characteristic parameters of the device were strongly dependent upon temperature. While the value of Φb increased, the ideality factor ( n) decreased with the increase in temperature. This variation was attributed to spatial inhomogeneity at the interface. The Norde function was used to determine the temperature-dependent series resistance and Φb values, and there was a good agreement with that of ln I- V data. The values of the Richardson constant ( A*) and mean Φb were determined as 29.47 Acm-2 K-2 by means of a modified activation energy plot, matching with a theoretical one, and 1.032 eV, respectively. Therefore, it was stated that the current voltage characteristic with the temperature can be explained by thermionic emission theory with Gaussian distribution of the Φb at the interface.

Effect of ambient temperature on the efficiency of the PCPDTBT: PC71BM BHJ solar cells

NASA Astrophysics Data System (ADS)

Ahmad, Zubair; Touati, Farid; Muhammad, Fahmi F.; Najeeb, Mansoor Ani; Shakoor, R. A.

2017-07-01

In this research article, the influence of environment temperature on the performance of the organic bulk heterojunction organic solar cells has been investigated. We describe the effect of ambient temperature on the efficiency of poly-[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta-[2,1-b;3,4-b']dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT) and [6, 6]-phenylC71-butyric-acid-methyl-ester (PC71BM)-based bulk heterojunction (BHJ) organic solar cells. The current-voltage characteristics of the ITO/PEDOT:PSS/PCPDTBT:PC71BM/Al solar cells are recorded in the temperature range of 25-60 °C under 100 mW/cm2 solar irradiation. The short-circuit current ( J sc) of the solar cells increased from 4.28 to 9.23 mAcm-2 when the temperature elevated from 25 to 55 °C. However, the open-circuit voltage ( V oc) and fill factor (FF) of the cells almost remained unchanged over the whole investigated temperature range. The values of V oc and FF are found to be 0.58 ± 01 and 0.60 ± 0.12 V, respectively. The results clearly indicate that the maximum efficiency of the ITO/PEDOT:PSS/PCPDTBT:PC71BM/Al solar cells can be achieved in the range of 52-58 °C.

Contribution of the backstreaming ions to the self-magnetic pinch (SMP) diode current

NASA Astrophysics Data System (ADS)

Mazarakis, Michael G.; Bennett, Nichelle; Cuneo, Michael E.; Fournier, Sean D.; Johnston, Mark D.; Kiefer, Mark L.; Leckbee, Joshua J.; Nielsen, Dan S.; Oliver, Bryan V.; Sceiford, Matthew E.; Simpson, Sean C.; Renk, Timothy J.; Ruiz, Carlos L.; Webb, Timothy J.; Ziska, Derek; Droemer, Darryl W.; Gignac, Raymond E.; Obregon, Robert J.; Wilkins, Frank L.; Welch, Dale R.

2018-04-01

The results presented here were obtained with a self-magnetic pinch (SMP) diode mounted at the front high voltage end of the RITS accelerator. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulse of six 1.3 MV inductively insulated cavities. The RITS driver together with the SMP diode has produced x-ray spots of the order of 1 mm in diameter and doses adequate for the radiographic imaging of high area density objects. Although, through the years, a number of different types of radiographic electron diodes have been utilized with SABER, HERMES III and RITS accelerators, the SMP diode appears to be the most successful and simplest diode for the radiographic investigation of various objects. Our experiments had two objectives: first to measure the contribution of the back-streaming ion currents emitted from the anode target and second to try to evaluate the energy of those ions and hence the Anode-Cathode (A-K) gap actual voltage. In any very high voltage inductive voltage adder utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the A-K gap is problematic. This is even more difficult in an SMP diode where the A-K gap is very small (˜1 cm) and the diode region very hostile. The accelerating voltage quoted in the literature is from estimates based on the measurements of the anode and cathode currents of the MITL far upstream from the diode and utilizing the para-potential flow theories and inductive corrections. Thus, it would be interesting to have another independent measurement to evaluate the A-K voltage. The diode's anode is made of a number of high-Z metals in order to produce copious and energetic flash x-rays. It was established experimentally that the back-streaming ion currents are a strong function of the anode materials and their stage of cleanness. We have measured the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatment: namely, heating at very high temperatures with DC and pulsed current, with RF plasma cleaning, and with both plasma cleaning and heating. We have also evaluated the A-K gap voltage by energy filtering technique. Experimental results in comparison with LSP simulations are presented.

A gas sensor comprising two back-to-back connected Au/TiO2 Schottky diodes

NASA Astrophysics Data System (ADS)

Dehghani, Niloofar; Yousefiazari, Ehsan

2018-04-01

A miniature, but sturdy, gas sensor capable of operation at temperatures as high as 600 °C is presented. The device comprises two back-to-back connected gold/rutile Schottky diodes, which are fabricated on the opposite bases of a self-standing 100 μm-thick pellet of polycrystalline rutile. The rutile layer is formed by the direct oxidation of titanium metal in air at 900 °C, and the Au/rutile diodes are formed by the diffusion bonding of the gold wire segments to the pellet bases. The current versus voltage diagrams and gas sensing properties of the Au/rutile/Au structured device are recorded at different voltage sweeping frequencies and operating temperatures. The interesting features of these diagrams are explained based on an equivalent circuit of the device, which considers Schottky-type contacts at both bases and memristive conduction for the rutile in between. The device current is controlled by the leakage current of the reverse biased diode, which depends on the concentration of the oxygen vacancy at the Au/rutile interface and, hence, on the composition of the surrounding atmosphere. The device current increases 15 times in response to the presence of 1000 ppm of ethanol vapor in air. Consisting only of bulk gold and bulk rutile, the device is resilient to harsh environments and elevated temperatures; a suitable gas sensor for in-exhaust installation.

Interaction of high voltage surfaces with the space plasma

NASA Technical Reports Server (NTRS)

Kaufman, H. R.; Robinson, R. S.

1980-01-01

High voltage solar arrays provide spacecraft power while optimizing mass and power efficiency. Operating such arrays in the space plasma environment can result in anomalously large currents being collected through insulation defects. Two thicknesses of the insulating material were tested, with no effect found due to insulator thickness. In these tests the polyimide thickness was always much less than the pinhole diameter. The pinhole area was varied over an area range of more than 30:1. It was found that the current collected was independent of the pinhole area for hole diameters from 0.35 to 2.0 mm. Two types of adhesives were tried in two different configurations. The adhesives were chosen for their extreme difference in vacuum qualifications. Neither adhesive types nor configuration made a significant difference in current collection. The temperature of the insulating material was also varied. It was found that current collection decreased with increasing temperature. Tests were conducted to see if pinhole current collection decreased with time, as was indicated by the effects of several short tests. Current was collected for over four hours while the conductor potential was held constant at 1000 volts. A smooth decrease with time was not observed, but rather a roughly constant current collection with brief surges to high values. Tests were also conducted with the simulated solar cell biased negative. The current was found to be proportional to pinhole area.

Depinning of the Bragg glass in a point disordered model superconductor.

PubMed

Olsson, Peter

2007-03-02

We perform simulations of the three-dimensional frustrated anisotropic XY model with point disorder as a model of a type-II superconductor with quenched point pinning in a magnetic field and a weak applied current. Using resistively shunted junction dynamics, we find a critical current I_{c} that separates a creep region with immeasurably low voltage from a region with a voltage V proportional, variant(I-I_{c}) and also identify the mechanism behind this behavior. It also turns out that data at fixed disorder strength may be collapsed by plotting V versus TI, where T is the temperature, though the reason for this behavior as yet not is fully understood.

Effect of cathode cooling efficiency and oxygen plasma gas pressure on the hafnium cathode wall temperature

NASA Astrophysics Data System (ADS)

Ashtekar, Koustubh; Diehl, Gregory; Hamer, John

2012-10-01

The hafnium cathode is widely used in DC plasma arc cutting (PAC) under an oxygen gas environment to cut iron and iron alloys. The hafnium erosion is always a concern which is controlled by the surface temperature. In this study, the effect of cathode cooling efficiency and oxygen gas pressure on the hafnium surface temperature are quantified. The two layer cathode sheath model is applied on the refractive hafnium surface while oxygen species (O2, O, O+, O++, e-) are considered within the thermal dis-equilibrium regime. The system of non-linear equations comprising of current density balance, heat flux balance at both the cathode surface and the sheath-ionization layer is coupled with the plasma gas composition solver. Using cooling heat flux, gas pressure and current density as inputs; the cathode wall temperature, electron temperature, and sheath voltage drop are calculated. Additionally, contribution of emitted electron current (Je) and ions current (Ji) to the total current flux are estimated. Higher gas pressure usually reduces Ji and increases Je that reduces the surface temperature by thermionic cooling.

A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition.

PubMed

Dong, Kaichen; Choe, Hwan Sung; Wang, Xi; Liu, Huili; Saha, Bivas; Ko, Changhyun; Deng, Yang; Tom, Kyle B; Lou, Shuai; Wang, Letian; Grigoropoulos, Costas P; You, Zheng; Yao, Jie; Wu, Junqiao

2018-04-01

Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously. Here 0.2 V MEM switching devices with ≳10 6 safe operating cycles in ambient air are reported, which achieve the lowest operating voltage in mechanical switches without body bias reported to date. The ultralow operating voltage is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide (VO 2 ) slightly above room temperature. The phase-transition MEM switches open possibilities for sub 1 V hybrid integrated devices/circuits/systems, as well as ultralow power consumption sensors for Internet of Things applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fifteen cm mercury ion thruster research, 1976. [performance as effected by the use of shag optics at 33 v discharge voltage

NASA Technical Reports Server (NTRS)

Wilbur, P. J.

1976-01-01

Improvements in 15 cm diameter, SERT II, mercury ion thruster performance effected by the use of SHAG optics at 33 V discharge voltage were discussed. At a 200 eV/ion discharge power, 90 percent propellant utilization and 660 mA beam current condition a doubly-to-singly charged ion current ratio of about 4 percent was measured. Performance of the 15 cm multipole mercury thruster (optimized for length and the point of electron injection) was compared to that of divergent (SERT II) and cusped field designs and found to be comparable. The need for a magnetic baffle in the multipole thruster was identified and the preferred point of electron injection was at the upstream end of the discharge chamber. Results of preliminary tests on the effects of discharge voltage and total accelerating voltage on perveance and beam divergence characteristics of two grid ion optics were examined. Experimental data showing the effect of target temperature on sputtering rates in a mercury discharge environment were presented and a deficiency in the tests procedure was identified.

Electrical Properties of a p-n Heterojunction of Li-Doped NiO and Al-Doped ZnO for Thermoelectrics

NASA Astrophysics Data System (ADS)

Desissa, Temesgen D.; Schrade, Matthias; Norby, Truls

2018-06-01

The electrical properties of a p-n heterojunction of polycrystalline p-type Ni0.98Li0.02O and n-type Zn0.98Al0.02O have been investigated for potential applications in high-temperature oxide-based thermoelectric generators without metallic interconnects. Current-voltage characteristics of the junction were measured in a two-electrode setup in ambient air at 500-1000°C. The resistance and rectification of the junction decreased with increasing temperature. A non-ideal Shockley diode model was used to fit the measured current-voltage data in order to extract characteristic parameters of the junction, such as area-specific series resistance R s and parallel shunt resistance R p, non-ideality factor, and the saturation current density. R s and R p decreased exponentially with temperature, with activation energies of 0.4 ± 0.1 eV and 1.1 ± 0.2 eV, respectively. The interface resistance of the direct p-n junction studied here is as such too high for practical applications in thermoelectrics. However, it is demonstrated that it can be reduced by an order of magnitude by using a composite of the individual materials at the interface, yielding a large effective contact area.

Experimental study of low-temperature plasma of electrical discharges with liquid electrodes

NASA Astrophysics Data System (ADS)

Zheltukhin, Viktor; Gaisin, Almaz

2016-09-01

Results of the experimental research of discharge between the liquid jet cathode (LJC) and the metal anode are presented. The discharge was studied over the voltage range U = 100 - 600 V, discharge current range I = 0 . 1 - 0 . 25 A, external pressure range P =105 Pa, discharge power Pd = 10 - 150 W. We used the techniques of infrared thermography and spectral measurements. Schlieren's photography is applied for describing the processes in liquid and gas phase. Results of the experimental researches of discharge current-voltage characteristic (CVC), the surface temperature distribution both on the LJC and the metal anode, a spectral measurements are showed. Effects of action both of breakdown and discharge on the jet flow as well as on the air flow near the discharge are described. It is found that the discharge CVC has an ascending behavior due to increase of plasma current density. The discharge is generated on the borders between the LJC and the metal anode as well as along the LJC misshaping this one. It is established that both the convection streams and an electrolyte drops are formed during the discharge burn. It is found that the discharge temperature in the vicinity of electrode surface reaches T 348 K. The work was funded by RFBR, according to the research projects No.,14-01-0755.

40 CFR 53.55 - Test for effect of variations in power line voltage and ambient temperature.

Code of Federal Regulations, 2010 CFR

2010-07-01

... measurement accuracy. (iv) Coefficient of variability measurement accuracy. (v) Ambient air temperature... line voltage and ambient temperature. 53.55 Section 53.55 Protection of Environment ENVIRONMENTAL... power line voltage and ambient temperature. (a) Overview. (1) This test procedure is a combined...

Topologically protected charge transfer along the edge of a chiral p -wave superconductor

NASA Astrophysics Data System (ADS)

Gnezdilov, N. V.; van Heck, B.; Diez, M.; Hutasoit, Jimmy A.; Beenakker, C. W. J.

2015-09-01

The Majorana fermions propagating along the edge of a topological superconductor with px+i py pairing deliver a shot noise power of 1/2 ×e2/h per eV of voltage bias. We calculate the full counting statistics of the transferred charge and find that it becomes trinomial in the low-temperature limit, distinct from the binomial statistics of charge-e transfer in a single-mode nanowire or charge-2 e transfer through a normal-superconductor interface. All even-order correlators of current fluctuations have a universal quantized value, insensitive to disorder and decoherence. These electrical signatures are experimentally accessible, because they persist for temperatures and voltages large compared to the Thouless energy.

LOW TEMPERATURE EFFECTS ON HIGH VOLTAGE BREAKDOWN AT SMALL GAPS. PART I

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeGeeter, D.J.

1962-05-16

Experiments were performed that examined the effect of electrode cooling on breakdown. Cooling the cathode to liquid N/sub 2/ temperature reduced the d-c electron current, thereby increasing the voltage breakdown value. Tests involving cooling of only one electrode indicated that only the cathode was affected. Cooling was found to be of probable value if the flaking problem were removed when the cathode has a high field region. The data indicated that breakdown would not necessarily be improved for all electrode geometries, especially when the data do not approach the Trump-Van de Graaff curve against which the data were plotted. Effectsmore » of electrode polishing and outgassing were also studied. (D.C.W.)« less

Interface-state density estimation of n-type nanocrystalline FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Nopparuchikun, Adison; Promros, Nathaporn; Sittimart, Phongsaphak; Onsee, Peeradon; Duangrawa, Asanlaya; Teakchaicum, Sakmongkon; Nogami, Tomohiro; Yoshitake, Tsuyoshi

2017-09-01

By utilizing pulsed laser deposition (PLD), heterojunctions comprised of n-type nanocrystalline (NC) FeSi2 thin films and p-type Si substrates were fabricated at room temperature in this study. Both dark and illuminated current density-voltage (J-V) curves for the heterojunctions were measured and analyzed at room temperature. The heterojunctions demonstrated a large reverse leakage current as well as a weak near-infrared light response. Based on the analysis of the dark forward J-V curves, at the V value  ⩽  0.2 V, we show that a carrier recombination process was governed at the heterojunction interface. When the V value was  >  0.2 V, the probable mechanism of carrier transportation was a space-charge limited-current process. Both the measurement and analysis for capacitance-voltage-frequency (C-V-f ) and conductance-voltage-frequency (G-V-f ) curves were performed in the applied frequency (f ) range of 50 kHz-2 MHz at room temperature. From the C-V-f and G-V-f curves, the density of interface states (N ss) for the heterojunctions was computed by using the Hill-Coleman method. The N ss values were 9.19  ×  1012 eV-1 cm-2 at 2 MHz and 3.15  ×  1014 eV-1 cm-2 at 50 kHz, which proved the existence of interface states at the heterojunction interface. These interface states are the probable cause of the degraded electrical performance in the heterojunctions. Invited talk at 5th Thailand International Nanotechnology Conference (Nano Thailand-2016), 27-29 November 2016, Nakhon Ratchasima, Thailand.

Analysis on temperature dependent current mechanism of tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Lee, Junil; Kwon, Dae Woong; Kim, Hyun Woo; Kim, Jang Hyun; Park, Euyhwan; Park, Taehyung; Kim, Sihyun; Lee, Ryoongbin; Lee, Jong-Ho; Park, Byung-Gook

2016-06-01

In this paper, the total drain current (I D) of a tunnel FET (TFET) is decomposed into each current component with different origins to analyze the I D formation mechanisms of the TFET as a function of gate voltage (V GS). Transfer characteristics are firstly extracted with fabricated Silicon channel TFETs (Si TFETs) and silicon germanium channel TFETs (SiGe TFETs) at various temperatures. The subthreshold swings (SS) of both Si TFETs and SiGe TFETs get degraded and the SSs of SiGe TFETs get degraded more as temperature becomes higher. Then, all the I Ds measured at various temperatures are decomposed into each current component through technology computer aided design (TCAD) simulations with a good agreement with experimental data. As a result, it is revealed that Shockley-Read-Hall (SRH) recombination mainly contribute to the I D of a TFET before band to band tunneling (BTBT) occurs. Furthermore, the SS degradation by high temperature is explained successfully by the SRH recombination with electric field dependence.

Voltage-dependent Ca2+ release from the SR of feline ventricular myocytes is explained by Ca2+-induced Ca2+ release

PubMed Central

Piacentino, Valentino; Dipla, Konstantina; Gaughan, John P; Houser, Steven R

2000-01-01

Direct voltage-gated (voltage-dependent Ca2+ release, VDCR) and Ca2+ influx-gated (Ca2+-induced Ca2+ release, CICR) sarcoplasmic reticulum (SR) Ca2+ release were studied in feline ventricular myocytes. The voltage-contraction relationship predicted by the VDCR hypothesis is sigmoidal with large contractions at potentials near the Ca2+ equilibrium potential (ECa). The relationship predicted by the CICR hypothesis is bell-shaped with no contraction at ECa. The voltage dependence of contraction was measured in ventricular myocytes at physiological temperature (37 °C), resting membrane potential and physiological [K+]. Experiments were performed with cyclic adenosine 3′,5′-monophosphate (cAMP) in the pipette or in the presence of the β-adrenergic agonist isoproterenol (isoprenaline; ISO). The voltage-contraction relationship was bell-shaped in Na+-free solutions (to eliminate the Na+ current and Na+-Ca2+ exchange, NCX) but the relationship was broader than the L-type Ca2+ current (ICa,L)-voltage relationship. Contractions induced with voltage steps from normal resting potentials to -40 mV are thought to represent VDCR rather than CICR. We found that cAMP and ISO shifted the voltage dependence of ICa,L activation to more negative potentials so that ICa,L was always present with steps to -40 mV. ICa,L at -40 mV inactivated when the holding potential was decreased (V½ =−57·8 ± 0·49 mV). ISO increased inward current, SR Ca2+ load and contraction in physiological [Na+] and a broad bell-shaped voltage-contraction relationship was observed. Inhibition of reverse-mode NCX, decreasing ICa,L and decreasing SR Ca2+ loading all decreased contractions at strongly positive potentials near ECa. The voltage-contraction relationship in 200 μM cadmium (Cd2+) was bell-shaped, supporting a role of ICa,L rather than VDCR. All results could be accounted for by the CICR hypothesis, and many results exclude the VDCR hypothesis. PMID:10718736

Photoelectric peculiarities and theoretical analysis of properties of thin semiconductor PbS films prepared by new spray method

NASA Astrophysics Data System (ADS)

Alyoshin, Alexey N.; Burlak, Alexander V.; Pasternak, Valeriy A.; Tyurin, Alexander V.

1997-08-01

PbS-based optical sensors are sensitive in the IR-region of the spectra and are important for a lot of applications in optoelectronic field. Photoelectric properties of thin polycrystal PbS films prepared by a new spray method have ben investigated. This method allows of a smooth change in the dosage of oxidant concentration in the initial solutions, which influences the parameters and characteristics of produced samples. Large scale temperature dependencies of dark and photo currents, volt-watt and volt- ampere characteristics, electron beam microscopy of films surface were investigated. A very low value of relaxation time of photoexcitation is the characteristic property of the prepared films. Volt-ampere characteristics of the dark current are superlinear at high voltage, and, in case of photo current, have a section of the negative differential conductivity. Calculated are the reduced chemical potentials for holes and electrons and its concentrations n, p and degeneration criteria (eta) i for a row of temperatures: 4.2K, 77 K, 300 K. It was shown, that a hole gas is degenerated at low temperatures and particularly degenerated at room temperatures. Suggested is a model that explains experimental results by means of a concept of degeneration areas in 'noes' of inverse channels net and tunneling of minor carriers through oxidant barriers on crystallite borders. Furthermore, a diffusion length 1 and a transparency D for oxidant interlayers were calculated for different temperatures in accordance with barrier model. The tunnel component of dark current as a function of the supplied voltage was calculated theoretically. Analytical dependencies correlate well with experimental results.

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

NASA Astrophysics Data System (ADS)

Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

2016-10-01

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

PubMed Central

Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

2016-01-01

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully. PMID:27725695

Van der Waals heterojunction diode composed of WS2 flake placed on p-type Si substrate

NASA Astrophysics Data System (ADS)

Aftab, Sikandar; Farooq Khan, M.; Min, Kyung-Ah; Nazir, Ghazanfar; Afzal, Amir Muhammad; Dastgeer, Ghulam; Akhtar, Imtisal; Seo, Yongho; Hong, Suklyun; Eom, Jonghwa

2018-01-01

P-N junctions represent the fundamental building blocks of most semiconductors for optoelectronic functions. This work demonstrates a technique for forming a WS2/Si van der Waals junction based on mechanical exfoliation. Multilayered WS2 nanoflakes were exfoliated on the surface of bulk p-type Si substrates using a polydimethylsiloxane stamp. We found that the fabricated WS2/Si p-n junctions exhibited rectifying characteristics. We studied the effect of annealing processes on the performance of the WS2/Si van der Waals p-n junction and demonstrated that annealing improved its electrical characteristics. However, devices with vacuum annealing have an enhanced forward-bias current compared to those annealed in a gaseous environment. We also studied the top-gate-tunable rectification characteristics across the p-n junction interface in experiments as well as density functional theory calculations. Under various temperatures, Zener breakdown occurred at low reverse-bias voltages, and its breakdown voltage exhibited a negative coefficient of temperature. Another breakdown voltage was observed, which increased with temperature, suggesting a positive coefficient of temperature. Therefore, such a breakdown can be assigned to avalanche breakdown. This work demonstrates a promising application of two-dimensional materials placed directly on conventional bulk Si substrates.

Analog parameters of solid source Zn diffusion In X Ga1-X As nTFETs down to 10 K

NASA Astrophysics Data System (ADS)

Bordallo, C.; Martino, J. A.; Agopian, P. G. D.; Alian, A.; Mols, Y.; Rooyackers, R.; Vandooren, A.; Verhulst, A. S.; Smets, Q.; Simoen, E.; Claeys, C.; Collaert, N.

2016-12-01

The analog parameters of In0.53Ga0.47As and In0.7Ga0.3As nTFETs with solid state Zn diffused source are investigated from room temperature down to 10 K. The In0.7Ga0.3As devices are shown to yield a higher on-state current than the In0.53Ga0.47As counterparts, and, consequently, a higher transconductance due to the lower bandgap. At the same time, the In0.7Ga0.3As devices present higher output conductance values. The balance between these two factors results in a higher intrinsic voltage gain (A V) for In0.7Ga0.3As nTFETs at low gate bias and similar A V for both devices at high gate voltage. The transconductance is reduced at low temperature due to the increase of the bandgap, while the output conductance is decreased (improved) upon cooling, which is related to the reduction of the drain dependence of the BTBT generation rate. The temperature influence is more pronounced in the output conductance than in the transconductance, resulting in an increase of the intrinsic voltage gain at low temperatures for both devices and bias.

Study on VCSEL laser heating chip in nuclear magnetic resonance gyroscope

NASA Astrophysics Data System (ADS)

Liang, Xiaoyang; Zhou, Binquan; Wu, Wenfeng; Jia, Yuchen; Wang, Jing

2017-10-01

In recent years, atomic gyroscope has become an important direction of inertial navigation. Nuclear magnetic resonance gyroscope has a stronger advantage in the miniaturization of the size. In atomic gyroscope, the lasers are indispensable devices which has an important effect on the improvement of the gyroscope performance. The frequency stability of the VCSEL lasers requires high precision control of temperature. However, the heating current of the laser will definitely bring in the magnetic field, and the sensitive device, alkali vapor cell, is very sensitive to the magnetic field, so that the metal pattern of the heating chip should be designed ingeniously to eliminate the magnetic field introduced by the heating current. In this paper, a heating chip was fabricated by MEMS process, i.e. depositing platinum on semiconductor substrates. Platinum has long been considered as a good resistance material used for measuring temperature The VCSEL laser chip is fixed in the center of the heating chip. The thermometer resistor measures the temperature of the heating chip, which can be considered as the same temperature of the VCSEL laser chip, by turning the temperature signal into voltage signal. The FPGA chip is used as a micro controller, and combined with PID control algorithm constitute a closed loop control circuit. The voltage applied to the heating resistor wire is modified to achieve the temperature control of the VCSEL laser. In this way, the laser frequency can be controlled stably and easily. Ultimately, the temperature stability can be achieved better than 100mK.

Experimental Study of Hydroxy Gas (HHO) Production with Variation in Current, Voltage and Electrolyte Concentration

NASA Astrophysics Data System (ADS)

Alam, Noor; Pandey, K. M.

2017-08-01

In this paper, work has been carried out experimentally for the investigation of the effects of variation incurrent, voltage, temperature, chemical concentration and reaction time on the amount of hydroxy gas produced. Further effects on the overall electrolysis efficiency of advance alkaline water is also studied. The hydroxy gas (HHO) has been produced experimentally by the electrolysis of alkaline water with parallel plate electrode of 316L-grade stainless steel. The electrode has been selected on the basis of corrosion resistance and inertness with respect to electrolyte (KOH). The process used for the production of HHO is conventional as compared to the other production processes because of reduced energy consumption, less maintenance and low setup cost. From the experimental results, it has been observed that with increase in voltage, temperature and electrolyte concentration of alkaline solution, the production of hydroxy gas has increased about 30 to 40% with reduction in electrical energy consumption.

Temporal resistance variation of the second generation HTS tape during superconducting-to-normal state transition.

PubMed

Malginov, Vladimir A; Malginov, Andrey V; Fleishman, Leonid S

2013-01-01

The quench process in high-temperature superconducting (HTS) wires plays an important role in superconducting power devices, such as fault current limiters, magnets, cables, etc. The superconducting device should survive after the overheating due to quench. We studied the evolution of the resistance of the YBCO tape wire during the quench process with 1 ms time resolution for various excitation voltages. The resistive normal zone was found to be located in a domain of about 1-4 cm long. The normal state nucleation begins in 40-60 ms after voltage is applied across the HTS tape. In subsequent 200-300 ms other normal state regions appear. The normal domain heating continues in the following 5-10s that results in a factor of 2-3 increase of its resistance. Formation of the normal domain during the quench process follows the same stages for different excitation voltages. Characteristic domain sizes, lifetimes and temperatures are determined for all stages.

Josephson coupling between superconducting islands on single- and bi-layer graphene

NASA Astrophysics Data System (ADS)

Mancarella, Francesco; Fransson, Jonas; Balatsky, Alexander

2016-05-01

We study the Josephson coupling of superconducting (SC) islands through the surface of single-layer graphene (SLG) and bilayer graphene (BLG) in the long-junction regime, as a function of the distance between the grains, temperature, chemical potential and external (transverse) gate-voltage. For SLG, we provide a comparison with existing literature. The proximity effect is analyzed through a Matsubara Green’s function approach. This represents the first step in a discussion of the conditions for the onset of a granular superconductivity within the film, made possible by Josephson currents flowing between superconductors. To ensure phase coherence over the 2D sample, a random spatial distribution can be assumed for the SC islands on the SLG sheet (or intercalating the BLG sheets). The tunable gate-voltage-induced band gap of BLG affects the asymptotic decay of the Josephson coupling-distance characteristic for each pair of SC islands in the sample, which results in a qualitatively strong field dependence of the relation between Berezinskii-Kosterlitz-Thouless transition critical temperature and gate voltage.

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.; Ponchak, George E.

2004-01-01

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony concentration was approximately 4 x 10(exp 19) per cubic centimeter. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per square centimeter, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V (sub DS)) range, with V (sub DS) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Precision control of multiple quantum cascade lasers for calibration systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taubman, Matthew S., E-mail: Matthew.Taubman@pnnl.gov; Myers, Tanya L.; Pratt, Richard M.

We present a precision, 1-A, digitally interfaced current controller for quantum cascade lasers, with demonstrated temperature coefficients for continuous and 40-kHz full-depth square-wave modulated operation, of 1–2 ppm/ °C and 15 ppm/ °C, respectively. High precision digital to analog converters (DACs) together with an ultra-precision voltage reference produce highly stable, precision voltages, which are selected by a multiplexer (MUX) chip to set output currents via a linear current regulator. The controller is operated in conjunction with a power multiplexing unit, allowing one of three lasers to be driven by the controller, while ensuring protection of controller and all lasers during operation, standby,more » and switching. Simple ASCII commands sent over a USB connection to a microprocessor located in the current controller operate both the controller (via the DACs and MUX chip) and the power multiplexer.« less

Precision Control of Multiple Quantum Cascade Lasers for Calibration Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taubman, Matthew S.; Myers, Tanya L.; Pratt, Richard M.

We present a precision, digitally interfaced current controller for quantum cascade lasers, with demonstrated DC and modulated temperature coefficients of 1- 2 ppm/ºC and 15 ppm/ºC respectively. High linearity digital to analog converters (DACs) together with an ultra-precision voltage reference, produce highly stable, precision voltages. These are in turn selected by a low charge-injection multiplexer (MUX) chip, which are then used to set output currents via a linear current regulator. The controller is operated in conjunction with a power multiplexing unit, allowing one of three lasers to be driven by the controller while ensuring protection of controller and all lasersmore » during operation, standby and switching. Simple ASCII commands sent over a USB connection to a microprocessor located in the current controller operate both the controller (via the DACs and MUX chip) and the power multiplexer.« less

Electrical switching in cadmium boracite single crystals

NASA Technical Reports Server (NTRS)

Takahashi, T.; Yamada, O.

1981-01-01

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

Controlling Hysteresis in Superconducting Weak Links and μ-Superconducting Quantum Interference Devices

NASA Astrophysics Data System (ADS)

Kumar, Nikhil; Winkelmann, C. B.; Biswas, Sourav; Courtois, H.; Gupta, Anjan K.

We have fabricated and studied the current-voltage characteristics of a number of niobium film based weak-link devices and μ-SQUIDs showing a critical current and two re-trapping currents. We have proposed a new understanding for the re-trapping currents in terms of thermal instabilities in different portions of the device. We also find that the superconducting proximity effect and the phase-slip processes play an important role in dictating the temperature dependence of the critical current in the non-hysteretic regime. The proximity effect helps in widening the temperature range of hysteresis-free characteristics. Finally we demonstrate control on temperature-range with hysteresis-free characteristics in two ways: 1) By using a parallel shunt resistor in close vicinity of the device, and 2) by reducing the weak-link width. Thus we get non-hysteretic behavior down to 1.3 K temperature in some of the studied devices. We acknowledge the financial support from CSIR, India as well as CNRS-Institute Neel, Grenoble, France.

Experimental study on the 300W class planar type solid oxide fuel cell stack: Investigation for appropriate fuel provision control and the transient capability of the cell performance

NASA Astrophysics Data System (ADS)

Komatsu, Y.; Brus, G.; Kimijima, S.; Szmyd, J. S.

2012-11-01

The present paper reports the experimental study on the dynamic behavior of a solid oxide fuel cell (SOFC). The cell stack consists of planar type cells with standard power output 300W. A Major subject of the present study is characterization of the transient response to the electric current change, assuming load-following operation. The present studies particularly focus on fuel provision control to the load change. Optimized fuel provision improves power generation efficiency. However, the capability of SOFC must be restricted by a few operative parameters. Fuel utilization factor, which is defined as the ratio of the consumed fuel to the supplied fuel is adopted for a reference in the control scheme. The fuel flow rate was regulated to keep the fuel utilization at 50%, 60% and 70% during the current ramping. Lower voltage was observed with the higher fuel utilization, but achieved efficiency was higher. The appropriate mass flow control is required not to violate the voltage transient behavior. Appropriate fuel flow manipulation can contribute to moderate the overshoot on the voltage that may appear to the current change. The overshoot on the voltage response resulted from the gradual temperature behavior in the SOFC stack module.

Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

PubMed

Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

2014-01-21

The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

Investigation of reliability attributes and accelerated stress factors of terrestrial solar cells. First annual report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prince, J.L.; Lathrop, J.W.

1979-05-01

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, I/sub sc/, open circuit voltage, V/sub oc/, and output power, voltage, and current at the maximum power point, P/sub m/, V/sub m/, and I/sub m/ respectively. Incorporated in the report are the distributions ofmore » the prestress electrical data for all cell types. Data was also obtained on cell series and shunt resistance. Significant differences in the response to the various stress tests was observed between cell types. On the basis of the experience gained in this research work, a suggested Reliability Qualification Test Schedule was developed.« less

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

PubMed Central

Shim, Jaewoo; Oh, Seyong; Kang, Dong-Ho; Jo, Seo-Hyeon; Ali, Muhammad Hasnain; Choi, Woo-Young; Heo, Keun; Jeon, Jaeho; Lee, Sungjoo; Kim, Minwoo; Song, Young Jae; Park, Jin-Hong

2016-01-01

Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research. PMID:27819264

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

NASA Astrophysics Data System (ADS)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

Direct Current Amplifier. Report No. 92; AMPLIFICADOR DE CORRIENTE CONTINUA. Informe No. 92

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marazzi, C.

1963-01-01

A direct-current amplifier with low zero current and solid-state chopper for input is described. This amplifier can be used in control circuits and for general applications such as temperature measurement in thermocouples, amplifier for a photo-sensitive element, or zero amplifier in control systems. The input impedance is relatively low, serving principally as current amplifier. It is possible to obtain a symmetry characteristic for positive and negative values of the output voltage with respect to the input. (tr-auth)

Tunneling barrier in nanoparticle junctions of La2/3(Ca,Sr)1/3MnO3: Nonlinear current-voltage characteristics

NASA Astrophysics Data System (ADS)

Niebieskikwiat, D.; Sánchez, R. D.; Lamas, D. G.; Caneiro, A.; Hueso, L. E.; Rivas, J.

2003-05-01

We study the nonlinear current-voltage (I-V) characteristics and analyze the voltage-dependent tunneling conductance in nanoparticles of La2/3A1/3MnO3 (A=Ca, Sr). The powders were prepared by different wet-chemical routes and low calcination temperatures were used to obtain an average particle size D≈30 nm. The data are comprehensively explained in terms of the tunneling picture, which allows one to estimate the height of the grain boundary insulating barrier (φ) for each sample. For constant D, our results show that the sample preparation route is mainly responsible for the value of φ in nanoparticles, while the Coulomb gap in the Coulomb blockade regime is ˜3 times higher for Sr- than for Ca-doping. We also show that a small fraction of the barriers contribute to the nonlinear transport, and the current is mainly carried through low-resistive percolated paths. In addition, despite the different barrier strengths, the low-field magnetoresistance (LFMR) is similar for all samples, implying that φ is not the fundamental parameter determining the LFMR.

Performance degradation of photovoltaic modules at different sites

NASA Astrophysics Data System (ADS)

Arab, A. Hadj; Mahammed, I. Hadj; Ould Amrouche, S.; Taghezouit, B.; Yassaa, N.

2018-05-01

In this work are presented results of electrical performance measurements of 120 crystalline silicon PV modules following long-term outdoor measurements. A set of 90 PV modules represent the first grid-connected photovoltaic (PV) system in Algeria, installed at the level of the “Centre de Développement des Energies Renouvelables” (CDER) site (Mediterranean coast), Bouzareah. The other 30 PV modules were undertaken in an arid area of the desert region of Ghardaïa site, about 600 km south of Algiers, with measurements collected from different applications. Following different characterization tests, we noticed that the all tested PV modules kept their power-generating rate except a slight reduction. Therefore, a mathematical model has been used to carry out PV module testing at different irradiance and temperature levels. Hence, different PV module parameters have been calculated from the recorded values of the open-circuit voltage, the short-circuit current, the voltage and current at maximum power point. The electrical measurements have indicated different degradations of current-voltage parameters. All the PV modules stated a decrease in the nominal power, which is variable from one module to another.

GTA weld penetration and the effects of deviations in machine variables

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giedt, W.H.

1987-07-01

Analytical models for predicting the temperature distribution during GTA welding are reviewed with the purpose of developing a procedure for investigating the effects of deviations in machine parameters. The objective was to determine the accuracy required in machine settings to obtain reproducible results. This review revealed a wide range of published values (21 to 90%) for the arc heating efficiency. Low values (21 to 65%) were associated with evaluation of efficiency using constant property conduction models. Values from 75 to 90% were determined from calorimetric type measurements and are applicable for more accurate numerical solution procedures. Although numerical solutions canmore » yield better overall weld zone predictions, calculations are lengthy and complex. In view of this and the indication that acceptable agreement with experimental measurements can be achieved with the moving-point-source solution, it was utilized to investigate the effects of deviations or errors in voltage, current, and travel speed on GTA weld penetration. Variations resulting from welding within current goals for voltage (+-0.1 V), current (+-3.0 A), and travel speed (+-2.0%) were found to be +-2 to 4%, with voltage and current being more influential than travel speed.« less

Positive Voltage Hazard to EMU Crewman from Currents through Plasma

NASA Astrophysics Data System (ADS)

Kramer, Leonard; Hamilton, Doug; Mikatarian, Ronald; Thomas, Joseph; Koontz, Steven

2010-09-01

The International Space Station(ISS) in its transit through the ionosphere experiences a variable electrical potential between its bonded structure and the overlying ionospheric plasma. The 160 volt solar arrays on ISS are grounded negative and drive structure to negative floating potential(FP) relative to plasma. This potential is a result of the asymmetric collection properties of currents from ions and electrons moderated by geomagnetic; so called v Å~ B induction distributing an additional 20 volts both positive and negative across ISS’s main structural truss element. Since the space suit or extravehicular mobility unit(EMU) does not protect the crewperson from electrical shock, during extra vehicular activity(EVA) the person is exposed to a hazard from the potential when any of the several metallic suit penetrations come in direct contact with ISS structure. The moisture soaked garment worn by the crewperson and the large interior metal contact areas facilitate currents through the crewperson’s body. There are two hazards; Negative and Positive FP. The Negative hazard is the better known risk created by a shock hazard from arcing of anodized material on the EMU. Negative hazard has been controlled by plasma contactor units(PCU) containing a reserve of Xenon gas which is expelled from ISS. The PCU provide a ground path for the negative charge from the structure to flow to exterior plasma bringing ISS FP closer to zero. The understanding has now emerged that the operation of PCUs to protect the crewmen from negative voltage exposes him to low to moderate positive voltage(≤15V). Positive voltage is also a hazard as it focuses electrons onto exposed metal EMU penetrations completing a circuit from plasma through interior contact with the moist crewman’s body and on to ISS ground through any of several secondary isolated metal penetrations. The resulting direct current from positive voltage exposure is now identified as an electrical shock hazard. This paper describes the model of the EMU with a human body in the circuit that has been used by NASA to evaluate the low positive voltage hazard. The model utilizes the electron collection characterization from on orbit Langmuir probe data as representative of electron collection to a positive charged surface with a wide range of on orbit plasma temperature and density conditions. The data has been unified according to nonlinear theoretical temperature and density variation of the electron saturated probe current collection theory and used as a model for the electron collection at EMU surfaces. Vulnerable paths through the EMU connecting through the crewman’s body have been identified along with electrical impedance of the exposed body parts. The body impedance information is merged with the electron collection characteristics in circuit simulation software known as SPICE. The assessment shows that currents can be on the order of 20 mA for a 15 V exposure and of order 4 mA at 3V. These currents formally violate NASA protocol for electric current exposures. However the human factors associated with subjective consequences of noxious stimuli from low voltage exposure during the stressful conditions of EVA are an area of active inquiry.

Effect of grid transparency and finite collector size on determining ion temperature and density by the retarding potential analyzer

NASA Technical Reports Server (NTRS)

Troy, B. E., Jr.; Maier, E. J.

1975-01-01

The effects of the grid transparency and finite collector size on the values of thermal ion density and temperature determined by the standard RPA (retarding potential analyzer) analysis method are investigated. The current-voltage curves calculated for varying RPA parameters and a given ion mass, temperature, and density are analyzed by the standard RPA method. It is found that only small errors in temperature and density are introduced for an RPA with typical dimensions, and that even when the density error is substantial for nontypical dimensions, the temperature error remains minimum.

Research on Novel High-Power Microwave/Millimeter Wave Sources and Applications

DTIC Science & Technology

2010-08-28

density with acceptable operating temperature and lifetime. The MIG is optimized with the EGUN code for a cath- ode voltage Vb of 100 kV and a beam...emission suppression. Figure 2 is an EGUN drawing of the MIG configuration/ dimensions and electron trajectories. The design is flexible TABLE I. Predicted...and measured MIG parameters. EGUN prediction smooth cathode Measurement Voltage kV 100.0 100.0 Current A 8.0 8.0 0 1.40 1.40 vz /vz0 3.5% 4.6

In situ heating to detoxify organic-contaminated soils

DOEpatents

Buelt, James L.; Oma, Kenton H.

1990-01-01

A method and apparatus for decontaminating ground areas where toxic chemicals are buried comprises disposition of a plurality of spaced electrodes in the ground to be treated and application of a voltage across the electrodes for bringing about current flow through the ground. Power delivered to the ground volatilizes the chemicals which are collected and directed to a gas treatment system. The preferred form of the invention employs high voltage arc discharge between the electrodes for heating a ground region to relatively high temperatures at relatively low power levels.

Temperature dependent simulation of diamond depleted Schottky PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.more » The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.« less

Pulsed laser-deposited VO2 thin films on Pt layers

NASA Astrophysics Data System (ADS)

Sakai, Joe; Zaghrioui, Mustapha; Ta Phuoc, Vinh; Roger, Sylvain; Autret-Lambert, Cécile; Okimura, Kunio

2013-03-01

VO2 films were deposited on Pt (111)/TiO2/SiO2/Si (001) substrates by means of a pulsed laser deposition technique. An x-ray diffraction peak at 2θ = 39.9° was deconvoluted into two pseudo-Voigt profiles of Pt (111) and VOx-originated components. The VOx diffraction peak was more obvious in a VOx/Pt (111)/Al2O3 (0001) sample, having a narrower width compared with a VO2/Al2O3 (0001) sample. Temperature-controlled Raman spectroscopy for the VOx/Pt/TiO2/SiO2/Si sample has revealed the monoclinic VO2 phase at low temperature and the structural phase transition at about 72 °C in a heating process. The electronic conductive nature at the high temperature phase was confirmed by near normal incidence infrared reflectivity measurements. Out-of-plane current-voltage characteristics showed an electric field-induced resistance switching at a voltage as low as 0.2 V for a 50 nm-thick film. A survey of present and previous results suggests an experimental law that the transition voltage of VO2 is proportional to the square root of the electrodes distance.

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.; Ponchak, George E.

2003-01-01

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony, concentration was approximately 4 x 10(exp19) per cubic cm. The electron mobility was over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per sq cm, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V(sub DS)) range, with (V(sub DS)) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

A large-area diffuse air discharge plasma excited by nanosecond pulse under a double hexagon needle-array electrode.

PubMed

Liu, Zhi-Jie; Wang, Wen-Chun; Yang, De-Zheng; Wang, Sen; Zhang, Shuai; Tang, Kai; Jiang, Peng-Chao

2014-01-01

A large-area diffuse air discharge plasma excited by bipolar nanosecond pulse is generated under a double hexagon needle-array electrode at atmospheric pressure. The images of the diffuse discharge, electric characteristics, and the optical emission spectra emitted from the diffuse air discharge plasma are obtained. Based on the waveforms of pulse voltage and current, the power consumption, and the power density of the diffuse air discharge plasma are investigated under different pulse peak voltages. The electron density and the electron temperature of the diffuse plasma are estimated to be approximately 1.42×10(11) cm(-3) and 4.4 eV, respectively. The optical emission spectra are arranged to determine the rotational and vibrational temperatures by comparing experimental with simulated spectra. Meanwhile, the rotational and vibrational temperatures of the diffuse discharge plasma are also discussed under different pulse peak voltages and pulse repetition rates, respectively. In addition, the diffuse air discharge plasma can form an area of about 70×50 mm(2) on the surface of dielectric layer and can be scaled up to the required size. Crown Copyright © 2013. Published by Elsevier B.V. All rights reserved.