Temperature Dependence of Attenuation of Coplanar Waveguide on 4H High Resistivity SIC Through 540C

NASA Technical Reports Server (NTRS)

Ponchak, G. E.; Schwartz, Z.; Alterovitz, S. A.; Downey, A. N.; Freeman, J. C.

2003-01-01

For the first time, the temperature and frequency dependence of the attenuation of a Coplanar Waveguide (CPW) on 4H, High Resistivity Sic substrate is reported. The low frequency attenuation increases by 2 dB/cm at 500 C and the high frequency attenuation increases by 3.3 dB/cm at 500 C compared to room temperature.

A fully automated temperature-dependent resistance measurement setup using van der Pauw method

NASA Astrophysics Data System (ADS)

Pandey, Shivendra Kumar; Manivannan, Anbarasu

2018-03-01

The van der Pauw (VDP) method is widely used to identify the resistance of planar homogeneous samples with four contacts placed on its periphery. We have developed a fully automated thin film resistance measurement setup using the VDP method with the capability of precisely measuring a wide range of thin film resistances from few mΩ up to 10 GΩ under controlled temperatures from room-temperature up to 600 °C. The setup utilizes a robust, custom-designed switching network board (SNB) for measuring current-voltage characteristics automatically at four different source-measure configurations based on the VDP method. Moreover, SNB is connected with low noise shielded coaxial cables that reduce the effect of leakage current as well as the capacitance in the circuit thereby enhancing the accuracy of measurement. In order to enable precise and accurate resistance measurement of the sample, wide range of sourcing currents/voltages are pre-determined with the capability of auto-tuning for ˜12 orders of variation in the resistances. Furthermore, the setup has been calibrated with standard samples and also employed to investigate temperature dependent resistance (few Ω-10 GΩ) measurements for various chalcogenide based phase change thin films (Ge2Sb2Te5, Ag5In5Sb60Te30, and In3SbTe2). This setup would be highly helpful for measurement of temperature-dependent resistance of wide range of materials, i.e., metals, semiconductors, and insulators illuminating information about structural change upon temperature as reflected by change in resistances, which are useful for numerous applications.

Reentrant resistive behavior and dimensional crossover in disordered superconducting TiN films

DOE PAGES

Postolova, Svetlana V.; Mironov, Alexey Yu.; Baklanov, Mikhail R.; ...

2017-05-11

A reentrant temperature dependence of the normal state resistance often referred to as the N-shaped temperature dependence, is omnipresent in disordered superconductors – ranging from high-temperature cuprates to ultrathin superconducting films – that experience superconductor-to-insulator transition. Yet, despite the ubiquity of this phenomenon its origin still remains a subject of debate. Here we investigate strongly disordered superconducting TiN films and demonstrate universality of the reentrant behavior. We offer a quantitative description of the N-shaped resistance curve. We show that upon cooling down the resistance first decreases linearly with temperature and then passes through the minimum that marks the 3D-2D crossovermore » in the system. In the 2D temperature range the resistance first grows with decreasing temperature due to quantum contributions and eventually drops to zero as the system falls into a superconducting state. As a result, our findings demonstrate the prime importance of disorder in dimensional crossover effects.« less

Simple theory for the dependence of the electrical resistance of the magnetic superconductors TmRh/sub 4/B/sub 4/ and ErRh/sub 4/B/sub 4/ on temperature and field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meijer, H.C.; Andriessen, J.; Postma, H.

1986-04-01

A phenomenological description for the temperature and magnetic field dependence of the electrical resistance R of polycrystalline samples of the reentrant superconductors TmRh/sub 4/B/sub 4/ and ErRh/sub 4/B/sub 4/ is given on the basis of two assumptions: (1) Due to the anisotropic values of the rare-earth ions the critical field of the crystallites depends on the direction of the externally applied field, which leads to an increasing number of normal crystallites with increasing field. For the dependence of the magnetization M on temperature, a molecular field model is used. (2) The bulk resistance R of the sample depends in amore » linear way on the fraction of normal crystallites. There is a qualitative agreement with the experimental results of Hamaker et al. and of Ott et al. It is also shown that an applied field H/sub e/ is equal to the orbital critical field H(/sub c//sub 2/ for the temperature at which R(H/sub e/, T) starts deviating from the resistance of the normal sample.« less

Systematics of the temperature-dependent interplane resistivity in Ba(Fe 1-xM x)₂As₂ (M=Co, Rh, Ni, and Pd)

DOE PAGES

Tanatar, M. A.; Ni, N.; Thaler, A.; ...

2011-07-27

Temperature-dependent interplane resistivity ρ c(T) was measured systematically as a function of transition-metal substitution in the iron-arsenide superconductors Ba(Fe 1-xM x)₂As₂, M=Ni, Pd, Rh. The data are compared with the behavior found in Ba(Fe 1-xCo x)₂As₂, revealing resistive signatures of pseudogap. In all compounds we find resistivity crossover at a characteristic pseudogap temperature T* from nonmetallic to metallic temperature dependence on cooling. Suppression of T* proceeds very similarly in cases of Ni and Pd doping and much faster than in similar cases of Co and Rh doping. In cases of Co and Rh doping an additional minimum in the temperature-dependentmore » ρ c emerges for high dopings, when superconductivity is completely suppressed. These features are consistent with the existence of a charge gap covering part of the Fermi surface. The part of the Fermi surface affected by this gap is notably larger for Ni- and Pd-doped compositions than in Co- and Rh-doped compounds.« less

Temperature dependence of electroresistance for La0.67Ba0.33MnO3 manganite

NASA Astrophysics Data System (ADS)

Kumar, Rajesh; Gupta, Ajai K.; Kumar, Vijay; Bhalla, G. L.; Khare, Neeraj

2007-12-01

The influence of dc biasing current on temperature dependence of resistance of La0.67Ba0.33MnO3 bulk sample is reported. A decrease in the resistance (electroresistance) on the application of higher bias current is observed. The electroresistance is maximum at metal insulator transition temperature (TMI) and decreases when the temperature is either increased or decreased from TMI. A two-phase model is proposed to explain the occurrence of electroresistance. The higher bias current leads to an increase in alignment of spins and thus, in turn, leads to an increase in spin stiffness coefficient and decrease in the resistance at TMI.

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, C.H.; Evans, J.T. Jr.

1998-11-24

A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, Carleton H.; Evans, Jr., Joseph Tate

1998-01-01

A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

Oxidation-resistant silicide coating applied to columbium alloy screen

NASA Technical Reports Server (NTRS)

Torgerson, R. T.

1971-01-01

Coated screens withstand temperature cycling in special transpiration-cooling systems and provide porous surface that is effective at temperatures well above those limiting superalloy screen efficiency. Thickness of coating depends on time, temperature and activator concentration. Coatings are uniform and resistant to thermal cycling.

Electrical transport properties in Co nanocluster-assembled granular film

NASA Astrophysics Data System (ADS)

Zhang, Qin-Fu; Wang, Lai-Sen; Wang, Xiong-Zhi; Zheng, Hong-Fei; Liu, Xiang; Xie, Jia; Qiu, Yu-Long; Chen, Yuanzhi; Peng, Dong-Liang

2017-03-01

A Co nanocluster-assembled granular film with three-dimensional cross-connection paralleled conductive paths was fabricated by using the plasma-gas-condensation method in a vacuum environment. The temperature-dependent longitudinal resistivity and anomalous Hall effect of this new type granular film were systematically studied. The longitudinal resistivity of the Co nanocluster-assembled granular film first decreased and then increased with increasing measuring temperature, revealing a minimum value at certain temperature, T min . In a low temperature region ( T < T min ), the barrier between adjacent nanoclusters governed the electrical transport process, and the temperature coefficient of resistance (TCR) showed an insulator-type behavior. The thermal fluctuation-induced tunneling conduction progressively increased with increasing temperature, which led to a decrease in the longitudinal resistivity. In a high temperature region, the TCR showed a metallic-type behavior, which was primarily attributed to the temperature-dependent scattering. Different from the longitudinal resistivity behavior, the saturated anomalous Hall resistivity increased monotonically with increasing measuring temperature. The value of the anomalous Hall coefficient ( R S ) reached 2.3 × 10-9 (Ω cm)/G at 300 K, which was about three orders of magnitude larger than previously reported in blocky single-crystal Co [E. N. Kondorskii, Sov. Phys. JETP 38, 977 (1974)]. Interestingly, the scaling relation ( ρx y A ∝ ρx x γ ) between saturated anomalous Hall resistivity ( ρx y A ) and longitudinal resistivity ( ρ x x ) was divided into two regions by T min . However, after excluding the contribution of tunneling, the scaling relation followed the same rule. The corresponding physical mechanism was also proposed to explain these phenomena.

Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires self-heated to melting temperature

NASA Astrophysics Data System (ADS)

Bakan, Gokhan; Adnane, Lhacene; Gokirmak, Ali; Silva, Helena

2012-09-01

Temperature-dependent electrical resistivity, ρ(T), and thermal conductivity, k(T), of nanocrystalline silicon microwires self-heated to melt are extracted by matching simulated current-voltage (I-V) characteristics to experimental I-V characteristics. Electrical resistivity is extracted from highly doped p-type wires on silicon dioxide in which the heat losses are predominantly to the substrate and the self-heating depends mainly on ρ(T) of the wires. The extracted ρ(T) decreases from 11.8 mΩ cm at room-temperature to 5.2 mΩ cm at 1690 K, in reasonable agreement with the values measured up to ˜650 K. Electrical resistivity and thermal conductivity are extracted from suspended highly doped n-type silicon wires in which the heat losses are predominantly through the wires. In this case, measured ρ(T) (decreasing from 20.5 mΩ cm at room temperature to 12 mΩ cm at 620 K) is used to extract ρ(T) at higher temperatures (decreasing to 1 mΩ cm at 1690 K) and k(T) (decreasing from 30 W m-1 K-1 at room temperature to 20 W m-1 K-1 at 1690 K). The method is tested by using the extracted parameters to model wires with different dimensions. The experimental and simulated I-V curves for these wires show good agreement up to high voltage and temperature levels. This technique allows extraction of the electrical resistivity and thermal conductivity up to very high temperatures from self-heated microstructures.

The residual and temperature-dependent resistance of reference-grade platinum wire below 13.8 K

NASA Astrophysics Data System (ADS)

Tew, W. L.; Murdock, W. E.; Chojnacky, M. J.; Ripple, D. C.

2013-09-01

We report the Residual Resistance Ratio (RRR) and resistance ratio W(GaMP) (gallium melting point) values for well-annealed samples of the original NIST platinum thermoelectric standard (SRM 1967), for its contemporary substitute SRM 1967a, and for a collection of NIST capsule-type SPRTs. The RRR dependence on annealing temperature is investigated and our results are compared with calculations based on contemporary chemical impurity analyses. The data are corrected to remove temperature-dependent components to derive the RRR at 0 K using W(T) data over the range 1 K

High-throughput resistivity apparatus for thin-film combinatorial libraries

NASA Astrophysics Data System (ADS)

Hewitt, K. C.; Casey, P. A.; Sanderson, R. J.; White, M. A.; Sun, R.

2005-09-01

An apparatus, capable of measuring the dc resistance versus temperature of a 49-member library prepared by thin-film deposition techniques was designed and tested. The library is deposited by dc magnetron sputtering onto 10.16cm×10.16cm alumina substrates on which are placed aluminum masks consisting of 8mm diam holes cut on a 7×7 grid, the center-to-center spacing being 10.15mm. Electrical contact to the library is made in a standard van der Pauw geometry using 196 spring-loaded, gold-coated pins, four pins for each member of the library. The temperature is controlled using a helium refrigerator in combination with a liquid-nitrogen radiation shield that greatly reduces radiative heating of the sample stage. With the radiation shield, the cold finger is able to sustain a minimum temperature of 7K and the sample stage a minimum temperature of 27K. The temperature (27-291K) dependent dc resistivity of a thin-film silver library of varying thickness (48-639nm) is presented to highlight the capabilities of the apparatus. The thickness dependence of both the resistivity and the temperature coefficient of resistivity are quantitatively consistent with the literature. For thicknesses greater than about 100nm, the room-temperature resistivity (3.4μΩcm) are consistent with Matthiessen's rule for 1%-2% impurity content, and the temperature coefficient of resistivity is consistent with the bulk value. For thicknesses less than 100nm, an increase in resistivity by a factor of 8 is found, which may be due to surface and boundary scattering effects; a corresponding increase in the temperature coefficient of resistivity is consistent with a concomitant decrease in the magnitude of the elastic constants and surface scattering effects.

The Processing of High Temperature Ceramic Superconducting Devices. Volume 1.

DTIC Science & Technology

1992-01-31

assuming frequency squared dependence) for ease of comparison with other measurements. At the low power levels the surface resistance is I 200 micro ...transition temperature is 106K, where the measured resistivity becomes zero. The noimal state resistivity at the transition temperature, 100 micro -ohms...our films at temperatures down t o 4K. A four-point measurement is used, and the criterion of 1 micro -volt per millimeter is usedI to determine

A Comparison of Methods for Computing the Residual Resistivity Ratio of High-Purity Niobium

PubMed Central

Splett, J. D.; Vecchia, D. F.; Goodrich, L. F.

2011-01-01

We compare methods for estimating the residual resistivity ratio (RRR) of high-purity niobium and investigate the effects of using different functional models. RRR is typically defined as the ratio of the electrical resistances measured at 273 K (the ice point) and 4.2 K (the boiling point of helium at standard atmospheric pressure). However, pure niobium is superconducting below about 9.3 K, so the low-temperature resistance is defined as the normal-state (i.e., non-superconducting state) resistance extrapolated to 4.2 K and zero magnetic field. Thus, the estimated value of RRR depends significantly on the model used for extrapolation. We examine three models for extrapolation based on temperature versus resistance, two models for extrapolation based on magnetic field versus resistance, and a new model based on the Kohler relationship that can be applied to combined temperature and field data. We also investigate the possibility of re-defining RRR so that the quantity is not dependent on extrapolation. PMID:26989580

Transport Properties and Magnetoresistance of La0.8Ca0.13Ag0.07MnO3 Perovskite Manganite Synthesized by Sol-Gel Method

NASA Astrophysics Data System (ADS)

Kurniawan, B.; Ruli, F.; Imaduddin, A.; Kamila, R.

2018-05-01

In this paper, we investigate the transport properties and magnetoresistance effect of La0.8Ca0.13Ag0.07MnO3 perovskite manganite synthesized by sol-gel method. The XRD pattern of the sample shows a rhombohedral perovskite structure with space group R3¯c. The EDX analysis confirms that the sample contains all expected chemical elements without any additional impurity. The temperature dependence of electrical resistivity was measured using a cryogenic magnetometer. The results show a metal-insulator transition temperature (TM-I ) at 280 K. The resistivity of the sample increases with an increase of temperature below TM-I . Theoretical analyses of the temperature dependence of resistivity suggest that the resistivity due to electron-electron scattering is predominant below TI-M. The resistivity of the sample decreases when applied magnetic field 1 T at a temperature range of 10 K to 300 K. The magnetoresistance of La0.8Ca0.13Ag0.07MnO3 emanates from spin-polarized tunneling process at the grain boundary.

Dual-mode self-validating resistance/Johnson noise thermometer system

DOEpatents

Shepard, Robert L.; Blalock, Theron V.; Roberts, Michael J.

1993-01-01

A dual-mode Johnson noise and DC resistance thermometer capable of use in control systems where prompt indications of temperature changes and long term accuracy are needed. A resistance-inductance-capacitance (RLC) tuned circuit produces a continuous voltage signal for Johnson noise temperature measurement. The RLC circuit provides a mean-squared noise voltage that depends only on the capacitance used and the temperature of the sensor. The sensor has four leads for simultaneous coupling to a noise signal processor and to a DC resistance signal processor.

Evolution of structural, electronic and magneto-transport properties of Sr2Ir1-xTixO4 5d based oxide

NASA Astrophysics Data System (ADS)

Bhatti, Imtiaz Noor; Pramanik, A. K.

2018-05-01

To investigate the effect of chemical doping on structural and transport properties in Sr2IrO4, in this study we have doped Ti4+ (3d0) at Ir4+ (5d5) site. Thus Ti doping introduces hole in the electronic band moreover, it also weaken the spin orbital coupling (SOC) and enhance electronic correlation (U). We have prepared the polycrystalline samples of Sr2Ir1-xTixO4 with x = 0.0 0.05 and 0.10 with solid state reaction method. Single phase and chemically pure samples were obtained. All samples crystalizes in tetragonal structure and I41/acd symmetry. The structural analysis shows the evolution of lattice parameter with doping. The temperature dependent resistivity is measured using four probe technique down in the temperature range 5 K-300 K. The resistivity increases with Ti doping. Temperature dependency of resistivity is explained by thermal activated 2-dimensional Mott Variable Hopping range model. To further understand the transport behavior both temperature and field dependent magneto-resistance is also studied. Negative magneto-resistance (MR) has been observed for all samples at 50 K. The MR shows quadratic field dependence at high field, implies a relevance of a quantum interference effect in this spin orbital coupled insulator.

Effect of growth temperature, surface type and incubation time on the resistance of Staphylococcus aureus biofilms to disinfectants.

PubMed

Abdallah, Marwan; Chataigne, Gabrielle; Ferreira-Theret, Pauline; Benoliel, Corinne; Drider, Djamel; Dhulster, Pascal; Chihib, Nour-Eddine

2014-03-01

The goal of this study was to investigate the effect of the environmental conditions such as the temperature change, incubation time and surface type on the resistance of Staphylococcus aureus biofilms to disinfectants. The antibiofilm assays were performed against biofilms grown at 20 °C, 30 °C and 37 °C, on the stainless steel and polycarbonate, during 24 and 48 h. The involvement of the biofilm matrix and the bacterial membrane fluidity in the resistance of sessile cells were investigated. Our results show that the efficiency of disinfectants was dependent on the growth temperature, the surface type and the disinfectant product. The increase of growth temperature from 20 °C to 37 °C, with an incubation time of 24 h, increased the resistance of biofilms to cationic antimicrobials. This change of growth temperature did not affect the major content of the biofilm matrix, but it decreased the membrane fluidity of sessile cells through the increase of the anteiso-C19 relative amount. The increase of the biofilm resistance to disinfectants, with the rise of the incubation time, was dependent on both growth temperature and disinfectant product. The increase of the biofilm age also promoted increases in the matrix production and the membrane fluidity of sessile cells. The resistance of S. aureus biofilm seems to depend on the environment of the biofilm formation and involves both extracellular matrix and membrane fluidity of sessile cells. Our study represents the first report describing the impact of environmental conditions on the matrix production, sessile cells membrane fluidity and resistance of S. aureus biofilms to disinfectants.

Annealing effect on the structural and dielectric properties of hematite nanoparticles

NASA Astrophysics Data System (ADS)

Kumar, Vijay; Chahal, Surjeet; Singh, Dharamvir; Kumar, Ashok; Kumar, Parmod; Asokan, K.

2018-05-01

In the present work, we have synthesized hematite (α-Fe2O3) nanoparticles by sol-gel method and sintered them at different temperatures (200 °C, 400 °C and 800 °C for six hours). The samples were then characterized using versatile characterization techniques such as X-ray diffraction (XRD), dielectric measurement and temperature dependent resistivity (RT) for their structural, dielectric and electrical properties. XRD measurements infer that intensity of peak increases with an increase in temperature resulting an increase in crystallite size. Temperature dependent resistivity also shows decrease in the resistivity of the samples. Furthermore, the dielectric measurements correspond to the increase in the dielectric constant. Based on these observations, it can be inferred that sintering temperature plays an important role in tailoring the various physical properties of hematite nanoparticles.

Moderate temperature-dependent surface and volume resistivity and low-frequency dielectric constant measurements of pure and multi-walled carbon nanotube (MWCNT) doped polyvinyl alcohol thin films

NASA Astrophysics Data System (ADS)

Edwards, Matthew; Guggilla, Padmaja; Reedy, Angela; Ijaz, Quratulann; Janen, Afef; Uba, Samuel; Curley, Michael

2017-08-01

Previously, we have reported measurements of temperature-dependent surface resistivity of pure and multi-walled carbon nanotube (MWNCT) doped amorphous Polyvinyl Alcohol (PVA) thin films. In the temperature range from 22 °C to 40 °C with humidity-controlled environment, we found the surface resistivity to decrease initially, but to rise steadily as the temperature continued to increase. Moreover, electric surface current density (Js) was measured on the surface of pure and MWCNT doped PVA thin films. In this regard, the surface current density and electric field relationship follow Ohm's law at low electric fields. Unlike Ohmic conduction in metals where free electrons exist, selected captive electrons are freed or provided from impurities and dopants to become conduction electrons from increased thermal vibration of constituent atoms in amorphous thin films. Additionally, a mechanism exists that seemingly decreases the surface resistivity at higher temperatures, suggesting a blocking effect for conducting electrons. Volume resistivity measurements also follow Ohm's law at low voltages (low electric fields), and they continue to decrease as temperatures increase in this temperature range, differing from surface resistivity behavior. Moreover, we report measurements of dielectric constant and dielectric loss as a function of temperature and frequency. Both the dielectric constant and dielectric loss were observed to be highest for MWCNT doped PVA compared to pure PVA and commercial paper, and with frequency and temperature for all samples.

Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.

1987-01-01

Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

A temperature correlation for the radiation resistance of a thick-walled circular duct exhausting a hot gas

NASA Technical Reports Server (NTRS)

Mahan, J. R.; Cline, J. G.; Jones, J. D.

1984-01-01

It is often useful to know the radiation impedance of an unflanged but thick-walled circular duct exhausting a hot gas into relatively cold surroundings. The reactive component is shown to be insensitive to temperature, but the resistive component is shown to be temperature dependent. A temperature correlation is developed permitting prediction of the radiation resistance from a knowledge of the temperature difference between the ambient air and the gas flowing from the duct, and a physical basis for this correlation is presented.

Temperature dependent electrical properties of polyaniline film grown on paper through aniline vapor polymerization

NASA Astrophysics Data System (ADS)

Deb, K.; Bhowmik, K. L.; Bera, A.; Chattopadhyay, K. K.; Saha, B.

2016-05-01

Polyaniline thin film has been prepared on paper by aniline vapor deposition technique. Ferric chloride has been used as polymerizing agent in this approach. The prepared films were studied through electrical resistivity and optical properties measurements. The electrical resistivity of the polyaniline film shows significant temperature dependence. The resistance sharply falls with the increase in temperature. The optical absorbance measurements shows characteristics absorbance peak indicating the formation of conducting emeraldine salt form of polyaniline. The optical energy band gap of the film was calculated from the transmittance spectra. The optical energy band gap and electrical conductivity of the polyaniline film is well suited for their applications in electronic devices.

Low temperature resistivity studies of SmB6: Observation of two-dimensional variable-range hopping conductivity

NASA Astrophysics Data System (ADS)

Batkova, Marianna; Batko, Ivan; Gabáni, Slavomír; Gažo, Emil; Konovalova, Elena; Filippov, Vladimir

2018-05-01

We studied electrical resistance of a single-crystalline SmB6 sample with a focus on the region of the "low-temperature resistivity plateau". Our observations did not show any true saturation of the electrical resistance at temperatures below 3 K down to 70 mK. According to our findings, temperature dependence of the electrical conduction in a certain temperature interval above 70 mK can be decomposed into a temperature-independent term and a temperature-activated term that can be described by variable-range hopping formula for two-dimensional systems, exp [ -(T0 / T) 1 / 3 ]. Thus, our results indicate importance of hopping type of electrical transport in the near-surface region of SmB6.

Thermal-Interaction Matrix For Resistive Test Structure

NASA Technical Reports Server (NTRS)

Buehler, Martin G.; Dhiman, Jaipal K.; Zamani, Nasser

1990-01-01

Linear mathematical model predicts increase in temperature in each segment of 15-segment resistive structure used to test electromigration. Assumption of linearity based on fact: equations that govern flow of heat are linear and coefficients in equations (heat conductivities and capacities) depend only weakly on temperature and considered constant over limited range of temperature.

Resistive switching properties and physical mechanism of cobalt ferrite thin films

NASA Astrophysics Data System (ADS)

Hu, Wei; Zou, Lilan; Chen, Ruqi; Xie, Wei; Chen, Xinman; Qin, Ni; Li, Shuwei; Yang, Guowei; Bao, Dinghua

2014-04-01

We report reproducible resistive switching performance and relevant physical mechanism of sandwiched Pt/CoFe2O4/Pt structures in which the CoFe2O4 thin films were fabricated by a chemical solution deposition method. Uniform switching voltages, good endurance, and long retention have been demonstrated in the Pt/CoFe2O4/Pt memory cells. On the basis of the analysis of current-voltage characteristic and its temperature dependence, we suggest that the carriers transport through the conducting filaments in low resistance state with Ohmic conduction behavior, and the Schottky emission and Poole-Frenkel emission dominate the conduction mechanism in high resistance state. From resistance-temperature dependence of resistance states, we believe that the physical origin of the resistive switching refers to the formation and rupture of the oxygen vacancies related filaments. The nanostructured CoFe2O4 thin films can find applications in resistive random access memory.

Magnetization reversal and inverted magnetoresistance of exchange-biased spin valves with a gadolinium layer

NASA Astrophysics Data System (ADS)

Milyaev, M.; Naumova, L.; Chernyshova, T.; Proglyado, V.; Kamensky, I.; Krinitsina, T.; Ryabukhina, M.; Ustinov, V.

2017-03-01

FeMn-based spin valves with a gadolinium layer have been fabricated by magnetron sputtering. The magnetoresistive properties of the spin valves have been investigated at temperatures of 80-293 K. Temperature-induced switching between low- and high-resistance magnetic states has been revealed. Realization of the low- or high-resistance states depends on which magnetic moment dominates in the exchange-coupled Gd/CoFe, of Gd or CoFe. It has been shown that the switching temperature depends on the thickness of the gadolinium layer.

Efros-Shklovskii variable range hopping and nonlinear transport in 1 T /1 T'-MoS2

NASA Astrophysics Data System (ADS)

Papadopoulos, N.; Steele, G. A.; van der Zant, H. S. J.

2017-12-01

We have studied temperature- and electric-field-dependent carrier transport in single flakes of MoS2 treated with n -butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, a comparison between two- and four-probe measurements yields a contact resistance that increases significantly with decreasing temperature.

Effect of temperature on series resistance of organic/inorganic semiconductor junction diode

NASA Astrophysics Data System (ADS)

Tripathi, Udbhav; Kaur, Ramneek; Bharti, Shivani

2016-05-01

The paper reports the fabrication and characterization of CuPc/n-Si organic/inorganic semiconductor diode. Copper phthalocyanine, a p-type organic semiconductor layer has been deposited on Si substrate by thermal evaporation technique. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Temperature dependence of the schottky diode parameters has been studied and discussed in the temperature range, 303 K to 353 K. Series resistance of the diode has been determined using Cheung's function method. Series resistance decreases with increase in temperature. The large value of series resistance at low temperature has been explained on the basis of barrier inhomogeneities in the diode.

The Effect of Venue and Wind on the Distance of a Hammer Throw

ERIC Educational Resources Information Center

Hunter, Iain

2005-01-01

In track and field, gravity and air resistance act on the hammer after it has been released. Both of these forces depend on altitude and latitude. In addition, air resistance also depends on wind, temperature, humidity, and barometric pressure. Often, air resistance and varying gravity throughout the earth are not considered when throwing…

Evidence for the bias-driven migration of oxygen vacancies in amorphous non-stoichiometric gallium oxide

NASA Astrophysics Data System (ADS)

Guo, D. Y.; Qian, Y. P.; Su, Y. L.; Shi, H. Z.; Li, P. G.; Wu, J. T.; Wang, S. L.; Cui, C.; Tang, W. H.

2017-06-01

The conductivity of gallium oxide thin films is strongly dependent on the growth temperature when they deposited by pulsed laser deposition under vacuum environment, exhibiting an insulative-to-metallic transition with the decrease of the temperature. The high conductive gallium oxide films deposited at low temperature are amorphous, non-stoichiometric, and rich in oxygen vacancy. Large changes in electrical resistance are observed in these non-stoichiometric thin films. The wide variety of hysteretic shapes in the I-V curves depend on the voltage-sweep rate, evidencing that the time-dependent redistribution of oxygen vacancy driven by bias is the controlling parameter for the resistance of gallium oxide.

Temperature dependent electrical properties of polyaniline film grown on paper through aniline vapor polymerization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deb, K.; Bera, A.; Saha, B., E-mail: biswajit.physics@gmail.com

2016-05-23

Polyaniline thin film has been prepared on paper by aniline vapor deposition technique. Ferric chloride has been used as polymerizing agent in this approach. The prepared films were studied through electrical resistivity and optical properties measurements. The electrical resistivity of the polyaniline film shows significant temperature dependence. The resistance sharply falls with the increase in temperature. The optical absorbance measurements shows characteristics absorbance peak indicating the formation of conducting emeraldine salt form of polyaniline. The optical energy band gap of the film was calculated from the transmittance spectra. The optical energy band gap and electrical conductivity of the polyaniline filmmore » is well suited for their applications in electronic devices.« less

Climate change increases the risk of herbicide-resistant weeds due to enhanced detoxification.

PubMed

Matzrafi, Maor; Seiwert, Bettina; Reemtsma, Thorsten; Rubin, Baruch; Peleg, Zvi

2016-12-01

Global warming will increase the incidence of metabolism-based reduced herbicide efficacy on weeds and, therefore, the risk for evolution of non-target site herbicide resistance. Climate changes affect food security both directly and indirectly. Weeds are the major biotic factor limiting crop production worldwide, and herbicides are the most cost-effective way for weed management. Processes associated with climatic changes, such as elevated temperatures, can strongly affect weed control efficiency. Responses of several grass weed populations to herbicides that inhibit acetyl-CoA carboxylase (ACCase) were examined under different temperature regimes. We characterized the mechanism of temperature-dependent sensitivity and the kinetics of pinoxaden detoxification. The products of pinoxaden detoxification were quantified. Decreased sensitivity to ACCase inhibitors was observed under elevated temperatures. Pre-treatment with the cytochrome-P450 inhibitor malathion supports a non-target site metabolism-based mechanism of herbicide resistance. The first 48 h after herbicide application were crucial for pinoxaden detoxification. The levels of the inactive glucose-conjugated pinoxaden product (M5) were found significantly higher under high- than low-temperature regime. Under high temperature, a rapid elevation in the level of the intermediate metabolite (M4) was found only in pinoxaden-resistant plants. Our results highlight the quantitative nature of non-target-site resistance. To the best of our knowledge, this is the first experimental evidence for temperature-dependent herbicide sensitivity based on metabolic detoxification. These findings suggest an increased risk for the evolution of herbicide-resistant weeds under predicted climatic conditions.

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

PubMed

Wang, Guangyu; Li, Chen; Chen, Yan; Xia, Yidong; Wu, Di; Xu, Qingyu

2016-11-14

Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO x layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoO x interface by the accumulation and depletion of oxygen vacancies.

Low Temperature Conductance of Thin Metal Wires and Films.

NASA Astrophysics Data System (ADS)

Masden, Joseph Thomas

The topic of this thesis is the study of electrical conduction in one and two dimensional systems; specifically the effects predicted by localization and electron-electron interaction theory. We have measured the resistance of wires with very small cross-sectional areas at low temperatures. We find at low temperatures that the resistance varies as T('- 1/2) and that the magnitude of the resistance rise is inversely proportional to the area, as found previously by others. From an analysis of the temperature dependence of the resistance, we find a characteristic length of 0.18 (mu)m at 1K for Pt and AuPd wires, which is the same length found by others. We have also measured the resistance of thin Pt and AuPd films and find that the resistance increases as the temperature decreases. This increase varies as the logarithm of the temperature, and the magnitude of the increase is proportional to the sheet resistance for films with sheet resistances less than about 2 K(OMEGA). A method for fabricating short wires and films was developed to determine the characteristic length by measuring the length dependence of the resistance rise. According to the theories, the behavior of the wires and films should change when the length of the wire or film is comparable to the characteristic length. For the short wires, we found this to be so, and our results are in semi-quantitative agreement with the theory. In short films, we also see an effect as the length of the film is decreased, but the results appear to be inconsistent with the theory, at least in its present form.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bichevoi, V.G.; Kosolapova, M.M.; Kuchma, A.Ya.

The authors investigate the influence of thermal annealing in a constant electric field and also of the addition of TiO/sub 2/ to the initial material on the electrophysical properties (volt-Ampere characteristics and temperature dependence of resistance) of VK 94-1 ceramic. The kinetic characteristics of ceramic VK 94-1 are shown, as are the volt-ampere characteristics of unannealed ceramic VK 94-1. The temperature dependences of volumetric specific resistance of ceramic 94-1 both with and without TiO/sub 2/ are given.

Evaluation of Temperature-Dependent Effective Material Properties and Performance of a Thermoelectric Module

NASA Astrophysics Data System (ADS)

Chien, Heng-Chieh; Chu, En-Ting; Hsieh, Huey-Lin; Huang, Jing-Yi; Wu, Sheng-Tsai; Dai, Ming-Ji; Liu, Chun-Kai; Yao, Da-Jeng

2013-07-01

We devised a novel method to evaluate the temperature-dependent effective properties of a thermoelectric module (TEM): Seebeck coefficient ( S m), internal electrical resistance ( R m), and thermal conductance ( K m). After calculation, the effective properties of the module are converted to the average material properties of a p- n thermoelectric pillar pair inside the module: Seebeck coefficient ( S TE), electrical resistivity ( ρ TE), and thermal conductivity ( k TE). For a commercial thermoelectric module (Altec 1091) chosen to verify the novel method, the measured S TE has a maximum value at bath temperature of 110°C; ρ TE shows a positive linear trend dependent on the bath temperature, and k TE increases slightly with increasing bath temperature. The results show the method to have satisfactory measurement performance in terms of practicability and reliability; the data for tests near 23°C agree with published values.

Anomalous pressure dependence of magnetic ordering temperature in Tb revealed by resistivity measurements to 141 GPa. Comparison with Gd and Dy

DOE PAGES

Lim, J.; Fabbris, G.; Haskel, D.; ...

2015-05-26

In previous studies the pressure dependence of the magnetic ordering temperature T o of Dy was found to exhibit a sharp increase above its volume collapse pressure of 73 GPa, appearing to reach temperatures well above ambient at 157 GPa. In a search for a second such lanthanide, electrical resistivity measurements were carried out on neighboring Tb to 141 GPa over the temperature range 3.8 - 295 K. Below Tb’s volume collapse pressure of 53 GPa, the pressure dependence T o(P) mirrors that of both Dy and Gd. However, at higher pressures T o(P) for Tb becomes highly anomalous. Thismore » result, together with the very strong suppression of superconductivity by dilute Tb ions in Y, suggests that extreme pressure transports Tb into an unconventional magnetic state with an anomalously high magnetic ordering temperature.« less

Ischemia/reperfusion injury resistance in hibernators is more than an effect of reduced body temperature or winter season.

PubMed

Bogren, Lori K; Drew, Kelly L

2014-01-01

Hibernating mammals are resistant to injury following cardiac arrest. The basis of this protection has been proposed to be due to their ability to lower body temperature or metabolic rate in a seasonally-dependent manner. However, recent studies have shown that neither reduced body temperature nor hibernation season are components this protection.

An analysis of the temperature dependence of the gate current in complementary heterojunction field-effect transistors

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Fossum, Eric R.; Baier, Steven M.

1992-01-01

The temperature dependence of the gate current versus the gate voltage in complementary heterojunction field-effect transistors (CHFET's) is examined. An analysis indicates that the gate conduction is due to a combination of thermionic emission, thermionic-field emission, and conduction through a temperature-activated resistance. The thermionic-field emission is consistent with tunneling through the AlGaAs insulator. The activation energy of the resistance is consistent with the ionization energy associated with the DX center in the AlGaAs. Methods reducing the gate current are discussed.

The Arabidopsis SUMO E3 ligase SIZ1 mediates the temperature dependent trade-off between plant immunity and growth

PubMed Central

Vlachakis, Georgios; Chatterjee, Sayantani; Arroyo-Mateos, Manuel; Wackers, Paul F. K.; Jonker, Martijs J.

2018-01-01

Increased ambient temperature is inhibitory to plant immunity including auto-immunity. SNC1-dependent auto-immunity is, for example, fully suppressed at 28°C. We found that the Arabidopsis sumoylation mutant siz1 displays SNC1-dependent auto-immunity at 22°C but also at 28°C, which was EDS1 dependent at both temperatures. This siz1 auto-immune phenotype provided enhanced resistance to Pseudomonas at both temperatures. Moreover, the rosette size of siz1 recovered only weakly at 28°C, while this temperature fully rescues the growth defects of other SNC1-dependent auto-immune mutants. This thermo-insensitivity of siz1 correlated with a compromised thermosensory growth response, which was independent of the immune regulators PAD4 or SNC1. Our data reveal that this high temperature induced growth response strongly depends on COP1, while SIZ1 controls the amplitude of this growth response. This latter notion is supported by transcriptomics data, i.e. SIZ1 controls the amplitude and timing of high temperature transcriptional changes including a subset of the PIF4/BZR1 gene targets. Combined our data signify that SIZ1 suppresses an SNC1-dependent resistance response at both normal and high temperatures. At the same time, SIZ1 amplifies the dark and high temperature growth response, likely via COP1 and upstream of gene regulation by PIF4 and BRZ1. PMID:29357355

Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

NASA Astrophysics Data System (ADS)

Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

2007-03-01

We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

The effects of temperature on the surface resistivity of polyvinyl alcohol (PVA) thin films doped with silver nanoparticles and multi-walled carbon-nanotubes for optoelectronic and sensor applications

NASA Astrophysics Data System (ADS)

Polius, Jemilia R.

This thesis reports measurements of the temperature-dependent surface resistivity of multi-wall carbon nanotube doped polyvinyl alcohol (PVA) thin films. In the temperature range from 22°C to 40°C in a humidity controlled environment, it was found that the surface resistivity decreased initially but raised as the temperature continued to increase. I report surface resistivity measurements as a function of temperature of both multiwall and single-wall carbon nanotube doped PVA thin films, with comparison of the similarities and differences between the two types of film types. This research was conducted using the combined instrumentation of the KEITHLEY Model 6517 Electrometer and the KEITHLEY Model 8009 resistivity test fixture using both commercial and in-house produced organic thin films.

Dependence of the microwave surface resistance of superconducting niobium on the magnitude of the rf field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Romanenko, A.; Grassellino, A.

Utilizing difference in temperature dependencies we decoupled Bardeen-Cooper-Schrieffer (BCS) and residual components of the microwave surface resistance of superconducting niobium at all rf fields up to B{sub rf}{approx}115 mT. We reveal that the residual resistance decreases with field at B{sub rf} Less-Than-Or-Equivalent-To 40 mT and strongly increases in chemically treated niobium at B{sub rf}>80 mT. We find that BCS surface resistance is weakly dependent on field in the clean limit, whereas a strong and peculiar field dependence emerges after 120 Degree-Sign C vacuum baking.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sang-Eui; Moon, Kyoung-Seok; Sohn, Yoonchul, E-mail: yoonchul.son@samsung.com

Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Agmore » interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.« less

Implementation of a method for calculating temperature-dependent resistivities in the KKR formalism

NASA Astrophysics Data System (ADS)

Mahr, Carsten E.; Czerner, Michael; Heiliger, Christian

2017-10-01

We present a method to calculate the electron-phonon induced resistivity of metals in scattering-time approximation based on the nonequilibrium Green's function formalism. The general theory as well as its implementation in a density-functional theory based Korringa-Kohn-Rostoker code are described and subsequently verified by studying copper as a test system. We model the thermal expansion by fitting a Debye-Grüneisen curve to experimental data. Both the electronic and vibrational structures are discussed for different temperatures, and employing a Wannier interpolation of these quantities we evaluate the scattering time by integrating the electron linewidth on a triangulation of the Fermi surface. Based thereupon, the temperature-dependent resistivity is calculated and found to be in good agreement with experiment. We show that the effect of thermal expansion has to be considered in the whole calculation regime. Further, for low temperatures, an accurate sampling of the Fermi surface becomes important.

Numerical simulation of high-temperature thermal contact resistance and its reduction mechanism.

PubMed

Liu, Donghuan; Zhang, Jing

2018-01-01

High-temperature thermal contact resistance (TCR) plays an important role in heat-pipe-cooled thermal protection structures due to the existence of contact interface between the embedded heat pipe and the heat resistive structure, and the reduction mechanism of thermal contact resistance is of special interests in the design of such structures. The present paper proposed a finite element model of the high-temperature thermal contact resistance based on the multi-point contact model with the consideration of temperature-dependent material properties, heat radiation through the cavities at the interface and the effect of thermal interface material (TIM), and the geometry parameters of the finite element model are determined by simple surface roughness test and experimental data fitting. The experimental results of high-temperature thermal contact resistance between superalloy GH600 and C/C composite material are employed to validate the present finite element model. The effect of the crucial parameters on the thermal contact resistance with and without TIM are also investigated with the proposed finite element model.

Numerical simulation of high-temperature thermal contact resistance and its reduction mechanism

PubMed Central

Zhang, Jing

2018-01-01

High-temperature thermal contact resistance (TCR) plays an important role in heat-pipe-cooled thermal protection structures due to the existence of contact interface between the embedded heat pipe and the heat resistive structure, and the reduction mechanism of thermal contact resistance is of special interests in the design of such structures. The present paper proposed a finite element model of the high-temperature thermal contact resistance based on the multi-point contact model with the consideration of temperature-dependent material properties, heat radiation through the cavities at the interface and the effect of thermal interface material (TIM), and the geometry parameters of the finite element model are determined by simple surface roughness test and experimental data fitting. The experimental results of high-temperature thermal contact resistance between superalloy GH600 and C/C composite material are employed to validate the present finite element model. The effect of the crucial parameters on the thermal contact resistance with and without TIM are also investigated with the proposed finite element model. PMID:29547651

Evaluation of the mass transfer process on thin layer drying of papaya seeds from the perspective of diffusive models

NASA Astrophysics Data System (ADS)

Dotto, Guilherme Luiz; Meili, Lucas; Tanabe, Eduardo Hiromitsu; Chielle, Daniel Padoin; Moreira, Marcos Flávio Pinto

2018-02-01

The mass transfer process that occurs in the thin layer drying of papaya seeds was studied under different conditions. The external mass transfer resistance and the dependence of effective diffusivity ( D EFF ) in relation to the moisture ratio ( \\overline{MR} ) and temperature ( T) were investigated from the perspective of diffusive models. It was verified that the effective diffusivity was affected by the moisture content and temperature. A new correlation was proposed for drying of papaya seeds in order to describe these influences. Regarding the use of diffusive models, the results showed that, at conditions of low drying rates ( T ≤ 70 °C), the external mass transfer resistance, as well as the dependence of the effective diffusivity with respect to the temperature and moisture content should be considered. At high drying rates ( T > 90 °C), the dependence of the effective diffusivity with respect to the temperature and moisture content can be neglected, but the external mass transfer resistance was still considerable in the range of air velocities used in this work.

Influence of disorder on the superconducting critical temperature in indium-opal nanocomposites

NASA Astrophysics Data System (ADS)

Zakharchuk, I.; Januzaj, A.; Mikhailin, N. Yu.; Traito, K. B.; Chernyaev, A. V.; Romanov, S. G.; Safonchik, M.; Shamshur, D. V.; Lähderanta, E.

2018-06-01

Transport properties of bulk indium-opal and indium-porous glass superconducting nanocomposites possessing moderate and strong disorder are investigated. A strongly nonmonotonous dependence of the global critical temperature Tc versus normal state conductivity of samples is found. The maximum, which is observed at moderate disorder, has Tc higher than that of clean bulk indium. The increasing part can be explained by the Eliashberg equations with disorder and an additional mechanism of interaction between superconducting and dielectric granules. The descending part of the maximum at higher disorder can be explained by the increasing of long-range Coulomb repulsion due to diffusion of charges. Negative slope in magnetic field dependence of resistivity and a peak in the temperature dependence of resistivity, observed in the sample near the proximity to the disorder-induced superconductor-insulator transition (SIT). A large difference between the onset temperature of superconducting fluctuations, Tcon , and global critical temperature Tc is found and considered in the framework of the weak multifractal theory. Slow time-logarithmic relaxation of the resistivity between Tc and Tcon is observed, which assumes existence of the precursor state near the SIT. This unusual state is discussed in the scope of the many-body localization theory.

High-K (Ba0.8Bi0.2)(Zn0.1Ti0.9)O3 ceramics for high-temperature capacitor applications.

PubMed

Raengthon, Natthaphon; Cann, David P

2011-09-01

Solid solutions of BaTiO(3)-Bi(Zn(1/2)Ti(1/2))O(3) were investigated for high-temperature capacitor applications. Compositions close to 0.8BaTiO(3)-0.2Bi(Zn(1/2)Ti(1/2))O(3) revealed pseudo-cubic symmetry and showed a linear dielectric response. The existence of a nearly flat temperature dependence of the relative permittivity over the temperature range of 100 to 350°C was also obtained. In this study, the effects of cation non-stoichiometry and doping were investigated in an attempt to optimize the insulation resistance for high-temperature applications. The dielectric response of (Ba(0.8)-xBi(0.2))(Zn(0.1)Ti(0.9)) O(3) ceramics where 0 ≤ X ≤ 0.08, as well as ZrO2- and Mn(2)O(3)-doped ceramics were studied. The optimum compositions exhibited a relative permittivity in excess of 1150 with a low loss tangent (tan δ < 0.05) that persisted up to a temperature of 460δC. The temperature dependence of resistivity also revealed the improved insulation resistance of Ba-deficient compositions. Additionally, we suggest that an ionic conduction mechanism is responsible for the degradation of resistivity at high temperatures. The temperature coefficient of permittivity ((τ)K) and the RC time constant were also investigated.

Temperature Dependence of Electrical Resistance of Woven Melt-Infiltrated SiCf/SiC Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Appleby, Matthew P.; Morscher, Gregory N.; Zhu, Dongming

2016-01-01

Recent studies have successfully shown the use of electrical resistance (ER)measurements to monitor room temperature damage accumulation in SiC fiber reinforced SiC matrix composites (SiCf/SiC) Ceramic Matrix Composites (CMCs). In order to determine the feasibility of resistance monitoring at elevated temperatures, the present work investigates the temperature dependent electrical response of various MI (Melt Infiltrated)-CVI (Chemical Vapor Infiltrated) SiC/SiC composites containing Hi-Nicalon Type S, Tyranno ZMI and SA reinforcing fibers. Test were conducted using a commercially available isothermal testing apparatus as well as a novel, laser-based heating approach developed to more accurately simulate thermomechanical testing of CMCs. Secondly, a post-test inspection technique is demonstrated to show the effect of high-temperature exposure on electrical properties. Analysis was performed to determine the respective contribution of the fiber and matrix to the overall composite conductivity at elevated temperatures. It was concluded that because the silicon-rich matrix material dominates the electrical response at high temperature, ER monitoring would continue to be a feasible method for monitoring stress dependent matrix cracking of melt-infiltrated SiC/SiC composites under high temperature mechanical testing conditions. Finally, the effect of thermal gradients generated during localized heating of tensile coupons on overall electrical response of the composite is determined.

Plausible carrier transport model in organic-inorganic hybrid perovskite resistive memory devices

NASA Astrophysics Data System (ADS)

Park, Nayoung; Kwon, Yongwoo; Choi, Jaeho; Jang, Ho Won; Cha, Pil-Ryung

2018-04-01

We demonstrate thermally assisted hopping (TAH) as an appropriate carrier transport model for CH3NH3PbI3 resistive memories. Organic semiconductors, including organic-inorganic hybrid perovskites, have been previously speculated to follow the space-charge-limited conduction (SCLC) model. However, the SCLC model cannot reproduce the temperature dependence of experimental current-voltage curves. Instead, the TAH model with temperature-dependent trap densities and a constant trap level are demonstrated to well reproduce the experimental results.

Universal linear-temperature resistivity: possible quantum diffusion transport in strongly correlated superconductors.

PubMed

Hu, Tao; Liu, Yinshang; Xiao, Hong; Mu, Gang; Yang, Yi-Feng

2017-08-25

The strongly correlated electron fluids in high temperature cuprate superconductors demonstrate an anomalous linear temperature (T) dependent resistivity behavior, which persists to a wide temperature range without exhibiting saturation. As cooling down, those electron fluids lose the resistivity and condense into the superfluid. However, the origin of the linear-T resistivity behavior and its relationship to the strongly correlated superconductivity remain a mystery. Here we report a universal relation [Formula: see text], which bridges the slope of the linear-T-dependent resistivity (dρ/dT) to the London penetration depth λ L at zero temperature among cuprate superconductor Bi 2 Sr 2 CaCu 2 O 8+δ and heavy fermion superconductors CeCoIn 5 , where μ 0 is vacuum permeability, k B is the Boltzmann constant and ħ is the reduced Planck constant. We extend this scaling relation to different systems and found that it holds for other cuprate, pnictide and heavy fermion superconductors as well, regardless of the significant differences in the strength of electronic correlations, transport directions, and doping levels. Our analysis suggests that the scaling relation in strongly correlated superconductors could be described as a hydrodynamic diffusive transport, with the diffusion coefficient (D) approaching the quantum limit D ~ ħ/m*, where m* is the quasi-particle effective mass.

Low-temperature electrical resistivity of transition-metal carbides

NASA Astrophysics Data System (ADS)

Allison, C. Y.; Finch, C. B.; Foegelle, M. D.; Modine, F. A.

1988-10-01

The electrical resistivities of single crystals of ZrC 0.93, VC 0.88, NbC 0.95, and TaC 0.99 were measured from liquid helium temperature to 350 K. The Bloch-Gruneisen theory of electrical resistivity gives a good fit to the zirconium carbide and the vanadium carbide measurements. In contrast, the resistivities of the two superconducting crystals, tantalum carbide and niobium carbide, show excellent agreement with the Wilson model. The appropriate model appears to depend upon the superconducting properties of the crystals.

Pressure dependence of coherence-incoherence crossover behavior in KFe2As2 observed by resistivity and 75As-NMR/NQR

NASA Astrophysics Data System (ADS)

Wiecki, P.; Taufour, V.; Chung, D. Y.; Kanatzidis, M. G.; Bud'ko, S. L.; Canfield, P. C.; Furukawa, Y.

2018-02-01

We present the results of 75As nuclear magnetic resonance (NMR), nuclear quadrupole resonance (NQR), and resistivity measurements in KFe2As2 under pressure (p ). The temperature dependence of the NMR shift, nuclear spin-lattice relaxation time (T1), and resistivity show a crossover between a high-temperature incoherent, local-moment behavior and a low-temperature coherent behavior at a crossover temperature (T*). T* is found to increase monotonically with pressure, consistent with increasing hybridization between localized 3 d orbital-derived bands with the itinerant electron bands. No anomaly in T* is seen at the critical pressure pc=1.8 GPa where a change of slope of the superconducting (SC) transition temperature Tc(p ) has been observed. In contrast, Tc(p ) seems to correlate with antiferromagnetic spin fluctuations in the normal state as measured by the NQR 1 /T1 data, although such a correlation cannot be seen in the replacement effects of A in the A Fe2As2 (A =K , Rb, Cs) family. In the superconducting state, two T1 components are observed at low temperatures, suggesting the existence of two distinct local electronic environments. The temperature dependence of the short T1 s indicates a nearly gapless state below Tc. On the other hand, the temperature dependence of the long component 1 /T1 L implies a large reduction in the density of states at the Fermi level due to the SC gap formation. These results suggest a real-space modulation of the local SC gap structure in KFe2As2 under pressure.

A study of electron and thermal transport in layered titanium disulphide single crystals

NASA Astrophysics Data System (ADS)

Suri, Dhavala; Siva, Vantari; Joshi, Shalikram; Senapati, Kartik; Sahoo, P. K.; Varma, Shikha; Patel, R. S.

2017-12-01

We present a detailed study of thermal and electrical transport behavior of single crystal titanium disulphide flakes, which belong to the two dimensional, transition metal dichalcogenide class of materials. In-plane Seebeck effect measurements revealed a typical metal-like linear temperature dependence in the range of 85-285 K. Electrical transport measurements with in-plane current geometry exhibited a nearly T 2 dependence of resistivity in the range of 42-300 K. However, transport measurements along the out-of-plane current geometry showed a transition in temperature dependence of resistivity from T 2 to T 5 beyond 200 K. Interestingly, Au ion-irradiated TiS2 samples showed a similar T 5 dependence of resistivity beyond 200 K, even in the current-in-plane geometry. Micro-Raman measurements were performed to study the phonon modes in both pristine and ion-irradiated TiS2 crystals.

Temperature dependent relaxation of interface-states in graphene on SiO2

NASA Astrophysics Data System (ADS)

Singh, Anil Kumar; Gupta, Anjan Kumar

2018-04-01

We have studied the evolution of resistance relaxation with temperature in graphene field effect transistor on SiO2. At room temperature, piranha-cleaned-SiO2 devices show slow resistance relaxation while IPA-cleaned-SiO2 devices do not. With cooling the former devices show a decrease in magnitude and time constant of the slow relaxation and it becomes negligible at 250K. Relaxation study at elevated temperature of the IPA-cleaned devices show a gate voltage polarity dependent time constant with respect to the charge neutrality point but it remains almost independent of temperature. The magnitude of relaxation increases with temperature. Further, after annealing at elevated temperature, we found that the relaxation times become independent of gate voltage polarity and its magnitude becomes very small. These observations are discussed using increase in diffusion of interface-species with temperature.

The Effect of Temperature and Host Plant Resistance on Population Growth of the Soybean Aphid Biotype 1 (Hemiptera: Aphididae).

PubMed

Hough, Ashley R; Nechols, James R; McCornack, Brian P; Margolies, David C; Sandercock, Brett K; Yan, Donglin; Murray, Leigh

2017-02-01

A laboratory experiment was conducted to evaluate direct and indirect effects of temperature on demographic traits and population growth of biotype 1 of the soybean aphid, Aphis glycines Matsumura. Our objectives were to better understand how temperature influences the expression of host plant resistance, quantify the individual and interactive effects of plant resistance and temperature on soybean aphid population growth, and generate thermal constants for predicting temperature-dependent development on both susceptible and resistant soybeans. To assess indirect (plant-mediated) effects, soybean aphids were reared under a range of temperatures (15-30 °C) on soybean seedlings from a line expressing a Rag1 gene for resistance, and life history traits were quantified and compared to those obtained for soybean aphids on a susceptible soybean line. Direct effects of temperature were obtained by comparing relative differences in the magnitude of life-history traits among temperatures on susceptible soybeans. We predicted that temperature and host plant resistance would have a combined, but asymmetrical, effect on soybean aphid fitness and population growth. Results showed that temperature and plant resistance influenced preimaginal development and survival, progeny produced, and adult longevity. There also appeared to be a complex interaction between temperature and plant resistance for survival and developmental rate. Evidence suggested that the level of plant resistance increased at higher, but not lower, temperature. Soybean aphids required about the same number of degree-days to develop on resistant and susceptible plants. Our results will be useful for making predictions of soybean aphid population growth on resistant plants under different seasonal temperatures. © The Authors 2016. Published by Oxford University Press on behalf of Entomological Society of America. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes

NASA Astrophysics Data System (ADS)

Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Rao, S.; Della Corte, F. G.

2015-07-01

In this work different experimental current-voltage behaviours of several Al implanted 4H-SiC p-i-n diodes are investigated by means of numerical simulations in a wide range of currents and temperatures. Some devices for which recombination and tunneling are the dominant current processes at all biases are classified as "leaky" diodes. The well behaved diodes, instead, show good rectifying characteristics with a current conduction due to tunneling below 1.7 V, recombination between 1.7 V and 2.5 V, and diffusion processes above 2.5 V. At higher current regimes, a series resistance in excess of 1 mΩ cm2 becomes the main current limiting factor. Depending on the relative weight between the contact resistances and the internal diode resistance, different temperature dependencies of the current are obtained. A good agreement between numerical and measured data is achieved employing temperature-dependent carrier lifetime and mobility as fitting parameters.

Low temperature resistivity plateau and non-saturating magnetoresistance in Type-II Weyl semimetal WP2

NASA Astrophysics Data System (ADS)

Nagpal, V.; Kumar, P.; Sudesh, Patnaik, S.

2018-04-01

We have studied the resistivity and magnetoresistance (MR) properties of the recently predicted type-II Weyl semimetal WP2. Polycrystalline WP2 is synthesized using solid state reaction and crystallizes in an orthorhombic structure with the Cmc21 spacegroup. The temperature dependent resistivity is enhanced with the application of magnetic field and a resistivity plateau is observed at low temperatures. We find a small dip in resistivity around 30K at 5T field suggesting that there might be a metal-insulator-like transition at higher magnetic fields. A non-saturating magnetoresistance is observed at low temperatures with maximum MR ˜ 94% at 2K and 6T. The value of MR decreases with the increase in temperature. We see a deviation from Kohler's power law which implies that the system comprises of two types of charge carriers.

Examination of the temperature dependent electronic behavior of GeTe for switching applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Champlain, James G.; Ruppalt, Laura B.; Guyette, Andrew C.

2016-06-28

The DC and RF electronic behaviors of GeTe-based phase change material switches as a function of temperature, from 25 K to 375 K, have been examined. In its polycrystalline (ON) state, GeTe behaved as a degenerate p-type semiconductor, exhibiting metal-like temperature dependence in the DC regime. This was consistent with the polycrystalline (ON) state RF performance of the switch, which exhibited low resistance S-parameter characteristics. In its amorphous (OFF) state, the GeTe presented significantly greater DC resistance that varied considerably with bias and temperature. At low biases (<1 V) and temperatures (<200 K), the amorphous GeTe low-field resistance dramatically increased, resulting in exceptionally highmore » amorphous-polycrystalline (OFF-ON) resistance ratios, exceeding 10{sup 9} at cryogenic temperatures. At higher biases and temperatures, the amorphous GeTe exhibited nonlinear current-voltage characteristics that were best fit by a space-charge limited conduction model that incorporates the effect of a defect band. The observed conduction behavior suggests the presence of two regions of localized traps within the bandgap of the amorphous GeTe, located at approximately 0.26–0.27 eV and 0.56–0.57 eV from the valence band. Unlike the polycrystalline state, the high resistance DC behavior of amorphous GeTe does not translate to the RF switch performance; instead, a parasitic capacitance associated with the RF switch geometry dominates OFF state RF transmission.« less

The Effect of Boronizing on Metallic Alloys for Automotive Applications

NASA Astrophysics Data System (ADS)

Petrova, Roumiana S.; Suwattananont, Naruemon; Samardzic, Veljko

2008-06-01

In this study the wear resistance, corrosion resistance, and oxidation resistance of boronized metallic alloys were investigated. Thermochemical treatment was performed by powder pack boronizing process at temperature 850-950 °C for 4 h. Saw-tooth morphology and smooth interface microstructures were observed with an optical microscope; microhardness was measured across the coating depth. The phases present in the boron coatings depend on the substrate material. High-temperature oxidation resistance was investigated and it was found that boron coating on ferrous alloys can resist temperatures up to 800 °C. The corrosion resistance of the boronized samples was improved and the corrosion rate was calculated for boronized and plain specimens. Wear testing was conducted by following the procedures of ASTM G99, ASTM D2526, and ASTM D4060. The obtained experimental results revealed that boronizing significantly improves the wear-resistance, corrosion-resistance, and oxidation resistance of metallic alloys.

Dependence of defect introduction on temperature and resistivity and some long-term annealing effects

NASA Technical Reports Server (NTRS)

Brucker, G. J.

1971-01-01

The effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.

Pressure and magnetic field effects on the valence transition of EuRh2Si2

NASA Astrophysics Data System (ADS)

Mitsuda, Akihiro; Kishaba, Eigo; Fujimoto, Takumi; Oyama, Kohei; Wada, Hirofumi; Mizumaki, Masaichiro; Kawamura, Naomi; Ishimatsu, Naoki

2018-05-01

We have measured the X-ray absorption spectra (XAS), electrical resistivity and magnetic susceptibility of EuRh2Si2, which undergoes a valence transition under high pressures. A sharp decrease in the Eu valence determined from the XAS was observed at around 70 K in the temperature dependence at P = 1.2-1.9 GPa. In the temperature dependence of electrical resistivity and magnetic susceptibility, we observed jumps associated with the temperature-induced valence transition under high pressures. The magnetoresistance detected a field-induced valence transition. The results are discussed from the thermodynamic point of view.

Thickness and temperature dependent electrical characteristics of crystalline BaxSr1-xTiO3 thin films

NASA Astrophysics Data System (ADS)

Panda, B.; Roy, A.; Dhar, A.; Ray, S. K.

2007-03-01

Polycrystalline Ba1-xSrxTiO3 (BST) thin films with three different compositions have been deposited by radio-frequency magnetron sputtering technique on platinum coated silicon substrates. Samples with buffer and barrier layers for different film thicknesses and processing temperatures have been studied. Crystallite size of BST films has been found to increase with increasing substrate temperature. Thickness dependent dielectric constant has been studied and discussed in the light of an interfacial dead layer and the finite screening length of the electrode. Ferroelectric properties of the films have also been studied for various deposition conditions. The electrical resistivity of the films measured at different temperatures shows a positive temperature coefficient of resistance under a constant bias voltage.

Temperature-Dependent Wsm1 and Wsm2 Gene-Specific Blockage of Viral Long-Distance Transport Provides Resistance to Wheat streak mosaic virus and Triticum mosaic virus in Wheat.

PubMed

Tatineni, Satyanarayana; Wosula, Everlyne N; Bartels, Melissa; Hein, Gary L; Graybosch, Robert A

2016-09-01

Wheat streak mosaic virus (WSMV) and Triticum mosaic virus (TriMV) are economically important viral pathogens of wheat. Wheat cvs. Mace, carrying the Wsm1 gene, is resistant to WSMV and TriMV, and Snowmass, with Wsm2, is resistant to WSMV. Viral resistance in both cultivars is temperature sensitive and is effective at 18°C or below but not at higher temperatures. The underlying mechanisms of viral resistance of Wsm1 and Wsm2, nonallelic single dominant genes, are not known. In this study, we found that fluorescent protein-tagged WSMV and TriMV elicited foci that were approximately similar in number and size at 18 and 24°C, on inoculated leaves of resistant and susceptible wheat cultivars. These data suggest that resistant wheat cultivars at 18°C facilitated efficient cell-to-cell movement. Additionally, WSMV and TriMV efficiently replicated in inoculated leaves of resistant wheat cultivars at 18°C but failed to establish systemic infection, suggesting that Wsm1- and Wsm2-mediated resistance debilitated viral long-distance transport. Furthermore, we found that neither virus was able to enter the leaf sheaths of inoculated leaves or crowns of resistant wheat cultivars at 18°C but both were able to do so at 24°C. Thus, wheat cvs. Mace and Snowmass provide resistance at the long-distance movement stage by specifically blocking virus entry into the vasculature. Taken together, these data suggest that both Wsm1 and Wsm2 genes similarly confer virus resistance by temperature-dependent impairment of viral long-distance movement.

Dependence of trapped-flux-induced surface resistance of a large-grain Nb superconducting radio-frequency cavity on spatial temperature gradient during cooldown through T c

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Shichun; Kubo, Takayuki; Geng, R. L.

Recent studies by Romanenko et al. revealed that cooling down a superconducting cavity under a large spatial temperature gradient decreases the amount of trapped flux and leads to reduction of the residual surface resistance. In the present paper, the flux expulsion ratio and the trapped-flux-induced surface resistance of a large-grain cavity cooled down under a spatial temperature gradient up to 80K/m are studied under various applied magnetic fields from 5E-6 T to 2E-5 T. We show the flux expulsion ratio improves as the spatial temperature gradient increases, independent of the applied magnetic field: our results supports and enforces the previousmore » studies. We then analyze all RF measurement results obtained under different applied magnetic fields together by plotting the trapped- flux-induced surface resistance normalized by the applied magnetic field as a function of the spatial temperature gradient. All the data can be fitted by a single curve, which defines an empirical formula for the trapped- flux-induced surface resistance as a function of the spatial temperature gradient and applied magnetic field. The formula can fit not only the present results but also those obtained by Romanenko et al. previously. Furthermore, the sensitivity r fl of surface resistance from trapped magnetic flux of fine-grain and large-grain niobium cavities and the origin of dT/ds dependence of R fl/B a are also discussed.« less

Dependence of trapped-flux-induced surface resistance of a large-grain Nb superconducting radio-frequency cavity on spatial temperature gradient during cooldown through T c

DOE PAGES

Huang, Shichun; Kubo, Takayuki; Geng, R. L.

2016-08-26

Recent studies by Romanenko et al. revealed that cooling down a superconducting cavity under a large spatial temperature gradient decreases the amount of trapped flux and leads to reduction of the residual surface resistance. In the present paper, the flux expulsion ratio and the trapped-flux-induced surface resistance of a large-grain cavity cooled down under a spatial temperature gradient up to 80K/m are studied under various applied magnetic fields from 5E-6 T to 2E-5 T. We show the flux expulsion ratio improves as the spatial temperature gradient increases, independent of the applied magnetic field: our results supports and enforces the previousmore » studies. We then analyze all RF measurement results obtained under different applied magnetic fields together by plotting the trapped- flux-induced surface resistance normalized by the applied magnetic field as a function of the spatial temperature gradient. All the data can be fitted by a single curve, which defines an empirical formula for the trapped- flux-induced surface resistance as a function of the spatial temperature gradient and applied magnetic field. The formula can fit not only the present results but also those obtained by Romanenko et al. previously. Furthermore, the sensitivity r fl of surface resistance from trapped magnetic flux of fine-grain and large-grain niobium cavities and the origin of dT/ds dependence of R fl/B a are also discussed.« less

Decreasing electrical resistivity of silver along the melting boundary up to 5 GPa

NASA Astrophysics Data System (ADS)

Littleton, Joshua A. H.; Secco, Richard A.; Yong, Wenjun

2018-04-01

The electrical resistivity of Ag was experimentally measured at high pressures up to 5 GPa and at temperatures up to ∼300 K above melting. The resistivity decreased as a function of pressure and increased as a function of temperature as expected and is in very good agreement with 1 atm data. Observed melting temperatures at high pressures also agree well with previous experimental and theoretical studies. The main finding of this study is that resistivity of Ag decreases along the pressure- and temperature-dependent melting boundary, in conflict with prediction of resistivity invariance. This result is discussed in terms of the dominant contribution of the increasing energy separation between the Fermi level and 4d-band as a function of pressure. Calculated from the resistivity using the Wiedemann-Franz law, the electronic thermal conductivity increased as a function of pressure and decreased as a function of temperature as expected. The decrease in the high pressure thermal conductivity in the liquid phase as a function of temperature contrasts with the behavior of the 1 atm data.

The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

NASA Technical Reports Server (NTRS)

Littlejohn, M. A.; Anikara, R.

1972-01-01

The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

Apparatus for measurement of critical current in superconductive tapes

DOEpatents

Coulter, J. Yates; DePaula, Raymond

2002-01-01

A cryogenic linear positioner which is primarily used for characterizing coated conductor critical current homogeneity at 75K is disclosed. Additionally, this tool can be used to measure the positional dependence of the coated conductor resistance at room temperature, and the room temperature resistance of the underlying YBCB coating without the overlaying protective cover of silver.

Pressure Dependence of Coherence-Incoherence Crossover Behavior in KFe 2As 2 Observed by Resistivity and 75As-NMR/NQR.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiecki, P.; Taufour, V.; Chung, D. Y.

We present the results of 75As nuclear magnetic resonance (NMR), nuclear quadrupole resonance (NQR), and resistivity measurements in KFe 2As 2 under pressure (p). The temperature dependence of the NMR shift, nuclear spin-lattice relaxation time (T1), and resistivity show a crossover between a high-temperature incoherent, local-moment behavior and a low-temperature coherent behavior at a crossover temperature (T *). T * is found to increase monotonically with pressure, consistent with increasing hybridization between localized 3d orbitalderived bands with the itinerant electron bands. No anomaly in T * is seen at the critical pressure pc = 1.8 GPa where a change ofmore » slope of the superconducting (SC) transition temperature Tc(p) has been observed. In contrast, Tc(p) seems to correlate with antiferromagnetic spin fluctuations in the normal state as measured by the NQR 1/T1 data, although such a correlation cannot be seen in the replacement effects of A in the KFe 2As 2 (A = K, Rb, Cs) family. In the superconducting state, two T1 components are observed at low temperatures, suggesting the existence of two distinct local electronic environments. The temperature dependence of the short T1s indicates a nearly gapless state below Tc. On the other hand, the temperature dependence of the long component 1/T1L implies a large reduction in the density of states at the Fermi level due to the SC gap formation. These results suggest a real-space modulation of the local SC gap structure in KFe 2As 2 under pressure.« less

Pressure dependence of coherence-incoherence crossover behavior in KFe 2 As 2 observed by resistivity and As 75 -NMR/NQR

DOE PAGES

Wiecki, P.; Taufour, V.; Chung, D. Y.; ...

2018-02-13

We present the results of 75As nuclear magnetic resonance (NMR), nuclear quadrupole resonance (NQR), and resistivity measurements in KF e2 As 2 under pressure (p). The temperature dependence of the NMR shift, nuclear spin-lattice relaxation time (T 1), and resistivity show a crossover between a high-temperature incoherent, local-moment behavior and a low-temperature coherent behavior at a crossover temperature (T*). T* is found to increase monotonically with pressure, consistent with increasing hybridization between localized 3d orbital-derived bands with the itinerant electron bands. No anomaly in T* is seen at the critical pressure p c= 1.8 GPa where a change of slopemore » of the superconducting (SC) transition temperature T c( p ) has been observed. In contrast, T c( p ) seems to correlate with antiferromagnetic spin fluctuations in the normal state as measured by the NQR 1/T 1 data, although such a correlation cannot be seen in the replacement effects of A in the AFe 2As 2 (A=K,Rb,Cs) family. In the superconducting state, two T 1 components are observed at low temperatures, suggesting the existence of two distinct local electronic environments. The temperature dependence of the short T 1s indicates a nearly gapless state below T c. On the other hand, the temperature dependence of the long component 1/T 1Limplies a large reduction in the density of states at the Fermi level due to the SC gap formation. These results suggest a real-space modulation of the local SC gap structure in KFe 2As 2 under pressure.« less

Pressure dependence of coherence-incoherence crossover behavior in KFe 2 As 2 observed by resistivity and As 75 -NMR/NQR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiecki, P.; Taufour, V.; Chung, D. Y.

We present the results of 75As nuclear magnetic resonance (NMR), nuclear quadrupole resonance (NQR), and resistivity measurements in KF e2 As 2 under pressure (p). The temperature dependence of the NMR shift, nuclear spin-lattice relaxation time (T 1), and resistivity show a crossover between a high-temperature incoherent, local-moment behavior and a low-temperature coherent behavior at a crossover temperature (T*). T* is found to increase monotonically with pressure, consistent with increasing hybridization between localized 3d orbital-derived bands with the itinerant electron bands. No anomaly in T* is seen at the critical pressure p c= 1.8 GPa where a change of slopemore » of the superconducting (SC) transition temperature T c( p ) has been observed. In contrast, T c( p ) seems to correlate with antiferromagnetic spin fluctuations in the normal state as measured by the NQR 1/T 1 data, although such a correlation cannot be seen in the replacement effects of A in the AFe 2As 2 (A=K,Rb,Cs) family. In the superconducting state, two T 1 components are observed at low temperatures, suggesting the existence of two distinct local electronic environments. The temperature dependence of the short T 1s indicates a nearly gapless state below T c. On the other hand, the temperature dependence of the long component 1/T 1Limplies a large reduction in the density of states at the Fermi level due to the SC gap formation. These results suggest a real-space modulation of the local SC gap structure in KFe 2As 2 under pressure.« less

Magnetization and transport properties of single RPd2P2 (R=Y, La-Nd, Sm-Ho, Yb)

NASA Astrophysics Data System (ADS)

Drachuck, Gil; Boehmer, Anna; Bud'Ko, Sergey L.; Canfield, Paul

Single crystals of RPd2P2 (R=Y, La-Nd, Sm-Ho, Yb) were grown using a self-flux method and were characterized by room-temperature powder X-ray diffraction, anisotropic temperature and field dependent magnetization and temperature dependent in-plane resistivity. Anisotropic magnetic properties, arising mostly from crystal electric field (CEF) effects, were observed for most magnetic rare earths. The experimentally estimated CEF parameters B02 were calculated from the anisotropic paramagnetic θab and θcvalues. Ordering temperatures, as well as the polycrystalline averaged paramagnetic Curie-Weiss temperature, θave, were extracted from magnetization and resistivity measurements. Work done at Ames Laboratory was supported by US Department of Energy, Basic Energy Sciences, Division of Materials Sciences and Engineering under Contract No. DE-AC02-07CH111358.

Role of antimony in the charge transport mechanisms for La0.67Ca0.33Mn1-xSbxO3 manganites

NASA Astrophysics Data System (ADS)

Kataria, B. R.; Solanki, Pankaj; Pandya, D. D.; Solanki, P. S.; Shah, N. A.

2018-07-01

Single phasic La0.67Ca0.33Mn1-xSbxO3 (LCMSO; x = 0.00, 0.02, 0.04, 0.06, 0.08 and 0.10) samples were characterized by performing temperature and magnetic field dependent resistance measurements. Present study, mainly, aims for the better understanding of possible charge conduction mechanisms responsible for the low temperature resistivity and high temperature [well above metal to insulator transition temperature (TP)] semiconducting regions. Variation in resistivity and TP with Sb5+ content (x) and applied magnetic field has been discussed in the light of the modifications in structural and magnetic lattices of smaller diamagnetic Sb5+ doped LCMSO system. Various models and mechanisms have been theoretical employed to fit obtained experimental resistivity data for the low temperature resistivity and semiconducting regions of all LCMSO manganites. It is found that low temperature resistivity minima follows the coulomb blockade model while charge conduction in the semiconducting region obeys the variable range hopping (VRH) mechanism. Variation in low temperature blocking energy, activation energy in semiconducting region and magnetoresistance (MR) with Sb5+ content (x) and applied magnetic field has been discussed in detail.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mun, Eundeok; Bud'ko, Sergey L.; Canfield, Paul C.

We present the magnetic field dependencies of transport properties for RPtBi ( R = Gd, Dy, Tm, and Lu) half-Heusler compounds. Temperature- and field-dependent resistivity measurements of high-quality RPtBi single crystals reveal an unusually large, nonsaturating magnetoresistance (MR) up to 300 K under a moderate magnetic field of H = 140 kOe. At 300 K, the large MR effect decreases as the rare earth is traversed from Gd to Lu and the magnetic field dependence of MR shows a deviation from the conventional H2 behavior. The Hall coefficient ( RH) for R = Gd indicates a sign change around 120more » K, whereas RH curves for R = Dy, Tm, and Lu remain positive for all measured temperatures. At 300 K, the Hall resistivity reveals a deviation from the linear field dependence for all compounds. Thermoelectric power measurements on this family show strong temperature and magnetic field dependencies which are consistent with resistivity measurements. A highly enhanced thermoelectric power under applied magnetic field is observed as high as ~100 μV/K at 140 kOe. Furthermore, analysis of the transport data in this series reveals that the rare-earth-based half-Heusler compounds provide opportunities to tune MR effect through lanthanide contraction and to elucidate the mechanism of nontrivial MR.« less

Superconductivity at 52.5 K in the lanthanum-barium-copper-oxide system

NASA Technical Reports Server (NTRS)

Chu, C. W.; Hor, P. H.; Meng, R. L.; Gao, L.; Huang, Z. J.

1987-01-01

The electrical properties of the (La/0/9/Ba/0.1/)CuO/4-y/ system are examined under ambient and hydrostatic pressures. The resistance, ac magnetic susceptibility, and superconductivity onset, midpoint, and intercept temperatures are measured. It is observed that at ambient pressure the resistance decreases with temperature decreases, and the ac susceptibility shows diamagnetic shifts starting at about 32 K. Under hydrostatic pressure a superconducting transition with an onset temperature of 52.5 K is observed, and the resistance increases at lower temperatures. The data reveal that the electrical properties of the La-Ba-Cu-O system are dependent on samples and preparation conditions. Various causes for the high temperature superconductivity of the system are proposed.

Temperature induces trade-offs between development and starvation resistance in Aedes aegypti (L.) larvae.

PubMed

Padmanabha, H; Lord, C C; Lounibos, L P

2011-12-01

Heightened temperature increases the development rate of mosquitoes. However, in Aedes aegypti (Diptera: Culicidae), the larvae of which commonly experience limited access to food in urban habitats, temperature effects on adult production may also be influenced by changes in the capacity of larvae to survive without food. We carried out experiments to investigate the effects of temperatures increasing at intervals of 2 °C from 20 °C to 30 °C on the growth, maturation rate and longevity of optimally fed larvae placed in starvation. Overall, both growth rate and starvation resistance were lower in the first three larval instars (L1-L3) compared with L4, in which growth of >75% occurred. Although increasing the temperature reduced the duration of each instar, it had a U-shaped impact in terms of the effect of initial growth on starvation resistance, which increased from L1 to L2 at 20 °C and 30 °C, remained constant at 22 °C and 28 °C, and decreased at 24 °C and 26 °C. Growth from L2 to L3 significantly increased starvation resistance only from 26 °C to 30 °C. Increased temperature (>22 °C) consistently reduced starvation resistance in L1. In L2-L4, increments of 2 °C decreased starvation resistance between 20 °C and 24 °C, but had weaker and instar-specific effects at >24 °C. These data show that starvation resistance in Ae. aegypti depends on both instar and temperature, indicating a trade-off between increased development rate and reduced starvation survival of early-instar larvae, particularly in the lower and middle temperatures of the dengue-endemic range of 20-30 °C. We suggest that anabolic and catabolic processes in larvae have distinct temperature dependencies, which may ultimately cause temperature to modify the density regulation of Ae. aegypti populations. © 2011 The Authors. Medical and Veterinary Entomology © 2011 The Royal Entomological Society.

Polymer/Solvent and Polymer/Polymer Interaction Studies

DTIC Science & Technology

1980-09-01

temperatures up to 450 12 before serious degradation occurs. They have good hydrolytic stability, good solvent resistance, and excellent thermo- oxidative ...Concentration for Sorption in Glassy PVC 5 Temperature Dependence of the Flory-Huggins Interaction Parameters 115 6 Solubility of Dichloromethane in Polysulfone...116 7 Test of Applicability of the Langmuir Equation for Describing Sorption Data 117 8 Temperature Dependence of the Specific Volume of an Amorphous

Synthesis and thermal conductivity of type II silicon clathrates

NASA Astrophysics Data System (ADS)

Beekman, M.; Nolas, G. S.

2006-08-01

We have synthesized and characterized polycrystalline Na 1Si 136 and Na 8Si 136, compounds possessing the type II clathrate hydrate crystal structure. Resistivity measurements from 10 to 300 K indicate very large resistivities in this temperature range, with activated temperature dependences indicative of relatively large band gap semiconductors. The thermal conductivity is very low; two orders-of-magnitude lower than that of diamond-structure silicon at room temperature. The thermal conductivity of Na 8Si 136 displays a temperature dependence that is atypical of crystalline solids and more indicative of amorphous materials. This work is part of a continuing effort to explore the many different compositions and structure types of clathrates, a class of materials that continues to be of interest for scientific and technological applications.

Creep resistance. [of high temperature alloys

NASA Technical Reports Server (NTRS)

Tien, J. K.; Malu, M.; Purushothaman, S.

1976-01-01

High-temperature structural applications usually require creep resistance because some average stress is maintained for prolonged periods. Alloy and microstructural design guidelines for creep resistance are presented through established knowledge on creep behavior and its functional dependences on alloy microstructure. Important considerations related to creep resistance of alloys as well as those that are harmful to high-temperature properties are examined. Although most of the creep models do not predict observed creep behavior quantitatively, they are sophisticated enough to provide alloy or microstructural design guidelines. It is shown that creep-resistant microstructures are usually in conflict with microstructures that improve such other properties as stress rupture ductility. Greater understanding of the effects of environments on creep and stress rupture behavior of materials is necessary before one can optimally design alloys for applications in different environments.

Semiconductor-like behavior in superconducting Nb/Al films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greco, M.; Menichetti, E.; Rinaudo, G.

1999-04-20

The authors report here the experimental evidence of semiconductor-superconductor transitions in relatively thick Nb/Al structures. The temperature dependence of resistivity {rho}(T) shows a sharp superconducting transition followed by either a normal metallic behavior in low-resistivity samples, or a semiconducting behavior when the sample resistivity at 10 K is above 100 {mu}{Omega} cm. The authors discuss here the fabrication conditions and the electron localization regime associated with the measured {rho}(T) dependence.

Selectivity of the gas sensor based on the 50%In2O3-50%Ga2O3 thin film in dynamic mode of operation

NASA Astrophysics Data System (ADS)

Demin, I. E.; Kozlov, A. G.

2018-01-01

The article considers the gas sensor with the sensitive layer based on the 50%In2O3 -50%Ga2O3 thin film. The temperature and concentration dependencies of gas-induced resistance response of this sensor and the dynamical dependencies of its resistance response on the test gases in air are investigated. The test gases were ethanol, acetone, ammonia and liquefied petroleum gas. The information parameters of the sensor in the dynamical mode of operation were considered to improve its selectivity. The presented results show that the selectivity of the sensor in this mode may be improved by using the following information parameters: gas-induced resistance response in steady state, activation energy of the response and pre-exponential factor of the temperature dependence of the response time constant.

Anisotropic physical properties and pressure dependent magnetic ordering of CrAuTe 4

DOE PAGES

Jo, Na Hyun; Kaluarachchi, Udhara S.; Wu, Yun; ...

2016-11-11

Systematic measurements of temperature-dependent magnetization, resistivity, and angle-resolved photoemission spectroscopy (ARPES) at ambient pressure as well as resistivity under pressures up to 5.25 GPa were conducted on single crystals of CrAuTe 4. Magnetization data suggest that magnetic moments are aligned antiferromagnetically along the crystallographic c axis below T N = 255 K. ARPES measurements show band reconstruction due to the magnetic ordering. Magnetoresistance data show clear anisotropy, and, at high fields, quantum oscillations. The Néel temperature decreases monotonically under pressure, decreasing to T N = 236 K at 5.22 GPa. The pressure dependencies of (i) T N, (ii) the residualmore » resistivity ratio, and (iii) the size and power-law behavior of the low-temperature magnetoresistance all show anomalies near 2 GPa suggesting that there may be a phase transition (structural, magnetic, and/or electronic) induced by pressure. Lastly, for pressures higher than 2 GPa a significantly different quantum oscillation frequency emerges, consistent with a pressure induced change in the electronic states.« less

Electronic transport properties of single-crystal bismuth nanowire arrays

NASA Astrophysics Data System (ADS)

Zhang, Zhibo; Sun, Xiangzhong; Dresselhaus, M. S.; Ying, Jackie Y.; Heremans, J.

2000-02-01

We present here a detailed study of the electrical transport properties of single-crystal bismuth nanowire arrays embedded in a dielectric matrix. Measurements of the resistance of Bi nanowire arrays with different wire diameters (60-110 nm) have been carried out over a wide range of temperatures (2.0-300 K) and magnetic fields (0-5.4 T). The transport properties of a heavily Te-doped Bi nanowire array have also been studied. At low temperatures, we show that the wire boundary scattering is the dominant scattering process for carriers in the undoped single-crystal Bi nanowires, while boundary scattering is less important for a heavily Te-doped sample, consistent with general theoretical considerations. The temperature dependences of the zero-field resistivity and of the longitudinal magneto-coefficient of the Bi nanowires were also studied and were found to be sensitive to the wire diameter. The quantum confinement of carriers is believed to play an important role in determining the overall temperature dependence of the zero-field resistivity. Theoretical considerations of the quantum confinement effects on the electronic band structure and on the transport properties of Bi nanowires are discussed. Despite the evidence for localization effects and diffusive electron interactions at low temperatures (T<=4.0 K), localization effects are not the dominant mechanisms affecting the resistivity or the magnetoresistance in the temperature range of this study.

Nonlinear resistivity for magnetohydrodynamical models

DOE PAGES

Lingam, M.; Hirvijoki, E.; Pfefferlé, D.; ...

2017-04-20

A new formulation of the plasma resistivity that stems from the collisional momentum-transfer rate between electrons and ions is presented. The resistivity computed herein is shown to depend not only on the temperature and density but also on all other polynomial velocity-space moments of the distribution function, such as the pressure tensor and heat flux vector. The full expression for the collisional momentum-transfer rate is determined and is used to formulate the nonlinear anisotropic resistivity. The new formalism recovers the Spitzer resistivity, as well as the concept of thermal force if the heat flux is assumed to be proportional tomore » a temperature gradient. Furthermore, if the pressure tensor is related to viscous stress, the latter enters the expression for the resistivity. The relative importance of the nonlinear term(s) with respect to the well-established electron inertia and Hall terms is also examined. Lastly, the subtle implications of the nonlinear resistivity, and its dependence on the fluid variables, are discussed in the context of magnetized plasma environments and phenomena such as magnetic reconnection.« less

Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Litwin-Staszewska, E.; Suski, T.; Piotrzkowski, R.

Comprehensive studies of the electrical properties of Mg-doped bulk GaN crystals, grown by high-pressure synthesis, were performed as a function of temperature up to 750{degree}C. Annealing of the samples in nitrogen ambient modifies qualitatively their resistivity values {rho} and the {rho}(T) variation. It was found that our material is characterized by a high concentration of oxygen-related donors and that the charge transport in the studied samples is determined by two types of states, one of shallow character (Mg-related state, E{sub A}{approximately}0.15eV), and the second one much more deep, E{sub 2}{approximately}0.95eV (above the valence band). Depending on the effective concentration ofmore » either states, different resistivities {rho} can be observed: lower resistivity ({rho}{lt}10{sup 4}{Omega}cm at ambient temperature) in samples with dominant E{sub A} states and very high resistivity ({rho}{gt}10{sup 6}{Omega}cm at ambient temperature) in samples with dominant E{sub 2} states. For the first type of samples, annealing at T{sub ann}{lt}500{degree}C leads to a decrease of their resistivity and is associated with an increase of the effective concentration of the shallow Mg acceptors. Annealing of both types of samples at temperatures between 600 and 750{degree}C leads to an increase of the deep state concentration. The presence of hydrogen ambient during annealing of the low-resistivity samples strongly influences their properties. The increase of the sample resistivity and an appearance of a local vibrational mode of hydrogen at 3125 cm{minus}1 were observed. These effects can be removed by annealing in hydrogen-free ambient. {copyright} 2001 American Institute of Physics.« less

Specific features of electrical properties of porous biocarbons prepared from beech wood and wood artificial fiberboards

NASA Astrophysics Data System (ADS)

Popov, V. V.; Orlova, T. S.; Magarino, E. Enrique; Bautista, M. A.; Martínez-Fernández, J.

2011-02-01

This paper reports on comparative investigations of the structural and electrical properties of biomorphic carbons prepared from natural beech wood, as well as medium-density and high-density fiberboards, by means of carbonization at different temperatures T carb in the range 650-1000°C. It has been demonstrated using X-ray diffraction analysis that biocarbons prepared from medium-density and high-density fiberboards at all temperatures T carb contain a nanocrystalline graphite component, namely, three-dimensional crystallites 11-14 Å in size. An increase in the carbonization temperature T carb to 1000°C leads to the appearance of a noticeable fraction of two-dimensional graphene particles with the same sizes. The temperature dependences of the electrical resistivity ρ of the biomorphic carbons have been measured and analyzed in the temperature range 1.8-300 K. For all types of carbons under investigation, an increase in the carbonization temperature T carb from 600 to 900°C leads to a change in the electrical resistivity at T = 300 K by five or six orders of magnitude. The dependences ρ( T) for these materials are adequately described by the Mott law for the variable-range hopping conduction. It has been revealed that the temperature dependence of the electrical resistivity exhibits a hysteresis, which has been attributed to thermomechanical stresses in an inhomogeneous structure of the biocarbon prepared at a low carbonization temperature T carb. The crossover to the conductivity characteristic of disordered metal systems is observed at T carb ≳ 1000°C.

Hyperscaling violating black hole solutions and magneto-thermoelectric DC conductivities in holography

NASA Astrophysics Data System (ADS)

Ge, Xian-Hui; Tian, Yu; Wu, Shang-Yu; Wu, Shao-Feng

2017-08-01

We derive new black hole solutions in Einstein-Maxwell-axion-dilaton theory with a hyperscaling violation exponent. We then examine the corresponding anomalous transport exhibited by cuprate strange metals in the normal phase of high-temperature superconductors via gauge-gravity duality. Linear-temperature-dependence resistivity and quadratic-temperature-dependence inverse Hall angle can be achieved. In the high-temperature regime, the heat conductivity and Hall Lorenz ratio are proportional to the temperature. The Nernst signal first increases as temperature goes up, but it then decreases with increasing temperature in the high-temperature regime.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2016-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Extended investigation of intermartensitic transitions in Ni-Mn-Ga magnetic shape memory alloys: A detailed phase diagram determination

NASA Astrophysics Data System (ADS)

Ćakιr, Aslι; Righi, Lara; Albertini, Franca; Acet, Mehmet; Farle, Michael; Aktürk, Selçuk

2013-11-01

Martensitic transitions in shape memory Ni-Mn-Ga Heusler alloys take place between a high temperature austenite and a low temperature martensite phase. However, intermartensitic transformations have also been encountered that occur from one martensite phase to another. To examine intermartensitic transitions in magnetic shape memory alloys in detail, we carried out temperature dependent magnetization, resistivity, and x-ray diffraction measurements to investigate the intermartensitic transition in Ni50Mn50-xGax in the composition range 12≤x≤25 at. %. Rietveld refined x-ray diffraction results are found to be consistent with magnetization and resistivity data. Depending on composition, we observe that intermartensitic transitions occur in the sequences 7M→L10, 5M →7M, and 5M→7M→L10 with decreasing temperature. The L10 non-modulated structure is most stable at low temperature.

Linear magneto-resistance in Bi{sub 2}SeTe{sub 2} topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amaladass, E. P., E-mail: edward@igcar.gov.in; Sharma, Shilpam; Devidas, T. R.

2016-05-23

Magnetic field and temperature dependent electronic transport measurements have been carried out on Bi{sub 2}SeTe{sub 2} topological insulator single crystals. The measurements reveal an insulating behavior and the carriers were found to be electrons (n-type) from Hall measurement. Magneto-resistance (MR) measurements in the field range (B) of 15 T to -15 T carried out at 4.2 K showed a cusp like weak anti-localization behavior for lower fields (-5 T 5 T. Upon increasing temperature, MR transforms to linear dependence of B at 40, 50 and 100 K. On further increasing temperatures (> 200 K), a parabolic MR is observed. Temperaturemore » dependent Hall data also showed a transition from a nonlinear to linear behavior upon increasing temperatures. Disorder induced changes in the electronic transport characteristics of bulk and surface electrons are believed to cause such changes in the magneto-transport behavior of this system.« less

Temperature-dependent resistance switching in SrTiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jian-kun; University of Chinese Academy of Sciences, Beijing 100049; Ma, Chao

2016-06-13

Resistance switching phenomena were studied by varying temperature in SrTiO{sub 3} single crystal. The resistance hysteresis loops appear at a certain temperature ranging from 340 K to 520 K. With the assistance of 375 nm ultraviolet continuous laser, the sample resistance is greatly reduced, leading to a stable effect than that in dark. These resistance switching phenomena only exist in samples with enough oxygen vacancies, which is confirmed by spherical aberration-corrected scanning transmission electron microscopy measurements, demonstrating an important role played by oxygen vacancies. At temperatures above 340 K, positively charged oxygen vacancies become mobile triggered by external electric field, and the resistance switchingmore » effect emerges. Our theoretical results based on drift-diffusion model reveal that the built-in field caused by oxygen vacancies can be altered under external electric field. Therefore, two resistance states are produced under the cooperative effect of built-in field and external field. However, the increasing mobility of oxygen vacancies caused by higher temperature promotes internal electric field to reach equilibrium states quickly, and suppresses the hysteresis loops above 420 K.« less

Vanadium doped Sb{sub 2}Te{sub 3} material with modified crystallization mechanism for phase-change memory application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Xinglong; Zheng, Yonghui; Zhou, Wangyang

2015-06-15

In this paper, V{sub 0.21}Sb{sub 2}Te{sub 3} (VST) has been proposed for phase-change memory applications. With vanadium incorporating, VST has better thermal stability than Sb{sub 2}Te{sub 3} and can maintain in amorphous phase at room temperature. Two resistance steps were observed in temperature dependent resistance measurements. By real-time observing the temperature dependent lattice structure evolution, VST presents as a homogenous phase throughout the whole thermal process. Combining Hall measurement and transmission electron microscopy results, we can ascribe the two resistance steps to the unique crystallization mechanism of VST material. Then, the amorphous thermal stability enhancement can also be rooted inmore » the suppression of the fast growth crystallization mechanism. Furthermore, the applicability of VST is demonstrated by resistance-voltage measurement, and the phase transition of VST can be triggered by a 15 ns electric pulse. In addition, endurance up to 2.7×10{sup 4} cycles makes VST a promising candidate for phase-change memory applications.« less

Thermal-gradient migration of brine inclusions in salt crystals. [Synthetic single crystals of NaCl and KCl

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yagnik, S.K.

1982-09-01

It has been proposed that high-level nuclear waste be disposed in a geologic repository. Natural-salt deposits, which are being considered for this purpose, contain a small volume fraction of water in the form of brine inclusions distributed throughout the salt. Radioactive-decay heating of the nuclear wastes will impose a temperature gradient on the surrounding salt which mobilizes the brine inclusions. Inclusions filled completely with brine migrate up the temperature gradient and eventually accumulate brine near the buried waste forms. The brine may slowly corrode or degrade the waste forms which is undesirable. In this work, thermal gradient migration of bothmore » all-liquid and gas-liquid inclusions was experimentally studied in synthetic single crystals of NaCl and KCl using a hot-stage attachment to an optical microscope which was capable of imposing temperature gradients and axial compressive loads on the crystals. The migration velocities of the inclusions were found to be dependent on temperature, temperature gradient, and inclusion shape and size. The velocities were also dictated by the interfacial mass transfer resistance at brine/solid interface. This interfacial resistance depends on the dislocation density in the crystal, which in turn, depends on the axial compressive loading of the crystal. At low axial loads, the dependence between the velocity and temperature gradient is non-linear.At high axial loads, however, the interfacial resistance is reduced and the migration velocity depends linearly on the temperature gradient. All-liquid inclusions filled with mixed brines were also studied. For gas-liquid inclusions, three different gas phases (helium, air and argon) were compared. Migration studies were also conducted on single crystallites of natural salt as well as in polycrystalline natural salt samples. The behavior of the inclusions at large angle grain boundaries was observed. 35 figures, 3 tables.« less

Room-temperature annealing effects on the basal-plane resistivity of optimally doped YBa2Cu3O7-δ single crystals

NASA Astrophysics Data System (ADS)

Khadzhai, G. Ya.; Vovk, R. V.; Vovk, N. R.; Kamchatnaya, S. N.; Dobrovolskiy, O. V.

2018-02-01

We reveal that the temperature dependence of the basal-plane normal-state electrical resistance of optimally doped YBa2Cu3O7-δ single crystals can be with great accuracy approximated within the framework of the model of s-d electron-phonon scattering. This requires taking into account the fluctuation conductivity whose contribution exponentially increases with decreasing temperature and decreases with an increase of oxygen deficiency. Room-temperature annealing improves the sample and, thus, increases the superconducting transition temperature. The temperature of the 2D-3D crossover decreases during annealing.

Critical current densities of Jelly-Roll and powder metallurgy Nb{sub 3}Al wires as a function of temperature and magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thieme, C.L.H.; Kim, J.B.; Takayasu, M.

Critical current densities of multi-filamentary Nb{sub 3}Al wire made with the Jelly-Roll process (JR) and mono-core powder metallurgy process (PM) wire were measured as a function of temperature and magnetic field. The temperature dependence of the resistive critical field B{sub c2} was measured in PM wires. There is a significant difference between these resistive B{sub c2} values and the ones determined by Kramer plots. The field dependence of the critical current depends on the manufacturing method. In general, it follows a relationship that falls between pure Kramer and one where the pinning force is inversely proportional with B{sup 2}. Inmore » contrast with Nb{sub 3}Sn no maximum in the bulk pinning force is observed down to 3 T (0.15MxB{sub c2}).« less

Temperature dependent electrical properties of rare-earth metal Er Schottky contact on p-type InP

NASA Astrophysics Data System (ADS)

Rao, L. Dasaradha; Reddy, N. Ramesha; Kumar, A. Ashok; Reddy, V. Rajagopal

2013-06-01

The current-voltage (I-V) characteristics of the Er/p-InP Schottky barrier diodes (SBDs) have been investigated in the temperature range of 300-400K in steps of 25K. The electrical parameters such as ideality factor (n) and zero-bias barrier height (Φbo) are found to be strongly temperature dependent. It is observed that ΦI-V decreases whereas n increases with decreasing temperature. The series resistance is also calculated from the forward I-V characteristics of Er/p-InP SBD and it is found to be strongly dependent on temperature. Further, the temperature dependence of energy distribution of interface state density (NSS) profiles is determined from the forward I-V measurements by taking into account the bias dependence of the effective barrier height and ideality factor. It is observed that the NSS values increase with a decrease in temperature.

Development of microheaters for gas sensor with an AT-Mega 8535 temperature controller using a PWM (pulse width modulation) method

NASA Astrophysics Data System (ADS)

Megayanti, Meti; Panatarani, Camellia; Joni, I. Made

2016-03-01

Microheater is the main component in gas sensor characterized by their sensitivity, selectivity, and time response of gas sensor which is depend on the microheater temperature stability. A Cu microheater was developed and utilized AT-Mega 8535 controller using a PWM (pulse width modulation) method. This control system is interfaced to the PC to observe the real time temperature response of the microheater. Three initial resistance (R0) variations of microheater were developed in an open loop control system. The power characteristic of designed microheater depends on the specified microheater initial resistance. The smaller R0, the less power required to reach a temperature setting value. The developed microheater was designed to reach a temperature setting value of 250°C having resistance 0.531 Ω for 1.979 Watt and 0.265 Ω for 1.072 Watt respectively. The results of the investigation on the control performances shows microheater-control system achieved operating temperature up to 250°C. The response of the temperature control shows smallest R0 resulted in a high stability with short settling time, short delay time and small ripple for temperature setting values higher than 150°C. The obtained error of microheater temperature with R0 = 0.265 is 8.596 %. It is concluded that the developed microheater can be utilized as a component of a gas sensor.

Magnetic and electrical properties of several Mn-based amorphous alloys

NASA Astrophysics Data System (ADS)

Obi, Y.; Morita, H.; Fujimori, H.

1987-03-01

Magnetic and electrical properties of amorphous Mn-Y, Mn-Zr, and Mn-Nb alloys have been investigated. All these alloys have a temperature-dependent susceptibility which is well fitted by a Curie-Weiss law. This implies the existence of localized magnetic moments associated with the Mn atoms. In addition, amorphous Mn-Y alloys exhibit spin-glass characteristics at low temperature. The experimental results of the electrical resistivity show that the temperature coefficient of resistivity (TCR) of both Mn-Y and Mn-Zr are negative, while Mn-Nb has a positive TCR. On the other hand, the resistivity-temperature curves of Mn-Zr and Mn-Nb have nearly the same tendency but are different from that of Mn-Y.

Temperature dependence of thermal boundary resistances between multiwalled carbon nanotubes and some typical counterpart materials.

PubMed

Zhang, Guang; Liu, Changhong; Fan, Shoushan

2012-04-24

We directly measured the temperature dependence of thermal boundary resistances (TBRs) between multiwalled carbon nanotubes (MWCNTs) and different materials at elevated temperatures. Using the steady-state heat flow and the noncontacted measurement method, we could conveniently obtain the TBR-temperature relations. Our results indicate that the TBR-temperature relations vary distinctively with different contact materials when heating temperatures change from about 300 to 450 K; that is, the CNT-metal TBRs increase with increasing temperatures, whereas the CNT-insulator TBRs decrease. As a comparison, the TBRs between superaligned MWCNTs were measured and we found that the CNT-CNT TBRs remain basically unchanged as temperatures increase. We also found that the magnitude of TBRs between MWCNTs and different materials could differ from each other significantly. These results suggest that the choice of the right electrode may have an obvious influence on the thermal properties and other properties of the CNT-based devices. From another perspective, in view of some existing theoretical models about TBRs, our results support the validity of the molecular dynamics (MD) simulations in the calculation of CNT-solid TBRs at elevated temperatures.

Robust tunability of magnetoresistance in half-Heusler R PtBi ( R = Gd , Dy, Tm, and Lu) compounds

DOE PAGES

Mun, Eundeok; Bud'ko, Sergey L.; Canfield, Paul C.

2016-03-15

We present the magnetic field dependencies of transport properties for RPtBi ( R = Gd, Dy, Tm, and Lu) half-Heusler compounds. Temperature- and field-dependent resistivity measurements of high-quality RPtBi single crystals reveal an unusually large, nonsaturating magnetoresistance (MR) up to 300 K under a moderate magnetic field of H = 140 kOe. At 300 K, the large MR effect decreases as the rare earth is traversed from Gd to Lu and the magnetic field dependence of MR shows a deviation from the conventional H2 behavior. The Hall coefficient ( RH) for R = Gd indicates a sign change around 120more » K, whereas RH curves for R = Dy, Tm, and Lu remain positive for all measured temperatures. At 300 K, the Hall resistivity reveals a deviation from the linear field dependence for all compounds. Thermoelectric power measurements on this family show strong temperature and magnetic field dependencies which are consistent with resistivity measurements. A highly enhanced thermoelectric power under applied magnetic field is observed as high as ~100 μV/K at 140 kOe. Furthermore, analysis of the transport data in this series reveals that the rare-earth-based half-Heusler compounds provide opportunities to tune MR effect through lanthanide contraction and to elucidate the mechanism of nontrivial MR.« less

Temperature-dependent Wsm1 and Wsm2 gene-specific blockage of viral long-distance transport provides resistance to Wheat streak mosaic virus and Triticum mosaic virus in wheat

USDA-ARS?s Scientific Manuscript database

Wheat streak mosaic virus (WSMV) and Triticum mosaic virus (TriMV) are economically important viral pathogens of wheat. Wheat cultivars Mace with the resistance gene Wsm1 and Snowmass with the resistance gene Wsm2 are resistant to WSMV and TriMV, and WSMV, respectively. Viral resistance in both cult...

High pressure study of Pu(0.92)Am(0.08) binary alloy.

PubMed

Klosek, V; Griveau, J C; Faure, P; Genestier, C; Baclet, N; Wastin, F

2008-07-09

The phase transitions (by means of x-ray diffraction) and electrical resistivity of a Pu(0.92)Am(0.08) binary alloy were determined under pressure (up to 2 GPa). The evolution of atomic volume with pressure gives detailed information concerning the degree of localization of 5f electronic states and their delocalization process. A quasi-linear V = f(P) dependence reflects subtle modifications of the electronic structure when P increases. The electrical resistivity measurements reveal the very high stability of the δ phase for pressures less than 0.7 GPa, since no martensitic-like transformation occurs at low temperature. Remarkable electronic behaviours have also been observed. Finally, resistivity curves have shown the temperature dependence of the phase transformations together with unexpected kinetic effects.

High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films

NASA Astrophysics Data System (ADS)

Adnane, L.; Dirisaglik, F.; Cywar, A.; Cil, K.; Zhu, Y.; Lam, C.; Anwar, A. F. M.; Gokirmak, A.; Silva, H.

2017-09-01

High-temperature characterization of the thermoelectric properties of chalcogenide Ge2Sb2Te5 (GST) is critical for phase change memory devices, which utilize self-heating to quickly switch between amorphous and crystalline states and experience significant thermoelectric effects. In this work, the electrical resistivity and Seebeck coefficient are measured simultaneously as a function of temperature, from room temperature to 600 °C, on 50 nm and 200 nm GST thin films deposited on silicon dioxide. Multiple heating and cooling cycles with increasingly maximum temperature allow temperature-dependent characterization of the material at each crystalline state; this is in contrast to continuous measurements which return the combined effects of the temperature dependence and changes in the material. The results show p-type conduction (S > 0), linear S(T), and a positive Thomson coefficient (dS/dT) up to melting temperature. The results also reveal an interesting linearity between dS/dT and the conduction activation energy for mixed amorphous-fcc GST, which can be used to estimate one parameter from the other. A percolation model, together with effective medium theory, is adopted to correlate the conductivity of the material with average grain sizes obtained from XRD measurements. XRD diffraction measurements show plane-dependent thermal expansion for the cubic and hexagonal phases.

Local Magnetic Measurements of Trapped Flux Through a Permanent Current Path in Graphite

NASA Astrophysics Data System (ADS)

Stiller, Markus; Esquinazi, Pablo D.; Quiquia, José Barzola; Precker, Christian E.

2018-04-01

Temperature- and field-dependent measurements of the electrical resistance of different natural graphite samples suggest the existence of superconductivity at room temperature in some regions of the samples. To verify whether dissipationless electrical currents are responsible for the trapped magnetic flux inferred from electrical resistance measurements, we localized them using magnetic force microscopy on a natural graphite sample in remanent state after applying a magnetic field. The obtained evidence indicates that at room temperature a permanent current flows at the border of the trapped flux region. The current path vanishes at the same transition temperature T_c≈ 370 K as the one obtained from electrical resistance measurements on the same sample. This sudden decrease in the phase is different from what is expected for a ferromagnetic material. Time-dependent measurements of the signal show the typical behavior of flux creep of a permanent current flowing in a superconductor. The overall results support the existence of room-temperature superconductivity at certain regions in the graphite structure and indicate that magnetic force microscopy is suitable to localize them. Magnetic coupling is excluded as origin of the observed phase signal.

Subsurface Ice Detection via Low Frequency Surface Electromagnetic Method

NASA Astrophysics Data System (ADS)

Stillman, D. E.; Grimm, R. E.; Mcginnis, R. N.

2014-12-01

The geophysical detection of ice in the Cryosphere is typically conducted by measuring the absence of water. These interpretations can become non-unique in dry soils or in clay- and silt-rich soils that contain significant quantities of unfrozen water. Extensive laboratory measurements of electrical properties were made on permafrost samples as a function of frequency, temperature, and water content. These laboratory measurements show that the amount of ice can be uniquely obtained by measuring a frequency dependence of the electrical properties over a large frequency range (20 kHz - 10 Hz). In addition, the electrical properties of permafrost are temperature dependent, which can allow for an estimate of subsurface temperature. In order to test this approach in the field, we performed field surveys at four locations in Alaska. We used three low frequency electromagnetic methods: Spectral Induced Polarization (SIP: 20 kHz - 10 Hz), Capacively Coupled Resistivity (CCR: OhmMapper - 16.5 kHz), and DC Resistivity (Syscal ~ 8 Hz). At the Cold Regions Research and Engineering Laboratory permafrost tunnel near Fox, AK, we used SIP to measure the average ice concentration of 80 v% and determined the temperature to be -3±1°C by matching survey results to lab data. SIP data acquisition is very slow; therefore, at three sites near Tok, AK, we used CCR to perform reconnaissance of the area. Then SIP and DC resistivity were performed at anomalous areas. The three survey types give very similar absolute resistivity values. We found that while SIP gives the most quantitative results, the frequency dependence from the CCR and DC resistivity surveys is all that are needed to determine ice content in permafrost.

Electrical resistance of CNT-PEEK composites under compression at different temperatures

PubMed Central

2011-01-01

Electrically conductive polymers reinforced with carbon nanotubes (CNTs) have generated a great deal of scientific and industrial interest in the last few years. Advanced thermoplastic composites made of three different weight percentages (8%, 9%, and 10%) of multiwalled CNTs and polyether ether ketone (PEEK) were prepared by shear mixing process. The temperature- and pressure-dependent electrical resistance of these CNT-PEEK composites have been studied and presented in this paper. It has been found that electrical resistance decreases significantly with the application of heat and pressure. PMID:21711952

Scaling theory of magnetoresistance and carrier localization in Ga1-xMnxAs.

PubMed

Moca, C P; Sheu, B L; Samarth, N; Schiffer, P; Janko, B; Zarand, G

2009-04-03

We compare experimental resistivity data on Ga1-xMnxAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. The characteristic features of the temperature dependent resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. However, accounting for thermal fluctuations is crucial for a quantitative description of the magnetic field induced changes in resistance. While the noninteracting scaling theory is in reasonable agreement with the data, we find clear evidence for interaction effects at low temperatures.

Biomass-C specific temperature responses of microbial C transformations reveal consistency regardless of microbial community structure across diverse timescales of inquiry

NASA Astrophysics Data System (ADS)

Min, K.; Buckeridge, K. M.; Ziegler, S. E.; Edwards, K. A.; Bagchi, S.; Billings, S. A.

2016-12-01

The responses of heterotrophic microbial process rates to temperature in soils are often investigated in the short-term (hours to months), making it difficult to predict longer-term temperature responses. Here, we integrate the temperature sensitivity obtained from the Arrhenius model with the concepts of microbial resistance, resilience, and susceptibility to assess temporal dynamics of microbial temperature responses. We collected soils along a boreal forest climate gradient (long-term effect), and quantified exo-enzyme activities and CO2 respiration at 5, 15, and 25°C for 84 days (relatively short-term effect). Microbial process rates were examined at two levels (per g microbial biomass-C; and per g dry soil) along with community structure, to characterize driving mechanisms for temporal patterns (e.g., size of biomass, physiological plasticity, community composition). Although temperature sensitivity of exo-enzyme activities on a per g dry soil basis showed both resistance and resilience depending on the types of exo-enzyme, biomass -C-specific responses always exhibited resistance regardless of distinct community composition. Temperature sensitivity of CO2 respiration was constant across time and different communities at both units. This study advances our knowledge in two ways. First, resistant temperature sensitivity of exo-enzymes and respiration at biomass-C specific level across distinct communities and diverse timescales indicates a common relationship between microbial physiology and temperature at a fundamental level, a useful feature allowing microbial process models to be reasonably simplified. Second, different temporal responses of exo-enzymes depending on the unit selected provide a cautionary tale for those projecting future microbial behaviors, because interpretation of ecosystem process rates may vary with the unit of observation.

Hemispherical emissivity of V, Nb, Ta, Mo, and W from 300 to 1000 K

NASA Technical Reports Server (NTRS)

Cheng, S. X.; Hanssen, L. M.; Riffe, D. M.; Sievers, A. J.; Cebe, P.

1987-01-01

The hemispherical emissivities of five transition elements, V, Nb, Ta, Mo, and W, have been measured from 300 to 1000 K, complementing earlier higher-temperature results. These low-temperature data, which are similar, are fitted to a Drude model in which the room-temperature parameters have been obtained from optical measurements and the temperature dependence of the dc resistivity is used as input to calculate the temperature dependence of the emissivity. A frequency-dependent free-carrier relaxation rate is found to have a similar magnitude for all these elements. For temperatures larger than 1200 K the calculated emissivity is always greater than the measured value, indicating that the high-temperature interband features of transition elements are much weaker than those determined from room-temperature measurements.

Resistive oxygen sensor using ceria-zirconia sensor material and ceria-yttria temperature compensating material for lean-burn engine.

PubMed

Izu, Noriya; Nishizaki, Sayaka; Shin, Woosuck; Itoh, Toshio; Nishibori, Maiko; Matsubara, Ichiro

2009-01-01

Temperature compensating materials were investigated for a resistive oxygen sensor using Ce(0.9)Zr(0.1)O(2) as a sensor material for lean-burn engines. The temperature dependence of a temperature compensating material should be the same as the sensor material; therefore, the Y concentration in CeO(2)-Y(2)O(3) was optimized. The resistance of Ce(0.5)Y(0.5)O(2-δ) was independent of the air-to-fuel ratio (oxygen partial pressure), so that it was confirmed to function as a temperature compensating material. Sensor elements comprised of Ce(0.9)Zr(0.1)O(2) and Ce(0.5)Y(0.5)O(2-δ) were fabricated and the output was determined to be approximately independent of the temperature in the wide range from 773 to 1,073 K.

Zero temperature coefficient of resistance of the electrical-breakdown path in ultrathin hafnia

NASA Astrophysics Data System (ADS)

Zhang, H. Z.; Ang, D. S.

2017-09-01

The recent widespread attention on the use of the non-volatile resistance switching property of a microscopic oxide region after electrical breakdown for memory applications has prompted basic interest in the conduction properties of the breakdown region. Here, we report an interesting crossover from a negative to a positive temperature dependence of the resistance of a breakdown region in ultrathin hafnia as the applied voltage is increased. As a consequence, a near-zero temperature coefficient of resistance is obtained at the crossover voltage. The behavior may be modeled by (1) a tunneling-limited transport involving two farthest-spaced defects along the conduction path at low voltage and (2) a subsequent transition to a scattering-limited transport after the barrier is overcome by a larger applied voltage.

Heat capacity, resistivity, and angular dependent magnetization studies of single crystal Nd 1 + ϵ Fe 4 B 4 for ϵ ≈ 1 7

DOE Office of Scientific and Technical Information (OSTI.GOV)

Conner, Benjamin S.; Susner, Michael A.; UES Inc., Beavercreek, OH

Advances in crystal growth have allowed for synthesis of large single crystals of Nd 1+ϵFe 4B 4, a well-known phase with a modulated structure. As a result we are able to report heat capacity and resistivity measurements on a single crystal Nd 1+ϵFe 4B 4 sample with a distribution of ϵ that skews towards the solubility limit of Nd near ϵ ≈ 17. Heat capacity measurements show evidence of crystal field splitting at temperatures higher than the long-range ferromagnetic Curie temperature. Heat capacity, resistivity, and magnetization measurements all confirm a Curie temperature of 7 K which is lower than previouslymore » reported values in the Nd 1+ϵFe 4B 4 system. Here, we also perform measurements of the angular dependence of the magnetization and discover behavior associated with the magnetic anisotropy that is inconsistent with the simple description previously proposed.« less

Heat capacity, resistivity, and angular dependent magnetization studies of single crystal Nd 1 + ϵ Fe 4 B 4 for ϵ ≈ 1 7

DOE PAGES

Conner, Benjamin S.; Susner, Michael A.; UES Inc., Beavercreek, OH; ...

2017-04-04

Advances in crystal growth have allowed for synthesis of large single crystals of Nd 1+ϵFe 4B 4, a well-known phase with a modulated structure. As a result we are able to report heat capacity and resistivity measurements on a single crystal Nd 1+ϵFe 4B 4 sample with a distribution of ϵ that skews towards the solubility limit of Nd near ϵ ≈ 17. Heat capacity measurements show evidence of crystal field splitting at temperatures higher than the long-range ferromagnetic Curie temperature. Heat capacity, resistivity, and magnetization measurements all confirm a Curie temperature of 7 K which is lower than previouslymore » reported values in the Nd 1+ϵFe 4B 4 system. Here, we also perform measurements of the angular dependence of the magnetization and discover behavior associated with the magnetic anisotropy that is inconsistent with the simple description previously proposed.« less

Far-infrared and dc magnetotransport of CaMnO3-CaRuO3 superlattices

NASA Astrophysics Data System (ADS)

Yordanov, P.; Boris, A. V.; Freeland, J. W.; Kavich, J. J.; Chakhalian, J.; Lee, H. N.; Keimer, B.

2011-07-01

We report temperature- and magnetic-field-dependent measurements of the dc resistivity and the far-infrared reflectivity (FIR) (photon energies ℏω=50-700 cm-1) of superlattices comprising ten consecutive unit cells of the antiferromagnetic insulator CaMnO3, and four to ten unit cells of the correlated paramagnetic metal CaRuO3. Below the Néel temperature of CaMnO3, the dc resistivity exhibits a logarithmic divergence upon cooling, which is associated with a large negative, isotropic magnetoresistance. The ω→0 extrapolation of the resistivity extracted from the FIR reflectivity, on the other hand, shows a much weaker temperature and field dependence. We attribute this behavior to scattering of itinerant charge carriers in CaRuO3 from sparse, spatially isolated magnetic defects at the CaMnO3-CaRuO3 interfaces. This field-tunable “transport bottleneck” effect may prove useful for functional metal-oxide devices.

An unusual metallic behavior in a Ag4SSe single crystal

NASA Astrophysics Data System (ADS)

Matteppanavar, Shidaling; Bui, Nguyen Hai An; van Smaalen, Sander; Thamizhavel, A.; Ramakrishnan, S.

2018-04-01

We report the magnetic susceptibility, resistivity and heat capacity measurements on high quality single crystalline tetra silver sulphoselenide (Ag4SSe). The magnetic susceptibility and resistivity measurements show anomalies around 260 K. The large diamagnetic drop with hysteresis at the transition implies a first order transition. Such a diamagnetic drop cannot be ascribed to the formation of charge density wave (CDW) since the temperature dependence of the resistivity shows no upturn at this transition. Infact the resistivity is decreasing with decreasing temperature, indicating a metallic behavior. However, unlike normal metals, the resistivity is almost temperature independent in the temperature range from 4-180 K. Usually, when one observes a diamagnetic transition, it is assumed to be due to a drop in the density of states at the Fermi level which leads to the decrease in the Pauli paramagnetic susceptibility. Such a decrease in the density of states often results in an increase in resistivity unless mobility of the charge carriers changes significantly. Hence, we believe that in Ag4SSe, the structural transition causes an unusual Fermi surface reconstruction which in turn leads to a strange metallic behavior at low temperatures.

Electrical Characterization of Temperature Dependent Resistive Switching in Pr0.7C0.3MnO3

NASA Astrophysics Data System (ADS)

Lopez, Melinda; Salvo, Christopher; Tsui, Stephen

2012-02-01

Resistive switching offers a non-volatile and reversible means to possibly create a more physically compact yet larger access capacity in memory technology. While there has been a great deal of research conducted on this electrical property in oxide materials, there is still more to be learned about this at both high voltage pulsing and cryogenic temperatures. In this work, the electrical properties of a PCMO-metal interface switch were examined after application of voltage pulsing varying from 100 V to 1000 V and at temperatures starting at 293 K and lowered to 80 K. What was discovered was that below temperatures of 150 K, the resistive switching began to decrease across all voltage pulsing and that at all temperatures before this cessation, the change in resistive switching increased with higher voltage pulsing. We suggest that a variable density of charge traps at the interface is a likely mechanism, and work continues to extract more details.

Biased four-point probe resistance

NASA Astrophysics Data System (ADS)

Garcia-Vazquez, Valentin

2017-11-01

The implications of switching the current polarity in a four-point probe resistance measurement are presented. We demonstrate that, during the inversion of the applied current, any change in the voltage V produced by a continuous drop of the sample temperature T will induce a bias in the temperature-dependent DC resistance. The analytical expression for the bias is deduced and written in terms of the variations of the measured voltages with respect to T and by the variations of T with respect to time t. Experimental data measured on a superconducting Nb thin film confirm that the bias of the normal-state resistance monotonically increases with the cooling rate dT/dt while keeping fixed dV/dT; on the other hand, the bias increases with dV/dT, reaching values up to 13% with respect to the unbiased resistance obtained at room temperature.

Optical study of phase transitions in single-crystalline RuP

NASA Astrophysics Data System (ADS)

Chen, R. Y.; Shi, Y. G.; Zheng, P.; Wang, L.; Dong, T.; Wang, N. L.

2015-03-01

RuP single crystals of MnP-type orthorhombic structure were synthesized by the Sn flux method. Temperature-dependent x-ray diffraction measurements reveal that the compound experiences two structural phase transitions, which are further confirmed by enormous anomalies shown in temperature-dependent resistivity and magnetic susceptibility. Particularly, the resistivity drops monotonically upon temperature cooling below the second transition, indicating that the material shows metallic behavior, in sharp contrast with the insulating ground state of polycrystalline samples. Optical conductivity measurements were also performed in order to unravel the mechanism of these two transitions. The measurement revealed a sudden reconstruction of band structure over a broad energy scale and a significant removal of conducting carriers below the first phase transition, while a charge-density-wave-like energy gap opens below the second phase transition.

Resistance noise in epitaxial thin films of ferromagnetic topological insulators

NASA Astrophysics Data System (ADS)

Bhattacharyya, Semonti; Kandala, Abhinav; Richardella, Anthony; Islam, Saurav; Samarth, Nitin; Ghosh, Arindam

2016-02-01

We report detailed temperature and gate-voltage dependence of 1/f resistance noise in magnetically doped topological insulators (TI) Crx(Bi,Sb)2-xTe3. The noise is remarkably sensitive to the gate voltage, increasing rapidly as the chemical potential is moved towards the charge neutrality point. Unlike in identically prepared (Bi,Sb)2Te3 films, where mobility-fluctuations in the surface states is the dominant mechanism, the noise in the magnetic Crx(Bi,Sb)2-xTe3 originates from transport in the localized band tail of the bulk valence band. A strong increase in noise with decreasing temperature supports this scenario. At higher temperature (≥10 K), we observed large noise peaks at gate voltage-dependent characteristic temperature scales. In line with similar observations in other non-magnetic TI systems, we attribute these peaks to generation-recombination in the Cr-impurity band.

Steady-state and second-sound measurements of Kapitza resistance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katerberg, James Alan

1980-01-01

Published steady-state (dc) and second-sound (ac) measurements of the Kapitza resistance (R K) have differed in reports of the temperature dependence of R K. The two types of measurements were also seen to conflict on the measured effects of sample damage on the magnitude of R K. To resolve these differences, measurements of R K have been made using both techniques on the same sample, during the same experimental run. Our measurements, made on copper-liquid helium interfaces from 1.1 to 2.1 K, show excellent agreement between the dc and ac results. No evidence is seen for a frequency-dependent Kapitza resistance.more » Our measurements show an increase in R K when the sample is damaged, agreeing with published ac measurements, but disagreeing with published dc measurements. The temperature dependence of R K in our measurements is approximately T -3 from 1.5 to 2.1 K, in agreement with published dc measurements. A T -4 dependence has been seen in the published ac experiments. In our experiments, a T -4 dependence is observed only when second sound is coupled from the generating cavity to the helium bath.« less

Pressure induced change in the electronic state of Ta 4 Pd 3 Te 16

DOE PAGES

Jo, Na Hyun; Xiang, Li; Kaluarachchi, Udhara S.; ...

2017-04-24

Here, we present measurements of superconducting transition temperature, resistivity, magnetoresistivity, and temperature dependence of the upper critical field of Ta 4 Pd 3 Te 16 under pressures up to 16.4 kbar. All measured properties have an anomaly at ~ 2 $-$ 4 kbar pressure range; in particular there is a maximum in T c and upper critical field, H c2 ( 0 ), and minimum in low temperature, normal state resistivity. Qualitatively, the data can be explained considering the density of state at the Fermi level as a dominant parameter.

Development of microheaters for gas sensor with an AT-Mega 8535 temperature controller using a PWM (pulse width modulation) method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Megayanti, Meti; Panatarani, Camellia; Joni, I. Made, E-mail: imadejoni@phys.unpad.ac.id

Microheater is the main component in gas sensor characterized by their sensitivity, selectivity, and time response of gas sensor which is depend on the microheater temperature stability. A Cu microheater was developed and utilized AT-Mega 8535 controller using a PWM (pulse width modulation) method. This control system is interfaced to the PC to observe the real time temperature response of the microheater. Three initial resistance (R0) variations of microheater were developed in an open loop control system. The power characteristic of designed microheater depends on the specified microheater initial resistance. The smaller R0, the less power required to reach amore » temperature setting value. The developed microheater was designed to reach a temperature setting value of 250°C having resistance 0.531 Ω for 1.979 Watt and 0.265 Ω for 1.072 Watt respectively. The results of the investigation on the control performances shows microheater-control system achieved operating temperature up to 250°C. The response of the temperature control shows smallest R0 resulted in a high stability with short settling time, short delay time and small ripple for temperature setting values higher than 150°C. The obtained error of microheater temperature with R0 = 0.265 is 8.596 %. It is concluded that the developed microheater can be utilized as a component of a gas sensor.« less

Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

PubMed

Hu, Wei; Zou, Lilan; Chen, Xinman; Qin, Ni; Li, Shuwei; Bao, Dinghua

2014-04-09

We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.

Theoretical investigation on the magnetic and electric properties in TbSb compound through an anisotropic microscopic model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ranke, P. J. von, E-mail: von.ranke@uol.com.br; Ribeiro, P. O.; Alho, B. P.

2016-05-14

We report the strong correlations between the magnetoresistivity and the magnetic entropy change in the cubic antiferromagnetic TbSb compound. The theoretical investigation was performed through a microscopic model which takes into account the crystalline electrical field anisotropy, exchange coupling interactions between the up and down magnetic sublattices, and the Zeeman interaction. The easy magnetization directions changes from 〈001〉 to 〈110〉 and then to 〈111〉 observed experimentally was successfully theoretically described. Also, the calculation of the temperature dependence of electric resistivity showed good agreement with the experimental data. Theoretical predictions were calculated for the temperature dependence of the magnetic entropy andmore » resistivity changes upon magnetic field variation. Besides, the difference in the spin up and down sublattices resistivity was investigated.« less

Method and apparatus for measuring properties of particle beams using thermo-resistive material properties

DOEpatents

Degtiarenko, Pavel V.; Dotson, Danny Wayne

2007-10-09

A beam position detector for measuring the properties of a charged particle beam, including the beam's position, size, shape, and intensity. One or more absorbers are constructed of thermo-resistive material and positioned to intercept and absorb a portion of the incoming beam power, thereby causing local heating of each absorber. The local temperature increase distribution across the absorber, or the distribution between different absorbers, will depend on the intensity, size, and position of the beam. The absorbers are constructed of a material having a strong dependence of electrical resistivity on temperature. The beam position detector has no moving parts in the vicinity of the beam and is especially suited to beam areas having high ionizing radiation dose rates or poor beam quality, including beams dispersed in the transverse direction and in their time radio frequency structure.

Generalized Procedure for Improved Accuracy of Thermal Contact Resistance Measurements for Materials With Arbitrary Temperature-Dependent Thermal Conductivity

DOE PAGES

Sayer, Robert A.

2014-06-26

Thermal contact resistance (TCR) is most commonly measured using one-dimensional steady-state calorimetric techniques. In the experimental methods we utilized, a temperature gradient is applied across two contacting beams and the temperature drop at the interface is inferred from the temperature profiles of the rods that are measured at discrete points. During data analysis, thermal conductivity of the beams is typically taken to be an average value over the temperature range imposed during the experiment. Our generalized theory is presented and accounts for temperature-dependent changes in thermal conductivity. The procedure presented enables accurate measurement of TCR for contacting materials whose thermalmore » conductivity is any arbitrary function of temperature. For example, it is shown that the standard technique yields TCR values that are about 15% below the actual value for two specific examples of copper and silicon contacts. Conversely, the generalized technique predicts TCR values that are within 1% of the actual value. The method is exact when thermal conductivity is known exactly and no other errors are introduced to the system.« less

Transformation temperatures of martensite in beta phase nickel aluminide

NASA Technical Reports Server (NTRS)

Smialek, J. L.; Hehemann, R. F.

1972-01-01

Resistivity and thermal arrest measurements determined that the compositional dependence of Ms (martensite state) temperatures for NiAl martensite was linear between 60 and 69 atomic percent nickel, with Ms = 124 Ni - 7410 K. Resistivity and surface relief experiments indicated the presence of thermoelastic martensite for selected alloys. Some aspects of the transformation were studied by hot stage microscopy and related to the behavior observed for alloys exhibiting the shape-memory effect.

Transformation temperatures of martensite in beta-phase nickel aluminide.

NASA Technical Reports Server (NTRS)

Smialek, J. L.; Hehemann, R. F.

1973-01-01

Resistivity and thermal arrest measurements determined that the compositional dependence of M sub s temperatures for NiAl martensite was linear between 60 and 69 at. % Ni, with M sub s = (124 Ni - 7410)K. Resistivity and surface relief experiments for selected alloys indicated the presence of thermoelastic martensite. Some aspects of the transformation were studied by hot-stage microscopy and related to the behavior observed for alloys exhibiting the shape-memory effect.

A revisit to the temperature dependence of electrical resistivity of α - Titanium at low temperatures

NASA Astrophysics Data System (ADS)

Sharath Chandra, L. S.; Mondal, R.; Thamizhavel, A.; Dhar, S. K.; Roy, S. B.

2017-09-01

The temperature dependence of resistivity ρ(T) of a polycrystalline sample and a single crystal sample (current along the [0001] direction) of α - Titanium (Ti) at low temperatures is revisited to understand the electrical charge transport phenomena in this hexagonal closed pack metal. We show that the ρ(T) in single crystal Ti can be explained by considering the scattering of electrons due to electron-phonon, electron-electron, inter-band s-d and electron-impurity interactions, whereas the ρ(T) of polycrystalline Ti could not be explained by these interactions alone. We observed that the effects of the anisotropy of the hexagonal structure on the electronic band structure and the phonon dispersion need to be taken into account to explain ρ(T) of polycrystalline Ti. Two Debye temperatures corresponding to two different directions for the electron-phonon interactions and inter-band s-d scattering are needed to account the observed ρ(T) in polycrystalline Ti.

Extended investigation of intermartensitic transitions in Ni-Mn-Ga magnetic shape memory alloys: A detailed phase diagram determination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Çakir, Asli; Aktürk, Selçuk; Righi, Lara

2013-11-14

Martensitic transitions in shape memory Ni-Mn-Ga Heusler alloys take place between a high temperature austenite and a low temperature martensite phase. However, intermartensitic transformations have also been encountered that occur from one martensite phase to another. To examine intermartensitic transitions in magnetic shape memory alloys in detail, we carried out temperature dependent magnetization, resistivity, and x-ray diffraction measurements to investigate the intermartensitic transition in Ni{sub 50}Mn{sub 50–x}Ga{sub x} in the composition range 12≤x≤25 at. %. Rietveld refined x-ray diffraction results are found to be consistent with magnetization and resistivity data. Depending on composition, we observe that intermartensitic transitions occur inmore » the sequences 7M→L1{sub 0}, 5M→7M, and 5M→7M→L1{sub 0} with decreasing temperature. The L1{sub 0} non-modulated structure is most stable at low temperature.« less

Transport properties of Y1-xNdxCo2 compounds

NASA Astrophysics Data System (ADS)

Uchima, K.; Takeda, M.; Zukeran, C.; Nakamura, A.; Arakaki, N.; Komesu, S.; Takaesu, Y.; Hedo, M.; Nakama, T.; Yagasaki, K.; Uwatoko, Y.; Burkov, A. T.

2012-12-01

Electrical resistivity ρ and thermopower S of light rare earth-based pseudo-binary Y1-xNdxCo2 alloys have been measured at temperatures from 2 K to 300 K and under pressures up to 3.5 GPa. The Curie temperature of the alloys, TC, determined from characteristic features in the temperature dependences of the transport properties, decreases with decreasing Nd concentration x and vanishes around xc = 0.3. The residual resistivity has a pronounced maximum at x = xc. The temperature coefficient of thermopower dS/dT at low temperature limit shows a complex dependence on alloy composition: it changes its sign from negative to positive at x ≍ 0.2, having a maximum at x = xc, and is nearly composition independent at x > 0.5. The pressure dependences of TC and ρ0 of Yo.6Ndo.4Co2 reveal the behavior similar to that observed in the Y1-xRxHCo2 (RH = heavy rare earth) alloy systems, which implies that the magnetic state of the Co-3d electron subsystem is responsible for the transport properties in the Y1-xNdxCo2 alloys.

Effects of oxidation and roughness on Cu contact resistance from 4 to 290 K

NASA Technical Reports Server (NTRS)

Nilles, M. J.; Van Sciver, S. W.

1988-01-01

Knowledge of the factors influencing contact resistance is important for optimizing system design in cryogenic applications. In space cryogenics, indirect cooling of infrared components is the primary concern. The presence of bolted joints results in contact resistances which can dominate all other contributions to the overall heat transfer rate. Here, thermal and electrical contact resistances measured between 4 K and 290 K for a series of bolted OFHC Cu contacts are reported. Surface roughness is found to have little effect on the overall contact resistance within the experimental limits, while oxidation can increase the contact resistance by as much as a factor of 100. Thermal and electrical contact resistances measured on the same contact show that the contact resistance temperature dependence does not follow the bulk dependence. For example, the residual resistance ratio (RRR) of the OFHC Cu is 110, but for contacts made from this material, the RRR is about two.

Effect of Silver Doping on Transport Properties of Bi2Se3: AgxBi2Se3 and Bi2-xAgxSe3

NASA Astrophysics Data System (ADS)

Zhang, Min; Wei, Zhan-Tao

2018-05-01

Ag-doped Bi2Se3 with the formula AgxBi2Se3 and Bi2-xAgxSe3 were prepared and their electrical and magnetic transport properties have been investigated to study the influence of silver doping on transport properties of Bi2Se3 with different Ag-doped method. All samples exhibited metallic resistivity and the resistivity increased with increasing Ag concentration. The lattice parameter c of Ag-substituted and Ag-intercalated samples displays a contrary change as the Ag concentration increased. For the Ag-intercalated samples, both the resistance upturn were observed in the curves of temperature dependent of resistivity and temperature dependent of magnetoresistance, respectively, indicating that the enhanced surface effect was obtained in those samples. Monotonously, field-induced MR peaks around 200 K were also observed in those samples. Similar behaviors were not observed in the Ag-substituted samples.

Sensitive photo-thermal response of graphene oxide for mid-infrared detection

NASA Astrophysics Data System (ADS)

Bae, Jung Jun; Yoon, Jung Hyun; Jeong, Sooyeon; Moon, Byoung Hee; Han, Joong Tark; Jeong, Hee Jin; Lee, Geon-Woong; Hwang, Ha Ryong; Lee, Young Hee; Jeong, Seung Yol; Lim, Seong Chu

2015-09-01

This study characterizes the effects of incident infrared (IR) radiation on the electrical conductivity of graphene oxide (GO) and examines its potential for mid-IR detection. Analysis of the mildly reduced GO (m-GO) transport mechanism near room temperature reveals variable range hopping (VRH) for the conduction of electrons. This VRH behavior causes the m-GO resistance to exhibit a strong temperature dependence, with a large negative temperature coefficient of resistance of approximately -2 to -4% K-1. In addition to this hopping transport, the presence of various oxygen-related functional groups within GO enhances the absorption of IR radiation significantly. These two GO material properties are synergically coupled and provoke a remarkable photothermal effect within this material; specifically, a large resistance drop is exhibited by m-GO in response to the increase in temperature caused by the IR absorption. The m-GO bolometer effect identified in this study is different from that exhibited in vanadium oxides, which require added gold-black films that function as IR absorbers owing to their limited IR absorption capability.This study characterizes the effects of incident infrared (IR) radiation on the electrical conductivity of graphene oxide (GO) and examines its potential for mid-IR detection. Analysis of the mildly reduced GO (m-GO) transport mechanism near room temperature reveals variable range hopping (VRH) for the conduction of electrons. This VRH behavior causes the m-GO resistance to exhibit a strong temperature dependence, with a large negative temperature coefficient of resistance of approximately -2 to -4% K-1. In addition to this hopping transport, the presence of various oxygen-related functional groups within GO enhances the absorption of IR radiation significantly. These two GO material properties are synergically coupled and provoke a remarkable photothermal effect within this material; specifically, a large resistance drop is exhibited by m-GO in response to the increase in temperature caused by the IR absorption. The m-GO bolometer effect identified in this study is different from that exhibited in vanadium oxides, which require added gold-black films that function as IR absorbers owing to their limited IR absorption capability. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr04039f

Electro-thermal analysis of contact resistance

NASA Astrophysics Data System (ADS)

Pandey, Nitin; Jain, Ishant; Reddy, Sudhakar; Gulhane, Nitin P.

2018-05-01

Electro-Mechanical characterization over copper samples are performed at the macroscopic level to understand the dependence of electrical contact resistance and temperature on surface roughness and contact pressure. For two different surface roughness levels of samples, six levels of load are selected and varied to capture the bulk temperature rise and electrical contact resistance. Accordingly, the copper samples are modelled and analysed using COMSOLTM as a simulation package and the results are validated by the experiments. The interface temperature during simulation is obtained using Mikic-Elastic correlation and by directly entering experimental contact resistance value. The load values are varied and then reversed in a similar fashion to capture the hysteresis losses. The governing equations & assumptions underlying these models and their significance are examined & possible justification for the observed variations are discussed. Equivalent Greenwood model is also predicted by mapping the results of the experiment.

Tunable resistivity due to kinetic arrest of antiferro-ferromagnetic transition in FeRh0.46Pd0.54

NASA Astrophysics Data System (ADS)

Saha, Pampi; Rawat, R.

2018-05-01

We show a large negative magnetoresistance (MR) of ≈10% near room temperature in FeRh0.46Pd0.54, which increases to more than 60% at low temperatures. The magnitude of resistivity and, hence, MR depend on the history of the sample in HT (magnetic field-temperature) space, e.g., resistivity at 5 K changes by more than 70% with thermal cycling. These results are explained due to slow kinetics of the transformation from austenite antiferromagnetic (AF) to martensite ferromagnetic (FM) state with the decrease in temperature. As a result, AF to FM transformation remains incomplete on experimental time scales and non-ergodic AF phase co-exists with a low temperature equilibrium FM phase. In the present system, the kinetics of the transition is shown to dominate up to 150 K, which is significantly high in comparison to other kinetically arrested systems.

Differential effects of sporulation temperature on the high pressure resistance of Clostridium botulinum type E spores and the interconnection with sporulation medium cation contents.

PubMed

Lenz, Christian A; Vogel, Rudi F

2015-04-01

High pressure thermal (HPT) processing can be used to improve traditional preservation methods and increase food safety and durability, whereas quality related characteristics can be largely maintained. Clostridium (C.) botulinum type E is a non-proteolytic, psychrotrophic, toxin-producing spore former, commonly associated with aquatic environments in temperate regions of the northern hemisphere. Sporulation in nature is likely to occur under varying conditions including temperature and nutrient availability, which might affect resistance properties of resulting spores. In our study, we determined the effect of sporulation temperature (13-38 °C) on the resistance of three Clostridium botulinum type E strains to differently intense HPT treatments (200 MPa at 40 and 80 °C, and 800 MPa at 40 and 80 °C). Furthermore, the effect of cations on sporulation temperature-mediated alterations in HHP resistance was investigated. Results indicate that low and high sporulation temperatures can increase and decrease sporal HPT resistance, respectively, in a treatment-dependent (pressure level, treatment temperature) manner, whereas the trends observed are largely unaffected by pressure dwells (1 s-10 min). Furthermore, results show that the cation content of the sporulation medium (Ca(2+), Mg(2+), Mn(2+)) marginally influences and partially counteracts effects on the HPT resistance of spores grown at low and elevated temperatures, respectively. This suggests that sporulation temperature and medium cations provoke changes in some common spore resistance structures. Sporulation conditions can markedly affect spore resistance properties and, thus, should be considered for the experimental setup of worst case studies aiming to evaluate the effectiveness of food processes in terms of the inactivation of C. botulinum type E spores. Copyright © 2014 Elsevier Ltd. All rights reserved.

MEASUREMENT OF RF LOSSES DUE TO TRAPPED FLUX IN A LARGE-GRAIN NIOBIUM CAVITY

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gianluigi Ciovati; Alex Gurevich

Trapped magnetic field in superconducting niobium is a well known cause of radio-frequency (RF) residual losses. In this contribution, we present the results of RF tests on a single-cell cavity made of high-purity large grain niobium before and after allowing a fraction of the Earth’s magnetic field to be trapped in the cavity during the cooldown below the critical temperature Tc. This experiment has been done on the cavity before and after a low temperature baking. Temperature mapping allowed us to determine the location of hot-spots with high losses and to measure their field dependence. The results show not onlymore » an increase of the low-field residual resistance, but also a larger increase of the surface resistance for intermediate RF field (higher "medium field Qslope"), which depends on the amount of the trapped flux. These additional field-dependent losses can be described as losses of pinned vortices oscillating under the applied RF magnetic field.« less

Metallic conductivity and air stability in copper chloride intercalated carbon fibers

NASA Astrophysics Data System (ADS)

Oshima, H.; Woollam, J. A.; Yavrouian, A.

1982-12-01

Carbon-copper chloride intercalation compounds have been obtained by using variously graphitized carbon fibers as host materials. The resultant conductors are air stable, thermally stable to 450 K, have electrical resistivities as low as 12.9 microohm cm at room temperature, and have metallic conductivity temperature dependencies. These intercalated fibers have tensile strengths of 160000 psi, and Young's moduli of 25 x 10 to the 6th psi. For aerospace use, 1/(resistivity x density) is a figure of merit. On this basis, a reduction in resistivity by a factor of two will make this conductor competitive with copper.

Electrical and thermal behavior of unsaturated soils: experimental results

NASA Astrophysics Data System (ADS)

Nouveau, Marie; Grandjean, Gilles; Leroy, Philippe; Philippe, Mickael; Hedri, Estelle; Boukcim, Hassan

2016-05-01

When soil is affected by a heat source, some of its properties are modified, and in particular, the electrical resistivity due to changes in water content. As a result, these changes affect the thermal properties of soil, i.e., its thermal conductivity and diffusivity. We experimentally examine the changes in electrical resistivity and thermal conductivity for four soils with different grain size distributions and clay content over a wide range of temperatures, from 20 to 100 °C. This temperature range corresponds to the thermal conditions in the vicinity of a buried high voltage cable or a geothermal system. Experiments were conducted at the field scale, at a geothermal test facility, and in the laboratory using geophysical devices and probing systems. The results show that the electrical resistivity decreases and the thermal conductivity increases with temperature up to a critical temperature depending on soil types. At this critical temperature, the air volume in the pore space increases with temperature, and the resulting electrical resistivity also increases. For higher temperatures , the thermal conductivity increases sharply with temperature up to a second temperature limit. Beyond it, the thermal conductivity drops drastically. This limit corresponds to the temperature at which most of the water evaporates from the soil pore space. Once the evaporation is completed, the thermal conductivity stabilizes. To explain these experimental results, we modeled the electrical resistivity variations with temperature and water content in the temperature range 20 - 100°C, showing that two critical temperatures influence the main processes occurring during heating at temperatures below 100 °C.

Superconductivity in BiPbCaSrCuO thin films

NASA Astrophysics Data System (ADS)

Fu, S. M.; Yang, H. C.; Chen, F. C.; Horng, H. E.; Jao, J. C.

1989-12-01

Thin films of BiPbCaSrCuO sample were prepared by RF sputtering from sintered ceramic targets. Single crystal of MgO(100) was selected as substrate. The sputtering was held at room temperature. Different annealing conditions were carried out to obtain optimum conditions. High temperature resistivity was measured in air to study the thermodynamic reaction of the sintered films. An resistivity anomaly was found in the first heating cycle which suggests a thermodynamic reaction. A temperature dependence of I c was measured to study the coupling of grains in the granular films in different temperature ranges and the results will be discussed.

Impact of interfacial resistance switching on thermoelectric effect of Nb-doped SrTiO3 single crystalline

NASA Astrophysics Data System (ADS)

Zhang, Peijian; Meng, Yang; Liu, Ziyu; Li, Dong; Su, Tao; Meng, Qingyu; Mao, Qi; Pan, Xinyu; Chen, Dongmin; Zhao, Hongwu

2012-03-01

The thermoelectric properties of the bistable resistance states in Nb doped SrTiO3 single crystal have been investigated. The Seebeck coefficients for both low and high resistance states change linearly with temperature. The three-terminals contrast measurement demonstrates that a large fraction of the voltage drop is applied at the tiny volume near the bottom interface between the electrode and the oxide bulk. Therefore, the metallic oxide bulk plays a dominant role in the temperature dependence of Seebeck coefficients. The thermoelectric properties of new resistance switching (RS) devices with minimized non-RS volume could be exploited for the RS mechanism and novel applications.

Temperature dependent electrical characteristics of Zn/ZnSe/n-GaAs/In structure

NASA Astrophysics Data System (ADS)

Sağlam, M.; Güzeldir, B.

2016-04-01

We have reported a study of the I-V characteristics of Zn/ZnSe/n-GaAs/In sandwich structure in a wide temperature range of 80-300 K by a step of 20 K, which are prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The main electrical parameters, such as ideality factor and zero-bias barrier height determined from the forward bias I-V characteristics were found strongly depend on temperature and when the increased, the n decreased with increasing temperature. The ideality factor and barrier height values as a function of the sample temperature have been attributed to the presence of the lateral inhomogeneities of the barrier height. Furthermore, the series resistance have been calculated from the I-V measurements as a function of temperature dependent.

Fabrication of Josephson Junction without shadow evaporation

NASA Astrophysics Data System (ADS)

Wu, Xian; Ku, Hsiangsheng; Long, Junling; Pappas, David

We developed a new method of fabricating Josephson Junction (Al/AlOX/Al) without shadow evaporation. Statistics from room temperature junction resistance and measurement of qubits are presented. Unlike the traditional ``Dolan Bridge'' technique, this method requires two individual lithographies and straight evaporations of Al. Argon RF plasma is used to remove native AlOX after the first evaporation, followed by oxidation and second Al evaporation. Junction resistance measured at room temperature shows linear dependence on Pox (oxidation pressure), √{tox} (oxidation time), and inverse proportional to junction area. We have seen 100% yield of qubits made with this method. This method is promising because it eliminates angle dependence during Junction fabrication, facilitates large scale qubits fabrication.

Temperature Dependent Magnetoresistance of CeCu2Si2 up to 60 T [Proposal: P14728

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stritzinger, Laurel Elaine Winter; Lai, Y.; Mcdonald, Ross David

2017-03-23

We recently investigated the chemical substitution series CeCu2Si2-xPx, for x = 0, 0.01, and 0.14, using a contactless tunnel diode oscillator technique. These measurements revealed previously unreported Shubnikov-de Haas oscillations above 45 T with an unusual temperature dependence that could potentially be explained by a high magnetic field transition. To investigate this possible transition, magnetoresistance measurements were desired. However, initial magnetoresistance measurements on CeCu2Si2 showed poor signal-to-noise due to the small value of the sample's resistivity. To overcome this obstacle, we performed micro-structuring of a single crystal specimen to increase the sample's resistance.

Carrier Transport of Silver Nanowire Contact to p-GaN and its Influence on Leakage Current of LEDs

NASA Astrophysics Data System (ADS)

Oh, Munsik; Kang, Jae-Wook; Kim, Hyunsoo

2018-03-01

The authors investigated the silver nanowires (AgNWs) contact formed on p-GaN. Transmission line model applied to the AgNWs contact to p-GaN produced near ohmic contact with a specific contact resistance (ρ sc) of 10-1˜10-4 Ω·cm2. Noticeably, the contact resistance had a strong bias-voltage (or current-density) dependence associated with a local joule heating effect. Current-voltage-temperature (I-V-T) measurement revealed a strong temperature dependence with respect to ρ sc, indicating that the temperature played a key role of an enhanced carrier transport. The local joule heating at AgNW/GaN interface, however, resulted in a generation of leakage current of light-emitting diodes (LEDs) caused by degradation of AgNW contact.

Magnet/cryocooler integration for thermal stability in conduction-cooled systems

NASA Astrophysics Data System (ADS)

Chang, H.-M.; Kwon, K. B.

2002-05-01

The stability conditions that take into accounts the size of superconducting magnets and the refrigeration capacity of cryocoolers are investigated for the conduction-cooled systems without liquid cryogens. The worst scenario in the superconducting systems is that the heat generation in the resistive state exceeds the refrigeration, causing a rise in the temperature of the magnet winding and leading to burnout. It is shown by an analytical solution that in the continuously resistive state, the temperature may increase indefinitely or a stable steady state may be reached, depending upon the relative size of the magnet with respect to the refrigeration capacity of the cryocooler. The stability criteria include the temperature-dependent properties of the magnet materials and the refrigeration characteristics of the cryocooler. A useful graphical scheme is presented and the design of the stable magnet/cryocooler interface is demonstrated.

TlCaBaCuO high Tc superconducting microstrip ring resonators designed for 12 GHz

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

1993-01-01

Microwave properties of sputtered Tl-Ca-Ba-Cu-O thin films were investigated by designing, fabricating, and testing microstrip ring resonators. Ring resonators designed for 12 GHz fundamental resonance frequency, were fabricated and tested. From the unloaded Q values for the resonators, the surface resistance was calculated by separating the conductor losses from the total losses. The penetration depth was obtained from the temperature dependence of resonance frequency, assuming that the shift in resonance frequency is mainly due to the temperature dependence of penetration depth. The effective surface resistance at 12 GHz and 77 K was determined to be between 1.5 and 2.75 mOmega, almost an order lower than Cu at the same temperature and frequency. The effective penetration depth at 0 K is approximately 7000 A.

Superconducting phase transitions in mK temperature range in splat-cooled U0.85Pt0.15 alloys

NASA Astrophysics Data System (ADS)

Kim-Ngan, N.-T. H.; Tarnawski, Z.; Chrobak, M.; Sowa, S.; Duda, A.; Paukov, M.; Buturlim, V.; Havela, L.

2018-05-01

We present the temperature and magnetic-field dependence of the electrical resistivity (ρ(T,B)) in the mK temperature range used as a diagnostic tool for the superconductivity of U-Pt alloys prepared by splat-cooling technique. In most of the investigated alloys, a single resistivity drop was observed at the superconducting transition. For splat-cooled U0.85Pt0.15 (U-15 at% Pt) alloys, two drops were revealed around 0.6 K and 1 K tentatively attributed to the superconducting phase transitions of the γ-U phase and α-U phase. The ρ(T,B) characteristics were found to depend on the cooling rate. The superconductivity is characterized by very high upper critical fields, reaching 4.5 T in the 0 K limit.

Temperature dependence of spin-orbit torques in Cu-Au alloys

NASA Astrophysics Data System (ADS)

Wen, Yan; Wu, Jun; Li, Peng; Zhang, Qiang; Zhao, Yuelei; Manchon, Aurelien; Xiao, John Q.; Zhang, Xixiang

2017-03-01

We investigated current driven spin-orbit torques in C u40A u60/N i80F e20/Ti layered structures with in-plane magnetization. We have demonstrated a reliable and convenient method to separate dampinglike torque and fieldlike torque by using the second harmonic technique. It is found that the dampinglike torque and fieldlike torque depend on temperature very differently. Dampinglike torque increases with temperature, while fieldlike torque decreases with temperature, which are different from results obtained previously in other material systems. We observed a nearly linear dependence between the spin Hall angle and longitudinal resistivity, suggesting that skew scattering may be the dominant mechanism of spin-orbit torques.

Diamagnetic Torque Signal and Temperature-Dependent Paramagnetism in Bi2Sr2CaCu2O8+δ

NASA Astrophysics Data System (ADS)

Tsuchiya, Satoshi; Mochiku, Takashi; Ooi, Shuichi; Hirata, Kazuto; Sugii, Kaori; Terashima, Taichi; Uji, Shinya

2017-11-01

Magnetic torque and resistance measurements for the superconducting cuprate Bi2Sr2CaCu2O8+δ with Tc = 87 K have been performed to determine the phase diagram in a parallel magnetic field fields up to 14 T. The anisotropy of the magnetization, derived from the torque, is found to decrease with decreasing temperature below 125 K, which can be ascribed to the temperature dependent paramagnetic spin susceptibility. The angular dependence of the torque clearly shows small diamagnetism due to fluctuating or inhomogeneous superconductivity at temperatures between Tc and ˜100 K. The results suggest that the pseudogap is not of superconducting origin.

Role of Firing Temperature, Sheet Resistance, and Contact Area in Contact Formation on Screen-Printed Metal Contact of Silicon Solar Cell

NASA Astrophysics Data System (ADS)

Ahmad, Samir Mahmmod; Leong, Cheow Siu; Sopian, K.; Zaidi, Saleem H.

2018-03-01

Formation of an Ohmic contact requires a suitable firing temperature, appropriate doping profile, and contact dimensions within resolution limits of the screen-printing process. In this study, the role of the peak firing temperature in standard rapid thermal annealing (RTA) six-zone conveyor belt furnace (CBF) and two inexpensive alternate RTA systems [a custom-designed, three-zone, 5″-diameter quartz tube furnace (QTF) and a tabletop, 3″-diameter rapid thermal processing (RTP)] has been investigated. In addition, the role of sheet resistance and contact area in achieving low-resistance ohmic contacts has been examined. Electrical measurements of ohmic contacts between silver paste/ n +-emitter layer with varying sheet resistances and aluminum paste/ p-doped wafer were carried out in transmission line method configuration. Experimental measurements of the contact resistivity ( ρ c) exhibited the lowest values for CBF at 0.14 mΩ cm2 for Ag and 100 mΩ cm2 for Al at a peak firing temperature of 870°C. For the QTF configuration, lowest measured contact resistivities were 3.1 mΩ cm2 for Ag and 74.1 mΩ cm2 for Al at a peak firing temperature of 925°C. Finally, for the RTP configuration, lowest measured contact resistivities were 1.2 mΩ cm2 for Ag and 68.5 mΩ cm2 for Al at a peak firing temperature of 780°C. The measured contact resistivity exhibits strong linear dependence on sheet resistance. The contact resistivity for Ag decreases with contact area, while for Al the opposite behavior is observed.

Temperature dependence of carrier transport and resistance switching in Pt/SrTi1-xNbxO3 Schottky junctions

NASA Astrophysics Data System (ADS)

Li, Jianyong; Ohashi, Naoki; Okushi, Hideyo; Haneda, Hajime

2011-03-01

We investigated the temperature dependence of carrier transport and resistance switching of Pt/SrTi1-xNbxO3 Schottky junctions in the temperature range 80-400 K by measuring the current-voltage (I-V) characteristics and the frequency dependence of the capacitance-voltage (C-V) characteristics. The I-V curves displayed a high degree of hysteresis, known as the colossal electroresistance (CER) effect, and their temperature dependence showed an anomalous behavior, i.e., the magnitude of the hysteresis increased with decreasing T. The experimental results were analyzed by taking into account the temperature and electric-field dependence of the relative permittivity of SrTi1-xNbxO3 as well as the inhomogeneity of the Schottky barrier height (SBH) (a model in which two parallel current paths coexist in the Schottky barrier). It was confirmed that the observed I-V and C-V curves were well simulated by this model, thus indicating that the CER effects originated in the field emission current through different SBHs and at different locations of the Schottky junctions. Based on these results, we explain the mechanism of the CER effect qualitatively in terms of this model. For this purpose, we take into account the pinched-off effect caused by the small-scale inhomogeneity of SBH and the existence of deep levels as a result of defects and unintentional impurities in the depletion layer of the Pt/SrTi1-xNbxO3 Schottky junctions.

Microwave zero-resistance states in a bilayer electron system.

PubMed

Wiedmann, S; Gusev, G M; Raichev, O E; Bakarov, A K; Portal, J C

2010-07-09

Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power, and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS.

Positive magnetoresistance in Fe3Se4 nanowires

NASA Astrophysics Data System (ADS)

Li, D.; Jiang, J. J.; Liu, W.; Zhang, Z. D.

2011-04-01

We report the magnetotransport properties of Fe3Se4 nanowire arrays in anodic aluminum oxide (AAO) porous membrane. The temperature dependence of resistance of Fe3Se4 nanowires at a zero field shows thermal activated behavior below 295 K. The exponential relationship in resistance is consistent with the model of strong localization with variable-range hopping (VRH) for a finite one-dimensional wire. Resistance versus magnetic field curves below 100 K show small positive magnetoresistance (MR). The field dependencies of log[R(H)/R(0)] explain the positive MR as the effect of magnetic field on the VRH conduction.

Electrical conduction hysteresis in carbon black-filled butyl rubber compounds

NASA Astrophysics Data System (ADS)

Alzamil, M. A.; Alfaramawi, K.; Abboudy, S.; Abulnasr, L.

2018-04-01

Temperature and concentration dependence of electrical resistance of butyl rubber filled with GPF carbon black was carried out. Current-voltage (I-V) characteristics at room-temperature were also investigated. The I-V characteristics show that the behavior is linear at small voltages up to approximately 0.15 V and currents up to 0.05 mA indicating that the conduction mechanism was probably due to electron tunneling from the end of conductive path to the other one under the action of the applied electric field. At higher voltages, a nonlinear behavior was noticed. The nonlinearity was attributed to the joule heating effects. Electrical resistance of the butyl/GPF composites was measured as a function of temperature during heating and cooling cycles from 300 K and upward to a specific temperature. When the specimens were heated up, the resistance was observed to increase continuously with the rise of temperature. However, when the samples were cooled down, the resistance was observed to decrease following a different path. The presence of conduction hysteresis behavior in the resistance-temperature curves during the heating and cooling cycles was then verified. The electrical conduction of the composite system is supposed to follow an activation conduction mechanism. Activation energy was calculated at different filler concentrations for both the heating and cooling processes.

Temperature-dependent residual shear strength characteristics of smectite-bearing landslide soils

NASA Astrophysics Data System (ADS)

Shibasaki, Tatsuya; Matsuura, Sumio; Hasegawa, Yoichi

2017-02-01

This paper presents experimental investigations regarding the effect of temperature on the residual strength of landslide soils at slow-to-moderate shearing velocities. We performed ring-shear tests on 23 soil samples at temperatures of 6-29°C. The test results show that the shear strength of smectite-rich soils decreased when temperatures were relatively low. These positive temperature effects (strength losses at lower temperatures) observed for smectite-bearing soils are typical under relatively slow shearing rates. In contrast, under relatively high shearing rates, strength was gained as temperature decreased. As rheological properties of smectite suspensions are sensitive to environmental factors, such as temperature, pH, and dissolved ions, we inferred that temperature-dependent residual strengths of smectitic soils are also attributed to their specific rheological properties. Visual and scanning electron microscope observations of Ca-bentonite suggest that slickensided shear surfaces at slow shearing rates are very shiny and smooth, whereas those at moderate shearing rates are not glossy and are slightly turbulent, indicating that platy smectite particles are strongly orientated at slow velocities. The positive temperature effect is probably due to temperature-dependent microfriction that is mobilized in the parallel directions of the sheet structure of hydrous smectite particles. On the contrary, the influence of microviscous resistance, which appears in the vertical directions of the lamination, is assumed to increase at faster velocities. Our results imply that if slip-surface soils contain high fractions of smectite, decreases in ground temperature can lead to lowered shear resistance of the slip surface and trigger slow landslide movement.

Role of temperature-dependent O-p-Fe-d hybridization parameter in the metal-insulator transition of Fe3O4: a theoretical study

NASA Astrophysics Data System (ADS)

Fauzi, A. D.; Majidi, M. A.; Rusydi, A.

2017-04-01

We propose a simple tight-binding based model for Fe3O4 that captures the preference of ferrimagnetic over ferromagnetic spin configuration of the system. Our model is consistent with previous theoretical and experimental studies suggesting that the system is half metallic, in which spin polarized electrons hop only among the Fe B sites. To address the metal-insulator transition (MIT) we propose that the strong correlation among electrons, which may also be influenced by the electron-phonon interactions, manifest as the temperature-dependence of the O-p-Fe-d hybridization parameter, particularly Fe-d belonging to one of the Fe B sites (denoted as {t}{{FeB}-{{O}}}(2)). By proposing that this parameter increases as the temperature decreases, our density-of-states calculation successfully captures a gap opening at the Fermi level, transforming the system from half metal to insulator. Within this model along with the corresponding choice of parameters and a certain profile of the temperature dependence of {t}{{FeB}-{{O}}}(2), we calculate the resistivity of the system as a function of temperature. Our calculation result reveals the drastic uprising trend of the resistivity profile as the temperature decreases, with the MIT transition temperature located around 100 K, which is in agreement with experimental data.

“Thermal Stabilization Effect” of Al2O3 nano-dopants improves the high-temperature dielectric performance of polyimide

PubMed Central

Yang, Yang; He, Jinliang; Wu, Guangning; Hu, Jun

2015-01-01

Insulation performance of the dielectrics under extreme conditions always attracts widespread attention in electrical and electronic field. How to improve the high-temperature dielectric properties of insulation materials is one of the key issues in insulation system design of electrical devices. This paper studies the temperature-dependent corona resistance of polyimide (PI)/Al2O3 nanocomposite films under high-frequency square-wave pulse conditions. Extended corona resistant lifetime under high-temperature conditions is experimentally observed in the 2 wt% nanocomposite samples. The “thermal stabilization effect” is proposed to explain this phenomenon which attributes to a new kind of trap band caused by nanoparticles. This effect brings about superior space charge characteristics and corona resistance under high temperature with certain nano-doping concentration. The proposed theory is experimentally demonstrated by space charge analysis and thermally stimulated current (TSC) tests. This discovered effect is of profound significance on improving high-temperature dielectric properties of nanocomposites towards various applications. PMID:26597981

Structure, phase transformations, mechanical characteristics, and cold resistance of low-carbon martensitic steels

NASA Astrophysics Data System (ADS)

Kozvonin, V. A.; Shatsov, A. A.; Ryaposov, I. V.; Zakirova, M. G.; Generalova, K. N.

2016-08-01

Temper-resistant low-carbon Cr-Mn-Ni-Mo-V-Nb steels with concentrations of carbon of 0.15 and 0.27 wt % have been studied. It has been shown that, upon quenching, various morphological types of the α phase can be formed. The structure of the steels is stable in the course of heating below critical temperatures and remains a lath-type structure in the intercritical temperature range. Specific features of structural and phase transformations, as well as the dependence of the mechanical characteristics of the steels, on the tempering temperature have been determined.

Characterisation of electrical resistance for CMC Materials up to 1200 °C

NASA Astrophysics Data System (ADS)

Stäbler, T.; Böhrk, H.; Voggenreiter, H.

2017-12-01

Damage to thermal protection systems (TPS) during atmospheric re-entry is a severe safety issue, especially when considering re-usability of space transportation systems. There is a need for structural health monitoring systems and non-destructive inspection methods. However, damages are hard to detect. When ceramic matrix composites, in this case carbon fibre reinforced silicon carbide (C/C-SiC), are used as a TPS, the electrical properties of the present semiconductor material can be used for health monitoring, since the resistivity changes with damage, strain and temperature. In this work the electrical resistivity as a function of the material temperature is analysed eliminating effects of thermal electricity and the thermal coefficient of electrical resistance is determined. A sensor network is applied for locally and time resolved monitoring of the 300 mm x 120 mm x 3 mm panel shaped samples. Since the material is used for atmospheric re-entry it needs to be characterised for a wide range of temperatures, in this case as high as 1200 °C. Therefore, experiments in an inductively heated test bench were conducted. Firstly, a reference sample was used with thermocouples for characterising the temperature distribution across the sample surface. Secondly, electrical resistance under heat load was measured, time and spatially resolved. Results will be shown and discussed in terms of resistance dependence on temperature, thermal coefficient of electrical resistance, thermal electricity and electrical path orientation including an analysis on effective conducting cross section. Conversely, the thermal coefficient can also be used to determine the material temperature as a function of electrical resistance.

Effect of praseodymium on the electrical resistance of YВа2Сu3О7-δ single crystals

NASA Astrophysics Data System (ADS)

Vovk, R. V.; Vovk, N. R.; Khadzhai, G. Ya.; Goulatis, I. L.; Chroneos, A.

2014-07-01

The electrical resistivity in the ab-plane of the Y1-yPryВа2Сu3О7-δ single crystals with high degree of perfection in the interval of Тc - 300 K was investigated. The increasing of praseodymium content leads to the reduction of the critical temperature (Tc) from 92 to 30 K. The experimental results can be approximated by the expression, taking into account the scattering of electrons by phonons, defects, the fluctuation conductivity in the 3D Aslamazov-Larkin model, as well as the transition to a "semiconductor" type behavior of the resistivity at the high praseodymium concentrations. The concentration dependences of all fitting parameters indicate a structural transition in the region 0.35≤у≤0.43. In particular, the Debye temperature changes in this range from 350 to 550 K, and the transverse coherence length passes through a maximum ξС(0)≈5 Å. The concentration dependence of the critical temperature testifies the d-pairing of the BCS model.

RNA-Seq analysis reveals insight into enhanced rice Xa7-mediated bacterial blight resistance at high temperature.

PubMed

Cohen, Stephen P; Liu, Hongxia; Argueso, Cristiana T; Pereira, Andy; Vera Cruz, Casiana; Verdier, Valerie; Leach, Jan E

2017-01-01

Plant disease is a major challenge to agriculture worldwide, and it is exacerbated by abiotic environmental factors. During some plant-pathogen interactions, heat stress allows pathogens to overcome host resistance, a phenomenon which could severely impact crop productivity considering the global warming trends associated with climate change. Despite the importance of this phenomenon, little is known about the underlying molecular mechanisms. To better understand host plant responses during simultaneous heat and pathogen stress, we conducted a transcriptomics experiment for rice plants (cultivar IRBB61) containing Xa7, a bacterial blight disease resistance (R) gene, that were infected with Xanthomonas oryzae, the bacterial blight pathogen of rice, during high temperature stress. Xa7-mediated resistance is unusual relative to resistance mediated by other R genes in that it functions better at high temperatures. Using RNA-Seq technology, we identified 8,499 differentially expressed genes as temperature responsive in rice cultivar IRBB61 experiencing susceptible and resistant interactions across three time points. Notably, genes in the plant hormone abscisic acid biosynthesis and response pathways were up-regulated by high temperature in both mock-treated plants and plants experiencing a susceptible interaction and were suppressed by high temperature in plants exhibiting Xa7-mediated resistance. Genes responsive to salicylic acid, an important plant hormone for disease resistance, were down-regulated by high temperature during both the susceptible and resistant interactions, suggesting that enhanced Xa7-mediated resistance at high temperature is not dependent on salicylic acid signaling. A DNA sequence motif similar to known abscisic acid-responsive cis-regulatory elements was identified in the promoter region upstream of genes up-regulated in susceptible but down-regulated in resistant interactions. The results of our study suggest that the plant hormone abscisic acid is an important node for cross-talk between plant transcriptional response pathways to high temperature stress and pathogen attack. Genes in this pathway represent an important focus for future study to determine how plants evolved to deal with simultaneous abiotic and biotic stresses.

RNA-Seq analysis reveals insight into enhanced rice Xa7-mediated bacterial blight resistance at high temperature

PubMed Central

Argueso, Cristiana T.; Pereira, Andy; Vera Cruz, Casiana; Verdier, Valerie

2017-01-01

Plant disease is a major challenge to agriculture worldwide, and it is exacerbated by abiotic environmental factors. During some plant-pathogen interactions, heat stress allows pathogens to overcome host resistance, a phenomenon which could severely impact crop productivity considering the global warming trends associated with climate change. Despite the importance of this phenomenon, little is known about the underlying molecular mechanisms. To better understand host plant responses during simultaneous heat and pathogen stress, we conducted a transcriptomics experiment for rice plants (cultivar IRBB61) containing Xa7, a bacterial blight disease resistance (R) gene, that were infected with Xanthomonas oryzae, the bacterial blight pathogen of rice, during high temperature stress. Xa7-mediated resistance is unusual relative to resistance mediated by other R genes in that it functions better at high temperatures. Using RNA-Seq technology, we identified 8,499 differentially expressed genes as temperature responsive in rice cultivar IRBB61 experiencing susceptible and resistant interactions across three time points. Notably, genes in the plant hormone abscisic acid biosynthesis and response pathways were up-regulated by high temperature in both mock-treated plants and plants experiencing a susceptible interaction and were suppressed by high temperature in plants exhibiting Xa7-mediated resistance. Genes responsive to salicylic acid, an important plant hormone for disease resistance, were down-regulated by high temperature during both the susceptible and resistant interactions, suggesting that enhanced Xa7-mediated resistance at high temperature is not dependent on salicylic acid signaling. A DNA sequence motif similar to known abscisic acid-responsive cis-regulatory elements was identified in the promoter region upstream of genes up-regulated in susceptible but down-regulated in resistant interactions. The results of our study suggest that the plant hormone abscisic acid is an important node for cross-talk between plant transcriptional response pathways to high temperature stress and pathogen attack. Genes in this pathway represent an important focus for future study to determine how plants evolved to deal with simultaneous abiotic and biotic stresses. PMID:29107972

Pressure effect on the superconducting and the normal state of β -B i2Pd

NASA Astrophysics Data System (ADS)

Pristáš, G.; Orendáč, Mat.; Gabáni, S.; Kačmarčík, J.; Gažo, E.; Pribulová, Z.; Correa-Orellana, A.; Herrera, E.; Suderow, H.; Samuely, P.

2018-04-01

The pressure effect up to 24.0 kbar on superconducting and normal-state properties of β -B i2Pd single crystal (Tc≈4.98 K at ambient pressure) has been investigated by measurements of the electrical resistivity. In addition, we have performed the heat capacity measurements in the temperature range 0.7-300 K at ambient pressure. The recent calculations of electronic density of states, electron-phonon interaction spectral function, and phonon density of states of β -B i2Pd [Zheng and Margine, Phys. Rev. B 95, 014512 (2017), 10.1103/PhysRevB.95.014512], are used to fit the resistivity and the heat capacity data. In the superconducting state we have focused on the influence of pressure on the superconducting transition temperature Tc and upper critical field Hc 2 and a negative effect with d Tc/d p =-0.025 K /kbar and d Hc 2/d p =-8 mT /kbar is found. A simplified Bloch-Grüneisen model was used to analyze the pressure effect on the temperature dependence of the normal-state resistivity. The obtained results point to a decrease of the electron-phonon coupling parameter λ and to a shift of phonon frequencies to higher values with pressure. Moreover, the temperature dependence of the normal-state resistivity follows a T2 dependence above Tc up to about 25 K. Together with the enhanced value of Sommerfeld coefficient γ =13.23 mJ mo l-1K-2 these results point to a certain role of the electron-electron interaction in the superconducting pairing mechanism in β -B i2Pd .

Dependence of millimeter wave surface resistance on the deposition parameters of laser ablated YBa2Cu3O(x) thin films

NASA Technical Reports Server (NTRS)

Wosik, J.; Robin, T.; Davis, M.; Wolfe, J. C.; Forster, K.; Deshmukh, S.; Bensaoula, A.; Sega, R.; Economou, D.; Ignatiev, A.

1990-01-01

Measurements of millimeter-wave surface resistance versus temperature have been performed for YBa2Cu3O(x) thin films on 100 line-type SrTiO(3) substrates using a TE(011) cylindrical copper cavity at 80 GHz. The 0.6-micron thick films were grown at several deposition temperatures in the range 690 C to 810 C by means of a pulsed excimer laser ablation technique. A surface resistance minimum (60 milliohm at 77 K) near 770 C is shown to correlate with a minimum in c-axis lattice parameter (11.72 A). The highest value of Tc also occurs near this temperature. The surface resistance of films deposited at 790 C on 110 line-type LaAlO3 subtrates is lower, reaching 8 milliohm at 98 GHz and 80 K, demonstrating the influence of substate material on film quality.

Temperature-Dependent Electrical and Micromechanical Properties of Lanthanum Titanate with Additions of Yttria

NASA Technical Reports Server (NTRS)

Goldsby, Jon C.

2010-01-01

Temperature-dependent elastic properties were determined by establishing continuous flexural vibrations in the material at its lowest resonance frequency of 31tHz. The imaginary part of the complex impedance plotted as a function of frequency and temperature reveals a thermally activated peak, which decreases in magnitude as the temperature increases. Additions of yttria do not degrade the electromechanical in particularly the elastic and anelastic properties of lanthanum titanate. Y2O3/La2Ti2O7 exhibits extremely low internal friction and hence may be more mechanical fatigue-resistant at low strains.

Control of lithium metal anode cycleability by electrolyte temperature

NASA Astrophysics Data System (ADS)

Ishikawa, Masashi; Kanemoto, Manabu; Morita, Masayuki

Precycling of lithium (Li) metal on a nickel substrate at low temperatures (0 and -20°C) in propylene carbonate (PC) mixed with dimethyl carbonate (DMC) and Li hexafluorophosphate (LiPF 6) (LiPF 6-PC/DMC) was found to enhance Li cycleability in the subsequent cycles at a room temperature (25°C). In contrast when the precycling at the low temperatures was performed in PC mixed with 2-methyltetrahydrofuran (2MeTHF) and LiPF 6 (LiPF 6-PC/2MeTHF), no improvement in the Li cycling efficiency was observed in the subsequent cycles at 25°C. These results suggest that the low-temperature precycling effect on the Li cycleability depends on a co-solvent used in the PC-based electrolytes. Ac impedance analysis revealed that the precycling in the low-temperature LiPF 6-PC/DMC electrolyte provided a compact Li interface with a low resistance. In marked constant to this, a Li anode interface formed by the precycling in the LiPF 6-PC/2MeTHF system was irregular and resistive to Li-ion diffusion. The origins of the low-temperature precycling effect dependent on the co-solvents were discussed.

Effect of Carbon on the Electrical Properties of Copper Oxide-Based Bulk Composites

NASA Astrophysics Data System (ADS)

Kalinin, Yu. E.; Kashirin, M. A.; Makagonov, V. A.; Pankov, S. Yu.; Sitnikov, A. V.

2018-04-01

The effect of carbon filler on the electrical resistance and the thermopower of copper oxide-based composites produced by ceramic technology by hot pressing has been studied. It is found that the dependences of the electrical resistivity on the filler concentration are characteristic by S-like curves that are typical of percolation systems; in this case, the resistivity decreases more substantially as the carbon content increases as compared to the decrease in thermopower value, which is accompanied by the existence of the maximum of the factor of thermoelectric power near the percolation threshold. The studies of the temperature dependences of the resistivity and the thermopower at low temperatures show that, in the range 240-300 K, the predominant mechanism of the electrotransfer of all the composites under study is the hopping mechanism. At temperatures lower than 240 K, the composites with a nanocrystalline CuO matrix have a hopping conductivity with a variable hopping distance over localized states of the matrix near the Fermi level, which is related to the conductivity over intergrain CuO boundaries. A schematic model of the band structure of nanocrystalline CuO with carbon filler is proposed on the base of the analysis of the found experimental regularities of the electrotransfer.

Thermoelectric properties of Ge 1-xSn xTe crystals grown by vertical Bridgman method

NASA Astrophysics Data System (ADS)

Wu, C. C.; Ferng, N. J.; Gau, H. J.

2007-06-01

Single crystals of Ge 1-xSn xTe compounds with x=0, 0.8, 0.9 and 1.0 were grown by vertical Bridgman method. The crystalline phase and stochiometry for these crystals were investigated by X-ray diffraction, metallographic microscope as well as electron-probe microanalysis (EPMA). Electrical property of the as-grown samples was characterized using room temperature resistivity and Hall measurements. The thermoelectric behaviors for the Ge 1-xSn xTe crystals were studied by means of thermal and carrier transport measurements. Temperature dependences of resistivity, Seebeck coefficient and thermal conductivity for the various compositions of Ge 1-xSn xTe were analyzed. A two-valence band model was proposed to describe the temperature dependence of thermoelectric property of the Ge 1-xSn xTe crystals. The dimensionless thermoelectric figure of merit ZT for the alloys was evaluated and discussed.

Electron transport in the two-dimensional channel material - zinc oxide nanoflake

NASA Astrophysics Data System (ADS)

Lai, Jian-Jhong; Jian, Dunliang; Lin, Yen-Fu; Ku, Ming-Ming; Jian, Wen-Bin

2018-03-01

ZnO nanoflakes of 3-5 μm in lateral size and 15-20 nm in thickness are synthesized. The nanoflakes are used to make back-gated transistor devices. Electron transport in the ZnO nanoflake channel between source and drain electrodes are investigated. In the beginning, we argue and determine that electrons are in a two-dimensional system. We then apply Mott's two-dimensional variable range hopping model to analyze temperature and electric field dependences of resistivity. The disorder parameter, localization length, hopping distance, and hopping energy of the electron system in ZnO nanoflakes are obtained and, additionally, their temperature behaviors and dependences on room-temperature resistivity are presented. On the other hand, the basic transfer characteristics of the channel material are carried out, as well, and the carrier concentration, the mobility, and the Fermi wavelength of two-dimensional ZnO nanoflakes are estimated.

Redistribution of oxygen ions in single crystal YBa2Cu3O7-x owing to external hydrostatic pressure

NASA Astrophysics Data System (ADS)

Boiko, Yu. I.; Bogdanov, V. V.; Vovk, R. V.; Khadzhai, G. Ya.; Savich, S. V.

2018-01-01

The effect of high hydrostatic pressure on the temperature dependences of the electrical resistance in the basal plane of single crystal YBa2Cu3O7-x with an oxygen deficit is studied. It is found that an external hydrostatic pressure P ≈ 7 kbar substantially intensifies the diffusive coalescence of oxygen clusters, i.e., causes an increase in their average size. This, in turn, produces an increased number of negative U-centers whose presence leads to the appearance of a phase capable of generating paired carriers of electrical charge and is, therefore, characterized by a higher transition temperature Tc. Changes in the form of the temperature and time dependences of the electrical resistivity under external hydrostatic pressure are discussed in terms of this same hypothesis regarding the mechanism of diffusive coalescence of oxygen clusters.

Understanding the liquid-liquid (water-hexane) interface

NASA Astrophysics Data System (ADS)

Murad, Sohail; Puri, Ishwar K.

2017-10-01

Nonequilibrium molecular dynamics simulations are employed to investigate the interfacial thermal resistance of nanoscale hexane-water interfaces subject to an applied heat flux. Our studies show that these liquid-liquid interfaces exhibit behavior significantly dissimilar to that of solid-liquid and solid-vapor interfaces. Notably, the thermal resistance of a hexane-water interface is contingent on the interfacial temperature gradient alone with negligible dependence on the mean interfacial temperature, while the solid-liquid dependent strongly on the interfacial temperature. Application of a heat flux also increases the interface thickness significantly as compared to an equilibrium isothermal interface. Since liquid-liquid interfaces have been proposed for diverse applications, e.g., sensors for wastewater treatment and for extraction of toxic ions from water, they can be designed to be wider by applying a heat flux. This may allow the interface to be used for other applications not possible currently because of the very limited thickness of the interface in isothermal systems.

Effect of charge ordering and phase separation on the electrical and magnetoresistive properties of polycrystalline La0.4Eu0.1Ca0.5MnO3

NASA Astrophysics Data System (ADS)

Krichene, A.; Boujelben, W.; Mukherjee, S.; Shah, N. A.; Solanki, P. S.

2018-03-01

We have investigated the effect of charge ordering and phase separation on the electrical and magnetotransport properties of La0.4Eu0.1Ca0.5MnO3 polycrystalline sample. Temperature dependence of resistivity shows a metal-insulator transition at transition temperature Tρ. A hysteretic behavior is observed for zero field resistivity curves with Tρ = 128 K on cooling process and Tρ = 136 K on warming process. Zero field resistivity curves follow Zener polynomial law in the metallic phase with unusual n exponent value ∼9. Presence of resistivity minimum at low temperatures has been ascribed to the coulombic electron-electron scattering process. Resistivity modification due to the magnetic field cycling testifies the presence of the training effect. Magnetization and resistivity appear to be highly correlated. Magnetoresistive study reveals colossal values of negative magnetoresistance reaching about 75% at 132 K under only 2T applied field. Colossal values of magnetoresistance suggest the possibility of using this sample for magnetic field sensing and spintronic applications.

Elevated transition temperature in Ge doped VO2 thin films

NASA Astrophysics Data System (ADS)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Arabidopsis TNL-WRKY domain receptor RRS1 contributes to temperature-conditioned RPS4 auto-immunity

PubMed Central

Heidrich, Katharina; Tsuda, Kenichi; Blanvillain-Baufumé, Servane; Wirthmueller, Lennart; Bautor, Jaqueline; Parker, Jane E.

2013-01-01

In plant effector-triggered immunity (ETI), intracellular nucleotide binding-leucine rich repeat (NLR) receptors are activated by specific pathogen effectors. The Arabidopsis TIR (Toll-Interleukin-1 receptor domain)-NLR (denoted TNL) gene pair, RPS4 and RRS1, confers resistance to Pseudomonas syringae pv tomato (Pst) strain DC3000 expressing the Type III-secreted effector, AvrRps4. Nuclear accumulation of AvrRps4, RPS4, and the TNL resistance regulator EDS1 is necessary for ETI. RRS1 possesses a C-terminal “WRKY” transcription factor DNA binding domain suggesting that important RPS4/RRS1 recognition and/or resistance signaling events occur at the nuclear chromatin. In Arabidopsis accession Ws-0, the RPS4Ws/RRS1Ws allelic pair governs resistance to Pst/AvrRps4 accompanied by host programed cell death (pcd). In accession Col-0, RPS4Col/RRS1Col effectively limits Pst/AvrRps4 growth without pcd. Constitutive expression of HA-StrepII tagged RPS4Col (in a 35S:RPS4-HS line) confers temperature-conditioned EDS1-dependent auto-immunity. Here we show that a high (28°C, non-permissive) to moderate (19°C, permissive) temperature shift of 35S:RPS4-HS plants can be used to follow defense-related transcriptional dynamics without a pathogen effector trigger. By comparing responses of 35S:RPS4-HS with 35S:RPS4-HS rrs1-11 and 35S:RPS4-HS eds1-2 mutants, we establish that RPS4Col auto-immunity depends entirely on EDS1 and partially on RRS1Col. Examination of gene expression microarray data over 24 h after temperature shift reveals a mainly quantitative RRS1Col contribution to up- or down-regulation of a small subset of RPS4Col-reprogramed, EDS1-dependent genes. We find significant over-representation of WRKY transcription factor binding W-box cis-elements within the promoters of these genes. Our data show that RRS1Col contributes to temperature-conditioned RPS4Col auto-immunity and are consistent with activated RPS4Col engaging RRS1Col for resistance signaling. PMID:24146667

Effect of 50 MeV Li3 + irradiation on structural and electrical properties of Mn-doped ZnO

NASA Astrophysics Data System (ADS)

Neogi, S. K.; Chattopadhyay, S.; Banerjee, Aritra; Bandyopadhyay, S.; Sarkar, A.; Kumar, Ravi

2011-05-01

The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn1 - xMnxO-type system. Zn1 - xMnxO (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li3 + ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn0.98Mn0.02O, whereas for the Zn0.96Mn0.04O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn0.98Mn0.02O, the observed sharp decrease in room temperature resistivity (ρRT) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn0.96Mn0.04O, ρRT decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn0.98Mn0.02O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn0.96Mn0.04O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

Effect of 50 MeV Li3+ irradiation on structural and electrical properties of Mn-doped ZnO.

PubMed

Neogi, S K; Chattopadhyay, S; Banerjee, Aritra; Bandyopadhyay, S; Sarkar, A; Kumar, Ravi

2011-05-25

The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn(1 - x)Mn(x)O-type system. Zn(1 - x)Mn(x)O (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li(3+) ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn(0.98)Mn(0.02)O, whereas for the Zn(0.96)Mn(0.04)O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn(0.98)Mn(0.02)O, the observed sharp decrease in room temperature resistivity (ρ(RT)) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn(0.96)Mn(0.04)O, ρ(RT) decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn(0.98)Mn(0.02)O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn(0.96)Mn(0.04)O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

Localized phase change of VO2 films grown by atomic-layer deposition on InAlN/AlN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Downey, Brian P.; Wheeler, Virginia D.; Meyer, David J.

2017-06-01

We demonstrate the thermally actuated phase change of VO2 films formed by atomic layer deposition and subsequent thermal annealing on InAlN/AlN/GaN heterostructures. To locally raise the device temperature above the VO2 semiconductor-metal transition temperature, a two-dimensional electron gas formed within the InAlN/AlN/GaN heterostructure was used as an integrated resistive heater. An ON/OFF resistance ratio of nearly 103 was achieved for 50 nm VO2 films over a temperature range of 25 to 105 °C. The time required to switch the VO2 film from high- to low-resistance states was shown to depend on the applied heater power, with sub-microsecond transition times achieved.

Resistive Oxygen Gas Sensors for Harsh Environments

PubMed Central

Moos, Ralf; Izu, Noriya; Rettig, Frank; Reiß, Sebastian; Shin, Woosuck; Matsubara, Ichiro

2011-01-01

Resistive oxygen sensors are an inexpensive alternative to the classical potentiometric zirconia oxygen sensor, especially for use in harsh environments and at temperatures of several hundred °C or even higher. This device-oriented paper gives a historical overview on the development of these sensor materials. It focuses especially on approaches to obtain a temperature independent behavior. It is shown that although in the past 40 years there have always been several research groups working concurrently with resistive oxygen sensors, novel ideas continue to emerge today with respect to improvements of the sensor response time, the temperature dependence, the long-term stability or the manufacture of the devices themselves using novel techniques for the sensitive films. Materials that are the focus of this review are metal oxides; especially titania, titanates, and ceria-based formulations. PMID:22163805

Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb / Si ( 1 1 1 ) ₋ ( 7 × 7 )

DOE PAGES

Jałochowski, M.; Zdyb, R.; Tringides, M. C.

2016-02-23

The growth of Pb on Si(111)-7x7 at temperatures from 72 K to 201 K has been investigated using in situ electrical resistivity measurements and Scanning Tunneling Microscopy (STM). For temperatures T>140 K the specific resistivity ρ(θ) vs coverage θ shows an unusual "hump", instead of the expected monotonic decrease with θ. This novel result correlates well with the formation of uniform height 8-layer Pb islands and the superdiffusive motion of the wetting layer, despite the low temperatures. A model of the film resistivity as two resistors in series, the amorphous wetting layer and the crystalline islands, explains quantitatively the resistivitymore » dependence on θ.« less

Tunable electrical conductivity of individual graphene oxide sheets reduced at "low" temperatures.

PubMed

Jung, Inhwa; Dikin, Dmitriy A; Piner, Richard D; Ruoff, Rodney S

2008-12-01

Step-by-step controllable thermal reduction of individual graphene oxide sheets, incorporated into multiterminal field effect devices, was carried out at low temperatures (125-240 degrees C) with simultaneous electrical measurements. Symmetric hysteresis-free ambipolar (electron- and hole-type) gate dependences were observed as soon as the first measurable resistance was reached. The conductivity of each of the fabricated devices depended on the level of reduction (was increased more than 10(6) times as reduction progressed), strength of the external electrical field, density of the transport current, and temperature.

The electrical transport properties of liquid Rb using pseudopotential theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, A. B., E-mail: amit07patel@gmail.com; Bhatt, N. K., E-mail: amit07patel@gmail.com; Thakore, B. Y., E-mail: amit07patel@gmail.com

2014-04-24

Certain electric transport properties of liquid Rb are reported. The electrical resistivity is calculated by using the self-consistent approximation as suggested by Ferraz and March. The pseudopotential due to Hasegawa et al for full electron-ion interaction, which is valid for all electrons and contains the repulsive delta function due to achieve the necessary s-pseudisation was used for the calculation. Temperature dependence of structure factor is considered through temperature dependent potential parameter in the pair potential. Finally, thermo-electric power and thermal conductivity are obtained. The outcome of the present study is discussed in light of other such results, and confirms themore » applicability of pseudopotential at very high temperature via temperature dependent pair potential.« less

Anisotropic magnetic properties of the ferromagnetic semiconductor CrSbSe3

NASA Astrophysics Data System (ADS)

Kong, Tai; Stolze, Karoline; Ni, Danrui; Kushwaha, Satya K.; Cava, Robert J.

2018-01-01

Single crystals of CrSbSe3, a structurally pseudo-one-dimensional ferromagnetic semiconductor, were grown using a high-temperature solution growth technique and were characterized by x-ray diffraction, anisotropic temperature- and field-dependent magnetization, temperature-dependent resistivity, and optical absorption measurements. A band gap of 0.7 eV was determined from both resistivity and optical measurements. At high temperatures, CrSbSe3 is paramagnetic and isotropic, with a Curie-Weiss temperature of ˜145 K and an effective moment of ˜4.1 μB /Cr. A ferromagnetic transition occurs at Tc=71 K. The a axis, perpendicular to the chains in the structure, is the magnetic easy axis, while the chain axis direction, along b , is the hard axis. Magnetic isotherms measured around Tc do not follow the behavior predicted by simple mean-field critical exponents for a second-order phase transition. A tentative set of critical exponents is estimated based on a modified Arrott plot analysis, giving β ˜0.25 , γ ˜1.38 , and δ ˜6.6 .

An investigation of the kinetics of hydrogen chemisorption on iron metal surfaces

NASA Technical Reports Server (NTRS)

Shanabarger, M. R.

1982-01-01

The isothermal kinetics of H2, H2S, and O2 chemisorption onto epitaxially grown (III) oriented Fe films were studied. The measurements were made using the techniques of chemisorption induced resistance change and Auger electron spectroscopy (for adsorbed sulfur and oxygen). Also the origin of the chemisorption induced resistance change for these systems and its applicability to kinetic measurements were established. The chemisorption kinetics were interpreted as dissociative chemisorption via an adsorbed molecular species. The applicable rate constants were established. In none of the studies were the rate constants observed to be coverage dependent. By comparing the temperature dependence of the rate constants with absolute rate theory, the binding energies and activation energies of all the kinetic processes were obtained for the H2/Fe system. The initial sticking coefficient was pressure dependent for both the H2/Fe and H2S/Fe systems. This results from the step between the adsorbed molecular state and the dissociated chemisorbed state being the rate limiting step for absorption at certain pressures and temperatures. Estimates were obtained for the temperature dependence of the rate constants for the O2/Fe system.

Electrical resistivity of substitutionally disordered hcp Fe-Si and Fe-Ni alloys: Chemically-induced resistivity saturation in the Earth's core

NASA Astrophysics Data System (ADS)

Gomi, Hitoshi; Hirose, Kei; Akai, Hisazumi; Fei, Yingwei

2016-10-01

The thermal conductivity of the Earth's core can be estimated from its electrical resistivity via the Wiedemann-Franz law. However, previously reported resistivity values are rather scattered, mainly due to the lack of knowledge with regard to resistivity saturation (violations of the Bloch-Grüneisen law and the Matthiessen's rule). Here we conducted high-pressure experiments and first-principles calculations in order to clarify the relationship between the resistivity saturation and the impurity resistivity of substitutional silicon in hexagonal-close-packed (hcp) iron. We measured the electrical resistivity of Fe-Si alloys (iron with 1, 2, 4, 6.5, and 9 wt.% silicon) using four-terminal method in a diamond-anvil cell up to 90 GPa at 300 K. We also computed the electronic band structure of substitutionally disordered hcp Fe-Si and Fe-Ni alloy systems by means of Korringa-Kohn-Rostoker method with coherent potential approximation (KKR-CPA). The electrical resistivity was then calculated from the Kubo-Greenwood formula. These experimental and theoretical results show excellent agreement with each other, and the first principles results show the saturation behavior at high silicon concentration. We further calculated the resistivity of Fe-Ni-Si ternary alloys and found the violation of the Matthiessen's rule as a consequence of the resistivity saturation. Such resistivity saturation has important implications for core dynamics. The saturation effect places the upper limit of the resistivity, resulting in that the total resistivity value has almost no temperature dependence. As a consequence, the core thermal conductivity has a lower bound and exhibits a linear temperature dependence. We predict the electrical resistivity at the top of the Earth's core to be 1.12 ×10-6 Ωm, which corresponds to the thermal conductivity of 87.1 W/m/K. Such high thermal conductivity suggests high isentropic heat flow, leading to young inner core age (<0.85 Gyr old) and high initial core temperature. It also strongly suppresses thermal convection in the core, which results in no convective motion in inner core and possibly thermally stratified layer in the outer core.

Numerical modelling of dynamic resistance in high-temperature superconducting coated-conductor wires

NASA Astrophysics Data System (ADS)

Ainslie, Mark D.; Bumby, Chris W.; Jiang, Zhenan; Toyomoto, Ryuki; Amemiya, Naoyuki

2018-07-01

The use of superconducting wire within AC power systems is complicated by the dissipative interactions that occur when a superconductor is exposed to an alternating current and/or magnetic field, giving rise to a superconducting AC loss caused by the motion of vortices within the superconducting material. When a superconductor is exposed to an alternating field whilst carrying a constant DC transport current, a DC electrical resistance can be observed, commonly referred to as ‘dynamic resistance.’ Dynamic resistance is relevant to many potential high-temperature superconducting (HTS) applications and has been identified as critical to understanding the operating mechanism of HTS flux pump devices. In this paper, a 2D numerical model based on the finite-element method and implementing the H -formulation is used to calculate the dynamic resistance and total AC loss in a coated-conductor HTS wire carrying an arbitrary DC transport current and exposed to background AC magnetic fields up to 100 mT. The measured angular dependence of the superconducting properties of the wire are used as input data, and the model is validated using experimental data for magnetic fields perpendicular to the plane of the wire, as well as at angles of 30° and 60° to this axis. The model is used to obtain insights into the characteristics of such dynamic resistance, including its relationship with the applied current and field, the wire’s superconducting properties, the threshold field above which dynamic resistance is generated and the flux-flow resistance that arises when the total driven transport current exceeds the field-dependent critical current, I c( B ), of the wire. It is shown that the dynamic resistance can be mostly determined by the perpendicular field component with subtle differences determined by the angular dependence of the superconducting properties of the wire. The dynamic resistance in parallel fields is essentially negligible until J c is exceeded and flux-flow resistance occurs.

Size effects and electron microscopy of thin metal films. M.S. Thesis

NASA Technical Reports Server (NTRS)

Hernandez, J. D.

1978-01-01

All films were deposited by resistive heated evaporation in an oil diffusion pumped vacuum system (ultimate approx. equal to 0.0000001 torr). The growth from nuclei to a continuous film is highly dependent on the deposition parameters, evaporation rate as well as substrate material and substrate temperature. The growth stages of a film and the dependence of grain size on various deposition and annealing parameters are shown. Resistivity measurements were taken on thin films to observe size effects.

The Effect of Grain Size on the Radiation Response of Silicon Carbide and its Dependence on Irradiation Species and Temperature

NASA Astrophysics Data System (ADS)

Jamison, Laura

In recent years the push for green energy sources has intensified, and as part of that effort accident tolerant and more efficient nuclear reactors have been designed. These reactors demand exceptional material performance, as they call for higher temperatures and doses. Silicon carbide (SiC) is a strong candidate material for many of these designs due to its low neutron cross-section, chemical stability, and high temperature resistance. The possibility of improving the radiation resistance of SiC by reducing the grain size (thus increasing the sink density) is explored in this work. In-situ electron irradiation and Kr ion irradiation was utilized to explore the radiation resistance of nanocrystalline SiC (nc-SiC), SiC nanopowders, and microcrystalline SiC. Electron irradiation simplifies the experimental results, as only isolated Frenkel pairs are produced so any observed differences are simply due to point defect interactions with the original microstructure. Kr ion irradiation simulates neutron damage, as large radiation cascades with a high concentration of point defects are produced. Kr irradiation studies found that radiation resistance decreased with particle size reduction and grain refinement (comparing nc-SiC and microcrystalline SiC). This suggests that an interface-dependent amorphization mechanism is active in SiC, suggested to be interstitial starvation. However, under electron irradiation it was found that nc-SiC had improved radiation resistance compared to single crystal SiC. This was found to be due to several factors including increased sink density and strength and the presence of stacking faults. The stacking faults were found to improve radiation response by lowering critical energy barriers. The change in radiation response between the electron and Kr ion irradiations is hypothesized to be due to either the change in ion type (potential change in amorphization mechanism) or a change in temperature (at the higher temperatures of the Kr ion irradiation, critical energy barriers can be overcome without the assistance of stacking faults). The dependence of the radiation response of SiC on grain size is not as straight forward as initially presumed. The stacking faults present in many nc-SiC materials boost radiation resistance, but an increased number of interfaces may lead to a reduction in radiation response.

Effect of high pressure on the electrical resistivity of optimally doped YBa2Cu3O7-δ single crystals with unidirectional planar defects

NASA Astrophysics Data System (ADS)

Vovk, R. V.; Vovk, N. R.; Khadzhai, G. Ya.; Goulatis, I. L.; Chroneos, A.

2013-08-01

In the present work the effect of hydrostatic pressure up to 10 kbar on in-plane electrical resistivity of well-structured YBa2Cu3O7-δ (δ<0.15, Тс≈91 K, ΔТс≈0.3 K) single crystals was investigated. The influence of the twin boundaries on the electrical resistivity was minimized. The resistivities temperature dependences in the interval Тс up to 300 K can be approximated by taking into account the linear term at high temperatures and the fluctuation conductivity (Maki-Thompson model) near Тс. The parameters of the linear dependence of R(T) are decreasing as the pressure is increasing. Тс increases linearly when the pressure increases with the derivative dTc/dP≈0.080 K/kbar. Among the Maki-Thompson model parameters the inter-layer distance, d, can be considered to be independent from pressure, the transverse coherence length, ξc(0)∼0.1d.

Freezing avoidance mechanisms in juveniles of giant rosette plants of the genus Espeletia

NASA Astrophysics Data System (ADS)

García-Varela, Sonia; Rada, Fermín

2003-07-01

Along soil-air gradients in tropical high mountains, plants growing at soil level tolerate frost while those growing well above ground, including all species in the genus Espeletia, use freezing avoidance mechanisms to survive low nighttime temperatures. The question that arises and the objective of this work were: What are the low temperature resistance mechanisms in giant rosettes when they are within the juvenile stages, i.e. closer to the ground? Juveniles of Espeletia spicata and Espeletia timotensis, dominant plants of the high Venezuelan Andes, were chosen for this study. To determine resistance mechanisms for these species, air and leaf temperatures were recorded in the field in 24 h cycles, while thermal analysis and injury temperature were determined in the laboratory. Both E. spicata and E. timotensis juveniles depend on avoidance mechanisms through a high supercooling capacity, permitting leaves to resist low nighttime temperatures. Minimum leaf temperatures were -4.9 and -5.1 °C, for E. spicata and E. timotensis, respectively, occurring during the dry season. Ice formation occurred at -14.3 and -15.3 °C for E. spicata and E. timotensis, respectively. Injury occurred at approximately -15 °C in both species. Low temperature resistance mechanisms in juveniles are similar to those in adult plants.

Radiation effects in heteroepitaxial InP solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Curtis, H. B.; Swartz, C. K.; Brinker, D. J.; Vargas-Aburto, C.

1993-01-01

Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

Microwave-induced resistance oscillations on a high-mobility two-dimensional electron gas: Exact waveform, absorption/reflection and temperature damping

NASA Astrophysics Data System (ADS)

Studenikin, S. A.; Potemski, M.; Sachrajda, A.; Hilke, M.; Pfeiffer, L. N.; West, K. W.

2005-06-01

In this work we address experimentally a number of unresolved issues related to microwave induced resistance oscillations (MIROs) leading to the zero-resistance states observed recently on 2D electron gases in GaAs/AlGaAs heterostructures. We stress the importance of the electrodynamic effects detected in both reflection and absorption experiments, although they are not revealed in transport experiments on very high mobility samples. We also study the exact waveform of MIROs and their damping due to temperature. A simple equation is given, which can be considered as phenomenological, which describes precisely the experimental MIROs waveform. The waveform depends only on a single parameter—the width of the Landau levels, which is related to the quantum lifetime. A very good correlation was found between the temperature dependencies of the quantum lifetime from MIROs and the transport scattering time from the electron mobility with a ratio τtr/τq≃20 . It is found that the prefactor in the equation for MIROs decays as 1/T2 with the temperature which can be explained within the distribution function model suggested by Dmitriev . The results are compared with measurements of the Shubnikov-de Haas oscillations down to 30mK on the same sample.

The contribution of grain boundary and defects to the resistivity in the ferromagnetic state of polycrystalline manganites

NASA Astrophysics Data System (ADS)

Sagdeo, P. R.; Anwar, Shahid; Lalla, N. P.; Patil, S. I.

2006-11-01

In the present study we report the precise resistivity measurements for the polycrystalline bulk sample as well as highly oriented thin-films of La 0.8Ca 0.2MnO 3. The poly crystalline sample was prepared by standard solid-state reaction route and the oriented thin film was prepared by pulsed laser deposition (PLD). The phase purity of these samples was confirmed by X-ray diffraction and the back-scattered electron imaging using scanning electron microscopy (SEM). The oxygen stoichiometry analysis was done by iodimetry titration. The resistivities of these samples were carried out with four-probe resistivity measurement setup. The observed temperature dependence of resistivity data for both the samples was fitted using the polaron model. We have found that polaronic model fits well with the experimental data of both polycrystalline and single crystal samples. A new phenomenological model is proposed and used to estimate contribution to the resistivity due to grain boundary in the ferromagnetic state of polycrystalline manganites and it has been shown that the scattering of electrons from the grain boundary (grain surface) is a function of temperature and controlled by the effective grain resistance at that temperature.

Exploring electrical resistance: a novel kinesthetic model helps to resolve some misconceptions

NASA Astrophysics Data System (ADS)

Cottle, Dan; Marshall, Rick

2016-09-01

A simple ‘hands on’ physical model is described which displays analogous behaviour to some aspects of the free electron theory of metals. Using it students can get a real feel for what is going on inside a metallic conductor. Ohms Law, the temperature dependence of resistivity, the dependence of resistance on geometry, how the conduction electrons respond to a potential difference and the concepts of mean free path and drift speed of the conduction electrons can all be explored. Some quantitative results obtained by using the model are compared with the predictions of Drude’s free electron theory of electrical conduction.

Structural, transport and magnetotransport properties of Ru-doped La0.5Sr0.5Mn1-xRuxO3 (x = 0.0 & 0.05) manganite

NASA Astrophysics Data System (ADS)

Jethva, Sadaf; Katba, Savan; Udeshi, Malay; Kuberkar, D. G.

2017-09-01

We report the results of the structural, transport and magnetotransport studies on polycrystalline La0.5Sr0.5Mn1-xRuxO3 (x = 0.0 and 0.05) manganite investigated using XRD and resistivity (with and without field) measurements. Rietveld refinement of XRD patterns confirms the single phasic tetragonal structure for both the samples crystalizing in I4/mcm space group (No. 140). Low-temperature resistivity and MR measurements with H = 0 T & 5 T field show thermal hysteresis which has been attributed to the first order phase transition. The increase in resistivity and decrease in metal - insulator transition temperature (TMI) with Ru - doping concentration in La0.5Sr0.5MnO3 (LSMO) has been understood in the context of superexchange interaction between Mn and Ru ions. The observed upturn in resistivity at low temperature under field has been explained using combined effect of electron - electron (e - e) interaction, Kondo-like spin-dependent scattering and electron - phonon interaction while the variation in resistivity at high temperature (T > Tp) has been explained using adiabatic small polaron hopping model.

Intrinsic electrical properties of LuFe2O4

NASA Astrophysics Data System (ADS)

Lafuerza, Sara; García, Joaquín; Subías, Gloria; Blasco, Javier; Conder, Kazimierz; Pomjakushina, Ekaterina

2013-08-01

We here revisit the electrical properties of LuFe2O4, compound candidate for exhibiting multiferroicity. Measurements of dc electrical resistivity as a function of temperature, electric-field polarization measurements at low temperatures with and without magnetic field, and complex impedance as a function of both frequency and temperature were carried out in a LuFe2O4 single crystal, perpendicular and parallel to the hexagonal c axis, and in several ceramic polycrystalline samples. Resistivity measurements reveal that this material is a highly anisotropic semiconductor, being about two orders of magnitude more resistive along the c axis. The temperature dependence of the resistivity indicates a change in the conduction mechanism at TCO ≈ 320 K from thermal activation above TCO to variable range hopping below TCO. The resistivity values at room temperature are relatively small and are below 5000 Ω cm for all samples but we carried out polarization measurements at sufficiently low temperatures, showing that electric-field polarization curves are a straight line as expected for a paraelectric or antiferroelectric material. Furthermore, no differences are found in the polarization curves when a magnetic field is applied either parallel or perpendicular to the electric field. The analysis of the complex impedance data corroborates that the claimed colossal dielectric constant is a spurious effect mainly derived from the capacitance of the electrical contacts. Therefore, our data unequivocally evidence that LuFe2O4 is not ferroelectric.

Processing effects on microstructure, percolation and resistive sensor properties of nickel-zirconium oxide cermet films on silicon substrates

NASA Astrophysics Data System (ADS)

Sundeen, John Edward, Jr.

Thin Ni-ZrO2 cermet films were developed on silicon substrates using solution based, metallo-organic deposition (MOD) technique. The nickel based cermet films on silicon are of interest for heater, temperature and flow sensor devices, particularly in automotive or aerospace applications at UP to 250°C. In this study, precursors for the NiO-ZrO2 composite films were derived from metal carboxylate and nitrate based solutions. Composition and heat treatment conditions were the main process variables for controlling the structure, particle size and morphology, on which the electrical properties depend. Electrical resistance behavior was studied for Ni-ZrO2 films with 25--78 vol.% Ni content. This Ni amount exceeds the percolation threshold for conduction. The dependence of the resistance on individual processing variables, including film thickness, ambient flow rate, sintering temperature and time, and specimen geometry was studied. Electrical characterization included establishing the percolative resistive behavior in the MOD Ni-ZrO2 films. A resistive percolation threshold (pc) at ˜25 vol.% Ni was found for 800°C sintered, 1mum thick Ni-ZrO2 films. Existing models including the general effective media (GEM) percolation equation, and mixture rules were used to develop a predictive expression for Ni-ZrO2 film resistance as a function of composition. Kinetic analysis of particle size in the 55 vol.% Ni cermet films was directly correlated to the sheet resistance (Rs) of the films. The temperature coefficient of resistance (TCR) was also correlated to R s, by the equation: (TCR)alpha = alphao - betaR s. These electrical characteristics make the films suitable for use as gas flow and temperature sensors. Calculated figure of merit (rho-TCR), values for the MOD Ni-ZrO2 films Compared favorably to commercial Pt and Ni based thin and thick film formulations used for heaters and thermal sensors. An added advantage of the MOD Ni-ZrO2, compared to the non-linear behavior of Ni, was that film resistance response to temperature is highly linear over the temperature range of 20--160°C. Select films could be heated to 45--100°C with a low (I2R) power input of 400mW-2W. Then films demonstrated stable hot resistance, high sensitivity and rapid response to gas flow. Significant accomplishments from this work included the development of: (a) MOD derived cermet films of 40--78 vol.% Ni, with high positive TCR of 2600--4250ppm/°C and Rs of 2.5--60%O/□/1mum which are highly suitable for thermal sensing applications, (b) A simple mixture rule rho = rhoo - m·VNi describing the film resistivity with composition; and (c) Expressions correlating film TCR and resistance to sintering time and temperature using particle growth kinetics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alves, L. M. S., E-mail: leandro-fisico@hotmail.com; Lima, B. S. de; Santos, C. A. M. dos

K{sub 0.05}MoO{sub 2} has been studied by x-ray and neutron diffractometry, electrical resistivity, magnetization, heat capacity, and thermal expansion measurements. The compound displays two phase transitions, a first-order phase transition near room temperature and a second-order transition near 54 K. Below the transition at 54 K, a weak magnetic anomaly is observed and the electrical resistivity is well described by a power-law temperature dependence with exponent near 0.5. The phase transitions in the K-doped MoO{sub 2} compound have been discussed for the first time using neutron diffraction, high resolution thermal expansion, and heat capacity measurements as a function of temperature.

Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Niteesh Reddy, Varra; Reddy, M. Siva Pratap; Gunasekhar, K. R.; Lee, Jung-Hee

2018-04-01

This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current-voltage-temperature, turn-on voltage-temperature and series resistance-temperature in the high-temperature range of 300-420 K. It is observed that an exponential decrease in the series resistance ( R S) and increase in the ideality factor ( n) and barrier height ( ϕ b) with increase in temperature. The thermal coefficient ( K j) is determined to be - 1.3 mV K-1 at ≥ 300 K. The effective ϕ b is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature ( T 0) resulting from the Cheung's functions [d V/d(ln I) vs. I and H( I) vs. I], is seen that there is good agreement between the T 0 values from both Cheung's functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.

Carbon-Starvation Induces Cross-Resistance to Thermal, Acid, and Oxidative Stress in Serratia marcescens

PubMed Central

Pittman, Joseph R.; Kline, La’Kesha C.; Kenyon, William J.

2015-01-01

The broad host-range pathogen Serratia marcescens survives in diverse host and non-host environments, often enduring conditions in which the concentration of essential nutrients is growth-limiting. In such environments, carbon and energy source starvation (carbon-starvation) is one of the most common forms of stress encountered by S. marcescens. Related members of the family Enterobacteriaceae are known to undergo substantial changes in gene expression and physiology in response to the specific stress of carbon-starvation, enabling non-spore-forming cells to survive periods of prolonged starvation and exposure to other forms of stress (i.e., starvation-induced cross-resistance). To determine if carbon-starvation also results in elevated levels of cross-resistance in S. marcescens, both log-phase and carbon-starved cultures, depleted of glucose before the onset of high cell-density stationary-phase, were grown in minimal media at either 30 °C or 37 °C and were then challenged for resistance to high temperature (50 °C), low pH (pH 2.8), and oxidative stress (15 mM H2O2). In general, carbon-starved cells exhibited a higher level of resistance to thermal stress, acid stress, and oxidative stress compared to log-phase cells. The extent of carbon-starvation-induced cross-resistance was dependent on incubation temperature and on the particular strain of S. marcescens. In addition, strain- and temperature-dependent variations in long-term starvation survival were also observed. The enhanced stress-resistance of starved S. marcescens cells could be an important factor in their survival and persistence in many non-host environments and within certain host microenvironments where the availability of carbon sources is suboptimal for growth. PMID:27682115

YBCO microbolometer operating below Tc - A modelization based on critical current-temperature dependence

NASA Astrophysics Data System (ADS)

Robbes, D.; Langlois, P.; Dolabdjian, C.; Bloyet, D.; Hamet, J. F.; Murray, H.

1993-03-01

Using careful measurements of the I-V curve of a YBCO thin-film microbridge under light irradiation at 780 nm and temperature close to 77 K, it is shown that the critical current versus temperature dependence is a good thermometer for estimating bolometric effects in the film. A novel dynamic voltage bias is introduced which directly gives the device current responsitivity and greatly reduces risks of thermal runaway. Detectivity is very low but it is predicted that a noise equivalent temperature of less than 10 exp -7 K/sq rt Hz would be achievable in a wide temperature range (10-80 K), which is an improvement over thermometry at the resistive transition.

Degradation study of AlAs/GaAs resonant tunneling diode IV curves under influence of high temperatures

NASA Astrophysics Data System (ADS)

Makeev, M. O.; Meshkov, S. A.; Sinyakin, V. Yu

2017-11-01

In the present work the thermal degradation of IV curves of AlAs/GaAs resonant tunneling diodes using artificial aging method was investigated. The dependency of AuGeNi specific ohmic contact resistance on time and temperature was determined.

Temperature-dependent changes in erythrocytes' cytosol state during natural and artificial hypobiosis.

PubMed

Repina, S V; Nardid, O A; Marchenko, V S; Shilo, A V

2004-05-01

At present, the question of how the structural state of the erythrocyte cytosol is arranged to maintain essential permeabilities successfully both at normal temperature and during periods with a significant body temperature reduction during hypobiosis remains unanswered. In the present work, we performed comparative investigations of temperature-dependent changes in the cytosol state of erythrocytes from animals subjected to natural (winter hibernating ground squirrels) or artificial hypobiosis. The cytosol state was evaluated by the ESR method of spin probes (TEMPON) within the temperature range of 0-50 degrees C. Erythrocyte resistance to acid hemolysis, which is limited by the permeability of membranes for protons and the state of the anion channel, were determined using the method described by Terskov and Getelson [Biofizika 2 (1957) 259]. A change in cytosol microviscosity of erythrocytes was found as well as a temperature-dependent increase in acid resistance of erythrocytes. Our investigations allow us to conclude that physiological changes occurring in a mammalian organism during natural and artificial hypobiosis are accompanied by structural modifications of the erythrocyte cytosol. The temperature range where these modifications are observed (8, 15, 40 degrees C) suggests that the most probable modifying link is spectrin and/or the sites of its interaction with membrane. The interaction of cytoskeletal components with the cell membrane plays a key role in regulation of membrane permeability, suggesting an important role of this interaction in the adaptive reactions of erythrocytes.

Tuned-circuit dual-mode Johnson noise thermometers

NASA Astrophysics Data System (ADS)

Shepard, R. L.; Carroll, R. M.; Falter, D. D.; Blalock, T. V.; Roberts, M. J.

1992-02-01

Dual-mode Johnson noise and direct current (DC) resistance thermometers can be used in control systems where prompt indications of temperature changes and long-term accuracy are needed. Such a thermometer is being developed for the SP-100 space nuclear electric power system that requires temperature measurement at 1400 K in space for 10 years, of which 7 are expected to be at full reactor power. Several direct coupled and transformer coupled, tuned resistance inductance capacitance (RLC) circuits that produce a single, continuous voltage signal were evaluated for noise temperature measurement. The simple direct coupled RLC circuit selected provides a mean squared noise voltage that depends only on the capacitance used and the temperature of the sensor, and it is independent of the value of or changes in the sensor resistance. These circuits provide a noise signal with long term accuracy but require integrating noise signals for a finite length of time. The four wire resistor for the noise temperature sensor allows simultaneous DC resistance measurements to be made that provide a prompt, continuous temperature indication signal. The DC current mode is employed continuously, and a noise voltage measurement is made periodically to correct the temperature indication. The differential noise voltage preamplifier used substantially reduces electromagnetic interference (EMI) in the system. A sensor has been tested that should provide good performance (+/- 1 percent accuracy) and long-term (10 year) reliability in space environments. Accurate noise temperature measurements were made at temperatures above 1300 K, where significant insulator shunting occurs, even though shunting does affect the dc resistance measurements and makes the system more susceptible to EMI.

On the early and developed stages of surface condensation: competition mechanism between interfacial and condensate bulk thermal resistances.

PubMed

Sun, Jie; Wang, Hua Sheng

2016-10-10

We use molecular dynamics simulation to investigate the early and developed stages of surface condensation. We find that the liquid-vapor and solid-liquid interfacial thermal resistances depend on the properties of solid and fluid, which are time-independent, while the condensate bulk thermal resistance depends on the condensate thickness, which is time-dependent. There exists intrinsic competition between the interfacial and condensate bulk thermal resistances in timeline and the resultant total thermal resistance determines the condensation intensity for a given vapor-solid temperature difference. We reveal the competition mechanism that the interfacial thermal resistance dominates at the onset of condensation and holds afterwards while the condensate bulk thermal resistance gradually takes over with condensate thickness growing. The weaker the solid-liquid bonding, the later the takeover occurs. This competition mechanism suggests that only when the condensate bulk thermal resistance is reduced after it takes over the domination can the condensation be effectively intensified. We propose a unified theoretical model for the thermal resistance analysis by making dropwise condensation equivalent to filmwise condensation. We further find that near a critical point (contact angle being ca. 153°) the bulk thermal resistance has the least opportunity to take over the domination while away from it the probability increases.

On the early and developed stages of surface condensation: competition mechanism between interfacial and condensate bulk thermal resistances

PubMed Central

Sun, Jie; Wang, Hua Sheng

2016-01-01

We use molecular dynamics simulation to investigate the early and developed stages of surface condensation. We find that the liquid-vapor and solid-liquid interfacial thermal resistances depend on the properties of solid and fluid, which are time-independent, while the condensate bulk thermal resistance depends on the condensate thickness, which is time-dependent. There exists intrinsic competition between the interfacial and condensate bulk thermal resistances in timeline and the resultant total thermal resistance determines the condensation intensity for a given vapor-solid temperature difference. We reveal the competition mechanism that the interfacial thermal resistance dominates at the onset of condensation and holds afterwards while the condensate bulk thermal resistance gradually takes over with condensate thickness growing. The weaker the solid-liquid bonding, the later the takeover occurs. This competition mechanism suggests that only when the condensate bulk thermal resistance is reduced after it takes over the domination can the condensation be effectively intensified. We propose a unified theoretical model for the thermal resistance analysis by making dropwise condensation equivalent to filmwise condensation. We further find that near a critical point (contact angle being ca. 153°) the bulk thermal resistance has the least opportunity to take over the domination while away from it the probability increases. PMID:27721397

Electrothermal DC characterization of GaN on Si MOS-HEMTs

NASA Astrophysics Data System (ADS)

Rodríguez, R.; González, B.; García, J.; Núñez, A.

2017-11-01

DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 °C. Defect density, depending on gate width, and thermal resistance, depending additionally on temperature, are extracted from transfer characteristics displacement and the AC output conductance method, respectively, and modeled for numerical simulations with Atlas. The thermal conductivity degradation in thin films is also included for accurate simulation of the heating response. With an appropriate methodology, the internal model parameters for temperature dependencies have been established. The numerical simulations show a relative error lower than 4.6% overall, for drain current and channel temperature behavior, and account for the measured device temperature decrease with the channel length increase as well as with the channel width reduction, for a set bias.

Effect of oxidation on transport properties of zirconium-1% niobium alloy

NASA Astrophysics Data System (ADS)

Peletsky, V. E.; Musayeva, Z. A.

1995-11-01

The thermal conductivity and electrical resistivity of zirconium-1 wt% niobium samples were measured before and after the process of their oxidation in air. A special procedure was used to dissolve the gas and to smooth out its concentration in the alloy. The basic experiments were performed under high vacuum under steady-state temperature conditions. The temperature range was 300 1600 K. for the pure alloy and 300 1100 K for the samples containing oxygen. It was found that the thermal conductivity—oxygen concentration relation reverses its sign from negative at low and middle temperatures to positive at temperatures above 900 K. The relation between the electrical resistivity and the oxygen content does not show this feature. The Lorenz function was found to have an anomalous temperature dependence.

Electrical transport properties in Fe-Cr nanocluster-assembled granular films

NASA Astrophysics Data System (ADS)

Wang, Xiong-Zhi; Wang, Lai-Sen; Zhang, Qin-Fu; Liu, Xiang; Xie, Jia; Su, A.-Mei; Zheng, Hong-Fei; Peng, Dong-Liang

2017-09-01

The Fe100-xCrx nanocluster-assembled granular films with Cr atomic fraction (x) ranging from 0 to 100 were fabricated by using a plasma-gas-condensation cluster deposition system. The TEM characterization revealed that the uniform Fe clusters were coated with a Cr layer to form a Fe-Cr core-shell structure. Then, the as-prepared Fe100-xCrx nanoclusters were randomly assembled into a granular film in vacuum environments with increasing the deposition time. Because of the competition between interfacial resistance and shunting effect of Cr layer, the room temperature resistivity of the Fe100-xCrx nanocluster-assembled granular films first increased and then decreased with increasing the Cr atomic fraction (x), and revealed a maximum of 2 × 104 μΩ cm at x = 26 at.%. The temperature-dependent longitudinal resistivity (ρxx), magnetoresistance (MR) effect and anomalous Hall effect (AHE) of these Fe100-xCrx nanocluster-assembled granular films were also studied systematically. As the x increased from 0 to 100, the ρxx of all samples firstly decreased and then increased with increasing the measuring temperature. The dependence of ρxx on temperature could be well addressed by a mechanism incorporated for the fluctuation-induced-tunneling (FIT) conduction process and temperature-dependent scattering effect. It was found that the anomalous Hall effect (AHE) had no legible scaling relation in Fe100-xCrx nanocluster-assembled granular films. However, after deducting the contribution of tunneling effect, the scaling relation was unambiguous. Additionally, the Fe100-xCrx nanocluster-assembled granular films revealed a small negative magnetoresistance (MR), which decreased with the increase of x. The detailed physical mechanism of the electrical transport properties in these Fe100-xCrx nanocluster-assembled granular films was also studied.

Arabidopsis HSP90 protein modulates RPP4-mediated temperature-dependent cell death and defense responses.

PubMed

Bao, Fei; Huang, Xiaozhen; Zhu, Chipan; Zhang, Xiaoyan; Li, Xin; Yang, Shuhua

2014-06-01

Plant defense responses are regulated by temperature. In Arabidopsis, the chilling-sensitive mutant chs2-1 (rpp4-1d) contains a gain-of-function mutation in the TIR-NB-LRR (Toll and interleukin 1 receptor-nucleotide binding-leucine-rich repeat) gene, RPP4 (RECOGNITION OF PERONOSPORA PARASITICA 4), which leads to constitutive activation of the defense response at low temperatures. Here, we identified and characterized two suppressors of rpp4-1d from a genetic screen, hsp90.2 and hsp90.3, which carry point mutations in the cytosolic heat shock proteins HSP90.2 and HSP90.3, respectively. The hsp90 mutants suppressed the chilling sensitivity of rpp4-1d, including seedling lethality, activation of the defense responses and cell death under chilling stress. The hsp90 mutants exhibited compromised RPM1 (RESISTANCE TO PSEUDOMONAS MACULICOLA 1)-, RPS4 (RESISTANCE TO P. SYRINGAE 4)- and RPP4-mediated pathogen resistance. The wild-type RPP4 and the mutated form rpp4 could interact with HSP90 to form a protein complex. Furthermore, RPP4 and rpp4 proteins accumulated in the cytoplasm and nucleus at normal temperatures, whereas the nuclear accumulation of the mutated rpp4 was decreased at low temperatures. Genetic analysis of the intragenic suppressors of rpp4-1d revealed the important functions of the NB-ARC and LRR domains of RPP4 in temperature-dependent defense signaling. In addition, the rpp4-1d-induced chilling sensitivity was largely independent of the WRKY70 or MOS (modifier of snc1) genes. [Correction added after online publication 11 March 2013: the expansions of TIR-NB-LRR and RPS4 were amended] This study reveals that Arabidopsis HSP90 regulates RPP4-mediated temperature-dependent cell death and defense responses. © 2014 The Authors. New Phytologist © 2014 New Phytologist Trust.

Silicon solar cell development and radiation effects study for low temperature and low illumination intensity operation, volume 2

NASA Technical Reports Server (NTRS)

Kirkpatrick, A. R.

1972-01-01

The results are presented of a study to determine the effect of in-situ proton irradiation upon low temperature, low intensity performance of several cell types. The cell types were selected in an attempt to distinguish variations in temperature-dependent radiation resistance which could be attributed to the n-p or p-n structure, diffused or implanted junctions, crucible grown or float-zone type base material, and high or low base resistivity. The results indicate that while expected variations of performance occur at room temperature, all cell types degrade more or less similarly at lower temperatures with normalized degradation becoming increasingly rapid as temperature is reduced. Recommendations for an optimized cell for Jupiter probe use are included along with a definition of the testing required on these cells to insure good performance characteristics.

Magneto Transport of CVD Carbon in Artificial Opals

NASA Astrophysics Data System (ADS)

Wang, Lei; Yin, Ming; Arammash, Fauzi; Datta, Timir

2014-03-01

Magneto-transport of carbon inverse opal structures were investigated in the 2.5 to 300 K temperatures and magnetic fields in the 0-10T regime. Qualitatively, our observations lie between those reported by previous researchers. Over this temperature range, transport (in zero magnetic field) is non-metallic; the resistance decreased with rising temperature however the temperature dependent behavior is not activated, as observed with variable range hopping. In three-dimensions, such behavior can also be the result of weak localization and electron-electron interactions; in particular the change in conductivity is a polynomial in fractional powers of absolute temperature. At sub-helium temperature regimes the relative magneto resistance is measured to be ~ 0.1 percent per Tesla. Results of data analysis for several different scenarios will be reported. DOD award #60177-RT-H from the ARO.

Superconductivity and weak localization of PdxBi2Se3 whiskers at low temperatures

NASA Astrophysics Data System (ADS)

Druzhinin, Anatoly; Ostrovskii, Igor; Khoverko, Yuriy; Rogacki, Krzysztof; Liakh-Kaguy, Natalia

2018-02-01

The temperature dependencies of Bi2Se3 whiskers' resistance with Pd doping concentration of (1÷2)×1019 cm-3 where measured in the temperature range 1.5÷77 K. At temperature 5.3 K a sharp drop in the whisker resistance was found. The observed effect is likely connected with the contribution of two processes such as the electron localization and superconductivity at temperatures below 5.3 K. The magnetoresistance in the n-type conductivity Bi2Se3 whiskers with different doping concentration of palladium that correspond to metal side of the metal-insulator transition was studied at low temperatures and magnetic field 0÷10 T. The whisker magnetoconductance is considered in the framework of the weak antilocalization model and connected with subsurface layers of Bi2Se3 whiskers.

Investigations of Low Temperature Time Dependent Cracking

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van der Sluys, W A; Robitz, E S; Young, B A

2002-09-30

The objective of this project was to investigate metallurgical and mechanical phenomena associated with time dependent cracking of cold bent carbon steel piping at temperatures between 327 C and 360 C. Boiler piping failures have demonstrated that understanding the fundamental metallurgical and mechanical parameters controlling these failures is insufficient to eliminate it from the field. The results of the project consisted of the development of a testing methodology to reproduce low temperature time dependent cracking in laboratory specimens. This methodology was used to evaluate the cracking resistance of candidate heats in order to identify the factors that enhance cracking sensitivity.more » The resultant data was integrated into current available life prediction tools.« less

Investigation of TiN thin film oxidation depending on the substrate temperature at vacuum break

DOE Office of Scientific and Technical Information (OSTI.GOV)

Piallat, Fabien, E-mail: fabien.piallat@gmail.com; CEA, LETI, Campus Minatec, F-38054 Grenoble; LTM-CNRS, 17 rue des Martyrs, 38054 Grenoble

2016-09-15

Due to the reduction of the thickness of the layers used in the advanced technology nodes, there is a growing importance of the surface phenomena in the definition of the general properties of the materials. One of the least controlled and understood phenomenon is the oxidation of metals after deposition, at the vacuum break. In this study, the influence of the sample temperature at vacuum break on the oxidation level of TiN deposited by metalorganic chemical vapor deposition is investigated. TiN resistivity appears to be lower for samples which underwent vacuum break at high temperature. Using X-ray photoelectron spectrometry analysis,more » this change is correlated to the higher oxidation of the TiN layer. Moreover, angle resolved XPS analysis reveals that higher is the temperature at the vacuum break, higher is the surface oxidation of the sample. This surface oxidation is in turn limiting the diffusion of oxygen in the volume of the layer. Additionally, evolution of TiN layers resistivity was monitored in time and it shows that resistivity increases until a plateau is reached after about 10 days, with the lowest temperature at vacuum break resulting in the highest increase, i.e., the resistivity of the sample released to atmosphere at high temperature increased by a factor 1.7 whereas the resistivity of the sample cooled down under vacuum temperature increased by a factor 2.7.« less

Superconductivity in two-dimensional NbSe2 field effect transistors

NASA Astrophysics Data System (ADS)

El-Bana, Mohammed S.; Wolverson, Daniel; Russo, Saverio; Balakrishnan, Geetha; Mck Paul, Don; Bending, Simon J.

2013-12-01

We describe investigations of superconductivity in few molecular layer NbSe2 field effect transistors. While devices fabricated from NbSe2 flakes less than eight molecular layers thick did not conduct, thicker flakes were superconducting with an onset Tc that was only slightly depressed from the bulk value for 2H-NbSe2 (7.2 K). The resistance typically showed a small, sharp high temperature transition followed by one or more broader transitions which usually ended in a wide tail to zero resistance at low temperatures. We speculate that these multiple resistive transitions are related to disorder in the layer stacking. The behavior of several flakes has been characterized as a function of temperature, applied field and back-gate voltage. We find that the conductance in the normal state and transition temperature depend weakly on the gate voltage, with both conductivity and Tc decreasing as the electron concentration is increased. The application of a perpendicular magnetic field allows the evolution of different resistive transitions to be tracked and values of the zero temperature upper critical field, Hc2(0), and coherence length, ξ(0), to be independently estimated. Our results are analyzed in terms of available theories for these phenomena.

The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zha, Gangqiang; Yang, Jian; Xu, Lingyan

2014-01-28

Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance canmore » be explained using the deep trap model.« less

Superconductor-Insulator Transition in NbTiN Films

NASA Astrophysics Data System (ADS)

Burdastyh, M. V.; Postolova, S. V.; Baturina, T. I.; Proslier, T.; Vinokur, V. M.; Mironov, A. Yu.

2017-12-01

Experimental results indicating a direct disorder-induced superconductor-insulator transition in NbTiN thin films have been reported. It has been shown that an increase in the resistance per square in the normal state is accompanied by the suppression of the critical temperature of the superconducting transition T c according to the fermion mechanism of suppression of superconductivity by disorder. At the same time, the temperature of the Berezinskii-Kosterlitz-Thouless transition is completely suppressed at a nonzero critical temperature and, then, the ground state changes to insulating, which is characteristic of the boson model of suppression of superconductivity by disorder. It has been shown that the temperature dependences of the resistance of insulating films follow the Arrhenius activation law.

Ice Detection and Mitigation Device

NASA Technical Reports Server (NTRS)

Gambino, Richard J. (Inventor); Gouldstone, Christopher (Inventor); Gutleber, Jonathan (Inventor); Hubble, David (Inventor); Trelewicz, Jason (Inventor)

2016-01-01

A method for deicing an aerostructure includes driving a sensing current through a heater element coated to an aerostructure, the heater element having a resistance that is temperature dependent. A resistance of the heater element is monitored. It is determined whether there is icing at the heater element using the monitored resistance of the heater element. A melting current is driven through the heater element when it is determined that there is icing at the heater element.

Magnetic and structural properties of glass-coated Heusler-type microwires exhibiting martensitic transformation.

PubMed

Zhukov, A; Ipatov, M; Del Val, J J; Zhukova, V; Chernenko, V A

2018-01-12

We have studied magnetic and structural properties of the Heusler-type Ni-Mn-Ga glass-coated microwires prepared by Tailor-Ulitovsky technique. As-prepared sample presents magnetoresistance effect and considerable dependence of magnetization curves (particularly magnetization values) on magnetic field attributed to the magnetic and atomic disorder. Annealing strongly affects the temperature dependence of magnetization and Curie temperature of microwires. After annealing of the microwires at 973 K, the Curie temperature was enhanced to about 280 K which is beneficial for the magnetic solid state refrigeration. The observed hysteretic anomalies on the temperature dependences of resistance and magnetization in the as-prepared and annealed samples are produced by the martensitic transformation. The magnetoresistance and magnetocaloric effects have been investigated to illustrate a potential technological capability of studied microwires.

Oxidation characteristics of 440 C CRES in gaseous oxygen (GOX) environments. [Corrosion Resistant Steel

NASA Technical Reports Server (NTRS)

Dennies, Daniel P.; Parsons, Terry D.

1986-01-01

The oxidation characteristics of 440 C corrosion-resistant steel are evaluated. The dependence of oxide color, type, and thickness, material hardness, and microstructure on temperature is examined. The effects of exposure time, passivation layer, and oxygen pressure on the oxide formation are investigated. A direct relationship between temperature and oxide color, formation, and thickness is detected. It is observed that the exposure time does not affect the microstructure or oxide color, type, or thickness; however, the passivation layer does affect oxide color and type.

Processing and property evaluation of metal matrix superconducting materials

NASA Technical Reports Server (NTRS)

Rao, Appajosula S.

1995-01-01

Metal - superconductor (YBCO) systems have been prepared and characterized by resistivity, ac susceptibility and dc SQUID magnetic moment measurements. The silver composites showed superconducting transition for all the composites processed and the superconducting transition temperature tends to depend upon the concentration of the silver in the composite. Aluminum composites showed an unusual resistivity results with two transitions around 90 K and 120 K. The superconducting property of silver composites can be explained qualitatively in terms of the proximity theory that has been suggested for the low temperature superconductors.

High magnetic field behavior of NbFe2

NASA Astrophysics Data System (ADS)

Rauch, D.; Steinki, N.; Knafo, W.; Pfleiderer, C.; Duncan, W. J.; Grosche, F. M.; Süllow, S.

2018-05-01

We have carried out a high magnetic field study on single crystalline stoichiometric NbFe2, a material discussed in terms quantum criticality in itinerant ferromagnets, by means of high field resistivity experiments. Our experiments have been performed at the Laboratoire National des Champs Magnétiques Intenses in Toulouse, France. The resistivity of single crystalline NbFe2, has been investigated in external fields up to 15.5 T aligned along the c-axis in the temperature range of 1.4-55 K. The main focus of our study lies on the method to extract TN from the magnetoresistivity measurements, because TN could not be easily observed in temperature dependent resistivity for stoichiometric NbFe2.

Role of thermal resistance on the performance of superconducting radio frequency cavities

DOE PAGES

Dhakal, Pashupati; Ciovati, Gianluigi; Myneni, Ganapati Rao

2017-03-07

Thermal stability is an important parameter for the operation of the superconducting radio frequency (SRF) cavities used in particle accelerators. The rf power dissipated on the inner surface of the cavities is conducted to the helium bath cooling the outer cavity surface and the equilibrium temperature of the inner surface depends on the thermal resistance. In this manuscript, we present the results of direct measurements of thermal resistance on 1.3 GHz single cell SRF cavities made from high purity large-grain and fine-grain niobium as well as their rf performance for different treatments applied to outer cavity surface in order tomore » investigate the role of the Kapitza resistance to the overall thermal resistance and to the SRF cavity performance. The results show no significant impact of the thermal resistance to the SRF cavity performance after chemical polishing, mechanical polishing or anodization of the outer cavity surface. Temperature maps taken during the rf test show nonuniform heating of the surface at medium rf fields. Calculations of Q 0(B p) curves using the thermal feedback model show good agreement with experimental data at 2 and 1.8 K when a pair-braking term is included in the calculation of the Bardeen-Cooper-Schrieffer surface resistance. In conclusion, these results indicate local intrinsic nonlinearities of the surface resistance, rather than purely thermal effects, to be the main cause for the observed field dependence of Q 0(B p).« less

Role of thermal resistance on the performance of superconducting radio frequency cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhakal, Pashupati; Ciovati, Gianluigi; Myneni, Ganapati Rao

Thermal stability is an important parameter for the operation of the superconducting radio frequency (SRF) cavities used in particle accelerators. The rf power dissipated on the inner surface of the cavities is conducted to the helium bath cooling the outer cavity surface and the equilibrium temperature of the inner surface depends on the thermal resistance. In this manuscript, we present the results of direct measurements of thermal resistance on 1.3 GHz single cell SRF cavities made from high purity large-grain and fine-grain niobium as well as their rf performance for different treatments applied to outer cavity surface in order tomore » investigate the role of the Kapitza resistance to the overall thermal resistance and to the SRF cavity performance. The results show no significant impact of the thermal resistance to the SRF cavity performance after chemical polishing, mechanical polishing or anodization of the outer cavity surface. Temperature maps taken during the rf test show nonuniform heating of the surface at medium rf fields. Calculations of Q 0(B p) curves using the thermal feedback model show good agreement with experimental data at 2 and 1.8 K when a pair-braking term is included in the calculation of the Bardeen-Cooper-Schrieffer surface resistance. In conclusion, these results indicate local intrinsic nonlinearities of the surface resistance, rather than purely thermal effects, to be the main cause for the observed field dependence of Q 0(B p).« less

Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd x Hg1- x Te Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

NASA Astrophysics Data System (ADS)

Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Varavin, V. S.; Vasil'ev, V. V.; Dvoretskii, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Sidorov, G. Yu.

2017-06-01

In a temperature range of 9-200 K, temperature dependences of the differential resistance of space-charge region in the strong inversion mode are experimentally studied for MIS structures based on CdxHg1-xTe (x = 0.22-0.40) grown by molecular-beam epitaxy. The effect of various parameters of structures: the working layer composition, the type of a substrate, the type of insulator coating, and the presence of a near-surface graded-gap layer on the value of the product of differential resistance by the area is studied. It is shown that the values of the product RSCRA for MIS structures based on n-CdHgTe grown on a Si(013) substrate are smaller than those for structures based on the material grown on a GaAs(013) substrate. The values of the product RSCRA for MIS structures based on p-CdHgTe grown on a Si(013) substrate are comparable with the value of the analogous parameter for MIS structures based on p-CdHgTe grown on a GaAs(013) substrate.

Multiple electrical phase transitions in Al substituted barium hexaferrite

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Supriya, Sweety; Kar, Manoranjan

2017-12-01

Barium hexaferrite is known to be a very good ferromagnetic material. However, it shows very good dielectric properties, i.e., the dielectric constant is comparable to that of the ferroelectric material. However, its crystal symmetry does not allow it to be a ferroelectric material. Hence, the electrical properties have revived the considerable research interest on these materials, not only for academic interest, but also for technological applications. There are a few reports on temperature dependent dielectric behavior of these materials. However, the exact cause of dielectric as well as electrical conductivity is yet to be established. Hence, Al (very good conducting material) substituted barium hexaferrite (BaFe12-xAlxO19, x = 0.0-4.0) has been prepared by following the modified sol-gel method to understand the ac and DC electrical properties of these materials. The crystal structure and parameters have been studied by employing the XRD and FTIR techniques. There are two transition temperatures, which have been observed in the temperature dependent ac dielectric and DC resistivity measurement. The response of dielectric behaviors to temperature is similar to that of the ferroelectric material; however, the dielectric polarization is due to the polaron hopping, which is evident from the DC resistivity analysis. Hence, the present observations lead to understand the electrical properties of barium hexaferrite. The frequency dependent dielectric dispersion can be understood by the modified Debye model. More interestingly, the dielectric constant decreases and DC resistivity increases with the increase in the Al concentration, which has the correlation between bond length modifications in the crystal due to substitution.

Effect of Light and Chilling Temperatures on Chilling-sensitive and Chilling-resistant Plants. Pretreatment of Cucumber and Spinach Thylakoids in Vivo and in Vitro.

PubMed

Garber, M P

1977-05-01

The effects of chilling temperatures, in light or dark, on the isolated thylakoids and leaf discs of cucumber (Cucumis sativa L. "Marketer") and spinach (Spinacia oleracea L. "Bloomsdale") were studied. The pretreatment of isolated thylakoids and leaf discs at 4 C in the dark did not affect the phenazine methosulfate-dependent phosphorylation, proton uptake, osmotic response to sucrose, Ca(2+)-dependent ATPase activity, or chlorophyll content. Exposure of cucumber cotyledon discs and isolated thylakoids of cucumber and spinach to 4 C in light resulted in a rapid inactivation of the thylakoids. The sequence of activities or components lost during inactivation (starting with the most sensitive) are: phenazine methosulfate-dependent cyclic phosphorylation, proton uptake, osmotic response to sucrose, Ca(2+)-dependent ATPase activity, and chlorophyll. The rate of loss of proton uptake, osmotic response to sucrose, Ca(2+)-dependent ATPase activity and chlorophyll is similar for isolated cucumber and spinach thylakoids, whereas spinach thylakoids are more resistant to the loss of phenazine methosulfate-dependent phosphorylation. The thylakoids of spinach leaf discs were unaffected by exposure to 4 C in light. The results question whether the extreme resistance of spinach thylakoids treated in vivo is solely a function of the chloroplast thylakoid membranes and establish the validity of using in vitro results to make inferences about cucumber thylakoids treated in vivo at 4 C in light.

Effect of Light and Chilling Temperatures on Chilling-sensitive and Chilling-resistant Plants. Pretreatment of Cucumber and Spinach Thylakoids in Vivo and in Vitro1

PubMed Central

Garber, Melvin P.

1977-01-01

The effects of chilling temperatures, in light or dark, on the isolated thylakoids and leaf discs of cucumber (Cucumis sativa L. “Marketer”) and spinach (Spinacia oleracea L. “Bloomsdale”) were studied. The pretreatment of isolated thylakoids and leaf discs at 4 C in the dark did not affect the phenazine methosulfate-dependent phosphorylation, proton uptake, osmotic response to sucrose, Ca2+-dependent ATPase activity, or chlorophyll content. Exposure of cucumber cotyledon discs and isolated thylakoids of cucumber and spinach to 4 C in light resulted in a rapid inactivation of the thylakoids. The sequence of activities or components lost during inactivation (starting with the most sensitive) are: phenazine methosulfate-dependent cyclic phosphorylation, proton uptake, osmotic response to sucrose, Ca2+-dependent ATPase activity, and chlorophyll. The rate of loss of proton uptake, osmotic response to sucrose, Ca2+-dependent ATPase activity and chlorophyll is similar for isolated cucumber and spinach thylakoids, whereas spinach thylakoids are more resistant to the loss of phenazine methosulfate-dependent phosphorylation. The thylakoids of spinach leaf discs were unaffected by exposure to 4 C in light. The results question whether the extreme resistance of spinach thylakoids treated in vivo is solely a function of the chloroplast thylakoid membranes and establish the validity of using in vitro results to make inferences about cucumber thylakoids treated in vivo at 4 C in light. PMID:16659980

Probing the nature and resistance of the molecule-electrode contact in SAM-based junctions.

PubMed

Sangeeth, C S Suchand; Wan, Albert; Nijhuis, Christian A

2015-07-28

It is challenging to quantify the contact resistance and to determine the nature of the molecule-electrode contacts in molecular two-terminal junctions. Here we show that potentiodynamic and temperature dependent impedance measurements give insights into the nature of the SAM-electrode interface and other bottlenecks of charge transport (the capacitance of the SAM (C(SAM)) and the resistance of the SAM (R(SAM))), unlike DC methods, independently of each other. We found that the resistance of the top-electrode-SAM contact for junctions with the form of Ag(TS)-SC(n)//GaO(x)/EGaIn with n = 10, 12, 14, 16 or 18 is bias and temperature independent and hence Ohmic (non-rectifying) in nature, and is orders of magnitude smaller than R(SAM). The C(SAM) and R(SAM) are independent of the temperature, indicating that the mechanism of charge transport in these SAM-based junctions is coherent tunneling and the charge carrier trapping at the interfaces is negligible.

H-modulated microwave absorption and resistive transition in the high- Tc superconductor YBa 2Cu 3O 7

NASA Astrophysics Data System (ADS)

Buluggiu, E.; Vera, A.; Amoretti, G.

1990-11-01

The derivative microwave absorption near Tc in presence of a sufficiently high field ( H⩾1 kOe) is related to the temperature variation of resistivity. This idea, originally proposed by Kim et al. (1988), is extended to take into account the effects of the anomalous resistive tail by using the thermoactivated flux-creep model proposed by Tinkham (1988). This gives a simple explanation for some relevant features observed in the temperature behaviour of the ESR absorption, as the asymmetry of the peak at Tc, with the long tail extending toward low temperatures, and the field dependence of height and linewidth, for which the model provides H-1 and H2/3 behaviour, respectively, ESR data on YBa 2Cu 3O 7 powder are in satisfactory agreement with this picture, when the role of the intrinsic 2D-character of this compound is properly taken into account. This allows us to deduce consistent values for the parameters a‖ and a⊥ of the anisotropic resistivity.

Development of Stable, Low Resistance Solder Joints for a Space-Flight HTS Lead Assemblies

NASA Technical Reports Server (NTRS)

Canavan, Edgar R.; Chiao, Meng; Panashchenko, Lyudmyla; Sampson, Michael

2017-01-01

The solder joints in spaceflight high temperature superconductor (HTS) lead assemblies for certain astrophysics missions have strict constraints on size and power dissipation. In addition, the joints must tolerate years of storage at room temperature, many thermal cycles, and several vibration tests between their manufacture and their final operation on orbit. As reported previously, solder joints between REBCO coated conductors and normal metal traces for the Astro-H mission showed low temperature joint resistance that grew approximately as log time over the course of months. Although the assemblies worked without issue in orbit, for the upcoming X-ray Astrophysics Recovery Mission we are attempting to improve our solder process to give lower, more stable, and more consistent joint resistance. We produce numerous sample joints and measure time- and thermal cycle-dependent resistance, and characterize the joints using x-ray and other analysis tools. For a subset of the joints, we use SEMEDS to try to understand the physical and chemical processes that effect joint behavior.

Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As structures on GaAs substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru; Oveshnikov, L. N.; Lunin, R. A.

The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As quantum wells on a GaAs substrate is studied. The temperature dependences (in the temperature range of 4.2 K < T < 300 K) and field dependences (in magnetic fields as high as 6 T) of the sample resistances are measured. Anisotropy of the resistances in different crystallographic directions is detected; this anisotropy depends on the substrate orientation and construction of the metamorphic buffer layer. In addition, the Hall effect and the Shubnikov–de Haas effect aremore » studied. The Shubnikov–de Haas effect is used to determine the mobilities of electrons separately in several occupied dimensionally quantized subbands in different crystallographic directions. The calculated anisotropy of mobilities is in agreement with experimental data on the anisotropy of the resistances.« less

Identification of Mott insulators and Anderson insulators in self-assembled gold nanoparticles thin films

NASA Astrophysics Data System (ADS)

Jiang, Cheng-Wei; Ni, I.-Chih; Tzeng, Shien-Der; Wu, Cen-Shawn; Kuo, Watson

2014-05-01

How the interparticle tunnelling affects the charge conduction of self-assembled gold nanoparticles is studied by three means: tuning the tunnel barrier width by different molecule modification and by substrate bending, and tuning the barrier height by high-dose electron beam exposure. All approaches indicate that the metal-Mott insulator transition is governed predominantly by the interparticle coupling strength, which can be quantified by the room temperature sheet resistance. The Hubbard gap, following the prediction of quantum fluctuation theory, reduces to zero rapidly as the sheet resistance decreases to the quantum resistance. At very low temperature, the fate of devices near the Mott transition depends on the strength of disorder. The charge conduction is from nearest-neighbour hopping to co-tunnelling between nanoparticles in Mott insulators whereas it is from variable-range hopping through charge puddles in Anderson insulators. When the two-dimensional nanoparticle network is under a unidirectional strain, the interparticle coupling becomes anisotropic so the average sheet resistance is required to describe the charge conduction.How the interparticle tunnelling affects the charge conduction of self-assembled gold nanoparticles is studied by three means: tuning the tunnel barrier width by different molecule modification and by substrate bending, and tuning the barrier height by high-dose electron beam exposure. All approaches indicate that the metal-Mott insulator transition is governed predominantly by the interparticle coupling strength, which can be quantified by the room temperature sheet resistance. The Hubbard gap, following the prediction of quantum fluctuation theory, reduces to zero rapidly as the sheet resistance decreases to the quantum resistance. At very low temperature, the fate of devices near the Mott transition depends on the strength of disorder. The charge conduction is from nearest-neighbour hopping to co-tunnelling between nanoparticles in Mott insulators whereas it is from variable-range hopping through charge puddles in Anderson insulators. When the two-dimensional nanoparticle network is under a unidirectional strain, the interparticle coupling becomes anisotropic so the average sheet resistance is required to describe the charge conduction. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr06627d

Mild Hyperthermia Downregulates Receptor-dependent Neutrophil Function

PubMed Central

Fröhlich, Dieter; Wittmann, Sigrid; Rothe, Gregor; Sessler, Daniel I.; Vogel, Peter; Taeger, Kai

2005-01-01

Mild hypothermia impairs resistance to infection and, reportedly, impairs phagocytosis and oxidative killing of un-opsonized bacteria. We evaluated various functions at 33 to 41°C in neutrophils taken from volunteers. Adhesion on endothelial cells was determined using light microscopy. Adhesion molecules expression and receptors, phagocytosis, and release of reactive oxidants were assessed using flow cytometric assays. Adhesion protein CD11b expression on resting neutrophils was temperature independent. However, upregulation of CD11b with TNF-α was increased by hypothermia and decreased with hyperthermia. Neutrophil adhesion to either resting or activated endothelial cells was not temperature dependent. Bacterial uptake was inversely related to temperature, more so with E. coli than S. aureus. Temperature dependence of phagocytosis occurred only with opsonized bacteria. Hypothermia slightly increased N-Formyl-L-methionyl-L-leucyl-phenylalanine (FMLP) receptors on neutrophils: hyperthermia decreased expression, especially with TNF-α. FMLP-induced H2O2 production was inversely related to temperature, especially in the presence of TNF-α. Conversely, phorbol-13-myristate-12-acetate, an activator of protein kinase C, induced an extreme and homogenous release of reactive oxidants that increased with temperature. In contrast to non-receptor dependent phagocytosis and oxidative killing, several crucial receptor-dependent neutrophil activities show temperature-dependent regulation, with hypothermia increasing function. The temperature dependence of neutrophil function is thus more complicated than previously appreciated. PMID:15281545

Low temperature structural and transport studies of La{sub 0.175}Pr{sub 0.45}Ca{sub 0.375}MnO{sub 3-δ}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Shivani; Shahee, Aga; Singh, Kiran

2016-05-23

The temperature (T) dependent x-ray diffraction (XRD) and resistivity measurements of La{sub 0.175}Pr{sub 0.45}Ca{sub 0.375}MnO{sub 3-δ} (LPCMO) have been performed down to 2 K to understand the structural and transport properties. From room temperature down to 220 K, LPCMO exists in orthorhombic phase with Pnma structure and at T~220 K, it transforms to charge ordered (CO) monoclinic phase with P2{sub 1}/m structure and remains as it is down to 2 K. The CO phase is evident from the occurrence of weak but well defined superlattice peaks in the XRD pattern. This structural transformation is of first order in nature asmore » evident from the phase coexistence across the transition region. These results thus clearly illustrate that LPCMO undergoes a first order structural phase transition from charge disordered orthorhombic phase to CO monoclinic phase at ~220 K, consistent with temperature dependent resistivity results. Our structural analysis of T dependent XRD data using Rietveld refinement infers that below 220 K, LPCMO forms commensurate CO monoclinic P2{sub 1}/m structure with four times structural modulation.« less

Prominent metallic surface conduction and the singular magnetic response of topological Dirac fermion in three-dimensional topological insulator Bi1.5Sb0.5Te1.7Se1.3.

PubMed

Dutta, Prithwish; Pariari, Arnab; Mandal, Prabhat

2017-07-07

We report semiconductor to metal-like crossover in the temperature dependence of resistivity (ρ) due to the switching of charge transport from bulk to surface channel in three-dimensional topological insulator Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 . Unlike earlier studies, a much sharper drop in ρ(T) is observed below the crossover temperature due to the dominant surface conduction. Remarkably, the resistivity of the conducting surface channel follows a rarely observable T 2 dependence at low temperature, as predicted theoretically for a two-dimensional Fermi liquid system. The field dependence of magnetization shows a cusp-like paramagnetic peak in the susceptibility (χ) at zero field over the diamagnetic background. The peak is found to be robust against temperature and χ decays linearly with the field from its zero-field value. This unique behavior of the χ is associated with the spin-momentum locked topological surface state in Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 . The reconstruction of the surface state with time is clearly reflected through the reduction of the peak height with the age of the sample.

Anderson localization in Nb/Al superconducting bilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greco, M.; Lacquaniti, V.; Maggi, S.

2000-01-01

The authors have measured the temperature dependence of resistivity in relatively thick Nb/Al bilayers fabricated at room temperature, observing the decrease of {rho} for increasing T typical of Anderson localization in disordered systems. The authors report the experimental conditions which determine this behavior and compare it to theoretical models for localization in 3D systems.

Deposition of Nanostructured CdS Thin Films by Thermal Evaporation Method: Effect of Substrate Temperature

PubMed Central

Memarian, Nafiseh; Rozati, Seyeed Mohammad; Concina, Isabella

2017-01-01

Nanocrystalline CdS thin films were grown on glass substrates by a thermal evaporation method in a vacuum of about 2 × 10−5 Torr at substrate temperatures ranging between 25 °C and 250 °C. The physical properties of the layers were analyzed by transmittance spectra, XRD, SEM, and four-point probe measurements, and exhibited strong dependence on substrate temperature. The XRD patterns of the films indicated the presence of single-phase hexagonal CdS with (002) orientation. The structural parameters of CdS thin films (namely crystallite size, number of grains per unit area, dislocation density and the strain of the deposited films) were also calculated. The resistivity of the as-deposited films were found to vary in the range 3.11–2.2 × 104 Ω·cm, depending on the substrate temperature. The low resistivity with reasonable transmittance suggest that this is a reliable way to fine-tune the functional properties of CdS films according to the specific application. PMID:28773133

Calculation of the Thermal Resistance of a Heat Distributer in the Cooling System of a Heat-Loaded Element

NASA Astrophysics Data System (ADS)

Vasil'ev, E. N.

2018-04-01

Numerical simulation is performed for heat transfer in a heat distributer of a thermoelectric cooling system, which is located between the heat-loaded element and the thermoelectric module, for matching their sizes and for heat flux equalization. The dependences of the characteristic values of temperature and thermal resistance of the copper and aluminum heat distributer on its thickness and on the size of the heatloaded element. Comparative analysis is carried out for determining the effect of the thermal conductivity of the material and geometrical parameters on the heat resistance. The optimal thickness of the heat distributer depending on the size of the heat-loaded element is determined.

Concentration Dependent Electrical Transport Properties of Ni-Cr Binary Alloys

NASA Astrophysics Data System (ADS)

Suthar, P. H.; Khambholja, S. G.; Thakore, B. Y.; Gajjar, P. N.; Jani, A. R.

2011-07-01

The concentration dependent electrical transport properties viz. electrical resistivity and thermal conductivity of liquid Ni-Cr alloys are computed at 1400 K temperature. The electrical resistivity has been studied according to Faber-Ziman model in wide range of Cr concentration. In the present work, the electron-ion interaction is incorporated through our well tested local model potential with screening function due to Sarkar et al.. [S] along with the Hartree [H] dielectric function. Good agreement is achieved between the presently calculated results of resistivity as well as thermal conductivity with the experimental data found in the literature, confirming the applicability of model potential and Faber-Ziman model for such a study.

Hall mobility and photoconductivity in TlGaSeS crystals

NASA Astrophysics Data System (ADS)

Qasrawi, A. F.; Gasanly, N. M.

2013-01-01

In this work, the fundamental properties of the TlGaSeS single crystals are investigated by means of temperature dependent electrical resistivity and Hall mobility. The crystal photo-responsibility as function of illumination intensity and temperature is also tested in the temperature range of 350-160 K. The study allowed the determination of acceptor centers as 230 and 450 meV below and above 260 K, and recombination centers as 181, 363, and 10 meV at low, moderate, and high temperatures, respectively. While the temperature-dependent Hall mobility behaved abnormally, the photoconductivity analysis reflected an illumination intensity dependent recombination center. Namely, the recombination center increased from 10 to 90 meV as the light intensity increased from 27.9 to 76.7 mW cm-2, respectively. That strange behavior was attributed to the temporary shift in Fermi level caused by photoexcitation.

Magnetoresistance behavior in nanobulk assembled Bi2Se3 topological insulator

NASA Astrophysics Data System (ADS)

Bera, Sumit; Behera, P.; Mishra, A. K.; Krishnan, M.; Patidar, Manju Mishra; Singh, Durgesh; Venkatesh, R.; Phase, D. M.; Ganesan, V.

2018-05-01

Temperature and magnetic field dependent magnetoresistance (MR) including structural, morphological studies of Bi2Se3 nanoflower like structure synthesized by microwave assisted solvothermal method has been investigated. Powder X-ray diffraction (XRD) has confirmed the formation of single phase. Morphology of the material shows nanoflower kind of structures with edge to edge size of around 4 µm and such occurrences are quite high. The temperature dependent resistance invokes a metallic behavior up to a certain lower temperature, below which it follows -ln(T) behavior that has been elucidated in literature using electron-electron interaction and weak anti-localization effects. High temperature magnetoresistance is consistent with parabolic field dependence indicating a classical magnetoresistance in metals as a result of Lorenz force. In low temperature regime magnetoresistance as a function of magnetic field at different temperatures obeys power law near low field which indicates a three dimensional weak-antilocalization. A linear magnetoresistance at low temperature and high magnetic field shows the domination of surface state conduction.

Extremely large magnetoresistance in the topologically trivial semimetal α -WP2

NASA Astrophysics Data System (ADS)

Du, Jianhua; Lou, Zhefeng; Zhang, ShengNan; Zhou, Yuxing; Xu, Binjie; Chen, Qin; Tang, Yanqing; Chen, Shuijin; Chen, Huancheng; Zhu, Qinqing; Wang, Hangdong; Yang, Jinhu; Wu, QuanSheng; Yazyev, Oleg V.; Fang, Minghu

2018-06-01

Extremely large magnetoresistance (XMR) was recently discovered in many nonmagnetic materials, while its underlying mechanism remains poorly understood due to the complex electronic structure of these materials. Here we report an investigation of the α -phase WP2, a topologically trivial semimetal with monoclinic crystal structure (C 2 /m ), which contrasts with the recently discovered robust type-II Weyl semimetal phase in β -WP2 . We found that α -WP2 exhibits almost all the characteristics of XMR materials: the near-quadratic field dependence of MR, a field-induced up-turn in resistivity followed by a plateau at low temperature, which can be understood by the compensation effect, and high mobility of carriers confirmed by our Hall effect measurements. It was also found that the normalized MRs under different magnetic fields have the same temperature dependence in α -WP2 , the Kohler scaling law can describe the MR data in a wide temperature range, and there is no obvious change in the anisotropic parameter γ value with temperature. The resistance polar diagram has a peanut shape when the field is rotated in the a c plane, which can be understood by the anisotropy of the Fermi surface. These results indicate that both field-induced-gap and temperature-induced Lifshitz transition are not the origin of up-turn in resistivity in the α -WP2 semimetal. Our findings establish α -WP2 as a new reference material for exploring the XMR phenomena.

Long-Term Cr Poisoning Effect on LSCF-GDC Composite Cathodes Sintered at Different Temperatures

DOE PAGES

Xiong, Chunyan; Taillon, Joshua A.; Pellegrinelli, Christopher; ...

2016-07-19

Here, the impact of sintering temperature on Cr-poisoning of solid oxide fuel cell (SOFC) cathodes was systematically studied. La 0.6Sr 0.4Fe 0.8Co 0.2O 3-δ - Ce 0.9Gd 0.1O 2-δ symmetric cells were aged at 750°C in synthetic air with the presence of Crofer 22 APU, a common high temperature interconnect, over 200 hours and electrochemical impedance spectroscopy (EIS) was used to determine the degradation process. Both the ohmic resistance (R Ω) and polarization resistance (R P) of LSCF-GDC cells, extracted from EIS spectra, for different sintering temperatures increase as a function of aging time. Furthermore, the Cr-related degradation rate increasesmore » with decreased cathode sintering temperature. The polarization resistance of cathode sintered at lower temperature (950°C) increases dramatically while aging with the presence of Cr and also significantly decreases the oxygen partial pressure dependence after aging. The degradation rate shows a positive correlation to the concentration of Cr. The results indicate that decreased sintering temperature increases the total surface area, leading to more available sites for Sr-Cr-O nucleation and thus greater Cr degradation.« less

Temperature dependent fabrication of cost-effective and nontoxic Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films for solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Digraskar, Renuka, E-mail: renukad120@gmail.com; Sathe, Bhaskar, E-mail: bhaskarsathe@gmail.com; Gattu, Ketan

2016-05-06

In the present work, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been fabricated onto the glass substrate by simple and economic chemical bath deposition technique{sup 1}, and the effect of deposition temperature is reported. The deposition temperatures used were 50°C and 60°C for a deposition time of 60 min, which are significantly lower than earlier reports. These CZTS thin films were characterized for optical, electrical, morphological and elemental properties using, UV-Vis spectrophotometer, I-V system for photosensitivity, two probe resistivity system for resistivity, scanning electron microscopy, energy dispersive spectroscopy and Raman spectroscopy.

Non-Fermi Liquid Behavior and Continuously Tunable Resistivity Exponents in the Anderson-Hubbard Model at Finite Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, Niravkumar D.; Mukherjee, Anamitra; Kaushal, Nitin

Here, we employ a recently developed computational many-body technique to study for the first time the half-filled Anderson-Hubbard model at finite temperature and arbitrary correlation U and disorder V strengths. Interestingly, the narrow zero temperature metallic range induced by disorder from the Mott insulator expands with increasing temperature in a manner resembling a quantum critical point. Our study of the resistivity temperature scaling T α for this metal reveals non-Fermi liquid characteristics. Moreover, a continuous dependence of α on U and V from linear to nearly quadratic is observed. We argue that these exotic results arise from a systematic changemore » with U and V of the “effective” disorder, a combination of quenched disorder and intrinsic localized spins.« less

Simulating soybean canopy temperature as affected by weather variables and soil water potential

NASA Technical Reports Server (NTRS)

Choudhury, B. J.

1982-01-01

Hourly weather data for several clear sky days during summer at Phoenix and Baltimore which covered a wide range of variables were used with a plant atmosphere model to simulate soybean (Glycine max L.) leaf water potential, stomatal resistance and canopy temperature at various soil water potentials. The air and dew point temperatures were found to be the significant weather variables affecting the canopy temperatures. Under identical weather conditions, the model gives a lower canopy temperature for a soybean crop with a higher rooting density. A knowledge of crop rooting density, in addition to air and dew point temperatures is needed in interpreting infrared radiometric observations for soil water status. The observed dependence of stomatal resistance on the vapor pressure deficit and soil water potential is fairly well represented. Analysis of the simulated leaf water potentials indicates overestimation, possibly due to differences in the cultivars.

Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

NASA Astrophysics Data System (ADS)

Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

2017-12-01

A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

Extrinsic origins of the apparent relaxorlike behavior in CaCu3Ti4O12 ceramics at high temperatures: A cautionary tale

NASA Astrophysics Data System (ADS)

Li, Ming; Sinclair, Derek C.; West, Anthony R.

2011-04-01

Although the origins of the high effective permittivity observed in CaCu3Ti4O12 (CCTO) ceramics and single crystals at ˜100-400 K have been resolved, the relaxorlike temperature- and frequency-dependence of permittivity obtained from fixed frequency capacitance measurements at higher temperatures reported in the literature remains unexplained, especially as CCTO adopts a centrosymmetric cubic crystal structure in the range of ˜35-1273 K. Impedance spectroscopy studies reveal that this type of relaxorlike behavior is an artifact induced mainly by a nonohmic sample-electrode contact impedance. In addition, an instrument-related parasitic series inductance and resistance effect modifies the measured capacitance values as the sample resistance decreases with increasing temperature. This can lead to an underestimation of the sample capacitance and, in extreme cases, to so-called `negative capacitance.' Such a relaxorlike artifact and negative capacitance behavior are not unique to CCTO and may be expected in other leaky dielectrics whose resistance is low.

Experimental investigation of the temperature dependence of polycrystalline ice strength and resistance to low-velocity impacts with application to Titan

NASA Astrophysics Data System (ADS)

Polito, P. J.; Litwin, K.; Zygielbaum, B. R.; Sklar, L. S.; Collins, G. C.

2009-12-01

Images from Cassini and Huygens reveal widespread fluvial dissection of Titan’s surface, where incision by low-velocity impacts of bedload sediments may be a dominant mechanism, much like fluvial systems on Earth. Models of fluvial erosion dynamics on Titan are currently limited by a lack of data on ice resistance to abrasive wear at ultra-low temperatures. Using the theoretical framework of a terrestrial bedrock incision model, we seek to quantify the temperature dependence of the abrasion resistance of ice. We use the saltation-abrasion model to calculate a non-dimensional abrasion resistance coefficient, kv=2ɛvE/σt2, where ɛv is the impact kinetic energy to detach a unit volume of material, E is the elastic modulus, and σt is the tensile strength. Here we present results of a laboratory investigation of the tensile strength and erodibility of polycrystalline water-ice at temperatures ranging from 270 K down to 135 K. We make ice samples by grinding small amounts clear ice in a snow-cone machine, pack the seed grains into a modified 55-gallon drum, and add near-freezing distilled water to make a large cylindrical block. We placed ice samples in an insulated box in a walk-in freezer. We chilled the samples with a combination of dry ice and liquid nitrogen to achieve a wide range of experimental conditions and eroded the samples by dropping limestone and ice clasts from 10 cm above, 500 drops per trial. We measured the volume of ice eroded using a topographic laser-scanning system. By taking a series of obliquely oriented photographs of a laser line shining on the ice surface, we created a topographic map. Subtracting subsequent scans, we were able to quantify volumetric changes between scans. We eroded two ice samples (A and B) at varying temperatures and calculated the temperature dependence of the kinetic energy required to detach a unit volume of ice (ɛv). We measured tensile strength (σt) using the Brazil tensile splitting method at temperatures ranging from 100-270 K. We find that ice undergoes chill-strengthening—colder ice requires more impact kinetic energy to detach a unit volume of material. Sample A was significantly less erodible than sample B, which we attribute to differences in density (sample B ice was less dense than A). The temperature dependence of ɛv for samples A and B are ɛv=2.2x108T-1.6 kJ/m3 and ɛv=6.3x107T-1.6 kJ/m3 respectively, where T is temperature. The temperature dependence of tensile strength for ice is σt=3x104T-1.9 MPa and we estimate σtkv≈2x103 and scales as T2, significantly lower than terrestrial bedrock, which is kv≈106. Our results suggest that ice on Titan’s surface is significantly more erodible than terrestrial bedrock of comparable tensile strength.

Low resistivity W{sub x}V{sub 1−x}O{sub 2}-based multilayer structure with high temperature coefficient of resistance for microbolometer applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Émond, Nicolas; Hendaoui, Ali; Chaker, Mohamed, E-mail: chaker@emt.inrs.ca

2015-10-05

Materials that exhibit semiconductor-to-metal phase transition (SMT) are commonly used as sensing layers for the fabrication of uncooled microbolometers. The development of highly responsive microbolometers would benefit from using a sensing material that possesses a large thermal coefficient of resistance (TCR) close to room temperature and a resistivity low enough to compromise between noise reduction and high TCR, while it should also satisfies the requirements of current CMOS technology. Moreover, a TCR that remains constant when the IR camera surrounding temperature varies would contribute to achieve reliable temperature measurements without additional corrections steps for TCR temperature dependence. In this paper,more » the characteristics of the SMT occurring in undoped and tungsten-doped vanadium dioxide thin films deposited on LaAlO{sub 3} (100) substrates are investigated. They are further exploited to fabricate a W{sub x}V{sub 1−x}O{sub 2} (0 ≤ x ≤ 2.5) multilayer structure exhibiting a bottom-up gradient of tungsten content. This MLS displays a combination of properties that is promising for application to uncooled microbolometer, such as a large TCR of −10.4%/ °C and low resistivity values ranging from 0.012 to 0.10 Ω-cm over the temperature range 22 °C–42 °C.« less

Characterizing the temperature dependence of electronic packaging-material properties

NASA Astrophysics Data System (ADS)

Fu, Chia-Yu; Ume, Charles

1995-06-01

A computer-controlled, temperature-dependent material characterization system has been developed for thermal deformation analysis in electronic packaging applications, especially for printed wiring assembly warpage study. For fiberglass-reinforced epoxy (FR-4 type) material, the Young's moduli decrease to as low as 20-30% of the room-temperature values, while the shear moduli decrease to as low as 60-70% of the room-temperature values. The electrical resistance strain gage technique was used in this research. The test results produced overestimated values in property measurements, and this was shown in a case study. A noncontact strau]n measurement technique (laser extensometer) is now being used to measure these properties. Discrepancies of finite-element warpage predictions using different property values increase as the temperature increases from the stress-free temperature.

Origin of negative resistivity slope in U-based ferromagnets

NASA Astrophysics Data System (ADS)

Havela, L.; Paukov, M.; Buturlim, V.; Tkach, I.; Mašková, S.; Dopita, M.

2018-05-01

Ultra-nanocrystalline UH3-based ferromagnets with TC ≈ 200 K exhibit a flat temperature dependence of electrical resistivity with a negative slope both in the ferromagnetic and paramagnetic range. The ordered state with randomness on atomic scale, equivalent to a non-collinear ferromagnetism, can be affected by magnetic field, supressing the static magnetic disorder, which reduces the resistivity and removes the negative slope. It is deduced that the dynamic magnetic disorder in the paramagnetic state can be conceived as continuation of the static disorder in the ordered state. The experiments, performed for (UH3)0.78Mo0.12Ti0.10, demonstrate that the negative resistivity slope, observed for numerous U-based intermetallics in the paramagnetic state, can be due to the strong disorder effect on resistivity. The resulting weak localization, as a quantum interference effect which increases resistivity, is gradually suppressed by enhanced temperature, contributing by electron-phonon scattering, inelastic in nature and removing the quantum coherence.

Fully Electrical Modeling of Thermoelectric Generators with Contact Thermal Resistance Under Different Operating Conditions

NASA Astrophysics Data System (ADS)

Siouane, Saima; Jovanović, Slaviša; Poure, Philippe

2017-01-01

The Seebeck effect is used in thermoelectric generators (TEGs) to supply electronic circuits by converting the waste thermal into electrical energy. This generated electrical power is directly proportional to the temperature difference between the TEG module's hot and cold sides. Depending on the applications, TEGs can be used either under constant temperature gradient between heat reservoirs or constant heat flow conditions. Moreover, the generated electrical power of a TEG depends not only on these operating conditions, but also on the contact thermal resistance. The influence of the contact thermal resistance on the generated electrical power have already been extensively reported in the literature. However, as reported in Park et al. (Energy Convers Manag 86:233, 2014) and Montecucco and Knox (IEEE Trans Power Electron 30:828, 2015), while designing TEG-powered circuit and systems, a TEG module is mostly modeled with a Thévenin equivalent circuit whose resistance is constant and voltage proportional to the temperature gradient applied to the TEG's terminals. This widely used simplified electrical TEG model is inaccurate and not suitable under constant heat flow conditions or when the contact thermal resistance is considered. Moreover, it does not provide realistic behaviour corresponding to the physical phenomena taking place in a TEG. Therefore, from the circuit designer's point of view, faithful and fully electrical TEG models under different operating conditions are needed. Such models are mainly necessary to design and evaluate the power conditioning electronic stages and the maximum power point tracking algorithms of a TEG power supply. In this study, these fully electrical models with the contact thermal resistance taken into account are presented and the analytical expressions of the Thévenin equivalent circuit parameters are provided.

Observation of room temperature negative differential resistance in multi-layer heterostructures of quantum dots and conducting polymers.

PubMed

Kannan, V; Kim, M R; Chae, Y S; Ramana, Ch V V; Rhee, J K

2011-01-14

Multi-layer heterostructure negative differential resistance devices based on poly-[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEH-PPV) conducting polymer and CdSe quantum dots is reported. The conducting polymer MEH-PPV acts as a barrier while CdSe quantum dots form the well layer. The devices exhibit negative differential resistance (NDR) at low voltages. For these devices, strong negative differential resistance is observed at room temperature. A maximum value of 51 for the peak-to-valley ratio of current is reported. Tunneling of electrons through the discrete quantum confined states in the CdSe quantum dots is believed to be responsible for the multiple peaks observed in the I-V measurement. Depending on the observed NDR signature, operating mechanisms are explored based on resonant tunneling and Coulomb blockade effects.

Electrical resistivity of V-Cr-Ti alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zinkle, S.J.; Gubbi, A.N.; Eatherly, W.S.

1997-04-01

Room temperature electrical resistivity measurements have been performed on vanadium alloys containing 3-6%Cr and 3-6%Ti in order to evaluate the microstructural stability of these alloys. A nonlinear dependence on Cr and Ti concentration was observed, which suggests that either short range ordering or solute precipitation (perhaps in concert with interstitial solute clustering) has occurred in V-6Cr-6Ti.

Temperature dependence of annealing on the contact resistance of MoS2 with graphene electrodes observed

NASA Astrophysics Data System (ADS)

Lu, Qin; Fang, Cizhe; Liu, Yan; Shao, Yao; Han, Genquan; Zhang, Jincheng; Hao, Yue

2018-04-01

Two-dimensional (2D) materials are promising candidates for atomically thin nanoelectronics. Among them, MoS2 has attracted considerable attention in the nanoscience and nanotechnology community owing to its unique characteristics including high electron mobility and intrinsic band gap. In this study, we experimentally explored the contact resistances of MoS2 films based on much layered graphene films as electrodes using the circular transmission line model (CTLM). The variation in the chemical composition of the material is thoroughly analyzed by Raman and X-ray photoelectric spectroscopy (XPS) measurements. Experimental results demonstrate that annealing followed by oxygen plasma treatment can effectively improve the contact resistance. Furthermore, the current-voltage curves measured after different annealing temperatures indicate good linear characteristics, which means a marked improvement in electrical property. Calculations show that a relatively low contact resistance of ˜4.177 kΩ (ignoring its size) without back gate voltage in a single-layer graphene/MoS2 structure at an optimal annealing temperature of 500 °C is achieved. This work about the effect of annealing temperature on contact resistance can also be employed for other 2D materials, which lays a foundation for further development of novel 2D material devices.

Noncontact technique for measuring the electrical resistivity and magnetic susceptibility of electrostatically levitated materials

NASA Astrophysics Data System (ADS)

Rustan, G. E.; Spyrison, N. S.; Kreyssig, A.; Prozorov, R.; Goldman, A. I.

2012-10-01

We describe the development of a new method for measuring the electrical resistivity and magnetic susceptibility of high temperature liquids and solids. The technique combines a tunnel diode oscillator with an electrostatic levitation furnace to perform noncontact measurements on spherical samples 2-3 mm in diameter. The tank circuit of the oscillator is inductively coupled to the sample, and measurements of the oscillator frequency as a function of sample temperature can be translated into changes in the sample's electrical resistivity and magnetic susceptibility. Particular emphasis is given on the need to improve the positional stability of the levitated samples, as well as the need to stabilize the temperature of the measurement coil. To demonstrate the validity of the technique, measurements have been performed on solid spheres of pure zirconium and low-carbon steel. In the case of zirconium, while absolute values of the resistivity were not determined, the temperature dependence of the resistivity was measured over the range of 640-1770 K and found to be in good agreement with literature data. In the case of low-carbon steel, the ferromagnetic-paramagnetic transition was clearly observable and, when combined with thermal data, appears to occur simultaneously with the solid-solid structural transition.

Electrical properties of granite with implications for the lower crust.

USGS Publications Warehouse

Olhoeft, G.R.

1981-01-01

The electrical properties of granite appear to be dominantly controlled by the amount of free water in the granite and by temperature. Minor contributions to the electrical properties are provided by hydrostatic and lithostatic pressure, structurally bound water, oxygen fugacity, and other parameters. The effect of sulphur fugacity may be important but is experimentally unconfirmed. In addition to changing the magnitude of electrical properties, the amount and chemistry of water in granite significantly changes the temperature dependence of the electrical properties. With increasing temperature, changes in water content retain large, but lessened, effects on electrical properties. Near room temperature, a monolayer of water will decrease the electrical resistivity by an order of magnitude. Several weight-percent water may decrease the electrical resistivity by as much as nine orders of magnitude and decrease the thermal activation energy by a factor of five. At elevated temperatures just below granitic melting, a few weight-percent water may still decrease the resistivity by as much as 3 orders of magnitude and the activation energy by a factor of two.-Author

Self-Healable and Cold-Resistant Supercapacitor Based on a Multifunctional Hydrogel Electrolyte.

PubMed

Tao, Feng; Qin, Liming; Wang, Zhikui; Pan, Qinmin

2017-05-10

Excellent self-healability and cold resistance are attractive properties for a portable/wearable energy-storage device. However, achieving the features is fundamentally dependent on an intrinsically self-healable electrolyte with high ionic conduction at low temperature. Here we report such a hydrogel electrolyte comprising sodium alginate cross-linked by dynamic catechol-borate ester bonding. Since its dynamically cross-linked alginate network can tolerate high-content inorganic salts, the electrolyte possesses excellent healing efficiency/cyclability but also high ionic conduction at both room temperature and low temperature. A supercapacitor with the multifunctional hydrogel electrolyte completely restores its capacitive properties even after breaking/healing for 10 cycles without external stimulus. At a low temperature of -10 °C, the capacitor is even able to maintain at least 80% of its room-temperature capacitance. Our investigations offer a strategy to assemble self-healable and cold-resistant energy storage devices by using a multifunctional hydrogel electrolyte with rationally designed polymeric networks, which has potential application in portable/wearable electronics, intelligent apparel or flexible robot, and so on.

Conjugated polymer/graphene oxide nanocomposite as thermistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, Girish M., E-mail: varadgm@gmail.com; Deshmukh, Kalim

2015-06-24

We demonstrated the synthesis and measurement of temperature dependent electrical resistivity of graphene oxide (GO) reinforced poly (3, 4 - ethylenedioxythiophene) - tetramethacrylate (PEDOTTMA)/Polymethylmethacrylate (PMMA) based nanocomposites. Negative temperature coefficient (NTC) was observed for 0.5, 1 % GO loading and the positive temperature coefficient (PTC) was observed for 1.5 and 2 % Go loading in the temperature (40 to 120 °C). The GO inducted nanocomposite perform as an excellent thermistor and suitable for electronic and sensor domain.

Synthesis and electrical properties of (Pb,Co)Sr2(Y,Ca)Cu2Oz

NASA Astrophysics Data System (ADS)

Tashiro, T.; Maeda, T.; Abe, R.; Takechi, S.; Takahashi, T.; Haruta, M.; Horii, S.

One of related materials to high-temperature superconductors (HTSC's) with nominal compositions of (Pb0.5Co0.5)Sr2(Y1xCax)Cu2Oz (x=0∼0.6) is synthesized and characterized. All samples are nearly single-phase, and its crystal structure is likely to be so-called "1-2-1-2" type which is one of typical structures of HTSC's. Electrical resistivity is decreased as x increases. While superconductivity is not observed at temperatures between room-temperature and 20 K for all samples, temperature dependence of the resistivity exhibits metallic behavior down to 150 K for x=0.5. Phase formation and transport behavior are discussed focusing on mixed valence-state of Co2+ and Co3+.

Electrophysical Properties of Onion-Like Carbon

NASA Astrophysics Data System (ADS)

Tkachev, E. N.; Romanenko, A. I.; Zhdanov, K. R.; Anikeeva, O. B.; Buryakov, T. I.; Kuznetsov, V. L.; Moseenkov, S. I.

2016-06-01

The paper examines electrophysical properties of onion-like carbon (OLC) samples, where particles have the average size of 4-8 nm and are formed by 5-10 nested fullerene-like spheres connected by 1-3 common curved graphene shells into aggregates with a size of 50-300 nm. We measured the temperature dependence of electrical resistance from 4.2 to 300 K and dependence of magnetoresistance in magnetic fields up to 6 T at the temperature of 4.2 K. Temperature dependences of electrical resistance of samples can be described within the framework of the Mott law with variable hop length for the one-dimensional case or within the framework of the Efros-Shklovskii Coulomb gap. We observed the quadratically increasing positive magnetoresistance up to 6 T associated with compression of wave functions of conduction electrons. Negative magnetoresistance was observed in the range of magnetic fields up to 1-2 T in the case of some samples. This is due to the fact that magnetic field suppresses the contributions to magnetoresistance made by interference effects in the area of hopping conductivity. The measurements were used to estimate the localization radius that is comparable to the diameter of OLC particles (nano-onions).

Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1985-01-01

n/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1985-01-01

The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

Three-Dimensional Non-Fermi-Liquid Behavior from One-Dimensional Quantum Critical Local Moments

NASA Astrophysics Data System (ADS)

Classen, Laura; Zaliznyak, Igor; Tsvelik, Alexei M.

2018-04-01

We study the temperature dependence of the electrical resistivity in a system composed of critical spin chains interacting with three-dimensional conduction electrons and driven to criticality via an external magnetic field. The relevant experimental system is Yb2 Pt2 Pb , a metal where itinerant electrons coexist with localized moments of Yb ions which can be described in terms of effective S =1 /2 spins with a dominantly one-dimensional exchange interaction. The spin subsystem becomes critical in a relatively weak magnetic field, where it behaves like a Luttinger liquid. We theoretically examine a Kondo lattice with different effective space dimensionalities of the two interacting subsystems. We characterize the corresponding non-Fermi liquid behavior due to the spin criticality by calculating the electronic relaxation rate and the dc resistivity and establish its quasilinear temperature dependence.

Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

NASA Astrophysics Data System (ADS)

Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

2018-05-01

Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Birkett, Martin; Penlington, Roger

2016-07-01

We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10-1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10-25 nm the electrical resistivity is found to be a function of the film surface roughness and is well described by Namba’s model. For thicknesses of 25-40 nm the experimental data was most accurately fitted using the Mayadas and Shatkes model which accounts for grain boundary scattering of the conduction electrons. Beyond 40 nm, the thickness of the film was found to be the controlling factor and the Fuchs-Sonheimer (FS) model was used to fit the experimental data, with diffuse scattering of the conduction electrons at the two film surfaces. By combining the Fuchs and Namba (FN) models a suitable correlation between theoretical and experimental resistivity can be achieved across the full CuAlMo film thickness range of 10-1000 nm. The irreversibility of resistance for films of thickness >200 nm, which demonstrated bulk conductivity, was measured to be less than 0.03% following subjection to temperature cycles of -55 and +125 °C and the temperature co-efficient of resistance was less than ±15 ppm °C-1.

Correlation between the transport mechanisms in conductive filaments inside Ta2O5-based resistive switching devices and in substoichiometric TaOx thin films

NASA Astrophysics Data System (ADS)

Rosário, Carlos M. M.; Thöner, Bo; Schönhals, Alexander; Menzel, Stephan; Wuttig, Matthias; Waser, Rainer; Sobolev, Nikolai A.; Wouters, Dirk J.

2018-05-01

Conductive filaments play a key role in redox-based resistive random access memory (ReRAM) devices based on the valence change mechanism, where the change of the resistance is ascribed to the modulation of the oxygen content in a local region of these conductive filaments. However, a deep understanding of the filaments' composition and structure is still a matter of debate. We approached the problem by comparing the electronic transport, at temperatures from 300 K down to 2 K, in the filaments and in TaOx films exhibiting a substoichiometric oxygen content. The filaments were created in Ta (15 nm)/Ta2O5 (5 nm)/Pt crossbar ReRAM structures. In the TaOx thin films with various oxygen contents, the in-plane transport was studied. There is a close similarity between the electrical properties of the conductive filaments in the ReRAM devices and of the TaOx films with x ˜ 1, evidencing also no dimensionality difference for the electrical transport. More specifically, for both systems there are two different conduction processes: one in the higher temperature range (from 50 K up to ˜300 K), where the conductivity follows a √{ T } dependence, and one at lower temperatures (<50 K), where the conductivity follows the exp(-1 / √{ T } ) dependence. This suggests a strong similarity between the material composition and structure of the filaments and those of the substoichiometric TaOx films. We also discuss the temperature dependence of the conductivity in the framework of possible transport mechanisms, mainly of those normally observed for granular metals.

Negative Magnetoresistance in Amorphous Indium Oxide Wires

PubMed Central

Mitra, Sreemanta; Tewari, Girish C; Mahalu, Diana; Shahar, Dan

2016-01-01

We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions. PMID:27876859

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiong, L. H.; Wang, X. D.; Yu, Q.

Temperature-dependent atomistic structure evolution of liquid gallium (Ga) has been investigated by using in situ high energy X-ray diffraction experiment and ab initio molecular dynamics simulation. Both experimental and theoretical results reveal the existence of a liquid structural change around 1000 K in liquid Ga. Below and above this temperature the liquid exhibits differences in activation energy for selfdiffusion, temperature-dependent heat capacity, coordination numbers, density, viscosity, electric resistivity and thermoelectric power, which are reflected from structural changes of the bond-orientational order parameter Q6, fraction of covalent dimers, averaged string length and local atomic packing. This finding will trigger more studiesmore » on the liquid-to-liquid crossover in metallic melts.« less

Transport properties of the Ce xY 1-x Pt alloy system: Unusual concenration dependence of the Curie temperature

DOE PAGES

Očko, M.; Zadro, K.; Drobac, Đ.; ...

2016-11-16

Here, in order to study Kondo ferromagnetism of CePt, we have investigated the transport properties, resistivity and thermopower, of the Ce xY 1-xPt alloy system from 2 K to 320 K. The extracted magnetic contribution to the total resistivity cannot be scaled to the concentration and is much higher than in the Ce xLa 1-xPt alloy system. The maximum of the magnetic contribution of the resistivity moves to lower temperatures with decreasing the Ce content while the temperature of the minimum of the thermopower does not change with concentration. These two facts seem to be in contradiction. Usually one assumesmore » that these extrema represent the Kondo temperature. To the contrary, we show that the Kondo temperature increases with decreasing Ce content. The most intriguing observation in this alloy system is the linear relationship between the Curie temperature and the concentration of the Ce ions and, moreover, that it is the same as in Ce xLa 1-xPt. Lastly, this fact is in contradiction with the conventional picture of small moment Kondo magnetism.« less

A setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials

NASA Astrophysics Data System (ADS)

Fu, Qiang; Xiong, Yucheng; Zhang, Wenhua; Xu, Dongyan

2017-09-01

This paper presents a setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials. The sample holder was designed to have a compact structure and can be directly mounted in a standard cryostat system for temperature-dependent measurements. For the Seebeck coefficient measurement, a thin bar-shaped sample is mounted bridging two copper bases; and two ceramic heaters are used to generate a temperature gradient along the sample. Two type T thermocouples are used to determine both temperature and voltage differences between two widely separated points on the sample. The thermocouple junction is flattened into a disk and pressed onto the sample surface by using a spring load. The flexible fixation method we adopted not only simplifies the sample mounting process but also prevents thermal contact deterioration due to the mismatch of thermal expansion coefficients between the sample and other parts. With certain modifications, the sample holder can also be used for four-probe electrical resistivity measurements. High temperature measurements are essential for thermoelectric power generation. The experimental system we developed is capable of measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials in a wide temperature range from 80 to 500 K, which can be further extended to even higher temperatures. Measurements on two standard materials, constantan and nickel, confirmed the accuracy and the reliability of the system.

Tailorable Burning Behavior of Ti14 Alloy by Controlling Semi-Solid Forging Temperature.

PubMed

Chen, Yongnan; Yang, Wenqing; Zhan, Haifei; Zhang, Fengying; Huo, Yazhou; Zhao, Yongqing; Song, Xuding; Gu, Yuantong

2016-08-16

Semi-solid processing (SSP) is a popular near-net-shape forming technology for metals, while its application is still limited in titanium alloy mainly due to its low formability. Recent works showed that SSP could effectively enhance the formability and mechanical properties of titanium alloys. The processing parameters such as temperature and forging rate/ratio, are directly correlated with the microstructure, which endow the alloy with different chemical and physical properties. Specifically, as a key structural material for the advanced aero-engine, the burn resistant performance is a crucial requirement for the burn resistant titanium alloy. Thus, this work aims to assess the burning behavior of Ti14, a kind of burn resistant alloy, as forged at different semi-solid forging temperatures. The burning characteristics of the alloy are analyzed by a series of burning tests with different burning durations, velocities, and microstructures of burned sample. The results showed that the burning process is highly dependent on the forging temperature, due to the fact that higher temperatures would result in more Ti₂Cu precipitate within grain and along grain boundaries. Such a microstructure hinders the transport of oxygen in the stable burning stage through the formation of a kind of oxygen isolation Cu-enriched layer under the burn product zone. This work suggests that the burning resistance of the alloy can be effectively tuned by controlling the temperature during the semi-solid forging process.

Thin films of topological Kondo insulator candidate SmB6: Strong spin-orbit torque without exclusive surface conduction

PubMed Central

Li, Yufan; Ma, Qinli; Huang, S. X.; Chien, C. L.

2018-01-01

The advent of topological insulators (TIs), a novel class of materials that harbor a metallic spin-chiral surface state coexisting with band-insulating bulk, opens up new possibilities for spintronics. One promising route is current-induced switching of an adjacent magnetic layer via spin-orbit torque (SOT), arising from the large spin-orbit coupling intrinsically possessed by TIs. The Kondo insulator SmB6 has been recently proposed to be a strongly correlated TI, supported by the observation of a metallic surface state in bulk SmB6, as evidenced by the thickness independence of the low-temperature resistance plateau. We report the synthesis of epitaxial (001) SmB6/Si thin films and a systematic thickness-dependent electrical transport study. Although the low-temperature resistance plateau is observed for all films from 50 to 500 nm in thickness, the resistance is distinctively thickness-dependent and does not support the notion of surface conduction and interior insulation. On the other hand, we demonstrate that SmB6 can generate a large SOT to switch an adjacent ferromagnetic layer, even at room temperature. The effective SOT generated from SmB6 is comparable to that from β-W, one of the strongest SOT materials. PMID:29376125

Extremely correlated Fermi liquid theory of the t-J model in 2 dimensions: low energy properties

NASA Astrophysics Data System (ADS)

Shastry, B. Sriram; Mai, Peizhi

2018-01-01

Low energy properties of the metallic state of the two-dimensional t-J model are presented for second neighbor hopping with hole-doping (t\\prime ≤slant 0) and electron-doping (t\\prime > 0), with various superexchange energy J. We use a closed set of equations for the Greens functions obtained from the extremely correlated Fermi liquid theory. These equations reproduce the known low energies features of the large U Hubbard model in infinite dimensions. The density and temperature dependent quasiparticle weight, decay rate and the peak spectral heights over the Brillouin zone are calculated. We also calculate the resistivity, Hall conductivity, Hall number and cotangent Hall angle. The spectral features display high thermal sensitivity at modest T for density n≳ 0.8, implying a suppression of the effective Fermi-liquid temperature by two orders of magnitude relative to the bare bandwidth. The cotangent Hall angle exhibits a T 2 behavior at low T, followed by an interesting kink at higher T. The Hall number exhibits strong renormalization due to correlations. Flipping the sign of t\\prime changes the curvature of the resistivity versus T curves between convex and concave. Our results provide a natural route for understanding the observed difference in the temperature dependent resistivity of strongly correlated electron-doped and hole-doped matter.

Electrical resistivity of La

DOE Office of Scientific and Technical Information (OSTI.GOV)

Legvold, S.; Burgardt, P.; Beaudry, B.J.

1977-09-15

The electrical resistivity of high-purity double hexagonal-close-packed (dhcp) ..cap alpha..-La from 5 to 300 K is reported. Measurements were made on small-grained samples prepared by heat treatment of cold-worked lanthanum. Measurements were also made on samples cut in different directions from an ingot slowly cooled from the molten state. The room-temperature results were all within 2% of the mean value. Chemically pure ..beta..-La (fcc) cannot be retained at room temperature, hence, measurements were made on an fcc sample of La containing 0.2-at. % Gd and approx. 0.8-at. % total interstitial nonmetallic impurities. The cubic form has almost the same typemore » of temperature dependence as the dhcp form, but has a 10% lower magnitude.« less

Resistivity in the Vicinity of a van Hove Singularity: Sr2RuO4 under Uniaxial Pressure

NASA Astrophysics Data System (ADS)

Barber, M. E.; Gibbs, A. S.; Maeno, Y.; Mackenzie, A. P.; Hicks, C. W.

2018-02-01

We report the results of a combined study of the normal-state resistivity and superconducting transition temperature Tc of the unconventional superconductor Sr2 RuO4 under uniaxial pressure. There is strong evidence that, as well as driving Tc through a maximum at ˜3.5 K , compressive strains ɛ of nearly 1% along the crystallographic [100] axis drive the γ Fermi surface sheet through a van Hove singularity, changing the temperature dependence of the resistivity from T2 above, and below the transition region to T1.5 within it. This occurs in extremely pure single-crystals in which the impurity contribution to the resistivity is <100 n Ω cm , so our study also highlights the potential of uniaxial pressure as a more general probe of this class of physics in clean systems.

Contact-metal dependent current injection in pentacene thin-film transistors

NASA Astrophysics Data System (ADS)

Wang, S. D.; Minari, T.; Miyadera, T.; Tsukagoshi, K.; Aoyagi, Y.

2007-11-01

Contact-metal dependent current injection in top-contact pentacene thin-film transistors is analyzed, and the local mobility in the contact region was found to follow the Meyer-Neldel rule. An exponential trap distribution, rather than the metal/organic hole injection barrier, is proposed to be the dominant factor of the contact resistance in pentacene thin-film transistors. The variable temperature measurements revealed a much narrower trap distribution in the copper contact compared with the corresponding gold contact, and this is the origin of the smaller contact resistance for copper despite a lower work function.

Interactions of cortisol, testosterone, and resistance training: influence of circadian rhythms.

PubMed

Hayes, Lawrence D; Bickerstaff, Gordon F; Baker, Julien S

2010-06-01

Diurnal variation of sports performance usually peaks in the late afternoon, coinciding with increased body temperature. This circadian pattern of performance may be explained by the effect of increased core temperature on peripheral mechanisms, as neural drive does not appear to exhibit nycthemeral variation. This typical diurnal regularity has been reported in a variety of physical activities spanning the energy systems, from Adenosine triphosphate-phosphocreatine (ATP-PC) to anaerobic and aerobic metabolism, and is evident across all muscle contractions (eccentric, isometric, concentric) in a large number of muscle groups. Increased nerve conduction velocity, joint suppleness, increased muscular blood flow, improvements of glycogenolysis and glycolysis, increased environmental temperature, and preferential meteorological conditions may all contribute to diurnal variation in physical performance. However, the diurnal variation in strength performance can be blunted by a repeated-morning resistance training protocol. Optimal adaptations to resistance training (muscle hypertrophy and strength increases) also seem to occur in the late afternoon, which is interesting, since cortisol and, particularly, testosterone (T) concentrations are higher in the morning. T has repeatedly been linked with resistance training adaptation, and higher concentrations appear preferential. This has been determined by suppression of endogenous production and exogenous supplementation. However, the cortisol (C)/T ratio may indicate the catabolic/anabolic environment of an organism due to their roles in protein degradation and protein synthesis, respectively. The morning elevated T level (seen as beneficial to achieve muscle hypertrophy) may be counteracted by the morning elevated C level and, therefore, protein degradation. Although T levels are higher in the morning, an increased resistance exercise-induced T response has been found in the late afternoon, suggesting greater responsiveness of the hypothalamo-pituitary-testicular axis then. Individual responsiveness has also been observed, with some participants experiencing greater hypertrophy and strength increases in response to strength protocols, whereas others respond preferentially to power, hypertrophy, or strength endurance protocols dependent on which protocol elicited the greatest T response. It appears that physical performance is dependent on a number of endogenous time-dependent factors, which may be masked or confounded by exogenous circadian factors. Strength performance without time-of-day-specific training seems to elicit the typical diurnal pattern, as does resistance training adaptations. The implications for this are (a) athletes are advised to coincide training times with performance times, and (b) individuals may experience greater hypertrophy and strength gains when resistance training protocols are designed dependent on individual T response.

A temperature compensation methodology for piezoelectric based sensor devices

NASA Astrophysics Data System (ADS)

Wang, Dong F.; Lou, Xueqiao; Bao, Aijian; Yang, Xu; Zhao, Ji

2017-08-01

A temperature compensation methodology comprising a negative temperature coefficient thermistor with the temperature characteristics of a piezoelectric material is proposed to improve the measurement accuracy of piezoelectric sensing based devices. The piezoelectric disk is characterized by using a disk-shaped structure and is also used to verify the effectiveness of the proposed compensation method. The measured output voltage shows a nearly linear relationship with respect to the applied pressure by introducing the proposed temperature compensation method in a temperature range of 25-65 °C. As a result, the maximum measurement accuracy is observed to be improved by 40%, and the higher the temperature, the more effective the method. The effective temperature range of the proposed method is theoretically analyzed by introducing the constant coefficient of the thermistor (B), the resistance of initial temperature (R0), and the paralleled resistance (Rx). The proposed methodology can not only eliminate the influence of piezoelectric temperature dependent characteristics on the sensing accuracy but also decrease the power consumption of piezoelectric sensing based devices by the simplified sensing structure.

Effect of neodymium substitution on the electric and dielectric properties of Mn-Ni-Zn ferrite

NASA Astrophysics Data System (ADS)

Agami, W. R.

2018-04-01

Ferrite samples of Mn0.5Ni0.1Zn0.4NdxFe2-xO4 (x = 0.0, 0.01, 0.02, 0.05, 0.075 and 0.1) have been prepared by usual ceramic method. The temperature and composition dependences of the dc electric resistivity (ρdc) were studied. The frequency and composition dependences of the ac electric resistivity (ρac) and dielectric parameters (dielectric constant ε' and dielectric loss ε'') have been investigated. ρdc was found to decrease with temperature for all samples while it increases with increasing Nd3+ concentration. On the other hand, ρac and the dielectric properties were found to decrease with increasing the frequency while ρac increases and both ε' and ε'' decrease with increasing Nd3+ concentration. These results were explained by the Maxwell-Wagner two-layer model and Koops's theory. The improvement in dc and ac electric resistivities shows that these prepared materials are valid for decreasing the eddy current losses at high frequencies, so they can be used in the fabrication of multilayer chip inductor (MLCI) devices.

Temperature measurement systems in wearable electronics

NASA Astrophysics Data System (ADS)

Walczak, S.; Gołebiowski, J.

2014-08-01

The aim of this paper is to present the concept of temperature measurement system, adapted to wearable electronics applications. Temperature is one of the most commonly monitored factor in smart textiles, especially in sportswear, medical and rescue products. Depending on the application, measured temperature could be used as an initial value of alert, heating, lifesaving or analysis system. The concept of the temperature measurement multi-point system, which consists of flexible screen-printed resistive sensors, placed on the T-shirt connected with the central unit and the power supply is elaborated in the paper.

Variable electronic stripe structures of the parent iron-chalcogenide superconductor Fe1 +dTe observed by STM-STS

NASA Astrophysics Data System (ADS)

Sugimoto, Akira; Ekino, Toshikazu; Gabovich, Alexander M.

2014-12-01

Nanoscale stripe structures of the parent iron-11 superconductor Fe1.033Te were investigated using low-temperature scanning tunnel microscopy-scanning tunnel spectroscopy (STM-STS). STM topographies and d I /d V maps show clear stripe structures with the bias-dependent multiple periods 2 ×a0 and a0, where a0 is the lattice constant ˜0.38 nm. The form of the stripe structures seen on d I /d V maps strongly depends on the bias voltage. Varying stripe structures are apparently driven by magnetic order appearing below the transition temperature Ts˜72 K, that is defined by the noticeable drop in the temperature dependence of resistivity, and are strongly influenced by the underlying excess Fe.

Relaxation processes and conduction mechanism in bismuth ferrite lead titanate composites

NASA Astrophysics Data System (ADS)

Sahu, Truptimayee; Behera, Banarji

2018-02-01

In this study, samarium (Sm)-doped multiferroic composites of 0.8BiSmxFe1-xO3-0.2PbTiO3 where x = 0.05, 0.10, 0.15, and 0.20 were prepared via the conventional solid state reaction route. The electrical properties of these composites were analyzed using an impedance analyzer over a wide range of temperatures and frequencies (102-106 Hz). The impedance and modulus analyses confirmed the presence of both bulk and grain boundary effects in the materials. The temperature dependence of impedance and modulus spectrum indicated the negative temperature coefficient of resistance behavior. The dielectric relaxation exhibited non-Debye type behavior and it was temperature dependent. The relaxation time (τ) and DC conductivity followed an Arrhenius type behavior. The frequency-dependent AC conductivity obeyed Jonscher's power law. The correlated barrier hopping model was appropriate to understand the conduction mechanism in the composites considered.

Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

NASA Astrophysics Data System (ADS)

Mahato, Somnath; Puigdollers, Joaquim

2018-02-01

Temperature dependent current-voltage (I‒V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and silicon. The basic Schottky diode parameters such as ideality factor (n), barrier height (ϕb 0) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory. It has been found that ideality factor decreased and barrier height increased with increased of temperature. The conventional Richardson plot of ln(I0/T2) vs. 1000/T is determined the activation energy (Ea) and Richardson constant (A*). Whereas value of 'A*' is much smaller than the known theoretical value of n-type Si. The temperature dependent I-V characteristics obtained the mean value of barrier height (ϕb 0 bar) and standard deviation (σs) from the linear plot of ϕap vs. 1000/T. From the modified Richardson plot of ln(I0/T2) ˗ (qσ)2/2(kT)2 vs. 1000/T gives Richardson constant and homogeneous barrier height of Schottky diodes. Main observation in this present work is the barrier height and ideality factor shows a considerable change but the series resistance value exhibits negligible change due to TMO as an interface layer.

Structural, optical and high pressure electrical resistivity studies of pure NiO and Cu-doped NiO nanoparticles

NASA Astrophysics Data System (ADS)

Marselin, M. Abila; Jaya, N. Victor

2016-04-01

In this paper, pure NiO and Cu-doped NiO nanoparticles are prepared by co-precipitation method. The electrical resistivity measurements by applying high pressure on pure NiO and Cu-doped NiO nanoparticles were reported. The Bridgman anvil set up is used to measure high pressures up to 8 GPa. These measurements show that there is no phase transformation in the samples till the high pressure is reached. The samples show a rapid decrease in electrical resistivity up to 5 GPa and it remains constant beyond 5 GPa. The electrical resistivity and the transport activation energy of the samples under high pressure up to 8 GPa have been studied in the temperature range of 273-433 K using diamond anvil cell. The temperature versus electrical resistivity studies reveal that the samples behave like a semiconductor. The activation energies of the charge carriers depend on the size of the samples.

Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities.

PubMed

Lin, Yen-Fu; Chang, Chia-Hung; Hung, Tsu-Chang; Jian, Wen-Bin; Tsukagoshi, Kazuhito; Wu, Yue-Han; Chang, Li; Liu, Zhaoping; Fang, Jiye

2015-08-11

To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott's variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics.

Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities

PubMed Central

Lin, Yen-Fu; Chang, Chia-Hung; Hung, Tsu-Chang; Jian, Wen-Bin; Tsukagoshi, Kazuhito; Wu, Yue-Han; Chang, Li; Liu, Zhaoping; Fang, Jiye

2015-01-01

To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott’s variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics. PMID:26260674

Processing study of high temperature superconducting Y-Ba-Cu-O ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Safari, A.; Wachtman, J.B. Jr.; Ward, C.

Processing of the YBa{sub 2}Cu{sub 3}O{sub 6+x} superconducting phase by employing different precursor powder preparation techniques (ball milling, attrition milling) and samples formed by different sintering conditions are discussed. The superconducting phase has been identified by powder x-ray diffraction. The effect of different powder processing and pressing conditions on the structure, density, resistivity and a.c. magnetic susceptibility were studied. Though there is no variation in T{sub c} for all the samples, attrition milled samples show a much lower resistance and less temperature dependence compared to ball milled samples above the superconducting transition temperature up to room temperature. Ball milled samplesmore » were loosely packed with more voids compared to attrition milled samples which are more densely packed with a needle-like structure.« less

Highlights from two years of geoelectrical monitoring of permafrost at the Magnetköpfl/Kitzsteinhorn

NASA Astrophysics Data System (ADS)

Jochum, Birgit; Ottowitz, David; Pfeiler, Stefan; Supper, Robert; Keuschnig, Markus; Hartmeyer, Ingo; Kim, Jung-Ho

2014-05-01

Changes of climate parameters due to global warming generate increased permafrost warming and deglaciation in alpine regions. The area of interest is the Magnetköpfl, a peak below the Kitzsteinhorn (3203 m), where scientists observe increasing rock instability due to the probable degradation of permafrost and the rapid lowering of the glacier surfaces adjacent to the rock faces (loss of natural abutment, exposure of rock to atmospheric influences). Geoelectric measurements are an adequate method to measure permafrost, since the underground electric resistivity is highly dependent on temperature and the amount of unfrozen pore water. In October 2011 a geoelectrical monitoring profile with the GEOMON4D was installed on the north facing ridge of the Magnetköpfl. Measurements of soil temperature on the profile support the interpretation of geoelectric data. Maximum active layer depth at the Magnetköpfl is approximately 3 m. Seasonal variations of ground temperature can be observed up to a depth of 8-10 m below surface. The two year period of data collection allows us to analyse time series of average apparent resistivities compared with the climatic seasons. It can be seen that different temperature periods have a direct correlation to average apparent resistivity. Inversion results of geoelectrical monitoring data are derived from an innovative 4D resistivity inversion approach (Kim et al, 2013). In three selected events (thawing and freezing in spring, thawing in summer, freezing in fall) difference images of the 4D inversion show the depth range of the temperature influence. The temperature sensors at the profile only reach 0.8 m below ground level.The geoelectrical monitoring data is able to deliver far more (thermal) information than single point temperature measurements since the underground electric resistivity is highly dependent on temperature. The geoelectrical monitoring is supported by the project "TEMPEL", funded by the Federal Ministry for Transport, Innovation & Technology (BMVIT) and the Austrian Science Fund (FWF): TRP 175-N21 and internal funds of the Geological Survey of Austria. The recording of the ground temperature is conducted within MOREXPERT administered by alpS - Centre for Climate Change Adaptation and the University of Salzburg. Kim J.-H., Supper R., Tsourlos P. and Yi M.-J. 2013. Four-dimensional inversion of resistivity monitoring data through Lp norm minimizations. Geophysical Journal International, 2013-11-21 Supper R., Ottowitz D., Jochum B., Römer A., Pfeiler S., Kauer S., Keuschnig M. and Ita A. Geoelectrical monitoring of frozen ground and permafrost in alpine areas: field studies and considerations towards an improved measuring technology. Near Surface Geophysics, 2014, 12, 93-115

Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

PubMed Central

Gonnelli, R. S.; Paolucci, F.; Piatti, E.; Sharda, Kanudha; Sola, A.; Tortello, M.; Nair, Jijeesh R.; Gerbaldi, C.; Bruna, M.; Borini, S.

2015-01-01

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different temperatures and in view of the theoretically predicted possibility to reach the superconducting state in such extreme conditions. Here we present the results obtained in 3-, 4- and 5-layer graphene devices down to 3.5 K, where a large surface charge density up to about 6.8·1014 cm−2 has been reached by employing a novel polymer electrolyte solution for the electrochemical gating. In contrast with recent results obtained in single-layer graphene, the temperature dependence of the sheet resistance between 20 K and 280 K shows a low-temperature dominance of a T2 component – that can be associated with electron-electron scattering – and, at about 100 K, a crossover to the classic electron-phonon regime. Unexpectedly, this crossover does not show any dependence on the induced charge density, i.e. on the large tuning of the Fermi energy. PMID:25906088

Selection for longevity confers resistance to low-temperature stress in Drosophila melanogaster.

PubMed

Luckinbill, L S

1998-03-01

One theory of the evolution of longevity says that improvement in life span is dependent on an increased ability to resist environmental stresses of all kind. Selective breeding of Drosophila melanogaster populations for longevity has demonstrably increased life span and also altered a number of other traits, such as resistance to starvation, desiccation, and ethanol fumes, and the ability to sustain longer flight. While the exact physiologic basis of some of these traits is not yet fully understood, at least some are known to derive from the properties of metabolic substrates of glycolysis. Improvement in those characters can depend partially, therefore, on altered stores of metabolites created from glycogen. Based on the known general relationship of some traits and the suspected basis in metabolism of others, we examine the possibility here that increased life span is accompanied by other traits that also confer physiologic resistance to stress. Specifically, we test the prediction that long-lived populations of fruit flies should be more resistant to low (prefreezing) and freezing temperature extremes. Both selected and control populations were found to be susceptible to prefreezing (1.5 degrees C) and freezing temperatures (0 degree C) here, but adults and pupae of the long-lived populations generally survived better in both situations, and at all durations of exposure. The resistance of individuals improved with acclimatization, but was superior in the long-lived populations whether thermal decline was rapid or stepwise. Cold resistant, long-lived populations also had significantly higher in vitro levels of glycerol, a cryoprotectant metabolite produced from glycogen. However, while adults and pupae of long-lived stocks were more resistant to cold, larvae of those stocks were more sensitive and survived relatively poorly at every length of exposure and acclimation. This surprising result implies that larvae maintain lower levels of cryoprotectant substances. Upon becoming pupae, however, stage-specific capabilities for environmental resistance and long life emerge. This conclusion agrees with a prior study of these stocks indicating that the uptake and use of nutrients in developing larvae are restricted in long-lived populations.

Characterization of Alq3 thin films by a near-field microwave microprobe.

PubMed

Hovsepyan, Artur; Lee, Huneung; Sargsyan, Tigran; Melikyan, Harutyun; Yoon, Youngwoon; Babajanyan, Arsen; Friedman, Barry; Lee, Kiejin

2008-09-01

We observed tris-8-hydroxyquinoline aluminum (Alq3) thin films dependence on substrate heating temperatures by using a near-field microwave microprobe (NFMM) and by optical absorption at wavelengths between 200 and 900 nm. The changes of absorption intensity at different substrate heating temperatures are correlated to the changes in the sheet resistance of Alq3 thin films.

Fabrication and Characterization of Novel Refractory Coatings Using Combinatorial Nanocalorimetry

DTIC Science & Technology

2015-07-21

The report summarizes the results of solid-state reaction in Zr /B and Zr /B4C multilayers, oxidation of ZrB2, the effect of Nb and C doping on the...oxidation resistance of the coatings at temperatures below 1000 K, but the temperature-dependence of the diffusion rate constant suggests that Nb ...28 B4. Zr -B- Nb oxidation

Magnetotransport parameters of La0.67Ca0.33MnO3 films grown on neodymium gallate substrates

NASA Astrophysics Data System (ADS)

Boikov, Yu. A.; Volkov, M. P.

2013-01-01

Weakly mechanically stressed 40-nm-thick La0.67Ca0.33MnO3 films have been grown coherently on a (001)NdGaO3 substrate by laser evaporation. The electrical resistivity ρ of the La0.67Ca0.33MnO3 film reaches a maximum at a temperature T C ≈ 255 K. At temperatures below 0.6 T C, the temperature dependences of ρ are well approximated by the relation ρ = ρdef + C 1 T 2 + C 2 T 4.5, in which the first term on the right-hand side accounts for the contribution of structural defects to electrical resistivity, and the second and third terms stand for those of the electron-electron and electron-magnon interactions, respectively. The parameters ρdef ≈ 1 x 10-4 Ω cm and C 1 ≈ 7.7 × 10-9 Ω cm K-2 do not depend on temperature and magnetic field H. The coefficient C 2 decreases with increasing H to reach about 4.9 × 10-15 Ω cm K-4.5 at μ0 H = 14 T.

Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb 1-xSn xTe

DOE PAGES

Zhong, Ruidan; He, Xugang; Schneeloch, J. A.; ...

2015-05-29

Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentum-locked gapless surface states. Experimentally, it has proven difficult to achieve the high bulk resistivity that would allow surface states to dominate the transport properties over a substantial temperature range. Here we report a series of indium-doped Pb 1-xSn xTe compounds that manifest huge bulk resistivities together with evidence consistent with the topological character of the surface states for x ≳ 0.35, based on thickness-dependent transport studies and magnetoresistance measurements. For these bulk-insulating materials, the surface states determinemore » the resistivity for temperatures beyond 20 K.« less

Three-Dimensional Non-Fermi-Liquid Behavior from One-Dimensional Quantum Critical Local Moments

DOE PAGES

Classen, Laura; Zaliznyak, Igor; Tsvelik, Alexei M.

2018-04-10

We study the temperature dependence of the electrical resistivity in a system composed of critical spin chains interacting with three dimensional conduction electrons and driven to criticality via an external magnetic field. The relevant experimental system is Yb 2Pt 2Pb, a metal where itinerant electrons coexist with localized moments of Yb-ions which can be described in terms of effective S = 1/2 spins with dominantly one-dimensional exchange interaction. The spin subsystem becomes critical in a relatively weak magnetic field, where it behaves like a Luttinger liquid. We theoretically examine a Kondo lattice with different effective space dimensionalities of the twomore » interacting subsystems. Lastly, we characterize the corresponding non-Fermi liquid behavior due to the spin criticality by calculating the electronic relaxation rate and the dc resistivity and establish its quasi linear temperature dependence.« less

Three-Dimensional Non-Fermi-Liquid Behavior from One-Dimensional Quantum Critical Local Moments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Classen, Laura; Zaliznyak, Igor; Tsvelik, Alexei M.

We study the temperature dependence of the electrical resistivity in a system composed of critical spin chains interacting with three dimensional conduction electrons and driven to criticality via an external magnetic field. The relevant experimental system is Yb 2Pt 2Pb, a metal where itinerant electrons coexist with localized moments of Yb-ions which can be described in terms of effective S = 1/2 spins with dominantly one-dimensional exchange interaction. The spin subsystem becomes critical in a relatively weak magnetic field, where it behaves like a Luttinger liquid. We theoretically examine a Kondo lattice with different effective space dimensionalities of the twomore » interacting subsystems. Lastly, we characterize the corresponding non-Fermi liquid behavior due to the spin criticality by calculating the electronic relaxation rate and the dc resistivity and establish its quasi linear temperature dependence.« less

Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

NASA Astrophysics Data System (ADS)

Jehl, Zacharie; Suchet, Daniel; Julian, Anatole; Bernard, Cyril; Miyashita, Naoya; Gibelli, Francois; Okada, Yoshitaka; Guillemolles, Jean-Francois

2017-02-01

Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

Properties of vapor detector arrays formed through plasticization of carbon black-organic polymer composites.

PubMed

Koscho, Michael E; Grubbs, Robert H; Lewis, Nathan S

2002-03-15

Arrays of vapor detectors have been formed through addition of varying mass fractions of the plasticizer diethylene glycol dibenzoate to carbon black-polymer composites of poly(vinyl acetate) (PVAc) or of poly(N-vinylpyrrolidone). Addition of plasticizer in 5% mass fraction increments produced 20 compositionally different detectors from each polymer composite. Differences in vapor sorption and permeability that effected changes in the dc electrical resistance response of these compositionally different detectors allowed identification and classification of various test analytes using standard chemometric methods. Glass transition temperatures, Tg, were measured using differential scanning calorimetry for plasticized polymers having a mass fraction of 0, 0.10, 0.20, 0.30, 0.40, or 0.50 of plasticizer in the composite. The plasticized PVAc composites with Tg < 25 degrees C showed rapid responses at room temperature to all of the test analyte vapors studied in this work, whereas composites with Tg > 25 degrees C showed response times that were highly dependent on the polymer/analyte combination. These composites showed a discontinuity in the temperature dependence of their resistance, and this discontinuity provided a simple method for determining the Tg of the composite and for determining the temperature or plasticizer mass fraction above which rapid resistance responses could be obtained for all members of the test set of analyte vapors. The plasticization approach provides a method for achieving rapid detector response times as well as for producing a large number of chemically different vapor detectors from a limited number of initial chemical feedstocks.

Temperature Sensitivity Conferred by ligA Alleles from Psychrophilic Bacteria upon Substitution in Mesophilic Bacteria and a Yeast Species

PubMed Central

Pankowski, Jarosław A.; Puckett, Stephanie M.

2016-01-01

We have assembled a collection of 13 psychrophilic ligA alleles that can serve as genetic elements for engineering mesophiles to a temperature-sensitive (TS) phenotype. When these ligA alleles were substituted into Francisella novicida, they conferred a TS phenotype with restrictive temperatures between 33 and 39°C. When the F. novicida ligA hybrid strains were plated above their restrictive temperatures, eight of them generated temperature-resistant variants. For two alleles, the mutations that led to temperature resistance clustered near the 5′ end of the gene, and the mutations increased the predicted strength of the ribosome binding site at least 3-fold. Four F. novicida ligA hybrid strains generated no temperature-resistant variants at a detectable level. These results suggest that multiple mutations are needed to create temperature-resistant variants of these ligA gene products. One ligA allele was isolated from a Colwellia species that has a maximal growth temperature of 12°C, and this allele supported growth of F. novicida only as a hybrid between the psychrophilic and the F. novicida ligA genes. However, the full psychrophilic gene alone supported the growth of Salmonella enterica, imparting a restrictive temperature of 27°C. We also tested two ligA alleles from two Pseudoalteromonas strains for their ability to support the viability of a Saccharomyces cerevisiae strain that lacked its essential gene, CDC9, encoding an ATP-dependent DNA ligase. In both cases, the psychrophilic bacterial alleles supported yeast viability and their expression generated TS phenotypes. This collection of ligA alleles should be useful in engineering bacteria, and possibly eukaryotic microbes, to predictable TS phenotypes. PMID:26773080

Surface impedance and optimum surface resistance of a superconductor with an imperfect surface

NASA Astrophysics Data System (ADS)

Gurevich, Alex; Kubo, Takayuki

2017-11-01

We calculate a low-frequency surface impedance of a dirty, s -wave superconductor with an imperfect surface incorporating either a thin layer with a reduced pairing constant or a thin, proximity-coupled normal layer. Such structures model realistic surfaces of superconducting materials which can contain oxide layers, absorbed impurities, or nonstoichiometric composition. We solved the Usadel equations self-consistently and obtained spatial distributions of the order parameter and the quasiparticle density of states which then were used to calculate a low-frequency surface resistance Rs(T ) and the magnetic penetration depth λ (T ) as functions of temperature in the limit of local London electrodynamics. It is shown that the imperfect surface in a single-band s -wave superconductor results in a nonexponential temperature dependence of Z (T ) at T ≪Tc which can mimic the behavior of multiband or d -wave superconductors. The imperfect surface and the broadening of the gap peaks in the quasiparticle density of states N (ɛ ) in the bulk give rise to a weakly temperature-dependent residual surface resistance. We show that the surface resistance can be optimized and even reduced below its value for an ideal surface by engineering N (ɛ ) at the surface using pair-breaking mechanisms, particularly by incorporating a small density of magnetic impurities or by tuning the thickness and conductivity of the normal layer and its contact resistance. The results of this work address the limit of Rs in superconductors at T ≪Tc , and the ways of engineering the optimal density of states by surface nanostructuring and impurities to reduce losses in superconducting microresonators, thin-film strip lines, and radio-frequency cavities for particle accelerators.

Structural modifications and corrosion behavior of martensitic stainless steel nitrided by plasma immersion ion implantation

NASA Astrophysics Data System (ADS)

Figueroa, C. A.; Alvarez, F.; Zhang, Z.; Collins, G. A.; Short, K. T.

2005-07-01

In this work we report a study of the structural modifications and corrosion behavior of martensitic stainless steels (MSS) nitrided by plasma immersion ion implantation (PI3). The samples were characterized by x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, photoemission electron spectroscopy, and potentiodynamic electrochemical measurements. Depending on the PI3 treatment temperature, three different material property trends are observed. At lower implantation temperatures (e.g., 360 °C), the material corrosion resistance is improved and a compact phase of ɛ-(Fe,Cr)3N, without changes in the crystal morphology, is obtained. At intermediate temperatures (e.g., 430 °C), CrN precipitates form principally at grain boundaries, leading to a degradation in the corrosion resistance compared to the original MSS material. At higher temperatures (e.g., 500 °C), the relatively great mobility of the nitrogen and chromium in the matrix induced random precipitates of CrN, transforming the original martensitic phase into α-Fe (ferrite), and causing a further degradation in the corrosion resistance.

Theory of noise equivalent power of a high-temperature superconductor far-infrared bolometer in a photo-thermoelectrical mode of operation

NASA Astrophysics Data System (ADS)

Kaila, M. M.; Russell, G. J.

2000-12-01

We present a theory of noise equivalent power (NEP) and related parameters for a high-temperature superconductor (HTSC) bolometer in which temperature and resistance are the noise sources for open circuit operation and phonon and resistance are the noise sources for voltage-biased operation of the bolometer. The bolometer is designed to use a photo-thermoelectrical mode of operation. A mathematical formulation for the open circuit operation is first presented followed by an analysis of the heterodyne case with a bias applied in constant voltage mode. For the first time electrothermal (ET) and thermoelectrical (TE) feedback are treated in the heat balance equation simultaneously. A parallel resistance geometry consisting of thermoelectric and HTSC material legs has been chosen for the device. Computations for the ET-TE feedback show that the response time improves by three orders of magnitude and the responsivity becomes double for the same TE feedback. In the heat balance equation we have included among the heat transfer processes the temperature dependence of the thermal conductance at the bolometer-substrate interface for the dynamic state.

Activation like behaviour on the temperature dependence of the carrier density in In2O3-ZnO films

NASA Astrophysics Data System (ADS)

K, Makise; B, Shinozaki; T, Asano; K, Yano; H, Nakamura

2012-12-01

We study the effect of annealing in high vacuum on the transport properties for In2O3-ZnO films. We prepared indium zinc oxide films by the DC-magnetron sputtering method using an In2O3-ZnO target (89.3 wt % In2O3 and 10.7 wt % ZnO). The annealing temperature is from 373 to 773K. From the XRD analysis, we find that all as deposited films are amorphous. In addition we find that amorphous films are crystallized by annealing at a temperature above 773 K over 2 hours. The temperature dependence of resistivity ρ of all amorphous films shows metallic behaviour. On the other hand, ρ(T) of poly In2O3-ZnO films shows semi-conducting behaviour. We carry out a detailed analysis of the temperature dependence of Hall mobility. The activation energy Ed has been obtained from the slope of the carrier concentration Ne vs. the inverse temperature plot at high temperatures. We found that the Ed takes values between 0.43 and 0.19 meV. Meanwhile, temperature dependence of Ne for poly-In2O3-ZnO films did not show activation-like behaviour. This behaviour is thought to be causally related to impurity conduction band.

Study of the Effects of High Temperatures on the Engineering Properties of Steel 42CrMo4

NASA Astrophysics Data System (ADS)

Brnic, Josip; Turkalj, Goran; Canadija, Marko; Lanc, Domagoj; Brcic, Marino

2015-02-01

The paper presents and analyzes the experimental results of the effect of elevated temperatures on the engineering properties of steel 42CrMo4. Experimental data relating to the mechanical properties of the material, the creep resistance as well as Charpy impact energy. Temperature dependence of the mentioned properties is also shown. Some of creep curves were simulated using rheological models and an analytical equation. Finally, an assessment of fracture toughness was made that was based on experimentally determined Charpy impact energy. Based on the obtained results it is visible that the tensile strength (617 MPa) and yield strength (415 MPa) have the highest value at the room temperature while at the temperature of 700 °C (973 K) these values significantly decrease. This steel can be considered resistant to creep at 400 °C (673 K), but at higher temperatures this steel can be subjected to low levels of stress in a shorter time.

REPLY: Reply to 'Comment on "Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements"'

NASA Astrophysics Data System (ADS)

Berengue, Olivia M.; Chiquito, Adenilson J.; Pozzi, Livia P.; Lanfredi, Alexandre J. C.; Leite, Edson R.

2009-11-01

In this reply we discuss the use of two and four-probe methods in the resistivity measurements of ITO nanowires. We pointed out that the results obtained by using two or four probe methods are indistinguishable in our case. Additionally we present the correct values for resistivity and consequently for the density of electrons.

Magnetotransport of single crystalline YSb

DOE PAGES

Ghimire, N. J.; Botana, A. S.; Phelan, D.; ...

2016-05-10

Here, we report magnetic field dependent transport measurements on a single crystal of cubic YSb together with first principles calculations of its electronic structure. The transverse magnetoresistance does not saturate up to 9 T and attains a value of 75 000% at 1.8 K. The Hall coefficient is electron-like at high temperature, changes sign to hole-like between 110 and 50 K, and again becomes electron-like below 50 K. First principles calculations show that YSb is a compensated semimetal with a qualitatively similar electronic structure to that of isostructural LaSb and LaBi, but with larger Fermi surface volume. The measured electron carrier density and Hall mobility calculated at 1.8 K, based on a single band approximation, aremore » $$6.5\\times {{10}^{20}}$$ cm –3 and $$6.2\\times {{10}^{4}}$$ cm 2 Vs –1, respectively. These values are comparable with those reported for LaBi and LaSb. Like LaBi and LaSb, YSb undergoes a magnetic field-induced metal-insulator-like transition below a characteristic temperature T m, with resistivity saturation below 13 K. Thickness dependent electrical resistance measurements show a deviation of the resistance behavior from that expected for a normal metal; however, they do not unambiguously establish surface conduction as the mechanism for the resistivity plateau.« less

Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

NASA Astrophysics Data System (ADS)

Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

2017-11-01

Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

Solidification and loss of hydrostaticity in liquid media used for pressure measurements

DOE PAGES

Torikachvili, M. S.; Kim, S. K.; Colombier, E.; ...

2015-12-16

We carried out a study of the pressure dependence of the solidification temperature in nine pressure transmitting media that are liquid at ambient temperature, under pressures up to 2.3 GPa. These fluids are 1:1 isopentane/n-pentane, 4:6 light mineral oil/n-pentane, 1:1 isoamyl alcohol/n-pentane, 4:1 methanol/ethanol, 1:1 FC72/FC84 (Fluorinert), Daphne 7373, isopentane, and Dow Corning PMX silicone oils 200 and 60,000 cS. We relied on the high sensitivity of the electrical resistivity of Ba(Fe 1–xRu x) 2As 2 single crystals to the freezing of the pressure media and cross-checked with corresponding anomalies observed in the resistance of the manganin coil that servedmore » as the ambient temperature resistive manometer. In addition to establishing the temperature-pressure line separating the liquid (hydrostatic) and frozen (non-hydrostatic) phases, these data permit rough estimates of the freezing pressure of these media at ambient temperature. As a result, this pressure establishes the extreme limit for the medium to be considered hydrostatic. For higher applied pressures, the medium has to be treated as non-hydrostatic.« less

Solidification and loss of hydrostaticity in liquid media used for pressure measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torikachvili, M. S.; Kim, S. K.; Colombier, E.

We carried out a study of the pressure dependence of the solidification temperature in nine pressure transmitting media that are liquid at ambient temperature, under pressures up to 2.3 GPa. These fluids are 1:1 isopentane/n-pentane, 4:6 light mineral oil/n-pentane, 1:1 isoamyl alcohol/n-pentane, 4:1 methanol/ethanol, 1:1 FC72/FC84 (Fluorinert), Daphne 7373, isopentane, and Dow Corning PMX silicone oils 200 and 60,000 cS. We relied on the high sensitivity of the electrical resistivity of Ba(Fe 1–xRu x) 2As 2 single crystals to the freezing of the pressure media and cross-checked with corresponding anomalies observed in the resistance of the manganin coil that servedmore » as the ambient temperature resistive manometer. In addition to establishing the temperature-pressure line separating the liquid (hydrostatic) and frozen (non-hydrostatic) phases, these data permit rough estimates of the freezing pressure of these media at ambient temperature. As a result, this pressure establishes the extreme limit for the medium to be considered hydrostatic. For higher applied pressures, the medium has to be treated as non-hydrostatic.« less

Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

NASA Astrophysics Data System (ADS)

Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

2018-06-01

Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions

NASA Astrophysics Data System (ADS)

Xi, Zhongnan; Jin, Qiao; Zheng, Chunyan; Zhang, Yongcheng; Lu, Chaojing; Li, Qiang; Li, Shandong; Dai, Jiyan; Wen, Zheng

2017-09-01

Recently, ferroelectric tunnel junctions (FTJs) have attracted great attention due to promising applications in non-volatile memories. In this study, we report high-temperature tunneling electroresistance (TER) of metal/ferroelectric/semiconductor FTJs. Hysteretic resistance-voltage loops are observed in the Pt/BaTiO3/Nb:SrTiO3 tunnel junction from 300 to 513 K due to the modulation of interfacial Schottky barrier by polarization switching in the 4 u.c.-thick BaTiO3 barrier via a ferroelectric field effect. The Pt/BaTiO3/Nb:SrTiO3 device exhibits a giant ROFF/RON resistance ratio of ˜3 × 105 at 383 K and maintains bipolar resistance switching up to 513 K, suggesting excellent thermal endurance of the FTJs. The temperature-dependent TER behaviors are discussed in terms of the decrease of polarization in the BaTiO3 barrier, and the associated junction barrier profiles are deduced by transport and capacitance analyses. In addition, by extrapolating the retention time at elevated temperature in an Arrhenius-type relation, activation energy of ˜0.93 eV and room-temperature retention time of ˜70 years can be extracted.

Low-temperature transport properties of TaxN thin films (0.72 <= x <= 0.83)

NASA Astrophysics Data System (ADS)

Očko, Miroslav; Žonja, Sanja; Nelson, G. L.; Freericks, J. K.; Yu, Lei; Newman, N.

2010-11-01

We report on low-temperature (4-320 K) transport properties of TaxN thin films deposited on an amorphous SiO2 substrate. In this work, TaxN thin films were restricted to a narrow range of x: 0.72 <= x <= 0.83 yet show considerable and nonmonotonic variation of their transport properties with Ta concentration. This behaviour is consistent with a local minimum in the density of electronic states at the Fermi level, as calculated for the rock salt intermetallic Ta4N5, and a rigid band model for describing the transport. The temperature dependence of the resistivity is best fit to the unusual form exp(-T/T0). Interestingly enough, the fit parameter T0 correlates well with the temperature of the maximum of the corresponding thermopower. Both of these characteristics, the fit and the correlation with the thermopower, are consistent with the Jonson-Mahan many-body formalism for charge and thermal transport when one has a nontrivial temperature dependence of the chemical potential. At the lowest temperatures measured, we have also found that the resistivity and thermopower show signatures of electron-electron interactions. We discuss also our results in the light of some theories usually used for describing transport of thin films and to other experimental investigations that have been performed on TaxN.

Dielectric and Impedance Characteristics of Nickel-Modified BiFeO3-BaTiO3 Electronic Compound

NASA Astrophysics Data System (ADS)

Das, S. N.; Pardhan, S. K.; Bhuyan, S.; Sahoo, S.; Choudhary, R. N. P.; Goswami, M. N.

2018-01-01

The temperature- and field-dependent capacitive, resistive and conducting characteristics of nickel-modified binary electronic systems of bismuth ferrite (BiFeO3) and barium titanate (BaTiO3) have been investigated using dielectric and impedance spectroscopy techniques. The orthorhombic crystal structures of the solid solution (Bi1-2xNixBax)(Fe1-2xTi0.2x)O3 (with x = 0.10, 0.15, 0.20 and 0.25) have been identified from powder x-ray crystallography. The micrographs exhibit the development of dense samples with reduced grain size for higher percentage of Ni in the BiFeO3-BaTiO3. The stoichiometric content of each sample has been realized using the energy dispersive x-ray technique. The relationship between micro-structural study and frequency-temperature-dependent electrical properties of the compound has revealed a negative temperature coefficient of resistance behavior. A non-Debye-type relaxation process is observed from the Niquist plot. The studied compound presents important dielectric properties for the formulation of electronic devices.

Transport properties of massless Dirac fermions in an organic conductor α-(BEDT-TTF)2I3 under pressure

NASA Astrophysics Data System (ADS)

Tajima, N.; Sugawara, S.; Tamura, M.; Kato, R.; Nishio, Y.; Kajita, K.

2007-11-01

A zero-gap state with the Dirac cone-type energy dispersion was found in an organic conductor α-(BEDT-TTF)2I3 under high hydrostatic pressures. This is the first two-dimensional zero-gap state discovered in bulk crystals with layered structures. In contrast to the case of graphene, the Dirac cone in this system is highly anisotropic. The present system, therefore, provides a new type of massless Dirac fermions with anisotropic Fermi velocity. From the galvano-magnetic measurements, the density and mobilities of electrons and holes were determined in the temperature region between 77 K and 2 K. In this region, the carrier density (n) depends on temperature (T) as n~T2 and decreases by about four orders of magnitude. On the other hand, the sheet resistance per BEDT-TTF layer (RS) stays almost constant in the region. The value is written as RS=gh/e2 in terms of the quantum resistance h/e2=25.8 kΩ, where g is a parameter that depends weakly on temperature.

Physical properties of i-R-Cd quasicrystals(R = Y, Gd-Tm)

NASA Astrophysics Data System (ADS)

Kong, Tai; Bud'Ko, Sergey L.; Jesche, Anton; Goldman, Alan I.; Kreyssig, Andreas; Dennis, Kevin W.; Ramazanoglu, Mehmet; Canfield, Paul C.; McArthur, John

2014-03-01

Detailed characterization of recently discovered i-R-Cd (R = Y, Gd-Tm) binary quasicrystals by means of room-temperature powder x-ray diffraction, dc and ac magnetization, resistivity and specific heat measurements will be presented. i-Y-Cd is weakly diamagnetic. The dc magnetization of i-R-Cd (R = Gd, Ho-Tm) shows typical spin-glass type splitting between field-cooled (FC) and zero-field-cooled (ZFC) data. i-Tb-Cd and i-Dy-Cd do not show a clear cusp in their ZFC dc magnetization. ac magnetization measured on i-Gd-Cd indicates a clear frequency-dependence and the third-order non-linear magnetization, χ3, is consistent with a spin-glass transition. The resistivity for i-R-Cd is of order 100 μΩ cm and weakly temperature-dependent. No feature that can be associated with long-range magnetic order was observed in any of the measurements. Characteristic freezing temperatures for i-R-Cd (R = Gd-Tm) deviate from ideal de Gennes scaling. This work is supported by the US DOE, Basic Energy Sciences under Contract No. DE-AC02-07CH11358.

Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

NASA Astrophysics Data System (ADS)

Zhang, Shumao; Kuo, Yue

2018-03-01

Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

Temperature Dependent Electrical Transport Properties of Ni-Cr and Co-Cr Binary Alloys

NASA Astrophysics Data System (ADS)

Thakore, B. Y.; Suthar, P. H.; Khambholja, S. G.; Gajjar, P. N.; Bhatt, N. K.; Jani, A. R.

2011-12-01

The temperature dependent electrical transport properties viz. electrical resistivity and thermal conductivity of Ni10Cr90 and Co20Cr80 alloys are computed at various temperatures. The electrical resistivity has been calculated according to Faber-Ziman model combined with Ashcroft-Langreth partial structure factors. In the present work, to include the ion-electron interaction, we have used a well tested local model potential. For exchange-correlation effects, five different forms of local field correction functions due to Hartree (H), Taylor (T), Ichimaru and Utsumi (IU), Farid et al (F) and Sarkar et al (S) are used. The present results due to S function are in good agreement with the experimental data as compared to results obtained using other four functions. The S functions satisfy compressibility sum rule in long wave length limit more accurately as compared to T, IU and F functions, which may be responsible for better agreement of results, obtained using S function. Also, present result confirms the validity of present approach in determining the transport properties of alloys like Ni-Cr and Co-Cr.

Electrode performance parameters for a radioisotope-powered AMTEC for space power applications

NASA Technical Reports Server (NTRS)

Underwood, M. L.; O'Connor, D.; Williams, R. M.; Jeffries-Nakamura, B.; Ryan, M. A.; Bankston, C. P.

1992-01-01

The alkali metal thermoelastic converter (AMTEC) is a device for the direct conversion of heat to electricity. Recently a design of an AMTEC using a radioisotope heat source was described, but the optimum condenser temperature was hotter than the temperatures used in the laboratory to develop the electrode performance model. Now laboratory experiments have confirmed the dependence of two model parameters over a broader range of condenser and electrode temperatures for two candidate electrode compositions. One parameter, the electrochemical exchange current density at the reaction interface, is independent of the condenser temperature, and depends only upon the collision rate of sodium at the reaction zone. The second parameter, a morphological parameter, which measures the mass transport resistance through the electrode, is independent of condenser and electrode temperatures for molybdenum electrodes. For rhodium-tungsten electrodes, however, this parameter increases for decreasing electrode temperature, indicating an activated mass transport mechanism such as surface diffusion.

Transport properties of Co2CrAl Heusler alloy films

NASA Astrophysics Data System (ADS)

Kudryavtsev, Y. V.; Lee, Y. P.; Yoo, Y. J.; Seo, M. S.; Kim, J. M.; Hwang, J. S.; Dubowik, J.; Kim, K. W.; Choi, E. H.; Prokhnenko, O.

2012-01-01

The effect of atomic disorder on the electron transport and the magnetoresistance (MR) of Co2CrAl Heusler alloy (HA) films has been investigated. We show that Co2CrAl films with L21 order exhibit a negative value for the temperature coefficient of resistivity (TCR) in a temperature range of 10 < T < 290 K, and the temperature dependence of electric conductivity varies as T 3/2 similarly to that of the zero-gap semiconductors. The atomic or the site disorder on the way of L21 → B2 → A2 → amorphous state in Co2CrAl HA films causes the deviation from this dependence: reduction in the absolute value of TCR as well as decrease in the resistivity down to ϱ( T = 293 K) ˜ 200 μΩ cm in comparison to ϱ( T = 293 K) ˜ 230 μΩ cm typical for the Co2CrAl films with L21 order. The magnetic-field dependence of MR of the Co2CrAl films with L21 order is determined by two competing contributions: a positive Lorentz scattering and a negative s-d scattering. The atomic disorder in Co2CrAl films drastically changes MR behavior due to its strong influence on the magnetic properties.

Tailorable Burning Behavior of Ti14 Alloy by Controlling Semi-Solid Forging Temperature

PubMed Central

Chen, Yongnan; Yang, Wenqing; Zhan, Haifei; Zhang, Fengying; Huo, Yazhou; Zhao, Yongqing; Song, Xuding; Gu, Yuantong

2016-01-01

Semi-solid processing (SSP) is a popular near-net-shape forming technology for metals, while its application is still limited in titanium alloy mainly due to its low formability. Recent works showed that SSP could effectively enhance the formability and mechanical properties of titanium alloys. The processing parameters such as temperature and forging rate/ratio, are directly correlated with the microstructure, which endow the alloy with different chemical and physical properties. Specifically, as a key structural material for the advanced aero-engine, the burn resistant performance is a crucial requirement for the burn resistant titanium alloy. Thus, this work aims to assess the burning behavior of Ti14, a kind of burn resistant alloy, as forged at different semi-solid forging temperatures. The burning characteristics of the alloy are analyzed by a series of burning tests with different burning durations, velocities, and microstructures of burned sample. The results showed that the burning process is highly dependent on the forging temperature, due to the fact that higher temperatures would result in more Ti2Cu precipitate within grain and along grain boundaries. Such a microstructure hinders the transport of oxygen in the stable burning stage through the formation of a kind of oxygen isolation Cu-enriched layer under the burn product zone. This work suggests that the burning resistance of the alloy can be effectively tuned by controlling the temperature during the semi-solid forging process. PMID:28773820

High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer

NASA Astrophysics Data System (ADS)

Maruyama, Keisuke; Hanafusa, Hiroaki; Ashihara, Ryuhei; Hayashi, Shohei; Murakami, Hideki; Higashi, Seiichiro

2015-06-01

We have investigated high-temperature and rapid annealing of a silicon carbide (SiC) wafer by atmospheric pressure thermal plasma jet (TPJ) irradiation for impurity activation. To reduce the temperature gradient in the SiC wafer, a DC current preheating system and the lateral back-and-forth motion of the wafer were introduced. A maximum surface temperature of 1835 °C within 2.4 s without sample breakage was achieved, and aluminum (Al), phosphorus (P), and arsenic (As) activations in SiC were demonstrated. We have investigated precise control of heating rate (Rh) and cooling rate (Rc) during rapid annealing of P+-implanted 4H-SiC and its impact on impurity activation. No dependence of resistivity on Rh was observed, while increasing Rc significantly decreased resistivity. A minimum resistivity of 0.0025 Ω·cm and a maximum carrier concentration of 2.9 × 1020 cm-3 were obtained at Rc = 568 °C/s.

Correction of the heat loss method for calculating clothing real evaporative resistance.

PubMed

Wang, Faming; Zhang, Chengjiao; Lu, Yehu

2015-08-01

In the so-called isothermal condition (i.e., Tair [air temperature]=Tmanikin [manikin temperature]=Tr [radiant temperature]), the actual energy used for moisture evaporation detected by most sweating manikins was underestimated due to the uncontrolled fabric 'skin' temperature Tsk,f (i.e., Tsk,f

Optical and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films

NASA Astrophysics Data System (ADS)

Gao, Y. Q.; Huang, Z. M.; Hou, Y.; Wu, J.; Chu, J. H.

2013-12-01

Mn1.56Co0.96Ni0.48O4 (MCN) films with different layers have been prepared on Al2O3 substrate by chemical solution deposition method. The microstructures, optical and electrical properties of the films are investigated. X-ray diffraction and microstructure analyses show good crystallization and both the crystalline quality and the grain size are improved with the increasing thickness of the films. Mid-infrared optical properties of MCN films have been investigated using transmission spectra. The results show the red shift of absorption with the increasing film thickness and the energy gap Eg decrease from 0.6422 eV to 0.6354 eV. All the MCN films show an exponential decrease in the resistivity with increasing temperature within the measured range. The temperature dependence resistivity can be described by the small polarons hopping model. Using this model, the characteristic temperature T0 and activation energy E of the MCN films were derived. With the film thickness increase, the T0 and E of the MCN films increase. The calculated room temperature coefficient of resistance (TCR) of MCN film with 100 layers is -3.5% K-1. The MCN films showed appropriate resistance and high value of TCR, these advantages make them very preponderant for thermal sensors.

Electrical Characterization of Thin Film Cadmium Telluride Electrodeposited from Tri-N Telluride

NASA Astrophysics Data System (ADS)

von Windheim, Jesko A.

The electrical transport properties of CdTe electrodeposited from tri-n-butylphosphine telluride have been studied by resistivity and Hall effect measurements. Methods have been developed to reproducibly remove large area samples from their conducting substrates, and these samples were prepared for temperature dependent Hall measurements and resistivity measurements. Apparatus was designed and built to routinely measure Hall voltages as low as 250 muV for source impedances up to 10 ^{12} Omega. The central aspect of the measurement system was a low cost, differential electrometer amplifier designed around the AD549L monolithic electrometer operational amplifier. Temperature control was achieved via a Eurotherm 808 temperature controller, and a cooled stream of nitrogen gas. With this system, temperature could be maintained within +/- 0.5^circC at set points between -40^circC and +40^circC. Data collection, temperature ramping, and power to the magnet were all computer controlled, and resistivity measurements were fully automated. As-annealed electrodeposited CdTe was found to be consistently p-type, with resistivity values typically 10^6- 10^{7 } Omega-cm. Various donor and acceptor dopants have been incorporated into polycrystalline CdTe films by three methods: electrochemical codeposition, electromigration and vapour techniques. The dopants were Cd, Te, Cu, Ag, In, and O_2. The activity of the dopant was dependent on the method that was used for incorporation. Oxygen was found to only have a significant effect when it was incorporated in situ, during deposition. For Cd and Te, on the other hand, little effect was seen when their concentration was varied in situ. However, hole concentration increased substantially when Te was incorporated by diffusion, and a p to n conversion was observed when Cd was incorporated by diffusion. The carrier concentration of p-type CdTe could be systematically increased by increasing the current density for the electromigration of copper. The decreasing carrier concentration was accompanied by a decrease in resistivity and a decrease in mobility. The effect of dopant density on the resistivity of the polycrystalline cadmium telluride films, deposited from tri-n-butylphosphine telluride, can consistently be described by a grain boundary model. In this model charging of grain boundary states results in a barrier and can affect the carrier density. According to the model, dopants accumulated at grain boundaries do not generate carriers and do not affect the density of interface states.

Pressure dependence of the electrical properties of GaBi solidified in low gravity

NASA Technical Reports Server (NTRS)

Wu, M. K.; Ashburn, J. R.; Torng, C. J.; Curreri, P. A.; Chu, C. W.

1987-01-01

Immiscible GaBi alloys were solidified during free fall in the NASA Marshall Space Flight Center drop tower, which provides about 4.5 seconds of low gravity. The electrical resistivity and magnetic susceptibility were measured as a function of pressure (up to 18 kbar) and temperature (300 K to 4.2 K) of drop tower (DT) and ground control (GC) samples prepared under identical conditions, except for gravity. At ambient pressure the electrical resistance of the DT sample exhibits a broad maximum at 100 K, while that of GC sample decreases rapidly as temperature decreases. Both DT and GC samples become superconducting at 7.7 K. However, a minor second superconducting phase with a transition temperature at 8.3 K is observed only in the DT samples.

Magnetically-related properties of bismuth containing high Tc superconductors

NASA Astrophysics Data System (ADS)

Vezzoli, Gary C.; Chen, M. F.; Craver, F.; Safari, A.; Moon, B. M.; Lalevic, B.; Burke, Terence; Shoga, M.

1990-08-01

The effect of magnetic fields to 15 T on electrical resistance has been measured for the BiSrCaCuO superconductor at precise temperatures during the transition to the superconducting state from pre-onset conditions to essentially zero resistance conditions. The results show that the temperature at which the magnetic field causes a divergence in the resistance versus 1000/ T curve is approximately the same temperature as the value at which, during cooling, the positive Hall coefficient begins its abrupt descent to zero. This temperature gives the best measure of Tc. It is also shown that small oscillations of low frequency start near onset conditions, the amplitude of which at a given temperature is B-field dependent. Additionally, Hall effect studies as a function of temperature at 4 T in three separate experiments (including high Tc BiSrCaCu PbO of > 90% theoretical density) show that sharp delta-function-like peaks in + RH are observed near Tc and are superimposed on a broader maximum. The Hall data are explicable in terms of exciton formation and ionization. The bound holes associated with these excitons are believed to be the mediators producing Cooper-pairing, and scale very well with Tc for all the known high Tc oxides.

Coulomb drag in electron-hole bilayer: Mass-asymmetry and exchange correlation effects

NASA Astrophysics Data System (ADS)

Arora, Priya; Singh, Gurvinder; Moudgil, R. K.

2018-04-01

Motivated by a recent experiment by Zheng et al. [App. Phys. Lett. 108, 062102 (2016)] on coulomb drag in electron-hole and hole-hole bilayers based on GaAs/AlGaAs semiconductor heterostructure, we investigate theoretically the influence of mass-asymmetry and temperature-dependence of correlations on the drag rate. The correlation effects are dealt with using the Vignale-Singwi effective inter-layer interaction model which includes correlations through local-field corrections to the bare coulomb interactions. However, in this work, we have incorporated only the intra-layer correlations using the temperature-dependent Hubbard approximation. Our results display a reasonably good agreement with the experimental data. However, it is crucial to include both the electron-hole mass-asymmetry and temperature-dependence of correlations. Mass-asymmetry and correlations are found to result in a substantial enhancement of drag resistivity.

Crystal growth and magneto-transport behavior of PdS1-δ

NASA Astrophysics Data System (ADS)

Cao, Lin; Lv, Yang-Yang; Chen, Si-Si; Li, Xiao; Zhou, Jian; Yao, Shu-Hua; Chen, Y. B.; Lu, Minghui; Chen, Yan-Feng

2018-04-01

PdS is theoretically proposed to novel topological material with eight-band fermions. Here, PdS1-δ crystals were successfully grown from KI as solvent by modified flux method. The single crystalline quality and compositional homogeneity of grown PdS1-δ are characterized by X-ray diffraction and energy dispersion spectroscopy. Temperature dependent electrical transport property of PdS1-δ demonstrates a semiconductor-like behavior. Analysis of temperature-dependent resistance indicates that there is variable-range-hopping behavior at low temperature. The clear negative MR of PdS1-δ single crystals is measured at the low temperature (<30 K), which may be ascribed to the interaction between conducting carriers and localized moments. however, the magneto-transport results have not shown the clues of topological feature of PdS.

Diffusion in higher dimensional SYK model with complex fermions

NASA Astrophysics Data System (ADS)

Cai, Wenhe; Ge, Xian-Hui; Yang, Guo-Hong

2018-01-01

We construct a new higher dimensional SYK model with complex fermions on bipartite lattices. As an extension of the original zero-dimensional SYK model, we focus on the one-dimension case, and similar Hamiltonian can be obtained in higher dimensions. This model has a conserved U(1) fermion number Q and a conjugate chemical potential μ. We evaluate the thermal and charge diffusion constants via large q expansion at low temperature limit. The results show that the diffusivity depends on the ratio of free Majorana fermions to Majorana fermions with SYK interactions. The transport properties and the butterfly velocity are accordingly calculated at low temperature. The specific heat and the thermal conductivity are proportional to the temperature. The electrical resistivity also has a linear temperature dependence term.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jana, R. N.; Meikap, A. K.

The results of a comprehensive study of weak electron localization (WEL) and electron-electron interaction (EEI) effects in disordered V{sub 75}X{sub 25} (X = Pd, Al) alloys has been reported. The resistivity in absence of magnetic field shows a minimum at temperature T = T{sub m} and follows T{sup 1/2} law within the temperature range 5 K ≤ T ≤ T{sub m}, which suggests predominant EEI effect. Magnetoresistivity is positive due to strong spin-orbit interaction. The dephasing scattering time is dominated by the electron-phonon scattering. The electron-phonon scattering rate shows quadratic temperature dependence behavior, which is explained by the theory ofmore » incomplete dragging at the random scattering potential by phonons. The zero temperature scattering time strongly depends on the disorder and its magnitude decreases with increasing disorder.« less

The existence of superconductivity in Nb1.75Ta0.25PdS5

NASA Astrophysics Data System (ADS)

Venkateshwarlu, D.; Patidar, Manju Mishra; Singh, Durgesh; Amarendra, G.; Ganesan, V.

2018-05-01

Nb2PdS5 is a novel superconductor having promising potential for applications. Synthesis of this by solid state reaction, characterization using susceptibility and resistivity of Ta substituted Nb2PdS5 is reported in the present paper. Nb1.75Ta0.25PdS5 shows a diamagnetic transition at 6K while the onset of superconducting transition in resistivity is found at 6.73K; the slight difference is attributed to Aslamazov-Larkin paraconductivity fluctuations. This can be ascertained from the fact that the transition seen in resistivity is so broad that the zero resistance state is elusive due to weak inter grain coupling. We also report temperature dependence of resistivity under magnetic fields up to 16T that shows considerable broadening in fields that can be attributed to the field induced resistive state with underlying vortex motion. The results are explained based on models like thermally activated flux flow (TAFF) in the light of Kramer's relation. The normal state just above Tc has a negative temperature co-efficient of resistivity reminiscent of the Anderson localization scenario. The estimated critical field of 27T is more than two times higher than that of Pauli limit.

AIRCRAFT SHELTER-DICE THROW Data Report

DTIC Science & Technology

1977-03-01

damping fluid viscosity is temperature dependent, a number of thermistors were installed at velocity transducer locations. Accurate calibra- tion of these... thermistors enabled the temperatures at the velocity gage locations to be _etermi.ied through measurement of the thermistor resistances. These...stationary (reference) targets. As shown in Figures C-3 and C-5, targets were fabricated from steel pipe and welded to imbedded steel plates in the

Duality picture of Superconductor-insulator transitions on Superconducting nanowire.

PubMed

Makise, Kazumasa; Terai, Hirotaka; Tominari, Yukihiro; Tanaka, Shukichi; Shinozaki, Bunju

2016-06-17

In this study, we investigated the electrical transport properties of niobium titanium nitride (NbTiN) nanowire with four-terminal geometries to clarify the superconducting phase slip phenomena and superconducting-insulator transitions (SIT) for one-dimensional superconductors. We fabricated various nanowires with different widths and lengths from epitaxial NbTiN films using the electron beam lithography method. The temperature dependence of resistance R(T) below the superconducting transition temperature Tc was analyzed using thermal activation phase slip (TAPS) and quantum phase slip (QPS) theories. Although the accuracy of experimental data at low temperatures can deviate when using the TAPS model, the QPS model thoroughly represents the R(T) characteristic with resistive tail at low temperatures. From the analyses of data on Tc, we found that NbTiN nanowires exhibit SIT because of the change in the ratio of kinetic inductance energy and QPS amplitude energy with respect to the flux-charge duality theory.

Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping

NASA Astrophysics Data System (ADS)

Sun, Zhuting; Burgess, Tim; Tan, H. H.; Jagadish, Chennupati; Kogan, Andrei

2018-04-01

We have investigated the nonlinear conductance in diffusion-doped Si:GaAs nanowires contacted by patterned metal films in a wide range of temperatures T. The wire resistance R W and the zero bias resistance R C, dominated by the contacts, exhibit very different responses to temperature changes. While R W shows almost no dependence on T, R C varies by several orders of magnitude as the devices are cooled from room temperature to T = 5 K. We develop a model that employs a sharp donor level very low in the GaAs conduction band and show that our observations are consistent with the model predictions. We then demonstrate that such measurements can be used to estimate carrier properties in nanostructured semiconductors and obtain an estimate for N D, the doping density in our samples. We also discuss the effects of surface states and dielectric confinement on carrier density in semiconductor nanowires.

Hall effect of copper nitride thin films

NASA Astrophysics Data System (ADS)

Yue, G. H.; Liu, J. Z.; Li, M.; Yuan, X. M.; Yan, P. X.; Liu, J. L.

2005-08-01

The Hall effect of copper nitride (Cu3N) thin films was investigated in our work. Cu3N films were deposited on glass substrates by radio-frequency (RF) magnetron sputtering at different temperatures using pure copper as the sputtering target. The Hall coefficients of the films are demonstrated to be dependent on the deposition gas flow rate and the measuring temperature. Both the Hall coefficient and resistance of the Cu3N films increase with the nitrogen gas flow rate at room temperature, while the Hall mobility and the carrier density of the films decrease. As the temperature changed from 100 K to 300 K, the Hall coefficient and the resistivity of the films decreased, while the carrier density increased and Hall mobility shows no great change. The energy band gap of the Cu3N films deduced from the curve of the common logarithm of the Hall coefficient against 1/T is 1.17-1.31 eV.

Impact of thermal stress on evolutionary trajectories of pathogen resistance in three-spined stickleback (Gasterosteus aculeatus).

PubMed

Schade, Franziska M; Shama, Lisa N S; Wegner, K Mathias

2014-07-26

Pathogens are a major regulatory force for host populations, especially under stressful conditions. Elevated temperatures may enhance the development of pathogens, increase the number of transmission stages, and can negatively influence host susceptibility depending on host thermal tolerance. As a net result, this can lead to a higher prevalence of epidemics during summer months. These conditions also apply to marine ecosystems, where possible ecological impacts and the population-specific potential for evolutionary responses to changing environments and increasing disease prevalence are, however, less known. Therefore, we investigated the influence of thermal stress on the evolutionary trajectories of disease resistance in three marine populations of three-spined sticklebacks Gasterosteus aculeatus by combining the effects of elevated temperature and infection with a bacterial strain of Vibrio sp. using a common garden experiment. We found that thermal stress had an impact on fish weight and especially on survival after infection after only short periods of thermal acclimation. Environmental stress reduced genetic differentiation (QST) between populations by releasing cryptic within-population variation. While life history traits displayed positive genetic correlations across environments with relatively weak genotype by environment interactions (GxE), environmental stress led to negative genetic correlations across environments in pathogen resistance. This reversal of genetic effects governing resistance is probably attributable to changing environment-dependent virulence mechanisms of the pathogen interacting differently with host genotypes, i.e. GPathogenxGHostxE or (GPathogenxE)x(GHostxE) interactions, rather than to pure host genetic effects, i.e. GHostxE interactions. To cope with climatic changes and the associated increase in pathogen virulence, host species require wide thermal tolerances and pathogen-resistant genotypes. The higher resistance we found for some families at elevated temperatures showed that there is evolutionary potential for resistance to Vibrio sp. in both thermal environments. The negative genetic correlation of pathogen resistance between thermal environments, on the other hand, indicates that adaptation to current conditions can be a weak predictor for performance in changing environments. The observed feedback on selective gradients exerted on life history traits may exacerbate this effect, as it can also modify the response to selection for other vital components of fitness.

High temperature transport properties of co-substituted Ca{sub 1−x}Ln{sub x}Mn{sub 1−x}Nb{sub x}O{sub 3} (Ln = Yb, Lu; 0.02 ≤ x ≤ 0.08)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nag, Abanti, E-mail: abanti@nal.res.in; Bose, Rapaka S.C.

Highlights: • The thermoelectric Ca{sub 1−x}Ln{sub x}Mn{sub 1−x}Nb{sub x}O{sub 3} (Ln = Yb, Lu) perovskite are prepared by solid state reaction. • The high temperature transport properties are explored. • The co-substituted Ca{sub 1−x}Ln{sub x}Mn{sub 1−x}Nb{sub x}O{sub 3} shows non-metal-like temperature dependence of resistivity. • The Seebeck coefficient of Ca{sub 1−x}Ln{sub x}Mn{sub 1−x}Nb{sub x}O{sub 3} exhibits metallic nature. • The puzzling transport phenomenon is originated from oxygen vacancy related defect centres. - Abstract: The co-substituted Ca{sub 1−x}Ln{sub x}Mn{sub 1−x}Nb{sub x}O{sub 3} (Ln = Yb, Lu; 0.02 ≤ x ≤ 0.08) are synthesized by solid-state reaction and the electronic transport propertiesmore » are investigated. Rietveld refinement confirms the formation of single phase orthorhombic structure with gradual increase of cell parameters with doping level. The electronic transport properties such as Seebeck coefficient and electrical resistivity decrease with increasing the dopant concentration for both the co-substituted compositions. All the compositions of Ca{sub 1−x}Ln{sub x}Mn{sub 1−x}Nb{sub x}O{sub 3} show nonmetal-like temperature dependence of resistivity; whereas metal-like temperature dependence of thermopower. This inconsistency is explained by the formation of oxygen vacancy associated defect centres that originates from partial reduction of Mn{sup 4+} to Mn{sup 3+} due to co-substitution. The defect centres act as extrinsic carriers and cause additional contribution to the entropy of the system, leading to increase of Seebeck coefficient as a function of temperature. The transport mechanism of charge carriers is explained in the framework of Mott’s small polaron hopping mechanism.« less

Temperature anisotropy at equilibrium reveals nonlocal entropic contributions to interfacial properties.

PubMed

Wilhelmsen, Øivind; Trinh, Thuat T; Lervik, Anders

2018-01-01

Density gradient theory for fluids has played a key role in the study of interfacial phenomena for a century. In this work, we revisit its fundamentals by examining the vapor-liquid interface of argon, represented by the cut and shifted Lennard-Jones fluid. The starting point has traditionally been a Helmholtz energy functional using mass densities as arguments. By using rather the internal energy as starting point and including the entropy density as an additional argument, following thereby the phenomenological approach from classical thermodynamics, the extended theory suggests that the configurational part of the temperature has different contributions from the parallel and perpendicular directions at the interface, even at equilibrium. We find a similar anisotropy by examining the configurational temperature in molecular dynamics simulations and obtain a qualitative agreement between theory and simulations. The extended theory shows that the temperature anisotropy originates in nonlocal entropic contributions, which are currently missing from the classical theory. The nonlocal entropic contributions discussed in this work are likely to play a role in the description of both equilibrium and nonequilibrium properties of interfaces. At equilibrium, they influence the temperature- and curvature-dependence of the surface tension. Across the vapor-liquid interface of the Lennard Jones fluid, we find that the maximum in the temperature anisotropy coincides precisely with the maximum in the thermal resistivity relative to the equimolar surface, where the integral of the thermal resistivity gives the Kapitza resistance. This links the temperature anisotropy at equilibrium to the Kapitza resistance of the vapor-liquid interface at nonequilibrium.

Temperature anisotropy at equilibrium reveals nonlocal entropic contributions to interfacial properties

NASA Astrophysics Data System (ADS)

Wilhelmsen, Øivind; Trinh, Thuat T.; Lervik, Anders

2018-01-01

Density gradient theory for fluids has played a key role in the study of interfacial phenomena for a century. In this work, we revisit its fundamentals by examining the vapor-liquid interface of argon, represented by the cut and shifted Lennard-Jones fluid. The starting point has traditionally been a Helmholtz energy functional using mass densities as arguments. By using rather the internal energy as starting point and including the entropy density as an additional argument, following thereby the phenomenological approach from classical thermodynamics, the extended theory suggests that the configurational part of the temperature has different contributions from the parallel and perpendicular directions at the interface, even at equilibrium. We find a similar anisotropy by examining the configurational temperature in molecular dynamics simulations and obtain a qualitative agreement between theory and simulations. The extended theory shows that the temperature anisotropy originates in nonlocal entropic contributions, which are currently missing from the classical theory. The nonlocal entropic contributions discussed in this work are likely to play a role in the description of both equilibrium and nonequilibrium properties of interfaces. At equilibrium, they influence the temperature- and curvature-dependence of the surface tension. Across the vapor-liquid interface of the Lennard Jones fluid, we find that the maximum in the temperature anisotropy coincides precisely with the maximum in the thermal resistivity relative to the equimolar surface, where the integral of the thermal resistivity gives the Kapitza resistance. This links the temperature anisotropy at equilibrium to the Kapitza resistance of the vapor-liquid interface at nonequilibrium.

Dynamic strain aging in the high-temperature low-cycle fatigue of SA508 Cl. 3 forging steel

NASA Astrophysics Data System (ADS)

Lee, Byung Ho; Kim, In Sup

1995-10-01

The effect of dynamic strain aging on cyclic stress response and fatigue resistance of ASME SA508 Cl.3 forging steel for nuclear reactor pressure vessels has been evaluated in the temperature range of room temperature to 500°C. Total strain ranges and strain rates were varied from 0.7 to 2.0% and from 4 × 10 -4 to 1 × 10 -2 s -1, respectively. The cyclic stress response depended on the testing temperature, strain rate, and range. Generally, the initial cyclic hardening was immediately followed by cyclic softening at all strain rates. However, at 300°C, the operating temperature of nuclear reactor pressure vessels, the variation of cyclic stress amplitude showed the primary and secondary hardening stages dependent on the strain rate and strain range. Dynamic strain aging was manifested by enhanced cyclic hardening, distinguished secondary hardening, and negative strain rate sensitivity. A modified cell shutting model was described for the onset of the secondary hardening due to the dynamic strain aging and it was in good agreement with the experimental results. Fatigue life increased in strain rate at all testing temperatures. Specifically the fatigue life was longer at the dynamic strain aging temperature. Further, the dynamic strain aging was easy to initiate the crack, while crack propagation was retarded by crack branching and suppression of plastic zone, hence the dynamic strain aging caused the improvement of fatigue resistance.

Fitness Effects of Chlorpyrifos in the Damselfly Enallagma cyathigerum Strongly Depend upon Temperature and Food Level and Can Bridge Metamorphosis

PubMed Central

Janssens, Lizanne; Stoks, Robby

2013-01-01

Interactions between pollutants and suboptimal environmental conditions can have severe consequences for the toxicity of pollutants, yet are still poorly understood. To identify patterns across environmental conditions and across fitness-related variables we exposed Enallagma cyathigerum damselfly larvae to the pesticide chlorpyrifos at two food levels or at two temperatures and quantified four fitness-related variables (larval survival, development time, mass at emergence and adult cold resistance). Food level and temperature did not affect survival in the absence of the pesticide, yet the pesticide reduced survival only at the high temperature. Animals reacted to the pesticide by accelerating their development but only at the high food level and at the low temperature; at the low food level, however, pesticide exposure resulted in a slower development. Chlorpyrifos exposure resulted in smaller adults except in animals reared at the high food level. Animals reared at the low food level and at the low temperature had a higher cold resistance which was not affected by the pesticide. In summary our study highlight that combined effects of exposure to chlorpyrifos and the two environmental conditions (i) were mostly interactive and sometimes even reversed in comparison with the effect of the environmental condition in isolation, (ii) strongly differed depending on the fitness-related variable under study, (iii) were not always predictable based on the effect of the environmental condition in isolation, and (iv) bridged metamorphosis depending on which environmental condition was combined with the pesticide thereby potentially carrying over from aquatic to terrestrial ecosystems. These findings are relevant when extrapolating results of laboratory tests done under ideal environmental conditions to natural communities. PMID:23840819

Evidence for phonon skew scattering in the spin Hall effect of platinum

NASA Astrophysics Data System (ADS)

Karnad, G. V.; Gorini, C.; Lee, K.; Schulz, T.; Lo Conte, R.; Wells, A. W. J.; Han, D.-S.; Shahbazi, K.; Kim, J.-S.; Moore, T. A.; Swagten, H. J. M.; Eckern, U.; Raimondi, R.; Kläui, M.

2018-03-01

We measure and analyze the effective spin Hall angle of platinum in the low-residual resistivity regime by second-harmonic measurements of the spin-orbit torques for a multilayer of Pt |Co | AlOx . An angular-dependent study of the torques allows us to extract the effective spin Hall angle responsible for the damping-like torque in the system. We observe a strikingly nonmonotonic and reproducible temperature dependence of the torques. This behavior is compatible with recent theoretical predictions which include both intrinsic and extrinsic (impurities and phonons) contributions to the spin Hall effect at finite temperatures.

Modeling of electric and heat processes in spot resistance welding of cross-wire steel bars

NASA Astrophysics Data System (ADS)

Iatcheva, Ilona; Darzhanova, Denitsa; Manilova, Marina

2018-03-01

The aim of this work is the modeling of coupled electric and heat processes in a system for spot resistance welding of cross-wire reinforced steel bars. The real system geometry, dependences of material properties on the temperature, and changes of contact resistance and released power during the welding process have been taken into account in the study. The 3D analysis of the coupled AC electric and transient thermal field distributions is carried out using the finite element method. The novel feature is that the processes are modeled for several successive time stages, corresponding to the change of contact area, related contact resistance, and reduction of the released power, occurring simultaneously with the creation of contact between the workpieces. The values of contact resistance and power changes have been determined on the basis of preliminary experimental and theoretical investigations. The obtained results present the electric and temperature field distributions in the system. Special attention has been paid to the temperature evolution at specified observation points and lines in the contact area. The obtained information could be useful for clarification of the complicated nature of interrelated electric, thermal, mechanical, and physicochemical welding processes. Adequate modeling is also an opportunity for proper control and improvement of the system.

Apparatus Notes.

ERIC Educational Resources Information Center

Eaton, Bruce G., Ed.

1980-01-01

This collection of notes describes (1) an optoelectronic apparatus for classroom demonstrations of mechanical laws, (2) a more efficient method for demonstrated nuclear chain reactions using electrically energized "traps" and ping-pong balls, and (3) an inexpensive demonstration for qualitative analysis of temperature-dependent resistance. (CS)

Temperature dependent dielectric and conductivity studies of polyvinyl alcohol-ZnO nanocomposite films by impedance spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hemalatha, K. S.; Damle, R.; Rukmani, K., E-mail: rukmani9909@yahoo.co.in

2015-10-21

Dielectric and conductivity behaviors of nano ZnO doped polyvinyl alcohol (PVA) composites for various concentrations of dopant were investigated using impedance spectroscopy for a wide range of temperatures (303 K–423 K) and frequencies (5 Hz–30 MHZ). The dielectric properties of host polymer matrix have been improved by the addition of nano ZnO and are found to be highly temperature dependent. Anomalous dielectric behavior was observed in the frequency range of 2.5 MHz–5 MHz. Increase in dielectric permittivity and dielectric loss was observed with respect to temperature. The Cole-Cole plot could be modeled by low resistance regions in a high resistance matrix and the lowest resistance wasmore » observed for the 10 mol. % films. The imaginary part of the electric modulus showed asymmetric peaks with the relaxation following Debye nature below and non-Debye nature above the peaks. The ac conductivity is found to obey Jonscher's power law, whereas the variation of dc conductivity with temperature was found to follow Arrhenius behavior. Two different activation energy values were obtained from Arrhenius plot indicating that two conduction mechanisms are involved in the composite films. Fitting the ac conductivity data to Jonscher's law indicates that large polaron assisted tunneling is the most likely conduction mechanism in the composites. Maximum conductivity is observed at 423 K for all the samples and it is optimum for 10 mol. % ZnO doped PVA composite film. Significant increase in dc and ac conductivities in these composite films makes them a potential candidate for application in electronic devices.« less

Zero-field quantum critical point in Ce0.91Yb0.09CoIn5

NASA Astrophysics Data System (ADS)

Singh, Y. P.; Adhikari, R. B.; Haney, D. J.; White, B. D.; Maple, M. B.; Dzero, M.; Almasan, C. C.

2018-05-01

We present results of specific heat, electrical resistance, and magnetoresistivity measurements on single crystals of the heavy-fermion superconducting alloy Ce0.91Yb0.09CoIn5 . Non-Fermi-liquid to Fermi-liquid crossovers are clearly observed in the temperature dependence of the Sommerfeld coefficient γ and resistivity data. Furthermore, we show that the Yb-doped sample with x =0.09 exhibits universality due to an underlying quantum phase transition without an applied magnetic field by utilizing the scaling analysis of γ . Fitting of the heat capacity and resistivity data based on existing theoretical models indicates that the zero-field quantum critical point is of antiferromagnetic origin. Finally, we found that at zero magnetic field the system undergoes a third-order phase transition at the temperature Tc 3≈7 K.

Cross-plane electronic and thermal transport properties of p-type La0.67Sr0.33MnO3/LaMnO3 perovskite oxide metal/semiconductor superlattices

NASA Astrophysics Data System (ADS)

Jha, Pankaj; Sands, Timothy D.; Cassels, Laura; Jackson, Philip; Favaloro, Tela; Kirk, Benjamin; Zide, Joshua; Xu, Xianfan; Shakouri, Ali

2012-09-01

Lanthanum strontium manganate (La0.67Sr0.33MnO3, i.e., LSMO)/lanthanum manganate (LaMnO3, i.e., LMO) perovskite oxide metal/semiconductor superlattices were investigated as a potential p-type thermoelectric material. Growth was performed using pulsed laser deposition to achieve epitaxial LSMO (metal)/LMO (p-type semiconductor) superlattices on (100)-strontium titanate (STO) substrates. The magnitude of the in-plane Seebeck coefficient of LSMO thin films (<20 μV/K) is consistent with metallic behavior, while LMO thin films were p-type with a room temperature Seebeck coefficient of 140 μV/K. Thermal conductivity measurements via the photo-acoustic (PA) technique showed that LSMO/LMO superlattices exhibit a room temperature cross-plane thermal conductivity (0.89 W/m.K) that is significantly lower than the thermal conductivity of individual thin films of either LSMO (1.60 W/m.K) or LMO (1.29 W/m.K). The lower thermal conductivity of LSMO/LMO superlattices may help overcome one of the major limitations of oxides as thermoelectrics. In addition to a low cross-plane thermal conductivity, a high ZT requires a high power factor (S2σ). Cross-plane electrical transport measurements were carried out on cylindrical pillars etched in LSMO/LMO superlattices via inductively coupled plasma reactive ion etching. Cross-plane electrical resistivity data for LSMO/LMO superlattices showed a magnetic phase transition temperature (TP) or metal-semiconductor transition at ˜330 K, which is ˜80 K higher than the TP observed for in-plane resistivity of LSMO, LMO, or LSMO/LMO thin films. The room temperature cross-plane resistivity (ρc) was found to be greater than the in-plane resistivity by about three orders of magnitude. The magnitude and temperature dependence of the cross-plane conductivity of LSMO/LMO superlattices suggests the presence of a barrier with the effective barrier height of ˜300 meV. Although the magnitude of the cross-plane power factor is too low for thermoelectric applications by a factor of approximately 10-4—in part because the growth conditions chosen for this study yielded relatively high resistivity films—the temperature dependence of the resistivity and the potential for tuning the power factor by engineering strain, oxygen stoichiometry, and electronic band structure suggest that these epitaxial metal/semiconductor superlattices are deserving of further investigation.

Effect of Structural Relaxation on the In-Plane Electrical Resistance of Oxygen-Underdoped ReBaCuO (Re = Y, Ho) Single Crystals

NASA Astrophysics Data System (ADS)

Vovk, Ruslan V.; Vovk, Nikolaj R.; Dobrovolskiy, Oleksandr V.

2014-05-01

The effect of jumpwise temperature variation and room-temperature storing on the basal-plane electrical resistivity of underdoped ReBaCuO (Re = Y, Ho) single crystals is investigated. Reducing the oxygen content has been revealed to lead to the phase segregation accompanied by both, labile component diffusion and structural relaxation in the sample volume. Room-temperature storing of single crystals with different oxygen hypostoichiometries leads to a substantial widening of the rectilinear segment in in conjunction with a narrowing of the temperature range of existence of the pseudogap state. It is established that the excess conductivity obeys an exponential law in a broad temperature range, while the pseudogap's temperature dependence is described satisfactory in the framework of the BCS-BEC crossover theory. Substituting yttrium with holmium essentially effects the charge distribution and the effective interaction in CuO planes, thereby stimulating disordering processes in the oxygen subsystem. This is accompanied by a notable shift of the temperature zones corresponding to transitions of the metal-insulator type and to the regime of manifestation of the pseudogap anomaly.

Electrical conductivity and magnetic field dependent current-voltage characteristics of nanocrystalline nickel ferrite

NASA Astrophysics Data System (ADS)

Ghosh, P.; Bhowmik, R. N.; Das, M. R.; Mitra, P.

2017-04-01

We have studied the grain size dependent electrical conductivity, dielectric relaxation and magnetic field dependent current voltage (I - V) characteristics of nickel ferrite (NiFe2O4) . The material has been synthesized by sol-gel self-combustion technique, followed by ball milling at room temperature in air environment to control the grain size. The material has been characterized using X-ray diffraction (refined with MAUD software analysis) and Transmission electron microscopy. Impedance spectroscopy and I - V characteristics in the presence of variable magnetic fields have confirmed the increase of resistivity for the fine powdered samples (grain size 5.17±0.6 nm), resulted from ball milling of the chemical routed sample. Activation energy of the material for electrical charge hopping process has increased with the decrease of grain size by mechanical milling of chemical routed sample. The I - V curves showed many highly non-linear and irreversible electrical features, e.g., I - V loop and bi-stable electronic states (low resistance state-LRS and high resistance state-HRS) on cycling the electrical bias voltage direction during I-V curve measurement. The electrical dc resistance for the chemically routed (without milled) sample in HRS (∼3.4876×104 Ω) at 20 V in presence of magnetic field 10 kOe has enhanced to ∼3.4152×105 Ω for the 10 h milled sample. The samples exhibited an unusual negative differential resistance (NDR) effect that gradually decreased on decreasing the grain size of the material. The magneto-resistance of the samples at room temperature has been found substantially large (∼25-65%). The control of electrical charge transport properties under magnetic field, as observed in the present ferrimagnetic material, indicate the magneto-electric coupling in the materials and the results could be useful in spintronics applications.

Structural, magnetic and magnetocaloric properties of Co-doped nanocrystalline La0.7Te0.3Mn0.7Co0.3O3

NASA Astrophysics Data System (ADS)

Meenakshi; Kumar, Amit; Mahato, Rabindra Nath

2018-02-01

Structural, magnetic and magnetocaloric properties of the nanocrystalline La0.7Te0.3Mn0.7Co0.3O3 perovskite manganite were investigated. X-ray diffraction pattern indicated that the nanocrystalline sample crystallized in orthorhombic crystal structure with Pbnm space group. The average particle size was calculated using scanning electron microscope and it was found to be ∼150 nm. Temperature dependence magnetization measurements revealed ferromagnetic-paramagnetic phase transition and the Curie temperature (TC) was found to be ∼201 K. Field dependence magnetization showed the hysteresis at low temperature with a coercive field of ∼0.34 T and linear dependence at high temperature corresponds to paramagnetic region. Based on the magnetic field dependence magnetization data, the maximum entropy change and relative cooling power (RCP) were estimated and the values were 1.002 J kg-1 K-1 and 90 J kg-1 for a field change of 5 T respectively. Temperature dependent resistivity ρ(T) data exhibited semiconducting-like behavior at high temperature and the electrical transport was well explained by Mott's variable-range hopping (VRH) conduction mechanism in the temperature range of 250 K-300 K. Using the VRH fit, the calculated hoping distance (Rh) at 300 K was 54.4 Å and density of states N(EF) at room temperature was 7.04 × 1018 eV-1 cm-3. These values were comparable to other semiconducting oxides.

Topological Defects in Double Exchange Materials and Anomalous Hall Resistance.

NASA Astrophysics Data System (ADS)

Calderón, M. J.; Brey, L.

2000-03-01

Recently it has been proposed that the anomalous Hall effect observed in Double Exchange materials is due to Berry phase effects caused by carrier hopping in a nontrivial spins background (J.Ye et al.) Phys.Rev.Lett. 83, 3737 1999.In order to study this possibility we have performed Monte Carlo simulations of the Double Exchange model and we have computed, as a function of the temperature, the number of topological defects in the system and the internal gauge magnetic field associated with these defects. In the simplest Double Exchange model the gauge magnetic field is random, and its average value is zero. The inclusion in the problem of spin-orbit coupling privileges the opposite direction of the magnetization and an anomalous Hall resistance (AHR) effect arises. We have computed the AHR, and we have obtained its temperature dependence. In agreement with previous experiments we obtain that AHR increases exponentially at low temperature and presents a maximum at a temperature slightly higher than the critical temperature.

Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

DOE PAGES

Ji, Shiqi; Zheng, Sheng; Wang, Fei; ...

2017-07-06

The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simplemore » behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.« less

Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Shiqi; Zheng, Sheng; Wang, Fei

The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simplemore » behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.« less

Acoustical and thermo physical properties of metal-ceramics composites in dependence on few volume concentration of metal

NASA Astrophysics Data System (ADS)

Abramovich, A.

2016-04-01

Metal-ceramics composites (cermets) are modern construction material used in different industry branches. Their strength and heat resistance depend on elastic and thermos physical properties. In this work cermets based on corundum and stainless steel (sintered in high vacuum at temperatures 1500 - 1600°C) are investigated. The volume steel concentration in the samples varies up 2 to 20 vol %. The elastic modules were measured by ultrasonic method at room temperature, measuring of thermo conductivity coefficient were carried out at temperatures 100, 200°C by method of continued heating in adiabatic calorimeter. We founded appearance of two extremes on dependences of elastic modules (E, G) on stainless steel concentrations, nature of which is unknown, modules values change in range: E = 110 - 310, G = 60 - 130GPa (for different temperatures of sintering). Similar dependence is observed for thermo conductivity coefficient which values varies up 10 to 40 W/(m.K). There is presented also discussion of results based on structure cermet model as multiphase micro heterogeneous media with isotropic physical properties in the work.

Atomistic study of the electronic contact resistivity between the half-Heusler alloys (HfCoSb, HfZrCoSb, HfZrNiSn) and the metal Ag

NASA Astrophysics Data System (ADS)

He, Yuping; Léonard, François; Spataru, Catalin D.

2018-06-01

Half-Heusler (HH) alloys have shown promising thermoelectric properties in the medium- and high-temperature range. To harness these material properties for thermoelectric applications, it is important to realize electrical contacts with low electrical contact resistivity. However, little is known about the detailed structural and electronic properties of such contacts and the expected values of contact resistivity. Here, we employ atomistic ab initio calculations to study electrical contacts in a subclass of HH alloys consisting of the compounds HfCoSb, HfZrCoSb, and HfZrNiSn. By using Ag as a prototypical metal, we show that the termination of the HH material critically determines the presence or absence of strong deformations at the interface. Our study includes contacts to doped materials, and the results indicate that the p -type materials generally form ohmic contacts while the n -type materials have a small Schottky barrier. We calculate the temperature dependence of the contact resistivity in the low- to medium-temperature range and provide quantitative values that set lower limits for these systems.

Cost of resistance to trematodes in freshwater snail populations with low clonal diversity.

PubMed

Dagan, Yael; Kosman, Evsey; Ben-Ami, Frida

2017-12-13

The persistence of high genetic variability in natural populations garners considerable interest among ecologists and evolutionary biologists. One proposed hypothesis for the maintenance of high levels of genetic diversity relies on frequency-dependent selection imposed by parasites on host populations (Red Queen hypothesis). A complementary hypothesis suggests that a trade-off between fitness costs associated with tolerance to stress factors and fitness costs associated with resistance to parasites is responsible for the maintenance of host genetic diversity. The present study investigated whether host resistance to parasites is traded off with tolerance to environmental stress factors (high/low temperatures, high salinity), by comparing populations of the freshwater snail Melanoides tuberculata with low vs. high clonal diversity. Since polyclonal populations were found to be more parasitized than populations with low clonal diversity, we expected them to be tolerant to environmental stress factors. We found that clonal diversity explained most of the variation in snail survival under high temperature, thereby suggesting that tolerance to high temperatures of clonally diverse populations is higher than that of populations with low clonal diversity. Our results suggest that resistance to parasites may come at a cost of reduced tolerance to certain environmental stress factors.

Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO2/Pt crossbar array structure

NASA Astrophysics Data System (ADS)

Kim, Hyung Jun; Park, Daehoon; Yang, Paul; Beom, Keonwon; Kim, Min Ju; Shin, Chansun; Kang, Chi Jung; Yoon, Tae-Sik

2018-06-01

A crossbar array of Pt/CeO2/Pt memristors exhibited the synaptic characteristics such as analog, reversible, and strong resistance change with a ratio of ∼103, corresponding to wide dynamic range of synaptic weight modulation as potentiation and depression with respect to the voltage polarity. In addition, it presented timing-dependent responses such as paired-pulse facilitation and the short-term to long-term memory transition by increasing amplitude, width, and repetition number of voltage pulse and reducing the interval time between pulses. The memory loss with a time was fitted with a stretched exponential relaxation model, revealing the relation of memory stability with the input stimuli strength. The resistance change was further enhanced but its stability got worse as increasing measurement temperature, indicating that the resistance was changed as a result of voltage- and temperature-dependent electrical charging and discharging to alter the energy barrier for charge transport. These detailed synaptic characteristics demonstrated the potential of crossbar array of Pt/CeO2/Pt memristors as artificial synapses in highly connected neuron-synapse network.

Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO2/Pt crossbar array structure.

PubMed

Kim, Hyung Jun; Park, Daehoon; Yang, Paul; Beom, Keonwon; Kim, Min Ju; Shin, Chansun; Kang, Chi Jung; Yoon, Tae-Sik

2018-06-29

A crossbar array of Pt/CeO 2 /Pt memristors exhibited the synaptic characteristics such as analog, reversible, and strong resistance change with a ratio of ∼10 3 , corresponding to wide dynamic range of synaptic weight modulation as potentiation and depression with respect to the voltage polarity. In addition, it presented timing-dependent responses such as paired-pulse facilitation and the short-term to long-term memory transition by increasing amplitude, width, and repetition number of voltage pulse and reducing the interval time between pulses. The memory loss with a time was fitted with a stretched exponential relaxation model, revealing the relation of memory stability with the input stimuli strength. The resistance change was further enhanced but its stability got worse as increasing measurement temperature, indicating that the resistance was changed as a result of voltage- and temperature-dependent electrical charging and discharging to alter the energy barrier for charge transport. These detailed synaptic characteristics demonstrated the potential of crossbar array of Pt/CeO 2 /Pt memristors as artificial synapses in highly connected neuron-synapse network.

Post-exercise recovery of contractile function and endurance in humans and mice is accelerated by heating and slowed by cooling skeletal muscle.

PubMed

Cheng, Arthur J; Willis, Sarah J; Zinner, Christoph; Chaillou, Thomas; Ivarsson, Niklas; Ørtenblad, Niels; Lanner, Johanna T; Holmberg, Hans-Christer; Westerblad, Håkan

2017-12-15

We investigated whether intramuscular temperature affects the acute recovery of exercise performance following fatigue-induced by endurance exercise. Mean power output was better preserved during an all-out arm-cycling exercise following a 2 h recovery period in which the upper arms were warmed to an intramuscular temperature of ̴ 38°C than when they were cooled to as low as 15°C, which suggested that recovery of exercise performance in humans is dependent on muscle temperature. Mechanisms underlying the temperature-dependent effect on recovery were studied in intact single mouse muscle fibres where we found that recovery of submaximal force and restoration of fatigue resistance was worsened by cooling (16-26°C) and improved by heating (36°C). Isolated whole mouse muscle experiments confirmed that cooling impaired muscle glycogen resynthesis. We conclude that skeletal muscle recovery from fatigue-induced by endurance exercise is impaired by cooling and improved by heating, due to changes in glycogen resynthesis rate. Manipulation of muscle temperature is believed to improve post-exercise recovery, with cooling being especially popular among athletes. However, it is unclear whether such temperature manipulations actually have positive effects. Accordingly, we studied the effect of muscle temperature on the acute recovery of force and fatigue resistance after endurance exercise. One hour of moderate-intensity arm cycling exercise in humans was followed by 2 h recovery in which the upper arms were either heated to 38°C, not treated (33°C), or cooled to ∼15°C. Fatigue resistance after the recovery period was assessed by performing 3 × 5 min sessions of all-out arm cycling at physiological temperature for all conditions (i.e. not heated or cooled). Power output during the all-out exercise was better maintained when muscles were heated during recovery, whereas cooling had the opposite effect. Mechanisms underlying the temperature-dependent effect on recovery were tested in mouse intact single muscle fibres, which were exposed to ∼12 min of glycogen-depleting fatiguing stimulation (350 ms tetani given at 10 s interval until force decreased to 30% of the starting force). Fibres were subsequently exposed to the same fatiguing stimulation protocol after 1-2 h of recovery at 16-36°C. Recovery of submaximal force (30 Hz), the tetanic myoplasmic free [Ca 2+ ] (measured with the fluorescent indicator indo-1), and fatigue resistance were all impaired by cooling (16-26°C) and improved by heating (36°C). In addition, glycogen resynthesis was faster at 36°C than 26°C in whole flexor digitorum brevis muscles. We conclude that recovery from exhaustive endurance exercise is accelerated by raising and slowed by lowering muscle temperature. © 2017 The Authors. The Journal of Physiology © 2017 The Physiological Society.

Self-assembled patches in PtSi/n-Si (111) diodes

NASA Astrophysics Data System (ADS)

Afandiyeva, I. M.; Altιndal, Ş.; Abdullayeva, L. K.; Bayramova, A. İ.

2018-05-01

Using the effect of the temperature on the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of PtSi/n-Si (111) Schottky diodes the profile of apparent doping concentration (N Dapp), the potential difference between the Fermi energy level and the bottom of the conduction band (V n), apparent barrier height (Φ Bapp), series resistance (R s) and the interface state density N ss have been investigated. From the temperature dependence of (C–V) it was found that these parameters are non-uniformly changed with increasing temperature in a wide temperature range of 79–360 K. The voltage and temperature dependences of apparent carrier distribution we attributed to the existence of self-assembled patches similar the quantum wells, which formed due to the process of PtSi formation on semiconductor and the presence of hexagonal voids of Si (111).

Temperature- and Bias-Dependence of Magnetoresistance in Doped Manganite Thin Film Trilayer Junctions

NASA Astrophysics Data System (ADS)

Sun, J. Z.; Xiao, Gang

1998-03-01

Large low-field magnetoresistance, up to a factor of five change in resistance, was observed in trilayer junctions formed by epitaxial thin films of La_0.67Sr_0.33 MnO3 - SrTiO3 - La_0.67Sr_0.33MnO3 at 4.2K and 100 Oe. Such magnetoresistance decreases with increasing sample temperature, and disappears for temperatures above 150K. The magnetoresistance also decreases upon increasing bias voltage across the junction. We present systematic experimental studies of both temperature and bias-dependence. These results in manganite trilayer junctions at low temperatures are similar to what has been observed in metallic trilayer magnetic tunneling valves, and are qualitatively consistent with the interface magnon excitation model proposed by Zhang et al.(S. Zhang, P. M. Levy, A. C. Marley and S. S. P. Parkin, Phys. Rev. Lett. 79), 3744 (1997).

Thermoelectric power of PrMg3

NASA Astrophysics Data System (ADS)

Isikawa, Yosikazu; Somiya, Kazuya; Koyanagi, Huruto; Mizushima, Toshio; Kuwai, Tomohiko; Tayama, Takashi

2010-01-01

PrMg3 is supposed to be one of the strongly correlated electron systems originated from the hybridization between the Pr 4f and conduction electrons, because the gigantic electronic specific heat coefficient C/T was observed at low temperatures. However, a typical behaviour of - ln T dependence was not observed in the temperature dependence of the electrical resistivity. The thermoelectric power S is a powerful tool to investigate the density of states at the Fermi energy. We measured carefully the thermoelectric power of PrMg3 in the temperature range between 2 and 300 K. S is extremely small, ranged within ±1 μV/K over the whole temperature. The value of S/T at low temperature limit was also significantly smaller than expected from the specific heat results. We therefore conclude that the density of state at the Fermi level is not enhanced in PrMg3.

Gel phase in hydrated calcium dipicolinate

NASA Astrophysics Data System (ADS)

Rajak, Pankaj; Mishra, Ankit; Sheng, Chunyang; Tiwari, Subodh; Krishnamoorthy, Aravind; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

2017-11-01

The mineralization of dipicolinic acid (DPA) molecules in bacterial spore cores with Ca2+ ions to form Ca-DPA is critical to the wet-heat resistance of spores. This resistance to "wet-heat" also depends on the physical properties of water and DPA in the hydrated Ca-DPA-rich protoplasm. Using reactive molecular dynamics simulations, we have determined the phase diagram of hydrated Ca-DPA as a function of temperature and water concentration, which shows the existence of a gel phase along with distinct solid-gel and gel-liquid phase transitions. Simulations reveal monotonically decreasing solid-gel-liquid transition temperatures with increasing hydration, which explains the experimental trend of wet-heat resistance of bacterial spores. Our observation of different phases of water also reconciles previous conflicting experimental findings on the state of water in bacterial spores. Further comparison with an unmineralized hydrated DPA system allows us to quantify the importance of Ca mineralization in decreasing diffusivity and increasing the heat resistance of the spore.

Thermally activated hysteresis in high quality graphene/h-BN devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cadore, A. R., E-mail: alissoncadore@gmail.com, E-mail: lccampos@fisica.ufmg.br; Mania, E.; Lacerda, R. G.

2016-06-06

We report on gate hysteresis of resistance in high quality graphene/hexagonal boron nitride (h-BN) devices. We observe a thermally activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375 K. In order to investigate the origin of the hysteretic phenomenon, we compare graphene/h-BN heterostructure devices with SiO{sub 2}/Si back gate electrodes to devices with graphite back gate electrodes. The gate hysteretic behavior of the resistance is present only in devices with an h-BN/SiO{sub 2} interface and is dependent on the orientation of the applied gate electric field and sweep rate. We describe a phenomenologicalmore » model which captures all of our findings based on charges trapped at the h-BN/SiO{sub 2} interface. Such hysteretic behavior in graphene resistance must be considered in high temperature applications for graphene devices and may open new routes for applications in digital electronics and memory devices.« less

Transient, heat-induced thermal resistance in the small intestine of mouse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hume, S.P.; Marigold, J.C.L.

Heat-induced thermal resistance has been investigated in mouse jejunum by assaying crypt survival 24 h after treatment. Hyperthermia was achieved by immersing an exteriorized loop of intestine in a bath of Krebs-Ringer solution. Two approaches have been used. In the first, thermal survival curves were obtained following single hyperthermal treatments at temperatures in the range 42 to 44/sup 0/C. Transient thermal resistance, inducted by a plateau in the crypt survival curve, developed during heating at temperatures around 42.5/sup 0/C after 60 to 80 min. In the second series of experiments, a priming heat treatment (40.0, 41.0, 41.5, or 42.0/sup 0/Cmore » for 60 min) was followed at varying intervals by a test treatment at 43.0/sup 0/C. A transient resistance to the second treatment was induced, the extent and time of development being dependent upon the priming treatment. Crypt survival curves for thermally resistant intestine showed an increase in thermal D/sub 0/ and a decrease in n compared with curves from previously unheated intestine.« less

Temperature-induced Lifshitz transition in WTe 2

DOE PAGES

Wu, Yun; Jo, Na Hyun; Ochi, Masayuki; ...

2015-10-12

In this study, we use ultrahigh resolution, tunable, vacuum ultraviolet laser-based, angle-resolved photoemission spectroscopy (ARPES), temperature- and field-dependent resistivity, and thermoelectric power (TEP) measurements to study the electronic properties of WTe 2, a compound that manifests exceptionally large, temperature-dependent magnetoresistance. The Fermi surface consists of two pairs of electron and two pairs of hole pockets along the X–Γ–X direction. Using detailed ARPES temperature scans, we find a rare example of a temperature-induced Lifshitz transition at T≃160 K, associated with the complete disappearance of the hole pockets. Our electronic structure calculations show a clear and substantial shift of the chemical potentialmore » μ(T) due to the semimetal nature of this material driven by modest changes in temperature. This change of Fermi surface topology is also corroborated by the temperature dependence of the TEP that shows a change of slope at T≈175 K and a breakdown of Kohler’s rule in the 70–140 K range. Our results and the mechanisms driving the Lifshitz transition and transport anomalies are relevant to other systems, such as pnictides, 3D Dirac semimetals, and Weyl semimetals.« less

Ultrafast electronic relaxation in superheated bismuth

NASA Astrophysics Data System (ADS)

Gamaly, E. G.; Rode, A. V.

2013-01-01

Interaction of moving electrons with vibrating ions in the lattice forms the basis for many physical properties from electrical resistivity and electronic heat capacity to superconductivity. In ultrafast laser interaction with matter the electrons are heated much faster than the electron-ion energy equilibration, leading to a two-temperature state with electron temperature far above that of the lattice. The rate of temperature equilibration is governed by the strength of electron-phonon energy coupling, which is conventionally described by a coupling constant, neglecting the dependence on the electron and lattice temperature. The application of this constant to the observations of fast relaxation rate led to a controversial notion of ‘ultra-fast non-thermal melting’ under extreme electronic excitation. Here we provide theoretical grounds for a strong dependence of the electron-phonon relaxation time on the lattice temperature. We show, by taking proper account of temperature dependence, that the heating and restructuring of the lattice occurs much faster than were predicted on the assumption of a constant, temperature independent energy coupling. We applied the temperature-dependent momentum and energy transfer time to experiments on fs-laser excited bismuth to demonstrate that all the observed ultra-fast transformations of the transient state of bismuth are purely thermal in nature. The developed theory, when applied to ultrafast experiments on bismuth, provides interpretation of the whole variety of transient phase relaxation without the non-thermal melting conjecture.

Flux flow induced microwave absorption in high temperature superconductor Bi 2-XPb XSr 2Ca N-1Cu NO 4+2N

NASA Astrophysics Data System (ADS)

Owens, F. J.

1990-12-01

Direct measurements of microwave absorption without use of rf H field modulation in granular composites of the 115 K superconductor Bi 2-XPb XSr 2Ca N-1Cu NO 4+2N as a function of magnetic field above 0.1 T reveal a continuing increase of absorption of microwave energy increasing magnetic field. The temperature and magnetic field dependence of the absorption are very different from the low magnetic field (<0.01 T) absorption arising from weak links in the material. The magnetic field and temperature dependence are consistent with the behavior of thermally activated flux flow resistance suggesting the absorption is due to flux creep.

Fundamental properties of a new samarium compound SmPtSi2

NASA Astrophysics Data System (ADS)

Yamaguchi, Shuto; Takahashi, Eisuke; Kase, Naoki; Nakano, Tomohito; Takeda, Naoya; Matsubayashi, Kazuyuki; Uwatoko, Yoshiya

2018-05-01

We have discovered a new orthorhombic ternary compound SmPtSi2. We succeeded in growing a single crystal of SmPtSi2; prepared a polycrystalline sample of this compound, and measured their　susceptibility, specific heat, and resistivity. The temperature dependence of susceptibility of the polycrystalline sample is close to that of Sm3+ at high temperatures, and its specific heat shows anomalies at TH = 8.6 K and TL = 5.6 K. The resistivity of a single crystal of SmPtSi2 shows a hump-type anomaly just below TH and a sudden decrease at TL, indicating that these anomalies are intrinsic and that SmPtSi2 exhibits a two-step transition.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bestwick, A. J.; Fox, E. J.; Kou, Xufeng

In this study, we report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in the Hall resistance to within a part per 10,000 and a longitudinal resistivity under 1 Ω per square, with chiral edge transport explicitly confirmed by nonlocal measurements. Deviations from this behavior are found to be caused by thermally activated carriers, as indicated by an Arrhenius law temperature dependence. Using the deviations as a thermometer, we demonstrate an unexpected magnetocaloric effect and use it to reach near-perfect quantization bymore » cooling the sample below the dilution refrigerator base temperature in a process approximating adiabatic demagnetization refrigeration.« less

Anomalous negative magnetoresistance of two-dimensional electrons

NASA Astrophysics Data System (ADS)

Kanter, Jesse; Vitkalov, Sergey; Bykov, A. A.

2018-05-01

Effects of temperature T (6-18 K) and variable in situ static disorder on dissipative resistance of two-dimensional electrons are investigated in GaAs quantum wells placed in a perpendicular magnetic-field B⊥. Quantum contributions to the magnetoresistance, leading to quantum positive magnetoresistance (QPMR), are separated by application of an in-plane magnetic field. QPMR decreases considerably with both the temperature and the static disorder and is in good quantitative agreement with theory. The remaining resistance R decreases with the magnetic field exhibiting an anomalous polynomial dependence on B⊥:[R (B⊥) -R (0 ) ] =A (T ,τq) B⊥η where the power is η ≈1.5 ±0.1 in a broad range of temperatures and disorder. The disorder is characterized by electron quantum lifetime τq. The scaling factor A (T ,τq) ˜[κ(τq) +β (τq) T2] -1 depends significantly on both τq and T where the first term κ ˜τq-1/2 decreases with τq. The second term is proportional to the square of the temperature and diverges with increasing static disorder. Above a critical disorder the anomalous magnetoresistance is absent, and only a positive magnetoresistance, exhibiting no distinct polynomial behavior with the magnetic field, is observed. The presented model accounts memory effects and yields η = 3/2.

Dielectric and impedance study of praseodymium substituted Mg-based spinel ferrites

NASA Astrophysics Data System (ADS)

Farid, Hafiz Muhammad Tahir; Ahmad, Ishtiaq; Ali, Irshad; Ramay, Shahid M.; Mahmood, Asif; Murtaza, G.

2017-07-01

Spinel ferrites with nominal composition MgPryFe2-yO4 (y = 0.00, 0.025, 0.05, 0.075, 0.10) were prepared by sol-gel method. Temperature dependent DC electrical conductivity and drift mobility were found in good agreement with each other, reflecting semiconducting behavior. The dielectric properties of all the samples as a function of frequency (1 MHz-3 GHz) were measured at room temperature. The dielectric constant and complex dielectric constant of these samples decreased with the increase of praseodymium concentration. In the present spinel ferrite, Cole-Cole plots were used to separate the grain and grain boundary's effects. The substitution of praseodymium ions in Mg-based spinel ferrites leads to a remarkable rise of grain boundary's resistance as compared to the grain's resistance. As both AC conductivity and Cole-Cole plots are the functions of concentration, they reveal the dominant contribution of grain boundaries in the conduction mechanism. AC activation energy was lower than dc activation energy. Temperature dependence normalized AC susceptibility of spinel ferrites reveals that MgFe2O4 exhibits multi domain (MD) structure with high Curie temperature while on substitution of praseodymium, MD to SD transitions occurs. The low values of conductivity and low dielectric loss make these materials best candidate for high frequency application.

An Electrochemistry Study of Cryoelectrolysis in Frozen Physiological Saline.

PubMed

Manuel, Thomas J; Munnangi, Pujita; Rubinsky, Boris

2017-07-01

Cryoelectrolysis is a new minimally invasive tissue ablation surgical technique that combines the processes of electrolysis and solid/liquid phase transformation (freezing). This study investigated this new technique by measuring the pH front propagation and the changes in resistance in a tissue simulant made of physiological saline gel with a pH dye as a function of the sample temperature in the high subzero range above the eutectic. Results demonstrated that effective electrolysis can occur in a high subzero freezing milieu and that the propagation of the pH front is only weakly dependent on temperature. These observations are consistent with a mechanism involving ionic movement through the concentrated saline solution channels between ice crystals at subfreezing temperatures above the eutectic. Moreover, results suggest that Joule heating in these microchannels may cause local microscopic melting, the observed weak dependence of pH front propagation on temperature, and the large changes in resistance with time. A final insight provided by the results is that the pH front propagation from the anode is more rapid than from the cathode, a feature indicative of the electro-osmotic flow from the cathode to the anode. The findings in this paper may be critical for designing future cryoelectrolytic ablation surgery protocols.

Electrical properties of thermoelectric cobalt Ca3Co4O9 epitaxial heterostructures

NASA Astrophysics Data System (ADS)

Guo, Haizhong; Wang, Shufang; Wang, Le; Jin, Kui-juan; Chen, Shanshan; Fu, Guangsheng; Ge, Chen; Lu, Huibin; Wang, Can; He, Meng; Yang, Guozhen

2013-03-01

Heterostructures fabricated from layered cobalt oxides offer substantial advantages for thermoelectric applications. C-axis-oriented Ca3Co4O9 (CCO) thin films on SrTiO3 substrates and Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunctions were fabricated by pulsed laser deposition. The measurements of in-plane resistivity, thermopower, and magnetic properties performed on the Ca3Co4O9 thin films were found to be comparable to ab-plane those of the single crystals due to good orientation of the films. The temperature dependence of the electrical transport properties of Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunction was also investigated. The junction shows two distinctive transport mechanisms at different temperature regimes under forward bias: tunneling across the Schottky barrier in the temperature range of 100-380 K, and tunneling mechanism at low bias and thermal emission mechanism at high bias between 10 and 100 K. However, for the case of low reverse bias, the trap assisted tunneling process should be considered for the leakage current. Negative magnetoresistance effect is observed at low temperatures, related to the electron spin-dependent scattering and the interface resistance of the heterostructures.

[The participation of the transport-barrier functions of the plasma membrane in the development of fluoroquinolone (ciprofloxacin) resistance in Acholeplasma laidlawii].

PubMed

Abramycheva, N Iu; Govorun, V M

2000-01-01

The role of transport activity of Acholeplasma laidlawii plasmatic membrane in the development of resistance to ciprofloxacin was investigated. It was shown that ethidium bromide used as fluoroquinolone analogue in plasmatic membrane efflux pump was accumulated in ciprofloxacin-resistant cells in much less amount. It was estimated that ethidium bromide efflux depended on temperature, glucose and transmembrane electro-chemical proton potential. Inhibitors of efflux systems--reserpine and verapamil enhanced the ethidium bromide accumulation much more intensively in ciprofloxacin resistant cells. The results of investigation allowed to consider the existence of active efflux system for toxic agents in acholeplasma; in the case of ciprofloxacin-resistant strain these systems are inducible.

Tuning the resistive switching properties of TiO2-x films

NASA Astrophysics Data System (ADS)

Ghenzi, N.; Rozenberg, M. J.; Llopis, R.; Levy, P.; Hueso, L. E.; Stoliar, P.

2015-03-01

We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, J.; Bugaris, D. E.; Xiao, Z. L.

We report the occurrence of reentrantmetallic behavior in theWeyl semimetal NbP. When the appliedmagnetic field H is above a critical value H-c, a reentrance appears as a peak in the temperature-dependent resistivity rho(xx) (T) at T = T-p, similar to that observed in graphite where it was attributed to local superconductivity. The Tp(H) relationship follows a power-law dependence T-p similar to (H-H-c)(1/nu) where. can be derived from the temperature dependence of the zero-field resistivity rho(0)(T) similar to T-nu. From concurrent measurements of the transverse rho(xx) (T) and Hall rho(xy)(T) magnetoresistivities, we reveal a clear correlation between the rapidly increasing rho(xy)more » (T) and the occurrence of a peak in the rho(xx) (T) curve. Quantitative analysis indicates that the reentrantmetallic behavior arises from the competition of the magnetoconductivity sigma(xx) (T) with an additional component Delta sigma(xx) (T) = kappa(H)sigma(xx)(T) where kappa(H) = [rho(xy)(T)/rho(xx)(T)](2) is the Hall factor. We find that the Hall factor (kappa(H) approximate to 0.4) at peak temperature T-p is nearly field independent, leading to the observed T-p (H) relationship. Furthermore, the reentrant metallic behavior in rho(xx) (T) also is reflected in the behavior of rho(xx) (H) that ranges from nonsaturating at T > 70K to saturation at liquid-helium temperatures. The latter can be explained with the magnetic field dependence of the Hall factor kappa(H) (H). Our paper demonstrates that a semiclassical theory can account for the "anomalies" in the magnetotransport phenomena of NbP without invoking an exotic mechanism.« less

Modeling and experimental result analysis for high-power VECSELs

NASA Astrophysics Data System (ADS)

Zakharian, Aramais R.; Hader, Joerg; Moloney, Jerome V.; Koch, Stephan W.; Lutgen, Stephan; Brick, Peter; Albrecht, Tony; Grotsch, Stefan; Luft, Johann; Spath, Werner

2003-06-01

We present a comparison of experimental and microscopically based model results for optically pumped vertical external cavity surface emitting semiconductor lasers. The quantum well gain model is based on a quantitative ab-initio approach that allows calculation of a complex material susceptibility dependence on the wavelength, carrier density and lattice temperature. The gain model is coupled to the macroscopic thermal transport, spatially resolved in both the radial and longitudinal directions, with temperature and carrier density dependent pump absorption. The radial distribution of the refractive index and gain due to temperature variation are computed. Thermal managment issues, highlighted by the experimental data, are discussed. Experimental results indicate a critical dependence of the input power, at which thermal roll-over occurs, on the thermal resistance of the device. This requires minimization of the substrate thickness and optimization of the design and placement of the heatsink. Dependence of the model results on the radiative and non-radiative carrier recombination lifetimes and cavity losses are evaluated.

Effect of annealing and In content on the properties of electron beam evaporated ZnO films

NASA Astrophysics Data System (ADS)

Mohamed, S. H.; Ali, H. M.; Mohamed, H. A.; Salem, A. M.

2005-08-01

The effect of both annealing and In content on the properties of ZnO films prepared by electron beam evaporation were investigated. The evaporation was carried out at room temperature from bulk samples prepared by sintering technique. X-ray diffraction showed that the structure of ZnO-In{2}O{3} films depends on both the In content and annealing temperature. Amorphous, highly transparent and relatively low resistive films which can be suitable for the usage as transparent electrode of organic light-emitting diode were obtained upon annealing at 300 circC. Partially crystalline, highly transparent and highly resistive films which can be used in piezoelectric applications were obtained upon annealing at 500 circC. For each composition the refractive index has no monotonic variation upon increasing annealing temperature.

Study of thermal stability of Cu{sub 2}Se thermoelectric material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bohra, Anil, E-mail: anilbohra786@gmail.com; Bhatt, Ranu; Bhattacharya, Shovit

2016-05-23

Sustainability of thermoelectric parameter in operating temperature range is a key consideration factor for fabricating thermoelectric generator or cooler. In present work, we have studied the stability of thermoelectric parameter of Cu{sub 2}Se within the temperature range of 50-800°C. Temperature dependent Seebeck coefficients and electrical resistivity measurement are performed under three continuous thermal cycles. X-ray diffraction pattern shows the presence of mixed cubic-monoclinic Cu{sub 2}Se phase in bare pellet which transforms to pure α-Cu{sub 2}Se phase with repeating thermal cycle. Significant enhancement in Seebeck coefficient and electrical resistivity is observed which may be attributed to (i) Se loss observed inmore » EDS and (ii) the phase transformation from mixed cubic-monoclinic structure to pure monoclinic α-Cu{sub 2}Se phase.« less

Variation of transition temperatures and residual resistivity ratio in vapor-grown FeSe

DOE PAGES

Böhmer, A. E.; Taufour, V.; Straszheim, W. E.; ...

2016-07-29

The study of the iron-based superconductor FeSe has blossomed with the availability of high-quality single crystals, obtained through flux/vapor-transport growth techniques below the structural transformation temperature of its tetragonal phase, T≈450°C. Here, we report on the variation of sample morphology and properties due to small modifications in the growth conditions. A considerable variation of the superconducting transition temperature T c, from 8.8 K to 3 K, which cannot be correlated with the sample composition, is observed. Instead, we point out a clear correlation between T c and disorder, as measured by the residual resistivity ratio. Notably, the tetragonal-to-orthorhombic structural transitionmore » is also found to be quite strongly disorder dependent (T s≈72–90K) and linearly correlated with T c.« less

Crystalline-gel-molten phase transitions of water in calcium dipicolinate (Ca-DPA)

NASA Astrophysics Data System (ADS)

Tiwari, Subodh; Mishra, Ankit; Sheng, Chunyang; Rajak, Pankaj; Kalia, Rajiv; Nakano, Aiichiro; Vashishta, Priya

The heat resistance of bacterial spores directly correlates to the protoplast dehydration and presence of dipicolinic acid (DPA) and its associated metal salts at the core. Bacteria's structural integrity in moist heat conferred by high concentration of DPA and calcium DPA salts depends on the properties are additional water molecules and temperature. In our reactive MD simulations, we characterize different possible phases and the transport properties of water molecules. We observed solid-gel and gel-liquid phase transitions of the hydrated Ca-DPA system. These simulations reveal monotonically decreasing solid-gel-liquid transition temperatures with increasing cell hydration, reflecting the experimental trend of moist-heat resistance of bacterial spores. We also observed that the calcification of bacterial spores further increases the transition temperatures. This research is supported by DTRA Grant No. HDTRA1-14-1-0074.

Anomalous physical properties of Heusler-type Co2Cr (Ga,Si) alloys and thermodynamic study on reentrant martensitic transformation

NASA Astrophysics Data System (ADS)

Xu, Xiao; Nagasako, Makoto; Kataoka, Mitsuo; Umetsu, Rie Y.; Omori, Toshihiro; Kanomata, Takeshi; Kainuma, Ryosuke

2015-03-01

Electronic, magnetic, and thermodynamic properties of Co2Cr(Ga,Si) -based shape-memory alloys, which exhibit reentrant martensitic transformation (RMT) behavior, were studied experimentally. For electric resistivity (ER), an inverse (semiconductor-like) temperature dependence in the parent phase was found, along with anomalous behavior below its Curie temperature. A pseudobinary phase diagram was determined, which gives a "martensite loop" clearly showing the reentrant behavior. Differential scanning calorimetry and specific-heat measurements were used to derive the entropy change Δ S between martensite and parent phases. The temperature dependence of the derived Δ S was analyzed thermodynamically to confirm the appearances of both the RMT and normal martensitic transformation. Detailed studies on the specific heat in martensite and parent phases at low temperatures were also conducted.

Misoriented grain boundaries vicinal to the (1 1 1) <1 1¯0> twin in nickel Part I: Thermodynamics & temperature-dependent structure

DOE PAGES

O’Brien, Christopher J.; Medlin, Douglas L.; Foiles, Stephen M.

2016-03-30

Here, grain boundary-engineered materials are of immense interest for their corrosion resistance, fracture resistance and microstructural stability. This work contributes to a larger goal of understanding both the structure and thermodynamic properties of grain boundaries vicinal (within ±30°) to the Σ3(1 1 1) <1 1¯0> (coherent twin) boundary which is found in grain boundary-engineered materials. The misoriented boundaries vicinal to the twin show structural changes at elevated temperatures. In the case of nickel, this transition temperature is substantially below the melting point and at temperatures commonly reached during processing, making the existence of such boundaries very likely in applications. Thus,more » the thermodynamic stability of such features is thoroughly investigated in order to predict and fully understand the structure of boundaries vicinal to twins. Low misorientation angle grain boundaries (|θ| ≲ 16°) show distinct ±1/3(1 1 1) disconnections which accommodate misorientation in opposite senses. The two types of disconnection have differing low-temperature structures which show different temperature-dependent behaviours with one type undergoing a structural transition at approximately 600 K. At misorientation angles greater than approximately ±16°, the discrete disconnection nature is lost as the disconnections merge into one another. Free energy calculations demonstrate that these high-angle boundaries, which exhibit a transition from a planar to a faceted structure, are thermodynamically more stable in the faceted configuration.« less

Realizing one-dimensional quantum and high-frequency transport features in aligned single-walled carbon nanotube ropes

NASA Astrophysics Data System (ADS)

Ncube, Siphephile; Chimowa, George; Chiguvare, Zivayi; Bhattacharyya, Somnath

2014-07-01

The superiority of the electronic transport properties of single-walled carbon nanotube (SWNT) ropes over SWNT mats is verified from low temperature and frequency-dependent transport. The overall change of resistance versus in nanotube mats shows that 3D variable range hopping is the dominant conduction mechanism within the 2-300 K range. The magneto-resistance (MR) is found to be predominantly negative with a parabolic nature, which can also be described by the hopping model. Although the positive upturn of the MR at low temperatures establishes the contribution from quantum interference, the inherent quantum transport in individual tubes is suppressed at elevated temperatures. Therefore, to minimize multi-channel effects from inter-tube interactions and other defects, two-terminal devices were fabricated from aligned SWNT (extracted from a mat) for low temperature transport as well as high-frequency measurements. In contrast to the mat, the aligned ropes exhibit step-like features in the differential conductance within the 80-300 K temperature range. The effects of plasmon propagation, unique to one dimension, were identified in electronic transport as a non-universal power-law dependence of the differential conductance on temperature and source-drain voltage. The complex impedance showed high power transmission capabilities up to 65 GHz as well as oscillations in the frequency range up to 30 GHz. The measurements suggest that aligned SWNT ropes have a realistic potential for high-speed device applications.

Method for Evaluating the Corrosion Resistance of Aluminum Metallization of Integrated Circuits under Multifactorial Influence

NASA Astrophysics Data System (ADS)

Kolomiets, V. I.

2018-03-01

The influence of complex influence of climatic factors (temperature, humidity) and electric mode (supply voltage) on the corrosion resistance of metallization of integrated circuits has been considered. The regression dependence of the average time of trouble-free operation t on the mentioned factors has been established in the form of a modified Arrhenius equation that is adequate in a wide range of factor values and is suitable for selecting accelerated test modes. A technique for evaluating the corrosion resistance of aluminum metallization of depressurized CMOS integrated circuits has been proposed.

Application of the two-film model to the volatilization of acetone and t-butyl alcohol from water as a function of temperature

USGS Publications Warehouse

Rathbun, R.E.; Tai, D.Y.

1988-01-01

The two-film model is often used to describe the volatilization of organic substances from water. This model assumes uniformly mixed water and air phases separated by thin films of water and air in which mass transfer is by molecular diffusion. Mass-transfer coefficients for the films, commonly called film coefficients, are related through the Henry's law constant and the model equation to the overall mass-transfer coefficient for volatilization. The films are modeled as two resistances in series, resulting in additive resistances. The two-film model and the concept of additivity of resistances were applied to experimental data for acetone and t-butyl alcohol. Overall mass-transfer coefficients for the volatilization of acetone and t-butyl alcohol from water were measured in the laboratory in a stirred constant-temperature bath. Measurements were completed for six water temperatures, each at three water mixing conditions. Wind-speed was constant at about 0.1 meter per second for all experiments. Oxygen absorption coefficients were measured simultaneously with the measurement of the acetone and t-butyl alcohol mass-transfer coefficients. Gas-film coefficients for acetone, t-butyl alcohol, and water were determined by measuring the volatilization fluxes of the pure substances over a range of temperatures. Henry's law constants were estimated from data from the literature. The combination of high resistance in the gas film for solutes with low values of the Henry's law constants has not been studied previously. Calculation of the liquid-film coefficients for acetone and t-butyl alcohol from measured overall mass-transfer and gas-film coefficients, estimated Henry's law constants, and the two-film model equation resulted in physically unrealistic, negative liquid-film coefficients for most of the experiments at the medium and high water mixing conditions. An analysis of the two-film model equation showed that when the percentage resistance in the gas film is large and the gas-film resistance approaches the overall resistance in value, the calculated liquid-film coefficient becomes extremely sensitive to errors in the Henry's law constant. The negative coefficients were attributed to this sensitivity and to errors in the estimated Henry's law constants. Liquid-film coefficients for the absorption of oxygen were correlated with the stirrer Reynolds number and the Schmidt number. Application of this correlation with the experimental conditions and a molecular-diffusion coefficient adjustment resulted in values of the liquid-film coefficients for both acetone and t-butyl alcohol within the range expected for all three mixing conditions. Comparison of Henry's law constants calculated from these film coefficients and the experimental data with the constants calculated from literature data showed that the differences were small relative to the errors reported in the literature as typical for the measurement or estimation of Henry's law constants for hydrophilic compounds such as ketones and alcohols. Temperature dependence of the mass-transfer coefficients was expressed in two forms. The first, based on thermodynamics, assumed the coefficients varied as the exponential of the reciprocal absolute temperature. The second empirical approach assumed the coefficients varied as the exponential of the absolute temperature. Both of these forms predicted the temperature dependence of the experimental mass-transfer coefficients with little error for most of the water temperature range likely to be found in streams and rivers. Liquid-film and gas-film coefficients for acetone and t-butyl alcohol were similar in value. However, depending on water mixing conditions, overall mass-transfer coefficients for acetone were from two to four times larger than the coefficients for t-butyl alcohol. This difference in behavior of the coefficients resulted because the Henry's law constant for acetone was about three times larger than that of

Sfp1 and Rtg3 reciprocally modulate carbon source‐conditional stress adaptation in the pathogenic yeast Candida albicans

PubMed Central

Kastora, Stavroula L.; Herrero‐de‐Dios, Carmen; Avelar, Gabriela M.; Munro, Carol A.

2017-01-01

Summary The pathogenicity of the clinically important yeast, Candida albicans, is dependent on robust responses to host‐imposed stresses. These stress responses have generally been dissected in vitro at 30°C on artificial growth media that do not mimic host niches. Yet host inputs, such as changes in carbon source or temperature, are known to affect C. albicans stress adaptation. Therefore, we performed screens to identify novel regulators that promote stress resistance during growth on a physiologically relevant carboxylic acid and at elevated temperatures. These screens revealed that, under these ‘non‐standard’ growth conditions, numerous uncharacterised regulators are required for stress resistance in addition to the classical Hog1, Cap1 and Cta4 stress pathways. In particular, two transcription factors (Sfp1 and Rtg3) promote stress resistance in a reciprocal, carbon source‐conditional manner. SFP1 is induced in stressed glucose‐grown cells, whereas RTG3 is upregulated in stressed lactate‐grown cells. Rtg3 and Sfp1 regulate the expression of key stress genes such as CTA4, CAP1 and HOG1 in a carbon source‐dependent manner. These mechanisms underlie the stress sensitivity of C. albicans sfp1 cells during growth on glucose, and rtg3 cells on lactate. The data suggest that C. albicans exploits environmentally contingent regulatory mechanisms to retain stress resistance during host colonisation. PMID:28574606

Thermal and electric properties of Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y)

NASA Technical Reports Server (NTRS)

Lim, Z. S.; Han, K. H.; Lee, Sung-Ik; Jeong, Yoon H.; Song, Y. S.; Park, Y. W.

1990-01-01

Electric resistivity, magnetic susceptibility, thermoelectric power, and Hall coefficient of Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y) whose onset temperature of the superconductivity are 24 K and 23 K were measured. Experimental results show many interesting features. In particular, the Hall coefficients are negative and relatively flat as a function of temperature. However, the temperature dependence of the thermoelectric power (TEP) for these two samples shows the positive sign for both samples in contrast to the previous results. Moreover TEP for both samples remains flat in the normal state below 250 K, but decreases rapidly above 250 K. TEP of only Pr(1.85)Ce(0.15)CuO(4-y) shows a peak near 50 K. Finally onset temperatures of sudden drop of TEP are higher than those of resistance drop. The physical properties of these samples produced at different conditions such as different heat treatment temperatures, atmospheres were also measured. TEP and resistance measurement show that oxygen deficiency is essential to produce better superconducting samples. Correlation between TEP and superconductivity for these different samples will be discussed.

Thermal and electric properties of Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y)

NASA Technical Reports Server (NTRS)

Lim, Z. S.; Han, K. H.; Lee, Sung-Ik; Jeong, Yoon H.; Song, Y. S.; Park, Y. W.

1991-01-01

Electric resistivity, magnetic susceptibility, thermoelectric power, and Hall coefficient of Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y) whose onset temperature of the superconductivity are 24 and 23 K were measured. Experimental results show many interesting features. In particular, the Hall coefficients are negative and relatively flat as a function of temperature. However, the temperature dependence of the thermoelectric power (TEP) for these two samples shows the positive sign for both samples in contrast to the previous results. Moreover, TEP for both samples remains flat in the normal state below 250 K, but decreases rapidly above 250 K. TEP of only Pr(1.85)Ce(0.15)CuO(4-y) shows a peak near 50 K. Finally, onset temperatures of sudden drop of TEP are higher than those of resistance drop. The physical properties of these samples produced at different conditions such as different heat treatment temperatures, atmospheres were also measured. TEP and resistance measurement show that oxygen deficiency is essential to produce better superconducting samples. Correlation between TEP and superconductivity for these different samples are discussed.

P-type hole mobility measurement in Na-doped BaSnO3

NASA Astrophysics Data System (ADS)

Hong, Sungyun; Jang, Yeaju; Park, Jisung; Char, Kookrin

P-type doping in oxide materials has been a difficult task because of the oxygen vacancies. Taking advantage of the excellent oxygen stability in BaSnO3 (BSO), we replaced Ba with Na in BSO to achieve p-type doping. Ba1-xNaxSnO3 (BNSO) films with varying dopant ratios were epitaxially grown by the pulsed laser deposition technique. We confirmed that the BNSO films were properly grown and determined their lattice constants with respect to the dopant ratio by x-ray diffraction. Due to the high resistance of the films at room temperature, we measured the transport properties of the BNSO films at temperatures ranging from 200 C to 400 C. Hall resistance measurements in a +/- 5 kG magnetic field were performed to confirm that the films are indeed p-type. As the temperature increased, the hole carrier concentration of the films increased while the film resistance decreased. The hole mobility values, in the tens of cm2/Vsec range, were found to decrease with the temperature. We will present the complete doping rate and temperature dependence of the hole mobility and compare their behavior with those of n-type La-doped BSO. Samsung science and technology foundation.

Influence of temperature on the electrical conductivity of leachate from municipal solid waste.

PubMed

Grellier, Solenne; Robain, Henri; Bellier, Gérard; Skhiri, Nathalie

2006-09-01

A bioreactor landfill is designed to manage municipal solid waste, through accelerated waste biodegradation, and stabilisation of the process by means of the controlled addition of liquid, i.e. leachate recirculation. The measurement of electrical resistivity by Electrical Resistivity Tomography (ERT) allows to monitor water content present in the bioreactors. Variations in electrical resistivity are linked to variations in moisture content and temperature. In order to overcome this ambiguity, two laboratory experiments were carried out to establish a relationship between temperature and electrical conductivity: the first set of measurements was made for leachate alone, whereas the second set was made with two different granular media saturated with leachate. Both experiments confirm a well known increase in conductivity of about 2% degrees C(-1). However, higher suspended matter concentrations lead to a lower dependence of electrical conductivity on temperature. Furthermore, for various porous media saturated with an identical leachate, the higher the specific surface of the granular matrix, the lower the effective bulk electrical conductivity. These observations show that a correct understanding of the electrical properties of liquids requires the nature and (in particular) the size of the electrical charge carriers to be taken into account.

Low Openness on the Revised NEO Personality Inventory as a Risk Factor for Treatment-Resistant Depression

PubMed Central

Takahashi, Michio; Shirayama, Yukihiko; Muneoka, Katsumasa; Suzuki, Masatoshi; Sato, Koichi; Hashimoto, Kenji

2013-01-01

Background Recently, we reported that low reward dependence, and to a lesser extent, low cooperativeness in the Temperature and Character Inventory (TCI) may be risk factors for treatment-resistant depression. Here, we analyzed additional psychological traits in these patients. Methods We administered Costa and McCrae's five-factor model personality inventory, NEO Personality Inventory-Revised (NEO-PI-R), to antidepressant-treatment resistant depressed patients (n = 35), remitted depressed patients (n = 27), and healthy controls (n = 66). We also evaluated the relationships between scores on NEO and TCI, using the same cohort of patients with treatment-resistant depression, as our previous study. Results Patients with treatment-resistant depression showed high scores for neuroticism, low scores for extraversion, openness and conscientiousness, without changes in agreeableness, on the NEO. However, patients in remitted depression showed no significant scores on NEO. Patients with treatment-resistant depression and low openness on NEO showed positive relationships with reward dependence and cooperativeness on the TCI. Conclusions Many studies have reported that depressed patients show high neuroticism, low extraversion and low conscientiousness on the NEO. Our study highlights low openness on the NEO, as a risk mediator in treatment-resistant depression. This newly identified trait should be included as a risk factor in treatment-resistant depression. PMID:24019864

Low openness on the revised NEO personality inventory as a risk factor for treatment-resistant depression.

PubMed

Takahashi, Michio; Shirayama, Yukihiko; Muneoka, Katsumasa; Suzuki, Masatoshi; Sato, Koichi; Hashimoto, Kenji

2013-01-01

Recently, we reported that low reward dependence, and to a lesser extent, low cooperativeness in the Temperature and Character Inventory (TCI) may be risk factors for treatment-resistant depression. Here, we analyzed additional psychological traits in these patients. We administered Costa and McCrae's five-factor model personality inventory, NEO Personality Inventory-Revised (NEO-PI-R), to antidepressant-treatment resistant depressed patients (n=35), remitted depressed patients (n=27), and healthy controls (n=66). We also evaluated the relationships between scores on NEO and TCI, using the same cohort of patients with treatment-resistant depression, as our previous study. Patients with treatment-resistant depression showed high scores for neuroticism, low scores for extraversion, openness and conscientiousness, without changes in agreeableness, on the NEO. However, patients in remitted depression showed no significant scores on NEO. Patients with treatment-resistant depression and low openness on NEO showed positive relationships with reward dependence and cooperativeness on the TCI. Many studies have reported that depressed patients show high neuroticism, low extraversion and low conscientiousness on the NEO. Our study highlights low openness on the NEO, as a risk mediator in treatment-resistant depression. This newly identified trait should be included as a risk factor in treatment-resistant depression.

B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system.

PubMed

Liu, Han-Chun; Reichl, C; Wegscheider, W; Mani, R G

2018-05-18

We report the observation of dc-current-bias-induced B-periodic Hall resistance oscillations and Hall plateaus in the GaAs/AlGaAs 2D system under combined microwave radiation- and dc bias excitation at liquid helium temperatures. The Hall resistance oscillations and plateaus appear together with concomitant oscillations also in the diagonal magnetoresistance. The periods of Hall and diagonal resistance oscillations are nearly identical, and source power (P) dependent measurements demonstrate sub-linear relationship of the oscillation amplitude with P over the span 0 < P ≤ 20 mW.

Passive wireless surface acoustic wave sensors for monitoring sequestration sites CO 2 emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yizhong; Chyu, Minking; Wang, Qing-Ming

2013-02-14

University of Pittsburgh’s Transducer lab has teamed with the U.S. Department of Energy’s National Energy Technology Laboratory (DOE NETL) to conduct a comprehensive study to develop/evaluate low-cost, efficient CO 2 measuring technologies for geological sequestration sites leakage monitoring. A passive wireless CO 2 sensing system based on surface acoustic wave technology and carbon nanotube nanocomposite was developed. Surface acoustic wave device was studied to determine the optimum parameters. Delay line structure was adopted as basic sensor structure. CNT polymer nanocomposite was fabricated and tested under different temperature and strain condition for natural environment impact evaluation. Nanocomposite resistance increased for 5more » times under pure strain, while the temperature dependence of resistance for CNT solely was -1375ppm/°C. The overall effect of temperature on nanocomposite resistance was -1000ppm/°C. The gas response of the nanocomposite was about 10% resistance increase under pure CO 2 . The sensor frequency change was around 300ppm for pure CO 2 . With paralyne packaging, the sensor frequency change from relative humidity of 0% to 100% at room temperature decreased from over 1000ppm to less than 100ppm. The lowest detection limit of the sensor is 1% gas concentration, with 36ppm frequency change. Wireless module was tested and showed over one foot transmission distance at preferred parallel orientation.« less

Influence of deposition temperature and amorphous carbon on microstructure and oxidation resistance of magnetron sputtered nanocomposite Crsbnd C films

NASA Astrophysics Data System (ADS)

Nygren, Kristian; Andersson, Matilda; Högström, Jonas; Fredriksson, Wendy; Edström, Kristina; Nyholm, Leif; Jansson, Ulf

2014-06-01

It is known that mechanical and tribological properties of transition metal carbide films can be tailored by adding an amorphous carbon (a-C) phase, thus making them nanocomposites. This paper addresses deposition, microstructure, and for the first time oxidation resistance of magnetron sputtered nanocomposite Crsbnd C/a-C films with emphasis on studies of both phases. By varying the deposition temperature between 20 and 700 °C and alternating the film composition, it was possible to deposit amorphous, nanocomposite, and crystalline Crsbnd C films containing about 70% C and 30% Cr, or 40% C and 60% Cr. The films deposited at temperatures below 300 °C were X-ray amorphous and 500 °C was required to grow crystalline phases. Chronoamperometric polarization at +0.6 V vs. Ag/AgCl (sat. KCl) in hot 1 mM H2SO4 resulted in oxidation of Crsbnd C, yielding Cr2O3 and C, as well as oxidation of C. The oxidation resistance is shown to depend on the deposition temperature and the presence of the a-C phase. Physical characterization of film surfaces show that very thin C/Cr2O3/Crsbnd C layers develop on the present material, which can be used to improve the oxidation resistance of, e.g. stainless steel electrodes.

The Role of Proximity Effects in Transition-Edge Sensor Design and Performance

NASA Technical Reports Server (NTRS)

Smith, Stephen J.

2012-01-01

Transition-edge sensor (TES) microcalorimeters and bolometers are under development by numerous groups worldwide for a variety of applications involving the measurement of particle and photon radiation. Recent experimental and theoretical progress has led to the realization that the fundamental physics of some TES systems involves the longitudinal proximity effect between the electrical bias contacts and the TES. As such, these devices are described as SS'S (or SN'S) weak-links exhibiting Fraunhofer-like magnetic field dependence, and exponential temperature dependence, of the critical current. These discoveries, for the first time, provide a realistic theoretical framework for predicting the resistive transition as a function of temperature, current and magnetic field. In this contribution, we review the latest theoretical and experimental results and investigate how proximity effects play an important role in determining the resistive transition characteristics, which ultimately determines the dynamic range and energy resolution of TES detectors. We investigate how these effects could be utilized in device design to engineer desired transition characteristics for a given application.

Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

NASA Astrophysics Data System (ADS)

Shang, T.; Yang, H. L.; Zhan, Q. F.; Zuo, Z. H.; Xie, Y. L.; Liu, L. P.; Zhang, S. L.; Zhang, Y.; Li, H. H.; Wang, B. M.; Wu, Y. H.; Zhang, S.; Li, Run-Wei

2016-10-01

We report an investigation of anomalous-Hall resistance (AHR) and spin-Hall magnetoresistance (SMR) in Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The AHR of Pt/IrMn/YIG heterostructures with an antiferromagnetic inserted layer is dramatically enhanced as compared to that of the Pt/YIG bilayer. The temperature dependent AHR behavior is nontrivial, while the IrMn thickness dependent AHR displays a peak at an IrMn thickness of 3 nm. The observed SMR in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the IrMn layer (≤3 nm) to interact with the ferromagnetic YIG layer. The lack of conventional anisotropic magnetoresistance (AMR) implies that the insertion of the IrMn layer between Pt and YIG could efficiently suppress the magnetic proximity effect (MPE) on induced Pt moments by YIG.

Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majid, S. S., E-mail: suhailphy276@gmail.com; Rahman, F.; Shukla, D. K.

2015-06-24

We present here the structural and electrical properties of the thin films of V{sub 2}O{sub 3} (Vanadium sesquioxide) and V{sub 5}O{sub 9}. Both these oxide phases, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}, have beenachieved on (001) orientedSi substrate using the V{sub 2}O{sub 5} target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V{sub 2}O{sub 3} and V{sub 5}O{sub 9} phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulatormore » transitions (MIT) for both the films, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}.« less

Simulation of current-filament dynamics and relaxation in the Pegasus Spherical Tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

O'Bryan, J. B.; Sovinec, C. R.; Bird, T. M.

Nonlinear numerical computation is used to investigate the relaxation of non-axisymmetric current-channels from washer-gun plasma sources into 'tokamak-like' plasmas in the Pegasus toroidal experiment [Eidietis et al. J. Fusion Energy 26, 43 (2007)]. Resistive MHD simulations with the NIMROD code [Sovinec et al. Phys. Plasmas 10(5), 1727-1732 (2003)] utilize ohmic heating, temperature-dependent resistivity, and anisotropic, temperature-dependent thermal conduction corrected for regions of low magnetization to reproduce critical transport effects. Adjacent passes of the simulated current-channel attract and generate strong reversed current sheets that suggest magnetic reconnection. With sufficient injected current, adjacent passes merge periodically, releasing axisymmetric current rings from themore » driven channel. The current rings have not been previously observed in helicity injection for spherical tokamaks, and as such, provide a new phenomenological understanding for filament relaxation in Pegasus. After large-scale poloidal-field reversal, a hollow current profile and significant poloidal flux amplification accumulate over many reconnection cycles.« less

Investigation of LRS dependence on the retention of HRS in CBRAM

NASA Astrophysics Data System (ADS)

Xu, Xiaoxin; Lv, Hangbing; Liu, Hongtao; Luo, Qing; Gong, Tiancheng; Wang, Ming; Wang, Guoming; Zhang, Meiyun; Li, Yang; Liu, Qi; Long, Shibing; Liu, Ming

2015-02-01

The insufficient retention prevents the resistive random access memory from intended application, such as code storage, FPGA, encryption, and others. The retention characteristics of high resistance state (HRS) switching from different low resistance state (LRS) were investigated in a 1-kb array with one transistor and one resistor configuration. The HRS degradation was found strongly dependent on the LRS: the lower the resistance of the LRS ( R LRS) is, the worse HRS retention will be. According to the quantum point contact model, the HRS corresponds to a tiny tunnel gap or neck bridge with atomic size in the filament. The degradation of HRS is due to the filling or widening of the neck point by the diffusion of copper species from the residual filament. As the residual filament is stronger in case of the lower R LRS, the active area around the neck point for copper species diffusion is larger, resulting in higher diffusion probability and faster degradation of HRS during the temperature-accelerated retention measurement.

Phase transformation of GaAs at high pressures and temperatures

NASA Astrophysics Data System (ADS)

Ono, Shigeaki; Kikegawa, Takumi

2018-02-01

The high-pressure behavior of gallium arsenide, GaAs, has been investigated using an in-situ X-ray powder diffraction technique in a diamond anvil cell combined with a resistance heating method, at pressures and temperatures up to 25 GPa and 1000 K respectively. The pressure-induced phase transition from a zincblende to an orthorhombic (Cmcm) structure was observed. This transition occurred at 17.3 GPa and at room temperature, where a negative temperature dependence for this transition was confirmed. The transition boundary was determined to be P (GPa) = 18.0 - 0.0025 × T (K).

Modeling electrochemical resistance with coal surface properties in a direct carbon fuel cell based on molten carbonate

NASA Astrophysics Data System (ADS)

Eom, Seongyong; Ahn, Seongyool; Kang, Kijoong; Choi, Gyungmin

2017-12-01

In this study, a numerical model of activation and ohmic polarization is modified, taking into account the correlation function between surface properties and inner resistance. To investigate the correlation function, the surface properties of coal are changed by acid treatment, and the correlations between the inner resistance measured by half-cell tests and the surface characteristics are analyzed. A comparison between the model and experimental results demonstrates that the absolute average deviations for each fuel are less than 10%. The numerical results show that the sensitivities of the coal surface properties affecting polarization losses change depending on the operating temperature. The surface oxygen concentrations affect the activation polarization and the sensitivity decreased with increasing temperature. The surface ash of coal is an additional index to be considered along with ohmic polarization and it has the greatest effect on the surface properties at 973 K.

Wiedemann-Franz law and nonvanishing temperature scale across the field-tuned quantum critical point of YbRh2Si2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reid, J.-Ph.; Tanatar, Makariy; Daou, R.

2014-01-23

The in-plane thermal conductivity kappa and electrical resistivity rho of the heavy-fermion metal YbRh2Si2 were measured down to 50 mK for magnetic fields H parallel and perpendicular to the tetragonal c axis, through the field-tuned quantum critical point H-c, at which antiferromagnetic order ends. The thermal and electrical resistivities, w L0T/kappa and rho, show a linear temperature dependence below 1 K, typical of the non-Fermi-liquid behavior found near antiferromagnetic quantum critical points, but this dependence does not persist down to T = 0. Below a characteristic temperature T-star similar or equal to 0.35 K, which depends weakly on H, w(T)more » and rho(T) both deviate downward and converge as T -> 0. We propose that T-star marks the onset of short-range magnetic correlations, persisting beyond H-c. By comparing samples of different purity, we conclude that the Wiedemann-Franz law holds in YbRh2Si2, even at H-c, implying that no fundamental breakdown of quasiparticle behavior occurs in this material. The overall phenomenology of heat and charge transport in YbRh2Si2 is similar to that observed in the heavy-fermion metal CeCoIn5, near its own field-tuned quantum critical point.« less

Electron transport properties of bis[2-(2-hydroxyphenyl)-pyridine]beryllium investigated by impedance spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yanping; Chen, Jiangshan; Huang, Jinying

2014-06-14

The electron transport properties of bis[2-(2-hydroxyphenyl)-pyridine] beryllium (Bepp{sub 2}) are investigated by impedance spectroscopy over a frequency range of 10 Hz to 13 MHz. The Cole-Cole plots demonstrate that the Bepp{sub 2}-based device can be represented by a single parallel resistance R{sub p} and capacitance C{sub p} network with a series resistance R{sub s}. The current-voltage characteristics and the variation of R{sub p} with applied bias voltage indicate the electron conduction of space-charge-limited current with exponential trap distributions in Bepp{sub 2}. It can be seen that the electron mobility exhibits strong field-dependence in low electric field region and almost saturate in highmore » electric field region. It is experimentally found that Bepp{sub 2} shows dispersion transport and becomes weak as the electric field increases. The activation energy is determined to be 0.043 eV by temperature-dependent conductivity, which is consistent with the result obtained from the temperature-dependent current density characteristics. The electron mobility reaches the orders of 10{sup −6}–10{sup −5} cm{sup 2} V{sup −1} s{sup −1}, depending on the electric field.« less

Emergence of higher order rotational symmetry in the hidden order phase of URu 2Si 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kanchanavatee, N.; Janoschek, M.; Huang, K.

2016-09-30

Electrical resistivity measurements were performed in this paper as functions of temperature, magnetic field, and angle θ between the magnetic field and the c-axis of a URu 2Si 2 single crystal. The resistivity exhibits a two-fold oscillation as a function of θ at high temperatures, which undergoes a 180°-phase shift (sign change) with decreasing temperature at around 35 K. The hidden order transition is manifested as a minimum in the magnetoresistance and amplitude of the two-fold oscillation. Interestingly, the resistivity also showed four-fold, six-fold, and eight-fold symmetries at the hidden order transition. These higher order symmetries were also detected atmore » low temperatures, which could be a sign of the formation of another pseudogap phase above the superconducting transition, consistent with recent evidence for a pseudogap from point-contact spectroscopy measurements and NMR. Measurements of the magnetisation of single crystalline URu 2Si 2 with the magnetic field applied parallel and perpendicular to the crystallographic c-axis revealed regions with linear temperature dependencies between the hidden order transition temperature and about 25 K. Finally, this T-linear behaviour of the magnetisation may be associated with the formation of a precursor phase or ‘pseudogap’ in the density of states in the vicinity of 30–35 K.« less

Evidence for the absence of electron-electron Coulomb interaction quantum correction to the anomalous Hall effect in Co2FeSi Heusler-alloy thin films

NASA Astrophysics Data System (ADS)

Hazra, Binoy Krishna; Kaul, S. N.; Srinath, S.; Raja, M. Manivel; Rawat, R.; Lakhani, Archana

2017-11-01

Electrical (longitudinal) resistivity ρx x, at H =0 and H =80 kOe, anomalous Hall resistivity ρxy A H, and magnetization M , have been measured at different temperatures in the range 5-300 K on the Co2FeSi (CFS) Heusler-alloy thin films, grown on Si(111) substrate, with thickness ranging from 12 to 100 nm. At fixed fields H =0 and H =80 kOe, ρx x(T ) goes through a minimum at T =Tmin (which depends on the film thickness) in all the CFS thin films. In sharp contrast, both the anomalous Hall coefficient RA and ρxy A H monotonously increase with temperature without exhibiting a minimum. Elaborate analyses of ρx x, RA, and ρxy A H establishes the following. (i) The enhanced electron-electron Coulomb interaction (EEI) quantum correction (QC) is solely responsible for the upturn in "zero-field" and "in-field" ρx x(T ) at T

Body temperature and resistance to evaporative water loss in tropical Australian frogs.

PubMed

Tracy, Christopher R; Christian, Keith A; Betts, Gregory; Tracy, C Richard

2008-06-01

Although the skin of most amphibians measured to date offers no resistance to evaporative water loss (EWL), some species, primarily arboreal frogs, produce skin secretions that increase resistance to EWL. At high air temperatures, it may be advantageous for amphibians to increase EWL as a means to decrease body temperature. In Australian hylid frogs, most species do not decrease their resistance at high air temperature, but some species with moderate resistance (at moderate air temperatures) gradually decrease resistance with increasing air temperature, and some species with high resistance (at moderate air temperatures) abruptly decrease resistance at high air temperatures. Lower skin resistance at high air temperatures decreases the time to desiccation, but the lower body temperatures allow the species to avoid their critical thermal maximum (CT(Max)) body temperatures. The body temperatures of species with low to moderate resistances to EWL that do not adjust resistance at high air temperatures do not warm to their CT(Max), although for some species, this is because they have high CT(Max) values. As has been reported previously for resistance to EWL generally, the response pattern of change of EWL at high air temperatures has apparently evolved independently among Australian hylids. The mechanisms involved in causing resistance and changes in resistance are unknown.

Fermi surface in the hidden-order state of URu2Si2 under intense pulsed magnetic fields up to 81 T

NASA Astrophysics Data System (ADS)

Scheerer, G. W.; Knafo, W.; Aoki, D.; Nardone, M.; Zitouni, A.; Béard, J.; Billette, J.; Barata, J.; Jaudet, C.; Suleiman, M.; Frings, P.; Drigo, L.; Audouard, A.; Matsuda, T. D.; Pourret, A.; Knebel, G.; Flouquet, J.

2014-04-01

We present measurements of the resistivity ρx ,x of URu2Si2 high-quality single crystals in pulsed high magnetic fields up to 81 T at a temperature of 1.4 K and up to 60 T at temperatures down to 100 mK. For a field H applied along the magnetic easy axis c, a strong sample dependence of the low-temperature resistivity in the hidden-order phase is attributed to a high carrier mobility. The interplay between the magnetic and orbital properties is emphasized by the angle dependence of the phase diagram, where magnetic transition fields and crossover fields related to the Fermi surface properties follow a 1/cosθ law, θ being the angle between H and c. For H ∥c, a crossover defined at a kink of ρx ,x, as initially reported in [Shishido, Phys. Rev. Lett. 102, 156403 (2009), 10.1103/PhysRevLett.102.156403], is found to be strongly sample dependent: its characteristic field μ0H* varies from ≃20 T in our best sample with a residual resistivity ratio RRR = ρx ,x(300K)/ ρx ,x(2K) of 225 to ≃25 T in a sample with a RRR of 90. A second crossover is defined at the maximum of ρx ,x at the sample-independent low-temperature (LT) characteristic field μ0Hρ,maxLT≃30 T. Fourier analyses of Shubnikov-de Haas oscillations show that Hρ,maxLT coincides with a sudden modification of the Fermi surface, while H* lies in a regime where the Fermi surface is smoothly modified. For H ∥a, (i) no phase transition is observed at low temperature and the system remains in the hidden-order phase up to 81 T, (ii) quantum oscillations surviving up to 7 K are related to a new orbit observed at the frequency Fλ≃1350 T and associated with a low effective mass mλ*=(1±0.5)m0, where m0 is the free electron mass, and (iii) no Fermi surface modification occurs up to 81 T.

Free-standing nanocomposites with high conductivity and extensibility.

PubMed

Chun, Kyoung-Yong; Kim, Shi Hyeong; Shin, Min Kyoon; Kim, Youn Tae; Spinks, Geoffrey M; Aliev, Ali E; Baughman, Ray H; Kim, Seon Jeong

2013-04-26

The prospect of electronic circuits that are stretchable and bendable promises tantalizing applications such as skin-like electronics, roll-up displays, conformable sensors and actuators, and lightweight solar cells. The preparation of highly conductive and highly extensible materials remains a challenge for mass production applications, such as free-standing films or printable composite inks. Here we present a nanocomposite material consisting of carbon nanotubes, ionic liquid, silver nanoparticles, and polystyrene-polyisoprene-polystyrene having a high electrical conductivity of 3700 S cm(-1) that can be stretched to 288% without permanent damage. The material is prepared as a concentrated dispersion suitable for simple processing into free-standing films. For the unstrained state, the measured thermal conductivity for the electronically conducting elastomeric nanoparticle film is relatively high and shows a non-metallic temperature dependence consistent with phonon transport, while the temperature dependence of electrical resistivity is metallic. We connect an electric fan to a DC power supply using the films to demonstrate their utility as an elastomeric electronic interconnect. The huge strain sensitivity and the very low temperature coefficient of resistivity suggest their applicability as strain sensors, including those that operate directly to control motors and other devices.

Low carrier semiconductor like behavior in Lu3Ir4Ge13 single crystal

NASA Astrophysics Data System (ADS)

Kumar, Anil; Matteppanavar, Shidaling; Thamizhavel, A.; Ramakrishnan, S.

2018-04-01

Single crystal of Lu3Ir4Ge13 crystallizing in the Yb3Rh4Sn13-type cubic crystal structure has been grown by Czochralski method in a tetra-arc furnace. In this paper we report on the crystal structure, magnetic and transport properties of Lu3Ir4Ge13. The analysis of the powder x-ray diffraction (XRD) studies revealed that Lu3Ir4Ge13 crystallizes in a cubic structure with the space group Pm-3n, no. 223. The lattice parameter was obtained from the Rietveld refinement of the room temperature XRD data which amounts to 8.904 (3) Å with low R factors. The temperature dependence of the resistivity exhibited semiconductor like behavior till 1.8 K, with a broad hump around 15 - 62 K. This hump was observed in both warming and cooling cycle with a very small hysteresis, it may be due to the existence of structural transition from high - low symmetry. The temperature dependent magnetization data shows the diamagnetic behavior with an anomaly around 70 K, which is well supported by the derivative of resistivity data.

Temperature Dependent Electrical Transport Properties of Ni-Cr and Co-Cr Binary Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thakore, B. Y.; Khambholja, S. G.; Bhatt, N. K.

2011-12-12

The temperature dependent electrical transport properties viz. electrical resistivity and thermal conductivity of Ni{sub 10}Cr{sub 90} and Co{sub 20}Cr{sub 80} alloys are computed at various temperatures. The electrical resistivity has been calculated according to Faber-Ziman model combined with Ashcroft-Langreth partial structure factors. In the present work, to include the ion-electron interaction, we have used a well tested local model potential. For exchange-correlation effects, five different forms of local field correction functions due to Hartree (H), Taylor (T), Ichimaru and Utsumi (IU), Farid et al (F) and Sarkar et al (S) are used. The present results due to S function aremore » in good agreement with the experimental data as compared to results obtained using other four functions. The S functions satisfy compressibility sum rule in long wave length limit more accurately as compared to T, IU and F functions, which may be responsible for better agreement of results, obtained using S function. Also, present result confirms the validity of present approach in determining the transport properties of alloys like Ni-Cr and Co-Cr.« less

The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Z. H., E-mail: zhaohui@physics.umanitoba.ca; Bai, Lihui; Hu, C.-M.

2015-03-15

The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ) was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, itsmore » angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.« less

Electrical resistivity and thermopower measurements of the hole- and electron-doped cobaltites LnCoO3

NASA Astrophysics Data System (ADS)

Jirák, Z.; Hejtmánek, J.; Knížek, K.; Veverka, M.

2008-07-01

Two perovskite cobaltites, LaCoO3 and DyCoO3 , which are border compounds with respect to the Ln size, were investigated by the electric resistivity and thermopower measurements up to 800-1000 K. Special attention was given to effects of extra holes or electrons, introduced by light doping of Co sites by Mg2+ or Ti4+ ions. The experiments on the La-based compounds were complemented by magnetic measurements. The study shows that both kinds of charge carriers induce magnetic states on surrounding Co3+ sites and form thus thermally stable polarons of large total spin. Their itinerancy is characterized by low-temperature resistivity, which is of Arrhenius type ρ˜exp(EA/kT) for the hole (Co4+) -doped samples, while an unusual dependence ρ˜1/Tν (n=8-10) is observed for the electron (Co2+) -doped samples. At higher temperatures, additional hole carriers are massively populated in the Co3+ background, leading to a resistivity drop. This transition become evident at ˜300K and 450 K and culminates at TI-M=540 and 780 K for the La- and Dy-based samples, respectively. The electronic behaviors of the cobaltites in dependence on temperature are explained considering local excitations from the diamagnetic low-spin (LS) Co3+ to close-lying paramagnetic high-spin (HS) Co3+ states and subsequent formation of a metallic phase of the IS Co3+ character through a charge transfer mechanism between LS/HS pairs. The magnetic polarons associated with doped carriers are interpreted as droplets of such intermediate (IS) phase.

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

1987-01-01

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

1987-01-01

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

Review of temperature dependence of thermal properties, dielectric properties, and perfusion of biological tissues at hyperthermic and ablation temperatures.

PubMed

Rossmanna, Christian; Haemmerich, Dieter

2014-01-01

The application of supraphysiological temperatures (>40°C) to biological tissues causes changes at the molecular, cellular, and structural level, with corresponding changes in tissue function and in thermal, mechanical and dielectric tissue properties. This is particularly relevant for image-guided thermal treatments (e.g. hyperthermia and thermal ablation) delivering heat via focused ultrasound (FUS), radiofrequency (RF), microwave (MW), or laser energy; temperature induced changes in tissue properties are of relevance in relation to predicting tissue temperature profile, monitoring during treatment, and evaluation of treatment results. This paper presents a literature survey of temperature dependence of electrical (electrical conductivity, resistivity, permittivity) and thermal tissue properties (thermal conductivity, specific heat, diffusivity). Data of soft tissues (liver, prostate, muscle, kidney, uterus, collagen, myocardium and spleen) for temperatures between 5 to 90°C, and dielectric properties in the frequency range between 460 kHz and 3 GHz are reported. Furthermore, perfusion changes in tumors including carcinomas, sarcomas, rhabdomyosarcoma, adenocarcinoma and ependymoblastoma in response to hyperthmic temperatures up to 46°C are presented. Where appropriate, mathematical models to describe temperature dependence of properties are presented. The presented data is valuable for mathematical models that predict tissue temperature during thermal therapies (e.g. hyperthermia or thermal ablation), as well as for applications related to prediction and monitoring of temperature induced tissue changes.

Review of temperature dependence of thermal properties, dielectric properties, and perfusion of biological tissues at hyperthermic and ablation temperatures

PubMed Central

Rossmann, Christian; Haemmerich, Dieter

2016-01-01

The application of supraphysiological temperatures (>40°C) to biological tissues causes changes at the molecular, cellular, and structural level, with corresponding changes in tissue function and in thermal, mechanical and dielectric tissue properties. This is particularly relevant for image-guided thermal treatments (e.g. hyperthermia and thermal ablation) delivering heat via focused ultrasound (FUS), radiofrequency (RF), microwave (MW), or laser energy; temperature induced changes in tissue properties are of relevance in relation to predicting tissue temperature profile, monitoring during treatment, and evaluation of treatment results. This paper presents a literature survey of temperature dependence of electrical (electrical conductivity, resistivity, permittivity) and thermal tissue properties (thermal conductivity, specific heat, diffusivity). Data of soft tissues (liver, prostate, muscle, kidney, uterus, collagen, myocardium and spleen) for temperatures between 5 to 90°C, and dielectric properties in the frequency range between 460 kHz and 3 GHz are reported. Furthermore, perfusion changes in tumors including carcinomas, sarcomas, rhabdomyosarcoma, adenocarcinoma and ependymoblastoma in response to hyperthmic temperatures up to 46°C are presented. Where appropriate, mathematical models to describe temperature dependence of properties are presented. The presented data is valuable for mathematical models that predict tissue temperature during thermal therapies (e.g. hyperthermia or thermal ablation), as well as for applications related to prediction and monitoring of temperature induced tissue changes. PMID:25955712

The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arapov, Yu. G.; Gudina, S. V.; Klepikova, A. S., E-mail: klepikova@imp.uran.ru

2017-02-15

The dependences of the longitudinal and Hall resistances on a magnetic field in n-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields Ð’ = 0–16 T and temperatures T = 0.05–4.2 K. Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated.

Magnetoresistivity of thin YBa2Cu3O7-δ films on sapphire substrate

NASA Astrophysics Data System (ADS)

Probst, Petra; Il'in, Konstantin; Engel, Andreas; Semenov, Alexei; Hübers, Heinz-Wilhelm; Hänisch, Jens; Holzapfel, Bernhardt; Siegel, Michael

2012-09-01

Magnetoresistivity of YBa2Cu3O7-δ films with thicknesses between 7 and 100 nm deposited on CeO2 and PrBa2Cu3O7-δ buffer layers on sapphire substrate has been measured to analyze the temperature dependence of the second critical magnetic field Bc2. To define Bc2, the mean-field transition temperature Tc was evaluated by fitting the resistive transition in zero magnetic field with the fluctuation conductivity theory of Aslamazov and Larkin. At T → Tc the Bc2(T) dependence shows a crossover from downturn to upturn curvature with the increase in film thickness.

Effect of SiC Content on the Ablation and Oxidation Behavior of ZrB2-Based Ultra High Temperature Ceramic Composites

PubMed Central

Hu, Ping; Gui, Kaixuan; Yang, Yang; Dong, Shun; Zhang, Xinghong

2013-01-01

The ablation and oxidation of ZrB2-based ultra high temperature ceramic (UHTC) composites containing 10%, 15% and 30% v/v SiC were tested under different heat fluxes in a high frequency plasma wind tunnel. Performance was significantly affected by the surface temperature, which was strongly dependent on the composition. Composites containing 10% SiC showed the highest surface temperature (>2300 °C) and underwent a marked degradation under both conditions. In contrast, composites with 30% SiC exhibited the lowest surface temperature (<2000 °C) and demonstrated excellent ablation resistance. The surface temperature of UHTCs in aerothermal testing was closely associated with the dynamic evolution of the surface and bulk oxide properties, especially for the change in chemical composition on the exposed surface, which was strongly dependent on the material composition and testing parameters (i.e., heat flux, enthalpy, pressure and test time), and in turn affected its oxidation performance. PMID:28809239

Electrode performance parameters for a radioisotope-powered AMTEC for space power applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Underwood, M.L.; O'Connor, D.; Williams, R.M.

1992-08-01

The alkali metal thermoelastic converter (AMTEC) is a device for the direct conversion of heat to electricity. Recently a design of an AMTEC using a radioisotope heat source was described, but the optimum condenser temperature was hotter than the temperatures used in the laboratory to develop the electrode performance model. Now laboratory experiments have confirmed the dependence of two model parameters over a broader range of condenser and electrode temperatures for two candidate electrode compositions. One parameter, the electrochemical exchange current density at the reaction interface, is independent of the condenser temperature, and depends only upon the collision rate ofmore » sodium at the reaction zone. The second parameter, a morphological parameter, which measures the mass transport resistance through the electrode, is independent of condenser and electrode temperatures for molybdenum electrodes. For rhodium-tungsten electrodes, however, this parameter increases for decreasing electrode temperature, indicating an activated mass transport mechanism such as surface diffusion. 21 refs.« less

Effect of SiC Content on the Ablation and Oxidation Behavior of ZrB₂-Based Ultra High Temperature Ceramic Composites.

PubMed

Hu, Ping; Gui, Kaixuan; Yang, Yang; Dong, Shun; Zhang, Xinghong

2013-04-29

The ablation and oxidation of ZrB₂-based ultra high temperature ceramic (UHTC) composites containing 10%, 15% and 30% v/v SiC were tested under different heat fluxes in a high frequency plasma wind tunnel. Performance was significantly affected by the surface temperature, which was strongly dependent on the composition. Composites containing 10% SiC showed the highest surface temperature (>2300 °C) and underwent a marked degradation under both conditions. In contrast, composites with 30% SiC exhibited the lowest surface temperature (<2000 °C) and demonstrated excellent ablation resistance. The surface temperature of UHTCs in aerothermal testing was closely associated with the dynamic evolution of the surface and bulk oxide properties, especially for the change in chemical composition on the exposed surface, which was strongly dependent on the material composition and testing parameters ( i.e. , heat flux, enthalpy, pressure and test time), and in turn affected its oxidation performance.

Screening and transport in 2D semiconductor systems at low temperatures

PubMed Central

Das Sarma, S.; Hwang, E. H.

2015-01-01

Low temperature carrier transport properties in 2D semiconductor systems can be theoretically well-understood within RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder arising from random quenched charged impurities in the environment. In this work, we derive a number of analytical formula, supported by realistic numerical calculations, for the relevant density, mobility, and temperature range where 2D transport should manifest strong intrinsic (i.e., arising purely from electronic effects) metallic temperature dependence in different semiconductor materials arising entirely from the 2D screening properties, thus providing an explanation for why the strong temperature dependence of the 2D resistivity can only be observed in high-quality and low-disorder 2D samples and also why some high-quality 2D materials manifest much weaker metallicity than other materials. We also discuss effects of interaction and disorder on the 2D screening properties in this context as well as compare 2D and 3D screening functions to comment why such a strong intrinsic temperature dependence arising from screening cannot occur in 3D metallic carrier transport. Experimentally verifiable predictions are made about the quantitative magnitude of the maximum possible low-temperature metallicity in 2D systems and the scaling behavior of the temperature scale controlling the quantum to classical crossover. PMID:26572738

Workshop on the Destruction of Bacterial Spores Held in Brussels, Belgium on May 1-3, 1985.

DTIC Science & Technology

1985-05-03

pasteurization , sterilization , UHT, Association, Chipping Campden, fluidized beds, new developments - UK) failures in commercial heat processing 9. Window of...exposure of the food to high temperatures have been diminished by rotation outoclaves and/or HTST (high temperature short time processes). For economic...effect commercial sterility and product - . safety is dependent not only on the inherent heat resistance of spores . .. but also on the numbers

Certain physical properties of cobalt and nickel borides

NASA Technical Reports Server (NTRS)

Kostetskiy, I. I.; Lvov, S. N.

1981-01-01

The temperature dependence of the electrical resistivity, the thermal conductivity, and the thermal emf of cobalt and nickel borides were studied. In the case of the nickel borides the magnetic susceptibility and the Hall coefficient were determined at room temperature. The results are discussed with allowance for the current carrier concentration, the effect of various mechanisms of current-carrier scattering and the location of the Fermi level in relation to the 3d band.

Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S 1–xSe x) 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frick, Jessica J.; Kushwaha, Satya K.; Cava, Robert J.

We report the carrier transport properties of CuIn(S 1-xSe x) 2 (0 ≤ x ≤ 1), a promising chalcopyrite semiconductor series for solar water splitting. A low concentration Mg dopant is used to decrease the carrier resistivity through facilitating bulk p-type transport at ambient temperature. Temperature-dependent resistivity measurements reveal a four-order magnitude decrease in bulk electrical resistivity (from 10 3 to 10 –1 Ohm cm) for 1% Mg-doped CuIn(S 1–xSe x) 2 as x increases from 0 to 1. Hall effect measurements at room temperature reveal p-type majority carrier concentrations that vary from 10 15 to 10 18 cm –3more » and mobilities of approximately 1–10 cm 2 V –1 s –1. These results provide insights into the fundamental carrier transport properties of CuIn(S 1–xSe x) 2 and will be of value in optimizing these materials further for photoelectrochemistry applications.« less

Thermal and Compositional Variation of Glassy Metal Structure Factors.

NASA Astrophysics Data System (ADS)

From, Milton

The x-ray total structure factor of the glassy -metal alloys Mg_{70}Zn_ {30}, Ca_{70}Mg_{30 } and Mg_{85.5}Cu _{14.5} has been measured at three temperatures: 9K, 150K, and 300K. The data have a statistical precision of about.8% and an absolute accuracy of roughly 3%. Percus-Yevick hard sphere structure factors may be fitted quite accurately to the data in the region of the first peak. In addition, the variation of the experimental structure factor with composition is found to be consistent with the Percus-Yevick theory. At low k values, Percus -Yevick and other theoretical model structure factors are in poor agreement with the data. Within experimental error, the temperature dependence of the structure factors is in agreement with the Debye plane wave phonon model of atomic vibrations. The measured structure factors are used to calculate the electrical resistivity from the Faber-Ziman equation. In most cases, the calculations yield both the correct magnitude of resistivity and sign of the temperature coefficient of resistivity.

Vapor chamber with hollow condenser tube heat sink

NASA Astrophysics Data System (ADS)

Ong, K. S.; Haw, P. L.; Lai, K. C.; Tan, K. H.

2017-04-01

Heat pipes are heat transfer devices capable of transferring large quantities of heat effectively and efficiently. A vapor chamber (VC) is a flat heat pipe. A novel VC with hollow condenser tubes embedded on the top of it is proposed. This paper reports on the experimental thermal performance of three VC devices embedded with hollow tubes and employed as heat sinks. The first device consisted of a VC with a single hollow tube while the other two VCs had an array of multi-tubes with different tube lengths. All three devices were tested under natural and force air convection cooling. An electrical resistance heater was employed to provide power inputs of 10 and 40 W. Surface temperatures were measured with thermocouple probes at different locations around the devices. The results show that temperatures increased with heater input while total device thermal resistances decreased. Force convection results in lower temperatures and lower resistance. Dry-out occurs at high input power and with too much condensing area. There appears to be an optimum fill ratio which depended upon dimensions of the VC and also heating power.

Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S 1–xSe x) 2

DOE PAGES

Frick, Jessica J.; Kushwaha, Satya K.; Cava, Robert J.; ...

2017-07-27

We report the carrier transport properties of CuIn(S 1-xSe x) 2 (0 ≤ x ≤ 1), a promising chalcopyrite semiconductor series for solar water splitting. A low concentration Mg dopant is used to decrease the carrier resistivity through facilitating bulk p-type transport at ambient temperature. Temperature-dependent resistivity measurements reveal a four-order magnitude decrease in bulk electrical resistivity (from 10 3 to 10 –1 Ohm cm) for 1% Mg-doped CuIn(S 1–xSe x) 2 as x increases from 0 to 1. Hall effect measurements at room temperature reveal p-type majority carrier concentrations that vary from 10 15 to 10 18 cm –3more » and mobilities of approximately 1–10 cm 2 V –1 s –1. These results provide insights into the fundamental carrier transport properties of CuIn(S 1–xSe x) 2 and will be of value in optimizing these materials further for photoelectrochemistry applications.« less

Study on Pyroelectric Harvesters with Various Geometry

PubMed Central

Siao, An-Shen; Chao, Ching-Kong; Hsiao, Chun-Ching

2015-01-01

Pyroelectric harvesters convert time-dependent temperature variations into electric current. The appropriate geometry of the pyroelectric cells, coupled with the optimal period of temperature fluctuations, is key to driving the optimal load resistance, which enhances the performance of pyroelectric harvesters. The induced charge increases when the thickness of the pyroelectric cells decreases. Moreover, the induced charge is extremely reduced for the thinner pyroelectric cell when not used for the optimal period. The maximum harvested power is achieved when a 100 μm-thick PZT (Lead zirconate titanate) cell is used to drive the optimal load resistance of about 40 MΩ. Moreover, the harvested power is greatly reduced when the working resistance diverges even slightly from the optimal load resistance. The stored voltage generated from the 75 μm-thick PZT cell is less than that from the 400 μm-thick PZT cell for a period longer than 64 s. Although the thinner PZT cell is advantageous in that it enhances the efficiency of the pyroelectric harvester, the much thinner 75 μm-thick PZT cell and the divergence from the optimal period further diminish the performance of the pyroelectric cell. Therefore, the designers of pyroelectric harvesters need to consider the coupling effect between the geometry of the pyroelectric cells and the optimal period of temperature fluctuations to drive the optimal load resistance. PMID:26270666

Electrical Switching of Perovskite Thin-Film Resistors

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Juan; Ignatiev, Alex

2010-01-01

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Abnormal temperature dependence of conductance of single Cd-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Li, Q. H.; Wan, Q.; Wang, Y. G.; Wang, T. H.

2005-06-01

Positive temperature coefficient of resistance is observed on single Cd-doped ZnO nanowires. The current along the nanowire increases linearly with the bias and saturates at large biases. The conductance is greatly enhanced either by ultraviolet illumination or infrared illumination. However, the conductance decreases with increasing temperature, in contrast to the reported temperature behavior either for ZnO nanostructures or for CdO nanoneedles. The increase of the conductance under illumination is related to surface effect and the decrease with increasing temperature to bulk effect. These results show that Cd doping does not change surface effect but affects bulk effect. Such a bulk effect could be used to realize on-chip temperature-independent varistors.

Sapphire Whispering Gallery Thermometer

NASA Astrophysics Data System (ADS)

Strouse, G. F.

2007-12-01

An innovative sapphire whispering gallery thermometer (SWGT) is being explored at the National Institute of Standards and Technology (NIST) as a potential replacement for a standard platinum resistance thermometer (SPRT) for industrial applications that require measurement uncertainties of ≤ 10 mK. The NIST SWGT uses a synthetic sapphire monocrystalline disk configured as a uniaxial, dielectric resonator with whispering gallery modes between 14 GHz and 20 GHz and with Q-factors as large as 90,000. The prototype SWGT stability at the ice melting point (0°C) is ≤ 1 mK with a frequency resolution equivalent to 0.05 mK. The prototype SWGT measurement uncertainty ( k= 1) is 10 mK from 0°C to 100°C for all five resonance modes studied. These results for the SWGT approach the capabilities of industrial resistance thermometers. The SWGT promises greatly increased resistance to mechanical shock relative to SPRTs, over the range from -196°C to 500°C while retaining the low uncertainties needed by secondary calibration laboratories. The temperature sensitivity of the SWGT depends upon a well-defined property (the refractive index at microwave frequencies) and the thermal expansion of a pure material. Therefore, it is expected that SWGTs can be calibrated over a wide temperature range using a reference function, along with deviations measured at a few fixed points. This article reports the prototype SWGT stability, resolution, repeatability, and the temperature dependence of five whispering gallery resonance frequencies in the range from 0°C to 100°C.

Spin-dependent Seebeck Effect, Thermal Colossal Magnetoresistance and Negative Differential Thermoelectric Resistance in Zigzag Silicene Nanoribbon Heterojunciton.

PubMed

Fu, Hua-Hua; Wu, Dan-Dan; Zhang, Zu-Quan; Gu, Lei

2015-05-22

Spin-dependent Seebeck effect (SDSE) is one of hot topics in spin caloritronics, which examine the relationships between spin and heat transport in materials. Meanwhile, it is still a huge challenge to obtain thermally induced spin current nearly without thermal electron current. Here, we construct a hydrogen-terminated zigzag silicene nanoribbon heterojunction, and find that by applying a temperature difference between the source and the drain, spin-up and spin-down currents are generated and flow in opposite directions with nearly equal magnitudes, indicating that the thermal spin current dominates the carrier transport while the thermal electron current is much suppressed. By modulating the temperature, a pure thermal spin current can be achieved. Moreover, a thermoelectric rectifier and a negative differential thermoelectric resistance can be obtained in the thermal electron current. Through the analysis of the spin-dependent transport characteristics, a phase diagram containing various spin caloritronic phenomena is provided. In addition, a thermal magnetoresistance, which can reach infinity, is also obtained. Our results put forward an effective route to obtain a spin caloritronic material which can be applied in future low-power-consumption technology.

Nonlinear saturation of tearing mode islands.

PubMed

Hastie, R J; Militello, F; Porcelli, F

2005-08-05

New, rigorous results for the tearing island saturation problem are presented. These results are valid for the realistic case where the magnetic island structure is non-symmetric about the reconnection surface and the electron temperature, on which the electrical resistivity depends, is evolved self-consistently with the island growth.

Investigations of 2.9-GHz Resonant Microwave-Sensitive Ag/MgO/Ge/Ag Tunneling Diodes

NASA Astrophysics Data System (ADS)

Qasrawi, A. F.; Khanfar, H. K.

2013-12-01

In this work, a resonant microwave-sensitive tunneling diode has been designed and investigated. The device, which is composed of a magnesium oxide (MgO) layer on an amorphous germanium (Ge) thin film, was characterized by means of temperature-dependent current ( I)-voltage ( V), room-temperature differential resistance ( R)-voltage, and capacitance ( C)-voltage characteristics. The device resonating signal was also tested and evaluated at 2.9 GHz. The I- V curves reflected weak temperature dependence and a wide tunneling region with peak-to-valley current ratio of ˜1.1. The negative differential resistance region shifts toward lower biasing voltages as temperature increases. The true operational limit of the device was determined as 350 K. A novel response of the measured R- V and C- V to the incident alternating-current (ac) signal was observed at 300 K. Particularly, the response to a 100-MHz signal power ranging from the standard Bluetooth limit to the maximum output power of third-generation mobile phones reflects a wide range of tunability with discrete switching property at particular power limits. In addition, when the tunnel device was implanted as an amplifier for a 2.90-GHz resonating signal of the power of wireless local-area network (LAN) levels, signal gain of 80% with signal quality factor of 4.6 × 104 was registered. These remarkable properties make devices based on MgO-Ge interfaces suitable as electronic circuit elements for microwave applications, bias- and time-dependent electronic switches, and central processing unit (CPU) clocks.

Fabrication and Electrical Characterization of Deep-Submicron Trench-Isolated CMOS Device Structures.

NASA Astrophysics Data System (ADS)

Perera, Asanga Hiran

The magnitude of the extrinsic parasitic MOSFET series resistance was experimentally evaluated in the deep -submicron domain and its consequence on device performance was determined. The series resistance of depletion mode MOSFET test structures were measured for source-drain sizes as small as 0.2 μm by 0.3 μm at room temperature and 100^ circK. To build the test structures a multilevel -full electron beam lithography fabrication process was developed with a pattern overlay accuracy of 75 nm. A new positive tone novalac resist, SYSTEM-9, was developed for electron beam application. The resist had moderate sensitivity, 19-30 muC/cm ^2, and a contrast up to 14. Interrupted development and reduced developer temperature resulted in contrast enhancements of up to 125%. SYSTEM-9 had a two or three times better dry etch resistance than PMMA. A shallow trench isolation technology capable of defining 0.2 μm wide active areas was developed. A rapid thermal annealing based silicidation scheme using TiSi_2 was established. MOSFET sidewall spacer formation using PECVD SiO_2 was calibrated. Antimony and gallium were investigated as possible alternatives to arsenic and boron, respectively, and well behaved substrate diodes were successfully fabricated. Two new patterning techniques for the metal bi-layer metalization of TiW and Al, based on liftoff and reactive ion etching, were developed. The source drain resistance of the test structures was measured at room temperature and at 100^ circK. An LN_2 flushed cold chuck for low temperature device probing was designed and constructed. The temperature dependence of the current voltage characteristics and the extracted series resistance proved that current flow in the contacts was tunneling dominated. The extrinsic source-drain resistance increased rapidly as the contact size decreased below 0.5 mum, and showed an almost two order of magnitude change, when the source-drain area was reduced from 2 x 1.7 mum^2 to 0.2 x 0.3 mum^2 . The effect of this resistance increase on a CMOS inverter switching speed was estimated. A first order empirical model to predict the series resistance was also formulated. Good correspondence was observed between results from the device simulator PISCES-2B and measured data for larger source-drain sizes.

Construction and properties of a cell line constitutively expressing the herpes simplex virus glycoprotein B dependent on functional alpha 4 protein synthesis.

PubMed Central

Arsenakis, M; Hubenthal-Voss, J; Campadelli-Fiume, G; Pereira, L; Roizman, B

1986-01-01

We report the construction of a cell line constitutively expressing the glycoprotein B (gB) of herpes simplex virus (HSV) 1. The cell line was constructed in two steps. In the first, a baby hamster kidney cell line was transfected with the DNA of a plasmid containing the neomycin phosphotransferase gene that confers resistance to the antibiotic G418 and the gene specifying a temperature-sensitive (ts-) alpha 4 protein of HSV-1, the major viral regulatory protein. A clonal cell line, alpha 4/c113, selected for resistance to the antibiotic G418, expressed high levels of alpha 4 protein constitutively. Superinfection of these cells with HSV-2 resulted in twofold induction of the resident HSV-1 alpha 4 gene. In the second step, alpha 4/c113 cells were transfected with the DNA of a plasmid carrying the gB gene and the mouse methotrexate resistance dihydrofolate reductase gene. A clonal cell line, alpha 4/c113/gB, selected for methotrexate resistance expressed gB constitutively. Expression of both gB and alpha 4 continued unabated for at least 32 serial passages. Cells passaged serially in medium containing both methotrexate and G418 after passage 10 contained a higher copy number of the alpha 4 gene and produced larger amounts of both gB and alpha 4 proteins than did cells maintained in medium containing methotrexate alone. Expression of gB was dependent on the presence of functional alpha 4 protein inasmuch as expression of gB ceased on shift up to nonpermissive temperatures, when shifted to permissive temperatures, the cell line reinitiated expression of gB after a delay commensurate with the length of incubation at the nonpermissive temperature, and the cell-resident HSV-1 gB gene was expressed at the nonpermissive temperature in cells infected with a recombinant expressing a ts+ alpha 4 protein and an HSV-2 gB. The properties of the alpha 4/c113 cell line suggest that it may express other viral genes induced by alpha 4 protein constitutively, provided that the product is not toxic to the cells. Images PMID:3022001

Nonlinear Hall effect and multichannel conduction in LaTiO3/SrTiO3 superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jun Sung; Seo, Sung Seok A; Chisholm, Matthew F

2010-01-01

We report magnetotransport properties of heterointerfaces between the Mott insulator LaTiO{sub 3} and the band insulator SrTiO{sub 3} in a delta-doping geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduction of interfacial charges generated by an electronic reconstruction. In particular, the formation of a highly mobile conduction channel revealed by our data is explained by the greatly increased dielectric permeability of SrTiO{sub 3} at low temperatures and its electric fieldmore » dependence reflects the spatial distribution of the quasi-two-dimensional electron gas.« less

Effects of stoichiometry, purity, etching and distilling on resistance of MgB 2 pellets and wire segments

NASA Astrophysics Data System (ADS)

Ribeiro, R. A.; Bud'ko, S. L.; Petrovic, C.; Canfield, P. C.

2002-11-01

We present a study of the effects of non-stoichiometry, boron purity, wire diameter and post-synthesis treatment (etching and Mg distilling) on the temperature dependent resistance and resistivity of sintered MgB 2 pellets and wire segments. Whereas the residual resistivity ratio (RRR) varies between RRR≈4 to RRR⩾20 for different boron purity, it is only moderately affected by non-stoichiometry (from 20% Mg deficiency to 20% Mg excess) and is apparently independent of wire diameter and presence of Mg metal traces on the wire surface. The obtained set of data indicates that RRR values in excess of 20 and residual resistivities as low as ρ 0≈0.4 μΩ cm are intrinsic material properties of high purity MgB 2.

Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

NASA Astrophysics Data System (ADS)

Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

2013-09-01

We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

Characterization of pulsed laser deposition grown V2O3 converted VO2

NASA Astrophysics Data System (ADS)

Majid, Suhail; Shukla, D. K.; Rahman, F.; Gautam, Kamini; Sathe, V. G.; Choudhary, R. J.; Phase, D. M.

2016-10-01

Controllable tuning of Metal-insulator transition in VxOy thin film has been a field of extensive research. However controlled synthesis of desired Vanadium oxide phase is a challenging task. We have successfully achieved VO2 phase on Silicon substrate after post deposition annealing treatment to the PLD grown as deposited V2O3 thin films. The annealed thin film was characterized by x-ray diffraction (XRD), resistivity, Raman spectroscopy, X-ray absorption spectroscopy (XAS) and X-ray photoelectron spectroscopy (XPS) measurements. XRD confirms the crystalline nature and growth of VO2 phase in thin film. The characteristic MIT was observed from resistivity measurements and transition temperature appeared at lower value around 336 K, compared to bulk VO2. The structural transition accompanied with MIT from lower temperature monoclinic phase to higher temperature Rutile phase became evident from temperature dependent Raman measurements. Chemical state of vanadium was examined using XAS and XPS measurements which confirm the presence of +4 oxidation state of vanadium in thin film.

γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

NASA Astrophysics Data System (ADS)

Teffahi, A.; Hamri, D.; Djeghlouf, A.; Abboun Abid, M.; Saidane, A.; Al Saqri, N.; Felix, J. F.; Henini, M.

2018-06-01

Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90-290 K temperature range and 50-2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric constant, dielectric loss, tangent loss and ac conductivity. It is shown that exposure to γ-rays irradiation leads to reduction in effective trap density believed to result from radiation-induced traps annulations. An increase in series resistance is attributed to a net doping reduction. Dielectric constant (ε') shows usual step-like transitions with corresponding relaxation peaks in dielectric loss. These peaks shift towards lower temperature as frequency decrease. Temperature dependant ac conductivity followed an Arrhenius relation with activation energy of 153 meV in the 200-290 K temperature range witch correspond to As vacancy. The results indicate that γ-rays irradiation improves the dielectric and electrical properties of the diode due to the defect annealing effect.

Development of novel nonvolatile memory devices using the colossal magnetoresistive oxide praseodymium-calcium-manganese trioxide

NASA Astrophysics Data System (ADS)

Papagianni, Christina

Pr0.7Ca0.3MnO3 (PCMO) manganese oxide belongs in the family of materials known as transition metal oxides. These compounds have received increased attention due to their perplexing properties such as Colossal Magnetoresistance effect, Charge-Ordered phase, existence of phase-separated states etc. In addition, it was recently discovered that short electrical pulses in amplitude and duration are sufficient to induce reversible and non-volatile resistance changes in manganese perovskite oxide thin films at room temperature, known as the EPIR effect. The existence of the EPIR effect in PCMO thin films at room temperature opens a viable way for the realization of fast, high-density, low power non-volatile memory devices in the near future. The purpose of this study is to investigate, optimize and understand the properties of Pr0.7Ca0.3MnO 3 (PCMO) thin film devices and to identify how these properties affect the EPIR effect. PCMO thin films were deposited on various substrates, such as metals, and conducting and insulating oxides, by pulsed laser and radio frequency sputtering methods. Our objective was to understand and compare the induced resistive states. We attempted to identify the induced resistance changes by considering two resistive models to be equivalent to our devices. Impedance spectroscopy was also utilized in a wide temperature range that was extended down to 70K. Fitted results of the temperature dependence of the resistance states were also included in this study. In the same temperature range, we probed the resistance changes in PCMO thin films and we examined whether the phase transitions affect the EPIR effect. In addition, we included a comparison of devices with electrodes consisting of different size and different materials. We demonstrated a direct relation between the EPIR effect and the phase diagram of bulk PCMO samples. A model that could account for the observed EPIR effect is presented.

Antiferromagnetic spin correlations and pseudogaplike behavior in Ca(Fe 1-xCo x) 2As 2 studied by 75As nuclear magnetic resonance and anisotropic resistivity

DOE PAGES

Cui, J.; Roy, B.; Tanatar, M. A.; ...

2015-11-06

We report 75As nuclear magnetic resonance (NMR) measurements of single-crystalline Ca(Fe 1–xCo x) 2As 2 (x=0.023, 0.028, 0.033, and 0.059) annealed at 350°C for 7 days. From the observation of a characteristic shape of 75As NMR spectra in the stripe-type antiferromagnetic (AFM) state, as in the case of x=0 (T N=170 K), clear evidence for the commensurate AFM phase transition with the concomitant structural phase transition is observed in x=0.023 (T N=106 K) and x=0.028 (T N=53 K). Through the temperature dependence of the Knight shifts and the nuclear spin lattice relaxation rates (1/T 1), although stripe-type AFM spin fluctuationsmore » are realized in the paramagnetic state as in the case of other iron pnictide superconductors, we found a gradual decrease of the AFM spin fluctuations below a crossover temperature T* that was nearly independent of Co-substitution concentration, and it is attributed to a pseudogaplike behavior in the spin excitation spectra of these systems. The T* feature finds correlation with features in the temperature-dependent interplane resistivity, ρc(T), but not with the in-plane resistivity ρa(T). The temperature evolution of anisotropic stripe-type AFM spin fluctuations is tracked in the paramagnetic and pseudogap phases by the 1/T 1 data measured under magnetic fields parallel and perpendicular to the c axis. As a result, based on our NMR data, we have added a pseudogaplike phase to the magnetic and electronic phase diagram of Ca(Fe 1–xCo x) 2As 2.« less

Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bayu Aji, L. B.; Wallace, J. B.; Shao, L.

Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a changemore » in the dominant defect interaction mechanism at ~100 °C. As a result, the understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.« less

Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

DOE PAGES

Bayu Aji, L. B.; Wallace, J. B.; Shao, L.; ...

2016-08-03

Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a changemore » in the dominant defect interaction mechanism at ~100 °C. As a result, the understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.« less

Impact of thermal stress on evolutionary trajectories of pathogen resistance in three-spined stickleback (Gasterosteus aculeatus)

PubMed Central

2014-01-01

Background Pathogens are a major regulatory force for host populations, especially under stressful conditions. Elevated temperatures may enhance the development of pathogens, increase the number of transmission stages, and can negatively influence host susceptibility depending on host thermal tolerance. As a net result, this can lead to a higher prevalence of epidemics during summer months. These conditions also apply to marine ecosystems, where possible ecological impacts and the population-specific potential for evolutionary responses to changing environments and increasing disease prevalence are, however, less known. Therefore, we investigated the influence of thermal stress on the evolutionary trajectories of disease resistance in three marine populations of three-spined sticklebacks Gasterosteus aculeatus by combining the effects of elevated temperature and infection with a bacterial strain of Vibrio sp. using a common garden experiment. Results We found that thermal stress had an impact on fish weight and especially on survival after infection after only short periods of thermal acclimation. Environmental stress reduced genetic differentiation (QST) between populations by releasing cryptic within-population variation. While life history traits displayed positive genetic correlations across environments with relatively weak genotype by environment interactions (GxE), environmental stress led to negative genetic correlations across environments in pathogen resistance. This reversal of genetic effects governing resistance is probably attributable to changing environment-dependent virulence mechanisms of the pathogen interacting differently with host genotypes, i.e. GPathogenxGHostxE or (GPathogenxE)x(GHostxE) interactions, rather than to pure host genetic effects, i.e. GHostxE interactions. Conclusion To cope with climatic changes and the associated increase in pathogen virulence, host species require wide thermal tolerances and pathogen-resistant genotypes. The higher resistance we found for some families at elevated temperatures showed that there is evolutionary potential for resistance to Vibrio sp. in both thermal environments. The negative genetic correlation of pathogen resistance between thermal environments, on the other hand, indicates that adaptation to current conditions can be a weak predictor for performance in changing environments. The observed feedback on selective gradients exerted on life history traits may exacerbate this effect, as it can also modify the response to selection for other vital components of fitness. PMID:25927537

Room temperature magnetism and metal to semiconducting transition in dilute Fe doped Sb1-xSex semiconducting alloy thin films

NASA Astrophysics Data System (ADS)

Agrawal, Naveen; Sarkar, Mitesh; Chawda, Mukesh; Ganesan, V.; Bodas, Dhananjay

2015-02-01

The magnetism was observed in very dilute Fe doped alloy thin film Fe0.008Sb1-xSex, for x = 0.01 to 0.10. These thin films were grown on silicon substrate using thermal evaporation technique. Structural, electrical, optical, charge carrier concentration measurement, surface morphology and magnetic properties were observed using glancing incidence x-ray diffraction (GIXRD), four probe resistivity, photoluminescence, Hall measurement, atomic force microscopy (AFM) and magnetic force microscopy (MFM) techniques, respectively. No peaks of iron were seen in GIXRD. The resistivity results show that activation energy increases with increase in selenium (Se) concentration. The Arrhenius plot reveals metallic behavior below room temperature. The low temperature conduction is explained by variable range-hopping mechanism, which fits very well in the temperature range 150-300 K. The decrease in density of states has been observed with increasing selenium concentration (x = 0.01 to 0.10). There is a metal-to-semiconductor phase transition observed above room temperature. This transition temperature is Se concentration dependent. The particle size distribution ˜47-61 nm is evaluated using AFM images. These thin films exhibit ferromagnetic interactions at room temperature.

Low-temperature electronic transport in single K(0.27)MnO(2)·0.5H(2)O nanowires: enhanced electron-electron interaction.

PubMed

Long, Y Z; Yin, Z H; Chen, Z J; Jin, A Z; Gu, C Z; Zhang, H T; Chen, X H

2008-05-28

The current-voltage (I-V) characteristics and electrical resistivity of isolated potassium manganese oxide (K(0.27)MnO(2)·0.5H(2)O) nanowires prepared by a simple hydrothermal method were investigated over a wide temperature range from 300 to 4 K. With lowering temperature, a transition from linear to nonlinear I-V curves was observed around 50 K, and a clear zero bias anomaly (i.e., Coulomb gap-like structure) appeared on the differential conductance (dI/dV) curves, possibly due to enhanced electron-electron interaction at low temperatures. The temperature dependence of resistivity, [Formula: see text], follows the Efros-Shklovskii (ES) law, as expected in the presence of a Coulomb gap. Here we note that both the ES law and Coulomb blockade can in principle lead to a reduced zero bias conductance at low temperatures; in this study we cannot exclude the possibility of Coulomb-blockade transport in the measured nanowires, especially in the low-temperature range. It is still an open question how to pin down the origin of the observed reduction to a Coulomb gap (ES law) or Coulomb blockade.

VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

PubMed Central

Zhang, Dong; Sun, Hong-Jun; Wang, Min-Huan; Miao, Li-Hua; Liu, Hong-Zhu; Zhang, Yu-Zhi; Bian, Ji-Ming

2017-01-01

Vanadium dioxide (VO2) thermochromic thin films with various thicknesses were grown on quartz glass substrates by radio frequency (RF)-plasma assisted oxide molecular beam epitaxy (O-MBE). The crystal structure, morphology and chemical stoichiometry were investigated systemically by X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) analyses. An excellent reversible metal-to-insulator transition (MIT) characteristics accompanied by an abrupt change in both electrical resistivity and optical infrared (IR) transmittance was observed from the optimized sample. Remarkably, the transition temperature (TMIT) deduced from the resistivity-temperature curve was reasonably consistent with that obtained from the temperature-dependent IR transmittance. Based on Raman measurement and XPS analyses, the observations were interpreted in terms of residual stresses and chemical stoichiometry. This achievement will be of great benefit for practical application of VO2-based smart windows. PMID:28772673

Effect of Si-doping on InAs nanowire transport and morphology

NASA Astrophysics Data System (ADS)

Wirths, S.; Weis, K.; Winden, A.; Sladek, K.; Volk, C.; Alagha, S.; Weirich, T. E.; von der Ahe, M.; Hardtdegen, H.; Lüth, H.; Demarina, N.; Grützmacher, D.; Schäpers, Th.

2011-09-01

The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature.

Creep-Fatigue Behavior of Alloy 617 at 850 and 950°C, Revision 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carroll, L.; Carroll, M.

Alloy 617 is the leading candidate material for an Intermediate Heat Exchanger (IHX) of the Very High Temperature Reactor (VHTR). To evaluate the behavior of this material in the expected service conditions, strain-controlled cyclic tests including hold times up to 9000 s at maximum tensile strain were conducted at 850 and 950 degrees C. At both temperatures, the fatigue resistance decreased when a hold time was added at peak tensile strain. The magnitude of this effect depended on the specific mechanisms and whether they resulted in a change in fracture mode from transgranular in pure fatigue to intergranular in creep-fatiguemore » for a particular temperature and strain range combination. Increases in the tensile hold duration beyond an initial value were not detrimental to the creep-fatigue resistance at 950 degrees C but did continue to degrade the lifetimes at 850 degrees C.« less

Anomalous Hall effect in ion-beam sputtered Co2FeAl full Heusler alloy thin films

NASA Astrophysics Data System (ADS)

Husain, Sajid; Kumar, Ankit; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

2017-11-01

Investigations of temperature dependent anomalous Hall effect and longitudinal resistivity in Co2FeAl (CFA) thin films grown on Si(1 0 0) at different substrate temperature Ts are reported. The scaling of the anomalous Hall conductivity (AHC) and the associated phenomenological mechanisms (intrinsic and extrinsic) are analyzed vis-à-vis influence of Ts. The intrinsic contribution to AHC is found to be dominating over the extrinsic one. The appearance of a resistivity minimum at low temperature necessitates the inclusion of quantum corrections on account of weak localization and electron-electron scattering effects whose strength reduces with increase in Ts. The study establishes that the optimization of Ts plays an important role in the improvement of atomic ordering which indicates the higher strength of spin-orbit coupling and leads to the dominant intrinsic contribution to AHC in these CFA full Heusler alloy thin films.

Anomalous Hall effect scaling in ferromagnetic thin films

NASA Astrophysics Data System (ADS)

Grigoryan, Vahram L.; Xiao, Jiang; Wang, Xuhui; Xia, Ke

2017-10-01

We propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.

Pressure effect in cuprates - manifestation of Le Chatelier's principle

NASA Astrophysics Data System (ADS)

Kallio, A.; Bräysy, V.; Hissa, J.

We show that the pressure dependence of Tc, the Hall coefficient scaling, resistivities etc. can be explained by the chemical equilibrium of bosons and their decay products the fermions applying essentially the classical theory. Above a temperature TBL the bosons form a lattice, which causes diffusion term in τab-1. Treatment of equilibrium in a magnetic field explains the dependence of quantities like the penetration depth λab uponm the field.

Current-voltage characteristics of manganite-titanite perovskite junctions.

PubMed

Ifland, Benedikt; Peretzki, Patrick; Kressdorf, Birte; Saring, Philipp; Kelling, Andreas; Seibt, Michael; Jooss, Christian

2015-01-01

After a general introduction into the Shockley theory of current voltage (J-V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite-titanate p-n heterojunctions made of n-doped SrTi1- y Nb y O3, y = 0.002 and p-doped Pr1- x Ca x MnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC) in a thin cross plane lamella of the junction. In the J-V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER) effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron-polaron hole-polaron pair generation and separation at the interface.

Current–voltage characteristics of manganite–titanite perovskite junctions

PubMed Central

Ifland, Benedikt; Peretzki, Patrick; Kressdorf, Birte; Saring, Philipp; Kelling, Andreas; Seibt, Michael

2015-01-01

Summary After a general introduction into the Shockley theory of current voltage (J–V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite–titanate p–n heterojunctions made of n-doped SrTi1− yNbyO3, y = 0.002 and p-doped Pr1− xCaxMnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC) in a thin cross plane lamella of the junction. In the J–V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER) effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron–polaron hole–polaron pair generation and separation at the interface. PMID:26199851

Performance of a Heating Block System Designed for Studying the Heat Resistance of Bacteria in Foods

NASA Astrophysics Data System (ADS)

Kou, Xiao-Xi; Li, Rui; Hou, Li-Xia; Huang, Zhi; Ling, Bo; Wang, Shao-Jin

2016-07-01

Knowledge of bacteria’s heat resistance is essential for developing effective thermal treatments. Choosing an appropriate test method is important to accurately determine bacteria’s heat resistances. Although being a major factor to influence the thermo-tolerance of bacteria, the heating rate in samples cannot be controlled in water or oil bath methods due to main dependence on sample’s thermal properties. A heating block system (HBS) was designed to regulate the heating rates in liquid, semi-solid and solid foods using a temperature controller. Distilled water, apple juice, mashed potato, almond powder and beef were selected to evaluate the HBS’s performance by experiment and computer simulation. The results showed that the heating rates of 1, 5 and 10 °C/min with final set-point temperatures and holding times could be easily and precisely achieved in five selected food materials. A good agreement in sample central temperature profiles was obtained under various heating rates between experiment and simulation. The experimental and simulated results showed that the HBS could provide a sufficiently uniform heating environment in food samples. The effect of heating rate on bacterial thermal resistance was evaluated with the HBS. The system may hold potential applications for rapid and accurate assessments of bacteria’s thermo-tolerances.

Heat Transfer Analysis in Wire Bundles for Aerospace Vehicles

NASA Technical Reports Server (NTRS)

Rickman, S. L.; Iamello, C. J.

2016-01-01

Design of wiring for aerospace vehicles relies on an understanding of "ampacity" which refers to the current carrying capacity of wires, either, individually or in wire bundles. Designers rely on standards to derate allowable current flow to prevent exceedance of wire temperature limits due to resistive heat dissipation within the wires or wire bundles. These standards often add considerable margin and are based on empirical data. Commercial providers are taking an aggressive approach to wire sizing which challenges the conventional wisdom of the established standards. Thermal modelling of wire bundles may offer significant mass reduction in a system if the technique can be generalized to produce reliable temperature predictions for arbitrary bundle configurations. Thermal analysis has been applied to the problem of wire bundles wherein any or all of the wires within the bundle may carry current. Wire bundles present analytical challenges because the heat transfer path from conductors internal to the bundle is tortuous, relying on internal radiation and thermal interface conductance to move the heat from within the bundle to the external jacket where it can be carried away by convective and radiative heat transfer. The problem is further complicated by the dependence of wire electrical resistivity on temperature. Reduced heat transfer out of the bundle leads to higher conductor temperatures and, hence, increased resistive heat dissipation. Development of a generalized wire bundle thermal model is presented and compared with test data. The steady state heat balance for a single wire is derived and extended to the bundle configuration. The generalized model includes the effects of temperature varying resistance, internal radiation and thermal interface conductance, external radiation and temperature varying convective relief from the free surface. The sensitivity of the response to uncertainties in key model parameters is explored using Monte Carlo analysis.

A Fan-Tastic Quantitative Exploration of Ohm's Law

ERIC Educational Resources Information Center

Mitchell, Brandon; Ekey, Robert; McCullough, Roy; Reitz, William

2018-01-01

Teaching simple circuits and Ohm's law to students in the introductory classroom has been extensively investigated through the common practice of using incandescent light bulbs to help students develop a conceptual foundation before moving on to quantitative analysis. However, the bulb filaments' resistance has a large temperature dependence,…

Thermoelectric Exhaust Heat Recovery with Heat Pipe-Based Thermal Control

NASA Astrophysics Data System (ADS)

Brito, F. P.; Martins, Jorge; Hançer, Esra; Antunes, Nuno; Gonçalves, L. M.

2015-06-01

Heat pipe (HP)-based heat exchangers can be used for very low resistance heat transfer between a hot and a cold source. Their operating temperature depends solely on the boiling point of their working fluid, so it is possible to control the heat transfer temperature if the pressure of the HP can be adjusted. This is the case of the variable conductance HPs (VCHP). This solution makes VCHPs ideal for the passive control of thermoelectric generator (TEG) temperature levels. The present work assesses, both theoretically and experimentally, the merit of the aforementioned approach. A thermal and electrical model of a TEG with VCHP assist is proposed. Experimental results obtained with a proof of concept prototype attached to a small single-cylinder engine are presented and used to validate the model. It was found that the HP heat exchanger indeed enables the TEG to operate at a constant, optimal temperature in a passive and safe way, and with a minimal overall thermal resistance, under part load, it effectively reduces the active module area without deprecating the temperature level of the active modules.

Thin metal thermistors for shock temperature measurements of polymers

NASA Astrophysics Data System (ADS)

Taylor, N. E.; Williamson, D. M.; Picard, A.; Cunningham, L. K.; Jardine, A. P.

2015-06-01

Equations of state can be used to predict the relationship between pressure, volume and temperature. However, in shock physics, they are usually only constrained by experimental observations of pressure and volume. Direct observation of temperature in a shock is therefore valuable in constraining equations of state. Bloomquist and Sheffield (1980, 1981) and Rosenberg and Partom (1984) have attempted such observations in poly(methyl methacrylate) (PMMA). However, their results disagree strongly above 2 GPa shock pressure. The present authors previously presented an improved fabrication technique, to examine this outstanding issue. This technique made use of the fact that the electrical resistivity of most metals is a known function of both pressure and temperature. By fabricating a thin metal thermistor gauge and measuring its change in resistance during a shock experiment of known pressure, its temperature can be recovered. Heat transfer into the gauge depends strongly on the gauge dimensions and the thermal conductivity of the shocked PMMA. Here we present several improvements to the technique. By varying the gauge thickness over the range 100 nm to 10 μ m we assess the heat transfer into the gauge.

Superconducting compounds and alloys research

NASA Technical Reports Server (NTRS)

Otto, G.

1975-01-01

Resistivity measurements as a function of temperature were performed on alloys of the binary material system In sub(1-x) Bi sub x for x varying between 0 and 1. It was found that for all single-phase alloys (the pure elements, alpha-In, and the three intermetallic compounds) at temperatures sufficiently above the Debye-temperature, the resistivity p can be expressed as p = a sub o T(n), where a sub o and n are composition-dependent constants. The same exponential relationship can also be applied for the sub-system In-In2Bi, when the two phases are in compositional equilibrium. Superconductivity measurements on single and two-phase alloys can be explained with respect to the phase diagram. There occur three superconducting phases (alpha-In, In2Bi, and In5Bi3) with different transition temperatures in the alloying system. The magnitude of the transition temperatures for the various intermetallic phases of In-Bi is such that the disappearance or occurrence of a phase in two component alloys can be demonstrated easily by means of superconductivity measurements.

Electrical resistivity across the tricriticality in itinerant ferromagnet

NASA Astrophysics Data System (ADS)

Opletal, P.; Prokleška, J.; Valenta, J.; Sechovský, V.

2018-05-01

We investigate the discontinuous ferromagnetic phase diagram near tricritical point in UCo1-xRuxAl compounds by electrical resistivity measurements. Separation of phases in UCo0.995Ru0.005Al at ambient pressure and in UCo0.990Ru0.010Al at pressure of 0.2 GPa and disappearance of ferromagnetism at 0.4 GPa is confirmed. The exponent of temperature dependence of electrical resistivity implies change from Fermi liquid-like behavior to non-Fermi liquid at 0.2 GPa and reaches minimum at 0.4 GPa. Our results are compared to results obtained on the pure UCoAl and explanation for different exponents is given.

Yeast multistress resistance and lag-phase characterisation during wine fermentation.

PubMed

Ferreira, David; Galeote, Virginie; Sanchez, Isabelle; Legras, Jean-Luc; Ortiz-Julien, Anne; Dequin, Sylvie

2017-09-01

Saccharomyces cerevisiae has been used to perform wine fermentation for several millennia due to its endurance and unmatched qualities. Nevertheless, at the moment of inoculation, wine yeasts must cope with specific stress factors that still challenge wine makers by slowing down or compromising the fermentation process. To better assess the role of genetic and environmental factors that govern multistress resistance during the wine fermentation lag phase, we used a factorial plan to characterise the individual and combined impact of relevant stress factors on eight S. cerevisiae and two non-S. cerevisiae wine yeast strains that are currently commercialised. The S. cerevisiae strains are very genetically diverse, belonging to the wine and flor groups, and frequently contain a previously described XVIVIII translocation that confers increased resistance to sulphites. We found that low temperature and osmotic stress substantially affected all strains, promoting considerably extended lag phases. SO2 addition had a partially temperature-dependent effect, whereas low phytosterol and thiamine concentrations impacted the lag phase in a strain-dependent manner. No major synergic effects of multistress were detected. The diversity of lag-phase durations and stress responses observed among wine strains offer new insights to better control this critical step of fermentation. © FEMS 2017. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

A new computer-aided simulation model for polycrystalline silicon film resistors

NASA Astrophysics Data System (ADS)

Ching-Yuan Wu; Weng-Dah Ken

1983-07-01

A general transport theory for the I-V characteristics of a polycrystalline film resistor has been derived by including the effects of carrier degeneracy, majority-carrier thermionic-diffusion across the space charge regions produced by carrier trapping in the grain boundaries, and quantum mechanical tunneling through the grain boundaries. Based on the derived transport theory, a new conduction model for the electrical resistivity of polycrystalline film resitors has been developed by incorporating the effects of carrier trapping and dopant segregation in the grain boundaries. Moreover, an empirical formula for the coefficient of the dopant-segregation effects has been proposed, which enables us to predict the dependence of the electrical resistivity of phosphorus-and arsenic-doped polycrystalline silicon films on thermal annealing temperature. Phosphorus-doped polycrystalline silicon resistors have been fabricated by using ion-implantation with doses ranged from 1.6 × 10 11 to 5 × 10 15/cm 2. The dependence of the electrical resistivity on doping concentration and temperature have been measured and shown to be in good agreement with the results of computer simulations. In addition, computer simulations for boron-and arsenic-doped polycrystalline silicon resistors have also been performed and shown to be consistent with the experimental results published by previous authors.