Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2010-01-01

Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.

Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum.

PubMed

Seifert, Marietta; Rane, Gayatri K; Kirbus, Benjamin; Menzel, Siegfried B; Gemming, Thomas

2015-12-19

Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 ) substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

Passive athermalization of multimode interference devices for wavelength-locking applications.

PubMed

Ruiz-Perez, Victor I; May-Arrioja, Daniel A; Guzman-Sepulveda, Jose R

2017-03-06

In this paper we demonstrate the passive, material-based athermalization of all-fiber architectures by cascading multimode interference (MMI) devices. In-line thermal compensation is achieved by including a liquid-core multimode section of variable length that allows ensuring temperature-independent operation while preserving the inherent filter-like spectral response of the MMI devices. The design of the temperature compensation unit is straightforward and its fabrication is simple. The applicability of our approach is experimentally verified by fabricating a wavelength-locked MMI laser with sensitivity of only -0.1 pm/°C, which is at least one order of magnitude lower than that achieved with other fiber optics devices.

High temperature superconductor materials and applications

NASA Technical Reports Server (NTRS)

Doane, George B., III.; Banks, Curtis; Golben, John

1990-01-01

Research on processing methods leading to a significant enhancement in the critical current densities (Jc) and the critical temperature (Tc) of high temperature superconducting in thin bulk and thin film forms. The fabrication of important devices for NASA unique applications (sensors) is investigated.

Passive temperature control based on a phase change metasurface.

PubMed

Wu, Sheng-Rui; Lai, Kuan-Lin; Wang, Chih-Ming

2018-05-16

In this paper, a tunable mid-infrared metasurface based on VO 2 phase change material is proposed for temperature control. The proposed structure consisting of a VO 2 /SiO 2 /VO 2 cavity supports a thermally switchable Fabry-Perot-like resonance mode at the transparency window of the atmosphere. Theoretically, the radiative cooling power density of the proposed metasurface can be switched to four-fold as the device temperature is below/above the phase change temperature of VO 2 . Besides radiative cooling, a passive temperature control application based on this huge cooling power switching ability is theoretically demonstrated. We believe the proposed device can be applied for small radiative cooling and temperature control applications.

Design of temperature detection device for drum of belt conveyor

NASA Astrophysics Data System (ADS)

Zhang, Li; He, Rongjun

2018-03-01

For difficult wiring and big measuring error existed in the traditional temperature detection method for drum of belt conveyor, a temperature detection device for drum of belt conveyor based on Radio Frequency(RF) communication is designed. In the device, detection terminal can collect temperature data through tire pressure sensor chip SP370 which integrates temperature detection and RF emission. The receiving terminal which is composed of RF receiver chip and microcontroller receives the temperature data and sends it to Controller Area Network(CAN) bus. The test results show that the device meets requirements of field application with measuring error ±3.73 ° and single button battery can provide continuous current for the detection terminal over 1.5 years.

REACTOR CONTROL DEVICE

DOEpatents

Graham, R.H.

1962-09-01

A wholly mechanical compact control device is designed for automatically rendering the core of a fission reactor subcritical in response to core temperatures in excess of the design operating temperature limit. The control device comprises an expansible bellows interposed between the base of a channel in a reactor core and the inner end of a fuel cylinder therein which is normally resiliently urged inwardly. The bellows contains a working fluid which undergoes a liquid to vapor phase change at a temperature substantially equal to the design temperature limit. Hence, the bellows abruptiy expands at this limiting temperature to force the fuel cylinder outward and render the core subcritical. The control device is particularly applicable to aircraft propulsion reactor service. (AEC)

PVDF Sensor Stimulated by Infrared Radiation for Temperature Monitoring in Microfluidic Devices.

PubMed

Pullano, Salvatore A; Mahbub, Ifana; Islam, Syed K; Fiorillo, Antonino S

2017-04-13

This paper presents a ferroelectric polymer-based temperature sensor designed for microfluidic devices. The integration of the sensor into a system-on-a-chip platform facilitates quick monitoring of localized temperature of a biological fluid, avoiding errors in the evaluation of thermal evolution of the fluid during analysis. The contact temperature sensor is fabricated by combining a thin pyroelectric film together with an infrared source, which stimulates the active element located on the top of the microfluidic channel. An experimental setup was assembled to validate the analytical model and to characterize the response rate of the device. The evaluation procedure and the operating range of the temperature also make this device suitable for applications where the localized temperature monitoring of biological samples is necessary. Additionally, ease of integration with standard microfluidic devices makes the proposed sensor an attractive option for in situ analysis of biological fluids.

10 CFR 431.62 - Definitions concerning commercial refrigerators, freezers and refrigerator-freezers.

Code of Federal Regulations, 2014 CFR

2014-01-01

... occupancy sensor means a device which uses passive infrared, ultrasonic, or other motion-sensing technology..., frozen, combination chilled and frozen, or variable temperature; (4) Displays or stores merchandise and... doors; (6) Is designed for pull-down temperature applications or holding temperature applications; and...

Room temperature triplet state spectroscopy of organic semiconductors.

PubMed

Reineke, Sebastian; Baldo, Marc A

2014-01-21

Organic light-emitting devices and solar cells are devices that create, manipulate, and convert excited states in organic semiconductors. It is crucial to characterize these excited states, or excitons, to optimize device performance in applications like displays and solar energy harvesting. This is complicated if the excited state is a triplet because the electronic transition is 'dark' with a vanishing oscillator strength. As a consequence, triplet state spectroscopy must usually be performed at cryogenic temperatures to reduce competition from non-radiative rates. Here, we control non-radiative rates by engineering a solid-state host matrix containing the target molecule, allowing the observation of phosphorescence at room temperature and alleviating constraints of cryogenic experiments. We test these techniques on a wide range of materials with functionalities spanning multi-exciton generation (singlet exciton fission), organic light emitting device host materials, and thermally activated delayed fluorescence type emitters. Control of non-radiative modes in the matrix surrounding a target molecule may also have broader applications in light-emitting and photovoltaic devices.

Development of Low Temperature Li-Ion Electrolytes for NASA and DoD Applications

NASA Technical Reports Server (NTRS)

Smart, M.; Ratnakumar, B.; Surampudi, S.; Plichta, E.; Hendrickson, M.; Thompson, R.; Au, G.; Behl, W.

1999-01-01

Both NASA and the U.S. Army have interest in developing secondary energy storage devices with improved low temperature performance to meet the demanding requirements of space missions and man-portable applications.

Application of Light-Emitting Diodes and Photodiodes Coupled to Optic Fibers to Study the Dependence of Liquid Viscosity on Temperature

ERIC Educational Resources Information Center

Victoria, L.; Arenas, A.

2004-01-01

A device designed to demonstrate the dependence of viscosity on temperature and to check the validity of the exponential relationship is described. The device has the advantage of versatility as it can be adapted to different types of viscosimeters.

High Per formance and Flexible Supercapacitors based on Carbonized Bamboo Fibers for Wide Temperature Applications

PubMed Central

Zequine, Camila; Ranaweera, C. K.; Wang, Z.; Singh, Sweta; Tripathi, Prashant; Srivastava, O. N.; Gupta, Bipin Kumar; Ramasamy, K.; Kahol, P. K.; Dvornic, P. R.; Gupta, Ram K.

2016-01-01

High performance carbonized bamboo fibers were synthesized for a wide range of temperature dependent energy storage applications. The structural and electrochemical properties of the carbonized bamboo fibers were studied for flexible supercapacitor applications. The galvanostatic charge-discharge studies on carbonized fibers exhibited specific capacity of ~510F/g at 0.4 A/g with energy density of 54 Wh/kg. Interestingly, the carbonized bamboo fibers displayed excellent charge storage stability without any appreciable degradation in charge storage capacity over 5,000 charge-discharge cycles. The symmetrical supercapacitor device fabricated using these carbonized bamboo fibers exhibited an areal capacitance of ~1.55 F/cm2 at room temperature. In addition to high charge storage capacity and cyclic stability, the device showed excellent flexibility without any degradation to charge storage capacity on bending the electrode. The performance of the supercapacitor device exhibited ~65% improvement at 70 °C compare to that at 10 °C. Our studies suggest that carbonized bamboo fibers are promising candidates for stable, high performance and flexible supercapacitor devices. PMID:27546225

High Per formance and Flexible Supercapacitors based on Carbonized Bamboo Fibers for Wide Temperature Applications.

PubMed

Zequine, Camila; Ranaweera, C K; Wang, Z; Singh, Sweta; Tripathi, Prashant; Srivastava, O N; Gupta, Bipin Kumar; Ramasamy, K; Kahol, P K; Dvornic, P R; Gupta, Ram K

2016-08-22

High performance carbonized bamboo fibers were synthesized for a wide range of temperature dependent energy storage applications. The structural and electrochemical properties of the carbonized bamboo fibers were studied for flexible supercapacitor applications. The galvanostatic charge-discharge studies on carbonized fibers exhibited specific capacity of ~510F/g at 0.4 A/g with energy density of 54 Wh/kg. Interestingly, the carbonized bamboo fibers displayed excellent charge storage stability without any appreciable degradation in charge storage capacity over 5,000 charge-discharge cycles. The symmetrical supercapacitor device fabricated using these carbonized bamboo fibers exhibited an areal capacitance of ~1.55 F/cm(2) at room temperature. In addition to high charge storage capacity and cyclic stability, the device showed excellent flexibility without any degradation to charge storage capacity on bending the electrode. The performance of the supercapacitor device exhibited ~65% improvement at 70 °C compare to that at 10 °C. Our studies suggest that carbonized bamboo fibers are promising candidates for stable, high performance and flexible supercapacitor devices.

High Per formance and Flexible Supercapacitors based on Carbonized Bamboo Fibers for Wide Temperature Applications

NASA Astrophysics Data System (ADS)

Zequine, Camila; Ranaweera, C. K.; Wang, Z.; Singh, Sweta; Tripathi, Prashant; Srivastava, O. N.; Gupta, Bipin Kumar; Ramasamy, K.; Kahol, P. K.; Dvornic, P. R.; Gupta, Ram K.

2016-08-01

High performance carbonized bamboo fibers were synthesized for a wide range of temperature dependent energy storage applications. The structural and electrochemical properties of the carbonized bamboo fibers were studied for flexible supercapacitor applications. The galvanostatic charge-discharge studies on carbonized fibers exhibited specific capacity of ~510F/g at 0.4 A/g with energy density of 54 Wh/kg. Interestingly, the carbonized bamboo fibers displayed excellent charge storage stability without any appreciable degradation in charge storage capacity over 5,000 charge-discharge cycles. The symmetrical supercapacitor device fabricated using these carbonized bamboo fibers exhibited an areal capacitance of ~1.55 F/cm2 at room temperature. In addition to high charge storage capacity and cyclic stability, the device showed excellent flexibility without any degradation to charge storage capacity on bending the electrode. The performance of the supercapacitor device exhibited ~65% improvement at 70 °C compare to that at 10 °C. Our studies suggest that carbonized bamboo fibers are promising candidates for stable, high performance and flexible supercapacitor devices.

High-performance silicon photonics technology for telecommunications applications.

PubMed

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-04-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

High-performance silicon photonics technology for telecommunications applications

PubMed Central

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-01-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge–based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge–based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications. PMID:27877659

High-performance silicon photonics technology for telecommunications applications

NASA Astrophysics Data System (ADS)

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-04-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

Giant Room-Temperature Magnetodielectric Response in a MOF at 0.1 Tesla.

PubMed

Chen, Li-Hong; Guo, Jiang-Bin; Wang, Xuan; Dong, Xin-Wei; Zhao, Hai-Xia; Long, La-Sheng; Zheng, Lan-Sun

2017-11-01

A giant room-temperature magnetodielectric (MD) response upon the application of a small magnetic field is of fundamental importance for the practical application of a new generation of devices. Here, the giant room-temperature magnetodielectric response is demonstrated in the metal-organic framework (MOF) of [NH 2 (CH 3 ) 2 ] n [Fe III Fe II (1- x ) Ni II x (HCOO) 6 ] n (x ≈ 0.63-0.69) (1) with its MD coefficient remaining between -20% and -24% in the 300-410 K temperature range, even at 0.1 T. Because a room-temperature magnetodielectric response has never been observed in MOFs, the present work not only provides a new type of magnetodielectric material but also takes a solid step toward the practical application of MOFs in a new generation of devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advanced development of double-injection, deep-impurity semiconductor switches

NASA Technical Reports Server (NTRS)

Hanes, M. H.

1987-01-01

Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

Tungsten as a Chemically-Stable Electrode Material on Ga-Containing Piezoelectric Substrates Langasite and Catangasite for High-Temperature SAW Devices

PubMed Central

Rane, Gayatri K.; Seifert, Marietta; Menzel, Siegfried; Gemming, Thomas; Eckert, Jürgen

2016-01-01

Thin films of tungsten on piezoelectric substrates La3Ga5SiO14 (LGS) and Ca3TaGa3Si2O14 (CTGS) have been investigated as a potential new electrode material for interdigital transducers for surface acoustic wave-based sensor devices operating at high temperatures up to 800 °C under vacuum conditions. Although LGS is considered to be suitable for high-temperature applications, it undergoes chemical and structural transformation upon vacuum annealing due to diffusion of gallium and oxygen. This can alter the device properties depending on the electrode nature, the annealing temperature, and the duration of the application. Our studies present evidence for the chemical stability of W on these substrates against the diffusion of Ga/O from the substrate into the film, even upon annealing up to 800 °C under vacuum conditions using Auger electron spectroscopy and energy-dispersive X-ray spectroscopy, along with local studies using transmission electron microscopy. Additionally, the use of CTGS as a more stable substrate for such applications is indicated. PMID:28787898

Integrated pressure and temperature sensor with high immunity against external disturbance for flexible endoscope operation

NASA Astrophysics Data System (ADS)

Maeda, Yusaku; Maeda, Kohei; Kobara, Hideki; Mori, Hirohito; Takao, Hidekuni

2017-04-01

In this study, an integrated pressure and temperature sensor device for a flexible endoscope with long-term stability in in vivo environments was developed and demonstrated. The sensor, which is embedded in the thin wall of the disposable endoscope hood, is intended for use in endoscopic surgery. The device surface is coated with a Cr layer to prevent photoelectronic generation induced by the strong light of the endoscope. The integrated temperature sensor allows compensation for the effect of the temperature drift on a pressure signal. The fabricated device pressure resolution is 0.4 mmHg; the corresponding pressure error is 3.2 mmHg. The packaged device was used in a surgical simulation in an animal experiment. Pressure and temperature monitoring was achieved even in a pH 1 acid solution. The device enables intraluminal pressure and temperature measurements of the stomach, which facilitate the maintenance of internal stomach conditions. The applicability of the sensor was successfully demonstrated in animal experiments.

High temperature electronics applications in space exploration

NASA Technical Reports Server (NTRS)

Jurgens, R. F.

1981-01-01

The extension of the range of operating temperatures of electronic components and systems for planetary exploration is examined. In particular, missions which utilize balloon-borne instruments to study the Venusian and Jovian atmospheres are discussed. Semiconductor development and devices including power sources, ultrastable oscillators, transmitters, antennas, electromechanical devices, and deployment systems are addressed.

Interconnect patterns for printed organic thermoelectric devices with large fill factors

NASA Astrophysics Data System (ADS)

Gordiz, Kiarash; Menon, Akanksha K.; Yee, Shannon K.

2017-09-01

Organic materials can be printed into thermoelectric (TE) devices for low temperature energy harvesting applications. The output voltage of printed devices is often limited by (i) small temperature differences across the active materials attributed to small leg lengths and (ii) the lower Seebeck coefficient of organic materials compared to their inorganic counterparts. To increase the voltage, a large number of p- and n-type leg pairs is required for organic TEs; this, however, results in an increased interconnect resistance, which then limits the device output power. In this work, we discuss practical concepts to address this problem by positioning TE legs in a hexagonal closed-packed layout. This helps achieve higher fill factors (˜91%) than conventional inorganic devices (˜25%), which ultimately results in higher voltages and power densities due to lower interconnect resistances. In addition, wiring the legs following a Hilbert spacing-filling pattern allows for facile load matching to each application. This is made possible by leveraging the fractal nature of the Hilbert interconnect pattern, which results in identical sub-modules. Using the Hilbert design, sub-modules can better accommodate non-uniform temperature distributions because they naturally self-localize. These device design concepts open new avenues for roll-to-roll printing and custom TE module shapes, thereby enabling organic TE modules for self-powered sensors and wearable electronic applications.

Thermally activated hysteresis in high quality graphene/h-BN devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cadore, A. R., E-mail: alissoncadore@gmail.com, E-mail: lccampos@fisica.ufmg.br; Mania, E.; Lacerda, R. G.

2016-06-06

We report on gate hysteresis of resistance in high quality graphene/hexagonal boron nitride (h-BN) devices. We observe a thermally activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375 K. In order to investigate the origin of the hysteretic phenomenon, we compare graphene/h-BN heterostructure devices with SiO{sub 2}/Si back gate electrodes to devices with graphite back gate electrodes. The gate hysteretic behavior of the resistance is present only in devices with an h-BN/SiO{sub 2} interface and is dependent on the orientation of the applied gate electric field and sweep rate. We describe a phenomenologicalmore » model which captures all of our findings based on charges trapped at the h-BN/SiO{sub 2} interface. Such hysteretic behavior in graphene resistance must be considered in high temperature applications for graphene devices and may open new routes for applications in digital electronics and memory devices.« less

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

NASA Astrophysics Data System (ADS)

Shim, Jaewoo; Oh, Seyong; Kang, Dong-Ho; Jo, Seo-Hyeon; Ali, Muhammad Hasnain; Choi, Woo-Young; Heo, Keun; Jeon, Jaeho; Lee, Sungjoo; Kim, Minwoo; Song, Young Jae; Park, Jin-Hong

2016-11-01

Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

PubMed Central

Shim, Jaewoo; Oh, Seyong; Kang, Dong-Ho; Jo, Seo-Hyeon; Ali, Muhammad Hasnain; Choi, Woo-Young; Heo, Keun; Jeon, Jaeho; Lee, Sungjoo; Kim, Minwoo; Song, Young Jae; Park, Jin-Hong

2016-01-01

Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research. PMID:27819264

High-Temperature Optical Sensor

NASA Technical Reports Server (NTRS)

Adamovsky, Grigory; Juergens, Jeffrey R.; Varga, Donald J.; Floyd, Bertram M.

2010-01-01

A high-temperature optical sensor (see Figure 1) has been developed that can operate at temperatures up to 1,000 C. The sensor development process consists of two parts: packaging of a fiber Bragg grating into a housing that allows a more sturdy thermally stable device, and a technological process to which the device is subjected to in order to meet environmental requirements of several hundred C. This technology uses a newly discovered phenomenon of the formation of thermally stable secondary Bragg gratings in communication-grade fibers at high temperatures to construct robust, optical, high-temperature sensors. Testing and performance evaluation (see Figure 2) of packaged sensors demonstrated operability of the devices at 1,000 C for several hundred hours, and during numerous thermal cycling from 400 to 800 C with different heating rates. The technology significantly extends applicability of optical sensors to high-temperature environments including ground testing of engines, flight propulsion control, thermal protection monitoring of launch vehicles, etc. It may also find applications in such non-aerospace arenas as monitoring of nuclear reactors, furnaces, chemical processes, and other hightemperature environments where other measurement techniques are either unreliable, dangerous, undesirable, or unavailable.

Collaborative designing and job satisfaction of airplane manufacturing engineers: A case study

NASA Astrophysics Data System (ADS)

Johnson, Michael David, Sr.

The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and demand for more efficient power electronics for telecommunications has driven research into AlGaN based high electron mobility transistors (HEMTs). However, the group III-nitrides material properties make them attractive for several other applications that have not received as much attention. This work focuses on developing group III-nitride based devices for novel applications. GaN is a robust, chemically inert, piezoelectric material, making it an ideal candidate for surface acoustic wave (SAW) devices designed for high temperature and/or harsh environment sensors. In this work, SAW devices based on GaN are developed for use in high temperature gas or chemical sensor applications. To increase device sensitivity, while maintaining a simple one-step photolithography fabrication process, devices were designed to operate at high harmonic frequencies. This allows for GHz regime operation without sub-micron fabrication. One potential market for this technology is continuous emissions monitoring of combustion gas vehicles. In addition to SAW devices, high electron mobility transistors (HEMTs) were developed. The epitaxial structure was characterized and the 2-D electron gas concentrations were simulated and compared to experimental results. Device fabrication processes were developed and are outlined. Fabricated devices were electrically measured and device performance is discussed.

PLASMA DEVICE

DOEpatents

Baker, W.R.; Brathenahl, A.; Furth, H.P.

1962-04-10

A device for producing a confined high temperature plasma is described. In the device the concave inner surface of an outer annular electrode is disposed concentrically about and facing the convex outer face of an inner annular electrode across which electrodes a high potential is applied to produce an electric field there between. Means is provided to create a magnetic field perpendicular to the electric field and a gas is supplied at reduced pressure in the area therebetween. Upon application of the high potential, the gas between the electrodes is ionized, heated, and under the influence of the electric and magnetic fields there is produced a rotating annular plasma disk. The ionized plasma has high dielectric constant properties. The device is useful as a fast discharge rate capacitor, in controlled thermonuclear research, and other high temperature gas applications. (AEC)

Thermoelectric Control Of Temperatures Of Pressure Sensors

NASA Technical Reports Server (NTRS)

Burkett, Cecil G., Jr.; West, James W.; Hutchinson, Mark A.; Lawrence, Robert M.; Crum, James R.

1995-01-01

Prototype controlled-temperature enclosure containing thermoelectric devices developed to house electronically scanned array of pressure sensors. Enclosure needed because (1) temperatures of transducers in sensors must be maintained at specified set point to ensure proper operation and calibration and (2) sensors sometimes used to measure pressure in hostile environments (wind tunnels in original application) that are hotter or colder than set point. Thus, depending on temperature of pressure-measurement environment, thermoelectric devices in enclosure used to heat or cool transducers to keep them at set point.

Ultra-low input power long-wavelength GaSb type-I laser diodes at 2.7-3.0 μm

NASA Astrophysics Data System (ADS)

Vizbaras, Augustinas; Greibus, Mindaugas; Dvinelis, Edgaras; Trinkūnas, Augustinas; Kovalenkovas, Deividas; Šimonytė, Ieva; Vizbaras, Kristijonas

2014-02-01

Mid-infrared spectral region (2-4 μm) is gaining significant attention recently due to the presence of numerous enabling applications in the field of gas sensing, medical, environmental and defense applications. Major requirement for these applications is the availability of laser sources in this spectral window. Type-I GaSb-based laser diodes are ideal candidates for these applications being compact, electrically pumped, power efficient and able to operate at room temperature in continuous-wave. Moreover, due to the nature of type-I transition; these devices have a characteristic low operation voltage, typically below 1 V, resulting in low power consumption, and high-temperature of operation. In this work, we present recent progress of 2.7 μm - 3.0 μm wavelength single-spatial mode GaSb type-I laser diode development at Brolis Semiconductors. Experimental device structures were grown by solid-source multi-wafer MBE, consisting of an active region with 2 compressively strained (~1.3 %-1.5 %) GaInAsSb quantum wells with GaSb barriers for 2.7 μm devices and quinternary AlGaInAsSb barriers for 3.0 μm devices. Epi-wafers were processed into a narrow-ridge (2-4 μm) devices and mounted p-side up on CuW heatsink. Devices exhibited very low CW threshold powers of < 100 mW, and single spatial mode (TE00) operation with room-temperature output powers up to 40 mW in CW mode. Operating voltage was as low as 1.2 V at 1.2 A. As-cleaved devices worked CW up to 50 deg C.

Wearable sweat detector device design for health monitoring and clinical diagnosis

NASA Astrophysics Data System (ADS)

Wu, Qiuchen; Zhang, Xiaodong; Tian, Bihao; Zhang, Hongyan; Yu, Yang; Wang, Ming

2017-06-01

Miniaturized sensor is necessary part for wearable detector for biomedical applications. Wearable detector device is indispensable for online health care. This paper presents a concept of an wearable digital health monitoring device design for sweat analysis. The flexible sensor is developed to quantify the amount of hydrogen ions in sweat and skin temperature in real time. The detection system includes pH sensor, temperature sensor, signal processing module, power source, microprocessor, display module and so on. The sweat monitoring device is designed for sport monitoring or clinical diagnosis.

Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Simulation of Aluminum Micro-mirrors for Space Applications at Cryogenic Temperatures

NASA Technical Reports Server (NTRS)

Kuhn, J. L.; Dutta, S. B.; Greenhouse, M. A.; Mott, D. B.

2000-01-01

Closed form and finite element models are developed to predict the device response of aluminum electrostatic torsion micro-mirrors fabricated on silicon substrate for space applications at operating temperatures of 30K. Initially, closed form expressions for electrostatic pressure arid mechanical restoring torque are used to predict the pull-in and release voltages at room temperature. Subsequently, a detailed mechanical finite element model is developed to predict stresses and vertical beam deflection induced by the electrostatic and thermal loads. An incremental and iterative solution method is used in conjunction with the nonlinear finite element model and closed form electrostatic equations to solve. the coupled electro-thermo-mechanical problem. The simulation results are compared with experimental measurements at room temperature of fabricated micro-mirror devices.

Microwave Switching and Attenuation with Superconductors.

NASA Astrophysics Data System (ADS)

Poulin, Grant Darcy

1995-01-01

The discovery of high temperature superconducting (HTS) materials having a critical temperature above the boiling point of liquid nitrogen has generated a large amount of interest in both the basic and applied scientific communities. Considerable research effort has been expended in developing HTS microwave devices, since thin film, passive, microwave components will likely be the first area to be successfully commercialized. This thesis describes a new thin film HTS microwave device that can be operated as a switch or as a continuously variable attenuator. It is well suited for low power analog signal control applications and can easily be integrated with other HTS devices. Due to its small size and mass, the device is expected to find application as a receiver protection switch or as an automatic gain control element, both used in satellite communications receivers. The device has a very low insertion loss, and the isolation in the OFF state is continuously variable to 25 dB. With minor modifications, an isolation exceeding 50 dB is readily achievable. A patent application for the device has been filed, with the patent rights assigned to COM DEV. The device is based on an unusual non-linear response in HTS materials. Under a non-zero DC voltage bias, the current through a superconducting bridge is essentially voltage independent. We have proposed a thermal instability to account for this behaviour. Thermal modelling in conjunction with direct temperature measurements were used to confirm the validity of the model. We have developed a detailed model explaining the microwave response of the device. The model accurately predicts the microwave attenuation as a function of the applied DC control voltage and fully explains the device operation. A key feature is that the device acts as a pure resistive element at microwave frequencies, with no reactance. The resistance is continuously variable, controlled by the DC bias voltage. This distinguishes it from a PIN diode, since PIN diodes have a capacitive reactance that limits their frequency range. Measurements made to confirm the microwave model validity resulted in the development of a new cryogenic de-embedding technique. The technique allows accurate microwave measurements to be made on devices at cryogenic temperatures using only room temperature calibration standards. We have also investigated the effect of kinetic inductance on coplanar waveguide transmission lines, and indicate under what conditions kinetic inductance must be considered in transmission line design.

X-ray emission from high temperature plasmas

NASA Technical Reports Server (NTRS)

Harries, W. L.

1976-01-01

The physical processes occurring in plasma focus devices were studied. These devices produce dense high temperature plasmas, which emit X rays of hundreds of KeV energy and one to ten billion neutrons per pulse. The processes in the devices seem related to solar flare phenomena, and would also be of interest for controlled thermonuclear fusion applications. The high intensity, short duration bursts of X rays and neutrons could also possibly be used for pumping nuclear lasers.

Frugal Biotech Applications of Low-Temperature Plasma.

PubMed

Machala, Zdenko; Graves, David B

2018-06-01

Gas discharge low-temperature air plasma can be utilized for a variety of applications, including biomedical, at low cost. We term these applications 'frugal plasma' - an example of frugal innovation. We demonstrate how simple, robust, low-cost frugal plasma devices can be used to safely disinfect instruments, surfaces, and water. Copyright © 2017 Elsevier Ltd. All rights reserved.

Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

PubMed

Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

2016-05-01

We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

PubMed

Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

2016-01-06

Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

A multicolor imaging pyrometer

NASA Technical Reports Server (NTRS)

Frish, Michael B.; Frank, Jonathan H.

1989-01-01

A multicolor imaging pyrometer was designed for accurately and precisely measuring the temperature distribution histories of small moving samples. The device projects six different color images of the sample onto a single charge coupled device array that provides an RS-170 video signal to a computerized frame grabber. The computer automatically selects which one of the six images provides useful data, and converts that information to a temperature map. By measuring the temperature of molten aluminum heated in a kiln, a breadboard version of the device was shown to provide high accuracy in difficult measurement situations. It is expected that this pyrometer will ultimately find application in measuring the temperature of materials undergoing radiant heating in a microgravity acoustic levitation furnace.

A multicolor imaging pyrometer

NASA Astrophysics Data System (ADS)

Frish, Michael B.; Frank, Jonathan H.

1989-06-01

A multicolor imaging pyrometer was designed for accurately and precisely measuring the temperature distribution histories of small moving samples. The device projects six different color images of the sample onto a single charge coupled device array that provides an RS-170 video signal to a computerized frame grabber. The computer automatically selects which one of the six images provides useful data, and converts that information to a temperature map. By measuring the temperature of molten aluminum heated in a kiln, a breadboard version of the device was shown to provide high accuracy in difficult measurement situations. It is expected that this pyrometer will ultimately find application in measuring the temperature of materials undergoing radiant heating in a microgravity acoustic levitation furnace.

Prostate thermal therapy with catheter-based ultrasound devices and MR thermal monitoring

NASA Astrophysics Data System (ADS)

Diederich, Chris J.; Nau, Will H.; Kinsey, Adam; Ross, Tony; Wootton, Jeff; Juang, Titania; Butts-Pauly, Kim; Ricke, Viola; Liu, Erin H.; Chen, Jing; Bouley, Donna M.; Van den Bosch, Maurice; Sommer, Graham

2007-02-01

Four types of transurethral applicators were devised for thermal ablation of prostate combined with MR thermal monitoring: sectored tubular transducer devices with directional heating patterns; planar and curvilinear devices with narrow heating patterns; and multi-sectored tubular devices capable of dynamic angular control without applicator movement. These devices are integrated with a 4 mm delivery catheter, incorporate an inflatable cooling balloon (10 mm OD) for positioning within the prostate and capable of rotation via an MR-compatible motor. Interstitial devices (2.4 mm OD) have been developed for percutaneous implantation with directional or dynamic angular control. In vivo experiments in canine prostate under MR temperature imaging were used to evaluate the heating technology and develop treatment control strategies. MR thermal imaging in a 0.5 T interventional MRI was used to monitor temperature and thermal dose in multiple slices through the target volume. Sectored tubular, planar, and curvilinear transurethral devices produce directional coagulation zones, extending 15-20 mm radial distance to the outer prostate capsule. Sequential rotation and modulated dwell time can conform thermal ablation to selected regions. Multi-sectored transurethral applicators can dynamically control the angular heating profile and target large regions of the gland in short treatment times without applicator manipulation. Interstitial implants with directional devices can be used to effectively ablate the posterior peripheral zone of the gland while protecting the rectum. The MR derived 52 °C and lethal thermal dose contours (t 43=240 min) allowed for real-time control of the applicators and effectively defined the extent of thermal damage. Catheter-based ultrasound devices, combined with MR thermal monitoring, can produce relatively fast and precise thermal ablation of prostate, with potential for treatment of cancer or BPH.

Acousto-optical and SAW propagation characteristics of temperature stable multilayered structures based on LiNbO3 and diamond

NASA Astrophysics Data System (ADS)

Shandilya, Swati; Sreenivas, K.; Gupta, Vinay

2008-01-01

Theoretical studies on the surface acoustic wave (SAW) properties of c-axis oriented LiNbO3/IDT/diamond and diamond/IDT/128° rotated Y-X cut LiNbO3 multilayered structures have been considered. Both layered structures exhibit a positive temperature coefficient of delay (TCD) characteristic, and a zero TCD device is obtained after integrating with an over-layer of either tellurium dioxide (TeO2) or silicon dioxide (SiO2). The presence of a TeO2 over-layer enhanced the electromechanical coupling coefficients of both multilayered structures, which acts as a better temperature compensation layer than SiO2. The temperature stable TeO2/LiNbO3/IDT/diamond layered structure exhibits good electromechanical coefficient and higher phase velocity for SAW device applications. On the other hand, a high acousto-optical (AO) figure of merit (30-37) × 10-15 s3 kg-1 has been obtained for the temperature stable SiO2/diamond/IDT/LiNbO3 layered structure indicating a promising device structure for AO applications.

Polymer-based electrocaloric cooling devices

DOEpatents

Zhang, Qiming; Lu, Sheng-Guo; Li, Xinyu; Gorny, Lee; Cheng, Jiping; Neese, Bret P; Chu, Baojin

2014-10-28

Cooling devices (i.e., refrigerators or heat pumps) based on polymers which exhibit a temperature change upon application or removal of an electrical field or voltage, (e.g., fluoropolymers or crosslinked fluoropolymers that exhibit electrocaloric effect).

Human movement activity classification approaches that use wearable sensors and mobile devices

NASA Astrophysics Data System (ADS)

Kaghyan, Sahak; Sarukhanyan, Hakob; Akopian, David

2013-03-01

Cell phones and other mobile devices become part of human culture and change activity and lifestyle patterns. Mobile phone technology continuously evolves and incorporates more and more sensors for enabling advanced applications. Latest generations of smart phones incorporate GPS and WLAN location finding modules, vision cameras, microphones, accelerometers, temperature sensors etc. The availability of these sensors in mass-market communication devices creates exciting new opportunities for data mining applications. Particularly healthcare applications exploiting build-in sensors are very promising. This paper reviews different approaches of human activity recognition.

High-Temperature Resistance Strain Gauges

NASA Technical Reports Server (NTRS)

Lei, Jih-Fen

1994-01-01

Resistance strain gauges developed for use at high temperatures in demanding applications like testing aircraft engines and structures. Measures static strains at temperatures up to 800 degrees C. Small and highly reproducible. Readings corrected for temperature within small tolerances, provided temperatures measured simultaneously by thermocouples or other suitable devices. Connected in wheatstone bridge.

A YBCO RF-squid variable temperature susceptometer and its applications

NASA Technical Reports Server (NTRS)

Zhou, Luwei; Qiu, Jinwu; Zhang, Xianfeng; Tang, Zhimin; Cai, Yimin; Qian, Yongjia

1991-01-01

The Superconducting QUantum Interference Device (SQUID) susceptibility using a high-temperature radio-frequency (rf) SQUID and a normal metal pick-up coil is employed in testing weak magnetization of the sample. The magnetic moment resolution of the device is 1 x 10(exp -6) emu, and that of the susceptibility is 5 x 10(exp -6) emu/cu cm.

Wearable, Flexible, and Multifunctional Healthcare Device with an ISFET Chemical Sensor for Simultaneous Sweat pH and Skin Temperature Monitoring.

PubMed

Nakata, Shogo; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2017-03-24

Real-time daily healthcare monitoring may increase the chances of predicting and diagnosing diseases in their early stages which, currently, occurs most frequently during medical check-ups. Next-generation noninvasive healthcare devices, such as flexible multifunctional sensor sheets designed to be worn on skin, are considered to be highly suitable candidates for continuous real-time health monitoring. For healthcare applications, acquiring data on the chemical state of the body, alongside physical characteristics such as body temperature and activity, are extremely important for predicting and identifying potential health conditions. To record these data, in this study, we developed a wearable, flexible sweat chemical sensor sheet for pH measurement, consisting of an ion-sensitive field-effect transistor (ISFET) integrated with a flexible temperature sensor: we intend to use this device as the foundation of a fully integrated, wearable healthcare patch in the future. After characterizing the performance, mechanical flexibility, and stability of the sensor, real-time measurements of sweat pH and skin temperature are successfully conducted through skin contact. This flexible integrated device has the potential to be developed into a chemical sensor for sweat for applications in healthcare and sports.

Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions

NASA Astrophysics Data System (ADS)

Chavez, Ruben; Angst, Sebastian; Hall, Joseph; Maculewicz, Franziska; Stoetzel, Julia; Wiggers, Hartmut; Thanh Hung, Le; Van Nong, Ngo; Pryds, Nini; Span, Gerhard; Wolf, Dietrich E.; Schmechel, Roland; Schierning, Gabi

2018-01-01

In many industrial processes, a large proportion of energy is lost in the form of heat. Thermoelectric generators can convert this waste heat into electricity by means of the Seebeck effect. However, the use of thermoelectric generators in practical applications on an industrial scale is limited in part because electrical, thermal, and mechanical bonding contacts between the semiconductor materials and the metal electrodes in current designs are not capable of withstanding thermal-mechanical stress and alloying of the metal-semiconductor interface when exposed to the high temperatures occurring in many real-world applications. Here we demonstrate a concept for thermoelectric generators that can address this issue by replacing the metallization and electrode bonding on the hot side of the device by a p-n junction between the two semiconductor materials, making the device robust against temperature induced failure. In our proof-of-principle demonstration, a p-n junction device made from nanocrystalline silicon is at least comparable in its efficiency and power output to conventional devices of the same material and fabrication process, but with the advantage of sustaining high hot side temperatures and oxidative atmosphere.

40 CFR Table 4 to Subpart Xxxx of... - Operating Limits for Puncture Sealant Application Control Devices

Code of Federal Regulations, 2011 CFR

2011-07-01

... performance test. 2. Carbon adsorber (regenerative) to which puncture sealant application spray booth emissions are ducted a. Maintain the total regeneration mass, volumetric flow, and carbon bed temperature at the operating range established during the performance test.b. Reestablish the carbon bed temperature...

Articulating feedstock delivery device

DOEpatents

Jordan, Kevin

2013-11-05

A fully articulable feedstock delivery device that is designed to operate at pressure and temperature extremes. The device incorporates an articulating ball assembly which allows for more accurate delivery of the feedstock to a target location. The device is suitable for a variety of applications including, but not limited to, delivery of feedstock to a high-pressure reaction chamber or process zone.

Cu(In,Ga)Se2 solar cells with In2S3 buffer layer deposited by thermal evaporation

NASA Astrophysics Data System (ADS)

Kim, SeongYeon; Rana, Tanka R.; Kim, JunHo; Yun, JaeHo

2017-12-01

We report on physical vapor deposition of indium sulfide (In2S3) buffer layers and its application to Cu(In,Ga)Se2 (CIGSe) thin film solar cell. The Indium sulfide buffer layers were evaporated onto CIGSe at various substrate temperatures from room temperature (RT) to 350 °C. The effect of deposition temperature of buffer layers on the solar cell device performance were investigated by analyzing temperature dependent current-voltage ( J- V- T), external quantum efficiency (EQE) and Raman spectroscopy. The fabricated device showed the highest power conversion efficiency of 6.56% at substrate temperature of 250 °C, which is due to the decreased interface recombination. However, the roll-over in J- V curves was observed for solar cell device having buffer deposited at substrate temperature larger than 250 °C. From the measurement results, the interface defect and roll-over related degradation were found to have limitation on the performance of solar cell device.

Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.

2003-01-01

Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

Short protection device for stack of electrolytic cells

DOEpatents

Katz, M.; Schroll, C.R.

1984-11-29

The present invention relates to a device for preventing the electrical shorting of a stack of electrolytic cells during an extended period of operation. The device has application to fuel cell and other electrolytic cell stacks operating in low or high temperature corrosive environments. It is of particular importance for use in a stack of fuel cells operating with molten metal carbonate electrolyte for the production of electric power. Also, the device may have application in similar technology involving stacks of electrolytic cells for electrolysis to decompose chemical compounds.

Testing high brightness LEDs relative to application environment

NASA Astrophysics Data System (ADS)

Singer, Jeffrey; Mangum, Scott; Lundberg, John

2006-08-01

Application of light emitting diodes is expanding as the luminous output and efficiencies of these devices improve. At the same time, the number of LED package types is increasing, making it challenging to determine the appropriate device for use in lighting product designs. A range of factors should be considered when selecting a LED for an application including color coordinates, luminous efficacy, cost, lumen maintenance, application life, packaging and manufacturability. Additional complexities can be introduced as LED packages become obsolete and replacement parts must be selected. The replacement LED characteristics must be understood and assessed against the parameters of the original device, in order to determine if the change will be relatively simple or will force other end-product changes. While some characteristics are readily measured and compared, other factors, such as lumen maintenance, are difficult to verify. This paper will discuss the characteristics of a LED that should be considered during the design process as well as methods to validate these characteristics, particularly those which are not typically on data sheets or, are critical to the design and warrant additional validation. Particular attention will be given to LED lumen maintenance. While published manufacturer data typically provides temperature versus performance curves, the data may not be useful depending upon the application's operating environment. Models must be created to estimate the LED's junction temperature and degradation curve at the applied temperature in order to develop a more precise life estimate. This paper presents one approach to a LED device life and performance study designed with application environments in mind.

Electrical Switching of Perovskite Thin-Film Resistors

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Juan; Ignatiev, Alex

2010-01-01

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Liquid crystal materials and tunable devices for optical communications

NASA Astrophysics Data System (ADS)

Du, Fang

In this dissertation, liquid crystal materials and devices are investigated in meeting the challenges for photonics and communications applications. The first part deals with polymer-stabilized liquid crystal (PSLC) materials and devices. Three polymer-stabilized liquid crystal systems are developed for optical communications. The second part reports the experimental investigation of a novel liquid-crystal-infiltrated photonic crystal fiber (PCF) and explores its applications in fiber-optic communications. The curing temperature is found to have significant effects on the PSLC performance. The electro-optic properties of nematic polymer network liquid crystal (PNLC) at different curing temperatures are investigated experimentally. At high curing temperature, a high contrast, low drive voltage, and small hysteresis PNLC is obtained as a result of the formed large LC microdomains. With the help of curing temperature effect, it is able to develop PNLC based optical devices with highly desirable performances for optical communications. Such high performance is generally considered difficult to realize for a PNLC. In fact, the poor performance of PNLC, especially at long wavelengths, has hindered it from practical applications for optical communications for a long time. Therefore, the optimal curing temperature effect discovered in this thesis would enable PSLCs for practical industrial applications. Further more, high birefringence LCs play an important role for near infrared photonic devices. The isothiocyanato tolane liquid crystals exhibit a high birefringence and low viscosity. The high birefringence LC dramatically improves the PSLC contrast ratio while keeping a low drive voltage and fast response time. A free-space optical device by PNLC is experimentally demonstrated and its properties characterized. Most LC devices are polarization sensitive. To overcome this drawback, we have investigated the polymer-stabilized cholesteric LC (PSCLC). Combining the curing temperature effect and high birefringence LC, a polarization independent fiber-optical device is realized with over 30 dB attenuation, ˜12 V rms drive voltage and 11/28 milliseconds (rise/decay) response times. A polymer-stabilized twisted nematic LC (PS TNLC) is also proposed as a variable optical attenuator for optical communications. By using the polarization control system, the device is polarization independent. The polymer network in a PS TNLC not only results in a fast response time (0.9/9 milliseconds for rise/decay respectively), but also removes the backflow effect of TNLC which occurs in the high voltage regime. Another major achievement in this thesis is the first demonstration of an electrically tunable LC-infiltrated photonic crystal fiber (PCF). Two different LC PCF configurations are studied. For the first time, electrically tunable LC PCFs are demonstrated experimentally. The guiding mechanism and polarization properties are studied. Preliminary experimental results are also given for the thermo-optical properties of a LC filled air-core PCF. In conclusion, this dissertation has solved important issues related to PSLC and enables its applications as VOAs and light shutters in optical communications. Through experimental investigations of the LC filled PCFs, a new possibility of developing tunable micro-sized fiber devices is opened for optical communications as well.

Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles.

PubMed

Paik, Young Hun; Kojori, Hossein Shokri; Kim, Sung Jin

2016-02-19

We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe <100 nm of PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles

NASA Astrophysics Data System (ADS)

Paik, Young Hun; Shokri Kojori, Hossein; Kim, Sung Jin

2016-02-01

We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe <100 nm of PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

High-Tc superconducting materials for electric power applications.

PubMed

Larbalestier, D; Gurevich, A; Feldmann, D M; Polyanskii, A

2001-11-15

Large-scale superconducting electric devices for power industry depend critically on wires with high critical current densities at temperatures where cryogenic losses are tolerable. This restricts choice to two high-temperature cuprate superconductors, (Bi,Pb)2Sr2Ca2Cu3Ox and YBa2Cu3Ox, and possibly to MgB2, recently discovered to superconduct at 39 K. Crystal structure and material anisotropy place fundamental restrictions on their properties, especially in polycrystalline form. So far, power applications have followed a largely empirical, twin-track approach of conductor development and construction of prototype devices. The feasibility of superconducting power cables, magnetic energy-storage devices, transformers, fault current limiters and motors, largely using (Bi,Pb)2Sr2Ca2Cu3Ox conductor, is proven. Widespread applications now depend significantly on cost-effective resolution of fundamental materials and fabrication issues, which control the production of low-cost, high-performance conductors of these remarkable compounds.

Applications of piezoelectric materials in oilfield services.

PubMed

Goujon, Nicolas; Hori, Hiroshi; Liang, Kenneth K; Sinha, Bikash K

2012-09-01

Piezoelectric materials are used in many applications in the oilfield services industry. Four illustrative examples are given in this paper: marine seismic survey, precision pressure measurement, sonic logging-while-drilling, and ultrasonic bore-hole imaging. In marine seismics, piezoelectric hydrophones are deployed on a massive scale in a relatively benign environment. Hence, unit cost and device reliability are major considerations. The remaining three applications take place downhole in a characteristically harsh environment with high temperature and high pressure among other factors. The number of piezoelectric devices involved is generally small but otherwise highly valued. The selection of piezoelectric materials is limited, and the devices have to be engineered to withstand the operating conditions. With the global demand for energy increasing in the foreseeable future, the search for hydrocarbon resources is reaching into deeper and hotter wells. There is, therefore, a continuing and pressing need for high-temperature and high-coupling piezoelectric materials.

US Navy superconductivity program

NASA Technical Reports Server (NTRS)

Gubser, Donald U.

1991-01-01

Both the new high temperature superconductors (HTS) and the low temperature superconductors (LTS) are important components of the Navy's total plan to integrate superconductivity into field operational systems. Fundamental research is an important component of the total Navy program and focuses on the HTS materials. Power applications (ship propulsion) use LTS materials while space applications (millimeter wave electronics) use HTS materials. The Space Experiment to be conducted at NRL will involve space flight testing of HTS devices built by industry and will demonstrate the ability to engineer and space qualify these devices for systems use. Another important component of the Navy's effort is the development of Superconducting Quantum Interference Device (SQUID) magnetometers. This program will use LTS materials initially, but plans to implement HTS materials as soon as possible. Hybrid HTS/LTS systems are probable in many applications. A review of the status of the Navy's HTS materials research is given as well as an update on the Navy's development efforts in superconductivity.

Rapid thermal responsive conductive hybrid cryogels with shape memory properties, photothermal properties and pressure dependent conductivity.

PubMed

Deng, Zexing; Guo, Yi; Ma, Peter X; Guo, Baolin

2018-09-15

Stimuli responsive cryogels with multi-functionality have potential application for electrical devices, actuators, sensors and biomedical devices. However, conventional thermal sensitive poly(N-isopropylacrylamide) cryogels show slow temperature response speed and lack of multi-functionality, which greatly limit their practical application. Herein we present conductive fast (2 min for both deswelling and reswelling behavior) thermally responsive poly(N-isopropylacrylamide) cryogels with rapid shape memory properties (3 s for shape recovery), near-infrared (NIR) light sensitivity and pressure dependent conductivity, and further demonstrated their applications as temperature sensitive on-off switch, NIR light sensitive on-off switch, water triggered shape memory on-off switch and pressure dependent device. These cryogels were first prepared in dimethyl sulfoxide below its melting temperature in ice bath and subsequently put into aniline or pyrrole solution to in situ deposition of conducting polyaniline or polypyrrole nanoparticles. The continuous macroporous sponge-like structure provides cryogels with rapid responsivity both in deswelling, reswelling kinetics and good elasticity. After incorporating electrically conductive polyaniline or polypyrrole nanoaggregates, the hybrid cryogels exhibit desirable conductivity, photothermal property, pressure dependent conductivity and good cytocompatibility. These multifunctional hybrid cryogels make them great potential as stimuli responsive electrical device, tissue engineering scaffolds, drug delivery vehicle and electronic skin. Copyright © 2018 Elsevier Inc. All rights reserved.

Low-temperature-processed efficient semi-transparent planar perovskite solar cells for bifacial and tandem applications

PubMed Central

Fu, Fan; Feurer, Thomas; Jäger, Timo; Avancini, Enrico; Bissig, Benjamin; Yoon, Songhak; Buecheler, Stephan; Tiwari, Ayodhya N.

2015-01-01

Semi-transparent perovskite solar cells are highly attractive for a wide range of applications, such as bifacial and tandem solar cells; however, the power conversion efficiency of semi-transparent devices still lags behind due to missing suitable transparent rear electrode or deposition process. Here we report a low-temperature process for efficient semi-transparent planar perovskite solar cells. A hybrid thermal evaporation–spin coating technique is developed to allow the introduction of PCBM in regular device configuration, which facilitates the growth of high-quality absorber, resulting in hysteresis-free devices. We employ high-mobility hydrogenated indium oxide as transparent rear electrode by room-temperature radio-frequency magnetron sputtering, yielding a semi-transparent solar cell with steady-state efficiency of 14.2% along with 72% average transmittance in the near-infrared region. With such semi-transparent devices, we show a substantial power enhancement when operating as bifacial solar cell, and in combination with low-bandgap copper indium gallium diselenide we further demonstrate 20.5% efficiency in four-terminal tandem configuration. PMID:26576667

Low-temperature-processed efficient semi-transparent planar perovskite solar cells for bifacial and tandem applications.

PubMed

Fu, Fan; Feurer, Thomas; Jäger, Timo; Avancini, Enrico; Bissig, Benjamin; Yoon, Songhak; Buecheler, Stephan; Tiwari, Ayodhya N

2015-11-18

Semi-transparent perovskite solar cells are highly attractive for a wide range of applications, such as bifacial and tandem solar cells; however, the power conversion efficiency of semi-transparent devices still lags behind due to missing suitable transparent rear electrode or deposition process. Here we report a low-temperature process for efficient semi-transparent planar perovskite solar cells. A hybrid thermal evaporation-spin coating technique is developed to allow the introduction of PCBM in regular device configuration, which facilitates the growth of high-quality absorber, resulting in hysteresis-free devices. We employ high-mobility hydrogenated indium oxide as transparent rear electrode by room-temperature radio-frequency magnetron sputtering, yielding a semi-transparent solar cell with steady-state efficiency of 14.2% along with 72% average transmittance in the near-infrared region. With such semi-transparent devices, we show a substantial power enhancement when operating as bifacial solar cell, and in combination with low-bandgap copper indium gallium diselenide we further demonstrate 20.5% efficiency in four-terminal tandem configuration.

Extreme High and Low Temperature Operation of the Silicon-On-Insulator Type CHT-OPA Operational Amplifier

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

A new operational amplifier chip based on silicon-on-insulator technology was evaluated for potential use in extreme temperature environments. The CHT-OPA device is a low power, precision operational amplifier with rail-to-rail output swing capability, and it is rated for operation between -55 C and +225 C. A unity gain inverting circuit was constructed utilizing the CHT-OPA chip and a few passive components. The circuit was evaluated in the temperature range from -190 C to +200 C in terms of signal gain and phase shift, and supply current. The investigations were carried out to determine suitability of this device for use in space exploration missions and aeronautic applications under wide temperature incursion. Re-restart capability at extreme temperatures, i.e. power switched on while the device was soaked at extreme temperatures, was also investigated. In addition, the effects of thermal cycling under a wide temperature range on the operation of this high performance amplifier were determined. The results from this work indicate that this silicon-on-insulator amplifier chip maintained very good operation between +200 C and -190 C. The limited thermal cycling had no effect on the performance of the amplifier, and it was able to re-start at both -190 C and +200 C. In addition, no physical degradation or packaging damage was introduced due to either extreme temperature exposure or thermal cycling. The good performance demonstrated by this silicon-on-insulator operational amplifier renders it a potential candidate for use in space exploration missions or other environments under extreme temperatures. Additional and more comprehensive characterization is, however, required to establish the reliability and suitability of such devices for long term use in extreme temperature applications.

Thermal Peak Management Using Organic Phase Change Materials for Latent Heat Storage in Electronic Applications

PubMed Central

Maxa, Jacob; Novikov, Andrej; Nowottnick, Mathias

2017-01-01

Modern high power electronics devices consists of a large amount of integrated circuits for switching and supply applications. Beside the benefits, the technology exhibits the problem of an ever increasing power density. Nowadays, heat sinks that are directly mounted on a device, are used to reduce the on-chip temperature and dissipate the thermal energy to the environment. This paper presents a concept of a composite coating for electronic components on printed circuit boards or electronic assemblies that is able to buffer a certain amount of thermal energy, dissipated from a device. The idea is to suppress temperature peaks in electronic components during load peaks or electronic shorts, which otherwise could damage or destroy the device, by using a phase change material to buffer the thermal energy. The phase change material coating could be directly applied on the chip package or the PCB using different mechanical retaining jigs.

Thin-film thermoelectric devices with high room-temperature figures of merit.

PubMed

Venkatasubramanian, R; Siivola, E; Colpitts, T; O'Quinn, B

2001-10-11

Thermoelectric materials are of interest for applications as heat pumps and power generators. The performance of thermoelectric devices is quantified by a figure of merit, ZT, where Z is a measure of a material's thermoelectric properties and T is the absolute temperature. A material with a figure of merit of around unity was first reported over four decades ago, but since then-despite investigation of various approaches-there has been only modest progress in finding materials with enhanced ZT values at room temperature. Here we report thin-film thermoelectric materials that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys. This amounts to a maximum observed factor of approximately 2.4 for our p-type Bi2Te3/Sb2Te3 superlattice devices. The enhancement is achieved by controlling the transport of phonons and electrons in the superlattices. Preliminary devices exhibit significant cooling (32 K at around room temperature) and the potential to pump a heat flux of up to 700 W cm-2; the localized cooling and heating occurs some 23,000 times faster than in bulk devices. We anticipate that the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications: for example, in thermochemistry-on-a-chip, DNA microarrays, fibre-optic switches and microelectrothermal systems.

Demonstration of efficient spin injection and detection in various systems using Fe{sub 3}O{sub 4} based spin injectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhat, Shwetha G., E-mail: shwethabhat@physics.iisc.ernet.in; Anil Kumar, P. S.

2016-05-15

Half-metal based spin injector devices for spin injection and detection application have proven to be efficient owing to their enhanced injection and detection efficiency. In this study, we extend the all-electrical spin injection and detection studies into different systems like Si and GaAs using half-metal Fe{sub 3}O{sub 4} as a spin injector in the presence and absence of tunnel barrier MgO. Injection into GaAs is verified using conventional Fe/MgO/GaAs devices. Room temperature spin injection into both p-type and n-type Si is achieved and the spin injection could be observed down to 100 K. Obtained spin relaxation time for these n-typemore » and p-type Si at different temperatures agree well with the existing reports. Further, the temperature dependent spin injection and detection is also successfully achieved in Fe{sub 3}O{sub 4}/GaAs (n-type) Schottky devices, and a comparison study of the results with control experiment using Fe/MgO/GaAs (n-type) devices confirm the relaxation to be similar in the GaAs substrate, as expected. Hence, even Fe{sub 3}O{sub 4} material can be effectively used as an efficient spin injector as well as detector, making it an attractive candidate for the room temperature spintronics device applications.« less

Physics of Information Assurance

DTIC Science & Technology

the United States Patent and Trademark Office on April 14, 2016. HfO memristor devices were measured over a range of temperatures up to 250C. They showed stability in performance at these elevated temperatures....Free Space Optical Data Transmission for Secure Computing patent application has a provisional application serial number 62/322,391 and was filed in

Cooling device featuring thermoelectric and diamond materials for temperature control of heat-dissipating devices

NASA Technical Reports Server (NTRS)

Vandersande, Ian W. (Inventor); Ewell, Richard (Inventor); Fleurial, Jean-Pierre (Inventor); Lyon, Hylan B. (Inventor)

1998-01-01

A cooling device for lowering the temperature of a heat-dissipating device. The cooling device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with the heat-dissipating device. During operation, heat flows from the heat-dissipating device into the heat-conducting substrate, where it is spread out over a relatively large area. A thermoelectric cooling material (e.g., a Bi.sub.2 Te.sub.3 -based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. Application of electrical power to the thermoelectric material drives the thermoelectric material to pump heat into a second heat-conducting substrate which, in turn, is attached to a heat sink.

Dynamic Angular Control Of Thermal Therapy With Stationary Multi-Sectored Tubular Ultrasound Applicators Under MR Temperature Monitoring

NASA Astrophysics Data System (ADS)

Kinsey, Adam M.; Diederich, Chris J.; Nau, William H.; Ross, Anthony B.; Butts Pauly, Kim; Rieke, Viola; Sommer, Graham

2006-05-01

Multi-sectored ultrasound heating applicators with dynamic angular and longitudinal control of heating profiles are being investigated for the thermal treatment of tumors in sites such as prostate, uterus, and brain. Multi-sectored tubular ultrasound transducers with independent sector power control were incorporated into interstitial and transurethral applicators and provided dynamic angular control of a heating pattern without requiring device manipulation during treatment. Acoustic beam measurements of each applicator type demonstrated a 35-40° acoustic dead zone between each independent sector, with negligible mechanical or electrical coupling. Despite the acoustic dead zone between sectors, simulations and experiments under MR temperature (MRT) monitoring showed that the variance from the maximum lesion radius (scalloping) with all elements activated on a transducer was minimal and did not affect conformal heating of a target area. A biothermal model with a multi-point controller was used to adjust the applied power and treatment time of individual transducer segments as the tissue temperature changed in simulations of thermal lesions with both interstitial and transurethral applicators. Transurethral ultrasound applicators for benign prostatic hyperplasia (BPH) treatment with either three or four sectors conformed a thermal dose to a simulated target area in the angular and radial dimensions. The simulated treatment was controlled to a maximum temperature of 85°C, and had a maximum duration of 5 min when power was turned off as the 52°C temperature contour reach a predetermined control point for each sector in the tissue. Experiments conducted with multi-sectored applicators under MRT monitoring showed thermal ablation and hyperthermia treatments had little or no border `scalloping', conformed to a pretreatment target area, and correlated very well with the simulated thermal lesions. The radial penetration of the heat treatments in tissue with interstitial (1.5-1.8 mm OD transducer) and transurethral (2.5-4.0 mm OD transducer) applicators was at least 1.5 cm and 2.0 cm, respectively, for a treatment duration of 10 min. Angular control of thermal ablation and hyperthermia therapy often relies upon non-adjustable angular power deposition patterns and/or mechanical manipulation of the heating device. The multi-sectored ultrasound applicators developed in this study provide dynamic control of the angular heating distribution during treatment without device manipulation and maintain previously reported heating penetration and spatial control characteristics of similar ultrasound devices.

Space applications for high temperature superconductivity - Brief review

NASA Technical Reports Server (NTRS)

Krishen, Kumar

1990-01-01

An overview is presented of materials and devices based on high-temperature superconductivity (HTS) that could have useful space-oriented applications. Of specific interest are applications of HTS technologies to mm and microwave systems, spaceborne and planet-surface sensors, and to magnetic subsystems for robotic, rescue, and docking maneuvers. HTS technologies can be used in optoelectronics, magnetic-field detectors, antennae, transmission/delay lines, and launch/payload coils.

Temperature-gated thermal rectifier for active heat flow control.

PubMed

Zhu, Jia; Hippalgaonkar, Kedar; Shen, Sheng; Wang, Kevin; Abate, Yohannes; Lee, Sangwook; Wu, Junqiao; Yin, Xiaobo; Majumdar, Arun; Zhang, Xiang

2014-08-13

Active heat flow control is essential for broad applications of heating, cooling, and energy conversion. Like electronic devices developed for the control of electric power, it is very desirable to develop advanced all-thermal solid-state devices that actively control heat flow without consuming other forms of energy. Here we demonstrate temperature-gated thermal rectification using vanadium dioxide beams in which the environmental temperature actively modulates asymmetric heat flow. In this three terminal device, there are two switchable states, which can be regulated by global heating. In the "Rectifier" state, we observe up to 28% thermal rectification. In the "Resistor" state, the thermal rectification is significantly suppressed (<1%). To the best of our knowledge, this is the first demonstration of solid-state active-thermal devices with a large rectification in the Rectifier state. This temperature-gated rectifier can have substantial implications ranging from autonomous thermal management of heating and cooling systems to efficient thermal energy conversion and storage.

Thermodynamic limits to the conversion of blackbody radiation by quantum systems. [with application to solar energy conversion devices

NASA Technical Reports Server (NTRS)

Buoncristiani, A. M.; Smith, B. T.; Byvik, C. E.

1982-01-01

Using general thermodynamic arguments, we analyze the conversion of the energy contained in the radiation from a blackbody to useful work by a quantum system. We show that the energy available for conversion is bounded above by the change in free energy in the incident and reradiated fields and that this free energy change depends upon the temperature of the receiving device. Universal efficiency curves giving the ultimate thermodynamic conversion efficiency of the quantum system are presented in terms of the blackbody temperature and the temperature and threshold energy of the quantum system. Application of these results is made to a variety of systems including biological photosynthetic, photovoltaic, and photoelectrochemical systems.

Spray Chemical Vapor Deposition of CulnS2 Thin Films for Application in Solar Cell Devices

NASA Technical Reports Server (NTRS)

Hollingsworth, Jennifer A.; Buhro, William E.; Hepp, Aloysius F.; Jenkins. Philip P.; Stan, Mark A.

1998-01-01

Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300-400 C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 C. At even higher temperatures (500 C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

Assessment of SOI Devices and Circuits at Extreme Temperatures

NASA Technical Reports Server (NTRS)

Elbuluk, Malik; Hammoud, Ahmad; Patterson, Richard L.

2007-01-01

Electronics designed for use in future NASA space exploration missions are expected to encounter extreme temperatures and wide thermal swings. Such missions include planetary surface exploration, bases, rovers, landers, orbiters, and satellites. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of mission. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical devices, circuits, and systems suitable for applications in deep space exploration missions and aerospace environment. Silicon-On-Insulator (SOI) technology has been under active consideration in the electronics industry for many years due to the advantages that it can provide in integrated circuit (IC) chips and computer processors. Faster switching, less power, radiationtolerance, reduced leakage, and high temp-erature capability are some of the benefits that are offered by using SOI-based devices. A few SOI circuits are available commercially. However, there is a noticeable interest in SOI technology for different applications. Very little data, however, exist on the performance of such circuits under cryogenic temperatures. In this work, the performance of SOI integrated circuits, evaluated under low temperature and thermal cycling, are reported. In particular, three examples of SOI circuits that have been tested for operation at low at temperatures are given. These circuits are SOI operational amplifiers, timers and power MOSFET drivers. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these circuits for use in space exploration missions at cryogenic temperatures. The findings are useful to mission planners and circuit designers so that proper selection of electronic parts can be made, and risk assessment can be established for such circuits for use in space missions.

Miniature reaction chamber and devices incorporating same

DOEpatents

Mathies, Richard A.; Woolley, Adam T.

2000-10-17

The present invention generally relates to miniaturized devices for carrying out and controlling chemical reactions and analyses. In particular, the present invention provides devices which have miniature temperature controlled reaction chambers for carrying out a variety of synthetic and diagnostic applications, such as PCR amplification, nucleic acid hybridization, chemical labeling, nucleic acid fragmentation and the like.

Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

NASA Astrophysics Data System (ADS)

Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Artola, L.; Sahu, P. K.

2016-09-01

In this paper, a novel N-channel Tunnel Field Effect Transistor (TFET) i.e., Trigate Silicon-ON-Insulator (SOI) N-TFET with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (IOFF) by keeping in mind the sensitivity towards temperature. The proposed model can achieve a Sub-threshold swing less than 35 mV/decade at various temperatures, which is desirable for designing low power CTFET for digital circuit applications. In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region. High-k Spacer i.e., HfO2 is used to enhance the device performance and also it avoids overlapping of transistors in an integrated circuits (IC's). We have designed a reliable device by performing the temperature analysis on Transfer characteristics, Drain characteristics and also on various performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF, Trans-conductance (gm), Trans-conductance Generation Factor (TGF), Sub-threshold Swing (SS) to observe the applications towards harsh temperature environment.

Targeted Prostate Thermal Therapy with Catheter-Based Ultrasound Devices and MR Thermal Monitoring

NASA Astrophysics Data System (ADS)

Diederich, Chris; Ross, Anthony; Kinsey, Adam; Nau, Will H.; Rieke, Viola; Butts Pauly, Kim; Sommer, Graham

2006-05-01

Catheter-based ultrasound devices have significant advantages for thermal therapy procedures, including potential for precise spatial and dynamic control of heating patterns to conform to targeted volumes. Interstitial and transurethral ultrasound applicators, with associated treatment strategies, were developed for thermal ablation of prostate combined with MR thermal monitoring. Four types of multielement transurethral applicators were devised, each with different levels of selectivity and intended therapeutic goals: sectored tubular transducer devices with fixed directional heating patterns; planar and lightly focused curvilinear devices with narrow heating patterns; and multi-sectored tubular devices capable of dynamic angular control without applicator movement. These devices are integrated with a 4 mm delivery catheter, incorporate an inflatable cooling balloon (10 mm OD) for positioning within the prostate and capable of rotation via an MR-compatible motor. Similarly, interstitial devices (2.4 mm OD) have been developed for percutaneous implantation with fixed directional heating patterns (e.g., 180 deg.). In vivo experiments in canine prostate (n=15) under MR temperature imaging were used to evaluate the heating technology and develop treatment strategies. MR thermal imaging in a 0.5 T interventional MRI was used to monitor temperature contours and thermal dose in multiple slices through the target volume. Sectored transurethral devices produce directional coagulation zones, extending 15-20 mm radial distance to the outer prostate capsule. The curvilinear applicator produces distinct 2-3 mm wide lesions, and with sequential rotation and modulated dwell time can precisely conform thermal ablation to selected areas or the entire prostate gland. Multi-sectored transurethral applicators can dynamically control the angular heating profile and target large regions of the gland in short treatment times without applicator manipulation. Interstitial implants with directional devices can be used to effectively ablate the posterior peripheral zone of the gland while protecting the rectum. An implant with multi-sectored interstitial devices can effectively control the angular heating pattern without applicator rotation. The MR derived 52 °C and lethal thermal dose contours (t43=240 min) allowed for real-time control of the applicators and effectively defined the extent of thermal damage. Catheter-based ultrasound devices, combined with MR thermal monitoring, can produce relatively fast and precise thermal ablation of prostate, with potential for treatment of cancer or BPH.

Advances in crystal growth, device fabrication and characterization of thallium bromide detectors for room temperature applications

NASA Astrophysics Data System (ADS)

Datta, Amlan; Moed, Demi; Becla, Piotr; Overholt, Matthew; Motakef, Shariar

2016-10-01

Thallium bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. However, several critical issues need to be addressed before deployment of this material for long-term field applications can be realized. In this paper, progress made towards solving some of these challenges is discussed. The most significant factors for achieving long-term performance stability for TlBr devices include residual stress as generated during crystal growth and fabrication processes, surface conditions, and the choice of contact metal. Modifications to the commonly used traveling molten zone growth technique for TlBr crystals can significantly minimize the stresses generated by large temperature gradients near the melt-solid interface of the growing crystal. Plasma processing techniques were introduced for the first time to modify the Br-etched TlBr surfaces, which resulted in improvements to the surface conditions, and consequently the spectroscopic response of the detectors. Palladium electrodes resulted a 20-fold improvement in the room-temperature device lifetime when compared to its Br-etched Pt counterpart.

Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Pellegrini, G.; Godignon, P.; Quirion, D.; Hidalgo, S.; Matilla, O.; Fontserè, A.; Molas, B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Pothin, D.; Fajardo, P.

2018-01-01

Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines, as well as other astronomy and space applications. Owing to their lower susceptibility to variable temperature and illumination conditions, there is also special interest in silicon carbide devices for some of these applications. Moreover, radiation hardness of the involved technologies is a major concern for high-energy physics and space applications. This work presents four-quadrant photodiodes produced on ultrathin (10 μm) and bulk Si, as well as on SiC epilayer substrates. An extensive electrical characterization has been carried out by using current-voltage (I-V) and capacitance-voltage (C-V) techniques. The impact of different temperature (from -50oC to 175oC) and visible light conditions on the electrical characteristics of the devices has been evaluated. Radiation effects caused by 2 MeV electron irradiation up to 1×1014, 1×1015 and 1×1016 e/cm2 fluences have been studied. Special attention has been devoted to the study of charge build-up in diode interquadrant isolation, as well as its impact on interquadrant resistance. The study of these electrical properties and its radiation-induced degradation should be taken into account for device applications.

Image plane detector spectrophotometer - Application to O2 atmospheric band nightglow

NASA Technical Reports Server (NTRS)

Luo, Mingzhao; Yee, Jeng-Hwa; Hays, Paul B.

1988-01-01

A new variety of low resolution spectrometer is described. This device, an image plane detector spectrophotometer, has high sensitivity and modest resolution sufficient to determine the rotational temperature and brightness of molecular band emissions. It uses an interference filter as a dispersive element and a multichannel image plane detector as the photon collecting device. The data analysis technqiue used to recover the temperature of the emitter and the emission brightness is presented. The atmospheric band of molecular oxygen is used to illustrate the use of the device.

Microwave signal-processing applications of HTS films

NASA Astrophysics Data System (ADS)

Adam, J. D.; Wagner, G. R.

1990-01-01

The low surface resistance (Rs) of high-temperature superconductors (HTS) will lead to the development of passive microwave devices for application in radar, electronic warfare, and satellite systems with performance significantly better than achieved with normal conductors. In particular, delay line based devices such as phase shifters, convolvers, and correlators will have low lossses and multi-GHz bandwidths. Low-loss filters which presently occupy cubic feet in waveguide will be fabricated in compact microstrip or stripline, and ultra-high Q resonators which currently require liquid helium refrigeration will be operated at around 77 K. Measurement of Rs of HTS is important both for device design and for optimization of the film growth process. Several approaches have been developed which provide data over a wide range of frequency and temperature, including stripline, cacity, and dielectric resonator techniques. HTS films for microwave applications should have at least Rs(HTS(

Ultra-miniature wireless temperature sensor for thermal medicine applications.

PubMed

Khairi, Ahmad; Hung, Shih-Chang; Paramesh, Jeyanandh; Fedder, Gary; Rabin, Yoed

2011-01-01

This study presents a prototype design of an ultra-miniature, wireless, battery-less, and implantable temperature-sensor, with applications to thermal medicine such as cryosurgery, hyperthermia, and thermal ablation. The design aims at a sensory device smaller than 1.5 mm in diameter and 3 mm in length, to enable minimally invasive deployment through a hypodermic needle. While the new device may be used for local temperature monitoring, simultaneous data collection from an array of such sensors can be used to reconstruct the 3D temperature field in the treated area, offering a unique capability in thermal medicine. The new sensory device consists of three major subsystems: a temperature-sensing core, a wireless data-communication unit, and a wireless power reception and management unit. Power is delivered wirelessly to the implant from an external source using an inductive link. To meet size requirements while enhancing reliability and minimizing cost, the implant is fully integrated in a regular foundry CMOS technology (0.15 μm in the current study), including the implant-side inductor of the power link. A temperature-sensing core that consists of a proportional-to-absolute-temperature (PTAT) circuit has been designed and characterized. It employs a microwatt chopper stabilized op-amp and dynamic element-matched current sources to achieve high absolute accuracy. A second order sigma-delta (Σ-Δ) analog-to-digital converter (ADC) is designed to convert the temperature reading to a digital code, which is transmitted by backscatter through the same antenna used for receiving power. A high-efficiency multi-stage differential CMOS rectifier has been designed to provide a DC supply to the sensing and communication subsystems. This paper focuses on the development of the all-CMOS temperature sensing core circuitry part of the device, and briefly reviews the wireless power delivery and communication subsystems.

Optical silicones for use in harsh operating environments

NASA Astrophysics Data System (ADS)

Riegler, Bill; Bruner, Stephen J.; Elgin, Randall

2004-12-01

The optics industry widely uses silcones for various fiber optic cable potting applications and light emitting diode protection. Optics manufacturers know traditional silicone elastomers, gels, thixotropic gels, and fluids not only perform extremely well in high temperature applications, but also offer refractive index matching so that silicones can transmit light with admirable efficiency. However, because environmental conditions may affect a material's performance over time, one must also consider the conditions the device operates in to ensure long-term reliability. External environments may include exposure to a combination of UV light and temperature, while other environments may expose devices to hydrocarbon based fuels. This paper will delve into the chemistry of silicones and functional groups that lend themselves to properties such as temperature, fuel, and radiation resistance to show shy silicone is the material of choice for optic applications under normally harmful forms of exposure. Data will be presented to examine silicone's performance in these environment.

Method to monitor HC-SCR catalyst NOx reduction performance for lean exhaust applications

DOEpatents

Viola, Michael B [Macomb Township, MI; Schmieg, Steven J [Troy, MI; Sloane, Thompson M [Oxford, MI; Hilden, David L [Shelby Township, MI; Mulawa, Patricia A [Clinton Township, MI; Lee, Jong H [Rochester Hills, MI; Cheng, Shi-Wai S [Troy, MI

2012-05-29

A method for initiating a regeneration mode in selective catalytic reduction device utilizing hydrocarbons as a reductant includes monitoring a temperature within the aftertreatment system, monitoring a fuel dosing rate to the selective catalytic reduction device, monitoring an initial conversion efficiency, selecting a determined equation to estimate changes in a conversion efficiency of the selective catalytic reduction device based upon the monitored temperature and the monitored fuel dosing rate, estimating changes in the conversion efficiency based upon the determined equation and the initial conversion efficiency, and initiating a regeneration mode for the selective catalytic reduction device based upon the estimated changes in conversion efficiency.

Silicon Carbide Solar Cells Investigated

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.

2001-01-01

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Chemical Fracturing of Refractory-Metal Vessels

NASA Technical Reports Server (NTRS)

Campana, R. J.

1986-01-01

Localized reactions cause refractory-metal vessels to break up at predetermined temperatures. Device following concept designed to break up along predetermined lines into smaller pieces at temperature significantly below melting point of metal from which made. Possible applications include fire extinguishers that breakup to release extinguishing gas in enclosed areas, pressure vessels that could otherwise burst dangerously in fire, and self-destroying devices. Technique particularly suitable modification to already existing structures.

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure

NASA Astrophysics Data System (ADS)

Jang, Jisu; Son, Myungwoo; Chung, Sunki; Kim, Kihyeun; Cho, Chunhum; Lee, Byoung Hun; Ham, Moon-Ho

2015-12-01

There is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100-300 °C at ambient pressure. In this method, we extended the graphene growth step in the absence of residual oxidizing species by introducing pumping and purging cycles prior to growth. This led to continuous monolayer graphene films with full surface coverage and excellent quality, which were comparable to those achieved with high-temperature CVD; for example, the surface coverage, transmittance, and carrier mobilities of the graphene grown at 300 °C were 100%, 97.6%, and 1,900-2,500 cm2 V-1 s-1, respectively. In addition, the growth temperature was substantially reduced to as low as 100 °C, which is the lowest temperature reported to date for pristine graphene produced by CVD. Our modified CVD method is expected to allow the direct growth of graphene in device manufacturing processes for practical applications while keeping underlying devices intact.

Emerging applications of high temperature superconductors for space communications

NASA Technical Reports Server (NTRS)

Heinen, Vernon O.; Bhasin, Kul B.; Long, Kenwyn J.

1990-01-01

Proposed space missions require longevity of communications system components, high input power levels, and high speed digital logic devices. The complexity of these missions calls for a high data bandwidth capacity. Incorporation of high temperature superconducting (HTS) thin films into some of these communications system components may provide a means of meeting these requirements. Space applications of superconducting technology has previously been limited by the requirement of cooling to near liquid helium temperatures. Development of HTS materials with transition temperatures above 77 K along with the natural cooling ability of space suggest that space applications may lead the way in the applications of high temperature superconductivity. In order for HTS materials to be incorporated into microwave and millimeter wave devices, the material properties such as electrical conductivity, current density, surface resistivity and others as a function of temperature and frequency must be well characterized and understood. The millimeter wave conductivity and surface resistivity were well characterized, and at 77 K are better than copper. Basic microwave circuits such as ring resonators were used to determine transmission line losses. Higher Q values than those of gold resonator circuits were observed below the transition temperature. Several key HTS circuits including filters, oscillators, phase shifters and phased array antenna feeds are feasible in the near future. For technology to improve further, good quality, large area films must be reproducibly grown on low dielectric constant, low loss microwave substrates.

Annealing temperature effect on electrical properties of MEH-PPV thin film via spin coating method

NASA Astrophysics Data System (ADS)

Azhar, N. E. A.; Shariffudin, S. S.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

Organic semiconductor has been discovered in different application devices such as organic light emitting diodes (OLEDs). Poly [2-methoxy-5(2' -ethylhexyloxy)-1, 4-phenylenevinylene), MEH-PPV widely used in this device because its ability to produce a good optical quality films. The MEH-PPV was prepared on glass substrate by spin coating method. The thin film was investigated at different annealing temperatures. The scanning electron micrographs (SEM) revealed that sample annealed at 50°C showed uniformity and less aggregation on morphology polymer thin film. Optical properties showed the intensities of visible emission increased as temperatures increased. The current-voltage (I-V) measurement revealed that the temperature of 50°C showed high conductive and it is suitable for optoelectronic device.

Temporal and spatial temperature measurement in insulator-based dielectrophoretic devices.

PubMed

Nakano, Asuka; Luo, Jinghui; Ros, Alexandra

2014-07-01

Insulator-based dielectrophoresis is a relatively new analytical technique with a large potential for a number of applications, such as sorting, separation, purification, fractionation, and preconcentration. The application of insulator-based dielectrophoresis (iDEP) for biological samples, however, requires the precise control of the microenvironment with temporal and spatial resolution. Temperature variations during an iDEP experiment are a critical aspect in iDEP since Joule heating could lead to various detrimental effects hampering reproducibility. Additionally, Joule heating can potentially induce thermal flow and more importantly can degrade biomolecules and other biological species. Here, we investigate temperature variations in iDEP devices experimentally employing the thermosensitive dye Rhodamin B (RhB) and compare the measured results with numerical simulations. We performed the temperature measurement experiments at a relevant buffer conductivity range commonly used for iDEP applications under applied electric potentials. To this aim, we employed an in-channel measurement method and an alternative method employing a thin film located slightly below the iDEP channel. We found that the temperature does not deviate significantly from room temperature at 100 μS/cm up to 3000 V applied such as in protein iDEP experiments. At a conductivity of 300 μS/cm, such as previously used for mitochondria iDEP experiments at 3000 V, the temperature never exceeds 34 °C. This observation suggests that temperature effects for iDEP of proteins and mitochondria under these conditions are marginal. However, at larger conductivities (1 mS/cm) and only at 3000 V applied, temperature increases were significant, reaching a regime in which degradation is likely to occur. Moreover, the thin layer method resulted in lower temperature enhancement which was also confirmed with numerical simulations. We thus conclude that the thin film method is preferable providing closer agreement with numerical simulations and further since it does not depend on the iDEP channel material. Overall, our study provides a thorough comparison of two experimental techniques for direct temperature measurement, which can be adapted to a variety of iDEP applications in the future. The good agreement between simulation and experiment will also allow one to assess temperature variations for iDEP devices prior to experiments.

Flexible microfluidic devices with three-dimensional interconnected microporous walls for gas and liquid applications.

PubMed

Yuen, Po Ki; DeRosa, Michael E

2011-10-07

This article presents a simple, low-cost method of fabrication and the applications of flexible polystyrene microfluidic devices with three-dimensional (3D) interconnected microporous walls based on treatment using a solvent/non-solvent mixture at room temperature. The complete fabrication process from device design concept to working device can be completed in less than an hour in a regular laboratory setting, without the need for expensive equipment. Microfluidic devices were used to demonstrate gas generation and absorption reactions by acidifying water with carbon dioxide (CO(2)) gas. By selectively treating the microporous structures with oxygen plasma, acidification of water by acetic acid (distilled white vinegar) perfusion was also demonstrated with the same device design.

850-nm implanted and oxide VCSELs in multigigabit data communication application

NASA Astrophysics Data System (ADS)

Pan, Jin-Shan; Lin, Yung-Sen; Li, Chao-Fang A.; Lai, Horng-Ching; Wu, Chang-Cherng; Huang, Kai-Feng

2001-10-01

In this paper, we will present the results of the 850nm implanted and oxide-confined vertical cavity surface emitting lasers in multi-Gigabit application. In TrueLight, we have a lot of experience in manufacturing VCSEL with ion-implantation and wet-oxidation technologies for single device Gigabit data transmission application. The ion-implanted VCSEL is reliable with the Mean Time To Failure (MTTF) up to 108 hours at room temperature operation. For the gigabit Ethernet data communication, it provides a very promising solution in short haul application. In transmission experiment we demonstrated the devices could be modulated up to 2.5Gbps and 3.2Gbps data rate. For oxide-confined VCSEL devices, we use wet oxidation technology to approach the device processing and get very good result to achieve the mutli-gigabit data communication application in single device form. The VCSEL device with oxide aperture around 12um could be modulated up to 2.5Gbps and 3.2Gbps. A data of employing VCSEL in high data rate POF transmission is also presented.

The study of colloidal lead bromide perovskite nanocrystals and its application in hybrid solar cells

NASA Astrophysics Data System (ADS)

Usman, Khurram; Ming, Shuaiqiang; Liu, Xiaohui; Li, Xiaodong; Gui, Zhenzhen; Xie, Qiaomu; Zhang, Wenxiao; Wu, Yulei; Wang, Hai-Qiao; Fang, Junfeng

2018-03-01

In this study, we investigated inorganic cesium lead halide perovskite semiconductor and tested its application in photovoltaics. Highly crystalline material was synthesized by two different approaches, including a high temperature route and a low temperature method. Inorganic-polymer hybrid solar cells based on solution-deposited layers of CsPbBr3 nanocrystals were successfully fabricated in ambient, with and without post treatments. The solar cells employing nanocrystals with short ligands, obtained from low temperature route, outperformed the devices with long ligands. The devices exhibited an efficiency up to 1.16%, with an open circuit voltage (V oc) of 0.87 V, a fill factor of 56.2% and a short-circuit current density (J sc) of 2.38 mA/cm2.

Minimally-invasive Ultrasound Devices for Treating Low Back Pain

NASA Astrophysics Data System (ADS)

Nau, William; Diederich, C.; Shu, R.; Kinsey, A.; Lotz, J.; Ferrier, W.; Sutton, J.; Pellegrino, R.

2006-05-01

Catheter-based ultrasound is being investigated for the potential to deliver heat to disc tissue for the treatment of discogenic low back pain. Two ultrasound applicator design configurations were tested: an intradiscal (IDUS) applicator which can be implanted directly within the disc, and an extradiscal (EDUS) applicator which is placed adjacent to the disc. In vitro heating trials were performed in human lumbar cadaveric disc segments instrumented with 24 thermocouples to obtain detailed maps of the temperature distributions. A low temperature elevation heating protocol in which the maximum temperature measured 5 mm away from the applicator is controlled to 52° C for the treatment period, and a high temperature elevation protocol (maximum temperature controlled to >70° C) were evaluated in this study. In vivo experiments were performed in sheep cervical spine using both applicator configurations, and both heating protocols. Steady-state temperature maps, and thermal doses (t43) calculated from the transient temperature data were used to assess regions of thermal damage within the disc. During the in vitro human disc studies using the high temperature protocol, temperatures were maintained at 71.5° ± 0.4°C 5 mm from an IDUS applicator implanted within the annular wall, with a maximum temperature (Tmax) of 78.6°C (t43 > 4.85 × 1010 min) measured 2 mm from the applicator. For the EDUS applicator, the temperature was maintained at 78.7° °C 5 mm from the applicator, with a Tmax of 86.3°C within 1 mm of the applicator surface. In the in vivo sheep studies, steady-state temperatures were maintained at 49.4° ± 0.3°C (t43 = 8.74 × 102 min) and 73.2° ± 0.6°C (t43 = 1.34 × 1010 min) with the IDUS applicator for the low and high temperature protocols, respectively. Using the EDUS applicator, temperatures were maintained at 54.4° ± 3.2°C (t43 = 4.11 × 104 min) and 69.4° ± 2.8°C (t43 = 2.81 × 109 min) for the two protocols. Directional heating was demonstrated with both applicator design configurations. Results from these studies demonstrated the capability to control temperature distributions within targeted regions of the disc using interstitial ultrasound with greater thermal penetration than can be achieved with the RF heating devices currently in clinical use. Thus interstitial ultrasound offers a potential alternative heating modality for the clinical management of low back pain.

Thermoelectric devices and applications for the same

DOEpatents

DeSteese, John G [Kennewick, WA; Olsen, Larry C [Richland, WA; Martin, Peter M [Kennewick, WA

2010-12-14

High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Thermoelectric devices and applications for the same

DOEpatents

Olsen, Larry C.; DeSteese, John G.; Martin, Peter M.; Johnston, John W.; Peters, Timothy J.

2016-03-08

High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Experimental Investigations, Modeling, and Analyses of High-Temperature Devices for Space Applications. Part 2

DTIC Science & Technology

1999-01-01

AMTEC cell during operation is essential to maximize the thermal -to- electric conversion efficiency of the device. The cell efficiency , rQ, is defined...the cell current is relatively high (usually above 2 A), and we found that the former thermal model of the conical evaporator wick underpredicted... high temperature, sodium vapor environment in a typical multi-tube AMTEC cell , where thermal radiation exchange is significant, an

An Energy-Saving Ceramic Cooler For Hot Arid Regions

NASA Astrophysics Data System (ADS)

Aimiuwu, Victor O.

2008-03-01

A ceramic cooling device is fabricated from fired clay materials. Its evaporative cooling process and temperature profiles are presented. The use of the device to produce cold water 15 ° C below the ambient temperature during the hottest part of the day is impressive. Its storage capability to preserve fresh fruits and vegetables for up to forty days has direct applications in rural areas where both conventional refrigeration and daily markets are unavailable.

Cryogenetically Cooled Field Effect Transistors for Low-Noise Systems

NASA Technical Reports Server (NTRS)

Wollack, Edward J.; Rabin, Douglas M. (Technical Monitor)

2002-01-01

Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

Cryogenically Cooled Field Effect Transistors for Low-Noise Systems

NASA Technical Reports Server (NTRS)

Wollack, Edward J.

2002-01-01

Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

Advances in Perovskite Solar Cells

PubMed Central

Zuo, Chuantian; Bolink, Henk J.; Han, Hongwei; Huang, Jinsong

2016-01-01

Organolead halide perovskite materials possess a combination of remarkable optoelectronic properties, such as steep optical absorption edge and high absorption coefficients, long charge carrier diffusion lengths and lifetimes. Taken together with the ability for low temperature preparation, also from solution, perovskite‐based devices, especially photovoltaic (PV) cells have been studied intensively, with remarkable progress in performance, over the past few years. The combination of high efficiency, low cost and additional (non‐PV) applications provides great potential for commercialization. Performance and applications of perovskite solar cells often correlate with their device structures. Many innovative device structures were developed, aiming at large‐scale fabrication, reducing fabrication cost, enhancing the power conversion efficiency and thus broadening potential future applications. This review summarizes typical structures of perovskite solar cells and comments on novel device structures. The applications of perovskite solar cells are discussed. PMID:27812475

10 CFR 431.62 - Definitions concerning commercial refrigerators, freezers and refrigerator-freezers.

Code of Federal Regulations, 2013 CFR

2013-01-01

... measurements taken during the test. Lighting occupancy sensor means a device which uses passive infrared...) Operates at a chilled, frozen, combination chilled and frozen, or variable temperature; (4) Displays or... doors, or no doors; (6) Is designed for pull-down temperature applications or holding temperature...

Fabrication of π-type flexible thermoelectric generators using an electrochemical deposition method for thermal energy harvesting applications at room temperature

NASA Astrophysics Data System (ADS)

Trung, Nguyen Huu; Van Toan, Nguyen; Ono, Takahito

2017-12-01

Although the electrochemical deposition of thermoelectric materials is a potential method for applications such as flexible thermoelectric power generators (FTEGs), to date the use of this technique is limited. This paper demonstrates a new fabrication of self-supported π-type FTEGs using electrochemical deposition of thermoelectric materials. Two types of the devices based on Bi2Te3-Cu and Bi2Te3-Sb2Te3 have been fully completed and characterized. The Bi2Te3-Cu and Bi2Te3-Sb2Te3 devices consist of 24 pairs of thermocouples that can harvest thermal energy with output power densities of 1-4 µW cm-2 from temperature differences of approximately 2 °C-4 °C from the human body. The highly scalable and new devices demonstrated in this work open up opportunities for the applications of electrochemically deposited thermoelectric materials.

Cryogenic Behavior of the High Temperature Crystal Oscillator PX-570

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Scherer, Steven

2011-01-01

Microprocessors, data-acquisition systems, and electronic controllers usually require timing signals for proper and accurate operation. These signals are, in most cases, provided by circuits that utilize crystal oscillators due to availability, cost, ease of operation, and accuracy. Stability of these oscillators, i.e. crystal characteristics, is usually governed, amongst other things, by the ambient temperature. Operation of these devices under extreme temperatures requires, therefore, the implementation of some temperature-compensation mechanism either through the manufacturing process of the oscillator part or in the design of the circuit to maintain stability as well as accuracy. NASA future missions into deep space and planetary exploration necessitate operation of electronic instruments and systems in environments where extreme temperatures along with wide-range thermal swings are countered. Most of the commercial devices are very limited in terms of their specified operational temperature while very few custom-made and military-grade parts have the ability to operate in a slightly wider range of temperature. Thus, it is becomes mandatory to design and develop circuits that are capable of operation efficiently and reliably under the space harsh conditions. This report presents the results obtained on the evaluation of a new (COTS) commercial-off-the-shelf crystal oscillator under extreme temperatures. The device selected for evaluation comprised of a 10 MHz, PX-570-series crystal oscillator. This type of device was recently introduced by Vectron International and is designed as high temperature oscillator [1]. These parts are fabricated using proprietary manufacturing processes designed specifically for high temperature and harsh environment applications [1]. The oscillators have a wide continuous operating temperature range; making them ideal for use in military and aerospace industry, industrial process control, geophysical fields, avionics, and engine control. They exhibit low jitter and phase noise, consume little power, and are suited for high shock and vibration applications. The unique package design of these crystal oscillators offers a small ceramic package footprint, as well as providing both through-hole mounting and surface mount options.

Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

NASA Astrophysics Data System (ADS)

Kizilyalli, I. C.; Aktas, O.

2015-12-01

There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction field-effect transistors with BV = 1000 V and drain currents of 4 A are fabricated and characterized over the same temperature range. It is demonstrated that vertical GaN devices (diodes and transistors) utilizing p-n junctions are suitable for most practical applications including automotive ones (210 K < T < 423 K). While devices are functional at cryogenic temperatures (77 K) there may be some limitations to their performance due the freeze-out of Mg acceptors.

Material System Engineering for Advanced Electrocaloric Cooling Technology

NASA Astrophysics Data System (ADS)

Qian, Xiaoshi

Electrocaloric effect refers to the entropy change and/or temperature change in dielectrics caused by the electric field induced polarization change. Recent discovery of giant ECE provides an opportunity to realize highly efficient cooling devices for a broad range of applications ranging from household appliances to industrial applications, from large-scale building thermal management to micro-scale cooling devices. The advances of electrocaloric (EC) based cooling device prototypes suggest that highly efficient cooling devices with compact size are achievable, which could lead to revolution in next generation refrigeration technology. This dissertation focuses on both EC based materials and cooling devices with their recent advances that address practical issues. Based on better understandings in designing an EC device, several EC material systems are studied and improved to promote the performances of EC based cooling devices. In principle, applying an electric field to a dielectric would cause change of dipolar ordering states and thus a change of dipolar entropy. Giant ECE observed in ferroelectrics near ferroelectric-paraelectric (FE-PE) transition temperature is owing to the large dipolar orientation change, between random-oriented dipolar states in paraelectric phase and spontaneous-ordered dipolar states in ferroelectric phases, which is induced by external electric fields. Besides pursuing large ECE, studies on EC cooling devices indicated that EC materials are required to possess wide operational temperature window, in which large ECE can be maintained for efficient operations. Although giant ECE was first predicted in ferroelectric polymers, where the large effect exhibits near FEPE phase transition, the narrow operation temperature window poses obstacles for these normal ferroelectrics to be conveniently perform in wide range of applications. In this dissertation, we demonstrated that the normal ferroelectric polymers can be converted to relaxor ferroelectric polymers which possess both giant ECE (27 Kelvin temperature drop) and much wider operating temperature window (over 50 kelvin covering RT) by proper defect modification which delicately tailors ferroelectrics in meso-, micro- and molecular scales. In addition, in order to be practical, EC device requires EC material can be driven at low electric fields upon achieve the large ECE. It is demonstrated in this dissertation that by facially modifying materials structure in meso-, micro- and molecular scale, lowfield ECE can be greatly improved. Large ECE, induced by low electric fields and existing in wide temperature window, is a major improvement in EC materials for practical applications. Besides EC polymers, this thesis also investigated EC ceramics. Due to several unique opportunities offered by the EC ceramics, Ba(ZrxTi 1-x)O3 (BZT), that is studied. (i) This class of EC ceramics offers a possibility to explore the invariant critical point (ICP), which maximizes the number of coexistent phase and provides a nearly vanishing energy barrier for switching among different phases. As demonstrated in this thesis, the BZT bulk ceramics at x˜ 0.2 exhibits a large adiabatic temperature drop DeltaTc=4.5 K, a large isothermal entropy change DeltaS = 8 Jkg-1K-1, a large EC coefficient (|DeltaT c/DeltaE| = 0.52x10-6 KmV-1 and DeltaS/DeltaE=0.93x10 -6 Jmkg-1K-1V-1) over a wide operating temperature range Tspan>30K. (ii) The thermal conductivity of EC ceramics is in general, much higher than that of EC polymers, and consequently they will allow EC cooling configurations which are not accessible by the EC polymers. Moreover, in the same device configuration, the high thermal conductivity of EC ceramics (kappa> 5 W/mK, compared with EC polymer, ˜ 0.25 W/mK) allows higher operation frequency and therefore a higher cooling power. (iii) Well-established fabrication processes of multilayer ceramic capacitor (MLCC) provide a foundation for the EC ceramic toward mass production. In this thesis, BZT thick film double layers have been fabricated and large ECE has been directly measured. EC induced temperature drop (DeltaT) around 6.3 °C and entropy change (DeltaS) of 11.0 Jkg-1K -1 are observed under an electric field of DeltaE=14.6 MV/m at 40 °C was observed in BZT thick film double layers. The result encourages further investigations on ECE in MLCC for practical applications. (Abstract shortened by ProQuest.).

Effect of temperature variations and thermal noise on the static and dynamic behavior of straintronics devices

NASA Astrophysics Data System (ADS)

Barangi, Mahmood; Mazumder, Pinaki

2015-11-01

A theoretical model quantifying the effect of temperature variations on the magnetic properties and static and dynamic behavior of the straintronics magnetic tunneling junction is presented. Four common magnetostrictive materials (Nickel, Cobalt, Terfenol-D, and Galfenol) are analyzed to determine their temperature sensitivity and to provide a comprehensive database for different applications. The variations of magnetic anisotropies are studied in detail for temperature levels up to the Curie temperature. The energy barrier of the free layer and the critical voltage required for flipping the magnetization vector are inspected as important metrics that dominate the energy requirements and noise immunity when the device is incorporated into large systems. To study the dynamic thermal noise, the effect of the Langevin thermal field on the free layer's magnetization vector is incorporated into the Landau-Lifshitz-Gilbert equation. The switching energy, flipping delay, write, and hold error probabilities are studied, which are important metrics for nonvolatile memories, an important application of the straintronics magnetic tunneling junctions.

Effect of substrate and temperature on the electronic properties of monolayer molybdenum disulfide field-effect transistors

NASA Astrophysics Data System (ADS)

Yang, Qizhi; Fang, Jiajia; Zhang, Guangru; Wang, Quan

2018-03-01

The use of two-dimensional nanostructured molybdenum disulfide (MoS2) films in field-effect transistors (FETs) in place of graphene was investigated. Monolayer MoS2 films were fabricated by chemical vapor deposition. The output and transfer curves of supported and suspended MoS2 FETs were measured. The mobility of the suspended device reached 364.2 cm2 V-1 s-1 at 150 °C. The hysteresis of the supported device in transfer curves was much larger than that of the suspended device, and it increased at higher temperatures. These results indicate that the device mobility was limited by Coulomb scattering at ambient temperature, and surface/interface phonon scattering at 150 °C, and the injection of electrons, via quantum tunneling through the Schottky barrier at the contact, was enhanced at higher temperatures and led to the increase of the hysteresis. The suspended MoS2 films show potential for application as a channel material in electronic devices, and further understanding the causes of hysteresis in a material is important for its use in technologies, such as memory devices and sensing cells.

Nanostructure and strain effects in active thin films for novel electronic device applications

NASA Astrophysics Data System (ADS)

Yuan, Zheng

2007-12-01

There are many potential applications of ferroelectric thin films that take advantage of their unique dielectric and piezoelectric properties, such as tunable microwave devices and thin-film active sensors for structural health monitoring (SHM). However, many technical issues still restrict practical applications of ferroelectric thin films, including high insertion loss, limited figure of merit, soft mode effect, large temperature coefficients, and others. The main theme of this thesis is the advanced technique developments, and the new ferroelectric thin films syntheses and investigations for novel device applications. A novel method of additional doping has been adopted to (Ba,Sr)TiO 3 (BSTO) thin films on MgO. By introducing 2% Mn into the stoichiometric BSTO, Mn:BSTO thin films have shown a greatly enhanced dielectric tunability and a reduced insertion loss at high frequencies (10-30 GHz). A new record of a large tunability of 80% with a high dielectric constant of 3800 and an extra low dielectric loss of 0.001 at 1 MHz at room-temperature was achieved. Meanwhile, the new highly epitaxial ferroelectric (Pb,Sr)TiO3 (PSTO) thin films have been synthesized on (001) MgO substrates. PSTO films demonstrated excellent high frequency dielectric properties with high dielectric constants above 1420 and large dielectric tunabilities above 34% at room-temperature up to 20 GHz. In addition, a smaller temperature coefficient from 80 K to 300 K was observed in PSTO films compared to BSTO films. These results indicate that the Mn:BSTO and PSTO films are both good candidates for developing room-temperature tunable microwave devices. Furthermore, crystalline ferroelectric BaTiO3 (BTO) thin films have been deposited directly on metal substrate Ni through a unique in-situ substrate pre-oxidation treatment. The highly oriented nanopillar structural BTO films were grown on the buffered layers created by the pre-oxidation treatment. No interdiffusion or reaction was observed at the interface. As-grown BTO films demonstrated good ferroelectric properties and an extremely large piezoelectric response of 130 (x 10-12 C/N). These excellent preliminary results enable the long-term perspective on the unobtrusive ferroelectric thin-film active sensors for SHM applications.

Evaluation of Silicon-on-Insulator HTOP-01 Operational Amplifier for Wide Temperature Operation

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Electronics capable of operation under extreme temperatures are required in many of NASA space exploration missions. Aerospace and military applications, as well as some terrestrial industries constitute environments where electronic systems are anticipated to be exposed to extreme temperatures and wide-range thermal swings. Electronics that are able to withstand and operate efficiently in such harsh environments would simplify, if not eliminate, traditional thermal control elements and their associated structures for proper ambient operation. As a result, overall system mass would be reduced, design would be simplified, and reliability would be improved. Electronic parts that are built utilizing silicon-on-insulator (SOI) technology are known to offer better radiation-tolerance compared to their conventional silicon counterparts, provide faster switching, and consume less power. They also exhibit reduced leakage current and, thus, they are often tailored for high temperature operation. These attributes make SOI-based devices suitable for use in harsh environments where extreme temperatures and wide thermal swings are anticipated. A new operational amplifier, based on silicon-on-insulator technology and geared for high temperature well-logging applications, was recently introduced by Honeywell Corporation. This HTOP-01 dual precision operational amplifier is a low power device, operates on a single supply, and has an internal oscillator and an external clocking option [1]. It is rated for operation from -55 C to +225 C with a maximum output current capability of 50 mA. The amplifier chip is designed as a 14-pin, hermetically-sealed device in a ceramic package. Table I shows some of the device manufacturer s specifications.

Evaluation of electrical test conditions in MIL-M-38510 slash sheets

NASA Astrophysics Data System (ADS)

Sandgren, K.

1980-08-01

Adequacy of MIL-M-38510 slash sheet requirements for electrical test conditions in an automated test environment were evaluated. Military temperature range commercial devices of 13 types from 6 manufacturers were purchased. Software for testing these devices and for varying the test conditions was written for the Tektronix S-3260 test system. The devices were tested to evaluate the effects of pin-condition settling time, measurement sequence of the same and different D-C parameters, temperature sequence, differently defined temperature ambients, variable measurement conditions, sequence of time measurements, pin-application sequence, and undesignated pin condition ambiguity. An alternative to current tri-state enable and disable time measurements is proposed; S-3260 'open' and 'ground' conditions are characterized; and suggestions for changes in MIL-M-38510 slash sheet specifications and MIL-STD-883 test methods are proposed, both to correct errors and ambiguities and to facilitate the gathering of repeatable data on automated test equipment. Data obtained showed no sensitivity to measurement or temperature sequence nor to temperature ambient, provided that test times were not excessive. V sub ICP tests and some low current measurements required allowance for a pin condition settling time because of the test system speed. Some pin condition application sequences yielded incorrect measurements. Undefined terminal conditions of output pins were found to affect I sub OS and propagation delay time measurements. Truth table test results varied with test frequency and V sub IL for low-power Schottky devices.

Temperature dependency of double material gate oxide (DMGO) symmetric dual-k spacer (SDS) wavy FinFET

NASA Astrophysics Data System (ADS)

Pradhan, K. P.; Priyanka; Sahu, P. K.

2016-01-01

Symmetric Dual-k Spacer (SDS) Trigate Wavy FinFET is a novel hybrid device that combines three significant and advanced technologies i.e., ultra-thin-body (UTB), FinFET, and symmetric spacer engineering on a single silicon on insulator (SOI) platform. This innovative architecture promises to enhance the device performance as compared to conventional FinFET without increasing the chip area. For the first time, we have incorporated two different dielectric materials (SiO2, and HfO2) as gate oxide to analyze the effect on various performance metrics of SDS wavy FinFET. This work evaluates the response of double material gate oxide (DMGO) on parameters like mobility, on current (Ion), transconductance (gm), transconductance generation factor (TGF), total gate capacitance (Cgg), and cutoff frequency (fT) in SDS wavy FinFET. This work also reveals the presence of biasing point i.e., zero temperature coefficient (ZTC) bias point. The ZTC bias point is that point where the device parameters become independent of temperature. The impact of operating temperature (T) on above said various performances are also subjected to extensive analysis. This further validates the reliability of DMGO-SDS FinFET and its application opportunities involved in modeling analog/RF circuits for a broad range of temperature applications. From extensive 3-D device simulation, we have determined that the inclusion of DMGO in SDS wavy FinFET is superior in performance.

Life test results of OLED-XL long-life devices for use in active matrix organic light emitting diode (AMOLED) displays for head mounted applications

NASA Astrophysics Data System (ADS)

Fellowes, David A.; Wood, Michael V.; Hastings, Arthur R., Jr.; Ghosh, Amalkumar P.; Prache, Olivier

2007-04-01

eMagin Corporation has recently developed long-life OLED-XL devices for use in their AMOLED microdisplays for head-worn applications. AMOLED displays have been known to exhibit high levels of performance with regards to contrast, response time, uniformity, and viewing angle, but a lifetime improvement has been perceived to be essential for broadening the applications of OLED's in the military and in the commercial market. The new OLED-XL devices gave the promise of improvements in usable lifetime over 6X what the standard full color, white, and green devices could provide. The US Army's RDECOM CERDEC NVESD performed life tests on several standard and OLED-XL panels from eMagin under a Cooperative Research and Development Agreement (CRADA). Displays were tested at room temperature, utilizing eMagin's Design Reference Kit driver, allowing computer controlled optimization, brightness adjustment, and manual temperature compensation. The OLED Usable Lifetime Model, developed under a previous NVESD/eMagin SPIE paper presented at DSS 2005, has been adjusted based on the findings of these tests. The result is a better understanding of the applicability of AMOLEDs in military and commercial head mounted systems: where good fits are made, and where further development might be needed.

Nanotechnology Based Green Energy Conversion Devices with Multifunctional Materials at Low Temperatures.

PubMed

Lu, Yuzheng; Afzal, Muhammad; Zhu, Bin; Wang, Baoyuan; Wang, Jun; Xia, Chen

2017-07-10

Nanocomposites (integrating the nano and composite technologies) for advanced fuel cells (NANOCOFC) demonstrate the great potential to reduce the operational temperature of solid oxide fuel cell (SOFC) significantly in the low temperature (LT) range 300-600ºC. NANOCOFC has offered the development of multi-functional materials composed of semiconductor and ionic materials to meet the requirements of low temperature solid oxide fuel cell (LTSOFC) and green energy conversion devices with their unique mechanisms. This work reviews the recent developments relevant to the devices and the patents in LTSOFCs from nanotechnology perspectives that reports advances including fabrication methods, material compositions, characterization techniques and cell performances. Finally, the future scope of LTSOFC with nanotechnology and the practical applications are also discussed. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Experimental investigations of an endoluminal ultrasound applicator for MR-guided thermal therapy of pancreatic cancer

NASA Astrophysics Data System (ADS)

Adams, Matthew; Salgaonkar, Vasant; Jones, Peter; Plata, Juan; Chen, Henry; Pauly, Kim Butts; Sommer, Graham; Diederich, Chris

2017-03-01

An MR-guided endoluminal ultrasound applicator has been proposed for palliative and potential curative thermal therapy of pancreatic tumors. Minimally invasive ablation or hyperthermia treatment of pancreatic tumor tissue would be performed with the applicator positioned in the gastrointestinal (GI) lumen, and sparing of the luminal tissue would be achieved with a water-cooled balloon surrounding the ultrasound transducers. This approach offers the capability of conformal volumetric therapy for fast treatment times, with control over the 3D spatial deposition of energy. Prototype endoluminal ultrasound applicators have been fabricated using 3D printed fixtures that seat two 3.2 or 5.6 MHz planar or curvilinear transducers and contain channels for wiring and water flow. Spiral surface coils have been integrated onto the applicator body to allow for device localization and tracking for therapies performed under MR guidance. Heating experiments with a tissue-mimicking phantom in a 3T MR scanner were performed and demonstrated capability of the prototype to perform volumetric heating through duodenal luminal tissue under real-time PRF-based MR temperature imaging (MRTI). Additional experiments were performed in ex vivo pig carcasses with the applicator inserted into the esophagus and aimed towards liver or soft tissue surrounding the spine under MR guidance. These experiments verified the capacity of heating targets up to 20-25 mm from the GI tract. Active device tracking and automated prescription of imaging and temperature monitoring planes through the applicator were made possible by using Hadamard encoded tracking sequences to obtain the coordinates of the applicator tracking coils. The prototype applicators have been integrated with an MR software suite that performs real-time device tracking and temperature monitoring.

Going Places No Infrared Temperature Devices Have Gone Before

NASA Technical Reports Server (NTRS)

2003-01-01

Exergen's IRt/c is a self-powered sensor that matches a thermocouple within specified temperature ranges and provides a predictable and repeatable signal outside of this specified range. Possessing an extremely fast time constant, the infrared technology allows users to measure product temperature without touching the product. The IRt/c uses a device called a thermopile to measure temperature and generate current. Traditionally, these devices are not available in a size that would be compatible with the Exergen IRt/c, based on NASA s quarterinch specifications. After going through five circuit designs to find a thermopile that would suit the IRt/c design and match the signal needed for output, Exergen maintains that it developed a model that totaled just 20 percent of the volume of the previous smallest detector in the world. Following completion of the project with Glenn, Exergen continued development of the IRt/c for other customers, spinning off a new product line called the micro IRt/c. This latest development has broadened applications for industries that previously could not use infrared thermometers due to size constraints. The first commercial use of the micro IRt/c involved an original equipment manufacturer that makes laminating machinery consisting of heated rollers in very tight spots. Accurate temperature measurement for this application requires close proximity to the heated rollers. With the micro IRt/c s 50-millisecond time constant, the manufacturer is able to gain closer access to the intended temperature targets for exact readings, thereby increasing productivity and staying ahead of competition.In a separate application, the infrared temperature sensor is being utilized for avalanche warnings in Switzerland. The IRt/c is mounted about 5 meters above the ground to measure the snow cover throughout the mountainous regions of the country.

Modeling and fabrication of 4H-SiC Schottky junction

NASA Astrophysics Data System (ADS)

Martychowiec, A.; Pedryc, A.; Kociubiński, A.

2017-08-01

The rapidly growing demand for electronic devices requires using of alternative semiconductor materials, which could replace conventional silicon. Silicon carbide has been proposed for these harsh environment applications (high temperature, high voltage, high power conditions) because of its wide bandgap, its high temperature operation ability, its excellent thermal and chemical stability, and its high breakdown electric field strength. The Schottky barrier diode (SBD) is known as one of the best refined SiC devices. This paper presents prepared model, simulations and description of technology of 4H-SiC Schottky junction as well as characterization of fabricated structures. The future aim of the application of the structures is an optical detection of an ultraviolet radiation. The model section contains a comparison of two different solutions of SBD's construction. Simulations - as a crucial process of designing electronic devices - have been performed using the ATLAS device of Silvaco TCAD software. As a final result the paper shows I-V characteristics of fabricated diodes.

Fiber optic temperature sensor gives rise to thermal analysis in complex product design

NASA Astrophysics Data System (ADS)

Cheng, Andrew Y. S.; Pau, Michael C. Y.

1996-09-01

A computer-adapted fiber-optic temperature sensing system has been developed which aims to study both the theoretical aspect of fiber temperature sensing and the experimental aspect of such system. The system consists of a laser source, a fiber sensing element, an electronic fringes counting device, and an on-line personal computer. The temperature measurement is achieved by the conventional double beam fringe counting method with optical path length changes in the sensing beam due to the fiber expansion. The system can automatically measure the temperature changes in a sensing fiber arm which provides an insight of the heat generation and dissipation of the measured system. Unlike the conventional measuring devices such as thermocouples or solid state temperature sensors, the fiber sensor can easily be wrapped and shaped to fit the surface of the measuring object or even inside a molded plastic parts such as a computer case, which gives much more flexibility and applicability to the analysis of heat generation and dissipation in the operation of these machine parts. The reference beam is being set up on a temperature controlled optical bench to facilitate high sensitivity and high temperature resolution. The measuring beam has a motorized beam selection device for multiple fiber beam measurement. The project has been demonstrated in the laboratory and the system sensitivity and resolution are found to be as high as 0.01 degree Celsius. It is expected the system will find its application in many design studies which require thermal budgeting.

Advances in high temperature components for AMTEC (alkali metal thermal-to-electric converter)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, R.M.; Jeffries-Nakamura, B.; Underwood, M.L.

1991-12-31

Long lifetimes are required for AMTEC (or sodium heat engine) components for aerospace and terrestrial applications, and the high heat input temperature as well as the alkali metal liquid and vapor environment places unusual demands on the materials used to construct AMTEC devices. In addition, it is important to maximize device efficiency and power density, while maintaining a long life capability. In addition to the electrode, which must provide both efficient electrode kinetics, transport of the alkali metal, and low electrical resistance, other high temperature components of the cell face equally demanding requirements. The beta{double_prime} alumina solid electrolyte (BASE), themore » seal between the BASE ceramic and its metallic transition to the hot alkali metal (liquid or vapor) source, and metallic components of the device are exposed to hot liquid alkali metal. Modification of AMTEC components may also be useful in optimizing the device for particular operating conditions. In particular, a potassium AMTEC may be expected to operate more efficiently at lower temperatures.« less

Advances in high temperature components for AMTEC (alkali metal thermal-to-electric converter)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, R.M.; Jeffries-Nakamura, B.; Underwood, M.L.

1991-01-01

Long lifetimes are required for AMTEC (or sodium heat engine) components for aerospace and terrestrial applications, and the high heat input temperature as well as the alkali metal liquid and vapor environment places unusual demands on the materials used to construct AMTEC devices. In addition, it is important to maximize device efficiency and power density, while maintaining a long life capability. In addition to the electrode, which must provide both efficient electrode kinetics, transport of the alkali metal, and low electrical resistance, other high temperature components of the cell face equally demanding requirements. The beta{double prime} alumina solid electrolyte (BASE),more » the seal between the BASE ceramic and its metallic transition to the hot alkali metal (liquid or vapor) source, and metallic components of the device are exposed to hot liquid alkali metal. Modification of AMTEC components may also be useful in optimizing the device for particular operating conditions. In particular, a potassium AMTEC may be expected to operate more efficiently at lower temperatures.« less

Fabricating nanowire devices on diverse substrates by simple transfer-printing methods.

PubMed

Lee, Chi Hwan; Kim, Dong Rip; Zheng, Xiaolin

2010-06-01

The fabrication of nanowire (NW) devices on diverse substrates is necessary for applications such as flexible electronics, conformable sensors, and transparent solar cells. Although NWs have been fabricated on plastic and glass by lithographic methods, the choice of device substrates is severely limited by the lithographic process temperature and substrate properties. Here we report three new transfer-printing methods for fabricating NW devices on diverse substrates including polydimethylsiloxane, Petri dishes, Kapton tapes, thermal release tapes, and many types of adhesive tapes. These transfer-printing methods rely on the differences in adhesion to transfer NWs, metal films, and devices from weakly adhesive donor substrates to more strongly adhesive receiver substrates. Electrical characterization of fabricated NW devices shows that reliable ohmic contacts are formed between NWs and electrodes. Moreover, we demonstrated that Si NW devices fabricated by the transfer-printing methods are robust piezoresistive stress sensors and temperature sensors with reliable performance.

Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.

PubMed

Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M

2016-12-01

Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

Microelectromechanical System (MEMS) Device Being Developed for Active Cooling and Temperature Control

NASA Technical Reports Server (NTRS)

Beach, Duane E.

2003-01-01

High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) using a Stirling thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface is being developed at the NASA Glenn Research Center to meet this need. The device can be used strictly in the cooling mode or can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly employ techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces, limited failure modes, and minimal induced vibration. The MEMS cooler has potential applications across a broad range of industries such as the biomedical, computer, automotive, and aerospace industries. The basic capabilities it provides can be categorized into four key areas: 1) Extended environmental temperature range in harsh environments; 2) Lower operating temperatures for electronics and other components; 3) Precision spatial and temporal thermal control for temperature-sensitive devices; and 4) The enabling of microsystem devices that require active cooling and/or temperature control. The rapidly expanding capabilities of semiconductor processing in general, and microsystems packaging in particular, present a new opportunity to extend Stirling-cycle cooling to the MEMS domain. The comparatively high capacity and efficiency possible with a MEMS Stirling cooler provides a level of active cooling that is impossible at the microscale with current state-of-the-art techniques. The MEMS cooler technology builds on decades of research at Glenn on Stirling-cycle machines, and capitalizes on Glenn s emerging microsystems capabilities.

Hybrid thermionic-photovoltaic converter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datas, A.

2016-04-04

A conceptual device for the direct conversion of heat into electricity is presented. This concept hybridizes thermionic (TI) and thermophotovoltaic (TPV) energy conversion in a single thermionic-photovoltaic (TIPV) solid-state device. This device transforms into electricity both the electron and photon fluxes emitted by an incandescent surface. This letter presents an idealized analysis of this device in order to determine its theoretical potential. According to this analysis, the key advantage of this converter, with respect to either TPV or TI, is the higher power density in an extended temperature range. For low temperatures, TIPV performs like TPV due to the negligiblemore » electron flux. On the contrary, for high temperatures, TIPV performs like TI due to the great enhancement of the electron flux, which overshadows the photon flux contribution. At the intermediate temperatures, ∼1650 K in the case of this particular study, I show that the power density potential of TIPV converter is twice as great as that of TPV and TI. The greatest impact concerns applications in which the temperature varies in a relatively wide range, for which averaged power density enhancement above 500% is attainable.« less

The low-temperature scintillation properties of bismuth germanate and its application to high-energy gamma radiation imaging devices.

PubMed

Piltingsrud, H V

1979-12-01

Bismuth germanate is a scintillation material with very high z, and high density (7.13 g/cm3). It is a rugged, nonhygroscopic, crystalline material with room-temperature scintillation properties described by previous investigators as having a light yield approximately 8% of that of NaI(Tl), emission peak at approximately 480 nm, decay constant of 0.3 microsec, and energy resolution congruent to 15% (FWHM) for Cs-137 gamma radiations. These properties make it an excellent candidate for applications involving the detection of high-energy gamma photons and positron annihilation radiation, particularly when good spatial resolution is desired. At room temperature, however, the application of this material is somewhat limited by low light output and poor energy resolution. This paper presents new data on the scintillation properties of bismuth germanate as a function of temperature from -- 196 degrees C to j0 degrees C. Low-temperature use of the material is shown to greatly improve its light yield and energy resolution. The implications of this work to the design of imaging devices for high-energy radiation in health physics and nuclear medicine are discussed.

Retrospective Analysis of Esophageal Heat Transfer for Active Temperature Management in Post-cardiac Arrest, Refractory Fever, and Burn Patients.

PubMed

Naiman, Melissa; Markota, Andrej; Hegazy, Ahmed; Dingley, John; Kulstad, Erik

2018-03-01

Core temperature management is an important aspect of critical care; preventing unintentional hypothermia, reducing fever, and inducing therapeutic hypothermia when appropriate are each tied to positive health outcomes. The purpose of this study is to evaluate the performance of a new temperature management device that uses the esophageal environment to conduct heat transfer. De-identified patient data were aggregated from three clinical sites where an esophageal heat transfer device (EHTD) was used to provide temperature management. The device was evaluated against temperature management guidelines and best practice recommendations, including performance during induction, maintenance, and cessation of therapy. Across all active cooling protocols, the average time-to-target was 2.37 h and the average maintenance phase was 22.4 h. Patients spent 94.9% of the maintenance phase within ±1.0°C and 67.2% within ±0.5°C (574 and 407 measurements, respectively, out of 605 total). For warming protocols, all of the patient temperature readings remained above 36°C throughout the surgical procedure (average 4.66 h). The esophageal heat transfer device met performance expectations across a range of temperature management applications in intensive care and burn units. Patients met and maintained temperature goals without any reported adverse events.

Intra-articular knee temperature changes: ice versus cryotherapy device.

PubMed

Warren, Todd A; McCarty, Eric C; Richardson, Airron L; Michener, Todd; Spindler, Kurt P

2004-03-01

Cryotherapy is commonly applied without research documenting the intra-articular (IA) temperature changes or subject discomfort between ice and a cryotherapy device. The null hypothesis is that no difference would be observed in IA temperature decline or subject tolerance between ice and the cryotherapy device in normal knees. Prospective, within-subject controlled clinical trial. Twelve subjects had IA temperature in suprapatellar pouch and skin recorded bilaterally after application of cryotherapy versus ice. Subject tolerance was recorded by 10-cm visual analog scale (VAS). Statistical evaluation was by Spearman's correlation analysis and paired, nonparametric Wilcoxon's signed rank test. Both significantly lowered (P < 0.001) skin and IA temperature with median decreases (ice/cryotherapy) at 30 (3.3 degrees C/2.2 degrees C), 60 (12.8 degrees C/7.1 degrees C), and 90 (15.2 degrees C/9.7 degrees C) minutes. However, ice lowered the IA temperature significantly more than the cryotherapy device (P < 0.001) and was more painful by VAS at 30 and 60 minutes (P < 0.01). Both methods produced large declines in skin and IA temperatures. However, ice was more effective yet resulted in higher pain scores. The authors hypothesize that IA temperatures below a threshold are associated with increased perceived pain.

Endocervical ultrasound applicator for integrated hyperthermia and HDR brachytherapy in the treatment of locally advanced cervical carcinoma.

PubMed

Wootton, Jeffery H; Hsu, I-Chow Joe; Diederich, Chris J

2011-02-01

The clinical success of hyperthermia adjunct to radiotherapy depends on adequate temperature elevation in the tumor with minimal temperature rise in organs at risk. Existing technologies for thermal treatment of the cervix have limited spatial control or rapid energy falloff. The objective of this work is to develop an endocervical applicator using a linear array of multisectored tubular ultrasound transducers to provide 3-D conformal, locally targeted hyperthermia concomitant to radiotherapy in the uterine cervix. The catheter-based device is integrated within a HDR brachytherapy applicator to facilitate sequential and potentially simultaneous heat and radiation delivery. Treatment planning images from 35 patients who underwent HDR brachytherapy for locally advanced cervical cancer were inspected to assess the dimensions of radiation clinical target volumes (CTVs) and gross tumor volumes (GTVs) surrounding the cervix and the proximity of organs at risk. Biothermal simulation was used to identify applicator and catheter material parameters to adequately heat the cervix with minimal thermal dose accumulation in nontargeted structures. A family of ultrasound applicators was fabricated with two to three tubular transducers operating at 6.6-7.4 MHz that are unsectored (360 degrees), bisectored (2 x 180 degrees), or trisectored (3 x 120 degrees) for control of energy deposition in angle and along the device length in order to satisfy anatomical constraints. The device is housed in a 6 mm diameter PET catheter with cooling water flow for endocervical implantation. Devices were characterized by measuring acoustic efficiencies, rotational acoustic intensity distributions, and rotational temperature distributions in phantom. The CTV in HDR brachytherapy plans extends 20.5 +/- 5.0 mm from the endocervical tandem with the rectum and bladder typically <8 mm from the target boundary. The GTV extends 19.4 +/- 7.3 mm from the tandem. Simulations indicate that for 60 min treatments the applicator can heat to 41 degrees C and deliver > 5EM(43 degrees C) over 4-5 cm diameter with Tmax < 45 degrees C and 1 kg m(-3) s(-1) blood perfusion. The 41 degrees C contour diameter is reduced to 3-4 cm at 3 kg m(-3) s(-1) perfusion. Differential power control to transducer elements and sectors demonstrates tailoring of heating along the device length and in angle. Sector cuts are associated with a 14-47 degrees acoustic dead zone, depending on cut width, resulting in a approximately 2-4 degrees C temperature reduction within the dead zone below Tmax. Dead zones can be oriented for thermal protection of the rectum and bladder. Fabricated devices have acoustic efficiencies of 33.4%-51.8% with acoustic output that is well collimated in length, reflects the sectoring strategy, and is strongly correlated with temperature distributions. A catheter-based ultrasound applicator was developed for endocervical implantation with locally targeted, 3-D conformal thermal delivery to the uterine cervix. Feasibility of heating clinically relevant target volumes was demonstrated with power control along the device length and in angle to treat the cervix with minimal thermal dose delivery to the rectum and bladder.

30 CFR 7.97 - Application requirements.

Code of Federal Regulations, 2011 CFR

2011-07-01

... internal parts, exhaust inlet and outlet, sensors, and the exhaust gas path through the exhaust conditioner... temperature sensor setting and exhaust gas temperature sensor setting used to meet the performance... sensors, flame arresters, exhaust conditioner, emergency intake air shutoff device, automatic fuel shutoff...

30 CFR 7.97 - Application requirements.

Code of Federal Regulations, 2010 CFR

2010-07-01

... internal parts, exhaust inlet and outlet, sensors, and the exhaust gas path through the exhaust conditioner... temperature sensor setting and exhaust gas temperature sensor setting used to meet the performance... sensors, flame arresters, exhaust conditioner, emergency intake air shutoff device, automatic fuel shutoff...

Reliability Testing of NASA Piezocomposite Actuators

NASA Technical Reports Server (NTRS)

Wilkie, W.; High, J.; Bockman, J.

2002-01-01

NASA Langley Research Center has developed a low-cost piezocomposite actuator which has application for controlling vibrations in large inflatable smart space structures, space telescopes, and high performance aircraft. Tests show the NASA piezocomposite device is capable of producing large, directional, in-plane strains on the order of 2000 parts-per-million peak-to-peak, with no reduction in free-strain performance to 100 million electrical cycles. This paper describes methods, measurements, and preliminary results from our reliability evaluation of the device under externally applied mechanical loads and at various operational temperatures. Tests performed to date show no net reductions in actuation amplitude while the device was moderately loaded through 10 million electrical cycles. Tests were performed at both room temperature and at the maximum operational temperature of the epoxy resin system used in manufacture of the device. Initial indications are that actuator reliability is excellent, with no actuator failures or large net reduction in actuator performance.

Method and apparatus of cryogenic cooling for high temperature superconductor devices

DOEpatents

Yuan, Xing; Mine, Susumu

2005-02-15

A method and apparatus for providing cryogenic cooling to HTS devices, in particular those that are used in high-voltage electric power applications. The method involves pressurizing liquid cryogen to above one atmospheric pressure to improve its dielectric strength, while sub-cooling the liquid cryogen to below its saturation temperature in order to improve the performance of the HTS components of the device. An apparatus utilizing such a cooling method consists of a vessel that contains a pressurized gaseous cryogen region and a sub-cooled liquid cryogen bath, a liquid cryogen heating coupled with a gaseous cryogen venting scheme to maintain the pressure of the cryogen to a value in a range that corresponds to optimum dielectric strength of the liquid cryogen, and a cooling system that maintains the liquid cryogen at a temperature below its boiling point to improve the performance of HTS materials used in the device.

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

PubMed Central

Salah, Tarek Ben; Khachroumi, Sofiane; Morel, Hervé

2010-01-01

Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon), permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET) as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned. PMID:22315547

Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps

DOE PAGES

Choe, Hwan Sung; Suh, Joonki; Ko, Changhyun; ...

2017-08-02

Efficient thermal management at the nanoscale is important for reducing energy consumption and dissipation in electronic devices, lab-on-a-chip platforms and energy harvest/conversion systems. For many of these applications, it is much desired to have a solid-state structure that reversibly switches thermal conduction with high ON/OFF ratios and at high speed. We describe design and implementation of a novel, all-solid-state thermal switching device by nanostructured phase transformation, i.e., modulation of contact pressure an d area between two poly-silicon surfaces activated by microstructural change of a vanadium dioxide (VO 2 ) thin film. Our solid-state devices demonstrate large and reversible alteration ofmore » cross-plane thermal conductance as a function of temperature, achieving a conductance ratio of at least 2.5. This new approach using nanostructured phase transformation provides new opportunities for applications that require advanced temperature and heat regulations.« less

Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choe, Hwan Sung; Suh, Joonki; Ko, Changhyun

Efficient thermal management at the nanoscale is important for reducing energy consumption and dissipation in electronic devices, lab-on-a-chip platforms and energy harvest/conversion systems. For many of these applications, it is much desired to have a solid-state structure that reversibly switches thermal conduction with high ON/OFF ratios and at high speed. We describe design and implementation of a novel, all-solid-state thermal switching device by nanostructured phase transformation, i.e., modulation of contact pressure an d area between two poly-silicon surfaces activated by microstructural change of a vanadium dioxide (VO 2 ) thin film. Our solid-state devices demonstrate large and reversible alteration ofmore » cross-plane thermal conductance as a function of temperature, achieving a conductance ratio of at least 2.5. This new approach using nanostructured phase transformation provides new opportunities for applications that require advanced temperature and heat regulations.« less

The Conference on High Temperature Electronics

NASA Technical Reports Server (NTRS)

Hamilton, D. J.; Mccormick, J. B.; Kerwin, W. J.; Narud, J. A.

1981-01-01

The status of and directions for high temperature electronics research and development were evaluated. Major objectives were to (1) identify common user needs; (2) put into perspective the directions for future work; and (3) address the problem of bringing to practical fruition the results of these efforts. More than half of the presentations dealt with materials and devices, rather than circuits and systems. Conference session titles and an example of a paper presented in each session are (1) User requirements: High temperature electronics applications in space explorations; (2) Devices: Passive components for high temperature operation; (3) Circuits and systems: Process characteristics and design methods for a 300 degree QUAD or AMP; and (4) Packaging: Presently available energy supply for high temperature environment.

The Conference on High Temperature Electronics

NASA Astrophysics Data System (ADS)

Hamilton, D. J.; McCormick, J. B.; Kerwin, W. J.; Narud, J. A.

The status of and directions for high temperature electronics research and development were evaluated. Major objectives were to (1) identify common user needs; (2) put into perspective the directions for future work; and (3) address the problem of bringing to practical fruition the results of these efforts. More than half of the presentations dealt with materials and devices, rather than circuits and systems. Conference session titles and an example of a paper presented in each session are (1) User requirements: High temperature electronics applications in space explorations; (2) Devices: Passive components for high temperature operation; (3) Circuits and systems: Process characteristics and design methods for a 300 degree QUAD or AMP; and (4) Packaging: Presently available energy supply for high temperature environment.

Home automation in the workplace.

PubMed

McCormack, J E; Tello, S F

1994-01-01

Environmental control units and home automation devices contribute to the independence and potential of individuals with disabilities, both at work and at home. Devices currently exist that can assist people with physical, cognitive, and sensory disabilities to control lighting, appliances, temperature, security, and telephone communications. This article highlights several possible applications for these technologies and discusses emerging technologies that will increase the benefits these devices offer people with disabilities.

77 FR 30555 - Petitions for Modification of Application of Existing Mandatory Safety Standards

Federal Register 2010, 2011, 2012, 2013, 2014

2012-05-23

..., oscilloscopes, vibration analysis machines, insulation testers (meggers), and cable fault detectors (impulse... temperature probes; infrared temperature devices and recorders; insulation testers (meggers); voltage, current..., vibration analysis machines, insulation testers (meggers), and cable fault detectors (impulse generators and...

Ultra-miniature wireless temperature sensor for thermal medicine applications

PubMed Central

Khairi, Ahmad; Hung, Shih-Chang; Paramesh, Jeyanandh; Fedder, Gary; Rabin, Yoed

2017-01-01

This study presents a prototype design of an ultra-miniature, wireless, battery-less, and implantable temperature-sensor, with applications to thermal medicine such as cryosurgery, hyperthermia, and thermal ablation. The design aims at a sensory device smaller than 1.5 mm in diameter and 3 mm in length, to enable minimally invasive deployment through a hypodermic needle. While the new device may be used for local temperature monitoring, simultaneous data collection from an array of such sensors can be used to reconstruct the 3D temperature field in the treated area, offering a unique capability in thermal medicine. The new sensory device consists of three major subsystems: a temperature-sensing core, a wireless data-communication unit, and a wireless power reception and management unit. Power is delivered wirelessly to the implant from an external source using an inductive link. To meet size requirements while enhancing reliability and minimizing cost, the implant is fully integrated in a regular foundry CMOS technology (0.15 μm in the current study), including the implant-side inductor of the power link. A temperature-sensing core that consists of a proportional-to-absolute-temperature (PTAT) circuit has been designed and characterized. It employs a microwatt chopper stabilized op-amp and dynamic element-matched current sources to achieve high absolute accuracy. A second order sigma-delta (Σ-Δ) analog-to-digital converter (ADC) is designed to convert the temperature reading to a digital code, which is transmitted by backscatter through the same antenna used for receiving power. A high-efficiency multi-stage differential CMOS rectifier has been designed to provide a DC supply to the sensing and communication subsystems. This paper focuses on the development of the all-CMOS temperature sensing core circuitry part of the device, and briefly reviews the wireless power delivery and communication subsystems. PMID:28989222

Electronics for Deep Space Cryogenic Applications

NASA Technical Reports Server (NTRS)

Patterson, R. L.; Hammond, A.; Dickman, J. E.; Gerber, S. S.; Elbuluk, M. E.; Overton, E.

2002-01-01

Deep space probes and planetary exploration missions require electrical power management and control systems that are capable of efficient and reliable operation in very cold temperature environments. Typically, in deep space probes, heating elements are used to keep the spacecraft electronics near room temperature. The utilization of power electronics designed for and operated at low temperature will contribute to increasing efficiency and improving reliability of space power systems. At NASA Glenn Research Center, commercial-off-the-shelf devices as well as developed components are being investigated for potential use at low temperatures. These devices include semiconductor switching devices, magnetics, and capacitors. Integrated circuits such as digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being evaluated. In this paper, results will be presented for selected analog-to-digital converters, oscillators, DC/DC converters, and pulse width modulation (PWM) controllers.

Robust label-free biosensing using microdisk laser arrays with on-chip references.

PubMed

Wondimu, S F; Hippler, M; Hussal, C; Hofmann, A; Krämmer, S; Lahann, J; Kalt, H; Freude, W; Koos, C

2018-02-05

Whispering-gallery mode (WGM) microdisk lasers show great potential for highly sensitive label-free detection in large-scale sensor arrays. However, when used in practical applications under normal ambient conditions, these devices suffer from temperature fluctuations and photobleaching. Here we demonstrate that these challenges can be overcome by a novel referencing scheme that allows for simultaneous compensation of temperature drift and photobleaching. The technique relies on reference structures protected by locally dispensed passivation materials, and can be scaled to extended arrays of hundreds of devices. We prove the viability of the concept in a series of experiments, demonstrating robust and sensitive label-free detection over a wide range of constant or continuously varying temperatures. To the best of our knowledge, these measurements represent the first demonstration of biosensing in active WGM devices with simultaneous compensation of both photobleaching and temperature drift.

Thermoresponsive light scattering device utilizing surface behavior effects between polyimide and an ionic liquid-water mixture exhibiting lower critical solution temperature (LCST)-type phase separation

NASA Astrophysics Data System (ADS)

Goda, Kazuya; Takatoh, Kohki; Funasako, Yusuke; Inokuchi, Makoto

2018-06-01

We proposed a thermoresponsive light scattering device that utilizes the surface behavior between polyimide and an ionic liquid-water mixture exhibiting lower critical solution temperature (LCST)-type phase separation. The LCST behavior for an ionic liquid device utilizing the polyimide with and without alkyl side chains was investigated. In the here-reported ionic liquid device that utilized the polyimide with alkyl side chains, [nBu4P][CF3COO] droplets were generated by phase separation—they were predominantly formed at the alkyl surface by a surface pinning effect. A stable transmittance in the opaque state could be obtained with this device. In contrast, an ionic liquid device using polyimide without alkyl side chains deteriorated transmittance in the opaque state because there was no surface pinning effect. Additionally, the viewing angle, contrast ratio, and heat cycle testing of this ionic liquid device with polyimide with alkyl side chains were also investigated. The results indicated that no parallax was obtained and that the ionic liquid device has a stable transmittance (verified by heat cycle testing). This unique device is expected to find use in the smart window applications that are activated by temperature changes.

Diffraction grating-based sensing optofluidic device for measuring the refractive index of liquids.

PubMed

Calixto, Sergio; Bruce, Neil C; Rosete-Aguilar, Martha

2016-01-11

We describe a simple and versatile optical sensing device for measuring refractive index of liquids. The sensor consists of a sinusoidal relief grating in a glass cell. Device calibration is done by pouring in the cell different liquids of known refractive indices. Each time a liquid is poured first order intensity is measured. The fabrication process and testing of the prototype device is described. An application in the measurement of temperature is also presented.

Positive and negative gain exceeding unity magnitude in silicon quantum well metal-oxide-semiconductor transistors

NASA Astrophysics Data System (ADS)

Hu, Gangyi; Wijesinghe, Udumbara; Naquin, Clint; Maggio, Ken; Edwards, H. L.; Lee, Mark

2017-10-01

Intrinsic gain (AV) measurements on Si quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors show that these devices can have |AV| > 1 in quantum transport negative transconductance (NTC) operation at room temperature. QW NMOS devices were fabricated using an industrial 45 nm technology node process incorporating ion implanted potential barriers to define a lateral QW in the conduction channel under the gate. While NTC at room temperature arising from transport through gate-controlled QW bound states has been previously established, it was unknown whether the quantum NTC mechanism could support gain magnitude exceeding unity. Bias conditions were found giving both positive and negative AV with |AV| > 1 at room temperature. This result means that QW NMOS devices could be useful in amplifier and oscillator applications.

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

PubMed

Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

2011-11-22

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch(-2), ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

PubMed Central

Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

2011-01-01

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch−2, ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns. PMID:22109527

Experimental Demonstration of xor Operation in Graphene Magnetologic Gates at Room Temperature

NASA Astrophysics Data System (ADS)

Wen, Hua; Dery, Hanan; Amamou, Walid; Zhu, Tiancong; Lin, Zhisheng; Shi, Jing; Žutić, Igor; Krivorotov, Ilya; Sham, L. J.; Kawakami, Roland K.

2016-04-01

We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting a single-layer graphene spin channel and relies on spin injection and spin transport in the graphene. We utilize electrical bias tuning of spin injection to balance the inputs and achieve "exclusive or" (xor) logic operation. Furthermore, a simulation of the device performance shows that substantial improvement towards spintronic applications can be achieved by optimizing the device parameters such as the device dimensions. This advance holds promise as a basic building block for spin-based information processing.

Tritiated amorphous silicon for micropower applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kherani, N.P.; Kosteski, T.; Zukotynski, S.

1995-10-01

The application of tritiated amorphous silicon as an intrinsic energy conversion semiconductor for radioluminescent structures and betavoltaic devices is presented. Theoretical analysis of the betavoltaic application shows an overall efficiency of 18% for tritiated amorphous silicon. This is equivalent to a 330 Ci intrinsic betavoltaic device producing 1 mW of power for 12 years. Photoluminescence studies of hydrogenated amorphous silicon, a-Si:H, show emission in the infra-red with a maximum quantum efficiency of 7.2% at 50 K; this value drops by 3 orders of magnitude at a temperature of 300 K. Similar studies of hydrogenated amorphous carbon show emission in themore » visible with an estimated quantum efficiency of 1% at 300 K. These results suggest that tritiated amorphous carbon may be the more promising candidate for room temperature radioluminescence in the visible. 18 refs., 5 figs.« less

Materials process and applications of single grain (RE)-Ba-Cu-O bulk high-temperature superconductors

NASA Astrophysics Data System (ADS)

Li, Beizhan; Zhou, Difan; Xu, Kun; Hara, Shogo; Tsuzuki, Keita; Miki, Motohiro; Felder, Brice; Deng, Zigang; Izumi, Mitsuru

2012-11-01

This paper reviews recent advances in the melt process of (RE)-Ba-Cu-O [(RE)BCO, where RE represents a rare earth element] single grain high-temperature superconductors (HTSs), bulks and its applications. The efforts on the improvement of the magnetic flux pinning with employing the top-seeded melt-growth process technique and using a seeded infiltration and growth process are discussed. Which including various chemical doping strategies and controlled pushing effect based on the peritectic reaction of (RE)BCO. The typical experiment results, such as the largest single domain bulk, the clear TEM observations and the significant critical current density, are summarized together with the magnetization techniques. Finally, we highlight the recent prominent progress of HTS bulk applications, including Maglev, flywheel, power device, magnetic drug delivery system and magnetic resonance devices.

High-Temperature High-Power Packaging Techniques for HEV Traction Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elshabini, Aicha; Barlow, Fred D.

A key issue associated with the wider adoption of hybrid-electric vehicles (HEV) and plug in hybrid-electric vehicles (PHEV) is the implementation of the power electronic systems that are required in these products. One of the primary industry goals is the reduction in the price of these vehicles relative to the cost of traditional gasoline powered vehicles. Today these systems, such as the Prius, utilize one coolant loop for the engine at approximately 100 C coolant temperatures, and a second coolant loop for the inverter at 65 C. One way in which significant cost reduction of these systems could be achievedmore » is through the use of a single coolant loop for both the power electronics as well as the internal combustion engine (ICE). This change in coolant temperature significantly increases the junction temperatures of the devices and creates a number of challenges for both device fabrication and the assembly of these devices into inverters and converters for HEV and PHEV applications. Traditional power modules and the state-of-the-art inverters in the current HEV products, are based on chip and wire assembly and direct bond copper (DBC) on ceramic substrates. While a shift to silicon carbide (SiC) devices from silicon (Si) devices would allow the higher operating temperatures required for a single coolant loop, it also creates a number of challenges for the assembly of these devices into power inverters. While this traditional packaging technology can be extended to higher temperatures, the key issues are the substrate material and conductor stability, die bonding material, wire bonds, and bond metallurgy reliability as well as encapsulation materials that are stable at high operating temperatures. The larger temperature differential during power cycling, which would be created by higher coolant temperatures, places tremendous stress on traditional aluminum wire bonds that are used to interconnect power devices. Selection of the bond metallurgy and wire bond geometry can play a key role in mitigating this stress. An alternative solution would be to eliminate the wire bonds completely through a fundamentally different method of forming a reliable top side interconnect. Similarly, the solders used in most power modules exhibit too low of a liquidus to be viable solutions for maximum junction temperatures of 200 C. Commonly used encapsulation materials, such as silicone gels, also suffer from an inability to operate at 200 C for extended periods of time. Possible solutions to these problems exist in most cases but require changes to the traditional manufacturing process used in these modules. In addition, a number of emerging technologies such as Si nitride, flip-chip assembly methods, and the elimination of base-plates would allow reliable module development for operation of HEV and PHEV inverters at elevated junction temperatures.« less

High-temperature electronics

NASA Technical Reports Server (NTRS)

Seng, Gary T.

1987-01-01

In recent years, there was a growing need for electronics capable of sustained high-temperature operation for aerospace propulsion system instrumentation, control and condition monitoring, and integrated sensors. The desired operating temperature in some applications exceeds 600 C, which is well beyond the capability of currently available semiconductor devices. Silicon carbide displays a number of properties which make it very attractive as a semiconductor material, one of which is the ability to retain its electronic integrity at temperatures well above 600 C. An IR-100 award was presented to NASA Lewis in 1983 for developing a chemical vapor deposition process to grow single crystals of this material on standard silicon wafers. Silicon carbide devices were demonstrated above 400 C, but much work remains in the areas of crystal growth, characterization, and device fabrication before the full potential of silicon carbide can be realized. The presentation will conclude with current and future high-temperature electronics program plans. Although the development of silicon carbide falls into the category of high-risk research, the future looks promising, and the potential payoffs are tremendous.

Voltage stress effects on microcircuit accelerated life test failure rates

NASA Technical Reports Server (NTRS)

Johnson, G. M.

1976-01-01

The applicability of Arrhenius and Eyring reaction rate models for describing microcircuit aging characteristics as a function of junction temperature and applied voltage was evaluated. The results of a matrix of accelerated life tests with a single metal oxide semiconductor microcircuit operated at six different combinations of temperature and voltage were used to evaluate the models. A total of 450 devices from two different lots were tested at ambient temperatures between 200 C and 250 C and applied voltages between 5 Vdc and 15 Vdc. A statistical analysis of the surface related failure data resulted in bimodal failure distributions comprising two lognormal distributions; a 'freak' distribution observed early in time, and a 'main' distribution observed later in time. The Arrhenius model was shown to provide a good description of device aging as a function of temperature at a fixed voltage. The Eyring model also appeared to provide a reasonable description of main distribution device aging as a function of temperature and voltage. Circuit diagrams are shown.

Modeling and Simulation of - and Silicon Germanium-Base Bipolar Transistors Operating at a Wide Range of Temperatures.

NASA Astrophysics Data System (ADS)

Shaheed, M. Reaz

1995-01-01

Higher speed at lower cost and at low power consumption is a driving force for today's semiconductor technology. Despite a substantial effort toward achieving this goal via alternative technologies such as III-V compounds, silicon technology still dominates mainstream electronics. Progress in silicon technology will continue for some time with continual scaling of device geometry. However, there are foreseeable limits on achievable device performance, reliability and scaling for room temperature technologies. Thus, reduced temperature operation is commonly viewed as a means for continuing the progress towards higher performance. Although silicon CMOS will be the first candidate for low temperature applications, bipolar devices will be used in a hybrid fashion, as line drivers or in limited critical path elements. Silicon -germanium-base bipolar transistors look especially attractive for low-temperature bipolar applications. At low temperatures, various new physical phenomena become important in determining device behavior. Carrier freeze-out effects which are negligible at room temperature, become of crucial importance for analyzing the low temperature device characteristics. The conventional Pearson-Bardeen model of activation energy, used for calculation of carrier freeze-out, is based on an incomplete picture of the physics that takes place and hence, leads to inaccurate results at low temperatures. Plasma -induced bandgap narrowing becomes more pronounced in device characteristics at low temperatures. Even with modern numerical simulators, this effect is not well modeled or simulated. In this dissertation, improved models for such physical phenomena are presented. For accurate simulation of carrier freeze-out, the Pearson-Bardeen model has been extended to include the temperature dependence of the activation energy. The extraction of the model is based on the rigorous, first-principle theoretical calculations available in the literature. The new model is shown to provide consistently accurate values for base sheet resistance for both Si- and SiGe-base transistors over a wide range of temperatures. A model for plasma-induced bandgap narrowing suitable for implementation in a numerical simulator has been developed. The appropriate method of incorporating this model in a drift -diffusion solver is described. The importance of including this model for low temperature simulation is demonstrated. With these models in place, the enhanced simulator has been used for evaluating and designing the Si- and SiGe-base bipolar transistors. Silicon-germanium heterojunction bipolar transistors offer significant performance and cost advantages over conventional technologies in the production of integrated circuits for communications, computer and transportation applications. Their high frequency performance at low cost, will find widespread use in the currently exploding wireless communication market. However, the high performance SiGe-base transistors are prone to have a low common-emitter breakdown voltage. In this dissertation, a modification in the collector design is proposed for improving the breakdown voltage without sacrificing the high frequency performance. A comprehensive simulation study of p-n-p SiGe-base transistors has been performed. Different figures of merit such as drive current, current gain, cut -off frequency and Early voltage were compared between a graded germanium profile and an abrupt germanium profile. The differences in the performance level between the two profiles diminishes as the base width is scaled down.

Performance and Characterization of Magnetic Penetration Thermometer Devices for X-Ray Spectroscopy

NASA Technical Reports Server (NTRS)

Porst, J. -P.; Adams, J. S.; Bandler, S. R.; Balvin, M.; Busch, S. E.; Denis, K. L.; Kelly, D.; Nagler, P.; Sadleir, J. E.; Seidel, G. M.;

Carbon Nanotube Electrode Arrays For Enhanced Chemical and Biological Sensing

NASA Technical Reports Server (NTRS)

Han, Jie

2003-01-01

Applications of carbon nanotubes for ultra-sensitive electrical sensing of chemical and biological species have been a major focus in NASA Ames Center for Nanotechnology. Great progress has been made toward controlled growth and chemical functionalization of vertically aligned carbon nanotube arrays and integration into micro-fabricated chip devices. Carbon nanotube electrode arrays devices have been used for sub-attomole detection of DNA molecules. Interdigitated carbon nanotubes arrays devices have been applied to sub ppb (part per billion) level chemical sensing for many molecules at room temperature. Stability and reliability have also been addressed in our device development. These results show order of magnitude improvement in device performance, size and power consumption as compared to micro devices, promising applications of carbon nanotube electrode arrays for clinical molecular diagnostics, personal medical testing and monitoring, and environmental monitoring.

Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion

NASA Astrophysics Data System (ADS)

Kocyigit, Adem; Orak, İkram; Turut, Abdulmecit

2018-03-01

Owing to importance of ZnO in electronics, Au/ZnO/n-type Si device was fabricated to investigate its dielectric properties by aid of capacitance-conductance-voltage measurements. While the ZnO thin film layer on the n-type Si was formed by atomic layer deposition (ALD) technique, the rectifying and ohmic contacts were obtained by thermal evaporation. The surface morphology of ZnO thin film was characterized using atomic force microscopy (AFM) to show its compatibility as interfacial layer in the Au/ZnO/n-type Si device. The dielectric properties of the device were examined in terms of dielectric parameters such as dielectric constant (ɛ‧), dielectric loss (ɛ″), loss tangent (tan δ), the real and imaginary parts of electric modulus (M ‧ and M ″) and ac electrical conductivity (σ) depending on applied voltages (from -1 to 2 V) and temperatures (from 140 K to 360 K) ranges. The results have revealed that interfacial polarization and charge carriers are the important parameters to affect the dielectric properties of the device with changing temperature. The device can be used at wide range temperatures for diode applications.

Temperature and Strain Coefficient of Velocity for Langasite SAW Devices

NASA Technical Reports Server (NTRS)

Wilson, W. C.; Atkinson, G. M.

2013-01-01

Surface Acoustic Wave sensors on Langasite substrates are being investigated for aerospace applications. Characterization of the Langasite material properties must be performed before sensors can be installed in research vehicles. The coefficients of velocity for both strain and temperature have been determined. These values have also been used to perform temperature compensation of the strain measurements.

The strain and thermal induced tunable charging phenomenon in low power flexible memory arrays with a gold nanoparticle monolayer

NASA Astrophysics Data System (ADS)

Zhou, Ye; Han, Su-Ting; Xu, Zong-Xiang; Roy, V. A. L.

2013-02-01

The strain and temperature dependent memory effect of organic memory transistors on plastic substrates has been investigated under ambient conditions. The gold (Au) nanoparticle monolayer was prepared and embedded in an atomic layer deposited aluminum oxide (Al2O3) as the charge trapping layer. The devices exhibited low operation voltage, reliable memory characteristics and long data retention time. Experimental analysis of the programming and erasing behavior at various bending states showed the relationship between strain and charging capacity. Thermal-induced effects on these memory devices have also been analyzed. The mobility shows ~200% rise and the memory window increases from 1.48 V to 1.8 V when the temperature rises from 20 °C to 80 °C due to thermally activated transport. The retention capability of the devices decreases with the increased working temperature. Our findings provide a better understanding of flexible organic memory transistors under various operating temperatures and validate their applications in various areas such as temperature sensors, temperature memory or advanced electronic circuits. Furthermore, the low temperature processing procedures of the key elements (Au nanoparticle monolayer and Al2O3 dielectric layer) could be potentially integrated with large area flexible electronics.The strain and temperature dependent memory effect of organic memory transistors on plastic substrates has been investigated under ambient conditions. The gold (Au) nanoparticle monolayer was prepared and embedded in an atomic layer deposited aluminum oxide (Al2O3) as the charge trapping layer. The devices exhibited low operation voltage, reliable memory characteristics and long data retention time. Experimental analysis of the programming and erasing behavior at various bending states showed the relationship between strain and charging capacity. Thermal-induced effects on these memory devices have also been analyzed. The mobility shows ~200% rise and the memory window increases from 1.48 V to 1.8 V when the temperature rises from 20 °C to 80 °C due to thermally activated transport. The retention capability of the devices decreases with the increased working temperature. Our findings provide a better understanding of flexible organic memory transistors under various operating temperatures and validate their applications in various areas such as temperature sensors, temperature memory or advanced electronic circuits. Furthermore, the low temperature processing procedures of the key elements (Au nanoparticle monolayer and Al2O3 dielectric layer) could be potentially integrated with large area flexible electronics. Electronic supplementary information (ESI) available: UV-vis spectrum of Au nanoparticle aqueous solution, transfer characteristics of the transistors without inserting an Au nanoparticle monolayer, AFM image of the pentacene layer, transfer characteristics at different program voltages and memory windows with respect to the P/E voltage. See DOI: 10.1039/c2nr32579a

Performance of Surface-Mount Ceramic and Solid Tantalum Capacitors for Cryogenic Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; MacDonald, Thomas L.; Hammoud, Ahmad; Gerber, Scott

1998-01-01

Low temperature electronics are of great interest for space exploration programs. These include missions to the outer planets, earth-orbiting and deep-space probes, remote-sensing and communication satellites. Terrestrial applications would also benefit from the availability of low temperature electronics. Power components capable of low temperature operation would, thus, enhance the technologies needed for the development of advanced power systems suitable for use in harsh environments. In this work, ceramic and solid tantalum capacitors were evaluated in terms of their dielectric properties as a function of temperature and at various frequencies. The surface-mount devices were characterized in terms of their capacitance stability and dissipation factor in the frequency range of 50 Hz to 100 kHz at temperatures ranging from room temperature (20 deg. C) to about liquid nitrogen temperature (-190 deg. C). The results are discussed and conclusions made concerning the suitability of the capacitors investigated for low temperature applications.

Temperature and field-dependent transport measurements in continuously tunable tantalum oxide memristors expose the dominant state variable

NASA Astrophysics Data System (ADS)

Graves, Catherine E.; Dávila, Noraica; Merced-Grafals, Emmanuelle J.; Lam, Si-Ty; Strachan, John Paul; Williams, R. Stanley

2017-03-01

Applications of memristor devices are quickly moving beyond computer memory to areas of analog and neuromorphic computation. These applications require the design of devices with different characteristics from binary memory, such as a large tunable range of conductance. A complete understanding of the conduction mechanisms and their corresponding state variable(s) is crucial for optimizing performance and designs in these applications. Here we present measurements of low bias I-V characteristics of 6 states in a Ta/ tantalum-oxide (TaOx)/Pt memristor spanning over 2 orders of magnitude in conductance and temperatures from 100 K to 500 K. Our measurements show that the 300 K device conduction is dominated by a temperature-insensitive current that varies with non-volatile memristor state, with an additional leakage contribution from a thermally-activated current channel that is nearly independent of the memristor state. We interpret these results with a parallel conduction model of Mott hopping and Schottky emission channels, fitting the voltage and temperature dependent experimental data for all memristor states with only two free parameters. The memristor conductance is linearly correlated with N, the density of electrons near EF participating in the Mott hopping conduction, revealing N to be the dominant state variable for low bias conduction in this system. Finally, we show that the Mott hopping sites can be ascribed to oxygen vacancies, where the local oxygen vacancy density responsible for critical hopping pathways controls the memristor conductance.

1.54 micron Emission from Erbium implanted GaN for Photonic Applications

NASA Technical Reports Server (NTRS)

Thaik, Myo; Hommerich, U.; Schwartz, R. N.; Wilson, R. G.; Zavada, J. M.

1998-01-01

The development of efficient and compact light sources operating at 1.54 micron is of enormous importance for the advancement of new optical communication systems. Erbium (1%) doped fiber amplifiers (EDFA's) or semiconductor lasers are currently being employed as near infrared light sources. Both devices, however, have inherent limitations due to their mode of operation. EDFA's employ an elaborate optical pumping scheme, whereas diode lasers have a strongly temperature dependent lasing wavelength. Novel light emitters based on erbium doped III-V semiconductors could overcome these limitations. Er doped semiconductors combine the convenience of electrical excitation with the excellent luminescence properties of Er(3+) ions. Electrically pumped, compact, and temperature stable optoelectronic devices are envisioned from this new class of luminescent materials. In this paper we discuss the potential of Er doped GaN for optoelectronic applications based on temperature dependent photoluminescence excitation studies.

Engineering helimagnetism in MnSi thin films

NASA Astrophysics Data System (ADS)

Zhang, S. L.; Chalasani, R.; Baker, A. A.; Steinke, N.-J.; Figueroa, A. I.; Kohn, A.; van der Laan, G.; Hesjedal, T.

2016-01-01

Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ˜18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

Temperature-driven topological quantum phase transitions in a phase-change material Ge2Sb2Te5.

PubMed

Eremeev, S V; Rusinov, I P; Echenique, P M; Chulkov, E V

2016-12-13

The Ge 2 Sb 2 Te 5 is a phase-change material widely used in optical memory devices and is a leading candidate for next generation non-volatile random access memory devices which are key elements of various electronics and portable systems. Despite the compound is under intense investigation its electronic structure is currently not fully understood. The present work sheds new light on the electronic structure of the Ge 2 Sb 2 Te 5 crystalline phases. We demonstrate by predicting from first-principles calculations that stable crystal structures of Ge 2 Sb 2 Te 5 possess different topological quantum phases: a topological insulator phase is realized in low-temperature structure and Weyl semimetal phase is a characteristic of the high-temperature structure. Since the structural phase transitions are caused by the temperature the switching between different topologically non-trivial phases can be driven by variation of the temperature. The obtained results reveal the rich physics of the Ge 2 Sb 2 Te 5 compound and open previously unexplored possibility for spintronics applications of this material, substantially expanding its application potential.

Uncooled infrared photodetectors in Poland

NASA Astrophysics Data System (ADS)

Piotrowski, Jozef; Piotrowski, Adam

2005-09-01

The history and present status of the middle and long wavelength Hg1xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapor phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapor phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. Actually, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1-15 μm and 200-300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models

NASA Astrophysics Data System (ADS)

Pereira, A. S. N.; de Streel, G.; Planes, N.; Haond, M.; Giacomini, R.; Flandre, D.; Kilchytska, V.

2017-02-01

The Drain Induced Barrier Lowering (DIBL) behavior in Ultra-Thin Body and Buried oxide (UTBB) transistors is investigated in details in the temperature range up to 150 °C, for the first time to the best of our knowledge. The analysis is based on experimental data, physical device simulation, compact model (SPICE) simulation and previously published models. Contrary to MASTAR prediction, experiments reveal DIBL increase with temperature. Physical device simulations of different thin-film fully-depleted (FD) devices outline the generality of such behavior. SPICE simulations, with UTSOI DK2.4 model, only partially adhere to experimental trends. Several analytic models available in the literature are assessed for DIBL vs. temperature prediction. Although being the closest to experiments, Fasarakis' model overestimates DIBL(T) dependence for shortest devices and underestimates it for upsized gate lengths frequently used in ultra-low-voltage (ULV) applications. This model is improved in our work, by introducing a temperature-dependent inversion charge at threshold. The improved model shows very good agreement with experimental data, with high gain in precision for the gate lengths under test.

Current Pulses Momentarily Enhance Thermoelectric Cooling

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey; Fleurial, Jean-Pierre; Caillat, Thierry; Chen, Gang; Yang, Rong Gui

2004-01-01

The rates of cooling afforded by thermoelectric (Peltier) devices can be increased for short times by applying pulses of electric current greater than the currents that yield maximum steady-state cooling. It has been proposed to utilize such momentary enhancements of cooling in applications in which diode lasers and other semiconductor devices are required to operate for times of the order of milliseconds at temperatures too low to be easily obtainable in the steady state. In a typical contemplated application, a semiconductor device would be in contact with the final (coldest) somewhat taller stage of a multistage thermoelectric cooler. Steady current would be applied to the stages to produce steady cooling. Pulsed current would then be applied, enhancing the cooling of the top stage momentarily. The principles of operation are straightforward: In a thermoelectric device, the cooling occurs only at a junction at one end of the thermoelectric legs, at a rate proportional to the applied current. However, Joule heating occurs throughout the device at a rate proportional to the current squared. Hence, in the steady state, the steady temperature difference that the device can sustain increases with current only to the point beyond which the Joule heating dominates. If a pulse of current greater than the optimum current (the current for maximum steady cooling) is applied, then the junction becomes momentarily cooled below its lowest steady temperature until thermal conduction brings the resulting pulse of Joule heat to the junction and thereby heats the junction above its lowest steady temperature. A theoretical and experimental study of such transient thermoelectric cooling followed by transient Joule heating in response to current pulses has been performed. The figure presents results from one of the experiments. The study established the essential parameters that characterize the pulse cooling effect, including the minimum temperature achieved, the maximum temperature overshoot, the time to reach minimum temperature, the time while cooled, and the time between pulses. It was found that at large pulse amplitude, the amount of pulse supercooling is about a fourth of the maximum steady-state temperature difference. For the particular thermoelectric device used in one set of the experiments, the practical optimum pulse amplitude was found to be about 3 times the optimum steady-state current. In a further experiment, a pulse cooler was integrated into a small commercial thermoelectric threestage cooler and found to provide several degrees of additional cooling for a time long enough to operate a semiconductor laser in a gas sensor.

Long-Term Stability of Mold Compounds and the Influence on Semiconductor Device Reliability

NASA Astrophysics Data System (ADS)

Mahler, Joachim; Mengel, Manfred

2012-07-01

Lifetimes of semiconductor devices are specified according to the products and their applications to ensure safe operation, for instance as part of an automobile product. The long-term stability of the device is strongly dependent on the chip encapsulation and its adhesion to the chip and substrate. Molded silicon strips that act as a model system for molded chips inside semiconductor devices were investigated. Four commercially available mold compounds were applied on silicon strips and stored over 5 years at room temperature (RT), and changes in the thermomechanical behavior were analyzed. After storage, all molded strips exhibited warpage reduction in the range of 11% to 14% at RT with respect to the initial warpage. The temperatures for the stress-free state also changed during storage and were located between 228°C and 235°C for each mold. Additional stress applied to the stored modules, by temperature cycling as well as high-temperature storage, increased the warpage of the molded silicon samples. For further interpretation of measured results, finite-element method calculations were performed.

A flexible, transparent and high-performance gas sensor based on layer-materials for wearable technology

NASA Astrophysics Data System (ADS)

Zheng, Zhaoqiang; Yao, Jiandong; Wang, Bing; Yang, Guowei

2017-10-01

Gas sensors play a vital role among a wide range of practical applications. Recently, propelled by the development of layered materials, gas sensors have gained much progress. However, the high operation temperature has restricted their further application. Herein, via a facile pulsed laser deposition (PLD) method, we demonstrate a flexible, transparent and high-performance gas sensor made of highly-crystalline indium selenide (In2Se3) film. Under UV-vis-NIR light or even solar energy activation, the constructed gas sensors exhibit superior properties for detecting acetylene (C2H2) gas at room temperature. We attribute these properties to the photo-induced charger transfer mechanism upon C2H2 molecule adsorption. Moreover, no apparent degradation in the device properties is observed even after 100 bending cycles. In addition, we can also fabricate this device on rigid substrates, which is also capable to detect gas molecules at room temperature. These results unambiguously distinguish In2Se3 as a new candidate for future application in monitoring C2H2 gas at room temperature and open up new opportunities for developing next generation full-spectrum activated gas sensors.

A flexible, transparent and high-performance gas sensor based on layer-materials for wearable technology.

PubMed

Zheng, Zhaoqiang; Yao, Jiandong; Wang, Bing; Yang, Guowei

2017-10-13

Gas sensors play a vital role among a wide range of practical applications. Recently, propelled by the development of layered materials, gas sensors have gained much progress. However, the high operation temperature has restricted their further application. Herein, via a facile pulsed laser deposition (PLD) method, we demonstrate a flexible, transparent and high-performance gas sensor made of highly-crystalline indium selenide (In 2 Se 3 ) film. Under UV-vis-NIR light or even solar energy activation, the constructed gas sensors exhibit superior properties for detecting acetylene (C 2 H 2 ) gas at room temperature. We attribute these properties to the photo-induced charger transfer mechanism upon C 2 H 2 molecule adsorption. Moreover, no apparent degradation in the device properties is observed even after 100 bending cycles. In addition, we can also fabricate this device on rigid substrates, which is also capable to detect gas molecules at room temperature. These results unambiguously distinguish In 2 Se 3 as a new candidate for future application in monitoring C 2 H 2 gas at room temperature and open up new opportunities for developing next generation full-spectrum activated gas sensors.

Microcrystalline silicon thin-film transistors for large area electronic applications

NASA Astrophysics Data System (ADS)

Chan, Kah-Yoong; Bunte, Eerke; Knipp, Dietmar; Stiebig, Helmut

2007-11-01

Thin-film transistors (TFTs) based on microcrystalline silicon (µc-Si:H) exhibit high charge carrier mobilities exceeding 35 cm2 V-1 s-1. The devices are fabricated by plasma-enhanced chemical vapor deposition at substrate temperatures below 200 °C. The fabrication process of the µc-Si:H TFTs is similar to the low temperature fabrication of amorphous silicon TFTs. The electrical characteristics of the µc-Si:H-based transistors will be presented. As the device charge carrier mobility of short channel TFTs is limited by the contacts, the influence of the drain and source contacts on the device parameters including the device charge carrier mobility and the device threshold voltage will be discussed. The experimental data will be described by a modified standard transistor model which accounts for the contact effects. Furthermore, the transmission line method was used to extract the device parameters including the contact resistance. The modified standard transistor model and the transmission line method will be compared in terms of the extracted device parameters and contact resistances.

Air-Cooled Heat Exchanger for High-Temperature Power Electronics: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waye, S. K.; Lustbader, J.; Musselman, M.

2015-05-06

This work demonstrates a direct air-cooled heat exchanger strategy for high-temperature power electronic devices with an application specific to automotive traction drive inverters. We present experimental heat dissipation and system pressure curves versus flow rate for baseline and optimized sub-module assemblies containing two ceramic resistance heaters that provide device heat fluxes. The maximum allowable junction temperature was set to 175 deg.C. Results were extrapolated to the inverter scale and combined with balance-of-inverter components to estimate inverter power density and specific power. The results exceeded the goal of 12 kW/L and 12 kW/kg for power density and specific power, respectively.

New materials and techniques for improved mm wave devices

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.

1991-01-01

Current research on microwave and mm wave three terminal semiconductor devices is summarized with particular attention given to the development of the pseudomorphic InGaAs modulation-doped field effect transistor (MODFET). Application of the high-indium-concentration MODFET grown on InP in the temperature range of 120-150 K is also described.

Chemical Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

1993-01-01

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

Measurement of Young's modulus and residual stress of thin SiC layers for MEMS high temperature applications

NASA Astrophysics Data System (ADS)

Pabst, Oliver; Schiffer, Michael; Obermeier, Ernst; Tekin, Tolga; Lang, Klaus Dieter; Ngo, Ha-Duong

2011-06-01

Silicon carbide (SiC) is a promising material for applications in harsh environments. Standard silicon (Si) microelectromechanical systems (MEMS) are limited in operating temperature to temperatures below 130 °C for electronic devices and below 600 °C for mechanical devices. Due to its large bandgap SiC enables MEMS with significantly higher operating temperatures. Furthermore, SiC exhibits high chemical stability and thermal conductivity. Young's modulus and residual stress are important mechanical properties for the design of sophisticated SiC-based MEMS devices. In particular, residual stresses are strongly dependent on the deposition conditions. Literature values for Young's modulus range from 100 to 400 GPa, and residual stresses range from 98 to 486 MPa. In this paper we present our work on investigating Young's modulus and residual stress of SiC films deposited on single crystal bulk silicon using bulge testing. This method is based on measurement of pressure-dependent membrane deflection. Polycrystalline as well as single crystal cubic silicon carbide samples are studied. For the samples tested, average Young's modulus and residual stress measured are 417 GPa and 89 MPa for polycrystalline samples. For single crystal samples, the according values are 388 GPa and 217 MPa. These results compare well with literature values.

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

History and modern applications of nano-composite materials carrying GA/cm2 current density due to a Bose-Einstein Condensate at room temperature produced by Focused Electron Beam Induced Processing for many extraordinary novel technical applications

NASA Astrophysics Data System (ADS)

Koops, Hans W. P.

2015-12-01

The discovery of Focused Electron Beam Induced Processing and early applications of this technology led to the possible use of a novel nanogranular material “Koops-GranMat®” using Pt/C and Au/C material. which carries at room temperature a current density > 50 times the current density which high TC superconductors can carry. The explanation for the characteristics of this novel material is given. This fact allows producing novel products for many applications using Dual Beam system having a gas supply and X.Y.T stream data programming and not using GDSII layout pattern control software. Novel products are possible for energy transportation. -distribution.-switching, photon-detection above 65 meV energy for very efficient energy harvesting, for bright field emission electron sources used for vacuum electronic devices like amplifiers for HF electronics, micro-tubes, 30 GHz to 6 THz switching amplifiers with signal to noise ratio >10(!), THz power sources up to 1 Watt, in combination with miniaturized vacuum pumps, vacuum gauges, IR to THz detectors, EUV- and X-Ray sources. Since focusing electron beam induced deposition works also at low energy, selfcloning multibeam-production machines for field emitter lamps, displays, multi-beam - lithography, - imaging, and - inspection, energy harvesting, and power distribution with switches controlling field-emitter arrays for KA of currents but with < 100 V switching voltage are possible. Finally the replacement of HTC superconductors and its applications by the Koops-GranMat® having Koops-Pairs at room temperature will allow the investigation devices similar to Josephson Junctions and its applications now called QUIDART (Quantum interference devices at Room Temperature). All these possibilities will support a revolution in the optical, electric, power, and electronic technology.

Improvement of High-Temperature Stability of Al₂O₃/Pt/ZnO/Al₂O₃ Film Electrode for SAW Devices by Using Al₂O₃ Barrier Layer.

PubMed

Liu, Xingpeng; Peng, Bin; Zhang, Wanli; Zhu, Jun; Liu, Xingzhao; Wei, Meng

2017-12-01

In order to develop film electrodes for the surface acoustic wave (SAW) devices operating in harsh high-temperature environments, novel Al₂O₃/Pt/ZnO/Al₂O₃ multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE) at 150 °C. The first Al₂O₃ layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La₃Ga₅SiO 14 (LGS) substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al₂O₃/Pt/ZnO/Al₂O₃ electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al₂O₃/Pt/ZnO/Al₂O₃ film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al₂O₃/Pt/ZnO/Al₂O₃ film electrode has great potential for application in high-temperature SAW devices.

A variable conductance gas switch for intermediate temperature operation of liquid He/liquid N2 cryostats

NASA Technical Reports Server (NTRS)

Rayner, J. T.; Chuter, T. C.; Mclean, I. S.; Radostitz, J. V.; Nolt, I. G.

1988-01-01

A technique for establishing a stable intermediate temperature stage in liquid He/liquid N2 double vessel cryostats is described. The tertiary cold stage, which can be tuned to any temperature between 10 and 60 K, is ideal for cooling IR sensors for use in astronomy and physics applications. The device is called a variable-conductance gas switch. It is essentially a small chamber, located between the cold stage and liquid helium cold-face, whose thermal conductance may be controlled by varying the pressure of helium gas within the chamber. A key feature of this device is the large range of temperature control achieved with a very small (less than 10 mW) heat input from the cryogenic temperature control switch.

Temperature Control of Avalanche Photodiode Using Thermoelectric Cooler

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Luck, William S., Jr.; DeYoung, Russell J.

1999-01-01

Avalanche photodiodes (APDS) are quantum optical detectors that are used for visible and near infrared optical detection applications. Although APDs are compact, rugged, and have an internal gain mechanism that is suitable for low light intensity; their responsivity, and therefore their output, is strongly dependent on the device temperature. Thermoelectric coolers (TEC) offers a suitable solution to this problem. A TEC is a solid state cooling device, which can be controlled by changing its current. TECs are compact and rugged, and they can precisely control the temperature to within 0.1 C with more than a 150 C temperature gradient between its surfaces. In this Memorandum, a proportional integral (PI) temperature controller for APDs using a TEC is discussed. The controller is compact and can successfully cool the APD to almost 0 C in an ambient temperature environment of up to 27 C.

Room-temperature nine-µm-wavelength photodetectors and GHz-frequency heterodyne receivers.

PubMed

Palaferri, Daniele; Todorov, Yanko; Bigioli, Azzurra; Mottaghizadeh, Alireza; Gacemi, Djamal; Calabrese, Allegra; Vasanelli, Angela; Li, Lianhe; Davies, A Giles; Linfield, Edmund H; Kapsalidis, Filippos; Beck, Mattias; Faist, Jérôme; Sirtori, Carlo

2018-04-05

Room-temperature operation is essential for any optoelectronics technology that aims to provide low-cost, compact systems for widespread applications. A recent technological advance in this direction is bolometric detection for thermal imaging, which has achieved relatively high sensitivity and video rates (about 60 hertz) at room temperature. However, owing to thermally induced dark current, room-temperature operation is still a great challenge for semiconductor photodetectors targeting the wavelength band between 8 and 12 micrometres, and all relevant applications, such as imaging, environmental remote sensing and laser-based free-space communication, have been realized at low temperatures. For these devices, high sensitivity and high speed have never been compatible with high-temperature operation. Here we show that a long-wavelength (nine micrometres) infrared quantum-well photodetector fabricated from a metamaterial made of sub-wavelength metallic resonators exhibits strongly enhanced performance with respect to the state of the art up to room temperature. This occurs because the photonic collection area of each resonator is much larger than its electrical area, thus substantially reducing the dark current of the device. Furthermore, we show that our photonic architecture overcomes intrinsic limitations of the material, such as the drop of the electronic drift velocity with temperature, which constrains conventional geometries at cryogenic operation. Finally, the reduced physical area of the device and its increased responsivity allow us to take advantage of the intrinsic high-frequency response of the quantum detector at room temperature. By mixing the frequencies of two quantum-cascade lasers on the detector, which acts as a heterodyne receiver, we have measured a high-frequency signal, above four gigahertz (GHz). Therefore, these wide-band uncooled detectors could benefit technologies such as high-speed (gigabits per second) multichannel coherent data transfer and high-precision molecular spectroscopy.

Room-temperature nine-µm-wavelength photodetectors and GHz-frequency heterodyne receivers

NASA Astrophysics Data System (ADS)

Palaferri, Daniele; Todorov, Yanko; Bigioli, Azzurra; Mottaghizadeh, Alireza; Gacemi, Djamal; Calabrese, Allegra; Vasanelli, Angela; Li, Lianhe; Davies, A. Giles; Linfield, Edmund H.; Kapsalidis, Filippos; Beck, Mattias; Faist, Jérôme; Sirtori, Carlo

2018-04-01

Room-temperature operation is essential for any optoelectronics technology that aims to provide low-cost, compact systems for widespread applications. A recent technological advance in this direction is bolometric detection for thermal imaging, which has achieved relatively high sensitivity and video rates (about 60 hertz) at room temperature. However, owing to thermally induced dark current, room-temperature operation is still a great challenge for semiconductor photodetectors targeting the wavelength band between 8 and 12 micrometres, and all relevant applications, such as imaging, environmental remote sensing and laser-based free-space communication, have been realized at low temperatures. For these devices, high sensitivity and high speed have never been compatible with high-temperature operation. Here we show that a long-wavelength (nine micrometres) infrared quantum-well photodetector fabricated from a metamaterial made of sub-wavelength metallic resonators exhibits strongly enhanced performance with respect to the state of the art up to room temperature. This occurs because the photonic collection area of each resonator is much larger than its electrical area, thus substantially reducing the dark current of the device. Furthermore, we show that our photonic architecture overcomes intrinsic limitations of the material, such as the drop of the electronic drift velocity with temperature, which constrains conventional geometries at cryogenic operation. Finally, the reduced physical area of the device and its increased responsivity allow us to take advantage of the intrinsic high-frequency response of the quantum detector at room temperature. By mixing the frequencies of two quantum-cascade lasers on the detector, which acts as a heterodyne receiver, we have measured a high-frequency signal, above four gigahertz (GHz). Therefore, these wide-band uncooled detectors could benefit technologies such as high-speed (gigabits per second) multichannel coherent data transfer and high-precision molecular spectroscopy.

Fibre Optic Temperature Sensors Using Fluorescent Phenomena.

NASA Astrophysics Data System (ADS)

Selli, Raman Kumar

Available from UMI in association with The British Library. A number of fibre optic sensors based on fluorescent phenomena using low cost electronic and optical filtering techniques, for temperature sensing applications are described and discussed. The initial device developed uses the absorption edge change of an optical glass to monitor changes in temperature with a second wavelength reference channel being generated from a fluorescent material, neodymium doped in glass. This device demonstrates the working of the self-referencing principle in a practical device tested over the temperature range of -60^circ C to 200^circC. This initial device was improved by incorporating a microprocessor and by modifying the processing electronic circuitry. An alternative probe was constructed which used a second fibre placed along-side the addressing fibre in contrast to the original device where the fibre is placed at the opposite end of the addressing fibre. A device based on the same principle but with different absorption glasses and a different fluorescent medium, crystalline ruby, was also examined. This device operated at a lower wavelength region compared to the infra -red working region of the first device. This work illustrated the need to make an appropriate choice of sensor absorption glass so that the cheaper indicator type LEDs, which operated at lower wavelengths, may be used. Ruby is a fluorescent material which is characterized by each emission wavelength having its own temperature characteristics. The integrated energy output over the complete emission spectrum is independent of temperature. This provided a means of generating a reference from the complete spectrum while a small frequency band gave a temperature dependent output. This characteristic of ruby was used to develop a temperature measuring device. A final system which utilises the temperature dependent decay-time emission properties of crystalline ruby was developed. In this case the ruby was excited by sinusoidally modulated light. This system employs a single indicator type green LED to excite the ruby sample and a single very sensitive silicon photodiode detector with an integral amplifier for low optical signal detection. Both of these components were inexpensive. The system yielded very high performance levels in terms of precision and resolution which has the potential for commercial exploitation. The different devices developed are compared and contrasted in the light of the commercial instruments on the market and other published data.

Analysis and investigation of temperature and hydrostatic pressure effects on optical characteristics of multiple quantum well slow light devices.

PubMed

Abdolhosseini, Saeed; Kohandani, Reza; Kaatuzian, Hassan

2017-09-10

This paper represents the influences of temperature and hydrostatic pressure variations on GaAs/AlGaAs multiple quantum well slow light systems based on coherence population oscillations. An analytical model in non-integer dimension space is used to study the considerable effects of these parameters on optical properties of the slow light apparatus. Exciton oscillator strength and fractional dimension constants have special roles on the analytical model in fractional dimension. Hence, the impacts of hydrostatic pressure and temperature on exciton oscillator strength and fractional dimension quantity are investigated theoretically in this paper. Based on the achieved results, temperature and hydrostatic pressure play key roles on optical parameters of the slow light systems, such as the slow down factor and central energy of the device. It is found that the slope and value of the refractive index real part change with alterations of temperature and hydrostatic pressure in the range of 5-40 deg of Kelvin and 1 bar to 2 kbar, respectively. Thus, the peak value of the slow down factor can be adjusted by altering these parameters. Moreover, the central energy of the device shifts when the hydrostatic pressure is applied to the slow light device or temperature is varied. In comparison with previous reported experimental results, our simulations follow them successfully. It is shown that the maximum value of the slow down factor is estimated close to 5.5×10 4 with a fine adjustment of temperature and hydrostatic pressure. Meanwhile, the central energy shift of the slow light device rises up to 27 meV, which provides an appropriate basis for different optical devices in which multiple quantum well slow light is one of their essential subsections. This multiple quantum well slow light device has potential applications for use as a tunable optical buffer and pressure/temperature sensors.

Low-noise current amplifier based on mesoscopic Josephson junction.

PubMed

Delahaye, J; Hassel, J; Lindell, R; Sillanpää, M; Paalanen, M; Seppä, H; Hakonen, P

2003-02-14

We used the band structure of a mesoscopic Josephson junction to construct low-noise amplifiers. By taking advantage of the quantum dynamics of a Josephson junction, i.e., the interplay of interlevel transitions and the Coulomb blockade of Cooper pairs, we created transistor-like devices, Bloch oscillating transistors, with considerable current gain and high-input impedance. In these transistors, the correlated supercurrent of Cooper pairs is controlled by a small base current made up of single electrons. Our devices reached current and power gains on the order of 30 and 5, respectively. The noise temperature was estimated to be around 1 kelvin, but noise temperatures of less than 0.1 kelvin can be realistically achieved. These devices provide quantum-electronic building blocks that will be useful at low temperatures in low-noise circuit applications with an intermediate impedance level.

Effect of Discontinuities and Penetrations on the Shielding Efficacy of High Temperature Superconducting Magnetic Shields

NASA Astrophysics Data System (ADS)

Hatwar, R.; Kvitkovic, J.; Herman, C.; Pamidi, S.

2015-12-01

High Temperature Superconducting (HTS) materials have been demonstrated to be suitable for applications in shielding of both DC and AC magnetic fields. Magnetic shielding is required for protecting sensitive instrumentation from external magnetic fields and for preventing the stray magnetic fields produced by high power density equipment from affecting neighbouring devices. HTS shields have high current densities at relatively high operating temperatures (40-77 K) and can be easily fabricated using commercial HTS conductor. High current densities in HTS materials allow design and fabrication of magnetic shields that are lighter and can be incorporated into the body and skin of high power density devices. HTS shields are particularly attractive for HTS devices because a single cryogenic system can be used for cooling the device and the associated shield. Typical power devices need penetrations for power and signal cabling and the penetrations create discontinuities in HTS shields. Hence it is important to assess the effect of the necessary discontinuities on the efficacy of the shields and the design modifications necessary to accommodate the penetrations.

Further miniaturisation of the Thermochron iButton to create a thermal bio-logger weighing 0.3 g.

PubMed

Virens, Josef; Cree, Alison

2018-06-05

Thermochron iButtons are commonly used by thermal biologists to continuously measure body temperature from animals. However, if unmodified, these devices are of a size that limits their use with very small animals. To allow iButtons to be used to study smaller species, methods to miniaturise them by 61% have been previously described. We present a method to reduce iButton mass by a further 71%. The modified devices have a shorter battery life, but the minimum size of vertebrates able to carry the devices is reduced from 28.9 g to 6.6 g, if the arbitrary, yet widely cited, maximum of 5% body mass for attached devices is adhered to. We demonstrate the application of our method by recording surface temperatures of captive and wild skinks and show that captive cockroaches weighing 0.8 g are also able to carry the device. We believe this to be the first time that temperature data have been recorded from an insect in this way. © 2018. Published by The Company of Biologists Ltd.

Infrared negative luminescent devices and higher operating temperature detectors

NASA Astrophysics Data System (ADS)

Nash, G. R.; Gordon, N. T.; Hall, D. J.; Ashby, M. K.; Little, J. C.; Masterton, G.; Hails, J. E.; Giess, J.; Haworth, L.; Emeny, M. T.; Ashley, T.

2004-01-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source’ of IR radiation for gas sensing; radiation shielding for, and non-uniformity correction of, high sensitivity staring infrared detectors; and dynamic infrared scene projection. Similarly, infrared (IR) detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We present results on negative luminescence in the mid- and long-IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1 cm×1 cm. We also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very high-performance imaging is anticipated from systems which require no mechanical cooling.

Infrared negative luminescent devices and higher operating temperature detectors

NASA Astrophysics Data System (ADS)

Nash, Geoff R.; Gordon, Neil T.; Hall, David J.; Little, J. Chris; Masterton, G.; Hails, J. E.; Giess, J.; Haworth, L.; Emeny, Martin T.; Ashley, Tim

2004-02-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source" of IR radiation for gas sensing; radiation shielding for and non-uniformity correction of high sensitivity starring infrared detectors; and dynamic infrared scene projection. Similarly, IR detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We will present results on negative luminescence in the mid and long IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1cm x 1cm. We will also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very higher performance imaging is anticipated from systems which require no mechanical cooling.

Infrared Negative Luminescent Devices and Higher Operating Temperature Detectors

NASA Astrophysics Data System (ADS)

Ashley, Tim

2003-03-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a source' of IR radiation for gas sensing; radiation shielding for and non-uniformity correction of high sensitivity starring infrared detectors; and dynamic infrared scene projection. Similarly, IR detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We will present results on negative luminescence in the mid and long IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1cm x 1cm. We will also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very high performance imaging is anticipated from systems which require no mechanical cooling.

Clinical applications of plasma based electrosurgical systems

NASA Astrophysics Data System (ADS)

Woloszko, Jean; Endler, Ashley; Ryan, Thomas P.; Stalder, Kenneth R.

2013-02-01

Over the past 18 years, several electrosurgical systems generating a low temperature plasma in an aqueous conductive solution have been commercialized for various clinical applications and have been used in over 10 million patients to date. The most popular utilizations are in arthroscopic surgery, otorhinolaryngology surgery, spine and neurosurgery, urology and wound care. These devices can be configured to bring saline to the tip and to have concomitant aspiration to remove by-products and excess fluid. By tuning the electrode geometry, waveform and fluid dynamic at the tip of the devices, tissue resection and thermal effects can be adjusted individually. This allows one to design products that can operate as precise tissue dissectors for treatment of articular cartilage or debridement of chronic wounds, as well as global tissue debulking devices providing sufficient concomitant hemostasis for applications like tonsillectomies. Effects of these plasma based electrosurgical devices on cellular biology, healing response and nociceptive receptors has also been studied in various models. This talk will include a review of the clinical applications, with product descriptions, results and introductory review of some of the research on the biological effects of these devices.

Fabrication of a microfluidic chip by UV bonding at room temperature for integration of temperature-sensitive layers

NASA Astrophysics Data System (ADS)

Schlautmann, S.; Besselink, G. A. J.; Radhakrishna Prabhu, G.; Schasfoort, R. B. M.

2003-07-01

A method for the bonding of a microfluidic device at room temperature is presented. The wafer with the fluidic structures was bonded to a sensor wafer with gold pads by means of adhesive bonding, utilizing an UV-curable glue layer. To avoid filling the fluidic channels with the glue, a stamping process was developed which allows the selective application of a thin glue layer. In this way a microfluidic glass chip was fabricated that could be used for performing surface plasmon resonance measurements without signs of leakage. The advantage of this method is the possibility of integration of organic layers as well as other temperature-sensitive layers into a microfluidic glass device.

Real-Time Two-Dimensional Mapping of Relative Local Surface Temperatures with a Thin-Film Sensor Array

PubMed Central

Li, Gang; Wang, Zhenhai; Mao, Xinyu; Zhang, Yinghuang; Huo, Xiaoye; Liu, Haixiao; Xu, Shengyong

2016-01-01

Dynamic mapping of an object’s local temperature distribution may offer valuable information for failure analysis, system control and improvement. In this letter we present a computerized measurement system which is equipped with a hybrid, low-noise mechanical-electrical multiplexer for real-time two-dimensional (2D) mapping of surface temperatures. We demonstrate the performance of the system on a device embedded with 32 pieces of built-in Cr-Pt thin-film thermocouples arranged in a 4 × 8 matrix. The system can display a continuous 2D mapping movie of relative temperatures with a time interval around 1 s. This technique may find applications in a variety of practical devices and systems. PMID:27347969

Quantitative Accelerated Life Testing of MEMS Accelerometers

PubMed Central

Bâzu, Marius; Gălăţeanu, Lucian; Ilian, Virgil Emil; Loicq, Jerome; Habraken, Serge; Collette, Jean-Paul

2007-01-01

Quantitative Accelerated Life Testing (QALT) is a solution for assessing the reliability of Micro Electro Mechanical Systems (MEMS). A procedure for QALT is shown in this paper and an attempt to assess the reliability level for a batch of MEMS accelerometers is reported. The testing plan is application-driven and contains combined tests: thermal (high temperature) and mechanical stress. Two variants of mechanical stress are used: vibration (at a fixed frequency) and tilting. Original equipment for testing at tilting and high temperature is used. Tilting is appropriate as application-driven stress, because the tilt movement is a natural environment for devices used for automotive and aerospace applications. Also, tilting is used by MEMS accelerometers for anti-theft systems. The test results demonstrated the excellent reliability of the studied devices, the failure rate in the “worst case” being smaller than 10-7h-1. PMID:28903265

Thermoelectricity for future sustainable energy technologies

NASA Astrophysics Data System (ADS)

Weidenkaff, Anke

2017-07-01

Thermoelectricity is a general term for a number of effects describing the direct interconversion of heat and electricity. Thermoelectric devices are therefore promising, environmental-friendly alternatives to conventional power generators or cooling units. Since the mid-90s, research on thermoelectric properties and their applications has steadily increased. In the course of years, the development of high-temperature resistant TE materials and devices has emerged as one of the main areas of interest focusing both on basic research and practical applications. A wide range of innovative and cost-efficient material classes has been studied and their properties improved. This has also led to advances in synthesis and metrology. The paper starts out with thermoelectric history, basic effects underlying thermoelectric conversion and selected examples of application. The main part focuses on thermoelectric materials including an outline of the design rules, a review on the most common materials and the feasibility of improved future high-temperature thermoelectric converters.

Low-Temperature Power Electronics Program

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Dickman, John E.; Hammoud, Ahmad; Gerber, Scott

1997-01-01

Many space and some terrestrial applications would benefit from the availability of low-temperature electronics. Exploration missions to the outer planets, Earth-orbiting and deep-space probes, and communications satellites are examples of space applications which operate in low-temperature environments. Space probes deployed near Pluto must operate in temperatures as low as -229 C. Figure 1 depicts the average temperature of a space probe warmed by the sun for various locations throughout the solar system. Terrestrial applications where components and systems must operate in low-temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation system, and arctic exploration. The development of electrical power systems capable of extremely low-temperature operation represents a key element of some advanced space power systems. The Low-Temperature Power Electronics Program at NASA Lewis Research Center focuses on the design, fabrication, and characterization of low-temperature power systems and the development of supporting technologies for low-temperature operations such as dielectric and insulating materials, power components, optoelectronic components, and packaging and integration of devices, components, and systems.

An 11 cm long atmospheric pressure cold plasma plume for applications of plasma medicine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu Xinpei; Jiang Zhonghe; Xiong Qing

2008-02-25

In this letter, a room temperature atmospheric pressure plasma jet device is reported. The high voltage electrode of the device is covered by a quartz tube with one end closed. The device, which is driven by a kilohertz ac power supply, is capable of generating a plasma plume up to 11 cm long in the surrounding room air. The rotational and vibrational temperatures of the plasma plume are 300 and 2300 K, respectively. A simple electrical model shows that, when the plasma plume is contacted with a human, the voltage drop on the human is less than 66 V formore » applied voltage of 5 kV (rms)« less

High thermal stability fluorene-based hole-injecting material for organic light-emitting devices

NASA Astrophysics Data System (ADS)

Li, Lu; Jiao, Bo; Li, Sanfeng; Ma, Lin; Yu, Yue; Wu, Zhaoxin

2016-03-01

Novel N1,N3,N5-tris(9,9-diphenyl-9H-fluroen-2-yl)-N1,N3,N5-triphenylbenzene-1,3,5-triamine (TFADB) was synthesized and characterized as a hole-injecting material (HIM) for organic light-emitting devices (OLEDs). By incorporating fluorene group TFADB shows a high glass-transition temperature Tg > 168 °C, indicative of excellent thermal stability. TFADB-based devices exhibited the highest performance in terms of the maximum current efficiency (6.0 cd/A), maximum power efficiency (4.0 lm/W), which is improved than that of the standard device based on 4-4‧-4″Tris(N-(naphthalene-2-yl)-N-phenyl-amino)triphenylamine (2T-NATA) (5.2 cd/A, 3.6 lm/W). This material could be a promising hole-injecting material, especially for the high temperature applications of OLEDs and other organic electronic devices.

Room-temperature ballistic transport in III-nitride heterostructures.

PubMed

Matioli, Elison; Palacios, Tomás

2015-02-11

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the short electron mean-free-path at RT requires nanoscale devices for which surface effects are a limitation in these materials. We explore the unique properties of wide band-gap III-nitride semiconductors to demonstrate RT ballistic devices. A theoretical model is proposed to corroborate experimentally their optical phonon energy of 92 meV, which is ∼4× larger than in other III-V semiconductors. This allows RT ballistic devices operating at larger voltages and currents. An additional model is described to determine experimentally a characteristic dimension for ballistic transport of 188 nm. Another remarkable property is their short carrier depletion at device sidewalls, down to 13 nm, which allows top-down nanofabrication of very narrow ballistic devices. These results open a wealth of new systems and basic transport studies possible at RT.

Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

DOE PAGES

Coltrin, Michael E.; Baca, Albert G.; Kaplar, Robert J.

2017-10-26

In this paper, predicted lateral power device performance as a function of alloy composition is characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility, critical electric field, and sheet carrier density. The paper presents calculations of AlGaN electron mobility in lateral devices such as HEMTs across the entire alloy composition range. Alloy scattering and optical polar phonon scattering are the dominant mechanisms limiting carrier mobility. Due to the significant degradation of mobility from alloy scattering, at room temperature Al fractions greater than about 85% are required for improved LFOM relative to GaN using a conservative sheet chargemore » density of 1 × 10 13 cm –2. However, at higher temperatures at which AlGaN power devices are anticipated to operate, this “breakeven” composition decreases to about 65% at 500 K, for example. For high-frequency applications, the Johnson figure-of-merit (JFOM) is the relevant metric to compare potential device performance across materials platforms. At room temperature, the JFOM for AlGaN alloys is predicted to surpass that of GaN for Al fractions greater than about 40%.« less

Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coltrin, Michael E.; Baca, Albert G.; Kaplar, Robert J.

In this paper, predicted lateral power device performance as a function of alloy composition is characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility, critical electric field, and sheet carrier density. The paper presents calculations of AlGaN electron mobility in lateral devices such as HEMTs across the entire alloy composition range. Alloy scattering and optical polar phonon scattering are the dominant mechanisms limiting carrier mobility. Due to the significant degradation of mobility from alloy scattering, at room temperature Al fractions greater than about 85% are required for improved LFOM relative to GaN using a conservative sheet chargemore » density of 1 × 10 13 cm –2. However, at higher temperatures at which AlGaN power devices are anticipated to operate, this “breakeven” composition decreases to about 65% at 500 K, for example. For high-frequency applications, the Johnson figure-of-merit (JFOM) is the relevant metric to compare potential device performance across materials platforms. At room temperature, the JFOM for AlGaN alloys is predicted to surpass that of GaN for Al fractions greater than about 40%.« less

An On-Site Thermoelectric Cooling Device for Cryotherapy and Control of Skin Blood Flow

PubMed Central

Mejia, Natalia; Dedow, Karl; Nguy, Lindsey; Sullivan, Patrick; Khoshnevis, Sepideh; Diller, Kenneth R.

2015-01-01

Cryotherapy involves the surface application of low temperatures to enhance the healing of soft tissue injuries. Typical devices embody a remote source of chilled water that is pumped through a circulation bladder placed on the treatment site. In contrast, the present device uses thermoelectric refrigeration modules to bring the cooling source directly to the tissue to be treated, thereby achieving significant improvements in control of therapeutic temperature while having a reduced size and weight. A prototype system was applied to test an oscillating cooling and heating protocol for efficacy in regulating skin blood perfusion in the treatment area. Data on 12 human subjects indicate that thermoelectric coolers (TECs) delivered significant and sustainable changes in perfusion for both heating (increase by (±SE) 173.0 ± 66.0%, P < 0.005) and cooling (decrease by (±SE) 57.7 ± 4.2%, P < 0.0005), thus supporting the feasibility of a TEC-based device for cryotherapy with local temperature regulation. PMID:26421089

High-temperature superconducting superconductor/normal metal/superconducting devices

NASA Technical Reports Server (NTRS)

Foote, M. C.; Hunt, B. D.; Bajuk, L. J.

1991-01-01

We describe the fabrication and characterization of superconductor/normal metal/superconductor (SNS) devices made with the high-temperature superconductor (HTS) YBa2Cu3O(7-x). Structures of YBa2Cu3O(7-x)/Au/Nb on c-axis-oriented YBa2Cu3O(7-x) were made in both sandwich and edge geometries in order to sample the HTS material both along and perpendicular to the conducting a-b planes. These devices display fairly ideal Josephson properties at 4.2 K. In addition, devices consisting of YBa2Cu3O(7-x)/YBa2Cu3O(y)/YBa2Cu3O(7-x), with a 'normal metal' layer of reduced transition temperature YBa2Cu3O(7-x) were fabricated and show a great deal of promise for applications near 77 K. Current-voltage characteristics like those of the Resistively-Shunted Junction model are observed, with strong response to 10 GHz radiation above 60 K.

Modified laser-annealing process for improving the quality of electrical P-N junctions and devices

DOEpatents

Wood, Richard F.; Young, Rosa T.

1984-01-01

The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor material having a doped surface layer, (2) irradiating the layer with at least one laser pulse to effect melting of the layer, (3) permitting recrystallization of the melted layer, and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open-circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole at a selected elevated temperature, the temperature being selected to effect a reduction in the rate of the recrystallization but insufficient to effect substantial migration of impurities within the body. In the case of doped silicon substrates, the substrate may be heated to a temperature in the range of from about 200.degree. C. to 500.degree. C.

An On-Site Thermoelectric Cooling Device for Cryotherapy and Control of Skin Blood Flow.

PubMed

Mejia, Natalia; Dedow, Karl; Nguy, Lindsey; Sullivan, Patrick; Khoshnevis, Sepideh; Diller, Kenneth R

2015-12-01

Cryotherapy involves the surface application of low temperatures to enhance the healing of soft tissue injuries. Typical devices embody a remote source of chilled water that is pumped through a circulation bladder placed on the treatment site. In contrast, the present device uses thermoelectric refrigeration modules to bring the cooling source directly to the tissue to be treated, thereby achieving significant improvements in control of therapeutic temperature while having a reduced size and weight. A prototype system was applied to test an oscillating cooling and heating protocol for efficacy in regulating skin blood perfusion in the treatment area. Data on 12 human subjects indicate that thermoelectric coolers (TECs) delivered significant and sustainable changes in perfusion for both heating (increase by (±SE) 173.0 ± 66.0%, P < 0.005) and cooling (decrease by (±SE) 57.7 ± 4.2%, P < 0.0005), thus supporting the feasibility of a TEC-based device for cryotherapy with local temperature regulation.

Temperature-Controlled Chameleonlike Cloak

NASA Astrophysics Data System (ADS)

Peng, Ruiguang; Xiao, Zongqi; Zhao, Qian; Zhang, Fuli; Meng, Yonggang; Li, Bo; Zhou, Ji; Fan, Yuancheng; Zhang, Peng; Shen, Nian-Hai; Koschny, Thomas; Soukoulis, Costas M.

2017-01-01

Invisibility cloaking based on transformation optics has brought about unlimited space for reverie. However, the design and fabrication of transformation-optics-based cloaks still remain fairly challenging because of the complicated, even extreme, material prescriptions, including its meticulously engineered anisotropy, inhomogeneity and singularity. And almost all the state-of-the-art cloaking devices work within a narrow and invariable frequency band. Here, we propose a novel mechanism for all-dielectric temperature-controllable cloaks. A prototype device was designed and fabricated with SrTiO3 ferroelectric cuboids as building blocks, and its cloaking effects were successfully demonstrated, including its frequency-agile invisibility by varying temperature. It revealed that the predesignated cloaking device based on our proposed strategy could be directly scaled in dimensions to operate at different frequency regions, without the necessity for further efforts of redesign. Our work opens the door towards the realization of tunable cloaking devices for various practical applications and provides a simple strategy to readily extend the cloaking band from microwave to terahertz regimes without the need for reconfiguration.

Microprocessor controlled compliance monitor for eye drop medication.

PubMed

Hermann, M M; Diestelhorst, M

2006-07-01

The effectiveness of a self administered eye drop medication can only be assessed if the compliance is known. The authors studied the specificity and sensitivity of a new microprocessor controlled monitoring device. The monitoring system was conducted by an 8 bit microcontroller for data acquisition and storage with sensors measuring applied pressure to the bottle, temperature, and vertical position. 10 devices were mounted under commercial 10 ml eye drops. Test subjects had to note down each application manually. A total of 15 applications each within 3 days was intended. Manual reports confirmed 15 applications for each of the 10 bottles. The monitoring devices detected a total of 149 events; one was missed; comprising a sensitivity of 99%. Two devices registered three applications, which did not appear in the manual protocols, indicating a specificity of about 98%. Refrigerated bottles were correctly identified. The battery lifetime exceeded 60 days. The new monitoring device demonstrated a high reliability of the collected compliance data. The important, yet often unknown, influence of compliance in patient care and clinical trials shall be illuminated by the new device. This may lead to a better adapted patient care. Studies will profit from a higher credibility and results will be less influenced by non-compliance.

Ceramic Fiber Structures for Cryogenic Load-Bearing Applications

NASA Technical Reports Server (NTRS)

Jaskowiak, Martha H.; Eckel, Andrew J.

2009-01-01

This invention is intended for use as a load-bearing device under cryogenic temperatures and/or abrasive conditions (i.e., during missions to the Moon). The innovation consists of small-diameter, ceramic fibers that are woven or braided into devices like ropes, belts, tracks, or cables. The fibers can be formed from a variety of ceramic materials like silicon carbide, carbon, aluminosilicate, or aluminum oxide. The fiber architecture of the weave or braid is determined by both the fiber properties and the mechanical requirements of the application. A variety of weave or braid architectures is possible for this application. Thickness of load-bearing devices can be achieved by using either a 3D woven structure, or a layered, 2D structure. For the prototype device, a belt approximately 0.10 in. (0.25 cm) thick, and 3.0 in. (7.6 cm) wide was formed by layering and stitching a 2D aluminosilicate fiber weave.

Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.

PubMed

Bagnall, Kevin R; Moore, Elizabeth A; Badescu, Stefan C; Zhang, Lenan; Wang, Evelyn N

2017-11-01

As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E 2 (high), A 1 longitudinal optical (LO), and E 2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to demonstrate its viability, this technique is applicable to any solid-state material with a suitable Raman response and will likely enable new measurement capabilities in a wide variety of scientific and engineering applications.

Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy

NASA Astrophysics Data System (ADS)

Bagnall, Kevin R.; Moore, Elizabeth A.; Badescu, Stefan C.; Zhang, Lenan; Wang, Evelyn N.

2017-11-01

As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E2 (high), A1 longitudinal optical (LO), and E2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to demonstrate its viability, this technique is applicable to any solid-state material with a suitable Raman response and will likely enable new measurement capabilities in a wide variety of scientific and engineering applications.

A thermophone on porous polymeric substrate

NASA Astrophysics Data System (ADS)

Chitnis, G.; Kim, A.; Song, S. H.; Jessop, A. M.; Bolton, J. S.; Ziaie, B.

2012-07-01

In this Letter, we present a simple, low-temperature method for fabricating a wide-band (>80 kHz) thermo-acoustic sound generator on a porous polymeric substrate. We were able to achieve up to 80 dB of sound pressure level with an input power of 0.511 W. No significant surface temperature increase was observed in the device even at an input power level of 2.5 W. Wide-band ultrasonic performance, simplicity of structure, and scalability of the fabrication process make this device suitable for many ranging and imaging applications.

Silicide/Silicon Hetero-Junction Structure for Thermoelectric Applications.

PubMed

Jun, Dongsuk; Kim, Soojung; Choi, Wonchul; Kim, Junsoo; Zyung, Taehyoung; Jang, Moongyu

2015-10-01

We fabricated silicide/silicon hetero-junction structured thermoelectric device by CMOS process for the reduction of thermal conductivity with the scatterings of phonons at silicide/silicon interfaces. Electrical conductivities, Seebeck coefficients, power factors, and temperature differences are evaluated using the steady state analysis method. Platinum silicide/silicon multilayered structure showed an enhanced Seebeck coefficient and power factor characteristics, which was considered for p-leg element. Also, erbium silicide/silicon structure showed an enhanced Seebeck coefficient, which was considered for an n-leg element. Silicide/silicon multilayered structure is promising for thermoelectric applications by reducing thermal conductivity with an enhanced Seebeck coefficient. However, because of the high thermal conductivity of the silicon packing during thermal gradient is not a problem any temperature difference. Therefore, requires more testing and analysis in order to overcome this problem. Thermoelectric generators are devices that based on the Seebeck effect, convert temperature differences into electrical energy. Although thermoelectric phenomena have been used for heating and cooling applications quite extensively, it is only in recent years that interest has increased in energy generation.

Oximetry: a new non-invasive method to detect metabolic effects induced by a local application of mechanical vibration

NASA Astrophysics Data System (ADS)

Felici, A.; Trombetta, C.; Abundo, P.; Foti, C.; Rosato, N.

2012-10-01

Mechanical vibrations application is increasingly common in clinical practice due to the effectiveness induced by these stimuli on the human body. Local vibration (LV) application allows to apply and act only where needed, focusing the treatment on the selected body segment. An experimental device for LV application was used to generate the vibrations. The aim of this study was to detect and analyze the metabolic effects induced by LV on the brachial bicep muscle by means of an oximeter. This device monitors tissue and muscle oxygenation using NIRS (Near Infrared Spectroscopy) and is able to determine the concentration of haemoglobin and oxygen saturation in the tissue. In a preliminary stage we also investigated the effects induced by LV application, by measuring blood pressure, heart rate, oxygen saturation and temperature. These data confirmed that the effects induced by LV application are actually localized. The results of the measurements obtained using the oximeter during the vibration application, have shown a variation of the concentrations. In particular an increase of oxygenate haemoglobin was shown, probably caused by an increased muscle activity and/or a rise in local temperature detected during the application.

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

NASA Technical Reports Server (NTRS)

1996-01-01

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Properties of piezoresistive silicon nano-scale cantilevers with applications to BioNEMS

NASA Astrophysics Data System (ADS)

Arlett, Jessica Lynn

Over the last decade a great deal of interest has been raised in applications of Microelectromechanical Sensors [MEMS] for the detection of biological molecules and to the study of their forces of interaction. Experiments in these areas have included Force Spectroscopy (Chemical Force Microscopy), MEMS patch clamp technology, and surface stress sensors. All of these technologies suffer from limitations on temporal response and involve devices with active surface areas that are large compared to molecular dimensions. Biofunctionalized nanoelectromechanical systems (BioNEMS) have the potential to overcome both of these hurdles, offering important new prospects for single-molecule force assays that are amenable to large scale integration. Results are presented here on the characterization of piezoresistive silicon cantilevers with applications to BioNEMS devices. The cantilevers were characterized by studying their response in gaseous ambients under a number of drive conditions including magnetic, piezoelectric, and thermal actuation, in addition to passive detection of the thermomechanical response. The measurements were performed at liquid helium temperature, at room temperature, and over a range of pressures (atmospheric pressure to 30mT). Theoretical studies have been performed on the response of these devices to Brownian fluctuations in fluid, on the feasibility of these devices as surface stress sensors, and on improvements in device design as compared to piezoresistive surface stress sensors currently discussed in the literature. The devices were encapsulated in microfluidics and measurements were performed to show the noise floor in fluid. The piezoresistive response of the device in fluid was shown through the use of pulsatory fluidic drive. As a proof of concept, biodetection experiments are presented for biotin labeled beads. The biofunctionalization for the latter experiment was performed entirely within the microfluidics. A discussion of how these experiments can be extended to other cells, spores, and molecules is presented.

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

2004-01-01

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Decreasing the Effective Thermal Conductivity in Glass Supported Thermoelectric Layers.

PubMed

Bethke, Kevin; Andrei, Virgil; Rademann, Klaus

2016-01-01

As thermoelectric devices begin to make their way into commercial applications, the emphasis is put on decreasing the thermal conductivity. In this purely theoretical study, finite element analysis is used to determine the effect of a supporting material on the thermal conductivity of a thermoelectric module. The simulations illustrate the heat transfer along a sample, consisting from Cu, Cu2O and PbTe thermoelectric layers on a 1 mm thick Pyrex glass substrate. The influence of two different types of heating, at a constant temperature and at a constant heat flux, is also investigated. It is revealed that the presence of a supporting material plays an important role on lowering the effective thermal conductivity of the layer-substrate ensemble. By using thinner thermoelectric layers the effective thermal conductivity is further reduced, almost down to the value of the glass substrate. As a result, the temperature gradient becomes steeper for a fixed heating temperature, which allows the production of devices with improved performance under certain conditions. Based on the simulation results, we also propose a model for a robust thin film thermoelectric device. With this suggestion, we invite the thermoelectric community to prove the applicability of the presented concept for practical purposes.

Decreasing the Effective Thermal Conductivity in Glass Supported Thermoelectric Layers

PubMed Central

Bethke, Kevin; Andrei, Virgil; Rademann, Klaus

2016-01-01

As thermoelectric devices begin to make their way into commercial applications, the emphasis is put on decreasing the thermal conductivity. In this purely theoretical study, finite element analysis is used to determine the effect of a supporting material on the thermal conductivity of a thermoelectric module. The simulations illustrate the heat transfer along a sample, consisting from Cu, Cu2O and PbTe thermoelectric layers on a 1 mm thick Pyrex glass substrate. The influence of two different types of heating, at a constant temperature and at a constant heat flux, is also investigated. It is revealed that the presence of a supporting material plays an important role on lowering the effective thermal conductivity of the layer-substrate ensemble. By using thinner thermoelectric layers the effective thermal conductivity is further reduced, almost down to the value of the glass substrate. As a result, the temperature gradient becomes steeper for a fixed heating temperature, which allows the production of devices with improved performance under certain conditions. Based on the simulation results, we also propose a model for a robust thin film thermoelectric device. With this suggestion, we invite the thermoelectric community to prove the applicability of the presented concept for practical purposes. PMID:26982458

Platinum metallization for MEMS application

PubMed Central

Guarnieri, Vittorio; Biazi, Leonardo; Marchiori, Roberto; Lago, Alexandre

2014-01-01

The adherence of Platinum thin film on Si/SiO2 wafer was studies using Chromium, Titanium or Alumina (Cr, Ti, Al2O3) as interlayer. The adhesion of Pt is a fundamental property in different areas, for example in MEMS devices, which operate at high temperature conditions, as well as in biomedical applications, where the problem of adhesion of a Pt film to the substrate is known as a major challenge in several industrial applications health and in biomedical devices, such as for example in the stents.1-4 We investigated the properties of Chromium, Titanium, and Alumina (Cr, Ti, and Al2O3) used as adhesion layers of Platinum (Pt) electrode. Thin films of Chromium, Titanium and Alumina were deposited on Silicon/Silicon dioxide (Si/SiO2) wafer by electron beam. We introduced Al2O3 as a new adhesion layer to test the behavior of the Pt film at higher temperature using a ceramic adhesion thin film. Electric behaviors were measured for different annealing temperatures to know the performance for Cr/Pt, Ti/Pt, and Al2O3/Pt metallic film in the gas sensor application. All these metal layers showed a good adhesion onto Si/SiO2 and also good Au wire bondability at room temperature, but for higher temperature than 400 °C the thin Cr/Pt and Ti/Pt films showed poor adhesion due to the atomic inter-diffusion between Platinum and the metal adhesion layers.5 The proposed Al2O3/Pt ceramic-metal layers confirmed a better adherence for the higher temperatures tested. PMID:24743057

Minimization of thermal impact by application of electrode cooling in a co-linear PEF treatment chamber.

PubMed

Meneses, Nicolas; Jaeger, Henry; Knorr, Dietrich

2011-10-01

A co-linear pulsed electric field (PEF) treatment chamber was analyzed and optimized considering electrical process conditions, temperature, and retention of heat-sensitive compounds during a continuous PEF treatment of peach juice. The applicability of a jacket heat-exchanger device surrounding the ground electrode was studied in order to provide active cooling and to avoid temperature peaks within the treatment chamber thus reducing the total thermal load to which the product is exposed. Simulation of the PEF process was performed using a finite element method prior to experimental verification. Inactivation of polyphenoloxydase (PPO) and peroxidase (POD) as well as the degradation of ascorbic acid (AA) in peach juice was quantified and used as indirect indicators for the temperature distribution. Peaks of product temperature within the treatment chamber were reduced, that is, from 98 to 75 °C and retention of the indicators PPO, POD, and AA increased by more than 10% after application of the active electrode cooling device. Practical Application:  The co-linear PEF treatment chamber is widely used for continuous PEF treatment of liquid products and also suitable for industrial scale application; however, Joule heating in combination with nonuniform electric field distribution may lead to unwanted thermal effects. The proposed design showed potential to reduce the thermal load, to which the food is exposed, allowing the retention of heat-sensitive components. The design is applicable at laboratory or industrial scale to perform PEF trials avoiding temperature peaks, which is also the basis for obtaining inactivation kinetic models with minimized thermal impact on the kinetic variables. © 2011 Institute of Food Technologists®

High temperature electrical energy storage: advances, challenges, and frontiers.

PubMed

Lin, Xinrong; Salari, Maryam; Arava, Leela Mohana Reddy; Ajayan, Pulickel M; Grinstaff, Mark W

2016-10-24

With the ongoing global effort to reduce greenhouse gas emission and dependence on oil, electrical energy storage (EES) devices such as Li-ion batteries and supercapacitors have become ubiquitous. Today, EES devices are entering the broader energy use arena and playing key roles in energy storage, transfer, and delivery within, for example, electric vehicles, large-scale grid storage, and sensors located in harsh environmental conditions, where performance at temperatures greater than 25 °C are required. The safety and high temperature durability are as critical or more so than other essential characteristics (e.g., capacity, energy and power density) for safe power output and long lifespan. Consequently, significant efforts are underway to design, fabricate, and evaluate EES devices along with characterization of device performance limitations such as thermal runaway and aging. Energy storage under extreme conditions is limited by the material properties of electrolytes, electrodes, and their synergetic interactions, and thus significant opportunities exist for chemical advancements and technological improvements. In this review, we present a comprehensive analysis of different applications associated with high temperature use (40-200 °C), recent advances in the development of reformulated or novel materials (including ionic liquids, solid polymer electrolytes, ceramics, and Si, LiFePO 4 , and LiMn 2 O 4 electrodes) with high thermal stability, and their demonstrative use in EES devices. Finally, we present a critical overview of the limitations of current high temperature systems and evaluate the future outlook of high temperature batteries with well-controlled safety, high energy/power density, and operation over a wide temperature range.

Electronic Components and Circuits for Extreme Temperature Environments

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Dickman, John E.; Gerber, Scott

2003-01-01

Planetary exploration missions and deep space probes require electrical power management and control systems that are capable of efficient and reliable operation in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures will not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures; thereby reducing system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior and tolerance in the electrical and thermal properties of semiconductor and dielectric materials at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial-off-the-shelf as well as developed components that are being characterized include switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being investigated for potential use in low temperature applications. An overview of the NASA Glenn Research Center Low Temperature Electronic Program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained through in-house component and circuit testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

High Temperature Near-Field NanoThermoMechanical Rectification

PubMed Central

Elzouka, Mahmoud; Ndao, Sidy

2017-01-01

Limited performance and reliability of electronic devices at extreme temperatures, intensive electromagnetic fields, and radiation found in space exploration missions (i.e., Venus & Jupiter planetary exploration, and heliophysics missions) and earth-based applications requires the development of alternative computing technologies. In the pursuit of alternative technologies, research efforts have looked into developing thermal memory and logic devices that use heat instead of electricity to perform computations. However, most of the proposed technologies operate at room or cryogenic temperatures, due to their dependence on material’s temperature-dependent properties. Here in this research, we show experimentally—for the first time—the use of near-field thermal radiation (NFTR) to achieve thermal rectification at high temperatures, which can be used to build high-temperature thermal diodes for performing logic operations in harsh environments. We achieved rectification through the coupling between NFTR and the size of a micro/nano gap separating two terminals, engineered to be a function of heat flow direction. We fabricated and tested a proof-of-concept NanoThermoMechanical device that has shown a maximum rectification of 10.9% at terminals’ temperatures of 375 and 530 K. Experimentally, we operated the microdevice in temperatures as high as about 600 K, demonstrating this technology’s suitability to operate at high temperatures. PMID:28322324

High Temperature Near-Field NanoThermoMechanical Rectification

NASA Astrophysics Data System (ADS)

Elzouka, Mahmoud; Ndao, Sidy

2017-03-01

Limited performance and reliability of electronic devices at extreme temperatures, intensive electromagnetic fields, and radiation found in space exploration missions (i.e., Venus & Jupiter planetary exploration, and heliophysics missions) and earth-based applications requires the development of alternative computing technologies. In the pursuit of alternative technologies, research efforts have looked into developing thermal memory and logic devices that use heat instead of electricity to perform computations. However, most of the proposed technologies operate at room or cryogenic temperatures, due to their dependence on material’s temperature-dependent properties. Here in this research, we show experimentally—for the first time—the use of near-field thermal radiation (NFTR) to achieve thermal rectification at high temperatures, which can be used to build high-temperature thermal diodes for performing logic operations in harsh environments. We achieved rectification through the coupling between NFTR and the size of a micro/nano gap separating two terminals, engineered to be a function of heat flow direction. We fabricated and tested a proof-of-concept NanoThermoMechanical device that has shown a maximum rectification of 10.9% at terminals’ temperatures of 375 and 530 K. Experimentally, we operated the microdevice in temperatures as high as about 600 K, demonstrating this technology’s suitability to operate at high temperatures.

Thin-film piezoelectric-on-silicon resonators for high-frequency reference oscillator applications.

PubMed

Abdolvand, Reza; Lavasani, Hossein M; Ho, Gavin K; Ayazi, Farrokh

2008-12-01

This paper studies the application of lateral bulk acoustic thin-film piezoelectric-on-substrate (TPoS) resonators in high-frequency reference oscillators. Low-motional-impedance TPoS resonators are designed and fabricated in 2 classes--high-order and coupled-array. Devices of each class are used to assemble reference oscillators and the performance characteristics of the oscillators are measured and discussed. Since the motional impedance of these devices is small, the transimpedance amplifier (TIA) in the oscillator loop can be reduced to a single transistor and 3 resistors, a format that is very power-efficient. The lowest reported power consumption is approximately 350 microW for an oscillator operating at approximately 106 MHz. A passive temperature compensation method is also utilized by including the buried oxide layer of the silicon-on-insulator (SOI) substrate in the structural resonant body of the device, and a very small (-2.4 ppm/ degrees C) temperature coefficient of frequency is obtained for an 82-MHz oscillator.

ZnO nanorod arrays and direct wire bonding on GaN surfaces for rapid fabrication of antireflective, high-temperature ultraviolet sensors

NASA Astrophysics Data System (ADS)

So, Hongyun; Senesky, Debbie G.

2016-11-01

Rapid, cost-effective, and simple fabrication/packaging of microscale gallium nitride (GaN) ultraviolet (UV) sensors are demonstrated using zinc oxide nanorod arrays (ZnO NRAs) as an antireflective layer and direct bonding of aluminum wires to the GaN surface. The presence of the ZnO NRAs on the GaN surface significantly reduced the reflectance to less than 1% in the UV and 4% in the visible light region. As a result, the devices fabricated with ZnO NRAs and mechanically stable aluminum bonding wires (pull strength of 3-5 gf) showed higher sensitivity (136.3% at room temperature and 148.2% increase at 250 °C) when compared with devices with bare (uncoated) GaN surfaces. In addition, the devices demonstrated reliable operation at high temperatures up to 300 °C, supporting the feasibility of simple and cost-effective UV sensors operating with higher sensitivity in high-temperature conditions, such as in combustion, downhole, and space exploration applications.

Epidermal photonic devices for quantitative imaging of temperature and thermal transport characteristics of the skin

NASA Astrophysics Data System (ADS)

Gao, Li; Zhang, Yihui; Malyarchuk, Viktor; Jia, Lin; Jang, Kyung-In; Chad Webb, R.; Fu, Haoran; Shi, Yan; Zhou, Guoyan; Shi, Luke; Shah, Deesha; Huang, Xian; Xu, Baoxing; Yu, Cunjiang; Huang, Yonggang; Rogers, John A.

2014-09-01

Characterization of temperature and thermal transport properties of the skin can yield important information of relevance to both clinical medicine and basic research in skin physiology. Here we introduce an ultrathin, compliant skin-like, or ‘epidermal’, photonic device that combines colorimetric temperature indicators with wireless stretchable electronics for thermal measurements when softly laminated on the skin surface. The sensors exploit thermochromic liquid crystals patterned into large-scale, pixelated arrays on thin elastomeric substrates; the electronics provide means for controlled, local heating by radio frequency signals. Algorithms for extracting patterns of colour recorded from these devices with a digital camera and computational tools for relating the results to underlying thermal processes near the skin surface lend quantitative value to the resulting data. Application examples include non-invasive spatial mapping of skin temperature with milli-Kelvin precision (±50 mK) and sub-millimetre spatial resolution. Demonstrations in reactive hyperaemia assessments of blood flow and hydration analysis establish relevance to cardiovascular health and skin care, respectively.

Fastener load tests and retention systems tests for cryogenic wind-tunnel models

NASA Technical Reports Server (NTRS)

Wallace, J. W.

1984-01-01

A-286 stainless steel screws were tested to determine the tensile load capability and failure mode of various screw sizes and types at both cryogenic and room temperature. Additionally, five fastener retention systems were tested by using A-286 screws with specimens made from the primary metallic alloys that are currently used for cryogenic models. The locking system effectiveness was examined by simple no-load cycling to cryogenic temperatures (-275 F) as well as by dynamic and static loading at cryogenic temperatures. In general, most systems were found to be effective retention devices. There are some differences between the various devices with respect to ease of application, cleanup, and reuse. Results of tests at -275 F imply that the cold temperatures act to improve screw retention. The improved retention is probably the result of differential thermal contraction and/or increased friction (thread-binding effects). The data provided are useful in selecting screw sizes, types, and locking devices for model systems to be tested in cryogenic wind tunnels.

Epidermal photonic devices for quantitative imaging of temperature and thermal transport characteristics of the skin.

PubMed

Gao, Li; Zhang, Yihui; Malyarchuk, Viktor; Jia, Lin; Jang, Kyung-In; Webb, R Chad; Fu, Haoran; Shi, Yan; Zhou, Guoyan; Shi, Luke; Shah, Deesha; Huang, Xian; Xu, Baoxing; Yu, Cunjiang; Huang, Yonggang; Rogers, John A

2014-09-19

Characterization of temperature and thermal transport properties of the skin can yield important information of relevance to both clinical medicine and basic research in skin physiology. Here we introduce an ultrathin, compliant skin-like, or 'epidermal', photonic device that combines colorimetric temperature indicators with wireless stretchable electronics for thermal measurements when softly laminated on the skin surface. The sensors exploit thermochromic liquid crystals patterned into large-scale, pixelated arrays on thin elastomeric substrates; the electronics provide means for controlled, local heating by radio frequency signals. Algorithms for extracting patterns of colour recorded from these devices with a digital camera and computational tools for relating the results to underlying thermal processes near the skin surface lend quantitative value to the resulting data. Application examples include non-invasive spatial mapping of skin temperature with milli-Kelvin precision (±50 mK) and sub-millimetre spatial resolution. Demonstrations in reactive hyperaemia assessments of blood flow and hydration analysis establish relevance to cardiovascular health and skin care, respectively.

InGaN High-Temperature Photovoltaic Cells

NASA Technical Reports Server (NTRS)

Starikov, David

2015-01-01

This Phase II project developed Indium-Gallium-Nitride (InGaN) photovoltaic cells for high-temperature and high-radiation environments. The project included theoretical and experimental refinement of device structures produced in Phase I as well as modeling and optimization of solar cell device processing. The devices have been tested under concentrated air mass zero (AM0) sunlight, at temperatures from 100 degC to 250 degC, and after exposure to ionizing radiation. The results are expected to further verify that InGaN can be used for high-temperature and high-radiation solar cells. The large commercial solar cell market could benefit from the hybridization of InGaN materials to existing solar cell technology, which would significantly increase cell efficiency without relying on highly toxic compounds. In addition, further development of this technology to even lower bandgap materials for space applications would extend lifetimes of satellite solar cell arrays due to increased radiation hardness. This could be of importance to the Departmentof Defense (DoD) and commercial satellite manufacturers.

Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications

NASA Astrophysics Data System (ADS)

Jacobs, K. J. P.; Stevens, B. J.; Baba, R.; Wada, O.; Mukai, T.; Hogg, R. A.

2017-10-01

We report valley current characterisation of high current density InGaAs/AlAs/InP resonant tunnelling diodes (RTDs) grown by metal-organic vapour phase epitaxy (MOVPE) for THz emission, with a view to investigate the origin of the valley current and optimize device performance. By applying a dual-pass fabrication technique, we are able to measure the RTD I-V characteristic for different perimeter/area ratios, which uniquely allows us to investigate the contribution of leakage current to the valley current and its effect on the PVCR from a single device. Temperature dependent (20 - 300 K) characteristics for a device are critically analysed and the effect of temperature on the maximum extractable power (PMAX) and the negative differential conductance (NDC) of the device is investigated. By performing theoretical modelling, we are able to explore the effect of typical variations in structural composition during the growth process on the tunnelling properties of the device, and hence the device performance.

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

PubMed Central

Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes

2016-01-01

Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics. PMID:26837240

Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microeletronic [corrected] devices.

PubMed

Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M; Calzada, M Lourdes

2016-02-03

Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound--morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT)--are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm(-2) is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

Low-Temperature Variation of Acoustic Velocity in PDMS for High-Frequency Applications.

PubMed

Streque, Jeremy; Rouxel, Didier; Talbi, Abdelkrim; Thomassey, Matthieu; Vincent, Brice

2018-05-01

Polydimethylsiloxane (PDMS) and other related silicon-based polymers are among the most widely employed elastomeric materials in microsystems, owing to their physical and chemical properties. Meanwhile, surface acoustic wave (SAW) and bulk acoustic wave (BAW) sensors and filters have been vastly explored for sensing and wireless applications. Many fields could benefit from the combined use of acoustic wave devices, and polydimethylsiloxane-based soft-substrates, microsystems, or packaging elements. The mechanical constants of PDMS strongly depend on frequency, similar to rubber materials. This brings to the exploration of the specific mechanical properties of PDMS encountered at high frequency, required for its exploitation in SAW or BAW devices. First, low-frequency mechanical behavior is confirmed from stress strain measurements, remaining useful for the exploitation of PDMS as a soft substrate or packaging material. The study, then, proposes a temperature-dependent, high-frequency mechanical study of PDMS based on Brillouin spectroscopy to determine the evolution of the longitudinal acoustic velocity in this material, which constitutes the main mechanical parameter for the design of acoustic wave devices. The PDMS glass transition is then retrieved by differential scanning calorimetry in order to confirm the observations made by Brillouin spectroscopy. This paper validates Brillouin spectroscopy as a very suitable characterization technique for the retrieval of longitudinal mechanical properties at low temperature, as a preliminary investigation for the design of acoustic wave devices coupled with soft materials.

A Computer-Automated Temperature Control System for Semiconductor Measurements.

DTIC Science & Technology

1979-11-01

Engineer: Jerry Silverman (RADC/ESE) temperature controller silicon devices data acquisition system mini-computer control application semiconductor dovice...characterization semiconductor materijals characterization silicon .’ AtlI EAC T 1 -fI I,,’-, *- s t ---v,.1.,,~ - d,f101h ir- IA i lr A computer...depends on the composition of the metals and the temperature of the junction. As the temperature of the junction increases so does the voltage at the

Uncooled infrared photodetectors in Poland

NASA Astrophysics Data System (ADS)

Piotrowski, J.; Piotrowski, A.

2006-03-01

The history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1-15 μm and 200-300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

Miniature optical fiber temperature sensor based on FMF-SCF structure

NASA Astrophysics Data System (ADS)

Zhang, Chuanbiao; Ning, Tigang; Zheng, Jingjing; Gao, Xuekai; Lin, Heng; Li, Jing; Pei, Li; Wen, Xiaodong

2018-03-01

We proposed and experimentally demonstrated a miniature optical fiber temperature sensor consisting of a seven core fiber (SCF) and a few mode fiber (FMF). The device is fabricated by splicing a section of FMF with a segment of SCF to form a FMF-SCF based sensing structure, and during the FMF region, few modes can be excited and will propagate within the SCF. In experiment, the proposed device has good quality interferometric spectra, and the highest extinction ratio of 27 dB was achieved. When the temperature increases from room temperature to 110 °C, the temperature response properties of the sensor have been investigated, the wavelength sensitivity of about 91.8 pm/°C and the amplitude sensitivity of about 1.57 × 10-2 a.u./°C are obtained, respectively. Due to its easy and controllable fabrication, the sensor can be a suitable candidate in temperature sensing applications.

Development of Annealing-Free, Solution-Processable Inverted Organic Solar Cells with N-Doped Graphene Electrodes using Zinc Oxide Nanoparticles.

PubMed

Jung, Seungon; Lee, Junghyun; Seo, Jihyung; Kim, Ungsoo; Choi, Yunseong; Park, Hyesung

2018-02-14

An annealing-free process is considered as a technological advancement for the development of flexible (or wearable) organic electronic devices, which can prevent the distortion of substrates and damage to the active components of the device and simplify the overall fabrication process to increase the industrial applications. Owing to its outstanding electrical, optical, and mechanical properties, graphene is seen as a promising material that could act as a transparent conductive electrode for flexible optoelectronic devices. Owing to their high transparency and electron mobility, zinc oxide nanoparticles (ZnO-NP) are attractive and promising for their application as charge transporting materials for low-temperature processes in organic solar cells (OSCs), particularly because most charge transporting materials require annealing treatments at elevated temperatures. In this study, graphene/annealing-free ZnO-NP hybrid materials were developed for inverted OSC by successfully integrating ZnO-NP on the hydrophobic surface of graphene, thus aiming to enhance the applicability of graphene as a transparent electrode in flexible OSC systems. Chemical, optical, electrical, and morphological analyses of ZnO-NPs showed that the annealing-free process generates similar results to those provided by the conventional annealing process. The approach was effectively applied to graphene-based inverted OSCs with notable power conversion efficiencies of 8.16% and 7.41% on the solid and flexible substrates, respectively, which promises the great feasibility of graphene for emerging optoelectronic device applications.

GaN Based Electronics And Their Applications

NASA Astrophysics Data System (ADS)

Ren, Fan

2002-03-01

The Group III-nitrides were initially researched for their promise to fill the void for a blue solid state light emitter. Electronic devices from III-nitrides have been a more recent phenomenon. The thermal conductivity of GaN is three times that of GaAs. For high power or high temperature applications, good thermal conductivity is imperative for heat removal or sustained operation at elevated temperatures. The development of III-N and other wide bandgap technologies for high temperature applications will likely take place at the expense of competing technologies, such as silicon-on-insulator (SOI), at moderate temperatures. At higher temperatures (>300°C), novel devices and components will become possible. The automotive industry will likely be one of the largest markets for such high temperature electronics. One of the most noteworthy advantages for III-N materials over other wide bandgap semiconductors is the availability of AlGaN/GaN and InGaN/GaN heterostructures. A 2-dimensional electron gas (2DEG) has been shown to exist at the AlGaN/GaN interface, and heterostructure field effect transistors (HFETs) from these materials can exhibit 2DEG mobilities approaching 2000 cm2 / V?s at 300K. Power handling capabilities of 12 W/mm appear feasible, and extraordinary large signal performance has already been demonstrated, with a current state-of-the-art of >10W/mm at X-band. In this talk, high speed and high temperature AlGaN/GaN HEMTs as well as MOSHEMTs, high breakdown voltage GaN (>6KV) and AlGaN (9.7 KV) Schottky diodes, and their applications will be presented.

Chip Scale Ultra-Stable Clocks: Miniaturized Phonon Trap Timing Units for PNT of CubeSats

NASA Technical Reports Server (NTRS)

Rais-Zadeh, Mina; Altunc, Serhat; Hunter, Roger C.; Petro, Andrew

2016-01-01

The Chip Scale Ultra-Stable Clocks (CSUSC) project aims to provide a superior alternative to current solutions for low size, weight, and power timing devices. Currently available quartz-based clocks have problems adjusting to the high temperature and extreme acceleration found in space applications, especially when scaled down to match small spacecraft size, weight, and power requirements. The CSUSC project aims to utilize dual-mode resonators on an ovenized platform to achieve the exceptional temperature stability required for these systems. The dual-mode architecture utilizes a temperature sensitive and temperature stable mode simultaneously driven on the same device volume to eliminate ovenization error while maintaining extremely high performance. Using this technology it is possible to achieve parts-per-billion (ppb) levels of temperature stability with multiple orders of magnitude smaller size, weight, and power.

Thermometric determination of cartilage matrix temperatures during thermal chondroplasty: comparison of bipolar and monopolar radiofrequency devices.

PubMed

Edwards, Ryland B; Lu, Yan; Rodriguez, Edwin; Markel, Mark D

2002-04-01

To compare cartilage matrix temperatures between monopolar radiofrequency energy (mRFE) and bipolar RFE (bRFE) at 3 depths under the articular surface during thermal chondroplasty. We hypothesized that cartilage temperatures would be higher at all cartilage depths for the bRFE device than for the mRFE device. Randomized trial using bovine cartilage. Sixty osteochondral sections from the femoropatellar joint of 15 adult cattle were used for this study. Using a custom jig, fluoroptic thermometry probes were placed at one of the following depths under the articular surface: 200 microm, 500 microm, or 2,000 microm. RF treatment was performed either with fluid flow (F) (120 mL/min) or without fluid flow (NF) (n = 5/depth/RFE device/flow; total specimens, 60). Irrigation fluid temperature was room temperature (22 degrees C). Thermometry data were acquired at 4 Hz for 5 seconds with the RF probe off, for 20 seconds with the RF probe on, and then for 15 seconds with the RF probe off. During RF treatment, a 0.79-cm2 area (1.0-cm diameter) of the articular surface centered over the thermometry probe was treated in a paintbrush manner in noncontact (bRFE) or light contact (mRFE). Thermal chondroplasty with bRFE resulted in higher cartilage matrix temperatures compared with mRFE for all depths and regardless of fluid flow. Bipolar RFE resulted in temperatures of 95 degrees C to 100 degrees C at 200 microm and 500 microm under the surface, with temperatures of 75 degrees C to 78 degrees C at 2,000 microm. Fluid flow during bRFE application had no effect at 200 microm. Monopolar RFE resulted in temperatures of 61 degrees C to 68 degrees C at 200 microm, 54 degrees C to 70 degrees C at 500 microm under the surface, and 28 degrees C to 30 degrees C at 2,000 microm below the surface. A significant effect of fluid flow during mRFE application occurred at 200 microm (NF, 61 degrees C; F, 63 degrees C) and 500 microm (NF, 53 degrees C; F, 68 degrees C). In this study, we found significant differences between bRFE and a temperature-controlled mRFE device with regard to depth of thermal heating of cartilage in vitro. Bipolar RFE resulted in matrix temperatures high enough (>70 degrees C) to kill cells as deep as 2,000 microm under the articular surface. Fluid flow during thermal chondroplasty had the effect of significantly increasing cartilage matrix temperatures at 200 and 500 microm with the mRFE device. During thermal chondroplasty, bRFE creates greater matrix temperature elevations at equivalent depths and treatment duration than does mRFE. Excessive temperatures generated deep within the cartilage matrix could cause full-thickness chondrocyte death, in vivo.

Quantitative Accelerated Life Testing of MEMS Accelerometers.

PubMed

Bâzu, Marius; Gălăţeanu, Lucian; Ilian, Virgil Emil; Loicq, Jerome; Habraken, Serge; Collette, Jean-Paul

2007-11-20

Quantitative Accelerated Life Testing (QALT) is a solution for assessing thereliability of Micro Electro Mechanical Systems (MEMS). A procedure for QALT is shownin this paper and an attempt to assess the reliability level for a batch of MEMSaccelerometers is reported. The testing plan is application-driven and contains combinedtests: thermal (high temperature) and mechanical stress. Two variants of mechanical stressare used: vibration (at a fixed frequency) and tilting. Original equipment for testing at tiltingand high temperature is used. Tilting is appropriate as application-driven stress, because thetilt movement is a natural environment for devices used for automotive and aerospaceapplications. Also, tilting is used by MEMS accelerometers for anti-theft systems. The testresults demonstrated the excellent reliability of the studied devices, the failure rate in the"worst case" being smaller than 10 -7 h -1 .

Amorphous metallizations for high-temperature semiconductor device applications

NASA Technical Reports Server (NTRS)

Wiley, J. D.; Perepezko, J. H.; Nordman, J. E.; Kang-Jin, G.

1981-01-01

The initial results of work on a class of semiconductor metallizations which appear to hold promise as primary metallizations and diffusion barriers for high temperature device applications are presented. These metallizations consist of sputter-deposited films of high T sub g amorphous-metal alloys which (primarily because of the absence of grain boundaries) exhibit exceptionally good corrosion-resistance and low diffusion coefficients. Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on Si, GaAs, GaP, and various insulating substrates. The films adhere extremely well to the substrates and remain amorphous during thermal cycling to at least 500 C. Rutherford backscattering and Auger electron spectroscopy measurements indicate atomic diffussivities in the 10 to the -19th power sq cm/S range at 450 C.

Microwave Dielectric Heating of Drops in Microfluidic Devices†

PubMed Central

Issadore, David; Humphry, Katherine J.; Brown, Keith A.; Sandberg, Lori; Weitz, David; Westervelt, Robert M.

2010-01-01

We present a technique to locally and rapidly heat water drops in microfluidic devices with microwave dielectric heating. Water absorbs microwave power more efficiently than polymers, glass, and oils due to its permanent molecular dipole moment that has a large dielectric loss at GHz frequencies. The relevant heat capacity of the system is a single thermally isolated picoliter drop of water and this enables very fast thermal cycling. We demonstrate microwave dielectric heating in a microfluidic device that integrates a flow-focusing drop maker, drop splitters, and metal electrodes to locally deliver microwave power from an inexpensive, commercially available 3.0 GHz source and amplifier. The temperature of the drops is measured by observing the temperature dependent fluorescence intensity of cadmium selenide nanocrystals suspended in the water drops. We demonstrate characteristic heating times as short as 15 ms to steady-state temperatures as large as 30°C above the base temperature of the microfluidic device. Many common biological and chemical applications require rapid and local control of temperature, such as PCR amplification of DNA, and can benefit from this new technique. PMID:19495453

Self-sensing of temperature rises on light emitting diode based optrodes

NASA Astrophysics Data System (ADS)

Dehkhoda, Fahimeh; Soltan, Ahmed; Ponon, Nikhil; Jackson, Andrew; O'Neill, Anthony; Degenaar, Patrick

2018-04-01

Objective. This work presents a method to determine the surface temperature of microphotonic medical implants like LEDs. Our inventive step is to use the photonic emitter (LED) employed in an implantable device as its own sensor and develop readout circuitry to accurately determine the surface temperature of the device. Approach. There are two primary classes of applications where microphotonics could be used in implantable devices; opto-electrophysiology and fluorescence sensing. In such scenarios, intense light needs to be delivered to the target. As blue wavelengths are scattered strongly in tissue, such delivery needs to be either via optic fibres, two-photon approaches or through local emitters. In the latter case, as light emitters generate heat, there is a potential for probe surfaces to exceed the 2 °C regulatory. However, currently, there are no convenient mechanisms to monitor this in situ. Main results. We present the electronic control circuit and calibration method to monitor the surface temperature change of implantable optrode. The efficacy is demonstrated in air, saline, and brain. Significance. This paper, therefore, presents a method to utilize the light emitting diode as its own temperature sensor.

In situ high-temperature characterization of AlN-based surface acoustic wave devices

NASA Astrophysics Data System (ADS)

Aubert, Thierry; Bardong, Jochen; Legrani, Ouarda; Elmazria, Omar; Badreddine Assouar, M.; Bruckner, Gudrun; Talbi, Abdelkrim

2013-07-01

We report on in situ electrical measurements of surface acoustic wave delay lines based on AlN/sapphire structure and iridium interdigital transducers between 20 °C and 1050 °C under vacuum conditions. The devices show a great potential for temperature sensing applications. Burnout is only observed after 60 h at 1050 °C and is mainly attributed to the agglomeration phenomena undergone by the Ir transducers. However, despite the vacuum conditions, a significant oxidation of the AlN film is observed, pointing out the limitation of the considered structure at least at such extreme temperatures. Original structures overcoming this limitation are then proposed and discussed.

Review of vortex tube expansion in vapour compression refrigeration system

NASA Astrophysics Data System (ADS)

Liu, Yefeng; Yu, Jun

2018-05-01

A vortex tube expansion device replacing the throttle valve is proposed to improve the efficiency of vapour compression refrigeration cycle by reducing the loss of irreversibility in expansion process. The vortex tube is well-suited for these applications because it is simple, compact, light, quiet. Thus, this paper presents an overview of the thermodynamic analysis of vapour compression refrigeration cycle with vortex tube expansion device using different refrigerants. The paper also reviews the experiments and the calculations presented in previous studies on temperature separation in the vortex tube. The temperature separation mechanism and the flow-field inside the vortex tubes is explored by measuring the pressure, velocity, and temperature fields.

Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian; Parsons, James D.

1996-01-01

SiC-based high temperature power devices are being developed for aerospace systems which will require high reliability. One behavior crucial to power device reliability. To date, it has necessarily been assumed to date is that the breakdown behavior of SiC pn junctions will be similar to highly reliable silicon-based pn junctions. Challenging this assumption, we report the observation of anomalous unreliable reverse breakdown behavior in moderately doped (2-3 x 10(exp 17) cm(exp -3)) small-area 4H- and 6H-SiC pn junction diodes at temperatures ranging from 298 K (25 C) to 873 K (600 C). We propose a mechanism in which carrier emission from un-ionized dopants and deep level defects leads to this unstable behavior. The fundamental instability mechanism is applicable to all wide bandgap semiconductors whose dopants are significantly un-ionized at typical device operating temperatures.

Self-Propelled Hovercraft Based on Cold Leidenfrost Phenomenon

PubMed Central

Shi, Meng; Ji, Xing; Feng, Shangsheng; Yang, Qingzhen; Lu, Tian Jian; Xu, Feng

2016-01-01

The Leidenfrost phenomenon of liquid droplets levitating and dancing when placed upon a hot plate due to propulsion of evaporative vapor has been extended to many self-propelled circumstances. However, such self-propelled Leidenfrost devices commonly need a high temperature for evaporation and a structured solid substrate for directional movements. Here we observed a “cold Leidenfrost phenomenon” when placing a dry ice device on the surface of room temperature water, based on which we developed a controllable self-propelled dry ice hovercraft. Due to the sublimated vapor, the hovercraft could float on water and move in a programmable manner through designed structures. As demonstrations, we showed that the hovercraft could be used as a cargo ship or a petroleum contamination collector without consuming external power. This phenomenon enables a novel way to utilize programmable self-propelled devices on top of room temperature water, holding great potential for applications in energy, chemical engineering and biology. PMID:27338595

Self-Propelled Hovercraft Based on Cold Leidenfrost Phenomenon.

PubMed

Shi, Meng; Ji, Xing; Feng, Shangsheng; Yang, Qingzhen; Lu, Tian Jian; Xu, Feng

2016-06-24

The Leidenfrost phenomenon of liquid droplets levitating and dancing when placed upon a hot plate due to propulsion of evaporative vapor has been extended to many self-propelled circumstances. However, such self-propelled Leidenfrost devices commonly need a high temperature for evaporation and a structured solid substrate for directional movements. Here we observed a "cold Leidenfrost phenomenon" when placing a dry ice device on the surface of room temperature water, based on which we developed a controllable self-propelled dry ice hovercraft. Due to the sublimated vapor, the hovercraft could float on water and move in a programmable manner through designed structures. As demonstrations, we showed that the hovercraft could be used as a cargo ship or a petroleum contamination collector without consuming external power. This phenomenon enables a novel way to utilize programmable self-propelled devices on top of room temperature water, holding great potential for applications in energy, chemical engineering and biology.

Thermo-optic characteristic of DNA thin solid film and its application as a biocompatible optical fiber temperature sensor.

PubMed

Hong, Seongjin; Jung, Woohyun; Nazari, Tavakol; Song, Sanggwon; Kim, Taeoh; Quan, Chai; Oh, Kyunghwan

2017-05-15

We report unique thermo-optical characteristics of DNA-Cetyl tri-methyl ammonium (DNA-CTMA) thin solid film with a large negative thermo-optical coefficient of -3.4×10^-4/°C in the temperature range from 20°C to 70°C without any observable thermal hysteresis. By combining this thermo-optic DNA film and fiber optic multimode interference (MMI) device, we experimentally demonstrated a highly sensitive compact temperature sensor with a large spectral shift of 0.15 nm/°C. The fiber optic MMI device was a concatenated structure with single-mode fiber (SMF)-coreless silica fiber (CSF)-single mode fiber (SMF) and the DNA-CTMA film was deposited on the CSF. The spectral shifts of the device in experiments were compared with the beam propagation method, which showed a good agreement.

Low Temperature Double-layer Capacitors with Improved Energy Density: An Overview of Recent Development Efforts

NASA Technical Reports Server (NTRS)

Brandon, Erik J.; West, William C.; Smart, Marshall C.; Korenblit, Yair; Kajdos, Adam; Kvit, Alexander; Jagiello, Jacek; Yushin, Gleb

2012-01-01

Electrochemical double-layer capacitors are finding increased use in a wide range of energy storage applications, particularly where high pulse power capabilities are required. Double-layer capacitors store charge at a liquid/solid interface, making them ideal for low temperature power applications, due to the facile kinetic processes associated with the rearrangement of the electrochemical double-layer at these temperatures. Potential low temperature applications include hybrid and electric vehicles, operations in polar regions, high altitude aircraft and aerospace avionics, and distributed environmental and structural health monitoring. State-of-the-art capacitors can typically operate to -40 C, with a subsequent degradation in power performance below room temperature. However, recent efforts focused on advanced electrolyte and electrode systems can enable operation to temperatures as low as -70 C, with capacities similar to room temperature values accompanied by reasonably low equivalent series resistances. This presentation will provide an overview of recent development efforts to extend and improve the wide temperature performance of these devices.

Wide-Band Spatially Tunable Photonic Bandgap in Visible Spectral Range and Laser based on a Polymer Stabilized Blue Phase

PubMed Central

Lin, Jia-De; Wang, Tsai-Yen; Mo, Ting-Shan; Huang, Shuan-Yu; Lee, Chia-Rong

2016-01-01

This work successfully develops a largely-gradient-pitched polymer-stabilized blue phase (PSBP) photonic bandgap (PBG) device with a wide-band spatial tunability in nearly entire visible region within a wide blue phase (BP) temperature range including room temperature. The device is fabricated based on the reverse diffusion of two injected BP-monomer mixtures with a low and a high chiral concentrations and afterwards through UV-curing. This gradient-pitched PSBP can show a rainbow-like reflection appearance in which the peak wavelength of the PBG can be spatially tuned from the blue to the red regions at room temperature. The total tuning spectral range for the cell is as broad as 165 nm and covers almost the entire visible region. Based on the gradient-pitched PSBP, a spatially tunable laser is also demonstrated in this work. The temperature sensitivity of the lasing wavelength for the laser is negatively linear and approximately −0.26 nm/°C. The two devices have a great potential for use in applications of photonic devices and displays because of their multiple advantages, such as wide-band tunability, wide operated temperature range, high stability and reliability, no issue of hysteresis, no need of external controlling sources, and not slow tuning speed (mechanically). PMID:27456475

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

NASA Technical Reports Server (NTRS)

Boomer, Kristen; Hammoud, Ahmad

2015-01-01

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

High-Temperature High-Power Packaging Techniques for HEV Traction Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barlow, F.D.; Elshabini, A.

A key issue associated with the wider adoption of hybrid-electric vehicles (HEV) and plug in hybrid-electric vehicles (PHEV) is the implementation of the power electronic systems that are required in these products [1]. To date, many consumers find the adoption of these technologies problematic based on a financial analysis of the initial cost versus the savings available from reduced fuel consumption. Therefore, one of the primary industry goals is the reduction in the price of these vehicles relative to the cost of traditional gasoline powered vehicles. Part of this cost reduction must come through optimization of the power electronics requiredmore » by these vehicles. In addition, the efficiency of the systems must be optimized in order to provide the greatest range possible. For some drivers, any reduction in the range associated with a potential HEV or PHEV solution in comparison to a gasoline powered vehicle represents a significant barrier to adoption and the efficiency of the power electronics plays an important role in this range. Likewise, high efficiencies are also important since lost power further complicates the thermal management of these systems. Reliability is also an important concern since most drivers have a high level of comfort with gasoline powered vehicles and are somewhat reluctant to switch to a less proven technology. Reliability problems in the power electronics or associated components could not only cause a high warranty cost to the manufacturer, but may also taint these technologies in the consumer's eyes. A larger vehicle offering in HEVs is another important consideration from a power electronics point of view. A larger vehicle will need more horsepower, or a larger rated drive. In some ways this will be more difficult to implement from a cost and size point of view. Both the packaging of these modules and the thermal management of these systems at competitive price points create significant challenges. One way in which significant cost reduction of these systems could be achieved is through the use of a single coolant loop for both the power electronics as well as the internal combustion engine (ICE) [2]. This change would reduce the complexity of the cooling system which currently relies on two loops to a single loop [3]. However, the current nominal coolant temperature entering these inverters is 65 C [3], whereas a normal ICE coolant temperature would be much higher at approximately 100 C. This change in coolant temperature significantly increases the junction temperatures of the devices and creates a number of challenges for both device fabrication and the assembly of these devices into inverters and converters for HEV and PHEV applications. With this change in mind, significant progress has been made on the use of SiC devices for inverters that can withstand much higher junction temperatures than traditional Si based inverters [4,5,6]. However, a key problem which the single coolant loop and high temperature devices is the effective packaging of these devices and related components into a high temperature inverter. The elevated junction temperatures that exist in these modules are not compatible with reliable inverters based on existing packaging technology. This report seeks to provide a literature survey of high temperature packaging and to highlight the issues related to the implementation of high temperature power electronic modules for HEV and PHEV applications. For purposes of discussion, it will be assumed in this report that 200 C is the targeted maximum junction temperature.« less

Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

PubMed Central

de Cesare, Giampiero; Nascetti, Augusto; Caputo, Domenico

2015-01-01

In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied. PMID:26016913

New Technologies for Enhanced Environmental Testing on Spacecraft Structures

NASA Astrophysics Data System (ADS)

Ascani, Maurizio; Alemanno, Leonardo; Rinalducci, Fabrizio

2014-06-01

This paper presents engineering approaches to realize Thermal Vacuum Chambers (TVC) for different R&D applications: (1) testing of propulsion systems, operating as a Hall thruster, (2) increasing of the DUT (device under test) surface temperature up to +550°C, (3) installation of the solar system inside the TVC. Each application implies specific problems that need to be managed by TVC during the tests. In particular, emission of high-energy ionized gas at high temperatures, surface temperatures higher 800 K and optical specimen contamination represent under high vacuum conditions significant challenges for test equipment.

A dual-stage sodium thermal electrochemical converter (Na-TEC)

NASA Astrophysics Data System (ADS)

Limia, Alexander; Ha, Jong Min; Kottke, Peter; Gunawan, Andrey; Fedorov, Andrei G.; Lee, Seung Woo; Yee, Shannon K.

2017-12-01

The sodium thermal electrochemical converter (Na-TEC) is a heat engine that generates electricity through the isothermal expansion of sodium ions. The Na-TEC is a closed system that can theoretically achieve conversion efficiencies above 45% when operating between thermal reservoirs at 1150 K and 550 K. However, thermal designs have confined previous single-stage devices to thermal efficiencies below 20%. To mitigate some of these limitations, we consider dividing the isothermal expansion into two stages; one at the evaporator temperature (1150 K) and another at an intermediate temperature (650 K-1050 K). This dual-stage Na-TEC takes advantage of regeneration and reheating, and could be amenable to better thermal management. Herein, we demonstrate how the dual-stage device can improve the efficiency by up to 8% points over the best performing single-stage device. We also establish an application regime map for the single- and dual-stage Na-TEC in terms of the power density and the total thermal parasitic loss. Generally, a single-stage Na-TEC should be used for applications requiring high power densities, whereas a dual-stage Na-TEC should be used for applications requiring high efficiency.

A coaxial cable Fabry-Perot interferometer for sensing applications.

PubMed

Huang, Jie; Wang, Tao; Hua, Lei; Fan, Jun; Xiao, Hai; Luo, Ming

2013-11-07

This paper reports a novel coaxial cable Fabry-Perot interferometer for sensing applications. The sensor is fabricated by drilling two holes half-way into a coaxial cable. The device physics was described. The temperature and strain responses of the sensor were tested. The measurement error was calculated and analyzed.

40 CFR 94.203 - Application for certification.

Code of Federal Regulations, 2013 CFR

2013-07-01

... in § 94.210 to accurately reflect the manufacturer's production. (d) Each application shall include... temperature or engine speed); (iii) Each auxiliary emission control device (AECD); and (iv) All fuel system components to be installed on any production or test engine(s). (3) A description of the test engine. (4...

40 CFR 94.203 - Application for certification.

Code of Federal Regulations, 2011 CFR

2011-07-01

... in § 94.210 to accurately reflect the manufacturer's production. (d) Each application shall include... temperature or engine speed); (iii) Each auxiliary emission control device (AECD); and (iv) All fuel system components to be installed on any production or test engine(s). (3) A description of the test engine. (4...

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

NASA Technical Reports Server (NTRS)

Jah, Muzar; Simon, Eric; Sharma, Ashok

2003-01-01

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

The ideal chip is not enough: Issues retarding the success of wide band-gap devices

NASA Astrophysics Data System (ADS)

Kaminski, Nando

2017-04-01

Semiconductor chips made from the wide band-gap (WBG) materials silicon carbide (SiC) or gallium nitride (GaN) are already approaching the theoretical limits given by the respective materials. Unfortunately, their advantages over silicon devices cannot be fully exploited due to limitations imposed by the device packaging or the circuitry around the semiconductors. Stray inductances slow down the switching speed and increase losses, packaging materials limit the maximum temperature and the maximum useful temperature swing, and passives limit the maximum switching frequency. All these issues have to be solved or at least minimised to make WBG attractive for a wider range of applications and, consequently, to profit from the economy of scale.

Simulation of a steady-state integrated human thermal system.

NASA Technical Reports Server (NTRS)

Hsu, F. T.; Fan, L. T.; Hwang, C. L.

1972-01-01

The mathematical model of an integrated human thermal system is formulated. The system consists of an external thermal regulation device on the human body. The purpose of the device (a network of cooling tubes held in contact with the surface of the skin) is to maintain the human body in a state of thermoneutrality. The device is controlled by varying the inlet coolant temperature and coolant mass flow rate. The differential equations of the model are approximated by a set of algebraic equations which result from the application of the explicit forward finite difference method to the differential equations. The integrated human thermal system is simulated for a variety of combinations of the inlet coolant temperature, coolant mass flow rate, and metabolic rates.

Integrated microelectrode array and microfluidics for temperature clamp of sensory neurons in culture.

PubMed

Pearce, Thomas M; Wilson, J Adam; Oakes, S George; Chiu, Shing-Yan; Williams, Justin C

2005-01-01

A device for cell culture is presented that combines MEMS technology and liquid-phase photolithography to create a microfluidic chip that influences and records electrical cellular activity. A photopolymer channel network is formed on top of a multichannel microelectrode array. Preliminary results indicated successful local thermal control within microfluidic channels and control of lamina position over the electrode array. To demonstrate the biological application of such a device, adult dissociated dorsal root ganglion neurons with a subpopulation of thermally-sensitive cells are attached onto the electrode array. Using laminar flow, dynamic control of local temperature of the neural cells was achieved while maintaining a constant chemical culture medium. Recording the expected altered cellular activity confirms the success of the integrated device.

Semiconductor with protective surface coating and method of manufacture thereof. [Patent application

DOEpatents

Hansen, W.L.; Haller, E.E.

1980-09-19

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fakhri, M.; Goerrn, P.; Riedl, T.

2011-09-19

Transparent zinc-tin-oxide (ZTO) thin film transistors (TFTs) have been prepared by DC magnetron sputtering. Compared to reference devices with a channel deposited at room temperature and subsequently annealing at 400 deg. C, a substantially enhanced stability against bias stress is evidenced for devices with in-situ substrate heating during deposition (400 deg. C). A reduced density of sub-gap defect states in TFT channels prepared with in-situ substrate heating is found. Concomitantly, a reduced sensitivity to the adsorption of ambient gases is evidenced for the in-situ heated devices. This finding is of particular importance for an application as driver electronics for organicmore » light emitting diode displays.« less

Electrical characterization of glass, teflon, and tantalum capacitors at high temperatures

NASA Technical Reports Server (NTRS)

Hammoud, A. N.; Baumann, E. D.; Myers, I. T.; Overton, E.

1991-01-01

Dielectric materials and electrical components and devices employed in radiation fields and the space environment are often exposed to elevated temperatures among other things. Therefore, these systems must withstand the high temperature exposure while still providing good electrical and other functional properties. Experiments were carried out to evaluate glass, teflon, and tantalum capacitors for potential use in high temperature applications. The capacitors were characterized in terms of their capacitance and dielectric loss as a function of temperature up to 200 C. At a given temperature, these properties were obtained in a frequency range of 50 Hz to 100 kHz. The DC leakage current measurements were also performed in a temperature range from 20 to 200 C. The obtained results are discussed and conclusions are made concerning the suitability of the capacitors investigated for high temperature applications.

Hot embossing and thermal bonding of poly(methyl methacrylate) microfluidic chips using positive temperature coefficient ceramic heater.

PubMed

Wang, Xia; Zhang, Luyan; Chen, Gang

2011-11-01

As a self-regulating heating device, positive temperature coefficient ceramic heater was employed for hot embossing and thermal bonding of poly(methyl methacrylate) microfluidic chip because it supplied constant-temperature heating without electrical control circuits. To emboss a channel plate, a piece of poly(methyl methacrylate) plate was sandwiched between a template and a microscopic glass slide on a positive temperature coefficient ceramic heater. All the assembled components were pressed between two elastic press heads of a spring-driven press while a voltage was applied to the heater for 10 min. Subsequently, the embossed poly(methyl methacrylate) plate bearing negative relief of channel networks was bonded with a piece of poly(methyl methacrylate) cover sheet to obtain a complete microchip using a positive temperature coefficient ceramic heater and a spring-driven press. High quality microfluidic chips fabricated by using the novel embossing/bonding device were successfully applied in the electrophoretic separation of three cations. Positive temperature coefficient ceramic heater indicates great promise for the low-cost production of poly(methyl methacrylate) microchips and should find wide applications in the fabrication of other thermoplastic polymer microfluidic devices.

Efficient Skin Temperature Sensor and Stable Gel-Less Sticky ECG Sensor for a Wearable Flexible Healthcare Patch.

PubMed

Yamamoto, Yuki; Yamamoto, Daisuke; Takada, Makoto; Naito, Hiroyoshi; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2017-09-01

Wearable, flexible healthcare devices, which can monitor health data to predict and diagnose disease in advance, benefit society. Toward this future, various flexible and stretchable sensors as well as other components are demonstrated by arranging materials, structures, and processes. Although there are many sensor demonstrations, the fundamental characteristics such as the dependence of a temperature sensor on film thickness and the impact of adhesive for an electrocardiogram (ECG) sensor are yet to be explored in detail. In this study, the effect of film thickness for skin temperature measurements, adhesive force, and reliability of gel-less ECG sensors as well as an integrated real-time demonstration is reported. Depending on the ambient conditions, film thickness strongly affects the precision of skin temperature measurements, resulting in a thin flexible film suitable for a temperature sensor in wearable device applications. Furthermore, by arranging the material composition, stable gel-less sticky ECG electrodes are realized. Finally, real-time simultaneous skin temperature and ECG signal recordings are demonstrated by attaching an optimized device onto a volunteer's chest. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Simulation of a steady-state integrated human thermal system.

NASA Technical Reports Server (NTRS)

Hsu, F. T.; Fan, L. T.; Hwang, C. L.

1972-01-01

The mathematical model of an integrated human thermal system is formulated. The system consists of an external thermal regulation device on the human body. The purpose of the device (a network of cooling tubes held in contact with the surface of the skin) is to maintain the human body in a state of thermoneutrality. The device is controlled by varying the inlet coolant temperature and coolant mass flow rate. The differential equations of the model are approximated by a set of algebraic equations which result from the application of the explicit forward finite difference method to the differential equations. The integrated human thermal system is simulated for a variety of combinations of the inlet coolant temperature, coolant mass flow rate, and metabolic rates. Two specific cases are considered: (1) the external thermal regulation device is placed only on the head and (2) the devices are placed on the head and the torso. The results of the simulation indicate that when the human body is exposed to hot environment, thermoneutrality can be attained by localized cooling if the operating variables of the external regulation device(s) are properly controlled.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

Application of electrochemical method to microfabricated region in single-crystal device of FeSe1- x Te x superconductors

NASA Astrophysics Data System (ADS)

Okada, Kazuhiro; Takagi, Tomohiro; Kobayashi, Masahiro; Ohnuma, Haruka; Noji, Takashi; Koike, Yoji; Ayukawa, Shin-ya; Kitano, Haruhisa

2018-04-01

The application of an electrochemical method to the iron-based chalcogenide superconductors has great potentials in enhancing their properties such as the superconducting transition temperature. Unfortunately, this method has been limited to polycrystalline powders or thin film samples with a large surface area. Here, we demonstrate that the electrochemical method can be usefully applied to single-crystal devices of FeSe1- x Te x superconductors by combining it with the focused ion beam (FIB) microfabrication techniques. Our results open a new route to developing the high-quality superconducting devices fabricated using layered iron-based chalcogenides, whose properties are electrochemically controlled.

Characterization of Custom-Designed Charge-Coupled Devices for Applications to Gas and Aerosol Monitoring Sensorcraft Instrument

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Abedin, M. Nurul; Farnsworth, Glenn R.; Garcia, Christopher S.; Zawodny, Joseph M.

2005-01-01

Custom-designed charge-coupled devices (CCD) for Gas and Aerosols Monitoring Sensorcraft instrument were developed. These custom-designed CCD devices are linear arrays with pixel format of 512x1 elements and pixel size of 10x200 sq m. These devices were characterized at NASA Langley Research Center to achieve a full well capacity as high as 6,000,000 e-. This met the aircraft flight mission requirements in terms of signal-to-noise performance and maximum dynamic range. Characterization and analysis of the electrical and optical properties of the CCDs were carried out at room temperature. This includes measurements of photon transfer curves, gain coefficient histograms, read noise, and spectral response. Test results obtained on these devices successfully demonstrated the objectives of the aircraft flight mission. In this paper, we describe the characterization results and also discuss their applications to future mission.

Extreme Environment Sensing Using Femtosecond Laser-Inscribed Fiber Bragg Gratings

PubMed Central

Grobnic, Dan; Hnatovsky, Cyril; Walker, Robert B.; Coulas, David; Ding, Huimin

2017-01-01

The femtosecond laser-induced fiber Bragg grating is an effective sensor technology that can be deployed in harsh environments. Depending on the optical fiber chosen and the inscription parameters that are used, devices suitable for high temperature, pressure, ionizing radiation and strain sensor applications are possible. Such devices are appropriate for aerospace or energy production applications where there is a need for components, instrumentation and controls that can function in harsh environments. This paper will present a review of some of the more recent developments in this field. PMID:29240721

Room temperature magnetoelectric coupling and electrical properties of Ni doped Co - ferrite - PZT nanocomposites

NASA Astrophysics Data System (ADS)

Chakraborty, Sarit; Mandal, S. K.; Dey, P.; Saha, B.

2018-04-01

Multiferroic magnetoelectric materials are very interesting for the researcher for the potential application in device preparation. We have prepared 0.3Ni0.5Co0.5Fe2O4 - 0.7PbZr0.58Ti0.42O3 magnetoelectric nanocomposites through chemical pyrophoric reaction process followed by solid state reaction and represented magnetoelectric coupling coefficient, thermally and magnetically tunable AC electrical properties. For the structural characterization XRD pattern and SEM micrograph have been analyzed. AC electrical properties reveal that the grain boundaries resistances are played dominating role in the conduction process in the system. Dielectric studies are represents that the dielectric polarization is decreased with frequency as well as magnetic field where it increases with increasing temperature. The dielectric profiles also represents the electromechanical resonance at a frequency of ˜183 kHz. High dielectric constant and low dielectric loss at room temperature makes the material very promising for the application of magnetic field sensor devices.

In-plane dielectric properties of epitaxial Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown on GaAs for tunable device application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Zhibin; Hao Jianhua

2012-09-01

We have epitaxially deposited ferroelectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) thin films grown on GaAs substrate via SrTiO{sub 3} buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from -190 to 90 Degree-Sign C, indicating Curie temperature of the BST film to be around 52 Degree-Sign C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is foundmore » to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device application.« less

Thermal expansion as a precision actuator

NASA Astrophysics Data System (ADS)

Miller, Chris; Montgomery, David; Black, Martin; Schnetler, Hermine

2016-07-01

The UK ATC has developed a novel thermal actuator design as part of an OPTICON project focusing on the development of a Freeform Active Mirror Element (FAME). The actuator uses the well understood concept of thermal expansion to generate the required force and displacement. As heat is applied to the actuator material it expands linearly. A resistance temperature device (RTD) is embedded in the centre of the actuator and is used both as a heater and a sensor. The RTD temperature is controlled electronically by injecting a varying amount of current into the device whilst measuring the voltage across it. Temperature control of the RTD has been achieved to within 0.01°C. A 3D printed version of the actuator is currently being used at the ATC to deform a mirror but it has several advantages that may make it suitable to other applications. The actuator is cheap to produce whilst obtaining a high accuracy and repeatability. The actuator design would be suitable for applications requiring large numbers of actuators with high precision.

Micromachined lab-on-a-tube sensors for simultaneous brain temperature and cerebral blood flow measurements.

PubMed

Li, Chunyan; Wu, Pei-Ming; Hartings, Jed A; Wu, Zhizhen; Cheyuo, Cletus; Wang, Ping; LeDoux, David; Shutter, Lori A; Ramaswamy, Bharat Ram; Ahn, Chong H; Narayan, Raj K

2012-08-01

This work describes the development of a micromachined lab-on-a-tube device for simultaneous measurement of brain temperature and regional cerebral blood flow. The device consists of two micromachined gold resistance temperature detectors with a 4-wire configuration. One is used as a temperature sensor and the other as a flow sensor. The temperature sensor operates with AC excitation current of 500 μA and updates its outputs at a rate of 5 Hz. The flow sensor employs a periodic heating and cooling technique under constant-temperature mode and updates its outputs at a rate of 0.1 Hz. The temperature sensor is also used to compensate for temperature changes during the heating period of the flow sensor to improve the accuracy of flow measurements. To prevent thermal and electronic crosstalk between the sensors, the temperature sensor is located outside the "thermal influence" region of the flow sensor and the sensors are separated into two different layers with a thin-film Copper shield. We evaluated the sensors for accuracy, crosstalk and long-term drift in human blood-stained cerebrospinal fluid. These in vitro experiments showed that simultaneous temperature and flow measurements with a single lab-on-a-tube device are accurate and reliable over the course of 5 days. It has a resolution of 0.013 °C and 0.18 ml/100 g/min; and achieves an accuracy of 0.1 °C and 5 ml/100 g/min for temperature and flow sensors respectively. The prototype device and techniques developed here establish a foundation for a multi-sensor lab-on-a-tube, enabling versatile multimodality monitoring applications.

Temperature dependent simulation of diamond depleted Schottky PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.more » The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.« less

Transferable and flexible thin film devices for engineering applications

NASA Astrophysics Data System (ADS)

Mutyala, Madhu Santosh K.; Zhou, Jingzhou; Li, Xiaochun

2014-05-01

Thin film devices can be of significance for manufacturing, energy conversion systems, solid state electronics, wireless applications, etc. However, these thin film sensors/devices are normally fabricated on rigid silicon substrates, thus neither flexible nor transferrable for engineering applications. This paper reports an innovative approach to transfer polyimide (PI) embedded thin film devices, which were fabricated on glass, to thin metal foils. Thin film thermocouples (TFTCs) were fabricated on a thin PI film, which was spin coated and cured on a glass substrate. Another layer of PI film was then spin coated again on TFTC/PI and cured to obtain the embedded TFTCs. Assisted by oxygen plasma surface coarsening of the PI film on the glass substrate, the PI embedded TFTC was successfully transferred from the glass substrate to a flexible copper foil. To demonstrate the functionality of the flexible embedded thin film sensors, they were transferred to the sonotrode tip of an ultrasonic metal welding machine for in situ process monitoring. The dynamic temperatures near the sonotrode tip were effectively measured under various ultrasonic vibration amplitudes. This technique of transferring polymer embedded electronic devices onto metal foils yield great potentials for numerous engineering applications.

Microprocessor controlled compliance monitor for eye drop medication

PubMed Central

Hermann, M M; Diestelhorst, M

2006-01-01

Background/aims The effectiveness of a self administered eye drop medication can only be assessed if the compliance is known. The authors studied the specificity and sensitivity of a new microprocessor controlled monitoring device. Methods The monitoring system was conducted by an 8 bit microcontroller for data acquisition and storage with sensors measuring applied pressure to the bottle, temperature, and vertical position. 10 devices were mounted under commercial 10 ml eye drops. Test subjects had to note down each application manually. A total of 15 applications each within 3 days was intended. Results Manual reports confirmed 15 applications for each of the 10 bottles. The monitoring devices detected a total of 149 events; one was missed; comprising a sensitivity of 99%. Two devices registered three applications, which did not appear in the manual protocols, indicating a specificity of about 98%. Refrigerated bottles were correctly identified. The battery lifetime exceeded 60 days. Conclusion The new monitoring device demonstrated a high reliability of the collected compliance data. The important, yet often unknown, influence of compliance in patient care and clinical trials shall be illuminated by the new device. This may lead to a better adapted patient care. Studies will profit from a higher credibility and results will be less influenced by non‐compliance. PMID:16540488

Ultra-Low-Cost Room Temperature SiC Thin Films

NASA Technical Reports Server (NTRS)

Faur, Maria

1997-01-01

The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

Low-temperature technique for thick film resist stabilization and curing

NASA Astrophysics Data System (ADS)

Minter, Jason P.; Wong, Selmer S.; Marlowe, Trey; Ross, Matthew F.; Narcy, Mark E.; Livesay, William R.

1999-06-01

For a range of thick film photoresist applications, including MeV ion implant processing, thin film head manufacturing, and microelectromechanical systems processing, there is a need for a low-temperature method for resist stabilization and curing. Traditional methods of stabilizing or curing resist films have relied on thermal cycling, which may not be desirable due to device temperature limitations or thermally-induced distortion of the resist features.

An FPGA-based instrumentation platform for use at deep cryogenic temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Conway Lamb, I. D.; Colless, J. I.; Hornibrook, J. M.

2016-01-15

We describe the operation of a cryogenic instrumentation platform incorporating commercially available field-programmable gate arrays (FPGAs). The functionality of the FPGAs at temperatures approaching 4 K enables signal routing, multiplexing, and complex digital signal processing in close proximity to cooled devices or detectors within the cryostat. The performance of the FPGAs in a cryogenic environment is evaluated, including clock speed, error rates, and power consumption. Although constructed for the purpose of controlling and reading out quantum computing devices with low latency, the instrument is generic enough to be of broad use in a range of cryogenic applications.

Hybrid photovoltaic and thermoelectric module for high concentration solar system

NASA Astrophysics Data System (ADS)

Tamaki, Ryo; Toyoda, Takeshi; Tamura, Yoichi; Matoba, Akinari; Minamikawa, Toshiharu; Tokuda, Masayuki; Masui, Megumi; Okada, Yoshitaka

2017-09-01

A photovoltaic (PV) and thermoelectric (TE) hybrid module was developed for application to high concentration solar systems. The waste heat from the solar cells under concentrated light illumination was utilized to generate additional electricity by assembling TE devices below the multi-junction solar cells (MJSCs). Considering the high operating temperature of the PV and TE hybrid module compared with conventional concentrator PV modules, the TE device could compensate a part of the MJSC efficiency degradation at high temperature. The performance investigation clarified the feasibility of the hybrid PV and TE module under highly concentrated sunlight illumination.

Compact high reliability fiber coupled laser diodes for avionics and related applications

NASA Astrophysics Data System (ADS)

Daniel, David R.; Richards, Gordon S.; Janssen, Adrian P.; Turley, Stephen E. H.; Stockton, Thomas E.

1993-04-01

This paper describes a newly developed compact high reliability fiber coupled laser diode which is capable of providing enhanced performance under extreme environmental conditions including a very wide operating temperature range. Careful choice of package materials to minimize thermal and mechanical stress, used with proven manufacturing methods, has resulted in highly stable coupling of the optical fiber pigtail to a high performance MOCVD-grown Multi-Quantum Well laser chip. Electro-optical characteristics over temperature are described together with a demonstration of device stability over a range of environmental conditions. Real time device lifetime data is also presented.

Compact acoustic levitation device for studies in fluid dynamics and material science in the laboratory and microgravity

NASA Technical Reports Server (NTRS)

Trinh, E. H.

1985-01-01

An ultrasonic levitation device operable in both ordinary ground-based as well as in potential space-borne laboratories is described together with its various applications in the fields of fluid dynamics, material science, and light scattering. Some of the phenomena which can be studied by this instrument include surface waves on freely suspended liquids, the variations of the surface tension with temperature and contamination, the deep undercooling of materials with the temperature variations of their density and viscosity, and finally some of the optical diffraction properties of transparent substances.

Zinc oxide nano-rods based glucose biosensor devices fabrication

NASA Astrophysics Data System (ADS)

Wahab, H. A.; Salama, A. A.; El Saeid, A. A.; Willander, M.; Nur, O.; Battisha, I. K.

2018-06-01

ZnO is distinguished multifunctional material that has wide applications in biochemical sensor devices. For extracellular measurements, Zinc oxide nano-rods will be deposited on conducting plastic substrate with annealing temperature 150 °C (ZNRP150) and silver wire with annealing temperature 250 °C (ZNRW250), for the extracellular glucose concentration determination with functionalized ZNR-coated biosensors. It was performed in phosphate buffer saline (PBS) over the range from 1 μM to 10 mM and on human blood plasma. The prepared samples crystal structure and surface morphologies were characterized by XRD and field emission scanning electron microscope FESEM respectively.

A micromachined thermally compensated thin film Lamb wave resonator for frequency control and sensing applications

NASA Astrophysics Data System (ADS)

Wingqvist, G.; Arapan, L.; Yantchev, V.; Katardjiev, I.

2009-03-01

Micromachined thin film plate acoustic wave resonators (FPARs) utilizing the lowest order symmetric Lamb wave (S0) propagating in highly textured 2 µm thick aluminium nitride (AlN) membranes have been successfully demonstrated (Yantchev and Katardjiev 2007 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 54 87-95). The proposed devices have a SAW-based design and exhibit Q factors of up to 3000 at a frequency around 900 MHz as well as design flexibility with respect to the required motional resistance. However, a notable drawback of the proposed devices is the non-zero temperature coefficient of frequency (TCF) which lies in the range -20 ppm K-1 to -25 ppm K-1. Thus, despite the promising features demonstrated, further device optimization is required. In this work temperature compensation of thin AlN film Lamb wave resonators is studied and experimentally demonstrated. Temperature compensation while retaining at the same time the device electromechanical coupling is experimentally demonstrated. The zero TCF Lamb wave resonators are fabricated onto composite AlN/SiO2 membranes. Q factors of around 1400 have been measured at a frequency of around 755 MHz. Finally, the impact of technological issues on the device performance is discussed in view of improving the device performance.

Estimation of effective temperatures in a quantum annealer: Towards deep learning applications

NASA Astrophysics Data System (ADS)

Realpe-Gómez, John; Benedetti, Marcello; Perdomo-Ortiz, Alejandro

Sampling is at the core of deep learning and more general machine learning applications; an increase in its efficiency would have a significant impact across several domains. Recently, quantum annealers have been proposed as a potential candidate to speed up these tasks, but several limitations still bar them from being used effectively. One of the main limitations, and the focus of this work, is that using the device's experimentally accessible temperature as a reference for sampling purposes leads to very poor correlation with the Boltzmann distribution it is programmed to sample from. Based on quantum dynamical arguments, one can expect that if the device indeed happens to be sampling from a Boltzmann-like distribution, it will correspond to one with an instance-dependent effective temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling processes. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the quantum-assisted training of Boltzmann machines, which can serve as a building block for deep learning architectures. This work was supported by NASA Ames Research Center.

Evaluation of mobile micro-sensing devices for GPS-based personal exposure monitoring of heat and particulate matter - a matter of context

NASA Astrophysics Data System (ADS)

Ueberham, Maximilian; Schlink, Uwe; Weiland, Ulrike

2017-04-01

The application of mobile micro-sensing devices (MSDs) for human health and personal exposure monitoring (PEM) is an emerging topic of interest in urban air quality research. In the context of climate change, urban population growth and related anthropogenic activities, an increase is expected for the intensity of citizens' exposure to heat and particulate matter (PM). Therefore more focus on the small-scale perspective of spatio-temporal distribution of air quality parameters is important to complement fixed-monitoring site data. Mobile sensors for PEM are useful for both, the investigation of the local distribution of air quality and the personal exposure profiles of individuals moving within their activity spaces. An evaluation of MSDs' accuracy is crucial, before their sophisticated application in measurement campaigns. To detect variations of exposure at small scales, it is even more important to consider the accuracy of Global Positioning System (GPS) devices within different urban structure types (USTs). We present an assessment of the performance of GPS-based MSDs under indoor laboratory conditions and outdoor testing within different USTs. The aim was to evaluate the accuracy of several GPS devices and MSDs for heat and PM 2.5 in relation to reliable standard sensing devices as part of a PhD-project. The performance parameters are summary measures (mean value, standard deviation), correlation (Pearson r), difference measures (mean bias error, mean absolute error, index of agreement) and Bland-Altman plots. The MSDs have been tested in a climate chamber under constant temperature and relative humidity. For temperature MSDs reaction time was tested because of its relevance to detect temperature variations during mobile measurements. For interpretation of the results we considered the MSDs design and technology (e.g. passive vs. active ventilation). GPS-devices have been tested within low/high dense urban residential areas and low/high dense urban green areas and have been compared according to their deviation from the original test route and according to their technology (GPS, A-GPS, GSM, WLAN). In result the performance of the MSDs varies spatially and temporally. Variations mainly depend on the USTs, meteorological conditions, device design and technology. However, the sensors' variation for GPS (3-7m) temperature (1-1.3°C) and PM (800-1100 particles/cu ft) is quite stable over the whole range of value records. Difference measures can be used to consider and correct for mean errors. Furthermore we show that smartphone based GPS-tracking in combination with connected MSDs are a reliable easy-to-use method for PEM. In conclusion our evaluation underpins the applicability of MSDs in combination with GPS for PEM. We observed that especially relative changes in the environmental conditions can be well detected by the devices. Nevertheless, data quality of MSDs remains a relevant concern that needs more investigation especially for applications in citizen science. Eventually the usefulness of mobile MSDs mainly needs to be evaluated depending on the context of application.

Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications.

PubMed

Gabrielyan, Nare; Saranti, Konstantina; Manjunatha, Krishna Nama; Paul, Shashi

2013-02-15

This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid-solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150°C using gallium as the catalyst. This study investigates the structure and the size of the grown silicon nano-structure as functions of growth temperature and catalyst layer thickness. Moreover, the choice of the growth temperature determines the thickness of the catalyst layer to be used.The electrical and optical characteristics of the nano-wires were tested by incorporating them in photovoltaic solar cells, two terminal bistable memory devices and Schottky diode. With further optimisation of the growth parameters, SiNWs, grown by our method, have promising future for incorporation into high performance electronic and optical devices.

Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications

PubMed Central

2013-01-01

This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid–solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150°C using gallium as the catalyst. This study investigates the structure and the size of the grown silicon nano-structure as functions of growth temperature and catalyst layer thickness. Moreover, the choice of the growth temperature determines the thickness of the catalyst layer to be used. The electrical and optical characteristics of the nano-wires were tested by incorporating them in photovoltaic solar cells, two terminal bistable memory devices and Schottky diode. With further optimisation of the growth parameters, SiNWs, grown by our method, have promising future for incorporation into high performance electronic and optical devices. PMID:23413969

Phononic Crystal Tunable via Ferroelectric Phase Transition

NASA Astrophysics Data System (ADS)

Xu, Chaowei; Cai, Feiyan; Xie, Shuhong; Li, Fei; Sun, Rong; Fu, Xianzhu; Xiong, Rengen; Zhang, Yi; Zheng, Hairong; Li, Jiangyu

2015-09-01

Phononic crystals (PCs) consisting of periodic materials with different acoustic properties have potential applications in functional devices. To realize more smart functions, it is desirable to actively control the properties of PCs on demand, ideally within the same fabricated system. Here, we report a tunable PC made of Ba0.7Sr0.3Ti O3 (BST) ceramics, wherein a 20-K temperature change near room temperature results in a 20% frequency shift in the transmission spectra induced by a ferroelectric phase transition. The tunability phenomenon is attributed to the structure-induced resonant excitation of A0 and A1 Lamb modes that exist intrinsically in the uniform BST plate, while these Lamb modes are sensitive to the elastic properties of the plate and can be modulated by temperature in a BST plate around the Curie temperature. The study finds opportunities for creating tunable PCs and enables smart temperature-tuned devices such as the Lamb wave filter or sensor.

Flexible and self-powered temperature-pressure dual-parameter sensors using microstructure-frame-supported organic thermoelectric materials.

PubMed

Zhang, Fengjiao; Zang, Yaping; Huang, Dazhen; Di, Chong-an; Zhu, Daoben

2015-09-21

Skin-like temperature- and pressure-sensing capabilities are essential features for the next generation of artificial intelligent products. Previous studies of e-skin and smart elements have focused on flexible pressure sensors, whereas the simultaneous and sensitive detection of temperature and pressure with a single device remains a challenge. Here we report developing flexible dual-parameter temperature-pressure sensors based on microstructure-frame-supported organic thermoelectric (MFSOTE) materials. The effective transduction of temperature and pressure stimuli into two independent electrical signals permits the instantaneous sensing of temperature and pressure with an accurate temperature resolution of <0.1 K and a high-pressure-sensing sensitivity of up to 28.9 kPa(-1). More importantly, these dual-parameter sensors can be self-powered with outstanding sensing performance. The excellent sensing properties of MFSOTE-based devices, together with their unique advantages of low cost and large-area fabrication, make MFSOTE materials possess promising applications in e-skin and health-monitoring elements.

Flexible and self-powered temperature-pressure dual-parameter sensors using microstructure-frame-supported organic thermoelectric materials

NASA Astrophysics Data System (ADS)

Zhang, Fengjiao; Zang, Yaping; Huang, Dazhen; di, Chong-An; Zhu, Daoben

2015-09-01

Skin-like temperature- and pressure-sensing capabilities are essential features for the next generation of artificial intelligent products. Previous studies of e-skin and smart elements have focused on flexible pressure sensors, whereas the simultaneous and sensitive detection of temperature and pressure with a single device remains a challenge. Here we report developing flexible dual-parameter temperature-pressure sensors based on microstructure-frame-supported organic thermoelectric (MFSOTE) materials. The effective transduction of temperature and pressure stimuli into two independent electrical signals permits the instantaneous sensing of temperature and pressure with an accurate temperature resolution of <0.1 K and a high-pressure-sensing sensitivity of up to 28.9 kPa-1. More importantly, these dual-parameter sensors can be self-powered with outstanding sensing performance. The excellent sensing properties of MFSOTE-based devices, together with their unique advantages of low cost and large-area fabrication, make MFSOTE materials possess promising applications in e-skin and health-monitoring elements.

Development of design, qualification, screening, and application requirements for plastic encapsulated solid-state devices for space applications

NASA Astrophysics Data System (ADS)

1981-12-01

Test data were collected on 1035 plastic encapsulated devices and 75 hermetically scaled control group devices that were purchased from each of five different manufacturers in the categories of (1) low power Schottsky TTL (bipolar) digital circuits; (2) CMOS digital circuits; (3) operational amplifier linear circuits; and (4) NPN transistors. These parts were subjected to three different initial screening conditions, then to extended life testing, to determine any possible advantages or trends for any particular screen. Several tests were carried out in the areas of flammability testing, humidity testing, high pressure steam (auroclave) testing, and high temperature storage testing. Test results are presented. Procurement and application considerations for use of plastic encapsulated semiconductors are presented and a statistical analysis program written to study the log normal distributions resulting from life testing is concluded.

Development of design, qualification, screening, and application requirements for plastic encapsulated solid-state devices for space applications

NASA Technical Reports Server (NTRS)

1981-01-01

Test data were collected on 1035 plastic encapsulated devices and 75 hermetically scaled control group devices that were purchased from each of five different manufacturers in the categories of (1) low power Schottsky TTL (bipolar) digital circuits; (2) CMOS digital circuits; (3) operational amplifier linear circuits; and (4) NPN transistors. These parts were subjected to three different initial screening conditions, then to extended life testing, to determine any possible advantages or trends for any particular screen. Several tests were carried out in the areas of flammability testing, humidity testing, high pressure steam (auroclave) testing, and high temperature storage testing. Test results are presented. Procurement and application considerations for use of plastic encapsulated semiconductors are presented and a statistical analysis program written to study the log normal distributions resulting from life testing is concluded.

Ultraflexible, large-area, physiological temperature sensors for multipoint measurements

PubMed Central

Yokota, Tomoyuki; Inoue, Yusuke; Terakawa, Yuki; Reeder, Jonathan; Kaltenbrunner, Martin; Ware, Taylor; Yang, Kejia; Mabuchi, Kunihiko; Murakawa, Tomohiro; Sekino, Masaki; Voit, Walter; Sekitani, Tsuyoshi; Someya, Takao

2015-01-01

We report a fabrication method for flexible and printable thermal sensors based on composites of semicrystalline acrylate polymers and graphite with a high sensitivity of 20 mK and a high-speed response time of less than 100 ms. These devices exhibit large resistance changes near body temperature under physiological conditions with high repeatability (1,800 times). Device performance is largely unaffected by bending to radii below 700 µm, which allows for conformal application to the surface of living tissue. The sensing temperature can be tuned between 25 °C and 50 °C, which covers all relevant physiological temperatures. Furthermore, we demonstrate flexible active-matrix thermal sensors which can resolve spatial temperature gradients over a large area. With this flexible ultrasensitive temperature sensor we succeeded in the in vivo measurement of cyclic temperatures changes of 0.1 °C in a rat lung during breathing, without interference from constant tissue motion. This result conclusively shows that the lung of a warm-blooded animal maintains surprising temperature stability despite the large difference between core temperature and inhaled air temperature. PMID:26554008

Ultraflexible, large-area, physiological temperature sensors for multipoint measurements.

PubMed

Yokota, Tomoyuki; Inoue, Yusuke; Terakawa, Yuki; Reeder, Jonathan; Kaltenbrunner, Martin; Ware, Taylor; Yang, Kejia; Mabuchi, Kunihiko; Murakawa, Tomohiro; Sekino, Masaki; Voit, Walter; Sekitani, Tsuyoshi; Someya, Takao

2015-11-24

We report a fabrication method for flexible and printable thermal sensors based on composites of semicrystalline acrylate polymers and graphite with a high sensitivity of 20 mK and a high-speed response time of less than 100 ms. These devices exhibit large resistance changes near body temperature under physiological conditions with high repeatability (1,800 times). Device performance is largely unaffected by bending to radii below 700 µm, which allows for conformal application to the surface of living tissue. The sensing temperature can be tuned between 25 °C and 50 °C, which covers all relevant physiological temperatures. Furthermore, we demonstrate flexible active-matrix thermal sensors which can resolve spatial temperature gradients over a large area. With this flexible ultrasensitive temperature sensor we succeeded in the in vivo measurement of cyclic temperatures changes of 0.1 °C in a rat lung during breathing, without interference from constant tissue motion. This result conclusively shows that the lung of a warm-blooded animal maintains surprising temperature stability despite the large difference between core temperature and inhaled air temperature.

Temperature-controlled chameleonlike cloak

DOE PAGES

Peng, Ruiguang; Xiao, Zongqi; Zhao, Qian; ...

2017-03-21

Invisibility cloaking based on transformation optics has brought about unlimited space for reverie. However, the design and fabrication of transformation-optics-based cloaks still remain fairly challenging because of the complicated, even extreme, material prescriptions, including its meticulously engineered anisotropy, inhomogeneity and singularity. And almost all the state-of-the-art cloaking devices work within a narrow and invariable frequency band. Here, we propose a novel mechanism for all-dielectric temperature-controllable cloaks. A prototype device was designed and fabricated with SrTiO 3 ferroelectric cuboids as building blocks, and its cloaking effects were successfully demonstrated, including its frequency-agile invisibility by varying temperature. It revealed that the predesignatedmore » cloaking device based on our proposed strategy could be directly scaled in dimensions to operate at different frequency regions, without the necessity for further efforts of redesign. Finally, our work opens the door towards the realization of tunable cloaking devices for various practical applications and provides a simple strategy to readily extend the cloaking band from microwave to terahertz regimes without the need for reconfiguration.« less

SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

NASA Astrophysics Data System (ADS)

Godignon, P.; Alexandru, M.; Banu, V.; Montserrat, J.; Jorda, X.; Vellvehi, M.; Schmidt, B.; Michel, P.; Millan, J.

2014-08-01

The currently developed SiC electronic devices are more robust to high temperature operation and radiation exposure damage than correspondingly rated Si ones. In order to integrate the existent SiC high power and high temperature electronics into more complex systems, a SiC integrated circuit (IC) technology capable of operation at temperatures substantially above the conventional ones is required. Therefore, this paper is a step towards the development of ICs-control electronics that have to attend the harsh environment power applications. Concretely, we present the development of SiC MESFET-based digital circuitry, able to integrate gate driver for SiC power devices. Furthermore, a planar lateral power MESFET is developed with the aim of its co-integration on the same chip with the previously mentioned SiC digital ICs technology. And finally, experimental results on SiC Schottky-gated devices irradiated with protons and electrons are presented. This development is based on the Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

The strain and thermal induced tunable charging phenomenon in low power flexible memory arrays with a gold nanoparticle monolayer.

PubMed

Zhou, Ye; Han, Su-Ting; Xu, Zong-Xiang; Roy, V A L

2013-03-07

The strain and temperature dependent memory effect of organic memory transistors on plastic substrates has been investigated under ambient conditions. The gold (Au) nanoparticle monolayer was prepared and embedded in an atomic layer deposited aluminum oxide (Al(2)O(3)) as the charge trapping layer. The devices exhibited low operation voltage, reliable memory characteristics and long data retention time. Experimental analysis of the programming and erasing behavior at various bending states showed the relationship between strain and charging capacity. Thermal-induced effects on these memory devices have also been analyzed. The mobility shows ~200% rise and the memory window increases from 1.48 V to 1.8 V when the temperature rises from 20 °C to 80 °C due to thermally activated transport. The retention capability of the devices decreases with the increased working temperature. Our findings provide a better understanding of flexible organic memory transistors under various operating temperatures and validate their applications in various areas such as temperature sensors, temperature memory or advanced electronic circuits. Furthermore, the low temperature processing procedures of the key elements (Au nanoparticle monolayer and Al(2)O(3) dielectric layer) could be potentially integrated with large area flexible electronics.

Smart material platforms for miniaturized devices: implications in disease models and diagnostics.

PubMed

Verma, Ritika; Adhikary, Rishi Rajat; Banerjee, Rinti

2016-05-24

Smart materials are responsive to multiple stimuli like light, temperature, pH and redox reactions with specific changes in state. Various functionalities in miniaturised devices can be achieved through the application of "smart materials" that respond to changes in their surroundings. The change in state of the materials in the presence of a stimulus may be used for on demand alteration of flow patterns in devices, acting as microvalves, as scaffolds for cellular aggregation or as modalities for signal amplification. In this review, we discuss the concepts of smart trigger responsive materials and their applications in miniaturized devices both for organ-on-a-chip disease models and for point-of-care diagnostics. The emphasis is on leveraging the smartness of these materials for example, to allow on demand sample actuation, ion dependent spheroid models for cancer or light dependent contractility of muscle films for organ-on-a-chip applications. The review throws light on the current status, scope for technological enhancements, challenges for translation and future prospects of increased incorporation of smart materials as integral parts of miniaturized devices.

Development of a high capacity bubble domain memory element and related epitaxial garnet materials for application in spacecraft data recorders. Item 2: The optimization of material-device parameters for application in bubble domain memory elements for spacecraft data recorders

NASA Technical Reports Server (NTRS)

Besser, P. J.

1976-01-01

Bubble domain materials and devices are discussed. One of the materials development goals was a materials system suitable for operation of 16 micrometer period bubble domain devices at 150 kHz over the temperature range -10 C to +60 C. Several material compositions and hard bubble suppression techniques were characterized and the most promising candidates were evaluated in device structures. The technique of pulsed laser stroboscopic microscopy was used to characterize bubble dynamic properties and device performance at 150 kHz. Techniques for large area LPE film growth were developed as a separate task. Device studies included detector optimization, passive replicator design and test and on-chip bridge evaluation. As a technology demonstration an 8 chip memory cell was designed, tested and delivered. The memory elements used in the cell were 10 kilobit serial registers.

Bottom-up realization and electrical characterization of a graphene-based device.

PubMed

Maffucci, A; Micciulla, F; Cataldo, A; Miano, G; Bellucci, S

2016-03-04

We propose a bottom-up procedure to fabricate an easy-to-engineer graphene-based device, consisting of a microstrip-like circuit where few-layer graphene nanoplatelets are used to contact two copper electrodes. The graphene nanoplatelets are obtained by the microwave irradiation of intercalated graphite, i.e., an environmentally friendly, fast and low-cost procedure. The contact is created by a bottom-up process, driven by the application of a DC electrical field in the gap between the electrodes, yielding the formation of a graphene carpet. The electrical resistance of the device has been measured as a function of the gap length and device temperature. The possible use of this device as a gas sensor is demonstrated by measuring the sensitivity of its electrical resistance to the presence of gas. The measured results demonstrate a good degree of reproducibility in the fabrication process, and the competitive performance of devices, thus making the proposed technique potentially attractive for industrial applications.

Resonant tunnelling and negative differential conductance in graphene transistors

PubMed Central

Britnell, L.; Gorbachev, R. V.; Geim, A. K.; Ponomarenko, L. A.; Mishchenko, A.; Greenaway, M. T.; Fromhold, T. M.; Novoselov, K. S.; Eaves, L.

2013-01-01

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene’s unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices. PMID:23653206

Experimental investigation on electrical characteristics and dose measurement of dielectric barrier discharge plasma device used for therapeutic application

NASA Astrophysics Data System (ADS)

Shahbazi Rad, Zahra; Abbasi Davani, Fereydoun

2017-04-01

In this research, a Dielectric Barrier Discharge (DBD) plasma device operating in air has been made. The electrical characteristics of this device like instantaneous power, dissipated power, and discharge capacitance have been measured. Also, the effects of applied voltage on the dissipated power and discharge capacitance of the device have been investigated. The determination of electrical parameters is important in DBD plasma device used in living tissue treatment for choosing the proper treatment doses and preventing the destructive effects. The non-thermal atmospheric pressure DBD plasma source was applied for studying the acceleration of blood coagulation time, in vitro and wound healing time, in vivo. The citrated blood drops coagulated within 5 s treatment time by DBD plasma. The effects of plasma temperature and electric field on blood coagulation have been studied as an affirmation of the applicability of the constructed device. Also, the effect of constructed DBD plasma on wound healing acceleration has been investigated.

Experimental investigation on electrical characteristics and dose measurement of dielectric barrier discharge plasma device used for therapeutic application.

PubMed

Shahbazi Rad, Zahra; Abbasi Davani, Fereydoun

2017-04-01

In this research, a Dielectric Barrier Discharge (DBD) plasma device operating in air has been made. The electrical characteristics of this device like instantaneous power, dissipated power, and discharge capacitance have been measured. Also, the effects of applied voltage on the dissipated power and discharge capacitance of the device have been investigated. The determination of electrical parameters is important in DBD plasma device used in living tissue treatment for choosing the proper treatment doses and preventing the destructive effects. The non-thermal atmospheric pressure DBD plasma source was applied for studying the acceleration of blood coagulation time, in vitro and wound healing time, in vivo. The citrated blood drops coagulated within 5 s treatment time by DBD plasma. The effects of plasma temperature and electric field on blood coagulation have been studied as an affirmation of the applicability of the constructed device. Also, the effect of constructed DBD plasma on wound healing acceleration has been investigated.

Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications

PubMed Central

Socratous, Josephine; Banger, Kulbinder K; Vaynzof, Yana; Sadhanala, Aditya; Brown, Adam D; Sepe, Alessandro; Steiner, Ullrich; Sirringhaus, Henning

2015-01-01

The electronic structure of low temperature, solution-processed indium–zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm2 V−1 s−1 is achievable after annealing in air above typically 250 °C but performance decreases rapidly when annealing temperatures ≤200 °C are used. Here, the electronic structure of low temperature, solution-processed oxide thin films as a function of annealing temperature and environment using a combination of X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and photothermal deflection spectroscopy is investigated. The drop-off in performance at temperatures ≤200 °C to incomplete conversion of metal hydroxide species into the fully coordinated oxide is attributed. The effect of an additional vacuum annealing step, which is beneficial if performed for short times at low temperatures, but leads to catastrophic device failure if performed at too high temperatures or for too long is also investigated. Evidence is found that during vacuum annealing, the workfunction increases and a large concentration of sub-bandgap defect states (re)appears. These results demonstrate that good devices can only be achieved in low temperature, solution-processed oxides if a significant concentration of acceptor states below the conduction band minimum is compensated or passivated by shallow hydrogen and oxygen vacancy-induced donor levels. PMID:26190964

Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications.

PubMed

Socratous, Josephine; Banger, Kulbinder K; Vaynzof, Yana; Sadhanala, Aditya; Brown, Adam D; Sepe, Alessandro; Steiner, Ullrich; Sirringhaus, Henning

2015-03-25

The electronic structure of low temperature, solution-processed indium-zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm 2 V -1 s -1 is achievable after annealing in air above typically 250 °C but performance decreases rapidly when annealing temperatures ≤200 °C are used. Here, the electronic structure of low temperature, solution-processed oxide thin films as a function of annealing temperature and environment using a combination of X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and photothermal deflection spectroscopy is investigated. The drop-off in performance at temperatures ≤200 °C to incomplete conversion of metal hydroxide species into the fully coordinated oxide is attributed. The effect of an additional vacuum annealing step, which is beneficial if performed for short times at low temperatures, but leads to catastrophic device failure if performed at too high temperatures or for too long is also investigated. Evidence is found that during vacuum annealing, the workfunction increases and a large concentration of sub-bandgap defect states (re)appears. These results demonstrate that good devices can only be achieved in low temperature, solution-processed oxides if a significant concentration of acceptor states below the conduction band minimum is compensated or passivated by shallow hydrogen and oxygen vacancy-induced donor levels.

A multi-state synthetic ferrimagnet with controllable switching near room temperature

NASA Astrophysics Data System (ADS)

Franco, A. F.; Landeros, P.

2018-06-01

Ferrite composites with temperature-induced magnetization reversal, and synthetic ferrimagnets and antiferromagnets have been of great interest to the scientific community due to their uncommon thermal properties and potential applications in magnetic storage, spintronic devices, and several other fields. One of the advantages of these structures is the strong antiferromagnetic coupling, which stabilizes the magnetization state and gives access to interesting static and dynamical magnetic behaviors. Some of their drawbacks lie in that it is difficult to induce temperature-induced magnetization reversal at room temperature in composites, and that the strong interaction makes it difficult to induce a parallel magnetization state (and thus a high magnetic moment). In this work, we study numerically the magnetization behaviour of a Cu(1 0 0)/Ni/Pt/[Co/Pt]4 synthetic ferrimagnet and show that is possible to revert the sign of its magnetization by varying the temperature in ranges around room temperature. We also show that the four parallel and antiparallel magnetization states are stable at temperatures up to 360 K, and demonstrate that it is possible to change deterministically between these states by increasing the temperature of the device and/or applying a magnetic field, showcasing simultaneous non-hysteretic and hysteretic switching processes induced by temperature. Thus, this structure opens the possibility to have reconfigurable magnetic devices with multiple purposes based on the nature of the different switching events and the interplay between them.

Light-controlling, flexible and transparent ethanol gas sensor based on ZnO nanoparticles for wearable devices

PubMed Central

Zheng, Z. Q.; Yao, J. D.; Wang, B.; Yang, G. W.

2015-01-01

In recent years, owing to the significant applications of health monitoring, wearable electronic devices such as smart watches, smart glass and wearable cameras have been growing rapidly. Gas sensor is an important part of wearable electronic devices for detecting pollutant, toxic, and combustible gases. However, in order to apply to wearable electronic devices, the gas sensor needs flexible, transparent, and working at room temperature, which are not available for traditional gas sensors. Here, we for the first time fabricate a light-controlling, flexible, transparentand working at room-temperature ethanol gas sensor by using commercial ZnO nanoparticles. The fabricated sensor not only exhibits fast and excellent photoresponse, but also shows high sensing response to ethanol under UV irradiation. Meanwhile, its transmittance exceeds 62% in the visible spectral range, and the sensing performance keeps the same even bent it at a curvature angle of 90o. Additionally, using commercial ZnO nanoparticles provides a facile and low-cost route to fabricate wearable electronic devices. PMID:26076705

Light-controlling, flexible and transparent ethanol gas sensor based on ZnO nanoparticles for wearable devices.

PubMed

Zheng, Z Q; Yao, J D; Wang, B; Yang, G W

2015-06-16

In recent years, owing to the significant applications of health monitoring, wearable electronic devices such as smart watches, smart glass and wearable cameras have been growing rapidly. Gas sensor is an important part of wearable electronic devices for detecting pollutant, toxic, and combustible gases. However, in order to apply to wearable electronic devices, the gas sensor needs flexible, transparent, and working at room temperature, which are not available for traditional gas sensors. Here, we for the first time fabricate a light-controlling, flexible, transparent, and working at room-temperature ethanol gas sensor by using commercial ZnO nanoparticles. The fabricated sensor not only exhibits fast and excellent photoresponse, but also shows high sensing response to ethanol under UV irradiation. Meanwhile, its transmittance exceeds 62% in the visible spectral range, and the sensing performance keeps the same even bent it at a curvature angle of 90(o). Additionally, using commercial ZnO nanoparticles provides a facile and low-cost route to fabricate wearable electronic devices.

Tunable reflectance of an inverse opal-chiral nematic liquid crystal multilayer device by electric- or thermal-control.

PubMed

Zhang, Yuxian; Zhao, Weidong; Wen, Jiahui; Li, Jinming; Yang, Zhou; Wang, Dong; Cao, Hui; Quan, Maohua

2017-05-21

A new type of electric- or thermal-responsive multilayer device composed of SiO 2 bilayer inverse opal (IOP) and chiral nematic liquid crystals (N*LCs) was developed. Bilayer IOP was fabricated by layer-by-layer assembly of polystyrene (PS) spheres with two different sizes and showed a reflectance in an extended range of the near-infrared region. Furthermore, the electrically or thermally tunable reflectance of the bilayer-IOP-N*LC device was investigated. The device exhibited the photonic bandgap (PBG) of the N*LC-IOP composite structure with the application of an electric field (voltage-on), while it presented the reflectance of N*LCs without an electric field (voltage-off) and the electrically-responsive behaviour could be reversibly switched. Besides, the device exhibited a gradient redshift of reflectance as temperature increased below the clearing point (T C ) while it showed the PBG of the N*LC-IOP composite structure when the temperature was above T C .

Wireless sensor for temperature and humidity measurement

NASA Astrophysics Data System (ADS)

Drumea, Andrei; Svasta, Paul

2010-11-01

Temperature and humidity sensors have a broad range of applications, from heating and ventilation of houses to controlled drying of fruits, vegetables or meat in food industry. Modern sensors are integrated devices, usually MEMS, factory-calibrated and with digital output of measured parameters. They can have power down modes for reduced energy consumption. Such an integrated device allows the implementation of a battery powered wireless sensor when coupled with a low power microcontroller and a radio subsystem. A radio sensor can work independently or together with others in a radio network. Presented paper focuses mainly on measurement and construction aspects of sensors for temperature and humidity designed and implemented by authors; network aspects (communication between two or more sensors) are not analyzed.

Electrical characteristics of Graphene based Field Effect Transistor (GFET) biosensor for ADH detection

NASA Astrophysics Data System (ADS)

Selvarajan, Reena Sri; Hamzah, Azrul Azlan; Majlis, Burhanuddin Yeop

2017-08-01

First pristine graphene was successfully produced by mechanical exfoliation and electrically characterized in 2004 by Andre Geim and Konstantin Novoselov at University of Manchester. Since its discovery in 2004, graphene also known as `super' material that has enticed many researchers and engineers to explore its potential in ultrasensitive detection of analytes in biosensing applications. Among myriad reported sensors, biosensors based on field effect transistors (FETs) have attracted much attention. Thus, implementing graphene as conducting channel material hastens the opportunities for production of ultrasensitive biosensors for future device applications. Herein, we have reported electrical characteristics of graphene based field effect transistor (GFET) for ADH detection. GFET was modelled and simulated using Lumerical DEVICE charge transport solver (DEVICE CT). Electrical characteristics comprising of transfer and output characteristics curves are reported in this study. The device shows ambipolar curve and achieved a minimum conductivity of 0.23912 e5A at Dirac point. However, the curve shifts to the left and introduces significant changes in the minimum conductivity as drain voltage is increased. Output characteristics of GFET exhibits linear Id - Vd dependence characteristics for gate voltage ranging from 0 to 1.5 V. In addition, behavior of electrical transport through GFET was analyzed for various simulation temperatures. It clearly proves that the electrical transport in GFET is dependent on the simulation temperature as it may vary the maximum resistance in channel of the device. Therefore, this unique electrical characteristics of GFET makes it as a promising candidate for ultrasensitive detection of small biomolecules such as ADH in biosensing applications.

Amino-functionalized sub-40 nm ultrathin Ag/ZnO transparent electrodes for flexible polymer dispersed liquid crystal devices

NASA Astrophysics Data System (ADS)

Huang, Jinhua; Lu, Yuehui; Wu, Wenxuan; Li, Jia; Zhang, Xianpeng; Zhu, Chaoting; Yang, Ye; Xu, Feng; Song, Weijie

2017-11-01

Various flexible transparent conducting electrodes (FTCEs) have been studied for promising applications in flexible optoelectronic devices, but there are still challenges in achieving higher transparency and conductivity, lower thickness, better mechanical flexibility, and lower preparation temperatures. In this work, we prepared a sub-40 nm Ag(9 nm)/ZnO(30 nm) FTCE at room temperature, where each layer played a relatively independent role in the tailoring of the optoelectronic properties. A continuous and smooth 9-nm Ag thin film was grown on amino-functionalized glass and polyethylene terephthalate (PET) substrates to provide good conductivity. A 30-nm ZnO cladding, as an antireflection layer, further improved the transmittance while hardly affecting the conductivity. The room-temperature grown sub-40 nm Ag/ZnO thin films on PET substrate exhibited a transmittance of 88.6% at 550 nm and a sheet resistance of 7.6 Ω.sq-1, which were superior to those of the commercial ITO. The facile preparation benefits the integration of FTCEs into various flexible optoelectronic devices, where the excellent performance of the sub-40 nm Ag/ZnO FTCEs in a flexible polymer dispersed liquid crystal device was demonstrated. Sub-40 nm Ag/ZnO FTCEs that have the characteristics of simple structure, room-temperature preparation, and easily tailored optoelectronic properties would provide flexible optoelectronic devices with more degrees of freedom.

A Novel Wireless Wearable Volatile Organic Compound (VOC) Monitoring Device with Disposable Sensors.

PubMed

Deng, Yue; Chen, Cheng; Xian, Xiaojun; Tsow, Francis; Verma, Gaurav; McConnell, Rob; Fruin, Scott; Tao, Nongjian; Forzani, Erica S

2016-12-03

A novel portable wireless volatile organic compound (VOC) monitoring device with disposable sensors is presented. The device is miniaturized, light, easy-to-use, and cost-effective. Different field tests have been carried out to identify the operational, analytical, and functional performance of the device and its sensors. The device was compared to a commercial photo-ionization detector, gas chromatography-mass spectrometry, and carbon monoxide detector. In addition, environmental operational conditions, such as barometric change, temperature change and wind conditions were also tested to evaluate the device performance. The multiple comparisons and tests indicate that the proposed VOC device is adequate to characterize personal exposure in many real-world scenarios and is applicable for personal daily use.

A Novel Wireless Wearable Volatile Organic Compound (VOC) Monitoring Device with Disposable Sensors

PubMed Central

Deng, Yue; Chen, Cheng; Xian, Xiaojun; Tsow, Francis; Verma, Gaurav; McConnell, Rob; Fruin, Scott; Tao, Nongjian; Forzani, Erica S.

2016-01-01

A novel portable wireless volatile organic compound (VOC) monitoring device with disposable sensors is presented. The device is miniaturized, light, easy-to-use, and cost-effective. Different field tests have been carried out to identify the operational, analytical, and functional performance of the device and its sensors. The device was compared to a commercial photo-ionization detector, gas chromatography-mass spectrometry, and carbon monoxide detector. In addition, environmental operational conditions, such as barometric change, temperature change and wind conditions were also tested to evaluate the device performance. The multiple comparisons and tests indicate that the proposed VOC device is adequate to characterize personal exposure in many real-world scenarios and is applicable for personal daily use. PMID:27918484

Research briefing on high-temperature superconductivity

NASA Astrophysics Data System (ADS)

1987-10-01

The research briefing was prepared in response to the exciting developments in superconductivity in ceramic oxide materials announced earlier in 1987. The panel's specific charge was to examine not only the scientific opportunities in high-temperature superconductivity but also the barriers to commercial exploitation. While the base of experimental knowledge on the superconductors is growing rapidly, there is as yet no generally accepted theoretical explanation of their behavior. The fabrication and processing challenges presented by the materials suggest that the period or precommercial exploration for applications will probably extend for a decade or more. Near term prospects for applications include magnetic shielding, the voltage standard, superconducting quantum interference devices, infrared sensors, microwave devices, and analog signal processing. The panel also identified a number of longer-term prospects in high-field and large-scale applications, and in electronics. The United States' competitive position in the field is discussed, major scientific and technological objectives for research and development identified, and concludes with a series of recommendations.

Electrostatic melting in a single-molecule field-effect transistor with applications in genomic identification

PubMed Central

Vernick, Sefi; Trocchia, Scott M.; Warren, Steven B.; Young, Erik F.; Bouilly, Delphine; Gonzalez, Ruben L.; Nuckolls, Colin; Shepard, Kenneth L.

2017-01-01

The study of biomolecular interactions at the single-molecule level holds great potential for both basic science and biotechnology applications. Single-molecule studies often rely on fluorescence-based reporting, with signal levels limited by photon emission from single optical reporters. The point-functionalized carbon nanotube transistor, known as the single-molecule field-effect transistor, is a bioelectronics alternative based on intrinsic molecular charge that offers significantly higher signal levels for detection. Such devices are effective for characterizing DNA hybridization kinetics and thermodynamics and enabling emerging applications in genomic identification. In this work, we show that hybridization kinetics can be directly controlled by electrostatic bias applied between the device and the surrounding electrolyte. We perform the first single-molecule experiments demonstrating the use of electrostatics to control molecular binding. Using bias as a proxy for temperature, we demonstrate the feasibility of detecting various concentrations of 20-nt target sequences from the Ebolavirus nucleoprotein gene in a constant-temperature environment. PMID:28516911

Temperature estimation from molecular nitrogen UV spectra in atmospheric pressure plasmas

NASA Astrophysics Data System (ADS)

Pepper, Keenan; Kim, Yongho; Kim, Jihun

2008-11-01

Atmospheric pressure plasmas have many potential applications to fuel processing, surface treatment, and manipulation of chemical reactions. These plasmas are often non-thermal, which means different species are not in equilibrium and have different effective temperatures. This is critical for many applications because it allows high concentrations of reactive species to be produced without using a prohibitive amount of power. In the present work, numerical software was developed to estimate the vibrational and rotational temperatures (Tvib and Trot) of N2 molecules from their ultraviolet emission spectra. The electron temperature Te can also be estimated by comparing the N2 spectrum to that of the N2^+ molecular ion. This technique is applied to several plasma sources including audio frequency, RF, and microwave devices. The results are presented and their implications for practical applications are discussed.

Dielectric Performance of a High Purity HTCC Alumina at High Temperatures - a Comparison Study with Other Polycrystalline Alumina

NASA Technical Reports Server (NTRS)

Chen, Liangyu

2014-01-01

A very high purity (99.99+%) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this alumina material for co-firing processing. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96% polycrystalline alumina (96% Al2O3), where 96% alumina was used as the benchmark. A prototype packaging system based on regular 96% alumina with Au thickfilm metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500 C. In order to evaluate this new high purity HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96% alumina and a previously tested LTCC alumina from room temperature to 550 C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96% alumina and a selected LTCC alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.

A Coaxial Cable Fabry-Perot Interferometer for Sensing Applications

PubMed Central

Huang, Jie; Wang, Tao; Hua, Lei; Fan, Jun; Xiao, Hai; Luo, Ming

2013-01-01

This paper reports a novel coaxial cable Fabry-Perot interferometer for sensing applications. The sensor is fabricated by drilling two holes half-way into a coaxial cable. The device physics was described. The temperature and strain responses of the sensor were tested. The measurement error was calculated and analyzed. PMID:24212121

Inorganic Photovoltaics Materials and Devices: Past, Present, and Future

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Bailey, Sheila G.; Rafaelle, Ryne P.

2005-01-01

This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamichhane, Ranjan; Ericson, Milton Nance; Frank, Steven Shane

2014-01-01

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz tomore » 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.« less

Negative hydrogen ions in a linear helicon plasma device

NASA Astrophysics Data System (ADS)

Corr, Cormac; Santoso, Jesse; Samuell, Cameron; Willett, Hannah; Manoharan, Rounak; O'Byrne, Sean

2015-09-01

Low-pressure negative ion sources are of crucial importance to the development of high-energy (>1 MeV) neutral beam injection systems for the ITER experimental tokamak device. Due to their high power coupling efficiency and high plasma densities, helicon devices may be able to reduce power requirements and potentially remove the need for caesium. In helicon sources, the RF power can be coupled efficiently into the plasma and it has been previously observed that the application of a small magnetic field can lead to a significant increase in the plasma density. In this work, we investigate negative ion dynamics in a high-power (20 kW) helicon plasma source. The negative ion fraction is measured by probe-based laser photodetachment, electron density and temperature are determined by a Langmuir probe and tuneable diode laser absorption spectroscopy is used to determine the density of the H(n = 2) excited atomic state and the gas temperature. The negative ion density and excited atomic hydrogen density display a maximum at a low applied magnetic field of 3 mT, while the electron temperature displays a minimum. The negative ion density can be increased by a factor of 8 with the application of the magnetic field. Spatial and temporal measurements will also be presented. The Australian Research Grants Council is acknowledged for funding.

Asymmetric structured microfiber-based temperature sensor

NASA Astrophysics Data System (ADS)

Xian, Pei; Feng, Guoying; Dai, Shenyu; Zhou, Shouhuan

2017-04-01

A temperature sensor formed by a cascaded sphere and an abrupt taper, together in a standard single-mode fiber, was developed. The dip of the measured spectrum signal shifted obviously when the surrounding temperature changed. Measurement sensitivity to 18.36 pm/°C was shown with the surrounding temperature ranging from 35°C to 395°C. Due to its compact size and all-fiber configuration, the proposed sensor has the advantages of simplicity and low-cost fabrication, thus the device would find potential applications in sensing fields.

Miniature microwave applicator for murine bladder hyperthermia studies.

PubMed

Salahi, Sara; Maccarini, Paolo F; Rodrigues, Dario B; Etienne, Wiguins; Landon, Chelsea D; Inman, Brant A; Dewhirst, Mark W; Stauffer, Paul R

2012-01-01

Novel combinations of heat with chemotherapeutic agents are often studied in murine tumour models. Currently, no device exists to selectively heat small tumours at depth in mice. In this project we modelled, built and tested a miniature microwave heat applicator, the physical dimensions of which can be scaled to adjust the volume and depth of heating to focus on the tumour volume. Of particular interest is a device that can selectively heat murine bladder. Using Avizo(®) segmentation software, we created a numerical mouse model based on micro-MRI scan data. The model was imported into HFSS™ (Ansys) simulation software and parametric studies were performed to optimise the dimensions of a water-loaded circular waveguide for selective power deposition inside a 0.15 mL bladder. A working prototype was constructed operating at 2.45 GHz. Heating performance was characterised by mapping fibre-optic temperature sensors along catheters inserted at depths of 0-1 mm (subcutaneous), 2-3 mm (vaginal), and 4-5 mm (rectal) below the abdominal wall, with the mid depth catheter adjacent to the bladder. Core temperature was monitored orally. Thermal measurements confirm the simulations which demonstrate that this applicator can provide local heating at depth in small animals. Measured temperatures in murine pelvis show well-localised bladder heating to 42-43°C while maintaining normothermic skin and core temperatures. Simulation techniques facilitate the design optimisation of microwave antennas for use in pre-clinical applications such as localised tumour heating in small animals. Laboratory measurements demonstrate the effectiveness of a new miniature water-coupled microwave applicator for localised heating of murine bladder.

From dead leaves to sustainable organic resistive switching memory.

PubMed

Sun, Bai; Zhu, Shouhui; Mao, Shuangsuo; Zheng, Pingping; Xia, Yudong; Yang, Feng; Lei, Ming; Zhao, Yong

2018-03-01

An environmental-friendly, sustainable, pollution-free, biodegradable, flexible and wearable electronic device hold advanced potential applications. Here, an organic resistive switching memory device with Ag/Leaves/Ti/PET structure on a flexible polyethylene terephthalate (PET) substrate was fabricated for the first time. We observed an obvious resistive switching memory characteristic with large switching resistance ratio and stable cycle performance at room temperature. This work demonstrates that leaves, a useless waste, can be properly treated to make useful devices. Furthermore, the as-fabricated devices can be degraded naturally without damage to the environment. Copyright © 2017 Elsevier Inc. All rights reserved.

Fabricating photoswitches and field-effect transistors from self-assembled tetra(2-isopropyl-5-methyphenoxy) copper phthalocyanines nanowires.

PubMed

Cheng, Chuanwei; Gao, Junshan; Xu, Guoyue; Zhang, Haiqian; Li, Yingying; Luo, Yan

2009-05-01

Tetra(2-isopropyl-5-methyphenoxy) copper phthalocyanine (CuPc) nanowires synthesized by a facile, low temperature self-assembled route, were incorporated into nano-devices: photoswitch and organic field-effect transistor. The devices were capable of switching on/off reversibly and fast by turning the 808 nm infrared light on/off. And the carrier mobility micro of CuPc nanowires incorporated in the devices was -0.02 cm2/V x s. The prelimenary results in this study show the potential application of metal phthalocyanine nanowires in low-cost fabrication of nano photo-electric devices.

77 FR 25151 - Notice of Intent To Grant Exclusive Patent Licenses to TroCept Micro Ltd. L.L.C.

Federal Register 2010, 2011, 2012, 2013, 2014

2012-04-27

... based composite Ohmic contact to n-SiC for high temperature and high power device applications;'' July 6... increase the voltage blocked in the off state of a high power semiconductor device;'' December 4, 2007. 7... fifteen (15) days from the date of this published notice, the U.S. Army Research Laboratory receives...

High temperature superconductors for magnetic suspension applications

NASA Technical Reports Server (NTRS)

Mcmichael, C. K.; Cooley, R. S.; Chen, Q. Y.; Ma, K. B.; Lamb, M. A.; Meng, R. L.; Chu, C. W.; Chu, W. K.

1994-01-01

High temperature superconductors (HTS) hold the promise for applications in magnetic levitation bearings, vibration damping, and torque coupling. Traditional magnetic suspension systems require active feedback and vibration controls in which power consumption and low frequency vibration are among the major engineering concerns. HTS materials have been demonstrated to be an enabling approach towards such problems due to their flux trapping properties. In our laboratory at TCSUH, we have been conducting a series of experiments to explore various mechanical applications using HTS. We have constructed a 30 lb. model flywheel levitated by a hybrid superconducting magnetic bearing (HSMB). We are also developing a levitated and vibration-dampled platform for high precision instrumentation. These applications would be ideal for space usages where ambient temperature is adequate for HTS to operate properly under greatly reduced cryogenic requirements. We will give a general overview of these potential applications and discuss the operating principles of the HTS devices we have developed.

Thermo-optical characterization of fluorescent rhodamine B based temperature-sensitive nanosensors using a CMOS MEMS micro-hotplate☆

PubMed Central

Chauhan, Veeren M.; Hopper, Richard H.; Ali, Syed Z.; King, Emma M.; Udrea, Florin; Oxley, Chris H.; Aylott, Jonathan W.

2014-01-01

A custom designed microelectromechanical systems (MEMS) micro-hotplate, capable of operating at high temperatures (up to 700 °C), was used to thermo-optically characterize fluorescent temperature-sensitive nanosensors. The nanosensors, 550 nm in diameter, are composed of temperature-sensitive rhodamine B (RhB) fluorophore which was conjugated to an inert silica sol–gel matrix. Temperature-sensitive nanosensors were dispersed and dried across the surface of the MEMS micro-hotplate, which was mounted in the slide holder of a fluorescence confocal microscope. Through electrical control of the MEMS micro-hotplate, temperature induced changes in fluorescence intensity of the nanosensors was measured over a wide temperature range. The fluorescence response of all nanosensors dispersed across the surface of the MEMS device was found to decrease in an exponential manner by 94%, when the temperature was increased from 25 °C to 145 °C. The fluorescence response of all dispersed nanosensors across the whole surface of the MEMS device and individual nanosensors, using line profile analysis, were not statistically different (p < 0.05). The MEMS device used for this study could prove to be a reliable, low cost, low power and high temperature micro-hotplate for the thermo-optical characterisation of sub-micron sized particles. The temperature-sensitive nanosensors could find potential application in the measurement of temperature in biological and micro-electrical systems. PMID:25844025

Fabrication and electrical characterization of Al/diazo compound containing polyoxy chain/p-Si device structure

NASA Astrophysics Data System (ADS)

Birel, Ozgul; Kavasoglu, Nese; Kavasoglu, A. Sertap; Dincalp, Haluk; Metin, Bengul

2013-03-01

Diazo-compounds are important class of chemical compounds in terms of optical and electronic properties which make them potentially attractive for device applications. Diazo compound containing polyoxy chain has been deposited on p-Si. Current-voltage characteristics of Al/diazo compound containing polyoxy chain/p-Si structure present rectifying behaviour. The Schottky barrier height (SBH), diode factor (n), reverse saturation current (Io), interface state density (Nss) of Al/diazo compound containing polyoxy chain/p-Si structure have been calculated from experimental forward bias current-voltage data measured in the temperature range 100-320 K and capacitance-voltage data measured at room temperature and 1 MHz. The calculated values of SBH have ranged from 0.041 and 0.151 eV for the high and low temperature regions. Diode factor values fluctuate between the values 14 and 18 with temperature. Such a high diode factors stem from disordered interface layer in a junction structure as stated by Brötzmann et al. [M. Brötzmann, U. Vetter, H. Hofsäss, J. Appl. Phys. 106 (2009) 063704]. The calculated values of saturation current have ranged from 3×10-11 A to 2.79×10-7 A and interface state density have ranged from 5×1011 eV-1 cm-2 and 4×1013 eV-1 cm-2 as temperature increases. Results show that Al/diazo compound containing polyoxy chain/p-Si structure is a valuable candidate for device applications in terms of low reverse saturation current and low interface state density.

Time-weighted average water sampling with a solid-phase microextraction device.

PubMed

Ouyang, Gangfeng; Chen, Yong; Pawliszyn, Janusz

2005-11-15

A fiber-in-needle SPME device was developed and investigated for time-weighted average water sampling. The device was designed so that the overall mass-transfer resistance is contained within the static water inside the needle, which ensures that mass uptake could be predicted with Fick's first law of diffusion and the sampling rate is less affected by water turbulence. The device possesses all of the advantages of commercialized devices, in addition to needle filling and replacement ease. Laboratory calibration with deployment of the device to a flow-through system demonstrated that there was a linear mass uptake for up to 12 days, and the linear range could be longer. PDMS coating is assumed to be a perfect zero sink for most polycyclic aromatic hydrocarbons, except naphthalene. The effect of water temperature was also investigated. Under normal field conditions, the change of mass uptake rate with temperature was negligible. To facilitate the convenience for long-term water sampling, a new standard aqueous generator was introduced. This study extended the application of SPME technology for long-term water sampling.

Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

PubMed

Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

2015-01-14

The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

Application of cyclic fluorocarbon/argon discharges to device patterning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik, E-mail: dmetzler@umd.edu; Uppireddi, Kishore; Bruce, Robert L.

2016-01-15

With increasing demands on device patterning to achieve smaller critical dimensions and pitches for the 5 nm node and beyond, the need for atomic layer etching (ALE) is steadily increasing. In this work, a cyclic fluorocarbon/Ar plasma is successfully used for ALE patterning in a manufacturing scale reactor. Self-limited etching of silicon oxide is observed. The impact of various process parameters on the etch performance is established. The substrate temperature has been shown to play an especially significant role, with lower temperatures leading to higher selectivity and lower etch rates, but worse pattern fidelity. The cyclic ALE approach established with thismore » work is shown to have great potential for small scale device patterning, showing self-limited etching, improved uniformity and resist mask performance.« less

Holmium hafnate: An emerging electronic device material

NASA Astrophysics Data System (ADS)

Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Scott, James F.; Katiyar, Ram S.

2015-03-01

We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ˜20 and very low dielectric loss of ˜0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

Application of cyclic fluorocarbon/argon discharges to device patterning

DOE PAGES

Metzler, Dominik; Uppiredi, Kishore; Bruce, Robert L.; ...

2015-11-13

With increasing demands on device patterning to achieve smaller critical dimensions and pitches for the 5nm node and beyond, the need for atomic layer etching (ALE) is steadily increasing. In this study, a cyclic fluorocarbon/Ar plasma is successfully used for ALE patterning in a manufacturing scale reactor. Self-limited etching of silicon oxide is observed. The impact of various process parameters on the etch performance is established. The substrate temperature has been shown to play an especially significant role, with lower temperatures leading to higher selectivity and lower etch rates, but worse pattern fidelity. The cyclic ALE approach established with thismore » work is shown to have great potential for small scale device patterning, showing self-limited etching, improved uniformity and resist mask performance.« less

Zirconium vanadium chromium alloy

DOEpatents

Mendelsohn, M.H.; Gruen, D.M.

1980-10-14

A ternary intermetallic compound having the formula Zr(V/sub 1-x/Cr/sub x/)/sub 2/ where x is in the range of 0.01 to 0.90 is capable of reversibly sorbing hydrogen at temperatures ranging from room temperature to 200/sup 0/C, at pressures down to 10/sup -6/ torr. The compound is suitable for use as a hydrogen getter in low pressure, high temperature applications such as magnetic confinement fusion devices.

Low temperature cured poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Yoshida, Naofumi; Bermundo, Juan Paolo; Ishikawa, Yasuaki; Nonaka, Toshiaki; Taniguchi, Katsuto; Uraoka, Yukiharu

2018-05-01

Low temperature processable passivation materials are necessary to fabricate highly reliable amorphous InGaZnO (a-IGZO) thin-film transistors (TFT) on organic substrates for flexible device applications. We investigated 3 types of poly-siloxane (Poly-SX) passivation layers fabricated by a solution process and cured at low temperatures (180 °C) for a-IGZO TFTs. This passivation layer greatly improves the stability of the a-IGZO device even after being subjected to positive (PBS) and negative bias stress (NBS). The field effect mobility (μ) of MePhQ504010 passivated on the TFT reached 8.34 cm2/Vs and had a small threshold voltage shift of 0.9 V after PBS, -0.8 V after NBS without the hump phenomenon. Furthermore, we analyzed the hydrogen and hydroxide states in the a-IGZO layer by secondary ion mass spectrometry and X-ray photoelectron spectroscopy to determine the cause of excellent electrical properties despite the curing performed at a low temperature. These results show the potential of the solution processed Poly-SX passivation layer for flexible devices.

SMA foil-based elastocaloric cooling: from material behavior to device engineering

NASA Astrophysics Data System (ADS)

Bruederlin, F.; Ossmer, H.; Wendler, F.; Miyazaki, S.; Kohl, M.

2017-10-01

The elastocaloric effect associated with the stress-induced first order phase transformation in pseudoelastic shape memory alloy (SMA) films and foils is of special interest for cooling applications on a miniature scale enabling fast heat transfer and high cycling frequencies as well as tunable transformation temperatures. The focus is on TiNi-based materials having the potential to meet the various challenges associated with elastocaloric cooling including large adiabatic temperature change and ultra-low fatigue. The evolution of strain and temperature bands during tensile load cycling is investigated with respect to strain and strain-rate by in situ digital image correlation and infrared thermography with a spatial resolution in the order of 25 µm. Major design issues and challenges in fabrication of SMA film-based elastocaloric cooling devices are discussed including the efficiency of heat transfer as well as force recovery to enhance the coefficient of performance (COP) on the system level. Advanced demonstrators show a temperature span of 13 °C after 30 s, while the COP of the overall device reaches almost 10% of Carnot efficiency.

The conversion of PN-junction influencing the piezoelectric output of a CuO/ZnO nanoarray nanogenerator and its application as a room-temperature self-powered active H₂S sensor.

PubMed

Nie, Yuxin; Deng, Ping; Zhao, Yayu; Wang, Penglei; Xing, Lili; Zhang, Yan; Xue, Xinyu

2014-07-04

Room-temperature, high H2S sensing has been realized from a CuO/ZnO nanoarray self-powered, active gas sensor. The piezoelectric output of CuO/ZnO nanoarrays can act not only as the power source of the device, but also as the H2S sensing signal at room temperature. Upon exposure to 800 ppm H2S at room temperature, the piezoelectric output of the device greatly decreased from 0.738 V (in air) to 0.101 V. The sensitivity increased to 629.8, much higher than bare ZnO nanoarrays. As the device was exposed to H2S, a CuO/ZnO PN-junction was converted into a CuS/ZnO Ohmic contact, which greatly increased the electron density in the nanowire and enhanced the screen effect on the piezoelectric output. Our results can stimulate a research trend on designing new composite piezoelectric material for high-performance self-powered active gas sensors.

Elevated temperature crack growth

NASA Technical Reports Server (NTRS)

Yau, J. F.; Malik, S. N.; Kim, K. S.; Vanstone, R. H.; Laflen, J. H.

1985-01-01

The objective of the Elevated Temperature Crack Growth Project is to evaluate proposed nonlinear fracture mechanics methods for application to combustor liners of aircraft gas turbine engines. During the first year of this program, proposed path-independent (P-I) integrals were reviewed for such applications. Several P-I integrals were implemented into a finite-element postprocessor which was developed and verified as part of the work. Alloy 718 was selected as the analog material for use in the forthcoming experimental work. A buttonhead, single-edge notch specimen was designed and verified for use in elevated-temperature strain control testing with significant inelastic strains. A crack mouth opening displacement measurement device was developed for further use.

MEMS Applications in Aerodynamic Measurement Technology

NASA Technical Reports Server (NTRS)

Reshotko, E.; Mehregany, M.; Bang, C.

1998-01-01

Microelectromechanical systems (MEMS) embodies the integration of sensors, actuators, and electronics on a single substrate using integrated circuit fabrication techniques and compatible bulk and surface micromachining processes. Silicon and its derivatives form the material base for the MEMS technology. MEMS devices, including microsensors and microactuators, are attractive because they can be made small (characteristic dimension about 100 microns), be produced in large numbers with uniform performance, include electronics for high performance and sophisticated functionality, and be inexpensive. For aerodynamic measurements, it is preferred that sensors be small so as to approximate measurement at a point, and in fact, MEMS pressure sensors, wall shear-stress sensors, heat flux sensors and micromachined hot wires are nearing application. For the envisioned application to wind tunnel models, MEMS sensors can be placed on the surface or in very shallow grooves. MEMS devices have often been fabricated on stiff, flat silicon substrates, about 0.5 mm thick, and therefore were not easily mounted on curved surfaces. However, flexible substrates are now available and heat-flux sensor arrays have been wrapped around a curved turbine blade. Electrical leads can also be built into the flexible substrate. Thus MEMS instrumented wind tunnel models do not require deep spanwise grooves for tubes and leads that compromise the strength of conventionally instrumented models. With MEMS, even the electrical leads can potentially be eliminated if telemetry of the signals to an appropriate receiver can be implemented. While semiconductor silicon is well known for its electronic properties, it is also an excellent mechanical material for MEMS applications. However, silicon electronics are limited to operations below about 200 C, and silicon's mechanical properties start to diminish above 400 C. In recent years, silicon carbide (SiC) has emerged as the leading material candidate for applications in high temperature environments and can be used for high-temperature MEMS applications. With SiC, diodes and more complex electronics have been shown to operate to about 600 C, while the mechanical properties of SiC are maintained to much higher temperatures. Even when MEMS devices show benefits in the laboratory, there are many packaging challenges for any aeronautics application. Incorporating MEMS into these applications requires new approaches to packaging that goes beyond traditional integrated circuit (IC) packaging technologies. MEMS must interact mechanically, as well as electrically with their environment, making most traditional chip packaging and mounting techniques inadequate. Wind tunnels operate over wide temperature ranges in an environment that is far from being a 'clean-room.' In flight, aircraft are exposed to natural elements (e.g. rain, sun, ice, insects and dirt) and operational interferences(e.g. cleaning and deicing fluids, and maintenance crews). In propulsion systems applications, MEMS devices will have to operate in environments containing gases with very high temperatures, abrasive particles and combustion products. Hence deployment and packaging that maintains the integrity of the MEMS system is crucial. This paper presents an overview of MEMS fabrication and materials, descriptions of available sensors with more details on those being developed in our laboratories, and a discussion of sensor deployment options for wind tunnel and flight applications.

Bimorph material/structure designs for high sensitivity flexible surface acoustic wave temperature sensors.

PubMed

Tao, R; Hasan, S A; Wang, H Z; Zhou, J; Luo, J T; McHale, G; Gibson, D; Canyelles-Pericas, P; Cooke, M D; Wood, D; Liu, Y; Wu, Q; Ng, W P; Franke, T; Fu, Y Q

2018-06-13

A fundamental challenge for surface acoustic wave (SAW) temperature sensors is the detection of small temperature changes on non-planar, often curved, surfaces. In this work, we present a new design methodology for SAW devices based on flexible substrate and bimorph material/structures, which can maximize the temperature coefficient of frequency (TCF). We performed finite element analysis simulations and obtained theoretical TCF values for SAW sensors made of ZnO thin films (~5 μm thick) coated aluminum (Al) foil and Al plate substrates with thicknesses varied from 1 to 1600 μm. Based on the simulation results, SAW devices with selected Al foil or plate thicknesses were fabricated. The experimentally measured TCF values were in excellent agreements with the simulation results. A normalized wavelength parameter (e.g., the ratio between wavelength and sample thickness, λ/h) was applied to successfully describe changes in the TCF values, and the TCF readings of the ZnO/Al SAW devices showed dramatic increases when the normalized wavelength λ/h was larger than 1. Using this design approach, we obtained the highest reported TCF value of -760 ppm/K for a SAW device made of ZnO thin film coated on Al foils (50 μm thick), thereby enabling low cost temperature sensor applications to be realized on flexible substrates.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, A.M.

1995-03-21

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

Single-photon emitting diode in silicon carbide.

PubMed

Lohrmann, A; Iwamoto, N; Bodrog, Z; Castelletto, S; Ohshima, T; Karle, T J; Gali, A; Prawer, S; McCallum, J C; Johnson, B C

2015-07-23

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

Surface Micromachined Silicon Carbide Accelerometers for Gas Turbine Applications

NASA Technical Reports Server (NTRS)

DeAnna, Russell G.

1998-01-01

A finite-element analysis of possible silicon carbide (SIC) folded-beam, lateral-resonating accelerometers is presented. Results include stiffness coefficients, acceleration sensitivities, resonant frequency versus temperature, and proof-mass displacements due to centripetal acceleration of a blade-mounted sensor. The surface micromachined devices, which are similar to the Analog Devices Inc., (Norwood, MA) air-bag crash detector, are etched from 2-pm thick, 3C-SiC films grown at 1600 K using atmospheric pressure chemical vapor deposition (APCVD). The substrate is a 500 gm-thick, (100) silicon wafer. Polysilicon or silicon dioxide is used as a sacrificial layer. The finite element analysis includes temperature-dependent properties, shape change due to volume expansion, and thermal stress caused by differential thermal expansion of the materials. The finite-element results are compared to experimental results for a SiC device of similar, but not identical, geometry. Along with changes in mechanical design, blade-mounted sensors would require on-chip circuitry to cancel displacements due to centripetal acceleration and improve sensitivity and bandwidth. These findings may result in better accelerometer designs for this application.

A method for safety testing of radiofrequency/microwave-emitting devices using MRI.

PubMed

Alon, Leeor; Cho, Gene Y; Yang, Xing; Sodickson, Daniel K; Deniz, Cem M

2015-11-01

Strict regulations are imposed on the amount of radiofrequency (RF) energy that devices can emit to prevent excessive deposition of RF energy into the body. In this study, we investigated the application of MR temperature mapping and 10-g average specific absorption rate (SAR) computation for safety evaluation of RF-emitting devices. Quantification of the RF power deposition was shown for an MRI-compatible dipole antenna and a non-MRI-compatible mobile phone via phantom temperature change measurements. Validation of the MR temperature mapping method was demonstrated by comparison with physical temperature measurements and electromagnetic field simulations. MR temperature measurements alongside physical property measurements were used to reconstruct 10-g average SAR. The maximum temperature change for a dipole antenna and the maximum 10-g average SAR were 1.83°C and 12.4 W/kg, respectively, for simulations and 1.73°C and 11.9 W/kg, respectively, for experiments. The difference between MR and probe thermometry was <0.15°C. The maximum temperature change and the maximum 10-g average SAR for a cell phone radiating at maximum output for 15 min was 1.7°C and 0.54 W/kg, respectively. Information acquired using MR temperature mapping and thermal property measurements can assess RF/microwave safety with high resolution and fidelity. © 2014 Wiley Periodicals, Inc.

A Method for Safety Testing of Radiofrequency/Microwave-Emitting Devices Using MRI

PubMed Central

Alon, Leeor; Cho, Gene Y.; Yang, Xing; Sodickson, Daniel K.; Deniz, Cem M.

2015-01-01

Purpose Strict regulations are imposed on the amount of radiofrequency (RF) energy that devices can emit to prevent excessive deposition of RF energy into the body. In this study, we investigated the application of MR temperature mapping and 10-g average specific absorption rate (SAR) computation for safety evaluation of RF-emitting devices. Methods Quantification of the RF power deposition was shown for an MRI-compatible dipole antenna and a non–MRI-compatible mobile phone via phantom temperature change measurements. Validation of the MR temperature mapping method was demonstrated by comparison with physical temperature measurements and electromagnetic field simulations. MR temperature measurements alongside physical property measurements were used to reconstruct 10-g average SAR. Results The maximum temperature change for a dipole antenna and the maximum 10-g average SAR were 1.83° C and 12.4 W/kg, respectively, for simulations and 1.73° C and 11.9 W/kg, respectively, for experiments. The difference between MR and probe thermometry was <0.15° C. The maximum temperature change and the maximum 10-g average SAR for a cell phone radiating at maximum output for 15 min was 1.7° C and 0.54 W/kg, respectively. Conclusion Information acquired using MR temperature mapping and thermal property measurements can assess RF/microwave safety with high resolution and fidelity. PMID:25424724

Thin Film Differential Photosensor for Reduction of Temperature Effects in Lab-on-Chip Applications.

PubMed

de Cesare, Giampiero; Carpentiero, Matteo; Nascetti, Augusto; Caputo, Domenico

2016-02-20

This paper presents a thin film structure suitable for low-level radiation measurements in lab-on-chip systems that are subject to thermal treatments of the analyte and/or to large temperature variations. The device is the series connection of two amorphous silicon/amorphous silicon carbide heterojunctions designed to perform differential current measurements. The two diodes experience the same temperature, while only one is exposed to the incident radiation. Under these conditions, temperature and light are the common and differential mode signals, respectively. A proper electrical connection reads the differential current of the two diodes (ideally the photocurrent) as the output signal. The experimental characterization shows the benefits of the differential structure in minimizing the temperature effects with respect to a single diode operation. In particular, when the temperature varies from 23 to 50 °C, the proposed device shows a common mode rejection ratio up to 24 dB and reduces of a factor of three the error in detecting very low-intensity light signals.

Thin Film Differential Photosensor for Reduction of Temperature Effects in Lab-on-Chip Applications

PubMed Central

de Cesare, Giampiero; Carpentiero, Matteo; Nascetti, Augusto; Caputo, Domenico

2016-01-01

This paper presents a thin film structure suitable for low-level radiation measurements in lab-on-chip systems that are subject to thermal treatments of the analyte and/or to large temperature variations. The device is the series connection of two amorphous silicon/amorphous silicon carbide heterojunctions designed to perform differential current measurements. The two diodes experience the same temperature, while only one is exposed to the incident radiation. Under these conditions, temperature and light are the common and differential mode signals, respectively. A proper electrical connection reads the differential current of the two diodes (ideally the photocurrent) as the output signal. The experimental characterization shows the benefits of the differential structure in minimizing the temperature effects with respect to a single diode operation. In particular, when the temperature varies from 23 to 50 °C, the proposed device shows a common mode rejection ratio up to 24 dB and reduces of a factor of three the error in detecting very low-intensity light signals. PMID:26907292

Development of Silicon Micromirrors for the Next Generation Space Telescope

NASA Astrophysics Data System (ADS)

Garcia, E. J.; Polosky, M. A.; Sleefe, G. E.; Habbit, R.; Zamora, J. C.; Greenhouse, M. A.

2001-12-01

This paper describes how advanced surface micromachining (SMM) technology is being used to develop prototype cryogenic micromirror arrays for evaluation as an instrument optical component for the NGST. When used as a spectrograph reflective slit mask, these arrays can yield a factor of 1000 reduction in mass and power over, traditional motor-driven slit wheels used on HST instruments. The advantage of micromirrors as a new approach to instrument aperture control is particularly apparent when it is coupled with new large format focal plane arrays to enable multi-object spectroscopy. In this application, the micromirror-enabled capability goes beyond mass and power reduction to offer increased observing efficiency (targets/hour). In the case of NGST, a factor of 100 improvement in efficiency relative to traditional instrument designs has been estimated. Surface micromachining uses fabrication processes adapted from integrated circuit manufacturing to build microscopic-sized electromechanical devices from polycrystalline silicon. Because these devices can be batch fabricated thousands or even millions of devices can be constructed on a single wafer at costs several orders of magnitude less than conventionally fabricated devices. This paper will describe the design and operation of prototype mirror devices that are currently under development. We have recently demonstrated the feasibility of operating micromirrors at cryogenic temperatures. A packaged unit with its associated interconnects has been successfully operated at temperatures less than 30 K. The ability to function at the cryogenic temperatures encountered in certain space applications is a major milestone for microsystems. This work is funded by NASA Goddard Space Flight Center. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Dept. of Energy under Contract DE-AC04-94AL85000.

A process to fabricate fused silica nanofluidic devices with embedded electrodes using an optimized room temperature bonding technique

NASA Astrophysics Data System (ADS)

Boden, Seth; Karam, P.; Schmidt, A.; Pennathur, S.

2017-05-01

Fused silica is an ideal material for nanofluidic systems due to its extreme purity, chemical inertness, optical transparency, and native hydrophilicity. However, devices requiring embedded electrodes (e.g., for bioanalytical applications) are difficult to realize given the typical high temperature fusion bonding requirements (˜1000 °C). In this work, we optimize a two-step plasma activation process which involves an oxygen plasma treatment followed by a nitrogen plasma treatment to increase the fusion bonding strength of fused silica at room temperature. We conduct a parametric study of this treatment to investigate its effect on bonding strength, surface roughness, and microstructure morphology. We find that by including a nitrogen plasma treatment to the standard oxygen plasma activation process, the room temperature bonding strength increases by 70% (0.342 J/m2 to 0.578 J/m2). Employing this optimized process, we fabricate and characterize a nanofluidic device with an integrated and dielectrically separated electrode. Our results prove that the channels do not leak with over 1 MPa of applied pressure after a 24 h storage time, and the electrode exhibits capacitive behavior with a finite parallel resistance in the upper MΩ range for up to a 6.3Vdc bias. These data thus allow us to overcome the barrier that has barred nanofluidic progress for the last decade, namely, the development of nanometer scale well-defined channels with embedded metallic materials for far-reaching applications such as the exquisite manipulation of biomolecules.

Supercapacitor Operating At 200 Degrees Celsius

PubMed Central

Borges, Raquel S.; Reddy, Arava Leela Mohana; Rodrigues, Marco-Tulio F.; Gullapalli, Hemtej; Balakrishnan, Kaushik; Silva, Glaura G.; Ajayan, Pulickel M.

2013-01-01

The operating temperatures of current electrochemical energy storage devices are limited due to electrolyte degradation and separator instability at higher temperatures. Here we demonstrate that a tailored mixture of materials can facilitate operation of supercapacitors at record temperatures, as high as 200°C. Composite electrolyte/separator structures made from naturally occurring clay and room temperature ionic liquids, with graphitic carbon electrodes, show stable supercapacitor performance at 200°C with good cyclic stability. Free standing films of such high temperature composite electrolyte systems can become versatile functional membranes in several high temperature energy conversion and storage applications. PMID:23999206

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

PubMed

Haque, M Samiul; Ali, S Zeeshan; Guha, P K; Oei, S P; Park, J; Maeng, S; Teo, K B K; Udrea, F; Milne, W I

2008-11-01

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

AMOLED (active matrix OLED) functionality and usable lifetime at temperature

NASA Astrophysics Data System (ADS)

Fellowes, David A.; Wood, Michael V.; Prache, Olivier; Jones, Susan

2005-05-01

Active Matrix Organic Light Emitting Diode (AMOLED) displays are known to exhibit high levels of performance, and these levels of performance have continually been improved over time with new materials and electronics design. eMagin Corporation developed a manually adjustable temperature compensation circuit with brightness control to allow for excellent performance over a wide temperature range. Night Vision and Electronic Sensors Directorate (US Army) tested the performance and survivability of a number of AMOLED displays in a temperature chamber over a range from -55°C to +85°C. Although device performance of AMOLEDs has always been its strong suit, the issue of usable display lifetimes for military applications continues to be an area of discussion and research. eMagin has made improvements in OLED materials and worked towards the development of a better understanding of usable lifetime for operation in a military system. NVESD ran luminance degradation tests of AMOLED panels at 50°C and at ambient to characterize the lifetime of AMOLED devices. The result is a better understanding of the applicability of AMOLEDs in military systems: where good fits are made, and where further development is needed.

Temperature-Dependent Charge Transport through Individually Contacted DNA Origami-Based Au Nanowires.

PubMed

Teschome, Bezu; Facsko, Stefan; Schönherr, Tommy; Kerbusch, Jochen; Keller, Adrian; Erbe, Artur

2016-10-11

DNA origami nanostructures have been used extensively as scaffolds for numerous applications such as for organizing both organic and inorganic nanomaterials, studying single molecule reactions, and fabricating photonic devices. Yet, little has been done toward the integration of DNA origami nanostructures into nanoelectronic devices. Among other challenges, the technical difficulties in producing well-defined electrical contacts between macroscopic electrodes and individual DNA origami-based nanodevices represent a serious bottleneck that hinders the thorough characterization of such devices. Therefore, in this work, we have developed a method to electrically contact individual DNA origami-based metallic nanowires using electron beam lithography. We then characterize the charge transport of such nanowires in the temperature range from room temperature down to 4.2 K. The room temperature charge transport measurements exhibit ohmic behavior, whereas at lower temperatures, multiple charge transport mechanisms such as tunneling and thermally assisted transport start to dominate. Our results confirm that charge transport along metallized DNA origami nanostructures may deviate from pure metallic behavior due to several factors including partial metallization, seed inhomogeneities, impurities, and weak electronic coupling among AuNPs. Besides, this study further elucidates the importance of variable temperature measurements for determining the dominant charge transport mechanisms for conductive nanostructures made by self-assembly approaches.

Temperature Oscillations in Loop Heat Pipe Operation

NASA Technical Reports Server (NTRS)

Ku, Jentung; Ottenstein, Laura; Kobel, Mark; Rogers, Paul; Kaya, Tarik; Paquin, Krista C. (Technical Monitor)

2000-01-01

Loop heat pipes (LHPs) are versatile two-phase heat transfer devices that have gained increasing acceptance for space and terrestrial applications. The operating temperature of an LHP is a function of its operating conditions. The LHP usually reaches a steady operating temperature for a given heat load and sink temperature. The operating temperature will change when the heat load and/or the sink temperature changes, but eventually reaches another steady state in most cases. Under certain conditions, however, the loop operating temperature never really reaches a true steady state, but instead becomes oscillatory. This paper discusses the temperature oscillation phenomenon using test data from a miniature LHP.

Integration and application of optical chemical sensors in microbioreactors.

PubMed

Gruber, Pia; Marques, Marco P C; Szita, Nicolas; Mayr, Torsten

2017-08-08

The quantification of key variables such as oxygen, pH, carbon dioxide, glucose, and temperature provides essential information for biological and biotechnological applications and their development. Microfluidic devices offer an opportunity to accelerate research and development in these areas due to their small scale, and the fine control over the microenvironment, provided that these key variables can be measured. Optical sensors are well-suited for this task. They offer non-invasive and non-destructive monitoring of the mentioned variables, and the establishment of time-course profiles without the need for sampling from the microfluidic devices. They can also be implemented in larger systems, facilitating cross-scale comparison of analytical data. This tutorial review presents an overview of the optical sensors and their technology, with a view to support current and potential new users in microfluidics and biotechnology in the implementation of such sensors. It introduces the benefits and challenges of sensor integration, including, their application for microbioreactors. Sensor formats, integration methods, device bonding options, and monitoring options are explained. Luminescent sensors for oxygen, pH, carbon dioxide, glucose and temperature are showcased. Areas where further development is needed are highlighted with the intent to guide future development efforts towards analytes for which reliable, stable, or easily integrated detection methods are not yet available.

Micro-channel-based high specific power lithium target

NASA Astrophysics Data System (ADS)

Mastinu, P.; Martın-Hernández, G.; Praena, J.; Gramegna, F.; Prete, G.; Agostini, P.; Aiello, A.; Phoenix, B.

2016-11-01

A micro-channel-based heat sink has been produced and tested. The device has been developed to be used as a Lithium target for the LENOS (Legnaro Neutron Source) facility and for the production of radioisotope. Nevertheless, applications of such device can span on many areas: cooling of electronic devices, diode laser array, automotive applications etc. The target has been tested using a proton beam of 2.8MeV energy and delivering total power shots from 100W to 1500W with beam spots varying from 5mm2 to 19mm2. Since the target has been designed to be used with a thin deposit of lithium and since lithium is a low-melting-point material, we have measured that, for such application, a specific power of about 3kW/cm2 can be delivered to the target, keeping the maximum surface temperature not exceeding 150° C.

Polymer Stabilization of Liquid-Crystal Blue Phase II toward Photonic Crystals.

PubMed

Jo, Seong-Yong; Jeon, Sung-Wook; Kim, Byeong-Cheon; Bae, Jae-Hyun; Araoka, Fumito; Choi, Suk-Won

2017-03-15

The temperature ranges where a pure simple-cubic blue phase (BPII) emerges are quite narrow compared to the body-centered-cubic BP (BPI) such that the polymer stabilization of BPII is much more difficult. Hence, a polymer-stabilized BPII possessing a wide temperature range has been scarcely reported. Here, we fabricate a polymer-stabilized BPII over a temperature range of 50 °C including room temperature. The fabricated polymer-stabilized BPII is confirmed via polarized optical microscopy, Bragg reflection, and Kossel diagram observations. Furthermore, we demonstrate reflective BP liquid-crystal devices utilizing the reflectance-voltage performance as a potential application of the polymer-stabilized BPII. Our work demonstrates the possibility of practical application of the polymer-stabilized BPII to photonic crystals.

Colorless polyimide/organoclay nanocomposite substrates for flexible organic light-emitting devices.

PubMed

Kim, Jin-Hoe; Choi, Myeon-Chon; Kim, Hwajeong; Kim, Youngkyoo; Chang, Jin-Hae; Han, Mijeong; Kim, Il; Ha, Chang-Sik

2010-01-01

We report the preparation and application of indium tin oxide (ITO) coated fluorine-containing polyimide/organoclay nanocomposite substrate. Fluorine-containing polyimide/organoclay nanocomposite films were prepared through thermal imidization of poly(amic acid)/organoclay mixture films, whilst on which ITO thin films were coated on the films using a radio-frequency planar magnetron sputtering by varying the substrate temperature and the ITO thickness. Finally the ITO coated fluorine-containing polyimide/organoclay nanocomposite substrate was employed to make flexible organic light-emitting devices (OLED). Results showed that the lower sheet resistance was achieved when the substrate temperature was high and the ITO film was thick even though the optical transmittance was slightly lowered as the thickness increased. approximately 10 nm width ITO nanorods were found for all samples but the size of clusters with the nanorods was generally increased with the substrate temperature and the thickness. The flexible OLED made using the present substrate was quite stable even when the device was extremely bended.

Measurement of curvature and temperature using multimode interference devices

NASA Astrophysics Data System (ADS)

Guzman-Sepulveda, J. R.; Aguilar-Soto, J. G.; Torres-Cisneros, M.; Ibarra-Manzano, O. G.; May-Arrioja, D. A.

2011-09-01

In this paper we propose the fabrication, implementation, and testing of a novel fiber optic sensor based on Multimode Interference (MMI) effects for independent measurement of curvature and temperature. The development of fiber based MMI devices is relatively new and since they exhibit a band-pass filter response they can be used in different applications. The operating mechanism of our sensor is based on the self-imaging phenomena that occur in multimode fibers (MMF), which is related to the interference of the propagating modes and their accumulated phase. We demonstrate that the peak wavelength shifts with temperature variations as a result of changes in the accumulated phase through thermo-optics effects, while the intensity of the peak wavelength is reduced as the curvature increases since we start to loss higher order modes. In this way both measurements are obtained independently with a single fiber device. Compared to other fiber-optic sensors, our sensor features an extremely simple structure and fabrication process, and hence cost effectiveness.

Note: A microfluidic freezer based on evaporative cooling of atomized aqueous microdroplets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Jin; Kim, Dohyun, E-mail: dohyun.kim@mju.ac.kr; Chung, Minsub

2015-01-15

We report for the first time water-based evaporative cooling integrated into a microfluidic chip for temperature control and freezing of biological solution. We opt for water as a nontoxic, effective refrigerant. Aqueous solutions are atomized in our device and evaporation of microdroplets under vacuum removes heat effectively. We achieve rapid cooling (−5.1 °C/s) and a low freezing temperature (−14.1 °C). Using this approach, we demonstrate freezing of deionized water and protein solution. Our simple, yet effective cooling device may improve many microfluidic applications currently relying on external power-hungry instruments for cooling and freezing.

Development of high frequency low weight power magnetics for aerospace power systems

NASA Technical Reports Server (NTRS)

Schwarze, G. E.

1984-01-01

A dominant design consideration in the development of space type power mangetic devices is the application of reliable thermal control methods to prevent device failure which is due to excessive temperature rises and hot temperatures in critical areas. The resultant design must also yield low weight, high efficiency, high reliability and maintainability, and long life. The weight savings and high efficiency that results by going to high frequency and unique thermal control techniques is demonstrated by the development of a 25 kVA, 20 kHz space type transformer under the power magnetics technology program. Work in the area of power rotary transformer is also discussed.

Capillary Two-Phase Thermal Devices for Space Applications

NASA Technical Reports Server (NTRS)

Ku, Jentung

2016-01-01

This is the presentation file for an invited seminar for Department of Mechanical and Aerospace Engineering at the Case Western Reserve University. The seminar is scheduled for April 1, 2016.Description: This presentation will discuss operating principles and performance characteristics of heat pipes (HPs) and loop heat pipes (LHPs) and their application for spacecraft thermal control. Topics include: 1) HP operating principles; 2) HP performance characteristics; 3) LHP pressure profiles; 4) LHP operating temperature; 5) LHP operating temperature control; and 6) Examples of using HPs and LHPs on NASA flight projects.

Direct Digital Control Study.

DTIC Science & Technology

1985-02-01

Deck - Cold Deck Reset Reheat Coil Reset Steam Boiler Optimization [lot Water Outside Air Reset Chiller Optimization Chiller Water Temperature Reset...with programming techniques for each type of installed DDC in order to effect changes in operating setpoints and application programs. *Communication...can be changed without recailbration of instrumentation devices. Changes to the application software, operating setpoints and parameters require the

Electric-field-induced extremely large change in resistance in graphene ferromagnets

NASA Astrophysics Data System (ADS)

Song, Yu

2018-01-01

A colossal magnetoresistance (˜100×10^3% ) and an extremely large magnetoresistance (˜1×10^6% ) have been previously explored in manganite perovskites and Dirac materials, respectively. However, the requirement of an extremely strong magnetic field (and an extremely low temperature) makes them not applicable for realistic devices. In this work, we propose a device that can generate even larger changes in resistance in a zero-magnetic field and at a high temperature. The device is composed of graphene under two strips of yttrium iron garnet (YIG), where two gate voltages are applied to cancel the heavy charge doping in the YIG-induced half-metallic ferromagnets. By calculations using the Landauer-Büttiker formalism, we demonstrate that, when a proper gate voltage is applied on the free ferromagnet, changes in resistance up to 305×10^6% (16×10^3% ) can be achieved at the liquid helium (nitrogen) temperature and in a zero magnetic field. We attribute such a remarkable effect to a gate-induced full-polarization reversal in the free ferromagnet, which results in a metal-state to insulator-state transition in the device. We also find that the proposed effect can be realized in devices using other magnetic insulators, such as EuO and EuS. Our work should be helpful for developing a realistic switching device that is energy saving and CMOS-technology compatible.

Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices

NASA Astrophysics Data System (ADS)

Coltrin, Michael E.; Kaplar, Robert J.

2017-02-01

Mobility and critical electric field for bulk AlxGa1-xN alloys across the full composition range (0 ≤ x ≤ 1) are analyzed to address the potential application of this material system for power electronics. Calculation of the temperature-dependent electron mobility includes the potential limitations due to different scattering mechanisms, including alloy, optical polar phonon, deformation potential, and piezoelectric scattering. The commonly used unipolar figure of merit (appropriate for vertical-device architectures), which increases strongly with increasing mobility and critical electric field, is examined across the alloy composition range to estimate the potential performance in power electronics applications. Alloy scattering is the dominant limitation to mobility and thus also for the unipolar figure of merit. However, at higher alloy compositions, the limitations due to alloy scattering are overcome by increased critical electric field. These trade-offs, and their temperature dependence, are quantified in the analysis.

Uncooled Split-off Quantum Infrared Sensors for 3-5 Micron Imaging Applications

DTIC Science & Technology

2012-12-20

nonuniformity and needs to be optimized. Figure 5 (a) shows plots of Figure 3: (a) The responsivity and (b) detectivity variation with emitter...devices with larger mesa sizes than that with smaller sizes. The current nonuniformity originally results from the electric potential gradient in the...respectively. x = 0 represents the device center. The nonuniformity becomes remarkable when the temperature is increased. 5 2.3 Design of resonant

Wide Bandgap Semiconductor Nanowires for Electronic, Photonic and Sensing Devices

DTIC Science & Technology

2012-01-05

oxide -based thin film transistors ( TFTs ) have attracted much attention for applications like flexible electronic devices. The...crystals, and ~ 1.5 cm2.V-1.s-1 for pentacene thin films ). A number of groups have demonstrated TFTs based on α- oxide semiconductors such as zinc oxide ...show excellent long-term stability at room temperature. Results: High-performance amorphous (α-) InGaZnO-based thin film transistors ( TFTs )

Nanocrystals for electronics.

PubMed

Panthani, Matthew G; Korgel, Brian A

2012-01-01

Semiconductor nanocrystals are promising materials for low-cost large-area electronic device fabrication. They can be synthesized with a wide variety of chemical compositions and size-tunable optical and electronic properties as well as dispersed in solvents for room-temperature deposition using various types of printing processes. This review addresses research progress in large-area electronic device applications using nanocrystal-based electrically active thin films, including thin-film transistors, light-emitting diodes, photovoltaics, and thermoelectrics.

Electrothermal feedback in kinetic inductance detectors

NASA Astrophysics Data System (ADS)

Guruswamy, T.; Thomas, C. N.; Withington, S.; Goldie, D. J.

2017-06-01

In kinetic inductance detectors (KIDs) and other similar applications of superconducting microresonators, both the large and small-signal behaviour of the device may be affected by electrothermal feedback. Microwave power applied to read out the device is absorbed by and heats the superconductor quasiparticles, changing the superconductor conductivity and hence the readout power absorbed in a positive or negative feedback loop. In this work, we explore numerically the implications of an extensible theoretical model of a generic superconducting microresonator device for a typical KID, incorporating recent work on the power flow between superconductor quasiparticles and phonons. This model calculates the large-signal (changes in operating point) and small-signal behaviour of a device, allowing us to determine the effect of electrothermal feedback on device responsivity and noise characteristics under various operating conditions. We also investigate how thermally isolating the device from the bath, for example by designing the device on a membrane only connected to the bulk substrate by thin legs, affects device performance. We find that at a typical device operating point, positive electrothermal feedback reduces the effective thermal conductance from the superconductor quasiparticles to the bath, and so increases responsivity to signal (pair-breaking) power, increases noise from temperature fluctuations, and decreases the noise equivalent power (NEP). Similarly, increasing the thermal isolation of the device while keeping the quasiparticle temperature constant decreases the NEP, but also decreases the device response bandwidth.

Micro/Nano Fabricated Solid-State Thermoelectric Generator Devices for Integrated High Voltage Power Sources

NASA Astrophysics Data System (ADS)

Fleurial, J.-P.; Ryan, M. A.; Snyder, G. J.; Huang, C.-K.; Whitacre, J. F.; Patel, J.; Lim, J.; Borshchevsky, A.

2002-01-01

Deep space missions have a strong need for compact, high power density, reliable and long life electrical power generation and storage under extreme temperature conditions. Except for electrochemical batteries and solar cells, there are currently no available miniaturized power sources. Conventional power generators devices become inefficient in extreme environments (such as encountered in Mars, Venus or outer planet missions) and rechargeable energy storage devices can only be operated in a narrow temperature range thereby limiting mission duration. The planned development of much smaller spacecrafts incorporating a variety of micro/nanodevices and miniature vehicles will require novel, reliable power technologies. It is also expected that such micro power sources could have a wide range of terrestrial applications, in particular when the limited lifetime and environmental limitations of batteries are key factors. Advanced solid-state thermoelectric combined with radioisotope or waste heat sources and low profile energy storage devices are ideally suited for these applications. The Jet Propulsion Laboratory has been actively pursuing the development of thermoelectric micro/nanodevices that can be fabricated using a combination of electrochemical deposition and integrated circuit processing techniques. Some of the technical challenges associated with these micro/nanodevice concepts, their expected level of performance and experimental fabrication and testing results to date are presented and discussed.

Investigation of resistive switching behaviours in WO3-based RRAM devices

NASA Astrophysics Data System (ADS)

Li, Ying-Tao; Long, Shi-Bing; Lü, Hang-Bing; Liu, Qi; Wang, Qin; Wang, Yan; Zhang, Sen; Lian, Wen-Tai; Liu, Su; Liu, Ming

2011-01-01

In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.

Diagnostic devices for isothermal nucleic acid amplification.

PubMed

Chang, Chia-Chen; Chen, Chien-Cheng; Wei, Shih-Chung; Lu, Hui-Hsin; Liang, Yang-Hung; Lin, Chii-Wann

2012-01-01

Since the development of the polymerase chain reaction (PCR) technique, genomic information has been retrievable from lesser amounts of DNA than previously possible. PCR-based amplifications require high-precision instruments to perform temperature cycling reactions; further, they are cumbersome for routine clinical use. However, the use of isothermal approaches can eliminate many complications associated with thermocycling. The application of diagnostic devices for isothermal DNA amplification has recently been studied extensively. In this paper, we describe the basic concepts of several isothermal amplification approaches and review recent progress in diagnostic device development.

Diagnostic Devices for Isothermal Nucleic Acid Amplification

PubMed Central

Chang, Chia-Chen; Chen, Chien-Cheng; Wei, Shih-Chung; Lu, Hui-Hsin; Liang, Yang-Hung; Lin, Chii-Wann

2012-01-01

Since the development of the polymerase chain reaction (PCR) technique, genomic information has been retrievable from lesser amounts of DNA than previously possible. PCR-based amplifications require high-precision instruments to perform temperature cycling reactions; further, they are cumbersome for routine clinical use. However, the use of isothermal approaches can eliminate many complications associated with thermocycling. The application of diagnostic devices for isothermal DNA amplification has recently been studied extensively. In this paper, we describe the basic concepts of several isothermal amplification approaches and review recent progress in diagnostic device development. PMID:22969402

Application of Thermo-Mechanical Measurements of Plastic Packages for Reliability Evaluation of PEMS

NASA Technical Reports Server (NTRS)

Sharma, Ashok K.; Teverovsky, Alexander

2004-01-01

Thermo-mechanical analysis (TMA) is typically employed for measurements of the glass transition temperature (Tg) and coefficients of thermal expansion (CTE) in molding compounds used in plastic encapsulated microcircuits (PEMs). Application of TMA measurements directly to PEMs allows anomalies to be revealed in deformation of packages with temperature, and thus indicates possible reliability concerns related to thermo-mechanical integrity and stability of the devices. In this work, temperature dependencies of package deformation were measured in several types of PEMs that failed environmental stress testing including temperature cycling, highly accelerated stress testing (HAST) in humid environments, and bum-in (BI) testing. Comparison of thermo-mechanical characteristics of packages and molding compounds in the failed parts allowed for explanation of the observed failures. The results indicate that TMA of plastic packages might be used for quality evaluation of PEMs intended for high-reliability applications.

Time-Separating Heating and Sensor Functions of Thermistors in Precision Thermal Control Applications

NASA Technical Reports Server (NTRS)

Cho, Hyung J.; Sukhatme, Kalyani G.; Mahoney, John C.; Penanen, Konstantin Penanen; Vargas, Rudolph, Jr.

2010-01-01

A method allows combining the functions of a heater and a thermometer in a single device, a thermistor, with minimal temperature read errors. Because thermistors typically have a much smaller thermal mass than the objects they monitor, the thermal time to equilibrate the thermometer to the temperature of the object is typically much shorter than the thermal time of the object to change its temperature in response to an external perturbation.

Method of gettering hydrogen under conditions of low pressure

DOEpatents

Mendelsohn, M.H.; Gruen, D.M.

1983-08-09

A ternary intermetallic compound having the formula Zr(V[sub 1[minus]x]Cr[sub x])[sub 2] where x is in the range of 0.01 to 0.90 is capable of reversibly sorbing hydrogen at temperatures ranging from room temperature to 200 C, at pressures down to 10[sup [minus]6] Torr. The compound is suitable for use as a hydrogen getter in low pressure, high temperature applications such as magnetic confinement fusion devices. 3 figs.

Nanoelectronics: Opportunities for future space applications

NASA Technical Reports Server (NTRS)

Frazier, Gary

1995-01-01

Further improvements in the performance of integrated electronics will eventually halt due to practical fundamental limits on our ability to downsize transistors and interconnect wiring. Avoiding these limits requires a revolutionary approach to switching device technology and computing architecture. Nanoelectronics, the technology of exploiting physics on the nanometer scale for computation and communication, attempts to avoid conventional limits by developing new approaches to switching, circuitry, and system integration. This presentation overviews the basic principles that operate on the nanometer scale that can be assembled into practical devices and circuits. Quantum resonant tunneling (RT) is used as the center-piece of the overview since RT devices already operate at high temperature (120 degrees C) and can be scaled, in principle, to a few nanometers in semiconductors. Near- and long-term applications of GaAs and silicon quantum devices are suggested for signal and information processing, memory, optoelectronics, and radio frequency (RF) communication.

Colossal photo-conductive gain in low temperature processed TiO2 films and their application in quantum dot solar cells

NASA Astrophysics Data System (ADS)

Mandal, Debranjan; Goswami, Prasenjit N.; Rath, Arup K.

2017-03-01

Colloidal quantum dot (QD) solar cells have seen remarkable progress in recent past to reach the certified efficiency of 10.6%. Anatase titanium oxide (TiO2) is a widely studied n-type widow layer for the collection of photogenerated electrons in QD solar cells. Requirement of high temperature (˜500 °C) processing steps proved to be disadvantageous for its applications in flexible solar cells and roll to roll processing, and it also has adverse commercial implications. Here, we report that solar light exposure to low temperature processed (80 °C-150 °C) TiO2 and niobium doped TiO2 films leads to unprecedented enhancement in their electron densities and electron mobilities, which enables them to be used as efficient n-type layers in quantum dot solar cells. Such photoinduced high conducting states in these films show gradual decay over hours after the light bias is taken off and can be retrieved under solar illumination. On the contrary, TiO2 films processed at 500 °C show marginal photo induced enhancements in their characteristics. In bilayer configuration with PbS QDs, photovoltaic devices based on low temperature processed TiO2 films show improved performance over high temperature processed TiO2 films. The stability of photovoltaic devices also improved in low temperature processed TiO2 films under ambient working conditions.

Quantum cascade lasers, systems, and applications in Europe

NASA Astrophysics Data System (ADS)

Lambrecht, Armin

2005-03-01

Since the invention of the Quantum Cascade Laser (QCL) a decade ago an impressive progress has been achieved from first low temperature pulsed laser emission to continuous wave operation at room temperature. Distributed feedback (DFB) lasers working in pulsed mode at ambient temperatures and covering a broad spectral range in the mid infrared (MIR) are commercially available now. For many industrial applications e.g. automotive exhaust control and process monitoring, laser spectroscopy is an established technique, generally using near infrared (NIR) diode lasers. However, the mid infrared (MIR) spectral region is of special interest because of much stronger absorption lines compared to NIR. The status of QCL devices, system development and applications is reviewed. Special emphasis is given to the situation in Europe where a remarkable growth of QCL related R&D can be observed.

MEMS Device Being Developed for Active Cooling and Temperature Control

NASA Technical Reports Server (NTRS)

Moran, Matthew E.

2001-01-01

High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) is currently under development at the NASA Glenn Research Center to meet this need. It uses a thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface. The device can be used strictly in the cooling mode, or it can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly are accomplished by wet etching and wafer bonding techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces and limited failure modes, and minimal induced vibration.

Small area silicon diffused junction X-ray detectors

NASA Technical Reports Server (NTRS)

Walton, J. T.; Pehl, R. H.; Larsh, A. E.

1982-01-01

The low-temperature performance of silicon diffused junction detectors in the measurement of low energy X-rays is reported. The detectors have an area of 0.04 sq cm and a thickness of 100 microns. The spectral resolutions of these detectors were found to be in close agreement with expected values, indicating that the defects introduced by the high-temperature processing required in the device fabrication were not deleteriously affecting the detection of low-energy X-rays. Device performance over a temperature range of 77 K to 150 K is given. These detectors were designed to detect low-energy X-rays in the presence of minimum ionizing electrons. The successful application of silicon-diffused junction technology to X-ray detector fabrication may facilitate the development of other novel silicon X-ray detector designs.

Dual-lasing channel quantum cascade laser based on scattering-assisted injection design.

PubMed

Wen, Boyu; Xu, Chao; Wang, Siyi; Wang, Kaixi; Tam, Man Chun; Wasilewski, Zbig; Ban, Dayan

2018-04-02

A dual lasing channel Terahertz Quantum Cascade laser (THz QCL) based on GaAs/Al 0.17 Ga 0.83 As material system is demonstrated. The device shows the lowest reported threshold current density (550A/cm 2 at 50K) of GaAs/Al x Ga 1-x As material system based scattering-assisted (SA) structures and operates up to a maximum lasing temperature of 144K. Dual lasing channel operation is investigated theoretically and experimentally. The combination of low frequency emission, dual lasing channel operation, low lasing threshold current density and high temperature performance make such devices ideal candidates for low frequency applications, and initiates the design strategy for achieving high-temperature performance terahertz quantum cascade laser with wide frequency coverage at low frequency.

Hybrid Fabry-Perot interferometer for simultaneous liquid refractive index and temperature measurement.

PubMed

Xu, Ben; Yang, Yi; Jia, Zhenbao; Wang, D N

2017-06-26

A compact and high sensitivity sensor with a fiber-tip structure is proposed and demonstrated for simultaneously liquid refractive index (RI) and temperature sensing. The device is fabricated by inserting a tiny segment of capillary tube between single-mode fibers (SMFs) to form two cascaded Fabry-Perot interferometers (FPIs). The theoretical and experimental results demonstrate that the ambient liquid RI and temperature can be simultaneously determined by the intensity and shift of the resonant wavelength in the reflection spectrum. Our proposed device has the highest RI sensitivity of ~216.37 dB/RIU at the RI value of 1.30; a high spatial resolution owing to its compact size (with dimension <400 μm) makes it promising for high precision bio/chemical sensing applications.

Microfluidic Pumps Containing Teflon [Trademark] AF Diaphragms

NASA Technical Reports Server (NTRS)

Willis, Peter; White, Victor; Grunthaner, Frank; Ikeda, Mike; Mathies, Richard A.

2009-01-01

Microfluidic pumps and valves based on pneumatically actuated diaphragms made of Teflon AF polymers are being developed for incorporation into laboratory-on-a-chip devices that must perform well over temperature ranges wider than those of prior diaphragm-based microfluidic pumps and valves. Other potential applications include implanted biomedical microfluidic devices, wherein the biocompatability of Teflon AF polymers would be highly advantageous. These pumps and valves have been demonstrated to function stably after cycling through temperatures from -125 to 120 C. These pumps and valves are intended to be successors to similar prior pumps and valves containing diaphragms made of polydimethylsiloxane (PDMS) [commonly known as silicone rubber]. The PDMS-containing valves ae designed to function stably only within the temperature range from 5 to 80 C. Undesirably, PDMS membranes are somwehat porous and retain water. PDMS is especially unsuitable for use at temperatures below 0 C because the formation of ice crystals increases porosity and introduces microshear.

Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Hartmann, F.; Pfenning, A.; Rebello Sousa Dias, M.; Langer, F.; Höfling, S.; Kamp, M.; Worschech, L.; Castelano, L. K.; Marques, G. E.; Lopez-Richard, V.

2017-10-01

We study the electroluminescence (EL) emission of purely n-doped resonant tunneling diodes in a wide temperature range. The paper demonstrates that the EL originates from impact ionization and radiative recombination in the extended collector region of the tunneling device. Bistable current-voltage response and EL are detected and their respective high and low states are tuned under varying temperature. The bistability of the EL intensity can be switched from direct to inverted with respect to the tunneling current and the optical on/off ratio can be enhanced with increasing temperature. One order of magnitude amplification of the optical on/off ratio can be attained compared to the electrical one. Our observation can be explained by an interplay of moderate peak-to-valley current ratios, large resonance voltages, and electron energy loss mechanisms, and thus, could be applied as an alternative route towards optoelectronic applications of tunneling devices.

Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.

PubMed

Wang, Zhenwei; Al-Jawhari, Hala A; Nayak, Pradipta K; Caraveo-Frescas, J A; Wei, Nini; Hedhili, M N; Alshareef, H N

2015-04-20

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

PubMed Central

Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, M. N.; Alshareef, H. N.

2015-01-01

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field. PMID:25892711

MEMS testing and applications in automotive and aerospace industries

NASA Astrophysics Data System (ADS)

Ma, Zhichun; Chen, Xuyuan

2009-05-01

MEMS technology combines micromachining and integrated circuit fabrication technologies to produce highly reliable MEMS transducers. This paper presents an overview of MEMS transducers applications, particularly in automotive and aerospace industries, which includes inertia sensors for safety, navigation, and guidance control, thermal anemometer for temperature and heat-flux sensors in engine applications, MEMS atomizers for fuel injection, and micromachined actuators for flow control applications. Design examples for the devices in above mentioned applications are also presented and test results are given.

Conformal Microwave Array (CMA) Applicators for Hyperthermia of Diffuse Chestwall Recurrence

PubMed Central

Stauffer, Paul R.; Maccarini, Paolo; Arunachalam, Kavitha; Craciunescu, Oana; Diederich, Chris; Juang, Titania; Rossetto, Francesca; Schlorff, Jaime; Milligan, Andrew; Hsu, Joe; Sneed, Penny; Vujaskovic, Zeljko

2010-01-01

Purpose This article summarizes the evolution of microwave array applicators for heating large area chestwall disease as an adjuvant to external beam radiation, systemic chemotherapy, and potentially simultaneous brachytherapy. Methods Current devices used for thermotherapy of chestwall recurrence are reviewed. The largest conformal array applicator to date is evaluated in four studies: i) ability to conform to the torso is demonstrated with a CT scan of a torso phantom and MR scan of the conformal waterbolus component on a mastectomy patient; ii) Specific Absorption Rate (SAR) and temperature distributions are calculated with electromagnetic and thermal simulation software for a mastectomy patient; iii). SAR patterns are measured with a scanning SAR probe in liquid muscle phantom for a buried coplanar waveguide CMA; and iv) heating patterns and patient tolerance of CMA applicators are characterized in a clinical pilot study with 13 patients. Results CT and MR scans demonstrate excellent conformity of CMA applicators to contoured anatomy. Simulations demonstrate effective control of heating over contoured anatomy. Measurements confirm effective coverage of large treatment areas with no gaps. In 42 hyperthermia treatments, CMA applicators provided well-tolerated effective heating of up to 500cm2 regions, achieving target temperatures of Tmin=41.4±0.7°C, T90=42.1±0.6°C, Tave=42.8±0.6°C, and Tmax=44.3±0.8°C as measured in an average of 90 points per treatment. Summary The CMA applicator is an effective thermal therapy device for heating large-area superficial disease such as diffuse chestwall recurrence. It is able to cover over three times the treatment area of conventional hyperthermia devices while conforming to typical body contours. PMID:20849262

Highly Stretchable Multifunctional Wearable Devices Based on Conductive Cotton and Wool Fabrics.

PubMed

Souri, Hamid; Bhattacharyya, Debes

2018-06-05

The demand for stretchable, flexible, and wearable multifunctional devices based on conductive nanomaterials is rapidly increasing considering their interesting applications including human motion detection, robotics, and human-machine interface. There still exists a great challenge to manufacture stretchable, flexible, and wearable devices through a scalable and cost-effective fabrication method. Herein, we report a simple method for the mass production of electrically conductive textiles, made of cotton and wool, by hybridization of graphene nanoplatelets and carbon black particles. Conductive textiles incorporated into a highly elastic elastomer are utilized as highly stretchable and wearable strain sensors and heaters. The electromechanical characterizations of our multifunctional devices establish their excellent performance as wearable strain sensors to monitor various human motions, such as finger, wrist, and knee joint movements, and to recognize sound with high durability. Furthermore, the electrothermal behavior of our devices shows their potential application as stretchable and wearable heaters working at a maximum temperature of 103 °C powered with 20 V.

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

High performance quantum cascade lasers: Loss, beam stability, and gain engineering

NASA Astrophysics Data System (ADS)

Bouzi, Pierre Michel

Quantum Cascade (QC) lasers are semiconductor devices emitting in the mid-infrared (3-30 micron) and terahertz (30-300 micron) regions of the electromagnetic spectrum. Since their first demonstration by Jerome Faist et. al. in 1994, they have evolved very quickly into high performance devices and given rise to many applications such as trace-gas sensing, medical diagnosis, free-space communication, and light detection and ranging (LIDAR). In this thesis, we investigate a further increase of the performance of QC devices and, through meticulous device modeling and characterizations, gain a deeper understanding of several of their unique characteristics, especially their carrier transport and lifetime, their characteristic temperature, their waveguide loss and modal gain, their leakage current, and their transverse mode profile. First, in our quest to achieve higher performance, we investigate the effect of growth asymmetries on device transport characteristics. This investigation stems from recent studies on the role of interface roughness on intersubband scattering and device performance. Through a symmetric active core design, we find that interface roughness and ionized impurity scattering induced by dopant migration play a significant role in carrier transport through the device. Understanding how interface roughness affects intersubband scattering, in turn, we engineer the gain in QC devices by placing monolayer barriers at specific locations within the device band structure. These strategically placed additional thin barrier layers introduce roughness scattering into the device active region, thereby selectively decreasing the lower laser state lifetime and increasing population inversion necessary for laser action. Preliminary measurement results from modified devices reveal a 50% decrease in the emission broadening compared to the control structures, which should lead to a two-fold increase in gain. A special class of so-called "strong coupling" QC lasers recently emerged with high optical power and high efficiency at cryogenic temperatures. However their performances decay rather rapidly with temperature in both pulsed and continuous wave modes. Through detailed measurements and analysis, we investigate several possible causes of this shortcoming and propose design modifications for temperature performance improvement. While the strong coupling devices are efficient and powerful, their performance often suffers from unintentional and potentially harmful beam steering at high power. Here, we identify the root of this pointing instability to be from non-linear interactions between multiple transverse modes. And, to resolve this issue, we employ focused ion beam (FIB) milling to etch small lateral constrictions on top of the devices and fill them with metal. This has the effect of greatly reducing the intensity of higher order transverse modes as they propagate through the cavity. A good grasp of the microscopic details involved in QC device operations will result in better lasers, with high beam quality. This, in turn, will enable new applications, such as the detection of SO2 isotopologues near 7.4 micron, which is of particular importance for the study of ultraviolet photolysis and the sulfur cycle on Venus.

Biocompatible circuit-breaker chip for thermal management of biomedical microsystems

NASA Astrophysics Data System (ADS)

Luo, Yi; Dahmardeh, Masoud; Takahata, Kenichi

2015-05-01

This paper presents a thermoresponsive micro circuit breaker for biomedical applications specifically targeted at electronic intelligent implants. The circuit breaker is micromachined to have a shape-memory-alloy cantilever actuator as a normally closed temperature-sensitive switch to protect the device of interest from overheating, a critical safety feature for smart implants including those that are electrothermally driven with wireless micro heaters. The device is fabricated in a size of 1.5  ×  2.0  ×  0.46 mm3 using biocompatible materials and a chip-based titanium package, exhibiting a nominal cold-state resistance of 14 Ω. The breaker rapidly enters the full open condition when the chip temperature exceeds 63 °C, temporarily breaking the circuit of interest to lower its temperature until chip temperature drops to 51 °C, at which the breaker closes the circuit to allow current to flow through it again, physically limiting the maximum temperature of the circuit. This functionality is tested in combination with a wireless resonant heater powered by radio-frequency electromagnetic radiation, demonstrating self-regulation of heater temperature. The developed circuit-breaker chip operates in a fully passive manner that removes the need for active sensor and circuitry to achieve temperature regulation in a target device, contributing to the miniaturization of biomedical microsystems including electronic smart implants where thermal management is essential.

Electrical connection structure for a superconductor element

DOEpatents

Lallouet, Nicolas; Maguire, James

2010-05-04

The invention relates to an electrical connection structure for a superconductor element cooled by a cryogenic fluid and connected to an electrical bushing, which bushing passes successively through an enclosure at an intermediate temperature between ambient temperature and the temperature of the cryogenic fluid, and an enclosure at ambient temperature, said bushing projecting outside the ambient temperature enclosure. According to the invention, said intermediate enclosure is filled at least in part with a solid material of low thermal conductivity, such as a polyurethane foam or a cellular glass foam. The invention is applicable to connecting a superconductor cable at cryogenic temperature to a device for equipment at ambient temperature.

Hot-compress: A new postdeposition treatment for ZnO-based flexible dye-sensitized solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haque Choudhury, Mohammad Shamimul, E-mail: shamimul129@gmail.com; Department of Electrical and Electronic Engineering, International Islamic University Chittagong, b154/a, College Road, Chittagong 4203; Kishi, Naoki

2016-08-15

Highlights: • A new postdeposition treatment named hot-compress is introduced. • Hot-compression gives homogeneous compact layer ZnO photoanode. • I-V and EIS analysis data confirms the efficacy of this method. • Charge transport resistance was reduced by the application of hot-compression. - Abstract: This article introduces a new postdeposition treatment named hot-compress for flexible zinc oxide–base dye-sensitized solar cells. This postdeposition treatment includes the application of compression pressure at an elevated temperature. The optimum compression pressure of 130 Ma at an optimum compression temperature of 70 °C heating gives better photovoltaic performance compared to the conventional cells. The aptness ofmore » this method was confirmed by investigating scanning electron microscopy image, X-ray diffraction, current-voltage and electrochemical impedance spectroscopy analysis of the prepared cells. Proper heating during compression lowers the charge transport resistance, longer the electron lifetime of the device. As a result, the overall power conversion efficiency of the device was improved about 45% compared to the conventional room temperature compressed cell.« less

Fast Conformal Thermal Ablation in the Prostate with Transurethral Multi-Sectored Ultrasound Devices and MR Guidance

NASA Astrophysics Data System (ADS)

Kinsey, Adam M.; Diederich, Chris J.; Nau, William H.; Ross, Anthony B.; Pauly, Kim Butts; Rieke, Viola; Sommer, Graham

2007-05-01

Transurethral ultrasound applicators incorporating an array of multisectored tubular transducers were evaluated in theoretical simulations and in vivo canine prostates under MR guidance as a method for fast, conformal thermal therapy of the prostate. Comprehensive simulations with a biothermal model investigated the effect on lesion creation of sector size, perfusion, treatment time, rectal cooling, prostate target dimensions, and feedback controller parameters (maximum temperature, pilot points at boundary, update times). In vivo canine prostates (n = 4) were treated with trisectored ultrasound transducers (3 mm OD) under MR temperature monitoring to contour the ablation zone (>52 C for 1-2 min) to the boundary of the prostate. Contiguous thermal lesions extended 2 cm in radius from the urethra in less than 15 min and independent sector control simultaneously allowed for conformal treatment in the angular dimension. Experiments investigated sequential translation of the transducer assembly within the catheter for tailoring heat treatments to different partitions in the prostate (base, apex) without changing the initial setup. This treatment method offered greater lesion shape control in three dimensions and slightly lengthened the overall treatment time. The MR temperature images correlated with post-treatment histology and accurately controlled the heating to the target boundary. MR-based control of transurethral ultrasound devices appeared more practical with multisectored transducers compared to rotating curvilinear and planar applicators due to less stringent requirements on spatial and temporal MR parameters. This study demonstrated the applicability of these devices in the prostate for anterior-lateral BPH treatment, and whole gland or quadrant target volumes for cancer treatment.

Modelling of optoelectronic circuits based on resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

2017-08-01

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Silk Film Embossing System

NASA Astrophysics Data System (ADS)

Paquette, Mark S.

New tools are often required to facilitate new discoveries and test new methods. Commercial offerings can be prohibitively expensive and difficult to customize. The development of ad-hoc tools provides the most flexibility and provides an opportunity to modify and refine a technology. An embossing system was developed for silk film imprinting and stamping in order to facilitate and add versatility to the efforts involving micro- and nanoscale device manufacturing in biopolymers. This system features temperature controlled embossing surfaces, adjustable embossing pressures, and variable embossing times. The device can also be fitted with interchangeable temperature controlled embossing and stamping tools. The design, development, fabrication, applications, and future improvements are explored for the system. This device may facilitate new discoveries in the realm of biopolymer micro- and nanomanufacturing and may provide a path towards high volume production of silk film based technologies.

Unusual electro-optical behavior in a wide-temperature BPIII cell.

PubMed

Chen, Hui-Yu; Lu, Sheng-Feng; Hsieh, Yi-Chun

2013-04-22

A low driving voltage and fast response blue phase III (BPIII) liquid-crystal device with very low dielectric anisotropy is demonstrated. To stabilize BPIII in a wide temperature range (> 15°C), a chiral molecule with good solubility was chosen. By studying field-dependent polarization state of the transmitting light, it was found that the field-induced birefringence becomes saturated in the high field. However, the transmitting intensity exhibits a tendency to increase as the electric field increases. This indicates that the electro-optical behavior in BPIII device may be from the flexoelectric effect, which induces tilted optical axis and then induces birefringence. Because the phase transition from BPIII to chiral nematic phase does not happen, the device shows no hysteresis effect and no residual birefringence, exhibits fast response, and can be a candidate for fast photonic application.

Magnetic field controlled electronic state and electric field controlled magnetic state in α-Fe1.6Ga0.4O3 oxide

NASA Astrophysics Data System (ADS)

Lone, Abdul Gaffar; Bhowmik, R. N.

2018-04-01

We have prepared α-Fe1.6Ga0.4O3 (Ga doped α-Fe2O3) system in rhombohedral phase. The material has shown room temperature ferroelectric and ferromagnetic properties. The existence of magneto-electric coupling at room temperature has been confirmed by the experimental observation of magnetic field controlled electric properties and electric field controlled magnetization. The current-voltage characteristics were controlled by external magnetic field. The magnetic state switching and exchange bias effect are highly sensitive to the polarity and ON and OFF modes of external electric field. Such materials can find novel applications in magneto-electronic devices, especially in the field of electric field controlled spintronics devices and energy storage devices which need low power consumption.

Miniature Microwave Applicator for Murine Bladder Hyperthermia Studies

PubMed Central

Salahi, Sara; Maccarini, Paolo F.; Rodrigues, Dario B.; Etienne, Wiguins; Landon, Chelsea D.; Inman, Brant A.; Dewhirst, Mark W.; Stauffer, Paul R.

2012-01-01

Purpose Novel combinations of heat with chemotherapeutic agents are often studied in murine tumor models. Currently, no device exists to selectively heat small tumors at depth in mice. In this project, we modelled, built and tested a miniature microwave heat applicator, the physical dimensions of which can be scaled to adjust the volume and depth of heating to focus on the tumor volume. Of particular interest is a device that can selectively heat murine bladder. Materials and Methods Using Avizo® segmentation software, we created a numerical mouse model based on micro-MRI scan data. The model was imported into HFSS™ simulation software and parametric studies were performed to optimize the dimensions of a water-loaded circular waveguide for selective power deposition inside a 0.15ml bladder. A working prototype was constructed operating at 2.45GHz. Heating performance was characterized by mapping fiber-optic temperature sensors along catheters inserted at depths of 0-1mm (subcutaneous), 2-3mm (vaginal), and 4-5mm (rectal) below the abdominal wall, with the mid-depth catheter adjacent to the bladder. Core temperature was monitored orally. Results Thermal measurements confirm the simulations which demonstrate that this applicator can provide local heating at depth in small animals. Measured temperatures in murine pelvis show well-localized bladder heating to 42-43°C while maintaining normothermic skin and core temperatures. Conclusions Simulation techniques facilitate the design optimization of microwave antennas for use in pre-clinical applications such as localized tumor heating in small animals. Laboratory measurements demonstrate the effectiveness of a new miniature water-coupled microwave applicator for localized heating of murine bladder. PMID:22690856

A lithium-ion capacitor model working on a wide temperature range

NASA Astrophysics Data System (ADS)

Barcellona, S.; Piegari, L.

2017-02-01

Energy storage systems are spreading both in stationary and transport applications. Among innovative storage devices, lithium ion capacitors (LiCs) are very interesting. They combine the advantages of both traditional electric double layer capacitors (EDLCs) and lithium ion batteries (LiBs). The behavior of this device is much more similar to ELDCs than to batteries. For this reason, several models developed for traditional ELDCs were extended to LiCs. Anyway, at low temperatures LiCs behavior is quite different from ELDCs and it is more similar to a LiB. Consequently, EDLC models works fine at room temperature but give worse results at low temperatures. This paper proposes a new electric model that, overcoming this issue, is a valid solution in a wide temperature range. Based on only five parameters, depending on polarization voltage and temperature, the proposed model is very simple to be implemented. Its accuracy is verified through experimental tests. From the reported results, it is also shown that, at very low temperatures, the dependence of the resistance from the current has to be taken into account.

High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

NASA Astrophysics Data System (ADS)

Jiang, C.; Rumyantsev, S. L.; Samnakay, R.; Shur, M. S.; Balandin, A. A.

2015-02-01

We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a "memory step," was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.

Low Temperature Deposition and Characterization of N- and P-Type Silicon Carbide Thin Films and Associated Ohmic and Schottky Contacts

DTIC Science & Technology

1993-12-01

properties which make it an attractive material for electronic devices used in high temperature and power applications. In order to make useful...remote plasma chamber. The processing parameters were a pressure of 18 mTorr and a power output of 20 Watts; a flow of 10 sccm of hydrogen gas was...Table I. Growth Conditions for the AIN films Temperature 1050 C Al evaporation temperature 1260 "C Nitrogen flow rate 3.5 sccrn Microwave power 100W

Fabrication and characterization of SU-8-based capacitive micromachined ultrasonic transducer for airborne applications

NASA Astrophysics Data System (ADS)

Joseph, Jose; Singh, Shiv Govind; Vanjari, Siva Rama Krishna

2018-01-01

We present a successful fabrication and characterization of a capacitive micromachined ultrasonic transducer (CMUT) with SU-8 as the membrane material. The goal of this research is to develop a post-CMOS compatible CMUT that can be monolithically integrated with the CMOS circuitry. The fabrication is based on a simple, three mask process, with all wet etching steps involved so that the device can be realized with minimal laboratory conditions. The maximum temperature involved in the whole process flow was 140°C, and hence, it is post-CMOS compatible. The fabricated device exhibited a resonant frequency of 835 kHz with bandwidth 62 kHz, when characterized in air. The pull-in and snapback characteristics of the device were analyzed. The influence of membrane radius on the center frequency and bandwidth was also experimentally evaluated by fabricating CMUTs with membrane radius varying from 30 to 54 μm with an interval of 4 μm. These devices were vibrating at frequencies from 5.2 to 1.8 MHz with an average Q-factor of 23.41. Acoustic characterization of the fabricated devices was performed in air, demonstrating the applicability of SU-8 CMUTs in airborne applications.

Remote temperature measurements in femto-liter volumes using dual-focus-Fluorescence Correlation Spectroscopy.

PubMed

Müller, Claus B; Weiss, Kerstin; Loman, Anastasia; Enderlein, Jörg; Richtering, Walter

2009-05-07

Remote temperature measurements in microfluidic devices with micrometer spatial resolution are important for many applications in biology, biochemistry and chemistry. The most popular methods use the temperature-dependent fluorescence lifetime of Rhodamine B, or the temperature-dependent size of thermosensitive materials such as microgel particles. Here, we use the recently developed method of dual-focus fluorescence correlation spectroscopy (2fFCS) for measuring the absolute diffusion coefficient of small fluorescent molecules at nanomolar concentrations and show how these data can be used for remote temperature measurements on a micrometer scale. We perform comparative temperature measurements using all three methods and show that the accuracy of 2fFCS is comparable or even better than that achievable with Rhodamine B fluorescence lifetime measurements. The temperature dependent microgel swelling leads to an enhanced accuracy within a narrow temperature range around the volume phase transition temperature, but requires the availability of specific microgels, whereas 2fFCS is applicable under very general conditions.

High thermoelectricpower factor in graphene/hBN devices

PubMed Central

Duan, Junxi; Wang, Xiaoming; Lai, Xinyuan; Li, Guohong; Taniguchi, Takashi; Zebarjadi, Mona; Andrei, Eva Y.

2016-01-01

Fast and controllable cooling at nanoscales requires a combination of highly efficient passive cooling and active cooling. Although passive cooling in graphene-based devices is quite effective due to graphene’s extraordinary heat conduction, active cooling has not been considered feasible due to graphene’s low thermoelectric power factor. Here, we show that the thermoelectric performance of graphene can be significantly improved by using hexagonal boron nitride (hBN) substrates instead of SiO2. We find the room temperature efficiency of active cooling in the device, as gauged by the power factor times temperature, reaches values as high as 10.35 W⋅m−1⋅K−1, corresponding to more than doubling the highest reported room temperature bulk power factors, 5 W⋅m−1⋅K−1, in YbAl3, and quadrupling the best 2D power factor, 2.5 W⋅m−1⋅K−1, in MoS2. We further show that the Seebeck coefficient provides a direct measure of substrate-induced random potential fluctuations and that their significant reduction for hBN substrates enables fast gate-controlled switching of the Seebeck coefficient polarity for applications in integrated active cooling devices. PMID:27911824

30 CFR 7.97 - Application requirements.

Code of Federal Regulations, 2014 CFR

2014-07-01

... sensors, flame arresters, exhaust conditioner, emergency intake air shutoff device, automatic fuel shutoff...-cooled components, coolant lines, radiator, surge tank, temperature sensors, and orifices; arrows... internal parts, exhaust inlet and outlet, sensors, and the exhaust gas path through the exhaust conditioner...

30 CFR 7.97 - Application requirements.

Code of Federal Regulations, 2012 CFR

2012-07-01

... sensors, flame arresters, exhaust conditioner, emergency intake air shutoff device, automatic fuel shutoff...-cooled components, coolant lines, radiator, surge tank, temperature sensors, and orifices; arrows... internal parts, exhaust inlet and outlet, sensors, and the exhaust gas path through the exhaust conditioner...

30 CFR 7.97 - Application requirements.

Code of Federal Regulations, 2013 CFR

2013-07-01

... sensors, flame arresters, exhaust conditioner, emergency intake air shutoff device, automatic fuel shutoff...-cooled components, coolant lines, radiator, surge tank, temperature sensors, and orifices; arrows... internal parts, exhaust inlet and outlet, sensors, and the exhaust gas path through the exhaust conditioner...

40 CFR 65.145 - Nonflare control devices used to control emissions from storage vessels or low-throughput...

Code of Federal Regulations, 2012 CFR

2012-07-01

... inlet stream and, if applicable, the desorption schedule, the regeneration stream pressure or temperature, and the flow rate of the regeneration stream. For vacuum desorption, pressure drop shall be...

40 CFR 65.145 - Nonflare control devices used to control emissions from storage vessels or low-throughput...

Code of Federal Regulations, 2013 CFR

2013-07-01

... inlet stream and, if applicable, the desorption schedule, the regeneration stream pressure or temperature, and the flow rate of the regeneration stream. For vacuum desorption, pressure drop shall be...

40 CFR 63.985 - Nonflare control devices used to control emissions from storage vessels and low throughput...

Code of Federal Regulations, 2011 CFR

2011-07-01

... inlet stream and, if applicable, the desorption schedule, the regeneration stream pressure or temperature, and the flow rate of the regeneration stream. For vacuum desorption, pressure drop shall be...

40 CFR 63.985 - Nonflare control devices used to control emissions from storage vessels and low throughput...

Code of Federal Regulations, 2012 CFR

2012-07-01

... inlet stream and, if applicable, the desorption schedule, the regeneration stream pressure or temperature, and the flow rate of the regeneration stream. For vacuum desorption, pressure drop shall be...

40 CFR 63.985 - Nonflare control devices used to control emissions from storage vessels and low throughput...

Code of Federal Regulations, 2014 CFR

2014-07-01

... inlet stream and, if applicable, the desorption schedule, the regeneration stream pressure or temperature, and the flow rate of the regeneration stream. For vacuum desorption, pressure drop shall be...

40 CFR 65.145 - Nonflare control devices used to control emissions from storage vessels or low-throughput...

Code of Federal Regulations, 2014 CFR

2014-07-01

... inlet stream and, if applicable, the desorption schedule, the regeneration stream pressure or temperature, and the flow rate of the regeneration stream. For vacuum desorption, pressure drop shall be...

40 CFR 63.985 - Nonflare control devices used to control emissions from storage vessels and low throughput...

Code of Federal Regulations, 2013 CFR

2013-07-01

... inlet stream and, if applicable, the desorption schedule, the regeneration stream pressure or temperature, and the flow rate of the regeneration stream. For vacuum desorption, pressure drop shall be...

40 CFR 65.145 - Nonflare control devices used to control emissions from storage vessels or low-throughput...

Code of Federal Regulations, 2011 CFR

2011-07-01

... inlet stream and, if applicable, the desorption schedule, the regeneration stream pressure or temperature, and the flow rate of the regeneration stream. For vacuum desorption, pressure drop shall be...

Geometrical effects on the concentrated behavior of heat flux in metamaterials thermal harvesting devices

NASA Astrophysics Data System (ADS)

Xu, Guoqiang; Zhang, Haochun; Xie, Ming; Jin, Yan

2017-10-01

Thermal harvesting devices based on transformation optics, which can manipulate the heat flux concentration significantly through rational arrangements of the conductivities, have attracted considerable interest owing to several great potential applications of the technique for high-efficiency thermal conversion and collection. However, quantitative studies on the geometrical effects, particularly wedge angles, on the harvesting behaviors are rare. In this paper, we adopt wedge structure-based thermal harvesting schemes, and focus on the effects of the geometrical parameters including the radii ratios and wedge angles on the harvesting performance. The temperature deformations at the boundaries of the compressional region and temperature gradients for the different schemes with varying design parameters are investigated. Moreover, a concept for temperature stabilization was derived to evaluate the fluctuation in the energy distributions. In addition, the effects of interface thermal resistances have been investigated. Considering the changes in the radii ratios and wedge angles, we proposed a modification of the harvesting efficiency to quantitatively assess the concentration performance, which was verified through random tests and previously fabricated devices. In general, this study indicates that a smaller radii ratio contributes to a better harvesting behavior, but causes larger perturbations in the thermal profiles owing to a larger heat loss. We also find that a smaller wedge angle is beneficial to ensuring a higher concentration efficiency with less energy perturbations. These findings can be used to guide the improvement of a thermal concentrator with a high efficiency in reference to its potential applications as novel heat storage, thermal sensors, solar cells, and thermoelectric devices.

Thermoelectric Air/Soil Energy-Harvesting Device

NASA Technical Reports Server (NTRS)

Snyder, Jeffrey; Fleurial, Jean-Pierre; Lawrence, Eric

2005-01-01

A proposed thermoelectric device would exploit natural temperature differences between air and soil to harvest small amounts of electric energy. Because the air/soil temperature difference fluctuates between nighttime and daytime, it is almost never zero, and so there is almost always some energy available for harvesting. Unlike photovoltaic cells, the proposed device could operate in the absence of sunlight. Unlike a Stirling engine, which could be designed to extract energy from the air/soil temperature difference, the proposed device would contain no moving parts. The main attractive feature of the proposed device would be high reliability. In a typical application, this device would be used for low-power charging of a battery that would, in turn, supply high power at brief, infrequent intervals for operating an instrumentation package containing sensors and communication circuits. The device (see figure) would include a heat exchanger buried in soil and connected to a heat pipe extending up to a short distance above the ground surface. A thermoelectric microgenerator (TEMG) would be mounted on top of the heat pipe. The TEMG could be of an advanced type, now under development, that could maintain high (relative to prior thermoelectric generators) power densities at small temperature differentials. A heat exchanger exposed to the air would be mounted on top of the TEMG. It would not matter whether the air was warmer than the soil or the soil warmer than the air: as long as there was a nonzero temperature difference, heat would flow through the device and electricity would be generated. A study of factors that could affect the design and operation of the device has been performed. These factors include the thermal conductances of the soil, the components of the device, the contacts between the components of the device, and the interfaces between the heat exchangers and their environments. The study included experiments that were performed on a model of the device to demonstrate feasibility. Because a TEMG suitable for this device was not available, a brass dummy component having a known thermal conductance of 1.68 W/K was substituted for the TEMG in the models to enable measurement of heat flows. The model included a water-based heat pipe 30 in. (76.2 cm) long and 1 in. (2.54 cm) in diameter, wrapped with polyethylene insulation to reduce radial heat flow. Several different side heat exchangers were tested. On the basis of the measurements, it was predicted that if a prototype of the device were equipped with a TEMG, daily temperature fluctuations would cause its output power to fluctuate between 0 and about 0.1 mW, peaking to 0.35 mW during early afternoon.

Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

NASA Astrophysics Data System (ADS)

Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

2018-01-01

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

GaInP2/GaAs tandem cells for space applications

NASA Technical Reports Server (NTRS)

Olson, J. M.; Kurtz, S. R.; Kibbler, A. E.; Bertness, K. A.; Friedman, D. J.

1991-01-01

The monolithic, tunnel-junction-interconnected tandem combination of a GaInP2 top cell and a GaAs bottom cell has achieved a one-sun, AM1.5 efficiency of 27.3 percent. With proper design of the top cell, air mass zero (AM0) efficiencies greater than 25 percent are possible. A description and the advantages of this device for space applications are presented and discussed. The advantages include high-voltage, low-current, two-terminal operation for simple panel fabrication, and high conversion efficiency with low-temperature coefficient. Also, because the active regions of the device are Al-free, the growth of high efficiency devices is not affected by trace levels of O2 or H2O in the MOCVD growth system.

Extreme Temperature Operation of a 10 MHz Silicon Oscillator Type STCL1100

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2008-01-01

The performance of STMicroelectronics 10 MHz silicon oscillator was evaluated under exposure to extreme temperatures. The oscillator was characterized in terms of its output frequency stability, output signal rise and fall times, duty cycle, and supply current. The effects of thermal cycling and re-start capability at extreme low and high temperatures were also investigated. The silicon oscillator chip operated well with good stability in its output frequency over the temperature region of -50 C to +130 C, a range that by far exceeded its recommended specified boundaries of -20 C to +85 C. In addition, this chip, which is a low-cost oscillator designed for use in applications where great accuracy is not required, continued to function at cryogenic temperatures as low as - 195 C but at the expense of drop in its output frequency. The STCL1100 silicon oscillator was also able to re-start at both -195 C and +130 C, and it exhibited no change in performance due to the thermal cycling. In addition, no physical damage was observed in the packaging material due to extreme temperature exposure and thermal cycling. Therefore, it can be concluded that this device could potentially be used in space exploration missions under extreme temperature conditions in microprocessor and other applications where tight clock accuracy is not critical. In addition to the aforementioned screening evaluation, additional testing, however, is required to fully establish the reliability of these devices and to determine their suitability for long-term use.

Headset Bluetooth and cell phone based continuous central body temperature measurement system.

PubMed

Sanches, J Miguel; Pereira, Bruno; Paiva, Teresa

2010-01-01

The accurate measure of the central temperature is a very important physiologic indicator in several clinical applications, namely, in the characterization and diagnosis of sleep disorders. In this paper a simple system is described to continuously measure the body temperature at the ear. An electronic temperature sensor is coupled to the microphone of a common commercial auricular Bluetooth device that sends the temperature measurements to a mobile phone to which is paired. The measurements are stored at the mobile phone and periodically sent to a medical facility by email or SMS (short messaging service).

Calculation of the figure of merit for carbon nanotubes based devices

NASA Astrophysics Data System (ADS)

Vaseashta, Ashok

2004-03-01

The dimensionality of a system has a profound influence on its physical behavior. With advances in technology over the past few decades, it has become possible to fabricate and study reduced-dimensional systems in which electrons are strongly confined in one or more dimensions. In the case of 1-D electron systems, most of the results, such as conductance quantization, have been explained in terms of non-interacting electrons. In contrast to the cases of 2D and 3D systems, the question of what roles electron-electron interactions play in real 1-D systems has been difficult to address, because of the difficulty in obtaining long, relatively disorder free 1-D wires. Since their first discovery and fabrication in 1991, carbon nanotubes (CNTs) have received considerable attention because of the prospect of new fundamental science and many potential applications. Hence, it has been possible to conduct studies of the electrons in 1-D. Carbon nanotubes are of considerable technological importance due to their excellent mechanical, electrical, and chemical characteristics. The potential technological applications include electronics, opto-electronics and biomedical sensors. The applications of carbon nanotubes include quantum wire interconnects, diodes and transistors for computing, capacitors, data storage devices, field emitters, flat panel displays and terahertz oscillators. One of the most remarkable characteristics is the possibility of bandgap engineering by controlling the microstructure. Hence, a pentagon-heptagon defect in the hexagonal network can connect a metallic to a semiconductor nanotube, providing an Angstrom-scale hetero-junction with a device density approximately 10^4 times greater than present day microelectronics. Also, successfully contacted carbon nanotubes have exhibited a large number of useful quantum electronic and low dimensional transport phenomena, such as true quantum wire behaviors, room temperature field effect transistors, room temperature single electron transistors, Luttinger-liquid behavior, the Aharonov Bohm effect, and Fabry-Perot interference effects. Hence it is evident that CNT can be used for a variety of applications. To use CNT based devices, it is critical to know the relative advantage of using CNTs over other known electronic materials. The figure of merit for CNT based devices is not reported so far. It is the objective of this investigation to calculate the figure of merit and present such results. Such calculations will enable researchers to focus their research for specific device designs where CNT based devices show a marked improvement over conventional semiconductor devices.

High temperature experimental characterization of microscale thermoelectric effects

NASA Astrophysics Data System (ADS)

Favaloro, Tela

Thermoelectric devices have been employed for many years as a reliable energy conversion technology for applications ranging from the cooling of sensors or charge coupled devices to the direct conversion of heat into electricity for remote power generation. However, its relatively low conversion efficiency has limited the implementation of thermoelectric materials for large scale cooling and waste heat recovery applications. Recent advances in semiconductor growth technology have enabled the precise and selective engineering of material properties to improve the thermoelectric figure of merit and thus the efficiency of thermoelectric devices. Accurate characterization at the intended operational temperature of novel thermoelectric materials is a crucial component of the optimization process in order to fundamentally understand material behavior and evaluate performance. The objective of this work is to provide the tools necessary to characterize high efficiency bulk and thin-film materials for thermoelectric energy conversion. The techniques developed here are not bound to specific material or devices, but can be generalized to any material system. Thermoreflectance imaging microscopy has proven to be invaluable for device thermometry owing to its high spatial and temporal resolutions. It has been utilized in this work to create two-dimensional temperature profiles of thermoelectric devices during operation used for performance analysis of novel materials, identification of defects, and visualization of high speed transients in a high-temperature imaging thermostat. We report the development of a high temperature imaging thermostat capable of high speed transient thermoelectric characterization. In addition, we present a noninvasive method for thermoreflectance coefficient calibration ideally suited for vacuum and thus high temperature employment. This is the first analysis of the thermoreflectance coefficient of commonly used metals at high-temperatures. High temperature vacuum thermostats are designed and fabricated with optical imaging capability and interchangeable measurement stages for various electrical and thermoelectric characterizations. We demonstrate the simultaneous measurement of in-plane electrical conductivity and Seebeck coefficient of thin-film or bulk thermoelectric materials. Furthermore, we utilize high-speed circuitry to implement the transient Harman technique and directly determine the cross-plane figure of merit of thin film thermoelectric materials at high temperatures. Transient measurements on thin film devices are subject to complications from the growth substrate, non-ideal contacts and other detrimental thermal and electrical effects. A strategy is presented for optimizing device geometry to mitigate the impact of these parasitics. This design enabled us to determine the cross-plane thermoelectric material properties in a single high temperature measurement of a 25mum InGaAs thin film with embedded ErAs (0.2%) nanoparticles using the bipolar transient Harman technique in conjunction with thermoreflectance thermal imaging. This approach eliminates discrepancies and potential device degradation from the multiple measurements necessary to obtain individual material parameters. Finite element method simulations are used to analyze non-uniform current and temperature distributions over the device area and determine the three dimensional current path for accurate extraction of material properties from the thermal images. Results match with independent measurements of thermoelectric material properties for the same material composition, validating this approach. We apply high magnification thermoreflectance imaging to create temperature maps of vanadium dioxide nanobeams and examine electro-thermal energy conversion along the nanobeam length. The metal to insulator transition of strongly correlated materials is subject to strong lattice coupling which brings about the unique one-dimensional alignment of metal-insulator domains along nanobeams. Many studies have investigated the effects of stress on the metal to insulator transition and hence the phase boundary, but few have directly examined the temperature profile across the metal-insulating interface. Here, thermoreflectance microscopy reveals the underlying behavior of single-crystalline VO2 nanobeams in the phase coexisting regime. We directly observe highly localized alternating Peltier heating and cooling as well as Joule heating concentrated at the domain interfaces, indicating the significance of the domain walls and band offsets. Moreover, we are able to elucidate strain accumulation along the nanobeam and distinguish between two insulating phases of VO 2 through detection of the opposite polarity of their respective thermoreflectance coefficients.

Physical basics of endovenous laser treatment and potential of innovative developments

NASA Astrophysics Data System (ADS)

Sroka, R.; Esipova, A.; Schmedt, C. G.

2017-04-01

During the last decade, endoluminal laser treatment (ELT) has been rapidly developing. Protocols using radially emitting ELT fibres in combination with infrared laser light show clinical advantages over the bare-fibre technique and near infrared irradiation. Although the clinical response rate is high several side effects occurred. Innovative light application systems and feedback systems are therefore being under development to potentially improve the clinical situation. The irradiation patterns of bare fibres and radially emitting 1-ring and 2-ring fibres were measured using the goniometer technique. The device robustness, device handling and tissue effects were investigated using the established ox-foot-model. Furthermore, temperature measurements were performed either intraluminal within the irradiation field using a tiny temperature sensor and on the outer surface of the vessel wall by means of a thermocamera. All fibres showed sufficient mechanical and thermal robustness. The destruction threshold is far beyond the light powers employed during clinical application. The 1-ring fibre showed very high peak temperatures for a short time, while the 2-ring-fibre hold its somewhat lower maximum temperature for a longer time. Both forms of energy application resulted in the desired shrinkage and destruction effect. In this regard, the handling of the 2-ring fibre appears subjectively more convenient with reduced sticking-related problems. Acute tissue effects could be investigated to improve the understanding especially of the interaction between handling, maneuvers and tissue effects. The 2-ring radially emitting fibre in combination with IR laser light and specific application parameters showed improved handling and safety features.

Effect of Cold Temperature on the Dielectric Constant of Soil

DTIC Science & Technology

2012-04-01

explosive device (IED) threats is ground-penetrating radar ( GPR ). Proper development of GPR technology for this application requires a unique...success or failure of GPR as a detection technique. One soil property of interest to radar engineers is the dielectric constant. Previous...results to temperatures, moisture levels, and frequencies relevant to GPR systems. 2. Dielectric Constant and the Ring-resonator Concept The two

Dental resins properties studied by Bragg gratings

NASA Astrophysics Data System (ADS)

Kalinowski, Hypolito José; Gebert de Oliveira Franco, Ana Paula; Karam, Leandro Zen

2017-08-01

Fibre Bragg sensors are a key device in biomedical research for simultaneous measurement of deformations and temperature. The present study shows results from the characterization of dental resin materials with different composition and applications. The results show that all investigated polymer materials demonstrate a temperature rise within the first few seconds after starting activation procedure. The mode of activation and the material composition influence the polymerization shrinkage values.

Graphene-based topological insulator with an intrinsic bulk band gap above room temperature.

PubMed

Kou, Liangzhi; Yan, Binghai; Hu, Feiming; Wu, Shu-Chun; Wehling, Tim O; Felser, Claudia; Chen, Changfeng; Frauenheim, Thomas

2013-01-01

Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as the quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized dissipationless currents. However, existing 2D TIs realized in HgTe and InAs/GaSb suffer from small bulk gaps (<10 meV) well below room temperature, thus limiting their application in electronic and spintronic devices. Here, we report a new 2D TI comprising a graphene layer sandwiched between two Bi2Se3 slabs that exhibits a large intrinsic bulk band gap of 30-50 meV, making it viable for room-temperature applications. Distinct from previous strategies for enhancing the intrinsic spin-orbit coupling effect of the graphene lattice, the present graphene-based TI operates on a new mechanism of strong inversion between graphene Dirac bands and Bi2Se3 conduction bands. Strain engineering leads to effective control and substantial enhancement of the bulk gap. Recently reported synthesis of smooth graphene/Bi2Se3 interfaces demonstrates the feasibility of experimental realization of this new 2D TI structure, which holds great promise for nanoscale device applications.

Single-crystalline aluminum film for ultraviolet plasmonic nanolasers

PubMed Central

Chou, Bo-Tsun; Chou, Yu-Hsun; Wu, Yen-Mo; Chung, Yi-Cheng; Hsueh, Wei-Jen; Lin, Shih-Wei; Lu, Tien-Chang; Lin, Tzy-Rong; Lin, Sheng-Di

2016-01-01

Significant advances have been made in the development of plasmonic devices in the past decade. Plasmonic nanolasers, which display interesting properties, have come to play an important role in biomedicine, chemical sensors, information technology, and optical integrated circuits. However, nanoscale plasmonic devices, particularly those operating in the ultraviolet regime, are extremely sensitive to the metal and interface quality. Thus, these factors have a significant bearing on the development of ultraviolet plasmonic devices. Here, by addressing these material-related issues, we demonstrate a low-threshold, high-characteristic-temperature metal-oxide-semiconductor ZnO nanolaser that operates at room temperature. The template for the ZnO nanowires consists of a flat single-crystalline Al film grown by molecular beam epitaxy and an ultrasmooth Al2O3 spacer layer synthesized by atomic layer deposition. By effectively reducing the surface plasmon scattering and metal intrinsic absorption losses, the high-quality metal film and the sharp interfaces formed between the layers boost the device performance. This work should pave the way for the use of ultraviolet plasmonic nanolasers and related devices in a wider range of applications. PMID:26814581

The electro-optic mechanism and infrared switching dynamic of the hybrid multilayer VO2/Al:ZnO heterojunctions.

PubMed

Zhang, Peng; Zhang, Wu; Wang, Junyong; Jiang, Kai; Zhang, Jinzhong; Li, Wenwu; Wu, Jiada; Hu, Zhigao; Chu, Junhao

2017-06-30

Active and widely controllable phase transition optical materials have got rapid applications in energy-efficient electronic devices, field of meta-devices and so on. Here, we report the optical properties of the vanadium dioxide (VO 2 )/aluminum-doped zinc oxide (Al:ZnO) hybrid n-n type heterojunctions and the corresponding electro-optic performances of the devices. Various structures are fabricated to compare the discrepancy of the optical and electrical characteristics. It was found that the reflectance spectra presents the wheel phenomenon rather than increases monotonically with temperature at near-infrared region range. The strong interference effects was found in the hybrid multilayer heterojunction. In addition, the phase transition temperature decreases with increasing the number of the Al:ZnO layer, which can be ascribed to the electron injection to the VO 2 film from the Al:ZnO interface. Affected by the double layer Al:ZnO, the abnormal Raman vibration mode was presented in the insulator region. By adding the external voltage on the Al 2 O 3 /Al:ZnO/VO 2 /Al:ZnO, Al 2 O 3 /Al:ZnO/VO 2 and Al 2 O 3 /VO 2 /Al:ZnO thin-film devices, the infrared optical spectra of the devices can be real-time manipulated by an external voltage. The main effect of joule heating and assistant effect of electric field are illustrated in this work. It is believed that the results will add a more thorough understanding in the application of the VO 2 /transparent conductive film device.

New Technology for Microfabrication and Testing of a Thermoelectric Device for Generating Mobile Electrical Power

NASA Technical Reports Server (NTRS)

Prasad, Narashimha S.; Taylor, Patrick J.; Trivedi, Sudhir B.; Kutcher, Susan

2010-01-01

We report the results of fabrication and testing of a thermoelectric power generation module. The module was fabricated using a new "flip-chip" module assembly technique that is scalable and modular. This technique results in a low value of contact resistivity ( < or = 10(exp 5) Ohms-sq cm). It can be used to leverage new advances in thin-film and nanostructured materials for the fabrication of new miniature thermoelectric devices. It may also enable monolithic integration of large devices or tandem arrays of devices on flexible or curved surfaces. Under mild testing, a power of 22 mW/sq cm was obtained from small (<100 K) temperature differences. At higher, more realistic temperature differences, approx.500 K, where the efficiency of these materials greatly improves, this power density would scale to between 0.5 and 1 Watt/cm2. These results highlight the excellent potential for the generation and scavenging of electrical power of practical and usable magnitude for remote applications using thermoelectric power generation technologies.

Infrared charge-injection-device array performance at low background

NASA Technical Reports Server (NTRS)

Mccreight, C. R.; Goebel, J. H.

1981-01-01

Low-background tests of a 1 x 32 Si:Bi charge-injection-device (CID) IR detector are carried out to evaluate its feasibility for space-based astronomical observations. Optimum performance is obtained at a temperature of 11 K. The sensitivity is found to compare well with that of discrete extrinsic silicon photoconductors. The measured sensitivity and the apparent absence of anomalous effects make extrinsic silicon CID arrays very promising for astronomical applications.

Direct Electricity from Heat: A Solution to Assist Aircraft Power Demands

NASA Technical Reports Server (NTRS)

Goldsby, Jon C.

2010-01-01

A thermionic device produces an electrical current with the application of a thermal gradient whereby the temperature at one electrode provides enough thermal energy to eject electrons. The system is totally predicated on the thermal gradient and the work function of the electrode collector relative to the emitter electrode. Combined with a standard thermoelectric device high efficiencies may result, capable of providing electrical energy from the waste heat of gas turbine engines.

High process yield rates of thermoplastic nanofluidic devices using a hybrid thermal assembly technique.

PubMed

Uba, Franklin I; Hu, Bo; Weerakoon-Ratnayake, Kumuditha; Oliver-Calixte, Nyote; Soper, Steven A

2015-02-21

Over the past decade, thermoplastics have been used as alternative substrates to glass and Si for microfluidic devices because of the diverse and robust fabrication protocols available for thermoplastics that can generate high production rates of the desired structures at low cost and with high replication fidelity, the extensive array of physiochemical properties they possess, and the simple surface activation strategies that can be employed to tune their surface chemistry appropriate for the intended application. While the advantages of polymer microfluidics are currently being realized, the evolution of thermoplastic-based nanofluidic devices is fraught with challenges. One challenge is assembly of the device, which consists of sealing a cover plate to the patterned fluidic substrate. Typically, channel collapse or substrate dissolution occurs during assembly making the device inoperable resulting in low process yield rates. In this work, we report a low temperature hybrid assembly approach for the generation of functional thermoplastic nanofluidic devices with high process yield rates (>90%) and with a short total assembly time (16 min). The approach involves thermally sealing a high T(g) (glass transition temperature) substrate containing the nanofluidic structures to a cover plate possessing a lower T(g). Nanofluidic devices with critical feature sizes ranging between 25-250 nm were fabricated in a thermoplastic substrate (T(g) = 104 °C) and sealed with a cover plate (T(g) = 75 °C) at a temperature significantly below the T(g) of the substrate. Results obtained from sealing tests revealed that the integrity of the nanochannels remained intact after assembly and devices were useful for fluorescence imaging at high signal-to-noise ratios. The functionality of the assembled devices was demonstrated by studying the stretching and translocation dynamics of dsDNA in the enclosed thermoplastic nanofluidic channels.

Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

NASA Astrophysics Data System (ADS)

Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

2017-11-01

A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

Prospects for small cryocoolers. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radebaugh, R.

1982-01-01

Small cryocoolers are commonly used in the areas of infrared detection, satellite communication, and cryopumps. Some emerging application areas deal with SQUID and Josephson junction devices, which require temperatures of about 8 K or below. The need for high reliability in these small cryocoolers has dictated the use of regenerative-cycle machines, but such machines are presently limited to temperatures above about 8 K. This paper discusses some of the research being done to improve reliability, decrease noise, and reduce the low-temperature limit of small cryocoolers.

Advances in MMIC technology for communications satellites

NASA Technical Reports Server (NTRS)

Leonard, Regis F.

1992-01-01

This paper discusses NASA Lewis Research Center's program for development of monolithic microwave integrated circuits (MMIC) for application in space communications. Emphasis will be on the improved performance in power amplifiers and low noise receivers which has been made possible by the development of new semiconductor materials and devices. Possible applications of high temperature superconductivity for space communications will also be presented.

Polymer planar waveguide Bragg gratings: fabrication, characterization, and sensing applications

NASA Astrophysics Data System (ADS)

Rosenberger, M.; Hessler, S.; Pauer, H.; Girschikofsky, M.; Roth, G. L.; Adelmann, B.; Woern, H.; Schmauss, B.; Hellmann, R.

2017-02-01

In this contribution, we give a comprehensive overview of the fabrication, characterization, and application of integrated planar waveguide Bragg gratings (PPBGs) in cyclo-olefin copolymers (COC). Starting with the measurement of the refractive index depth profile of integrated UV-written structures in COC by phase shifting Mach-Zehnder- Interferometry, we analyze the light propagation using numerical simulations. Furthermore, we show the rapid fabrication of humidity insensitive polymer waveguide Bragg gratings in cyclo-olefin copolymers and discuss the influence of the UV-dosage onto the spectral characteristics and the transmission behavior of the waveguide. Based on these measurements we exemplify that our Bragg gratings exhibit a reflectivity of over 99 % and are highly suitable for sensing applications. With regard to a negligible affinity to absorb water and in conjunction with high temperature stability these polymer devices are ideal for mechanical deformation sensing. Since planar structures are not limited to tensile but can also be applied for measuring compressive strain, we manufacture different functional devices and corroborate their applicability as optical sensors. Exemplarily, we highlight a temperature referenced PPBG sensor written into a femtosecond-laser cut tensile test geometry for tensile and compressive strain sensing. Furthermore, a flexible polymer planar shape sensor is presented.

Molecular Rotors as Switches

PubMed Central

Xue, Mei; Wang, Kang L.

2012-01-01

The use of a functional molecular unit acting as a state variable provides an attractive alternative for the next generations of nanoscale electronics. It may help overcome the limits of conventional MOSFETd due to their potential scalability, low-cost, low variability, and highly integratable characteristics as well as the capability to exploit bottom-up self-assembly processes. This bottom-up construction and the operation of nanoscale machines/devices, in which the molecular motion can be controlled to perform functions, have been studied for their functionalities. Being triggered by external stimuli such as light, electricity or chemical reagents, these devices have shown various functions including those of diodes, rectifiers, memories, resonant tunnel junctions and single settable molecular switches that can be electronically configured for logic gates. Molecule-specific electronic switching has also been reported for several of these device structures, including nanopores containing oligo(phenylene ethynylene) monolayers, and planar junctions incorporating rotaxane and catenane monolayers for the construction and operation of complex molecular machines. A specific electrically driven surface mounted molecular rotor is described in detail in this review. The rotor is comprised of a monolayer of redox-active ligated copper compounds sandwiched between a gold electrode and a highly-doped P+ Si. This electrically driven sandwich-type monolayer molecular rotor device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and a retention time of greater than 104 s. The rotation speed of this type of molecular rotor has been reported to be in the picosecond timescale, which provides a potential of high switching speed applications. Current-voltage spectroscopy (I-V) revealed a temperature-dependent negative differential resistance (NDR) associated with the device. The analysis of the device I–V characteristics suggests the source of the observed switching effects to be the result of the redox-induced ligand rotation around the copper metal center and this attribution of switching is consistent with the observed temperature dependence of the switching behavior as well as the proposed energy diagram of the device. The observed resistance switching shows the potential for future non-volatile memories and logic devices applications. This review will discuss the progress and provide a perspective of molecular motion for nanoelectronics and other applications.

R-HPDC Process with Forced Convection Mixing Device for Automotive Part of A380 Aluminum Alloy

PubMed Central

Zhou, Bing; Kang, Yonglin; Qi, Mingfan; Zhang, Huanhuan; Zhu, Guoming

2014-01-01

The continuing quest for cost-effective and complex shaped aluminum castings with fewer defects for applications in the automotive industries has aroused the interest in rheological high pressure die casting (R-HPDC). A new machine, forced convection mixing (FCM) device, based on the mechanical stirring and convection mixing theory for the preparation of semisolid slurry in convenience and functionality was proposed to produce the automotive shock absorber part by R-HPDC process. The effect of barrel temperature and rotational speed of the device on the grain size and morphology of semi-solid slurry were extensively studied. In addition, flow behavior and temperature field of the melt in the FCM process was investigated combining computational fluid dynamics simulation. The results indicate that the microstructure and pore defects at different locations of R-HPDC casting have been greatly improved. The vigorous fluid convection in FCM process has changed the temperature field and composition distribution of conventional solidification. Appropriately increasing the rotational speed can lead to a uniform temperature filed sooner. The lower barrel temperature leads to a larger uniform degree of supercooling of the melt that benefits the promotion of nucleation rate. Both of them contribute to the decrease of the grain size and the roundness of grain morphology. PMID:28788608

Microscopic origin of read current noise in TaOx-based resistive switching memory by ultra-low temperature measurement

NASA Astrophysics Data System (ADS)

Pan, Yue; Cai, Yimao; Liu, Yefan; Fang, Yichen; Yu, Muxi; Tan, Shenghu; Huang, Ru

2016-04-01

TaOx-based resistive random access memory (RRAM) attracts considerable attention for the development of next generation nonvolatile memories. However, read current noise in RRAM is one of the critical concerns for storage application, and its microscopic origin is still under debate. In this work, the read current noise in TaOx-based RRAM was studied thoroughly. Based on a noise power spectral density analysis at room temperature and at ultra-low temperature of 25 K, discrete random telegraph noise (RTN) and continuous average current fluctuation (ACF) are identified and decoupled from the total read current noise in TaOx RRAM devices. A statistical comparison of noise amplitude further reveals that ACF depends strongly on the temperature, whereas RTN is independent of the temperature. Measurement results combined with conduction mechanism analysis show that RTN in TaOx RRAM devices arises from electron trapping/detrapping process in the hopping conduction, and ACF is originated from the thermal activation of conduction centers that form the percolation network. At last, a unified model in the framework of hopping conduction is proposed to explain the underlying mechanism of both RTN and ACF noise, which can provide meaningful guidelines for designing noise-immune RRAM devices.

One-step synthesis of multi-emission carbon nanodots for ratiometric temperature sensing

NASA Astrophysics Data System (ADS)

Nguyen, Vanthan; Yan, Lihe; Xu, Huanhuan; Yue, Mengmeng

2018-01-01

Measuring temperature with greater precision at localized small length scales or in a nonperturbative manner is a necessity in widespread applications, such as integrated photonic devices, micro/nano electronics, biology, and medical diagnostics. To this context, use of nanoscale fluorescent temperature probes is regarded as the most promising method for temperature sensing because they are noninvasive, accurate, and enable remote micro/nanoscale imaging. Here, we propose a novel ratiometric fluorescent sensor for nanothermometry using carbon nanodots (C-dots). The C-dots were synthesized by one-step method using femtosecond laser ablation and exhibit unique multi-emission property due to emissions from abundant functional groups on its surface. The as-prepared C-dots demonstrate excellent ratiometric temperature sensing under single wavelength excitation that achieves high temperature sensitivity with a 1.48% change per °C ratiometric response over wide-ranging temperature (5-85 °C) in aqueous buffer. The ratiometric sensor shows excellent reversibility and stability, holding great promise for the accurate measurement of temperature in many practical applications.

Phase-tunable temperature amplifier

NASA Astrophysics Data System (ADS)

Paolucci, F.; Marchegiani, G.; Strambini, E.; Giazotto, F.

2017-06-01

Coherent caloritronics, the thermal counterpart of coherent electronics, has drawn growing attention since the discovery of heat interference in 2012. Thermal interferometers, diodes, transistors and nano-valves have been theoretically proposed and experimentally demonstrated by exploiting the quantum phase difference between two superconductors coupled through a Josephson junction. So far, the quantum-phase modulator has been realized in the form of a superconducting quantum interference device (SQUID) or a superconducting quantum interference proximity transistor (SQUIPT). Thence, an external magnetic field is necessary in order to manipulate the heat transport. Here, we theoretically propose the first on-chip fully thermal caloritronic device: the phase-tunable temperature amplifier (PTA). Taking advantage of a recently discovered thermoelectric effect in spin-split superconductors coupled to a spin-polarized system, we generate the magnetic flux controlling the transport through a temperature-biased SQUIPT by applying a temperature gradient. We simulate the behavior of the device and define a number of figures of merit in full analogy with voltage amplifiers. Notably, our architecture ensures almost infinite input thermal impedance, maximum gain of about 11 and efficiency reaching the 95%. This concept paves the way for applications in radiation sensing, thermal logics and quantum information.

High Temperature Propulsion System Structural Seals for Future Space Launch Vehicles

NASA Technical Reports Server (NTRS)

Dunlap, Patrick H., Jr.; Steinetz, Bruce M.; DeMange, Jeffrey J.

2003-01-01

Durable, flexible sliding seals are required in advanced hypersonic engines to seal the perimeters of movable engine ramps for efficient, safe operation in high heat flux environments at temperatures of 2000 to 2500 F. Current seal designs do not meet the demanding requirements for future engines, so NASA's Glenn Research Center is developing advanced seals and preloading devices to overcome these shortfalls. An advanced ceramic wafer seal design and two types of seal preloading devices were evaluated in a series of compression, scrub, and flow tests. Silicon nitride wafer seals survived 2000 in. (1000 cycles) of scrubbing at room temperature against an Inconel 625 rub surface with no chips or signs of damage. Flow rates measured for the wafers before and after scrubbing were almost identical and were much lower than those recorded for the best braided rope seal flow blockers. Canted coil springs and silicon nitride compression springs showed promise conceptually as potential seal preloading devices to help maintain seal resiliency. A finite element model of the canted coil spring revealed that it should be possible to produce a spring out of high temperature materials for applications at 2000+ F.

Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer

PubMed Central

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wang, Zhenwei; Hedhili, M. N.; Wang, Q. X.; Alshareef, H. N.

2014-01-01

We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350°C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications. PMID:24728223

Thermoelectric energy conversion with solid electrolytes

NASA Astrophysics Data System (ADS)

Cole, T.

1983-09-01

The alkali metal thermoelectric converter (AMTEC) is a device for the direct conversion of heat to electrical energy. The sodium ion conductor beta-double prime-alumina is used to form a high-temperature regenerative concentration cell for elemental sodium. An AMTEC of mature design should have an efficiency of 20 to 40 percent, a power density of 0.5 kilowatt per kilogram or more, no moving parts, low maintenance requirements, high durability, and efficiency independent of size. It should be usable with high-temperature combustion, nuclear, or solar heat sources. Experiments have demonstrated the feasibility of the AMTEC and confirmed the theoretical analysis of the device. A wide range of applications from aerospace power to utility power plants appears possible.

Thermoelectric energy conversion with solid electrolytes.

PubMed

Cole, T

1983-09-02

The alkali metal thermoelectric converter (AMTEC) is a device for the direct conversion of heat to electrical energy. The sodium ion conductor beta"- alumina is used to form a high-temperature regenerative concentration cell for elemental sodium. An AMTEC of mature design should have an efficiency of 20 to 40 percent, a power density of 0.5 kilowatt per kilogram or more, no moving parts, low maintenance requirements, high durability, and efficiency independent of size. It should be usable with high-temperature combustion, nuclear, or solar heat sources. Experiments have demonstrated the feasibility of the AMTEC and confirmed the theoretical analysis of the device. A wide range of applications from aerospace power to utility power plants appears possible.

Extreme temperature stability of thermally insulating graphene-mesoporous-silicon nanocomposite

NASA Astrophysics Data System (ADS)

Kolhatkar, Gitanjali; Boucherif, Abderraouf; Rahim Boucherif, Abderrahim; Dupuy, Arthur; Fréchette, Luc G.; Arès, Richard; Ruediger, Andreas

2018-04-01

We demonstrate the thermal stability and thermal insulation of graphene-mesoporous-silicon nanocomposites (GPSNC). By comparing the morphology of GPSNC carbonized at 650 °C as-formed to that after annealing, we show that this nanocomposite remains stable at temperatures as high as 1050 °C due to the presence of a few monolayers of graphene coating on the pore walls. This does not only make this material compatible with most thermal processes but also suggests applications in harsh high temperature environments. The thermal conductivity of GPSNCs carbonized at temperatures in the 500 °C-800 °C range is determined through Raman spectroscopy measurements. They indicate that the thermal conductivity of the composite is lower than that of silicon, with a value of 13 ± 1 W mK-1 at room temperature, and not affected by the thin graphene layer, suggesting a role of the high concentration of carbon related-defects as indicated by the high intensity of the D-band compared to G-band of the Raman spectra. This morphological stability at high temperature combined with a high thermal insulation make GPSNC a promising candidate for a broad range of applications including microelectromechanical systems and thermal effect microsystems such as flow sensors or IR detectors. Finally, at 120 °C, the thermal conductivity remains equal to that at room temperature, attesting to the potential of using our nanocomposite in devices that operate at high temperatures such as microreactors for distributed chemical conversion, solid oxide fuel cells, thermoelectric devices or thermal micromotors.

Development of Pulse Tube Cryocoolers at SITP for Space Application

NASA Astrophysics Data System (ADS)

Zhang, Ankuo; Wu, Yinong; Liu, Shaoshuai; Yu, Huiqin; Yang, Baoyu

2018-05-01

Over the last 10 years, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, has developed very high-efficiency pulse tube cryocoolers (PTCs) for aerospace applications. These PTCs can provide cooling power from milliwatt scale to tens of watts over a range of temperatures from 30 to 170 K and can be used to cool a variety of detectors in space applications (such as quantum interference devices, radiometers and ocean color sensors) that must operate at a specific cryogenic temperature to increase the signal-to-noise ratio, sensitivity and optical resolution. This paper reviews the development of single-stage PTCs over a range of weights from 1.6 to 12 kg that offer cooling powers at the cold temperature range from 40 to 170 K. In addition, a two-stage 30 K-PTC is under development.

Influence of geometric and material properties on artifacts generated by interventional MRI devices: Relevance to PRF-shift thermometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tatebe, Ken, E-mail: Ken.Tatebe@gmail.com; Ramsay, Elizabeth; Kazem, Mohammad

2016-01-15

Purpose: Magnetic resonance imaging (MRI) is capable of providing valuable real-time feedback during medical procedures, partly due to the excellent soft-tissue contrast available. Several technical hurdles still exist to seamless integration of medical devices with MRI due to incompatibility of most conventional devices with this imaging modality. In this study, the effect of local perturbations in the magnetic field caused by the magnetization of medical devices was examined using finite element analysis modeling. As an example, the influence of the geometric and material characteristics of a transurethral high-intensity ultrasound applicator on temperature measurements using proton resonance frequency (PRF)-shift thermometry wasmore » investigated. Methods: The effect of local perturbations in the magnetic field, caused by the magnetization of medical device components, was examined using finite element analysis modeling. The thermometry artifact generated by a transurethral ultrasound applicator was simulated, and these results were validated against analytic models and scans of an applicator in a phantom. Several parameters were then varied to identify which most strongly impacted the level of simulated thermometry artifact, which varies as the applicator moves over the course of an ablative high-intensity ultrasound treatment. Results: Key design parameters identified as having a strong influence on the magnitude of thermometry artifact included the susceptibility of materials and their volume. The location of components was also important, particularly when positioned to maximize symmetry of the device. Finally, the location of component edges and the inclination of the device relative to the magnetic field were also found to be important factors. Conclusions: Previous design strategies to minimize thermometry artifact were validated, and novel design strategies were identified that substantially reduce PRF-shift thermometry artifacts for a variety of device orientations. These new strategies are being incorporated into the next generation of applicators. The general strategy described in this study can be applied to the design of other interventional devices intended for use with MRI.« less

Ultra-Low-Power Cryogenic SiGe Low-Noise Amplifiers: Theory and Demonstration

NASA Astrophysics Data System (ADS)

Montazeri, Shirin; Wong, Wei-Ting; Coskun, Ahmet H.; Bardin, Joseph C.

2016-01-01

Low-power cryogenic low-noise amplifiers (LNAs) are desired to ease the cooling requirements of ultra-sensitive cryogenically cooled instrumentation. In this paper, the tradeoff between power and noise performance in silicon-germanium LNAs is explored to study the possibility of operating these devices from low supply voltages. A new small-signal heterojunction bipolar transistor noise model applicable to both the forward-active and saturation regimes is developed from first principles. Experimental measurements of a device across a wide range of temperatures are then presented and the dependence of the noise parameters on collector-emitter voltage is described. This paper concludes with the demonstration of a high-gain 1.8-3.6-GHz cryogenic LNA achieving a noise temperature of 3.4-5 K while consuming just 290 μW when operating at 15-K physical temperature.

An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Okojie, Robert S.; Chen, Liangyu; Spry, D.; Trunek, A.

2007-01-01

A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

DOEpatents

Albin, David S.; Carapella, Jeffrey J.; Tuttle, John R.; Contreras, Miguel A.; Gabor, Andrew M.; Noufi, Rommel; Tennant, Andrew L.

1995-07-25

A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

Effect of Light Intensity and Temperature on the Current Voltage Characteristics of Al/ SY/ p- Si Organic-Inorganic Heterojunction

NASA Astrophysics Data System (ADS)

Imer, Arife Gencer; Ocak, Yusuf Selim

2016-10-01

An organic-inorganic contact was fabricated by forming a thin film of sunset yellow dye ( SY) on a p- Si wafer. The device showed a good rectification property, and the sunset yellow thin film modified the barrier height (Φb) of Al/ p- Si contact by influencing the space charge region. The heterojunction had a strong response to the different illumination intensities and showed that it can be suitable for photodiode applications. The I- V measurements of the device were also applied in the temperature range of 100-500 K. It was seen that characteristic parameters of the device were strongly dependent upon temperature. While the value of Φb increased, the ideality factor ( n) decreased with the increase in temperature. This variation was attributed to spatial inhomogeneity at the interface. The Norde function was used to determine the temperature-dependent series resistance and Φb values, and there was a good agreement with that of ln I- V data. The values of the Richardson constant ( A*) and mean Φb were determined as 29.47 Acm-2 K-2 by means of a modified activation energy plot, matching with a theoretical one, and 1.032 eV, respectively. Therefore, it was stated that the current voltage characteristic with the temperature can be explained by thermionic emission theory with Gaussian distribution of the Φb at the interface.

Determination and experimental verification of high-temperature SAW orientations on langatate.

PubMed

Davulis, Peter M; da Cunha, Mauricio Pereira

2012-02-01

Langatate (LGT) is a member of the langasite family of crystals appropriate for high-temperature frequency control and sensing applications. This paper identifies multiple LGT SAW orientations for use at high temperature, specifically in the 400°C to 900°C range. Orientations with low sensitivity to temperature are desired for frequency control devices and many sensors, conversely large temperature sensitivity is a benefit for temperature sensors. The LGT SAW temperature behavior has been calculated for orientations sweeping the Euler angles (0°, Θ, ψ), (90°, Θ, ψ), and (ψ, 90°, ψ), based on newly identified high-temperature elastic constants and temperature coefficients for this material. The temperature coefficient of delay (TCD) and total frequency change over the temperature range were analyzed from 400°C to 900°C. Multiple SAW orientations were identified with zero-TCD between 400°C and 500°C. Although no orientations that have turn-over temperatures above 500°C were identified, several have low frequency variation with temperature, of the order of -0.8% over the range 400°C to 800°C. Temperature-sensitive orientations with TCD up to 75 ppm/°C at 900°C were identified, with potential for high-temperature sensor applications. The reported predictions are shown to agree with measured behavior of LGT SAW delay lines fabricated along 6 orientations in the (90°, 23°, ψ) plane. In addition, this work demonstrates that concurrently operated LGT SAW devices fabricated on the same wafer provide means of temperature sensing. In particular, the measured frequency difference between delay lines oriented along (90°, 23°, 0°) and (90°, 23°, 48°) has fractional temperature sensitivity that ranges from -172 ppm/°C at 25°C to -205 ppm/°C at 900°C.

Thin-Film Ferroelectric Tunable Microwave Devices Being Developed

NASA Technical Reports Server (NTRS)

VanKeuls, Frederick W.

1999-01-01

Electronically tunable microwave components have become the subject of intense research efforts in recent years. Many new communications systems would greatly benefit from these components. For example, planned low Earth orbiting satellite networks have a need for electronically scanned antennas. Thin ferroelectric films are one of the major technologies competing to fill these applications. When a direct-current (dc) voltage is applied to ferroelectric film, the dielectric constant of the film can be decreased by nearly an order of magnitude, changing the high-frequency wavelength in the microwave device. Recent advances in film growth have demonstrated high-quality ferroelectric thin films. This technology may allow microwave devices that have very low power and are compact, lightweight, simple, robust, planar, voltage tunable, and affordable. The NASA Lewis Research Center has been designing, fabricating, and testing proof-of-concept tunable microwave devices. This work, which is being done in-house with funding from the Lewis Director's Discretionary Fund, is focusing on introducing better microwave designs to utilize these materials. We have demonstrated Ku- and K-band phase shifters, tunable local oscillators, tunable filters, and tunable diplexers. Many of our devices employ SrTiO3 as the ferroelectric. Although it is one of the more tunable and easily grown ferroelectrics, SrTiO3 must be used at cryogenic temperatures, usually below 100 K. At these temperatures, we frequently use high-temperature superconducting thin films of YBa2Cu3O7-8 to carry the microwave signals. However, much of our recent work has concentrated on inserting room-temperature ferroelectric thin films, such as BaxSr1- xTiO3 into these devices. The BaxSr1-xTiO3 films are used in conjuction with normal metal conductors, such as gold.

Composite prepreg application device

NASA Technical Reports Server (NTRS)

Sandusky, Donald A. (Inventor); Marchello, Joseph M. (Inventor)

1995-01-01

A heated shoe and cooled pressure roller assembly for composite prepreg application is provided. The shoe assembly includes a heated forward contact surface having a curved pressure surface. The following cooled roller provides a continuous pressure to the thermoplastic while reducing the temperature to approximately 5 C below glass transition temperature. Electric heating coils inside the forward portion of the shoe heat a thermoplastic workpiece to approximately 100 C above the glass transition. Immediately following the heated contact surface, a cooled roller cools the work. The end sharpened shape of the heated shoe trailing edge tends to prevent slag buildup and maintain a uniform, relaxed stress fabrication.

Development of Electronics for Low-Temperature Space Missions

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Dickman, John E.; Gerber, Scott S.; Overton, Eric

2001-01-01

Electronic systems that are capable of operating at cryogenic temperatures will be needed for many future NASA space missions, including deep space probes and spacecraft for planetary surface exploration. In addition to being able to survive the harsh deep space environment, low-temperature electronics would help improve circuit performance, increase system efficiency, and reduce payload development and launch costs. Terrestrial applications where components and systems must operate in low-temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation systems, and arctic exploration. An ongoing research and development project for the design, fabrication, and characterization of low-temperature electronics and supporting technologies at NASA Glenn Research Center focuses on efficient power systems capable of surviving in and exploiting the advantages of low-temperature environments. Supporting technologies include dielectric and insulating materials, semiconductor devices, passive power components, optoelectronic devices, and packaging and integration of the developed components into prototype flight hardware. An overview of the project is presented, including a description of the test facilities, a discussion of selected data from component testing, and a presentation of ongoing research activities being performed in collaboration with various organizations.

Developments in advanced and energy saving thermal isolations for cryogenic applications

NASA Astrophysics Data System (ADS)

Shu, Q. S.; Demko, J. A.; Fesmire, J. E.

2015-12-01

The cooling power consumption in large scale superconducting systems is huge and cryogenic devices used in space applications often require an extremely long cryogen holding time. To economically maintain the device at its operating temperature and minimize the refrigeration losses, high performance of thermal isolation is essential. The radiation from warm surrounding surfaces and conducting heat leaks through supports and penetrations are the dominant heat loads to the cold mass under vacuum condition. The advanced developments in various cryogenic applications to successfully reduce the heat loads through radiation and conduction are briefly and systematically discussed and evaluated in this review paper. These include: (1) thermal Insulation for different applications (foams, perlites, glass bubbles, aerogel and MLI), (2) sophisticated low-heat-leak support (cryogenic tension straps, trolley bars and posts with dedicated thermal intercepts), and (3) novel cryogenic heat switches.

Future superconductivity applications in space - A review

NASA Astrophysics Data System (ADS)

Krishen, Kumar; Ignatiev, Alex

High temperature superconductor (HISC) materials and devices can provide immediate applications for many space missions. The in-space thermal environment provides an opportunity to develop, test, and apply this technology to enhance performance and reliability for many applications of crucial importance to NASA. Specifically, the technology development areas include: (1) high current power transmission, (2) microwave components, devices, and antennas, (3) microwave, optical, and infrared sensors, (4) signal processors, (5) submillimeter wave components and systems, (6) ultra stable space clocks, (7) electromagnetic launch systems, and (8) accelerometers and position sensors for flight operations. HTSC is expected to impact NASA's Lunar Bases, Mars exploration, Mission to Earth, and Planetary exploration programs providing enabling and cost-effect technology. A review of the space applications of the HTSC technology is presented. Problem areas in technology development needing special attention are identified.

Reliable, Low-Cost, Low-Weight, Non-Hermetic Coating for MCM Applications

NASA Technical Reports Server (NTRS)

Jones, Eric W.; Licari, James J.

2000-01-01

Through an Air Force Research Laboratory sponsored STM program, reliable, low-cost, low-weight, non-hermetic coatings for multi-chip-module(MCK applications were developed. Using the combination of Sandia Laboratory ATC-01 test chips, AvanTeco's moisture sensor chips(MSC's), and silicon slices, we have shown that organic and organic/inorganic overcoatings are reliable and practical non-hermetic moisture and oxidation barriers. The use of the MSC and unpassivated ATC-01 test chips provided rapid test results and comparison of moisture barrier quality of the overcoatings. The organic coatings studied were Parylene and Cyclotene. The inorganic coatings were Al2O3 and SiO2. The choice of coating(s) is dependent on the environment that the device(s) will be exposed to. We have defined four(4) classes of environments: Class I(moderate temperature/moderate humidity). Class H(high temperature/moderate humidity). Class III(moderate temperature/high humidity). Class IV(high temperature/high humidity). By subjecting the components to adhesion, FTIR, temperature-humidity(TH), pressure cooker(PCT), and electrical tests, we have determined that it is possible to reduce failures 50-70% for organic/inorganic coated components compared to organic coated components. All materials and equipment used are readily available commercially or are standard in most semiconductor fabrication lines. It is estimated that production cost for the developed technology would range from $1-10/module, compared to $20-200 for hermetically sealed packages.

Multibias and thermal behavior of microwave GaN and GaAs based HEMTs

NASA Astrophysics Data System (ADS)

Alim, Mohammad A.; Rezazadeh, Ali A.; Gaquiere, Christophe

2016-12-01

Multibias and thermal characterizations on 0.25 μm × (2 × 100) μm AlGaN/GaN/SiC HEMT and 0.5 μm × (2 × 100) μm AlGaAs/InGaAs pseudomorphic HEMT have carried out for the first time. Two competitive device technologies are investigated with the variations of bias and temperature in order to afford a detailed realization of their potentialities. The main finding includes the self heating effect in the GaN device, zero temperature coefficient points at the drain current and transconductance in the GaAs device. The thermal resistance RTH of 7.1, 8.2 and 9.4 °C mm/W for the GaN device was estimated at 25, 75 and 150 °C respectively which are consistent with those found in the open literature. The temperature trend of the threshold voltage VT, Schottky barrier height ϕb, sheet charge densities of two dimensional electron gas ns, and capacitance under the gate Cg are exactly opposite in the two devices; whereas the knee voltage Vk, on resistance Ron, and series resistance Rseries are shows similar trend. The multi-bias and thermal behavior of the output current Ids, output conductance gds, transconductance gm, cut-off frequency ft, maximum frequency fmax, effective velocity of electron, veff and field dependent mobility, μ demonstrates a great potential of GaN device. These results provide some valuable insights for technology of preference for future and current applications.

Effects on the Distal Radioulnar Joint of Ablation of Triangular Fibrocartilage Complex Tears With Radiofrequency Energy.

PubMed

Huber, Michaela; Loibl, Markus; Eder, Christoph; Kujat, Richard; Nerlich, Michael; Gehmert, Sebastian

2016-11-01

This cadaver study investigated the temperature profile in the wrist joint and distal radioulnar joint (DRUJ) during radiofrequency energy (RFE) application for triangular fibrocartilage complex resection. An arthroscopic partial resection of the triangular fibrocartilage complex using monopolar and bipolar RFE was simulated in 14 cadaver limbs. The temperature was recorded simultaneously in the DRUJ and at 6 other anatomic locations of the wrist during RFE application. The mean temperature in the DRUJ was 43.3 ± 8.2°C for the bipolar system in the ablation mode (60 W) and 30.4 ± 3.4°C for the monopolar system in the cut mode (20 W) after 30 seconds. The highest measured temperature in the DRUJ was 54.3°C for the bipolar system and 68.1°C for the monopolar system. The application of RFE for debridement or resection of the triangular fibrocartilage complex in a clinical setting can induce peak temperatures that might cause damage to the cartilage of the DRUJ. Bipolar systems produce higher mean temperatures than monopolar devices. RFE application increases the mean temperature in the DRUJ after 30 seconds to a level that may jeopardize cartilage tissue. Copyright © 2016 American Society for Surgery of the Hand. Published by Elsevier Inc. All rights reserved.