Effect of Temperature on Electrical Conductivity of Guaiacol-Guanidine Hydrochloride-Formaldehyde Copolymer Resin

NASA Astrophysics Data System (ADS)

Kukade, S. D.; Bawankar, S. V.

2018-02-01

The purpose of the present paper is to report temperature dependence of electrical conductivity on Guaiacol-guanidine hydrochloride-formaldehyde copolymer resin. By using a microwave irradiation technique, various ratios of copolymer resin were synthesized from the reacting monomers, i.e., guaiacol, guanidine hydrochloride and formaldehyde. The characterization of the copolymer resins has been fulfilled by spectral methods viz. ultraviolet visible (UV visible), infrared and proton nuclear magnetic spectroscopy (1H-NMR). The solid state direct current electrical conductivity of synthesized copolymer resins has been measured as a function of temperature. The electrical conductivity values of all the copolymers have been found in the range of a semiconductor.

Nonlinear conductivity in silicon nitride

NASA Astrophysics Data System (ADS)

Tuncer, Enis

2017-08-01

To better comprehend electrical silicon-package interaction in high voltage applications requires full characterization of the electrical properties of dielectric materials employed in wafer and package level design. Not only the packaging but wafer level dielectrics, i.e. passivation layers, would experience high electric fields generated by the voltage applied pads. In addition the interface between the passivation layer and a mold compound might develop space charge because of the mismatch in electrical properties of the materials. In this contribution electrical properties of a thin silicon nitride (Si3N4) dielectric is reported as a function of temperature and electric field. The measured values later analyzed using different temperature dependent exponential expressions and found that the Mott variable range hopping conduction model was successful to express the data. A full temperature/electric field dependency of conductivity is generated. It was found that the conduction in Si3N4 could be expressed like a field ionization or Fowler-Nordheim mechanism.

Characterization of solar cells for space applications. Volume 6: Electrical characteristics of Spectrolab BSF, BSR, textured, 10 ohm-cm, 50 micron advanced OAST solar cells as a function of intensity, temperature, and irradiation

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Downing, R. G.; Miyahira, T. F.; Weiss, R. S.

1979-01-01

Electrical parametric data are presented on BSF, BSR, textured 10 ohm cm, 50 micron advanced OAST cells in graphical and tabular form as functions of solar illumination intensity, temperature, and 1 MeV electron fluence.

Low Temperature Noise and Electrical Characterization of the Company Heterojunction Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Gee, Russell C.; Fossum, Eric R.; Baier, Steven M.

1993-01-01

This paper discusses the electrical properties of the complementary heterojunction field-effect transistor (CHFET) at 4K, including the gate leakage current, the subthreshold transconductance, and the input-referred noise voltage.

Experimental characterization and numerical modeling of tissue electrical conductivity during pulsed electric fields for irreversible electroporation treatment planning.

PubMed

Neal, Robert E; Garcia, Paulo A; Robertson, John L; Davalos, Rafael V

2012-04-01

Irreversible electroporation is a new technique to kill cells in targeted tissue, such as tumors, through a nonthermal mechanism using electric pulses to irrecoverably disrupt the cell membrane. Treatment effects relate to the tissue electric field distribution, which can be predicted with numerical modeling for therapy planning. Pulse effects will change the cell and tissue properties through thermal and electroporation (EP)-based processes. This investigation characterizes these changes by measuring the electrical conductivity and temperature of ex vivo renal porcine tissue within a single pulse and for a 200 pulse protocol. These changes are incorporated into an equivalent circuit model for cells and tissue with a variable EP-based resistance, providing a potential method to estimate conductivity as a function of electric field and pulse length for other tissues. Finally, a numerical model using a human kidney volumetric mesh evaluated how treatment predictions vary when EP- and temperature-based electrical conductivity changes are incorporated. We conclude that significant changes in predicted outcomes will occur when the experimental results are applied to the numerical model, where the direction and degree of change varies with the electric field considered.

Characterization of terrestrial solar cells for space applications: Electrical characteristics of thin Westinghouse dendritic web cells as a function of solar intensity, temperature, and incidence angle

NASA Technical Reports Server (NTRS)

Stella, P. M.; Anspaugh, B. E.

1985-01-01

Electrical characteristics of thin (100- and 140-micron) Westinghouse dendritic-web N/P silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. Performance is also shown as a function of solar illlumination angle of incidence for AMO.

Schottky-type grain boundaries in CCTO ceramics

NASA Astrophysics Data System (ADS)

Felix, A. A.; Orlandi, M. O.; Varela, J. A.

2011-10-01

In this work we studied electrical barriers existing at CaCu 3Ti 4O 12 (CCTO) ceramics using dc electrical measurements. CCTO pellets were produced by solid state reaction method and X-ray diffractograms showed which single phase polycrystalline samples were obtained. The samples were electrically characterized by dc and ac measurements as a function of temperature, and semiconductor theory was applied to analyze the barrier at grain boundaries. The ac results showed the sample's permittivity is almost constant ( 104) as function of temperature at low frequencies and it changes from 100 to 104 as the temperature increases at high frequencies. Using dc measurements as a function of temperature, the behavior of barriers was studied in detail. Comparison between Schottky and Poole-Frenkel models was performed, and results prove that CCTO barriers are more influenced by temperature than by electric field (Schottky barriers). Besides, the behavior of barrier width as function of temperature was also studied and experimental results confirm the theoretical assumptions.

Effects of Combined Stressing on the Electrical Properties of Film and Ceramic Capacitors

NASA Technical Reports Server (NTRS)

Overton, Eric; Hammoud, Ahmad N.; Baumann, Eric D.; Myers, Ira T.

1994-01-01

Advanced power systems which generate, control, and distribute electrical power to many large loads are a requirement for future space exploration missions. The development of high temperature insulating materials and power components constitute a key element in systems which are lightweight, efficient, and are capable of surviving the hostile space environment. In previous work, experiments were carried out to evaluate film and ceramic capacitors for potential use in high temperature applications. The effects of thermal stressing, in air and without electrical bias, on the electrical properties of the capacitors as a function of thermal aging up to 12 weeks were determined. In this work, the combined effects of thermal aging and electrical stresses on the properties of teflon film and ceramic power capacitors were examined. The ceramic capacitors were thermally aged for 35 weeks and the teflon capacitors for 15 weeks at 200 C under full electrical bias and were characterized, on a weekly basis, in terms of their capacitance stability and electrical loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also obtained. The results obtained represent the influence that short-term thermal aging and electrical bias have on the electrical properties of the power capacitors characterized.

Wetting and motion behaviors of water droplet on graphene under thermal-electric coupling field

NASA Astrophysics Data System (ADS)

Zhang, Zhong-Qiang; Dong, Xin; Ye, Hong-Fei; Cheng, Guang-Gui; Ding, Jian-Ning; Ling, Zhi-Yong

2015-02-01

Wetting dynamics and motion behaviors of a water droplet on graphene are characterized under the electric-thermal coupling field using classical molecular dynamics simulation method. The water droplet on graphene can be driven by the temperature gradient, while the moving direction is dependent on the electric field intensity. Concretely, the water droplet on graphene moves from the low temperature region to the high temperature region for the relatively weak electric field intensity. The motion acceleration increases with the electric field intensity on graphene, whereas the moving direction switches when the electric field intensity increases up to a threshold. The essence is the change from hydrophilic to hydrophobic for the water droplet on graphene at a threshold of the electric field intensity. Moreover, the driven force of the water droplet caused by the overall oscillation of graphene has important influence on the motion behaviors. The results are helpful to control the wettability of graphene and further develop the graphene-based fluidic nanodevices.

Electric Field Dependence of Quantum Efficiencies of Ag/n-Si Composites in the Infrared at Room Temperature

DTIC Science & Technology

2009-09-10

Howard University 2300 6th Street NW, Room 1016 Washington, D.C. 20059 Air Force Office of Scientific Research 875 North Randolph Street Room 3112...Department of Electrical Engineering, Howard University , Washington, DC 20059 Room temperature quantum efficiencies of Ag/n-Si composite...at the Howard University CREST Center for Nanomaterials Characterization Science and Processing Technology were used in this investigation. The

Growth of pure ZnO thin films prepared by chemical spray pyrolysis on silicon

NASA Astrophysics Data System (ADS)

Ayouchi, R.; Martin, F.; Leinen, D.; Ramos-Barrado, J. R.

2003-01-01

Structural, morphological, optical and electrical properties of ZnO thin films prepared by chemical spray pyrolysis from zinc acetate (Zn(CH 3COO) 2 2H 2O) aqueous solutions, on polished Si(1 0 0), and fused silica substrates for optical characterization, have been studied in terms of deposition time and substrate temperature. The growth of the films present three regimes depending on the substrate temperature, with increasing, constant and decreasing growth rates at lower, middle, and higher-temperature ranges, respectively. Growth rate higher than 15 nm min -1 can be achieved at Ts=543 K. ZnO film morphological and electrical properties have been related to these growth regimes. The films have been characterized by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.

High electric field conduction in low-alkali boroaluminosilicate glass

NASA Astrophysics Data System (ADS)

Dash, Priyanka; Yuan, Mengxue; Gao, Jun; Furman, Eugene; Lanagan, Michael T.

2018-02-01

Electrical conduction in silica-based glasses under a low electric field is dominated by high mobility ions such as sodium, and there is a transition from ionic transport to electronic transport as the electric field exceeds 108 V/m at low temperatures. Electrical conduction under a high electric field was investigated in thin low-alkali boroaluminosilicate glass samples, showing nonlinear conduction with the current density scaling approximately with E1/2, where E is the electric field. In addition, thermally stimulated depolarization current (TSDC) characterization was carried out on room-temperature electrically poled glass samples, and an anomalous discharging current flowing in the same direction as the charging current was observed. High electric field conduction and TSDC results led to the conclusion that Poole-Frenkel based electronic transport occurs in the mobile-cation-depleted region adjacent to the anode, and accounts for the observed anomalous current.

Drying temperature effects on electrical and optical properties of poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin film

NASA Astrophysics Data System (ADS)

Azhar, N. E. A.; Affendi, I. H. H.; Shafura, A. K.; Shariffudin, S. S.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2016-07-01

Temperature effects on electrical and optical properties of a representative semiconducting polymer, poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), has recently attracted much attention. The MEH-PPV thin films were deposited at different drying temperature (anneal temperature) using spin-coating technique. The spin coating technique was used to produce uniform film onto large area. The MEH-PPV was dissolved in toluene solution to exhibits different optical and electrical properties. The absorption coefficient and bandgap was measured using UV-Visible-NIR (UV-VIS-NIR). The bandgap of MEH-PPV was effect by the thickness of thin films. For electrical properties, two-point probe was used to characterize the current-voltage measurement. The current-voltage measurement shows that the MEH-PPV thin films become more conductive at high temperature. This study will provide better performance and suitable for optoelectronic device especially OLEDs applications.

Drying temperature effects on electrical and optical properties of poly[2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azhar, N. E. A., E-mail: najwaezira@yahoo.com; Affendi, I. H. H., E-mail: irmahidayanti.halim@gmail.com; Shafura, A. K., E-mail: shafura@ymail.com

Temperature effects on electrical and optical properties of a representative semiconducting polymer, poly[2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), has recently attracted much attention. The MEH-PPV thin films were deposited at different drying temperature (anneal temperature) using spin-coating technique. The spin coating technique was used to produce uniform film onto large area. The MEH-PPV was dissolved in toluene solution to exhibits different optical and electrical properties. The absorption coefficient and bandgap was measured using UV-Visible-NIR (UV-VIS-NIR). The bandgap of MEH-PPV was effect by the thickness of thin films. For electrical properties, two-point probe was used to characterize the current-voltage measurement. The current-voltage measurement showsmore » that the MEH-PPV thin films become more conductive at high temperature. This study will provide better performance and suitable for optoelectronic device especially OLEDs applications.« less

Influence of Chromium Doping on Electrical and Magnetic Behavior of Nd0.5Sr0.5MnO3 System

NASA Astrophysics Data System (ADS)

Lalitha, G.; Pavan Kumar, N.; Venugopal Reddy, P.

2018-04-01

With a view to understand the influence of chromium doping at the Mn site on the electrical and magnetic behavior of the Nd0.5Sr0.5MnO3 manganite system, a series of samples were prepared by the citrate sol-gel route method. The samples were characterized structurally by XRD. A systematic investigation of electrical resistivity over a temperature range 5-300 K was carried out mainly to understand the magneto-transport behavior in these materials. Studies on the variation of magnetization with temperature over a temperature range 80-330 K were undertaken. Investigation of magnetization at different magnetic fields at two different temperatures, viz. 80 and 300 K, was also carried out. The results show that chromium doping gave typical electrical and magnetic properties. It has been concluded that the coexistence of charge ordered and ferromagnetic phases induced by chromium doping plays an important role in the low-temperature behavior of the system.

Structural characterization and electrical conductivity of the Ca{sub 0.01}La{sub 0.99−x}Sm{sub x}NbO{sub 4−δ} solid series

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Yong; Duan, Nanqi; Yan, Dong, E-mail: yand@hust.edu.cn

Ca{sub 0.01}La{sub 0.99−x}Sm{sub x}NbO{sub 4−δ} (x=0, 0.1, 0.2, 0.4, 0.6, 0.8, 0.99) is prepared by using a solid reaction route, and single phase is achieved. Structural and phase transformation of Ca{sub 0.01}La{sub 0.99−x}Sm{sub x}NbO{sub 4−δ} have been characterized by high temperature X-ray diffraction. The lattice parameters a, b, c decrease and γ increases with increasing x, at both room and high temperature. The phase transformation temperature increases linearly with increasing x for Ca{sub 0.01}La{sub 0.99−x}Sm{sub x}NbO{sub 4−δ}. The electrical conductivity of Ca{sub 0.01}La{sub 0.99−x}Sm{sub x}NbO{sub 4−δ} is measured in wet air. A clear relationship between the structural, phase transformation andmore » electrical conductivity of Ca{sub 0.01}La{sub 0.99−x}Sm{sub x}NbO{sub 4−δ} is built, which will provide a guideline to tailor the electrical conductivity. - Graphical abstract: Structural and phase transformation of Ca{sub 0.01}La{sub 0.99−x}Sm{sub x}NbO{sub 4−δ} have been characterized by high temperature X-ray diffraction, as well as the conductivity of Ca{sub 0.01}La{sub 0.99−x}Sm{sub x}NbO{sub 4−δ} in wet air. A clear relationship between the structural, phase transformation and electrical conductivity of Ca{sub 0.01}La{sub 0.99−x}Sm{sub x}NbO{sub 4−δ} is built. - Highlights: • Ca{sub 0.01}La{sub 0.99−x}Sm{sub x}NbO{sub 4−δ} with various Sm contents was prepared. • Structure, phase transformation and electrical conductivity of Ca{sub 0.01}La{sub 0.99−x}Sm{sub x}NbO{sub 4−δ} were characterized. • A relationship between the structure, phase transformation and electrical conductivity was well established.« less

Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

NASA Astrophysics Data System (ADS)

Yusuf, Mohammed; Du, Xu; Dawber, Matthew

2013-03-01

Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

Fabrication of Heterojunction Diode Based on n-ZnO Nanowires/p-Si Substrate: Temperature Dependent Transport Characteristics.

PubMed

Badran, R I; Umar, Ahmad

2017-01-01

Herein, we report the growth and characterizations of well-crystalline n-ZnO nanowires assembled in micro flower-shaped morphologies. The nanowires are grown on p-Silicon substrate and characterized in terms of their structural, morphological and electrical properties. Temperature dependent transport characteristics of the fabricated n-ZnO/p-Si heterojunction diode were examined. The morphological studies revealed that the nanowires are grown in high-density and arrange in special micro flower shaped morphology. The structural characterizations confirmed that the nanowires are well-crystalline and possessing wurtzite hexagonal phase. The electrical properties were evaluated by examining the I–V characteristics of the fabricated n-ZnO/p-Si heterojunction diode. The I–V characteristics were studied at temperature <300 K and ≥300 K in the forward and reverse bias conditions. The detailed temperature dependent electrical properties revealed that the fabricated heterojunction assembly shows a diode-like behavior with a turn-on voltage of 5 V at almost all temperatures and the delivered current changes between ˜1 to ˜5 μA when temperature changes from 77 K to 425 K. The rectifying behavior of the fabricated heterojunction diode, at 5 V, was demonstrated by rectifying ratio of ˜4 at 77 K which decreases to ˜1.5 at 425 K. This analysis also showed that the mean potential barrier of the fabricated heterojunction (˜1.2 eV) is larger than the energy difference (0.72 eV) of the work functions between Si and ZnO.

Superconductivity in sputtered CuMO6S8

NASA Technical Reports Server (NTRS)

Alterovitz, S.; Woollam, J. A.; Kammerdiner, L.; Luo, H. L.; Martin, C.

1977-01-01

Samples were prepared by melting the metals, followed by annealing to various temperatures. The result was a structurally weak material. Sputtered films on sapphire substrates were prepared and studied. The substrates give the films mechanical strength and permit easy attachment of electrical leads. Materials were characterized by X-ray diffraction, electron microscopy, electrical resistance vs. temperature, and critical current measurements. Some of the results on CuMo6S8 are presented.

Characterization of solar cells for space applications. Volume 14: Electrical characteristics of Hughes liquid phase epitaxy gallium arsenide solar cells as a function of intensity, temperature and irradiation

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Downing, R. G.; Miyahira, T. F.; Weiss, R. S.

1981-01-01

Electrical characteristics of liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. The solar cells were exposed to 1 MeV electron fluences of, respectively, 0, one hundred trillion, one quadrillion, and ten quadrillion e/sq cm.

Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which itsmore » resistivity is 5.36 × 10{sup 4} Ωcm{sup −1}. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Characterization Report on Fuels for NEAMS Model Validation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gofryk, Krzysztof

Nearly 20% of the world’s electricity today is generated by nuclear energy from uranium dioxide (UO 2) fuel. The thermal conductivity of UO 2 governs the conversion of heat produced from fission events into electricity and it is an important parameter in reactor design and safety. While nuclear fuel operates at high to very high temperatures, thermal conductivity and other materials properties lack sensitivity to temperature variations and to material variations at reactor temperatures. As a result, both the uncertainties in laboratory measurements at high temperatures and the small differences in properties of different materials inevitably lead to large uncertaintiesmore » in models and little predictive power. Conversely, properties measured at low to moderate temperatures have more sensitivity, less uncertainty, and have larger differences in properties for different materials. These variations need to be characterized as they will afford the highest predictive capability in modeling and offer best assurances for validation and verification at all temperatures. This is well emphasized in the temperature variation of the thermal conductivity of UO 2.« less

Prediction of energy balance and utilization for solar electric cars

NASA Astrophysics Data System (ADS)

Cheng, K.; Guo, L. M.; Wang, Y. K.; Zafar, M. T.

2017-11-01

Solar irradiation and ambient temperature are characterized by region, season and time-domain, which directly affects the performance of solar energy based car system. In this paper, the model of solar electric cars used was based in Xi’an. Firstly, the meteorological data are modelled to simulate the change of solar irradiation and ambient temperature, and then the temperature change of solar cell is calculated using the thermal equilibrium relation. The above work is based on the driving resistance and solar cell power generation model, which is simulated under the varying radiation conditions in a day. The daily power generation and solar electric car cruise mileage can be predicted by calculating solar cell efficiency and power. The above theoretical approach and research results can be used in the future for solar electric car program design and optimization for the future developments.

Characterization of aluminum selenide bi-layer thin film

NASA Astrophysics Data System (ADS)

Boolchandani, Sarita; Soni, Gyanesh; Srivastava, Subodh; Vijay, Y. K.

2018-05-01

The Aluminum Selenide (AlSe) bi-layer thin films were grown on glass substrate using thermal evaporation method under high vacuum condition. The morphological characterization was done using SEM. Electrical measurement with temperature variation shows that thin films exhibit the semiconductor nature. The optical properties of prepared thin films have also been characterized by UV-VIS spectroscopy measurements. The band gap of composite thin films has been calculated by Tauc's relation at different temperature ranging 35°C-100°C.

Daily Air Temperature and Electricity Load in Spain.

NASA Astrophysics Data System (ADS)

Valor, Enric; Meneu, Vicente; Caselles, Vicente

2001-08-01

Weather has a significant impact on different sectors of the economy. One of the most sensitive is the electricity market, because power demand is linked to several weather variables, mainly the air temperature. This work analyzes the relationship between electricity load and daily air temperature in Spain, using a population-weighted temperature index. The electricity demand shows a significant trend due to socioeconomic factors, in addition to daily and monthly seasonal effects that have been taken into account to isolate the weather influence on electricity load. The results indicate that the relationship is nonlinear, showing a `comfort interval' of ±3°C around 18°C and two saturation points beyond which the electricity load no longer increases. The analysis has also revealed that the sensitivity of electricity load to daily air temperature has increased along time, in a higher degree for summer than for winter, although the sensitivity in the cold season is always more significant than in the warm season. Two different temperature-derived variables that allow a better characterization of the observed relationship have been used: the heating and cooling degree-days. The regression of electricity data on them defines the heating and cooling demand functions, which show correlation coefficients of 0.79 and 0.87, and predicts electricity load with standard errors of estimate of ±4% and ±2%, respectively. The maximum elasticity of electricity demand is observed at 7 cooling degree-days and 9 heating degree-days, and the saturation points are reached at 11 cooling degree-days and 13 heating degree-days, respectively. These results are helpful in modeling electricity load behavior for predictive purposes.

The relief of microtherm inhibition for p-fluoronitrobenzene mineralization using electrical stimulation at low temperatures.

PubMed

Zhang, Xueqin; Feng, Huajun; Liang, Yuxiang; Zhao, Zhiqing; Long, Yuyang; Fang, Yuan; Wang, Meizhen; Yin, Jun; Shen, Dongsheng

2015-05-01

Low temperature aggravates biological treatment of refractory p-fluoronitrobenzene (p-FNB) because of microtherm inhibition of microbial activity. Considering the potential characterization of energy supply for microbial metabolism and spurring microbial activity by electrical stimulation, a bioelectrochemical system (BES) was established to provide sustaining electrical stimulation for p-FNB mineralization at a low temperature. Electrical stimulation facilitated p-FNB treatment and bioelectrochemical reaction rate constants for the removal and defluorination of p-FNB at 10 °C were 0.0931 and 0.0054 h(-1), which were higher than the sums of the rates found using a biological system and an electrocatalytic system by 62.8 and 64.8%, respectively. At a low temperature, microbial activity in terms of dehydrogenase and ATPase was found to be higher with electrical stimulation, being 121.1 and 100.1% more active than that in the biological system. Moreover, stronger antioxidant ability was observed in the BES, which implied a better cold-resistance and relief of microtherm inhibition by electrical stimulation. Bacterial diversity analysis revealed a significant evolution of microbial community by electrical stimulation, and Clostridia was uniquely enriched. One bacterial sequence close to Pseudomonas became uniquely predominant, which appeared to be crucial for excellent p-FNB treatment performance in the BES at a low temperature. Economic evaluation revealed that the energy required to mineralize an extra mole of p-FNB was found to be 247 times higher by heating the system than by application of electrical stimulation. These results indicated that application of electrical stimulation is extremely promising for treating refractory waste at low temperatures.

Synthesis and characterization of γ-Fe2O3 NPs on silicon substrate for power device application

NASA Astrophysics Data System (ADS)

Hussein Nurul Athirah, Abu; Bee Chin, Ang; Yew Hoong, Wong; Boon Hoong, Ong; Aainaa Aqilah, Baharuddin

2018-06-01

Maghemite nanoparticles (γ-Fe2O3 NPs) were synthesized using Massart procedure. The formation reaction were optimized by varying the concentration of ferric nitrate solution (Fe(NO3)3) (0.1, 0.3, 0.5, 0.7 and 1.0 M). All samples were characterized by means of x-ray Diffractometer (XRD), Raman Spectroscopy, Transmission Electron Microscope (TEM) and Alternating Gradient Magnetometer (AGM). The smallest size of the NPs were chosen to be deposited on Silicon (100) substrate by spin coating technique. Annealing process of the samples were performed in Argon ambient at different temperatures (600, 700, 800 and 900°) for 20 min. Metal-oxide-semiconductor capacitors were then fabricated by depositing Aluminium as the gate electrode. The effect of the annealing process on the structural and electrical properties of γ-Fe2O3 NPs thin film were investigated. The structural properties of the deposited thin film were evaluated by XRD analysis, Atomic Force Microscopy (AFM) and Raman Analysis. On the other hand, the electrical properties was conducted by current-voltage analysis. It was revealed that the difference in the annealing temperature affect the grain size, surface roughness, distribution of the nanoparticles as well as the electrical performance of the samples where low annealing temperature (600 °C) gives low leakage current while high annealing temperature (900 °C) gives high electrical breakdown.

Characterization of piezocrystals for practical configurations with temperature- and pressure-dependent electrical impedance spectroscopy.

PubMed

Qiu, Zhen; Sadiq, Muhammad R; Démoré, Christine; Parker, Michelle F; Marin, Pablo; Mayne, Keith; Cochran, Sandy

2011-09-01

Piezoelectric single crystal materials such as (x)Pb(Mg(1/3)Nb(2/3))O(3-)(1-x)PbTiO(3) (PMN-PT) have, by some measures, significantly better performance than established piezoelectric ceramics for ultrasound applications. However, they are also subject to phase transitions affecting their behavior at temperatures and pressures encountered in underwater sonar and actuator applications and in non-destructive testing at elevated temperatures. Materials with modified compositions to reduce these problems are now under development, but application-oriented characterization techniques need further attention. Characterization with temperature variation has been reported extensively, but the range of parameters measured is often limited and the effects of pressure variation have received almost no attention. Furthermore, variation in properties between samples is now rarely reported. The focus of this paper is an experimental system set up with commercially available equipment and software to carry out characterization of piezoelectric single crystals with variation in temperature, pressure, and electrical bias fields found in typical practical use. We illustrate its use with data from bulk thickness-mode PMN-29%PT samples, demonstrating variation among nominally identical samples and showing not only the commonly reported changes in permittivity with temperature for bulk material but also significant and complicated changes with pressure and bias field and additional ultrasonic modes which are attributed to material phase changes. The insight this provides may allow the transducer engineer to accelerate new material adoption in devices.

Cryogenic characterization of LEDs for space application

NASA Astrophysics Data System (ADS)

Carron, Jérôme; Philippon, Anne; How, Lip Sun; Delbergue, Audrey; Hassanzadeh, Sahar; Cillierre, David; Danto, Pascale; Boutillier, Mathieu

2017-09-01

In the frame of EUCLID project, the Calibration Unit of the VIS (VISible Imager) instrument must provide an accurate and well characterized light source for in-flight instrument calibration without noise when it is switched off. The Calibration Unit consists of a set of LEDs emitting at various wavelengths in the visible towards an integrating sphere. The sphere's output provides a uniform illumination over the entire focal plane. Nine references of LEDs from different manufacturers were selected, screened and qualified under cryogenic conditions. Testing this large quantity of samples led to the implementation of automated testing equipment with complete in-situ monitoring of optoelectronic parameters as well as temperature and vacuum values. All the electrical and optical parameters of the LED have been monitored and recorded at ambient and cryogenic temperatures. These results have been compiled in order to show the total deviation of the LED electrical and electro-optical properties in the whole mission and to select the best suitable LED references for the mission. This qualification has demonstrated the robustness of COTS LEDs to operate at low cryogenic temperatures and in the space environment. Then 6 wavelengths were selected and submitted to an EMC sensitivity test at room and cold temperature by counting the number of photons when LEDs drivers are OFF. Characterizations were conducted in the full frequency spectrum in order to implement solutions at system level to suppress the emission of photons when the LED drivers are OFF. LEDs impedance was also characterized at room temperature and cold temperature.

Synthesis and characterization of electrical conducting porous carbon structures based on resorcinol-formaldehyde

NASA Astrophysics Data System (ADS)

Najeh, I.; Ben Mansour, N.; Mbarki, M.; Houas, A.; Nogier, J. Ph.; El Mir, L.

2009-10-01

Electrical conducting carbon (ECC) porous structures were explored by changing the pyrolysis temperature of organic xerogel compounds prepared by sol-gel method from resorcinol-formaldehyde (RF) mixtures in acetone using picric acid as catalyst. The effect of this preparation parameter on the structural and electrical properties of the obtained ECCs was studied. The analysis of the obtained results revealed that the polymeric insulating xerogel phase was transformed progressively with pyrolysis temperature into carbon conducting phase; this means the formation of long continuous conducting path for charge carriers to move inside the structure with thermal treatment and the samples exhibited tangible percolation behaviour where the percolation threshold can be determined by pyrolysis temperature. The temperature-dependent conductivity of the obtained ECC structures shows a semi-conducting behaviour and the I( V) characteristics present a negative differential resistance. The results obtained from STM micrographs revealed that the obtained ECC structures consist of porous electrical conducting carbon materials.

Understanding the multiferroicity in TmMn2O5 by a magnetically induced ferrielectric model

PubMed Central

Yang, L.; Li, X.; Liu, M. F.; Li, P. L.; Yan, Z. B.; Zeng, M.; Qin, M. H.; Gao, X. S.; Liu, J.-M.

2016-01-01

The magnetically induced electric polarization behaviors in multiferroic TmMn2O5 in response to varying temperature and magnetic field are carefully investigated by means of a series of characterizations including the high precision pyroelectric current technique. Here polycrystalline rather than single crystal samples are used for avoiding the strong electrically self-polarized effect in single crystals, and various parallel experiments on excluding the thermally excited current contributions are performed. The temperature-dependent electric polarization flop as a major character is identified for different measuring paths. The magneto-current measurements indicate that the electric polarization in the low temperature magnetic phase region has different origin from that in the high temperature magnetic phase. It is suggested that the electric polarization does have multiple components which align along different orientations, including the Mn3+-Mn4+-Mn3+ exchange striction induced polarization PMM, the Tm3+-Mn4+-Tm3+ exchange striction induced polarization PTM, and the low temperature polarization PLT probably associated with the Tm3+ commensurate phase. The observed electric polarization flop can be reasonably explained by the ferrielectric model proposed earlier for DyMn2O5, where PMM and PTM are the two antiparallel components both along the b-axis and PLT may align along the a-axis. Finally, several issues on the unusual temperature dependence of ferroelectric polarizations are discussed. PMID:27713482

Electrical characterization and vibrational spectroscopic investigations of order-disorder phase transitions in [N(C3H7)4]2CoCl4 compound

NASA Astrophysics Data System (ADS)

Moutia, N.; Ben Gzaiel, M.; Oueslati, A.; Khirouni, K.

2017-04-01

The present paper accounts for the vibrational spectroscopy and electrical characterization of a bis-tetrapropylammonium tetrachlorocobaltate grown at room temperature by slow evaporation of aqueous solution. The Raman spectra were studied in the range of 50-3500 cm-1 as a function of temperature of 318 K-421 K. The most important changes are observed for the band at 1032 cm-1 associated to δ(C - C - C) + t(CH2) + ω(CH2) . A detail analysis of the frequency and half-width is quantitatively described in term of an order-disorder model allowed to obtain information relative to the thermal coefficient and activation energy. The decrease of the activation energy with increasing temperature has been interpreted in term of a change in the re-orientation motion of the cationic parts [N(C3H7)4]+. Besides, the impedance measurements indicate that the electrical properties are strongly temperature dependent. Nyquist plots (-Z″versus Z‧) show that the conductivity behavior is accurately represented by an equivalent circuit models which consists of a series combination of grains interior and grains boundary. The conductivity follows the Arrhenius relation with different activation energies and conduction mechanisms: three temperature regions with activation energies EaI = 0.78 eV and EaII = 0.81 eV and EaIII = 0.93 eV. Furthermore, the modulus plots can be characterized by full width at half height or in term of a non-experiential decay function ϕ(t) = exp(-1/τ) β .

Property and microstructural nonuniformity in the yttrium-barium-copper-oxide superconductor determined from electrical, magnetic, and ultrasonic measurements. Ph.D. Thesis - Case Western Reserve Univ.

NASA Technical Reports Server (NTRS)

Roth, Don J.

1991-01-01

The purpose of this dissertation was the following: (1) to characterize the effect of pore fraction on a comprehensive set of electrical and magnetic properties for the yttrium-barium-copper-oxide (YBCO) high temperature ceramic superconductor; and (2) to determine the viability of using a room-temperature, nondestructive characterization method to aid in the prediction of superconducting (cryogenic) properties. The latter involved correlating ultrasonic velocity measurements at room temperature with property-affecting pore fraction and oxygen content variations. The use of ultrasonic velocity for estimating pore fraction in YBCO is presented, and other polycrystalline materials are reviewed, modeled, and statistically analyzed. This provides the basis for using ultrasonic velocity to interrogate microstructure. The effect of pore fraction (0.10-0.25) on superconductor properties of YBCO samples was characterized. Spatial (within-sample) variations in microstructure and superconductor properties were investigated, and the effect of oxygen content on elastic behavior was examined. Experimental methods used included a.c. susceptibility, electrical, and ultrasonic velocity measurements. Superconductor properties measured included transition temperature, magnetic transition width, transport and magnetic critical current density, magnetic shielding, a.c. loss, and sharpness of the voltage-current characteristics. An ultrasonic velocity image constructed from measurements at 1mm increments across a YBCO sample revealed microstructural variations that correlated with variations in magnetic shielding and a.c. loss behavior. Destructive examination using quantitative image analysis revealed pore fraction to be the varying microstructural feature.

Fabrication and characterization on reduced graphene oxide field effect transistor (RGOFET) based biosensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rashid, A. Diyana; Ruslinda, A. Rahim, E-mail: ruslinda@unimap.edu.my; Fatin, M. F.

2016-07-06

The fabrication and characterization on reduced graphene oxide field effect transistor (RGO-FET) were demonstrated using a spray deposition method for biological sensing device purpose. A spray method is a fast, low-cost and simple technique to deposit graphene and the most promising technology due to ideal coating on variety of substrates and high production speed. The fabrication method was demonstrated for developing a label free aptamer reduced graphene oxide field effect transistor biosensor. Reduced graphene oxide (RGO) was obtained by heating on hot plate fixed at various temperatures of 100, 200 and 300°C, respectively. The surface morphology of RGO were examinedmore » via atomic force microscopy to observed the temperature effect of produced RGO. The electrical measurement verify the performance of electrical conducting RGO-FET at temperature 300°C is better as compared to other temperature due to the removal of oxygen groups in GO. Thus, reduced graphene oxide was a promising material for biosensor application.« less

Control and materials characterization System for 6T Superconducting Cryogen Free Magnet Facility at IUAC, New Delhi

NASA Astrophysics Data System (ADS)

Dutt, R. N.; Meena, D. K.; Kar, S.; Soni, V.; Nadaf, A.; Das, A.; Singh, F.; Datta, T. S.

2017-02-01

A system for carrying out automatic experimental measurements of various electrical transport characteristics and their relation to magnetic fields for samples mounted on the sample holder on a Variable Temperature Insert (VTI) of the Cryogen Free Superconducting Magnet System (CFMS) has been developed. The control and characterization system is capable of monitoring, online plotting and history logging in real-time of cryogenic temperatures with the Silicon (Si) Diode and Zirconium Oxy-Nitride sensors installed inside the magnet facility. Electrical transport property measurements have been automated with implementation of current reversal resistance measurements and automatic temperature set-point ramping with the parameters of interest available in real-time as well as for later analysis. The Graphical User Interface (GUI) based system is user friendly to facilitate operations. An ingenious electronics for reading Zirconium Oxy-Nitride temperature sensors has been used. Price to performance ratio has been optimized by using in house developed measurement techniques mixed with specialized commercial cryogenic measurement / control equipment.

Probing fast heating in magnetic tunnel junction structures with exchange bias

NASA Astrophysics Data System (ADS)

Papusoi, C.; Sousa, R.; Herault, J.; Prejbeanu, I. L.; Dieny, B.

2008-10-01

Heat diffusion in a magnetic tunnel junction (MTJ) having a ferromagnetic/antiferromagnetic free layer is investigated. The MTJ is heated by an electric current pulse of power PHP, flowing through the junction in current perpendicular to the plane (CPP) geometry, via Joule heat dissipation in the tunnel barrier. According to a proposed one-dimensional (1D) model of heat diffusion, when an electric voltage is applied to the MTJ, the free layer experiences a transient temperature regime, characterized by an exponential increase of its temperature TAF with a time constant τTR, followed by a steady temperature regime characterized by TAF=TRT+αPHP, where TRT is the room temperature and α is a constant. Magnetic transport measurements of exchange bias HEX acting on the free layer allow the determination of α and τTR. The experimental values of α and τTR are in agreement with those calculated using the 1D model and an estimation of the MTJ thermodynamic parameters based on the Dulong-Petit and Widemann-Franz laws.

Vibration-induced electrical noise in a cryogen-free dilution refrigerator: Characterization, mitigation, and impact on qubit coherence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalra, Rachpon; Laucht, Arne; Dehollain, Juan Pablo

Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to the electrical signal observed on cables installed in a cryogen-free dilution refrigerator. The dominant electrical noise is in the 5–10 kHz range and its magnitude is found to be strongly temperature dependent. We test the performance of different cables designed to diagnosemore » and tackle the noise, and find triboelectrics to be the dominant mechanism coupling the vibrations to the electrical signal. Flattening a semi-rigid cable or jacketing a flexible cable in order to restrict movement within the cable, successfully reduces the noise level by over an order of magnitude. Furthermore, we characterize the effect of the pulse tube vibrations on an electron spin qubit device in this setup. Coherence measurements are used to map out the spectrum of the noise experienced by the qubit, revealing spectral components matching the spectral signature of the pulse tube.« less

Vibration-induced electrical noise in a cryogen-free dilution refrigerator: Characterization, mitigation, and impact on qubit coherence

NASA Astrophysics Data System (ADS)

Kalra, Rachpon; Laucht, Arne; Dehollain, Juan Pablo; Bar, Daniel; Freer, Solomon; Simmons, Stephanie; Muhonen, Juha T.; Morello, Andrea

2016-07-01

Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to the electrical signal observed on cables installed in a cryogen-free dilution refrigerator. The dominant electrical noise is in the 5-10 kHz range and its magnitude is found to be strongly temperature dependent. We test the performance of different cables designed to diagnose and tackle the noise, and find triboelectrics to be the dominant mechanism coupling the vibrations to the electrical signal. Flattening a semi-rigid cable or jacketing a flexible cable in order to restrict movement within the cable, successfully reduces the noise level by over an order of magnitude. Furthermore, we characterize the effect of the pulse tube vibrations on an electron spin qubit device in this setup. Coherence measurements are used to map out the spectrum of the noise experienced by the qubit, revealing spectral components matching the spectral signature of the pulse tube.

Vibration-induced electrical noise in a cryogen-free dilution refrigerator: Characterization, mitigation, and impact on qubit coherence.

PubMed

Kalra, Rachpon; Laucht, Arne; Dehollain, Juan Pablo; Bar, Daniel; Freer, Solomon; Simmons, Stephanie; Muhonen, Juha T; Morello, Andrea

2016-07-01

Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to the electrical signal observed on cables installed in a cryogen-free dilution refrigerator. The dominant electrical noise is in the 5-10 kHz range and its magnitude is found to be strongly temperature dependent. We test the performance of different cables designed to diagnose and tackle the noise, and find triboelectrics to be the dominant mechanism coupling the vibrations to the electrical signal. Flattening a semi-rigid cable or jacketing a flexible cable in order to restrict movement within the cable, successfully reduces the noise level by over an order of magnitude. Furthermore, we characterize the effect of the pulse tube vibrations on an electron spin qubit device in this setup. Coherence measurements are used to map out the spectrum of the noise experienced by the qubit, revealing spectral components matching the spectral signature of the pulse tube.

Characterization of Titanium films for low temperature detectors

NASA Astrophysics Data System (ADS)

Monticone, E.; Rajteri, M.; Rastello, M. L.; Lacquaniti, V.; Gandini, C.; Pasca, E.; Ventura, G.

2002-02-01

In this work we study Ti films, with thickness between 10 nm and 1000 nm, deposited by e-gun on silicon nitride. Critical temperatures and electrical resistivities of these films have been measured and related each other. The behavior of critical temperatures versus the residual resistivities is discussed in the frame of the Testardi and Mattheiss theory .

Thermophysical Properties of Five Industrial Steels in the Solid and Liquid Phase

NASA Astrophysics Data System (ADS)

Wilthan, B.; Schützenhöfer, W.; Pottlacher, G.

2017-07-01

The need for characterization of thermophysical properties of steel was addressed in the FFG-Bridge Project 810999 in cooperation with our partner from industry, Böhler Edelstahl GmbH & Co KG. To optimize numerical simulations of production processes such as plastic deformation or remelting, additional and more accurate thermophysical property data were necessary for the group of steels under investigation. With the fast ohmic pulse heating circuit system and a commercial high-temperature Differential Scanning Calorimeter at Graz University of Technology, we were able to measure the temperature-dependent specific electrical resistivity and specific enthalpy for a set of five high alloyed steels: E105, M314, M315, P800, and V320 from room temperature up into the liquid phase. The mechanical properties of those steels make sample preparation an additional challenge. The described experimental approach typically uses electrically conducting wire-shaped specimen with a melting point high enough for the implemented pyrometric temperature measurement. The samples investigated here are too brittle to be drawn as wires and could only be cut into rectangular specimen by Electrical Discharge Machining. Even for those samples all electrical signals and the temperature signal can be recorded with proper alignment of the pyrometer. For each material under investigation, a set of data including chemical composition, solidus and liquidus temperature, enthalpy, electrical resistivity, and thermal diffusivity as a function of temperature will be reported.

Convective Heat Transfer Coefficients of Automatic Transmission Fluid Jets with Implications for Electric Machine Thermal Management: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bennion, Kevin; Moreno, Gilberto

2015-09-29

Thermal management for electric machines (motors/ generators) is important as the automotive industry continues to transition to more electrically dominant vehicle propulsion systems. Cooling of the electric machine(s) in some electric vehicle traction drive applications is accomplished by impinging automatic transmission fluid (ATF) jets onto the machine's copper windings. In this study, we provide the results of experiments characterizing the thermal performance of ATF jets on surfaces representative of windings, using Ford's Mercon LV ATF. Experiments were carried out at various ATF temperatures and jet velocities to quantify the influence of these parameters on heat transfer coefficients. Fluid temperatures weremore » varied from 50 degrees C to 90 degrees C to encompass potential operating temperatures within an automotive transaxle environment. The jet nozzle velocities were varied from 0.5 to 10 m/s. The experimental ATF heat transfer coefficient results provided in this report are a useful resource for understanding factors that influence the performance of ATF-based cooling systems for electric machines.« less

Fabrication and characterization of Ga-doped ZnO / Si heterojunction nanodiodes

NASA Astrophysics Data System (ADS)

Akgul, Guvenc; Akgul, Funda Aksoy

2017-02-01

In this study, temperature-dependent electrical properties of n-type Ga-doped ZnO thin film / p-type Si nanowire heterojunction diodes were reported. Metal-assisted chemical etching (MACE) process was performed to fabricate Si nanowires. Ga-doped ZnO films were then deposited onto nanowires through chemical bath deposition (CBD) technique to build three-dimensional nanowire-based heterojunction diodes. Fabricated devices revealed significant diode characteristics in the temperature range of 220 - 360 K. Electrical measurements shown that diodes had a well-defined rectifying behavior with a good rectification ratio of 103 ±3 V at room temperature. Ideality factor (n) were changed from 2.2 to 1.2 with increasing temperature.

Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

NASA Astrophysics Data System (ADS)

Ahmad, S.; Ibrahim, A.; Alias, R.; Shapee, S. M.; Ambak, Z.; Zakaria, S. Z.; Yahya, M. R.; Mat, A. F. A.

2010-03-01

This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1 mm thickness were sintered at 1100° C, 1300° C and 1500° C for about 20 hours using heating and cooling rates of 2° C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.

Frequency and temperature dependence of dielectric and ac electrical properties of NiFe2O4-ZnO multiferroic nanocomposite

NASA Astrophysics Data System (ADS)

Dutta, Papia; Mandal, S. K.; Dey, P.; Nath, A.

2018-04-01

We have presented the ac electrical properties and dielectric studies of 0.5 NiFe2O4 - 0.5 ZnO multiferroic nanocomposites prepared through low temperature "pyrophoric reaction process". Structural characterization has been carried out through X-ray diffraction technique, which shows the co-existence of both the phases of the nanocomposites. The ac electrical properties of nanocomposites have been studied employing impedance spectroscopy technique. The impedance value is found to increase with increase in magnetic field attributing the magnetostriction property of the composites. Dielectric constant is found to decrease with both the increase in magnetic fields and temperatures. Studies of dielectric constant reveal the Maxwell Wagner interfacial polarization at low frequency regime. Relaxation frequency as a function of magnetic fields and temperatures is found to shift towards the high frequency region.

Characterizing Uncertainty In Electrical Resistivity Tomography Images Due To Subzero Temperature Variability

NASA Astrophysics Data System (ADS)

Herring, T.; Cey, E. E.; Pidlisecky, A.

2017-12-01

Time-lapse electrical resistivity tomography (ERT) is used to image changes in subsurface electrical conductivity (EC), e.g. due to a saline contaminant plume. Temperature variation also produces an EC response, which interferes with the signal of interest. Temperature compensation requires the temperature distribution and the relationship between EC and temperature, but this relationship at subzero temperatures is not well defined. The goal of this study is to examine how uncertainty in the subzero EC/temperature relationship manifests in temperature corrected ERT images, especially with respect to relevant plume parameters (location, contaminant mass, etc.). First, a lab experiment was performed to determine the EC of fine-grained glass beads over a range of temperatures (-20° to 20° C) and saturations. The measured EC/temperature relationship was then used to add temperature effects to a hypothetical EC model of a conductive plume. Forward simulations yielded synthetic field data to which temperature corrections were applied. Varying the temperature/EC relationship used in the temperature correction and comparing the temperature corrected ERT results to the synthetic model enabled a quantitative analysis of the error of plume parameters associated with temperature variability. Modeling possible scenarios in this way helps to establish the feasibility of different time-lapse ERT applications by quantifying the uncertainty associated with parameter(s) of interest.

Growth and characterization of sol-gel derived CuGaO2 semiconductor thin films for UV photodetector application

NASA Astrophysics Data System (ADS)

Tsay, Chien-Yie; Chen, Ching-Lien

2017-06-01

In this study, a p-type wide-bandgap oxide semiconductor CuGaO2 thin film was grown on quartz substrate by sol-gel method. The authors report the influence of annealing temperature on the phase transformation, structural features, and electrical properties of sol-gel derived Cu-Ga-O thin films. At relatively low annealing temperatures (≤900 °C), the films are a mixture of CuGa2O4, CuGaO2, and CuO phases. At relatively high annealing temperatures (≥925 °C), the majority phase in the films is delafossite CuGaO2. All as-prepared Cu-Ga-O thin films exhibited p-type conductivity, as confirmed by Hall measurements. The mean electrical resistivity of the Cu-Ga-O films decreased from 3.54×104 Ω-cm to 1.35×102 Ω-cm and then increased slightly to 3.51×102 Ω-cm when the annealing temperature was increased from 850 °C to 950 °C. We found that annealing the Cu-based oxide thin films at 925 °C produced nearly phase-pure CuGaO2 thin films with good densification. Such thin films exhibited the best electrical properties: a mean electrical resistivity of 1.35×102 Ω-cm, and a mean hole concentration of 1.60×1016 cm-3. In addition, we also fabricated and characterized MSM-type CuGaO2 UV photodetectors on quartz substrates.

Characterization of ZnAl cast alloys with Na addition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gancarz, Tomasz, E-mail: t.gancarz@imim.pl; Cempura, Grzegorz; Skuza, Wojciech

2016-01-15

This study was aimed at evaluating the microstructural change and thermal, electrical and mechanical properties with the addition of Na to eutectic ZnAl alloys. Solders based on eutectic ZnAl containing 0.2 to 3.0 (wt.%) of Na were developed for high temperature solder. Differential scanning calorimetry (DSC) measurements were performed to determine the melting temperatures of the alloys. Thermal linear expansion and electrical resistivity measurements were performed over − 50 °C to 300 °C and 30 °C to 300 °C temperature ranges, respectively. The microstructure of the specimens was analyzed using scanning (SEM) and transmission electron microscopy (TEM) techniques. Chemical microanalysismore » was performed by energy-dispersive X-ray spectroscopy (EDS) on SEM and TEM. The precipitates of NaZn{sub 13} were confirmed by X-ray diffraction (XRD) measurements and selected area electron diffraction (SAED) techniques. The addition of Na to eutectic ZnAl alloy increased the electrical resistivity and reduced the coefficient of thermal expansion; however, the melting point did not change. The mechanical properties, strain and microhardness increased with Na content in alloys. - Highlights: • High temperature soldering materials of ZnAl with Na were designed and characterized. • Precipitates of NaZn{sub 13}were observed and confirmed using TEM and XRD. • Addition of Na to eutectic ZnAl cussed increased mechanical properties. • NaZn{sub 13} caused increased electrical resistivity and microhardness, and reduced the CTE.« less

Dynamic Performance of Maximum Power Point Trackers in TEG Systems Under Rapidly Changing Temperature Conditions

NASA Astrophysics Data System (ADS)

Man, E. A.; Sera, D.; Mathe, L.; Schaltz, E.; Rosendahl, L.

2016-03-01

Characterization of thermoelectric generators (TEG) is widely discussed and equipment has been built that can perform such analysis. One method is often used to perform such characterization: constant temperature with variable thermal power input. Maximum power point tracking (MPPT) methods for TEG systems are mostly tested under steady-state conditions for different constant input temperatures. However, for most TEG applications, the input temperature gradient changes, exposing the MPPT to variable tracking conditions. An example is the exhaust pipe on hybrid vehicles, for which, because of the intermittent operation of the internal combustion engine, the TEG and its MPPT controller are exposed to a cyclic temperature profile. Furthermore, there are no guidelines on how fast the MPPT must be under such dynamic conditions. In the work discussed in this paper, temperature gradients for TEG integrated in several applications were evaluated; the results showed temperature variation up to 5°C/s for TEG systems. Electrical characterization of a calcium-manganese oxide TEG was performed at steady-state for different input temperatures and a maximum temperature of 401°C. By using electrical data from characterization of the oxide module, a solar array simulator was emulated to perform as a TEG. A trapezoidal temperature profile with different gradients was used on the TEG simulator to evaluate the dynamic MPPT efficiency. It is known that the perturb and observe (P&O) algorithm may have difficulty accurately tracking under rapidly changing conditions. To solve this problem, a compromise must be found between the magnitude of the increment and the sampling frequency of the control algorithm. The standard P&O performance was evaluated experimentally by using different temperature gradients for different MPPT sampling frequencies, and efficiency values are provided for all cases. The results showed that a tracking speed of 2.5 Hz can be successfully implemented on a TEG system to provide ˜95% MPPT efficiency when the input temperature is changing at 5°C/s.

Electric field poling induced self-biased converse magnetoelectric response in PMN-PT/NiFe2O4 nanocomposites

NASA Astrophysics Data System (ADS)

Ahlawat, Anju; Satapathy, S.; Deshmukh, Pratik; Shirolkar, M. M.; Sinha, A. K.; Karnal, A. K.

2017-12-01

In this letter, studies on structural transitions and the effect of electric field poling on magnetoelectric (ME) properties in 0.65Pb (Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT)/NiFe2O4 (NFO) nanocomposites are reported. The composite illustrates dramatic changes in the NFO crystal structure across ferroelectric transition temperature [Curie temperature (Tc) ˜ 450 K] of PMN-PT, while pure NFO does not exhibit any structural change in the temperature range (300 K-650 K). Synchrotron based X-ray diffraction analysis revealed the splitting of NFO peaks across the Tc of PMN-PT in the PMN-PT/NFO composite. Consequently, the anomalies are observed in temperature dependent magnetization of the NFO phase at the Tc of PMN-PT, establishing ME coupling in the PMN-PT/NFO composite. Furthermore, the composite exhibits drastic modification in ME coupling under electrically poled and unpoled conditions. A large self-biased ME effect characterized by non-zero ME response at zero Hbias was observed in electrically poled composites, which was not observed in unpoled PMN-PT/NFO. These results propose an alternative mechanism for intrinsic converse ME effects. The maximum magnetoelectric output was doubled after electrical poling. The observed self-biased converse magnetoelectric effect at room temperature provides potential applications in electrically controlled memory devices and magnetic flux control devices.

Pulsed Laser Deposition of High Temperature Protonic Films

NASA Technical Reports Server (NTRS)

Dynys, Fred W.; Berger, M. H.; Sayir, Ali

2006-01-01

Pulsed laser deposition has been used to fabricate nanostructured BaCe(0.85)Y(0.15)O3- sigma) films. Protonic conduction of fabricated BaCe(0.85)Y(0.15)O(3-sigma) films was compared to sintered BaCe(0.85)Y(0.15)O(3-sigma). Sintered samples and laser targets were prepared by sintering BaCe(0.85)Y(0.15)O(3-sigma) powders derived by solid state synthesis. Films 1 to 8 micron thick were deposited by KrF excimer laser on porous Al2O3 substrates. Thin films were fabricated at deposition temperatures of 700 to 950 C at O2 pressures up to 200 mTorr using laser pulse energies of 0.45 - 0.95 J. Fabricated films were characterized by X-ray diffraction, electron microscopy and electrical impedance spectroscopy. Single phase BaCe(0.85)Y(0.15)O(3-sigma) films with a columnar growth morphology are observed with preferred crystal growth along the [100] or [001] direction. Results indicate [100] growth dependence upon laser pulse energy. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C to 900 C. Electrical conduction behavior was dependent upon film deposition temperature. Maximum conductivity occurs at deposition temperature of 900 oC; the electrical conductivity exceeds the sintered specimen. All other deposited films exhibit a lower electrical conductivity than the sintered specimen. Activation energy for electrical conduction showed dependence upon deposition temperature, it varied

Electrical Characterization of Temperature Dependent Resistive Switching in Pr0.7C0.3MnO3

NASA Astrophysics Data System (ADS)

Lopez, Melinda; Salvo, Christopher; Tsui, Stephen

2012-02-01

Resistive switching offers a non-volatile and reversible means to possibly create a more physically compact yet larger access capacity in memory technology. While there has been a great deal of research conducted on this electrical property in oxide materials, there is still more to be learned about this at both high voltage pulsing and cryogenic temperatures. In this work, the electrical properties of a PCMO-metal interface switch were examined after application of voltage pulsing varying from 100 V to 1000 V and at temperatures starting at 293 K and lowered to 80 K. What was discovered was that below temperatures of 150 K, the resistive switching began to decrease across all voltage pulsing and that at all temperatures before this cessation, the change in resistive switching increased with higher voltage pulsing. We suggest that a variable density of charge traps at the interface is a likely mechanism, and work continues to extract more details.

Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

NASA Astrophysics Data System (ADS)

Brezeanu, G.; Pristavu, G.; Draghici, F.; Badila, M.; Pascu, R.

2017-08-01

In this paper, a characterization technique for 4H-SiC Schottky diodes with varying levels of metal-semiconductor contact inhomogeneity is proposed. A macro-model, suitable for high-temperature evaluation of SiC Schottky contacts, with discrete barrier height non-uniformity, is introduced in order to determine the temperature interval and bias domain where electrical behavior of the devices can be described by the thermionic emission theory (has a quasi-ideal performance). A minimal set of parameters, the effective barrier height and peff, the non-uniformity factor, is associated. Model-extracted parameters are discussed in comparison with literature-reported results based on existing inhomogeneity approaches, in terms of complexity and physical relevance. Special consideration was given to models based on a Gaussian distribution of barrier heights on the contact surface. The proposed methodology is validated by electrical characterization of nickel silicide Schottky contacts on silicon carbide (4H-SiC), where a discrete barrier distribution can be considered. The same method is applied to inhomogeneous Pt/4H-SiC contacts. The forward characteristics measured at different temperatures are accurately reproduced using this inhomogeneous barrier model. A quasi-ideal behavior is identified for intervals spanning 200 °C for all measured Schottky samples, with Ni and Pt contact metals. A predictable exponential current-voltage variation over at least 2 orders of magnitude is also proven, with a stable barrier height and effective area for temperatures up to 400 °C. This application-oriented characterization technique is confirmed by using model parameters to fit a SiC-Schottky high temperature sensor's response.

29 CFR 1926.407 - Hazardous (classified) locations.

Code of Federal Regulations, 2012 CFR

2012-07-01

... Electrical Code, lists or defines hazardous gases, vapors, and dusts by “Groups” characterized by their... the class, group, and operating temperature or temperature range, based on operation in a 40-degree C... be marked to indicate the group. (C) Fixed general-purpose equipment in Class I locations, other than...

29 CFR 1926.407 - Hazardous (classified) locations.

Code of Federal Regulations, 2013 CFR

2013-07-01

... Electrical Code, lists or defines hazardous gases, vapors, and dusts by “Groups” characterized by their... the class, group, and operating temperature or temperature range, based on operation in a 40-degree C... be marked to indicate the group. (C) Fixed general-purpose equipment in Class I locations, other than...

Vapor-phase polymerization of poly(3,4-ethylenedioxythiophene) (PEDOT) on commercial carbon coated aluminum foil as enhanced electrodes for supercapacitors

NASA Astrophysics Data System (ADS)

Tong, Linyue; Skorenko, Kenneth H.; Faucett, Austin C.; Boyer, Steven M.; Liu, Jian; Mativetsky, Jeffrey M.; Bernier, William E.; Jones, Wayne E.

2015-11-01

Laminar composite electrodes are prepared for application in supercapacitors using a catalyzed vapor-phase polymerization (VPP) of 3,4-ethylenedioxythiophene (EDOT) on the surface of commercial carbon coated aluminum foil. These highly electrically conducting polymer films provide for rapid and stable power storage per gram at room temperature. The chemical composition, surface morphology and electrical properties are characterized by Raman spectroscopy, scanning electron microscopy (SEM), and conducting atomic force microscopy (C-AFM). A series of electrical measurements including cyclic voltammetry (CV), charge-discharge (CD) and electrochemical impedance spectroscopy are also used to evaluate electrical performance. The processing temperature of VPP shows a significant effect on PEDOT morphology, the degree of orientation and its electrical properties. The relatively high temperature leads to high specific area and large conductive domains of PEDOT layer which benefits the capacitive behavior greatly according to the data presented. Since the substrate is already highly conductive, the PEDOT based composite can be used as electrode materials directly without adding current collector. By this simple and efficient process, PEDOT based composites exhibit specific capacitance up to 134 F g-1 with the polymerization temperature of 110 °C.

New experimental methodology, setup and LabView program for accurate absolute thermoelectric power and electrical resistivity measurements between 25 and 1600 K: application to pure copper, platinum, tungsten, and nickel at very high temperatures.

PubMed

Abadlia, L; Gasser, F; Khalouk, K; Mayoufi, M; Gasser, J G

2014-09-01

In this paper we describe an experimental setup designed to measure simultaneously and very accurately the resistivity and the absolute thermoelectric power, also called absolute thermopower or absolute Seebeck coefficient, of solid and liquid conductors/semiconductors over a wide range of temperatures (room temperature to 1600 K in present work). A careful analysis of the existing experimental data allowed us to extend the absolute thermoelectric power scale of platinum to the range 0-1800 K with two new polynomial expressions. The experimental device is controlled by a LabView program. A detailed description of the accurate dynamic measurement methodology is given in this paper. We measure the absolute thermoelectric power and the electrical resistivity and deduce with a good accuracy the thermal conductivity using the relations between the three electronic transport coefficients, going beyond the classical Wiedemann-Franz law. We use this experimental setup and methodology to give new very accurate results for pure copper, platinum, and nickel especially at very high temperatures. But resistivity and absolute thermopower measurement can be more than an objective in itself. Resistivity characterizes the bulk of a material while absolute thermoelectric power characterizes the material at the point where the electrical contact is established with a couple of metallic elements (forming a thermocouple). In a forthcoming paper we will show that the measurement of resistivity and absolute thermoelectric power characterizes advantageously the (change of) phase, probably as well as DSC (if not better), since the change of phases can be easily followed during several hours/days at constant temperature.

New experimental methodology, setup and LabView program for accurate absolute thermoelectric power and electrical resistivity measurements between 25 and 1600 K: Application to pure copper, platinum, tungsten, and nickel at very high temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abadlia, L.; Mayoufi, M.; Gasser, F.

2014-09-15

In this paper we describe an experimental setup designed to measure simultaneously and very accurately the resistivity and the absolute thermoelectric power, also called absolute thermopower or absolute Seebeck coefficient, of solid and liquid conductors/semiconductors over a wide range of temperatures (room temperature to 1600 K in present work). A careful analysis of the existing experimental data allowed us to extend the absolute thermoelectric power scale of platinum to the range 0-1800 K with two new polynomial expressions. The experimental device is controlled by a LabView program. A detailed description of the accurate dynamic measurement methodology is given in thismore » paper. We measure the absolute thermoelectric power and the electrical resistivity and deduce with a good accuracy the thermal conductivity using the relations between the three electronic transport coefficients, going beyond the classical Wiedemann-Franz law. We use this experimental setup and methodology to give new very accurate results for pure copper, platinum, and nickel especially at very high temperatures. But resistivity and absolute thermopower measurement can be more than an objective in itself. Resistivity characterizes the bulk of a material while absolute thermoelectric power characterizes the material at the point where the electrical contact is established with a couple of metallic elements (forming a thermocouple). In a forthcoming paper we will show that the measurement of resistivity and absolute thermoelectric power characterizes advantageously the (change of) phase, probably as well as DSC (if not better), since the change of phases can be easily followed during several hours/days at constant temperature.« less

Report on Contract W911NF-05-1-0339 (Clarkson University)

DTIC Science & Technology

2012-11-30

voltammetry and impedance spectroscopy: voltage dependent parameters of a silicon solar cell under controlled illumination and temperature, Energy...voltammetry for quantitative evaluation of temperature and voltage dependent parameters of a silicon solar cell , Solar Energy, (11 2011): 0. doi: 10.1016...characterization of silicon solar cells in the electro-analytical approach: Combined measurements of temperature and voltage dependent electrical

High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films

NASA Astrophysics Data System (ADS)

Adnane, L.; Dirisaglik, F.; Cywar, A.; Cil, K.; Zhu, Y.; Lam, C.; Anwar, A. F. M.; Gokirmak, A.; Silva, H.

2017-09-01

High-temperature characterization of the thermoelectric properties of chalcogenide Ge2Sb2Te5 (GST) is critical for phase change memory devices, which utilize self-heating to quickly switch between amorphous and crystalline states and experience significant thermoelectric effects. In this work, the electrical resistivity and Seebeck coefficient are measured simultaneously as a function of temperature, from room temperature to 600 °C, on 50 nm and 200 nm GST thin films deposited on silicon dioxide. Multiple heating and cooling cycles with increasingly maximum temperature allow temperature-dependent characterization of the material at each crystalline state; this is in contrast to continuous measurements which return the combined effects of the temperature dependence and changes in the material. The results show p-type conduction (S > 0), linear S(T), and a positive Thomson coefficient (dS/dT) up to melting temperature. The results also reveal an interesting linearity between dS/dT and the conduction activation energy for mixed amorphous-fcc GST, which can be used to estimate one parameter from the other. A percolation model, together with effective medium theory, is adopted to correlate the conductivity of the material with average grain sizes obtained from XRD measurements. XRD diffraction measurements show plane-dependent thermal expansion for the cubic and hexagonal phases.

Evaluation of electrical conductivity and equations of state of non-ideal plasma through microsecond timescale underwater electrical wire explosion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheftman, D.; Krasik, Ya. E.

2011-09-15

Experimental and simulation results of underwater electrical Cu, Al, and W wire explosions in the microsecond timescale are presented. It was shown that the electrical conductivity results for Cu and Al agree well with modified Lee-More and quantum molecular dynamic models for temperatures above 10 kK. The equation of state (EOS) values based on SESAME tables for Cu and Al were slightly modified for intermediate temperatures in order to obtain fitting between experimental and simulated exploding wire radial expansion. Also, it was shown that the electrical conductivity results and the EOS evaluation differ significantly from the results obtained in nanosecondmore » timescale experiments. Finally, it was found that underwater electrical W wire explosion is characterized by the appearance of non-uniformities along the z-axis of the wire. This phenomena adds uncertainty to the possibility of applying this type of experiments for evaluation of the electrical conductivity and EOS of W.« less

Evolution of Mechanical and Electrical Properties During Annealing of the Copper Wire Drawn

NASA Astrophysics Data System (ADS)

Zidani, M.; Messaoudi, S.; Baudin, T.; Derfouf, C.; Boulagroun, A.; Mathon, M. H.

2011-12-01

In this work, the evolution of mechanical and electrical properties and microstructure of industrial copper wire used for electrical cabling was characterized. This work is not limited to the interpretation of the microstructural characteristics of the wire-drawn state but also after different annealing treatments. For the lowest temperatures (160 °C and 200 °C), significant changes are not observed in the microstructure (grain size) in the weak deformed wire (28.5%). Instead, variations of some properties of the metal were observed (hardness and electrical resistivity). For strong deformation (61.4% and 84.59%), annealing, leads to recrystallization with a softening material. Let us note that the resistivity increases with deformation level and becomes higher after annealing at low temperature (200 °C).

Materials characterization study of conductive flexible second surface mirrors

NASA Technical Reports Server (NTRS)

Levadou, F.; Bosma, S. J.; Paillous, A.

1981-01-01

The status of prequalification and qualification work on conductive flexible second surface mirrors is described. The basic material is FEP Teflon witn either aluminium or silver vacuum deposited reflectors. The top layer has been made conductive by deposition of layer of a indium oxide. The results of a prequalification program comprised of decontamination, humidity, thermal cycling, thermal shock and vibration tests are presented. Thermo-optical and electrical properties. The results of a prequalification program comprised of decontamination, humidity, thermal cycling, thermal shock and vibration tests are presented. Thermo-optical and electrical properties, the electrostatic behavior of the materials under simulated substorm environment and electrical conductivity at low temperatures are characterized. The effects of simulated ultra violet and particles irradiation on electrical and thermo-optical properties of the materials are also presented.

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

NASA Technical Reports Server (NTRS)

Prince, J. L.; Lathrop, J. W.

1979-01-01

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, open circuit voltage, and output power, voltage, and current at the maximum power point. Incorporated in the report are the distributions of the prestress electrical data for all cell types. Data were also obtained on cell series and shunt resistance.

Voltage- and temperature- controlled LC:PDMS waveguide channels

NASA Astrophysics Data System (ADS)

Rutkowska, Katarzyna A.; Asquini, Rita; d'Alessandro, Antonio

2017-08-01

In this paper, we present our studies on electrical and thermal tuning of light propagation in waveguide channels, made for the scope from a polydimethylsiloxane (PDMS) substrate infiltrated with nematic liquid crystal (LC). We demonstrated, via numerical simulations, the changes of the waveguide optical parameters when solicited by temperature changes or electric fields. Moreover, the paper goes through the fabrication process of a waveguide channel sample and its characterization, as well as some preliminary experimental trials of sputtering indium tin oxide (ITO) and chromium layers on PDMS substrate to obtain flat electrodes.

Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation.

PubMed

Kumar, Ashish; Arafin, Shamsul; Amann, Markus Christian; Singh, Rajendra

2013-11-15

Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes prepared by ultra high vacuum evaporation has been done. Analysis has been made to determine the origin of the anomalous temperature dependence of the Schottky barrier height, the ideality factor, and the Richardson constant calculated from the I-V-T characteristics. Variable-temperature Hall effect measurements have been carried out to understand charge transport at low temperature. The modified activation energy plot from the barrier inhomogeneity model has given the value of 32.2 A/(cm2 K2) for the Richardson constant A** in the temperature range 200 to 380 K which is close to the known value of 26.4A/(cm2 K2) for n-type GaN.

Large magnetoelectric coupling in magnetically short-range ordered Bi₅Ti₃FeO₁₅ film.

PubMed

Zhao, Hongyang; Kimura, Hideo; Cheng, Zhenxiang; Osada, Minoru; Wang, Jianli; Wang, Xiaolin; Dou, Shixue; Liu, Yan; Yu, Jianding; Matsumoto, Takao; Tohei, Tetsuya; Shibata, Naoya; Ikuhara, Yuichi

2014-06-11

Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. However, single-phase materials with such cross-coupling properties at room temperature exist rarely in nature; new design of nano-engineered thin films with a strong magneto-electric coupling is a fundamental challenge. Here we demonstrate a robust room-temperature magneto-electric coupling in a bismuth-layer-structured ferroelectric Bi₅Ti₃FeO₁₅ with high ferroelectric Curie temperature of ~1000 K. Bi₅Ti₃FeO₁₅ thin films grown by pulsed laser deposition are single-phase layered perovskit with nearly (00l)-orientation. Room-temperature multiferroic behavior is demonstrated by a large modulation in magneto-polarization and magneto-dielectric responses. Local structural characterizations by transmission electron microscopy and Mössbauer spectroscopy reveal the existence of Fe-rich nanodomains, which cause a short-range magnetic ordering at ~620 K. In Bi₅Ti₃FeO₁₅ with a stable ferroelectric order, the spin canting of magnetic-ion-based nanodomains via the Dzyaloshinskii-Moriya interaction might yield a robust magneto-electric coupling of ~400 mV/Oe·cm even at room temperature.

Surface-properties relationship in sputtered Ag thin films: Influence of the thickness and the annealing temperature in nitrogen

NASA Astrophysics Data System (ADS)

Guillén, C.; Herrero, J.

2015-01-01

Metal layers with high roughness and electrical conductivity are required as back-reflector electrodes in several optoelectronic devices. The metal layer thickness and the process temperature should be adjusted to reduce the material and energetic costs for the electrode preparation. Here, Ag thin films with thickness ranging from 30 to 200 nm have been deposited by sputtering at room temperature on glass substrates. The structure, morphology, optical and electrical properties of the films have been analyzed in the as-grown conditions and after thermal treatment in flowing nitrogen at various temperatures in the 150-550 °C range. The surface texture has been characterized by the root-mean-square roughness and the correlation length coefficients, which are directly related to the electrical resistivity and the light-scattering parameter (reflectance haze) for the various samples. The increment in the reflectance haze has been used to detect surface agglomeration processes that are found dependent on both the film thickness and the annealing temperature. A good compromise between light-scattering and electrical conductivity has been achieved with 70 nm-thick Ag films after 350 °C heating.

Effect of morphology on the non-ohmic conduction in ZnO nanostructures

NASA Astrophysics Data System (ADS)

Praveen, E.; Jayakumar, K.

2016-05-01

Nanostructures of ZnO is synthesized with nanoflower like morphology by simple wet chemical method. The structural, morphological and electrical characterization have been carried out. The temperature dependent electrical characterization of ZnO pellets of thickness 1150 µm is made by the application of 925MPa pressure. The morphological dependence of non-ohmic conduction beyond some arbitrary tunneling potential and grain boundary barrier thickness is compared with the commercially available bulk ZnO. Our results show the suitability of nano-flower like ZnO for the devices like sensors, rectifiers etc.

Deposition temperature dependent optical and electrical properties of ALD HfO{sub 2} gate dielectrics pretreated with tetrakisethylmethylamino hafnium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, J.; School of Sciences, Anhui University of Science and Technology, Huainan 232001; He, G., E-mail: hegang@ahu.edu.cn

2015-10-15

Highlights: • ALD-derived HfO{sub 2} gate dielectrics have been deposited on Si substrates. • The leakage current mechanism for different deposition temperature was discussed. • Different emission at different field region has been determined precisely. - Abstract: The effect of deposition temperature on the growth rate, band gap energy and electrical properties of HfO{sub 2} thin film deposited by atomic layer deposition (ALD) has been investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the growth rate and optical constant of ALD-derived HfO{sub 2} gate dielectrics are determined precisely. The deposition temperature dependent electrical properties of HfO{sub 2}more » films were determined by capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements. The leakage current mechanism for different deposition temperature has been discussed systematically. As a result, the optimized deposition temperature has been obtained to achieve HfO{sub 2} thin film with high quality.« less

Vibration-induced electrical noise in a cryogen-free dilution refrigerator: Characterization, mitigation, and impact on qubit coherence

NASA Astrophysics Data System (ADS)

Laucht, Arne; Kalra, Rachpon; Dehollain, Juan P.; Bar, Daniel; Freer, Solomon; Simmons, Stephanie; Muhonen, Juha T.; Morello, Andrea

Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to the electrical signal observed on cables installed in a cryogen-free dilution refrigerator. The dominant electrical noise is in the 5-10 kHz range and its magnitude is found to be strongly temperature dependent. We test the performance of different cables designed to diagnose and tackle the noise, and find triboelectrics to be the dominant mechanism coupling the vibrations to the electrical signal. Flattening a semi-rigid cable or jacketing a flexible cable in order to restrict movement within the cable, successfully reduces the noise level by over an order of magnitude. Furthermore, we characterize the effect of the pulse tube vibrations on an electron spin qubit device in this setup. Coherence measurements are used to map out the spectrum of the noise experienced by the qubit, revealing spectral components matching the spectral signature of the pulse tube. This research was funded by the Australian Research Council (CE110001027) and the US Army Research Office (W911NF-13-1-0024).

Electro-thermal analysis of Lithium Iron Phosphate battery for electric vehicles

NASA Astrophysics Data System (ADS)

Saw, L. H.; Somasundaram, K.; Ye, Y.; Tay, A. A. O.

2014-03-01

Lithium ion batteries offer an attractive solution for powering electric vehicles due to their relatively high specific energy and specific power, however, the temperature of the batteries greatly affects their performance as well as cycle life. In this work, an empirical equation characterizing the battery's electrical behavior is coupled with a lumped thermal model to analyze the electrical and thermal behavior of the 18650 Lithium Iron Phosphate cell. Under constant current discharging mode, the cell temperature increases with increasing charge/discharge rates. The dynamic behavior of the battery is also analyzed under a Simplified Federal Urban Driving Schedule and it is found that heat generated from the battery during this cycle is negligible. Simulation results are validated with experimental data. The validated single cell model is then extended to study the dynamic behavior of an electric vehicle battery pack. The modeling results predict that more heat is generated on an aggressive US06 driving cycle as compared to UDDS and HWFET cycle. An extensive thermal management system is needed for the electric vehicle battery pack especially during aggressive driving conditions to ensure that the cells are maintained within the desirable operating limits and temperature uniformity is achieved between the cells.

Selective Screening of High Temperature Superconductors by Resonant Eddy Current Analysis

DTIC Science & Technology

1990-11-01

observable electronic parameters are both stable and well defined. Further, if the circuit possesses a resonance , then it has well characterized parameters and...Engineers Construction Engineering Research Laboratory - AD-A230 194 Selective Screening of High Temperature Superconductors by Resonant Eddy Current...electrical systems or electronic components from the effects of unwanted electromagnetic energy. With the discovery of High Transition Critical Temperature

Electrical Evaluation of RCA MWS5001D Random Access Memory, Volume 1

NASA Technical Reports Server (NTRS)

Klute, A.

1979-01-01

Electrical characterization and qualification tests were performed on the RCA MWS5001D, 1024 by 1-bit, CMOS, random access memory. Characterization tests were performed on five devices. The tests included functional tests, AC parametric worst case pattern selection test, determination of worst-case transition for setup and hold times and a series of schmoo plots. The qualification tests were performed on 32 devices and included a 2000 hour burn in with electrical tests performed at 0 hours and after 168, 1000, and 2000 hours of burn in. The tests performed included functional tests and AC and DC parametric tests. All of the tests in the characterization phase, with the exception of the worst-case transition test, were performed at ambient temperatures of 25, -55 and 125 C. The worst-case transition test was performed at 25 C. The preburn in electrical tests were performed at 25, -55, and 125 C. All burn in endpoint tests were performed at 25, -40, -55, 85, and 125 C.

Barium strontium titanate thin film growth with variation of lanthanum dopant compatibility as sensor prototype in the satellite technology

NASA Astrophysics Data System (ADS)

Mulyadi; Wahyuni, Rika; Hardhienata, Hendradi; Irzaman

2018-05-01

Electrical properties of barium strontium titanate thin films were investigated. Three layers of barium strontium titanate thin films have been prepared by chemical solution deposition method and spin coating technique at 8000 rpm rotational speed for 30 seconds and temperature of annealing at 850°C for eight hours with temperature increment of 1.67°C/minute. Materials produced by the process of lanthanum dopant with doping variations of 2%, 4% and 6% above type-p silicon (100) substrates. Film obtained was then carried out the characterization using USB 2000 VIS-NIR and tauc plot method. As a result, the barium strontium titanate thin film has the value of band gap energy of 1.58 eV, 1.92 eV and 2.24 eV respectively. The characterization of electrical properties shows that the band gap value of barium strontium titanate thin film with lanthanum dopant was in the range of semiconductor value. Barium strontium titanate thin films with lanthanum dopant are sensitive to temperature changes, so it potentially to be applied to temperature monitoring on satellite technology.

Ni-H2 cell characterization for INTELSAT programs

NASA Technical Reports Server (NTRS)

Dunnet, Andrew F.; Earl, Martin W.

1994-01-01

Various Ni/H2 cell designs manufactured for INTELSAT Programs during the past decade have been characterized electrically as a function of temperature. The resulting data for these INTELSAT V, VI, VII and VIIA cells are assembled in a manner which allows ready comparison of performance. Also included is a detailed description of each design.

Qualitative thermal characterization and cooling of lithium batteries for electric vehicles

NASA Astrophysics Data System (ADS)

Mariani, A.; D'Annibale, F.; Boccardi, G.; Celata, G. P.; Menale, C.; Bubbico, R.; Vellucci, F.

2014-04-01

The paper deals with the cooling of batteries. The first step was the thermal characterization of a single cell of the module, which consists in the detection of the thermal field by means of thermographic tests during electric charging and discharging. The purpose was to identify possible critical hot points and to evaluate the cooling demand during the normal operation of an electric car. After that, a study on the optimal configuration to obtain the flattening of the temperature profile and to avoid hot points was executed. An experimental plant for cooling capacity evaluation of the batteries, using air as cooling fluid, was realized in our laboratory in ENEA Casaccia. The plant is designed to allow testing at different flow rate and temperatures of the cooling air, useful for the assessment of operative thermal limits in different working conditions. Another experimental facility was built to evaluate the thermal behaviour changes with water as cooling fluid. Experimental tests were carried out on the LiFePO4 batteries, under different electric working conditions using the two loops. In the future, different type of batteries will be tested and the influence of various parameters on the heat transfer will be assessed for possible optimal operative solutions.

Gravimetric water distribution assessment from geoelectrical methods (ERT and EMI) in municipal solid waste landfill.

PubMed

Dumont, Gaël; Pilawski, Tamara; Dzaomuho-Lenieregue, Phidias; Hiligsmann, Serge; Delvigne, Frank; Thonart, Philippe; Robert, Tanguy; Nguyen, Frédéric; Hermans, Thomas

2016-09-01

The gravimetric water content of the waste material is a key parameter in waste biodegradation. Previous studies suggest a correlation between changes in water content and modification of electrical resistivity. This study, based on field work in Mont-Saint-Guibert landfill (Belgium), aimed, on one hand, at characterizing the relationship between gravimetric water content and electrical resistivity and on the other hand, at assessing geoelectrical methods as tools to characterize the gravimetric water distribution in a landfill. Using excavated waste samples obtained after drilling, we investigated the influences of the temperature, the liquid phase conductivity, the compaction and the water content on the electrical resistivity. Our results demonstrate that Archie's law and Campbell's law accurately describe these relationships in municipal solid waste (MSW). Next, we conducted a geophysical survey in situ using two techniques: borehole electromagnetics (EM) and electrical resistivity tomography (ERT). First, in order to validate the use of EM, EM values obtained in situ were compared to electrical resistivity of excavated waste samples from corresponding depths. The petrophysical laws were used to account for the change of environmental parameters (temperature and compaction). A rather good correlation was obtained between direct measurement on waste samples and borehole electromagnetic data. Second, ERT and EM were used to acquire a spatial distribution of the electrical resistivity. Then, using the petrophysical laws, this information was used to estimate the water content distribution. In summary, our results demonstrate that geoelectrical methods represent a pertinent approach to characterize spatial distribution of water content in municipal landfills when properly interpreted using ground truth data. These methods might therefore prove to be valuable tools in waste biodegradation optimization projects. Copyright © 2016 Elsevier Ltd. All rights reserved.

Electrical and mechanical behavior of PMN-PT/CNT based polymer composite film for energy harvesting

NASA Astrophysics Data System (ADS)

Das, Satyabati; Biswal, Asutya Kumar; Parida, Kalpana; Choudhary, R. N. P.; Roy, Amritendu

2018-01-01

The pyrochlore-free 30-PMN-PT/CNT/PVDF based piezoelectric flexible composite film has been synthesized for potential application in piezoelectric energy harvesting. Electrical characterization reveals that the maximum output voltage and current generated by the 30 vol.% PMN-PT/CNT/PVDF composite is ∼4 V and 30 nA respectively, comparable with the available literature. Further, impedance analysis has revealed a significant improvement in permittivity at low frequency and high temperature with a minimal dielectric loss. AC conductivity behavior fits well with Johnscher's universal power law that predicts the motion of the charge carriers is translational with sudden hopping. The Nyquist plots indicate the contributions of both grain and grain boundaries at lower temperature (25-100 °C) and additional electrode effect of higher temperature (100-150 °C) on the capacitive and resistive properties of the composite. Mechanical characterization of the composite shows an increase in Young's modulus of 705 MPa compared to 597 MPa in pure PVDF.

SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

NASA Astrophysics Data System (ADS)

Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

2016-05-01

The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

Electrical network method for the thermal or structural characterization of a conducting material sample or structure

DOEpatents

Ortiz, Marco G.

1993-01-01

A method for modeling a conducting material sample or structure system, as an electrical network of resistances in which each resistance of the network is representative of a specific physical region of the system. The method encompasses measuring a resistance between two external leads and using this measurement in a series of equations describing the network to solve for the network resistances for a specified region and temperature. A calibration system is then developed using the calculated resistances at specified temperatures. This allows for the translation of the calculated resistances to a region temperature. The method can also be used to detect and quantify structural defects in the system.

Electrical network method for the thermal or structural characterization of a conducting material sample or structure

DOEpatents

Ortiz, M.G.

1993-06-08

A method for modeling a conducting material sample or structure system, as an electrical network of resistances in which each resistance of the network is representative of a specific physical region of the system. The method encompasses measuring a resistance between two external leads and using this measurement in a series of equations describing the network to solve for the network resistances for a specified region and temperature. A calibration system is then developed using the calculated resistances at specified temperatures. This allows for the translation of the calculated resistances to a region temperature. The method can also be used to detect and quantify structural defects in the system.

Functional Characterization of a Novel Shape Memory Alloy

NASA Astrophysics Data System (ADS)

Collado, M.; Cabás, R.; San Juan, J.; López-Ferreño, I.

2014-07-01

A novel shape memory alloy (SMA) has been developed as an alternative to currently available alloys. This alloy, commercially known by its proprietary brand SMARQ, shows a higher working range of temperatures with respect to the SMA materials used until now in actuators, limited to environment temperatures below 90 °C. SMARQ is a high temperature SMA (HTSMA) based on a fully European material technology and production processes, which allows the manufacture of high quality products, with tuneable transformation temperatures up to 200 °C. Both, material and production processes have been evaluated for its use in space applications. A full characterization test campaign has been completed in order to obtain the material properties and check its suitability to be used as active material in space actuators. In order to perform the functional characterization of the material, it has been considered as the key element of a basic SMA actuator, consisting in the SMA wire and the mechanical and electrical interfaces. The functional tests presented in this work have been focused on the actuator behavior when heated by means of an electrical current. Alloy composition has been adjusted in order to match a transition temperature (As) of +145 °C, which satisfies the application requirements of operating temperatures in the range of -70 and +125 °C. Details of the tests and results of the characterization test campaign, focused in the material unique properties for their use in actuators, will be presented in this work. Some application examples in the field of space mechanisms and actuators, currently under development, will be summarized as part of this work, demonstrating the technology suitability as active material for space actuators.

High temperature GaAs X-ray detectors

NASA Astrophysics Data System (ADS)

Lioliou, G.; Whitaker, M. D. C.; Barnett, A. M.

2017-12-01

Two GaAs p+-i-n+ mesa X-ray photodiodes were characterized for their electrical and photon counting X-ray spectroscopic performance over the temperature range of 100 °C to -20 °C. The devices had 10 μm thick i layers with different diameters: 200 μm (D1) and 400 μm (D2). The electrical characterization included dark current and capacitance measurements at internal electric field strengths of up to 50 kV/cm. The determined properties of the two devices were compared with previously reported results that were made with a view to informing the future development of photon counting X-ray spectrometers for harsh environments, e.g., X-ray fluorescence spectroscopy of planetary surfaces in high temperature environments. The best energy resolution obtained (Full Width at Half Maximum at 5.9 keV) decreased from 2.00 keV at 100 °C to 0.66 keV at -20 °C for the spectrometer with D1, and from 2.71 keV at 100 °C to 0.71 keV at -20 °C for the spectrometer with D2. Dielectric noise was found to be the dominant source of noise in the spectra, apart from at high temperatures and long shaping times, where the main source of photopeak broadening was found to be the white parallel noise.

Crystal Lattice Controlled SiGe Thermoelectric Materials with High Figure of Merit

NASA Technical Reports Server (NTRS)

Kim, Hyun-Jung; Park, Yeonjoon; King, Glen C.; Lee, Kunik; Choi, Sang H.

2010-01-01

Direct energy conversion between thermal and electrical energy, based on thermoelectric (TE) effect, has the potential to recover waste heat and convert it to provide clean electric power. The energy conversion efficiency is related to the thermoelectric figure of merit ZT expressed as ZT=S(exp 2)(sigma)T/Kappa, T is temperature, S is the Seebeck coefficient, sigma is conductance and Kappa is thermal conductivity. For a lower thermal conductivity Kappa and high power factor (S(exp 2)(sigma)), our current strategy is the development of rhombohedrally strained single crystalline SiGe materials that are highly [111]-oriented twinned. The development of a SiGe "twin lattice structure (TLS)" plays a key role in phonon scattering. The TLS increases the electrical conductivity and decreases thermal conductivity due to phonon scattering at stacking faults generated from the 60 X rotated primary twin structure. To develop high performance materials, the substrate temperature, chamber working pressure, and DC sputtering power are controlled for the aligned growth production of SiGe layer and TLS on a c-plane sapphire. Additionally, a new elevated temperature thermoelectric characterization system, that measures the thermal diffusivity and Seebeck effect nondestructively, was developed. The material properties were characterized at various temperatures and optimized process conditions were experimentally determined. The present paper encompasses the technical discussions toward the development of thermoelectric materials and the measurement techniques.

Characterizing the temperature dependence of electronic packaging-material properties

NASA Astrophysics Data System (ADS)

Fu, Chia-Yu; Ume, Charles

1995-06-01

A computer-controlled, temperature-dependent material characterization system has been developed for thermal deformation analysis in electronic packaging applications, especially for printed wiring assembly warpage study. For fiberglass-reinforced epoxy (FR-4 type) material, the Young's moduli decrease to as low as 20-30% of the room-temperature values, while the shear moduli decrease to as low as 60-70% of the room-temperature values. The electrical resistance strain gage technique was used in this research. The test results produced overestimated values in property measurements, and this was shown in a case study. A noncontact strau]n measurement technique (laser extensometer) is now being used to measure these properties. Discrepancies of finite-element warpage predictions using different property values increase as the temperature increases from the stress-free temperature.

Synthesis and structural characterization of bulk Sb2Te3 single crystal

NASA Astrophysics Data System (ADS)

Sultana, Rabia; Gahtori, Bhasker; Meena, R. S.; Awana, V. P. S.

2018-05-01

We report the growth and characterization of bulk Sb2Te3 single crystal synthesized by the self flux method via solid state reaction route from high temperature melt (850˚C) and slow cooling (2˚C/hour) of constituent elements. The single crystal X-ray diffraction pattern showed the 00l alignment and the high crystalline nature of the resultant sample. The rietveld fitted room temperature powder XRD revealed the phase purity and rhombohedral structure of the synthesized crystal. The formation and analysis of unit cell structure further verified the rhombohedral structure composed of three quintuple layers stacked one over the other. The SEM image showed the layered directional growth of the synthesized crystal carried out using the ZEISS-EVOMA-10 scanning electron microscope The electrical resistivity measurement was carried out using the conventional four-probe method on a quantum design Physical Property Measurement System (PPMS). The temperature dependent electrical resistivity plot for studied Sb2Te3 single crystal depicts metallic behaviour in the absence of any applied magnetic field. The synthesis as well as the structural characterization of as grown Sb2Te3 single crystal is reported and discussed in the present letter.

Dielectric and ac ionic conductivity investigation of Li2SrP2O7

NASA Astrophysics Data System (ADS)

Ajili, O.; Louati, B.; Guidara, K.

2018-07-01

The pyrophosphate Li2SrP2O7 compound has been synthesized by the classic ceramic method and characterized by X-ray diffraction, IR, Raman and electrical impedance spectroscopy. Detailed electrical properties of the compound were analyzed as a function of frequency (209 Hz-1 MHz) and temperature (519-628) K. Impedance analysis exhibits the grain and grain boundary contribution to the electrical response of the sample. The temperature dependence of these contribution obey the Arrhenius law with activation energies (1.03 ± 0.05) and (1.25 ± 0.05) eV, respectively. The ac conductivity for grain contribution was interpreted using the universal Jonscher's power law. The temperature dependence of frequency exponent s was investigated to understand the conduction mechanism. The correlated barrier hopping model was found to be the best model describing the conduction mechanism.

Dielectric and ac ionic conductivity investigation of Li2SrP2O7

NASA Astrophysics Data System (ADS)

Ajili, O.; Louati, B.; Guidara, K.

2018-02-01

The pyrophosphate Li2SrP2O7 compound has been synthesized by the classic ceramic method and characterized by X-ray diffraction, IR, Raman and electrical impedance spectroscopy. Detailed electrical properties of the compound were analyzed as a function of frequency (209 Hz-1 MHz) and temperature (519-628) K. Impedance analysis exhibits the grain and grain boundary contribution to the electrical response of the sample. The temperature dependence of these contribution obey the Arrhenius law with activation energies (1.03 ± 0.05) and (1.25 ± 0.05) eV, respectively. The ac conductivity for grain contribution was interpreted using the universal Jonscher's power law. The temperature dependence of frequency exponent s was investigated to understand the conduction mechanism. The correlated barrier hopping model was found to be the best model describing the conduction mechanism.

Redistribution of oxygen ions in single crystal YBa2Cu3O7-x owing to external hydrostatic pressure

NASA Astrophysics Data System (ADS)

Boiko, Yu. I.; Bogdanov, V. V.; Vovk, R. V.; Khadzhai, G. Ya.; Savich, S. V.

2018-01-01

The effect of high hydrostatic pressure on the temperature dependences of the electrical resistance in the basal plane of single crystal YBa2Cu3O7-x with an oxygen deficit is studied. It is found that an external hydrostatic pressure P ≈ 7 kbar substantially intensifies the diffusive coalescence of oxygen clusters, i.e., causes an increase in their average size. This, in turn, produces an increased number of negative U-centers whose presence leads to the appearance of a phase capable of generating paired carriers of electrical charge and is, therefore, characterized by a higher transition temperature Tc. Changes in the form of the temperature and time dependences of the electrical resistivity under external hydrostatic pressure are discussed in terms of this same hypothesis regarding the mechanism of diffusive coalescence of oxygen clusters.

Magnetic structure driven ferroelectricity and large magnetoelectric coupling in antiferromagnet Co4Nb2O9

NASA Astrophysics Data System (ADS)

Srivastava, P.; Chaudhary, S.; Maurya, V.; Saha, J.; Kaushik, S. D.; Siruguri, V.; Patnaik, S.

2018-05-01

Synthesis and extensive structural, pyroelectric, magnetic, dielectric and magneto-electric characterizations are reported for polycrystalline Co4Nb2O9 towards unraveling the multiferroic ground state. Magnetic measurements confirm that Co4Nb2O9 becomes an anti-ferromagnet at around 28 K. Associated with the magnetic phase transition, a sharp peak in pyroelectric current indicates the appearance of strong magneto-electric coupling below Neel temperature (TN) along with large coupling constant upto 17.8 μC/m2T. Using temperature oscillation technique, we establish Co4Nb2O9 to be a genuine multiferroic with spontaneous electric polarization in the anti-ferromagnetic state in the absence of magnetic field poling. This is in agreement with our low temperature neutron diffraction studies that show the magnetic structure of Co4Nb2O9 to be that of a non-collinear anti-ferromagnet with ferroelectric ground state.

Evaluation of 2004 Toyota Prius Hybrid Electric Drive System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Staunton, R. H.; Ayers, C. W.; Marlino, L. D.

2006-05-01

The 2004 Toyota Prius is a hybrid automobile equipped with a gasoline engine and a battery- and generator-powered electric motor. Both of these motive-power sources are capable of providing mechanical-drive power for the vehicle. The engine can deliver a peak-power output of 57 kilowatts (kW) at 5000 revolutions per minute (rpm) while the motor can deliver a peak-power output of 50 kW over the speed range of 1200–1540 rpm. Together, this engine-motor combination has a specified peak-power output of 82 kW at a vehicle speed of 85 kilometers per hour (km/h). In operation, the 2004 Prius exhibits superior fuel economymore » compared to conventionally powered automobiles. To acquire knowledge and thereby improve understanding of the propulsion technology used in the 2004 Prius, a full range of design characterization studies were conducted to evaluate the electrical and mechanical characteristics of the 2004 Prius and its hybrid electric drive system. These characterization studies included (1) a design review, (2) a packaging and fabrication assessment, (3) bench-top electrical tests, (4) back-electromotive force (emf) and locked rotor tests, (5) loss tests, (6) thermal tests at elevated temperatures, and most recently (7) full-design-range performance testing in a controlled laboratory environment. This final test effectively mapped the electrical and thermal results for motor/inverter operation over the full range of speeds and shaft loads that these assemblies are designed for in the Prius vehicle operations. This testing was undertaken by the Oak Ridge National Laboratory (ORNL) as part of the U.S. Department of Energy (DOE) – Energy Efficiency and Renewable Energy (EERE) FreedomCAR and Vehicle Technologies (FCVT) program through its vehicle systems technologies subprogram. The thermal tests at elevated temperatures were conducted late in 2004, and this report does not discuss this testing in detail. The thermal tests explored the derating of the Prius motor design if operated at temperatures as high as is normally encountered in a vehicle engine. The continuous ratings at base speed (1200 rpm) with different coolant temperatures are projected from test data at 900 rpm. A separate, comprehensive report on this thermal control study is available. This report summarizes vehicle-level and subsystem-level test results obtained for the 2004 Prius and various electrical and mechanical subassemblies of its hybrid electric drive system. The primary objective of these tests was to (1) characterize the electrical and mechanical performance of the 2004 Prius, and (2) map the performance of the inverter/motor system over the full design speed and load ranges.« less

Temperature-dependent impedance spectroscopy of La0.8Sr0.2FeO3 nano-crystalline material

NASA Astrophysics Data System (ADS)

Kafa, C. A.; Triyono, D.; Laysandra, H.

2017-04-01

LaFeO3 is a material with perovskite structure which electrical properties frequently investigated. Research are done due to the exhibition of excellent gas sensing behavior through resistivity comparison from the p-type semiconductor. Sr doping on LaFeO3 or La1-xSrxFeO3 are able to improve the electrical conductivity through structural modification. Using Sr dopant concentration (x) of 0.2, La0.8Sr0.2FeO3 nano-crystal pellet was synthesized. The synthesis used sol-gel method, followed by gradual heat treatment and uniaxial compaction. XRD characterization shows that the structure of the sample is Orthorhombic Perovskite. Topography of the sample by SEM reveals grain and grain boundary existence with emerging agglomeration. The electrical properties of the material, as functions of temperature and frequency, were measured by Impedance Spectroscopy method using RLC meter, for temperatures of 303-373K. Through the Nyquist plot and Bode plot, the electrical conductivity of La0.8Sr0.2FeO3 is contributed by the grain and grain boundary. Finally, the electrical permittivities of La0.8Sr0.2FeO3 are increasing with temperature increase, with the highest achieved when measured at 1 kHz frequency.

High-Temperature Electromechanical Characterization of AlN Single Crystals.

PubMed

Kim, Taeyang; Kim, Jinwook; Dalmau, Rafael; Schlesser, Raoul; Preble, Edward; Jiang, Xiaoning

2015-10-01

Hexagonal AlN is a non-ferroelectric material and does not have any phase transition up to its melting point (>2000°C), which indicates the potential use of AlN for high-temperature sensing. In this work, the elastic, dielectric, and piezoelectric constants of AlN single crystals were investigated at elevated temperatures up to 1000°C by the resonance method. We used resonators of five different modes to obtain a complete set of material constants of AlN single crystals. The electrical resistivity of AlN at elevated temperature (1000°C) was found to be greater than 5 × 10(10) Ω · cm. The resonance frequency of the resonators, which was mainly determined by the elastic compliances, decreased linearly with increasing temperature, and was characterized by a relatively low temperature coefficient of frequency, in the range of -20 to -36 ppm/°C. For all the investigated resonator modes, the elastic constants and the electromechanical coupling factors exhibited excellent temperature stability, with small variations over the full temperature range, <11.2% and <17%, respectively. Of particular significance is that due to the pyroelectricity of AlN, both the dielectric and the piezoelectric constants had high thermal resistivity even at extreme high temperature (1000°C). Therefore, high electrical resistivity, temperature independence of electromechanical properties, as well as high thermal resistivity of the elastic, dielectric, and piezoelectric properties, suggest that AlN single crystals are a promising candidate for high-temperature piezoelectric sensing applications.

Thermo-optical characterization of fluorescent rhodamine B based temperature-sensitive nanosensors using a CMOS MEMS micro-hotplate☆

PubMed Central

Chauhan, Veeren M.; Hopper, Richard H.; Ali, Syed Z.; King, Emma M.; Udrea, Florin; Oxley, Chris H.; Aylott, Jonathan W.

2014-01-01

A custom designed microelectromechanical systems (MEMS) micro-hotplate, capable of operating at high temperatures (up to 700 °C), was used to thermo-optically characterize fluorescent temperature-sensitive nanosensors. The nanosensors, 550 nm in diameter, are composed of temperature-sensitive rhodamine B (RhB) fluorophore which was conjugated to an inert silica sol–gel matrix. Temperature-sensitive nanosensors were dispersed and dried across the surface of the MEMS micro-hotplate, which was mounted in the slide holder of a fluorescence confocal microscope. Through electrical control of the MEMS micro-hotplate, temperature induced changes in fluorescence intensity of the nanosensors was measured over a wide temperature range. The fluorescence response of all nanosensors dispersed across the surface of the MEMS device was found to decrease in an exponential manner by 94%, when the temperature was increased from 25 °C to 145 °C. The fluorescence response of all dispersed nanosensors across the whole surface of the MEMS device and individual nanosensors, using line profile analysis, were not statistically different (p < 0.05). The MEMS device used for this study could prove to be a reliable, low cost, low power and high temperature micro-hotplate for the thermo-optical characterisation of sub-micron sized particles. The temperature-sensitive nanosensors could find potential application in the measurement of temperature in biological and micro-electrical systems. PMID:25844025

Synthesis and electrical properties of (Pb,Co)Sr2(Y,Ca)Cu2Oz

NASA Astrophysics Data System (ADS)

Tashiro, T.; Maeda, T.; Abe, R.; Takechi, S.; Takahashi, T.; Haruta, M.; Horii, S.

One of related materials to high-temperature superconductors (HTSC's) with nominal compositions of (Pb0.5Co0.5)Sr2(Y1xCax)Cu2Oz (x=0∼0.6) is synthesized and characterized. All samples are nearly single-phase, and its crystal structure is likely to be so-called "1-2-1-2" type which is one of typical structures of HTSC's. Electrical resistivity is decreased as x increases. While superconductivity is not observed at temperatures between room-temperature and 20 K for all samples, temperature dependence of the resistivity exhibits metallic behavior down to 150 K for x=0.5. Phase formation and transport behavior are discussed focusing on mixed valence-state of Co2+ and Co3+.

Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering

NASA Astrophysics Data System (ADS)

Li, Yan; Zhang, Dongping; Wang, Bo; Liang, Guangxing; Zheng, Zhuanghao; Luo, Jingting; Cai, Xingmin; Fan, Ping

2013-12-01

Vanadium oxide thin films were prepared by DC reactive sputtering method, and the samples were annealed in Ar atmosphere under different temperature for 2 hours. The microstructure, optical and electrical properties of the as-grown and treated samples were characterized by XRD, spectrophotometer, and four-probe technique, respectively. XRD results investigated that the main content of the annealed sample are VO2 and V2O5. With annealing temperature increasing, the intensity of the VO2 phase diffraction peak strengthened. The electrical properties reveal that the annealed samples exhibit semiconductor-to-metal transition characteristic at about 40°C. Comparison of transmission spectra of the samples at room temperature and 100°C, a drastic drop in IR region is found.

Annealing of Heavily Boron-Doped Silicon: Effect on Electrical and Thermoelectric Properties.

PubMed

Zulian, Laura; Segrado, Francesco; Narducci, Dario

2017-03-01

In previous studies it was shown that heavily boron-doped nanocrystalline silicon submitted to thermal treatments at temperatures ≥800 °C is characterized by an anomalously high thermoelectric power factor. Its enhanced performances were ascribed to the formation of SiBx precipitates at grain boundary, leading to the formation of potential barriers that filter out low-energy carriers, then causing a simultaneous enhancement of the Seebeck coefficient and of the electrical conductivity. To further investigate the effect of thermal treatment on boron-doped nanocrystalline silicon, samples were submitted to a host of annealing processes or of sequences of them at temperatures between 900 and 1000 °C and for various amounts of time. Electrical conductivity and Hall effect measurements were carried out after each thermal treatment over the temperature range 20–300 K. They provided evidence of the formation of an impurity band, and of hopping conduction at very low temperatures. Hall resistivity data versus temperature provided therefore important insights in the electronic structure of the system, which will enable a more complete understanding of the factors ruling energy filtering in this class of materials.

Temperature-Dependent Charge Transport through Individually Contacted DNA Origami-Based Au Nanowires.

PubMed

Teschome, Bezu; Facsko, Stefan; Schönherr, Tommy; Kerbusch, Jochen; Keller, Adrian; Erbe, Artur

2016-10-11

DNA origami nanostructures have been used extensively as scaffolds for numerous applications such as for organizing both organic and inorganic nanomaterials, studying single molecule reactions, and fabricating photonic devices. Yet, little has been done toward the integration of DNA origami nanostructures into nanoelectronic devices. Among other challenges, the technical difficulties in producing well-defined electrical contacts between macroscopic electrodes and individual DNA origami-based nanodevices represent a serious bottleneck that hinders the thorough characterization of such devices. Therefore, in this work, we have developed a method to electrically contact individual DNA origami-based metallic nanowires using electron beam lithography. We then characterize the charge transport of such nanowires in the temperature range from room temperature down to 4.2 K. The room temperature charge transport measurements exhibit ohmic behavior, whereas at lower temperatures, multiple charge transport mechanisms such as tunneling and thermally assisted transport start to dominate. Our results confirm that charge transport along metallized DNA origami nanostructures may deviate from pure metallic behavior due to several factors including partial metallization, seed inhomogeneities, impurities, and weak electronic coupling among AuNPs. Besides, this study further elucidates the importance of variable temperature measurements for determining the dominant charge transport mechanisms for conductive nanostructures made by self-assembly approaches.

Assessment of Moderate- and High-Temperature Geothermal Resources of the United States

USGS Publications Warehouse

Williams, Colin F.; Reed, Marshall J.; Mariner, Robert H.; DeAngelo, Jacob; Galanis, S. Peter

2008-01-01

Scientists with the U.S. Geological Survey (USGS) recently completed an assessment of our Nation's geothermal resources. Geothermal power plants are currently operating in six states: Alaska, California, Hawaii, Idaho, Nevada, and Utah. The assessment indicates that the electric power generation potential from identified geothermal systems is 9,057 Megawatts-electric (MWe), distributed over 13 states. The mean estimated power production potential from undiscovered geothermal resources is 30,033 MWe. Additionally, another estimated 517,800 MWe could be generated through implementation of technology for creating geothermal reservoirs in regions characterized by high temperature, but low permeability, rock formations.

Electric field effect on exchange interaction in ultrathin Co films with ionic liquids

NASA Astrophysics Data System (ADS)

Ishibashi, Mio; Yamada, Kihiro T.; Shiota, Yoichi; Ando, Fuyuki; Koyama, Tomohiro; Kakizakai, Haruka; Mizuno, Hayato; Miwa, Kazumoto; Ono, Shimpei; Moriyama, Takahiro; Chiba, Daichi; Ono, Teruo

2018-06-01

Electric-field modulations of magnetic properties have been extensively studied not only for practical applications but also for fundamental interest. In this study, we investigated the electric field effect on the exchange interaction in ultrathin Co films with ionic liquids. The exchange coupling J was characterized from the direct magnetization measurement as a function of temperature using Pt/ultrathin Co/MgO structures. The trend of the electric field effect on J is in good agreement with that of the theoretical prediction, and a large change in J by applying a gate voltage was observed by forming an electric double layer using ionic liquids.

Electrical Characterization of Hughes HCMP 1853D and RCA CDP1853D N-bit, CMOS, 1-of-8 Decoder Microcircuits

NASA Technical Reports Server (NTRS)

Stokes, R. L.

1979-01-01

Electrical characterization tests were performed on two different manufactured types of integrated circuits. The devices were subjected to functional and AC and DC parametric tests at ambient temperatures of -55 C, -20 C, 25 C, 85 C, and 125 C. The data were analyzed and tabulated to show the effect of operating conditions on performance and to indicate parameter deviations among devices in each group. Accuracy was given precedence over test time efficiency where practical, and tests were designed to measure worst case performance.

Synthesis and characterization of iron based superconductor Nd-1111

NASA Astrophysics Data System (ADS)

Alborzi, Z.; Daadmehr, V.

2018-06-01

Polycrystalline sample of NdFeAsO0.8F0.2 was prepared by one-step solid-state reaction method. The structural and electrical properties of sample were characterized through XRD pattern and the 4-probe method. The critical temperature was obtained at 56 K. The crystal structure was tetragonal with P4/nmm:2 symmetry group.

Microwave processed NiMg ferrite: Studies on structural and magnetic properties

NASA Astrophysics Data System (ADS)

Chandra Babu Naidu, K.; Madhuri, W.

2016-12-01

Ferrites are magnetic semiconductors realizing an important role in electrical and electronic circuits where electrical and magnetic property coupling is required. Though ferrite materials are known for a long time, there is a large scope in the improvement of their properties (vice sintering and frequency dependence of electrical and magnetic properties) with the current technological trends. Forth coming technology is aimed at miniaturization and smart gadgets, electrical components like inductors and transformers cannot be included in integrated circuits. These components are incorporated into the circuit as surface mount devices whose fabrication involves low temperature co-firing of ceramics and microwave monolithic integrated circuits technologies. These technologies demand low temperature sinter-ability of ferrites. This article presents low temperature microwave sintered Ni-Mg ferrites of general chemical formula Ni1-xMgxFe2O4 (x=0, 0.2, 0.4, 0.5, 0.6, 0.8, 1) for potential applications as transformer core materials. The series of ferrites are characterized using X-ray diffractometer, scanning electron microscopy, Fourier transform infrared and vibrating sample magnetometer for investigating structural, morphological and magnetic properties respectively. The initial permeability is studied with magnesium content, temperature and frequency in the temperature range of 308 K-873 K and 42 Hz-5 MHz.

Effect of annealing temperature on structural, morphological and electrical properties of nanoparticles TiO{sub 2} thin films by sol-gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muaz, A. K. M.; Hashim, U., E-mail: uda@unimap.edu.my; Arshad, M. K. Md.

2016-07-06

In this paper, the sol-gel method is used to prepare nanoparticles titanium dioxide (TiO{sub 2}) thin films at different annealing temperature. The prepared sol was deposited on the p-SiO{sub 2} substrates by spin coating technique under room temperature. The nanoparticles TiO{sub 2} solution was synthesized using Ti{OCH(CH_3)_2}{sub 4} as a precursor with an methanol solution at a molar ratio 1:10. The prepared TiO{sub 2} sols will further validate through structural, morphological and electrical properties. From the X-ray diffraction (XRD) analysis, as-deposited films was found to be amorphous in nature and tend to transform into tetragonal anatase and rutile phase asmore » the films annealed at 573 and 773 K, respectively. The diversification of the surface roughness was characterized by atomic force microscopy (AFM) indicated the roughness and thickness very dependent on the annealing temperature. The two-point probe electrical resistance and conductance of nanoparticles TiO{sub 2} thin films were determined by the DC current-voltage (IV) analysis. From the I-V measurement, the electrical conductance increased as the films annealed at higher temperature.« less

Thermally Stimulated Currents in Nanocrystalline Titania

PubMed Central

Bruzzi, Mara; Mori, Riccardo; Baldi, Andrea; Cavallaro, Alessandro; Scaringella, Monica

2018-01-01

A thorough study on the distribution of defect-related active energy levels has been performed on nanocrystalline TiO2. Films have been deposited on thick-alumina printed circuit boards equipped with electrical contacts, heater and temperature sensors, to carry out a detailed thermally stimulated currents analysis on a wide temperature range (5–630 K), in view to evidence contributions from shallow to deep energy levels within the gap. Data have been processed by numerically modelling electrical transport. The model considers both free and hopping contribution to conduction, a density of states characterized by an exponential tail of localized states below the conduction band and the convolution of standard Thermally Stimulated Currents (TSC) emissions with gaussian distributions to take into account the variability in energy due to local perturbations in the highly disordered network. Results show that in the low temperature range, up to 200 K, hopping within the exponential band tail represents the main contribution to electrical conduction. Above room temperature, electrical conduction is dominated by free carriers contribution and by emissions from deep energy levels, with a defect density ranging within 1014–1018 cm−3, associated with physio- and chemi-sorbed water vapour, OH groups and to oxygen vacancies. PMID:29303976

Thermally Stimulated Currents in Nanocrystalline Titania.

PubMed

Bruzzi, Mara; Mori, Riccardo; Baldi, Andrea; Carnevale, Ennio Antonio; Cavallaro, Alessandro; Scaringella, Monica

2018-01-05

A thorough study on the distribution of defect-related active energy levels has been performed on nanocrystalline TiO₂. Films have been deposited on thick-alumina printed circuit boards equipped with electrical contacts, heater and temperature sensors, to carry out a detailed thermally stimulated currents analysis on a wide temperature range (5-630 K), in view to evidence contributions from shallow to deep energy levels within the gap. Data have been processed by numerically modelling electrical transport. The model considers both free and hopping contribution to conduction, a density of states characterized by an exponential tail of localized states below the conduction band and the convolution of standard Thermally Stimulated Currents (TSC) emissions with gaussian distributions to take into account the variability in energy due to local perturbations in the highly disordered network. Results show that in the low temperature range, up to 200 K, hopping within the exponential band tail represents the main contribution to electrical conduction. Above room temperature, electrical conduction is dominated by free carriers contribution and by emissions from deep energy levels, with a defect density ranging within 10 14 -10 18 cm -3 , associated with physio- and chemi-sorbed water vapour, OH groups and to oxygen vacancies.

Electrical properties and oxygen functionalities in ethanol-treated and thermally modified graphene oxide

NASA Astrophysics Data System (ADS)

Scalese, S.; Baldo, S.; D'Angelo, D.; Filice, S.; Bongiorno, C.; Reitano, R.; Fazio, E.; Conoci, S.; La Magna, A.

2017-04-01

Graphene-based materials are among the most innovative and promising materials for the development of high-performance sensing devices, mainly due to the large surface area and the possibility to modify their reactivity by suitable functionalization. In the field of sensing applications, the peculiarities of innovative materials can be exploited only if chemical and physical properties are fully understood and correlated with each other. To this aim, in this work, graphene oxide (GO) and ethanol-treated GO (GOEt) were investigated from chemical and structural points of view. Electrical characterization was performed by depositing GO and GOEt between two electrodes by dielectrophoresis. All the investigations were repeated on GO materials after thermal treatment in a low temperature range (60 °C-300 °C). Furthermore, the electrical conductivity of GO was investigated by changing the temperature and the environment (air or N2) during the characterization: an increase in the conductivity of the as-deposited GO was observed when the device is cooled down and this effect is reversible with the temperature. GOEt and the thermally treated GO and GOEt show an opposite trend, confirming the key role of the oxygen functionalities in the conduction mechanisms and, therefore, in the conductivity of the GO layers.

Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

DOE PAGES

Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon A.; ...

2016-04-21

Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I–V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e.,more » positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III–V/Si heterogeneously integrated electronics.« less

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

NASA Astrophysics Data System (ADS)

Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

The impacts of inserting ultrathin oxides into insulator/AlGaN interfaces on their electrical properties were investigated to develop advanced AlGaN/GaN metal–oxide–semiconductor (MOS) gate stacks. For this purpose, the initial thermal oxidation of AlGaN surfaces in oxygen ambient was systematically studied by synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and atomic force microscopy (AFM). Our physical characterizations revealed that, when compared with GaN surfaces, aluminum addition promotes the initial oxidation of AlGaN surfaces at temperatures of around 400 °C, followed by smaller grain growth above 850 °C. Electrical measurements of AlGaN/GaN MOS capacitors also showed that, although excessive oxidation treatment of AlGaN surfaces over around 700 °C has an adverse effect, interface passivation with the initial oxidation of the AlGaN surfaces at temperatures ranging from 400 to 500 °C was proven to be beneficial for fabricating high-quality AlGaN/GaN MOS gate stacks.

Electric-field-temperature phase diagram of Mn-doped Bi{sub 0.5}(Na{sub 0.9}K{sub 0.1}){sub 0.5}TiO{sub 3} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ehara, Yoshitaka, E-mail: Ehara@ceramics.tu-darmstadt.de; Novak, Nikola; Yasui, Shintaro

2015-12-28

An electric field–temperature (E-T) phase diagram for a lead-free 0.5 mol. % Mn-doped Bi(Na{sub 0.1}K{sub 0.9})TiO{sub 3} ceramics was investigated. The x-ray diffraction, dielectric and polarization measurements revealed relaxor behavior and were used to characterize the stability regions of the non-ergodic relaxor, ergodic relaxor and electric field induced ferroelectric states. As indicated by the polarization–current density profiles, transformation between two electric fields, induced ferroelectric states with opposite polarization direction arise via a two-step process through an intermediate relaxor state. Interplay between the ferroelectric state conversion and intermediate relaxor state is governed by the dynamics of polarization relaxation. The presented E-T phase diagrammore » revealed the effects of the applied electric field and temperature on stability regions. This is of special interest since the Bi{sub 0.5}(Na{sub 0.1}K{sub 0.9}){sub 0.5}TiO{sub 3} ceramics were proposed as a potential piezoceramic material.« less

Study of the temperature dependent transport properties in nanocrystalline lithium lanthanum titanate for lithium ion batteries

NASA Astrophysics Data System (ADS)

Abhilash, K. P.; Christopher Selvin, P.; Nalini, B.; Somasundaram, K.; Sivaraj, P.; Chandra Bose, A.

2016-04-01

The nano-crystalline Li0.5La0.5TiO3 (LLTO) was prepared as an electrolyte material for lithium-ion batteries by the sol-gel method. The prepared LLTO material is characterized by structural, morphological and electrical characterizations. The LLTO shows the cubic perovskite structure with superlattice formation. The uniform distribution of LLTO particles has been analyzed by the SEM and TEM analysis of the sample. Impedance measurements at various temperatures were carried out and the temperature dependent conductivity of as prepared LLTO nanopowders at different temperatures from room temperature to 448 K has been analyzed. The transport mechanism has been analyzed using the dielectric and modulus analysis of the sample. Maximum grain conductivity of the order of 10-3 S cm-1 has been obtained for the sample at higher temperatures.

Semi-automatic characterization and simulation of VCSEL devices for high speed VSR communications

NASA Astrophysics Data System (ADS)

Pellevrault, S.; Toffano, Z.; Destrez, A.; Pez, M.; Quentel, F.

2006-04-01

Very short range (VSR) high bit rate optical fiber communications are an emerging market dedicated to local area networks, digital displays or board to board interconnects within real time calculators. In this technology, a very fast way to exchange data with high noise immunity and low-cost is needed. Optical multimode graded index fibers are used here because they have electrical noise immunity and are easier to handle than monomode fibers. 850 nm VCSEL are used in VSR communications because of their low cost, direct on-wafer tests, and the possibility of manufacturing VCSEL arrays very easily compared to classical optical transceivers using edge-emitting laser diodes. Although much research has been carried out in temperature modeling on VCSEL emitters, few studies have been devoted to characterizations over a very broad range of temperatures. Nowadays, VCSEL VSR communications tend to be used in severe environments such as space, avionics and military equipments. Therefore, a simple way to characterize VCSEL emitters over a broad range of temperature is required. In this paper, we propose a complete characterization of the emitter part of 2.5 Gb/s opto-electrical transceiver modules operating from -40°C to +120°C using 850 nm VCSELs. Our method uses simple and semi-automatic measurements of a given set of chosen device parameters in order to make fast and efficient simulations.

New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

NASA Astrophysics Data System (ADS)

Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M. V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M.

2018-06-01

This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual ID-VDS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage VTH and low supply voltage VDD.

Multifield Control of Domains in a Room-Temperature Multiferroic 0.85BiTi0.1Fe0.8Mg0.1O3-0.15CaTiO3 Thin Film.

PubMed

Jia, Tingting; Fan, Ziran; Yao, Junxiang; Liu, Cong; Li, Yuhao; Yu, Junxi; Fu, Bi; Zhao, Hongyang; Osada, Minoru; Esfahani, Ehsan Nasr; Yang, Yaodong; Wang, Yuanxu; Li, Jiang-Yu; Kimura, Hideo; Cheng, Zhenxiang

2018-06-20

Single-phase materials that combine electric polarization and magnetization are promising for applications in multifunctional sensors, information storage, spintronic devices, etc. Following the idea of a percolating network of magnetic ions (e.g., Fe) with strong superexchange interactions within a structural scaffold with a polar lattice, a solid solution thin film with perovskite structure at a morphotropic phase boundary with a high level of Fe atoms on the B site of perovskite structure is deposited to combine both ferroelectric and ferromagnetic ordering at room temperature with magnetoelectric coupling. In this work, a 0.85BiTi 0.1 Fe 0.8 Mg 0.1 O 3 -0.15CaTiO 3 thin film has been deposited by pulsed laser deposition (PLD). Both the ferroelectricity and the magnetism were characterized at room temperature. Large polarization and a large piezoelectric effective coefficient d 33 were obtained. Multifield coupling of the thin film has been characterized by scanning force microscopy. Ferroelectric domains and magnetic domains could be switched by magnetic field ( H), electric field ( E), mechanical force ( F), and, indicating that complex cross-coupling exists among the electric polarization, magnetic ordering and elastic deformation in 0.85BiTi 0.1 F e0.8 Mg 0.1 O 3 -0.15CaTiO 3 thin film at room temperature. This work also shows the possibility of writing information with electric field, magnetic field, and mechanical force and then reading data by magnetic field. We expect that this work will benefit information applications.

Preparation, Structural and Dielectric Properties of Solution Grown Polyvinyl Alcohol(PVA) Film

NASA Astrophysics Data System (ADS)

Nangia, Rakhi; Shukla, Neeraj K.; Sharma, Ambika

2017-08-01

Flexible dielectrics with high permittivity have been investigated extensively due to their applications in electronic industry. In this work, structural and electrical characteristics of polymer based film have been analysed. Poly vinyl alcohol (PVA) film was prepared by solution casting method. X-ray diffraction (XRD) characterization technique is used to investigate the structural properties. The semi-crystalline nature has been determined by the analysis of the obtained XRD pattern. Electrical properties of the synthesized film have been analysed from the C-V and I-V curves obtained at various frequencies and temperatures. Low conductivity values confirm the insulating behaviour of the film. However, it is found that conductivity increases with temperature. Also, the dielectric permittivity is found to be higher at lower frequencies and higher temperatures, that proves PVA to be an excellent dielectric material which can be used in interface electronics. Dielectric behaviour of the film has been explained based on dipole orientations to slow and fast varying electric field. However further engineering can be done to modulate the structural, electrical properties of the film.

Effect of Impedance Relaxation in Conductance Mechanisms in TiO2/ITO/ZnO:Al/p-Si Heterostructure

NASA Astrophysics Data System (ADS)

Nouiri, M.; El Mir, L.

2018-03-01

The electrical conduction of a TiO2/ITO/ZnO:Al/p-Si structure under alternating-current excitation was investigated in the temperature range of 80 K to 300 K. The frequency dependence of the capacitance and conductance revealed the response of a thermally activated trap characterized by activation energy of about 140 meV. The frequency dependence of the conductance obeyed the universal dynamic response according to the common relation G = Aωs . The temperature dependence of the frequency exponent s illustrates that, in the low frequency range, conduction is governed by the correlated barrier hopping (CBH) mechanism involving two distinct energy levels for all investigated temperatures. For the high frequency region, conduction takes place according to the overlapping large-polaron tunneling mechanism at low temperatures but the CBH mechanism becomes dominant in the high temperature region. This difference in electrical behavior between low and high temperatures can be attributed to the dominance of dielectric relaxation at low compared with high temperatures.

Nature of Dielectric Properties, Electric Modulus and AC Electrical Conductivity of Nanocrystalline ZnIn2Se4 Thin Films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.

2018-02-01

The structural characteristics of thermally deposited ZnIn2Se4 thin films were indexed utilizing x-ray diffraction as well as scanning electron microscopy techniques. Dielectric properties, electric modulus and AC electrical conductivity of ZnIn2Se4 thin films were examined in the frequency range from 42 Hz to 106 Hz. The capacitance, conductance and impedance were measured at different temperatures. The dielectric constant and dielectric loss decrease with an increase in frequency. The maximum barrier height was determined from the analysis of the dielectric loss depending on the Giuntini model. The real part of the electric modulus revealed a constant maximum value at higher frequencies and the imaginary part of the electric modulus was characterized by the appearance of dielectric relaxation peaks. The AC electrical conductivity obeyed the Jonscher universal power law. Correlated barrier hopping model was the appropriate mechanism for AC conduction in ZnIn2Se4 thin films. Estimation of the density of states at the Fermi level and activation energy, for AC conduction, was carried out based on the temperature dependence of AC electrical conductivity.

Preliminary low temperature electron irradiation of triple junction solar cells

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Mueller, Robert L.; Scrivner, Roy L.; Helizon, Roger S.

2005-01-01

JPL has routinely performed radiation testing on commercial solar cells and has also performed LILT testing to characterize cell performance under far sun operating conditions. This research activity was intended to combine the features of both capabilities to investigate the possibility of any room temperature annealing that might influence the measured radiation damage. Although it was not possible to maintain the test cells at a constant low temperature between irradiation and electrical measurements, it was possible to obtain measurements with the cell temperature kept well below room temperature.

Temperature dependence of gas sensing behaviour of TiO2 doped PANI composite thin films

NASA Astrophysics Data System (ADS)

Srivastava, Subodh; Sharma, S. S.; Sharma, Preetam; Sharma, Vinay; Rajura, Rajveer Singh; Singh, M.; Vijay, Y. K.

2014-04-01

In the present work we have reported the effect of temperature on the gas sensing properties of TiO2 doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and TiO2 doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline at low temperature. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature TiO2 doped PANI composite sensor shows higher response value and showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.

Electrical transport in AZO nanorods

NASA Astrophysics Data System (ADS)

Yildiz, A.; Cansizoglu, H.; Karabacak, T.

2015-10-01

Al-doped ZnO (AZO) nanorods (NRs) with different lengths were deposited by utilizing glancing angle deposition (GLAD) technique in a DC sputter system at room temperature. The structural and optical characteristics of the NRs were investigated by the X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-vis-NIR spectroscopy measurements. A band gap of about 3.5 eV was observed for the NRs. A novel capping process utilizing varying deposition angles was used to introduce a blanket metal top contact for the electrical characterization of NRs. Current-voltage (I-V) measurements were used to properly evaluate the approximate resistivity of a single NR. The electrical conduction was found to be governed by the thermally activated transport mechanism. Activation energy was determined as 0.14 eV from temperature dependent resistivity data.

Evolution of Structural and Electrical Properties of Carbon Films from Amorphous Carbon to Nanocrystalline Graphene on Quartz Glass by HFCVD.

PubMed

Zhai, Zihao; Shen, Honglie; Chen, Jieyi; Li, Xuemei; Jiang, Ye

2018-05-23

Direct growth of graphene films on glass is of great importance but has so far met with limited success. The noncatalytic property of glass results in the low decomposition ability of hydrocarbon precursors, especially at reduced temperatures (<1000 °C), and therefore amorphous carbon (a-C) films are more likely to be obtained. Here, we report the hydrogen influence on the structural and electrical properties of carbon films deposited on quartz glass at 850 °C by hot-filament chemical vapor deposition (HFCVD). The results revealed that the obtained a-C films were all graphitelike carbon films. Structural transition of the deposited films from a-C to nanocrystalline graphene was achieved by raising the hydrogen dilution ratios from 10 to over 80%. On the basis of systematic structural and chemical characterizations, a schematic process with three steps including sp 2 chain aggregation, aromatic ring formation, and sp 3 bond etching was proposed to interpret the structural evolution. The nanocrystalline graphene films grown on glass by HFCVD exhibited good electrical performance with a carrier mobility of 36.76 cm 2 /(V s) and a resistivity of 5.24 × 10 -3 Ω cm over an area of 1 cm 2 . Temperature-dependent electrical characterizations revealed that the electronic transport in carbon films was dominated by defect, localized, and extended states, respectively, when increasing the temperature from 75 to 292 K. The nanocrystalline graphene films presented higher carrier mobility and lower carrier concentration than those of a-C films, which was mainly attributed to their smaller conductive activation energy. The present investigation provides an effective way for direct growth of graphene films on glass at reduced temperatures and also offers useful insights into the understanding of structural and electrical relationship between a-C and graphene.

High-Temperature-Superconductor Films In Microwave Circuits

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Warner, J. D.; Romanofsky, R. R.; Heinen, V. O.; Chorey, C. M.

1993-01-01

Report discusses recent developments in continuing research on fabrication and characterization of thin films of high-temperature superconducting material and incorporation of such films into microwave circuits. Research motivated by prospect of exploiting superconductivity to reduce electrical losses and thereby enhancing performance of such critical microwave components as ring resonators, filters, transmission lines, phase shifters, and feed lines in phased-array antennas.

Electrical and galvanomagnetic properties of biocarbon preforms of white pine wood

NASA Astrophysics Data System (ADS)

Popov, V. V.; Orlova, T. S.; Ramirez-Rico, J.

2009-11-01

The electrical and galvanomagnetic properties of high-porosity biocarbon preforms prepared from white pine wood by pyrolysis at carbonization temperatures T carb = 1000 and 2400°C have been studied. Measurements have been made of the behavior with temperature of the electrical resistivity, as well as of magnetoresistance and the Hall coefficient in the 1.8-300-K temperature interval and magnetic fields of up to 28 kOe. It has been shown that samples of both types (with T carb = 1000 and 2400°C) are characterized by high carrier (hole) concentrations of 6.3 × 1020 and 3.6 × 1020 cm-3, respectively. While these figures approach the metallic concentration, the electrical resistivity of the biocarbon materials studied, unlike that of normal metals, grows with decreasing temperature. Increasing T carb brings about a decrease in electrical resistivity by a factor 1.5-2 within the 1.8-300-K temperature range. The magnetoresistance also follows a qualitatively different pattern at low (1.8-4.2 K) temperatures: it is negative for T carb = 2400°C and positive for T carb = 1000°C. An analysis of experimental data has revealed that the specific features in the conductivity and magnetoresistance of these samples are described by quantum corrections associated inherently with structural characteristics of the biocarbon samples studied, more specifically with the difference between the fractions of the quasi-amorphous and nanocrystalline phases, as well as with the fine structure of the latter phase forming at the two different T carb.

Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Pellegrini, G.; Godignon, P.; Quirion, D.; Hidalgo, S.; Matilla, O.; Fontserè, A.; Molas, B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Pothin, D.; Fajardo, P.

2018-01-01

Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines, as well as other astronomy and space applications. Owing to their lower susceptibility to variable temperature and illumination conditions, there is also special interest in silicon carbide devices for some of these applications. Moreover, radiation hardness of the involved technologies is a major concern for high-energy physics and space applications. This work presents four-quadrant photodiodes produced on ultrathin (10 μm) and bulk Si, as well as on SiC epilayer substrates. An extensive electrical characterization has been carried out by using current-voltage (I-V) and capacitance-voltage (C-V) techniques. The impact of different temperature (from -50oC to 175oC) and visible light conditions on the electrical characteristics of the devices has been evaluated. Radiation effects caused by 2 MeV electron irradiation up to 1×1014, 1×1015 and 1×1016 e/cm2 fluences have been studied. Special attention has been devoted to the study of charge build-up in diode interquadrant isolation, as well as its impact on interquadrant resistance. The study of these electrical properties and its radiation-induced degradation should be taken into account for device applications.

Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith Roger D.; Ferrier, Terry L.; Krasowski, Michael J.;

Non-Contact Thermal Characterization of NASA's HERMeS Hall Thruster

NASA Technical Reports Server (NTRS)

Huang, Wensheng; Kamhawi, Hani; Myers, James L.; Yim, John T.; Neff, Gregory

2015-01-01

The thermal characterization test of NASA's 12.5-kW Hall Effect Rocket with Magnetic Shielding has been completed. This thruster was developed to support a number of potential Solar Electric Propulsion Technology Demonstration Mission concepts, including the Asteroid Redirect Robotic Mission concept. As a part of the preparation for this characterization test, an infrared-based, non-contact thermal imaging system was developed to measure the temperature of various thruster surfaces that are exposed to high voltage or plasma. An in-situ calibration array was incorporated into the setup to improve the accuracy of the temperature measurement. The key design parameters for the calibration array were determined in a separate pilot test. The raw data from the characterization test was analyzed though further work is needed to obtain accurate anode temperatures. Examination of the front pole and discharge channel temperatures showed that the thruster temperature was driven more by discharge voltage than by discharge power. Operation at lower discharge voltages also yielded more uniform temperature distributions than at higher discharge voltages. When operating at high discharge voltage, increasing the magnetic field strength appeared to have made the thermal loading azimuthally more uniform.

Low-Field and High-Field Characterization of THUNDER Actuators

NASA Technical Reports Server (NTRS)

Ounaies, Z.; Mossi, K.; Smith, R.; Bernd, J.; Bushnell, Dennis M. (Technical Monitor)

2001-01-01

THUNDER (THin UNimorph DrivER) actuators are pre-stressed piezoelectric devices developed at NASA Langley Research Center (LaRC) that exhibit enhanced strain capabilities. As a result, they are of interest in a variety of aerospace applications. Characterization of their performance as a function of electric field, temperature and frequency is needed in order to optimize their operation. Towards that end, a number of THUNDER devices were obtained from FACE International Co. with a stainless steel substrate varying in thickness from 1 mil to 20 mils. The various devices were evaluated to determine low-field and high-field displacement its well as the polarization hysteresis loops. The thermal stability of these drivers was evaluated by two different methods. First, the samples were thermally cycled under electric field by systematically increasing the maximum temperature from 25 C to 200 C while the displacement was being measured. Second, the samples were isothermally aged at 0 C, 50 C, 100 C. and 150 C in air, and the isothermal decay of the displacement was measured at room temperature as a function of time.

Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures

NASA Astrophysics Data System (ADS)

Wang, S.; Mirkhani, V.; Yapabandara, K.; Cheng, R.; Hernandez, G.; Khanal, M. P.; Sultan, M. S.; Uprety, S.; Shen, L.; Zou, S.; Xu, P.; Ellis, C. D.; Sellers, J. A.; Hamilton, M. C.; Niu, G.; Sk, M. H.; Park, M.

2018-04-01

We report on the fabrication and electrical characterization of bottom gate thin-film transistors (TFTs) based on a sol-gel derived ZnO channel layer. The effect of annealing of ZnO active channel layers on the electrical characteristics of the ZnO TFTs was systematically investigated. Photoluminescence (PL) spectra indicate that the crystal quality of the ZnO improves with increasing annealing temperature. Both the device turn-on voltage (Von) and threshold voltage (VT) shift to a positive voltage with increasing annealing temperature. As the annealing temperature is increased, both the subthreshold slope and the interfacial defect density (Dit) decrease. The field effect mobility (μFET) increases with annealing temperature, peaking at 800 °C and decreases upon further temperature increase. An improvement in transfer and output characteristics was observed with increasing annealing temperature. However, when the annealing temperature reaches 900 °C, the TFTs demonstrate a large degradation in both transfer and output characteristics, which is possibly produced by non-continuous coverage of the film. By using the temperature-dependent field effect measurements, the localized sub-gap density of states (DOSs) for ZnO TFTs with different annealing temperatures were determined. The DOSs for the subthreshold regime decrease with increasing annealing temperature from 600 °C to 800 °C and no substantial change was observed with further temperature increase to 900 °C.

Lattice Matched Iii-V IV Semiconductor Heterostructures: Metalorganic Chemical Vapor Deposition and Remote Plasma Enhanced Chemical Vapor Deposition.

NASA Astrophysics Data System (ADS)

Choi, Sungwoo

1992-01-01

This thesis describes the growth and characterization of wide gap III-V compound semiconductors such as aluminum gallium arsenide (Al_{rm x} Ga_{rm 1-x}As), gallium nitride (GaN), and gallium phosphide (GaP), deposited by the metalorganic chemical vapor deposition (MOCVD) and remote plasma enhanced chemical vapor deposition (Remote PECVD). In the first part of the thesis, the optimization of GaAs and Al_{rm x}Ga _{rm 1-x}As hetero -epitaxial layers on Ge substrates is described in the context of the application in the construction of cascade solar cells. The emphasis on this study is on the trade-offs in the choice of the temperature related to increasing interdiffusion/autodoping and increasing perfection of the epilayer with increasing temperature. The structural, chemical, optical, and electrical properties of the heterostructures are characterized by x-ray rocking curve measurement, scanning electron microscopy (SEM), electron beam induced current (EBIC), cross-sectional transmission electron microscopy (X-TEM), Raman spectroscopy, secondary ion mass spectrometry (SIMS), and steady-state and time-resolved photoluminescence (PL). Based on the results of this work the optimum growth temperature is 720^circC. The second part of the thesis describes the growth of GaN and GaP layers on silicon and sapphire substrates and the homoepitaxy of GaP by remote PECVD. I have designed and built an ultra high vacuum (UHV) deposition system which includes: the gas supply system, the pumping system, the deposition chamber, the load-lock chamber, and the waste disposal system. The work on the deposition of GaN on Si and sapphire focuses onto the understanding of the growth kinetics. In addition, Auger electron spectroscopy (AES) for surface analysis, x-ray diffraction methods and microscopic analyses using SEM and TEM for structural characterization, infrared (IR) and ultraviolet (UV) absorption measurements for optical characterization, and electrical characterization results on the GaN films are presented. In the deposition GaP thin films by remote PECVD, trimethylgallium and in-situ generated phosphine precursors are employed as source gases which permits homo- and heteroepitaxial growth as substrate temperature of 590-620^ circC. Also, the growth kinetics of gallium phosphide is discussed. As in the case of GaN, the surface, structural, chemical, optical, and electrical properties are characterized and the results are discussed.

Power management and distribution technology

NASA Astrophysics Data System (ADS)

Dickman, John Ellis

Power management and distribution (PMAD) technology is discussed in the context of developing working systems for a piloted Mars nuclear electric propulsion (NEP) vehicle. The discussion is presented in vugraph form. The following topics are covered: applications and systems definitions; high performance components; the Civilian Space Technology Initiative (CSTI) high capacity power program; fiber optic sensors for power diagnostics; high temperature power electronics; 200 C baseplate electronics; high temperature component characterization; a high temperature coaxial transformer; and a silicon carbide mosfet.

Power management and distribution technology

NASA Technical Reports Server (NTRS)

Dickman, John Ellis

1993-01-01

Power management and distribution (PMAD) technology is discussed in the context of developing working systems for a piloted Mars nuclear electric propulsion (NEP) vehicle. The discussion is presented in vugraph form. The following topics are covered: applications and systems definitions; high performance components; the Civilian Space Technology Initiative (CSTI) high capacity power program; fiber optic sensors for power diagnostics; high temperature power electronics; 200 C baseplate electronics; high temperature component characterization; a high temperature coaxial transformer; and a silicon carbide mosfet.

Annealing effect on the structural and dielectric properties of hematite nanoparticles

NASA Astrophysics Data System (ADS)

Kumar, Vijay; Chahal, Surjeet; Singh, Dharamvir; Kumar, Ashok; Kumar, Parmod; Asokan, K.

2018-05-01

In the present work, we have synthesized hematite (α-Fe2O3) nanoparticles by sol-gel method and sintered them at different temperatures (200 °C, 400 °C and 800 °C for six hours). The samples were then characterized using versatile characterization techniques such as X-ray diffraction (XRD), dielectric measurement and temperature dependent resistivity (RT) for their structural, dielectric and electrical properties. XRD measurements infer that intensity of peak increases with an increase in temperature resulting an increase in crystallite size. Temperature dependent resistivity also shows decrease in the resistivity of the samples. Furthermore, the dielectric measurements correspond to the increase in the dielectric constant. Based on these observations, it can be inferred that sintering temperature plays an important role in tailoring the various physical properties of hematite nanoparticles.

PID temperature controller in pig nursery: spatial characterization of thermal environment

NASA Astrophysics Data System (ADS)

de Souza Granja Barros, Juliana; Rossi, Luiz Antonio; Menezes de Souza, Zigomar

2018-05-01

The use of enhanced technologies of temperature control can improve the thermal conditions in environments of livestock facilities. The objective of this study was to evaluate the spatial distribution of the thermal environment variables in a pig nursery with a heating system with two temperature control technologies based on the geostatistical analysis. The following systems were evaluated: overhead electrical resistance with Proportional, Integral, and Derivative (PID) controller and overhead electrical resistance with a thermostat. We evaluated the climatic variables: dry bulb temperature (Tbs), air relative humidity (RH), temperature and humidity index (THI), and enthalpy in the winter, at 7:00, 12:00, and 18:00 h. The spatial distribution of these variables was mapped by kriging. The results showed that the resistance heating system with PID controllers improved the thermal comfort conditions in the pig nursery in the coldest hours, maintaining the spatial distribution of the air temperature more homogeneous in the pen. During the hottest weather, neither system provided comfort.

PID temperature controller in pig nursery: spatial characterization of thermal environment

NASA Astrophysics Data System (ADS)

de Souza Granja Barros, Juliana; Rossi, Luiz Antonio; Menezes de Souza, Zigomar

2017-11-01

The use of enhanced technologies of temperature control can improve the thermal conditions in environments of livestock facilities. The objective of this study was to evaluate the spatial distribution of the thermal environment variables in a pig nursery with a heating system with two temperature control technologies based on the geostatistical analysis. The following systems were evaluated: overhead electrical resistance with Proportional, Integral, and Derivative (PID) controller and overhead electrical resistance with a thermostat. We evaluated the climatic variables: dry bulb temperature (Tbs), air relative humidity (RH), temperature and humidity index (THI), and enthalpy in the winter, at 7:00, 12:00, and 18:00 h. The spatial distribution of these variables was mapped by kriging. The results showed that the resistance heating system with PID controllers improved the thermal comfort conditions in the pig nursery in the coldest hours, maintaining the spatial distribution of the air temperature more homogeneous in the pen. During the hottest weather, neither system provided comfort.

Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Utama, M. Iqbal Bakti; Lu, Xin; Zhan, Da; Ha, Son Tung; Yuan, Yanwen; Shen, Zexiang; Xiong, Qihua

2014-10-01

Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate interpretation of the electrical characterization results from the sample. An electrical transport study, enabled by the SU-8 patterning, showed a variable range hopping behavior at high temperatures.Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate interpretation of the electrical characterization results from the sample. An electrical transport study, enabled by the SU-8 patterning, showed a variable range hopping behavior at high temperatures. Electronic supplementary information (ESI) available: Further experiments on patterning and additional electrical characterizations data. See DOI: 10.1039/c4nr03817g

Room temperature magnetoelectric coupling and electrical properties of Ni doped Co - ferrite - PZT nanocomposites

NASA Astrophysics Data System (ADS)

Chakraborty, Sarit; Mandal, S. K.; Dey, P.; Saha, B.

2018-04-01

Multiferroic magnetoelectric materials are very interesting for the researcher for the potential application in device preparation. We have prepared 0.3Ni0.5Co0.5Fe2O4 - 0.7PbZr0.58Ti0.42O3 magnetoelectric nanocomposites through chemical pyrophoric reaction process followed by solid state reaction and represented magnetoelectric coupling coefficient, thermally and magnetically tunable AC electrical properties. For the structural characterization XRD pattern and SEM micrograph have been analyzed. AC electrical properties reveal that the grain boundaries resistances are played dominating role in the conduction process in the system. Dielectric studies are represents that the dielectric polarization is decreased with frequency as well as magnetic field where it increases with increasing temperature. The dielectric profiles also represents the electromechanical resonance at a frequency of ˜183 kHz. High dielectric constant and low dielectric loss at room temperature makes the material very promising for the application of magnetic field sensor devices.

Solar Cell Polymer Based Active Ingredients PPV and PCBM

NASA Astrophysics Data System (ADS)

Hardeli, H.; Sanjaya, H.; Resikarnila, R.; Nitami H, R.

2018-04-01

A polymer solar cell is a solar cell based on a polymer bulk heterojunction structure using the method of thin film, which can convert solar energy into electrical energy. Absorption of light is carried by active material layer PPV: PCBM. This study aims to make solar cells tandem and know the value of converting solar energy into electrical energy and increase the value of efficiency generated through morphological control, ie annealing temperature and the ratio of active layer mixture. The active layer is positioned above the PEDOT:PSS layer on ITO glass substrate. The characterization results show the surface morphology of the PPV:PCBM active layer is quite evenly at annealing temperature of 165 ° C. The result of conversion of electrical energy with a UV light source in annealing samples with temperature 165 ° C is 0.03 mA and voltage of 4.085 V with an efficiency of 2.61% and mixed ratio variation was obtained in comparison of P3HT: PCBM is 1: 3

Electrical Investigation of Metal-Olivine Systems and Application to the Deep Interior of Mercury

NASA Astrophysics Data System (ADS)

Zhang, Z.; Pommier, A.

2017-12-01

Transfers of mass, heat, and electric currents between a silicate mantle and an underlying metallic core characterize the Core-Mantle Boundary (CMB) region of terrestrial planets. In particular, constraining the structure and chemistry of the CMB region of Mercury is crucial to understand its thermal state and unique magnetic activity. To probe the physical and chemical processes of the Hermean CMB, we conducted an electrical study of metal-olivine systems at pressure, temperature, and chemistry conditions relevant to the mantle and CMB region of Mercury. Electrical measurements were performed at 5-7 GPa and up to 1675ºC during heating and cooling in the multi-anvil apparatus using impedance spectroscopy. Samples are made of one metal layer (Fe, FeS, FeSi2, or Fe-Ni-S-Si systems) and one polycrystalline olivine (Fo90) layer, with the metal:olivine ratio ranging from 1:0.7 to 1:9.2. For all samples, we observe that bulk electrical conductivity increases with temperature from 10-2.5 to 101.8 S/m, which is higher than the conductivity of polycrystalline olivine but lower than the one of the metal phase at similar conditions. In some experiments, a conductivity jump is observed at a temperature corresponding to the melting temperature of the metal phase. This conductivity increase cannot be explained by the electrical properties of liquid metal as metal is less conductive with increasing temperature. We observe that both the metal:olivine ratio and the change in metal phase geometry during heating best explain the bulk conductivity. By combining our electrical results, textural analyses of the samples and previous experimental and numerical works, we propose an electrical profile of the deep interior of Mercury. Comparison of our model with existing conductivity estimates of Mercury's lowermost mantle and CMB from magnetic field observations and thermodynamic calculations supports the hypothesis of a layered CMB-outermost core structure in present-day Mercury.

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.

PubMed

Sharma, Deepak; Amani, Matin; Motayed, Abhishek; Shah, Pankaj B; Birdwell, A Glen; Najmaei, Sina; Ajayan, Pulickel M; Lou, Jun; Dubey, Madan; Li, Qiliang; Davydov, Albert V

2014-04-18

We have studied temperature-dependent (77-300 K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single-layer molybdenum disulfide (MoS2) based back-gated field-effect transistors (FETs). Electrical characterization and LFN measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the electrical characteristics of the device. Significant decrease in channel current and transconductance was observed in these devices after the Al2O3 passivation etching. For passivated devices, the two-terminal resistance variation with temperature showed a good fit to the activation energy model, whereas for the etched devices the trend indicated a hopping transport mechanism. A significant increase in the normalized drain current noise power spectral density (PSD) was observed after the etching of the top passivation layer. The observed channel current noise was explained using a standard unified model incorporating carrier number fluctuation and correlated surface mobility fluctuation mechanisms. Detailed analysis of the gate-referred noise voltage PSD indicated the presence of different trapping states in passivated devices when compared to the etched devices. Etched devices showed weak temperature dependence of the channel current noise, whereas passivated devices exhibited near-linear temperature dependence.

Determination of electrical properties of degraded mixed ionic conductors: Impedance studies with applied dc voltage

NASA Astrophysics Data System (ADS)

Bayer, T. J. M.; Carter, J. J.; Wang, Jian-Jun; Klein, Andreas; Chen, Long-Qing; Randall, C. A.

2017-12-01

Under electrical bias, mixed ionic conductors such as SrTiO3 are characterized by oxygen vacancy migration which leads to resistance degradation. The defect chemistry to describe the relationship between conductivity and oxygen vacancies is usually obtained by high temperature conductivity data or quenching experiments. These techniques can investigate the equilibrated state only. Here, we introduce a new approach using in-situ impedance studies with applied dc voltage to analyze the temperature dependent electrical properties of degraded SrTiO3 single crystals. This procedure is most beneficial since it includes electric field driven effects. The benefits of the approach are highlighted by comparing acceptor doped and undoped SrTiO3. This approach allows the determination of the temperature activation of both anodic and cathodic conductivity of Fe-doped SrTiO3 in the degraded state. The anodic activation energy matches well with the published results, while the activation energy of the degraded cathode region reported here is not in agreement with earlier assumptions. The specific discrepancies of the experimental data and the published defect chemistry are discussed, and a defect chemistry model that includes the strong temperature dependence of the electron conductivity in the cathode region is proposed.

Monitoring and Control of an Adsorption System Using Electrical Properties of the Adsorbent for Organic Compound Abatement.

PubMed

Hu, Ming-Ming; Emamipour, Hamidreza; Johnsen, David L; Rood, Mark J; Song, Linhua; Zhang, Zailong

2017-07-05

Adsorption systems typically need gas and temperature sensors to monitor their adsorption/regeneration cycles to separate gases from gas streams. Activated carbon fiber cloth (ACFC)-electrothermal swing adsorption (ESA) is an adsorption system that has the potential to be controlled with the electrical properties of the adsorbent and is studied here to monitor and control the adsorption/regeneration cycles without the use of gas and temperature sensors and to predict breakthrough before it occurs. The ACFC's electrical resistance was characterized on the basis of the amount of adsorbed organic gas/vapor and the adsorbent temperature. These relationships were then used to develop control logic to monitor and control ESA cycles on the basis of measured resistance and applied power values. Continuous sets of adsorption and regeneration cycles were performed sequentially entirely on the basis of remote electrical measurements and achieved ≥95% capture efficiency at inlet concentrations of 2000 and 4000 ppm v for isobutane, acetone, and toluene in dry and elevated relative humidity gas streams, demonstrating a novel cyclic ESA system that does not require gas or temperature sensors. This contribution is important because it reduces the cost and simplifies the system, predicts breakthrough before its occurrence, and reduces emissions to the atmosphere.

Performance of the Lester battery charger in electric vehicles

NASA Technical Reports Server (NTRS)

Vivian, H. C.; Bryant, J. A.

1984-01-01

Tests are performed on an improved battery charger. The primary purpose of the testing is to develop test methodologies for battery charger evaluation. Tests are developed to characterize the charger in terms of its charge algorithm and to assess the effects of battery initial state of charge and temperature on charger and battery efficiency. Tests show this charger to be a considerable improvement in the state of the art for electric vehicle chargers.

Development of a process for high capacity arc heater production of silicon for solar arrays

NASA Technical Reports Server (NTRS)

Meyer, T. N.

1980-01-01

A high temperature silicon production process using existing electric arc heater technology is discussed. Silicon tetrachloride and a reductant, liquid sodium, were injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction occurred, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon were developed. The desired degree of separation was not achieved. The electrical, control and instrumentation, cooling water, gas, SiCl4, and sodium systems are discussed. The plasma reactor, silicon collection, effluent disposal, the gas burnoff stack, and decontamination and safety are also discussed. Procedure manuals, shakedown testing, data acquisition and analysis, product characterization, disassembly and decontamination, and component evaluation are reviewed.

Electrical properties of multilayer (DLC-TiC) films produced by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Alawajji, Raad A.; Kannarpady, Ganesh K.; Nima, Zeid A.; Kelly, Nigel; Watanabe, Fumiya; Biris, Alexandru S.

2018-04-01

In this work, pulsed laser deposition was used to produce a multilayer diamond like carbon (ML (DLC-TiC)) thin film. The ML (DLC-TiC) films were deposited on Si (100) and glass substrates at various substrate temperatures in the range of 20-450 °C. Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and atomic force microscopy were utilized to characterize the prepared films. Raman analysis revealed that as the substrate temperature increased, the G-peak position shifted to a higher raman shift and the full width at half maximum of the G and D bands decreased. XPS analysis indicated a decrease in sp3/sp2 ratio and an increase in Ti-C bond intensity when the substrate temperature was increased. Additionally, the surface roughness of ML (DLC-TiC) filmswas affected by the type and temperature of the substrate. The electrical measurement results indicated that the electrical resistivity of the ML (DLC-TiC) film deposited on Si and glass substrates showed the same behavior-the resistivity decreased when substrate temperature increased. Furthermore, the ML (DLC-TiC) films deposited on silicon showed lower electrical resistivity, dropping from 8.39E-4 Ω-cm to 5.00E-4 Ω-cm, and, similarly, the films on the glass substrate displayed a drop in electrical resistivity from 1.8E-2 Ω-cm to 1.2E-3 Ω-cm. These enhanced electrical properties indicate that the ML (DLC-TiC) films have widespread potential as transducers for biosensors in biological research; electrochemical electrodes, because these films can be chemically modified; biocompatible coatings for medicals tools; and more.

Electrical conductivity enhancement in heterogeneously doped scandia-stabilized zirconia

NASA Astrophysics Data System (ADS)

Varanasi, Chakrapani; Juneja, Chetan; Chen, Christina; Kumar, Binod

Composites of 6 mol% scandia-stabilized zirconia materials (6ScSZ) and nanosize Al 2O 3 powder (0-30 wt.%) were prepared and characterized for electrical conductivity by the ac impedance method at various temperatures ranging from 300 to 950 °C. All the composites characterized showed improved conductivity at higher temperatures compared to the undoped ScSZ. An average conductivity of 0.12 S cm -1 was measured at 850 °C for 6ScSZ + 30 wt.% Al 2O 3 composite samples, an increase in conductivity up to 20% compared to the undoped 6ScSZ specimen at this temperature. Microstructural evaluation using scanning electron microscopy revealed that the ScSZ grain size was relatively unchanged up to 10 wt.% of Al 2O 3 additions. However, the grain size was reduced in samples with higher (20 and 30 wt.%) additions of Al 2O 3. Small grain size, reduced quantity of the 6ScSZ material (only 70%), and improved conductivity makes these ScSZ + 30 wt.% Al 2O 3 composites very attractive as electrolyte materials in view of their collective mechanical and electrical properties and cost requirements. The observed increase in conductivity values with the additions of an insulating Al 2O 3 phase is explained in light of the space charge regions at the 6ScSZ-Al 2O 3 grain boundaries.

Systems Characterization of Temperature, Ph and Electrical Conductivity in Aerobic Biodegradation of Wheat Biomass at Differing Mixing Rates

NASA Technical Reports Server (NTRS)

Calhoun, M.; Trotman, A.; Aglan, H.

1998-01-01

The purpose of this preliminary study is to observe and relate the rate of mixing to pH and electrical conductivity in an aerobic, continuously stirred bioreactor. The objective is to use data collected from successive experiments as a means of a system characterization. Tests were conducted to obtain these data using a continuously stirred 20 L Cytostir glass reaction vessel as a bioreactor operated without built-in temperature or pH control. The tests were conducted on the lab bench at ambient temperatures. The substrate in the bioreactor was ground wheat biomass obtained from the Biomass Production Chamber at NASA Kennedy Space Center. In this study, the data reflect characteristics of the native (uninoculated) systems as well as inoculated systems. In the native systems, it was found that pi levels became stable after approximately 2 to 3 days. The electrical conductivity levels for the native systems tended to decrease over time. In contrast, ion activity was increased after the introduction of bacteria into the system. This could be correlated with the release of nutrients, due to the activity of the bacteria. Also, there were slight increases in pH in the inoculated system, a result which is expected for a system with no active pr controls. The data will be used to test a mathematical model in an automated system.

Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al2O3 single crystal implanted with Mg ions

NASA Astrophysics Data System (ADS)

Tardío, M.; Egaña, A.; Ramírez, R.; Muñoz-Santiuste, J. E.; Alves, E.

2016-07-01

The electrical conductivity in α-Al2O3 single crystals implanted with Mg ions in two different crystalline orientations, parallel and perpendicular to c axis, was investigated. The samples were implanted at room temperature with energies of 50 and 100 keV and fluences of 1 × 1015, 5 × 1015 and 5 × 1016 ions/cm2. Optical characterization reveals slight differences in the absorption bands at 6.0 and 4.2 eV, attributed to F type centers and Mie scattering from Mg precipitates, respectively. DC electrical measurements using the four and two-point probe methods, between 295 and 490 K, were used to characterize the electrical conductivity of the implanted area (Meshakim and Tanabe, 2001). Measurements in this temperature range indicate that: (1) the electrical conductivity is thermally activated independently of crystallographic orientation, (2) resistance values in the implanted region decrease with fluence levels, and (3) the I-V characteristic of electrical contacts in samples with perpendicular c axis orientation is clearly ohmic, whereas contacts are blocking in samples with parallel c axis. When thin layers are sequentially removed from the implanted region by immersing the sample in a hot solution of nitric and fluorhydric acids the electrical resistance increases until reaching the values of non-implanted crystal (Jheeta et al., 2006). We conclude that the enhancement in conductivity observed in the implanted regions is related to the intrinsic defects created by the implantation rather than to the implanted Mg ions (da Silva et al., 2002; Tardío et al., 2001; Tardío et al., 2008).

Challenges in Characterizing Low-Temperature Regolith Properties

NASA Technical Reports Server (NTRS)

Swanger, Adam Michael; Mantovani, James G.

2014-01-01

The success or failure of in-situ resource utilization for planetary surface exploration--be it for scientific, colonization or commercialization purposes--relies heavily on the ability to design and implement systems which effectively process the associated regolith and exploit its benefits. In most cases this challenge necessarily includes the characterization of low-temperature (cryogenic) properties; as many celestial destinations of interest, such as the moon, Mars and asteroids, have little or no atmosphere to help sustain the consistently "high" surface temperatures seen on planets such as Earth, and therefore can experience permanent cryogenic temperatures or dramatic cyclical changes. Characterization of physical properties (such as specific heat, thermal and electrical conductivity, etc.) over the entire temperature profile is undoubtedly an important piece of the puzzle; however, the impact on mechanical properties due to the introduction of icy deposit must also be explored in order to devise effective and robust excavation technologies. Currently the Granular Mechanics and Regolith Operations Lab and the Cryogenics Test Lab at NASA Kennedy Space Center are developing technologies and experimental methods to address these challenges and aid in the characterization of physical and mechanical properties of regolith at cryogenic temperatures. This presentation will review the current state of knowledge concerning lunar regolith at low temperature including that of icy regolith.

Synthesis and characterization of nickel oxide particulate annealed at different temperatures

NASA Astrophysics Data System (ADS)

Sharma, Khem Raj; Thakur, Shilpa; Negi, N. S.

2018-04-01

Nickel oxide has been synthesized by solution combustion technique. The nickel oxide ceramic was annealed at 600°C and 1000°C for 2 hours. Structural, electrical, dielectric and magnetic properties were analyzed which are strongly dependent upon the synthesis method. Structural properties were examined by X-ray diffractometer (XRD), which confirmed the purity and cubic phase of nickel oxide. XRD data reveals the increase in crystallite size and decrease in full width half maximum (FWHM) as the annealing temperature increases. Electrical conductivity is found to increase from 10-6 to 10-5 (Ω-1cm-1) after annealing. Dielectric constant is observed to increase from 26 to 175 when the annealing temperature is increased from 600°C to 1000°C. Low value of coercive field is found which shows weak ferromagnetic behavior of NiO. It is observed that all the properties of NiO particulate improve with increasing annealing temperature.

Electrical study on Carboxymethyl Cellulose-Polyvinyl alcohol based bio-polymer blend electrolytes

NASA Astrophysics Data System (ADS)

Saadiah, M. A.; Samsudin, A. S.

2018-04-01

The present work deals with the formulation of bio-materials namely carboxymethyl cellulose (CMC) and polyvinyl alcohol (PVA) for bio-polymer blend electrolytes (BBEs) system which was successfully carried out with different ratio of polymer blend. The biopolymer blend was prepared via economical & classical technique that is solution casting technique and was characterized by using impedance spectroscopy (EIS). The ionic conductivity was achieved to optimum value 9.12 x 10-6 S/cm at room temperature for sample containing ratio 80:20 of CMC:PVA. The highest conducting sample was found to obey the Arrhenius behaviour with a function of temperature. The electrical properties were analyzed using complex permittivity ε* and complex electrical modulus M* for BBEs system and it shows the non-Debye characteristics where no single relaxation time has observed.

Fabrication and electrical characterization of silicon nanowires based resistors

NASA Astrophysics Data System (ADS)

Ni, L.; Demami, F.; Rogel, R.; Salaün, A. C.; Pichon, L.

2009-11-01

Silicon nanowires (SiNWs) are synthesized via the Vapor-Liquid-Solid (VLS) mechanism using gold (Au) as metal catalyst and silane (SiH4) as precursor gas. Au nanoparticles are employed as liquid droplets catalysis during the SiNWs growth performed in a hot wall LPCVD reactor at 480°C and 40 Pa. SiNWs local synthesis at micron scale is demonstrated using classical optical photolithography process. SiNWs grow with high density anchored at the dedicated catalyst islands. This resulting network is used to interconnect two heavily doped polysilicon interdigitated electrodes leading to the formation of electrical resistors in a coplanar structure. Current-voltage (I-V) characteristics highlight a symmetric shape. The temperature dependence of the electrical resistance is activated, with activation energy of 0.47 eV at temperatures greater than 300K.

Dosimeter-Type NOx Sensing Properties of KMnO4 and Its Electrical Conductivity during Temperature Programmed Desorption

PubMed Central

Groβ, Andrea; Kremling, Michael; Marr, Isabella; Kubinski, David J.; Visser, Jacobus H.; Tuller, Harry L.; Moos, Ralf

2013-01-01

An impedimetric NOx dosimeter based on the NOx sorption material KMnO4 is proposed. In addition to its application as a low level NOx dosimeter, KMnO4 shows potential as a precious metal free lean NOx trap material (LNT) for NOx storage catalysts (NSC) enabling electrical in-situ diagnostics. With this dosimeter, low levels of NO and NO2 exposure can be detected electrically as instantaneous values at 380 °C by progressive NOx accumulation in the KMnO4 based sensitive layer. The linear NOx sensing characteristics are recovered periodically by heating to 650 °C or switching to rich atmospheres. Further insight into the NOx sorption-dependent conductivity of the KMnO4-based material is obtained by the novel eTPD method that combines electrical characterization with classical temperature programmed desorption (TPD). The NOx loading amount increases proportionally to the NOx exposure time at sorption temperature. The cumulated NOx exposure, as well as the corresponding NOx loading state, can be detected linearly by electrical means in two modes: (1) time-continuously during the sorption interval including NOx concentration information from the signal derivative or (2) during the short-term thermal NOx release. PMID:23549366

Numerical study of active control of mixing in electro-osmotic flows by temperature difference using lattice Boltzmann methods.

PubMed

Alizadeh, A; Wang, J K; Pooyan, S; Mirbozorgi, S A; Wang, M

2013-10-01

In this paper, the effect of temperature difference between inlet flow and walls on the electro-osmotic flow through a two-dimensional microchannel is investigated. The main objective is to study the effect of temperature variations on the distribution of ions and consequently internal electric potential field, electric body force, and velocity fields in an electro-osmotic flow. We assume constant temperature and zeta potential on walls and use the mean temperature of each cross section to characterize the Boltzmann ion distribution across the channel. Based on these assumptions, the multiphysical transports are still able to be described by the classical Poisson-Boltzmann model. In this work, the Navier-Stokes equation for fluid flow, the Poisson-Boltzmann equation for ion distribution, and the energy equation for heat transfer are solved by a couple lattice Boltzmann method. The modeling results indicate that the temperature difference between walls and the inlet solution may lead to two symmetrical vortices at the entrance region of the microchannel which is appropriate for mixing enhancements. The advantage of this phenomenon for active control of mixing in electro-osmotic flow is the manageability of the vortex scale without extra efforts. For instance, the effective domain of this pattern could broaden by the following modulations: decreasing the external electric potential field, decreasing the electric double layer thickness, or increasing the temperature difference between inlet flow and walls. This work may provide a novel strategy for design or optimization of microsystems. Copyright © 2013 Elsevier Inc. All rights reserved.

Effect of sintering on transparent TiO2 18NR-T type thin films as the working electrode for transparent solar cells

NASA Astrophysics Data System (ADS)

Supriyanto, A.; Nandani; Wahyuningsih, S.; Ramelan, A. H.

2018-03-01

The working electrode based on semiconductor transparent TiO2 type 18NR-T for transparent solar cells have been grown by screen printing method. This study aim is to determine the effect of sintering on TiO2 thin films transparent as the working electrode of transparent solar cells. TiO2 films will be sintered at temperature 450°C, 500°C, 550°C and 600°C. TiO2 films optical properties were characterized using UV-Vis spectrophotometer, electrical properties were characterized using 4 point probemethods and the crystallization was characterized by X-Ray Diffraction (XRD). The lowest transmittance due to the treatment of annealing temperature variations is 550°C because the 550°C TiO2 layer is more absorbing. The peaks resulted from the annealing temperature treatment show that the high temperature the more anatase peaks. Characterization using four-point probe showed that the highest conductivity of TiO2 18NR-T thin film was 2.42 x 102 Ω-1m-1 at annealing temperature 550°C.

Effect of the type of metal on the electrical conductivity and thermal properties of metal complexes: The relation between ionic radius of metal complexes and electrical conductivity

NASA Astrophysics Data System (ADS)

Morgan, Sh. M.; El-Ghamaz, N. A.; Diab, M. A.

2018-05-01

Co(II) complexes (1-4) and Ni(II) complexes (5-8) were prepared and characterized by elemental analysis, IR spectra and thermal analysis data. Thermal decomposition of all complexes was discussed using thermogravimetric analysis. The dielectric properties and alternating current conductivity were investigated in the frequency range 0.1-100 kHz and temperature range 300-660 K. The thermal activation energies of electrical conductivity (ΔE1 and ΔE2) values for complexes were calculated and discussed. The values of ΔE1 and ΔE2 for complexes (1-8) were found to decrease with increasing the frequency. Ac electrical conductivity (σac) values increases with increasing temperatures and the values of σac for Co(II) complexes are greater than Ni(II) complexes. Co(II) complexes showed a higher conductivity than other Ni(II) complexes due to the higher crystallinity as confirmed by X-ray diffraction analysis.

Freeze-out conditions in heavy ion collisions from QCD thermodynamics.

PubMed

Bazavov, A; Ding, H-T; Hegde, P; Kaczmarek, O; Karsch, F; Laermann, E; Mukherjee, Swagato; Petreczky, P; Schmidt, C; Smith, D; Soeldner, W; Wagner, M

2012-11-09

We present a determination of freeze-out conditions in heavy ion collisions based on ratios of cumulants of net electric charge fluctuations. These ratios can reliably be calculated in lattice QCD for a wide range of chemical potential values by using a next-to-leading order Taylor series expansion around the limit of vanishing baryon, electric charge and strangeness chemical potentials. From a computation of up to fourth order cumulants and charge correlations we first determine the strangeness and electric charge chemical potentials that characterize freeze-out conditions in a heavy ion collision and confirm that in the temperature range 150 MeV ≤ T ≤ 170 MeV the hadron resonance gas model provides good approximations for these parameters that agree with QCD calculations on the 5%-15% level. We then show that a comparison of lattice QCD results for ratios of up to third order cumulants of electric charge fluctuations with experimental results allows us to extract the freeze-out baryon chemical potential and the freeze-out temperature.

Determination of equilibrium electron temperature and times using an electron swarm model with BOLSIG+ calculated collision frequencies and rate coefficients

DOE PAGES

Pusateri, Elise N.; Morris, Heidi E.; Nelson, Eric M.; ...

2015-08-04

Electromagnetic pulse (EMP) events produce low-energy conduction electrons from Compton electron or photoelectron ionizations with air. It is important to understand how conduction electrons interact with air in order to accurately predict EMP evolution and propagation. An electron swarm model can be used to monitor the time evolution of conduction electrons in an environment characterized by electric field and pressure. Here a swarm model is developed that is based on the coupled ordinary differential equations (ODEs) described by Higgins et al. (1973), hereinafter HLO. The ODEs characterize the swarm electric field, electron temperature, electron number density, and drift velocity. Importantmore » swarm parameters, the momentum transfer collision frequency, energy transfer collision frequency, and ionization rate, are calculated and compared to the previously reported fitted functions given in HLO. These swarm parameters are found using BOLSIG+, a two term Boltzmann solver developed by Hagelaar and Pitchford (2005), which utilizes updated cross sections from the LXcat website created by Pancheshnyi et al. (2012). We validate the swarm model by comparing to experimental effective ionization coefficient data in Dutton (1975) and drift velocity data in Ruiz-Vargas et al. (2010). In addition, we report on electron equilibrium temperatures and times for a uniform electric field of 1 StatV/cm for atmospheric heights from 0 to 40 km. We show that the equilibrium temperature and time are sensitive to the modifications in the collision frequencies and ionization rate based on the updated electron interaction cross sections.« less

A 1 kA-class cryogen-free critical current characterization system for superconducting coated conductors.

PubMed

Strickland, N M; Hoffmann, C; Wimbush, S C

2014-11-01

A cryogenic electrical transport measurement system is described that is particularly designed to meet the requirements for routine and effective characterization of commercial second generation high-temperature superconducting (HTS) wires in the form of coated conductors based on YBa2Cu3O7. Specific design parameters include a base temperature of 20 K, an applied magnetic field capability of 8 T (provided by a HTS split-coil magnet), and a measurement current capacity approaching 1 kA. The system accommodates samples up to 12 mm in width (the widest conductor size presently commercially available) and 40 mm long, although this is not a limiting size. The sample is able to be rotated freely with respect to the magnetic field direction about an axis parallel to the current flow, producing field angle variations in the standard maximum Lorentz force configuration. The system is completely free of liquid cryogens for both sample cooling and magnet cool-down and operation. Software enables the system to conduct a full characterization of the temperature, magnetic field, and field angle dependence of the critical current of a sample without any user interaction. The system has successfully been used to measure a wide range of experimental and commercially-available superconducting wire samples sourced from different manufacturers across the full range of operating conditions. The system encapsulates significant advances in HTS magnet design and efficient cryogen-free cooling technologies together with the capability for routine and automated high-current electrical transport measurements at cryogenic temperatures. It will be of interest to both research scientists investigating superconductor behavior and commercial wire manufacturers seeking to accurately characterize the performance of their product under all desired operating conditions.

High temperature dielectric properties of Apical, Kapton, Peek, Teflon AF, and Upilex polymers

NASA Technical Reports Server (NTRS)

Hammoud, A. N.; Baumann, E. D.; Overton, E.; Myers, I. T.; Suthar, J. L.; Khachen, W.; Laghari, J. R.

1992-01-01

Reliable lightweight systems capable of providing electrical power at the magawatt level are a requirement for future manned space exploration missions. This can be achieved by the development of high temperature insulating materials which are not only capable of surviving the hostile space environment but can contribute to reducing the mass and weight of the heat rejection system. In this work, Apical, Upilex, Kapton, Teflon AF, and Peek polymers are characterized for AC and DC dielectric breakdown in air and in silicone oil at temperatures up to 250 C. The materials are also tested in terms of their dielectric constant and dissipation factor at high temperatures with an electrical stress of 60 Hz, 200 V/mil present. The effects of thermal aging on the properties of the films are determined after 15 hours of exposure to 200 and 250 C, each. The results obtained are discussed and conclusions are made concerning the suitability of these dielectrics for use in capacitors and cable insulations in high temperature environments.

High temperature dielectric properties of Apical, Kapton, Peek, Teflon AF, and Upilex polymers

NASA Astrophysics Data System (ADS)

Hammoud, A. N.; Baumann, E. D.; Overton, E.; Myers, I. T.; Suthar, J. L.; Khachen, W.; Laghari, J. R.

1992-06-01

Reliable lightweight systems capable of providing electrical power at the magawatt level are a requirement for future manned space exploration missions. This can be achieved by the development of high temperature insulating materials which are not only capable of surviving the hostile space environment but can contribute to reducing the mass and weight of the heat rejection system. In this work, Apical, Upilex, Kapton, Teflon AF, and Peek polymers are characterized for AC and DC dielectric breakdown in air and in silicone oil at temperatures up to 250 C. The materials are also tested in terms of their dielectric constant and dissipation factor at high temperatures with an electrical stress of 60 Hz, 200 V/mil present. The effects of thermal aging on the properties of the films are determined after 15 hours of exposure to 200 and 250 C, each. The results obtained are discussed and conclusions are made concerning the suitability of these dielectrics for use in capacitors and cable insulations in high temperature environments.

In situ synthesis of semiconducting single-walled carbon nanotubes by modified arc discharging method

NASA Astrophysics Data System (ADS)

Zhao, Tingkai; Ji, Xianglin; Jin, Wenbo; Yang, Wenbo; Zhao, Xing; Dang, Alei; Li, Hao; Li, Tiehu

2017-02-01

Semiconducting single-walled carbon nanotubes (s-SWCNTs) were in situ synthesized by a temperature-controlled arc discharging furnace with DC electric field using Co-Ni alloy powder as catalyst in helium gas. The microstructures of s-SWCNTs were characterized using high-resolution transmission electron microscopy, electron diffraction, and Raman spectrometry apparatus. The experimental results indicated that the best voltage value in DC electric field is 54 V, and the environmental temperature of the reaction chamber is 600 °C. The mean diameter of s-SWCNTs was estimated about 1.3 nm. The chiral vector ( n, m) of s-SWCNTs was calculated to be (10, 10) type according to the electron diffraction patterns.

Monocrystalline Heusler Co2FeSi alloy glass-coated microwires: Fabrication and magneto-structural characterization

NASA Astrophysics Data System (ADS)

Galdun, L.; Ryba, T.; Prida, V. M.; Zhukova, V.; Zhukov, A.; Diko, P.; Kavečanský, V.; Vargova, Z.; Varga, R.

2018-05-01

Large scale production of single crystalline phase of Heusler Co2FeSi alloy microwire is reported. The long microwire (∼1 km) with the metallic nucleus diameter of about 2 μm is characterized by well oriented monocrystalline structure (B2 phase, with the lattice parameter a = 5.615 Å). Moreover, the crystallographic direction [1 0 1] is parallel to the wire's axis along the entire length. Additionally, the wire is characterized by exhibiting a high Curie temperature (Tc > 800 K) and well-defined magnetic anisotropy mainly governed by shape. Electrical resistivity measurement reveals the exponential suppression of the electron-magnon scattering which provides strong evidence on the half-metallic behaviour of this material in the low temperature range.

Characterizing (rating) the performance of large photovoltaic arrays for all operating conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, D.L.; Eckert, P.E.

1996-06-01

A new method has been developed for characterizing the electrical performance of photovoltaic arrays. The method provides both a ``rating`` at standard reporting conditions and a rigorous yet straightforward model for predicting array performance at all operating conditions. For the first time, the performance model handles the influences of irradiance, module temperature, solar spectrum, solar angle-of-incidence, and temperature coefficients, in a practical way. Validity of the procedure was confirmed during field testing of a 25-kW array recently installed by Arizona Public Service Co. on Carol Spring Mountain (which powers microwave, ceullular phone, and TV communictions equipment). This paper describes themore » characterization procedure, measured array performance, and the predictive model.« less

Characterizing the Physical and Thermal Properties of Planetary Regolith at Low Temperatures

NASA Technical Reports Server (NTRS)

Mantovani, James G.; Swanger, Adam; Townsend, Ivan I., III; Sibille, Laurent; Galloway, Gregory

2014-01-01

The success or failure of in-situ resource utilization for planetary surface exploration-whether for science, colonization, or commercialization-relies heavily on the design and implementation of systems that can effectively process planetary regolith and exploit its potential benefits. In most cases, this challenge necessarily includes the characterization of regolith properties at low temperatures (cryogenic). None of the nearby solar system destinations of interest, such as the moon, Mars and asteroids, possess a sufficient atmosphere to sustain the consistently "high" surface temperatures found on Earth. Therefore, they can experience permanent cryogenic temperatures or dramatic cyclical changes in surface temperature. Characterization of physical properties (e.g., specific heat, thermal and electrical conductivity) over the entire temperature profile is important when planning a mission to a planetary surface; however, the impact on mechanical properties due to the introduction of icy deposits must also be explored in order to devise effective and robust excavation technologies. The Granular Mechanics and Regolith Operations Laboratory and the Cryogenics Test Laboratory at NASA Kennedy Space Center are developing technologies and experimental methods to address these challenges and to aid in the characterization of the physical and mechanical properties of regolith at cryogenic temperatures. This paper will review the current state of knowledge concerning planetary regolith at low temperature, including that of icy regolith, and describe efforts to manipulate icy regolith through novel penetration and excavation techniques.

Reduction mechanism of surface oxide films and characterization of formations on pulse electric-current sintered Al Mg alloy powders

NASA Astrophysics Data System (ADS)

Xie, Guoqiang; Ohashi, Osamu; Song, Minghui; Mitsuishi, Kazutaka; Furuya, Kazuo

2005-02-01

The microstructure of interfaces between powder particles in Al-Mg alloy specimens sintered by pulse electric-current sintering (PECS) process was characterized using high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The crystalline precipitates with nano-size in the interface were observed in all of Al-Mg alloy specimens. The composition was determined to be MgAl 2O 4 or MgO, or both of them, which depended on Mg content in alloy powder and sintering temperature. The precipitates were suggested to contribute to reduction reaction of Mg with oxide films originally covered at powder particles surface.

Stress studies in EFG

NASA Technical Reports Server (NTRS)

1984-01-01

Electrical characterization of defects induced in FZ and CZ silicon stress in four-point bending above 1200 C was started. Techniques to study electrical activity that will permit correlation of defect activity with diffusion length and with room and low temperature EBIC are being developed. Preliminary characterization of defects in ribbon grown at very low speeds of less than 1 cm/min shows that the dislocation density is very low over significant regions of cross section, while regions of high dislocation density (approx. 5 x 10(6)/cm(2)) occur in bands in a number of places. Addition measurements of stress distributions in EFG material were obtained at the University of Illinois using shadow-Moire interferometry.

Sol-gel derived CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics: Synthesis, characterization and electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu Laijun; Fan Huiqing; Fang Pinyang

2008-07-01

The giant dielectric constant material CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) has been synthesized by sol-gel method, for the first time, using nitrate and alkoxide precursor. The electrical properties of CCTO ceramics, showing an enormously large dielectric constant {epsilon} {approx} 60,000 (100 Hz at RT), were investigated in the temperature range from 298 to 358 K at 0, 5, 10, 20, and 40 V dc. The phases, microstructures, and impedance properties of final samples were characterized by X-ray diffraction, scanning electron microscopy, and precision impedance analyzer. The dielectric permittivity of CCTO synthesized by sol-gel method is at least three times ofmore » magnitude larger than that synthesized by other low-temperature method and solid-state reaction method. Furthermore, the results support the internal barrier layer capacitor (IBLC) model of Schottky barriers at grain boundaries between semiconducting grains.« less

Projection par plasma de depots de dioxyde de titane: Contribution a l'etude de leurs microstructures et proprietes electriques

NASA Astrophysics Data System (ADS)

Branland, Nadege

2002-04-01

The aim of this PhD work is, thanks to particle parameters (velocity and temperature) characterization, to try to understand the influence of plasma spray parameters on titania coating microstructures and the influence of the latter one on their electrical resistivity, for the same substrate conditions. The experimental approach has consisted in using two plasma spraying processes (Arc plasma spraying and Inductive plasma spraying) which have permitted to obtain a broad range of particle velocities and temperatures leading to coatings with specific microstructures. Despite the stoichiometry of the starting powder, all coatings obtained were grey, the oxygen loss increasing with the particle temperature. Isolating the stoichiometry influence has permitted to show that the decrease of the coatings electrical resistivity is especially due to the decrease of the number of bad interlamellar contacts.

Electro-thermal analysis of contact resistance

NASA Astrophysics Data System (ADS)

Pandey, Nitin; Jain, Ishant; Reddy, Sudhakar; Gulhane, Nitin P.

2018-05-01

Electro-Mechanical characterization over copper samples are performed at the macroscopic level to understand the dependence of electrical contact resistance and temperature on surface roughness and contact pressure. For two different surface roughness levels of samples, six levels of load are selected and varied to capture the bulk temperature rise and electrical contact resistance. Accordingly, the copper samples are modelled and analysed using COMSOLTM as a simulation package and the results are validated by the experiments. The interface temperature during simulation is obtained using Mikic-Elastic correlation and by directly entering experimental contact resistance value. The load values are varied and then reversed in a similar fashion to capture the hysteresis losses. The governing equations & assumptions underlying these models and their significance are examined & possible justification for the observed variations are discussed. Equivalent Greenwood model is also predicted by mapping the results of the experiment.

Growth and characterization of cubic SiC single-crystal films on Si

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Matus, L. G.; Kuczmarski, Maria A.

1987-01-01

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Growth and characterization of cubic SiC single-crystal films on Si

NASA Astrophysics Data System (ADS)

Powell, J. Anthony; Matus, L. G.; Kuczmarski, Maria A.

1987-06-01

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Characterization of Stress in Thallium Bromide Devices

NASA Astrophysics Data System (ADS)

Datta, Amlan; Motakef, Shariar

2015-04-01

Thallium bromide (TlBr) is a wide bandgap, compound semiconductor with high gamma-ray stopping power and promising physical properties. Several surface modification techniques have been demonstrated to increase the lifetime of TlBr devices at room temperature. However, absence of reproducibility in the performance of TlBr detectors (even with low ionic conduction at -20°C) suggests presence of unexplored bulk phenomena. Stress in the TlBr crystal due to various intrinsic (e.g. grain boundaries and dislocations networks) in conjunction with external factors such as thermal, mechanical, and electrical loadings explains detector-to-detector variations. Photoelasticity and opto-electrical techniques were applied to visualize and qualitatively correlate the device performance with stress. Changes in stress patterns with variations in ambient temperature were clearly demonstrated. Electric field fluctuations in TlBr detectors with time were for the first time observed using the Pockels effect.

Phase coexistence and electric-field control of toroidal order in oxide superlattices.

PubMed

Damodaran, A R; Clarkson, J D; Hong, Z; Liu, H; Yadav, A K; Nelson, C T; Hsu, S-L; McCarter, M R; Park, K-D; Kravtsov, V; Farhan, A; Dong, Y; Cai, Z; Zhou, H; Aguado-Puente, P; García-Fernández, P; Íñiguez, J; Junquera, J; Scholl, A; Raschke, M B; Chen, L-Q; Fong, D D; Ramesh, R; Martin, L W

2017-10-01

Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO 3 /SrTiO 3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a 1 /a 2 phase. At room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Our findings suggest new cross-coupled functionalities.

Phase coexistence and electric-field control of toroidal order in oxide superlattices

NASA Astrophysics Data System (ADS)

Damodaran, A. R.; Clarkson, J. D.; Hong, Z.; Liu, H.; Yadav, A. K.; Nelson, C. T.; Hsu, S.-L.; McCarter, M. R.; Park, K.-D.; Kravtsov, V.; Farhan, A.; Dong, Y.; Cai, Z.; Zhou, H.; Aguado-Puente, P.; García-Fernández, P.; Íñiguez, J.; Junquera, J.; Scholl, A.; Raschke, M. B.; Chen, L.-Q.; Fong, D. D.; Ramesh, R.; Martin, L. W.

2017-10-01

Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO3/SrTiO3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a1/a2 phase. At room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Our findings suggest new cross-coupled functionalities.

Phase coexistence and electric-field control of toroidal order in oxide superlattices

DOE PAGES

Damodaran, A. R.; Clarkson, J. D.; Hong, Z.; ...

2017-08-07

Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO 3/SrTiO 3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a 1/a 2 phase. At room temperature, the coexisting vortexmore » and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Here, our findings suggest new cross-coupled functionalities.« less

Temperature gating and competing temperature-dependent effects in DNA molecular wires

NASA Astrophysics Data System (ADS)

Wibowo, Denni; Narenji, Alaleh; Kassegne, Sam

2017-02-01

While recent research in electron-transport mechanism on a double strands DNA seems to converge into a consensus, experiments in direct electrical measurements on a long DNA molecules still lead to a conflicting result This study is the continuation of our previous research in electrical characterization of DNA molecular wires, where we furtherly investigate the effects of temperature on the electrical conductivity of DNA molecular wires by measuring its impedance response. We found that at higher temperatures, the expected increase in charge hopping mechanism may account for the decrease in impedance (and hence increase in conductivity) supporting the 'charge hopping mechanism' theory. UV light exposure, on the other hand, causes damage to GC base pairs reducing the path available for hopping mechanism and hence resulting in increased impedance - this again supporting the 'charge hopping mechanism' theory. We also report that λ-DNA molecular wires have differing impedance responses at two temperature regimes: impedance increases between 4 °C - 40 °C and then decreases between 40 °C - melting point (˜110 °C), after which λ-DNA denatures resulting in no current transduction. We submit that the low impedance of λ-DNA molecular wires observed at moderate to high frequencies may have significant implications to the field of DNA-based bionanoelectronics.

Thermo-structural analysis and electrical conductivity behavior of epoxy/metals composites

NASA Astrophysics Data System (ADS)

Boumedienne, N.; Faska, Y.; Maaroufi, A.; Pinto, G.; Vicente, L.; Benavente, R.

2017-05-01

This paper reports on the elaboration and characterization of epoxy resin filled with metallic particles powder (aluminum, tin and zinc) composites. The scanning electron microscopy (SEM) pictures, density measurements and x-ray diffraction analysis (DRX) showed a homogeneous phase of obtained composites. The differential scanning calorimetry revealed a good adherence at matrix-filler interfaces, confirming the SEM observations. The measured glass transition temperatures depend on composites fillers' nature. Afterwards, the electrical conductivity of composites versus their fillers' contents has been investigated. The obtained results depict a nonlinear behavior, indicating an insulator to conductor phase transition at a conduction threshold; with high contrast of ten decades. Hence, the elaborated materials give a possibility to obtain dielectric or electrically conducting phases, which can to be interesting in the choice of desired applications. Finally, the obtained results have been successfully simulated on the basis of different percolation models approach combined with structural characterization inferences.

In-plane isotropic magnetic and electrical properties of MnAs/InAs/GaAs (111) B hybrid structure

NASA Astrophysics Data System (ADS)

Islam, Md. Earul; Akabori, Masashi

2018-03-01

We characterized in-plane magnetic and electrical properties of MnAs/InAs/GaAs (111) B hybrid structure grown by molecular beam epitaxy (MBE). We observed isotropic easy magnetization in two crystallographic in-plane directions, [ 2 ̅ 110 ] and [ 0 1 ̅ 10 ] of hexagonal MnAs i.e. [ 1 ̅ 10 ] and [ 11 2 ̅ ] of cubic InAs. We also fabricated transmission line model (TLM) devices, and observed almost isotropic electrical properties in two crystallographic in-plane directions, [ 1 ̅ 10 ] and [ 11 2 ̅ ] of cubic InAs. Also we tried to fabricate and characterize lateral spin-valve (LSV) devices from the hybrid structure. We could roughly estimate the spin injection efficiency and the spin diffusion length at room temperature in [ 11 2 ̅ ] direction. We believe that the hybrid structures are helpful to design spintronic device with good flexibility in-plane.

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

2004-01-01

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Electron density and temperature in an atmospheric-pressure helium diffuse dielectric barrier discharge from kHz to MHz

NASA Astrophysics Data System (ADS)

Boisvert, J.-S.; Stafford, L.; Naudé, N.; Margot, J.; Massines, F.

2018-03-01

Diffuse dielectric barrier discharges are generated over a very wide range of frequencies. According to the targeted frequency, the glow, Townsend-like, hybrid, Ω and RF-α modes are sustained. In this paper, the electrical characterization of the discharge cell together with an electrical model are used to estimate the electron density from current and voltage measurements for excitation frequencies ranging from 50 kHz to 15 MHz. The electron density is found to vary from 1014 to 1017 m-3 over this frequency range. In addition, a collisional-radiative model coupled with optical emission spectroscopy is used to evaluate the electron temperature (assuming Maxwellian electron energy distribution function) in the same conditions. The time and space-averaged electron temperature is found to be about 0.3 eV in both the low-frequency and high-frequency ranges. However, in the medium-frequency range, it reaches almost twice this value as the discharge is in the hybrid mode. The hybrid mode is similar to the atmospheric-pressure glow discharge usually observed in helium DBDs at low frequency with the major difference being that the plasma is continuously sustained and is characterized by a higher power density.

Characterization of a Low-Cost Multi-Parameter Sensor for Resource Applications: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Habte, Aron M; Sengupta, Manajit; Andreas, Afshin M

Low-cost multi-parameter sensing and measurement devices enable cost-effective monitoring of the functional, operational reliability, efficiency, and resiliency of the electrical grid. The National Renewable Research Laboratory (NREL) Solar Radiation Research Laboratory (SRRL), in collaboration with Arable Labs Inc., deployed Arable Lab's Mark multi-parameter sensor system. The unique suite of system sensors measures the down-welling and upwelling shortwave solar resource and longwave radiation, humidity, air temperature, and ground temperature. This study describes the shortwave calibration, characteriza-tion, and validation of measurement accuracy of this instrument by comparison with existing instruments that are part of NREL-SRRL's Baseline Measurement System.

Influence of annealing temperature on the structural, optical and electrical properties of amorphous Zinc Sulfide thin films

NASA Astrophysics Data System (ADS)

Göde, F.; Güneri, E.; Kariper, A.; Ulutaş, C.; Kirmizigül, F.; Gümüş, C.

2011-11-01

Zinc sulfide films have been deposited on glass substrates at room temperature by the chemical bath deposition technique. The growth mechanism is studied using X-ray diffraction, scanning electron microscopy, optical absorption spectra and electrical measurements. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (100, 200, 300 400 and 500 °C) for 1 h. The annealed film was also characterized by structural, optical and electrical studies. The structural analyses revealed that the as-deposited film was amorphous, but after being annealed at 500 °C, it changed to polycrystalline. The optical band gap is direct with a value of 4.01 eV, but this value decreased to 3.74 eV with annealing temperature, except for the 500 °C anneal where it only decreased to 3.82 eV. The refractive index (n), extinction coefficient (k), and real (ɛ1) and imaginary (ɛ2) parts of the dielectric constant are evaluated. Raman peaks appearing at ~478 cm-1, ~546 cm-1, ~778 cm-1 and ~1082 cm-1 for the annealed film (500 °C) were attributed to [TOl+LAΣ, 2TOΓ, 2LO, 3LO phonons of ZnS. The electrical conductivities of both as-deposited and annealed films have been calculated to be of the order of ~10-10 (Ω cm)-1 .

Development of a multiphysics model to characterize the responsive behavior of urea-sensitive hydrogel as biosensor.

PubMed

Goh, K B; Li, Hua; Lam, K Y

2017-05-15

A remarkable feature of biomaterials is their ability to deform in response to certain external bio-stimuli. Here, a novel biochemo-electro-mechanical model is developed for the numerical characterization of the urea-sensitive hydrogel in response to the external stimulus of urea. The urea sensitivity of the hydrogel is usually characterized by the states of ionization and denaturation of the immobilized urease, as such the model includes the effect of the fixed charge groups and temperature coupled with pH on the activity of the urease. Therefore, a novel rate of reaction equation is proposed to characterize the hydrolysis of urea that accounts for both the ionization and denaturation states of the urease subject to the environmental conditions. After examination with the published experimental data, it is thus confirmed that the model can characterize well the responsive behavior of the urea-sensitive hydrogel subject to the urea stimulus, including the distribution patterns of the electrical potential and pH of the hydrogel. The results point to an innovative means for generating electrical power via the enzyme-induced pH and electrical potential gradients, when the hydrogel comes in contact with the urea-rich solution, such as human urine. Copyright © 2017 Elsevier B.V. All rights reserved.

Using the ferroelectric/ferroelastic effect at cryogenic temperatures for set-and-hold actuation

NASA Astrophysics Data System (ADS)

Steeves, J. B.; Golinveaux, F. S.; Lynch, C. S.

2018-06-01

The ferroelectric and ferroelastic properties of lead-zirconate-titanate (PZT) based stack actuators have been characterized at temperatures down to 25 K and under various levels of constant compressive stress. Experiments indicate that the coercive field and magnitude of strain at the coercive field display an inverse relationship with temperature. A factor of 5.5 increase in coercive field, and a factor of 4.3 increase in strain is observed at 25 K in comparison to the room-temperature conditions. This information was used to induce non-180° domain wall motion in the material through the application of electric fields at or near the coercive field. The change in remanent strain accompanying these effects was shown to increase in magnitude as temperature decreased, reaching values of 2000 ppm at 25 K. This behavior was also shown to be temporally stable even under compressive loads. Additionally, it was demonstrated that the material can be returned to its original strain state through a repolarizing electric field. This switchable behavior could be exploited for future set-and-hold type actuators operating at cryogenic temperatures.

Dielectric and electric modulus study of PPy/TiO2/CNT/SLS composite with temperature

NASA Astrophysics Data System (ADS)

Tiwari, D. C.; Atri, Priyanka; Sharma, Rishi

2013-02-01

Here we report the preparation and electrical characterization of nanocomposite of PPy/TiO2/CNT/SLS synthesized by in situ oxidative polymerization of pyrrole in the presence of TiO2 nanofibers, CNT and surfactant sodium lauryl sulfate. The surface morphology and elemental analysis is studied by SEM and EDAX. Dielectric and modulas studies were carried out in frequency range of 1 KHz to 2 MHz which provides quantitative description of grain and grain boundary effect in nanocomposite material.

Electrical conductivity and morphology of electrochemical synthesized polyaniline/CuO nano composites

NASA Astrophysics Data System (ADS)

Ashokkumar, S. P.; Yesappa, L.; Vijeth, H.; Niranjana, M.; Devendrappa, H.

2018-05-01

Polyaniline (PANI) and Polyaniline/CuO nanocomposite have been synthesized by using electrochemical deposition method. The composite was characterized using Fourier transform infra-red spectroscopy (FT-IR) to confirm the chemical interaction changes, micro structural morphology was done by Field Emission Scanning Electronic Microscopy (FESEM) and High Resolution Transmission Electron Microscopy (HRTEM). The dielectric constant and AC conductivity are found to increases with increase in temperature range (303 to 393K), these results shows enhancement in electrical conductivity due to effect of nanocomposite.

PLZT capacitor and method to increase the dielectric constant

DOEpatents

Taylor, Ralph S.; Fairchild, Manuel Ray; Balachjandran, Uthamalingam; Lee, Tae H.

2017-12-12

A ceramic-capacitor includes a first electrically-conductive-layer, a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer, and a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer. The dielectric-layer is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz). A method for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer of a ceramic-capacitor, and heating the ceramic-capacitor to a temperature not greater than 300.degree. C.

Dielectric characterization of CuxS-NiySz/FNBR and CuS-NiySz/FNBR nanocomposites

NASA Astrophysics Data System (ADS)

Balayeva, Ofeliya O.; Azizov, Abdulsaid A.; Muradov, Mustafa B.; Eyvazova, Goncha M.

2017-06-01

CuxS-NiySz/FNBR and CuS-NiySz/FNBR nanocomposites (NCs) were prepared from β-NiS/FNBR by ion exchange method and dielectric characterized. Dielectric properties of NCs were investigated at the temperature of 26 °C-120 °C in 120-106 Hz frequency range. With measuring electric capacity and resistance of the samples at different frequency we have studied the dielectric permittivity, dielectric loss tangent, dielectric modulus, conductivity, relaxation times and Cole-Cole plots were obtained. At 120 °C measurement temperature, some of the destruction processes in polymers affect to interfacial interaction between the polymer and particles surface. After high temperature measurement all three samples were cooled to room temperature and their dielectric measurements were carried out at room temperature. It is observed that at high measurement temperature some of carriers transfer from one energy level to another and the dipole orientation did not return completely to the previous situation.

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

PubMed

Wu, Jingjin; Zhao, Yinchao; Zhao, Ce Zhou; Yang, Li; Lu, Qifeng; Zhang, Qian; Smith, Jeremy; Zhao, Yongming

2016-08-13

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV-vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350-550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

PubMed Central

Wu, Jingjin; Zhao, Yinchao; Zhao, Ce Zhou; Yang, Li; Lu, Qifeng; Zhang, Qian; Smith, Jeremy; Zhao, Yongming

2016-01-01

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition. PMID:28773816

Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO3 ceramics for dielectric tunable device application.

PubMed

Huang, Xian-Xiong; Zhang, Tian-Fu; Tang, Xin-Gui; Jiang, Yan-Ping; Liu, Qiu-Xiang; Feng, Zu-Yong; Zhou, Qi-Fa

2016-09-15

The behavior of ferroelectric domain under applied electric field is very sensitive to point defects, which can lead to high temperature dielectric relaxation behaviors. In this work, the phases, dielectric properties and ferroelectric switching behavior of strontium lead titanate ceramics were investigated. The structural characterization is confirmed by X-ray diffraction. The high dielectric tunability and high figure of merit of ceramics, especially Sr0.7Pb0.3TiO3 (SPT), imply that SPT ceramics are promising materials for tunable capacitor applications. Oxygen vacancies induced dielectric relaxation phenomenon is observed. Pinched shape hysteresis loops appeared in low temperature, low electric field or high frequency, whereas these pinched hysteresis loops also can become normal by rising temperature, enhancing electric field or lowering frequency. The pinning and depinning effect can be ascribed to the interaction between oxygen vacancies and domain switching. A qualitative model and a quantitative model are used to explain this phenomenon. Besides, polarization and oxygen treated experiment can exert an enormous influence on pinning effect and the machanisms are also discussed in this work.

Analysis Model and Numerical Simulation of Thermoelectric Response of CFRP Composites

NASA Astrophysics Data System (ADS)

Lin, Yueguo

2018-05-01

An electric current generates Joule heating, and under steady state conditions, a sample exhibits a balance between the strength dissipated by the Joule effect and the heat exchange with the environment by radiation and convection. In the present paper, theoretical model, numerical FEM and experimental methods have been used to analyze the radiation and free convection properties in CFRP composite samples heated by an electric current. The materials employed in these samples have applications in many aeronautic devices. This study addresses two types of composite materials, UD [0]8 and QI [45/90/-45/0]S, which were prepared for thermoelectric experiments. A DC electric current (ranging from 1A to 8A) was injected through the specimen ends to find the coupling effect between the electric current and temperature. An FE model and simplified thermoelectric analysis model are presented in detail to represent the thermoelectric data. These are compared with the experimental results. All of the test equipments used to obtain the experimental data and the numerical simulations are characterized, and we find that the numerical simulations correspond well with the experiments. The temperature of the surface of the specimen is almost proportional to the electric current. The simplified analysis model was used to calculate the balance time of the temperature, which is consistent throughout all of the experimental investigations.

Contributions of intrinsic and extrinsic polarization species to energy storage properties of Ba0.95Ca0.05Zr0.2Ti0.8O3 ceramics

NASA Astrophysics Data System (ADS)

Zhan, Di; Xu, Qing; Huang, Duan-Ping; Liu, Han-Xing; Chen, Wen; Zhang, Feng

2018-03-01

Ba0.95Ca0.05Zr0.2Ti0.8O3 ceramics were prepared at different sintering temperatures by citrate precursor and solid-state reaction methods, respectively. The crystal structure and microstructure of the specimens were characterized. In view of energy storage capacitor utilizations, the dielectric properties of the specimens were investigated at room temperature as a function of frequency and applied electric field. Moreover, the nature of mobile charge carriers in the specimens was diagnosed by complex impedance spectroscopy at elevated temperatures. While the dielectric constants of the specimens prepared by different methods are quite different (4.4 × 103-2.2 × 104 at 10 kHz) at zero electric field, the energy storage densities at an identical strong electric field are similar (e.g. 0.32-0.41 J/cm3 at 120 kV/cm). The dielectric constants under bias electric field were fitted to a multipolarization mechanism model to resolve the contributions of intrinsic and extrinsic polarization mechanisms. It turned out that the extrinsic contributions fade out within low electric field range (<20 kV/cm) and thereby the intrinsic lattice polarization governs the overall dielectric responses at higher fields. Based on the fitting result, the energy storage properties of the specimens were interpreted.

Evaluation of 2004 Toyota Prius Hybrid Electric Drive System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Staunton, Robert H; Ayers, Curtis William; Chiasson, J. N.

2006-05-01

The 2004 Toyota Prius is a hybrid automobile equipped with a gasoline engine and a battery- and generator-powered electric motor. Both of these motive-power sources are capable of providing mechanical-drive power for the vehicle. The engine can deliver a peak-power output of 57 kilowatts (kW) at 5000 revolutions per minute (rpm) while the motor can deliver a peak-power output of 50 kW over the speed range of 1200-1540 rpm. Together, this engine-motor combination has a specified peak-power output of 82 kW at a vehicle speed of 85 kilometers per hour (km/h). In operation, the 2004 Prius exhibits superior fuel economymore » compared to conventionally powered automobiles. To acquire knowledge and thereby improve understanding of the propulsion technology used in the 2004 Prius, a full range of design characterization studies were conducted to evaluate the electrical and mechanical characteristics of the 2004 Prius and its hybrid electric drive system. These characterization studies included (1) a design review, (2) a packaging and fabrication assessment, (3) bench-top electrical tests, (4) back-electromotive force (emf) and locked rotor tests, (5) loss tests, (6) thermal tests at elevated temperatures, and most recently (7) full-design-range performance testing in a controlled laboratory environment. This final test effectively mapped the electrical and thermal results for motor/inverter operation over the full range of speeds and shaft loads that these assemblies are designed for in the Prius vehicle operations. This testing was undertaken by the Oak Ridge National Laboratory (ORNL) as part of the U.S. Department of Energy (DOE) - Energy Efficiency and Renewable Energy (EERE) FreedomCAR and Vehicle Technologies (FCVT) program through its vehicle systems technologies subprogram. The thermal tests at elevated temperatures were conducted late in 2004, and this report does not discuss this testing in detail. The thermal tests explored the derating of the Prius motor design if operated at temperatures as high as is normally encountered in a vehicle engine. The continuous ratings at base speed (1200 rpm) with different coolant temperatures are projected from test data at 900 rpm. A separate, comprehensive report on this thermal control study is available [1].« less

Studies on temperature coefficient of resistivity of Cu2Se - V2O5 nanocomposite

NASA Astrophysics Data System (ADS)

Sairam, S.; Rai, Ranjan; Molli, Muralikrishna

2018-05-01

Nanocomposite of Copper Selenide in Vanadium Pentoxide (Cu2Se-V2O5) was prepared and characterized using XRD for phase analysis, SEM for morphology, and EDAX for elemental analysis. Electrical resistivity measurement was carried out using van der Pauw method as a function of temperature from 35 °C to 170 °C for 5 mol% Cu2Se - 95 mol%V2O5 composite. The temperature coefficient of resistivity was found to be -1.8% per °C.

Date palm biochar-polymer composites: An investigation of electrical, mechanical, thermal and rheological characteristics.

PubMed

Poulose, Anesh Manjaly; Elnour, Ahmed Yagoub; Anis, Arfat; Shaikh, Hamid; Al-Zahrani, S M; George, Justin; Al-Wabel, Mohammad I; Usman, Adel R; Ok, Yong Sik; Tsang, Daniel C W; Sarmah, Ajit K

2018-04-01

The application of biochar (BC) as a filler in polymers can be viewed as a sustainable approach that incorporates pyrolysed waste based value-added material and simultaneously mitigate bio-waste in a smart way. The overarching aim of this work was to investigate the electrical, mechanical, thermal and rheological properties of biocomposite developed by utilizing date palm waste-derived BC for the reinforcing of polypropylene (PP) matrix. Date palm waste derived BC prepared at (700 and 900°C) were blended at different proportions with polypropylene and the resultant composites (BC/PP) were characterized using an array of techniques (scanning electron microscope, energy-dispersive X-ray spectroscopy and Fourier transform infra-red spectroscopy). Additionally the thermal, mechanical, electrical and rheological properties of the BC/PP composites were evaluated at different loading of BC content (from 0 to15% w/w). The mechanical properties of BC/PP composites showed an improvement in the tensile modulus while that of electrical characterization revealed an enhanced electrical conductivity with increased BC loading. Although the BC incorporation into the PP matrix has significantly reduced the total crystallinity of the resulted composites, however; a positive effect on the crystallization temperature (T c ) was observed. The rheological characterization of BC/PP composites revealed that the addition of BC had minimal effect on the storage modulus (G') compared to the neat (PP). Copyright © 2017 Elsevier B.V. All rights reserved.

Preparation of graphene by electrical explosion of graphite sticks.

PubMed

Gao, Xin; Xu, Chunxiao; Yin, Hao; Wang, Xiaoguang; Song, Qiuzhi; Chen, Pengwan

2017-08-03

Graphene nanosheets were produced by electrical explosion of high-purity graphite sticks in distilled water at room temperature. The as-prepared samples were characterized by various techniques to find different forms of carbon phases, including graphite nanosheets, few-layer graphene, and especially, mono-layer graphene with good crystallinity. Delicate control of energy injection is critical for graphene nanosheet formation, whereas mono-layer graphene was produced under the charging voltage of 22.5-23.5 kV. On the basis of electrical wire explosion and our experimental results, the underlying mechanism that governs the graphene generation was carefully illustrated. This work provides a simple but innovative route for producing graphene nanosheets.

Design methodology and results evaluation of a heating functionality in modular lab-on-chip systems

NASA Astrophysics Data System (ADS)

Streit, Petra; Nestler, Joerg; Shaporin, Alexey; Graunitz, Jenny; Otto, Thomas

2018-06-01

Lab-on-a-chip (LoC) systems offer the opportunity of fast and customized biological analyses executed at the ‘point-of-need’ without expensive lab equipment. Some biological processes need a temperature treatment. Therefore, it is important to ensure a defined and stable temperature distribution in the biosensor area. An integrated heating functionality is realized with discrete resistive heating elements including temperature measurement. The focus of this contribution is a design methodology and evaluation technique of the temperature distribution in the biosensor area with regard to the thermal-electrical behaviour of the heat sources. Furthermore, a sophisticated control of the biosensor temperature is proposed. A finite element (FE) model with one and more integrated heat sources in a polymer-based LoC system is used to investigate the impact of the number and arrangement of heating elements on the temperature distribution around the heating elements and in the biosensor area. Based on this model, various LOC systems are designed and fabricated. Electrical characterization of the heat sources and independent temperature measurements with infrared technique are performed to verify the model parameters and prove the simulation approach. The FE model and the proposed methodology is the foundation for optimization and evaluation of new designs with regard to temperature requirements of the biosensor. Furthermore, a linear dependency of the heater temperature on the electric current is demonstrated in the targeted temperature range of 20 °C to 70 °C enabling the usage of the heating functionality for biological reactions requiring a steady-state temperature up to 70 °C. The correlation between heater and biosensor area temperature is derived for a direct control through the heating current.

Electrical and structural behaviour of the perovskite LaCr0.4Co0.4Fe0.2O3

NASA Astrophysics Data System (ADS)

Rativa-Parada, W.; Gómez-Cuaspud, J. A.; Vera-López, E.; Carda-Castelló, J. B.

2017-12-01

The electrical and structural properties of the LaCr0.4Co0.4Fe0.2O3 perovskite are investigated. The oxide is synthetized by polymerization-combustion method, using citric acid as a chelating agent and low calcination temperature. The X-ray diffraction, Raman spectroscopy and transmission electron microscopy analysis show conformation of a pure phase with rhombohedral (R-3c) structure and confirmed high structural crystallinity facilitated by synthesis method. The characterization by means of impedance spectroscopy is performed at room temperature. It is observed that the oxides behave as materials of the semiconductor type and that the conductivity increase in accordance to a thermal excitation phenomenon.

Use of electrical imaging and distributed temperature sensing methods to characterize surface water–groundwater exchange regulating uranium transport at the Hanford 300 Area, Washington

USGS Publications Warehouse

Slater, Lee D.; Ntarlagiannis, Dimitrios; Day-Lewis, Frederick D.; Mwakanyamale, Kisa; Versteeg, Roelof J.; Ward, Andy; Strickland, Christopher; Johnson, Carole D.; Lane, John W.

2010-01-01

We explored the use of continuous waterborne electrical imaging (CWEI), in conjunction with fiber‐optic distributed temperature sensor (FO‐DTS) monitoring, to improve the conceptual model for uranium transport within the Columbia River corridor at the Hanford 300 Area, Washington. We first inverted resistivity and induced polarization CWEI data sets for distributions of electrical resistivity and polarizability, from which the spatial complexity of the primary hydrogeologic units was reconstructed. Variations in the depth to the interface between the overlying coarse‐grained, high‐permeability Hanford Formation and the underlying finer‐grained, less permeable Ringold Formation, an important contact that limits vertical migration of contaminants, were resolved along ∼3 km of the river corridor centered on the 300 Area. Polarizability images were translated into lithologic images using established relationships between polarizability and surface area normalized to pore volume (Spor). The FO‐DTS data recorded along 1.5 km of cable with a 1 m spatial resolution and 5 min sampling interval revealed subreaches showing (1) temperature anomalies (relatively warm in winter and cool in summer) and (2) a strong correlation between temperature and river stage (negative in winter and positive in summer), both indicative of reaches of enhanced surface water–groundwater exchange. The FO‐DTS data sets confirm the hydrologic significance of the variability identified in the CWEI and reveal a pattern of highly focused exchange, concentrated at springs where the Hanford Formation is thickest. Our findings illustrate how the combination of CWEI and FO‐DTS technologies can characterize surface water–groundwater exchange in a complex, coupled river‐aquifer system.

Extracellular signal fluctuations in shark electrosensors

NASA Astrophysics Data System (ADS)

Brown, Brandon R.; Hughes, Mary E.; Hutchison, John C.

2003-05-01

We examine the roll of an extracellular gel in the functioning of the electrosensors of elasmobranchs (sharks, skates, and rays). Here we focus on physical characteristics of the gel and their mechanistic relevance to the observed functioning of the electrosensors. The electrosensitive organs show sharp transient responses to both tiny electrical fluctuations and temperature fluctuations. We present a thermoelectric characterization of the gel. The data suggest a gel-mediated mechanism of transducing thermal fluctuations to electrical fluctuations in the electrosensor, independent of the sensing cells. We also present frequency-dependent electrical properties of the gel collected using electrical impedance spectroscopy. From these measurements we try to extract characteristic relaxation times. We analyze these results within the context of the electrosensors" bandwidth, as demonstrated in previous behavioral experiments.

Inductively Coupled Plasma-Induced Electrical Damage on HgCdTe Etched Surface at Cryogenic Temperatures

NASA Astrophysics Data System (ADS)

Liu, L. F.; Chen, Y. Y.; Ye, Z. H.; Hu, X. N.; Ding, R. J.; He, L.

2018-03-01

Plasma etching is a powerful technique for transferring high-resolution lithographic patterns into HgCdTe material with low etch-induced damage, and it is important for fabricating small-pixel-size HgCdTe infrared focal plane array (IRFPA) detectors. P- to n-type conversion is known to occur during plasma etching of vacancy-doped HgCdTe; however, it is usually unwanted and its removal requires extra steps. Etching at cryogenic temperatures can reduce the etch-induced type conversion depth in HgCdTe via the electrical damage mechanism. Laser beam-induced current (LBIC) is a nondestructive photoelectric characterization technique which can provide information regarding the vertical and lateral electrical field distribution, such as defects and p-n junctions. In this work, inductively coupled plasma (ICP) etching of HgCdTe was implemented at cryogenic temperatures. For an Ar/CH4 (30:1 in SCCM) plasma with ICP input power of 1000 W and RF-coupled DC bias of ˜ 25 V, a HgCdTe sample was dry-etched at 123 K for 5 min using ICP. The sample was then processed to remove a thin layer of the plasma-etched region while maintaining a ladder-like damaged layer by continuously controlling the wet chemical etching time. Combining the ladder etching method and LBIC measurement, the ICP etching-induced electrical damage depth was measured and estimated to be about 20 nm. The results indicate that ICP etching at cryogenic temperatures can significantly suppress plasma etching-induced electrical damage, which is beneficial for defining HgCdTe mesa arrays.

Cu self-sputtering MD simulations for 0.1-5 keV ions at elevated temperatures

NASA Astrophysics Data System (ADS)

Metspalu, Tarvo; Jansson, Ville; Zadin, Vahur; Avchaciov, Konstantin; Nordlund, Kai; Aabloo, Alvo; Djurabekova, Flyura

2018-01-01

Self-sputtering of copper under high electric fields is considered to contribute to plasma buildup during a vacuum breakdown event frequently observed near metal surfaces, even in ultra high vacuum condition in different electric devices. In this study, by means of molecular dynamics simulations, we analyze the effect of surface temperature and morphology on the yield of self-sputtering of copper with ion energies of 0.1-5 keV. We analyze all three low-index surfaces of Cu, {1 0 0}, {1 1 0} and {1 1 1}, held at different temperatures, 300 K, 500 K and 1200 K. The surface roughness relief is studied by either varying the angle of incidence on flat surfaces, or by using arbitrary roughened surfaces, which result in a more natural distribution of surface relief variations. Our simulations provide detailed characterization of copper self-sputtering with respect to different material temperatures, crystallographic orientations, surface roughness, energies, and angles of ion incidence.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Changlei; Xiao, Chuanxiao; Yu, Yue

Through detailed device characterization using cross-sectional Kelvin probe force microscopy (KPFM) and trap density of states measurements, we identify that the J-V hysteresis seen in planar organic-inorganic hybrid perovskite solar cells (PVSCs) using SnO 2 electron selective layers (ESLs) synthesized by low-temperature plasma-enhanced atomic-layer deposition (PEALD) method is mainly caused by the imbalanced charge transportation between the ESL/perovskite and the hole selective layer/perovskite interfaces. We find that this charge transportation imbalance is originated from the poor electrical conductivity of the low-temperature PEALD SnO 2 ESL. We further discover that a facile low-temperature thermal annealing of SnO 2 ESLs can effectivelymore » improve the electrical mobility of low-temperature PEALD SnO 2 ESLs and consequently significantly reduce or even eliminate the J-V hysteresis. With the reduction of J-V hysteresis and optimization of deposition process, planar PVSCs with stabilized output powers up to 20.3% are achieved. Here, the results of this study provide insights for further enhancing the efficiency of planar PVSCs.« less

Electromechanical coupling and temperature-dependent polarization reversal in piezoelectric ceramics.

PubMed

Weaver, Paul M; Cain, Markys G; Correia, Tatiana M; Stewart, Mark

2011-09-01

Electrostriction plays a central role in describing the electromechanical properties of ferroelectric materials, including widely used piezoelectric ceramics. The piezoelectric properties are closely related to the underlying electrostriction. Small-field piezoelectric properties can be described as electrostriction offset by the remanent polarization which characterizes the ferroelectric state. Indeed, even large-field piezoelectric effects are accurately accounted for by quadratic electrostriction. However, the electromechanical properties deviate from this simple electrostrictive description at electric fields near the coercive field. This is particularly important for actuator applications, for which very high electromechanical coupling can be obtained in this region. This paper presents the results of an experimental study of electromechanical coupling in piezoelectric ceramics at electric field strengths close to the coercive field, and the effects of temperature on electromechanical processes during polarization reversal. The roles of intrinsic ferroelectric strain coupling and extrinsic domain processes and their temperature dependence in determining the electromechanical response are discussed.

Structure, temperature and frequency dependent electrical conductivity of oxidized and reduced electrochemically exfoliated graphite

NASA Astrophysics Data System (ADS)

Radoń, Adrian; Włodarczyk, Patryk; Łukowiec, Dariusz

2018-05-01

The article presents the influence of reduction by hydrogen in statu nascendi and modification by hydrogen peroxide on the structure and electrical conductivity of electrochemically exfoliated graphite. It was confirmed that the electrochemical exfoliation can be used to produce oxidized nanographite with an average number of 25 graphene layers. The modified electrochemical exfoliated graphite and reduced electrochemical exfoliated graphite were characterized by high thermal stability, what was associated with removing of labile oxygen-containing groups. The presence of oxygen-containing groups was confirmed using Fourier-transform infrared spectroscopy. Influence of chemical modification by hydrogen and hydrogen peroxide on the electrical conductivity was determined in wide frequency (0.1 Hz-10 kHz) and temperature range (-50 °C-100 °C). Material modified by hydrogen peroxide (0.29 mS/cm at 0 °C) had the lowest electrical conductivity. This can be associated with oxidation of unstable functional groups and was also confirmed by analysis of Raman spectra. The removal of oxygen-containing functional groups by hydrogen in statu nascendi resulted in a 1000-fold increase in the electrical conductivity compared to the electrochemical exfoliated graphite.

Characterization of Resistances of a Capacitive Deionization System

DOE PAGES

Qu, Yatian; Baumann, Theodore F.; Santiago, Juan G.; ...

2015-07-27

Capacitive deionization (CDI) is a promising desalination technology, which operates at low pressure, low temperature, requires little infrastructure, and has the potential to consume less energy for brackish water desalination. However, CDI devices consume significantly more energy than the theoretical thermodynamic minimum, and this is at least partly due to resistive power dissipation. We here report our efforts to characterize electric resistances in a CDI system, with a focus on the resistance associated with the contact between current collectors and porous electrodes. We present an equivalent circuit model to describe resistive components in a CDI cell. We propose measurable figuresmore » of merit to characterize cell resistance. We also show that contact pressure between porous electrodes and current collectors can significantly reduce contact resistance. As a result, we propose and test an alternative electrical contact configuration which uses a pore-filling conductive adhesive (silver epoxy) and achieves significant reductions in contact resistance.« less

Characterization of AC current sensor based on giant magnetoresistance and coil for power meter design

NASA Astrophysics Data System (ADS)

Dhani, H. S.; Aminudin, A.; Waslaluddin

2018-05-01

Electric current is the basic variable of measurement in instrumentation system. One of the current measurements had been developed was based on magnetic sensor. Giant Magnetoresistance (GMR) produces an output voltage when it detects the magnetic field from electric current flow. The purpose of this study was to characterize the response of GMR when variation number of coil was given. The characterization was the GMR voltage response to the AC current values from 0.01 A to 5.00 A. The linearity of the relation was reaching saturation point when the magnetic field measured higher than 10.5 Oe at room temperature. As the number of coil increased, the earlier saturation occurred. To see the sensitivity of the sensor response, the data graph was cut off at 1.56 A AC. From this research, we got single coil was ideal to measure electric current higher than 1.56 A AC, as the relation of GMR voltage to the current tended to maintain its linearity. For measurement of 1.56 A AC and less, coil number addition would increase the sensitivity of sensor response. This research hopefully will be benefit for further development using an electric current measurement based on GMR magnetic sensor for power meter design.

Electrical Characteristics CuFe2O4 Thick Film Ceramics Made with Different Screen Size Utiizing Fe2O3 Nanopowder Derived from Yarosite for NTC Thermistor

NASA Astrophysics Data System (ADS)

Wiendartun, Syarif, Dani Gustaman

2010-10-01

Fabrication of CuFe2O4 thick film ceramics utilizing Fe2O3 derived from yarosite using screen printing technique for NTC thermistor has been carried out. Effect of thickness variation due to different size of screen (screen 225; 300 and 375 mesh) has been studied. X-ray diffraction analyses (XRD) was done to know crystal structure and phases formation. SEM analyses was carried out to know microstructure of the films. Electrical properties characterization was done through measurement of electrical resistance at various temperatures (room temperature to 100° C). The XRD data showed that the films crystalize in tetragonal spinel. The SEM images showed that the screen with the smaller of the hole size, made the grain size was bigger. Electrical data showed that the larger the screen different size thickness variation (mesh), the larger the resistance, thermistor constant and sensitivity. From the electrical characteristics data, it was known that the electrical characteristics of the CuFe2O4 thick film ceramics followed the NTC characteristic. The value of B and RRT of the produced CuFe2O4 ceramics namely B = 3241-3484 K and RRT = 25.6-87.0 M Ohm, fitted market requirement.

Synthesis, characterization, temperature dependent electrical and magnetic properties of Ca3Co4O9 by a starch assisted sol-gel combustion method

NASA Astrophysics Data System (ADS)

Agilandeswari, K.; Ruban Kumar, A.

2014-09-01

In this present work we discussed the synthesis of pure Ca3Co4O9 ceramic powder by a starch assisted sol-gel combustion method. The products were characterized by powder X-ray diffraction (XRD), thermogravimetric and differential thermal analyses (TGA-DTA), Fourier transformation infrared spectroscopy (FTIR), scanning electron microscope (SEM) and UV-visible diffuse reflectance spectroscopy (DRS). X-ray diffraction pattern confirmed the formation of single phase Ca3Co4O9 at a sintering temperature of 1073 K, and it is also confirmed in the thermal analysis. SEM images indicate the presence of diffused microporous sphere like morphology and the grain sizes are in the range of 150-300 nm. Optical properties of Ca3Co4O9 ceramic show a band gap at an energy level of 2.10 eV. A maximum electrical resistivity of 0.002 mΩ cm was exhibited by Ca3Co4O9 that was decreased to 0.0012 mΩ cm, when the temperature increased from 300 K to 473 K. Dielectric studies were conducted at various temperatures from room temperature to 673 K and the results indicate that the space charge polarization contributes to the conduction mechanism. It also shows that the dielectric relaxation with activation energy is 0.96 eV. The magnetic properties as a function of temperature represent the ferri-paramagnetic phase transition at above 50 K. M-H curve shows the hysteresis loop with saturation magnetization (Ms) and confirms the presence of soft magnetic materials.

On the influence of DC electric fields on the aerosol assisted chemical vapor deposition growth of photoactive titanium dioxide thin films.

PubMed

Romero, Luz; Binions, Russell

2013-11-05

Titanium dioxide thin films were deposited on fluorine doped tin oxide glass substrate from the electric field assisted aerosol chemical vapor deposition (EACVD) reaction of titanium isopropoxide (TTIP, Ti(OC3H7)4) in toluene on glass substrates at a temperature of 450 °C. DC electric fields were generated by applying a potential difference between the electrodes of the transparent coated oxide coated glass substrates during the deposition. The deposited films were characterized using scanning electron microscopy, X-ray diffraction, atomic force microscopy, Raman spectroscopy, and UV-vis spectroscopy. The photoactivity and hydrophilicity of the deposited films were also analyzed using a dye-ink test and water-contact angle measurements. The characterization work revealed that the incorporation of DC electric fields produced significant reproducible changes in the film microstructure, preferred crystallographic orientation, roughness, and film thickness. Photocatalytic activity was calculated from the half-time (t1/2) or time taken to degrade 50% of the initial resazurin dye concentration. A large improvement in photocatalytic activity was observed for films deposited using an electric field with a strong orientation in the (004) direction (t1/2 17 min) as compared to a film deposited with no electric field (t1/2 40 min).

Synthesis, spectroscopic characterization, thermal analysis and electrical conductivity studies of Mg(II), Ca(II), Sr(II) and Ba(II) vitamin B2 complexes

NASA Astrophysics Data System (ADS)

Refat, Moamen S.; Moussa, Mohamed A. A.; Mohamed, Soha F.

2011-05-01

Riboflavin (RF) complexes of Mg(II), Ca(II), Sr(II) and Ba(II) were successfully synthesized. Structures of metal complexes obtained were confirmed and characterized by elemental analysis, molar conductance, and infrared spectra. DC electrical conductivity measurements indicated that the alkaline earth metal (II) complexes of RF ligand are non-electrolytes. Elemental analysis of chelates suggest that the metal(II) ligand ratio is 1:2 with structure formula as [M(RF) 2( X) 2]· nH 2O. Infrared assignments clearly show that RF ligand coordinated as a bidentate feature through azomethine nitrogen of pyrazine ring and C dbnd O of pyrimidine-2,4-dione. Thermal analyses of Mg(II), Ca(II), Sr(II) and Ba(II) complexes were investigated using (TG/DSC) under atmospheric nitrogen between 30 and 800 °C. The surface morphology of the complexes was studied by SEM. The electrical conductivities of RF and its metal complexes were also measured with DC electrical conductivity in the temperature range from room to 483 K.

Model analysis and electrical characterization of atmospheric pressure cold plasma jet in pin electrode configuration

NASA Astrophysics Data System (ADS)

Deepak, G. Divya; Joshi, N. K.; Prakash, Ram

2018-05-01

In this study, both model analysis and electrical characterization of a dielectric barrier discharge based argon plasma jet have been carried at atmospheric pressure in a pin electrode configuration. The plasma and fluid dynamics modules of COMSOL multi-physics code have been used for the modeling of the plasma jet. The plasma parameters, such as, electron density, electron temperature and electrical potential have been analyzed with respect to the electrical parameters, i.e., supply voltage and supply frequency with and without the flow of gas. In all the experiments, gas flow rate has been kept constant at 1 liter per minute. This electrode configuration is subjected to a range of supply frequencies (10-25 kHz) and supply voltages (3.5-6.5 kV). The power consumed by the device has been estimated at different applied combinations (supply voltage & frequency) for optimum power consumption at maximum jet length. The maximum power consumed by the device in this configuration for maximum jet length of ˜26 mm is just ˜1 W.

Characterization of a dielectric barrier discharge in contact with liquid and producing a plasma activated water

NASA Astrophysics Data System (ADS)

Neretti, G.; Taglioli, M.; Colonna, G.; Borghi, C. A.

2017-01-01

In this work a low-temperature plasma source for the generation of plasma activated water (PAW) is developed and characterized. The plasma reactor was operated by means of an atmospheric-pressure air dielectric barrier discharge (DBD). The plasma generated is in contact with the water surface and is able to chemically activate the liquid medium. Electrodes were supplied by both sinusoidal and nanosecond-pulsed voltage waveforms. Treatment times were varied from 2 to 12 min to increase the energy dose released to the water by the DBD plasma. The physics of the discharge was studied by means of electrical, spectroscopic and imaging diagnostics. The interaction between the plasma and the liquid was investigated as well. Temperature and composition of the treated water were detected. Images of the discharges showed a filamentary behaviour in the sinusoidal case and a more homogeneous behaviour in the nanosecond-pulsed one. The images and the electrical measurements allowed to evaluate an average electron number density of about 4  ×  1019 and 6  ×  1017 m-3 for the sinusoidal and nanosecond-pulsed discharges respectively. Electron temperatures in the range of 2.1÷2.6 eV were measured by using spectroscopic diagnostics. Rotational temperatures in the range of 318-475 K were estimated by fitting synthetic spectra with the measured ones. Water temperature and pH level did not change significantly after the exposure to the DBD plasma. The production of ozone and hydrogen peroxide within the water was enhanced by increasing the plasma treatment time and the energy dose. Numerical simulations of the nanosecond-pulsed discharge were performed by using a self-consistent coupling of state-to-state kinetics of the air mixture with the Boltzmann equation of free electron kinetics. Temporal evolution of the electron energy distribution function shows departure from the Maxwellian distribution especially during the afterglow phase of the discharge. When limited deviations from Maxwellian distribution were observed, calculated electron temperature is in good agreement with the one measured by means of spectroscopic diagnostics. Computed temporal evolution of the energy delivered to the discharge is comparable with the one obtained from electrical measurements. The electrical discharges supplied by both voltage waveforms produce plasma activated water with negligible thermal effects and pH variations.

Single-source-precursor synthesis of dense SiC/HfCxN1-x-based ultrahigh-temperature ceramic nanocomposites

NASA Astrophysics Data System (ADS)

Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; Guillon, Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

2014-10-01

A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfCxN1-x-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfCxN1-x-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfCxN1-x-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm-1, the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm-1.A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfCxN1-x-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfCxN1-x-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfCxN1-x-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm-1, the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm-1. Electronic supplementary information (ESI) available: Raman spectroscopy characterization of the SiHfCN-based ceramics. See DOI: 10.1039/c4nr03376k

Characterization of polybenzimidazole (PBI) film at high temperatures

NASA Astrophysics Data System (ADS)

Hammoud, Ahmad N.; Suthar, J. L.

1992-04-01

Polybenzimidazole, a linear thermoplastic polymer with excellent thermal stability and strength retention over a wide range of temperatures, was evaluated for its potential use as the main dielectric in high temperature capacitors. The film was characterized in terms of its dielectric properties in a frequency range of 50 Hz to 100 kilo-Hz. These properties, which include the dielectric constant and dielectric loss, were also obtained in a temperature range from 20 C to 300 C with an electrical stress of 60 Hz, 50 V/mil present. The alternating and direct current breakdown voltages of silicone oil impregnated films as a function of temperature were also determined. The results obtained indicate that while the film remained relatively stable up to 200 C, it exhibited an increase in its dielectric properties as the temperature was raised to 300 C. It was also found that conditioning of the film by heat treatment at 60 C for six hours tended to improve its dielectric and breakdown properties. The results are discussed and conclusions made concerning the suitability of the film as a high temperature capacitor dielectric.

Characterization of polybenzimidazole (PBI) film at high temperatures

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad N.; Suthar, J. L.

1992-01-01

Polybenzimidazole, a linear thermoplastic polymer with excellent thermal stability and strength retention over a wide range of temperatures, was evaluated for its potential use as the main dielectric in high temperature capacitors. The film was characterized in terms of its dielectric properties in a frequency range of 50 Hz to 100 kilo-Hz. These properties, which include the dielectric constant and dielectric loss, were also obtained in a temperature range from 20 C to 300 C with an electrical stress of 60 Hz, 50 V/mil present. The alternating and direct current breakdown voltages of silicone oil impregnated films as a function of temperature were also determined. The results obtained indicate that while the film remained relatively stable up to 200 C, it exhibited an increase in its dielectric properties as the temperature was raised to 300 C. It was also found that conditioning of the film by heat treatment at 60 C for six hours tended to improve its dielectric and breakdown properties. The results are discussed and conclusions made concerning the suitability of the film as a high temperature capacitor dielectric.

High temperature experimental characterization of microscale thermoelectric effects

NASA Astrophysics Data System (ADS)

Favaloro, Tela

Thermoelectric devices have been employed for many years as a reliable energy conversion technology for applications ranging from the cooling of sensors or charge coupled devices to the direct conversion of heat into electricity for remote power generation. However, its relatively low conversion efficiency has limited the implementation of thermoelectric materials for large scale cooling and waste heat recovery applications. Recent advances in semiconductor growth technology have enabled the precise and selective engineering of material properties to improve the thermoelectric figure of merit and thus the efficiency of thermoelectric devices. Accurate characterization at the intended operational temperature of novel thermoelectric materials is a crucial component of the optimization process in order to fundamentally understand material behavior and evaluate performance. The objective of this work is to provide the tools necessary to characterize high efficiency bulk and thin-film materials for thermoelectric energy conversion. The techniques developed here are not bound to specific material or devices, but can be generalized to any material system. Thermoreflectance imaging microscopy has proven to be invaluable for device thermometry owing to its high spatial and temporal resolutions. It has been utilized in this work to create two-dimensional temperature profiles of thermoelectric devices during operation used for performance analysis of novel materials, identification of defects, and visualization of high speed transients in a high-temperature imaging thermostat. We report the development of a high temperature imaging thermostat capable of high speed transient thermoelectric characterization. In addition, we present a noninvasive method for thermoreflectance coefficient calibration ideally suited for vacuum and thus high temperature employment. This is the first analysis of the thermoreflectance coefficient of commonly used metals at high-temperatures. High temperature vacuum thermostats are designed and fabricated with optical imaging capability and interchangeable measurement stages for various electrical and thermoelectric characterizations. We demonstrate the simultaneous measurement of in-plane electrical conductivity and Seebeck coefficient of thin-film or bulk thermoelectric materials. Furthermore, we utilize high-speed circuitry to implement the transient Harman technique and directly determine the cross-plane figure of merit of thin film thermoelectric materials at high temperatures. Transient measurements on thin film devices are subject to complications from the growth substrate, non-ideal contacts and other detrimental thermal and electrical effects. A strategy is presented for optimizing device geometry to mitigate the impact of these parasitics. This design enabled us to determine the cross-plane thermoelectric material properties in a single high temperature measurement of a 25mum InGaAs thin film with embedded ErAs (0.2%) nanoparticles using the bipolar transient Harman technique in conjunction with thermoreflectance thermal imaging. This approach eliminates discrepancies and potential device degradation from the multiple measurements necessary to obtain individual material parameters. Finite element method simulations are used to analyze non-uniform current and temperature distributions over the device area and determine the three dimensional current path for accurate extraction of material properties from the thermal images. Results match with independent measurements of thermoelectric material properties for the same material composition, validating this approach. We apply high magnification thermoreflectance imaging to create temperature maps of vanadium dioxide nanobeams and examine electro-thermal energy conversion along the nanobeam length. The metal to insulator transition of strongly correlated materials is subject to strong lattice coupling which brings about the unique one-dimensional alignment of metal-insulator domains along nanobeams. Many studies have investigated the effects of stress on the metal to insulator transition and hence the phase boundary, but few have directly examined the temperature profile across the metal-insulating interface. Here, thermoreflectance microscopy reveals the underlying behavior of single-crystalline VO2 nanobeams in the phase coexisting regime. We directly observe highly localized alternating Peltier heating and cooling as well as Joule heating concentrated at the domain interfaces, indicating the significance of the domain walls and band offsets. Moreover, we are able to elucidate strain accumulation along the nanobeam and distinguish between two insulating phases of VO 2 through detection of the opposite polarity of their respective thermoreflectance coefficients.

Optimized Characterization of Thermoelectric Generators for Automotive Application

NASA Astrophysics Data System (ADS)

Tatarinov, Dimitri; Wallig, Daniel; Bastian, Georg

2012-06-01

New developments in the field of thermoelectric materials bring the prospect of consumer devices for recovery of some of the waste heat from internal combustion engines closer to reality. Efficiency improvements are expected due to the development of high-temperature thermoelectric generators (TEG). In contrast to already established radioisotope thermoelectric generators, the temperature difference in automotive systems is not constant, and this imposes a set of specific requirements on the TEG system components. In particular, the behavior of the TEGs and interface materials used to link the heat flow from the heat source through the TEG to the heat sink must be examined. Due to the usage patterns of automobiles, the TEG will be subject to cyclic thermal loads, which leads to module degradation. Additionally, the automotive TEG will be exposed to an inhomogeneous temperature distribution, leading to inhomogeneous mechanical loads and reduced system efficiency. Therefore, a characterization rig is required to allow determination of the electrical, thermal, and mechanical properties of such high-temperature TEG systems. This paper describes a measurement setup using controlled adjustment of cold-side and warm-side temperatures as well as controlled feed-in of electrical power for evaluation of TEGs for application in vehicles with combustion engines. The temperature profile in the setup can be varied to simulate any vehicle usage pattern, such as the European standard driving cycle, allowing the power yield of the TEGs to be evaluated for the chosen cycle. The spatially resolved temperature distribution of a TEG system can be examined by thermal imaging. Hotspots or cracks on thermocouples of the TEGs and the thermal resistance of thermal interface materials can also be examined using this technology. The construction of the setup is briefly explained, followed by detailed discussion of the experimental results.

Investigation Results on Solar Array Thermal & Electrical Imbalance Phenomenon on Power Systems Equipped with MPPT

NASA Astrophysics Data System (ADS)

Mercier, F.; Samaniego, B.; Soriano, T.; Beaufils, G.; Fernandez Lisbona, E.; Dettlaff, K.; Jensen, H.

2014-08-01

The thermal / electrical imbalance phenomenon on the satellite solar arrays is a common issue inherent to the negative thermal voltage coefficient of the triple junction cells, which is usually already taken into account with basic precautions on the solar panel layout.In the frame of the ESA TRP study "Investigation on Solar Array thermal and electrical imbalance phenomenon on power systems equipped with Maximum Power Point Tracker (MPPT)" performed by Airbus Defence & Space (former Astrium Toulouse and Ottobrunn) and TERMA, in-depth analyses were conducted for the first time to better understand and characterize the secondary maximum power point phenomenon for various representative mission cases, whether in Earth vicinity or not. With the help of a newly developed detailed thermo-electrical coupled solver and a wide range of solar cell characterizations in flux and temperature, multiple sets of simulations were run to simulate realistic solar panel characteristics.The study showed that no secondary false maximum power point can be created on the solar panel characteristic IV curve for missions around Earth vicinity, at the sole exception of critical shadowing cases. Furthermore, the same conclusions apply for missions up to Mars orbit. The only potential threats come from the missions further than Mars (typically Jupiter missions) where various very high heterogeneities could lead to multiple maxima. This is deeply linked to the LILT (low illumination low temperature) conditions applied to the current solar cell triple junction characteristics and shape. Moreover, thermo-electrical imbalances that do not create secondary power point can still seriously grieve the solar array power output performances. This power loss can however be accurately assessed by the newly developed solver in support of in-development missions like Juice.

Advanced Soldier Thermoelectric Power System for Power Generation from Battlefield Heat Sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hendricks, Terry J.; Hogan, Tim; Case, Eldon D.

2010-09-01

The U.S. military uses large amounts of fuel during deployments and battlefield operations. This project sought to develop a lightweight, small form-factor, soldier-portable advanced thermoelectric (TE) system prototype to recover and convert waste heat from various deployed military equipment (i.e., diesel generators/engines, incinerators, vehicles, and potentially mobile kitchens), with the ultimate purpose of producing power for soldier battery charging, advanced capacitor charging, and other battlefield power applications. The technical approach employed microchannel technology, a unique “power panel” approach to heat exchange/TE system integration, and newly-characterized LAST (lead-antimony-silver-telluride) and LASTT (lead-antimony-silver-tin-telluride) TE materials segmented with bismuth telluride TE materials in designingmore » a segmented-element TE power module and system. This project researched never-before-addressed system integration challenges (thermal expansion, thermal diffusion, electrical interconnection, thermal and electrical interfaces) of designing thin “power panels” consisting of alternating layers of thin, microchannel heat exchangers (hot and cold) sandwiching thin, segmented-element TE power generators. The TE properties, structurally properties, and thermal fatigue behavior of LAST and LASTT materials were developed and characterized such that the first segmented-element TE modules using LAST / LASTT materials were fabricated and tested at hot-side temperatures = 400 °C and cold-side temperatures = 40 °C. LAST / LASTT materials were successfully segmented with bismuth telluride and electrically interconnected with diffusion barrier materials and copper strapping within the module electrical circuit. A TE system design was developed to produce 1.5-1.6 kW of electrical energy using these new TE modules from the exhaust waste heat of 60-kW Tactical Quiet Generators as demonstration vehicles.« less

Method for the thermal characterization, visualization, and integrity evaluation of conducting material samples or complex structures

DOEpatents

Ortiz, Marcos G.

1992-01-01

A method for modeling a conducting material sample or structure (herein called a system) as at least two regions which comprise an electrical network of resistances, for measuring electric resistance between at least two selected pairs of external leads attached to the surface of the system, wherein at least one external lead is attached to the surface of each of the regions, and, using basic circuit theory, for translating measured resistances into temperatures or thermophysical properties in corresponding regions of the system.

Method for the thermal characterization, visualization, and integrity evaluation of conducting material samples or complex structures

DOEpatents

Ortiz, M.G.

1992-11-24

Disclosed is a method for modeling a conducting material sample or structure (herein called a system) as at least two regions which comprise an electrical network of resistances, for measuring electric resistance between at least two selected pairs of external leads attached to the surface of the system, wherein at least one external lead is attached to the surface of each of the regions, and, using basic circuit theory, for translating measured resistances into temperatures or thermophysical properties in corresponding regions of the system. 16 figs.

Human Effectiveness and Risk Characterization of the Electromuscular Incapacitation Device - A Limited Analysis of the TASER. Part 1. Technical Report

DTIC Science & Technology

2005-03-01

factors such as wind, temperature, and precipitation do not affect the dose of electricity delivered since the electricity flows through insulated wires...additional (and perhaps lethal) force. It is unknown if these mechanisms for success will also occur in DoD use. If they do not, and if the complete or...information if it does not display s currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. 1. REPORT DATE (DD-MM-YYYY

Detection of picosecond electrical pulses using the intrinsic Franz{endash}Keldysh effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lampin, J. F.; Desplanque, L.; Mollot, F.

2001-06-25

We report time-resolved measurements of ultrafast electrical pulses propagating on a coplanar transmission line using the intrinsic Franz{endash}Keldysh effect. A low-temperature-grown GaAs layer deposited on a GaAs substrate allows generation and also detection of ps pulses via electroabsorption sampling (EAS). This all-optical method does not require any external sampling probe. A typical rise time of 1.1 ps has been measured. EAS is a good candidate for use in THz characterization of ultrafast devices. {copyright} 2001 American Institute of Physics.

Microstrip resonators for electron paramagnetic resonance experiments

NASA Astrophysics Data System (ADS)

Torrezan, A. C.; Mayer Alegre, T. P.; Medeiros-Ribeiro, G.

2009-07-01

In this article we evaluate the performance of an electron paramagnetic resonance (EPR) setup using a microstrip resonator (MR). The design and characterization of the resonator are described and parameters of importance to EPR and spin manipulation are examined, including cavity quality factor, filling factor, and microwave magnetic field in the sample region. Simulated microwave electric and magnetic field distributions in the resonator are also presented and compared with qualitative measurements of the field distribution obtained by a perturbation technique. Based on EPR experiments carried out with a standard marker at room temperature and a MR resonating at 8.17 GHz, the minimum detectable number of spins was found to be 5×1010 spins/GHz1/2 despite the low MR unloaded quality factor Q0=60. The functionality of the EPR setup was further evaluated at low temperature, where the spin resonance of Cr dopants present in a GaAs wafer was detected at 2.3 K. The design and characterization of a more versatile MR targeting an improved EPR sensitivity and featuring an integrated biasing circuit for the study of samples that require an electrical contact are also discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gholipur, Reza, E-mail: gholipur.reza@gmail.com; Bahari, Ali, E-mail: a.bahari@umz.ac.ir

Highlights: • Glassy Ce{sub x}La{sub 1−x}O{sub y} nanostructure films were grown on Si(1 0 0) substrate using the sol–gel method. • G{sub p} = ωϵ{sub 0}ϵ′ tan(δ) was calculated at different temperatures. • Electrical and structural the Ce{sub x}La{sub 1−x}O{sub y} samples were studied. • The conductivity-temperature study shows that the compound obeys the Arrhenius law. - Abstract: The Ce{sub x}La{sub 1−x}O{sub y} samples are synthesized, characterized and their electrical properties are reported at different molar ratios in the frequency range of 10{sup −1}–10{sup +5} Hz. Ac conductivity and permittivity data are analyzed by using conductivity formalism. The values ofmore » capacitance and tan(δ) were recorded with respect to different frequencies and temperatures. X-ray diffraction (XRD) patterns of the films show that the films posses crystalline phases. Surface morphology of the films is analyzed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The energy dispersive X-ray (EDX) and X-ray photoelectron spectroscopy (XPS) analyses reveal that elemental composition is in right stoichiometry. Electrical characterizations of the Ce{sub x}La{sub 1−x}O{sub y} samples were done by capacitance–voltage (C–V) and current density–voltage (J–V) measurements of MOS structures. Investigation showed high value of k = 44.80 and low leakage current (∼1 × 10{sup −5} A/cm{sup 2}) of the Ce{sub 0.4}La{sub 0.6}O{sub y} film.« less

Crystalline Microporous Organosilicates with Reversed Functionalities of Organic and Inorganic Components for Room-Temperature Gas Sensing.

PubMed

Fabbri, Barbara; Bonoldi, Lucia; Guidi, Vincenzo; Cruciani, Giuseppe; Casotti, Davide; Malagù, Cesare; Bellussi, Giuseppe; Millini, Roberto; Montanari, Luciano; Carati, Angela; Rizzo, Caterina; Montanari, Erica; Zanardi, Stefano

2017-07-26

A deepened investigation on an innovative organic-inorganic hybrid material, referred to as ECS-14 (where ECS = Eni carbon silicates), revealed the possibility to use them as gas sensors. Indeed, among ECS phases, the crystalline state and the hexagonal microplateletlike morphology characteristic of ECS-14 seemed favorable properties to obtain continuous and uniform films. ECS-14 phase was used as functional material in screen-printable compositions and was thus deposited by drop coating for morphological, structural, thermal, and electrical characterizations. Possible operation at room temperature was investigated as technological progress, offering intrinsic safety in sensors working in harsh or industrial environments and avoiding high power consumption of most common sensors based on metal oxide semiconductors. Electrical characterization of the sensors based on ECS-14 versus concentrations of gaseous analytes gave significant results at room temperature in the presence of humidity, thereby demonstrating fundamental properties for a good quality sensor (speed, reversibility, and selectivity) that make them competitive with respect to systems currently in use. Remarkably, we observed functionality reversal of the organic and inorganic components; that is, in contrast to other hybrids, for ECS-14 the functional site has been ascribed to the inorganic phase while the organic component provided structural stability to the material. The sensing mechanism for humidity was also investigated.

COMSOL-Based Modeling and Simulation of SnO2/rGO Gas Sensor for Detection of NO2.

PubMed

Yaghouti Niyat, Farshad; Shahrokh Abadi, M H

2018-02-01

Despite SIESTA and COMSOL being increasingly used for the simulation of the sensing mechanism in the gas sensors, there are no modeling and simulation reports in literature for detection of NO 2 based rGO/SnO 2 sensors. In the present study, we model, simulate, and characterize an NO 2 based rGO/SnO 2 gas sensor using COMSOL by solving the Poisson's equations under associated boundary conditions of mass, heat and electrical transitions. To perform the simulation, we use an exposure model for presenting the required NO 2 , a heat transfer model to obtain a reaction temperature, and an electrical model to characterize the sensor's response in the presence of the gas. We characterize the sensor's response in the presence of different concentrations of NO 2 at different working temperatures and compare the results with the experimental data, reported by Zhang et al. The results from the simulated sensor show a good agreement with the real sensor with some inconsistencies due to differences between the practical conditions in the real chamber and applied conditions to the analytical equations. The results also show that the method can be used to define and predict the behavior of the rGO-based gas sensors before undergoing the fabrication process.

Growth and characterization of single crystal rocksalt LaAs using LuAs barrier layers

NASA Astrophysics Data System (ADS)

Krivoy, E. M.; Rahimi, S.; Nair, H. P.; Salas, R.; Maddox, S. J.; Ironside, D. J.; Jiang, Y.; Dasika, V. D.; Ferrer, D. A.; Kelp, G.; Shvets, G.; Akinwande, D.; Bank, S. R.

2012-11-01

We demonstrate the growth of high-quality, single crystal, rocksalt LaAs on III-V substrates; employing thin well-behaved LuAs barriers layers at the III-V/LaAs interfaces to suppress nucleation of other LaAs phases, interfacial reactions between GaAs and LaAs, and polycrystalline LaAs growth. This method enables growth of single crystal epitaxial rocksalt LaAs with enhanced structural and electrical properties. Temperature-dependent resistivity and optical reflectivity measurements suggest that epitaxial LaAs is semimetallic, consistent with bandstructure calculations in literature. LaAs exhibits distinct electrical and optical properties, as compared with previously reported rare-earth arsenide materials, with a room-temperature resistivity of ˜459 μΩ-cm and an optical transmission window >50% between ˜3-5 μm.

Trajectory, Development, and Temperature of Spark Kernels Exiting into Quiescent Air (Preprint)

DTIC Science & Technology

2012-04-01

spark is an electrical discharge in which a portion of the energy is transferred to plasma and the surrounding fluid and the remaining portion is lost...integrated radiation intensity, λα λ λ λλλ dII ∫=∆ 2 1 . (1) αλ is the spectral absorption coefficient which accounts for variations...premixed hydrogen flame anchored to a Hencken burner. This flame has been well characterized by CARS measurements26,27. A temperature profile26 was assumed

Effects of poling over the orthorhombic-tetragonal phase transition temperature in compositionally homogeneous (K,Na)NbO3-based ceramics

NASA Astrophysics Data System (ADS)

Morozov, M. I.; Kungl, H.; Hoffmann, M. J.

2011-03-01

Li-, Ta-, and Mn-modified (K,Na)NbO3 ceramics with various compositional homogeneity have been prepared by conventional and precursor methods. The homogeneous ceramic has demonstrated a sharper peak in temperature dependent piezoelectric response. The dielectric and piezoelectric properties of the homogeneous ceramics have been characterized at the experimental subcoercive electric fields near the temperature of the orthorhombic-tetragonal phase transition with respect to poling in both phases. Poling in the tetragonal phase is shown to enhance the low-signal dielectric and piezoelectric properties in the orthorhombic phase.

Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes

NASA Astrophysics Data System (ADS)

Pathak, C. S.; Garg, Manjari; Singh, J. P.; Singh, R.

2018-05-01

The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0–4.4 and 0.50–0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.

Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majid, S. S., E-mail: suhailphy276@gmail.com; Rahman, F.; Shukla, D. K.

2015-06-24

We present here the structural and electrical properties of the thin films of V{sub 2}O{sub 3} (Vanadium sesquioxide) and V{sub 5}O{sub 9}. Both these oxide phases, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}, have beenachieved on (001) orientedSi substrate using the V{sub 2}O{sub 5} target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V{sub 2}O{sub 3} and V{sub 5}O{sub 9} phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulatormore » transitions (MIT) for both the films, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}.« less

Investigation of reliability attributes and accelerated stress factors of terrestrial solar cells. First annual report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prince, J.L.; Lathrop, J.W.

1979-05-01

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, I/sub sc/, open circuit voltage, V/sub oc/, and output power, voltage, and current at the maximum power point, P/sub m/, V/sub m/, and I/sub m/ respectively. Incorporated in the report are the distributions ofmore » the prestress electrical data for all cell types. Data was also obtained on cell series and shunt resistance. Significant differences in the response to the various stress tests was observed between cell types. On the basis of the experience gained in this research work, a suggested Reliability Qualification Test Schedule was developed.« less

D.C. electrical conductivity and conduction mechanism of some azo sulfonyl quinoline ligands and uranyl complexes.

PubMed

El-Ghamaz, N A; Diab, M A; El-Sonbati, A Z; Salem, O L

2011-12-01

Supramolecular coordination of dioxouranium(VI) heterochelates 5-sulphono-7-(4'-X phenylazo)-8-hydroxyquinoline HL(n) (n=1, X=CH(3); n=2, X=H; n=3, X=Cl; n=4, X=NO(2)) have been prepared and characterized with various physico-chemical techniques. The infrared spectral studies showed a monobasic bidentate behavior with the oxygen and azonitrogen donor system. The temperature dependence of the D.C. electrical conductivity of HL(n) ligands and their uranyl complexes has been studied in the temperature range 305-415 K. The thermal activation energies E(a) for HL(n) compounds were found to be in the range 0.44-0.9 eV depending on the nature of the substituent X. The complexation process decreased E(a) values to the range 0.043-045 eV. The electrical conduction mechanism has been investigated for all samples under investigation. It was found to obey the variable range hopping mechanism (VRH). Copyright © 2011 Elsevier B.V. All rights reserved.

Synthesis, growth, spectral, electrical, mechanical and thermal characterization of a potential optical material: γ-glycine single crystal

NASA Astrophysics Data System (ADS)

Sivakumar, N.; Jayavel, R.; Anbalagan, G.; Yadav, R. R.

2018-06-01

Gamma glycine, an organic material was grown by slow solvent evaporation method. Conventional polythermal method was employed in the temperature range, 30-50 °C to obtain the solubility and the metastable zonewidth. The crystal and molecular structures were analyzed by X-ray powder diffraction, FT-IR and FT-Raman spectral studies. Optical refractive index was determined by prism coupling technique and was found to be 1.4488. Electrical properties such as ac conductivity and activation energy were studied for different temperatures in the frequency range from 40 Hz to 6 MHz. The dc electrical conductivity was estimated from the Cole-Cole plot and the values were found to be 2.19 × 10-6 Sm-1 at 353K and 1.46 × 10-6 Sm-1 at 373K respectively. Mechanical studies on the grown crystal revealed that the material belongs to soft materials category. Thermal conductivity and specific heat capacities were estimated by Hot Disk Thermal Constants Analyzer.

Improving the Thermoelectric Properties of Polyaniline by Introducing Poly(3,4-ethylenedioxythiophene)

NASA Astrophysics Data System (ADS)

Wang, Xiao Yang; Liu, Cheng Yan; Miao, Lei; Gao, Jie; Chen, Yu

2016-03-01

By using the parent monomers, 3,4-ethylenedioxythiophene and aniline, a series of nanocomposites consisting of different mass ratios of polyaniline (PANI) to poly(3,4-ethylenedioxythiophene) (PEDOT) have been successfully prepared in hydrochloric acid solution through oxidative polymerization, then redoped with p-toluenesulfonic acid ( p-TSA). Firstly, PEDOT nanoparticles were fabricated via chemical oxidation polymerization in reverse (water-in-oil) microemulsions. Then, PANI-doped PEDOT nanoparticles were formed by oxidative polymerization of aniline to form PANI/PEDOT nanofibers. The resulting nanostructured components were characterized by scanning electron microscopy (SEM) and a series of spectroscopic methods. The presence of PEDOT increased the room-temperature electrical conductivity of the PANI/PEDOT nanocomposites by more than two orders of magnitude in comparison with the parent PANI. Moreover, the PANI/PEDOT nanocomposites showed better thermoelectric properties than PANI. Different concentrations of p-TSA also affected the electrical conductivity and Seebeck coefficient of the nanocomposites. With increasing temperature, both the electrical conductivity and Seebeck coefficient increased.

Preparation and characterization of copper telluride thin films by modified chemical bath deposition (M-CBD) method

NASA Astrophysics Data System (ADS)

Pathan, H. M.; Lokhande, C. D.; Amalnerkar, D. P.; Seth, T.

2003-09-01

Copper telluride thin films were deposited using modified chemical method using copper(II) sulphate; pentahydrate [CuSO 4·5H 2O] and sodium tellurite [Na 2TeO 3] as cationic and anionic sources, respectively. Modified chemical method is based on the immersion of the substrate into separately placed cationic and anionic precursors. The preparative conditions such as concentration, pH, immersion time, immersion cycles, etc. were optimized to get good quality copper telluride thin films at room temperature. The films have been characterized for structural, compositional, optical and electrical transport properties by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), Rutherford back scattering (RBS), optical absorption/transmission, electrical resistivity and thermoemf measurement techniques.

Seeded Physical Vapor Transport of Cadmium-Zinc Telluride Crystals: Growth and Characterization

NASA Technical Reports Server (NTRS)

Palosz, W.; George, M. A.; Collins, E. E.; Chen, K.-T.; Zhang, Y.; Burger, A.

1997-01-01

Crystals of Cd(1-x)Zn(x)Te with x = 0.2 and 40 g in weight were grown on monocrystalline cadmium-zinc telluride seeds by closed-ampoule physical vapor transport with or without excess (Cd + Zn) in the vapor phase. Two post-growth cool-down rates were used. The crystals were characterized using low temperature photoluminescence, atomic force microscopy, chemical etching, X-ray diffraction and electrical measurements. No formation of a second, ZnTe-rich phase was observed.

Short review on chemical bath deposition of thin film and characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mugle, Dhananjay, E-mail: dhananjayforu@gmail.com; Jadhav, Ghanshyam, E-mail: ghjadhav@rediffmail.com

2016-05-06

This reviews the theory of early growth of the thin film using chemical deposition methods. In particular, it critically reviews the chemical bath deposition (CBD) method for preparation of thin films. The different techniques used for characterizations of the chemically films such as X-ray diffractometer (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Electrical conductivity and Energy Dispersive Spectroscopy (EDS) are discussed. Survey shows the physical and chemical properties solely depend upon the time of deposition, temperature of deposition.

In situ evaluation of water and energy consumptions at the end use level: The influence of flow reducers and temperature in baths.

PubMed

Matos, C; Briga-Sá, A; Bentes, I; Faria, D; Pereira, S

2017-05-15

Nowadays, water and energy consumption is intensifying every year in most of the countries. This perpetual increase will not be supportable in the long run, making urgently to manage these resources on a sustainable way. Domestic consumptions of water and electric energy usually are related and it's important to study that relation, identifying opportunities for use efficient improvement. In fact, without an understanding of water-energy relations, there are water efficiency measures that may lead to unintentional costs in the energy efficiency field. In order to take full advantage of combined effect between water and energy water management methodologies, it is necessary to collect data to ensure that the efforts are directed through the most effective paths. This paper presents a study based in the characterization, measurement and analysis of water and electricity consumption in a single family house (2months period) in order to find an interdependent relationship between consumptions at the end user level. The study was carried out on about 200 baths, divided in four different scenarios where the influence of two variables was tested: the flow reducer valve and the bath temperature. Data showed that the presence of flow reducer valve decreased electric energy consumption and water consumption, but increased the bath duration. Setting a lower temperature in water-heater, decreased electric consumption, water consumption and bath duration. Analysing the influence of the flow reducer valve and 60°C temperature simultaneously, it was concluded that it had a significant influence on electric energy consumption and on the baths duration but had no influence on water consumption. Copyright © 2017 The Author(s). Published by Elsevier B.V. All rights reserved.

Application of GeO2 nanoparticle as electrically erasable memory and its photo catalytic behaviour

NASA Astrophysics Data System (ADS)

Seal, M.; Bose, N.; Mukherjee, S.

2018-06-01

Germanium oxide nanoparticle is synthesized from bulk GeO2 powder through hydrothermal technique. The structural characterization of the prepared sample is performed with x-ray Diffraction and Transmission Electron Microscope. From the PL emission spectra and x-ray photoelectron spectra, the existence of oxygen defects inside the sample is confirmed. Thermogravimetric (TG) analysis of the sample shows that there is no weight loss with increase in temperature instead of a very little weight gain. An estimation of Oxygen vacancy concentration is made from the amount of weight gain as measured during TG analysis. The sample is also characterized with PE loop tracer, which indicates that GeO2 nanoparticle is able to show hysteresis loop regarding variation of Polarization with electric field. Such phenomenon implies that the sample can be used as electrically erasable memory device. Further, GeO2 nanoparticle is also exploited as photo catalyst to degrade Methylene Blue (MB) solution in the presence of ultraviolet ray. This phenomenon is also explained with oxygen vacancy.

Preparation and characterization of carbon nanofluid by a plasma arc nanoparticles synthesis system

PubMed Central

2011-01-01

Heat dissipation from electrical appliances is a significant issue with contemporary electrical devices. One factor in the improvement of heat dissipation is the heat transfer performance of the working fluid. In this study, we used plasma arc technology to produce a nanofluid of carbon nanoparticles dispersed in distilled water. In a one-step synthesis, carbon was simultaneously heated and vaporized in the chamber, the carbon vapor and particles were then carried to a collector, where cooling furnished the desired carbon/water nanofluid. The particle size and shape were determined using the light-scattering size analyzer, SEM, and TEM. Crystal morphology was examined by XRD. Finally, the characterization include thermal conductivity, viscosity, density and electric conductivity were evaluated by suitable instruments under different temperatures. The thermal conductivity of carbon/water nanofluid increased by about 25% at 50°C compared to distilled water. The experimental results demonstrated excellent thermal conductivity and feasibility for manufacturing of carbon/water nanofluids. PMID:21711828

High-yield transfer printing of metal-insulator-metal nanodiodes.

PubMed

Bareiss, Mario; Ante, Frederik; Kälblein, Daniel; Jegert, Gunther; Jirauschek, Christian; Scarpa, Giuseppe; Fabel, Bernhard; Nelson, Edward M; Timp, Gregory; Zschieschang, Ute; Klauk, Hagen; Porod, Wolfgang; Lugli, Paolo

2012-03-27

Nanoscale metal-insulator-metal (MIM) diodes represent important devices in the fields of electronic circuits, detectors, communication, and energy, as their cutoff frequencies may extend into the "gap" between the electronic microwave range and the optical long-wave infrared regime. In this paper, we present a nanotransfer printing method, which allows the efficient and simultaneous fabrication of large-scale arrays of MIM nanodiode stacks, thus offering the possibility of low-cost mass production. In previous work, we have demonstrated the successful transfer and electrical characterization of macroscopic structures. Here, we demonstrate for the first time the fabrication of several millions of nanoscale diodes with a single transfer-printing step using a temperature-enhanced process. The electrical characterization of individual MIM nanodiodes was performed using a conductive atomic force microscope (AFM) setup. Our analysis shows that the tunneling current is the dominant conduction mechanism, and the electrical measurement data agree well with experimental data on previously fabricated microscale diodes and numerical simulations. © 2012 American Chemical Society

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry D., Jr.

2004-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

High temperature electrical energy storage: advances, challenges, and frontiers.

PubMed

Lin, Xinrong; Salari, Maryam; Arava, Leela Mohana Reddy; Ajayan, Pulickel M; Grinstaff, Mark W

2016-10-24

With the ongoing global effort to reduce greenhouse gas emission and dependence on oil, electrical energy storage (EES) devices such as Li-ion batteries and supercapacitors have become ubiquitous. Today, EES devices are entering the broader energy use arena and playing key roles in energy storage, transfer, and delivery within, for example, electric vehicles, large-scale grid storage, and sensors located in harsh environmental conditions, where performance at temperatures greater than 25 °C are required. The safety and high temperature durability are as critical or more so than other essential characteristics (e.g., capacity, energy and power density) for safe power output and long lifespan. Consequently, significant efforts are underway to design, fabricate, and evaluate EES devices along with characterization of device performance limitations such as thermal runaway and aging. Energy storage under extreme conditions is limited by the material properties of electrolytes, electrodes, and their synergetic interactions, and thus significant opportunities exist for chemical advancements and technological improvements. In this review, we present a comprehensive analysis of different applications associated with high temperature use (40-200 °C), recent advances in the development of reformulated or novel materials (including ionic liquids, solid polymer electrolytes, ceramics, and Si, LiFePO 4 , and LiMn 2 O 4 electrodes) with high thermal stability, and their demonstrative use in EES devices. Finally, we present a critical overview of the limitations of current high temperature systems and evaluate the future outlook of high temperature batteries with well-controlled safety, high energy/power density, and operation over a wide temperature range.

Structural, dielectric and impedance characteristics of lanthanum-modified BiFeO3-PbTiO3 electronic system

NASA Astrophysics Data System (ADS)

Pradhan, S. K.; Das, S. N.; Bhuyan, S.; Behera, C.; Padhee, R.; Choudhary, R. N. P.

2016-06-01

A lanthanum-modified BiFeO3-PbTiO3 binary electronic system has been fabricated by a high-temperature solid-state reaction technique. The structural, dielectric and electrical properties of a single phase of multicomponent system are investigated to understand its ferroelectrics as well as relaxation behavior. The X-ray diffraction structural analysis substantiates the formation of a new stable phase of tetragonal system (with a large c/a ratio 1.23) without any trace of impurity phase. The electrical behavior of the processed material is characterized through impedance spectroscopy in a wide frequency range (1 kHz-1 MHz) over a temperature range of 25-500 °C. It is observed that the substitution of lanthanum-modified PbTiO3 (PT) into BiFeO3 (BFO) reveals enviable multiferroic property which is evident from the ME coefficient measurement and ferroelectric loop. It also reduces the electrical leakage current or tangent loss. The ac conductivity of the solid solution increases with increase in frequency in the low-temperature region. The impedance spectroscopy of the synthesized material reflects the dielectric relaxation of non-Debye type.

High-temperature optical fiber sensors for characterization of advanced composite aerospace materials

NASA Astrophysics Data System (ADS)

Wavering, Thomas A.; Greene, Jonathan A.; Meller, Scott A.; Bailey, Timothy A.; Kozikowski, Carrie L.; Lenahan, Shannon M.; Murphy, Kent A.; Camden, Michael P.; Simmons, Larry W.

1999-01-01

Optical fiber sensors have numerous advantages over conventional sensing technologies. One such advantage is that optical fiber sensors can operate in high temperature environments. While most conventional electrical-based sensors do not operate reliably over 300 degrees C, fused silica based optical fiber sensors can survive up to 900 degrees C, and sapphire based optical fiber sensors can survive up to 2000 degrees C. Using both fused silica and sapphire technologies, we present result for high temperature strain, pressure, and temperature sensors using Extrinsic Fabry-Perot INterferometric-based and Bragg grating sensors. High temperature strain and temperature sensors were used to conduct fatigue testing of composite coupons at 600 degrees C. The results from these specific high temperature applications are presented along with future applications and directions for these sensors.

Electrical and magnetic properties of conductive Cu-based coated conductors

NASA Astrophysics Data System (ADS)

Aytug, T.; Paranthaman, M.; Thompson, J. R.; Goyal, A.; Rutter, N.; Zhai, H. Y.; Gapud, A. A.; Ijaduola, A. O.; Christen, D. K.

2003-11-01

The development of YBa2Cu3O7-δ (YBCO)-based coated conductors for electric power applications will require electrical and thermal stabilization of the high-temperature superconducting (HTS) coating. In addition, nonmagnetic tape substrates are an important factor in order to reduce the ferromagnetic hysteresis energy loss in ac applications. We report progress toward a conductive buffer layer architecture on biaxially textured nonmagnetic Cu tapes to electrically couple the HTS layer to the underlying metal substrate. A protective Ni overlayer, followed by a single buffer layer of La0.7Sr0.3MnO3, was employed to avoid Cu diffusion and to improve oxidation resistance of the substrate. Property characterizations of YBCO films on short prototype samples revealed self-field critical current density (Jc) values exceeding 2×106 A/cm2 at 77 K and good electrical connectivity. Magnetic hysteretic loss due to Ni overlayer was also investigated.

Characterization by spectroscopic Ellipsometry, the physical properties of silver nanoparticles.

NASA Astrophysics Data System (ADS)

Coanga, Jean-Maurice

2013-04-01

Physicists are able to change their minds through their experiments. I think it is time to go kick the curse and go further in research if we want a human future. I work in the Nano-Optics and Plasmonics research. I defined with ellipsomètrie the structure of new type of Nano particles of silver. It's same be act quickly to replace the old dirty leaded electronic-connexion chip and by the other hand to find a new way for the heath care of cancer disease by nanoparticles the next killers of bad cells. Silver nanoparticle layers are obtained by Spark Plasma Sintering are investigated as an alternative to lead alloy based material for solder joint in power mechatronics modules. These layers are characterized by mean of conventional techniques that is the dilatometry technique, the resistivity measurement through the van der Pauw method, and the flash laser technique. Furthermore, the nanoparticles of silver layer are deeply studied by UV-Visible spectroscopic ellipsometry. Spectroscopic angles parameters are determined in function of temperature and dielectric constants are deduced and analyzed through an optical model which takes into account a Drude and a Lorentz component within the Bruggeman effective medium approximation (EMA). The relaxation times and the electrical conductivity are plot in function of temperature. The obtained electrical conductivity give significant result in good agreement to those reported by four points electrical measurement method.

Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

An Extensive Unified Thermo-Electric Module Characterization Method

PubMed Central

Attivissimo, Filippo; Guarnieri Calò Carducci, Carlo; Lanzolla, Anna Maria Lucia; Spadavecchia, Maurizio

2016-01-01

Thermo-Electric Modules (TEMs) are being increasingly used in power generation as a valid alternative to batteries, providing autonomy to sensor nodes or entire Wireless Sensor Networks, especially for energy harvesting applications. Often, manufacturers provide some essential parameters under determined conditions, like for example, maximum temperature difference between the surfaces of the TEM or for maximum heat absorption, but in many cases, a TEM-based system is operated under the best conditions only for a fraction of the time, thus, when dynamic working conditions occur, the performance estimation of TEMs is crucial to determine their actual efficiency. The focus of this work is on using a novel procedure to estimate the parameters of both the electrical and thermal equivalent model and investigate their relationship with the operating temperature and the temperature gradient. The novelty of the method consists in the use of a simple test configuration to stimulate the modules and simultaneously acquire electrical and thermal data to obtain all parameters in a single test. Two different current profiles are proposed as possible stimuli, which use depends on the available test instrumentation, and relative performance are compared both quantitatively and qualitatively, in terms of standard deviation and estimation uncertainty. Obtained results, besides agreeing with both technical literature and a further estimation method based on module specifications, also provides the designer a detailed description of the module behavior, useful to simulate its performance in different scenarios. PMID:27983575

An Extensive Unified Thermo-Electric Module Characterization Method.

PubMed

Attivissimo, Filippo; Guarnieri Calò Carducci, Carlo; Lanzolla, Anna Maria Lucia; Spadavecchia, Maurizio

2016-12-13

Thermo-Electric Modules (TEMs) are being increasingly used in power generation as a valid alternative to batteries, providing autonomy to sensor nodes or entire Wireless Sensor Networks, especially for energy harvesting applications. Often, manufacturers provide some essential parameters under determined conditions, like for example, maximum temperature difference between the surfaces of the TEM or for maximum heat absorption, but in many cases, a TEM-based system is operated under the best conditions only for a fraction of the time, thus, when dynamic working conditions occur, the performance estimation of TEMs is crucial to determine their actual efficiency. The focus of this work is on using a novel procedure to estimate the parameters of both the electrical and thermal equivalent model and investigate their relationship with the operating temperature and the temperature gradient. The novelty of the method consists in the use of a simple test configuration to stimulate the modules and simultaneously acquire electrical and thermal data to obtain all parameters in a single test. Two different current profiles are proposed as possible stimuli, which use depends on the available test instrumentation, and relative performance are compared both quantitatively and qualitatively, in terms of standard deviation and estimation uncertainty. Obtained results, besides agreeing with both technical literature and a further estimation method based on module specifications, also provides the designer a detailed description of the module behavior, useful to simulate its performance in different scenarios.

Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height

NASA Astrophysics Data System (ADS)

Jiang, Yifan; Sung, Woongje; Baliga, Jayant; Wang, Sizhen; Lee, Bongmook; Huang, Alex

2018-02-01

This paper reports the study of the fabrication and characterization results of 10-kilo-volt (kV) 4H-SiC merged PiN/Schottky rectifiers. A metal contact process was developed to make the Schottky contact on n-type SiC and ohmic contact on p-type SiC at the same time. The diodes with different Schottky contact width were fabricated and characterized for comparison. With the improvement quality of the Schottky contact and the passivation layer, the devices show low leakage current up to 10 kV. The on-state characteristics from room temperature to elevated temperature (423 K) were demonstrated and compared between structures with different Schottky contact width.

Characterization of a Low-Cost Multiparameter Sensor for Solar Resource Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Habte, Aron M; Sengupta, Manajit; Andreas, Afshin M

Low-cost, multiparameter sensing and measurement devices enable cost-effective monitoring of the functional, operational reliability, efficiency, and resiliency of the electric grid. The National Renewable Research Laboratory (NREL) Solar Radiation Research Laboratory (SRRL), in collaboration with Arable Labs, Inc., deployed Arable Lab's Mark multiparameter sensor system. The device measures the downwelling and upwelling shortwave solar resource and longwave radiation, humidity, air temperature, and ground temperature. The system is also equipped with six downward-and upward-facing narrowband spectrometer channels that measure spectral radiation and surface spectral reflectance. This study describes the shortwave calibration, characterization, and validation of measurement accuracy of this instrument bymore » comparison with existing instruments that are part of NREL-SRRL's Baseline Measurement System.« less

Characterization of the Hole Transport and Electrical Properties in the Small-Molecule Organic Semiconductors

NASA Astrophysics Data System (ADS)

Wang, L. G.; Zhu, J. J.; Liu, X. L.; Cheng, L. F.

2017-10-01

In this paper, we investigate the hole transport and electrical properties in a small-molecule organic material N, N'-bis(1-naphthyl)- N, N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB), which is frequently used in organic light-emitting diodes. It is shown that the thickness-dependent current density versus voltage ( J- V) characteristics of sandwich-type NPB-based hole-only devices cannot be described well using the conventional mobility model without carrier density or electric field dependence. However, a consistent and excellent description of the thickness-dependent and temperature-dependent J- V characteristics of NPB hole-only devices can be obtained with a single set of parameters by using our recently introduced improved model that take into account the temperature, carrier density, and electric field dependence of the mobility. For the small-molecule organic semiconductor studied, we find that the width of the Gaussian distribution of density of states σ and the lattice constant a are similar to the values reported for conjugated polymers. Furthermore, we show that the boundary carrier density has an important effect on the J- V characteristics. Both the maximum of carrier density and the minimum of electric field appear near the interface of NPB hole-only devices.

Synthesis, characterization and low temperature electrical conductivity of Polyaniline/NiFe2O4 nanocomposites

NASA Astrophysics Data System (ADS)

Prasanna, G. D.; Prasad, V. B.; Jayanna, H. S.

2015-02-01

Conducting polymer/ferrite nanocomposites with an organized structure provide a new functional hybrid between organic and inorganic materials. The most popular among the conductive polymers is the polyaniline (PANI) due to its wide application in different fields. In the present work nickel ferrite (NiFe2O4) nanoparticles were prepared by sol-gel citrate-nitrate method with an average size of 21.6nm. PANI/NiFe2O4 nanoparticles were synthesized by a simple general and inexpensive in-situ polymerization in the presence of NiFe2O4 nanoparticles. The effects of NiFe2O4 nanoparticles on the dc-electrical properties of polyaniline were investigated. The structural components in the nanocomposites were identified from Fourier Transform Infrared (FTIR) spectroscopy. The crystalline phase of nanocomposites was characterized by X-Ray Diffraction (XRD). The Scanning Electron Micrograph (SEM) reveals that there was some interaction between the NiFe2O4 particles and polyaniline and the nanocomposites are composed of polycrystalline ferrite nanoparticles and PANI. The dc conductivity of polyaniline/NiFe2O4 nanocomposites have been measured as a function of temperature in the range of 80K to 300K. It is observed that the room temperature conductivity cRT decreases with increase in the relative content of NiFe2O4. The experimental data reveals that the resistivity increases for all composites with decrease of temperature exhibiting semiconductor behaviour.

Review: Some low-frequency electrical methods for subsurface characterization and monitoring in hydrogeology

NASA Astrophysics Data System (ADS)

Revil, A.; Karaoulis, M.; Johnson, T.; Kemna, A.

2012-06-01

Low-frequency geoelectrical methods include mainly self-potential, resistivity, and induced polarization techniques, which have potential in many environmental and hydrogeological applications. They provide complementary information to each other and to in-situ measurements. The self-potential method is a passive measurement of the electrical response associated with the in-situ generation of electrical current due to the flow of pore water in porous media, a salinity gradient, and/or the concentration of redox-active species. Under some conditions, this method can be used to visualize groundwater flow, to determine permeability, and to detect preferential flow paths. Electrical resistivity is dependent on the water content, the temperature, the salinity of the pore water, and the clay content and mineralogy. Time-lapse resistivity can be used to assess the permeability and dispersivity distributions and to monitor contaminant plumes. Induced polarization characterizes the ability of rocks to reversibly store electrical energy. It can be used to image permeability and to monitor chemistry of the pore water-minerals interface. These geophysical methods, reviewed in this paper, should always be used in concert with additional in-situ measurements (e.g. in-situ pumping tests, chemical measurements of the pore water), for instance through joint inversion schemes, which is an area of fertile on-going research.

Understanding and Eliminating Hysteresis for Highly Efficient Planar Perovskite Solar Cells

DOE PAGES

Wang, Changlei; Xiao, Chuanxiao; Yu, Yue; ...

2017-05-11

Through detailed device characterization using cross-sectional Kelvin probe force microscopy (KPFM) and trap density of states measurements, we identify that the J-V hysteresis seen in planar organic-inorganic hybrid perovskite solar cells (PVSCs) using SnO 2 electron selective layers (ESLs) synthesized by low-temperature plasma-enhanced atomic-layer deposition (PEALD) method is mainly caused by the imbalanced charge transportation between the ESL/perovskite and the hole selective layer/perovskite interfaces. We find that this charge transportation imbalance is originated from the poor electrical conductivity of the low-temperature PEALD SnO 2 ESL. We further discover that a facile low-temperature thermal annealing of SnO 2 ESLs can effectivelymore » improve the electrical mobility of low-temperature PEALD SnO 2 ESLs and consequently significantly reduce or even eliminate the J-V hysteresis. With the reduction of J-V hysteresis and optimization of deposition process, planar PVSCs with stabilized output powers up to 20.3% are achieved. Here, the results of this study provide insights for further enhancing the efficiency of planar PVSCs.« less

Synthesis of Sr0.9K0.1FeO3-δ electrocatalysts by mechanical activation

NASA Astrophysics Data System (ADS)

Monteiro, J. F.; Waerenborgh, J. C.; Kovalevsky, A. V.; Yaremchenko, A. A.; Frade, J. R.

2013-02-01

Potassium-substituted SrFeO3-δ for possible application as oxygen evolution electrode in alkaline or molten salt media was prepared by mechanical activation and characterized by X-ray diffraction, dilatometric and thermogravimetric analysis, Mössbauer spectroscopy, and electrical conductivity measurements. Room temperature mechanical activation of a mixture of oxide precursors with subsequent thermal treatments at 700-900 °C results in the formation of Sr0.9K0.1FeO3-δ with tetragonal perovskite-like structure. Such allows to decrease the synthesis temperature, if compared to the conventional solid-state route, and to prevent possible volatilization of potassium. The results of Mössbauer spectroscopy studies indicate that the oxygen nonstoichiometry in the samples annealed in air at 900-1100 °C with subsequent rapid cooling vary in the range δ=0.30-0.32. The electrical conductivity in air exhibits a metal-like behaviour at temperatures above 400 °C and semiconductor behaviour in the low-temperature range, reaching 13-30 S/cm under prospective operation conditions for alkaline electrolyzers (≤90 °C).

Diffusion coalescence in НоBa2Cu3O7-x single crystals under the application of hydrostatic pressure

NASA Astrophysics Data System (ADS)

Boiko, Y. I.; Bogdanov, V. V.; Vovk, R. V.; Khadzhaj, G. Ya; Kamchatnaya, S. N.; Goulatis, I. L.; Chroneos, A.

2017-09-01

Experimental results on the effect of external hydrostatic pressure up to 5 kbar on the ρ(T) dependence in the ab plane of HoBa2Cu3O7-x single crystals (x  ≈  0.35) in the temperature range from 300 K to the superconducting transition temperature T c are presented and discussed. It was established that the application of external hydrostatic pressure P  =  5 kbar significantly intensified the process of diffusion coalescence of oxygen clusters, causing the growth of their average size. This leads to an increase in the number of negative U-centers, the presence of which results to the appearance of a phase capable of generating paired carriers of electric charge and, correspondingly, characterized by a higher transition temperature T c. Employing this hypothesis that concerns the mechanism of the diffusion coalescence of oxygen clusters, the change in the form of the temperature and time dependences of the electrical resistivity under the application of external hydrostatic pressure is discussed.

Measurements of heat generation in prismatic Li-ion batteries

NASA Astrophysics Data System (ADS)

Chen, Kaiwei; Unsworth, Grant; Li, Xianguo

2014-09-01

An accurate understanding of the characteristics of battery heat generation is essential to the development and success of thermal management systems for electric vehicles. In this study, a calorimeter capable of measuring the heat generation rates of a prismatic battery is developed and verified by using a controllable electric heater. The heat generation rates of a prismatic A123 LiFePO4 battery is measured for discharge rates ranging from 0.25C to 3C and operating temperature ranging from -10 °C to 40 °C. At low rates of discharge the heat generation is not significant, even becoming endothermic at the battery operating temperatures of 30 °C and 40 °C. Heat of mixing is observed to be a non-negligible component of total heat generation at discharge rates as low as 0.25C for all tested battery operating temperatures. A double plateau in battery discharge curve is observed for operating temperatures of 30 °C and 40 °C. The developed experimental facility can be used for the characterization of heat generation for any prismatic battery, regardless of chemistries.

6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith, Roger; Ferrier, Terry; Krasowski, Michael J.;

Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shaikh, Shaheed U.; Desale, Dipalee J.; Siddiqui, Farha Y.

2012-11-15

Graphical abstract: The effect of different intensities (40, 60 100 and 200 W) of light on CdS quantum dots thin film annealed at 350 °C indicating enhancement in (a) photo-current and (b) photosensitivity. Highlights: ► The preparation of CdS nanodot thin film at room temperature by M-CBD technique. ► Study of air annealing on prepared CdS nanodots thin film. ► The optimized annealing temperature for CdS nanodot thin film is 350 °C. ► Modified CdS thin films can be used in photosensor application. -- Abstract: CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature usingmore » modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subsequently characterized by scanning electron microscopy, ultraviolet–visible spectroscopy, electrical resistivity and I–V system. The modifications observed in morphology and opto-electrical properties of the thin films are presented.« less

EFFECTS OF TRITIUM GAS EXPOSURE ON THE GLASS TRANSITION TEMPERATURE OF EPDM ELASTOMER AND ON THE CONDUCTIVITY OF POLYANILINE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clark, E; Marie Kane, M

2008-12-12

Four formulations of EPDM (ethylene-propylene diene monomer) elastomer were exposed to tritium gas initially at one atmosphere and ambient temperature for between three and four months in closed containers. Material properties that were characterized include density, volume, mass, appearance, flexibility, and dynamic mechanical properties. The glass transition temperature was determined by analysis of the dynamic mechanical property data per ASTM standards. EPDM samples released significant amounts of gas when exposed to tritium, and the glass transition temperature increased by about 3 C. during the exposure. Effects of ultraviolet and gamma irradiation on the surface electrical conductivity of two types ofmore » polyaniline films are also documented as complementary results to planned tritium exposures. Future work will determine the effects of tritium gas exposure on the electrical conductivity of polyaniline films, to demonstrate whether such films can be used as a sensor to detect tritium. Surface conductivity was significantly reduced by irradiation with both gamma rays and ultraviolet light. The results of the gamma and UV experiments will be correlated with the tritium exposure results.« less

Molecular-dynamics simulations of self-assembled monolayers (SAM) on parallel computers

NASA Astrophysics Data System (ADS)

Vemparala, Satyavani

The purpose of this dissertation is to investigate the properties of self-assembled monolayers, particularly alkanethiols and Poly (ethylene glycol) terminated alkanethiols. These simulations are based on realistic interatomic potentials and require scalable and portable multiresolution algorithms implemented on parallel computers. Large-scale molecular dynamics simulations of self-assembled alkanethiol monolayer systems have been carried out using an all-atom model involving a million atoms to investigate their structural properties as a function of temperature, lattice spacing and molecular chain-length. Results show that the alkanethiol chains tilt from the surface normal by a collective angle of 25° along next-nearest neighbor direction at 300K. At 350K the system transforms to a disordered phase characterized by small tilt angle, flexible tilt direction, and random distribution of backbone planes. With increasing lattice spacing, a, the tilt angle increases rapidly from a nearly zero value at a = 4.7A to as high as 34° at a = 5.3A at 300K. We also studied the effect of end groups on the tilt structure of SAM films. We characterized the system with respect to temperature, the alkane chain length, lattice spacing, and the length of the end group. We found that the gauche defects were predominant only in the tails, and the gauche defects increased with the temperature and number of EG units. Effect of electric field on the structure of poly (ethylene glycol) (PEG) terminated alkanethiol self assembled monolayer (SAM) on gold has been studied using parallel molecular dynamics method. An applied electric field triggers a conformational transition from all-trans to a mostly gauche conformation. The polarity of the electric field has a significant effect on the surface structure of PEG leading to a profound effect on the hydrophilicity of the surface. The electric field applied anti-parallel to the surface normal causes a reversible transition to an ordered state in which the oxygen atoms are exposed. On the other hand, an electric field applied in a direction parallel to the surface normal introduces considerable disorder in the system and the oxygen atoms are buried inside.

The Effect of MnO2 Content and Sintering Atmosphere on The Electrical Properties of Iron Titanium Oxide NTC Thermistors using Yarosite

NASA Astrophysics Data System (ADS)

Wiendartun; Gustaman Syarif, Dani

2017-02-01

The effect of MnO2 content and sintering atmosphere on the characteristics of Fe2TiO5 ceramics for Negative Thermal Coefficient (NTC) thermistors by using Fe2O3 derived from yarosite has been studied. The ceramics were produced by pressing a homogeneous mixture of Fe2O3, TiO2 and MnO2 (0-2.0 w/o) powders in appropriate proportions to produce Fe2TiO5 based ceramics and sintering the pressed powder at 1100-1200°C for 3 hours in air, O2 and N2 gas. Electrical characterization was done by measuring electrical resistivity of the sintered ceramics at various temperatures from 30°C to 200°C. Microstructure and structural analyses were also carried out by using an scanning electron microscope (SEM) and x-ray diffraction (XRD). The XRD data showed that the pellets crystallize in orthorhombic. The presence of second phase could not be identified from the XRD analyses. The SEM images showed that the grain size of pellet ceramics increase with increasing of MnO2 addition, and the grains size of the ceramic sintered in oxygen gas is smaller than sintered in nitrogen gas. Electrical data showed that the value of room temperature resistance (RRT) tend to decrease with respect to the increasing of MnO2 addition and the pellet ceramics sintered in oxygen gas had the largest thermistor constant (B), activation energy (Ea), sensitivity (α) and room temperature resistance (RRT), compared to the sintered in nitrogen gas. From the electrical characteristics data, it was known that the electrical characteristics of the Fe2TiO5 pellet ceramics followed the NTC characteristic. The fabricated Fe2TiO5 ceramics have thermistor constants (B = 2207-7145K). This can be applied as temperature sensor, and will fulfill the market requirement.

Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

NASA Astrophysics Data System (ADS)

Dinh, Toan; Viet Dao, Dzung; Phan, Hoang-Phuong; Wang, Li; Qamar, Afzaal; Nguyen, Nam-Trung; Tanner, Philip; Rybachuk, Maksym

2015-06-01

We report on the temperature dependence of the charge transport and activation energy of amorphous silicon carbide (a-SiC) thin films grown on quartz by low-pressure chemical vapor deposition. The electrical conductivity as characterized by the Arrhenius rule was found to vary distinctly under two activation energy thresholds of 150 and 205 meV, corresponding to temperature ranges of 300 to 450 K and 450 to 580 K, respectively. The a-SiC/quartz system displayed a high temperature coefficient of resistance ranging from -4,000 to -16,000 ppm/K, demonstrating a strong feasibility of using this material for highly sensitive thermal sensing applications.

Analysis of hybrid electric/thermofluidic inputs for wet shape memory alloy actuators

NASA Astrophysics Data System (ADS)

Flemming, Leslie; Mascaro, Stephen

2013-01-01

A wet shape memory alloy (SMA) actuator is characterized by an SMA wire embedded within a compliant fluid-filled tube. Heating and cooling of the SMA wire produces a linear contraction and extension of the wire. Thermal energy can be transferred to and from the wire using combinations of resistive heating and free/forced convection. This paper analyzes the speed and efficiency of a simulated wet SMA actuator using a variety of control strategies involving different combinations of electrical and thermofluidic inputs. A computational fluid dynamics (CFD) model is used in conjunction with a temperature-strain model of the SMA wire to simulate the thermal response of the wire and compute strains, contraction/extension times and efficiency. The simulations produce cycle rates of up to 5 Hz for electrical heating and fluidic cooling, and up to 2 Hz for fluidic heating and cooling. The simulated results demonstrate efficiencies up to 0.5% for electric heating and up to 0.2% for fluidic heating. Using both electric and fluidic inputs concurrently improves the speed and efficiency of the actuator and allows for the actuator to remain contracted without continually delivering energy to the actuator, because of the thermal capacitance of the hot fluid. The characterized speeds and efficiencies are key requirements for implementing broader research efforts involving the intelligent control of electric and thermofluidic networks to optimize the speed and efficiency of wet actuator arrays.

Ladder polymers for use as high temperature stable resins or coatings

NASA Technical Reports Server (NTRS)

Meador, Mary Ann (Inventor)

1990-01-01

An object of the invention is to synthesize a new class of ladder and partial ladder polymers. In accordance with the invention, the new class of ladder and partial ladder polymers are synthesized by polymerizing a bis-dienophile with a bis-diene. Another object of the invention is to provide a fabricated, electrically conducting, void free composite comprising the new class of the ladder and partial ladder polymers described above. The novelty of the invention relates to a new class of ladder and partial ladder polymers and a process for synthesizing these polymers. These polymers are soluble in common organic solvents and are characterized with a unique dehydration property at temperatures of 300 to 400 C to provide thermo-oxidatively stable pentiptycene units along the polymeric backbone. These polymers are further characterized with high softening points and good thermo-oxidative stability properties. Thus these polymers have potential as processable, matrix resins for high temperature composite applications.

Experimental validation of a 0-D numerical model for phase change thermal management systems in lithium-ion batteries

NASA Astrophysics Data System (ADS)

Schweitzer, Ben; Wilke, Stephen; Khateeb, Siddique; Al-Hallaj, Said

2015-08-01

A lumped (0-D) numerical model has been developed for simulating the thermal response of a lithium-ion battery pack with a phase-change composite (PCC™) thermal management system. A small 10s4p battery pack utilizing PCC material was constructed and subjected to discharge at various C-rates in order to validate the lumped model. The 18650 size Li-ion cells used in the pack were electrically characterized to determine their heat generation, and various PCC materials were thermally characterized to determine their apparent specific heat as a function of temperature. Additionally, a 2-D FEA thermal model was constructed to help understand the magnitude of spatial temperature variation in the pack, and to understand the limitations of the lumped model. Overall, good agreement is seen between experimentally measured pack temperatures and the 0-D model, and the 2-D FEA model predicts minimal spatial temperature variation for PCC-based packs at C-rates of 1C and below.

Developing instrumentation to characterize thermoelectric generator modules.

PubMed

Liu, Dawei; Li, Qiming; Peng, Wenbo; Zhu, Lianjun; Gao, Hu; Meng, Qingsen; Jin, A J

2015-03-01

Based on the law of physics, known as "Seebeck effect," a thermoelectric generator (TEG) produces electricity when the temperature differential is applied across the TEG. This article reports a precision method in characterizing TEG modules. A precision instrument is constructed to study thermoelectric conversion in terms of output power and efficiency of TEG modules. The maximum allowable TEG module size is 150 mm, and the preferred size is from 30 mm to 60 mm. During measurements, the highest hot side temperature is 500 °C and the cold side temperature can be adjusted from room temperature to 100 °C. A mechanical structure is developed to control the pressure and parallelism of the clamping force of the TEG on both its hot and cold sides. A heat flux measurement module is installed at its cold side, and the heat flux through TEGs can be measured in position. Finally, the energy conversion efficiency of TEGs is calculated from experimental data of both an output power and a heat flux.

Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature

NASA Astrophysics Data System (ADS)

Lioliou, G.; Meng, X.; Ng, J. S.; Barnett, A. M.

2016-03-01

Two GaAs mesa p+-i-n+ photodiodes intended for photon counting X-ray spectroscopy, having an i layer thickness of 7 μm and diameter of 200 μm, have been characterized electrically, for their responsivity at the wavelength range 580 nm to 980 nm and one of them for its performance at detection of soft X-rays, at room temperature. Dark current and capacitance measurements as a function of applied forward and reverse bias are presented. The results show low leakage current densities, in the range of nA/cm2 at the maximum internal electric field (22 kV/cm). The unintentional doping concentration of the i layer, calculated from capacitance measurements, was found to be <1014 cm-3. Photocurrent measurements were performed under visible and near infrared light illumination for both diodes. The analysis of these measurements suggests the presence of a non-active (dead) layer (0.16 μm thickness) at the p+ side top contact interface, where the photogenerated carriers do not contribute to the photocurrent, possibly due to recombination. One of the diodes, D1, was also characterized as detector for room temperature photon counting X-ray spectroscopy; the best energy resolution achieved (FWHM) at 5.9 keV was 745 eV. The noise analysis of the system, based on spectra obtained at different shaping times and applied reverse biases, showed that the dominant source of noise is the dielectric noise. It was also calculated that there was at least (165±24) eV charge trapping noise at 0 V.

Dielectric and electrical studies of Pr{sup 3+} doped nano CaSiO{sub 3} perovskite ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulkarni, Sandhya, E-mail: pappu.sandhyakulkarni@gmail.com; Nagabhushana, B.M.; Parvatikar, Narsimha

2014-02-01

Highlights: • CaSiO{sub 3}:Pr{sup 3+} was prepared by facile low temperature solution combustion method. • The crystalline phase of the product is obtained by adopting sintering method. • Samples prepared at 500 °C and calcined at 900 °C for 3 h showed β-phase. • The Pr{sup 3+} doped CaSiO{sub 3} shows “unusual results”. • The electrical microstructure has been accepted to be of internal barrier layer capacitor. - Abstract: CaSiO{sub 3} nano-ceramic powder doped with Pr{sup 3+} has been prepared by solution combustion method. The powder Ca{sub 0.95}Pr{sub 0.05}SiO{sub 3} is investigated for its dielectric and electrical properties at roommore » temperature to study the effect of doping. The sample is characterized by X-ray diffraction and infrared spectroscopy. The size of either of volume elements of CaSiO{sub 3}:Pr{sup 3+} estimated from transmission electron microscopy is about 180–200 nm. The sample shows colossal dielectric response at room temperature. This colossal dielectric behaviour follows Debye-type relaxation and can be explained by Maxwell–Wagner (MW) polarization. However, analysis of impedance and electric modulus data using Cole–Cole plot shows that it deviates from ideal Debye behaviour resulting from the distribution of relaxation times. The distribution in the relaxation times may be attributed to existence of electrically heterogeneous grains, insulating grain boundary, and electrode contact regions. Doping, thus, results in substantial modifications in the dielectric and electrical properties of the nano-ceramic CaSiO{sub 3}.« less

Characterization system for research on energy storage capacitors.

PubMed

Noriega, J R; Iyore, O D; Budime, C; Gnade, B; Vasselli, J

2013-05-01

In this work a characterization system for high energy-density capacitors is described and demonstrated. Capacitors are being designed using thin-film technology in an attempt to achieve higher energy-density levels by operating the devices at a high voltage. These devices are fabricated from layers of 100 nm aluminum and a layer of polyvinylidene fluoride-hexafluoropropylene on a polyethylene naphthalate plastic substrate. The devices have been designed to store electrical charge at up to 200 V. Characterizations of these devices focus on the measurement of capacitance vs bias voltage and temperature, equivalent series resistance, and charge/discharge cycles. For the purpose of the characterization of these capacitors, an electronic charge/discharge interface was designed and tested.

Growth, structural, spectroscopic and optical characterization of barium doped calcium tartrate

NASA Astrophysics Data System (ADS)

Verma, Seema; Raina, Bindu; Gupta, Vandana; Bamzai, K. K.

2018-05-01

Barium doped calcium tartrates synthesized by controlled diffusion using silica gel technique at ambient temperature was characterized by single crystal X-ray diffraction which establishes monoclinic crystal system with volume of the unit cell 923.97(10) Ǻ3 and the space group being P21. UV - Vis characterization gives various linear optical constants like absorption, transmittance, reflectance, band gap, extinction coefficient, urbach energy, complex dielectric constant, optical and electrical conductivity. These constants are considered to be essential in characterizing materials that are used in various applications like fabrication of optoelectronic devices. FTIR spectrum establishes the presence of various bands of functional groups expected from metal tartrate with water of crystallization.

Silicon Field Effect Transistors as Dual-Use Sensor-Heater Hybrids

PubMed Central

Reddy, Bobby; Elibol, Oguz H.; Nair, Pradeep R.; Dorvel, Brian R.; Butler, Felice; Ahsan, Zahab; Bergstrom, Donald E.; Alam, Muhammad A.; Bashir, Rashid

2011-01-01

We demonstrate the temperature mediated applications of a previously proposed novel localized dielectric heating method on the surface of dual purpose silicon field effect transistor (FET) sensor-heaters and perform modeling and characterization of the underlying mechanisms. The FETs are first shown to operate as electrical sensors via sensitivity to changes in pH in ionic fluids. The same devices are then demonstrated as highly localized heaters via investigation of experimental heating profiles and comparison to simulation results. These results offer further insight into the heating mechanism and help determine the spatial resolution of the technique. Two important biosensor platform applications spanning different temperature ranges are then demonstrated: a localized heat-mediated DNA exchange reaction and a method for dense selective functionalization of probe molecules via the heat catalyzed complete desorption and reattachment of chemical functionalization to the transistor surfaces. Our results show that the use of silicon transistors can be extended beyond electrical switching and field-effect sensing to performing localized temperature controlled chemical reactions on the transistor itself. PMID:21214189

Antiferromagnetism and superconductivity in the half-Heusler semimetal HoPdBi

PubMed Central

Pavlosiuk, Orest; Kaczorowski, Dariusz; Fabreges, Xavier; Gukasov, Arsen; Wiśniewski, Piotr

2016-01-01

We observed the coexistence of superconductivity and antiferromagnetic order in the single-crystalline ternary pnictide HoPdBi, a plausible topological semimetal. The compound orders antiferromagnetically at TN = 1.9 K and exhibits superconductivity below Tc = 0.7 K, which was confirmed by magnetic, electrical transport and specific heat measurements. The specific heat shows anomalies corresponding to antiferromagnetic ordering transition and crystalline field effect, but not to superconducting transition. Single-crystal neutron diffraction indicates that the antiferromagnetic structure is characterized by the propagation vector. Temperature variation of the electrical resistivity reveals two parallel conducting channels of semiconducting and metallic character. In weak magnetic fields, the magnetoresistance exhibits weak antilocalization effect, while in strong fields and temperatures below 50 K it is large and negative. At temperatures below 7 K Shubnikov-de Haas oscillations with two frequencies appear in the resistivity. These oscillations have non-trivial Berry phase, which is a distinguished feature of Dirac fermions. PMID:26728755

Analysis of Yttrium-Barium-Copper-Oxide by x ray diffraction and mechanical characterization

NASA Technical Reports Server (NTRS)

Arsenovic, Petar

1992-01-01

The efforts in developing high-temperature superconductor (HTSC) YBa2Cu3O7 electrical leads are to benefit future NASA missions that will carry payloads with sensitive instruments operating at cryogenic temperatures. Present-day leads made of copper or magnesium are responsible for as much as 50 percent of the parasitic heat load on cryogenic systems. A reduction of this load could be achieved by replacing the conventional materials with HTSC ceramic electrical leads. Superconductor quality has become a concern in the industry, as has the development of effective evaluation methods. The factors that need to be examined for these materials include material purity, mechanical properties, and superconducting ability below the critical temperature. We applied several methods to study these factors: thermogravimetric analysis, x-ray diffraction, tensile testing, and laser-generated ultrasound. Our objectives were to determine the average tensile strength and Young's modulus of the HTSC material and to compare them to those values for copper and manganin.

Investigation of electrical studies of spinel FeCo2O4 synthesized by sol-gel method

NASA Astrophysics Data System (ADS)

Lobo, Laurel Simon; Kalainathan, S.; Kumar, A. Ruban

2015-12-01

In this work, spinel FeCo2O4 is synthesized by sol-gel method using succinic acid as a chelating agent at 900 °C. The structural, spectroscopic and morphological characterization was carried out by using X-ray diffraction (XRD), Fourier Transform Infrared Spectroscopy (FT-IR) and Scanning Electron Microscopy equipped with Energy Dispersive X-ray spectrometer (SEM-EDX). The M-H loop at room temperature confirms the ferromagnetic property of the sample. The frequency and temperature dependence of dielectric constant (εʹ) and dielectric loss (tan δ) shows the presence of Maxwell-Wagner relaxation in the sample due to the presence of oxygen vacancy. Nyquist plot for frequency and temperature domain signifies the presence of grain effect, grain boundary effect and electrode interface in the conduction process. Electric modulus under suppression of electrode polarization shows the grain and grain boundary effects. The electrode polarization is observed in the lower frequency range of the conductivity graph.

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanne, A.; Movva, H. C. P.; Kang, S.

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriersmore » as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.« less

Electrical Characterization of the RCA CDP1822SD Random Access Memory, Volume 1, Appendix a

NASA Technical Reports Server (NTRS)

Klute, A.

1979-01-01

Electrical characteristization tests were performed on 35 RCA CDP1822SD, 256-by-4-bit, CMOS, random access memories. The tests included three functional tests, AC and DC parametric tests, a series of schmoo plots, rise/fall time screening, and a data retention test. All tests were performed on an automated IC test system with temperatures controlled by a thermal airstream unit. All the functional tests, the data retention test, and the AC and DC parametric tests were performed at ambient temperatures of 25 C, -20 C, -55 C, 85 C, and 125 C. The schmoo plots were performed at ambient temperatures of 25 C, -55 C, and 125 C. The data retention test was performed at 25 C. Five devices failed one or more functional tests and four of these devices failed to meet the expected limits of a number of AC parametric tests. Some of the schmoo plots indicated a small degree of interaction between parameters.

Structural and electrical properties of Li4Ti5O12 anode material for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Vikram Babu, B.; Vijaya Babu, K.; Tewodros Aregai, G.; Seeta Devi, L.; Madhavi Latha, B.; Sushma Reddi, M.; Samatha, K.; Veeraiah, V.

2018-06-01

In this work we investigate Li4Ti5O12 (LTO) anode material synthesized by conventional solid state reaction method calcined at 850 °C for 16 h. Thermal analysis reveals the temperature dependence of the material properties. The phase composition, micro-morphology and elemental analysis of the compound are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectra (EDS) respectively. The results of XRD pattern possessed cubic spinel structure with space group Fd-3m. The morphological features of the powder sample are in the range of 1.1 μm. The EDS spectra confirm the constituent elemental composition of the sample. Electrical conductivity measurement at different frequencies and temperatures had been carried out; and at room temperature it is found to be 5.96 × 10-7 S/cm. Besides, for the different frequencies applied, the activation energies were calculated and obtained to be in the range of 0.2-0.4 eV.

Electronic Components and Circuits for Extreme Temperature Environments

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Dickman, John E.; Gerber, Scott

2003-01-01

Planetary exploration missions and deep space probes require electrical power management and control systems that are capable of efficient and reliable operation in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures will not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures; thereby reducing system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior and tolerance in the electrical and thermal properties of semiconductor and dielectric materials at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial-off-the-shelf as well as developed components that are being characterized include switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being investigated for potential use in low temperature applications. An overview of the NASA Glenn Research Center Low Temperature Electronic Program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained through in-house component and circuit testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

Relating the Electrical Resistance of Fresh Concrete to Mixture Proportions.

PubMed

Obla, K; Hong, R; Sherman, S; Bentz, D P; Jones, S Z

2018-01-01

Characterization of fresh concrete is critical for assuring the quality of our nation's constructed infrastructure. While fresh concrete arriving at a job site in a ready-mixed concrete truck is typically characterized by measuring temperature, slump, unit weight, and air content, here the measurement of the electrical resistance of a freshly cast cylinder of concrete is investigated as a means of assessing mixture proportions, specifically cement and water contents. Both cement and water contents influence the measured electrical resistance of a sample of fresh concrete: the cement by producing ions (chiefly K + , Na + , and OH - ) that are the main source of electrical conduction; and the water by providing the main conductive pathways through which the current travels. Relating the measured electrical resistance to attributes of the mixture proportions, such as water-cement ratio by mass ( w/c ), is explored for a set of eleven different concrete mixtures prepared in the laboratory. In these mixtures, w/c , paste content, air content, fly ash content, high range water reducer dosage, and cement alkali content are all varied. Additionally, concrete electrical resistance data is supplemented by measuring the resistivity of its component pore solution obtained from 5 laboratory-prepared cement pastes with the same proportions as their corresponding concrete mixtures. Only measuring the concrete electrical resistance can provide a prediction of the mixture's paste content or the product w*c ; conversely, when pore solution resistivity is also available, w/c and water content of the concrete mixture can be reasonably assessed.

Relating the Electrical Resistance of Fresh Concrete to Mixture Proportions

PubMed Central

Obla, K.; Hong, R.; Sherman, S.; Bentz, D.P.; Jones, S.Z.

2018-01-01

Characterization of fresh concrete is critical for assuring the quality of our nation’s constructed infrastructure. While fresh concrete arriving at a job site in a ready-mixed concrete truck is typically characterized by measuring temperature, slump, unit weight, and air content, here the measurement of the electrical resistance of a freshly cast cylinder of concrete is investigated as a means of assessing mixture proportions, specifically cement and water contents. Both cement and water contents influence the measured electrical resistance of a sample of fresh concrete: the cement by producing ions (chiefly K+, Na+, and OH-) that are the main source of electrical conduction; and the water by providing the main conductive pathways through which the current travels. Relating the measured electrical resistance to attributes of the mixture proportions, such as water-cement ratio by mass (w/c), is explored for a set of eleven different concrete mixtures prepared in the laboratory. In these mixtures, w/c, paste content, air content, fly ash content, high range water reducer dosage, and cement alkali content are all varied. Additionally, concrete electrical resistance data is supplemented by measuring the resistivity of its component pore solution obtained from 5 laboratory-prepared cement pastes with the same proportions as their corresponding concrete mixtures. Only measuring the concrete electrical resistance can provide a prediction of the mixture’s paste content or the product w*c; conversely, when pore solution resistivity is also available, w/c and water content of the concrete mixture can be reasonably assessed. PMID:29882546

Effects of regional temperature on electric vehicle efficiency, range, and emissions in the United States.

PubMed

Yuksel, Tugce; Michalek, Jeremy J

2015-03-17

We characterize the effect of regional temperature differences on battery electric vehicle (BEV) efficiency, range, and use-phase power plant CO2 emissions in the U.S. The efficiency of a BEV varies with ambient temperature due to battery efficiency and cabin climate control. We find that annual energy consumption of BEVs can increase by an average of 15% in the Upper Midwest or in the Southwest compared to the Pacific Coast due to temperature differences. Greenhouse gas (GHG) emissions from BEVs vary primarily with marginal regional grid mix, which has three times the GHG intensity in the Upper Midwest as on the Pacific Coast. However, even within a grid region, BEV emissions vary by up to 22% due to spatial and temporal ambient temperature variation and its implications for vehicle efficiency and charging duration and timing. Cold climate regions also encounter days with substantial reduction in EV range: the average range of a Nissan Leaf on the coldest day of the year drops from 70 miles on the Pacific Coast to less than 45 miles in the Upper Midwest. These regional differences are large enough to affect adoption patterns and energy and environmental implications of BEVs relative to alternatives.

Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thinmore » films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Steady-state analytical model of suspended p-type 3C-SiC bridges under consideration of Joule heating

NASA Astrophysics Data System (ADS)

Balakrishnan, Vivekananthan; Dinh, Toan; Phan, Hoang-Phuong; Kozeki, Takahiro; Namazu, Takahiro; Viet Dao, Dzung; Nguyen, Nam-Trung

2017-07-01

This paper reports an analytical model and its validation for a released microscale heater made of 3C-SiC thin films. A model for the equivalent electrical and thermal parameters was developed for the two-layer multi-segment heat and electric conduction. The model is based on a 1D energy equation, which considers the temperature-dependent resistivity and allows for the prediction of voltage-current and power-current characteristics of the microheater. The steady-state analytical model was validated by experimental characterization. The results, in particular the nonlinearity caused by temperature dependency, are in good agreement. The low power consumption of the order of 0.18 mW at approximately 310 K indicates the potential use of the structure as thermal sensors in portable applications.

Preparation Characterization and Electrical Study of New Polymeric Mixture (Consist of Three Polymers) Nanocomposites

NASA Astrophysics Data System (ADS)

AL-Abodi, Entisar E.; Farouk, Azhar

2018-05-01

By using hummers’ method, graphene oxide (GO) was synthesized and by reducing it gave reduced graphene oxide (RGO). The polymeric blend contain three polymers; Poly Aniline (PANI), Poly Vinyl Acetate( PVAc),and Pecten(Pc) wich have been prepared at studied amount. The composites for above polymers with various concentrations of, graphene oxide (GO) and with reduced graphene oxide (RGO)were prepared, and than pour into films(chips). The dielectric constant properties of chips were measured, which its point the electrical conductivity values for the prepared chips increase with increasing of frequency. As well, the electrical conductivity is research in terms of the Arrhenius plot, it is plotted against the reverse temperature for the prepared films at different applied frequencies.

Feasibility Study of Thin Film Thermocouple Piles

NASA Technical Reports Server (NTRS)

Sisk, R. C.

2001-01-01

Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

Optical and electrical properties of p-type transparent conducting CuAlO2 thin film synthesized by reactive radio frequency magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Saha, B.; Thapa, R.; Jana, S.; Chattopadhyay, K. K.

2010-10-01

Thin films of p-type transparent conducting CuAlO2 have been synthesized through reactive radio frequency magnetron sputtering on silicon and glass substrates at substrate temperature 300°C. Reactive sputtering of a target fabricated from Cu and Al powder (1:1.5) was performed in Ar+O2 atmosphere. The deposition parameters were optimized to obtain phase pure, good quality CuAlO2 thin films. The films were characterized by studying their structural, morphological, optical and electrical properties.

Thermal and other tests of photovoltaic modules performed in natural sunlight

NASA Technical Reports Server (NTRS)

Stultz, J. W.

1979-01-01

The nominal operating cell temperature (NOCT), an effective way to characterize the thermal performance of a photovoltaic module in natural sunlight, is developed. NOCT measurements for more than twenty different modules are presented. Changes in NOCT reflect changes in module design, residential roof mounting, and dirt accumulation. Other test results show that electrical performance is improved by cooling modules with water and by use of a phase change wax. Electrical degradation resulting from the marriage of photovoltaic and solar water heating modules is demonstrated. Cost-effectiveness of each of these techniques is evaluated.

Investigation of electron beam lithography effects on metal-insulator transition behavior of vanadium dioxide

NASA Astrophysics Data System (ADS)

Yuce, H.; Alaboz, H.; Demirhan, Y.; Ozdemir, M.; Ozyuzer, L.; Aygun, G.

2017-11-01

Vanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.

Growth, structure and stability of sputter-deposited MoS2 thin films.

PubMed

Kaindl, Reinhard; Bayer, Bernhard C; Resel, Roland; Müller, Thomas; Skakalova, Viera; Habler, Gerlinde; Abart, Rainer; Cherevan, Alexey S; Eder, Dominik; Blatter, Maxime; Fischer, Fabian; Meyer, Jannik C; Polyushkin, Dmitry K; Waldhauser, Wolfgang

2017-01-01

Molybdenum disulphide (MoS 2 ) thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER) in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS 2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD) of MoS 2 films by magnetron sputtering. MoS 2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO 2 /Si and reticulated vitreous carbon (RVC) substrates. Samples deposited at room temperature (RT) and at 400 °C were compared. The deposited MoS 2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS 2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS 2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS 2 thin films are discussed. A potential application for such conductive nanostructured MoS 2 films could be as catalytically active electrodes in (photo-)electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS 2 films.

Growth, structure and stability of sputter-deposited MoS2 thin films

PubMed Central

Bayer, Bernhard C; Resel, Roland; Müller, Thomas; Skakalova, Viera; Habler, Gerlinde; Abart, Rainer; Cherevan, Alexey S; Eder, Dominik; Blatter, Maxime; Fischer, Fabian; Meyer, Jannik C; Polyushkin, Dmitry K; Waldhauser, Wolfgang

2017-01-01

Molybdenum disulphide (MoS2) thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER) in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD) of MoS2 films by magnetron sputtering. MoS2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO2/Si and reticulated vitreous carbon (RVC) substrates. Samples deposited at room temperature (RT) and at 400 °C were compared. The deposited MoS2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS2 thin films are discussed. A potential application for such conductive nanostructured MoS2 films could be as catalytically active electrodes in (photo-)electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS2 films. PMID:28685112

Protective interlayer for high temperature solid electrolyte electrochemical cells

DOEpatents

Singh, P.; Vasilow, T.R.; Richards, V.L.

1996-05-14

The invention is comprised of an electrically conducting doped or admixed cerium oxide composition with niobium oxide and/or tantalum oxide for electrochemical devices, characterized by the general formula: Nb{sub x}Ta{sub y}Ce{sub 1{minus}x{minus}y}O{sub 2} where x is about 0.0 to 0.05, y is about 0.0 to 0.05, and x+y is about 0.02 to 0.05, and where x is preferably about 0.02 to 0.05 and y is 0, and a method of making the same is also described. This novel composition is particularly applicable in forming a protective interlayer of a high temperature, solid electrolyte electrochemical cell, characterized by a first electrode; an electrically conductive interlayer of niobium and/or tantalum doped cerium oxide deposited over at least a first portion of the first electrode; an interconnect deposited over the interlayer; a solid electrolyte deposited over a second portion of the first electrode, the first portion being discontinuous from the second portion; and, a second electrode deposited over the solid electrolyte. The interlayer is characterized as being porous and selected from the group consisting of niobium doped cerium oxide, tantalum doped cerium oxide, and niobium and tantalum doped cerium oxide or admixtures of the same. The first electrode, an air electrode, is a porous layer of doped lanthanum manganite, the solid electrolyte layer is a dense yttria stabilized zirconium oxide, the interconnect layer is a dense, doped lanthanum chromite, and the second electrode, a fuel electrode, is a porous layer of nickel-zirconium oxide cermet. The electrochemical cell can take on a plurality of shapes such as annular, planar, etc. and can be connected to a plurality of electrochemical cells in series and/or in parallel to generate electrical energy. 5 figs.

Single-source-precursor synthesis of dense SiC/HfC(x)N(1-x)-based ultrahigh-temperature ceramic nanocomposites.

PubMed

Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; Guillon, Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

2014-11-21

A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfC(x)N(1-x)-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfC(x)N(1-x)-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfC(x)N(1-x)-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm(-1), the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm(-1).

Hot wire needle probe for thermal conductivity detection

DOEpatents

Condie, Keith Glenn; Rempe, Joy Lynn; Knudson, Darrell lee; Daw, Joshua Earl; Wilkins, Steven Curtis; Fox, Brandon S.; Heng, Ban

2015-11-10

An apparatus comprising a needle probe comprising a sheath, a heating element, a temperature sensor, and electrical insulation that allows thermal conductivity to be measured in extreme environments, such as in high-temperature irradiation testing. The heating element is contained within the sheath and is electrically conductive. In an embodiment, the heating element is a wire capable of being joule heated when an electrical current is applied. The temperature sensor is contained within the sheath, electrically insulated from the heating element and the sheath. The electrical insulation electrically insulates the sheath, heating element and temperature sensor. The electrical insulation fills the sheath having electrical resistance capable of preventing electrical conduction between the sheath, heating element, and temperature sensor. The control system is connected to the heating element and the temperature sensor.

Mobile Neel skyrmions at room temperature: Status and future

DOE PAGES

Jiang, Wanjun; Zhang, Wei; Yu, Guoqiang; ...

2016-03-07

Magnetic skyrmions are topologically protected spin textures that exhibit many fascinating features. As compared to the well-studied cryogenic Bloch skyrmions in bulk materials, we focus on the room- temperature Néel skyrmions in thin-film systems with an interfacial broken inversion symmetry in this article. Specifically, we show the stabilization, the creation, and the implementation of Néel skyrmions that are enabled by the electrical current-induced spin-orbit torques. As a result, towards the nanoscale Néel skyrmions, we further discuss the challenges from both material optimization and imaging characterization perspectives.

Effect of processing parameters on the characteristics of high-Tc superconductor YBa2Cu3Oy

NASA Technical Reports Server (NTRS)

Bansal, Narottam P.

1988-01-01

SEM, thermogravimetric analysis, powder X-ray diffraction,and measurements of electrical resistivity and magnetic susceptibility, are presently used to characterize the influence of sintering temperature, sintering and annealing atmospheres, and quench-rate on the properties of the YBa2Cu3Oy superconducting oxide. It is established that annealing in oxygen, together with slow cooling rates, are required for preparation of high-Tc superconductors with sharp transitions; rapid quenching from high temperature does not yield good superconductors, due to low oxygen content.

Noble Gas Leak Detector for Use in the SNS Neutron Electric Dipole Moment Experiment

NASA Astrophysics Data System (ADS)

Barrow, Chad; Huffman, Paul; Leung, Kent; Korobkina, Ekaterina; White, Christian; nEDM Collaboration Collaboration

2017-09-01

Common practice for leak-checking high vacuum systems uses helium as the probing gas. However, helium may permeate some materials at room temperature, making leak characterization difficult. The experiment to find a permanent electric dipole moment of the neutron (nEDM), to be conducted at Oak Ridge National Laboratories, will employ a large volume of liquid helium housed by such a helium-permeable composite material. It is desirable to construct a leak detector that can employ alternative test gases. The purpose of this experiment is to create a leak detector that can quantify the argon gas flux in a high vacuum environment and interpret this flux as a leak-rate. This apparatus will be used to check the nEDM volumes for leaks at room temperature before cooling down to cryogenic temperatures. Our leak detector uses a residual gas analyzer and a vacuum pumping station to characterize the gas present in an evacuated volume. The introduction of argon gas into the system is interpreted as a leak-rate into the volume. The device has been calibrated with NIST certified calibrated leaks and the machine's sensitivity has been calculated using background gas analysis. As a result of the device construction and software programming, we are able to leak-check composite and polyamide volumes This work was supported in part by the US Department of Energy under Grant No. DE-FG02-97ER41042.

Optical Fiber Thermometer Based on Fiber Bragg Gratings

NASA Astrophysics Data System (ADS)

Rosli, Ekbal Bin; Mohd. Noor, Uzer

2018-03-01

Fiber Bragg grating has generated much interest in use as sensors to measure strain, temperature, and other physical parameters. It also the most common component used to develop this sensor with the advantages of simple, intrinsic sensing elements, electrically passive operation, EMI immunity, high sensitivity, compact size and potentially low cost [6]. This paper reports the design of an optical fiber thermometer based on fiber Bragg gratings. The system was developed for detecting temperature and strain by monitoring the shift of Bragg wavelength. The shifting of Bragg wavelength is used to indicate the temperature and strain due to the change in the surrounding temperature and strain. When the temperature and strain reach the exact wavelength level of the system, the temperature and strain value will display on the Arduino liquid crystal display (LCD). The optical fiber will provide the broadband light source and after passing the FBG the Bragg wavelength into the optical spectrum analyzer (OSA). The system is based on FBG as a physical quantity sensor. The temperatures measured is taken from the water bath and that of the strain is provided by amount of slotted mass used. The outcome of this project is to characterize the Bragg wavelength shifting from the fiber Bragg grating output. As the conclusion, this project provides an efficient optical fiber thermometer in measuring temperature and strain in order to replace the use of conventional electrical instruments.

High-Temperature Storage Testing of ACF Attached Sensor Structures

PubMed Central

Lahokallio, Sanna; Hoikkanen, Maija; Vuorinen, Jyrki; Frisk, Laura

2015-01-01

Several electronic applications must withstand elevated temperatures during their lifetime. Materials and packages for use in high temperatures have been designed, but they are often very expensive, have limited compatibility with materials, structures, and processing techniques, and are less readily available than traditional materials. Thus, there is an increasing interest in using low-cost polymer materials in high temperature applications. This paper studies the performance and reliability of sensor structures attached with anisotropically conductive adhesive film (ACF) on two different organic printed circuit board (PCB) materials: FR-4 and Rogers. The test samples were aged at 200 °C and 240 °C and monitored electrically during the test. Material characterization techniques were also used to analyze the behavior of the materials. Rogers PCB was observed to be more stable at high temperatures in spite of degradation observed, especially during the first 120 h of aging. The electrical reliability was very good with Rogers. At 200 °C, the failures occurred after 2000 h of testing, and even at 240 °C the interconnections were functional for 400 h. The study indicates that, even though these ACFs were not designed for use in high temperatures, with stable PCB material they are promising interconnection materials at elevated temperatures, especially at 200 °C. However, the fragility of the structure due to material degradation may cause reliability problems in long-term high temperature exposure. PMID:28793735

Design and characterization of a 20 Gbit/s clock recovery circuit

NASA Astrophysics Data System (ADS)

Monteiro, Paulo M.; Matos, J. N.; Gameiro, Atilio M. S.; da Rocha, Jose F.

1995-02-01

In this communication we report the design of a clock recovery circuit produced for the 20 Gbit/s demonstrator of the RACE 2011 project `TRAVEL' of the European Community. The clock recovery circuit is based on an open loop structure using a dielectric resonator narrow bandpass filter with a high quality factor. A detailed electrical characterization of the circuit and also its sensitivity to temperature and detuning variations are presented. The experimental results show that the circuit is a very attractive solution for the forthcoming STM-128 optical links.

Enhancement on crystallinity property of low annealed PbTiO3 thin films for metal-insulator-metal capacitor

NASA Astrophysics Data System (ADS)

Nurbaya, Z.; Wahid, M. H.; Rozana, M. D.; Alrokayan, S. A. H.; Khan, H. A.; Rusop, M.

2018-05-01

This study presents the investigation on crystallinity property of PbTiO3 thin films towards metal-insulator-metal capacitor device fabrication. The preparation of the thin films utilizes sol-gel spin coating method with low annealing temperature effect. Hence, structural and electrical characterization is brought to justify the thin films consistency.

Preparation and Characterization of Graphene Oxide Paper

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dikin,D.; Stankovich, S.; Zimney, E.

2007-01-01

Free-standing paper-like or foil-like materials are an integral part of our technological society. Their uses include protective layers, chemical filters, components of electrical batteries or supercapacitors, adhesive layers, electronic or optoelectronic components, and molecular storage. Inorganic 'paper-like' materials based on nanoscale components such as exfoliated vermiculite or mica platelets have been intensively studied and commercialized as protective coatings, high-temperature binders, dielectric barriers and gas-impermeable membranes. Carbon-based flexible graphite foils composed of stacked platelets of expanded graphite have long been used in packing and gasketing applications because of their chemical resistivity against most media, superior sealability over a wide temperature range,more » and impermeability to fluids. The discovery of carbon nanotubes brought about bucky paper, which displays excellent mechanical and electrical properties that make it potentially suitable for fuel cell and structural composite applications. Here we report the preparation and characterization of graphene oxide paper, a free-standing carbon-based membrane material made by flow-directed assembly of individual graphene oxide sheets. This new material outperforms many other paper-like materials in stiffness and strength. Its combination of macroscopic flexibility and stiffness is a result of a unique interlocking-tile arrangement of the nanoscale graphene oxide sheets.« less

Preparation and characterization of graphene oxide paper.

PubMed

Dikin, Dmitriy A; Stankovich, Sasha; Zimney, Eric J; Piner, Richard D; Dommett, Geoffrey H B; Evmenenko, Guennadi; Nguyen, SonBinh T; Ruoff, Rodney S

2007-07-26

Free-standing paper-like or foil-like materials are an integral part of our technological society. Their uses include protective layers, chemical filters, components of electrical batteries or supercapacitors, adhesive layers, electronic or optoelectronic components, and molecular storage. Inorganic 'paper-like' materials based on nanoscale components such as exfoliated vermiculite or mica platelets have been intensively studied and commercialized as protective coatings, high-temperature binders, dielectric barriers and gas-impermeable membranes. Carbon-based flexible graphite foils composed of stacked platelets of expanded graphite have long been used in packing and gasketing applications because of their chemical resistivity against most media, superior sealability over a wide temperature range, and impermeability to fluids. The discovery of carbon nanotubes brought about bucky paper, which displays excellent mechanical and electrical properties that make it potentially suitable for fuel cell and structural composite applications. Here we report the preparation and characterization of graphene oxide paper, a free-standing carbon-based membrane material made by flow-directed assembly of individual graphene oxide sheets. This new material outperforms many other paper-like materials in stiffness and strength. Its combination of macroscopic flexibility and stiffness is a result of a unique interlocking-tile arrangement of the nanoscale graphene oxide sheets.

A Study on Characterization of Light-Induced Electroless Plated Ni Seed Layer and Silicide Formation for Solar Cell Application

NASA Astrophysics Data System (ADS)

Takaloo, Ashkan Vakilipour; Joo, Seung Ki; Es, Firat; Turan, Rasit; Lee, Doo Won

2018-03-01

Light-induced electroless plating (LIEP) is an easy and inexpensive method that has been widely used for seed layer deposition of Nickel/Copper (Ni/Cu)-based metallization in the solar cell. In this study, material characterization aspects of the Ni seed layer and Ni silicide formation at different bath conditions and annealing temperatures on the n-side of a silicon diode structure have been examined to achieve the optimum cell contacts. The effects of morphology and chemical composition of Ni film on its electrical conductivity were evaluated and described by a quantum mechanical model. It has been found that correlation exists between the theoretical and experimental conductivity of Ni film. Residual stress and phase transformation of Ni silicide as a function of annealing temperature were evaluated using Raman and XRD techniques. Finally, transmission line measurement (TLM) technique was employed to determine the contact resistance of Ni/Si stack after thermal treatment and to understand its correlation with the chemical-structural properties. Results indicated that low electrical resistive mono-silicide (NiSi) phase as low as 5 mΩ.cm2 was obtained.

Microstrip resonators for electron paramagnetic resonance experiments.

PubMed

Torrezan, A C; Mayer Alegre, T P; Medeiros-Ribeiro, G

2009-07-01

In this article we evaluate the performance of an electron paramagnetic resonance (EPR) setup using a microstrip resonator (MR). The design and characterization of the resonator are described and parameters of importance to EPR and spin manipulation are examined, including cavity quality factor, filling factor, and microwave magnetic field in the sample region. Simulated microwave electric and magnetic field distributions in the resonator are also presented and compared with qualitative measurements of the field distribution obtained by a perturbation technique. Based on EPR experiments carried out with a standard marker at room temperature and a MR resonating at 8.17 GHz, the minimum detectable number of spins was found to be 5 x 10(10) spins/GHz(1/2) despite the low MR unloaded quality factor Q0=60. The functionality of the EPR setup was further evaluated at low temperature, where the spin resonance of Cr dopants present in a GaAs wafer was detected at 2.3 K. The design and characterization of a more versatile MR targeting an improved EPR sensitivity and featuring an integrated biasing circuit for the study of samples that require an electrical contact are also discussed.

Development and characterization of a ferroelectric non-volatile memory for flexible electronics

NASA Astrophysics Data System (ADS)

Mao, Duo

Flexible electronics have received significant attention recently because of the potential applications in displays, sensors, radio frequency identification (RFID) tags and other integrated circuits. Electrically addressable non-volatile memory is a key component for these applications. The major challenges are to fabricate the memory at a low temperature compatible with plastic substrates while maintaining good device reliability, by being compatible with process as needed to integrate with other electronic components for system-on-chip applications. In this work, ferroelectric capacitors fabricated at low temperature were developed. Based on that, a ferroelectric random access memory (FRAM) for flexible electronics was developed and characterized. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer was used as a ferroelectric material and a photolithographic process was developed to fabricate ferroelectric capacitors. Different characterization methods including atomic force microscopy, x-ray diffraction and Fourier-transform infrared reflection-absorption spectroscopy were used to study the material properties of the P(VDF-TrFE) film. The material properties were correlated with the electrical characteristics of the ferroelectric capacitors. To understand the polarization switching behavior of the P(VDF-TrFE) ferroelectric capacitors, a Nucleation-Limited-Switching (NLS) model was used to study the switching kinetics. The switching kinetics were characterized over the temperature range from -60 °C to 100 °C. Fatigue characteristics were studied at different electrical stress voltages and frequencies to evaluate the reliability of the ferroelectric capacitor. The degradation mechanism is attributed to the increase of the activation field and the suppression of the switchable polarization. To develop a FRAM circuit for flexible electronics, an n-channel thin film transistor (TFT) based on CdS as the semiconductor was integrated with a P(VDF-TrFE) ferroelectric capacitor for a one-transistor-one-capacitor (1T1C) memory cell. The 1T1C devices were fabricated at low temperature and demonstrated a memory window (DeltaVBL) of 2.3 V and 3.5 V, depending on the device dimensions. Next, FRAM arrays (4-bit, 16-bit and 64-bit) based on the two-transistor-two-capacitor (2T2C) memory cell architecture were designed and fabricated using a photolithographic process with 9 masks. The fabricated FRAM arrays were packaged in 28-pin ceramic packages. The read/write schemes were developed and the FRAM arrays show successful program and erase with a memory window of approximately 1 V at the output of the sense amplifier.

Electrical bushing for a superconductor element

DOEpatents

Mirebeau, Pierre; Lallouet, Nicolas; Delplace, Sebastien; Lapierre, Regis

2010-05-04

The invention relates to an electrical bushing serving to make a connection at ambient temperature to a superconductor element situated in an enclosure at cryogenic temperature. The electrical bushing passes successively through an enclosure at intermediate temperature between ambient temperature and cryogenic temperature, and an enclosure at ambient temperature, and it comprises a central electrical conductor surrounded by an electrically insulating sheath. According to the invention, an electrically conductive screen connected to ground potential surrounds the insulating sheath over a section that extends from the end of the bushing that is in contact with the enclosure at cryogenic temperature at least as far as the junction between the enclosure at intermediate temperature and the enclosure at ambient temperature. The invention is more particularly applicable to making a connection to a superconductor cable.

Performance of High-Speed PWM Control Chips at Cryogenic Temperatures

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.; Gerber, Scott; Hammoud, Ahmad; Patterson, Richard; Overton, Eric

2001-01-01

The operation of power electronic systems at cryogenic temperatures is anticipated in many NASA space missions such as planetary exploration and deep space probes. In addition to surviving the space hostile environment, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. As part of the NASA Glenn Low Temperature Electronics Program, several commercial high-speed Pulse Width Modulation (PWM) chips have been characterized in terms of their performance as a function of temperature in the range of 25 to -196 C (liquid nitrogen). These chips ranged in their electrical characteristics, modes of control, packaging options, and applications. The experimental procedures along with the experimental data obtained on the investigated chips are presented and discussed.

Onset of thermomagnetic convection around a vertically oriented hot-wire in ferrofluid

NASA Astrophysics Data System (ADS)

Vatani, Ashkan; Woodfield, Peter Lloyd; Nguyen, Nam-Trung; Dao, Dzung Viet

2018-06-01

The onset of thermomagnetic convection in ferrofluid in a vertical transient hot-wire cell is analytically and experimentally investigated by studying the temperature rise of an electrically-heated wire. During the initial stage of heating, the temperature rise is found to correspond well to that predicted by conduction only. For high electrical current densities, the initial heating stage is followed by a sudden change in the slope of the temperature rise with respect to time as a result of the onset of thermomagnetic convection cooling. The observed onset of thermomagnetic convection was then compared to that of natural convection of deionized water. For the first time, the critical time corresponding to the onset of thermomagnetic convection around an electrically-heated wire is characterized and non-dimensionalized as a critical Fourier number (Foc). We propose an equation for Foc as a function of a magnetic Rayleigh number to predict the time for the onset of thermomagnetic convection. We observed that thermomagnetic convection in ferrofluid occurs earlier than natural convection in non-magnetic fluids for similar experimental conditions. The onset of thermomagnetic convection is dependent on the current supplied to the wire. The findings have important implications for cooling of high-power electronics using ferrofluids and for measuring thermal properties of ferrofluids.

Characterizing submarine ground‐water discharge using fiber‐optic distributed temperature sensing and marine electrical resistivity

USGS Publications Warehouse

Henderson, Rory; Day-Lewis, Frederick D.; Lane, John W.; Harvey, Charles F.; Liu, Lanbo

2008-01-01

Submarine ground‐water discharge (SGD) contributes important solute fluxes to coastal waters. Pollutants are transported to coastal ecosystems by SGD at spatially and temporally variable rates. New approaches are needed to characterize the effects of storm‐event, tidal, and seasonal forcing on SGD. Here, we evaluate the utility of two geophysical methods‐fiber‐optic distributed temperature sensing (FO‐DTS) and marine electrical resistivity (MER)—for observing the spatial and temporal variations in SGD and the configuration of the freshwater/saltwater interface within submarine sediments. FO‐DTS and MER cables were permanently installed into the estuary floor on a transect extending 50 meters offshore under Waquoit Bay, Massachusetts, at the Waquoit Bay National Estuarine Research Reserve, and nearly continuous data were collected for 4 weeks in summer 2007. Initial results indicate that the methods are extremely useful for monitoring changes in the complex estuarine environment. The FO‐DTS produced time‐series data at approximately 1‐meter increments along the length of the fiber at approximately 29‐second intervals. The temperature time‐series data show that the temperature at near‐shore locations appears to be dominated by a semi‐diurnal (tidal) signal, whereas the temperature at off‐shore locations is dominated by a diurnal signal (day/night heating and cooling). Dipole‐dipole MER surveys were completed about every 50 minutes, allowing for production of high‐resolution time‐lapse tomograms, which provide insight into the variations of the subsurface freshwater/saltwater interface. Preliminary results from the MER data show a high‐resistivity zone near the shore at low tide, indicative of SGD, and consistent with the FO‐DTS results.

Oxidation Characterization of Hafnium-Based Ceramics Fabricated by Hot Pressing and Electric Field-Assisted Sintering

NASA Technical Reports Server (NTRS)

Gasch, Matt; Johnson, Sylvia; Marschall, Jochen

2010-01-01

Ceramic borides, such as hafnium diboride (HfB2) and zirconium diboride (ZrB2), are members of a family of materials with extremely high melting temperatures referred to as Ultra High Temperature Ceramics (UHTCs). UHTCs constitute a class of promising materials for use in high temperature applications, such as sharp leading edges on future-generation hypersonic flight vehicles, because of their high melting points. The controlled development of microstructure has become important to the processing of UHTCs, with the prospect of improving their mechanical and thermal properties. The improved oxidation resistance of HfB2 has also become important if this material is to be successfully used at temperatures above 2000 C. Furthermore, the use of UHTCs on the leading edges of vehicles traveling at hypersonic speeds will mean exposure to a mixed oxidation environment comprised of both molecular and atomic oxygen. The current study has investigated the high-temperature oxidation behavior of HfB2-based materials in a pure O2 environment, as well as in environments containing different levels of dissociated oxygen (O/O2). Materials were processed by two techniques: conventional hot pressing (HP) and electric field-assisted sintering (FAS). Their oxidation behavior was evaluated in both a tube furnace at 1250 C for 3 hours and in a simulated re-entry environment in the Advanced Heating Facility (AHF) arcjet at NASA Ames Research Center, during a 10-minute exposure to a cold wall heat flux of 250W/sq cm and stagnation pressure of 0.1-0.2 atm. The microstructure of the different materials was characterized before and after oxidation using scanning electron microscopy (SEM).

A novel approach to synthesize, studies of structural and electrical characteristic of Bi(Ni0.30Ti0.30Fe0.40)O3 nanoceramics

NASA Astrophysics Data System (ADS)

Kumar, Nitin; Shukla, Alok

2018-03-01

In this study, we report a novel approach to synthesize the Bi(Ni0.30Ti0.30Fe0.40)O3 [arbitration BNTF30/40] nanoceramics by standard ceramic method at an ambient temperature of 1013 K. Carbonates and oxides powder were utilised as a raw materials in an appropriate stoichiometric amounts. X-ray diffraction pattern assigned that the BNTF30/40 sample presents a single phase of orthorhombic symmetry. The crystallite size obtain from X-ray data suggests the formation of BNTF30/40 nanoceramics in the range between 20 to 45 nm. Bulk density of the prepared pallets were measured and found to be more than 94 percent. The basic characterization tools have been used respectively with Field Emission Scanning Electron Microscope and Spectroscopy based techniques to obtain the correlation between surface morphology and electrical characteristic of specimen sample. Electrical characteristic of the as- synthesized material was studied in the experimental temperature range between RT to 623 K at different operated frequency (25 kHz - 500 kHz).

Preparation and electrical-property characterization of poly(vinyl chloride)-derived carbon nanosheet by ion beam irradiation-induced carbon clustering and carbonization

NASA Astrophysics Data System (ADS)

Jung, Chan-Hee; Sohn, Joon-Yong; Kim, Hyo-Sub; Hwang, In-Tae; Lee, Hong-Joon; Shin, Junhwa; Choi, Jae-Hak

2018-05-01

In this work, we demonstrated that carbon nanosheet (CNS) can easily be produced by a room-temperature, solid-state proton irradiation-induced clustering of poly(vinyl chloride) (PVC) films followed by carbonization. The results of the optical, chemical, and structural analyses revealed that oxidized and sp2-hybridized carbon clusters were effectively created in the PVC thin film by combined dehydrochlorination and inter-coupling reactions during proton irradiation. This was further converted to pseudo-hexagonally-structured nano-crystalline CNS with 2-D symmetry and metallic transporting character by high-temperature treatment. As a result, the CNS exhibited a very high electrical conductivity (587 S/cm) without a significant change in their thickness, a low surface roughness (0.36 nm), and a high work function (5.11 eV). These findings demonstrate that the radiation-based approach opens new avenues for the design and development of 2-D CNS as a graphene allotrope for the application of electronic devices, including field-effect transistors, electric heating devices, biosensors, supercapacitors, and fuel cells.

AC/DC electrical conduction and dielectric properties of PMMA/PVAc/C60 down-shifting nanocomposite films

NASA Astrophysics Data System (ADS)

El-Bashir, S. M.; Alwadai, N. M.; AlZayed, N.

2018-02-01

Polymer nanocomposite films were prepared by doping fullerene C60 in polymer blend composed of polymethacrylate/polyvinyl acetate blends (PMMA/PVAc) using solution cast technique. The films were characterized by differential scanning calorimeter (DSC), Transmission electron microscope (TEM), DC/AC electrical conductivity and dielectric measurements in the frequency range (100 Hz- 1 MHz). The glass transition temperature, Tg, was increased by increasing the concentration of fullerene C60; this property reflects the increase of thermal stability by increasing the nanofiller content. The DC and AC electrical conductivities were enhanced by increasing C60 concentration due to the electron hopping or tunneling between filled and empty localized states above Tg. The relaxation time was determined from the αβ -relaxations and found to be attenuated by increasing the temperature as a typical behavior of amorphous polymers. The calculated values of thermodynamic parameters revealed the increase of molecular stability by increasing the doping concentration; this feature supports the application of PMMA/PVAc/C60 nanocomposite films in a wide scale of solar energy conversion applications such as luminescent down-shifting (LDS) coatings for photovoltaic cells.

Simultaneous Thermal and Gamma Radiation Aging of Electrical Cable Polymers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fifield, Leonard S.

The polymers used for insulation in nuclear power plant electrical cables are susceptible to aging during long term operation. Elevated temperature is the primary contributor to changes in polymer structure that result loss of mechanical and electrical properties, but gamma radiation is also a significant source of degradation for polymers used within relevant plant locations. Despite many years of polymer degradation research, the combined effects of simultaneous exposure to thermal and radiation stress are not well understood. As nuclear operators contemplate and prepare for extended operations beyond initial license periods, a predictive understanding of exposure-based cable material degradation is becomingmore » an increasingly important input to safety, licensing, operations and economic decisions. We are focusing on carefully-controlled simultaneous thermal and gamma radiation accelerating aging and characterization of the most common nuclear cable polymers to understand the relative contributions of temperature, time, dose and dose rate to changes in cable polymer material structure and properties. Improved understanding of cable performance in long term operation will help support continued sustainable nuclear power generation.« less

Crystallization and Thermoelectric Transport in Semiconductor Micro- and Nanostructures Under Extreme Conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gokirmak, Ali; Silva, Helena

This project focused on thermoelectric transport in semiconductor micro and nanostructures where moderate and typical operating voltages and currents lead to extreme thermal gradients and current densities. Models that describe behavior of semiconducting materials typically assume an equilibrium condition or slight deviations from it. In these cases the generation-recombination processes are assumed to have reached a local equilibrium for a given temperature. Hence, free carrier concentrations and their mobilities, band-gap, thermal conductivity, thermoelectric properties, mobility of atoms and mechanical properties of the material, can be described as a function of temperature. In the case of PN junctions under electrical bias,more » carrier concentrations can change up to ~ 1020 cm-3 and a drift-diffusion approximation is typically used to obtain the carrier concentrations while assuming that the material properties do not change. In non-equilibrium conditions, the assumption that the material properties remain the same may not be valid. While the increased conduction-band electron concentration may not have a drastic effect on the material, large hole concentration is expected to soften the material as ‘a hole’ comes into existence as a broken bond in the lattice. As the hole density approaches 1022 cm-3, the number of bonds holding the lattice together is significantly reduced, making it easier to break additional bonds, reduce band-gap and inhibit phonon transport. As these holes move away from where they were generated, local properties are expected to deviate significantly from the equilibrium case. Hence, temperature alone is not sufficient to describe the behavior of the material. The behavior of the solid material close to a molten region (liquid-solid interfaces) is also expected to deviate from the equilibrium case as a function of hole injection rate, which can be drastically increased or decreased in the presence of an electric field. In the past years we have investigated the possible thermoelectric explanation of asymmetric melting of self-heated Si micro-structures using equilibrium materials’ properties that exist in the literature. We have analyzed the contribution of the electrons and the holes and identified the generation-transport-recombination of minority carriers (GTR) as the reason for an extreme change in the thermal profile in presence of strong generation and electric field. A more complete analysis required construction of models that capture the individual generation and recombination processes to understand the thermal profile as well as the possibility of electronic softening and non-equilibrium melting of the structure below melting temperature. The possibility of melting a material at a lower temperature breaks the correlation between the atomic mobility and the kinetic energy in the system for a given temperature and may allow alternative growth processes. This may also be the mechanism behind ‘amorphization-without-melting in layered structures heated with laser pulses’ that has been reported earlier. The conventional models for semiconductors are constructed for low temperature operation and their projections to higher temperatures do not yield reasonable carrier concentrations. Using these models, the free hole concentrations are calculated to be on the order of 1019 cm-3 at melting, which also do not correlate well with the latent heat of fusion. The melt is expected to correspond to broken bond concentrations on the order of the atomic density (~5x1022 cm-3 for Silicon). Hence, using conventional models the thermoelectric contribution expected from the GTR process is estimated to be much smaller than it likely is. Our work focused on improving the computational models and electrical characterization of materials and devices to better understand thermoelectric trabsport under extremen thermal gradients and current densities. Specifically, during this project, we have - Expanded our computational models to include self-consistent solution of Poisson charge equation (together with current and heat equations currently solved) for improved accuracy of role of bipolar conduction, - Developed a crystallization model incorporating experimentally determined nucleation rates and growth velocities to enable simulation of grain growth, growth-from-melt, filament formation and retention, - Performed high-temperature characterization of relevant materials (including metal contacts, interfacial and insulation layers); electrical and thermal conductivities, Seebeck coefficient, carrier mobility and concentration, - Performed High-speed device-level characterization of metastable amorphous and crystalline phases, crystallization and amorphization dynamics, melting and crystalline growth-from-melt, - Observed and characterized formation of microplasmas in electrically stressed ZnO nanoforests.« less

Pulsed Laser Deposition of BaCe(sub 0.85)Y(sub 0.15)0(sub 3) FILMS

NASA Technical Reports Server (NTRS)

Dynys, F. W.; Sayir, A.

2006-01-01

Pulsed laser deposition has been used to grow nanostructured BaCe(sub 0.85)Y(sub 0.15)0(sub 3) films. The objective is to enhance protonic conduction by reduction of membrane thickness. Sintered samples and laser targets were prepared by sintering BaCe(sub 0.85)Y(sub 0.15)O(sub 3) powders derived by solid state synthesis. Films 2 to 6 m thick were deposited by KrF excimer laser on Si and porous Al2O3 substrates. Nanocrystalline films were fabricated at deposition temperatures of 600-800 C deg at O2 pressure of 30 mTorr and laser fluence of 1.2 J/cm square. Films were characterized by x-ray diffraction, scanning electron microscopy and electrical impedance spectroscopy. Dense single phase BaCe(sub 0.85)Y((sub 0.15) 0(sub 3) films with a columnar growth morphology is observed, preferred crystal growth was found to be dependent upon deposition temperature and substrate type. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C deg to 900 C deg in moist argon. Electrical conduction of the fabricated films was 1 to 4 orders of magnitude lower than the sintered bulk samples. With respect to the film growth direction, activation energy for electrical conduction is 3 times higher in the perpendicular direction than the parallel direction.

Effect of Sintering Temperature on Dielectric Properties of Iron Deficient Nickel-Ferrite

NASA Astrophysics Data System (ADS)

Rani, Renu; Singh, Sangeeta; Juneja, J. K.; Prakash, Chandra; Raina, K. K.

2011-11-01

Nickel Ferrite among all the magneto ceramic materials have been studied very much due to its large number of applications. But there is a large scope of modification of its properties. Thus people still working on it for improvisation of its properties via compositional and structural modifications. Present paper reporting the preparation and characterization of iron deficient Nickel ferrite for different sintering temperature. Ferrite samples having the general formula NiFe1.98O4 were prepared using the standard ceramic method. The phase formation was confirmed by X-ray diffraction technique. The effect of sintering temperature on the electrical properties and resistivity was studied. The data shows that dielectric properties are highly dependent on the sintering temperature.

Corrosion Behavior Of Potential Structural Materials For Use In Nitrate Salts Based Solar Thermal Power Plants

NASA Astrophysics Data System (ADS)

Summers, Kodi

The increasing global demand for electricity is straining current resources of fossil fuels and placing increased pressure on the environment. The implementation of alternative sources of energy is paramount to satisfying global electricity demand while reducing reliance on fossil fuels and lessen the impact on the environment. Concentrated solar power (CSP) plants have the ability to harness solar energy at an efficiency not yet achieved by other technologies designed to convert solar energy to electricity. The problem of intermittency in power production seen with other renewable technologies can be virtually eliminated with the use of molten salt as a heat transfer fluid in CSP plants. Commercial and economic success of CSP plants requires operating at maximum efficiency and capacity which requires high temperature and material reliability. This study investigates the corrosion behavior of structural alloys and electrochemical testing in molten nitrate salts at three temperatures common to CSP plants. Corrosion behavior was evaluated using gravimetric and inductively-coupled plasma optical emission spectroscopy (ICP-OES) analysis. Surface morphology was studied using scanning electron microscopy. Surface oxide structure and chemistry was characterized using X-ray diffraction, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy. Electrochemical behavior of candidate structural alloys Alloy 4130, austenitic stainless steel 316, and super-austenitic Incoloy 800H was evaluated using potentiodynamic polarization characteristics. It was observed that electrochemical evaluation of these candidate materials correlates well with the corrosion behavior observed from gravimetric and ICP-OES analysis. This study identifies that all three alloys exhibited acceptable corrosion in 300°C molten salt while elevated salt temperatures require the more corrosion resistant alloys, stainless steel 316 and 800H. Characterization of the sample surfaces revealed the presence of spinels at lower temperatures, while Fe2O3 was the dominant iron oxide at higher temperatures for each alloy. It is recommended that accelerated corrosion testing be investigated further to evaluate alloys in other molten salt systems considered for utilization in concentrated solar power plants.

A Review: Origins of the Dielectric Properties of Proteins and Potential Development as Bio-Sensors

PubMed Central

Bibi, Fabien; Villain, Maud; Guillaume, Carole; Sorli, Brice; Gontard, Nathalie

2016-01-01

Polymers can be classified as synthetic polymers and natural polymers, and are often characterized by their most typical functions namely their high mechanical resistivity, electrical conductivity and dielectric properties. This bibliography report consists in: (i) Defining the origins of the dielectric properties of natural polymers by reviewing proteins. Despite their complex molecular chains, proteins present several points of interest, particularly, their charge content conferring their electrical and dielectric properties; (ii) Identifying factors influencing the dielectric properties of protein films. The effects of vapors and gases such as water vapor, oxygen, carbon dioxide, ammonia and ethanol on the dielectric properties are put forward; (iii) Finally, potential development of protein films as bio-sensors coated on electronic devices for detection of environmental changes particularly humidity or carbon dioxide content in relation with dielectric properties variations are discussed. As the study of the dielectric properties implies imposing an electric field to the material, it was necessary to evaluate the impact of frequency on the polymers and subsequently on their structure. Characterization techniques, on the one hand dielectric spectroscopy devoted for the determination of the glass transition temperature among others, and on the other hand other techniques such as infra-red spectroscopy for structure characterization as a function of moisture content for instance are also introduced. PMID:27527179

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

NASA Astrophysics Data System (ADS)

Sun, Huarui; Bajo, Miguel Montes; Uren, Michael J.; Kuball, Martin

2015-01-01

Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage "hot spots" at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7-0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which is consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites.

Advanced Electrical Materials and Components Development: An Update

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.

2005-01-01

The primary means to develop advanced electrical components is to develop new and improved materials for magnetic components (transformers, inductors, etc.), capacitors, and semiconductor switches and diodes. This paper will give an update of the Advanced Power Electronics and Components Technology being developed by the NASA Glenn Research Center for use in future Power Management and Distribution subsystems used in space power systems for spacecraft and lunar and planetary surface power. The initial description and status of this technology program was presented two years ago at the First International Energy Conversion Engineering Conference held at Portsmouth, Virginia, August 2003. The present paper will give a brief background of the previous work reported and a summary of research performed the past several years on soft magnetic materials characterization, dielectric materials and capacitor developments, high quality silicon carbide atomically smooth substrates, and SiC static and dynamic device characterization under elevated temperature conditions. The rationale for and the benefits of developing advanced electrical materials and components for the PMAD subsystem and also for the total power system will also be briefly discussed.

A Molecular- and Nano-Electronics Test (MONET) platform fabricated using extreme ultraviolet lithography.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dentinger, Paul M.; Cardinale, Gregory F.; Hunter, Luke L.

2003-12-01

We describe the fabrication and characterization of an electrode array test structure, designed for electrical probing of molecules and nanocrystals. We use Extreme Ultraviolet Lithography (EUVL) to define the electrical test platform features. As fabricated, the platform includes nominal electrode gaps of 0 nm, 40 nm, 60 nm, and 80 nm. Additional variation in electrode gap is achieved by controlling the exposure conditions, such as dose and focus. To enable EUVL based nanofabrication, we develop a novel bi-level photoresist process. The bi-level photoresist consists of a combination of a commercially available polydimethylglutarimide (PMGI) bottom layer and an experimental EUVL photoresistmore » top (imaging) layer. We measure the sensitivity of PMGI to EUV exposure dose as a function of photoresist pre-bake temperature, and using this data, optimize a metal lift-off process. Reliable fabrication of 700 Angstrom thick Au structures with sub-1000 Angstrom critical dimensions is achieved, even without the use of a Au adhesion layer, such as Ti. Several test platforms are used to characterize electrical properties of organic molecules deposited as self assembled monolayers.« less

Thermal Performance Benchmarking

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Xuhui; Moreno, Gilbert; Bennion, Kevin

2016-06-07

The goal for this project is to thoroughly characterize the thermal performance of state-of-the-art (SOA) in-production automotive power electronics and electric motor thermal management systems. Information obtained from these studies will be used to: evaluate advantages and disadvantages of different thermal management strategies; establish baseline metrics for the thermal management systems; identify methods of improvement to advance the SOA; increase the publicly available information related to automotive traction-drive thermal management systems; help guide future electric drive technologies (EDT) research and development (R&D) efforts. The thermal performance results combined with component efficiency and heat generation information obtained by Oak Ridge Nationalmore » Laboratory (ORNL) may then be used to determine the operating temperatures for the EDT components under drive-cycle conditions. In FY16, the 2012 Nissan LEAF power electronics and 2014 Honda Accord Hybrid power electronics thermal management system were characterized. Comparison of the two power electronics thermal management systems was also conducted to provide insight into the various cooling strategies to understand the current SOA in thermal management for automotive power electronics and electric motors.« less

A novel bio electro active alginate-aniline tetramer/ agarose scaffold for tissue engineering: synthesis, characterization, drug release and cell culture study.

PubMed

Atoufi, Zhale; Zarrintaj, Payam; Motlagh, Ghodratollah Hashemi; Amiri, Anahita; Bagher, Zohreh; Kamrava, Seyed Kamran

2017-10-01

In this study, synthesis of a novel biocompatible stimuli-responsive conducting hydrogel based on agarose/alginate-aniline tetramer with the capability of a tailored electrically controlled drug-release for neuroregeneration is investigated. First, aniline tetramer is synthesized and grafted onto sodium alginate. Then, this material is added to agarose as an electrical conductivity modifier to obtain Agarose/alginate-aniline tetramer hydrogel. The synthesized materials are characterized by H NMR and FTIR. The hydrogels are prepared with varying content of aniline tetramer and their swelling-deswelling and shape memory behavior is evaluated. The electroactivity and ionic conductivity of hydrogels against temperature is measured. The sample with 10% aniline tetramer (AT10) reveals the highest ionic conductivity. In MTT and SEM assays, AT10 shows the best cell viability and cell proliferation due to its highest ionic conductivity highlighting the fact that electrical stimuli cell signaling. Hydrogels also represent great potentials for passive and electro-stimulated dexamethasone release. These results demonstrate that the newly developed conducting hydrogels are promising materials for neuroregenerative medicine.

Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition.

PubMed

Utama, M Iqbal Bakti; Lu, Xin; Zhan, Da; Ha, Son Tung; Yuan, Yanwen; Shen, Zexiang; Xiong, Qihua

2014-11-07

Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate interpretation of the electrical characterization results from the sample. An electrical transport study, enabled by the SU-8 patterning, showed a variable range hopping behavior at high temperatures.

Growth and characterization of pure and Ca2+ doped MnHg(SCN)4 single crystals

NASA Astrophysics Data System (ADS)

Latha, C.; Mahadevan, C. K.; Guo, Li; Liu, Jinghe

2018-05-01

Manganese-mercury thiocyanate, MnHg(SCN)4, crystal is considered to be an important organometallic nonlinear optical (NLO) material exhibiting higher thermal stability and second harmonic generation (SHG) efficiency. In order to understand the effect of Ca2+ as an impurity on the physicochemical properties, we have grown pure and Ca2+ doped (with a concentration of 1 mol%) MnHg(SCN)4 single crystals by the free evaporation of solvent method and characterized structurally, chemically, optically and electrically by adopting the available standard methods. Results obtained indicate that Ca2+ doping increases significantly the optical transmittance, SHG efficiency, and DC electrical conductivity and decreases the dielectric loss factor (improves the crystal quality), and AC electrical conductivity without distorting the crystal structure. Also, the low dielectric constant (εr) values observed for both the pure and doped crystals considered at near ambient temperatures indicate the possibility of using these crystals not only as potential NLO materials (useful in the photonics industry) but also as promising low εr value dielectric materials (useful in the microelectronics industry).

Characterization of instrumented sites for the onsite fuel-cell field-test project. Volume 4. Topical report, 1983-1985

DOE Office of Scientific and Technical Information (OSTI.GOV)

Racine, W.C.; Campillo, C.J.

During the site-selection phase of the Onsite Fuel-Cell Field Test, nearly one hundred sites throughout the U.S. were each instrumented with a standard data-acquisition system (DAS) to collect hourly electrical and thermal data for one year. Seventy of those sites are included in the report. Each site's electrical and thermal systems were instrumented including ambient temperature, electrical demands, building gas usage, and other parameters necessary to calculate building thermal loads. Multifamily residential, commercial, and light industrial sites were instrumented. Approximately twenty market sectors were represented including restaurants, hospitals, hotels, apartments, health clubs, nursing homes, and food-processing plants. The primary usemore » of the data was to determine site compatibility for the installation of 40-kW fuel-cell power plants. However, the collected energy data and site-specific information summarized in this comprehensive report may also be useful for other applications such as market characterization and simulation of new or improved energy-utilization equipment in actual sites. This volume covers metal-plating facilities, nurseries, nursing homes, office buildings and other industrial applications.« less

Outstanding issues for new geothermal resource assessments

USGS Publications Warehouse

Williams, C.F.; Reed, M.J.

2005-01-01

A critical question for the future energy policy of the United States is the extent to which geothermal resources can contribute to an ever-increasing demand for electricity. Electric power production from geothermal sources exceeds that from wind and solar combined, yet the installed capacity falls far short of the geothermal resource base characterized in past assessments, even though the estimated size of the resource in six assessments completed in the past 35 years varies by thousands of Megawatts-electrical (MWe). The U. S. Geological Survey (USGS) is working closely with the Department of Energy's (DOE) Geothermal Research Program and other geothermal organizations on a three-year effort to produce an updated assessment of available geothermal resources. The new assessment will introduce significant changes in the models for geothermal energy recovery factors, estimates of reservoir permeability, limits to temperatures and depths for electric power production, and include the potential impact of evolving Enhanced (or Engineered) Geothermal Systems (EGS) technology.

Characterization of triple layers

NASA Astrophysics Data System (ADS)

Otero, Toribio F.; Cortes, M. Teresa

2001-07-01

We reported the characterization of a macroscopic electrochemomechanical actuator like triple layer (3x1 cm) formed by polypyrrole)/double- sided, non-conducting and flexible tape/ polypyrrole that works in liquid electrolytes under electrochemical control. This triple layer has characteristics of artificial muscle. The influence of variables that control the volume change in the polymer as electrolyte concentration, or temperature has been studied. Variations of time, energy and charge under different conditions are described. We have found that the triple layer acts, at the same time, as sensor and actuator. Therefore, physical magnitudes like the electrolyte concentration or the temperature in the cell can be obtained from electrical energy consumed by a muscle. We have evaluated the influence of variables as area of the triple layer or the trailing weight, which don't participate in the electrochemical reaction. We propose an explication to the results, which show a correlation between the trailed mass and the consumed charge required to move a constant angle those masses by the triple layer. When different surface areas of the triple layer has been evaluated we found that the consumed electrical charge is proportional to area (the mass) of the triple layer. The triple layer can make macroscopical movements in short times, their position is absolutely controlled with the electrical charge, and it has capacity to lift masses. These characteristics allow their use in the design of tools. So, we present a macroscopic tool constituted by two triple layers, which allows catch and translate objects in liquid medium (nipper).

Electrical Characteristics CuFe{sub 2}O{sub 4} Thick Film Ceramics Made with Different Screen Size Utilizing Fe{sub 2}O{sub 3} Nanopowder Derived from Yarosite for NTC Thermistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiendartun,; Syarif, Dani Gustaman

2010-10-24

Fabrication of CuFe{sub 2}O{sub 4} thick film ceramics utilizing Fe{sub 2}O{sub 3} derived from yarosite using screen printing technique for NTC thermistor has been carried out. Effect of thickness variation due to different size of screen (screen 225; 300 and 375 mesh) has been studied. X-ray diffraction analyses (XRD) was done to know crystal structure and phases formation. SEM analyses was carried out to know microstructure of the films. Electrical properties characterization was done through measurement of electrical resistance at various temperatures (room temperature to 100 deg. C). The XRD data showed that the films crystalize in tetragonal spinel. Themore » SEM images showed that the screen with the smaller of the hole size, made the grain size was bigger. Electrical data showed that the larger the screen different size thickness variation (mesh), the larger the resistance, thermistor constant and sensitivity. From the electrical characteristics data, it was known that the electrical characteristics of the CuFe{sub 2}O{sub 4} thick film ceramics followed the NTC characteristic. The value of B and R{sub RT} of the produced CuFe{sub 2}O{sub 4} ceramics namely B = 3241-3484 K and R{sub RT} = 25.6-87.0 M Ohm, fitted market requirement.« less

Crystal growth and characterization of bulk Sb2Te3 topological insulator

NASA Astrophysics Data System (ADS)

Sultana, Rabia; Gurjar, Ganesh; Patnaik, S.; Awana, V. P. S.

2018-04-01

The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 °C), followed by slow cooling (2 °C/h). As grown Sb2Te3 crystals are analysed for various physical properties by x-ray diffraction (XRD), Raman Spectroscopy, Scanning Electron Microscopy (SEM) coupled with Energy Dispersive x-ray Spectroscopy (EDAX) and electrical measurements under magnetic field (6 Tesla) down to low temperature (2.5 K). The XRD pattern revealed the growth of synthesized Sb2Te3 sample along (00l) plane, whereas the SEM along with EDAX measurements displayed the layered structure with near stoichiometric composition, without foreign contamination. The Raman scattering studies displayed known ({{{{A}}}1{{g}}}1, {{{{E}}}{{g}}}2 and {{{{A}}}1{{g}}}2) vibrational modes for the studied Sb2Te3. The temperature dependent electrical resistivity measurements illustrated the metallic nature of the as grown Sb2Te3 single crystal. Further, the magneto—transport studies represented linear positive magneto-resistance (MR) reaching up to 80% at 2.5 K under an applied field of 6 Tesla. The weak anti localization (WAL) related low field (±2 Tesla) magneto-conductance at low temperatures (2.5 K and 20 K) has been analysed and discussed using the Hikami—Larkin—Nagaoka (HLN) model. Summarily, the short letter reports an easy and versatile method for crystal growth of bulk Sb2Te3 topological insulator (TI) and its brief physical property characterization.

Design and characterization of an ocean wave powered lifejacket using 2DOF floating boards

NASA Astrophysics Data System (ADS)

Mi, Jia; Xu, Lin; Yang, Yaling; Zuo, Lei

2018-04-01

Lifejacket is an indispensable life-saving equipment for ships and airplanes. Traditional lifejacket is designed to prevent human from drowning. However, the water temperature is usually low, especially in winter, which significantly reduces the human body temperature and leads to death. Meanwhile, power is critical for drowning people to use emergency communication equipment. This paper proposed an ocean wave powered lifejacket using 2DOF floating boards to provide both buoyance and electricity for drowning people. Hence, they can use this continuous electric power to keep key body warm and send distress signal. This lifejacket is featured with two 2DOF floating boards and the mechanical motion rectifier (MMR) can convert the 2-DOF motions to the unidirectional rotation of generator. The design principle is illustrated and the dynamic modelling for the 2-DOF motions has been analyzed. Bench test and lake test have been conducted to validate the design concept.

Enhancing CO2 electrolysis through synergistic control of non-stoichiometry and doping to tune cathode surface structures

PubMed Central

Ye, Lingting; Zhang, Minyi; Huang, Ping; Guo, Guocong; Hong, Maochun; Li, Chunsen; Irvine, John T. S.; Xie, Kui

2017-01-01

Sustainable future energy scenarios require significant efficiency improvements in both electricity generation and storage. High-temperature solid oxide cells, and in particular carbon dioxide electrolysers, afford chemical storage of available electricity that can both stabilize and extend the utilization of renewables. Here we present a double doping strategy to facilitate CO2 reduction at perovskite titanate cathode surfaces, promoting adsorption/activation by making use of redox active dopants such as Mn linked to oxygen vacancies and dopants such as Ni that afford metal nanoparticle exsolution. Combined experimental characterization and first-principle calculations reveal that the adsorbed and activated CO2 adopts an intermediate chemical state between a carbon dioxide molecule and a carbonate ion. The dual doping strategy provides optimal performance with no degradation being observed after 100 h of high-temperature operation and 10 redox cycles, suggesting a reliable cathode material for CO2 electrolysis. PMID:28300066

Investigation of HCl-based surface treatment for GaN devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okada, Hiroshi, E-mail: okada@ee.tut.ac.jp; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580; Shinohara, Masatohi

2016-02-01

Surface treatments of GaN in HCl-based solutions are studied by X-ray photoelectron spectroscopy (XPS) and electrical characterization of fabricated GaN surfaces. A dilute-HCl treatment (HCl:H{sub 2}O=1:1) at room temperature and a boiled-HCl treatment (undiluted HCl) at 108°C are made on high-temperature annealed n-GaN. From the XPS study, removal of surface oxide by the dilute-HCl treatment was found, and more thoroughly oxide-removal was confirmed in the boiled-HCl treatment. Effect of the surface treatment on electrical characteristics on AlGaN/GaN transistor is also studied by applying treatment processes prior to the surface SiN deposition. Increase of drain current is found in boiled-HCl treatedmore » samples. The results suggest that the boiled-HCl treatment is effective for GaN device fabrication.« less

Electrical properties and Raman studies of phase transitions in ferroelectric [N(CH3)4]2CoCl2Br2

NASA Astrophysics Data System (ADS)

Ben Mohamed, C.; Karoui, K.; Bulou, A.; Ben Rhaiem, A.

2018-03-01

The present paper accounted for the synthesis, electric properties and vibrational spectroscopy of [N(CH3)4]2CoCl2Br2. The dielectric spectra were measured in the frequency range 10-1-105 Hz and temperature interval from 223 to 393 K. The dielectical properties confirm the ferroelectric-paraelectric phase transition at 290 K, which is reported by Abdallah Ben Rhaiem et al. (2013). The equivalent circuit based on the Z-View-software was proposed and the conduction mechanisms were determined. The obtained results have been discussed in terms of the correlated barrier hopping model (CBH) in phase I and non-overlapping small polaron tunneling model (NSPT) in phases II and III. Raman spectra as function temperature have been used to characterize the phase transitions and their nature, which indicates a change of the some peak near the transitions phase.

On the electrical characterization of platinum octaethylporphyrin (PtOEP)/Si hybrid device

NASA Astrophysics Data System (ADS)

Abuelwafa, A. A.; El-Denglawey, A.; Dongol, M.; El-Nahass, M. M.; Ebied, M. S.; Soga, T.

2018-01-01

The electrical properties of Au/PtOEP/p-Si/Al and Au/PtOEP/n-Si/Al devices were studied in terms of current-voltage I- V characteristics at different temperatures ranging from 308 to 388 K. The two diodes were fabricated with the same qualifications. They showed a rectification behavior. The conduction mechanisms at forward and reverse bias and diode parameters as a function of the temperature for these devices were determined and discussed. The variation of the C -2- V characteristics for two diodes exhibited a straight line fit which supports the abrupt diode type. The interface state density N ss was determined from the I- V and C- V data using Card and Rhoderick's model. Also, the impedance spectroscopy plots for the two diodes and suitable equivalent circuit model were established to evaluate the details of interface carrier transfer and recombination processes.

Development of nanosized lanthanum strontium aluminum manganite as electrodes for potentiometric oxygen sensor

DOE PAGES

Mullen, Max R.; Spirig, John V.; Hoy, Julia; ...

2014-11-01

Nanocrystalline La0.8Sr0.2Al0.9Mn0.1O3 (LSAM) was synthesized by a microwave-assisted citrate method, and characterized by electron microscopy and X-ray diffraction. Electrical behavior of LSAM was investigated by impedance spectroscopy and activation energy of conduction was obtained. Joining of sintered bodies of LSAM and yttria-stabilized tetragonal zirconia polycrystals (YTZP), an extensively studied oxygen ion conducting electrolyte, was examined by isostatic hot pressing methods. Characteristics of the joining region were evaluated with microprobe Raman spectroscopy, and products formed at the interface, primarily strontium zirconate, was confirmed by examination of high temperature chemical reaction between LSAM and YTZP powders. Finally, the electrical properties of themore » LSAM were exploited for development of a high temperature oxygen sensor in which LSAM functioned as the electrode and YTZP as electrolyte.« less

The time and temperature dependence of the thermoelectric properties of silicon-germanium alloy

NASA Technical Reports Server (NTRS)

Raag, V.

1975-01-01

Experimental data on the electrical resistivity and Seebeck coefficient of n-type and p-type silicon-germanium alloys are analyzed in terms of a solid-state dopant precipitation model proposed by Lifshitz and Slyozov (1961). Experimental findings on the time and temperature dependence of the thermal conductivity of these two types of alloy indicate that the thermal conductivity of silicon-germanium alloys changes with time, contrary to previous hypothesis. A preliminary model is presented which stipulates that the observed thermal conductivity decrease in silicon-germanium alloys is due partly to dopant precipitation underlying the electrical property changes and partly to enhanced alloying of the material. It is significant that all three properties asymptotically approach equilibrium values with time. Total characterization of these properties will enable the time change to be fully compensated in the design of a thermoelectric device employing silicon-germanium alloys.

Thermoelectric properties of conducting polyaniline/BaTiO3 nanoparticle composite films

NASA Astrophysics Data System (ADS)

Anno, H.; Yamaguchi, K.; Nakabayashi, T.; Kurokawa, H.; Akagi, F.; Hojo, M.; Toshima, N.

2011-05-01

Conducting polyaniline (PANI)/BaTiO3 nanoparticle composite films with different molar ratio values R=1, 5, 10, and 100 have been prepared on a quartz substrate by casting the m-cresol solution of PANI, (±)-10-camphorsulfonic acid (CSA) and BaTiO3 nanoparticle with an average diameter of about 20 nm. The CSA-doped PANI/BaTiO3 composite films were characterized by x-ray diffraction, Fourier transform infrared spectroscopy, and UV-Vis transmission spectroscopy. The Seebeck coefficient and the electrical conductivity of the films with different R values, together with CSA-doped PANI films, were measured in the temperature range from room temperature to ~400 K. The relation between the Seebeck coefficient and the electrical conductivity in the composite films are discussed from a comparison of them with those of CSA-doped PANI films and other PANI composite films.

Electrical characteristics of Graphene based Field Effect Transistor (GFET) biosensor for ADH detection

NASA Astrophysics Data System (ADS)

Selvarajan, Reena Sri; Hamzah, Azrul Azlan; Majlis, Burhanuddin Yeop

2017-08-01

First pristine graphene was successfully produced by mechanical exfoliation and electrically characterized in 2004 by Andre Geim and Konstantin Novoselov at University of Manchester. Since its discovery in 2004, graphene also known as `super' material that has enticed many researchers and engineers to explore its potential in ultrasensitive detection of analytes in biosensing applications. Among myriad reported sensors, biosensors based on field effect transistors (FETs) have attracted much attention. Thus, implementing graphene as conducting channel material hastens the opportunities for production of ultrasensitive biosensors for future device applications. Herein, we have reported electrical characteristics of graphene based field effect transistor (GFET) for ADH detection. GFET was modelled and simulated using Lumerical DEVICE charge transport solver (DEVICE CT). Electrical characteristics comprising of transfer and output characteristics curves are reported in this study. The device shows ambipolar curve and achieved a minimum conductivity of 0.23912 e5A at Dirac point. However, the curve shifts to the left and introduces significant changes in the minimum conductivity as drain voltage is increased. Output characteristics of GFET exhibits linear Id - Vd dependence characteristics for gate voltage ranging from 0 to 1.5 V. In addition, behavior of electrical transport through GFET was analyzed for various simulation temperatures. It clearly proves that the electrical transport in GFET is dependent on the simulation temperature as it may vary the maximum resistance in channel of the device. Therefore, this unique electrical characteristics of GFET makes it as a promising candidate for ultrasensitive detection of small biomolecules such as ADH in biosensing applications.

Multiferroic BiFeO3 thin films processed via chemical solution deposition: Structural and electrical characterization

NASA Astrophysics Data System (ADS)

Iakovlev, S.; Solterbeck, C.-H.; Kuhnke, M.; Es-Souni, M.

2005-05-01

Polycrystalline BiFeO3 thin films were fabricated on (111)Pt/Ti/SiO2/Si substrates via Bi-acetate- and Fe-acetylacetonate-based chemical solution deposition and spin-coating techniques. The processing parameters were optimized in order to obtain films with high resistivity. The optical properties (refractive indices and extinction coefficients) were measured by means of ellipsometry (HeNe laser, λ=632.8Å). Microstructure characterization was made by means of atomic force microscopy, grazing incidence x-ray diffractometry (XRD), and texture analysis. Additionally, powders prepared from a stoichiometric precursor were investigated by means of thermogravimetric and differential thermal analyses and XRD. It is demonstrated that the formation of perovskite-type BiFeO3 is accompanied by the appearance of bismuth oxide at low temperatures which then transforms into Bi36Fe2O57. For the films it was found that annealing in oxygen leads to higher indices of refraction, lower roughness, and smaller grain size. Complete crystallization of the films was achieved at a substantially lower temperature compared to that of the powders. A (100) (pseudocubic) out-of-plane preferred orientation was revealed for specimens annealed in air and oxygen. It is supposed that the crystal lattice of the thin film is close to cubic possibly due to stress development at the substrate/film interface. The electrical properties of the films were measured at room temperature by impedance analysis. The piezoelectric properties were determined using a laser vibrometer. Room temperature resistances measured at 1 kHz for metal-film-metal configurations for the specimens annealed in air and O2 were 14 Ω and 1.35 kΩ, respectively. This is explained in terms of the high sensitivity of the oxidation state (+2 or +3) of iron ions to oxygen stoichiometry in the specimens. Further electrical characterization of the specimen annealed in O2 revealed very low frequency dispersion of the dielectric constant. A dielectric loss of 1% or less was detected in a wide range of frequency. The films annealed in oxygen showed piezoelectric activity with a value of the piezoelectric coefficient d33 of 12 pm/V. A relatively weak ferroelectricity (remnant polarization 2Pr of approximately 1μC/cm2) was detected for the specimens annealed in oxygen.

Quantum electric-dipole liquid on a triangular lattice.

PubMed

Shen, Shi-Peng; Wu, Jia-Chuan; Song, Jun-Da; Sun, Xue-Feng; Yang, Yi-Feng; Chai, Yi-Sheng; Shang, Da-Shan; Wang, Shou-Guo; Scott, James F; Sun, Young

2016-02-04

Geometric frustration and quantum fluctuations may prohibit the formation of long-range ordering even at the lowest temperature, and therefore liquid-like ground states could be expected. A good example is the quantum spin liquid in frustrated magnets. Geometric frustration and quantum fluctuations can happen beyond magnetic systems. Here we propose that quantum electric-dipole liquids, analogues of quantum spin liquids, could emerge in frustrated dielectrics where antiferroelectrically coupled electric dipoles reside on a triangular lattice. The quantum paraelectric hexaferrite BaFe12O19 with geometric frustration represents a promising candidate for the proposed electric-dipole liquid. We present a series of experimental lines of evidence, including dielectric permittivity, heat capacity and thermal conductivity measured down to 66 mK, to reveal the existence of an unusual liquid-like quantum phase in BaFe12O19, characterized by itinerant low-energy excitations with a small gap. The possible quantum liquids of electric dipoles in frustrated dielectrics open up a fresh playground for fundamental physics.

Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes

PubMed Central

Çetinkaya, S.; Çetinkara, H. A.; Bayansal, F.; Kahraman, S.

2013-01-01

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. Conventional I-V and Norde's methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations. PMID:23766670

Electrical properties of a liquid crystal dispersed in an electrospun cellulose acetate network

PubMed Central

Danila, Octavian; Ganea, Constantin Paul

2018-01-01

Electro-optical devices that work in a similar fashion as PDLCs (polymer-dispersed liquid crystals), produced from cellulose acetate (CA) electrospun fibers deposited onto indium tin oxide coated glass and a nematic liquid crystal (E7), were studied. CA and the CA/liquid crystal composite were characterized by multiple investigation techniques, such as polarized optical microscopy, dielectric spectroscopy and impedance measurements. Dielectric constant and electric energy loss were studied as a function of frequency and temperature. The activation energy was evaluated and the relaxation time was obtained by fitting the spectra of the dielectric loss with the Havriliak–Negami functions. To determine the electrical characteristics of the studied samples, impedance measurements results were treated using the Cole–Cole diagram and the three-element equivalent model. PMID:29441261

Electrical properties of a liquid crystal dispersed in an electrospun cellulose acetate network.

PubMed

Maximean, Doina Manaila; Danila, Octavian; Almeida, Pedro L; Ganea, Constantin Paul

2018-01-01

Electro-optical devices that work in a similar fashion as PDLCs (polymer-dispersed liquid crystals), produced from cellulose acetate (CA) electrospun fibers deposited onto indium tin oxide coated glass and a nematic liquid crystal (E7), were studied. CA and the CA/liquid crystal composite were characterized by multiple investigation techniques, such as polarized optical microscopy, dielectric spectroscopy and impedance measurements. Dielectric constant and electric energy loss were studied as a function of frequency and temperature. The activation energy was evaluated and the relaxation time was obtained by fitting the spectra of the dielectric loss with the Havriliak-Negami functions. To determine the electrical characteristics of the studied samples, impedance measurements results were treated using the Cole-Cole diagram and the three-element equivalent model.

Using WRF-Urban to Assess Summertime Air Conditioning Electric Loads and Their Impacts on Urban Weather in Beijing

NASA Astrophysics Data System (ADS)

Xu, Xiaoyu; Chen, Fei; Shen, Shuanghe; Miao, Shiguang; Barlage, Michael; Guo, Wenli; Mahalov, Alex

2018-03-01

The air conditioning (AC) electric loads and their impacts on local weather over Beijing during a 5 day heat wave event in 2010 are investigated by using the Weather Research and Forecasting (WRF) model, in which the Noah land surface model with multiparameterization options (Noah-MP) is coupled to the multilayer Building Effect Parameterization and Building Energy Model (BEP+BEM). Compared to the legacy Noah scheme coupled to BEP+BEM, this modeling system shows a better performance, decreasing the root-mean-square error of 2 m air temperature to 1.9°C for urban stations. The simulated AC electric loads in suburban and rural districts are significantly improved by introducing the urban class-dependent building cooled fraction. Analysis reveals that the observed AC electric loads in each district are characterized by a common double peak at 3 p.m. and at 9 p.m. local standard time, and the incorporation of more realistic AC working schedules helps reproduce the evening peak. Waste heat from AC systems has a smaller effect ( 1°C) on the afternoon 2 m air temperature than the evening one (1.5 2.4°C) if AC systems work for 24 h and vent sensible waste heat into air. Influences of AC systems can only reach up to 400 m above the ground for the evening air temperature and humidity due to a shallower urban boundary layer than daytime. Spatially varying maps of AC working schedules and the ratio of sensible to latent waste heat release are critical for correctly simulating the cooling electric loads and capturing the thermal stratification of urban boundary layer.

Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion

NASA Astrophysics Data System (ADS)

Kocyigit, Adem; Orak, İkram; Turut, Abdulmecit

2018-03-01

Owing to importance of ZnO in electronics, Au/ZnO/n-type Si device was fabricated to investigate its dielectric properties by aid of capacitance-conductance-voltage measurements. While the ZnO thin film layer on the n-type Si was formed by atomic layer deposition (ALD) technique, the rectifying and ohmic contacts were obtained by thermal evaporation. The surface morphology of ZnO thin film was characterized using atomic force microscopy (AFM) to show its compatibility as interfacial layer in the Au/ZnO/n-type Si device. The dielectric properties of the device were examined in terms of dielectric parameters such as dielectric constant (ɛ‧), dielectric loss (ɛ″), loss tangent (tan δ), the real and imaginary parts of electric modulus (M ‧ and M ″) and ac electrical conductivity (σ) depending on applied voltages (from -1 to 2 V) and temperatures (from 140 K to 360 K) ranges. The results have revealed that interfacial polarization and charge carriers are the important parameters to affect the dielectric properties of the device with changing temperature. The device can be used at wide range temperatures for diode applications.

Study on a high capacity two-stage free piston Stirling cryocooler working around 30 K

NASA Astrophysics Data System (ADS)

Wang, Xiaotao; Zhu, Jian; Chen, Shuai; Dai, Wei; Li, Ke; Pang, Xiaomin; Yu, Guoyao; Luo, Ercang

2016-12-01

This paper presents a two-stage high-capacity free-piston Stirling cryocooler driven by a linear compressor to meet the requirement of the high temperature superconductor (HTS) motor applications. The cryocooler system comprises a single piston linear compressor, a two-stage free piston Stirling cryocooler and a passive oscillator. A single stepped displacer configuration was adopted. A numerical model based on the thermoacoustic theory was used to optimize the system operating and structure parameters. Distributions of pressure wave, phase differences between the pressure wave and the volume flow rate and different energy flows are presented for a better understanding of the system. Some characterizing experimental results are presented. Thus far, the cryocooler has reached a lowest cold-head temperature of 27.6 K and achieved a cooling power of 78 W at 40 K with an input electric power of 3.2 kW, which indicates a relative Carnot efficiency of 14.8%. When the cold-head temperature increased to 77 K, the cooling power reached 284 W with a relative Carnot efficiency of 25.9%. The influences of different parameters such as mean pressure, input electric power and cold-head temperature are also investigated.

Thermal Profiling of Residential Energy Use

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albert, A; Rajagopal, R

This work describes a methodology for informing targeted demand-response (DR) and marketing programs that focus on the temperature-sensitive part of residential electricity demand. Our methodology uses data that is becoming readily available at utility companies-hourly energy consumption readings collected from "smart" electricity meters, as well as hourly temperature readings. To decompose individual consumption into a thermal-sensitive part and a base load (non-thermally-sensitive), we propose a model of temperature response that is based on thermal regimes, i.e., unobserved decisions of consumers to use their heating or cooling appliances. We use this model to extract useful benchmarks that compose thermal profiles ofmore » individual users, i.e., terse characterizations of the statistics of these users' temperature-sensitive consumption. We present example profiles generated using our model on real consumers, and show its performance on a large sample of residential users. This knowledge may, in turn, inform the DR program by allowing scarce operational and marketing budgets to be spent on the right users-those whose influencing will yield highest energy reductions-at the right time. We show that such segmentation and targeting of users may offer savings exceeding 100% of a random strategy.« less

Corrosion Monitors for Embedded Evaluation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Robinson, Alex L.; Pfeifer, Kent B.; Casias, Adrian L.

2017-05-01

We have developed and characterized novel in-situ corrosion sensors to monitor and quantify the corrosive potential and history of localized environments. Embedded corrosion sensors can provide information to aid health assessments of internal electrical components including connectors, microelectronics, wires, and other susceptible parts. When combined with other data (e.g. temperature and humidity), theory, and computational simulation, the reliability of monitored systems can be predicted with higher fidelity.

Optical and electrical studies of cerium mixed oxides

NASA Astrophysics Data System (ADS)

Sherly, T. R.; Raveendran, R.

2014-10-01

The fast development in nanotechnology makes enthusiastic interest in developing nanomaterials having tailor made properties. Cerium mixed oxide materials have received great attention due to their UV absorption property, high reactivity, stability at high temperature, good electrical property etc and these materials find wide applications in solid oxide fuel cells, solar control films, cosmetics, display units, gas sensors etc. In this study cerium mixed oxide compounds were prepared by co-precipitation method. All the samples were doped with Zn (II) and Fe (II). Preliminary characterizations such as XRD, SEM / EDS, TEM were done. UV - Vis, Diffuse reflectance, PL, FT-IR, Raman and ac conductivity studies of the samples were performed.

Surface morphology and improved electrical conductivity of camphorsulfonic acid surfactant based PANI nano composite

NASA Astrophysics Data System (ADS)

Niranjana, M.; Yesappa, L.; Ashokkumar, S. P.; Vijeth, H.; Devendrappa, H.

2018-05-01

Polyaniline and its composites at different wt. % of Copper oxide nano (PCC1 and PCC5) were prepared by in-situ chemical reaction method. The composites were characterized by Fourier Transform Infrared (FT-IR) Spectroscopy, Field Emission Scanning Electron Microscopy (FESEM) and the impedance measurement was carried out at different temperature. FTIR and SEM image reveals the presence of copper metal ions uniformly embedded into PANI. The dc electrical conductivity increases with increasing nano concentration in PANI and achieved high conductivity for PCC5. These results are suggesting PCC composite is a prominent candidate for supercapacitor properties and optoelectronics devices applications.

Electrical and magnetic properties of nano-sized magnesium ferrite

NASA Astrophysics Data System (ADS)

T, Smitha; X, Sheena; J, Binu P.; Mohammed, E. M.

2015-02-01

Nano-sized magnesium ferrite was synthesized using sol-gel techniques. Structural characterization was done using X-ray diffractometer and Fourier Transform Infrared Spectrometer. Vibration Sample Magnetometer was used to record the magnetic measurements. XRD analysis reveals the prepared sample is single phasic without any impurity. Particle size calculation shows the average crystallite size of the sample is 19nm. FTIR analysis confirmed spinel structure of the prepared samples. Magnetic measurement study shows that the sample is ferromagnetic with high degree of isotropy. Hysterisis loop was traced at temperatures 100K and 300K. DC electrical resistivity measurements show semiconducting nature of the sample.

In situ high-temperature characterization of AlN-based surface acoustic wave devices

NASA Astrophysics Data System (ADS)

Aubert, Thierry; Bardong, Jochen; Legrani, Ouarda; Elmazria, Omar; Badreddine Assouar, M.; Bruckner, Gudrun; Talbi, Abdelkrim

2013-07-01

We report on in situ electrical measurements of surface acoustic wave delay lines based on AlN/sapphire structure and iridium interdigital transducers between 20 °C and 1050 °C under vacuum conditions. The devices show a great potential for temperature sensing applications. Burnout is only observed after 60 h at 1050 °C and is mainly attributed to the agglomeration phenomena undergone by the Ir transducers. However, despite the vacuum conditions, a significant oxidation of the AlN film is observed, pointing out the limitation of the considered structure at least at such extreme temperatures. Original structures overcoming this limitation are then proposed and discussed.

Temperature dependent thermoelectric property of reduced graphene oxide-polyaniline composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitra, Mousumi, E-mail: mousumimitrabesu@gmail.com; Banerjee, Dipali, E-mail: dipalibanerjeebesu@gmail.com; Kargupta, Kajari, E-mail: karguptakajari2010@gmail.com

2016-05-06

A composite material of reduced graphene oxide (rG) nanosheets with polyaniline (PANI) protonated by 5-sulfosalicylic acid has been synthesized via in situ oxidative polymerization method. The morphological and spectral characterizations have been done using FESEM and XRD measurements. The thermoelectric (TE) properties of the reduced graphene oxide-polyaniline composite (rG-P) has been studied in the temperature range from 300-400 K. The electrical conductivity and the Seebeck coefficient of rG-P is higher than the of pure PANI, while the thermal conductivity of the composite still keeps much low value ensuing an increase in the dimensionless figure of merit (ZT) in the wholemore » temperature range.« less

Temperature dependent fabrication of cost-effective and nontoxic Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films for solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Digraskar, Renuka, E-mail: renukad120@gmail.com; Sathe, Bhaskar, E-mail: bhaskarsathe@gmail.com; Gattu, Ketan

2016-05-06

In the present work, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been fabricated onto the glass substrate by simple and economic chemical bath deposition technique{sup 1}, and the effect of deposition temperature is reported. The deposition temperatures used were 50°C and 60°C for a deposition time of 60 min, which are significantly lower than earlier reports. These CZTS thin films were characterized for optical, electrical, morphological and elemental properties using, UV-Vis spectrophotometer, I-V system for photosensitivity, two probe resistivity system for resistivity, scanning electron microscopy, energy dispersive spectroscopy and Raman spectroscopy.

Elevated exhaust temperature, zoned, electrically-heated particulate matter filter

DOEpatents

Gonze, Eugene V [Pinckney, MI; Bhatia, Garima [Bangalore, IN

2012-04-17

A system includes an electrical heater and a particulate matter (PM) filter that is arranged one of adjacent to and in contact with the electrical heater. A control module selectively increases an exhaust gas temperature of an engine to a first temperature and that initiates regeneration of the PM filter using the electrical heater while the exhaust gas temperature is above the first temperature. The first temperature is greater than a maximum exhaust gas temperature at the PM filter during non-regeneration operation and is less than an oxidation temperature of the PM.

Synthesis, Transport, and Thermoelectric Studies of Topological Dirac Semimetal Cd3As2 for Room Temperature Waste Heat Recovery and Energy Conversion

NASA Astrophysics Data System (ADS)

Hosseini, Tahereh A.

Rising rates of the energy consumption and growing concerns over the climate change worldwide have made energy efficiency an urgent problem to address. Nowadays, almost two-thirds of the energy produced by burning fossil fuels to generate electrical power is lost in the form of the heat. On this front, increasing electrical power generation through a waste heat recovery remains one of the highly promising venues of the energy research. Thermo-electric generators (TEGs) directly convert thermal energy into electrical and are the prime candidates for application in low-grade thermal energy/ waste heat recovery. The key commercial TE materials, e.g. PbTe and Bi2Te 3, have room temperature ZT of less than 1, whereas ZT exceeding 3 is required for a TEG to be economically viable. With the thermoelectric efficiency typically within a few percent range and a low efficiency-to-cost ratio of TEGs, there has been a resurgence in the search for new class of thermo-electric materials for developing high efficiency thermo-to-electric energy conversion systems, with phonon-glass electron-crystal materials holding the most promise. Herein, we focus on synthesis, characterization and investigation of electrical, thermo-electrical and thermal characteristics of crystalline Cd 3As2, a high performance 3D topological Dirac semimetal with Dirac fermions dispersing linearly in k3-space and possessing one of the largest electron mobilities known for crystalline materials, i.e. 104-105cm2V-1 s-1. Suppression of carrier backscattering, ultra-high charge carrier mobility, and inherently low thermal conductivity make this semimetal a key candidate for demonstrating high, device-favorable S and in turn ZT. In this work, a low-temperature vapor-based crystallization pathway was developed and optimized to produce free standing 2D cm-size crystals in Cd 3As2. Compared to the bulk crystals produced in previous studies, e.g. Piper-Polich, Bridgman, or flux method, Cd3As 2 samples were synthesized over a considerably shorter time ( only a few hours), were single crystals and highly stochiometric. A high thermopower of up to 613 microV K-1 and the electrical conductivity of 105 S/m were registered within the temperature range of 300-400 K. A 1o-method based on the transfer function was applied to probe a thermal conductivity, k of Cd3As2 platelets. The results yield k of 2.4 W/m.K in the confirmation that the thermal conductivity of Cd3As2 crystals is to approach the amorphous limit at the room temperature. With its peak thermopower attained at the low temperature range of 300-400 K, high electrical conductivity and amorphous limit thermal conductivity, crystalline Cd3As2 grown via a low-T vapor based method demonstrates ZT > 3; the results confirm that as-produced Cd 3As2 platelets hold a high promise and is another phonon-glass electron-crystal TE material for the development of next generation, high efficiency thermo-electric generators and refrigerators operating under normal conditions.

Concurrent ionic migration and electronic effects at the memristive TiO x /La1/3Ca2/3MnO3-x interface

NASA Astrophysics Data System (ADS)

Román Acevedo, W.; Ferreyra, C.; Sánchez, M. J.; Acha, C.; Gay, R.; Rubi, D.

2018-03-01

The development of reliable redox-based resistive random-access memory devices requires understanding and disentangling concurrent effects present at memristive interfaces. We report on the fabrication and electrical characterization of TiO x /La1/3Ca2/3MnO3-x microstructured interfaces and on the modeling of their memristive behavior. We show that a careful tuning of the applied external electrical stimuli allows controlling the redox process between both layers, obtaining multilevel non-volatile resistance states. We simulate the oxygen vacancies dynamics at the interface between both oxides, and successfully reproduce the experimental electrical behavior after the inclusion of an electronic effect, related to the presence of an n-p diode at the interface. The formation of the diode is due to the n- and p-character of TiO x and La1/3Ca2/3MnO3-x , respectively. Our analysis indicates that oxygen vacancies migration between both layers is triggered after the diode is polarized either in forward mode or in reverse mode above breakdown. Electrical measurements at different temperatures suggest that the diode can be characterized as Zener-type. The advantages of our junctions for their implementation in RRAM devices are finally discussed.

Optical and electrical characterizations of multifunctional silver phosphate glass and polymer-based optical fibers.

PubMed

Rioux, Maxime; Ledemi, Yannick; Morency, Steeve; de Lima Filho, Elton Soares; Messaddeq, Younès

2017-03-03

In recent years, the fabrication of multifunctional fibers has expanded for multiple applications that require the transmission of both light and electricity. Fibers featuring these two properties are usually composed either of a single material that supports the different characteristics or of a combination of different materials. In this work, we fabricated (i) novel single-core step-index optical fibers made of electrically conductive AgI-AgPO 3 -WO 3 glass and (ii) novel multimaterial fibers with different designs made of AgI-AgPO 3 -WO 3 glass and optically transparent polycarbonate and poly (methyl methacrylate) polymers. The multifunctional fibers produced show light transmission over a wide range of wavelengths from 500 to 1000 nm for the single-core fibers and from 400 to 1000 nm for the multimaterial fibers. Furthermore, these fibers showed excellent electrical conductivity with values ranging between 10 -3 and 10 -1  S·cm -1 at room temperature within the range of AC frequencies from 1 Hz to 1 MHz. Multimodal taper-tipped fibre microprobes were then fabricated and were characterized. This advanced design could provide promising tools for in vivo electrophysiological experiments that require light delivery through an optical core in addition to neuronal activity recording.

Optical and electrical characterizations of multifunctional silver phosphate glass and polymer-based optical fibers

PubMed Central

Rioux, Maxime; Ledemi, Yannick; Morency, Steeve; de Lima Filho, Elton Soares; Messaddeq, Younès

2017-01-01

In recent years, the fabrication of multifunctional fibers has expanded for multiple applications that require the transmission of both light and electricity. Fibers featuring these two properties are usually composed either of a single material that supports the different characteristics or of a combination of different materials. In this work, we fabricated (i) novel single-core step-index optical fibers made of electrically conductive AgI-AgPO3-WO3 glass and (ii) novel multimaterial fibers with different designs made of AgI-AgPO3-WO3 glass and optically transparent polycarbonate and poly (methyl methacrylate) polymers. The multifunctional fibers produced show light transmission over a wide range of wavelengths from 500 to 1000 nm for the single-core fibers and from 400 to 1000 nm for the multimaterial fibers. Furthermore, these fibers showed excellent electrical conductivity with values ranging between 10−3 and 10−1 S·cm−1 at room temperature within the range of AC frequencies from 1 Hz to 1 MHz. Multimodal taper-tipped fibre microprobes were then fabricated and were characterized. This advanced design could provide promising tools for in vivo electrophysiological experiments that require light delivery through an optical core in addition to neuronal activity recording. PMID:28256608

Impact of electric field from a plasma jet on biological targets

NASA Astrophysics Data System (ADS)

Douat, Claire; Darny, Thibault; Iseni, Sylvain; Damany, Xavier; Dozias, Sebastien; Pouvesle, Jean-Michel; Robert, Eric; Vijayarangan, Vinodini; Delalande, Anthony; Pichon, Chantal

2016-09-01

Atmospheric pressure plasma jets have demonstrated their ability in biomedical applications thanks to their low gas temperature and their capacity to produce radicals, ions, electrons, UV radiation and electric fields. However the understanding of the interactions between the plasma and living cells and tissues is still far from being completely understood. Recently, Robert et al characterized two components of the electric field from a plasma jet and showed that the latter can propagate deeply in tissues on several mm. In this work, we focus on the study of the electric field induced by the plasma and its influence on the cell membrane. Propidium iodide, dextran sulfate and plasmid DNA are used to measure the permeability of the membrane, while an electro-optic probe is used to measure the longitudinal and the radial components of the electric field. The two components are both spatially and temporally resolved. To investigate the contribution of the electric field on the cell membrane, a dielectric barrier is used between the plasma and the biological target. A comparison with and without the barrier will be presented for both biological and agriculture applications.

Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

NASA Astrophysics Data System (ADS)

Fan, Wei

To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers, compared with pure TiO2. A modified 3-element model was adopted to extract the true C-V behavior of the TiAlOx-based MOS capacitor. Extremely small equivalent oxide thickness (EOT) less than 0.5 nm with dielectric leakage 4˜5 magnitude lower than that for SiO2 has been achieved on TiAlOx layer as a result of its excellent dielectric properties.

Low-Temperature Power Electronics Program

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Dickman, John E.; Hammoud, Ahmad; Gerber, Scott

1997-01-01

Many space and some terrestrial applications would benefit from the availability of low-temperature electronics. Exploration missions to the outer planets, Earth-orbiting and deep-space probes, and communications satellites are examples of space applications which operate in low-temperature environments. Space probes deployed near Pluto must operate in temperatures as low as -229 C. Figure 1 depicts the average temperature of a space probe warmed by the sun for various locations throughout the solar system. Terrestrial applications where components and systems must operate in low-temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation system, and arctic exploration. The development of electrical power systems capable of extremely low-temperature operation represents a key element of some advanced space power systems. The Low-Temperature Power Electronics Program at NASA Lewis Research Center focuses on the design, fabrication, and characterization of low-temperature power systems and the development of supporting technologies for low-temperature operations such as dielectric and insulating materials, power components, optoelectronic components, and packaging and integration of devices, components, and systems.

Synthesis and Characterization of Highly Crystalline Graphene Aerogels

DOE PAGES

Worsley, Marcus A.; Pham, Thang T.; Yan, Aiming; ...

2014-10-06

Aerogels are used in a broad range of scientific and industrial applications due to their large surface areas, ultrafine pore sizes, and extremely low densities. Recently, a large number of reports have described graphene aerogels based on the reduction of graphene oxide (GO). Though these GO-based aerogels represent a considerable advance relative to traditional carbon aerogels, they remain significantly inferior to individual graphene sheets due to their poor crystallinity. Here, we report a straightforward method to synthesize highly crystalline GO-based graphene aerogels via high-temperature processing common in commercial graphite production. The crystallization of the graphene aerogels versus annealing temperature ismore » characterized using Raman and X-ray absorption spectroscopy, X-ray diffraction, and electron microscopy. Nitrogen porosimetry shows that the highly crystalline graphene macrostructure maintains a high surface area and ultrafine pore size. Because of their enhanced crystallinity, these graphene aerogels exhibit a ~200 °C improvement in oxidation temperature and an order of magnitude increase in electrical conductivity.« less

Superconducting Ti/TiN Thin Films for mm-Wave Absorption

NASA Astrophysics Data System (ADS)

Aliane, A.; Solana, M.; Rabaud, W.; Saminadayar, L.; Agnese, P.; Goudon, V.; Dussopt, L.; Vialle, C.; Baghe, E.; Pocas, S.; Carle, L.; Lio Soon Shun, N.; Becker, S.; Reveret, V.; Rodriguez, L.; Hamelin, A.; Poglitsch, A.; Bounissou, S.; Adami, O.

2018-04-01

Polarization-sensitive detectors at 120-500 GHz are required for the observation of the cosmic microwave background radiation. In this paper, superconducting thin films based on Ti/TiN bilayers are developed to be integrated as electromagnetic wave absorbers in suspended cooled silicon bolometers. The critical temperature (T c) is tuned in the range of 600-800 mK through the superconductivity proximity effect between Ti and TiN to optimize the absorption of the incident power while minimizing the heat capacity of the system at low temperature. Ti/TiN bilayer samples are fabricated on silicon with two different thicknesses (100/5 and 300/5 nm). Electrical characterizations at low temperature have been performed and revealed the effect of thermal annealing (20-250 °C) on residual stress, T c, critical magnetic field (H c) and resistance above T c. A physical characterization by X-ray photoelectron spectroscopy provides evidences of oxidized states which may explain these effects.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oruc, Feyza B.; Aygun, Levent E.; Donmez, Inci

ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250 °C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80 °C; I{sub on}/I{sub off} ratio is extracted as 7.8 × 10{sup 9} and subthreshold slope is extracted as 0.116 V/dec.more » Flexible ZnO TFT devices are also fabricated using films grown at 80 °C. I{sub D}–V{sub GS} characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias.« less

Electrical characterization of MIM capacitor comprises an adamantane film at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiwari, Rajanish N., E-mail: rajanisht@gmail.com; Toyota Technological Institute, 2-12-1Hisakata, Tempaku-Ku, Nagoya 468-8511; Yoshimura, Masamichi

2016-06-15

We fabricated a new metal-insulator-metal capacitor at room temperature, comprising a ∼90 nm thin low–k adamantane film on a Si substrate. The surface morphology of deposited organic film was investigated by using scanning electron microscopy and Raman spectroscopy, which is confirmed that the adamantane thin film was uniformly distributed on the Si surface. The adamantane film exhibits a low leakage current density of 7.4 x 10{sup −7} A/cm{sup 2} at 13.5 V, better capacitance density of 2.14 fF/μm{sup 2} at 100 KHz.

Electrical Characterization of Microprocessor Memories.

DTIC Science & Technology

1981-06-01

INPUT PULSE 0 TO 3.0 20 T--- MEAN VALUE T AA (30) 3,Y VALUE t:_______ -50 -50 0 25 50 70 75 100 125 CASE TEMPERATURE (O)VENDOR SPEC LIMIT 45 NSEC 40 ...PULSE 0 TO 3.0 T AA MEAN VALUE T AA (3a) = 3a VALUEm ’t -.55 - 40 -25 -10 0 20 35 50 65 80 75 110 125 -CASE TEMPERATURE IN 0 aC Figure 2-2. Address Access...times for 2147H-1 and 2147H-2 were increased 5 nanosec- onds each to 40 and 50 nanoseconds, respectively. For the 2148, the access times were increased

Deposition and characterization of aluminum magnesium boride thin film coatings

NASA Astrophysics Data System (ADS)

Tian, Yun

Boron-rich borides are a special group of materials possessing complex structures typically comprised of B12 icosahedra. All of the boron-rich borides sharing this common structural unit exhibit a variety of exceptional physical and electrical properties. In this work, a new ternary boride compound AlMgB14, which has been extensively studied in bulk form due to its novel mechanical properties, was fabricated into thin film coatings by pulsed laser deposition (PLD) technology. The effect of processing conditions (laser operating modes, vacuum level, substrate temperature, and postannealing, etc.) on the composition, microstructure evolution, chemical bonding, and surface morphology of AlMgB14 thin film coatings has been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectrometry; the mechanical, electrical, and optical properties of AlMgB14 thin films have been characterized by nanoindentation, four-point probe, van der Pauw Hall measurement, activation energy measurement, and UV-VIS-NIR spectrophotometer. Experimental results show that AlMgB14 films deposited in the temperature range of 300 K - 873 K are amorphous. Depositions under a low vacuum level (5 x 10-5 Torr) can introduce a significant amount of C and O impurities into AlMgB14 films and lead to a complex oxide glass structure. Orthorhombic AlMgB14 phase cannot be obtained by subsequent high temperature annealing. By contrast, the orthorhombic AlMgB 14 crystal structure can be attained via high temperature-annealing of AlMgB14 films deposited under a high vacuum level (< 3 x 10-6 Torr), accompanied by strong texture formation. Low vacuum level-as deposited AlMgB14 films have low hardness (10 GPa), but high vacuum level-as deposited AlMgB14 films exhibit an extremely high hardness (45 GPa - 51 GPa), and the higher deposition temperature results in still higher hardness. Furthermore, a very low friction coefficient (0.04 - 0.05) has been observed for high vacuum level-as deposited AlMgB14 films, which could be ascribed to the in situ formation of a surface self-lubricating layer. Unlike most boron-rich boride films, high vacuum level-as deposited AlMgB14 films also possess a low n-type electrical resistivity, which is a consequence of high carrier concentration and moderate carrier mobility. The operative electrical transport mechanism and doping behavior for high vacuum level-as deposited AlMgB14 films are discussed in detail in this thesis.

Silicon carbide semiconductor device fabrication and characterization

NASA Technical Reports Server (NTRS)

Davis, R. F.; Das, K.

1990-01-01

A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.

New Ultrasonic Controller and Characterization System for Low Temperature Drying Process Intensification

NASA Astrophysics Data System (ADS)

Andrés, R. R.; Blanco, A.; Acosta, V. M.; Riera, E.; Martínez, I.; Pinto, A.

Process intensification constitutes a high interesting and promising industrial area. It aims to modify conventional processes or develop new technologies in order to reduce energy needs, increase yields and improve product quality. It has been demonstrated by this research group (CSIC) that power ultrasound have a great potential in food drying processes. The effects associated with the application of power ultrasound can enhance heat and mass transfer and may constitute a way for process intensification. The objective of this work has been the design and development of a new ultrasonic system for the power characterization of piezoelectric plate-transducers, as excitation, monitoring, analysis, control and characterization of their nonlinear response. For this purpose, the system proposes a new, efficient and economic approach that separates the effect of different parameters of the process like excitation, medium and transducer parameters and variables (voltage, current, frequency, impedance, vibration velocity, acoustic pressure and temperature) by observing the electrical, mechanical, acoustical and thermal behavior, and controlling the vibrational state.

Atmospheric turbulence chamber for optical transmission experiment Characterization by thermal method

NASA Technical Reports Server (NTRS)

Gamo, H.; Majumdar, A. K.

1978-01-01

Consideration is given to an atmospheric turbulence chamber designed for optical wave propagation experiments. The chamber consists of ten small electric heater/blowers with an aluminum foil screen and three screens of 2-mm aluminum wire meshes. Calculations are made of the temperature structure constant squared on the basis of temperature structure function measurements derived from a differential microthermocouple system. Values are presented for the refractive-index structure constant squared. The average wind velocity and temperature are found to be, respectively, 0.41 m/sec and 53 C. The inner and outer scales of turbulence are 5.0 mm and 6.5 cm. It is shown that the measured temperature structure function and the power spectrum of temperature fluctuations satisfy, respectively, the 2/3 and -5/3 power similarity laws in the inertial subrange. Possible chamber improvements are discussed.

Quantitative characterization of the viscosity of a microemulsion

NASA Technical Reports Server (NTRS)

Berg, Robert F.; Moldover, Michael R.; Huang, John S.

1987-01-01

The viscosity of the three-component microemulsion water/decane/AOT has been measured as a function of temperature and droplet volume fraction. At temperatures well below the phase-separation temperature the viscosity is described by treating the droplets as hard spheres suspended in decane. Upon approaching the two-phase region from low temperature, there is a large (as much as a factor of four) smooth increase of the viscosity which may be related to the percolation-like transition observed in the electrical conductivity. This increase in viscosity is not completely consistent with either a naive electroviscous model or a simple clustering model. The divergence of the viscosity near the critical point (39 C) is superimposed upon the smooth increase. The magnitude and temperature dependence of the critical divergence are similar to that seen near the critical points of binary liquid mixtures.

Magnetization and transport properties of single RPd2P2 (R=Y, La-Nd, Sm-Ho, Yb)

NASA Astrophysics Data System (ADS)

Drachuck, Gil; Boehmer, Anna; Bud'Ko, Sergey L.; Canfield, Paul

Single crystals of RPd2P2 (R=Y, La-Nd, Sm-Ho, Yb) were grown using a self-flux method and were characterized by room-temperature powder X-ray diffraction, anisotropic temperature and field dependent magnetization and temperature dependent in-plane resistivity. Anisotropic magnetic properties, arising mostly from crystal electric field (CEF) effects, were observed for most magnetic rare earths. The experimentally estimated CEF parameters B02 were calculated from the anisotropic paramagnetic θab and θcvalues. Ordering temperatures, as well as the polycrystalline averaged paramagnetic Curie-Weiss temperature, θave, were extracted from magnetization and resistivity measurements. Work done at Ames Laboratory was supported by US Department of Energy, Basic Energy Sciences, Division of Materials Sciences and Engineering under Contract No. DE-AC02-07CH111358.

Synthesis and characterization of high-T(sub c) screen-printed Y-Ba-Cu-O films on alumina

NASA Technical Reports Server (NTRS)

Bansal, Narottam P.; Simons, Rainee N.; Farrell, D. E.

1988-01-01

Thick films of YBa2Cu3O(sub 7-x) have been deposited on highly polished alumina substrates by the screen printing technique. To optimize the post-printing heat treatment, the films were baked at various temperatures for different lengths of time and oxygen-annealed at a lower temperature. The resulting films were characterized by electrical resistivity measurements, x-ray diffraction, and optical and scanning electron microscopy. Properties of the films were found to be highly sensitive to the post-printing thermal treatment. Films baked for 15 min at 1000 C in oxygen were hard, adherent, near single phase, and superconducting with T(sub c)(onset) approx 96 K, T(sub c)(zero) approx 66 K and Delta T sub c (10 to 90 percent) approx 10 K.

Multifunctional green nanostructured composites: preparation and characterization

NASA Astrophysics Data System (ADS)

Stieven Montagna, Larissa; Sizuka Oishi, Silvia; Faria Diniz, Milton; Larissa do Amaral Montanheiro, Thaís; Santos da Silva, Fábio; Passador, Fábio Roberto; Cerqueira Rezende, Mirabel

2018-05-01

The present research had as main purpose to develop and characterize multifunctional green nanocomposites based on poly(furfuryl alcohol) resin (PFA bioresin), derived from sugarcane bagasse reinforced with different contents of graphite nanosheets (GNS) (0.5, 1.0, 1.5 and 2.0 wt%) which were dispersed in PFA bioresin using an ultrasonic processor. The mixture was poured into silicone molds and cured at room temperature during 24 h followed by a post-cure at preheated oven in cycles of different temperatures. TEM analysis of GNS showed this filler consist of ultrathin and layered sheets. SEM micrographs of the cryogenic fracture of the nanocomposite presented the good interfacial adhesion between PFA bioresin and GNS. Moreover, upon GNS addition in the PFA bioresin, PFA/GNS nanocomposites demonstrated superior mechanical performance and better electrical conductivity than neat PFA bioresin.

Recent advances in the characterization of high temperature industrial materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meadowcroft, D.B.; Tomkings, A.B.

1995-12-31

This paper reviews several techniques under development or recently commercialized which aid the characterization of high temperature plant components when carrying out lifetime predictions. Temperature measurements are frequently limited because of the limited lifetime and cost of thermocouples in aggressive environments and three alternative methods of assessing the ``average effective`` temperature of a component being evaluated by the authors are described steam side oxide thickness (specifically for ferritic superheater tubes), copper gold diffusion couples (``PETIT``), and the measurement of ferrite in duplex steels (``FEROPLUG``). Advances are described which have been made recently in the measurement techniques available for making plantmore » measurements on components to reduce the time needed for significant values of wastage rates to be established. In addition on-line high, temperature corrosion monitors are coming available which allow wastage rates to be assessed over periods of hours or days. These involve electrical resistance or electrochemical techniques. Finally the use of thin layer activation by a radioactive isotope is highlighted which enables the wastage of components to be assessed remotely without direct contact. Whilst available for a long time for laboratory and pilot plant studies, the authors are actively concerned with introducing the technique into operational boiler plant.« less

Ash reduction system using electrically heated particulate matter filter

DOEpatents

Gonze, Eugene V [Pinckney, MI; Paratore, Jr., Michael J; He, Yongsheng [Sterling Heights, MI

2011-08-16

A control system for reducing ash comprises a temperature estimator module that estimates a temperature of an electrically heated particulate matter (PM) filter. A temperature and position estimator module estimates a position and temperature of an oxidation wave within the electrically heated PM filter. An ash reduction control module adjusts at least one of exhaust flow, fuel and oxygen levels in the electrically heated PM filter to adjust a position of the oxidation wave within the electrically heated PM filter based on the oxidation wave temperature and position.

Development of new materials from waste electrical and electronic equipment: Characterization and catalytic application.

PubMed

Souza, J P; Freitas, P E; Almeida, L D; Rosmaninho, M G

2017-07-01

Wastes of electrical and electronic equipment (WEEE) represent an important environmental problem, since its composition includes heavy metals and organic compounds used as flame-retardants. Thermal treatments have been considered efficient processes on removal of these compounds, producing carbonaceous structures, which, together with the ceramic components of the WEEE (i.e. silica and alumina), works as support material for the metals. This mixture, associated with the metals present in WEEE, represents promising systems with potential for catalytic application. In this work, WEEE was thermally modified to generate materials that were extensively characterized. Raman spectrum for WEEE after thermal treatment showed two carbon associated bands. SEM images showed a metal nanoparticles distribution over a polymeric and ceramic support. After characterization, WEEE materials were applied in ethanol steam reforming reaction. The system obtained at higher temperature (800°C) exhibited the best activity, since it leads to high conversions (85%), hydrogen yield (30%) and H 2 /CO ratio (3,6) at 750°C. Copyright © 2017 Elsevier Ltd. All rights reserved.

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Huarui, E-mail: huarui.sun@bristol.ac.uk; Bajo, Miguel Montes; Uren, Michael J.

2015-01-26

Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage “hot spots” at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7–0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which ismore » consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites.« less

Thermoelectrically cooled temperature-gradient apparatus for comparative cell and virus temperature studies.

PubMed

Clark, H F; Kaminski, F; Karzon, D T

1970-05-01

Establishment of a near-linear temperature gradient in an incubator has been accomplished by the application of heat to one terminus of a conducting body, normally a metal bar, and the removal of heat from the other terminus of the conducting body. Such incubators have been complex and unwieldy because of the need for mechanical refrigeration. We have described a simplified temperature gradient incubator which uses thermoelectric module cooling coupled with electric heating. Along the gradient, 20 stations in two parallel rows of 10, each accommodating a 30-ml plastic cell culture flask, were continually monitored by an electronic thermometer, and the temperatures were recorded. By manipulation of two simple potentiometer controls, any temperature gradient between 0 and 50 C could be obtained. Minor deviations which occurred between theoretically perfect and obtained temperature gradients were reproducible and readily measured. The gradient incubator was particularly applicable to (i) simultaneously studying a given biological activity over the entire temperature range supporting the growth of a given cell, virus, or microorganism, or (ii) precisely defining the upper or lower temperature limits of a biological system by 10-point determinations. Preliminary experiments have demonstrated the usefulness of the apparatus in characterizing the temperature limits for growth in vitro of cells of reptilian cell lines. The gradient incubator was also successfully utilized for the characterization of the effect of temperature on the efficiency of plating of amphibian viruses and possible temperature variants of those viruses.

Electrical characterization of 6H crystalline silicon carbide. M.S. Thesis Final Report

NASA Technical Reports Server (NTRS)

Lempner, Stephen E.

1994-01-01

Crystalline silicon carbide (SiC) substrates and epilayers, undoped as well as n- and p-doped, have been electrically characterized by performing Hall effect and resistivity measurements (van der Pauw) over the temperature range of approximately 85 K to 650 K (200 K to 500 K for p-type sample). By fitting the measured temperature dependent carrier concentration data to the single activation energy theoretical model: (1) the activation energy for the nitrogen donor ranged from 0.078 eV to 0.101 eV for a doping concentration range of 10(exp 17) cm(exp -3) to 10(exp 18) cm(exp -3) and (2) the activation energy for the aluminum acceptor was 0.252 eV for a doping concentration of 4.6 x 10(exp 18) cm(exp -3). By fitting the measured temperature dependent carrier concentration data to the double activation energy level theoretical model for the nitrogen donor: (1) the activation energy for the hexagonal site was 0.056 eV and 0.093 eV corresponding to doping concentrations of 3.33 x 10 (exp 17) cm(exp -3) and 1.6 x 10(exp 18) cm(exp -3) and (2) the activation energy for the cubic site was 0.113 and 0.126 eV corresponding to doping concentrations of 4.2 x 10(exp 17) cm(exp -3) and 5.4 x 10(exp 18) cm(exp -3).

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Larkin, David J.; Starr, Jonathan E.; Powell, J. Anthony; Salupo, Carl S.; Matus, Lawrence G.

1994-01-01

3C-SiC (beta-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (less than 0.5 deg off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 micron diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

Growth and characterization of Hg(1-x)Zn(x)Se

NASA Technical Reports Server (NTRS)

Andrews, R. N.

1986-01-01

Hg sub 1-xZn sub xSe alloys of composition x=0.10 were grown in a Bridgman-Stockbarger growth furnace at translation rates of 0.3 and 0.1 micron sec. The axial and radial composition profiles were determined using precision density measurements and IR transmission-edge-mapping, respectively. A more radially homogeneous alloy was produced at the slower growth rate, while the faster growth rate produced more axially homogeneous alloys. A determination of the electrical properties of the Hg sub 1-xZn sub xSe samples in the temperature range 300K-20K was also made. Typical carrier concentrations were on the order of magnitude of 10 to the 18th power cu/cm, and remained fairly constant as a function of temperature. A study was also made of the temperature dependence of the resistivity and Hall mobility. The effect of annealing in a selenium vapor on both the IR transmission and the electrical properties was determined. Annealing was effective in reducing the number of native donor defects and at the resulting lower carrier concentrations, charge carrier concentration was shown to be a function of temperature. Annealing caused the mobility to increase, primarily at the lower temperature, and the room temperature resistivity to increase. Annealing was also observed to greatly enhance the % IR transmittance of the samples. This was due primarily to the effect of annealing on decreasing the charge carrier concentration.

Crystal growth and magneto-transport behavior of PdS1-δ

NASA Astrophysics Data System (ADS)

Cao, Lin; Lv, Yang-Yang; Chen, Si-Si; Li, Xiao; Zhou, Jian; Yao, Shu-Hua; Chen, Y. B.; Lu, Minghui; Chen, Yan-Feng

2018-04-01

PdS is theoretically proposed to novel topological material with eight-band fermions. Here, PdS1-δ crystals were successfully grown from KI as solvent by modified flux method. The single crystalline quality and compositional homogeneity of grown PdS1-δ are characterized by X-ray diffraction and energy dispersion spectroscopy. Temperature dependent electrical transport property of PdS1-δ demonstrates a semiconductor-like behavior. Analysis of temperature-dependent resistance indicates that there is variable-range-hopping behavior at low temperature. The clear negative MR of PdS1-δ single crystals is measured at the low temperature (<30 K), which may be ascribed to the interaction between conducting carriers and localized moments. however, the magneto-transport results have not shown the clues of topological feature of PdS.

Groundwater temperature estimation and modeling using hydrogeophysics.

NASA Astrophysics Data System (ADS)

Nguyen, F.; Lesparre, N.; Hermans, T.; Dassargues, A.; Klepikova, M.; Kemna, A.; Caers, J.

2017-12-01

Groundwater temperature may be of use as a state variable proxy for aquifer heat storage, highlighting preferential flow paths, or contaminant remediation monitoring. However, its estimation often relies on scarce temperature data collected in boreholes. Hydrogeophysical methods such as electrical resistivity tomography (ERT) and distributed temperature sensing (DTS) may provide more exhaustive spatial information of the bulk properties of interest than samples from boreholes. If a properly calibrated DTS reading provides direct measurements of the groundwater temperature in the well, ERT requires one to determine the fractional change per degree Celsius. One advantage of this petrophysical relationship is its relative simplicity: the fractional change is often found to be around 0.02 per degree Celcius, and represents mainly the variation of electrical resistivity due to the viscosity effect. However, in presence of chemical and kinetics effects, the variation may also depend on the duration of the test and may neglect reactions occurring between the pore water and the solid matrix. Such effects are not expected to be important for low temperature systems (<30 °C), at least for short experiments. In this contribution, we use different field experiments under natural and forced flow conditions to review developments for the joint use of DTS and ERT to map and monitor the temperature distribution within aquifers, to characterize aquifers in terms of heterogeneity and to better understand processes. We show how temperature time-series measurements might be used to constraint the ERT inverse problem in space and time and how combined ERT-derived and DTS estimation of temperature may be used together with hydrogeological modeling to provide predictions of the groundwater temperature field.

Characterization factors for thermal pollution in freshwater aquatic environments.

PubMed

Verones, Francesca; Hanafiah, Marlia Mohd; Pfister, Stephan; Huijbregts, Mark A J; Pelletier, Gregory J; Koehler, Annette

2010-12-15

To date the impact of thermal emissions has not been addressed in life cycle assessment despite the narrow thermal tolerance of most aquatic species. A method to derive characterization factors for the impact of cooling water discharges on aquatic ecosystems was developed which uses space and time explicit integration of fate and effects of water temperature changes. The fate factor is calculated with a 1-dimensional steady-state model and reflects the residence time of heat emissions in the river. The effect factor specifies the loss of species diversity per unit of temperature increase and is based on a species sensitivity distribution of temperature tolerance intervals for various aquatic species. As an example, time explicit characterization factors were calculated for the cooling water discharge of a nuclear power plant in Switzerland, quantifying the impact on aquatic ecosystems of the rivers Aare and Rhine. The relative importance of the impact of these cooling water discharges was compared with other impacts in life cycle assessment. We found that thermal emissions are relevant for aquatic ecosystems compared to other stressors, such as chemicals and nutrients. For the case of nuclear electricity investigated, thermal emissions contribute between 3% and over 90% to Ecosystem Quality damage.

Ultrasonic Characterization of Superhard Material: Osmium Diboride

NASA Astrophysics Data System (ADS)

Yadawa, P. K.

2012-12-01

Higher order elastic constants have been calculated in hexagonal structured superhard material OsB2 at room temperature following the interaction potential model. The temperature variation of the ultrasonic velocities is evaluated along different angles with unique axis of the crystal using the second order elastic constants. The ultrasonic velocity decreases with the temperature along particular orientation with the unique axis. Temperature variation of the thermal relaxation time and Debye average velocities are also calculated along the same orientation. The temperature dependency of the ultrasonic properties is discussed in correlation with elastic, thermal and electrical properties. It has been found that the thermal conductivity is the main contributor to the behaviour of ultrasonic attenuation as a function of temperature and the responsible cause of attenuation is phonon-phonon interaction. The mechanical properties of OsB2 at low temperature are better than at high temperature, because at low temperature it has low ultrasonic velocity and ultrasonic attenuation. Superhard material OsB2 has many industrial applications, such as abrasives, cutting tools and hard coatings.

Optical and Electrical Characterization of Bulk Grown Indium-Gallium-Arsenide Alloys

DTIC Science & Technology

2010-03-01

OPTICAL AND ELECTRICAL CHARACTERIZATION OF BULK GROWN INDIUM- GALLIUM -ARSENIDE ALLOYS THESIS...Government. AFIT/GAP/ENP/10-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF BULK GROWN INDIUM- GALLIUM -ARSENIDE ALLOYS THESIS Presented to...ELECTRICAL CHARACTERIZATION OF BULK GROWN INDIUM- GALLIUM -ARSENIDE ALLOYS Austin C Bergstrom, BS 2 nd Lieutenant, USAF

Electron microscopy analyses and electrical properties of the layered Bi{sub 2}WO{sub 6} phase

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taoufyq, A.; Laboratoire Matériaux et Environnement LME, Faculté des Sciences, Université Ibn Zohr, BP 8106, Cité Dakhla, Agadir, Maroc; Département d‘Études des Réacteurs, Laboratoire Dosimétrie Capteurs Instrumentation, CEA Cadarache

2013-07-15

The bismuth tungstate Bi{sub 2}WO{sub 6} was synthesized using a classical coprecipitation method followed by a calcination process at different temperatures. The samples were characterized by X-ray diffraction, simultaneous thermogravimetry and differential thermal analysis (TGA/DTA), scanning and transmission electron microscopy (SEM, TEM) analyses. The Rietveld analysis and electron diffraction clearly confirmed the Pca2{sub 1} non centrosymmetric space group previously proposed for this phase. The layers Bi{sub 2}O{sub 2}{sup 2+} and WO{sub 4}{sup 2−} have been directly evidenced from the HRTEM images. The electrical properties of Bi{sub 2}WO{sub 6} compacted pellets systems were determined from electrical impedance spectrometry (EIS) and directmore » current (DC) analyses, under air and argon, between 350 and 700 °C. The direct current analyses showed that the conduction observed from EIS analyses was mainly ionic in this temperature range, with a small electronic contribution. Electrical change above the transition temperature of 660 °C is observed under air and argon atmospheres. The strong conductivity increase observed under argon is interpreted in terms of formation of additional oxygen vacancies coupled with electron conduction. - Graphical abstract: High resolution transmission electron microscopy: inverse fast Fourier transform giving the layered structure of the Bi{sub 2}WO{sub 6} phase, with a representation of the cell dimensions (b and c vectors). The Bi{sub 2}O{sub 2}{sup 2+} and WO{sub 4}{sup 2−} sandwiches are visible in the IFFT image. - Highlights: • Using transmission electron microscopy, we visualize the layered structure of Bi{sub 2}WO{sub 6}. • Electrical analyses under argon gas show some increase in conductivity. • The phase transition at 660 °C is evidenced from electrical modification.« less

Fabrication and Characterization of High Temperature Resin/Carbon Nanofiber Composites

NASA Technical Reports Server (NTRS)

Ghose, Sayata; Watson, Kent A.; Working, Dennis C.; Criss, Jim M.; Siochi, Emilie J.; Connell, John W.

2005-01-01

Multifunctional composites present a route to structural weight reduction. Nanoparticles such as carbon nanofibers (CNF) provide a compromise as a lower cost nanosize reinforcement that yields a desirable combination of properties. Blends of PETI-330 and CNFs were prepared and characterized to investigate the potential of CNF composites as a high performance structural medium. Dry mixing techniques were employed and the effect of CNF loading level on melt viscosity was determined. The resulting powders were characterized for degree of mixing, thermal and rheological properties. Based on the characterization results, samples containing 30 and 40 wt% CNF were scaled up to approx.300 g and used to fabricate moldings 10.2 cm x 15.2 cm x 0.32 cm thick. The moldings were fabricated by injecting the mixtures at 260-280 C into a stainless steel tool followed by curing for 1 h at 371 C. The tool was designed to impart high shear during the process in an attempt to achieve some alignment of CNFs in the flow direction. Moldings were obtained that were subsequently characterized for thermal, mechanical and electrical properties. The degree of dispersion and alignment of CNFs were investigated using high-resolution scanning electron microscopy. The preparation and preliminary characterization of PETI-330/CNF composites are discussed. Keywords: resins, carbon nanofibers, scanning electron microscopy, electrical properties, thermal conductivity,injection

Significant mobility improvement of amorphous In-Ga-Zn-O thin-film transistors annealed in a low temperature wet ambient environment

NASA Astrophysics Data System (ADS)

Jallorina, Michael Paul A.; Bermundo, Juan Paolo S.; Fujii, Mami N.; Ishikawa, Yasuaki; Uraoka, Yukiharu

2018-05-01

Transparent amorphous oxide semiconducting materials such as amorphous InGaZnO used in thin film transistors (TFTs) are typically annealed at temperatures higher than 250 °C to remove any defects present and improve the electrical characteristics of the device. Previous research has shown that low cost and low temperature methods improve the electrical characteristics of the TFT. With the aid of surface and bulk characterization techniques in comparison to the device characteristics, this work aims to elucidate further on the improvement mechanisms of wet and dry annealing ambients that affect the electrical characteristics of the device. Secondary Ion Mass Spectrometry results show that despite outward diffusion of -H and -OH species, humid annealing ambients counteract outward diffusion of these species, leading to defect sites which can be passivated by the wet ambient. X-ray Photoelectron Spectroscopy results show that for devices annealed for only 30 min in a wet annealing environment, the concentration of metal-oxide bonds increased by as much as 21.8% and defects such as oxygen vacancies were reduced by as much as 18.2% compared to an unannealed device. Our work shows that due to the oxidizing power of water vapor, defects are reduced, and overall electrical characteristics are improved as evidenced with the 150 °C wet O2, 30 min annealed sample which exhibited the highest mobility of 5.00 cm2/V s, compared to 2.36 cm2/V s for a sample that was annealed at 150 °C in a dry ambient atmospheric environment for 2 h.

Effect of temperature on the electric breakdown strength of dielectric elastomer

NASA Astrophysics Data System (ADS)

Liu, Lei; Chen, Hualing; Sheng, Junjie; Zhang, Junshi; Wang, Yongquan; Jia, Shuhai

2014-03-01

DE (dielectric elastomer) is one of the most promising artificial muscle materials for its large strain over 100% under driving voltage. However, to date, dielectric elastomer actuators (DEAs) are prone to failure due to the temperature-dependent electric breakdown. Previously studies had shown that the electrical breakdown strength was mainly related to the temperature-dependent elasticity modulus and the permittivity of dielectric substances. This paper investigated the influence of ambient temperature on the electric breakdown strength of DE membranes (VHB4910 3M). The electric breakdown experiment of the DE membrane was conducted at different ambient temperatures and pre-stretch levels. The real breakdown strength was obtained by measuring the deformation and the breakdown voltage simultaneously. Then, we found that with the increase of the environment temperature, the electric breakdown strength decreased obviously. Contrarily, the high pre-stretch level led to the large electric breakdown strength. What is more, we found that the deformations of DEs were strongly dependent on the ambient temperature.

Process dependent morphology of the Si/SiO2 interface measured with scanning tunneling microscopy

NASA Technical Reports Server (NTRS)

Hecht, Michael H.; Bell, L. D.; Grunthaner, F. J.; Kaiser, W. J.

1988-01-01

A new experimental technique to determine Si/SiO2 interface morphology is described. Thermal oxides of silicon are chemically removed, and the resulting surface topography is measured with scanning tunneling microscopy. Interfaces prepared by oxidation of Si (100) and (111) surfaces, followed by postoxidation anneal (POA) at different temperatures, have been characterized. Correlations between interface structure, chemistry, and electrical characteristics are described.

Working medium circuit for alkali metal thermal-to-electric converters (AMTEC)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalandarishvili, A.G.

1996-12-31

The possibility is studied to create a sodium circuit in an AMTEC type conversion device. The proposed circuit is based on a heat pipe that includes the evaporation-condensation cycle. Different layouts based on this principle are presented. The proposed circuit is characterized by the following advantages: no need for an electromagnetic pump, low load on the converter, better capability to control temperature drop at the converter.

Fabrication and characterization of diamond-like carbon/Ni bimorph normally closed microcages

NASA Astrophysics Data System (ADS)

Luo, J. K.; He, J. H.; Fu, Y. Q.; Flewitt, A. J.; Spearing, S. M.; Fleck, N. A.; Milne, W. I.

2005-08-01

Normally closed microcages based on highly compressively stressed diamond-like carbon (DLC) and electroplated Ni bimorph structures have been simulated, fabricated and characterized. Finite-element and analytical models were used to simulate the device performance. It was found that the radius of curvature of the bimorph layer can be adjusted by varying the DLC film stress, the total layer thickness and the thickness ratio of the DLC to Ni layers. The angular deflection of the bimorph structures can also be adjusted by varying the finger length. The radius of curvature of the microcage was in the range of 18-50 µm, suitable for capturing and confining micro-objects with sizes of 20-100 µm. The operation of this type of device is very efficient due to the large difference in thermal expansion coefficients of the DLC and the Ni layers. Electrical tests have shown that these microcages can be opened by ~90° utilizing a power smaller than 20 mW. The operating temperatures of the devices under various pulsed currents were extracted through the change in electrical resistance of the devices. The results showed that an average temperature in the range of 400-450 °C is needed to open this type of microcage by ~90°, consistent with the results from analytical simulation and finite-element modelling.

Synthesis, crystal structure and electrical properties of (C5H13NCl)2 SnCl6

NASA Astrophysics Data System (ADS)

Rgaieg, R.; Karoui, K.; Zouari, R.

2017-10-01

In this work, a novel compound Bis(2-chloropropyl-N,N-dimethyl-1-ammonium) hexachloridostannate(IV) was synthesized and characterized by; single X-ray diffraction, Hirshfeld surface analysis, differential scanning calorimetric and dielectric measurement. The crystal structure refinement at room temperature reveled that this later belongs to the monoclinic compound with P21/n space group with the following unit cell parameters a = 7.2894(7) Å, b = 12.9351(12) Å, c = 12.2302(13) Å and β = 93.423 (6) °. The structure consists of isolated (SnCl6)2- octahedral anions connected together into layers via hydrogen bonds N-H….Cl between the chlorine atoms of the anions and the hydrogen atoms of the NH groups of the [C5H13NCl]+ cations. Hirschfeld surface analysis has been performed to gain insight into the behavior of these interactions. The differential scanning calorimetry spectrum discloses phase transitions at 367 and 376.7 K. The electrical properties of this compound have been measured in the temperature range 300-420 K and the frequency range 209 Hz-5 MHz. The Cole-Cole (Z‧ versus Z″) plots are well fitted to an equivalent circuit model. The transition phase observed in the calorimetric study is confirmed by the change as function of temperature of electrical parameter such as the conductivity of grain (σg) and the σdc.

Dependence of Lunar Surface Charging on Solar Wind Plasma Conditions and Solar Irradiation

NASA Technical Reports Server (NTRS)

Stubbs, T. J.; Farrell, W. M.; Halekas, J. S.; Burchill, J. K.; Collier, M. R.; Zimmerman, M. I.; Vondrak, R. R.; Delory, G. T.; Pfaff, R. F.

2014-01-01

The surface of the Moon is electrically charged by exposure to solar radiation on its dayside, as well as by the continuous flux of charged particles from the various plasma environments that surround it. An electric potential develops between the lunar surface and ambient plasma, which manifests itself in a near-surface plasma sheath with a scale height of order the Debye length. This study investigates surface charging on the lunar dayside and near-terminator regions in the solar wind, for which the dominant current sources are usually from the pohotoemission of electrons, J(sub p), and the collection of plasma electrons J(sub e) and ions J(sub i). These currents are dependent on the following six parameters: plasma concentration n(sub 0), electron temperature T(sub e), ion temperature T(sub i), bulk flow velocity V, photoemission current at normal incidence J(sub P0), and photo electron temperature T(sub p). Using a numerical model, derived from a set of eleven basic assumptions, the influence of these six parameters on surface charging - characterized by the equilibrium surface potential, Debye length, and surface electric field - is investigated as a function of solar zenith angle. Overall, T(sub e) is the most important parameter, especially near the terminator, while J(sub P0) and T(sub p) dominate over most of the dayside.

Aerodynamic drag characterization and deposition studies of irregular particles. Part 3: Analysis of flow and temperature field inside the Combustion Deposition Entrained Reactor (CDER)

NASA Astrophysics Data System (ADS)

Celik, I.; Katragadda, S.; Nagarajan, R.

1990-01-01

An experimental and numerical analysis was performed of the temperature and flow field involved in co-axial, confined, non-reacting heated jets in a drop tube reactor. An electrically heated 2-inch (50.8 mm) diameter drop tube reactor was utilized to study the jet characteristics. Profiles of gas temperature, typically in the range of 800 to 1600 K were measured in the mixing zone of the jet with a K-Type thermocouple. Measured temperatures were corrected for conduction, convection, and radiation heat losses. Because of limited access to the mixing zone, characterization of the flow field at high temperatures with laser Doppler or hot wire anemometry were impractical. A computer program which solves the full equations of motion and energy was employed to simulate the temperature and flow fields. The location of the recirculation region, the flow regimes, and the mixing phenomena were studied. The wall heating, laminar and turbulent flow regimes were considered in the simulations. The predictions are in fairly good agreement with the corrected temperature measurements provided that the flow is turbulent. The results of this study demonstrate how a numerical method and measurement can be used together to analyze the flow conditions inside a reactor which has limited access because of very high temperatures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaur, Ramneek; Tripathi, S. K., E-mail: surya@pu.ac.in, E-mail: surya-tr@yahoo.com

This paper reports the synthesis and electrical characterization of CdSe-PMMA nanocomposite. CdSe-PMMA nanocomposite has been prepared by ex-situ technique through chemical route. The influence of three different Ag doping concentrations on the electrical properties has been studied in the temperature range ∼ 303-353 K. Transmission electron micrograph reveals the spherical morphology of the CdSe nanoparticles and their proper dispersion in the PMMA matrix. The electrical conduction of the polymer nanocomposites is through thermally activated process with single activation energy. With Ag doping, initially the activation energy increases upto 0.2 % Ag doping concentration but with further increase in Ag concentration, itmore » decreases. This behavior has been discussed on the basis of randomly oriented grain boundaries and defect states. Thus, the results indicate that the transport properties of the polymer nanocomposites can be tailored by controlled doping concentration.« less

Optical and electrical properties of bismuth-sulfide (Bi2S3) thin films prepared by thermal evaporation.

NASA Astrophysics Data System (ADS)

Mahmoud, Siham; Sharaf, Fouad

Thin films of Bi2S3, of thickness in the range 300 to 500 nm, were produced by thermal evaporation technique. The reaction consisted in depositing the two elements (bismuth and sulfur) from a boat source and allowing their atoms to interdiffuse to form the compound during the deposition on quartz substrates. The material has been characterized by X-ray studies, optical and electrical measurements. When these films were annealed at 353 K, 393 K and 453 K for 5 hours, a nearly amorphous to polycrystalline transition was observed. The absorption coefficient revealed the existence of an allowed direct transition with Eg = 1.56 eV. The activation energies for electrical conduction in low and high temperature regions are 0.28 eV and 0.73 eV, respectively.

Electrical switching in cadmium boracite single crystals

NASA Technical Reports Server (NTRS)

Takahashi, T.; Yamada, O.

1981-01-01

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs /GaAs single quantum well structures

NASA Astrophysics Data System (ADS)

Chen, T. H.; Huang, Y. S.; Lin, D. Y.; Tiong, K. K.

2004-12-01

Ga0.69In0.31NxAs1-x/GaAs single quantum well (SQW) structures with three different nitrogen compositions ( x =0%, 0.6%, and 0.9%) have been characterized, as functions of temperature in the range 10-300K, by the techniques of photoreflectance (PR) and photoluminescence (PL). In PR spectra, clear Franz-Keldysh oscillations (FKOs) above the GaAs band edge and the various excitonic transitions originating from the QW region have been observed. The built-in electric field in the SQW has been determined from FKOs and found to increase with N concentration. The PR signal has been found to decrease for nitrogen incorporated samples when the temperature was lowered due to a weakening of the modulation efficiency induced by carrier localization. A careful analysis of PR and PL spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The anomalous temperature dependent 11H transition energy and linewidth observed in the PL spectra have been explained as originating from the localized states as a result of nitrogen incorporation. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the interband transitions.

Thermal stress characterization using the electro-mechanical impedance method

NASA Astrophysics Data System (ADS)

Zhu, Xuan; Lanza di Scalea, Francesco; Fateh, Mahmood

2017-04-01

This study examines the potential of the Electro-Mechanical Impedance (EMI) method to provide an estimation of the developed thermal stress in constrained bar-like structures. This non-invasive method features the easiness of implementation and interpretation, while it is notoriously known for being vulnerable to environmental variability. A comprehensive analytical model is proposed to relate the measured electric admittance signatures of the PZT element to temperature and uniaxial stress applied to the underlying structure. The model results compare favorably to the experimental ones, where the sensitivities of features extracted from the admittance signatures to the varying stress levels and temperatures are determined. Two temperature compensation frameworks are proposed to characterize the thermal stress states: (a) a regression model is established based on temperature-only tests, and the residuals from the thermal stress tests are then used to isolate the stress measurand; (b) the temperature-only tests are decomposed by Principle Components Analysis (PCA) and the feature vectors of the thermal stress tests are reconstructed after removal of the temperaturesensitive components. For both methods, the features were selected based on their performance in Receiver Operating Characteristic (ROC) curves. Experimental results on the Continuous Welded Rails (CWR) are shown to demonstrate the effectiveness of these temperature compensation methods.

Makeup and uses of a basic magnet laboratory for characterizing high-temperature permanent magnets

NASA Technical Reports Server (NTRS)

Niedra, Janis M.; Schwarze, Gene E.

1991-01-01

A set of instrumentation for making basic magnetic measurements was assembled in order to characterize high intrinsic coercivity, rare earth permanent magnets with respect to short term demagnetization resistance and long term aging at temperatures up to 300 C. The major specialized components of this set consist of a 13 T peak field, capacitor discharge pulse magnetizer; a 10 in. pole size, variable gap electromagnet; a temperature controlled oven equipped with iron cobalt pole piece extensions and a removable paddle that carries the magnetization and field sensing coils; associated electronic integrators; and sensor standards for field intensity H and magnetic moment M calibration. A 1 cm cubic magnet sample, carried by the paddle, fits snugly between the pole piece extensions within the electrically heated aluminum oven, where fields up to 3.2 T can be applied by the electromagnet at temperatures up to 300 C. A sample set of demagnetization data for the high energy Sm2Co17 type of magnet is given for temperatures up to 300 C. These data are reduced to the temperature dependence of the M-H knee field and of the field for a given magnetic induction swing, and they are interpreted to show the limits of safe operation.

Oxidation of SiC

NASA Astrophysics Data System (ADS)

Cooper, James A.

1997-03-01

SiC is a wide band gap hexagonal anisotropic semiconductor which is attractive for use in high voltage, high temperature, or high power applications. SiC is also the only compound semiconductor that can be thermally oxidized to form SiO_2, making it possible to construct many conventional MOS devices in this material. The electrical quality of the SiO_2/SiC interface is far from ideal, however, and considerable research is presently directed to understanding and improving this interface. Electrical characterization of the SiC MOS interface is complicated by the wide band gap, since most interface states are energetically too far removed from the conduction or valence bands to respond to electrical stimulation at room temperature. Moreover, very little information is yet available on the properties of the MOS interface on the 4H polytype of SiC (preferred because of it's higher bulk electron mobility) or on interfaces on crystalline surfaces perpendicular to the basal plane (where an equal number of Si and C atoms are present). Finally, electron mobilities in inversion layers on 4H-SiC reported to date are anomolously low, especially in consideration of the relatively high bulk mobilities in this polytype. In this talk we will discuss MOS characterization techniques for wide band gap semiconductors and review the current understanding of the physics of the MOS interface on thermally oxidized SiC.

Monitoring electrical properties for improving the lithological and hydrological characterization of landslides

NASA Astrophysics Data System (ADS)

Malet, J. P.; Gance, J.; Lajaunie, M.; Gallistl, J.; Denchik, N.; Flores Orozco, A.; Ottowitz, D.; Supper, R.; Sailhac, P.; Gautier, S.; Schmutz, M.

2017-12-01

Imaging water flows in landslides is of critical importance as the distribution of pore-fluid pressures controls the dynamics (acceleration, deceleration) of the material. Detecting and imaging water is a difficult task, not only because of the complex topography and the small dimensions of the geological structures, but also because the landslide material consists of unsaturated porous and heterogeneous fractured media, leading to multi-scale water-flow properties. Further, these properties can change in time, in relation to temperature, rainfall and biological forcings. Electrical properties are relevant proxies of the sub-surface hydrological properties. In order to image water in landslide bodies, we propose to combine multi-frequency electrical and electromagnetic measurements using campaigns or permanent instruments, and surface/boreole investigations, installed on several unstable slopes in France. To evaluate the information gained from electrical properties for different geological conditions, we discuss electrical and electro-magnetic imaging results for data collected at four different landslides located in France (Super-Sauze and La Valette in the South East Alps, Lodève lin the southern border of the Massif Central Massif, and Séchilienne in the North French Alps). Time-lapse electrical DC resistivity observations, complex electrical conductivity (conduction and polarization/chargeability) measured by IP imaging methods, and controlled-source electromagnetic (CS-AMT) methods are discussed. Imaging results demonstrate an improved lithological characterization of the landslide structures (delineation of the sliding planes, identification of the fractures, discrimination of clay lenses with enhanced resolution); further, water infiltration within the soil matrix and/or the fractures is discriminated allowing better modelling of the hydrological regime of the landslides at the slope scale. This research is conducted in the frame of the project HYDROSLIDE - Hydrogeophysical Monitoring of Clay-Rich Landslides funded by the Austrian Science Fund (FWF) and the French Research Agency (ANR).

Structural features and high-temperature transport in SrFe0.7Mo0.3O3-δ

NASA Astrophysics Data System (ADS)

Merkulov, O. V.; Markov, A. A.; Patrakeev, M. V.; Leonidov, I. A.; Shalaeva, E. V.; Tyutyunnik, A. P.; Kozhevnikov, V. L.

2018-02-01

The complex oxide SrFe0.7Mo0.3O3-δ was obtained by combustion of the organometallic precursor in air followed by annealing in an argon flow at 1350 °C, and characterized with the help of X-ray and electron diffraction methods. Oxygen nonstoichiometry and electrical conductivity data were collected in the oxygen partial pressure range from 10-19 to 0.5 atm at temperatures 750-950 °C. The as-prepared single phase oxide SrFe0.7Mo0.3O3-δ with the cubic double perovskite structure (SG Fm3m) is shown to undergo a structural transition to the tetragonal double perovskite phase (SG I4mmm) in the result of reducing treatment at pO2 = 10-12 atm and 950 °C. The ordered phases are characterized by a strong anti-site disordering of iron and molybdenum and nearly zero long-range ordering parameter. The maximal concentration of n-type carriers is about four times larger than of p-type carriers in the studied limits of oxygen pressure and temperature. The mobility of p-type carriers is found to vary within 0.02-0.03 cm2 V-1 s-1 with the migration energy of about 0.4 eV, while the n-type mobility being approximately twice higher does not practically depend on temperature. Such features as good electrical conductivity, which can rise up to 40 S cm-1 in reducing conditions and a considerable amount of oxygen vacancies favorable for fast oxygen ion transport are beneficial for application of SrFe0.7Mo0.3O3-δ as anode material in SOFCs and oxygen membrane for hydrogen generation by a water splitting.

Sensitive photo-thermal response of graphene oxide for mid-infrared detection

NASA Astrophysics Data System (ADS)

Bae, Jung Jun; Yoon, Jung Hyun; Jeong, Sooyeon; Moon, Byoung Hee; Han, Joong Tark; Jeong, Hee Jin; Lee, Geon-Woong; Hwang, Ha Ryong; Lee, Young Hee; Jeong, Seung Yol; Lim, Seong Chu

2015-09-01

This study characterizes the effects of incident infrared (IR) radiation on the electrical conductivity of graphene oxide (GO) and examines its potential for mid-IR detection. Analysis of the mildly reduced GO (m-GO) transport mechanism near room temperature reveals variable range hopping (VRH) for the conduction of electrons. This VRH behavior causes the m-GO resistance to exhibit a strong temperature dependence, with a large negative temperature coefficient of resistance of approximately -2 to -4% K-1. In addition to this hopping transport, the presence of various oxygen-related functional groups within GO enhances the absorption of IR radiation significantly. These two GO material properties are synergically coupled and provoke a remarkable photothermal effect within this material; specifically, a large resistance drop is exhibited by m-GO in response to the increase in temperature caused by the IR absorption. The m-GO bolometer effect identified in this study is different from that exhibited in vanadium oxides, which require added gold-black films that function as IR absorbers owing to their limited IR absorption capability.This study characterizes the effects of incident infrared (IR) radiation on the electrical conductivity of graphene oxide (GO) and examines its potential for mid-IR detection. Analysis of the mildly reduced GO (m-GO) transport mechanism near room temperature reveals variable range hopping (VRH) for the conduction of electrons. This VRH behavior causes the m-GO resistance to exhibit a strong temperature dependence, with a large negative temperature coefficient of resistance of approximately -2 to -4% K-1. In addition to this hopping transport, the presence of various oxygen-related functional groups within GO enhances the absorption of IR radiation significantly. These two GO material properties are synergically coupled and provoke a remarkable photothermal effect within this material; specifically, a large resistance drop is exhibited by m-GO in response to the increase in temperature caused by the IR absorption. The m-GO bolometer effect identified in this study is different from that exhibited in vanadium oxides, which require added gold-black films that function as IR absorbers owing to their limited IR absorption capability. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr04039f

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Infrared identification of internal overheating components inside an electric control cabinet by inverse heat transfer problem

NASA Astrophysics Data System (ADS)

Yang, Li; Wang, Ye; Liu, Huikai; Yan, Guanghui; Kou, Wei

2014-11-01

The components overheating inside an object, such as inside an electric control cabinet, a moving object, and a running machine, can easily lead to equipment failure or fire accident. The infrared remote sensing method is used to inspect the surface temperature of object to identify the overheating components inside the object in recent years. It has important practical application of using infrared thermal imaging surface temperature measurement to identify the internal overheating elements inside an electric control cabinet. In this paper, through the establishment of test bench of electric control cabinet, the experimental study was conducted on the inverse identification technology of internal overheating components inside an electric control cabinet using infrared thermal imaging. The heat transfer model of electric control cabinet was built, and the temperature distribution of electric control cabinet with internal overheating element is simulated using the finite volume method (FVM). The outer surface temperature of electric control cabinet was measured using the infrared thermal imager. Combining the computer image processing technology and infrared temperature measurement, the surface temperature distribution of electric control cabinet was extracted, and using the identification algorithm of inverse heat transfer problem (IHTP) the position and temperature of internal overheating element were identified. The results obtained show that for single element overheating inside the electric control cabinet the identifying errors of the temperature and position were 2.11% and 5.32%. For multiple elements overheating inside the electric control cabinet the identifying errors of the temperature and positions were 3.28% and 15.63%. The feasibility and effectiveness of the method of IHTP and the correctness of identification algorithm of FVM were validated.

Power system applications of high temperature superconductors

NASA Astrophysics Data System (ADS)

Garlick, W. G.

This paper presents an overview of potential applications for high temperature superconductors (HTSs) in the field of power engineering. For almost 10 years material scientists, chemists and physicists have had the freedom to find, explore and characterize the properties of new HTS materials. 10 years is not a long time in the development of a revolutionary technology, but it seems like an age to the engineer who has recognized its potential and waits impatiently for the technology to stabilize in order to apply it. Largely due to Government and Industry partnerships, only a few years after the discovery of HTS, electrical power applications based on HTS are now being designed and tested. These applications offer many benefits to the resident electrical system: increased energy efficiency, smaller equipment, reduced emissions, increased stability and reliability, deferred expansion and flexible transmission and distribution. They have a common focus: lower electricity costs, improved environmental quality and more competitive products for a global market. For HTS to become a commercial success, the development of materials technologies is necessary but not sufficient on its own; the development of a capability to design and manufacture products that use the materials is also fundamental to a viable and successful industrial base.

Anomalous thermal diffusivity in underdoped YBa2Cu3O6+x

PubMed Central

Levenson-Falk, Eli M.; Ramshaw, B. J.; Bonn, D. A.; Liang, Ruixing; Hardy, W. N.; Hartnoll, Sean A.; Kapitulnik, Aharon

2017-01-01

The thermal diffusivity in the ab plane of underdoped YBCO crystals is measured by means of a local optical technique in the temperature range of 25–300 K. The phase delay between a point heat source and a set of detection points around it allows for high-resolution measurement of the thermal diffusivity and its in-plane anisotropy. Although the magnitude of the diffusivity may suggest that it originates from phonons, its anisotropy is comparable with reported values of the electrical resistivity anisotropy. Furthermore, the anisotropy drops sharply below the charge order transition, again similar to the electrical resistivity anisotropy. Both of these observations suggest that the thermal diffusivity has pronounced electronic as well as phononic character. At the same time, the small electrical and thermal conductivities at high temperatures imply that neither well-defined electron nor phonon quasiparticles are present in this material. We interpret our results through a strongly interacting incoherent electron–phonon “soup” picture characterized by a diffusion constant D∼vB2τ, where vB is the soup velocity, and scattering of both electrons and phonons saturates a quantum thermal relaxation time τ∼ℏ/kBT. PMID:28484003

Electrically tunable transport and high-frequency dynamics in antiferromagnetic S r3I r2O7

NASA Astrophysics Data System (ADS)

Seinige, Heidi; Williamson, Morgan; Shen, Shida; Wang, Cheng; Cao, Gang; Zhou, Jianshi; Goodenough, John B.; Tsoi, Maxim

2016-12-01

We report dc and high-frequency transport properties of antiferromagnetic S r3I r2O7 . Temperature-dependent resistivity measurements show that the activation energy of this material can be tuned by an applied dc electrical bias. The latter allows for continuous variations in the sample resistivity of as much as 50% followed by a reversible resistive switching at higher biases. Such a switching is of high interest for antiferromagnetic applications in high-speed memory devices. Interestingly, we found the switching behavior to be strongly affected by a high-frequency (microwave) current applied to the sample. The microwaves at 3-7 GHz suppress the dc switching and produce resonancelike features that we tentatively associated with the dissipationless magnonics recently predicted to occur in antiferromagnetic insulators subject to ac electric fields. We have characterized the effects of microwave irradiation on electronic transport in S r3I r2O7 as a function of microwave frequency and power, strength and direction of external magnetic field, strength and polarity of applied dc bias, and temperature. Our observations support the potential of antiferromagnetic materials for high-speed/high-frequency spintronic applications.

Magnetic properties evolution of a high permeability nanocrystalline FeCuNbSiB during thermal ageing

NASA Astrophysics Data System (ADS)

Lekdim, Atef; Morel, Laurent; Raulet, Marie-Ange

2017-07-01

It is found to be one of the major issues while designing an aircraft, mass and volume have to be reduced in order to achieve energy efficiency. This leads to a high compactness of the electrical components which enables them to withstand at high temperatures. The magnetic components which are responsible for the electrical energy conversion, therefore exposed to high temperatures in working conditions. Their thermal ageing becomes a serious problem and deserves a particular attention. The FeCuNbSiB nanocrystalline materials have been selected for this ageing study because they are used in power electronic systems very frequently. The objective of the study is based on monitoring the magnetic characteristics under the condition of several continuous thermal ageing (100, 150, 200 and 240 °C). An important, experimental work of magnetic characterization is being done through a specific monitoring protocol and X-ray diffraction (XRD) along with magnetostriction measurements was carried out to support the study of the evolution of the anisotropy energies with aging. The latter is discussed in this paper to explain and give the hypothesis about the aging phenomena. Contribution to the topical issue "Electrical Engineering Symposium (SGE 2016)", edited by Adel Razek

Utilization of Indonesia's Hot Spring Sources for Electricity using Kalina Cycle and Organic Rankine Cycle

NASA Astrophysics Data System (ADS)

Prabumukti, Grano; Purwanto; Widodo, Wahyu

2018-02-01

Indonesia posses 40% of the world's geothermal energy sources. The existence of hydrothermal sources is usually characterized by their surface manifestations such as hot springs, geysers and fumarole. Hot spring has a potential to be used as a heat source to generate electricity especially in a rural and isolated area. Hot springs can be converted into electricity by binary thermodynamic cycles such as Kalina cycle and ORC. The aim of this study is to obtain the best performances of cycle configuration and the potential power capacity. Simulation is conducted using UNISIM software with working fluid and its operating condition as the decision variables. The simulation result shows that R1234yf and propene with simple ORC as desired working fluid and cycle configuration. It reaches a maximum thermal efficiency up to 9.6% with a specific turbine inlet pressure. Higher temperature heat source will result a higher thermal efficiency‥ Cycle thermal efficiency varies from 4.7% to 9.6% depends on source of hot spring temperature. Power capacity that can be generated using Indonesia's hot spring is ranged from 2 kWe to 61.2 kWe. The highest capacity located in Kawah Sirung and the least located in Kaendi.

Synthesis and dc electrical conductivity of Cr-doped CeO2 nanoparticles by solution combustion method

NASA Astrophysics Data System (ADS)

Harish, B. M.; Avinash, B. S.; Chaturmukha, V. S.; Jayanna, H. S.; Suresh, S.; Naveen, C. S.; Lamani, Ashok R.

2018-04-01

NPs of Ce1-xCrxO2 (x=0, 0.04, 0.08, 0.12) have been synthesized by solution combustion method using glycine as fuel. The effect of chromium on structural and dc electrical conductivity of cerium oxide nanoparticles were investigated. The obtained powder is characterized by UV-visible spectrometer, X-ray diffractometer (XRD), Scanning electron microscope (SEM) and Energy dispersive X-Ray analysis (EDS). X-ray diffraction analysis carried out on calcined samples reveals that successful incorporation of Cr2+ in CeO2 lattice where as SEM studies confirms the porous morphological structure of the prepared sample. The Keithley source meter is used to measure the dc conductivity of samples in the temperature range from 303K to 623K. The conductivity was found to be increases with increase of temperature as well as the Cr concentration due to semiconducting behavior of material and change in the charge carrier concentration. The activation energy decreases with increasing chromium concentration. The present work deals with the effect of chromium additive on structural and the D.C electrical properties Ce1-xCrxO2 NPs.

Dipole-Oriented Molecular Solids Can Undergo a Phase Change and Still Maintain Electrical Polarization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cassidy, Andrew; Jørgensen, Mads R. V.; Rosu-Finsen, Alexander

2016-10-02

It has recently been demonstrated that nanoscale molecular films can spontaneously assemble to self-generate intrinsic electric fields that can exceed 10 8 V/m. These electric fields originate from polarization charges in the material that arise because the films self-assemble to orient molecular dipole moments. This has been called the spontelectric effect. Such growth of spontaneously polarized layers of molecular solids has implications for our understanding of how intermolecular interactions dictate the structure of molecular materials used in a range of applications, for example, molecular semiconductors, sensors, and catalysts. In this paper, we present the first in situ structural characterization ofmore » a representative spontelectric solid, nitrous oxide. Infrared spectroscopy, temperature-programmed desorption, and neutron reflectivity measurements demonstrate that polarized films of nitrous oxide undergo a structural phase transformation upon heating above 48 K. A mean-field model can be used to describe quantitatively the magnitude of the spontaneously generated field as a function of film-growth temperature, and this model also recreates the phase change. Finally, this reinforces the spontelectric model as a means of describing long-range dipole–dipole interactions and points to a new type of ordering in molecular thin films.« less

Low temperature hall effect investigation of conducting polymer-carbon nanotubes composite network.

PubMed

Bahrami, Afarin; Talib, Zainal Abidin; Yunus, Wan Mahmood Mat; Behzad, Kasra; M Abdi, Mahnaz; Din, Fasih Ud

2012-11-14

Polypyrrole (PPy) and polypyrrole-carboxylic functionalized multi wall carbon nanotube composites (PPy/f-MWCNT) were synthesized by in situ chemical oxidative polymerization of pyrrole on the carbon nanotubes (CNTs). The structure of the resulting complex nanotubes was characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The effects of f-MWCNT concentration on the electrical properties of the resulting composites were studied at temperatures between 100 K and 300 K. The Hall mobility and Hall coefficient of PPy and PPy/f-MWCNT composite samples with different concentrations of f-MWCNT were measured using the van der Pauw technique. The mobility decreased slightly with increasing temperature, while the conductivity was dominated by the gradually increasing carrier density.

Reliability and efficacy of organic passivation for polycrystalline silicon solar cells at room temperature

NASA Astrophysics Data System (ADS)

Shinde, Onkar S.; Funde, Adinath M.; Jadkar, Sandesh R.; Dusane, Rajiv O.; Dhere, Neelkanth G.; Ghaisas, Subhash V.

2016-09-01

Oleylamine is used as a passivating layer instead of commercial high temperature SiNx. Oleylamine coating applied on the n-type emitter side with p-type base polycrystalline silicon solar cells at room temperature using a simple spin coating method. It has been observed that there is 16% increase in efficiency after Oleylamine coating. Further, the solar cell was subjected to standard characterization namely current-voltage measurement for electrical parameters and Fourier transform infrared spectroscopy to understand the interaction of emitter surface and passivating Oleylamine. However, the passivation layer is not stable due to the reaction between Oleylamine and ambient air content such as humidity and carbon dioxide. This degradation can be prevented with suitable overcoating.

Performance characteristics of an electric vehicle lead-acid battery pack at elevated temperatures

NASA Technical Reports Server (NTRS)

Chapman, P.

1982-01-01

Discharge testing data electric car battery pack over initial electrolyte temperature variations between 27 and 55 C are presented. The tests were conducted under laboratory conditions and then compared to detailed electric vehicle simulation models. Battery discharge capacity increased with temperature for constant current discharges, and battery energy capacity increased with temperature for constant power discharges. Dynamometer tests of the electric test vehicle showed an increase in range of 25% for the higher electrolyte temperature.

Deposition and Characterization of Hermetic, Biocompatible Thin Film Coatings for Implantable, Electrically Active Devices

NASA Astrophysics Data System (ADS)

Sweitzer, Robyn K.

Retinal prostheses may be used to support patients suffering from Age-related macular degeneration or retinitis pigmentosa. A hermetic encapsulation of the poly(imide )-based prosthesis is important in order to prevent the leakage of water and ions into the electric circuitry embedded in the poly(imide) matrix. The deposition of amorphous aluminum oxide (by sputtering) and diamond like carbon (by pulsed laser ablation and vacuum arc vapor deposition) were studied for the application in retinal prostheses. The resulting thin films were characterized for composition, thickness, adhesion and smoothness by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy, profilometry and light microscopy. Electrical stability was evaluated and found to be good. The as-deposited films prevented incursion of salinated fluids into the implant over two (2) three month trials soaking in normal saline at body temperature, Biocompatibility was tested in vivo by implanting coated specimen subretinally in the eye of Yucatan pigs. While amorphous aluminum oxide is more readily deposited with sufficient adhesion quality, biocompatibility studies showed a superior behavior of diamond-like carbon. Amorphous aluminum oxide had more adverse effects and caused more severe damage to the retinal tissue.

The Effects of Doping and Processing on the Thermoelectric Properties of Platinum Diantimonide Based Materials for Cryogenic Peltier Cooling Applications

NASA Astrophysics Data System (ADS)

Waldrop, Spencer Laine

The study of thermoelectrics is nearly two centuries old. In that time a large number of applications have been discovered for these materials which are capable of transforming thermal energy into electricity or using electrical work to create a thermal gradient. Current use of thermoelectric materials is in very niche applications with contemporary focus being upon their capability to recover waste heat. A relatively undeveloped region for thermoelectric application is focused upon Peltier cooling at low temperatures. Materials based on bismuth telluride semiconductors have been the gold standard for close to room temperature applications for over sixty years. For applications below room temperature, semiconductors based on bismuth antimony reign supreme with few other possible materials. The cause of this diculty in developing new, higher performing materials is due to the interplay of the thermoelectric properties of these materials. The Seebeck coecient, which characterizes the phenomenon of the conversion of heat to electricity, the electrical conductivity, and the thermal conductivity are all interconnected properties of a material which must be optimized to generate a high performance thermoelectric material. While for above room temperature applications many advancements have been made in the creation of highly ecient thermoelectric materials, the below room temperature regime has been stymied by ill-suited properties, low operating temperatures, and a lack of research. The focus of this work has been to investigate and optimize the thermoelectric properties of platinum diantimonide, PtSb2, a nearly zero gap semiconductor. The electronic properties of PtSb2 are very favorable for cryogenic Peltier applications, as it exhibits good conductivity and large Seebeck coecient below 200 K. It is shown that both n- and p-type doping may be applied to this compound to further improve its electronic properties. Through both solid solution formation and processing techniques, the thermal conductivity may be reduced in order to increase the thermoelectric gure of merit. Further reduction in thermal conductivity using other novel approaches is identied as an area of promising future research. Continued development of this material has the potential to generate a suitable replacement for some low temperature applications, but will certainly further scientic knowledge and understanding of the optimization of thermoelectric materials in this temperature regime.

Synthesis and Characterization of Electroresponsive Materials with Applications In: Part I. Second Harmonic Generation. Part II. Organic-Lanthanide Ion Complexes for Electroluminescence and Optical Amplifiers.

NASA Astrophysics Data System (ADS)

Claude, Charles

1995-01-01

Materials for optical waveguides were developed from two different approaches, inorganic-organic composites and soft gel polymers. Inorganic-organic composites were developed from alkoxysilane and organically modified silanes based on nonlinear optical chromophores. Organically modified silanes based on N-((3^' -trialkoxysilyl)propyl)-4-nitroaniline were synthesized and sol-gelled with trimethoxysilane. After a densification process at 190^circC with a corona discharge, the second harmonic of the film was measured with a Nd:YAG laser with a fundamental wavelength of 1064nm, d_{33} = 13pm/V. The decay of the second harmonic was expressed by a stretched bi-exponential equation. The decay time (tau _2) was equal to 3374 hours, and was comparable to nonlinear optical systems based on epoxy/Disperse Orange 1. The processing temperature of the organically modified silane was limited to 200^circC due to the decomposition of the organic chromophore. Soft gel polymers were synthesized and characterized for the development of optical waveguides with dc-electrical field assisted phase-matching. Polymers based on 4-nitroaniline terminated poly(ethylene oxide-co-propylene oxide) were shown to exhibit second harmonic generation that were optically phase-matched in an electrical field. The optical signals were stable and reproducible. Siloxane polymers modified with 1-mercapto-4-nitrobenzene and 1-mercapto-4-methylsulfonylstilbene nonlinear optical chromophores were synthesized. The physical and the linear and nonlinear optical properties of the polymers were characterized. Waveguides were developed from the polymers which were optically phase -matched and had an efficiency of 8.1%. The siloxane polymers exhibited optical phase-matching in an applied electrical field and can be used with a semiconductor laser. Organic lanthanide ion complexes for electroluminescence and optical amplifiers were synthesized and characterized. The complexes were characterized for their thermal and oxidative stability and for their optical properties. Organic-europium ion complexes based on derivatives of 2-benzoyl benzoate are stable to a temperature 70^circ C higher than the europium beta -diketonate complexes. The optical and fluorescence properties of the organic-europium ion complexes were characterized. The methoxy and the t-butyl derivatives of the europium 2-benzoylbenzoate complexes exhibited fluorescence quantum efficiencies that were comparable to europium tris(thenoyl trifluoroacetonate) in methylene chloride but the extinction coefficient was two-thirds of the europium thenoyltrifluoroacetonate complexes. The last complex characterized was the europium bis(diphenylphosphino)imine complex. The complex exhibited thermal stability to 550 ^circC under nitrogen.

MPPT implementation for the outdoor characterization of CPV modules

NASA Astrophysics Data System (ADS)

Sánchez, Daniel; Mora, Jaime; Calvo-Parra, Gustavo; Martínez, María

2015-09-01

One of the challenges during the characterization of CPV modules is to deal with the thermal behavior. During normal operation in the field the concentrator is connected to the inverter and a fraction of the energy coming from the sun is dissipated with the corresponding conversion into electricity. On the other hand, when making the characterization of CPV modules, they are usually kept in VOC between I-V sweeps, what means that none energy is converted into electricity resulting in a higher operation temperature. Current standards, like IEC-62108:2007 and IEC-62670-3 C01 draft, define that, during the outdoor characterization, the CPV module should be connected to an electrical load to maintain it near MPP between I-V sweeps, what simulates normal operating conditions. The easiest solution could be to use mini-inverters, but it is an expensive solution and not easily adaptable to the different technologies. ISFOC has designed and developed a low-cost MPPT equipment that can be easily implemented in an outdoor characterization laboratory. This equipment is compatible with most of the CPV technologies since it covers a wide range of voltage and current values (up to 150V and 10A) and it is able to distinguish between absolute and local MPP what permits working with modules in any phase of development or making shading effects measurements. Currently, the MPPT is implemented and in operation at ISFOC's outdoor laboratory to make the long term validation. But the results obtained up to now are very promising; the equipment is able to maintain the CPV module under test within a ±3% of the expected power in stable conditions and is able to keep tracking the MPP after any variation in the operating conditions, like cloudy periods, tracking incidence, shading, etc.

Thermal and other tests of photovoltaic modules performed in natural sunlight

NASA Technical Reports Server (NTRS)

Stultz, J. W.

1978-01-01

The bulk of the testing was the characterization of twenty-nine modules according to their nominal operating cell temperature (NOCT) and the effect on NOCT of changes in module design, various residential roof mounting configurations, and dirt accumulation. Other tests, often performed parallel with the NOCT measurements, evaluated the improvement in electrical performance by cooling the modules with water and by channeling the waste heat into a phase change material (wax). Electrical degradation resulting from the natural marriage of photovoltaic and solar water heating modules was also demonstrated. Cost effectiveness of each of these techniques are evaluated in light of the LSA cost goal of $0.50 per watt.

MIS capacitor studies on silicon carbide single crystals

NASA Technical Reports Server (NTRS)

Kopanski, J. J.

1990-01-01

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

Temperature limited heater utilizing non-ferromagnetic conductor

DOEpatents

Vinegar,; Harold J. , Harris; Kelvin, Christopher [Houston, TX

2012-07-17

A heater is described. The heater includes a ferromagnetic conductor and an electrical conductor electrically coupled to the ferromagnetic conductor. The ferromagnetic conductor is positioned relative to the electrical conductor such that an electromagnetic field produced by time-varying current flow in the ferromagnetic conductor confines a majority of the flow of the electrical current to the electrical conductor at temperatures below or near a selected temperature.

The impact of monsoon intraseasonal variability on renewable power generation in India

NASA Astrophysics Data System (ADS)

Dunning, C. M.; Turner, A. G.; Brayshaw, D. J.

2015-06-01

India is increasingly investing in renewable technology to meet rising energy demands, with hydropower and other renewables comprising one-third of current installed capacity. Installed wind-power is projected to increase 5-fold by 2035 (to nearly 100GW) under the International Energy Agency's New Policies scenario. However, renewable electricity generation is dependent upon the prevailing meteorology, which is strongly influenced by monsoon variability. Prosperity and widespread electrification are increasing the demand for air conditioning, especially during the warm summer. This study uses multi-decadal observations and meteorological reanalysis data to assess the impact of intraseasonal monsoon variability on the balance of electricity supply from wind-power and temperature-related demand in India. Active monsoon phases are characterized by vigorous convection and heavy rainfall over central India. This results in lower temperatures giving lower cooling energy demand, while strong westerly winds yield high wind-power output. In contrast, monsoon breaks are characterized by suppressed precipitation, with higher temperatures and hence greater demand for cooling, and lower wind-power output across much of India. The opposing relationship between wind-power supply and cooling demand during active phases (low demand, high supply) and breaks (high demand, low supply) suggests that monsoon variability will tend to exacerbate fluctuations in the so-called demand-net-wind (i.e., electrical demand that must be supplied from non-wind sources). This study may have important implications for the design of power systems and for investment decisions in conventional schedulable generation facilities (such as coal and gas) that are used to maintain the supply/demand balance. In particular, if it is assumed (as is common) that the generated wind-power operates as a price-taker (i.e., wind farm operators always wish to sell their power, irrespective of price) then investors in conventional facilities will face additional weather-volatility through the monsoonal impact on the length and frequency of production periods (i.e. their load-duration curves).

Growth and characterization of pure and Cadmium chloride doped KDP Crystals grown by gel medium

NASA Astrophysics Data System (ADS)

Kalaivani, M. S.; Asaithambi, T.

2016-10-01

Crystal growth technology provides an important basis for many industrial branches. Crystals are the unrecognized pillars of modern technology. Without crystals, there is no electronic industry, no photonic industry, and no fiber optic communications. Single crystals play a major role and form the strongest base for the fast growing field of engineering, science and technology. Crystal growth is an interdisciplinary subject covering physics, chemistry, material science, chemical engineering, metallurgy, crystallography, mineralogy, etc. In past few decades, there has been a keen interest on crystal growth processes, particularly in view of the increasing demand of materials for technological applications. Optically good quality pure and metal doped KDP crystals have been grown by gel method at room temperature and their characterization have been studied. Gel method is a much uncomplicated method and can be utilized to synthesize crystals which are having low solubility. Potassium dihydrogen orthophosphate KH2PO4 (KDP) continues to be an interesting material both academically and industrially. KDP is a representative of hydrogen bonded materials which possess very good electro - optic and nonlinear optical properties in addition to interesting electrical properties. Due to this interesting properties, we made an attempt to grow pure and cadmium chloride doped KDP crystals in various concentrations (0.002, 0.004, 0.006, 0.008 and 0.010) using gel method. The grown crystals were collected after 20 days. We get crystals with good quality and shaped. The dc electrical conductivity (resistance, capacitance and dielectric constant) values were measured at frequencies in the range of 1 KHZ and 100 HZ of pure and cadmium chloride added crystal with a temperature range of 400C to 1300C using simple two probe setup with Q band digital LCR meter present in our lab. The electrical conductivity increases with increase of temperature. The dielectric constants of metal doped KDP crystals were slightly decreased compared to pure KDP crystals.

Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

NASA Astrophysics Data System (ADS)

Singh, Satyendra Kumar; Hazra, Purnima

2017-04-01

In this article, temperature-dependent current-voltage characteristics of n-ZnO/p-Si nanoparticle thin film heterojunction diode grown by RF sputtering technique are analyzed in the temperature range of 300-433 k to investigate the performance of the device in high temperature environment. The microstructural, morphological, optical and temptrature dependent electrical properties of as-grown nanoparticle thin film were characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM), field emmision scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), variable angle ellipsometer and semiconductor device analyzer. XRD spectra of as-grown ZnO films are exhibited that highly c-axis oriented ZnO nanostructures are grown on p- Si〈100〉 substrate whereas AFM and FESEM images confirm the homogeneous deposition of ZnO nanoparticles on surface of Si substratewith minimum roughness.The optical propertiesof as-grown ZnO nanoparticles have been measured in the spectral range of 300-800 nm using variable angle ellipsometer.To measure electrical parameters of the device prototype in the temperature range of room temperature (300 K) to 433 K, large area ohmic contacts were fabricated on both side of the ZnO/Si heterostructure. From the current-voltage charcteristics of ZnO/Si heterojunction device, it is observed that the device exhibits rectifing nature at room temperature. However, with increase in temperature, reverse saturation current and barrier height are found to increase, whereas ideality factor is started decreasing. This phenomenon confirms that barrier inhomogeneities are present at the interface of ZnO/Si heterojunction, as a result of lattice constant and thermal coefficient mismatch between Si and ZnO. Therefore, a modified value of Richardson constant [33.06 Acm-2K-2] has been extracted from the temperature-dependent electrical characteristics after assuming the Gaussian distribution of special barrier height inhomogeneities across the Si/ZnO interface which is close to its theoretical value [32 Acm-2K-2]. This result indicates that regardless of presence of barrier height inmogeneities, ZnO/Si heterojunction diode still hasability to perform well in high temperature environment.

High temperature superconducting fault current limiter

DOEpatents

Hull, J.R.

1997-02-04

A fault current limiter for an electrical circuit is disclosed. The fault current limiter includes a high temperature superconductor in the electrical circuit. The high temperature superconductor is cooled below its critical temperature to maintain the superconducting electrical properties during operation as the fault current limiter. 15 figs.

Incorporating residual temperature and specific humidity in predicting weather-dependent warm-season electricity consumption

NASA Astrophysics Data System (ADS)

Guan, Huade; Beecham, Simon; Xu, Hanqiu; Ingleton, Greg

2017-02-01

Climate warming and increasing variability challenges the electricity supply in warm seasons. A good quantitative representation of the relationship between warm-season electricity consumption and weather condition provides necessary information for long-term electricity planning and short-term electricity management. In this study, an extended version of cooling degree days (ECDD) is proposed for better characterisation of this relationship. The ECDD includes temperature, residual temperature and specific humidity effects. The residual temperature is introduced for the first time to reflect the building thermal inertia effect on electricity consumption. The study is based on the electricity consumption data of four multiple-street city blocks and three office buildings. It is found that the residual temperature effect is about 20% of the current-day temperature effect at the block scale, and increases with a large variation at the building scale. Investigation of this residual temperature effect provides insight to the influence of building designs and structures on electricity consumption. The specific humidity effect appears to be more important at the building scale than at the block scale. A building with high energy performance does not necessarily have low specific humidity dependence. The new ECDD better reflects the weather dependence of electricity consumption than the conventional CDD method.

"Application of Tunable Diode Laser Spectrometry to Isotopic Studies for Exobiology"

NASA Technical Reports Server (NTRS)

Sauke, Todd B.

1999-01-01

Computer-controlled electrically-activated valves for rapid gas-handling have been incorporated into the Stable Isotope Laser Spectrometer (SILS) which now permits rapid filling and evacuating of the sample and reference gas cells, Experimental protocols have been developed to take advantage of the fast gas handling capabilities of the instrument and to achieve increased accuracy which results from reduced instrumental drift during rapid isotopic ratio measurements. Using these protocols' accuracies of 0.5 del (0.05%) have been achieved in measurements of 13C/12C in carbon dioxide. Using the small stable isotope laser spectrometer developed in a related PIDDP project of the Co-I, protocols for acquisition of rapid sequential calibration spectra were developed which resulted in 0.5 del accuracy also being achieved in this less complex instrument. An initial version of software for automatic characterization of tunable diode lasers has been developed and diodes have been characterized in order to establish their spectral output properties. A new state-of-the-art high operating temperature (200 K) mid infrared diode laser was purchased (through NASA procurement) and characterized. A thermo-electrically cooled mid infrared tunable diode laser system for use with high temperature operation lasers was developed. In addition to isotopic ratio measurements of carbon and oxygen, measurements of a third biologically important element (15N/14N in N2O gas) have been achieved to a preliminary accuracy of about 0.2%. Transfer of the basic SILS technology to the commercial sector is proceeding under an unfunded Space Act Agreement between NASA and SpiraMed, a medical diagnostic instrument company. Two patents have been issued. Foreign patents based on these two US patents have been applied for and are expected to be issued. A preliminary design was developed for a thermo-electrically cooled SILS instruments for application to planetary space flight exploration missions.

Protective interlayer for high temperature solid electrolyte electrochemical cells

DOEpatents

Singh, Prabhakar; Vasilow, Theodore R.; Richards, Von L.

1996-01-01

The invention comprises of an electrically conducting doped or admixed cerium oxide composition with niobium oxide and/or tantalum oxide for electrochemical devices, characterized by the general formula: Nb.sub.x Ta.sub.y Ce.sub.1-x-y O.sub.2 where x is about 0.0 to 0.05, y is about 0.0 to 0.05, and x+y is about 0.02 to 0.05, and where x is preferably about 0.02 to 0.05 and y is 0, and a method of making the same. This novel composition is particularly applicable in forming a protective interlayer of a high temperature, solid electrolyte electrochemical cell (10), characterized by a first electrode (12); an electrically conductive interlayer (14) of niobium and/or tantalum doped cerium oxide deposited over at least a first portion (R) of the first electrode; an interconnect (16) deposited over the interlayer; a solid electrolyte (18) deposited over a second portion of the first electrode, the first portion being discontinuous from the second portion; and, a second electrode (20) deposited over the solid electrolyte. The interlayer (14) is characterized as being porous and selected from the group consisting of niobium doped cerium oxide, tantalum doped cerium oxide, and niobium and tantalum doped cerium oxide or admixtures of the same. The first electrode (12), an air electrode, is a porous layer of doped lanthanum manganite, the solid electrolyte layer (18) is a dense yttria stabilized zirconium oxide, the interconnect layer (16) is a dense, doped lanthanum chromite, and the second electrode (20), a fuel electrode, is a porous layer of nickel-zirconium oxide cermet. The electrochemical cell (10) can take on a plurality of shapes such as annular, planar, etc. and can be connected to a plurality of electrochemical cells in series and/or in parallel to generate electrical energy.

Novel Integration of a 6t Cryogen-Free Magneto-Optical System with a Variable Temperature Sample Using a Single Cryocooler

NASA Astrophysics Data System (ADS)

Berryhill, A. B.; Coffey, D. M.; McGhee, R. W.; Burkhardt, E. E.

2008-03-01

Cryomagnetics' new "C-Mag Optical" Magneto-Optic Property Measurement System is a versatile materials and device characterization system that allows the researcher to simultaneously control the applied magnetic field and temperature of a sample while studying its electrical and optic properties. The system integrates a totally liquid cryogen-free 6T superconducting split-pair magnet with a variable temperature sample space, both cooled using a single 4.2K pulse tube refrigerator. To avoid warming the magnet when operating a sample at elevated temperatures, a novel heat switch was developed. The heat switch allows the sample temperature to be varied from 10K to 300K while maintaining the magnet at 4.2K or below. In this paper, the design and performance of the overall magnet system and the heat switch will be presented. New concepts for the next generation system will also be discussed.

Development and characterization of PdCr temperature-compensated wire resistance strain gage

NASA Technical Reports Server (NTRS)

Lei, Jih-Fen

1989-01-01

A temperature-compensated resistance static strain gage with potential to be used to 600 C was recently developed. Gages were fabricated from specially developed palladium-13 w/o chromium (Pd-13Cr) wire and platinum (Pt) compensator. When bonded to high temperature Hastelloy X, the apparent strain from room temperature to 600 C was within 400 microstrain for gages with no preheat treatment and within 3500 microstrain for gages with 16 hours prestabilization at 640 C. The apparent strain versus temperature relationship of stabilized PdCr gages were repeatable with the reproducibility within 100 microstrain during three thermal cycles to 600 C and an 11 hours soak at 600 C. The gage fabrication, construction and installation is described. Also, the coating system used for this compensated resistance strain gage is explained. The electrical properties of the strain sensing element and main characteristics of the compensated gage including apparent strain, drift and reproducibility are discussed.

Synthesis and characterization of intercalated few-layer graphenes

NASA Astrophysics Data System (ADS)

Sato, Shogo; Ichikawa, Hiroaki; Iwata, Nobuyuki; Yamamoto, Hiroshi

2014-02-01

Toward achieving room-temperature superconductivity, FeCl3-intercalated few-layer graphenes (FeCl3-FLGs) and Ca-intercalated few-layer graphenes (Ca-FLGs) were synthesized. FeCl3-FLGs were synthesized by the two-zone method and Ca-FLGs were synthesized using Ca-Li alloy. The Raman spectra of the FeCl3-FLGs showed a lower-intensity peak at 1607 cm-1 than that of the corresponding bare G. The peak at 1607 cm-1 suggested that the sample was stage 4-5 FeCl3-FLGs. The room-temperature electrical resistivity of FeCl3-FLGs was 2.65 × 10-5 Ω·m, which linearly decreased with decreasing temperature with a marked change occurring at approximately 200 K. From a XRD pattern of Ca-FLGs, we concluded that Ca is intercalated in FLGs. The room-temperature resistivity of Ca-FLGs was 3.45 × 10-5 Ω·m, which increased with decreasing temperature.

Development of Polythiophene/Acrylonitrile-Butadiene Rubbers for Artificial Muscle

NASA Astrophysics Data System (ADS)

Thipdech, Pacharavalee; Sirivat, Anuvat

2007-03-01

Electroactive polymers (EAPs) can respond to the applied electrical field by an extension or a retraction. In this work, we are interested in using an elastomeric blend for electroactive applications, acrylonitirle-butadiene rubber (NBR) containing a conductive polymer (Poly(3-thiopheneacetic acid, PTAA); the latter can be synthesized via oxidative polymerization. FT-IR, Thermogravimetric analysis (TGA), ^1H-NMR, UV-visible spectroscopy, and SEM are used to characterize the conductive polymer. Electrorheological properties are measured and investigated in terms of acrylonitrile content, blending ratio, doping level, and temperature. Experiments are carried out under oscillatory shear mode and with applied electric field strength varying from 0 to 2 kV/mm. Dielectric properties, conductivities are measured and correlated with the storage modulus responses. The storage modulus sensitivity, δG'G'0of the pure rubbers increases with increasing electric field strength. They attain the maximum values of about 30% and become constant at electric strength at and above 1000 V/mm.

Laterally inhomogeneous barrier analysis of cu/n-gap/al schottky devices

NASA Astrophysics Data System (ADS)

Çınar Demir, K.; Coşkun, C.; Kurudirek, S. V.; Öz, S.; Aydoğan, Ş.; Biber, M.

2016-04-01

In this study, we examined the electrical parameters of Cu/n-GaP/Al Schottky structures at room temperature and examined the electrical characterization of these devices depending on and Capacitance-Voltage (C-V) and Current-Voltage (I-V) measurements. A statistical study on the experimental ideality factor (n) and BHs(barrier heights) values of the devices was stated. The n and BHs of all contacts have been determined from the electrical characteristics. Even though all of the diodes were conformably prepared, there was a diode-todiode variation: the effective BHs changed from 0.988-0.07 to 1.216-0.07 eV, and the n from 1.01-0.299 to 2.16-0.299. The yielded results show that the mean electrical parameters of Schottky devices are different from one diode to another, even if they are identically prepared. It can be axplained that the lower BHs usher with the higher n values owing to inhomogeneities.

Bottom-up realization and electrical characterization of a graphene-based device.

PubMed

Maffucci, A; Micciulla, F; Cataldo, A; Miano, G; Bellucci, S

2016-03-04

We propose a bottom-up procedure to fabricate an easy-to-engineer graphene-based device, consisting of a microstrip-like circuit where few-layer graphene nanoplatelets are used to contact two copper electrodes. The graphene nanoplatelets are obtained by the microwave irradiation of intercalated graphite, i.e., an environmentally friendly, fast and low-cost procedure. The contact is created by a bottom-up process, driven by the application of a DC electrical field in the gap between the electrodes, yielding the formation of a graphene carpet. The electrical resistance of the device has been measured as a function of the gap length and device temperature. The possible use of this device as a gas sensor is demonstrated by measuring the sensitivity of its electrical resistance to the presence of gas. The measured results demonstrate a good degree of reproducibility in the fabrication process, and the competitive performance of devices, thus making the proposed technique potentially attractive for industrial applications.

Plasmonic Gold Nanorod Dispersions with Electrical and Optical Tunability

NASA Astrophysics Data System (ADS)

Grabowski, Christopher; Mahoney, Clare; Park, Kyoungweon; Jawaid, Ali; White, Timothy; Vaia, Richard

The transmissive, absorptive, electrical, and thermal properties of plasmonic gold nanorods (NRs) have led to their employment in a broad range of applications. These electro-optical properties - governed by their size, shape, and composition - are widely and precisely tunable during synthesis. Gold NRs show promise for large scale optical elements as they have been demonstrated to align faster than liquid crystal films (μs) at low fields (1 V/ μm). Successfully dispersing a high volume fraction of gold NRs requires a strategy to control particle-particle separation and thus avoid aggregation. Herein, we discuss the role of theta temperature and the ability to swell or collapse the chains of polymer-grafted gold NRs to alter the interaction potential between particles. UV-Vis spectroscopy, scattering, and electrical susceptibility characterization methods were employed to determine nanoparticle dispersion along with the degree of gold NR alignment. The development of new agile photonic materials, controllable with both light and electric fields, will help address emerging needs in laser hardening (agile filters) and variable transmission visors.

Electroluminescence and transport properties in amorphous silicon nanostructures

NASA Astrophysics Data System (ADS)

Irrera, Alessia; Iacona, Fabio; Crupi, Isodiana; Presti, Calogero D.; Franzò, Giorgia; Bongiorno, Corrado; Sanfilippo, Delfo; Di Stefano, Gianfranco; Piana, Angelo; Fallica, Pier Giorgio; Canino, Andrea; Priolo, Francesco

2006-03-01

We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend as a function of temperature with a maximum at around 60 K. The efficiency of these devices is comparable to that found in devices based on Si nanocrystals, although amorphous nanostructures exhibit peculiar working conditions (very high current densities and low applied voltages). Time resolved EL measurements demonstrate the presence of a short lifetime, only partially due to the occurrence of non-radiative phenomena, since the very small amorphous clusters formed at 900 °C are characterized by a short radiative lifetime. By forcing a current through the device a phenomenon of charge trapping in the Si nanostructures has been observed. Trapped charges affect luminescence through an Auger-type non-radiative recombination of excitons. Indeed, it is shown that unbalanced injection of carriers (electrons versus holes) is one of the main processes limiting luminescence efficiency. These data will be reported and the advantages and limitations of this approach will be discussed.

Effect of content silver and heat treatment temperature on morphological, optical, and electrical properties of ITO films by sol-gel technique

NASA Astrophysics Data System (ADS)

Mirzaee, Majid; Dolati, Abolghasem

2014-09-01

Silver-doped indium tin oxide thin films were synthesized using sol-gel dip-coating technique. The influence of different silver-dopant contents and annealing temperature on the electrical, optical, structural, and morphological properties of the films were characterized by means of four-point probe, UV-Vis spectroscopy, X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and X-ray photoelectron spectroscope (XPS). XRD analysis confirmed the formation of cubic bixbyte structure of In2O3 with silver nanoparticles annealed at 350 °C. XPS analysis showed that divalent tin transformed to tetravalent tin through oxidization, and silver nanoparticles embedded into ITO matrix covered with silver oxide shell, resulting in high quality nanocomposite thin films. The embedment of polyvinylpyrrolidone inhibited the growth of silver nanoparticles and ITO annealed at 350 °C. Delafossite structure of tin-doped AgInO2 was found at higher annealing temperatures. XRD analysis and FESEM micrographs showed that the optimum temperature to prevent the formation of AgInO2 is 350 °C. The embedment of silver particles (5-10 nm) from reduction of silver ion in ITO thin films improved the electrical conductivity and optical transmittance of ITO nanolayers. The lowest stable sheet resistance of 1,952 Ω/Sq for a 321 nm thick and an average optical transmittance of 91.8 % in the visible region with a band gap of 3.43 eV were achieved for silver-doping content of 0.04 M.

Temperature Modulation of Electric Fields in Biological Matter

PubMed Central

Daniels, Charlotte S.; Rubinsky, Boris

2011-01-01

Pulsed electric fields (PEF) have become an important minimally invasive surgical technology for various applications including genetic engineering, electrochemotherapy and tissue ablation. This study explores the hypothesis that temperature dependent electrical parameters of tissue can be used to modulate the outcome of PEF protocols, providing a new means for controlling and optimizing this minimally invasive surgical procedure. This study investigates two different applications of cooling temperatures applied during PEF. The first case utilizes an electrode which simultaneously delivers pulsed electric fields and cooling temperatures. The subsequent results demonstrate that changes in electrical properties due to temperature produced by this configuration can substantially magnify and confine the electric fields in the cooled regions while almost eliminating electric fields in surrounding regions. This method can be used to increase precision in the PEF procedure, and eliminate muscle contractions and damage to adjacent tissues. The second configuration considered introduces a third probe that is not electrically active and only applies cooling boundary conditions. This second study demonstrates that in this probe configuration the temperature induced changes in electrical properties of tissue substantially reduce the electric fields in the cooled regions. This novel treatment can potentially be used to protect sensitive tissues from the effect of the PEF. Perhaps the most important conclusion of this investigation is that temperature is a powerful and accessible mechanism to modulate and control electric fields in biological tissues and can therefore be used to optimize and control PEF treatments. PMID:21695144

Towards a Microbial Thermoelectric Cell

PubMed Central

Rodríguez-Barreiro, Raúl; Abendroth, Christian; Vilanova, Cristina; Moya, Andrés; Porcar, Manuel

2013-01-01

Microbial growth is an exothermic process. Biotechnological industries produce large amounts of heat, usually considered an undesirable by-product. In this work, we report the construction and characterization of the first microbial thermoelectric cell (MTC), in which the metabolic heat produced by a thermally insulated microbial culture is partially converted into electricity through a thermoelectric device optimized for low ΔT values. A temperature of 41°C and net electric voltage of around 250–600 mV was achieved with 1.7 L baker’s yeast culture. This is the first time microbial metabolic energy has been converted into electricity with an ad hoc thermoelectric device. These results might contribute towards developing a novel strategy to harvest excess heat in the biotechnology industry, in processes such as ethanol fermentation, auto thermal aerobic digestion (ATAD) or bioremediation, which could be coupled with MTCs in a single unit to produce electricity as a valuable by-product of the primary biotechnological product. Additionally, we propose that small portable MTCs could be conceived and inoculated with suitable thermophilic of hyperthermophilic starter cultures and used for powering small electric devices. PMID:23468862

Temperature-Dependent Dielectric Properties of Al/Epoxy Nanocomposites

NASA Astrophysics Data System (ADS)

Wang, Zijun; Zhou, Wenying; Sui, Xuezhen; Dong, Lina; Cai, Huiwu; Zuo, Jing; Chen, Qingguo

2016-06-01

Broadband dielectric spectroscopy was carried out to study the transition in electrical properties of Al/epoxy nanocomposites over the frequency range of 1-107 Hz and the temperature range of -20°C to 200°C. The dielectric permittivity, dissipation factor, and electrical conductivity of the nanocomposites increased with temperature and showed an abrupt increase around the glass transition temperature ( T g). The results clearly reveal an interesting transition of the electrical properties with increasing temperature: insulator below 70°C, conductor at about 70°C. The behavior of the transition in electrical properties of the nanocomposites was explored at different temperatures. The presence of relaxation peaks in the loss tangent and electric modulus spectra of the nanocomposites confirms that the chain segmental dynamics of the polymer is accompanied by the absorption of energy given to the system. It is suggested that the temperature-dependent transition of the electric properties in the nanocomposite is closely associated with the α-relaxation. The large increase in the dissipation factor and electric conductivity depends on the direct current conduction of thermally activated charge carriers resulting from the epoxy matrix above T g.

Water level sensor and temperature profile detector

DOEpatents

Tokarz, Richard D.

1983-01-01

A temperature profile detector comprising a surrounding length of metal tubing and an interior electrical conductor both constructed of high temperature high electrical resistance materials. A plurality of gas-filled expandable bellows made of electrically conductive material is electrically connected to the interior electrical conductor and positioned within the length of metal tubing. The bellows are sealed and contain a predetermined volume of a gas designed to effect movement of the bellows from an open circuit condition to a closed circuit condition in response to monitored temperature changes sensed by each bellows.

High temperature superconducting fault current limiter

DOEpatents

Hull, John R.

1997-01-01

A fault current limiter (10) for an electrical circuit (14). The fault current limiter (10) includes a high temperature superconductor (12) in the electrical circuit (14). The high temperature superconductor (12) is cooled below its critical temperature to maintain the superconducting electrical properties during operation as the fault current limiter (10).

Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

NASA Astrophysics Data System (ADS)

Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan

2017-07-01

We use a random telegraph signal method to investigate nitride trapped hole lateral transport in a charge trap flash memory. The concept of this method is to utilize an interface oxide trap and its associated random telegraph signal as an internal probe to detect a local channel potential change resulting from nitride charge lateral movement. We apply different voltages to the drain of a memory cell and vary a bake temperature in retention to study the electric field and temperature dependence of hole lateral movement in a nitride. Thermal energy absorption by trapped holes in lateral transport is characterized. Mechanisms of hole lateral transport in retention are investigated. From the measured and modeled results, we find that thermally assisted trap-to-band tunneling is a major trapped hole emission mechanism in nitride hole lateral transport.

Program for the development of high temperature electrical materials and components

NASA Technical Reports Server (NTRS)

Neff, W. S.; Lowry, L. R.

1972-01-01

Evaluation of high temperature, space-vacuum performance of selected electrical materials and components, high temperature capacitor development, and evaluation, construction, and endurance testing of compression sealed pyrolytic boron nitride slot insulation are described. The first subject above covered the aging evaluation of electrical devices constructed from selected electrical materials. Individual materials performances were also evaluated and reported. The second subject included study of methods of improving electrical performance of pyrolytic boron nitride capacitors. The third portion was conducted to evaluate the thermal and electrical performance of pyrolytic boron nitride as stator slot liner material under varied temperature and compressive loading. Conclusions and recommendations are presented.

Emerging applications of high temperature superconductors for space communications

NASA Technical Reports Server (NTRS)

Heinen, Vernon O.; Bhasin, Kul B.; Long, Kenwyn J.

1990-01-01

Proposed space missions require longevity of communications system components, high input power levels, and high speed digital logic devices. The complexity of these missions calls for a high data bandwidth capacity. Incorporation of high temperature superconducting (HTS) thin films into some of these communications system components may provide a means of meeting these requirements. Space applications of superconducting technology has previously been limited by the requirement of cooling to near liquid helium temperatures. Development of HTS materials with transition temperatures above 77 K along with the natural cooling ability of space suggest that space applications may lead the way in the applications of high temperature superconductivity. In order for HTS materials to be incorporated into microwave and millimeter wave devices, the material properties such as electrical conductivity, current density, surface resistivity and others as a function of temperature and frequency must be well characterized and understood. The millimeter wave conductivity and surface resistivity were well characterized, and at 77 K are better than copper. Basic microwave circuits such as ring resonators were used to determine transmission line losses. Higher Q values than those of gold resonator circuits were observed below the transition temperature. Several key HTS circuits including filters, oscillators, phase shifters and phased array antenna feeds are feasible in the near future. For technology to improve further, good quality, large area films must be reproducibly grown on low dielectric constant, low loss microwave substrates.

Alternating-current conductivity and dielectric relaxation of bulk iodoargentate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Hai-Bao, E-mail: duanhaibao4660@163.com; Yu, Shan-Shan; Zhou, Hong

Graphical abstract: The electric modulus shows single dielectric relaxation process in the measured frequency range. - Highlights: • The conduction mechanism is described by quantum mechanical tunneling model. • The applications of dielectric modulus give a simple method for evaluating the activation energy of the dielectric relaxation. • The [Ag{sub 2}I{sub 4}]{sup 2−}1-D chain and [Cu(en){sub 2}]{sup 2+} cation column form the layered stacks by hydrogen bond interactions. - Abstract: An inorganic-organic hybrid compound Cu(en){sub 2}Ag{sub 2}I{sub 4} (en = ethylenediamine) (1) was synthesized and single crystal structurally characterized. Along the [001] direction, the inorganic parts form an infinite 1-Dmore » chain and [Cu(en){sub 2}]{sup 2+} cations are separated by inorganic chain. The electrical conductivity and dielectric properties of 1 have been investigated over wide ranges of frequency. The alternating-current conductivities have been fitted to the Almond–West type power law expression with use of a single value of S. It is found that S values for 1 are nearly temperature-independent, which indicates that the conduction mechanism could be quantum mechanical tunneling (QMT) model. The dielectric loss and electric modulus show single dielectric relaxation process. The activation energy obtained from temperature-dependent electric modulus compare with the calculated from the dc conductivity plots.« less

Impact of pulse thermal processing on the properties of inkjet printed metal and flexible sensors

DOE PAGES

Joshi, Pooran C.; Kuruganti, Teja; Killough, Stephen M.

2015-03-11

In this paper, we report on the low temperature processing of environmental sensors employing pulse thermal processing (PTP) technique to define a path toward flexible sensor technology on plastic, paper, and fabric substrates. Inkjet printing and pulse thermal processing technique were used to realize mask-less, additive integration of low-cost sensors on polymeric substrates with specific focus on temperature, humidity, and strain sensors. The printed metal line performance was evaluated in terms of the electrical conductivity characteristics as a function of post-deposition thermal processing conditions. The PTP processed Ag metal lines exhibited high conductivity with metal sheet resistance values below 100more » mΩ/{whitesquare} using a pulse width as short as 250 μs. The flexible temperature and relative humidity sensors were defined on flexible polyimide substrates by direct printing of Ag metal structures. The printed resistive temperature sensor and capacitive humidity sensor were characterized for their sensitivity with focus on future smart-building applications. Strain gauges were printed on polyimide substrate to determine the mechanical properties of the silver nanoparticle films. Finally, the observed electrical properties of the printed metal lines and the sensitivity of the flexible sensors show promise for the realization of a high performance print-on-demand technology exploiting low thermal-budget PTP technique.« less

High-Temperature Phase Change Materials (PCM) Candidates for Thermal Energy Storage (TES) Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gomez, J. C.

2011-09-01

It is clearly understood that lower overall costs are a key factor to make renewable energy technologies competitive with traditional energy sources. Energy storage technology is one path to increase the value and reduce the cost of all renewable energy supplies. Concentrating solar power (CSP) technologies have the ability to dispatch electrical output to match peak demand periods by employing thermal energy storage (TES). Energy storage technologies require efficient materials with high energy density. Latent heat TES systems using phase change material (PCM) are useful because of their ability to charge and discharge a large amount of heat from amore » small mass at constant temperature during a phase transformation like melting-solidification. PCM technology relies on the energy absorption/liberation of the latent heat during a physical transformation. The main objective of this report is to provide an assessment of molten salts and metallic alloys proposed as candidate PCMs for TES applications, particularly in solar parabolic trough electrical power plants at a temperature range from 300..deg..C to 500..deg.. C. The physical properties most relevant for PCMs service were reviewed from the candidate selection list. Some of the PCM candidates were characterized for: chemical stability with some container materials; phase change transformation temperatures; and latent heats.« less

Characterization of Full Set Material Constants and Their Temperature Dependence for Piezoelectric Materials Using Resonant Ultrasound Spectroscopy

PubMed Central

Tang, Liguo; Cao, Wenwu

2016-01-01

During the operation of high power electromechanical devices, a temperature rise is unavoidable due to mechanical and electrical losses, causing the degradation of device performance. In order to evaluate such degradations using computer simulations, full matrix material properties at elevated temperatures are needed as inputs. It is extremely difficult to measure such data for ferroelectric materials due to their strong anisotropic nature and property variation among samples of different geometries. Because the degree of depolarization is boundary condition dependent, data obtained by the IEEE (Institute of Electrical and Electronics Engineers) impedance resonance technique, which requires several samples with drastically different geometries, usually lack self-consistency. The resonant ultrasound spectroscopy (RUS) technique allows the full set material constants to be measured using only one sample, which can eliminate errors caused by sample to sample variation. A detailed RUS procedure is demonstrated here using a lead zirconate titanate (PZT-4) piezoceramic sample. In the example, the complete set of material constants was measured from room temperature to 120 °C. Measured free dielectric constants and  were compared with calculated ones based on the measured full set data, and piezoelectric constants d15 and d33 were also calculated using different formulas. Excellent agreement was found in the entire range of temperatures, which confirmed the self-consistency of the data set obtained by the RUS. PMID:27168336

Characterization and organic electric-double-layer-capacitor application of KOH activated coal-tar-pitch-based carbons: Effect of carbonization temperature

NASA Astrophysics Data System (ADS)

Choi, Poo Reum; Lee, Eunji; Kwon, Soon Hyung; Jung, Ji Chul; Kim, Myung-Soo

2015-12-01

The present study reports the influence of pre-carbonization on the properties of KOH-activated coal tar pitch (CTP). The change of crystallinity and pore structure of pre-carbonized CTPs as well as their activated carbons (ACs) as function of pre-carbonization temperature are investigated. The crystallinity of pre-carbonized CTPs increases with increasing the carbonization temperature up to 600 °C, but a disorder occurs during the carbonization around 700 °C and an order happens gradually with increasing the carbonization temperatures in range of 800-1000 °C. The CTPs pre-carbonized at high temperatures are more difficult to be activated with KOH than those pre-carbonized at low temperatures due to the increase of micro-crystalline size and the decrease of surface functional groups. The micro-pores and meso-pores are well developed at around 1.0 nm and 2.4 nm, respectively, as the ACs are pre-carbonized at temperatures of 500-600 °C, exhibiting high specific capacitances as electrode materials for electric double layer capacitor (EDLC). Although the specific surface area (SSA) and pore volume of ACs pre-carbonized at temperatures of 900-1000 °C are extraordinary low (non-porous) as compared to those of AC pre-carbonized at 600 °C, their specific capacitances are comparable to each other. The large specific capacitances with low SSA ACs can be attributed to the structural change resulting from the electrochemical activation during the 1st charge above 2.0 V.

Realization of PbS thin films by reactive evaporation technique for possible opto-electronic applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

A, Abhilash, E-mail: abhiltp@cusat.ac.in; Nair, Aparna S.; S, Rajasree

2015-06-24

Stoichiometric Lead sulphide (PbS) thin films were successfully prepared on glass substrates by reactive evaporation technique. Elemental evaporation of lead and sulphur taken in different sources onto substrates held at temperature of 400±5K employed in the present study. The structural as well as compositional studies compromises compound formation. Electrical transport properties and optical co-efficient were evaluated from appropriate characterization techniques.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Driscoll, S.B.; Walton, T.C.

Polyimides have gained wide acceptance for use in many aerospace composite, electrical, and industrial applications. The intent of this work is to share with the reader practical knowledge of how some of the currently available commercial systems perform. Several prepreg processable polyimide systems were evaluated for adhesive properties and characterized with the use of SEM, TGA, DSC, TMA, Dynamic Spectroscopy, and Force vs. Time Electronic Impact Analyses for comparison. The chemistry and nature of these resin systems is reviewed, including several BMIs (new hot melts examined)., Amide-Imides (Al) and Thermoplastic Polyimide (TPI). PMR-15 and a high temperature epoxy resin aremore » included for comparison of high temperature properties. 17 references.« less

Effect of aluminium substitution on the electrical properties of Ni-Zn nanoferrites

NASA Astrophysics Data System (ADS)

Paramesh, D.; Vijaya Kumar, K.; Venkat Reddy, P.

2017-12-01

Nanoferrites of general formula Ni0.5 Zn0.5 Alx Fe2-x O4 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0, 1.2, 1.4, 1.6, 1.8 and 2.0) synthesized by sol-gel auto combustion technique can be characterized by dielectric behaviour and AC conductivity studies with the help of LCR impedance meter. This paper gives an insight on variations in dielectric constant, dielectric loss with reference to frequency, temperature and Al3+ ion substitution and also the determination of DC resistivity, activation energy and Curie temperature by two probe experimental set-up.

Development of urethane coating and potting material with improved hydrolytic and oxidative stability

NASA Technical Reports Server (NTRS)

Morris, D. E.

1981-01-01

A series of saturated hydrocarbon based urethanes was prepared and characterized for hydrolytic and oxidative stability. A series of ether based urethanes was used as a basis for comparison. The alkane base urethanes were found to be hydrolytically and oxidatively stable and had excellent electrical properties. The alkane based materials absorbed little or no water and were reversion resistant. There was little loss in hardness or weight when exposed to high temperature and humidity. Dielectric properties were excellent and suffered little adverse effects from the high temperature/humidity conditions. The alkane based urethanes were not degraded by ozone exposure.

Synthesis of ZrO 2 thin films by atomic layer deposition: growth kinetics, structural and electrical properties

NASA Astrophysics Data System (ADS)

Cassir, Michel; Goubin, Fabrice; Bernay, Cécile; Vernoux, Philippe; Lincot, Daniel

2002-06-01

Ultra thin films of ZrO 2 were synthesized on soda lime glass and SnO 2-coated glass, using ZrCl 4 and H 2O precursors by atomic layer deposition (ALD), a sequential CVD technique allowing the formation of dense and homogeneous films. The effect of temperature on the film growth kinetics shows a first temperature window for ALD processing between 280 and 350 °C and a second regime or "pseudo-window" between 380 and 400 °C, with a growth speed of about one monolayer per cycle. The structure and morphology of films of less than 1 μm were characterized by XRD and SEM. From 275 °C, the ZrO 2 film is crystallized in a tetragonal form while a mixture of tetragonal and monoclinic phases appears at 375 °C. Impedance spectroscopy measurements confirmed the electrical properties of ZrO 2 and the very low porosity of the deposited layer.

The effect of bismuth on the structure, magnetic and electric properties of Co2MnO4 spinel multiferroic

NASA Astrophysics Data System (ADS)

Chouaya, H.; Smari, M.; Walha, I.; Dhahri, E.; Graça, M. P. F.; Valente, M. A.

2018-04-01

Mixed Co2Mn1-xBixO4 (x = 0, x = 0.05 and x = 0.1) samples were prepared by the sol-gel method using the citric acid route and characterized by various techniques. The X-ray diffraction (XRD) and Raman spectroscopic analyses confirmed the formation of inverse spinel cubic structure with Fd 3 ‾ m space group. The introduction of Bismuth (Bi) into Co2MnO4 did not modify the ferrimagnetic character of the parent compound Co2MnO4, whereas the field-cooled magnetizations MFC and the Curie temperature Tc decreased when increasing the Bi content. The electrical properties showed an activation energy (Ea) increase caused by the decrease of the double-exchange interaction following the substitution of Mn3+ by Bi3+. Eventually, the temperature coefficient of resistance (TCR) shows significant values for all samples can be investigated also as good candidates for bolometer applications.

Direct Fabrication of Inkjet-Printed Dielectric Film for Metal-Insulator-Metal Capacitors

NASA Astrophysics Data System (ADS)

Cho, Cheng-Lin; Kao, Hsuan-ling; Wu, Yung-Hsien; Chang, Li-Chun; Cheng, Chun-Hu

2018-01-01

In this study, an inkjet-printed dielectric film that used a polymer-based SU-8 ink was fabricated for use in a metal-insulator-metal (MIM) capacitor. Thermal treatment of the inkjet-printed SU-8 polymer film affected its surface morphology, chemical structure, and surface wettability. A 20-min soft-bake at 60°C was applied to eliminate inkjet-printed bubbles and ripples. The ultraviolet-exposed SU-8 polymer film was crosslinked at temperatures between 120°C and 220°C and became disordered at 270°C, demonstrated using Fourier-transform infrared spectroscopy. A maximum SU-8 polymer film hard-bake temperature of 120°C was identified, and a printing process was subsequently employed because the appropriate water contact angle of the printed film was 79°. Under the appropriate inkjet printing conditions, the two-transmission-line method was used to extract the dielectric and electrical properties of the SU-8 polymer film, and the electrical behavior of the fabricated MIM capacitor was also characterized.

The Huygens Atmospheric Structure Instrument (HASI): Expected Results at Titan and Performance Verification in Terrestrial Atmosphere

NASA Technical Reports Server (NTRS)

Ferri, F.; Fulchignoni, M.; Colombatti, G.; Stoppato, P. F. Lion; Zarnecki, J. C.; Harri, A. M.; Schwingenschuh, K.; Hamelin, M.; Flamini, E.; Bianchini, G.;

Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates

NASA Astrophysics Data System (ADS)

Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Varavin, V. S.; Dvoretskii, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Sidorov, G. Yu.

2017-12-01

Metal-insulator-semiconductor (MIS) structures based on n(p)-Hg1-xCdxTe (x = 0.22-0.40) with near-surface variable-gap layers were grown by the molecular-beam epitaxy (MBE) technique on the Si (0 1 3) substrates. Electrical properties of MIS structures were investigated experimentally at various temperatures (9-77 K) and directions of voltage sweep. The ;narrow swing; technique was used to determine the spectra of fast surface states with the exception of hysteresis effects. It is established that the density of fast surface states at the MCT/Al2O3 interface at a minimum does not exceed 3 × 1010 eV-1 × cm-2. For MIS structures based on n-MCT/Si(0 1 3), the differential resistance of the space-charge region in strong inversion mode in the temperature range 50-90 K is limited by the Shockley-Read-Hall generation in the space-charge region.

A Review of Methods Applied by the U.S. Geological Survey in the Assessment of Identified Geothermal Resources

USGS Publications Warehouse

Williams, Colin F.; Reed, Marshall J.; Mariner, Robert H.

2008-01-01

The U. S. Geological Survey (USGS) is conducting an updated assessment of geothermal resources in the United States. The primary method applied in assessments of identified geothermal systems by the USGS and other organizations is the volume method, in which the recoverable heat is estimated from the thermal energy available in a reservoir. An important focus in the assessment project is on the development of geothermal resource models consistent with the production histories and observed characteristics of exploited geothermal fields. The new assessment will incorporate some changes in the models for temperature and depth ranges for electric power production, preferred chemical geothermometers for estimates of reservoir temperatures, estimates of reservoir volumes, and geothermal energy recovery factors. Monte Carlo simulations are used to characterize uncertainties in the estimates of electric power generation. These new models for the recovery of heat from heterogeneous, fractured reservoirs provide a physically realistic basis for evaluating the production potential of natural geothermal reservoirs.

Localized synthesis, assembly and integration of silicon nanowires

NASA Astrophysics Data System (ADS)

Englander, Ongi

Localized synthesis, assembly and integration of one-dimensional silicon nanowires with MEMS structures is demonstrated and characterized in terms of local synthesis processes, electric-field assisted self-assembly, and a proof-of-concept nanoelectromechanical system (HEMS) demonstration. Emphasis is placed on the ease of integration, process control strategies, characterization techniques and the pursuit of integrated devices. A top-down followed by a bottom-up integration approach is utilized. Simple MEMS heater structures are utilized as the microscale platforms for the localized, bottom-up synthesis of one-dimensional nanostructures. Localized heating confines the high temperature region permitting only localized nanostructure synthesis and allowing the surroundings to remain at room temperature thus enabling CMOS compatible post-processing. The vapor-liquid-solid (VLS) process in the presence of a catalytic nanoparticle, a vapor phase reactant, and a specific temperature environment is successfully employed locally. Experimentally, a 5nm thick gold-palladium layer is used as the catalyst while silane is the vapor phase reactant. The current-voltage behavior of the MEMS structures can be correlated to the approximate temperature range required for the VLS reaction to take place. Silicon nanowires averaging 45nm in diameter and up to 29mum in length synthesized at growth rates of up to 1.5mum/min result. By placing two MEMS structures in close proximity, 4--10mum apart, localized silicon nanowire growth can be used to link together MEMS structures to yield a two-terminal, self-assembled micro-to-nano system. Here, one MEMS structure is designated as the hot growth structure while a nearby structure is designated as the cold secondary structure, whose role is to provide a natural stopping point for the VLS reaction. The application of a localized electric-field, 5 to 13V/mum in strength, during the synthesis process, has been shown to improve nanowire organization, alignment, and assembly. The integrated nanoelectrormechanical system was found to be mechanically resilient as it proved to successfully withstand a wide variety of post-processing steps, including manipulations and examinations under scanning and transmission electron microscopes and aqueous processing, although a super critical drying step is necessary to preserve the integrated system during the drying process. Electrical characterization of the system proved challenging due to low carrier concentration and possible transport issues at the nano-micro interface. Nonetheless, in a proof-of-concept demonstration, the system was functionalized and tested for a hydrogen sensing application.

Characterization of memory and measurement history in photoconductivity of nanocrystal arrays

NASA Astrophysics Data System (ADS)

Fairfield, Jessamyn A.; Dadosh, Tali; Drndic, Marija

2010-10-01

Photoconductivity in nanocrystal films has been previously characterized, but memory effects have received little attention despite their importance for device applications. We show that the magnitude and temperature dependence of the photocurrent in CdSe/ZnS core-shell nanocrystal arrays depends on the illumination and electric field history. Changes in photoconductivity occur on a few-hour timescale, and subband gap illumination of nanocrystals prior to measurements modifies the photocurrent more than band gap illumination. The observed effects can be explained by charge traps within the band gap that are filled or emptied, which may alter nonradiative recombination processes and affect photocurrent.

Preparation and characterization of MWCNT nanofiller incorporated polymer composite for lithium battery applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pradeepa, P.; Raj, S. Edwin; Selvakumar, K.

Poly (ethyl methacrylate) based polymer electrolyte films were prepared by solution casting technique incorporating multi-walled carbon nanotube (MWCNT) as filler and characterized using XRD and Ac impedance analysis. The electrical conductivity is increased with increasing filler concentration (upto 6wt %), which is attributed to the formation of charge transfer complexes. The maximum ionic conductivity value is found to be 1.171×10{sup −3} Scm{sup −1} at 303K for PEMA (19wt %) -LiClO{sub 4} (8wt %) -MWCNT (6wt %) -PC (67wt %) electrolyte system. The temperature dependent ionic conductivity plot seems to obey Vogel -Tamman-Fulcher relation.

Effect of thermal implying during ageing process of nanorods growth on the properties of zinc oxide nanorod arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com; Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, M., E-mail: rusop@salam.uitm.my

Undoped and Sn-doped Zinc oxide (ZnO) nanostructures have been fabricated using a simple sol-gel immersion method at 95°C of growth temperature. Thermal sourced by hot plate stirrer was supplied to the solution during ageing process of nanorods growth. The results showed significant decrement in the quality of layer produced after the immersion process where the conductivity and porosity of the samples reduced significantly due to the thermal appliance. The structural properties of the samples have been characterized using field emission scanning electron microscopy (FESEM) electrical properties has been characterized using current voltage (I-V) measurement.