Cryogenic electrical properties of irradiated cyanate ester/epoxy insulation for fusion magnets

NASA Astrophysics Data System (ADS)

Li, X.; Wu, Z. X.; Li, J.; Xu, D.; Liu, H. M.; Huang, R. J.; Li, L. F.

2017-12-01

The insulation materials used in high field fusion magnets require excellent mechanical properties, high electrical breakdown strength, good thermal conductivity and high radiation tolerance. Previous investigations showed that cyanate ester/epoxy (CE/EP) insulation material, a candidate insulation for fusion magnets, can maintain good mechanical performance at cryogenic temperature after 10 MGy irradiation and has a much longer pot life than traditional epoxy insulation material. In order to quantify the electrical properties of the CE/EP insulation material at low temperature, a cryogenic electrical property testing system cooled by a G-M cryocooler was developed for this study. An insulation material with 40% cyanate ester and 60% epoxy was subjected to 60Co γ-ray irradiation in air at ambient temperature with a dose rate of 300 Gy/min, and total doses of 1 MGy, 5 MGy and 10 MGy. The electrical breakdown strength of this CE/EP insulation material was measured before and after irradiation. The results show that cryogenic temperature has a positive effect on the electrical breakdown strength of this composite, while the influence of 60Co γ-ray irradiation is not obvious at 6.1 K.

Thermophysical Properties of Five Industrial Steels in the Solid and Liquid Phase

NASA Astrophysics Data System (ADS)

Wilthan, B.; Schützenhöfer, W.; Pottlacher, G.

2017-07-01

The need for characterization of thermophysical properties of steel was addressed in the FFG-Bridge Project 810999 in cooperation with our partner from industry, Böhler Edelstahl GmbH & Co KG. To optimize numerical simulations of production processes such as plastic deformation or remelting, additional and more accurate thermophysical property data were necessary for the group of steels under investigation. With the fast ohmic pulse heating circuit system and a commercial high-temperature Differential Scanning Calorimeter at Graz University of Technology, we were able to measure the temperature-dependent specific electrical resistivity and specific enthalpy for a set of five high alloyed steels: E105, M314, M315, P800, and V320 from room temperature up into the liquid phase. The mechanical properties of those steels make sample preparation an additional challenge. The described experimental approach typically uses electrically conducting wire-shaped specimen with a melting point high enough for the implemented pyrometric temperature measurement. The samples investigated here are too brittle to be drawn as wires and could only be cut into rectangular specimen by Electrical Discharge Machining. Even for those samples all electrical signals and the temperature signal can be recorded with proper alignment of the pyrometer. For each material under investigation, a set of data including chemical composition, solidus and liquidus temperature, enthalpy, electrical resistivity, and thermal diffusivity as a function of temperature will be reported.

Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature

NASA Astrophysics Data System (ADS)

Yıldırım, M.; Şahin, C.; Altındal, Ş.; Durmuş, P.

2017-03-01

An Au/Bi4Ti3O12/ n-Si Schottky barrier diode (SBD) was fabricated with a 51 nm Bi4Ti3O12 interfacial layer. Admittance measurements of the fabricated SBD were carried out in the bias voltage ( V) range of -4 V and 6 V. Capacitance ( C) and conductance ( G/ω) measurements were carried out in a wide temperature range of 120-380 K so that temperature effects on electrical and dielectric properties of the SBD were investigated. Main electrical parameters were extracted from reverse bias C -2- V plots. It was found that variance of electrical and dielectric parameters of the SBD with temperature is basically different for low and high temperature regions. A fair number (˜1012 eV-1 cm-2) was obtained for surface states ( N ss); however, N ss first decreased then increased with temperature. This result was associated with increased defects with temperature and higher activation energy in the high temperature region. Dielectric parameters of the SBD were also extracted and the dielectric constant of SBD was found as ˜10 at room temperature. Application of modulus formalism to the admittance data revealed temperature-activated dielectric relaxation at 340 K. Results showed that the temperature has considerable effects on electrical and dielectric properties of Au/Bi4Ti3O12/ n-Si SBD.

The electrical properties and glass transition of some dental materials after temperature exposure.

PubMed

Marcinkowska, Agnieszka; Gauza-Wlodarczyk, Marlena; Kubisz, Leszek; Hedzelek, Wieslaw

2017-10-17

The physicochemical properties of dental materials will remain stable only when these materials in question are resistant to the changes in the oral cavity. The oral environment is subject to large temperature variations. The aim of the study was the assessment of electrical properties and glass transition of some dental materials after temperature exposure. Composite materials, compomers, materials for temporary prosthetic replacement and resin-based pit and fissure sealants were used in the study. The method used was electric conductivity of materials under changing temperature. The order of materials presenting the best characteristics for insulators was as follows: materials for temporary prosthetic replacement, resin-based pit and fissure sealants, composites, and compomers. Thanks to comparisons made between graphs during I and II heating run, the method could be used to observe changes in the heated material and determine whether the changes observed are reversible or permanent. The graphs also provided temperature values which contain information on glass transition during heating. In the oral cavity the effect of the constant temperature stimulus influences maturity of dental materials and improves their properties. But high temperatures over glass transition temperature can cause irreversible deformation and changes of the materials properties, even in a short time.

The electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures

NASA Astrophysics Data System (ADS)

Karabulut, Abdulkerim; Türüt, Abdulmecit; Karataş, Şükrü

2018-04-01

In this work, temperature dependent electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures were investigated using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in the temperature range of 60-320 K by steps of 20 K at 1 MHz. The dielectric constant (ε‧), dielectric loss (ε″), dielectric loss tangent (tanδ) and ac electrical conductivities (σac) have been calculated as a function of temperature. These values of the ε‧, ε″, tanδ and σac have been found to be 2.272, 5.981, 2.631 and 3.32 × 10-6 (Ω-1cm-1) at 80 K, respectively, 1.779, 2.315, 1.301 and 1.28 × 10-6 (Ω-1cm-1), respectively at 320 K. These decrease of the dielectric parameters (ε‧, ε″, tanδ and σac) have been observed at high temperatures. The experimental results show that electrical and dielectric properties are strongly temperature and bias voltage dependent.

Temperature dependences of the electromechanical and electrocaloric properties of Ba(Zr,Ti)O3 and (Ba,Sr)TiO3 ceramics

NASA Astrophysics Data System (ADS)

Maiwa, Hiroshi

2017-10-01

The electrocaloric properties of Ba(Zr,Ti)O3 and (Ba,Sr)TiO3 ceramics (BZT and BST, respectively) were investigated by the indirect estimation and direct measurement of temperature-electric field (T-E) hysteresis loops. The measured T-E loops had shapes similar to those of the strain-electric field (s-E) loops. The measured temperature changes (ΔTs) at around 30 °C of the BZT ceramics sintered at 1450 °C and BST ceramics sintered at 1600 °C upon the release of the electric field from 30 kV/cm to 0 were 0.34 and 0.57 K, respectively. The temperature dependences of the electromechanical and electrocaloric properties were investigated. The BZT ceramics sintered at 1450 °C exhibited the largest electromechanical and electrocaloric properties at around 30 °C, which corresponds to the phase transition temperature. BST is more temperature dependent than BZT. BST ceramics sintered at 1600 °C exhibited the largest electromechanical and electrocaloric properties at around 29 °C, which is about 10 °C higher than the phase transition temperature.

The electrical transport properties of liquid Rb using pseudopotential theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, A. B., E-mail: amit07patel@gmail.com; Bhatt, N. K., E-mail: amit07patel@gmail.com; Thakore, B. Y., E-mail: amit07patel@gmail.com

2014-04-24

Certain electric transport properties of liquid Rb are reported. The electrical resistivity is calculated by using the self-consistent approximation as suggested by Ferraz and March. The pseudopotential due to Hasegawa et al for full electron-ion interaction, which is valid for all electrons and contains the repulsive delta function due to achieve the necessary s-pseudisation was used for the calculation. Temperature dependence of structure factor is considered through temperature dependent potential parameter in the pair potential. Finally, thermo-electric power and thermal conductivity are obtained. The outcome of the present study is discussed in light of other such results, and confirms themore » applicability of pseudopotential at very high temperature via temperature dependent pair potential.« less

Ba doped Fe3O4 nanocrystals: Magnetic field and temperature tuning dielectric and electrical transport

NASA Astrophysics Data System (ADS)

Dutta, Papia; Mandal, S. K.; Nath, A.

2018-05-01

Nanocrystalline BaFe2O4 has been prepared through low temperature pyrophoric reaction method. The structural, dielectric and electrical transport properties of BaFe2O4 are investigated in detail. AC electrical properties have been studied over the wide range of frequencies with applied dc magnetic fields and temperatures. The value of impedance is found to increase with increase in magnetic field attributing the magnetostriction property of the sample. The observed value of magneto-impedance and magnetodielectric is found to ∼32% and ∼33% at room temperature. Nyquist plots have been fitted using resistance-capacitor circuits at different magnetic fields and temperatures showing the dominant role of grain and grain boundaries of the sample. Metal-semiconductor transition ∼403 K has been discussed in terms of delocalized and localized charge carrier.We have estimated activation energy using Arrhenius relation indicating temperature dependent electrical relaxation process in the system. Ac conductivity follow a Jonscher’s single power law indicating the large and small polaronic hopping conduction mechanism in the system.

Frequency and temperature dependence of dielectric and ac electrical properties of NiFe2O4-ZnO multiferroic nanocomposite

NASA Astrophysics Data System (ADS)

Dutta, Papia; Mandal, S. K.; Dey, P.; Nath, A.

2018-04-01

We have presented the ac electrical properties and dielectric studies of 0.5 NiFe2O4 - 0.5 ZnO multiferroic nanocomposites prepared through low temperature "pyrophoric reaction process". Structural characterization has been carried out through X-ray diffraction technique, which shows the co-existence of both the phases of the nanocomposites. The ac electrical properties of nanocomposites have been studied employing impedance spectroscopy technique. The impedance value is found to increase with increase in magnetic field attributing the magnetostriction property of the composites. Dielectric constant is found to decrease with both the increase in magnetic fields and temperatures. Studies of dielectric constant reveal the Maxwell Wagner interfacial polarization at low frequency regime. Relaxation frequency as a function of magnetic fields and temperatures is found to shift towards the high frequency region.

Influence of processing history on the mechanical properties and electrical resistivity of polycarbonate - multi-walled carbon nanotubes nanocomposites

NASA Astrophysics Data System (ADS)

Choong, Gabriel Y. H.; De Focatiis, Davide S. A.

2015-05-01

In this work we investigate the effects of compounding temperature and secondary melt processing on the mechanical response and electrical behaviour of polycarbonate filled with 3 wt% carbon nanotubes. The nanocomposites were melt compounded in an industrial setting at a range of temperatures, and subsequently injection moulded or compression moulded. The surface hardness, uniaxial tensile properties and electrical resistivity were measured. Secondary melt processing is found to be the dominant process in determining the final mechanical properties and resistivity of these materials.

Microwave processed NiMg ferrite: Studies on structural and magnetic properties

NASA Astrophysics Data System (ADS)

Chandra Babu Naidu, K.; Madhuri, W.

2016-12-01

Ferrites are magnetic semiconductors realizing an important role in electrical and electronic circuits where electrical and magnetic property coupling is required. Though ferrite materials are known for a long time, there is a large scope in the improvement of their properties (vice sintering and frequency dependence of electrical and magnetic properties) with the current technological trends. Forth coming technology is aimed at miniaturization and smart gadgets, electrical components like inductors and transformers cannot be included in integrated circuits. These components are incorporated into the circuit as surface mount devices whose fabrication involves low temperature co-firing of ceramics and microwave monolithic integrated circuits technologies. These technologies demand low temperature sinter-ability of ferrites. This article presents low temperature microwave sintered Ni-Mg ferrites of general chemical formula Ni1-xMgxFe2O4 (x=0, 0.2, 0.4, 0.5, 0.6, 0.8, 1) for potential applications as transformer core materials. The series of ferrites are characterized using X-ray diffractometer, scanning electron microscopy, Fourier transform infrared and vibrating sample magnetometer for investigating structural, morphological and magnetic properties respectively. The initial permeability is studied with magnesium content, temperature and frequency in the temperature range of 308 K-873 K and 42 Hz-5 MHz.

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

NASA Astrophysics Data System (ADS)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2013-07-01

Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

Improved high modulus carbon fibers. [elimination of hazards due to electrical properties

NASA Technical Reports Server (NTRS)

Ansell, G. S.; Chen, S. H.; Diffendorf, R. J.; Kim, C. M.; Lemaistre, C. W.; Lyman, C. E.; Shen, T. H.; Wang, J. J. H.

1979-01-01

Carbon fibers which are electrically insulating but still maintain the mechanical properties of the original carbon fibers were investigated. Three approaches were taken to increase the electrical resistance of carbon fibers: (1) boron nitride (BN) coatings; (2) doping of carbon fibers to alter their electrical properties; and (3) low temperature final heat treatment. The structure of carbon fibers and its effect upon properties was also studied. Results are presented.

Temperature Modulation of Electric Fields in Biological Matter

PubMed Central

Daniels, Charlotte S.; Rubinsky, Boris

2011-01-01

Pulsed electric fields (PEF) have become an important minimally invasive surgical technology for various applications including genetic engineering, electrochemotherapy and tissue ablation. This study explores the hypothesis that temperature dependent electrical parameters of tissue can be used to modulate the outcome of PEF protocols, providing a new means for controlling and optimizing this minimally invasive surgical procedure. This study investigates two different applications of cooling temperatures applied during PEF. The first case utilizes an electrode which simultaneously delivers pulsed electric fields and cooling temperatures. The subsequent results demonstrate that changes in electrical properties due to temperature produced by this configuration can substantially magnify and confine the electric fields in the cooled regions while almost eliminating electric fields in surrounding regions. This method can be used to increase precision in the PEF procedure, and eliminate muscle contractions and damage to adjacent tissues. The second configuration considered introduces a third probe that is not electrically active and only applies cooling boundary conditions. This second study demonstrates that in this probe configuration the temperature induced changes in electrical properties of tissue substantially reduce the electric fields in the cooled regions. This novel treatment can potentially be used to protect sensitive tissues from the effect of the PEF. Perhaps the most important conclusion of this investigation is that temperature is a powerful and accessible mechanism to modulate and control electric fields in biological tissues and can therefore be used to optimize and control PEF treatments. PMID:21695144

Local electrical properties of thermally grown oxide films formed on duplex stainless steel surfaces

NASA Astrophysics Data System (ADS)

Guo, L. Q.; Yang, B. J.; He, J. Y.; Qiao, L. J.

2018-06-01

The local electrical properties of thermally grown oxide films formed on ferrite and austenite surfaces of duplex stainless steel at different temperatures were investigated by Current sensing atomic force microscopy, X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The current maps and XPS/AES analyses show that the oxide films covering austenite and ferrite surfaces formed at different temperatures exhibit different local electrical characteristics, thickness and composition. The dependence of electrical conductivity of oxide films covering austenite and ferrite surface on the formation temperature is attributed to the film thickness and semiconducting structures, which is intrinsically related to thermodynamics and kinetics process of film grown at different temperature. This is well elucidated by corresponding semiconductor band structures of oxide films formed on austenite and ferrite phases at different temperature.

Sintering temperature effect on electrical and thermal properties of Zn1-xAlxO as thermoelectric material candidate

NASA Astrophysics Data System (ADS)

Fajarin, Rindang; Rahel, Amelthia; Widyastuti

2018-04-01

Thermoelectric is a device to convert residual heat energy into electricity. Electrical and thermal properties of constituent material determine thermoelectric efficiency. One of metal oxides, namely zinc oxide (ZnO), is highly stable in a large temperature range, non-toxic, low cost and eco-friendly, has potential application as thermoelectric at high temperature. The aims of this study are to synthesize Zn0.98Al0.02O by coprecipitation method using ZnO and Al2O3 powders as raw materials, and to investigate the effect of sintering temperatures (at 700, 800, 900, and 950°C) on the electrical and thermal properties of the material. The sample products were analyzed by x-ray diffraction (XRD), scanning electron microscope (SEM), and energy dispersive x-ray (EDX) measurements to identify phase content, to observe particle morphology and to analyze distribution of elements in the sample, respectively. LCR meter was conducted to study electrical measurements of the samples. Further, thermal properties of the samples were analyzed by TGA measurements. The data show that Al3+ ions have been successfully doped into ZnO crystal lattice and they tend to increase the electrical conductivity of the samples. The sintered Zn0.98Al0.02O sample at 900°C has the highest conductivity value (4.53 × 10-4 S/m) compared to the others. It is relatively stable at high temperature, and thus, it can be used as one promising candidate for thermoelectric material at high temperature.

Polyimide/Glass Composite High-Temperature Insulation

NASA Technical Reports Server (NTRS)

Pater, Ruth H.; Vasquez, Peter; Chatlin, Richard L.; Smith, Donald L.; Skalski, Thomas J.; Johnson, Gary S.; Chu, Sang-Hyon

2009-01-01

Lightweight composites of RP46 polyimide and glass fibers have been found to be useful as extraordinarily fire-resistant electrical-insulation materials. RP46 is a polyimide of the polymerization of monomeric reactants (PMR) type, developed by NASA Langley Research Center. RP46 has properties that make it attractive for use in electrical insulation at high temperatures. These properties include high-temperature resistance, low relative permittivity, low dissipation factor, outstanding mechanical properties, and excellent resistance to moisture and chemicals. Moreover, RP46 contains no halogen or other toxic materials and when burned it does not produce toxic fume or gaseous materials. The U. S. Navy has been seeking lightweight, high-temperature-resistant electrical-insulation materials in a program directed toward reducing fire hazards and weights in ship electrical systems. To satisfy the requirements of this program, an electrical-insulation material must withstand a 3-hour gas-flame test at 1,600 F (about 871 C). Prior to the development reported here, RP46 was rated for use at temperatures from -150 to +700 F (about -101 to 371 C), and no polymeric product - not even RP46 - was expected to withstand the Navy 3-hour gas-flame test.

Influence of Microstructure on the Electrical Properties of Heteroepitaxial TiN Films

NASA Astrophysics Data System (ADS)

Xiang, Wenfeng; Liu, Yuan; Zhang, Jiaqi

2018-05-01

Heteroepitaxial TiN films were deposited on Si substrates by pulse laser deposition at different substrate temperature. The microstructure and surface morphology of the films were investigated by X-ray diffraction (θ-2θ scan, ω-scan, and ϕ-scan) and atomic force microscopy. The electrical properties of the prepared TiN films were studied using a physical property measurement system. The experimental results showed that the crystallinity and surface morphology of the TiN films were improved gradually with increasing substrate temperature below 700 °C. Specially, single crystal TiN films were prepared when substrate temperature is above 700 °C; However, the quality of TiN films gradually worsened when the substrate temperature was increased further. The electrical properties of the films were directly correlated to their crystalline quality. At the optimal substrate temperature of 700 °C, the TiN films exhibited the lowest resistivity and highest mobility of 25.7 μΩ cm and 36.1 cm2/V s, respectively. In addition, the mechanism concerning the influence of substrate temperature on the microstructure of TiN films is discussed in detail.

Electrical characterization of glass, teflon, and tantalum capacitors at high temperatures

NASA Technical Reports Server (NTRS)

Hammoud, A. N.; Baumann, E. D.; Myers, I. T.; Overton, E.

1991-01-01

Dielectric materials and electrical components and devices employed in radiation fields and the space environment are often exposed to elevated temperatures among other things. Therefore, these systems must withstand the high temperature exposure while still providing good electrical and other functional properties. Experiments were carried out to evaluate glass, teflon, and tantalum capacitors for potential use in high temperature applications. The capacitors were characterized in terms of their capacitance and dielectric loss as a function of temperature up to 200 C. At a given temperature, these properties were obtained in a frequency range of 50 Hz to 100 kHz. The DC leakage current measurements were also performed in a temperature range from 20 to 200 C. The obtained results are discussed and conclusions are made concerning the suitability of the capacitors investigated for high temperature applications.

Bio-heat transfer model of electroconvulsive therapy: Effect of biological properties on induced temperature variation.

PubMed

de Oliveira, Marilia M; Wen, Paul; Ahfock, Tony

2016-08-01

A realistic human head model consisting of six tissue layers was modelled to investigate the behavior of temperature profile and magnitude when applying electroconvulsive therapy stimulation and different biological properties. The thermo-electrical model was constructed with the use of bio-heat transfer equation and Laplace equation. Three different electrode montages were analyzed as well as the influence of blood perfusion, metabolic heat and electric and thermal conductivity in the scalp. Also, the effect of including the fat layer was investigated. The results showed that temperature increase is inversely proportional to electrical and thermal conductivity increase. Furthermore, the inclusion of blood perfusion slightly drops the peak temperature. Finally, the inclusion of fat is highly recommended in order to acquire more realistic results from the thermo-electrical models.

Temperature dependent electrical properties of polyaniline film grown on paper through aniline vapor polymerization

NASA Astrophysics Data System (ADS)

Deb, K.; Bhowmik, K. L.; Bera, A.; Chattopadhyay, K. K.; Saha, B.

2016-05-01

Polyaniline thin film has been prepared on paper by aniline vapor deposition technique. Ferric chloride has been used as polymerizing agent in this approach. The prepared films were studied through electrical resistivity and optical properties measurements. The electrical resistivity of the polyaniline film shows significant temperature dependence. The resistance sharply falls with the increase in temperature. The optical absorbance measurements shows characteristics absorbance peak indicating the formation of conducting emeraldine salt form of polyaniline. The optical energy band gap of the film was calculated from the transmittance spectra. The optical energy band gap and electrical conductivity of the polyaniline film is well suited for their applications in electronic devices.

Influence of the sintering temperature on the electrical properties of Ce-doped WO3 ceramics prepared from nano-powders

NASA Astrophysics Data System (ADS)

Dong, Liang; Chen, Han-Jun; Wang, Yu; Li, De-Zhu; Li, Tong-Ye; Zhao, Yong

2007-04-01

Using a nm-level powder fabricated by a wet chemical method as precursor, the CeO2-doped WO3 ceramics were prepared by the conventional solid state reaction at sintering temperatures from 600 to 1100 °C. The x-ray diffraction analysis reveals the coexistence of different WO3 phases in the samples sintered at temperatures below 900 °C, whereas a single phase appears in the samples sintered above 1000 °C. No new Ce-W compound appears. As the sintering temperature increases, the electrical properties of the samples display an interesting transformation from linear to nonlinear behaviour. The measurements of scanning electron microscope, complex impedance and electrical stability indicate that a lot of grain boundary regions in the samples sintered at low temperatures strongly influences the electrical transportation. Therefore, the electrical nonlinearity is due to a basic process controlled by the back-to-back Schottky barriers at grain boundaries with suitable thickness as well as the coexistence of phases.

Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperatures

NASA Astrophysics Data System (ADS)

Thiery, N.; Naletov, V. V.; Vila, L.; Marty, A.; Brenac, A.; Jacquot, J.-F.; de Loubens, G.; Viret, M.; Anane, A.; Cros, V.; Ben Youssef, J.; Beaulieu, N.; Demidov, V. E.; Divinskiy, B.; Demokritov, S. O.; Klein, O.

2018-02-01

We report a study on the electrical properties of 19-nm-thick yttrium iron garnet (YIG) films grown by liquid phase epitaxy on gadolinium gallium garnet single crystal. The electrical conductivity and Hall coefficient are measured in the high-temperature range [300,400] K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band gap of Eg≈2 eV. It drops to values about 5 ×103Ω cm at T =400 K, thus indicating that epitaxial YIG ultrathin films behave as large gap semiconductors. We also infer the Hall mobility, which is found to be positive (p type) at 5 cm2V-1sec-1 and almost independent of temperature. We discuss the consequence for nonlocal spin transport experiments performed on YIG at room temperature and demonstrate the existence of electrical offset voltages to be disentangled from pure spin effects.

Enhanced mechanical, thermal, and electric properties of graphene aerogels via supercritical ethanol drying and high-temperature thermal reduction.

PubMed

Cheng, Yehong; Zhou, Shanbao; Hu, Ping; Zhao, Guangdong; Li, Yongxia; Zhang, Xinghong; Han, Wenbo

2017-05-03

Graphene aerogels with high surface areas, ultra-low densities and thermal conductivities have been prepared to exploit their wide applications from pollution adsorption to energy storage, supercapacitor, and thermal insulation. However, the low mechanical properties, poor thermal stability and electric conductivity restrict these aerogels' applications. In this paper, we prepared mechanically strong graphene aerogels with large BET surface areas, low thermal conductivities, high thermal stability and electric conductivities via hydrothermal reduction and supercritical ethanol drying. Annealing at 1500 °C resulted in slightly increased thermal conductivity and further improvement in mechanical properties, oxidation temperature and electric conductivity of the graphene aerogel. The large BET surface areas, together with strong mechanical properties, low thermal conductivities, high thermal stability and electrical conductivities made these graphene aerogels feasible candidates for use in a number of fields covering from batteries to sensors, electrodes, lightweight conductor and insulation materials.

Temperature and electric-field induced phase transition behavior and electrical properties of [001]-oriented 0.23Pb(In1/2Nb1/2)O3-0.47Pb(Mg1/3Nb2/3)O3-0.3PbTiO3-Mn single crystals

NASA Astrophysics Data System (ADS)

Zhang, Zhang; Chen, Jianwei; Xu, Jialin; Li, Xiaobing; Luo, Haosu

2017-12-01

The temperature and electric-field induced phase transition behavior and dielectric, piezoelectric, and ferroelectric properties of [001]-oriented 0.23Pb(In1/2Nb1/2)O3-0.47Pb(Mg1/3Nb2/3)O3-0.3PbTiO3-Mn (PIMNT-Mn) single crystals were investigated. Dielectric performance analysis and temperature-dependent Raman spectra show three apparent ferroelectric phase transition temperatures around 120 °C(TR-M),145 °C(TM-T), and 170 °C(TT-C), respectively. In addition, the temperature dependence of the relative Raman intensities of Lorentzian peaks indicates the poled PIMNT-Mn single crystals exhibit rhombohedral(R) → monoclinic(M) → tetragonal(T) → cubic(C) phase transition path. The electrical properties of the PIMNT-Mn single crystals such as the longitudinal electrostrictive coefficient (Q), the converse piezoelectric constant (d33), and the maximum strain value (Smax%) have changed abnormally around the phase transition temperatures (TR-M and TM-T).

Specialized mechanical properties of pure aluminum by using non-equal channel angular pressing for developing its electrical applications

NASA Astrophysics Data System (ADS)

Fereshteh-Saniee, Faramarz; Asgari, Mohammad; Fakhar, Naeimeh

2016-08-01

Despite valuable electrical characteristics, the use of pure aluminum in different applications has been limited due to its low strength. Non-equal channel angular pressing (NECAP) is a recently proposed severe plastic deformation process with greater induced plastic strain and, consequently, better grain refinement in the product, compared with the well-known equal channel angular pressing technique. This research is concerned with the effects of the process temperature and ram velocity on the mechanical, workability and electrical properties of AA1060 aluminum alloy. Increasing the process temperature can concurrently increase the workability, ductility and electrical conductivity, while it has a reverse influence on the strength of the NECAPed specimen, although the strengths of all the products are higher than the as-received alloy. The influence of the ram speed on the mechanical properties of the processed samples is lower than the process temperature. Finally, a compromised process condition is introduced in order to attain a good combination of workability and strength with well-preserved electrical conductivity for electrical applications of components made of pure aluminum.

Physical properties of Ce-TZP at cryogenic temperature

NASA Astrophysics Data System (ADS)

Han, Y. M.; Chen, Z.; Zhou, M.; Huang, R. J.; Huang, C. J.; Li, L. F.

2014-01-01

Electrical insulators, which are used to insulate cryogenic supply lines and conductor windings, are critical units in superconducting TOKAMAK magnets. Electrical insulators used in superconducting magnets fall into axial and radial insulators. These insulators can be made from glass ribbon epoxy densification and have been used in the Experiment Advanced Superconducting Tokamak (EAST). The properties of Ce-TZP can satisfy the requirement of electrical insulators. In this paper, thermal conductivity, mechanical properties and coefficient of thermal expansion of Ce-TZP have been investigated at cryogenic temperatures. Results indicate that the Ce-TZP shows better properties than epoxy and it demonstrates that the Ce-TZP can be used as insulation material in superconducting magnets.

Fabrication of electrically bistable organic semiconducting/ferroelectric blend films by temperature controlled spin coating.

PubMed

Hu, Jinghang; Zhang, Jianchi; Fu, Zongyuan; Weng, Junhui; Chen, Weibo; Ding, Shijin; Jiang, Yulong; Zhu, Guodong

2015-03-25

Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. During film deposition from the blend solution, spinodal decomposition induced phase separation, resulting in discrete semiconducting phase whose electrical property could be modulated by the continuous ferroelectric phase. However, blend films processed by common spin coating method showed extremely rough surfaces, even comparable to the film thickness, which caused large electrical leakage and thus compromised the resistive switching performance. To improve film roughness and thus increase the productivity of these resistive devices, we developed temperature controlled spin coating technique to carefully adjust the phase separation process. Here we reported our experimental results from the blend films of ferroelectric poly(vinylidene fluoride-trifluoroethylene (P(VDF-TrFE)) and semiconducting poly(3-hexylthiophene) (P3HT). We conducted a series of experiments at various deposition temperatures ranging from 20 to 90 °C. The resulting films were characterized by AFM, SEM, and VPFM to determine their structure and roughness. Film roughness first decreased and then increased with the increase of deposition temperature. Electrical performance was also characterized and obviously improved insulating property was obtained from the films deposited between 50 and 70 °C. By temperature control during film deposition, it is convenient to efficiently fabricate ferroelectric/semiconducting blend films with good electrical bistability.

Temperature dependent electrical properties of polyaniline film grown on paper through aniline vapor polymerization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deb, K.; Bera, A.; Saha, B., E-mail: biswajit.physics@gmail.com

2016-05-23

Polyaniline thin film has been prepared on paper by aniline vapor deposition technique. Ferric chloride has been used as polymerizing agent in this approach. The prepared films were studied through electrical resistivity and optical properties measurements. The electrical resistivity of the polyaniline film shows significant temperature dependence. The resistance sharply falls with the increase in temperature. The optical absorbance measurements shows characteristics absorbance peak indicating the formation of conducting emeraldine salt form of polyaniline. The optical energy band gap of the film was calculated from the transmittance spectra. The optical energy band gap and electrical conductivity of the polyaniline filmmore » is well suited for their applications in electronic devices.« less

Thermophysical Properties of Liquid Te: Density, Electrical Conductivity, and Viscosity

NASA Technical Reports Server (NTRS)

Li, C.; Su, C.; Lehoczky, S. L.; Scripa, R. N.; Ban, H.; Lin, B.

2004-01-01

The thermophysical properties of liquid Te, namely, density, electrical conductivity, and viscosity, were determined using the pycnometric and transient torque methods from the melting point of Te (723 K) to approximately 1150 K. A maximum was observed in the density of liquid Te as the temperature was increased. The electrical conductivity of liquid Te increased to a constant value of 2.89 x 10(exp 5 OMEGA-1m-1) as the temperature was raised above 1000 K. The viscosity decreased rapidly upon heating the liquid to elevated temperatures. The anomalous behaviors of the measured properties are explained as caused by the structural transitions in the liquid and discussed in terms of Eyring's and Bachiskii's predicted behaviors for homogeneous liquids. The Properties were also measured as a function of time after the liquid was coded from approximately 1173 or 1123 to 823 K. No relaxation phenomena were observed in the properties after the temperature of liquid Te was decreased to 823 K, in contrast to the relaxation behavior observed for some of the Te compounds.

Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor Melts

NASA Technical Reports Server (NTRS)

Li, C.; Ban, H.; Lin, B.; Scripa, R. N.; Su, C.-H.; Lehoczky, S. L.

2004-01-01

The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.

Effect of rapid thermal annealing on the electrical, optical and structural properties of ZnO-doped In2O3 films grown by linear facing target sputtering.

PubMed

Cho, Chung-Ki; Kim, Han-Ki

2012-04-01

We investigated the effect of rapid thermal annealing on the electrical, optical, and structural properties of ZnO-doped In2O3 (ZIO) films grown at different Ar/O2 flow ratios (15/0 and 15/1 sccm) by using linear facing target sputtering. It was found that the ZIO films grown at different Ar/O2, flow ratios showed different electrical and optical behavior with increasing rapid thermal annealing temperature. Synchrotron X-ray scattering examination showed that the different electrical and optical properties of the ZIO films could be attributed to the difference in preferred orientation with an increase in rapid thermal annealing temperature.

Correlation of Critical Temperatures and Electrical Properties in Titanium Films

NASA Astrophysics Data System (ADS)

Gandini, C.; Lacquaniti, V.; Monticone, E.; Portesi, C.; Rajteri, M.; Rastello, M. L.; Pasca, E.; Ventura, G.

Recently transition-edge sensors (TES) have obtained an increasing interest as light detectors due to their high energy resolution and broadband response. Titanium (Ti), with transition temperature up to 0.5 K, is among the suitable materials for TES application. In this work we investigate Ti films obtained from two materials of different purity deposited by e-gun on silicon nitride. Films with different thickness and deposition substrate temperature have been measured. Critical temperatures, electrical resistivities and structural properties obtained from x-ray are related to each other.

Experimental and theoretical investigation of temperature-dependent electrical fatigue studies on 1-3 type piezocomposites

NASA Astrophysics Data System (ADS)

Mohan, Y.; Arockiarajan, A.

2016-03-01

1-3 type piezocomposites are very attractive materials for transducers and biomedical application, due to its high electromechanical coupling effects. Reliability study on 1-3 piezocomposites subjected to cyclic loading condition in transducer application is one of the primary concern. Hence, this study focuses on 1-3 piezocomposites for various PZT5A1 fiber volume fraction subjected to electrical fatigue loading up-to 106 cycles and at various elevated temperature. Initially experiments are performed on 1-3 piezocomposites, in order to understand the degradation phenomena due to various range in amplitude of electric fields (unipolar & bipolar), frequency of applied electric field and for various ambient temperature. Performing experiments for high cycle fatigue and for different fiber volume fraction of PZT5A1 is a time consuming process. Hence, a simplified macroscopic uni-axial model based on physical mechanisms of domain switching and continuum damage mechanics has been developed to predict the non-linear fatigue behaviour of 1-3 piezocomposites for temperature dependent electrical fatigue loading conditions. In this model, damage effects namely domain pinning, frozen domains and micro cracks, are considered as a damage variable (ω). Remnant variables and material properties are considered as a function of internal damage variable and the growth of the damage is derived empirically based on the experimental observation to predict the macroscopic changes in the properties. The measured material properties and dielectric hysteresis (electric displacement vs. electric field) as well as butterfly curves (longitudinal strain vs. electric field) are compared with the simulated results. It is observed that variation in amplitude of bipolar electric field and temperature has a strong influence on the response of 1-3 piezocomposites.

Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications

NASA Astrophysics Data System (ADS)

Ali, H. M.; Abd El-Raheem, M. M.; Megahed, N. M.; Mohamed, H. A.

2006-08-01

Aluminum-doped zinc oxide (AZO) thin films have been deposited by electron beam evaporation technique on glass substrates. The structural, electrical and optical properties of AZO films have been investigated as a function of annealing temperature. It was observed that the optical properties such as transmittance, reflectance, optical band gap and refractive index of AZO films were strongly affected by annealing temperature. The transmittance values of 84% in the visible region and 97% in the NIR region were obtained for AZO film annealed at 475 °C. The room temperature electrical resistivity of 4.6×10-3 Ω cm has been obtained at the same temperature of annealing. It was found that the calculated refractive index has been affected by the packing density of the thin films, whereas, the high annealing temperature gave rise to improve the homogeneity of the films. The single-oscillator model was used to analyze the optical parameters such as the oscillator and dispersion energies.

Correlation between surface morphology and electrical properties of VO2 films grown by direct thermal oxidation method

NASA Astrophysics Data System (ADS)

Yoon, Joonseok; Park, Changwoo; Park, Sungkyun; Mun, Bongjin Simon; Ju, Honglyoul

2015-10-01

We investigate surface morphology and electrical properties of VO2 films fabricated by direct thermal oxidation method. The VO2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 104, and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO2 films reveals that the transport properties of VO2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

Au doping effects on electrical and optical properties of vanadium dioxides

NASA Astrophysics Data System (ADS)

Zhu, YaBin; He, Fan; Na, Jie

2012-03-01

Vanadium dioxides were fabricated on normal glass substrates using reactive radio frequency (RF) magnetron sputtering. The oxygen flow volume and annealed temperatures as growth parameters are systematically investigated. The electrical and optical properties of VO2 and Au:VO2 thin films with different growth conditions are discussed. The semiconductor-metal phase transition temperature decreased by ˜10°C for the sample with Au doping compared to the sample without Au doping. However, the optical transmittance of Au:VO2 thin films is much lower than that of bare VO2. These results show that Au doping has a marked effect on the electrical and optical properties.

Electrical and thermal behavior of unsaturated soils: experimental results

NASA Astrophysics Data System (ADS)

Nouveau, Marie; Grandjean, Gilles; Leroy, Philippe; Philippe, Mickael; Hedri, Estelle; Boukcim, Hassan

2016-05-01

When soil is affected by a heat source, some of its properties are modified, and in particular, the electrical resistivity due to changes in water content. As a result, these changes affect the thermal properties of soil, i.e., its thermal conductivity and diffusivity. We experimentally examine the changes in electrical resistivity and thermal conductivity for four soils with different grain size distributions and clay content over a wide range of temperatures, from 20 to 100 °C. This temperature range corresponds to the thermal conditions in the vicinity of a buried high voltage cable or a geothermal system. Experiments were conducted at the field scale, at a geothermal test facility, and in the laboratory using geophysical devices and probing systems. The results show that the electrical resistivity decreases and the thermal conductivity increases with temperature up to a critical temperature depending on soil types. At this critical temperature, the air volume in the pore space increases with temperature, and the resulting electrical resistivity also increases. For higher temperatures , the thermal conductivity increases sharply with temperature up to a second temperature limit. Beyond it, the thermal conductivity drops drastically. This limit corresponds to the temperature at which most of the water evaporates from the soil pore space. Once the evaporation is completed, the thermal conductivity stabilizes. To explain these experimental results, we modeled the electrical resistivity variations with temperature and water content in the temperature range 20 - 100°C, showing that two critical temperatures influence the main processes occurring during heating at temperatures below 100 °C.

Effect of annealing on structural, optical and electrical properties of SILAR synthesized CuO thin film

NASA Astrophysics Data System (ADS)

Das, M. R.; Mukherjee, A.; Mitra, P.

2017-05-01

Nano crystalline CuO thin films were synthesize on glass substrate using SILAR technique. The structural, optical and electrical properties of the films were carried out for as deposited as well as for films post annealed in the temperature range 300 - 500° C. The X-ray diffraction pattern shows all the films are polycrystalline in nature with monoclinic phase. The crystallite size increase and lattice strain decreases with increase of annealing temperature indicating high quality of the films for annealed films. The value of band gap decreases with increases of annealing temperature of the film. The effect of annealing temperature on ionic conductivity and activation energy to electrical conduction process are discussed.

Magnetic and electrical properties of several Mn-based amorphous alloys

NASA Astrophysics Data System (ADS)

Obi, Y.; Morita, H.; Fujimori, H.

1987-03-01

Magnetic and electrical properties of amorphous Mn-Y, Mn-Zr, and Mn-Nb alloys have been investigated. All these alloys have a temperature-dependent susceptibility which is well fitted by a Curie-Weiss law. This implies the existence of localized magnetic moments associated with the Mn atoms. In addition, amorphous Mn-Y alloys exhibit spin-glass characteristics at low temperature. The experimental results of the electrical resistivity show that the temperature coefficient of resistivity (TCR) of both Mn-Y and Mn-Zr are negative, while Mn-Nb has a positive TCR. On the other hand, the resistivity-temperature curves of Mn-Zr and Mn-Nb have nearly the same tendency but are different from that of Mn-Y.

Ionic and Optical Properties of Methylammonium Lead Iodide Perovskite across the Tetragonal-Cubic Structural Phase Transition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoque, Md Nadim Ferdous; Islam, Nazifah; Li, Zhen

Practical hybrid perovskite solar cells (PSCs) must endure temperatures above the tetragonal-cubic structural phase transition of methylammonium lead iodide (MAPbI3). However, the ionic and optical properties of MAPbI3 in such a temperature range, and particularly, dramatic changes in these properties resulting from a structural phase transition, are not well studied. Herein, we report a striking contrast at approximately 45 degrees C in the ionic/electrical properties of MAPbl3 owing to a change of the ion activation energy from 0.7 to 0.5 eV, whereas the optical properties exhibit no particular transition except for the steady increase of the bandgap with temperature. Thesemore » observations can be explained by the 'continuous' nature of perovskite phase transition. We speculate that the critical temperature at which the ionic/electrical properties change, although related to crystal symmetry variation, is not necessarily the same temperature as when tetragonal-cubic structural phase transition occurs.« less

Thermophysical Properties and Structural Transition of Hg(0.8)Cd(0.2)Te Melt

NASA Technical Reports Server (NTRS)

Li, C.; Scripa, R. N.; Ban, H.; Lin, B.; Su, C.; Lehoczky, S. L.

2004-01-01

Thermophysical properties, namely, density, viscosity, and electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt were measured as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were simultaneously determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(sub 0.8)Cd(0.2)Te melt as the temperature was decreased from 1090 K to the liquidus temperature.

Preparation, Structural and Dielectric Properties of Solution Grown Polyvinyl Alcohol(PVA) Film

NASA Astrophysics Data System (ADS)

Nangia, Rakhi; Shukla, Neeraj K.; Sharma, Ambika

2017-08-01

Flexible dielectrics with high permittivity have been investigated extensively due to their applications in electronic industry. In this work, structural and electrical characteristics of polymer based film have been analysed. Poly vinyl alcohol (PVA) film was prepared by solution casting method. X-ray diffraction (XRD) characterization technique is used to investigate the structural properties. The semi-crystalline nature has been determined by the analysis of the obtained XRD pattern. Electrical properties of the synthesized film have been analysed from the C-V and I-V curves obtained at various frequencies and temperatures. Low conductivity values confirm the insulating behaviour of the film. However, it is found that conductivity increases with temperature. Also, the dielectric permittivity is found to be higher at lower frequencies and higher temperatures, that proves PVA to be an excellent dielectric material which can be used in interface electronics. Dielectric behaviour of the film has been explained based on dipole orientations to slow and fast varying electric field. However further engineering can be done to modulate the structural, electrical properties of the film.

Thermodynamic properties and transport coefficients of two-temperature helium thermal plasmas

NASA Astrophysics Data System (ADS)

Guo, Xiaoxue; Murphy, Anthony B.; Li, Xingwen

2017-03-01

Helium thermal plasmas are in widespread use in arc welding and many other industrial applications. Simulation of these processes relies on accurate plasma property data, such as plasma composition, thermodynamic properties and transport coefficients. Departures from LTE (local thermodynamic equilibrium) generally occur in some regions of helium plasmas. In this paper, properties are calculated allowing for different values of the electron temperature, T e, and heavy-species temperature, T h, at atmospheric pressure from 300 K to 30 000 K. The plasma composition is first calculated using the mass action law, and the two-temperature thermodynamic properties are then derived. The viscosity, diffusion coefficients, electrical conductivity and thermal conductivity of the two-temperature helium thermal plasma are obtained using a recently-developed method that retains coupling between electrons and heavy species by including the electron-heavy-species collision term in the heavy-species Boltzmann equation. It is shown that the viscosity and the diffusion coefficients strongly depend on non-equilibrium ratio θ (θ ={{T}\\text{e}}/{{T}\\text{h}} ), through the plasma composition and the collision integrals. The electrical conductivity, which depends on the electron number density and ordinary diffusion coefficients, and the thermal conductivity have similar dependencies. The choice of definition of the Debye length is shown to affect the electrical conductivity significantly for θ  >  1. By comparing with literature data, it is shown that the coupling between electrons and heavy species has a significant influence on the electrical conductivity, but not on the viscosity. Plasma properties are tabulated in the supplementary data.

Deposition temperature dependent optical and electrical properties of ALD HfO{sub 2} gate dielectrics pretreated with tetrakisethylmethylamino hafnium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, J.; School of Sciences, Anhui University of Science and Technology, Huainan 232001; He, G., E-mail: hegang@ahu.edu.cn

2015-10-15

Highlights: • ALD-derived HfO{sub 2} gate dielectrics have been deposited on Si substrates. • The leakage current mechanism for different deposition temperature was discussed. • Different emission at different field region has been determined precisely. - Abstract: The effect of deposition temperature on the growth rate, band gap energy and electrical properties of HfO{sub 2} thin film deposited by atomic layer deposition (ALD) has been investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the growth rate and optical constant of ALD-derived HfO{sub 2} gate dielectrics are determined precisely. The deposition temperature dependent electrical properties of HfO{sub 2}more » films were determined by capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements. The leakage current mechanism for different deposition temperature has been discussed systematically. As a result, the optimized deposition temperature has been obtained to achieve HfO{sub 2} thin film with high quality.« less

Thermophysical properties and rheological behavior of electro-rheological fluids at different temperatures

NASA Astrophysics Data System (ADS)

Korobko, Evguenia V.; Korobko, Yulia O.

2000-04-01

Fluid disperse systems, sensitive to the external electric field-electrorheological fluids, are finding increasing use in various areas of industry and technology. Their physicomechanical, electrophysical characteristics determine the valuable specific properties of the materials with assigned structure, obtainable with everwide use of electric fields, which makes it possible to substantially enhance efficiency and productiveness of technological processes and to improve the control of operational regimes of the equipment which employ fluid disperse media. The present investigations has been undertaken with the aim of studying thermophysical properties and rheophysical behavior of low-concentration ER- fluid (diatomite in transformer oil) at different temperatures. It was shown that the electric field, which changes considerably the structure of electrorheological fluid, influences effective thermal conductivity and diffusivity coefficients. Their increase with electric field intensity and the increase of the effective viscosity with temperature are connected with the increase of the conductive component of the overall heat transfer through the contact spots between the solid particles, and with intensification of electric convection in the spaces between the dispersed particles.

Frequency and Temperature Dependence of Fabrication Parameters in Polymer Dispersed Liquid Crystal Devices.

PubMed

Torres, Juan C; Vergaz, Ricardo; Barrios, David; Sánchez-Pena, José Manuel; Viñuales, Ana; Grande, Hans Jürgen; Cabañero, Germán

2014-05-02

A series of polymer dispersed liquid crystal devices using glass substrates have been fabricated and investigated focusing on their electrical properties. The devices have been studied in terms of impedance as a function of frequency. An electric equivalent circuit has been proposed, including the influence of the temperature on the elements into it. In addition, a relevant effect of temperature on electrical measurements has been observed.

Evolution of Mechanical and Electrical Properties During Annealing of the Copper Wire Drawn

NASA Astrophysics Data System (ADS)

Zidani, M.; Messaoudi, S.; Baudin, T.; Derfouf, C.; Boulagroun, A.; Mathon, M. H.

2011-12-01

In this work, the evolution of mechanical and electrical properties and microstructure of industrial copper wire used for electrical cabling was characterized. This work is not limited to the interpretation of the microstructural characteristics of the wire-drawn state but also after different annealing treatments. For the lowest temperatures (160 °C and 200 °C), significant changes are not observed in the microstructure (grain size) in the weak deformed wire (28.5%). Instead, variations of some properties of the metal were observed (hardness and electrical resistivity). For strong deformation (61.4% and 84.59%), annealing, leads to recrystallization with a softening material. Let us note that the resistivity increases with deformation level and becomes higher after annealing at low temperature (200 °C).

Evaluation of Temperature-Dependent Effective Material Properties and Performance of a Thermoelectric Module

NASA Astrophysics Data System (ADS)

Chien, Heng-Chieh; Chu, En-Ting; Hsieh, Huey-Lin; Huang, Jing-Yi; Wu, Sheng-Tsai; Dai, Ming-Ji; Liu, Chun-Kai; Yao, Da-Jeng

2013-07-01

We devised a novel method to evaluate the temperature-dependent effective properties of a thermoelectric module (TEM): Seebeck coefficient ( S m), internal electrical resistance ( R m), and thermal conductance ( K m). After calculation, the effective properties of the module are converted to the average material properties of a p- n thermoelectric pillar pair inside the module: Seebeck coefficient ( S TE), electrical resistivity ( ρ TE), and thermal conductivity ( k TE). For a commercial thermoelectric module (Altec 1091) chosen to verify the novel method, the measured S TE has a maximum value at bath temperature of 110°C; ρ TE shows a positive linear trend dependent on the bath temperature, and k TE increases slightly with increasing bath temperature. The results show the method to have satisfactory measurement performance in terms of practicability and reliability; the data for tests near 23°C agree with published values.

Intrinsic electrical properties of LuFe2O4

NASA Astrophysics Data System (ADS)

Lafuerza, Sara; García, Joaquín; Subías, Gloria; Blasco, Javier; Conder, Kazimierz; Pomjakushina, Ekaterina

2013-08-01

We here revisit the electrical properties of LuFe2O4, compound candidate for exhibiting multiferroicity. Measurements of dc electrical resistivity as a function of temperature, electric-field polarization measurements at low temperatures with and without magnetic field, and complex impedance as a function of both frequency and temperature were carried out in a LuFe2O4 single crystal, perpendicular and parallel to the hexagonal c axis, and in several ceramic polycrystalline samples. Resistivity measurements reveal that this material is a highly anisotropic semiconductor, being about two orders of magnitude more resistive along the c axis. The temperature dependence of the resistivity indicates a change in the conduction mechanism at TCO ≈ 320 K from thermal activation above TCO to variable range hopping below TCO. The resistivity values at room temperature are relatively small and are below 5000 Ω cm for all samples but we carried out polarization measurements at sufficiently low temperatures, showing that electric-field polarization curves are a straight line as expected for a paraelectric or antiferroelectric material. Furthermore, no differences are found in the polarization curves when a magnetic field is applied either parallel or perpendicular to the electric field. The analysis of the complex impedance data corroborates that the claimed colossal dielectric constant is a spurious effect mainly derived from the capacitance of the electrical contacts. Therefore, our data unequivocally evidence that LuFe2O4 is not ferroelectric.

The low temperature specific heat and electrical transport, magnetic properties of Pr0.65Ca0.35MnO3

NASA Astrophysics Data System (ADS)

Han, Zhiyong

2017-02-01

The magnetic properties, electrical transport properties, and low temperature specific heat of polycrystalline perovskite manganese oxide Pr0.65Ca0.35MnO3 have been investigated experimentally. It is found that there exists cluster glass state in the sample at low temperature besides the antiferromagnetic insulating state. With the increase of magnetic field, antiferromagnetic insulating state converts to ferromagnetic metal state and the Debye temperature decreases gradually. In addition, the low temperature electron specific heat in zero magnetic field is obviously larger than that of ordinary rare-earth manganites oxide and this phenomenon is related to the itinerant electrons in ferromagnetic cluster state and the disorder in Pr0.65Ca0.35MnO3.

Review of temperature dependence of thermal properties, dielectric properties, and perfusion of biological tissues at hyperthermic and ablation temperatures.

PubMed

Rossmanna, Christian; Haemmerich, Dieter

2014-01-01

The application of supraphysiological temperatures (>40°C) to biological tissues causes changes at the molecular, cellular, and structural level, with corresponding changes in tissue function and in thermal, mechanical and dielectric tissue properties. This is particularly relevant for image-guided thermal treatments (e.g. hyperthermia and thermal ablation) delivering heat via focused ultrasound (FUS), radiofrequency (RF), microwave (MW), or laser energy; temperature induced changes in tissue properties are of relevance in relation to predicting tissue temperature profile, monitoring during treatment, and evaluation of treatment results. This paper presents a literature survey of temperature dependence of electrical (electrical conductivity, resistivity, permittivity) and thermal tissue properties (thermal conductivity, specific heat, diffusivity). Data of soft tissues (liver, prostate, muscle, kidney, uterus, collagen, myocardium and spleen) for temperatures between 5 to 90°C, and dielectric properties in the frequency range between 460 kHz and 3 GHz are reported. Furthermore, perfusion changes in tumors including carcinomas, sarcomas, rhabdomyosarcoma, adenocarcinoma and ependymoblastoma in response to hyperthmic temperatures up to 46°C are presented. Where appropriate, mathematical models to describe temperature dependence of properties are presented. The presented data is valuable for mathematical models that predict tissue temperature during thermal therapies (e.g. hyperthermia or thermal ablation), as well as for applications related to prediction and monitoring of temperature induced tissue changes.

Review of temperature dependence of thermal properties, dielectric properties, and perfusion of biological tissues at hyperthermic and ablation temperatures

PubMed Central

Rossmann, Christian; Haemmerich, Dieter

2016-01-01

The application of supraphysiological temperatures (>40°C) to biological tissues causes changes at the molecular, cellular, and structural level, with corresponding changes in tissue function and in thermal, mechanical and dielectric tissue properties. This is particularly relevant for image-guided thermal treatments (e.g. hyperthermia and thermal ablation) delivering heat via focused ultrasound (FUS), radiofrequency (RF), microwave (MW), or laser energy; temperature induced changes in tissue properties are of relevance in relation to predicting tissue temperature profile, monitoring during treatment, and evaluation of treatment results. This paper presents a literature survey of temperature dependence of electrical (electrical conductivity, resistivity, permittivity) and thermal tissue properties (thermal conductivity, specific heat, diffusivity). Data of soft tissues (liver, prostate, muscle, kidney, uterus, collagen, myocardium and spleen) for temperatures between 5 to 90°C, and dielectric properties in the frequency range between 460 kHz and 3 GHz are reported. Furthermore, perfusion changes in tumors including carcinomas, sarcomas, rhabdomyosarcoma, adenocarcinoma and ependymoblastoma in response to hyperthmic temperatures up to 46°C are presented. Where appropriate, mathematical models to describe temperature dependence of properties are presented. The presented data is valuable for mathematical models that predict tissue temperature during thermal therapies (e.g. hyperthermia or thermal ablation), as well as for applications related to prediction and monitoring of temperature induced tissue changes. PMID:25955712

Temperature Dependent Electrical and Micromechanical Properties of Lanthanum Titanate with Additions of Yttria

NASA Technical Reports Server (NTRS)

Goldsby, Jon C.

2003-01-01

Lanthanum titanate (La2Ti2O7) a layered distorted perovskite (1) with space group Pna2(sub 1) has been shown to have potential as a high temperature piezoelectric (2). However this highly refractory oxide compound must be consolidated at relatively high temperatures approximately 1400 C. Commercial La2Ti207 powders were mechanically alloyed with additions of Y2O3 to lower the consolidation temperature by 300 C and to provide post processing mechanical stability. Temperature dependent electrical, elastic and anelastic behavior were selected as nondestructive means of evaluating the effects of yttria on the properties of this ferroceramic material.

High temperature electrical properties study of Sr{sub 2}(Fe,Ti)O{sub 6} double perovskite materials using impedance spectroscopy method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Triyono, D., E-mail: djoko.triyono@sci.ui.ac.id; Laysandra, Heidi

2016-04-19

The structure, thermal, and electrical properties of double perovskite material Sr{sub 2}(Fe,Ti)O{sub 6} at high temperature have been studied. This material was synthesized by a solid state reaction method. X-ray diffraction characterization at room temperature for all samples shows a single phase and having a structure of cubic double perovskite with Pm3m space group. The variation of Fe and Ti atoms are seen in an increasing of lattice parameter and grain size which is found between 30 nm and 80 nm. The electrical properties as a function of temperature and frequency are characterized by using RLC-meter with impedance spectroscopy method. The impedancemore » data are presented in Nyquist and Bode plot resulting in the equivalent circuit and its parameters. The equivalent circuit shows the effect of grain and grain boundary in the electrical properties of materials. DC conductivity of Sr{sub 2}(Fe,Ti)O{sub 6} as a function of temperature was explained by using Arrhenius equation. The value of the activation energy which is evaluated from dc conductivity as a function of temperature shows the effect of grain and grain boundary. The activation energy exhibits of oxygen vacancy in Sr{sub 2}(Fe,Ti)O{sub 6} which is also supported by morphology of Sr{sub 2}(Fe,Ti)O{sub 6} is characterized by field emission scanning electron microscopy (FESEM).« less

Effects of Combined Stressing on the Electrical Properties of Film and Ceramic Capacitors

NASA Technical Reports Server (NTRS)

Overton, Eric; Hammoud, Ahmad N.; Baumann, Eric D.; Myers, Ira T.

1994-01-01

Advanced power systems which generate, control, and distribute electrical power to many large loads are a requirement for future space exploration missions. The development of high temperature insulating materials and power components constitute a key element in systems which are lightweight, efficient, and are capable of surviving the hostile space environment. In previous work, experiments were carried out to evaluate film and ceramic capacitors for potential use in high temperature applications. The effects of thermal stressing, in air and without electrical bias, on the electrical properties of the capacitors as a function of thermal aging up to 12 weeks were determined. In this work, the combined effects of thermal aging and electrical stresses on the properties of teflon film and ceramic power capacitors were examined. The ceramic capacitors were thermally aged for 35 weeks and the teflon capacitors for 15 weeks at 200 C under full electrical bias and were characterized, on a weekly basis, in terms of their capacitance stability and electrical loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also obtained. The results obtained represent the influence that short-term thermal aging and electrical bias have on the electrical properties of the power capacitors characterized.

Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which itsmore » resistivity is 5.36 × 10{sup 4} Ωcm{sup −1}. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Electrical research on solar cells and photovoltaic materials

NASA Technical Reports Server (NTRS)

Orehotsky, J.

1985-01-01

A systematic study of the properties of various polymer pottant materials and of the electrochemical corrosion mechanisms in solar cell materials is required for advancing the technology of terrestrial photovoltaic modules. The items of specific concern in this sponsored research activity involve: (1) kinetics of plasticizer loss in PVB, (2) kinetics of water absorption and desorption in PVB, (3) kinetics of water absorption and desorption in EVA, (4) the electrical properties at PVB as a function of temperature and humidity, (5) the electrical properties of EVA as a function of temperature and humidity, (6) solar cell corrosion characteristics, (7) water absorption effects in PVB and EVA, and (8) ion implantation and radiation effects in PVB and EVA.

AC conductivity and dielectric properties of Ti-doped CoCr 1.2Fe 0.8O 4 spinel ferrite

NASA Astrophysics Data System (ADS)

Elkestawy, M. A.; Abdel kader, S.; Amer, M. A.

2010-01-01

Dielectric properties of spinel ferrite samples Co 1+xTi xCr 1.2-2xFe 0.8O 4 (0≤ x≤0.5) were investigated as a function of frequency at different temperatures using a complex impedance technique. Also Cole-Cole diagrams of both permittivity and electric modulus were investigated at different temperatures to have an insight into the electric nature of the studied solids. It has been found that the electric modulus M* is the dominating property clarifying the intrinsic picture of these polycrystalline ferrites. The low conductivity and loss factor values indicate that the studied compositions may be good candidates for practical applications.

Relationships between electrical properties and petrography of El-Maghara sandstone formations, Egypt

NASA Astrophysics Data System (ADS)

Kassab, Mohamed A.; Gomaa, Mohamed M.; Lala, Amir M. S.

2017-06-01

Realization of electrical and petrography of rocks is absolutely necessary for geophysical investigations. The petrographical, petrophysical and electrical properties of sandstone rocks (El-Maghara Formation, North Sinai, Egypt) will be discussed in the present work. The goal of this paper was to highlight interrelations between electrical properties in terms of frequency (conductivity, permittivity and impedance) and petrography, as well as mineral composition. Electrical properties including (conductivity and dielectric constant) were measured at room temperature and humidity of (∼35%). The frequency range used will be from 10 Hz to 100 kHz. Slight changes between samples in electrical properties were found to result from changes in composition and texture. Electrical properties generally change with grain size, shape, sorting, mineralogy and mineral composition. The dielectric constant decreases with frequency and increases with increasing clay content. The conductivity increases with the increase in conductor channels among electrodes. Many parameters can combine together to lead to the same electrical properties. The samples are mainly composed of sand with clay and carbonate.

Low-Temperature Properties of Silver

PubMed Central

Smith, David R.; Fickett, F. R.

1995-01-01

Pure silver is used extensively in the preparation of high-temperature superconductor wires, tapes, films, and other configurations in which the silver not only shields the superconducting material from the surrounding materials, but also provides a degree of flexibility and strain relief, as well as stabilization and low-resistance electrical contact. Silver is relatively expensive, but at this stage of superconductor development, its unique combination of properties seems to offer the only reasonable means of achieving usable lengths of conductor. In this role, the low-temperature physical (electrical, thermal, magnetic, optical) and mechanical properties of the silver all become important. Here we present a collection of properties data extracted from the cryogenic literature and, to the extent possible, selected for reliability. PMID:29151733

Frequency and Temperature Dependence of Fabrication Parameters in Polymer Dispersed Liquid Crystal Devices

PubMed Central

Torres, Juan C.; Vergaz, Ricardo; Barrios, David; Sánchez-Pena, José Manuel; Viñuales, Ana; Grande, Hans Jürgen; Cabañero, Germán

2014-01-01

A series of polymer dispersed liquid crystal devices using glass substrates have been fabricated and investigated focusing on their electrical properties. The devices have been studied in terms of impedance as a function of frequency. An electric equivalent circuit has been proposed, including the influence of the temperature on the elements into it. In addition, a relevant effect of temperature on electrical measurements has been observed. PMID:28788632

Effect of pH on the electrical properties and conducting mechanism of SnO2 nanoparticles

NASA Astrophysics Data System (ADS)

Periathai, R. Sudha; Abarna, S.; Hirankumar, G.; Jeyakumaran, N.; Prithivikumaran, N.

2017-03-01

Semiconductor nanoparticles have attracted more interests because of their size-dependent optical and electrical properties.SnO2 is an oxygen-deficient n-type semiconductor with a wide band gap of 3.6 eV (300 K). It has many remarkable applications as sensors, catalysts, transparent conducting electrodes, anode material for rechargeable Li- ion batteries and optoelectronic devices. In the present work, the role of pH in determining the electrical and dielectric properties of SnO2 nanoparticles has been studied as a function of temperature ranging from Room temperature (RT) to 114 °C in the frequency range of 7 MHz to 50 mHz using impedance spectroscopic technique. The non linear behavior observed in the thermal dependence of the conductance of SnO2 nanoparticles is explained by means of the surface property of SnO2 nanoparticles where proton hopping mechanism is dealt with. Jonscher's power law has been fitted for the conductance spectra and the frequency exponent ("s" value) gives an insight about the ac conducting mechanism. The temperature dependence of electrical relaxation phenomenon in the material has been observed. The complex electric modulus analysis indicates the possibility of hopping conduction mechanism in the system with non-exponential type of conductivity relaxation.

Mechanical and electrical properties of low temperature phase MnBi

NASA Astrophysics Data System (ADS)

Jiang, Xiujuan; Roosendaal, Timothy; Lu, Xiaochuan; Palasyuk, Olena; Dennis, Kevin W.; Dahl, Michael; Choi, Jung-Pyung; Polikarpov, Evgueni; Marinescu, Melania; Cui, Jun

2016-01-01

Low temperature phase (LTP) manganese bismuth (MnBi) is a promising rare-earth-free permanent magnet material due to its high intrinsic coercivity and large positive temperature coefficient. While scientists are making progress on fabricating bulk MnBi magnets, engineers have begun considering MnBi magnets for motor applications. Physical properties other than magnetic ones could significantly affect motor design. Here, we report results of our investigation on the mechanical and electrical properties of bulk LTP MnBi and their temperature dependence. A MnBi ingot was prepared using an arc melting technique and subsequently underwent grinding, sieving, heat treatment, and cryomilling. The resultant powders with a particle size of ˜5 μm were magnetically aligned, cold pressed, and sintered at a predefined temperature. Micro-hardness testing was performed on a part of original ingot and we found that the hardness of MnBi was 109 ± 15 HV. The sintered magnets were subjected to compressive testing at different temperatures and it was observed that a sintered MnBi magnet fractured when the compressive stress exceeded 193 MPa at room temperature. Impedance spectra were obtained using electrochemical impedance spectroscopy at various temperatures and we found that the electrical resistance of MnBi at room temperature was about 6.85 μΩ m.

Effect of annealing temperature on the microstructure and optical-electrical properties of Cu-Al-O thin films

NASA Astrophysics Data System (ADS)

Zhang, Y. J.; Liu, Z. T.; Zang, D. Y.; Che, X. S.; Feng, L. P.; Bai, X. X.

2013-12-01

We have successfully prepared Cu-Al-O thin films on silicon (100) and quartz substrates by radio frequency (RF) magnetron sputtering method. The as-deposited Cu-Al-O film is amorphous in nature and post-annealing treatment in argon ambience results in crystallization of the films and the formation of CuAlO2. The annealing temperature plays an important role in the surface morphology, phase constitution and preferred growth orientation of CuAlO2 phase, thus affecting the properties of the film. The film annealed at 900 °C is mainly composed of CuAlO2 phase and shows smooth surface morphology with well-defined grain boundaries, thus exhibiting the optimum optical-electrical properties with electrical resistivity being 79.7 Ω·cm at room temperature and optical transmittance being 80% in visible region. The direct optical band gaps of the films are found in the range of 3.3-3.8 eV depending on the annealing temperature.

Hybrid Perovskite Phase Transition and Its Ionic, Electrical and Optical Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoque, Md Nadim Ferdous; Islam, Nazifah; Zhu, Kai

Hybrid perovskite solar cells (PSCs) under normal operation will reach a temperature above ~ 60 °C, across the tetragonal-cubic structural phase transition of methylammonium lead iodide (MAPbI 3). Whether the structural phase transition could result in dramatic changes of ionic, electrical and optical properties that may further impact the PSC performances should be studied. Herein, we report a structural phase transition temperature of MAPbI 3thin film at ~ 55 °C, but a striking contrast occurred at ~ 45 °C in the ionic and electrical properties of MAPbI 3due to a change of the ion activation energy from 0.7 eV tomore » 0.5 eV. The optical properties exhibited no sharp transition except for the steady increase of the bandgap with temperature. It was also observed that the activation energy for ionic migration steadily increased with increased grain sizes, and reduction of the grain boundary density reduced the ionic migration.« less

Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

NASA Astrophysics Data System (ADS)

Park, M. G.; Choi, W. S.; Hong, B.; Kim, Y. T.; Yoon, D. H.

2002-05-01

In this article, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiC:H) films on annealing temperature (Ta) and radio frequency (rf) power. The substrate temperature (Ts) was 250 °C, the rf power was varied from 30 to 400 W, and the range of Ta was from 400 to 600 °C. The a-SiC:H films were deposited by using the plasma enhanced chemical vapor deposition system on Corning 7059 glasses and p-type Si (100) wafers with a SiH4+CH4 gas mixture. The experimental results have shown that the optical bandgap energy (Eg) of the a-SiC:H thin films changed little on the annealing temperature while Eg increased with the rf power. The Raman spectrum of the thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs. The current-voltage characteristics have shown good electrical properties in relation to the annealed films.

Hydrothermal temperature effect on crystal structures, optical properties and electrical conductivity of ZnO nanostructures

NASA Astrophysics Data System (ADS)

Dhafina, Wan Almaz; Salleh, Hasiah; Daud, Mohd Zalani; Ghazali, Mohd Sabri Mohd; Ghazali, Salmah Mohd

2017-09-01

ZnO is an wide direct band gap semiconductor and possess rich family of nanostructures which turned to be a key role in the nanotechnology field of applications. Hydrothermal method was proven to be simple, robust and low cost among the reported methods to synthesize ZnO nanostructures. In this work, the properties of ZnO nanostructures were altered by varying temperatures of hydrothermal process. The changes in term of morphological, crystal structures, optical properties and electrical conductivity were investigated. A drastic change of ZnO nanostructures morphology and decreases of 002 diffraction peak were observed as the hydrothermal temperature increased. The band gap of samples decreased as the size of ZnO nanostructure increased, whereas the electrical conductivity had no influence on the band gap value but more on the morphology of ZnO nanostructures instead.

Low-temperature phase transitions in a soluble oligoacene and their effect on device performance and stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ward, J. W.; Goetz, K. P.; Obaid, A.

The use of organic semiconductors in high-performance organic field-effect transistors requires a thorough understanding of the effects that processing conditions, thermal, and bias-stress history have on device operation. Here, we evaluate the temperature dependence of the electrical properties of transistors fabricated with 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene, a material that has attracted much attention recently due to its exceptional electrical properties. We have discovered a phase transition at T = 205 K and discuss its implications on device performance and stability. We examined the impact of this low-temperature phase transition on the thermodynamic, electrical, and structural properties of both single crystals and thin films of this material.more » Our results show that while the changes to the crystal structure are reversible, the induced thermal stress yields irreversible degradation of the devices.« less

Multiferroic properties of microwave sintered PbFe12-xO19-δ

NASA Astrophysics Data System (ADS)

Prathap, S.; Madhuri, W.

2017-05-01

The effect of iron deficiency on the structural, electrical, ferroelectric and magnetic properties of nano PbFe12-xO19-δ (where x=0.0, 0.25, 0.50, 0.75, 1.0) hexaferrites prepared by sol-gel auto combustion and processed by microwaves are investigated. X-ray analysis confirms single phase magneto-plumbite phase formation. The surface morphology is studied from Field Emission Scanning Electron Microscope. Further, optical properties are investigated using Fourier Transform Infrared spectra and UV-visible spectra. AC electrical conductivity is estimated as a function of temperature and frequency in the range of room temperature (RT) to 500 °C and 100 Hz to 5MHz. AC electrical conduction analysis shows that conduction is mainly due to small polaron hopping mechanism. The variation of polarization with applied electric field exhibits hysteresis loop confirming the ferroelectric nature. The initial permeability studies with varying temperature reveals that the Curie transition temperature for the present series is around 400 °C. Variation of initial permeability with frequency ranging from 100 to 5 MHz shows a constant value (except for x=0.0) opening avenues for high frequency applications.

Experimental insight into the magnetic and electrical properties of amorphous Ge1-xMnx

NASA Astrophysics Data System (ADS)

Conta, Gianluca; Amato, Giampiero; Coïsson, Marco; Tiberto, Paola

2017-12-01

We present a study of the electrical and magnetic properties of the amorphous Ge1-xMnx.DMS, with 2% ≤ x ≤ 17%, by means of SQUID magnetometry and low temperature DC measurements. The thin films were grown by physical vapour deposition at 50°C in ultrahigh vacuum. The DC electrical characterizations show that variable range hopping is the main mechanism of charge transport below room temperature. Magnetic characterization reveals that a unique and smooth magnetic transition is present in our samples, which can be attributed to ferromagnetic percolation of bound magnetic polarons.

Grain size effect on activation energy in spinel CoFe{sub 2}O{sub 4} ceramic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Supriya, Sweety, E-mail: sweety@iitp.ac.in; Kumar, Sunil; Kar, Manoranjan

2016-05-23

Cobalt ferrite of different average crystallites (from nanocrystallite to micro crystallites) has been prepared by the Sol-Gel Method. The X-ray diffraction (XRD) analysis confirms the cubic spinel phase with no trace of impurity phases. The effect of annealing temperature on micro structure and electric transport properties as a function of frequency and temperature has been studied. It is observed that the electric impedance and conductivity are strongly dependent on grain size. The impedance spectroscopic study is employed to understand the electrical transport properties of cobalt ferrite.

Magnetic field controlled electronic state and electric field controlled magnetic state in α-Fe1.6Ga0.4O3 oxide

NASA Astrophysics Data System (ADS)

Lone, Abdul Gaffar; Bhowmik, R. N.

2018-04-01

We have prepared α-Fe1.6Ga0.4O3 (Ga doped α-Fe2O3) system in rhombohedral phase. The material has shown room temperature ferroelectric and ferromagnetic properties. The existence of magneto-electric coupling at room temperature has been confirmed by the experimental observation of magnetic field controlled electric properties and electric field controlled magnetization. The current-voltage characteristics were controlled by external magnetic field. The magnetic state switching and exchange bias effect are highly sensitive to the polarity and ON and OFF modes of external electric field. Such materials can find novel applications in magneto-electronic devices, especially in the field of electric field controlled spintronics devices and energy storage devices which need low power consumption.

Electric-field control of magnetic properties for α-Fe2O3/Al2O3 films

NASA Astrophysics Data System (ADS)

Cheng, Bin; Qin, Hongwei; Liu, Liang; Xie, Jihao; Zhou, Guangjun; Chen, Lubin; Hu, Jifan

2018-06-01

α-Fe2O3/Al2O3 films can exhibit weak ferromagnetism at room temperature. The saturation magnetization of the thinner film is larger than that of the thick one deposited at the same temperature of 500 °C, which implies that the weak ferromagnetism at room temperature comes not only from the intrinsic canted magnetic structure, but also from the effects of interface between α-Fe2O3/Al2O3, such as the effect of Al diffusion into α-Fe2O3 film. Perpendicular electric field upon α-Fe2O3/Al2O3 film at room temperature could adjust the magnetic properties (saturation magnetization, magnetic remanence, coercivity and saturation magnetizing field). The positive electric field can enhance the magnetism of α-Fe2O3/Al2O3 thin film, while negative electric field can reduce it. The change induced by electric field may be connected with the migration effects of Al3+ ions. The steps of curve for saturation magnetization versus the electric field may reflect these complicated processes. The magnetization of the film deposited at a higher temperature can be changed by electric field more easily. This study may inspire more in-depth research and lead to an alternative approach to future magneto-electronic devices.

Electrical and thermal transport properties of layered Bi2YO4Cu2Se2

NASA Astrophysics Data System (ADS)

Xiao, Yu; Pei, Yanling; Chang, Cheng; Zhang, Xiao; Tan, Xing; Ye, Xinxin; Gong, Shengkai; Lin, Yuanhua; He, Jiaqing; Zhao, Li-Dong

2016-07-01

Bi2YO4Cu2Se2 possesses a low thermal conductivity and high electrical conductivity at room temperature, which was considered as a potential thermoelectric material. In this work, we have investigated the electrical and thermal transport properties of Bi2YO4Cu2Se2 system in the temperature range from 300 K to 873 K. We found that the total thermal conductivity decreases from 1.8 W m-1 K-1 to 0.9 W m-1 K-1, and the electrical conductivity decreases from 850 S/cm to 163 S/cm in the measured temperature range. To investigate how potential of Bi2YO4Cu2Se2 system, we prepared the heavily Iodine doped samples to counter-dope intrinsically high carrier concentration and improve the electrical transport properties. Interestingly, the Seebeck coefficient could be enhanced to +80 μV/K at 873 K, meanwhile, we found that a low thermal conductivity of 0.7 W m-1 K-1 could be achieved. The intrinsically low thermal conductivity in this system is related to the low elastic properties, such as Young's modulus of 70-72 GPa, and Grüneisen parameters of 1.55-1.71. The low thermal conductivity makes Bi2YO4Cu2Se2 system to be a potential thermoelectric material, the ZT value 0.06 at 873 K was obtained, a higher performance is expected by optimizing electrical transport properties through selecting suitable dopants, modifying band structures or by further reducing thermal conductivity through nanostructuring etc.

Effect of geometric configuration on the electrocaloric properties of nanoscale ferroelectric materials

NASA Astrophysics Data System (ADS)

Hou, Xu; Li, Huiyu; Shimada, Takahiro; Kitamura, Takayuki; Wang, Jie

2018-03-01

The electrocaloric properties of ferroelectrics are highly dependent on the domain structure in the materials. For nanoscale ferroelectric materials, the domain structure is greatly influenced by the geometric configuration of the system. Using a real-space phase field model based on the Ginzburg-Landau theory, we investigate the effect of geometric configurations on the electrocaloric properties of nanoscale ferroelectric materials. The ferroelectric hysteresis loops under different temperatures are simulated for the ferroelectric nano-metamaterials with square, honeycomb, and triangular Archimedean geometric configurations. The adiabatic temperature changes (ATCs) for three ferroelectric nano-metamaterials under different electric fields are calculated from the Maxwell relationship based on the hysteresis loops. It is found that the honeycomb specimen exhibits the largest ATC of Δ T = 4.3 °C under a field of 391.8 kV/cm among three geometric configurations, whereas the square specimen has the smallest ATC of Δ T = 2.7 °C under the same electric field. The different electrocaloric properties for three geometric configurations stem from the different domain structures. There are more free surfaces perpendicular to the electric field in the square specimen than the other two specimens, which restrict more polarizations perpendicular to the electric field, resulting in a small ATC. Due to the absence of free surfaces perpendicular to the electric field in the honeycomb specimen, the change of polarization with temperature in the direction of the electric field is more easy and thus leads to a large ATC. The present work suggests a novel approach to obtain the tunable electrocaloric properties in nanoscale ferroelectric materials by designing their geometric configurations.

Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering

NASA Astrophysics Data System (ADS)

Li, Yan; Zhang, Dongping; Wang, Bo; Liang, Guangxing; Zheng, Zhuanghao; Luo, Jingting; Cai, Xingmin; Fan, Ping

2013-12-01

Vanadium oxide thin films were prepared by DC reactive sputtering method, and the samples were annealed in Ar atmosphere under different temperature for 2 hours. The microstructure, optical and electrical properties of the as-grown and treated samples were characterized by XRD, spectrophotometer, and four-probe technique, respectively. XRD results investigated that the main content of the annealed sample are VO2 and V2O5. With annealing temperature increasing, the intensity of the VO2 phase diffraction peak strengthened. The electrical properties reveal that the annealed samples exhibit semiconductor-to-metal transition characteristic at about 40°C. Comparison of transmission spectra of the samples at room temperature and 100°C, a drastic drop in IR region is found.

Thermoelectric properties of V2O5 thin films deposited by thermal evaporation

NASA Astrophysics Data System (ADS)

Santos, R.; Loureiro, J.; Nogueira, A.; Elangovan, E.; Pinto, J. V.; Veiga, J. P.; Busani, T.; Fortunato, E.; Martins, R.; Ferreira, I.

2013-10-01

This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V2O5) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V2O5 phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of -218 μV/K and electrical conductivity of 5.5 (Ω m)-1. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

Characterization Report on Fuels for NEAMS Model Validation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gofryk, Krzysztof

Nearly 20% of the world’s electricity today is generated by nuclear energy from uranium dioxide (UO 2) fuel. The thermal conductivity of UO 2 governs the conversion of heat produced from fission events into electricity and it is an important parameter in reactor design and safety. While nuclear fuel operates at high to very high temperatures, thermal conductivity and other materials properties lack sensitivity to temperature variations and to material variations at reactor temperatures. As a result, both the uncertainties in laboratory measurements at high temperatures and the small differences in properties of different materials inevitably lead to large uncertaintiesmore » in models and little predictive power. Conversely, properties measured at low to moderate temperatures have more sensitivity, less uncertainty, and have larger differences in properties for different materials. These variations need to be characterized as they will afford the highest predictive capability in modeling and offer best assurances for validation and verification at all temperatures. This is well emphasized in the temperature variation of the thermal conductivity of UO 2.« less

Electric Conduction in Solids: a Pedagogical Approach Supported by Laboratory Measurements and Computer Modelling Environments

NASA Astrophysics Data System (ADS)

Bonura, A.; Capizzo, M. C.; Fazio, C.; Guastella, I.

2008-05-01

In this paper we present a pedagogic approach aimed at modeling electric conduction in semiconductors, built by using NetLogo, a programmable modeling environment for building and exploring multi-agent systems. `Virtual experiments' are implemented to confront predictions of different microscopic models with real measurements of electric properties of matter, such as resistivity. The relations between these electric properties and other physical variables, like temperature, are, then, analyzed.

Modification of the electrical, optical and thermal properties of L-Arginine Perchlorate single crystals by 5 kGy and 8 kGy electron beam irradiation for optoelectronic devices

NASA Astrophysics Data System (ADS)

Thomas, Prince; Santhosh Kumar, R.; Sreekanth, G.; John, Bitto; Sanjeev, Ganesh; Joseph, Ginson P.

2017-11-01

This paper attempts to elucidate the effect of 5 kGy and 8 kGy electron irradiation on the optical, thermal and electrical properties of a prominent amino acid crystal, L-Arginine Perchlorate (LAPCl) grown by low-temperature solution growth technique. Optical absorption studies revealed that the UV lower cut-off wavelength shift towards the higher wavelength region (Red shift), the optical band gap of LAPCl were found to be decreasing while the Urbach energy was found to be increasing with increasing the dosage of irradiation. Fourier Transform Infrared (FT-IR) spectroscopic result showed that peak intensities corresponding to typical bonding increase with the increase in electron beam irradiation dosage. Electrical studies revealed that the dielectric constant, loss and conductivity of the sample increases with increasing the dosage of irradiation. The behaviour of electrical properties on temperature and thermal properties has also been investigated.

Effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films

NASA Astrophysics Data System (ADS)

Kudo, Kohei; Yamada, Shinya; Chikada, Jinichiro; Shimanuki, Yuta; Nakamura, Yoshiaki; Hamaya, Kohei

2018-04-01

We study the effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films. We find that temperature dependence of electrical resistivity and carrier type for Fe2- x V1+ x Al films are similar to those for bulk samples reported previously. In addition, the electrical and thermoelectric properties can be modulated by varying x. These results indicate that the electronic band structure having a pseudo gap at around the Fermi level is demonstrated even in thin-film Fe2VAl samples. This study will lead to further improvement in thermoelectric properties of the thin-film Fe2VAl.

Temperature Dependent Electrical Transport Properties of Ni-Cr and Co-Cr Binary Alloys

NASA Astrophysics Data System (ADS)

Thakore, B. Y.; Suthar, P. H.; Khambholja, S. G.; Gajjar, P. N.; Bhatt, N. K.; Jani, A. R.

2011-12-01

The temperature dependent electrical transport properties viz. electrical resistivity and thermal conductivity of Ni10Cr90 and Co20Cr80 alloys are computed at various temperatures. The electrical resistivity has been calculated according to Faber-Ziman model combined with Ashcroft-Langreth partial structure factors. In the present work, to include the ion-electron interaction, we have used a well tested local model potential. For exchange-correlation effects, five different forms of local field correction functions due to Hartree (H), Taylor (T), Ichimaru and Utsumi (IU), Farid et al (F) and Sarkar et al (S) are used. The present results due to S function are in good agreement with the experimental data as compared to results obtained using other four functions. The S functions satisfy compressibility sum rule in long wave length limit more accurately as compared to T, IU and F functions, which may be responsible for better agreement of results, obtained using S function. Also, present result confirms the validity of present approach in determining the transport properties of alloys like Ni-Cr and Co-Cr.

Electrical and Magnetic Measurements from microHertz to teraHertz (Invited)

NASA Astrophysics Data System (ADS)

Olhoeft, G. R.

2009-12-01

In making electrical and magnetic measurements, half the problem is the measurement of the properties of the rocks, soils and fluids, and half the problem is duplicating the environment. Equally important with applying a field stimulus and measuring the response are fluid content and chemistry, temperature, pressure, time and other factors. The magnetic properties of Martian soils are not interesting under terrestrial ambient lab temperatures (298 K), but exhibit a very interesting relaxation at Mars ambient temperatures (213 K) which is important in radar sounding. The electrical properties of granite are nearly identical at 523 K vacuum dry and 263 K water saturated which is important in geothermal exploration. The most common zeolite, clinoptilolite, can behave like kaolinite or montmorillonite depending upon salinity and temperature in many of its properties. Making measurements at very high frequencies can make frozen water look like a clear ice cube or a white opaque snowball depending upon grain size scattering and thermal history. Low frequency measurements are more sensitive to chemistry as reactions can't keep up at high frequencies. In situ measurements are more complicated (including effects of heterogeneity and scale), but laboratory measurements allow investigation of more variables to understand process and property controlling factors, including effects of removing the sample from its environment.

The structural and electrical properties of polycrystalline La0.8Ca0.17Ag0.03MnO3 manganites

NASA Astrophysics Data System (ADS)

Ruli, F.; Kurniawan, B.; Imaduddin, A.

2018-04-01

In this paper, the authors report the electrical properties of polycrystalline La0.8Ca0.17Ag0.03MnO3 manganites synthesized using sol-gel method. The X-ray diffraction (XRD) patterns of polycrystalline La0.8Ca0.17Ag0.03MnO3 samples reveal an orthorhombic perovskite structure with Pnma space group. Analysis using energy dispersive X-ray (EDX) confirms that the sample contains all expected chemical elements without any additional impurity. The measurement of resistivity versus temperature using cryogenic magnetometer was performed to investigate the electrical properties. The results show that the electrical resistivity of polycrystalline La0.8Ca0.17Ag0.03MnO3 exhibits metalic behavior below 244 K. The temperature dependence of electrical resistivity dominantly emanates from electron-electron scattering and the grain/domain boundary play a important role in conduction mechanism in polycrystalline La0.8Ca0.17Ag0.03MnO3.

Electrical and Thermal Transport Property Studies of High-Temperature Thermoelectric Materials.

DTIC Science & Technology

1984-12-15

Transport Property Studies of High-Temperature Thermoelectric Mateial 12. PERSONAL AUTHIOR(S) 113. TYPE OF REPORT 13b. TIME COVERED Ai DATE OF REPORtT (Yr...with an ABO(3 perovskite structure. Transport properties have been determined for various doping ele- ments and for different compositions. These data...THERMAL TRANSPORT PROPERTY STUDIES Unannounced [j OF HIGH-TEMPERATURE THERMOELECTRIC MATERIALS Justi±icI iou. CONTRACT F-49620-83-0109 DEF By-- Battelle

Temperature and electrical memory of polymer fibers

NASA Astrophysics Data System (ADS)

Yuan, Jinkai; Zakri, Cécile; Grillard, Fabienne; Neri, Wilfrid; Poulin, Philippe

2014-05-01

We report in this work studies of the shape memory behavior of polymer fibers loaded with carbon nanotubes or graphene flakes. These materials exhibit enhanced shape memory properties with the generation of a giant stress upon shape recovery. In addition, they exhibit a surprising temperature memory with a peak of generated stress at a temperature nearly equal to the temperature of programming. This temperature memory is ascribed to the presence of dynamical heterogeneities and to the intrinsic broadness of the glass transition. We present recent experiments related to observables other than mechanical properties. In particular nanocomposite fibers exhibit variations of electrical conductivity with an accurate memory. Indeed, the rate of conductivity variations during temperature changes reaches a well defined maximum at a temperature equal to the temperature of programming. Such materials are promising for future actuators that couple dimensional changes with sensing electronic functionalities.

Nerve Impulses in Plants

ERIC Educational Resources Information Center

Blatt, F. J.

1974-01-01

Summarizes research done on the resting and action potential of nerve impulses, electrical excitation of nerve cells, electrical properties of Nitella, and temperature effects on action potential. (GS)

Multiple electrical phase transitions in Al substituted barium hexaferrite

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Supriya, Sweety; Kar, Manoranjan

2017-12-01

Barium hexaferrite is known to be a very good ferromagnetic material. However, it shows very good dielectric properties, i.e., the dielectric constant is comparable to that of the ferroelectric material. However, its crystal symmetry does not allow it to be a ferroelectric material. Hence, the electrical properties have revived the considerable research interest on these materials, not only for academic interest, but also for technological applications. There are a few reports on temperature dependent dielectric behavior of these materials. However, the exact cause of dielectric as well as electrical conductivity is yet to be established. Hence, Al (very good conducting material) substituted barium hexaferrite (BaFe12-xAlxO19, x = 0.0-4.0) has been prepared by following the modified sol-gel method to understand the ac and DC electrical properties of these materials. The crystal structure and parameters have been studied by employing the XRD and FTIR techniques. There are two transition temperatures, which have been observed in the temperature dependent ac dielectric and DC resistivity measurement. The response of dielectric behaviors to temperature is similar to that of the ferroelectric material; however, the dielectric polarization is due to the polaron hopping, which is evident from the DC resistivity analysis. Hence, the present observations lead to understand the electrical properties of barium hexaferrite. The frequency dependent dielectric dispersion can be understood by the modified Debye model. More interestingly, the dielectric constant decreases and DC resistivity increases with the increase in the Al concentration, which has the correlation between bond length modifications in the crystal due to substitution.

Superconductivity at 52.5 K in the lanthanum-barium-copper-oxide system

NASA Technical Reports Server (NTRS)

Chu, C. W.; Hor, P. H.; Meng, R. L.; Gao, L.; Huang, Z. J.

1987-01-01

The electrical properties of the (La/0/9/Ba/0.1/)CuO/4-y/ system are examined under ambient and hydrostatic pressures. The resistance, ac magnetic susceptibility, and superconductivity onset, midpoint, and intercept temperatures are measured. It is observed that at ambient pressure the resistance decreases with temperature decreases, and the ac susceptibility shows diamagnetic shifts starting at about 32 K. Under hydrostatic pressure a superconducting transition with an onset temperature of 52.5 K is observed, and the resistance increases at lower temperatures. The data reveal that the electrical properties of the La-Ba-Cu-O system are dependent on samples and preparation conditions. Various causes for the high temperature superconductivity of the system are proposed.

Transparent and conducting ZnO films grown by spray pyrolysis

NASA Astrophysics Data System (ADS)

Hadjeris, Lazhar; Herissi, Labidi; Badreddine Assouar, M.; Easwarakhanthan, Thomas; Bougdira, Jamal; Attaf, Nadhir; Salah Aida, M.

2009-03-01

ZnO films were prepared using the simple, flexible and cost-effective spray pyrolysis technique at different substrate temperatures and precursor molarity values. The films' structural, optical and electrical properties were investigated by x-ray diffraction, UV-VIS transmittance spectroscopy, profilometry and voltage-current-temperature (VIT) measurements. The films prepared at substrate temperatures above 400 °C appear better crystallized with (0 0 2) preferred orientation and exhibit higher visible transmittance (65-80%), higher electrical n-type semiconductor conductivity (10-50 (Ω cm)-1), lower activation energy (<0.35 eV) and smaller Urbach energy (80 meV). These results indicate that such sprayed ZnO films are chemically purer and have many fewer defects and less disorder owing to an almost complete chemical decomposition of the precursor droplets. ZnO films having desired optical and electrical properties for cheaper large-area solar cells may thus be tailored through the substrate temperature and the precursor molarity.

Electrical properties of CZTS pellets made from microwave-processed powder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghediya, Prashant R., E-mail: prashantghediya@yahoo.co.in; Chaudhuri, Tapas K.

2015-06-24

Electrical properties of the kesterite copper zinc tin sulphide (CZTS) pellets in the temperature range from 300 K to 500 K are reported. The pellets are p-type with thermoelectric power (TEP) of + 175 µV/K. Electrical conductivity (σ) increases with the temperatures and is found to be due to thermionic emission (TE) over grain boundary (GB) barriers with activation energy of 170 meV. CZTS pellets are made from micropowders synthesized by microwave irradiation of precursor solution. Formation of kesterite CZTS is confirmed by X-ray diffraction (XRD) and Raman spectroscopy. Scanning Electron Microscope (SEM) shows that powder is micron sized spherical particles.

Material Damage System and Method for Determining Same

NASA Technical Reports Server (NTRS)

Okojie, Robert (Inventor)

2017-01-01

A system and method for determining a change in a thickness and temperature of a surface of a material are disclosed herein. The system and the method are usable in a thermal protection system of a space vehicle, such as an aeroshell of a space vehicle. The system and method may incorporate micro electric sensors arranged in a ladder network and capacitor strip sensors. Corrosion or ablation causes a change in an electrical property of the sensors. An amount of or rate of the corrosion or the ablation and a temperature of the material is determined based on the change of the electrical property of the sensors.

Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

NASA Astrophysics Data System (ADS)

Ahmad, S.; Ibrahim, A.; Alias, R.; Shapee, S. M.; Ambak, Z.; Zakaria, S. Z.; Yahya, M. R.; Mat, A. F. A.

2010-03-01

This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1 mm thickness were sintered at 1100° C, 1300° C and 1500° C for about 20 hours using heating and cooling rates of 2° C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.

Electrical transport properties of single-crystal CaB 6 , SrB 6 , and BaB 6

DOE PAGES

Stankiewicz, Jolanta; Rosa, Priscila F. S.; Schlottmann, Pedro; ...

2016-09-22

We measure the electrical resistivity and Hall effect of alkaline-earth-metal hexaboride single crystals as a function of temperature, hydrostatic pressure, and magnetic field. The transport properties vary weakly with the external parameters and are modeled in terms of intrinsic variable-valence defects. These defects can stay either in (1) delocalized shallow levels or in (2) localized levels resonant with the conduction band, which can be neutral or negatively charged. Satisfactory agreement is obtained for electronic transport properties in a broad temperature and pressure range, though fitting the magnetoresistance is less straightforward and a combination of various mechanisms is needed to explainmore » the field and temperature dependences.« less

Electrical transport properties of single-crystal CaB 6 , SrB 6 , and BaB 6

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stankiewicz, Jolanta; Rosa, Priscila F. S.; Schlottmann, Pedro

We measure the electrical resistivity and Hall effect of alkaline-earth-metal hexaboride single crystals as a function of temperature, hydrostatic pressure, and magnetic field. The transport properties vary weakly with the external parameters and are modeled in terms of intrinsic variable-valence defects. These defects can stay either in (1) delocalized shallow levels or in (2) localized levels resonant with the conduction band, which can be neutral or negatively charged. Satisfactory agreement is obtained for electronic transport properties in a broad temperature and pressure range, though fitting the magnetoresistance is less straightforward and a combination of various mechanisms is needed to explainmore » the field and temperature dependences.« less

Silver Oxalate Ink with Low Sintering Temperature and Good Electrical Property

NASA Astrophysics Data System (ADS)

Yang, Wendong; Wang, Changhai; Arrighi, Valeria

2018-02-01

Favorable conductivity at low temperature is desirable for flexible electronics technology, where formulation of a suitable ink material is very critical. In this paper, a type of silver organic decomposable ink (10 wt.% silver content) was formulated by using as-prepared silver oxalate and butylamine, producing silver films with good uniformity and conductivity on a polyimide substrate after sintering below 130°C (15.72 μΩ cm) and even at 100°C (36.29 μΩ cm). Silver oxalate powder with good properties and an appropriate solid amine complex with lower decomposition temperature were synthesized, both differing from those reported in the literature. The influence of the factors on the electrical properties of the produced silver films such as sintering temperature and time was studied in detail and the relationship between them was demonstrated.

Consideration of Conductive Motor Winding Materials at Room and Elevated Temperatures

NASA Technical Reports Server (NTRS)

de Groh, Henry C., III

2015-01-01

A brief history of conductive motor winding materials is presented, comparing various metal motor winding materials and their properties in terms of conductivity, density and cost. The proposed use of carbon nanotubes (CNTs) and composites incorporating CNTs is explored as a potential way to improve motor winding conductivity, density, and reduce motor size which are important to electric aircraft technology. The conductivity of pure Cu, a CNT yarn, and a dilute Cu-CNT composite was measured at room temperature and at several temperatures up to 340 C. The conductivity of the Cu-CNT composite was about 3 percent lower than pure copper's at all temperatures measured. The conductivity of the CNT yarn was about 200 times lower than copper's, however, the yarn's conductivity dropped less with increasing temperature compared to Cu. It is believed that the low conductivity of the yarn is due primarily to high interfacial resistances and the presence of CNTs with low, semiconductor like electrical properties (s-CNT). It is believed the conductivity of the CNT-Cu composite could be improved by not using s-CNT, and instead using only CNTs with high, metallic like electrical properties (m-CNT); and by increasing the vol% m-CNTs.

Electrical transport properties of spray deposited transparent conducting ortho-Zn2SnO4 thin films

NASA Astrophysics Data System (ADS)

Ramarajan, R.; Thangaraju, K.; Babu, R. Ramesh; Joseph, D. Paul

2018-04-01

Ortho Zinc Stannate (Zn2SnO4) exhibits excellent electrical and optical properties to serve as alternate transparent electrode in optoelectronic devices. Here we have optimized ortho-Zn2SnO4 thin film by spray pyrolysis method. Deposition was done onto a pre-heated glass substrate at a temperature of 400 °C. The XRD pattern indicated films to be polycrystalline with cubic structure. The surface of films had globular and twisted metal sheet like morphologies. Films were transparent in the visible region with band gap around 3.6 eV. Transport properties were studied by Hall measurements at 300 K. Activation energies were calculated from Arrhenius's plot from temperature dependent electrical measurements and the conduction mechanism is discussed.

Plasma Properties of an Exploding Semiconductor Igniter

NASA Astrophysics Data System (ADS)

McGuirk, J. S.; Thomas, K. A.; Shaffer, E.; Malone, A. L.; Baginski, T.; Baginski, M. E.

1997-11-01

Requirements by the automotive industry for low-cost, pyrotechnic igniters for automotive airbags have led to the development of several semiconductor devices. The properties of the plasma produced by the vaporization of an exploding semiconductor are necessary in order to minimize the electrical energy requirements. This work considers two silicon-based semiconductor devices: the semiconductor bridge (SCB) and the semiconductor junction igniter both consisting of etched silicon with vapor deposited aluminum structures. Electrical current passing through the device heats a narrow junction region to the point of vaporization creating an aluminum and silicon low-temperature plasma. This work will investigate the electrical characteristics of both devices and infer the plasma properties. Furthermore optical spectral measurements will be taken of the exploding devices to estimate the temperature and density of the plasma.

The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zha, Gangqiang; Yang, Jian; Xu, Lingyan

2014-01-28

Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance canmore » be explained using the deep trap model.« less

Structural and electrical transport properties of La2Mo2O9 thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Paul, T.; Ghosh, A.

2017-04-01

We have studied the structure and electrical properties of La2Mo2O9 thin films of different thicknesses prepared by the laser deposition technique at different substrate temperatures. The structural properties of the thin films have been investigated using XRD, XPS, AFM, TEM, SEM, and Raman spectroscopy. The electrical transport properties of the thin films have been investigated in wide temperature and frequency ranges. The cubic nature of the thin films has been confirmed from structural analysis. An enhancement of the oxygen ion conductivity of the films up to five orders of magnitude is obtained compared to that of the bulk La2Mo2O9, suggesting usefulness of the thin films as electrolytes in micro-solid oxide fuel cells. The enhanced dc ionic conductivity of the thin films has been interpreted using the rule of the mixture model, while a power law model has been used to investigate the frequency and temperature dependences of the conductivity. The analysis of the results predicts the three-dimensional oxygen ion conduction in the thin films.

Property and microstructural nonuniformity in the yttrium-barium-copper-oxide superconductor determined from electrical, magnetic, and ultrasonic measurements. Ph.D. Thesis - Case Western Reserve Univ.

NASA Technical Reports Server (NTRS)

Roth, Don J.

1991-01-01

The purpose of this dissertation was the following: (1) to characterize the effect of pore fraction on a comprehensive set of electrical and magnetic properties for the yttrium-barium-copper-oxide (YBCO) high temperature ceramic superconductor; and (2) to determine the viability of using a room-temperature, nondestructive characterization method to aid in the prediction of superconducting (cryogenic) properties. The latter involved correlating ultrasonic velocity measurements at room temperature with property-affecting pore fraction and oxygen content variations. The use of ultrasonic velocity for estimating pore fraction in YBCO is presented, and other polycrystalline materials are reviewed, modeled, and statistically analyzed. This provides the basis for using ultrasonic velocity to interrogate microstructure. The effect of pore fraction (0.10-0.25) on superconductor properties of YBCO samples was characterized. Spatial (within-sample) variations in microstructure and superconductor properties were investigated, and the effect of oxygen content on elastic behavior was examined. Experimental methods used included a.c. susceptibility, electrical, and ultrasonic velocity measurements. Superconductor properties measured included transition temperature, magnetic transition width, transport and magnetic critical current density, magnetic shielding, a.c. loss, and sharpness of the voltage-current characteristics. An ultrasonic velocity image constructed from measurements at 1mm increments across a YBCO sample revealed microstructural variations that correlated with variations in magnetic shielding and a.c. loss behavior. Destructive examination using quantitative image analysis revealed pore fraction to be the varying microstructural feature.

Relationship between electrical properties and crystallization of indium oxide thin films using ex-situ grazing-incidence wide-angle x-ray scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

González, G. B.; Okasinski, J. S.; Buchholz, D. B.

Grazing-incidence, wide-angle x-ray scattering measurements were conducted on indium oxide thin films grown on silica substrates via pulsed laser deposition. Growth temperatures (T G) in this study ranged from -50 °C to 600 °C, in order to investigate the thermal effects on the film structure and its spatial homogeneity, as well as their relationship to electrical properties. Films grown below room temperature were amorphous, while films prepared at T G = 25 °C and above crystallized in the cubic bixbyite structure, and their crystalline fraction increased with deposition temperature. The electrical conductivity (σ) and electrical mobility (μ) were strongly enhancedmore » at low deposition temperatures. For T G = 25 °C and 50 °C, a strong < 100 > preferred orientation (texture) occurred, but it decreased as the deposition temperature, and consequential crystallinity, increased. Higher variations in texture coefficients and in lattice parameters were measured at the film surface compared to the interior of the film, indicating strong microstructural gradients. At low crystallinity, the in-plane lattice spacing expanded, while the out-of-plane spacing contracted, and those values merged at T G = 400 °C, where high μ was measured. This directional difference in lattice spacing, or deviatoric strain, was linear as a function of both deposition temperature and the degree of crystallinity. The crystalline sample with T G = 100 °C had the lowest mobility, as well as film diffraction peaks which split into doublets. The deviatoric strains from these doublet peaks differ by a factor of four, supporting the presence of both a microstructure and strain gradient in this film. More isotropic films exhibit larger l values, indicating that the microstructure directly correlates with electrical properties. Lastly, these results provide valuable insights that can help to improve the desirable properties of indium oxide, as well as other transparent conducting oxides.« less

Relationship between electrical properties and crystallization of indium oxide thin films using ex-situ grazing-incidence wide-angle x-ray scattering

NASA Astrophysics Data System (ADS)

González, G. B.; Okasinski, J. S.; Buchholz, D. B.; Boesso, J.; Almer, J. D.; Zeng, L.; Bedzyk, M. J.; Chang, R. P. H.

2017-05-01

Grazing-incidence, wide-angle x-ray scattering measurements were conducted on indium oxide thin films grown on silica substrates via pulsed laser deposition. Growth temperatures (TG) in this study ranged from -50 °C to 600 °C, in order to investigate the thermal effects on the film structure and its spatial homogeneity, as well as their relationship to electrical properties. Films grown below room temperature were amorphous, while films prepared at TG = 25 °C and above crystallized in the cubic bixbyite structure, and their crystalline fraction increased with deposition temperature. The electrical conductivity (σ) and electrical mobility (μ) were strongly enhanced at low deposition temperatures. For TG = 25 °C and 50 °C, a strong ⟨100⟩ preferred orientation (texture) occurred, but it decreased as the deposition temperature, and consequential crystallinity, increased. Higher variations in texture coefficients and in lattice parameters were measured at the film surface compared to the interior of the film, indicating strong microstructural gradients. At low crystallinity, the in-plane lattice spacing expanded, while the out-of-plane spacing contracted, and those values merged at TG = 400 °C, where high μ was measured. This directional difference in lattice spacing, or deviatoric strain, was linear as a function of both deposition temperature and the degree of crystallinity. The crystalline sample with TG = 100 °C had the lowest mobility, as well as film diffraction peaks which split into doublets. The deviatoric strains from these doublet peaks differ by a factor of four, supporting the presence of both a microstructure and strain gradient in this film. More isotropic films exhibit larger μ values, indicating that the microstructure directly correlates with electrical properties. These results provide valuable insights that can help to improve the desirable properties of indium oxide, as well as other transparent conducting oxides.

Relationship between electrical properties and crystallization of indium oxide thin films using ex-situ grazing-incidence wide-angle x-ray scattering

DOE PAGES

González, G. B.; Okasinski, J. S.; Buchholz, D. B.; ...

2017-05-25

Grazing-incidence, wide-angle x-ray scattering measurements were conducted on indium oxide thin films grown on silica substrates via pulsed laser deposition. Growth temperatures (T G) in this study ranged from -50 °C to 600 °C, in order to investigate the thermal effects on the film structure and its spatial homogeneity, as well as their relationship to electrical properties. Films grown below room temperature were amorphous, while films prepared at T G = 25 °C and above crystallized in the cubic bixbyite structure, and their crystalline fraction increased with deposition temperature. The electrical conductivity (σ) and electrical mobility (μ) were strongly enhancedmore » at low deposition temperatures. For T G = 25 °C and 50 °C, a strong < 100 > preferred orientation (texture) occurred, but it decreased as the deposition temperature, and consequential crystallinity, increased. Higher variations in texture coefficients and in lattice parameters were measured at the film surface compared to the interior of the film, indicating strong microstructural gradients. At low crystallinity, the in-plane lattice spacing expanded, while the out-of-plane spacing contracted, and those values merged at T G = 400 °C, where high μ was measured. This directional difference in lattice spacing, or deviatoric strain, was linear as a function of both deposition temperature and the degree of crystallinity. The crystalline sample with T G = 100 °C had the lowest mobility, as well as film diffraction peaks which split into doublets. The deviatoric strains from these doublet peaks differ by a factor of four, supporting the presence of both a microstructure and strain gradient in this film. More isotropic films exhibit larger l values, indicating that the microstructure directly correlates with electrical properties. Lastly, these results provide valuable insights that can help to improve the desirable properties of indium oxide, as well as other transparent conducting oxides.« less

Effect of Annealing Temperature on Structural, Optical, and Electrical Properties of Sol-Gel Spin-Coating-Derived Cu2ZnSnS4 Thin Films

NASA Astrophysics Data System (ADS)

Hosseinpour, Rabie; Izadifard, Morteza; Ghazi, Mohammad Ebrahim; Bahramian, Bahram

2018-02-01

The effect of annealing temperature on structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films grown on a glass substrate by spin coating sol-gel technique has been studied. Structural study showed that all samples had kesterite crystalline structure. Scanning electron microscopy images showed that the crystalline quality of the samples was improved by heat treatment. Optical study showed that the energy gap values for the samples ranged from 1.55 eV to 1.78 eV. Moreover, good optical conductivity values (1012 S-1 to 1014 S-1) were obtained for the samples. Investigation of the electrical properties of the CZTS thin films showed that the carrier concentration increased significantly with the annealing temperature. The photoelectrical behavior of the samples revealed that the photocurrent under light illumination increased significantly. Overall, the results show that the CZTS thin films annealed at 500°C had better structural, optical, and electrical properties and that such CZTS thin films are desirable for use as absorber layers in solar cells. The photovoltaic properties of the CZTS layer annealed at 500°C were also investigated and the associated figure of merit calculated. The results showed that the fabricated ZnS-CZTS heterojunction exhibited good rectifying behavior but rather low fill factor.

Compositional dependence of phase structure and electrical properties in (K0.42Na0.58)NbO3-LiSbO3 lead-free ceramics

NASA Astrophysics Data System (ADS)

Wu, Jiagang; Xiao, Dingquan; Wang, Yuanyu; Zhu, Jianguo; Yu, Ping; Jiang, Yihang

2007-12-01

(1-x)(K0.42Na0.58)NbO3-xLiSbO3 [(1-x)KNN-xLS] lead-free piezoelectric ceramics were prepared by the conventional mixed oxide method. The compositional dependence of the phase structure and the electrical properties of the ceramics were studied. A morphotropic phase boundary (MPB) between the orthorhombic and tetragonal phases was identified in the composition range of 0.04

Ambient temperature thermoelectric performance of thermally evaporated p-type Bi-Sb-Te thin films

NASA Astrophysics Data System (ADS)

Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

2018-04-01

Bismuth antimony telluride (BST) compounds have shown a promising performance in low to medium temperature thermoelectric (TE) conversion. One such composition, Bi1.2Sb0.8Te3, was synthesized by melting elemental entities and thin films of the as-synthesized material were deposited by thermal evaporation. X-Ray Diffraction analysis was conducted to study the crystallographic phases and other structural properties. Electrical conductivity and Seebeck coefficient measurements of as-prepared thin films were conducted in the temperature range from 303-363 K with a view to study ambient temperature application of the synthesized material for power generation in which an increasing trend was observed in the Seebeck coefficient. Electrical conductivity displayed a maximum value of 0.22 × 104 Sm-1 that was comparable to other Bi-Sb-Te compositions whereas power factor had its peak at 323 K. These trends observed in electrical properties indicate that synthesized material can be used for room temperature TE module fabrication.

Electrical Characterization of Temperature Dependent Resistive Switching in Pr0.7C0.3MnO3

NASA Astrophysics Data System (ADS)

Lopez, Melinda; Salvo, Christopher; Tsui, Stephen

2012-02-01

Resistive switching offers a non-volatile and reversible means to possibly create a more physically compact yet larger access capacity in memory technology. While there has been a great deal of research conducted on this electrical property in oxide materials, there is still more to be learned about this at both high voltage pulsing and cryogenic temperatures. In this work, the electrical properties of a PCMO-metal interface switch were examined after application of voltage pulsing varying from 100 V to 1000 V and at temperatures starting at 293 K and lowered to 80 K. What was discovered was that below temperatures of 150 K, the resistive switching began to decrease across all voltage pulsing and that at all temperatures before this cessation, the change in resistive switching increased with higher voltage pulsing. We suggest that a variable density of charge traps at the interface is a likely mechanism, and work continues to extract more details.

Vapor-phase polymerization of poly(3,4-ethylenedioxythiophene) (PEDOT) on commercial carbon coated aluminum foil as enhanced electrodes for supercapacitors

NASA Astrophysics Data System (ADS)

Tong, Linyue; Skorenko, Kenneth H.; Faucett, Austin C.; Boyer, Steven M.; Liu, Jian; Mativetsky, Jeffrey M.; Bernier, William E.; Jones, Wayne E.

2015-11-01

Laminar composite electrodes are prepared for application in supercapacitors using a catalyzed vapor-phase polymerization (VPP) of 3,4-ethylenedioxythiophene (EDOT) on the surface of commercial carbon coated aluminum foil. These highly electrically conducting polymer films provide for rapid and stable power storage per gram at room temperature. The chemical composition, surface morphology and electrical properties are characterized by Raman spectroscopy, scanning electron microscopy (SEM), and conducting atomic force microscopy (C-AFM). A series of electrical measurements including cyclic voltammetry (CV), charge-discharge (CD) and electrochemical impedance spectroscopy are also used to evaluate electrical performance. The processing temperature of VPP shows a significant effect on PEDOT morphology, the degree of orientation and its electrical properties. The relatively high temperature leads to high specific area and large conductive domains of PEDOT layer which benefits the capacitive behavior greatly according to the data presented. Since the substrate is already highly conductive, the PEDOT based composite can be used as electrode materials directly without adding current collector. By this simple and efficient process, PEDOT based composites exhibit specific capacitance up to 134 F g-1 with the polymerization temperature of 110 °C.

The Effects of Doping and Processing on the Thermoelectric Properties of Platinum Diantimonide Based Materials for Cryogenic Peltier Cooling Applications

NASA Astrophysics Data System (ADS)

Waldrop, Spencer Laine

The study of thermoelectrics is nearly two centuries old. In that time a large number of applications have been discovered for these materials which are capable of transforming thermal energy into electricity or using electrical work to create a thermal gradient. Current use of thermoelectric materials is in very niche applications with contemporary focus being upon their capability to recover waste heat. A relatively undeveloped region for thermoelectric application is focused upon Peltier cooling at low temperatures. Materials based on bismuth telluride semiconductors have been the gold standard for close to room temperature applications for over sixty years. For applications below room temperature, semiconductors based on bismuth antimony reign supreme with few other possible materials. The cause of this diculty in developing new, higher performing materials is due to the interplay of the thermoelectric properties of these materials. The Seebeck coecient, which characterizes the phenomenon of the conversion of heat to electricity, the electrical conductivity, and the thermal conductivity are all interconnected properties of a material which must be optimized to generate a high performance thermoelectric material. While for above room temperature applications many advancements have been made in the creation of highly ecient thermoelectric materials, the below room temperature regime has been stymied by ill-suited properties, low operating temperatures, and a lack of research. The focus of this work has been to investigate and optimize the thermoelectric properties of platinum diantimonide, PtSb2, a nearly zero gap semiconductor. The electronic properties of PtSb2 are very favorable for cryogenic Peltier applications, as it exhibits good conductivity and large Seebeck coecient below 200 K. It is shown that both n- and p-type doping may be applied to this compound to further improve its electronic properties. Through both solid solution formation and processing techniques, the thermal conductivity may be reduced in order to increase the thermoelectric gure of merit. Further reduction in thermal conductivity using other novel approaches is identied as an area of promising future research. Continued development of this material has the potential to generate a suitable replacement for some low temperature applications, but will certainly further scientic knowledge and understanding of the optimization of thermoelectric materials in this temperature regime.

Design of a low-cost system for electrical conductivity measurements of high temperature

NASA Astrophysics Data System (ADS)

Singh, Yadunath

2018-05-01

It is always a curiosity and interest among researchers working in the field of material science to know the impact of high temperature on the physical and transport properties of the materials. In this paper, we report on the design and working of a system for the measurements of electrical resistivity with high temperature. It was designed at our place and successively used for these measurements in the temperature range from room temperature to 500 ˚C.

Room temperature magnetoelectric coupling and electrical properties of Ni doped Co - ferrite - PZT nanocomposites

NASA Astrophysics Data System (ADS)

Chakraborty, Sarit; Mandal, S. K.; Dey, P.; Saha, B.

2018-04-01

Multiferroic magnetoelectric materials are very interesting for the researcher for the potential application in device preparation. We have prepared 0.3Ni0.5Co0.5Fe2O4 - 0.7PbZr0.58Ti0.42O3 magnetoelectric nanocomposites through chemical pyrophoric reaction process followed by solid state reaction and represented magnetoelectric coupling coefficient, thermally and magnetically tunable AC electrical properties. For the structural characterization XRD pattern and SEM micrograph have been analyzed. AC electrical properties reveal that the grain boundaries resistances are played dominating role in the conduction process in the system. Dielectric studies are represents that the dielectric polarization is decreased with frequency as well as magnetic field where it increases with increasing temperature. The dielectric profiles also represents the electromechanical resonance at a frequency of ˜183 kHz. High dielectric constant and low dielectric loss at room temperature makes the material very promising for the application of magnetic field sensor devices.

Electrical transport properties of small diameter single-walled carbon nanotubes aligned on ST-cut quartz substrates

PubMed Central

2014-01-01

A method is introduced to isolate and measure the electrical transport properties of individual single-walled carbon nanotubes (SWNTs) aligned on an ST-cut quartz, from room temperature down to 2 K. The diameter and chirality of the measured SWNTs are accurately defined from Raman spectroscopy and atomic force microscopy (AFM). A significant up-shift in the G-band of the resonance Raman spectra of the SWNTs is observed, which increases with increasing SWNTs diameter, and indicates a strong interaction with the quartz substrate. A semiconducting SWNT, with diameter 0.84 nm, shows Tomonaga-Luttinger liquid and Coulomb blockade behaviors at low temperatures. Another semiconducting SWNT, with a thinner diameter of 0.68 nm, exhibits a transition from the semiconducting state to an insulating state at low temperatures. These results elucidate some of the electrical properties of SWNTs in this unique configuration and help pave the way towards prospective device applications. PMID:25170326

Thermal conversion of electronic and electrical properties of AuCl3-doped single-walled carbon nanotubes.

PubMed

Yoon, Seon-Mi; Kim, Un Jeong; Benayad, Anass; Lee, Il Ha; Son, Hyungbin; Shin, Hyeon-Jin; Choi, Won Mook; Lee, Young Hee; Jin, Yong Wan; Lee, Eun-Hong; Lee, Sang Yoon; Choi, Jae-Young; Kim, Jong Min

2011-02-22

By using carbon-free inorganic atomic layer involving heat treatment from 150 to 300 °C, environmentally stable and permanent modulation of the electronic and electrical properties of single-walled carbon nanotubes (SWCNTs) from p-type to ambi-polar and possibly to n-type has been demonstrated. At low heat treatment temperature, a strong p-doping effect from Au(3+) ions to CNTs due to a large difference in reduction potential between them is dominant. However at higher temperature, the gold species are thermally reduced, and thermally induced CNT-Cl finally occurs by the decomposition reaction of AuCl(3). Thus, in the AuCl(3)-doped SWCNTs treated at higher temperature, the p-type doping effect is suppressed and an n-type property from CNT-Cl is thermally induced. Thermal conversion of the majority carrier type of AuCl(3)-doped SWNTs is systematically investigated by combining various optical and electrical tools.

Experimental Study on the Electrical Conductivity of Pyroxene Andesite at High Temperature and High Pressure

NASA Astrophysics Data System (ADS)

Hui, KeShi; Dai, LiDong; Li, HePing; Hu, HaiYing; Jiang, JianJun; Sun, WenQing; Zhang, Hui

2017-03-01

The electrical conductivity of pyroxene andesite was in situ measured under conditions of 1.0-2.0 GPa and 673-1073 K using a YJ-3000t multi-anvil press and Solartron-1260 Impedance/Gain-phase analyzer. Experimental results indicate that the electrical conductivities of pyroxene andesite increase with increasing temperature, and the electrical conductivities decrease with the rise of pressure, and the relationship between electrical conductivity ( σ) and temperature ( T) conforms to an Arrhenius relation within a given pressure and temperature range. When temperature rises up to 873-923 K, the electrical conductivities of pyroxene andesite abruptly increase, and the activation enthalpy increases at this range, which demonstrates that pyroxene andesite starts to dehydrate. By the virtue of the activation enthalpy (0.35-0.42 eV) and the activation volume (-6.75 ± 1.67 cm3/mole) which characterizes the electrical properties of sample after dehydration, we consider that the conduction mechanism is the small polaron conduction before and after dehydration, and that the rise of carrier concentration is the most important reason of increased electrical conductivity.

Surface-properties relationship in sputtered Ag thin films: Influence of the thickness and the annealing temperature in nitrogen

NASA Astrophysics Data System (ADS)

Guillén, C.; Herrero, J.

2015-01-01

Metal layers with high roughness and electrical conductivity are required as back-reflector electrodes in several optoelectronic devices. The metal layer thickness and the process temperature should be adjusted to reduce the material and energetic costs for the electrode preparation. Here, Ag thin films with thickness ranging from 30 to 200 nm have been deposited by sputtering at room temperature on glass substrates. The structure, morphology, optical and electrical properties of the films have been analyzed in the as-grown conditions and after thermal treatment in flowing nitrogen at various temperatures in the 150-550 °C range. The surface texture has been characterized by the root-mean-square roughness and the correlation length coefficients, which are directly related to the electrical resistivity and the light-scattering parameter (reflectance haze) for the various samples. The increment in the reflectance haze has been used to detect surface agglomeration processes that are found dependent on both the film thickness and the annealing temperature. A good compromise between light-scattering and electrical conductivity has been achieved with 70 nm-thick Ag films after 350 °C heating.

Microscopic origin of electric-field-induced modulation of Curie temperature in cobalt

NASA Astrophysics Data System (ADS)

Ando, Fuyuki; Yamada, Kihiro T.; Koyama, Tomohiro; Ishibashi, Mio; Shiota, Yoichi; Moriyama, Takahiro; Chiba, Daichi; Ono, Teruo

2018-07-01

The Curie temperature T C is one of the most fundamental physical properties of ferromagnetic materials and can be described by the Weiss molecular field theory with the exchange interaction of neighboring atoms. Here, we demonstrate the electrical control of exchange coupling in cobalt films through direct magnetization measurements. We find that the reduction in magnetization with temperature, which is caused by thermal spin wave excitation and scales with Bloch’s law, clearly depends on the applied electric field. Furthermore, we confirm that the correlation between the electric-field-induced modulation of T C and that of exchange coupling follows the Weiss molecular field theory.

Temperature Dependent Electrical Properties of PZT Wafer

NASA Astrophysics Data System (ADS)

Basu, T.; Sen, S.; Seal, A.; Sen, A.

2016-04-01

The electrical and electromechanical properties of lead zirconate titanate (PZT) wafers were investigated and compared with PZT bulk. PZT wafers were prepared by tape casting technique. The transition temperature of both the PZT forms remained the same. The transition from an asymmetric to a symmetric shape was observed for PZT wafers at higher temperature. The piezoelectric coefficient (d 33) values obtained were 560 pc/N and 234 pc/N, and the electromechanical coupling coefficient (k p) values were 0.68 and 0.49 for bulk and wafer, respectively. The reduction in polarization after fatigue was only ~3% in case of PZT bulk and ~7% for PZT wafer.

Synthesis and electrical properties of (LiCo 3/5Fe 1/5Mn 1/5)VO 4 ceramics

NASA Astrophysics Data System (ADS)

Ram, Moti

2010-03-01

(LiCo 3/5Fe 1/5Mn 1/5)VO 4 ceramic was synthesized via solution-based chemical method. X-ray diffraction analysis was carried out on the synthesized powder sample at room temperature, which confirms the orthorhombic structure with the lattice parameters of a = 10.3646 (20) Å, b = 3.7926 (20) Å, c = 9.2131 (20) Å. Field emission scanning electron microscopic analysis was carried out on the sintered pellet sample that indicates grains of unequal sizes (˜0.1 to 2 μm) presents average grains size with polydisperse distribution on the surface of the ceramic. Complex impedance spectroscopy (CIS) technique is used for the study of electrical properties. CIS analysis identifies: (i) grain interior, grain boundary and electrode-material interface contributions to electrical response (ii) the presence of temperature dependent electrical relaxation phenomena in the ceramics. Detailed conductivity study indicates that electrical conduction in the material is a thermally activated process. The variation of A.C. conductivity with frequency at different temperatures obeys Jonscher's universal law.

Synthesis and characterization of nickel oxide particulate annealed at different temperatures

NASA Astrophysics Data System (ADS)

Sharma, Khem Raj; Thakur, Shilpa; Negi, N. S.

2018-04-01

Nickel oxide has been synthesized by solution combustion technique. The nickel oxide ceramic was annealed at 600°C and 1000°C for 2 hours. Structural, electrical, dielectric and magnetic properties were analyzed which are strongly dependent upon the synthesis method. Structural properties were examined by X-ray diffractometer (XRD), which confirmed the purity and cubic phase of nickel oxide. XRD data reveals the increase in crystallite size and decrease in full width half maximum (FWHM) as the annealing temperature increases. Electrical conductivity is found to increase from 10-6 to 10-5 (Ω-1cm-1) after annealing. Dielectric constant is observed to increase from 26 to 175 when the annealing temperature is increased from 600°C to 1000°C. Low value of coercive field is found which shows weak ferromagnetic behavior of NiO. It is observed that all the properties of NiO particulate improve with increasing annealing temperature.

Temperature Dependent Electrical Transport Properties of Ni-Cr and Co-Cr Binary Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thakore, B. Y.; Khambholja, S. G.; Bhatt, N. K.

2011-12-12

The temperature dependent electrical transport properties viz. electrical resistivity and thermal conductivity of Ni{sub 10}Cr{sub 90} and Co{sub 20}Cr{sub 80} alloys are computed at various temperatures. The electrical resistivity has been calculated according to Faber-Ziman model combined with Ashcroft-Langreth partial structure factors. In the present work, to include the ion-electron interaction, we have used a well tested local model potential. For exchange-correlation effects, five different forms of local field correction functions due to Hartree (H), Taylor (T), Ichimaru and Utsumi (IU), Farid et al (F) and Sarkar et al (S) are used. The present results due to S function aremore » in good agreement with the experimental data as compared to results obtained using other four functions. The S functions satisfy compressibility sum rule in long wave length limit more accurately as compared to T, IU and F functions, which may be responsible for better agreement of results, obtained using S function. Also, present result confirms the validity of present approach in determining the transport properties of alloys like Ni-Cr and Co-Cr.« less

Spin-Precession Organic Magnetic Sensor

DTIC Science & Technology

2012-06-01

magnetically— a new half-metal CFAS that has desirable properties for use at room temperature; (2) fabricated several nonlocal devices with CFAS and polymer...400 600 800 1000 1200 0 200 400 600 800 Temperature ( C) M s (e m u /c c) One-Step Two-Step Figure 2: Magnetic properties of CFAS layers measured...temperature-independent for the two-step process. We also measured the transport properties of CFAS layers. The electrical resistivity is small (~60

Effect of annealing temperatures on the electrical conductivity and dielectric properties of Ni1.5Fe1.5O4 spinel ferrite prepared by chemical reaction at different pH values

NASA Astrophysics Data System (ADS)

Aneesh Kumar, K. S.; Bhowmik, R. N.

2017-12-01

The electrical conductivity and dielectric properties of Ni1.5Fe1.5O4 ferrite has been controlled by varying the annealing temperature of the chemical routed samples. The frequency activated conductivity obeyed Jonscher’s power law and universal scaling suggested semiconductor nature. An unusual metal like state has been revealed in the measurement temperature scale in between two semiconductor states with different activation energy. The metal like state has been affected by thermal annealing of the material. The analysis of electrical impedance and modulus spectra has confirmed non-Debye dielectric relaxation with contributions from grains and grain boundaries. The dielectric relaxation process is thermally activated in terms of measurement temperature and annealing temperature of the samples. The hole hopping process, due to presence of Ni3+ ions in the present Ni rich ferrite, played a significant role in determining the thermal activated conduction mechanism. This work has successfully applied the technique of a combined variation of annealing temperature and pH value during chemical reaction for tuning electrical parameters in a wide range; for example dc limit of conductivity ~10-4-10-12 S cm-1, and unusually high activation energy ~0.17-1.36 eV.

Magnetic and electrical properties of dhcp NpPd3 and (U1-xNpx)Pd3

NASA Astrophysics Data System (ADS)

Walker, H. C.; McEwen, K. A.; Boulet, P.; Colineau, E.; Griveau, J.-C.; Rebizant, J.; Wastin, F.

2007-11-01

We have made an extensive study of the magnetic and electrical properties of double-hexagonal close-packed NpPd3 and a range of (U1-xNpx)Pd3 compounds with x=0.01 , 0.02, 0.05, and 0.50 using magnetization, magnetic susceptibility, electrical resistivity, and heat capacity measurements on polycrystalline samples, performed in the temperature range 2-300K and in magnetic fields up to 9T . Two transitions are observed in NpPd3 at T=10 and 30K . Dilute Np samples (x⩽0.05) exhibit quadrupolar transitions, with the transition temperatures reduced from those of pure UPd3 .

Electromechanical coupling and temperature-dependent polarization reversal in piezoelectric ceramics.

PubMed

Weaver, Paul M; Cain, Markys G; Correia, Tatiana M; Stewart, Mark

2011-09-01

Electrostriction plays a central role in describing the electromechanical properties of ferroelectric materials, including widely used piezoelectric ceramics. The piezoelectric properties are closely related to the underlying electrostriction. Small-field piezoelectric properties can be described as electrostriction offset by the remanent polarization which characterizes the ferroelectric state. Indeed, even large-field piezoelectric effects are accurately accounted for by quadratic electrostriction. However, the electromechanical properties deviate from this simple electrostrictive description at electric fields near the coercive field. This is particularly important for actuator applications, for which very high electromechanical coupling can be obtained in this region. This paper presents the results of an experimental study of electromechanical coupling in piezoelectric ceramics at electric field strengths close to the coercive field, and the effects of temperature on electromechanical processes during polarization reversal. The roles of intrinsic ferroelectric strain coupling and extrinsic domain processes and their temperature dependence in determining the electromechanical response are discussed.

The electrical properties of zero-gravity processed immiscibles

NASA Technical Reports Server (NTRS)

Lacy, L. L.; Otto, G. H.

1974-01-01

When dispersed or mixed immiscibles are solidified on earth, a large amount of separation of the constituents takes place due to differences in densities. However, when the immiscibles are dispersed and solidified in zero-gravity, density separation does not occur, and unique composite solids can be formed with many new and promising electrical properties. By measuring the electrical resistivity and superconducting critical temperature, Tc, of zero-g processed Ga-Bi samples, it has been found that the electrical properties of such materials are entirely different from the basic constituents and the ground control samples. Our results indicate that space processed immiscible materials may form an entirely new class of electronic materials.

Effects of sintering temperature on electrical properties of sheep enamel hydroxyapatite

NASA Astrophysics Data System (ADS)

Dumludag, F.; Gunduz, O.; Kılıc, O.; Kılıc, B.; Ekren, N.; Kalkandelen, C.; Oktar, F. N.

2017-12-01

Bioceramics, especially calcium phosphate based bioceramics, whose examples are hydroxyapatite, and calcium phosphate powders have been widely used in the biomedical engineering applications. Hydroxyapatite (HA) is one of the most promising biomaterials, which are derived from natural sources, chemical method, animal like dental enamel and corals. The influence of sintering temperature on the electrical properties (i.e. DC conductivity, AC conductivity) of samples of sintered sheep enamel (SSSE) was studied in air and in vacuum ambient at room temperature. The sheep enamel were sintered at varying temperatures between 1000°C and 1300°C. DC conductivity results revealed that while dc conductivity of the SSSE decreases with increasing the sintering temperature in air ambient the values increased with increasing the sintering temperature in vacuum ambient. AC conductivity measurements were performed in the frequency range of 40 Hz - 105 Hz. The results showed that ac conductivity values decrease with increasing the sintering temperature.

Specific features of electrical properties of porous biocarbons prepared from beech wood and wood artificial fiberboards

NASA Astrophysics Data System (ADS)

Popov, V. V.; Orlova, T. S.; Magarino, E. Enrique; Bautista, M. A.; Martínez-Fernández, J.

2011-02-01

This paper reports on comparative investigations of the structural and electrical properties of biomorphic carbons prepared from natural beech wood, as well as medium-density and high-density fiberboards, by means of carbonization at different temperatures T carb in the range 650-1000°C. It has been demonstrated using X-ray diffraction analysis that biocarbons prepared from medium-density and high-density fiberboards at all temperatures T carb contain a nanocrystalline graphite component, namely, three-dimensional crystallites 11-14 Å in size. An increase in the carbonization temperature T carb to 1000°C leads to the appearance of a noticeable fraction of two-dimensional graphene particles with the same sizes. The temperature dependences of the electrical resistivity ρ of the biomorphic carbons have been measured and analyzed in the temperature range 1.8-300 K. For all types of carbons under investigation, an increase in the carbonization temperature T carb from 600 to 900°C leads to a change in the electrical resistivity at T = 300 K by five or six orders of magnitude. The dependences ρ( T) for these materials are adequately described by the Mott law for the variable-range hopping conduction. It has been revealed that the temperature dependence of the electrical resistivity exhibits a hysteresis, which has been attributed to thermomechanical stresses in an inhomogeneous structure of the biocarbon prepared at a low carbonization temperature T carb. The crossover to the conductivity characteristic of disordered metal systems is observed at T carb ≳ 1000°C.

Temperature effects on polymer-carbon composite sensors

NASA Technical Reports Server (NTRS)

Lim, J. R.; Homer, M. L.; Manatt, K.; Kisor, A.; Lara, L.; Jewell, A. D.; Shevade, A.; Ryan, M. A.

2003-01-01

At JPL we have investigated the effects of temperature on polymer-carbon black composite sensors. While the electrical properties of polymer composites have been studied, with mechanisms of conductivity described by connectivity and tunneling, it is not fully understood how these properties affect sensor characteristics and responses.

Physical and Electrical Characterization of Aluminum Polymer Capacitors

NASA Technical Reports Server (NTRS)

Liu, David; Sampson, Michael J.

2010-01-01

Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were physically examined and electrically characterized. The physical construction analysis of the capacitors revealed three different capacitor structures, i.e., traditional wound, stacked, and laminated. Electrical characterization results of polymer aluminum capacitors are reported for frequency-domain dielectric response at various temperatures, surge breakdown voltage, and other dielectric properties. The structure-property relations in polymer aluminum capacitors are discussed.

Physical and Electrical Characterization of Polymer Aluminum Capacitors

NASA Technical Reports Server (NTRS)

Liu, David; Sampson, Michael J.

2010-01-01

Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were physically examined and electrically characterized. The physical construction analysis of the capacitors revealed three different capacitor structures, i.e., traditional wound, stacked, and laminated. Electrical characterization results of polymer aluminum capacitors are reported for frequency-domain dielectric response at various temperatures, surge breakdown voltage, and other dielectric properties. The structure-property relations in polymer aluminum capacitors are discussed.

Electrical properties of lunar soil sample 15301,38

NASA Technical Reports Server (NTRS)

Olhoeft, G. R.; Frisillo, A. L.; Strangway, D. W.

1974-01-01

Electrical property measurements have been made on an Apollo 15 lunar soil sample in ultrahigh vacuum from room temperature to 827 C for the frequency spectrum from 100 Hz through 1 MHz. The dielectric constant, the total ac loss tangent, and the dc conductivity were measured. The dc conductivity showed no thermal hysteresis, but an irreversible (in vacuum) thermal effect was found in the dielectric loss tangent on heating above 700 C and during the subsequent cooling. This appears to be related to several effects associated with lunar glass above 700 C. The sample also showed characteristic low-frequency dispersion in the dielectric constant with increasing temperature, presumably due to Maxwell-Wagner intergranular effects. The dielectric properties may be fitted to a model involving a Cole-Cole frequency distribution that is relatively temperature-independent below 200 C and follows a Boltzmann temperature distribution with an activation energy of 2.5 eV above 200 C. The dc conductivity is fitted by an exponential temperature distribution and becomes the dominant loss above 700 C.

Turkey's High Temperature Geothermal Energy Resources and Electricity Production Potential

NASA Astrophysics Data System (ADS)

Bilgin, Ö.

2012-04-01

Turkey is in the first 7 countries in the world in terms of potential and applications. Geothermal energy which is an alternative energy resource has advantages such as low-cost, clean, safe and natural resource. Geothermal energy is defined as hot water and steam which is formed by heat that accumulated in various depths of the Earth's crust; with more than 20oC temperature and which contain more than fused minerals, various salts and gases than normal underground and ground water. It is divided into three groups as low, medium and high temperature. High-temperature fluid is used in electricity generation, low and medium temperature fluids are used in greenhouses, houses, airport runways, animal farms and places such as swimming pools heating. In this study high temperature geothermal fields in Turkey which is suitable for electricity production, properties and electricity production potential was investigated.

Design Requirements for Amorphous Piezoelectric Polymers

NASA Technical Reports Server (NTRS)

Ounaies, Z.; Young, J. A.; Harrison, J. S.

1999-01-01

An overview of the piezoelectric activity in amorphous piezoelectric polymers is presented. The criteria required to render a polymer piezoelectric are discussed. Although piezoelectricity is a coupling between mechanical and electrical properties, most research has concentrated on the electrical properties of potentially piezoelectric polymers. In this work, we present comparative mechanical data as a function of temperature and offer a summary of polarization and electromechanical properties for each of the polymers considered.

Electrical properties of materials for high temperature strain gage applications

NASA Technical Reports Server (NTRS)

Brittain, John O.

1989-01-01

A study was done on the electrical resistance of materials that are potentially useful as resistance strain gages at high temperatures under static strain conditions. Initially a number of binary alloys were investigated. Later, third elements were added to these alloys, all of which were prepared by arc melting. Several transition metals were selected for experimentation, most prepared as thin films. Difficulties with electrical contacts thwarted efforts to extend measurements to the targeted 1000 C, but results obtained did suggest ways of improving the electrical resistance characteristics of certain materials.

Lightweight magnesium nanocomposites: electrical conductivity of liquid magnesium doped by CoPd nanoparticles

NASA Astrophysics Data System (ADS)

Yakymovych, Andriy; Slabon, Adam; Plevachuk, Yuriy; Sklyarchuk, Vasyl; Sokoliuk, Bohdan

2018-04-01

The effect of monodisperse bimetallic CoPd NP admixtures on the electrical conductivity of liquid magnesium was studied. Temperature dependence of the electrical conductivity of liquid Mg98(CoPd)2, Mg96(CoPd)4, and Mg92(CoPd)8 alloys was measured in a wide temperature range above the melting point by a four-point method. It was shown that the addition of even small amount of CoPd nanoparticles to liquid Mg has a significant effect on the electrical properties of the melts obtained.

Multiferroic properties of Indian natural ilmenite

NASA Astrophysics Data System (ADS)

Acharya, Truptimayee; Choudhary, R. N. P.

2017-03-01

In this communication, the main results and analysis of extensive studies of electric and magnetic characteristics (relative dielectric constant, tangent loss, electric polarization, electric transport, impedance, magnetic polarization and magneto-electric coupling coefficient) of Indian natural ilmenite (NI) have been presented. Preliminary structural analysis was studied by Rietveld refinement of room temperature XRD data, which suggests the rhombohedral crystal system of NI. Maxwell-Wagner mechanism was used to explain the nature of the frequency dependence of the relative dielectric constant. The impedance analysis reveals that below 270 °C, only the bulk contributes, whereas at higher temperature, both grain boundary and the bulk contribute to the resistive characteristics of the material. The magnitude of the depression angles of the semicircles in the Nyquist plot has been estimated. The correlated barrier hopping model has been used to explain the frequency dependence of ac conductivity of the material. The activation energy of the compound has been estimated using the temperature dependence of dc conductivity plot. The obtained polarization hysteresis loops manifest improper ferroelectric behavior of NI. The existence M-H hysteresis loop supports anti-ferromagnetism in the studied material. The magneto-electric voltage coupling coefficient is found to be 0.7 mV/cm Oe. Hence, other than dielectric constant, electric polarization, magnetization and magneto-electric studies support the existence of multiferroic properties in NI.

Thermocouple shield

DOEpatents

Ripley, Edward B [Knoxville, TN

2009-11-24

A thermocouple shield for use in radio frequency fields. In some embodiments the shield includes an electrically conductive tube that houses a standard thermocouple having a thermocouple junction. The electrically conductive tube protects the thermocouple from damage by an RF (including microwave) field and mitigates erroneous temperature readings due to the microwave or RF field. The thermocouple may be surrounded by a ceramic sheath to further protect the thermocouple. The ceramic sheath is generally formed from a material that is transparent to the wavelength of the microwave or RF energy. The microwave transparency property precludes heating of the ceramic sheath due to microwave coupling, which could affect the accuracy of temperature measurements. The ceramic sheath material is typically an electrically insulating material. The electrically insulative properties of the ceramic sheath help avert electrical arcing, which could damage the thermocouple junction. The electrically conductive tube is generally disposed around the thermocouple junction and disposed around at least a portion of the ceramic sheath. The concepts of the thermocouple shield may be incorporated into an integrated shielded thermocouple assembly.

Electrical and Thermal Transport Property Studies of High-Temperature Thermoelectric Materials.

DTIC Science & Technology

1985-06-01

THERMAL TRANSPORT PROPERTY STUDIES OF HIGH-TEMPERATURE THERMOELECTRIC MATERIALS: INTERIM TECHNICAL REPORT FOR THE PERIOD MAY 15, 1984 TO MAY 15, 1985 J. L...transport property data base has been expanded oy continued measurements in several systems under study, and a theoretical model for thermoelectric ...6.0 REFERENCES . . . . . . . . . . . . 6.1 APPENDIX A - THERMOELECTRIC PROPERTY DATA . . . . . . . A. I 1l FIGURES 3.1 Dimensionless Figure of Merit

Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Sobri, M.; Shuhaimi, A.; Hakim, K. M.; Ganesh, V.; Mamat, M. H.; Mazwan, M.; Najwa, S.; Ameera, N.; Yusnizam, Y.; Rusop, M.

2014-06-01

Nickel (Ni)/indium tin oxide (ITO) nanostructures were deposited on glass and silicon (1 1 1) substrates by RF magnetron sputtering using nickel and ITO (In-Sn, 90-10%) targets. The post-deposition annealing has been performed for Ni/ITO films in air. The effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. We found the appearance of (6 2 2) peak in addition to (4 0 0) and (2 2 2) major peaks, which indicates an enhancement of the film crystallinity at high temperature annealing of 650 °C. The samples show higher transmittance of more than 90% at 470 nm after annealing which is suitable for blue light emitting diode (LED) application. The optical energy bandgap is shifted from 3.51 to 3.65 eV for the Ni/ITO film after annealing at 650 °C. In addition, increasing the annealing temperature improves the film electrical properties. The resistivity value decreases from 3.77 × 10-5 Ω cm to 1.09 × 10-6 Ω cm upon increasing annealing temperature.

Synthesis and characterization of γ-Fe2O3 NPs on silicon substrate for power device application

NASA Astrophysics Data System (ADS)

Hussein Nurul Athirah, Abu; Bee Chin, Ang; Yew Hoong, Wong; Boon Hoong, Ong; Aainaa Aqilah, Baharuddin

2018-06-01

Maghemite nanoparticles (γ-Fe2O3 NPs) were synthesized using Massart procedure. The formation reaction were optimized by varying the concentration of ferric nitrate solution (Fe(NO3)3) (0.1, 0.3, 0.5, 0.7 and 1.0 M). All samples were characterized by means of x-ray Diffractometer (XRD), Raman Spectroscopy, Transmission Electron Microscope (TEM) and Alternating Gradient Magnetometer (AGM). The smallest size of the NPs were chosen to be deposited on Silicon (100) substrate by spin coating technique. Annealing process of the samples were performed in Argon ambient at different temperatures (600, 700, 800 and 900°) for 20 min. Metal-oxide-semiconductor capacitors were then fabricated by depositing Aluminium as the gate electrode. The effect of the annealing process on the structural and electrical properties of γ-Fe2O3 NPs thin film were investigated. The structural properties of the deposited thin film were evaluated by XRD analysis, Atomic Force Microscopy (AFM) and Raman Analysis. On the other hand, the electrical properties was conducted by current-voltage analysis. It was revealed that the difference in the annealing temperature affect the grain size, surface roughness, distribution of the nanoparticles as well as the electrical performance of the samples where low annealing temperature (600 °C) gives low leakage current while high annealing temperature (900 °C) gives high electrical breakdown.

Advanced Capacitor with SiC for High Temperature Applications

NASA Astrophysics Data System (ADS)

Tsao, B. H.; Ramalingam, M. L.; Bhattacharya, R. S.; Carr, Sandra Fries

1994-07-01

An advanced capacitor using SiC as the dielectric material has been developed for high temperature, high power, and high density electronic components for aircraft and aerospace application. The conventional capacitor consists of a large number of metallized polysulfone films that are arranged in parallel and enclosed in a sealed metal case. However, problems with electrical failure, thermal failure, and dielectric flow were experienced by Air Force suppliers for the component and subsystem for lack of suitable properties of the dielectric material. The high breakdown electrical field, high thermal conductivity, and high temperature operational resistance of SiC compared to similar properties of the conventional ceramic and polymer capacitor would make it a better choice for a high temperature, and high power capacitor. The quality of the SiC film was evaluated. The electrical parameters, such as the capacitance, dissipation factor, equivalent series resistance, and dielectric withstand voltage, were evaluated. The prototypical capacitors are currently being fabricated using SiC film.

Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

David, Aurelien, E-mail: adavid@soraa.com; Hurni, Christophe A.; Young, Nathan G.

The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.

A model for the scattering of high-frequency electromagnetic fields from dielectrics exhibiting thermally-activated electrical losses

NASA Technical Reports Server (NTRS)

Hann, Raiford E.

1991-01-01

An equivalent circuit model (ECM) approach is used to predict the scattering behavior of temperature-activated, electrically lossy dielectric layers. The total electrical response of the dielectric (relaxation + conductive) is given by the ECM and used in combination with transmission line theory to compute reflectance spectra for a Dallenbach layer configuration. The effects of thermally-activated relaxation processes on the scattering properties is discussed. Also, the effect of relaxation and conduction activation energy on the electrical properties of the dielectric is described.

Densification and Electrical Properties of Zinc Oxide Varistors Microwave-Sintered Under Different Oxygen Partial Pressures

NASA Astrophysics Data System (ADS)

Lin, Cong; Wang, Bo; Xu, Zheng; Peng, Hu

2012-11-01

ZnO varistors were prepared by microwave sintering under different oxygen partial pressures. The temperature profile and the densification behavior in different atmospheres were investigated. It was found that the density of ZnO varistors during sintering was the key factor affecting the absorption of microwave energy. The electrical properties, including the nonlinear properties and capacitance-voltage ( C- V) characteristics, were also carefully studied. The results showed that the oxygen partial pressure has significant effects on the electrical properties of ZnO varistors by changing the concentration of defects through a series of reactions involving oxygen during sintering.

Effect of orientation on electrically conducting thermoplastic composite properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Genetti, W.B.; Grady, B.P.

1996-10-01

Properties of electrically conducting composites made from low density polyethylene (LDPE), high density polyethylene (HDPE), and polypropylene (PP) filled with nickel flake are being studied as a function of nickel concentration and draw ratio. The effect on electrical conduction, crystallinity, melt temperature, tensile modulus, and elongation at break are being tested. The melt temperature increases with increasing nickel concentration. The electrical conduction increases slowly with increased nickel concentration to the percolation volume fraction, then increases sharply. Orientation by uniaxial stretching of the films should allow conductive pathways to form throughout the polymer more easily by forcing particles closer together, thusmore » reducing the percolation volume fraction. This process could be caused by both alignment of the polymer chains and by stress induced crystallization that forces the particles into smaller amorphous regions.« less

Temperature-dependent impedance spectroscopy of La0.8Sr0.2FeO3 nano-crystalline material

NASA Astrophysics Data System (ADS)

Kafa, C. A.; Triyono, D.; Laysandra, H.

2017-04-01

LaFeO3 is a material with perovskite structure which electrical properties frequently investigated. Research are done due to the exhibition of excellent gas sensing behavior through resistivity comparison from the p-type semiconductor. Sr doping on LaFeO3 or La1-xSrxFeO3 are able to improve the electrical conductivity through structural modification. Using Sr dopant concentration (x) of 0.2, La0.8Sr0.2FeO3 nano-crystal pellet was synthesized. The synthesis used sol-gel method, followed by gradual heat treatment and uniaxial compaction. XRD characterization shows that the structure of the sample is Orthorhombic Perovskite. Topography of the sample by SEM reveals grain and grain boundary existence with emerging agglomeration. The electrical properties of the material, as functions of temperature and frequency, were measured by Impedance Spectroscopy method using RLC meter, for temperatures of 303-373K. Through the Nyquist plot and Bode plot, the electrical conductivity of La0.8Sr0.2FeO3 is contributed by the grain and grain boundary. Finally, the electrical permittivities of La0.8Sr0.2FeO3 are increasing with temperature increase, with the highest achieved when measured at 1 kHz frequency.

Electron drift velocity and mobility in graphene

NASA Astrophysics Data System (ADS)

Dong, Hai-Ming; Duan, Yi-Feng; Huang, Fei; Liu, Jin-Long

2018-04-01

We present a theoretical study of the electric transport properties of graphene-substrate systems. The drift velocity, mobility, and temperature of the electrons are self-consistently determined using the Boltzmann equilibrium equations. It is revealed that the electronic transport exhibits a distinctly nonlinear behavior. A very high mobility is achieved with the increase of the electric fields increase. The electron velocity is not completely saturated with the increase of the electric field. The temperature of the hot electrons depends quasi-linearly on the electric field. In addition, we show that the electron velocity, mobility, and electron temperature are sensitive to the electron density. These findings could be employed for the application of graphene for high-field nano-electronic devices.

Dynamic measurements of thermophysical properties of metals and alloys at high temperatures by subsecond pulse heating techniques

NASA Technical Reports Server (NTRS)

Cezairliyan, Ared

1993-01-01

Rapid (subsecond) heating techniques developed at the National Institute of Standards and Technology for the measurements of selected thermophysical and related properties of metals and alloys at high temperatures (above 1000 C) are described. The techniques are based on rapid resistive self-heating of the specimen from room temperature to the desired high temperature in short times and measuring the relevant experimental quantities, such as electrical current through the specimen, voltage across the specimen, specimen temperature, length, etc., with appropriate time resolution. The first technique, referred to as the millisecond-resolution technique, is for measurements on solid metals and alloys in the temperature range 1000 C to the melting temperature of the specimen. It utilizes a heavy battery bank for the energy source, and the total heating time of the specimen is typically in the range of 100-1000 ms. Data are recorded digitally every 0.5 ms with a full-scale resolution of about one part in 8000. The properties that can be measured with this system are as follows: specific heat, enthalpy, thermal expansion, electrical resistivity, normal spectral emissivity, hemispherical total emissivity, temperature and energy of solid-solid phase transformations, and melting temperature (solidus). The second technique, referred to as the microsecond-resolution technique, is for measurements on liquid metals and alloys in the temperature range 1200 to 6000 C. It utilizes a capacitor bank for the energy source, and the total heating time of the specimen is typically in the range 50-500 micro-s. Data are recorded digitally every 0.5 micro-s with a full-scale resolution of about one part in 4000. The properties that can be measured with this system are: melting temperature (solidus and liquidus), heat of fusion, specific heat, enthalpy, and electrical resistivity. The third technique is for measurements of the surface tension of liquid metals and alloys at their melting temperature. It utilizes a modified millisecond-resolution heating system designed for use in a microgravity environment.

Temperature and induced electric field dependence on the phase transition of 9/70/30, 9/65/35 and 9/60/40 PLZT ceramics

NASA Astrophysics Data System (ADS)

Somwan, Siripong; Funsueb, Narit; Limpichaipanit, Apichart; Ngamjarurojana, Athipong

2018-05-01

In this work, Pb0.91La0.09(Zr1-xTix)0.9775O3 ceramics where x = 0.3, 0.35 and 0.4 (the composition near MPB) were prepared by solid solution method. After fabrication process, electrical property was measured by LCR meter. Polarization and induced strain behavior of the samples were investigated by using interferometry technique modified with Sawyer-Tower circuit at various temperatures. The results of dielectric, polarization and induced strain properties were due to the Zr/Ti ratios, which changed their behavior when temperature was varied (30-70 °C). The normal to macro-micro domains to relaxor and paraelectric phase transition was demonstrated which is related to linear or nonlinear increase of polarization and induced strain as a function of applied subswitching electric field.

Contributions of intrinsic and extrinsic polarization species to energy storage properties of Ba0.95Ca0.05Zr0.2Ti0.8O3 ceramics

NASA Astrophysics Data System (ADS)

Zhan, Di; Xu, Qing; Huang, Duan-Ping; Liu, Han-Xing; Chen, Wen; Zhang, Feng

2018-03-01

Ba0.95Ca0.05Zr0.2Ti0.8O3 ceramics were prepared at different sintering temperatures by citrate precursor and solid-state reaction methods, respectively. The crystal structure and microstructure of the specimens were characterized. In view of energy storage capacitor utilizations, the dielectric properties of the specimens were investigated at room temperature as a function of frequency and applied electric field. Moreover, the nature of mobile charge carriers in the specimens was diagnosed by complex impedance spectroscopy at elevated temperatures. While the dielectric constants of the specimens prepared by different methods are quite different (4.4 × 103-2.2 × 104 at 10 kHz) at zero electric field, the energy storage densities at an identical strong electric field are similar (e.g. 0.32-0.41 J/cm3 at 120 kV/cm). The dielectric constants under bias electric field were fitted to a multipolarization mechanism model to resolve the contributions of intrinsic and extrinsic polarization mechanisms. It turned out that the extrinsic contributions fade out within low electric field range (<20 kV/cm) and thereby the intrinsic lattice polarization governs the overall dielectric responses at higher fields. Based on the fitting result, the energy storage properties of the specimens were interpreted.

Thermophysical Properties of GRCop-84

NASA Technical Reports Server (NTRS)

Ellis, David L.; Keller, Dennis J.; Nathal, Michael (Technical Monitor)

2000-01-01

The thermophysical properties and electrical resistivity of GRCop-84 (Cu - 8 at.% Cr-4 at.% Nb) were measured from cryogenic temperatures to near its melting point. The data were analyzed using weighted regression to determine the properties as a function of temperature and assign appropriate confidence intervals. The results showed that the thermal expansion of GRCop-84 was significantly lower than NARloy-Z (Cu-3 wt. % Ag-0.5 wt. % Zr), the currently used thrust cell liner material. The lower thermal expansion is expected to translate into lower thermally induced stresses and increases in thrust cell liner lives between 2X and 41X over NARloy-Z. The somewhat lower thermal conductivity of GRCop-84 can be offset by redesigning the liners to utilize its much greater mechanical properties. Optimized designs are not expected to suffer from the lower thermal conductivity. Electrical resistivity data, while not central to the primary application, show that GRCop-84 has potential for applications where a combination of good electrical conductivity and strength is required.

Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films

NASA Astrophysics Data System (ADS)

Sarath Kumar, S. R.; Abutaha, A. I.; Hedhili, M. N.; Alshareef, H. N.

2012-12-01

A detailed study of the role of oxygen vacancies in determining the effective mass and high temperature (300-1000 K) thermoelectric properties of La-doped epitaxial SrTiO3 thin films is presented. It is observed that at intermediate temperatures, a transition from degenerate to non-degenerate behavior is observed in the Seebeck coefficient, but not electrical conductivity, which is attributed to heterogeneous oxygen non-stoichiometry. Heikes formula is found to be invalid for the films with oxygen vacancies. By fitting the spectroscopic ellipsometry (SE) data, obtained in the range 300-2100 nm, using a Drude-Lorentz dispersion relation with two Lorentz oscillators, the electrical and optical properties of the films are extracted. Using the excellent agreement between the transport properties extracted from SE modeling and direct electrical measurements, we demonstrate that an increase in concentration of oxygen vacancies results in a simultaneous increase of both carrier concentration and electron effective mass, resulting in a higher power factor.

Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure.

PubMed

Zhao, Ying-Ying; Wang, Jing; Kuang, Hao; Hu, Feng-Xia; Liu, Yao; Wu, Rong-Rong; Zhang, Xi-Xiang; Sun, Ji-Rong; Shen, Bao-Gen

2015-04-24

Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.

Spectroscopic and Electrochemical Properties of Lithium-Rich LiFePO4 Cathode Synthesized by Solid-State Reaction

NASA Astrophysics Data System (ADS)

Rosaiah, P.; Hussain, O. M.; Zhu, Jinghui; Qiu, Yejun

2017-08-01

Lithium iron phosphate (Li x FePO4) is synthesized by a solid-state reaction method. The structural, electrical and electrochemical properties are studied in detail. It is found that the increment of lithium concentration (up to x = 1.05) does not affect the structure of LiFePO4 but improves its electrical conductivity as well as electrochemical performance. Surface morphological studies exhibited the formation of rod-like nanoparticles with small size. Electric and dielectric properties are also investigated over a frequency range of 1 Hz-1 MHz at different temperatures. The conductivity increased with increasing temperature, which follows the Arrhenius relation with the activation energy of about 0.31 eV. And the electrochemical tests found that the Li1.05FePO4 cathode possessed improved discharge capacity with better cycling performance.

Carbon monoxide sensor and method of use

DOEpatents

Dutta, Prabir K.; Swartz, Scott L.; Holt, Christopher T.; Revur, Ramachandra Rao

2006-01-10

A sensor and method of use for detection of low levels of carbon monoxide in gas mixtures. The approach is based on the change in an electrical property (for example: resistance) that occurs when carbon monoxide is selectively absorbed by a film of copper chloride (or other metal halides). The electrical property change occurs rapidly with both increasing and decreasing CO contents, varies with the amount of CO from the gas stream, and is insensitive to the presence of hydrogen. To make a sensor using this approach, the metal halide film will deposited onto an alumina substrate with electrodes. The sensor may be maintained at the optimum temperature with a thick film platinum heater deposited onto the opposite face of the substrate. When the sensor is operating at an appropriate (and constant) temperature, the magnitude of the electrical property measured between the interdigital electrodes will provide a measure of the carbon monoxide content of the gas.

Grain boundary dominated electrical conductivity in ultrananocrystalline diamond

NASA Astrophysics Data System (ADS)

Wiora, Neda; Mertens, Michael; Brühne, Kai; Fecht, Hans-Jörg; Tran, Ich C.; Willey, Trevor; van Buuren, Anthony; Biener, Jürgen; Lee, Jun-Sik

2017-10-01

N-type electrically conductive ultrananocrystalline diamond (UNCD) films were deposited using the hot filament chemical vapor deposition technique with a gas mixture of H2, CH4 and NH3. Depending on the deposition temperature and ammonia feed gas concentration, which serves as a nitrogen source, room temperature electrical conductivities in the order of 10-2 to 5 × 101 S/cm and activation energies in the meV range were achieved. In order to understand the origin of the enhanced electrical conductivity and clarify the role of ammonia addition to the process gas, a set of UNCD films was grown by systematically varying the ammonia gas phase concentration. These samples were analyzed with respect to their morphology and electrical properties as well as their carbon and nitrogen bonding environments. Temperature dependent electrical conductivity measurements (300-1200 K) show that the electrical conductivity of the samples increases with temperature. The near edge x-ray absorption fine structure measurements reveal that the electrical conductivity of the UNCD films does not correlate directly with ammonia addition, but depends on the total amount of sp2 bonded carbon in the deposited films.

Evolution of structure and magnetic properties for BaFe11.9Al0.1O19 hexaferrite in a wide temperature range

NASA Astrophysics Data System (ADS)

Trukhanov, A. V.; Trukhanov, S. V.; Panina, L. V.; Kostishyn, V. G.; Kazakevich, I. S.; Trukhanov, An. V.; Trukhanova, E. L.; Natarov, V. O.; Turchenko, V. A.; Salem, M. M.; Balagurov, A. M.

2017-03-01

M-type BaFe11.9Al0.1O19 hexaferrite was successfully synthesized by solid state reactions. Precision investigations of crystal and magnetic structures of BaFe11.9Al0.1O19 powder by neutron diffraction in the temperature range 4.2-730 K have been performed. Magnetic and electrical properties investigations were carried out in the wide temperature range. Neutron powder diffraction data were successfully refined in approximation for both space groups (SG): centrosymmetric #194 (standard non-polar phase) and non-centrosymmetric #186 (polar phase). It has been shown that at low temperatures (below room temperature) better fitting results (value χ2) were for the polar phase (SG: #186) or for the two phases coexistence (SG: #186 and SG: #194). At high temperatures (400-730 K) better fitting results were for SG: #194. It was established coexistence of the dual ferroic properties (specific magnetization and spontaneous polarization) at room temperature. Strong correlation between magnetic and electrical subsystems was demonstrated (magnetoelectrical effect). Temperature dependences of the spontaneous polarization, specific magnetization and magnetoelectrical effect were investigated.

Effect of low temperature regression and aging on structure and properties of Al-B electric round rods

NASA Astrophysics Data System (ADS)

Yan, Jun; Lei, Yuanyuan; Zhang, Xiaoyan; Zhang, Junjie

2018-04-01

The effects of pre-aging temperature (125°C, 135°C, 145°C) and regression time (5min 25min) on Al-B electric round rod were studied by tensile strength test, conductivity test, XRD and SEM. The results showed that the tensile strength of the alloy first increased and then decreased, while the electrical conductivity decreased first and then increased after re-aging treatment. When the regression and re-aging process is 145 °C × 4h+200 °C × 5min+145 °C × 4h, the comprehensive properties of the sample are better, the tensile strength is 78MPa and the conductivity is 63.1% IACS.

Effect of annealing temperature on structural, morphological and electrical properties of nanoparticles TiO{sub 2} thin films by sol-gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muaz, A. K. M.; Hashim, U., E-mail: uda@unimap.edu.my; Arshad, M. K. Md.

2016-07-06

In this paper, the sol-gel method is used to prepare nanoparticles titanium dioxide (TiO{sub 2}) thin films at different annealing temperature. The prepared sol was deposited on the p-SiO{sub 2} substrates by spin coating technique under room temperature. The nanoparticles TiO{sub 2} solution was synthesized using Ti{OCH(CH_3)_2}{sub 4} as a precursor with an methanol solution at a molar ratio 1:10. The prepared TiO{sub 2} sols will further validate through structural, morphological and electrical properties. From the X-ray diffraction (XRD) analysis, as-deposited films was found to be amorphous in nature and tend to transform into tetragonal anatase and rutile phase asmore » the films annealed at 573 and 773 K, respectively. The diversification of the surface roughness was characterized by atomic force microscopy (AFM) indicated the roughness and thickness very dependent on the annealing temperature. The two-point probe electrical resistance and conductance of nanoparticles TiO{sub 2} thin films were determined by the DC current-voltage (IV) analysis. From the I-V measurement, the electrical conductance increased as the films annealed at higher temperature.« less

Study of electrical and magneto-transport properties in La0.5Sr0.5CoO3

NASA Astrophysics Data System (ADS)

Sharma, Gaurav; Tyagi, Shekhar; Rawat, R.; Sathe, V. G.

2018-04-01

Electric and Magneto-Transport properties of La0.5Sr0.5CoO3 have been investigated in the temperature range of 5-300K and under the magnetic field up to 8T. The para- to ferromagnetic transition is reflected in zero field R-T measurements in the form of change in slope. La0.5Sr0.5CoO3 is a well-known cluster glass compound with Tc˜250K. The compound show metallic behavior throughout the whole temperature range of measurement. The compound exhibits negative magneto-resistance around the magnetic ordering temperature due to suppression of spin disorder resistivity. The Seebeck coefficient as a function of temperature is also measured and the results are discussed.

Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal-oxide-semiconductor field effect transistor channels

NASA Astrophysics Data System (ADS)

Grasby, T. J.; Parry, C. P.; Phillips, P. J.; McGregor, B. M.; Morris, , R. J. H.; Braithwaite, G.; Whall, T. E.; Parker, E. H. C.; Hammond, R.; Knights, A. P.; Coleman, P. G.

1999-03-01

Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above. The electrical properties of these structures are poor, and thought to be associated with grown-in point defects as indicated in positron annihilation spectroscopy. However, after an in situ annealing procedure (800 °C for 30 min) the electrical properties dramatically improve, giving an optimum 4 K mobility of 2500 cm2 V-1 s-1 for a sheet density of 6.2×1011 cm-2. The low temperature growth yields highly planar interfaces, which are maintained after anneal as evidenced from transmission electron microscopy. This and secondary ion mass spectroscopy measurements demonstrate that the metastably strained alloy layer can endure the in situ anneal procedure necessary for enhanced electrical properties. Further studies have shown that the layers can also withstand a 120 min thermal oxidation at 800 °C, commensurate with metal-oxide-semiconductor device fabrication.

Electrical wire insulation and electromagnetic coil

DOEpatents

Bich, George J.; Gupta, Tapan K.

1984-01-01

An electromagnetic coil for high temperature and high radiation application in which glass is used to insulate the electrical wire. A process for applying the insulation to the wire is disclosed which results in improved insulation properties.

Potassium Beta-Alumina/Molybdenum/Potassium Electrochemical Cells

NASA Technical Reports Server (NTRS)

Williams, R.; Kisor, A.; Ryan, M.; Nakamura, B.; Kikert, S.; O'Connor, D.

1994-01-01

potassium alkali metal thermal-to-electric converter (K-AMTEC) cells utilizing potassium beta alumina solid electrolyte (K-BASE) are predicted to have improved properties for thermal to electric conversion at somewhat lower temperatures than sodium AMTEC's.

Low-temperature electrical resistivity of transition-metal carbides

NASA Astrophysics Data System (ADS)

Allison, C. Y.; Finch, C. B.; Foegelle, M. D.; Modine, F. A.

1988-10-01

The electrical resistivities of single crystals of ZrC 0.93, VC 0.88, NbC 0.95, and TaC 0.99 were measured from liquid helium temperature to 350 K. The Bloch-Gruneisen theory of electrical resistivity gives a good fit to the zirconium carbide and the vanadium carbide measurements. In contrast, the resistivities of the two superconducting crystals, tantalum carbide and niobium carbide, show excellent agreement with the Wilson model. The appropriate model appears to depend upon the superconducting properties of the crystals.

Correlation between electrical and mechanical properties in La1-xSrxGa1-yMgyO3-δ ceramics used as electrolytes for solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Morales, M.; Roa, J. J.; Perez-Falcón, J. M.; Moure, A.; Tartaj, J.; Espiell, F.; Segarra, M.

2014-01-01

The relation between the electrical and the mechanical properties in Sr and Mg doped LaGaO3 ceramics, which can be used as electrolyte for solid oxide fuel cells, was investigated in terms of hardness and ionic conductivity. For this purpose, ceramic materials corresponding to the compositions of La1-xSrxGa1-yMgyO3-δ (LSGM), with x = 0.1 and y = 0.2, and x = 0.15 and y = 0.2, were prepared. LSGM powders synthesized by the ethylene glycol complex solution method were shaped into disks by isostatic pressing method. The variation in the microstructure of samples was achieved by varying the sintering temperature between 1300 and 1450 °C. While the effect of the different microstructures on the electrical properties of the LSGM electrolytes was determined by impedance spectroscopy, the influence of the hardness was extracted by instrumented indentation technique. The results showed a linear correlation between the hardness and total ionic conductivity within the temperature range of 500-660 °C, thus indicating that both properties were strongly influenced on the relative density and purity of the samples. It has a potential practical implication: by measuring the LSGM hardness at room temperature, one can achieve an approach to the ionic conductivity within the studied temperature range.

The Development of Electrical Strain Gages

NASA Technical Reports Server (NTRS)

De Forest, A V; Leaderman, H

1940-01-01

The design, construction, and properties of an electrical-resistance strain gage consisting of fine wires molded in a laminated plastic are described. The properties of such gages are discussed and also the problems of molding of wires in plastic materials, temperature compensation, and cementing and removal of the gages. Further work to be carried out on the strain gage, together with instrument problems, is discussed.

Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique

NASA Astrophysics Data System (ADS)

Ali, H. M.; Mohamed, H. A.; Mohamed, S. H.

2005-08-01

Indium tin oxide (ITO) is widely utilized in numerous industrial applications due to its unique combined properties of transparency to visible light and electrical conductivity. ITO films were deposited on glass substrates by an electron beam evaporation technique at room temperature from bulk samples, with different thicknesses. The film with 1500 Å thick was selected to perform annealing in the temperature range of 200 400 °C and annealing for varying times from 15 to 120 min at 400 °C. The X-ray diffraction of the films was analyzed in order to investigate its dependence on thickness, and annealing. Electrical and optical measurements were also carried out. Transmittance, optical energy gap, refractive index, carrier concentration, thermal emissivity and resistivity were investigated. It was found that the as-deposited films with different thicknesses were highly absorbing and have relatively poor electrical properties. The films become opaque with increasing the film thickness. After thermal annealing, the resistance decreases and a simultaneous variation in the optical transmission occurs. A transmittance value of 85.5% in the IR region and 82% in the visible region of the spectrum and a resistivity of 2.8 × 10-4 Ω Cm were obtained at annealing temperature of 400 °C for 120 min.

Comparison of mechanical properties for several electrical spring contact alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nordstrom, Terry V.

Work was conducted to determine whether beryllium-nickel alloy 440 had mechanical properties which made it suitable as a substitute for the presently used precious metal contact alloys Paliney 7 and Neyoro G, in certain electrical contact applications. Possible areas of applicability for the alloy were where extremely low contact resistance was not necessary or in components encountering elevated temperatures above those presently seen in weapons applications. Evaluation of the alloy involved three major experimental areas: 1) measurement of the room temperature microplastic (epsilon approximately 10/sup -6/) and macroplastic (epsilon approximately 10/sup -3/) behavior of alloy 440 in various age hardeningmore » conditions, 2) determination of applied stress effects on stress relaxation or contact force loss and 3) measurement of elevated temperature mechanical properties and stress relaxation behavior. Similar measurements were also made on Neyoro G and Paliney 7 for comparison. The primary results of the study show that beryllium-nickel alloy 440 is from a mechanical properties standpoint, equal or superior to the presently used Paliney 7 and Neyoro G for normal Sandia requirements. For elevated temperature applications, alloy 440 has clearly superior mechanical properties.« less

Tailoring Functional Chitosan-based Composites for Food Applications.

PubMed

Nunes, Cláudia; Coimbra, Manuel A; Ferreira, Paula

2018-03-08

Chitosan-based functional materials are emerging for food applications. The covalent bonding of molecular entities demonstrates to enhance resistance to the typical acidity of food assigning mechanical and moisture/gas barrier properties. Moreover, the grafting to chitosan of some functional molecules, like phenolic compounds or essential oils, gives antioxidant, antimicrobial, among others properties to chitosan. The addition of nanofillers to chitosan and other biopolymers improves the already mentioned required properties for food applications and can attribute electrical conductivity and magnetic properties for active and intelligent packaging. Electrical conductivity is a required property for the processing of food at low temperature using electric fields or for sensors application. © 2018 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical conductivity of Icelandic deep geothermal reservoirs: insight from HT-HP laboratory experiments

NASA Astrophysics Data System (ADS)

Nono, Franck; Gibert, Benoit; Loggia, Didier; Parat, Fleurice; Azais, Pierre; Cichy, Sarah

2016-04-01

Although the Icelandic geothermal system has been intensively investigated over the years, targeting increasingly deeper reservoirs (i.e. under supercritical conditions) requires a good knowledge of the behaviour of physical properties of the host rock in order to better interpret large scale geophysical observations. In particular, the interpretation of deep electrical soundings remains controversial as only few studies have investigated the influence of altered minerals and pore fluid properties on electrical properties of rocks at high temperature and pressure. In this study, we investigate the electrical conductivity of drilled samples from different Icelandic geothermal fields at elevated temperature, confining pressure and pore pressure conditions (100°C < T < 600°C, confining pressure up to 100 MPa and pore pressure up to 35 MPa). The investigated rocks are composed of hyaloclastites, dolerites and basalts taken from depths of about 800 m for the hyaloclastites, to almost 2500 m for the dolerites. They display different porosity structures, from vuggy and intra-granular to micro-cracked porosities, and have been hydrothermally alterated in the chlorite to amphibolite facies. Electrical conductivity measurements are first determined at ambient conditions as a function of pore fluid conductivity in order to establish their relationships with lithology and pore space topology, prior to the high pressure and temperature measurements. Cementation factor varies from 1.5 for the dolerites to 2.83 for the basalt, reflecting changes in the shape of the conductive channels. The surface conductivities, measured at very low fluid conductivity, increases with the porosity and is correlated with the cation exchange capacity. At high pressure and temperature, we used the two guard-ring electrodes system. Measurements have been performed in dry and saturated conditions as a function of temperature and pore pressure. The supercritical conditions have been investigated and temperature cycles have been performed systematically. Dry electrical conductivity measurements show for most of the samples irreversible changes when temperatures exceed 500°C. These changes are interpreted as destabilization/dehydration of alteration minerals that could lead to the presence of a conductive fluid phase in the samples. Very low and high salinity (NaCl) electrical conductivity measurements have been performed as a function of temperature. At supercritical conditions, electrical conductivity at low salinity is not pore pressure dependent and surface conduction is preponderant. At saturated conditions, the rock's electrical conductivity increases linearly (as a function of T-1) until 350°C. Above 350°C, the conductivity decreases. All rock types exhibit the same increasing rate. This work was funded by the of the EC project IMAGE (Integrated Methods for Advanced Geothermal Exploration, grant agreement No. 608553).

Low Temperature Noise and Electrical Characterization of the Company Heterojunction Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Gee, Russell C.; Fossum, Eric R.; Baier, Steven M.

1993-01-01

This paper discusses the electrical properties of the complementary heterojunction field-effect transistor (CHFET) at 4K, including the gate leakage current, the subthreshold transconductance, and the input-referred noise voltage.

Electrical and optical properties of Ar/NH{sub 3} atmospheric pressure plasma jet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Zheng-Shi, E-mail: changzhsh1984@163.com, E-mail: gjzhang@xjtu.edu.cn; Yao, Cong-Wei; Chen, Si-Le

Inspired by the Penning effect, we obtain a glow-like plasma jet by mixing ammonia (NH{sub 3}) into argon (Ar) gas under atmospheric pressure. The basic electrical and optical properties of an atmospheric pressure plasma jet (APPJ) are investigated. It can be seen that the discharge mode transforms from filamentary to glow-like when a little ammonia is added into the pure argon. The electrical and optical analyses contribute to the explanation of this phenomenon. The discharge mode, power, and current density are analyzed to understand the electrical behavior of the APPJ. Meanwhile, the discharge images, APPJ's length, and the components ofmore » plasma are also obtained to express its optical characteristics. Finally, we diagnose several parameters, such as gas temperature, electron temperature, and density, as well as the density number of metastable argon atoms of Ar/NH{sub 3} APPJ to help judge the usability in its applications.« less

Enhancements of magnetic properties and planar magnetoresistance by electric fields in γ-Fe{sub 2}O{sub 3}/MgO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Bin; Qin, Hongwei; Pei, Jinliang

2016-05-23

The treatment of perpendicular electric field upon γ-Fe{sub 2}O{sub 3}/MgO film at room temperature could adjust the magnetic properties (saturation magnetization, magnetic remanence, coercivity, and saturation magnetizing field) of the film. The enhancement of saturation magnetization after the treatment of electric field may be connected with the combined shift effects of Mg ions from MgO to γ-Fe{sub 2}O{sub 3} and O{sup 2−} ions from γ-Fe{sub 2}O{sub 3} to MgO. The negative magnetoresistance of the γ-Fe{sub 2}O{sub 3}/MgO film also enhances with the treatment of perpendicular electric field at room temperature, possibly due to the increasing of electron hopping rate betweenmore » Fe{sup 2+} and Fe{sup 3+}.« less

Modeling of skin cooling, blood flow, and optical properties in wounds created by electrical shock

NASA Astrophysics Data System (ADS)

Nguyen, Thu T. A.; Shupp, Jeffrey W.; Moffatt, Lauren T.; Jordan, Marion H.; Jeng, James C.; Ramella-Roman, Jessica C.

2012-02-01

High voltage electrical injuries may lead to irreversible tissue damage or even death. Research on tissue injury following high voltage shock is needed and may yield stage-appropriate therapy to reduce amputation rate. One of the mechanisms by which electricity damages tissue is through Joule heating, with subsequent protein denaturation. Previous studies have shown that blood flow had a significant effect on the cooling rate of heated subcutaneous tissue. To assess the thermal damage in tissue, this study focused on monitoring changes of temperature and optical properties of skin next to high voltage wounds. The burns were created between left fore limb and right hind limb extremities of adult male Sprague-Dawley rats by a 1000VDC delivery shock system. A thermal camera was utilized to record temperature variation during the exposure. The experimental results were then validated using a thermal-electric finite element model (FEM).

Numerical modeling of friction welding of bi-metal joints for electrical applications

NASA Astrophysics Data System (ADS)

Velu, P. Shenbaga; Hynes, N. Rajesh Jesudoss

2018-05-01

In the manufacturing industries, and more especially in electrical engineering applications, the usage of non-ferrous materials plays a vital role. Today's engineering applications relies upon some of the significant properties such as a good corrosion resistance, mechanical properties, good heat conductivity and higher electrical conductivity. Copper-aluminum bi-metal joint is one such combination that meets the demands requirements for electrical applications. In this work, the numerical simulation of AA 6061 T6 alloy/Copper was carried out under joining conditions. By using this developed model, the temperature distribution along the length of the dissimilar joint is predicted and the time-temperature profile has also been generated. Besides, a Finite Element Model has been developed by using the numerical simulation Tool "ABAQUS". This developed FEM is helpful in predicting various output parameters during friction welding of this dissimilar joint combination.

Intelligent sensor in control systems for objects with changing thermophysical properties

NASA Astrophysics Data System (ADS)

Belousov, O. A.; Muromtsev, D. Yu; Belyaev, M. P.

2018-04-01

The control of heat devices in a wide temperature range given thermophysical properties of an object is a topical issue. Optimal control systems of electric furnaces have to meet strict requirements in terms of accuracy of production procedures and efficiency of energy consumption. The fulfillment of these requirements is possible only if the dynamics model describing adequately the processes occurring in the furnaces is used to calculate the optimal control actions. One of the types of electric furnaces is the electric chamber furnace intended for heat treatment of various materials at temperatures from thousands of degrees Celsius and above. To solve the above-mentioned problem and to determine its place in the system of energy-efficient control of dynamic modes in the electric furnace, we propose the concept of an intelligent sensor and a method of synthesizing variables on sets of functioning states. The use of synthesis algorithms for optimal control in real time ensures the required accuracy when operating under different conditions and operating modes of the electric chamber furnace.

Temperature dependence of electrical properties of mixture of exogenous neurotransmitters dopamine and epinephrine

NASA Astrophysics Data System (ADS)

Patki, Mugdha; Patil, Vidya

2016-05-01

Neurotransmitters are chemical messengers that support the communication between the neurons. In vitro study of exogenous neurotransmitters Dopamine and Epinephrine and their mixture, carried out to learn about their electrical properties being dielectric constant and conductivity amongst others. Dielectric constant and conductivity of the selected neurotransmitters are found to increase with temperature. As a result, the time constant of the system increases with temperature. This change leads to increase in the time taken by the synapse to transport the action potential. The correlation between physical properties of exogenous neurotransmitters and psychological and physiological behaviour of human being may be understood with the help of current study. The response time of Epinephrine is in microseconds whereas response time of Dopamine is in milliseconds. The response time for both the neurotransmitters and their mixture is found to be increasing with temperature indicating the symptoms such as depression, apathy, chronic fatigue and low physical energy with no desire to exercise the body, which are observed during the fever.

Electrical conduction and thermoelectric properties of perovskite-type BaBi1-xSbxO3

NASA Astrophysics Data System (ADS)

Yasukawa, Masahiro; Shiga, Yuta; Kono, Toshio

2012-06-01

To elucidate the thermoelectric properties at high temperatures, the electrical conductivity and Seebeck coefficient were measured at temperatures between 423 K and 973 K for perovskite-type ceramics of BaBi1-xSbxO3 solid solutions with x=0.0-0.5. All the ceramics exhibit p-type semiconducting behaviors and electrical conduction is attributed to hopping of small polaronic holes localized on the pentavalent cations. Substitution of Bi with Sb causes the electrical conductivity σ and cell volume to decrease, but the Seebeck coefficient S to increase, suggesting that the Sb atoms are doped as Sb5+ and replace Bi5+, reducing 6s holes conduction from Bi5+(6s0) to Bi3+ (6s2). The thermoelectric power factor S2σ has values of 6×10-8-3×10-5 W m-1 K-2 in the measured temperature range, and is maximized for an Sb-undoped BaBiO3-δ, but decreases upon Sb doping due to the decreased σ values.

Site Redistribution, Partial Frozen-in Defect Chemistry, and Electrical Properties of Ba1-x(Zr,Pr)O3-δ.

PubMed

Antunes, Isabel; Mikhalev, Sergey; Mather, Glenn Christopher; Kharton, Vladislav Vadimovich; Figueiras, Fábio Gabriel; Alves, Adriana; Rodrigues, Joana; Correia, Maria Rosário; Frade, Jorge Ribeiro; Fagg, Duncan Paul

2016-09-06

Changes in nominal composition of the perovskite (ABO3) solid solution Ba1-x(Zr,Pr)O3-δ and adjusted firing conditions at very high temperatures were used to induce structural changes involving site redistribution and frozen-in point defects, as revealed by Raman and photoluminescence spectroscopies. Complementary magnetic measurements allowed quantification of the reduced content of Pr. Weak dependence of oxygen stoichiometry with temperature was obtained by coulometric titration at temperatures below 1000 °C, consistent with a somewhat complex partial frozen-in defect chemistry. Electrical conductivity measurements combined with transport number and Seebeck coefficient measurements showed prevailing electronic transport and also indicated trends expected for partial frozen-in conditions. Nominal Ba deficiency and controlled firing at very high temperatures allows adjustment of structure and partial frozen-in defect chemistry, opening the way to engineer relevant properties for high-temperature electrochemical applications.

Effects of Annealing Temperature on Properties of Ti-Ga-Doped ZnO Films Deposited on Flexible Substrates.

PubMed

Chen, Tao-Hsing; Chen, Ting-You

2015-11-03

An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga-doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

Effect of rare-earth substitution at La-site on structural, electrical and thermoelectric properties of La0.7-xRExSr0.3MnO3 compounds (x = 0, 0.2, 0.3; RE = Eu, Gd, Y)

NASA Astrophysics Data System (ADS)

Choudhary, Y. R. S.; Mangavati, Suraj; Patil, Siddanagouda; Rao, Ashok; Nagaraja, B. S.; Thomas, Riya; Okram, G. S.; Kini, Savitha G.

2018-04-01

In the present communication, we present results on the effect of rare-earth (RE) substitution at La-site on the structural, electrical and thermoelectric properties of La0.7-xRExSr0.3MnO3 compounds. The lattice parameters are observed to decrease with RE-doping which is attributed to the fact that the substituted RE ions (RE = Eu, Gd and Y) are smaller than that of La ion. In high temperature semiconducting regime, small polaron hopping (SPH) model is valid, whereas, variable hopping model is valid in low temperature metallic region. The resistivity in the entire temperature range follows percolation model. All the samples exhibit sign reversal in thermopower, S. From temperature dependent S data, it is seen that SPH model is applicable in high temperature regime.

Nature of Dielectric Properties, Electric Modulus and AC Electrical Conductivity of Nanocrystalline ZnIn2Se4 Thin Films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.

2018-02-01

The structural characteristics of thermally deposited ZnIn2Se4 thin films were indexed utilizing x-ray diffraction as well as scanning electron microscopy techniques. Dielectric properties, electric modulus and AC electrical conductivity of ZnIn2Se4 thin films were examined in the frequency range from 42 Hz to 106 Hz. The capacitance, conductance and impedance were measured at different temperatures. The dielectric constant and dielectric loss decrease with an increase in frequency. The maximum barrier height was determined from the analysis of the dielectric loss depending on the Giuntini model. The real part of the electric modulus revealed a constant maximum value at higher frequencies and the imaginary part of the electric modulus was characterized by the appearance of dielectric relaxation peaks. The AC electrical conductivity obeyed the Jonscher universal power law. Correlated barrier hopping model was the appropriate mechanism for AC conduction in ZnIn2Se4 thin films. Estimation of the density of states at the Fermi level and activation energy, for AC conduction, was carried out based on the temperature dependence of AC electrical conductivity.

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors.

PubMed

Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

2016-10-11

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this 'electrical activation', the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

Influence of temperature on the electrical conductivity of leachate from municipal solid waste.

PubMed

Grellier, Solenne; Robain, Henri; Bellier, Gérard; Skhiri, Nathalie

2006-09-01

A bioreactor landfill is designed to manage municipal solid waste, through accelerated waste biodegradation, and stabilisation of the process by means of the controlled addition of liquid, i.e. leachate recirculation. The measurement of electrical resistivity by Electrical Resistivity Tomography (ERT) allows to monitor water content present in the bioreactors. Variations in electrical resistivity are linked to variations in moisture content and temperature. In order to overcome this ambiguity, two laboratory experiments were carried out to establish a relationship between temperature and electrical conductivity: the first set of measurements was made for leachate alone, whereas the second set was made with two different granular media saturated with leachate. Both experiments confirm a well known increase in conductivity of about 2% degrees C(-1). However, higher suspended matter concentrations lead to a lower dependence of electrical conductivity on temperature. Furthermore, for various porous media saturated with an identical leachate, the higher the specific surface of the granular matrix, the lower the effective bulk electrical conductivity. These observations show that a correct understanding of the electrical properties of liquids requires the nature and (in particular) the size of the electrical charge carriers to be taken into account.

Electrical and galvanomagnetic properties of biocarbon preforms of white pine wood

NASA Astrophysics Data System (ADS)

Popov, V. V.; Orlova, T. S.; Ramirez-Rico, J.

2009-11-01

The electrical and galvanomagnetic properties of high-porosity biocarbon preforms prepared from white pine wood by pyrolysis at carbonization temperatures T carb = 1000 and 2400°C have been studied. Measurements have been made of the behavior with temperature of the electrical resistivity, as well as of magnetoresistance and the Hall coefficient in the 1.8-300-K temperature interval and magnetic fields of up to 28 kOe. It has been shown that samples of both types (with T carb = 1000 and 2400°C) are characterized by high carrier (hole) concentrations of 6.3 × 1020 and 3.6 × 1020 cm-3, respectively. While these figures approach the metallic concentration, the electrical resistivity of the biocarbon materials studied, unlike that of normal metals, grows with decreasing temperature. Increasing T carb brings about a decrease in electrical resistivity by a factor 1.5-2 within the 1.8-300-K temperature range. The magnetoresistance also follows a qualitatively different pattern at low (1.8-4.2 K) temperatures: it is negative for T carb = 2400°C and positive for T carb = 1000°C. An analysis of experimental data has revealed that the specific features in the conductivity and magnetoresistance of these samples are described by quantum corrections associated inherently with structural characteristics of the biocarbon samples studied, more specifically with the difference between the fractions of the quasi-amorphous and nanocrystalline phases, as well as with the fine structure of the latter phase forming at the two different T carb.

Electronic structure and thermoelectric transport properties of the golden Th{sub 2}S{sub 3}-type Ti{sub 2}O{sub 3} under pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Bin, E-mail: hnsqxubin@163.com; Gao, Changzheng; Zhang, Jing

2016-05-15

A lot of physical properties of Th{sub 2}S{sub 3}-type Ti{sub 2}O{sub 3} have investigated experimentally, hence, we calculated electronic structure and thermoelectric transport properties by the first-principles calculation under pressure. The increase of the band gaps is very fast from 30 GPa to 35 GPa, which is mainly because of the rapid change of the lattice constants. The total density of states becomes smaller with increasing pressure, which shows that Seebeck coefficient gradually decreases. Two main peaks of Seebeck coefficients always decrease and shift to the high doping area with increasing temperature under pressure. The electrical conductivities always decrease withmore » increasing temperature under pressure. The electrical conductivity can be improved by increasing pressure. Electronic thermal conductivity increases with increasing pressure. It is noted that the thermoelectric properties is reduced with increasing temperature.« less

Improved electrical properties after post annealing of Ba0.7Sr0.3TiO3 thin films for MIM capacitor applications

NASA Astrophysics Data System (ADS)

Rouahi, A.; Kahouli, A.; Sylvestre, A.; Jomni, F.; Defaÿ, E.; Yangui, B.

2012-11-01

Dielectric measurements have been performed on ion beam sputtering (IBS) barium strontium titanate Ba0.7Sr0.3TiO3 thin films at annealing temperatures 470 and 700 °C using impedance spectroscopy. The effect of the annealing temperature upon the electrical properties of the films is also investigated using capacitance-voltage techniques. Increasing annealing temperature suggested the increases of density and grain size, whereas the density of the trapped oxygen vacancy may be decreasing with increasing annealing temperature. The barrier height ( E a) of the oxygen vacancy decreases with increasing annealing temperature. The C- V characteristics were investigated in relation to the annealing temperature to identify the anomalous capacitance in the MIM configuration films. Among all measurement temperatures, it was observed that the data fit well by the "LGD" model. The interfacial effect and its dependence of morphology structure have been studied, and the results are discussed.

Characterization of ZnAl cast alloys with Na addition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gancarz, Tomasz, E-mail: t.gancarz@imim.pl; Cempura, Grzegorz; Skuza, Wojciech

2016-01-15

This study was aimed at evaluating the microstructural change and thermal, electrical and mechanical properties with the addition of Na to eutectic ZnAl alloys. Solders based on eutectic ZnAl containing 0.2 to 3.0 (wt.%) of Na were developed for high temperature solder. Differential scanning calorimetry (DSC) measurements were performed to determine the melting temperatures of the alloys. Thermal linear expansion and electrical resistivity measurements were performed over − 50 °C to 300 °C and 30 °C to 300 °C temperature ranges, respectively. The microstructure of the specimens was analyzed using scanning (SEM) and transmission electron microscopy (TEM) techniques. Chemical microanalysismore » was performed by energy-dispersive X-ray spectroscopy (EDS) on SEM and TEM. The precipitates of NaZn{sub 13} were confirmed by X-ray diffraction (XRD) measurements and selected area electron diffraction (SAED) techniques. The addition of Na to eutectic ZnAl alloy increased the electrical resistivity and reduced the coefficient of thermal expansion; however, the melting point did not change. The mechanical properties, strain and microhardness increased with Na content in alloys. - Highlights: • High temperature soldering materials of ZnAl with Na were designed and characterized. • Precipitates of NaZn{sub 13}were observed and confirmed using TEM and XRD. • Addition of Na to eutectic ZnAl cussed increased mechanical properties. • NaZn{sub 13} caused increased electrical resistivity and microhardness, and reduced the CTE.« less

Degradation mechanisms of optoelectric properties of GaN via highly-charged 209Bi33+ ions irradiation

NASA Astrophysics Data System (ADS)

Zhang, L. Q.; Zhang, C. H.; Xian, Y. Q.; Liu, J.; Ding, Z. N.; Yan, T. X.; Chen, Y. G.; Su, C. H.; Li, J. Y.; Liu, H. P.

2018-05-01

N-type gallium nitride (GaN) epitaxial layers were subjected to 990-keV Bi33+ ions irradiation to various fluences. Optoelectric properties of the irradiated-GaN specimens were studied by means of Raman scattering and variable temperature photoluminescence (PL) spectroscopy. Raman spectra reveal that both the free-carrier concentration and its mobility generally decrease with a successive increase in ion fluence. Electro-optic mechanisms dominated the electrical transport to a fluence of 1.061 × 1012 Bi33+/cm2. Above this fluence, electrical properties were governed by the deformation potential. The appearance of vacancy-type defects results in an abrupt degradation in electrical transports. Varying temperature photoluminescence (PL) spectra display that all emission lines of 1.061 × 1012 Bi33+/cm2-irradiated specimen present a general remarkable thermal redshift, quenching, and broadening, including donor-bound-exciton peak, yellow luminescence band, and LO-phonon replicas. Moreover, as the temperature rises, a transformation from excitons (donor-acceptor pairs' luminescence) to band-to-band transitions (donor-acceptor combinations) was found, and the shrinkage effect of the band gap dominated the shift of the peak position gradually, especially the temperature increases above 150 K. In contrast to the un-irradiated specimen, a sensitive temperature dependence of all photoluminescence (PL) lines' intensity obtained from 1.061 × 1012 Bi33+/cm2-irradiated specimen was found. Mechanisms underlying were discussed.

Low temperature sintered giant dielectric permittivity CaCu3Ti4O12 sol-gel synthesized nanoparticle capacitors

NASA Astrophysics Data System (ADS)

Puli, Venkata Sreenivas; Adireddy, Shiva; Kothakonda, Manish; Elupula, Ravinder; Chrisey, Douglas B.

This paper reports on synthesis of polycrystalline complex perovskite CaCu3Ti4O12 (as CCTO) ceramic powders prepared by a sol-gel auto combustion method at different sintering temperatures and sintering times, respectively. The effect of sintering time on the structure, morphology, dielectric and electrical properties of CCTO ceramics is investigated. Tuning the electrical properties via different sintering times is demonstrated for ceramic samples. X-ray diffraction (XRD) studies confirm perovskite-like structure at room temperature. Abnormal grain growth is observed for ceramic samples. Giant dielectric permittivity was realized for CCTO ceramics. High dielectric permittivity was attributed to the internal barrier layer capacitance (IBLC) model associated with the Maxwell-Wagner (MW) polarization mechanism.

Electric property measurement of free-standing SrTiO3 nanoparticles assembled by dielectrophoresis

NASA Astrophysics Data System (ADS)

Budiman, Faisal; Kotooka, Takumi; Horibe, Yoichi; Eguchi, Masanori; Tanaka, Hirofumi

2018-06-01

Free-standing strontium titanate (SrTiO3/STO) nanoparticles (NPs) were synthesized by the sol–gel method. X-ray diffractometry revealed that the required minimum annealing temperature to synthesize pure and highly crystalline STO NPs was 500 °C. Moreover, morphological observation by field emission scanning electron microscopy showed that the STO NPs have a spherical structure and their size depended on annealing condition. Electrical properties were measured using a low-temperature probing system. Here, an electrode was fabricated by electron beam lithography and the synthesized STO NPs were aligned at the electrodes by dielectrophoresis. The conductance of a sample was proportional to temperature. Two conduction mechanisms originating from hopping and tunneling appeared in the Arrhenius plot.

Electrical Properties of Materials for Elevated Temperature Resistance Strain Gage Application. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Lei, Jih-Fen

1987-01-01

The objective was to study the electrical resistances of materials that are potentially useful as resistance strain gages at 1000 C. Transition metal carbides and nitrides, boron carbide and silicon carbide were selected for the experimental phase of this research. Due to their low temperature coefficient of resistance and good stability, TiC, ZrC, B sub 4 C and beta-SiC are suggested as good candidates for high temperature resistance strain gage applications.

Elevated temperature strain gages

NASA Technical Reports Server (NTRS)

Brittain, J. O.; Geslin, D.; Lei, J. F.

1986-01-01

One of the goals of the HOST Program is the development of electrical resistance strain gages for static strain measurements at temperatures equal to or greater than 1273 K. Strain gage materials must have a reproducible or predictable response to temperature, time and strain. It is the objective of this research to investigate criteria for the selection of materials for such applications through electrical properties studies. The results of the investigation of two groups of materials, refractory compounds and binary alloy solid solutions are presented.

Temperature-Dependent Electrical and Micromechanical Properties of Lanthanum Titanate with Additions of Yttria

NASA Technical Reports Server (NTRS)

Goldsby, Jon C.

2010-01-01

Temperature-dependent elastic properties were determined by establishing continuous flexural vibrations in the material at its lowest resonance frequency of 31tHz. The imaginary part of the complex impedance plotted as a function of frequency and temperature reveals a thermally activated peak, which decreases in magnitude as the temperature increases. Additions of yttria do not degrade the electromechanical in particularly the elastic and anelastic properties of lanthanum titanate. Y2O3/La2Ti2O7 exhibits extremely low internal friction and hence may be more mechanical fatigue-resistant at low strains.

Electron-Beam Deposition of Superconducting Molybdenum Thin Films for the Development of Mo/Au TES X-Ray Microcalorimeter

NASA Technical Reports Server (NTRS)

Finkbeiner, Fred Michael; Adams, Joseph S.; Bandler, Simon R.; Betancour-Martinez, Gabriele L.; Brown, Ari David; Chang, Meng-Ping; Chervenak, James A.; Chiao, Meng P.; Datesman, Aaron; Eckart, Megan E.;

A systematic study on the effect of electron beam irradiation on structural, electrical, thermo-electric power and magnetic property of LaCoO3

NASA Astrophysics Data System (ADS)

Benedict, Christopher J.; Rao, Ashok; Sanjeev, Ganesh; Okram, G. S.; Babu, P. D.

2016-01-01

In this communication, the effect of electron beam irradiation on the structural, electrical, thermo-electric power and magnetic properties of LaCoO3 cobaltites have been investigated. Rietveld refinement of XRD data reveals that all samples are single phased with rhombohedral structure. Increase in electrical resistivity data is observed with increase in dosage of electron beam irradiation. Analysis of the measured electrical resistivity data indicates that the small polaron hopping model is operative in the high temperature regime for all samples. The Seebeck coefficient (S) of the pristine and the irradiated samples exhibits a crossover from positive to negative values, and a colossal value of Seebeck coefficient (32.65 mV/K) is obtained for pristine sample, however, the value of S decreases with increase in dosage of irradiation. The analysis of Seebeck coefficient data confirms that the small polaron hopping model is operative in the high temperature region. The magnetization results give clear evidence of increase in effective magnetic moment due to increase in dosage of electron beam irradiation.

Single crystal growth and physical properties of the new ternary compound Eu2Mg4Si3

NASA Astrophysics Data System (ADS)

Numakura, Ryosuke; Iizuka, Ryosuke; Michimura, Shinji; Katano, Susumu; Kosaka, Masashi

2018-05-01

We have studied the magnetic and electrical properties of new ternary europium magnesium silicide Eu2Mg4Si3. The single crystalline Eu2Mg4Si3 has been prepared by the Mg self-flux method. The compound crystalizes in the hexagonal Hf2Co4P3-type structure with space group P 6 bar 2 m with unit cell parameters a = 14.78 (3) Å and c = 4.434 (6) Å . Magnetic, electrical, and thermal properties indicate that the system undergoes two successive phase transitions, occurring at TN1 = 9.6 K and TN2 = 8.4 K . The estimated effective magnetic moment is close to the moment of free Eu2+ ion. The electrical resistivity data ρ (T) for Eu2Mg4Si3 show a metallic-like behavior from room temperature down to about 100 K. However, the ρ (T) data exhibit a notable upturn below 80 K and a maximum around TN1 and then suddenly decrease with decreasing temperature. These features are strongly suppressed by applying magnetic fields and a metallic temperature dependence eventually exhibits over the whole temperature range in a magnetic field of 30 kOe. Such behavior is observed in some magnetoresistive compounds.

Investigation of electrophysical properties of allotropic modifications of carbon in the range of temperatures 140-400 K

NASA Astrophysics Data System (ADS)

Goshev, A. A.; Eseev, M. K.; Volkov, A. S.; Lyah, N. L.

2017-09-01

The paper presents the results of the investigation of allotropic modifications of carbon (coal, graphite, fullerenes, CNTs. Dependences of conductivity on the field frequency in the temperature range 140-400 K are presented. The characteristic features associated with the structure and types of hybridization are revealed. Calculation of the activation energy of carriers was performed. As well article presents experimental study of electrical properties of polymeric composites, reinforced different types of allotropic modifications of carbon (CNTs, graphite, fullerenes, coal) in alternating electrical field in frequency band from 0.01 Hz to 10 MHz. The threshold of percolation of polymer composites with various types of additives and their influence for conduction properties was estimated.

Charge-transport in tin-iodide perovskite CH3NH3SnI3: origin of high conductivity.

PubMed

Takahashi, Yukari; Obara, Rena; Lin, Zheng-Zhong; Takahashi, Yukihiro; Naito, Toshio; Inabe, Tamotsu; Ishibashi, Shoji; Terakura, Kiyoyuki

2011-05-28

The structural and electrical properties of a metal-halide cubic perovskite, CH(3)NH(3)SnI(3), have been examined. The band structure, obtained using first-principles calculation, reveals a well-defined band gap at the Fermi level. However, the temperature dependence of the single-crystal electrical conductivity shows metallic behavior down to low temperatures. The temperature dependence of the thermoelectric power is also metallic over the whole temperature range, and the large positive value indicates that charge transport occurs with a low concentration of hole carriers. The metallic properties of this as-grown crystal are thus suggested to result from spontaneous hole-doping in the crystallization process, rather than the semi-metal electronic structure. The present study shows that artificial hole doping indeed enhances the conductivity.

Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C

NASA Astrophysics Data System (ADS)

Higashi, H.; Kudo, K.; Yamamoto, K.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

2018-06-01

We study the electrical properties of pseudo-single-crystalline Ge (PSC-Ge) films grown by a Au-induced layer exchange crystallization method at 250 °C. By inserting the SiNx layer between PSC-Ge and SiO2, we initiatively suppress the influence of the Ge/SiO2 interfacial defective layers, which have been reported in our previous works, on the electrical properties of the PSC-Ge layers. As a result, we can detect the influence of the ionized Au+ donors on the temperature-dependent hole concentration and Hall mobility. To further examine their electrical properties in detail, we also fabricate p-thin-film transistors (TFTs) with the PSC-Ge layer. Although the off-state leakage currents are suppressed by inserting the SiNx layer, the value of on/off ratio remains poor (<102). Even after the post-annealing at 400 °C for the TFTs, the on/off ratio is still poor (˜102) because of the gate-induced drain leakage current although a nominal field effect mobility is enhanced up to ˜25 cm2/V s. Considering these features, we conclude that the Au contaminations into the PSC-Ge layer can affect the electrical properties and device performances despite a low-growth temperature of 250 °C. To achieve further high-performance p-TFTs, we have to suppress the Au contaminations into PSC-Ge during the Au-induced crystallization growth.

Effect of Samarium Oxide on the Electrical Conductivity of Plasma-Sprayed SOFC Anodes

NASA Astrophysics Data System (ADS)

Panahi, S. N.; Samadi, H.; Nemati, A.

2016-10-01

Solid oxide fuel cells (SOFCs) are rapidly becoming recognized as a new alternative to traditional energy conversion systems because of their high energy efficiency. From an ecological perspective, this environmentally friendly technology, which produces clean energy, is likely to be implemented more frequently in the future. However, the current SOFC technology still cannot meet the demands of commercial applications due to temperature constraints and high cost. To develop a marketable SOFC, suppliers have tended to reduce the operating temperatures by a few hundred degrees. The overall trend for SOFC materials is to reduce their service temperature of electrolyte. Meanwhile, it is important that the other components perform at the same temperature. Currently, the anodes of SOFCs are being studied in depth. Research has indicated that anodes based on a perovskite structure are a more promising candidate in SOFCs than the traditional system because they possess more favorable electrical properties. Among the perovskite-type oxides, SrTiO3 is one of the most promising compositions, with studies demonstrating that SrTiO3 exhibits particularly favorable electrical properties in contrast with other perovskite-type oxides. The main purpose of this article is to describe our study of the effect of rare-earth dopants with a perovskite structure on the electrical behavior of anodes in SOFCs. Sm2O3-doped SrTiO3 synthesized by a solid-state reaction was coated on substrate by atmospheric plasma spray. To compare the effect of the dopant on the electrical conductivity of strontium titanate, different concentrations of Sm2O3 were used. The samples were then investigated by x-ray diffraction, four-point probe at various temperatures (to determine the electrical conductivity), and a scanning electron microscope. The study showed that at room temperature, nondoped samples have a higher electrical resistance than doped samples. As the temperature was increased, the electrical conductivity correspondingly increased. The optimum value of 1.1 S/cm was found at 340°C for samples with 1.5% mol Sm2O3.

Rapid thermal responsive conductive hybrid cryogels with shape memory properties, photothermal properties and pressure dependent conductivity.

PubMed

Deng, Zexing; Guo, Yi; Ma, Peter X; Guo, Baolin

2018-09-15

Stimuli responsive cryogels with multi-functionality have potential application for electrical devices, actuators, sensors and biomedical devices. However, conventional thermal sensitive poly(N-isopropylacrylamide) cryogels show slow temperature response speed and lack of multi-functionality, which greatly limit their practical application. Herein we present conductive fast (2 min for both deswelling and reswelling behavior) thermally responsive poly(N-isopropylacrylamide) cryogels with rapid shape memory properties (3 s for shape recovery), near-infrared (NIR) light sensitivity and pressure dependent conductivity, and further demonstrated their applications as temperature sensitive on-off switch, NIR light sensitive on-off switch, water triggered shape memory on-off switch and pressure dependent device. These cryogels were first prepared in dimethyl sulfoxide below its melting temperature in ice bath and subsequently put into aniline or pyrrole solution to in situ deposition of conducting polyaniline or polypyrrole nanoparticles. The continuous macroporous sponge-like structure provides cryogels with rapid responsivity both in deswelling, reswelling kinetics and good elasticity. After incorporating electrically conductive polyaniline or polypyrrole nanoaggregates, the hybrid cryogels exhibit desirable conductivity, photothermal property, pressure dependent conductivity and good cytocompatibility. These multifunctional hybrid cryogels make them great potential as stimuli responsive electrical device, tissue engineering scaffolds, drug delivery vehicle and electronic skin. Copyright © 2018 Elsevier Inc. All rights reserved.

a Study of the Electrical Impedance of Erythrocyte Membranes the Effects of Temperature and Radiation.

NASA Astrophysics Data System (ADS)

Gerig, Lee Harvey

The purpose of this work was to investigate the electrical impedance properties of Human Erythrocytes suspended in normal saline and specifically how radiation and temperature affected these properties. The cells were obtained by venepuncture from normal adult volunteers, washed three times and resuspended in phosphate buffered saline. The cells were irradiated by ('60)Co gamma rays to doses varying from 500 to 20,000 rads. The electrical impedance was measured using a computerized measurement and data acquisition system developed in the Biophysics Laboratory, School of Physics, University of New South Wales. The measurements were performed employing a four terminal technique and a digitally synthesized sine wave. The measurements revealed that nonirradiated blood from any specific individual had reproducible electrical properties from day to day and that there were only small differences in the electrical properties of blood from the various individuals sampled. This data displayed complex structure in both the capacitance versus frequency and conductance versus frequency curves. Of great interest was the dependence on the time post venesection, indicating a continual change in the state of the cells after removal from their natural environment. The experiments also revealed a non linear temperature dependence and a significant change in the suspension impedance as a function of absorbed dose. A model of the system was introduced which was able to emulate most of the measured phenomena. Studies of how the model can be adapted to fit the measured data for various cases (eg. time, temperature, radiation dose) suggested various physiological processes occurring within the membrane. The results were indicative of effects such as radiation induced changes in the lipid hydrocarbon region, the presence of a complex protein structure, the dissociation of charge within the protein, the presence of electrogenic pumps, and the destruction of the lipid matrix by radiation induced lipid peroxidation.

A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

NASA Astrophysics Data System (ADS)

Le, Tran; Phuc Dang, Huu; Luc, Quang Ho; Hieu Le, Van

2017-04-01

This study presents a detailed investigation of the structural, electrical, and optical properties of p-type Zn-doped SnO2 versus the deposition and annealing temperature. Using a direct-current (DC) magnetron sputtering method, p-type transparent conductive Zn-doped SnO2 (ZTO) films were deposited on quartz glass substrates. Zn dopants incorporated into the SnO2 host lattice formed the preferred dominant SnO2 (1 0 1) and (2 1 1) planes. X-ray photoelectron spectroscopy (XPS) was used for identifying the valence state of Zn in the ZTO film. The electrical property of ZTO films changed from n-type to p-type at the threshold temperature of 400 °C, and the films achieved extremely high conductivity at the optimum annealing temperature of 600 °C after annealing for 2 h. The best conductive property of the film was obtained on a 10 wt% ZnO-doped SnO2 target with a resistivity, hole concentration, and hole mobility of 0.22 Ω · cm, 7.19  ×  1018 cm-3, and 3.95 cm2 V-1 s-1, respectively. Besides, the average transmission of films was  >84%. The surface morphology of films was examined using scanning electron microscopy (SEM). Moreover, the acceptor level of Zn2+ was identified using photoluminescence spectra at room temperature. Current-voltage (I-V) characteristics revealed the behavior of a p-ZTO/n-Si heterojunction diode.

Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.

PubMed

Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M

2016-12-01

Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

Effect of Sintering Temperature on Dielectric Properties of Iron Deficient Nickel-Ferrite

NASA Astrophysics Data System (ADS)

Rani, Renu; Singh, Sangeeta; Juneja, J. K.; Prakash, Chandra; Raina, K. K.

2011-11-01

Nickel Ferrite among all the magneto ceramic materials have been studied very much due to its large number of applications. But there is a large scope of modification of its properties. Thus people still working on it for improvisation of its properties via compositional and structural modifications. Present paper reporting the preparation and characterization of iron deficient Nickel ferrite for different sintering temperature. Ferrite samples having the general formula NiFe1.98O4 were prepared using the standard ceramic method. The phase formation was confirmed by X-ray diffraction technique. The effect of sintering temperature on the electrical properties and resistivity was studied. The data shows that dielectric properties are highly dependent on the sintering temperature.

Characterizing the temperature dependence of electronic packaging-material properties

NASA Astrophysics Data System (ADS)

Fu, Chia-Yu; Ume, Charles

1995-06-01

A computer-controlled, temperature-dependent material characterization system has been developed for thermal deformation analysis in electronic packaging applications, especially for printed wiring assembly warpage study. For fiberglass-reinforced epoxy (FR-4 type) material, the Young's moduli decrease to as low as 20-30% of the room-temperature values, while the shear moduli decrease to as low as 60-70% of the room-temperature values. The electrical resistance strain gage technique was used in this research. The test results produced overestimated values in property measurements, and this was shown in a case study. A noncontact strau]n measurement technique (laser extensometer) is now being used to measure these properties. Discrepancies of finite-element warpage predictions using different property values increase as the temperature increases from the stress-free temperature.

Thermophysical Properties of Matter-The TPRC Data Series. Volume 10. Thermal Diffusivity

DTIC Science & Technology

1974-01-01

Encyclopaedia Britannica, The 19. Mikryukov , V . E ., "Temperature Dependence of the Heat Encyclopaedia Britannica Co.. New York, 11th Edition, Conductivity and...translation: Phys. Metals and Metallog. USSR, 12 (4), 39-44, 1962. 54 27539 Mikryukov , V . E . and Karagezyan, A. G., "Thermal and Electrical Properties of...Chem. Res., 62 (1), 8-13, 1968. 248 38076, Kirichenko, P.1. and Mikryukov , V . E ., "Thermal and Electrical Properties of Some Alloys of the 36392

Grain boundary dominated electrical conductivity in ultrananocrystalline diamond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiora, Neda; Mertens, Michael; Bruhne, Kai

Here, N-type electrically conductive ultrananocrystalline diamond (UNCD) films were deposited using the hot filament chemical vapor deposition technique with a gas mixture of H 2, CH 4 and NH 3. Depending on the deposition temperature and ammonia feed gas concentration, which serves as a nitrogen source, room temperature electrical conductivities in the order of 10 –2 to 5 × 10 1S/cm and activation energies in the meV range were achieved. In order to understand the origin of the enhanced electrical conductivity and clarify the role of ammonia addition to the process gas, a set of UNCD films was grown bymore » systematically varying the ammonia gas phase concentration. These samples were analyzed with respect to their morphology and electrical properties as well as their carbon and nitrogen bonding environments. Temperature dependent electrical conductivity measurements (300–1200 K) show that the electrical conductivity of the samples increases with temperature. The near edge x-ray absorption fine structure measurements reveal that the electrical conductivity of the UNCD films does not correlate directly with ammonia addition, but depends on the total amount of sp2 bonded carbon in the deposited films.« less

Grain boundary dominated electrical conductivity in ultrananocrystalline diamond

DOE PAGES

Wiora, Neda; Mertens, Michael; Bruhne, Kai; ...

2017-10-09

Here, N-type electrically conductive ultrananocrystalline diamond (UNCD) films were deposited using the hot filament chemical vapor deposition technique with a gas mixture of H 2, CH 4 and NH 3. Depending on the deposition temperature and ammonia feed gas concentration, which serves as a nitrogen source, room temperature electrical conductivities in the order of 10 –2 to 5 × 10 1S/cm and activation energies in the meV range were achieved. In order to understand the origin of the enhanced electrical conductivity and clarify the role of ammonia addition to the process gas, a set of UNCD films was grown bymore » systematically varying the ammonia gas phase concentration. These samples were analyzed with respect to their morphology and electrical properties as well as their carbon and nitrogen bonding environments. Temperature dependent electrical conductivity measurements (300–1200 K) show that the electrical conductivity of the samples increases with temperature. The near edge x-ray absorption fine structure measurements reveal that the electrical conductivity of the UNCD films does not correlate directly with ammonia addition, but depends on the total amount of sp2 bonded carbon in the deposited films.« less

Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs

NASA Astrophysics Data System (ADS)

Sun, Li; Weng, Guo-En; Liang, Ming-Ming; Ying, Lei-Ying; Lv, Xue-Qin; Zhang, Jiang-Yong; Zhang, Bao-Ping

2014-06-01

Optical and electrical properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) annealed in pure O2 ambient (500 °C) and pure N2 ambient (800 °C) were systematically investigated. The temperature-dependent photoluminescence measurements showed that high-temperature thermal annealing in N2 ambient can induce indium clusters in InGaN MQWs. Although the deep traps induced by indium clusters can act as localized centers for carriers, there are many more dislocations out of the trap centers due to high-temperature annealing. As a result, the radiative efficiency of the sample annealed in N2 ambient was lower than that annealed in O2 ambient at room temperature. Electrical measurements demonstrated that the LEDs annealed in O2 ambient were featured by a lower forward voltage and there was an increase of ~41% in wall-plug efficiency at 20 mA in comparison with the LEDs annealed in N2 ambient. It is thus concluded that activation of the Mg-doped p-GaN layer should be carried out at a low-temperature O2 ambient so as to obtain LEDs with better performance.

Electric field control of magnetic properties in FeRh/PMN-PT heterostructures

NASA Astrophysics Data System (ADS)

Xie, Yali; Zhan, Qingfeng; Shang, Tian; Yang, Huali; Liu, Yiwei; Wang, Baomin; Li, Run-Wei

2018-05-01

We investigated electric control of magnetic properties in FeRh/PMN-PT heterostructures. An electric field of 1 kV/cm applied on the PMN-PT substrate could increase the coercivity of FeRh film from 60 to 161 Oe at 360 K where the FeRh antiferromagnetic to ferromagnetic phase transition occurs. The electric field dependent coercive field reveals a butterfly shape, indicating a strain-mediated magnetoelectric coupling across the FeRh/PMN-PT interface. However, the uniaxial magnetic anisotropy of FeRh is almost unchanged with the applied electric field on the PMN-PT substrate, which suggests the change of coercivity in FeRh films is mainly due to the shift of the magnetic transition temperature under the electric field.

Enhanced electrical properties, color-tunable up-conversion luminescence, and temperature sensing behaviour in Er-doped Bi3Ti1.5W0.5O9 multifunctional ferroelectric ceramics

NASA Astrophysics Data System (ADS)

Zhang, Ying; Li, Jun; Chai, Xiaona; Wang, Xusheng; Li, Yongxiang; Yao, Xi

2017-03-01

Er-doped Bi3Ti1.5W0.5O9 (BTW-x) ferroelectric ceramics were prepared by a conventional solid-state reaction synthesis method, and their structure, electrical properties, up-conversion (UC) luminescence, and temperature sensing behaviour were investigated. A high piezoelectric coefficient d33 (9.6 pC/N), a large remnant polarization Pr (12.75 μC/cm2), a high Curie temperature Tc (730.2 °C), and the optimal luminescent intensity are obtained for the samples at x = 0.05. By changing the Er doped concentration, the BTW-x ceramics are capable of generating various UC spectra and the color could be tunable from green to yellow. According to the fluorescence intensity ratio of green emissions at 532.6 nm and 549.2 nm in the temperature range from 83 K to 423 K, optical temperature sensing properties are investigated and the maximum sensing sensitivity is found to be 0.00314 K-1 at 423 K. The results conclude that BTW-x would be a candidate in high temperature sensor, fluorescence thermometry, and opto-electronic integration applications.

“Thermal Stabilization Effect” of Al2O3 nano-dopants improves the high-temperature dielectric performance of polyimide

PubMed Central

Yang, Yang; He, Jinliang; Wu, Guangning; Hu, Jun

2015-01-01

Insulation performance of the dielectrics under extreme conditions always attracts widespread attention in electrical and electronic field. How to improve the high-temperature dielectric properties of insulation materials is one of the key issues in insulation system design of electrical devices. This paper studies the temperature-dependent corona resistance of polyimide (PI)/Al2O3 nanocomposite films under high-frequency square-wave pulse conditions. Extended corona resistant lifetime under high-temperature conditions is experimentally observed in the 2 wt% nanocomposite samples. The “thermal stabilization effect” is proposed to explain this phenomenon which attributes to a new kind of trap band caused by nanoparticles. This effect brings about superior space charge characteristics and corona resistance under high temperature with certain nano-doping concentration. The proposed theory is experimentally demonstrated by space charge analysis and thermally stimulated current (TSC) tests. This discovered effect is of profound significance on improving high-temperature dielectric properties of nanocomposites towards various applications. PMID:26597981

Ceramics at High Temperatures

NASA Astrophysics Data System (ADS)

Zheng, Peng; Zhang, Rui-zhi; Chen, Hao-ying; Hao, Wen-tao

2014-06-01

The Seebeck coefficient and electrical conductivity of CaCu3Ti4O12 (CCTO) ceramics were measured and analyzed in the high temperature range of 300°C to 800°C, and then the electrical conduction mechanism was investigated by using a combination of experimental data fitting and first-principles calculations. The Seebeck coefficient of the CCTO ceramic sintered at 1050°C is negative with largest absolute value of ˜650 μV/K at 300°C, and the electrical conductivity is 2-3 orders greater than the value reported previously by other researchers. With increasing sintering temperature, the Seebeck coefficient decreases while the electrical conductivity increases. The temperature dependence of the electrical conductivity follows the rule of adiabatic hopping conduction of small polarons. The calculated density of states of CCTO indicates that the conduction band is mainly contributed by the antibonding states of Cu 3 d electrons, therefore small-polaron hopping between CuO4 square planar clusters was proposed. Possible ways to further improve the thermoelectric properties of CCTO are also discussed.

Electrical properties of multilayer (DLC-TiC) films produced by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Alawajji, Raad A.; Kannarpady, Ganesh K.; Nima, Zeid A.; Kelly, Nigel; Watanabe, Fumiya; Biris, Alexandru S.

2018-04-01

In this work, pulsed laser deposition was used to produce a multilayer diamond like carbon (ML (DLC-TiC)) thin film. The ML (DLC-TiC) films were deposited on Si (100) and glass substrates at various substrate temperatures in the range of 20-450 °C. Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and atomic force microscopy were utilized to characterize the prepared films. Raman analysis revealed that as the substrate temperature increased, the G-peak position shifted to a higher raman shift and the full width at half maximum of the G and D bands decreased. XPS analysis indicated a decrease in sp3/sp2 ratio and an increase in Ti-C bond intensity when the substrate temperature was increased. Additionally, the surface roughness of ML (DLC-TiC) filmswas affected by the type and temperature of the substrate. The electrical measurement results indicated that the electrical resistivity of the ML (DLC-TiC) film deposited on Si and glass substrates showed the same behavior-the resistivity decreased when substrate temperature increased. Furthermore, the ML (DLC-TiC) films deposited on silicon showed lower electrical resistivity, dropping from 8.39E-4 Ω-cm to 5.00E-4 Ω-cm, and, similarly, the films on the glass substrate displayed a drop in electrical resistivity from 1.8E-2 Ω-cm to 1.2E-3 Ω-cm. These enhanced electrical properties indicate that the ML (DLC-TiC) films have widespread potential as transducers for biosensors in biological research; electrochemical electrodes, because these films can be chemically modified; biocompatible coatings for medicals tools; and more.

Caracterisation des proprietes dielectriques de materiaux composites a base de polyethylene terephtalate recycle

NASA Astrophysics Data System (ADS)

Mebarki, Fouzia

The aim of this study is to examine the possibility of using thermoplastic composite materials for electrical applications such as supports of automotive engine ignition systems. We are particularly interested in composites based on recycled polyethylene terephtalate (PET). Conventional isolations like PET cannot meet the new prescriptive requirements. The introduction of reinforcement materials, such as glass fibers and mica can improve the mechanical characteristics of these materials. However, this enhancement may also reduce electrical properties especially since these composites have to be used under severe thermal and electric stresses. In order to estimate PET composite insulation lifetimes, accelerated aging tests were carried out at temperatures ranging from room temperature to 140°C and at a frequency of 300Hz. Studies at high temperature will help to identify the service temperature of candidate materials. Dielectric breakdown tests have been made on a large number of samples according to the standard of dielectric strength tests of solid insulating ASTM D-149. These tests have to identify the problematic samples and to check solid insulation quality. The different knowledge gained from this analysis was used to predict material performance. This will give the company the possibility to improve existing formulations and subsequently develop a material having electrical and thermal properties suitable for this application.

Determination of electrical properties of degraded mixed ionic conductors: Impedance studies with applied dc voltage

NASA Astrophysics Data System (ADS)

Bayer, T. J. M.; Carter, J. J.; Wang, Jian-Jun; Klein, Andreas; Chen, Long-Qing; Randall, C. A.

2017-12-01

Under electrical bias, mixed ionic conductors such as SrTiO3 are characterized by oxygen vacancy migration which leads to resistance degradation. The defect chemistry to describe the relationship between conductivity and oxygen vacancies is usually obtained by high temperature conductivity data or quenching experiments. These techniques can investigate the equilibrated state only. Here, we introduce a new approach using in-situ impedance studies with applied dc voltage to analyze the temperature dependent electrical properties of degraded SrTiO3 single crystals. This procedure is most beneficial since it includes electric field driven effects. The benefits of the approach are highlighted by comparing acceptor doped and undoped SrTiO3. This approach allows the determination of the temperature activation of both anodic and cathodic conductivity of Fe-doped SrTiO3 in the degraded state. The anodic activation energy matches well with the published results, while the activation energy of the degraded cathode region reported here is not in agreement with earlier assumptions. The specific discrepancies of the experimental data and the published defect chemistry are discussed, and a defect chemistry model that includes the strong temperature dependence of the electron conductivity in the cathode region is proposed.

Monitoring and Control of an Adsorption System Using Electrical Properties of the Adsorbent for Organic Compound Abatement.

PubMed

Hu, Ming-Ming; Emamipour, Hamidreza; Johnsen, David L; Rood, Mark J; Song, Linhua; Zhang, Zailong

2017-07-05

Adsorption systems typically need gas and temperature sensors to monitor their adsorption/regeneration cycles to separate gases from gas streams. Activated carbon fiber cloth (ACFC)-electrothermal swing adsorption (ESA) is an adsorption system that has the potential to be controlled with the electrical properties of the adsorbent and is studied here to monitor and control the adsorption/regeneration cycles without the use of gas and temperature sensors and to predict breakthrough before it occurs. The ACFC's electrical resistance was characterized on the basis of the amount of adsorbed organic gas/vapor and the adsorbent temperature. These relationships were then used to develop control logic to monitor and control ESA cycles on the basis of measured resistance and applied power values. Continuous sets of adsorption and regeneration cycles were performed sequentially entirely on the basis of remote electrical measurements and achieved ≥95% capture efficiency at inlet concentrations of 2000 and 4000 ppm v for isobutane, acetone, and toluene in dry and elevated relative humidity gas streams, demonstrating a novel cyclic ESA system that does not require gas or temperature sensors. This contribution is important because it reduces the cost and simplifies the system, predicts breakthrough before its occurrence, and reduces emissions to the atmosphere.

Effect of rare-earth doping on the thermoelectric and electrical transport properties of the transition metal pentatelluride hafnium pentatelluride

NASA Astrophysics Data System (ADS)

Lowhorn, Nathan Dane

The transition metal pentatellurides HfTe5 and ZrTe5 have been observed to possess interesting electrical transport properties. High thermopower and low resistivity values result in high thermoelectric power factors. In addition, they possess anomalous transport behavior. The temperature dependence of the resistivity is semimetallic except for a large resistive peak as a function of temperature at around 75 K for HfTe5 and 145 K for ZrTe5. At a temperature corresponding to this peak, the thermopower crosses zero as it moves from large positive values to large negative values. This behavior has been found to be extremely sensitive to changes in the energetics of the system through influences such as magnetic field, stress, pressure, microwave radiation, and substitutional doping. This behavior has yet to be fully explained. Previous doping studies have shown profound and varied effects on the anomalous transport behavior. In this study we investigate the effect on the electrical resistivity, thermopower, and magnetoresistance of doping HfTe5 with rare-earth elements. We have grown single crystals of nominal Hf0.75RE 0.25Te5 where RE = Ce, Pr, Nd, Sm, Gd, Tb, Dy, and Ho. Electrical resistivity and thermopower data from about 10 K to room temperature are presented and discussed in terms of the thermoelectric properties. Doping with rare-earth elements of increasing atomic number leads to a systematic suppression of the anomalous transport behavior. Rare-earth doping also leads to an enhancement of the thermoelectric power factor over that of previously studied pentatellurides and the commonly used thermoelectric material Bi2Te3. For nominal Hf0.75Nd0.25Te5 and Hf0.75 Sm0.25Te5, values more than a factor of 2 larger than that Bi2Te3 are observed. In addition, suppression of the anomalous transport behavior leads to a suppression of the large magnetoresistive effect observed in the parent compounds. Rare-earth doping of HfTe5 has a profound impact on the anomalous electrical transport properties of the parent pentatellurides and produces enhanced thermoelectric properties.

Temperature dependence of electrical conduction in PEMA-EMITFSI film

NASA Astrophysics Data System (ADS)

Zain, N. F.; Megat Hasnan, M. M. I.; Sabri, M. F. M.; Said, S. M.; Mohamed, N. S.; Salleh, F.

2018-04-01

Transparent and flexible film of poly (ethyl methacrylate) incorporated with 1-ethyl-3-methyl imidazolium bis(trifluorosulfonyl) imide ionic liquid (PEMA-EMITFSI) with thickness between 100 and 200 µm was fabricated by using solution casting technique. From the ionic transport measurement, it is confirmed that the electrical conduction in PEMA-EMITFSI film is mainly contributed by ionic transport. Moreover, the temperature-dependence of electrical conductivity measurement for 7 days reveals that the electrical properties of PEMA-EMITFSI film could be able to withstand a number of thermal cycles and be lasting for a period of time for potentially used as thermoelectric material through thermal heating.

Intrinsic and extrinsic electrical and thermal transport of bulk black phosphorus

NASA Astrophysics Data System (ADS)

Hu, Sile; Xiang, Junsen; Lv, Meng; Zhang, Jiahao; Zhao, Hengcan; Li, Chunhong; Chen, Genfu; Wang, Wenhong; Sun, Peijie

2018-01-01

We report a comprehensive investigation of the electrical, thermal, and thermoelectric transport properties of bulk single-crystalline black phosphorus in wide temperature (2-300 K) and field (0-9 T) ranges. Electrical transport below T ≈ 250 K is found to be dominated by extrinsic hole-type charge carriers with large mobility exceeding 104 cm2/V s at low temperatures. While thermal transport measurements reveal an enhanced in-plane thermal conductivity maximum κ = 180 W/m K at T ≈ 25 K, it appears still to be largely constrained by extrinsic phonon scattering processes, e.g., the electron-phonon process, in addition to intrinsic umklapp scattering. The thermoelectric power and Nernst effect seem to be strongly influenced by ambipolar transport of charge carriers with opposite signs in at least the high-temperature region above 200 K, which diminishes the thermoelectric power factor of this material. Our results provide a timely update to the transport properties of bulk black phosphorus for future fundamental and applied research.

Temperature Dependence of Electrical Resistance of Woven Melt-Infiltrated SiCf/SiC Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Appleby, Matthew P.; Morscher, Gregory N.; Zhu, Dongming

2016-01-01

Recent studies have successfully shown the use of electrical resistance (ER)measurements to monitor room temperature damage accumulation in SiC fiber reinforced SiC matrix composites (SiCf/SiC) Ceramic Matrix Composites (CMCs). In order to determine the feasibility of resistance monitoring at elevated temperatures, the present work investigates the temperature dependent electrical response of various MI (Melt Infiltrated)-CVI (Chemical Vapor Infiltrated) SiC/SiC composites containing Hi-Nicalon Type S, Tyranno ZMI and SA reinforcing fibers. Test were conducted using a commercially available isothermal testing apparatus as well as a novel, laser-based heating approach developed to more accurately simulate thermomechanical testing of CMCs. Secondly, a post-test inspection technique is demonstrated to show the effect of high-temperature exposure on electrical properties. Analysis was performed to determine the respective contribution of the fiber and matrix to the overall composite conductivity at elevated temperatures. It was concluded that because the silicon-rich matrix material dominates the electrical response at high temperature, ER monitoring would continue to be a feasible method for monitoring stress dependent matrix cracking of melt-infiltrated SiC/SiC composites under high temperature mechanical testing conditions. Finally, the effect of thermal gradients generated during localized heating of tensile coupons on overall electrical response of the composite is determined.

Effect of thickness on electrical properties of SILAR deposited SnS thin films

NASA Astrophysics Data System (ADS)

Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

2016-03-01

Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

Impedance spectroscopy of water soluble resin modified by zirconium sulphate

NASA Astrophysics Data System (ADS)

Joseph, Anandraj; Joshi, Girish M.

2018-04-01

We successfully modified water soluble resin polyvinyl alcohol (PVA) by loading zirconium sulphate (ZrSO4). We demonstrated the measurement of electrical properties by using impedance analyser across frequency range (10 Hz-1 MHz) and the temperature range of (30°C to 150°C). The impedance spectroscopy demonstrates decrease in bulk resistance as a function of temperature loading of zirconia 2.5 wt. %. Increase in AC (10-5 S/cm and DC conductivity (10- 2 S/m) observed due to ionic contribution of zirconia. However, the electrical properties of PVA/ZrSO4 composite useful to develop battery electrolyte applications.

Atomistic study of the electronic contact resistivity between the half-Heusler alloys (HfCoSb, HfZrCoSb, HfZrNiSn) and the metal Ag

NASA Astrophysics Data System (ADS)

He, Yuping; Léonard, François; Spataru, Catalin D.

2018-06-01

Half-Heusler (HH) alloys have shown promising thermoelectric properties in the medium- and high-temperature range. To harness these material properties for thermoelectric applications, it is important to realize electrical contacts with low electrical contact resistivity. However, little is known about the detailed structural and electronic properties of such contacts and the expected values of contact resistivity. Here, we employ atomistic ab initio calculations to study electrical contacts in a subclass of HH alloys consisting of the compounds HfCoSb, HfZrCoSb, and HfZrNiSn. By using Ag as a prototypical metal, we show that the termination of the HH material critically determines the presence or absence of strong deformations at the interface. Our study includes contacts to doped materials, and the results indicate that the p -type materials generally form ohmic contacts while the n -type materials have a small Schottky barrier. We calculate the temperature dependence of the contact resistivity in the low- to medium-temperature range and provide quantitative values that set lower limits for these systems.

Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells

NASA Astrophysics Data System (ADS)

Kim, Doo-Soo; Park, Ji-Hyeon; Shin, Beom-Ki; Moon, Kyeong-Ju; Son, Myoungwoo; Ham, Moon-Ho; Lee, Woong; Myoung, Jae-Min

2012-10-01

A simple but scalable approach to the production of surface-textured Al-doped ZnO(AZO) films for low-cost transparent electrode applications in thin-film solar cells is introduced in this study by combining pulsed dc magnetron sputtering (PDMS) with wet etching in sequence. First, structural, electrical, and optical properties of the AZO films prepared by a PDMS were investigated as functions of deposition temperature to obtain transparent electrode films that can be used as indium-free alternative to ITO electrodes. Increase in the deposition temperature to 230 °C accompanied the improvement in crystalline quality and doping efficiency, which enabled the lowest electrical resistivity of 4.16 × 10-4 Ω cm with the carrier concentration of 1.65 × 1021 cm-3 and Hall mobility of 11.3 cm2/V s. The wet etching of the films in a diluted HCl solution resulted in surface roughening via the formation of crater-like structures without significant degradation in the electrical properties, which is responsible for the enhanced light scattering capability required for anti-reflective electrodes in thin film solar cells.

Hydrothermal synthesis and influence of later heat treatment on the structural evolution, optical and electrical properties of nanostructured α-MoO3 single crystals

NASA Astrophysics Data System (ADS)

Badr, A. M.; El-Anssary, E. H.; Elshaikh, H. A.; Afify, H. H.

2017-12-01

In the current study, α-MoO3 nanocrystals were successfully synthesized from ammonium heptamolybdate tetrahydrate using a simple hydrothermal route. The influence of calcination temperature on the structural, optical and electrical properties was systematically investigated for the MoO3 powder products. The XRD results were analyzed for these powders, revealing the formation of a mixed phase (β- and α-MoO3) at calcination temperatures ranging from 350 °C-450 °C, and hence a residual monoclinic phase still exists in the samples at the calcination temperature of 450 °C. Subsequently, the mixed phase was completely converted to a pure single phase of α-MoO3 at a calcination temperature of 500 °C. The optical properties of the MoO3 powders were investigated using the transformed diffuse reflectance technique according to Kubelka-Munk theory. For such a powder product, the results of the optical measurements demonstrated the realization of indirect and direct allowed transitions at the spectral ranges 3.31-3.91 eV and 3.66-4.27 eV, respectively. The indirect- and direct-allowed band-gaps of the MoO3 products were found to increase from 2.69-3.12 eV and from 3.43-3.64 eV, respectively, by increasing the calcination temperature from 350 °C-600 °C. The MoO3 powders calcined at different temperatures were converted into five dense tablets for performing the electrical measurements. These measurements were carried out at different working temperatures using a system operating under high vacuum conditions. The results revealed that the dc-conductivity of such a tablet typically increases by more than five orders of magnitude with an increase in the working temperature from 77-300 K. These results also demonstrated a high dependence of dc-conductivity on the calcination temperature for the MoO3 products. The dc-conductivity as a function of the operating temperature revealed the presence of at least three different electrical conduction mechanisms for the same MoO3 tablet.

Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells.

PubMed

Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young

2018-09-01

The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.

Optical and electrical properties of heavily indium-doped CdS around the semiconductor-metal phase transition

NASA Astrophysics Data System (ADS)

Broser, I.; Broser, R.; Birkicht, E.

1990-04-01

Heavily indium-doped CdS crystals are studied by comparing their optical and electrical properties. It is shown that in the near infrared spectral region for highly conducting crystals the correlation of electrical conductivity and optical effects can still be understood in the frame of the classical Drude-Lorentz model. Even for high doping the relaxation time τ and the effective mass m ∗ of the electrons are not markedly different from the room temperature values of "pure" crystals. At photon energies near the band gap, however, optical spectra in transmission, reflectivity, and emission show clearly the existence of band-tails and screening effects. A different situation holds for a highly compensated specimen: They are in a wide temperature region highly isolating, show activated photoconductivity and special structures in the optical spectra near the band gap. Their properties can be explained by assuming a meandering bandbending due to the combined action of donors and acceptors and the assumption of spatially isolated electron and hole droplets [6].

Relationship of Cure Temperature to Mechanical, Physical, and Dielectric Performance of PDMS Glass Composite for Electric Motor Insulation

NASA Technical Reports Server (NTRS)

Miller, Sandi G.; Becker, Kathleen; Williams, Tiffany S.; Scheiman, Daniel A.; McCorkle, Linda S.; Heimann, Paula J.; Ring, Andrew; Woodworth, Andrew

2017-01-01

Achieving NASAs aggressive fuel burn and emission reduction for N-plus-3 aircraft will require hybrid electric propulsion system in which electric motors driven by either power generated from turbine or energy storage system will power the fan for propulsion. Motors designed for hybrid electric aircraft are expected to operate at medium to high voltages over long durations in a high altitude service environment. Such conditions have driven research toward the development of wire insulation with improved mechanical strength, thermal stability and increased breakdown voltage. The silicone class of materials has been considered for electric wire insulation due to its inherent thermal stability, dielectric strength and mechanical integrity. This paper evaluates the dependence of these properties on the cure conditions of a polydimethyl-siloxane (PDMS) elastomer; where both cure temperature and base-to-catalyst ratio were varied. The PDMS elastomer was evaluated as a bulk material and an impregnation matrix within a lightweight glass veil support. The E-glass support was selected for mechanical stiffness and dielectric strength. This work has shown a correlation between cure conditions and material physical properties. Tensile strength increased with cure temperature whereas breakdown voltage tended to be independent of process variations. The results will be used to direct material formulation based on specific insulation requirements.

Influence of Chromium Doping on Electrical and Magnetic Behavior of Nd0.5Sr0.5MnO3 System

NASA Astrophysics Data System (ADS)

Lalitha, G.; Pavan Kumar, N.; Venugopal Reddy, P.

2018-04-01

With a view to understand the influence of chromium doping at the Mn site on the electrical and magnetic behavior of the Nd0.5Sr0.5MnO3 manganite system, a series of samples were prepared by the citrate sol-gel route method. The samples were characterized structurally by XRD. A systematic investigation of electrical resistivity over a temperature range 5-300 K was carried out mainly to understand the magneto-transport behavior in these materials. Studies on the variation of magnetization with temperature over a temperature range 80-330 K were undertaken. Investigation of magnetization at different magnetic fields at two different temperatures, viz. 80 and 300 K, was also carried out. The results show that chromium doping gave typical electrical and magnetic properties. It has been concluded that the coexistence of charge ordered and ferromagnetic phases induced by chromium doping plays an important role in the low-temperature behavior of the system.

Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion

NASA Astrophysics Data System (ADS)

Kocyigit, Adem; Orak, İkram; Turut, Abdulmecit

2018-03-01

Owing to importance of ZnO in electronics, Au/ZnO/n-type Si device was fabricated to investigate its dielectric properties by aid of capacitance-conductance-voltage measurements. While the ZnO thin film layer on the n-type Si was formed by atomic layer deposition (ALD) technique, the rectifying and ohmic contacts were obtained by thermal evaporation. The surface morphology of ZnO thin film was characterized using atomic force microscopy (AFM) to show its compatibility as interfacial layer in the Au/ZnO/n-type Si device. The dielectric properties of the device were examined in terms of dielectric parameters such as dielectric constant (ɛ‧), dielectric loss (ɛ″), loss tangent (tan δ), the real and imaginary parts of electric modulus (M ‧ and M ″) and ac electrical conductivity (σ) depending on applied voltages (from -1 to 2 V) and temperatures (from 140 K to 360 K) ranges. The results have revealed that interfacial polarization and charge carriers are the important parameters to affect the dielectric properties of the device with changing temperature. The device can be used at wide range temperatures for diode applications.

Zero temperature coefficient of resistance of the electrical-breakdown path in ultrathin hafnia

NASA Astrophysics Data System (ADS)

Zhang, H. Z.; Ang, D. S.

2017-09-01

The recent widespread attention on the use of the non-volatile resistance switching property of a microscopic oxide region after electrical breakdown for memory applications has prompted basic interest in the conduction properties of the breakdown region. Here, we report an interesting crossover from a negative to a positive temperature dependence of the resistance of a breakdown region in ultrathin hafnia as the applied voltage is increased. As a consequence, a near-zero temperature coefficient of resistance is obtained at the crossover voltage. The behavior may be modeled by (1) a tunneling-limited transport involving two farthest-spaced defects along the conduction path at low voltage and (2) a subsequent transition to a scattering-limited transport after the barrier is overcome by a larger applied voltage.

Polymer nanocomposite dielectric and electrical properties with quantum dots nanofiller

NASA Astrophysics Data System (ADS)

Ahmed, R. M.; Morsi, R. M. M.

2017-10-01

Nanocomposite films of different contents of CdSe/ZnS quantum dots nanoparticles embedded in hosting matrix of polyvinyl chloride (PVC) were prepared by simple solution casting method. Electrical and dielectric properties of nanocomposites films were investigated in the temperature range 323-393 (K) and at frequencies (50-2000) kHz. The frequency dependence of AC conductivity was following the universal power law. The values of the frequency exponent, s, revealed that the conduction mechanism at low temperature is considered by small polaron tunneling model, whereas at high temperature, it is related to CBH model. The activation energy values (ΔE) were depending on nanoparticle concentration as well as frequency. Also, X-ray diffraction (XRD) enabled approximately estimating the average particle size of the nanoparticles incorporated in PVC.

Investigation of electrical and optical properties of low temperature titanium nitride grown by rf-magnetron sputtering

NASA Astrophysics Data System (ADS)

Sosnin, D.; Kudryashov, D.; Mozharov, A.

2017-11-01

Titanium nitride is a promising material due to its low resistivity, high hardness and chemical inertness. Titanium nitride (TiN) can be applied as an ohmic contact for n-GaN and rectifying contact for p-GaN and also as a part of perovskite solar cell. A technology of TiN low temperature reactive rf-magnetron sputtering has been developed. Electrical and optical properties of titanium nitride were studied as a function of the rf-power and gas mixture composition. Reflectance and transmittance spectra were measured. Cross-section and surface SEM image were obtained. 250 nm thin films of TiN with a resistivity of 23.6 μOm cm were obtained by rf-magnetron sputtering at low temperature.

Growth of pure ZnO thin films prepared by chemical spray pyrolysis on silicon

NASA Astrophysics Data System (ADS)

Ayouchi, R.; Martin, F.; Leinen, D.; Ramos-Barrado, J. R.

2003-01-01

Structural, morphological, optical and electrical properties of ZnO thin films prepared by chemical spray pyrolysis from zinc acetate (Zn(CH 3COO) 2 2H 2O) aqueous solutions, on polished Si(1 0 0), and fused silica substrates for optical characterization, have been studied in terms of deposition time and substrate temperature. The growth of the films present three regimes depending on the substrate temperature, with increasing, constant and decreasing growth rates at lower, middle, and higher-temperature ranges, respectively. Growth rate higher than 15 nm min -1 can be achieved at Ts=543 K. ZnO film morphological and electrical properties have been related to these growth regimes. The films have been characterized by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.

Investigation on structural and electrical properties of Fe doped ZnO nanoparticles synthesized by solution combustion method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ram, Mast, E-mail: mastram1999@yahoo.com; Bala, Kanchan; Sharma, Hakikat

In the present study, nanoparticles of Fe doped zinc oxide (ZnO) [Zn{sub 1-x}Fe{sub x}O where x=0.0, 0.01, 0.02, 0.03 and 0.05] were prepared by cost effective solution combustion method. The powder X-ray diffractometry confirms the formation of single phase wurtzite structure. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigate the micrsostructure of Fe-doped ZnO nanoparticles. The DC electrical conductivity was found to increase with temperature and measurement was carried out in the temperature range of 300-473K. DC electrical conductivity increases with temperature and decreases with Fe doping concentration.

Disorder induced magnetism and electrical conduction in La doped Ca2FeMoO6 double perovskite

NASA Astrophysics Data System (ADS)

Poddar, Asok; Bhowmik, R. N.; Muthuselvam, I. Panneer

2010-11-01

We report the magnetism and electrical transport properties of La doped Ca2FeMoO6 double perovskite. Reduction in magnetic moment, nonmonotonic variation in magnetic ordering temperature (TC), increasing magnetic hardness, low temperature resistivity upturn, and loss of metallic conductivity are some of the major changes that we observed due to La doping induced disorder in double perovskite structure. The increase in magnetic disorder in La doped samples and its effect on TC is more consistent with the mean field theory. The modification in electronic band structure due to La doping is understood by establishing a correlation between the temperature dependence of electrical conductivity and thermoelectric power.

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

NASA Astrophysics Data System (ADS)

Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

2016-10-01

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

PubMed Central

Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

2016-01-01

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully. PMID:27725695

Magnetically induced electrical transport and dielectric properties of 3d transition elemental substitution at the Mn-site in Nd0.67Ba0.33MnO3 manganites

NASA Astrophysics Data System (ADS)

Sudakshina, B.; Arun, B.; Chandrasekhar, K. Devi; Yang, H. D.; Vasundhara, M.

2018-05-01

We have investigated the temperature dependence of electrical transport and dielectric properties along with magnetoresistance and magneto dielectric behavior in Nd0.67Ba0.33Mn0.9TR0.1O3 (TR= Cr, Fe, Co, Ni, Cu) manganites. All the compounds crystallized into an orthorhombic structure with Imma space group. Nd0.67Ba0.33MnO3 shows insulating to metallic behavior at intermediate temperatures, but, with the substitution of transitional elements it shows insulating in nature, down to lowest temperature measured for all the compounds. Dielectric measurement shows the intrinsic behavior of these lossy materials. A large value of magneto resistance is obtained for all the compounds and considerable amount of magneto-dielectric effect is shown for all the substituted compounds at lower temperatures.

Electrical and thermoluminescence properties of γ-irradiated La2CuO4 crystals

NASA Astrophysics Data System (ADS)

El-Kolaly, M. A.; Abd El-Kader, H. I.; Kassem, M. E.

1994-12-01

Measurements of the electrical properties of unirradiated as well as ?-irradiated La2CuO4 crystals were carried out at different temperatures in the frequency range of 0.1-100 kHz. Thermoluminescence (TL) studies were also performed on such crystals in the temperature range of 300-600K. The conductivity of the unirradiated La2CuO4 crystals were found to obey the power law frequency dependence at each measured temperature below the transition temperature (Tc = 450K). The activation energies for conduction and dielectric relaxation time have been calculated. The TL response and the dc resistance were found to increase with ?-irradiation dose up to 9-10 kGy. The results showed that the ferroelastic domain walls of La2CuO4 crystal as well as its TL traps are sensitive to ?-raditaion. This material can be used in radiation measurements in the range 225 Gy-10 kGy.

Characterisation of electrical resistance for CMC Materials up to 1200 °C

NASA Astrophysics Data System (ADS)

Stäbler, T.; Böhrk, H.; Voggenreiter, H.

2017-12-01

Damage to thermal protection systems (TPS) during atmospheric re-entry is a severe safety issue, especially when considering re-usability of space transportation systems. There is a need for structural health monitoring systems and non-destructive inspection methods. However, damages are hard to detect. When ceramic matrix composites, in this case carbon fibre reinforced silicon carbide (C/C-SiC), are used as a TPS, the electrical properties of the present semiconductor material can be used for health monitoring, since the resistivity changes with damage, strain and temperature. In this work the electrical resistivity as a function of the material temperature is analysed eliminating effects of thermal electricity and the thermal coefficient of electrical resistance is determined. A sensor network is applied for locally and time resolved monitoring of the 300 mm x 120 mm x 3 mm panel shaped samples. Since the material is used for atmospheric re-entry it needs to be characterised for a wide range of temperatures, in this case as high as 1200 °C. Therefore, experiments in an inductively heated test bench were conducted. Firstly, a reference sample was used with thermocouples for characterising the temperature distribution across the sample surface. Secondly, electrical resistance under heat load was measured, time and spatially resolved. Results will be shown and discussed in terms of resistance dependence on temperature, thermal coefficient of electrical resistance, thermal electricity and electrical path orientation including an analysis on effective conducting cross section. Conversely, the thermal coefficient can also be used to determine the material temperature as a function of electrical resistance.

Electrical and Optical Characteristics of Undoped and Se-Doped Bi2S3 Transistors

NASA Astrophysics Data System (ADS)

Kilcoyne, Colin; Alsaqqa, Ali; Rahman, Ajara A.; Whittaker-Brooks, Luisa; Sambandamurthy, G.

Semiconducting chalcogenides have been drawing increased attention due to their interesting physical properties, especially in low dimensional structures. Bi2S3 has demonstrated a high optical absorption coefficient, a large bulk mobility, small bandgap, high Seebeck coefficient, and low thermal conductivity. These properties make it a good candidate for optical, electric and thermoelectric applications. However, control over the electrical properties for enhanced thermoelectric performance and optical applications is desired. We present electrical transport and optical properties from individual nanowire and few-layer transistors of single crystalline undoped and Se-doped Bi2S3-xSex. All devices exhibit n-type semiconducting behavior and the ON/OFF ratio, mobility, and conductivity noise behavior are studied as functions of dopant concentration, temperature, and charge carrier density in different conduction regimes. The roles of dopant driven scattering mechanisms and mobility/carrier density fluctuations will be discussed. The potential for this series of materials as optical and electrical switches will be presented. NSF DMR.

About the feasibilities of controlling the properties of thermoelectric energy converters using optical radiation

NASA Astrophysics Data System (ADS)

Kshevetsky, Oleg S.

2018-01-01

We represent evaluating analysis of the feasibilities for controlling the properties of thermoelectric energy converters using EM radiation in the regimes of cooling, heating, electromotive force generation, or electric current generation. Thus we investigate the influence of optical radiation both on electric conductivity and thermo-electromotive force coefficient of thermoelectric materials. We also discuss promising applications for controlling the properties of thermoelectric energy converters using EM radiation. We represent the results of experimental study of positionsensitive energy converters in the regimes of electromotive force generation and the electric current generation (in part, photo-thermoelectric position-sensitive temperature detectors), position-sensitive photo-thermoelectric energy converters in the regimes of cooling, heating, parallel photoelectric and thermoelectric conversion of sun-light optical radiation into electric power.

Materials characterization study of conductive flexible second surface mirrors

NASA Technical Reports Server (NTRS)

Levadou, F.; Bosma, S. J.; Paillous, A.

1981-01-01

The status of prequalification and qualification work on conductive flexible second surface mirrors is described. The basic material is FEP Teflon witn either aluminium or silver vacuum deposited reflectors. The top layer has been made conductive by deposition of layer of a indium oxide. The results of a prequalification program comprised of decontamination, humidity, thermal cycling, thermal shock and vibration tests are presented. Thermo-optical and electrical properties. The results of a prequalification program comprised of decontamination, humidity, thermal cycling, thermal shock and vibration tests are presented. Thermo-optical and electrical properties, the electrostatic behavior of the materials under simulated substorm environment and electrical conductivity at low temperatures are characterized. The effects of simulated ultra violet and particles irradiation on electrical and thermo-optical properties of the materials are also presented.

Synthesis and properties of the compound: LiNi 3/5Cu 2/5VO 4

NASA Astrophysics Data System (ADS)

Ram, Moti

2009-12-01

The LiNi 3/5Cu 2/5VO 4 is synthesized by solution-based chemical method and its formation has been checked by X-ray diffraction (XRD) study. XRD study shows a tetragonal unit cell structure with lattice parameters of a = 11.6475 (18) Å, c = 2.4855 (18) Å and c/ a = 0.2134 Å. Electrical properties are verified using complex impedance spectroscopy (CIS) technique. Complex impedance analysis reveals following points: (i) the bulk contribution to electrical properties up to 200 °C, (ii) the bulk and grain boundary contribution at T ≥ 225 °C, (iii) the presence of temperature dependent electrical relaxation phenomena in the material. D.c. conductivity study indicates that electrical conduction in the material is a thermally activated process.

Investigation of dielectric properties of polymer composites reinforced with carbon nanotubes in the frequency band of 0.01 Hz - 10 MHz

NASA Astrophysics Data System (ADS)

Goshev, A. A.; Eseev, M. K.; Kapustin, S. N.; Vinnik, L. N.; Volkov, A. S.

2016-08-01

The goal of this work is experimental study of dielectric properties of polymer nanocomposites reinforced with multiwalled carbon nanotubes (MWCNTs) in alternating electric field in low frequency band of 0.01 Hz - 10 MHz. We investigated the influence, functionalization degree, aspect ratio, concentration of carbon nanotubes (CNTs) on dielectric properties of polymer sample. We also studied the dependence of dielectric properties on the polymerization temperature. The dependence of CNTs agglomeration on sample polymerization temperature and temperature's influence on conductivity has been shown. We conducted model calculation of percolation threshold and figured out its dependence on CNTs aspect ratio.

The time and temperature dependence of the thermoelectric properties of silicon-germanium alloy

NASA Technical Reports Server (NTRS)

Raag, V.

1975-01-01

Experimental data on the electrical resistivity and Seebeck coefficient of n-type and p-type silicon-germanium alloys are analyzed in terms of a solid-state dopant precipitation model proposed by Lifshitz and Slyozov (1961). Experimental findings on the time and temperature dependence of the thermal conductivity of these two types of alloy indicate that the thermal conductivity of silicon-germanium alloys changes with time, contrary to previous hypothesis. A preliminary model is presented which stipulates that the observed thermal conductivity decrease in silicon-germanium alloys is due partly to dopant precipitation underlying the electrical property changes and partly to enhanced alloying of the material. It is significant that all three properties asymptotically approach equilibrium values with time. Total characterization of these properties will enable the time change to be fully compensated in the design of a thermoelectric device employing silicon-germanium alloys.

Band Structures and Transport Properties of High-Performance Half-Heusler Thermoelectric Materials by First Principles.

PubMed

Fang, Teng; Zhao, Xinbing; Zhu, Tiejun

2018-05-19

Half-Heusler (HH) compounds, with a valence electron count of 8 or 18, have gained popularity as promising high-temperature thermoelectric (TE) materials due to their excellent electrical properties, robust mechanical capabilities, and good high-temperature thermal stability. With the help of first-principles calculations, great progress has been made in half-Heusler thermoelectric materials. In this review, we summarize some representative theoretical work on band structures and transport properties of HH compounds. We introduce how basic band-structure calculations are used to investigate the atomic disorder in n-type M NiSb ( M = Ti, Zr, Hf) compounds and guide the band engineering to enhance TE performance in p-type Fe R Sb ( R = V, Nb) based systems. The calculations on electrical transport properties, especially the scattering time, and lattice thermal conductivities are also demonstrated. The outlook for future research directions of first-principles calculations on HH TE materials is also discussed.

Band Structures and Transport Properties of High-Performance Half-Heusler Thermoelectric Materials by First Principles

PubMed Central

Fang, Teng; Zhao, Xinbing

2018-01-01

Half-Heusler (HH) compounds, with a valence electron count of 8 or 18, have gained popularity as promising high-temperature thermoelectric (TE) materials due to their excellent electrical properties, robust mechanical capabilities, and good high-temperature thermal stability. With the help of first-principles calculations, great progress has been made in half-Heusler thermoelectric materials. In this review, we summarize some representative theoretical work on band structures and transport properties of HH compounds. We introduce how basic band-structure calculations are used to investigate the atomic disorder in n-type MNiSb (M = Ti, Zr, Hf) compounds and guide the band engineering to enhance TE performance in p-type FeRSb (R = V, Nb) based systems. The calculations on electrical transport properties, especially the scattering time, and lattice thermal conductivities are also demonstrated. The outlook for future research directions of first-principles calculations on HH TE materials is also discussed. PMID:29783759

Structural and Electromagnetic Properties of Ni-Mn-Ga Thin Films Deposited on Si Substrates

NASA Astrophysics Data System (ADS)

Pereira, M. J.; Lourenço, A. A. C. S.; Amaral, V. S.

2014-07-01

Ni2MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni2MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 ºC). Film thicknesses in the range 10-120 nm were obtained. A study of the structural, magnetic and electrical properties of the films is presented. We find that the deposited films show some degree of crystallinity, with coexisting cubic and tetragonal structural phases, the first one being preponderant over the latter, particularly in the thinner films. The films possess soft magnetic properties and their coercivity is thickness dependent in the range 15-200 Oe at 300K. Electrical resistivity measurements signal the structural transition and suggest the occurrence of avalanche and return-point memory effects, in temperature cycling through the magnetic/structural transition range.

Fabrication of Heterojunction Diode Based on n-ZnO Nanowires/p-Si Substrate: Temperature Dependent Transport Characteristics.

PubMed

Badran, R I; Umar, Ahmad

2017-01-01

Herein, we report the growth and characterizations of well-crystalline n-ZnO nanowires assembled in micro flower-shaped morphologies. The nanowires are grown on p-Silicon substrate and characterized in terms of their structural, morphological and electrical properties. Temperature dependent transport characteristics of the fabricated n-ZnO/p-Si heterojunction diode were examined. The morphological studies revealed that the nanowires are grown in high-density and arrange in special micro flower shaped morphology. The structural characterizations confirmed that the nanowires are well-crystalline and possessing wurtzite hexagonal phase. The electrical properties were evaluated by examining the I–V characteristics of the fabricated n-ZnO/p-Si heterojunction diode. The I–V characteristics were studied at temperature <300 K and ≥300 K in the forward and reverse bias conditions. The detailed temperature dependent electrical properties revealed that the fabricated heterojunction assembly shows a diode-like behavior with a turn-on voltage of 5 V at almost all temperatures and the delivered current changes between ˜1 to ˜5 μA when temperature changes from 77 K to 425 K. The rectifying behavior of the fabricated heterojunction diode, at 5 V, was demonstrated by rectifying ratio of ˜4 at 77 K which decreases to ˜1.5 at 425 K. This analysis also showed that the mean potential barrier of the fabricated heterojunction (˜1.2 eV) is larger than the energy difference (0.72 eV) of the work functions between Si and ZnO.

Changes in physical properties of graphene oxide with thermal reduction

NASA Astrophysics Data System (ADS)

Pandit, Bhishma; Jo, Chang Hee; Joo, Kwan Seon; Cho, Jaehee

2017-08-01

Reduced graphene oxide (rGO) has attracted significant attention as an easily fabricable twodimensional material. Depending on the oxygen-containing functional groups (OFGs) in an rGO specimen, the optical and electrical properties can vary significantly, directly affecting the performance of devices in which rGO is implemented. Here, we investigated the optical and electrical properties of GO treated with various annealing (reduction) temperatures from 350 to 950 °C in H2 ambient. Using diverse characteristic tools, we found that the transmittance, nanoscale domain size, OFGs in GO and rGO, and Schottky barrier height (SBH) measured on n-type GaN are significantly influenced by the annealing temperature. The relative intensity of the defect-induced band in Raman spectroscopy showed a minimum at the annealing temperature of approximately 350 °C, before the OFGs in rGO showed vigorous changes in relative content. When the domain size of rGO reached a minimum at the annealing temperature of 650 °C, the SBH of rGO/GaN showed the maximum value of 1.07 eV.

EFFECTS OF TRITIUM GAS EXPOSURE ON THE GLASS TRANSITION TEMPERATURE OF EPDM ELASTOMER AND ON THE CONDUCTIVITY OF POLYANILINE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clark, E; Marie Kane, M

2008-12-12

Four formulations of EPDM (ethylene-propylene diene monomer) elastomer were exposed to tritium gas initially at one atmosphere and ambient temperature for between three and four months in closed containers. Material properties that were characterized include density, volume, mass, appearance, flexibility, and dynamic mechanical properties. The glass transition temperature was determined by analysis of the dynamic mechanical property data per ASTM standards. EPDM samples released significant amounts of gas when exposed to tritium, and the glass transition temperature increased by about 3 C. during the exposure. Effects of ultraviolet and gamma irradiation on the surface electrical conductivity of two types ofmore » polyaniline films are also documented as complementary results to planned tritium exposures. Future work will determine the effects of tritium gas exposure on the electrical conductivity of polyaniline films, to demonstrate whether such films can be used as a sensor to detect tritium. Surface conductivity was significantly reduced by irradiation with both gamma rays and ultraviolet light. The results of the gamma and UV experiments will be correlated with the tritium exposure results.« less

Electrical aging markers for EPR-based low-voltage cable insulation wiring of nuclear power plants

NASA Astrophysics Data System (ADS)

Verardi, L.; Fabiani, D.; Montanari, G. C.

2014-01-01

This paper presents results of electrical property measurements on EPR-based insulations of low-voltage power cables used in nuclear power plants. The specimens underwent accelerated aging through the simultaneous application of high temperature and gamma-radiation. Mechanical properties and the dielectric response at different frequencies were investigated. Results showed significant variation of the electrical and mechanical properties of aged cables at low frequencies, i.e. lower than 10-2 Hz. In particular, the real and imaginary parts of permittivity increase with aging time, accumulated dose and stress levels applied showing good correlation with elongation at break, which decreases as a function of extent of insulation aging.

Impedance Spectroscopy Study of the Electrical Properties of Cation-Substituted Barium Hexaaluminate Ceramics

NASA Astrophysics Data System (ADS)

Belyaev, B. A.; Drokin, N. A.; Poluboyarov, V. A.

2018-02-01

We report on the behavior of frequency and temperature dependences of the impedance of a measuring cell in the form of a parallel-plate capacitor filled with barium hexaaluminate ceramics with four aluminum cations replaced by iron (BaO · 2Fe2O3 · 4Al2O3). The measurements have been performed in the frequency range of 0.5-108 Hz at temperatures of 20-375°C. A technique for determining the electrical properties of the investigated ceramics is proposed, which is based on an equivalent electric circuit allowing the recorded impedance spectra to be approximated with sufficiently high accuracy. The established spectral features are indicative of the presence of two electric relaxation times different from each other by three orders of magnitude. This fact is explained by the difference between the charge transport processes in the bulk of crystallites and thin intercrystallite spacers, for which the charge activation energies have been determined.

Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus

DOE PAGES

Liu, Huili; Sung Choe, Hwan; Chen, Yabin; ...

2017-09-05

Black phosphorus (BP) is a layered semiconductor with a high mobility of up to ~1000 cm 2 V -1 s -1 and a narrow bandgap of ~0.3 eV, and shows potential applications in thermoelectrics. In stark contrast to most other layered materials, electrical and thermoelectric properties in the basal plane of BP are highly anisotropic. In order to elucidate the mechanism for such anisotropy, we fabricated BP nanoribbons (~100 nm thick) along the armchair and zigzag directions, and measured the transport properties. It is found that both the electrical conductivity and Seebeck co efficient increase with temperature, a behavior contradictorymore » to that of traditional semiconductors. The three-dimensional variable range hopping model is adopted to analyze this abnormal temperature dependency of electrical conductivity and Seebeck coefficient. Furthermore, the hopping transport of the BP nanoribbons, attributed to high density of trap states in the samples, provides a fundamental understanding of the anisotropic BP for potential thermoelectric applications.« less

Variable range hopping electric and thermoelectric transport in anisotropic black phosphorus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Huili; Sung Choe, Hwan; Chen, Yabin

Black phosphorus (BP) is a layered semiconductor with a high mobility of up to ~1000 cm 2 V -1 s -1 and a narrow bandgap of ~0.3 eV, and shows potential applications in thermoelectrics. In stark contrast to most other layered materials, electrical and thermoelectric properties in the basal plane of BP are highly anisotropic. In order to elucidate the mechanism for such anisotropy, we fabricated BP nanoribbons (~100 nm thick) along the armchair and zigzag directions, and measured the transport properties. It is found that both the electrical conductivity and Seebeck co efficient increase with temperature, a behavior contradictorymore » to that of traditional semiconductors. The three-dimensional variable range hopping model is adopted to analyze this abnormal temperature dependency of electrical conductivity and Seebeck coefficient. Furthermore, the hopping transport of the BP nanoribbons, attributed to high density of trap states in the samples, provides a fundamental understanding of the anisotropic BP for potential thermoelectric applications.« less

Electrical conductivity and dielectric relaxation of 2-(antipyrin-4-ylhydrazono)-2-(4-nitrophenyl)acetonitrile

NASA Astrophysics Data System (ADS)

El-Menyawy, E. M.; Zedan, I. T.; Nawar, H. H.

2014-03-01

The electrical and dielectric properties of the synthesized 2-(antipyrin-4-ylhydrazono)-2-(4-nitrophenyl)acetonitrile (AHNA) have been studied. The direct and alternating current (DC and AC) conductivities and complex dielectric constant were investigated in temperature range 303-403 K. The AC conductivity and dielectric properties of AHNA were investigated over frequency range 100 Hz-5 MHz. From DC and AC measurements, electrical conduction is found to be a thermally activated process. The frequency-dependent AC conductivity obeys Jonscher's universal power law in which the frequency exponent decreases with increasing temperature. The correlated barrier hopping (CBH) is the predominant model for describing the charge carrier transport in which the electrical parameters are evaluated. The activation energy is found to decrease with increasing frequency. The behaviors of dielectric and dielectric loss are discussed in terms of a polarization mechanism. The dielectric loss shows frequency power law from which the maximum barrier height is determined as 0.19 eV in terms of the Guintini model.

Effect of the type of metal on the electrical conductivity and thermal properties of metal complexes: The relation between ionic radius of metal complexes and electrical conductivity

NASA Astrophysics Data System (ADS)

Morgan, Sh. M.; El-Ghamaz, N. A.; Diab, M. A.

2018-05-01

Co(II) complexes (1-4) and Ni(II) complexes (5-8) were prepared and characterized by elemental analysis, IR spectra and thermal analysis data. Thermal decomposition of all complexes was discussed using thermogravimetric analysis. The dielectric properties and alternating current conductivity were investigated in the frequency range 0.1-100 kHz and temperature range 300-660 K. The thermal activation energies of electrical conductivity (ΔE1 and ΔE2) values for complexes were calculated and discussed. The values of ΔE1 and ΔE2 for complexes (1-8) were found to decrease with increasing the frequency. Ac electrical conductivity (σac) values increases with increasing temperatures and the values of σac for Co(II) complexes are greater than Ni(II) complexes. Co(II) complexes showed a higher conductivity than other Ni(II) complexes due to the higher crystallinity as confirmed by X-ray diffraction analysis.

Dielectric, electric and thermal properties of carboxylic functionalized multiwalled carbon nanotubes impregnated polydimethylsiloxane nanocomposite

NASA Astrophysics Data System (ADS)

Sagar, Sadia; Iqbal, Nadeem; Maqsood, Asghari

2013-06-01

The dielectric, electric and thermal properties of carboxylic functionalized multiwalled carbon nanotubes (F-MWCNT) incorporated into the polydimethylsiloxane (PDMS) were evaluated to determine their potential in the field of electronic materials. Carboxylic functionalization of the pristine multi walled carbon tubes (Ps-MWCNT) was confirmed through Fourier transform infrared spectroscopy, X-ray diffraction patterns for both Ps-MWCNTs and F-MWCNTs elaborated that crystalline behavior did not change with carboxylic moieties. Thermogravimetric and differential thermal analyses were performed to elucidate the thermal stability with increasing weight % addition of F-MWCNTs in the polymer matrix. Crystallization/glass transition / melting temperatures were evaluated using differential scanning calorimeter and it was observed that glass transition and crystallization temperatures were diminished while temperatures of first and second melting transitions were progressed with increasing F-MWCNT concentration in the PDMS matrix. Scanning electron microscopy and energy dispersive x-ray spectroscopy were carried out to confirm the morphology, functionalization, and uniform dispersion of F-MWCNTs in the polymer matrix. Electrical resistivity at temperature range (100-300°C), dielectric loss (tanδ) and dielectric parameters (epsilon/ epsilon//) were measured in the frequency range (1MHz-3GHz). The measured data simulate that the aforementioned properties were influenced by increasing filler contents in the polymer matrix because of the high polarization of conductive F-MWCNTs at the reinforcement/polymer interface.

Effects of drying temperature on tomato-based thin film as self-powered UV photodetector

NASA Astrophysics Data System (ADS)

Thu, Myo Myo; Mastuda, Atsunori; Cheong, Kuan Yew

2018-07-01

In this work, tomato thin-film is used as an active natural organic layer for UV photodetector. The effects of drying temperature (60-140 °C) on structural, chemical, electrical and UV sensing properties of tomato thin-film have been investigated. The photodetector consists of a glass substrate/tomato thin-film active layer/interdigitated aluminium electrode structure. As the drying temperature increases, surface and density of tomato thin-film is smoother and denser with thinner physical thickness. Chemical functional groups as a function of drying temperature is evaluated and correlated with the electrical property of thin film. A comparison between dark and UV (B and C) illumination with respect to the electrical property has been revealed and the observation has been linked to the active chemical compounds that controlling antioxidant activity in the tomato. By drying the tomato thin-film at 120°C, a self-powered (V = 0 V) photodetector that is able to selectively detecting UV-C can be obtained with external quantum efficiency (η) of 2.53 × 10-7%. While drying it at 140 °C, the detector is better in detecting UV-B when operating at either 5 or -5 V with η of 7.7384 × 10-6% and 8.87 × 10-6%, respectively. The typical response time for raising and falling for all samples are less than 0.3 s.

Understanding the low temperature electrical properties of nanocrystalline tin oxide for gas sensor applications

NASA Astrophysics Data System (ADS)

Drake, Christina Hartsell

Nanocrystalline metal/metal oxide is an important class of transparent and electronic materials due to its potential use in many applications, including gas sensors. At the nanoscale, many of the phenomena observed that give nanocrystalline semiconducting oxide enhanced performance as a gas sensor material over other conventional engineering materials is still poorly understood. This study is aimed at understanding the low temperature electrical and chemical properties of nanocrystalline SnO2 that makes it suitable for room temperature gas detectors. Studies were carried out in order to understand how various synthesis methods affect the surfaces on the nano-oxides, interactions of a target gas (in this study hydrogen) with different surface species, and changes in the electrical properties as a function of dopants and grain size. A correlation between the surface reactions and the electrical response of doped nanocrystalline metal-oxide-semiconductors exposed to a reducing gas is established using Fourier Transform Infrared (FTIR) Spectroscopy attached to a specially built custom designed catalytic cell. First principle calculations of oxygen vacancy concentrations from absorbance spectra are presented. FTIR is used for effectively screening of these nanostructures for gas sensing applications. The effect of processing temperature on the microstructural evolution and on the electronic properties of nanocrystalline trivalent doped-SnO 2 is also presented. This study includes the effect of dopants (In and Ce) on the growth of nano-SnO2, as well as their effects on the electronic properties and gas sensor behavior of the nanomaterial at room temperature. Band bending affects are also investigated for this system and are related to enhanced low temperature gas sensing. The role and importance of oxygen vacancies in the electronic and chemical behavior of surface modified nanocrystalline SnO2 are explored in this study. A generalized explanation for the low temperature gas sensor behavior of nanocrystalline oxide is presented that can be generalized to other nano-oxide systems and be useful in specific engineering of other nanomaterials. Deeper understanding of how nano-oxides react chemically and electronically would be extremely beneficial to issues present in current low cost, low temperature sensor technology. Ability to exactly monitor and then engineer the chemistry of nanostructures in the space charge region as well as the surface is also of great significance. Knowledge of the mechanisms responsible for enhanced sensor response in this material system could viably be applied to other material systems for sensor applications.

Size effects in electrical and magnetic properties of quasi-one-dimensional tin wires in asbestos

NASA Astrophysics Data System (ADS)

Chernyaev, A. V.; Shamshur, D. V.; Fokin, A. V.; Kalmykov, A. E.; Kumzerov, Yu. A.; Sorokin, L. M.; Parfen'ev, R. V.; Lashkul, A.

2016-03-01

Bulk composites have been prepared based on one-dimensional fibers of natural chrisothil-asbestos with various internal diameters ( d = 6-2.5 nm) filled with tin. The electrical and magnetic properties of quasi-one-dimensional Sn wires have been studied at low temperatures. The electrical properties have been measured at T = 300 K at a pressure P = 10 kbar. It has been found that the superconducting (SC) characteristics of the nanocomposites (critical temperature T c and critical magnetic field H c) increase as the Sn filament diameter decreases. The temperature spreading of the resistive SC transition also increases as the Sn filament diameter decreases, which is explained by the SC order parameter fluctuations. The size effects (the increase in critical temperature T c and transition width Δ T c) in Sn nanofilaments are well described by the independent Aslamazov-Larkin and Langer-Ambegaokara fluctuation theories, which makes it possible to find the dependence of T c of the diffuse SC transition on the nanowire diameter. Using the temperature and magnetic-field dependences of the magnetic moment M( T, H), it has been found that the superconductor-normal metal phase diagram of the Sn-asbestos nanocomposite has a wider region of the SC state in T and H as compared to the data for bulk Sn. The magnetic properties of chrisotil-asbestos fibers unfilled with Sn have been studied. It has been found that the Curie law is fulfilled and that the superparamagnetism is absent in such samples. The obtained results indicate the absence of magnetically ordered impurities (magnetite) in the chrisotil-asbestos matrix, which allowed one to not consider the problem of the interaction of the magnetic subsystem of the asbestos matrix and the superconducting subsystem of Sn nanowires.

Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samal, Nigamananda; Du Hui; Luberoff, Russell

Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for themore » DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.« less

Size-dependent phase transition in methylammonium lead iodide perovskite microplate crystals

PubMed Central

Li, Dehui; Wang, Gongming; Cheng, Hung-Chieh; Chen, Chih-Yen; Wu, Hao; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2016-01-01

Methylammonium lead iodide perovskite has attracted considerable recent interest for solution processable solar cells and other optoelectronic applications. The orthorhombic-to-tetragonal phase transition in perovskite can significantly alter its optical, electrical properties and impact the corresponding applications. Here, we report a systematic investigation of the size-dependent orthorhombic-to-tetragonal phase transition using a combined temperature-dependent optical, electrical transport and transmission electron microscopy study. Our studies of individual perovskite microplates with variable thicknesses demonstrate that the phase transition temperature decreases with reducing microplate thickness. The sudden decrease of mobility around phase transition temperature and the presence of hysteresis loops in the temperature-dependent mobility confirm that the orthorhombic-to-tetragonal phase transition is a first-order phase transition. Our findings offer significant fundamental insight on the temperature- and size-dependent structural, optical and charge transport properties of perovskite materials, and can greatly impact future exploration of novel electronic and optoelectronic devices from these materials. PMID:27098114

High temperature dielectric properties of Apical, Kapton, Peek, Teflon AF, and Upilex polymers

NASA Technical Reports Server (NTRS)

Hammoud, A. N.; Baumann, E. D.; Overton, E.; Myers, I. T.; Suthar, J. L.; Khachen, W.; Laghari, J. R.

1992-01-01

Reliable lightweight systems capable of providing electrical power at the magawatt level are a requirement for future manned space exploration missions. This can be achieved by the development of high temperature insulating materials which are not only capable of surviving the hostile space environment but can contribute to reducing the mass and weight of the heat rejection system. In this work, Apical, Upilex, Kapton, Teflon AF, and Peek polymers are characterized for AC and DC dielectric breakdown in air and in silicone oil at temperatures up to 250 C. The materials are also tested in terms of their dielectric constant and dissipation factor at high temperatures with an electrical stress of 60 Hz, 200 V/mil present. The effects of thermal aging on the properties of the films are determined after 15 hours of exposure to 200 and 250 C, each. The results obtained are discussed and conclusions are made concerning the suitability of these dielectrics for use in capacitors and cable insulations in high temperature environments.

Size-dependent phase transition in methylammonium lead iodide perovskite microplate crystals

DOE PAGES

Li, Dehui; Wang, Gongming; Cheng, Hung -Chieh; ...

2016-04-21

Methylammonium lead iodide perovskite has attracted considerable recent interest for solution processable solar cells and other optoelectronic applications. The orthorhombic-to-tetragonal phase transition in perovskite can significantly alter its optical, electrical properties and impact the corresponding applications. Here, we report a systematic investigation of the size-dependent orthorhombic-to-tetragonal phase transition using a combined temperature-dependent optical, electrical transport and transmission electron microscopy study. Our studies of individual perovskite microplates with variable thicknesses demonstrate that the phase transition temperature decreases with reducing microplate thickness. The sudden decrease of mobility around phase transition temperature and the presence of hysteresis loops in the temperature-dependent mobility confirmmore » that the orthorhombic-to-tetragonal phase transition is a first-order phase transition. Lastly, our findings offer significant fundamental insight on the temperature-and size-dependent structural, optical and charge transport properties of perovskite materials, and can greatly impact future exploration of novel electronic and optoelectronic devices from these materials.« less

Effects of hot compression deformation temperature on the microstructure and properties of Al-Zr-La alloys

NASA Astrophysics Data System (ADS)

Yue, Xian-hua; Liu, Chun-fang; Liu, Hui-hua; Xiao, Su-fen; Tang, Zheng-hua; Tang, Tian

2018-02-01

The main goal of this study is to investigate the microstructure and electrical properties of Al-Zr-La alloys under different hot compression deformation temperatures. In particular, a Gleeble 3500 thermal simulator was used to carry out multi-pass hot compression tests. For five-pass hot compression deformation, the last-pass deformation temperatures were 240, 260, 300, 340, 380, and 420°C, respectively, where the first-pass deformation temperature was 460°C. The experimental results indicated that increasing the hot compression deformation temperature with each pass resulted in improved electrical conductivity of the alloy. Consequently, the flow stress was reduced after deformation of the samples subjected to the same number of passes. In addition, the dislocation density gradually decreased and the grain size increased after hot compression deformation. Furthermore, the dynamic recrystallization behavior was effectively suppressed during the hot compression process because spherical Al3Zr precipitates pinned the dislocation movement effectively and prevented grain boundary sliding.

High temperature dielectric properties of Apical, Kapton, Peek, Teflon AF, and Upilex polymers

NASA Astrophysics Data System (ADS)

Hammoud, A. N.; Baumann, E. D.; Overton, E.; Myers, I. T.; Suthar, J. L.; Khachen, W.; Laghari, J. R.

1992-06-01

Reliable lightweight systems capable of providing electrical power at the magawatt level are a requirement for future manned space exploration missions. This can be achieved by the development of high temperature insulating materials which are not only capable of surviving the hostile space environment but can contribute to reducing the mass and weight of the heat rejection system. In this work, Apical, Upilex, Kapton, Teflon AF, and Peek polymers are characterized for AC and DC dielectric breakdown in air and in silicone oil at temperatures up to 250 C. The materials are also tested in terms of their dielectric constant and dissipation factor at high temperatures with an electrical stress of 60 Hz, 200 V/mil present. The effects of thermal aging on the properties of the films are determined after 15 hours of exposure to 200 and 250 C, each. The results obtained are discussed and conclusions are made concerning the suitability of these dielectrics for use in capacitors and cable insulations in high temperature environments.

Electrical Transport Properties of Liquid Sn-Sb Binary Alloys

NASA Astrophysics Data System (ADS)

Thakore, B. Y.; Suthar, P. H.; Khambholja, S. G.; Jani, A. R.

2010-06-01

The study of electrical transport properties viz. electrical resistivity, thermo electrical power and thermal conductivity of liquid Sn-Sb binary alloys have been made by our well recognized single parametric model potential. In the present work, screening functions due to Hartree, Taylor, Ichimaru et al.. Farid et al.. and Sarkar et al.. have been employed to incorporate the exchange and correlation effects. The liquid alloy is studied as a function of its composition at temperature 823 K according to the Faber-Ziman model. Further, thermoelectric power and thermal conductivity have been predicted. The values of electrical resistivity of binary alloys computed with Ichimaru et al. and Farid et al.. screening function are in good agreement with the experimental data.

Review on dielectric properties of rare earth doped barium titanate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ismail, Fatin Adila, E-mail: fatinadilaismail@gmail.com; Osman, Rozana Aina Maulat, E-mail: rozana@unimap.edu.my; Frontier Materials Research, Seriab, 01000 Kangar, Perlis

2016-07-19

Rare earth doped Barium Titanate (BaTiO{sub 3}) were studied due to high permittivity, excellent electrical properties and have wide usage in various applications. This paper reviewed on the electrical properties of RE doped BaTiO{sub 3} (RE: Lanthanum (La), Erbium (Er), Samarium (Sm), Neodymium (Nd), Cerium (Ce)), processing method, phase transition occurred and solid solution range for complete study. Most of the RE doped BaTiO{sub 3} downshifted the Curie temperature (T{sub C}). Transition temperature also known as Curie temperature, T{sub C} where the ceramics had a transition from ferroelectric to a paraelectric phase. In this review, the dielectric constant of La-dopedmore » BaTiO{sub 3}, Er-doped BaTiO{sub 3}, Sm-doped BaTiO{sub 3}, Nd-doped BaTiO{sub 3} and Ce-doped BaTiO{sub 3} had been proved to increase and the transition temperature or also known as T{sub C} also lowered down to room temperature as for all the RE doped BaTiO{sub 3} except for Er-doped BaTiO{sub 3}.« less

Microstructure and electrical properties of CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shao, S. F.; Zhang, J. L.; Zheng, P.

2006-04-15

CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramics are prepared by the conventional solid-state reaction method under various sintering temperatures from 1000 to 1120 deg. C at an interval of 10 deg. C. Microstructures and crystalline structures are examined by scanning electronic microscopy and x-ray diffraction, respectively. Dielectric properties and complex impedances are investigated within the frequency range of 40 Hz-110 MHz over the temperature region from room temperature to 350 deg. C. It has been disclosed that the microstructures can be categorized into three different types: type A (with the small but uniform grain sizes), type B (with the bimodal distributionmore » of grain sizes) and type C (with the large and uniform grain sizes), respectively. The largeness of low-frequency dielectric permittivity at room temperature is closely related to the microstructure. Ceramics with different types of microstructures show the diverse temperature-dependent behaviors of electrical properties. However, the existence of some common characteristics is also found among them. For all of the ceramics, a Debye-type relaxation emerges in the frequency range of 100 Hz-100 kHz at high measuring temperatures, which has the larger dielectric dispersion strength than the one known in the frequency range above 100 kHz. Thus, the high-temperature dielectric dispersion exhibits a large low-frequency response and two Debye-type relaxations. Furthermore, all of the ceramics show three semicircles in the complex impedance plane. These semicircles are considered to represent individually different electrical mechanisms, among which the one in the low-frequency range arises most probably from the contribution of the domain boundaries, and the other two are ascribed to the contributions of the domains and the grain boundaries, respectively.« less

Boltzmann transport properties of ultra thin-layer of h-CX monolayers

NASA Astrophysics Data System (ADS)

Kansara, Shivam; Gupta, Sanjeev K.; Sonvane, Yogesh

2018-04-01

Structural, electronic and thermoelectric properties of monolayer h-CX (X= Al, As, B, Bi, Ga, In, P, N, Sb and Tl) have been computed using density functional theory (DFT). The structural, electronic band structure, phonon dispersion curves and thermoelectric properties have been investigated. h-CGa and h-CTl show the periodically lattice vibrations and h-CB and h-CIn show small imaginary ZA frequencies. Thermoelectric properties are obtained using BoltzTrap code with the constant relaxation time (τ) approximation such as electronic, thermal and electrical conductivity calculated for various temperatures. The results indicate that h-CGa, h-CIn, h-CTl and h-CAl have direct band gaps with minimum electronic thermal and electrical conductivity while h-CB and h-CN show the high electronic thermal and electrical conductivity with highest cohesive energy.

Effect of surface oxide films on the properties of pulse electric-current sintered metal powders

NASA Astrophysics Data System (ADS)

Xie, Guoqiang; Ohashi, Osamu; Yamaguchi, Norio; Wang, Airu

2003-11-01

Metallic powders with various thermodynamic stability oxide films (Ag, Cu, and Al powders) were sintered using a pulse electric-current sintering (PECS) process. Behavior of oxide films at powder surfaces and their effect on the sintering properties were investigated. The results showed that the sintering properties of metallic powders in the PECS process were subject to the thermodynamic stability of oxide films at particles surfaces. The oxide films at Ag powder surfaces are decomposed during sintering with the contact region between the particles being metal/metal bond. The oxide films at Cu powder surfaces are mainly broken via loading pressure at a low sintering temperature. At a high sintering temperature, they are mainly dissolved in the parent metal, and the contact regions turn into the direct metal/metal bonding. Excellent sintering properties can be received. The oxide films at Al powder surfaces are very stable, and cannot be decomposed and dissolved, but broken by plastic deformation of particles under loading pressure at experimental temperatures. The interface between particles is partially bonded via the direct metal/metal bonding making it difficult to achieve good sintered properties.

Short review of high-pressure crystal growth and magnetic and electrical properties of solid-state osmium oxides

NASA Astrophysics Data System (ADS)

Yamaura, Kazunari

2016-04-01

High-pressure crystal growth and synthesis of selected solid-state osmium oxides, many of which are perovskite-related types, are briefly reviewed, and their magnetic and electrical properties are introduced. Crystals of the osmium oxides, including NaOsO3, LiOsO3, and Na2OsO4, were successfully grown under high-pressure and high-temperature conditions at 6 GPa in the presence of an appropriate amount of flux in a belt-type apparatus. The unexpected discovery of a magnetic metal-insulator transition in NaOsO3, a ferroelectric-like transition in LiOsO3, and high-temperature ferrimagnetism driven by a local structural distortion in Ca2FeOsO6 may represent unique features of the osmium oxides. The high-pressure and high-temperature synthesis and crystal growth has played a central role in the development of solid-state osmium oxides and the elucidation of their magnetic and electronic properties toward possible use in multifunctional devices.

Physical and electrical properties of SrTiO3 and SrZrO3

NASA Astrophysics Data System (ADS)

Fashren Muhamad, Norhizatol; Aina Maulat Osman, Rozana; Sobri Idris, Mohd; Yasin, Mohd Najib Mohd

2017-11-01

Perovskite type oxide strontium titanate (SrTiO3) and strontium zirconate (SrZrO3) ceramic powder has been synthesized using conventional solid state reaction method. The powders were mixed and ground undergone calcinations at 1400°C for 12 h and sintered at 1550°C for 5h. X-ray Diffraction exposes physical properties SrTiO3 which exhibit cubic phase (space group: pm-3m) at room temperature meanwhile SrZrO3 has Orthorhombic phase (space group: pnma). The electrical properties such as dielectric constant (ɛr), dielectric loss (tan δ), and conductivity (σ) were studied in variation temperature and frequency. High dielectric constant of SrTiO3 and SrZrO3 were observed at 10 kHz for both samples about 240 and 21 respectively at room temperature. The dielectric loss of SrTiO3 and SrZrO3 is very low loss value approximately 0.00076 and 0.67512 indicates very good dielectric.

Small temperature coefficient of resistivity of graphene/graphene oxide hybrid membranes.

PubMed

Sun, Pengzhan; Zhu, Miao; Wang, Kunlin; Zhong, Minlin; Wei, Jinquan; Wu, Dehai; Zhu, Hongwei

2013-10-09

Materials with low temperature coefficient of resistivity (TCR) are of great importance in some areas, for example, highly accurate electronic measurement instruments and microelectronic integrated circuits. In this work, we demonstrated the ultrathin graphene-graphene oxide (GO) hybrid films prepared by layer-by-layer assembly with very small TCR (30-100 °C) in the air. Electrical response of the hybrid films to temperature variation was investigated along with the progressive reduction of GO sheets. The mechanism of electrical response to temperature variation of the hybrid film was discussed, which revealed that the interaction between graphene and GO and the chemical doping effect were responsible for the tunable control of its electrical response to temperature variation. The unique properties of graphene-GO hybrid film made it a promising candidate in many areas, such as high-end film electronic device and sensor applications.

Direct growth of ZnO tetrapod on glass substrate by Chemical Vapor Deposition Technique

NASA Astrophysics Data System (ADS)

Fadzil, M. F. M.; Rahman, R. A.; Azhar, N. E. A.; Aziz, T. N. T. A.; Zulkifli, Z.

2018-03-01

This research demonstrates the growth of ZnO tetrapod structure on glass substrate for different types of flow gas and at different growth temperatures. The study on the morphological structure and electrical properties of ZnO thin film growth by Chemical Vapour Deposition (CVD) technique showed that the optimum growth temperature was obtained at 750°C with ZnO nanotetrapod morphological structure. Introducing Nitrogen gas flow during the growth process exhibited leg-to-leg linking ZnO tetrapods morphology. The electrical properties of ZnO tetrapods film were measured by using two point probes and it shows that, the sample growth in Ar and O2 atmosphere have better I-V characteristic.

Effect of temperature on the electrical properties of a metal-ferroelectric (SrBi2Ta2O9)-insulator (HfTaO)-silicon capacitor

NASA Astrophysics Data System (ADS)

Chen, Y. Q.; Xu, X. B.; Lei, Z. F.; Y Liao, X.; Wang, X.; Zeng, C.; En, Y. F.; Huang, Y.

2015-01-01

A metal-ferroelectric (SrBi2Ta2O9)-insulator (HfTaO)-semiconductor capacitor was fabricated, and the temperature dependence of its electrical properties was investigated. Within the temperature range of 300-220 K, the maximum memory window is up to 1.26 V, and it could be attributed to a higher coercive field of the ferroelectric film at a lower temperature, which is induced by the deeper and more box-shaped potential well based on the defect-domain interaction model. The memory window decreases with increasing temperature from 300 to 400 K, and the larger sweep voltage leads to a smaller memory window at a higher temperature, which could be attributed to temperature-dependent polarization of the ferroelectric film and charge injection from an Si substrate of the capacitor. With the temperature increasing from 220 to 400 K, the leakage current density increases with temperature by about one order, and the corresponding conduction mechanism is discussed. The results could provide useful guidelines for design and application of ferroelectric memory.

Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al2O3/GaN MIS Diode

NASA Astrophysics Data System (ADS)

Reddy, M. Siva Pratap; Puneetha, Peddathimula; Reddy, V. Rajagopal; Lee, Jung-Hee; Jeong, Seong-Hoon; Park, Chinho

2016-11-01

The temperature-dependent electrical properties and carrier transport mechanisms of tetramethylammonium hydroxide (TMAH)-treated Ni/Au/Al2O3/GaN metal-insulator-semiconductor (MIS) diodes have been investigated by current-voltage ( I- V) and capacitance-voltage ( C- V) measurements. The experimental results reveal that the barrier height ( I- V) increases whereas the ideality factor decreases with increasing temperature. The TMAH-treated Ni/Au/Al2O3/GaN MIS diode showed nonideal behaviors which indicate the presence of a nonuniform distribution of interface states ( N SS) and effect of series resistance ( R S). The obtained R S and N SS were found to decrease with increasing temperature. Furthermore, it was found that different transport mechanisms dominated in the TMAH-treated Ni/Au/Al2O3/GaN MIS diode. At 150 K to 250 K, Poole-Frenkel emission (PFE) was found to be responsible for the reverse leakage, while Schottky emission (SE) was the dominant mechanism at high electric fields in the temperature range from 300 K to 400 K. Feasible energy band diagrams and possible carrier transport mechanisms for the TMAH-treated Ni/Au/Al2O3/GaN MIS diode are discussed based on PFE and SE.

Surface topography and electrical properties in Sr2FeMoO6 films studied at cryogenic temperatures

NASA Astrophysics Data System (ADS)

Angervo, I.; Saloaro, M.; Mäkelä, J.; Lehtiö, J.-P.; Huhtinen, H.; Paturi, P.

2018-03-01

Pulsed laser deposited Sr2FeMoO6 thin films were investigated for the first time with scanning tunneling microscopy and spectroscopy. The results confirm atomic scale layer growth, with step-terrace structure corresponding to a single lattice cell scale. The spectroscopy research reveals a distribution of local electrical properties linked to structural deformation in the initial thin film layers at the film substrate interface. Significant hole structure giving rise to electrically distinctive regions in thinner film also seems to set a thickness limit for the thinnest films to be used in applications.

The Synthesis and Thermoelectric Properties of p-Type Li1- x NbO2-Based Compounds

NASA Astrophysics Data System (ADS)

Rahman, Jamil Ur; Meang, Eun-Ji; Van Nguyen, Du; Seo, Won-Seon; Hussain, Ali; Kim, Myong Ho; Lee, Soonil

2017-03-01

We investigated the thermoelectric (TE) properties of a p-type oxide material (Li1- x NbO2, with x = 0-0.6). The composition was synthesized via a solid-state reaction method under a reducing atmosphere. The charge transport properties were determined through the electrical conductivity and Seebeck coefficient measurements. The electrical conductivity was non-monotonically varied with x value and showed metallic behavior with increased temperature and above 650 K temperature independent behavior dominated by extrinsic conduction. On the other hand, the Seebeck coefficient was increased with an increase in the temperature, and decreased gradually with an increase in the Li vacancy concentration by both synthesis and gradual phase transition to a Li-rich Li3NbO4 phase with temperature and appeared as an n-type TE at x = 0.6 under high temperatures, which was attributed to an Nb substitution into the Li site. The thermal conductivity was monotonically reduced with the increase in temperature due to the cation disorder defects and second phases. The Li vacancy induced Li1- x NbO2-based compounds under low oxygen partial pressure show promise as a candidate p-type material for thermoelectric applications, particularly for co-processing with n-type oxide thermoelectric materials fabricated under conditions of low oxygen partial pressure.

The effect of substrate temperature on the microstructural, electrical and optical properties of Sn-doped indium oxide thin films

NASA Astrophysics Data System (ADS)

Raoufi, Davood; Taherniya, Atefeh

2015-06-01

In this work, Sn doping In2O3 (ITO) thin films with a thickness of 200 nm were deposited on glass substrates by electron beam evaporation (EBE) method at different substrate temperatures. The crystal structure of these films was studied by X-ray diffraction technique. The sheet resistance was measured by a four-point probe. Van der Pauw method was used to measure carrier density and mobility of ITO films. The optical transmittance spectra were recorded in the wavelength region of 300-800 nm. Scanning electron microscope (SEM) has been used for the surface morphology analysis. The prepared ITO films exhibited body-centered cubic (BCC) structure with preferred orientation of growth along the (2 2 2) crystalline plane. The grain size of the films increases by rising the substrate temperature. Transparency of the films, over the visible light region, is increased with increasing the substrate temperature. It is found that the electrical properties of ITO films are significantly affected by substrate temperature. The electrical resistivity decreases with increasing substrate temperature, whereas the carrier density and mobility are enhanced with an increase in substrate temperature. The evaluated values of energy band gap Eg for ITO films were increase from 3.84 eV to 3.91 eV with increasing the substrate temperatures from 200 °C to 500 °C. The SEM micrographs of the films revealed a homogeneous growth without perceptible cracks with particles which are well covered on the substrate.

Dielectric and relaxation properties of poly(o-anisidine)/graphene nanocomposite

NASA Astrophysics Data System (ADS)

Sangamithirai, D.; Narayanan, V.; Stephen, A.

2016-05-01

Poly(o-anisidine)/graphene (POA/GR) nanocomposite was synthesized via chemical oxidative polymerization of o-anisidine in the presence of graphene sheets in acidic medium. The electrical properties of the nanocomposite are studied using AC impedance spectroscopic technique. It has been found that the room temperature electrical conductivity value enhanced from 1.28 × 10-6 S cm-1 to 4.47 × 10-4 S cm-1 on addition of 10 wt % of graphene into the polymer. An analysis of real and imaginary parts of dielectric permittivity reveals that both ɛ` and ɛ״ increases with the decrease of frequency at all temperature levels. Frequency dependence of dielectric loss (tan δ) spectrum indicates that hopping frequency increases with temperature and the relaxation time decreases from 2.67 × 10-5 to 7.28 × 10-6 sec.

Electrical and thermal transport properties of layered Bi{sub 2}YO{sub 4}Cu{sub 2}Se{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Yu; Pei, Yanling; Chang, Cheng

Bi{sub 2}YO{sub 4}Cu{sub 2}Se{sub 2} possesses a low thermal conductivity and high electrical conductivity at room temperature, which was considered as a potential thermoelectric material. In this work, we have investigated the electrical and thermal transport properties of Bi{sub 2}YO{sub 4}Cu{sub 2}Se{sub 2} system in the temperature range from 300 K to 873 K. We found that the total thermal conductivity decreases from ~1.8 W m{sup −1} K{sup −1} to ~0.9 W m{sup −1} K{sup −1}, and the electrical conductivity decreases from ~850 S/cm to ~163 S/cm in the measured temperature range. To investigate how potential of Bi{sub 2}YO{sub 4}Cu{submore » 2}Se{sub 2} system, we prepared the heavily Iodine doped samples to counter-dope intrinsically high carrier concentration and improve the electrical transport properties. Interestingly, the Seebeck coefficient could be enhanced to ~+80 μV/K at 873 K, meanwhile, we found that a low thermal conductivity of ~0.7 W m{sup −1} K{sup −1} could be achieved. The intrinsically low thermal conductivity in this system is related to the low elastic properties, such as Young's modulus of 70–72 GPa, and Grüneisen parameters of 1.55–1.71. The low thermal conductivity makes Bi{sub 2}YO{sub 4}Cu{sub 2}Se{sub 2} system to be a potential thermoelectric material, the ZT value ~0.06 at 873 K was obtained, a higher performance is expected by optimizing electrical transport properties through selecting suitable dopants, modifying band structures or by further reducing thermal conductivity through nanostructuring etc. - Highlights: • The total thermal conductivity decreases from 1.8 to 0.9 Wm{sup –1}K{sup –1} at 300–873K. • The electrical conductivity decreased from 850 to 163 S/cm at 300–873K. • The Seebeck coefficients were enhanced through heavily Iodine doping. • The ZT ~0.06 at 873K suggests that Bi{sub 2}YO{sub 4}Cu{sub 2}Se{sub 2} systems are potential thermoelectrical materials.« less

Concentration Dependent Electrical Transport Properties of Ni-Cr Binary Alloys

NASA Astrophysics Data System (ADS)

Suthar, P. H.; Khambholja, S. G.; Thakore, B. Y.; Gajjar, P. N.; Jani, A. R.

2011-07-01

The concentration dependent electrical transport properties viz. electrical resistivity and thermal conductivity of liquid Ni-Cr alloys are computed at 1400 K temperature. The electrical resistivity has been studied according to Faber-Ziman model in wide range of Cr concentration. In the present work, the electron-ion interaction is incorporated through our well tested local model potential with screening function due to Sarkar et al.. [S] along with the Hartree [H] dielectric function. Good agreement is achieved between the presently calculated results of resistivity as well as thermal conductivity with the experimental data found in the literature, confirming the applicability of model potential and Faber-Ziman model for such a study.

Effect of bath temperature on structure, morphology and thermoelectric properties of CoSb{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yadav, Suchitra, E-mail: suchitrayadav87@gmail.com; Pandya, Dinesh K.; Chaudhary, Sujeet

2016-05-23

CoSb{sub 3} thin films are deposited on conducting glass substrates (FTO) by electrodeposition at different bath temperatures (60°C, 70°C and 80°C) and the resulting influence of the bath temperature on the structure, morphology and electrical properties of films is investigated. X-ray diffraction confirms the formation of CoSb{sub 3} phase in the films. Scanning electron microscopy reveals that different morphologies ranging from branched nano-flakes to nano-needles evolve as bath temperature increases. It is concluded that a growth temperature of 80°C is suitable for producing CoSb{sub 3} films with such properties that show potential feasibility for thermoelectric applications.

Thermoelectric and Transport Properties of Delafossite CuCrO2:Mg Thin Films Prepared by RF Magnetron Sputtering

PubMed Central

Sinnarasa, Inthuga; Thimont, Yohann; Presmanes, Lionel; Barnabé, Antoine; Tailhades, Philippe

2017-01-01

P-type Mg doped CuCrO2 thin films have been deposited on fused silica substrates by Radio-Frequency (RF) magnetron sputtering. The as-deposited CuCrO2:Mg thin films have been annealed at different temperatures (from 450 to 650 °C) under primary vacuum to obtain the delafossite phase. The annealed samples exhibit 3R delafossite structure. Electrical conductivity σ and Seebeck coefficient S of all annealed films have been measured from 40 to 220 °C. The optimized properties have been obtained for CuCrO2:Mg thin film annealed at 550 °C. At a measurement temperature of 40 °C, this sample exhibited the highest electrical conductivity of 0.60 S·cm−1 with a Seebeck coefficient of +329 µV·K−1. The calculated power factor (PF = σS²) was 6 µW·m−1·K−2 at 40 °C and due to the constant Seebeck coefficient and the increasing electrical conductivity with measurement temperature, it reached 38 µW·m−1·K−2 at 220 °C. Moreover, according to measurement of the Seebeck coefficient and electrical conductivity in temperature, we confirmed that CuCrO2:Mg exhibits hopping conduction and degenerates semiconductor behavior. Carrier concentration, Fermi level, and hole effective mass have been discussed. PMID:28654011

Electrical and mechanical properties of Sn-5wt.%Sb alloy with annealing temperature

NASA Astrophysics Data System (ADS)

Said Gouda, El; Ahmed, E. M.; Saad Allah, F. A.

2009-01-01

A binary Sn-5wt.%Sb solder alloy was chosen as a potential alternative to Sn-Pb solder alloy to be subjected to many studies. It was casted from the liquid state, cold drawn into wires of 1 mm diameters. The study includes the structure, electrical resistivity, tensile strength, hardness and indentation creep behavior using XRD, four probes electrical circuit, conventional tensile testing machine, Vickers microhardness tester, respectively. These properties were carried out for the cold worked alloy and after annealing at 393 and 473 K for 60 min. It was found that annealed samples exhibit more precipitations of the intermetallic compounds SnSb, higher lattice parameters and higher crystallite size, while have lower lattice-strain induced due to the cold working process. These structural changes greatly affect the electrical resistivity and mechanical properties of this alloy.

The effect of CO2 gas adsorption on the electrical properties of Fe doped TiO2 films

NASA Astrophysics Data System (ADS)

Mardare, Diana; Adomnitei, Catalin; Florea, Daniel; Luca, Dumitru; Yildiz, Abdullah

2017-11-01

CO2 has to be monitored for indoor air quality, being also an important greenhouse gas. The electrical and sensing gas properties of the undoped and Fe doped TiO2 thin films, obtained by RF sputtering, have been investigated in different CO2 atmospheres. It was observed that the response to CO2 increases by Fe doping for the lowest doped film, and then decreases, as the dopant concentration increases. An explanation was given based on multiphonon-assisted hopping model. By studying the films electrical conductivity in front of a certain CO2 atmosphere, we have qualitatively evidenced the semiconducting n-type nature of the films under study, except for the highest Fe doped film which has a p-type behavior. An important finding is that Fe doping determines the decrease of the optimum operating temperature, approaching the room temperature.

Structural and transport properties of NdCrO{sub 3} nanoceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, Sujoy; Sakhya, Anup Pradhan; Sinha, T. P.

2013-02-05

Reitveld refinement of the room temperature powder X-ray diffraction profile of NdCrO{sub 3} (NCO) nanoceramics synthesized by sol-gel processing shows orthorhombic Pnma (D{sub 2h}{sup 16}) space group symmetry. The refined lattice parameters are a = 5.482(3) A, b = 7.689(4) A and c = 5.416(3) A. Transmission electron microscopy (TEM) of NCO shows that the average particle size is around 70 nm. The electrical transport property of NCO is investigated by both conductivity and electric modulus formalism. The electrical data is taken by a LCR meter in a temperature range from 303 K to 573 K and in a frequencymore » range from 42 Hz to 1.1 MHz. The ac conductivity follows a power law. The Cole-Cole plot of impedance at 303 K shows grain effect.« less

Dielectric and electrical characteristics of Sr modified Ca1Cu3Ti4O12

NASA Astrophysics Data System (ADS)

Sahu, M.; Choudhary, R. N. P.; Roul, B. K.

2018-05-01

This paper mainly reports on the effect of Sr substitution on dielectric and electrical properties of CaCu3Ti4O12 at different temperature and frequency. Preliminary analysis of X-ray diffraction data of sintered samples confirms the reported cubic structure. Study of surface morphology shows that the surface of the samples contains well-defined and uniformly distributed grains. Some electrical parameters (permittivity, tangent loss and impedance) of the materials were measured and analyzed over a wide range of temperature (25 to 315 °C) and frequency (50 to 2x106 Hz). The ultra high dielectric constant and low energy dissipation have been observed in the said experimental conditions of phase-pure prepared compounds. It is expected that the addition of nano-size compounds or oxide will help to enhance the above properties useful for fabrication of super-capacitor.

Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

NASA Astrophysics Data System (ADS)

Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

2017-11-01

Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

NASA Astrophysics Data System (ADS)

Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

2018-06-01

Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

Role of temperature and oxygen content on structural and electrical properties of LaBaCo2O5+δ thin films

NASA Astrophysics Data System (ADS)

Mace, Brennan; Harrell, Zach; Chen, Chonglin; Enriquez, Erik; Chen, Aiping; Jia, Quanxi

2018-02-01

The role of temperature and the oxygen content in the structural transformation and electrical conductivity of epitaxial double perovskite LaBaCo2O5+δ (0≤ δ ≤ 1) thin films was systematically investigated. Reciprocal space mapping and ω-2θ x-ray diffraction performed at different temperatures in vacuum indicate that oxygen vacancies in the films become ordered at high temperature in a reducing environment. The changes of the oxygen content and the degree of oxygen vacancy ordering in the films result in a strong in-plane anisotropic lattice deformation and a large thermal expansion coefficient along the c-axis direction. The electrical conductivity measurements reveal that these behaviors are related to the degree of oxygen vacancy formation and lattice deformation in the films.

Role of temperature and oxygen content on structural and electrical properties of LaBaCo2O5+δ thin films.

PubMed

Mace, Brennan; Harrell, Zach; Chen, Chonglin; Enriquez, Erik; Chen, Aiping; Jia, Quanxi

2018-02-12

The role of temperature and the oxygen content in the structural transformation and electrical conductivity of epitaxial double perovskite LaBaCo 2 O 5+δ (0≤ δ ≤ 1) thin films was systematically investigated. Reciprocal space mapping and ω-2θ x-ray diffraction performed at different temperatures in vacuum indicate that oxygen vacancies in the films become ordered at high temperature in a reducing environment. The changes of the oxygen content and the degree of oxygen vacancy ordering in the films result in a strong in-plane anisotropic lattice deformation and a large thermal expansion coefficient along the c-axis direction. The electrical conductivity measurements reveal that these behaviors are related to the degree of oxygen vacancy formation and lattice deformation in the films.

Versatile apparatus for thermoelectric characterization of oxides at high temperatures

NASA Astrophysics Data System (ADS)

Schrade, Matthias; Fjeld, Harald; Norby, Truls; Finstad, Terje G.

2014-10-01

An apparatus for measuring the Seebeck coefficient and electrical conductivity is presented and characterized. The device can be used in a wide temperature range from room temperature to 1050 °C and in all common atmospheres, including oxidizing, reducing, humid, and inert. The apparatus is suitable for samples with different geometries (disk-, bar-shaped), allowing a complete thermoelectric characterization (including thermal conductivity) on a single sample. The Seebeck coefficient α can be measured in both sample directions (in-plane and cross-plane) simultaneously. Electrical conductivity is measured via the van der Pauw method. Perovskite-type CaMnO3 and the misfit cobalt oxide (Ca2CoO3)q(CoO2) are studied to demonstrate the temperature range and to investigate the variation of the electrical properties as a function of the measurement atmosphere.

Versatile apparatus for thermoelectric characterization of oxides at high temperatures.

PubMed

Schrade, Matthias; Fjeld, Harald; Norby, Truls; Finstad, Terje G

2014-10-01

An apparatus for measuring the Seebeck coefficient and electrical conductivity is presented and characterized. The device can be used in a wide temperature range from room temperature to 1050 °C and in all common atmospheres, including oxidizing, reducing, humid, and inert. The apparatus is suitable for samples with different geometries (disk-, bar-shaped), allowing a complete thermoelectric characterization (including thermal conductivity) on a single sample. The Seebeck coefficient α can be measured in both sample directions (in-plane and cross-plane) simultaneously. Electrical conductivity is measured via the van der Pauw method. Perovskite-type CaMnO3 and the misfit cobalt oxide (Ca2CoO3)q(CoO2) are studied to demonstrate the temperature range and to investigate the variation of the electrical properties as a function of the measurement atmosphere.

Electrical conductivity of a methane-air burning plasma under the action of weak electric fields

NASA Astrophysics Data System (ADS)

Colonna, G.; Pietanza, L. D.; D'Angola, A.; Laricchiuta, A.; Di Vita, A.

2017-02-01

This paper focuses on the calculation of the electrical conductivity of a methane-air flame in the presence of weak electric fields, solving the Boltzmann equation for free electrons self-consistently coupled with chemical kinetics. The chemical model GRI-Mech 3.0 has been completed with chemi-ionization reactions to model ionization in the absence of fields, and a database of cross sections for electron-impact-induced processes to account for reactions and transitions activated in the flame during discharge. The dependence of plasma properties on the frequency of an oscillating field has been studied under different pressure and gas temperature conditions. Fitting expressions of the electrical conductivity as a function of gas temperature and methane consumption are provided for different operational conditions in the Ansaldo Energia burner.

Properties of PZT-Based Piezoelectric Ceramics Between -150 and 250 C

NASA Technical Reports Server (NTRS)

Hooker, Matthew W.

1998-01-01

The properties of three PZT-based piezoelectric ceramics and one PLZT electrostrictive ceramic were measured as a function of temperature. In this work, the dielectric, ferroelectric polarization versus electric field, and piezoelectric properties of PZT-4, PZT-5A, PZT-5H, and PLZT-9/65/35 were measured over a temperature range of -150 to 250 C. In addition to these measurements, the relative thermal expansion of each composition was measured from 25 to 600 C and the modulus of rupture of each material was measured at room temperature. This report describes the experimental results and compares and contrasts the properties of these materials with respect to their applicability to intelligent aerospace systems.

Structural, transport and thermoelectric properties of Nb-doped CaLaMnO perovskite

NASA Astrophysics Data System (ADS)

Villa, J. I.; Rodríguez, J. E.

2014-12-01

Poly-crystalline perovskite-type (CaLaMnO) Ca0.95La0.05Mn1-xNbxO3 (0.0 ≤ x ≤ 0.10) was synthesized using the conventional solid-state reaction method. Structural and morphological properties were studied by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM), respectively. Their transport and thermoelectric properties were studied from electrical resistivity ρ(T) and Seebeck coefficient S(T) measurements as a function of temperature and niobium content. The Rietveld analysis revealed a compound with orthorhombic structure, where their lattice parameters increase with the niobium content which is given by a distortion in octahedra MnO6. Electrical resistivity exhibits a semiconducting-like behavior, for low niobium contents (Nb ≤ 0.03) the magnitude of the electrical resistivity decreases, reaching minimum values close to 0.1 Ω - cm. Seebeck coefficient is negative in all studied temperature range. The temperature behavior of S(T) is interpreted in terms of variable range hopping (VRH) and Heikes model. From ρ(T) and S(T) measurements it was possible to calculate the thermoelectric power factor (PF), which reaches maximum values around 0.4 μW /K2 -cm. These values make these ceramics promising electronic thermoelectric materials.

Electrical modulus and dielectric behavior of Cr3+ substituted Mg-Zn nanoferrites

NASA Astrophysics Data System (ADS)

Mansour, S. F.; Abdo, M. A.

2017-04-01

The dielectric parameters and ac electrical conductivity of Mg0.8Zn0.2CrxFe2-xO4; (0≤x≤0.025) nanoferrites synthesized citrate-nitrate auto-combustion method were studied using the complex impedance technique in the frequency and temperature ranges 4 Hz-5 MHz and 303-873 K respectively. Hopping of charge carriers plus interfacial polarization could interpret the behaviors of dielectric constant (ε‧), dielectric loss tangent (tanδ) and ac electrical conductivity (σac) with frequency, temperatures and composition. The up-normal behavior observed in tanδ trend with temperatures confirms the presence of relaxation loss (dipoles losses). Correlated barrier hopping (CBH) of electron is the conduction mechanism of the investigated nanoferrites. Cole-Cole plots at different temperatures emphasize the main role of grain and grain boundaries in the properties of the investigated nanoferrites. Cr3+ substitution can control the dielectric parameters and ac electrical conductivity of Mg-Zn nanoferrites making it candidates for versatile applications.

Synthesis and characterization of electrical conducting porous carbon structures based on resorcinol-formaldehyde

NASA Astrophysics Data System (ADS)

Najeh, I.; Ben Mansour, N.; Mbarki, M.; Houas, A.; Nogier, J. Ph.; El Mir, L.

2009-10-01

Electrical conducting carbon (ECC) porous structures were explored by changing the pyrolysis temperature of organic xerogel compounds prepared by sol-gel method from resorcinol-formaldehyde (RF) mixtures in acetone using picric acid as catalyst. The effect of this preparation parameter on the structural and electrical properties of the obtained ECCs was studied. The analysis of the obtained results revealed that the polymeric insulating xerogel phase was transformed progressively with pyrolysis temperature into carbon conducting phase; this means the formation of long continuous conducting path for charge carriers to move inside the structure with thermal treatment and the samples exhibited tangible percolation behaviour where the percolation threshold can be determined by pyrolysis temperature. The temperature-dependent conductivity of the obtained ECC structures shows a semi-conducting behaviour and the I( V) characteristics present a negative differential resistance. The results obtained from STM micrographs revealed that the obtained ECC structures consist of porous electrical conducting carbon materials.

Detection of temperature distribution via recovering electrical conductivity in MREIT.

PubMed

Oh, Tong In; Kim, Hyung Joong; Jeong, Woo Chul; Chauhan, Munish; Kwon, Oh In; Woo, Eung Je

2013-04-21

In radiofrequency (RF) ablation or hyperthermia, internal temperature measurements and tissue property imaging are important to control their outputs and assess the treatment effect. Recently, magnetic resonance electrical impedance tomography (MREIT), as a non-invasive imaging method of internal conductivity distribution using an MR scanner, has been developed. Its reconstruction algorithm uses measured magnetic flux density induced by injected currents. The MREIT technique has the potential to visualize electrical conductivity of tissue with high spatial resolution and measure relative conductivity variation according to the internal temperature change based on the fact that the electrical conductivity of biological tissues is sensitive to the internal temperature distribution. In this paper, we propose a method to provide a non-invasive alternative to monitor the internal temperature distribution by recovering the electrical conductivity distribution using the MREIT technique. To validate the proposed method, we design a phantom with saline solution and a thin transparency film in a form of a hollow cylinder with holes to create anomalies with different electrical and thermal conductivities controlled by morphological structure. We first prove the temperature maps with respect to spatial and time resolution by solving the thermal conductivity partial differential equation with the real phantom experimental environment. The measured magnetic flux density and the reconstructed conductivity distributions using the phantom experiments were compared to the simulated temperature distribution. The relative temperature variation of two testing objects with respect to the background saline was determined by the relative conductivity contrast ratio (rCCR,%). The relation between the temperature and conductivity measurements using MREIT was approximately linear with better accuracy than 0.22 °C.

Structure-property relations of calcium-sulfur-hydrogen: An investigation of the electromechanical properties

NASA Astrophysics Data System (ADS)

Yuan, Lijian

This thesis investigates the structure-property relations for the calcium silicate hydrate (C-S-H) gel phase in hardened cement pastes (HCP). Studies were performed with the purpose of gaining insight into the origin of the electromechanical behavior and exploring the dynamic nature of the pore structures of HCP during water transport by using an electrically induced strain method. Emphasis was placed on the fundamental characteristics of the electrically induced strains, the role that electrically stimulated water transport through the interconnecting pore structures in HCP plays, as well as the mechanism underlying the induced strains. Reversible and irreversible components of the induced strains were distinguished under ac electric field. Evidence showed that the reversible strains were due to redistribution of water along the structure of the pore network of specimens, whereas the irreversible strains were related to long-range water transport toward the surface of specimens. In contrast, the contractive strains were found following the water loss during measurements. Investigations as a function of measurement frequency revealed a strong relaxation of the induced strains in the frequency range from 6.7 × 10sp{-3} to 1 Hz. The strong relaxation in the induced strains with electric field was found to be due to space charge polarization and a creep-like deformation. The induced strains were shown to be strongly affected by changes in the gel pore structures. The magnitude of the induced strains was found to be significantly dependent on the moisture content adsorbed. Evidence of a critical percolation of pore solution was also observed. A strong decrease in the induced strains was observed with decreasing temperature due to the influence of ice formation. This decrease was interpreted in terms of a decrease in the electroosmotic volumetric flux and hydraulic permeability with decreasing temperature. The strong non-linearity in the induced strains was found with respect to the electric field strength. The presence of non-linear electric streaming current vs. electric field characteristics was examined, which was modeled by using an electrokinetic equation of state. Evidence of an anomalous temperature dependence in both electrical conductivity and dielectric permitivity was observed, indicating the presence of anomalies associated with a percolation-like transition.

Electrical and absorption properties of fresh cassava tubers and cassava starch

NASA Astrophysics Data System (ADS)

Harnsoongnoen, S.; Siritaratiwat, A.

2015-09-01

The objective of this study was to analyze the electrical and absorption properties of fresh cassava tubers and cassava starch at various frequencies using electric impedance spectroscopy and near-infrared spectroscopy, as well as determine the classification of the electrical parameters of both materials using the principle component analysis (PCA) method. All samples were measured at room temperature. The electrical and absorption parameters consisted of dielectric constant, dissipation factor, parallel capacitance, resistance, reactance, impedance and absorbance. It was found that the electrical and absorption properties of fresh cassava tubers and cassava starch were a function of frequency, and there were significant differences between the materials. The dielectric constant, parallel capacitance, resistance and impedance of fresh cassava tubers and cassava starch had similar dramatic decreases with increasing frequency. However, the reactance of both materials increased with an increasing frequency. The electrical parameters of both materials could be classified into two groups. Moreover, the dissipation factor and phase of impedance were the parameters that could be used in the separation of both materials. According to the absorbance patterns of the fresh cassava tubers and cassava starch, there were significant differences.

Room-temperature wide-range luminescence and structural, optical, and electrical properties of SILAR deposited Cu-Zn-S nano-structured thin films

NASA Astrophysics Data System (ADS)

Jose, Edwin; Kumar, M. C. Santhosh

2016-09-01

We report the deposition of nanostructured Cu-Zn-S composite thin films by Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates at room temperature. The structural, morphological, optical, photoluminescence and electrical properties of Cu-Zn-S thin films are investigated. The results of X-ray diffraction (XRD) and Raman spectroscopy studies indicate that the films exhibit a ternary Cu-Zn-S structure rather than the Cu xS and ZnS binary composite. Scanning electron microscope (SEM) studies show that the Cu-Zn-S films are covered well over glass substrates. The optical band gap energies of the Cu-Zn-S films are calculated using UV-visible absorption measurements, which are found in the range of 2.2 to 2.32 eV. The room temperature photoluminescence studies show a wide range of emissions from 410 nm to 565 nm. These emissions are mainly due to defects and vacancies in the composite system. The electrical studies using Hall effect measurements show that the Cu-Zn-S films are having p-type conductivity.

Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

NASA Astrophysics Data System (ADS)

Das, Amit Kumar; Meikap, Ajit Kumar

2017-12-01

In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

PubMed

Wu, Jingjin; Zhao, Yinchao; Zhao, Ce Zhou; Yang, Li; Lu, Qifeng; Zhang, Qian; Smith, Jeremy; Zhao, Yongming

2016-08-13

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV-vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350-550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

NASA Astrophysics Data System (ADS)

Das, Amit Kumar; Meikap, Ajit Kumar

2018-06-01

In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

PubMed Central

Wu, Jingjin; Zhao, Yinchao; Zhao, Ce Zhou; Yang, Li; Lu, Qifeng; Zhang, Qian; Smith, Jeremy; Zhao, Yongming

2016-01-01

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition. PMID:28773816

Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

NASA Astrophysics Data System (ADS)

Zhang, Shumao; Kuo, Yue

2018-03-01

Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

Alternating current breakdown voltage of ice electret

NASA Astrophysics Data System (ADS)

Oshika, Y.; Tsuchiya, Y.; Okumura, T.; Muramoto, Y.

2017-09-01

Ice has low environmental impact. Our research objectives are to study the availability of ice as a dielectric insulating material at cryogenic temperatures. We focus on ferroelectric ice (iceXI) at cryogenic temperatures. The properties of iceXI, including its formation, are not clear. We attempted to obtain the polarized ice that was similar to iceXI under the applied voltage and cooling to 77 K. The polarized ice have a wide range of engineering applications as electronic materials at cryogenic temperatures. This polarized ice is called ice electret. The structural difference between ice electret and normal ice is only the positions of protons. The effects of the proton arrangement on the breakdown voltage of ice electret were shown because electrical properties are influenced by the structure of ice. We observed an alternating current (ac) breakdown voltage of ice electret and normal ice at 77 K. The mean and minimum ac breakdown voltage values of ice electret were higher than those of normal ice. We considered that the electrically weak part of the normal ice was improved by applied a direct electric field.

Reversible tuning of magnetocaloric Ni-Mn-Ga-Co films on ferroelectric PMN-PT substrates.

PubMed

Schleicher, Benjamin; Niemann, Robert; Schwabe, Stefan; Hühne, Ruben; Schultz, Ludwig; Nielsch, Kornelius; Fähler, Sebastian

2017-10-31

Tuning functional properties of thin caloric films by mechanical stress is currently of high interest. In particular, a controllable magnetisation or transition temperature is desired for improved usability in magnetocaloric devices. Here, we present results of epitaxial magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg 1/3 Nb 2/3 ) 0.72 Ti 0.28 O 3 (PMN-PT) substrates. Utilizing X-ray diffraction measurements, we demonstrate that the strain induced in the substrate by application of an electric field can be transferred to the thin film, resulting in a change of the lattice parameters. We examined the consequences of this strain on the magnetic properties of the thin film by temperature- and electric field-dependent measurements. We did not observe a change of martensitic transformation temperature but a reversible change of magnetisation within the austenitic state, which we attribute to the intrinsic magnetic instability of this metamagnetic Heusler alloy. We demonstrate an electric field-controlled entropy change of about 31 % of the magnetocaloric effect - without any hysteresis.

Electrical and optical properties of molybdenum doped zinc oxide films prepared by reactive RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, R. Subba; Sreedhar, A.; Uthanna, S., E-mail: uthanna@rediffmail.com

Molybdenum doped zinc oxide (MZO) films were deposited on to glass substrates held at temperatures in the range from 303 to 673 K by reactive RF magnetron sputtering method. The chemical composition, crystallographic structure and surface morphology, electrical and optical properties of the films were determined. The films contained the molybdenum of 2.7 at. % in ZnO. The films deposited at 303 K were of X-ray amorphous. The films formed at 473 K were of nanocrystalline in nature with wurtzite structure. The crystallite size of the films was increased with the increase of substrate temperature. The optical transmittance of the films was inmore » the visible range was 80–85%. The molybdenum (2.7 at %) doped zinc oxide films deposited at substrate temperature of 573 K were of nanocrystalline with electrical resistivity of 7.2×10{sup −3} Ωcm, optical transmittance of 85 %, optical band gap of 3.35 eV and figure of merit 30.6 Ω{sup −1}cm{sup −1}.« less

Heat-Electric Power Conversion Without Temperature Difference Using Only n-Type Ba8Au x Si46-x Clathrate with Au Compositional Gradient

NASA Astrophysics Data System (ADS)

Osakabe, Yuki; Tatsumi, Shota; Kotsubo, Yuichi; Iwanaga, Junpei; Yamasoto, Keita; Munetoh, Shinji; Furukimi, Osamu; Nakashima, Kunihiko

2018-02-01

Thermoelectric power generation is typically based on the Seebeck effect under a temperature gradient. However, the heat flux generated by the temperature difference results in low conversion efficiency. Recently, we developed a heat-electric power conversion mechanism using a material consisting of a wide-bandgap n-type semiconductor, a narrow-bandgap intrinsic semiconductor, and a wide-bandgap p-type semiconductor. In this paper, we propose a heat-electric power conversion mechanism in the absence of a temperature difference using only n-type Ba8Au x Si46-x clathrate. Single-crystal Ba8Au x Si46-x clathrate with a Au compositional gradient was synthesized by Czochralski method. Based on the results of wavelength-dispersive x-ray spectroscopy and Seebeck coefficient measurements, the presence of a Au compositional gradient in the sample was confirmed. It also observed that the electrical properties changed gradually from wide-bandgap n-type to narrow-bandgap n-type. When the sample was heated in the absence of a temperature difference, the voltage generated was approximately 0.28 mV at 500°C. These results suggest that only an n-type semiconductor with a controlled bandgap can generate electric power in the absence of a temperature difference.

Comparison of mechanical properties for several electrical spring contact alloys. [Beryllium-nickel alloy 440 (Ni--1. 95 Be--0. 5 Ti); comparison with Neyoro G and Paliney 7

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nordstrom, T.V.

Purpose was to determine whether beryllium--nickel alloy 440 (Ni-1.95 Be-0.5 Ti) had mechanical properties which made it suitable as a substitute for the presently used precious metal contact alloys Paliney 7 and Neyoro G, in certain electrical contact applications. Possible areas of applicability for the alloy were where extremely low contact resistance was not necessary or in components encountering elevated temperatures above those presently seen in weapons applications. Evaluation of the alloy involved three major experimental areas: (1) measurement of the room temperature microplastic (epsilon approximately 10/sup -6/) and macroplastic (epsilon approximately 10/sup -3/) behavior of alloy 440 in variousmore » age hardening conditions, (2) determination of applied stress effects on stress relaxation or contact force loss, and (3) measurement of elevated temperature mechanical properties and stress relaxation behavior. Similar measurements were also made on Neyoro G and Paliney 7 for comparison. Results show that beryllium-nickel alloy 440 is equal or superior to the presently used Paliney 7 and Neyoro G for normal Sandia requirements. For elevated temperature applications, alloy 440 has clearly superior mechanical properties. 12 fig.« less

Measurement of the properties of lossy materials inside a finite conducting cylinder

NASA Technical Reports Server (NTRS)

Dominek, A.; Park, A.; Caldecott, R.

1988-01-01

Broadband, swept frequency measurement techniques were investigated for the evaluation of the electrical performance of thin, high temperature material coatings. Reflections and transmission measurements using an HP8510B Network Analyzer were developed for an existing high temperature test rig at NASA Lewis Research Center. Reflection measurements will be the initial approach used due to fixture simplicity even though surface wave transmission measurements would be more sensitive. The minimum goal is to monitor the electrical change of the material's performance as a function of temperature. If possible, the materials constitutive parameters, epsilon and muon will be found.

Polyimides Containing Amide And Perfluoroisopropyl Links

NASA Technical Reports Server (NTRS)

Dezem, James F.

1993-01-01

New polyimides synthesized from reactions of aromatic hexafluoroisopropyl dianhydrides with asymmetric amide diamines. Soluble to extent of at least 10 percent by weight at temperature of about 25 degrees C in common amide solvents such as N-methylpyrrolidone, N,N-dimethylacetamide, and N,N-dimethylformamide. Polyimides form tough, flexible films, coatings, and moldings. Glass-transition temperatures ranged from 300 to 365 degrees C, and crystalline melting temperatures observed between 543 and 603 degrees C. Display excellent physical, chemical, and electrical properties. Useful as adhesives, laminating resins, fibers, coatings for electrical and decorative purposes, films, wire enamels, and molding compounds.

Detecting giant electrocaloric properties of ferroelectric SbSI at room temperature

NASA Astrophysics Data System (ADS)

Hamad, Mahmoud A.

2013-05-01

In this work, ferroelectric SbSI shows a giant electrocaloric effect at room temperature under very low electric field shift of 0.37 kV cm-1. It is shown that the cooling ΔT per unit field MVm-1 is 2.97. This value is significantly larger, and is comparable with the value of 0.254 for PbZr0.95Ti0.05O3 thin film under electric field shift of 30 kV cm-1. Moreover, the reduction in operating temperature opens up many more possibilities and widens the potential for applications in cooling systems.

Thickness dependent optical and electrical properties of CdSe thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Purohit, A., E-mail: anuradha.purohit34@gmail.com; Chander, S.; Nehra, S. P.

2016-05-06

The effect of thickness on the optical and electrical properties of CdSe thin films is investigated in this paper. The films of thickness 445 nm, 631 nm and 810 nm were deposited on glass and ITO coated glass substrates using thermal evaporation technique. The deposited thin films were thermally annealed in air atmosphere at temperature 100°C and were subjected to UV-Vis spectrophotometer and source meter for optical and electrical analysis respectively. The absorption coefficient is observed to increase with photon energy and found maximum in higher photon energy region. The extinction coefficient and refractive index are also calculated. The electrical analysis shows thatmore » the electrical resistivity is observed to be decreased with thickness.« less

Selected physical properties of various diesel blends

NASA Astrophysics Data System (ADS)

Hlaváčová, Zuzana; Božiková, Monika; Hlaváč, Peter; Regrut, Tomáš; Ardonová, Veronika

2018-01-01

The quality determination of biofuels requires identifying the chemical and physical parameters. The key physical parameters are rheological, thermal and electrical properties. In our study, we investigated samples of diesel blends with rape-seed methyl esters content in the range from 3 to 100%. In these, we measured basic thermophysical properties, including thermal conductivity and thermal diffusivity, using two different transient methods - the hot-wire method and the dynamic plane source. Every thermophysical parameter was measured 100 times using both methods for all samples. Dynamic viscosity was measured during the heating process under the temperature range 20-80°C. A digital rotational viscometer (Brookfield DV 2T) was used for dynamic viscosity detection. Electrical conductivity was measured using digital conductivity meter (Model 1152) in a temperature range from -5 to 30°C. The highest values of thermal parameters were reached in the diesel sample with the highest biofuel content. The dynamic viscosity of samples increased with higher concentration of bio-component rapeseed methyl esters. The electrical conductivity of blends also increased with rapeseed methyl esters content.

Grain size effect on the electrical and magneto-transport properties of nanosized Pr0.67Sr0.33MnO3

NASA Astrophysics Data System (ADS)

Ng, S. W.; Lim, K. P.; Halim, S. A.; Jumiah, H.

2018-06-01

In this study, nanosized of Pr0.67Sr0.33MnO3 prepared via sol-gel method followed by heat treatment at 600-1000 °C in intervals of 100 °C were synthesized. The structure, surface morphology, electrical, magneto-transport and magnetic properties of the samples were investigated. Rietveld refinements of X-ray diffraction patterns confirm that single phase orthorhombic crystal structure with the space group of Pnma (62) is formed at 600 °C. A strong dependence of surface morphology, electrical and magneto-transport properties on grain size have been observed in this manganites system. Both grain size and crystallite size are increases with the sintering temperature due to the congregation effect. Upon increasing grain size, the paramagnetic-ferromagnetic transition temperature increases from 278 K to 295 K. The resistivity drops and the metal-insulator transition temperature shifted from 184 K to 248 K with increases of grain size due to the grain growth and reduction of grain boundary. Below metal-insulator transition temperature, the samples fit well to the combination of resistivity due to grain or domain boundaries, electron-electron scattering process and electron-phonon interaction. The resistivity data above the metal-insulator transition temperature is well described using small polaron hopping and variable range hopping models. It is found that the negative magnetoresistance also increases with larger grain size where the highest %MR of - 26% can be observed for sample sintered at 1000 °C (245 nm).

The Transport Properties of Activated Carbon Fibers

DOE R&D Accomplishments Database

di Vittorio, S. L.; Dresselhaus, M. S.; Endo, M.; Issi, J-P.; Piraux, L.

1990-07-01

The transport properties of activated isotropic pitch-based carbon fibers with surface area 1000 m{sup 2}/g have been investigated. We report preliminary results on the electrical conductivity, the magnetoresistance, the thermal conductivity and the thermopower of these fibers as a function of temperature. Comparisons are made to transport properties of other disordered carbons.

Critical scaling analysis for displacive-type organic ferroelectrics around ferroelectric transition

NASA Astrophysics Data System (ADS)

Ding, L. J.

2017-04-01

The critical scaling properties of displacive-type organic ferroelectrics, in which the ferroelectric-paraelectric transition is induced by spin-Peierls instability, are investigated by Green's function theory through the modified Arrott plot, critical isothermal and electrocaloric effect (ECE) analysis around the transition temperature TC. It is shown that the electric entropy change - ΔS follows a power-law dependence of electric field E : - ΔS ∼En with n satisfying the Franco equation n(TC) = 1 +(β - 1) /(β + γ) = 0.618, wherein the obtained critical exponents β = 0.440 and γ = 1.030 are not only corroborated by Kouvel-Fisher method, but also confirm the Widom critical relation δ = 1 + γ / β. The self-consistency and reliability of the obtained critical exponents are further verified by the scaling equations. Additionally, a universal curve of - ΔS is constructed with rescaling temperature and electric field, so that one can extrapolate the ECE in a certain temperature and electric field range, which would be helpful in designing controlled electric refrigeration devices.

Evolution of Structural and Electrical Properties of Carbon Films from Amorphous Carbon to Nanocrystalline Graphene on Quartz Glass by HFCVD.

PubMed

Zhai, Zihao; Shen, Honglie; Chen, Jieyi; Li, Xuemei; Jiang, Ye

2018-05-23

Direct growth of graphene films on glass is of great importance but has so far met with limited success. The noncatalytic property of glass results in the low decomposition ability of hydrocarbon precursors, especially at reduced temperatures (<1000 °C), and therefore amorphous carbon (a-C) films are more likely to be obtained. Here, we report the hydrogen influence on the structural and electrical properties of carbon films deposited on quartz glass at 850 °C by hot-filament chemical vapor deposition (HFCVD). The results revealed that the obtained a-C films were all graphitelike carbon films. Structural transition of the deposited films from a-C to nanocrystalline graphene was achieved by raising the hydrogen dilution ratios from 10 to over 80%. On the basis of systematic structural and chemical characterizations, a schematic process with three steps including sp 2 chain aggregation, aromatic ring formation, and sp 3 bond etching was proposed to interpret the structural evolution. The nanocrystalline graphene films grown on glass by HFCVD exhibited good electrical performance with a carrier mobility of 36.76 cm 2 /(V s) and a resistivity of 5.24 × 10 -3 Ω cm over an area of 1 cm 2 . Temperature-dependent electrical characterizations revealed that the electronic transport in carbon films was dominated by defect, localized, and extended states, respectively, when increasing the temperature from 75 to 292 K. The nanocrystalline graphene films presented higher carrier mobility and lower carrier concentration than those of a-C films, which was mainly attributed to their smaller conductive activation energy. The present investigation provides an effective way for direct growth of graphene films on glass at reduced temperatures and also offers useful insights into the understanding of structural and electrical relationship between a-C and graphene.

Structural, optical, magnetic and electrical properties of hematite (α-Fe2O3) nanoparticles synthesized by two methods: polyol and precipitation

NASA Astrophysics Data System (ADS)

Mansour, Houda; Letifi, Hanen; Bargougui, Radhouane; De Almeida-Didry, Sonia; Negulescu, Beatrice; Autret-Lambert, Cécile; Gadri, Abdellatif; Ammar, Salah

2017-12-01

Hematite (α-Fe2O3) nanoparticles have been successfully synthesized via two methods: (1) polyol and (2) precipitation in water. The influence of synthesis methods on the crystalline structure, morphological, optical, magnetic and electrical properties were investigated using X-ray diffraction, RAMAN spectroscopy, scanning electron microscopy, transmission electron microscopy, UV-visible diffuse reflectance spectroscopy (UV-vis DRS), superconducting quantum interference device and impedance spectroscopy. The structural properties showed that the obtained hematite α-Fe2O3 nanoparticles with two preparation methods exhibit hexagonal phase with high crystallinity and high-phase stability at room temperature. It was found that the average hematite nanoparticle size is estimated to be 36.86 nm for the sample synthesized by precipitation and 54.14 nm for the sample synthesized by polyol. Moreover, the optical properties showed that the band gap energy value of α-Fe2O3 synthesized by precipitation (2.07 eV) was higher than that of α-Fe2O3 synthesized by polyol (1.97 eV) and they showed a red shift to the visible region. Furthermore, the measurements of magnetic properties indicated a magnetization loop typical of ferromagnetic systems at room temperature. Measurements of electrical properties show higher dielectric permittivity (5.64 × 103) and relaxation phenomenon for α-Fe2O3 issued from the precipitation method than the other sample.

Fundamental studies of the metallurgical, electrical, and optical properties of gallium phosphide and gallium phosphide alloys

NASA Technical Reports Server (NTRS)

1972-01-01

Abstracts, bibliographic data, oral presentations, and published papers on (1) Diffusion of Sulfur in Gallium Phosphide and Gallium Arsenide, and (2) Properties of Gallium Phosphide Schottky Barrier Rectifiers for Use at High Temperature are presented.

Tuning Thermoelectric Properties of Type I Clathrate K 8–x Ba x Al 8+x Si 38–x through Barium Substitution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sui, Fan; Kauzlarich, Susan M.

2016-05-10

The thermal stability and thermoelectric properties of type I clathrate K8Al8Si38 up to 873 K are reported. K8Al8Si38 possesses a high absolute Seebeck coefficient value and high electrical resistivity in the temperature range of 323 to 873 K, which is consistent with previously reported low temperature thermoelectric properties. Samples with Ba partial substitution at the K guest atom sites were synthesized from metal hydride precursors. The samples with the nominal chemical formula of K8–xBaxAl8+xSi38–x (x = 1, 1.5, 2) possess type I clathrate structure (cubic, Pm3n), confirmed by X-ray diffraction. The guest atom site occupancies and thermal motions were investigatedmore » with Rietveld refinement of synchrotron powder X-ray diffraction. Transport properties of Ba-containing samples were characterized from 2 to 300 K. The K–Ba alloy phases showed low thermal conductivity and improved electrical conductivity compared to K8Al8Si38. Electrical resistivity and Seebeck coefficients were measured over the temperature range of 323 to 873 K. Thermal conductivity from 323 to 873 K was estimated from the Wiedemann–Franz relation and lattice thermal conductivity extrapolation from 300 to 873 K. K8–xBaxAl8+xSi38–x (x = 1, 1.5) synthesized with Al deficiency showed enhanced electrical conductivity, and the absolute Seebeck coefficients decrease with the increased carrier concentration. When x = 2, the Al content increases toward the electron balanced composition, and the electrical resistivity increases with the decreasing charge carrier concentration. Overall, K6.5Ba1.5Al9Si37 achieves an enhanced zT of 0.4 at 873 K.« less

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO 3₋δ thin films and a method of stabilization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Enriquez, Erik M.; Chen, Aiping; Harrell, Zachary John

Epitaxial SrFeO 3-δ (SFO) thin films have been grown on various substrates by pulsed laser deposition. The structural and electrical properties of SFO thin films are monitored with time in different atmospheres at room temperature, showing time-dependent crystal structure and electrical conductivity. The increased out-of-plane lattice parameter and resistivity over time are associated with the increased oxygen vacancies density in SFO thin films. The epitaxial strain plays an important role in determining the initial resistivity, and the sample environment determines the trend of resistivity change over time. An amorphous Al 2O 3 passivation layer has been found to be effectivemore » in stabilizing the structure and electrical properties of SFO thin films. Lastly, this work explores time dependent structure and properties variation in oxide films and provides a way to stabilize thin film materials that are sensitive to oxygen vacancies.« less

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO 3₋δ thin films and a method of stabilization

DOE PAGES

Enriquez, Erik M.; Chen, Aiping; Harrell, Zachary John; ...

2016-10-03

Epitaxial SrFeO 3-δ (SFO) thin films have been grown on various substrates by pulsed laser deposition. The structural and electrical properties of SFO thin films are monitored with time in different atmospheres at room temperature, showing time-dependent crystal structure and electrical conductivity. The increased out-of-plane lattice parameter and resistivity over time are associated with the increased oxygen vacancies density in SFO thin films. The epitaxial strain plays an important role in determining the initial resistivity, and the sample environment determines the trend of resistivity change over time. An amorphous Al 2O 3 passivation layer has been found to be effectivemore » in stabilizing the structure and electrical properties of SFO thin films. Lastly, this work explores time dependent structure and properties variation in oxide films and provides a way to stabilize thin film materials that are sensitive to oxygen vacancies.« less

Evidence for reentrant spin glass behavior in transition metal substituted Co-Ga alloys near critical concentration

NASA Astrophysics Data System (ADS)

Yasin, Sk. Mohammad; Srinivas, V.; Kasiviswanathan, S.; Vagadia, Megha; Nigam, A. K.

2018-04-01

In the present study magnetic and electrical transport properties of transition metal substituted Co-Ga alloys (near critical cobalt concentration) have been investigated. Analysis of temperature and field dependence of dc magnetization and ac susceptibility (ACS) data suggests an evidence of reentrant spin glass (RSG) phase in Co55.5TM3Ga41.5 (TM = Co, Cr, Fe, Cu). The magnetic transition temperatures (TC and Tf) are found to depend on the nature of TM element substitution with the exchange coupling strength Co-Fe > Co-Co > Co-Cu > Co-Cr. From magnetization dynamics precise transition temperatures for the glassy phases are estimated. It is found that characteristic relaxation times are higher than that of spin glasses with minimal spin-cluster formation. The RSG behavior has been further supported by the temperature dependence of magnetotransport studies. From the magnetic field and substitution effects it has been established that the magnetic and electrical transport properties are correlated in this system.

Low-temperature fabrication of dye-sensitized solar cells by transfer of composite porous layers

NASA Astrophysics Data System (ADS)

Dürr, Michael; Schmid, Andreas; Obermaier, Markus; Rosselli, Silvia; Yasuda, Akio; Nelles, Gabriele

2005-08-01

Dye-sensitized solar cells have established themselves as a potential low-cost alternative to conventional solar cells owing to their remarkably high power-conversion efficiency combined with `low-tech' fabrication processes. As a further advantage, the active layers consisting of nanoporous TiO2 are only some tens of micrometres thick and are therefore in principle suited for flexible applications. However, typical flexible plastic substrates cannot withstand the process temperatures of up to 500 ∘C commonly used for sintering the TiO2 nanoparticles together. Even though some promising routes for low-temperature sintering have been proposed, those layers cannot compete as regards electrical properties with layers obtained with the standard high-temperature process. Here we show that by a lift-off technique, presintered porous layers can be transferred to an arbitrary second substrate, and the original electrical properties of the transferred porous layers are maintained. The transfer process is greatly assisted by the application of composite layers comprising nanoparticles and nanorods.

Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mouro, J.; Gualdino, A.; Chu, V.

2013-11-14

Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three differentmore » types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.« less

Development and testing of a superconducting link for an IR detector

NASA Technical Reports Server (NTRS)

Caton, R.; Selim, R.

1991-01-01

The development and testing of a ceramic superconducting link for an infrared detector is summarized. Areas of study included the materials used, the electrical contacts, radiation and temperature cycling effects, aging, thermal conductivity, and computer models of an ideal link. Materials' samples were processed in a tube furnace at temperatures of 840 C to 865 C for periods up to 17 days and transition temperatures and critical current densities were recorded. The project achieved better quality high superconducting transition temperature material through improved processing and also achieved high quality electrical contacts. Studies on effects of electron irradiation, temperature cycling, and aging on superconducting properties indicate that the materials will be suitable for space applications. Various presentations and publications on the study's results are reported.

Depressed scattering across grain boundaries in single crystal graphene

NASA Astrophysics Data System (ADS)

Chen, Jiao; Jin, Zhi; Ma, Peng; Wang, Hong; Wang, Haomin; Shi, Jingyuan; Peng, Songang; Liu, Xinyu; Ye, Tianchun

2012-10-01

We investigated the electrical and quantum properties of single-crystal graphene (SCG) synthesized by chemical vapor deposition (CVD). Quantum Hall effect and Shubnikov de Hass oscillation, a distinguishing feature of a 2-dimensional electronic material system, were observed during the low temperature transport measurements. Decreased scattering from grain boundaries in SCG was proven through extracting information from weak localization theory. Our results facilitate understanding the electrical properties of SCG grown by CVD and its applications in high speed transistor and quantum devices.

Transport properties of Nd0.67Sr0.33Mn0.85Co0.15O3 manganite

NASA Astrophysics Data System (ADS)

Bhargav, Abhinav; Tank, Tejas M.; Sanyal, Sankar P.

2018-05-01

We have studied the structural and electrical transport properties of Nd0.67Sr0.33Mn0.85Co0.15O3 manganite prepared through conventional solid state reaction technique. The investigation of X-ray diffraction data and rietvield refinement show that the synthesized sample is single phase in nature and crystallizes in orthorhombic perovskite structure with Pbnm space group. The resistivity versus temperature measurement for sample Nd0.67Sr0.33Mn0.85Co0.15O3 was performed in the range 0-300K and at 0T field. The electrical transport mechanism of the sample is analyzed by different theoretical models, for temperatures below and above TP.

Study of electrical and magnetic properties of RE doped layered cobaltite thin films

NASA Astrophysics Data System (ADS)

Bapna, K.; Choudhary, R. J.; Phase, D. M.; Rawat, R.; Ahuja, B. L.

2018-05-01

Thin films of layered perovskites Sr1.5RE0.5CoO4 (RE = La, Gd) were grown on MgO (0 0 1) substrate using pulsed laser ablation method. Structural, electrical and magnetic properties of single phase oriented films were studied. Films reveal semiconducting behavior in the entire measured temperature range. The films show thermally activated behavior at high temperature regime, with a higher value of activation energy for SGCO than that for SLCO. The low temperature behavior is well fitted with 3D-variable range hopping mechanism. Both films showed negative magneto-resistance measured in temperature range of 10-200 K. The value of MR is large for SGCO film as compared to its bulk counterpart as well as SLCO film, suggesting its high potential in the spintronics applications. A pinch-shaped M-H behaviour as observed in both the films, suggests the presence of two-magnetic phases. Occurrence of pinch-shape behaviour is although in line with that of SLCO bulk counterpart, interestingly, it was absent in SGCO polycrystalline powder. It suggests major role of film growth kinetics in modifying the magnetic properties in cobaltites.

Pressure dependence of the electrical properties of GaBi solidified in low gravity

NASA Technical Reports Server (NTRS)

Wu, M. K.; Ashburn, J. R.; Torng, C. J.; Curreri, P. A.; Chu, C. W.

1987-01-01

Immiscible GaBi alloys were solidified during free fall in the NASA Marshall Space Flight Center drop tower, which provides about 4.5 seconds of low gravity. The electrical resistivity and magnetic susceptibility were measured as a function of pressure (up to 18 kbar) and temperature (300 K to 4.2 K) of drop tower (DT) and ground control (GC) samples prepared under identical conditions, except for gravity. At ambient pressure the electrical resistance of the DT sample exhibits a broad maximum at 100 K, while that of GC sample decreases rapidly as temperature decreases. Both DT and GC samples become superconducting at 7.7 K. However, a minor second superconducting phase with a transition temperature at 8.3 K is observed only in the DT samples.

Fabrication and characterization of Ga-doped ZnO / Si heterojunction nanodiodes

NASA Astrophysics Data System (ADS)

Akgul, Guvenc; Akgul, Funda Aksoy

2017-02-01

In this study, temperature-dependent electrical properties of n-type Ga-doped ZnO thin film / p-type Si nanowire heterojunction diodes were reported. Metal-assisted chemical etching (MACE) process was performed to fabricate Si nanowires. Ga-doped ZnO films were then deposited onto nanowires through chemical bath deposition (CBD) technique to build three-dimensional nanowire-based heterojunction diodes. Fabricated devices revealed significant diode characteristics in the temperature range of 220 - 360 K. Electrical measurements shown that diodes had a well-defined rectifying behavior with a good rectification ratio of 103 ±3 V at room temperature. Ideality factor (n) were changed from 2.2 to 1.2 with increasing temperature.

Impedance spectroscopy study of 2, 2, 7, 7' -tetra kis-(N,N-di-4-methoxy phenyl amino)-9,9'-spirobifluorene thin films

NASA Astrophysics Data System (ADS)

Rana, Omwati; Agrawal, Kalpana; Rajput, S. S.; Zulfequar, M.; Husain, M.; Kamalasanan, M. N.; Srivastava, Ritu

2016-05-01

The electrical properties of thermally evaporated film of 2,2,7,7'-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9'-spirobifluorene (Spiro MeO TAD) have been investigated for hole only devices as a function of temperatures at frequency range from 1Hz to 1 MHz using Impedance spectroscopy. Cole-Cole plots, at each temperature, show semicircles that can be modeled with a contact resistance and parallel resistance -capacitor(R-C) circuits. Bulk resistance decreases and electrical conductivity increases with increasing temperature which indicate negative temperature coefficient of resistance nature and short range translational type hopping mechanism in Spiro MeO TAD thin films.

Safe and Durable High-Temperature Lithium-Sulfur Batteries via Molecular Layer Deposited Coating.

PubMed

Li, Xia; Lushington, Andrew; Sun, Qian; Xiao, Wei; Liu, Jian; Wang, Biqiong; Ye, Yifan; Nie, Kaiqi; Hu, Yongfeng; Xiao, Qunfeng; Li, Ruying; Guo, Jinghua; Sham, Tsun-Kong; Sun, Xueliang

2016-06-08

Lithium-sulfur (Li-S) battery is a promising high energy storage candidate in electric vehicles. However, the commonly employed ether based electrolyte does not enable to realize safe high-temperature Li-S batteries due to the low boiling and flash temperatures. Traditional carbonate based electrolyte obtains safe physical properties at high temperature but does not complete reversible electrochemical reaction for most Li-S batteries. Here we realize safe high temperature Li-S batteries on universal carbon-sulfur electrodes by molecular layer deposited (MLD) alucone coating. Sulfur cathodes with MLD coating complete the reversible electrochemical process in carbonate electrolyte and exhibit a safe and ultrastable cycle life at high temperature, which promise practicable Li-S batteries for electric vehicles and other large-scale energy storage systems.

Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roul, Basanta; Kumar, Mahesh; Central Research Laboratory, Bharat Electronics, Bangalore 560013

InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TEmore » and TFE models were 1.08 and 1.43 eV, respectively.« less

Effect of temperature on the electrical properties of Zn0.95M0.05O (M = Zn, Fe, Ni)

NASA Astrophysics Data System (ADS)

Sedky, A.; Mohamed, S. B.

2014-01-01

We report here the structural and electrical properties of Zn0.95M0.05O ceramic varistors, M = Zn, Ni and Fe. The samples were tested for phase purity and structural morphology by using X-Ray diffraction XRD and scanning electron microscope SEM techniques. The current-voltage characteristics J-E were obtained by dc electrical measurements in the temperature range of 300-500 K. Addition of doping did not influence the hexagonal wurtzite structure of ZnO ceramics. Furthermore, the lattice parameters ratio c/a for hexagonal distortion and the length of the bond parallel to the c axis, u were nearly unaffected. The average grain size was decreased from 1.57 μm for ZnO to 1.19 μm for Ni sample and to 1.22 μm for Fe sample. The breakdown field EB was decreased as the temperature increased, in the following order: Fe > Zn > Ni. The nonlinear region was clearly observed for all samples as the temperature increased up to 400 K and completely disappeared with further increase of temperature up to 500 K. The values of nonlinear coefficient, a were between 1.16 and 42 for all samples, in the following order: Fe > Zn > Ni. Moreover, the electrical conductivity s was gradually increased as the temperature increased up to 500 K, in the following order: Ni > Zn > Fe. On the other hand, the activation energies were 0.194 eV, 0.136 and 0.223 eV for all samples, in the following order: Fe, Zn and Ni. These results have been discussed in terms of valence states, magnetic moment and thermo-ionic emission, which were produced by the doping, and controlling the potential barrier of ZnO.

Properties of planetary fluids at high pressure and temperature

NASA Technical Reports Server (NTRS)

Nellis, W. J.; Hamilton, D. C.; Holmes, N. C.; Radousky, H. B.; Ree, F. H.; Ross, M.; Young, D. A.; Nicol, M.

1987-01-01

In order to derive models of the interiors of Uranus, Neptune, Jupiter and Saturn, researchers studied equations of state and electrical conductivities of molecules at high dynamic pressures and temperatures. Results are given for shock temperature measurements of N2 and CH4. Temperature data allowed demonstration of shock induced cooling in the the transition region and the existence of crossing isotherms in P-V space.

Testing of the permanent magnet material Mn-Al-C for potential use in propulsion motors for electric vehicles

NASA Technical Reports Server (NTRS)

Abdelnour, Z.; Mildrun, H.; Strant, K.

1981-01-01

The development of Mn-Al-C permanent magnets is reviewed. The general properties of the material are discussed and put into perspective relative to alnicos and ferrites. The traction motor designer's demands of a permanent magnet for potential use in electric vehicle drives are reviewed. Tests determined magnetic design data and mechanical strength properties. Easy axis hysteresis and demagnetization curves, recoil loops and other minor loop fields were measured over a temperature range from -50 to 150 C. Hysteresis loops were also measured for three orthogonal directions (the one easy and two hard axes of magnetization). Extruded rods of three different diameters were tested. The nonuniformity of properties over the cross section of the 31 mm diameter rod was studied. Mechanical compressive and bending strength at room temperature was determined on individual samples from the 31 mm rod.

Electrical properties and Raman studies of phase transitions in ferroelectric [N(CH3)4]2CoCl2Br2

NASA Astrophysics Data System (ADS)

Ben Mohamed, C.; Karoui, K.; Bulou, A.; Ben Rhaiem, A.

2018-03-01

The present paper accounted for the synthesis, electric properties and vibrational spectroscopy of [N(CH3)4]2CoCl2Br2. The dielectric spectra were measured in the frequency range 10-1-105 Hz and temperature interval from 223 to 393 K. The dielectical properties confirm the ferroelectric-paraelectric phase transition at 290 K, which is reported by Abdallah Ben Rhaiem et al. (2013). The equivalent circuit based on the Z-View-software was proposed and the conduction mechanisms were determined. The obtained results have been discussed in terms of the correlated barrier hopping model (CBH) in phase I and non-overlapping small polaron tunneling model (NSPT) in phases II and III. Raman spectra as function temperature have been used to characterize the phase transitions and their nature, which indicates a change of the some peak near the transitions phase.

Effect of Mn2+ doping on structural, electrical transport and dielectric properties of CoFe2O4 nanoparticles

NASA Astrophysics Data System (ADS)

Ansari, Mohd Mohsin Nizam; Khan, Shakeel; Bhargava, Richa; Ahmad, Naseem

2018-05-01

Manganese substituted cobalt ferrites, Co1-xMnxFe2O4 (0.0, 0.1, 0.2, 0.3 and 0.4) were successfully synthesized by sol-gel method. XRD analysis confirmed the formation of a single-phase cubic spinel structures having Fd-3m space group and crystallite size is found to be in the range of 12.9 - 15.5 nm. The lattice parameter increased from 8.4109 Å to 8.4531 Å with increasing Mn2+ ion doping. Dielectric constant (ɛ'), dielectric loss (tanδ) and ac conductivity (σac) were analyzed at room temperature as a function of frequency (42 Hz to 5 MHz) and the behavior is explained on the basis of Maxwell-Wagner interfacial polarization. DC electrical resistivity measurements were carried out by two-probe method. DC electrical resistivity decreases with increase in temperature confirms the semiconducting nature of the samples. Impedance spectroscopy method has been used to understand the conduction mechanism and the effect of grains and grain boundary on the electrical properties of the materials.

Effect of neodymium substitution on the electric and dielectric properties of Mn-Ni-Zn ferrite

NASA Astrophysics Data System (ADS)

Agami, W. R.

2018-04-01

Ferrite samples of Mn0.5Ni0.1Zn0.4NdxFe2-xO4 (x = 0.0, 0.01, 0.02, 0.05, 0.075 and 0.1) have been prepared by usual ceramic method. The temperature and composition dependences of the dc electric resistivity (ρdc) were studied. The frequency and composition dependences of the ac electric resistivity (ρac) and dielectric parameters (dielectric constant ε' and dielectric loss ε'') have been investigated. ρdc was found to decrease with temperature for all samples while it increases with increasing Nd3+ concentration. On the other hand, ρac and the dielectric properties were found to decrease with increasing the frequency while ρac increases and both ε' and ε'' decrease with increasing Nd3+ concentration. These results were explained by the Maxwell-Wagner two-layer model and Koops's theory. The improvement in dc and ac electric resistivities shows that these prepared materials are valid for decreasing the eddy current losses at high frequencies, so they can be used in the fabrication of multilayer chip inductor (MLCI) devices.

The effect of temperature on ferroelectric properties of CaCu3Ti4O12 ceramic

NASA Astrophysics Data System (ADS)

Kumar, Sandeep; Ahlawat, Neetu; Punia, Suman

2014-04-01

CaCu3Ti4O12 (CCTO) ceramic was synthesized by conventional solid-state reaction technique and sintered at 1353K for 10 hours. The dielectric properties of CCTO were analyzed in 1Hz-5 MHz frequency range, from room temperature to 413K. The ferroelectric properties of CCTO were analyzed at various frequencies viz. 50 Hz, 100 Hz and 200 Hz at temperatures (298K to 413K). Result of these investigation points that with increasing temperature the values of coercive field (Ec) and remnant polarization (Pr) decrease while maximum polarization (Pmax) increases non-linearly. P-E hysteresis loop of CCTO goes to slimed and a ferroelectric to Para-electric phase transition is observed at 403K.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ge, Zhen-Hua; Wei, Kaya; Lewis, Hutton

A hydrothermal approach was employed to efficiently synthesize SnSe nanorods. The nanorods were consolidated into polycrystalline SnSe by spark plasma sintering for low temperature electrical and thermal properties characterization. The low temperature transport properties indicate semiconducting behavior with a typical dielectric temperature dependence of the thermal conductivity. The transport properties are discussed in light of the recent interest in this material for thermoelectric applications. The nanorod growth mechanism is also discussed in detail. - Graphical abstract: SnSe nanorods were synthesized by a simple hydrothermal method through a bottom-up approach. Micron sized flower-like crystals changed to nanorods with increasing hydrothermal temperature.more » Low temperature transport properties of polycrystalline SnSe, after SPS densification, were reported for the first time. This bottom-up synthetic approach can be used to produce phase-pure dense polycrystalline materials for thermoelectrics applications. - Highlights: • SnSe nanorods were synthesized by a simple and efficient hydrothermal approach. • The role of temperature, time and NaOH content was investigated. • SPS densification allowed for low temperature transport properties measurements. • Transport measurements indicate semiconducting behavior.« less

Properties of air-aluminum thermal plasmas

NASA Astrophysics Data System (ADS)

Cressault, Y.; Gleizes, A.; Riquel, G.

2012-07-01

We present the calculation and the main results of the properties of air-aluminum thermal plasmas, useful for complete modelling of arc systems involving aluminum contacts. The properties are calculated assuming thermal equilibrium and correspond to the equilibrium composition, thermodynamic functions, transport coefficients including diffusion coefficients and net emission coefficient representing the divergence of the radiative flux in the hottest plasma regions. The calculation is developed in the temperature range between 2000 and 30 000 K, for a pressure range from 0.1 to 1 bar and for several metal mass proportions. As in the case of other metals, the presence of aluminum vapours has a strong influence on three properties at intermediate temperatures: the electron number density, the electrical conductivity and the net emission coefficient. Some comparisons with other metal vapour (Cu, Fe and Ag) properties are made and show the original behaviour for Al-containing mixtures: mass density at high temperatures is low due to the low Al atomic mass; high electrical conductivity at T < 10 000 K due to low ionization potential (around 2 V less for Al than for the other metals); very strong self-absorption of ionized aluminum lines, leading to a net emission coefficient lower than that of pure air when T > 10 000 K, in contrast to copper or iron radiation.

The Effect of Curing Temperature on the Properties of Cement Pastes Modified with TiO2 Nanoparticles

PubMed Central

Pimenta Teixeira, Karine; Perdigão Rocha, Isadora; De Sá Carneiro, Leticia; Flores, Jessica; Dauer, Edward A.; Ghahremaninezhad, Ali

2016-01-01

This paper investigates the effect of curing temperature on the hydration, microstructure, compressive strength, and transport of cement pastes modified with TiO2 nanoparticles. These characteristics of cement pastes were studied using non-evaporable water content measurement, X-ray diffraction (XRD), compressive strength test, electrical resistivity and porosity measurements, and scanning electron microscopy (SEM). It was shown that temperature enhanced the early hydration. The cement pastes cured at elevated temperatures generally showed an increase in compressive strength at an early age compared to the cement paste cured at room temperature, but the strength gain decreased at later ages. The electrical resistivity of the cement pastes cured at elevated temperatures was found to decrease more noticeably at late ages compared to that of the room temperature cured cement paste. SEM examination indicated that hydration product was more uniformly distributed in the microstructure of the cement paste cured at room temperature compared to the cement pastes cured at elevated temperatures. It was observed that high temperature curing decreased the compressive strength and electrical resistivity of the cement pastes at late ages in a more pronounced manner when higher levels of TiO2 nanoparticles were added. PMID:28774073

Conducting single-molecule magnet materials.

PubMed

Cosquer, Goulven; Shen, Yongbing; Almeida, Manuel; Yamashita, Masahiro

2018-05-11

Multifunctional molecular materials exhibiting electrical conductivity and single-molecule magnet (SMM) behaviour are particularly attractive for electronic devices and related applications owing to the interaction between electronic conduction and magnetization of unimolecular units. The preparation of such materials remains a challenge that has been pursued by a bi-component approach of combination of SMM cationic (or anionic) units with conducting networks made of partially oxidized (or reduced) donor (or acceptor) molecules. The present status of the research concerning the preparation of molecular materials exhibiting SMM behaviour and electrical conductivity is reviewed, describing the few molecular compounds where both SMM properties and electrical conductivity have been observed. The evolution of this research field through the years is discussed. The first reported compounds are semiconductors in spite being able to present relatively high electrical conductivity, and the SMM behaviour is observed at low temperatures where the electrical conductivity of the materials is similar to that of an insulator. During the recent years, a breakthrough has been achieved with the coexistence of high electrical conductivity and SMM behaviour in a molecular compound at the same temperature range, but so far without evidence of a synergy between these properties. The combination of high electrical conductivity with SMM behaviour requires not only SMM units but also the regular and as far as possible uniform packing of partially oxidized molecules, which are able to provide a conducting network.

Electric field poling induced self-biased converse magnetoelectric response in PMN-PT/NiFe2O4 nanocomposites

NASA Astrophysics Data System (ADS)

Ahlawat, Anju; Satapathy, S.; Deshmukh, Pratik; Shirolkar, M. M.; Sinha, A. K.; Karnal, A. K.

2017-12-01

In this letter, studies on structural transitions and the effect of electric field poling on magnetoelectric (ME) properties in 0.65Pb (Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT)/NiFe2O4 (NFO) nanocomposites are reported. The composite illustrates dramatic changes in the NFO crystal structure across ferroelectric transition temperature [Curie temperature (Tc) ˜ 450 K] of PMN-PT, while pure NFO does not exhibit any structural change in the temperature range (300 K-650 K). Synchrotron based X-ray diffraction analysis revealed the splitting of NFO peaks across the Tc of PMN-PT in the PMN-PT/NFO composite. Consequently, the anomalies are observed in temperature dependent magnetization of the NFO phase at the Tc of PMN-PT, establishing ME coupling in the PMN-PT/NFO composite. Furthermore, the composite exhibits drastic modification in ME coupling under electrically poled and unpoled conditions. A large self-biased ME effect characterized by non-zero ME response at zero Hbias was observed in electrically poled composites, which was not observed in unpoled PMN-PT/NFO. These results propose an alternative mechanism for intrinsic converse ME effects. The maximum magnetoelectric output was doubled after electrical poling. The observed self-biased converse magnetoelectric effect at room temperature provides potential applications in electrically controlled memory devices and magnetic flux control devices.

Growth and characterization of sol-gel derived CuGaO2 semiconductor thin films for UV photodetector application

NASA Astrophysics Data System (ADS)

Tsay, Chien-Yie; Chen, Ching-Lien

2017-06-01

In this study, a p-type wide-bandgap oxide semiconductor CuGaO2 thin film was grown on quartz substrate by sol-gel method. The authors report the influence of annealing temperature on the phase transformation, structural features, and electrical properties of sol-gel derived Cu-Ga-O thin films. At relatively low annealing temperatures (≤900 °C), the films are a mixture of CuGa2O4, CuGaO2, and CuO phases. At relatively high annealing temperatures (≥925 °C), the majority phase in the films is delafossite CuGaO2. All as-prepared Cu-Ga-O thin films exhibited p-type conductivity, as confirmed by Hall measurements. The mean electrical resistivity of the Cu-Ga-O films decreased from 3.54×104 Ω-cm to 1.35×102 Ω-cm and then increased slightly to 3.51×102 Ω-cm when the annealing temperature was increased from 850 °C to 950 °C. We found that annealing the Cu-based oxide thin films at 925 °C produced nearly phase-pure CuGaO2 thin films with good densification. Such thin films exhibited the best electrical properties: a mean electrical resistivity of 1.35×102 Ω-cm, and a mean hole concentration of 1.60×1016 cm-3. In addition, we also fabricated and characterized MSM-type CuGaO2 UV photodetectors on quartz substrates.

Revisit of pressure-induced phase transition in PbSe: Crystal structure, and thermoelastic and electrical properties

DOE PAGES

Wang, Shanmin; Zang, Chengpeng; Wang, Yongkun; ...

2015-05-04

Lead selenide, PbSe, an important lead chalcogenide semiconductor, has been investigated using in–situ high–pressure/high–temperature synchrotron x–ray diffraction and electrical resistivity measurements. For the first time, high–quality x-ray diffraction data were collected for the intermediate orthorhombic PbSe. Combined with ab initio calculations, we find a Cmcm, InI–type symmetry for the intermediate phase, which is structurally more favorable than the anti–GeS–type Pnma. At room temperature, the onset of the cubic–orthorhombic transition was observed at ~3.5 GPa with a ~3.4% volume reduction. At an elevated temperature of 1000 K, the reversed orthorhombic–to–cubic transition was observed at 6.12 GPa, indicating a positive Clapeyron slopemore » for the phase boundary. Interestingly, phase–transition induced elastic softening in PbSe was also observed, which can be mainly attributed to the loosely bonded trigonal prisms along the b–axis in the Cmcm structure. Compared with the cubic phase, orthorhombic PbSe exhibits a large negative pressure dependence of electrical resistivity. Additionally, thermoelastic properties of orthorhombic PbSe have been derived from isothermal compression data, such as temperature derivative of bulk modulus and thermally induced pressure.« less

Investigation of the heating behavior of carbide-bonded graphene coated silicon wafer used for hot embossing

NASA Astrophysics Data System (ADS)

Yang, Gao; Li, Lihua; Lee, Wing Bun; Ng, Man Cheung; Chan, Chang Yuen

2018-03-01

A recently developed carbide-bonded graphene (CBG) coated silicon wafer was found to be an effective micro-patterned mold material for implementing rapid heating in hot embossing processes owing to its superior electrical and thermal conductivity, in addition to excellent mechanical properties. To facilitate the achievement of precision temperature control in the hot embossing, the heating behavior of a CBG coated silicon wafer sample was experimentally investigated. First, two groups of controlled experiments were conducted for quantitatively evaluating the influence of the main factors such as the vacuum pressure and gaseous environment (vacuum versus nitrogen) on its heating performance. The electrical and thermal responses of this sample under a voltage of 60 V were then intensively analyzed, and revealed that it had somewhat semi-conducting properties. Further, we compared its thermal profiles under different settings of the input voltage and current limiting threshold. Moreover, the strong temperature dependence of electrical resistance for this material was observed and determined. Ultimately, the surface temperature of CBG coated silicon wafer could be as high as 1300 ℃, but surprisingly the graphene coating did not detach from the substrate under such an elevated temperature due to its strong thermal coupling with the silicon wafer.

CdO-based nanostructures as novel CO2 gas sensors

NASA Astrophysics Data System (ADS)

Krishnakumar, T.; Jayaprakash, R.; Prakash, T.; Sathyaraj, D.; Donato, N.; Licoccia, S.; Latino, M.; Stassi, A.; Neri, G.

2011-08-01

Crystalline Cd(OH)2/CdCO3 nanowires, having lengths in the range from 0.3 up to several microns and 5-30 nm in diameter, were synthesized by a microwave-assisted wet chemical route and used as a precursor to obtain CdO nanostructures after a suitable thermal treatment in air. The morphology and microstructure of the as-synthesized and annealed materials have been investigated by scanning electron microscopy, transmission electron microscopy, x-ray diffraction and thermogravimetry-differential scanning calorimetry. The change in morphology and electrical properties with temperature has revealed a wire-to-rod transformation along with a decreases of electrical resistance. Annealed samples were printed on a ceramic substrate with interdigitated contacts to fabricate resistive solid state sensors. Gas sensing properties were explored by monitoring CO2 in synthetic air in the concentration range 0.2-5 v/v% (2000-50 000 ppm). The effect of annealing temperature, working temperature and CO2 concentration on sensing properties (sensitivity, response/recovery time and stability) were investigated. The results obtained demonstrate that CdO-based thick films have good potential as novel CO2 sensors for practical applications.

Electric modulation of conduction in multiferroic Ni-doped GaFeO3 ceramics

NASA Astrophysics Data System (ADS)

Ghani, Awais; Yang, Sen; Rajput, S. S.; Ahmed, S.; Murtaza, Adil; Zhou, Chao; Yu, Zhonghai; Zhang, Yin; Song, Xiaoping; Ren, Xiaobing

2018-06-01

In this work, the effects of Ni substitution on the electrical leakage and multiferroic properties of GaFeO3 were examined. Structural analysis of grown ceramics using x-ray diffraction and Raman shows that all ceramics have pure phases with an orthorhombic structure and space group. Ni substitutions slightly modify lattice parameters and induce lattice distortion within the same crystalline structure. It is observed that with increasing Ni-content up to 0.10, the magnetic transition temperature () increases from 196 K to 407 K. Ni-doped samples showed better ferroelectric properties and a drastic reduction in leakage current (~three orders of magnitude) at room temperature. Enhanced characteristics behavior is observed for 10% Ni substitution (GaFe0.9Ni0.1O3) and higher substitution leads to deterioration of properties with a larger leakage current. It is proposed that the role of Ni substitution can reduce hopping between Fe+3 and Fe+2 as well as suppressing the oxygen vacancies. This work would open new possibilities for integrating polycrystalline GaFeO3 at room temperature for magnetoelectric applications.

Analysis on the correlation between temperature and discharge characteristic of cloud-to-ground lightning discharge plasma with multiple return strokes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qu Haiyan; Chang Zhengshi; Yuan Ping

2011-01-15

The spectra of cloud-to-ground lightning with multiple return strokes have been obtained by using a slitless spectrograph on the Chinese Tibet plateau. Combining the spectra with synchronous electrical information, the correlation among spectral properties, channel temperatures and discharge characteristics, and thermal effects of current is discussed for the first time. The results show that the channel plasma temperature varies significantly from stroke to stroke within a given flash, and the total intensity of spectra is directly proportional to the amplitude of electric field change. Moreover, the positive correlation has been confirmed between the channel plasma temperature and the thermal effectmore » which shows the effect of the electric current accumulation. It is inferred that the total intensity of the spectra should be directly proportional to the intensity of discharge current, and channel temperature is correlated positively with the energy transmission in one return stroke.« less

Deformable inorganic semiconductor

NASA Astrophysics Data System (ADS)

Kim, Dae-Hyeong; Cha, Gi Doo

2018-05-01

Unlike conventional inorganic semiconductors, which are typically brittle, α-Ag2S exhibits room-temperature ductility with favourable electrical properties, offering promise for use in high-performance flexible and stretchable devices.

Correlation between microstructure and electrical transport properties of La0.7(Ba1-xCax)0.3MnO3 (x = 0 and 0.03) synthesized by sol-gel

NASA Astrophysics Data System (ADS)

Kurniawan, Budhy; Winarsih, Suci; Imaduddin, Agung; Manaf, Azwar

2018-03-01

In this paper, we reported the correlation of structure, microstructure, and electrical transport properties of polycrystalline La0.7(Ba1-xCax)0.3MnO3 (x = 0 and 0.03). The materials were synthesized by sol-gel method. These materials have interesting electronic and magnetic properties which are heavily affected by the degree of crystallographic mismatch between the La and Mn sites. By tuning these sites, the double exchange (DE) and Coulomb interactions among Mn ions can be artificially controlled. La0.7Ba0.3MnO3 is one of the strong candidates for application because it has high magnetoresistance and magnetocaloric properties. Doped Ca to the La0.7Ba0.3MnO3 is aimed for reducing its transition temperature to near room temperature and increasing the magnetoresistance and magnetocaloric properties of this material. Jahn-Teller distortion can be linked to core-shell model with the result of percolation model.

Computation of electron transport and relaxation properties in gases based on improved multi-term approximation of Boltzmann equation

NASA Astrophysics Data System (ADS)

Cai, X. J.; Wang, X. X.; Zou, X. B.; Lu, Z. W.

2018-01-01

An understanding of electron kinetics is of importance in various applications of low temperature plasmas. We employ a series of model and real gases to investigate electron transport and relaxation properties based on improved multi-term approximation of the Boltzmann equation. First, a comparison of different methods to calculate the interaction integrals has been carried out; the effects of free parameters, such as vmax, lmax, and the arbitrary temperature Tb, on the convergence of electron transport coefficients are analyzed. Then, the modified attachment model of Ness et al. and SF6 are considered to investigate the effect of attachment on the electron transport properties. The deficiency of the pulsed Townsend technique to measure the electron transport and reaction coefficients in electronegative gases is highlighted when the reduced electric field is small. In order to investigate the effect of external magnetic field on the electron transport properties, Ar plasmas in high power impulse sputtering devices are considered. In the end, the electron relaxation properties of the Reid model under the influence of electric and magnetic fields are demonstrated.

Experiments in Ice Physics.

ERIC Educational Resources Information Center

Martin, P. F.; And Others

1978-01-01

Describes experiments in ice physics that demonstrate the behavior and properties of ice. Show that ice behaves as an ionic conductor in which charge is transferred by the movement of protons, its electrical conductivity is highly temperature-dependent, and its dielectric properties show dramatic variation in the kilohertz range. (Author/GA)

Revival of ferromagnetic behavior in charge-ordered Pr0.75Na0.25MnO3 manganite by ruthenium doping at Mn site and its MR effect

NASA Astrophysics Data System (ADS)

Elyana, E.; Mohamed, Z.; Kamil, S. A.; Supardan, S. N.; Chen, S. K.; Yahya, A. K.

2018-02-01

Ru doping in charge-ordered Pr0.75Na0.25Mn1-xRuxO3 (x = 0-0.1) manganites was studied to investigate its effect on structure, electrical transport, magnetic properties, and magnetotransport properties. DC electrical resistivity (ρ), magnetic susceptibility, and χ' measurements showed that sample x = 0 exhibits insulating behavior within the entire temperature range and antiferromagnetic (AFM) behavior below the charge-ordering (CO) transition temperature TCO of 221 K. Ru4+ substitution (x>0.01) suppressed the CO state, which resulted in the revival of paramagnetic to ferromagnetic (FM) transition at the Curie temperature Tc, increasing from 120 K (x = 0.01) to 193 K (x = 0.1). Deviation from the Curie-Weiss law above Tc in the 1/χ' versus T plot for x = 0.01 doped samples indicated the existence of Griffiths phase with Griffith temperature at 169 K. Electrical resistivity measurements showed that Ru4+ substitution increased the metallic-to-insulating transition temperature TMI from 144 K (x = 0.01) to 192 K (x = 0.05) due to enhanced double-exchange mechanism, but TMI decreased to 176 K (x = 0.1) probably due to the existence of AFM clusters within the FM domain. The present work also discussed the possible theoretical models at the resistivity curve of Pr0.75Na0.25Mn1-xRuxO3 (x = 0-0.1) for the entire temperature range.

Structure Evolution and Thermoelectric Properties of Carbonized Polydopamine Thin Films.

PubMed

Li, Haoqi; Aulin, Yaroslav V; Frazer, Laszlo; Borguet, Eric; Kakodkar, Rohit; Feser, Joseph; Chen, Yan; An, Ke; Dikin, Dmitriy A; Ren, Fei

2017-03-01

Carbonization of nature-inspired polydopamine can yield thin films with high electrical conductivity. Understanding of the structure of carbonized PDA (cPDA) is therefore highly desired. In this study, neutron diffraction, Raman spectroscopy, and other techniques indicate that cPDA samples are mainly amorphous with some short-range ordering and graphite-like structure that emerges with increasing heat treatment temperature. The electrical conductivity and the Seebeck coefficient show different trends with heat treatment temperature, while the thermal conductivity remains insensitive. The largest room-temperature ZT of 2 × 10 -4 was obtained on samples heat-treated at 800 °C, which is higher than that of reduced graphene oxide.

Structure and Differentiated Electrical Characteristics of M1/2La1/2Cu3Ti4O12 (M = Li, Na, K) Ceramics Prepared by Sol-Gel Method

NASA Astrophysics Data System (ADS)

Liu, Zhanqing; Yang, Zupei

2017-10-01

New M1/2La1/2Cu3Ti4O12 (M = Li, Na, K) ceramics based on partial substitution of Li+, Na+, and K+ for La3+ in La2/3Cu3Ti4O12 (LCTO) have been prepared by a sol-gel method, and the effects of Li+, Na+, and K+ on the microstructure and electrical properties investigated in detail, revealing different results depending on the substituent. The cell parameter increased with increasing radius of the substituent ion (Li+, Na+, K+). Li1/2La1/2Cu3Ti4O12 (LLCTO) ceramic showed better frequency and temperature stability, but the dielectric constant decreased and the third abnormal dielectric peak disappeared from the dielectric temperature spectrum. Na1/2La1/2Cu3Ti4O12 (NLCTO) ceramic exhibited higher dielectric constant and better frequency and temperature stability, and displayed the second dielectric relaxation in electric modulus plots. The performance of K1/2La1/2Cu3Ti4O12 (KLCTO) ceramic was deteriorated. These different microstructures and electrical properties may be due to the effect of different defect structures generated in the ceramic as well as grain size. This work represents the first analysis and comparison of these remarkable differences in the electrical behavior of ceramics obtained by partial substitution of Li+, Na+, and K+ for La3+ in LCTO.

Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

NASA Astrophysics Data System (ADS)

Hassanien, A. S.; Akl, Alaa A.

2016-01-01

Compositional dependence of optical and electrical properties of chalcogenide CdSxSe1-x (0.4 ≥ x ≥ 0.0 at. %) thin films was studied. Cadmium sulphoselenide films were deposited by thermal evaporation technique at vacuum (8.2 × 10-4 Pa) onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at 2.50 nm/s and 375 ± 5 nm, respectively. X-ray diffractograms showed that, the deposited films have the low crystalline nature. Energy dispersive analysis by X-ray (EDAX) was used to check the compositional elements of deposited films. The absorption coefficient was determined from transmission and reflection measurements at room temperature in the wavelength range 300-2500 nm. Optical density, skin depth, optical energy gap and Urbach's parameters of CdSSe thin films have also been estimated. The direct optical energy gap decreased from 2.248 eV to 1.749 eV when the ratio of Se-content was increased from 0.60 to 1.00 . Conduction band and valance band positions were evaluated. The temperature dependence of dc-electrical resistivity in the temperature range (293-450 K) has been reported. Three conduction regions due to different conduction mechanisms were detected. Electrical sheet resistance, activation energy and pre-exponential parameters were discussed. The estimated values of optical and electrical parameters were strongly dependent upon the Se-content in CdSSe matrix.

Electrical Resistance of SiC/SiC Ceramic Matrix Composites for Damage Detection and Life-Prediction

NASA Technical Reports Server (NTRS)

Smith, Craig; Morscher, Gregory; Xia, Zhenhai

2009-01-01

Ceramic matrix composites (CMC) are suitable for high temperature structural applications such as turbine airfoils and hypersonic thermal protection systems due to their low density high thermal conductivity. The employment of these materials in such applications is limited by the ability to accurately monitor and predict damage evolution. Current nondestructive methods such as ultrasound, x-ray, and thermal imaging are limited in their ability to quantify small scale, transverse, in-plane, matrix cracks developed over long-time creep and fatigue conditions. CMC is a multifunctional material in which the damage is coupled with the material s electrical resistance, providing the possibility of real-time information about the damage state through monitoring of resistance. Here, resistance measurement of SiC/SiC composites under mechanical load at both room temperature monotonic and high temperature creep conditions, coupled with a modal acoustic emission technique, can relate the effects of temperature, strain, matrix cracks, fiber breaks, and oxidation to the change in electrical resistance. A multiscale model can in turn be developed for life prediction of in-service composites, based on electrical resistance methods. Results of tensile mechanical testing of SiC/SiC composites at room and high temperatures will be discussed. Data relating electrical resistivity to composite constituent content, fiber architecture, temperature, matrix crack formation, and oxidation will be explained, along with progress in modeling such properties.

Electrical and geochemical properties of tufa deposits as related to mineral composition in the South Western Desert, Egypt

NASA Astrophysics Data System (ADS)

Gomaa, Mohamed M.; Abou El-Anwar, Esmat A.

2015-06-01

The geochemical, petrographical, and electrical properties of rocks are essential to the investigation of the properties of minerals. In this paper we will try to present a study of the A. C. electrical properties of carbonate rock samples and their relation to petrographical and geochemical properties. Samples were collected from four formations from the Bir Dungul area, in the South Western Desert, Egypt. The electrical properties of the samples were measured using a non-polarizing electrode, at room temperature (~28 °C), and at a relative atmospheric humidity of (~45%), in the frequency range from 42 Hz to 5 MHz. The changes in the electrical properties were argued to the change in mineral composition. Generally, the electrical properties of rocks are changed due to many factors e.g., grain size, mineral composition, grain shape and inter-granular relations between grains. The dielectric constant of samples decreases with frequency, and increases with conductor concentration. Also, the conductivity increases with an increase of continuous conductor paths between electrodes. The petrographical and geochemical studies reveal that the deposition of the tufa deposits occurred in shallow lakes accompanied by a high water table, an alkaline spring recharge and significant vegetation cover. Diagenetically, tufa deposits were subjected to early and late diagenesis. Petrography and geochemistry studies indicated that the area of tufa deposits was deposited under the control of bacterial activity. Geochemically, the Sr content indicates that the tufa deposits formed from dissolved bicarbonate under the control of microbes and bacterial activity.

Experimental evaluation of the thermal properties of two tissue equivalent phantom materials.

PubMed

Craciunescu, O I; Howle, L E; Clegg, S T

1999-01-01

Tissue equivalent radio frequency (RF) phantoms provide a means for measuring the power deposition of various hyperthermia therapy applicators. Temperature measurements made in phantoms are used to verify the accuracy of various numerical approaches for computing the power and/or temperature distributions. For the numerical simulations to be accurate, the electrical and thermal properties of the materials that form the phantom should be accurately characterized. This paper reports on the experimentally measured thermal properties of two commonly used phantom materials, i.e. a rigid material with the electrical properties of human fat, and a low concentration polymer gel with the electrical properties of human muscle. Particularities of the two samples required the design of alternative measuring techniques for the specific heat and thermal conductivity. For the specific heat, a calorimeter method is used. For the thermal diffusivity, a method derived from the standard guarded comparative-longitudinal heat flow technique was used for both materials. For the 'muscle'-like material, the thermal conductivity, density and specific heat at constant pressure were measured as: k = 0.31 +/- 0.001 W(mK)(-1), p = 1026 +/- 7 kgm(-3), and c(p) = 4584 +/- 107 J(kgK)(-1). For the 'fat'-like material, the literature reports on the density and specific heat such that only the thermal conductivity was measured as k = 0.55 W(mK)(-1).

Experimental and numerical investigation of the effective electrical conductivity of nitrogen-doped graphene nanofluids

NASA Astrophysics Data System (ADS)

Mehrali, Mohammad; Sadeghinezhad, Emad; Rashidi, Mohammad Mehdi; Akhiani, Amir Reza; Tahan Latibari, Sara; Mehrali, Mehdi; Metselaar, Hendrik Simon Cornelis

2015-06-01

Electrical conductivity is an important property for technological applications of nanofluids that have not been widely investigated, and few studies have been concerned about the electrical conductivity. In this study, nitrogen-doped graphene (NDG) nanofluids were prepared using the two-step method in an aqueous solution of 0.025 wt% Triton X-100 as a surfactant at several concentrations (0.01, 0.02, 0.04, 0.06 wt%). The electrical conductivity of the aqueous NDG nanofluids showed a linear dependence on the concentration and increased up to 1814.96 % for a loading of 0.06 wt% NDG nanosheet. From the experimental data, empirical models were developed to express the electrical conductivity as functions of temperature and concentration. It was observed that increasing the temperature has much greater effect on electrical conductivity enhancement than increasing the NDG nanosheet loading. Additionally, by considering the electrophoresis of the NDG nanosheets, a straightforward electrical conductivity model is established to modulate and understand the experimental results.

Analysis of temperature rise for piezoelectric transformer using finite-element method.

PubMed

Joo, Hyun-Woo; Lee, Chang-Hwan; Rho, Jong-Seok; Jung, Hyun-Kyo

2006-08-01

Analysis of heat problem and temperature field of a piezoelectric transformer, operated at steady-state conditions, is described. The resonance frequency of the transformer is calculated from impedance and electrical gain analysis using a finite-element method. Mechanical displacement and electric potential of the transformer at the calculated resonance frequency are used to calculate the loss distribution of the transformer. Temperature distribution using discretized heat transfer equation is calculated from the obtained losses of the transformer. Properties of the piezoelectric material, dependent on the temperature field, are measured to recalculate the losses, temperature distribution, and new resonance characteristics of the transformer. Iterative method is adopted to recalculate the losses and resonance frequency due to the changes of the material constants from temperature increase. Computed temperature distributions and new resonance characteristics of the transformer at steady-state temperature are verified by comparison with experimental results.

Changes in the Electrical Conductivity and Catalytic Property of Vanadium Iron Borophosphate Glasses with Crystallization

NASA Astrophysics Data System (ADS)

Cha, Jaemin; Jeong, Hwajin; Ryu, Bongki

2018-05-01

Glasses were prepared in the V2O5-P2O5-B2O3 system containing Fe2O3 and were crystallized to examine the changes in the structure, as well as the catalytic and the electrical properties. The glasses were annealed in a graphite mold at a temperature above the glass transition temperature for 1 h and were heat-treated at the crystallization temperature for 1 h, 6 h and 12 h, respectively. Fourier-transform infrared spectroscopy (FTIR) was employed to analyze the structural changes of the V-O bonds after crystallization while the X-ray photoelectron spectroscopy (XPS) analysis indicated a decrease in V5+ and an increase in V4+ amounts. The X-ray diffraction (XRD) analysis indicated that a new crystalline phase of non-stoichiometric Fe0.12V2O5 was formed after 1 h of heat treatment. Structural changes induced by the crystallization were analyzed by determining the molecular volume from the sample density. The conductivity and the catalytic property were examined based on the migration of V and Fe ions exhibiting different valence states with crystallization. Both the conductivity and the catalytic property improved after the samples had been crystallized at the crystallization peak temperature ( T p). Furthermore, as compared to the sample heat treated for 1 h, the conductance and catalytic properties were improved for samples crystallized at T p for 6 h and 12 h.

Colloidal Synthesis of Te-Doped Bi Nanoparticles: Low-Temperature Charge Transport and Thermoelectric Properties.

PubMed

Gu, Da Hwi; Jo, Seungki; Jeong, Hyewon; Ban, Hyeong Woo; Park, Sung Hoon; Heo, Seung Hwae; Kim, Fredrick; Jang, Jeong In; Lee, Ji Eun; Son, Jae Sung

2017-06-07

Electronically doped nanoparticles formed by incorporation of impurities have been of great interest because of their controllable electrical properties. However, the development of a strategy for n-type or p-type doping on sub-10 nm-sized nanoparticles under the quantum confinement regime is very challenging using conventional processes, owing to the difficulty in synthesis. Herein, we report the colloidal chemical synthesis of sub-10 nm-sized tellurium (Te)-doped Bismuth (Bi) nanoparticles with precisely controlled Te content from 0 to 5% and systematically investigate their low-temperature charge transport and thermoelectric properties. Microstructural characterization of nanoparticles demonstrates that Te ions are successfully incorporated into Bi nanoparticles rather than remaining on the nanoparticle surfaces. Low-temperature Hall measurement results of the hot-pressed Te-doped Bi-nanostructured materials, with grain sizes ranging from 30 to 60 nm, show that the charge transport properties are governed by the doping content and the related impurity and nanoscale grain boundary scatterings. Furthermore, the low-temperature thermoelectric properties reveal that the electrical conductivity and Seebeck coefficient expectedly change with the Te content, whereas the thermal conductivity is significantly reduced by Te doping because of phonon scattering at the sites arising from impurities and nanoscale grain boundaries. Accordingly, the 1% Te-doped Bi sample exhibits a higher figure-of-merit ZT by ∼10% than that of the undoped sample. The synthetic strategy demonstrated in this study offers the possibility of electronic doping of various quantum-confined nanoparticles for diverse applications.

Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

NASA Astrophysics Data System (ADS)

He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

2013-10-01

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

NASA Astrophysics Data System (ADS)

Cheemadan, Saheer; Santhosh Kumar, M. C.

2018-04-01

Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

Electrical properties of methane hydrate + sediment mixtures

USGS Publications Warehouse

Du Frane, Wyatt L.; Stern, Laura A.; Constable, Steven; Weitemeyer, Karen A.; Smith, Megan M; Roberts, Jeffery J.

2015-01-01

Knowledge of the electrical properties of multicomponent systems with gas hydrate, sediments, and pore water is needed to help relate electromagnetic (EM) measurements to specific gas hydrate concentration and distribution patterns in nature. Toward this goal, we built a pressure cell capable of measuring in situ electrical properties of multicomponent systems such that the effects of individual components and mixing relations can be assessed. We first established the temperature-dependent electrical conductivity (σ) of pure, single-phase methane hydrate to be ~5 orders of magnitude lower than seawater, a substantial contrast that can help differentiate hydrate deposits from significantly more conductive water-saturated sediments in EM field surveys. Here we report σ measurements of two-component systems in which methane hydrate is mixed with variable amounts of quartz sand or glass beads. Sand by itself has low σ but is found to increase the overall σ of mixtures with well-connected methane hydrate. Alternatively, the overall σ decreases when sand concentrations are high enough to cause gas hydrate to be poorly connected, indicating that hydrate grains provide the primary conduction path. Our measurements suggest that impurities from sand induce chemical interactions and/or doping effects that result in higher electrical conductivity with lower temperature dependence. These results can be used in the modeling of massive or two-phase gas-hydrate-bearing systems devoid of conductive pore water. Further experiments that include a free water phase are the necessary next steps toward developing complex models relevant to most natural systems.

The temperature dependences of electromechanical properties of PLZT ceramics

NASA Astrophysics Data System (ADS)

Czerwiec, M.; Zachariasz, R.; Ilczuk, J.

2008-02-01

The mechanical and electrical properties in lanthanum modified lead zirconate-titanate ceramics of 5/50/50 and 10/50/50 were studied by mechanical loss Q - 1, Young's modulus E, electric permittivity ɛ and tangent of dielectric loss of angle tgδ measurements. The internal friction Q - 1 and Young modulus E measured from 290 K to 600 K shows that Curie temperature TC is located at 574 K and 435 K (1st cycle of heating) respectively for ceramic samples 5/50/50 and 10/50/50. The movement of TC in second cycle of heating to lower temperature (561 K for 5/50/50 and 420 K for 10/50/50) has been observed. Together with Q - 1 and E measurements, temperature dependences of ɛ=f(T) and tgδ=f(T) were determinated in temperature range from 300 K to 730 K. The values of TC obtained during ɛ and tgδ measurements were respectively: 560 K for 5/50/50 and 419 K for 10/50/50. These temperatures are almost as high as the temperatures obtained by internal friction Q - 1 measurements in second cycle of heating. In ceramic sample 10/50/50 the additional maximum on internal friction Q - 1 curve at the temperature 316 K was observed.

Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures

NASA Astrophysics Data System (ADS)

Li, Sigong; Tan, Yongqiang; Xue, Jiaxiang; Liu, Tong; Zhou, Xiaosong; Zhang, Haibin

2018-01-01

The X-band electromagnetic interference (EMI) shielding properties of nano-layered Ti3SiC2 ceramics were evaluated from room temperature up to 800°C in order to explore the feasibility of Ti3SiC2 as efficient high temperature EMI shielding material. It was found that Ti3SiC2 exhibits satisfactory EMI shielding effectiveness (SE) close to 30 dB at room temperature and the EMI SE shows good temperature stability. The remarkable EMI shielding properties of Ti3SiC2 can be mainly attributed to high electrical conductivity, high dielectric loss and more importantly the multiple reflections due to the layered structure.

Ultrasonic Characterization of Superhard Material: Osmium Diboride

NASA Astrophysics Data System (ADS)

Yadawa, P. K.

2012-12-01

Higher order elastic constants have been calculated in hexagonal structured superhard material OsB2 at room temperature following the interaction potential model. The temperature variation of the ultrasonic velocities is evaluated along different angles with unique axis of the crystal using the second order elastic constants. The ultrasonic velocity decreases with the temperature along particular orientation with the unique axis. Temperature variation of the thermal relaxation time and Debye average velocities are also calculated along the same orientation. The temperature dependency of the ultrasonic properties is discussed in correlation with elastic, thermal and electrical properties. It has been found that the thermal conductivity is the main contributor to the behaviour of ultrasonic attenuation as a function of temperature and the responsible cause of attenuation is phonon-phonon interaction. The mechanical properties of OsB2 at low temperature are better than at high temperature, because at low temperature it has low ultrasonic velocity and ultrasonic attenuation. Superhard material OsB2 has many industrial applications, such as abrasives, cutting tools and hard coatings.

Processing/structure/property Relationships of Barium Strontium Titanate Thin Films for Dynamic Random Access Memory Application.

NASA Astrophysics Data System (ADS)

Peng, Cheng-Jien

The purpose of this study is to see the application feasibility of barium strontium titanate (BST) thin films on ultra large scale integration (ULSI) dynamic random access memory (DRAM) capacitors through the understanding of the relationships among processing, structure and electrical properties. Thin films of BST were deposited by multi-ion -beam reactive sputtering (MIBERS) technique and metallo -organic decomposition (MOD) method. The processing parameters such as Ba/Sr ratio, substrate temperature, annealing temperature and time, film thickness and doping concentration were correlated with the structure and electric properties of the films. Some effects of secondary low-energy oxygen ion bombardment were also examined. Microstructures of BST thin films could be classified into two types: (a) Type I structures, with multi-grains through the film thickness, for amorphous as-grown films after high temperature annealing, and (b) columnar structure (Type II) which remained even after high temperature annealing, for well-crystallized films deposited at high substrate temperatures. Type I films showed Curie-von Schweidler response, while Type II films showed Debted type behavior. Type I behavior may be attributed to the presence of a high density of disordered grain boundaries. Two types of current -voltage characteristics could be seen in non-bombarded films depending on the chemistry of the films (doped or undoped) and substrate temperature during deposition. Only the MIBERS films doped with high donor concentration and deposited at high substrate temperature showed space-charge -limited conduction (SCLC) with discrete shallow traps embedded in trap-distributed background at high electric field. All other non-bombarded films, including MOD films, showed trap-distributed SCLC behavior with a slope of {~}7.5-10 due to the presence of grain boundaries through film thickness or traps induced by unavoidable acceptor impurities in the films. Donor-doping could significantly improve the time -dependent dielectric breakdown (TDDB) behavior of BST thin films, mostly likely due to the lower oxygen vacancy concentration resulted from donor-doping.

Evaluation of high temperature dielectric films for high voltage power electronic applications

NASA Technical Reports Server (NTRS)

Suthar, J. L.; Laghari, J. R.

1992-01-01

Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200 C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250 C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200 C. However, above 200 C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.

Thickness and temperature dependent electrical characteristics of crystalline BaxSr1-xTiO3 thin films

NASA Astrophysics Data System (ADS)

Panda, B.; Roy, A.; Dhar, A.; Ray, S. K.

2007-03-01

Polycrystalline Ba1-xSrxTiO3 (BST) thin films with three different compositions have been deposited by radio-frequency magnetron sputtering technique on platinum coated silicon substrates. Samples with buffer and barrier layers for different film thicknesses and processing temperatures have been studied. Crystallite size of BST films has been found to increase with increasing substrate temperature. Thickness dependent dielectric constant has been studied and discussed in the light of an interfacial dead layer and the finite screening length of the electrode. Ferroelectric properties of the films have also been studied for various deposition conditions. The electrical resistivity of the films measured at different temperatures shows a positive temperature coefficient of resistance under a constant bias voltage.

Effect of oxidation on transport properties of zirconium-1% niobium alloy

NASA Astrophysics Data System (ADS)

Peletsky, V. E.; Musayeva, Z. A.

1995-11-01

The thermal conductivity and electrical resistivity of zirconium-1 wt% niobium samples were measured before and after the process of their oxidation in air. A special procedure was used to dissolve the gas and to smooth out its concentration in the alloy. The basic experiments were performed under high vacuum under steady-state temperature conditions. The temperature range was 300 1600 K. for the pure alloy and 300 1100 K for the samples containing oxygen. It was found that the thermal conductivity—oxygen concentration relation reverses its sign from negative at low and middle temperatures to positive at temperatures above 900 K. The relation between the electrical resistivity and the oxygen content does not show this feature. The Lorenz function was found to have an anomalous temperature dependence.

Annealing effect on the structural and dielectric properties of hematite nanoparticles

NASA Astrophysics Data System (ADS)

Kumar, Vijay; Chahal, Surjeet; Singh, Dharamvir; Kumar, Ashok; Kumar, Parmod; Asokan, K.

2018-05-01

In the present work, we have synthesized hematite (α-Fe2O3) nanoparticles by sol-gel method and sintered them at different temperatures (200 °C, 400 °C and 800 °C for six hours). The samples were then characterized using versatile characterization techniques such as X-ray diffraction (XRD), dielectric measurement and temperature dependent resistivity (RT) for their structural, dielectric and electrical properties. XRD measurements infer that intensity of peak increases with an increase in temperature resulting an increase in crystallite size. Temperature dependent resistivity also shows decrease in the resistivity of the samples. Furthermore, the dielectric measurements correspond to the increase in the dielectric constant. Based on these observations, it can be inferred that sintering temperature plays an important role in tailoring the various physical properties of hematite nanoparticles.

Thermoelectricity in Heterogeneous Nanofluidic Channels.

PubMed

Li, Long; Wang, Qinggong

2018-05-01

Ionic fluids are essential to energy conversion, water desalination, drug delivery, and lab-on-a-chip devices. Ionic transport in nanoscale confinements and complex physical fields still remain elusive. Here, a nanofluidic system is developed using nanochannels of heterogeneous surface properties to investigate transport properties of ions under different temperatures. Steady ionic currents are observed under symmetric temperature gradients, which is equivalent to generating electricity using waste heat (e.g., electronic chips and solar panels). The currents increase linearly with temperature gradient and nonlinearly with channel size. Contributions to ion motion from temperatures and channel properties are evaluated for this phenomenon. The findings provide insights into the study of confined ionic fluids in multiphysical fields, and suggest applications in thermal energy conversion, temperature sensors, and chip-level thermal management. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of temperature and electric field on order parameters in ferroelectric hexagonal manganites

NASA Astrophysics Data System (ADS)

Zhang, C. X.; Yang, K. L.; Jia, P.; Lin, H. L.; Li, C. F.; Lin, L.; Yan, Z. B.; Liu, J.-M.

2018-03-01

In Landau-Devonshire phase transition theory, the order parameter represents a unique property for a disorder-order transition at the critical temperature. Nevertheless, for a phase transition with more than one order parameter, such behaviors can be quite different and system-dependent in many cases. In this work, we investigate the temperature (T) and electric field (E) dependence of the two order parameters in improper ferroelectric hexagonal manganites, addressing the phase transition from the high-symmetry P63/mmc structure to the polar P63cm structure. It is revealed that the trimerization as the primary order parameter with two components: the trimerization amplitude Q and phase Φ, and the spontaneous polarization P emerging as the secondary order parameter exhibit quite different stability behaviors against various T and E. The critical exponents for the two parameters Q and P are 1/2 and 3/2, respectively. As temperature increases, the window for the electric field E enduring the trimerization state will shrink. An electric field will break the Z2 part of the Z2×Z3 symmetry. The present work may shed light on the complexity of the vortex-antivortex domain structure evolution near the phase transition temperature.

INVESTIGATION OF LEAKAGE CURRENT BEHAVIOR OF Pt/Bi0.975La0.025Fe0.975Ni0.025O3/Pt CAPACITOR MEASURED AT DIFFERENT TEMPERATURES

NASA Astrophysics Data System (ADS)

Dai, Xiu Hong; Zhao, Hong Dong; Zhang, Lei; Zhu, Hui Juan; Li, Xiao Hong; Zhao, Ya Jun; Guo, Jian Xin; Zhao, Qing Xun; Wang, Ying Long; Liu, Bao Ting; Ma, Lian Xi

2014-03-01

Polycrystalline Bi0.975La0.025Fe0.975Ni0.025O3 (BLFNO) film is fabricated on Pt/Ti/SiO2/Si(111) substrate by sol-gel method. It is found that the well-crystallized BLFNO film is polycrystalline, and the Pt/BLFNO/Pt capacitor possesses good ferroelectric properties with remnant polarization of 74 μC/cm2 at electric field of 833 kV/cm. Moreover, it is also found that the leakage current density of the Pt/BLFNO/Pt capacitor increases with the increase of measurement temperature ranging from 100 to 300 K. The leakage density of the Pt/BLFNO/Pt capacitor satisfies space-charge-limited conduction (SCLC) at higher electric field and shows little dependence on voltage polarity and temperature, but shows polarity and temperature dependence at lower applied electric field. With temperature increasing from 100 to 300 K at lower applied electric field, the most likely conduction mechanism is from Ohmic behavior to SCLC for positive biases, but no clear dominant mechanism for negative biases is shown.

Large magnetoelectric coupling in magnetically short-range ordered Bi₅Ti₃FeO₁₅ film.

PubMed

Zhao, Hongyang; Kimura, Hideo; Cheng, Zhenxiang; Osada, Minoru; Wang, Jianli; Wang, Xiaolin; Dou, Shixue; Liu, Yan; Yu, Jianding; Matsumoto, Takao; Tohei, Tetsuya; Shibata, Naoya; Ikuhara, Yuichi

2014-06-11

Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. However, single-phase materials with such cross-coupling properties at room temperature exist rarely in nature; new design of nano-engineered thin films with a strong magneto-electric coupling is a fundamental challenge. Here we demonstrate a robust room-temperature magneto-electric coupling in a bismuth-layer-structured ferroelectric Bi₅Ti₃FeO₁₅ with high ferroelectric Curie temperature of ~1000 K. Bi₅Ti₃FeO₁₅ thin films grown by pulsed laser deposition are single-phase layered perovskit with nearly (00l)-orientation. Room-temperature multiferroic behavior is demonstrated by a large modulation in magneto-polarization and magneto-dielectric responses. Local structural characterizations by transmission electron microscopy and Mössbauer spectroscopy reveal the existence of Fe-rich nanodomains, which cause a short-range magnetic ordering at ~620 K. In Bi₅Ti₃FeO₁₅ with a stable ferroelectric order, the spin canting of magnetic-ion-based nanodomains via the Dzyaloshinskii-Moriya interaction might yield a robust magneto-electric coupling of ~400 mV/Oe·cm even at room temperature.

Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majid, S. S., E-mail: suhailphy276@gmail.com; Rahman, F.; Shukla, D. K.

2015-06-24

We present here the structural and electrical properties of the thin films of V{sub 2}O{sub 3} (Vanadium sesquioxide) and V{sub 5}O{sub 9}. Both these oxide phases, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}, have beenachieved on (001) orientedSi substrate using the V{sub 2}O{sub 5} target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V{sub 2}O{sub 3} and V{sub 5}O{sub 9} phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulatormore » transitions (MIT) for both the films, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}.« less

Tuning conductivity in boron nanowire by edge geometry

NASA Astrophysics Data System (ADS)

Bhuyan, Prabal Dev; Gupta, Sanjeev K.; Sonvane, Yogesh; Gajjar, P. N.

2018-04-01

In present study, we have investigated electronic and temperature dependent transport properties of carbyne like linear chain and ribbon like zigzag structures of Boron (B) nanowire. The linear chain structure showed higher electric and thermal conductivity, as it is sp-hybridized, than its counterpart ribbon (R) structure. However the conductivity of ribbon structure increases with increases in width due to edge geometry effect. The ribbon (3R) structure showed high electric and thermal conductivity of 8.0×1019 1/Ω m s and 0.59×1015 W/ m K respectively. Interestingly we have observed that B linear chain showed higher thermal conductivity of 0.23×1015 W/ m K than its ribbon R and 2R structure above 600K. Because of high Seebeck co-efficient of boron chain and ribbon (R) structures at low temperature, they could find applications in thermoelectric sensors. Our results show that tuning conductivity property of boron nanowire could be of great interest in research for future electric connector in nanodevices.

Ion irradiation of AZO thin films for flexible electronics

NASA Astrophysics Data System (ADS)

Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana; Alberti, Alessandra; Mirabella, Salvatore; Ruffino, Francesco; Terrasi, Antonio

2017-02-01

Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30-350 keV, 3 × 1015-3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

Improving the Thermoelectric Properties of Polyaniline by Introducing Poly(3,4-ethylenedioxythiophene)

NASA Astrophysics Data System (ADS)

Wang, Xiao Yang; Liu, Cheng Yan; Miao, Lei; Gao, Jie; Chen, Yu

2016-03-01

By using the parent monomers, 3,4-ethylenedioxythiophene and aniline, a series of nanocomposites consisting of different mass ratios of polyaniline (PANI) to poly(3,4-ethylenedioxythiophene) (PEDOT) have been successfully prepared in hydrochloric acid solution through oxidative polymerization, then redoped with p-toluenesulfonic acid ( p-TSA). Firstly, PEDOT nanoparticles were fabricated via chemical oxidation polymerization in reverse (water-in-oil) microemulsions. Then, PANI-doped PEDOT nanoparticles were formed by oxidative polymerization of aniline to form PANI/PEDOT nanofibers. The resulting nanostructured components were characterized by scanning electron microscopy (SEM) and a series of spectroscopic methods. The presence of PEDOT increased the room-temperature electrical conductivity of the PANI/PEDOT nanocomposites by more than two orders of magnitude in comparison with the parent PANI. Moreover, the PANI/PEDOT nanocomposites showed better thermoelectric properties than PANI. Different concentrations of p-TSA also affected the electrical conductivity and Seebeck coefficient of the nanocomposites. With increasing temperature, both the electrical conductivity and Seebeck coefficient increased.

Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities.

PubMed

Lin, Yen-Fu; Chang, Chia-Hung; Hung, Tsu-Chang; Jian, Wen-Bin; Tsukagoshi, Kazuhito; Wu, Yue-Han; Chang, Li; Liu, Zhaoping; Fang, Jiye

2015-08-11

To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott's variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics.

Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities

PubMed Central

Lin, Yen-Fu; Chang, Chia-Hung; Hung, Tsu-Chang; Jian, Wen-Bin; Tsukagoshi, Kazuhito; Wu, Yue-Han; Chang, Li; Liu, Zhaoping; Fang, Jiye

2015-01-01

To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott’s variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics. PMID:26260674

Investigations on structural and multiferroic properties of artificially engineered lead zirconate titanate-cobalt iron oxide layered nanostructures

NASA Astrophysics Data System (ADS)

Ortega Achury, Nora Patricia

Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic, electric, and ferroelastic ordering, have drawn increasing interest due to their multi-functionality for a variety of device applications. Since, very rare single phase materials exist in nature this kind of properties, an intensive research activity is being pursued towards the development of new engineered materials with strong magneto-electric (ME) coupling. In the present investigation, we have fabricated polycrystalline and highly oriented PbZr0.53,Ti0.47O3--CoFe 2O4 (PZT/CFO) artificially multilayers (MLs) engineered nanostructures thin films which were grown on Pt/TiO2/SiO2/Si and La 0.5Sr0.5CoO3 (LSCO) coated (001) MgO substrates respectively, using the pulsed laser deposition technique. The effect of various PZT/CFO sandwich configurations having 3, 5, and 9 layers, while maintaining similar total PZT and CFO thickness, has been systematically investigated. The first part of this thesis is devoted to the analysis of structural and microstructure properties of the PZT/CFO MLs. X-ray diffraction (XRD) and micro Raman analysis revealed that PZT and CFO were in the perovskite and spinel phases respectively in the all layered nanostructure, without any intermediate phase. The TEM and STEM line scan of the ML thin films showed that the layered structure was maintained with little inter-diffusion near the interfaces at nano-metric scale without any impurity phase, however better interface was observed in highly oriented films. Second part of this dissertation was dedicated to study of the dielectric, impedance, modulus, and conductivity spectroscopies. These measurements were carried out over a wide range of temperatures (100 K to 600 K) and frequencies (100 Hz to 1 MHz) to investigate the grain and grain boundary effects on electrical properties of MLs. The temperature dependent dielectric and loss tangent illustrated step-like behavior and relaxation peaks near the step-up characteristic respectively. The Cole-Cole plots indicate that the most of the dielectric response came from the bulk (grains) MLs below 300 K, whereas grain boundaries and electrode-MLs effects prominent at elevated temperature. The dielectric loss relaxation peaks shifted to higher frequency side with increase in temperature, finally above 300 K, it went out experimental frequency window. Our Cole-Cole fitting of dielectric loss spectra indicated marked deviation from the ideal Debye type of relaxation which is more prominent at elevated temperature. Master modulus spectra support the observation from impedance spectra, it also indicate that the difference between C g and Cgb are higher compared to polycrystalline MLs indicating less effects of grain boundary in highly oriented MLs. We have explained these electrical properties of MLs by Maxwell-Wagner type contributions arising from the interfacial charge at the interface of the MLs structure. Three different types of frequency dependent conduction process were observed at elevated temperature (>300 K), which well fitted with the double power law, sigma(o) = sigma(0) + A 1on1 + A 2on2, it indicates conduction at: Low frequency (<1 kHz) may be due to long range ordering (frequency independent), mid frequency (<10 kHz) may be due to short range hopping, and high frequency (<1 MHz) due to the localized relaxation hopping mechanism. The last part of the thesis is devoted to the study of the multiferroic and magnetoelectric properties of the ML thin films. Both polycrystalline and highly oriented films showed well saturated ferroelectric and ferromagnetic hysteresis loops at room temperature. Temperature dependence of ferroelectric properties showed that polarization slowly decreases from 300 K to 200 K, with complete collapse of polarization at ˜ 100 K, but there was complete recovery of the polarization during heating, which was repeatable over many different experiments. At the same time, in the same temperature interval the remanent magnetization of the MLs showed slow enhancement in the magnitude till 200 K with three fold increase at 100 K compared to room temperature. This enhancement in remanent magnetization and decrease in remanent ferroelectric polarization on lowering the temperature indicate temperature dependent dynamic switching of ferroelectric polarization. Frequencies and temperatures dependence of the ferroelectric hysteresis loop showed weak frequency dependence for highly oriented MLs, while significant dependence was observed for polycrystalline MLs. The fatigue test showed almost 0-20% deterioration in polarization. The fatigue and strong temperature and frequency dependent magneto-electric coupling suggest the utility of MLs for Dynamic Magneto-Electric Random Access Memory (DMERAM) and magnetic field sensor devices.

Structural and electrochemical properties of nanostructured nickel silicides by reduction and silicification of high-surface-area nickel oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xiao; Zhang, Bingsen; Li, Chuang

Graphical abstract: Nanostructured nickel silicides have been synthesized by reduction and silification of high-surface-area nickel oxide, and exhibited remarkably like-noble metal property, lower electric resistivity, and ferromagnetism at room temperature. Highlights: Black-Right-Pointing-Pointer NiSi{sub x} have been prepared by reduction and silification of high-surface-area NiO. Black-Right-Pointing-Pointer The structure of nickel silicides changed with increasing reaction temperature. Black-Right-Pointing-Pointer Si doping into nickel changed the magnetic properties of metallic nickel. Black-Right-Pointing-Pointer NiSi{sub x} have remarkably lower electric resistivity and like-noble metal property. -- Abstract: Nanostructured nickel silicides have been prepared by reduction and silicification of high-surface-area nickel oxide (145 m{sup 2} g{sup -1})more » produced via precipitation. The prepared materials were characterized by nitrogen adsorption, X-ray diffraction, thermal analysis, FT-IR spectroscopy, scanning electron microscopy, transmission electron microscopy, magnetic and electrochemical measurements. The nickel silicide formation involves the following sequence: NiO (cubic) {yields} Ni (cubic) {yields} Ni{sub 2}Si (orthorhombic) {yields} NiSi (orthorhombic) {yields} NiSi{sub 2} (cubic), with particles growing from 13.7 to 21.3 nm. The nickel silicides are ferromagnetic at room temperature, and their saturation magnetization values change drastically with the increase of Si content. Nickel silicides have remarkably low electrical resistivity and noble metal-like properties because of a constriction of the Ni d band and an increase of the electronic density of states. The results suggest that such silicides are promising candidates as inexpensive yet functional materials for applications in electrochemistry as well as catalysis.« less

Discrete element weld model, phase 2

NASA Technical Reports Server (NTRS)

Prakash, C.; Samonds, M.; Singhal, A. K.

1987-01-01

A numerical method was developed for analyzing the tungsten inert gas (TIG) welding process. The phenomena being modeled include melting under the arc and the flow in the melt under the action of buoyancy, surface tension, and electromagnetic forces. The latter entails the calculation of the electric potential and the computation of electric current and magnetic field therefrom. Melting may occur at a single temperature or over a temperature range, and the electrical and thermal conductivities can be a function of temperature. Results of sample calculations are presented and discussed at length. A major research contribution has been the development of numerical methodology for the calculation of phase change problems in a fixed grid framework. The model has been implemented on CHAM's general purpose computer code PHOENICS. The inputs to the computer model include: geometric parameters, material properties, and weld process parameters.

Superionic phase transition in silver chalcogenide nanocrystals realizing optimized thermoelectric performance.

PubMed

Xiao, Chong; Xu, Jie; Li, Kun; Feng, Jun; Yang, Jinlong; Xie, Yi

2012-03-07

Thermoelectric has long been recognized as a potentially transformative energy conversion technology due to its ability to convert heat directly into electricity. However, how to optimize the three interdependent thermoelectric parameters (i.e., electrical conductivity σ, Seebeck coefficient S, and thermal conductivity κ) for improving thermoelectric properties is still challenging. Here, we put forward for the first time the semiconductor-superionic conductor phase transition as a new and effective way to selectively optimize the thermoelectric power factor based on the modulation of the electric transport property across the phase transition. Ultra low value of thermal conductivity was successfully retained over the whole investigated temperature range through the reduction of grain size. As a result, taking monodisperse Ag(2)Se nanocrystals for an example, the maximized ZT value can be achieved around the temperature of phase transition. Furthermore, along with the effective scattering of short-wavelength phonons by atomic defects created by alloying, the alloyed ternary silver chalcogenide compounds, monodisperse Ag(4)SeS nanocrystals, show better ZT value around phase transition temperature, which is cooperatively contributed by superionic phase transition and alloying at nanoscale. © 2012 American Chemical Society

Structural, dielectric and impedance characteristics of lanthanum-modified BiFeO3-PbTiO3 electronic system

NASA Astrophysics Data System (ADS)

Pradhan, S. K.; Das, S. N.; Bhuyan, S.; Behera, C.; Padhee, R.; Choudhary, R. N. P.

2016-06-01

A lanthanum-modified BiFeO3-PbTiO3 binary electronic system has been fabricated by a high-temperature solid-state reaction technique. The structural, dielectric and electrical properties of a single phase of multicomponent system are investigated to understand its ferroelectrics as well as relaxation behavior. The X-ray diffraction structural analysis substantiates the formation of a new stable phase of tetragonal system (with a large c/a ratio 1.23) without any trace of impurity phase. The electrical behavior of the processed material is characterized through impedance spectroscopy in a wide frequency range (1 kHz-1 MHz) over a temperature range of 25-500 °C. It is observed that the substitution of lanthanum-modified PbTiO3 (PT) into BiFeO3 (BFO) reveals enviable multiferroic property which is evident from the ME coefficient measurement and ferroelectric loop. It also reduces the electrical leakage current or tangent loss. The ac conductivity of the solid solution increases with increase in frequency in the low-temperature region. The impedance spectroscopy of the synthesized material reflects the dielectric relaxation of non-Debye type.

A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy

NASA Astrophysics Data System (ADS)

Dai, Mingzhi; Khan, Karim; Zhang, Shengnan; Jiang, Kemin; Zhang, Xingye; Wang, Weiliang; Liang, Lingyan; Cao, Hongtao; Wang, Pengjun; Wang, Peng; Miao, Lijing; Qin, Haiming; Jiang, Jun; Xue, Lixin; Chu, Junhao

2016-06-01

Sub-gap density of states (DOS) is a key parameter to impact the electrical characteristics of semiconductor materials-based transistors in integrated circuits. Previously, spectroscopy methodologies for DOS extractions include the static methods, temperature dependent spectroscopy and photonic spectroscopy. However, they might involve lots of assumptions, calculations, temperature or optical impacts into the intrinsic distribution of DOS along the bandgap of the materials. A direct and simpler method is developed to extract the DOS distribution from amorphous oxide-based thin-film transistors (TFTs) based on Dual gate pulse spectroscopy (GPS), introducing less extrinsic factors such as temperature and laborious numerical mathematical analysis than conventional methods. From this direct measurement, the sub-gap DOS distribution shows a peak value on the band-gap edge and in the order of 1017-1021/(cm3·eV), which is consistent with the previous results. The results could be described with the model involving both Gaussian and exponential components. This tool is useful as a diagnostics for the electrical properties of oxide materials and this study will benefit their modeling and improvement of the electrical properties and thus broaden their applications.

End-of-Life Optical Property Predictions of White Conductive Thermal Control Coatings through Analysis of On-Orbit and Ground Based Testing Data

NASA Technical Reports Server (NTRS)

Hasegawa, Mark; Freese, Scott; Kauder, Lon; Triolo, Jack

2011-01-01

New system requirements pertaining to thermal optical properties and coating electrical properties are commonly specified on non-low earth orbit missions. An increasing number of projects are specifying coatings with a surface resistivity of less than lE-9 ohm/square to mitigate electrostatic charge buildup events over a range of operational temperatures. There are a limited number of coatings that. meet these electrical property requirements while having flight derived optical properties in representative environments. Goddard Space Flight Center Code 546, Contamination and Thermal Coatings Group has recently explored the variety of electrically conductive white coatings available through domestic vendors to evaluate properties to meet project requirements in a geostationary orbit. The lack of significant flight data in representative environments required the careful selection of samples in ground based tests to establish end of life thermal properties. Attention must be given to the origin and pedigree of samples used on past on-orbit experiments to insure that the present formulations for the materials are similar and will react in similar manner.

Optical and electrical studies of cerium mixed oxides

NASA Astrophysics Data System (ADS)

Sherly, T. R.; Raveendran, R.

2014-10-01

The fast development in nanotechnology makes enthusiastic interest in developing nanomaterials having tailor made properties. Cerium mixed oxide materials have received great attention due to their UV absorption property, high reactivity, stability at high temperature, good electrical property etc and these materials find wide applications in solid oxide fuel cells, solar control films, cosmetics, display units, gas sensors etc. In this study cerium mixed oxide compounds were prepared by co-precipitation method. All the samples were doped with Zn (II) and Fe (II). Preliminary characterizations such as XRD, SEM / EDS, TEM were done. UV - Vis, Diffuse reflectance, PL, FT-IR, Raman and ac conductivity studies of the samples were performed.

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

NASA Astrophysics Data System (ADS)

Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

2012-09-01

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

Growth and characterization of single crystal rocksalt LaAs using LuAs barrier layers

NASA Astrophysics Data System (ADS)

Krivoy, E. M.; Rahimi, S.; Nair, H. P.; Salas, R.; Maddox, S. J.; Ironside, D. J.; Jiang, Y.; Dasika, V. D.; Ferrer, D. A.; Kelp, G.; Shvets, G.; Akinwande, D.; Bank, S. R.

2012-11-01

We demonstrate the growth of high-quality, single crystal, rocksalt LaAs on III-V substrates; employing thin well-behaved LuAs barriers layers at the III-V/LaAs interfaces to suppress nucleation of other LaAs phases, interfacial reactions between GaAs and LaAs, and polycrystalline LaAs growth. This method enables growth of single crystal epitaxial rocksalt LaAs with enhanced structural and electrical properties. Temperature-dependent resistivity and optical reflectivity measurements suggest that epitaxial LaAs is semimetallic, consistent with bandstructure calculations in literature. LaAs exhibits distinct electrical and optical properties, as compared with previously reported rare-earth arsenide materials, with a room-temperature resistivity of ˜459 μΩ-cm and an optical transmission window >50% between ˜3-5 μm.

Relation between the magnetization and the electrical properties of alloy GaSb-MnSb films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koplak, O. V.; Polyakov, A. A.; Davydov, A. B.

2015-06-15

The influence of the charge carrier concentration on the magnetic properties of GaSb-MnSb alloys is studied. The ferromagnetism of GaSb-MnSb films is caused by the presence of MnSb granules and manifests itself in both magnetometric measurements and the presence of an anisotropic magnetoresistance and the anomalous Hall effect. Electric conduction is executed by charge carriers (holes) in a GaSb matrix. The magnetization of clusters depends on stoichiometry and the concentration of Mn{sup 2+} and Mn{sup 3+} ions, which is specified by the film growth conditions. At high film growth temperatures, ferromagnetic clusters containing Mn{sup 2+} ions mainly form. At lowmore » growth temperatures, an antiferromagnetic phase containing Mn{sup 3+} ions forms.« less

Quantum Monte Carlo simulation of the ferroelectric or ferrielectric nanowire with core shell morphology

NASA Astrophysics Data System (ADS)

Feraoun, A.; Zaim, A.; Kerouad, M.

2016-09-01

By using the Quantum Monte Carlo simulation; the electric properties of a nanowire, consisting of a ferroelectric core of spin-1/2 surrounded by a ferroelectric shell of spin-1/2 with ferro- or anti-ferroelectric interfacial coupling have been studied within the framework of the Transverse Ising Model (TIM). We have examined the effects of the shell coupling Js, the interfacial coupling JInt, the transverse field Ω, and the temperature T on the hysteresis behavior and on the electric properties of the system. The remanent polarization and the coercive field as a function of the transverse field and the temperature are examined. A number of characteristic behavior have been found such as the appearance of triple hysteresis loops for appropriate values of the system parameters.

Studying Some of Electrical and Mechanical Properties for Kevlar Fiber Reinforced Epoxy

NASA Astrophysics Data System (ADS)

Rafeeq, Sewench N.; Hussein, Samah M.

2011-12-01

As ordinary known the ability of synthesizing electrical conducting polymer composites is possible but with poor mechanical properties, for the solution of this problem, we carried out this study in order to obtain that both properties. Three methods were applied for preparing the conductive polyaniline (PANI) composites using Kevlar fiber fabric as substrate for the deposition of the PANI at one time and the prepared composite (EP/Kevlar fiber) at others. The chemical oxidative method was adopted for polymerization of the aniline and simultaneously protonated of PANI with a hydrochloric acid at concentration (1M). Two kinds of oxidation agents (FeCl3.6H2O) and ((NH4)2S2O8) were used. The electrical measurements indicate the effect of each preparation method, kind of oxidant agent and the kind of mat erial which PANI deposited on the electrical results. The conductivity results showed that the prepared composites lie within semiconductors region. Temperature—dependence of electric conductivity results showed semiconductors and conductors behavior of this material within the applied temperature ranges. The mechan ical property (tensile strength) was studied. X-ray diffraction study showed the crystalline structure for EP/Kevlar fiber/PANI composites prepared by the three methods. These results gave optimism to the synthesis of conductive polymer composites with excellent mechanical properties..

Room temperature antiferroelectric-phase stability in BNT-BT lead-free ceramics

NASA Astrophysics Data System (ADS)

Guerra, J. D. S.; Peláiz-Barranco, A.; Calderón-Piñar, F.; Mendez-González, Y.

2017-11-01

In this work the electric field dependence of electrical polarization (hysteresis loop) has been investigated as a function of the frequency in the (Bi0.500Na0.500)0.920Ba0.065La0.010TiO3 ceramic system. Results, not previously reported in the current literature, revealed that the magnitude of the electric field, necessary to obtain true domain switching, is strongly dependent of the frequency of the applied electric field. The structural properties, studied from x-ray diffraction and Rietveld's refinement, showed the coexistence of both antiferroelectric (AFE) and ferroelectric (FE) phases at room temperature, confirming the major contribution for the AFE phase. A strong contribution of the AFE phase on the electric field dependence of the polarization has been also evaluated, even at higher frequencies, considering a non-power-law dependence for the coercive field.

Effects of Pretreatment on the Electronic Properties of Plasma Enhanced Chemical Vapor Deposition Hetero-Epitaxial Graphene Devices

NASA Astrophysics Data System (ADS)

Zhang, Lian-Chang; Shi, Zhi-Wen; Yang, Rong; Huang, Jian

2014-09-01

Quasi-monolayer graphene is successfully grown by the plasma enhanced chemical vapor deposition heteroepitaxial method we reported previously. To measure its electrical properties, the prepared graphene is fabricated into Hall ball shaped devices by the routine micro-fabrication method. However, impurity molecules adsorbed onto the graphene surface will impose considerable doping effects on the one-atom-thick film material. Our experiment demonstrates that pretreatment of the device by heat radiation baking and electrical annealing can dramatically influence the doping state of the graphene and consequently modify the electrical properties. While graphene in the as-fabricated device is highly p-doped, as confirmed by the position of the Dirac point at far more than +60 V, baking treatment at temperatures around 180°C can significantly lower the doping level and reduce the conductivity. The following electrical annealing is much more efficient to desorb the extrinsic molecules, as confirmed by the in situ measurement, and as a result, further modify the doping state and electrical properties of the graphene, causing a considerable drop of the conductivity and a shifting of Dirac point from beyond +60 V to 0 V.

Synthesis, microstructure and dielectric properties of zirconium doped barium titanate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Rohtash; School of Physical Sciences, Jawaharlal Nehru University, New Delhi; Asokan, K.

2016-05-23

We report on synthesis, microstructural and relaxor ferroelectric properties of Zirconium(Zr) doped Barium Titanate (BT) samples with general formula Ba(Ti{sub 1-x}Zr{sub x})O{sub 3} (x=0.20, 0.35). These lead-free ceramics were prepared by solid state reaction route. The phase transition behavior and temperature dependent dielectric properties and composition dependent ferroelectric properties were investigated. XRD analysis at room temperature confirms phase purity of the samples. SEM observations revealed retarded grain growth with increasing Zr mole fraction. Dielectric properties of BZT ceramics is influenced significantly by small addition of Zr mole fraction. With increasing Zr mole fraction, dielectric constant decreases while FWHM and frequencymore » dispersion increases. Polarization vs electric field hysteresis measurements reveal ferroelectric relaxor phase at room temperature. The advantages of such substitution maneuvering towards optimizing ferroelectric properties of BaTiO{sub 3} are discussed.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sağlam, M.; Güzeldir, B., E-mail: msaglam@atauni.edu.tr

Highlights: • The CuS thin film used at Cu/n-GaAs structure is grown by SILAR method. • There has been no report on ageing of characteristics of this junction in the literature. • The properties of Cu/CuS/n-GaAs/In structure are examined with different methods. • It has been shown that Cu/CuS/n-GaAs/In structure has a stable interface. - Abstract: The aim of this study is to explain effects of the ageing on the electrical properties of Cu/n-GaAs Shottky barrier diode with Copper Sulphide (CuS) interfacial layer. CuS thin films are deposited on n-type GaAs substrate by Successive Ionic Layer Adsorption and Reaction (SILAR)more » method at room temperature. The structural and the morphological properties of the films have been carried out by Scanning Electron Microscopy (SEM) and X-Ray Diffraction (XRD) techniques. The XRD analysis of as-grown films showed the single-phase covellite, with hexagonal crystal structure built around two preferred orientations corresponding to (102) and (108) atomic planes. The ageing effects on the electrical properties of Cu/CuS/n-GaAs/In structure have been investigated. The current–voltage (I–V) measurements at room temperature have been carried out to study the change in electrical characteristics of the devices as a function of ageing time. The main electrical parameters, such as ideality factor (n), barrier height (Φ{sub b}), series resistance (R{sub s}), leakage current (I{sub 0}), and interface states (N{sub ss}) for this structure have been calculated. The results show that the main electrical parameters of device remained virtually unchanged.« less

Characterization of the mechanical and physical properties of TD-NiCr (Ni-20Cr-2ThO2) alloy sheet

NASA Technical Reports Server (NTRS)

Fritz, L. J.; Koster, W. P.; Taylor, R. E.

1973-01-01

Sheets of TD-NiCr processed using techniques developed to produce uniform material were tested to supply mechanical and physical property data. Two heats each of 0.025 and 0.051 cm thick sheet were tested. Mechanical properties evaluated included tensile, modulus of elasticity, Poisson's Ratio, compression, creep-rupture, creep strength, bearing strength, shear strength, sharp notch and fatigue strength. Test temperatures covered the range from ambient to 1589K. Physical properties were also studied as a function of temperature. The physical properties measured were thermal conductivity, linear thermal expansion, specific heat, total hemispherical emittance, thermal diffusivity, and electrical conductivity.

Electroluminescence and transport properties in amorphous silicon nanostructures

NASA Astrophysics Data System (ADS)

Irrera, Alessia; Iacona, Fabio; Crupi, Isodiana; Presti, Calogero D.; Franzò, Giorgia; Bongiorno, Corrado; Sanfilippo, Delfo; Di Stefano, Gianfranco; Piana, Angelo; Fallica, Pier Giorgio; Canino, Andrea; Priolo, Francesco

2006-03-01

We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend as a function of temperature with a maximum at around 60 K. The efficiency of these devices is comparable to that found in devices based on Si nanocrystals, although amorphous nanostructures exhibit peculiar working conditions (very high current densities and low applied voltages). Time resolved EL measurements demonstrate the presence of a short lifetime, only partially due to the occurrence of non-radiative phenomena, since the very small amorphous clusters formed at 900 °C are characterized by a short radiative lifetime. By forcing a current through the device a phenomenon of charge trapping in the Si nanostructures has been observed. Trapped charges affect luminescence through an Auger-type non-radiative recombination of excitons. Indeed, it is shown that unbalanced injection of carriers (electrons versus holes) is one of the main processes limiting luminescence efficiency. These data will be reported and the advantages and limitations of this approach will be discussed.

A Comprehensive Study on Dielectric Properties of Volcanic Rock/PANI Composites

NASA Astrophysics Data System (ADS)

Kiliç, M.; Karabul, Y.; Okutan, M.; İçelli, O.

2016-05-01

Basalt is a very well-known volcanic rock that is dark colored and relatively rich in iron and magnesium, almost located each country in the world. These rocks have been used in the refused rock industry, to produce building tiles, construction industrial, highway engineering. Powders and fibers of basalt rocks are widely used of radiation shielding, thermal stability, heat and sound insulation. This study examined three different basalt samples (coded CM-1, KYZ-13 and KYZ-24) collected from different regions of Van province in Turkey. Polyaniline (PANI) is one of the representative conductive polymers due to its fine environmental stability, huge electrical conductivity, as well as a comparatively low cost. Also, the electrical and thermal properties of polymer composites containing PANI have been widely studied. The dielectric properties of Basalt/Polyaniline composites in different concentrations (10, 25, 50 wt.% PANI) have been investigated by dielectric spectroscopy method at the room temperature. The dielectric parameters (dielectric constants, loss and strength) were measured in the frequency range of 102 Hz-106 Hz at room temperature. The electrical mechanism change with PANI dopant. A detailed dielectrically analysis of these composites will be presented.

Ce Core-Level Spectroscopy, and Magnetic and Electrical Transport Properties of Lightly Ce-Doped YCoO3

NASA Astrophysics Data System (ADS)

Kobayashi, Yoshihiko; Koike, Tsuyoshi; Okawa, Mario; Takayanagi, Ryohei; Takei, Shohei; Minohara, Makoto; Kobayashi, Masaki; Horiba, Koji; Kumigashira, Hiroshi; Yasui, Akira; Ikenaga, Eiji; Saitoh, Tomohiko; Asai, Kichizo

2016-11-01

We have investigated the Ce and Co core level spectroscopy, and the magnetic and electrical transport properties of lightly Ce-doped YCoO3. We have successfully synthesized single-phase Y1-xCexCoO3 for 0.0 ≤ x ≤ 0.1 by the sol-gel method. Hard X-ray photoelectron and X-ray absorption spectroscopy experiments reveal that the introduced Ce ions are tetravalent, which is considered to be the first case of electron doping into bulk trivalent Co oxides with perovskite RECoO3 (RE: rare-earth element or Y) caused by RE site substitution. The magnitude of the effective magnetic moment peff obtained from the temperature dependence of magnetic susceptibility χ(T) at higher temperatures is close to that for high-spin Co2+ introduced by the Ce doping, implying that the electrons doped into the Co site induce Co2+ with a high-spin state. For x = 0.1, ferromagnetic ordering is observed below about 7 K. Electrical transport properties such as resistivity and thermoelectric power show that negative electron-like carriers are introduced by Ce substitution.

Temperature dependent electrical properties of rare-earth metal Er Schottky contact on p-type InP

NASA Astrophysics Data System (ADS)

Rao, L. Dasaradha; Reddy, N. Ramesha; Kumar, A. Ashok; Reddy, V. Rajagopal

2013-06-01

The current-voltage (I-V) characteristics of the Er/p-InP Schottky barrier diodes (SBDs) have been investigated in the temperature range of 300-400K in steps of 25K. The electrical parameters such as ideality factor (n) and zero-bias barrier height (Φbo) are found to be strongly temperature dependent. It is observed that ΦI-V decreases whereas n increases with decreasing temperature. The series resistance is also calculated from the forward I-V characteristics of Er/p-InP SBD and it is found to be strongly dependent on temperature. Further, the temperature dependence of energy distribution of interface state density (NSS) profiles is determined from the forward I-V measurements by taking into account the bias dependence of the effective barrier height and ideality factor. It is observed that the NSS values increase with a decrease in temperature.

Effects of radial electric fields on linear ITG instabilities in W7-X and LHD

NASA Astrophysics Data System (ADS)

Riemann, J.; Kleiber, R.; Borchardt, M.

2016-07-01

The impact of radial electric fields on the properties of linear ion-temperature-gradient (ITG) modes in stellarators is studied. Numerical simulations have been carried out with the global particle-in-cell (PIC) code EUTERPE, modelling the behaviour of ITG modes in Wendelstein 7-X and an LHD-like configuration. In general, radial electric fields seem to lead to a reduction of ITG instability growth, which can be related to the action of an induced E× B -drift. Focus is set on the modification of mode properties (frequencies, power spectrum, spatial structure and localization) to understand the observed growth rates as the result of competing stabilizing mechanisms.

Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes

NASA Astrophysics Data System (ADS)

Pathak, C. S.; Garg, Manjari; Singh, J. P.; Singh, R.

2018-05-01

The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0–4.4 and 0.50–0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.

Electrical and thermal transport in doped barium plumbate

NASA Astrophysics Data System (ADS)

Eufrasio, Andreza; Pegg, Ian; Dutta, Biprodas

Thermoelectric (TE) power is generated by utilizing a temperature differential created across a material. Such energy conversion takes place without the incorporation of any moving part and can often lead to substantial recovery of waste heat into useful electrical energy. Ceramic oxides have gained attention as a new class of TE materials because of their high stability at elevated temperatures, where higher conversion efficiencies are expected. The present investigation uses Barium plumbate (BaPbO3) as the starting material, the TE properties of which have been altered by reasonable cation substitutions. As BaPbO3 has high electrical conductivity, σ 1.1x105Ω-1 m-1at room temperature, its thermopower, S, is relatively low 21 μV/K. With a thermal conductivity, k, of 3.00W/m.K, the figure of merit (ZT =S2 σ Tk-1) of BaPbO3\\ is 0.01 at T = 300 K. BaPbO3\\ is a prospective TE material because it exhibits high electrical conductivity like metals. However, it exhibits remarkably low thermal conductivity, which renders it attractive TE qualities. The open perovskite structure of BaPbO3\\ allows it to accommodate a large variety of dopants in relatively large concentrations. This work investigates the variation of TE properties of BaPbO3\\ as Ba ions are systematically substituted by other cations.

Low-Temperature Thermoelectric Properties of Fe2VAl with Partial Cobalt Doping

NASA Astrophysics Data System (ADS)

Liu, Chang; Morelli, Donald T.

2012-06-01

Ternary metallic alloy Fe2VAl with a pseudogap in its energy band structure has received intensive scrutiny for potential thermoelectric applications. Due to the sharp change in the density of states profile near the Fermi level, interesting transport properties can be triggered to render possible enhancement in the overall thermoelectric performance. Previously, this full-Heusler-type alloy was partially doped with cobalt at the iron sites to produce a series of compounds with n-type conductivity. Their thermoelectric properties in the temperature range of 300 K to 850 K were reported. In this research, efforts were made to extend the investigation on (Fe1- x Co x )2VAl to the low-temperature range. Alloy samples were prepared by arc-melting and annealing. Seebeck coefficient, electrical resistivity, and thermal conductivity measurements were performed from 80 K to room temperature. The effects of cobalt doping on the material's electronic and thermal properties are discussed.

Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.

2003-01-01

Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

Electrical Properties of Bismuth/Lithium-Cosubstituted Strontium Titanate Ceramics

NASA Astrophysics Data System (ADS)

Alkathy, Mahmoud. S.; James Raju, K. C.

2018-03-01

Sr(1-x)(Bi,Li) x TiO3 compound was prepared via a solid-state reaction route with microwave heating of the starting materials. X-ray diffraction analysis revealed pure perovskite phase without formation of any secondary phases. The electrical conductivity was studied as a function of temperature and frequency. The experimental results indicate that the alternating-current (AC) conductivity increased with frequency, following the Jonscher power law. To interpret the possible mechanism for electrical conduction, the correlated barrier hopping model was applied. The effect of temperature and the Bi/Li concentration on the electrical resistivity was studied. The results showed that the electrical resistivity decreased with increasing temperature, which could be due to increased thermal energy of electrons. Also, the electrical resistivity decreased with increase in the amount of Bi and Li, which could be due to increased concentration of structural defects, which could increase the number of either electrons or holes available for conduction. A single semicircular arc corresponding to a single relaxation process was observed for all the investigated ceramics, suggesting a grain contribution to the total resistance in these materials. Arrhenius plots were used to obtain the activation energy for the samples.

Electrical Properties of Bismuth/Lithium-Cosubstituted Strontium Titanate Ceramics

NASA Astrophysics Data System (ADS)

Alkathy, Mahmoud. S.; James Raju, K. C.

2018-07-01

Sr(1- x)(Bi,Li) x TiO3 compound was prepared via a solid-state reaction route with microwave heating of the starting materials. X-ray diffraction analysis revealed pure perovskite phase without formation of any secondary phases. The electrical conductivity was studied as a function of temperature and frequency. The experimental results indicate that the alternating-current (AC) conductivity increased with frequency, following the Jonscher power law. To interpret the possible mechanism for electrical conduction, the correlated barrier hopping model was applied. The effect of temperature and the Bi/Li concentration on the electrical resistivity was studied. The results showed that the electrical resistivity decreased with increasing temperature, which could be due to increased thermal energy of electrons. Also, the electrical resistivity decreased with increase in the amount of Bi and Li, which could be due to increased concentration of structural defects, which could increase the number of either electrons or holes available for conduction. A single semicircular arc corresponding to a single relaxation process was observed for all the investigated ceramics, suggesting a grain contribution to the total resistance in these materials. Arrhenius plots were used to obtain the activation energy for the samples.

Structural, electrical, optical and magneto-electric characteristics of chemically synthesized CaCu3Ti4O12 dielectric ceramics

NASA Astrophysics Data System (ADS)

Parida, Kalpana; Choudhary, R. N. P.

2017-07-01

CaCu3Ti4O12 (CCTO) was prepared by a chemical reaction method. The pellets prepared from the calcined powder of the material were sintered at 1100 °C. Analysis of x-ray diffraction pattern, recorded on CCTO powder, confirms the phase formation of CCTO. Studies of dielectric (ɛ r, tanδ) and impedance parameters using dielectric and impedance spectroscopy of the compound have provided information about the electrical properties and the dielectric relaxation mechanism of the material. Detailed studies on the variation of electrical conductivity (dc) with temperature show semi-conducting nature of the material. Study of frequency (of applied electric field) dependence of ac conductivity at different temperatures suggests that the compound follows the Jonscher’s power law. Complex impedance spectroscopic analysis suggests that the semicircles formed in the Nyquist plot are connected to the grains, grain boundary and interface effects. An optical energy band gap of ~1.9 eV is obtained from the UV-visible absorbance spectrum. The magnetic data related to magneto-electric (ME) coefficient, measured by varying dc bias magnetic field, have been obtained at room temperature.

Electrical and magnetic properties of conductive Cu-based coated conductors

NASA Astrophysics Data System (ADS)

Aytug, T.; Paranthaman, M.; Thompson, J. R.; Goyal, A.; Rutter, N.; Zhai, H. Y.; Gapud, A. A.; Ijaduola, A. O.; Christen, D. K.

2003-11-01

The development of YBa2Cu3O7-δ (YBCO)-based coated conductors for electric power applications will require electrical and thermal stabilization of the high-temperature superconducting (HTS) coating. In addition, nonmagnetic tape substrates are an important factor in order to reduce the ferromagnetic hysteresis energy loss in ac applications. We report progress toward a conductive buffer layer architecture on biaxially textured nonmagnetic Cu tapes to electrically couple the HTS layer to the underlying metal substrate. A protective Ni overlayer, followed by a single buffer layer of La0.7Sr0.3MnO3, was employed to avoid Cu diffusion and to improve oxidation resistance of the substrate. Property characterizations of YBCO films on short prototype samples revealed self-field critical current density (Jc) values exceeding 2×106 A/cm2 at 77 K and good electrical connectivity. Magnetic hysteretic loss due to Ni overlayer was also investigated.

Effects of poling over the orthorhombic-tetragonal phase transition temperature in compositionally homogeneous (K,Na)NbO3-based ceramics

NASA Astrophysics Data System (ADS)

Morozov, M. I.; Kungl, H.; Hoffmann, M. J.

2011-03-01

Li-, Ta-, and Mn-modified (K,Na)NbO3 ceramics with various compositional homogeneity have been prepared by conventional and precursor methods. The homogeneous ceramic has demonstrated a sharper peak in temperature dependent piezoelectric response. The dielectric and piezoelectric properties of the homogeneous ceramics have been characterized at the experimental subcoercive electric fields near the temperature of the orthorhombic-tetragonal phase transition with respect to poling in both phases. Poling in the tetragonal phase is shown to enhance the low-signal dielectric and piezoelectric properties in the orthorhombic phase.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Electrical, dielectric and surface wetting properties of multi-walled carbon nanotubes/nylon-6 nanocomposites

NASA Astrophysics Data System (ADS)

Long, Yun-Ze; Li, Meng-Meng; Sui, Wan-Mei; Kong, Qing-Shan; Zhang, Lei

2009-03-01

This paper reports that the multi-walled carbon nanotubes (MWCNT)/nylon-6 (PA6) nanocomposites with different MWCNT loadings have been prepared by a simple melt-compounding method. The electrical, dielectric, and surface wetting properties of the CNT/PA6 composites have been studied. The temperature dependence of the conductivity of the CNT/PA6 composite with 10.0 wt% CNT loading (σRT ~ 10-4 S/cm) are measured, and afterwards a charge-energy-limited tunnelling model (ln σ(T) ~ T-1/2) is found. With increasing CNT weight percentage from 0.0 to 10.0 wt%, the dielectric constant of the CNT/PA6 composites enhances and the dielectric loss tangent increases two orders of magnitude. In addition, water contact angles of the CNT/PA6 composites increase and the composites with CNT loading larger than 2.0 wt% even become hydrophobic. The obtained results indicate that the electrical and surface properties of the composites have been significantly enhanced by the embedded carbon nanotubes.

Characterization of the Hole Transport and Electrical Properties in the Small-Molecule Organic Semiconductors

NASA Astrophysics Data System (ADS)

Wang, L. G.; Zhu, J. J.; Liu, X. L.; Cheng, L. F.

2017-10-01

In this paper, we investigate the hole transport and electrical properties in a small-molecule organic material N, N'-bis(1-naphthyl)- N, N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB), which is frequently used in organic light-emitting diodes. It is shown that the thickness-dependent current density versus voltage ( J- V) characteristics of sandwich-type NPB-based hole-only devices cannot be described well using the conventional mobility model without carrier density or electric field dependence. However, a consistent and excellent description of the thickness-dependent and temperature-dependent J- V characteristics of NPB hole-only devices can be obtained with a single set of parameters by using our recently introduced improved model that take into account the temperature, carrier density, and electric field dependence of the mobility. For the small-molecule organic semiconductor studied, we find that the width of the Gaussian distribution of density of states σ and the lattice constant a are similar to the values reported for conjugated polymers. Furthermore, we show that the boundary carrier density has an important effect on the J- V characteristics. Both the maximum of carrier density and the minimum of electric field appear near the interface of NPB hole-only devices.

Thermoelectric properties of pressure-sintered Si(0.8)Ge(0.2) thermoelectric alloys

NASA Technical Reports Server (NTRS)

Vining, Cronin B.; Laskow, William; Hanson, Jack O.; Van Der Beck, Roland R.; Gorsuch, Paul D.

1991-01-01

The thermoelectric properties of 28 sintered Si(0.8)Ge(0.2) alloys, heavily doped with either B or P and prepared from powders with median particle sizes ranging from about 1 to over 100 microns, have been determined from 300 to 1300 K. The thermal conductivity decreases with decreasing particle size; however, the figure of merit is not significantly increased due to a compensating reduction in the electrical conductivity. The thermoelectric figure of merit is in good agreement with results of Dismukes et al. (1964) on similarly doped alloys prepared by zone-leveling techniques. The electrical and thermal conductivity are found to be sensitive to preparation procedure while the Seebeck coefficient and figure of merit are much less sensitive. The high-temperature electrical properties are consistent with charge carrier scattering by acoustic or optical phonons.

Structural and transport properties of Yb substituted YBaCo4O7

NASA Astrophysics Data System (ADS)

Singh, Bharat; Kumar, Naresh; Gaur, N. K.; Rayaprol, S.

2012-06-01

We investigate a series of compounds of the type, Y1-xYbxBaCo4O7, to study the effect of chemical pressure on the structural and electrical transport properties of a geometrically frustrated cobaltite, YBaCo4O7. Rietveld analysis of XRD data were carried out for all the samples studied. The four probe resistivity measurements were carried out to understand the transport mechanism in these compounds at temperatures below room temperatures. These results are presented and discussed in the context of ongoing efforts in studying geometrically frustrated magnetic compounds with novel physical properties.

High temperature metal hydrides as heat storage materials for solar and related applications.

PubMed

Felderhoff, Michael; Bogdanović, Borislav

2009-01-01

For the continuous production of electricity with solar heat power plants the storage of heat at a temperature level around 400 degrees C is essential. High temperature metal hydrides offer high heat storage capacities around this temperature. Based on Mg-compounds, these hydrides are in principle low-cost materials with excellent cycling stability. Relevant properties of these hydrides and their possible applications as heat storage materials are described.

Adjusting alloy compositions for selected properties in temperature limited heaters

DOEpatents

Brady; Michael Patrick , Horton, Jr.; Joseph Arno , Vitek; John Michael

2010-03-23

Heaters for treating a subsurface formation are described herein. Such heaters can be obtained by using the systems and methods described herein. The heater includes a heater section including iron, cobalt, and carbon. The heater section has a Curie temperature less than a phase transformation temperature. The Curie temperature is at least 740.degree. C. The heater section provides, when time varying current is applied to the heater section, an electrical resistance.

High Temperature Metal Hydrides as Heat Storage Materials for Solar and Related Applications

PubMed Central

Felderhoff, Michael; Bogdanović, Borislav

2009-01-01

For the continuous production of electricity with solar heat power plants the storage of heat at a temperature level around 400 °C is essential. High temperature metal hydrides offer high heat storage capacities around this temperature. Based on Mg-compounds, these hydrides are in principle low-cost materials with excellent cycling stability. Relevant properties of these hydrides and their possible applications as heat storage materials are described. PMID:19333448

Configuration and Calibration of High Temperature Furnaces for Testing Ceramic Matrix Composites

DTIC Science & Technology

2014-10-01

Actual Furnace Cavity Stainless Steel Mesh Cage For Electrical Connections (both sides) High Temperature Power Lead Clamp Furnace Control TC’s Power... tests generate the basic properties such as modulus (E), ultimate tensile strength (UTS), proportional limit (PL), strain at failure (f), as well as...stress- strain behavior. Each material was tested at room temperature, at the maximum use temperature for the CMC system (as determined by the CMC

Characterization of polybenzimidazole (PBI) film at high temperatures

NASA Astrophysics Data System (ADS)

Hammoud, Ahmad N.; Suthar, J. L.

1992-04-01

Polybenzimidazole, a linear thermoplastic polymer with excellent thermal stability and strength retention over a wide range of temperatures, was evaluated for its potential use as the main dielectric in high temperature capacitors. The film was characterized in terms of its dielectric properties in a frequency range of 50 Hz to 100 kilo-Hz. These properties, which include the dielectric constant and dielectric loss, were also obtained in a temperature range from 20 C to 300 C with an electrical stress of 60 Hz, 50 V/mil present. The alternating and direct current breakdown voltages of silicone oil impregnated films as a function of temperature were also determined. The results obtained indicate that while the film remained relatively stable up to 200 C, it exhibited an increase in its dielectric properties as the temperature was raised to 300 C. It was also found that conditioning of the film by heat treatment at 60 C for six hours tended to improve its dielectric and breakdown properties. The results are discussed and conclusions made concerning the suitability of the film as a high temperature capacitor dielectric.

Characterization of polybenzimidazole (PBI) film at high temperatures

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad N.; Suthar, J. L.

1992-01-01

Polybenzimidazole, a linear thermoplastic polymer with excellent thermal stability and strength retention over a wide range of temperatures, was evaluated for its potential use as the main dielectric in high temperature capacitors. The film was characterized in terms of its dielectric properties in a frequency range of 50 Hz to 100 kilo-Hz. These properties, which include the dielectric constant and dielectric loss, were also obtained in a temperature range from 20 C to 300 C with an electrical stress of 60 Hz, 50 V/mil present. The alternating and direct current breakdown voltages of silicone oil impregnated films as a function of temperature were also determined. The results obtained indicate that while the film remained relatively stable up to 200 C, it exhibited an increase in its dielectric properties as the temperature was raised to 300 C. It was also found that conditioning of the film by heat treatment at 60 C for six hours tended to improve its dielectric and breakdown properties. The results are discussed and conclusions made concerning the suitability of the film as a high temperature capacitor dielectric.

Impact of pulse thermal processing on the properties of inkjet printed metal and flexible sensors

DOE PAGES

Joshi, Pooran C.; Kuruganti, Teja; Killough, Stephen M.

2015-03-11

In this paper, we report on the low temperature processing of environmental sensors employing pulse thermal processing (PTP) technique to define a path toward flexible sensor technology on plastic, paper, and fabric substrates. Inkjet printing and pulse thermal processing technique were used to realize mask-less, additive integration of low-cost sensors on polymeric substrates with specific focus on temperature, humidity, and strain sensors. The printed metal line performance was evaluated in terms of the electrical conductivity characteristics as a function of post-deposition thermal processing conditions. The PTP processed Ag metal lines exhibited high conductivity with metal sheet resistance values below 100more » mΩ/{whitesquare} using a pulse width as short as 250 μs. The flexible temperature and relative humidity sensors were defined on flexible polyimide substrates by direct printing of Ag metal structures. The printed resistive temperature sensor and capacitive humidity sensor were characterized for their sensitivity with focus on future smart-building applications. Strain gauges were printed on polyimide substrate to determine the mechanical properties of the silver nanoparticle films. Finally, the observed electrical properties of the printed metal lines and the sensitivity of the flexible sensors show promise for the realization of a high performance print-on-demand technology exploiting low thermal-budget PTP technique.« less

Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis.

PubMed

Hartner, Sonja; Ali, Moazzam; Schulz, Christof; Winterer, Markus; Wiggers, Hartmut

2009-11-04

Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

Electrical properties of thermoelectric cobalt Ca3Co4O9 epitaxial heterostructures

NASA Astrophysics Data System (ADS)

Guo, Haizhong; Wang, Shufang; Wang, Le; Jin, Kui-juan; Chen, Shanshan; Fu, Guangsheng; Ge, Chen; Lu, Huibin; Wang, Can; He, Meng; Yang, Guozhen

2013-03-01

Heterostructures fabricated from layered cobalt oxides offer substantial advantages for thermoelectric applications. C-axis-oriented Ca3Co4O9 (CCO) thin films on SrTiO3 substrates and Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunctions were fabricated by pulsed laser deposition. The measurements of in-plane resistivity, thermopower, and magnetic properties performed on the Ca3Co4O9 thin films were found to be comparable to ab-plane those of the single crystals due to good orientation of the films. The temperature dependence of the electrical transport properties of Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunction was also investigated. The junction shows two distinctive transport mechanisms at different temperature regimes under forward bias: tunneling across the Schottky barrier in the temperature range of 100-380 K, and tunneling mechanism at low bias and thermal emission mechanism at high bias between 10 and 100 K. However, for the case of low reverse bias, the trap assisted tunneling process should be considered for the leakage current. Negative magnetoresistance effect is observed at low temperatures, related to the electron spin-dependent scattering and the interface resistance of the heterostructures.

Optical and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films

NASA Astrophysics Data System (ADS)

Gao, Y. Q.; Huang, Z. M.; Hou, Y.; Wu, J.; Chu, J. H.

2013-12-01

Mn1.56Co0.96Ni0.48O4 (MCN) films with different layers have been prepared on Al2O3 substrate by chemical solution deposition method. The microstructures, optical and electrical properties of the films are investigated. X-ray diffraction and microstructure analyses show good crystallization and both the crystalline quality and the grain size are improved with the increasing thickness of the films. Mid-infrared optical properties of MCN films have been investigated using transmission spectra. The results show the red shift of absorption with the increasing film thickness and the energy gap Eg decrease from 0.6422 eV to 0.6354 eV. All the MCN films show an exponential decrease in the resistivity with increasing temperature within the measured range. The temperature dependence resistivity can be described by the small polarons hopping model. Using this model, the characteristic temperature T0 and activation energy E of the MCN films were derived. With the film thickness increase, the T0 and E of the MCN films increase. The calculated room temperature coefficient of resistance (TCR) of MCN film with 100 layers is -3.5% K-1. The MCN films showed appropriate resistance and high value of TCR, these advantages make them very preponderant for thermal sensors.

Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thinmore » films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Utilization of low temperatures in electrical machines

NASA Astrophysics Data System (ADS)

Kwasniewska-Jankowicz, L.; Mirski, Z.

1983-09-01

The dimensions of conventional and superconducting direct and alternating current generators are compared and the advantages of using superconducting magnets are examined. The critical temperature, critical current, and critical magnetic field intensity of superconductors in an induction winding are discussed as well as the mechanical properties needed for bending connectors at small radii. Investigations of cryogenic cooling, cryostats, thermal insulation and rotary seals are reported as well as results of studies of the mechanical properties of austenitic Cr-Ni steels, welded joints and plastics for insulation.

Optical, Electrical, and Crystal Properties of TiO2 Thin Films Grown by Atomic Layer Deposition on Silicon and Glass Substrates

NASA Astrophysics Data System (ADS)

Kupa, I.; Unal, Y.; Cetin, S. S.; Durna, L.; Topalli, K.; Okyay, A. K.; Ates, H.

2018-05-01

TiO2 thin films have been deposited on glass and Si(100) by atomic layer deposition (ALD) technique using tetrakis(diethylamido)titanium(IV) and water vapor as reactants. Thorough investigation of the properties of the TiO2/glass and TiO2/Si thin films was carried out, varying the deposition temperature in the range from 100°C to 250°C while keeping the number of reaction cycles fixed at 1000. Physical and material property analyses were performed to investigate optical and electrical properties, composition, structure, and morphology. TiO2 films grown by ALD may represent promising materials for future applications in optoelectronic devices.

Diffusion in liquid metal systems. [information on electrical resistivity and thermal conductivity

NASA Technical Reports Server (NTRS)

Ukanwa, A. O.

1975-01-01

Physical properties of twenty liquid metals are reported; some of the data on such liquid metal properties as density, electrical resistivity, thermal conductivity, and heat capacity are summarized in graphical form. Data on laboratory handling and safety procedure are summarized for each metal; heat-transfer-correlations for liquid metals under various conditions of laminar and turbulent flow are included. Where sufficient data were available, temperature equations of properties were obtained by the method of least-squares fit. All values of properties given are valid in the given liquid phase ranges only. Additional tabular data on some 40 metals are reported in the appendix. Included is a brief description of experiments that were performed to investigate diffusion in liquid indium-gallium systems.

Sensing Properties of a Novel Temperature Sensor Based on Field Assisted Thermal Emission.

PubMed

Pan, Zhigang; Zhang, Yong; Cheng, Zhenzhen; Tong, Jiaming; Chen, Qiyu; Zhang, Jianpeng; Zhang, Jiaxiang; Li, Xin; Li, Yunjia

2017-02-27

The existing temperature sensors using carbon nanotubes (CNTs) are limited by low sensitivity, complicated processes, or dependence on microscopy to observe the experimental results. Here we report the fabrication and successful testing of an ionization temperature sensor featuring non-self-sustaining discharge. The sharp tips of nanotubes generate high electric fields at relatively low voltages, lowering the work function of electrons emitted by CNTs, and thereby enabling the safe operation of such sensors. Due to the temperature effect on the electron emission of CNTs, the collecting current exhibited an exponential increase with temperature rising from 20 °C to 100 °C. Additionally, a higher temperature coefficient of 0.04 K -1 was obtained at 24 V voltage applied on the extracting electrode, higher than the values of other reported CNT-based temperature sensors. The triple-electrode ionization temperature sensor is easy to fabricate and converts the temperature change directly into an electrical signal. It shows a high temperature coefficient and good application potential.

Sensing Properties of a Novel Temperature Sensor Based on Field Assisted Thermal Emission

PubMed Central

Pan, Zhigang; Zhang, Yong; Cheng, Zhenzhen; Tong, Jiaming; Chen, Qiyu; Zhang, Jianpeng; Zhang, Jiaxiang; Li, Xin; Li, Yunjia

2017-01-01

The existing temperature sensors using carbon nanotubes (CNTs) are limited by low sensitivity, complicated processes, or dependence on microscopy to observe the experimental results. Here we report the fabrication and successful testing of an ionization temperature sensor featuring non-self-sustaining discharge. The sharp tips of nanotubes generate high electric fields at relatively low voltages, lowering the work function of electrons emitted by CNTs, and thereby enabling the safe operation of such sensors. Due to the temperature effect on the electron emission of CNTs, the collecting current exhibited an exponential increase with temperature rising from 20 °C to 100 °C. Additionally, a higher temperature coefficient of 0.04 K−1 was obtained at 24 V voltage applied on the extracting electrode, higher than the values of other reported CNT-based temperature sensors. The triple-electrode ionization temperature sensor is easy to fabricate and converts the temperature change directly into an electrical signal. It shows a high temperature coefficient and good application potential. PMID:28264427

Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

NASA Astrophysics Data System (ADS)

Yusuf, Mohammed; Du, Xu; Dawber, Matthew

2013-03-01

Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

Barium strontium titanate thin film growth with variation of lanthanum dopant compatibility as sensor prototype in the satellite technology

NASA Astrophysics Data System (ADS)

Mulyadi; Wahyuni, Rika; Hardhienata, Hendradi; Irzaman

2018-05-01

Electrical properties of barium strontium titanate thin films were investigated. Three layers of barium strontium titanate thin films have been prepared by chemical solution deposition method and spin coating technique at 8000 rpm rotational speed for 30 seconds and temperature of annealing at 850°C for eight hours with temperature increment of 1.67°C/minute. Materials produced by the process of lanthanum dopant with doping variations of 2%, 4% and 6% above type-p silicon (100) substrates. Film obtained was then carried out the characterization using USB 2000 VIS-NIR and tauc plot method. As a result, the barium strontium titanate thin film has the value of band gap energy of 1.58 eV, 1.92 eV and 2.24 eV respectively. The characterization of electrical properties shows that the band gap value of barium strontium titanate thin film with lanthanum dopant was in the range of semiconductor value. Barium strontium titanate thin films with lanthanum dopant are sensitive to temperature changes, so it potentially to be applied to temperature monitoring on satellite technology.

Terahertz detectors from Be-doped low-temperature grown InGaAs/InAlAs: Interplay of annealing and terahertz performance

NASA Astrophysics Data System (ADS)

Globisch, B.; Dietz, R. J. B.; Nellen, S.; Göbel, T.; Schell, M.

2016-12-01

The influence of post-growth annealing on the electrical properties, the transient carrier dynamics and the performance as THz photoconductive receiver of Beryllium (Be) doped InGaAs/InAlAs multilayer heterostructures grown at 130 °C in a molecular beam epitaxy (MBE) system was investigated. We studied samples with nominally Be doping concentrations of 8 ×10 17 cm-3 - 1.2 ×1019 cm3 annealed for 15 min. - 120 min. at temperatures between 500 °C - 600 °C. In contrast to previous publications, the results show consistently that annealing increases the electron lifetime of the material. In analogy to the annealing properties of low-temperature grown (LTG) GaAs we explain our findings by the precipitation of arsenic antisite defects. The knowledge of the influence of annealing on the material properties allowed for the fabrication of broadband THz photoconductive receivers with an electron lifetime below 300 fs and varying electrical properties. We found that the noise of the detected THz pulse trace in time-domain spectroscopy (TDS) was directly determined by the resistance of the photoconductive receiver and the peak-to-peak amplitude of the THz pulse correlated with the electron mobility.

Heat Transfer Modeling of an Annular On-Line Spray Water Cooling Process for Electric-Resistance-Welded Steel Pipe

PubMed Central

Chen, Zejun; Han, Huiquan; Ren, Wei; Huang, Guangjie

2015-01-01

On-line spray water cooling (OSWC) of electric-resistance-welded (ERW) steel pipes can replace the conventional off-line heat treatment process and become an important and critical procedure. The OSWC process improves production efficiency, decreases costs, and enhances the mechanical properties of ERW steel pipe, especially the impact properties of the weld joint. In this paper, an annular OSWC process is investigated based on an experimental simulation platform that can obtain precise real-time measurements of the temperature of the pipe, the water pressure and flux, etc. The effects of the modes of annular spray water cooling and related cooling parameters on the mechanical properties of the pipe are investigated. The temperature evolutions of the inner and outer walls of the pipe are measured during the spray water cooling process, and the uniformity of mechanical properties along the circumferential and longitudinal directions is investigated. A heat transfer coefficient model of spray water cooling is developed based on measured temperature data in conjunction with simulation using the finite element method. Industrial tests prove the validity of the heat transfer model of a steel pipe undergoing spray water cooling. The research results can provide a basis for the industrial application of the OSWC process in the production of ERW steel pipes. PMID:26201073

Heat Transfer Modeling of an Annular On-Line Spray Water Cooling Process for Electric-Resistance-Welded Steel Pipe.

PubMed

Chen, Zejun; Han, Huiquan; Ren, Wei; Huang, Guangjie

2015-01-01

On-line spray water cooling (OSWC) of electric-resistance-welded (ERW) steel pipes can replace the conventional off-line heat treatment process and become an important and critical procedure. The OSWC process improves production efficiency, decreases costs, and enhances the mechanical properties of ERW steel pipe, especially the impact properties of the weld joint. In this paper, an annular OSWC process is investigated based on an experimental simulation platform that can obtain precise real-time measurements of the temperature of the pipe, the water pressure and flux, etc. The effects of the modes of annular spray water cooling and related cooling parameters on the mechanical properties of the pipe are investigated. The temperature evolutions of the inner and outer walls of the pipe are measured during the spray water cooling process, and the uniformity of mechanical properties along the circumferential and longitudinal directions is investigated. A heat transfer coefficient model of spray water cooling is developed based on measured temperature data in conjunction with simulation using the finite element method. Industrial tests prove the validity of the heat transfer model of a steel pipe undergoing spray water cooling. The research results can provide a basis for the industrial application of the OSWC process in the production of ERW steel pipes.

Dielectric and electrical studies of Pr{sup 3+} doped nano CaSiO{sub 3} perovskite ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulkarni, Sandhya, E-mail: pappu.sandhyakulkarni@gmail.com; Nagabhushana, B.M.; Parvatikar, Narsimha

2014-02-01

Highlights: • CaSiO{sub 3}:Pr{sup 3+} was prepared by facile low temperature solution combustion method. • The crystalline phase of the product is obtained by adopting sintering method. • Samples prepared at 500 °C and calcined at 900 °C for 3 h showed β-phase. • The Pr{sup 3+} doped CaSiO{sub 3} shows “unusual results”. • The electrical microstructure has been accepted to be of internal barrier layer capacitor. - Abstract: CaSiO{sub 3} nano-ceramic powder doped with Pr{sup 3+} has been prepared by solution combustion method. The powder Ca{sub 0.95}Pr{sub 0.05}SiO{sub 3} is investigated for its dielectric and electrical properties at roommore » temperature to study the effect of doping. The sample is characterized by X-ray diffraction and infrared spectroscopy. The size of either of volume elements of CaSiO{sub 3}:Pr{sup 3+} estimated from transmission electron microscopy is about 180–200 nm. The sample shows colossal dielectric response at room temperature. This colossal dielectric behaviour follows Debye-type relaxation and can be explained by Maxwell–Wagner (MW) polarization. However, analysis of impedance and electric modulus data using Cole–Cole plot shows that it deviates from ideal Debye behaviour resulting from the distribution of relaxation times. The distribution in the relaxation times may be attributed to existence of electrically heterogeneous grains, insulating grain boundary, and electrode contact regions. Doping, thus, results in substantial modifications in the dielectric and electrical properties of the nano-ceramic CaSiO{sub 3}.« less

Evolution of mechanical properties of ultrafine grained 1050 alloy annealing with electric current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Yiheng; He, Lizi, E-mail: helizi@epm.neu.edu.cn; Zhang, Lin

2016-03-15

The tensile properties and microstructures of 1050 aluminum alloy prepared by equal channel angular pressing at cryogenic temperature (cryoECAP) after electric current annealing at 90–210 °C for 3 h were investigated by tensile test, electron back scattering diffraction (EBSD) and transmission electron microscopy (TEM). An unexpected annealing-induced strengthening phenomenon occurs at 90–210 °C, due to a significant decrease in the density of mobile dislocations after annealing, and thus a higher yield stress is required to nucleate alternative dislocation sources during tensile test. The electric current can enhance the motion of dislocations, lead to a lower dislocation density at 90–150 °C,more » and thus shift the peak annealing temperature from 150 °C to 120 °C. Moreover, the electric current can promote the migration of grain boundaries at 150–210 °C, result in a larger grain size at 150 °C and 210 °C, and thus causes a lower yield stress. The sample annealed with electric current has a lower uniform elongation at 90–120 °C, and the deviation in the uniform elongation between samples annealed without and with electric current becomes smaller at 150–210 °C. - Highlights: • An unexpected annealing-induced strengthening phenomenon occurs at 90–210 °C. • The d. c. current can enhance the motion of dislocations at 90–150 °C, and thus shift the peak annealing temperature from 150 °C to 120 °C. • The d. c. current can promote the grain growth at 150–210 °C, and thus cause a lower yield stress. • The DC annealed sample has a lower uniform elongation at 90–120 °C.« less

Material processing of oil palm empty fruit bunches for use as raw material of conductive carbon paper

NASA Astrophysics Data System (ADS)

Destyorini, F.; Indayaningsih, N.

2017-04-01

Empty fruit bunches of oil palm is a by-product of the palm oil industry that contains a high element of carbon. This by-product can be processed into a conductive carbon paper that could be applied as fuel cell electrodes. Carbon paper for this application must be conductive, porous, and hydrophobic. Utilization of oil palm empty fruit bunches begins with the carbonization process at a temperature of 500°C that produced charcoal. It is followed by heating at temperature of 900°C and 1300°C. To obtain the carbon paper, powdered charcoal with polymer binder (PEG and EVA) were mixed in solvent and molded using tape casting method. This process successfully produced carbon paper with dimensions of ±(20x20) cm2 and a thickness of 0.1-0.3 mm. Properties of carbon paper were characterized and analyzed in terms of electrical conductivity, porosity, hydrophobic property, and microstructure. Polytetrafluoroethylene (PTFE), a hydrophobic agent, was treated on carbon paper to enhance the hydrophobicity of the carbon paper. PTFE coating on the surface of the carbon paper could change their physical properties. Carbon paper shows excellent properties in terms of porosity and hydrophobicity. Whereas, its electrical property needs to be improved further by increasing the pyrolysis temperature. But overall, this might show a potential GDL material for PEMFC.

The Effect of Particles on Electrolytically Polymerized Thin Natural MCF Rubber for Soft Sensors Installed in Artificial Skin.

PubMed

Shimada, Kunio; Mochizuki, Osamu; Kubota, Yoshihiro

2017-04-19

The aim of this study is to investigate the effect of particles as filler in soft rubber sensors installed in artificial skin. We examine sensors made of natural rubber (NR-latex) that include magnetic particles of Ni and Fe₃O₄ using magnetic compound fluid (MCF). The 1-mm thickness of the electrolytically polymerized MCF rubber makes production of comparatively thin rubber sensors feasible. We first investigate the effect of magnetic particles Ni and Fe₃O₄ on the curing of MCF rubber. Next, in order to adjust the electric properties of the MCF rubber, we adopt Al₂O₃ dielectric particles. We investigate the effect of Al₂O₃ particles on changes in electric current, voltage and temperature of electrolytically polymerized MCF rubber liquid, and on the electric properties under the application of normal and shear forces. By adjusting the ratio of Ni, Fe₃O₄, Al₂O₃ and water in MCF rubber with Al₂O₃, it is possible to change the electric properties.

Influence of Oxygen Partial Pressure during Processing on the Thermoelectric Properties of Aerosol-Deposited CuFeO₂.

PubMed

Stöcker, Thomas; Exner, Jörg; Schubert, Michael; Streibl, Maximilian; Moos, Ralf

2016-03-24

In the field of thermoelectric energy conversion, oxide materials show promising potential due to their good stability in oxidizing environments. Hence, the influence of oxygen partial pressure during synthesis on the thermoelectric properties of Cu-Delafossites at high temperatures was investigated in this study. For these purposes, CuFeO₂ powders were synthetized using a conventional mixed-oxide technique. X-ray diffraction (XRD) studies were conducted to determine the crystal structures of the delafossites associated with the oxygen content during the synthesis. Out of these powders, films with a thickness of about 25 µm were prepared by the relatively new aerosol-deposition (AD) coating technique. It is based on a room temperature impact consolidation process (RTIC) to deposit dense solid films of ceramic materials on various substrates without using a high-temperature step during the coating process. On these dense CuFeO₂ films deposited on alumina substrates with electrode structures, the Seebeck coefficient and the electrical conductivity were measured as a function of temperature and oxygen partial pressure. We compared the thermoelectric properties of both standard processed and aerosol deposited CuFeO₂ up to 900 °C and investigated the influence of oxygen partial pressure on the electrical conductivity, on the Seebeck coefficient and on the high temperature stability of CuFeO₂. These studies may not only help to improve the thermoelectric material in the high-temperature case, but may also serve as an initial basis to establish a defect chemical model.

Structural, Dielectric, and Electrical Properties of Bi1- x Pb x Fe1- x (Zr0.5Ti0.5) x O3

NASA Astrophysics Data System (ADS)

Panda, Niranjan; Pattanayak, Samita; Choudhary, R. N. P.

2015-12-01

Polycrystalline samples of Bi1- x Pb x Fe1- x (Zr0.5Ti0.5) x O3 (BPFZTO) with x = 0.0, 0.2, 0.3, and 0.4 were prepared by high-temperature solid-state reaction. Preliminary structural analysis of calcined powders of the materials by use of x-ray powder diffraction confirmed formation of single-phase systems with the tetragonal structure. Room-temperature scanning electron micrographs of the samples revealed uniform distribution of grains of low porosity and different dimensions on the surface of the samples. The frequency-temperature dependence of dielectric and electric properties was studied by use of dielectric and complex impedance spectroscopy over a wide range of frequency (1 kHz to 1 MHz) at different temperatures (25-500°C). The dielectric constant of BiFeO3 (BFO) was enhanced by substitution with Pb(Zr0.5Ti0.5)O3 (PZT) whereas the dielectric loss of the BPFZTO compounds decreased with increasing PZT content. A significant contribution of both grains and grain boundaries to the electrical response of the materials was observed. The frequency-dependence of the ac conductivity of BPFZTO followed Jonscher's power law. Negative temperature coefficient of resistance behavior was observed for all the BPFZTO samples. Conductivity by thermally excited charge carriers and oxygen vacancies in the materials was believed to be of the Arrhenius-type.

Structural, magnetic and electrical properties of a new double-perovskite LaNaMnMoO6 material.

PubMed

Borchani, Sameh Megdiche; Koubaa, Wissem Cheikh-Rouhou; Megdiche, Makrem

2017-11-01

Structural, magnetic, magnetocaloric, electrical and magnetoresistance properties of an LaNaMnMoO 6 powder sample have been investigated by X-ray diffraction (XRD), magnetic and electrical measurements. Our sample has been synthesized using the ceramic method. Rietveld refinements of the XRD patterns show that our sample is single phase and it crystallizes in the orthorhombic structure with Pnma space group. Magnetization versus temperature in a magnetic applied field of 0.05 T shows that our sample exhibits a paramagnetic-ferromagnetic transition with decreasing temperature. The Curie temperature T C is found to be 320 K. Arrott plots show that all our double-perovskite oxides exhibit a second-order magnetic phase transition. From the measured magnetization data of an LaNaMnMoO 6 sample as a function of the magnetic applied field, the associated magnetic entropy change |-ΔSM| and the relative cooling power (RCP) have been determined. In the vicinity of T C , |-ΔSM| reached, in a magnetic applied field of 8 T, a maximum value of ∼4 J kg -1  K -1 . Our sample undergoes a large magnetocaloric effect at near-room temperature. Resistivity measurements reveal the presence of an insulating-metal transition at Tρ = 180 K. A magnetoresistance of 30% has been observed at room temperature for 6 T, significantly larger than that reported for the A 2 FeMoO 6 (A = Sr, Ba) double-perovskite system.

Electric Conduction in Semiconductors: A Pedagogical Model Based on the Monte Carlo Method

ERIC Educational Resources Information Center

Capizzo, M. C.; Sperandeo-Mineo, R. M.; Zarcone, M.

2008-01-01

We present a pedagogic approach aimed at modelling electric conduction in semiconductors in order to describe and explain some macroscopic properties, such as the characteristic behaviour of resistance as a function of temperature. A simple model of the band structure is adopted for the generation of electron-hole pairs as well as for the carrier…

Optimization and improvement of thermal energy harvesting by using pyroelectric materials

NASA Astrophysics Data System (ADS)

El Fatnani, Fatima Zahra; Guyomar, Daniel; Mazroui, M.'hammed; Belhora, Fouad; Boughaleb, Yahia

2016-06-01

We deal with the thermal energy which is one of the ambient energy sources surely exploitable, but it has not been much interest as the mechanical energy. In this paper, our aim is to use thermal energy and show that it's an important source for producing the electrical energy through pyroelectric effect which is the property of some dielectric materials to show a spontaneous electrical polarization versus temperature. In this context, we present a concept to harvest a thermal energy using infrared rays and pyroelectric effect. The pyroelectric material used in this work can generate an electrical voltage when it subjected to a temperature change which will be ensured by the use of infrared lamp. Our experimental results show that the electrical voltage, current and harvested power increased significantly when increasing the area of the pyroelectric element. The experimental results show also that with this simple concept we harvested a heavy amount value of power which will certainly be useful in an extensive range of applications, including sensors and infrared detection. These results shed light on the thermoelectric energy conversion by Ceramic lead zirconate titanate (PZT) buzzer having the pyroelectric property.

Evaluation of GeO desorption behavior in the metalGeO(2)Ge structure and its improvement of the electrical characteristics.

PubMed

Oniki, Yusuke; Koumo, Hideo; Iwazaki, Yoshitaka; Ueno, Tomo

2010-06-15

The relation between germanium monoxide (GeO) desorption and either improvement or deterioration in electrical characteristics of metalGeO(2)Ge capacitors fabricated by thermal oxidation has been investigated. In the metalGeO(2)Ge stack, two processes of GeO desorption at different sites and at different temperatures were observed by thermal desorption spectroscopy measurements. The electrical characteristics of as-oxidized metalGeO(2)Ge capacitors shows a large flat-band voltage shift and minority carrier generation due to the GeO desorption from the GeO(2)Ge interface during oxidation of Ge substrates. On the other hand, the electrical properties were drastically improved by a postmetallization annealing at low temperature resulting in a metal catalyzed GeO desorption from the top interface.

Giant crystal-electric-field effect and complex magnetic behavior in single-crystalline CeRh3Si2

NASA Astrophysics Data System (ADS)

Pikul, A. P.; Kaczorowski, D.; Gajek, Z.; Stȩpień-Damm, J.; Ślebarski, A.; Werwiński, M.; Szajek, A.

2010-05-01

Single-crystalline CeRh3Si2 was investigated by means of x-ray diffraction, magnetic susceptibility, magnetization, electrical resistivity, and specific-heat measurements carried out in wide temperature and magnetic field ranges. Moreover, the electronic structure of the compound was studied at room temperature by cerium core-level x-ray photoemission spectroscopy (XPS). The physical properties were analyzed in terms of crystalline electric field and compared with results of ab initio band-structure calculations performed within the density-functional theory approach. The compound was found to crystallize in the orthorhombic unit cell of the ErRh3Si2 type (space group Imma No.74, Pearson symbol: oI24 ) with the lattice parameters a=7.1330(14)Å , b=9.7340(19)Å , and c=5.6040(11)Å . Analysis of the magnetic and XPS data revealed the presence of well-localized magnetic moments of trivalent cerium ions. All the physical properties were found to be highly anisotropic over the whole temperature range studied and influenced by exceptionally strong crystalline electric field with the overall splitting of the 4f1 ground multiplet exceeding 5700 K. Antiferromagnetic order of the cerium magnetic moments at TN=4.70(1)K and their subsequent spin rearrangement at Tt=4.48(1)K manifest themselves as distinct anomalies in the temperature characteristic of all the physical properties investigated and exhibit complex evolution in an external magnetic field. A tentative magnetic B-T phase diagram, constructed for B parallel to the b axis being the easy magnetization direction, shows very complex magnetic behavior of CeRh3Si2 , similar to that recently reported for an isostructural compound CeIr3Si2 . The electronic band-structure calculations corroborated the antiferromagnetic ordering of the cerium magnetic moments and well-reproduced the experimental XPS valence-band spectrum.

Electrical Switching of Perovskite Thin-Film Resistors

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Juan; Ignatiev, Alex

2010-01-01

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

NASA Astrophysics Data System (ADS)

Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

2016-05-01

The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

Structure evolution and thermoelectric properties of carbonized polydopamine thin films

DOE PAGES

Li, Haoqi; Aulin, Yaroslav V.; Frazer, Laszlo; ...

2017-02-13

Carbonization of nature-inspired polydopamine can yield thin films with high electrical conductivity. Understanding of the structure of carbonized PDA (cPDA) is therefore highly desired. In this study, neutron diffraction, Raman spectroscopy, and other techniques indicate that cPDA samples are mainly amorphous with some short-range ordering and graphite-like structure that emerges with increasing heat treatment temperature. The electrical conductivity and the Seebeck coefficient show different trends with heat treatment temperature, while the thermal conductivity remains insensitive. Finally, the largest room-temperature ZT of 2 × 10 –4 was obtained on samples heat-treated at 800 °C, which is higher than that of reducedmore » graphene oxide.« less

Electrical properties of Ba(Dy{sub 1/2}Nb{sub 1/2})O{sub 3} ceramic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nath, K. Amar, E-mail: karn190@gmail.com; Chandra, K. P., E-mail: kpchandra23@gmail.com; Dubey, K., E-mail: kirandubey45@yahoo.com

2016-05-06

Polycrystalline Ba(Dy{sub 1/2}Nb{sub 1/2})O{sub 3} was prepared using a high-temperature solid-state reaction method. X-ray diffraction analysis indicated the formation of a single-phase cubic structure having space group Pm3m. AC impedance plots as a function of frequency at different temperatures were used to analyse the electrical behaviour of the sample, which indicated the negative temperature coefficient of resistance character. Complex impedance analysis targeted non-Debye type dielectric relaxation. Frequency dependent ac conductivity data obeyed Jonscher’s power law. The apparent activation energy was estimated to be 0.97 eV at 1 kHz.

Auger electron spectroscopy study of oxidation of a PdCr alloy used for high-temperature sensors

NASA Technical Reports Server (NTRS)

Boyd, Darwin L.; Zeller, Mary V.; Vargas-Aburto, Carlos

1993-01-01

A Pd-13 wt. percent Cr solid solution is a promising high-temperature strain gage alloy. In bulk form it has a number of properties that are desirable in a resistance strain gage material, such as a linear electrical resistance versus temperature curve to 1000 C and stable electrical resistance in air at 1000 C. However, unprotected fine wire gages fabricated from this alloy perform well only to 600 C. At higher temperatures severe oxidation degrades their electrical performance. In this work Auger electron spectroscopy was used to study the oxidation chemistry of the alloy wires and ribbons. Results indicate that the oxidation is caused by a complex mechanism that is not yet fully understood. As expected, during oxidation, a layer of chromium oxide is formed. This layer, however, forms beneath a layer of metallic palladium. The results of this study have increased the understanding of the oxidation mechanism of Pd-13 wt. percent Cr.

i-anvils : in situ measurements of pressure, temperature and conductivity in diamond anvil cells

NASA Astrophysics Data System (ADS)

Munsch, P.; Bureau, H.; Kubsky, S.; Meijer, J.; Datchi, F.; Ninet, S.; Estève, I.

2011-12-01

The precise determination of the pressure and temperature conditions during diamond anvils cells (DAC) experiments is of primary importance. Such determinations are critical more especially for the fields corresponding to "low pressures" (<4 GPa) and moderate temperature (600-1500°C). Determining the electrical properties of mantle minerals is also a condition to understand the physics of the Deep Earth. This has to be done in situ at pressures and temperatures relevant for the interior of the Earth. i-anvils allow in situ pressure (P) and temperature (T) measurements in experiments using a DAC. Boron and carbon micro-structures are implanted in the diamond anvil lattice a few micrometers below the surface, the sensors are located a few μm below the center of the diamond culet (sample chamber position). When conductive electrodes are implanted at the position of the sample chamber on the culet of the anvil, instead of P,T sensors, they allow in situ measurements of electrical properties of the loaded sample at high P,T conditions in a DAC. The principle consists of applying an electrical potential across the structures through external contacts placed on the slopes of the anvil. The resistivity of these structures is sensitive to pressure and temperature applied in the sample chamber. The electrical transport properties of the sample can be measured the same way when electrodes have been implanted on the culet. Here we will present our last progresses, more especially using the focus ion beam (FIB) technology to perform contacts and electrodes. Progresses about the i-anvils connexions with the electronic devices will also be shown. We will present the last P and T sensors calibrations. Furnaces are also introduced through Boron implantation into the anvils, allowing the possibility to reach intermediate temperatures between externally heated DAC (up to 1100°C) and laser heated DAC (from 1500°C to a few thousands). Preliminary tests and the interest of such devices will be discussed at the meeting. A new diamond anvil cell has been especially designed for this purpose. This DAC allows in situ spectroscopies and X-Ray characterisation of geological fluids in their equilibrium conditions in the crust and in the upper mantle. Preliminary results will be presented.

Investigation of conduction and relaxation phenomena in BaZrxTi1-xO3 (x=0.05) by impedance spectroscopy

NASA Astrophysics Data System (ADS)

Mahajan, Sandeep; Haridas, Divya; Ali, S. T.; Munirathnam, N. R.; Sreenivas, K.; Thakur, O. P.; Prakash, Chandra

2014-10-01

In present study we have prepared ferroelectric BaZrxTi1-xO3 (x=0.05) ceramic by conventional solid state reaction route and studied its electrical properties as a function of temperature and frequency. X-ray diffraction (XRD) analysis shows single-phase formation of the compound with orthorhombic crystal structure at room temperature. Impedance and electric modulus spectroscopy analysis in the frequency range of 40 Hz-1 MHz at high temperature (200-600 °C) suggests two relaxation processes with different time constant are involved which are attributed to bulk and grain boundary effects. Frequency dependent dielectric plot at different temperature shows normal variation with frequency while dielectric loss (tanδ) peak was found to obey an Arrhenius law with activation energy of 1.02 eV. The frequency-dependent AC conductivity data were also analyzed in a wide temperature range. In present work we have studied the role of grain and grain boundaries on the electrical behaviour of Zr-doped BaTiO3 and their dependence on temperature and frequency by complex impedance and modulus spectroscopy (CIS) technique in a wide frequency (40 Hz-1 MHz) and high temperature range.

Crystal Structure and Transport Properties of Oxygen-Deficient Perovskite Sr 0.9Y 0.1CoO 3-δ

DOE PAGES

Yang, Tianrang; Mattick, Victoria F.; Chen, Yan; ...

2018-01-29

The present work reports a systematic study on temperature-dependent local crystal structure, oxygen stoichiometry, and electrical/electrochemical properties of an oxygen-deficient Sr 0.9Y 0.1CoO 3-δ (SYC10) perovskite using variable-temperature neutron diffraction (VTND), thermal gravimetric analysis, and electrical/electrochemical methods, respectively. The VTND reveals that the crystal symmetry of SYC10 remains P4/mmm tetragonal up to 900 °C. The tetragonal symmetry reflects the net effects of temperature and oxygen stoichiometry on crystal symmetry. The observed p-type electronic conductivity behavior originates from the charge-ordering between the two distinctive Co-sites. The partial oxide-ion conductivity and diffusivity obtained from oxygen permeation measurements are 2.3 × 10 –2more » S cm –1 and 7.98 × 10–8 cm 2/s at 800 °C in air, respectively. The electrochemical oxygen reduction reaction kinetics of the SYC10 cathode is primarily limited by the charge-transfer process at low temperatures (600–650 °C) and oxide-ion migration from the cathode into the electrolyte at high temperatures (700–800 °C).« less

Consideration of the effects of intense tissue heating on the RF electromagnetic fields during MRI: simulations for MRgFUS in the hip

NASA Astrophysics Data System (ADS)

Xuegang Xin, Sherman; Gu, Shiyong; Carluccio, Giuseppe; Collins, Christopher M.

2015-01-01

Due to the strong dependence of tissue electrical properties on temperature, it is important to consider the potential effects of intense tissue heating on the RF electromagnetic fields during MRI, as can occur in MR-guided focused ultrasound surgery. In principle, changes of the RF electromagnetic fields could affect both efficacy of RF pulses, and the MRI-induced RF heating (SAR) pattern. In this study, the equilibrium temperature distribution in a whole-body model with 2 mm resolution before and during intense tissue heating up to 60 °C at the target region was calculated. Temperature-dependent electric properties of tissues were assigned to the model to establish a temperature-dependent electromagnetic whole-body model in a 3T MRI system. The results showed maximum changes in conductivity, permittivity, ≤ft|\\mathbf{B}1+\\right|, and SAR of about 25%, 6%, 2%, and 20%, respectively. Though the B1 field and SAR distributions are both temperature-dependent, the potential harm to patients due to higher SARs is expected to be minimal and the effects on the B1 field distribution should have minimal effect on images from basic MRI sequences.