Silicon Carbide Sensors and Electronics for Harsh Environment Applications

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2007-01-01

Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Limits of applicability of a two-temperature model under nonuniform heating of metal by an ultrashort laser pulse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polyakov, D S; Yakovlev, E B

The heating of metals (silver and aluminium) by ultrashort laser pulses is analysed proceeding from a spatially nonuniform kinetic equation for the electron distribution function. The electron subsystem thermalisation is estimated in a wide range of absorbed pulse energy density. The limits of applicability are determined for the two-temperature model. (interaction of laser radiation with matter)

Assessment of SOI Devices and Circuits at Extreme Temperatures

NASA Technical Reports Server (NTRS)

Elbuluk, Malik; Hammoud, Ahmad; Patterson, Richard L.

2007-01-01

Electronics designed for use in future NASA space exploration missions are expected to encounter extreme temperatures and wide thermal swings. Such missions include planetary surface exploration, bases, rovers, landers, orbiters, and satellites. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of mission. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical devices, circuits, and systems suitable for applications in deep space exploration missions and aerospace environment. Silicon-On-Insulator (SOI) technology has been under active consideration in the electronics industry for many years due to the advantages that it can provide in integrated circuit (IC) chips and computer processors. Faster switching, less power, radiationtolerance, reduced leakage, and high temp-erature capability are some of the benefits that are offered by using SOI-based devices. A few SOI circuits are available commercially. However, there is a noticeable interest in SOI technology for different applications. Very little data, however, exist on the performance of such circuits under cryogenic temperatures. In this work, the performance of SOI integrated circuits, evaluated under low temperature and thermal cycling, are reported. In particular, three examples of SOI circuits that have been tested for operation at low at temperatures are given. These circuits are SOI operational amplifiers, timers and power MOSFET drivers. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these circuits for use in space exploration missions at cryogenic temperatures. The findings are useful to mission planners and circuit designers so that proper selection of electronic parts can be made, and risk assessment can be established for such circuits for use in space missions.

Electronic Components and Systems for Cryogenic Space Applications

NASA Technical Reports Server (NTRS)

Patterson, R. L.; Hammoud, A.; Dickman, J. E.; Gerber, S.; Elbuluk, M. E.; Overton, E.

2001-01-01

Electronic components and systems capable of operation at cryogenic temperatures are anticipated in many future NASA space missions such as deep space probes and planetary surface exploration. For example, an unheated interplanetary probe launched to explore the rings of Saturn would reach an average temperature near Saturn of about - 183 C. In addition to surviving the deep space harsh environment, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing payload development and launch costs. Terrestrial applications where components and systems must operate in low temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation system, and arctic exploration. An on-going research and development program at the NASA Glenn Research Center focuses on the development of reliable electronic devices and efficient power systems capable of surviving in low temperature environments. An overview of the program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained from in-house component testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

History and modern applications of nano-composite materials carrying GA/cm2 current density due to a Bose-Einstein Condensate at room temperature produced by Focused Electron Beam Induced Processing for many extraordinary novel technical applications

NASA Astrophysics Data System (ADS)

Koops, Hans W. P.

2015-12-01

The discovery of Focused Electron Beam Induced Processing and early applications of this technology led to the possible use of a novel nanogranular material “Koops-GranMat®” using Pt/C and Au/C material. which carries at room temperature a current density > 50 times the current density which high TC superconductors can carry. The explanation for the characteristics of this novel material is given. This fact allows producing novel products for many applications using Dual Beam system having a gas supply and X.Y.T stream data programming and not using GDSII layout pattern control software. Novel products are possible for energy transportation. -distribution.-switching, photon-detection above 65 meV energy for very efficient energy harvesting, for bright field emission electron sources used for vacuum electronic devices like amplifiers for HF electronics, micro-tubes, 30 GHz to 6 THz switching amplifiers with signal to noise ratio >10(!), THz power sources up to 1 Watt, in combination with miniaturized vacuum pumps, vacuum gauges, IR to THz detectors, EUV- and X-Ray sources. Since focusing electron beam induced deposition works also at low energy, selfcloning multibeam-production machines for field emitter lamps, displays, multi-beam - lithography, - imaging, and - inspection, energy harvesting, and power distribution with switches controlling field-emitter arrays for KA of currents but with < 100 V switching voltage are possible. Finally the replacement of HTC superconductors and its applications by the Koops-GranMat® having Koops-Pairs at room temperature will allow the investigation devices similar to Josephson Junctions and its applications now called QUIDART (Quantum interference devices at Room Temperature). All these possibilities will support a revolution in the optical, electric, power, and electronic technology.

Role of electron-phonon coupling in finite-temperature dielectric functions of Au, Ag, and Cu

NASA Astrophysics Data System (ADS)

Xu, Meng; Yang, Jia-Yue; Zhang, Shangyu; Liu, Linhua

2017-09-01

Realistic representation of finite temperature dielectric functions of noble metals is crucial in describing the optical properties of advancing applications in plasmonics and optical metamaterials. However, the atomistic origins of the temperature dependence of noble metals' dielectric functions still lack full explanation. In this paper, we implement electronic structure calculations as well as ellipsometry experiments to study the finite temperature dielectric functions of noble metals Au, Ag, and Cu. Theoretically, the intraband dielectric function is described by the Drude model, of which the important quantity electron lifetime is obtained by considering the electron-phonon, electron-electron, and electron-surface scattering mechanism. The electron-phonon coupling is key to determining the temperature dependence of electron lifetime and intraband dielectric function. For the interband dielectric function, it arises from the electronic interband transition. Due to the limitation of incorporating electron-phonon coupling into the interband transition scheme, the temperature dependence of the interband dielectric function is mainly determined by the thermal expansion effect. Experimentally, variable angle spectroscopic ellipsometry measures the dielectric functions of Au and Ag over the temperature range of 300-700 K and spectral range of 2-20 µm. Those experimental measurements are consistent with theoretical results and thus verify the theoretical models for the finite temperature dielectric function.

Packaging Technologies for 500C SiC Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2013-01-01

Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

GaN Based Electronics And Their Applications

NASA Astrophysics Data System (ADS)

Ren, Fan

2002-03-01

The Group III-nitrides were initially researched for their promise to fill the void for a blue solid state light emitter. Electronic devices from III-nitrides have been a more recent phenomenon. The thermal conductivity of GaN is three times that of GaAs. For high power or high temperature applications, good thermal conductivity is imperative for heat removal or sustained operation at elevated temperatures. The development of III-N and other wide bandgap technologies for high temperature applications will likely take place at the expense of competing technologies, such as silicon-on-insulator (SOI), at moderate temperatures. At higher temperatures (>300°C), novel devices and components will become possible. The automotive industry will likely be one of the largest markets for such high temperature electronics. One of the most noteworthy advantages for III-N materials over other wide bandgap semiconductors is the availability of AlGaN/GaN and InGaN/GaN heterostructures. A 2-dimensional electron gas (2DEG) has been shown to exist at the AlGaN/GaN interface, and heterostructure field effect transistors (HFETs) from these materials can exhibit 2DEG mobilities approaching 2000 cm2 / V?s at 300K. Power handling capabilities of 12 W/mm appear feasible, and extraordinary large signal performance has already been demonstrated, with a current state-of-the-art of >10W/mm at X-band. In this talk, high speed and high temperature AlGaN/GaN HEMTs as well as MOSHEMTs, high breakdown voltage GaN (>6KV) and AlGaN (9.7 KV) Schottky diodes, and their applications will be presented.

Effect of electron beam on the properties of electron-acoustic rogue waves

NASA Astrophysics Data System (ADS)

El-Shewy, E. K.; Elwakil, S. A.; El-Hanbaly, A. M.; Kassem, A. I.

2015-04-01

The properties of nonlinear electron-acoustic rogue waves have been investigated in an unmagnetized collisionless four-component plasma system consisting of a cold electron fluid, Maxwellian hot electrons, an electron beam and stationary ions. It is found that the basic set of fluid equations is reduced to a nonlinear Schrodinger equation. The dependence of rogue wave profiles and the associated electric field on the carrier wave number, normalized density of hot electron and electron beam, relative cold electron temperature and relative beam temperature are discussed. The results of the present investigation may be applicable in auroral zone plasma.

Next Generation Non-Vacuum, Maskless, Low Temperature Nanoparticle Ink Laser Digital Direct Metal Patterning for a Large Area Flexible Electronics

PubMed Central

Yeo, Junyeob; Hong, Sukjoon; Lee, Daehoo; Hotz, Nico; Lee, Ming-Tsang; Grigoropoulos, Costas P.; Ko, Seung Hwan

2012-01-01

Flexible electronics opened a new class of future electronics. The foldable, light and durable nature of flexible electronics allows vast flexibility in applications such as display, energy devices and mobile electronics. Even though conventional electronics fabrication methods are well developed for rigid substrates, direct application or slight modification of conventional processes for flexible electronics fabrication cannot work. The future flexible electronics fabrication requires totally new low-temperature process development optimized for flexible substrate and it should be based on new material too. Here we present a simple approach to developing a flexible electronics fabrication without using conventional vacuum deposition and photolithography. We found that direct metal patterning based on laser-induced local melting of metal nanoparticle ink is a promising low-temperature alternative to vacuum deposition– and photolithography-based conventional metal patterning processes. The “digital” nature of the proposed direct metal patterning process removes the need for expensive photomask and allows easy design modification and short turnaround time. This new process can be extremely useful for current small-volume, large-variety manufacturing paradigms. Besides, simple, scalable, fast and low-temperature processes can lead to cost-effective fabrication methods on a large-area polymer substrate. The developed process was successfully applied to demonstrate high-quality Ag patterning (2.1 µΩ·cm) and high-performance flexible organic field effect transistor arrays. PMID:22900011

Next generation non-vacuum, maskless, low temperature nanoparticle ink laser digital direct metal patterning for a large area flexible electronics.

PubMed

Yeo, Junyeob; Hong, Sukjoon; Lee, Daehoo; Hotz, Nico; Lee, Ming-Tsang; Grigoropoulos, Costas P; Ko, Seung Hwan

2012-01-01

Flexible electronics opened a new class of future electronics. The foldable, light and durable nature of flexible electronics allows vast flexibility in applications such as display, energy devices and mobile electronics. Even though conventional electronics fabrication methods are well developed for rigid substrates, direct application or slight modification of conventional processes for flexible electronics fabrication cannot work. The future flexible electronics fabrication requires totally new low-temperature process development optimized for flexible substrate and it should be based on new material too. Here we present a simple approach to developing a flexible electronics fabrication without using conventional vacuum deposition and photolithography. We found that direct metal patterning based on laser-induced local melting of metal nanoparticle ink is a promising low-temperature alternative to vacuum deposition- and photolithography-based conventional metal patterning processes. The "digital" nature of the proposed direct metal patterning process removes the need for expensive photomask and allows easy design modification and short turnaround time. This new process can be extremely useful for current small-volume, large-variety manufacturing paradigms. Besides, simple, scalable, fast and low-temperature processes can lead to cost-effective fabrication methods on a large-area polymer substrate. The developed process was successfully applied to demonstrate high-quality Ag patterning (2.1 µΩ·cm) and high-performance flexible organic field effect transistor arrays.

Ab initio determination of effective electron-phonon coupling factor in copper

NASA Astrophysics Data System (ADS)

Ji, Pengfei; Zhang, Yuwen

2016-04-01

The electron temperature Te dependent electron density of states g (ε), Fermi-Dirac distribution f (ε), and electron-phonon spectral function α2 F (Ω) are computed as prerequisites before achieving effective electron-phonon coupling factor Ge-ph. The obtained Ge-ph is implemented into a molecular dynamics (MD) and two-temperature model (TTM) coupled simulation of femtosecond laser heating. By monitoring temperature evolutions of electron and lattice subsystems, the result utilizing Ge-ph from ab initio calculation shows a faster decrease of Te and increase of Tl than those using Ge-ph from phenomenological treatment. The approach of calculating Ge-ph and its implementation into MD-TTM simulation is applicable to other metals.

SiGe Based Low Temperature Electronics for Lunar Surface Applications

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad M.; Kolawa, Elizabeth; Blalock, Benjamin; Cressler, John

2012-01-01

The temperature at the permanently shadowed regions of the moon's surface is approximately -240 C. Other areas of the lunar surface experience temperatures that vary between 120 C and -180 C during the day and night respectively. To protect against the large temperature variations of the moon surface, traditional electronics used in lunar robotics systems are placed inside a thermally controlled housing which is bulky, consumes power and adds complexity to the integration and test. SiGe Based electronics have the capability to operate over wide temperature range like that of the lunar surface. Deploying low temperature SiGe electronics in a lander platform can minimize the need for the central thermal protection system and enable the development of a new generation of landers and mobility platforms with highly efficient distributed architecture. For the past five years a team consisting of NASA, university and industry researchers has been examining the low temperature and wide temperature characteristic of SiGe based transistors for developing electronics for wide temperature needs of NASA environments such as the Moon, Titan, Mars and Europa. This presentation reports on the status of the development of wide temperature SiGe based electronics for the landers and lunar surface mobility systems.

Quantum-circuit refrigerator

NASA Astrophysics Data System (ADS)

Tan, Kuan Yen; Partanen, Matti; Lake, Russell E.; Govenius, Joonas; Masuda, Shumpei; Möttönen, Mikko

2017-05-01

Quantum technology promises revolutionizing applications in information processing, communications, sensing and modelling. However, efficient on-demand cooling of the functional quantum degrees of freedom remains challenging in many solid-state implementations, such as superconducting circuits. Here we demonstrate direct cooling of a superconducting resonator mode using voltage-controllable electron tunnelling in a nanoscale refrigerator. This result is revealed by a decreased electron temperature at a resonator-coupled probe resistor, even for an elevated electron temperature at the refrigerator. Our conclusions are verified by control experiments and by a good quantitative agreement between theory and experimental observations at various operation voltages and bath temperatures. In the future, we aim to remove spurious dissipation introduced by our refrigerator and to decrease the operational temperature. Such an ideal quantum-circuit refrigerator has potential applications in the initialization of quantum electric devices. In the superconducting quantum computer, for example, fast and accurate reset of the quantum memory is needed.

Flexible high-temperature dielectric materials from polymer nanocomposites.

PubMed

Li, Qi; Chen, Lei; Gadinski, Matthew R; Zhang, Shihai; Zhang, Guangzu; Li, Haoyu; Iagodkine, Elissei; Haque, Aman; Chen, Long-Qing; Jackson, Tom; Wang, Qing

2015-07-30

Dielectric materials, which store energy electrostatically, are ubiquitous in advanced electronics and electric power systems. Compared to their ceramic counterparts, polymer dielectrics have higher breakdown strengths and greater reliability, are scalable, lightweight and can be shaped into intricate configurations, and are therefore an ideal choice for many power electronics, power conditioning, and pulsed power applications. However, polymer dielectrics are limited to relatively low working temperatures, and thus fail to meet the rising demand for electricity under the extreme conditions present in applications such as hybrid and electric vehicles, aerospace power electronics, and underground oil and gas exploration. Here we describe crosslinked polymer nanocomposites that contain boron nitride nanosheets, the dielectric properties of which are stable over a broad temperature and frequency range. The nanocomposites have outstanding high-voltage capacitive energy storage capabilities at record temperatures (a Weibull breakdown strength of 403 megavolts per metre and a discharged energy density of 1.8 joules per cubic centimetre at 250 degrees Celsius). Their electrical conduction is several orders of magnitude lower than that of existing polymers and their high operating temperatures are attributed to greatly improved thermal conductivity, owing to the presence of the boron nitride nanosheets, which improve heat dissipation compared to pristine polymers (which are inherently susceptible to thermal runaway). Moreover, the polymer nanocomposites are lightweight, photopatternable and mechanically flexible, and have been demonstrated to preserve excellent dielectric and capacitive performance after intensive bending cycles. These findings enable broader applications of organic materials in high-temperature electronics and energy storage devices.

Flexible high-temperature dielectric materials from polymer nanocomposites

NASA Astrophysics Data System (ADS)

Li, Qi; Chen, Lei; Gadinski, Matthew R.; Zhang, Shihai; Zhang, Guangzu; Li, Haoyu; Haque, Aman; Chen, Long-Qing; Jackson, Tom; Wang, Qing

2015-07-01

Dielectric materials, which store energy electrostatically, are ubiquitous in advanced electronics and electric power systems. Compared to their ceramic counterparts, polymer dielectrics have higher breakdown strengths and greater reliability, are scalable, lightweight and can be shaped into intricate configurations, and are therefore an ideal choice for many power electronics, power conditioning, and pulsed power applications. However, polymer dielectrics are limited to relatively low working temperatures, and thus fail to meet the rising demand for electricity under the extreme conditions present in applications such as hybrid and electric vehicles, aerospace power electronics, and underground oil and gas exploration. Here we describe crosslinked polymer nanocomposites that contain boron nitride nanosheets, the dielectric properties of which are stable over a broad temperature and frequency range. The nanocomposites have outstanding high-voltage capacitive energy storage capabilities at record temperatures (a Weibull breakdown strength of 403 megavolts per metre and a discharged energy density of 1.8 joules per cubic centimetre at 250 degrees Celsius). Their electrical conduction is several orders of magnitude lower than that of existing polymers and their high operating temperatures are attributed to greatly improved thermal conductivity, owing to the presence of the boron nitride nanosheets, which improve heat dissipation compared to pristine polymers (which are inherently susceptible to thermal runaway). Moreover, the polymer nanocomposites are lightweight, photopatternable and mechanically flexible, and have been demonstrated to preserve excellent dielectric and capacitive performance after intensive bending cycles. These findings enable broader applications of organic materials in high-temperature electronics and energy storage devices.

Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry.

PubMed

Ju, Sanghyun; Li, Jianfeng; Liu, Jun; Chen, Po-Chiang; Ha, Young-Geun; Ishikawa, Fumiaki; Chang, Hsiaokang; Zhou, Chongwu; Facchetti, Antonio; Janes, David B; Marks, Tobin J

2008-04-01

Optically transparent, mechanically flexible displays are attractive for next-generation visual technologies and portable electronics. In principle, organic light-emitting diodes (OLEDs) satisfy key requirements for this application-transparency, lightweight, flexibility, and low-temperature fabrication. However, to realize transparent, flexible active-matrix OLED (AMOLED) displays requires suitable thin-film transistor (TFT) drive electronics. Nanowire transistors (NWTs) are ideal candidates for this role due to their outstanding electrical characteristics, potential for compact size, fast switching, low-temperature fabrication, and transparency. Here we report the first demonstration of AMOLED displays driven exclusively by NW electronics and show that such displays can be optically transparent. The displays use pixel dimensions suitable for hand-held applications, exhibit 300 cd/m2 brightness, and are fabricated at temperatures suitable for integration on plastic substrates.

Ultrafast electronic relaxation in superheated bismuth

NASA Astrophysics Data System (ADS)

Gamaly, E. G.; Rode, A. V.

2013-01-01

Interaction of moving electrons with vibrating ions in the lattice forms the basis for many physical properties from electrical resistivity and electronic heat capacity to superconductivity. In ultrafast laser interaction with matter the electrons are heated much faster than the electron-ion energy equilibration, leading to a two-temperature state with electron temperature far above that of the lattice. The rate of temperature equilibration is governed by the strength of electron-phonon energy coupling, which is conventionally described by a coupling constant, neglecting the dependence on the electron and lattice temperature. The application of this constant to the observations of fast relaxation rate led to a controversial notion of ‘ultra-fast non-thermal melting’ under extreme electronic excitation. Here we provide theoretical grounds for a strong dependence of the electron-phonon relaxation time on the lattice temperature. We show, by taking proper account of temperature dependence, that the heating and restructuring of the lattice occurs much faster than were predicted on the assumption of a constant, temperature independent energy coupling. We applied the temperature-dependent momentum and energy transfer time to experiments on fs-laser excited bismuth to demonstrate that all the observed ultra-fast transformations of the transient state of bismuth are purely thermal in nature. The developed theory, when applied to ultrafast experiments on bismuth, provides interpretation of the whole variety of transient phase relaxation without the non-thermal melting conjecture.

Electronic Components and Circuits for Extreme Temperature Environments

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Dickman, John E.; Gerber, Scott

2003-01-01

Planetary exploration missions and deep space probes require electrical power management and control systems that are capable of efficient and reliable operation in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures will not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures; thereby reducing system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior and tolerance in the electrical and thermal properties of semiconductor and dielectric materials at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial-off-the-shelf as well as developed components that are being characterized include switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being investigated for potential use in low temperature applications. An overview of the NASA Glenn Research Center Low Temperature Electronic Program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained through in-house component and circuit testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

High Temperature Pt/Alumina Co-Fired System for 500 C Electronic Packaging Applications

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

2015-01-01

Gold thick-film metallization and 96 alumina substrate based prototype packaging system developed for 500C SiC electronics and sensors is briefly reviewed, the needs of improvement are discussed. A high temperature co-fired alumina material system based packaging system composed of 32-pin chip-level package and printed circuit board is discussed for packaging 500C SiC electronics and sensors.

Packaging Technology Developed for High-Temperature Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.

2001-01-01

High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as sensors and electronics for space missions to the inner solar system, sensors for in situ combustion and emission monitoring, and electronics for combustion control for aeronautical and automotive engines. However, these devices cannot be used until they can be packaged in appropriate forms for specific applications. Suitable packaging technology for operation temperatures up to 500 C and beyond is not commercially available. Thus, the development of a systematic high-temperature packaging technology for SiC-based microsystems is essential for both in situ testing and commercializing high-temperature SiC sensors and electronics. In response to these needs, researchers at Glenn innovatively designed, fabricated, and assembled a new prototype electronic package for high-temperature electronic microsystems using ceramic substrates (aluminum nitride and aluminum oxide) and gold (Au) thick-film metallization. Packaging components include a ceramic packaging frame, thick-film metallization-based interconnection system, and a low electrical resistance SiC die-attachment scheme. Both the materials and fabrication process of the basic packaging components have been tested with an in-house-fabricated SiC semiconductor test chip in an oxidizing environment at temperatures from room temperature to 500 C for more than 1000 hr. These test results set lifetime records for both high-temperature electronic packaging and high-temperature electronic device testing. As required, the thick-film-based interconnection system demonstrated low (2.5 times of the room-temperature resistance of the Au conductor) and stable (decreased 3 percent in 1500 hr of continuous testing) electrical resistance at 500 C in an oxidizing environment. Also as required, the electrical isolation impedance between printed wires that were not electrically joined by a wire bond remained high (greater than 0.4 GW) at 500 C in air. The attached SiC diode demonstrated low (less than 3.8 W/mm2) and relatively consistent dynamic resistance from room temperature to 500 C. These results indicate that the prototype package and the compatible die-attach scheme meet the initial design standards for high-temperature, low-power, and long-term operation. This technology will be further developed and evaluated, especially with more mechanical tests of each packaging element for operation at higher temperatures and longer lifetimes.

Thermionic Power Cell To Harness Heat Energies for Geothermal Applications

NASA Technical Reports Server (NTRS)

Manohara, Harish; Mojarradi, Mohammad; Greer, Harold F.

2011-01-01

A unit thermionic power cell (TPC) concept has been developed that converts natural heat found in high-temperature environments (460 to 700 C) into electrical power for in situ instruments and electronics. Thermionic emission of electrons occurs when an emitter filament is heated to gwhite hot h temperatures (>1,000 C) allowing electrons to overcome the potential barrier and emit into the vacuum. These electrons are then collected by an anode, and transported to the external circuit for energy storage.

Thermal Peak Management Using Organic Phase Change Materials for Latent Heat Storage in Electronic Applications

PubMed Central

Maxa, Jacob; Novikov, Andrej; Nowottnick, Mathias

2017-01-01

Modern high power electronics devices consists of a large amount of integrated circuits for switching and supply applications. Beside the benefits, the technology exhibits the problem of an ever increasing power density. Nowadays, heat sinks that are directly mounted on a device, are used to reduce the on-chip temperature and dissipate the thermal energy to the environment. This paper presents a concept of a composite coating for electronic components on printed circuit boards or electronic assemblies that is able to buffer a certain amount of thermal energy, dissipated from a device. The idea is to suppress temperature peaks in electronic components during load peaks or electronic shorts, which otherwise could damage or destroy the device, by using a phase change material to buffer the thermal energy. The phase change material coating could be directly applied on the chip package or the PCB using different mechanical retaining jigs.

Single Crystal Diamond Needle as Point Electron Source.

PubMed

Kleshch, Victor I; Purcell, Stephen T; Obraztsov, Alexander N

2016-10-12

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

Single Crystal Diamond Needle as Point Electron Source

NASA Astrophysics Data System (ADS)

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-10-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

High temperature electronics applications in space exploration

NASA Technical Reports Server (NTRS)

Jurgens, R. F.

1981-01-01

The extension of the range of operating temperatures of electronic components and systems for planetary exploration is examined. In particular, missions which utilize balloon-borne instruments to study the Venusian and Jovian atmospheres are discussed. Semiconductor development and devices including power sources, ultrastable oscillators, transmitters, antennas, electromechanical devices, and deployment systems are addressed.

Effect of Different Time/Temperature Roast Combinations on Peanut Flavor-Descriptive Sensory, Electronic Nose and Electronic Eye Characterization

USDA-ARS?s Scientific Manuscript database

Roasting is of central importance to peanut flavor. Standard industry practice is to roast peanuts to a specific surface color (Hunter L-value) for a given application; however, equivalent surface colors can be generated using different temperature/time roast combinations. To better understand the e...

Silicon Carbide Integrated Circuit Chip

NASA Image and Video Library

2015-02-17

A multilevel interconnect silicon carbide integrated circuit chip with co-fired ceramic package and circuit board recently developed at the NASA GRC Smart Sensors and Electronics Systems Branch for high temperature applications. High temperature silicon carbide electronics and compatible packaging technologies are elements of instrumentation for aerospace engine control and long term inner-solar planet explorations.

Multipurpose setup for low-temperature conversion electron Mössbauer spectroscopy

NASA Astrophysics Data System (ADS)

Augustyns, V.; Trekels, M.; Gunnlaugsson, H. P.; Masenda, H.; Temst, K.; Vantomme, A.; Pereira, L. M. C.

2017-05-01

We describe an experimental setup for conversion electron Mössbauer spectroscopy (CEMS) at low temperature. The setup is composed of a continuous flow cryostat (temperature range of 4.2-500 K), detector housing, three channel electron multipliers, and corresponding electronics. We demonstrate the capabilities of the setup with CEMS measurements performed on a sample consisting of a thin enriched 57Fe film, with a thickness of 20 nm, deposited on a silicon substrate. We also describe exchangeable adaptations (lid and sample holder) which extend the applicability of the setup to emission Mössbauer spectroscopy as well as measurements under an applied magnetic field.

Whistler waves with electron temperature anisotropy and non-Maxwellian distribution functions

NASA Astrophysics Data System (ADS)

Malik, M. Usman; Masood, W.; Qureshi, M. N. S.; Mirza, Arshad M.

2018-05-01

The previous works on whistler waves with electron temperature anisotropy narrated the dependence on plasma parameters, however, they did not explore the reasons behind the observed differences. A comparative analysis of the whistler waves with different electron distributions has not been made to date. This paper attempts to address both these issues in detail by making a detailed comparison of the dispersion relations and growth rates of whistler waves with electron temperature anisotropy for Maxwellian, Cairns, kappa and generalized (r, q) distributions by varying the key plasma parameters for the problem under consideration. It has been found that the growth rate of whistler instability is maximum for flat-topped distribution whereas it is minimum for the Maxwellian distribution. This work not only summarizes and complements the previous work done on the whistler waves with electron temperature anisotropy but also provides a general framework to understand the linear propagation of whistler waves with electron temperature anisotropy that is applicable in all regions of space plasmas where the satellite missions have indicated their presence.

Gapped electronic structure of epitaxial stanene on InSb(111)

DOE PAGES

Xu, Cai-Zhi; Chan, Yang-Hao; Chen, Peng; ...

2018-01-11

We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement withmore » our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.« less

Gapped electronic structure of epitaxial stanene on InSb(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Cai-Zhi; Chan, Yang-Hao; Chen, Peng

We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement withmore » our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.« less

Investigation of Radiation Resistant Polymer Photodetectors for Space Applications

DTIC Science & Technology

2002-09-11

54 A. XPD Data 54 B. Bibliography 56 iv FIGURES Figure Page 1. Electron transfer in a self-assembled dye-sensitized heterojunction device...electrooptic technology for space applications. By employing molecular engineering to achieve selective orientation of π- electrons within the polymer...temperature, vacuum and radiation induced degradation. Many of these adverse effects are well known for a wide variety of inorganic electronic materials

High-Temperature Gas Sensor Array (Electronic Nose) Demonstrated

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

2002-01-01

The ability to measure emissions from aeronautic engines and in commercial applications such as automotive emission control and chemical process monitoring is a necessary first step if one is going to actively control those emissions. One single sensor will not give all the information necessary to determine the chemical composition of a high-temperature, harsh environment. Rather, an array of gas sensor arrays--in effect, a high-temperature electronic "nose"--is necessary to characterize the chemical constituents of a diverse, high-temperature environment, such as an emissions stream. The signals produced by this nose could be analyzed to determine the constituents of the emission stream. Although commercial electronic noses for near-room temperature applications exist, they often depend significantly on lower temperature materials or only one sensor type. A separate development effort necessary for a high-temperature electronic nose is being undertaken by the NASA Glenn Research Center, Case Western Reserve University, Ohio State University, and Makel Engineering, Inc. The sensors are specially designed for hightemperature environments. A first-generation high-temperature electronic nose has been demonstrated on a modified automotive engine. This nose sensor array was composed of sensors designed for hightemperature environments fabricated using microelectromechanical-systems- (MEMS-) based technology. The array included a tin-oxide-based sensor doped for nitrogen oxide (NOx) sensitivity, a SiC-based hydrocarbon (CxHy) sensor, and an oxygen sensor (O2). These sensors operate on different principles--resistor, diode, and electrochemical cell, respectively--and each sensor has very different responses to the individual gases in the environment. A picture showing the sensor head for the array is shown in the photograph on the left and the sensors installed in the engine are shown in the photograph on the right. Electronics are interfaced with the sensors for temperature control and signal conditioning, and packaging designed for high temperatures is necessary for the array to survive the engine environment.

Evaluation of Fast Switching Diode 1N4448 Over a Wide Temperature Range

NASA Technical Reports Server (NTRS)

Boomer, Kristen; Damron, James; Gray, Josh; Hammoud, Ahmad

2017-01-01

Electronic parts used in the design of power systems geared for space applications are often exposed to extreme temperatures and thermal cycling. Limited data exist on the performance and reliability of commercial-off-the-shelf (COTS) electronic parts at temperatures beyond the manufacturers specified operating temperature range. This report summarizes preliminary results obtained on the evaluation of automotive-grade, fast switching diodes over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these diodes and to determine suitability for use outside their recommended temperature limits.

Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2010-01-01

Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.

Modeling of a Von Platen-Munters diffusion absorption refrigeration cycle

NASA Astrophysics Data System (ADS)

Agostini, Bruno; Agostini, Francesco; Habert, Mathieu

2016-09-01

This article presents a thermodynamical model of a Von-Platen diffusion absorption refrigeration cycle for power electronics applications. It is first validated by comparison with data available in the literature for the classical water-ammonia-helium cycle for commercial absorption fridges. Then new operating conditions corresponding to specific ABB applications, namely high ambient temperature and new organic fluids combinations compatible with aluminium are simulated and discussed. The target application is to cool power electronics converters in harsh environments with high ambient temperature by providing refrigeration without compressor, for passive components losses of about 500 W, with a compact and low cost solution.

On the generation of magnetosheath lion roars

NASA Technical Reports Server (NTRS)

Lee, L. C.; Wu, C. S.; Price, C. P.

1987-01-01

A theoretical model is proposed to discuss the electron dynamics associated with the mirror waves and their effects on the generation of the observed lion roars in the magnetosheath. It is pointed out that the usual double-adiabatic theory of hydromagnetics is not applicable to the electrons in mirror waves. Although the electron magnetic moment is conserved, the energy of each electron in the mirror waves is expected to be constant. Assuming an initial electron temperature anisotropy, it can be shown that in the low field region the electron temperature and thermal anisotropy are higher than the initial values, whereas in the high field region the electron temperature and anisotropy are lower. This point can lead to a theoretical explanation of the important features of the observed lion roars. Then present discussion complements the existing theories in the literature.

Evaluation of Capacitors at Cryogenic Temperatures for Space Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Gerber, Scott S.

1998-01-01

Advanced electronic systems designed for use in planetary exploration missions must operate efficiently and reliably under the extreme cold temperatures of deep space environment. In addition, spacecraft power electronics capable of cold temperature operation will greatly simplify the thermal management system by eliminating the need for heating units and associated equipment and thereby reduce the size and weight of the overall power system. In this study, film, mica, solid tantalum and electric double layer capacitors were evaluated as a function of temperature from room to liquid nitrogen in terms of their dielectric properties. These properties included capacitance stability and dielectric loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed on the capacitors. The results obtained are discussed and conclusions are made concerning the suitability of the capacitors investigated for low temperature applications.

Free-standing nanocomposites with high conductivity and extensibility.

PubMed

Chun, Kyoung-Yong; Kim, Shi Hyeong; Shin, Min Kyoon; Kim, Youn Tae; Spinks, Geoffrey M; Aliev, Ali E; Baughman, Ray H; Kim, Seon Jeong

2013-04-26

The prospect of electronic circuits that are stretchable and bendable promises tantalizing applications such as skin-like electronics, roll-up displays, conformable sensors and actuators, and lightweight solar cells. The preparation of highly conductive and highly extensible materials remains a challenge for mass production applications, such as free-standing films or printable composite inks. Here we present a nanocomposite material consisting of carbon nanotubes, ionic liquid, silver nanoparticles, and polystyrene-polyisoprene-polystyrene having a high electrical conductivity of 3700 S cm(-1) that can be stretched to 288% without permanent damage. The material is prepared as a concentrated dispersion suitable for simple processing into free-standing films. For the unstrained state, the measured thermal conductivity for the electronically conducting elastomeric nanoparticle film is relatively high and shows a non-metallic temperature dependence consistent with phonon transport, while the temperature dependence of electrical resistivity is metallic. We connect an electric fan to a DC power supply using the films to demonstrate their utility as an elastomeric electronic interconnect. The huge strain sensitivity and the very low temperature coefficient of resistivity suggest their applicability as strain sensors, including those that operate directly to control motors and other devices.

On the generation of magnetosheath lion roars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, L.C.; Wu, C.S.; Price, C.P.

1987-03-01

A theoretical model is proposed to discuss the electron dynamics associated with the mirror waves and their effects on the generation of the observed lion roars in the magnetosheath. It is pointed out that the usual double-adiabatic theory of hydromagnetics is not applicable to the electrons in mirror waves. Although the electron magnetic moment is conserved, the energy of each electron in the mirror waves is expected to be constant (because of the high electron speed along the magnetic field). Assuming an initial electron temperature anisotropy, the authors can show that in the low field region the electron temperature andmore » thermal anisotropy are higher than the initial values, whereas in the high field region the electron temperature and anisotropy are lower. This point can lead to a theoretical explanation of the important features of the observed lion roars. The present discussion complements the existing theories in the literature.« less

Densification of a-IGZO with low-temperature annealing for flexible electronics applications

NASA Astrophysics Data System (ADS)

Troughton, J. G.; Downs, P.; Price, R.; Atkinson, D.

2017-01-01

Amorphous InGaZnO (a-IGZO) thin-film transistors are a leading contender for active channel materials in next generation flat panel displays and flexible electronics. Improved electronic functionality has been linked to the increased density of a-IGZO, and while much work has looked at high-temperature processes, studies at temperatures compatible with flexible substrates are needed. Here, compositional and structural analyses show that short term, low-temperature annealing (<6 h) can increase the density of sputtered a-IGZO by up to 5.6% for temperatures below 300 °C, which is expected to improve the transistor performance, while annealing for longer times leads to a subsequent decrease in density due to oxygen absorption.

The Conference on High Temperature Electronics

NASA Technical Reports Server (NTRS)

Hamilton, D. J.; Mccormick, J. B.; Kerwin, W. J.; Narud, J. A.

1981-01-01

The status of and directions for high temperature electronics research and development were evaluated. Major objectives were to (1) identify common user needs; (2) put into perspective the directions for future work; and (3) address the problem of bringing to practical fruition the results of these efforts. More than half of the presentations dealt with materials and devices, rather than circuits and systems. Conference session titles and an example of a paper presented in each session are (1) User requirements: High temperature electronics applications in space explorations; (2) Devices: Passive components for high temperature operation; (3) Circuits and systems: Process characteristics and design methods for a 300 degree QUAD or AMP; and (4) Packaging: Presently available energy supply for high temperature environment.

The Conference on High Temperature Electronics

NASA Astrophysics Data System (ADS)

Hamilton, D. J.; McCormick, J. B.; Kerwin, W. J.; Narud, J. A.

The status of and directions for high temperature electronics research and development were evaluated. Major objectives were to (1) identify common user needs; (2) put into perspective the directions for future work; and (3) address the problem of bringing to practical fruition the results of these efforts. More than half of the presentations dealt with materials and devices, rather than circuits and systems. Conference session titles and an example of a paper presented in each session are (1) User requirements: High temperature electronics applications in space explorations; (2) Devices: Passive components for high temperature operation; (3) Circuits and systems: Process characteristics and design methods for a 300 degree QUAD or AMP; and (4) Packaging: Presently available energy supply for high temperature environment.

Large-Velocity Saturation in Thin-Film Black Phosphorus Transistors.

PubMed

Chen, Xiaolong; Chen, Chen; Levi, Adi; Houben, Lothar; Deng, Bingchen; Yuan, Shaofan; Ma, Chao; Watanabe, Kenji; Taniguchi, Takashi; Naveh, Doron; Du, Xu; Xia, Fengnian

2018-05-22

A high saturation velocity semiconductor is appealing for applications in electronics and optoelectronics. Thin-film black phosphorus (BP), an emerging layered semiconductor, shows a high carrier mobility and strong mid-infrared photoresponse at room temperature. Here, we report the observation of high intrinsic saturation velocity in 7 to 11 nm thick BP for both electrons and holes as a function of charge-carrier density, temperature, and crystalline direction. We distinguish a drift velocity transition point due to the competition between the electron-impurity and electron-phonon scatterings. We further achieve a room-temperature saturation velocity of 1.2 (1.0) × 10 7 cm s -1 for hole (electron) carriers at a critical electric field of 14 (13) kV cm -1 , indicating an intrinsic current-gain cutoff frequency ∼20 GHz·μm for radio frequency applications. Moreover, the current density is as high as 580 μA μm -1 at a low electric field of 10 kV cm -1 . Our studies demonstrate that thin-film BP outperforms silicon in terms of saturation velocity and critical field, revealing its great potential in radio-frequency electronics, high-speed mid-infrared photodetectors, and optical modulators.

Conditions for Aeronomic Applicability of the Classical Electron Heat Conduction Formula

NASA Technical Reports Server (NTRS)

Cole, K. D.; Hoegy, W. R.

1998-01-01

Conditions for the applicability of the classical formula for heat conduction in the electrons in ionized gas are investigated. In a fully ionised gas ( V(sub en) much greater than V(sub ei)), when the mean free path for electron-electron (or electron-ion) collisions is much larger than the characteristic thermal scale length of the observed system, the conditions for applicability break down. In the case of the Venus ionosphere this breakdown is indicated for a large fraction of the electron temperature data from altitudes greater than 180 km, for electron densities less than 10(exp 4)/cc cm. In a partially ionised gas such that V(sub en) much greater than V(sub ei) there is breakdown of the formula not only when the mean free path of electrons greatly exceeds the thermal scale length, but also when the gradient of neutral particle density exceeds the electron thermal gradient. It is shown that electron heat conduction may be neglected in estimating the temperature of joule heated electrons by observed strong 100 Hz electric fields when the conduction flux is limited by the saturation flux. The results of this paper support our earlier aeronomical arguments against the hypothesis of planetary scale whistlers for the 100 Hz electric field signal. In turn this means that data from the 100 Hz signal may not be used to support the case for lightning on Venus.

Temperature-driven topological quantum phase transitions in a phase-change material Ge2Sb2Te5.

PubMed

Eremeev, S V; Rusinov, I P; Echenique, P M; Chulkov, E V

2016-12-13

The Ge 2 Sb 2 Te 5 is a phase-change material widely used in optical memory devices and is a leading candidate for next generation non-volatile random access memory devices which are key elements of various electronics and portable systems. Despite the compound is under intense investigation its electronic structure is currently not fully understood. The present work sheds new light on the electronic structure of the Ge 2 Sb 2 Te 5 crystalline phases. We demonstrate by predicting from first-principles calculations that stable crystal structures of Ge 2 Sb 2 Te 5 possess different topological quantum phases: a topological insulator phase is realized in low-temperature structure and Weyl semimetal phase is a characteristic of the high-temperature structure. Since the structural phase transitions are caused by the temperature the switching between different topologically non-trivial phases can be driven by variation of the temperature. The obtained results reveal the rich physics of the Ge 2 Sb 2 Te 5 compound and open previously unexplored possibility for spintronics applications of this material, substantially expanding its application potential.

Recent Advances in the Development of Processable High-Temperature POLYMERS1

NASA Astrophysics Data System (ADS)

Meador, Michael A.

1998-08-01

High-temperature polymers have found widespread use in aerospace and electronics applications. This review deals with recent developments in the chemistry of these materials that have led to improvements in processability and high-temperature stability.

Diode Lasers used in Plastic Welding and Selective Laser Soldering - Applications and Products

NASA Astrophysics Data System (ADS)

Reinl, S.

Aside from conventional welding methods, laser welding of plastics has established itself as a proven bonding method. The component-conserving and clean process offers numerous advantages and enables welding of sensitive assemblies in automotive, electronic, medical, human care, food packaging and consumer electronics markets. Diode lasers are established since years within plastic welding applications. Also, soft soldering using laser radiation is becoming more and more significant in the field of direct diode laser applications. Fast power controllability combined with a contactless temperature measurement to minimize thermal damage make the diode laser an ideal tool for this application. These advantages come in to full effect when soldering of increasingly small parts in temperature sensitive environments is necessary.

Nanoscale Engineering in VO2 Nanowires via Direct Electron Writing Process.

PubMed

Zhang, Zhenhua; Guo, Hua; Ding, Wenqiang; Zhang, Bin; Lu, Yue; Ke, Xiaoxing; Liu, Weiwei; Chen, Furong; Sui, Manling

2017-02-08

Controlling phase transition in functional materials at nanoscale is not only of broad scientific interest but also important for practical applications in the fields of renewable energy, information storage, transducer, sensor, and so forth. As a model functional material, vanadium dioxide (VO 2 ) has its metal-insulator transition (MIT) usually at a sharp temperature around 68 °C. Here, we report a focused electron beam can directly lower down the transition temperature of a nanoarea to room temperature without prepatterning the VO 2 . This novel process is called radiolysis-assisted MIT (R-MIT). The electron beam irradiation fabricates a unique gradual MIT zone to several times of the beam size in which the temperature-dependent phase transition is achieved in an extended temperature range. The gradual transformation zone offers to precisely control the ratio of metal/insulator phases. This direct electron writing technique can open up an opportunity to precisely engineer nanodomains of diversified electronic properties in functional material-based devices.

Single Crystal Diamond Needle as Point Electron Source

PubMed Central

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-01-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2–0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics. PMID:27731379

High Temperature Electronics for Intelligent Harsh Environment Sensors

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2008-01-01

The development of intelligent instrumentation systems is of high interest in both public and private sectors. In order to obtain this ideal in extreme environments (i.e., high temperature, extreme vibration, harsh chemical media, and high radiation), both sensors and electronics must be developed concurrently in order that the entire system will survive for extended periods of time. The semiconductor silicon carbide (SiC) has been studied for electronic and sensing applications in extreme environment that is beyond the capability of conventional semiconductors such as silicon. The advantages of SiC over conventional materials include its near inert chemistry, superior thermomechanical properties in harsh environments, and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Power management and distribution technology

NASA Astrophysics Data System (ADS)

Dickman, John Ellis

Power management and distribution (PMAD) technology is discussed in the context of developing working systems for a piloted Mars nuclear electric propulsion (NEP) vehicle. The discussion is presented in vugraph form. The following topics are covered: applications and systems definitions; high performance components; the Civilian Space Technology Initiative (CSTI) high capacity power program; fiber optic sensors for power diagnostics; high temperature power electronics; 200 C baseplate electronics; high temperature component characterization; a high temperature coaxial transformer; and a silicon carbide mosfet.

Power management and distribution technology

NASA Technical Reports Server (NTRS)

Dickman, John Ellis

1993-01-01

Power management and distribution (PMAD) technology is discussed in the context of developing working systems for a piloted Mars nuclear electric propulsion (NEP) vehicle. The discussion is presented in vugraph form. The following topics are covered: applications and systems definitions; high performance components; the Civilian Space Technology Initiative (CSTI) high capacity power program; fiber optic sensors for power diagnostics; high temperature power electronics; 200 C baseplate electronics; high temperature component characterization; a high temperature coaxial transformer; and a silicon carbide mosfet.

Silicon Carbide Solar Cells Investigated

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.

2001-01-01

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.

2003-01-01

Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

Dynamics of High Temperature Plasmas.

DTIC Science & Technology

1985-10-01

25 VI. > LASER BEAT WAVE PARTICLE ACCELERATION-.. ..... .. 27 ,, VII. ORBITRON MASER DESIGN .. ..... ............. 30 0 VIIM> ELECTRON BEAM STABILITY...IN THE MODIFIED BETATRON .... ............ 32 IX. * RELATIVISTIC ELECTRON BEAM DIODE DESIGN . . . . 35 X. FREE ELECTRON LASER APPLICATION TO XUV...Accelerators (B), VI. Laser Beat Wave Particle Acceleration, VII. Orbitron Maser Design , VIII. Electron Beam Stability in the Modified Betatron, IX

DEMONSTRATION BULLETIN: HIGH VOLTAGE ELECTRON BEAM TECHNOLOGY - HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.

EPA Science Inventory

The high energy electron beam irradiation technology is a low temperature method for destroying complex mixtures of hazardous organic chemicals in solutions containing solids. The system consists of a computer-automated, portable electron beam accelerator and a delivery system. T...

Observations of electron heating during 28 GHz microwave power application in proto-MPEX

DOE PAGES

Biewer, Theodore M.; Bigelow, Tim S.; Caneses Marin, Juan F.; ...

2018-02-01

The Prototype Material Plasma Exposure Experiment at the Oak Ridge National Laboratory utilizes a variety of power systems to generate and deliver a high heat flux plasma onto the surface of material targets. In the experiments described here, a deuterium plasma is produced via a ~100 kW, 13.56 MHz RF helicon source, to which ~20 kW of 28 GHz microwave power is applied. The electron density and temperature profiles are measured using a Thomson scattering (TS) diagnostic, and indicate that the electron density is centrally peaked. In the core of the plasma column, the electron density is higher than themore » cut-off density (~0.9 × 1019 m -3) for the launched mixture of X- and O-mode electron cyclotron heating waves to propagate. TS measurements indicate electron temperature increases from ~5 eV to ~20 eV during 28 GHz power application when the neutral deuterium pressure is reduced below 0.13 Pa (~1 mTorr.).« less

Observations of electron heating during 28 GHz microwave power application in proto-MPEX

NASA Astrophysics Data System (ADS)

Biewer, T. M.; Bigelow, T. S.; Caneses, J. F.; Diem, S. J.; Green, D. L.; Kafle, N.; Rapp, J.; Proto-MPEX Team

2018-02-01

The Prototype Material Plasma Exposure Experiment at the Oak Ridge National Laboratory utilizes a variety of power systems to generate and deliver a high heat flux plasma onto the surface of material targets. In the experiments described here, a deuterium plasma is produced via a ˜100 kW, 13.56 MHz RF helicon source, to which ˜20 kW of 28 GHz microwave power is applied. The electron density and temperature profiles are measured using a Thomson scattering (TS) diagnostic, and indicate that the electron density is centrally peaked. In the core of the plasma column, the electron density is higher than the cut-off density (˜0.9 × 1019 m-3) for the launched mixture of X- and O-mode electron cyclotron heating waves to propagate. TS measurements indicate electron temperature increases from ˜5 eV to ˜20 eV during 28 GHz power application when the neutral deuterium pressure is reduced below 0.13 Pa (˜1 mTorr.).

Performance of High-Speed PWM Control Chips at Cryogenic Temperatures

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.; Gerber, Scott; Hammoud, Ahmad; Patterson, Richard; Overton, Eric

2001-01-01

The operation of power electronic systems at cryogenic temperatures is anticipated in many NASA space missions such as planetary exploration and deep space probes. In addition to surviving the space hostile environment, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. As part of the NASA Glenn Low Temperature Electronics Program, several commercial high-speed Pulse Width Modulation (PWM) chips have been characterized in terms of their performance as a function of temperature in the range of 25 to -196 C (liquid nitrogen). These chips ranged in their electrical characteristics, modes of control, packaging options, and applications. The experimental procedures along with the experimental data obtained on the investigated chips are presented and discussed.

Electron energy distribution function in the divertor region of the COMPASS tokamak during neutral beam injection heating

NASA Astrophysics Data System (ADS)

Hasan, E.; Dimitrova, M.; Havlicek, J.; Mitošinková, K.; Stöckel, J.; Varju, J.; Popov, Tsv K.; Komm, M.; Dejarnac, R.; Hacek, P.; Panek, R.; the COMPASS Team

2018-02-01

This paper presents the results from swept probe measurements in the divertor region of the COMPASS tokamak in D-shaped, L-mode discharges, with toroidal magnetic field BT = 1.15 T, plasma current Ip = 180 kA and line-average electron densities varying from 2 to 8×1019 m-3. Using neutral beam injection heating, the electron energy distribution function is studied before and during the application of the beam. The current-voltage characteristics data are processed using the first-derivative probe technique. This technique allows one to evaluate the plasma potential and the real electron energy distribution function (respectively, the electron temperatures and densities). At the low average electron density of 2×1019 m-3, the electron energy distribution function is bi-Maxwellian with a low-energy electron population with temperatures 4-6 eV and a high-energy electron group 12-25 eV. As the line-average electron density is increased, the electron temperatures decrease. At line-average electron densities above 7×1019 m-3, the electron energy distribution function is found to be Maxwellian with a temperature of 6-8.5 eV. The effect of the neutral beam injection heating power in the divertor region is also studied.

Distributed Control Architecture for Gas Turbine Engine. Chapter 4

NASA Technical Reports Server (NTRS)

Culley, Dennis; Garg, Sanjay

2009-01-01

The transformation of engine control systems from centralized to distributed architecture is both necessary and enabling for future aeropropulsion applications. The continued growth of adaptive control applications and the trend to smaller, light weight cores is a counter influence on the weight and volume of control system hardware. A distributed engine control system using high temperature electronics and open systems communications will reverse the growing trend of control system weight ratio to total engine weight and also be a major factor in decreasing overall cost of ownership for aeropropulsion systems. The implementation of distributed engine control is not without significant challenges. There are the needs for high temperature electronics, development of simple, robust communications, and power supply for the on-board electronics.

Effect of modified thermal conductivity on the temperature distribution in the protonosphere.

NASA Technical Reports Server (NTRS)

Mayr, H. G.; Fontheim, E. G.; Mahajan, K. K.

1973-01-01

At typical protonospheric electron densities the electron mean free path is sufficiently long so that the coefficient of thermal conductivity is no longer given by Spitzer's expression. The effect on the temperature profile of using the corrected expression for conductivity is investigated. The corrected thermal conduction coefficient is density-dependent and has a more complicated temperature dependence than the coefficient applicable to higher density plasmas. The results indicate that the effect is not negligible even under quiet conditions and at low latitudes.

Thermodynamic properties and transport coefficients of a two-temperature polytetrafluoroethylene vapor plasma for ablation-controlled discharge applications

NASA Astrophysics Data System (ADS)

Wang, Haiyan; Wang, Weizong; Yan, Joseph D.; Qi, Haiyang; Geng, Jinyue; Wu, Yaowu

2017-10-01

Ablation-controlled plasmas have been used in a range of technical applications where local thermodynamic equilibrium (LTE) is often violated near the wall due to the strong cooling effect caused by the ablation of wall materials. The thermodynamic and transport properties of ablated polytetrafluoroethylene (PTFE) vapor, which determine the flowing plasma behavior in such applications, are calculated based on a two-temperature model at atmospheric pressure. To our knowledge, no data for PTFE have been reported in the literature. The species composition and thermodynamic properties are numerically determined using the two-temperature Saha equation and the Guldberg-Waage equation according to van de Sanden et al’s derivation. The transport coefficients, including viscosity, thermal conductivity and electrical conductivity, are calculated with the most recent collision interaction potentials using Devoto’s electron and heavy-particle decoupling approach but expanded to the third-order approximation (second-order for viscosity) in the frame of the Chapman-Enskog method. Results are computed for different degrees of thermal non-equilibrium, i.e. the ratio of electron to heavy-particle temperatures, from 1 to 10, with electron temperature ranging from 300 to 40 000 K. Plasma transport properties in the LTE state obtained from the present work are compared with existing published results and the causes for the discrepancy analyzed. The two-temperature plasma properties calculated in the present work enable the modeling of wall ablation-controlled plasma processes.

Cu-Sn Intermetallic Compound Joints for High-Temperature Power Electronics Applications

NASA Astrophysics Data System (ADS)

Lee, Byung-Suk; Yoon, Jeong-Won

2018-01-01

Cu-Sn solid-liquid interdiffusion (SLID) bonded joints were fabricated using a Sn-Cu solder paste and Cu for high-temperature power electronics applications. The interfacial reaction behaviors and the mechanical properties of Cu6Sn5 and Cu3Sn SLID-bonded joints were compared. The intermetallic compounds formed at the interfaces in the Cu-Sn SLID-bonded joints significantly affected the die shear strength of the joint. In terms of thermal and mechanical properties, the Cu3Sn SLID-bonded joint was superior to the conventional solder and the Cu6Sn5 SLID-bonded joints.

Temperature gradient scale length measurement: A high accuracy application of electron cyclotron emission without calibration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Houshmandyar, S., E-mail: houshmandyar@austin.utexas.edu; Phillips, P. E.; Rowan, W. L.

2016-11-15

Calibration is a crucial procedure in electron temperature (T{sub e}) inference from a typical electron cyclotron emission (ECE) diagnostic on tokamaks. Although the calibration provides an important multiplying factor for an individual ECE channel, the parameter ΔT{sub e}/T{sub e} is independent of any calibration. Since an ECE channel measures the cyclotron emission for a particular flux surface, a non-perturbing change in toroidal magnetic field changes the view of that channel. Hence the calibration-free parameter is a measure of T{sub e} gradient. B{sub T}-jog technique is presented here which employs the parameter and the raw ECE signals for direct measurement ofmore » electron temperature gradient scale length.« less

Measurement of Debye length in laser-produced plasma.

NASA Technical Reports Server (NTRS)

Ehler, W.

1973-01-01

The Debye length of an expanded plasma created by placing an evacuated chamber with an entrance slit in the path of a freely expanding laser produced plasma was measured, using the slab geometry. An independent measurement of electron density together with the observed value for the Debye length also provided a means for evaluating the plasma electron temperature. This temperature has applications in ascertaining plasma conductivity and magnetic field necessary for confinement of the laser produced plasma. Also, the temperature obtained would be useful in analyzing electron-ion recombination rates in the expanded plasma and the dynamics of the cooling process of the plasma expansion.

Importance of Electronic Correlations and Unusual Excitonic Effects in Formamidinium Lead Halide Perovskites

NASA Astrophysics Data System (ADS)

Whitcher, T. J.; Zhu, J.-X.; Chi, X.; Hu, H.; Zhao, Daming; Asmara, T. C.; Yu, X.; Breese, M. B. H.; Castro Neto, A. H.; Lam, Y. M.; Wee, A. T. S.; Chia, Elbert E. M.; Rusydi, A.

2018-04-01

Hybrid inorganic-organic perovskites have recently attracted much interest because of both rich fundamental sciences and potential applications such as the primary energy-harvesting material in solar cells. However, an understanding of electronic and optical properties, particularly the complex dielectric function, of these materials is still lacking. Here, we report on the electronic and optical properties of selective perovskites using temperature-dependent spectroscopic ellipsometry, x-ray absorption spectroscopy supported by first-principles calculations. Surprisingly, the perovskite FA0.85Cs0.15PbI2.9Br0.1 has a very high density of low-energy excitons that increases with increasing temperature even at room temperature, which is not seen in any other material. This is found to be due to the strong, unscreened electron-electron and partially screened electron-hole interactions, which then tightly connect low- and high-energy bands caused by doping.

Bloch-Grüneisen nonlinearity of electron transport in GaAs/AlGaAs heterostructures

DOE PAGES

Raichev, O. E.; Hatke, A. T.; Zudov, M. A.; ...

2017-08-22

We report on nonlinear transport measurements in a two-dimensional electron gas hosted in GaAs/AlGaAs heterostructures. Upon application of direct current, the low-temperature differential resistivity acquires a positive correction, which exhibits a pronounced maximum followed by a plateau. With increasing temperature, the nonlinearity diminishes and disappears. These observations can be understood in terms of a crossover from the Bloch-Gr¨uneisen regime to the quasielastic scattering regime as the electrons are heated by direct current. Calculations considering interaction of electrons with acoustic phonons provide reasonable description of our experimental findings.

Temperature dependences of the time of electron-electron interactions in two-dimensional heterojunction

NASA Astrophysics Data System (ADS)

Bukhenskyy, K. V.; Dubois, A. B.; Kucheryavyy, S. I.; Mashnina, S. N.; Safoshkin, A. S.; Baukov, A. A.; Shchigorev, E. Yu

2017-12-01

The article discusses the joint solution of the Schrödinger and Poisson equations for two-dimensional semiconductor heterojunction. The application of a triangular potential of well approximation for the calculation of the electron-electron interaction is offered in the paper. The influence of the parameters of the selected approximation was analyzed.

Ultra-fast electron capture by electrosterically-stabilized gold nanoparticles.

PubMed

Ghandi, Khashayar; Findlater, Alexander D; Mahimwalla, Zahid; MacNeil, Connor S; Awoonor-Williams, Ernest; Zahariev, Federico; Gordon, Mark S

2015-07-21

Ultra-fast pre-solvated electron capture has been observed for aqueous solutions of room-temperature ionic liquid (RTIL) surface-stabilized gold nanoparticles (AuNPs; ∼9 nm). The extraordinarily large inverse temperature dependent rate constants (k(e)∼ 5 × 10(14) M(-1) s(-1)) measured for the capture of electrons in solution suggest electron capture by the AuNP surface that is on the timescale of, and therefore in competition with, electron solvation and electron-cation recombination reactions. The observed electron transfer rates challenge the conventional notion that radiation induced biological damage would be enhanced in the presence of AuNPs. On the contrary, AuNPs stabilized by non-covalently bonded ligands demonstrate the potential to quench radiation-induced electrons, indicating potential applications in fields ranging from radiation therapy to heterogeneous catalysis.

Observations of temperature rise during electron cyclotron heating application in Proto-MPEX

NASA Astrophysics Data System (ADS)

Biewer, T. M.; Bigelow, T.; Caneses, J. F.; Diem, S. J.; Rapp, J.; Reinke, M.; Kafle, N.; Ray, H. B.; Showers, M.

2017-10-01

The Prototype Material Plasma Exposure eXperiment (Proto-MPEX) at ORNL utilizes a variety of power systems to generate and deliver a high heat flux plasma (1 MW/m2 for these discharges) onto the surface of material targets. In the experiments described here, up to 120 kW of 13.56 MHz ``helicon'' waves are combined with 20 kW of 28 GHz microwaves to produce Deuterium plasma discharges. The 28 GHz waves are launched in a region of the device where the magnetic field is axially varying near 0.8 T, resulting in the presence of a 2nd harmonic electron cyclotron heating (ECH) resonance layer that transects the plasma column. The electron density and temperature profiles are measured using a Thomson scattering (TS) diagnostic, and indicate that the electron density is radially peaked. In the core of the plasma column the electron density is higher than the cut-off density (0.9x1019 m-3) for ECH waves to propagate and O-X-B mode conversion into electron Bernstien waves (EBW) is expected. TS measurements indicate electron temperature increases during 28 GHz wave application, rising (from 5 eV to 20 eV) as the neutral Deuterium pressure is reduced below 1 mTorr. This work was supported by the US. D.O.E. contract DE-AC05-00OR22725.

A compact new incoherent Thomson scattering diagnostic for low-temperature plasma studies

NASA Astrophysics Data System (ADS)

Vincent, Benjamin; Tsikata, Sedina; Mazouffre, Stéphane; Minea, Tiberiu; Fils, Jérôme

2018-05-01

Incoherent Thomson scattering (ITS) has a long history of application for the determination of electron density and temperature in dense fusion plasmas, and in recent years, has been increasingly extended to studies in low-temperature plasma environments. In this work, the design and preliminary implementation of a new, sensitive and uniquely compact ITS platform known as Thomson scattering experiments for low temperature ion sources are described. Measurements have been performed on a hollow cathode plasma source, providing access to electron densities as low as 1016 m‑3 and electron temperatures of a few eV and below. This achievement has been made possible by the implementation of a narrow volume Bragg grating notch filter for the attenuation of stray light, a feature which guarantees compactness and reduced transmission losses in comparison to standard ITS platforms.

Properties and Applications of Varistor-Transistor Hybrid Devices

NASA Astrophysics Data System (ADS)

Pandey, R. K.; Stapleton, William A.; Sutanto, Ivan; Scantlin, Amanda A.; Lin, Sidney

2014-05-01

The nonlinear current-voltage characteristics of a varistor device are modified with the help of external agents, resulting in tuned varistor-transistor hybrid devices with multiple applications. The substrate used to produce these hybrid devices belongs to the modified iron titanate family with chemical formula 0.55FeTiO3·0.45Fe2O3 (IHC45), which is a prominent member of the ilmenite-hematite solid-solution series. It is a wide-bandgap magnetic oxide semiconductor. Electrical resistivity and Seebeck coefficient measurements from room temperature to about 700°C confirm that it retains its p-type nature for the entire temperature range. The direct-current (DC) and alternating-current (AC) properties of these hybrid devices are discussed and their applications identified. It is shown here that such varistor embedded ceramic transistors with many interesting properties and applications can be mass produced using incredibly simple structures. The tuned varistors by themselves can be used for current amplification and band-pass filters. The transistors on the other hand could be used to produce sensors, voltage-controlled current sources, current-controlled voltage sources, signal amplifiers, and low-band-pass filters. We believe that these devices could be suitable for a number of applications in consumer and defense electronics, high-temperature and space electronics, bioelectronics, and possibly also for electronics specific to handheld devices.

Investigation of the temperature dependent field emission from individual ZnO nanowires for evidence of field-induced hot electrons emission.

PubMed

Chen, Yicong; Zhang, Zhipeng; Li, Zhi-Bing; She, Juncong; Deng, Shaozhi; Xu, Ning-Sheng; Chen, Jun

2018-06-27

ZnO nanowires as field emitters have important applications in flat panel display and X-ray source. Understanding the intrinsic field emission mechanism is crucial for further improving the performance of ZnO nanowire field emitters. In this article, the temperature dependent field emission from individual ZnO nanowires was investigated by an in-situ measurement in ultra-high vacuum. The divergent temperature-dependent Fowler-Nordheim plots is found in the low field region. A field-induced hot electrons emission model that takes into account penetration length is proposed to explain the results. The carrier density and temperature dependence of the field-induced hot electrons emission current are derived theoretically. The obtained results are consistent with the experimental results, which could be attributed to the variation of effective electron temperature. All of these are important for a better understanding on the field emission process of semiconductor nanostructures. © 2018 IOP Publishing Ltd.

High-temperature electronics

NASA Technical Reports Server (NTRS)

Seng, Gary T.

1987-01-01

In recent years, there was a growing need for electronics capable of sustained high-temperature operation for aerospace propulsion system instrumentation, control and condition monitoring, and integrated sensors. The desired operating temperature in some applications exceeds 600 C, which is well beyond the capability of currently available semiconductor devices. Silicon carbide displays a number of properties which make it very attractive as a semiconductor material, one of which is the ability to retain its electronic integrity at temperatures well above 600 C. An IR-100 award was presented to NASA Lewis in 1983 for developing a chemical vapor deposition process to grow single crystals of this material on standard silicon wafers. Silicon carbide devices were demonstrated above 400 C, but much work remains in the areas of crystal growth, characterization, and device fabrication before the full potential of silicon carbide can be realized. The presentation will conclude with current and future high-temperature electronics program plans. Although the development of silicon carbide falls into the category of high-risk research, the future looks promising, and the potential payoffs are tremendous.

Microstructure and Sn crystal orientation evolution in Sn-3.5Ag lead-free solders in high temperature packaging applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Bite; Muralidharan, Govindarajan; Kurumaddali, Nalini Kanth

2014-01-01

Understanding the reliability of eutectic Sn-3.5Ag lead-free solders in high temperature packaging applications is of significant interest in power electronics for the next generation electric grid. Large area (2.5mm 2.5mm) Sn-3.5Ag solder joints between silicon dies and direct bonded copper substrates were thermally cycled between 5 C and 200 C. Sn crystal orientation and microstructure evolution during thermal cycling were characterized by electron backscatter diffraction (EBSD) in scanning electron microscope (SEM). Comparisons are made between observed initial texture and microstructure and its evolution during thermal cycling. Gradual lattice rotation and grain boundary misorientation evolution suggested the continuous recrystallization mechanism. Recrystallizationmore » behavior was correlated with dislocation slip activities.« less

Understanding the low temperature electrical properties of nanocrystalline tin oxide for gas sensor applications

NASA Astrophysics Data System (ADS)

Drake, Christina Hartsell

Nanocrystalline metal/metal oxide is an important class of transparent and electronic materials due to its potential use in many applications, including gas sensors. At the nanoscale, many of the phenomena observed that give nanocrystalline semiconducting oxide enhanced performance as a gas sensor material over other conventional engineering materials is still poorly understood. This study is aimed at understanding the low temperature electrical and chemical properties of nanocrystalline SnO2 that makes it suitable for room temperature gas detectors. Studies were carried out in order to understand how various synthesis methods affect the surfaces on the nano-oxides, interactions of a target gas (in this study hydrogen) with different surface species, and changes in the electrical properties as a function of dopants and grain size. A correlation between the surface reactions and the electrical response of doped nanocrystalline metal-oxide-semiconductors exposed to a reducing gas is established using Fourier Transform Infrared (FTIR) Spectroscopy attached to a specially built custom designed catalytic cell. First principle calculations of oxygen vacancy concentrations from absorbance spectra are presented. FTIR is used for effectively screening of these nanostructures for gas sensing applications. The effect of processing temperature on the microstructural evolution and on the electronic properties of nanocrystalline trivalent doped-SnO 2 is also presented. This study includes the effect of dopants (In and Ce) on the growth of nano-SnO2, as well as their effects on the electronic properties and gas sensor behavior of the nanomaterial at room temperature. Band bending affects are also investigated for this system and are related to enhanced low temperature gas sensing. The role and importance of oxygen vacancies in the electronic and chemical behavior of surface modified nanocrystalline SnO2 are explored in this study. A generalized explanation for the low temperature gas sensor behavior of nanocrystalline oxide is presented that can be generalized to other nano-oxide systems and be useful in specific engineering of other nanomaterials. Deeper understanding of how nano-oxides react chemically and electronically would be extremely beneficial to issues present in current low cost, low temperature sensor technology. Ability to exactly monitor and then engineer the chemistry of nanostructures in the space charge region as well as the surface is also of great significance. Knowledge of the mechanisms responsible for enhanced sensor response in this material system could viably be applied to other material systems for sensor applications.

Experiences issues with plastic parts at cold temperatures

NASA Technical Reports Server (NTRS)

Sandor, Mike; Agarwal, Shri

2005-01-01

Missions to MARS/planets/asteroids require electronic parts to operate and survive at extreme cold conditions. At extreme cold temperatures many types of cold related failures can occur. Office 514 is currently evaluating plastic parts under various cold temperature conditions and applications. Evaluations, screens, and qualifications are conducted on flight parts.

Soft x-ray spectroscopy studies of novel electronic materials using synchrotron radiation

NASA Astrophysics Data System (ADS)

Newby, David, Jr.

Soft x-ray spectroscopy can provide a wealth of information on the electronic structure of solids. In this work, a suite of soft x-ray spectroscopies is applied to organic and inorganic materials with potential applications in electronic and energy generation devices. Using the techniques of x-ray absorption (XAS), x-ray emission spectroscopy (XES), and x-ray photoemission spectroscopy (XPS), the fundamental properties of these different materials are explored. Cycloparaphenylenes (CPPs) are a recently synthesized family of cyclic hydrocarbons with very interesting properties and many potential applications. Unusual UV/Visible fluorescence trends have spurred a number of theoretical investigations into the electronic properties of the CPP family, but thus far no comprehensive electronic structure measurements have been conducted. XPS, XAS, and XES data for two varieties, [8]- and [10]-CPP, are presented here, and compared with the results of relevant DFT calculations. Turning towards more application-centered investigations, similar measurements are applied to two materials commonly used in solid oxide fuel cell (SOFC) cathodes: La1-xSrxMnO 3 (LSMO) and La1-xSr1- xCo1-yFe yO3 (LSCF). Both materials are structurally perovskites, but they exhibit strikingly different electronic properties. SOFC systems very efficiently produce electricity by catalyzing reactions between oxygen and petroleum-based hydrocarbons at high temperatures (> 800 C). Such systems are already utilized to great effect in many industries, but more widespread adoption could be had if the cells could operate at lower temperatures. Understanding the electronic structure and operational evolution of the cathode materials is essential for the development of better low-temperature fuel cells. LSCF is a mixed ion-electron conductor which holds promise for low-temperature SOFC applications. XPS spectra of LSCF thin films are collected as the films are heated and gas-dosed in a controlled environment. The surface evolution of these films is discussed, and the effects of different gas environments on oxygen vacancy concentration are elucidated. LSMO is commonly used in commercial fuel cell devices. Here the resonant soft x-ray emission (RIXS) spectrum of LSMO is examined, and it is shown that the inelastic x-ray emission structure of LSMO arises from local atomic multiplet effects.

Electron-Beam Diagnostic Methods for Hypersonic Flow Diagnostics

NASA Technical Reports Server (NTRS)

1994-01-01

The purpose of this work was the evaluation of the use of electron-bean fluorescence for flow measurements during hypersonic flight. Both analytical and numerical models were developed in this investigation to evaluate quantitatively flow field imaging concepts based upon the electron beam fluorescence technique for use in flight research and wind tunnel applications. Specific models were developed for: (1) fluorescence excitation/emission for nitrogen, (2) rotational fluorescence spectrum for nitrogen, (3) single and multiple scattering of electrons in a variable density medium, (4) spatial and spectral distribution of fluorescence, (5) measurement of rotational temperature and density, (6) optical filter design for fluorescence imaging, and (7) temperature accuracy and signal acquisition time requirements. Application of these models to a typical hypersonic wind tunnel flow is presented. In particular, the capability of simulating the fluorescence resulting from electron impact ionization in a variable density nitrogen or air flow provides the capability to evaluate the design of imaging instruments for flow field mapping. The result of this analysis is a recommendation that quantitative measurements of hypersonic flow fields using electron-bean fluorescence is a tractable method with electron beam energies of 100 keV. With lower electron energies, electron scattering increases with significant beam divergence which makes quantitative imaging difficult. The potential application of the analytical and numerical models developed in this work is in the design of a flow field imaging instrument for use in hypersonic wind tunnels or onboard a flight research vehicle.

Synthesis of CoOOH nanorods and application as coating materials of nickel hydroxide for high temperature Ni-MH cells.

PubMed

Hu, W K; Gao, X P; Geng, M M; Gong, Z X; Noréus, D

2005-03-31

Studies on nanoscale materials have received great interest in both fundamental and applied aspects in recent years. In this letter, we report the synthesis of CoOOH nanorods and their possible applications as coating materials on nickel hydroxide for high-temperature nickel-metal hydride (Ni-MH) cells. The morphology and structure of CoOOH nanorods and coated nickel hydroxide particles are investigated by transmission electron microscopy, X-ray diffraction, and scanning electron microscopy, respectively. The electrochemical properties in the cylindrical AA size Ni-MH cells are evaluated. Our results show that the Ni-MH cells, where the positive electrodes are composed of such nanometer sized CoOOH coatings, have a higher capacity available and good performance at elevated temperatures of >50 degrees C.

Laser-Material Interactions for Flexible Applications.

PubMed

Joe, Daniel J; Kim, Seungjun; Park, Jung Hwan; Park, Dae Yong; Lee, Han Eol; Im, Tae Hong; Choi, Insung; Ruoff, Rodney S; Lee, Keon Jae

2017-07-01

The use of lasers for industrial, scientific, and medical applications has received an enormous amount of attention due to the advantageous ability of precise parameter control for heat transfer. Laser-beam-induced photothermal heating and reactions can modify nanomaterials such as nanoparticles, nanowires, and two-dimensional materials including graphene, in a controlled manner. There have been numerous efforts to incorporate lasers into advanced electronic processing, especially for inorganic-based flexible electronics. In order to resolve temperature issues with plastic substrates, laser-material processing has been adopted for various applications in flexible electronics including energy devices, processors, displays, and other peripheral electronic components. Here, recent advances in laser-material interactions for inorganic-based flexible applications with regard to both materials and processes are presented. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waye, Scot

Power electronics that use high-temperature devices pose a challenge for thermal management. With the devices running at higher temperatures and having a smaller footprint, the heat fluxes increase from previous power electronic designs. This project overview presents an approach to examine and design thermal management strategies through cooling technologies to keep devices within temperature limits, dissipate the heat generated by the devices and protect electrical interconnects and other components for inverter, converter, and charger applications. This analysis, validation, and demonstration intends to take a multi-scale approach over the device, module, and system levels to reduce size, weight, and cost.

Diagnostics of AC excited Atmospheric Pressure Plasma Jet with He for Biomedical Applications

NASA Astrophysics Data System (ADS)

Hori, Masaru; Takeda, Keigo; Kumakura, Takumi; Ishikawa, Kenji; Tanaka, Hiromasa; Kondo, Hiroki; Sekine, Makoto; Nakai, Yoshihiro

2014-10-01

Atmospheric pressure plasma jets (APPJ) are frequently used for biomedical applications. Reactive species generated by the APPJ play important roles for treatments of biomedical samples. Therefore, high density APPJ sources are required to realize the high performance. Our group has developed AC excited Ar APPJ with electron density as high as 1015 cm-3, and realized the selective killing of cancer cells and the inactivate spores of Penicillium digitatum. Recently, a new spot-size AC excited APPJ with He gas have been developed. In this study, the He APPJ was characterized by using spectroscopy. The plasma was discharged at a He flow rate of 5 slm and a discharge voltage of AC 9 kV. Gas temperature and electron density of the APPJ were measured by optical emission spectroscopy. From theoretical fitting of 2nd positive system of N2 emission (380.4 nm) and Stark broadening of Balmer β line of H atom (486.1 nm), the gas temperature and the electron density was estimated to be 299 K and 3.4. × 1015 cm-3. The AC excited He APPJ has a potential to realize high density with room temperature and become a very powerful tool for biomedical applications.

Size-dependent phase transition in methylammonium lead iodide perovskite microplate crystals

PubMed Central

Li, Dehui; Wang, Gongming; Cheng, Hung-Chieh; Chen, Chih-Yen; Wu, Hao; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2016-01-01

Methylammonium lead iodide perovskite has attracted considerable recent interest for solution processable solar cells and other optoelectronic applications. The orthorhombic-to-tetragonal phase transition in perovskite can significantly alter its optical, electrical properties and impact the corresponding applications. Here, we report a systematic investigation of the size-dependent orthorhombic-to-tetragonal phase transition using a combined temperature-dependent optical, electrical transport and transmission electron microscopy study. Our studies of individual perovskite microplates with variable thicknesses demonstrate that the phase transition temperature decreases with reducing microplate thickness. The sudden decrease of mobility around phase transition temperature and the presence of hysteresis loops in the temperature-dependent mobility confirm that the orthorhombic-to-tetragonal phase transition is a first-order phase transition. Our findings offer significant fundamental insight on the temperature- and size-dependent structural, optical and charge transport properties of perovskite materials, and can greatly impact future exploration of novel electronic and optoelectronic devices from these materials. PMID:27098114

Size-dependent phase transition in methylammonium lead iodide perovskite microplate crystals

DOE PAGES

Li, Dehui; Wang, Gongming; Cheng, Hung -Chieh; ...

2016-04-21

Methylammonium lead iodide perovskite has attracted considerable recent interest for solution processable solar cells and other optoelectronic applications. The orthorhombic-to-tetragonal phase transition in perovskite can significantly alter its optical, electrical properties and impact the corresponding applications. Here, we report a systematic investigation of the size-dependent orthorhombic-to-tetragonal phase transition using a combined temperature-dependent optical, electrical transport and transmission electron microscopy study. Our studies of individual perovskite microplates with variable thicknesses demonstrate that the phase transition temperature decreases with reducing microplate thickness. The sudden decrease of mobility around phase transition temperature and the presence of hysteresis loops in the temperature-dependent mobility confirmmore » that the orthorhombic-to-tetragonal phase transition is a first-order phase transition. Lastly, our findings offer significant fundamental insight on the temperature-and size-dependent structural, optical and charge transport properties of perovskite materials, and can greatly impact future exploration of novel electronic and optoelectronic devices from these materials.« less

Development of Electronics for Low-Temperature Space Missions

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Dickman, John E.; Gerber, Scott S.; Overton, Eric

2001-01-01

Electronic systems that are capable of operating at cryogenic temperatures will be needed for many future NASA space missions, including deep space probes and spacecraft for planetary surface exploration. In addition to being able to survive the harsh deep space environment, low-temperature electronics would help improve circuit performance, increase system efficiency, and reduce payload development and launch costs. Terrestrial applications where components and systems must operate in low-temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation systems, and arctic exploration. An ongoing research and development project for the design, fabrication, and characterization of low-temperature electronics and supporting technologies at NASA Glenn Research Center focuses on efficient power systems capable of surviving in and exploiting the advantages of low-temperature environments. Supporting technologies include dielectric and insulating materials, semiconductor devices, passive power components, optoelectronic devices, and packaging and integration of the developed components into prototype flight hardware. An overview of the project is presented, including a description of the test facilities, a discussion of selected data from component testing, and a presentation of ongoing research activities being performed in collaboration with various organizations.

Leakage conduction behavior in electron-beam-cured nanoporous silicate films

NASA Astrophysics Data System (ADS)

Liu, Po-Tsun; Tsai, T. M.; Chang, T. C.

2005-05-01

This letter explores the application of electron-beam curing on nanoporous silicate films. The electrical conduction mechanism for the nanoporous silicate film cured by electron-beam radiation has been studied with metal-insulator-semiconductor capacitors. Electrical analyses over a varying temperature range from room temperature to 150°C provide evidence for space-charge-limited conduction in the electron-beam-cured thin film, while Schottky-emission-type leaky behavior is seen in the counterpart typically cured by a thermal furnace. A physical model consistent with electrical analyses is also proposed to deduce the origin of conduction behavior in the nanoporous silicate thin film.

High efficiency digital cooler electronics for aerospace applications

NASA Astrophysics Data System (ADS)

Kirkconnell, C. S.; Luong, T. T.; Shaw, L. S.; Murphy, J. B.; Moody, E. A.; Lisiecki, A. L.; Ellis, M. J.

2014-06-01

Closed-cycle cryogenic refrigerators, or cryocoolers, are an enabling technology for a wide range of aerospace applications, mostly related to infrared (IR) sensors. While the industry focus has tended to be on the mechanical cryocooler thermo mechanical unit (TMU) alone, implementation on a platform necessarily consists of the combination of the TMU and a mating set of command and control electronics. For some applications the cryocooler electronics (CCE) are technologically simple and low cost relative to the TMU, but this is not always the case. The relative cost and complexity of the CCE for a space-borne application can easily exceed that of the TMU, primarily due to the technical constraints and cost impacts introduced by the typical space radiation hardness and reliability requirements. High end tactical IR sensor applications also challenge the state of the art in cryocooler electronics, such as those for which temperature setpoint and frequency must be adjustable, or those where an informative telemetry set must be supported, etc. Generally speaking for both space and tactical applications, it is often the CCE that limits the rated lifetime and reliability of the cryocooler system. A family of high end digital cryocooler electronics has been developed to address these needs. These electronics are readily scalable from 10W to 500W output capacity; experimental performance data for nominally 25W and 100W variants are presented. The combination of a FPGA-based controller and dual H-bridge motor drive architectures yields high efficiency (>92% typical) and precision temperature control (+/- 30 mK typical) for a wide range of Stirling-class mechanical cryocooler types and vendors. This paper focuses on recent testing with the AIM INFRAROT-MODULE GmbH (AIM) SX030 and AIM SF100 cryocoolers.

Tungsten as a Chemically-Stable Electrode Material on Ga-Containing Piezoelectric Substrates Langasite and Catangasite for High-Temperature SAW Devices

PubMed Central

Rane, Gayatri K.; Seifert, Marietta; Menzel, Siegfried; Gemming, Thomas; Eckert, Jürgen

2016-01-01

Thin films of tungsten on piezoelectric substrates La3Ga5SiO14 (LGS) and Ca3TaGa3Si2O14 (CTGS) have been investigated as a potential new electrode material for interdigital transducers for surface acoustic wave-based sensor devices operating at high temperatures up to 800 °C under vacuum conditions. Although LGS is considered to be suitable for high-temperature applications, it undergoes chemical and structural transformation upon vacuum annealing due to diffusion of gallium and oxygen. This can alter the device properties depending on the electrode nature, the annealing temperature, and the duration of the application. Our studies present evidence for the chemical stability of W on these substrates against the diffusion of Ga/O from the substrate into the film, even upon annealing up to 800 °C under vacuum conditions using Auger electron spectroscopy and energy-dispersive X-ray spectroscopy, along with local studies using transmission electron microscopy. Additionally, the use of CTGS as a more stable substrate for such applications is indicated. PMID:28787898

Electronics Demonstrated for Low- Temperature Operation

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammond, Ahmad; Gerber, Scott S.

2000-01-01

The operation of electronic systems at cryogenic temperatures is anticipated for many NASA spacecraft, such as planetary explorers and deep space probes. For example, an unheated interplanetary probe launched to explore the rings of Saturn would experience an average temperature near Saturn of about 183 C. Electronics capable of low-temperature operation in the harsh deep space environment also would help improve circuit performance, increase system efficiency, and reduce payload development and launch costs. An ongoing research and development program on low-temperature electronics at the NASA Glenn Research Center at Lewis Field is focusing on the design of efficient power systems that can survive and exploit the advantages of low-temperature environments. The targeted systems, which are mission driven, include converters, inverters, controls, digital circuits, and special-purpose circuits. Initial development efforts successfully demonstrated the low-temperature operation and cold-restart of several direct-current/direct-current (dc/dc) converters based on different types of circuit design, some with superconducting inductors. The table lists some of these dc/dc converters with their properties, and the photograph shows a high-voltage, high-power dc/dc converter designed for an ion propulsion system for low-temperature operation. The development efforts of advanced electronic systems and the supporting technologies for low-temperature operation are being carried out in-house and through collaboration with other Government agencies, industry, and academia. The Low Temperature Electronics Program supports missions and development programs at NASA s Jet Propulsion Laboratory and Goddard Space Flight Center. The developed technologies will be transferred to commercial end users for applications such as satellite infrared sensors and medical diagnostic equipment.

Solution-processed polycrystalline silicon on paper

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trifunovic, M.; Ishihara, R., E-mail: r.ishihara@tudelft.nl; Shimoda, T.

Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their printability, while these materials lack in the electronic performance when compared to silicon electronics. Silicon electronics, on the other hand, has only recently found their way in solution processes. Printing of cyclopentasilane as the silicon ink has been conducted and devices with far superior electric performance have been mademore » when compared to other ink materials. A thermal annealing step of this material, however, was necessary, which prevented its usage on inexpensive substrates with a limited thermal budget. In this work, we introduce a method that allows polycrystalline silicon (poly-Si) production directly from the same liquid silicon ink using excimer laser irradiation. In this way, poly-Si could be formed directly on top of paper even with a single laser pulse. Using this method, poly-Si transistors were created at a maximum temperature of only 150 °C. This method allows silicon device formation on inexpensive, temperature sensitive substrates such as polyethylene terephthalate, polyethylene naphthalate or paper, which leads to applications that require low-cost but high-speed electronics.« less

Quantum electron-vibrational dynamics at finite temperature: Thermo field dynamics approach

NASA Astrophysics Data System (ADS)

Borrelli, Raffaele; Gelin, Maxim F.

2016-12-01

Quantum electron-vibrational dynamics in molecular systems at finite temperature is described using an approach based on the thermo field dynamics theory. This formulation treats temperature effects in the Hilbert space without introducing the Liouville space. A comparison with the theoretically equivalent density matrix formulation shows the key numerical advantages of the present approach. The solution of thermo field dynamics equations with a novel technique for the propagation of tensor trains (matrix product states) is discussed. Numerical applications to model spin-boson systems show that the present approach is a promising tool for the description of quantum dynamics of complex molecular systems at finite temperature.

Soft x-ray continuum radiation transmitted through metallic filters: an analytical approach to fast electron temperature measurements.

PubMed

Delgado-Aparicio, L; Tritz, K; Kramer, T; Stutman, D; Finkenthal, M; Hill, K; Bitter, M

2010-10-01

A new set of analytic formulas describes the transmission of soft x-ray continuum radiation through a metallic foil for its application to fast electron temperature measurements in fusion plasmas. This novel approach shows good agreement with numerical calculations over a wide range of plasma temperatures in contrast with the solutions obtained when using a transmission approximated by a single-Heaviside function [S. von Goeler et al., Rev. Sci. Instrum. 70, 599 (1999)]. The new analytic formulas can improve the interpretation of the experimental results and thus contribute in obtaining fast temperature measurements in between intermittent Thomson scattering data.

Characterization of a Two-Stage Pulse Tube Cooler for Space Applications

NASA Astrophysics Data System (ADS)

Orsini, R.; Nguyen, T.; Colbert, R.; Raab, J.

2010-04-01

A two-stage long-life, low mass and efficient pulse tube cooler for space applications has been developed and acceptance tested for flight applications. This paper presents the data collected on four flight coolers during acceptance testing. Flight acceptance test of these cryocoolers includes thermal performance mapping over a range of reject temperatures, launch vibration testing and thermal cycling testing. Designed conservatively for a 10-year life, the coolers are required to provide simultaneous cooling powers at 95 K and 180 K while rejecting to 300 K with less than 187 W input power to the electronics. The total mass of each cooler and electronics system is 8.7 kg. The radiation-hardened and software driven control electronics provides cooler control functions which are fully re-configurable in orbit. These functions include precision temperature control to better than 100 mK p-p. This 2 stage cooler has heritage to the 12 Northrop Grumman Aerospace Systems (NGAS) coolers currently on orbit with 2 operating for more than 11.5 years.

Irradiation-induced β to α SiC transformation at low temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parish, Chad M.; Koyanagi, Takaaki; Kondo, Sosuke

Here, we observed that β-SiC, neutron irradiated to 9 dpa (displacements per atom) at ≈1440 °C, began transforming to α-SiC, with radiation-induced Frank dislocation loops serving as the apparent nucleation sites. 1440 °C is a far lower temperature than usual β → α phase transformations in SiC. SiC is considered for applications in advanced nuclear systems, as well as for electronic or spintronic applications requiring ion irradiation processing. β-SiC, preferred for nuclear applications, is metastable and undergoes a phase transformation at high temperatures (typically 2000 °C and above). Nuclear reactor concepts are not expected to reach the very high temperaturesmore » for thermal transformation. However, our results indicate incipient β → α phase transformation, in the form of small (~5–10 nm) pockets of α-SiC forming in the β matrix. In service transformation could degrade structural stability and fuel integrity for SiC-based materials operated in this regime. However, engineering this transformation deliberately using ion irradiation could enable new electronic applications.« less

Irradiation-induced β to α SiC transformation at low temperature

DOE PAGES

Parish, Chad M.; Koyanagi, Takaaki; Kondo, Sosuke; ...

2017-04-26

Here, we observed that β-SiC, neutron irradiated to 9 dpa (displacements per atom) at ≈1440 °C, began transforming to α-SiC, with radiation-induced Frank dislocation loops serving as the apparent nucleation sites. 1440 °C is a far lower temperature than usual β → α phase transformations in SiC. SiC is considered for applications in advanced nuclear systems, as well as for electronic or spintronic applications requiring ion irradiation processing. β-SiC, preferred for nuclear applications, is metastable and undergoes a phase transformation at high temperatures (typically 2000 °C and above). Nuclear reactor concepts are not expected to reach the very high temperaturesmore » for thermal transformation. However, our results indicate incipient β → α phase transformation, in the form of small (~5–10 nm) pockets of α-SiC forming in the β matrix. In service transformation could degrade structural stability and fuel integrity for SiC-based materials operated in this regime. However, engineering this transformation deliberately using ion irradiation could enable new electronic applications.« less

Evaluation of Silicon-on-Insulator HTOP-01 Operational Amplifier for Wide Temperature Operation

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Electronics capable of operation under extreme temperatures are required in many of NASA space exploration missions. Aerospace and military applications, as well as some terrestrial industries constitute environments where electronic systems are anticipated to be exposed to extreme temperatures and wide-range thermal swings. Electronics that are able to withstand and operate efficiently in such harsh environments would simplify, if not eliminate, traditional thermal control elements and their associated structures for proper ambient operation. As a result, overall system mass would be reduced, design would be simplified, and reliability would be improved. Electronic parts that are built utilizing silicon-on-insulator (SOI) technology are known to offer better radiation-tolerance compared to their conventional silicon counterparts, provide faster switching, and consume less power. They also exhibit reduced leakage current and, thus, they are often tailored for high temperature operation. These attributes make SOI-based devices suitable for use in harsh environments where extreme temperatures and wide thermal swings are anticipated. A new operational amplifier, based on silicon-on-insulator technology and geared for high temperature well-logging applications, was recently introduced by Honeywell Corporation. This HTOP-01 dual precision operational amplifier is a low power device, operates on a single supply, and has an internal oscillator and an external clocking option [1]. It is rated for operation from -55 C to +225 C with a maximum output current capability of 50 mA. The amplifier chip is designed as a 14-pin, hermetically-sealed device in a ceramic package. Table I shows some of the device manufacturer s specifications.

Multi-environment Nanocalorimeter with Electrical Contacts for Use in the Scanning Electron Microscope.

PubMed

Yi, Feng; Stevanovic, Ana; Osborn, William A; Kolmakov, A; LaVan, David A

2017-11-01

We have developed a versatile nanocalorimeter sensor which allows imaging and electrical measurements of samples under different gaseous environments using the scanning electron microscope (SEM) and can simultaneously measure the sample temperature and associated heat of reaction. This new sensor consists of four independent heating/sensing elements for nanocalorimetry and eight electrodes for electrical measurements, all mounted on a 50 nm thick, 250 μm × 250 μm suspended silicon nitride membrane. This membrane is highly electron transparent and mechanically robust enabling in situ SEM observation under realistic temperatures, environmental conditions and pressures up to one atmosphere. To demonstrate this new capability, we report here on 1) in situ SEM-nanocalorimetry study of melting and solidification of polyethylene oxide, 2) the temperature dependence of conductivity of a nanowire; 3) the electron beam induced current measurements (EBID) of a nanowire in vacuum and air. Furthermore, the sensor is easily adaptable to operate in liquid environment and is compatible with most existing SEM. This versatile platform couples nanocalorimetry with in situ SEM imaging under various gaseous and liquid environments and is applicable to materials research, nanotechnology, energy, catalysis and biomedical applications.

Achieving High Current Density of Perovskite Solar Cells by Modulating the Dominated Facets of Room-Temperature DC Magnetron Sputtered TiO2 Electron Extraction Layer.

PubMed

Huang, Aibin; Lei, Lei; Zhu, Jingting; Yu, Yu; Liu, Yan; Yang, Songwang; Bao, Shanhu; Cao, Xun; Jin, Ping

2017-01-25

The short circuit current density of perovskite solar cell (PSC) was boosted by modulating the dominated plane facets of TiO 2 electron transport layer (ETL). Under optimized condition, TiO 2 with dominant {001} facets showed (i) low incident light loss, (ii) highly smooth surface and excellent wettability for precursor solution, (iii) efficient electron extraction, and (iv) high conductivity in perovskite photovoltaic application. A current density of 24.19 mA cm -2 was achieved as a value near the maximum limit. The power conversion efficiency was improved to 17.25%, which was the record value of PSCs with DC magnetron sputtered carrier transport layer. What is more, the room-temperature process had a great significance for the cost reduction and flexible application of PSCs.

Determination of Low C Concentration in Czochralski-Grown Si for Solar Cell Applications by Liquid-N-Temperature Photoluminescence After Electron Irradiation

NASA Astrophysics Data System (ADS)

Tajima, Michio; Kiuchi, Hirotatsu; Higuchi, Fumito; Ishikawa, Yoichiro; Ogura, Atsushi

2018-05-01

The effectiveness of liquid-N-temperature photoluminescence (PL) after electron irradiation for quantification of low-level C has been demonstrated in Czochralski (CZ)-grown Si for solar cell applications. We focused on the intensity ratios of the C- and G-lines to the band-edge emission, which were used as indexes for determining the C concentration in the PL activation method at 4.2 K. Good correlations of the ratio between 4.2 K and 77 K were obtained for samples with similar P and O concentrations after electron irradiation at fluence varying from 1 × 1015 cm-2 to 10 × 1015 cm-2. We applied the present method to quantify the C concentration along the solidified fraction in CZ-Si ingots.

Potting procedure for electronic components

NASA Technical Reports Server (NTRS)

Rubino, A. G.; Zimmerman, J.

1977-01-01

Potting process is modified to effect a match more closely between embedded electronic components, potting mediums, and thermal environment. Application of room-temperature vulcanizing silicone rubber band cured in modified thermal cycle minimizes coil-to-resin adhesion and thus lowers stresses between transformer and potting compound.

An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Okojie, Robert S.; Chen, Liangyu; Spry, D.; Trunek, A.

2007-01-01

A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

Quantitative Probes of Electron-Phonon Coupling in an Organic Charge-Transfer Material

NASA Astrophysics Data System (ADS)

Rury, Aaron; Sorenson, Shayne; Driscoll, Eric; Dawlaty, Jahan

While organic charge transfer (CT) materials may provide alternatives to inorganic materials in electronics and photonics applications, properties central to applications remain understudied in these organic materials. Specifically, electron-phonon coupling plays a pivotal role in electronic applications yet this coupling in CT materials remains difficult to directly characterize. To better understand the suitability of organic CT materials for electronic applications, we have devised an experimental technique that can directly assess electron-phonon coupling in a model organic CT material. Upon non-resonant interaction with an ultrafast laser pulse, we show that coherent excitation of Raman-active lattice vibrations of quinhydrone, a 1:1 co-crystal of the hydroquinone and p-benzoquinone, modulates the energies of electronic transitions probed by a white light pulse. Using a well-established theoretical framework of vibrational quantum beat spectra across the probe bandwidth, we quantitatively extract the parameters describing these electronic transitions to characterize electron-phonon coupling in this material. In conjunction with temperature-dependent resonance Raman measurements, we assess the hypothesis that several sharp transitions in the near-IR correspond to previously unknown excitonic states of this material. These results and their interpretation set the foundation for further elucidation of the one of the most important parameters in the application of organic charge-transfer materials to electronics and photonics.

Colossal photo-conductive gain in low temperature processed TiO2 films and their application in quantum dot solar cells

NASA Astrophysics Data System (ADS)

Mandal, Debranjan; Goswami, Prasenjit N.; Rath, Arup K.

2017-03-01

Colloidal quantum dot (QD) solar cells have seen remarkable progress in recent past to reach the certified efficiency of 10.6%. Anatase titanium oxide (TiO2) is a widely studied n-type widow layer for the collection of photogenerated electrons in QD solar cells. Requirement of high temperature (˜500 °C) processing steps proved to be disadvantageous for its applications in flexible solar cells and roll to roll processing, and it also has adverse commercial implications. Here, we report that solar light exposure to low temperature processed (80 °C-150 °C) TiO2 and niobium doped TiO2 films leads to unprecedented enhancement in their electron densities and electron mobilities, which enables them to be used as efficient n-type layers in quantum dot solar cells. Such photoinduced high conducting states in these films show gradual decay over hours after the light bias is taken off and can be retrieved under solar illumination. On the contrary, TiO2 films processed at 500 °C show marginal photo induced enhancements in their characteristics. In bilayer configuration with PbS QDs, photovoltaic devices based on low temperature processed TiO2 films show improved performance over high temperature processed TiO2 films. The stability of photovoltaic devices also improved in low temperature processed TiO2 films under ambient working conditions.

High Temperature Wireless Communication And Electronics For Harsh Environment Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Beheim, G. M.; Ponchak, G. E.; Chen, L.-Y

2007-01-01

In order for future aerospace propulsion systems to meet the increasing requirements for decreased maintenance, improved capability, and increased safety, the inclusion of intelligence into the propulsion system design and operation becomes necessary. These propulsion systems will have to incorporate technology that will monitor propulsion component conditions, analyze the incoming data, and modify operating parameters to optimize propulsion system operations. This implies the development of sensors, actuators, and electronics, with associated packaging, that will be able to operate under the harsh environments present in an engine. However, given the harsh environments inherent in propulsion systems, the development of engine-compatible electronics and sensors is not straightforward. The ability of a sensor system to operate in a given environment often depends as much on the technologies supporting the sensor element as the element itself. If the supporting technology cannot handle the application, then no matter how good the sensor is itself, the sensor system will fail. An example is high temperature environments where supporting technologies are often not capable of operation in engine conditions. Further, for every sensor going into an engine environment, i.e., for every new piece of hardware that improves the in-situ intelligence of the components, communication wires almost always must follow. The communication wires may be within or between parts, or from the engine to the controller. As more hardware is added, more wires, weight, complexity, and potential for unreliability is also introduced. Thus, wireless communication combined with in-situ processing of data would significantly improve the ability to include sensors into high temperature systems and thus lead toward more intelligent engine systems. NASA Glenn Research Center (GRC) is presently leading the development of electronics, communication systems, and sensors capable of prolonged stable operation in harsh 500C environments. This has included world record operation of SiC-based transistor technology (including packaging) that has demonstrated continuous electrical operation at 500C for over 2000 hours. Based on SiC electronics, development of high temperature wireless communication has been on-going. This work has concentrated on maturing the SiC electronic devices for communication purposes as well as the passive components such as resistors and capacitors needed to enable a high temperature wireless system. The objective is to eliminate wires associated with high temperature sensors which add weight to a vehicle and can be a cause of sensor unreliability. This paper discusses the development of SiC based electronics and wireless communications technology for harsh environment applications such as propulsion health management systems and in Venus missions. A brief overview of the future directions in sensor technology is given including maturing of near-room temperature "Lick and Stick" leak sensor technology for possible implementation in the Crew Launch Vehicle program. Then an overview of high temperature electronics and the development of high temperature communication systems is presented. The maturity of related technologies such as sensor and packaging will also be discussed. It is concluded that a significant component of efforts to improve the intelligence of harsh environment operating systems is the development and implementation of high temperature wireless technology

Ionic thermoelectric gating organic transistors

PubMed Central

Zhao, Dan; Fabiano, Simone; Berggren, Magnus; Crispin, Xavier

2017-01-01

Temperature is one of the most important environmental stimuli to record and amplify. While traditional thermoelectric materials are attractive for temperature/heat flow sensing applications, their sensitivity is limited by their low Seebeck coefficient (∼100 μV K−1). Here we take advantage of the large ionic thermoelectric Seebeck coefficient found in polymer electrolytes (∼10,000 μV K−1) to introduce the concept of ionic thermoelectric gating a low-voltage organic transistor. The temperature sensing amplification of such ionic thermoelectric-gated devices is thousands of times superior to that of a single thermoelectric leg in traditional thermopiles. This suggests that ionic thermoelectric sensors offer a way to go beyond the limitations of traditional thermopiles and pyroelectric detectors. These findings pave the way for new infrared-gated electronic circuits with potential applications in photonics, thermography and electronic-skins. PMID:28139738

Electronics for Low Temperature Space Exploration Missions

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Elbuluk, Malik

2007-01-01

Exploration missions to outer planets and deep space require spacecraft, probes, and on-board data and communication systems to operate reliably and efficiently under severe harsh conditions. On-board electronics, in particular those in direct exposures to the space environment without any shielding or protection, will encounter extreme low temperature and thermal cycling in their service cycle in most of NASA s upcoming exploration missions. For example, Venus atmosphere, Jupiter atmosphere, Moon surface, Pluto orbiter, Mars, comets, Titan, Europa, and James Webb Space Telescope all involve low-temperature surroundings. Therefore, electronics for space exploration missions need to be designed for operation under such environmental conditions. There are ongoing efforts at the NASA Glenn Research Center (GRC) to establish a database on the operation and reliability of electronic devices and circuits under extreme temperature operation for space applications. This work is being performed under the Extreme Temperature Electronics Program with collaboration and support of the NASA Electronic Parts and Packaging (NEPP) Program. The results of these investigations will be used to establish safe operating areas and to identify degradation and failure modes, and the information will be disseminated to mission planners and system designers for use as tools for proper part selection and in risk mitigation. An overview of this program along with experimental data will be presented.

A strong and flexible electronic vessel for real-time monitoring of temperature, motions and flow.

PubMed

Zhang, Wei; Hou, Chengyi; Li, Yaogang; Zhang, Qinghong; Wang, Hongzhi

2017-11-23

Flexible and multifunctional sensors that continuously detect physical information are urgently required to fabricate wearable materials for health monitoring. This study describes the fabrication and performance of a strong and flexible vessel-like sensor. This electronic vessel consists of a self-supported braided cotton hose substrate, single-walled carbon nanotubes (SWCNTs)/ZnO@polyvinylidene fluoride (PVDF) function arrays and a flexible PVDF function fibrous membrane, and it possesses high mechanical property and accurate physical sensing. The rationally designed tubular structure facilities the detection of the applied temperature and strain and the frequency, pressure, and temperature of pulsed fluids. Therefore, the flexible electronic vessel holds promising potential for applications in wearable or implantable materials for the monitoring of health.

Temperature grid sensor for the measurement of spatial temperature distributions at object surfaces.

PubMed

Schäfer, Thomas; Schubert, Markus; Hampel, Uwe

2013-01-25

This paper presents results of the development and application of a new temperature grid sensor based on the wire-mesh sensor principle. The grid sensor consists of a matrix of 256 Pt1000 platinum chip resistors and an associated electronics that measures the grid resistances with a multiplexing scheme at high speed. The individual sensor elements can be spatially distributed on an object surface and measure transient temperature distributions in real time. The advantage compared with other temperature field measurement approaches such as infrared cameras is that the object under investigation can be thermally insulated and the radiation properties of the surface do not affect the measurement accuracy. The sensor principle is therefore suited for various industrial monitoring applications. Its applicability for surface temperature monitoring has been demonstrated through heating and mixing experiments in a vessel.

Electron Irradiation Effects on Nanocrystal Quantum Dots Used in Bio-Sensing Applications

NASA Technical Reports Server (NTRS)

Leon, R.; Nadeau, J.; Evans, K.; Paskova, T.; Monemar, B.

2004-01-01

Effects of electron irradiation on some of the optical properties in organic CdSe nanocrystals coated in trioctylphosphine oxide (TOPO) and biologically compatible CdSe nanocrystals coated in mercaptoacetic acid, as CdSe as CdSe nanocrystals conjugated with the protein are investigated using the technique of cathodoluminescence. Effects of varying the beam energy and temperatures were examined and faster degradation at cryogenic temperatures and higher beam energies was found under some conditions.

Explicit accounting of electronic effects on the Hugoniot of porous materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nayak, Bishnupriya; Menon, S. V. G., E-mail: menon.svg98@gmail.com

2016-03-28

A generalized enthalpy based equation of state, which includes thermal electron excitations explicitly, is formulated from simple considerations. Its application to obtain Hugoniot of materials needs simultaneous evaluation of pressure-volume curve and temperature, the latter requiring solution of a differential equation. The errors involved in two recent papers [Huayun et al., J. Appl. Phys. 92, 5917 (2002); 92, 5924 (2002)], which employed this approach, are brought out and discussed. In addition to developing the correct set of equations, the present work also provides a numerical method to implement this approach. Constant pressure specific heat of ions and electrons and ionicmore » enthalpy parameter, needed for applications, are calculated using a three component equation of state. The method is applied to porous Cu with different initial porosities. Comparison of results with experimental data shows good agreement. It is found that temperatures along the Hugoniot of porous materials are significantly modified due to electronic effects.« less

Understanding local degradation of cycled Ni-rich cathode materials at high operating temperature for Li-ion batteries

NASA Astrophysics Data System (ADS)

Hwang, Sooyeon; Kim, Dong Hyun; Chung, Kyung Yoon; Chang, Wonyoung

2014-09-01

We utilize transmission electron microscopy in conjunction with electron energy loss spectroscopy to investigate local degradation that occurs in LixNi0.8Co0.15Al0.05O2 cathode materials (NCA) after 30 cycles with cutoff voltages of 4.3 V and 4.8 V at 55 °C. NCA has a homogeneous crystallographic structure before electrochemical reactions; however, we observed that 30 cycles of charge/discharge reactions induced inhomogeneity in the crystallographic and electronic structures and also introduced porosity particularly at surface area. These changes were more noticeable in samples cycled with higher cutoff voltage of 4.8 V. Effect of operating temperature was further examined by comparing electronic structures of oxygen of the NCA particles cycled at both room temperature and 55 °C. The working temperature has a greater impact on the NCA cathode materials at a cutoff voltage of 4.3 V that is the practical the upper limit voltage in most applications, while a cutoff voltage of 4.8 V is high enough to cause surface degradation even at room temperature.

Nanocrystals for electronics.

PubMed

Panthani, Matthew G; Korgel, Brian A

2012-01-01

Semiconductor nanocrystals are promising materials for low-cost large-area electronic device fabrication. They can be synthesized with a wide variety of chemical compositions and size-tunable optical and electronic properties as well as dispersed in solvents for room-temperature deposition using various types of printing processes. This review addresses research progress in large-area electronic device applications using nanocrystal-based electrically active thin films, including thin-film transistors, light-emitting diodes, photovoltaics, and thermoelectrics.

Characterizing the temperature dependence of electronic packaging-material properties

NASA Astrophysics Data System (ADS)

Fu, Chia-Yu; Ume, Charles

1995-06-01

A computer-controlled, temperature-dependent material characterization system has been developed for thermal deformation analysis in electronic packaging applications, especially for printed wiring assembly warpage study. For fiberglass-reinforced epoxy (FR-4 type) material, the Young's moduli decrease to as low as 20-30% of the room-temperature values, while the shear moduli decrease to as low as 60-70% of the room-temperature values. The electrical resistance strain gage technique was used in this research. The test results produced overestimated values in property measurements, and this was shown in a case study. A noncontact strau]n measurement technique (laser extensometer) is now being used to measure these properties. Discrepancies of finite-element warpage predictions using different property values increase as the temperature increases from the stress-free temperature.

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Almad

2009-01-01

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

A Brief Overview of NASA Glenn Research Center Sensor and Electronics Activities

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

2012-01-01

Aerospace applications require a range of sensing technologies. There is a range of sensor and sensor system technologies being developed using microfabrication and micromachining technology to form smart sensor systems and intelligent microsystems. Drive system intelligence to the local (sensor) level -- distributed smart sensor systems. Sensor and sensor system development examples: (1) Thin-film physical sensors (2) High temperature electronics and wireless (3) "lick and stick" technology. NASA GRC is a world leader in aerospace sensor technology with a broad range of development and application experience. Core microsystems technology applicable to a range of application environmentS.

Control of magnetism in Co by an electric field

NASA Astrophysics Data System (ADS)

Chiba, D.; Ono, T.

2013-05-01

In this paper, we review the recent experimental developments on electric-field switching of ferromagnetism in ultra-thin Co films. The application of an electric field changes the electron density at the surface of the Co film, which results in modulation of its Curie temperature. A capacitor structure consisting of a gate electrode, a solid-state dielectric insulator and a Co bottom electrode is used to observe the effect. To obtain a larger change in the electron density, we also fabricated an electric double-layer capacitor structure using an ionic liquid. A large change in the Curie temperature of ∼100 K across room temperature is achieved with this structure. The application of the electric field influences not only the Curie temperature but also the domain-wall motion. A change in the velocity of a domain wall prepared in a Co micro-wire of more than one order of magnitude is observed. Possible mechanisms to explain the above-mentioned electric-field effects in Co ultra-thin films are discussed.

Transition region response of the symmetric double probe and its application in the lower ionosphere

NASA Technical Reports Server (NTRS)

Szuszczewicz, E. P.

1972-01-01

The technique is discussed of the symmetric double-probe which readily lends itself to the in situ measurement of plasma temperature in the ionospheric D-region because it can lead to meaningful results under relatively high collision frequencies where the Langmuir probe has been observed to fail. It is shown that the modification to the original collision-free double-probe theory of Johnson and Malter for the determination of electron temperature is never greater than + or - 12%, with a value of (8 + or - 2)% nominally applicable in the case of D-region diagnostics. This technique was successfully operated on a Nike-Cajun payload flown at mid-day from White Sands, New Mexico to an apogee of 78.5 km. The associated electronics and deployed double-probe configuration are presented, and a current-voltage characteristic collected in the ascent stage at 73.7 km is briefly discussed. The values of electron temperature indicated by the sampled data are approximately 30% higher than those predicted by theory for the anticipated state of thermal equilibrium with the ambient neutrals.

Electronic anisotropies revealed by detwinned angle-resolved photo-emission spectroscopy measurements of FeSe

NASA Astrophysics Data System (ADS)

Watson, Matthew D.; Haghighirad, Amir A.; Rhodes, Luke C.; Hoesch, Moritz; Kim, Timur K.

2017-10-01

We report high resolution angle-resolved photo-emission spectroscopy (ARPES) measurements of detwinned FeSe single crystals. The application of a mechanical strain is used to promote the volume fraction of one of the orthorhombic domains in the sample, which we estimate to be 80 % detwinned. While the full structure of the electron pockets consisting of two crossed ellipses may be observed in the tetragonal phase at temperatures above 90 K, we find that remarkably, only one peanut-shaped electron pocket oriented along the longer a axis contributes to the ARPES measurement at low temperatures in the nematic phase, with the expected pocket along b being not observed. Thus the low temperature Fermi surface of FeSe as experimentally determined by ARPES consists of one elliptical hole pocket and one orthogonally-oriented peanut-shaped electron pocket. Our measurements clarify the long-standing controversies over the interpretation of ARPES measurements of FeSe.

Room temperature ferromagnetism in Fe-doped semiconductor ZrS2 single crystals

NASA Astrophysics Data System (ADS)

Muhammad, Zahir; Lv, Haifeng; Wu, Chuanqiang; Habib, Muhammad; Rehman, Zia ur; Khan, Rashid; Chen, Shuangming; Wu, Xiaojun; Song, Li

2018-04-01

Two dimensional (2D) layered magnetic materials have obtained much attention due to their intriguing properties with a potential application in the field of spintronics. Herein, room-temperature ferromagnetism with 0.2 emu g‑1 magnetic moment is realized in Fe-doped ZrS2 single crystals of millimeter size, in comparison with diamagnetic behaviour in ZrS2. The electron paramagnetic resonance spectroscopy reveals that 5.2wt% Fe-doping ZrS2 crystal exhibit high spin value of g-factor about 3.57 at room temperature also confirmed this evidence, due to the unpaired electrons created by doped Fe atoms. First principle static electronic and magnetic calculations further confirm the increased stability of long range ferromagnetic ordering and enhanced magnetic moment in Fe-doped ZrS2, originating from the Fe spin polarized electron near the Fermi level.

Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices

NASA Astrophysics Data System (ADS)

Coltrin, Michael E.; Kaplar, Robert J.

2017-02-01

Mobility and critical electric field for bulk AlxGa1-xN alloys across the full composition range (0 ≤ x ≤ 1) are analyzed to address the potential application of this material system for power electronics. Calculation of the temperature-dependent electron mobility includes the potential limitations due to different scattering mechanisms, including alloy, optical polar phonon, deformation potential, and piezoelectric scattering. The commonly used unipolar figure of merit (appropriate for vertical-device architectures), which increases strongly with increasing mobility and critical electric field, is examined across the alloy composition range to estimate the potential performance in power electronics applications. Alloy scattering is the dominant limitation to mobility and thus also for the unipolar figure of merit. However, at higher alloy compositions, the limitations due to alloy scattering are overcome by increased critical electric field. These trade-offs, and their temperature dependence, are quantified in the analysis.

Electron transfer across a thermal gradient

PubMed Central

Craven, Galen T.

2016-01-01

Charge transfer is a fundamental process that underlies a multitude of phenomena in chemistry and biology. Recent advances in observing and manipulating charge and heat transport at the nanoscale, and recently developed techniques for monitoring temperature at high temporal and spatial resolution, imply the need for considering electron transfer across thermal gradients. Here, a theory is developed for the rate of electron transfer and the associated heat transport between donor–acceptor pairs located at sites of different temperatures. To this end, through application of a generalized multidimensional transition state theory, the traditional Arrhenius picture of activation energy as a single point on a free energy surface is replaced with a bithermal property that is derived from statistical weighting over all configurations where the reactant and product states are equienergetic. The flow of energy associated with the electron transfer process is also examined, leading to relations between the rate of heat exchange among the donor and acceptor sites as functions of the temperature difference and the electronic driving bias. In particular, we find that an open electron transfer channel contributes to enhanced heat transport between sites even when they are in electronic equilibrium. The presented results provide a unified theory for charge transport and the associated heat conduction between sites at different temperatures. PMID:27450086

A Harsh Environment Wireless Pressure Sensing Solution Utilizing High Temperature Electronics

PubMed Central

Yang, Jie

2013-01-01

Pressure measurement under harsh environments, especially at high temperatures, is of great interest to many industries. The applicability of current pressure sensing technologies in extreme environments is limited by the embedded electronics which cannot survive beyond 300 °C ambient temperature as of today. In this paper, a pressure signal processing and wireless transmission module based on the cutting-edge Silicon Carbide (SiC) devices is designed and developed, for a commercial piezoresistive MEMS pressure sensor from Kulite Semiconductor Products, Inc. Equipped with this advanced high-temperature SiC electronics, not only the sensor head, but the entire pressure sensor suite is capable of operating at 450 °C. The addition of wireless functionality also makes the pressure sensor more flexible in harsh environments by eliminating the costly and fragile cable connections. The proposed approach was verified through prototype fabrication and high temperature bench testing from room temperature up to 450 °C. This novel high-temperature pressure sensing technology can be applied in real-time health monitoring of many systems involving harsh environments, such as military and commercial turbine engines. PMID:23447006

Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO₂ thin films.

PubMed

Vishwas, M; Narasimha Rao, K; Chakradhar, R P S

2012-12-01

Titanium dioxide (TiO(2)) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO(2) films were investigated. The refractive index of TiO(2) films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO(2) film is of anatase phase after annealing at 300°C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. Copyright © 2012 Elsevier B.V. All rights reserved.

A harsh environment wireless pressure sensing solution utilizing high temperature electronics.

PubMed

Yang, Jie

2013-02-27

Pressure measurement under harsh environments, especially at high temperatures, is of great interest to many industries. The applicability of current pressure sensing technologies in extreme environments is limited by the embedded electronics which cannot survive beyond 300 °C ambient temperature as of today. In this paper, a pressure signal processing and wireless transmission module based on the cutting-edge Silicon Carbide (SiC) devices is designed and developed, for a commercial piezoresistive MEMS pressure sensor from Kulite Semiconductor Products, Inc. Equipped with this advanced high-temperature SiC electronics, not only the sensor head, but the entire pressure sensor suite is capable of operating at 450 °C. The addition of wireless functionality also makes the pressure sensor more flexible in harsh environments by eliminating the costly and fragile cable connections. The proposed approach was verified through prototype fabrication and high temperature bench testing from room temperature up to 450 °C. This novel high-temperature pressure sensing technology can be applied in real-time health monitoring of many systems involving harsh environments, such as military and commercial turbine engines.

Synthesis, Fabrication and Characterization of ZnO-Based Thin Films Prepared by Sol-Gel Process and H2 Gas Sensing Performance

NASA Astrophysics Data System (ADS)

Dey, Anup; Roy, Subhashis; Sarkar, Subir Kumar

2018-03-01

In this paper, an attempt is made to deposit ZnO thin films using sol-gel process followed by dip-coating method on p-silicon (100) substrates for intended application as a hydrogen gas sensor owing to the low toxic nature and thermal stability of ZnO. The thin films are annealed under annealing temperatures of 350, 450 and 550 °C for 25 min. The crystalline quality of the fabricated thin films is then analyzed by field-emission scanning electron microscopy and transmission electron microscope. The gas sensing performance analysis of ZnO thin films is demonstrated at different annealing temperatures and hydrogen gas concentrations ranging from 100 to 3000 ppm. Results obtained show that the sensitivity is significantly improved as annealing temperature increases with maximum sensitivity being achieved at 550 °C annealing temperature and operating temperature of 150 °C. Hence, the modified ZnO thin films can be applicable as H2 gas sensing device showing to the improved performance in comparison with unmodified thin-film sensor.

Collaborative designing and job satisfaction of airplane manufacturing engineers: A case study

NASA Astrophysics Data System (ADS)

Johnson, Michael David, Sr.

The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and demand for more efficient power electronics for telecommunications has driven research into AlGaN based high electron mobility transistors (HEMTs). However, the group III-nitrides material properties make them attractive for several other applications that have not received as much attention. This work focuses on developing group III-nitride based devices for novel applications. GaN is a robust, chemically inert, piezoelectric material, making it an ideal candidate for surface acoustic wave (SAW) devices designed for high temperature and/or harsh environment sensors. In this work, SAW devices based on GaN are developed for use in high temperature gas or chemical sensor applications. To increase device sensitivity, while maintaining a simple one-step photolithography fabrication process, devices were designed to operate at high harmonic frequencies. This allows for GHz regime operation without sub-micron fabrication. One potential market for this technology is continuous emissions monitoring of combustion gas vehicles. In addition to SAW devices, high electron mobility transistors (HEMTs) were developed. The epitaxial structure was characterized and the 2-D electron gas concentrations were simulated and compared to experimental results. Device fabrication processes were developed and are outlined. Fabricated devices were electrically measured and device performance is discussed.

Enhancement of thermionic emission by light

NASA Astrophysics Data System (ADS)

Sodha, Mahendra Singh; Srivastava, Sweta; Mishra, Rashmi

2017-03-01

In this paper the rate of electron emission from an illuminated hot metallic plate has been evaluated on the basis of the free electron theory of metals and Fowler's theory of photoelectric electron emission. The modification of the electron energy distribution (or enhancement of electron temperature) in the plate by energetic electrons (which get their normal energy enhanced on the surface by incident photons of frequency below threshold and are not emitted) has been taken into account. The thermionic current as modified by the electron temperature so enhanced by irradiation has been evaluated. The results may be applicable to thermionic convertors, as proposed to be operated by Schwede et al. [J.W. Schwede, I. Bargatin, D.C. Riley, B.E. Hardin, S.J. Rosenthal, Y. Sun, F. Schmitt, P. Pianette, R.T. Howe, Z. Shen, N.A. Melosh, Nat. Mater. 9, 762 (2010)]. Numerical results have been presented and discussed.

Low-temperature solution-processed hydrogen molybdenum and vanadium bronzes for an efficient hole-transport layer in organic electronics.

PubMed

Xie, Fengxian; Choy, Wallace C H; Wang, Chuandao; Li, Xinchen; Zhang, Shaoqing; Hou, Jianhui

2013-04-11

A simple one-step method is reported to synthesize low-temperature solution-processed transition metal oxides (TMOs) of molybdenum oxide and vanadium oxide with oxygen vacancies for a good hole-transport layer (HTL). The oxygen vacancy plays an essential role for TMOs when they are employed as HTLs: TMO films with excess oxygen are highly undesirable for their application in organic electronics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electronics for Deep Space Cryogenic Applications

NASA Technical Reports Server (NTRS)

Patterson, R. L.; Hammond, A.; Dickman, J. E.; Gerber, S. S.; Elbuluk, M. E.; Overton, E.

2002-01-01

Deep space probes and planetary exploration missions require electrical power management and control systems that are capable of efficient and reliable operation in very cold temperature environments. Typically, in deep space probes, heating elements are used to keep the spacecraft electronics near room temperature. The utilization of power electronics designed for and operated at low temperature will contribute to increasing efficiency and improving reliability of space power systems. At NASA Glenn Research Center, commercial-off-the-shelf devices as well as developed components are being investigated for potential use at low temperatures. These devices include semiconductor switching devices, magnetics, and capacitors. Integrated circuits such as digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being evaluated. In this paper, results will be presented for selected analog-to-digital converters, oscillators, DC/DC converters, and pulse width modulation (PWM) controllers.

Magnetic moments induce strong phonon renormalization in FeSi.

PubMed

Krannich, S; Sidis, Y; Lamago, D; Heid, R; Mignot, J-M; Löhneysen, H v; Ivanov, A; Steffens, P; Keller, T; Wang, L; Goering, E; Weber, F

2015-11-27

The interactions of electronic, spin and lattice degrees of freedom in solids result in complex phase diagrams, new emergent phenomena and technical applications. While electron-phonon coupling is well understood, and interactions between spin and electronic excitations are intensely investigated, only little is known about the dynamic interactions between spin and lattice excitations. Noncentrosymmetric FeSi is known to undergo with increasing temperature a crossover from insulating to metallic behaviour with concomitant magnetic fluctuations, and exhibits strongly temperature-dependent phonon energies. Here we show by detailed inelastic neutron-scattering measurements and ab initio calculations that the phonon renormalization in FeSi is linked to its unconventional magnetic properties. Electronic states mediating conventional electron-phonon coupling are only activated in the presence of strong magnetic fluctuations. Furthermore, phonons entailing strongly varying Fe-Fe distances are damped via dynamic coupling to the temperature-induced magnetic moments, highlighting FeSi as a material with direct spin-phonon coupling and multiple interaction paths.

Multiple Fermi pockets revealed by Shubnikov-de Haas oscillations in WTe2

NASA Astrophysics Data System (ADS)

Xiang, Fei-Xiang; Veldhorst, Menno; Dou, Shi-Xue; Wang, Xiao-Lin

2015-11-01

The recently discovered non-saturating and parabolic magnetoresistance and the pressure-induced superconductivity at low temperature in WTe2 imply its rich electronic structure and possible practical applications. Here we use magnetotransport measurements to investigate the electronic structure of WTe2 single crystals. A non-saturating and parabolic magnetoresistance is observed from low temperature to high temperature up to 200 K with magnetic fields up to 8 T. Shubnikov-de Haas (SdH) oscillations with beating patterns are observed, the fast Fourier transform of which reveals three oscillation frequencies, corresponding to three pairs of Fermi pockets with comparable effective masses, m* ∼ 0.31~me . By fitting the Hall resistivity, we infer that they can be attributed to one pair of electron pockets and two pairs of hole pockets, together with nearly perfect compensation of the electron-hole carrier concentration. These magnetotransport measurements reveal the complex electronic structure in WTe2, explaining the non-saturating magnetoresistance.

Plasma characteristics of direct current enhanced cylindrical inductively coupled plasma source

NASA Astrophysics Data System (ADS)

Yue, HUA; Jian, SONG; Zeyu, HAO; Chunsheng, REN

2018-06-01

Experimental results of a direct current enhanced inductively coupled plasma (DCE-ICP) source which consists of a typical cylindrical ICP source and a plate-to-grid DC electrode are reported. With the use of this new source, the plasma characteristic parameters, namely, electron density, electron temperature and plasma uniformity, are measured by Langmuir floating double probe. It is found that DC discharge enhances the electron density and decreases the electron temperature, dramatically. Moreover, the plasma uniformity is obviously improved with the operation of DC and radio frequency (RF) hybrid discharge. Furthermore, the nonlinear enhancement effect of electron density with DC + RF hybrid discharge is confirmed. The presented observation indicates that the DCE-ICP source provides an effective method to obtain high-density uniform plasma, which is desirable for practical industrial applications.

Electronic excitation and quenching of atoms at insulator surfaces

NASA Technical Reports Server (NTRS)

Swaminathan, P. K.; Garrett, Bruce C.; Murthy, C. S.

1988-01-01

A trajectory-based semiclassical method is used to study electronically inelastic collisions of gas atoms with insulator surfaces. The method provides for quantum-mechanical treatment of the internal electronic dynamics of a localized region involving the gas/surface collision, and a classical treatment of all the nuclear degrees of freedom (self-consistently and in terms of stochastic trajectories), and includes accurate simulation of the bath-temperature effects. The method is easy to implement and has a generality that holds promise for many practical applications. The problem of electronically inelastic dynamics is solved by computing a set of stochastic trajectories that on thermal averaging directly provide electronic transition probabilities at a given temperature. The theory is illustrated by a simple model of a two-state gas/surface interaction.

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Integrated electronics and fluidic MEMS for bioengineering

NASA Astrophysics Data System (ADS)

Fok, Ho Him Raymond

Microelectromechanical systems (MEMS) and microelectronics have become enabling technologies for many research areas. This dissertation presents the use of fluidic MEMS and microelectronics for bioengineering applications. In particular, the versatility of MEMS and microelectronics is highlighted by the presentation of two different applications, one for in-vitro study of nano-scale dynamics during cell division and one for in-vivo monitoring of biological activities at the cellular level. The first application of an integrated system discussed in this dissertation is to utilize fluidic MEMS for studying dynamics in the mitotic spindle, which could lead to better chemotherapeutic treatments for cancer patients. Previous work has developed the use of electrokinetic phenomena on the surface of a glass-based platform to assemble microtubules, the building blocks of mitotic spindles. Nevertheless, there are two important limitations of this type of platform. First, an unconventional microfabrication process is necessary for the glass-based platform, which limits the utility of this platform. In order to overcome this limitation, in this dissertation a convenient microfluidic system is fabricated using a negative photoresist called SU-8. The fabrication process for the SU-8-based system is compatible with other fabrication techniques used in developing microelectronics, and this compatibility is essential for integrating electronics for studying dynamics in the mitotic spindle. The second limitation of the previously-developed glass-based platform is its lack of bio-compatibility. For example, microtubules strongly interact with the surface of the glass-based platform, thereby hindering the study of dynamics in the mitotic spindle. This dissertation presents a novel approach for assembling microtubules away from the surface of the platform, and a fabrication process is developed to assemble microtubules between two self-aligned thin film electrodes on thick SU-8 pedestals. This approach also allows the in-vitro model to mimic the three-dimensionality of the cellular mitotic spindle that is absent in previous work. The second application of an integrated bioengineering system discussed in this dissertation is to design and fabricate active electronics and sensors for an in-vivo application to monitor neural activity at the cellular level. Temperature sensors were chosen for a first demonstration. In order for temperature sensors to be able to be implanted into brain interfaces, it is necessary for these devices to be fabricated using processes that are compatible with bio-compatible substrates such as glass and plastic. This dissertation addresses this challenge by developing temperature sensors integrated with biasing circuitry using zinc oxide thin film transistors (TFTs) fabricated on polyimide substrates. The integrated sensors show good temperature sensitivity, which is critical for monitoring neural temperature at the cellular level. This dissertation also describes the unique requirements of encapsulating implantable electronics. For instance, encapsulation schemes must be designed in such a way that they both protect electronic devices from extracellular fluids and also do not interfere with the functionality of these devices. In this work, SU-8 is used as a convenient and effective encapsulation layer. Thermal engineering to prevent active electronics from overheating and to ensure accurate temperature measurement from temperature sensors is also discussed, and a synergistic encapsulation and thermal engineering combination is presented.

Solder Creep-Fatigue Interactions with Flexible Leaded Part

NASA Technical Reports Server (NTRS)

Ross, R. G., Jr.; Wen, L. C.

1994-01-01

In most electronic packaging applications it is not a single high stress event that breaks a component solder joint; rather it is repeated or prolonged load applications that result in fatigue or creep failure of the solder. The principal strain in solder joints is caused by differential expansion between the part and its mounting environment due to hanges in temperature (thermal cycles) and/or due to temperature gradients between the part and the board.

Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications

NASA Astrophysics Data System (ADS)

Ali, H. M.; Abd El-Raheem, M. M.; Megahed, N. M.; Mohamed, H. A.

2006-08-01

Aluminum-doped zinc oxide (AZO) thin films have been deposited by electron beam evaporation technique on glass substrates. The structural, electrical and optical properties of AZO films have been investigated as a function of annealing temperature. It was observed that the optical properties such as transmittance, reflectance, optical band gap and refractive index of AZO films were strongly affected by annealing temperature. The transmittance values of 84% in the visible region and 97% in the NIR region were obtained for AZO film annealed at 475 °C. The room temperature electrical resistivity of 4.6×10-3 Ω cm has been obtained at the same temperature of annealing. It was found that the calculated refractive index has been affected by the packing density of the thin films, whereas, the high annealing temperature gave rise to improve the homogeneity of the films. The single-oscillator model was used to analyze the optical parameters such as the oscillator and dispersion energies.

Prospects for applications of electron beams in processing of gas and oil hydrocarbons

NASA Astrophysics Data System (ADS)

Ponomarev, A. V.; Pershukov, V. A.; Smirnov, V. P.

2015-12-01

Waste-free processing of oil and oil gases can be based on electron-beam technologies. Their major advantage is an opportunity of controlled manufacturing of a wide range of products with a higher utility value at moderate temperatures and pressures. The work considers certain key aspects of electron beam technologies applied for the chain cracking of heavy crude oil, for the synthesis of premium gasoline from oil gases, and also for the hydrogenation, alkylation, and isomerization of unsaturated oil products. Electronbeam processing of oil can be embodied via compact mobile modules which are applicable for direct usage at distant oil and gas fields. More cost-effective and reliable electron accelerators should be developed to realize the potential of electron-beam technologies.

MEMS Applications in Aerodynamic Measurement Technology

NASA Technical Reports Server (NTRS)

Reshotko, E.; Mehregany, M.; Bang, C.

1998-01-01

Microelectromechanical systems (MEMS) embodies the integration of sensors, actuators, and electronics on a single substrate using integrated circuit fabrication techniques and compatible bulk and surface micromachining processes. Silicon and its derivatives form the material base for the MEMS technology. MEMS devices, including microsensors and microactuators, are attractive because they can be made small (characteristic dimension about 100 microns), be produced in large numbers with uniform performance, include electronics for high performance and sophisticated functionality, and be inexpensive. For aerodynamic measurements, it is preferred that sensors be small so as to approximate measurement at a point, and in fact, MEMS pressure sensors, wall shear-stress sensors, heat flux sensors and micromachined hot wires are nearing application. For the envisioned application to wind tunnel models, MEMS sensors can be placed on the surface or in very shallow grooves. MEMS devices have often been fabricated on stiff, flat silicon substrates, about 0.5 mm thick, and therefore were not easily mounted on curved surfaces. However, flexible substrates are now available and heat-flux sensor arrays have been wrapped around a curved turbine blade. Electrical leads can also be built into the flexible substrate. Thus MEMS instrumented wind tunnel models do not require deep spanwise grooves for tubes and leads that compromise the strength of conventionally instrumented models. With MEMS, even the electrical leads can potentially be eliminated if telemetry of the signals to an appropriate receiver can be implemented. While semiconductor silicon is well known for its electronic properties, it is also an excellent mechanical material for MEMS applications. However, silicon electronics are limited to operations below about 200 C, and silicon's mechanical properties start to diminish above 400 C. In recent years, silicon carbide (SiC) has emerged as the leading material candidate for applications in high temperature environments and can be used for high-temperature MEMS applications. With SiC, diodes and more complex electronics have been shown to operate to about 600 C, while the mechanical properties of SiC are maintained to much higher temperatures. Even when MEMS devices show benefits in the laboratory, there are many packaging challenges for any aeronautics application. Incorporating MEMS into these applications requires new approaches to packaging that goes beyond traditional integrated circuit (IC) packaging technologies. MEMS must interact mechanically, as well as electrically with their environment, making most traditional chip packaging and mounting techniques inadequate. Wind tunnels operate over wide temperature ranges in an environment that is far from being a 'clean-room.' In flight, aircraft are exposed to natural elements (e.g. rain, sun, ice, insects and dirt) and operational interferences(e.g. cleaning and deicing fluids, and maintenance crews). In propulsion systems applications, MEMS devices will have to operate in environments containing gases with very high temperatures, abrasive particles and combustion products. Hence deployment and packaging that maintains the integrity of the MEMS system is crucial. This paper presents an overview of MEMS fabrication and materials, descriptions of available sensors with more details on those being developed in our laboratories, and a discussion of sensor deployment options for wind tunnel and flight applications.

Fractography handbook of spaceflight metals

NASA Technical Reports Server (NTRS)

Derro, Rebecca J.

1993-01-01

This handbook was produced with the intention of providing failure analysts who work with space flight metals a reference of scanning electron microscope (SEM) fractographs of fracture surfaces produced under known condition. The metals and the fracture conditions were chosen to simulate situations that are encountered in spaceflight applications. This includes tensile overload at both room temperature and liquid nitrogen temperature, and fatigue at room temperature.

Thales Cryogenics rotary cryocoolers for HOT applications

NASA Astrophysics Data System (ADS)

Martin, Jean-Yves; Cauquil, Jean-Marc; Benschop, Tonny; Freche, Sébastien

2012-06-01

Thales Cryogenics has an extensive background in delivering reliable linear and rotary coolers for military, civil and space programs. Recent work carried out at detector level enable to consider a higher operation temperature for the cooled detectors. This has a direct impact on the cooling power required to the cryocooler. In continuation of the work presented last year, Thales cryogenics has studied the operation and optimization of the rotary cryocoolers at high cold regulation temperature. In this paper, the performances of the Thales Cryogenics rotary cryocoolers at elevated cold regulation temperature will be presented. From these results, some trade-offs can be made to combine correct operation of the cryocooler on all the ambient operational range and maximum efficiency of the cryocooler. These trade-offs and the impact on MTTF of elevated cold regulation temperature will be presented and discussed. In correlation with the increase of the cold operation temperature, the cryocooler input power is significantly decreased. As a consequence, the cooler drive electronics own consumption becomes relatively important and must be reduced in order to minimize global input power to the cooling function (cryocooler and cooler drive electronics). Thales Cryogenics has developed a new drive electronics optimized for low input power requirements. In parallel, improvements on RM1 and RM2 cryocoolers have been defined and implemented. The main impacts on performances of these new designs will be presented. Thales cryogenics is now able to propose an efficient cooling function for application requiring a high cold regulation temperature including a range of tuned rotary coolers.

High-Temperature High-Power Packaging Techniques for HEV Traction Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barlow, F.D.; Elshabini, A.

A key issue associated with the wider adoption of hybrid-electric vehicles (HEV) and plug in hybrid-electric vehicles (PHEV) is the implementation of the power electronic systems that are required in these products [1]. To date, many consumers find the adoption of these technologies problematic based on a financial analysis of the initial cost versus the savings available from reduced fuel consumption. Therefore, one of the primary industry goals is the reduction in the price of these vehicles relative to the cost of traditional gasoline powered vehicles. Part of this cost reduction must come through optimization of the power electronics requiredmore » by these vehicles. In addition, the efficiency of the systems must be optimized in order to provide the greatest range possible. For some drivers, any reduction in the range associated with a potential HEV or PHEV solution in comparison to a gasoline powered vehicle represents a significant barrier to adoption and the efficiency of the power electronics plays an important role in this range. Likewise, high efficiencies are also important since lost power further complicates the thermal management of these systems. Reliability is also an important concern since most drivers have a high level of comfort with gasoline powered vehicles and are somewhat reluctant to switch to a less proven technology. Reliability problems in the power electronics or associated components could not only cause a high warranty cost to the manufacturer, but may also taint these technologies in the consumer's eyes. A larger vehicle offering in HEVs is another important consideration from a power electronics point of view. A larger vehicle will need more horsepower, or a larger rated drive. In some ways this will be more difficult to implement from a cost and size point of view. Both the packaging of these modules and the thermal management of these systems at competitive price points create significant challenges. One way in which significant cost reduction of these systems could be achieved is through the use of a single coolant loop for both the power electronics as well as the internal combustion engine (ICE) [2]. This change would reduce the complexity of the cooling system which currently relies on two loops to a single loop [3]. However, the current nominal coolant temperature entering these inverters is 65 C [3], whereas a normal ICE coolant temperature would be much higher at approximately 100 C. This change in coolant temperature significantly increases the junction temperatures of the devices and creates a number of challenges for both device fabrication and the assembly of these devices into inverters and converters for HEV and PHEV applications. With this change in mind, significant progress has been made on the use of SiC devices for inverters that can withstand much higher junction temperatures than traditional Si based inverters [4,5,6]. However, a key problem which the single coolant loop and high temperature devices is the effective packaging of these devices and related components into a high temperature inverter. The elevated junction temperatures that exist in these modules are not compatible with reliable inverters based on existing packaging technology. This report seeks to provide a literature survey of high temperature packaging and to highlight the issues related to the implementation of high temperature power electronic modules for HEV and PHEV applications. For purposes of discussion, it will be assumed in this report that 200 C is the targeted maximum junction temperature.« less

A determination of relativistic shock jump conditions using Monte Carlo techniques

NASA Technical Reports Server (NTRS)

Ellison, Donald C.; Reynolds, Stephen P.

1991-01-01

Monte Carlo techniques are used, assuming isotropic elastic scattering of all particles, to calculate jump conditions in parallel relativistic collisionless shocks in the absence of Fermi acceleration. The shock velocity and compression ratios are shown for arbitrary flow velocities and for any upstream temperature. Both single-component electron-positron plasma and two-component proton-electron plasmas are considered. It is shown that protons and electrons must share energy, directly or through the mediation of plasma waves, in order to satisfy the basic conservation conditions, and the electron and proton temperatures are determined for a particular microscopic, kinetic-theory model, namely, that protons always scatter elastically. The results are directly applicable to shocks in which waves of scattering superthermal particles are absent.

Room-Temperature Determination of Two-Dimensional Electron Gas Concentration and Mobility in Heterostructures

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

1993-01-01

A technique for determination of room-temperature two-dimensional electron gas (2DEG) concentration and mobility in heterostructures is presented. Using simultaneous fits of the longitudinal and transverse voltages as a function of applied magnetic field, we were able to separate the parameters associated with the 2DEG from those of the parallel layer. Comparison with the Shubnikov-de Haas data derived from measurements at liquid helium temperatures proves that the analysis of the room-temperature data provides an excellent estimate of the 2DEG concentration. In addition we were able to obtain for the first time the room-temperature mobility of the 2DEG, an important parameter to device application. Both results are significantly different from those derived from conventional Hall analysis.

Chemical sintering of direct-written silver nanowire flexible electrodes under room temperature.

PubMed

Hui, Zhuang; Liu, Yangai; Guo, Wei; Li, Lihang; Mu, Nan; Jin, Chao; Zhu, Ying; Peng, Peng

2017-07-14

Transparent and flexible electrodes on cost effective plastic substrates for wearable electronics have attract great attention recently. Due to the conductivity and flexibility in network form, metal nanowire is regarded as one of the most promising candidates for flexible electrode fabrication. Prior to application, low temperature joining of nanowire processes are required to reduce the resistance of electrodes and simultaneously maintain the dimensionality and uniformity of those nanowires. In the present work, we presented an innovative, robust and cost effective method to minimize the heat effect to plastic substrate and silver nanowires which allows silver nanowire electrodes been directly written on polycarbonate substrate and sintered by different electrolyte solutions at room temperature or near. It has been rigorously demonstrated that the resistance of silver nanowire electrodes has been reduced by 90% after chemical sintering at room temperature due to the joining of silver nanowires at junction areas. After ∼1000 bending cycles, the measured resistance of silver nanowire electrode was stable during both up-bending and down-bending states. The changes of silver nanowires after sintering were characterized using x-ray photoelectron spectroscopy and transmission electron microscopy and a sintering mechanism was proposed and validated. This direct-written silver nanowire electrode with good performance has broad applications in flexible electronics fabrication and packaging.

Air-Cooled Heat Exchanger for High-Temperature Power Electronics: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waye, S. K.; Lustbader, J.; Musselman, M.

2015-05-06

This work demonstrates a direct air-cooled heat exchanger strategy for high-temperature power electronic devices with an application specific to automotive traction drive inverters. We present experimental heat dissipation and system pressure curves versus flow rate for baseline and optimized sub-module assemblies containing two ceramic resistance heaters that provide device heat fluxes. The maximum allowable junction temperature was set to 175 deg.C. Results were extrapolated to the inverter scale and combined with balance-of-inverter components to estimate inverter power density and specific power. The results exceeded the goal of 12 kW/L and 12 kW/kg for power density and specific power, respectively.

Current-free double layers: A review

NASA Astrophysics Data System (ADS)

Singh, Nagendra

2011-12-01

During the last decade, there has been an upsurge in the research on current-free DLs (CFDLs). Research includes theory, laboratory measurements, and various applications of CFDLs ranging from plasma thrusters to acceleration of charged particles in space and astrophysical plasmas. The purpose of this review is to present a unified understanding of the basic plasma processes, which lead to the formation of CFDLs. The review starts with the discussion on early research on electric fields and double layers (DLs) and ion acceleration in planar plasma expansion. The review continues with the formation of DLs and rarefaction shocks (RFS) in expanding plasma with two electron populations with different temperatures. The basic theory mitigating the formation of a CFDL by two-electron temperature population is reviewed; we refer to such CFDLs as double layers structures formation by two-temperature electron populations (TET-CFDLs). Application of TET-CFDLS to ion acceleration in laboratory and space plasmas was discussed including the formation of stationary steady-state DLs. A quite different type of CFDLs forms in a helicon plasma device (HPD), in which plasma abruptly expands from a narrow plasma source tube into a wide diffusion tube with abruptly diverging magnetic fields. The formation mechanism of the CFDL in HPD, referred here as current free double layer structure in helicon plasma device (HPD-CFDL), and its applications are reviewed. The formation of a TET-CFDL is due to the self-consistent separation of the two electron populations parallel to the ambient magnetic field. In contrast, a HPD-CFDL forms due to self-consistent separation of electrons and ion perpendicular to the abruptly diverging magnetic field in conjunction with the conducting wall of the expansion chamber in the HPD. One-dimensional theoretical models of CFDLs based on steady-state solution of Vlasov-Poisson system of equations are briefly discussed. Applications of CFDLs ranging from helicon double-layer thrusters (HDLTs) to the accelerations of ions in space and astrophysical plasmas are summarized.

Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors.

PubMed

Quevedo-Lopez, M A; Wondmagegn, W T; Alshareef, H N; Ramirez-Bon, R; Gnade, B E

2011-06-01

The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed.

The Effects of Doping and Processing on the Thermoelectric Properties of Platinum Diantimonide Based Materials for Cryogenic Peltier Cooling Applications

NASA Astrophysics Data System (ADS)

Waldrop, Spencer Laine

The study of thermoelectrics is nearly two centuries old. In that time a large number of applications have been discovered for these materials which are capable of transforming thermal energy into electricity or using electrical work to create a thermal gradient. Current use of thermoelectric materials is in very niche applications with contemporary focus being upon their capability to recover waste heat. A relatively undeveloped region for thermoelectric application is focused upon Peltier cooling at low temperatures. Materials based on bismuth telluride semiconductors have been the gold standard for close to room temperature applications for over sixty years. For applications below room temperature, semiconductors based on bismuth antimony reign supreme with few other possible materials. The cause of this diculty in developing new, higher performing materials is due to the interplay of the thermoelectric properties of these materials. The Seebeck coecient, which characterizes the phenomenon of the conversion of heat to electricity, the electrical conductivity, and the thermal conductivity are all interconnected properties of a material which must be optimized to generate a high performance thermoelectric material. While for above room temperature applications many advancements have been made in the creation of highly ecient thermoelectric materials, the below room temperature regime has been stymied by ill-suited properties, low operating temperatures, and a lack of research. The focus of this work has been to investigate and optimize the thermoelectric properties of platinum diantimonide, PtSb2, a nearly zero gap semiconductor. The electronic properties of PtSb2 are very favorable for cryogenic Peltier applications, as it exhibits good conductivity and large Seebeck coecient below 200 K. It is shown that both n- and p-type doping may be applied to this compound to further improve its electronic properties. Through both solid solution formation and processing techniques, the thermal conductivity may be reduced in order to increase the thermoelectric gure of merit. Further reduction in thermal conductivity using other novel approaches is identied as an area of promising future research. Continued development of this material has the potential to generate a suitable replacement for some low temperature applications, but will certainly further scientic knowledge and understanding of the optimization of thermoelectric materials in this temperature regime.

Preparation and application of silver nanopaste as thermal interface materials

NASA Astrophysics Data System (ADS)

Zou, Lianfeng

The power densities in electronic devices have increased dramatically; heat dissipation has become a major challenge in high performance electronics applications. We have investigated a new type of resin-free hybrid silver nanopastes, which contain silver micro-flakes with particle sizes of 1 - 10 um and silver nanoparticles with diameters of 3 - 8 nm. The assemble temperature can be as low as 150oC due to the low sintering temperature of silver nanoparticles. The fused silver micro-and nanoparticles in TIM form continuous metallic networks, resulting in good thermal, electrical and mechanical bonding. The steady-state thermal gradient measurement show the bulk thermal conductivity between 20W/ (m*K) and 100 W/ (m*K), which is higher than commercial product in the market. The application specific performance of the nanopaste has been using LED lamp on heat sinks as model test vehicle.

Nanobonding: A key technology for emerging applications in health and environmental sciences

NASA Astrophysics Data System (ADS)

Howlader, Matiar M. R.; Deen, M. Jamal; Suga, Tadatomo

2015-03-01

In this paper, surface-activation-based nanobonding technology and its applications are described. This bonding technology allows for the integration of electronic, photonic, fluidic and mechanical components into small form-factor systems for emerging sensing and imaging applications in health and environmental sciences. Here, we describe four different nanobonding techniques that have been used for the integration of various substrates — silicon, gallium arsenide, glass, and gold. We use these substrates to create electronic (silicon), photonic (silicon and gallium arsenide), microelectromechanical (glass and silicon), and fluidic (silicon and glass) components for biosensing and bioimaging systems being developed. Our nanobonding technologies provide void-free, strong, and nanometer scale bonding at room temperature or at low temperatures (<200 °C), and do not require chemicals, adhesives, or high external pressure. The interfaces of the nanobonded materials in ultra-high vacuum and in air correspond to covalent bonds, and hydrogen or hydroxyl bonds, respectively.

Sensing Properties of a Novel Temperature Sensor Based on Field Assisted Thermal Emission.

PubMed

Pan, Zhigang; Zhang, Yong; Cheng, Zhenzhen; Tong, Jiaming; Chen, Qiyu; Zhang, Jianpeng; Zhang, Jiaxiang; Li, Xin; Li, Yunjia

2017-02-27

The existing temperature sensors using carbon nanotubes (CNTs) are limited by low sensitivity, complicated processes, or dependence on microscopy to observe the experimental results. Here we report the fabrication and successful testing of an ionization temperature sensor featuring non-self-sustaining discharge. The sharp tips of nanotubes generate high electric fields at relatively low voltages, lowering the work function of electrons emitted by CNTs, and thereby enabling the safe operation of such sensors. Due to the temperature effect on the electron emission of CNTs, the collecting current exhibited an exponential increase with temperature rising from 20 °C to 100 °C. Additionally, a higher temperature coefficient of 0.04 K -1 was obtained at 24 V voltage applied on the extracting electrode, higher than the values of other reported CNT-based temperature sensors. The triple-electrode ionization temperature sensor is easy to fabricate and converts the temperature change directly into an electrical signal. It shows a high temperature coefficient and good application potential.

Sensing Properties of a Novel Temperature Sensor Based on Field Assisted Thermal Emission

PubMed Central

Pan, Zhigang; Zhang, Yong; Cheng, Zhenzhen; Tong, Jiaming; Chen, Qiyu; Zhang, Jianpeng; Zhang, Jiaxiang; Li, Xin; Li, Yunjia

2017-01-01

The existing temperature sensors using carbon nanotubes (CNTs) are limited by low sensitivity, complicated processes, or dependence on microscopy to observe the experimental results. Here we report the fabrication and successful testing of an ionization temperature sensor featuring non-self-sustaining discharge. The sharp tips of nanotubes generate high electric fields at relatively low voltages, lowering the work function of electrons emitted by CNTs, and thereby enabling the safe operation of such sensors. Due to the temperature effect on the electron emission of CNTs, the collecting current exhibited an exponential increase with temperature rising from 20 °C to 100 °C. Additionally, a higher temperature coefficient of 0.04 K−1 was obtained at 24 V voltage applied on the extracting electrode, higher than the values of other reported CNT-based temperature sensors. The triple-electrode ionization temperature sensor is easy to fabricate and converts the temperature change directly into an electrical signal. It shows a high temperature coefficient and good application potential. PMID:28264427

Impact of Pre-Plasma on Electron Generation and Transport in Laser Plasma Interactions

NASA Astrophysics Data System (ADS)

Peebles, Jonathan Lee

Relativistic laser plasma interactions in conjunction with an underdense pre-plasma have been shown to generate a two temperature component electron spectrum. The lower temperature component described by "ponderomotive scaling'" is relatively well known and understood and is useful for applications such as the fast ignition inertial confinement fusion scheme. The higher energy electrons generated due to pre-plasma are denoted as "super-ponderomotive" electrons and facilitate interesting and useful applications. These include but are not limited to table top particle acceleration and generating high energy protons, x-rays and neutrons from secondary interactions. This dissertation describes experimental and particle-in-cell computational studies of the electron spectra produced from interactions between short pulse high intensity lasers and controlled pre-plasma conditions. Experiments were conducted at 3 laser labs: Texas Petawatt (University of Texas at Austin), Titan (Lawrence Livermore National Laboratory) and OMEGA-EP (University of Rochester). These lasers have different capabilities, and multiple experiments were carried out in order to fully understand super-ponderomotive electron generation and transport in the high intensity laser regime (I > 1018 W/cm2). In these experiments, an additional secondary long pulse beam was used to generate different scale lengths of "injected" pre-plasma while the pulse length and intensity of the short pulse beam were varied. The temperature and quantity of super-ponderomotive electrons were monitored with magnetic spectrometers and inferred via bremsstrahlung spectrometers while trajectory was estimated via Cu-Kalpha imaging. The experimental and simulation data show that super-ponderomotive electrons require pulse lengths of at least 450 fs to be accelerated and that higher intensity interactions generate large magnetic fields which cause severe deflection of the super-ponderomotive electrons. Laser incidence angle is shown to be extremely important in determining hot electron trajectory. Longer pulse length data taken on OMEGA-EP and Titan showed that super-ponderomotive electrons could be created without the need for an initial pre-plasma due to the underdense plasma created during the high intensity interaction alone.

An investigation into the role of metastable states on excited populations of weakly ionized argon plasmas, with applications for optical diagnostics

NASA Astrophysics Data System (ADS)

Arnold, Nicholas; Loch, Stuart; Ballance, Connor; Thomas, Ed

2017-10-01

Low temperature plasmas (Te < 10 eV) are ubiquitous in the medical, industrial, basic, and dusty plasma communities, and offer an opportunity for researchers to gain a better understanding of atomic processes in plasmas. Here, we report on a new atomic dataset for neutral and low charge states of argon, from which rate coefficients and cross-sections for the electron-impact excitation of neutral argon are determined. We benchmark by comparing with electron impact excitation cross-sections available in the literature, with very good agreement. We have used the Atomic Data and Analysis Structure (ADAS) code suite to calculate a level-resolved, generalized collisional-radiative (GCR) model for line emission in low temperature argon plasmas. By combining our theoretical model with experimental electron temperature, density, and spectral measurements from the Auburn Linear eXperiment for Instability Studies (ALEXIS), we have developed diagnostic techniques to measure metastable fraction, electron temperature, and electron density. In the future we hope to refine our methods, and extend our model to plasmas other than ALEXIS. Supported by the U.S. Department of Energy. Grant Number: DE-FG02-00ER54476.

The electrical transport properties of liquid Rb using pseudopotential theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, A. B., E-mail: amit07patel@gmail.com; Bhatt, N. K., E-mail: amit07patel@gmail.com; Thakore, B. Y., E-mail: amit07patel@gmail.com

2014-04-24

Certain electric transport properties of liquid Rb are reported. The electrical resistivity is calculated by using the self-consistent approximation as suggested by Ferraz and March. The pseudopotential due to Hasegawa et al for full electron-ion interaction, which is valid for all electrons and contains the repulsive delta function due to achieve the necessary s-pseudisation was used for the calculation. Temperature dependence of structure factor is considered through temperature dependent potential parameter in the pair potential. Finally, thermo-electric power and thermal conductivity are obtained. The outcome of the present study is discussed in light of other such results, and confirms themore » applicability of pseudopotential at very high temperature via temperature dependent pair potential.« less

Enhanced electron emission from coated metal targets: Effect of surface thickness on performance

NASA Astrophysics Data System (ADS)

Madas, Saibabu; Mishra, S. K.; Upadhyay Kahaly, Mousumi

2018-03-01

In this work, we establish an analytical formalism to address the temperature dependent electron emission from a metallic target with thin coating, operating at a finite temperature. Taking into account three dimensional parabolic energy dispersion for the target (base) material and suitable thickness dependent energy dispersion for the coating layer, Fermi Dirac statistics of electron energy distribution and Fowler's mechanism of the electron emission, we discuss the dependence of the emission flux on the physical properties such as the Fermi level, work function, thickness of the coating material, and operating temperature. Our systematic estimation of how the thickness of coating affects the emission current demonstrates superior emission characteristics for thin coating layer at high temperature (above 1000 K), whereas in low temperature regime, a better response is expected from thicker coating layer. This underlying fundamental behavior appears to be essentially identical for all configurations when work function of the coating layer is lower than that of the bulk target work function. The analysis and predictions could be useful in designing new coated materials with suitable thickness for applications in the field of thin film devices and field emitters.

Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe.

PubMed

Prevosto, L; Kelly, H; Mancinelli, B

2013-12-01

This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

Electron Beam-Cure Polymer Matrix Composites: Processing and Properties

NASA Technical Reports Server (NTRS)

Wrenn, G.; Frame, B.; Jensen, B.; Nettles, A.

2001-01-01

Researchers from NASA and Oak Ridge National Laboratory are evaluating a series of electron beam curable composites for application in reusable launch vehicle airframe and propulsion systems. Objectives are to develop electron beam curable composites that are useful at cryogenic to elevated temperatures (-217 C to 200 C), validate key mechanical properties of these composites, and demonstrate cost-saving fabrication methods at the subcomponent level. Electron beam curing of polymer matrix composites is an enabling capability for production of aerospace structures in a non-autoclave process. Payoffs of this technology will be fabrication of composite structures at room temperature, reduced tooling cost and cure time, and improvements in component durability. This presentation covers the results of material property evaluations for electron beam-cured composites made with either unidirectional tape or woven fabric architectures. Resin systems have been evaluated for performance in ambient, cryogenic, and elevated temperature conditions. Results for electron beam composites and similar composites cured in conventional processes are reviewed for comparison. Fabrication demonstrations were also performed for electron beam-cured composite airframe and propulsion piping subcomponents. These parts have been built to validate manufacturing methods with electron beam composite materials, to evaluate electron beam curing processing parameters, and to demonstrate lightweight, low-cost tooling options.

Investigations on the electronic transport and piezoresistivity properties of Ni{sub 2−X}Mn{sub 1+X}Ga (X = 0 and 0.15) Heusler alloys under hydrostatic pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Devarajan, U.; Kalai Selvan, G.; Sivaprakash, P.

2014-12-22

The resisitivity of Ni{sub 2−X}Mn{sub 1+X}Ga (X = 0 and 0.15) magnetic shape memory alloys has been investigated as a function of temperature (4–300 K) and hydrostatic pressure up to 30 kilobars. The resistivity is suppressed (X = 0) and enhanced (X = 0.15) with increasing pressure. A change in piezoresistivity with respect to pressure and temperature is observed. The negative and positive piezoresistivity increases with pressure for both the alloys. The residual resistivity and electron-electron scattering factor as a function of pressure reveal that for Ni{sub 2}MnGa the electron-electron scattering is predominant, while the X = 0.15 specimen is dominated by the electron-magnon scattering. The value of electron-electronmore » scattering factor is positive for both the samples, and it is decreasing (negative trend) for Ni{sub 2}MnGa and increasing (positive trend) for X = 0.15 with pressure. The martensite transition temperature is found to be increased with the application of external pressure for both samples.« less

Single-electron random-number generator (RNG) for highly secure ubiquitous computing applications

NASA Astrophysics Data System (ADS)

Uchida, Ken; Tanamoto, Tetsufumi; Fujita, Shinobu

2007-11-01

Since the security of all modern cryptographic techniques relies on unpredictable and irreproducible digital keys generated by random-number generators (RNGs), the realization of high-quality RNG is essential for secure communications. In this report, a new RNG, which utilizes single-electron phenomena, is proposed. A room-temperature operating silicon single-electron transistor (SET) having nearby an electron pocket is used as a high-quality, ultra-small RNG. In the proposed RNG, stochastic single-electron capture/emission processes to/from the electron pocket are detected with high sensitivity by the SET, and result in giant random telegraphic signals (GRTS) on the SET current. It is experimentally demonstrated that the single-electron RNG generates extremely high-quality random digital sequences at room temperature, in spite of its simple configuration. Because of its small-size and low-power properties, the single-electron RNG is promising as a key nanoelectronic device for future ubiquitous computing systems with highly secure mobile communication capabilities.

Enhanced electron mobility at the two-dimensional metallic surface of BaSnO3 electric-double-layer transistor at low temperatures

NASA Astrophysics Data System (ADS)

Fujiwara, Kohei; Nishihara, Kazuki; Shiogai, Junichi; Tsukazaki, Atsushi

2017-05-01

Wide-bandgap oxides exhibiting high electron mobility hold promise for the development of useful electronic and optoelectronic devices as well as for basic research on two-dimensional electron transport phenomena. A perovskite-type tin oxide, BaSnO3, is currently one of such targets owing to distinctly high mobility at room temperature. The challenge to overcome towards the use of BaSnO3 thin films in applications is suppression of dislocation scattering, which is one of the dominant scattering origins for electron transport. Here, we show that the mobility of the BaSnO3 electric-double-layer transistor reaches 300 cm2 V-1 s-1 at 50 K. The improved mobility indicates that charged dislocation scattering is effectively screened by electrostatically doped high-density charge carriers. We also observed metallic conduction persisting down to 2 K, which is attributed to the transition to the degenerate semiconductor. The experimental verification of bulk-level mobility at the densely accumulated surface sheds more light on the importance of suppression of dislocation scattering by interface engineering in doped BaSnO3 thin films for transparent electrode applications.

Ion plating studies for high temperature applications

NASA Technical Reports Server (NTRS)

Davis, J. H.

1980-01-01

An experimental project was undertaken to ion plate, by electron beam evaporation, Al films onto 4340 steel substrates using (and at the time troubleshooting) the custom built V.T.A. 7375 electron beam ion plating system. A careful recent literature and commercial vendor survey indicates possible means of improving the trouble plagued V.T.A. system.

Quartz Crystal Microbalance Electronic Interfacing Systems: A Review.

PubMed

Alassi, Abdulrahman; Benammar, Mohieddine; Brett, Dan

2017-12-05

Quartz Crystal Microbalance (QCM) sensors are actively being implemented in various fields due to their compatibility with different operating conditions in gaseous/liquid mediums for a wide range of measurements. This trend has been matched by the parallel advancement in tailored electronic interfacing systems for QCM sensors. That is, selecting the appropriate electronic circuit is vital for accurate sensor measurements. Many techniques were developed over time to cover the expanding measurement requirements (e.g., accommodating highly-damping environments). This paper presents a comprehensive review of the various existing QCM electronic interfacing systems. Namely, impedance-based analysis, oscillators (conventional and lock-in based techniques), exponential decay methods and the emerging phase-mass based characterization. The aforementioned methods are discussed in detail and qualitatively compared in terms of their performance for various applications. In addition, some theoretical improvements and recommendations are introduced for adequate systems implementation. Finally, specific design considerations of high-temperature microbalance systems (e.g., GaPO₄ crystals (GCM) and Langasite crystals (LCM)) are introduced, while assessing their overall system performance, stability and quality compared to conventional low-temperature applications.

Quartz Crystal Microbalance Electronic Interfacing Systems: A Review

PubMed Central

Benammar, Mohieddine; Brett, Dan

2017-01-01

Quartz Crystal Microbalance (QCM) sensors are actively being implemented in various fields due to their compatibility with different operating conditions in gaseous/liquid mediums for a wide range of measurements. This trend has been matched by the parallel advancement in tailored electronic interfacing systems for QCM sensors. That is, selecting the appropriate electronic circuit is vital for accurate sensor measurements. Many techniques were developed over time to cover the expanding measurement requirements (e.g., accommodating highly-damping environments). This paper presents a comprehensive review of the various existing QCM electronic interfacing systems. Namely, impedance-based analysis, oscillators (conventional and lock-in based techniques), exponential decay methods and the emerging phase-mass based characterization. The aforementioned methods are discussed in detail and qualitatively compared in terms of their performance for various applications. In addition, some theoretical improvements and recommendations are introduced for adequate systems implementation. Finally, specific design considerations of high-temperature microbalance systems (e.g., GaPO4 crystals (GCM) and Langasite crystals (LCM)) are introduced, while assessing their overall system performance, stability and quality compared to conventional low-temperature applications. PMID:29206212

New World Vistas: Air and Space Power for the 21st Century, Materials Volume.

DTIC Science & Technology

1996-06-01

derivatives from niche (non-silicon) materials: IR sensors, radars, lasers, and high - temperature , adverse-environment electronics. Investment in these...Develop metastable interstitial composites to create extremely high temperatures for destroying chemical biological warfare agents. " Explosives: 1...synthesize of high temperature materials that will be tailored for specific applications/ components. These materials will tend to have microstructures on

Metal-Coated Optical Fibers for High Temperature Applications

NASA Technical Reports Server (NTRS)

Zeakes, Jason; Murphy, Kent; Claus, Richard; Greene, Jonathan; Tran, Tuan

1996-01-01

A DC magnetron sputtering system has been used to actively coat optical fibers with hermetic metal coatings during the fiber draw process. Thin films of Inconel 625 have been deposited on optical fibers and annealed in air at 2000 F. Scanning electron microscopy and Auger electron microscopy have been used to investigate the morphology and composition of the films prior to and following thermal cycling. Issues to be addressed include film adhesion, other coating materials, and a discussion of additional applications for this novel technology.

Low-Dielectric Polyimides

NASA Technical Reports Server (NTRS)

St. Clair, Anne K.; St. Clair, Terry L.; Winfree, William P.; Emerson, Bert R., Jr.

1989-01-01

New process developed to produce aromatic condensation polyimide films and coatings having dielectric constants in range of 2.4 to 3.2. Materials better electrical insulators than state-of-the-art commercial polyimides. Several low-dielectric-constant polyimides have excellent resistance to moisture. Useful as film and coating materials for both industrial and aerospace applications where high electrical insulation, resistance to moisture, mechanical strength, and thermal stability required. Applicable to production of high-temperature and moisture-resistance adhesives, films, photoresists, and coatings. Electronic applications include printed-circuit boards, both of composite and flexible-film types and potential use in automotive, aerospace, and electronic industries.

Increasing the lego of 2D electronics materials: silicene and germanene, graphene's new synthetic cousins

NASA Astrophysics Data System (ADS)

Le Lay, Guy; Salomon, Eric; Angot, Thierry; Eugenia Dávila, Maria

2015-05-01

The realization of the first Field Effect Transistors operating at room temperature, based on a single layer silicene channel, open up highly promising perspectives, e.g., typically, for applications in digital electronics. Here, we describe recent results on the growth, characterization and electronic properties of novel synthetic two-dimensional materials beyond graphene, namely silicene and germanene, its silicon and germanium counterparts.

Influence of Synthesis Temperature on the Growth and Surface Morphology of Co₃O₄ Nanocubes for Supercapacitor Applications.

PubMed

Samal, Rashmirekha; Dash, Barsha; Sarangi, Chinmaya Kumar; Sanjay, Kali; Subbaiah, Tondepu; Senanayake, Gamini; Minakshi, Manickam

2017-10-31

A facile hydrothermal route to control the crystal growth on the synthesis of Co₃O₄ nanostructures with cube-like morphologies has been reported and tested its suitability for supercapacitor applications. The chemical composition and morphologies of the as-prepared Co₃O₄ nanoparticles were extensively characterized using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Varying the temperature caused considerable changes in the morphology, the electrochemical performance increased with rising temperature, and the redox reactions become more reversible. The results showed that the Co₃O₄ synthesized at a higher temperature (180 °C) demonstrated a high specific capacitance of 833 F/g. This is attributed to the optimal temperature and the controlled growth of nanocubes.

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Application of two-colour pyrometry for measuring the surface temperature of a body activated by laser pulses

NASA Astrophysics Data System (ADS)

Kirillov, V. M.; Skvortsov, L. A.

2006-08-01

The features of contactless measurements of the surface temperature of bodies by the method of two-colour pyrometry of samples activated by periodic laser pulses are considered. The requirements imposed on the parameters of laser radiation and a measuring circuit are formulated. It is shown experimentally that surface temperatures close to room temperature can be measured with an error not exceeding 3% after elimination of the superfluous static component of the excess temperature. The sensitivity of the method is estimated. Advantages of laser photothermal radiometry with repetitively pulsed excitation of surfaces over the case when samples are subjected to harmonic amplitude-modulated laser radiation are discussed.

An ultrabright and monochromatic electron point source made of a LaB6 nanowire

NASA Astrophysics Data System (ADS)

Zhang, Han; Tang, Jie; Yuan, Jinshi; Yamauchi, Yasushi; Suzuki, Taku T.; Shinya, Norio; Nakajima, Kiyomi; Qin, Lu-Chang

2016-03-01

Electron sources in the form of one-dimensional nanotubes and nanowires are an essential tool for investigations in a variety of fields, such as X-ray computed tomography, flexible displays, chemical sensors and electron optics applications. However, field emission instability and the need to work under high-vacuum or high-temperature conditions have imposed stringent requirements that are currently limiting the range of application of electron sources. Here we report the fabrication of a LaB6 nanowire with only a few La atoms bonded on the tip that emits collimated electrons from a single point with high monochromaticity. The nanostructured tip has a low work function of 2.07 eV (lower than that of Cs) while remaining chemically inert, two properties usually regarded as mutually exclusive. Installed in a scanning electron microscope (SEM) field emission gun, our tip shows a current density gain that is about 1,000 times greater than that achievable with W(310) tips, and no emission decay for tens of hours of operation. Using this new SEM, we acquired very low-noise, high-resolution images together with rapid chemical compositional mapping using a tip operated at room temperature and at 10-times higher residual gas pressure than that required for W tips.

Electron-phonon heat exchange in quasi-two-dimensional nanolayers

NASA Astrophysics Data System (ADS)

Anghel, Dragos-Victor; Cojocaru, Sergiu

2017-12-01

We study the heat power P transferred between electrons and phonons in thin metallic films deposited on free-standing dielectric membranes. The temperature range is typically below 1 K, such that the wavelengths of the excited phonon modes in the system is large enough so that the picture of a quasi-two-dimensional phonon gas is applicable. Moreover, due to the quantization of the components of the electron wavevectors perpendicular to the metal film's surface, the electrons spectrum forms also quasi two-dimensional sub-bands, as in a quantum well (QW). We describe in detail the contribution to the electron-phonon energy exchange of different electron scattering channels, as well as of different types of phonon modes. We find that heat flux oscillates strongly with thickness of the film d while having a much smoother variation with temperature (Te for the electrons temperature and Tph for the phonons temperature), so that one obtains a ridge-like landscape in the two coordinates, (d, Te) or (d, Tph), with crests and valleys aligned roughly parallel to the temperature axis. For the valley regions we find P ∝ Te3.5 - Tph3.5. From valley to crest, P increases by more than one order of magnitude and on the crests P cannot be represented by a simple power law. The strong dependence of P on d is indicative of the formation of the QW state and can be useful in controlling the heat transfer between electrons and crystal lattice in nano-electronic devices. Nevertheless, due to the small value of the Fermi wavelength in metals, the surface imperfections of the metallic films can reduce the magnitude of the oscillations of P vs. d, so this effect might be easier to observe experimentally in doped semiconductors.

Joining and Integration of Silicon Carbide-Based Materials for High Temperature Applications

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay

2016-01-01

Advanced joining and integration technologies of silicon carbide-based ceramics and ceramic matrix composites are enabling for their implementation into wide scale aerospace and ground-based applications. The robust joining and integration technologies allow for large and complex shapes to be fabricated and integrated with the larger system. Potential aerospace applications include lean-direct fuel injectors, thermal actuators, turbine vanes, blades, shrouds, combustor liners and other hot section components. Ground based applications include components for energy and environmental systems. Performance requirements and processing challenges are identified for the successful implementation different joining technologies. An overview will be provided of several joining approaches which have been developed for high temperature applications. In addition, various characterization approaches were pursued to provide an understanding of the processing-microstructure-property relationships. Microstructural analysis of the joint interfaces was conducted using optical, scanning electron, and transmission electron microscopy to identify phases and evaluate the bond quality. Mechanical testing results will be presented along with the need for new standardized test methods. The critical need for tailoring interlayer compositions for optimum joint properties will also be highlighted.

Particle-in-cell and global simulations of α to γ transition in atmospheric pressure Penning-dominated capacitive discharges

NASA Astrophysics Data System (ADS)

Kawamura, E.; Lieberman, M. A.; Lichtenberg, A. J.; Chabert, P.; Lazzaroni, C.

2014-06-01

Atmospheric pressure radio-frequency (rf) capacitive micro-discharges are of interest due to emerging applications, especially in the bio-medical field. A previous global model did not consider high-power phenomena such as sheath multiplication, thus limiting its applicability to the lower power range. To overcome this, we use one-dimensional particle-in-cell (PIC) simulations of atmospheric He/0.1% N2 capacitive discharges over a wide range of currents and frequencies to guide the development of a more general global model which is also valid at higher powers. The new model includes sheath multiplication and two classes of electrons: the higher temperature ‘hot’ electrons associated with the sheaths, and the cooler ‘warm’ electrons associated with the bulk. The electric field and the electron power balance are solved analytically to determine the time-varying hot and warm temperatures and the effective rate coefficients. The particle balance equations are integrated numerically to determine the species densities. The model and PIC results are compared, showing reasonable agreement over the range of currents and frequencies studied. They indicate a transition from an α mode at low power characterized by relatively high electron temperature Te with a near uniform profile to a γ mode at high power with a Te profile strongly depressed in the bulk plasma. The transition is accompanied by an increase in density and a decrease in sheath widths. The current and frequency scalings of the model are confirmed by the PIC simulations.

Gallium Oxide Nanostructures for High Temperature Sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chintalapalle, Ramana V.

Gallium oxide (Ga 2O 3) thin films were produced by sputter deposition by varying the substrate temperature (T s) in a wide range (T s=25-800 °C). The structural characteristics and electronic properties of Ga 2O 3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga 2O 3 films. XRD and SEM analyses indicate that the Ga 2O 3 films grown at lower temperatures were amorphous while those grown at T s≥500more » oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga 2O 3 films at T s=300-800 °C. The electronic structure determination indicated that the nanocrystalline Ga 2O 3films exhibit a band gap of ~5 eV. Tungsten (W) incorporated Ga 2O 3 films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. No secondary phase formation was observed in W-incorporated Ga 2O 3 films. W-induced effects were significant on the structure and electronic properties of Ga2O3 films. The band gap of Ga 2O 3 films without W-incorporation was ~5 eV. Oxygen sensor characteristics evaluated using optical and electrical methods indicate a faster response in W-doped Ga 2O 3 films compared to intrinsic Ga 2O 3 films. The results demonstrate the applicability of both intrinsic and W-doped Ga-oxide films for oxygen sensor application at temperatures ≥700 °C.« less

Characterizing and testing a thermally isolating superconducting link for SAFIRE-like missions

NASA Technical Reports Server (NTRS)

Selim, Raouf L.; Caton, Randall

1992-01-01

The recent discovery of high temperature ceramic superconductors with transition temperatures above 90 K has opened the possibilities for new space applications. One application is the fabrication of an electrically conducting and thermally isolating electronic link to connect IR detectors to data acquisition electronics on remote sensing platforms. The Spectroscopy of the Atmosphere using Far Infra-Red Emission (SAFIRE) mission is an example of a platform which employs hybrid dewars and combines both mechanical and cryogenic liquid cooling. This new technology is limited by the heat conducted through sensor array leads that connect the electronics (at approximately 80 K) to the sensors (at approximately 4 K). This link must be made of material that has high electrical conductivity and high thermal resistance. The YBa2Cu3O(x) superconductor with a transition temperature, T(sub c), of 93 K can achieve these conflicting requirements. A link with these characteristics will improve the thermal isolation of IR detectors and will increase the lifetime of the cryogen. A reduction of the thermal load due to the link by a factor of four will increase the lifetime of a seven year mission by about one year.

High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires.

PubMed

Boland, Jessica L; Amaduzzi, Francesca; Sterzl, Sabrina; Potts, Heidi; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

2018-06-13

InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs 0.65 Sb 0.35 . We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs 0.65 Sb 0.35 nanowires to date, exceeding 16,000 cm 2 V -1 s -1 at 10 K.

Technology Developments in Radiation-Hardened Electronics for Space Environments

NASA Technical Reports Server (NTRS)

Keys, Andrew S.; Howell, Joe T.

2008-01-01

The Radiation Hardened Electronics for Space Environments (RHESE) project consists of a series of tasks designed to develop and mature a broad spectrum of radiation hardened and low temperature electronics technologies. Three approaches are being taken to address radiation hardening: improved material hardness, design techniques to improve radiation tolerance, and software methods to improve radiation tolerance. Within these approaches various technology products are being addressed including Field Programmable Gate Arrays (FPGA), Field Programmable Analog Arrays (FPAA), MEMS, Serial Processors, Reconfigurable Processors, and Parallel Processors. In addition to radiation hardening, low temperature extremes are addressed with a focus on material and design approaches. System level applications for the RHESE technology products are discussed.

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1997-01-01

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

NASA Astrophysics Data System (ADS)

Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

2017-11-01

Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

NASA Astrophysics Data System (ADS)

Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

2018-06-01

Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

Dual-mode operation of 2D material-base hot electron transistors

PubMed Central

Lan, Yann-Wen; Torres, Jr., Carlos M.; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R.; Lerner, Mitchell B.; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L.

2016-01-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (VCB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications. PMID:27581550

Dual-mode operation of 2D material-base hot electron transistors.

PubMed

Lan, Yann-Wen; Torres, Carlos M; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R; Lerner, Mitchell B; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L

2016-09-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (VCB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

Beyond CMB cosmic variance limits on reionization with the polarized Sunyaev-Zel'dovich effect

NASA Astrophysics Data System (ADS)

Meyers, Joel; Meerburg, P. Daniel; van Engelen, Alexander; Battaglia, Nicholas

2018-05-01

Upcoming cosmic microwave background (CMB) surveys will soon make the first detection of the polarized Sunyaev-Zel'dovich effect, the linear polarization generated by the scattering of CMB photons on the free electrons present in collapsed objects. Measurement of this polarization along with knowledge of the electron density of the objects allows a determination of the quadrupolar temperature anisotropy of the CMB as viewed from the space-time location of the objects. Maps of these remote temperature quadrupoles have several cosmological applications. Here we propose a new application: the reconstruction of the cosmological reionization history. We show that with quadrupole measurements out to redshift 3, constraints on the mean optical depth can be improved by an order of magnitude beyond the CMB cosmic variance limit.

Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

DOE PAGES

Wang, Shuyu; Yu, Shifeng; Lu, Ming; ...

2016-11-30

In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

Equivalent circuit-level model of quantum cascade lasers with integrated hot-electron and hot-phonon effects

NASA Astrophysics Data System (ADS)

Yousefvand, H. R.

2017-12-01

We report a study of the effects of hot-electron and hot-phonon dynamics on the output characteristics of quantum cascade lasers (QCLs) using an equivalent circuit-level model. The model is developed from the energy balance equation to adopt the electron temperature in the active region levels, the heat transfer equation to include the lattice temperature, the nonequilibrium phonon rate to account for the hot phonon dynamics and simplified two-level rate equations to incorporate the carrier and photon dynamics in the active region. This technique simplifies the description of the electron-phonon interaction in QCLs far from the equilibrium condition. Using the presented model, the steady and transient responses of the QCLs for a wide range of sink temperatures (80 to 320 K) are investigated and analysed. The model enables us to explain the operating characteristics found in QCLs. This predictive model is expected to be applicable to all QCL material systems operating in pulsed and cw regimes.

The Hydric Effect in Inorganic Nanomaterials for Nanoelectronics and Energy Applications.

PubMed

Sun, Xu; Guo, Yuqiao; Wu, Changzheng; Xie, Yi

2015-07-08

Protons, as one of the world's smallest ions, are able to trigger the charge effect without obvious lattice expansion inside inorganic materials, offering a unique and important test-bed for controlling their diverse functionalities. Arising from the high chemical reactivity of hydrogen (easily losing an electron) with various main group anions (easily accepting a proton), the hydric effect provides a convenient and environmentally benign route to bring about fascinating new physicochemical properties, as well as to create new inorganic structures based on the "old lattice" without dramatically destroying the pristine structure, covering most inorganic materials. Moreover, hydrogen atoms tend to bond with anions or to produce intrinsic defects, both of which are expected to inject extra electrons into lattice framework, promising advances in control of bandgap, spin behavior, and carrier concentration, which determine functionality for wide applications. In this review article, recently developed effective hydric strategies are highlighted, which include the conventional hydric reaction under high temperature or room temperature, proton irradiation or hydrogen plasma treatment, and gate-electrolyte-driven adsorption or doping. The diverse physicochemical properties brought by the hydric effect via modulation of the intrinsic electronic structure are also summarized, finding wide applications in nanoelectronics, energy applications, and catalysis. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Temperature estimation from molecular nitrogen UV spectra in atmospheric pressure plasmas

NASA Astrophysics Data System (ADS)

Pepper, Keenan; Kim, Yongho; Kim, Jihun

2008-11-01

Atmospheric pressure plasmas have many potential applications to fuel processing, surface treatment, and manipulation of chemical reactions. These plasmas are often non-thermal, which means different species are not in equilibrium and have different effective temperatures. This is critical for many applications because it allows high concentrations of reactive species to be produced without using a prohibitive amount of power. In the present work, numerical software was developed to estimate the vibrational and rotational temperatures (Tvib and Trot) of N2 molecules from their ultraviolet emission spectra. The electron temperature Te can also be estimated by comparing the N2 spectrum to that of the N2^+ molecular ion. This technique is applied to several plasma sources including audio frequency, RF, and microwave devices. The results are presented and their implications for practical applications are discussed.

The development of silicon carbide-based power electronics devices

NASA Astrophysics Data System (ADS)

Hopkins, Richard H.; Perkins, John F.

1995-01-01

In 1989 Westinghouse created an internally funded initiative to develop silicon carbide materials and device technology for a variety of potential commercial and military applications. Westinghouse saw silicon carbide as having the potential for dual use. For space applications, size and weight reductions could be achieved, together with increased reliability. Terrestrially, uses in harsh-temperature environments would be enabled. Theoretically, the physical and electrical properties of silicon carbide were highly promising for high-power, high-temperature, radiation-hardened electronics. However, bulk material with the requisite electronic qualities was not available, and the methods needed to produce a silicon carbide wafer—to fabricate high-quality devices—and to transition these technologies into a commercial product were considered to be a high-risk investment. It was recognized that through a collaborative effort, the CCDS could provide scientific expertise in several areas, thus reducing this risk. These included modeling of structures, electrical contacts, dielectrics, and epitaxial growth. This collaboration has been very successful, with developed technologies being transferred to Westinghouse.

Comparison of cryogenic low-pass filters.

PubMed

Thalmann, M; Pernau, H-F; Strunk, C; Scheer, E; Pietsch, T

2017-11-01

Low-temperature electronic transport measurements with high energy resolution require both effective low-pass filtering of high-frequency input noise and an optimized thermalization of the electronic system of the experiment. In recent years, elaborate filter designs have been developed for cryogenic low-level measurements, driven by the growing interest in fundamental quantum-physical phenomena at energy scales corresponding to temperatures in the few millikelvin regime. However, a single filter concept is often insufficient to thermalize the electronic system to the cryogenic bath and eliminate spurious high frequency noise. Moreover, the available concepts often provide inadequate filtering to operate at temperatures below 10 mK, which are routinely available now in dilution cryogenic systems. Herein we provide a comprehensive analysis of commonly used filter types, introduce a novel compact filter type based on ferrite compounds optimized for the frequency range above 20 GHz, and develop an improved filtering scheme providing adaptable broad-band low-pass characteristic for cryogenic low-level and quantum measurement applications at temperatures down to few millikelvin.

Comparison of cryogenic low-pass filters

NASA Astrophysics Data System (ADS)

Thalmann, M.; Pernau, H.-F.; Strunk, C.; Scheer, E.; Pietsch, T.

2017-11-01

Low-temperature electronic transport measurements with high energy resolution require both effective low-pass filtering of high-frequency input noise and an optimized thermalization of the electronic system of the experiment. In recent years, elaborate filter designs have been developed for cryogenic low-level measurements, driven by the growing interest in fundamental quantum-physical phenomena at energy scales corresponding to temperatures in the few millikelvin regime. However, a single filter concept is often insufficient to thermalize the electronic system to the cryogenic bath and eliminate spurious high frequency noise. Moreover, the available concepts often provide inadequate filtering to operate at temperatures below 10 mK, which are routinely available now in dilution cryogenic systems. Herein we provide a comprehensive analysis of commonly used filter types, introduce a novel compact filter type based on ferrite compounds optimized for the frequency range above 20 GHz, and develop an improved filtering scheme providing adaptable broad-band low-pass characteristic for cryogenic low-level and quantum measurement applications at temperatures down to few millikelvin.

Tunable dimensional crossover and magnetocrystalline anisotropy in Fe 2 P -based alloys

DOE PAGES

Zhuravlev, I. A.; Antropov, V. P.; Vishina, A.; ...

2017-10-01

Electronic structure calculations are used to examine the magnetic properties of Fe 2P-based alloys and the mechanisms through which the Curie temperature and magnetocrystalline anisotropy can be optimized for specific applications. It is found that at elevated temperatures the magnetic interaction in pure Fe 2P develops a pronounced two-dimensional character due to the suppression of the magnetization in one of the sublattices, but the interlayer coupling is very sensitive to band filling and structural distortions. This feature suggests a natural explanation of the observed sharp enhancement of the Curie temperature by alloying with multiple elements, such as Co, Ni, Si,more » and B. The magnetocrystalline anisotropy is also tunable by electron doping, reaching a maximum near the electron count of pure Fe 2P. These findings enable the optimization of the alloy content, suggesting co-alloying of Fe 2P with Co (or Ni) and Si as a strategy for maximizing the magnetocrystalline anisotropy at and above room temperature.« less

Characterization of the Vectron PX-570 Crystal Oscillator for Use in Harsh Environments

NASA Technical Reports Server (NTRS)

Li, Jacob; Patterson, Richard L.; Hammoud, Ahmad

2012-01-01

Computing hardware, data-acquisition systems, communications systems, and many electronic control systems require well-controlled timing signals for proper and accurate operation. These signals are, in most cases, provided by circuits that employ crystal oscillators due to availability, cost, ease of operation, and accuracy. In some cases, the electronic systems are expected to survive and operate under harsh conditions that include exposure to extreme temperatures. These applications exist in terrestrial systems as well as in aerospace products. Well-logging, geothermal systems, and industrial process control are examples of ground-based applications, while distributed jet engine control in aircraft, space-based observatories (such as the James Webb Space Telescope), satellites, and lunar and planetary landers are typical environments where electronics are exposed to harsh operating conditions. To ensure these devices produce reliable results, the digital heartbeat from the oscillator must deliver a stable signal that is not affected by external temperature or other conditions. One such solution is a recently introduced commercial-off-the-shelf (COTS) oscillator, the PX-570 series from Vectron International. The oscillator was designed for high-temperature applications and as proof, the crystal oscillator was subjected to a wide suite of tests to determine its ruggedness for operation in harsh environments. The tests performed by Vectron included electrical characterization under wide range of temperature, accelerated life test/aging, shock and vibration, internal moisture analysis, ESD threshold, and latch-up testing. The parametric evaluation was performed on the oscillator's frequency, output signal rise and fall times, duty cycle, and supply current over the temperature range of -125 C to +230 C. The evaluations also determined the effects of thermal cycling and the oscillator's re-start capability at extreme hot and cold temperatures. These thermal cycling and restart tests were performed at the NASA Glenn Research Center. Overall, the crystal oscillator performed well and demonstrated very good frequency stability. This paper will discuss the test procedures and present details of the performance results.

Time-dependent analysis of visible helium line-ratios for electron temperature and density diagnostic using synthetic simulations on NSTX-U

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muñoz Burgos, J. M.; Barbui, T.; Schmitz, O.

Helium line-ratios for electron temperature (T e) and density (n e) plasma diagnostic in the Scrape-Off-Layer (SOL) and Edge regions of tokamaks are widely used. Due to their intensities and proximity of wavelengths, the singlet 667.8 and 728.1 nm, and triplet 706.5 nm visible lines have been typically preferred. Time-dependency of the triplet line (706.5 nm) has been previously analyzed in detail by including transient effects on line-ratios during gas-puff diagnostic applications. In this work, several line-ratio combinations within each of the two spin systems are analyzed with the purpose of eliminating transient effects to extend the application of thismore » powerful diagnostic to high temporal resolution characterization of plasmas. The analysis is done using synthetic emission modeling and diagnostic for low electron density NSTX SOL plasma conditions by several visible lines. Quasi-static equilibrium, and time-dependent models are employed to evaluate transient effects of the atomic population levels that may affect the derived electron temperatures and densities as the helium gas-puff penetrates the plasma. Ultimately, the analysis of a wider range of spectral lines will help to extend this powerful diagnostic to experiments where the wavelength range of the measured spectra may be constrained either by limitations of the spectrometer, or by other conflicting lines from different ions.« less

Time-dependent analysis of visible helium line-ratios for electron temperature and density diagnostic using synthetic simulations on NSTX-U

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muñoz Burgos, J. M., E-mail: jmunozbu@pppl.gov; Stutman, D.; Tritz, K.

Helium line-ratios for electron temperature (T{sub e}) and density (n{sub e}) plasma diagnostic in the Scrape-Off-Layer (SOL) and edge regions of tokamaks are widely used. Due to their intensities and proximity of wavelengths, the singlet, 667.8 and 728.1 nm, and triplet, 706.5 nm, visible lines have been typically preferred. Time-dependency of the triplet line (706.5 nm) has been previously analyzed in detail by including transient effects on line-ratios during gas-puff diagnostic applications. In this work, several line-ratio combinations within each of the two spin systems are analyzed with the purpose of eliminating transient effects to extend the application of thismore » powerful diagnostic to high temporal resolution characterization of plasmas. The analysis is done using synthetic emission modeling and diagnostic for low electron density NSTX SOL plasma conditions by several visible lines. Quasi-static equilibrium and time-dependent models are employed to evaluate transient effects of the atomic population levels that may affect the derived electron temperatures and densities as the helium gas-puff penetrates the plasma. The analysis of a wider range of spectral lines will help to extend this powerful diagnostic to experiments where the wavelength range of the measured spectra may be constrained either by limitations of the spectrometer or by other conflicting lines from different ions.« less

Time-dependent analysis of visible helium line-ratios for electron temperature and density diagnostic using synthetic simulations on NSTX-U

DOE PAGES

Muñoz Burgos, J. M.; Barbui, T.; Schmitz, O.; ...

2016-07-11

Helium line-ratios for electron temperature (T e) and density (n e) plasma diagnostic in the Scrape-Off-Layer (SOL) and Edge regions of tokamaks are widely used. Due to their intensities and proximity of wavelengths, the singlet 667.8 and 728.1 nm, and triplet 706.5 nm visible lines have been typically preferred. Time-dependency of the triplet line (706.5 nm) has been previously analyzed in detail by including transient effects on line-ratios during gas-puff diagnostic applications. In this work, several line-ratio combinations within each of the two spin systems are analyzed with the purpose of eliminating transient effects to extend the application of thismore » powerful diagnostic to high temporal resolution characterization of plasmas. The analysis is done using synthetic emission modeling and diagnostic for low electron density NSTX SOL plasma conditions by several visible lines. Quasi-static equilibrium, and time-dependent models are employed to evaluate transient effects of the atomic population levels that may affect the derived electron temperatures and densities as the helium gas-puff penetrates the plasma. Ultimately, the analysis of a wider range of spectral lines will help to extend this powerful diagnostic to experiments where the wavelength range of the measured spectra may be constrained either by limitations of the spectrometer, or by other conflicting lines from different ions.« less

Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits

NASA Astrophysics Data System (ADS)

Sutton, Akil K.

Hydrocarbon exploration, global navigation satellite systems, computed tomography, and aircraft avionics are just a few examples of applications that require system operation at an ambient temperature, pressure, or radiation level outside the range covered by military specifications. The electronics employed in these applications are known as "extreme environment electronics." On account of the increased cost resulting from both process modifications and the use of exotic substrate materials, only a handful of semiconductor foundries have specialized in the production of extreme environment electronics. Protection of these electronic systems in an extreme environment may be attained by encapsulating sensitive circuits in a controlled environment, which provides isolation from the hostile ambient, often at a significant cost and performance penalty. In a significant departure from this traditional approach, system designers have begun to use commercial off-the-shelf technology platforms with built in mitigation techniques for extreme environment applications. Such an approach simultaneously leverages the state of the art in technology performance with significant savings in project cost. Silicon-germanium is one such commercial technology platform that demonstrates potential for deployment into extreme environment applications as a result of its excellent performance at cryogenic temperatures, remarkable tolerance to radiation-induced degradation, and monolithic integration with silicon-based manufacturing. In this dissertation the radiation response of silicon-germanium technology is investigated, and novel transistor-level layout-based techniques are implemented to improve the radiation tolerance of HBT digital logic.

Flexible Dielectric Nanocomposites with Ultrawide Zero-Temperature Coefficient Windows for Electrical Energy Storage and Conversion under Extreme Conditions.

PubMed

Shehzad, Khurram; Xu, Yang; Gao, Chao; Li, Hanying; Dang, Zhi-Min; Hasan, Tawfique; Luo, Jack; Duan, Xiangfeng

2017-03-01

Polymer dielectrics offer key advantages over their ceramic counterparts such as flexibility, scalability, low cost, and high breakdown voltages. However, a major drawback that limits more widespread application of polymer dielectrics is their temperature-dependent dielectric properties. Achieving dielectric constants with low/zero-temperature coefficient (L/0TC) over a broad temperature range is essential for applications in diverse technologies. Here, we report a hybrid filler strategy to produce polymer composites with an ultrawide L/0TC window of dielectric constant, as well as a significantly enhanced dielectric value, maximum energy storage density, thermal conductivity, and stability. By creating a series of percolative polymer composites, we demonstrated hybrid carbon filler based composites can exhibit a zero-temperature coefficient window of 200 °C (from -50 to 150 °C), the widest 0TC window for all polymer composite dielectrics reported to date. We further show the electric and dielectric temperature coefficient of the composites is highly stable against stretching and bending, even under AC electric field with frequency up to 1 MHz. We envision that our method will push the functional limits of polymer dielectrics for flexible electronics in extreme conditions such as in hybrid vehicles, aerospace, power electronics, and oil/gas exploration.

Development of solution-processed nanowire composites for opto-electronics

DOE PAGES

Ginley, David S.; Aggarwal, Shruti; Singh, Rajiv; ...

2016-12-20

Here, silver nanowire-based contacts represent one of the major new directions in transparent contacts for opto-electronic devices with the added advantage that they can have Indium-Tin-Oxide-like properties at substantially reduced processing temperatures and without the use of vacuum-based processing. However, nanowires alone often do not adhere well to the substrate or other film interfaces; even after a relatively high-temperature anneal and unencapsulated nanowires show environmental degradation at high temperature and humidity. Here we report on the development of ZnO/Ag-nanowire composites that have sheet resistance below 10 Ω/sq and >90% transmittance from a solution-based process with process temperatures below 200 °C.more » These films have significant applications potential in photovoltaics and displays.« less

Calculation of Half-Metal, Debye and Curie Temperatures of Co2VAl Compound: First Principles Study

NASA Astrophysics Data System (ADS)

Arash, Boochani; Heidar, Khosravi; Jabbar, Khodadadi; Shahram, Solaymani; Masoud Majidiyan, Sarmazdeh; Rohollah Taghavi, Mendi; Sayed, Mohammad Elahi

2015-05-01

By FP-LAPW calculations, the structural, elastic, Debye and Curie temperatures, electronic and magnetic properties of Co2 VAl are investigated. The results indicate that Ferromagnetic (FM) phase is more stable than Anti-Ferromagnetic (AFM) and Non-magnetic (NM) ones. In addition, C11-C12 > 0, C44 > 0, and B > 0 so Co2VAl is an elastically stable material with high Debye temperature. Also, the B/G ratio exhibits a ductility behavior. The relatively high Curie temperature provides it as a favorable material for spintronic application. It's electronic and magnetic properties are studied by GGA+U approach leading to a 100% spin polarization at Fermi level. Supported by the simulation of Nano Physics Lab center of Kermanshah Branch, Islamic Azad University

Hybrid thermionic-photovoltaic converter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datas, A.

2016-04-04

A conceptual device for the direct conversion of heat into electricity is presented. This concept hybridizes thermionic (TI) and thermophotovoltaic (TPV) energy conversion in a single thermionic-photovoltaic (TIPV) solid-state device. This device transforms into electricity both the electron and photon fluxes emitted by an incandescent surface. This letter presents an idealized analysis of this device in order to determine its theoretical potential. According to this analysis, the key advantage of this converter, with respect to either TPV or TI, is the higher power density in an extended temperature range. For low temperatures, TIPV performs like TPV due to the negligiblemore » electron flux. On the contrary, for high temperatures, TIPV performs like TI due to the great enhancement of the electron flux, which overshadows the photon flux contribution. At the intermediate temperatures, ∼1650 K in the case of this particular study, I show that the power density potential of TIPV converter is twice as great as that of TPV and TI. The greatest impact concerns applications in which the temperature varies in a relatively wide range, for which averaged power density enhancement above 500% is attainable.« less

Electronic excitations and defects in fluoroperovskite LiBaF3

NASA Astrophysics Data System (ADS)

Springis, Maris; Brikmane, Liga; Tale, Ivar; Kulis, Peteris

2003-08-01

A survey of the present situation with respect to knowledge of lattice defects, electronic excitations, such as excitons and localized excitons, as well as energy storage and transfer phenomena in LiBaF3 crystals is given. Both phenomenological models and experimental interpretations of optical absorption bands, tentatively associated with F-type (electron) centers created by X-ray or electron irradiation, is reviewed. Interpretation of three radiative processes (super-fast core-valence transitions, slow trapped exciton luminescence and luminescence of structure defects) observed in undoped LiBaF3 crystals is analyzed with respect to practical application. Attention is paid to the behavior of ultraviolet emission so far ascribed to self-trapped exciton luminescence and also observed as a result of electron recombination with localized hole at various temperatures (even at room temperature), depending on crystal purity and growth conditions. Finally, some aspects of ionic processes in thermal relaxation of defects are pointed to.

Sheath oscillation characteristics and effect on near-wall conduction in a krypton Hall thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Fengkui, E-mail: fengkuizhang@163.com; Kong, Lingyi; Li, Chenliang

2014-11-15

Despite its affordability, the krypton Hall-effect thruster in applications always had problems in regard to performance. The reason for this degradation is studied from the perspective of the near-wall conductivity of electrons. Using the particle-in-cell method, the sheath oscillation characteristics and its effect on near-wall conduction are compared in the krypton and xenon Hall-effect thrusters both with wall material composed of BNSiO{sub 2}. Comparing these two thrusters, the sheath in the krypton-plasma thruster will oscillate at low electron temperatures. The near-wall conduction current is only produced by collisions between electrons and wall, thereby causing a deficiency in the channel current.more » The sheath displays spatial oscillations only at high electron temperature; electrons are then reflected to produce the non-oscillation conduction current needed for the krypton-plasma thruster. However, it is accompanied with intensified oscillations.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Biewer, Theodore M.; Bigelow, Tim S.; Caneses Marin, Juan F.

The Prototype Material Plasma Exposure Experiment at the Oak Ridge National Laboratory utilizes a variety of power systems to generate and deliver a high heat flux plasma onto the surface of material targets. In the experiments described here, a deuterium plasma is produced via a ~100 kW, 13.56 MHz RF helicon source, to which ~20 kW of 28 GHz microwave power is applied. The electron density and temperature profiles are measured using a Thomson scattering (TS) diagnostic, and indicate that the electron density is centrally peaked. In the core of the plasma column, the electron density is higher than themore » cut-off density (~0.9 × 1019 m -3) for the launched mixture of X- and O-mode electron cyclotron heating waves to propagate. TS measurements indicate electron temperature increases from ~5 eV to ~20 eV during 28 GHz power application when the neutral deuterium pressure is reduced below 0.13 Pa (~1 mTorr.).« less

FOB-SH: Fragment orbital-based surface hopping for charge carrier transport in organic and biological molecules and materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spencer, J.; Gajdos, F.; Blumberger, J., E-mail: j.blumberger@ucl.ac.uk

2016-08-14

We introduce a fragment orbital-based fewest switches surface hopping method, FOB-SH, designed to efficiently simulate charge carrier transport in strongly fluctuating condensed phase systems such as organic semiconductors and biomolecules. The charge carrier wavefunction is expanded and the electronic Hamiltonian constructed in a set of singly occupied molecular orbitals of the molecular sites that mediate the charge transfer. Diagonal elements of the electronic Hamiltonian (site energies) are obtained from a force field, whereas the off-diagonal or electronic coupling matrix elements are obtained using our recently developed analytic overlap method. We derive a general expression for the exact forces on themore » adiabatic ground and excited electronic state surfaces from the nuclear gradients of the charge localized electronic states. Applications to electron hole transfer in a model ethylene dimer and through a chain of ten model ethylenes validate our implementation and demonstrate its computational efficiency. On the larger system, we calculate the qualitative behaviour of charge mobility with change in temperature T for different regimes of the intermolecular electronic coupling. For small couplings, FOB-SH predicts a crossover from a thermally activated regime at low temperatures to a band-like transport regime at higher temperatures. For higher electronic couplings, the thermally activated regime disappears and the mobility decreases according to a power law. This is interpreted by a gradual loss in probability for resonance between the sites as the temperature increases. The polaron hopping model solved for the same system gives a qualitatively different result and underestimates the mobility decay at higher temperatures. Taken together, the FOB-SH methodology introduced here shows promise for a realistic investigation of charge carrier transport in complex organic, aqueous, and biological systems.« less

FOB-SH: Fragment orbital-based surface hopping for charge carrier transport in organic and biological molecules and materials

NASA Astrophysics Data System (ADS)

Spencer, J.; Gajdos, F.; Blumberger, J.

2016-08-01

We introduce a fragment orbital-based fewest switches surface hopping method, FOB-SH, designed to efficiently simulate charge carrier transport in strongly fluctuating condensed phase systems such as organic semiconductors and biomolecules. The charge carrier wavefunction is expanded and the electronic Hamiltonian constructed in a set of singly occupied molecular orbitals of the molecular sites that mediate the charge transfer. Diagonal elements of the electronic Hamiltonian (site energies) are obtained from a force field, whereas the off-diagonal or electronic coupling matrix elements are obtained using our recently developed analytic overlap method. We derive a general expression for the exact forces on the adiabatic ground and excited electronic state surfaces from the nuclear gradients of the charge localized electronic states. Applications to electron hole transfer in a model ethylene dimer and through a chain of ten model ethylenes validate our implementation and demonstrate its computational efficiency. On the larger system, we calculate the qualitative behaviour of charge mobility with change in temperature T for different regimes of the intermolecular electronic coupling. For small couplings, FOB-SH predicts a crossover from a thermally activated regime at low temperatures to a band-like transport regime at higher temperatures. For higher electronic couplings, the thermally activated regime disappears and the mobility decreases according to a power law. This is interpreted by a gradual loss in probability for resonance between the sites as the temperature increases. The polaron hopping model solved for the same system gives a qualitatively different result and underestimates the mobility decay at higher temperatures. Taken together, the FOB-SH methodology introduced here shows promise for a realistic investigation of charge carrier transport in complex organic, aqueous, and biological systems.

Amorphous silicon and organic thin film transistors for electronic applications

NASA Astrophysics Data System (ADS)

Zhou, Lisong

Recently, flexible thin film electronics has attracted huge research interest, and as now, many prototypes are being developed and demonstrated by companies around the world, including displays, logic circuit, and solar cells. Flexible electronics offers many potential advantages: it can not only generate new functions like flexible displays or solar cells, also allow very low cost manufacturing through the use of cheap polymeric substrates and roll-to-roll fabrication. a-Si:H TFT fabrications are compatible with flexible polyimide substrate materials. With the interests in the space environment, for the first time, we tested the performance changes of flexible a-Si:H TFTs, on polyimide substrates, due to irradiation and mechanical stress. Significant changes were found on TFTs after irradiation with fast electrons, which, however, was essentially removed by post-irradiation thermal annealing. On the other hand, few changes were found in TFTs by mechanical stress. These preliminary results indicate that it can be readily engineered for space applications. Furthermore, for the first time, we designed and fabricated ungated n+ muC-Si and gated a-Si:H strain sensors on flexible polyimide substrates. Compared with commercial metallic foil strain sensors, ungated muC-Si sensors and gated a-Si:H sensors are two orders of magnitude smaller in area and consume two orders or magnitude less power. Integration with a-Si:H TFTs can also allow large arrays of strain sensors to be fabricated. To take advantage of lower glass-transition-temperature polymeric substrate materials, reduced processing temperature is desired. The 150°C low-temperature deposition process is achieved by using hydrogen dilution in the PECVD process. The TFT performance and bias stability property are tested similar to that of a 250°C process. These results suggest its viability for practical applications. For even lower process temperature, we have considered organic TFTs. As a practical demonstration, we integrated pentacene TFTs with OLEDs in a simple display. Pentacene TFT passivation techniques were researched, and a PVA and parylene bilayer structure was used. We designed and demonstrated 48 x 48-pixel active matrix OTFTOLED displays, and to our best knowledge, they are the largest on glass substrates and the first on flexible PET substrates. Device performance, uniformity and stability are also compared. These results demonstrate that pentacene TFTs are viable candidates for active-matrix OLED displays and other flexible electronics applications.

The strain and thermal induced tunable charging phenomenon in low power flexible memory arrays with a gold nanoparticle monolayer

NASA Astrophysics Data System (ADS)

Zhou, Ye; Han, Su-Ting; Xu, Zong-Xiang; Roy, V. A. L.

2013-02-01

The strain and temperature dependent memory effect of organic memory transistors on plastic substrates has been investigated under ambient conditions. The gold (Au) nanoparticle monolayer was prepared and embedded in an atomic layer deposited aluminum oxide (Al2O3) as the charge trapping layer. The devices exhibited low operation voltage, reliable memory characteristics and long data retention time. Experimental analysis of the programming and erasing behavior at various bending states showed the relationship between strain and charging capacity. Thermal-induced effects on these memory devices have also been analyzed. The mobility shows ~200% rise and the memory window increases from 1.48 V to 1.8 V when the temperature rises from 20 °C to 80 °C due to thermally activated transport. The retention capability of the devices decreases with the increased working temperature. Our findings provide a better understanding of flexible organic memory transistors under various operating temperatures and validate their applications in various areas such as temperature sensors, temperature memory or advanced electronic circuits. Furthermore, the low temperature processing procedures of the key elements (Au nanoparticle monolayer and Al2O3 dielectric layer) could be potentially integrated with large area flexible electronics.The strain and temperature dependent memory effect of organic memory transistors on plastic substrates has been investigated under ambient conditions. The gold (Au) nanoparticle monolayer was prepared and embedded in an atomic layer deposited aluminum oxide (Al2O3) as the charge trapping layer. The devices exhibited low operation voltage, reliable memory characteristics and long data retention time. Experimental analysis of the programming and erasing behavior at various bending states showed the relationship between strain and charging capacity. Thermal-induced effects on these memory devices have also been analyzed. The mobility shows ~200% rise and the memory window increases from 1.48 V to 1.8 V when the temperature rises from 20 °C to 80 °C due to thermally activated transport. The retention capability of the devices decreases with the increased working temperature. Our findings provide a better understanding of flexible organic memory transistors under various operating temperatures and validate their applications in various areas such as temperature sensors, temperature memory or advanced electronic circuits. Furthermore, the low temperature processing procedures of the key elements (Au nanoparticle monolayer and Al2O3 dielectric layer) could be potentially integrated with large area flexible electronics. Electronic supplementary information (ESI) available: UV-vis spectrum of Au nanoparticle aqueous solution, transfer characteristics of the transistors without inserting an Au nanoparticle monolayer, AFM image of the pentacene layer, transfer characteristics at different program voltages and memory windows with respect to the P/E voltage. See DOI: 10.1039/c2nr32579a

Transparent Large-Area MoS2 Phototransistors with Inkjet-Printed Components on Flexible Platforms.

PubMed

Kim, Tae-Young; Ha, Jewook; Cho, Kyungjune; Pak, Jinsu; Seo, Jiseok; Park, Jongjang; Kim, Jae-Keun; Chung, Seungjun; Hong, Yongtaek; Lee, Takhee

2017-10-24

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have gained considerable attention as an emerging semiconductor due to their promising atomically thin film characteristics with good field-effect mobility and a tunable band gap energy. However, their electronic applications have been generally realized with conventional inorganic electrodes and dielectrics implemented using conventional photolithography or transferring processes that are not compatible with large-area and flexible device applications. To facilitate the advantages of 2D TMDCs in practical applications, strategies for realizing flexible and transparent 2D electronics using low-temperature, large-area, and low-cost processes should be developed. Motivated by this challenge, we report fully printed transparent chemical vapor deposition (CVD)-synthesized monolayer molybdenum disulfide (MoS 2 ) phototransistor arrays on flexible polymer substrates. All the electronic components, including dielectric and electrodes, were directly deposited with mechanically tolerable organic materials by inkjet-printing technology onto transferred monolayer MoS 2 , and their annealing temperature of <180 °C allows the direct fabrication on commercial flexible substrates without additional assisted-structures. By integrating the soft organic components with ultrathin MoS 2 , the fully printed MoS 2 phototransistors exhibit excellent transparency and mechanically stable operation.

Effect of chemical pressure on the electronic phase transition in Ca 1-x Sr x Mn 7 O 12 films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huon, A.; Lee, D.; Herklotz, A.

Here, we demonstrate how chemical pressure affects the structural and electronic phase transitions of the quadruple perovskite CaMn 7O 12 by Sr doping, a compound that exhibits a charge-ordering transition above room temperature making it a candidate for oxide electronics. We also have synthesized Ca 1-xSr xMn 7O 12 (0 ≤ x ≤ 0.6) thin films by oxide molecular beam epitaxy on (LaAlO 3) 0.3(SrAl 0.5Ta 0.5O 3) 0.7 (LSAT) substrates. The substitution of Sr for Ca results in a linear expansion of the lattice, as revealed by X-ray diffraction. Temperature-dependent resistivity and X-ray diffraction measurements are used to demonstratemore » that the coupled charge-ordering and structural phase transitions can be tuned with Sr doping. An increase in Sr concentration acts to decrease the phase transition temperature (T*) from 426 K at x = 0 to 385 K at x = 0.6. Furthemore, the presence of a tunable electronic phase transition, above room temperature, points to the potential applicability of Ca 1-xSr xMn 7O 12 in sensors or oxide electronics, for example, via charge doping.« less

New Fukui, dual and hyper-dual kernels as bond reactivity descriptors.

PubMed

Franco-Pérez, Marco; Polanco-Ramírez, Carlos-A; Ayers, Paul W; Gázquez, José L; Vela, Alberto

2017-06-21

We define three new linear response indices with promising applications for bond reactivity using the mathematical framework of τ-CRT (finite temperature chemical reactivity theory). The τ-Fukui kernel is defined as the ratio between the fluctuations of the average electron density at two different points in the space and the fluctuations in the average electron number and is designed to integrate to the finite-temperature definition of the electronic Fukui function. When this kernel is condensed, it can be interpreted as a site-reactivity descriptor of the boundary region between two atoms. The τ-dual kernel corresponds to the first order response of the Fukui kernel and is designed to integrate to the finite temperature definition of the dual descriptor; it indicates the ambiphilic reactivity of a specific bond and enriches the traditional dual descriptor by allowing one to distinguish between the electron-accepting and electron-donating processes. Finally, the τ-hyper dual kernel is defined as the second-order derivative of the Fukui kernel and is proposed as a measure of the strength of ambiphilic bonding interactions. Although these quantities have never been proposed, our results for the τ-Fukui kernel and for τ-dual kernel can be derived in zero-temperature formulation of the chemical reactivity theory with, among other things, the widely-used parabolic interpolation model.

Effect of chemical pressure on the electronic phase transition in Ca 1-x Sr x Mn 7 O 12 films

DOE PAGES

Huon, A.; Lee, D.; Herklotz, A.; ...

2017-09-18

Here, we demonstrate how chemical pressure affects the structural and electronic phase transitions of the quadruple perovskite CaMn 7O 12 by Sr doping, a compound that exhibits a charge-ordering transition above room temperature making it a candidate for oxide electronics. We also have synthesized Ca 1-xSr xMn 7O 12 (0 ≤ x ≤ 0.6) thin films by oxide molecular beam epitaxy on (LaAlO 3) 0.3(SrAl 0.5Ta 0.5O 3) 0.7 (LSAT) substrates. The substitution of Sr for Ca results in a linear expansion of the lattice, as revealed by X-ray diffraction. Temperature-dependent resistivity and X-ray diffraction measurements are used to demonstratemore » that the coupled charge-ordering and structural phase transitions can be tuned with Sr doping. An increase in Sr concentration acts to decrease the phase transition temperature (T*) from 426 K at x = 0 to 385 K at x = 0.6. Furthemore, the presence of a tunable electronic phase transition, above room temperature, points to the potential applicability of Ca 1-xSr xMn 7O 12 in sensors or oxide electronics, for example, via charge doping.« less

Influence of Synthesis Temperature on the Growth and Surface Morphology of Co3O4 Nanocubes for Supercapacitor Applications

PubMed Central

Samal, Rashmirekha; Dash, Barsha; Sarangi, Chinmaya Kumar; Subbaiah, Tondepu; Senanayake, Gamini; Minakshi, Manickam

2017-01-01

A facile hydrothermal route to control the crystal growth on the synthesis of Co3O4 nanostructures with cube-like morphologies has been reported and tested its suitability for supercapacitor applications. The chemical composition and morphologies of the as-prepared Co3O4 nanoparticles were extensively characterized using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Varying the temperature caused considerable changes in the morphology, the electrochemical performance increased with rising temperature, and the redox reactions become more reversible. The results showed that the Co3O4 synthesized at a higher temperature (180 °C) demonstrated a high specific capacitance of 833 F/g. This is attributed to the optimal temperature and the controlled growth of nanocubes. PMID:29088061

Thermoelectric Control Of Temperatures Of Pressure Sensors

NASA Technical Reports Server (NTRS)

Burkett, Cecil G., Jr.; West, James W.; Hutchinson, Mark A.; Lawrence, Robert M.; Crum, James R.

1995-01-01

Prototype controlled-temperature enclosure containing thermoelectric devices developed to house electronically scanned array of pressure sensors. Enclosure needed because (1) temperatures of transducers in sensors must be maintained at specified set point to ensure proper operation and calibration and (2) sensors sometimes used to measure pressure in hostile environments (wind tunnels in original application) that are hotter or colder than set point. Thus, depending on temperature of pressure-measurement environment, thermoelectric devices in enclosure used to heat or cool transducers to keep them at set point.

Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

Comprehensive Evaluation of Power Supplies at Cryogenic Temperatures for Deep Space Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Gerber, Scott; Hammoud, Ahmad; Elbuluk, Malik E.; Lyons, Valerie (Technical Monitor)

2002-01-01

The operation of power electronic systems at cryogenic temperatures is anticipated in many future space missions such as planetary exploration and deep space probes. In addition to surviving the space hostile environments, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. DC/DC converters are widely used in space power systems in the areas of power management, conditioning, and control. As part of the on-going Low Temperature Electronics Program at NASA, several commercial-off-the-shelf (COTS) DC/DC converters, with specifications that might fit the requirements of specific future space missions have been selected for investigation at cryogenic temperatures. The converters have been characterized in terms of their performance as a function of temperature in the range of 20 C to - 180 C. These converters ranged in electrical power from 8 W to 13 W, input voltage from 9 V to 72 V and an output voltage of 3.3 V. The experimental set-up and procedures along with the results obtained on the converters' steady state and dynamic characteristics are presented and discussed.

Recent Progress of Self-Powered Sensing Systems for Wearable Electronics.

PubMed

Lou, Zheng; Li, La; Wang, Lili; Shen, Guozhen

2017-12-01

Wearable/flexible electronic sensing systems are considered to be one of the key technologies in the next generation of smart personal electronics. To realize personal portable devices with mobile electronics application, i.e., wearable electronic sensors that can work sustainably and continuously without an external power supply are highly desired. The recent progress and advantages of wearable self-powered electronic sensing systems for mobile or personal attachable health monitoring applications are presented. An overview of various types of wearable electronic sensors, including flexible tactile sensors, wearable image sensor array, biological and chemical sensor, temperature sensors, and multifunctional integrated sensing systems is provided. Self-powered sensing systems with integrated energy units are then discussed, separated as energy harvesting self-powered sensing systems, energy storage integrated sensing systems, and all-in-on integrated sensing systems. Finally, the future perspectives of self-powered sensing systems for wearable electronics are discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rowland, Clare E.; Fedin, Igor; Diroll, Benjamin T.

Elevated temperature optoelectronic performance of semiconductor nanomaterials remains an important issue for applications. Here we examine two-dimensional CdSe nanoplatelets (NPs) and CdS/CdSe/CdS shell/core/shell sandwich NPs at temperatures ranging from 300-700 K using static and transient spectroscopies as well as in-situ transmission electron microscopy. NPs exhibit reversible changes in PL intensity, spectral position, and emission linewidth with temperature elevation up to ~500 K, losing a factor of ~8 to 10 in PL intensity at 400 K relative to ambient. Temperature elevation above ~500 K yields thickness dependent, irreversible degradation in optical properties. Electron microscopy relates stability of the NP morphology upmore » to near 600 K followed by sintering and evaporation at still higher temperatures. The mechanism of reversible PL loss, based on differences in decay dynamics between time-resolved photoluminescence and transient absorption, arise primarily from hole trapping in both NPs and sandwich NPs.« less

Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications.

PubMed

Gabrielyan, Nare; Saranti, Konstantina; Manjunatha, Krishna Nama; Paul, Shashi

2013-02-15

This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid-solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150°C using gallium as the catalyst. This study investigates the structure and the size of the grown silicon nano-structure as functions of growth temperature and catalyst layer thickness. Moreover, the choice of the growth temperature determines the thickness of the catalyst layer to be used.The electrical and optical characteristics of the nano-wires were tested by incorporating them in photovoltaic solar cells, two terminal bistable memory devices and Schottky diode. With further optimisation of the growth parameters, SiNWs, grown by our method, have promising future for incorporation into high performance electronic and optical devices.

Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications

PubMed Central

2013-01-01

This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid–solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150°C using gallium as the catalyst. This study investigates the structure and the size of the grown silicon nano-structure as functions of growth temperature and catalyst layer thickness. Moreover, the choice of the growth temperature determines the thickness of the catalyst layer to be used. The electrical and optical characteristics of the nano-wires were tested by incorporating them in photovoltaic solar cells, two terminal bistable memory devices and Schottky diode. With further optimisation of the growth parameters, SiNWs, grown by our method, have promising future for incorporation into high performance electronic and optical devices. PMID:23413969

Small temperature coefficient of resistivity of graphene/graphene oxide hybrid membranes.

PubMed

Sun, Pengzhan; Zhu, Miao; Wang, Kunlin; Zhong, Minlin; Wei, Jinquan; Wu, Dehai; Zhu, Hongwei

2013-10-09

Materials with low temperature coefficient of resistivity (TCR) are of great importance in some areas, for example, highly accurate electronic measurement instruments and microelectronic integrated circuits. In this work, we demonstrated the ultrathin graphene-graphene oxide (GO) hybrid films prepared by layer-by-layer assembly with very small TCR (30-100 °C) in the air. Electrical response of the hybrid films to temperature variation was investigated along with the progressive reduction of GO sheets. The mechanism of electrical response to temperature variation of the hybrid film was discussed, which revealed that the interaction between graphene and GO and the chemical doping effect were responsible for the tunable control of its electrical response to temperature variation. The unique properties of graphene-GO hybrid film made it a promising candidate in many areas, such as high-end film electronic device and sensor applications.

Electron beams in research and technology

NASA Astrophysics Data System (ADS)

Mehnert, R.

1995-11-01

Fast electrons lose their energy by inelastic collisions with electrons of target molecules forming secondary electrons and excited molecules. Coulomb interaction of secondary electrons with valence electrons of neighboring molecules leads to the formation of radical cations, thermalized electrons, excited molecular states and radicals. The primary reactive species initiate chemical reactions in the materials irradiated. Polymer modifications using accelerated electrons such as cross-linking of cable insulation, tubes, pipes and moldings, vulcanization of elastomers, grafting of polymer surfaces, processing of foamed plastics and heat shrinkable materials have gained wide industrial acceptance. A steadily growing electron beam technology is curing of paints, lacquers, printing inks and functional coatings. Electron beam processing offers high productivity, the possibility to treat the materials at normal temperature and pressure, excellent process control and clean production conditions. On an industrial scale the most important application of fast electrons is curing of 100% reactive monomer/prepolymer systems. Mainly acrylates and epoxides are used to formulate functional coatings on substrates such as paper, foil, wood, fibre board and high pressure laminates. A survey is given about the reaction mechanism of curing, the characterization of cured coatings, and of some industrial application.

Steepest entropy ascent quantum thermodynamic model of electron and phonon transport

NASA Astrophysics Data System (ADS)

Li, Guanchen; von Spakovsky, Michael R.; Hin, Celine

2018-01-01

An advanced nonequilibrium thermodynamic model for electron and phonon transport is formulated based on the steepest-entropy-ascent quantum thermodynamics framework. This framework, based on the principle of steepest entropy ascent (or the equivalent maximum entropy production principle), inherently satisfies the laws of thermodynamics and mechanics and is applicable at all temporal and spatial scales even in the far-from-equilibrium realm. Specifically, the model is proven to recover the Boltzmann transport equations in the near-equilibrium limit and the two-temperature model of electron-phonon coupling when no dispersion is assumed. The heat and mass transport at a temperature discontinuity across a homogeneous interface where the dispersion and coupling of electron and phonon transport are both considered are then modeled. Local nonequilibrium system evolution and nonquasiequilibrium interactions are predicted and the results discussed.

Controlled formation of closed-edge nanopores in graphene

NASA Astrophysics Data System (ADS)

He, Kuang; Robertson, Alex W.; Gong, Chuncheng; Allen, Christopher S.; Xu, Qiang; Zandbergen, Henny; Grossman, Jeffrey C.; Kirkland, Angus I.; Warner, Jamie H.

2015-07-01

Dangling bonds at the edge of a nanopore in monolayer graphene make it susceptible to back-filling at low temperatures from atmospheric hydrocarbons, leading to potential instability for nanopore applications, such as DNA sequencing. We show that closed edge nanopores in bilayer graphene are robust to back-filling under atmospheric conditions for days. A controlled method for closed edge nanopore formation starting from monolayer graphene is reported using an in situ heating holder and electron beam irradiation within an aberration-corrected transmission electron microscopy. Tailoring of closed-edge nanopore sizes is demonstrated from 1.4-7.4 nm. These results should provide mechanisms for improving the stability of nanopores in graphene for a wide range of applications involving mass transport.Dangling bonds at the edge of a nanopore in monolayer graphene make it susceptible to back-filling at low temperatures from atmospheric hydrocarbons, leading to potential instability for nanopore applications, such as DNA sequencing. We show that closed edge nanopores in bilayer graphene are robust to back-filling under atmospheric conditions for days. A controlled method for closed edge nanopore formation starting from monolayer graphene is reported using an in situ heating holder and electron beam irradiation within an aberration-corrected transmission electron microscopy. Tailoring of closed-edge nanopore sizes is demonstrated from 1.4-7.4 nm. These results should provide mechanisms for improving the stability of nanopores in graphene for a wide range of applications involving mass transport. Electronic supplementary information (ESI) available: Low magnification images, image processing techniques employed, modelling and simulation of closed edge nanoribbon, comprehensive AC-TEM dataset, and supporting analysis. See DOI: 10.1039/c5nr02277k

An ultra-lightweight design for imperceptible plastic electronics.

PubMed

Kaltenbrunner, Martin; Sekitani, Tsuyoshi; Reeder, Jonathan; Yokota, Tomoyuki; Kuribara, Kazunori; Tokuhara, Takeyoshi; Drack, Michael; Schwödiauer, Reinhard; Graz, Ingrid; Bauer-Gogonea, Simona; Bauer, Siegfried; Someya, Takao

2013-07-25

Electronic devices have advanced from their heavy, bulky origins to become smart, mobile appliances. Nevertheless, they remain rigid, which precludes their intimate integration into everyday life. Flexible, textile and stretchable electronics are emerging research areas and may yield mainstream technologies. Rollable and unbreakable backplanes with amorphous silicon field-effect transistors on steel substrates only 3 μm thick have been demonstrated. On polymer substrates, bending radii of 0.1 mm have been achieved in flexible electronic devices. Concurrently, the need for compliant electronics that can not only be flexed but also conform to three-dimensional shapes has emerged. Approaches include the transfer of ultrathin polyimide layers encapsulating silicon CMOS circuits onto pre-stretched elastomers, the use of conductive elastomers integrated with organic field-effect transistors (OFETs) on polyimide islands, and fabrication of OFETs and gold interconnects on elastic substrates to realize pressure, temperature and optical sensors. Here we present a platform that makes electronics both virtually unbreakable and imperceptible. Fabricated directly on ultrathin (1 μm) polymer foils, our electronic circuits are light (3 g m(-2)) and ultraflexible and conform to their ambient, dynamic environment. Organic transistors with an ultra-dense oxide gate dielectric a few nanometres thick formed at room temperature enable sophisticated large-area electronic foils with unprecedented mechanical and environmental stability: they withstand repeated bending to radii of 5 μm and less, can be crumpled like paper, accommodate stretching up to 230% on prestrained elastomers, and can be operated at high temperatures and in aqueous environments. Because manufacturing costs of organic electronics are potentially low, imperceptible electronic foils may be as common in the future as plastic wrap is today. Applications include matrix-addressed tactile sensor foils for health care and monitoring, thin-film heaters, temperature and infrared sensors, displays, and organic solar cells.

Plasma potential and electron temperature evaluated by ball-pen and Langmuir probes in the COMPASS tokamak

NASA Astrophysics Data System (ADS)

Dimitrova, M.; Popov, Tsv K.; Adamek, J.; Kovačič, J.; Ivanova, P.; Hasan, E.; López-Bruna, D.; Seidl, J.; Vondráček, P.; Dejarnac, R.; Stöckel, J.; Imríšek, M.; Panek, R.; the COMPASS Team

2017-12-01

The radial distributions of the main plasma parameters in the scrape-off-layer of the COMPASS tokamak are measured during L-mode and H-mode regimes by using both Langmuir and ball-pen probes mounted on a horizontal reciprocating manipulator. The radial profile of the plasma potential derived previously from Langmuir probes data by using the first derivative probe technique is compared with data derived using ball-pen probes. A good agreement can be seen between the data acquired by the two techniques during the L-mode discharge and during the H-mode regime within the inter-ELM periods. In contrast with the first derivative probe technique, the ball-pen probe technique does not require a swept voltage and, therefore, the temporal resolution is only limited by the data acquisition system. In the electron temperature evaluation, in the far scrape-off layer and in the limiter shadow, where the electron energy distribution is Maxwellian, the results from both techniques match well. In the vicinity of the last closed flux surface, where the electron energy distribution function is bi-Maxwellian, the ball-pen probe technique results are in agreement with the high-temperature components of the electron distribution only. We also discuss the application of relatively large Langmuir probes placed in parallel and perpendicularly to the magnetic field lines to studying the main plasma parameters. The results obtained by the two types of the large probes agree well. They are compared with Thomson scattering data for electron temperatures and densities. The results for the electron densities are compared also with the results from ASTRA code calculation of the electron source due to the ionization of the neutrals by fast electrons and the origin of the bi-Maxwellian electron energy distribution function is briefly discussed.

Electron temperature and density measurement of tungsten inert gas arcs with Ar-He shielding gas mixture

NASA Astrophysics Data System (ADS)

Kühn-Kauffeldt, M.; Marques, J.-L.; Forster, G.; Schein, J.

2013-10-01

The diagnostics of atmospheric welding plasma is a well-established technology. In most cases the measurements are limited to processes using pure shielding gas. However in many applications shielding gas is a mixture of various components including metal vapor in gas metal arc welding (GMAW). Shielding gas mixtures are intentionally used for tungsten inert gas (TIG) welding in order to improve the welding performance. For example adding Helium to Argon shielding gas allows the weld geometry and porosity to be influenced. Yet thermal plasmas produced with gas mixtures or metal vapor still require further experimental investigation. In this work coherent Thomson scattering is used to measure electron temperature and density in these plasmas, since this technique allows independent measurements of electron and ion temperature. Here thermal plasmas generated by a TIG process with 50% Argon and 50% Helium shielding gas mixture have been investigated. Electron temperature and density measured by coherent Thomson scattering have been compared to the results of spectroscopic measurements of the plasma density using Stark broadening of the 696.5 nm Argon spectral line. Further investigations of MIG processes using Thomson scattering technique are planned.

Joint Services Electronics Program: Basic Research in Electronics (JSEP) at the University of Texas at Austin. Appendix.

DTIC Science & Technology

1986-12-31

applications in tration on the temperature response, an effect also found the processing of Si and III-V compound semiconductors in silicon by Seidel et al. (5...Dannefaer, B. Hogg, and D. Kerr, "Defect Characterization in V. Ckil mo and Cofmment Gallium Arsenide By Positron Annihilation ," in Thirteenth We...unnecessary In "A ’I.I %’ S. 4 Brower et l. A schematic of the experimental arrangement emplSyed for application of the homodyne spectroscopy technique to

Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications.

PubMed

García, Héctor; Castán, Helena; Dueñas, Salvador; Bailón, Luis; García-Hernansanz, Rodrigo; Olea, Javier; Del Prado, Álvaro; Mártil, Ignacio

2016-12-01

A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100-150 °C) might be the best choice.

Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

NASA Astrophysics Data System (ADS)

García, Héctor; Castán, Helena; Dueñas, Salvador; Bailón, Luis; García-Hernansanz, Rodrigo; Olea, Javier; del Prado, Álvaro; Mártil, Ignacio

2016-07-01

A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100-150 °C) might be the best choice.

Exchange Enhancement of the Electron-Phonon Interaction: The Case of Weakly Doped Two-Dimensional Multivalley Semiconductors

NASA Astrophysics Data System (ADS)

Pamuk, Betül; Zoccante, Paolo; Baima, Jacopo; Mauri, Francesco; Calandra, Matteo

2018-04-01

The effect of the exchange interaction on the vibrational properties and on the electron-phonon coupling were investigated in several recent works. In most of the cases, exchange tends to enhance the electron-phonon interaction, although the motivations for such behaviour are not completely understood. Here we consider the class of weakly doped two-dimensional multivalley semiconductors and we demonstrate that a more global picture emerges. In particular we show that in these systems, at low enough doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon coupling, the electron-electron interaction results in an enhancement of the superconducting critical temperature. We demonstrate the applicability of the theory by performing random phase approximation and first principles calculations in transition metal chloronitrides. We find that exchange is responsible for the enhancement of the superconducting critical temperature in LixZrNCl and that much larger Tcs could be obtained in intercalated HfNCl if the synthesis of cleaner samples could remove the Anderson insulating state competing with superconductivity.

Computation of electron transport and relaxation properties in gases based on improved multi-term approximation of Boltzmann equation

NASA Astrophysics Data System (ADS)

Cai, X. J.; Wang, X. X.; Zou, X. B.; Lu, Z. W.

2018-01-01

An understanding of electron kinetics is of importance in various applications of low temperature plasmas. We employ a series of model and real gases to investigate electron transport and relaxation properties based on improved multi-term approximation of the Boltzmann equation. First, a comparison of different methods to calculate the interaction integrals has been carried out; the effects of free parameters, such as vmax, lmax, and the arbitrary temperature Tb, on the convergence of electron transport coefficients are analyzed. Then, the modified attachment model of Ness et al. and SF6 are considered to investigate the effect of attachment on the electron transport properties. The deficiency of the pulsed Townsend technique to measure the electron transport and reaction coefficients in electronegative gases is highlighted when the reduced electric field is small. In order to investigate the effect of external magnetic field on the electron transport properties, Ar plasmas in high power impulse sputtering devices are considered. In the end, the electron relaxation properties of the Reid model under the influence of electric and magnetic fields are demonstrated.

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamichhane, Ranjan; Ericson, Milton Nance; Frank, Steven Shane

2014-01-01

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz tomore » 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.« less

High-performance single nanowire tunnel diodes.

PubMed

Wallentin, Jesper; Persson, Johan M; Wagner, Jakob B; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T

2010-03-10

We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

A comparison of superconductor and manganin technology for electronic links used in space mission applications

NASA Technical Reports Server (NTRS)

Caton, R.; Selim, R.; Buoncristiani, A. M.

1992-01-01

The electronic link connecting cryogenically cooled radiation detectors to data acquisition and signal processing electronics at higher temperatures contributes significantly to the total heat load on spacecraft cooling systems that use combined mechanical and cryogenic liquid cooling. Using high transition temperature superconductors for this link has been proposed to increase the lifetime of space missions. Herein, several YBCO (YBa2Cu3O7) superconductor-substrate combinations were examined and total heat loads were compared to manganin wire technology in current use. Using numerical solutions to the heat-flow equations, it is shown that replacing manganin technology with YBCO thick film technology can extend a 7-year mission by up to 1 year.

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications.

PubMed

Ratajczak, J; Łaszcz, A; Czerwinski, A; Katcki, J; Phillipp, F; Van Aken, P A; Reckinger, N; Dubois, E

2010-03-01

In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of 300-700 degrees C. Both layers (200 nm Ti and 25 nm Er) were deposited by electron-beam sputtering. The investigations have shown that the transformation of the 25-nm-thick erbium into erbium silicide is completed after annealing at 500 degrees C. At higher temperatures, the formation of a titanium silicide layer above erbium silicide is observed. The lowest Schottky barrier has been measured in the sample annealed at 700 degrees C.

Quasi-linear theory of electron density and temperature fluctuations with application to MHD generators and MPD arc thrusters

NASA Technical Reports Server (NTRS)

Smith, M.

1972-01-01

Fluctuations in electron density and temperature coupled through Ohm's law are studied for an ionizable medium. The nonlinear effects are considered in the limit of a third order quasi-linear treatment. Equations are derived for the amplitude of the fluctuation. Conditions under which a steady state can exist in the presence of the fluctuation are examined and effective transport properties are determined. A comparison is made to previously considered second order theory. The effect of third order terms indicates the possibility of fluctuations existing in regions predicted stable by previous analysis.

Evaluation of in vivo dose measurements for patients undergoing electron boost treatments.

PubMed

Verney, J N; Morgan, A M

2001-06-01

This study evaluated p-type silicon diodes for use in in vivo dosimetry in clinical electron beams. A calibrated p-type silicon diode detector was used to measure the dose received by the patient in the centre of the field. Readings were corrected for energy, temperature and stand-off of the electron applicator from the patient surface. The mean difference between measured and prescribed dose was 1.04% (95% CI 0.72 to 1.36 %).

For Brighter Electron Sources: A Cryogenically Cooled Photocathode and DC Photogun

NASA Astrophysics Data System (ADS)

Lee, Hyeri

Electron beams produced by photoinjectors have a wide range of applications including colliders for high energy and nuclear physics experiments, Free Electron Lasers (FEL), Energy Recovery Linacs (ERL), and Ultrafast Electron Diffraction (UED) with a variety of uses. These applications have been made possible by recent advancement in photocathode and photoinjector research. The key factor is building a compact high-brightness electron source with high voltage and electric field at the photocathode to maximize the electron emission and minimize emittance growth due to space-charge effect. Achieving high brightness from a compact source is a challenging task because it involves an often-conflicting interplay between various requirements imposed by photoemission, acceleration, and beam dynamics. This thesis presents three important results; (i) cryogenically cooled photocathode. From 300K to 90 K, the MTE reduction has been measured from 38 +/- meV to 22 +/- 1meV. (ii) transmission photocathode. MTEs generated from the photocathode operated in transmission mode is smaller by 20% in comparison with the reflection mode operation, which is accompanied by a corresponding QE decrease of about a factor of 2. (iii) a new design of a DC photoemission gun and beamline constructed at Cornell University, along with demonstration of a cryogenically cooled photocathode and transmission photocathode. This photoemission gun can operate at 200kV at both room temperature (RT) and cryogenic temperature (low T) with a corresponding electric field of 10MV/m.

Active Thermal Extraction and Temperature Sensing of Near-field Thermal Radiation

DOE PAGES

Ding, D.; Kim, T.; Minnich, A. J.

2016-09-06

Recently, we proposed an active thermal extraction (ATX) scheme that enables thermally populated surface phonon polaritons to escape into the far-field. The concept is based on a fluorescence upconversion process that also occurs in laser cooling of solids (LCS). Here, we present a generalized analysis of our scheme using the theoretical framework for LCS. We show that both LCS and ATX can be described with the same mathematical formalism by replacing the electron-phonon coupling parameter in LCS with the electron-photon coupling parameter in ATX. Using this framework, we compare the ideal efficiency and power extracted for the two schemes andmore » examine the parasitic loss mechanisms. As a result, this work advances the application of ATX to manipulate near-field thermal radiation for applications such as temperature sensing and active radiative cooling.« less

Low-Temperature Postfunctionalization of Highly Conductive Oxide Thin-Films toward Solution-Based Large-Scale Electronics.

PubMed

Ban, Seok-Gyu; Kim, Kyung-Tae; Choi, Byung Doo; Jo, Jeong-Wan; Kim, Yong-Hoon; Facchetti, Antonio; Kim, Myung-Gil; Park, Sung Kyu

2017-08-09

Although transparent conducting oxides (TCOs) have played a key role in a wide range of solid-state electronics from conventional optoelectronics to emerging electronic systems, the processing temperature and conductivity of solution-processed materials seem to be far exceeding the thermal limitations of soft materials and insufficient for high-perfomance large-area systems, respectively. Here, we report a strategy to form highly conductive and scalable solution-processed oxide materials and their successful translation into large-area electronic applications, which is enabled by photoassisted postfunctionalization at low temperature. The low-temperature fabrication of indium-tin-oxide (ITO) thin films was achieved by using photoignited combustion synthesis combined with photoassisted reduction process under hydrogen atmosphere. It was noteworthy that the photochemically activated hydrogens on ITO surface could be triggered to facilitate highly crystalline oxygen deficient structure allowing significant increase of carrier concentration and mobility through film microstructure modifications. The low-temperature postfunctionalized ITO films demonstrated conductivity of >1607 S/cm and sheet resistance of <104 Ω/□ under the process temperature of less than 300 °C, which are comparable to those of vacuum-deposited and high-temperature annealed ITO films. Based on the photoassisted postfunctionalization route, all-solution-processed transparent metal-oxide thin-film-transistors and large-area integrated circuits with the ITO bus lines were demonstrated, showing field-effect mobilities of >6.5 cm 2 V -1 s -1 with relatively good operational stability and oscillation frequency of more than 1 MHz in 7-stage ring oscillators, respectively.

Transition in Gas Turbine Engine Control System Architecture: Modular, Distributed, Embedded

DTIC Science & Technology

2009-08-01

Design + Development + Certification + Procurement + Life Cycle Cost = Net Savings for our Customers Approved for Public Release 16 Economic ...Supporting Small Quantity Electronics Need Broadly Applicable High Temperature Electronics Supply Base Approved for Public Release 17 Economic ...rc ec ures Approved for Public Release 18 Economic Drivers for New FADEC Designs FADEC Implementation Time Pacing Engine Development Issues • FADEC

Electronic control circuits: A compilation

NASA Technical Reports Server (NTRS)

1973-01-01

A compilation of technical R and D information on circuits and modular subassemblies is presented as a part of a technology utilization program. Fundamental design principles and applications are given. Electronic control circuits discussed include: anti-noise circuit; ground protection device for bioinstrumentation; temperature compensation for operational amplifiers; hybrid gatling capacitor; automatic signal range control; integrated clock-switching control; and precision voltage tolerance detector.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

An All-Silk-Derived Dual-Mode E-skin for Simultaneous Temperature-Pressure Detection.

PubMed

Wang, Chunya; Xia, Kailun; Zhang, Mingchao; Jian, Muqiang; Zhang, Yingying

2017-11-15

Flexible skin-mimicking electronics are highly desired for development of smart human-machine interfaces and wearable human-health monitors. Human skins are able to simultaneously detect different information, such as touch, friction, temperature, and humidity. However, due to the mutual interferences of sensors with different functions, it is still a big challenge to fabricate multifunctional electronic skins (E-skins). Herein, a combo temperature-pressure E-skin is reported through assembling a temperature sensor and a strain sensor in both of which flexible and transparent silk-nanofiber-derived carbon fiber membranes (SilkCFM) are used as the active material. The temperature sensor presents high temperature sensitivity of 0.81% per centigrade. The strain sensor shows an extremely high sensitivity with a gauge factor of ∼8350 at 50% strain, enabling the detection of subtle pressure stimuli that induce local strain. Importantly, the structure of the SilkCFM in each sensor is designed to be passive to other stimuli, enabling the integrated E-skin to precisely detect temperature and pressure at the same time. It is demonstrated that the E-skin can detect and distinguish exhaling, finger pressing, and spatial distribution of temperature and pressure, which cannot be realized using single mode sensors. The remarkable performance of the silk-based combo temperature-pressure sensor, together with its green and large-scalable fabrication process, promising its applications in human-machine interfaces and soft electronics.

Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications

PubMed Central

Socratous, Josephine; Banger, Kulbinder K; Vaynzof, Yana; Sadhanala, Aditya; Brown, Adam D; Sepe, Alessandro; Steiner, Ullrich; Sirringhaus, Henning

2015-01-01

The electronic structure of low temperature, solution-processed indium–zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm2 V−1 s−1 is achievable after annealing in air above typically 250 °C but performance decreases rapidly when annealing temperatures ≤200 °C are used. Here, the electronic structure of low temperature, solution-processed oxide thin films as a function of annealing temperature and environment using a combination of X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and photothermal deflection spectroscopy is investigated. The drop-off in performance at temperatures ≤200 °C to incomplete conversion of metal hydroxide species into the fully coordinated oxide is attributed. The effect of an additional vacuum annealing step, which is beneficial if performed for short times at low temperatures, but leads to catastrophic device failure if performed at too high temperatures or for too long is also investigated. Evidence is found that during vacuum annealing, the workfunction increases and a large concentration of sub-bandgap defect states (re)appears. These results demonstrate that good devices can only be achieved in low temperature, solution-processed oxides if a significant concentration of acceptor states below the conduction band minimum is compensated or passivated by shallow hydrogen and oxygen vacancy-induced donor levels. PMID:26190964

Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications.

PubMed

Socratous, Josephine; Banger, Kulbinder K; Vaynzof, Yana; Sadhanala, Aditya; Brown, Adam D; Sepe, Alessandro; Steiner, Ullrich; Sirringhaus, Henning

2015-03-25

The electronic structure of low temperature, solution-processed indium-zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm 2 V -1 s -1 is achievable after annealing in air above typically 250 °C but performance decreases rapidly when annealing temperatures ≤200 °C are used. Here, the electronic structure of low temperature, solution-processed oxide thin films as a function of annealing temperature and environment using a combination of X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and photothermal deflection spectroscopy is investigated. The drop-off in performance at temperatures ≤200 °C to incomplete conversion of metal hydroxide species into the fully coordinated oxide is attributed. The effect of an additional vacuum annealing step, which is beneficial if performed for short times at low temperatures, but leads to catastrophic device failure if performed at too high temperatures or for too long is also investigated. Evidence is found that during vacuum annealing, the workfunction increases and a large concentration of sub-bandgap defect states (re)appears. These results demonstrate that good devices can only be achieved in low temperature, solution-processed oxides if a significant concentration of acceptor states below the conduction band minimum is compensated or passivated by shallow hydrogen and oxygen vacancy-induced donor levels.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garten, Lauren M.; Zakutayev, Andriy; Perkins, John D.

Beta-gallium oxide (β-Ga 2O 3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga 2O 3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga 2O 3 films on (0001) sapphire and (–201) Ga 2O 3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependencemore » to the phase formation, morphology, and electronic properties of β-Ga 2O 3 from 350 to 550 °C.« less

Atom probe study of grain boundary segregation in technically pure molybdenum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babinsky, K., E-mail: katharina.babinsky@stud.unileoben.ac.at; Weidow, J., E-mail: jonathan.weidow@chalmers.se; Knabl, W., E-mail: wolfram.knabl@plansee.com

2014-01-15

Molybdenum, a metal with excellent physical, chemical and high-temperature properties, is an interesting material for applications in lighting-technology, high performance electronics, high temperature furnace construction and coating technology. However, its applicability as a structural material is limited because of the poor oxidation resistance at high temperatures and a brittle-to-ductile transition around room temperature, which is influenced by the grain size and the content of interstitial impurities at the grain boundaries. Due to the progress of the powder metallurgical production during the last decades, the amount of impurities in the current quality of molybdenum has become so small that surface sensitivemore » techniques are not applicable anymore. Therefore, the atom probe, which allows the detection of small amounts of impurities as well as their location, seems to be a more suitable technique. However, a site-specific specimen preparation procedure for grain boundaries in refractory metals with a dual focused ion beam/scanning electron microscope is still required. The present investigation describes the development and successful application of such a site-specific preparation technique for grain boundaries in molybdenum, which is significantly improved by a combination with transmission electron microscopy. This complimentary technique helps to improve the visibility of grain boundaries during the last preparation steps and to evidence the presence of grain and subgrain boundaries without segregants in atom probe specimens. Furthermore, in industrially processed and recrystallized molybdenum sheets grain boundary segregation of oxygen, nitrogen and potassium is successfully detected close to segregated regions which are believed to be former sinter pores. - Highlights: • First study of grain boundary segregation in molybdenum by atom probe • Site-specific preparation technique by FIB and TEM successfully developed • Grain boundary segregation of oxygen, nitrogen and potassium found • Segregation in former sinter-pores detected • Presence of grain boundaries without segregation evidenced.« less

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

NASA Technical Reports Server (NTRS)

1996-01-01

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

High-Temperature Capacitor Polymer Films

NASA Astrophysics Data System (ADS)

Tan, Daniel; Zhang, Lili; Chen, Qin; Irwin, Patricia

2014-12-01

Film capacitor technology has been under development for over half a century to meet various applications such as direct-current link capacitors for transportation, converters/inverters for power electronics, controls for deep well drilling of oil and gas, direct energy weapons for military use, and high-frequency coupling circuitry. The biaxially oriented polypropylene film capacitor remains the state-of-the-art technology; however, it is not able to meet increasing demand for high-temperature (>125°C) applications. A number of dielectric materials capable of operating at high temperatures (>140°C) have attracted investigation, and their modifications are being pursued to achieve higher volumetric efficiency as well. This paper highlights the status of polymer dielectric film development and its feasibility for capacitor applications. High-temperature polymers such as polyetherimide (PEI), polyimide, and polyetheretherketone were the focus of our studies. PEI film was found to be the preferred choice for high-temperature film capacitor development due to its thermal stability, dielectric properties, and scalability.

GRCop-84: A High Temperature Copper-based Alloy For High Heat Flux Applications

NASA Technical Reports Server (NTRS)

Ellis, David L.

2005-01-01

While designed for rocket engine main combustion chamber liners, GRCop-84 (Cu-8 at.% Cr-4 at.% Nb) offers potential for high heat flux applications in industrial applications requiring a temperature capability up to approximately 700 C (1292 F). GRCop-84 is a copper-based alloy with excellent elevated temperature strength, good creep resistance, long LCF lives and enhanced oxidation resistance. It also has a lower thermal expansion than copper and many other low alloy copper-based alloys. GRCop-84 can be manufactured into a variety of shapes such as tubing, bar, plate and sheet using standard production techniques and requires no special production techniques. GRCop-84 forms well, so conventional fabrication methods including stamping and bending can be used. GRCop-84 has demonstrated an ability to be friction stir welded, brazed, inertia welded, diffusion bonded and electron beam welded for joining to itself and other materials. Potential applications include plastic injection molds, resistance welding electrodes and holders, permanent metal casting molds, vacuum plasma spray nozzles and high temperature heat exchanger applications.

Copper plasmonics and catalysis: role of electron-phonon interactions in dephasing localized surface plasmons

NASA Astrophysics Data System (ADS)

Sun, Qi-C.; Ding, Yuchen; Goodman, Samuel M.; H. Funke, Hans; Nagpal, Prashant

2014-10-01

Copper metal can provide an important alternative for the development of efficient, low-cost and low-loss plasmonic nanoparticles, and selective nanocatalysts. However, poor chemical stability and lack of insight into photophysics and plasmon decay mechanisms has impeded study. Here, we use smooth conformal ALD coating on copper nanoparticles to prevent surface oxidation, and study dephasing time for localized surface plasmons on different sized copper nanoparticles. Using dephasing time as a figure of merit, we elucidate the role of electron-electron, electron-phonon, impurity, surface and grain boundary scattering on the decay of localized surface plasmon waves. Using our quantitative analysis and different temperature dependent measurements, we show that electron-phonon interactions dominate over other scattering mechanisms in dephasing plasmon waves. While interband transitions in copper metal contributes substantially to plasmon losses, tuning surface plasmon modes to infrared frequencies leads to a five-fold enhancement in the quality factor. These findings demonstrate that conformal ALD coatings can improve the chemical stability for copper nanoparticles, even at high temperatures (>300 °C) in ambient atmosphere, and nanoscaled copper is a good alternative material for many potential applications in nanophotonics, plasmonics, catalysis and nanoscale electronics.Copper metal can provide an important alternative for the development of efficient, low-cost and low-loss plasmonic nanoparticles, and selective nanocatalysts. However, poor chemical stability and lack of insight into photophysics and plasmon decay mechanisms has impeded study. Here, we use smooth conformal ALD coating on copper nanoparticles to prevent surface oxidation, and study dephasing time for localized surface plasmons on different sized copper nanoparticles. Using dephasing time as a figure of merit, we elucidate the role of electron-electron, electron-phonon, impurity, surface and grain boundary scattering on the decay of localized surface plasmon waves. Using our quantitative analysis and different temperature dependent measurements, we show that electron-phonon interactions dominate over other scattering mechanisms in dephasing plasmon waves. While interband transitions in copper metal contributes substantially to plasmon losses, tuning surface plasmon modes to infrared frequencies leads to a five-fold enhancement in the quality factor. These findings demonstrate that conformal ALD coatings can improve the chemical stability for copper nanoparticles, even at high temperatures (>300 °C) in ambient atmosphere, and nanoscaled copper is a good alternative material for many potential applications in nanophotonics, plasmonics, catalysis and nanoscale electronics. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr04719b

Increased electron temperature turbulence during suppression of edge localized mode by resonant magnetic perturbations in the DIII-D tokamak [Increased electron temperature turbulence during edge localized mode (ELM) suppression by resonant magnetic perturbations (RMPs) in the DIII-D tokamak

DOE PAGES

Sung, Choongki; Wang, G.; Rhodes, Terry L.; ...

2017-11-16

We report the first observation of increased edge electron temperature turbulence correlated with changes in gradients and the ELM suppression time which occurs after the application of resonant magnetic perturbations (RMP) on DIII-D H-mode plasmas. This increase (T ~ e/T e approximately doubles) occurs in the region extending from the top of the pedestal outward to the upper part of the edge steep gradient region. This is significant as it is consistent with increased turbulence driven transport potentially replacing some part of the edge localized mode (ELM) driven transport. However, temperature turbulence does not change with the initial RMP applicationmore » while ELMs are still present, indicating the turbulence changes are not causative in the development of ELM suppression or initial profile evolution with RMP – but rather a response to these effects. This temperature turbulence is broadband and long wavelength, k θρ s < 0.5, where k θ = poloidal wavenumber, ρ s = ion sound gyroradius. As has been reported previously, long wavelength density turbulence (k θρ s < 1.0) in the same location also increases after ELMs were suppressed by the RMP. Since the decrease of the density starts nearly immediately with RMP application, these results suggest that the so-called RMP “density pump-out” is not linked to these long wavelength turbulent transport changes. Comparison with linear stability analysis finds both consistencies and inconsistencies in this important region.« less

Increased electron temperature turbulence during suppression of edge localized mode by resonant magnetic perturbations in the DIII-D tokamak [Increased electron temperature turbulence during edge localized mode (ELM) suppression by resonant magnetic perturbations (RMPs) in the DIII-D tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sung, Choongki; Wang, G.; Rhodes, Terry L.

We report the first observation of increased edge electron temperature turbulence correlated with changes in gradients and the ELM suppression time which occurs after the application of resonant magnetic perturbations (RMP) on DIII-D H-mode plasmas. This increase (T ~ e/T e approximately doubles) occurs in the region extending from the top of the pedestal outward to the upper part of the edge steep gradient region. This is significant as it is consistent with increased turbulence driven transport potentially replacing some part of the edge localized mode (ELM) driven transport. However, temperature turbulence does not change with the initial RMP applicationmore » while ELMs are still present, indicating the turbulence changes are not causative in the development of ELM suppression or initial profile evolution with RMP – but rather a response to these effects. This temperature turbulence is broadband and long wavelength, k θρ s < 0.5, where k θ = poloidal wavenumber, ρ s = ion sound gyroradius. As has been reported previously, long wavelength density turbulence (k θρ s < 1.0) in the same location also increases after ELMs were suppressed by the RMP. Since the decrease of the density starts nearly immediately with RMP application, these results suggest that the so-called RMP “density pump-out” is not linked to these long wavelength turbulent transport changes. Comparison with linear stability analysis finds both consistencies and inconsistencies in this important region.« less

Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing.

PubMed

Fang, F; Markwitz, A

2009-05-01

Silicon nanostructures, called Si nanowhiskers, are successfully synthesized on Si(100) substrate by high vacuum electron beam annealing. The onset temperature and duration needed for the Si nanowhiskers to grow was investigated. It was found that the onset and growth morphology of Si nanowhiskers strongly depend on the annealing temperature and duration applied in the annealing cycle. The onset temperature for nanowhisker growth was determined as 680 degrees C using an annealing duration of 90 min and temperature ramps of +5 degrees C s(-1) for heating and -100 degrees C s(-1) for cooling. Decreasing the annealing time at peak temperature to 5 min required an increase in peak temperature to 800 degrees C to initiate the nanowhisker growth. At 900 degrees C the duration for annealing at peak temperature can be set to 0 s to grow silicon nanowhiskers. A correlation was found between the variation in annealing temperature and duration and the nanowhisker height and density. Annealing at 900 degrees C for 0 s, only 2-3 nanowhiskers (average height 2.4 nm) grow on a surface area of 5 x 5 microm, whereas more than 500 nanowhiskers with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 degrees C for 0 s. Selected results are presented showing the possibility of controlling the density and height of Si nanowhisker growth for field emission applications by applying different annealing temperature and duration.

Observation of strong Kondo like features and co-tunnelling in superparamagnetic GdCl3 filled 1D nanomagnets

NASA Astrophysics Data System (ADS)

Ncube, S.; Coleman, C.; de Sousa, A. S.; Nie, C.; Lonchambon, P.; Flahaut, E.; Strydom, A.; Bhattacharyya, S.

2018-06-01

Filling of carbon nanotubes has been tailored over years to modify the exceptional properties of the 1-dimensional conductor for magnetic property based applications. Hence, such a system exploits the spin and charge property of the electron, analogous to a quantum conductor coupled to magnetic impurities, which poses an interesting scenario for the study of Kondo physics and related phenomena. We report on the electronic transport properties of MWNTs filled with GdCl3 nanomagnets, which clearly show the co-existence of Kondo correlation and cotunelling within the superparamagnetic limit. The Fermi liquid description of the Kondo effect and the interpolation scheme are fitted to the resistance-temperature dependence yielding the onset of the Kondo scattering temperature and a Kondo temperature for this nanocomposite, respectively. Cotunneling of conduction electrons interfering with a Kondo type interaction has been verified from the exponential decay of the intensity of the fano shaped nonzero bias anomalous conductance peaks, which also show strong resonant features observed only in GdCl3 filled MWNT devices. Hence, these features are explained in terms of magnetic coherence and spin-flip effects along with the competition between the Kondo effect and co-tunneling. This study raises a new possibility of tailoring magnetic interactions for spintronic applications in carbon nanotube systems.

Calculation of the figure of merit for carbon nanotubes based devices

NASA Astrophysics Data System (ADS)

Vaseashta, Ashok

2004-03-01

The dimensionality of a system has a profound influence on its physical behavior. With advances in technology over the past few decades, it has become possible to fabricate and study reduced-dimensional systems in which electrons are strongly confined in one or more dimensions. In the case of 1-D electron systems, most of the results, such as conductance quantization, have been explained in terms of non-interacting electrons. In contrast to the cases of 2D and 3D systems, the question of what roles electron-electron interactions play in real 1-D systems has been difficult to address, because of the difficulty in obtaining long, relatively disorder free 1-D wires. Since their first discovery and fabrication in 1991, carbon nanotubes (CNTs) have received considerable attention because of the prospect of new fundamental science and many potential applications. Hence, it has been possible to conduct studies of the electrons in 1-D. Carbon nanotubes are of considerable technological importance due to their excellent mechanical, electrical, and chemical characteristics. The potential technological applications include electronics, opto-electronics and biomedical sensors. The applications of carbon nanotubes include quantum wire interconnects, diodes and transistors for computing, capacitors, data storage devices, field emitters, flat panel displays and terahertz oscillators. One of the most remarkable characteristics is the possibility of bandgap engineering by controlling the microstructure. Hence, a pentagon-heptagon defect in the hexagonal network can connect a metallic to a semiconductor nanotube, providing an Angstrom-scale hetero-junction with a device density approximately 10^4 times greater than present day microelectronics. Also, successfully contacted carbon nanotubes have exhibited a large number of useful quantum electronic and low dimensional transport phenomena, such as true quantum wire behaviors, room temperature field effect transistors, room temperature single electron transistors, Luttinger-liquid behavior, the Aharonov Bohm effect, and Fabry-Perot interference effects. Hence it is evident that CNT can be used for a variety of applications. To use CNT based devices, it is critical to know the relative advantage of using CNTs over other known electronic materials. The figure of merit for CNT based devices is not reported so far. It is the objective of this investigation to calculate the figure of merit and present such results. Such calculations will enable researchers to focus their research for specific device designs where CNT based devices show a marked improvement over conventional semiconductor devices.

Silicon Carbide Nanotube Synthesized

NASA Technical Reports Server (NTRS)

Lienhard, Michael A.; Larkin, David J.

2003-01-01

Carbon nanotubes (CNTs) have generated a great deal of scientific and commercial interest because of the countless envisioned applications that stem from their extraordinary materials properties. Included among these properties are high mechanical strength (tensile and modulus), high thermal conductivity, and electrical properties that make different forms of single-walled CNTs either conducting or semiconducting, and therefore, suitable for making ultraminiature, high-performance CNT-based electronics, sensors, and actuators. Among the limitations for CNTs is their inability to survive in high-temperature, harsh-environment applications. Silicon carbon nanotubes (SiCNTs) are being developed for their superior material properties under such conditions. For example, SiC is stable in regards to oxidation in air to temperatures exceeding 1000 C, whereas carbon-based materials are limited to 600 C. The high-temperature stability of SiCNTs is envisioned to enable high-temperature, harsh-environment nanofiber- and nanotube-reinforced ceramics. In addition, single-crystal SiC-based semiconductors are being developed for hightemperature, high-power electronics, and by analogy to CNTs with silicon semiconductors, SiCNTs with single-crystal SiC-based semiconductors may allow high-temperature harsh-environment nanoelectronics, nanosensors, and nanoactuators to be realized. Another challenge in CNT development is the difficulty of chemically modifying the tube walls, which are composed of chemically stable graphene sheets. The chemical substitution of the CNTs walls will be necessary for nanotube self-assembly and biological- and chemical-sensing applications. SiCNTs are expected to have a different multiple-bilayer wall structure, allowing the surface Si atoms to be functionalized readily with molecules that will allow SiCNTs to undergo self-assembly and be compatible with a variety of materials (for biotechnology applications and high-performance fiber-reinforced ceramics).

Computation of dark frames in digital imagers

NASA Astrophysics Data System (ADS)

Widenhorn, Ralf; Rest, Armin; Blouke, Morley M.; Berry, Richard L.; Bodegom, Erik

2007-02-01

Dark current is caused by electrons that are thermally exited into the conduction band. These electrons are collected by the well of the CCD and add a false signal to the chip. We will present an algorithm that automatically corrects for dark current. It uses a calibration protocol to characterize the image sensor for different temperatures. For a given exposure time, the dark current of every pixel is characteristic of a specific temperature. The dark current of every pixel can therefore be used as an indicator of the temperature. Hot pixels have the highest signal-to-noise ratio and are the best temperature sensors. We use the dark current of a several hundred hot pixels to sense the chip temperature and predict the dark current of all pixels on the chip. Dark current computation is not a new concept, but our approach is unique. Some advantages of our method include applicability for poorly temperature-controlled camera systems and the possibility of ex post facto dark current correction.

EPR-based distance measurements at ambient temperature.

PubMed

Krumkacheva, Olesya; Bagryanskaya, Elena

2017-07-01

Pulsed dipolar (PD) EPR spectroscopy is a powerful technique allowing for distance measurements between spin labels in the range of 2.5-10.0nm. It was proposed more than 30years ago, and nowadays is widely used in biophysics and materials science. Until recently, PD EPR experiments were limited to cryogenic temperatures (T<80K). Recently, application of spin labels with long electron spin dephasing time at room temperature such as triarylmethyl radicals and nitroxides with bulky substituents at a position close to radical centers enabled measurements at room temperature and even at physiologically relevant temperatures by PD EPR as well as other approaches based on EPR (e.g., relaxation enhancement; RE). In this paper, we review the features of PD EPR and RE at ambient temperatures, in particular, requirements on electron spin phase memory time, ways of immobilization of biomolecules, the influence of a linker between the spin probe and biomolecule, and future opportunities. Copyright © 2017 Elsevier Inc. All rights reserved.

The low-temperature method for study of coniferous tissues in the environmental scanning electron microscope.

PubMed

Neděla, Vilém; Tihlaříková, Eva; Hřib, Jiří

2015-01-01

The use of non-standard low-temperature conditions in environmental scanning electron microscopy might be promising for the observation of coniferous tissues in their native state. This study is aimed to analyse and evaluate the method based on the principle of low-temperature sample stabilization. We demonstrate that the upper mucous layer is sublimed and a microstructure of the sample surface can be observed with higher resolution at lower gas pressure conditions, thanks to a low-temperature method. An influence of the low-temperature method on sample stability was also studied. The results indicate that high-moisture conditions are not suitable for this method and often cause the collapse of samples. The potential improvement of stability to beam damage has been demonstrated by long-time observation at different operation parameters. We finally show high applicability of the low-temperature method on different types of conifers and Oxalis acetosella. © 2014 Wiley Periodicals, Inc.

Characterization of solar cells for space applications. Volume 6: Electrical characteristics of Spectrolab BSF, BSR, textured, 10 ohm-cm, 50 micron advanced OAST solar cells as a function of intensity, temperature, and irradiation

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Downing, R. G.; Miyahira, T. F.; Weiss, R. S.

1979-01-01

Electrical parametric data are presented on BSF, BSR, textured 10 ohm cm, 50 micron advanced OAST cells in graphical and tabular form as functions of solar illumination intensity, temperature, and 1 MeV electron fluence.

Designing Two-Dimensional Dirac Heterointerfaces of Few-Layer Graphene and Tetradymite-Type Sb2Te3 for Thermoelectric Applications.

PubMed

Jang, Woosun; Lee, Jiwoo; In, Chihun; Choi, Hyunyong; Soon, Aloysius

2017-12-06

Despite the ubiquitous nature of the Peltier effect in low-dimensional thermoelectric devices, the influence of finite temperature on the electronic structure and transport in the Dirac heterointerfaces of the few-layer graphene and layered tetradymite, Sb 2 Te 3 (which coincidently have excellent thermoelectric properties) are not well understood. In this work, using the first-principles density-functional theory calculations, we investigate the detailed atomic and electronic structure of these Dirac heterointerfaces of graphene and Sb 2 Te 3 and further re-examine the effect of finite temperature on the electronic band structures using a phenomenological temperature-broadening model based on Fermi-Dirac statistics. We then proceed to understand the underlying charge redistribution process in this Dirac heterointerfaces and through solving the Boltzmann transport equation, we present the theoretical evidence of electron-hole asymmetry in its electrical conductivity as a consequence of this charge redistribution mechanism. We finally propose that the hexagonal-stacked Dirac heterointerfaces are useful as efficient p-n junction building blocks in the next-generation thermoelectric devices where the electron-hole asymmetry promotes the thermoelectric transport by "hot" excited charge carriers.

AMOLED (active matrix OLED) functionality and usable lifetime at temperature

NASA Astrophysics Data System (ADS)

Fellowes, David A.; Wood, Michael V.; Prache, Olivier; Jones, Susan

2005-05-01

Active Matrix Organic Light Emitting Diode (AMOLED) displays are known to exhibit high levels of performance, and these levels of performance have continually been improved over time with new materials and electronics design. eMagin Corporation developed a manually adjustable temperature compensation circuit with brightness control to allow for excellent performance over a wide temperature range. Night Vision and Electronic Sensors Directorate (US Army) tested the performance and survivability of a number of AMOLED displays in a temperature chamber over a range from -55°C to +85°C. Although device performance of AMOLEDs has always been its strong suit, the issue of usable display lifetimes for military applications continues to be an area of discussion and research. eMagin has made improvements in OLED materials and worked towards the development of a better understanding of usable lifetime for operation in a military system. NVESD ran luminance degradation tests of AMOLED panels at 50°C and at ambient to characterize the lifetime of AMOLED devices. The result is a better understanding of the applicability of AMOLEDs in military systems: where good fits are made, and where further development is needed.

Increased electron temperature turbulence during suppression of edge localized mode by resonant magnetic perturbations in the DIII-D tokamak

NASA Astrophysics Data System (ADS)

Sung, C.; Wang, G.; Rhodes, T. L.; Smith, S. P.; Osborne, T. H.; Ono, M.; McKee, G. R.; Yan, Z.; Groebner, R. J.; Davis, E. M.; Zeng, L.; Peebles, W. A.; Evans, T. E.

2017-11-01

The first observation of increased electron temperature turbulence during edge localized mode (ELM) suppression by resonant magnetic perturbations (RMPs) is presented. These are long wavelength fluctuations (kθρs ≤ 0.2, where kθ = poloidal wavenumber and ρs = ion sound gyroradius) observed during H-mode plasmas on the DIII-D. This increase occurs only after ELMs are suppressed and are not observed during the initial RMP application. The T˜ e/Te increases ( >60%) are coincident with changes in normalized density and electron temperature gradients in the region from the top of the pedestal outward to the upper portion of the steep edge gradient. Density turbulence (kθρs ≤ 0.4) in this location was also observed to increase only after ELM suppression. These results are significant since they indicate that increased gradient-driven turbulent transport is one possible mechanism to regulate and maintain ELM-free H-mode operation. Investigation of linear stability of drift wave instabilities using the CGYRO code [Candy et al., J. Comput. Phys. 324, 73 (2016)] shows that the dominant mode moves closer to the electron mode branch from the ion mode branch only after ELMs are suppressed, correlated with the increased turbulence. The increased turbulence during ELM suppression, rather than with the initial RMP application, indicates that the often observed RMP induced "density pump-out" cannot be attributed to long wavelength edge turbulence level changes.

Cryogenics and its application with reference to spice grinding: a review.

PubMed

Balasubramanian, S; Gupta, Manoj Kumar; Singh, K K

2012-01-01

Cryogenics is the study of very low temperature and its application on different materials including biological products. Cryogenics has numerous applications in space science, electronics, automobiles, the manufacturing industry, sports and musical instruments, biological science and agriculture, etc. Cryogenic freezing finds pivotal application in food, that is, spices and condiments. Although there is a wide range of cryogens to produce the desired low temperature, generally liquid nitrogen (LN₂) is used in food grinding. The application of low temperature shows a promising pathway to produce higher quality end product with higher flavor and volatile oil retention. Cryogenic grinders generally consist of precoolers and grinder with the cryogen distribution system. In such grinding systems, cryogens subject the raw material up to or lower than glass transition temperature before it is ground, thus eliminating much of the material and quality hassles of traditional grinding. At present, the capital investment including cryogen and handling costs escalate the final cost of the product. Thus, for large-scale production, a proper design to optimize and make it feasible is the need of the hour and understanding the behavior of different food materials at these low temperature conditions. This article reviews the scenario and application of cryogenics in different sectors, especially to spice grinding.

High temperature dielectric studies of indium-substituted NiCuZn nanoferrites

NASA Astrophysics Data System (ADS)

Hashim, Mohd.; Raghasudha, M.; Shah, Jyoti; Shirsath, Sagar E.; Ravinder, D.; Kumar, Shalendra; Meena, Sher Singh; Bhatt, Pramod; Alimuddin; Kumar, Ravi; Kotnala, R. K.

2018-01-01

In this study, indium (In3+)-substituted NiCuZn nanostructured ceramic ferrites with a chemical composition of Ni0.5Cu0.25Zn0.25Fe2-xInxO4 (0.0 ≤ x ≤ 0.5) were prepared by chemical synthesis involving sol-gel chemistry. Single phased cubic spinel structure materials were prepared successfully according to X-ray diffraction and transmission electron microscopy analyses. The dielectric properties of the prepared ferrites were measured using an LCR HiTester at temperatures ranging from room temperature to 300 °C at different frequencies from 102 Hz to 5 × 106 Hz. The variations in the dielectric parameters ε‧ and (tanδ) with temperature demonstrated the frequency- and temperature-dependent characteristics due to electron hopping between the ions. The materials had low dielectric loss values in the high frequency range at all temperatures, which makes them suitable for high frequency microwave applications. A qualitative explanation is provided for the dependences of the dielectric constant and dielectric loss tangent on the frequency, temperature, and composition. Mӧssbauer spectroscopy was employed at room temperature to characterize the magnetic behavior.

SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

NASA Astrophysics Data System (ADS)

Godignon, P.; Alexandru, M.; Banu, V.; Montserrat, J.; Jorda, X.; Vellvehi, M.; Schmidt, B.; Michel, P.; Millan, J.

2014-08-01

The currently developed SiC electronic devices are more robust to high temperature operation and radiation exposure damage than correspondingly rated Si ones. In order to integrate the existent SiC high power and high temperature electronics into more complex systems, a SiC integrated circuit (IC) technology capable of operation at temperatures substantially above the conventional ones is required. Therefore, this paper is a step towards the development of ICs-control electronics that have to attend the harsh environment power applications. Concretely, we present the development of SiC MESFET-based digital circuitry, able to integrate gate driver for SiC power devices. Furthermore, a planar lateral power MESFET is developed with the aim of its co-integration on the same chip with the previously mentioned SiC digital ICs technology. And finally, experimental results on SiC Schottky-gated devices irradiated with protons and electrons are presented. This development is based on the Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

Whistler Waves With Electron Temperature Anisotropy And Non-Maxwellian Distribution Functions

NASA Astrophysics Data System (ADS)

Masood, W.

2017-12-01

Low frequency waves (˜ 100Hz), popularly known as Lion roars, are ubiquitously observed by satellites in terrestrial magnetosheath. By dint of both wave and electron data from the Cluster spacecraft and employing the linear kinetic theory for the electromagnetic waves, Masood et. al. (Ann. Geophysicae. 24, 1725-1735 (2006)) examined the conjecture made by Thorne and Tsurutani (Nature, 93, 384 (1981)) that whistler waves with electron temperature anisotropy are the progenitors of lion roars. It turned out that the study based upon the bi-Maxwellian distribution function did not come up with a satisfactory explanation of certain disagreements between theory and data. In this paper, we revisit the problem using the generalized (r, q) distribution to carry out the linear stability analysis. It is shown that good qualitative and quantitative agreements are found between theory and data using this distribution. Whistler waves with electron temperature anisotropy are also investigated with other non-Maxwellian distribution functions and general comparison is made in the end and differences in each case are highlighted. The possible applications in space plasmas are also pointed out.

A novel analytical model for scattering limited electron transport in nano-dimensional InAlAs/InGaAs heterostructure for cryogenic applications

NASA Astrophysics Data System (ADS)

Sharma, Neetika; Verma, Neha; Jogi, Jyotika

2017-11-01

This paper models the scattering limited electron transport in a nano-dimensional In0.52Al0.48As/In0.53Ga0.47As/InP heterostructure. An analytical model for temperature dependent sheet carrier concentration and carrier mobility in a two dimensional electron gas, confined in a triangular potential well has been developed. The model accounts for all the major scattering process including ionized impurity scattering and lattice scattering. Quantum mechanical variational technique is employed for studying the intrasubband scattering mechanism in the two dimensional electron gas. Results of various scattering limited structural parameters such as energy band-gap and functional parameters such as sheet carrier concentration, scattering rate and mobility are presented. The model corroborates the dominance of ionized impurity scattering mechanism at low temperatures and that of lattice scattering at high temperatures, both in turn limiting the carrier mobility. Net mobility obtained taking various scattering mechanisms into account has been found in agreement with earlier reported results, thus validating the model.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Weihuan; France, David M.; Yu, Wenhua

At present, single-phase liquid, forced convection cooled heat sinks with fins are used to cool power electronics in hybrid electric vehicles (HEVs). Although use of fins in the cooling channels increases heat transfer rates considerably, a second low-temperature radiator and associated pumping system are still required in HEVs. This additional cooling system adds weight and cost while decreasing the efficiency of HEVs. With the objective of eliminating this additional low-temperature radiator and pumping system in HEVs, an alternative cooling technology, subcooled boiling in the cooling channels, was investigated in the present study. Numerical heat transfer simulations were performed using subcooledmore » boiling in the power electronics cooling channels with the coolant supplied from the existing main engine cooling system. Results show that this subcooled boiling system is capable of removing 25% more heat from the power electronics than the conventional forced convection cooling technology, or it can reduce the junction temperature of the power electronics at the current heat removal rate. With the 25% increased heat transfer option, high heat fluxes up to 250 W/cm(2) (typical for wideband-gap semiconductor applications) are possible by using the subcooled boiling system.« less

Application Specific Electronic Module Program (ASEM), Final Technical Report.

DTIC Science & Technology

1994-12-14

relatively high temperatures , may induce a metal break or other continuity problems. Secondly, the improved electrical environment at the module level vs...wafer probe can permit higher speed tests to be applied, isolating marginal die. Thirdly, high reliability screens, such as temperature cycling, bum-in...The high temperature aging is done at 150’ C for 500 hours. The thermal cycle treatments are from 0- 100 0 C and 3 cycles per hour are done. The

Charging and heat collection by a positively charged dust grain in a plasma.

PubMed

Delzanno, Gian Luca; Tang, Xian-Zhu

2014-07-18

Dust particulates immersed in a quasineutral plasma can emit electrons in several important applications. Once electron emission becomes strong enough, the dust enters the positively charged regime where the conventional orbital-motion-limited (OML) theory can break down due to potential-well effects on trapped electrons. A minimal modification of the trapped-passing boundary approximation in the so-called OML(+) approach is shown to accurately predict the dust charge and heat collection flux for a wide range of dust size and temperature.

Two-dimensional tantalum disulfide: controlling structure and properties via synthesis

NASA Astrophysics Data System (ADS)

Zhao, Rui; Grisafe, Benjamin; Krishna Ghosh, Ram; Holoviak, Stephen; Wang, Baoming; Wang, Ke; Briggs, Natalie; Haque, Aman; Datta, Suman; Robinson, Joshua

2018-04-01

Tantalum disulfide (TaS2) is a transition metal dichalcogenide (TMD) that exhibits phase transition induced electronic property modulation at low temperature. However, the appropriate phase must be grown to enable the semiconductor/metal transition that is of interest for next generation electronic applications. In this work, we demonstrate direct and controllable synthesis of ultra-thin 1T-TaS2 and 2H-TaS2 on a variety of substrates (sapphire, SiO2/Si, and graphene) via powder vapor deposition. The synthesis process leads to single crystal domains ranging from 20 to 200 nm thick and 1-10 µm on a side. The TaS2 phase (1T or 2H) is controlled by synthesis temperature, which subsequently is shown to control the electronic properties. Furthermore, this work constitutes the first demonstration of a metal-insulator phase transition in directly synthesized 1T-TaS2 films and domains by electronic means.

Enhanced electron/fuel-ion equilibration through impurity ions: Studies applicable to NIF and Omega

NASA Astrophysics Data System (ADS)

Petrasso, R. D.; Sio, H.; Kabadi, N.; Lahmann, B.; Simpson, R.; Parker, C.; Frenje, J.; Gatu Johnson, M.; Li, C. K.; Seguin, F. H.; Rinderknecht, H.; Casey, D.; Grabowski, P.; Graziani, F.; Taitano, W.; Le, A.; Chacon, L.; Hoffman, N.; Kagan, G.; Simakov, A.; Zylstra, A.; Rosenberg, M.; Betti, R.; Srinivasan, B.; Mancini, R.

2017-10-01

In shock-driven exploding-pushers, a platform used extensively to study multi-species and kinetic effects, electrons and fuel ions are far out of equilibrium, as reflected by very different temperatures. However, impurity ions, even in small quantities, can couple effectively to the electrons, because of a Z2 dependence, and in turn, impurity ions can then strongly couple to the fuel ions. Through this mechanism, electrons and fuel-ions can equilibrate much faster than they otherwise would. This is a quantitative issue, depending upon the amount and Z of the impurity. For NIF and Omega, we consider the role of this process. Coupled non-linear equations, reflecting the temperatures of the three species, are solved for a range of conditions. Consideration is also given to ablatively driven implosions, since impurities can similarly affect the equilibration. This work was supported in part by DOE/NNSA DE-NA0002949 and DE-NA0002726.

LaTiO₃/KTaO₃ interfaces: A new two-dimensional electron gas system

DOE PAGES

Zou, K.; Ismail-Beigi, Sohrab; Kisslinger, Kim; ...

2015-03-01

We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO₃, and a band insulator, KTaO₃. For LaTiO₃/KTaO₃ interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO₃-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm²/V s) of SrTiO₃ at room temperature. By using KTaO₃, we achieve mobilities in LaTiO₃/KTaO₃ interfaces as high as 21 cm²/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO₃. By density functional theory, we attribute the higher mobilitymore » in KTaO₃ 2DEGs to the smaller effective mass for electrons in KTaO₃.« less

Self-absorption characteristics of measured laser-induced plasma line shapes

NASA Astrophysics Data System (ADS)

Parigger, C. G.; Surmick, D. M.; Gautam, G.

2017-02-01

The determination of electron density and temperature is reported from line-of-sight measurements of laser-induced plasma. Experiments are conducted in standard ambient temperature and pressure air and in a cell containing ultra-high-pure hydrogen slightly above atmospheric pressure. Spectra of the hydrogen Balmer series lines can be measured in laboratory air due to residual moisture following optical breakdown generated with 13 to 14 nanosecond, pulsed Nd:YAG laser radiation. Comparisons with spectra obtained in hydrogen gas yields Abel-inverted line shape appearances that indicate occurrence of self-absorption. The electron density and temperature distributions along the line of sight show near-spherical rings, expanding at or near the speed of sound in the hydrogen gas experiments. The temperatures in the hydrogen studies are obtained using Balmer series alpha, beta, gamma profiles. Over and above the application of empirical formulae to derive the electron density from hydrogen alpha width and shift, and from hydrogen beta width and peak-separation, so-called escape factors and the use of a doubling mirror are discussed.

Thermal stability of MBE-grown epitaxial MoSe2 and WSe2 thin films

NASA Astrophysics Data System (ADS)

Chang, Young Jun; Choy, Byoung Ki; Phark, Soo-Hyon; Kim, Minu

Layered transition metal dichalcogenides (TMDs) draw much attention, because of its unique optical properties and band structures depending on the layer thicknesses. However, MBE growth of epitaxial films demands information about thermal stability of stoichiometry and related electronic structure for high temperature range. We grow epitaxial MoSe2 and WSe2 ultrathin films by using molecular beam epitaxy (MBE). We characterize stoichiometry of films grown at various growth temperature by using various methods, XPS, EDX, and TOF-MEIS. We further test high temperature stability of electronic structure for those films by utilizing in-situ ellipsometry attached to UHV chamber. We discuss threshold temperatures up to 700~1000oC, at which electronic phases changes from semiconductor to metal due to selenium deficiency. This information can be useful for potential application of TMDs for fabrication of Van der Waals multilayers and related devices. This research was supported by Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580), NRF-2014R1A1A1002868.

Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Bansal, Gaurav; Petit, Jeremy B.; Knight, Dak; Liu, Chung-Chiun; Wu, Qinghai

1996-01-01

Pd/SiC Schottky diodes detect hydrogen and hydrocarbons with high sensitivity. Variation of the diode temperature from 100 C to 200 C shows that the diode sensitivity to propylene is temperature dependent. Long-term heat treating at 425 C up to 140 hours is carried out to determine the effect of extended heat treating on the diode properties and gas sensitivity. The heat treating significantly affects the diode's capacitive characteristics, but the diode's current carrying characteristics are much more stable with a large response to hydrogen. Scanning Electron Microscopy and X-ray Spectrometry studies of the Pd surface after the heating show cluster formation and background regions with grain structure observed in both regions. The Pd and Si concentrations vary between grains. Auger Electron Spectroscopy depth profiles revealed that the heat treating promoted interdiffusion and reaction between the Pd and SiC dw broadened the interface region. This work shows that Pd/SiC Schottky diodes have significant potential as high temperature gas sensors, but stabilization of the structure is necessary to insure their repeatability in long-term, high temperature applications.

One-step synthesis of multi-emission carbon nanodots for ratiometric temperature sensing

NASA Astrophysics Data System (ADS)

Nguyen, Vanthan; Yan, Lihe; Xu, Huanhuan; Yue, Mengmeng

2018-01-01

Measuring temperature with greater precision at localized small length scales or in a nonperturbative manner is a necessity in widespread applications, such as integrated photonic devices, micro/nano electronics, biology, and medical diagnostics. To this context, use of nanoscale fluorescent temperature probes is regarded as the most promising method for temperature sensing because they are noninvasive, accurate, and enable remote micro/nanoscale imaging. Here, we propose a novel ratiometric fluorescent sensor for nanothermometry using carbon nanodots (C-dots). The C-dots were synthesized by one-step method using femtosecond laser ablation and exhibit unique multi-emission property due to emissions from abundant functional groups on its surface. The as-prepared C-dots demonstrate excellent ratiometric temperature sensing under single wavelength excitation that achieves high temperature sensitivity with a 1.48% change per °C ratiometric response over wide-ranging temperature (5-85 °C) in aqueous buffer. The ratiometric sensor shows excellent reversibility and stability, holding great promise for the accurate measurement of temperature in many practical applications.

Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum.

PubMed

Seifert, Marietta; Rane, Gayatri K; Kirbus, Benjamin; Menzel, Siegfried B; Gemming, Thomas

2015-12-19

Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 ) substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

Thermionic Energy

NASA Technical Reports Server (NTRS)

1985-01-01

Thermionic energy conversion is the production of energy from a nuclear source. It is a technology advanced by SNSO, a joint research and development organization formed by NASA and the AEC. SNSO contracted with Thermo Electron Corporation to develop high temperature applications, i.e., metals with high melting points. Thermo Electron Corporation's expertise resulted in contracts for products made from exotic metals such as bone implants, artificial hips, and heart pacemakers.

Low Temperature Graphene Growth and Its Applications in Electronic and Optical Devices

NASA Astrophysics Data System (ADS)

Chugh, Sunny

Graphene, a two dimensional allotrope of carbon in a honeycomb lattice, has gathered wide attention due to its excellent electrical, thermal, optical and mechanical properties. It has extremely high electron/hole mobility, very high thermal conductivity and fascinating optical properties, and combined with its mechanical strength and elasticity, graphene is believed to find commercial applications in existing as well as novel technologies. One of the biggest reasons behind the rapid development in graphene research during the last decade is the fact that laboratory procedures to obtain high quality graphene are rather cheap and simple. However, any new material market is essentially driven by the progress in its large scale commercial production with minimal costs, with properties that are suited for different applications. And it is in this aspect that graphene is still required to make a huge progress before its commercial benefits can be derived. Laboratory graphene synthesis techniques such as mechanical exfoliation, liquid phase exfoliation and SiC graphene growth pose several challenges in terms of cost, reliability and scalability. To this end, Chemical Vapor Deposition (CVD) growth of graphene has emerged as a widely used synthesis method that overcomes these problems. Unfortunately, conventional thermal CVD requires a high temperature of growth and a catalytic metal substrate, making the undesirable step of graphene transfer a necessity. Besides requiring a catalyst, the high temperature of growth also limits the range of growth substrates. In this work, I have successfully demonstrated low temperature ( 550 °C) growth of graphene directly on dielectric materials using a Plasma-Enhanced CVD (PECVD) process. The PECVD technique described here solves the issues faced by conventional CVD methods and provides a direct route for graphene synthesis on arbitrary materials at relatively low temperatures. Detailed growth studies, as described here, illustrate the difference between the PECVD and the CVD growth mechanisms. This work also provides the first experimental comparison of graphene growth rates on different substrates using PECVD. In the second part of my thesis, I have discussed some of the potential applications of PECVD graphene, including graphene as a diffusion barrier, ultra-dark graphene metamaterials, graphene-protected metal plasmonics and copper-graphene hybrids for RF transmission line applications. The experimental findings discussed here lay a solid platform for integration of graphene in damascene structures, low-loss plasmonic materials, flexible electronics and dark materials, among others.

Improved analysis techniques for cylindrical and spherical double probes.

PubMed

Beal, Brian; Johnson, Lee; Brown, Daniel; Blakely, Joseph; Bromaghim, Daron

2012-07-01

A versatile double Langmuir probe technique has been developed by incorporating analytical fits to Laframboise's numerical results for ion current collection by biased electrodes of various sizes relative to the local electron Debye length. Application of these fits to the double probe circuit has produced a set of coupled equations that express the potential of each electrode relative to the plasma potential as well as the resulting probe current as a function of applied probe voltage. These equations can be readily solved via standard numerical techniques in order to determine electron temperature and plasma density from probe current and voltage measurements. Because this method self-consistently accounts for the effects of sheath expansion, it can be readily applied to plasmas with a wide range of densities and low ion temperature (T(i)/T(e) ≪ 1) without requiring probe dimensions to be asymptotically large or small with respect to the electron Debye length. The presented approach has been successfully applied to experimental measurements obtained in the plume of a low-power Hall thruster, which produced a quasineutral, flowing xenon plasma during operation at 200 W on xenon. The measured plasma densities and electron temperatures were in the range of 1 × 10(12)-1 × 10(17) m(-3) and 0.5-5.0 eV, respectively. The estimated measurement uncertainty is +6%∕-34% in density and +∕-30% in electron temperature.

Low Temperature Deposition and Characterization of N- and P-Type Silicon Carbide Thin Films and Associated Ohmic and Schottky Contacts

DTIC Science & Technology

1993-12-01

properties which make it an attractive material for electronic devices used in high temperature and power applications. In order to make useful...remote plasma chamber. The processing parameters were a pressure of 18 mTorr and a power output of 20 Watts; a flow of 10 sccm of hydrogen gas was...Table I. Growth Conditions for the AIN films Temperature 1050 C Al evaporation temperature 1260 "C Nitrogen flow rate 3.5 sccrn Microwave power 100W

Back-bombardment compensation in microwave thermionic electron guns

NASA Astrophysics Data System (ADS)

Kowalczyk, Jeremy M. D.; Madey, John M. J.

2014-12-01

The development of capable, reliable, and cost-effective compact electron beam sources remains a long-standing objective of the efforts to develop the accelerator systems needed for on-site research and industrial applications ranging from electron beam welding to high performance x-ray and gamma ray light sources for element-resolved microanalysis and national security. The need in these applications for simplicity, reliability, and low cost has emphasized solutions compatible with the use of the long established and commercially available pulsed microwave rf sources and L-, S- or X-band linear accelerators. Thermionic microwave electron guns have proven to be one successful approach to the development of the electron sources for these systems providing high macropulse average current beams with picosecond pulse lengths and good emittance out to macropulse lengths of 4-5 microseconds. But longer macropulse lengths are now needed for use in inverse-Compton x-ray sources and other emerging applications. We describe in this paper our approach to extending the usable macropulse current and pulse length of these guns through the use of thermal diffusion to compensate for the increase in cathode surface temperature due to back-bombardment.

Recent advances of conductive nanocomposites in printed and flexible electronics

NASA Astrophysics Data System (ADS)

Khan, Saleem; Lorenzelli, Leandro

2017-08-01

Conductive nanocomposites have emerged as significant smart engineered materials for realizing flexible electronics on diverse substrates in recent years. Conductive nanocomposites are comprised of conductive fillers mixed with polymeric elastomer (e.g. polydimethylsiloxane). The possibility to tune electrical as well as mechanical properties of nanocomposites makes them suitable for a wide spectrum of applications including sensors and electronics on non-planar and stretchable surfaces. A number of conductive nanofillers and manufacturing technologies have been developed to meet the diverse requirements of various applications. Considering the substantial contribution of conductive nanocomposites, it is opportune time to review the potentials of various nanofillers, their synthesis, processing methodologies and challenges associated to them. This paper reviews conductive nanocomposites, especially in context with their use in the development of electronic components and the sensors exploiting the piezoresistive behavior. The paper is structured around the nanocomposites related studies aiming to develop various building blocks of flexible electronic skin systems such as pressure, touch, strain and temperature sensors as well as stretchable interconnects. Besides this, the use of nanocomposites in other stimulating industrial and biomedical applications has also been explored briefly.

Headset Bluetooth and cell phone based continuous central body temperature measurement system.

PubMed

Sanches, J Miguel; Pereira, Bruno; Paiva, Teresa

2010-01-01

The accurate measure of the central temperature is a very important physiologic indicator in several clinical applications, namely, in the characterization and diagnosis of sleep disorders. In this paper a simple system is described to continuously measure the body temperature at the ear. An electronic temperature sensor is coupled to the microphone of a common commercial auricular Bluetooth device that sends the temperature measurements to a mobile phone to which is paired. The measurements are stored at the mobile phone and periodically sent to a medical facility by email or SMS (short messaging service).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Lu

The objective of this research is to investigate the high-field magnetic properties of high temperature superconductors, materials that conduct electricity without loss. A technique known as high-resolution torque magnetometry that was developed to directly measure the magnetization of high temperature superconductors. This technique was implemented using the 65 Tesla pulsed magnetic field facility that is part of the National High Magnetic Field Laboratory at Los Alamos National Laboratory. This research addressed unanswered questions about the interplay between magnetism and superconductivity, determine the electronic structure of high temperature superconductors, and shed light on the mechanism of high temperature superconductivity and onmore » potential applications of these materials in areas such as energy generation and power transmission. Further applications of the technology resolve the novel physical phenomena such as correlated topological insulators, and spin liquid state in quantum magnets.« less

Surface 3D nanostructuring by tightly focused laser pulse: simulations by Lagrangian code and molecular dynamics

NASA Astrophysics Data System (ADS)

Inogamov, Nail A.; Zhakhovsky, Vasily V.

2016-02-01

There are many important applications in which the ultrashort diffraction-limited and therefore tightly focused laser pulses irradiates metal films mounted on dielectric substrate. Here we present the detailed picture of laser peeling and 3D structure formation of the thin (relative to a depth of a heat affected zone in the bulk targets) gold films on glass substrate. The underlying physics of such diffraction-limited laser peeling was not well understood previously. Our approach is based on a physical model which takes into consideration the new calculations of the two-temperature (2T) equation of state (2T EoS) and the two-temperature transport coefficients together with the coupling parameter between electron and ion subsystems. The usage of the 2T EoS and the kinetic coefficients is required because absorption of an ultrashort pulse with duration of 10-1000 fs excites electron subsystem of metal and transfers substance into the 2T state with hot electrons (typical electron temperatures 1-3 eV) and much colder ions. It is shown that formation of submicrometer-sized 3D structures is a result of the electron-ion energy transfer, melting, and delamination of film from substrate under combined action of electron and ion pressures, capillary deceleration of the delaminated liquid metal or semiconductor, and ultrafast freezing of molten material. We found that the freezing is going in non-equilibrium regime with strongly overcooled liquid phase. In this case the Stefan approximation is non-applicable because the solidification front speed is limited by the diffusion rate of atoms in the molten material. To solve the problem we have developed the 2T Lagrangian code including all this reach physics in. We also used the high-performance combined Monte- Carlo and molecular dynamics code for simulation of surface 3D nanostructuring at later times after completion of electron-ion relaxation.

Predictive methods of some optoelectronic properties for blends based on quaternized polysulfones

NASA Astrophysics Data System (ADS)

Dobos, Adina Maria; Filimon, Anca

2017-11-01

Blends based on quaternized polysulfones were investigated in terms of optical and electronic properties. By applying the Bicerano formalism the refractive index and dielectric constant were evaluated. Also, the dielectric constant of these blends was studied as a function of temperature and frequency. As the result of the main chain structure and charged groups, an increase in theoretical values of the refractive index and dielectric constant with increasing of the ionic quaternized units content in the polymer blend occurs. Additionally, decrease in the dielectric constant with the increase of frequency and decrease of temperature was observed. Refractive index and dielectric constant values indicate that the analyzed samples are transparent and can be used in obtaining of materials with applications involving a small polarizability. Thus, the results are important in prediction of the special optoelectronic features of new polymers blends to obtain high-performance materials with applications in electronic and biomedical fields.

Aerosol jet printed silver nanowire transparent electrode for flexible electronic application

NASA Astrophysics Data System (ADS)

Tu, Li; Yuan, Sijian; Zhang, Huotian; Wang, Pengfei; Cui, Xiaolei; Wang, Jiao; Zhan, Yi-Qiang; Zheng, Li-Rong

2018-05-01

Aerosol jet printing technology enables fine feature deposition of electronic materials onto low-temperature, non-planar substrates without masks. In this work, silver nanowires (AgNWs) are proposed to be printed into transparent flexible electrodes using a Maskless Mesoscale Material Deposition Aerosol Jet® printing system on a glass substrate. The influence of the most significant process parameters, including printing cycles, printing speed, and nozzle size, on the performance of AgNW electrodes was systematically studied. The morphologies of printed patterns were characterized by scanning electron microscopy, and the transmittance was evaluated using an ultraviolet-visible spectrophotometer. Under optimum conditions, high transparent AgNW electrodes with a sheet resistance of 57.68 Ω/sq and a linewidth of 50.9 μm were obtained, which is an important step towards a higher performance goal for flexible electronic applications.

Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Editor)

1992-01-01

The present volume on IR readout electronics discusses cryogenic readout using silicon devices, cryogenic readout using III-V and LTS devices, multiplexers for higher temperatures, and focal-plane signal processing electronics. Attention is given to the optimization of cryogenic CMOS processes for sub-10-K applications, cryogenic measurements of aerojet GaAs n-JFETs, inP-based heterostructure device technology for ultracold readout applications, and a three-terminal semiconductor-superconductor transimpedance amplifier. Topics addressed include unfulfilled needs in IR astronomy focal-plane readout electronics, IR readout integrated circuit technology for tactical missile systems, and radiation-hardened 10-bit A/D for FPA signal processing. Also discussed are the implementation of a noise reduction circuit for spaceflight IR spectrometers, a real-time processor for staring receivers, and a fiber-optic link design for INMOS transputers.

Paper-Based Inkjet-Printed Flexible Electronic Circuits.

PubMed

Wang, Yan; Guo, Hong; Chen, Jin-Ju; Sowade, Enrico; Wang, Yu; Liang, Kun; Marcus, Kyle; Baumann, Reinhard R; Feng, Zhe-Sheng

2016-10-05

Printed flexible electronics have been widely studied for their potential use in various applications. In this paper, a simple, low-cost method of fabricating flexible electronic circuits with high conductivity of 4.0 × 10 7 S·m -1 (about 70% of the conductivity of bulk copper) is demonstrated. Teslin paper substrate is treated with stannous chloride (SnCl 2 ) colloidal solution to reduce the high ink absorption rate, and then the catalyst ink is inkjet-printed on its surface, followed by electroless deposition of copper at low temperature. In spite of the decrease in conductance to some extent, electronic circuits fabricated by this method can maintain function even under various folding angles or after repeated folding. This developed technology has great potential in a variety of applications, such as three-dimensional devices and disposable RFID tags.

European roadmap on superconductive electronics - status and perspectives

NASA Astrophysics Data System (ADS)

Anders, S.; Blamire, M. G.; Buchholz, F.-Im.; Crété, D.-G.; Cristiano, R.; Febvre, P.; Fritzsch, L.; Herr, A.; Il'ichev, E.; Kohlmann, J.; Kunert, J.; Meyer, H.-G.; Niemeyer, J.; Ortlepp, T.; Rogalla, H.; Schurig, T.; Siegel, M.; Stolz, R.; Tarte, E.; ter Brake, H. J. M.; Toepfer, H.; Villegier, J.-C.; Zagoskin, A. M.; Zorin, A. B.

2010-12-01

Executive SummaryFor four decades semiconductor electronics has followed Moore’s law: with each generation of integration the circuit features became smaller, more complex and faster. This development is now reaching a wall so that smaller is no longer any faster. The clock rate has saturated at about 3-5 GHz and the parallel processor approach will soon reach its limit. The prime reason for the limitation the semiconductor electronics experiences is not the switching speed of the individual transistor, but its power dissipation and thus heat. Digital superconductive electronics is a circuit- and device-technology that is inherently faster at much less power dissipation than semiconductor electronics. It makes use of superconductors and Josephson junctions as circuit elements, which can provide extremely fast digital devices in a frequency range - dependent on the material - of hundreds of GHz: for example a flip-flop has been demonstrated that operated at 750 GHz. This digital technique is scalable and follows similar design rules as semiconductor devices. Its very low power dissipation of only 0.1 μW per gate at 100 GHz opens the possibility of three-dimensional integration. Circuits like microprocessors and analogue-to-digital converters for commercial and military applications have been demonstrated. In contrast to semiconductor circuits, the operation of superconducting circuits is based on naturally standardized digital pulses the area of which is exactly the flux quantum Φ0. The flux quantum is also the natural quantization unit for digital-to-analogue and analogue-to-digital converters. The latter application is so precise, that it is being used as voltage standard and that the physical unit ‘Volt’ is defined by means of this standard. Apart from its outstanding features for digital electronics, superconductive electronics provides also the most sensitive sensor for magnetic fields: the Superconducting Quantum Interference Device (SQUID). Amongst many other applications SQUIDs are used as sensors for magnetic heart and brain signals in medical applications, as sensor for geological surveying and food-processing and for non-destructive testing. As amplifiers of electrical signals, SQUIDs can nearly reach the theoretical limit given by Quantum Mechanics. A further important field of application is the detection of very weak signals by ‘transition-edge’ bolometers, superconducting nanowire single-photon detectors, and superconductive tunnel junctions. Their application as radiation detectors in a wide frequency range, from microwaves to X-rays is now standard. The very low losses of superconductors have led to commercial microwave filter designs that are now widely used in the USA in base stations for cellular phones and in military communication applications. The number of demonstrated applications is continuously increasing and there is no area in professional electronics, in which superconductive electronics cannot be applied and surpasses the performance of classical devices. Superconductive electronics has to be cooled to very low temperatures. Whereas this was a bottleneck in the past, cooling techniques have made a huge step forward in recent years: very compact systems with high reliability and a wide range of cooling power are available commercially, from microcoolers of match-box size with milli-Watt cooling power to high-reliability coolers of many Watts of cooling power for satellite applications. Superconductive electronics will not replace semiconductor electronics and similar room-temperature techniques in standard applications, but for those applications which require very high speed, low-power consumption, extreme sensitivity or extremely high precision, superconductive electronics is superior to all other available techniques. To strengthen the European competitiveness in superconductor electronics research projects have to be set-up in the following field: Ultra-sensitive sensing and imaging. Quantum measurement instrumentation. Advanced analogue-to-digital converters. Superconductive electronics technology.

Porous aluminum room temperature anodizing process in a fluorinated-oxalic acid solution

NASA Astrophysics Data System (ADS)

Dhahri, S.; Fazio, E.; Barreca, F.; Neri, F.; Ezzaouia, H.

2016-08-01

Anodizing of aluminum is used for producing porous insulating films suitable for different applications in electronics and microelectronics. Porous-type aluminum films are most simply realized by galvanostatic anodizing in aqueous acidic solutions. The improvement in application of anodizing technique is associated with a substantial reduction of the anodizing voltage at appropriate current densities as well as to the possibility to carry out the synthesis process at room temperature in order to obtain a self-planarizing dielectric material incorporated in array of super-narrow metal lines. In this work, the anodizing of aluminum to obtain porous oxide was carried out, at room temperature, on three different substrates (glass, stainless steel and aluminum), using an oxalic acid-based electrolyte with the addition of a relatively low amount of 0.4 % of HF. Different surface morphologies, from nearly spherical to larger porous nanostructures with smooth edges, were observed by means of scanning electron microscopy. These evidences are explained by considering the formation, transport and adsorption of the fluorine species which react with the Al3+ ions. The behavior is also influenced by the nature of the original substrate.

Foundations of low-temperature plasma physics—an introduction

NASA Astrophysics Data System (ADS)

von Keudell, A.; Schulz-von der Gathen, V.

2017-11-01

The use of plasmas as a reactive mixture of ions, electrons and neutrals is at the core of numerous technologies in industry, enabling applications in microelectronics, automotives, packaging, environment and medicine. Recently, even the use of plasmas in medical applications has made great progress. The dominant character of a plasma is often its non equilibrium nature with different temperatures for the individual species in a plasma, the ions, electrons and neutrals. This opens up a multitude of reaction pathways which are inaccessible to conventional methods in chemistry, for example. The understanding of plasmas requires expertise in plasma physics, plasma chemistry and in electrical engineering. This first paper in a series of foundation papers on low temperature plasma science is intended to provide the very basics of plasmas as a common starting point for the more in-depth discussion of particular plasma generation methods, plasma modeling and diagnostics in the other foundation papers. In this first paper of the series, the common terminology, definitions and main concepts are introduced. The covered aspects start with the basic definitions and include further plasma equilibria, particle collisions and transport, sheaths and discharge breakdowns.

Calcination temperature effect on the microstructure and dielectric properties of M-type strontium hexagonal ferrites

NASA Astrophysics Data System (ADS)

Mohammed, J.; Sharma, Jyoti; Kumar, Sachin; Trudel, T. T. Carol; Srivastava, A. K.

2017-07-01

M-type hexagonal ferrites have found wide application in electronics industry due to the possibility of tuning properties such as dielectric properties. An improved dielectric property is useful in high frequency application. In this paper, we studied the effect of calcination temperature on structural and dielectric properties of Al-Mn substituted M-type strontium hexagonal ferrites with chemical composition Sr1-xAlxFe12-yMnyO19 (x=0.3 and y=0.6) synthesized by sol-gel auto-combustion method. The prepared sample was sintered at four different temperatures (T=750°C, 850°C, 950°C and 1050°C) for 5 hours. Characterisations of the synthesized samples were carried out using X-ray diffraction (XRD), impedance analyser, field emission electron microscope (FE-SEM) and energy dispersive X-ray (EDX) spectroscopy. The dielectric properties were explained on the basis of Koop's phenomenological theory and Maxwell Wagner theory. The sample calcinated at 750°C shows the highest value of dielectric constant and AC conductivity whereas that calcinated at 1050°C exhibit the lowest dielectric losses.

Impurities, temperature, and density in a miniature electrostatic plasma and current source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Den Hartog, D.J.; Craig, D.J.; Fiksel, G.

1996-10-01

We have spectroscopically investigated the Sterling Scientific miniature electrostatic plasma source-a plasma gun. This gun is a clean source of high density (10{sup 19} - 10{sup 20} m{sup -3}), low temperature (5 - 15 eV) plasma. A key result of our investigation is that molybdenum from the gun electrodes is largely trapped in the internal gun discharge; only a small amount escapes in the plasma flowing out of the gun. In addition, the gun plasma parameters actually improve (even lower impurity contamination and higher ion temperature) when up to 1 kA of electron current is extracted from the gun viamore » the application of an external bias. This improvement occurs because the internal gun anode no longer acts as the current return for the internal gun discharge. The gun plasma is a virtual plasma electrode capable of sourcing an electron emission current density of 1 kA/cm{sup 2}. The high emission current, small size (3 - 4 cm diameter), and low impurity generation make this gun attractive for a variety of fusion and plasma technology applications.« less

Hot-compress: A new postdeposition treatment for ZnO-based flexible dye-sensitized solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haque Choudhury, Mohammad Shamimul, E-mail: shamimul129@gmail.com; Department of Electrical and Electronic Engineering, International Islamic University Chittagong, b154/a, College Road, Chittagong 4203; Kishi, Naoki

2016-08-15

Highlights: • A new postdeposition treatment named hot-compress is introduced. • Hot-compression gives homogeneous compact layer ZnO photoanode. • I-V and EIS analysis data confirms the efficacy of this method. • Charge transport resistance was reduced by the application of hot-compression. - Abstract: This article introduces a new postdeposition treatment named hot-compress for flexible zinc oxide–base dye-sensitized solar cells. This postdeposition treatment includes the application of compression pressure at an elevated temperature. The optimum compression pressure of 130 Ma at an optimum compression temperature of 70 °C heating gives better photovoltaic performance compared to the conventional cells. The aptness ofmore » this method was confirmed by investigating scanning electron microscopy image, X-ray diffraction, current-voltage and electrochemical impedance spectroscopy analysis of the prepared cells. Proper heating during compression lowers the charge transport resistance, longer the electron lifetime of the device. As a result, the overall power conversion efficiency of the device was improved about 45% compared to the conventional room temperature compressed cell.« less

Screen printed passive components for flexible power electronics

NASA Astrophysics Data System (ADS)

Ostfeld, Aminy E.; Deckman, Igal; Gaikwad, Abhinav M.; Lochner, Claire M.; Arias, Ana C.

2015-10-01

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components—inductors, capacitors, and resistors—perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application.

Screen printed passive components for flexible power electronics

PubMed Central

Ostfeld, Aminy E.; Deckman, Igal; Gaikwad, Abhinav M.; Lochner, Claire M.; Arias, Ana C.

2015-01-01

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components—inductors, capacitors, and resistors—perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application. PMID:26514331

Screen printed passive components for flexible power electronics.

PubMed

Ostfeld, Aminy E; Deckman, Igal; Gaikwad, Abhinav M; Lochner, Claire M; Arias, Ana C

2015-10-30

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components-inductors, capacitors, and resistors-perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application.

Proceedings of the AFOSR Special Conference on Prime-Power for High Energy Space Systems, Norfolk, Virginia, 22-25 February 1982. Volume 2

DTIC Science & Technology

1982-02-25

However, because the mobility of the ions is much smaller than the mobility of the electrons (for cesium i = 1/500 Me), and because of ion...space applications of this high temperature in- sulation. Use of glass-alumina insulation for motors in mobile applications would reduce cooling...present and/or mobile only during irradiation. VII-7-7 WS 710 01AS$ AesowRpIOr MEA8IJRtED MOt AN FTER L5 MvV ELECTRON NtADIATION Fig. 7 -- Growth of

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sang-Eui; Moon, Kyoung-Seok; Sohn, Yoonchul, E-mail: yoonchul.son@samsung.com

Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Agmore » interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.« less

Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures.

PubMed

Gamucci, A; Spirito, D; Carrega, M; Karmakar, B; Lombardo, A; Bruna, M; Pfeiffer, L N; West, K W; Ferrari, A C; Polini, M; Pellegrini, V

2014-12-19

Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies. Here we report a new class of heterostructures comprising a single-layer (or bilayer) graphene in close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional electron gas. In our devices, graphene is naturally hole-doped, thereby allowing for the investigation of electron-hole interactions. We focus on the Coulomb drag transport measurements, which are sensitive to many-body effects, and find that the Coulomb drag resistivity significantly increases for temperatures <5-10 K. The low-temperature data follow a logarithmic law, therefore displaying a notable departure from the ordinary quadratic temperature dependence expected in a weakly correlated Fermi-liquid. This anomalous behaviour is consistent with the onset of strong interlayer correlations. Our heterostructures represent a new platform for the creation of coherent circuits and topologically protected quantum bits.

Observing electron spin resonance between 0.1 and 67 GHz at temperatures between 50 mK and 300 K using broadband metallic coplanar waveguides

NASA Astrophysics Data System (ADS)

Wiemann, Yvonne; Simmendinger, Julian; Clauss, Conrad; Bogani, Lapo; Bothner, Daniel; Koelle, Dieter; Kleiner, Reinhold; Dressel, Martin; Scheffler, Marc

2015-05-01

We describe a fully broadband approach for electron spin resonance (ESR) experiments, where it is possible to tune not only the magnetic field but also the frequency continuously over wide ranges. Here, a metallic coplanar transmission line acts as compact and versatile microwave probe that can easily be implemented in different cryogenic setups. We perform ESR measurements at frequencies between 0.1 and 67 GHz and at temperatures between 50 mK and room temperature. Three different types of samples (Cr3+ ions in ruby, organic radicals of the nitronyl-nitroxide family, and the doped semiconductor Si:P) represent different possible fields of application for the technique. We demonstrate that an extremely large phase space in temperature, magnetic field, and frequency for ESR measurements, substantially exceeding the range of conventional ESR setups, is accessible with metallic coplanar lines.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, A.M.

1995-03-21

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

Microsystems, Space Qualified Electronics and Mobile Sensor Platforms for Harsh Environment Applications and Planetary Exploration

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Okojie, Robert S.; Krasowski, Michael J.; Beheim, Glenn M.; Fralick, Gustave C.; Wrbanek, John D.; Greenberg, Paul S.; Xu, Jennifer

2007-01-01

NASA Glenn Research Center is presently developing and applying a range of sensor and electronic technologies that can enable future planetary missions. These include space qualified instruments and electronics, high temperature sensors for Venus missions, mobile sensor platforms, and Microsystems for detection of a range of chemical species and particulates. A discussion of each technology area and its level of maturity is given. It is concluded that there is a strong need for low power devices which can be mobile and provide substantial characterization of the planetary environment where and when needed. While a given mission will require tailoring of the technology for the application, basic tools which can enable new planetary missions are being developed.

Geckoprinting: assembly of microelectronic devices on unconventional surfaces by transfer printing with isolated gecko setal arrays

PubMed Central

Jeong, Jaeyoung; Kim, Juho; Song, Kwangsun; Autumn, Kellar; Lee, Jongho

2014-01-01

Developing electronics in unconventional forms provides opportunities to expand the use of electronics in diverse applications including bio-integrated or implanted electronics. One of the key challenges lies in integrating semiconductor microdevices onto unconventional substrates without glue, high pressure or temperature that may cause damage to microdevices, substrates or interfaces. This paper describes a solution based on natural gecko setal arrays that switch adhesion mechanically on and off, enabling pick and place manipulation of thin microscale semiconductor materials onto diverse surfaces including plants and insects whose surfaces are usually rough and irregular. A demonstration of functional ‘geckoprinted’ microelectronic devices provides a proof of concept of our results in practical applications. PMID:25056216

Electronic and transport properties of fluorite structure of La2Ce2O7

NASA Astrophysics Data System (ADS)

Mahida, H. R.; Singh, Deobrat; Gupta, Sanjeev K.; Sonvane, Yogesh; Thakor, P. B.

2017-05-01

In this paper, we have symmetrically investigated the structural, electronic and transport properties of fluorite structure of lanthanum cerate oxide (La2Ce2O7) using density functional theory (DFT). The electronic band structure of La2Ce2O7 show semiconducting in nature with band gap of 1.54 eV (indirect at R-X points) and 1.71 eV (direct at R points). We have also calculated the susceptibility, hall resistance, electrical, and thermal conductivity by using Boltztrap equation. The electrical conductivity decreases where as thermal conductivity increases with increase in the temperature. Our result shows that La2Ce2O7 has application in Proton exchange membrane (PEM) fuel cells applications.

XPS studies of Mg doped GDC (Ce0.8Gd0.2O2-δ) for IT-SOFC

NASA Astrophysics Data System (ADS)

Tyagi, Deepak; Rao, P. Koteswara; Wani, B. N.

2018-04-01

Fuel Cells have gained much attention as efficient and environment friendly device for both stationary as well as mobile applications. For intermediate temperature SOFC (IT-SOFC), ceria based electrolytes are the most promising one, due to their higher ionic conductivity at relatively lower temperatures. Gd doped ceria is reported to be having the highest ionic conductivity. In the present work, Mg is codoped along with Gd and the electronic structure of the constituents is studied by XPS. XPS confirm that the Cerium is present in +4 oxidation state only which indicates that electronic conduction can be completely avoided.

Study the Effect of Substrate Temperature on Structural and Electrical Properties of Electron Beam Evaporated In{sub 1−x}Sb{sub x} Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahul, E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com; Vishwakarma, S. R., E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com; Verma, Aneet Kumar, E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com

2011-10-20

Indium Antimonide (InSb) is a promising materials for mid and long wavelength infrared and high speed devices applications because of its small band gap. The Indium Antimonide (InSb) thin films have been deposited onto well cleaned glass substrate at different substrate temperatures (300 K, 323 K, 373 K) by electron beam evaporation technique in the high vacuum chamber at vacuum pressure ∼10{sup −5} torr using prepared non‐stoichiometric InSb powder using formula In{sub 1−x}Sb{sub x}(0.2

In-Flight Thermal Performance of the Geoscience Laser Altimeter System (GLAS) Instrument

NASA Technical Reports Server (NTRS)

Grob, Eric; Baker, Charles; McCarthy, Tom

2003-01-01

The Geoscience Laser Altimeter System (GLAS) instrument is NASA Goddard Space Flight Center's first application of Loop Heat Pipe technology that provides selectable/stable temperature levels for the lasers and other electronics over a widely varying mission environment. GLAS was successfully launched as the sole science instrument aboard the Ice, Clouds, and Land Elevation Satellite (ICESat) from Vandenberg AFB at 4:45pm PST on January 12, 2003. After SC commissioning, the LHPs started easily and have provided selectable and stable temperatures for the lasers and other electronics. This paper discusses the thermal development background and testing, along with details of early flight thermal performance data.

Anisotropic electron temperature measurements without knowing the spectral transmissivity for a JT-60SA Thomson scattering diagnostic.

PubMed

Tojo, H; Hatae, T; Yatsuka, E; Itami, K

2012-10-01

This paper focuses on a method for measuring the electron temperature (T(e)) without knowing the transmissivity using Thomson scattering diagnostic with a double-pass scattering system. Application of this method for measuring the anisotropic T(e), i.e., the T(e) in the directions parallel (T(eparallel)) and perpendicular (T(eperpendicular)) to the magnetic field, is proposed. Simulations based on the designed parameters for a JT-60SA indicate the feasibility of the measurements except in certain T(e) ranges, e.g., T(eparallel) ~ 3.5T(eperpendicular) at 120° of the scattering angle.

Electron precipitation control of the Mars nightside ionosphere

NASA Astrophysics Data System (ADS)

Lillis, R. J.; Girazian, Z.; Mitchell, D. L.; Adams, D.; Xu, S.; Benna, M.; Elrod, M. K.; Larson, D. E.; McFadden, J. P.; Andersson, L.; Fowler, C. M.

2017-12-01

The nightside ionosphere of Mars is known to be highly variable, with densities varying substantially with ion species, solar zenith angle, solar wind conditions and geographic location. The factors that control its structure include neutral densities, day-night plasma transport, plasma temperatures, dynamo current systems driven by neutral winds, solar energetic particle events, superthermal electron precipitation, chemical reaction rates and the strength, geometry and topology of crustal magnetic fields. The MAVEN mission has been the first to systematically sample the nightside ionosphere by species, showing that shorter-lived species such as CO2+ and O+ are more correlated with electron precipitation flux than longer lived species such as O2+ and NO+, as would be expected, and is shown in the figure below from Girazian et al. [2017, under review at Geophysical Research Letters]. In this study we use electron pitch-angle and energy spectra from the Solar Wind Electron Analyzer (SWEA) and Solar Energetic Particle (SEP) instruments, ion and neutral densities from the Neutral Gas and Ion Mass Spectrometer (NGIMS), electron densities and temperatures from the Langmuir Probe and Waves (LPW) instrument, as well as electron-neutral ionization cross-sections. We present a comprehensive statistical study of electron precipitation on the Martian nightside and its effect on the vertical, local-time and geographic structure and composition of the ionosphere, over three years of MAVEN observations. We also calculate insitu electron impact ionization rates and compare with ion densities to judge the applicability of photochemical models of the formation and maintenance of the nightside ionosphere. Lastly, we show how this applicability varies with altitude and is affected by ion transport measured by the Suprathermal and thermal Ion Composition (STATIC) instrument.

Measurement of atmospheric pressure microplasma jet with Langmuir probes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Kunning G., E-mail: gabe.xu@uah.edu; Doyle, Steven J.

2016-09-15

A radio frequency argon microplasma jet at atmospheric-pressure is characterized using Langmuir probes. While optical methods are the typical diagnostic for these small scale plasmas, the simplicity and low cost of Langmuir probes makes them an attractive option. The plasma density and electron temperature are measured using existing high-pressure Langmuir probe theories developed for flames and arcs. The density and temperature vary from 1 × 10{sup 16} to 1 × 10{sup 19} m{sup −3} and 2.3 to 4.4 eV, respectively, depending on the operating condition. The density decreases while the electron temperature increases with axial distance from the jet exit. Themore » applicability of the probe theories as well as the effect of collisionality and jet mixing is discussed.« less

Promising thermoelectric properties of phosphorenes.

PubMed

Sevik, Cem; Sevinçli, Hâldun

2016-09-02

Electronic, phononic, and thermoelectric transport properties of single layer black- and blue-phosphorene structures are investigated with first-principles based ballistic electron and phonon transport calculations employing hybrid functionals. The maximum values of room temperature thermoelectric figure of merit, ZT corresponding to armchair and zigzag directions of black-phosphorene, ∼0.5 and ∼0.25, are calculated as rather smaller than those obtained with first-principles based semiclassical Boltzmann transport theory calculations. On the other hand, the maximum value of room temperature ZT of blue-phosphorene is predicted to be substantially high and remarkable values as high as 2.5 are obtained for elevated temperatures. Besides the fact that these figures are obtained at the ballistic limit, our findings mark the strong possibility of high thermoelectric performance of blue-phosphorene in new generation thermoelectric applications.

Electron-Beam Irradiation Effect on Thermal and Mechanical Properties of Nylon-6 Nanocomposite Fibers Infused with Diamond and Diamond Coated Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Imam, Muhammad A.; Jeelani, Shaik; Rangari, Vijaya K.; Gome, Michelle G.; Moura, Esperidiana. A. B.

2016-02-01

Nylon-6 is an engineering plastic with excellent properties and processability, which are essential in several industrial applications. The addition of filler such as diamond (DN) and diamond coated carbon nanotubes (CNTs) to form molded composites may increase the range of Nylon-6 applications due to the resulting increase in strength. The effects of electron-beam irradiation on these thermoplastic nanocomposites are either increase in the cross-linking or causes chain scission. In this study, DN-coated CNTs were synthesized using the sonochemical technique in the presence of cationic surfactant cetyltrimethyl ammonium bromide (CTAB). The DN-coated CNTs nanoparticles and diamond nanoparticles were then introduced into Nylon-6 polymer through a melt extrusion process to form nanocomposite fibers. They were further tested for their mechanical (Tensile) and thermal properties (thermogravimetric analysis (TGA), differential scanning calorimetry (DSC)). These composites were further exposed to the electron-beam (160kGy, 132kGy and 99kGy) irradiation using a 1.5MeV electron-beam accelerator, at room temperature, in the presence of air and tested for their thermal and mechanical properties. The best ultimate tensile strength was found to be 690MPa and 864MPa irradiated at 132 for DN/CNTs/Nylon-6 and Diamond/Nylon-6 nanocomposite fiber as compared to 346MPa and 321MPa for DN/CNTs/Nylon-6 and Diamond/Nylon-6 nanocomposite fiber without irradiation. The neat Nylon-6 tensile strength was 240MPa. These results are consistent with the activation energy calculated from TGA graphs. DSC analysis result shows that the slight increase in glass transition temperature (Tg) and decrease in melting temperature (Tm) which was expected from high electron-beam radiation dose.

Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1

PubMed Central

Prakash, Abhinav; Xu, Peng; Faghaninia, Alireza; Shukla, Sudhanshu; Ager, Joel W.; Lo, Cynthia S.; Jalan, Bharat

2017-01-01

Wide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of significant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 104 S cm−1. Significantly, these films show room temperature mobilities up to 120 cm2 V−1 s−1 even at carrier concentrations above 3 × 1020 cm−3 together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III–N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality. PMID:28474675

High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

NASA Astrophysics Data System (ADS)

Jiang, C.; Rumyantsev, S. L.; Samnakay, R.; Shur, M. S.; Balandin, A. A.

2015-02-01

We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a "memory step," was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.

Wide bandgap BaSnO 3 films with room temperature conductivity exceeding 10 4 S cm -1

DOE PAGES

Prakash, Abhinav; Xu, Peng; Faghaninia, Alireza; ...

2017-05-05

Wide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of sign ificant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO 3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 10 4 S cm -1 . Significantly, these films show room temperature mobilities up to 120 cm 2 V -1 s -1 even at carrier concentrations abovemore » 3 × 10 20 cm -3 together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III-N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality.« less

EMPFASIS: A Publication of the National Electronics Manufacturing Center of Excellence

DTIC Science & Technology

2010-01-01

for moisture, salt spray, and wind driven rain protection. • Conversion to ruggedized electrical and fluid connectors. • Additional circuitry, if...computer control technology, designed for safe lead free and eutectic rework applications. Available in two models, the RD-500 series features a three-stage...shock, Temperature Humidity Bias (THB) Testing, Highly Accelerated Stress Testing (HAST), salt fog, high temperature storage, or other environmental

Study of structural, electronic and magneto transport properties of La0.7Ca0.2-xSrxAg0.1MnO3

NASA Astrophysics Data System (ADS)

Subhashini, P.; Munirathinum, B.; Krishnaiah, M.; Venkatesh, R.; Venkateswarlu, D.; Ganesan, V.

2016-10-01

Structural, electrical and magneto transport properties of Lanthanum based manganites La0.7Ca0.2-xSrxAg0.1MnO3 (x=0 & 0.1) synthesized by low temperature nitrate route is studied systematically. The X-ray Diffraction patterns confirm the presence of orthorhombic structure with Pnma space group. The temperature dependence of MR (-35%) from 233-272K for x=0 and an MR (-26%) from 281-309K for x=0.1composition with an overall variation of 1% is very much advantageous for device application. Interestingly, in low temperature regime, the MR value of -47% obtained in x=0.1 composition at 10T around 5K is 20% higher than the MR obtained at 10T around the metal insulator transition. Significant changes happening in the low temperature MR measurements is discussed in the light of electron-electron interactions and weak localization mechanisms while the additional broad hump responsible for flat MR is attributed to the intrinsic electronic in homogeneity driven phase competition created due to the presence of mono valent Ag ions. The complex localization mechanism associated with insulating regime is in accordance with Variable range hopping of small polarons.

Thermal Stability of Nanocrystalline Copper for Potential Use in Printed Wiring Board Applications

NASA Astrophysics Data System (ADS)

Woo, Patrick Kai Fai

Copper is a widely used conductor in the manufacture of printed wiring boards (PWB). The trends in miniaturization of electronic devices create increasing challenges to all electronic industries. In particular PWB manufacturers face great challenges because the increasing demands in greater performance and device miniaturization pose enormous difficulties in manufacturing and product reliability. Nanocrystalline and ultra-fine grain copper can potentially offer increased reliability and functionality of the PWB due to the increases in strength and achievable wiring density by reduction in grain size. The first part of this thesis is concerned with the synthesis and characterization of nanocrystalline and ultra-fine grain-sized copper for potential applications in the PWB industry. Nanocrystalline copper with different amounts of sulfur impurities (25-230ppm) and grain sizes (31-49nm) were produced and their hardness, electrical resistivity and etchability were determined. To study the thermal stability of nanocrystalline copper, differential scanning calorimetry and isothermal heat treatments combined with electron microscopy techniques for microstructural analysis were used. Differential scanning calorimetry was chosen to continuously monitor the grain growth process in the temperature range from 40?C to 400?C. During isothermal annealing experiments samples were annealed at 23?C, 100?C and 300?C to study various potential thermal issues for these materials in PWB applications such as the long-term room temperature thermal stability as well as for temperature excursions above the operation temperature and peak temperature exposure during the PWB manufacturing process. From all annealing experiments the various grain growth events and the overall stability of these materials were analyzed in terms of driving and dragging forces. Experimental evidence is presented which shows that the overall thermal stability, grain boundary character and texture evolution of copper is greatly related to changes in driving and dragging forces, which in turn, are strongly depended on parameters such as annealing temperature and time, total sulfur impurity content and the distribution of the impurities within the material. It was shown that a simple increase in the sulfur impurity level does not necessarily improve the thermal stability of nanocrystalline copper.

Path Integral Monte Carlo Simulations of Warm Dense Matter and Plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Militzer, Burkhard

2018-01-13

New path integral Monte Carlo simulation (PIMC) techniques will be developed and applied to derive the equation of state (EOS) for the regime of warm dense matter and dense plasmas where existing first-principles methods cannot be applied. While standard density functional theory has been used to accurately predict the structure of many solids and liquids up to temperatures on the order of 10,000 K, this method is not applicable at much higher temperature where electronic excitations become important because the number of partially occupied electronic orbitals reaches intractably large numbers and, more importantly, the use of zero-temperature exchange-correlation functionals introducesmore » an uncontrolled approximation. Here we focus on PIMC methods that become more and more efficient with increasing temperatures and still include all electronic correlation effects. In this approach, electronic excitations increase the efficiency rather than reduce it. While it has commonly been assumed such methods can only be applied to elements without core electrons like hydrogen and helium, we recently showed how to extend PIMC to heavier elements by performing the first PIMC simulations of carbon and water plasmas [Driver, Militzer, Phys. Rev. Lett. 108 (2012) 115502]. Here we propose to continue this important development to extend the reach of PIMC simulations to yet heavier elements and also lower temperatures. The goal is to provide a robust first-principles simulation method that can accurately and efficiently study materials with excited electrons at solid-state densities in order to access parts of the phase diagram such the regime of warm dense matter and plasmas where so far only more approximate, semi-analytical methods could be applied.« less

A study of helium atmospheric-pressure guided streamers for potential biological applications

NASA Astrophysics Data System (ADS)

Gazeli, K.; Noël, C.; Clément, F.; Daugé, C.; Svarnas, P.; Belmonte, T.

2013-04-01

The origin of differences in the rotational temperatures of various molecules and ions ( N_{2}^{+} (B), OH(A) and N2(C)) is studied in helium atmospheric-pressure guided streamers. The rotational temperature of N_{2}^{+} (B) is room temperature. It is estimated from the emission band of the first negative system at 391.4 nm, and it is governed by the temperature of N2(X) in the surrounding air. N2(X) is ionized by direct electron impact in the outer part of the plasma. N_{2}^{+} (B) is deactivated by collisions with N2 and O2. The rotational temperature of OH(A), estimated from the OH band at 306.4 nm, is slightly higher than that of N_{2}^{+} (B). OH(A) is excited by electron impact with H2O during the first 100 ns of the applied voltage pulse. Next, OH(A) is produced by electron impact with OH(X) created by the quenching of OH(A) by N2 and O2. H2O diffuses deeper than N2 into the plasma ring and the rotational temperature of OH(A) is slightly higher than that of N_{2}^{+} (B). The rotational temperature of N2(C), estimated from the emission of the second positive system at 315.9 nm, is governed by its collisions with helium. The gas temperature of helium at the beginning of the pulse is predicted to be several hundred kelvin higher than room temperature.

The Role of Phase Changes in TiO2/Pt/TiO2 Filaments

NASA Astrophysics Data System (ADS)

Bíró, Ferenc; Hajnal, Zoltán; Dücső, Csaba; Bársony, István

2018-04-01

This work analyses the role of phase changes in TiO2/Pt/TiO2 layer stacks for micro-heater application regarding their stability and reliable operation. The polycrystalline Pt layer wrapped in a TiO2 adhesion layer underwent a continuous recrystallisation in a self-heating operation causing a drift in the resistance ( R) versus temperature ( T) performance. Simultaneously, the TiO2 adhesion layer also deteriorates at high temperature by phase changes from amorphous to anatase and rutile crystallite formation, which not only influences the Pt diffusion in different migration phenomena, but also reduces the cross section of the Pt heater wire. Thorough scanning electron microscopy, energy dispersive spectroscopy, cross-sectional transmission electron microscopy (XTEM) and electron beam diffraction analysis of the structures operated at increasing temperature revealed the elemental structural processes leading to the instabilities and the accelerated degradation, resulting in rapid breakdown of the heater wire. Owing to stability and reliability criteria, the conditions for safe operation of these layer structures could be determined.

Mapping Thermal Expansion Coefficients in Freestanding 2D Materials at the Nanometer Scale

NASA Astrophysics Data System (ADS)

Hu, Xuan; Yasaei, Poya; Jokisaari, Jacob; Öǧüt, Serdar; Salehi-Khojin, Amin; Klie, Robert F.

2018-02-01

Two-dimensional materials, including graphene, transition metal dichalcogenides and their heterostructures, exhibit great potential for a variety of applications, such as transistors, spintronics, and photovoltaics. While the miniaturization offers remarkable improvements in electrical performance, heat dissipation and thermal mismatch can be a problem in designing electronic devices based on two-dimensional materials. Quantifying the thermal expansion coefficient of 2D materials requires temperature measurements at nanometer scale. Here, we introduce a novel nanometer-scale thermometry approach to measure temperature and quantify the thermal expansion coefficients in 2D materials based on scanning transmission electron microscopy combined with electron energy-loss spectroscopy to determine the energy shift of the plasmon resonance peak of 2D materials as a function of sample temperature. By combining these measurements with first-principles modeling, the thermal expansion coefficients (TECs) of single-layer and freestanding graphene and bulk, as well as monolayer MoS2 , MoSe2 , WS2 , or WSe2 , are directly determined and mapped.

Mapping Thermal Expansion Coefficients in Freestanding 2D Materials at the Nanometer Scale.

PubMed

Hu, Xuan; Yasaei, Poya; Jokisaari, Jacob; Öğüt, Serdar; Salehi-Khojin, Amin; Klie, Robert F

2018-02-02

Two-dimensional materials, including graphene, transition metal dichalcogenides and their heterostructures, exhibit great potential for a variety of applications, such as transistors, spintronics, and photovoltaics. While the miniaturization offers remarkable improvements in electrical performance, heat dissipation and thermal mismatch can be a problem in designing electronic devices based on two-dimensional materials. Quantifying the thermal expansion coefficient of 2D materials requires temperature measurements at nanometer scale. Here, we introduce a novel nanometer-scale thermometry approach to measure temperature and quantify the thermal expansion coefficients in 2D materials based on scanning transmission electron microscopy combined with electron energy-loss spectroscopy to determine the energy shift of the plasmon resonance peak of 2D materials as a function of sample temperature. By combining these measurements with first-principles modeling, the thermal expansion coefficients (TECs) of single-layer and freestanding graphene and bulk, as well as monolayer MoS_{2}, MoSe_{2}, WS_{2}, or WSe_{2}, are directly determined and mapped.

Laboratory Measurements of the Dielectronic Recombination Satellite Transitions of He-Like FE XXV and H-Like FE XXVI

NASA Technical Reports Server (NTRS)

Gu, M. F.; Beiersdorfer, P.; Brown, G. V.; Graf, A.; Kelley, R. I.; Kilbourne, C. A.; Porter, F. S.; Kahn, S. M,

2012-01-01

We present laboratory spectra of dielectronic recombination (DR) satellite transitions attached to the He-like and H-like iron resonance lines obtained with the NASA Goddard Space Flight Center X-ray calorimeter and produced by a thermal plasma simu1ation technique on the EBIT-I electron beam ion trap at the Lawrence Livermore National Laboratory. We demonstrate that the calorimeter has sufficient spectral resolution in the 6-9 keV range to provide reliable measurements not only of standard DR satellite to resonance line intensities but also of DR satellite to DR satellite ratios that can be used to diagnose nonthermal electron distributions. Electron temperatures derived from the measured line intensities are consistent with the temperature of the simulated plasma. Temperature measurements based on DR satellite transitions have significant advantages over those based on collisional ionization equilibrium or continuum shape. Thus, successful demonstration of this method with the X-ray calorimeter is an important step fur its application in X-ray astronomy.

Evaluation of 10V Chip Polymer Tantalum Capacitors for Space Applications

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2016-01-01

Due to low ESR and safe failure mode, new technology chip polymer tantalum capacitors (CPTC) have gained popularity in the electronics design community, first in commercial applications, and now in hi-rel and space systems. The major drawbacks of these parts are high leakage currents, degradation under environmental stresses, and a relatively narrow temperature range of operating and storage conditions. Several studies have shown that a certain amount of moisture in polymer cathodes is necessary for a normal operation of the parts. This might limit applications of CPTCs in space systems and requires analysis of long-term exposure to deep vacuum conditions on their performance and reliability. High leakage currents and limited maximum operational temperature complicate accelerated testing that is necessary to assess long-term reliability and require new screening and qualification procedures for quality assurance. A better understanding of behavior of CPTCs as compared to traditional, MnO2, capacitors is necessary to develop adequate approaches for QA system for space applications. A specific of CPTCs is that different materials and processes might be used for low-voltage (10 V and less) and high-voltage (above 10 V) capacitors, so performance and degradation processes in these groups require separate analysis. In this work, that is a part of the NASA Electronic Parts and Packaging (NEPP) program, degradation of AC and DC characteristics under environmental stresses at different temperatures and voltages have been studied in nine lots of commercial and automotive grade capacitors rated to 10 V. Results of analysis of leakage currents, high temperature storage (HTS) up to 5000 hrs in vacuum and air at different temperatures, and Highly Accelerated Life Testing (HALT) in the range from 85 C to 145 C are presented. Temperature and voltage acceleration factors were calculated based on approximation of distributions of degradation rates with a general log-linear Weibull model. Mechanisms of degradation and failures, and requirements for screening and qualification testing are discussed.

Silicon Detector System for High Rate EXAFS Applications.

PubMed

Pullia, A; Kraner, H W; Siddons, D P; Furenlid, L R; Bertuccio, G

1995-08-01

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

Silicon Detector System for High Rate EXAFS Applications

PubMed Central

Pullia, A.; Kraner, H. W.; Siddons, D. P.; Furenlid, L. R.; Bertuccio, G.

2015-01-01

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at −35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at −35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications. PMID:26538683

Application of continuous monitoring of honeybee colonies

USDA-ARS?s Scientific Manuscript database

Monitoring physical variables associated with honey bee colonies, including weight, temperature, humidity, respiratory gases, vibration, acoustics and forager traffic, in a continuous manner is becoming feasible for most researchers as the cost and size of electronic sensors and dataloggers decrease...

Meeting No Resistance.

ERIC Educational Resources Information Center

Buzdin, Alexander; Varlamov, Andrey

1991-01-01

Describes the history and the development of the field of superconductivity. Identifies the significant interaction of electrons to form Cooper pairs. Presents background theory, describes approaches, and discusses problems encountered in the search for better high temperature superconducting materials. Provides technological applications of…

Advanced Power Electronics Components

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.

2004-01-01

This paper will give a description and status of the Advanced Power Electronics Materials and Components Technology program being conducted by the NASA Glenn Research Center for future aerospace power applications. The focus of this research program is on the following: 1) New and/or significantly improved dielectric materials for the development of power capacitors with increased volumetric efficiency, energy density, and operating temperature. Materials being investigated include nanocrystalline and composite ceramic dielectrics and diamond-like carbon films; 2) New and/or significantly improved high frequency, high temperature, low loss soft magnetic materials for the development of transformers/inductors with increased power/energy density, electrical efficiency, and operating temperature. Materials being investigated include nanocrystalline and nanocomposite soft magnetic materials; 3) Packaged high temperature, high power density, high voltage, and low loss SiC diodes and switches. Development of high quality 4H- and 6H- SiC atomically smooth substrates to significantly improve device performance is a major emphasis of the SiC materials program; 4) Demonstration of high temperature (> 200 C) circuits using the components developed above.

Freestanding, Fiber-Based, Wearable Temperature Sensor with Tunable Thermal Index for Healthcare Monitoring.

PubMed

Trung, Tran Quang; Le, Hoang Sinh; Dang, Thi My Linh; Ju, Sanghyun; Park, Sang Yoon; Lee, Nae-Eung

2018-06-01

Fiber-based sensors integrated on textiles or clothing systems are required for the next generation of wearable electronic platforms. Fiber-based physical sensors are developed, but the development of fiber-based temperature sensors is still limited. Herein, a new approach to develop wearable temperature sensors that use freestanding single reduction graphene oxide (rGO) fiber is proposed. A freestanding and wearable temperature-responsive rGO fiber with tunable thermal index is obtained using simple wet spinning and a controlled graphene oxide reduction time. The freestanding fiber-based temperature sensor shows high responsivity, fast response time (7 s), and good recovery time (20 s) to temperature. It also maintains its response under an applied mechanical deformation. The fiber device fabricated by means of a simple process is easily integrated into fabric such as socks or undershirts and can be worn by a person to monitor the temperature of the environment and skin temperature without interference during movement and various activities. These results demonstrate that the freestanding fiber-based temperature sensor has great potential for fiber-based wearable electronic platforms. It is also promising for applications in healthcare and biomedical monitoring. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Simulation study of enhancing laser-driven multi-keV line-radiation through application of external magnetic fields

NASA Astrophysics Data System (ADS)

Kemp, G. Elijah; Colvin, J. D.; Fournier, K. B.; May, M. J.; Barrios, M. A.; Patel, M. V.; Koning, J. M.; Scott, H. A.; Marinak, M. M.

2015-11-01

Laser-driven, spectrally tailored, high-flux x-ray sources have been developed over the past decade for testing the radiation hardness of materials used in various civilian, space and military applications. The optimal electron temperatures for these x-ray sources occur around twice the desired photon energy. At the National Ignition Facility (NIF) laser, the available energy can produce plasmas with ~ 10keV electron temperatures which result in highly-efficient ~ 5keV radiation but less than optimal emission from the > 10keV sources. In this work, we present a possible venue for enhancing multi-keV x-ray emission on existing laser platforms through the application of an external magnetic field. Preliminary radiation-hydrodynamics calculations with Hydra suggest as much as 2 - 14 × increases in laser-to-x-ray conversion efficiency for 22 - 68keV K-shell sources are possible on the NIF laser - without any changes in laser-drive conditions - through the application of an external axial 50 T field. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract No. DE-AC52-07NA27344.

Thermodynamic properties and transport coefficients of two-temperature helium thermal plasmas

NASA Astrophysics Data System (ADS)

Guo, Xiaoxue; Murphy, Anthony B.; Li, Xingwen

2017-03-01

Helium thermal plasmas are in widespread use in arc welding and many other industrial applications. Simulation of these processes relies on accurate plasma property data, such as plasma composition, thermodynamic properties and transport coefficients. Departures from LTE (local thermodynamic equilibrium) generally occur in some regions of helium plasmas. In this paper, properties are calculated allowing for different values of the electron temperature, T e, and heavy-species temperature, T h, at atmospheric pressure from 300 K to 30 000 K. The plasma composition is first calculated using the mass action law, and the two-temperature thermodynamic properties are then derived. The viscosity, diffusion coefficients, electrical conductivity and thermal conductivity of the two-temperature helium thermal plasma are obtained using a recently-developed method that retains coupling between electrons and heavy species by including the electron-heavy-species collision term in the heavy-species Boltzmann equation. It is shown that the viscosity and the diffusion coefficients strongly depend on non-equilibrium ratio θ (θ ={{T}\\text{e}}/{{T}\\text{h}} ), through the plasma composition and the collision integrals. The electrical conductivity, which depends on the electron number density and ordinary diffusion coefficients, and the thermal conductivity have similar dependencies. The choice of definition of the Debye length is shown to affect the electrical conductivity significantly for θ  >  1. By comparing with literature data, it is shown that the coupling between electrons and heavy species has a significant influence on the electrical conductivity, but not on the viscosity. Plasma properties are tabulated in the supplementary data.

Electronic properties of carbon fibers intercalated with copper chloride

NASA Technical Reports Server (NTRS)

Oshima, H.; Natarajan, V.; Woollam, J. A.; Yavrouian, A.; Haugland, E. J.; Tsuzuku, T.

1984-01-01

Copper chloride intercalated pitch-based carbon fibers are found to have electrical resistivities as low as 12.9 micro-ohm-cm, and are air- and thermally-stable at and above room temperature. This is therefore a good candidate system for conductor application. In addition, Shubnikov-deHaas quantum oscillatory effects were found, and electronic properties of the intercalated fiber are studied using magnetic fields to 20 tesla.

Wide Bandgap Semiconductor Nanowires for Electronic, Photonic and Sensing Devices

DTIC Science & Technology

2012-01-05

oxide -based thin film transistors ( TFTs ) have attracted much attention for applications like flexible electronic devices. The...crystals, and ~ 1.5 cm2.V-1.s-1 for pentacene thin films ). A number of groups have demonstrated TFTs based on α- oxide semiconductors such as zinc oxide ...show excellent long-term stability at room temperature. Results: High-performance amorphous (α-) InGaZnO-based thin film transistors ( TFTs )

Modulating the electronic and magnetic properties of bilayer borophene via transition metal atoms intercalation: from metal to half metal and semiconductor

NASA Astrophysics Data System (ADS)

Zhang, Xiuyun; Sun, Yi; Ma, Liang; Zhao, Xinli; Yao, Xiaojing

2018-07-01

Borophene, a two-dimensional monolayer made of boron atoms, has attracted wide attention due to its appealing properties. Great efforts have been devoted to fine tuning its electronic and magnetic properties for desired applications. Herein, we theoretically investigate the versatile electronic and magnetic properties of bilayer borophene (BLB) intercalated by 3d transition metal (TM) atoms, TM@BLBs (TM = Ti-Fe), using ab initio calculations. Four allotropes of AA-stacking (α 1-, β-, β 12- and χ 3-) BLBs with different intercalation concentrations of TM atoms are considered. Our results show that the TM atoms are strongly bonded to the borophene layers with fairly large binding energies, around 6.31 ∼ 15.44 eV per TM atom. The BLBs with Cr and Mn intercalation have robust ferromagnetism, while for the systems decorated with Fe atoms, fruitful magnetic properties, such as nonmagnetic, ferromagnetic or antiferromagnetic, are identified. In particular, the α 1- and β-BLBs intercalated by Mn or Fe atom can be transformed into a semiconductor, half metal or graphene-like semimetal. Moreover, some heavily doped TM@BLBs expose high Curie temperatures above room temperature. The attractive properties of TM@BLBs entail an efficient way to modulate the electronic and magnetic properties of borophene sheets for advanced applications.

Burning Graphene Layer-by-Layer

PubMed Central

Ermakov, Victor A.; Alaferdov, Andrei V.; Vaz, Alfredo R.; Perim, Eric; Autreto, Pedro A. S.; Paupitz, Ricardo; Galvao, Douglas S.; Moshkalev, Stanislav A.

2015-01-01

Graphene, in single layer or multi-layer forms, holds great promise for future electronics and high-temperature applications. Resistance to oxidation, an important property for high-temperature applications, has not yet been extensively investigated. Controlled thinning of multi-layer graphene (MLG), e.g., by plasma or laser processing is another challenge, since the existing methods produce non-uniform thinning or introduce undesirable defects in the basal plane. We report here that heating to extremely high temperatures (exceeding 2000 K) and controllable layer-by-layer burning (thinning) can be achieved by low-power laser processing of suspended high-quality MLG in air in “cold-wall” reactor configuration. In contrast, localized laser heating of supported samples results in non-uniform graphene burning at much higher rates. Fully atomistic molecular dynamics simulations were also performed to reveal details of oxidation mechanisms leading to uniform layer-by-layer graphene gasification. The extraordinary resistance of MLG to oxidation paves the way to novel high-temperature applications as continuum light source or scaffolding material. PMID:26100466

Collapse of ferromagnetism in itinerant-electron system: A magnetic, transport properties, and high pressure study of (Hf,Ta)Fe2 compounds

NASA Astrophysics Data System (ADS)

Diop, L. V. B.; Kastil, J.; Isnard, O.; Arnold, Z.; Kamarad, J.

2014-10-01

The magnetism and transport properties were studied for Laves (Hf,Ta)Fe2 itinerant-electron compounds, which exhibit a temperature-induced first-order transition from the ferromagnetic (FM) to the antiferromagnetic (AFM) state upon heating. At finite temperatures, the field-induced metamagnetic phase transition between the AFM and FM has considerable effects on the transport properties of these model metamagnetic compounds. A large negative magnetoresistance of about 14% is observed in accordance with the metamagnetic transition. The magnetic phase diagram is determined for the Laves Hf1-xTaxFe2 series and its Ta concentration dependence discussed. An unusual behavior is revealed in the paramagnetic state of intermediate compositions, it gives rise to the rapid increase and saturation of the local spin fluctuations of the 3d electrons. This new result is analysed in the frame of the theory of Moriya. For a chosen composition Hf0.825Ta0.175Fe2, exhibiting such remarkable features, a detailed investigation is carried out under hydrostatic pressure up to 1 GPa in order to investigate the volume effect on the magnetic properties. With increasing pressure, the magnetic transition temperature TFM-AFM from ferromagnetic to antiferromagnetic order decreases strongly non-linearly and disappears at a critical pressure of 0.75 GPa. In the pressure-induced AFM state, the field-induced first-order AFM-FM transition appears and the complex temperature dependence of the AFM-FM transition field is explained by the contribution from both the magnetic and elastic energies caused by the significant temperature variation of the amplitude of the local Fe magnetic moment. The application of an external pressure leads also to the progressive decrease of the Néel temperature TN. In addition, a large pressure effect on the spontaneous magnetization MS for pressures below 0.45 GPa, dln(Ms)/dP = -6.3 × 10-2 GPa-1 was discovered. The presented results are consistent with Moriya's theoretical predictions and can significantly help to better understand the underlying physics of itinerant electron magnetic systems nowadays widely investigated for both fundamental and applications purposes.

Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Pellegrini, G.; Godignon, P.; Quirion, D.; Hidalgo, S.; Matilla, O.; Fontserè, A.; Molas, B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Pothin, D.; Fajardo, P.

2018-01-01

Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines, as well as other astronomy and space applications. Owing to their lower susceptibility to variable temperature and illumination conditions, there is also special interest in silicon carbide devices for some of these applications. Moreover, radiation hardness of the involved technologies is a major concern for high-energy physics and space applications. This work presents four-quadrant photodiodes produced on ultrathin (10 μm) and bulk Si, as well as on SiC epilayer substrates. An extensive electrical characterization has been carried out by using current-voltage (I-V) and capacitance-voltage (C-V) techniques. The impact of different temperature (from -50oC to 175oC) and visible light conditions on the electrical characteristics of the devices has been evaluated. Radiation effects caused by 2 MeV electron irradiation up to 1×1014, 1×1015 and 1×1016 e/cm2 fluences have been studied. Special attention has been devoted to the study of charge build-up in diode interquadrant isolation, as well as its impact on interquadrant resistance. The study of these electrical properties and its radiation-induced degradation should be taken into account for device applications.

Transport coefficients and heat fluxes in non-equilibrium high-temperature flows with electronic excitation

NASA Astrophysics Data System (ADS)

Istomin, V. A.; Kustova, E. V.

2017-02-01

The influence of electronic excitation on transport processes in non-equilibrium high-temperature ionized mixture flows is studied. Two five-component mixtures, N 2 / N2 + / N / N + / e - and O 2 / O2 + / O / O + / e - , are considered taking into account the electronic degrees of freedom for atomic species as well as the rotational-vibrational-electronic degrees of freedom for molecular species, both neutral and ionized. Using the modified Chapman-Enskog method, the transport coefficients (thermal conductivity, shear viscosity and bulk viscosity, diffusion and thermal diffusion) are calculated in the temperature range 500-50 000 K. Thermal conductivity and bulk viscosity coefficients are strongly affected by electronic states, especially for neutral atomic species. Shear viscosity, diffusion, and thermal diffusion coefficients are not sensible to electronic excitation if the size of excited states is assumed to be constant. The limits of applicability for the Stokes relation are discussed; at high temperatures, this relation is violated not only for molecular species but also for electronically excited atomic gases. Two test cases of strongly non-equilibrium flows behind plane shock waves corresponding to the spacecraft re-entry (Hermes and Fire II) are simulated numerically. Fluid-dynamic variables and heat fluxes are evaluated in gases with electronic excitation. In inviscid flows without chemical-radiative coupling, the flow-field is weakly affected by electronic states; however, in viscous flows, their influence can be more important, in particular, on the convective heat flux. The contribution of different dissipative processes to the heat transfer is evaluated as well as the effect of reaction rate coefficients. The competition of diffusion and heat conduction processes reduces the overall effect of electronic excitation on the convective heating, especially for the Fire II test case. It is shown that reliable models of chemical reaction rates are of great importance for accurate predictions of the fluid dynamic variables and heat fluxes.

Structure, Surface Morphology, and Optical and Electronic Properties of Annealed SnS Thin Films Obtained by CBD

NASA Astrophysics Data System (ADS)

Reghima, Meriem; Akkari, Anis; Guasch, Cathy; Turki-Kamoun, Najoua

2014-09-01

SnS thin films were initially coated onto Pyrex substrates by the chemical bath deposition (CBD) method and annealed at various temperatures ranging from 200°C to 600°C for 30 min in nitrogen gas. X-ray diffraction (XRD) analysis revealed that a structural transition from face-centered cubic to orthorhombic occurs when the annealing temperature is over 500°C. The surface morphology of all thin layers was investigated by means of scanning electron microscopy and atomic force microscopy. The elemental composition of Sn and S, as measured by energy dispersive spectroscopy, is near the stoichiometric ratio. Optical properties studied by means of transmission and reflection measurements show an increase in the absorption coefficient with increasing annealing temperatures. The band gap energy is close to 1.5 eV, which corresponds to the optimum for photovoltaic applications. Last, the thermally stimulated current measurements show that the electrically active traps located in the band gap disappear after annealing at 500°C. These results suggest that, once again, annealing as a post-deposition treatment may be useful for improving the physical properties of the SnS layers included in photovoltaic applications. Moreover, the thermo-stimulated current method may be of practical relevance to explore the electronic properties of more conventional industrial methods, such as sputtering and chemical vapor deposition.

Structure, electrical characteristics, and high-temperature stability of aerosol jet printed silver nanoparticle films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahman, Md Taibur; McCloy, John; Panat, Rahul, E-mail: rahul.panat@wsu.edu, E-mail: rvchintalapalle@utep.edu

Printed electronics has emerged as a versatile eco-friendly fabrication technique to create sintered nanoparticle (NP) films on arbitrary surfaces with an excellent control over the film microstructure. While applicability of such films for high-temperature applications is not explored previously, herein we report the high-temperature electrical stability of silver (Ag) metal NP films fabricated using an Aerosol Jet based printing technique and demonstrate that this behavior is dictated by changes in the film microstructure. In-situ high temperature (24–500 °C) impedance spectroscopy measurements show that the real part of the impedance increases with increasing temperature up to 150 °C, at which point a decreasingmore » trend prevails until 300 °C, followed again by an increase in impedance. The electrical behavior is correlated with the in-situ grain growth of the Ag NP films, as observed afterwards by scanning electron microscopy and X-ray diffraction (XRD), and could be tailored by controlling the initial microstructure through sintering conditions. Using combined diffraction and spectroscopic analytical methods, it is demonstrated the Aerosol Jet printed Ag NP films exhibit enhanced thermal stability and oxidation resistance. In addition to establishing the conditions for stability of Ag NP films, the results provide a fundamental understanding of the effect of grain growth and reduction in grain boundary area on the electrical stability of sintered NP films.« less

Structure, electrical characteristics, and high-temperature stability of aerosol jet printed silver nanoparticle films

NASA Astrophysics Data System (ADS)

Rahman, Md Taibur; McCloy, John; Ramana, C. V.; Panat, Rahul

2016-08-01

Printed electronics has emerged as a versatile eco-friendly fabrication technique to create sintered nanoparticle (NP) films on arbitrary surfaces with an excellent control over the film microstructure. While applicability of such films for high-temperature applications is not explored previously, herein we report the high-temperature electrical stability of silver (Ag) metal NP films fabricated using an Aerosol Jet based printing technique and demonstrate that this behavior is dictated by changes in the film microstructure. In-situ high temperature (24-500 °C) impedance spectroscopy measurements show that the real part of the impedance increases with increasing temperature up to 150 °C, at which point a decreasing trend prevails until 300 °C, followed again by an increase in impedance. The electrical behavior is correlated with the in-situ grain growth of the Ag NP films, as observed afterwards by scanning electron microscopy and X-ray diffraction (XRD), and could be tailored by controlling the initial microstructure through sintering conditions. Using combined diffraction and spectroscopic analytical methods, it is demonstrated the Aerosol Jet printed Ag NP films exhibit enhanced thermal stability and oxidation resistance. In addition to establishing the conditions for stability of Ag NP films, the results provide a fundamental understanding of the effect of grain growth and reduction in grain boundary area on the electrical stability of sintered NP films.

Modulation of the magnetic domain size induced by an electric field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ando, F.; Kakizakai, H.; Yamada, K.

2016-07-11

The electric field (EF) effect on the magnetic domain structure of a Pt/Co system was studied, where an EF was applied to the top surface of the Co layer. The width of the maze domain was significantly modified by the application of the EF at a temperature slightly below the Curie temperature. After a detailed analysis, a change in the microscopic exchange stiffness induced by the EF application was suggested to dominate the modulation of the domain width observed in the experiment. The accumulation of electrons at the surface of the Co layer resulted in an increase in the microscopicmore » exchange stiffness and the Curie temperature. The result was consistent with the recent theoretical prediction.« less

Cryogenic Evaluation of an Advanced DC/DC Converter Module for Deep Space Applications

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.; Hammoud, Ahmad; Gerber, Scott S.; Patterson, Richard

2003-01-01

DC/DC converters are widely used in power management, conditioning, and control of space power systems. Deep space applications require electronics that withstand cryogenic temperature and meet a stringent radiation tolerance. In this work, the performance of an advanced, radiation-hardened (rad-hard) commercial DC/DC converter module was investigated at cryogenic temperatures. The converter was investigated in terms of its steady state and dynamic operations. The output voltage regulation, efficiency, terminal current ripple characteristics, and output voltage response to load changes were determined in the temperature range of 20 to -140 C. These parameters were obtained at various load levels and at different input voltages. The experimental procedures along with the results obtained on the investigated converter are presented and discussed.

Status and future perspective of applications of high temperature superconductors

NASA Astrophysics Data System (ADS)

Tanaka, Shoji

The material research on the high temperature superconductivity for the past ten years gave us sufficient information on the new phenomena of these new materials. It seems that new applications in a very wide range of industries are increasing rapidly. In this report three main topics of the applications are given ; [a] progress of the superconducting bulk materials and their applications to the flywheel electricity storage system and others, [b] progress in the development of superconducting tapes and their applications to power cables, the high field superconducting magnet for the SMES and for the pulling system of large silicon single crystal, and [c] development of new superconducting electronic devices (SFQ) and the possiblity of the application to next generation supercomputers. These examples show the great capability of the superconductivity technology and it is expected that the real superconductivity industry will take off around the year of 2005.

Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

NASA Astrophysics Data System (ADS)

Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Artola, L.; Sahu, P. K.

2016-09-01

In this paper, a novel N-channel Tunnel Field Effect Transistor (TFET) i.e., Trigate Silicon-ON-Insulator (SOI) N-TFET with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (IOFF) by keeping in mind the sensitivity towards temperature. The proposed model can achieve a Sub-threshold swing less than 35 mV/decade at various temperatures, which is desirable for designing low power CTFET for digital circuit applications. In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region. High-k Spacer i.e., HfO2 is used to enhance the device performance and also it avoids overlapping of transistors in an integrated circuits (IC's). We have designed a reliable device by performing the temperature analysis on Transfer characteristics, Drain characteristics and also on various performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF, Trans-conductance (gm), Trans-conductance Generation Factor (TGF), Sub-threshold Swing (SS) to observe the applications towards harsh temperature environment.

Electronic circuitry development in a micropyrotechnic system for micropropulsion applications

NASA Astrophysics Data System (ADS)

Puig-Vidal, Manuel; Lopez, Jaime; Miribel, Pere; Montane, Enric; Lopez-Villegas, Jose M.; Samitier, Josep; Rossi, Carole; Camps, Thierry; Dumonteuil, Maxime

2003-04-01

An electronic circuitry is proposed and implemented to optimize the ignition process and the robustness of a microthruster. The principle is based on the integration of propellant material within a micromachined system. The operational concept is simply based on the combustion of an energetic propellant stored in a micromachined chamber. Each thruster contains three parts (heater, chamber, nozzle). Due to the one shot characteristic, microthrusters are fabricated in 2D array configuration. For the functioning of this kind of system, one critical point is the optimization of the ignition process as a function of the power schedule delivered by electronic devices. One particular attention has been paid on the design and implementation of an electronic chip to control and optimize the system ignition. Ignition process is triggered by electrical power delivered to a polysilicon resistance in contact with the propellant. The resistance is used to sense the temperature on the propellant which is in contact. Temperature of the microthruster node before the ignition is monitored via the electronic circuitry. A pre-heating process before ignition seems to be a good methodology to optimize the ignition process. Pre-heating temperature and pre-heating time are critical parameters to be adjusted. Simulation and experimental results will deeply contribute to improve the micropyrotechnic system. This paper will discuss all these point.

Electrical Switching of Perovskite Thin-Film Resistors

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Juan; Ignatiev, Alex

2010-01-01

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Joint Services Electronics Program.

DTIC Science & Technology

1984-06-01

INTEGRATION •6 1.1 Properties of Materials: Application of Channeling Radiation to a Study of the Properties 6 of Materials 1.1.1 Scientific...Objectives 6 1.1.2 Progress 7 1.1.2.1 Channeling Radiation from Si with an Oxygen Platelet Impurity 7 1.1.2.2 Calculated Potentials and Eigenvalues in GaAs...AIGaAs, and AlAs 11 1.1.2.3 Low Temperature Channeling Radiation 14 1.1.2.4 Electron Channeling Radiation from LiH and UD 14 1.1.2.5 12.6 MeV Electron

Solid state switch panel. [determination of optimum transducer type for required switches

NASA Technical Reports Server (NTRS)

Beenfeldt, E.

1973-01-01

An intensive study of various forms of transducers was conducted with application towards hermetically sealing the transducer and all electronics. The results of the study indicated that the Hall effect devices and a LED/phototransistor combination were the most practical for this type of application. Therefore, hardware was developed utilizing a magnet/Hall effect transducer for single action switches and LED/phototransistor transducers for rotary multiposition or potentiometer applications. All electronics could be housed in a hermetically sealed compartment. A number of switches were built and models were hermetically sealed to prove the feasibility of this type of fabrication. One of each type of switch was subjected to temperature cycling, vibration, and EMI tests. The results of these tests are presented.

Chemical Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

1993-01-01

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

Improved electron collisional line broadening for low-temperature ions and neutrals in plasma modeling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johns, H. M.; Kilcrease, D. P.; Colgan, J.

In this study, electron collisional broadening of observed spectral lines depends on plasma electron temperature and density. Including this effect in models of measured spectra is necessary to determine plasma conditions; however, computational limits make accurate line broadening treatments difficult to implement in large-scale plasma modeling efforts. In this paper, we report on improvements to the treatment of electron collisional line broadening and illustrate this with calculations using the Los Alamos ATOMIC code. We implement the Dimitrijevic and Konjevic modified semi-empirical model Dimitrijevic and Konjevic (1986 Astron. and Astrophy. 163 297 and 1987 Astron. Astrophys. 172 345), which we amendmore » by employing oscillator strengths from Hartree–Fock calculations. This line broadening model applies to near-neutral plasmas with electron temperatures of Te ~ 1 eV and electron densities of N e ~10 17 cm -3. We evaluate the D.K.-inspired model against the previous hydrogenic approach in ATOMIC through comparison to NIST-rated measurements for selected neutral and singly-ionized Ca, O, Fe, and Sn lines using both fine-structure and configuration-averaged oscillator strengths. The new D.K.-inspired model is significantly more accurate than the previous hydrogenic model and we find the use of configuration-averaged oscillator strengths a good approximation for applications such as LIBS (laser induced breakdown spectroscopy), for which we demonstrate the use of the D.K.-inspired model.« less

Improved electron collisional line broadening for low-temperature ions and neutrals in plasma modeling

DOE PAGES

Johns, H. M.; Kilcrease, D. P.; Colgan, J.; ...

2015-09-29

In this study, electron collisional broadening of observed spectral lines depends on plasma electron temperature and density. Including this effect in models of measured spectra is necessary to determine plasma conditions; however, computational limits make accurate line broadening treatments difficult to implement in large-scale plasma modeling efforts. In this paper, we report on improvements to the treatment of electron collisional line broadening and illustrate this with calculations using the Los Alamos ATOMIC code. We implement the Dimitrijevic and Konjevic modified semi-empirical model Dimitrijevic and Konjevic (1986 Astron. and Astrophy. 163 297 and 1987 Astron. Astrophys. 172 345), which we amendmore » by employing oscillator strengths from Hartree–Fock calculations. This line broadening model applies to near-neutral plasmas with electron temperatures of Te ~ 1 eV and electron densities of N e ~10 17 cm -3. We evaluate the D.K.-inspired model against the previous hydrogenic approach in ATOMIC through comparison to NIST-rated measurements for selected neutral and singly-ionized Ca, O, Fe, and Sn lines using both fine-structure and configuration-averaged oscillator strengths. The new D.K.-inspired model is significantly more accurate than the previous hydrogenic model and we find the use of configuration-averaged oscillator strengths a good approximation for applications such as LIBS (laser induced breakdown spectroscopy), for which we demonstrate the use of the D.K.-inspired model.« less

Electron spin control of optically levitated nanodiamonds in vacuum.

PubMed

Hoang, Thai M; Ahn, Jonghoon; Bang, Jaehoon; Li, Tongcang

2016-07-19

Electron spins of diamond nitrogen-vacancy (NV) centres are important quantum resources for nanoscale sensing and quantum information. Combining NV spins with levitated optomechanical resonators will provide a hybrid quantum system for novel applications. Here we optically levitate a nanodiamond and demonstrate electron spin control of its built-in NV centres in low vacuum. We observe that the strength of electron spin resonance (ESR) is enhanced when the air pressure is reduced. To better understand this system, we investigate the effects of trap power and measure the absolute internal temperature of levitated nanodiamonds with ESR after calibration of the strain effect. We also observe that oxygen and helium gases have different effects on both the photoluminescence and the ESR contrast of nanodiamond NV centres, indicating potential applications of NV centres in oxygen gas sensing. Our results pave the way towards a levitated spin-optomechanical system for studying macroscopic quantum mechanics.

Electron spin control of optically levitated nanodiamonds in vacuum

PubMed Central

Hoang, Thai M.; Ahn, Jonghoon; Bang, Jaehoon; Li, Tongcang

2016-01-01

Electron spins of diamond nitrogen-vacancy (NV) centres are important quantum resources for nanoscale sensing and quantum information. Combining NV spins with levitated optomechanical resonators will provide a hybrid quantum system for novel applications. Here we optically levitate a nanodiamond and demonstrate electron spin control of its built-in NV centres in low vacuum. We observe that the strength of electron spin resonance (ESR) is enhanced when the air pressure is reduced. To better understand this system, we investigate the effects of trap power and measure the absolute internal temperature of levitated nanodiamonds with ESR after calibration of the strain effect. We also observe that oxygen and helium gases have different effects on both the photoluminescence and the ESR contrast of nanodiamond NV centres, indicating potential applications of NV centres in oxygen gas sensing. Our results pave the way towards a levitated spin–optomechanical system for studying macroscopic quantum mechanics. PMID:27432560

Electron spin control of optically levitated nanodiamonds in vacuum

NASA Astrophysics Data System (ADS)

Hoang, Thai M.; Ahn, Jonghoon; Bang, Jaehoon; Li, Tongcang

2016-07-01

Electron spins of diamond nitrogen-vacancy (NV) centres are important quantum resources for nanoscale sensing and quantum information. Combining NV spins with levitated optomechanical resonators will provide a hybrid quantum system for novel applications. Here we optically levitate a nanodiamond and demonstrate electron spin control of its built-in NV centres in low vacuum. We observe that the strength of electron spin resonance (ESR) is enhanced when the air pressure is reduced. To better understand this system, we investigate the effects of trap power and measure the absolute internal temperature of levitated nanodiamonds with ESR after calibration of the strain effect. We also observe that oxygen and helium gases have different effects on both the photoluminescence and the ESR contrast of nanodiamond NV centres, indicating potential applications of NV centres in oxygen gas sensing. Our results pave the way towards a levitated spin-optomechanical system for studying macroscopic quantum mechanics.

APPLICATIONS OF CATHODOLUMINESCENCE OF QUARTZ AND FELDSPAR TO SEDIMENTARY PETROLOGY.

USGS Publications Warehouse

Ruppert, Leslie F.

1987-01-01

Cathodoluminescence (CL), the emission of visible light during electron bombardment, was first used in sandstone petrology in the mid-1960's. CL techniques are especially useful for determining the origin and source of quartz and feldspar, two of the most common constituents in clastic rocks. CL properties of both minerals are dependent on their temperature of crystallization, duration of cooling, and/or history of deformation. Detrital quartz and feldspar are typically derived from igneous and metamorphic sources and luminesce in the visible range whereas authigenic quartz and feldspar form at low temperatures and do not luminesce. Quantification of luminescent and non-luminescent quartz and feldspar with the scanning electron microscope, electron microprobe, or a commercial CL device can allow for the determination of origin, diagenesis, and source of clastic rocks when used in conjunction with field and other petrographic analyses.

Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

NASA Astrophysics Data System (ADS)

Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl-Mikael

2017-07-01

4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P- E hysteresis loops measured at room temperature showed maximum 2 P r of 48 μC/cm2, large enough for wide read margins. P- E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

Influence of chemical ordering on the thermal conductivity and electronic relaxation in FePt thin films in heat assisted magnetic recording applications

DOE PAGES

Giri, Ashutosh; Wee, Sung Hun; Jain, Shikha; ...

2016-08-26

Here, we report on the out-of-plane thermal conductivities of tetragonal L1 0 FePt (001) easy-axis and cubic A1 FePt thin films via time-domain thermoreflectance over a temperature range from 133 K to 500 K. The out-of-plane thermal conductivity of the chemically ordered L10 phase with alternating Fe and Pt layers is ~23% greater than the thermal conductivity of the disordered A1 phase at room temperature and below. However, as temperature is increased above room temperature, the thermal conductivities of the two phases begin to converge. Molecular dynamics simulations on model FePt structures support our experimental findings and help shed moremore » light into the relative vibrational thermal transport properties of the L1 0 and A1 phases. Furthermore, unlike the varying temperature trends in the thermal conductivities of the two phases, the electronic scattering rates in the out-of-plane direction of the two phases are similar for the temperature range studied in this work.« less

Pathways for tailoring the magnetostructural behavior of FeRh-based systems

NASA Astrophysics Data System (ADS)

Barua, Radhika

2014-03-01

The prediction of phase transition temperatures in functional materials provides dual benefits of supplying insight into fundamental drivers underlying the phase transition, as well as enabling new and improved technological applications that employ the material. In this work, studies focused on understanding the magnetostructural phase transition of FeRh as a function of elemental substitution, provides guidance for tailoring phase transitions in this compound, with possible extensions to other intermetallic-based magnetostructural compounds. Clear trends in the magnetostructural temperatures (Tt) of alloys of composition Fe(Rh1-xMx) or (Fe1-xMx) Rh (M = 3 d, 4 d or 5 d transition metals), as reported in literature since 1961, were identified and confirmed as a function of the valence band electron concentration ((s + d) electrons/atom) of the system. It is observed that substitution of 3 dor 4 delements (x <= 6.5 at%) into B2-ordered FeRh compounds causes Ttto increase to a maximum around a critical valence band electron concentration (ev *) of 8.50 electrons/atom and then decrease. Substitution of 5 delements echoes this trend but with an overall increase in Ttand a shift in ev * to 8.52 electrons/atom. For ev>8.65 electrons/atom, FeRh-based alloys cease to adopt the B2-ordered crystallographic structure in favor of the chemically disordered A1-type structure or the ordered L10-type structure. This phenomenological model has been confirmed through synthesis and characterization of FeRh alloys with Cu, Ni and Au additions. The success of this model in confirming existing data trends in chemically-substituted FeRh and predicting new composition-transition temperature correlations emphasizes the strong interplay between the electronic spin configuration, the electronic band structure, and crystal lattice of this system. Further these results provide pathways for tailoring the magnetostructural behavior and the associated functional response of FeRh-based systems for potential technological applications. Research was performed under the auspices of the U.S. Department of Energy (Contract No. DE-SC0005250).

Hydrogenated TiO2 Thin Film for Accelerating Electron Transport in Highly Efficient Planar Perovskite Solar Cells.

PubMed

Yao, Xin; Liang, Junhui; Li, Yuelong; Luo, Jingshan; Shi, Biao; Wei, Changchun; Zhang, Dekun; Li, Baozhang; Ding, Yi; Zhao, Ying; Zhang, Xiaodan

2017-10-01

Intensive studies on low-temperature deposited electron transport materials have been performed to improve the efficiency of n-i-p type planar perovskite solar cells to extend their application on plastic and multijunction device architectures. Here, a TiO 2 film with enhanced conductivity and tailored band edge is prepared by magnetron sputtering at room temperature by hydrogen doping (HTO), which accelerates the electron extraction from perovskite photoabsorber and reduces charge transfer resistance, resulting in an improved short circuit current density and fill factor. The HTO film with upward shifted Fermi level guarantees a smaller loss on V OC and facilitates the growth of high-quality absorber with much larger grains and more uniform size, leading to devices with negligible hysteresis. In comparison with the pristine TiO 2 prepared without hydrogen doping, the HTO-based device exhibits a substantial performance enhancement leading to an efficiency of 19.30% and more stabilized photovoltaic performance maintaining 93% of its initial value after 300 min continuous illumination in the glove box. These properties permit the room-temperature magnetron sputtered HTO film as a promising electron transport material for flexible and tandem perovskite solar cell in the future.

Qualification and implementation of line ratio spectroscopy on helium as plasma edge diagnostic at ASDEX Upgrade

NASA Astrophysics Data System (ADS)

Griener, M.; Muñoz Burgos, J. M.; Cavedon, M.; Birkenmeier, G.; Dux, R.; Kurzan, B.; Schmitz, O.; Sieglin, B.; Stroth, U.; Viezzer, E.; Wolfrum, E.; the ASDEX Upgrade Team

2018-02-01

A new thermal helium beam diagnostic has been implemented as plasma edge diagnostic at the ASDEX Upgrade (AUG) tokamak. The helium beam is built to measure the electron density n e and temperature T e simultaneously with high spatial and temporal resolution in order to investigate steady-state as well as fast transport processes in the plasma edge region. For the thermal helium beam emission line ratio spectroscopy, neutral helium is locally injected into the plasma by a piezo valve. This enabled the measurement of the line resolved emission intensities of seven He I lines for different plasma scenarios in AUG. The different line ratios can be used together with a collisional-radiative model (CRM) to reconstruct the underlying electron temperature and density. Ratios from the same spin species are used for the electron density reconstruction, whereas spin mixed ratios are sensitive to electron temperature changes. The different line ratios as well as different CRMs are tested for their suitability for diagnostic applications. Furthermore their consistency in calculating identical parameters is validated and the resulting profiles are compared to other available diagnostics at AUG.

Layout and results from the initial operation of the high-resolution x-ray imaging crystal spectrometer on the Large Helical Device.

PubMed

Pablant, N A; Bitter, M; Delgado-Aparicio, L; Goto, M; Hill, K W; Lazerson, S; Morita, S; Roquemore, A L; Gates, D; Monticello, D; Nielson, H; Reiman, A; Reinke, M; Rice, J E; Yamada, H

2012-08-01

First results of ion and electron temperature profile measurements from the x-ray imaging crystal spectrometer (XICS) diagnostic on the Large Helical Device (LHD) are presented. This diagnostic system has been operational since the beginning of the 2011 LHD experimental campaign and is the first application of the XICS diagnostic technique to helical plasma geometry. The XICS diagnostic provides measurements of ion and electron temperature profiles in LHD with a spatial resolution of 2 cm and a maximum time resolution of 5 ms (typically 20 ms). Ion temperature profiles from the XICS diagnostic are possible under conditions where charge exchange recombination spectroscopy (CXRS) is not possible (high density) or is perturbative to the plasma (low density or radio frequency heated plasmas). Measurements are made by using a spherically bent crystal to provide a spectrally resolved 1D image of the plasma from line integrated emission of helium-like Ar(16 +). The final hardware design and configuration are detailed along with the calibration procedures. Line-integrated ion and electron temperature measurements are presented, and the measurement accuracy is discussed. Finally central temperature measurements from the XICS system are compared to measurements from the Thomson scattering and CXRS systems, showing excellent agreement.

A hot tip: imaging phenomena using in situ multi-stimulus probes at high temperatures

NASA Astrophysics Data System (ADS)

Nonnenmann, Stephen S.

2016-02-01

Accurate high temperature characterization of materials remains a critical challenge to the continued advancement of various important energy, nuclear, electronic, and aerospace applications. Future experimental studies must assist these communities to progress past empiricism and derive deliberate, predictable designs of material classes functioning within active, extreme environments. Successful realization of systems ranging from fuel cells and batteries to electromechanical nanogenerators and turbines requires a dynamic understanding of the excitation, surface-mediated, and charge transfer phenomena which occur at heterophase interfaces (i.e. vapor-solid, liquid-solid, solid-solid) and impact overall performance. Advancing these frontiers therefore necessitates in situ (operando) characterization methods capable of resolving, both spatially and functionally, the coherence between these complex, collective excitations, and their respective response dynamics, through studies within the operating regime. This review highlights recent developments in scanning probe microscopy in performing in situ imaging at high elevated temperatures. The influence of and evolution from vacuum-based electron and tunneling microscopy are briefly summarized and discussed. The scope includes the use of high temperature imaging to directly observe critical phase transition, electronic, and electrochemical behavior under dynamic temperature settings, thus providing key physical parameters. Finally, both challenges and directions in combined instrumentation are proposed and discussed towards the end.

Dissolution chemistry and biocompatibility of single-crystalline silicon nanomembranes and associated materials for transient electronics.

PubMed

Hwang, Suk-Won; Park, Gayoung; Edwards, Chris; Corbin, Elise A; Kang, Seung-Kyun; Cheng, Huanyu; Song, Jun-Kyul; Kim, Jae-Hwan; Yu, Sooyoun; Ng, Joanne; Lee, Jung Eun; Kim, Jiyoung; Yee, Cassian; Bhaduri, Basanta; Su, Yewang; Omennetto, Fiorenzo G; Huang, Yonggang; Bashir, Rashid; Goddard, Lynford; Popescu, Gabriel; Lee, Kyung-Mi; Rogers, John A

2014-06-24

Single-crystalline silicon nanomembranes (Si NMs) represent a critically important class of material for high-performance forms of electronics that are capable of complete, controlled dissolution when immersed in water and/or biofluids, sometimes referred to as a type of "transient" electronics. The results reported here include the kinetics of hydrolysis of Si NMs in biofluids and various aqueous solutions through a range of relevant pH values, ionic concentrations and temperatures, and dependence on dopant types and concentrations. In vitro and in vivo investigations of Si NMs and other transient electronic materials demonstrate biocompatibility and bioresorption, thereby suggesting potential for envisioned applications in active, biodegradable electronic implants.

Carbon dioxide electron cooling rates in the atmospheres of Mars and Venus

NASA Astrophysics Data System (ADS)

Campbell, L.; Brunger, M. J.; Rescigno, T. N.

2008-08-01

The cooling of electrons in collisions with carbon dioxide in the atmospheres of Venus and Mars is investigated. Calculations are performed with both previously accepted electron energy transfer rates and with new ones determined using more recent theoretical and experimental cross sections for electron impact on CO2. Emulation of a previous model for Venus confirms the validity of the current model and shows that use of the updated cross sections leads to cooling rates that are lower by one third. Application of the same model to the atmosphere of Mars gives more than double the previous cooling rates at altitudes where the electron temperature is very low.

Oxidation characteristics of MgF2 in air at high temperature

NASA Astrophysics Data System (ADS)

Chen, H. K.; Jie, Y. Y.; Chang, L.

2017-02-01

High temperature oxidation properties of MgF2 in air were studied. The changes of phase composition, macro surface morphology, weight and elemental composition of MgF2 samples with temperature were investigated by using XRD, EDS and gravimetric analyses. The results show that the oxidation reaction of MgF2 converted to MgO occurred at high temperature, and the reaction was accelerated by the increase of temperature and the presence of impurities. This result clarifies the understanding of the high temperature oxidation behavior of MgF2 in air, and provides a theoretical basis for the reasonable application of MgF2 in optical coating materials, electronic ceramic materials and magnesium melt protection.

Effect of annealing and In content on the properties of electron beam evaporated ZnO films

NASA Astrophysics Data System (ADS)

Mohamed, S. H.; Ali, H. M.; Mohamed, H. A.; Salem, A. M.

2005-08-01

The effect of both annealing and In content on the properties of ZnO films prepared by electron beam evaporation were investigated. The evaporation was carried out at room temperature from bulk samples prepared by sintering technique. X-ray diffraction showed that the structure of ZnO-In{2}O{3} films depends on both the In content and annealing temperature. Amorphous, highly transparent and relatively low resistive films which can be suitable for the usage as transparent electrode of organic light-emitting diode were obtained upon annealing at 300 circC. Partially crystalline, highly transparent and highly resistive films which can be used in piezoelectric applications were obtained upon annealing at 500 circC. For each composition the refractive index has no monotonic variation upon increasing annealing temperature.

Low-noise current amplifier based on mesoscopic Josephson junction.

PubMed

Delahaye, J; Hassel, J; Lindell, R; Sillanpää, M; Paalanen, M; Seppä, H; Hakonen, P

2003-02-14

We used the band structure of a mesoscopic Josephson junction to construct low-noise amplifiers. By taking advantage of the quantum dynamics of a Josephson junction, i.e., the interplay of interlevel transitions and the Coulomb blockade of Cooper pairs, we created transistor-like devices, Bloch oscillating transistors, with considerable current gain and high-input impedance. In these transistors, the correlated supercurrent of Cooper pairs is controlled by a small base current made up of single electrons. Our devices reached current and power gains on the order of 30 and 5, respectively. The noise temperature was estimated to be around 1 kelvin, but noise temperatures of less than 0.1 kelvin can be realistically achieved. These devices provide quantum-electronic building blocks that will be useful at low temperatures in low-noise circuit applications with an intermediate impedance level.

Encapsulation of LiFePO4 by in-situ graphitized carbon cage towards enhanced low temperature performance as cathode materials for lithium ion batteries

NASA Astrophysics Data System (ADS)

Yao, Bin; Ding, Zhaojun; Zhang, Jianxin; Feng, Xiaoyu; Yin, Longwei

2014-08-01

The severe capacity decay of LiFePO4 at low temperatures (≤0 °C) limits its wide applications as cathode materials for energy storage batteries. Creating comprehensive carbon network between particles with improved electronic conductivity is a well known solution to this problem. Here, a novel structured LiFePO4/C composite was prepared by a facile solid state route, in which nanosized LiFePO4 spheres were encapsulated by in-situ graphitized carbon cages. With the enhancement in electronic conductivity (2.15e-1 S cm-1), the composite presented excellent rate performance at room temperature and remarkable capacity retention at -40 °C, with charge transfer resistance much lower than commercial LiFePO4.

Experimentally determined wear behavior of an Al2O3-SiC composite from 25 to 1200 C

NASA Technical Reports Server (NTRS)

Dellacorte, Christopher; Farmer, Serene C.; Book, Patricia O.

1990-01-01

The sliding wear behavior of a self-mated alumina-silicon carbide whisker toughened composite was studied using optical, scanning electron (SEM) and transmission electron (TEM) microscopy. Because of its excellent strength and toughness properties this composite material is under consideration for use in heat engine applications for sliding contacts which operate at elevated temperatures. The composite's wear behavior and especially its wear mechanisms are not well understood. Pin-on-disk specimens were slid in air at 2.7 m/s sliding velocity, under a 26.5-N load, at temperatures 25 to 1200 C. Pin wear increased with increasing temperature. Based upon the microscopic analyses, the wear mechanism seems to be loosening of the reinforcing whiskers due to frictional and bulk heating. This leads to whisker pullout and increased wear.

Alloy design for intrinsically ductile refractory high-entropy alloys

NASA Astrophysics Data System (ADS)

Sheikh, Saad; Shafeie, Samrand; Hu, Qiang; Ahlström, Johan; Persson, Christer; Veselý, Jaroslav; Zýka, Jiří; Klement, Uta; Guo, Sheng

2016-10-01

Refractory high-entropy alloys (RHEAs), comprising group IV (Ti, Zr, Hf), V (V, Nb, Ta), and VI (Cr, Mo, W) refractory elements, can be potentially new generation high-temperature materials. However, most existing RHEAs lack room-temperature ductility, similar to conventional refractory metals and alloys. Here, we propose an alloy design strategy to intrinsically ductilize RHEAs based on the electron theory and more specifically to decrease the number of valence electrons through controlled alloying. A new ductile RHEA, Hf0.5Nb0.5Ta0.5Ti1.5Zr, was developed as a proof of concept, with a fracture stress of close to 1 GPa and an elongation of near 20%. The findings here will shed light on the development of ductile RHEAs for ultrahigh-temperature applications in aerospace and power-generation industries.

Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jongkyong; Gang, Suhyun; Jo, Yongcheol

We have investigated the temperature dependence of ballistic mobility in a 100 nm-long InGaAs/InAlAs metamorphic high-electron-mobility transistor designed for millimeter-wavelength RF applications. To extract the temperature dependence of quasi-ballistic mobility, our experiment involves measurements of the effective mobility in the low-bias linear region of the transistor and of the collision-dominated Hall mobility using a gated Hall bar of the same epitaxial structure. The data measured from the experiment are consistent with that of modeled ballistic mobility based on ballistic transport theory. These results advance the understanding of ballistic transport in various transistors with a nano-scale channel length that is comparable tomore » the carrier's mean free path in the channel.« less

Ionic and electronic transport properties in dense plasmas by orbital-free density functional theory

DOE PAGES

Sjostrom, Travis; Daligault, Jérôme

2015-12-09

We validate the application of our recent orbital-free density functional theory (DFT) approach, [Phys. Rev. Lett. 113, 155006 (2014)], for the calculation of ionic and electronic transport properties of dense plasmas. To this end, we calculate the self-diffusion coefficient, the viscosity coefficient, the electrical and thermal conductivities, and the reflectivity coefficient of hydrogen and aluminum plasmas. Very good agreement is found with orbital-based Kohn-Sham DFT calculations at lower temperatures. Because the computational costs of the method do not increase with temperature, we can produce results at much higher temperatures than is accessible by the Kohn-Sham method. Our results for warmmore » dense aluminum at solid density are inconsistent with the recent experimental results reported by Sperling et al. [Phys. Rev. Lett. 115, 115001 (2015)].« less

NASA/CARES dual-use ceramic technology spinoff applications

NASA Technical Reports Server (NTRS)

Powers, Lynn M.; Janosik, Lesley A.; Gyekenyesi, John P.; Nemeth, Noel N.

1994-01-01

NASA has developed software that enables American industry to establish the reliability and life of ceramic structures in a wide variety of 21st Century applications. Designing ceramic components to survive at higher temperatures than the capability of most metals and in severe loading environments involves the disciplines of statistics and fracture mechanics. Successful application of advanced ceramics material properties and the use of a probabilistic brittle material design methodology. The NASA program, known as CARES (Ceramics Analysis and Reliability Evaluation of Structures), is a comprehensive general purpose design tool that predicts the probability of failure of a ceramic component as a function of its time in service. The latest version of this software, CARESALIFE, is coupled to several commercially available finite element analysis programs (ANSYS, MSC/NASTRAN, ABAQUS, COSMOS/N4, MARC), resulting in an advanced integrated design tool which is adapted to the computing environment of the user. The NASA-developed CARES software has been successfully used by industrial, government, and academic organizations to design and optimize ceramic components for many demanding applications. Industrial sectors impacted by this program include aerospace, automotive, electronic, medical, and energy applications. Dual-use applications include engine components, graphite and ceramic high temperature valves, TV picture tubes, ceramic bearings, electronic chips, glass building panels, infrared windows, radiant heater tubes, heat exchangers, and artificial hips, knee caps, and teeth.

Effect of substrate and temperature on the electronic properties of monolayer molybdenum disulfide field-effect transistors

NASA Astrophysics Data System (ADS)

Yang, Qizhi; Fang, Jiajia; Zhang, Guangru; Wang, Quan

2018-03-01

The use of two-dimensional nanostructured molybdenum disulfide (MoS2) films in field-effect transistors (FETs) in place of graphene was investigated. Monolayer MoS2 films were fabricated by chemical vapor deposition. The output and transfer curves of supported and suspended MoS2 FETs were measured. The mobility of the suspended device reached 364.2 cm2 V-1 s-1 at 150 °C. The hysteresis of the supported device in transfer curves was much larger than that of the suspended device, and it increased at higher temperatures. These results indicate that the device mobility was limited by Coulomb scattering at ambient temperature, and surface/interface phonon scattering at 150 °C, and the injection of electrons, via quantum tunneling through the Schottky barrier at the contact, was enhanced at higher temperatures and led to the increase of the hysteresis. The suspended MoS2 films show potential for application as a channel material in electronic devices, and further understanding the causes of hysteresis in a material is important for its use in technologies, such as memory devices and sensing cells.

Columnar recombination for X-ray generated electron-holes in amorphous selenium and its significance in a-Se x-ray detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bubon, O.; Thunder Bay Regional Research Institute, Thunder Bay, Ontario, P7A 7T1; Jandieri, K.

Although amorphous selenium (a-Se) has a long and successful history of application in optical and X-ray imaging, some of its fundamental properties are still puzzling. In particularly, the mechanism of carrier recombination following x-ray excitation and electric field and temperature dependences of the electron-hole pair creation energy (W{sub ehp}) remain unclear. Using the combination of X-ray photocurrent and pulse height spectroscopy measurements, we measure W{sub ehp} in a wide range of temperatures (218–320 K) and electric fields (10–100 V/µm) and show that the conventional columnar recombination model which assumes Langevin recombination within a column (a primary electron track) fails to explain experimentalmore » results in a wide range of electric fields and temperatures. The reason for the failure of the conventional model is revealed in this work, and the theory of the columnar recombination is modified to include the saturation of the recombination rate at high electric field in order to account for the experimental results in the entire range of fields and temperatures.« less

Synthesis, Properties, and Applications Of Boron Nitride

NASA Technical Reports Server (NTRS)

Pouch, John J.; Alterovitz, Samuel A.

1993-01-01

Report describes synthesis, properties, and applications of boron nitride. Especially in thin-film form. Boron nitride films useful as masks in x-ray lithography; as layers for passivation of high-speed microelectronic circuits; insulating films; hard, wear-resistant, protective films for optical components; lubricants; and radiation detectors. Present status of single-crystal growth of boron nitride indicates promising candidate for use in high-temperature semiconductor electronics.

An easily accessible carbon material derived from carbonization of polyacrylonitrile ultrathin films: ambipolar transport properties and application in a CMOS-like inverter.

PubMed

Jiao, Fei; Zhang, Fengjiao; Zang, Yaping; Zou, Ye; Di, Chong'an; Xu, Wei; Zhu, Daoben

2014-03-04

Ultrathin carbon films were prepared by carbonization of a solution processed polyacrylonitrile (PAN) film in a moderate temperature range (500-700 °C). The films displayed balanced hole (0.50 cm(2) V(-1) s(-1)) and electron mobilities (0.20 cm(2) V(-1) s(-1)) under ambient conditions. Spectral characterization revealed that the electrical transport is due to the formation of sp(2) hybridized carbon during the carbonization process. A CMOS-like inverter demonstrated the potential application of this material in the area of carbon electronics, considering its processability and low-cost.

Electronically controlled mechanical seal for aerospace applications--Part 2: Transient tests

NASA Technical Reports Server (NTRS)

Wolff, Paul J.; Salant, Richard F.

1995-01-01

An electronically controlled mechanical seal for use as the purge gas seal in a liquid oxygen turbopump has been fabricated and tested under transient operating conditions. The thickness of the lubricating film is controlled by adjusting the coning of the carbon face. This is accomplished by applying a voltage to a piezoelectric actuator to which the carbon face is bonded. The seal has been operated with a closed-loop control system that utilizes either the leakage rate or seal face temperature as the feedback. Both speed and pressure transients have been imposed on the seal. The transient tests have demonstrated that the seal is capable of maintaing low leakage rates while limiting face temperatures.

Improved Confinement by Edge Multi-pulse Turbulent Heating on HT-6M Tokamak

NASA Astrophysics Data System (ADS)

Mao, Jian-shan; Luo, Jia-rong; Li, Jian-gang; Pan, Yuan; Wang, Mao-quan; Liu, Bao-hua; Wan, Yuan-xi; Li, Qiang; Wu, Xin-chao; Liang, Yun-feng; Xu, Yu-hong; Yu, Chang-xuan

1997-10-01

In the recent experiment on HT-6M tokamak, an improved ohmic confinement phase has been observed after application of the edge multi-pulse turbulent heating, and variance of plasma current ΔIp/Ip is about 14-20%. The improved edge plasma confinement phase is characterized by (a) increased average electron density bar Ne and electron temperature Te; (b) reduced Hα radiation from the edge; (c) steeper density and temperature profiles at the edge; (d) a more negative radial electric field over a region of ~ 5 mm deep inside the limiter; (e) a deeper electrostatic potential well at the edge; (f) reduced magnetic fluctuations at the edge.

Preparation of hollow magnetite microspheres and their applications as drugs carriers

PubMed Central

2012-01-01

Hollow magnetite microspheres have been synthesized by a simple process through a template-free hydrothermal approach. Hollow microspheres were surface modified by coating with a silica nanolayer. Pristine and modified hollow microparticles were characterized by field-emission electron microscopy, transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, FT-IR and Raman spectroscopy, and VSM magnetometry. The potential application of the modified hollow magnetite microspheres as a drug carrier was evaluated by using Rhodamine B and methotrexate as model drugs. The loading and release kinetics of both molecules showed a clear pH and temperature dependent profile. Graphical abstract Hollow magnetite microspheres have been synthesized. Load-release experiments with Rhodamine-B as a model drug and with Methotrexate (chemotherapy drug used in treating certain types of cancer) demonstrated the potential applications of these nanostructures in biomedical applications. PMID:22490731

Probing the electronic and local structural changes across the pressure-induced insulator-to-metal transition in VO2

NASA Astrophysics Data System (ADS)

Marini, C.; Bendele, M.; Joseph, B.; Kantor, I.; Mitrano, M.; Mathon, O.; Baldini, M.; Malavasi, L.; Pascarelli, S.; Postorino, P.

2014-11-01

Local and electronic structures of vanadium in \\text{VO}2 are studied across the high-pressure insulator-to-metal (IMT) transition using V K-edge x-ray absorption spectroscopy. Unlike the temperature-induced IMT, pressure-induced metallization leads to only subtle changes in the V K-edge prepeak structure, indicating a different mechanism involving smaller electronic spectral weight transfer close to the chemical potential. Intriguingly, upon application of the hydrostatic pressure, the electronic structure begins to show substantial changes well before the occurrence of the IMT and the associated structural transition to an anisotropic compression of the monoclinic metallic phase.

Electron spin control of optically levitated nanodiamonds in vacuum

NASA Astrophysics Data System (ADS)

Hoang, Thai; Ahn, Jonghoon; Bang, Jaehoon; Li, Tongcang

2016-05-01

Electron spins of diamond nitrogen-vacancy (NV) centers are important quantum resources for nanoscale sensing and quantum information. Combining such NV spin systems with levitated optomechanical resonators will provide a hybrid quantum system for many novel applications. Here we optically levitate a nanodiamond and demonstrate electron spin control of its built-in NV centers in low vacuum. We observe that the strength of electron spin resonance (ESR) is enhanced when the air pressure is reduced. To better understand this novel system, we also investigate the effects of trap power and measure the absolute internal temperature of levitated nanodiamonds with ESR after calibration of the strain effect.

Development of optimum process for electron beam cross-linking of high density polyethylene thermal energy storage pellets, process scale-up and production of application qualities of material

NASA Technical Reports Server (NTRS)

Salyer, I. O.

1980-01-01

The electron irradiation conditions required to prepare thermally from stable high density polyethylene (HDPE) were defined. The conditions were defined by evaluating the heat of fusion and the melting temperature of several HDPE specimens. The performance tests conducted on the specimens, including the thermal cycling tests in the thermal energy storage unit are described. The electron beam irradiation tests performed on the specimens, in which the total radiation dose received by the pellets, the electron beam current, the accelerating potential, and the atmospheres were varied, are discussed.

Clean Room Facility

NASA Image and Video Library

2016-09-07

NASA Glenn technician Ariana Miller prepares an ultrahigh vacuum chamber used to test the materials used in silicon carbide based sensors and electronics that can operate at extremely high temperatures (500 degrees Celsius and higher) for applications such as sensor systems for aircraft engines and Venus exploration.

Polarization of the Sunyaev-Zel'dovich effect: relativistic imprint of thermal and non-thermal plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emritte, Mohammad Shehzad; Colafrancesco, Sergio; Marchegiani, Paolo, E-mail: Sergio.Colafrancesco@wits.ac.za, E-mail: emrittes@yahoo.com, E-mail: Paolo.Marchegiani@wits.ac.za

2016-07-01

Inverse Compton (IC) scattering of the anisotropic CMB fluctuations off cosmic electron plasmas generates a polarization of the associated Sunyaev-Zel'dovich (SZ) effect. The polarized SZ effect has important applications in cosmology and in astrophysics of galaxy clusters. However, this signal has been studied so far mostly in the non-relativistic regime which is valid only in the very low electron temperature limit for a thermal electron population and, as such, has limited astrophysical applications. Partial attempts to extend this calculation to the IC scattering of a thermal electron plasma in the relativistic regime have been done but these cannot be appliedmore » to a more general or mildly relativistic electron distribution. In this paper we derive a general form of the SZ effect polarization that is valid in the full relativistic approach for both thermal and non-thermal electron plasmas, as well as for a generic combination of various electron population which can be co-spatially distributed in the environments of galaxy clusters or radiogalaxy lobes. We derive the spectral shape of the Stokes parameters induced by the IC scattering of every CMB multipole for both thermal and non-thermal electron populations, focussing in particular on the CMB quadrupole and octupole that provide the largest detectable signals in cosmic structures (like galaxy clusters). We found that the CMB quadrupole induced Stoke parameter Q is always positive with a maximum amplitude at a frequency ≈ 216 GHz which increases non-linearly with increasing cluster temperature. On the contrary, the CMB octupole induced Q spectrum shows a cross-over frequency which depends on the cluster electron temperature in a linear way, while it shows a non-linear dependence on the minimum momentum p {sub 1} of a non-thermal power-law spectrum as well as a linear dependence on the power-law spectral index of the non-thermal electron population. We discuss some of the possibilities to disentangle the quadrupole-induced Q spectrum from the octupole-induced one which will allow to measure these important cosmological quantities through the SZ effect polarization at different cluster locations in the universe. We finally apply our model to the Bullet cluster and derive the visibility windows of the total, quandrupole-induced and octupole-induced Stoke parameter Q in the frequency ranges accessible to SKA, ALMA, MILLIMETRON and CORE++ experiments.« less

Progress in distributed fiber optic temperature sensing

NASA Astrophysics Data System (ADS)

Hartog, Arthur H.

2002-02-01

The paper reviews the adoption of distributed temperature sensing (DTS) technology based on Raman backscatter. With one company alone having installed more than 400 units, the DTS is becoming accepted practice in several applications, notably in energy cable monitoring, specialised fire detection and oil production monitoring. The paper will provide case studies in these applications. In each case the benefit (whether economic or safety) will be addressed, together with key application engineering issues. The latter range from the selection and installation of the fibre sensor, the specific performance requirements of the opto-electronic equipment and the issues of data management. The paper will also address advanced applications of distributed sensing, notably the problem of monitoring very long ranges, which apply in subsea DC energy cables or in subsea oil wells linked to platforms through very long (e.g. 30km flowlines). These applications are creating the need for a new generation of DTS systems able to achieve measurements at up to 40km with very high temperature resolution, without sacrificing spatial resolution. This challenge is likely to drive the development of new concepts in the field of distributed sensing.

Aerospace Applications Of High Temperature Superconductivity

NASA Astrophysics Data System (ADS)

Anderson, W. W.

1988-05-01

The existence of superconductors with TcOOK (which implies device operating temper-atures the order of Top ≍45K) opens up a variety of potential applications within the aerospace/defense industry. This is partly due to the existence of well developed cooler technologies to reach this temperature regime and partly due to the present operation of some specialized components at cryogenic temperatures. In particular, LWIR focal planes may operate at 10K with some of the signal processing electronics at an intermediate temperature of 40K. Addition of high Tc superconducting components in the latter system may be "free" in the sense of additional system complexity required. The established techniques for cooling in the 20K to 50K temperature regime are either open cycle, expendable material (stored gas with Joule-Thomson expansion, liquid cryogen or solid cryogen) or mechanical refrigerators (Stirling cycle, Brayton cycle or closed cycle Joule-Thomson). The high Tc materials may also contribute to the development of coolers through magnetically levitated bearings or providing the field for a stage of magnetic refrigeration. The discovery of materials with Tc, 90K has generated a veritable shopping list of applications. The superconductor properties which are of interest for applications are (1) zero resistance, (2) Meissner effect, (3) phase coherence and (4) existence of an energy gap. The zero resistance property is significant in the development of high field magnets requiring neglible power to maintain the field. In addition to the publicized applications to rail guns and electromagnetic launcher, we can think of space born magnets for charged particle shielding or whistler mode propagation through a plasma sheath. Conductor losses dominate attenuation and dispersion in microstrip transmission lines. While the surface impedance of a superconductor is non vanishing, significant improvements in signal transmission may be obtained. The Meissner effect may be utilized for some magnetic shielding applications but the penetration depth and high frequency effects will have to be considered. Phase coherence forms the basis for Josephson junction devices which, in turn are used for mixers, detectors and parametric amplifiers in the microwave/millimeter wave regime and for A/D converters, sampling and switching circuits and voltage standards in electronics. The energy gap has been the basis of optical and IR detection through modulation of the order parameter (or gap energy) by generation of quasi particles.

Laser production and heating of plasma for MHD application

NASA Technical Reports Server (NTRS)

Jalufka, N. W.

1988-01-01

Experiments have been made on the production and heating of plasmas by the absorption of laser radiation. These experiments were performed to ascertain the feasibility of using laser-produced or laser-heated plasmas as the input for a magnetohydrodynamic (MHD) generator. Such a system would have a broad application as a laser-to-electricity energy converter for space power transmission. Experiments with a 100-J-pulsed CO2 laser were conducted to investigate the breakdown of argon gas by a high-intensity laser beam, the parameters (electron density and temperature) of the plasma produced, and the formation and propagation of laser-supported detonation (LSD) waves. Experiments were also carried out using a 1-J-pulsed CO2 laser to heat the plasma produced in a shock tube. The shock-tube hydrogen plasma reached electron densities of approximately 10 to the 17th/cu cm and electron temperatures of approximately 1 eV. Absorption of the CO2 laser beam by the plasma was measured, and up to approximately 100 percent absorption was observed. Measurements with a small MHD generator showed that the energy extraction efficiency could be very large with values up to 56 percent being measured.

Green light emitting nanostructures of Tb3+ doped LaOF prepared via ultrasound route applicable in display devices

NASA Astrophysics Data System (ADS)

Suresh, C.; Nagabhushana, H.; Basavaraj, R. B.; Prasad, B. Daruka

2017-05-01

For the first time Tb3+ (1-5 mol %) doped LaOF nanophosphors using Aloe vera (AV) leaves extract as bio-surfactant were synthesized by facile ultrasound supported sonochemical route at relatively high temperature (700°C) and short duration of 3h. The powder X-ray diffraction (PXRD) profiles of LaOF nanophosphors showed tetragonal structure. The morphological features of LaOF with effect of Sonication time and concentration of bio-surfactant were studied by scanning electron microscope (SEM). The particle size were estimated from transmission electron microscope (TEM) image was found to be in the range of 20-30 nm. The characteristic photoluminescence emission peaks at 487, 541, 586 and 620 nm in green region corresponding to 5D4→7Fj (j=6, 5, 4, 3) transitions of Tb3+ were observed. The LaOF: Tb3+ nanophosphors exhibit green luminescence with better chromaticity coordinates, colour purity and higher intensity under low-voltage electron beam excitation were observed by Commission International De I'Eclairage (CIE) along with colour correlated temperature (CCT). All results indicate that these obtained nanophosphors have potential applications in field emission display device.

Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance

NASA Astrophysics Data System (ADS)

Longtin, Rémi; Sanchez-Valencia, Juan Ramon; Shorubalko, Ivan; Furrer, Roman; Hack, Erwin; Elsener, Hansrudolf; Gröning, Oliver; Greenwood, Paul; Rupesinghe, Nalin; Teo, Kenneth; Leinenbach, Christian; Gröning, Pierangelo

2015-02-01

The joining of macroscopic films of vertically aligned multiwalled carbon nanotubes (CNTs) to titanium substrates is demonstrated by active vacuum brazing at 820 °C with a Ag-Cu-Ti alloy and at 880 °C with a Cu-Sn-Ti-Zr alloy. The brazing methodology was elaborated in order to enable the production of highly electrically and thermally conductive CNT/metal substrate contacts. The interfacial electrical resistances of the joints were measured to be as low as 0.35 Ω. The improved interfacial transport properties in the brazed films lead to superior electron field-emission properties when compared to the as-grown films. An emission current of 150 μA was drawn from the brazed nanotubes at an applied electric field of 0.6 V μm-1. The improvement in electron field-emission is mainly attributed to the reduction of the contact resistance between the nanotubes and the substrate. The joints have high re-melting temperatures up to the solidus temperatures of the alloys; far greater than what is achievable with standard solders, thus expanding the application potential of CNT films to high-current and high-power applications where substantial frictional or resistive heating is expected.

Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance

PubMed Central

Longtin, Rémi; Ramon Sanchez-Valencia, Juan; Shorubalko, Ivan; Furrer, Roman; Hack, Erwin; Elsener, Hansrudolf; Gröning, Oliver; Greenwood, Paul; Rupesinghe, Nalin; Teo, Kenneth; Leinenbach, Christian; Gröning, Pierangelo

2015-01-01

The joining of macroscopic films of vertically aligned multiwalled carbon nanotubes (CNTs) to titanium substrates is demonstrated by active vacuum brazing at 820 °C with a Ag–Cu–Ti alloy and at 880 °C with a Cu–Sn–Ti–Zr alloy. The brazing methodology was elaborated in order to enable the production of highly electrically and thermally conductive CNT/metal substrate contacts. The interfacial electrical resistances of the joints were measured to be as low as 0.35 Ω. The improved interfacial transport properties in the brazed films lead to superior electron field-emission properties when compared to the as-grown films. An emission current of 150 μA was drawn from the brazed nanotubes at an applied electric field of 0.6 V μm−1. The improvement in electron field-emission is mainly attributed to the reduction of the contact resistance between the nanotubes and the substrate. The joints have high re-melting temperatures up to the solidus temperatures of the alloys; far greater than what is achievable with standard solders, thus expanding the application potential of CNT films to high-current and high-power applications where substantial frictional or resistive heating is expected. PMID:27877755

Light-controlling, flexible and transparent ethanol gas sensor based on ZnO nanoparticles for wearable devices

PubMed Central

Zheng, Z. Q.; Yao, J. D.; Wang, B.; Yang, G. W.

2015-01-01

In recent years, owing to the significant applications of health monitoring, wearable electronic devices such as smart watches, smart glass and wearable cameras have been growing rapidly. Gas sensor is an important part of wearable electronic devices for detecting pollutant, toxic, and combustible gases. However, in order to apply to wearable electronic devices, the gas sensor needs flexible, transparent, and working at room temperature, which are not available for traditional gas sensors. Here, we for the first time fabricate a light-controlling, flexible, transparentand working at room-temperature ethanol gas sensor by using commercial ZnO nanoparticles. The fabricated sensor not only exhibits fast and excellent photoresponse, but also shows high sensing response to ethanol under UV irradiation. Meanwhile, its transmittance exceeds 62% in the visible spectral range, and the sensing performance keeps the same even bent it at a curvature angle of 90o. Additionally, using commercial ZnO nanoparticles provides a facile and low-cost route to fabricate wearable electronic devices. PMID:26076705

Light-controlling, flexible and transparent ethanol gas sensor based on ZnO nanoparticles for wearable devices.

PubMed

Zheng, Z Q; Yao, J D; Wang, B; Yang, G W

2015-06-16

In recent years, owing to the significant applications of health monitoring, wearable electronic devices such as smart watches, smart glass and wearable cameras have been growing rapidly. Gas sensor is an important part of wearable electronic devices for detecting pollutant, toxic, and combustible gases. However, in order to apply to wearable electronic devices, the gas sensor needs flexible, transparent, and working at room temperature, which are not available for traditional gas sensors. Here, we for the first time fabricate a light-controlling, flexible, transparent, and working at room-temperature ethanol gas sensor by using commercial ZnO nanoparticles. The fabricated sensor not only exhibits fast and excellent photoresponse, but also shows high sensing response to ethanol under UV irradiation. Meanwhile, its transmittance exceeds 62% in the visible spectral range, and the sensing performance keeps the same even bent it at a curvature angle of 90(o). Additionally, using commercial ZnO nanoparticles provides a facile and low-cost route to fabricate wearable electronic devices.

Quality Evaluation of Agricultural Distillates Using an Electronic Nose

PubMed Central

Dymerski, Tomasz; Gębicki, Jacek; Wardencki, Waldemar; Namieśnik, Jacek

2013-01-01

The paper presents the application of an electronic nose instrument to fast evaluation of agricultural distillates differing in quality. The investigations were carried out using a prototype of electronic nose equipped with a set of six semiconductor sensors by FIGARO Co., an electronic circuit converting signal into digital form and a set of thermostats able to provide gradient temperature characteristics to a gas mixture. A volatile fraction of the agricultural distillate samples differing in quality was obtained by barbotage. Interpretation of the results involved three data analysis techniques: principal component analysis, single-linkage cluster analysis and cluster analysis with spheres method. The investigations prove the usefulness of the presented technique in the quality control of agricultural distillates. Optimum measurements conditions were also defined, including volumetric flow rate of carrier gas (15 L/h), thermostat temperature during the barbotage process (15 °C) and time of sensor signal acquisition from the onset of the barbotage process (60 s). PMID:24287525

LaTiO3/KTaO3 interfaces: A new two-dimensional electron gas system

NASA Astrophysics Data System (ADS)

Zou, K.; Ismail-Beigi, Sohrab; Kisslinger, Kim; Shen, Xuan; Su, Dong; Walker, F. J.; Ahn, C. H.

2015-03-01

We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO3, and a band insulator, KTaO3. For LaTiO3/KTaO3 interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO3-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm2/V s) of SrTiO3 at room temperature. By using KTaO3, we achieve mobilities in LaTiO3/KTaO3 interfaces as high as 21 cm2/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO3. By density functional theory, we attribute the higher mobility in KTaO3 2DEGs to the smaller effective mass for electrons in KTaO3.

Tensile characteristics of metal nanoparticle films on flexible polymer substrates for printed electronics applications.

PubMed

Kim, Sanghyeok; Won, Sejeong; Sim, Gi-Dong; Park, Inkyu; Lee, Soon-Bok

2013-03-01

Metal nanoparticle solutions are widely used for the fabrication of printed electronic devices. The mechanical properties of the solution-processed metal nanoparticle thin films are very important for the robust and reliable operation of printed electronic devices. In this paper, we report the tensile characteristics of silver nanoparticle (Ag NP) thin films on flexible polymer substrates by observing the microstructures and measuring the electrical resistance under tensile strain. The effects of the annealing temperatures and periods of Ag NP thin films on their failure strains are explained with a microstructural investigation. The maximum failure strain for Ag NP thin film was 6.6% after initial sintering at 150 °C for 30 min. Thermal annealing at higher temperatures for longer periods resulted in a reduction of the maximum failure strain, presumably due to higher porosity and larger pore size. We also found that solution-processed Ag NP thin films have lower failure strains than those of electron beam evaporated Ag thin films due to their highly porous film morphologies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferrario, Lorenzo, E-mail: lorenzo.ferrario@polimi.it; Little, Justin M., E-mail: jml@princeton.edu; Choueiri, Edgar Y., E-mail: choueiri@princeton.edu

The plasma flow in a finite-electron-temperature magnetic nozzle, under the influence of an applied azimuthal current at the throat, is modeled analytically to assess its propulsive performance. A correction to the nozzle throat boundary conditions is derived by modifying the radial equilibrium of a magnetized infinite two-population cylindrical plasma column with the insertion of an external azimuthal body force for the electrons. Inclusion of finite-temperature effects, which leads to a modification of the radial density profile, is necessary for calculating the propulsive performance, which is represented by nozzle divergence efficiency and thrust coefficient. The solutions show that the application ofmore » the azimuthal current enhances all the calculated performance parameters through the narrowing of the radial density profile at the throat, and that investing power in this beam focusing effect is more effective than using the same power to pre-heat the electrons. The results open the possibility for the design of a focusing stage between the plasma source and the nozzle that can significantly enhance the propulsive performance of electron-driven magnetic nozzles.« less

Local light-induced magnetization using nanodots and chiral molecules.

PubMed

Dor, Oren Ben; Morali, Noam; Yochelis, Shira; Baczewski, Lech Tomasz; Paltiel, Yossi

2014-11-12

With the increasing demand for miniaturization, nanostructures are likely to become the primary components of future integrated circuits. Different approaches are being pursued toward achieving efficient electronics, among which are spin electronics devices (spintronics). In principle, the application of spintronics should result in reducing the power consumption of electronic devices. Recently a new, promising, effective approach for spintronics has emerged, using spin selectivity in electron transport through chiral molecules. In this work, using chiral molecules and nanocrystals, we achieve local spin-based magnetization generated optically at ambient temperatures. Through the chiral layer, a spin torque can be transferred without permanent charge transfer from the nanocrystals to a thin ferromagnetic layer, creating local perpendicular magnetization. We used Hall sensor configuration and atomic force microscopy (AFM) to measure the induced local magnetization. At low temperatures, anomalous spin Hall effects were measured using a thin Ni layer. The results may lead to optically controlled spintronics logic devices that will enable low power consumption, high density, and cheap fabrication.

Stark width and shift for electron number density diagnostics of low temperature plasma: Application to silicon Laser Induced Breakdown Spectroscopy

NASA Astrophysics Data System (ADS)

Ivković, M.; Konjević, N.

2017-05-01

In this work we summarize, analyze and critically evaluate experimental procedures and results of LIBS electron number density plasma characterization using as examples Stark broadened Si I and Si II line profiles. Selected publications are covering the time period from very beginning of silicon LIBS studies until the end of the year 2015. To perform the analysis of experimental LIBS data, the testing of available semiclassical theoretical Stark broadening parameters for Si I and Si II lines was accomplished first. This is followed by the description of experimental setups, results and details of experimental procedure relevant for the line shape analysis of spectral lines used for plasma characterization. Although most of results and conclusions of this analysis are related to the application of silicon lines for LIBS characterization they are of general importance and may be applied to other elements and different low-temperature plasma sources. The analysis of experimental procedures used for LIBS diagnostics from emission profiles of non-hydrogenic spectral lines is carried out in the following order: the influence of laser ablation and crater formation, spatial and temporal plasma observation, line self-absorption and experimental profile deconvolution, the contribution of ion broadening in comparison with electron impacts contributions to the line width in case of neutral atom line and some other aspects of line shape analysis are considered. The application of Stark shift for LIBS diagnostics is demonstrated and discussed. Finally, the recommendations for an improvement of experimental procedures for LIBS electron number density plasma characterization are offered.

PHEMT as a circuit element for high impedance nanopower amplifiers for ultra-low temperatures application

NASA Astrophysics Data System (ADS)

Korolev, A. M.; Shulga, V. M.; Gritsenko, I. A.; Sheshin, G. A.

2015-04-01

In this work, high electron mobility transistor (HEMT) was studied as a circuit element for amplifiers operating at temperatures of the order of 10-100 mK. To characterize the HEMT, the relative parameters are proposed to be used. HEMT characteristics were measured at a temperature of 50 mK for the first time. It follows from the reported studies that the power consumption of high-impedance HEMT-based amplifiers can be reduced down to hundreds of nanowatt or even lower.

Tuning the Electronic Properties, Effective Mass and Carrier Mobility of MoS2 Monolayer by Strain Engineering: First-Principle Calculations

NASA Astrophysics Data System (ADS)

Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Hieu, Nguyen V.; Thu, Tran V.; Hung, Nguyen M.; Ilyasov, Victor V.; Poklonski, Nikolai A.; Nguyen, Chuong V.

2018-01-01

In this paper, we studied the electronic properties, effective masses, and carrier mobility of monolayer MoS_2 using density functional theory calculations. The carrier mobility was considered by means of ab initio calculations using the Boltzmann transport equation coupled with deformation potential theory. The effects of mechanical biaxial strain on the electronic properties, effective mass, and carrier mobility of monolayer MoS_2 were also investigated. It is demonstrated that the electronic properties, such as band structure and density of state, of monolayer MoS_2 are very sensitive to biaxial strain, leading to a direct-indirect transition in semiconductor monolayer MoS_2. Moreover, we found that the carrier mobility and effective mass can be enhanced significantly by biaxial strain and by lowering temperature. The electron mobility increases over 12 times with a biaxial strain of 10%, while the carrier mobility gradually decreases with increasing temperature. These results are very useful for the future nanotechnology, and they make monolayer MoS_2 a promising candidate for application in nanoelectronic and optoelectronic devices.

Experimental insights on the electron transfer and energy transfer processes between Ce{sup 3+}-Yb{sup 3+} and Ce{sup 3+}-Tb{sup 3+} in borate glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sontakke, Atul D., E-mail: sontakke.atul.55a@st.kyoto-u.ac.jp; Katayama, Yumiko; Tanabe, Setsuhisa

2015-03-30

A facile method to describe the electron transfer and energy transfer processes among lanthanide ions is presented based on the temperature dependent donor luminescence decay kinetics. The electron transfer process in Ce{sup 3+}-Yb{sup 3+} exhibits a steady rise with temperature, whereas the Ce{sup 3+}-Tb{sup 3+} energy transfer remains nearly unaffected. This feature has been investigated using the rate equation modeling and a methodology for the quantitative estimation of interaction parameters is presented. Moreover, the overall consequences of electron transfer and energy transfer process on donor-acceptor luminescence behavior, quantum efficiency, and donor luminescence decay kinetics are discussed in borate glass host.more » The results in this study propose a straight forward approach to distinguish the electron transfer and energy transfer processes between lanthanide ions in dielectric hosts, which is highly advantageous in view of the recent developments on lanthanide doped materials for spectral conversion, persistent luminescence, and related applications.« less

Microstructural stability and mechanical behavior of FeNiMnCr high entropy alloy under ion irradiation

DOE PAGES

Leonard, Keith J.; Bei, Hongbin; Zinkle, Steven J.; ...

2016-05-13

In recent years, high entropy alloys (HEAs) have attracted significant attention due to their excellent mechanical properties and good corrosion resistance, making them potential candidates for high temperature fission and fusion structural applications. However there is very little known about their radiation resistance, particularly at elevated temperatures relevant for energy applications. In the present study, a single phase (face centered cubic) concentrated solid solution alloy of composition 27%Fe-28%Ni-27%Mn-18%Cr was irradiated with 3 or 5.8 MeV Ni ions at temperatures ranging from room temperature to 700 °C and midrange doses from 0.03 to 10 displacements per atom (dpa). Transmission electron microscopymore » (TEM), scanning transmission electron microscopy with energy dispersive x-ray spectrometry (STEM/EDS) and X-ray diffraction (XRD) were used to characterize the radiation defects and microstructural changes. Irradiation at higher temperatures showed evidence of relatively sluggish solute diffusion with limited solute depletion or enrichment at grain boundaries. The main microstructural feature at all temperatures was high-density small dislocation loops. Voids were not observed at any irradiation condition. Nano-indentation tests on specimens irradiated at room temperature showed a rapid increase in hardness ~35% and ~80% higher than the unirradiated value at 0.03 and 0.3 dpa midrange doses, respectively. The irradiation-induced hardening was less pronounced for 500 °C irradiations (<20% increase after 3 dpa). Overall, the examined HEA material exhibits superior radiation resistance compared to conventional single phase Fe-Cr-Ni austenitic alloys such as stainless steels. Furthermore, the present study provides insight on the fundamental irradiation behavior of a single phase HEA material over a broad range of irradiation temperatures.« less

Synthesis of Nanocrystalline CaWO4 as Low-Temperature Co-fired Ceramic Material: Processing, Structural and Physical Properties

NASA Astrophysics Data System (ADS)

Vidya, S.; Solomon, Sam; Thomas, J. K.

2013-01-01

Nanocrystalline scheelite CaWO4, a promising material for low-temperature co-fired ceramic (LTCC) applications, has been successfully synthesized through a single-step autoignition combustion route. Structural analysis of the sample was performed by powder x-ray diffraction (XRD), Fourier-transform infrared spectroscopy, and Raman spectroscopy. The XRD analysis revealed that the as-prepared sample was single phase with scheelite tetragonal structure. The basic optical properties and optical constants of the CaWO4 nanopowder were studied using ultraviolet (UV)-visible absorption spectroscopy, which showed that the material was a wide-bandgap semiconductor with bandgap of 4.7 eV at room temperature. The sample showed poor transmittance in the ultraviolet region but maximum transmission in the visible/near-infrared regions. The photoluminescence spectra recorded at different temperatures showed intense emission in the green region. The particle size estimated from transmission electron microscopy was 23 nm. The feasibility of CaWO4 for LTCC applications was studied from its sintering behavior. The sample was sintered at a relatively low temperature of 810°C to high density, without using any sintering aid. The surface morphology of the sintered sample was analyzed by scanning electron microscopy. The dielectric constant and loss factor of the sample measured at 5 MHz were found to be 10.50 and 1.56 × 10-3 at room temperature. The temperature coefficient of the dielectric constant was -88.71 ppm/°C. The experimental results obtained in this work demonstrate the potential of nano-CaWO4 as a low-temperature co-fired ceramic as well as an excellent luminescent material.

Laser ablated high T(sub c) superconducting thin YBa2Cu3O(7-x) films on substrates suitable for microwave applications

NASA Astrophysics Data System (ADS)

Warner, J. D.; Meola, J. E.; Jenkins, K. A.; Bhasin, K. B.

1990-04-01

The development of high temperature superconducting YBa2Cu3O(7-x) thin films on substrates suitable for microwave applications is of great interest for evaluating their applications for space radar, communication, and sensor systems. Thin films of YBa2Cu3O(7-x) were formed on SrTiO3, ZrO2, MgO, and LaAlO3 substrates by laser ablation. The wavelength used was 248 nm from a KrF excimer laser. During deposition the films were heated to 600 C in a flowing oxygen environment, and required no post annealing. The low substrate temperature during deposition with no post annealing gave films which were smooth, which had their c-axis aligned to the substrates, and which had grains ranging from 0.2 to 0.5 microns in size. The films being c-axis aligned gave excellent surface resistance at 35 GHz which was lower than that of copper at 77 K. At present, LaAlO3 substrates with a dielectric constant of 22, appears suitable as a substrate for microwave and electronic applications. The films were characterized by resistance-temperature measurements, scanning electron microscopy, and x ray diffraction. The highest critical transition temperatures (T sub c) are above 89 K for films on SrTiO3 and LaAlO3, above 88 K for ZrO2, and above 86 K for MgO. The critical current density (J sub c) of the films on SrTiO3 is above 2 x 10(exp 6) amperes/sq cm at 77 K. The T(sub c) and J(sub c) are reported as a function of laser power, composition of the substrate, and temperature of the substrate during deposition.

Bio-integrated electronics and sensor systems

NASA Astrophysics Data System (ADS)

Yeo, Woon-Hong; Webb, R. Chad; Lee, Woosik; Jung, Sungyoung; Rogers, John A.

2013-05-01

Skin-mounted epidermal electronics, a strategy for bio-integrated electronics, provide an avenue to non-invasive monitoring of clinically relevant physiological signals for healthcare applications. Current conventional systems consist of single-point sensors fastened to the skin with adhesives, and sometimes with conducting gels, which limits their use outside of clinical settings due to loss of adhesion and irritation to the user. In order to facilitate extended use of skin-mounted healthcare sensors without disrupting everyday life, we envision electronic monitoring systems that integrate seamlessly with the skin below the notice of the user. This manuscript reviews recent significant results towards our goal of wearable electronic sensor systems for long-term monitoring of physiological signals. Ultra-thin epidermal electronic systems (EES) are demonstrated for extended use on the skin, in a conformal manner, including during everyday bathing and sleeping activities. We describe the assessment of clinically relevant physiological parameters, such as electrocardiograms (ECG), electromyograms (EMG), electroencephalograms (EEG), temperature, mechanical strain and thermal conductivity, using examples of multifunctional EES devices. Additionally, we demonstrate capability for real life application of EES by monitoring the system functionality, which has no discernible change, during cyclic fatigue testing.

Spin-lattice relaxation of individual solid-state spins

NASA Astrophysics Data System (ADS)

Norambuena, A.; Muñoz, E.; Dinani, H. T.; Jarmola, A.; Maletinsky, P.; Budker, D.; Maze, J. R.

2018-03-01

Understanding the effect of vibrations on the relaxation process of individual spins is crucial for implementing nanosystems for quantum information and quantum metrology applications. In this work, we present a theoretical microscopic model to describe the spin-lattice relaxation of individual electronic spins associated to negatively charged nitrogen-vacancy centers in diamond, although our results can be extended to other spin-boson systems. Starting from a general spin-lattice interaction Hamiltonian, we provide a detailed description and solution of the quantum master equation of an electronic spin-one system coupled to a phononic bath in thermal equilibrium. Special attention is given to the dynamics of one-phonon processes below 1 K where our results agree with recent experimental findings and analytically describe the temperature and magnetic-field scaling. At higher temperatures, linear and second-order terms in the interaction Hamiltonian are considered and the temperature scaling is discussed for acoustic and quasilocalized phonons when appropriate. Our results, in addition to confirming a T5 temperature dependence of the longitudinal relaxation rate at higher temperatures, in agreement with experimental observations, provide a theoretical background for modeling the spin-lattice relaxation at a wide range of temperatures where different temperature scalings might be expected.

Cooperative inter- and intra-layer lattice dynamics of photoexcited multi-walled carbon nanotubes studied by ultrafast electron diffraction.

PubMed

Sun, Shuaishuai; Li, Zhongwen; Li, Zi-An; Xiao, Ruijuan; Zhang, Ming; Tian, Huanfang; Yang, Huaixin; Li, Jianqi

2018-04-26

Optical tuning and probing ultrafast structural response of nanomaterials driven by electronic excitation constitute a challenging but promising approach for understanding microscopic mechanisms and applications in microelectromechanical systems and optoelectrical devices. Here we use pulsed electron diffraction in a transmission electron microscope to investigate laser-induced tubular lattice dynamics of multi-walled carbon nanotubes (MWCNTs) with varying laser fluence and initial specimen temperature. Our photoexcitation experiments demonstrate cooperative and inverse collective atomic motions in intralayer and interlayer directions, whose strengths and rates depend on pump fluence. The electron-driven and thermally driven structural responses with opposite amplitudes cause a crossover between intralayer and interlayer directions. Our ab initio calculations support these findings and reveal that electrons excited from π to π* orbitals in a carbon tube weaken the intralayer bonds while strengthening the interlayer bonds along the radial direction. Moreover, by probing the structural dynamics of MWCNTs at initial temperatures of 300 and 100 K, we uncover the concomitance of thermal and nonthermal dynamical processes and their mutual influence in MWCNTs. Our results illustrate the nature of electron-driven nonthermal process and electron-phonon thermalization in the MWCNTs, and bear implications for the intricate energy conversion and transfer in materials at the nanoscale.

Tractable flux-driven temperature, density, and rotation profile evolution with the quasilinear gyrokinetic transport model QuaLiKiz

NASA Astrophysics Data System (ADS)

Citrin, J.; Bourdelle, C.; Casson, F. J.; Angioni, C.; Bonanomi, N.; Camenen, Y.; Garbet, X.; Garzotti, L.; Görler, T.; Gürcan, O.; Koechl, F.; Imbeaux, F.; Linder, O.; van de Plassche, K.; Strand, P.; Szepesi, G.; Contributors, JET

2017-12-01

Quasilinear turbulent transport models are a successful tool for prediction of core tokamak plasma profiles in many regimes. Their success hinges on the reproduction of local nonlinear gyrokinetic fluxes. We focus on significant progress in the quasilinear gyrokinetic transport model QuaLiKiz (Bourdelle et al 2016 Plasma Phys. Control. Fusion 58 014036), which employs an approximated solution of the mode structures to significantly speed up computation time compared to full linear gyrokinetic solvers. Optimisation of the dispersion relation solution algorithm within integrated modelling applications leads to flux calculations × {10}6-7 faster than local nonlinear simulations. This allows tractable simulation of flux-driven dynamic profile evolution including all transport channels: ion and electron heat, main particles, impurities, and momentum. Furthermore, QuaLiKiz now includes the impact of rotation and temperature anisotropy induced poloidal asymmetry on heavy impurity transport, important for W-transport applications. Application within the JETTO integrated modelling code results in 1 s of JET plasma simulation within 10 h using 10 CPUs. Simultaneous predictions of core density, temperature, and toroidal rotation profiles for both JET hybrid and baseline experiments are presented, covering both ion and electron turbulence scales. The simulations are successfully compared to measured profiles, with agreement mostly in the 5%-25% range according to standard figures of merit. QuaLiKiz is now open source and available at www.qualikiz.com.

Pyrolytic synthesis and characterization of N-doped carbon nanoflakes for electrochemical applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Savilov, S.V., E-mail: savilov@chem.msu.ru; N.S. Kurnakov Institute of General and Inorganic Chemistry Of Russian Academy of Sciences, Leninsky avenue, 31, Moscow 119991; Arkhipova, E.A.

2015-09-15

Highlights: • Carbon nanoflakes doped with nitrogen were produced by a pyrolytic technique. • Quarternary, pyrrolic and pyridinic types of nitrogen are confirmed by XPS. • Nitrogen content depends on precursor used and temperature processed. • Specific surface area values decrease with increasing of synthesis duration. • N-doped carbon nanoflakes may be suitable for electrochemical applications. - Abstract: Nitrogen doped carbon nanoflakes, which are very important for many electrochemical applications, were synthesized by pyrolysis of nitrogen containing organic compounds over metal oxide template. Acetonitrile, pyridine and butylamine, which are of different volatility were tested as N-containing precursors. Morphology, structure andmore » chemical composition of the as-synthesized materials were investigated by scanning electron microscopy (SEM), high resolution transmission electron microscopy (TEM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). It was found that materials are highly defective and consist of a few malformed graphene layers. X-ray photoelectron spectra reflect the dominant graphitic and pyridinic N-bonding configuration. It was also noted that specific surface area depends on the duration and temperature of the reaction. Increase in duration and temperature led to decrease of the specific surface area from 1000 to 160 m{sup 2}/g, 1170 to 210 m{sup 2}/g and 1180 to 480 m{sup 2}/g for acetonitrile, butylamine and pyridine precursors, respectively.« less

Addressing Rare-Earth Element Criticality: An Example from the Aviation Industry

NASA Astrophysics Data System (ADS)

Ku, Anthony Y.; Dosch, Christopher; Grossman, Theodore R.; Herzog, Joseph L.; Maricocchi, Antonio F.; Polli, Drew; Lipkin, Don M.

2014-11-01

Rare-earth (RE) elements are enablers for a wide range of technologies, including high-strength permanent magnets, energy-efficient lighting, high-temperature thermal barrier coatings, and catalysts. While direct material substitution is difficult in many of these applications because of the specific electronic, optical, or electrochemical properties imparted by the individual rare-earth elements, we describe an example from the aviation industry where supply chain optimization may be an option. Ceramic matrix composite engine components require environmental barrier coatings (EBCs) to protect them from extreme temperatures and adverse reactions with water vapor in the hot gas path. EBC systems based on rare-earth silicates offer a unique combination of environmental resistance, thermal expansion matching, thermal conductivity, and thermal stability across the service temperature window. Several pure rare-earth silicates and solid solutions have been demonstrated in EBC applications. However, all rely on heavy rare-earth elements (HREEs) for phase stability. This article considers the possibility of using separation tailings containing a mixture of HREEs as a source material in lieu of using the high-purity HREE oxides. This option arises because the desired properties of RE-silicate EBCs derive from the average cation size rather than the electronic properties of the individual rare-earth cations. Because separation tailings have not incurred the costs associated with the final stages of separation, they offer an economical alternative to high-purity oxides for this emerging application.

High temperature adhesives

NASA Technical Reports Server (NTRS)

St.clair, Terry L.

1991-01-01

The aerospace and electronics industries have an ever increasing need for higher performance materials. In recent years, linear aromatic polyimides have been proven to be a superior class of materials for various applications in these industries. The use of this class of polymers as adhesives is continuing to increase. Several NASA Langley developed polyimides show considerable promise as adhesives because of their high glass transition temperatures, thermal stability, resistance to solvents/water, and their potential for cost effective manufacture.

Spray-Deposited Superconductor/Polymer Coatings

NASA Technical Reports Server (NTRS)

Wise, Stephanie A.; Tran, Sang Q.; Hooker, Matthew W.

1993-01-01

Coatings that exhibit the Meissner effect formed at relatively low temperature. High-temperature-superconductor/polymer coatings that exhibit Meissner effect deposited onto components in variety of shapes and materials. Simple, readily available equipment needed in coating process, mean coatings produced economically. Coatings used to keep magnetic fields away from electronic circuits in such cryogenic applications as magnetic resonance imaging and detection of infrared, and in magnetic suspensions to provide levitation and/or damping of vibrations.

Characterization of solar cells for space applications. Volume 14: Electrical characteristics of Hughes liquid phase epitaxy gallium arsenide solar cells as a function of intensity, temperature and irradiation

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Downing, R. G.; Miyahira, T. F.; Weiss, R. S.

1981-01-01

Electrical characteristics of liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. The solar cells were exposed to 1 MeV electron fluences of, respectively, 0, one hundred trillion, one quadrillion, and ten quadrillion e/sq cm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Gian; Sun, Zhiqian; Li, Lin

There have been numerous efforts to develop creep-resistant materials strengthened by incoherent particles at high temperatures and stresses in response to future energy needs for steam turbines in thermal-power plants. However, the microstructural instability of the incoherent-particle-strengthened ferritic steels limits their application to temperatures below 900 K. Here, we report a novel ferritic alloy with the excellent creep resistance enhanced by coherent hierarchical precipitates, using the integrated experimental (transmission-electron microscopy/scanning-transmission-electron microscopy, in-situ neutron diffraction, and atom-probe tomography) and theoretical (crystal-plasticity finite-element modeling) approaches. This alloy is strengthened by nano-scaled L21-Ni2TiAl (Heusler phase)-based precipitates, which themselves contain coherent nano-scaled B2 zones.more » These coherent hierarchical precipitates are uniformly distributed within the Fe matrix. Our hierarchical structure material exhibits the superior creep resistance at 973 K in terms of the minimal creep rate, which is four orders of magnitude lower than that of conventional ferritic steels. These results provide a new alloy-design strategy using the novel concept of hierarchical precipitates and the fundamental science for developing creep-resistant ferritic alloys. Finally, the present research will broaden the applications of ferritic alloys to higher temperatures.« less

Interface engineered ferrite@ferroelectric core-shell nanostructures: A facile approach to impart superior magneto-electric coupling

NASA Astrophysics Data System (ADS)

Abraham, Ann Rose; Raneesh, B.; Das, Dipankar; Oluwafemi, Oluwatobi Samuel; Thomas, Sabu; Kalarikkal, Nandakumar

2018-04-01

The electric field control of magnetism in multiferroics is attractive for the realization of ultra-fast and miniaturized low power device applications like nonvolatile memories. Room temperature hybrid multiferroic heterostructures with core-shell (0-0) architecture (ferrite core and ferroelectric shell) were developed via a two-step method. High-Resolution Transmission Electron Microscopy (HRTEM) images confirm the core-shell structure. The temperature dependant magnetization measurements and Mossbauer spectra reveal superparamagnetic nature of the core-shell sample. The ferroelectric hysteresis loops reveal leaky nature of the samples. The results indicate the promising applications of the samples for magneto-electric memories and spintronics.

Down- and up-conversion luminescent carbon dot fluid: inkjet printing and gel glass fabrication

NASA Astrophysics Data System (ADS)

Wang, Fu; Xie, Zheng; Zhang, Bing; Liu, Yun; Yang, Wendong; Liu, Chun-Yan

2014-03-01

Room temperature liquid-like nanoparticles have emerged as an exciting new research and development area, because their properties could be tailored over a broad range by manipulating geometric and chemical characteristics of the inorganic core and organic canopy. However, related applications are rarely reported due to the multi-step synthesis process and potential toxicity of cadmium based nanomaterials. In this study, we prepared inexpensive and eco-friendly carbon dot fluid by the direct thermal decomposition method. The carbon dot fluid can be excited from UV to near infrared light, and can be prepared as highly concentrated luminescent ink or incorporated into sol-gel derived organically modified silicate glass, suggesting that it has great application potential in the field of printable electronics, solid state lighting and so on.Room temperature liquid-like nanoparticles have emerged as an exciting new research and development area, because their properties could be tailored over a broad range by manipulating geometric and chemical characteristics of the inorganic core and organic canopy. However, related applications are rarely reported due to the multi-step synthesis process and potential toxicity of cadmium based nanomaterials. In this study, we prepared inexpensive and eco-friendly carbon dot fluid by the direct thermal decomposition method. The carbon dot fluid can be excited from UV to near infrared light, and can be prepared as highly concentrated luminescent ink or incorporated into sol-gel derived organically modified silicate glass, suggesting that it has great application potential in the field of printable electronics, solid state lighting and so on. Electronic supplementary information (ESI) available: Details of FTIR, XRD and DLS of CDF, optical properties of CDF, TEM images of other obtained products, luminescent spectra of CDF at different temperatures, and the optical photographs of CDF inks and silica glasses with different concentrations under normal, UV and 800 nm light. See DOI: 10.1039/c3nr05869g

The monolithic carbon aerogels and aerogel composites for electronics and thermal protection applications

NASA Astrophysics Data System (ADS)

Lu, Sheng; Guo, Hui; Zhou, Yugui; Liu, Yuanyuan; Jin, Zhaoguo; Liu, Bin; Zhao, Yingmin

2017-09-01

Monolithic carbon aerogels have been prepared by condensation polymerization and high temperature pyrolysis. The morphology of carbon aerogels are characterized by SEM. The pore structure is characterized by N2 adsorption-desorption technique. Monolithic carbon aerogels are mesoporous nanomaterials. Carbon fiber reinforced carbon aerogel composites are prepared by in-situ sol-gel process. Fiber reinforced carbon aerogel composites are of high mechanical strength. The thermal response of the fiber reinforced aerogel composite samples are tested in an arc plasma wind tunnel. Carbon aerogel composites show good thermal insulation capability and high temperature resistance in inert atmosphere even at ultrahigh temperature up to 1800 °C. The results show that they are suitable for applications in electrodes for supercapacitors/ Lithium-ion batteries and aerospace thermal protection area.

Reliability Assessment of Advanced Flip-clip Interconnect Electronic Package Assemblies under Extreme Cold Temperatures (-190 and -120 C)

NASA Technical Reports Server (NTRS)

Ramesham, Rajeshuni; Ghaffarian, Reza; Shapiro, Andrew; Napala, Phil A.; Martin, Patrick A.

2005-01-01

Flip-chip interconnect electronic package boards have been assembled, underfilled, non-destructively evaluated and subsequently subjected to extreme temperature thermal cycling to assess the reliability of this advanced packaging interconnect technology for future deep space, long-term, extreme temperature missions. In this very preliminary study, the employed temperature range covers military specifications (-55 C to 100 C), extreme cold Martian (-120 C to 115 C) and asteroid Nereus (-180 C to 25 C) environments. The resistance of daisy-chained, flip-chip interconnects were measured at room temperature and at various intervals as a function of extreme temperature thermal cycling. Electrical resistance measurements are reported and the tests to date have not shown significant change in resistance as a function of extreme temperature thermal cycling. However, the change in interconnect resistance becomes more noticeable with increasing number of thermal cycles. Further research work has been carried out to understand the reliability of flip-chip interconnect packages under extreme temperature applications (-190 C to 85 C) via continuously monitoring the daisy chain resistance. Adaptation of suitable diagnostic techniques to identify the failure mechanisms is in progress. This presentation will describe the experimental test results of flip-chip testing under extreme temperatures.

Numerical simulation of inducing characteristics of high energy electron beam plasma for aerodynamics applications

NASA Astrophysics Data System (ADS)

Deng, Yongfeng; Jiang, Jian; Han, Xianwei; Tan, Chang; Wei, Jianguo

2017-04-01

The problem of flow active control by low temperature plasma is considered to be one of the most flourishing fields of aerodynamics due to its practical advantages. Compared with other means, the electron beam plasma is a potential flow control method for large scale flow. In this paper, a computational fluid dynamics model coupled with a multi-fluid plasma model is established to investigate the aerodynamic characteristics induced by electron beam plasma. The results demonstrate that the electron beam strongly influences the flow properties, not only in the boundary layers, but also in the main flow. A weak shockwave is induced at the electron beam injection position and develops to the other side of the wind tunnel behind the beam. It brings additional energy into air, and the inducing characteristics are closely related to the beam power and increase nonlinearly with it. The injection angles also influence the flow properties to some extent. Based on this research, we demonstrate that the high energy electron beam air plasma has three attractive advantages in aerodynamic applications, i.e. the high energy density, wide action range and excellent action effect. Due to the rapid development of near space hypersonic vehicles and atmospheric fighters, by optimizing the parameters, the electron beam can be used as an alternative means in aerodynamic steering in these applications.

Conceptual Design of Electron-Beam Generated Plasma Tools

NASA Astrophysics Data System (ADS)

Agarwal, Ankur; Rauf, Shahid; Dorf, Leonid; Collins, Ken; Boris, David; Walton, Scott

2015-09-01

Realization of the next generation of high-density nanostructured devices is predicated on etching features with atomic layer resolution, no damage and high selectivity. High energy electron beams generate plasmas with unique features that make them attractive for applications requiring monolayer precision. In these plasmas, high energy beam electrons ionize the background gas and the resultant daughter electrons cool to low temperatures via collisions with gas molecules and lack of any accelerating fields. For example, an electron temperature of <0.6 eV with densities comparable to conventional plasma sources can be obtained in molecular gases. The chemistry in such plasmas can significantly differ from RF plasmas as the ions/radicals are produced primarily by beam electrons rather than those in the tail of a low energy distribution. In this work, we will discuss the conceptual design of an electron beam based plasma processing system. Plasma properties will be discussed for Ar, Ar/N2, and O2 plasmas using a computational plasma model, and comparisons made to experiments. The fluid plasma model is coupled to a Monte Carlo kinetic model for beam electrons which considers gas phase collisions and the effect of electric and magnetic fields on electron motion. The impact of critical operating parameters such as magnetic field, beam energy, and gas pressure on plasma characteristics in electron-beam plasma processing systems will be discussed. Partially supported by the NRL base program.

Observation of stable Néel skyrmions in cobalt/palladium multilayers with Lorentz transmission electron microscopy

DOE PAGES

Pollard, Shawn D.; Garlow, Joseph A.; Yu, Jiawei; ...

2017-03-10

Néel skyrmions are of high interest due to their potential applications in a variety of spintronic devices, currently accessible in ultrathin heavy metal/ferromagnetic bilayers and multilayers with a strong Dzyaloshinskii–Moriya interaction. Here in this paper we report on the direct imaging of chiral spin structures including skyrmions in an exchange-coupled cobalt/palladium multilayer at room temperature with Lorentz transmission electron microscopy, a high-resolution technique previously suggested to exhibit no Néel skyrmion contrast. Phase retrieval methods allow us to map the internal spin structure of the skyrmion core, identifying a 25 nm central region of uniform magnetization followed by a larger regionmore » characterized by rotation from in- to out-of-plane. The formation and resolution of the internal spin structure of room temperature skyrmions without a stabilizing out-of-plane field in thick magnetic multilayers opens up a new set of tools and materials to study the physics and device applications associated with chiral ordering and skyrmions.« less

Modeling and fabrication of 4H-SiC Schottky junction

NASA Astrophysics Data System (ADS)

Martychowiec, A.; Pedryc, A.; Kociubiński, A.

2017-08-01

The rapidly growing demand for electronic devices requires using of alternative semiconductor materials, which could replace conventional silicon. Silicon carbide has been proposed for these harsh environment applications (high temperature, high voltage, high power conditions) because of its wide bandgap, its high temperature operation ability, its excellent thermal and chemical stability, and its high breakdown electric field strength. The Schottky barrier diode (SBD) is known as one of the best refined SiC devices. This paper presents prepared model, simulations and description of technology of 4H-SiC Schottky junction as well as characterization of fabricated structures. The future aim of the application of the structures is an optical detection of an ultraviolet radiation. The model section contains a comparison of two different solutions of SBD's construction. Simulations - as a crucial process of designing electronic devices - have been performed using the ATLAS device of Silvaco TCAD software. As a final result the paper shows I-V characteristics of fabricated diodes.

Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

NASA Astrophysics Data System (ADS)

Ghoneim, M. T.; Hussain, M. M.

2015-08-01

Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ˜260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.

Electronic transport in pure and doped UO2

NASA Astrophysics Data System (ADS)

Massih, A. R.

2017-12-01

The thermoelectric properties of pure and doped UO2, namely the thermal and electrical conductivities and the thermopower, are assessed. We adopt the small polaron theory of the Mott type insulators, wherein the charge carriers, the electron and hole on the U3+ and U5+ ions, are treated as small polarons. For the thermal conductivity, the small polaron theory is applicable at temperatures above 1500 K. A review of the experimental data on the temperature dependence of the aforementioned transport properties is made. The data include UO2 with dopants such as Cr2O3, Gd2O3, Y2O3 and Nb2O5. We compare the applications of the theory with the data. Two limiting regimes, adiabatic and nonadiabatic, with the ensuing expressions for the conductivities and the thermoelectric power are considered. We discuss both the merits and shortcomings of the putative small polaron model and the simplification thereof as applied to pure and doped uranium dioxide.

Epidermal photonic devices for quantitative imaging of temperature and thermal transport characteristics of the skin

NASA Astrophysics Data System (ADS)

Gao, Li; Zhang, Yihui; Malyarchuk, Viktor; Jia, Lin; Jang, Kyung-In; Chad Webb, R.; Fu, Haoran; Shi, Yan; Zhou, Guoyan; Shi, Luke; Shah, Deesha; Huang, Xian; Xu, Baoxing; Yu, Cunjiang; Huang, Yonggang; Rogers, John A.

2014-09-01

Characterization of temperature and thermal transport properties of the skin can yield important information of relevance to both clinical medicine and basic research in skin physiology. Here we introduce an ultrathin, compliant skin-like, or ‘epidermal’, photonic device that combines colorimetric temperature indicators with wireless stretchable electronics for thermal measurements when softly laminated on the skin surface. The sensors exploit thermochromic liquid crystals patterned into large-scale, pixelated arrays on thin elastomeric substrates; the electronics provide means for controlled, local heating by radio frequency signals. Algorithms for extracting patterns of colour recorded from these devices with a digital camera and computational tools for relating the results to underlying thermal processes near the skin surface lend quantitative value to the resulting data. Application examples include non-invasive spatial mapping of skin temperature with milli-Kelvin precision (±50 mK) and sub-millimetre spatial resolution. Demonstrations in reactive hyperaemia assessments of blood flow and hydration analysis establish relevance to cardiovascular health and skin care, respectively.

Wireless energizing system for an automated implantable sensor.

PubMed

Swain, Biswaranjan; Nayak, Praveen P; Kar, Durga P; Bhuyan, Satyanarayan; Mishra, Laxmi P

2016-07-01

The wireless drive of an automated implantable electronic sensor has been explored for health monitoring applications. The proposed system comprises of an automated biomedical sensing system which is energized through resonant inductive coupling. The implantable sensor unit is able to monitor the body temperature parameter and sends back the corresponding telemetry data wirelessly to the data recoding unit. It has been observed that the wireless power delivery system is capable of energizing the automated biomedical implantable electronic sensor placed over a distance of 3 cm from the power transmitter with an energy transfer efficiency of 26% at the operating resonant frequency of 562 kHz. This proposed method ensures real-time monitoring of different human body temperatures around the clock. The monitored temperature data have been compared with a calibrated temperature measurement system to ascertain the accuracy of the proposed system. The investigated technique can also be useful for monitoring other body parameters such as blood pressure, bladder pressure, and physiological signals of the patient in vivo using various implantable sensors.

Epidermal photonic devices for quantitative imaging of temperature and thermal transport characteristics of the skin.

PubMed

Gao, Li; Zhang, Yihui; Malyarchuk, Viktor; Jia, Lin; Jang, Kyung-In; Webb, R Chad; Fu, Haoran; Shi, Yan; Zhou, Guoyan; Shi, Luke; Shah, Deesha; Huang, Xian; Xu, Baoxing; Yu, Cunjiang; Huang, Yonggang; Rogers, John A

2014-09-19

Characterization of temperature and thermal transport properties of the skin can yield important information of relevance to both clinical medicine and basic research in skin physiology. Here we introduce an ultrathin, compliant skin-like, or 'epidermal', photonic device that combines colorimetric temperature indicators with wireless stretchable electronics for thermal measurements when softly laminated on the skin surface. The sensors exploit thermochromic liquid crystals patterned into large-scale, pixelated arrays on thin elastomeric substrates; the electronics provide means for controlled, local heating by radio frequency signals. Algorithms for extracting patterns of colour recorded from these devices with a digital camera and computational tools for relating the results to underlying thermal processes near the skin surface lend quantitative value to the resulting data. Application examples include non-invasive spatial mapping of skin temperature with milli-Kelvin precision (±50 mK) and sub-millimetre spatial resolution. Demonstrations in reactive hyperaemia assessments of blood flow and hydration analysis establish relevance to cardiovascular health and skin care, respectively.

Observing electron spin resonance between 0.1 and 67 GHz at temperatures between 50 mK and 300 K using broadband metallic coplanar waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiemann, Yvonne; Simmendinger, Julian; Clauss, Conrad

2015-05-11

We describe a fully broadband approach for electron spin resonance (ESR) experiments, where it is possible to tune not only the magnetic field but also the frequency continuously over wide ranges. Here, a metallic coplanar transmission line acts as compact and versatile microwave probe that can easily be implemented in different cryogenic setups. We perform ESR measurements at frequencies between 0.1 and 67 GHz and at temperatures between 50 mK and room temperature. Three different types of samples (Cr{sup 3+} ions in ruby, organic radicals of the nitronyl-nitroxide family, and the doped semiconductor Si:P) represent different possible fields of application formore » the technique. We demonstrate that an extremely large phase space in temperature, magnetic field, and frequency for ESR measurements, substantially exceeding the range of conventional ESR setups, is accessible with metallic coplanar lines.« less

Strain-engineering stabilization of BaTi O3 -based polar metals

NASA Astrophysics Data System (ADS)

Ma, Chao; Jin, Kui-juan; Ge, Chen; Yang, Guo-zhen

2018-03-01

Polar metals, which possess ferroelectriclike polar structure and conductivity simultaneously, have attracted wide interest since the first solid example, LiOs O3 (below 140 K), was discovered. However, the lack of room-temperature polar metals hinders further research and applications. Thus abundant properties of polar metals are unexplored. Here, with first-principles calculations, we report that the polar metal phase can be stabilized in the strain-engineered BaTi O3 with electron doping. The mechanism relates to the competition between the shifting of the t2 g energy levels and the narrowing of their bandwidth. Surprisingly, it is predicted that the ferroelectric-to-paraelectric transition temperature can be increased by electron doping when the strain is large enough, which holds potential for room-temperature polar metals. Our results indicate that strain engineering is a promising way to achieve BaTi O3 -based polar metals, and they should have practical significance for obtaining easily accessible, ecofriendly, and potential room-temperature polar metals.

A Fully Transparent Flexible Sensor for Cryogenic Temperatures Based on High Strength Metallurgical Graphene.

PubMed

Pawlak, Ryszard; Lebioda, Marcin; Rymaszewski, Jacek; Szymanski, Witold; Kolodziejczyk, Lukasz; Kula, Piotr

2016-12-28

Low-temperature electronics operating in below zero temperatures or even below the lower limit of the common -65 to 125 °C temperature range are essential in medical diagnostics, in space exploration and aviation, in processing and storage of food and mainly in scientific research, like superconducting materials engineering and their applications-superconducting magnets, superconducting energy storage, and magnetic levitation systems. Such electronic devices demand special approach to the materials used in passive elements and sensors. The main goal of this work was the implementation of a fully transparent, flexible cryogenic temperature sensor with graphene structures as sensing element. Electrodes were made of transparent ITO (Indium Tin Oxide) or ITO/Ag/ITO conductive layers by laser ablation and finally encapsulated in a polymer coating. A helium closed-cycle cryostat has been used in measurements of the electrical properties of these graphene-based temperature sensors under cryogenic conditions. The sensors were repeatedly cooled from room temperature to cryogenic temperature. Graphene structures were characterized using Raman spectroscopy. The observation of the resistance changes as a function of temperature indicates the potential use of graphene layers in the construction of temperature sensors. The temperature characteristics of the analyzed graphene sensors exhibit no clear anomalies or strong non-linearity in the entire studied temperature range (as compared to the typical carbon sensor).

Bending fatigue of electron-beam-welded foils. Application to a hydrodynamic air bearing in the Chrysler/DOE upgraded automotive gas tubine engine

NASA Technical Reports Server (NTRS)

Saltsman, J. F.; Halford, G. R.

1984-01-01

A hydrodynamic air bearing with a compliment surface is used in the gas generator of an upgraded automotive gas turbine engine. In the prototype design, the compliant surface is a thin foil spot welded at one end to the bearing cartridge. During operation, the foil failed along the line of spot welds which acted as a series of stress concentrators. Because of its higher degree of geometric uniformity, electron beam welding of the foil was selected as an alternative to spot welding. Room temperature bending fatigue tests were conducted to determine the fatigue resistance of the electron beam welded foils. Equations were determined relating cycles to crack initiation and cycles to failure to nominal total strain range. A scaling procedure is presented for estimating the reduction in cyclic life when the foil is at its normal operating temperature of 260 C (500 F).

Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications

PubMed Central

2013-01-01

Pt nanodots have been grown on Al2O3 film via atomic layer deposition (ALD) using (MeCp)Pt(Me)3 and O2 precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)3, and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. Therefore, Pt nanodots with a high density of approximately 2 × 1012 cm-2 have been achieved under optimized conditions: 300°C substrate temperature, 1 s pulse time of (MeCp)Pt(Me)3, and 70 deposition cycles. Further, metal-oxide-semiconductor capacitors with Pt nanodots embedded in ALD Al2O3 dielectric have been fabricated and characterized electrically, indicating noticeable electron trapping capacity, efficient programmable and erasable characteristics, and good charge retention. PMID:23413837

A hydrothermally synthesized LiFePO4/C composite with superior low-temperature performance and cycle life

NASA Astrophysics Data System (ADS)

Wu, Guan; Liu, Na; Gao, Xuguang; Tian, Xiaohui; Zhu, Yanbin; Zhou, Yingke; Zhu, Qingyou

2018-03-01

The LiFePO4/C composites have been successfully synthesized by a hydrothermal process, with the combined carbon sources of fructose and calcium lignosulfonate. The morphology and microstructure of LiFePO4/C were investigated by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and Fourier transform infrared spectroscopy. The electrochemical properties were evaluated by the constant-current charge/discharge tests, cyclic voltammetry and electrochemical impedance spectroscopy. The uniform carbon coating layer derived from calcium lignosulfonate can effectively improve the electronic conductivity, lithium-ion diffusivity and surface stability of the LiFePO4/C composites and prevent the side reactions between the LiFePO4 particles and electrolytes. The LiFePO4/C composites display excellent rate capability, superior cycle life and outstanding low temperature performance, which are promising for lithium-ion battery applications in electrical vehicles and electrical energy storage systems.

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

NASA Technical Reports Server (NTRS)

Meredith, Roger D.; Neudeck, Philip G.; Ponchak, George E.; Beheim, Glenn M.; Scardelletti, Maximilian; Jordan, Jennifer L.; Chen, Liang-Yu; Spry, David J.; Krawowski, Michael J.; Hunter, Gary W.

2011-01-01

In an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.

Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.

2016-01-18

Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurementmore » revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.« less

Self-consistent discharge growing model of helicon plasma

NASA Astrophysics Data System (ADS)

Isayama, Shogo; Hada, Tohru; Shinohara, Shunjiro; Tanikawa, Takao

2015-11-01

Helicon plasma is a high-density and low-temperature plasma generated by the electromagnetic (Helicon) wave excited in the plasma. It is thought to be useful for various applications including electric thrusters. Physics of helicon plasma production involves such fundamental processes as the wave propagation (dispersion relation), collisional and non-collisional wave damping, plasma heating, ionization/recombination of neutral particles, and modification of the dispersion relation by newly ionized plasma. There remain a number of unsolved physical issues such as, how the Helicon and the TG modes influence the plasma density, electron temperature and their spatial profiles. While the Helicon mode is absorbed in the bulk plasma, the TG mode is mostly absorbed near the edge of the plasma. The local power deposition in the helicon plasma is mostly balanced by collisional loss. This local power balance can give rise to the inhomogeneous electron temperature profile that leads to time evolution of density profile and dispersion relation. In our study, we construct a self-consistent model of the discharge evolution that includes the wave excitation, electron heat transfer, and diffusion of charged particles.

Fast algorithm for spectral processing with application to on-line welding quality assurance

NASA Astrophysics Data System (ADS)

Mirapeix, J.; Cobo, A.; Jaúregui, C.; López-Higuera, J. M.

2006-10-01

A new technique is presented in this paper for the analysis of welding process emission spectra to accurately estimate in real-time the plasma electronic temperature. The estimation of the electronic temperature of the plasma, through the analysis of the emission lines from multiple atomic species, may be used to monitor possible perturbations during the welding process. Unlike traditional techniques, which usually involve peak fitting to Voigt functions using the Levenberg-Marquardt recursive method, sub-pixel algorithms are used to more accurately estimate the central wavelength of the peaks. Three different sub-pixel algorithms will be analysed and compared, and it will be shown that the LPO (linear phase operator) sub-pixel algorithm is a better solution within the proposed system. Experimental tests during TIG-welding using a fibre optic to capture the arc light, together with a low cost CCD-based spectrometer, show that some typical defects associated with perturbations in the electron temperature can be easily detected and identified with this technique. A typical processing time for multiple peak analysis is less than 20 ms running on a conventional PC.

Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

NASA Astrophysics Data System (ADS)

Huang, Chung-Che; Al-Saab, Feras; Wang, Yudong; Ou, Jun-Yu; Walker, John C.; Wang, Shuncai; Gholipour, Behrad; Simpson, Robert E.; Hewak, Daniel W.

2014-10-01

Nano-scale MoS2 thin films are successfully deposited on a variety of substrates by atmospheric pressure chemical vapor deposition (APCVD) at ambient temperature, followed by a two-step annealing process. These annealed MoS2 thin films are characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), micro-Raman, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-VIS-NIR spectrometry, photoluminescence (PL) and Hall Effect measurement. Key optical and electronic properties of APCVD grown MoS2 thin films are determined. This APCVD process is scalable and can be easily incorporated with conventional lithography as the deposition is taking place at room temperature. We also find that the substrate material plays a significant role in the crystalline structure formation during the annealing process and single crystalline MoS2 thin films can be achieved by using both c-plane ZnO and c-plane sapphire substrates. These APCVD grown nano-scale MoS2 thin films show great promise for nanoelectronic and optoelectronic applications.

Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications

NASA Astrophysics Data System (ADS)

Ul Haq, Bakhtiar; AlFaify, S.; Ahmed, R.; Butt, Faheem K.; Laref, A.; Goumri-Said, Souraya; Tahir, S. A.

2018-05-01

Germanium mono-chalcogenides have received considerable attention for being a promising replacement for the relatively toxic and expensive chalcogenides in renewable and sustainable energy applications. In this paper, we explore the potential of the recently discovered novel cubic structured (π-phase) GeS and GeSe for thermoelectric applications in the framework of density functional theory coupled with Boltzmann transport theory. To examine the modifications in their physical properties, the across composition alloying of π-GeS and π-GeSe (such as π-GeS1-xSex for x =0, 0.25, 0.50, 0.75, and 1) has been performed that has shown important effects on the electronic band structures and effective masses of charge carriers. An increase in Se composition in π-GeS1-xSex has induced a downward shift in their conduction bands, resulting in the narrowing of their energy band gaps. The thermoelectric coefficients of π-GeS1-xSex have been accordingly influenced by the evolution of the electronic band structures and effective masses of charge carriers. π-GeS1-xSex features sufficiently larger values of Seebeck coefficients, power factors and figures of merit (ZTs), which experience further improvement with an increase in temperature, revealing their potential for high-temperature applications. The calculated results show that ZT values equivalent to unity can be achieved for π-GeS1-xSex at appropriate n-type doping levels. Our calculations for the formation enthalpies indicate that a π-GeS1-xSex alloying system is energetically stable and could be synthesized experimentally. These intriguing characteristics make π-GeS1-xSex a promising candidate for futuristic thermoelectric applications in energy harvesting devices.

High-Temperature Corrosion Behavior of SiBCN Fibers for Aerospace Applications.

PubMed

Ji, Xiaoyu; Wang, Shanshan; Shao, Changwei; Wang, Hao

2018-06-13

Amorphous SiBCN fibers possessing superior stability against oxidation have become a desirable candidate for high-temperature aerospace applications. Currently, investigations on the high-temperature corrosion behavior of these fibers for the application in high-heat engines are insufficient. Here, our polymer-derived SiBCN fibers were corroded at 1400 °C in air and simulated combustion environments. The fibers' structural evolution after corrosion in two different conditions and the potential mechanisms are investigated. It shows that the as-prepared SiBCN fibers mainly consist of amorphous networks of SiN 3 C, SiN 4 , B-N hexatomic rings, free carbon clusters, and BN 2 C units. High-resolution transmission electron microscopy cross-section observations combined with energy-dispersive spectrometry/electron energy-loss spectroscopy analysis exhibit a trilayer structure with no detectable cracks for fibers after corrosion, including the outermost SiO 2 layer, the h-BN grain-contained interlayer, and the uncorroded fiber core. A high percentage of water vapor contained in the simulated combustion environment triggers the formation of abundant α-cristobalite nanoparticles dispersing in the amorphous SiO 2 phase, which are absent in fibers corroded in air. The formation of h-BN grains in the interlayer could be ascribed to the sacrificial effects of free carbon clusters, Si-C, and Si-N units reacting with oxygen diffusing inward, which protects h-BN grains formed by networks of B-N hexatomic rings in original SiBCN fibers. These results improve our understanding of the corrosion process of SiBCN fibers in a high-temperature oxygen- and water-rich atmosphere.

Fully printed flexible fingerprint-like three-axis tactile and slip force and temperature sensors for artificial skin.

PubMed

Harada, Shingo; Kanao, Kenichiro; Yamamoto, Yuki; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2014-12-23

A three-axis tactile force sensor that determines the touch and slip/friction force may advance artificial skin and robotic applications by fully imitating human skin. The ability to detect slip/friction and tactile forces simultaneously allows unknown objects to be held in robotic applications. However, the functionalities of flexible devices have been limited to a tactile force in one direction due to difficulties fabricating devices on flexible substrates. Here we demonstrate a fully printed fingerprint-like three-axis tactile force and temperature sensor for artificial skin applications. To achieve economic macroscale devices, these sensors are fabricated and integrated using only printing methods. Strain engineering enables the strain distribution to be detected upon applying a slip/friction force. By reading the strain difference at four integrated force sensors for a pixel, both the tactile and slip/friction forces can be analyzed simultaneously. As a proof of concept, the high sensitivity and selectivity for both force and temperature are demonstrated using a 3×3 array artificial skin that senses tactile, slip/friction, and temperature. Multifunctional sensing components for a flexible device are important advances for both practical applications and basic research in flexible electronics.

Spectroscopic method to study low charge state ion and cold electron population in ECRIS plasma

NASA Astrophysics Data System (ADS)

Kronholm, R.; Kalvas, T.; Koivisto, H.; Tarvainen, O.

2018-04-01

The results of optical emission spectroscopy experiments probing the cold electron population of a 14 GHz Electron Cyclotron Resonance Ion Source (ECRIS) are reported. The study has been conducted with a high resolution spectrometer and data acquisition setup developed specifically for the diagnostics of weak emission line characteristic to ECRIS plasmas. The optical emission lines of low charge state ions and neutral atoms of neon have been measured and analyzed with the line-ratio method. The aforementioned electron population temperature of the cold electron population (Te < 100 eV) is determined for Maxwell-Boltzmann and Druyvesteyn energy distributions to demonstrate the applicability of the method. The temperature was found to change significantly when the extraction voltage of the ion source is turned on/off. In the case of the Maxwellian distribution, the temperature of the cold electron population is 20 ± 10 eV when the extraction voltage is off and 40 ± 10 eV when it is on. The optical emission measurements revealed that the extraction voltage also affects both neutral and ion densities. Based on the rate coefficient analysis with the aforementioned temperatures, switching the extraction voltage off decreases the rate coefficient of neutral to 1+ ionization to 42% and 1+ to 2+ ionization to 24% of the original. This suggests that switching the extraction voltage on favors ionization to charge states ≥2+ and, thus, the charge state distributions of ECRIS plasmas are probably different with the extraction voltage on/off. It is therefore concluded that diagnostics results of ECRIS plasmas obtained without the extraction voltage are not depicting the plasma conditions in normal ECRIS operation.

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope.

PubMed

Hieckmann, Ellen; Nacke, Markus; Allardt, Matthias; Bodrov, Yury; Chekhonin, Paul; Skrotzki, Werner; Weber, Jörg

2016-05-28

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

PubMed Central

Hieckmann, Ellen; Nacke, Markus; Allardt, Matthias; Bodrov, Yury; Chekhonin, Paul; Skrotzki, Werner; Weber, Jörg

2016-01-01

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared. PMID:27285177

Modulating the electronic and magnetic properties of bilayer borophene via transition metal atoms intercalation: from metal to half metal and semiconductor.

PubMed

Zhang, Xiuyun; Sun, Yi; Ma, Liang; Zhao, Xinli; Yao, Xiaojing

2018-07-27

Borophene, a two-dimensional monolayer made of boron atoms, has attracted wide attention due to its appealing properties. Great efforts have been devoted to fine tuning its electronic and magnetic properties for desired applications. Herein, we theoretically investigate the versatile electronic and magnetic properties of bilayer borophene (BLB) intercalated by 3d transition metal (TM) atoms, TM@BLBs (TM = Ti-Fe), using ab initio calculations. Four allotropes of AA-stacking (α 1 -, β-, β 12 - and χ 3 -) BLBs with different intercalation concentrations of TM atoms are considered. Our results show that the TM atoms are strongly bonded to the borophene layers with fairly large binding energies, around 6.31 ∼ 15.44 eV per TM atom. The BLBs with Cr and Mn intercalation have robust ferromagnetism, while for the systems decorated with Fe atoms, fruitful magnetic properties, such as nonmagnetic, ferromagnetic or antiferromagnetic, are identified. In particular, the α 1 - and β-BLBs intercalated by Mn or Fe atom can be transformed into a semiconductor, half metal or graphene-like semimetal. Moreover, some heavily doped TM@BLBs expose high Curie temperatures above room temperature. The attractive properties of TM@BLBs entail an efficient way to modulate the electronic and magnetic properties of borophene sheets for advanced applications.

Compressive strain induced enhancement in thermoelectric-power-factor in monolayer MoS2 nanosheet

NASA Astrophysics Data System (ADS)

Dimple; Jena, Nityasagar; De Sarkar, Abir

2017-06-01

Strain and temperature induced tunability in the thermoelectric properties in monolayer MoS2 (ML-MoS2) has been demonstrated using density functional theory coupled to semi-classical Boltzmann transport theory. Compressive strain, in general and uniaxial compressive strain (along the zig-zag direction), in particular, is found to be most effective in enhancing the thermoelectric power factor, owing to the higher electronic mobility and its sensitivity to lattice compression along this direction. Variation in the Seebeck coefficient and electronic band gap with strain is found to follow the Goldsmid-Sharp relation. n-type doping is found to raise the relaxation time-scaled thermoelectric power factor higher than p-type doping and this divide widens with increasing temperature. The relaxation time-scaled thermoelectric power factor in optimally n-doped ML-MoS2 is found to undergo maximal enhancement under the application of 3% uniaxial compressive strain along the zig-zag direction, when both the (direct) electronic band gap and the Seebeck coefficient reach their maximum, while the electron mobility drops down drastically from 73.08 to 44.15 cm2 V-1 s-1. Such strain sensitive thermoelectric responses in ML-MoS2 could open doorways for a variety of applications in emerging areas in 2D-thermoelectrics, such as on-chip thermoelectric power generation and waste thermal energy harvesting.

Fast-Ion Spectrometry of ICF Implosions and Laser-Foil Experiments at the Omega and MTW Laser Facilities

NASA Astrophysics Data System (ADS)

Sinenian, Nareg

Fast ions generated from laser-plasma interactions (LPI) have been used to study inertial confinement fusion (ICF) implosions and laser-foil interactions. LPI, which vary in nature depending on the wavelength and intensity of the driver, generate hot electrons with temperatures ranging from tens to thousands of kilo-electron-volts. These electrons, which accelerate the ions measured in this work, can be either detrimental or essential to implosion performance depending on the ICF scheme employed. In direct-drive hot-spot ignition, hot electrons can preheat the fuel and raise the adiabat, potentially degrading compression in the implosion. The amount of preheat depends on the hot-electron source characteristics and the time duration over which electrons can deposit energy into the fuel. This time duration is prescribed by the evolution of a sheath that surrounds the implosion and traps electrons. Fast-ion measurements have been used to develop a circuit model that describes the time decay of the sheath voltage for typical OMEGA implosions. In the context of electron fast ignition, the produced fast ions are considered a loss channel that has been characterized for the first time. These ions have also been used as a diagnostic tool to infer the temperature of the hot electrons in fast-ignition experiments. It has also been shown that the hot-electron temperature scales with laser intensity as expected, but is enhanced by a factor of 2-3. This enhancement is possibly due to relativistic effects and leads to poor implosion performance. Finally, fast-ion generation by ultra-intense lasers has also been studied using planar targets. The mean and maximum energies of protons and heavy ions has been measured, and it has been shown that a two-temperature hot-electron distribution affects the energies of heavy ions and protons. This work is important for advanced fusion concepts that utilize ion beams and also has applications in medicine. (Copies available exclusively from MIT Libraries, libraries.mit.edu/docs - docs@mit.edu)

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE PAGES

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; ...

2017-08-01

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

Elastic properties, thermal stability, and thermodynamic parameters of MoAlB

NASA Astrophysics Data System (ADS)

Kota, Sankalp; Agne, Matthias; Zapata-Solvas, Eugenio; Dezellus, Olivier; Lopez, Diego; Gardiola, Bruno; Radovic, Miladin; Barsoum, Michel W.

2017-04-01

MoAlB is the first and, so far, the only transition-metal boride that forms alumina when heated in air and is thus potentially useful for high-temperature applications. Herein, the thermal stability in argon and vacuum atmospheres and the thermodynamic parameters of bulk polycrystalline MoAlB were investigated experimentally. At temperatures above 1708 K, in vacuum and inert atmospheres, this compound incongruently melts into the binary MoB and liquid aluminum metal as confirmed by differential thermal analysis, quenching experiments, x-ray diffraction, and scanning electron microscopy. Making use of that information together with heat-capacity measurements in the 4-1000-K temperature range—successfully modeled as the sum of lattice, electronic, and dilation contributions—the standard enthalpy, entropy, and free energy of formation are computed and reported for the full temperature range. The standard enthalpy of formation of MoAlB at 298 K was found to be -132 ±3.2 kJ/mol. Lastly, the thermal conductivity values are computed and modeled using a variation of the Slack model in the 300-1600-K temperature range.

Electronic and optoelectronic device applications based on ReS2

NASA Astrophysics Data System (ADS)

Liu, Erfu; Long, Mingsheng; Wang, Yaojia; Pan, Yiming; Ho, Chinghwa; Wang, Baigeng; Miao, Feng

Rhenium disulfide (ReS2) is a unique semiconducting TMD with distorted 1T structure and weak interlayer coupling. We have previously investigated its in-plane anisotropic property and electronic applications on FET and digital inverters. In this talk, we will present high responsivity phototransistors based on few-layer ReS2. Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is one of the highest value among individual two-dimensional materials with similar device structures. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. The existence of trap states is proved by temperature dependent transport measurements. It further enables the detection of weak signals. Our studies underscore ReS2 as a promising material for future electronic and sensitive optoelectronic applications.

Cryogenic Behavior of the High Temperature Crystal Oscillator PX-570

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Scherer, Steven

2011-01-01

Microprocessors, data-acquisition systems, and electronic controllers usually require timing signals for proper and accurate operation. These signals are, in most cases, provided by circuits that utilize crystal oscillators due to availability, cost, ease of operation, and accuracy. Stability of these oscillators, i.e. crystal characteristics, is usually governed, amongst other things, by the ambient temperature. Operation of these devices under extreme temperatures requires, therefore, the implementation of some temperature-compensation mechanism either through the manufacturing process of the oscillator part or in the design of the circuit to maintain stability as well as accuracy. NASA future missions into deep space and planetary exploration necessitate operation of electronic instruments and systems in environments where extreme temperatures along with wide-range thermal swings are countered. Most of the commercial devices are very limited in terms of their specified operational temperature while very few custom-made and military-grade parts have the ability to operate in a slightly wider range of temperature. Thus, it is becomes mandatory to design and develop circuits that are capable of operation efficiently and reliably under the space harsh conditions. This report presents the results obtained on the evaluation of a new (COTS) commercial-off-the-shelf crystal oscillator under extreme temperatures. The device selected for evaluation comprised of a 10 MHz, PX-570-series crystal oscillator. This type of device was recently introduced by Vectron International and is designed as high temperature oscillator [1]. These parts are fabricated using proprietary manufacturing processes designed specifically for high temperature and harsh environment applications [1]. The oscillators have a wide continuous operating temperature range; making them ideal for use in military and aerospace industry, industrial process control, geophysical fields, avionics, and engine control. They exhibit low jitter and phase noise, consume little power, and are suited for high shock and vibration applications. The unique package design of these crystal oscillators offers a small ceramic package footprint, as well as providing both through-hole mounting and surface mount options.

Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

NASA Astrophysics Data System (ADS)

Kizilyalli, I. C.; Aktas, O.

2015-12-01

There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction field-effect transistors with BV = 1000 V and drain currents of 4 A are fabricated and characterized over the same temperature range. It is demonstrated that vertical GaN devices (diodes and transistors) utilizing p-n junctions are suitable for most practical applications including automotive ones (210 K < T < 423 K). While devices are functional at cryogenic temperatures (77 K) there may be some limitations to their performance due the freeze-out of Mg acceptors.

Selective control of electron and hole tunneling in 2D assembly

PubMed Central

Chu, Dongil; Lee, Young Hee; Kim, Eun Kyu

2017-01-01

Recent discoveries in the field of two-dimensional (2D) materials have led to the demonstration of exotic devices. Although they have new potential applications in electronics, thermally activated transport over a metal/semiconductor barrier sets physical subthermionic limitations. The challenge of realizing an innovative transistor geometry that exploits this concern remains. A new class of 2D assembly (namely, “carristor”) with a configuration similar to the metal-insulator-semiconductor structure is introduced in this work. Superior functionalities, such as a current rectification ratio of up to 400,000 and a switching ratio of higher than 106 at room temperature, are realized by quantum-mechanical tunneling of majority and minority carriers across the barrier. These carristors have a potential application as the fundamental building block of low–power consumption electronics. PMID:28439554

BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor

NASA Astrophysics Data System (ADS)

Zhang, Haidong; Liu, Hanyu; Wei, Kaya; Kurakevych, Oleksandr O.; Le Godec, Yann; Liu, Zhenxian; Martin, Joshua; Guerrette, Michael; Nolas, George S.; Strobel, Timothy A.

2017-04-01

Large-volume, phase-pure synthesis of BC8 silicon (I a 3 ¯ , c I 16 ) has enabled bulk measurements of optical, electronic, and thermal properties. Unlike previous reports that conclude BC8-Si is semimetallic, we demonstrate that this phase is a direct band gap semiconductor with a very small energy gap and moderate carrier concentration and mobility at room temperature, based on far- and midinfrared optical spectroscopy, temperature-dependent electrical conductivity, Seebeck and heat capacity measurements. Samples exhibit a plasma wavelength near 11 μ m , indicating potential for infrared plasmonic applications. Thermal conductivity is reduced by 1-2 orders of magnitude depending on temperature as compared with the diamond cubic (DC-Si) phase. The electronic structure and dielectric properties can be reproduced by first-principles calculations with hybrid functionals after adjusting the level of exact Hartree-Fock (HF) exchange mixing. These results clarify existing limited and controversial experimental data sets and ab initio calculations.

Reversal of spontaneous magnetization and spontaneous exchange bias for Sm1-xYxCrO3: The effect of Y doping

NASA Astrophysics Data System (ADS)

Zhang, Hongguang; Wang, Jianhua; Xie, Liang; Fu, Dexiang; Guo, Yanyan; Li, Yongtao

2017-11-01

We report the crystal and electronic structures and magnetic properties of non-magnetic Y3+ ion doped SmCrO3 crystals. Structural distortion and electronic structure variation are caused by cation disorder due to Y doping. Although the spin moment of Sm3+ is diluted by nonmagnetic Y ions, spin reorientation continues to exist, and the temperature-dependent magnetization reversal effect and the spontaneous exchange bias effect under zero field cooling are simultaneously induced below Neel temperature. Significantly, the method of doping promotes the achievement of temperature dependent tunable switching of magnetization and sign of a spontaneous exchange bias from positive to negative. Our work provides more tunable ways to the sign reversal of magnetization and exchange bias, which have potential application in designing magnetic random access memory devices, thermomagnetic switches and spin-valve devices.

Parametric scaling of neutral and ion excited state densities in an argon helicon source

NASA Astrophysics Data System (ADS)

McCarren, D.; Scime, E.

2016-04-01

We report measurements of the absolute density and temperature of ion and neutral excited states in an argon helicon source. The excited ion state density, which depends on ion density, electron density, and electron temperature, increases sharply with increasing magnetic field in the source. The neutral argon metastable density measurements are consistent with an increasing ionization fraction with increasing magnetic field strength. The ion temperature shows no evidence of increased heating with increasing magnetic field strength (which has only been observed in helicon sources operating at driving frequencies close to the lower hybrid frequency). The measurements were obtained through cavity ring down spectroscopy, a measurement technique that does not require the target excited state to be metastable or part of a fluorescence scheme; and is therefore applicable to any laser accessible atomic or ionic transition in a plasma.

Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga 2O 3 thin films grown by pulsed laser deposition

DOE PAGES

Garten, Lauren M.; Zakutayev, Andriy; Perkins, John D.; ...

2016-11-21

Beta-gallium oxide (β-Ga 2O 3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga 2O 3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga 2O 3 films on (0001) sapphire and (–201) Ga 2O 3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependencemore » to the phase formation, morphology, and electronic properties of β-Ga 2O 3 from 350 to 550 °C.« less

A Gaussian Wave Packet Propagation Approach to Vibrationally Resolved Optical Spectra at Non-Zero Temperatures.

PubMed

Reddy, Ch Sridhar; Prasad, M Durga

2016-04-28

An effective time dependent approach based on a method that is similar to the Gaussian wave packet propagation (GWP) technique of Heller is developed for the computation of vibrationally resolved electronic spectra at finite temperatures in the harmonic, Franck-Condon/Hertzberg-Teller approximations. Since the vibrational thermal density matrix of the ground electronic surface and the time evolution operator on that surface commute, it is possible to write the spectrum generating correlation function as a trace of the time evolved doorway state. In the stated approximations, the doorway state is a superposition of the harmonic oscillator zero and one quantum eigenfunctions and thus can be propagated by the GWP. The algorithm has an O(N(3)) dependence on the number of vibrational modes. An application to pyrene absorption spectrum at two temperatures is presented as a proof of the concept.

Colloidal Synthesis and Thermoelectric Properties of CuFeSe2 Nanocrystals

PubMed Central

Zhang, Bing-Qian; Zuo, Yong; Chen, Jing-Shuai; Niu, He-Lin; Mao, Chang-Jie

2017-01-01

Copper-based chalcogenides that contain abundant, low-cost and environmentally-friendly elements, are excellent materials for numerous energy conversion applications, such as photocatalysis, photovoltaics, photoelectricity and thermoelectrics (TE). Here, we present a high-yield and upscalable colloidal synthesis route for the production of monodisperse ternary I-III-VI2 chalcogenides nanocrystals (NCs), particularly stannite CuFeSe2, with uniform shape and narrow size distributions by using selenium powder as the anion precursor and CuCl2·2H2O and FeCl3 as the cationic precursors. The composition, the state of valence, size and morphology of the CuFeSe2 materials were examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), transmission electron microscope (TEM) and high resolution transmission electron microscope (HRTEM), respectively. Furthermore, the TE properties characterization of these dense nanomaterials compacted from monodisperse CuFeSe2 NCs by hot press at 623 K were preliminarily studied after ligand removal by means of hydrazine and hexane solution. The TE performances of the sintered CuFeSe2 pellets were characterized in the temperature range from room temperature to 653 K. Finally, the dimensionless TE figure of merit (ZT) of this Earth-abundant and intrinsic p-type CuFeSe2 NCs is significantly increased to 0.22 at 653 K in this work, which is demonstrated to show a promising TE materialand makes it a possible p-type candidate for medium-temperature TE applications. PMID:29278381

Application of low-temperature plasma for the synthesis of hydrogenated graphene (graphane)

NASA Astrophysics Data System (ADS)

Shavelkina, M. B.; Amirov, R. H.; Katarzhis, V. A.; Kiselev, V. I.

2017-12-01

The possibility of a direct synthesis of hydrogenated graphene in decomposition of methane by means of low-temperature plasma was investigated. A DC plasma torch with an expanding channel-anode, a vortex gas supply and a self-setting arc length was used as a generator of low-temperature plasma. Argon was used as the plasma-forming gas. The temperatures of argon plasma and with methane addition to it were determined on the basis of spectral measurements. The synthesis products were characterized by electron microscopy and thermogravimetry. The effect of hydrogenated graphene as a nanomodifier on the properties of the cubic boron nitride based functional ceramics was investigated.