Experiments on Quantum Hall Topological Phases in Ultra Low Temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Rui-Rui

2015-02-14

This project is to cool electrons in semiconductors to extremely low temperatures and to study new states of matter formed by low-dimensional electrons (or holes). At such low temperatures (and with an intense magnetic field), electronic behavior differs completely from ordinary ones observed at room temperatures or regular low temperature. Studies of electrons at such low temperatures would open the door for fundamental discoveries in condensed matter physics. Present studies have been focused on topological phases in the fractional quantum Hall effect in GaAs/AlGaAs semiconductor heterostructures, and the newly discovered (by this group) quantum spin Hall effect in InAs/GaSb materials.more » This project consists of the following components: 1) Development of efficient sample cooling techniques and electron thermometry: Our goal is to reach 1 mK electron temperature and reasonable determination of electron temperature; 2) Experiments at ultra-low temperatures: Our goal is to understand the energy scale of competing quantum phases, by measuring the temperature-dependence of transport features. Focus will be placed on such issues as the energy gap of the 5/2 state, and those of 12/5 (and possible 13/5); resistive signature of instability near 1/2 at ultra-low temperatures; 3) Measurement of the 5/2 gaps in the limit of small or large Zeeman energies: Our goal is to gain physics insight of 5/2 state at limiting experimental parameters, especially those properties concerning the spin polarization; 4) Experiments on tuning the electron-electron interaction in a screened quantum Hall system: Our goal is to gain understanding of the formation of paired fractional quantum Hall state as the interaction pseudo-potential is being modified by a nearby screening electron layer; 5) Experiments on the quantized helical edge states under a strong magnetic field and ultralow temperatures: our goal is to investigate both the bulk and edge states in a quantum spin Hall insulator under time-reversal symmetry-broken conditions.« less

Hall effect in high- Tc Y 1Ba 2Cu 3O 7-δ superconductor

NASA Astrophysics Data System (ADS)

Vezzoli, G. C.; Burke, T.; Moon, B. M.; Lalevic, B.; Safari, A.; Sundar, H. G. K.; Bonometti, R.; Alexander, C.; Rau, C.; Waters, K.

1989-04-01

We have performed point-by-point and continuous Hall effect experiments as a function of temperature in polycrystalline Y 1Ba 2Cu 3O 7-δ. We have shown that the positive Hall constant shows an abrupt increase upon decreasing temperature at a value just above Tc. This temperature corresponds to where the resistance versus temperature data deviates from linearity. At very high fields of 6.8 and 15 T we observe a subsequent decrease in RH. We interpret these data as supportive of a contribution toward the superconductivity mechanism arising from internal excitions or change transfer excitations such that the bound exciton concentration increases near Tc at the expense of positive carries which are reflected in both bound and free holes.

The Anomalous Hall Effect and Non-Equilibrium Transport

NASA Astrophysics Data System (ADS)

Ye, Fei

1995-01-01

This thesis contains three relatively independent research areas. In the first part of this thesis, the anomalous Hall effect of amorphous, high-resistance, Fe films (2 -10 monolayers thick) is investigated as a function of temperature. We find a logarithmic temperature dependence of the anomalous Hall resistance similar to the Coulomb anomaly of the resistance but twice its magnitude. The measurements are in excellent agreement with a theoretical calculation and provide us with an independent confirmation of the influence of the enhanced Coulomb interaction in disordered electron systems on transport properties. In the second part of the thesis, the nonequilibrium transport properties of metallic microstructures are studied. An electron beam lithography technique is used in making small structures. The electron temperature and phonon temperature are calculated. It is confirmed that the electron temperatures obtained from both thermometers (weak localization and the Coulomb anomaly) are consistent. It is also found that the phonon temperature in the film is considerably higher than the substrate temperature in the experiments. In addition, the dimensionality of the phonon system in the film is discussed, as well as the phonon escape time. In the third part, the magnetic behavior of V on Au films is studied. Weak localization and the anomalous Hall effect are used to investigate the magnetic properties of sub-mono, mono-, and multilayers of Vanadium on the surface of an Au film. Dilute V atoms possess a strong magnetic moment. For a monolayer the magnetic scattering is reduced by a factor of about 40. This suggests a strongly reduced moment of V compared with the dilute V coverage. From the anomalous Hall effect, it is concluded that the magnetic structure is anti-ferromagnetic; the moment per V atom in multilayers progressively diminishes but is still finite for 16 atomic layers of V. In Appendix A, the nonequilibrium distribution of the phonon system in a metal film is evaluated. The phonon escape time and the effective phonon temperature are calculated.

Low temperature hall effect investigation of conducting polymer-carbon nanotubes composite network.

PubMed

Bahrami, Afarin; Talib, Zainal Abidin; Yunus, Wan Mahmood Mat; Behzad, Kasra; M Abdi, Mahnaz; Din, Fasih Ud

2012-11-14

Polypyrrole (PPy) and polypyrrole-carboxylic functionalized multi wall carbon nanotube composites (PPy/f-MWCNT) were synthesized by in situ chemical oxidative polymerization of pyrrole on the carbon nanotubes (CNTs). The structure of the resulting complex nanotubes was characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The effects of f-MWCNT concentration on the electrical properties of the resulting composites were studied at temperatures between 100 K and 300 K. The Hall mobility and Hall coefficient of PPy and PPy/f-MWCNT composite samples with different concentrations of f-MWCNT were measured using the van der Pauw technique. The mobility decreased slightly with increasing temperature, while the conductivity was dominated by the gradually increasing carrier density.

Hall Thruster Thermal Modeling and Test Data Correlation

NASA Technical Reports Server (NTRS)

Myers, James; Kamhawi, Hani; Yim, John; Clayman, Lauren

2016-01-01

The life of Hall Effect thrusters are primarily limited by plasma erosion and thermal related failures. NASA Glenn Research Center (GRC) in cooperation with the Jet Propulsion Laboratory (JPL) have recently completed development of a Hall thruster with specific emphasis to mitigate these limitations. Extending the operational life of Hall thursters makes them more suitable for some of NASA's longer duration interplanetary missions. This paper documents the thermal model development, refinement and correlation of results with thruster test data. Correlation was achieved by minimizing uncertainties in model input and recognizing the relevant parameters for effective model tuning. Throughout the thruster design phase the model was used to evaluate design options and systematically reduce component temperatures. Hall thrusters are inherently complex assemblies of high temperature components relying on internal conduction and external radiation for heat dispersion and rejection. System solutions are necessary in most cases to fully assess the benefits and/or consequences of any potential design change. Thermal model correlation is critical since thruster operational parameters can push some components/materials beyond their temperature limits. This thruster incorporates a state-of-the-art magnetic shielding system to reduce plasma erosion and to a lesser extend power/heat deposition. Additionally a comprehensive thermal design strategy was employed to reduce temperatures of critical thruster components (primarily the magnet coils and the discharge channel). Long term wear testing is currently underway to assess the effectiveness of these systems and consequently thruster longevity.

Topological Defects in Double Exchange Materials and Anomalous Hall Resistance.

NASA Astrophysics Data System (ADS)

Calderón, M. J.; Brey, L.

2000-03-01

Recently it has been proposed that the anomalous Hall effect observed in Double Exchange materials is due to Berry phase effects caused by carrier hopping in a nontrivial spins background (J.Ye et al.) Phys.Rev.Lett. 83, 3737 1999.In order to study this possibility we have performed Monte Carlo simulations of the Double Exchange model and we have computed, as a function of the temperature, the number of topological defects in the system and the internal gauge magnetic field associated with these defects. In the simplest Double Exchange model the gauge magnetic field is random, and its average value is zero. The inclusion in the problem of spin-orbit coupling privileges the opposite direction of the magnetization and an anomalous Hall resistance (AHR) effect arises. We have computed the AHR, and we have obtained its temperature dependence. In agreement with previous experiments we obtain that AHR increases exponentially at low temperature and presents a maximum at a temperature slightly higher than the critical temperature.

Observation of the Zero Hall Plateau in a Quantum Anomalous Hall Insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Yang; Feng, Xiao; Ou, Yunbo

We report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a quantum anomalous Hall insulator. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity when the magnetization reverses. The features of the zero Hall plateau are shown to be closely related to that of the quantum anomalous Hall effect, but its temperature evolution exhibits a significant difference from the network model for a conventional quantum Hall plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to amore » quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.« less

Incomplete Ionization of a 110 meV Unintentional Donor in Beta-Ga2O3 and its Effect on Power Devices (Postprint)

DTIC Science & Technology

2017-10-16

characterized via temperature dependent Hall effect measurements up to 1000 K and found to have a donor energy of 110 meV. The existence of the...unintentional donor is confirmed by temperature dependent admittance spectroscopy, with an activation energy of 131 meV determined via that technique, in...characterized via temperature dependent Hall effect measurements up to 1000 K and found to have a donor energy of 110 meV. The existence of the

Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

PubMed

Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

2016-05-17

Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

Tuning charge transport in pentacene thin-film transistors using the strain-induced electron-phonon coupling modification

NASA Astrophysics Data System (ADS)

Lin, Yow-Jon; Chang, Hsing-Cheng; Liu, Day-Shan

2015-03-01

Tuning charge transport in the bottom-contact pentacene-based organic thin-film transistors (OTFTs) using a MoO x capping layer that serves to the electron-phonon coupling modification is reported. For OTFTs with a MoO x front gate, the enhanced field-effect carrier mobility is investigated. The time domain data confirm the electron-trapping model. To understand the origin of a mobility enhancement, an analysis of the temperature-dependent Hall-effect characteristics is presented. Similarly, the Hall-effect carrier mobility was dramatically increased by capping a MoO x layer on the pentacene front surface. However, the carrier concentration is not affected. The Hall-effect carrier mobility exhibits strong temperature dependence, indicating the dominance of tunneling (hopping) at low (high) temperatures. A mobility enhancement is considered to come from the electron-phonon coupling modification that results from the contribution of long-lifetime electron trapping.

Specific features of electron scattering in uniaxially deformed n-Ge single crystals in the presence of radiation defects

NASA Astrophysics Data System (ADS)

Luniov, S. V.; Zimych, A. I.; Nazarchuk, P. F.; Maslyuk, V. T.; Megela, I. G.

2016-12-01

Temperature dependencies for concentration of electrons and the Hall mobility for unirradiated and irradiated by the flow of electrons ? single crystals ?, with the energy of ?, for different values of uniaxial pressures along the crystallographic directions ?, ? and ? are obtained on the basis of piezo-Hall effect measurements. Non-typical growth of the Hall mobility of electrons for irradiated single crystals ? in comparison with unirradiated with the increasing of value of uniaxial pressures along the crystallographic directions ? (for the entire range of the investigated temperatures) and ? (to temperatures ?) has been revealed. Such an effect of the Hall mobility increase for uniaxially deformed single crystals ? is explained by the reduction of gradients of a resistance as a result of reduction in the amplitude of a large-scale potential with deformation and concentration of charged A-centers in the process of their recharge by the increasing of uniaxial pressure and consequently the probability of scattering on these centers. Theoretical calculations for temperature dependencies of the Hall mobility for uniaxially deformed single crystals ? in terms of the electrons scattering on the ions of shallow donors, acoustic, optical and intervalley phonons, regions of disordering and large-scale potential is good conformed to the corresponding experimental results at temperatures T<220 K for the case of uniaxial pressures along the crystallographic directions ? and ? and for temperatures ? when the uniaxial pressure is directed along the crystallographic directions ?. The mechanism of electron scattering on a charged radiation defects (which correspond to the deep energy levels of A-centers) 'is turned off' for the given temperatures due to the uniaxial pressure. Reduction of the Hall mobility in transition through a maximum of dependence ? with the increasing temperature for cases of the uniaxial deformation of the irradiated single crystals ? along the crystallographic directions ? and ? is explained by the deforming redistribution of electrons between the minima of conduction band of germanium with different mobility.

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb) 2Te 3 film

DOE PAGES

Li, W.; Claassen, M.; Chang, Cui -Zu; ...

2016-09-07

The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb) 2Te 3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb) 2Te 3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Diracmore » point. Finally, our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.« less

Anomalous Hall effect in ion-beam sputtered Co2FeAl full Heusler alloy thin films

NASA Astrophysics Data System (ADS)

Husain, Sajid; Kumar, Ankit; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

2017-11-01

Investigations of temperature dependent anomalous Hall effect and longitudinal resistivity in Co2FeAl (CFA) thin films grown on Si(1 0 0) at different substrate temperature Ts are reported. The scaling of the anomalous Hall conductivity (AHC) and the associated phenomenological mechanisms (intrinsic and extrinsic) are analyzed vis-à-vis influence of Ts. The intrinsic contribution to AHC is found to be dominating over the extrinsic one. The appearance of a resistivity minimum at low temperature necessitates the inclusion of quantum corrections on account of weak localization and electron-electron scattering effects whose strength reduces with increase in Ts. The study establishes that the optimization of Ts plays an important role in the improvement of atomic ordering which indicates the higher strength of spin-orbit coupling and leads to the dominant intrinsic contribution to AHC in these CFA full Heusler alloy thin films.

Anomalous Hall Effect in a Feromagnetic Rare-Earth Cobalite

NASA Technical Reports Server (NTRS)

Samoilov, A. V.; Yeh, N. C.; Vasquez, R. P.

1996-01-01

Rare-Earth manganites and cobalites with the perovskite structure have been a subject of great recent interest because their electrical resistance changes significantly when a magnetic field is applied...we have studied the Hall effect in thin film La(sub 0.5)Ca(sub 0.5)CoO(sub 3) material and have obtained convincing evidence fo the so called anomalous Hall effect, typical for magnetic metals...Our results suggest that near the ferromagnetic ordering temperature, the dominant electron scattering mechanism is the spin fluctuation.

Temperature-driven band inversion in Pb 0.77 Sn 0.23 Se : Optical and Hall effect studies

DOE PAGES

Anand, Naween; Buvaev, Sanal; Hebard, A. F.; ...

2014-12-23

Optical and Hall-effect measurements have been performed on single crystals of Pb₀.₇₇Sn₀.₂₃Se, a IV-VI mixed chalcogenide. The temperature dependent (10–300 K) reflectance was measured over 40–7000 cm⁻¹ (5–870 meV) with an extension to 15,500 cm⁻¹ (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy opticalmore » spectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Thus, density function theory calculation for the electronic band structure also make similar predictions.« less

Unusual Thermal Hall Effect in a Kitaev Spin Liquid Candidate α -RuCl3

NASA Astrophysics Data System (ADS)

Kasahara, Y.; Sugii, K.; Ohnishi, T.; Shimozawa, M.; Yamashita, M.; Kurita, N.; Tanaka, H.; Nasu, J.; Motome, Y.; Shibauchi, T.; Matsuda, Y.

2018-05-01

The Kitaev quantum spin liquid displays the fractionalization of quantum spins into Majorana fermions. The emergent Majorana edge current is predicted to manifest itself in the form of a finite thermal Hall effect, a feature commonly discussed in topological superconductors. Here we report on thermal Hall conductivity κx y measurements in α -RuCl3 , a candidate Kitaev magnet with the two-dimensional honeycomb lattice. In a spin-liquid (Kitaev paramagnetic) state below the temperature characterized by the Kitaev interaction JK/kB˜80 K , positive κx y develops gradually upon cooling, demonstrating the presence of highly unusual itinerant excitations. Although the zero-temperature property is masked by the magnetic ordering at TN=7 K , the sign, magnitude, and T dependence of κx y/T at intermediate temperatures follows the predicted trend of the itinerant Majorana excitations.

Air temperature gradient in large industrial hall

NASA Astrophysics Data System (ADS)

Karpuk, Michał; Pełech, Aleksander; Przydróżny, Edward; Walaszczyk, Juliusz; Szczęśniak, Sylwia

2017-11-01

In the rooms with dominant sensible heat load, volume airflow depends on many factors incl. pre-established temperature difference between exhaust and supply airflow. As the temperature difference is getting higher, airflow volume drops down, consequently, the cost of AHU is reduced. In high industrial halls with air exhaust grids located under the ceiling additional temperature gradient above working zone should be taken into consideration. In this regard, experimental research of the vertical air temperature gradient in high industrial halls were carried out for the case of mixing ventilation system The paper presents the results of air temperature distribution measurements in high technological hall (mechanically ventilated) under significant sensible heat load conditions. The supply airflow was delivered to the hall with the help of the swirl diffusers while exhaust grids were located under the hall ceiling. Basing on the air temperature distribution measurements performed on the seven pre-established levels, air temperature gradient in the area between 2.0 and 7.0 m above the floor was calculated and analysed.

Anomalous Hall effect scaling in ferromagnetic thin films

NASA Astrophysics Data System (ADS)

Grigoryan, Vahram L.; Xiao, Jiang; Wang, Xuhui; Xia, Ke

2017-10-01

We propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.

Piezo Voltage Controlled Planar Hall Effect Devices

PubMed Central

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K. W.; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-01-01

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials. PMID:27329068

Piezo Voltage Controlled Planar Hall Effect Devices.

PubMed

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-06-22

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers

NASA Astrophysics Data System (ADS)

Meng, K. K.; Zhao, X. P.; Liu, P. F.; Liu, Q.; Wu, Y.; Li, Z. P.; Chen, J. K.; Miao, J.; Xu, X. G.; Zhao, J. H.; Jiang, Y.

2018-02-01

We have investigated the topological Hall effect (THE) in MnGa/Pt and MnGa/Ta bilayers induced by the inter- facial Dzyaloshinskii-Moriya interaction (DMI). By varying the growth parameters, we can modulate the domain wall energy, and the largest THE signals are found when the domain wall energy is the smallest. The large topological portion of the Hall signal from the total Hall signal has been extracted in the whole temperature range from 5 to 300 K. These results open up the exploration of the DMI induced magnetic behavior based on the bulk perpendicular magnetic anisotropy materials for fundamental physics and magnetic storage technologies.

Effective anomalous Hall coefficient in an ultrathin Co layer sandwiched by Pt layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Peng; Wu, Di; Jiang, Zhengsheng

2014-02-14

Anomalous Hall effect in Co/Pt multilayer is important to study the effect of interface with strong spin-orbit coupling. However, the shunting effect of the layers in such system and the circuit in the plane perpendicular to the injected current were overlooked in most works and thus, anomalous Hall coefficient in Co/Pt multilayer has not been determined accurately. Considering the shunting effect and the equivalent circuit, we show that the effective anomalous Hall coefficient of a 0.5 nm thick Co layer sandwiched by Pt layers R{sub S} is 0.29 ± 0.01 μΩ cm/T at the zero temperature limit and increases to about 0.73 μΩ cm/T at the temperaturemore » of 300 K. R{sub S} is one order larger than that in bulk Co film, indicating the large contribution of the Co/Pt interface. R{sub S} increases with the resistivity of Co as well as a resistivity independent contribution of −0.23 ± 0.01 μΩ cm/T. The equivalent anomalous Hall current in the Co layer has a maximum of 1.1% of the injected transverse current in the Co layer around the temperature of 80 K.« less

Magnon Spin Nernst Effect in Antiferromagnets.

PubMed

Zyuzin, Vladimir A; Kovalev, Alexey A

2016-11-18

We predict that a temperature gradient can induce a magnon-mediated spin Hall response in an antiferromagnet with nontrivial magnon Berry curvature. We develop a linear response theory which gives a general condition for a Hall current to be well defined, even when the thermal Hall response is forbidden by symmetry. We apply our theory to a honeycomb lattice antiferromagnet and discuss a role of magnon edge states in a finite geometry.

Magnon Spin Nernst Effect in Antiferromagnets

NASA Astrophysics Data System (ADS)

Zyuzin, Vladimir A.; Kovalev, Alexey A.

2016-11-01

We predict that a temperature gradient can induce a magnon-mediated spin Hall response in an antiferromagnet with nontrivial magnon Berry curvature. We develop a linear response theory which gives a general condition for a Hall current to be well defined, even when the thermal Hall response is forbidden by symmetry. We apply our theory to a honeycomb lattice antiferromagnet and discuss a role of magnon edge states in a finite geometry.

Sheath oscillation characteristics and effect on near-wall conduction in a krypton Hall thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Fengkui, E-mail: fengkuizhang@163.com; Kong, Lingyi; Li, Chenliang

2014-11-15

Despite its affordability, the krypton Hall-effect thruster in applications always had problems in regard to performance. The reason for this degradation is studied from the perspective of the near-wall conductivity of electrons. Using the particle-in-cell method, the sheath oscillation characteristics and its effect on near-wall conduction are compared in the krypton and xenon Hall-effect thrusters both with wall material composed of BNSiO{sub 2}. Comparing these two thrusters, the sheath in the krypton-plasma thruster will oscillate at low electron temperatures. The near-wall conduction current is only produced by collisions between electrons and wall, thereby causing a deficiency in the channel current.more » The sheath displays spatial oscillations only at high electron temperature; electrons are then reflected to produce the non-oscillation conduction current needed for the krypton-plasma thruster. However, it is accompanied with intensified oscillations.« less

Enhanced thermoelectric response in the fractional quantum Hall effect

NASA Astrophysics Data System (ADS)

Roura-Bas, Pablo; Arrachea, Liliana; Fradkin, Eduardo

2018-02-01

We study the linear thermoelectric response of a quantum dot embedded in a constriction of a quantum Hall bar with fractional filling factors ν =1 /m within Laughlin series. We calculate the figure of merit Z T for the maximum efficiency at a fixed temperature difference. We find a significant enhancement of this quantity in the fractional filling in relation to the integer-filling case, which is a direct consequence of the fractionalization of the electron in the fractional quantum Hall state. We present simple theoretical expressions for the Onsager coefficients at low temperatures, which explicitly show that Z T and the Seebeck coefficient increase with m .

Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

NASA Astrophysics Data System (ADS)

Shang, T.; Yang, H. L.; Zhan, Q. F.; Zuo, Z. H.; Xie, Y. L.; Liu, L. P.; Zhang, S. L.; Zhang, Y.; Li, H. H.; Wang, B. M.; Wu, Y. H.; Zhang, S.; Li, Run-Wei

2016-10-01

We report an investigation of anomalous-Hall resistance (AHR) and spin-Hall magnetoresistance (SMR) in Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The AHR of Pt/IrMn/YIG heterostructures with an antiferromagnetic inserted layer is dramatically enhanced as compared to that of the Pt/YIG bilayer. The temperature dependent AHR behavior is nontrivial, while the IrMn thickness dependent AHR displays a peak at an IrMn thickness of 3 nm. The observed SMR in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the IrMn layer (≤3 nm) to interact with the ferromagnetic YIG layer. The lack of conventional anisotropic magnetoresistance (AMR) implies that the insertion of the IrMn layer between Pt and YIG could efficiently suppress the magnetic proximity effect (MPE) on induced Pt moments by YIG.

Experimental study of effect of magnetic field on anode temperature distribution in an ATON-type Hall thruster

NASA Astrophysics Data System (ADS)

Liu, Jinwen; Li, Hong; Mao, Wei; Ding, Yongjie; Wei, Liqiu; Li, Jianzhi; Yu, Daren; Wang, Xiaogang

2018-05-01

The energy deposition caused by the absorption of electrons by the anode is an important cause of power loss in a Hall thruster. The resulting anode heating is dangerous, as it can potentially reduce the thruster lifetime. In this study, by considering the ring shape of the anode of an ATON-type Hall thruster, the effects of the magnetic field strength and gradient on the anode ring temperature distribution are studied via experimental measurement. The results show that the temperature distribution is not affected by changes in the magnetic field strength and that the position of the peak temperature is essentially unchanged; however, the overall temperature does not change monotonically with the increase of the magnetic field strength and is positively correlated with the change in the discharge current. Moreover, as the magnetic field gradient increases, the position of the peak temperature gradually moves toward the channel exit and the temperature tends to decrease as a whole, regardless of the discharge current magnitude; in any case, the position of the peak temperature corresponds exactly to the intersection of the magnetic field cusp with the anode ring. Further theoretical analysis shows that the electrons, coming from the ionization region, travel along two characteristic paths to reach the anode under the guidance of the cusped magnetic field configuration. The change of the magnetic field strength or gradient changes the transfer of momentum and energy of the electrons in these two paths, which is the main reason for the changes in the temperature and distribution. This study is instructive for matching the design of the ring-shaped anode and the cusp magnetic field of an ATON-type Hall thruster.

Measurements of dynamo electric field and momentum transport induced by fluctuations on HIST

NASA Astrophysics Data System (ADS)

Hirono, H.; Hanao, T.; Hyobu, T.; Ito, K.; Matsumoto, K.; Nakayama, T.; Kikuchi, Y.; Fukumoto, N.; Nagata, M.

2012-10-01

Coaxial Helicity injection (CHI) is an efficient current-drive method used in spheromak and spherical torus (ST) experiments. It is an important issue to investigate dynamo effect to explore CHI current drive mechanisms. To establish the dynamo model with two-fluid Hall effects, we verify the parallel mean-field Ohm's law balance. The spatial profiles of the MHD/Hall dynamo electric fields are measured by using Mach probe and Hall probe involving 3-axis magnetic pick-up coils. The MHD/Hall fluctuation-induced electromotive forces are large enough to sustain the mean toroidal current against the resistive decay. We have measured the electron temperature and the density with great accuracy by using a new electrostatic probe with voltage sweeping. The result shows that the electron temperature is high in the core region and low in the central open flux column (OFC), and the electron density is highest in the OFC region. The Hall dynamo becomes more dominant in a lower density region compared to the MHD dynamo. In addition, the fluctuation-induced Maxwell and Reynolds stresses are calculated to examine the fast radial transport of momentum from the OFC to the core region during the dynamo drive.

Experimental evidence consistent with a magnon Nernst effect in the antiferromagnetic insulator MnPS3

NASA Astrophysics Data System (ADS)

Shiomi, Y.; Takashima, R.; Saitoh, E.

2017-10-01

A magnon Nernst effect, an antiferromagnetic analog of the magnon Hall effect in ferromagnetic insulators, has been studied experimentally for the layered antiferromagnetic insulator MnPS3 in contact with two Pt strips. Thermoelectric voltage in the Pt strips grown on MnPS3 single crystals exhibits nonmonotonic temperature dependence at low temperatures, which is unlikely to be explained by electronic origins in Pt but can be ascribed to the inverse spin Hall voltage induced by a magnon Nernst effect. Control of antiferromagnetic domains in the MnPS3 crystal by magnetoelectric cooling is found to modulate the low-temperature thermoelectric voltage in Pt, which is evidence consistent with the emergence of the magnon Nernst effect in Pt-MnPS3 hybrid structures.

Evidence of in-plane ferromagnetic order probed by planar Hall effect in the geometry-confined ruthenate S r4R u3O10

NASA Astrophysics Data System (ADS)

Liu, Yan; Yang, Jiyong; Wang, Weike; Du, Haifeng; Ning, Wei; Ling, Langsheng; Tong, Wei; Qu, Zhe; Cao, Gang; Zhang, Yuheng; Tian, Mingliang

2017-04-01

The magnetic structure in the strongly correlated ruthenate S r4R u3O10 has been debated for a long time and still remains elusive. Here, we perform a systematically planar Hall effect study on a single-crystalline S r4R u3O10 nanostripe with a thickness of less than 100 nm. Large sharp switching behavior is observed in the planar Hall resistance, unambiguously indicating a strong anisotropic in-plane ferromagnetic order in the nanostripe, which is in contrast to the bulk system. Temperature-dependent evolution of the in-plane magnetism reveals that the in-plane spin order transforms from a single-domain state below a Curie temperature TC into a multidomain state below a critical temperature TM, probably due to the inherent strong spin-orbit coupling driven reconfiguration of spins between the c axis and the a b plane.

Magnetotransport properties of microstructured AlCu2Mn Heusler alloy thin films in the amorphous and crystalline phase

NASA Astrophysics Data System (ADS)

Barzola-Quiquia, José; Stiller, Markus; Esquinazi, Pablo D.; Quispe-Marcatoma, Justiniano; Häussler, Peter

2018-06-01

We have studied the resistance, magnetoresistance and Hall effect of AlCu2Mn Heusler alloy thin films prepared by flash evaporation on substrates cooled at 4He liquid temperature. The as-prepared samples were amorphous and were annealed stepwise to induce the transformation to the crystalline phase. The amorphous phase is metastable up to above room temperature and the transition to the crystalline phase was observed by means of resistance measurements. Using transmission electron microscopy, we have determined the structure factor S (K) and the pair correlation function g (r) , both results indicate that amorphous AlCu2Mn is an electronic stabilized phase. The X-ray diffraction of the crystallized film shows peaks corresponding to the well ordered L21 phase. The resistance shows a negative temperature coefficient in both phases. The magnetoresistance (MR) is negative in both phases, yet larger in the crystalline state compared to the amorphous one. The magnetic properties were studied further by anomalous Hall effect measurements, which were present in both phases. In the amorphous state, the anomalous Hall effect disappears at temperatures below 175 K and is present up to above room temperature in the case of crystalline AlCu2Mn.

Nontrivial transition of transmission in a highly open quantum point contact in the quantum Hall regime

NASA Astrophysics Data System (ADS)

Hong, Changki; Park, Jinhong; Chung, Yunchul; Choi, Hyungkook; Umansky, Vladimir

2017-11-01

Transmission through a quantum point contact (QPC) in the quantum Hall regime usually exhibits multiple resonances as a function of gate voltage and high nonlinearity in bias. Such behavior is unpredictable and changes sample by sample. Here, we report the observation of a sharp transition of the transmission through an open QPC at finite bias, which was observed consistently for all the tested QPCs. It is found that the bias dependence of the transition can be fitted to the Fermi-Dirac distribution function through universal scaling. The fitted temperature matches quite nicely to the electron temperature measured via shot-noise thermometry. While the origin of the transition is unclear, we propose a phenomenological model based on our experimental results that may help to understand such a sharp transition. Similar transitions are observed in the fractional quantum Hall regime, and it is found that the temperature of the system can be measured by rescaling the quasiparticle energy with the effective charge (e*=e /3 ). We believe that the observed phenomena can be exploited as a tool for measuring the electron temperature of the system and for studying the quasiparticle charges of the fractional quantum Hall states.

Approaching quantum anomalous Hall effect in proximity-coupled YIG/graphene/h-BN sandwich structure

NASA Astrophysics Data System (ADS)

Tang, Chi; Cheng, Bin; Aldosary, Mohammed; Wang, Zhiyong; Jiang, Zilong; Watanabe, K.; Taniguchi, T.; Bockrath, Marc; Shi, Jing

2018-02-01

Quantum anomalous Hall state is expected to emerge in Dirac electron systems such as graphene under both sufficiently strong exchange and spin-orbit interactions. In pristine graphene, neither interaction exists; however, both interactions can be acquired by coupling graphene to a magnetic insulator as revealed by the anomalous Hall effect. Here, we show enhanced magnetic proximity coupling by sandwiching graphene between a ferrimagnetic insulator yttrium iron garnet (YIG) and hexagonal-boron nitride (h-BN) which also serves as a top gate dielectric. By sweeping the top-gate voltage, we observe Fermi level-dependent anomalous Hall conductance. As the Dirac point is approached from both electron and hole sides, the anomalous Hall conductance reaches ¼ of the quantum anomalous Hall conductance 2e2/h. The exchange coupling strength is determined to be as high as 27 meV from the transition temperature of the induced magnetic phase. YIG/graphene/h-BN is an excellent heterostructure for demonstrating proximity-induced interactions in two-dimensional electron systems.

Influence of Mn concentration on magnetic topological insulator Mn xBi 2−xTe 3 thin-film Hall-effect sensor

DOE PAGES

Ni, Y.; Zhang, Z.; Nlebedim, I. C.; ...

2015-06-11

Hall-effect (HE) sensors based on high-quality Mn-doped Bi 2Te 3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi 2Te 3. The sensors with low Mn concentrations, Mn xBi 2-xTe 3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almostmore » eight times as high as that of the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.« less

Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB 4

DOE PAGES

Sunku, Sai Swaroop; Kong, Tai; Ito, Toshimitsu; ...

2016-05-11

We study TmB 4, a frustrated magnet on the Archimedean Shastry-Sutherland lattice, through magnetization and transport experiments. The lack of anisotropy in resistivity shows that TmB4 is an electronically three-dimensional system. The magnetoresistance (MR) is hysteretic at low temperature even though a corresponding hysteresis in magnetization is absent. The Hall resistivity shows unconventional anomalous Hall effect (AHE) and is linear above saturation despite a large MR. In conclusion, we propose that complex structures at magnetic domain walls may be responsible for the hysteretic MR and may also lead to the AHE.

Hall effects on peristalsis of boron nitride-ethylene glycol nanofluid with temperature dependent thermal conductivity

NASA Astrophysics Data System (ADS)

Abbasi, F. M.; Gul, Maimoona; Shehzad, S. A.

2018-05-01

Current study provides a comprehensive numerical investigation of the peristaltic transport of boron nitride-ethylene glycol nanofluid through a symmetric channel in presence of magnetic field. Significant effects of Brownian motion and thermophoresis have been included in the energy equation. Hall and Ohmic heating effects are also taken into consideration. Resulting system of non-linear equations is solved numerically using NDSolve in Mathematica. Expressions for velocity, temperature, concentration and streamlines are derived and plotted under the assumption of long wavelength and low Reynolds number. Influence of various parameters on heat and mass transfer rates have been discussed with the help of bar charts.

Temperature dependence of spin-orbit torques in Pt/Co/Pt multilayers

NASA Astrophysics Data System (ADS)

Chen, Shiwei; Li, Dong; Cui, Baoshan; Xi, Li; Si, Mingsu; Yang, Dezheng; Xue, Desheng

2018-03-01

We studied the current-induced spin-orbit torques in a perpendicularly magnetized Pt (1 nm)/Co (0.8 nm)/Pt (5 nm) heterojunction by harmonic Hall voltage measurements. Owing to similar Pt/Co/Pt interfaces, the spin-orbit torques originated from the Rashba effect are reduced, but the contribution from the spin Hall effect is still retained because of asymmetrical Pt thicknesses. When the temperature increases from 50 to 300 K, two orthogonal components of the effective field, induced by spin-orbit torques, reveal opposite temperature dependencies: the field-like term (transverse effective field) decreases from 2.3 to 2.1 (10-6 Oe (A cm-2)-1), whereas the damping-like term (longitudinal effective field) increases from 3.7 to 4.8 (10-6 Oe (A cm-2)-1). It is noticed that the damping-like term, usually smaller than the field-like term in the similar Pt/Co interfaces, is twice as large as the field-like term. As a result, the damping-like spin-orbit torque reaches an efficiency of 0.15 at 300 K. Such a temperature-dependent damping-like term in a Pt/Co/Pt heterojunction can efficiently reduce the switching current density which is 2.30  ×  106 A cm-2 at 300 K, providing an opportunity to further improve and understand spin-orbit torques induced by spin Hall effect.

Magnetically-related properties of bismuth containing high Tc superconductors

NASA Astrophysics Data System (ADS)

Vezzoli, Gary C.; Chen, M. F.; Craver, F.; Safari, A.; Moon, B. M.; Lalevic, B.; Burke, Terence; Shoga, M.

1990-08-01

The effect of magnetic fields to 15 T on electrical resistance has been measured for the BiSrCaCuO superconductor at precise temperatures during the transition to the superconducting state from pre-onset conditions to essentially zero resistance conditions. The results show that the temperature at which the magnetic field causes a divergence in the resistance versus 1000/ T curve is approximately the same temperature as the value at which, during cooling, the positive Hall coefficient begins its abrupt descent to zero. This temperature gives the best measure of Tc. It is also shown that small oscillations of low frequency start near onset conditions, the amplitude of which at a given temperature is B-field dependent. Additionally, Hall effect studies as a function of temperature at 4 T in three separate experiments (including high Tc BiSrCaCu PbO of > 90% theoretical density) show that sharp delta-function-like peaks in + RH are observed near Tc and are superimposed on a broader maximum. The Hall data are explicable in terms of exciton formation and ionization. The bound holes associated with these excitons are believed to be the mediators producing Cooper-pairing, and scale very well with Tc for all the known high Tc oxides.

A variational theory of Hall effect of Anderson lattice model: Application to colossal magnetoresistance manganites (Re1-x Ax MnO3)

NASA Astrophysics Data System (ADS)

Panwar, Sunil; Kumar, Vijay; Singh, Ishwar

2017-10-01

An anomalous Hall constant RH has been observed in various rare earth manganites doped with alkaline earths namely Re1-xAxMnO3 (where Re = La, Pr, Nd etc., and A = Ca, Sr, Ba etc.) which exhibit colossal magnetoresistance (CMR), metal- insulator transition and many other poorly understood phenomena. We show that this phenomenon of anomalous Hall constant can be understood using two band (ℓ-b) Anderson lattice model Hamiltonian alongwith (ℓ-b) hybridization recently studied by us for manganites in the strong electron-lattice Jahn-Teller (JT) coupling regime an approach similar to the two - fluid models. We use a variational method in this work to study the temperature variation of Hall constant RH (T) in these compounds. We have already used this variational method to study the zero field electrical resistivity ρ (T) and magnetic susceptibility of doped CMR manganites. In the present study, we find that the Hall constant RH (T) reduces with increasing magnetic field parameters h&m and the metal-insulator transition temperature (Tρ) shifts towards higher temperature region. We have also observed the role of the model parameters e.g. local Coulomb repulsion U, Hund's rule coupling JH between eg spins and t2g spins, ferromagnetic nearest neighbor exchange coupling JF between t2g core spins and hybridization Vk between ℓ-polarons and d-electrons on Hall constant RH (T) of these materials at different magnetic fields. Here we find that RH (T) for a particular value of h and m shows a rapid initial increase, followed by a sharp peak at low temperature say 50 K in our case and a slow decrease at high temperatures, resembling with the key feature of many CMR compounds like La0.8Ba0.2 MnO3.The magnitude of RH (T) reduces and the anomaly (sharp peak) in RH becomes broader and shifts towards higher temperature region on increasing Vk or JH or doping x and even vanishes on further increasing these parameters. Our results of anomalous Hall constant (RH) have same qualitative behavior as the zero-field electrical resistivity. Moreover Hall Constant (RH) shows positive values indicating that the carriers in these manganites are holes.

Extremely correlated Fermi liquid theory of the t-J model in 2 dimensions: low energy properties

NASA Astrophysics Data System (ADS)

Shastry, B. Sriram; Mai, Peizhi

2018-01-01

Low energy properties of the metallic state of the two-dimensional t-J model are presented for second neighbor hopping with hole-doping (t\\prime ≤slant 0) and electron-doping (t\\prime > 0), with various superexchange energy J. We use a closed set of equations for the Greens functions obtained from the extremely correlated Fermi liquid theory. These equations reproduce the known low energies features of the large U Hubbard model in infinite dimensions. The density and temperature dependent quasiparticle weight, decay rate and the peak spectral heights over the Brillouin zone are calculated. We also calculate the resistivity, Hall conductivity, Hall number and cotangent Hall angle. The spectral features display high thermal sensitivity at modest T for density n≳ 0.8, implying a suppression of the effective Fermi-liquid temperature by two orders of magnitude relative to the bare bandwidth. The cotangent Hall angle exhibits a T 2 behavior at low T, followed by an interesting kink at higher T. The Hall number exhibits strong renormalization due to correlations. Flipping the sign of t\\prime changes the curvature of the resistivity versus T curves between convex and concave. Our results provide a natural route for understanding the observed difference in the temperature dependent resistivity of strongly correlated electron-doped and hole-doped matter.

Hall effect within the colossal magnetoresistive semimetallic state of MoTe2

NASA Astrophysics Data System (ADS)

Zhou, Qiong; Rhodes, D.; Zhang, Q. R.; Tang, S.; Schönemann, R.; Balicas, L.

2016-09-01

Here, we report a systematic study on the Hall effect of the semimetallic state of bulk MoTe2, which was recently claimed to be a candidate for a novel type of Weyl semimetallic state. The temperature (T ) dependence of the carrier densities and of their mobilities, as estimated from a numerical analysis based on the isotropic two-carrier model, indicates that its exceedingly large and nonsaturating magnetoresistance may be attributed to a near perfect compensation between the densities of electrons and holes at low temperatures. A sudden increase in hole density, with a concomitant rapid increase in the electron mobility below T ˜40 K, leads to comparable densities of electrons and holes at low temperatures suggesting a possible electronic phase transition around this temperature.

A review of the quantum Hall effects in MgZnO/ZnO heterostructures

NASA Astrophysics Data System (ADS)

Falson, Joseph; Kawasaki, Masashi

2018-05-01

This review visits recent experimental efforts on high mobility two-dimensional electron systems (2DES) hosted at the Mg x Zn1-x O/ZnO heterointerface. We begin with the growth of these samples, and highlight the key characteristics of ozone-assisted molecular beam epitaxy required for their production. The transport characteristics of these structures are found to rival that of traditional semiconductor material systems, as signified by the high electron mobility (μ > 1000 000 cm2 Vs‑1) and rich quantum Hall features. Owing to a large effective mass and small dielectric constant, interaction effects are an order of magnitude stronger in comparison with the well studied GaAs-based 2DES. The strong correlation physics results in robust Fermi-liquid renormalization of the effective mass and spin susceptibility of carriers, which in turn dictates the parameter space for the quantum Hall effect. Finally, we explore the quantum Hall effect with a particular emphasis on the spin degree of freedom of carriers, and how their large spin splitting allows control of the ground states encountered at ultra-low temperatures within the fractional quantum Hall regime. We discuss in detail the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic.

Temperature Dependence of the Spin-Hall Conductivity of a Two-Dimensional Impure Rashba Electron Gas in the Presence of Electron-Phonon and Electron-Electron Interactions

NASA Astrophysics Data System (ADS)

Yavari, H.; Mokhtari, M.; Bayervand, A.

2015-03-01

Based on Kubo's linear response formalism, temperature dependence of the spin-Hall conductivity of a two-dimensional impure (magnetic and nonmagnetic impurities) Rashba electron gas in the presence of electron-electron and electron-phonon interactions is analyzed theoretically. We will show that the temperature dependence of the spin-Hall conductivity is determined by the relaxation rates due to these interactions. At low temperature, the elastic lifetimes ( and are determined by magnetic and nonmagnetic impurity concentrations which are independent of the temperature, while the inelastic lifetimes ( and related to the electron-electron and electron-phonon interactions, decrease when the temperature increases. We will also show that since the spin-Hall conductivity is sensitive to temperature, we can distinguish the intrinsic and extrinsic contributions.

Nonlinear Hall effect and multichannel conduction in LaTiO3/SrTiO3 superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jun Sung; Seo, Sung Seok A; Chisholm, Matthew F

2010-01-01

We report magnetotransport properties of heterointerfaces between the Mott insulator LaTiO{sub 3} and the band insulator SrTiO{sub 3} in a delta-doping geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduction of interfacial charges generated by an electronic reconstruction. In particular, the formation of a highly mobile conduction channel revealed by our data is explained by the greatly increased dielectric permeability of SrTiO{sub 3} at low temperatures and its electric fieldmore » dependence reflects the spatial distribution of the quasi-two-dimensional electron gas.« less

Annealing effect on current-driven domain wall motion in Pt/[Co/Ni] wire

NASA Astrophysics Data System (ADS)

Furuta, Masaki; Liu, Yang; Sepehri-Amin, Hossein; Hono, Kazuhiro; Zhu, Jian-Gang Jimmy

2017-09-01

The annealing effect on the efficiency of current-driven domain wall motion governed by the spin Hall effect in perpendicularly magnetized Pt/[Co/Ni] wires is investigated experimentally. Important physical parameters, such as the Dzyaloshinskii-Moriya Interaction (DMI), spin Hall angle, and perpendicular anisotropy field strength, for the domain wall motion are all characterized at each annealing temperature. It is found that annealing of wires at temperatures over 120 °C causes significant reduction of the domain wall velocity. Energy dispersive X-ray spectroscopy analysis shows pronounced Co diffusion across the Pt/Co interface resulted from annealing at relatively high temperatures. The combined modeling study shows that the reduction of DMI caused by annealing is mostly responsible for the domain wall velocity reduction due to annealing.

Magnetometory of AlGaN/GaN heterostructure wafers

NASA Astrophysics Data System (ADS)

Tsubaki, K.; Maeda, N.; Saitoh, T.; Kobayashi, N.

2005-06-01

AlGaN/GaN heterostructure wafers are becoming a key technology for next generation cellar-phone telecommunication system because of their potential for high-performance microwave applications. Therefore, the electronic properties of a 2DEG in AlGaN/GaN heterostructures have recently been discussed. In this paper, we performed the extraordinary Hall effect measurement and the SQUID magnetometory of AlGaN/GaN heterostructure wafer at low temperature. The AlGaN/GaN heterostructures were grown by low-pressure metal-organic chemical vapour phase epitaxy on (0001) SiC substrate using AlN buffers. The electron mobility and electron concentration at 4.2 K are 9,540cm2/V s and 6.6 × 1012cm-2, respectively. In the extraordinary Hall effect measurement of AlGaN/GaN heterostructures, the hysteresis of Hall resistance appeared below 4.5 K and disappeared above 4.5 K. On the other hand, the hysteresis of magnetometric data obtained by SQUID magnetometory appears near zero magnetic field when the temperature is lower than 4.5 K. At the temperature larger than 4.5 K, the hysteresis of magnetometric data disappears. And the slopes of magnetometric data with respect to magnetic field become lower as obeying Currie-Weiss law and the Curie temperature TC is 4.5 K. Agreement of TC measured by the extraordinary Hall effect and the SQUID magnetometory implies the ferromagnetism at the AlGaN/GaN heterojunction. However, the conformation of the ferromagnetism of AlGaN/GaN heterostructure is still difficult and the detailed physical mechanism is still unclear.

Valley Hall effect and Nernst effect in strain engineered graphene

NASA Astrophysics Data System (ADS)

Niu, Zhi Ping; Yao, Jian-ming

2018-04-01

We theoretically predict the existence of tunneling valley Hall effect and Nernst effect in the normal/strain/normal graphene junctions, where a strained graphene is sandwiched by two normal graphene electrodes. By applying an electric bias a pure transverse valley Hall current with longitudinal charge current is generated. If the system is driven by a temperature bias, a valley Nernst effect is observed, where a pure transverse valley current without charge current propagates. Furthermore, the transverse valley current can be modulated by the Fermi energy and crystallographic orientation. When the magnetic field is further considered, we obtain a fully valley-polarized current. It is expected these features may be helpful in the design of the controllable valleytronic devices.

Electrical transport properties in Co nanocluster-assembled granular film

NASA Astrophysics Data System (ADS)

Zhang, Qin-Fu; Wang, Lai-Sen; Wang, Xiong-Zhi; Zheng, Hong-Fei; Liu, Xiang; Xie, Jia; Qiu, Yu-Long; Chen, Yuanzhi; Peng, Dong-Liang

2017-03-01

A Co nanocluster-assembled granular film with three-dimensional cross-connection paralleled conductive paths was fabricated by using the plasma-gas-condensation method in a vacuum environment. The temperature-dependent longitudinal resistivity and anomalous Hall effect of this new type granular film were systematically studied. The longitudinal resistivity of the Co nanocluster-assembled granular film first decreased and then increased with increasing measuring temperature, revealing a minimum value at certain temperature, T min . In a low temperature region ( T < T min ), the barrier between adjacent nanoclusters governed the electrical transport process, and the temperature coefficient of resistance (TCR) showed an insulator-type behavior. The thermal fluctuation-induced tunneling conduction progressively increased with increasing temperature, which led to a decrease in the longitudinal resistivity. In a high temperature region, the TCR showed a metallic-type behavior, which was primarily attributed to the temperature-dependent scattering. Different from the longitudinal resistivity behavior, the saturated anomalous Hall resistivity increased monotonically with increasing measuring temperature. The value of the anomalous Hall coefficient ( R S ) reached 2.3 × 10-9 (Ω cm)/G at 300 K, which was about three orders of magnitude larger than previously reported in blocky single-crystal Co [E. N. Kondorskii, Sov. Phys. JETP 38, 977 (1974)]. Interestingly, the scaling relation ( ρx y A ∝ ρx x γ ) between saturated anomalous Hall resistivity ( ρx y A ) and longitudinal resistivity ( ρ x x ) was divided into two regions by T min . However, after excluding the contribution of tunneling, the scaling relation followed the same rule. The corresponding physical mechanism was also proposed to explain these phenomena.

High-Efficiency Helical Coil Electromagnetic Launcher and High Power Hall-Effect Switch

DTIC Science & Technology

2008-02-29

also given that demonstrate significant launcher performance benefits by super-cooling the armature (i.e., using liquid nitrogen ). 14. ABSTRACT... liquid nitrogen temperatures). A computer model for a magnetically-controlled Hall-effect switch is developed. The model is constructed in the PSpice...of super-cooling is demonstrated with liquid nitrogen cooling and indicates super-cooled EML operation is desirable if cryo-cooling is practical for

Temperature dependence of the enhanced inverse spin Hall voltage in Pt/Antiferromagnetic/ Y3Fe5O12

NASA Astrophysics Data System (ADS)

Brangham, J. T.; Lee, A. J.; Cheng, Y.; Yu, S. S.; Dunsiger, S. R.; Page, M. R.; Hammel, P. C.; Yang, F. Y.

The generation, propagation, and detection of spin currents are of intense interest in the field of spintronics. Spin current generation by FMR spin pumping using Y3Fe5O12 (YIG) and spin current detection by the inverse spin Hall effect (ISHE) in metals such as Pt have been well studied. This is due to YIG's exceptionally low damping and insulating behavior and the large spin Hall angle of Pt. Previously, our group showed that the ISHE voltages are significantly enhanced by adding a thin intermediate layer of an antiferromagnet (AFM) between Pt and YIG at room temperature. Recent theoretical work predicts a mechanism for this enhancement as well as the temperature dependence of the ISHE voltages of metal/AFM/YIG trilayers. The predictions show a maximum in the ISHE voltages for these systems near the magnetic phase transition temperature of the AFM. Here we present experimental results showing the temperature dependence for Pt/AFM/YIG structures with various AFMs. DOE Grant No. DE-SC0001304.

A highly sensitive CMOS digital Hall sensor for low magnetic field applications.

PubMed

Xu, Yue; Pan, Hong-Bin; He, Shu-Zhuan; Li, Li

2012-01-01

Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ± 2 mT magnetic field and output a digital Hall signal in a wide temperature range from -40 °C to 120 °C.

Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

NASA Astrophysics Data System (ADS)

Savero Torres, W.; Sierra, J. F.; Benítez, L. A.; Bonell, F.; Costache, M. V.; Valenzuela, S. O.

2017-12-01

Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.

Magnetic Reconnection and Modification of the Hall Physics Due to Cold Ions at the Magnetopause

NASA Technical Reports Server (NTRS)

Andre, M.; Li, W.; Toldeo-Redondo, S.; Khotyaintsev, Yu. V.; Vaivads, A.; Graham, D. B.; Norgren, C.; Burch, J.; Lindqvist, P.-A.; Marklund, G.;

High temperature hall effect measurement system design, measurement and analysis

NASA Astrophysics Data System (ADS)

Berkun, Isil

A reliable knowledge of the transport properties of semiconductor materials is essential for the development and understanding of a number of electronic devices. In this thesis, the work on developing a Hall Effect measurement system with software based data acqui- sition and control for a temperature range of 300K-700K will be described. A system was developed for high temperature measurements of materials including single crystal diamond, poly-crystalline diamond, and thermoelectric compounds. An added capability for monitor- ing the current versus voltage behavior of the contacts was used for studying the influence of ohmic and non-ohmic contacts on Hall Effect measurements. The system has been primar- ily used for testing the transport properties of boron-doped single crystal diamond (SCD) deposited in a microwave plasma-assisted chemical vapor deposition (MPCVD) reactor [1]. Diamond has several outstanding properties that are of high interest for its development as an electronic material. These include a relatively wide band gap of 5.5 (eV), high thermal conductivity, high mobility, high saturation velocity, and a high breakdown voltage. For a temperature range of 300K-700K, IV curves, Hall mobilities and carrier concentrations are shown. Temperature dependent Hall effect measurements have shown carrier concentrations from below 1017cm --3 to approximately 1021 cm--3 with mobilities ranging from 763( cm2/V s) to 0.15(cm 2/V s) respectively. Simulation results have shown the effects of single and mixed carrier models, activation energies, effective mass and doping concentrations. These studies have been helpful in the development of single crystal diamond for diode applications. Reference materials of Ge and GaAs were used to test the Hall Effect system. The system was also used to characterize polycrystalline diamond deposited on glass for electrochemical applications, and Mg2(Si,Sn) compounds which are promising candidates of low-cost, light weight and non-toxic thermoelectric materials made from abundant elements and are suited for power generation application in the intermediate temperature range of (600 K - 800 K). In this work the thermoelectric materials were synthesized by a solid-state reac- tion using a molten-salt sealing method. The ingots produced were then powder processed, followed by pulsed electric sintering (PECS) densification. A set of Mg2.08Si0.4--x Sn0.6Sbx (0 ≤ x ≤ 0.072) compounds were investigated and a peak ZT of 1.50 was obtained at 716 K in Mg2.08Si 0.364Sn0.6Sb0.036 [2]. The high ZT value is related to a high electrical conductivity in these samples, which are possibly caused by a magnesium deficiency in the final prod- uct. Analysis of the measured results using LabVIEW and MATLAB developed programs showed good agreement with expected results and gave insight on mixed carrier dopant concentrations. [1] I. Berkun, S. N. Demlow, N. Suwanmonkha, T. P. Hogan, and T. A. Grotjohn, "Hall Effect Measurement System for Characterization of Doped Single Crystal Diamond," in MRS Proceedings, vol. 1511, Cambridge Univ Press, 2013. [2] P. Gao, I. Berkun, R. D. Schmidt, M. F. Luzenski, X. Lu, P. B. Sarac, E. D. Case, and T. P. Hogan, "Transport and Mechanical Properties of High-ZT Mg2. 08si0. 4- x Sn0. 6sb x Thermoelectric Materials," Journal of Electronic Materials, pp. 1--14, 2013.

Investigation of linearity of the ITER outer vessel steady-state magnetic field sensors at high temperature

NASA Astrophysics Data System (ADS)

Entler, S.; Duran, I.; Kocan, M.; Vayakis, G.

2017-07-01

Three vacuum vessel sectors in ITER will be instrumented by the outer vessel steady-state magnetic field sensors. Each sensor unit features a pair of metallic Hall sensors with a sensing layer made of bismuth to measure tangential and normal components of the local magnetic field. The influence of temperature and magnetic field on the Hall coefficient was tested for the temperature range from 25 to 250 oC and the magnetic field range from 0 to 0.5 T. A fit of the Hall coefficient normalized temperature function independent of magnetic field was found, and a model of the Hall coefficient functional dependence at a wide range of temperature and magnetic field was built with the purpose to simplify the calibration procedure.

Dependence of defect introduction on temperature and resistivity and some long-term annealing effects

NASA Technical Reports Server (NTRS)

Brucker, G. J.

1971-01-01

The effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.

Topological aspect and the pairing symmetries on spin-triplet chiral p-wave superconductor under strain

NASA Astrophysics Data System (ADS)

Imai, Yoshiki; Sigrist, Manfred

2018-05-01

Motivated by recent experiments on Sr2RuO4, the effect of uniaxial strain on the chiral p-wave superconductor is discussed. We study particularly the relation between the topological indices and different pairing states in the superconducting phase through the thermal Hall conductivity, which is proportional to temperature and the Chern number in the very low-temperature limit. We show that the temperature-dependence of the thermal Hall conductivity under uniaxial strain depends strongly on the form of the pairing state. The obtained result may provide a possible experimental probe for the pairing structure in Sr2RuO4.

The effect of a Cr addition and transformation temperature on the mechanical properties of cold drawn hyper-eutectoid steel wires

NASA Astrophysics Data System (ADS)

Song, Hyung Rak; Kang, Eui Goo; Bae, Chul Min; Lee, Choong Yeol; Lee, Duk Lak; Nam, Won Jong

2006-06-01

The effects of a Cr addition and transformation temperature on the strength and work hardening behavior of cold drawn hyper-eutectoid steel wires are investigated in this study. The Cr addition was found to be effective for increasing the tensile strength and work hardening rate, k/(2 λ°)1/2, due to the refinement of the initial interlamellar spacing and the increment of the Hall-Petch parameter. While the work hardening rate, k/(2 λ°)1/2, was significantly influenced by the magnitude of the interlamellar spacing, the Hall-Petch parameter, k, was not affected by the interlamellar spacing. Additionally, the refinement of the interlamellar spacing due to the low transformation temperature and the Cr addition caused an increase of the RA in drawn pearlitic steels.

Enhanced inverse spin Hall contribution at high microwave power levels in La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrRuO{sub 3} epitaxial bilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haidar, S. M., E-mail: haidar@imr.tohoku.ac.jp; Lustikova, J.; Shiomi, Y.

2015-10-12

We have investigated microwave power dependence of dc voltage generated upon ferromagnetic resonance in a La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrRuO{sub 3} epitaxial bilayer film at room temperature. With increasing microwave power above ∼75 mW, the magnitude of the voltage signal decreases as the sample temperature approaches the Curie temperature of La{sub 0.67}Sr{sub 0.33}MnO{sub 3} due to heating effects. By analyzing the dependence of the voltage signal on the direction of the magnetic field, we show that with increasing microwave power the contribution from the inverse spin Hall effect becomes more dominant than that from the anisotropic magnetoresistance effect.

Suppression of the Hall number due to charge density wave order in high-Tc cuprates

NASA Astrophysics Data System (ADS)

Sharma, Girish; Nandy, S.; Taraphder, A.; Tewari, Sumanta

2018-05-01

Understanding the pseudogap phase in hole-doped high-temperature cuprate superconductors remains a central challenge in condensed-matter physics. From a host of recent experiments there is now compelling evidence of translational-symmetry-breaking charge density wave (CDW) order in a wide range of doping inside this phase. Two distinct types of incommensurate charge order, bidirectional at zero or low magnetic fields and unidirectional at high magnetic fields close to the upper critical field Hc 2, have been reported so far in approximately the same doping range between p ≃0.08 and p ≃0.16 . In concurrent developments, recent high-field Hall experiments have also revealed two indirect but striking signatures of Fermi surface reconstruction in the pseudogap phase, namely, a sign change of the Hall coefficient to negative values at low temperatures in the intermediate range of hole doping and a rapid suppression of the positive Hall number without a change in sign near optimal doping p ˜0.19 . We show that the assumption of a unidirectional incommensurate CDW (with or without a coexisting weak bidirectional order) at high magnetic fields near optimal doping and the coexistence of both types of orders of approximately equal magnitude at high magnetic fields in the intermediate range of doping may help explain the striking behavior of the low-temperature Hall effect in the entire pseudogap phase.

Large thermal Hall effect in a frustrated pyrochlore magnet

NASA Astrophysics Data System (ADS)

Hirschberger, Max; Krizan, Jason; Cava, Robert J.; Ong, N. Phuan

2015-03-01

In frustrated magnetism, the nature of the ground state and its elementary excitations are a matter of considerable debate. We present a detailed study of the full thermal conductivity tensor κij, including the Righi-Leduc (or thermal Hall) effect, in single crystals of the frustrated quantum spin-ice pyrochlore Tb2Ti2O7. The off-diagonal response κxy / T is large in this insulating material, despite the absence of itinerant electrons experiencing the Lorentz force. Our experiments over the temperature range of 0 . 8 - 200 K and in fields up to 14 T reveal a remarkable phenomenology: A sizeable field-linear Hall effect κxy / T is observed below 100 K, and its slope with respect to magnetic field increases strongly as we cool the sample. We observe significant curvature in the field dependence of κxy / T below 15 K. At the lowest temperatures, both κxx / T and the initial slope limB-->0 [κxy / TB ] are constant in temperature, behavior reminiscent of fermionic heat conduction in dirty metals. Experimental methods and verification of the intrinsic nature of the effect will be discussed. R.J.C. and N.P.O. are supported by a MURI Grant (ARO W911NF-12-1-0461) and by the US National Science Foundation (Grant Number DMR 0819860).

Interface induced ferromagnetism in topological insulator above room temperature

NASA Astrophysics Data System (ADS)

Tang, Chi; Chang, Cui-Zu; Liu, Yawen; Chen, Tingyong; Moodera, Jagadeesh; Shi, Jing

The quantum anomalous Hall effect (QAHE) observed in magnetic topological insulators (TI), an outcome of time reversal symmetry broken surface states, exhibits many exotic properties. However, a major obstacle towards high temperature QAHE is the low Curie temperature in the disordered magnetically doped TI systems. Here we report a study on heterostructures of TI and magnetic insulator in which the magnetic insulator, namely thulium iron garnet or TIG, has perpendicular magnetic anisotropy. At the TIG/TI interface, TIG magnetizes the surface states of the TI film by exchange coupling, as revealed by the anomalous Hall effect (AHE). We demonstrate that squared AHE hysteresis loops persist well above room temperature. The interface proximity induced high-temperature ferromagnetism in topological insulators opens up new possibilities for the realization of QAHE at high temperatures. This work was supported as part of the SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award # SC0012670.

Interpretation of transport measurements in ZnO-thin films

NASA Astrophysics Data System (ADS)

Petukhov, Vladimir; Stoemenos, John; Rothman, Johan; Bakin, Andrey; Waag, Andreas

2011-01-01

In order to interpret results of temperature dependent Hall measurements in heteroepitaxial ZnO-thin films, we adopted a multilayer conductivity model considering carrier-transport through the interfacial layer with degenerate electron gas as well as the upper part of ZnO layers with lower conductivity. This model was applied to the temperature dependence of the carrier concentration and mobility measured by Hall effect in a ZnO-layer grown on c-sapphire with conventional high-temperature MgO and low-temperature ZnO buffer. We also compared our results with the results of maximum entropy mobility-spectrum analysis (MEMSA). The formation of the highly conductive interfacial layer was explained by analysis of transmission electron microscopy (TEM) images taken from similar layers.

Chills

MedlinePlus

... Accessed February 20, 2017. Hall JE. Body temperature regulation and fever. In: Hall JE, ed. Guyton and Hall Textbook of Medical Physiology . 13th ed. Philadelphia, PA: Elsevier; 2016:chap 74. ...

Chirality-induced magnon transport in AA-stacked bilayer honeycomb chiral magnets.

PubMed

Owerre, S A

2016-11-30

In this Letter, we study the magnetic transport in AA-stacked bilayer honeycomb chiral magnets coupled either ferromagnetically or antiferromagnetically. For both couplings, we observe chirality-induced gaps, chiral protected edge states, magnon Hall and magnon spin Nernst effects of magnetic spin excitations. For ferromagnetically coupled layers, thermal Hall and spin Nernst conductivities do not change sign as function of magnetic field or temperature similar to single-layer honeycomb ferromagnetic insulator. In contrast, for antiferromagnetically coupled layers, we observe a sign change in the thermal Hall and spin Nernst conductivities as the magnetic field is reversed. We discuss possible experimental accessible honeycomb bilayer quantum materials in which these effects can be observed.

Hall effect measurements of high-quality M n3CuN thin films and the electronic structure

NASA Astrophysics Data System (ADS)

Matsumoto, Toshiki; Hatano, Takafumi; Urata, Takahiro; Iida, Kazumasa; Takenaka, Koshi; Ikuta, Hiroshi

2017-11-01

The physical properties of M n3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (TC) and a sign change of the Hall coefficient at TC. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below TC, which is discussed in relation to the electronic structure of this material.

The effects of temperature dependent recombination rates on performance of InGaN/GaN blue superluminescent light emitting diodes

NASA Astrophysics Data System (ADS)

Moslehi Milani, N.; Mohadesi, V.; Asgari, A.

2015-07-01

The effects of temperature dependent radiative and nonradiative recombination (Shockley-Read-Hall, spontaneous radiative, and Auger coefficients) on the spectral and power characteristics of a blue multiple quantum well (MQW) superluminescent light emitting diode (SLD or SLED) have been studied. The study is based on the rate equations model, where three rate equations corresponding to MQW active region, separate confinement heterostructure (SCH) layer, and spectral density of optical power are solved self-consistently with no k-selection energy dependent gain and quasi-Fermi level functions at steady state. We have taken into account the temperature effects on Shockley-Read-Hall (SRH), spontaneous radiative, and Auger recombination in the rate equations and have investigated the effects of temperature rising from 300 K to 375 K at a fixed current density. We examine this procedure for a moderate current density and interpret the spectral radiation power and light output power diagrams. The investigation reveals that the main loss due to temperature is related to Auger coefficient.

Transport, Optical, and Magnetic Properties of the Conducting Halide Perovskite CH 3NH 3SnI 3

NASA Astrophysics Data System (ADS)

Mitzi, D. B.; Feild, C. A.; Schlesinger, Z.; Laibowitz, R. B.

1995-01-01

A low-temperature ( T ≤ 100°C) solution technique is described for the preparation of polycrystalline and single crystal samples of the conducting halide perovskite, CH 3NH 3SnI 3. Transport, Hall effect, magnetic, and optical properties are examined over the temperature range 1.8-300 K, confirming that this unusual conducting halide perovskite is a low carrier density p-type metal with a Hall hole density, 1/ RHe ≃ 2 × 10 19 cm -3. The resistivity of pressed pellet samples decreases with decreasing temperature with resistivity ratio ρ(300 K)/ρ(2 K) ≃ 3 and room temperature resistivity ρ(300 K) ≃ 7 mΩ-cm. A free-carrier infrared reflectivity spectrum with a plasma edge observed at approximately 1600 cm -1 further attests to the metallic nature of this compound and suggests a small optical effective mass, m* ≃ 0.2.

Characterization of background carriers in InAs/GaSb quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Junbin; Wu, Xiaoguang; Wang, Guowei

2016-03-07

The origin of the background carriers in an undoped InAs/GaSb quantum well (QW) at temperatures between 40 K and 300 K has been investigated using conventional Hall measurements. It is found that the Hall coefficient changes its sign at around 200 K, indicating that both electrons and holes exist in the quantum well. The two-carrier Hall model is thus adopted to analyze the Hall data, which enables the temperature dependence of the carrier density to be obtained. It is found that considerable numbers of holes exist under low temperature conditions (<40 K) in the InAs/GaSb QW, and the hole density is one to twomore » orders higher than that of the electrons within the experimental temperature range. The origin of these low temperature holes and the temperature-dependent behavior of the carrier density over the entire experimental temperature range are then discussed.« less

Thermal Hall conductivity in the spin-triplet superconductor with broken time-reversal symmetry

NASA Astrophysics Data System (ADS)

Imai, Yoshiki; Wakabayashi, Katsunori; Sigrist, Manfred

2017-01-01

Motivated by the spin-triplet superconductor Sr2RuO4 , the thermal Hall conductivity is investigated for several pairing symmetries with broken time-reversal symmetry. In the chiral p -wave phase with a fully opened quasiparticle excitation gap, the temperature dependence of the thermal Hall conductivity has a temperature linear term associated with the topological property directly and an exponential term, which shows a drastic change around the Lifshitz transition. Examining f -wave states as alternative candidates with d =Δ0z ̂(kx2-ky2) (kx±i ky) and Δ0z ̂kxky(kx±i ky) with gapless quasiparticle excitations, we study the temperature dependence of the thermal Hall conductivity, where for the former state the thermal Hall conductivity has a quadratic dependence on temperature, originating from the linear dispersions, in addition to linear and exponential behavior. The obtained result may enable us to distinguish between the chiral p -wave and f -wave states in Sr2RuO4 .

Silicon-based microfabricated tin oxide gas sensor incorporating use of Hall effect measurement

NASA Astrophysics Data System (ADS)

Hammond, Joseph Wilson

2000-10-01

Characterization of a microfabricated sol-gel derived nano-particle tin oxide thin film on a silicon substrate, through simultaneous measurement of conductivity, Hall mobility and electron density, had not been accomplished before this study. Conductivity is a function of carrier density and Hall mobility. Therefore, a full understanding of the sensing mechanism of tin oxide requires knowledge of the sensor conductivity, electron density and Hall mobility. A tin oxide thin film (1100A thick), derived by the sol-gel method, was deposited on a Si/SiO2 substrate by means of spin coating method. The sol-gel method produces films of porous interconnected nano-sized particles and is relatively inexpensive and easy to produce compared to existing methods of tin oxide thin film deposition. A goal of this study was to determine the compatibility of sol-gel derived tin oxide thin films with silicon based microfabrication procedures. It was determined that conductivity sensitivity is strongly dependant on electron density level and shows very weak dependence on Hall mobility. Lack of Hall mobility sensitivity to H2 concentration suggests that conduction is grain control limited. In this regime, in which the grain size (D) is less than twice the characteristic Debye length (LD), a change in reducing gas concentration results in a nearly simultaneous change in carrier density throughout the entire grain, while the Hall mobility remains unchanged. The sensor calcined at 500°C and operated at 250°C showed maximum conductivity sensitivity to H2 in air. The sensor exhibited a high conductivity sensitivity of 10.6 to 100ppm H2 in air with response time of (˜1) minute and recovery time of (˜4) minutes. Images of the thin film surface, obtained by SEM, were used to study the effects of calcination temperature and operating conditions on the tin oxide structure. Sensitivity decreased as average grain size increased from 7.7nm to 14.7nm, with increasing calcination temperature from 500°C to 800°C. The sensors displayed slight drift in long term baseline stability and good long term sensitivity stability (14 days). Long term operation (30 days) at elevated temperatures had no noticeable effect on the thin film structure.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bestwick, A. J.; Fox, E. J.; Kou, Xufeng

In this study, we report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in the Hall resistance to within a part per 10,000 and a longitudinal resistivity under 1 Ω per square, with chiral edge transport explicitly confirmed by nonlocal measurements. Deviations from this behavior are found to be caused by thermally activated carriers, as indicated by an Arrhenius law temperature dependence. Using the deviations as a thermometer, we demonstrate an unexpected magnetocaloric effect and use it to reach near-perfect quantization bymore » cooling the sample below the dilution refrigerator base temperature in a process approximating adiabatic demagnetization refrigeration.« less

Elastic gauge fields and Hall viscosity of Dirac magnons

NASA Astrophysics Data System (ADS)

Ferreiros, Yago; Vozmediano, María A. H.

2018-02-01

We analyze the coupling of elastic lattice deformations to the magnon degrees of freedom of magnon Dirac materials. For a honeycomb ferromagnet we find that, as happens in the case of graphene, elastic gauge fields appear coupled to the magnon pseudospinors. For deformations that induce constant pseudomagnetic fields, the spectrum around the Dirac nodes splits into pseudo-Landau levels. We show that when a Dzyaloshinskii-Moriya interaction is considered, a topological gap opens in the system and a Chern-Simons effective action for the elastic degrees of freedom is generated. Such a term encodes a phonon Hall viscosity response, entirely generated by quantum fluctuations of magnons living in the vicinity of the Dirac points. The magnon Hall viscosity vanishes at zero temperature, and grows as temperature is raised and the states around the Dirac points are increasingly populated.

Unsteady Heat and Mass Transfer of Chemically Reacting Micropolar Fluid in a Porous Channel with Hall and Ion Slip Currents

PubMed Central

2014-01-01

This paper presents an incompressible two-dimensional heat and mass transfer of an electrically conducting micropolar fluid flow in a porous medium between two parallel plates with chemical reaction, Hall and ion slip effects. Let there be periodic injection or suction at the lower and upper plates and the nonuniform temperature and concentration at the plates are varying periodically with time. The flow field equations are reduced to nonlinear ordinary differential equations using similarity transformations and then solved numerically by quasilinearization technique. The profiles of velocity components, microrotation, temperature distribution and concentration are studied for different values of fluid and geometric parameters such as Hartmann number, Hall and ion slip parameters, inverse Darcy parameter, Prandtl number, Schmidt number, and chemical reaction rate and shown in the form of graphs. PMID:27419211

Low-temperature magnetotransport of the narrow-gap semiconductor FeSb2

NASA Astrophysics Data System (ADS)

Takahashi, H.; Okazaki, R.; Yasui, Y.; Terasaki, I.

2011-11-01

We present a study of the magnetoresistance and Hall effect in the narrow-gap semiconductor FeSb2 at low temperatures. Both the electrical and Hall resistivities show unusual magnetic field dependence in the low-temperature range where a large Seebeck coefficient was observed. By applying a two-carrier model, we find that the carrier concentration decreases from 1 down to 10-4 ppm/unit cell and the mobility increases from 2000 to 28 000 cm2/Vs with decreasing temperature from 30 down to 4 K. At lower temperatures, the magnetoresistive behavior drastically changes and a negative magnetoresistance is observed at 3 K. These low-temperature behaviors are reminiscent of the low-temperature magnetotransport observed in doped semiconductors such as As-doped Ge, which is well described by a weak-localization picture. We argue a detailed electronic structure in FeSb2 inferred from our observations.

Hall effects on unsteady MHD flow of second grade fluid through porous medium with ramped wall temperature and ramped surface concentration

NASA Astrophysics Data System (ADS)

VeeraKrishna, M.; Chamkha, Ali J.

2018-05-01

The heat generation/absorption and thermo-diffusion on an unsteady free convective MHD flow of radiating and chemically reactive second grade fluid near an infinite vertical plate through a porous medium and taking the Hall current into account have been studied. Assume that the bounding plate has a ramped temperature with a ramped surface concentration and isothermal temperature with a ramped surface concentration. The analytical solutions for the governing equations are obtained by making use of the Laplace transforms technique. The velocity, temperature, and concentration profiles are discussed through graphs. We also found that velocity, temperature, and concentration profiles in the case of ramped temperature with ramped surface concentrations are less than those of isothermal temperature with ramped surface concentrations. Also, the expressions of the skin friction, Nusselt number, and Sherwood number are obtained and represented computationally through a tabular form.

Effects of growth temperatures on the physical properties of Cu2ZnSnS4 thin films deposited through spray pyrolysis for solar cell applications

NASA Astrophysics Data System (ADS)

Fadavieslam, M. R.; Keshavarz, S.

2018-02-01

This paper reports the effects of substrate temperature on the structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films deposited on soda lime glass through spray pyrolysis without sulfurization. Substrate temperatures ranged from 250 to 500 °C at a step of 50 °C, and a precursor solution was prepared by dissolving copper chloride, zinc acetate, zinc chloride, and thiourea in ethanol and di-ionized water. The films were characterized through X-ray diffraction (XRD), field emission scanning electron microscopy, ultraviolet-visible spectroscopy, and electrical resistance and Hall effect measurements, respectively, obtained by two-point probe and van der Pauw techniques. XRD revealed the formation of polycrystalline CZTS thin films and the appearance of relatively intense and sharp diffraction peaks at (112), (200), (220), and (312) of a kesterite phase with (112) preferential orientation, in which the crystalline degree increased as substrate temperature increased. Surface morphological analysis demonstrated the formation of a smooth, compact, and uniform CZTS surface. When substrate temperature increased from 250 to 500 °C, single-crystal grains increased from 6.38 to 28 nm, carrier concentration increased from 3.4 × 1017 to 2.36 × 1019 cm-3, Hall mobility increased from 30.96 to 68.52 cm2/V.S, optical band gap decreased from 1.74 to 1.14 eV, and resistivity decreased from 0.59 to 3.87 × 10-3 Ωcm. Hall effect analysis indicated that the films exhibited p-type conductivity.

Applying Energy Conservation Retrofits to Standard Army Buildings: Project Design and Initial Energy Data

DTIC Science & Technology

1988-07-01

Window Area 33 24 New Exterior Doors of Dining Hall 34 25 New Window Panels of Dining Hall 34 I 26 New Pneumatic Reset Controllers of Dining Hall 35 27...of conditioned air that is exhausted from the building soace during hood operation. HW temperature reset A new heating system controller from Taylor...to be as high. The converse is true as outdoor temperatures get colder. Resetting the temperature of the heating hot water with changes in the outdoor

Synthesis of n-type semiconductor diamond single crystal under high pressure and high temperature

NASA Astrophysics Data System (ADS)

Li, Yong; Li, Shangsheng; Song, Mousheng; She, Yanchao; Wang, Qiang; Guan, Xuemao

2017-12-01

In this paper, diamond single crystal co-doped with sulfur and boron was successfully synthesized at the fixed pressure of 6.0 GPa and temperature range of 1535 K. Sulfur was detected in the co-doped diamond by Fourier Transform Infrared Spectroscopy (FTIR) and the corresponding characteristic peak located at 848 cm-1. Interestingly, Hall effect measurements indicated that the diamond co-doped with sulfur and boron exhibited n-type semiconductor behaviour. Furthermore, the Hall mobility and carrier concentration of the co-doped diamond higher than those of the boron-doping diamond.

Magnetometry of micro-magnets with electrostatically defined Hall bars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lachance-Quirion, Dany; Camirand Lemyre, Julien; Bergeron, Laurent

2015-11-30

Micro-magnets are key components for quantum information processing with individual spins, enabling arbitrary rotations and addressability. In this work, characterization of sub-micrometer sized CoFe ferromagnets is performed with Hall bars electrostatically defined in a two-dimensional electron gas. Due to the ballistic nature of electron transport in the cross junction of the Hall bar, anomalies such as the quenched Hall effect appear near zero external magnetic field, thus hindering the sensitivity of the magnetometer to small magnetic fields. However, it is shown that the sensitivity of the diffusive limit can be almost completely restored at low temperatures using a large currentmore » density in the Hall bar of about 10 A/m. Overcoming the size limitation of conventional etched Hall bars with electrostatic gating enables the measurement of magnetization curves of 440 nm wide micro-magnets with a signal-to-noise ratio above 10{sup 3}. Furthermore, the inhomogeneity of the stray magnetic field created by the micro-magnets is directly measured using the gate-voltage-dependent width of the sensitive area of the Hall bar.« less

Ferromagnetic GaAs structures with single Mn delta-layer fabricated using laser deposition.

PubMed

Danilov, Yuri A; Vikhrova, Olga V; Kudrin, Alexey V; Zvonkov, Boris N

2012-06-01

The new technique combining metal-organic chemical vapor epitaxy with laser ablation of solid targets was used for fabrication of ferromagnetic GaAs structures with single Mn delta-doped layer. The structures demonstrated anomalous Hall effect, planar Hall effect, negative and anisotropic magnetoresistance in temperature range of 10-35 K. In GaAs structures with only single Mn delta-layer (without additional 2D hole gas channel or quantum well) ferromagnetism was observed for the first time.

Role of chiral quantum Hall edge states in nuclear spin polarization.

PubMed

Yang, Kaifeng; Nagase, Katsumi; Hirayama, Yoshiro; Mishima, Tetsuya D; Santos, Michael B; Liu, Hongwu

2017-04-20

Resistively detected NMR (RDNMR) based on dynamic nuclear polarization (DNP) in a quantum Hall ferromagnet (QHF) is a highly sensitive method for the discovery of fascinating quantum Hall phases; however, the mechanism of this DNP and, in particular, the role of quantum Hall edge states in it are unclear. Here we demonstrate the important but previously unrecognized effect of chiral edge modes on the nuclear spin polarization. A side-by-side comparison of the RDNMR signals from Hall bar and Corbino disk configurations allows us to distinguish the contributions of bulk and edge states to DNP in QHF. The unidirectional current flow along chiral edge states makes the polarization robust to thermal fluctuations at high temperatures and makes it possible to observe a reciprocity principle of the RDNMR response. These findings help us better understand complex NMR responses in QHF, which has important implications for the development of RDNMR techniques.

Large power factor and anomalous Hall effect and their correlation with observed linear magneto resistance in Co-doped Bi2Se3 3D topological insulator

NASA Astrophysics Data System (ADS)

Singh, Rahul; Shukla, K. K.; Kumar, A.; Okram, G. S.; Singh, D.; Ganeshan, V.; Lakhani, Archana; Ghosh, A. K.; Chatterjee, Sandip

2016-09-01

Magnetoresistance (MR), thermo power, magnetization and Hall effect measurements have been performed on Co-doped Bi2Se3 topological insulators. The undoped sample shows that the maximum MR as a destructive interference due to a π-Berry phase leads to a decrease of MR. As the Co is doped, the linearity in MR is increased. The observed MR of Bi2Se3 can be explained with the classical model. The low temperature MR behavior of Co doped samples cannot be explained with the same model, but can be explained with the quantum linear MR model. Magnetization behavior indicates the establishment of ferromagnetic ordering with Co doping. Hall effect data also supports the establishment of ferromagnetic ordering in Co-doped Bi2Se3 samples by showing the anomalous Hall effect. Furthermore, when spectral weight suppression is insignificant, Bi2Se3 behaves as a dilute magnetic semiconductor. Moreover, the maximum power factor is observed when time reversal symmetry (TRS) is maintained. As the TRS is broken the power factor value is decreased, which indicates that with the rise of Dirac cone above the Fermi level the anomalous Hall effect and linearity in MR increase and the power factor decreases.

Novel behaviors of anomalous Hall effect in TbFeCo ferrimagnetic thin films

NASA Astrophysics Data System (ADS)

Ando, Ryo; Komine, Takashi; Sato, Shiori; Kaneta, Shingo; Hara, Yoshiaki

2018-05-01

We investigate the temperature dependence and the thickness dependence of anomalous Hall effect (AHE) of TbFeCo ultra-thin films under high magnetic field. The sign change on temperature dependence of AHE in 20nm-thick TbFeCo film with rare-earth (RE) rich composition was observed. The AHE sign at low temperature is negative while it gradually becomes positive as the temperature increases. Moreover, the AHE sign for 5nm-thick TbFeCo film remains positive while that for 50nm-thick TbFeCo film remains negative at temperature in the range from 5 K to 400 K. The similar thickness dependence of AHE in TM-rich samples was also observed. From the mean-field approximation, the sign change temperature in AHE is related to the compensation temperature and the existence of interfacial region, which has the TM-rich composition and the weak anisotropy. Therefore, We clarified that the novel behavior of AHE sign changes in TbFeCo thin films with different thickness can be explained by the interfacial layer with weak anisotropy and two phase model.

Defect control of conventional and anomalous electron transport at complex oxide interfaces

DOE PAGES

Gunkel, F.; Bell, Chris; Inoue, Hisashi; ...

2016-08-30

Using low-temperature electrical measurements, the interrelation between electron transport, magnetic properties, and ionic defect structure in complex oxide interface systems is investigated, focusing on NdGaO 3/SrTiO 3 (100) interfaces. Field-dependent Hall characteristics (2–300 K) are obtained for samples grown at various growth pressures. In addition to multiple electron transport, interfacial magnetism is tracked exploiting the anomalous Hall effect (AHE). These two properties both contribute to a nonlinearity in the field dependence of the Hall resistance, with multiple carrier conduction evident below 30 K and AHE at temperatures ≲10 K. Considering these two sources of nonlinearity, we suggest a phenomenological modelmore » capturing the complex field dependence of the Hall characteristics in the low-temperature regime. Our model allows the extraction of the conventional transport parameters and a qualitative analysis of the magnetization. The electron mobility is found to decrease systematically with increasing growth pressure. This suggests dominant electron scattering by acceptor-type strontium vacancies incorporated during growth. The AHE scales with growth pressure. In conclusion, the most pronounced AHE is found at increased growth pressure and, thus, in the most defective, low-mobility samples, indicating a correlation between transport, magnetism, and cation defect concentration.« less

Annealing of Heavily Boron-Doped Silicon: Effect on Electrical and Thermoelectric Properties.

PubMed

Zulian, Laura; Segrado, Francesco; Narducci, Dario

2017-03-01

In previous studies it was shown that heavily boron-doped nanocrystalline silicon submitted to thermal treatments at temperatures ≥800 °C is characterized by an anomalously high thermoelectric power factor. Its enhanced performances were ascribed to the formation of SiBx precipitates at grain boundary, leading to the formation of potential barriers that filter out low-energy carriers, then causing a simultaneous enhancement of the Seebeck coefficient and of the electrical conductivity. To further investigate the effect of thermal treatment on boron-doped nanocrystalline silicon, samples were submitted to a host of annealing processes or of sequences of them at temperatures between 900 and 1000 °C and for various amounts of time. Electrical conductivity and Hall effect measurements were carried out after each thermal treatment over the temperature range 20–300 K. They provided evidence of the formation of an impurity band, and of hopping conduction at very low temperatures. Hall resistivity data versus temperature provided therefore important insights in the electronic structure of the system, which will enable a more complete understanding of the factors ruling energy filtering in this class of materials.

Magnetic phase dependence of the anomalous Hall effect in Mn 3Sn single crystals

DOE PAGES

Sung, Nakheon H.; Ronning, Filip; Thompson, Joe David; ...

2018-03-29

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn 3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T 1 = 275 K and T 2 = 200 K, below the antiferromagnetic phase transition at T N ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω -1 cm -1 to near zero below T 1, coincident with the vanishing of the weak ferromagnetic moment. Finally, this illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched onmore » and off by a subtle change in the symmetry of the magnetic structure near room temperature.« less

Magnetic phase dependence of the anomalous Hall effect in Mn 3Sn single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sung, Nakheon H.; Ronning, Filip; Thompson, Joe David

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn 3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T 1 = 275 K and T 2 = 200 K, below the antiferromagnetic phase transition at T N ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω -1 cm -1 to near zero below T 1, coincident with the vanishing of the weak ferromagnetic moment. Finally, this illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched onmore » and off by a subtle change in the symmetry of the magnetic structure near room temperature.« less

Magnetic phase dependence of the anomalous Hall effect in Mn3Sn single crystals

NASA Astrophysics Data System (ADS)

Sung, N. H.; Ronning, F.; Thompson, J. D.; Bauer, E. D.

2018-03-01

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T1 = 275 K and T2 = 200 K, below the antiferromagnetic phase transition at TN ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω-1 cm-1 to near zero below T1, coincident with the vanishing of the weak ferromagnetic moment. This illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched on and off by a subtle change in the symmetry of the magnetic structure near room temperature.

Iodine Hall Thruster Propellant Feed System for a CubeSat

NASA Technical Reports Server (NTRS)

Polzin, Kurt A.; Peeples, Steven

2014-01-01

The components required for an in-space iodine vapor-fed Hall effect thruster propellant management system are described. A laboratory apparatus was assembled and used to produce iodine vapor and control the flow through the application of heating to the propellant reservoir and through the adjustment of the opening in a proportional flow control valve. Changing of the reservoir temperature altered the flowrate on the timescale of minutes while adjustment of the proportional flow control valve changed the flowrate immediately without an overshoot or undershoot in flowrate with the requisite recovery time associated with thermal control systems. The flowrates tested spanned a range from 0-1.5 mg/s of iodine, which is sufficient to feed a 200-W Hall effect thruster.

Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid

NASA Astrophysics Data System (ADS)

Shang, T.; Zhan, Q. F.; Ma, L.; Yang, H. L.; Zuo, Z. H.; Xie, Y. L.; Li, H. H.; Liu, L. P.; Wang, B. M.; Wu, Y. H.; Zhang, S.; Li, Run-Wei

2015-12-01

We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y3Fe5O12 (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magne toresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed in the temperature range of 5-300 K. In contrast, a reduced SMR with negligible CAMR and AHR was found in Rh/YIG hybrid. Since CAMR and AHR are characteristics for all ferromagnetic metals, our results suggest that the Pt is likely magnetized by YIG due to the magnetic proximity effect (MPE) while Rh remains free of MPE. Thus the Rh/YIG hybrid could be an ideal model system to explore physics and devices associated with pure spin current.

Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects

NASA Astrophysics Data System (ADS)

Otrokov, M. M.; Menshchikova, T. V.; Vergniory, M. G.; Rusinov, I. P.; Vyazovskaya, A. Yu; Koroteev, Yu M.; Bihlmayer, G.; Ernst, A.; Echenique, P. M.; Arnau, A.; Chulkov, E. V.

2017-06-01

An interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption electronics as well as many fundamental phenomena like image magnetic monopoles, Majorana fermions and others. Unfortunately, being realized very recently, these effects are only accessible at extremely low temperatures and the lack of appropriate materials that would enable the temperature increase is a most severe challenge. Here, we propose a novel material platform with unique combination of properties making it perfectly suitable for the realization of both effects at elevated temperatures. The key element of the computational material design is an extension of a topological insulator (TI) surface by a thin film of ferromagnetic insulator, which is both structurally and compositionally compatible with the TI. Following this proposal we suggest a variety of specific systems and discuss their numerous advantages, in particular wide band gaps with the Fermi level located in the gap.

Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dauber, Jan; Stampfer, Christoph; Peter Grünberg Institute

2015-05-11

The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50more » nT/√(Hz) making our graphene sensors highly interesting for industrial applications.« less

Seasonal variation of the underground cosmic muon flux observed at Daya Bay

NASA Astrophysics Data System (ADS)

An, F. P.; Balantekin, A. B.; Band, H. R.; Bishai, M.; Blyth, S.; Cao, D.; Cao, G. F.; Cao, J.; Chan, Y. L.; Chang, J. F.; Chang, Y.; Chen, H. S.; Chen, Q. Y.; Chen, S. M.; Chen, Y. X.; Chen, Y.; Cheng, J.; Cheng, Z. K.; Cherwinka, J. J.; Chu, M. C.; Chukanov, A.; Cummings, J. P.; Ding, Y. Y.; Diwan, M. V.; Dolgareva, M.; Dove, J.; Dwyer, D. A.; Edwards, W. R.; Gill, R.; Gonchar, M.; Gong, G. H.; Gong, H.; Grassi, M.; Gu, W. Q.; Guo, L.; Guo, X. H.; Guo, Y. H.; Guo, Z.; Hackenburg, R. W.; Hans, S.; He, M.; Heeger, K. M.; Heng, Y. K.; Higuera, A.; Hsiung, Y. B.; Hu, B. Z.; Hu, T.; Huang, E. C.; Huang, H. X.; Huang, X. T.; Huber, P.; Huo, W.; Hussain, G.; Jaffe, D. E.; Jen, K. L.; Jetter, S.; Ji, X. P.; Ji, X. L.; Jiao, J. B.; Johnson, R. A.; Jones, D.; Kang, L.; Kettell, S. H.; Khan, A.; Kohn, S.; Kramer, M.; Kwan, K. K.; Kwok, M. W.; Kwok, T.; Langford, T. J.; Lau, K.; Lebanowski, L.; Lee, J.; Lee, J. H. C.; Lei, R. T.; Leitner, R.; Li, C.; Li, D. J.; Li, F.; Li, G. S.; Li, Q. J.; Li, S.; Li, S. C.; Li, W. D.; Li, X. N.; Li, X. Q.; Li, Y. F.; Li, Z. B.; Liang, H.; Lin, C. J.; Lin, G. L.; Lin, S.; Lin, S. K.; Lin, Y.-C.; Ling, J. J.; Link, J. M.; Littenberg, L.; Littlejohn, B. R.; Liu, J. L.; Liu, J. C.; Loh, C. W.; Lu, C.; Lu, H. Q.; Lu, J. S.; Luk, K. B.; Ma, X. Y.; Ma, X. B.; Ma, Y. Q.; Malyshkin, Y.; Martinez Caicedo, D. A.; McDonald, K. T.; McKeown, R. D.; Mitchell, I.; Nakajima, Y.; Napolitano, J.; Naumov, D.; Naumova, E.; Ngai, H. Y.; Ochoa-Ricoux, J. P.; Olshevskiy, A.; Pan, H.-R.; Park, J.; Patton, S.; Pec, V.; Peng, J. C.; Pinsky, L.; Pun, C. S. J.; Qi, F. Z.; Qi, M.; Qian, X.; Qiu, R. M.; Raper, N.; Ren, J.; Rosero, R.; Roskovec, B.; Ruan, X. C.; Sebastiani, C.; Steiner, H.; Sun, J. L.; Tang, W.; Taychenachev, D.; Treskov, K.; Tsang, K. V.; Tull, C. E.; Viaux, N.; Viren, B.; Vorobel, V.; Wang, C. H.; Wang, M.; Wang, N. Y.; Wang, R. G.; Wang, W.; Wang, X.; Wang, Y. F.; Wang, Z.; Wang, Z.; Wang, Z. M.; Wei, H. Y.; Wen, L. J.; Whisnant, K.; White, C. G.; Whitehead, L.; Wise, T.; Wong, H. L. H.; Wong, S. C. F.; Worcester, E.; Wu, C.-H.; Wu, Q.; Wu, W. J.; Xia, D. M.; Xia, J. K.; Xing, Z. Z.; Xu, J. L.; Xu, Y.; Xue, T.; Yang, C. G.; Yang, H.; Yang, L.; Yang, M. S.; Yang, M. T.; Yang, Y. Z.; Ye, M.; Ye, Z.; Yeh, M.; Young, B. L.; Yu, Z. Y.; Zeng, S.; Zhan, L.; Zhang, C.; Zhang, C. C.; Zhang, H. H.; Zhang, J. W.; Zhang, Q. M.; Zhang, X. T.; Zhang, Y. M.; Zhang, Y. X.; Zhang, Y. M.; Zhang, Z. J.; Zhang, Z. Y.; Zhang, Z. P.; Zhao, J.; Zhou, L.; Zhuang, H. L.; Zou, J. H.

2018-01-01

The Daya Bay Experiment consists of eight identically designed detectors located in three underground experimental halls named as EH1, EH2, EH3, with 250, 265 and 860 meters of water equivalent vertical overburden, respectively. Cosmic muon events have been recorded over a two-year period. The underground muon rate is observed to be positively correlated with the effective atmospheric temperature and to follow a seasonal modulation pattern. The correlation coefficient α, describing how a variation in the muon rate relates to a variation in the effective atmospheric temperature, is found to be αEH1 = 0.362±0.031, αEH2 = 0.433±0.038 and αEH3 = 0.641±0.057 for each experimental hall.

Magnetotransport of indium antimonide doped with manganese

NASA Astrophysics Data System (ADS)

Kuzmina, K.; Aronzon, B. A.; Kochura, A. V.; Lashkul, A. V.; Lisunov, K. G.; Lähderanta, E.; Shakhov, M. A.

2014-07-01

Magnetotransport, including the magnetoresistance (MR) and the Hall effect, isinvestigated in polycrystalline In1-xMnxSb samples with x = 0.02 - 0.06, containing nanosize MnSb precipitates. The relative MR, Δρ/ρ, is positive within the whole range of B= 0 - 10 T and T ~ 20 - 300 K. The Hall resistivity, ρH, exhibits a nonlinear dependence on B up to the room temperature.MR is interpreted with the two-band model, suggesting two types of holes with different concentration and mobility. In addition, analysis of ρH (B, T) is performed by taking into account both the normal and the anomalous contributions. The latter is attributable to the effect of MnSb nanoprecipitates, having the ferromagnetic Curie temperature well above 300 K.

Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

NASA Astrophysics Data System (ADS)

Guan, Bin; Siampour, Hamidreza; Fan, Zhao; Wang, Shun; Kong, Xiang Yang; Mesli, Abdelmadjid; Zhang, Jian; Dan, Yaping

2015-07-01

This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10-15 cm2 s-1, 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value.

Beyond the Fermi liquid paradigm: Hidden Fermi liquids

PubMed Central

Jain, J. K.; Anderson, P. W.

2009-01-01

An intense investigation of possible non-Fermi liquid states of matter has been inspired by two of the most intriguing phenomena discovered in the past quarter century, namely, high-temperature superconductivity and the fractional quantum Hall effect. Despite enormous conceptual strides, these two fields have developed largely along separate paths. Two widely employed theories are the resonating valence bond theory for high-temperature superconductivity and the composite fermion theory for the fractional quantum Hall effect. The goal of this perspective article is to note that they subscribe to a common underlying paradigm: They both connect these exotic quantum liquids to certain ordinary Fermi liquids residing in unphysical Hilbert spaces. Such a relation yields numerous nontrivial experimental consequences, exposing these theories to rigorous and definitive tests. PMID:19506260

Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

2010-02-01

Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

Large discrete jumps observed in the transition between Chern states in a ferromagnetic topological insulator

PubMed Central

Liu, Minhao; Wang, Wudi; Richardella, Anthony R.; Kandala, Abhinav; Li, Jian; Yazdani, Ali; Samarth, Nitin; Ong, N. Phuan

2016-01-01

A striking prediction in topological insulators is the appearance of the quantized Hall resistance when the surface states are magnetized. The surface Dirac states become gapped everywhere on the surface, but chiral edge states remain on the edges. In an applied current, the edge states produce a quantized Hall resistance that equals the Chern number C = ±1 (in natural units), even in zero magnetic field. This quantum anomalous Hall effect was observed by Chang et al. With reversal of the magnetic field, the system is trapped in a metastable state because of magnetic anisotropy. We investigate how the system escapes the metastable state at low temperatures (10 to 200 mK). When the dissipation (measured by the longitudinal resistance) is ultralow, we find that the system escapes by making a few very rapid transitions, as detected by large jumps in the Hall and longitudinal resistances. Using the field at which the initial jump occurs to estimate the escape rate, we find that raising the temperature strongly suppresses the rate. From a detailed map of the resistance versus gate voltage and temperature, we show that dissipation strongly affects the escape rate. We compare the observations with dissipative quantum tunneling predictions. In the ultralow dissipation regime, two temperature scales (T1 ~ 70 mK and T2 ~ 145 mK) exist, between which jumps can be observed. The jumps display a spatial correlation that extends over a large fraction of the sample. PMID:27482539

Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

NASA Astrophysics Data System (ADS)

Tsakonas, C.; Kuznetsov, V. L.; Cranton, W. M.; Kalfagiannis, N.; Abusabee, K. M.; Koutsogeorgis, D. C.; Abeywickrama, N.; Edwards, P. P.

2017-12-01

We report the low temperature (T  <  70 °C) fabrication of ZnO thin films (~140 nm) with Hall mobility of up to 17.3 cm2 V-1 s-1 making them suitable for thin film transistor (TFT) applications. The films were deposited by rf magnetron sputtering at T  <  70 °C and subsequently laser processed in ambient temperature in order to modify the Hall mobility and carrier concentration. Medium-to-low energy laser radiation densities and a high number of pulses were used to avoid damaging the films. Laser annealing of the films after aging in the lab under 25%-35% relative humidity and at an average illuminance of 120 lux resulted in an overall higher mobility and relatively low carrier concentration in comparison to the non-aged films that were laser processed immediately after deposition. A maximum overall measured Hall mobility of 17.3 cm2 V-1 s-1 at a carrier density of 2.3  ×  1018 cm-3 was measured from a 1 GΩ as deposited and aged film after the laser treatment. We suggest that the aging of non-processed films reduces structural defects mainly at grain boundaries by air species chemisorption, with concomitant increase in thermal conductivity so that laser processing can have an enhancing effect. Such a processing combination can act synergistically and produce suitable active layers for TFT applications with low temperature processing requirements.

Quasiparticle-mediated spin Hall effect in a superconductor.

PubMed

Wakamura, T; Akaike, H; Omori, Y; Niimi, Y; Takahashi, S; Fujimaki, A; Maekawa, S; Otani, Y

2015-07-01

In some materials the competition between superconductivity and magnetism brings about a variety of unique phenomena such as the coexistence of superconductivity and magnetism in heavy-fermion superconductors or spin-triplet supercurrent in ferromagnetic Josephson junctions. Recent observations of spin-charge separation in a lateral spin valve with a superconductor evidence that these remarkable properties are applicable to spintronics, although there are still few works exploring this possibility. Here, we report the experimental observation of the quasiparticle-mediated spin Hall effect in a superconductor, NbN. This compound exhibits the inverse spin Hall (ISH) effect even below the superconducting transition temperature. Surprisingly, the ISH signal increases by more than 2,000 times compared with that in the normal state with a decrease of the injected spin current. The effect disappears when the distance between the voltage probes becomes larger than the charge imbalance length, corroborating that the huge ISH signals measured are mediated by quasiparticles.

The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arapov, Yu. G.; Gudina, S. V.; Klepikova, A. S., E-mail: klepikova@imp.uran.ru

2017-02-15

The dependences of the longitudinal and Hall resistances on a magnetic field in n-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields Ð’ = 0–16 T and temperatures T = 0.05–4.2 K. Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated.

Controlling the anomalous Hall effect by electric-field-induced piezo-strain in Fe40Pt60/(001)-Pb(Mg1/3Nb2/3)0.67Ti0.33O3 multiferroic heterostructures

NASA Astrophysics Data System (ADS)

Yang, Yuanjun; Yao, Yingxue; Chen, Lei; Huang, Haoliang; Zhang, Benjian; Lin, Hui; Luo, Zhenlin; Gao, Chen; Lu, Y. L.; Li, Xiaoguang; Xiao, Gang; Feng, Ce; Zhao, Y. G.

2018-01-01

Electric-field control of the anomalous Hall effect (AHE) was investigated in Fe40Pt60/(001)-Pb(Mg1/3Nb2/3)0.67Ti0.33O3 (FePt/PMN-PT) multiferroic heterostructures at room temperature. It was observed that a very large Hall resistivity change of up to 23.9% was produced using electric fields under a magnetic field bias of 100 Oe. A pulsed electric field sequence was used to generate nonvolatile strain to manipulate the Hall resistivity. Two corresponding nonvolatile states with distinct Hall resistivities were achieved after the electric fields were removed, thus enabling the encoding of binary information for memory applications. These results demonstrate that the Hall resistivity can be reversibly switched in a nonvolatile manner using programmable electric fields. Two remanent magnetic states that were created by electric-field-induced piezo-strain from the PMN-PT were attributed to the nonvolatile and reversible properties of the AHE. This work suggests that a low-energy-consumption-based approach can be used to create nonvolatile resistance states for spintronic devices based on electric-field control of the AHE.

Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe1 -yCoyGe films

NASA Astrophysics Data System (ADS)

Spencer, Charles S.; Gayles, Jacob; Porter, Nicholas A.; Sugimoto, Satoshi; Aslam, Zabeada; Kinane, Christian J.; Charlton, Timothy R.; Freimuth, Frank; Chadov, Stanislav; Langridge, Sean; Sinova, Jairo; Felser, Claudia; Blügel, Stefan; Mokrousov, Yuriy; Marrows, Christopher H.

2018-06-01

Epitaxial films of the B20-structure compound Fe1 -yCoyGe were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulklike values of one Bohr magneton per Fe atom for FeGe to zero for nonmagnetic CoGe. The chiral lattice structure leads to a Dzyaloshinskii-Moriya interaction (DMI), and the films' helical magnetic ground state was confirmed using polarized neutron reflectometry measurements. The pitch of the spin helix, measured by this method, varies with Co content y and diverges at y ˜0.45 . This indicates a zero crossing of the DMI, which we reproduced in calculations using first-principles methods. We also measured the longitudinal and Hall resistivity of our films as a function of magnetic field, temperature, and Co content y . The Hall resistivity is expected to contain contributions from the ordinary, anomalous, and topological Hall effects. Both the anomalous and topological Hall resistivities show peaks around y ˜0.5 . Our first-principles calculations show a peak in the topological Hall constant at this value of y , related to the strong spin polarization predicted for intermediate values of y . Our calculations predict half-metallicity for y =0.6 , consistent with the experimentally observed linear magnetoresistance at this composition, and potentially related to the other unusual transport properties for intermediate value of y . While it is possible to reconcile theory with experiment for the various Hall effects for FeGe, the large topological Hall resistivities for y ˜0.5 are much larger than expected when the very small emergent fields associated with the divergence in the DMI are taken into account.

Effect of segmented electrode length on the performances of Hall thruster

NASA Astrophysics Data System (ADS)

Duan, Ping; Chen, Long; Liu, Guangrui; Bian, Xingyu; Yin, Yan

2016-09-01

The influences of the low-emissive graphite segmented electrode placed near the channel exit on the discharge characteristics of Hall thruster are studied using the particle-in-cell method. A two-dimensional physical model is established according to the Hall thruster discharge channel configuration. The effects of electrode length on potential, ion density, electron temperature, ionization rate and discharge current are investigated. It is found that, with the increasing of segmented electrode length, the equipotential lines bend towards the channel exit, and approximately parallel to the wall at the channel surface, radial velocity and radial flow of ions are increased, and the electron temperature is also enhanced. Due to the conductive characteristic of electrodes, the radial electric field and the axial electron conductivity near the wall are enhanced, and the probability of the electron-atom ionization is reduced, which leads to the degradation of ionization rate in discharge channel. However, the interaction between electrons and the wall enhances the near wall conductivity, therefore the discharge current grows along with the segmented electrode length, and the performance of the thruster is also affected.

Quantum Hall effect in epitaxial graphene with permanent magnets.

PubMed

Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

2016-12-06

We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

Magnetic mirror effect in a cylindrical Hall thruster

NASA Astrophysics Data System (ADS)

Jiang, Yiwei; Tang, Haibin; Ren, Junxue; Li, Min; Cao, Jinbin

2018-01-01

For cylindrical Hall thrusters, the magnetic field geometry is totally different from that in conventional Hall thrusters. In this study, we investigate the magnetic mirror effect in a fully cylindrical Hall thruster by changing the number of iron rings (0-5), which surround the discharge channel wall. The plasma properties inside the discharge channel and plume area are simulated with a self-developed PIC-MCC code. The numerical results show significant influence of magnetic geometry on the electron confinement. With the number of rings increasing above three, the near-wall electron density gap is reduced, indicating the suppression of neutral gas leakage. The electron temperature inside the discharge channel reaches its peak (38.4 eV) when the magnetic mirror is strongest. It is also found that the thruster performance has strong relations with the magnetic mirror as the propellant utilisation efficiency reaches the maximum (1.18) at the biggest magnetic mirror ratio. Also, the optimal magnetic mirror improves the multi-charged ion dynamics, including the ion production and propellant utilisation efficiency.

Crystal growth of magnetic dihydride GdxY1-xH2 for generation of spin current

NASA Astrophysics Data System (ADS)

Sakuraba, T.; Hirama, H.; Sakai, M.; Honda, Z.; Hayakawa, M.; Okoshi, T.; Kitajima, A.; Oshima, A.; Higuchi, K.; Hasegawa, S.

2013-09-01

Crystal growth of pure phases of GdxY1-xH2 (0≤x≤1) was successfully carried out by depositing GdxY1-x films and their hydrogenation, the growth results of which were investigated by X-ray diffraction measurements as well as temperature (T) dependence of magnetic susceptibility (χ). The fcc lattice constant in GdxY1-xH2 is found to be linearly increased with increasing x. Behavior characteristic to the para-to-antiferromagnetic transition are clearly observed in the χ-T curve for x=0.39, 0.47, 0.76, and 1.0 cases. The Néel temperature (TN) is found to be linearly decreased with decreasing x from x=1.0 (GdH2), and is predicted to show TN=0 K at x˜0.1 by extrapolating TN from large x region, implying the antiferromagnetic order disappears at x˜0.1. The quasi-zero Hall effect was observed for x=0, 0.19, 0.37, 0.39, and 0.47 cases, whereas a moderate Hall effect is observed for x=0.76 and 1.0 cases. The type of Hall effect is also discussed.

Hall effects on unsteady MHD oscillatory free convective flow of second grade fluid through porous medium between two vertical plates

NASA Astrophysics Data System (ADS)

VeeraKrishna, M.; Subba Reddy, G.; Chamkha, A. J.

2018-02-01

The effects of radiation and Hall current on an unsteady magnetohydrodynamic free convective flow in a vertical channel filled with a porous medium have been studied. We consider an incompressible viscous and electrically conducting incompressible viscous second grade fluid bounded by a loosely packed porous medium. The fluid is driven by an oscillating pressure gradient parallel to the channel plates, and the entire flow field is subjected to a uniform inclined magnetic field of strength Ho inclined at an angle of inclination α with the normal to the boundaries in the transverse xy-plane. The temperature of one of the plates varies periodically, and the temperature difference of the plates is high enough to induce the radiative heat transfer. The effects of various parameters on the velocity profiles, the skin friction, temperature field, rate of heat transfer in terms of their amplitude, and phase angles are shown graphically.

Determination of intrinsic spin Hall angle in Pt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yi; Deorani, Praveen; Qiu, Xuepeng

2014-10-13

The spin Hall angle in Pt is evaluated in Pt/NiFe bilayers by spin torque ferromagnetic resonance measurements and is found to increase with increasing the NiFe thickness. To extract the intrinsic spin Hall angle in Pt by estimating the total spin current injected into NiFe from Pt, the NiFe thickness dependent measurements are performed and the spin diffusion in the NiFe layer is taken into account. The intrinsic spin Hall angle of Pt is determined to be 0.068 at room temperature and is found to be almost constant in the temperature range of 13–300 K.

Strong Enhancement of the Spin Hall Effect by Spin Fluctuations near the Curie Point of FexPt1 -x Alloys

NASA Astrophysics Data System (ADS)

Ou, Yongxi; Ralph, D. C.; Buhrman, R. A.

2018-03-01

Robust spin Hall effects (SHE) have recently been observed in nonmagnetic heavy metal systems with strong spin-orbit interactions. These SHE are either attributed to an intrinsic band-structure effect or to extrinsic spin-dependent scattering from impurities, namely, side jump or skew scattering. Here we report on an extraordinarily strong spin Hall effect, attributable to spin fluctuations, in ferromagnetic FexPt1 -x alloys near their Curie point, tunable with x . This results in a dampinglike spin-orbit torque being exerted on an adjacent ferromagnetic layer that is strongly temperature dependent in this transition region, with a peak value that indicates a lower bound 0.34 ±0.02 for the peak spin Hall ratio within the FePt. We also observe a pronounced peak in the effective spin-mixing conductance of the FM /FePt interface, and determine the spin diffusion length in these FexPt1 -x alloys. These results establish new opportunities for fundamental studies of spin dynamics and transport in ferromagnetic systems with strong spin fluctuations, and a new pathway for efficiently generating strong spin currents for applications.

Thermally developed peristaltic propulsion of magnetic solid particles in biorheological fluids

NASA Astrophysics Data System (ADS)

Bhatti, M. M.; Zeeshan, A.; Tripathi, D.; Ellahi, R.

2018-04-01

In this article, effects of heat and mass transfer on MHD peristaltic motion of solid particles in a dusty fluid are investigated. The effects of nonlinear thermal radiation and Hall current are also taken into account. The relevant flow analysis is modelled for fluid phase and dust phase in wave frame by means of Casson fluid model. Computation of solutions is presented for velocity profile, temperature profile and concentration profile. The effects of all the physical parameters such as particle volume fraction, Hartmann number, Hall Effect, Prandtl number, Eckert number, Schmidt number and Soret number are discussed mathematically and graphically. It is noted that the influence of magnetic field and particle volume fraction opposes the flow. Also, the impact of particle volume fraction is quite opposite on temperature and concentration profile. This model is applicable in smart drug delivery systems and bacteria movement in urine flow through the ureter.

Performance and Facility Background Pressure Characterization Tests of NASAs 12.5-kW Hall Effect Rocket with Magnetic Shielding Thruster

NASA Technical Reports Server (NTRS)

Kamhawi, Hani; Huang, Wensheng; Haag, Thomas; Shastry, Rohit; Thomas, Robert; Yim, John; Herman, Daniel; Williams, George; Myers, James; Hofer, Richard;

Anomalous Hall hysteresis in T m3F e5O12/Pt with strain-induced perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Tang, Chi; Sellappan, Pathikumar; Liu, Yawen; Xu, Yadong; Garay, Javier E.; Shi, Jing

2016-10-01

We demonstrate robust interface strain-induced perpendicular magnetic anisotropy in atomically flat ferrimagnetic insulator T m3F e5O12 (TIG) films grown with pulsed laser deposition on a substituted G d3G a5O12 substrate which maximizes the tensile strain at the interface. In bilayers consisting of Pt and TIG, we observe large squared Hall hysteresis loops over a wide range of thicknesses of Pt at room temperature. When a thin Cu layer is inserted between Pt and TIG, the Hall hysteresis magnitude decays but stays finite as the thickness of Cu increases up to 5 nm. However, if the Cu layer is placed atop Pt instead, the Hall hysteresis magnitude is consistently larger than when the Cu layer with the same thickness is inserted in between for all Cu thicknesses. These results suggest that both the proximity-induced ferromagnetism and spin current contribute to the anomalous Hall effect.

A Designed Room Temperature Multilayered Magnetic Semiconductor

NASA Astrophysics Data System (ADS)

Bouma, Dinah Simone; Charilaou, Michalis; Bordel, Catherine; Duchin, Ryan; Barriga, Alexander; Farmer, Adam; Hellman, Frances; Materials Science Division, Lawrence Berkeley National Lab Team

2015-03-01

A room temperature magnetic semiconductor has been designed and fabricated by using an epitaxial antiferromagnet (NiO) grown in the (111) orientation, which gives surface uncompensated magnetism for an odd number of planes, layered with the lightly doped semiconductor Al-doped ZnO (AZO). Magnetization and Hall effect measurements of multilayers of NiO and AZO are presented for varying thickness of each. The magnetic properties vary as a function of the number of Ni planes in each NiO layer; an odd number of Ni planes yields on each NiO layer an uncompensated moment which is RKKY-coupled to the moments on adjacent NiO layers via the carriers in the AZO. This RKKY coupling oscillates with the AZO layer thickness, and it disappears entirely in samples where the AZO is replaced with undoped ZnO. The anomalous Hall effect data indicate that the carriers in the AZO are spin-polarized according to the direction of the applied field at both low temperature and room temperature. NiO/AZO multilayers are therefore a promising candidate for spintronic applications demanding a room-temperature semiconductor.

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures.

PubMed

Xiao, Di; Zhu, Wenguang; Ran, Ying; Nagaosa, Naoto; Okamoto, Satoshi

2011-12-20

Topological insulators are characterized by a non-trivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we predict, based on tight-binding modelling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional topological insulators. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates and external gate voltages. We predict that LaAuO(3) bilayers have a topologically non-trivial energy gap of about 0.15 eV, which is sufficiently large to realize the quantum spin Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly flat topologically non-trivial bands found in e(g) systems are also discussed.

Novel High Speed Devices and Heterostructures Prepared by Molecular Beam Epitaxy

DTIC Science & Technology

1989-02-13

GaSb/GaAs system was reported from the results of photoreflectance measurements : w ereport a heavy-hole band offset s5; 1.7 for GaAs.g9bd.,, establishing...studied by variable temperature Hall measurements . For the GaA# 1_hb# material grown on InP, a two-acceptor model was forwarded to describe the Hall...Meanwhile, from Hall measurements , room temperature electron mobilities as high as 57000 m./Vs were reported in a 4.6 & thick unintentionally-doped InSb

Warning system against locomotive driving wheel flaccidity

NASA Astrophysics Data System (ADS)

Luo, Peng

2014-09-01

Causes of locomotive relaxation are discussed. Alarm system against locomotive driving wheel flaccidity is designed by means of techniques of infrared temperature measurement and Hall sensor measurement. The design scheme of the system, the principle of detecting locomotive driving wheel flaccidity with temperature and Hall sensor is introduced, threshold temperature of infrared alarm is determined. The circuit system is designed by microcontroller technology and the software is designed with the assembly language. The experiment of measuring the flaccid displacement with Hall sensor measurement is simulated. The results show that the system runs well with high reliability and low cost, which has a wide prospect of application and popularization.

Non-Intrusive, Time-Resolved Hall Thruster Near-Field Electron Temperature Measurements

DTIC Science & Technology

2011-08-01

With the growing interest in Hall thruster technology, comes the need to fully characterize the plasma dynamics that determine performance. Of...instabilities characteristic of Hall thruster behavior, time resolved techniques must be developed. This study presents a non-intrusive method of

Graphene/Si CMOS Hybrid Hall Integrated Circuits

PubMed Central

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-01-01

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process. PMID:24998222

Graphene/Si CMOS hybrid hall integrated circuits.

PubMed

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-07-07

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

Interfacial scattering effect on anisotropic magnetoresistance and anomalous Hall effect in Ta/Fe multilayers

NASA Astrophysics Data System (ADS)

Zhang, Qiang; Zhang, Junwei; Zhao, Yuelei; Wen, Yan; Li, Peng; Zhang, Senfu; He, Xin; Zhang, Junli; Zhang, Xixiang

2018-05-01

The effect of interfacial scattering on anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE) was studied in the (Ta12/n/Fe36/n) n multilayers, where the numbers give the thickness in nanometer and n is an integer from 1 to 12. The multilayer structure has been confirmed by the XRR spectra and STEM images of cross-sections. The magneto-transport properties were measured by four-point probe method in Hall bar shaped samples in the temperature range of 5 - 300 K. The AMR increases with n, which could be ascribed to the interfacial spin-orbit scattering. At 5 K, the longitudinal resistivity (ρxx) increases by 6.4 times and the anomalous Hall resistivity (ρAHE) increases by 49.4 times from n =1 to n =12, indicative of the interfacial scattering effect. The skew-scattering, side-jump and intrinsic contributions to the AHE were separated successfully. As n increases from 1 to 12, the intrinsic contribution decreases because of the decaying crystallinity or finite size effect and the intrinsic contribution dominated the AHE for all samples. The side jump changes from negative to positive because the interfacial scattering and intralayer scattering in Fe layers both contribute to side jump in the AHE but with opposite sign.

Magnetotransport properties of 8-Pmmn borophene: effects of Hall field and strain.

PubMed

Islam, S K Firoz

2018-07-11

The polymorph of 8-Pmmn borophene is an anisotropic Dirac material with tilted Dirac cones at two valleys. The tilting of the Dirac cones at two valleys are in opposite directions, which manifests itself via the valley dependent Landau levels in presence of an in-plane electric field (Hall field). The valley dependent Landau levels cause valley polarized magnetotransport properties in presence of the Hall field, which is in contrast to the monolayer graphene with isotropic non-tilted Dirac cones. The longitudinal conductivity and Hall conductivity are evaluated by using linear response theory in low temperature regime. An analytical approximate form of the longitudinal conductivity is also obtained. It is observed that the tilting of the Dirac cones amplifies the frequency of the longitudinal conductivity oscillation (Shubnikov-de Haas). On the other hand, the Hall conductivity exhibits graphene-like plateaus except the appearance of valley dependent steps which are purely attributed to the Hall field induced lifting of the valley degeneracy in the Landau levels. Finally we look into the different cases when the Hall field is applied to the strained borophene and find that valley dependency is fully dominated by strain rather than Hall field. Another noticeable point is that if the real magnetic field is replaced by the strain induced pseudo magnetic field then the electric field looses its ability to cause valley polarized transport.

Fabry-Perot Interferometry in the Integer and Fractional Quantum Hall Regimes

NASA Astrophysics Data System (ADS)

McClure, Douglas; Chang, Willy; Kou, Angela; Marcus, Charles; Pfeiffer, Loren; West, Ken

2011-03-01

We present measurements of electronic Fabry-Perot interferometers in the integer and fractional quantum Hall regimes. Two classes of resistance oscillations may be seen as a function of magnetic field and gate voltage, as we have previously reported. In small interferometers in the integer regime, oscillations of the type associated with Coulomb interaction are ubiquitous, while those consistent with single-particle Aharonov-Bohm interference are seen to co-exist in some configurations. The amplitude scaling of both types with temperature and device size is consistent with a theoretical model. Oscillations are further observed in the fractional quantum Hall regime. Here the dependence of the period on the filling factors in the constrictions and bulk of the interferometer can shed light on the effective charge of the interfering quasiparticles, but care is needed to distinguish these oscillations from those associated with integer quantum Hall states. We acknowledge funding from Microsoft Project Q and IBM.

Impact of the Hall effect on high-energy-density plasma jets.

PubMed

Gourdain, P-A; Seyler, C E

2013-01-04

Using a 1-MA, 100 ns-rise-time pulsed power generator, radial foil configurations can produce strongly collimated plasma jets. The resulting jets have electron densities on the order of 10(20) cm(-3), temperatures above 50 eV and plasma velocities on the order of 100 km/s, giving Reynolds numbers of the order of 10(3), magnetic Reynolds and Péclet numbers on the order of 1. While Hall physics does not dominate jet dynamics due to the large particle density and flow inside, it strongly impacts flows in the jet periphery where plasma density is low. As a result, Hall physics affects indirectly the geometrical shape of the jet and its density profile. The comparison between experiments and numerical simulations demonstrates that the Hall term enhances the jet density when the plasma current flows away from the jet compared to the case where the plasma current flows towards it.

Polynomial-interpolation algorithm for van der Pauw Hall measurement in a metal hydride film

NASA Astrophysics Data System (ADS)

Koon, D. W.; Ares, J. R.; Leardini, F.; Fernández, J. F.; Ferrer, I. J.

2008-10-01

We apply a four-term polynomial-interpolation extension of the van der Pauw Hall measurement technique to a 330 nm Mg-Pd bilayer during both absorption and desorption of hydrogen at room temperature. We show that standard versions of the van der Pauw DC Hall measurement technique produce an error of over 100% due to a drifting offset signal and can lead to unphysical interpretations of the physical processes occurring in this film. The four-term technique effectively removes this source of error, even when the offset signal is drifting by an amount larger than the Hall signal in the time interval between successive measurements. This technique can be used to increase the resolution of transport studies of any material in which the resistivity is rapidly changing, particularly when the material is changing from metallic to insulating behavior.

Nontrivial interplay of strong disorder and interactions in quantum spin-Hall insulators doped with dilute magnetic impurities

NASA Astrophysics Data System (ADS)

Zheng, Jun-Hui; Cazalilla, Miguel A.

2018-06-01

We investigate nonperturbatively the effect of a magnetic dopant impurity on the edge transport of a quantum spin Hall (QSH) insulator. We show that for a strongly coupled magnetic dopant located near the edge of a system, a pair of transmission antiresonances appear. When the chemical potential is on resonance, interaction effects broaden the antiresonance width with decreasing temperature, thus suppressing transport for both repulsive and moderately attractive interactions. Consequences for the recently observed QSH insulating phase of the 1 -T' of WTe2 are briefly discussed.

Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jongkyong; Gang, Suhyun; Jo, Yongcheol

We have investigated the temperature dependence of ballistic mobility in a 100 nm-long InGaAs/InAlAs metamorphic high-electron-mobility transistor designed for millimeter-wavelength RF applications. To extract the temperature dependence of quasi-ballistic mobility, our experiment involves measurements of the effective mobility in the low-bias linear region of the transistor and of the collision-dominated Hall mobility using a gated Hall bar of the same epitaxial structure. The data measured from the experiment are consistent with that of modeled ballistic mobility based on ballistic transport theory. These results advance the understanding of ballistic transport in various transistors with a nano-scale channel length that is comparable tomore » the carrier's mean free path in the channel.« less

Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperatures

NASA Astrophysics Data System (ADS)

Thiery, N.; Naletov, V. V.; Vila, L.; Marty, A.; Brenac, A.; Jacquot, J.-F.; de Loubens, G.; Viret, M.; Anane, A.; Cros, V.; Ben Youssef, J.; Beaulieu, N.; Demidov, V. E.; Divinskiy, B.; Demokritov, S. O.; Klein, O.

2018-02-01

We report a study on the electrical properties of 19-nm-thick yttrium iron garnet (YIG) films grown by liquid phase epitaxy on gadolinium gallium garnet single crystal. The electrical conductivity and Hall coefficient are measured in the high-temperature range [300,400] K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band gap of Eg≈2 eV. It drops to values about 5 ×103Ω cm at T =400 K, thus indicating that epitaxial YIG ultrathin films behave as large gap semiconductors. We also infer the Hall mobility, which is found to be positive (p type) at 5 cm2V-1sec-1 and almost independent of temperature. We discuss the consequence for nonlocal spin transport experiments performed on YIG at room temperature and demonstrate the existence of electrical offset voltages to be disentangled from pure spin effects.

Hyperscaling violating black hole solutions and magneto-thermoelectric DC conductivities in holography

NASA Astrophysics Data System (ADS)

Ge, Xian-Hui; Tian, Yu; Wu, Shang-Yu; Wu, Shao-Feng

2017-08-01

We derive new black hole solutions in Einstein-Maxwell-axion-dilaton theory with a hyperscaling violation exponent. We then examine the corresponding anomalous transport exhibited by cuprate strange metals in the normal phase of high-temperature superconductors via gauge-gravity duality. Linear-temperature-dependence resistivity and quadratic-temperature-dependence inverse Hall angle can be achieved. In the high-temperature regime, the heat conductivity and Hall Lorenz ratio are proportional to the temperature. The Nernst signal first increases as temperature goes up, but it then decreases with increasing temperature in the high-temperature regime.

Divacancy-hydrogen complexes in dislocation-free high-purity germanium. [Annealing, Hall effect, steady-state concentration energy dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haller, E.E.; Hubbard, G.S.; Hansen, W.L.

1976-09-01

A defect center with a single acceptor level at E/sub v/ + 0.08 eV appears in H/sub 2/-grown dislocation-free high-purity germanium. Its concentration changes reversibly upon annealing up to 650 K. By means of Hall-effect and conductivity measurements over a large temperature range the temperature dependence of the steady-state concentration between 450 and 720 K as well as the transients following changes in temperature were determined. The observed acceptor level is attributed to the divacancy-hydrogen complex V/sub 2/H. The complex reacts with hydrogen, dissolved in the Ge lattice or stored in traps, according to V/sub 2/H + H reversible V/submore » 2/H/sub 2/. An energy level associated with the divacancy-dihydrogen complex was not observed. These results are in good agreement with the idea that hydrogen in germanium forms a ''very deep donor'' (i.e., the energy level lies inside the valence band).« less

Frictional Magneto-Coulomb Drag in Graphene Double-Layer Heterostructures.

PubMed

Liu, Xiaomeng; Wang, Lei; Fong, Kin Chung; Gao, Yuanda; Maher, Patrick; Watanabe, Kenji; Taniguchi, Takashi; Hone, James; Dean, Cory; Kim, Philip

2017-08-04

Coulomb interaction between two closely spaced parallel layers of conductors can generate the frictional drag effect by interlayer Coulomb scattering. Employing graphene double layers separated by few-layer hexagonal boron nitride, we investigate density tunable magneto- and Hall drag under strong magnetic fields. The observed large magnetodrag and Hall-drag signals can be related with Laudau level filling status of the drive and drag layers. We find that the sign and magnitude of the drag resistivity tensor can be quantitatively correlated to the variation of magnetoresistivity tensors in the drive and drag layers, confirming a theoretical formula for magnetodrag in the quantum Hall regime. The observed weak temperature dependence and ∼B^{2} dependence of the magnetodrag are qualitatively explained by Coulomb scattering phase-space argument.

Anomalous Hall effect in semiconductor quantum wells in proximity to chiral p -wave superconductors

NASA Astrophysics Data System (ADS)

Yang, F.; Yu, T.; Wu, M. W.

2018-05-01

By using the gauge-invariant optical Bloch equation, we perform a microscopic kinetic investigation on the anomalous Hall effect in chiral p -wave superconducting states. Specifically, the intrinsic anomalous Hall conductivity in the absence of the magnetic field is zero as a consequence of Galilean invariance in our description. As for the extrinsic channel, a finite anomalous Hall current is obtained from the impurity scattering with the optically excited normal quasiparticle current even at zero temperature. From our kinetic description, it can be clearly seen that the excited normal quasiparticle current is due to an induced center-of-mass momentum of Cooper pairs through the acceleration driven by ac electric field. For the induced anomalous Hall current, we show that the conventional skew-scattering channel in the linear response makes the dominant contribution in the strong impurity interaction. In this case, our kinetic description as a supplementary viewpoint mostly confirms the results of Kubo formalism in the literature. Nevertheless, in the weak impurity interaction, this skew-scattering channel becomes marginal and we reveal that an induction channel from the Born contribution dominates the anomalous Hall current. This channel, which has long been overlooked in the literature, is due to the particle-hole asymmetry by nonlinear optical excitation. Finally, we study the case in the chiral p -wave superconducting state with a transverse conical magnetization, which breaks the Galilean invariance. In this situation, the intrinsic anomalous Hall conductivity is no longer zero. Comparison of this intrinsic channel with the extrinsic one from impurity scattering is addressed.

Mini array of quantum Hall devices based on epitaxial graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novikov, S.; Lebedeva, N.; Hämäläinen, J.

2016-05-07

Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux R{sub H,2} at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed thatmore » the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×R{sub H,2} = 2 h/e{sup 2} was smaller than the relative standard uncertainty of the measurement (<1 × 10{sup −7}) limited by the used resistance bridge.« less

Tunable magnetic and transport properties of Mn3Ga thin films on Ta/Ru seed layer

NASA Astrophysics Data System (ADS)

Hu, Fang; Xu, Guizhou; You, Yurong; Zhang, Zhi; Xu, Zhan; Gong, Yuanyuan; Liu, Er; Zhang, Hongguo; Liu, Enke; Wang, Wenhong; Xu, Feng

2018-03-01

Hexagonal D019-type Mn3Z alloys that possess large anomalous and topological-like Hall effects have attracted much attention due to their great potential in antiferromagnetic spintronic devices. Herein, we report the preparation of Mn3Ga films in both tetragonal and hexagonal phases with a tuned Ta/Ru seed layer on a thermally oxidized Si substrate. Large coercivity together with large anomalous Hall resistivity is found in the Ta-only sample with a mixed tetragonal phase. By increasing the thickness of the Ru layer, the tetragonal phase gradually disappears and a relatively pure hexagonal phase is obtained in the Ta(5)/Ru(30) buffered sample. Further magnetic and transport measurements revealed that the anomalous Hall conductivity nearly vanishes in the pure hexagonal sample, while an abnormal asymmetric hump structure emerges in the low field region. The extracted additional Hall term is robust in a large temperature range and presents a sign reversal above 200 K. The abnormal Hall properties are proposed to be closely related to the frustrated spin structure of D019 Mn3Ga.

Anomalous Transport Properties via the Competition between the RKKY Interaction and the Kondo Effect in CexLa1-xRu2Si2

NASA Astrophysics Data System (ADS)

Shimizu, Yasunobu; Matsumoto, Yuji; Aoki, Kosuke; Kimura, Noriaki; Aoki, Haruyoshi

2012-04-01

We have performed an extensive study on the electronic transport properties of CexLa1-xRu2Si2. At zero field or under the fields parallel to the hard axis of magnetization, the residual resistivity, magnetoresistivity and Hall resistivity are found to be most enhanced around x = 0.85 in the antiferromagnetic state. On the other hand, the high magnetic field along the easy axis is effective to suppress the enhancement. The coherence temperature derived from the temperature variation of Hall coefficient becomes equal to the antiferromagnetic transition temperature at x = 0.85, indicating that the competition between the coherence of the Kondo singlet and the long range magnetic order is responsible for the enhancement. The competition is likely to affect also the magnetic properties in the antiferromagnetic state. The comparison with the de Haas--van Alphen effect measurements suggests that the enhancement is likely to be due to the increase in scattering. The present results are compared with the theory by Hattori and Miyake.

Disorder-induced half-integer quantized conductance plateau in quantum anomalous Hall insulator-superconductor structures

NASA Astrophysics Data System (ADS)

Huang, Yingyi; Setiawan, F.; Sau, Jay D.

2018-03-01

A weak superconducting proximity effect in the vicinity of the topological transition of a quantum anomalous Hall system has been proposed as a venue to realize a topological superconductor (TSC) with chiral Majorana edge modes (CMEMs). A recent experiment [Science 357, 294 (2017), 10.1126/science.aag2792] claimed to have observed such CMEMs in the form of a half-integer quantized conductance plateau in the two-terminal transport measurement of a quantum anomalous Hall-superconductor junction. Although the presence of a superconducting proximity effect generically splits the quantum Hall transition into two phase transitions with a gapped TSC in between, in this Rapid Communication we propose that a nearly flat conductance plateau, similar to that expected from CMEMs, can also arise from the percolation of quantum Hall edges well before the onset of the TSC or at temperatures much above the TSC gap. Our Rapid Communication, therefore, suggests that, in order to confirm the TSC, it is necessary to supplement the observation of the half-quantized conductance plateau with a hard superconducting gap (which is unlikely for a disordered system) from the conductance measurements or the heat transport measurement of the transport gap. Alternatively, the half-quantized thermal conductance would also serve as a smoking-gun signature of the TSC.

Hall mobility and photoconductivity in TlGaSeS crystals

NASA Astrophysics Data System (ADS)

Qasrawi, A. F.; Gasanly, N. M.

2013-01-01

In this work, the fundamental properties of the TlGaSeS single crystals are investigated by means of temperature dependent electrical resistivity and Hall mobility. The crystal photo-responsibility as function of illumination intensity and temperature is also tested in the temperature range of 350-160 K. The study allowed the determination of acceptor centers as 230 and 450 meV below and above 260 K, and recombination centers as 181, 363, and 10 meV at low, moderate, and high temperatures, respectively. While the temperature-dependent Hall mobility behaved abnormally, the photoconductivity analysis reflected an illumination intensity dependent recombination center. Namely, the recombination center increased from 10 to 90 meV as the light intensity increased from 27.9 to 76.7 mW cm-2, respectively. That strange behavior was attributed to the temporary shift in Fermi level caused by photoexcitation.

An Inversion Method for Reconstructing Hall Thruster Plume Parameters from the Line Integrated Measurements (Preprint)

DTIC Science & Technology

2007-06-05

From - To) 05-06-2007 Technical Paper 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER An Inversion Method for Reconstructing Hall Thruster Plume...239.18 An Inversion Method for Reconstructing Hall Thruster Plume Parameters from Line Integrated Measurements (Preprint) Taylor S. Matlock∗ Jackson...dimensional estimate of the plume electron temperature using a published xenon collisional radiative model. I. Introduction The Hall thruster is a high

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jedrecy, N., E-mail: jedrecy@insp.jussieu.fr; Hamieh, M.; Hebert, C.

We show that the well-established universal scaling σ{sub xy}{sup AHE} ∼ σ{sub xx}{sup 1.6} between anomalous Hall and longitudinal conductivities in the low conductivity regime (σ{sub xx} < 10{sup 4} Ω{sup −1} cm{sup −1}) transforms into the scaling σ{sub xy}{sup AHE} ∼ σ{sub xx}{sup 2} at the onset of strong electron localization. The crossover between the two relations is observed in magnetite-derived Zn{sub x}Fe{sub 3-x}O{sub 4} thin films where an insulating/hopping regime follows a bad metal/hopping regime below the Verwey transition temperature T{sub v}. Our results demonstrate that electron localization effects come into play in the anomalous Hall effect (AHE)more » modifying significantly the scaling exponent. In addition, the thermal evolution of the anomalous Hall resistivity suggests the existence of spin polarons whose size would decrease below T{sub v}.« less

Linear response and Berry curvature in two-dimensional topological phases

NASA Astrophysics Data System (ADS)

Bradlyn, Barry J.

In this thesis we examine the viscous and thermal transport properties of chiral topological phases, and their relationship to topological invariants. We start by developing a Kubo formalism for calculating the frequency dependent viscosity tensor of a general quantum system, both with and without a uniform external magnetic field. The importance of contact terms is emphasized. We apply this formalism to the study of integer and fractional quantum Hall states, as well as p + ip paired superfluids, and verify the relationship between the Hall viscosity and the mean orbital spin density. We also elucidate the connection between our Kubo formulas and prior adiabatic transport calculations of the Hall viscosity. Additionally, we derive a general relationship between the frequency dependent viscosity and conductivity tensors for Galilean-invariant systems. We comment on the implications of this relationship towards the measurement of Hall viscosity in solid-state systems. To address the question of thermal transport, we first review the standard Kubo formalism of Luttinger for computing thermoelectric coefficients. We apply this to the specific case of non-interacting electrons in the integer quantum Hall regime, paying careful attention to the roles of bulk and edge effects. In order to generalize our discussion to interacting systems, we construct a low-energy effective action for a two-dimensional non-relativistic topological phase of matter in a continuum, which completely describes all of its bulk thermoelectric and visco-elastic properties in the limit of low frequencies, long distances, and zero temperature, without assuming either Lorentz or Galilean invariance, by coupling the microscopic degrees of freedom to the background spacetime geometry. We derive the most general form of a local bulk induced action to first order in derivatives of the background fields, from which thermodynamic and transport properties can be obtained. We show that the gapped bulk cannot contribute to low-temperature thermoelectric transport other than the ordinary Hall conductivity; the other thermoelectric effects (if they occur) are thus purely edge effects. The stress response to time-dependent strains is given by the Hall viscosity, which is robust against perturbations and related to the spin current. Finally, we address the issue of calculating the topological central charge from bulk wavefunctions for a topological phase. Using the form of the topological terms in the induced action, we show that we can calculate the various coefficients of these terms as Berry curvatures associated to certain metric and electromagnetic vector potential perturbations. We carry out this computation explicitly for quantum Hall trial wavefunctions that can be represented as conformal blocks in a chiral conformal field theory (CFT). These calculations make use of the gauge and gravitational anomalies in the underlying chiral CFT.

Reversible electrical-field control of magnetization and anomalous Hall effect in Co/PMN-PT hybrid heterostructures

NASA Astrophysics Data System (ADS)

Wang, J.; Huang, Q. K.; Lu, S. Y.; Tian, Y. F.; Chen, Y. X.; Bai, L. H.; Dai, Y.; Yan, S. S.

2018-04-01

Room-temperature reversible electrical-field control of the magnetization and the anomalous Hall effect was reported in hybrid multiferroic heterojunctions based on Co/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT). We demonstrate herein that electrical-field-induced strain and oxygen-ion migration in ZnO/Co/PMN-PT junctions exert opposing effects on the magnetic properties of the Co sublayer, and the competition between these effects determines the final magnitude of magnetization. This proof-of-concept investigation opens an alternative way to optimize and enhance the electrical-field effect on magnetism through the combination of multiple electrical manipulation mechanisms in hybrid multiferroic devices.

Evidence for the absence of electron-electron Coulomb interaction quantum correction to the anomalous Hall effect in Co2FeSi Heusler-alloy thin films

NASA Astrophysics Data System (ADS)

Hazra, Binoy Krishna; Kaul, S. N.; Srinath, S.; Raja, M. Manivel; Rawat, R.; Lakhani, Archana

2017-11-01

Electrical (longitudinal) resistivity ρx x, at H =0 and H =80 kOe, anomalous Hall resistivity ρxy A H, and magnetization M , have been measured at different temperatures in the range 5-300 K on the Co2FeSi (CFS) Heusler-alloy thin films, grown on Si(111) substrate, with thickness ranging from 12 to 100 nm. At fixed fields H =0 and H =80 kOe, ρx x(T ) goes through a minimum at T =Tmin (which depends on the film thickness) in all the CFS thin films. In sharp contrast, both the anomalous Hall coefficient RA and ρxy A H monotonously increase with temperature without exhibiting a minimum. Elaborate analyses of ρx x, RA, and ρxy A H establishes the following. (i) The enhanced electron-electron Coulomb interaction (EEI) quantum correction (QC) is solely responsible for the upturn in "zero-field" and "in-field" ρx x(T ) at T

Spin transport study in a Rashba spin-orbit coupling system

PubMed Central

Mei, Fuhong; Zhang, Shan; Tang, Ning; Duan, Junxi; Xu, Fujun; Chen, Yonghai; Ge, Weikun; Shen, Bo

2014-01-01

One of the most important topics in spintronics is spin transport. In this work, spin transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructure were studied by helicity-dependent photocurrent measurements at room temperature. Spin-related photocurrent was detected under normal incidence of a circularly polarized laser with a Gaussian distribution. On one hand, spin polarized electrons excited by the laser generate a diffusive spin polarization current, which leads to a vortex charge current as a result of anomalous circular photogalvanic effect. On the other hand, photo-induced spin polarized electrons driven by a longitudinal electric field give rise to a transverse current via anomalous Hall Effect. Both of these effects originated from the Rashba spin-orbit coupling. By analyzing spin-related photocurrent varied with laser position, the contributions of the two effects were differentiated and the ratio of the spin diffusion coefficient to photo-induced anomalous spin Hall mobility Ds/μs = 0.08 V was extracted at room temperature. PMID:24504193

Investigation of the unidirectional spin heat conveyer effect in a 200 nm thin Yttrium Iron Garnet film

NASA Astrophysics Data System (ADS)

Wid, Olga; Bauer, Jan; Müller, Alexander; Breitenstein, Otwin; Parkin, Stuart S. P.; Schmidt, Georg

2016-06-01

We have investigated the unidirectional spin wave heat conveyer effect in sub-micron thick yttrium iron garnet (YIG) films using lock-in thermography (LIT). Although the effect is small in thin layers this technique allows us to observe asymmetric heat transport by magnons which leads to asymmetric temperature profiles differing by several mK on both sides of the exciting antenna, respectively. Comparison of Damon-Eshbach and backward volume modes shows that the unidirectional heat flow is indeed due to non-reciprocal spin-waves. Because of the finite linewidth, small asymmetries can still be observed when only the uniform mode of ferromagnetic resonance is excited. The latter is of extreme importance for example when measuring the inverse spin-Hall effect because the temperature differences can result in thermovoltages at the contacts. Because of the non-reciprocity these thermovoltages reverse their sign with a reversal of the magnetic field which is typically deemed the signature of the inverse spin-Hall voltage.

Complex Terahertz and Direct Current Inverse Spin Hall Effect in YIG/Cu1-xIrx Bilayers Across a Wide Concentration Range.

PubMed

Cramer, Joel; Seifert, Tom; Kronenberg, Alexander; Fuhrmann, Felix; Jakob, Gerhard; Jourdan, Martin; Kampfrath, Tobias; Kläui, Mathias

2018-02-14

We measure the inverse spin Hall effect of Cu 1-x Ir x thin films on yttrium iron garnet over a wide range of Ir concentrations (0.05 ⩽ x ⩽ 0.7). Spin currents are triggered through the spin Seebeck effect, either by a continuous (dc) temperature gradient or by ultrafast optical heating of the metal layer. The spin Hall current is detected by electrical contacts or measurement of the emitted terahertz radiation. With both approaches, we reveal the same Ir concentration dependence that follows a novel complex, nonmonotonous behavior as compared to previous studies. For small Ir concentrations a signal minimum is observed, whereas a pronounced maximum appears near the equiatomic composition. We identify this behavior as originating from the interplay of different spin Hall mechanisms as well as a concentration-dependent variation of the integrated spin current density in Cu 1-x Ir x . The coinciding results obtained for dc and ultrafast stimuli provide further support that the spin Seebeck effect extends to terahertz frequencies, thus enabling a transfer of established spintronic measurement schemes into the terahertz regime. Our findings also show that the studied material allows for efficient spin-to-charge conversion even on ultrafast time scales.

Magneto hall effect on unsteady elastico-viscous nanofluid slip flow in a channel in presence of thermal radiation and heat generation with Brownian motion

NASA Astrophysics Data System (ADS)

Karim, M. Enamul; Samad, M. Abdus; Ferdows, M.

2017-06-01

The present note investigates the magneto hall effect on unsteady flow of elastico-viscous nanofluid in a channel with slip boundary considering the presence of thermal radiation and heat generation with Brownian motion. Numerical results are achieved by solving the governing equations by the implicit Finite Difference Method (FDM) obtaining primary and secondary velocities, temperature, nanoparticles volume fraction and concentration distributions within the boundary layer entering into the problem. The influences of several interesting parameters such as elastico-viscous parameter, magnetic field, hall parameter, heat generation, thermal radiation and Brownian motion parameters on velocity, heat and mass transfer characteristics of the fluid flow are discussed with the help of graphs. Also the effects of the pertinent parameters, which are of physical and engineering interest, such as Skin friction parameter, Nusselt number and Sherwood number are sorted out. It is found that the flow field and other quantities of physical concern are significantly influenced by these parameters.

Hall and transverse even effects in the vicinity of a quantum critical point in Tm{sub 1-x}Yb{sub x}B{sub 12}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sluchanko, N. E., E-mail: nes@lt.gpi.ru; Azarevich, A. N.; Bogach, A. V.

2012-09-15

The angular, temperature, and magnetic field dependences of the resistance recorded in the Hall effect geometry are studied for the rare-earth dodecaboride Tm{sub 1-x}Yb{sub x}B{sub 12} solid solutions where the metal-insulator and antiferromagnetic-paramagnetic phase transitions are observed in the vicinity of the quantum critical point x{sub c} Almost-Equal-To 0.3. The measurements performed on high-quality single crystals in the temperature range 1.9-300 K for the first time have revealed the appearance of the second harmonic contribution, a transverse even effect in these fcc compounds near the quantum critical point. This contribution a is found to increase drastically both under the Tm-to-ytterbiummore » substitution in the range x > x{sub c} and with an increase in the external magnetic field. Moreover, as the Yb concentration x increases, a negative peak of a significant amplitude appears on the temperature dependences of the Hall coefficient R{sub H}(T) for the Tm{sup 1-x}Yb{sub x}B{sub 12} compounds, in contrast to the invariable behavior R{sub H}(T) Almost-Equal-To const found for TmB{sub 12}. The complicated activation-type behavior of the Hall coefficient is observed at intermediate temperatures for x {>=} 0.5 with activation energies E{sub g}/k{sub B} Almost-Equal-To 200 K and E{sub a}/k{sub B} 55-75 K, and the sign inversion of R{sub H}(T) is detected at liquid-helium temperatures in the coherent regime. Renormalization effects in the electron density of states induced by variation of the Yb concentration are analyzed. The anomalies of the charge transport in Tm{sub 1-x}Yb{sub x}B{sub 12} solid solutions in various regimes (charge gap formation, intra-gap many-body resonance, and coherent regime) are discussed in detail and the results are interpreted in terms of the electron phase separation effects in combination with the formation of nanosize clusters of rare earth ions in the cage-glass state of the studied dodecaborides. The data obtained allow concluding that the emergence of Yb-Yb dimers in the Tm{sub 1-x}Yb{sub x}B{sub 12} cage-glass matrix is the origin of the metal-insulator transition observed in the achetypal strongly correlated electron system of YbB{sub 12}.« less

Design and Characterization of a Three-Axis Hall Effect-Based Soft Skin Sensor.

PubMed

Tomo, Tito Pradhono; Somlor, Sophon; Schmitz, Alexander; Jamone, Lorenzo; Huang, Weijie; Kristanto, Harris; Sugano, Shigeki

2016-04-07

This paper presents an easy means to produce a 3-axis Hall effect-based skin sensor for robotic applications. It uses an off-the-shelf chip and is physically small and provides digital output. Furthermore, the sensor has a soft exterior for safe interactions with the environment; in particular it uses soft silicone with about an 8 mm thickness. Tests were performed to evaluate the drift due to temperature changes, and a compensation using the integral temperature sensor was implemented. Furthermore, the hysteresis and the crosstalk between the 3-axis measurements were evaluated. The sensor is able to detect minimal forces of about 1 gf. The sensor was calibrated and results with total forces up to 1450 gf in the normal and tangential directions of the sensor are presented. The test revealed that the sensor is able to measure the different components of the force vector.

Experimental and Numerical Examination of a Hall Thruster Plume (Preprint)

DTIC Science & Technology

2007-07-31

Hall thruster has been characterized through measurements from various plasma electrostatic probes. Ion current flux, plasma potential, plasma density, and electron temperatures were measured from the near-field plume to 60 cm downstream of the exit plane. These experimentally derived measurements were compared to numerical simulations run with the plasma plume code DRACO. A major goal of this study was to determine the fidelity of the DRACO numerical simulation. The effect of background pressure on the thruster plume was also examined using ion current flux measurements

Energy-related environmental and economic performance analysis of two different types of electrically heated student residence halls

NASA Astrophysics Data System (ADS)

Amber, Khuram Pervez; Aslam, Muhammad Waqar

2018-03-01

Student residence halls occupy 26% of the total area of a typical university campus in the UK and are directly responsible for 24% of university's annual CO2 emissions. Based on five years measured data, this paper aims to investigate the energy-related environmental and economic performance of electrically heated residence halls in which space heating is provided by two different types of electric heaters, that is, panel heater (PHT) and storage heater (SHT). Secondly, using statistical and machine learning methods, the paper attempts to investigate the relationship between daily electricity consumption and five factors (ambient temperature, solar radiation, relative humidity, wind speed and type of day). Data analysis revealed that electricity consumption of both halls is mainly driven by ambient temperature only, whereas SHT residence has 39% higher annual electricity bill and emits 70% higher CO2 emissions on a per square metre basis compared to the PHT residence hall.

Hall-plot of the phase diagram for Ba(Fe1-xCox)2As2

NASA Astrophysics Data System (ADS)

Iida, Kazumasa; Grinenko, Vadim; Kurth, Fritz; Ichinose, Ataru; Tsukada, Ichiro; Ahrens, Eike; Pukenas, Aurimas; Chekhonin, Paul; Skrotzki, Werner; Teresiak, Angelika; Hühne, Ruben; Aswartham, Saicharan; Wurmehl, Sabine; Mönch, Ingolf; Erbe, Manuela; Hänisch, Jens; Holzapfel, Bernhard; Drechsler, Stefan-Ludwig; Efremov, Dmitri V.

2016-06-01

The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by , where e is the charge of the carrier, and n is the concentration. However, it is well known that in the critical region near a quantum phase transition, as it was demonstrated for cuprates and heavy fermions, the Hall coefficient exhibits strong temperature and doping dependencies, which can not be described by such a simple expression, and the interpretation of the Hall coefficient for Fe-based superconductors is also problematic. Here, we investigate thin films of Ba(Fe1-xCox)2As2 with compressive and tensile in-plane strain in a wide range of Co doping. Such in-plane strain changes the band structure of the compounds, resulting in various shifts of the whole phase diagram as a function of Co doping. We show that the resultant phase diagrams for different strain states can be mapped onto a single phase diagram with the Hall number. This universal plot is attributed to the critical fluctuations in multiband systems near the antiferromagnetic transition, which may suggest a direct link between magnetic and superconducting properties in the BaFe2As2 system.

Quantum Hall signatures of dipolar Mahan excitons

NASA Astrophysics Data System (ADS)

Schinner, G. J.; Repp, J.; Kowalik-Seidl, K.; Schubert, E.; Stallhofer, M. P.; Rai, A. K.; Reuter, D.; Wieck, A. D.; Govorov, A. O.; Holleitner, A. W.; Kotthaus, J. P.

2013-01-01

We explore the photoluminescence of spatially indirect, dipolar Mahan excitons in a gated double quantum well diode containing a mesoscopic electrostatic trap for neutral dipolar excitons at low temperatures down to 250 mK and in quantizing magnetic fields. Mahan excitons in the surrounding of the trap, consisting of individual holes interacting with a degenerate two-dimensional electron system confined in one of the quantum wells, exhibit strong quantum Hall signatures at integer filling factors and related anomalies around filling factor ν=(2)/(3),(3)/(5), and (1)/(2), reflecting the formation of composite fermions. Interactions across the trap perimeter are found to influence the energy of the confined neutral dipolar excitons by the presence of the quantum Hall effects in the two-dimensional electron system surrounding the trap.

Long-term variations and trends in the polar E-region

NASA Astrophysics Data System (ADS)

Bjoland, L. M.; Ogawa, Y.; Hall, C.; Rietveld, M.; Løvhaug, U. P.; La Hoz, C.; Miyaoka, H.

2017-10-01

As the EISCAT UHF radar system in Northern Scandinavia started its operations in the early 1980s, the collected data cover about three solar cycles. These long time-series provide us the opportunity to study long-term variations and trends of ionospheric parameters in the high latitude region. In the present study we have used the EISCAT Tromsø UHF data to investigate variations of the Hall conductivity and ion temperatures in the E-region around noon. Both the ion temperature and the peak altitude of the Hall conductivity are confirmed to depend strongly on solar zenith angle. However, the dependence on solar activity seems to be weak. In order to search for trends in these parameters, the ion temperature and peak altitude of the Hall conductivity data were adjusted for their seasonal and solar cycle dependence. A very weak descent (∼0.2 km/ decade) was seen in the peak altitude of the Hall conductivity. The ion temperature at 110 km shows a cooling trend (∼10 K/ decade). However, other parameters than solar zenith angle and solar activity seem to affect the ion temperature at this altitude, and a better understanding of these parameters is necessary to derive a conclusive trend. In this paper, we discuss what may cause the characteristics of the variations in the electric conductivities and ion temperatures in the high latitude region.

Charge carrier coherence and Hall effect in organic semiconductors.

PubMed

Yi, H T; Gartstein, Y N; Podzorov, V

2016-03-30

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures.

PubMed

Mani, Ramesh G; Smet, Jürgen H; von Klitzing, Klaus; Narayanamurti, Venkatesh; Johnson, William B; Umansky, Vladimir

2002-12-12

The observation of vanishing electrical resistance in condensed matter has led to the discovery of new phenomena such as, for example, superconductivity, where a zero-resistance state can be detected in a metal below a transition temperature T(c) (ref. 1). More recently, quantum Hall effects were discovered from investigations of zero-resistance states at low temperatures and high magnetic fields in two-dimensional electron systems (2DESs). In quantum Hall systems and superconductors, zero-resistance states often coincide with the appearance of a gap in the energy spectrum. Here we report the observation of zero-resistance states and energy gaps in a surprising setting: ultrahigh-mobility GaAs/AlGaAs heterostructures that contain a 2DES exhibit vanishing diagonal resistance without Hall resistance quantization at low temperatures and low magnetic fields when the specimen is subjected to electromagnetic wave excitation. Zero-resistance-states occur about magnetic fields B = 4/5 Bf and B = 4/9 Bf, where Bf = 2pifm*/e,m* is the electron mass, e is the electron charge, and f is the electromagnetic-wave frequency. Activated transport measurements on the resistance minima also indicate an energy gap at the Fermi level. The results suggest an unexpected radiation-induced, electronic-state-transition in the GaAs/AlGaAs 2DES.

Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In2O3 films

NASA Astrophysics Data System (ADS)

Preissler, Natalie; Bierwagen, Oliver; Ramu, Ashok T.; Speck, James S.

2013-08-01

A comprehensive study of the room-temperature electrical and electrothermal transport of single-crystalline indium oxide (In2O3) and indium tin oxide (ITO) films over a wide range of electron concentrations is reported. We measured the room-temperature Hall mobility μH and Seebeck coefficient S of unintentionally doped and Sn-doped high-quality, plasma-assisted molecular-beam-epitaxy-grown In2O3 for volume Hall electron concentrations nH from 7×1016 cm-3 (unintentionally doped) to 1×1021 cm-3 (highly Sn-doped, ITO). The resulting empirical S(nH) relation can be directly used in other In2O3 samples to estimate the volume electron concentration from simple Seebeck coefficient measurements. The mobility and Seebeck coefficient were modeled by a numerical solution of the Boltzmann transport equation. Ionized impurity scattering and polar optical phonon scattering were found to be the dominant scattering mechanisms. Acoustic phonon scattering was found to be negligible. Fitting the temperature-dependent mobility above room temperature of an In2O3 film with high mobility allowed us to find the effective Debye temperature (ΘD=700 K) and number of phonon modes (NOPML=1.33) that best describe the polar optical phonon scattering. The modeling also yielded the Hall scattering factor rH as a function of electron concentration, which is not negligible (rH≈1.4) at nondegenerate electron concentrations. Fitting the Hall-scattering-factor corrected concentration-dependent Seebeck coefficient S(n) for nondegenerate samples to the numerical solution of the Boltzmann transport equation and to widely used, simplified equations allowed us to extract an effective electron mass of m*=(0.30±0.03)me (with free electron mass me). The modeled mobility and Seebeck coefficient based on polar optical phonon and ionized impurity scattering describes the experimental results very accurately up to electron concentrations of 1019 cm-3, and qualitatively explains a mobility plateau or local maximum around 1020 cm-3. Ionized impurity scattering with doubly charged donors best describes the mobility in our unintentionally doped films, consistent with oxygen vacancies as unintentional shallow donors, whereas singly charged donors best describe our Sn-doped films. Our modeling yields a (phonon-limited) maximum theoretical drift mobility and Hall mobility of μ=190 cm2/Vs and μH=270 cm2/Vs, respectively. Simplified equations for the Seebeck coefficient describe the measured values in the nondegenerate regime using a Seebeck scattering parameter of r=-0.55 (which is consistent with the determined Debye temperature), and provide an estimate of the Seebeck coefficient to lower electron concentrations. The simplified equations fail to describe the Seebeck coefficient around the Mott transition (nMott=5.5×1018 cm-3) from nondegenerate to degenerate electron concentrations, whereas the numerical modeling accurately describes this region.

Large magnetoresistance and Hall effect in paramagnetic black phosphorus synthesized from red phosphorus

NASA Astrophysics Data System (ADS)

Jiang, X. H.; Xiong, F.; Zhang, X. W.; Hua, Z. H.; Wang, Z. H.; Yang, S. G.

2018-05-01

Black phosphorus (BP) is an important material, which can be used in the fabrication of phosphorene. In this manuscript, a systematic study was described on the high-pressure synthesis of BP from red phosphorus. For physical characterization, the bulk BP was synthesized under the high pressure of 1.6 GPa and high temperature of 700 °C for 2 h. X-ray diffraction and Raman studies illustrated the formation of high-quality pure phase pleomorphic BP. A nonlinear Hall effect was observed in the BP sample. Magnetoresistance (MR) in the bulk BP reached 90% at 40 K, and positive-to-negative crossover in MR was measured. A paramagnetic feature was found in the prepared bulk BP, and the MR results were attributed to the combination of the effect of classical resistor network and magnetic polaron. The conduction tensors were analyzed by a two-band model to determine the carrier concentration and mobility at several temperatures.

Thermopower and the Fractional Quantized Hall Effect in the N=1 Landau Level

NASA Astrophysics Data System (ADS)

Chickering, W. E.; Eisenstein, J. P.; Pfeiffer, L. N.; West, K. W.

2012-02-01

Having recently eliminated an issue involving long thermal time constants [1], we are now able to resolve diffusion thermopower deep into the fractional quantized Hall effect (FQHE) regime. In this talk we report measurements of thermopower in the first excited (N=1) Landau level as a continuous function of magnetic field down to temperatures as low as 30mK. Above 50mK we can clearly resolve the ν = 5/2 as well as ν = 7/3, 8/3, and 14/5 FQHEs in both the electrical and thermoelectrical transport. Below 50mK a prominent feature of the electrical transport in the first excited Landau level is the Re-entrant Integer Quantized Hall Effect (RIQHE) which is associated with insulating collective phases [2]. In this temperature regime the thermopower exhibits a series of intriguing sign reversals that are as yet not fully understood. We will conclude with a brief discussion of the connection between thermopower and the entropy of the 2D electron system. This connection is invoked by a recent prediction [3] of the thermopower at ν = 5/2, which assumes the ground state is the non-Abelian Moore-Read paired composite fermion state.[4pt] [1] Chickering, Phys. Rev. B 81, 245319 (2010)[0pt] [2] Eisenstein, Phys. Rev. Lett. 88, 076801 (2002)[0pt] [3] Yang, Phys. Rev. B 79, 115317 (2009)

Room temperature quantum spin Hall insulators with a buckled square lattice.

PubMed

Luo, Wei; Xiang, Hongjun

2015-05-13

Two-dimensional (2D) topological insulators (TIs), also known as quantum spin Hall (QSH) insulators, are excellent candidates for coherent spin transport related applications because the edge states of 2D TIs are robust against nonmagnetic impurities since the only available backscattering channel is forbidden. Currently, most known 2D TIs are based on a hexagonal (specifically, honeycomb) lattice. Here, we propose that there exists the quantum spin Hall effect (QSHE) in a buckled square lattice. Through performing global structure optimization, we predict a new three-layer quasi-2D (Q2D) structure, which has the lowest energy among all structures with the thickness less than 6.0 Å for the BiF system. It is identified to be a Q2D TI with a large band gap (0.69 eV). The electronic states of the Q2D BiF system near the Fermi level are mainly contributed by the middle Bi square lattice, which are sandwiched by two inert BiF2 layers. This is beneficial since the interaction between a substrate and the Q2D material may not change the topological properties of the system, as we demonstrate in the case of the NaF substrate. Finally, we come up with a new tight-binding model for a two-orbital system with the buckled square lattice to explain the low-energy physics of the Q2D BiF material. Our study not only predicts a QSH insulator for realistic room temperature applications but also provides a new lattice system for engineering topological states such as quantum anomalous Hall effect.

Competing Grain Boundary and Interior Deformation Mechanisms with Varying Sizes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Wei; Gao, Yanfei; Nieh, T. G.

In typical coarse-grained alloys, the dominant plastic deformations are dislocation gliding or climbing, and material strengths can be tuned by dislocation interactions with grain boundaries, precipitates, solid solutions, and other defects. With the reduction of grain size, the increase of material strengths follows the classic Hall-Petch relationship up to nano-grained materials. Even at room temperatures, nano-grained materials exhibit strength softening, or called the inverse Hall-Petch effect, as grain boundary processes take over as the dominant deformation mechanisms. On the other hand, at elevated temperatures, grain boundary processes compete with grain interior deformation mechanisms over a wide range of the appliedmore » stress and grain sizes. This book chapter reviews and compares the rate equation model and the microstructure-based finite element simulations. The latter explicitly accounts for the grain boundary sliding, grain boundary diffusion and migration, as well as the grain interior dislocation creep. Therefore the explicit finite element method has clear advantages in problems where microstructural heterogeneities play a critical role, such as in the gradient microstructure in shot peening or weldment. Furthermore, combined with the Hall-Petch effect and its breakdown, the above competing processes help construct deformation mechanism maps by extending from the classic Frost-Ashby type to the ones with the dependence of grain size.« less

Electron-Fluxon Approach to the Quantum Hall Effect

NASA Astrophysics Data System (ADS)

Fujita, Shigeji; Morabito, David; Godoy, Salvador

2001-04-01

Experimental data by Willett et al.(R. Willett et al.), Phys. Rev. Lett. 59, 1776 (1987). show that the Hall resistivity ρ_xy at the extreme low temperatures has plateaus at fractional occupation ratios (2D electron density / fluxon density) ν with odd denominators, where the longitudinal resistivity ρ_xx (nearly) vanishes. The plateau heights are quantized in units of h/e^2. Each plateau is material- and shape-independent and indicates the stability of the superconducting state. The same data show that ρ_xy is linear in B at ν=1/2, where ρ_xx has a small dip, indicating a Fermi-liquid-like state with a different kind of stability. We develop a microscopic theory of the quantum Hall effect in analogy with the theory of the high temperature superconductivity, regarding the fluxon as a quantum particle with half spin and zero mass. Each Landau level, E=(N+1/2)hbar ω_0, ω_0=eB/m, has a great degeneracy. Exchange of a longitudinal phonon can generate an attractive transition between the degenerate states. The same exchange can also pair-create electron-fluxon composites, bosonic and fermionic depending on the number of fluxons. The model accounts for the energy gap at each plateau, ensuring the stability of the superconducting state.

Magneto-transport properties of As-implanted highly oriented pyrolytic graphite

NASA Astrophysics Data System (ADS)

de Jesus, R. F.; Camargo, B. C.; da Silva, R. R.; Kopelevich, Y.; Behar, M.; Gusmão, M. A.; Pureur, P.

2016-11-01

We report on magneto-transport experiments in a high-quality sample of highly-oriented pyrolytic graphite (HOPG). Magneto-resistance and Hall resistivity measurements were carried out in magnetic inductions up to B = 9 T applied parallel to the c-axis at fixed temperatures between T=2 K and T=12 K. The sample was submitted to three subsequent irradiations with As ions. The implanted As contents were 2.5, 5 and 10 at% at the maximum of the distribution profile. Experiments were performed after each implantation stage. Shubnikov-de Haas (SdH) oscillations were observed in both the magneto-resistance and Hall-effect measurements. Analyses of these results with fast Fourier transform (FFT) lead to fundamental frequencies and effective masses for electrons and holes that are independent of the implantation fluences. The Hall resistivity at low temperatures shows a sign reversal as a function of the field in all implanted states. We interpret the obtained results with basis on a qualitative model that supposes the existence of an extrinsic hole density associated to the defect structure of our sample. We conclude that the As implantation does not produce a semiconductor-type doping in our HOPG sample. Instead, an increase in the extrinsic hole density is likely to occur as a consequence of disorder induced by implantation.

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

NASA Astrophysics Data System (ADS)

Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Suda, Jun

2016-05-01

Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm-3 (lightly doped) to 3.8 × 1019 cm-3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of the p-GaN was 4 × 106 cm-2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 160 to 450 K. A low compensation ratio of less than 1% was revealed. We also obtained the depth of the Mg acceptor level of 235 meV considering the lowering effect by the Coulomb potential of ionized acceptors. The hole mobilities of 33 cm2 V-1 s-1 at 300 K and 72 cm2 V-1 s-1 at 200 K were observed in lightly doped p-GaN.

Intrinsic Electron Mobility Exceeding 10³ cm²/(V s) in Multilayer InSe FETs.

PubMed

Sucharitakul, Sukrit; Goble, Nicholas J; Kumar, U Rajesh; Sankar, Raman; Bogorad, Zachary A; Chou, Fang-Cheng; Chen, Yit-Tsong; Gao, Xuan P A

2015-06-10

Graphene-like two-dimensional (2D) materials not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe, a III-VI semiconductor, not only is a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multilayer InSe FET devices. Through back gating and Hall measurement in four-probe configuration, the device's field effect mobility and intrinsic Hall mobility were extracted at various temperatures to study the material's intrinsic transport behavior and the effect of dielectric substrate. The sample's field effect and Hall mobilities over the range of 20-300 K fall in the range of 0.1-2.0 × 10(3) cm(2)/(V s), which are comparable or better than the state of the art FETs made of widely studied 2D transition metal dichalcogenides.

Effect of the Low-Temperature Annealing on Zn-Doped Indium-Tin-Oxide Films for Silicon Heterojunction Solar Cells

NASA Astrophysics Data System (ADS)

Lee, Seunghun; Lee, Jong-Han; Tark, Sung Ju; Choi, Suyoung; Kim, Chan Seok; Lee, Jeong Chul; Kim, Won Mok; Kim, Donghwan

2012-10-01

The effects of the low-temperature annealing on Zn-doped indium-tin-oxide (ITO) films such as the electrical, optical and structural properties were investigated. Zn-doped ITO films were fabricated by rf magnetron sputtering of ITO and Al-doped ZnO (AZO) targets on corning glass at room temperature. The content of Zn increased with increasing the power of AZO target. The carrier concentration of films shows the decreasing behaviour with increasing the content of Zn, due to a carrier compensation originating from the substitution of a doped Zn for an In or interstitial site. After the low-temperature annealing at 180 °C in vacuum, all films were slightly decreased a carrier concentration and increased the hall mobility because of the absorption of oxygen on the surface films. In addition, the average transmittance did not show a considerable change and had a high values over 80%. Especially, the Zn-doped ITO with atomic ratio of Zn/(In+Zn) of 6.8 at. % had the resistivity of 4×10-4 Ω cm, the highest hall mobility of 41 cm2 V-1 s-1, and the average transmittance of 82%.

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe3 -xGeTe2

NASA Astrophysics Data System (ADS)

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus; Petrovic, C.

2018-04-01

We report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe3 -xGeTe2 (x ≈0.36 ) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρx y/μ0Heff and longitudinal resistivity ρxx 2M /μ0Heff implies that the AHE in Fe3 -xGeTe2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear-M Hall conductivity σxy A below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.

Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs

NASA Astrophysics Data System (ADS)

Kim, B. W.; Majerfeld, A.

1996-02-01

We solve a pair of Boltzmann transport equations based on an interacting two-isotropic-band model in a general way first to get transport parameters corresponding to the relaxation time. We present a simple method to calculate effective relaxation times, separately for each band, which compensate for the inherent deficiencies in using the relaxation time concept for polar optical-phonon scattering. Formulas for calculating momentum relaxation times in the two-band model are presented for all the major scattering mechanisms of p-type GaAs for simple, practical mobility calculations. In the newly proposed theoretical framework, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain direct comparisons between the theory and recently available experimental results. In the calculations, the light-hole-band nonparabolicity is taken into account on the average by the use of energy-dependent effective mass obtained from the kṡp method and valence-band anisotropy is taken partly into account by the use the Wiley's overlap function.. The calculated Hall mobilities show a good agreement with our experimental data for carbon-doped p-GaAs samples in the range of degenerate hole densities. The calculated Hall factors show rH=1.25-1.75 over hole densities of 2×1017-1×1020 cm-3.

Integrated Stirling Convertor and Hall Thruster Test Conducted

NASA Technical Reports Server (NTRS)

Mason, Lee S.

2002-01-01

An important aspect of implementing Stirling Radioisotope Generators on future NASA missions is the integration of the generator and controller with potential spacecraft loads. Some recent studies have indicated that the combination of Stirling Radioisotope Generators and electric propulsion devices offer significant trip time and payload fraction benefits for deep space missions. A test was devised to begin to understand the interactions between Stirling generators and electric thrusters. An electrically heated RG- 350 (350-W output) Stirling convertor, designed and built by Stirling Technology Company of Kennewick, Washington, under a NASA Small Business Innovation Research agreement, was coupled to a 300-W SPT-50 Hall-effect thruster built for NASA by the Moscow Aviation Institute (RIAME). The RG-350 and the SPT-50 shown, were installed in adjacent vacuum chamber ports at NASA Glenn Research Center's Electric Propulsion Laboratory, Vacuum Facility 8. The Stirling electrical controller interfaced directly with the Hall thruster power-processing unit, both of which were located outside of the vacuum chamber. The power-processing unit accepted the 48 Vdc output from the Stirling controller and distributed the power to all the loads of the SPT-50, including the magnets, keeper, heater, and discharge. On February 28, 2001, the Glenn test team successfully operated the Hall-effect thruster with the Stirling convertor. This is the world's first known test of a dynamic power source with electric propulsion. The RG-350 successfully managed the transition from the purely resistive load bank within the Stirling controller to the highly capacitive power-processing unit load. At the time of the demonstration, the Stirling convertor was operating at a hot temperature of 530 C and a cold temperature of -6 C. The linear alternator was producing approximately 250 W at 109 Vac, while the power-processing unit was drawing 175 W at 48 Vdc. The majority of power was delivered to the Hall thruster discharge circuit operating at 115 Vdc and 0.9 A. Testing planned for late 2001 will examine the possibility of directly driving the Hall thruster discharge circuit using rectified and filtered output from the Stirling alternator.

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

PubMed

Wu, Jingjin; Zhao, Yinchao; Zhao, Ce Zhou; Yang, Li; Lu, Qifeng; Zhang, Qian; Smith, Jeremy; Zhao, Yongming

2016-08-13

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV-vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350-550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

PubMed Central

Wu, Jingjin; Zhao, Yinchao; Zhao, Ce Zhou; Yang, Li; Lu, Qifeng; Zhang, Qian; Smith, Jeremy; Zhao, Yongming

2016-01-01

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition. PMID:28773816

Conditions and growth rate of Rayleigh instability in a Hall thruster under the effect of ion temperature.

PubMed

Malik, Hitendra K; Singh, Sukhmander

2011-03-01

Rayleigh instability is investigated in a Hall thruster under the effect of finite temperature and density gradient of the plasma species. The instability occurs only when the frequency of the oscillations ω falls within a frequency band described by k{y}u₀+1/k_{y}∂²u_{0}/∂x²+Ω/k_{y}n_{0}∂n₀/∂x≪ω

Numerical study for peristalsis of Carreau-Yasuda nanomaterial with convective and zero mass flux condition

NASA Astrophysics Data System (ADS)

Hayat, T.; Ahmed, Bilal; Alsaedi, A.; Abbasi, F. M.

2018-03-01

The present communication investigates flow of Carreau-Yasuda nanofluid in presence of mixed convection and Hall current. Effects of viscous dissipation, Ohmic heating and convective conditions are addressed. In addition zero nanoparticle mass flux condition is imposed. Wave frame analysis is carried out. Coupled differential systems after long wavelength and low Reynolds number are numerically solved. Effects of different parameters on velocity, temperature and concentration are studied. Heat and mass transfer rates are analyzed through tabular values. It is observed that concentration for thermophoresis and Brownian motion parameters has opposite effect. Further heat and mass transfer rates at the upper wall enhances significantly when Hartman number increases and reverse situation is noticed for Hall parameter.

Hall coefficient measurement for residual stress assessment in precipitation hardened IN718 nickel-base superalloy

NASA Astrophysics Data System (ADS)

Velicheti, Dheeraj; Nagy, Peter B.; Hassan, Waled

2017-02-01

We investigated the feasibility of residual stress assessment based on Hall coefficient measurements in precipitation hardened IN718 nickel-base superalloy. As a first step, we studied the influence of microstructural variations on the galvanomagnetic properties of IN718 nickel-base superalloy. We found that the Hall coefficient of IN718 increases from ≈ 8.0×10-11 m3/C in its fully annealed state of 15 HRC Rockwell hardness to ≈ 9.4×10-11 m3/C in its fully hardened state of 45 HRC. We also studied the influence of cold work, i.e., plastic deformation, at room temperature and found that cold work had negligible effect on the Hall coefficient of fully annealed IN718, but significantly reduced it in hardened states of the material. For example, measurements conducted on fully hardened IN718 specimens showed that the Hall coefficient decreased more or less linearly with cold work from its peak value of ≈ 9.4×10-11 m3/C in its intact state to ≈ 9.0×10-11 m3/C in its most deformed state of 22% plastic strain. We also studied the influence of applied stress and found that elastic strain significantly increases the Hall coefficient of IN718 regardless of the state of hardening. The relative sensitivity of the Hall coefficient to elastic strain was measured as a unitless gauge factor K that is defined as the ratio of the relative change of the Hall coefficient ΔRH/RH divided by the axial strain ɛ = σ/E, where σ is the applied uniaxial stress and E is the Young's modulus of the material. We determined that the galvanomagnetic gauge factor of IN718 is κ ≈ 2.6 - 2.9 depending on the hardness level. Besides the fairly high value of the gauge factor, it is important that it is positive, which means that compressive stress in surface-treated components decreases the Hall coefficient in a similar way as plastic deformation does, therefore the unfortunate cancellation that occurs in fully hardened IN718 in the case of electric conductivity measurements will not happen in this case. Additionally, the temperature dependence of the Hall coefficient was measured at three different hardness levels and the influence of thermal exposure was studied in fully hardened IN718 up to 700 °C.

Charge carrier coherence and Hall effect in organic semiconductors

DOE PAGES

Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

2016-03-30

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force actingmore » on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.« less

Charge carrier coherence and Hall effect in organic semiconductors

PubMed Central

Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

2016-01-01

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

NASA Astrophysics Data System (ADS)

Ribeiro-Palau, R.; Lafont, F.; Brun-Picard, J.; Kazazis, D.; Michon, A.; Cheynis, F.; Couturaud, O.; Consejo, C.; Jouault, B.; Poirier, W.; Schopfer, F.

2015-11-01

The quantum Hall effect provides a universal standard for electrical resistance that is theoretically based on only the Planck constant h and the electron charge e. Currently, this standard is implemented in GaAs/AlGaAs, but graphene's electronic properties have given hope for a more practical device. Here, we demonstrate that the experimental conditions necessary for the operation of devices made of high-quality graphene grown by chemical vapour deposition on silicon carbide can be extended and significantly relaxed compared with those for state-of-the-art GaAs/AlGaAs devices. In particular, the Hall resistance can be accurately quantized to within 1 × 10-9 over a 10 T wide range of magnetic flux density, down to 3.5 T, at a temperature of up to 10 K or with a current of up to 0.5 mA. This experimental simplification highlights the great potential of graphene in the development of user-friendly and versatile quantum standards that are compatible with broader industrial uses beyond those in national metrology institutes. Furthermore, the measured agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs, with an ultimate uncertainty of 8.2 × 10-11, supports the universality of the quantum Hall effect. This also provides evidence of the relation of the quantized Hall resistance with h and e, which is crucial for the new Système International d'unités to be based on fixing such fundamental constants of nature.

Performance of a Cylindrical Hall-Effect Thruster Using Permanent Magnets

NASA Technical Reports Server (NTRS)

Polzin, Kurt A.; Raitses, Y.; Merino, E.; Fisch, N. J.

2009-01-01

While annular Hall thrusters can operate at high efficiency at kW power levels, it is difficult to construct one that operates over a broad envelope from 1 kW down to 100 W while maintaining an efficiency of 45-55%. Scaling to low power while holding the main dimensionless parameters constant requires a decrease in the thruster channel size and an increase in the magnetic field strength. Increasing the magnetic field becomes technically challenging since the field can saturate the miniaturized inner components of the magnetic circuit and scaling down the magnetic circuit leaves very little room for magnetic pole pieces and heat shields. In addition, the central magnetic pole piece defining the interior wall of the annular channel can experience excessive heat loads in a miniaturized Hall thruster, with the temperature eventually exceeding the Curie temperature of the material and in extreme circumstances leading to accelerated erosion of the channel wall. An alternative approach is to employ a cylindrical Hall thruster (CHT) geometry. Laboratory model CHTs have operated at power levels ranging from 50 W up to 1 kW. These thrusters exhibit performance characteristics that are comparable to conventional, annular Hall thrusters of similar size. Compared to the annular Hall thruster, the CHTs insulator surface area to discharge chamber volume ratio is lower. Consequently, there is the potential for reduced wall losses in the channel of a CHT, and any reduction in wall losses should translate into lower channel heating rates and reduced erosion, making the CHT geometry promising for low-power applications. This potential for high performance in the low-power regime has served as the impetus for research and development efforts aimed at understanding and improving CHT performance. Recently, a 2.6 cm channel diameter permanent magnet CHT (shown in Fig. 1) was tested. This thruster has the promise of reduced power consumption over previous CHT iterations that employed electromagnets. Data are presented to expose the effect different controllable parameters have on the discharge and to summarize performance measurements (thrust, Isp, efficiency) obtained using a thrust stand. In addition, beam current data are presented to show the effect of the magnetic field topology on the plume profile and current utilization and to gain insight into the thruster s operation. These data extend and improve upon the results previously presented by the authors in Ref. [1].

Nonlinear radiative heat transfer and Hall effects on a viscous fluid in a semi-porous curved channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abbas, Z.; Naveed, M., E-mail: rana.m.naveed@gmail.com; Sajid, M.

In this paper, effects of Hall currents and nonlinear radiative heat transfer in a viscous fluid passing through a semi-porous curved channel coiled in a circle of radius R are analyzed. A curvilinear coordinate system is used to develop the mathematical model of the considered problem in the form partial differential equations. Similarity solutions of the governing boundary value problems are obtained numerically using shooting method. The results are also validated with the well-known finite difference technique known as the Keller-Box method. The analysis of the involved pertinent parameters on the velocity and temperature distributions is presented through graphs andmore » tables.« less

Conductivity predictions for the 5/2 fractional quantum Hall state using the composite fermion superconductor model

NASA Astrophysics Data System (ADS)

Foster, Kerwin Crayton

The fractional quantum Hall effect (FQHE) occurs when a two-dimensional electron gas is placed in a strong magnetic field at low temperatures. When this effect occurs the Hall resistance, RH, defined to be the Hall voltage divided by the current, is quantized, with RH = (1/nu)h/ e2 where nu = p/q is the Landau level filling fraction; and p and q are relatively prime integers. For almost all observed FQHE states, q is odd with one notable exception: the nu = 5/2 FQHE state. Understanding the nature of this incompressible even-denominator state is one of the central questions in the theory of the FQHE and is the subject of this Dissertation. We use a powerful theoretical tool for studying the FQHE: composite fermion theory. Composite fermions can be viewed as electrons bound to an even number of magnetic flux quanta. Jain has shown that the FQHE for electrons can be viewed as an integer quantum Hall effect (p = 1) for composite fermions. More recently, Halperin, Lee and Read developed a successful theory of the compressible nu = 1/2 state using composite fermions. There is now compelling theoretical evidence that the 5/2 state is a so-called Moore-Read state---a state which can be viewed as a spin-polarized p-wave superconductor of composite fermions. We have developed a semi-phenomenological description of this state by modifying the Halperin-Lee-Read theory, adding a p-wave pairing interaction between composite fermions by hand. The electromagnetic response functions for the resulting superconducting state of composite fermions are then calculated. We show that these response functions exhibit the expected BCS 'coherence factor' effects, such as the Hebel-Slichter peak. Using the composite fermion response functions, we then calculate the corresponding electronic response functions using Chern-Simons theory. We find that in the electronic response, the most striking coherence factor effects (e.g., the Hebel-Slichter peak) are strongly suppressed. However, the low-temperature o = 2Delta threshold behavior does show clear coherence factor effects. Finally, we use our model to predict the wave-vector and frequency dependence of the longitudinal conductivity, sigmaxx( q, o), which can be measured in surface-acoustic-wave propagation experiments.

Magnetotransport in two dimensional electron systems under microwave excitation and in highly oriented pyrolytic graphite

NASA Astrophysics Data System (ADS)

Ramanayaka, Aruna N.

This thesis consists of two parts. The first part considers the effect of microwave radiation on magnetotransport in high quality GaAs/AlGaAs heterostructure two dimensional electron systems. The effect of microwave (MW) radiation on electron temperature was studied by investigating the amplitude of the Shubnikov de Haas (SdH) oscillations in a regime where the cyclotron frequency o c and the MW angular frequency o satisfy 2o ≤ o c ≤ 3.5o. The results indicate negligible electron heating under modest MW photoexcitation, in agreement with theoretical predictions. Next, the effect of the polarization direction of the linearly polarized MWs on the MW induced magnetoresistance oscillation amplitude was investigated. The results demonstrate the first indications of polarization dependence of MW induced magnetoresistance oscillations. In the second part, experiments on the magnetotransport of three dimensional highly oriented pyrolytic graphite (HOPG) reveal a non-zero Berry phase for HOPG. Furthermore, a novel phase relation between oscillatory magneto- and Hall- resistances was discovered from the studies of the HOPG specimen. INDEX WORDS: Two dimensional electron systems, Magnetoresistance, Microwave induced magnetoresistance oscillations, Graphite, Quantum Hall effect, Hall effect, Resistivity rule, Shubnikov de Haas effect, Shubnikov de Haas oscillation.

Hall current effects in the Lewis magnetohydrodynamic generator

NASA Technical Reports Server (NTRS)

Nichols, L. D.; Sovie, R. J.

1972-01-01

Data obtained in a magnetohydrodynamic generator are compared with theoretical values calculated by using the Dzung theory. The generator was operated with cesium-seeded argon as the working fluid. The gas temperature varied from 1800 to 2100 K, the gas pressure from 19 to 22 N/sq cm, the Mach number from 0.3 to 0.5, and the magnetic field strength from 0.2 to 1.6 T. The analysis indicates that there is incomplete seed vaporization and that Hall current shorting paths (through the working fluid to ground at both the entrance and exit of the channel) limit generator performance.

Hall effects on MHD flow of heat generating/absorbing fluid through porous medium in a rotating parallel plate channel

NASA Astrophysics Data System (ADS)

Swarnalathamma, B. V.; Krishna, M. Veera

2017-07-01

We studied heat transfer on MHD convective flow of viscous electrically conducting heat generating/absorbing fluid through porous medium in a rotating channel under uniform transverse magnetic field normal to the channel and taking Hall current. The flow is governed by the Brinkman's model. The diagnostic solutions for the velocity and temperature are obtained by perturbation technique and computationally discussed with respect to flow parameters through the graphs. The skin friction and Nusselt number are also evaluated and computationally discussed with reference to pertinent parameters in detail.

Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, F.; Gao, K. H., E-mail: khgao@tju.edu.cn; Li, Z. Q.

2015-04-21

We study the effects of GaN interlayer on the transport properties of two-dimensional electron gases confined in lattice-matched AlInN/AlN/GaN heterostructures. It is found that the Hall mobility is evidently enhanced when an additional ultrathin GaN interlayer is introduced between AlInN and AlN layers. The enhancement of the Hall mobility is especially remarkable at low temperature. The high Hall mobility results in a low sheet resistance of 23 Ω/◻ at 2 K. Meanwhile, Shubnikov-de Haas oscillations (SdH) are also remarkably enhanced due to the existence of GaN interlayer. The enhancement of the SdH oscillations is related to the larger quantum mobility μ{sub q}more » owing to the suppression of the interface roughness, alloy disorder, and ionized impurity scatterings by the GaN interlayer.« less

Development of a Computationally Efficient, High Fidelity, Finite Element Based Hall Thruster Model

NASA Technical Reports Server (NTRS)

Jacobson, David (Technical Monitor); Roy, Subrata

2004-01-01

This report documents the development of a two dimensional finite element based numerical model for efficient characterization of the Hall thruster plasma dynamics in the framework of multi-fluid model. Effect of the ionization and the recombination has been included in the present model. Based on the experimental data, a third order polynomial in electron temperature is used to calculate the ionization rate. The neutral dynamics is included only through the neutral continuity equation in the presence of a uniform neutral flow. The electrons are modeled as magnetized and hot, whereas ions are assumed magnetized and cold. The dynamics of Hall thruster is also investigated in the presence of plasma-wall interaction. The plasma-wall interaction is a function of wall potential, which in turn is determined by the secondary electron emission and sputtering yield. The effect of secondary electron emission and sputter yield has been considered simultaneously, Simulation results are interpreted in the light of experimental observations and available numerical solutions in the literature.

Computed versus measured ion velocity distribution functions in a Hall effect thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garrigues, L.; CNRS, LAPLACE, F-31062 Toulouse; Mazouffre, S.

2012-06-01

We compare time-averaged and time-varying measured and computed ion velocity distribution functions in a Hall effect thruster for typical operating conditions. The ion properties are measured by means of laser induced fluorescence spectroscopy. Simulations of the plasma properties are performed with a two-dimensional hybrid model. In the electron fluid description of the hybrid model, the anomalous transport responsible for the electron diffusion across the magnetic field barrier is deduced from the experimental profile of the time-averaged electric field. The use of a steady state anomalous mobility profile allows the hybrid model to capture some properties like the time-averaged ion meanmore » velocity. Yet, the model fails at reproducing the time evolution of the ion velocity. This fact reveals a complex underlying physics that necessitates to account for the electron dynamics over a short time-scale. This study also shows the necessity for electron temperature measurements. Moreover, the strength of the self-magnetic field due to the rotating Hall current is found negligible.« less

Optical probing of quantum Hall effect of composite fermions and of the liquid-insulator transition

NASA Astrophysics Data System (ADS)

Rossella, F.; Bellani, V.; Dionigi, F.; Amado, M.; Diez, E.; Kowalik, K.; Biasiol, G.; Sorba, L.

2011-12-01

In the photoluminescence spectra of a two-dimensional electron gas in the fractional quantum Hall regime we observe the states at filling factors ν = 4/5, 5/7, 4/11 and 3/8 as clear minima in the intensity or area emission peak. The first three states are described as interacting composite fermions in fractional quantum Hall regime. The minimum in the intensity at ν = 3/8, which is not explained within this picture, can be an evidence of a suppression of the screening of the Coulomb interaction among the effective quasi-particles involved in this intriguing state. The magnetic field energy dispersion at very low temperatures is also discussed. At low field the emission follows a Landau dispersion with a screened magneto-Coulomb contribution. At intermediate fields the hidden symmetry manifests. At high field above ν = 1/3 the electrons correlate into an insulating phase, and the optical emission behaviour at the liquid-insulator transition is coherent with a charge ordering driven by Coulomb correlations.

Non-Contact Thermal Characterization of NASA's HERMeS Hall Thruster

NASA Technical Reports Server (NTRS)

Huang, Wensheng; Kamhawi, Hani; Myers, James L.; Yim, John T.; Neff, Gregory

2015-01-01

The thermal characterization test of NASA's 12.5-kW Hall Effect Rocket with Magnetic Shielding has been completed. This thruster was developed to support a number of potential Solar Electric Propulsion Technology Demonstration Mission concepts, including the Asteroid Redirect Robotic Mission concept. As a part of the preparation for this characterization test, an infrared-based, non-contact thermal imaging system was developed to measure the temperature of various thruster surfaces that are exposed to high voltage or plasma. An in-situ calibration array was incorporated into the setup to improve the accuracy of the temperature measurement. The key design parameters for the calibration array were determined in a separate pilot test. The raw data from the characterization test was analyzed though further work is needed to obtain accurate anode temperatures. Examination of the front pole and discharge channel temperatures showed that the thruster temperature was driven more by discharge voltage than by discharge power. Operation at lower discharge voltages also yielded more uniform temperature distributions than at higher discharge voltages. When operating at high discharge voltage, increasing the magnetic field strength appeared to have made the thermal loading azimuthally more uniform.

Temperature Ddependence of Anomalous Hall Conductivity in Rashba-type Ferromagnets

NASA Astrophysics Data System (ADS)

Sakuma, Akimasa

2018-03-01

We theoretically investigated the anomalous Hall conductivity (AHC) of Rashba-type ferromagnets at a finite temperature, taking into account spin fluctuation. We observed that the intrinsic AHC increases with increasing temperature. This can be understood from the characteristic nature of the spin chirality in the k-space, which increases with decreasing exchange splitting (EXS) when the spin-orbit interaction is much smaller than the EXS. The extrinsic part of the AHC also increases with temperature owing to the enhancement of the scattering strength of electrons due to the thermal fluctuation of the exchange field.

Thermoelectric Properties of Lanthanum Sulfide

NASA Technical Reports Server (NTRS)

Wood, C.; Lockwood, R.; Parker, J. B.; Zoltan, A.; Zoltan, L. D.; Danielson, L.; Raag, V.

1987-01-01

Report describes measurement of Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect in gamma-phase lanthanum sulfide with composition of La3-x S4. Results of study, part of search for high-temperature thermoelectric energy-conversion materials, indicate this sulfide behaves like extrinsic semiconductor over temperature range of 300 to 1,400 K, with degenerate carrier concentration controlled by stoichiometric ratio of La to S.

Design and Testing of a Hall Effect Thruster with 3D Printed Channel and Propellant Distributor

NASA Technical Reports Server (NTRS)

Hopping, Ethan P.; Xu, Kunning G.

2017-01-01

The UAH-78AM is a low-power Hall effect thruster developed at the University of Alabama in Huntsville with channel walls and a propellant distributor manufactured using 3D printing. The goal of this project is to assess the feasibility of using unconventional materials to produce a low-cost functioning Hall effect thruster and consider how additive manufacturing can expand the design space and provide other benefits. A version of the thruster was tested at NASA Glenn Research Center to obtain performance metrics and to validate the ability of the thruster to produce thrust and sustain a discharge. An overview of the thruster design and transient performance measurements are presented here. Measured thrust ranged from 17.2 millinewtons to 30.4 millinewtons over a discharge power of 280 watts to 520 watts with an anode I (sub SP)(Specific Impulse) range of 870 seconds to 1450 seconds. Temperature limitations of materials used for the channel walls and propellant distributor limit the ability to run the thruster at thermal steady-state.

Anomalous spin Hall magnetoresistance in Pt/Co bilayers

NASA Astrophysics Data System (ADS)

Kawaguchi, Masashi; Towa, Daiki; Lau, Yong-Chang; Takahashi, Saburo; Hayashi, Masamitsu

2018-05-01

We have studied the spin Hall magnetoresistance (SMR), the magnetoresistance within the plane transverse to the current flow, of Pt/Co bilayers. We find that the SMR increases with increasing Co thickness: the effective spin Hall angle for bilayers with thick Co exceeds the reported values of Pt when a conventional drift-diffusion model is used. An extended model including spin transport within the Co layer cannot account for the large SMR. To identify its origin, contributions from other sources are studied. For most bilayers, the SMR increases with decreasing temperature and increasing magnetic field, indicating that magnon-related effects in the Co layer play little role. Without the Pt layer, we do not observe the large SMR found for the Pt/Co bilayers with thick Co. Implementing the effect of the so-called interface magnetoresistance and the textured induced anisotropic scattering cannot account for the Co thickness dependent SMR. Since the large SMR is present for W/Co but its magnitude reduces in W/CoFeB, we infer that its origin is associated with a particular property of Co.

Large anomalous Hall effect in Pt interfaced with perpendicular anisotropy ferrimagnetic insulator

NASA Astrophysics Data System (ADS)

Tang, Chi; Sellappan, Pathikumar; Liu, Yawen; Garay, Javier; Shi, Jing; Shines Team

We demonstrate the strain induced perpendicular magnetic anisotropy (PMA) in a ferrimagnetic insulator (FMI), Tm3Fe5O12 (TIG) and the first observation of large anomalous Hall effect (AHE) in TIG/Pt bilayers. Atomically flat TIG films were deposited by a laser molecular beam epitaxy system on (111)-orientated substituted gadolinium gallium garnet substrates. The strength of PMA could be effectively tuned by controlling the oxygen pressure during deposition. Sharp squared anomalous Hall hysteresis loops were observed in bilayers of TIG/Pt over a range of thicknesses of Pt, with the maximum AHE conductivity reaching 1 S/cm at room temperature. The AHE vanishes when a 5 nm Cu layer was inserted between Pt and TIG, strongly indicating the proximity-induced ferromagnetism in Pt. The large AHE in the bilayer structures demonstrates a potential use of PMA-FMI related heterostructures in spintronics. This work was supported as part of the SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award # SC0012670.

Beyond the Quantum Hall Effect: New Phases of 2D Electrons at High Magnetic Field

NASA Astrophysics Data System (ADS)

Eisenstein, James

2007-03-01

In this talk I will discuss recent experiments on high mobility single and double layer 2D electron systems in which collective phases lying outside the usual quantum Hall effect paradigm have been detected and studied. For example, in single layer 2D systems near half-filling of highly excited Landau levels new states characterized by a massive anisotropy in the electrical resistivity of the sample are observed at very low temperature. The anisotropy has been widely interpreted as the signature of a new class of correlated electron phases which incorporate a stripe-like charge density modulation. Orientational ordering of small striped domains at low temperatures accounts for the resistive anisotropy and is reminiscent of the isotropic-to-nematic phase transition in classical liquid crystals. Double layer 2D electron systems possess collective phases not present in single layer systems. In particular, when the total number of electrons in the bilayer equals the degeneracy of a single Landau level, an unusual phase appears at small layer separation. This phase possesses a novel broken symmetry, spontaneous interlayer phase coherence, which has a number of dramatic experimental signatures. The interlayer tunneling conductance develops a strong and very sharp resonance around zero bias resembling the dc Josephson effect. At the same time, both the longitudinal and Hall resistances of the sample vanish at low temperatures when currents are driven in opposite directions through the two layers. These, and other observations are broadly consistent with theories in which the broken symmetry phase can equivalently be described as a pseudospin ferromagnet or an (imperfect) excitonic superfluid. This work reflects a collaboration with M.P. Lilly, K.B. Cooper, I.B. Spielman, M. Kellogg, L.A. Tracy, L.N. Pfeiffer, and K.W. West.

Measurement of filling factor 5/2 quasiparticle interference with observation of charge e/4 and e/2 period oscillations.

PubMed

Willett, R L; Pfeiffer, L N; West, K W

2009-06-02

A standing problem in low-dimensional electron systems is the nature of the 5/2 fractional quantum Hall (FQH) state: Its elementary excitations are a focus for both elucidating the state's properties and as candidates in methods to perform topological quantum computation. Interferometric devices may be used to manipulate and measure quantum Hall edge excitations. Here we use a small-area edge state interferometer designed to observe quasiparticle interference effects. Oscillations consistent in detail with the Aharonov-Bohm effect are observed for integer quantum Hall and FQH states (filling factors nu = 2, 5/3, and 7/3) with periods corresponding to their respective charges and magnetic field positions. With these factors as charge calibrations, periodic transmission through the device consistent with quasiparticle charge e/4 is observed at nu = 5/2 and at lowest temperatures. The principal finding of this work is that, in addition to these e/4 oscillations, periodic structures corresponding to e/2 are also observed at 5/2 nu and at lowest temperatures. Properties of the e/4 and e/2 oscillations are examined with the device sensitivity sufficient to observe temperature evolution of the 5/2 quasiparticle interference. In the model of quasiparticle interference, this presence of an effective e/2 period may empirically reflect an e/2 quasiparticle charge or may reflect multiple passes of the e/4 quasiparticle around the interferometer. These results are discussed within a picture of e/4 quasiparticle excitations potentially possessing non-Abelian statistics. These studies demonstrate the capacity to perform interferometry on 5/2 excitations and reveal properties important for understanding this state and its excitations.

Measurement of filling factor 5/2 quasiparticle interference with observation of charge e/4 and e/2 period oscillations

PubMed Central

Willett, R. L.; Pfeiffer, L. N.; West, K. W.

2009-01-01

A standing problem in low-dimensional electron systems is the nature of the 5/2 fractional quantum Hall (FQH) state: Its elementary excitations are a focus for both elucidating the state's properties and as candidates in methods to perform topological quantum computation. Interferometric devices may be used to manipulate and measure quantum Hall edge excitations. Here we use a small-area edge state interferometer designed to observe quasiparticle interference effects. Oscillations consistent in detail with the Aharonov–Bohm effect are observed for integer quantum Hall and FQH states (filling factors ν = 2, 5/3, and 7/3) with periods corresponding to their respective charges and magnetic field positions. With these factors as charge calibrations, periodic transmission through the device consistent with quasiparticle charge e/4 is observed at ν = 5/2 and at lowest temperatures. The principal finding of this work is that, in addition to these e/4 oscillations, periodic structures corresponding to e/2 are also observed at 5/2 ν and at lowest temperatures. Properties of the e/4 and e/2 oscillations are examined with the device sensitivity sufficient to observe temperature evolution of the 5/2 quasiparticle interference. In the model of quasiparticle interference, this presence of an effective e/2 period may empirically reflect an e/2 quasiparticle charge or may reflect multiple passes of the e/4 quasiparticle around the interferometer. These results are discussed within a picture of e/4 quasiparticle excitations potentially possessing non-Abelian statistics. These studies demonstrate the capacity to perform interferometry on 5/2 excitations and reveal properties important for understanding this state and its excitations. PMID:19433804

Topological Weyl superconductor to diffusive thermal Hall metal crossover in the B phase of UPt3

NASA Astrophysics Data System (ADS)

Goswami, Pallab; Nevidomskyy, Andriy H.

2015-12-01

The recent phase-sensitive measurements in the superconducting B phase of UPt3 provide strong evidence for the triplet, chiral kz(kx±i ky) 2 pairing symmetries, which endow the Cooper pairs with orbital angular momentum projections Lz=±2 along the c axis. In the absence of disorder such pairing can support both line and point nodes, and both types of nodal quasiparticles exhibit nontrivial topology in the momentum space. The point nodes, located at the intersections of the closed Fermi surfaces with the c axis, act as the double monopoles and the antimonopoles of the Berry curvature, and generalize the notion of Weyl quasiparticles. Consequently, the B phase should support an anomalous thermal Hall effect, the polar Kerr effect, in addition to the protected Fermi arcs on the (1 ,0 ,0 ) and the (0 ,1 ,0 ) surfaces. The line node at the Fermi surface equator acts as a vortex loop in the momentum space and gives rise to the zero-energy, dispersionless Andreev bound states on the (0 ,0 ,1 ) surface. At the transition from the B phase to the A phase, the time-reversal symmetry is restored, and only the line node survives inside the A phase. As both line and double-Weyl point nodes possess linearly vanishing density of states, we show that weak disorder acts as a marginally relevant perturbation. Consequently, an infinitesimal amount of disorder destroys the ballistic quasiparticle pole, while giving rise to a diffusive phase with a finite density of states at the zero energy. The resulting diffusive phase exhibits T -linear specific heat, and an anomalous thermal Hall effect. We predict that the low-temperature thermodynamic and transport properties display a crossover between a ballistic thermal Hall semimetal and a diffusive thermal Hall metal. By contrast, the diffusive phase obtained from a time-reversal-invariant pairing exhibits only the T -linear specific heat without any anomalous thermal Hall effect.

B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system.

PubMed

Liu, Han-Chun; Reichl, C; Wegscheider, W; Mani, R G

2018-05-18

We report the observation of dc-current-bias-induced B-periodic Hall resistance oscillations and Hall plateaus in the GaAs/AlGaAs 2D system under combined microwave radiation- and dc bias excitation at liquid helium temperatures. The Hall resistance oscillations and plateaus appear together with concomitant oscillations also in the diagonal magnetoresistance. The periods of Hall and diagonal resistance oscillations are nearly identical, and source power (P) dependent measurements demonstrate sub-linear relationship of the oscillation amplitude with P over the span 0 < P ≤ 20 mW.

Direct detection of spin Nernst effect in platinum

NASA Astrophysics Data System (ADS)

Bose, A.; Bhuktare, S.; Singh, H.; Dutta, S.; Achanta, V. G.; Tulapurkar, A. A.

2018-04-01

Generation of spin current lies at the heart of spintronic research. The spin Hall effect and the spin Seebeck effect have drawn considerable attention in the last few years to create pure spin current by heavy metals and ferromagnets, respectively. In this work, we show the direct evidence of heat current to spin current conversion in non-magnetic Platinum by the spin Nernst effect (SNE) at room temperature. This is the thermal analogue of the spin Hall effect in non-magnets. We have shown that the 8 K/μm thermal gradient in Pt can lead to the generation of pure spin current density of the order of 108 A/m2 by virtue of SNE. This opens up an additional possibility to couple the relativistic spin-orbit interaction with the thermal gradient for spintronic applications.

Enhanced thermo-spin effects in iron-oxide/metal multilayers

NASA Astrophysics Data System (ADS)

Ramos, R.; Lucas, I.; Algarabel, P. A.; Morellón, L.; Uchida, K.; Saitoh, E.; Ibarra, M. R.

2018-06-01

Since the discovery of the spin Seebeck effect (SSE), much attention has been devoted to the study of the interaction between heat, spin, and charge in magnetic systems. The SSE refers to the generation of a spin current upon the application of a thermal gradient and detected by means of the inverse spin Hall effect. Conversely, the spin Peltier effect (SPE) refers to the generation of a heat current as a result of a spin current induced by the spin Hall effect. Here we report a strong enhancement of both the SSE and SPE in Fe3O4/Pt multilayered thin films at room temperature as a result of an increased thermo-spin conversion efficiency in the multilayers. These results open the possibility to design thin film heterostructures that may boost the application of thermal spin currents in spintronics.

Analysis of YBCO high temperature superconductor doped with silver nanoparticles and carbon nanotubes using Williamson-Hall and size-strain plot

NASA Astrophysics Data System (ADS)

Dadras, Sedigheh; Davoudiniya, Masoumeh

2018-05-01

This paper sets out to investigate and compare the effects of Ag nanoparticles and carbon nanotubes (CNTs) doping on the mechanical properties of Y1Ba2Cu3O7-δ (YBCO) high temperature superconductor. For this purpose, the pure and doped YBCO samples were synthesized by sol-gel method. The microstructural analysis of the samples is performed using X-ray diffraction (XRD). The crystalline size, lattice strain and stress of the pure and doped YBCO samples were estimated by modified forms of Williamson-Hall analysis (W-H), namely, uniform deformation model (UDM), uniform deformation stress model (UDSM) and the size-strain plot method (SSP). These results show that the crystalline size, lattice strain and stress of the YBCO samples declined by Ag nanoparticles and CNTs doping.

First- and second-order metal-insulator phase transitions and topological aspects of a Hubbard-Rashba system

NASA Astrophysics Data System (ADS)

Marcelino, Edgar

2017-05-01

This paper considers a model consisting of a kinetic term, Rashba spin-orbit coupling and short-range Coulomb interaction at zero temperature. The Coulomb interaction is decoupled by a mean-field approximation in the spin channel using field theory methods. The results feature a first-order phase transition for any finite value of the chemical potential and quantum criticality for vanishing chemical potential. The Hall conductivity is also computed using the Kubo formula in a mean-field effective Hamiltonian. In the limit of infinite mass the kinetic term vanishes and all the phase transitions are of second order; in this case the spontaneous symmetry-breaking mechanism adds a ferromagnetic metallic phase to the system and features a zero-temperature quantization of the Hall conductivity in the insulating one.

Topological Sachdev-Ye-Kitaev model

NASA Astrophysics Data System (ADS)

Zhang, Pengfei; Zhai, Hui

2018-05-01

In this Rapid Communication, we construct a large-N exactly solvable model to study the interplay between interaction and topology, by connecting the Sachdev-Ye-Kitaev (SYK) model with constant hopping. The hopping forms a band structure that can exhibit both topologically trivial and nontrivial phases. Starting from a topologically trivial insulator with zero Hall conductance, we show that the interaction can drive a phase transition to a topologically nontrivial insulator with quantized nonzero Hall conductance, and a single gapless Dirac fermion emerges when the interaction is fine tuned to the critical point. The finite temperature effect is also considered, and we show that the topological phase with a stronger interaction is less stable against temperature. Our model provides a concrete example to illustrate the interacting topological phases and phase transitions, and can shed light on similar problems in physical systems.

Scaling in Plateau-to-Plateau Transition: A Direct Connection of Quantum Hall Systems with the Anderson Localization Model

NASA Astrophysics Data System (ADS)

Li, Wanli; Vicente, C. L.; Xia, J. S.; Pan, W.; Tsui, D. C.; Pfeiffer, L. N.; West, K. W.

2009-05-01

The quantum Hall-plateau transition was studied at temperatures down to 1 mK in a random alloy disordered high mobility two-dimensional electron gas. A perfect power-law scaling with κ=0.42 was observed from 1.2 K down to 12 mK. This perfect scaling terminates sharply at a saturation temperature of Ts˜10mK. The saturation is identified as a finite-size effect when the quantum phase coherence length (Lϕ∝T-p/2) reaches the sample size (W) of millimeter scale. From a size dependent study, Ts∝W-1 was observed and p=2 was obtained. The exponent of the localization length, determined directly from the measured κ and p, is ν=2.38, and the dynamic critical exponent z=1.

Intrinsic Dirac half-metal and quantum anomalous Hall phase in a hexagonal metal-oxide lattice

NASA Astrophysics Data System (ADS)

Zhang, Shou-juan; Zhang, Chang-wen; Zhang, Shu-feng; Ji, Wei-xiao; Li, Ping; Wang, Pei-ji; Li, Sheng-shi; Yan, Shi-shen

2017-11-01

The quantum anomalous Hall (QAH) effect has attracted extensive attention due to time-reversal symmetry broken by a staggered magnetic flux emerging from ferromagnetic ordering and spin-orbit coupling. However, the experimental observations of the QAH effect are still challenging due to its small nontrivial bulk gap. Here, based on density functional theory and Berry curvature calculations, we propose the realization of intrinsic QAH effect in two-dimensional hexagonal metal-oxide lattice, N b2O3 , which is characterized by the nonzero Chern number (C =1 ) and chiral edge states. Spin-polarized calculations indicate that it exhibits a Dirac half-metal feature with temperature as large as TC=392 K using spin-wave theory. When the spin-orbit coupling is switched on, N b2O3 becomes a QAH insulator. Notably, the nontrivial topology is robust against biaxial strain with its band gap reaching up to Eg=75 meV , which is far beyond room temperature. A tight-binding model is further constructed to understand the origin of nontrivially electronic properties. Our findings on the Dirac half-metal and room-temperature QAH effect in the N b2O3 lattice can serve as an ideal platform for developing future topotronics devices.

Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si

NASA Astrophysics Data System (ADS)

Lou, Paul C.; Kumar, Sandeep

2018-04-01

Spin current experiences minimal dephasing and scattering in Si due to small spin-orbit coupling and spin-lattice interactions is the primary source of spin relaxation. We hypothesize that if the specimen dimension is of the same order as the spin diffusion length then spin polarization will lead to non-equilibrium spin accumulation and emergent phase transition. In n-Si, spin diffusion length has been reported up to 6 μm. The spin accumulation in Si will modify the thermal transport behavior of Si, which can be detected with thermal characterization. In this study, we report observation of spin-Hall effect and emergent antiferromagnetic phase transition behavior using magneto-electro-thermal transport characterization. The freestanding Pd (1 nm)/Ni80Fe20 (75 nm)/MgO (1 nm)/n-Si (2 μm) thin film specimen exhibits a magnetic field dependent thermal transport and spin-Hall magnetoresistance behavior attributed to Rashba effect. An emergent phase transition is discovered using self-heating 3ω method, which shows a diverging behavior at 270 K as a function of temperature similar to a second order phase transition. We propose that spin-Hall effect leads to the spin accumulation and resulting emergent antiferromagnetic phase transition. We propose that the length scale for Rashba effect can be equal to the spin diffusion length and two-dimensional electron gas is not essential for it. The emergent antiferromagnetic phase transition is attributed to the site inversion asymmetry in diamond cubic Si lattice.

A low-temperature study of manganese-induced ferromagnetism and valence band convergence in tin telluride

DOE PAGES

Chi, Hang; Tan, Gangjian; Kanatzidis, Mercouri G.; ...

2016-05-02

In this study, SnTe is renowned for its promise in advancing energy-related technologies based on thermoelectricity and for its topological crystalline insulator character. Here, we demonstrate that each Mn atom introduces ~4 μ B (Bohr magneton) of magnetic moment to Sn 1–xMn xTe. The Curie temperatureTC reaches ~14K for x = 0.12, as observed in the field dependent hysteresis of magnetization and the anomalous Hall effect. In accordance with a modified two-band electronic Kane model, the light L-valence-band and the heavy Σ-valence-band gradually converge in energy with increasing Mn concentration, leading to a decreasing ordinary Hall coefficient R H andmore » a favorably enhanced Seebeck coefficient S at the same time. With the thermal conductivityκ lowered chiefly via point defects associated with the incorporation of Mn, the strategy of Mn doping also bodes well for efficient thermoelectric applications at elevated temperatures.« less

Above 400-K robust perpendicular ferromagnetic phase in a topological insulator

PubMed Central

Tang, Chi; Chang, Cui-Zu; Zhao, Gejian; Liu, Yawen; Jiang, Zilong; Liu, Chao-Xing; McCartney, Martha R.; Smith, David J.; Chen, Tingyong; Moodera, Jagadeesh S.; Shi, Jing

2017-01-01

The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TIs) exhibits many fascinating physical properties for potential applications in nanoelectronics and spintronics. However, in transition metal–doped TIs, the only experimentally demonstrated QAHE system to date, the QAHE is lost at practically relevant temperatures. This constraint is imposed by the relatively low Curie temperature (Tc) and inherent spin disorder associated with the random magnetic dopants. We demonstrate drastically enhanced Tc by exchange coupling TIs to Tm3Fe5O12, a high-Tc magnetic insulator with perpendicular magnetic anisotropy. Signatures showing that the TI surface states acquire robust ferromagnetism are revealed by distinct squared anomalous Hall hysteresis loops at 400 K. Point-contact Andreev reflection spectroscopy confirms that the TI surface is spin-polarized. The greatly enhanced Tc, absence of spin disorder, and perpendicular anisotropy are all essential to the occurrence of the QAHE at high temperatures. PMID:28691097

Development and Testing of High Current Hollow Cathodes for High Power Hall Thrusters

NASA Technical Reports Server (NTRS)

Kamhawi, Hani; Van Noord, Jonathan

2012-01-01

NASA's Office of the Chief Technologist In-Space Propulsion project is sponsoring the testing and development of high power Hall thrusters for implementation in NASA missions. As part of the project, NASA Glenn Research Center is developing and testing new high current hollow cathode assemblies that can meet and exceed the required discharge current and life-time requirements of high power Hall thrusters. This paper presents test results of three high current hollow cathode configurations. Test results indicated that two novel emitter configurations were able to attain lower peak emitter temperatures compared to state-of-the-art emitter configurations. One hollow cathode configuration attained a cathode orifice plate tip temperature of 1132 degC at a discharge current of 100 A. More specifically, test and analysis results indicated that a novel emitter configuration had minimal temperature gradient along its length. Future work will include cathode wear tests, and internal emitter temperature and plasma properties measurements along with detailed physics based modeling.

Spin Hall magnetoresistance in the non-collinear ferrimagnet GdIG close to the compensation temperature

DOE PAGES

Dong, Bo -Wen; Cramer, Joel; Ganzhorn, Kathrin; ...

2017-12-14

We investigate the spin Hall magnetoresistance (SMR) in a gadolinium iron garnet (GdIG)/platinum (Pt) heterostructure by angular dependent magnetoresistance measurements. The magnetic structure of the ferromagnetic insulator GdIG is non-collinear near the compensation temperature, while it is collinear far from the compensation temperature. In the collinear regime, the SMR signal in GdIG is consistent with the usualmore » $${\\rm si}{{{\\rm n}}^{2}}\\theta $$ relation well established in the collinear magnet yttrium iron garnet, with $$\\theta $$ the angle between magnetization and spin Hall spin polarization direction. In the non-collinear regime, both an SMR signal with inverted sign and a more complex angular dependence with four maxima are observed within one sweep cycle. The number of maxima as well as the relative strength of different maxima depend strongly on temperature and field strength. Lastly, our results evidence a complex SMR behavior in the non-collinear magnetic regime that goes beyond the conventional formalism developed for collinear magnetic structures.« less

Spin Hall magnetoresistance in the non-collinear ferrimagnet GdIG close to the compensation temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Bo -Wen; Cramer, Joel; Ganzhorn, Kathrin

We investigate the spin Hall magnetoresistance (SMR) in a gadolinium iron garnet (GdIG)/platinum (Pt) heterostructure by angular dependent magnetoresistance measurements. The magnetic structure of the ferromagnetic insulator GdIG is non-collinear near the compensation temperature, while it is collinear far from the compensation temperature. In the collinear regime, the SMR signal in GdIG is consistent with the usualmore » $${\\rm si}{{{\\rm n}}^{2}}\\theta $$ relation well established in the collinear magnet yttrium iron garnet, with $$\\theta $$ the angle between magnetization and spin Hall spin polarization direction. In the non-collinear regime, both an SMR signal with inverted sign and a more complex angular dependence with four maxima are observed within one sweep cycle. The number of maxima as well as the relative strength of different maxima depend strongly on temperature and field strength. Lastly, our results evidence a complex SMR behavior in the non-collinear magnetic regime that goes beyond the conventional formalism developed for collinear magnetic structures.« less

Quantum Transport near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Pan, W.; Klem, J. F.; Kim, J. K.; Thalakulam, M.; Cich, M. J.; Lyo, S. K.

2013-03-01

We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e2 / h develops at the CNP and it follows semi-logarithmic temperature dependence. In quantized magnetic (B) fields and at low temperatures, well developed integer quantum Hall states are observed in the electron as well as hole regimes. Electron transport shows noisy behavior around the CNP at extremely high B fields. When the diagonal conductivity σxx is plotted against the Hall conductivity σxy, a conductivity circle law is discovered, suggesting a chaotic quantum transport behavior. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Local light-induced magnetization using nanodots and chiral molecules.

PubMed

Dor, Oren Ben; Morali, Noam; Yochelis, Shira; Baczewski, Lech Tomasz; Paltiel, Yossi

2014-11-12

With the increasing demand for miniaturization, nanostructures are likely to become the primary components of future integrated circuits. Different approaches are being pursued toward achieving efficient electronics, among which are spin electronics devices (spintronics). In principle, the application of spintronics should result in reducing the power consumption of electronic devices. Recently a new, promising, effective approach for spintronics has emerged, using spin selectivity in electron transport through chiral molecules. In this work, using chiral molecules and nanocrystals, we achieve local spin-based magnetization generated optically at ambient temperatures. Through the chiral layer, a spin torque can be transferred without permanent charge transfer from the nanocrystals to a thin ferromagnetic layer, creating local perpendicular magnetization. We used Hall sensor configuration and atomic force microscopy (AFM) to measure the induced local magnetization. At low temperatures, anomalous spin Hall effects were measured using a thin Ni layer. The results may lead to optically controlled spintronics logic devices that will enable low power consumption, high density, and cheap fabrication.

Design and Testing of a Hall Effect Thruster with Additively Manufactured Components

NASA Astrophysics Data System (ADS)

Hopping, Ethan

The UAH-78AM is a low-power Hall effect thruster developed at the University of Alabama in Huntsville to study the application of low-cost additive manufacturing in the design and fabrication of Hall thrusters. The goal of this project is to assess the feasibility of using unconventional materials to produce a low-cost functioning Hall effect thruster and consider how additive manufacturing can expand the design space and provide other benefits. The thruster features channel walls and a propellant distributor that were manufactured using 3D printing with a variety of materials including ABS, ULTEM, and glazed ceramic. A version of the thruster was tested at NASA Glenn Research Center to obtain performance metrics and to validate the ability of the thruster to produce thrust and sustain a discharge. The design of the thruster and the transient performance measurements are presented here. Measured thrust ranged from 17.2 mN to 30.4 mN over a discharge power of 280 W to 520 W with an anode Isp range of 870 s to 1450 s. Temperature limitations of materials used for the channel walls and propellant distributor limit the ability to run the thruster at thermal steady-state. While the current thruster design is not yet ready for continuous operation, revisions to the device that could enable longer duration tests are discussed.

Structural, magnetic, and electrical properties of perpendicularly magnetized Mn4-xFexGe thin films

NASA Astrophysics Data System (ADS)

Niesen, Alessia; Teichert, Niclas; Matalla-Wagner, Tristan; Balluf, Jan; Dohmeier, Niklas; Glas, Manuel; Klewe, Christoph; Arenholz, Elke; Schmalhorst, Jan-Michael; Reiss, Günter

2018-03-01

We investigated the structural, magnetic, and electrical properties of the perpendicularly magnetized Mn4-xFexGe thin films (0.3 ≤ x ≤ 1). The tetragonally distorted structure was verified for all investigated stoichiometries. High coercive fields in the range of 1.61 T to 3.64 T at room temperature were measured and showed increasing behavior with decreasing Fe content. The magnetic moments range from (0.16 ± 0.02) μB/f.u for Mn3Fe1Ge to (0.08 ± 0.01) μB/f.u for Mn3.4Fe0.6Ge. X-ray absorption spectroscopy revealed ferromagnetic coupling of the Mn and Fe atoms in Mn4-xFexGe and the ferrimagnetic ordering of the Mn magnetic moments. Anomalous Hall effect measurements showed sharp magnetization switching. The resistivity values are in the range of 207 μΩ cm to 457 μΩ cm depending on the stoichiometry. From the contribution of the ordinary Hall effect in the anomalous Hall effect measurements, Hall constants, the charge carrier density, and mobility were deduced. The thermal conductivity was calculated using the Wiedemann-Franz law. All these values are strongly influenced by the stoichiometry. An alternative method was introduced for the determination of perpendicular magnetic anisotropy. The values range between 0.26 MJ/m3 and 0.36 MJ/m3.

Effect of Segmented Electrode Length on the Performances of an Aton-Type Hall Thruster

NASA Astrophysics Data System (ADS)

Duan, Ping; Bian, Xingyu; Cao, Anning; Liu, Guangrui; Chen, Long; Yin, Yan

2016-05-01

The influences of the low-emissive graphite segmented electrode placed near the channel exit on the discharge characteristics of a Hall thruster are studied using the particle-in-cell method. A two-dimensional physical model is established according to the Hall thruster discharge channel configuration. The effects of electrode length on the potential, ion density, electron temperature, ionization rate and discharge current are investigated. It is found that, with the increasing of the segmented electrode length, the equipotential lines bend towards the channel exit, and approximately parallel to the wall at the channel surface, the radial velocity and radial flow of ions are increased, and the electron temperature is also enhanced. Due to the conductive characteristic of electrodes, the radial electric field and the axial electron conductivity near the wall are enhanced, and the probability of the electron-atom ionization is reduced, which leads to the degradation of the ionization rate in the discharge channel. However, the interaction between electrons and the wall enhances the near wall conductivity, therefore the discharge current grows along with the segmented electrode length, and the performance of the thruster is also affected. supported by National Natural Science Foundation of China (Nos. 11375039 and 11275034) and the Key Project of Science and Technology of Liaoning Province, China (No. 2011224007) and the Fundamental Research Funds for the Central Universities, China (No. 3132014328)

Quasiparticle Excitations with Berry Curvature in Insulating Magnets and Weyl Semimetals

NASA Astrophysics Data System (ADS)

Hirschberger, Maximilian Anton

The concept of the geometric Berry phase of the quantum mechanical wave function has led to a better theoretical understanding of natural phenomena in all fields of fundamental physics research. In condensed matter physics, the impact of this theoretical discovery has been particularly profound: The quantum Hall effect, the anomalous Hall effect, the quantum spin Hall effect, magnetic skyrmions, topological insulators, and topological semimetals are but a few subfields that have witnessed rapid developments over the three decades since Michael Berry's landmark paper. In this thesis, I will present and discuss the results of three experiments where Berry's phase leads to qualitatively new transport behavior of electrons or magnetic spin excitations in solids. We introduce the theoretical framework that leads to the prediction of a thermal Hall effect of magnons in Cu(1,3-bdc), a simple two-dimensional layered ferromagnet on a Kagome net of spin S = 1/2 copper atoms. Combining our experimental results measured down to very low temperatures T = 0.3 K with published data from inelastic neutron scattering, we report a quantitative comparison with the theory. This confirms the expected net Berry curvature of the magnon band dispersion in this material. Secondly, we have studied the thermal Hall effect in the frustrated pyrochlore magnet Tb2Ti2O7, where the thermal Hall effect is large in the absence of long-range magnetic order. We establish the magnetic nature of the thermal Hall effect in Tb2Ti2O7, introducing this material as the first example of a paramagnet with non-trivial low-lying spin excitations. Comparing our results to other materials with zero thermal Hall effect such as the classical spin ice Dy2Ti 2O7 and the non-magnetic analogue Y2Ti2O 7, we carefully discuss the experimental limitations of our setup and rule out spurious background signals. The third and final chapter of this thesis is dedicated to electrical transport and thermopower experiments on the half-Heusler material GdPtBi. A careful doping study of the negative longitudinal magnetoresistance (LMR) establishes GdPtBi as a new material platform to study the physical properties of a simple Weyl metal with only two Weyl points (for magnetic field along the crystallographic 〈111〉 direction). The negative LMR is associated with the theory of the chiral anomaly in solids, and a direct consequence of the nonzero Berry curvature of the energy band structure of a Weyl semimetal. We compare our results to detailed calculations of the electronic band structure. Moving beyond the negative LMR, we report for the first time the effect of the chiral anomaly on the longitudinal thermopower in a Weyl semimetal.

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 − x GeTe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus

2018-04-09

Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se

NASA Astrophysics Data System (ADS)

Yan, J.; Luo, X.; Chen, F. C.; Pei, Q. L.; Lin, G. T.; Han, Y. Y.; Hu, L.; Tong, P.; Song, W. H.; Zhu, X. B.; Sun, Y. P.

2017-07-01

Cr0.68Se single crystals with two-dimensional (2D) character have been grown, and the detailed magnetization M(T), electrical transport properties (including longitudinal resistivity ρxx and Hall resistivity ρxy), and thermal transport properties [including heat capacity Cp(T) and thermoelectric power S(T)] have been measured. There are some interesting phenomena: (i) Cr0.68Se presents a non-collinear antiferromagnetic (AFM) semiconducting behavior at the Néel temperature of TN = 42 K and with the activated energy of Eg = 3.9 meV; (ii) it exhibits the anomalous Hall effect (AHE) below TN and large negative magnetoresistance about 83.7% (2 K, 8.5 T). The AHE coefficient RS is 0.385 cm-3/C at T = 2 K, and the AHE conductivity σH is about 1 Ω-1 cm-1 at T = 40 K; (iii) the scaling behavior between the anomalous Hall resistivity ρxy A and the longitudinal resistivity ρxx is linear, and further analysis implies that the origin of the AHE in Cr0.68Se is dominated by the skew-scattering mechanism. Our results may be helpful for exploring the potential application of these kinds of 2D AFM semiconductors.

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 - x GeTe 2

DOE PAGES

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus; ...

2018-04-09

Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe 3 - x GeTe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus

Here, we report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe 3–xGeTe 2 (x ≈ 0.36) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρxy/μ0Heff and longitudinal resistivity ρ 2 xxM/μ 0H eff impliesmore » that the AHE in Fe 3–xGeTe 2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear- M Hall conductivity σ A xy below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.« less

Observation of the Quantum Hall Effect in Confined Films of the Three-Dimensional Dirac Semimetal Cd3 As2

NASA Astrophysics Data System (ADS)

Schumann, Timo; Galletti, Luca; Kealhofer, David A.; Kim, Honggyu; Goyal, Manik; Stemmer, Susanne

2018-01-01

The magnetotransport properties of epitaxial films of Cd3 As2 , a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological materials. Our results also demonstrate that heterostructuring approaches can be used to study and engineer quantum states in topological semimetals.

Magnetic Chern bands and triplon Hall effect in an extended Shastry-Sutherland model

NASA Astrophysics Data System (ADS)

Malki, M.; Schmidt, K. P.

2017-05-01

We study topological properties of one-triplon bands in an extended Shastry-Sutherland model relevant for the frustrated quantum magnet SrCu2(BO3)2 . To this end perturbative continuous unitary transformations are applied about the isolated dimer limit allowing us to calculate the one-triplon dispersion up to high order in various couplings including intra- and interdimer Dzyaloshinskii-Moriya interactions and a general uniform magnetic field. We determine the Berry curvature and the Chern number of the different one-triplon bands. We demonstrate the occurrence of Chern numbers ±1 and ±2 for the case that two components of the magnetic field are finite. Finally, we also calculate the triplon Hall effect arising at finite temperatures.

Magnon Hall effect on the Lieb lattice.

PubMed

Cao, Xiaodong; Chen, Kai; He, Dahai

2015-04-29

Ferromagnetic insulators without inversion symmetry may show magnon Hall effect (MHE) in the presence of a temperature gradient due to the existence of Dzyaloshinskii-Moriya interaction (DMI). In this theoretical study, we investigate MHE on a lattice with inversion symmetry, namely the Lieb lattice, where the DMI is introduced by adding an external electric field. We show the nontrivial topology of this model by examining the existence of edge states and computing the topological phase diagram characterized by the Chern numbers of different bands. Together with the topological phase diagram, we can further determine the sign and magnitude of the transverse thermal conductivity. The impact of the flat band possessed by this model on the thermal conductivity is discussed by computing the Berry curvature analytically.

Solid state switch panel. [determination of optimum transducer type for required switches

NASA Technical Reports Server (NTRS)

Beenfeldt, E.

1973-01-01

An intensive study of various forms of transducers was conducted with application towards hermetically sealing the transducer and all electronics. The results of the study indicated that the Hall effect devices and a LED/phototransistor combination were the most practical for this type of application. Therefore, hardware was developed utilizing a magnet/Hall effect transducer for single action switches and LED/phototransistor transducers for rotary multiposition or potentiometer applications. All electronics could be housed in a hermetically sealed compartment. A number of switches were built and models were hermetically sealed to prove the feasibility of this type of fabrication. One of each type of switch was subjected to temperature cycling, vibration, and EMI tests. The results of these tests are presented.

Low-temperature dependence of the thermomagnetic transport properties of the SrTiO3/LaAlO3 interface

NASA Astrophysics Data System (ADS)

Lerer, S.; Ben Shalom, M.; Deutscher, G.; Dagan, Y.

2011-08-01

Transport measurements are reported, including Hall, Seebeck, and Nernst effects. All of these transport properties exhibit anomalous field and temperature dependencies, with a change of behavior observed at H˜1.5 T and T˜15 K. The low-temperature, low-field behaviors of all transport properties were reconciled using a simple two-band analysis. A more detailed model is required in order to explain the high-magnetic-field regime.

Temperature Dependent Resistivity and Hall Effect in Proton Irradiated CdS Thin Films

NASA Astrophysics Data System (ADS)

Guster, B.; Ghenescu, V.; Ion, L.; Radu, A.; Porumb, O.; Antohe, S.

2011-10-01

Cadmium sulphide finds extensive applications in a variety of optoelectronic devices. In particular, CdS thin films are suitable for use as windows in heterojunction solar cells that employ CdTe, Cu2S or CuInSe2 as an absorber. Such thin film based solar cells are well suited for use in space technology. For that specific application, it is important to know how ionizing radiations alter their performance. We have investigated the effects of irradiation with high energy protons (3 MeV), at 1014 fluency, on electrical properties of polycrystalline CdS thin layers. The samples were prepared by thermal vacuum deposition from single source onto optical glass substrate. Temperature dependent electrical resistivity and Hall effect, before and after irradiation, were recorded from 300 K down to 4 K. The experimental results can be explained in the frame of a two-band model. Above 100 K electrical properties are controlled by a defect level of donor type, with an ionization energy of about 0.060 eV. The possible origin of this defect is discussed.

Characterization of a Hall Effect Thruster Using Thermal Imaging

DTIC Science & Technology

2007-03-01

to physically attach the thermocouples to the object, which is destructive to the item being monitored if a strong adhesive or welding is used...by detecting incident thermal radiation and converting it to a temperature. A thermistor bolometer, for example, consists of a material, usually

Normal state transport studies of Bi2Sr2 Ca n-1CunOy thin films at different doping levels and manifestation of the pseudogap

NASA Astrophysics Data System (ADS)

Raffy, H.

2002-03-01

We have studied the evolution of the transport properties of Bi2Sr2 Ca n-1CunOy (n=1, 2) epitaxial thin films as function of doping p. For each phase, this was done on a single film by changing the oxygen content going from a maximally overdoped to a strongly underdoped non superconducting state(Z. Konstantinovic, Z.Z. Li and H. Raffy, Physica C 351, 163 (2001)). The behaviour of the resistance versus T and of the Hall effect will be described in the different regions of the phase diagram. In the underdoped region the pseudogap manifests itself on R(T) by a more rapid decrease or a reduction of the scattering rate below a temperature T*, representing an energy /temperature scale. It is observed that the resistivity curves can be scaled to a universal curve as a function of T/T*. Magnetoresistance measurements performed up to 20 Teslas do not show any significant change of this curve or of T*. The Hall constant RH(T) shows similar temperature dependence for both phases, with a broad maximum around 100K. The cotangent of the Hall angle can be described, above a temperature T0 (p), by a law of the form a+bT^m with 1.65

Turbulence Measurements in a Tropical Zoo Hall

NASA Astrophysics Data System (ADS)

Eugster, Werner; Denzler, Basil; Bogdal, Christian

2017-04-01

The Masoala rainforest hall of the Zurich Zoo, Switzerland, covers a ground surface area of 10,856 m2 and reaches 30 m in height. With its transparent ETFE foiled roof it provides a tropical climate for a large diversity of plants and animals. In combination with an effort to estimate dry deposition of elemental mercury, we made an attempt to measure turbulent transfer velocity with an ultrasonic anemometer inside the hall. Not surprising, the largest turbulence elements were on the order of the hall dimension. Although the dimensions of the hall seem to be small (200,000 m3) for eddy covariance flux measurements and the air circulation inside the hall was extremely weak, the spectra of wind velocity components and virtual (sonic) temperature obeyed the general statistical description expected under unconstrained outdoor measurement conditions. We will present results from a two-week measurement campaign in the Masoala rainforest hall and make a suggestion for the deposition velocity to be used to estimate dry deposition of atmospheric components to the tropical vegetation surface.

Study on the influences of ionization region material arrangement on Hall thruster channel discharge characteristics

NASA Astrophysics Data System (ADS)

Xiang, HU; Ping, DUAN; Jilei, SONG; Wenqing, LI; Long, CHEN; Xingyu, BIAN

2018-02-01

There exists strong interaction between the plasma and channel wall in the Hall thruster, which greatly affects the discharge performance of the thruster. In this paper, a two-dimensional physical model is established based on the actual size of an Aton P70 Hall thruster discharge channel. The particle-in-cell simulation method is applied to study the influences of segmented low emissive graphite electrode biased with anode voltage on the discharge characteristics of the Hall thruster channel. The influences of segmented electrode placed at the ionization region on electric potential, ion number density, electron temperature, ionization rate, discharge current and specific impulse are discussed. The results show that, when segmented electrode is placed at the ionization region, the axial length of the acceleration region is shortened, the equipotential lines tend to be vertical with wall at the acceleration region, thus radial velocity of ions is reduced along with the wall corrosion. The axial position of the maximal electron temperature moves towards the exit with the expansion of ionization region. Furthermore, the electron-wall collision frequency and ionization rate also increase, the discharge current decreases and the specific impulse of the Hall thruster is slightly enhanced.

Effect of growth pressure on the morphology evolution and doping characteristics in nonpolar a-plane GaN

NASA Astrophysics Data System (ADS)

Song, Keun Man; Kim, Jong Min; Kang, Bong Kyun; Shin, Chan Soo; Ko, Chul Gi; Kong, Bo Hyun; Cho, Hyung Koun; Yoon, Dae Ho; Kim, Hogyoung; Hwang, Sung Min

2012-02-01

Nonpolar a-plane GaN layers grown on r-plane sapphire substrates were examined by using a two-step growth process. The higher initial growth pressure for the nucleation layer resulted in the improved crystalline quality with lower density of both threading dislocations and basal stacking faults. This was attributed to the higher degree of initial roughening and recovery time via a growth mode transition from three-dimensional (3D) to quasi two-dimensional (2D) lateral growth. Using Hall-effect measurements, the overgrown Si doped GaN layers grown with higher initial growth pressure were found to have higher mobility. The scattering mechanism due to the dislocations was dominant especially at low temperature (<200 K) for the lower initial growth pressure, which was insignificant for the higher initial growth pressure. The temperature-dependent Hall-effect measurements for the Mg doped GaN with a higher initial growth pressure yielded the activation energy and the acceptor concentration to be 128 meV and 1.2 × 1019 cm-3, respectively, corresponding to about 3.6% of activation at room temperature. Two-step growth scheme with a higher initial growth pressure is suggested as a potential method to improve the performance of nonpolar a-plane GaN based devices.

Magnetotransport of Monolayer Graphene with Inert Gas Adsorption in the Quantum Hall Regime

NASA Astrophysics Data System (ADS)

Fukuda, A.; Terasawa, D.; Fujimoto, A.; Kanai, Y.; Matsumoto, K.

2018-03-01

The surface of graphene is easily accessible from outside, and thus it is a suitable material to study the effects of molecular adsorption on the electric transport properties. We investigate the magnetotransport of inert-gas-adsorbed monolayer graphene at a temperature of 4.4 K under a magnetic field ranging from 0 to 7 T. We introduce 4He or Ar gas at low temperature to graphene kept inside a sample cell. The magnetoresistance change ΔRxx and Hall resistance change ΔRxy from the pristine graphene are measured as a function of gate voltage and magnetic field for one layer of adsorbates. ΔRxx and ΔRxy show oscillating patterns related to the constant filling factor lines in a Landau-fan diagram. Magnitudes of these quantities are relatively higher around a charge neutral point and may be mass-sensitive. These conditions could be optimized for development of a highly sensitive gas sensor.

Design and Characterization of a Three-Axis Hall Effect-Based Soft Skin Sensor

PubMed Central

Tomo, Tito Pradhono; Somlor, Sophon; Schmitz, Alexander; Jamone, Lorenzo; Huang, Weijie; Kristanto, Harris; Sugano, Shigeki

2016-01-01

This paper presents an easy means to produce a 3-axis Hall effect–based skin sensor for robotic applications. It uses an off-the-shelf chip and is physically small and provides digital output. Furthermore, the sensor has a soft exterior for safe interactions with the environment; in particular it uses soft silicone with about an 8 mm thickness. Tests were performed to evaluate the drift due to temperature changes, and a compensation using the integral temperature sensor was implemented. Furthermore, the hysteresis and the crosstalk between the 3-axis measurements were evaluated. The sensor is able to detect minimal forces of about 1 gf. The sensor was calibrated and results with total forces up to 1450 gf in the normal and tangential directions of the sensor are presented. The test revealed that the sensor is able to measure the different components of the force vector. PMID:27070604

Skew scattering dominated anomalous Hall effect in Co x (MgO)100-x granular thin films

NASA Astrophysics Data System (ADS)

Zhang, Qiang; Wen, Yan; Zhao, Yuelei; Li, Peng; He, Xin; Zhang, Junli; He, Yao; Peng, Yong; Yu, Ronghai; Zhang, Xixiang

2017-10-01

We investigated the mechanism(s) of the anomalous Hall effect (AHE) in magnetic granular materials by fabricating 100 nm-thick thin films of Co x (MgO)100-x with a Co volume fraction of 34  ⩽  x  ⩽  100 using co-sputtering at room temperature. We measured the temperature dependence of longitudinal resistivity ({{ρ }xx} ) and anomalous Hall resistivity ({{ρ }AHE} ) from 5 K to 300 K in all samples. We found that when x decreases from 100 to 34, the values of {{ρ }xx} and {{ρ }AHE} respectively increased by about four and three orders in magnitude. By linearly fitting the data, obtained at 5 K, of anomalous Hall coefficient ({{R}s} ) and of {{ρ }xx} to log({{R}s})˜ γ log({{ρ }xx}) , we found that our results perfectly fell on a straight line with a slope of γ = 0.97  ±  0.02. This fitting value of γ in {{R}s}\\propto ρ xxγ ~ clearly suggests that skew scattering dominated the AHE in this granular system. To explore the effect of the scattering on the AHE, we performed the same measurements on annealed samples. We found that although both {{ρ }xx} and {{ρ }AHE} significantly reduced after annealing, the correlation between them was almost the same, which was confirmed by the fitted value, γ   =  0.99  ±  0.03. These data strongly suggest that the AHE originates from the skew scattering in Co-MgO granular thin films no matter how strong the scattering of electrons by the interfaces and defects is. This observation may be of importance to the development of spintronic devices based on MgO.

Electrical transport properties in Fe-Cr nanocluster-assembled granular films

NASA Astrophysics Data System (ADS)

Wang, Xiong-Zhi; Wang, Lai-Sen; Zhang, Qin-Fu; Liu, Xiang; Xie, Jia; Su, A.-Mei; Zheng, Hong-Fei; Peng, Dong-Liang

2017-09-01

The Fe100-xCrx nanocluster-assembled granular films with Cr atomic fraction (x) ranging from 0 to 100 were fabricated by using a plasma-gas-condensation cluster deposition system. The TEM characterization revealed that the uniform Fe clusters were coated with a Cr layer to form a Fe-Cr core-shell structure. Then, the as-prepared Fe100-xCrx nanoclusters were randomly assembled into a granular film in vacuum environments with increasing the deposition time. Because of the competition between interfacial resistance and shunting effect of Cr layer, the room temperature resistivity of the Fe100-xCrx nanocluster-assembled granular films first increased and then decreased with increasing the Cr atomic fraction (x), and revealed a maximum of 2 × 104 μΩ cm at x = 26 at.%. The temperature-dependent longitudinal resistivity (ρxx), magnetoresistance (MR) effect and anomalous Hall effect (AHE) of these Fe100-xCrx nanocluster-assembled granular films were also studied systematically. As the x increased from 0 to 100, the ρxx of all samples firstly decreased and then increased with increasing the measuring temperature. The dependence of ρxx on temperature could be well addressed by a mechanism incorporated for the fluctuation-induced-tunneling (FIT) conduction process and temperature-dependent scattering effect. It was found that the anomalous Hall effect (AHE) had no legible scaling relation in Fe100-xCrx nanocluster-assembled granular films. However, after deducting the contribution of tunneling effect, the scaling relation was unambiguous. Additionally, the Fe100-xCrx nanocluster-assembled granular films revealed a small negative magnetoresistance (MR), which decreased with the increase of x. The detailed physical mechanism of the electrical transport properties in these Fe100-xCrx nanocluster-assembled granular films was also studied.

Synchronization of spin-transfer torque oscillators by spin pumping, inverse spin Hall, and spin Hall effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elyasi, Mehrdad; Bhatia, Charanjit S.; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg

2015-02-14

We have proposed a method to synchronize multiple spin-transfer torque oscillators based on spin pumping, inverse spin Hall, and spin Hall effects. The proposed oscillator system consists of a series of nano-magnets in junction with a normal metal with high spin-orbit coupling, and an accumulative feedback loop. We conduct simulations to demonstrate the effect of modulated charge currents in the normal metal due to spin pumping from each nano-magnet. We show that the interplay between the spin Hall effect and inverse spin Hall effect results in synchronization of the nano-magnets.

Strained layer relaxation effect on current crowding and efficiency improvement of GaN based LED

NASA Astrophysics Data System (ADS)

Aurongzeb, Deeder

2012-02-01

Efficiency droop effect of GaN based LED at high power and high temperature is addressed by several groups based on career delocalization and photon recycling effect(radiative recombination). We extend the previous droop models to optical loss parameters. We correlate stained layer relaxation at high temperature and high current density to carrier delocalization. We propose a third order model and show that Shockley-Hall-Read and Auger recombination effect is not enough to account for the efficiency loss. Several strained layer modification scheme is proposed based on the model.

Prediction of a magnetic Weyl semimetal without spin-orbit coupling and strong anomalous Hall effect in the Heusler compensated ferrimagnet Ti2MnAl

NASA Astrophysics Data System (ADS)

Shi, Wujun; Muechler, Lukas; Manna, Kaustuv; Zhang, Yang; Koepernik, Klaus; Car, Roberto; van den Brink, Jeroen; Felser, Claudia; Sun, Yan

2018-02-01

We predict a magnetic Weyl semimetal in the inverse Heusler Ti2MnAl , a compensated ferrimagnet with a vanishing net magnetic moment and a Curie temperature of over 650 K. Despite the vanishing net magnetic moment, we calculate a large intrinsic anomalous Hall effect (AHE) of about 300 S/cm. It derives from the Berry curvature distribution of the Weyl points, which are only 14 meV away from the Fermi level and isolated from trivial bands. Different from antiferromagnets Mn3X (X =Ge , Sn, Ga, Ir, Rh, and Pt), where the AHE originates from the noncollinear magnetic structure, the AHE in Ti2MnAl stems directly from the Weyl points and is topologically protected. The large anomalous Hall conductivity (AHC) together with a low charge carrier concentration should give rise to a large anomalous Hall angle. In contrast to the Co-based ferromagnetic Heusler compounds, the Weyl nodes in Ti2MnAl do not derive from nodal lines due to the lack of mirror symmetries in the inverse Heusler structure. Since the magnetic structure breaks spin-rotation symmetry, the Weyl nodes are stable without SOC. Moreover, because of the large separation between Weyl points of opposite topological charge, the Fermi arcs extent up to 75 % of the reciprocal lattice vectors in length. This makes Ti2MnAl an excellent candidate for the comprehensive study of magnetic Weyl semimetals. It is the first example of a material with Weyl points, large anomalous Hall effect, and angle despite a vanishing net magnetic moment.

Electronic Phenomena in Two-Dimensional Topological Insulators

NASA Astrophysics Data System (ADS)

Hart, Sean

In recent years, two-dimensional electron systems have played an integral role at the forefront of discoveries in condensed matter physics. These include the integer and fractional quantum Hall effects, massless electron physics in graphene, the quantum spin and quantum anomalous Hall effects, and many more. Investigation of these fascinating states of matter brings with it surprising new results, challenges us to understand new physical phenomena, and pushes us toward new technological capabilities. In this thesis, we describe a set of experiments aimed at elucidating the behavior of two such two-dimensional systems: the quantum Hall effect, and the quantum spin Hall effect. The first experiment examines electronic behavior at the edge of a two-dimensional electron system formed in a GaAs/AlGaAs heterostructure, under the application of a strong perpendicular magnetic field. When the ratio between the number of electrons and flux quanta in the system is tuned near certain integer or fractional values, the electrons in the system can form states which are respectively known as the integer and fractional quantum Hall effects. These states are insulators in the bulk, but carry gapless excitations at the edge. Remarkably, in certain fractional quantum Hall states, it was predicted that even as charge is carried downstream along an edge, heat can be carried upstream in a neutral edge channel. By placing quantum dots along a quantum Hall edge, we are able to locally monitor the edge temperature. Using a quantum point contact, we can locally heat the edge and use the quantum dot thermometers to detect heat carried both downstream and upstream. We find that heat can be carried upstream when the edge contains structure related to the nu = 2/3 fractional quantum Hall state. We further find that this fractional edge physics can even be present when the bulk is tuned to the nu = 1integer quantum Hall state. Our experiments also demonstrate that the nature of this fractional reconstruction can be tuned by modifying the sharpness of the confining potential at the edge. In the second set of experiments, we focus on an exciting new two-dimensional system known as a quantum spin Hall insulator. Realized in quantum well heterostructures formed by layers of HgTe and HgCdTe, this material belongs to a set of recently discovered topological insulators. Like the quantum Hall effect, the quantum spin Hall effect is characterized by an insulating bulk and conducting edge states. However, the quantum spin Hall effect occurs in the absence of an external magnetic field, and contains a pair of counter propagating edge states which are the time-reversed partners of one another. It was recently predicted that a Josephson junction based around one of these edge states could host a new variety of excitation called a Majorana fermion. Majorana fermions are predicted to have non-Abelian braiding statistics, a property which holds promise as a robust basis for quantum information processing. In our experiments, we place a section of quantum spin Hall insulator between two superconducting leads, to form a Josephson junction. By measuring Fraunhofer interference, we are able to study the spatial distribution of supercurrent in the junction. In the quantum spin Hall regime, this supercurrent becomes confined to the topological edge states. In addition to providing a microscopic picture of these states, our measurement scheme generally provides a way to investigate the edge structure of any topological insulator. In further experiments, we tune the chemical potential into the conduction band of the HgTe system, and investigate the behavior of Fraunhofer interference as a magnetic field is applied parallel to the plane of the quantum well. By theoretically analyzing the interference in a parallel field, we find that Cooper pairs in the material acquire a tunable momentum that grows with the magnetic field strength. This finite pairing momentum leads to the appearance of triplet pair correlations at certain locations within the junction, which we are able to control with the external magnetic field. Our measurements and analysis also provide a method to obtain information about the Fermi surface properties and spin-orbit coupling in two-dimensional materials.

Large anomalous Nernst and spin Nernst effects in the noncollinear antiferromagnets Mn3X (X =Sn ,Ge ,Ga )

NASA Astrophysics Data System (ADS)

Guo, Guang-Yu; Wang, Tzu-Cheng

2017-12-01

Noncollinear antiferromagnets have recently been attracting considerable interest partly due to recent surprising discoveries of the anomalous Hall effect (AHE) in them and partly because they have promising applications in antiferromagnetic spintronics. Here we study the anomalous Nernst effect (ANE), a phenomenon having the same origin as the AHE, and also the spin Nernst effect (SNE) as well as AHE and the spin Hall effect (SHE) in noncollinear antiferromagnetic Mn3X (X =Sn , Ge, Ga) within the Berry phase formalism based on ab initio relativistic band structure calculations. For comparison, we also calculate the anomalous Nernst conductivity (ANC) and anomalous Hall conductivity (AHC) of ferromagnetic iron as well as the spin Nernst conductivity (SNC) of platinum metal. Remarkably, the calculated ANC at room temperature (300 K) for all three alloys is huge, being 10-40 times larger than that of iron. Moreover, the calculated SNC for Mn3Sn and Mn3Ga is also larger, being about five times larger than that of platinum. This suggests that these antiferromagnets would be useful materials for thermoelectronic devices and spin caloritronic devices. The calculated ANC of Mn3Sn and iron are in reasonably good agreement with the very recent experiments. The calculated SNC of platinum also agrees with the very recent experiments in both sign and magnitude. The calculated thermoelectric and thermomagnetic properties are analyzed in terms of the band structures as well as the energy-dependent AHC, ANC, SNC, and spin Hall conductivity via the Mott relations.

Certain physical properties of cobalt and nickel borides

NASA Technical Reports Server (NTRS)

Kostetskiy, I. I.; Lvov, S. N.

1981-01-01

The temperature dependence of the electrical resistivity, the thermal conductivity, and the thermal emf of cobalt and nickel borides were studied. In the case of the nickel borides the magnetic susceptibility and the Hall coefficient were determined at room temperature. The results are discussed with allowance for the current carrier concentration, the effect of various mechanisms of current-carrier scattering and the location of the Fermi level in relation to the 3d band.

ac-driven vortices and the Hall effect in a superconductor with a tilted washboard pinning potential

NASA Astrophysics Data System (ADS)

Shklovskij, Valerij A.; Dobrovolskiy, Oleksandr V.

2008-09-01

The Langevin equation for a two-dimensional (2D) nonlinear guided vortex motion in a tilted cosine pinning potential in the presence of an ac is exactly solved in terms of a matrix continued fraction at arbitrary value of the Hall effect. The influence of an ac of arbitrary amplitude and frequency on the dc and ac magnetoresistivity tensors is analyzed. The ac density and frequency dependence of the overall shape and the number and position of the Shapiro steps on the anisotropic current-voltage characteristics are considered. The influence of a subcritical or overcritical dc on the time-dependent stationary ac longitudinal and transverse resistive vortex responses (on the frequency of an ac drive Ω ) in terms of the nonlinear impedance tensor Ẑ and the nonlinear ac response at Ω harmonics are studied. Analytical formulas for 2D temperature-dependent linear impedance tensor ẐL in the presence of a dc which depend on the angle α between the current-density vector and the guiding direction of the washboard planar pinning potential are derived and analyzed. Influence of α anisotropy and the Hall effect on the nonlinear power absorption by vortices is discussed.

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

NASA Astrophysics Data System (ADS)

Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Suda, Jun

2017-03-01

Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm-3 (lightly doped) to 3.8 × 1019 cm-3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of p-GaN was 4 × 106 cm-2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 130 to 450 K. For the lightly doped p-GaN, the acceptor concentration of 7.0 × 1016 cm-3 and the donor concentration of 3.2 × 1016 cm-3 were obtained, where the compensation ratio was 46%. We also obtained the depth of the Mg acceptor level to be 220 meV. The hole mobilities of 86, 31, 14 cm2 V-1 s-1 at 200, 300, 400 K, respectively, were observed in the lightly doped p-GaN.

Atomically engineered epitaxial anatase TiO2 metal-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; Bell, Christopher; Hwang, Harold Y.

2018-03-01

Anatase TiO2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO2 and LaAlO3 (001), which arises for LaO-terminated LaAlO3, while the AlO2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a high field-effect mobility μ FE of 3.14 cm2 (V s)-1 approaching 98% of the corresponding Hall mobility μ Hall . Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ˜4 V.

Evidence of Collisionless Shocks in a Hall Thruster Plume

DTIC Science & Technology

2003-04-25

Triple Langmuir probes and emissive probes are used to measure the electron number density, electron temperature, and plasma potential downstream of a low-power Hall thruster . The results show a high density plasma core with elevated electron temperature and plasma potential along the thruster centerline. These properties are believed to be due to collisionless shocks formed as a result of the ion/ion acoustic instability. A simple model is presented that shows the existence of a collisionless shock to be consistent with the observed phenomena.

High-resolution scanning Hall probe microscopy

NASA Astrophysics Data System (ADS)

Hallen, Hans D.; Hess, H. F.; Chang, A. M.; Pfeiffer, Loren N.; West, Kenneth W.; Mitzi, David B.

1993-06-01

A high resolution scanning Hall probe microscope is used to spatially resolve vortices in high temperature superconducting Bi2Sr2CaCu2O8+(delta) crystals. We observe a partially ordered vortex lattice at several different applied magnetic fields and temperatures. At higher temperatures, a limited amount of vortex re-arrangement is observed, but most vortices remain fixed for periods long compared to the imaging time of several hours even at temperatures as high as 75 degree(s)K (the superconducting transition temperature for these crystals is approximately 84 degree(s)K). A measure of these local magnetic penetration depth can be obtained from a fit to the surface field of several neighboring vortices, and has been measured as a function of temperature. In particular, we have measured the zero temperature penetration depth and found it to be 275 +/- 40 nm.

Anomalous thermoelectric phenomena in lattice models of multi-Weyl semimetals

NASA Astrophysics Data System (ADS)

Gorbar, E. V.; Miransky, V. A.; Shovkovy, I. A.; Sukhachov, P. O.

2017-10-01

The thermoelectric transport coefficients are calculated in a generic lattice model of multi-Weyl semimetals with a broken time-reversal symmetry by using the Kubo's linear response theory. The contributions connected with the Berry curvature-induced electromagnetic orbital and heat magnetizations are systematically taken into account. It is shown that the thermoelectric transport is profoundly affected by the nontrivial topology of multi-Weyl semimetals. In particular, the calculation reveals a number of thermal coefficients of the topological origin which describe the anomalous Nernst and thermal Hall effects in the absence of background magnetic fields. Similarly to the anomalous Hall effect, all anomalous thermoelectric coefficients are proportional to the integer topological charge of the Weyl nodes. The dependence of the thermoelectric coefficients on the chemical potential and temperature is also studied.

Towards Thermal Reading of Magnetic States in Hall Crosses

NASA Astrophysics Data System (ADS)

Xu, Y.; Petit-Watelot, S.; Polewczyk, V.; Parent, G.; Montaigne, F.; Wegrowe, J.-E.; Mangin, S.; Lacroix, D.; Hehn, M.; Lacour, D.

2018-03-01

The 3 ω method is a standard way to measure the thermal conductivity of thin films. In this study, we apply the method to read the magnetic state of a perpendicularly magnetized CoTb ferrimagnetic Hall cross using a thermal excitation. In order to generate the thermal excitation, an oscillating current at an ω frequency is applied to the Hall cross using different geometries. The magnetic signals oscillating at ω , 2 ω , and 3 ω are probed using a lock-in technique. From the analysis of the power dependence, we can attribute the 3 ω response to the temperature oscillation and the 2 ω to the temperature-gradient oscillation. Finally, the frequency dependence of the magnetic signals can be understood by considering the heat diffusion in a two-dimensional model.

Topological Hall Effect in Skyrmions: A Nonequilibrium Coherent Transport Approach

NASA Astrophysics Data System (ADS)

Yin, Gen; Zang, Jiadong; Lake, Roger

2014-03-01

Skyrmion is a topological spin texture recently observed in many materials with broken inversion symmetry. In experiments, one effective method to detect the skyrmion crystal phase is the topological Hall measurement. At adiabatic approximation, previous theoretical studies show that the Hall signal is provided by an emergent magnetic field, which explains the topological Hall effect in the classical level. Motivated by the potential device application of skyrmions as digital bits, it is important to understand the topological Hall effect in the mesoscopic level, where the electron coherence should be considered. In this talk, we will discuss the quantum aspects of the topological Hall effect on a tight binding setup solved by nonequilibrium Green's function (NEGF). The charge distribution, Hall potential distribution, thermal broadening effect and the Hall resistivity are investigated in detail. The relation between the Hall resistance and the DM interaction is investigated. Driven by the spin transferred torque (SST), Skyrmion dynamics is previously studied within the adiabatic approximation. At the quantum transport level, this talk will also discuss the non-adiabatic effect in the skyrmion motion with the presence of the topological Hall effect. This material is based upon work supported by the National Science Foundation under Grant Nos. NSF 1128304 and NSF 1124733. It was also supported in part by FAME, one of six centers of STARnet, an SRC program sponsored by MARCO and DARPA.

Intrinsic Dawn-Dusk Asymmetry of Magnetotail Thin Current Sheet

NASA Astrophysics Data System (ADS)

Lu, S.; Pritchett, P. L.; Angelopoulos, V.; Artemyev, A.

2017-12-01

Magnetic reconnection and its related phenomena (flux ropes, dipolarization fronts, bursty bulk flows, particle injections, etc.) occur more frequently on the duskside in the Earth's magnetotail. Magnetohydrodynamic simulations attributed the asymmetry to the nonuniform ionospheric conductance through global scale magnetosphere-ionosphere interaction. Hybrid simulations, on the other hand, found an alternative responsible mechanism: the Hall effect in the magnetotail thin current sheet, but left an open question: What is the physical origin of the asymmetric Hall effect? The answer could be the temperature difference on the two sides and/or the dawn-dusk transportation of magnetic flux and plasmas. In this work, we use 3-D particle-in-cell simulations to further explore the magnetotail dawn-dusk asymmetry. The magnetotail equilibrium contains a dipole magnetic field and a current sheet region. The simulation is driven by a symmetric and localized (in the y direction) high-latitude electric field, under which the current sheet thins with a decrease of Bz. During the same time, a dawn-dusk asymmetry is formed intrinsically in the thin current sheet, with a smaller Bz, a stronger Hall effect (indicated by the Hall electric field Ez), and a stronger cross-tail current jy on the duskside. The deep origin of the asymmetry is also shown to be dominated by the dawnward E×B drift of magnetic flux and plasmas. A direct consequence of this intrinsic dawn-dusk asymmetry is that it favors magnetotail reconnection and related phenomena to preferentially occur on the duskside.

ION ACOUSTIC TURBULENCE, ANOMALOUS TRANSPORT, AND SYSTEM DYNAMICS IN HALL EFFECT THRUSTERS

DTIC Science & Technology

2017-06-30

17394 4 / 13 HALL EFFECT THRUSTERS Hall Effect Thrusters (HET): Traditionally Modeled in R-Z Named for Hall Current in θ Uses Quasi -1D Electron Fluid...HET): Traditionally Modeled in R-Z Named for Hall Current in θ Uses Quasi -1D Electron Fluid Solve Ohm’s Law→ No e−-momentum Zθ Unrolled to YZ...Current in θ Uses Quasi -1D Electron Fluid Solve Ohm’s Law→ No e−-momentum Zθ Unrolled to YZ Electron ExB Drift Unmagnetized Ions Results in Hall Current

Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation

NASA Astrophysics Data System (ADS)

Qamar, Afzaal; Dao, Dzung Viet; Phan, Hoang-Phuong; Dinh, Toan; Dimitrijev, Sima

2016-08-01

Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P 12 = ( 5.3 ± 0.4 ) × 10 - 11 Pa - 1 , P 11 = ( - 2.6 ± 0.6 ) × 10 - 11 Pa - 1 , and P 44 = ( 11.42 ± 0.6 ) × 10 - 11 Pa - 1 . Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity.

Temperature dependence of spin-orbit torques in W/CoFeB bilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skowroński, Witold, E-mail: skowron@agh.edu.pl; Cecot, Monika; Kanak, Jarosław

We report on the temperature variation of spin-orbit torques in perpendicularly magnetized W/CoFeB bilayers. Harmonic Hall voltage measurements in perpendicularly magnetized CoFeB reveal increased longitudinal and transverse effective magnetic field components at low temperatures. The damping-like spin-orbit torque reaches an efficiency of 0.55 at 19 K. Scanning transmission electron microscopy and X-ray reflectivity measurements indicate that considerable interface mixing between W and CoFeB may be responsible for strong spin-orbit interactions.

Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region

NASA Astrophysics Data System (ADS)

Ji, Yang; Miao, J.; Zhu, Y. M.; Meng, K. K.; Xu, X. G.; Chen, J. K.; Wu, Y.; Jiang, Y.

2018-06-01

We demonstrate the negative spin Hall magnetoresistance (SMR) observed in antiferromagnetic Cr2O3/Ta bilayers at low temperature. The SMR signals are changed from the positive to negative magnitude when monotonously reducing the temperature from 300 K to 50 K. The positive and negative SMR signals are expected to be associated with the two different ways for injection of the spin current, into the boundary ferromagnetic region and the bulk antiferromagnetic region of α-Cr2O3 (0001), respectively. The slopes of the abnormal Hall curves exhibit the same sign with the SMR signal. From the SMR ratio under 3 T, the spin mixing conductance at the Cr2O3/Ta interface is estimated to be 1.12 × 1014 Ω-1.m-2, which is comparable to the one observed in the Y3Fe5O12(YIG)/Pt structure and our early results of the Cr2O3/W structure.

Full wafer size investigation of N+ and P+ co-implanted layers in 4H-SiC

NASA Astrophysics Data System (ADS)

Blanqué, S.; Lyonnet, J.; Pérez, R.; Terziyska, P.; Contreras, S.; Godignon, P.; Mestres, N.; Pascual, J.; Camassel, J.

2005-03-01

We report a full wafer size investigation of the homogeneity of electrical properties in the case of co-implanted nitrogen and phosphorus ions in 4H-SiC semi-insulating wafers. To match standard industrial requirements, implantation was done at room temperature. To achieve a detailed electrical knowledge, we worked on a 35 mm wafer on which 77 different reticules have been processed. Every reticule includes one Hall cross, one Van der Pauw test structure and different TLM patterns. Hall measurements have been made on all 77 different reticules, using an Accent HL5500 Hall System® from BioRad fitted with an home-made support to collect data from room temperature down to about 150 K. At room temperature, we find that the sheet carrier concentration is only 1/4 of the total implanted dose while the average mobility is 80.6 cm2/Vs. The standard deviation is, typically, 1.5 cm2/Vs.

Emergence of nontrivial magnetic excitations in a spin-liquid state of kagomé volborthite

PubMed Central

Watanabe, Daiki; Sugii, Kaori; Shimozawa, Masaaki; Suzuki, Yoshitaka; Yajima, Takeshi; Ishikawa, Hajime; Hiroi, Zenji; Shibauchi, Takasada; Matsuda, Yuji; Yamashita, Minoru

2016-01-01

When quantum fluctuations destroy underlying long-range ordered states, novel quantum states emerge. Spin-liquid (SL) states of frustrated quantum antiferromagnets, in which highly correlated spins fluctuate down to very low temperatures, are prominent examples of such quantum states. SL states often exhibit exotic physical properties, but the precise nature of the elementary excitations behind such phenomena remains entirely elusive. Here, we use thermal Hall measurements that can capture the unexplored property of the elementary excitations in SL states, and report the observation of anomalous excitations that may unveil the unique features of the SL state. Our principal finding is a negative thermal Hall conductivity κxy which the charge-neutral spin excitations in a gapless SL state of the 2D kagomé insulator volborthite Cu3V2O7(OH)2⋅2H2O exhibit, in much the same way in which charged electrons show the conventional electric Hall effect. We find that κxy is absent in the high-temperature paramagnetic state and develops upon entering the SL state in accordance with the growth of the short-range spin correlations, demonstrating that κxy is a key signature of the elementary excitation formed in the SL state. These results suggest the emergence of nontrivial elementary excitations in the gapless SL state which feel the presence of fictitious magnetic flux, whose effective Lorentz force is found to be less than 1/100 of the force experienced by free electrons. PMID:27439874

Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

NASA Astrophysics Data System (ADS)

Kirihara, Akihiro; Ishida, Masahiko; Yuge, Ryota; Ihara, Kazuki; Iwasaki, Yuma; Sawada, Ryohto; Someya, Hiroko; Iguchi, Ryo; Uchida, Ken-ichi; Saitoh, Eiji; Yorozu, Shinichi

2018-04-01

Thermoelectric converters based on the spin Seebeck effect (SSE) have attracted great attention due to their potential to offer novel applications such as energy harvesting and heat-flow sensing. For converting a SSE-induced spin current into an electric current, a transition metal film such as Pt, which exhibits large inverse spin-Hall effect (ISHE), has been typically used. In this work, we show an all-oxide SSE device using ruthenium oxide (RuO2) as a conductive film. We found that both the sign and magnitude of the SSE-induced ISHE voltage V appearing in the RuO2 film changes depending on the post annealing temperature, and that the magnitude can become larger than that of a standard SSE device using Pt. The similar sign change was also observed in Hall-resistance measurements of the RuO2 films. X-ray absorption fine structure (XAFS) spectra of as-deposited and annealed RuO2 revealed that the annealing process substantially improved the long-range crystalline order in RuO2. This suggests that change in the crystalline order may modify the dominant ISHE mechanism or electronic states in RuO2, leading to the sign reversal of V as well as the Hall coefficient. Our result demonstrates that RuO2 is an interesting material not only as a practical ISHE film but also as a testbed to study physics of spin-to-charge converters that depend on their crystalline order.

Electrical Characterization of Thin Film Cadmium Telluride Electrodeposited from Tri-N Telluride

NASA Astrophysics Data System (ADS)

von Windheim, Jesko A.

The electrical transport properties of CdTe electrodeposited from tri-n-butylphosphine telluride have been studied by resistivity and Hall effect measurements. Methods have been developed to reproducibly remove large area samples from their conducting substrates, and these samples were prepared for temperature dependent Hall measurements and resistivity measurements. Apparatus was designed and built to routinely measure Hall voltages as low as 250 muV for source impedances up to 10 ^{12} Omega. The central aspect of the measurement system was a low cost, differential electrometer amplifier designed around the AD549L monolithic electrometer operational amplifier. Temperature control was achieved via a Eurotherm 808 temperature controller, and a cooled stream of nitrogen gas. With this system, temperature could be maintained within +/- 0.5^circC at set points between -40^circC and +40^circC. Data collection, temperature ramping, and power to the magnet were all computer controlled, and resistivity measurements were fully automated. As-annealed electrodeposited CdTe was found to be consistently p-type, with resistivity values typically 10^6- 10^{7 } Omega-cm. Various donor and acceptor dopants have been incorporated into polycrystalline CdTe films by three methods: electrochemical codeposition, electromigration and vapour techniques. The dopants were Cd, Te, Cu, Ag, In, and O_2. The activity of the dopant was dependent on the method that was used for incorporation. Oxygen was found to only have a significant effect when it was incorporated in situ, during deposition. For Cd and Te, on the other hand, little effect was seen when their concentration was varied in situ. However, hole concentration increased substantially when Te was incorporated by diffusion, and a p to n conversion was observed when Cd was incorporated by diffusion. The carrier concentration of p-type CdTe could be systematically increased by increasing the current density for the electromigration of copper. The decreasing carrier concentration was accompanied by a decrease in resistivity and a decrease in mobility. The effect of dopant density on the resistivity of the polycrystalline cadmium telluride films, deposited from tri-n-butylphosphine telluride, can consistently be described by a grain boundary model. In this model charging of grain boundary states results in a barrier and can affect the carrier density. According to the model, dopants accumulated at grain boundaries do not generate carriers and do not affect the density of interface states.

Faster Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Sullender, Craig C.; Johnson, Daniel D.; Walker, Daniel D.

1993-01-01

Current-measuring circuit operates on Hall-effect-sensing and magnetic-field-nulling principles similar to those described in article, "Nulling Hall-Effect Current-Measuring Circuit" (LEW-15023), but simpler and responds faster. Designed without feedback loop, and analog pulse-width-modulated output indicates measured current. Circuit measures current at frequency higher than bandwidth of its Hall-effect sensor.

Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration

NASA Astrophysics Data System (ADS)

Qamar, Afzaal; Dao, Dzung Viet; Dinh, Toan; Iacopi, Alan; Walker, Glenn; Phan, Hoang-Phuong; Hold, Leonie; Dimitrijev, Sima

2017-04-01

This article reports the results on the piezo-Hall effect in single crystal n-type 3C-SiC(100) having a low carrier concentration. The effect of the crystallographic orientation on the piezo-Hall effect has been investigated by applying stress to the Hall devices fabricated in different crystallographic directions. Single crystal n-type 3C-SiC(100) and 3C-SiC(111) were grown by low pressure chemical vapor deposition at 1250 °C. Fundamental piezo-Hall coefficients were obtained using the piezo-Hall effect measurements as P11 = (-29 ± 1.3) × 10-11 Pa-1, P12 = (11.06 ± 0.5)× 10-11 Pa-1, and P44 = (-3.4 ± 0.7) × 10-11 Pa-1. It has been observed that the piezo-Hall coefficients of n-type 3C-SiC(100) show a completely different behavior as compared to that of p-type 3C-SiC.

Phase transitions, magnetotransport and magnetocaloric effects in a new family of quaternary Ni-Mn-In-Z Heusler alloys.

PubMed

Kazakov, Alexander; Prudnikov, Valerii; Granovsky, Alexander; Perov, Nikolai; Dubenko, Igor; Pathak, Arjun Kumar; Samanta, Tapas; Stadler, Shane; Ali, Naushad; Zhukov, Arcady; Ilyin, Maxim; Gonzalez, Julian

2012-09-01

The magnetic, magnetotransport, and magnetocaloric properties near compound phase transitions in Ni50Mn35In14Z (Z = In, Ge, Al), and Ni48Co2Mn35In15 Heusler alloys have been studied using VSM and SQUID magnetometers (at magnetic fields (H) up to 5 T), four-probe method (at H = 0.005-1.5 T), and an adiabatic magnetocalorimeter (for H changes up to deltaH = 1.8 T), respectively. The martensitic transformation (MT) is accompanied by large magnetoresistance (up to 70%), a significant change in resistivity (up to 200%), and a sign reversal of the ordinary Hall effect coefficient, all related to a strong change in the electronic spectrum at the MT. The field dependences of the Hall resistance are complex in the vicinity of the MT, indicating a change in the relative concentrations of the austenite and martensite phases at strong fields. Negative and positive changes in adiabatic temperatures of about -2 K and +2 K have been observed in the vicinity of MT and Curie temperatures, respectively, for deltaH = 1.8 T.

Performance and Thermal Characterization of the NASA-300MS 20 kW Hall Effect Thruster

NASA Technical Reports Server (NTRS)

Kamhawi, Hani; Huang, Wensheng; Haag, Thomas; Shastry, Rohit; Soulas, George; Smith, Timothy; Mikellides, Ioannis; Hofer, Richard

2013-01-01

NASA's Space Technology Mission Directorate is sponsoring the development of a high fidelity 15 kW-class long-life high performance Hall thruster for candidate NASA technology demonstration missions. An essential element of the development process is demonstration that incorporation of magnetic shielding on a 20 kW-class Hall thruster will yield significant improvements in the throughput capability of the thruster without any significant reduction in thruster performance. As such, NASA Glenn Research Center and the Jet Propulsion Laboratory collaborated on modifying the NASA-300M 20 kW Hall thruster to improve its propellant throughput capability. JPL and NASA Glenn researchers performed plasma numerical simulations with JPL's Hall2De and a commercially available magnetic modeling code that indicated significant enhancement in the throughput capability of the NASA-300M can be attained by modifying the thruster's magnetic circuit. This led to modifying the NASA-300M magnetic topology to a magnetically shielded topology. This paper presents performance evaluation results of the two NASA-300M magnetically shielded thruster configurations, designated 300MS and 300MS-2. The 300MS and 300MS-2 were operated at power levels between 2.5 and 20 kW at discharge voltages between 200 and 700 V. Discharge channel deposition from back-sputtered facility wall flux, and plasma potential and electron temperature measurements made on the inner and outer discharge channel surfaces confirmed that magnetic shielding was achieved. Peak total thrust efficiency of 64% and total specific impulse of 3,050 sec were demonstrated with the 300MS-2 at 20 kW. Thermal characterization results indicate that the boron nitride discharge chamber walls temperatures are approximately 100 C lower for the 300MS when compared to the NASA- 300M at the same thruster operating discharge power.

Scanning hall probe microscopy (SHPM) using quartz crystal AFM feedback.

PubMed

Dede, M; Urkmen, K; Girişen, O; Atabak, M; Oral, A; Farrer, I; Ritchie, D

2008-02-01

Scanning Hall Probe Microscopy (SHPM) is a quantitative and non-invasive technique for imaging localized surface magnetic field fluctuations such as ferromagnetic domains with high spatial and magnetic field resolution of approximately 50 nm and 7 mG/Hz(1/2) at room temperature. In the SHPM technique, scanning tunneling microscope (STM) or atomic force microscope (AFM) feedback is used to keep the Hall sensor in close proximity of the sample surface. However, STM tracking SHPM requires conductive samples; therefore the insulating substrates have to be coated with a thin layer of gold. This constraint can be eliminated with the AFM feedback using sophisticated Hall probes that are integrated with AFM cantilevers. However it is very difficult to micro fabricate these sensors. In this work, we have eliminated the difficulty in the cantilever-Hall probe integration process, just by gluing a Hall Probe chip to a quartz crystal tuning fork force sensor. The Hall sensor chip is simply glued at the end of a 32.768 kHz or 100 kHz Quartz crystal, which is used as force sensor. An LT-SHPM system is used to scan the samples. The sensor assembly is dithered at the resonance frequency using a digital Phase Locked Loop circuit and frequency shifts are used for AFM tracking. SHPM electronics is modified to detect AFM topography and the frequency shift, along with the magnetic field image. Magnetic domains and topography of an Iron Garnet thin film crystal, NdFeB demagnetised magnet and hard disk samples are presented at room temperature. The performance is found to be comparable with the SHPM using STM feedback.

Destruction of the Fractional Quantum Hall Effect by Disorder

DOE R&D Accomplishments Database

Laughlin, R. B.

1985-07-01

It is suggested that Hall steps in the fractional quantum Hall effect are physically similar to those in the ordinary quantum Hall effect. This proposition leads to a simple scaling diagram containing a new type of fixed point, which is identified with the destruction of the fractional states by disorder. 15 refs., 3 figs.

Micro-Hall magnetometry on a Co-organic chain compound

NASA Astrophysics Data System (ADS)

Rolland, L.; Simonet, V.; Wernsdorfer, W.; Bogani, L.; Sessoli, R.

2004-05-01

The static and dynamical properties of Co-organic chains, with strong magnetic anisotropy, are studied by micro-Hall magnetometry. The low-temperature hysteresis cycles are discussed with respect to the helical structure of the chains. Thermally activated relaxation of the magnetization is observed, compatible with the Glauber model for a 1D Ising system.

Thermally driven anomalous Hall effect transitions in FeRh

NASA Astrophysics Data System (ADS)

Popescu, Adrian; Rodriguez-Lopez, Pablo; Haney, Paul M.; Woods, Lilia M.

2018-04-01

Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here, we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall, and anomalous Nernst response properties of the FeRh metallic alloy which undergoes a thermally driven antiferromagnetic-to-ferromagnetic phase transition. We show that the energy band structures and underlying Berry curvatures have important signatures in the various Hall effects. Specifically, the suppression of the anomalous Hall and Nernst effects in the antiferromagnetic state and a sign change in the spin Hall conductivity across the transition are found. It is suggested that the FeRh can be used as a spin current detector capable of differentiating the spin Hall effect from other anomalous transverse effects. The implications of this material and its thermally driven phases as a spin current detection scheme are also discussed.

Magnetic Proximity Effect in a Transferred Topological Insulator Thin Film on a Magnetic Insulator

NASA Astrophysics Data System (ADS)

Che, Xiaoyu; Murata, Koichi; Pan, Lei; He, Qinglin; Yin, Gen; Fan, Yabin; Bi, Lei; Wang, Kang Lung

Exotic physical phenomena such as the quantum anomalous Hall effect (QAHE) arise by breaking the time-reversal symmetry (TRS) in topological insulators. However, substantial efforts have been made in improving the temperature for realizing the QAHE via magnetically doping, while the proximity coupling is another approach to develop the magnetic order without the introduction of additional carriers or the presence of local Fermi level fluctuation. Here we demonstrate the experimental signature of magnetic proximity effect in a molecular beam epitaxy-grown TI thin film of Bi2Se3 transferred to a magnetic substrate of yttrium iron garnet using a wet transfer technique. Comparing to the TI/GaAs control sample, the magnetic order is manifested by the anomalous Hall effect in magneto-transport characterization. Furthermore, due to TRS breaking by the proximity effect we observed a constituent weak localization component accompanied with the weak antilocalization behavior. The present work takes a step further toward realizing QAHE at higher temperature and opens up a new path in TI device designs for applications. We acknowledge the support from the ARO program under contract 15-1-10561, the SHINES Center under Award # S000686, NSF DMR-1350122, and the FAME Center, one of six centers of STARnet, sponsored by MARCO and DARPA.

Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.

DOE PAGES

Oveshnikov, L. N.; Kulbachinskii, V. A.; Davydov, A. B.; ...

2015-11-24

In this study, the anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gatecontrol of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHEmore » in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured.« less

Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure

PubMed Central

Oveshnikov, L. N.; Kulbachinskii, V. A.; Davydov, A. B.; Aronzon, B. A.; Rozhansky, I. V.; Averkiev, N. S.; Kugel, K. I.; Tripathi, V.

2015-01-01

The anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gate-control of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured. PMID:26596472

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mun, Eundeok; Bud'ko, Sergey L.; Canfield, Paul C.

We present the magnetic field dependencies of transport properties for RPtBi ( R = Gd, Dy, Tm, and Lu) half-Heusler compounds. Temperature- and field-dependent resistivity measurements of high-quality RPtBi single crystals reveal an unusually large, nonsaturating magnetoresistance (MR) up to 300 K under a moderate magnetic field of H = 140 kOe. At 300 K, the large MR effect decreases as the rare earth is traversed from Gd to Lu and the magnetic field dependence of MR shows a deviation from the conventional H2 behavior. The Hall coefficient ( RH) for R = Gd indicates a sign change around 120more » K, whereas RH curves for R = Dy, Tm, and Lu remain positive for all measured temperatures. At 300 K, the Hall resistivity reveals a deviation from the linear field dependence for all compounds. Thermoelectric power measurements on this family show strong temperature and magnetic field dependencies which are consistent with resistivity measurements. A highly enhanced thermoelectric power under applied magnetic field is observed as high as ~100 μV/K at 140 kOe. Furthermore, analysis of the transport data in this series reveals that the rare-earth-based half-Heusler compounds provide opportunities to tune MR effect through lanthanide contraction and to elucidate the mechanism of nontrivial MR.« less

Resonant spin Hall effect in two dimensional electron gas

NASA Astrophysics Data System (ADS)

Shen, Shun-Qing

2005-03-01

Remarkable phenomena have been observed in 2DEG over last two decades, most notably, the discovery of integer and fractional quantum Hall effect. The study of spin transport provides a good opportunity to explore spin physics in two-dimensional electron gas (2DEG) with spin-orbit coupling and other interaction. It is already known that the spin-orbit coupling leads to a zero-field spin splitting, and competes with the Zeeman spin splitting if the system is subjected to a magnetic field perpendicular to the plane of 2DEG. The result can be detected as beating of the Shubnikov-de Haas oscillation. Very recently the speaker and his collaborators studied transport properties of a two-dimensional electron system with Rashba spin-orbit coupling in a perpendicular magnetic field. The spin-orbit coupling competes with the Zeeman splitting to generate additional degeneracies between different Landau levels at certain magnetic fields. It is predicted theoretically that this degeneracy, if occurring at the Fermi level, gives rise to a resonant spin Hall conductance, whose height is divergent as 1/T and whose weight is divergent as -lnT at low temperatures. The charge Hall conductance changes by 2e^2/h instead of e^2/h as the magnetic field changes through the resonant point. The speaker will address the resonance condition, symmetries in the spin-orbit coupling, the singularity of magnetic susceptibility, nonlinear electric field effect, the edge effect and the disorder effect due to impurities. This work was supported by the Research Grants Council of Hong Kong under Grant No.: HKU 7088/01P. *S. Q. Shen, M. Ma, X. C. Xie, and F. C. Zhang, Phys. Rev. Lett. 92, 256603 (2004) *S. Q. Shen, Y. J. Bao, M. Ma, X. C. Xie, and F. C. Zhang, cond-mat/0410169

In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Di; Department of Optical Science and Engineering, Key Laboratory of Micro and Nano Photonic Structures; Yu, Guoqiang, E-mail: guoqiangyu@ucla.edu

2016-05-23

We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co{sub 40}Fe{sub 40}B{sub 20} (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer,more » i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.« less

MAGNETAR OUTBURSTS FROM AVALANCHES OF HALL WAVES AND CRUSTAL FAILURES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xinyu; Levin, Yuri; Beloborodov, Andrei M.

2016-12-20

We explore the interaction between Hall waves and mechanical failures inside a magnetar crust, using detailed one-dimensional models that consider temperature-sensitive plastic flow, heat transport, and cooling by neutrino emission, as well as the coupling of the crustal motion to the magnetosphere. We find that the dynamics is enriched and accelerated by the fast, short-wavelength Hall waves that are emitted by each failure. The waves propagate and cause failures elsewhere, triggering avalanches. We argue that these avalanches are the likely sources of outbursts in transient magnetars.

Impact of finite temperatures on the transport properties of Gd from first principles

NASA Astrophysics Data System (ADS)

Chadova, K.; Mankovsky, S.; Minár, J.; Ebert, H.

2017-03-01

Finite-temperature effects have a pronounced impact on the transport properties of solids. In magnetic systems, besides the scattering of conduction electrons by impurities and phonons, an additional scattering source coming from the magnetic degrees of freedom must be taken into account. A first-principle scheme which treats all these scattering effects on equal footing was recently suggested within the framework of the multiple scattering formalism. Employing the alloy analogy model treated by means of the CPA, thermal lattice vibrations and spin fluctuations are effectively taken into account. In the present work the temperature dependence of the longitudinal resistivity and the anomalous Hall effect in the strongly correlated metal Gd is considered. The comparison with experiments demonstrates that the proposed numerical scheme does provide an adequate description of the electronic transport at finite temperatures.

Note: Fiber optic transport probe for Hall measurements under light and magnetic field at low temperatures: Case study of a two dimensional electron gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhadauria, P. P. S.; Gupta, Anurag; Kumar, Pramod

2015-05-15

A fiber optic based probe is designed and developed for electrical transport measurements in presence of quasi-monochromatic (360–800 nm) light, varying temperature (T = 1.8–300 K), and magnetic field (B = 0–7 T). The probe is tested for the resistivity and Hall measurements performed on a LaAlO{sub 3}–SrTiO{sub 3} heterointerface system with a conducting two dimensional electron gas.

Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bernevig, B.Andrei; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-01-15

We show that the bulk Dresselhauss (k{sup 3}) spin-orbit coupling term leads to an intrinsic spin-Hall effect in n-doped bulk GaAs, but without the appearance of uniform magnetization. The spin-Hall effect in strained and unstrained bulk GaAs has been recently observed experimentally by Kato et. al. [1]. We show that the experimental result is quantitatively consistent with the intrinsic spin-Hall effect due to the Dresselhauss term, when lifetime broadening is taken into account. On the other hand, extrinsic contribution to the spin-Hall effect is several orders of magnitude smaller than the observed effect.

Valence Band Structure of Highly Efficient p-type Thermoelectric PbTe-PbS Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jaworski, C. M.; Nielsen, Mechele; Wang, Hsin

New experimental evidence is given relevant to the temperature-dependence of valence band structure of PbTe and PbTe1-xSx alloys (0.04 x 0.12), and its effect on the thermoelectric figure of merit zT. The x = 0.08 sample has zT ~ 1.55 at 773K. The magnetic field dependence of the high-temperature Hall resistivity of heavily p-type (> 1019 cm-3) Na-doped PbTe1-xSx reveals the presence of high-mobility electrons. This put in question prior analyses of the Hall coefficient and the conclusion that PbTe would be an indirect gap semiconductor at temperatures where its zT is optimal. Possible origins for these electrons are discussed:more » they can be induced by photoconductivity, or by the topology of the Fermi surface when the L and -bands merge. Negative values for the low-temperature thermopower are also observed. Our data show that PbTe continues to be a direct gap semiconductor at temperatures where the zT and S2 of p-type PbTe are optimal e.g. 700-900K. The previously suggested temperature induced rapid rise in energy of the heavy hole LVB relative to the light hole UVB is not supported by the experimental data.« less

Point defect-induced magnetic properties in CuAlO2 films without magnetic impurities

NASA Astrophysics Data System (ADS)

Luo, Jie; Lin, Yow-Jon

2016-03-01

The magnetic properties of the undoped CuAlO2 thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy (VCu), oxygen vacancy, and interstitial oxygen (Oi) is established. It is shown that an increase in the number of acceptors (VCu and Oi) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors (VCu and Oi) in CuAlO2 could induce the ferromagnetic behavior at room temperature.

Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

DOE PAGES

Wang, Shuyu; Yu, Shifeng; Lu, Ming; ...

2016-11-30

In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

Mode Transitions in Hall Effect Thrusters

DTIC Science & Technology

2013-07-01

bM = number of pixels per bin m = spoke order 0m = spoke order m = 0 em = electron mass, 9.1110 -31 kg im = Xe ion mass, 2.18×10 -25...periodogram spectral estimate, Arb Hz -1 eT = electron temperature eT = electron temperature parallel to magnetic field, eV eT  = electron ...Fourier transform of x(t)  = inverse angle from 2D DFT, deg-1  = mean electron energy, eV * = material dependent cross-over energy, eV xy

Electrical properties of Pb{sub 1-x}Mn{sub x}Te single crystals with an excess of tellurium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bagieva, G. Z., E-mail: bagieva-gjulandam@rambler.ru; Abdinova, G. D.; Mustafayev, N. B.

2013-03-15

The effect of excess Te atoms (as high as 0.5 at %) and thermal treatment at 473 K for 120 h on the electrical conductivity {sigma}, the thermopower coefficient {alpha}, and the Hall coefficient R of Pb{sub 0.96}Mn{sub 0.04}Te single crystals in the temperature range {approx}77-300 K is investigated. It is shown that excess atoms of tellurium predominantly act as acceptor impurity centers at low concentrations in unannealed samples and form antisite defects at relatively high concentrations (0.05 at % or higher) being located mainly in vacancies of the lead sublattice, and decrease the hole concentration. As a result ofmore » annealing, certain lattice defects (for example, deformational) are healed, and the accommodation process for Te atoms at lead-sublattice vacancies is intensified. These processes substantially affect the values of the electrical parameters, their temperature dependences, as well as the sign of the thermopower and Hall coefficients of the samples.« less

Magnetization and anomalous Hall effect in SiO2/Fe/SiO2 trilayers

NASA Astrophysics Data System (ADS)

Sekhar Das, Sudhansu; Senthil Kumar, M.

2017-03-01

SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with (1 1 0) texture and that the two SiO2 layers are amorphous. Magnetic measurements performed with the applied field in in-plane and perpendicular direction to the film plane confirmed that the samples are soft ferromagnetic having strong in-plane magnetic anisotropy. The temperature dependence of magnetization shows complex behavior with the coexistence of both ferromagnetic and superparamagnetic properties. The transport properties of the samples as studied through Hall effect measurements show anomalous Hall effect (AHE). An enhancement of about 14 times in the saturation anomalous Hall resistance (R\\text{hs}\\text{A} ) was observed upon reducing the t Fe from 300 to 50 Å. The maximum value of R\\text{hs}\\text{A}   =  2.3 Ω observed for t Fe  =  50 Å sample is about 4 orders of magnitude larger than that reported for bulk Fe. When compared with the single Fe film, a maximum increase of about 56% in the R\\text{hs}\\text{A} was observed in sandwiched Fe (50 Å) film. Scaling law suggests that the R s follows the longitudinal resistivity (ρ) as, {{R}\\text{s}}\\propto {ρ1.9} , suggesting side jump as the dominant mechanism of the AHE. A maximum enhancement of about 156% in the sensitivity S was observed.

On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prokofieva, L. V., E-mail: lprokofieva496@gmail.com; Konstantinov, P. P.; Shabaldin, A. A.

2016-06-15

The technique for measuring the Hall coefficient and electrical conductivity in the thermal cycling mode is used to study the effect of the Sn impurity on the microstructure and properties of pressed ZnSb samples. Tin was introduced as an excess component (0.1 and 0.2 at %) and as a substitutional impurity for Zn and Sb atoms in a concentration of (2–2.5) at % The temperature dependences of the parameters of lightly doped samples are fundamentally like similar curves for ZnSb with 0.1 at % of Cu. The highest Hall concentration, 1.4 × 10{sup 19} cm{sup –3} at 300 K, ismore » obtained upon the introduction of 0.1 at % of Sn; the dimensionless thermoelectric figure of merit attains its maximum value of 0.85 at 660 K. The experimental data are discussed under the assumption of two doping mechanisms, which are effective in different temperature ranges, with zinc vacancies playing the decisive role of acceptor centers. In two ZnSb samples with SnSb and ZnSn additives, the charge-carrier compensation effect is observed; this effect depends on temperature and markedly changes with doping type. As in p-type A{sup IV}–B{sup VI} materials with a low Sn content, hole compensation can be attributed to atomic recharging Sn{sup 2+} → Sn{sup 4+}. Types of compensating complexes are considered.« less

Spin-Hall Switching of In-plane Exchange Biased Heterostructures

NASA Astrophysics Data System (ADS)

Mann, Maxwell; Beach, Geoffrey

The spin Hall effect (SHE) in heavy-metal/ferromagnet bilayers generates a pure transverse spin current from in-plane charge current, allowing for efficient switching of spintronic devices with perpendicular magnetic anisotropy. Here, we demonstrate that an AFM deposited adjacent to the FM establishes a large in-plane exchange bias field, allowing operation at zero HIP. We sputtered Pt(3nm)/Co(0.9nm)/Ni80Co20O(tAF) stacks at room-temperature in an in-plane magnetic field of 3 kOe. The current-induced effective field was estimated in Hall cross devices by measuring the variation of the out-of-plane switching field as a function of JIP and HIP. The spin torque efficiency, dHSL/dJIP, is measured versus HIP for a sample with tAF =30 nm, and for a control in which NiCoO is replaced by TaOx. In the latter, dHSL/dJIP varied linearly with HIP. In the former, dHSL/dJIP varied nonlinearly with HIP and exhibited an offset indicating nonzero spin torque efficiency with zero HIP. The magnitude of HEB was 600 Oe in-plane.

Hall Effect Thruster Plume Contamination and Erosion Study

NASA Technical Reports Server (NTRS)

Jaworske, Donald A.

2000-01-01

The objective of the Hall effect thruster plume contamination and erosion study was to evaluate the impact of a xenon ion plume on various samples placed in the vicinity of a Hall effect thruster for a continuous 100 hour exposure. NASA Glenn Research Center was responsible for the pre- and post-test evaluation of three sample types placed around the thruster: solar cell cover glass, RTV silicone, and Kapton(R). Mass and profilometer), were used to identify the degree of deposition and/or erosion on the solar cell cover glass, RTV silicone, and Kapton@ samples. Transmittance, reflectance, solar absorptance, and room temperature emittance were used to identify the degree of performance degradation of the solar cell cover glass samples alone. Auger spectroscopy was used to identify the chemical constituents found on the surface of the exposed solar cell cover glass samples. Chemical analysis indicated some boron nitride contamination on the samples, from boron nitride insulators used in the body of the thruster. However, erosion outweighted contamination. All samples exhibited some degree of erosion. with the most erosion occurring near the centerline of the plume and the least occurring at the +/- 90 deg positions. For the solar cell cover glass samples, erosion progressed through the antireflective coating and into the microsheet glass itself. Erosion occurred in the solar cell cover glass, RTV silicone and Kapton(R) at different rates. All optical properties changed with the degree of erosion, with solar absorptance and room temperature emittance increasing with erosion. The transmittance of some samples decreased while the reflectance of some samples increased and others decreased. All results are consistent with an energetic plume of xenon ions serving as a source for erosion.

Hall Thruster Thermal Modeling and Test Data Correlation

NASA Technical Reports Server (NTRS)

Myers, James

2016-01-01

HERMeS - Hall Effect Rocket with Magnetic Shielding. Developed through a joint effort by NASA/GRC and the Jet Propulsion Laboratory (JPL). Design goals: High power (12.5 kW) high Isp (3000 sec), high efficiency (> 60%), high throughput (10,000 kg), reduced plasma erosion and increased life (5 yrs) to support Asteroid Redirect Robotic Mission (ARRM). Further details see "Performance, Facility Pressure Effects and Stability Characterization Tests of NASAs HERMeS Thruster" by H. Kamhawi and team. Hall Thrusters (HT) inherently operate at elevated temperatures approx. 600 C (or more). Due to electric magnetic (E x B) fields used to ionize and accelerate propellant gas particles (i.e., plasma). Cooling is largely limited to radiation in vacuum environment.Thus the hardware components must withstand large start-up delta-T's. HT's are constructed of multiple materials; assorted metals, non-metals and ceramics for their required electrical and magnetic properties. To mitigate thermal stresses HT design must accommodate the differential thermal growth from a wide range of material Coef. of Thermal Expansion (CTEs). Prohibiting the use of some bolted/torqued interfaces.Commonly use spring loaded interfaces, particularly at the metal-to-ceramic interfaces to allow for slippage.However most component interfaces must also effectively conduct heat to the external surfaces for dissipation by radiation.Thus contact pressure and area are important.

Instabilities and transport in Hall plasmas with ExB drift

NASA Astrophysics Data System (ADS)

Smolyakov, Andrei

2016-10-01

Low temperature plasma with moderate magnetic field, where the ions are not or just weakly magnetized, i.e. the ion Larmor radius being larger or comparable to the characteristic length scale of interest (e.g. the size ofthe system), have distinctly different properties from strongly magnetized plasmas such as that for fusion applications. Such parameters regimes are generally defined here as Hall plasmas. The natural scale separation between the ion and electron Larmor radii in Hall plasma, further exploited by the application of the external electric field, offers unique applications in various plasma devices for material processing and electric propulsion. Plasmas in such devices are in strongly non-equilibrium state making it prone to a number of instabilities. This talk presents physics description of the dominant unstable modes in ExB Hall plasmas resulting in highly turbulent state with nonlinear coherent structures and anomalous electron current. Since ions are un-magnetized, fundamental instabilities operating in low temperature Hall plasmas are very different from much studied gradients (density, temperature and magnetic field) driven drift-wave turbulence in strongly magnetized plasmas for fusion applications. As a result the nonlinear saturation mechanisms, role of the ExB shear flows are also markedly different in such plasmas. We review the basic instabilities in these plasmas which are related to the ion-sound, low-hybrid and anti-drift modes, discuss nonlinear saturation and anomalous transport mechanisms. The advanced nonlinear fluid model for such plasmas and results of nonlinear simulations of turbulence and anomalous transport performed within a modified BOUT++ framework will be presented. Research supported by NSERC Canada and US AFOSR FA9550-15-1-0226.

Formulation of the relativistic quantum Hall effect and parity anomaly

NASA Astrophysics Data System (ADS)

Yonaga, Kouki; Hasebe, Kazuki; Shibata, Naokazu

2016-06-01

We present a relativistic formulation of the quantum Hall effect on Haldane sphere. An explicit form of the pseudopotential is derived for the relativistic quantum Hall effect with/without mass term. We clarify particular features of the relativistic quantum Hall states with the use of the exact diagonalization study of the pseudopotential Hamiltonian. Physical effects of the mass term to the relativistic quantum Hall states are investigated in detail. The mass term acts as an interpolating parameter between the relativistic and nonrelativistic quantum Hall effects. It is pointed out that the mass term unevenly affects the many-body physics of the positive and negative Landau levels as a manifestation of the "parity anomaly." In particular, we explicitly demonstrate the instability of the Laughlin state of the positive first relativistic Landau level with the reduction of the charge gap.

Quasi-particle properties from tunneling in the v = 5/2 fractional quantum Hall state.

PubMed

Radu, Iuliana P; Miller, J B; Marcus, C M; Kastner, M A; Pfeiffer, L N; West, K W

2008-05-16

Quasi-particles with fractional charge and statistics, as well as modified Coulomb interactions, exist in a two-dimensional electron system in the fractional quantum Hall (FQH) regime. Theoretical models of the FQH state at filling fraction v = 5/2 make the further prediction that the wave function can encode the interchange of two quasi-particles, making this state relevant for topological quantum computing. We show that bias-dependent tunneling across a narrow constriction at v = 5/2 exhibits temperature scaling and, from fits to the theoretical scaling form, extract values for the effective charge and the interaction parameter of the quasi-particles. Ranges of values obtained are consistent with those predicted by certain models of the 5/2 state.

Stratification of welding fumes and grinding particles in a large factory hall equipped with displacement ventilation.

PubMed

Niemelä, R; Koskela, H; Engström, K

2001-08-01

The purpose of the study was to investigate the performance of displacement ventilation in a large factory hall where large components of stainless steel for paper, pulp and chemical industries were manufactured. The performance of displacement ventilation was evaluated in terms of concentration distributions of welding fumes and grinding particles, flow field of the supply air and temperature distributions. Large differences in vertical stratification patterns between hexavalent chromium (Cr(VI)) and other particulate contaminants were observed. The concentration of Cr(VI) was notably lower in the zone of occupancy than in the upper part of the factory hall, whereas the concentrations of total airborne particles and trivalent chromium (Cr(III)) were higher in the occupied zone than in the upper zone. The stratification of Cr(VI) had the same tendency as the air temperature stratification caused by the displacement flow field.

Thermal generation of spin current in epitaxial CoFe{sub 2}O{sub 4} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Er-Jia, E-mail: ejguophysics@gmail.com, E-mail: klaeui@uni-mainz.de; Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830; Herklotz, Andreas

2016-01-11

The longitudinal spin Seebeck effect (LSSE) has been investigated in high-quality epitaxial CoFe{sub 2}O{sub 4} (CFO) thin films. The thermally excited spin currents in the CFO films are electrically detected in adjacent Pt layers due to the inverse spin Hall effect. The LSSE signal exhibits a linear increase with increasing temperature gradient, yielding a LSSE coefficient of ∼100 nV/K at room temperature. The temperature dependence of the LSSE is investigated from room temperature down to 30 K, showing a significant reduction at low temperatures, revealing that the total amount of thermally generated magnons decreases. Furthermore, we demonstrate that the spin Seebeck effectmore » is an effective tool to study the magnetic anisotropy induced by epitaxial strain, especially in ultrathin films with low magnetic moments.« less

Understanding and control of bipolar self-doping in copper nitride

NASA Astrophysics Data System (ADS)

Fioretti, Angela N.; Schwartz, Craig P.; Vinson, John; Nordlund, Dennis; Prendergast, David; Tamboli, Adele C.; Caskey, Christopher M.; Tuomisto, Filip; Linez, Florence; Christensen, Steven T.; Toberer, Eric S.; Lany, Stephan; Zakutayev, Andriy

2016-05-01

Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu3N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu3N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu3N with 1017 electrons/cm3 for low growth temperature (≈35 °C) and p-type with 1015 holes/cm3-1016 holes/cm3 for elevated growth temperatures (50 °C-120 °C). Mobility for both types of Cu3N was ≈0.1 cm2/Vs-1 cm2/Vs. Additionally, temperature-dependent Hall effect measurements indicate that ionized defects are an important scattering mechanism in p-type films. By combining X-ray absorption spectroscopy and first-principles defect theory, we determined that VCu defects form preferentially in p-type Cu3N, while Cui defects form preferentially in n-type Cu3N, suggesting that Cu3N is a compensated semiconductor with conductivity type resulting from a balance between donor and acceptor defects. Based on these theoretical and experimental results, we propose a kinetic defect formation mechanism for bipolar doping in Cu3N that is also supported by positron annihilation experiments. Overall, the results of this work highlight the importance of kinetic processes in the defect physics of metastable materials and provide a framework that can be applied when considering the properties of such materials in general.

Satellite propulsion spectral signature detection and analysis through Hall effect thruster plume and atmospheric modeling

NASA Astrophysics Data System (ADS)

Wheeler, Pamela; Cobb, Richard; Hartsfield, Carl; Prince, Benjamin

2016-09-01

Space Situational Awareness (SSA) is of utmost importance in today's congested and contested space environment. Satellites must perform orbital corrections for station keeping, devices like high efficiency electric propulsion systems such as a Hall effect thrusters (HETs) to accomplish this are on the rise. The health of this system is extremely important to ensure the satellite can maintain proper position and perform its intended mission. Electron temperature is a commonly used diagnostic to determine the efficiency of a hall thruster. Recent papers have coordinated near infrared (NIR) spectral measurements of emission lines in xenon and krypton to electron temperature measurements. Ground based observations of these spectral lines could allow the health of the thruster to be determined while the satellite is in operation. Another issue worth considering is the availability of SSA assets for ground-based observations. The current SSA architecture is limited and task saturated. If smaller telescopes, like those at universities, could successfully detect these signatures they could augment data collection for the SSA network. To facilitate this, precise atmospheric modeling must be used to pull out the signature. Within the atmosphere, the NIR has a higher transmission ratio and typical HET propellants are approximately 3x the intensity in the NIR versus the visible spectrum making it ideal for ground based observations. The proposed research will focus on developing a model to determine xenon and krypton signatures through the atmosphere and estimate the efficacy through ground-based observations. The model will take power modes, orbit geometries, and satellite altitudes into consideration and be correlated with lab and field observations.

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a highmore » field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.« less

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors

DOE PAGES

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki; ...

2018-03-26

Here, anatase TiO 2 is a promising material for a vast array of electronic, energy, and environmental applications, including photocatalysis, photovoltaics, and sensors. A key requirement for these applications is the ability to modulate its electrical properties without dominant dopant scattering and while maintaining high carrier mobility. Here, we demonstrate the room temperature field-effect modulation of the conducting epitaxial interface between anatase TiO 2 and LaAlO 3 (001), which arises for LaO-terminated LaAlO 3, while the AlO 2-terminated interface is insulating. This approach, together with the metal-semiconductor field-effect transistor geometry, naturally bypasses the gate/channel interface traps, resulting in a highmore » field-effect mobility μ FE of 3.14 cm 2 (V s) –1 approaching 98% of the corresponding Hall mobility μ Hall. Accordingly, the channel conductivity is modulated over 6 orders of magnitude over a gate voltage range of ~4 V.« less

Developments in Scanning Hall Probe Microscopy

NASA Astrophysics Data System (ADS)

Chouinard, Taras; Chu, Ricky; David, Nigel; Broun, David

2009-05-01

Low temperature scanning Hall probe microscopy is a sensitive means of imaging magnetic structures with high spatial resolution and magnetic flux sensitivity approaching that of a Superconducting Quantum Interference Device. We have developed a scanning Hall probe microscope with novel features, including highly reliable coarse positioning, in situ optimization of sensor-sample alignment and capacitive transducers for linear, long range positioning measurement. This has been motivated by the need to reposition accurately above fabricated nanostructures such as small superconducting rings. Details of the design and performance will be presented as well as recent progress towards time-resolved measurements with sub nanosecond resolution.

Numerical analysis of Hall effect on the performance of magnetohydrodynamic heat shield system based on nonequilibrium Hall parameter model

NASA Astrophysics Data System (ADS)

Li, Kai; Liu, Jun; Liu, Weiqiang

2017-01-01

Magnetohydrodynamic (MHD) heat shield system, a novel thermal protection technique in the hypersonic field, has been paid much attention in recent years. In the real flight condition, not only the Lorentz force but also the Hall electric field is induced by the interaction between ionized air post shock and magnetic field. In order to analyze the action mechanisms of the Hall effect, numerical methods of coupling thermochemical nonequilibrium flow field with externally applied magnetic field as well as the induced electric field are constructed and validated. Based on the nonequilibrium model of Hall parameter, numerical simulations of the MHD heat shield system is conducted under two different magnetic induction strengths (B0=0.2 T, 0.5 T) on a reentry capsule forebody. Results show that, the Hall effect is the same under the two magnetic induction strengths when the wall is assumed to be conductive. For this case, with the Hall effect taken into account, the Lorentz force counter stream diminishes a lot and the circumferential component dominates, resulting that the heat flux and shock-off distance approach the case without MHD control. However, for the insulating wall, the Hall effect acts in different ways under these two magnetic induction strengths. For this case, with the Hall effect taken into account, the performance of MHD heat shield system approaches the case neglecting the Hall effect when B0 equals 0.2 T. Such performance becomes worse when B0 equals 0.5 T and the aerothermal environment on the capsule shoulder is even worse than the case without MHD control.

Spontaneous Hall effect in a chiral p-wave superconductor

NASA Astrophysics Data System (ADS)

Furusaki, Akira; Matsumoto, Masashige; Sigrist, Manfred

2001-08-01

In a chiral superconductor with broken time-reversal symmetry a ``spontaneous Hall effect'' may be observed. We analyze this phenomenon by taking into account the surface properties of a chiral superconductor. We identify two main contributions to the spontaneous Hall effect. One contribution originates from the Bernoulli (or Lorentz) force due to spontaneous currents running along the surfaces of the superconductor. The other contribution has a topological origin and is related to the intrinsic angular momentum of Cooper pairs. The latter can be described in terms of a Chern-Simons-like term in the low-energy field theory of the superconductor and has some similarities with the quantum Hall effect. The spontaneous Hall effect in a chiral superconductor is, however, nonuniversal. Our analysis is based on three approaches to the problem: a self-consistent solution of the Bogoliubov-de Gennes equation, a generalized Ginzburg-Landau theory, and a hydrodynamic formulation. All three methods consistently lead to the same conclusion that the spontaneous Hall resistance of a two-dimensional superconducting Hall bar is of order h/(ekFλ)2, where kF is the Fermi wave vector and λ is the London penetration depth; the Hall resistance is substantially suppressed from a quantum unit of resistance. Experimental issues in measuring this effect are briefly discussed.

Cooper Pair-Like Systems at High Temperature and their Role on Fluctuations Near the Critical Temperature

NASA Astrophysics Data System (ADS)

Ausloos, M.; Dorbolo, S.

A logarithmic behavior is hidden in the linear temperature regime of the electrical resistivity R(T) of some YBCO sample below 2Tc where "pairs" break apart, fluctuations occur and "a gap is opening". An anomalous effect also occurs near 200 K in the normal state Hall coefficient. In a simulation of oxygen diffusion in planar 123 YBCO, an anomalous behavior is found in the oxygen-vacancy motion near such a temperature. We claim that the behavior of the specific heat above and near the critical temperature should be reexamined in order to show the influence and implications of fluctuations and dimensionality on the nature of the phase transition and on the true onset temperature.

Performance and Environmental Test Results of the High Voltage Hall Accelerator Engineering Development Unit

NASA Technical Reports Server (NTRS)

Kamhawi, Hani; Haag, Thomas; Huang, Wensheng; Shastry, Rohit; Pinero, Luis; Peterson, Todd; Mathers, Alex

2012-01-01

NASA Science Mission Directorate's In-Space Propulsion Technology Program is sponsoring the development of a 3.5 kW-class engineering development unit Hall thruster for implementation in NASA science and exploration missions. NASA Glenn and Aerojet are developing a high fidelity high voltage Hall accelerator that can achieve specific impulse magnitudes greater than 2,700 seconds and xenon throughput capability in excess of 300 kilograms. Performance, plume mappings, thermal characterization, and vibration tests of the high voltage Hall accelerator engineering development unit have been performed. Performance test results indicated that at 3.9 kW the thruster achieved a total thrust efficiency and specific impulse of 58%, and 2,700 sec, respectively. Thermal characterization tests indicated that the thruster component temperatures were within the prescribed material maximum operating temperature limits during full power thruster operation. Finally, thruster vibration tests indicated that the thruster survived the 3-axes qualification full-level random vibration test series. Pre and post-vibration test performance mappings indicated almost identical thruster performance. Finally, an update on the development progress of a power processing unit and a xenon feed system is provided.

Room temperature magneto-transport properties of nanocomposite Fe-In2O3 thin films

NASA Astrophysics Data System (ADS)

Tambasov, Igor A.; Gornakov, Kirill O.; Myagkov, Victor G.; Bykova, Liudmila E.; Zhigalov, Victor S.; Matsynin, Alexey A.; Yozhikova, Ekaterina V.

2015-12-01

A ferromagnetic Fe-In2O3 nanocomposite thin film has been synthesized by the thermite reaction Fe2O3+In→Fe-In2O3. Measurements of the Hall carrier concentration, Hall mobility and magnetoresistance have been conducted at room temperature. The nanocomposite Fe-In2O3 thin film had n=1.94·1020 cm-3, μ=6.45 cm2/Vs and negative magnetoresistance. The magnetoresistance for 8.8 kOe was ~-0.22%.The negative magnetoresistance was well described by the weak localization and model proposed by Khosla and Fischer.

Iodine Hall Thruster Propellant Feed System for a CubeSat

NASA Technical Reports Server (NTRS)

Polzin, Kurt A.

2014-01-01

There has been significant work recently in the development of iodine-fed Hall thrusters for in-space propulsion applications.1 The use of iodine as a propellant provides many advantages over present xenon-gas-fed Hall thruster systems. Iodine is a solid at ambient temperature (no pressurization required) and has no special handling requirements, making it safe for secondary flight opportunities. It has exceptionally high ?I sp (density times specific impulse), making it an enabling technology for small satellite near-term applications and providing system level advantages over mid-term high power electric propulsion options. Iodine provides thrust and efficiency that are comparable to xenonfed Hall thrusters while operating in the same discharge current and voltage regime, making it possible to leverage the development of flight-qualified xenon Hall thruster power processing units for the iodine application. Work at MSFC is presently aimed at designing, integrating, and demonstrating a flight-like iodine feed system suitable for the Hall thruster application. This effort represents a significant advancement in state-of-the-art. Though Iodine thrusters have demonstrated high performance with mission enabling potential, a flight-like feed system has never been demonstrated and iodine compatible components do not yet exist. Presented in this paper is the end-to-end integrated feed system demonstration. The system includes a propellant tank with active feedback-control heating, fill and drain interfaces, latching and proportional flow control valves (PFCV), flow resistors, and flight-like CubeSat power and control electronics. Hardware is integrated into a CubeSat-sized structure, calibrated and tested under vacuum conditions, and operated under under hot-fire conditions using a Busek BHT-200 thruster designed for iodine. Performance of the system is evaluated thorugh accurate measurement of thrust and a calibrated of mass flow rate measurement, which is a function of reservoir temperature/pressure, the flow resistors, and the setting of the PFCV. The calibration is performed using independent flow control monitoring techniques, providing an in situ measure of the flowrate as a function of controllable parameters. The reservoir temperature controls the iodine sublimation rate, providing propellant to ths thruster by pressurizing the propellant feed system to approx.1-2 psi. Control of the temperature and the PFCV are used to maintain reservoir pressure and keep the thruster discharge current constant.

Hydrodynamic Model for Density Gradients Instability in Hall Plasmas Thrusters

NASA Astrophysics Data System (ADS)

Singh, Sukhmander

2017-10-01

There is an increasing interest for a correct understanding of purely growing electromagnetic and electrostatic instabilities driven by a plasma gradient in a Hall thruster devices. In Hall thrusters, which are typically operated with xenon, the thrust is provided by the acceleration of ions in the plasma generated in a discharge chamber. The goal of this paper is to study the instabilities due to gradients of plasma density and conditions for the growth rate and real part of the frequency for Hall thruster plasmas. Inhomogeneous plasmas prone a wide class of eigen modes induced by inhomogeneities of plasma density and called drift waves and instabilities. The growth rate of the instability has a dependences on the magnetic field, plasma density, ion temperature and wave numbers and initial drift velocities of the plasma species.

The Other Hall Effect: College Board Physics

ERIC Educational Resources Information Center

Sheppard, Keith; Gunning, Amanda M.

2013-01-01

Edwin Herbert Hall (1855-1938), discoverer of the Hall effect, was one of the first winners of the AAPT Oersted Medal for his contributions to the teaching of physics. While Hall's role in establishing laboratory work in high schools is widely acknowledged, his position as chair of the physics section of the Committee on College Entrance…

Hall effect mobility for SiC MOSFETs with increasing dose of nitrogen implantation into channel region

NASA Astrophysics Data System (ADS)

Noguchi, Munetaka; Iwamatsu, Toshiaki; Amishiro, Hiroyuki; Watanabe, Hiroshi; Kita, Koji; Yamakawa, Satoshi

2018-04-01

The Hall effect mobility (μHall) of the Si-face 4H-SiC metal–oxide–semiconductor field effect transistor (MOSFET) with a nitrogen (N)-implanted channel region was investigated by increasing the N dose. The μHall in the channel region was systematically examined regarding channel structures, that is, the surface and buried channels. It was experimentally demonstrated that increasing the N dose results in an improvement in μHall in the channel region due to the formation of the buried channel. However, further increase in N dose was found to decrease the μHall in the channel region, owing to the decrease in the electron mobility in the N-implanted bulk region.

High Temperature Annealing of MBE-grown Mg-doped GaN

NASA Astrophysics Data System (ADS)

Contreras, S.; Konczewicz, L.; Peyre, H.; Juillaguet, S.; Khalfioui, M. Al; Matta, S.; Leroux, M.; Damilano, B.; Brault, J.

2017-06-01

In this report, are shown the results of high temperature resistivity and Hall Effect studies of Mg-doped GaN epilayers. The samples studied were grown on (0001) (c-plane) sapphire by molecular beam epitaxy and 0.5 μm GaN:Mg layers have been achieved on low temperature buffers of GaN (30 nm) and AlN ( 150 nm). The experiments were carried out in the temperature range from 300 K up to 900 K. Up to about 870 K a typical thermally activated conduction process has been observed with the activation energy value EA = 215 meV. However, for higher temperatures, an annealing effect is observed in all the investigated samples. The increase of the free carrier concentration as a function of time leads to an irreversible decrease of sample resistivity of more than 60%.

Topological insulator thin films starting from the amorphous phase-Bi{sub 2}Se{sub 3} as example

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barzola-Quiquia, J., E-mail: j.barzola@physik.uni-leipzig.de; Lehmann, T.; Stiller, M.

We present a new method to obtain topological insulator Bi{sub 2}Se{sub 3} thin films with a centimeter large lateral length. To produce amorphous Bi{sub 2}Se{sub 3} thin films, we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing, the samples transform into the rhombohedral Bi{sub 2}Se{sub 3} crystalline structure which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared tomore » the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance and the Hall effect at different temperatures between 2 K and 275 K. At temperatures T ≲ 50 K and fields B ≲ 1 T, we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods.« less

Tunneling Anomalous and Spin Hall Effects.

PubMed

Matos-Abiague, A; Fabian, J

2015-07-31

We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

Magnetic phase diagram and electronic structure of UPt 2 Si 2 at high magnetic fields: A possible field-induced Lifshitz transition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grachtrup, D. Schulze; Steinki, N.; Süllow, S.

2017-04-14

We have measured Hall effect, magnetotransport and magnetostriction on the field induced phases of single crystalline UPt2Si2 in magnetic fields up to 60T at temperatures down to 50mK, this way firmly establishing the phase diagram for magnetic fields Bka and c axes. Moreover, for Bkc axis we observe strong changes in the Hall effect at the phase boundaries. From a comparison to band structure calculations utilizing the concept of a dual nature of the uranium 5f electrons, we propose that these represent field induced topological changes of the Fermi surface due to at least one Lifshitz transition. Furthermore, we findmore » a unique history dependence of the magnetotransport and magnetostriction data, indicating that the proposed Lifshitz type transition is of a discontinuous nature, as predicted for interacting electron systems.« less

In situ Raman Spectroscopy Study of the Formation of Graphene from Urea and Graphite Oxide

DTIC Science & Technology

2012-09-01

pp. 075404, Aug., 2006. [5] K. S. Novoselov, Z. Jiang, Y. Zhang, S. Morozov, H. Stormer , U. Zeitler, J. Maan, G. Boebinger, P. Kim, and A. Geim...Room-temperature quantum hall effect in graphene.” Science, vol. 315, no. 5817, pp. 1379, Mar., 2007. [6] Y. Zhang, Y. W. Tan, H. L. Stormer , and

Magnet/Hall-Effect Random-Access Memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1991-01-01

In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.

Valley-chiral quantum Hall state in graphene superlattice structure

NASA Astrophysics Data System (ADS)

Tian, H. Y.; Tao, W. W.; Wang, J.; Cui, Y. H.; Xu, N.; Huang, B. B.; Luo, G. X.; Hao, Y. H.

2016-05-01

We theoretically investigate the quantum Hall effect in a graphene superlattice (GS) system, in which the two valleys of graphene are coupled together. In the presence of a perpendicular magnetic field, an ordinary quantum Hall effect is found with the sequence σxy=ν e^2/h(ν=0,+/-1,+/-2,\\cdots) . At the zeroth Hall platform, a valley-chiral Hall state stemming from the single K or K' valley is found and it is localized only on one sample boundary contributing to the longitudinal conductance but not to the Hall conductivity. Our findings may shed light on the graphene-based valleytronics applications.

Near-Surface Plasma Characterization of the 12.5-kW NASA TDU1 Hall Thruster

NASA Technical Reports Server (NTRS)

Shastry, Rohit; Huang, Wensheng; Kamhawi, Hani

2015-01-01

To advance the state-of-the-art in Hall thruster technology, NASA is developing a 12.5-kW, high-specific-impulse, high-throughput thruster for the Solar Electric Propulsion Technology Demonstration Mission. In order to meet the demanding lifetime requirements of potential missions such as the Asteroid Redirect Robotic Mission, magnetic shielding was incorporated into the thruster design. Two units of the resulting thruster, called the Hall Effect Rocket with Magnetic Shielding (HERMeS), were fabricated and are presently being characterized. The first of these units, designated the Technology Development Unit 1 (TDU1), has undergone extensive performance and thermal characterization at NASA Glenn Research Center. A preliminary lifetime assessment was conducted by characterizing the degree of magnetic shielding within the thruster. This characterization was accomplished by placing eight flush-mounted Langmuir probes within each discharge channel wall and measuring the local plasma potential and electron temperature at various axial locations. Measured properties indicate a high degree of magnetic shielding across the throttle table, with plasma potential variations along each channel wall being less than or equal to 5 eV and electron temperatures being maintained at less than or equal to 5 eV, even at 800 V discharge voltage near the thruster exit plane. These properties indicate that ion impact energies within the HERMeS will not exceed 26 eV, which is below the expected sputtering threshold energy for boron nitride. Parametric studies that varied the facility backpressure and magnetic field strength at 300 V, 9.4 kW, illustrate that the plasma potential and electron temperature are insensitive to these parameters, with shielding being maintained at facility pressures 3X higher and magnetic field strengths 2.5X higher than nominal conditions. Overall, the preliminary lifetime assessment indicates a high degree of shielding within the HERMeS TDU1, effectively mitigating discharge channel erosion as a life-limiting mechanism.

Origin of the extremely large magnetoresistance in topological semimetal PtS n4

NASA Astrophysics Data System (ADS)

Luo, X.; Xiao, R. C.; Chen, F. C.; Yan, J.; Pei, Q. L.; Sun, Y.; Lu, W. J.; Tong, P.; Sheng, Z. G.; Zhu, X. B.; Song, W. H.; Sun, Y. P.

2018-05-01

PtS n4 with extremely large magnetoresistance (XMR), a fascinating topological material platform, hosts a novel topological structure and Dirac node arcs, in which the Dirac nodes form closed loops in the momentum space. Here we performed the angular dependent magnetoresistivity (AMR), Hall effect, heat capacity measurements, and first-principles calculations to study the electronic properties of topological semimetal PtS n4 . There are some interesting observations on PtS n4 . (1) In the different experimental probes, we observed the anomalies around T ˜55 K . Significant changes of the transport results and the heat capacity have been observed, indicating successive Fermi surface reconstruction induced by the temperature. It means there is Lifshitz transition (LT) induced by the temperature in PtS n4 . (2) The perfect compensation between the electron and hole has been found around T ˜30 K , where the XMR appears, which is confirmed by the Hall effect measurements and the first-principles calculations. The XMR effect in PtS n4 is suggested to originate from the combination of the electron-hole compensation and a particular orbital texture on the electron pocket. Meanwhile, we also found that LT seems to serve as a knob for the novel topological properties in two-dimensional (2D) topological semimetals (TSMs).

Strong Intrinsic Spin Hall Effect in the TaAs Family of Weyl Semimetals

NASA Astrophysics Data System (ADS)

Sun, Yan; Zhang, Yang; Felser, Claudia; Yan, Binghai

2016-09-01

Since their discovery, topological insulators are expected to be ideal spintronic materials owing to the spin currents carried by surface states with spin-momentum locking. However, the bulk doping problem remains an obstacle that hinders such an application. In this work, we predict that a newly discovered family of topological materials, the Weyl semimetals, exhibits a large intrinsic spin Hall effect that can be utilized to generate and detect spin currents. Our ab initio calculations reveal a large spin Hall conductivity in the TaAs family of Weyl materials. Considering the low charge conductivity of semimetals, Weyl semimetals are believed to present a larger spin Hall angle (the ratio of the spin Hall conductivity over the charge conductivity) than that of conventional spin Hall systems such as the 4 d and 5 d transition metals. The spin Hall effect originates intrinsically from the bulk band structure of Weyl semimetals, which exhibit a large Berry curvature and spin-orbit coupling, so the bulk carrier problem in the topological insulators is naturally avoided. Our work not only paves the way for employing Weyl semimetals in spintronics, but also proposes a new guideline for searching for the spin Hall effect in various topological materials.

Anomalous Change of Hall Coefficient in Overdoped La2-xSrxCu1-yZnyO4 around x = 0.2

NASA Astrophysics Data System (ADS)

Tonishi, Jun; Suzuki, Takao; Goto, Takayuki

2006-09-01

The Hall coefficient (RH) has been measured in 0.5% Zn-doped La2-xSrxCu0.995Zn0.005O4 under high magnetic fields up to 12 T. With decreasing temperature, RH increases and begins to decrease below a temperature TRH. This characteristic temperature TRH has the local maximum around x = 0.195, and this Sr-concentration coincides with that the superconducting transition temperature is slightly suppressed. This behavior is quite similar to the phenomena observed in the stripe phase in x ˜ 0.12. These results suggest that the anomalous decrease of RH around x = 0.195 observed in this study is responsible for the "1/4"-anomaly [as reported by Kakinuma et al., Phys. Rev. B 59, 1491 (1999).].

Robust tunability of magnetoresistance in half-Heusler R PtBi ( R = Gd , Dy, Tm, and Lu) compounds

DOE PAGES

Mun, Eundeok; Bud'ko, Sergey L.; Canfield, Paul C.

2016-03-15

We present the magnetic field dependencies of transport properties for RPtBi ( R = Gd, Dy, Tm, and Lu) half-Heusler compounds. Temperature- and field-dependent resistivity measurements of high-quality RPtBi single crystals reveal an unusually large, nonsaturating magnetoresistance (MR) up to 300 K under a moderate magnetic field of H = 140 kOe. At 300 K, the large MR effect decreases as the rare earth is traversed from Gd to Lu and the magnetic field dependence of MR shows a deviation from the conventional H2 behavior. The Hall coefficient ( RH) for R = Gd indicates a sign change around 120more » K, whereas RH curves for R = Dy, Tm, and Lu remain positive for all measured temperatures. At 300 K, the Hall resistivity reveals a deviation from the linear field dependence for all compounds. Thermoelectric power measurements on this family show strong temperature and magnetic field dependencies which are consistent with resistivity measurements. A highly enhanced thermoelectric power under applied magnetic field is observed as high as ~100 μV/K at 140 kOe. Furthermore, analysis of the transport data in this series reveals that the rare-earth-based half-Heusler compounds provide opportunities to tune MR effect through lanthanide contraction and to elucidate the mechanism of nontrivial MR.« less

The necessity of HVAC system for the registered architectural cultural heritage building

NASA Astrophysics Data System (ADS)

Popovici, Cătălin George; Hudişteanu, Sebastian Valeriu; Cherecheş, Nelu-Cristian

2018-02-01

This study is intended to highlight the role of the ventilation and air conditioning system for a theatre. It was chosen as a case study the "Vasile Alecsandri" National Theatre of Jassy. The paper also sought to make a comparison in three distinct scenarios for HVAC Main Hall system - ventilation and air conditioning system of the Main Hall doesn't work; only the ventilation system of the Main Hall works and ventilation and air conditioning system of the Main Hall works. For analysing the comfort parameters, the ANSYS-Fluent software was used to build a 2D model of the building and simulation of HVAC system functionality during winter season, in all three scenarios. For the studied scenarios, the external conditions of Jassy and the indoor conditions of the theatre, when the entire spectacle hall is occupied were considered. The main aspects evaluated for each case were the air temperature, air velocity and relative humidity. The results are presented comparatively as plots and spectra of the interest parameters.

Resonant Hall effect under generation of a self-sustaining mode of spin current in nonmagnetic bipolar conductors with identical characters between holes and electrons

NASA Astrophysics Data System (ADS)

Sakai, Masamichi; Takao, Hiraku; Matsunaga, Tomoyoshi; Nishimagi, Makoto; Iizasa, Keitaro; Sakuraba, Takahito; Higuchi, Koji; Kitajima, Akira; Hasegawa, Shigehiko; Nakamura, Osamu; Kurokawa, Yuichiro; Awano, Hiroyuki

2018-03-01

We have proposed an enhancement mechanism of the Hall effect, the signal of which is amplified due to the generation of a sustaining mode of spin current. Our analytic derivations of the Hall resistivity revealed the conditions indispensable for the observation of the effect: (i) the presence of the transverse component of an effective electric field due to spin splitting in chemical potential in addition to the longitudinal component; (ii) the simultaneous presence of holes and electrons each having approximately the same characteristics; (iii) spin-polarized current injection from magnetized electrodes; (iv) the boundary condition for the transverse current (J c, y = 0). The model proposed in this study was experimentally verified by using van der Pauw-type Hall devices consisting of the nonmagnetic bipolar conductor YH x (x ≃ 2) and TbFeCo electrodes. Replacing Au electrodes with TbFeCo electrodes alters the Hall resistivity from the ordinary Hall effect to the anomalous Hall-like effect with an enhancement factor of approximately 50 at 4 T. We interpreted the enhancement phenomenon in terms of the present model.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, J.; Bugaris, D. E.; Xiao, Z. L.

We report the occurrence of reentrantmetallic behavior in theWeyl semimetal NbP. When the appliedmagnetic field H is above a critical value H-c, a reentrance appears as a peak in the temperature-dependent resistivity rho(xx) (T) at T = T-p, similar to that observed in graphite where it was attributed to local superconductivity. The Tp(H) relationship follows a power-law dependence T-p similar to (H-H-c)(1/nu) where. can be derived from the temperature dependence of the zero-field resistivity rho(0)(T) similar to T-nu. From concurrent measurements of the transverse rho(xx) (T) and Hall rho(xy)(T) magnetoresistivities, we reveal a clear correlation between the rapidly increasing rho(xy)more » (T) and the occurrence of a peak in the rho(xx) (T) curve. Quantitative analysis indicates that the reentrantmetallic behavior arises from the competition of the magnetoconductivity sigma(xx) (T) with an additional component Delta sigma(xx) (T) = kappa(H)sigma(xx)(T) where kappa(H) = [rho(xy)(T)/rho(xx)(T)](2) is the Hall factor. We find that the Hall factor (kappa(H) approximate to 0.4) at peak temperature T-p is nearly field independent, leading to the observed T-p (H) relationship. Furthermore, the reentrant metallic behavior in rho(xx) (T) also is reflected in the behavior of rho(xx) (H) that ranges from nonsaturating at T > 70K to saturation at liquid-helium temperatures. The latter can be explained with the magnetic field dependence of the Hall factor kappa(H) (H). Our paper demonstrates that a semiclassical theory can account for the "anomalies" in the magnetotransport phenomena of NbP without invoking an exotic mechanism.« less

Activation energies for the ν=5/2 Fractional Quantum Hall Effect at 10 Tesla

NASA Astrophysics Data System (ADS)

Zhang, Chi; Du, R. R.; Pfeiffer, L. N.; West, K. W.

2010-03-01

We reported on the low-temperature magnetotransport in a high-purity (mobility ˜ 1x10^7cm^2/Vs) modulation-doped GaAs/AlGaAs quantum well with a high electron density (6x10^11 cm-2). A quantized ν=5/2 Hall plateau is observed at B ˜ 10 T, with an activation gap δ5/2˜ 125±10 mK; the plateau can persist up to ˜ 25^o tilt-field. We determined the activation energies δ and quasi-gap energies δ^quasi for the ν=5/2, 7/3, and 8/3 fractional quantum Hall states in tilted-magnetic field (θ). The δ5/2, δ7/3 and the δ5/2^quasi , δ7/3^quasi are found to decrease in θ. We will present the systematic data and discuss their implications on the spin-polarization of ν=5/2 states observed at 10 T.[4pt] [1] R. Willett, Phys. Rev. Lett. 59, 1776 (1987).[0pt] [2] W. Pan et al, Solid State Commun. 119, 641 (2001).

Topological Hall and Spin Hall Effects in Disordered Skyrmionic Textures

NASA Astrophysics Data System (ADS)

Ndiaye, Papa Birame; Akosa, Collins; Manchon, Aurelien; Spintronics Theory Group Team

We carry out a throughout study of the topological Hall and topological spin Hall effects in disordered skyrmionic systems: the dimensionless (spin) Hall angles are evaluated across the energy band structure in the multiprobe Landauer-Büttiker formalism and their link to the effective magnetic field emerging from the real space topology of the spin texture is highlighted. We discuss these results for an optimal skyrmion size and for various sizes of the sample and found that the adiabatic approximation still holds for large skyrmions as well as for few atomic size-nanoskyrmions. Finally, we test the robustness of the topological signals against disorder strength and show that topological Hall effect is highly sensitive to momentum scattering. This work was supported by the King Abdullah University of Science and Technology (KAUST) through the Award No OSR-CRG URF/1/1693-01 from the Office of Sponsored Research (OSR).

Crossover to the anomalous quantum regime in the extrinsic spin Hall effect of graphene

NASA Astrophysics Data System (ADS)

Ferreira, Aires; Milletari, Mirco

Recent reports of spin-orbit coupling enhancement in chemically modified graphene have opened doors to studies of the spin Hall effect with massless chiral fermions. Here, we theoretically investigate the interaction and impurity density dependence of the extrinsic spin Hall effect in spin-orbit coupled graphene. We present a nonperturbative quantum diagrammatic calculation of the spin Hall response function in the strong-coupling regime that incorporates skew scattering and anomalous impurity density-independent contributions on equal footing. The spin Hall conductivity dependence on Fermi energy and electron-impurity interaction strength reveals the existence of experimentally accessible regions where anomalous quantum processes dominate. Our findings suggest that spin-orbit-coupled graphene is an ideal model system for probing the competition between semiclassical and bona fide quantum scattering mechanisms underlying the spin Hall effect. A.F. gratefully acknowledges the financial support of the Royal Society (U.K.).

Nonlinearity in the effect of an inhomogeneous Hall angle

NASA Astrophysics Data System (ADS)

Koon, Daniel W.

2007-03-01

The differential equation for the electric potential in a conducting material with an inhomogeneous Hall angle is extended to the large-field limit. This equation is solved for a square specimen, using a successive over-relaxation [SOR] technique for matrices of up to 101x101 size, and the Hall weighting function -- the effect of local pointlike perturbations on the measured Hall angle -- is calculated as both the unperturbed Hall angle, θH, and the perturbation, δθH, exceed the linear, small angle limit. Preliminary results show that the Hall angle varies by no more than 5% if both | θH |<1 and | δθH |<1. Thus, previously calculated results for the Hall weighting function can be used for most materials in all but the most extreme magnetic fields.

High resolution study of magnetic ordering at absolute zero.

PubMed

Lee, M; Husmann, A; Rosenbaum, T F; Aeppli, G

2004-05-07

High resolution pressure measurements in the zero-temperature limit provide a unique opportunity to study the behavior of strongly interacting, itinerant electrons with coupled spin and charge degrees of freedom. Approaching the precision that has become the hallmark of experiments on classical critical phenomena, we characterize the quantum critical behavior of the model, elemental antiferromagnet chromium, lightly doped with vanadium. We resolve the sharp doubling of the Hall coefficient at the quantum critical point and trace the dominating effects of quantum fluctuations up to surprisingly high temperatures.

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

NASA Astrophysics Data System (ADS)

Gunning, Brendan; Lowder, Jonathan; Moseley, Michael; Alan Doolittle, W.

2012-08-01

Highly p-type GaN films with hole concentrations exceeding 6 × 1019 cm-3 grown by metal-modulated epitaxy are electrically characterized. Temperature-dependent Hall effect measurements at cryogenic temperatures reveal minimal carrier freeze-out in highly doped samples, while less heavily doped samples exhibited high resistivity and donor-compensated conductivity as is traditionally observed. Effective activation energies as low as 43 meV were extracted, and a maximum Mg activation efficiency of 52% was found. In addition, the effective activation energy was found to be negatively correlated to the hole concentration. These results indicate the onset of the Mott-Insulator transition leading to impurity band conduction.

Effects of the magnetic field gradient on the wall power deposition of Hall thrusters

NASA Astrophysics Data System (ADS)

Ding, Yongjie; Li, Peng; Zhang, Xu; Wei, Liqiu; Sun, Hezhi; Peng, Wuji; Yu, Daren

2017-04-01

The effect of the magnetic field gradient in the discharge channel of a Hall thruster on the ionization of the neutral gas and power deposition on the wall is studied through adopting the 2D-3V particle-in-cell (PIC) and Monte Carlo collisions (MCC) model. The research shows that by gradually increasing the magnetic field gradient while keeping the maximum magnetic intensity at the channel exit and the anode position unchanged, the ionization region moves towards the channel exit and then a second ionization region appears near the anode region. Meanwhile, power deposition on the walls decreases initially and then increases. To avoid power deposition on the walls produced by electrons and ions which are ionized in the second ionization region, the anode position is moved towards the channel exit as the magnetic field gradient is increased; when the anode position remains at the zero magnetic field position, power deposition on the walls decreases, which can effectively reduce the temperature and thermal load of the discharge channel.

Kerr effect from diffractive skew scattering in chiral px +/- ipy superconductors

NASA Astrophysics Data System (ADS)

König, Elio; Levchenko, Alex

We calculate the temperature dependent anomalous ac Hall conductance σH (Ω , T) for a two-dimensional chiral p-wave superconductor. This quantity determines the polar Kerr effect, as it was observed in Sr2RuO4. We concentrate on a single band model with arbitrary isotropic dispersion relation subjected to rare, weak impurities treated in the Born approximation. As we explicitly show by detailed computation, previously omitted contributions to extrinsic part of an anomalous Hall response, physically originating from diffractive skew scattering on quantum impurity complexes, appear to the leading order in impurity concentration. By direct comparison with published results from the literature we demonstrate the relevance of our findings for the interpretation of the Kerr effect measurements in superconductors. This work was financially supported in part by NSF Grants No. DMR-1606517 and ECCS-1560732 and at U of Wisconsin by the Office of the Vice Chancellor for Research and Graduate Education with funding from the Wisconsin Alumni Research Foundation.

Giant coercivity in perpendicularly magnetized cobalt monolayer

NASA Astrophysics Data System (ADS)

Lin, D. C.; Song, C.; Cui, B.; Wang, Y. Y.; Wang, G. Y.; Pan, F.

2012-09-01

We report giant coercivity (HC) up to 35 kOe at 4 K, measured by the anomalous Hall effect, in perpendicularly magnetized Co (˜0.3 nm) films, where Co is approximately one monolayer. The HC is dramatically reduced with huge applied current, due to Joule heating rather than Rashba effect. It is also sensitive to temperatures, producing almost zero HC at 200 K. The Curie temperature of the Co monolayer is ˜275 K, far lower than that of bulk Co. The giant HC could be explained by the strong interaction at Co/Pd interface, providing a promising paradise: one monolayer, one permanent magnet.

Thermodynamic theory of dislocation-enabled plasticity

NASA Astrophysics Data System (ADS)

Langer, J. S.

2017-11-01

The thermodynamic theory of dislocation-enabled plasticity is based on two unconventional hypotheses. The first of these is that a system of dislocations, driven by external forces and irreversibly exchanging heat with its environment, must be characterized by a thermodynamically defined effective temperature that is not the same as the ordinary temperature. The second hypothesis is that the overwhelmingly dominant mechanism controlling plastic deformation is thermally activated depinning of entangled pairs of dislocations. This paper consists of a systematic reformulation of this theory followed by examples of its use in analyses of experimentally observed phenomena including strain hardening, grain-size (Hall-Petch) effects, yielding transitions, and adiabatic shear banding.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Langer, J. S.

The thermodynamic theory of dislocation-enabled plasticity is based on two unconventional hypotheses. The first of these is that a system of dislocations, driven by external forces and irreversibly exchanging heat with its environment, must be characterized by a thermodynamically defined effective temperature that is not the same as the ordinary temperature. The second hypothesis is that the overwhelmingly dominant mechanism controlling plastic deformation is thermally activated depinning of entangled pairs of dislocations. This paper consists of a systematic reformulation of this theory followed by examples of its use in analyses of experimentally observed phenomena including strain hardening, grain-size (Hall-Petch) effects,more » yielding transitions, and adiabatic shear banding.« less

Development of internal magnetic probe for current density profile measurement in Versatile Experiment Spherical Torus

NASA Astrophysics Data System (ADS)

Yang, J.; Lee, J. W.; Jung, B. K.; Chung, K. J.; Hwang, Y. S.

2014-11-01

An internal magnetic probe using Hall sensors to measure a current density profile directly with perturbation of less than 10% to the plasma current is successfully operated for the first time in Versatile Experiment Spherical Torus (VEST). An appropriate Hall sensor is chosen to produce sufficient signals for VEST magnetic field while maintaining the small size of 10 mm in outer diameter. Temperature around the Hall sensor in a typical VEST plasma is regulated by blown air of 2 bars. First measurement of 60 kA VEST ohmic discharge shows a reasonable agreement with the total plasma current measured by Rogowski coil in VEST.

Numerical simulation of buoyancy peristaltic flow of Johnson-Segalman nanofluid in an inclined channel

NASA Astrophysics Data System (ADS)

Hayat, T.; Ayub, Sadia; Alsaedi, Ahmed; Ahmad, Bashir

2018-06-01

This study addresses mixed convection on peristaltic flow in an inclined channel. The relevant flow problem is developed for MHD Johnson-Segalman nanofluid. Hall current and thermal radiation are discussed. Channel boundaries are compliant in nature. Slip effects for velocity, temperature and concentration are examined. Long wavelength concept is employed. Variations for prominent parameters in velocity, temperature, concentration, heat transfer coefficient and streamlines are obtained via built-in numerical approach. Velocity shows significant decline for larger local temperature Grashof number. Heat transfer slows down for increasing thermophoresis and thermal slip parameters. Increase in bolus is reported for higher Weissenberg number.

Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator

NASA Astrophysics Data System (ADS)

Han, Jiahao; Richardella, A.; Siddiqui, Saima A.; Finley, Joseph; Samarth, N.; Liu, Luqiao

2017-08-01

The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.

Emergent quasicrystals in strongly correlated systems

NASA Astrophysics Data System (ADS)

Sagi, Eran; Nussinov, Zohar

2016-07-01

Commensurability is of paramount importance in numerous strongly interacting electronic systems. In the fractional quantum Hall effect, a rich cascade of increasingly narrow plateaux appear at larger denominator filling fractions. Rich commensurate structures also emerge, at certain filling fractions, in high temperature superconductors and other electronic systems. A natural question concerns the character of these and other electronic systems at irrational filling fractions. Here we demonstrate that quasicrystalline structures naturally emerge in these situations, and trigger behaviors not typically expected of periodic systems. We first show that irrationally filled quantum Hall systems cross over into quasiperiodically ordered configuration in the thin-torus limit. Using known properties of quasicrystals, we argue that these states are unstable against the effects of disorder, in agreement with the existence of quantum Hall plateaux. We then study analogous physical situations in a system of cold Rydberg atoms placed on an optical lattice. Such an experimental setup is generally disorder free, and can therefore be used to detect the emergent quasicrystals we predict. We discuss similar situations in the Falicov-Kimball model, where known exact results can be used to establish quasicrystalline structures in one and two dimensions. We briefly speculate on possible relations between our theoretical findings and the existence of glassy dynamics and other features of strongly correlated electronic systems.

Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

DOEpatents

Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

2001-01-01

The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

Scanning Hall probe microscopy of a diluted magnetic semiconductor

NASA Astrophysics Data System (ADS)

Kweon, Seongsoo; Samarth, Nitin; de Lozanne, Alex

2009-05-01

We have measured the micromagnetic properties of a diluted magnetic semiconductor as a function of temperature and applied field with a scanning Hall probe microscope built in our laboratory. The design philosophy for this microscope and some details are described. The samples analyzed in this work are Ga0.94Mn0.06As films grown by molecular beam epitaxy. We find that the magnetic domains are 2-4 μm wide and fairly stable with temperature. Magnetic clusters are observed above TC, which we ascribe to MnAs defects too small and sparse to be detected by a superconducting quantum interference device magnetometer.

Fluctuations and instabilities of a holographic metal

NASA Astrophysics Data System (ADS)

Jokela, Niko; Järvinen, Matti; Lippert, Matthew

2013-02-01

We analyze the quasinormal modes of the D2-D8' model of 2+1-dimensional, strongly-coupled, charged fermions in a background magnetic field and at non-zero density. The model is known to include a quantum Hall phase with integer filling fraction. As expected, we find a hydrodynamical diffusion mode at small momentum and the nonzero-temperature holographic zero sound, which becomes massive above a critical magnetic field. We confirm the previously-known thermodynamic instability. In addition, we discover an instability at low temperature, large mass, and in a charge density and magnetic field range near the quantum Hall phase to an inhomogeneous striped phase.

Spin-polarized ground state and exact quantization at ν=5/2

NASA Astrophysics Data System (ADS)

Pan, Wei

2002-03-01

The nature of the even-denominator fractional quantum Hall effect at ν=5/2 remains elusive, in particular, its ground state spin-polarization. An earlier, so-called "hollow core" model arrived at a spin-unpolarized wave function. The more recent calculations based on a model of BCS-like pairing of composite fermions, however, suggest that its ground state is spin-polarized. In this talk, I will first review the earlier experiments and then present our recent experimental results showing evidence for a spin-polarized state at ν=5/2. Our ultra-low temperature experiments on a high quality sample established the fully developed FQHE state at ν=5/2 as well as at ν=7/3 and 8/3, manifested by a vanishing R_xx and exact quantization of the Hall plateau. The tilted field experiments showed that the added in-plane magnetic fields not only destroyed the FQHE at ν=5/2, as seen before, but also induced an electrical anisotropy, which is now interpreted as a phase transition from a paired, spin-polarized ν=5/2 state to a stripe phase, not unlike the ones at ν=9/2, 11/2, etc in the N > 1 higher Landau levels. Furthermore, in the experiments on the heterojunction insulated-gate field-effect transistors (HIGFET) at dilution refrigerator temperatures, a strong R_xx minimum and a concomitant developing Hall plateau were observed at ν=5/2 in a magnetic field as high as 12.6 Tesla. This and the subsequent density dependent studies of its energy gap largely rule out a spin-singlet state and point quite convincingly towards a spin-polarized ground state at ν=5/2.

Effect of silver doping on the elastic properties of CdS nanoparticles

NASA Astrophysics Data System (ADS)

Dey, P. C.; Das, R.

2018-05-01

CdS and Ag doped CdS (CdS/Ag) nanoparticles have been prepared via chemical method from a Cadmium acetate precursor and Thiourea. The synthesized CdS and CdS/Ag nanoparticles have been characterized by the X-ray Diffraction and High Resolution Transmission Electron Microscope. Here, these nanoparticles have been synthesized at room temperature and all the characterization have also been done at room temperature only. The XRD results reveal that the products are crystalline with cubic zinc blende structure. HRTEM images show that the prepared nanoparticles are nearly spherical in shape. Williamson-Hall method and Size-Strain Plot (SSP) have been used to study the individual contribution of crystalline sizes and lattice strain on the peak broadening of the CdS and CdS/Ag nanoparticles. The different modified model of Williamson-Hall method such as, uniform deformation model, uniform stress deformation model and uniform energy density deformation model and SSP method have been used to calculate the different physical parameter such as lattice strain, stress and energy density for all diffraction peaks of the XRD, corresponding to the CdS and silver doped CdS (CdS/Ag). The obtained results reveal that the average particle size of the prepared CdS and CdS/Ag nanoparticles estimated from the HRTEM images, Williamson-Hall analysis and SSP method are highly correlated with each other. Further, all these result confirms that doping of Ag significantly affects the elastic properties of CdS.

3D Quantum Hall Effect of Fermi Arc in Topological Semimetals

NASA Astrophysics Data System (ADS)

Wang, C. M.; Sun, Hai-Peng; Lu, Hai-Zhou; Xie, X. C.

2017-09-01

The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a "wormhole" tunneling assisted by the Weyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of (d -2 )-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through the Weyl nodes, the sheet Hall conductivity evolves from the 1 /B dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, Cd3 As2 , or Na3Bi . This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.

Investigation on structural, optical and electrical properties of Cp2Mg flow varied p-GaN grown by MOCVD

NASA Astrophysics Data System (ADS)

Surender, S.; Pradeep, S.; Ramesh, R.; Baskar, K.

2016-05-01

In this work the effect of different concentration of Magnesium doped GaN (p-GaN) were systematically studied. The p-GaN epilayers were grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) with various flow rates of 100 sccm to 300 sccm using bis-(cyclopentadienyl) - magnesium (Cp2Mg) precursor. The samples were subjected to structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. Results indicated that the Mg doped GaN of 200 sccm Cp2Mg has the root mean square (rms) roughness of about 0.3 nm for a scan area of 5×5 µm2 which has good two dimensional growth. Moreover, Hall measurements results shows that (200 sccm Cp2Mg) Mg-doped GaN possess the highest hole concentration of 5.4×1017cm-3 and resistivity of 1.7 Ωcm at room temperature.

Investigation on structural, optical and electrical properties of Cp2Mg flow varied p-GaN grown by MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Surender, S.; Pradeep, S.; Ramesh, R.

2016-05-23

In this work the effect of different concentration of Magnesium doped GaN (p-GaN) were systematically studied. The p-GaN epilayers were grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) with various flow rates of 100 sccm to 300 sccm using bis-(cyclopentadienyl) - magnesium (Cp2Mg) precursor. The samples were subjected to structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. Results indicated that the Mg doped GaN of 200 sccm Cp2Mg has the root mean square (rms) roughness of about 0.3more » nm for a scan area of 5×5 µm{sup 2} which has good two dimensional growth. Moreover, Hall measurements results shows that (200 sccm Cp2Mg) Mg-doped GaN possess the highest hole concentration of 5.4×10{sup 17}cm{sup −3} and resistivity of 1.7 Ωcm at room temperature.« less

Noise in tunneling spin current across coupled quantum spin chains

NASA Astrophysics Data System (ADS)

Aftergood, Joshua; Takei, So

2018-01-01

We theoretically study the spin current and its dc noise generated between two spin-1 /2 spin chains weakly coupled at a single site in the presence of an over-population of spin excitations and a temperature elevation in one subsystem relative to the other, and we compare the corresponding transport quantities across two weakly coupled magnetic insulators hosting magnons. In the spin chain scenario, we find that applying a temperature bias exclusively leads to a vanishing spin current and a concomitant divergence in the spin Fano factor, defined as the spin current noise-to-signal ratio. This divergence is shown to have an exact analogy to the physics of electron scattering between fractional quantum Hall edge states and not to arise in the magnon scenario. We also reveal a suppression in the spin current noise that exclusively arises in the spin chain scenario due to the fermion nature of the spin-1/2 operators. We discuss how the spin Fano factor may be extracted experimentally via the inverse spin Hall effect used extensively in spintronics.

Quantum Hall effect in graphene with interface-induced spin-orbit coupling

NASA Astrophysics Data System (ADS)

Cysne, Tarik P.; Garcia, Jose H.; Rocha, Alexandre R.; Rappoport, Tatiana G.

2018-02-01

We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analyzing the spin splitting of the quantum Hall states as a function of magnetic field and gate voltage, we obtain different scaling laws that can be used to characterize the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity.

Microinhomogeneities in Semi-Insulating Cd(Zn)Te

DOE PAGES

Fochuk, P.; Nykoniuk, Y.; Zakharuk, Z.; ...

2017-09-04

Here, we investigated the temperature dependences (TDs) in the range of 290-423 K for the Hall constant R H and the Hall carrier mobility μn (σ R H) in semi-insulating Cd 0.9 Zn 0.1 Te:In (CZT) crystals. As-grown, CZT material has nonequilibrium distributions of native and impurity-related defects. Thus, before taking any measurements, the samples were kept inside the test chamber in the dark at 423 K to reach an equilibrium state at T <; 423 K. For all the tested samples, the R H TD could be described by two activation energies. At the transitional point, the TD ofmore » the carrier mobility also changes from “normal” at high temperatures to “exponential” at low temperatures. The latter is a result of the collective effect of drift barriers due to microinhomogeneity. Therefore, only the high-temperature activation energies can be assigned to the ionization energies of the compensated deep donors (ε D). For different samples, the values for ε D 0 (at absolute zero) were found to be in the range of 0.50-0.78 eV, and the degree of donor compensation [D +]/[D] is between 0.3 and 0.98. The low-temperature region, where there are strong effects of crystal microinhomogeneities, cannot be used to characterize the ionization energy of donors. Therefore, we describe the activation energy as ε 1 = ε D - αε b, where ε b is the drift barrier height found from the TD of the carrier mobility and α takes a value close to unity. Values of ε b for our studied samples lie within (0.05-0.35) eV.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fochuk, P.; Nykoniuk, Y.; Zakharuk, Z.

Here, we investigated the temperature dependences (TDs) in the range of 290-423 K for the Hall constant R H and the Hall carrier mobility μn (σ R H) in semi-insulating Cd 0.9 Zn 0.1 Te:In (CZT) crystals. As-grown, CZT material has nonequilibrium distributions of native and impurity-related defects. Thus, before taking any measurements, the samples were kept inside the test chamber in the dark at 423 K to reach an equilibrium state at T <; 423 K. For all the tested samples, the R H TD could be described by two activation energies. At the transitional point, the TD ofmore » the carrier mobility also changes from “normal” at high temperatures to “exponential” at low temperatures. The latter is a result of the collective effect of drift barriers due to microinhomogeneity. Therefore, only the high-temperature activation energies can be assigned to the ionization energies of the compensated deep donors (ε D). For different samples, the values for ε D 0 (at absolute zero) were found to be in the range of 0.50-0.78 eV, and the degree of donor compensation [D +]/[D] is between 0.3 and 0.98. The low-temperature region, where there are strong effects of crystal microinhomogeneities, cannot be used to characterize the ionization energy of donors. Therefore, we describe the activation energy as ε 1 = ε D - αε b, where ε b is the drift barrier height found from the TD of the carrier mobility and α takes a value close to unity. Values of ε b for our studied samples lie within (0.05-0.35) eV.« less

Intrinsic quantum spin Hall and anomalous Hall effects in h-Sb/Bi epitaxial growth on a ferromagnetic MnO2 thin film.

PubMed

Zhou, Jian; Sun, Qiang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

2016-06-07

Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material.

Faraday Probe Analysis, Part 2: Evaluation of Facility Effects on Ion Migration in a Hall Thruster Plume (Preprint)

DTIC Science & Technology

2010-02-24

A nested Faraday probe was designed and fabricated to assess facility effects in a systematic study of ion migration in a Hall thruster plume...Current density distributions were studied at 8, 12, 16, and 20 thruster diameters downstream of the Hall thruster exit plane with four probe configurations...measurements are a significant improvement for comparisons with numerical simulations and investigations of Hall thruster performance.

Effects of Ionospheric Hall Polarization on Magnetospheric Configurations and Dynamics in Global MHD Simulation

NASA Astrophysics Data System (ADS)

Nakamizo, A.; Yoshikawa, A.; Tanaka, T.

2017-12-01

We investigate how the M-I coupling and boundary conditions affects the results of global simulations of the magnetosphere. More specifically, we examine the effects of ionospheric Hall polarization on magnetospheric convection and dynamics by using an MHD code developed by Tanaka et al. [2010]. This study is motivated by the recently proposed idea that the ionospheric convection is modified by the ionospheric polarization [Yoshikawa et al., 2013]. We perform simulations for the following pairs of Hall conductance and IMF-By; Hall conductance set by αH = 2, 3.5, 5, and uniform distribution (1.0 [S] everywhere), where RH is the ratio of Hall to Pedersen conductance, and IMF-By of positive, negative, and zero. The results are summarized as follows. (a) Large-scale structure: In the cases of uniform Hall conductance, the magnetosphere is completely symmetric under the zero IMF-By. In the cases of non-uniform Hall conductance, the magnetosphere shows asymmetries globally even under the zero IMF-By. Asymmetries become severe for larger αH. The results indicate that ionospheric Hall polarization is one of the important factors to determine the global structure. (b) Formation of NENL: The location becomes closer to the earth and timing becomes earlier for larger RH. The difference is considered to be related to the combined effects of field lines twisting due to ionospheric Hall polarization and M-I energy/current closures. (c) Near-earth convection: In the cases of non-uniform Hall conductance, an inflection structure is formed around premidnight sector on equatorial plane inside 10 RE. Considering that the region 2 FAC is not sufficiently generated in MHD models, the structure corresponds to a convection reversal often shown in the RCM. Previous studies regard the structure as the Harang Reversal in the magnetosphere. In the cases of uniform Hall conductance, by contrast, such structure is not formed, indicating that the Harang Reversal may not be formed without the effect of ionospheric Hall polarization. The above initial research strongly suggests that the ionospheric Hall polarization plays a significant role in the M-I system.

Quantum Hall ferromagnets and transport properties of buckled Dirac materials

NASA Astrophysics Data System (ADS)

Luo, Wenchen; Chakraborty, Tapash

2015-10-01

We study the ground states and low-energy excitations of a generic Dirac material with spin-orbit coupling and a buckling structure in the presence of a magnetic field. The ground states can be classified into three types under different conditions: SU(2), easy-plane, and Ising quantum Hall ferromagnets. For the SU(2) and the easy-plane quantum Hall ferromagnets there are goldstone modes in the collective excitations, while all the modes are gapped in an Ising-type ground state. We compare the Ising quantum Hall ferromagnet with that of bilayer graphene and present the domain-wall solution at finite temperatures. We then specify the phase transitions and transport gaps in silicene in Landau levels 0 and 1. The phase diagram depends strongly on the magnetic field and the dielectric constant. We note that there exist triple points in the phase diagrams in Landau level N =1 that could be observed in experiments.

Observation of a superfluid Hall effect

PubMed Central

Jiménez-García, Karina; Williams, Ross A.; Beeler, Matthew C.; Perry, Abigail R.; Phillips, William D.; Spielman, Ian B.

2012-01-01

Measurement techniques based upon the Hall effect are invaluable tools in condensed-matter physics. When an electric current flows perpendicular to a magnetic field, a Hall voltage develops in the direction transverse to both the current and the field. In semiconductors, this behavior is routinely used to measure the density and charge of the current carriers (electrons in conduction bands or holes in valence bands)—internal properties of the system that are not accessible from measurements of the conventional resistance. For strongly interacting electron systems, whose behavior can be very different from the free electron gas, the Hall effect’s sensitivity to internal properties makes it a powerful tool; indeed, the quantum Hall effects are named after the tool by which they are most distinctly measured instead of the physics from which the phenomena originate. Here we report the first observation of a Hall effect in an ultracold gas of neutral atoms, revealed by measuring a Bose–Einstein condensate’s transport properties perpendicular to a synthetic magnetic field. Our observations in this vortex-free superfluid are in good agreement with hydrodynamic predictions, demonstrating that the system’s global irrotationality influences this superfluid Hall signal. PMID:22699494

Magnetically Orchestrated Formation of Diamond at Lower Temperatures and Pressures

NASA Astrophysics Data System (ADS)

Little, Reginald B.; Lochner, Eric; Goddard, Robert

2005-01-01

Man's curiosity and fascination with diamonds date back to ancient times. The knowledge of the many properties of diamond is recorded during Biblical times. Antoine Lavoisier determined the composition of diamond by burning in O2 to form CO2. With the then existing awareness of graphite as carbon, the race began to convert graphite to diamond. The selective chemical synthesis of diamond has been pursued by Cagniard, Hannay, Moisson and Parson. On the basis of the thermodynamically predicted equilibrium line of diamond and graphite, P W Bridgman attempted extraordinary conditions of high temperature (>2200°C) and pressure (>100,000 atm) for the allotropic conversion of graphite to diamond. H T Hall was the first to successfully form bulk diamond by realizing the kinetic restrictions to Bridgman's (thermodynamic) high pressure high temperature direct allotropic conversion. Moreover, Hall identified catalysts for the faster kinetics of diamond formation. H M Strong determined the import of the liquid catalyst during Hall's catalytic synthesis. W G Eversole discovered the slow metastable low pressure diamond formation by pyrolytic chemical vapor deposition with the molecular hydrogen etching of the rapidly forming stable graphitic carbon. J C Angus determined the import of atomic hydrogen for faster etching for faster diamond growth at low pressure. S Matsumoto has developed plasma and hot filament technology for faster hydrogen and carbon radical generations at low pressure for faster diamond formation. However the metastable low pressure chemical vapor depositions by plasma and hot filament are prone to polycrystalline films. From Bridgman to Hall to Eversole, Angus and Matsumoto, much knowledge has developed of the importance of pressure, temperature, transition metal catalyst, liquid state of metal (metal radicals atoms) and the carbon radical intermediates for diamond synthesis. Here we advance this understanding of diamond formation by demonstrating the external magnetic organization of carbon, metal and hydrogen radicals for lower temperature and pressure synthesis. Here we show that strong static external magnetic field (>15 T) enhances the formation of single crystal diamond at lower pressure and even atmospheric pressure with implications for much better, faster high quality diamond formation by magnetization of current high pressure and temperature technology.

Application of galvanomagnetic measurements in temperature range 70-300 K to MBE GaAs layers characterization

NASA Astrophysics Data System (ADS)

Wolkenberg, Andrzej; Przeslawski, Tomasz

1996-04-01

Galvanomagnetic measurements were performed on the square shaped samples after Van der Pauw and on the Hall bar at low electric fields app. 1.5 V/cm and magnetic induction app. 6 kG in order to make a comparison between the theoretical and experimental results of the temperature dependence of mobility and resistivity from 70 K to 300 K. A calculation method was obtained of the drift mobility and the Hall mobility in which the scatterings are applied: on ionized impurities, on polar optical phonons, on acoustic phonons (deformation potential), on acoustic phonons (piezoelectric potential) and on dislocations. The elaborated method transformed to a computer program allows us to fit experimental values of the resistivity and the Hall mobility to those calculated. The fitting procedure makes it possible to characterize the quality of the n-type GaAs MBE layer, i.e. the net electron concentration, whole ionized impurities concentration and dislocation density after Read space charge cylinders model. The calculations together with the measurements allow us to obtain compensation ratio value in the layer, too. The influence of the epitaxial layer thickness on layers measurements accuracy in the case of Van der Pauw square probe was investigated. It was stated that in the layers under 3 micrometer the bulk properties are strongly influenced by both surfaces. The results of measurements of the same layer using the Van der Pauw and the Hall bar structure were compared. It was stated that the Hall bar structure only could be used to obtain proper measurements results.

Giant topological nontrivial band gaps in chloridized gallium bismuthide.

PubMed

Li, Linyang; Zhang, Xiaoming; Chen, Xin; Zhao, Mingwen

2015-02-11

Quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices but presently is achieved only at extremely low temperature. Searching for the large-gap QSH insulators with strong spin-orbit coupling (SOC) is the key to increase the operating temperature. We demonstrate theoretically that this can be solved in the chloridized gallium bismuthide (GaBiCl2) monolayer, which has nontrivial gaps of 0.95 eV at the Γ point, and 0.65 eV for bulk, as well as gapless edge states in the nanoribbon structures. The nontrivial gaps due to the band inversion and SOC are robust against external strain. The realization of the GaBiCl2 monolayer will be beneficial for achieving QSH effect and related applications at high temperatures.

Combined Influence of Hall Current and Soret Effect on Chemically Reacting Magnetomicropolar Fluid Flow from Radiative Rotating Vertical Surface with Variable Suction in Slip-Flow Regime

PubMed Central

Jain, Preeti

2014-01-01

An analysis study is presented to study the effects of Hall current and Soret effect on unsteady hydromagnetic natural convection of a micropolar fluid in a rotating frame of reference with slip-flow regime. A uniform magnetic field acts perpendicularly to the porous surface which absorbs the micropolar fluid with variable suction velocity. The effects of heat absorption, chemical reaction, and thermal radiation are discussed and for this Rosseland approximation is used to describe the radiative heat flux in energy equation. The entire system rotates with uniform angular velocity Ω about an axis normal to the plate. The nonlinear coupled partial differential equations are solved by perturbation techniques. In order to get physical insight, the numerical results of translational velocity, microrotation, fluid temperature, and species concentration for different physical parameters entering into the analysis are discussed and explained graphically. Also, the results of the skin-friction coefficient, the couple stress coefficient, Nusselt number, and Sherwood number are discussed with the help of figures for various values of flow pertinent flow parameters. PMID:27350957

Enhancing the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As to 200 K via nanostructure engineering.

PubMed

Chen, Lin; Yang, Xiang; Yang, Fuhua; Zhao, Jianhua; Misuraca, Jennifer; Xiong, Peng; von Molnár, Stephan

2011-07-13

We demonstrate by magneto-transport measurements that a Curie temperature as high as 200 K can be obtained in nanostructures of (Ga,Mn)As. Heavily Mn-doped (Ga,Mn)As films were patterned into nanowires and then subject to low-temperature annealing. Resistance and Hall effect measurements demonstrated a consistent increase of T(C) with decreasing wire width down to about 300 nm. This observation is attributed primarily to the increase of the free surface in the narrower wires, which allows the Mn interstitials to diffuse out at the sidewalls, thus enhancing the efficiency of annealing. These results may provide useful information on optimal structures for (Ga,Mn)As-based nanospintronic devices operational at relatively high temperatures.

Room-temperature observation and current control of skyrmions in Pt/Co/Os/Pt thin films

NASA Astrophysics Data System (ADS)

Tolley, R.; Montoya, S. A.; Fullerton, E. E.

2018-04-01

We report the observation of room-temperature magnetic skyrmions in Pt/Co/Os/Pt thin-film heterostructures and their response to electric currents. The magnetic properties are extremely sensitive to inserting thin Os layers between the Co-Pt interface, resulting in reduced saturation magnetization, magnetic anisotropy, and Curie temperature. The observed skyrmions exist in a narrow temperature, applied-field and layer-thickness range near the spin-reorientation transition from perpendicular to in-plane magnetic anisotropy. The skyrmions have an average diameter of 2.3 μ m and transport measurements demonstrate these features can be displaced by means of spin-orbit torques with current densities as low as J =2 ×108A / m2 and display a skyrmion Hall effect.

Giant spin Hall angle from topological insulator BixSe(1 - x) thin films

NASA Astrophysics Data System (ADS)

Dc, Mahendra; Jamali, Mahdi; Chen, Junyang; Hickey, Danielle; Zhang, Delin; Zhao, Zhengyang; Li, Hongshi; Quarterman, Patrick; Lv, Yang; Mkhyon, Andre; Wang, Jian-Ping

Investigation on the spin-orbit torque (SOT) from large spin-orbit coupling materials has been attracting interest because of its low power switching of the magnetization and ultra-fast driving of the domain wall motion that can be used in future spin based memory and logic devices. We investigated SOT from topological insulator BixSe(1 - x) thin film in BixSe(1 - x) /CoFeB heterostructure by using the dc planar Hall method, where BixSe(1 - x) thin films were prepared by a unique industry-compatible deposition process. The angle dependent Hall resistance was measured in the presence of a rotating external in-plane magnetic field at bipolar currents. The spin Hall angle (SHA) from this BixSe(1 - x) thin film was found to be as large as 22.41, which is the largest ever reported at room temperature (RT). The giant SHA and large spin Hall conductivity (SHC) make this BixSe(1 - x) thin film a very strong candidate as an SOT generator in SOT based memory and logic devices.

Spin-Hall magnetoresistance in multidomain helical spiral systems

NASA Astrophysics Data System (ADS)

Aqeel, A.; Mostovoy, M.; van Wees, B. J.; Palstra, T. T. M.

2017-05-01

We study the spin-Hall magnetoresistance (SMR) in multidomain helical spiral magnet Cu2OSeO{{}3}| Pt heterostructures. We compare the SMR response of Cu2OSeO3 at 5 K, when the magnetic domains are almost frozen, to that at elevated temperatures, when domain walls move easily. At 5 K the SMR amplitude vanishes at low applied magnetic fields, while at 50 K it does not. This phenomenon can be explained by the effect of the magnetic field on the domain structure of Cu2OSeO3. At elevated temperatures the system can reach the thermodynamic equilibrium state, in which a single domain that has a minimal energy for a given field direction occupies the whole sample and gives rise to a nonzero SMR signal. In contrast at 5 K, the three types of domains with mutually orthogonal spiral wave vectors have equal volumes independent of the field direction, which leads to the cancellation of the SMR signal at low fields. In the single-domain conical spiral and collinear ferrimagnetic states, the angular and field dependence of the SMR is found to be same at all temperatures (T≤slant 50 K). This behavior can be understood within the framework of the SMR theory developed for collinear magnets.

Clusters of Point Defects Near Dislocations as a Tool to Control CdZnTe Electrical Parameters by Ultrasound

NASA Astrophysics Data System (ADS)

Olikh, Ya. M.; Tymochko, M. D.; Olikh, O. Ya.; Shenderovsky, V. A.

2018-05-01

We studied the temperature dependence (77-300 K) of the electron concentration and mobility using the Hall method under ultrasound (the acoustic Hall method) to determine the mechanisms by which ultrasound influences the electrical activity of near-dislocation clusters in n-type low-ohmic Cd1-x Zn x Te single crystals (N Cl ≈ 1024 m-3; x = 0; 0.04) with different dislocation density (0.4-5.1) × 1010 m-2. Changes in electrophysical parameters were found to occur as a function of temperature and ultrasound intensity. To evaluate the relative contribution of different charge carrier scattering mechanisms (lattice scattering, ionized impurity scattering, neutral impurity scattering, and dislocation scattering) and their change under ultrasound, a differential evolution method was used. This method made it possible to analyze experimental mobility μ H(T) by its nonlinear approximation with characteristic temperature dependence for each mechanism. An increase in neutral impurity scattering and a decrease in ionized impurity and dislocation scattering components were observed under ultrasound. The character and the amount of these acoustically induced changes correlate with particular sample dislocation characteristics. It was concluded that the observed effects are related to the acoustically induced transformation of the point-defect structure, mainly in the near dislocation crystal regions.

Spin Hall Effects in Metallic Antiferromagnets

DOE PAGES

Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun; ...

2014-11-04

In this paper, we investigate four CuAu-I-type metallic antiferromagnets for their potential as spin current detectors using spin pumping and inverse spin Hall effect. Nontrivial spin Hall effects were observed for FeMn, PdMn, and IrMn while a much higher effect was obtained for PtMn. Using thickness-dependent measurements, we determined the spin diffusion lengths of these materials to be short, on the order of 1 nm. The estimated spin Hall angles of the four materials follow the relationship PtMn > IrMn > PdMn > FeMn, highlighting the correlation between the spin-orbit coupling of nonmagnetic species and the magnitude of the spinmore » Hall effect in their antiferromagnetic alloys. These experiments are compared with first-principles calculations. Finally, engineering the properties of the antiferromagnets as well as their interfaces can pave the way for manipulation of the spin dependent transport properties in antiferromagnet-based spintronics.« less

In vitro assessment of temperature change in the pulp chamber during cavity preparation.

PubMed

Oztürk, Bora; Uşümez, Aslihan; Oztürk, A Nilgun; Ozer, Füsun

2004-05-01

Tooth preparation with a high-speed handpiece may cause thermal harm to the dental pulp. This in vitro study evaluated the temperature changes in the pulp chamber during 4 different tooth preparation techniques and the effects of 3 different levels of water cooling. The tip of a thermocouple was positioned in the center of the pulp chamber of 120 extracted Shuman premolar teeth. Four different tooth preparation techniques were compared: (1) Low air pressure plus low load (LA/LL), (2) low air pressure plus high load (LA/HL), (3) high air pressure plus low load (HA/LL), and (4) high air pressure plus high load (HA/HL) in combination with 3 different water cooling rates. Control specimens were not water cooled; low water cooling consisted of 15 mL/min, and high water cooling consisted of 40 mL/min. Twelve different groups were established (n=10). An increase of 5.5 degrees C was regarded as critical value for pulpal health. The results were analyzed with a 3-factor ANOVA and Bonferroni adjusted Mann Whitney U test (alpha=.004). For all techniques without water cooling (LA/LL/0, LA/HL/0, HA/LL/0, and HA/HL/0), the average temperature rise within the pulpal chamber exceeded 5.5 degrees C during cavity preparation (7.1 degrees C; 8.9 degrees C; 11.4 degrees C, and 19.7 degrees C, respectively). When low water cooling was used with high air pressure and high load technique (HA/HL/15), the average temperature rise exceeded 5.5 degrees C limit (5.9 degrees C). However, when high water cooling (LA/LL/40, LA/HL/40, HA/LL/40, and HA/HL/40) was utilized, the critical 5.5 degrees C value was not reached with any air pressure or load (3.1 degrees C, 2.8 degrees C, 2.2 degrees C, and -1.8 degrees C, respectively). Within the limitations of this in vitro study, the results indicate that reducing the amount of water cooling or increasing air pressure and load during cavity preparation increased the temperature of the pulp chamber in extracted teeth.

Nondestructive hall coefficient measurements using ACPD techniques

NASA Astrophysics Data System (ADS)

Velicheti, Dheeraj; Nagy, Peter B.; Hassan, Waled

2018-04-01

Hall coefficient measurements offer great opportunities as well as major challenges for nondestructive materials characterization. The Hall effect is produced by the magnetic Lorentz force acting on moving charge carriers in the presence of an applied magnetic field. The magnetic perturbation gives rise to a Hall current that is normal to the conduction current but does not directly perturb the electric potential distribution. Therefore, Hall coefficient measurements usually exploit the so-called transverse galvanomagnetic potential drop effect that arises when the Hall current is intercepted by the boundaries of the specimen and thereby produce a measurable potential drop. In contrast, no Hall potential is produced in a large plate in the presence of a uniform normal field at quasi-static low frequencies. In other words, conventional Hall coefficient measurements are inherently destructive since they require cutting the material under tests. This study investigated the feasibility of using alternating current potential drop (ACPD) techniques for nondestructive Hall coefficient measurements in plates. Specifically, the directional four-point square-electrode configuration is investigated with superimposed external magnetic field. Two methods are suggested to make Hall coefficient measurements in large plates without destructive machining. At low frequencies, constraining the bias magnetic field can replace constraining the dimensions of the specimen, which is inherently destructive. For example, when a cylindrical permanent magnet is used to provide the bias magnetic field, the peak Hall voltage is produced when the diameter of the magnet is equal to the diagonal of the square ACPD probe. Although this method is less effective than cutting the specimen to a finite size, the loss of sensitivity is less than one order of magnitude even at very low frequencies. In contrast, at sufficiently high inspection frequencies the magnetic field of the Hall current induces a strong enough Hall electric field that produces measurable potential differences between points lying on the path followed by the Hall current even when it is not intercepted by either the edge of the specimen or the edge of the magnetic field. The induced Hall voltage increases proportionally to the square root of frequency as the current is squeezed into a shallow electromagnetic skin of decreasing depth. This approach could be exploited to measure the Hall coefficient near the surface at high frequencies without cutting the specimen.

Hamiltonian theory of gaps, masses, and polarization in quantum Hall states

NASA Astrophysics Data System (ADS)

Shankar, R.

2001-02-01

In two short papers I had described an extension, to all length scales, of the Hamiltonian theory of composite fermions (CF) that Murthy and I developed for the infrared, and applied it to compute finite-temperature quantities for quantum Hall fractions. I furnish details of the extended theory and apply it to Jain fractions ν=p/(2ps+1). The explicit operator description in terms of the CF allows one to answer quantitative and qualitative issues, some of which cannot even be posed otherwise. I compute activation gaps for several potentials, exhibit their particle-hole symmetry, the profiles of charge density in states with a quasiparticle or hole (all in closed form), and compare to results from trial wave functions and exact diagonalization. The Hartree-Fock approximation is used, since much of the nonperturbative physics is built-in at tree level. I compare the gaps to experiment, and comment on the rough equality of normalized masses near half- and quarter-filling. I compute the critical fields at which the Hall system will jump from one quantized value of polarization to another, and the polarization and relaxation rates for half-filling as a function of temperature and propose a Korringa-like law. After providing some plausibility arguments, I explore the possibility of describing several magnetic phenomena in dirty systems with an effective potential, by extracting a free parameter describing the potential from one data point and then using it to predict all the others from that sample. This works to the accuracy typical of this theory (10-20 %). I explain why the CF behaves like a free particle in some magnetic experiments when it is not, what exactly the CF is made of, what one means by its dipole moment, and how the comparison of theory to experiment must be modified to fit the peculiarities of the quantized Hall problem.

Effects of environmental conditions on the ultrafast carrier dynamics in graphene revealed by terahertz spectroscopy

NASA Astrophysics Data System (ADS)

Hafez, H. A.; Chai, X.; Sekine, Y.; Takamura, M.; Oguri, K.; Al-Naib, I.; Dignam, M. M.; Hibino, H.; Ozaki, T.

2017-04-01

A thorough understanding of the stability of graphene under ambient environmental conditions is essential for future graphene-based applications. In this paper, we study the effects of ambient temperature on the properties of monolayer graphene using terahertz time-domain spectroscopy as well as time-resolved terahertz spectroscopy enabled by an optical-pump/terahertz-probe technique. The observations show that graphene is extremely sensitive to the ambient environmental conditions and behaves differently depending on the sample preparation technique and the initial Fermi level. The analysis of the spectroscopic data is supported by van der Pauw and Hall effect measurements of the carrier mobility and carrier density at temperatures comparable to those tested in our THz spectroscopic experiments.

P-type conductivity in annealed strontium titanate

DOE PAGES

Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D.

2015-12-17

In this study, Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO 3, or STO) samples that were annealed at 1200°C. Room temperature mobilities above 100 cm 2/Vs were measured, an order of magnitude higher than those for electrons (5-10 cm 2/Vs). Average hole densities were in the 10 9-10 10 cm -3 range, consistent with a deep acceptor.

Hall effect on a Merging Formation Process of a Field-Reversed Configuration

NASA Astrophysics Data System (ADS)

Kaminou, Yasuhiro; Guo, Xuehan; Inomoto, Michiaki; Ono, Yasushi; Horiuchi, Ritoku

2015-11-01

Counter-helicity spheromak merging is one of the formation methods of a Field-Reversed Configuration (FRC). In counter-helicity spheromak merging, two spheromaks with opposing toroidal fields merge together, through magnetic reconnection events and relax into a FRC, which has no or little toroidal field. This process contains magnetic reconnection and a relaxation phenomena, and the Hall effect has some essential effects on these process because the X-point in the magnetic reconnection or the O-point of the FRC has no or little magnetic field. However, the Hall effect as both global and local effect on counter-helicity spheromak merging has not been elucidated. In this poster, we conducted 2D/3D Hall-MHD simulations and experiments of counter-helicity spheromak merging. We find that the Hall effect enhances the reconnection rate, and reduces the generation of toroidal sheared-flow. The suppression of the ``slingshot effect'' affects the relaxation process. We will discuss details in the poster.

Room Temperature Quantum Spin Hall Insulator in Ethynyl-Derivative Functionalized Stanene Films

PubMed Central

Zhang, Run-wu; Zhang, Chang-wen; Ji, Wei-xiao; Li, Sheng-shi; Yan, Shi-shen; Hu, Shu-jun; Li, Ping; Wang, Pei-ji; Li, Feng

2016-01-01

Quantum spin Hall (QSH) insulators feature edge states that topologically protected from backscattering. However, the major obstacles to application for QSH effect are the lack of suitable QSH insulators with a large bulk gap. Based on first-principles calculations, we predict a class of large-gap QSH insulators in ethynyl-derivative functionalized stanene (SnC2X; X = H, F, Cl, Br, I), allowing for viable applications at room temperature. Noticeably, the SnC2Cl, SnC2Br, and SnC2I are QSH insulators with a bulk gap of ~0.2 eV, while the SnC2H and SnC2F can be transformed into QSH insulator under the tensile strains. A single pair of topologically protected helical edge states is established for the edge of these systems with the Dirac point locating at the bulk gap, and their QSH states are confirmed with topological invariant Z2 = 1. The films on BN substrate also maintain a nontrivial large-gap QSH effect, which harbors a Dirac cone lying within the band gap. These findings may shed new light in future design and fabrication of large-gap QSH insulators based on two-dimensional honeycomb lattices in spintronics. PMID:26728874

Useful Pedagogical Applications of the Classical Hall Effect

ERIC Educational Resources Information Center

Houari, Ahmed

2007-01-01

One of the most known phenomena in physics is the Hall effect. This is mainly due to its simplicity and to the wide range of its theoretical and practical applications. To complete the pedagogical utility of the Hall effect in physics teaching, I will apply it here to determine the Faraday constant as a fundamental physical number and the number…

The quantum Hall effects: Philosophical approach

NASA Astrophysics Data System (ADS)

Lederer, P.

2015-05-01

The Quantum Hall Effects offer a rich variety of theoretical and experimental advances. They provide interesting insights on such topics as gauge invariance, strong interactions in Condensed Matter physics, emergence of new paradigms. This paper focuses on some related philosophical questions. Various brands of positivism or agnosticism are confronted with the physics of the Quantum Hall Effects. Hacking's views on Scientific Realism, Chalmers' on Non-Figurative Realism are discussed. It is argued that the difficulties with those versions of realism may be resolved within a dialectical materialist approach. The latter is argued to provide a rational approach to the phenomena, theory and ontology of the Quantum Hall Effects.

Higher (odd) dimensional quantum Hall effect and extended dimensional hierarchy

NASA Astrophysics Data System (ADS)

Hasebe, Kazuki

2017-07-01

We demonstrate dimensional ladder of higher dimensional quantum Hall effects by exploiting quantum Hall effects on arbitrary odd dimensional spheres. Non-relativistic and relativistic Landau models are analyzed on S 2 k - 1 in the SO (2 k - 1) monopole background. The total sub-band degeneracy of the odd dimensional lowest Landau level is shown to be equal to the winding number from the base-manifold S 2 k - 1 to the one-dimension higher SO (2 k) gauge group. Based on the chiral Hopf maps, we clarify the underlying quantum Nambu geometry for odd dimensional quantum Hall effect and the resulting quantum geometry is naturally embedded also in one-dimension higher quantum geometry. An origin of such dimensional ladder connecting even and odd dimensional quantum Hall effects is illuminated from a viewpoint of the spectral flow of Atiyah-Patodi-Singer index theorem in differential topology. We also present a BF topological field theory as an effective field theory in which membranes with different dimensions undergo non-trivial linking in odd dimensional space. Finally, an extended version of the dimensional hierarchy for higher dimensional quantum Hall liquids is proposed, and its relationship to quantum anomaly and D-brane physics is discussed.

Thermodynamic theory of dislocation-enabled plasticity

DOE PAGES

Langer, J. S.

2017-11-30

The thermodynamic theory of dislocation-enabled plasticity is based on two unconventional hypotheses. The first of these is that a system of dislocations, driven by external forces and irreversibly exchanging heat with its environment, must be characterized by a thermodynamically defined effective temperature that is not the same as the ordinary temperature. The second hypothesis is that the overwhelmingly dominant mechanism controlling plastic deformation is thermally activated depinning of entangled pairs of dislocations. This paper consists of a systematic reformulation of this theory followed by examples of its use in analyses of experimentally observed phenomena including strain hardening, grain-size (Hall-Petch) effects,more » yielding transitions, and adiabatic shear banding.« less

Spin Nernst effect of magnons in collinear antiferromagnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Ran; Okamoto, Satoshi; Xiao, Di

2016-11-15

In a collinear antiferromagnet with easy-axis anisotropy, symmetry guarantees that the spin wave modes are doubly degenerate. The two modes carry opposite spin angular momentum and exhibit opposite chirality. Using a honeycomb antiferromagnet in the presence of the Dzyaloshinskii-Moriya interaction, we show that a longitudinal temperature gradient can drive the two modes to opposite transverse directions, realizing a spin Nernst effect of magnons with vanishing thermal Hall current. We find that magnons around themore » $$\\Gamma$$ point and the $K$ point contribute oppositely to the transverse spin transport, and their competition leads to a sign change of the spin Nernst coefficient at finite temperature. As a result, possible material candidates are discussed.« less

Single molecule magnets from magnetic building blocks

NASA Astrophysics Data System (ADS)

Kroener, W.; Paretzki, A.; Cervetti, C.; Hohloch, S.; Rauschenbach, S.; Kern, K.; Dressel, M.; Bogani, L.; M&üLler, P.

2013-03-01

We provide a basic set of magnetic building blocks that can be rationally assembled, similar to magnetic LEGO bricks, in order to create a huge variety of magnetic behavior. Using rare-earth centers and multipyridine ligands, fine-tuning of intra and intermolecular exchange interaction is demonstrated. We have investigated a series of molecules with monomeric, dimeric and trimeric lanthanide centers using SQUID susceptometry and Hall bar magnetometry. A home-made micro-Hall-probe magnetometer was used to measure magnetic hysteresis loops at mK temperatures and fields up to 17 T. All compounds show hysteresis below blocking temperatures of 3 to 4 K. The correlation of the assembly of the building blocks with the magnetic properties will be discussed.

Framing anomaly in the effective theory of the fractional quantum Hall effect.

PubMed

Gromov, Andrey; Cho, Gil Young; You, Yizhi; Abanov, Alexander G; Fradkin, Eduardo

2015-01-09

We consider the geometric part of the effective action for the fractional quantum Hall effect (FQHE). It is shown that accounting for the framing anomaly of the quantum Chern-Simons theory is essential to obtain the correct gravitational linear response functions. In the lowest order in gradients, the linear response generating functional includes Chern-Simons, Wen-Zee, and gravitational Chern-Simons terms. The latter term has a contribution from the framing anomaly which fixes the value of thermal Hall conductivity and contributes to the Hall viscosity of the FQH states on a sphere. We also discuss the effects of the framing anomaly on linear responses for non-Abelian FQH states.

Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation.

PubMed

Kumar, Ashish; Arafin, Shamsul; Amann, Markus Christian; Singh, Rajendra

2013-11-15

Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes prepared by ultra high vacuum evaporation has been done. Analysis has been made to determine the origin of the anomalous temperature dependence of the Schottky barrier height, the ideality factor, and the Richardson constant calculated from the I-V-T characteristics. Variable-temperature Hall effect measurements have been carried out to understand charge transport at low temperature. The modified activation energy plot from the barrier inhomogeneity model has given the value of 32.2 A/(cm2 K2) for the Richardson constant A** in the temperature range 200 to 380 K which is close to the known value of 26.4A/(cm2 K2) for n-type GaN.

A room temperature ethanol sensor made from p-type Sb-doped SnO2 nanowires.

PubMed

Wu, Jyh Ming

2010-06-11

A p-type ethanol sensor with a response time of approximately 8.3 s at room temperature was produced by SnO(2):Sb nanowires. The electrical properties of p-type SnO(2) nanowires are stable with a hole concentration of 1.544 x 10(17) cm(-3) and a field-effect mobility of 22 cm(2) V(-2) S(-1). X-ray photoelectron spectroscopy (XPS) and Hall measurement revealed that as-synthesized nanowires exhibit p-type behavior. A comprehensive investigation of the p-type sensing mechanism is reported.

Measurement of Xenon Viscosity as a Function of Low Temperature and Pressure

NASA Technical Reports Server (NTRS)

Grisnik, Stanley P.

1998-01-01

The measurement of xenon gas viscosity at low temperatures (175-298 K) and low pressures (350 torr-760 torr) has been performed in support of Hall Thruster testing at NASA Lewis Research Center. The measurements were taken using the capillary flow technique. Viscosity measurements were repeatable to within 3%. The results in this paper are in agreement with data from Hanley and Childs and suggest that the data from Clarke and Smith is approximately 2% low. There are no noticeable pressure effects on xenon absolute viscosity for the pressure range from 350 torr to 760 torr.

SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

NASA Astrophysics Data System (ADS)

Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

2016-05-01

The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering

DOE PAGES

Zhang, Steven S. -L.; Heinonen, Olle

2018-04-02

In this paper, we study the topological Hall (TH) effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin-diffusion equation is derived which contains an additional source term associated with the gradient of the emergent magnetic field that arises from skyrmions. Because of the source term, spin accumulation may build up in the vicinity of the skyrmions. This gives rise to a spin-polarized diffusion current that in general suppresses the bulk TH current. Only when the spin-diffusion length is much smaller than the skyrmion size does themore » TH resistivity approach the value derived by Bruno et al. [Phys. Rev. Lett. 93, 096806 (2004)]. Finally, we derive a general expression of the TH resistivity that applies to thin-film geometries with spin-flip scattering, and show that the corrections to the TH resistivity become large when the size of room temperature skyrmions is further reduced to tens of nanometers.« less

Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Steven S. -L.; Heinonen, Olle

In this paper, we study the topological Hall (TH) effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin-diffusion equation is derived which contains an additional source term associated with the gradient of the emergent magnetic field that arises from skyrmions. Because of the source term, spin accumulation may build up in the vicinity of the skyrmions. This gives rise to a spin-polarized diffusion current that in general suppresses the bulk TH current. Only when the spin-diffusion length is much smaller than the skyrmion size does themore » TH resistivity approach the value derived by Bruno et al. [Phys. Rev. Lett. 93, 096806 (2004)]. Finally, we derive a general expression of the TH resistivity that applies to thin-film geometries with spin-flip scattering, and show that the corrections to the TH resistivity become large when the size of room temperature skyrmions is further reduced to tens of nanometers.« less

Inverse spin Hall effect from pulsed spin current in organic semiconductors with tunable spin-orbit coupling.

PubMed

Sun, Dali; van Schooten, Kipp J; Kavand, Marzieh; Malissa, Hans; Zhang, Chuang; Groesbeck, Matthew; Boehme, Christoph; Valy Vardeny, Z

2016-08-01

Exploration of spin currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates is appealing for potential spintronics applications. Owing to the inherently weak spin-orbit coupling (SOC) of OSECs, their inverse spin Hall effect (ISHE) response is very subtle; limited by the microwave power applicable under continuous-wave (cw) excitation. Here we introduce a novel approach for generating significant ISHE signals in OSECs using pulsed ferromagnetic resonance, where the ISHE is two to three orders of magnitude larger compared to cw excitation. This strong ISHE enables us to investigate a variety of OSECs ranging from π-conjugated polymers with strong SOC that contain intrachain platinum atoms, to weak SOC polymers, to C60 films, where the SOC is predominantly caused by the curvature of the molecule's surface. The pulsed-ISHE technique offers a robust route for efficient injection and detection schemes of spin currents at room temperature, and paves the way for spin orbitronics in plastic materials.

Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering

NASA Astrophysics Data System (ADS)

Zhang, Steven S.-L.; Heinonen, Olle

2018-04-01

We study the topological Hall (TH) effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin-diffusion equation is derived which contains an additional source term associated with the gradient of the emergent magnetic field that arises from skyrmions. Because of the source term, spin accumulation may build up in the vicinity of the skyrmions. This gives rise to a spin-polarized diffusion current that in general suppresses the bulk TH current. Only when the spin-diffusion length is much smaller than the skyrmion size does the TH resistivity approach the value derived by Bruno et al. [Phys. Rev. Lett. 93, 096806 (2004), 10.1103/PhysRevLett.93.096806]. We derive a general expression of the TH resistivity that applies to thin-film geometries with spin-flip scattering, and show that the corrections to the TH resistivity become large when the size of room temperature skyrmions is further reduced to tens of nanometers.

Quantum Effects in Inverse Opal Structures

NASA Astrophysics Data System (ADS)

Bleiweiss, Michael; Datta, Timir; Lungu, Anca; Yin, Ming; Iqbal, Zafar; Palm, Eric; Brandt, Bruce

2002-03-01

Properties of bismuth inverse opals and carbon opal replicas were studied. The bismuth nanostructures were fabricated by pressure infiltration into porous artificial opal, while the carbon opal replicas were created via CVD. These structures form a regular three-dimensional network in which the bismuth and carbon regions percolate in all directions between the close packed spheres of SiO_2. The sizes of the conducting regions are of the order of tens of nanometers. Static susceptibility of the bismuth inverse opal showed clear deHaas-vanAlphen oscillations. Transport measurements, including Hall, were done using standard ac four and six probe techniques in fields up to 17 T* and temperatures between 4.2 and 200 K. Observations of Shubnikov-deHaas oscillations in magnetoresistance, one-dimensional weak localization, quantum Hall and other effects will be discussed. *Performed at the National High Magnetic Field Lab (NHMFL) FSU, Tallahassee, FL. This work was partially supported by grants from DARPA-nanothermoelectrics, NASA-EPSCOR and the USC nanocenter.

Stacked bilayer phosphorene: strain-induced quantum spin Hall state and optical measurement

PubMed Central

Zhang, Tian; Lin, Jia-He; Yu, Yan-Mei; Chen, Xiang-Rong; Liu, Wu-Ming

2015-01-01

Bilayer phosphorene attracted considerable interest, giving a potential application in nanoelectronics owing to its natural bandgap and high carrier mobility. However, very little is known regarding the possible usefulness in spintronics as a quantum spin Hall (QSH) state of material characterized by a bulk energy gap and gapless spin-filtered edge states. Here, we report a strain-induced topological phase transition from normal to QSH state in bilayer phosphorene, accompanied by band-inversion that changes number from 0 to 1, which is highly dependent on interlayer stacking. When the bottom layer is shifted by 1/2 unit-cell along zigzag/armchair direction with respect to the top layer, the maximum topological bandgap 92.5 meV is sufficiently large to realize QSH effect even at room-temperature. An optical measurement of QSH effect is therefore suggested in view of the wide optical absorption spectrum extending to far infra-red, making bilayer phosphorene a promising candidate for opto-spintronic devices. PMID:26370771

Current-driven dynamics of skyrmions stabilized in MnSi nanowires revealed by topological Hall effect

PubMed Central

Liang, Dong; DeGrave, John P.; Stolt, Matthew J.; Tokura, Yoshinori; Jin, Song

2015-01-01

Skyrmions hold promise for next-generation magnetic storage as their nanoscale dimensions may enable high information storage density and their low threshold for current-driven motion may enable ultra-low energy consumption. Skyrmion-hosting nanowires not only serve as a natural platform for magnetic racetrack memory devices but also stabilize skyrmions. Here we use the topological Hall effect (THE) to study phase stability and current-driven dynamics of skyrmions in MnSi nanowires. THE is observed in an extended magnetic field-temperature window (15–30 K), suggesting stabilization of skyrmions in nanowires compared with the bulk. Furthermore, we show in nanowires that under the high current density of 108–109 A m−2, the THE decreases with increasing current densities, which demonstrates the current-driven motion of skyrmions generating the emergent electric field in the extended skyrmion phase region. These results open up the exploration of skyrmions in nanowires for fundamental physics and magnetic storage technologies. PMID:26400204

Understanding and Control of Bipolar Self-Doping in Copper Nitride

PubMed Central

Fioretti, Angela N.; Schwartz, Craig P.; Vinson, John; Nordlund, Dennis; Prendergast, David; Tamboli, Adele C.; Caskey, Christopher M.; Tuomisto, Filip; Linez, Florence; Christensen, Steven T.; Toberer, Eric S.; Lany, Stephan; Zakutayev, Andriy

2016-01-01

Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu3N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu3N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu3N with an electron density of 1017 cm−3 for low growth temperature (≈ 35 °C) and p-type with a hole density between 1015 cm−3 and 1016 cm−3 for elevated growth temperatures (50 °C to 120 °C). Mobility for both types of Cu3N was ≈ 0.1 cm2/Vs to 1 cm2/V. Additionally, temperature-dependent Hall effect measurements indicate that ionized defects are an important scattering mechanism in p-type films. By combining X-ray absorption spectroscopy and first-principles defect theory, we determined that VCu defects form preferentially in p-type Cu3N while Cui defects form preferentially in n-type Cu3N; suggesting that Cu3N is a compensated semiconductor with conductivity type resulting from a balance between donor and acceptor defects. Based on these theoretical and experimental results, we propose a kinetic defect formation mechanism for bipolar doping in Cu3N, that is also supported by positron annihilation experiments. Overall, the results of this work highlight the importance of kinetic processes in the defect physics of metastable materials, and provide a framework that can be applied when considering the properties of such materials in general. PMID:27746508

Understanding and Control of Bipolar Self-Doping in Copper Nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fioretti, Angela N.; Schwartz, Craig P.; Vinson, John

2016-05-14

Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu3N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu3N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu3N with 1017 electrons/cm3 for low growth temperature (approximately 35more » degrees C) and p-type with 1015 holes/cm3-1016 holes/cm3 for elevated growth temperatures (50 degrees C-120 degrees C). Mobility for both types of Cu3N was approximately 0.1 cm2/Vs-1 cm2/Vs. Additionally, temperature-dependent Hall effect measurements indicate that ionized defects are an important scattering mechanism in p-type films. By combining X-ray absorption spectroscopy and first-principles defect theory, we determined that VCu defects form preferentially in p-type Cu3N, while Cui defects form preferentially in n-type Cu3N, suggesting that Cu3N is a compensated semiconductor with conductivity type resulting from a balance between donor and acceptor defects. Based on these theoretical and experimental results, we propose a kinetic defectformation mechanism for bipolar doping in Cu3N that is also supported by positron annihilation experiments. Overall, the results of this work highlight the importance of kinetic processes in the defect physics of metastable materials and provide a framework that can be applied when considering the properties of such materials in general.« less

Pseudo-Hall Effect in Graphite on Paper Based Four Terminal Devices for Stress Sensing Applications

NASA Astrophysics Data System (ADS)

Qamar, Afzaal; Sarwar, Tuba; Dinh, Toan; Foisal, A. R. M.; Phan, Hoang-Phuong; Viet Dao, Dzung

2017-04-01

A cost effective and easy to fabricate stress sensor based on pseudo-Hall effect in Graphite on Paper (GOP) has been presented in this article. The four terminal devices were developed by pencil drawing with hand on to the paper substrate. The stress was applied to the paper containing four terminal devices with the input current applied at two terminals and the offset voltage observed at other two terminals called pseudo-Hall effect. The GOP stress sensor showed significant response to the applied stress which was smooth and linear. These results showed that the pseudo-Hall effect in GOP based four terminal devices can be used for cost effective, flexible and easy to make stress, strain or force sensors.

Influence Of Secondary Electrons Produced From Plasma Material Interaction In Presence Of Crossed Electric And Magnetic Fields

NASA Astrophysics Data System (ADS)

Sawlani, Kapil; Herzog, Joshua M.; Kwak, Joowon; Foster, John

2012-10-01

The electron energy distribution function (EEDF) plays a very important role in determining thruster efficiency as it determines various gas phase reaction rates. In Hall thrusters, secondary electron emission derived from the interaction of energetic electrons with ceramic channel surfaces influence the overall shape of the EEDF as well as determine the potential difference between the plasma and wall. The role of secondary electrons on the discharge operation of Hall thrusters is poorly understood. Experimentally, determining this effect is even more taxing as the secondary electron yield (SEY) varies drastically based on many parameters such as incident electron energies, flux and impact angle, and also on the surface properties such as temperature and roughness. The electron transport is also affected by the profile of the magnetic field, which is not uniform across the length of the accelerating channel. The goal of this work is to map out the variation of the EEDF and potential profile in response to the controlled introduction of secondary electrons. This data is expected to serve as a tool to validate and improve existing numerical models by providing boundary conditions and SEY for various situations that are encountered in Hall thrusters.

Dephasing in a 5/2 quantum Hall Mach-Zehnder interferometer due to the presence of neutral edge modes

NASA Astrophysics Data System (ADS)

Dinaii, Yehuda; Goldstein, Moshe; Gefen, Yuval

Non-Abelian statistics is an intriguing feature predicted to characterize quasiparticles in certain topological phases of matter. This property is both fascinating on the theoretical side and the key ingredient for the implementation of future topological quantum computers. A smoking gun manifestation of non-Abelian statistics consists of demonstrating that braiding of quasiparticles leads to transitions among different states in the relevant degenerate Hilbert manifold. This can be achieved utilizing a Mach-Zehnder interferometer, where Coulomb effects can be neglected, and the electric current is expected to carry clear signatures of non-Abelianity. Here we argue that attempts to measure non-Abelian statistics in the prominent quantum Hall fraction of 5/2 may fail; this can be understood by studying the corresponding edge theory at finite temperatures and bias. We find that the presence of neutral modes imposes stronger limitations on the experimental conditions as compared to quantum Hall states that do not support neutral edge modes. We discuss how to overcome this hindrance. Interestingly, neutral-mode-induced dephasing can be quite different in the Pfaffian state as compared to the anti-Pfaffian state, if the neutral and charge velocities are comparable.

Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

NASA Astrophysics Data System (ADS)

Schopfer, F.; Ribeiro-Palau, R.; Lafont, F.; Brun-Picard, J.; Kazazis, D.; Michon, A.; Cheynis, F.; Couturaud, O.; Consejo, C.; Jouault, B.; Poirier, W.

Large-area and high-quality graphene devices synthesized by CVD on SiC are used to develop reliable electrical resistance standards, based on the quantum Hall effect (QHE), with state-of-the-art accuracy of 1x10-9 and under an extended range of experimental conditions of magnetic field (down to 3.5 T), temperature (up to 10 K) or current (up to 0.5 mA). These conditions are much relaxed as compared to what is required by GaAs/AlGaAs standards and will enable to broaden the use of the primary quantum electrical standards to the benefit of Science and Industry for electrical measurements. Furthermore, by comparison of these graphene devices with GaAs/AlGaAs standards, we demonstrate the universality of the QHE within an ultimate uncertainty of 8.2x10-11. This suggests the exact relation of the quantized Hall resistance with the Planck constant and the electron charge, which is crucial for the new SI to be based on fixing such fundamental constants. These results show that graphene realizes its promises and demonstrates its superiority over other materials for a demanding application. Nature Nanotech. 10, 965-971, 2015, Nature Commun. 6, 6806, 2015

The electrical MHD and Hall current impact on micropolar nanofluid flow between rotating parallel plates

NASA Astrophysics Data System (ADS)

Shah, Zahir; Islam, Saeed; Gul, Taza; Bonyah, Ebenezer; Altaf Khan, Muhammad

2018-06-01

The current research aims to examine the combined effect of magnetic and electric field on micropolar nanofluid between two parallel plates in a rotating system. The nanofluid flow between two parallel plates is taken under the influence of Hall current. The flow of micropolar nanofluid has been assumed in steady state. The rudimentary governing equations have been changed to a set of differential nonlinear and coupled equations using suitable similarity variables. An optimal approach has been used to acquire the solution of the modelled problems. The convergence of the method has been shown numerically. The impact of the Skin friction on velocity profile, Nusslet number on temperature profile and Sherwood number on concentration profile have been studied. The influences of the Hall currents, rotation, Brownian motion and thermophoresis analysis of micropolar nanofluid have been mainly focused in this work. Moreover, for comprehension the physical presentation of the embedded parameters that is, coupling parameter N1 , viscosity parameter Re , spin gradient viscosity parameter N2 , rotating parameter Kr , Micropolar fluid constant N3 , magnetic parameter M , Prandtl number Pr , Thermophoretic parameter Nt , Brownian motion parameter Nb , and Schmidt number Sc have been plotted and deliberated graphically.

Investigation of irradiation effects on highly integrated leading-edge electronic components of diagnostics and control systems for LHD deuterium operation

NASA Astrophysics Data System (ADS)

Ogawa, K.; Nishitani, T.; Isobe, M.; Murata, I.; Hatano, Y.; Matsuyama, S.; Nakanishi, H.; Mukai, K.; Sato, M.; Yokota, M.; Kobuchi, T.; Nishimura, T.; Osakabe, M.

2017-08-01

High-temperature and high-density plasmas are achieved by means of real-time control, fast diagnostic, and high-power heating systems. Those systems are precisely controlled via highly integrated electronic components, but can be seriously affected by radiation damage. Therefore, the effects of irradiation on currently used electronic components should be investigated for the control and measurement of Large Helical Device (LHD) deuterium plasmas. For the precise estimation of the radiation field in the LHD torus hall, the MCNP6 code is used with the cross-section library ENDF B-VI. The geometry is modeled on the computer-aided design. The dose on silicon, which is a major ingredient of electronic components, over nine years of LHD deuterium operation shows that the gamma-ray contribution is dominant. Neutron irradiation tests were performed in the OKTAVIAN at Osaka University and the Fast Neutron Laboratory at Tohoku University. Gamma-ray irradiation tests were performed at the Nagoya University Cobalt-60 irradiation facility. We found that there are ethernet connection failures of programmable logic controller (PLC) modules due to neutron irradiation with a neutron flux of 3  ×  106 cm-2 s-1. This neutron flux is equivalent to that expected at basement level in the LHD torus hall without a neutron shield. Most modules of the PLC are broken around a gamma-ray dose of 100 Gy. This is comparable with the dose in the LHD torus hall over nine years. If we consider the dose only, these components may survive more than nine years. For the safety of the LHD operation, the electronic components in the torus hall have been rearranged.

Direct observation of the skyrmion Hall effect

DOE PAGES

Jiang, Wanjun; Zhang, Xichao; Yu, Guoqiang; ...

2016-09-19

The well-known Hall effect describes the transverse deflection of charged particles (electrons/holes) as a result of the Lorentz force. Similarly, it is intriguing to examine if quasi-particles without an electric charge, but with a topological charge, show related transverse motion. Magnetic skyrmions with a well-defined spin texture with a unit topological charge serve as good candidates to test this hypothesis. In spite of the recent progress made on investigating magnetic skyrmions, direct observation of the skyrmion Hall effect has remained elusive. Here, by using a current-induced spin Hall spin torque, we experimentally demonstrate the skyrmion Hall effect, and the resultantmore » skyrmion accumulation, by driving skyrmions from the creep-motion regime (where their dynamics are influenced by pinning defects) into the steady-flow-motion regime. Lastly, the experimental observation of transverse transport of skyrmions due to topological charge may potentially create many exciting opportunities, such as topological selection.« less

Spin-Hall effect in the scattering of structured light from plasmonic nanowire.

PubMed

Sharma, Deepak K; Kumar, Vijay; Vasista, Adarsh B; Chaubey, Shailendra K; Kumar, G V Pavan

2018-06-01

Spin-orbit interactions are subwavelength phenomena that can potentially lead to numerous device-related applications in nanophotonics. Here, we report the spin-Hall effect in the forward scattering of Hermite-Gaussian (HG) and Gaussian beams from a plasmonic nanowire. Asymmetric scattered radiation distribution was observed for circularly polarized beams. Asymmetry in the scattered radiation distribution changes the sign when the polarization handedness inverts. We found a significant enhancement in the spin-Hall effect for a HG beam compared to a Gaussian beam for constant input power. The difference between scattered powers perpendicular to the long axis of the plasmonic nanowire was used to quantify the enhancement. In addition, the nodal line of the HG beam acts as the marker for the spin-Hall shift. Numerical calculations corroborate experimental observations and suggest that the spin flow component of the Poynting vector associated with the circular polarization is responsible for the spin-Hall effect and its enhancement.

Spin-Hall effect in the scattering of structured light from plasmonic nanowire

NASA Astrophysics Data System (ADS)

Sharma, Deepak K.; Kumar, Vijay; Vasista, Adarsh B.; Chaubey, Shailendra K.; Kumar, G. V. Pavan

2018-06-01

Spin-orbit interactions are subwavelength phenomena which can potentially lead to numerous device related applications in nanophotonics. Here, we report Spin-Hall effect in the forward scattering of Hermite-Gaussian and Gaussian beams from a plasmonic nanowire. Asymmetric scattered radiation distribution was observed for circularly polarized beams. Asymmetry in the scattered radiation distribution changes the sign when the polarization handedness inverts. We found a significant enhancement in the Spin-Hall effect for Hermite-Gaussian beam as compared to Gaussian beam for constant input power. The difference between scattered powers perpendicular to the long axis of the plasmonic nanowire was used to quantify the enhancement. In addition to it, nodal line of HG beam acts as the marker for the Spin-Hall shift. Numerical calculations corroborate experimental observations and suggest that the Spin flow component of Poynting vector associated with the circular polarization is responsible for the Spin-Hall effect and its enhancement.

Direct observation of the skyrmion Hall effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Wanjun; Zhang, Xichao; Yu, Guoqiang

The well-known Hall effect describes the transverse deflection of charged particles (electrons/holes) as a result of the Lorentz force. Similarly, it is intriguing to examine if quasi-particles without an electric charge, but with a topological charge, show related transverse motion. Magnetic skyrmions with a well-defined spin texture with a unit topological charge serve as good candidates to test this hypothesis. In spite of the recent progress made on investigating magnetic skyrmions, direct observation of the skyrmion Hall effect has remained elusive. Here, by using a current-induced spin Hall spin torque, we experimentally demonstrate the skyrmion Hall effect, and the resultantmore » skyrmion accumulation, by driving skyrmions from the creep-motion regime (where their dynamics are influenced by pinning defects) into the steady-flow-motion regime. Lastly, the experimental observation of transverse transport of skyrmions due to topological charge may potentially create many exciting opportunities, such as topological selection.« less

Plasma Potential and Langmuir Probe Measurements in the Near-field Plume of the NASA 300M Hall Thruster

NASA Technical Reports Server (NTRS)

Herman, Daniel A; Shastry, Rohit; Huang, Wensheng; Soulas, George C.; KamHawi, Hani

2012-01-01

In order to aid in the design of high-power Hall thrusters and provide experimental validation for existing modeling efforts, plasma potential and Langmuir probe measurements were performed in the near-field plume of the NASA 300M Hall thruster. A probe array consisting of a Faraday probe, Langmuir probe, and emissive probe was used to interrogate the plume from approximately 0.1 - 2.0 DT,m downstream of the thruster exit plane at four operating conditions: 300 V, 400 V, and 500 V at 20 kW as well as 300 V at 10 kW. Results show that the acceleration zone and high-temperature region were contained within 0.3 DT,m from the exit plane at all operating conditions. Isothermal lines were shown to strongly follow magnetic field lines in the nearfield, with maximum temperatures ranging from 19 - 27 eV. The electron temperature spatial distribution created large drops in measured floating potentials in front of the magnetic pole surfaces where the plasma density was small, which suggests strong sheaths at these surfaces. The data taken have provided valuable information for future design and modeling validation, and complements ongoing internal measurement efforts on the NASA 300 M.

Hall-effect Thruster Channel Surface Properties Investigation (PREPRINT)

DTIC Science & Technology

2011-03-03

Article 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Hall-effect Thruster Channel Surface Properties Investigation 5b...13. SUPPLEMENTARY NOTES For publication in the AIAA Journal of Propulsion and Power. 14. ABSTRACT Surface properties of Hall-effect thruster...incorporated into thruster simulations, and these models must account for evolution of channel surface properties due to thruster operation. Results from

Extrinsic spin Hall effect in graphene

NASA Astrophysics Data System (ADS)

Rappoport, Tatiana

The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

NASA Astrophysics Data System (ADS)

Tong, Wen-Yi; Duan, Chun-Gang

2017-08-01

In analogy to all-electric spintronics, all-electric valleytronics, i.e., valley manipulation via electric means, becomes an exciting new frontier as it may bring revolutions in the field of data storage with ultra-high speed and ultra-low power consumption. The existence of the anomalous valley Hall effect in ferrovalley materials demonstrates the possibility of electrical detection for valley polarization. However, in previously proposed valley-polarized monolayers, the anomalous valley Hall effect is controlled by external magnetic fields. Here, through elaborate structural design, we propose the antiferrovally bilayer as an ideal candidate for realizing all-electric valleytronic devices. Using the minimal k.p model, we show that the energy degeneracy between valley indexes in such system can be lifted by electric approaches. Subsequently, the anomalous valley Hall effect strongly depends on the electric field as well. Taking the bilayer VSe2 as an example, all-electric tuning and detecting of anomalous valley Hall effect is confirmed by density-functional theory calculations, indicating that the valley information in such antiferrovalley bilayer can be reversed by an electric field perpendicular to the plane of the system and easily probed through the sign of the Hall voltage.

Electrical properties of lanthanum chromite based ceramics in hydrogen and oxidizing atmospheres at high temperatures

NASA Astrophysics Data System (ADS)

Schmidt, V. H.

1981-06-01

Several results regarding the effect of hydrogen on lanthanum chromite were determined. Thermally-activated diffusion of hydrogen through La(Mg)CrO3 was found with a high activation energy. It was found that its electrical conductivity drops drastically, especially at low temperature, after exposure to hydrogen at high temperature. Also, the curvature of most of the conductivity plots, as well as the inability to observe the Hall effect, lends support to the proposal by Karim and Aldred that the small-polaron model which predicts thermally activated mobility is applicable to doped lanthanum chromite. From differential thermal analysis, an apparent absorption of hydrogen near 3000 C was noticed. Upon cooling the lanthanum chromite in hydrogen and subsequently reheating it in air, desorption occurred near 1700 C. The immediate purpose of this study was to determine whether hydrogen has a deleterious effect on lanthanum chromite in solid oxide fuel cells.

Star Formation and the Hall Effect

NASA Astrophysics Data System (ADS)

Braiding, Catherine

2011-10-01

Magnetic fields play an important role in star formation by regulating the removal of angular momentum from collapsing molecular cloud cores. Hall diffusion is known to be important to the magnetic field behaviour at many of the intermediate densities and field strengths encountered during the gravitational collapse of molecular cloud cores into protostars, and yet its role in the star formation process is not well-studied. This thesis describes a semianalytic self-similar model of the collapse of rotating isothermal molecular cloud cores with both Hall and ambipolar diffusion, presenting similarity solutions that demonstrate that the Hall effect has a profound influence on the dynamics of collapse. ... Hall diffusion also determines the strength of the magnetic diffusion and centrifugal shocks that bound the pseudo and rotationally-supported discs, and can introduce subshocks that further slow accretion onto the protostar. In cores that are not initially rotating Hall diffusion can even induce rotation, which could give rise to disc formation and resolve the magnetic braking catastrophe. The Hall effect clearly influences the dynamics of gravitational collapse and its role in controlling the magnetic braking and radial diffusion of the field would be worth exploring in future numerical simulations of star formation.

MnSi nanostructures obtained from epitaxially grown thin films: magnetotransport and Hall effect

NASA Astrophysics Data System (ADS)

Schroeter, D.; Steinki, N.; Schilling, M.; Fernández Scarioni, A.; Krzysteczko, P.; Dziomba, T.; Schumacher, H. W.; Menzel, D.; Süllow, S.

2018-06-01

We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, epitaxially grown thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic lattice.

Influence of Triply-Charged Ions and Ionization Cross-Sections in a Hybrid-PIC Model of a Hall Thruster Discharge

NASA Technical Reports Server (NTRS)

Smith, Brandon D.; Boyd, Iain D.; Kamhawi, Hani

2014-01-01

The sensitivity of xenon ionization rates to collision cross-sections is studied within the framework of a hybrid-PIC model of a Hall thruster discharge. A revised curve fit based on the Drawin form is proposed and is shown to better reproduce the measured crosssections at high electron energies, with differences in the integrated rate coefficients being on the order of 10% for electron temperatures between 20 eV and 30 eV. The revised fit is implemented into HPHall and the updated model is used to simulate NASA's HiVHAc EDU2 Hall thruster at discharge voltages of 300, 400, and 500 V. For all three operating points, the revised cross-sections result in an increase in the predicted thrust and anode efficiency, reducing the error relative to experimental performance measurements. Electron temperature and ionization reaction rates are shown to follow the trends expected based on the integrated rate coefficients. The effects of triply-charged xenon are also assessed. The predicted thruster performance is found to have little or no dependence on the presence of triply-charged ions. The fraction of ion current carried by triply-charged ions is found to be on the order of 1% and increases slightly with increasing discharge voltage. The reaction rates for the 0?III, I?III, and II?III ionization reactions are found to be of similar order of magnitude and are about one order of magnitude smaller than the rate of 0?II ionization in the discharge channel.

Spin wave amplification using the spin Hall effect in permalloy/platinum bilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gladii, O.; Henry, Y.; Bailleul, M.

2016-05-16

We investigate the effect of an electrical current on the attenuation length of a 900 nm wavelength spin-wave in a permalloy/Pt bilayer using propagating spin-wave spectroscopy. The modification of the spin-wave relaxation rate is linear in current density, reaching up to 14% for a current density of 2.3 × 10{sup 11} A/m{sup 2} in Pt. This change is attributed to the spin transfer torque induced by the spin Hall effect and corresponds to an effective spin Hall angle of 0.13, which is among the highest values reported so far. The spin Hall effect thus appears as an efficient way of amplifying/attenuating propagating spin waves.

Spray deposition of highly transparent fluorine doped cadmium oxide thin films

NASA Astrophysics Data System (ADS)

Deokate, R. J.; Pawar, S. M.; Moholkar, A. V.; Sawant, V. S.; Pawar, C. A.; Bhosale, C. H.; Rajpure, K. Y.

2008-01-01

The cadmium oxide (CdO) and F:CdO films have been deposited by spray pyrolysis method using cadmium acetate and ammonium fluoride as precursors for Cd and F ions, respectively. The effect of temperature and F doping on the structural, morphological, optical and Hall effect properties of sprayed CdO thin films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), optical absorption and electrical measurement techniques. TGA and DTA studies, indicates the formation of CdO by decomposition of cadmium acetate after 250 °C. XRD patterns reveal that samples are polycrystalline with cubic structure and exhibits (2 0 0) preferential orientation. Considerable broading of (2 0 0) peak, simultaneous shifting of corresponding Bragg's angle have been observed with respect to F doping level. SEM and AFM show the heterogeneous distribution of cubical grains all over the substrate, which are randomly distributed. F doping shifts the optical gap along with the increase in the transparency of CdO films. The Hall effect measurement indicates that the resistivity and mobility decrease up to 4% F doping.

A milliKelvin scanning Hall probe microscope for high resolution magnetic imaging

NASA Astrophysics Data System (ADS)

Khotkevych, V. V.; Bending, S. J.

2009-02-01

The design and performance of a novel scanning Hall probe microscope for milliKelvin magnetic imaging with submicron lateral resolution is presented. The microscope head is housed in the vacuum chamber of a commercial 3He-refrigerator and operates between room temperature and 300 mK in magnetic fields up to 10 T. Mapping of the local magnetic induction at the sample surface is performed by a micro-fabricated 2DEG Hall probe equipped with an integrated STM tip. The latter provides a reliable mechanism of surface tracking by sensing and controlling the tunnel currents. We discuss the results of tests of the system and illustrate its potential with images of suitable reference samples captured in different modes of operation.

Quantum Nonlinear Hall Effect Induced by Berry Curvature Dipole in Time-Reversal Invariant Materials.

PubMed

Sodemann, Inti; Fu, Liang

2015-11-20

It is well known that a nonvanishing Hall conductivity requires broken time-reversal symmetry. However, in this work, we demonstrate that Hall-like currents can occur in second-order response to external electric fields in a wide class of time-reversal invariant and inversion breaking materials, at both zero and twice the driving frequency. This nonlinear Hall effect has a quantum origin arising from the dipole moment of the Berry curvature in momentum space, which generates a net anomalous velocity when the system is in a current-carrying state. The nonlinear Hall coefficient is a rank-two pseudotensor, whose form is determined by point group symmetry. We discus optimal conditions to observe this effect and propose candidate two- and three-dimensional materials, including topological crystalline insulators, transition metal dichalcogenides, and Weyl semimetals.

1000 Hours of Testing Completed on 10-kW Hall Thruster

NASA Technical Reports Server (NTRS)

Mason, Lee S.

2001-01-01

Between the months of April and August 2000, a 10-kW Hall effect thruster, designated T- 220, was subjected to a 1000-hr life test evaluation. Hall effect thrusters are propulsion devices that electrostatically accelerate xenon ions to produce thrust. Hall effect propulsion has been in development for many years, and low-power devices (1.35 kW) have been used in space for satellite orbit maintenance. The T-220, shown in the photo, produces sufficient thrust to enable efficient orbital transfers, saving hundreds of kilograms in propellant over conventional chemical propulsion systems. This test is the longest operation ever achieved on a high-power Hall thruster (greater than 4.5 kW) and is a key milestone leading to the use of this technology for future NASA, commercial, and military missions.

Nulling Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Sullender, Craig C.; Vazquez, Juan M.; Berru, Robert I.

1993-01-01

Circuit measures electrical current via combination of Hall-effect-sensing and magnetic-field-nulling techniques. Known current generated by feedback circuit adjusted until it causes cancellation or near cancellation of magnetic field produced in toroidal ferrite core by current measured. Remaining magnetic field measured by Hall-effect sensor. Circuit puts out analog signal and digital signal proportional to current measured. Accuracy of measurement does not depend on linearity of sensing components.

Hall effect sensors embedded within two-pole toothless stator assembly

NASA Technical Reports Server (NTRS)

Denk, Joseph (Inventor); Grant, Richard J. (Inventor)

1994-01-01

A two-pole toothless PM machine employs Hall effect sensors to indicate the position of the machine's rotor relative to power windings in the machine's stator. The Hall effect sensors are located in the main magnetic air gap underneath the power windings. The main magnetic air gap is defined by an outer magnetic surface of the rotor and an inner surface of the stator's flux collector ring.

Pressure effect in cuprates - manifestation of Le Chatelier's principle

NASA Astrophysics Data System (ADS)

Kallio, A.; Bräysy, V.; Hissa, J.

We show that the pressure dependence of Tc, the Hall coefficient scaling, resistivities etc. can be explained by the chemical equilibrium of bosons and their decay products the fermions applying essentially the classical theory. Above a temperature TBL the bosons form a lattice, which causes diffusion term in τab-1. Treatment of equilibrium in a magnetic field explains the dependence of quantities like the penetration depth λab uponm the field.

Simulations of Hall reconnection in partially ionized plasmas

NASA Astrophysics Data System (ADS)

Innocenti, Maria Elena; Jiang, Wei; Lapenta, Giovanni

2017-04-01

Magnetic reconnection occurs in the Hall, partially ionized regime in environments as diverse as molecular clouds, protostellar disks and regions of the solar chromosphere. While much is known about Hall reconnection in fully ionized plasmas, Hall reconnection in partially ionized plasmas is, in comparison, still relatively unexplored. This notwithstanding the fact that partial ionization is expected to affect fundamental processes in reconnection such as the transition from the slow, fluid to the fast, kinetic regime, the value of the reconnection rate and the dimensions of the diffusion regions [Malyshkin and Zweibel 2011 , Zweibel et al. 2011]. We present here the first, to our knowledge, fully kinetic simulations of Hall reconnection in partially ionized plasmas. The interaction of electrons and ions with the neutral background is realistically modelled via a Monte Carlo plug-in coded into the semi-implicit, fully kinetic code iPic3D [Markidis 2010]. We simulate a plasma with parameters compatible with the MRX experiments illustrated in Zweibel et al. 2011 and Lawrence et al. 2013, to be able to compare our simulation results with actual experiments. The gas and ion temperature is T=3 eV, the ion to electron temperature ratio is Tr=0.44, ion and electron thermal velocities are calculated accordingly resorting to a reduced mass ratio and a reduced value of the speed of light to reduce the computational costs of the simulations. The initial density of the plasma is set at n= 1.1 1014 cm-3 and is then left free to change during the simulation as a result of gas-plasma interaction. A set of simulations with initial ionisation percentage IP= 0.01, 0.1, 0.2, 0.6 is presented and compared with a reference simulation where no background gas is present (full ionization). In this first set of simulations, we assume to be able to externally control the initial relative densities of gas and plasma. Within this parameter range, the ion but not the electron population is heavily affected by collisions with the neutrals. In line with experimental results, we observe reduction of the reconnection rate and no variation of the half-thickness of the ion diffusion region with decreasing IP (increasing gas density). Contrarily to the experiments, we can confidently state that these effects are not influenced by boundary constraints. We then provide an explanation for the behaviour observed.

Crystal Growth and Characterization of CdTe Grown by Vertical Gradient Freeze

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Lehoczky, S. L.; Raghothamachar, B.; Dudley, M.

2007-01-01

In this study, crystals of CdTe were grown from melts by the unseeded vertical gradient freeze method. The quality of grown crystal were studied by various characterization techniques including Synchrotron White Beam X-ray Topography (SWBXT), chemical analysis by glow discharge mass spectroscopy (GDMS), low temperature photoluminescence (PL), and Hall measurements. The SWBXT images from various angles show nearly strain-free grains, grains with inhomogeneous strains, as well as twinning nucleated in the shoulder region of the boule. The GDMS chemical analysis shows the contamination of Ga at a level of 3900 ppb, atomic. The low temperature PL measurement exhibits the characteristic emissions of a Ga-doped sample. The Hall measurements show a resistivity of 1 x l0(exp 7) ohm-cm at room temperature to 3 x 10(exp 9) ohm-cm at 78K with the respective hole and electron concentration of 1.7 x 10(exp 9) cm(exp -3) and 3.9 x 10(exp 7) cm(exp -3) at room temperature.

Investigation on thermal environment improvement by waste heat recovery in the underground station in Qingdao metro

NASA Astrophysics Data System (ADS)

Liu, Jianwei; Liu, Jiaquan; Wang, Fengyin; Wang, Cuiping

2018-03-01

The thermal environment parameters, like the temperature and air velocity, are measured to investigate the heat comfort status of metro staff working area in winter in Qingdao. The temperature is affected obviously by the piston wind from the train and waiting hall in the lower Hall, and the temperature is not satisfied with the least heat comfort temperature of 16 °C. At the same time, the heat produced by the electrical and control equipments is brought by the cooling air to atmosphere for the equipment safety. Utilizing the water-circulating heat pump, it is feasible to transfer the emission heat to the staff working area to improve the thermal environment. Analyzed the feasibility from the technique and economy when using the heat pump, the water-circulating heat pump could be the best way to realize the waste heat recovery and to help the heat comfort of staff working area in winter in the underground metro station in north China.

Linear magneto-resistance in Bi{sub 2}SeTe{sub 2} topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amaladass, E. P., E-mail: edward@igcar.gov.in; Sharma, Shilpam; Devidas, T. R.

2016-05-23

Magnetic field and temperature dependent electronic transport measurements have been carried out on Bi{sub 2}SeTe{sub 2} topological insulator single crystals. The measurements reveal an insulating behavior and the carriers were found to be electrons (n-type) from Hall measurement. Magneto-resistance (MR) measurements in the field range (B) of 15 T to -15 T carried out at 4.2 K showed a cusp like weak anti-localization behavior for lower fields (-5 T 5 T. Upon increasing temperature, MR transforms to linear dependence of B at 40, 50 and 100 K. On further increasing temperatures (> 200 K), a parabolic MR is observed. Temperaturemore » dependent Hall data also showed a transition from a nonlinear to linear behavior upon increasing temperatures. Disorder induced changes in the electronic transport characteristics of bulk and surface electrons are believed to cause such changes in the magneto-transport behavior of this system.« less

Role of ionization and electron drift velocity profile to Rayleigh instability in a Hall thruster plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Sukhmander; Malik, Hitendra K.

Role of ionization to Rayleigh instability is clarified in a Hall thruster plasma under the variety of profiles of electron drift velocity, namely, step-like profile (SLP) and two different super-Gaussian profiles (SGP1 and SGP2). For this, a relevant Rayleigh equation is derived and solved numerically using fourth-order Runge-Kutta method. Interestingly, an upper cutoff frequency of oscillations {omega}{sub max} is realized for the occurrence of the instability that shows dependence on the ionization rate {alpha}, electron drift velocity u{sub 0}, electron cyclotron frequency {Omega}, azimuthal wave number k{sub y}, plasma density n{sub 0}, density gradient {partial_derivative}n{sub 0}/{partial_derivative}x, ion (electron) thermal speedmore » V{sub thI}(V{sub thE}), and ion (electron) plasma frequency {omega}{sub pi}({omega}{sub pe}). The frequency {omega}{sub max} follows the trend {omega}{sub max} (for SGP2) >{omega}{sub max} (for SLP) >{omega}{sub max} (for SGP1) and shows a similar behaviour with ionization for all types of the velocity profiles. The instability is found to grow faster for the higher {alpha} and the ion temperature but it acquires lower rate under the effect of the higher electron temperature; the perturbed potential also varies in accordance with the growth rate. The electron temperature influences the growth rate and cutoff frequency less significantly in comparison with the ion temperature.« less

Characterization of winter airborne particles at Emperor Qin's Terra-cotta Museum, China.

PubMed

Hu, Tafeng; Lee, Shuncheng; Cao, Junji; Chow, Judith C; Watson, John G; Ho, Kinfai; Ho, Wingkei; Rong, Bo; An, Zhisheng

2009-10-01

Daytime and nighttime total suspended particulate matters (TSP) were collected inside and outside Emperor Qin's Terra-cotta Museum, the most popular on-site museum in China, in winter 2008. The purpose of this study was to investigate the contribution of visitors to indoor airborne particles in two display halls with different architectural and ventilating conditions, including Exhibition Hall and Pit No.1. Morphological and elemental analyses of 7-day individual particle samples were performed with scanning electron microscopy and energy dispersive X-ray spectrometer (SEM-EDX). Particle mass concentrations in Exhibition Hall and Pit No.1 were in a range of 54.7-291.7 microg m(-3) and 95.3-285.4 microg m(-3) with maximum diameters of 17.5 microm and 26.0 microm, respectively. In most sampling days, daytime/nighttime particle mass ratios in Exhibition Hall (1.30-3.12) were higher than those in Pit No.1 (0.96-2.59), indicating more contribution of the tourist flow in Exhibition Hall than in Pit No. 1. The maximum of particle size distributions were in a range of 0.5-1.0 microm, with the highest abundance (43.4%) occurred in Exhibition Hall at night. The majority of airborne particles at the Museum was composed of soil dust, S-containing particles, and low-Z particles like soot aggregate and biogenic particles. Both size distributions and particle types were found to be associated with visitor numbers in Exhibition Hall and with natural ventilation in Pit No.1. No significant influence of visitors on indoor temperature and relative humidity (RH) was found in either display halls. Those baseline data on the nature of the airborne particles inside the Museum can be incorporated into the maintenance criteria, display management, and ventilation strategy by conservators of the museum.

Pressure-induced superconductivity in parent CaFeAsF single crystals

NASA Astrophysics Data System (ADS)

Gao, Bo; Ma, Yonghui; Mu, Gang; Xiao, Hong

2018-05-01

Flouroarsenide CaFeAsF is a parent compound of the 1111 type of iron-based superconductors. It is similar to the parent LaFeAsO, but it is oxygen-free. To date, studies of pressure-induced effects have only focused on pure and doped polycrystalline CaFeAsF samples. Here, we carried out high-pressure electrical resistivity and Hall coefficient measurements up to 48.2 GPa on single crystals of CaFeAsF. The structural transition temperature Tstr decreased monotonically upon increasing the pressure, and reached ˜60 K at 9.6 GPa. Superconductivity emerged suddenly at 8.6 GPa with the Tc ,onset˜25.7 K , which decreased monotonically with increasing pressure to 5.7 K under 48.2 GPa. Moreover, just after the appearance of superconductivity, the Hall coefficient at 40 K started to decrease with increasing pressure, while keeping its sign negative persisting up to 48.2 GPa.

Propulsion Instruments for Small Hall Thruster Integration

NASA Technical Reports Server (NTRS)

Johnson, Lee K.; Conroy, David G.; Spanjers, Greg G.; Bromaghim, Daron R.

2001-01-01

Planning and development are underway for the propulsion instrumentation necessary for the next AFRL electric propulsion flight project, which includes both a small Hall thruster and a micro-PPT. These instruments characterize the environment induced by the thruster and the associated data constitute part of a 'user's manual' for these thrusters. Several instruments probe the back-flow region of the thruster plume, and the data are intended for comparison with detailed numerical models in this region. Specifically, an ion probe is under development to determine the energy and species distributions, and a Langmuir probe will be employed to characterize the electron density and temperature. Other instruments directly measure the effects of thruster operation on spacecraft thermal control surfaces, optical surfaces, and solar arrays. Specifically, radiometric, photometric, and solar-cell-based sensors are under development. Prototype test data for most sensors should be available, together with details of the instrumentation subsystem and spacecraft interface.

The upper limit of thermoelectric power factors in the metal-band-insulator crossover of the perovskite-type oxygen deficient system SrTiO(₃- δ/₂).

PubMed

Onoda, Masashige; Tsukahara, Shuichi

2011-02-02

The electronic properties and the thermoelectric power factors in the metal-band-insulator crossover of the perovskite-type oxygen deficient system SrTiO(3 - δ/2) with 0.0046 ≤ δ < 0.06 are explored through measurements of x-ray diffraction, electrical resistivity, thermoelectric power, Hall coefficient and magnetic susceptibility. The metallic transport is confirmed to be basically explained through scattering by electron correlations, acoustic phonons and polar optical phonons, where each scattering coefficient is almost linear in the inverse of the effective carrier concentration estimated from the Hall coefficient. The upper limit of the thermoelectric power factor is 2 × 10( - 3) W m( - 1) K( - 2) with the carrier concentration of 2 × 10(20) cm( - 3) at around the Fermi energy comparable to the Debye temperature.

The upper limit of thermoelectric power factors in the metal-band-insulator crossover of the perovskite-type oxygen deficient system SrTiO3 - δ/2

NASA Astrophysics Data System (ADS)

Onoda, Masashige; Tsukahara, Shuichi

2011-02-01

The electronic properties and the thermoelectric power factors in the metal-band-insulator crossover of the perovskite-type oxygen deficient system SrTiO3 - δ/2 with 0.0046 <= δ < 0.06 are explored through measurements of x-ray diffraction, electrical resistivity, thermoelectric power, Hall coefficient and magnetic susceptibility. The metallic transport is confirmed to be basically explained through scattering by electron correlations, acoustic phonons and polar optical phonons, where each scattering coefficient is almost linear in the inverse of the effective carrier concentration estimated from the Hall coefficient. The upper limit of the thermoelectric power factor is 2 × 10 - 3 W m - 1 K - 2 with the carrier concentration of 2 × 1020 cm - 3 at around the Fermi energy comparable to the Debye temperature.

Unified Hall-Petch description of nano-grain nickel hardness, flow stress and strain rate sensitivity measurements

NASA Astrophysics Data System (ADS)

Armstrong, R. W.; Balasubramanian, N.

2017-08-01

It is shown that: (i) nano-grain nickel flow stress and hardness data at ambient temperature follow a Hall-Petch (H-P) relation over a wide range of grain size; and (ii) accompanying flow stress and strain rate sensitivity measurements follow an analogous H-P relationship for the reciprocal "activation volume", (1/v*) = (1/A*b) where A* is activation area. Higher temperature flow stress measurements show a greater than expected reduction both in the H-P kɛ and in v*. The results are connected with smaller nano-grain size (< ˜20 nm) measurements exhibiting grain size weakening behavior that extends to larger grain size when tested at very low imposed strain rates.

Mission and System Advantages of Iodine Hall Thrusters

NASA Technical Reports Server (NTRS)

Dankanich, John W.; Szabo, James; Pote, Bruce; Oleson, Steve; Kamhawi, Hani

2014-01-01

The exploration of alternative propellants for Hall thrusters continues to be of interest to the community. Investments have been made and continue for the maturation of iodine based Hall thrusters. Iodine testing has shown comparable performance to xenon. However, iodine has a higher storage density and resulting higher ?V capability for volume constrained systems. Iodine's vapor pressure is low enough to permit low-pressure storage, but high enough to minimize potential adverse spacecraft-thruster interactions. The low vapor pressure also means that iodine does not condense inside the thruster at ordinary operating temperatures. Iodine is safe, it stores at sub-atmospheric pressure, and can be stored unregulated for years on end; whether on the ground or on orbit. Iodine fills a niche for both low power (<1kW) and high power (>10kW) electric propulsion regimes. A range of missions have been evaluated for direct comparison of Iodine and Xenon options. The results show advantages of iodine Hall systems for both small and microsatellite application and for very large exploration class missions.

Development of scanning graphene Hall probes for magnetic microscopy

NASA Astrophysics Data System (ADS)

Schaefer, Brian T.; Wang, Lei; McEuen, Paul L.; Nowack, Katja C.

We discuss our progress on developing scanning Hall probes fabricated from hexagonal boron nitride (hBN)-encapsulated graphene, with the goal to image magnetic fields with submicron resolution. In contrast to scanning superconducting quantum interference device (SQUID) microscopy, this technique is compatible with a large applied magnetic field and not limited to cryogenic temperatures. The field sensitivity of a Hall probe depends inversely on carrier density, while the primary source of noise in the measurement is Johnson noise originating from the device resistance. hBN-encapsulated graphene demonstrates high carrier mobility at low carrier densities, therefore making it an ideal material for sensitive Hall probes. Furthermore, engineering the dielectric environment of graphene by encapsulating in hBN reduces low-frequency charge noise and disorder from the substrate. We outline our plans for adapting these devices for scanning, including characterization of the point spread function with a scanned current loop and fabrication of a deep-etched structure that enables positioning the sensitive area within 100 nanometers of the sample surface.

Titanium diboride ceramic fiber composites for Hall-Heroult cells

DOEpatents

Besmann, Theodore M.; Lowden, Richard A.

1990-01-01

An improved cathode structure for Hall-Heroult cells for the electrolytic production of aluminum metal. This cathode structure is a preform fiber base material that is infiltrated with electrically conductive titanium diboride using chemical vapor infiltration techniques. The structure exhibits good fracture toughness, and is sufficiently resistant to attack by molten aluminum. Typically, the base can be made from a mat of high purity silicon carbide fibers. Other ceramic or carbon fibers that do not degrade at temperatures below about 1000 deg. C can be used.

Generation of magnetic skyrmion bubbles by inhomogeneous spin Hall currents

DOE PAGES

Heinonen, Olle; Jiang, Wanjun; Somaily, Hamoud; ...

2016-03-07

Recent experiments have shown that magnetic skyrmion bubbles can be generated and injected at room temperature in thin films. In this study, we demonstrate, using micromagnetic modeling, that such skyrmions can be generated by an inhomogeneous spin Hall torque in the presence of Dzyaloshinskii-Moriya interactions (DMIs). In the experimental Ta-Co 20Fe 60B 20 thin films, the DMI is rather small; nevertheless, the skyrmion bubbles are stable, or at least metastable on observational time scales.

Plasma Perturbations in High-Speed Probing of Hall Thruster Discharge Chambers: Quantification and Mitigation

NASA Technical Reports Server (NTRS)

Jorns, Benjamin A.; Goebel, Dan M.; Hofer, Richard R.

2015-01-01

An experimental investigation is presented to quantify the effect of high-speed probing on the plasma parameters inside the discharge chamber of a 6-kW Hall thruster. Understanding the nature of these perturbations is of significant interest given the importance of accurate plasma measurements for characterizing thruster operation. An array of diagnostics including a high-speed camera and embedded wall probes is employed to examine in real time the changes in electron temperature and plasma potential induced by inserting a high-speed reciprocating Langmuir probe into the discharge chamber. It is found that the perturbations onset when the scanning probe is downstream of the electron temperature peak, and that along channel centerline, the perturbations are best characterized as a downstream shift of plasma parameters by 15-20% the length of the discharge chamber. A parametric study is performed to investigate techniques to mitigate the observed probe perturbations including varying probe speed, probe location, and operating conditions. It is found that the perturbations largely disappear when the thruster is operated at low power and low discharge voltage. The results of this mitigation study are discussed in the context of recommended methods for generating unperturbed measurements of the discharge chamber plasma.

Topological states of matter in two-dimensional fermionic systems

NASA Astrophysics Data System (ADS)

Beugeling, W.

2012-09-01

Topological states of matter in two-dimensional systems are characterised by the different properties of the edges and the bulk of the system: The edges conduct electrical current while the bulk is insulating. The first well-known example is the quantum Hall effect, which is induced by a perpendicular magnetic field that generates chiral edge channels along which the current propagates. Each channel contributes one quantum to the Hall conductivity. Due to the chirality, i.e., all currents propagate in the same direction, backscattering due to impurities is absent, and the Hall conductivity carried by the edge states is therefore protected from perturbations. Another example is the quantum spin Hall effect, induced by intrinsic spin-orbit coupling in absence of a magnetic field. There the edge states are helical, i.e., spin up and down currents propagate oppositely. In this case, the spin Hall conductivity is quantized, and it is protected by time-reversal symmetry from backscattering due to impurities. In Chapter 2 of the thesis, I discuss the combined effect of the magnetic field and intrinsic spin-orbit coupling. In addition, I discuss the influence of the Rashba spin-orbit coupling and of the Zeeman effect. In particular, I show that in absence of magnetic impurities, a weaker form of the quantum spin Hall state persists in the presence of a magnetic field. In addition, I show that the intrinsic spin-orbit coupling and the Zeeman effect act similarly in the low-flux limit. I furthermore analyse the phase transitions induced by intrinsic spin-orbit coupling at a fixed magnetic field, thereby explaining the change of the Hall and spin Hall conductivities at the transition. I also study the subtle interplay between the effects of the different terms in the Hamiltonian. In Chapter 3, I investigate an effective model for HgTe quantum wells doped with Mn ions. Without doping, HgTe quantum wells may exhibit the quantum spin Hall effect, depending on the thickness of the well. The doping with Mn ions modifies the behaviour of the system in two ways: First, the quantum spin Hall gap is reduced in size, and secondly, the system becomes paramagnetic. The latter effect causes a bending of the Landau levels, which is responsible for reentrant behaviour of the (spin) Hall conductivity. I investigate the different types of reentrant behaviour, and I estimate the experimental resolvability of this effect. In Chapter 4, I present a framework to describe the fractional quantum Hall effect in systems with multiple internal degrees of freedom, e.g., spin or pseudospin. This framework describes the so-called flux attachment in terms of a Chern-Simons theory in Hamiltonian form, proposed earlier for systems without internal degrees of freedom. Here, I show a generalization of these results, by replacing the number of attached flux quanta by a matrix. In particular, the plasma analogy proposed by Laughlin still applies, and Kohn’s theorem remains valid. I also show that the results remain valid when the flux-attachment matrix is singular.

Perceived Effectiveness of Hall Director Leadership Style on the Satisfaction of Resident Assistants in Mississippi

ERIC Educational Resources Information Center

Morris, Rheo Joelyn Avorice

2009-01-01

The purpose of this study was to ascertain which leadership style correlates most with RA satisfaction in residence halls at three public universities in Mississippi. When satisfied, RAs will be more efficient in their roles and this will transfer to students residing in the halls. As a result more students in the residence halls will become more…

Theoretical study of the zero-gap organic conductor α-(BEDT-TTF)2I3

PubMed Central

Kobayashi, Akito; Katayama, Shinya; Suzumura, Yoshikazu

2009-01-01

The quasi-two-dimensional molecular conductor α-(BEDT-TTF)2I3 exhibits anomalous transport phenomena where the temperature dependence of resistivity is weak but the ratio of the Hall coefficient at 10 K to that at room temperature is of the order of 104. These puzzling phenomena were solved by predicting massless Dirac fermions, whose motions are described using the tilted Weyl equation with anisotropic velocity. α-(BEDT-TTF)2I3 is a unique material among several materials with Dirac fermions, i.e. graphene, bismuth, and quantum wells such as HgTe, from the view-points of both the structure and electronic states described as follows. α-(BEDT-TTF)2I3 has the layered structure with highly two-dimensional massless Dirac fermions. The anisotropic velocity and incommensurate momenta of the contact points, ±k0, originate from the inequivalency of the BEDT-TTF sites in the unit cell, where ±k0 moves in the first Brillouin zone with increasing pressure. The massless Dirac fermions exist in the presence of the charge disproportionation and are robust against the increase in pressure. The electron densities on those inequivalent BEDT-TTF sites exhibit anomalous momentum distributions, reflecting the angular dependences of the wave functions around the contact points. Those unique electronic properties affect the spatial oscillations of the electron densities in the vicinity of an impurity. A marked behavior of the Hall coefficient, where the sign of the Hall coefficient reverses sharply but continuously at low temperatures around 5 K, is investigated by treating the interband effects of the magnetic field exactly. It is shown that such behavior is possible by assuming the existence of the extremely small amount of electron doping. The enhancement of the orbital diamagnetism is also expected. The results of the present research shed light on a new aspect of Dirac fermion physics, i.e. the emergence of unique electronic properties owing to the structure of the material. PMID:27877282

Effect of growth temperature on the electronic transport and anomalous Hall effect response in co-sputtered Co2FeSi thin films

NASA Astrophysics Data System (ADS)

Yadav, Anjali; Chaudhary, Sujeet

2015-11-01

Co-sputtered Co2FeSi thin films are studied by varying the growth temperature (Ts) as a control parameter in terms of the appreciable change in the disorder. The effect of Ts on structural, magnetic, electrical, and magneto-transport properties was investigated. As Ts is increased from room temperature to 400 °C, an improvement in the crystallinity and atomic ordering are observed. These are found to be correlated with the associated reduction in residual resistivity ( ρ x x 0 ) from 410 to 88 μΩ cm, an increment in residual resistivity ratio (r) from 0.8 to 1.23, and an increase in saturation magnetization from 1074 to 1196 emu/cc. The spin wave stiffness constant in these films is found to increase with Ts, with a reasonably high value of 358 meVÅ2 at the optimum value of Ts of 400 °C. Further, the obtained high carrier concentration and mobility values (at 10 K) of ˜30 e-s/f.u. and ˜0.11 cm2 V-1 s-1 for the films deposited at Ts = 400 °C shows the presence of compensated Fermi surface. The transport properties are investigated qualitatively from the scaling of anomalous Hall resistivity ρx y s (T) with the longitudinal resistivity ρ x x ( T ) data, employing the extrinsic (skew- and side-jump scatterings) and intrinsic scattering contributions. The variation in the intrinsic scattering contributions observed via the variation in linear dependence of ρx y s on ρx x 2 with the change in Ts is found to be associated with the improvement in the crystallinity of these films.

Effects of Hall current and electron temperature anisotropy on proton fire-hose instabilities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hau, L.-N.; Department of Physics, National Central University, Jhongli, Taiwan; Wang, B.-J.

The standard magnetohydrodynamic (MHD) theory predicts that the Alfvén wave may become fire-hose unstable for β{sub ∥}−β{sub ⊥}>2. In this study, we examine the proton fire-hose instability (FHI) based on the gyrotropic two-fluid model, which incorporates the ion inertial effects arising from the Hall current and electron temperature anisotropy but neglects the electron inertia in the generalized Ohm's law. The linear dispersion relation is derived and analyzed which in the long wavelength approximation, λ{sub i}k→0 or α{sub e}=μ{sub 0}(p{sub ∥,e}−p{sub ⊥,e})/B{sup 2}=1, recovers the ideal MHD model with separate temperature for ions and electrons. Here, λ{sub i} is the ionmore » inertial length and k is the wave number. For parallel propagation, both ion cyclotron and whistler waves become propagating and growing for β{sub ∥}−β{sub ⊥}>2+λ{sub i}{sup 2}k{sup 2}(α{sub e}−1){sup 2}/2. For oblique propagation, the necessary condition for FHI remains to be β{sub ∥}−β{sub ⊥}>2 and there exist one or two unstable fire-hose modes, which can be propagating and growing or purely growing. For large λ{sub i}k values, there exists no nearly parallel FHI leaving only oblique FHI and the effect of α{sub e}>1 may greatly enhance the growth rate of parallel and oblique FHI. The magnetic field polarization of FHI may be reversed due to the sign change associated with (α{sub e}−1) and the purely growing FHI may possess linear polarization while the propagating and growing FHI may possess right-handed or left-handed polarization.« less

Exchange and spin-orbit induced phenomena in diluted (Ga,Mn)As from first principles

NASA Astrophysics Data System (ADS)

Kudrnovský, J.; Drchal, V.; Turek, I.

2016-08-01

Physical properties induced by exchange interactions (Curie temperature and spin stiffness) and spin-orbit coupling (anomalous Hall effect, anisotropic magnetoresistance, and Gilbert damping) in the diluted (Ga,Mn)As ferromagnetic semiconductor are studied from first principles. Recently developed Kubo-Bastin transport theory and nonlocal torque operator formulation of the Gilbert damping as formulated in the tight-binding linear muffin-tin orbital method are used. The first-principles Liechtenstein mapping is employed to construct an effective Heisenberg Hamiltonian and to estimate Curie temperature and spin stiffness in the real-space random-phase approximation. Good agreement of calculated physical quantities with experiments on well-annealed samples containing only a small amount of compensating defects is obtained.

Quantum anomalous Hall effect in time-reversal-symmetry breaking topological insulators

NASA Astrophysics Data System (ADS)

Chang, Cui-Zu; Li, Mingda

2016-03-01

The quantum anomalous Hall effect (QAHE), the last member of Hall family, was predicted to exhibit quantized Hall conductivity {σyx}=\\frac{{{e}2}}{h} without any external magnetic field. The QAHE shares a similar physical phenomenon with the integer quantum Hall effect (QHE), whereas its physical origin relies on the intrinsic topological inverted band structure and ferromagnetism. Since the QAHE does not require external energy input in the form of magnetic field, it is believed that this effect has unique potential for applications in future electronic devices with low-power consumption. More recently, the QAHE has been experimentally observed in thin films of the time-reversal symmetry breaking ferromagnetic (FM) topological insulators (TI), Cr- and V- doped (Bi,Sb)2Te3. In this topical review, we review the history of TI based QAHE, the route to the experimental observation of the QAHE in the above two systems, the current status of the research of the QAHE, and finally the prospects for future studies.

Nonlinear dynamics induced anomalous Hall effect in topological insulators

PubMed Central

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2016-01-01

We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics. PMID:26819223

Nonlinear dynamics induced anomalous Hall effect in topological insulators.

PubMed

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2016-01-28

We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics.

Exchange-Dominated Pure Spin Current Transport in Alq3 Molecules.

PubMed

Jiang, S W; Liu, S; Wang, P; Luan, Z Z; Tao, X D; Ding, H F; Wu, D

2015-08-21

We address the controversy over the spin transport mechanism in Alq3 utilizing spin pumping in the Y3Fe5O12/Alq3/Pd system. An unusual angular dependence of the inverse spin Hall effect is found. It, however, disappears when the microwave magnetic field is fully in the sample plane, excluding the presence of the Hanle effect. Together with the quantitative temperature-dependent measurements, these results provide compelling evidence that the pure spin current transport in Alq3 is dominated by the exchange-mediated mechanism.

Additional Ultracool White Dwarfs Found In The Sloan Digital Sky Survey

DTIC Science & Technology

2008-05-20

Anderson,4 Patrick B . Hall,5 Jeffrey A. Munn,1 James Liebert,6 Gillian R. Knapp,7 D. Bizyaev,8 E. Malanushenko,8 V. Malanushenko,8 K . Pan,8 Donald P...ADDITIONAL ULTRACOOL WHITE DWARFS FOUND IN THE SLOAN DIGITAL SKY SURVEY Hugh C. Harris,1 Evalyn Gates,2 Geza Gyuk,2,3 Mark Subbarao ,2,3 Scott F...effective temperature of roughly 4000 K , the density of gas in the photosphere increases to a point where models of the atmosphere must include effects not

High-temperature ferromagnetism in new n-type Fe-doped ferromagnetic semiconductor (In,Fe)Sb

NASA Astrophysics Data System (ADS)

Thanh Tu, Nguyen; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

2018-06-01

Over the past two decades, intensive studies on various ferromagnetic semiconductor (FMS) materials have failed to realize reliable FMSs that have a high Curie temperature (T C > 300 K), good compatibility with semiconductor electronics, and characteristics superior to those of their nonmagnetic host semiconductors. Here, we demonstrate a new n-type Fe-doped narrow-gap III–V FMS, (In1‑ x ,Fe x )Sb. Its T C is unexpectedly high, reaching ∼335 K at a modest Fe concentration (x) of 16%. The anomalous Hall effect and magnetic circular dichroism (MCD) spectroscopy indicate that the high-temperature ferromagnetism in (In,Fe)Sb thin films is intrinsic and originates from the zinc-blende (In,Fe)Sb alloy semiconductor.

Electrical transport properties of single-crystal CaB 6 , SrB 6 , and BaB 6

DOE PAGES

Stankiewicz, Jolanta; Rosa, Priscila F. S.; Schlottmann, Pedro; ...

2016-09-22

We measure the electrical resistivity and Hall effect of alkaline-earth-metal hexaboride single crystals as a function of temperature, hydrostatic pressure, and magnetic field. The transport properties vary weakly with the external parameters and are modeled in terms of intrinsic variable-valence defects. These defects can stay either in (1) delocalized shallow levels or in (2) localized levels resonant with the conduction band, which can be neutral or negatively charged. Satisfactory agreement is obtained for electronic transport properties in a broad temperature and pressure range, though fitting the magnetoresistance is less straightforward and a combination of various mechanisms is needed to explainmore » the field and temperature dependences.« less

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

2016-02-01

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (<3 × 1017 cm-3) responsible for p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

Electrical transport properties of single-crystal CaB 6 , SrB 6 , and BaB 6

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stankiewicz, Jolanta; Rosa, Priscila F. S.; Schlottmann, Pedro

We measure the electrical resistivity and Hall effect of alkaline-earth-metal hexaboride single crystals as a function of temperature, hydrostatic pressure, and magnetic field. The transport properties vary weakly with the external parameters and are modeled in terms of intrinsic variable-valence defects. These defects can stay either in (1) delocalized shallow levels or in (2) localized levels resonant with the conduction band, which can be neutral or negatively charged. Satisfactory agreement is obtained for electronic transport properties in a broad temperature and pressure range, though fitting the magnetoresistance is less straightforward and a combination of various mechanisms is needed to explainmore » the field and temperature dependences.« less

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitchel, W. C., E-mail: William.Mitchel.1@us.af.mil; Haugan, H. J.; Mou, Shin

2015-09-15

Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overallmore » mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.« less

Characterization of n-Type and p-Type Long-Wave InAs/InAsSb Superlattices

NASA Astrophysics Data System (ADS)

Brown, A. E.; Baril, N.; Zuo, D.; Almeida, L. A.; Arias, J.; Bandara, S.

2017-09-01

The influence of dopant concentration on both in-plane mobility and minority carrier lifetime in long-wave infrared InAs/InAsSb superlattices (SLs) was investigated. Unintentially doped ( n-type) and various concentrations of Be-doped ( p-type) SLs were characterized using variable-field Hall and photoconductive decay techniques. Minority carrier lifetimes in p-type InAs/InAsSb SLs are observed to decrease with increasing carrier concentration, with the longest lifetime at 77 K determined to be 437 ns, corresponding to a measured carrier concentration of p 0 = 4.1 × 1015 cm-3. Variable-field Hall technique enabled the extraction of in-plane hole, electron, and surface electron transport properties as a function of temperature. In-plane hole mobility is not observed to change with doping level and increases with reducing temperature, reaching a maximum at the lowest temperature measured of 30 K. An activation energy of the Be-dopant is determined to be 3.5 meV from Arrhenius analysis of hole concentration. Minority carrier electrons populations are suppressed at the highest Be-doping levels, but mobility and concentration values are resolved in lower-doped samples. An average surface electron conductivity of 3.54 × 10-4 S at 30 K is determined from the analysis of p-type samples. Effects of passivation treatments on surface conductivity will be presented.

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

PubMed Central

2014-01-01

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

Comment on "Effects of Magnetic Field Gradient on Ion Beam Current in Cylindrical Hall Ion Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raitses, Y.; Smirnov A.; Fisch, N.J.

It is argued that the key difference of the cylindrical Hall thruster (CHT) as compared to the end-Hall ion source cannot be exclusively attributed to the magnetic field topology [Tang et al. J. Appl. Phys., 102, 123305 (2007)]. With a similar mirror-type topology, the CHT configuration provides the electric field with nearly equipotential magnetic field surfaces and a better suppression of the electron cross-field transport, as compared to both the end-Hall ion source and the cylindrical Hall ion source of Tang et al.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haidar, S. M., E-mail: haidar@imr.tohoku.ac.jp; Iguchi, R.; Yagmur, A.

We have investigated dc voltage generation induced by ferromagnetic resonance in a Co{sub 75}Fe{sub 25}/Pt film. In order to reduce rectification effects of anisotropic magnetoresistance and the planar Hall effect, which may be observed simultaneously with the inverse spin Hall effect, we selected Co{sub 75}Fe{sub 25} with extremely small anisotropic magnetoresistance as a spin injector. Using the difference in the spectral shape of voltage and in the angle dependence of in-plane magnetization among the effects, we demonstrated that the generated dc voltage is governed by the inverse spin Hall effect induced by spin pumping.

Electron transport near the Mott transition in n-GaAs and n-GaN

NASA Astrophysics Data System (ADS)

Romanets, P. N.; Sachenko, A. V.

2016-01-01

In this paper, we study the temperature dependence of the conductivity and the Hall coefficient near the metal-insulator phase transition. A theoretical investigation is performed within the effective mass approximation. The variational method is used to calculate the eigenvalues and eigenfunctions of the impurity states. Unlike previous studies, we have included nonlinear corrections to the screened impurity potential, because the Thomas-Fermi approximation is incorrect for the insulator phase. It is also shown that near the phase transition the exchange interaction is essential. The obtained temperature dependencies explain several experimental measurements in gallium arsenide (GaAs) and gallium nitride (GaN).

The Hall Effect in Hydrided Rare Earth Films

NASA Astrophysics Data System (ADS)

Koon, D. W.; Azofeifa, D. E.; Clark, N.

We describe two new techniques for measuring the Hall effect in capped rare earth films during hydriding. In one, we simultaneously measure resistivity and the Hall coefficient for a rare earth film covered with four different thicknesses of Pd, recovering the charge transport quantities for both materials. In the second technique, we replace Pd with Mn as the covering layer. We will present results from both techniques.

Semiclassical theory of Hall viscosity

NASA Astrophysics Data System (ADS)

Biswas, Rudro

2014-03-01

Hall viscosity is an intriguing stress response in quantum Hall systems and is predicted to be observable via the conductivity in an inhomogeneous electric field. This has been studied extensively using a range of techniques, such as adiabatic transport, effective field theories, and Kubo formulae. All of these are, however, agnostic as to the distinction between strongly correlated quantum Hall states and non-interacting ones, where the effect arises due to the fundamental non-commuting nature of velocities and orbit positions in a magnetic field. In this talk I shall develop the semiclassical theory of quantized cyclotron orbits drifting in an applied inhomogeneous electric field and use it to provide a clear physical picture of how single particle properties in a magnetic field contribute to the Hall viscosity-dependence of the conductivity.

Hall effect on magnetohydrodynamic instabilities at an elliptic magnetic stagnation line

NASA Astrophysics Data System (ADS)

Spies, Günther O.; Faghihi, Mustafa

1987-06-01

To answer the question whether the Hall effect removes the unphysical feature of ideal magnetohydrodynamics of predicting small wavelength kink instabilities at any elliptic magnetic stagnation line, a normal mode analysis is performed of the motion of an incompressible Hall fluid about cylindrical Z-pinch equilibria with circular cross sections. The eigenvalue loci in the complex frequency plane are derived for the equilibrium with constant current density. Every particular mode becomes stable as the Hall parameter exceeds a critical value. This value, however, depends on the mode such that it increases to infinity as the ideal growth rate decreases to zero, implying that there always remains an infinite number of slowly growing instabilities. Correspondingly, the stability criterion for equilibria with arbitrary current distributions is independent of the Hall parameter.

Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices.

PubMed

Neal, Adam T; Mou, Shin; Lopez, Roberto; Li, Jian V; Thomson, Darren B; Chabak, Kelson D; Jessen, Gregg H

2017-10-16

Understanding the origin of unintentional doping in Ga 2 O 3 is key to increasing breakdown voltages of Ga 2 O 3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional doping in Ga 2 O 3 . Previously unobserved unintentional donors in commercially available [Formula: see text] Ga 2 O 3 substrates have been electrically characterized via temperature dependent Hall effect measurements up to 1000 K and found to have a donor energy of 110 meV. The existence of the unintentional donor is confirmed by temperature dependent admittance spectroscopy, with an activation energy of 131 meV determined via that technique, in agreement with Hall effect measurements. With the concentration of this donor determined to be in the mid to high 10 16  cm -3 range, elimination of this donor from the drift layer of Ga 2 O 3 power electronics devices will be key to pushing the limits of device performance. Indeed, analytical assessment of the specific on-resistance (R onsp ) and breakdown voltage of Schottky diodes containing the 110 meV donor indicates that incomplete ionization increases R onsp and decreases breakdown voltage as compared to Ga 2 O 3 Schottky diodes containing only the shallow donor. The reduced performance due to incomplete ionization occurs in addition to the usual tradeoff between R onsp and breakdown voltage.

Dynamics of antiferromagnetic skyrmion driven by the spin Hall effect

NASA Astrophysics Data System (ADS)

Jin, Chendong; Song, Chengkun; Wang, Jianbo; Liu, Qingfang

2016-10-01

Magnetic skyrmion moved by the spin-Hall effect is promising for the application of the generation racetrack memories. However, the Magnus force causes a deflected motion of skyrmion, which limits its application. Here, we create an antiferromagnetic skyrmion by injecting a spin-polarized pulse in the nanostripe and investigate the spin Hall effect-induced motion of antiferromagnetic skyrmion by micromagnetic simulations. In contrast to ferromagnetic skyrmion, we find that the antiferromagnetic skyrmion has three evident advantages: (i) the minimum driving current density of antiferromagnetic skyrmion is about two orders smaller than the ferromagnetic skyrmion; (ii) the velocity of the antiferromagnetic skyrmion is about 57 times larger than the ferromagnetic skyrmion driven by the same value of current density; (iii) antiferromagnetic skyrmion can be driven by the spin Hall effect without the influence of Magnus force. In addition, antiferromagnetic skyrmion can move around the pinning sites due to its property of topological protection. Our results present the understanding of antiferromagnetic skyrmion motion driven by the spin Hall effect and may also contribute to the development of antiferromagnetic skyrmion-based racetrack memories.

Spin valley and giant quantum spin Hall gap of hydrofluorinated bismuth nanosheet.

PubMed

Gao, Heng; Wu, Wei; Hu, Tao; Stroppa, Alessandro; Wang, Xinran; Wang, Baigeng; Miao, Feng; Ren, Wei

2018-05-09

Spin-valley and electronic band topological properties have been extensively explored in quantum material science, yet their coexistence has rarely been realized in stoichiometric two-dimensional (2D) materials. We theoretically predict the quantum spin Hall effect (QSHE) in the hydrofluorinated bismuth (Bi 2 HF) nanosheet where the hydrogen (H) and fluorine (F) atoms are functionalized on opposite sides of bismuth (Bi) atomic monolayer. Such Bi 2 HF nanosheet is found to be a 2D topological insulator with a giant band gap of 0.97 eV which might host room temperature QSHE. The atomistic structure of Bi 2 HF nanosheet is noncentrosymmetric and the spontaneous polarization arises from the hydrofluorinated morphology. The phonon spectrum and ab initio molecular dynamic (AIMD) calculations reveal that the proposed Bi 2 HF nanosheet is dynamically and thermally stable. The inversion symmetry breaking together with spin-orbit coupling (SOC) leads to the coupling between spin and valley in Bi 2 HF nanosheet. The emerging valley-dependent properties and the interplay between intrinsic dipole and SOC are investigated using first-principles calculations combined with an effective Hamiltonian model. The topological invariant of the Bi 2 HF nanosheet is confirmed by using Wilson loop method and the calculated helical metallic edge states are shown to host QSHE. The Bi 2 HF nanosheet is therefore a promising platform to realize room temperature QSHE and valley spintronics.

Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering

NASA Astrophysics Data System (ADS)

Singh, Rohit; Arif Khan, Md; Sharma, Pankaj; Than Htay, Myo; Kranti, Abhinav; Mukherjee, Shaibal

2018-04-01

This work reports on the formation of high-density (~1013-1014 cm-2) two-dimensional electron gas (2DEG) in ZnO-based heterostructures, grown by a dual ion beam sputtering system. We probe 2DEG in bilayer MgZnO/ZnO and capped ZnO/MgZnO/ZnO heterostructures utilizing MgZnO barrier layers with varying thickness and Mg content. The effect of the ZnO cap layer thickness on the ZnO/MgZnO/ZnO heterostructure is also studied. Hall measurements demonstrate that the addition of a 5 nm ZnO cap layer results in an enhancement of the 2DEG density by about 1.5 times compared to 1.11 × 1014 cm-2 for the uncapped bilayer heterostructure with the same 30 nm barrier thickness and 30 at.% Mg composition in the barrier layer. From the low-temperature Hall measurement, the sheet carrier concentration and mobility are both found to be independent of the temperature. The capacitance-voltage measurement suggests a carrier density of ~1020 cm-3, confined in 2DEG at the MgZnO/ZnO heterointerface. The results presented are significant for the optimization of 2DEG for the eventual realization of cost-effective and large-area MgZnO/ZnO-based high-electron-mobility transistors.

Quantum Hall effect in ac driven graphene: From the half-integer to the integer case

NASA Astrophysics Data System (ADS)

Ding, Kai-He; Lim, Lih-King; Su, Gang; Weng, Zheng-Yu

2018-01-01

We theoretically study the quantum Hall effect (QHE) in graphene with an ac electric field. Based on the tight-binding model, the structure of the half-integer Hall plateaus at σxy=±(n +1 /2 ) 4 e2/h (n is an integer) gets qualitatively changed with the addition of new integer Hall plateaus at σxy=±n (4 e2/h ) starting from the edges of the band center regime towards the band center with an increasing ac field. Beyond a critical field strength, a Hall plateau with σxy=0 can be realized at the band center, hence fully restoring a conventional integer QHE with particle-hole symmetry. Within a low-energy Hamiltonian for Dirac cones merging, we show a very good agreement with the tight-binding calculations for the Hall plateau transitions. We also obtain the band structure for driven graphene ribbons to provide a further understanding on the appearance of the new Hall plateaus, showing a trivial insulator behavior for the σxy=0 state. In the presence of disorder, we numerically study the disorder-induced destruction of the quantum Hall states in a finite driven sample and find that qualitative features known in the undriven disordered case are maintained.

The Hall effect in star formation

NASA Astrophysics Data System (ADS)

Braiding, C. R.; Wardle, M.

2012-05-01

Magnetic fields play an important role in star formation by regulating the removal of angular momentum from collapsing molecular cloud cores. Hall diffusion is known to be important to the magnetic field behaviour at many of the intermediate densities and field strengths encountered during the gravitational collapse of molecular cloud cores into protostars, and yet its role in the star formation process is not well studied. We present a semianalytic self-similar model of the collapse of rotating isothermal molecular cloud cores with both Hall and ambipolar diffusion, and similarity solutions that demonstrate the profound influence of the Hall effect on the dynamics of collapse. The solutions show that the size and sign of the Hall parameter can change the size of the protostellar disc by up to an order of magnitude and the protostellar accretion rate by 50 per cent when the ratio of the Hall to ambipolar diffusivities is varied between -0.5 ≤ηH/ηA≤ 0.2. These changes depend upon the orientation of the magnetic field with respect to the axis of rotation and create a preferred handedness to the solutions that could be observed in protostellar cores using next-generation instruments such as ALMA. Hall diffusion also determines the strength and position of the shocks that bound the pseudo and rotationally supported discs, and can introduce subshocks that further slow accretion on to the protostar. In cores that are not initially rotating (not examined here), Hall diffusion can even induce rotation, which could give rise to disc formation and resolve the magnetic braking catastrophe. The Hall effect clearly influences the dynamics of gravitational collapse and its role in controlling the magnetic braking and radial diffusion of the field merits further exploration in numerical simulations of star formation.

Can Hall effect trigger Kelvin-Helmholtz instability in sub-Alfvénic flows?

NASA Astrophysics Data System (ADS)

Pandey, B. P.

2018-05-01

In the Hall magnetohydrodynamics, the onset condition of the Kelvin-Helmholtz instability is solely determined by the Hall effect and is independent of the nature of shear flows. In addition, the physical mechanism behind the super- and sub-Alfvénic flows becoming unstable is quite different: the high-frequency right circularly polarized whistler becomes unstable in the super-Alfvénic flows whereas low-frequency, left circularly polarized ion-cyclotron wave becomes unstable in the presence of sub-Alfvénic shear flows. The growth rate of the Kelvin-Helmholtz instability in the super-Alfvénic case is higher than the corresponding ideal magnetohydrodynamic rate. In the sub-Alfvénic case, the Hall effect opens up a new, hitherto inaccessible (to the magnetohydrodynamics) channel through which the partially or fully ionized fluid can become Kelvin-Helmholtz unstable. The instability growth rate in this case is smaller than the super-Alfvénic case owing to the smaller free shear energy content of the flow. When the Hall term is somewhat smaller than the advection term in the induction equation, the Hall effect is also responsible for the appearance of a new overstable mode whose growth rate is smaller than the purely growing Kelvin-Helmholtz mode. On the other hand, when the Hall diffusion dominates the advection term, the growth rate of the instability depends only on the Alfvén -Mach number and is independent of the Hall diffusion coefficient. Further, the growth rate in this case linearly increases with the Alfvén frequency with smaller slope for sub-Alfvénic flows.

Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire.

PubMed

Hultin, Olof; Otnes, Gaute; Borgström, Magnus T; Björk, Mikael; Samuelson, Lars; Storm, Kristian

2016-01-13

We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping.

Spin Hall effects

NASA Astrophysics Data System (ADS)

Sinova, Jairo; Valenzuela, Sergio O.; Wunderlich, J.; Back, C. H.; Jungwirth, T.

2015-10-01

Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Despite being observed only a decade ago, these effects are already ubiquitous within spintronics, as standard spin-current generators and detectors. Here the theoretical and experimental results that have established this subfield of spintronics are reviewed. The focus is on the results that have converged to give us the current understanding of the phenomena, which has evolved from a qualitative to a more quantitative measurement of spin currents and their associated spin accumulation. Within the experimental framework, optical-, transport-, and magnetization-dynamics-based measurements are reviewed and linked to both phenomenological and microscopic theories of the effect. Within the theoretical framework, the basic mechanisms in both the extrinsic and intrinsic regimes are reviewed, which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. Also reviewed is the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin generation used in many measurements of the spin Hall angle. A further connection to the spin-current-generating spin Hall effect to the inverse spin galvanic effect is given, in which an electrical current induces a nonequilibrium spin polarization. This effect often accompanies the spin Hall effect since they share common microscopic origins. Both can exhibit the same symmetries when present in structures comprising ferromagnetic and nonmagnetic layers through their induced current-driven spin torques or induced voltages. Although a short chronological overview of the evolution of the spin Hall effect field and the resolution of some early controversies is given, the main body of this review is structured from a pedagogical point of view, focusing on well-established and accepted physics. In such a young field, there remains much to be understood and explored, hence some of the future challenges and opportunities of this rapidly evolving area of spintronics are outlined.

Precision Tests of a Quantum Hall Effect Device DC Equivalent Circuit Using Double-Series and Triple-Series Connections

PubMed Central

Jeffery, A.; Elmquist, R. E.; Cage, M. E.

1995-01-01

Precision tests verify the dc equivalent circuit used by Ricketts and Kemeny to describe a quantum Hall effect device in terms of electrical circuit elements. The tests employ the use of cryogenic current comparators and the double-series and triple-series connection techniques of Delahaye. Verification of the dc equivalent circuit in double-series and triple-series connections is a necessary step in developing the ac quantum Hall effect as an intrinsic standard of resistance. PMID:29151768

A silicon nanowire heater and thermometer

NASA Astrophysics Data System (ADS)

Zhao, Xingyan; Dan, Yaping

2017-07-01

In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.

Electronic transport and photovoltaic properties in Bi2Sr2Co2Oyepitaxial heterostructures

NASA Astrophysics Data System (ADS)

Guo, Hai-Zhong; Gu, Lin; Yang, Zhen-Zhong; Wang, Shu-Fang; Fu, Guang-Sheng; Wang, Le; Jin, Kui-Juan; Lu, Hui-Bin; Wang, Can; Ge, Chen; He, Meng; Yang, Guo-Zhen

2013-08-01

Epitaxial heterostructures constructed from the thermoelectric cobalt Bi2Sr2Co2Oy thin films and SrTiO3 as well as SrTi0.993Nb0.007O3 substrates were fabricated by pulsed-laser deposition. The scanning transmission electron microscopy results confirm that the heterostructures are epitaxial, with sharp and coherent interfaces. The temperature-dependent electrical transport properties and the Hall effects were systematically investigated. The Bi2Sr2Co2Oy/SrTi0.993Nb0.007O3 p-n heterostructure exhibits good rectifying current-voltage characteristics over a wide temperature range. A strong photovoltaic effect was observed in the Bi2Sr2Co2Oy/SrTi0.993Nb0.007O3 heterostructure, with the temperature-dependent photovoltage being systematically investigated. The present work shows a great potential of this new heterostructures as photoelectric devices.

Cross-field diffusion in Hall thrusters and other plasma thrusters

NASA Astrophysics Data System (ADS)

Boeuf, J. P.

2012-10-01

Understanding and quantifying electron transport perpendicular to the magnetic field is a challenge in many low temperature plasma applications. Hall effect thrusters (HETs) provide an excellent example of cross-field transport. The HET is a very successful concept that can be considered both as a gridless ion source and an electromagnetic thruster. In HETs, the electric field E accelerating the ions is a consequence of the Lorentz force due to an external magnetic field B acting on the ExB Hall electron current. An essential aspect of HETs is that the ExB drift is closed, i.e. is in the azimuthal direction of a cylindrical channel. In the first part of this presentation we will discuss the physics of cross-field electron transport in HETs, and the current understanding (or non-understanding) of the possible role of turbulence and wall collisions on cross-field diffusion. We will also briefly comment on alternative designs of ion sources based on the same principles as the conventional HET (Anode Layer Thruster, Diverging Cusp Field Thrusters, End-Hall ion sources). In a second part of the presentation we show that the Lorentz force acting on diamagnetic currents (associated with the ∇PexB term in the electron momentum equation) can also provide thrust. This is the case for example in helicon thrusters where the plasma expands in a magnetic nozzle. We will report and discuss recent work on helicon thrusters and other devices where the diamagnetic current is dominant (with some examples where the ∇PexB current is not closed and is directed toward a wall!).

Real-space imaging of fractional quantum Hall liquids

NASA Astrophysics Data System (ADS)

Hayakawa, Junichiro; Muraki, Koji; Yusa, Go

2013-01-01

Electrons in semiconductors usually behave like a gas--as independent particles. However, when confined to two dimensions under a perpendicular magnetic field at low temperatures, they condense into an incompressible quantum liquid. This phenomenon, known as the fractional quantum Hall (FQH) effect, is a quantum-mechanical manifestation of the macroscopic behaviour of correlated electrons that arises when the Landau-level filling factor is a rational fraction. However, the diverse microscopic interactions responsible for its emergence have been hidden by its universality and macroscopic nature. Here, we report real-space imaging of FQH liquids, achieved with polarization-sensitive scanning optical microscopy using trions (charged excitons) as a local probe for electron spin polarization. When the FQH ground state is spin-polarized, the triplet/singlet intensity map exhibits a spatial pattern that mirrors the intrinsic disorder potential, which is interpreted as a mapping of compressible and incompressible electron liquids. In contrast, when FQH ground states with different spin polarization coexist, domain structures with spontaneous quasi-long-range order emerge, which can be reproduced remarkably well from the disorder patterns using a two-dimensional random-field Ising model. Our results constitute the first reported real-space observation of quantum liquids in a class of broken symmetry state known as the quantum Hall ferromagnet.

Chiral pair of Fermi arcs, anomaly cancellation, and spin or valley Hall effects in Weyl metals with broken inversion symmetry

NASA Astrophysics Data System (ADS)

Jang, Iksu; Kim, Ki-Seok

2018-04-01

Anomaly cancellation has been shown to occur in broken time-reversal symmetry Weyl metals, which explains the existence of a Fermi arc. We extend this result in the case of broken inversion symmetry Weyl metals. Constructing a minimal model that takes a double pair of Weyl points, we demonstrate the anomaly cancellation explicitly. This demonstration explains why a chiral pair of Fermi arcs appear in broken inversion symmetry Weyl metals. In particular, we find that this pair of Fermi arcs gives rise to either "quantized" spin Hall or valley Hall effects, which corresponds to the "quantized" version of the charge Hall effect in broken time-reversal symmetry Weyl metals.

Spin Hall magnetoresistance in CoFe 2O 4/Pt films

DOE PAGES

Wu, Hao; Qintong, Zhang; Caihua, Wan; ...

2015-05-13

Pulse laser deposition and magnetron sputtering techniques have been employed to prepare MgO(001)//CoFe 2O 4/Pt samples. Cross section transmission electron microscope results prove that the CoFe 2O 4 film epitaxially grew along (001) direction. X-ray magnetic circular dichroism results show that magnetic proximity effect in this sample is negligible. Magnetoresistance (MR) properties confirm that spin Hall MR (SMR) dominates in this system. Spin Hall effect-induced anomalous Hall voltage was also observed in this sample. Lastly, these results not only demonstrate the universality of SMR effect but also demonstrate the utility in spintronics of CoFe 2O 4 as a new typemore » of magnetic insulator.« less

Influence of the magnetic field configuration on the plasma flow in Hall thrusters

NASA Astrophysics Data System (ADS)

Andreussi, T.; Giannetti, V.; Leporini, A.; Saravia, M. M.; Andrenucci, M.

2018-01-01

In Hall propulsion, the thrust is provided by the acceleration of ions in a plasma generated in a cross-field configuration. Standard thruster configurations have annular channels with an almost radial magnetic field at the channel exit. A potential difference is imposed in the axial direction and the intensity of the magnetic field is calibrated in order to hinder the electron motion, while leaving the ions non-magnetised. Magnetic field lines can be assumed, as a first approximation, as lines of constant electron temperature and of thermalized potential. In typical thruster configurations, the discharge occurs inside a ceramic channel and, due to plasma-wall interactions, the electron temperature is typically low, less than few tens of eV. Hence, the magnetic field lines can be effectively used to tailor the distribution of the electrostatic potential. However, the erosion of the ceramic walls caused by the ion bombardment represents the main limiting factor of the thruster lifetime and new thruster configurations are currently under development. For these configurations, classical first order models of the plasma dynamics fail to grasp the influence of the magnetic topology on the plasma flow. In the present paper, a novel approach to investigate the correlation between magnetic field topology and thruster performance is presented. Due to the anisotropy induced by the magnetic field, the gradients of the plasma properties are assumed to be mainly in the direction orthogonal to the local magnetic field, thus enabling a quasi-one-dimensional description in magnetic coordinates. Theoretical and experimental investigations performed on a 5 kW class Hall thruster with different magnetic field configurations are then presented and discussed.

Effects of Hall current and electrical resistivity on the stability of gravitating anisotropic quantum plasma

NASA Astrophysics Data System (ADS)

Bhakta, S.; Prajapati, R. P.

2018-02-01

The effects of Hall current and finite electrical resistivity are studied on the stability of uniformly rotating and self-gravitating anisotropic quantum plasma. The generalized Ohm's law modified by Hall current and electrical resistivity is used along with the quantum magnetohydrodynamic fluid equations. The general dispersion relation is derived using normal mode analysis and discussed in the parallel and perpendicular propagations. In the parallel propagation, the Jeans instability criterion, expression of critical Jeans wavenumber, and Jeans length are found to be independent of non-ideal effects and uniform rotation but in perpendicular propagation only rotation affects the Jeans instability criterion. The unstable gravitating mode modified by Bohm potential and the stable Alfven mode modified by non-ideal effects are obtained separately. The criterion of firehose instability remains unaffected due to the presence of non-ideal effects. In the perpendicular propagation, finite electrical resistivity and quantum pressure anisotropy modify the dispersion relation, whereas no effect of Hall current was observed in the dispersion characteristics. The Hall current, finite electrical resistivity, rotation, and quantum corrections stabilize the growth rate. The stability of the dynamical system is analyzed using the Routh-Hurwitz criterion.

Effect of capping layer on spin-orbit torques

NASA Astrophysics Data System (ADS)

Sun, Chi; Siu, Zhuo Bin; Tan, Seng Ghee; Yang, Hyunsoo; Jalil, Mansoor B. A.

2018-04-01

In order to enhance the magnitude of spin-orbit torque (SOT), considerable experimental works have been devoted to studying the thickness dependence of the different layers in multilayers consisting of heavy metal (HM), ferromagnet (FM), and capping layers. Here, we present a theoretical model based on the spin-drift-diffusion formalism to investigate the effect of the capping layer properties such as its thickness on the SOT observed in experiments. It is found that the spin Hall-induced SOT can be significantly enhanced by incorporating a capping layer with an opposite spin Hall angle to that of the HM layer. The spin Hall torque can be maximized by tuning the capping layer thickness. However, in the absence of the spin Hall effect (SHE) in the capping layer, the torque decreases monotonically with the capping layer thickness. Conversely, the spin Hall torque is found to decrease monotonically with the FM layer thickness, irrespective of the presence or absence of the SHE in the capping layer. All these trends are in correspondence with experimental observations. Finally, our model suggests that capping layers with a long spin diffusion length and high resistivity would also enhance the spin Hall torque.

Exploring 4D quantum Hall physics with a 2D topological charge pump

NASA Astrophysics Data System (ADS)

Lohse, Michael; Schweizer, Christian; Price, Hannah M.; Zilberberg, Oded; Bloch, Immanuel

2018-01-01

The discovery of topological states of matter has greatly improved our understanding of phase transitions in physical systems. Instead of being described by local order parameters, topological phases are described by global topological invariants and are therefore robust against perturbations. A prominent example is the two-dimensional (2D) integer quantum Hall effect: it is characterized by the first Chern number, which manifests in the quantized Hall response that is induced by an external electric field. Generalizing the quantum Hall effect to four-dimensional (4D) systems leads to the appearance of an additional quantized Hall response, but one that is nonlinear and described by a 4D topological invariant—the second Chern number. Here we report the observation of a bulk response with intrinsic 4D topology and demonstrate its quantization by measuring the associated second Chern number. By implementing a 2D topological charge pump using ultracold bosonic atoms in an angled optical superlattice, we realize a dynamical version of the 4D integer quantum Hall effect. Using a small cloud of atoms as a local probe, we fully characterize the nonlinear response of the system via in situ imaging and site-resolved band mapping. Our findings pave the way to experimentally probing higher-dimensional quantum Hall systems, in which additional strongly correlated topological phases, exotic collective excitations and boundary phenomena such as isolated Weyl fermions are predicted.

Exploring 4D quantum Hall physics with a 2D topological charge pump.

PubMed

Lohse, Michael; Schweizer, Christian; Price, Hannah M; Zilberberg, Oded; Bloch, Immanuel

2018-01-03

The discovery of topological states of matter has greatly improved our understanding of phase transitions in physical systems. Instead of being described by local order parameters, topological phases are described by global topological invariants and are therefore robust against perturbations. A prominent example is the two-dimensional (2D) integer quantum Hall effect: it is characterized by the first Chern number, which manifests in the quantized Hall response that is induced by an external electric field. Generalizing the quantum Hall effect to four-dimensional (4D) systems leads to the appearance of an additional quantized Hall response, but one that is nonlinear and described by a 4D topological invariant-the second Chern number. Here we report the observation of a bulk response with intrinsic 4D topology and demonstrate its quantization by measuring the associated second Chern number. By implementing a 2D topological charge pump using ultracold bosonic atoms in an angled optical superlattice, we realize a dynamical version of the 4D integer quantum Hall effect. Using a small cloud of atoms as a local probe, we fully characterize the nonlinear response of the system via in situ imaging and site-resolved band mapping. Our findings pave the way to experimentally probing higher-dimensional quantum Hall systems, in which additional strongly correlated topological phases, exotic collective excitations and boundary phenomena such as isolated Weyl fermions are predicted.

A holographic model for the fractional quantum Hall effect

NASA Astrophysics Data System (ADS)

Lippert, Matthew; Meyer, René; Taliotis, Anastasios

2015-01-01

Experimental data for fractional quantum Hall systems can to a large extent be explained by assuming the existence of a Γ0(2) modular symmetry group commuting with the renormalization group flow and hence mapping different phases of two-dimensional electron gases into each other. Based on this insight, we construct a phenomenological holographic model which captures many features of the fractional quantum Hall effect. Using an -invariant Einstein-Maxwell-axio-dilaton theory capturing the important modular transformation properties of quantum Hall physics, we find dyonic diatonic black hole solutions which are gapped and have a Hall conductivity equal to the filling fraction, as expected for quantum Hall states. We also provide several technical results on the general behavior of the gauge field fluctuations around these dyonic dilatonic black hole solutions: we specify a sufficient criterion for IR normalizability of the fluctuations, demonstrate the preservation of the gap under the action, and prove that the singularity of the fluctuation problem in the presence of a magnetic field is an accessory singularity. We finish with a preliminary investigation of the possible IR scaling solutions of our model and some speculations on how they could be important for the observed universality of quantum Hall transitions.

Enhanced spin Hall ratios by Al and Hf impurities in Pt thin films

NASA Astrophysics Data System (ADS)

Nguyen, Minh-Hai; Zhao, Mengnan; Ralph, Daniel C.; Buhrman, Robert A.

The spin Hall effect (SHE) in Pt has been reported to be strong and hence promising for spintronic applications. In the intrinsic SHE mechanism, which has been shown to be dominant in Pt, the spin Hall conductivity σSH is constant, dependent only on the band structure of the spin Hall material. The spin Hall ratio θSH =σSH . ρ , on the other hand, should be proportional to the electrical resistivity ρ of the spin Hall layer. This suggests the possibility of enhancing the spin Hall ratio by introducing additional diffusive scattering to increase the electrical resistivity of the spin Hall layer. Our previous work has shown that this could be done by increasing the surface scattering by growing thinner Pt films in contact with higher resistivity materials such as Ta. In this talk, we discuss another approach: to introduce impurities of metals with negligible spin orbit torque into the Pt film. Our PtAl and PtHf alloy samples exhibit strong enhancement of the spin Hall torque efficiency with impurity concentration due to increased electrical resistivity. Supported in part by Samsung Electronics.