Electrical Properties of Materials for Elevated Temperature Resistance Strain Gage Application. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Lei, Jih-Fen

1987-01-01

The objective was to study the electrical resistances of materials that are potentially useful as resistance strain gages at 1000 C. Transition metal carbides and nitrides, boron carbide and silicon carbide were selected for the experimental phase of this research. Due to their low temperature coefficient of resistance and good stability, TiC, ZrC, B sub 4 C and beta-SiC are suggested as good candidates for high temperature resistance strain gage applications.

In-situ measurement system

DOEpatents

Lord, David E.

1983-01-01

A multipurpose in situ underground measurement system comprising a plurality of long electrical resistance elements in the form of rigid reinforcing bars, each having an open loop "hairpin" configuration of shorter length than the other resistance elements. The resistance elements are arranged in pairs in a unitized structure, and grouted in place in the underground volume. The electrical resistance of each element and the difference in electrical resistance of the paired elements are obtained, which difference values may be used in analytical methods involving resistance as a function of temperature. A scanner sequentially connects the resistance-measuring apparatus to each individual pair of elements. A source of heating current is also selectively connectable for heating the elements to an initial predetermined temperature prior to electrical resistance measurements when used as an anemometer.

Electrical properties of granite with implications for the lower crust.

USGS Publications Warehouse

Olhoeft, G.R.

1981-01-01

The electrical properties of granite appear to be dominantly controlled by the amount of free water in the granite and by temperature. Minor contributions to the electrical properties are provided by hydrostatic and lithostatic pressure, structurally bound water, oxygen fugacity, and other parameters. The effect of sulphur fugacity may be important but is experimentally unconfirmed. In addition to changing the magnitude of electrical properties, the amount and chemistry of water in granite significantly changes the temperature dependence of the electrical properties. With increasing temperature, changes in water content retain large, but lessened, effects on electrical properties. Near room temperature, a monolayer of water will decrease the electrical resistivity by an order of magnitude. Several weight-percent water may decrease the electrical resistivity by as much as nine orders of magnitude and decrease the thermal activation energy by a factor of five. At elevated temperatures just below granitic melting, a few weight-percent water may still decrease the resistivity by as much as 3 orders of magnitude and the activation energy by a factor of two.-Author

Low-temperature electrical resistivity of transition-metal carbides

NASA Astrophysics Data System (ADS)

Allison, C. Y.; Finch, C. B.; Foegelle, M. D.; Modine, F. A.

1988-10-01

The electrical resistivities of single crystals of ZrC 0.93, VC 0.88, NbC 0.95, and TaC 0.99 were measured from liquid helium temperature to 350 K. The Bloch-Gruneisen theory of electrical resistivity gives a good fit to the zirconium carbide and the vanadium carbide measurements. In contrast, the resistivities of the two superconducting crystals, tantalum carbide and niobium carbide, show excellent agreement with the Wilson model. The appropriate model appears to depend upon the superconducting properties of the crystals.

Electrical conduction hysteresis in carbon black-filled butyl rubber compounds

NASA Astrophysics Data System (ADS)

Alzamil, M. A.; Alfaramawi, K.; Abboudy, S.; Abulnasr, L.

2018-04-01

Temperature and concentration dependence of electrical resistance of butyl rubber filled with GPF carbon black was carried out. Current-voltage (I-V) characteristics at room-temperature were also investigated. The I-V characteristics show that the behavior is linear at small voltages up to approximately 0.15 V and currents up to 0.05 mA indicating that the conduction mechanism was probably due to electron tunneling from the end of conductive path to the other one under the action of the applied electric field. At higher voltages, a nonlinear behavior was noticed. The nonlinearity was attributed to the joule heating effects. Electrical resistance of the butyl/GPF composites was measured as a function of temperature during heating and cooling cycles from 300 K and upward to a specific temperature. When the specimens were heated up, the resistance was observed to increase continuously with the rise of temperature. However, when the samples were cooled down, the resistance was observed to decrease following a different path. The presence of conduction hysteresis behavior in the resistance-temperature curves during the heating and cooling cycles was then verified. The electrical conduction of the composite system is supposed to follow an activation conduction mechanism. Activation energy was calculated at different filler concentrations for both the heating and cooling processes.

Ultrahigh Oxidation Resistance and High Electrical Conductivity in Copper-Silver Powder.

PubMed

Li, Jiaxiang; Li, Yunping; Wang, Zhongchang; Bian, Huakang; Hou, Yuhang; Wang, Fenglin; Xu, Guofu; Liu, Bin; Liu, Yong

2016-12-22

The electrical conductivity of pure Cu powder is typically deteriorated at elevated temperatures due to the oxidation by forming non-conducting oxides on surface, while enhancing oxidation resistance via alloying is often accompanied by a drastic decline of electrical conductivity. Obtaining Cu powder with both a high electrical conductivity and a high oxidation resistance represents one of the key challenges in developing next-generation electrical transferring powder. Here, we fabricate a Cu-Ag powder with a continuous Ag network along grain boundaries of Cu particles and demonstrate that this new structure can inhibit the preferential oxidation in grain boundaries at elevated temperatures. As a result, the Cu-Ag powder displays considerably high electrical conductivity and high oxidation resistance up to approximately 300 °C, which are markedly higher than that of pure Cu powder. This study paves a new pathway for developing novel Cu powders with much enhanced electrical conductivity and oxidation resistance in service.

In situ measurement system

DOEpatents

Lord, D.E.

1980-11-24

A multipurpose in situ underground measurement system comprising a plurality of long electrical resistance elements in the form of rigid reinforcing bars, each having an open loop hairpin configuration of shorter length than the other resistance elements. The resistance elements are arranged in pairs in a unitized structure, and grouted in place in the underground volume. Measurement means are provided for obtaining for each pair the electrical resistance of each element and the difference in electrical resistance of the paired elements, which difference values may be used in analytical methods involving resistance as a function of temperature. A scanner means sequentially connects the resistance-measuring apparatus to each individual pair of elements. A source of heating current is also selectively connectable for heating the elements to an initial predetermined temperature prior to electrical resistance measurements when used as an anemometer.

Electrical properties of materials for high temperature strain gage applications

NASA Technical Reports Server (NTRS)

Brittain, John O.

1989-01-01

A study was done on the electrical resistance of materials that are potentially useful as resistance strain gages at high temperatures under static strain conditions. Initially a number of binary alloys were investigated. Later, third elements were added to these alloys, all of which were prepared by arc melting. Several transition metals were selected for experimentation, most prepared as thin films. Difficulties with electrical contacts thwarted efforts to extend measurements to the targeted 1000 C, but results obtained did suggest ways of improving the electrical resistance characteristics of certain materials.

Electrical resistance of CNT-PEEK composites under compression at different temperatures

PubMed Central

2011-01-01

Electrically conductive polymers reinforced with carbon nanotubes (CNTs) have generated a great deal of scientific and industrial interest in the last few years. Advanced thermoplastic composites made of three different weight percentages (8%, 9%, and 10%) of multiwalled CNTs and polyether ether ketone (PEEK) were prepared by shear mixing process. The temperature- and pressure-dependent electrical resistance of these CNT-PEEK composites have been studied and presented in this paper. It has been found that electrical resistance decreases significantly with the application of heat and pressure. PMID:21711952

Moderate temperature-dependent surface and volume resistivity and low-frequency dielectric constant measurements of pure and multi-walled carbon nanotube (MWCNT) doped polyvinyl alcohol thin films

NASA Astrophysics Data System (ADS)

Edwards, Matthew; Guggilla, Padmaja; Reedy, Angela; Ijaz, Quratulann; Janen, Afef; Uba, Samuel; Curley, Michael

2017-08-01

Previously, we have reported measurements of temperature-dependent surface resistivity of pure and multi-walled carbon nanotube (MWNCT) doped amorphous Polyvinyl Alcohol (PVA) thin films. In the temperature range from 22 °C to 40 °C with humidity-controlled environment, we found the surface resistivity to decrease initially, but to rise steadily as the temperature continued to increase. Moreover, electric surface current density (Js) was measured on the surface of pure and MWCNT doped PVA thin films. In this regard, the surface current density and electric field relationship follow Ohm's law at low electric fields. Unlike Ohmic conduction in metals where free electrons exist, selected captive electrons are freed or provided from impurities and dopants to become conduction electrons from increased thermal vibration of constituent atoms in amorphous thin films. Additionally, a mechanism exists that seemingly decreases the surface resistivity at higher temperatures, suggesting a blocking effect for conducting electrons. Volume resistivity measurements also follow Ohm's law at low voltages (low electric fields), and they continue to decrease as temperatures increase in this temperature range, differing from surface resistivity behavior. Moreover, we report measurements of dielectric constant and dielectric loss as a function of temperature and frequency. Both the dielectric constant and dielectric loss were observed to be highest for MWCNT doped PVA compared to pure PVA and commercial paper, and with frequency and temperature for all samples.

Novel experimental design for high pressure-high temperature electrical resistance measurements in a "Paris-Edinburgh" large volume press.

PubMed

Matityahu, Shlomi; Emuna, Moran; Yahel, Eyal; Makov, Guy; Greenberg, Yaron

2015-04-01

We present a novel experimental design for high sensitivity measurements of the electrical resistance of samples at high pressures (0-6 GPa) and high temperatures (300-1000 K) in a "Paris-Edinburgh" type large volume press. Uniquely, the electrical measurements are carried out directly on a small sample, thus greatly increasing the sensitivity of the measurement. The sensitivity to even minor changes in electrical resistance can be used to clearly identify phase transitions in material samples. Electrical resistance measurements are relatively simple and rapid to execute and the efficacy of the present experimental design is demonstrated by measuring the electrical resistance of Pb, Sn, and Bi across a wide domain of temperature-pressure phase space and employing it to identify the loci of phase transitions. Based on these results, the phase diagrams of these elements are reconstructed to high accuracy and found to be in excellent agreement with previous studies. In particular, by mapping the locations of several well-studied reference points in the phase diagram of Sn and Bi, it is demonstrated that a standard calibration exists for the temperature and pressure, thus eliminating the need for direct or indirect temperature and pressure measurements. The present technique will allow simple and accurate mapping of phase diagrams under extreme conditions and may be of particular importance in advancing studies of liquid state anomalies.

Temperature dependent electrical properties of polyaniline film grown on paper through aniline vapor polymerization

NASA Astrophysics Data System (ADS)

Deb, K.; Bhowmik, K. L.; Bera, A.; Chattopadhyay, K. K.; Saha, B.

2016-05-01

Polyaniline thin film has been prepared on paper by aniline vapor deposition technique. Ferric chloride has been used as polymerizing agent in this approach. The prepared films were studied through electrical resistivity and optical properties measurements. The electrical resistivity of the polyaniline film shows significant temperature dependence. The resistance sharply falls with the increase in temperature. The optical absorbance measurements shows characteristics absorbance peak indicating the formation of conducting emeraldine salt form of polyaniline. The optical energy band gap of the film was calculated from the transmittance spectra. The optical energy band gap and electrical conductivity of the polyaniline film is well suited for their applications in electronic devices.

Electrical Resistivity of Vanadium and Zirconium.

DTIC Science & Technology

1982-12-01

general agreement on the temperature depodeace of the electrical resistivity. There are little good data from 300 VI to 1200 K. The recommended values...liquid region, are based on the compromise between the only two data sets available. due to Seydel and Fucks [91 (data set 1) and to Gathers et al. (101...555-600 (1928). 8. Block. F., ’The Electrical Resistance Law at Low Temperatures,’ Z. Phys.. 12.208-14 (1930). -𔄃. Seydel, U. and Fucke , W

Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires self-heated to melting temperature

NASA Astrophysics Data System (ADS)

Bakan, Gokhan; Adnane, Lhacene; Gokirmak, Ali; Silva, Helena

2012-09-01

Temperature-dependent electrical resistivity, ρ(T), and thermal conductivity, k(T), of nanocrystalline silicon microwires self-heated to melt are extracted by matching simulated current-voltage (I-V) characteristics to experimental I-V characteristics. Electrical resistivity is extracted from highly doped p-type wires on silicon dioxide in which the heat losses are predominantly to the substrate and the self-heating depends mainly on ρ(T) of the wires. The extracted ρ(T) decreases from 11.8 mΩ cm at room-temperature to 5.2 mΩ cm at 1690 K, in reasonable agreement with the values measured up to ˜650 K. Electrical resistivity and thermal conductivity are extracted from suspended highly doped n-type silicon wires in which the heat losses are predominantly through the wires. In this case, measured ρ(T) (decreasing from 20.5 mΩ cm at room temperature to 12 mΩ cm at 620 K) is used to extract ρ(T) at higher temperatures (decreasing to 1 mΩ cm at 1690 K) and k(T) (decreasing from 30 W m-1 K-1 at room temperature to 20 W m-1 K-1 at 1690 K). The method is tested by using the extracted parameters to model wires with different dimensions. The experimental and simulated I-V curves for these wires show good agreement up to high voltage and temperature levels. This technique allows extraction of the electrical resistivity and thermal conductivity up to very high temperatures from self-heated microstructures.

Superconducting thermoelectric generator

DOEpatents

Metzger, J.D.; El-Genk, M.S.

1998-05-05

An apparatus and method for producing electricity from heat is disclosed. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses. The elimination of resistive losses significantly increases the conversion efficiency of the thermoelectric device. 4 figs.

Superconducting thermoelectric generator

DOEpatents

Metzger, J.D.; El-Genk, M.S.

1996-01-01

An apparatus and method for producing electricity from heat. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses. The elimination of resistive losses significantly increases the conversion efficiency of the thermoelectric device.

Superconducting thermoelectric generator

DOEpatents

Metzger, John D.; El-Genk, Mohamed S.

1998-01-01

An apparatus and method for producing electricity from heat. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses. The elimination of resistive losses significantly increases the conversion efficiency of the thermoelectric device.

Boron modified molybdenum silicide and products

DOEpatents

Meyer, M.K.; Akinc, M.

1999-02-02

A boron-modified molybdenum silicide material is disclosed having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo{sub 5}Si{sub 3} phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi{sub 2} heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo{sub 5}Si{sub 3} for structural integrity. 7 figs.

Boron modified molybdenum silicide and products

DOEpatents

Meyer, Mitchell K.; Akinc, Mufit

1999-02-02

A boron-modified molybdenum silicide material having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo.sub.5 Si.sub.3 phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi.sub.2 heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo.sub.5 Si.sub.3 for structural integrity.

Polyimide/Glass Composite High-Temperature Insulation

NASA Technical Reports Server (NTRS)

Pater, Ruth H.; Vasquez, Peter; Chatlin, Richard L.; Smith, Donald L.; Skalski, Thomas J.; Johnson, Gary S.; Chu, Sang-Hyon

2009-01-01

Lightweight composites of RP46 polyimide and glass fibers have been found to be useful as extraordinarily fire-resistant electrical-insulation materials. RP46 is a polyimide of the polymerization of monomeric reactants (PMR) type, developed by NASA Langley Research Center. RP46 has properties that make it attractive for use in electrical insulation at high temperatures. These properties include high-temperature resistance, low relative permittivity, low dissipation factor, outstanding mechanical properties, and excellent resistance to moisture and chemicals. Moreover, RP46 contains no halogen or other toxic materials and when burned it does not produce toxic fume or gaseous materials. The U. S. Navy has been seeking lightweight, high-temperature-resistant electrical-insulation materials in a program directed toward reducing fire hazards and weights in ship electrical systems. To satisfy the requirements of this program, an electrical-insulation material must withstand a 3-hour gas-flame test at 1,600 F (about 871 C). Prior to the development reported here, RP46 was rated for use at temperatures from -150 to +700 F (about -101 to 371 C), and no polymeric product - not even RP46 - was expected to withstand the Navy 3-hour gas-flame test.

Ultrahigh Oxidation Resistance and High Electrical Conductivity in Copper-Silver Powder

PubMed Central

Li, Jiaxiang; Li, Yunping; Wang, Zhongchang; Bian, Huakang; Hou, Yuhang; Wang, Fenglin; Xu, Guofu; Liu, Bin; Liu, Yong

2016-01-01

The electrical conductivity of pure Cu powder is typically deteriorated at elevated temperatures due to the oxidation by forming non-conducting oxides on surface, while enhancing oxidation resistance via alloying is often accompanied by a drastic decline of electrical conductivity. Obtaining Cu powder with both a high electrical conductivity and a high oxidation resistance represents one of the key challenges in developing next-generation electrical transferring powder. Here, we fabricate a Cu-Ag powder with a continuous Ag network along grain boundaries of Cu particles and demonstrate that this new structure can inhibit the preferential oxidation in grain boundaries at elevated temperatures. As a result, the Cu-Ag powder displays considerably high electrical conductivity and high oxidation resistance up to approximately 300 °C, which are markedly higher than that of pure Cu powder. This study paves a new pathway for developing novel Cu powders with much enhanced electrical conductivity and oxidation resistance in service. PMID:28004839

Temperature dependent electrical properties of polyaniline film grown on paper through aniline vapor polymerization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deb, K.; Bera, A.; Saha, B., E-mail: biswajit.physics@gmail.com

2016-05-23

Polyaniline thin film has been prepared on paper by aniline vapor deposition technique. Ferric chloride has been used as polymerizing agent in this approach. The prepared films were studied through electrical resistivity and optical properties measurements. The electrical resistivity of the polyaniline film shows significant temperature dependence. The resistance sharply falls with the increase in temperature. The optical absorbance measurements shows characteristics absorbance peak indicating the formation of conducting emeraldine salt form of polyaniline. The optical energy band gap of the film was calculated from the transmittance spectra. The optical energy band gap and electrical conductivity of the polyaniline filmmore » is well suited for their applications in electronic devices.« less

Influence of temperature on the electrical conductivity of leachate from municipal solid waste.

PubMed

Grellier, Solenne; Robain, Henri; Bellier, Gérard; Skhiri, Nathalie

2006-09-01

A bioreactor landfill is designed to manage municipal solid waste, through accelerated waste biodegradation, and stabilisation of the process by means of the controlled addition of liquid, i.e. leachate recirculation. The measurement of electrical resistivity by Electrical Resistivity Tomography (ERT) allows to monitor water content present in the bioreactors. Variations in electrical resistivity are linked to variations in moisture content and temperature. In order to overcome this ambiguity, two laboratory experiments were carried out to establish a relationship between temperature and electrical conductivity: the first set of measurements was made for leachate alone, whereas the second set was made with two different granular media saturated with leachate. Both experiments confirm a well known increase in conductivity of about 2% degrees C(-1). However, higher suspended matter concentrations lead to a lower dependence of electrical conductivity on temperature. Furthermore, for various porous media saturated with an identical leachate, the higher the specific surface of the granular matrix, the lower the effective bulk electrical conductivity. These observations show that a correct understanding of the electrical properties of liquids requires the nature and (in particular) the size of the electrical charge carriers to be taken into account.

Determination of Electrical Resistivity of Dry Coke Beds

NASA Astrophysics Data System (ADS)

Eidem, P. A.; Tangstad, M.; Bakken, J. A.

2008-02-01

The electrical resistivity of the coke bed is of great importance when producing FeMn, SiMn, and FeCr in a submerged arc furnace. In these processes, a coke bed is situated below and around the electrode tip and consists of metallurgical coke, slag, gas, and metal droplets. Since the basic mechanisms determining the electrical resistivity of a coke bed is not yet fully understood, this investigation is focused on the resistivity of dry coke beds consisting of different carbonaceous materials, i.e., coke beds containing no slag or metal. A method that reliably compares the electrical bulk resistivity of different metallurgical cokes at 1500 °C to 1600 °C is developed. The apparatus is dimensioned for industrial sized materials, and the electrical resistivity of anthracite, charcoal, petroleum coke, and metallurgical coke has been measured. The resistivity at high temperatures of the Magnitogorsk coke, which has the highest resistivity of the metallurgical cokes investigated, is twice the resistivity of the Corus coke, which has the lowest electrical resistivity. Zdzieszowice and SSAB coke sort in between with decreasing resistivities in the respective order. The electrical resistivity of anthracite, charcoal, and petroleum coke is generally higher than the resistivity of the metallurgical cokes, ranging from about two to about eight times the resistivity of the Corus coke at 1450 °C. The general trend is that the bulk resistivity of carbon materials decreases with increasing temperature and increasing particle size.

Temperature-dependent resistance switching in SrTiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jian-kun; University of Chinese Academy of Sciences, Beijing 100049; Ma, Chao

2016-06-13

Resistance switching phenomena were studied by varying temperature in SrTiO{sub 3} single crystal. The resistance hysteresis loops appear at a certain temperature ranging from 340 K to 520 K. With the assistance of 375 nm ultraviolet continuous laser, the sample resistance is greatly reduced, leading to a stable effect than that in dark. These resistance switching phenomena only exist in samples with enough oxygen vacancies, which is confirmed by spherical aberration-corrected scanning transmission electron microscopy measurements, demonstrating an important role played by oxygen vacancies. At temperatures above 340 K, positively charged oxygen vacancies become mobile triggered by external electric field, and the resistance switchingmore » effect emerges. Our theoretical results based on drift-diffusion model reveal that the built-in field caused by oxygen vacancies can be altered under external electric field. Therefore, two resistance states are produced under the cooperative effect of built-in field and external field. However, the increasing mobility of oxygen vacancies caused by higher temperature promotes internal electric field to reach equilibrium states quickly, and suppresses the hysteresis loops above 420 K.« less

Electrically resistive coating for remediation (regeneration) of a diesel particulate filter and method

DOEpatents

Phelps, Amanda C [Malibu, CA; Kirby, Kevin K [Calabasas Hills, CA; Gregoire, Daniel J [Thousand Oaks, CA

2012-02-14

A resistively heated diesel particulate filter (DPF). The resistively heated DPF includes a DPF having an inlet surface and at least one resistive coating on the inlet surface. The at least one resistive coating is configured to substantially maintain its resistance in an operating range of the DPF. The at least one resistive coating has a first terminal and a second terminal for applying electrical power to resistively heat up the at least one resistive coating in order to increase the temperature of the DPF to a regeneration temperature. The at least one resistive coating includes metal and semiconductor constituents.

Magnetic and electrical properties of several Mn-based amorphous alloys

NASA Astrophysics Data System (ADS)

Obi, Y.; Morita, H.; Fujimori, H.

1987-03-01

Magnetic and electrical properties of amorphous Mn-Y, Mn-Zr, and Mn-Nb alloys have been investigated. All these alloys have a temperature-dependent susceptibility which is well fitted by a Curie-Weiss law. This implies the existence of localized magnetic moments associated with the Mn atoms. In addition, amorphous Mn-Y alloys exhibit spin-glass characteristics at low temperature. The experimental results of the electrical resistivity show that the temperature coefficient of resistivity (TCR) of both Mn-Y and Mn-Zr are negative, while Mn-Nb has a positive TCR. On the other hand, the resistivity-temperature curves of Mn-Zr and Mn-Nb have nearly the same tendency but are different from that of Mn-Y.

Electrical network method for the thermal or structural characterization of a conducting material sample or structure

DOEpatents

Ortiz, Marco G.

1993-01-01

A method for modeling a conducting material sample or structure system, as an electrical network of resistances in which each resistance of the network is representative of a specific physical region of the system. The method encompasses measuring a resistance between two external leads and using this measurement in a series of equations describing the network to solve for the network resistances for a specified region and temperature. A calibration system is then developed using the calculated resistances at specified temperatures. This allows for the translation of the calculated resistances to a region temperature. The method can also be used to detect and quantify structural defects in the system.

Electrical network method for the thermal or structural characterization of a conducting material sample or structure

DOEpatents

Ortiz, M.G.

1993-06-08

A method for modeling a conducting material sample or structure system, as an electrical network of resistances in which each resistance of the network is representative of a specific physical region of the system. The method encompasses measuring a resistance between two external leads and using this measurement in a series of equations describing the network to solve for the network resistances for a specified region and temperature. A calibration system is then developed using the calculated resistances at specified temperatures. This allows for the translation of the calculated resistances to a region temperature. The method can also be used to detect and quantify structural defects in the system.

Influence of processing history on the mechanical properties and electrical resistivity of polycarbonate - multi-walled carbon nanotubes nanocomposites

NASA Astrophysics Data System (ADS)

Choong, Gabriel Y. H.; De Focatiis, Davide S. A.

2015-05-01

In this work we investigate the effects of compounding temperature and secondary melt processing on the mechanical response and electrical behaviour of polycarbonate filled with 3 wt% carbon nanotubes. The nanocomposites were melt compounded in an industrial setting at a range of temperatures, and subsequently injection moulded or compression moulded. The surface hardness, uniaxial tensile properties and electrical resistivity were measured. Secondary melt processing is found to be the dominant process in determining the final mechanical properties and resistivity of these materials.

Semiconductor bridge (SCB) igniter

DOEpatents

Bickes, Jr., Robert W.; Schwarz, Alfred C.

1987-01-01

In an explosive device comprising an explosive material which can be made to explode upon activation by activation means in contact therewith; electrical activation means adaptable for activating said explosive material such that it explodes; and electrical circuitry in operation association with said activation means; there is an improvement wherein said activation means is an electrical material which, at an elevated temperature, has a negative temperature coefficient of electrical resistivity and which has a shape and size and an area of contact with said explosive material sufficient that it has an electrical resistance which will match the resistance requirements of said associated electrical circuitry when said electrical material is operationally associated with said circuitry, and wherein said electrical material is polycrystalline; or said electrical material is crystalline and (a) is mounted on a lattice matched substrate or (b) is partially covered with an intimately contacting metallization area which defines its area of contact with said explosive material.

Temperature Dependence of Electrical Resistance of Woven Melt-Infiltrated SiCf/SiC Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Appleby, Matthew P.; Morscher, Gregory N.; Zhu, Dongming

2016-01-01

Recent studies have successfully shown the use of electrical resistance (ER)measurements to monitor room temperature damage accumulation in SiC fiber reinforced SiC matrix composites (SiCf/SiC) Ceramic Matrix Composites (CMCs). In order to determine the feasibility of resistance monitoring at elevated temperatures, the present work investigates the temperature dependent electrical response of various MI (Melt Infiltrated)-CVI (Chemical Vapor Infiltrated) SiC/SiC composites containing Hi-Nicalon Type S, Tyranno ZMI and SA reinforcing fibers. Test were conducted using a commercially available isothermal testing apparatus as well as a novel, laser-based heating approach developed to more accurately simulate thermomechanical testing of CMCs. Secondly, a post-test inspection technique is demonstrated to show the effect of high-temperature exposure on electrical properties. Analysis was performed to determine the respective contribution of the fiber and matrix to the overall composite conductivity at elevated temperatures. It was concluded that because the silicon-rich matrix material dominates the electrical response at high temperature, ER monitoring would continue to be a feasible method for monitoring stress dependent matrix cracking of melt-infiltrated SiC/SiC composites under high temperature mechanical testing conditions. Finally, the effect of thermal gradients generated during localized heating of tensile coupons on overall electrical response of the composite is determined.

The electrical resistance of gold-capped chromium thin films

NASA Astrophysics Data System (ADS)

Ohashi, Masashi; Sawabu, Masaki; Ohashi, Kohei; Miyagawa, Masahiro; Maeta, Kae; Kubota, Takahide; Takanashi, Koki

2018-03-01

We studied the electrical resistance of polycrystalline chromium films capped by a gold layer. No anomaly was detected by resistance measurements of 10 nm thick film around room temperature, indicating that the antiferromagnetic interaction may be suppressed as decreasing the thickness of the chromium film. The sheet resistance Rs (T) curves differ from polycrystalline chromium films in previous studies because of the electrical current flows through a gold capping layer. On the other hand, the resistance drop is observed at T C = 1.15±0.05 K as that of polycrystalline chromium films in the previous report. It means that such resistance drop is not related to the chromium oxide layer on a polycrystalline chromium films. However, it is difficult to conclude that superconducting transition occurs because of the large residual resistance below the temperature where the resistance drop is observed.

Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Birkett, Martin; Penlington, Roger

2016-07-01

We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10-1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10-25 nm the electrical resistivity is found to be a function of the film surface roughness and is well described by Namba’s model. For thicknesses of 25-40 nm the experimental data was most accurately fitted using the Mayadas and Shatkes model which accounts for grain boundary scattering of the conduction electrons. Beyond 40 nm, the thickness of the film was found to be the controlling factor and the Fuchs-Sonheimer (FS) model was used to fit the experimental data, with diffuse scattering of the conduction electrons at the two film surfaces. By combining the Fuchs and Namba (FN) models a suitable correlation between theoretical and experimental resistivity can be achieved across the full CuAlMo film thickness range of 10-1000 nm. The irreversibility of resistance for films of thickness >200 nm, which demonstrated bulk conductivity, was measured to be less than 0.03% following subjection to temperature cycles of -55 and +125 °C and the temperature co-efficient of resistance was less than ±15 ppm °C-1.

Method of manufacturing iron aluminide by thermomechanical processing of elemental powders

DOEpatents

Deevi, Seetharama C.; Lilly, Jr., A. Clifton; Sikka, Vinod K.; Hajaligol, Mohammed R.

2000-01-01

A powder metallurgical process of preparing iron aluminide useful as electrical resistance heating elements having improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The iron aluminide has an entirely ferritic microstructure which is free of austenite and can include, in weight %, 20 to 32% Al, and optional additions such as .ltoreq.1% Cr, .gtoreq.05% Zr or ZrO.sub.2 stringers extending perpendicular to an exposed surface of the heating element, .ltoreq.2% Ti, .ltoreq.2% Mo, .ltoreq.1% Zr, .ltoreq.1% C, .ltoreq.0.1% B, .ltoreq.30% oxide dispersoid and/or electrically insulating or electrically conductive covalent ceramic particles, .ltoreq.1 % rare earth metal, .ltoreq.1% oxygen, and/or .ltoreq.3% Cu. The process includes forming a mixture of aluminum powder and iron powder, shaping the mixture into an article such as by cold rolling the mixture into a sheet, and sintering the article at a temperature sufficient to react the iron and aluminum powders and form iron aluminide. The sintering can be followed by hot or cold rolling to reduce porosity created during the sintering step and optional annealing steps in a vacuum or inert atmosphere.

Impedance spectroscopy study of 2, 2, 7, 7' -tetra kis-(N,N-di-4-methoxy phenyl amino)-9,9'-spirobifluorene thin films

NASA Astrophysics Data System (ADS)

Rana, Omwati; Agrawal, Kalpana; Rajput, S. S.; Zulfequar, M.; Husain, M.; Kamalasanan, M. N.; Srivastava, Ritu

2016-05-01

The electrical properties of thermally evaporated film of 2,2,7,7'-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9'-spirobifluorene (Spiro MeO TAD) have been investigated for hole only devices as a function of temperatures at frequency range from 1Hz to 1 MHz using Impedance spectroscopy. Cole-Cole plots, at each temperature, show semicircles that can be modeled with a contact resistance and parallel resistance -capacitor(R-C) circuits. Bulk resistance decreases and electrical conductivity increases with increasing temperature which indicate negative temperature coefficient of resistance nature and short range translational type hopping mechanism in Spiro MeO TAD thin films.

Electrical Characterization of Temperature Dependent Resistive Switching in Pr0.7C0.3MnO3

NASA Astrophysics Data System (ADS)

Lopez, Melinda; Salvo, Christopher; Tsui, Stephen

2012-02-01

Resistive switching offers a non-volatile and reversible means to possibly create a more physically compact yet larger access capacity in memory technology. While there has been a great deal of research conducted on this electrical property in oxide materials, there is still more to be learned about this at both high voltage pulsing and cryogenic temperatures. In this work, the electrical properties of a PCMO-metal interface switch were examined after application of voltage pulsing varying from 100 V to 1000 V and at temperatures starting at 293 K and lowered to 80 K. What was discovered was that below temperatures of 150 K, the resistive switching began to decrease across all voltage pulsing and that at all temperatures before this cessation, the change in resistive switching increased with higher voltage pulsing. We suggest that a variable density of charge traps at the interface is a likely mechanism, and work continues to extract more details.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eidem, P.A.; Tangstad, M.; Bakken, J.A.

The electrical resistivity of the coke bed is of great importance when producing FeMn, SiMn, and FeCr in a submerged arc furnace. In these processes, a coke bed is situated below and around the electrode tip and consists of metallurgical coke, slag, gas, and metal droplets. Since the basic mechanisms determining the electrical resistivity of a coke bed is not yet fully understood, this investigation is focused on the resistivity of dry coke beds consisting of different carbonaceous materials, i.e., coke beds containing no slag or metal. A method that reliably compares the electrical bulk resistivity of different metallurgical cokesmore » at 1500{sup o} C to 1600{sup o}C is developed. The apparatus is dimensioned for industrial sized materials, and the electrical resistivity of anthracite, charcoal, petroleum coke, and metallurgical coke has been measured. The resistivity at high temperatures of the Magnitogorsk coke, which has the highest resistivity of the metallurgical cokes investigated, is twice the resistivity of the Corus coke, which has the lowest electrical resistivity. Zdzieszowice and SSAB coke sort in between with decreasing resistivities in the respective order. The electrical resistivity of anthracite, charcoal, and petroleum coke is generally higher than the resistivity of the metallurgical cokes, ranging from about two to about eight times the resistivity of the Corus coke at 1450{sup o}C. The general trend is that the bulk resistivity of carbon materials decreases with increasing temperature and increasing particle size.« less

Electrical resistivity in Zr48Nb8Cu12Fe8Be24 glassy and crystallized alloys

NASA Astrophysics Data System (ADS)

Bai, H. Y.; Tong, C. Z.; Zheng, P.

2004-02-01

The electrical resistivity of Zr48Nb8Cu12Fe8Be24 bulk metallic glassy and crystallized alloys in the temperature range of 4.2-293 K is investigated. It is found that the resistivity in glassy and crystallized states shows opposite temperature coefficients. For the metallic glass, the resistivity shows a negative logarithmic dependence at temperatures below 16 K, whereas it has more normal behavior for the crystallized alloy. At higher temperatures, the resistivity in both glassy and crystallized alloys shows dependence upon both T and T2, but the signs of the T and T2 terms are opposite. The results are interpreted in terms of scattering from two-level tunneling states in glasses and the generalized Ziman diffraction model.

Neutron Diffraction and Electrical Transport Studies on Magnetic Transition in Terbium at High Pressures and Low Temperatures

NASA Astrophysics Data System (ADS)

Thomas, Sarah; Montgomery, Jeffrey; Tsoi, Georgiy; Vohra, Yogesh; Weir, Samuel; Tulk, Christopher; Moreira Dos Santos, Antonio

2013-06-01

Neutron diffraction and electrical transport measurements have been carried out on the heavy rare earth metal terbium at high pressures and low temperatures in order to elucidate its transition from a helical antiferromagnetic to a ferromagnetic ordered phase as a function of pressure. The electrical resistance measurements using designer diamonds show a change in slope as the temperature is lowered through the ferromagnetic Curie temperature. The temperature of the ferromagnetic transition decreases at a rate of -16.7 K/GPa till 3.6 GPa, where terbium undergoes a structural transition from hexagonal close packed (hcp) to an α-Sm phase. Above this pressure, the electrical resistance measurements no longer exhibit a change in slope. In order to confirm the change in magnetic phase suggested by the electrical resistance measurements, neutron diffraction measurements were conducted at the SNAP beamline at the Oak Ridge National Laboratory. Measurements were made at pressures to 5.3 GPa and temperatures as low as 90 K. An abrupt increase in peak intensity in the neutron diffraction spectra signaled the onset of magnetic order below the Curie temperature. A magnetic phase diagram of rare earth metal terbium will be presented to 5.3 GPa and 90 K based on these studies.

30 CFR 7.407 - Test for flame resistance of electric cables and cable splices.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Test for flame resistance of electric cables... Electric Cables, Signaling Cables, and Cable Splice Kits § 7.407 Test for flame resistance of electric... a minimum of 24 hours at a temperature of 70 ±10 °F (21.1 ±5.5 °C) and a relative humidity of 55 ±10...

30 CFR 7.407 - Test for flame resistance of electric cables and cable splices.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Test for flame resistance of electric cables... Electric Cables, Signaling Cables, and Cable Splice Kits § 7.407 Test for flame resistance of electric... a minimum of 24 hours at a temperature of 70 ±10 °F (21.1 ±5.5 °C) and a relative humidity of 55 ±10...

30 CFR 7.407 - Test for flame resistance of electric cables and cable splices.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Test for flame resistance of electric cables... Electric Cables, Signaling Cables, and Cable Splice Kits § 7.407 Test for flame resistance of electric... a minimum of 24 hours at a temperature of 70 ±10 °F (21.1 ±5.5 °C) and a relative humidity of 55 ±10...

Structural, optical and high pressure electrical resistivity studies of pure NiO and Cu-doped NiO nanoparticles

NASA Astrophysics Data System (ADS)

Marselin, M. Abila; Jaya, N. Victor

2016-04-01

In this paper, pure NiO and Cu-doped NiO nanoparticles are prepared by co-precipitation method. The electrical resistivity measurements by applying high pressure on pure NiO and Cu-doped NiO nanoparticles were reported. The Bridgman anvil set up is used to measure high pressures up to 8 GPa. These measurements show that there is no phase transformation in the samples till the high pressure is reached. The samples show a rapid decrease in electrical resistivity up to 5 GPa and it remains constant beyond 5 GPa. The electrical resistivity and the transport activation energy of the samples under high pressure up to 8 GPa have been studied in the temperature range of 273-433 K using diamond anvil cell. The temperature versus electrical resistivity studies reveal that the samples behave like a semiconductor. The activation energies of the charge carriers depend on the size of the samples.

Electrical Properties of Bismuth/Lithium-Cosubstituted Strontium Titanate Ceramics

NASA Astrophysics Data System (ADS)

Alkathy, Mahmoud. S.; James Raju, K. C.

2018-03-01

Sr(1-x)(Bi,Li) x TiO3 compound was prepared via a solid-state reaction route with microwave heating of the starting materials. X-ray diffraction analysis revealed pure perovskite phase without formation of any secondary phases. The electrical conductivity was studied as a function of temperature and frequency. The experimental results indicate that the alternating-current (AC) conductivity increased with frequency, following the Jonscher power law. To interpret the possible mechanism for electrical conduction, the correlated barrier hopping model was applied. The effect of temperature and the Bi/Li concentration on the electrical resistivity was studied. The results showed that the electrical resistivity decreased with increasing temperature, which could be due to increased thermal energy of electrons. Also, the electrical resistivity decreased with increase in the amount of Bi and Li, which could be due to increased concentration of structural defects, which could increase the number of either electrons or holes available for conduction. A single semicircular arc corresponding to a single relaxation process was observed for all the investigated ceramics, suggesting a grain contribution to the total resistance in these materials. Arrhenius plots were used to obtain the activation energy for the samples.

Electrical Properties of Bismuth/Lithium-Cosubstituted Strontium Titanate Ceramics

NASA Astrophysics Data System (ADS)

Alkathy, Mahmoud. S.; James Raju, K. C.

2018-07-01

Sr(1- x)(Bi,Li) x TiO3 compound was prepared via a solid-state reaction route with microwave heating of the starting materials. X-ray diffraction analysis revealed pure perovskite phase without formation of any secondary phases. The electrical conductivity was studied as a function of temperature and frequency. The experimental results indicate that the alternating-current (AC) conductivity increased with frequency, following the Jonscher power law. To interpret the possible mechanism for electrical conduction, the correlated barrier hopping model was applied. The effect of temperature and the Bi/Li concentration on the electrical resistivity was studied. The results showed that the electrical resistivity decreased with increasing temperature, which could be due to increased thermal energy of electrons. Also, the electrical resistivity decreased with increase in the amount of Bi and Li, which could be due to increased concentration of structural defects, which could increase the number of either electrons or holes available for conduction. A single semicircular arc corresponding to a single relaxation process was observed for all the investigated ceramics, suggesting a grain contribution to the total resistance in these materials. Arrhenius plots were used to obtain the activation energy for the samples.

Monitoring of Leachate Recirculation in a Bioreactor Using Electrical Resistivity

NASA Astrophysics Data System (ADS)

Grellier, S.; Bureau, N.; Robain, H.; Tabbagh, A.; Camerlynck, C.; Guerin, R.

2004-05-01

The bioreactor is a concept of waste landfill management consisting in speeding up the biodegradation by optimizing the moisture content through leachate recirculation. Electrical resistivity tomography (ERT) is carried out with fast resistivity-meter (Syscal Pro, IRIS Instruments, developed in the framework of the research project CERBERE 01V0665-69, funded by the French Research Ministry) to monitor leachate recirculation. During a recirculation period waste moisture increases, so that electrical resistivity may decrease, but at the same time temperature and mineralization of both waste and leachate become intermixed. If waste temperature is much higher than leachate temperature electrical resistivity will not decrease as much as if the temperature difference was smaller. If leachate mineralization (i.e. leachate conductivity) is higher than that of wet waste in the landfill, electrical resistivity will tend to decrease. Otherwise for example after an addition of rain water into the leachate storage or in case of very wet waste, the resistivities of each medium (leachate and wet waste) can be almost the same, so that leachate mineralization will not have a great influence on waste resistivity. Resistivity measurements were performed during 85 minutes injection trials (with a discharge of 20 m3 h-1) where leachate was injected through a vertical borehole perforated between 1.85 and 4.15 m. Three first measurements are made during the injection (3, 30 and 60 minutes from the beginning of the injection) and the two other after the injection period (8 and 72 minutes after the end of the injection). Apparent and interpreted resistivity variations that occurred during injection trials, expressed as the relative differences (in %) between apparent, respectively interpreted, resistivity during injection and apparent, respectively interpreted, resistivity before injection (reference measurement) show the formation of a plume (a negative anomaly: resistivity decreases with increasing moisture content). The positive anomaly could be explained by an increasing of biogas proportion in waste porosity. For this experiment, leachate temperature is relatively cold (between 5 and 10° C, as the injection trials take place at the end of October), leachate conductivity is about 9200 μ S cm-1 (i.e. a resistivity of 1.1 Ω m) and waste resistivity in the borehole region is about 80 Ω m. This is a situation where the temperature difference between waste and leachate is large and the resistivity difference between waste and leachate is high. The resistivity variation is essentially due to waste moisture increase. ERT method allows leachate diffusion to be seen through the waste mass and the influence zone of the leachate recirculation system to be determined.

Overheating instability of a thin conductor with respect to stratification

NASA Astrophysics Data System (ADS)

Garanin, S. F.; Kuznetsov, S. D.

2018-04-01

We consider an overheating instability of a thin (compared to the skin depth) conductor with respect to stratification at the stage when its resistivity rises up to an electrical explosion. Temperature perturbations under such conditions are shown to grow in proportion to resistivity. In the model, when resistivity is proportional to temperature, perturbations grow in proportion to temperature and hence exhibit no relative growth. For a conductor with initial thickness perturbations, temperature perturbations grow in proportion to resistivity and current action integral, i.e., somewhat faster than perturbations in the problem of constant thickness conductors. Comparison of our results with simulations of the growth of stratification during electrical heating of foils in warm dense matter generation systems demonstrates their close agreement.

Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

NASA Astrophysics Data System (ADS)

Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

2017-11-01

Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

NASA Astrophysics Data System (ADS)

Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

2018-06-01

Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

NASA Astrophysics Data System (ADS)

Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

2017-12-01

A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

Resistivity behavior of hydrogen and liquid silane at high shock compression

NASA Astrophysics Data System (ADS)

Wang, Yi-Gao; Liu, Fu-Sheng; Liu, Qi-Jun

2018-07-01

To study the electrical properties of hydrogen rich compounds under extreme conditions, the electrical resistivity of density hydrogen and silane fluid was measured, respectively. The hydrogen sample was prepared by compressing pure hydrogen gas to 10 MPa in a coolant target system at the temperature of 77 K. The silane sample can be obtained with the same method. High-pressure and high-temperature experiments were performed using a two-stage light-gas gun. The electrical resistivity of the sample decreased with increasing pressure and temperature as expected. A minimum electrical resistivity value of 0.3 × 10-3 Ω cm at 138 GPa and 4100 K was obtained for silane. The minimum resistivity of hydrogen in the state of 102 GPa and 4300 K was 0.35 Ω cm. It showed that the measured electrical resistivity of the shock-compressed hydrogen was an order of magnitude higher than fluid silane at 50-90 GPa. However, beyond 100 GPa, the resistivity difference between silane and hydrogen was very minor. The carriers in the sample were hydrogen, and the concentration of hydrogen atoms in these two substances was close to each other. These results supported the theoretical prediction that silane was interpreted simply in terms of chemical decomposition into silicon nanoparticles and fluid hydrogen, and electrical conduction flows predominately dominated by the fluid hydrogen. In addition, the results also supported the theory of "chemical precompression", the existence of Sisbnd H bond helped to reduce the pressure of hydrogen metallization. These findings could lead the way for further metallic phases of hydrogen-rich materials and experimental studies.

The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

NASA Technical Reports Server (NTRS)

Littlejohn, M. A.; Anikara, R.

1972-01-01

The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

Fully Electrical Modeling of Thermoelectric Generators with Contact Thermal Resistance Under Different Operating Conditions

NASA Astrophysics Data System (ADS)

Siouane, Saima; Jovanović, Slaviša; Poure, Philippe

2017-01-01

The Seebeck effect is used in thermoelectric generators (TEGs) to supply electronic circuits by converting the waste thermal into electrical energy. This generated electrical power is directly proportional to the temperature difference between the TEG module's hot and cold sides. Depending on the applications, TEGs can be used either under constant temperature gradient between heat reservoirs or constant heat flow conditions. Moreover, the generated electrical power of a TEG depends not only on these operating conditions, but also on the contact thermal resistance. The influence of the contact thermal resistance on the generated electrical power have already been extensively reported in the literature. However, as reported in Park et al. (Energy Convers Manag 86:233, 2014) and Montecucco and Knox (IEEE Trans Power Electron 30:828, 2015), while designing TEG-powered circuit and systems, a TEG module is mostly modeled with a Thévenin equivalent circuit whose resistance is constant and voltage proportional to the temperature gradient applied to the TEG's terminals. This widely used simplified electrical TEG model is inaccurate and not suitable under constant heat flow conditions or when the contact thermal resistance is considered. Moreover, it does not provide realistic behaviour corresponding to the physical phenomena taking place in a TEG. Therefore, from the circuit designer's point of view, faithful and fully electrical TEG models under different operating conditions are needed. Such models are mainly necessary to design and evaluate the power conditioning electronic stages and the maximum power point tracking algorithms of a TEG power supply. In this study, these fully electrical models with the contact thermal resistance taken into account are presented and the analytical expressions of the Thévenin equivalent circuit parameters are provided.

Modeling of electric and heat processes in spot resistance welding of cross-wire steel bars

NASA Astrophysics Data System (ADS)

Iatcheva, Ilona; Darzhanova, Denitsa; Manilova, Marina

2018-03-01

The aim of this work is the modeling of coupled electric and heat processes in a system for spot resistance welding of cross-wire reinforced steel bars. The real system geometry, dependences of material properties on the temperature, and changes of contact resistance and released power during the welding process have been taken into account in the study. The 3D analysis of the coupled AC electric and transient thermal field distributions is carried out using the finite element method. The novel feature is that the processes are modeled for several successive time stages, corresponding to the change of contact area, related contact resistance, and reduction of the released power, occurring simultaneously with the creation of contact between the workpieces. The values of contact resistance and power changes have been determined on the basis of preliminary experimental and theoretical investigations. The obtained results present the electric and temperature field distributions in the system. Special attention has been paid to the temperature evolution at specified observation points and lines in the contact area. The obtained information could be useful for clarification of the complicated nature of interrelated electric, thermal, mechanical, and physicochemical welding processes. Adequate modeling is also an opportunity for proper control and improvement of the system.

Electron transport in reduced graphene oxides in high electric field

NASA Astrophysics Data System (ADS)

Jian, Wen-Bin; Lai, Jian-Jhong; Wang, Sheng-Tsung; Tsao, Rui-Wen; Su, Min-Chia; Tsai, Wei-Yu; Rosenstein, Baruch; Zhou, Xufeng; Liu, Zhaoping

Due to a honeycomb structure, charge carriers in graphene exhibit quasiparticles of linear energy-momentum dispersion and phenomena of Schwinger pair creation may be explored. Because graphene is easily broken in high electric fields, single-layer reduced graphene oxides (rGO) are used instead. The rGO shows a small band gap while it reveals a graphene like behavior in high electric fields. Electron transport in rGO exhibits two-dimensional Mott's variable range hopping. The temperature behavior of resistance in low electric fields and the electric field behavior of resistance at low temperatures are all well explained by the Mott model. At temperatures higher than 200 K, the electric field behavior does not agree with the model while it shows a power law behavior with an exponent of 3/2, being in agreement with the Schwinger model. Comparing with graphene, the rGO is more sustainable to high electric field thus presenting a complete high-electric field behavior. When the rGO is gated away from the charge neutral point, the turn-on electric field of Schwinger phenomena is increased. A summary figure is given to present electric field behaviors and power law variations of resistances of single-layer rGO, graphene, and MoS2.

Rolling resistance of electric vehicle tires from track tests

NASA Technical Reports Server (NTRS)

Dustin, M. O.; Slavik, R. J.

1982-01-01

Special low-rolling-resistance tires were made for DOE's ETV-1 electric vehicle. Tests were conducted on these tires and on a set of standard commercial automotive tires to determine the rolling resistance as a function of time during both constant-speed tires and SAE J227a driving cycle tests. The tests were conducted on a test track at ambient temperatures that ranged from 15 to 32 C (59 to 89 F) and with tire pressures of 207 to 276 kPa (30 to 40 psi). At a contained-air temperature of 38 C (100 F) and a pressure of 207 kPa (30 psi) the rolling resistances of the electric vehicle tires and the standard commercial tires, respectively, were 0.0102 and 0.0088 kilogram per kilogram of vehicle weight. At a contained-air temperature of 38 C (100 F) and a pressure of 276 kPa (40 psi) the rolling resistances were 0.009 and 0.0074 kilogram per kilogram of vehicle weight, respectively.

Electric resistivity and thermoelectricity of Ni-Nb-Zr and Ni-Nb-Zr-H glassy alloys

NASA Astrophysics Data System (ADS)

Fukuhara, Mikio; Inoue, Akihisa

2010-09-01

Electric resistivity ρ and thermoelectric power S of Ni 36Nb 24Zr 40 and (Ni 0.36Nb 0.24Zr 0.4) 90H 10 glassy alloys were investigated in temperature region between 1.5 and 300 K. After resistivity curves of both alloys increase gradually with decreasing temperature down to around 6 K, they dropped suddenly and then reached zero resistivity at 2.1 K, leading to superconductivity. Linear curve with negative TCR of ρ vs T2 and slight increase of S/ T in temperature region down to around 6 K clearly reveal Fermi-liquid phenomenon in electronic state for both alloys independent of hydrogen content.

Investigate the electrical and thermal properties of the low temperature resistant silver nanowire fabricated by two-beam laser technique

NASA Astrophysics Data System (ADS)

He, Gui-Cang; Dong, Xian-Zi; Liu, Jie; Lu, Heng; Zhao, Zhen-Sheng

2018-05-01

A two-beam laser fabrication technique is introduced to fabricate the single silver nanowire (AgNW) on polyethylene terephthalate (PET) substrate. The resistivity of the AgNW is (1.31 ± 0.05) × 10-7 Ω·m, which is about 8 times of the bulk silver resistivity (1.65 × 10-8 Ω·m). The AgNW electrical resistance is measured in temperature range of 10-300 K and fitted with the Bloch-Grüneisen formula. The fitting results show that the residue resistance is 153 Ω, the Debye temperature is 210 K and the electron-phonon coupling constant is (5.72 ± 0.24) × 10-8 Ω·m. Due to the surface scattering, the Debye temperature and the electron-phonon coupling constant are lower than those of bulk silver, and the residue resistance is bigger than that of bulk silver. Thermal conductivity of the single AgNW is calculated in the corresponding temperature range, which is the biggest at the temperature approaching the Debye temperature. The AgNW on PET substrate is the low temperature resistance material and is able to be operated stably at such a low temperature of 10 K.

Improved Thermal-Switch Disks Protect Batteries

NASA Technical Reports Server (NTRS)

Darcy, Eric; Bragg, Bobby

1990-01-01

Improved thermal-switch disks help protect electrical batteries against high currents like those due to short circuits or high demands for power in circuits supplied by batteries. Protects batteries against excessive temperatures. Centered by insulating fiberglass washer. Contains conductive polymer that undergoes abrupt increase in electrical resistance when excessive current raises its temperature above specific point. After cooling, polymer reverts to low resistance. Disks reusable.

More About High-Temperature Resistance Strain Gauges

NASA Technical Reports Server (NTRS)

Englund, D. R.; Williams, W. D.; Lei, Jih-Fen; Hulse, C. O.

1994-01-01

Two reports present additional information on electrical-resistance strain gauges described in "High-Temperature Resistance Strain Gauges" (LEW-15379). For protection against oxidation at high temperatures, gauges covered, by flame spraying, with coats of alumina containing up to 1 weight percent of yttria or, perferably, containing 4 to 6 weight percent of zirconia.

Decreasing electrical resistivity of silver along the melting boundary up to 5 GPa

NASA Astrophysics Data System (ADS)

Littleton, Joshua A. H.; Secco, Richard A.; Yong, Wenjun

2018-04-01

The electrical resistivity of Ag was experimentally measured at high pressures up to 5 GPa and at temperatures up to ∼300 K above melting. The resistivity decreased as a function of pressure and increased as a function of temperature as expected and is in very good agreement with 1 atm data. Observed melting temperatures at high pressures also agree well with previous experimental and theoretical studies. The main finding of this study is that resistivity of Ag decreases along the pressure- and temperature-dependent melting boundary, in conflict with prediction of resistivity invariance. This result is discussed in terms of the dominant contribution of the increasing energy separation between the Fermi level and 4d-band as a function of pressure. Calculated from the resistivity using the Wiedemann-Franz law, the electronic thermal conductivity increased as a function of pressure and decreased as a function of temperature as expected. The decrease in the high pressure thermal conductivity in the liquid phase as a function of temperature contrasts with the behavior of the 1 atm data.

Superconductivity at 52.5 K in the lanthanum-barium-copper-oxide system

NASA Technical Reports Server (NTRS)

Chu, C. W.; Hor, P. H.; Meng, R. L.; Gao, L.; Huang, Z. J.

1987-01-01

The electrical properties of the (La/0/9/Ba/0.1/)CuO/4-y/ system are examined under ambient and hydrostatic pressures. The resistance, ac magnetic susceptibility, and superconductivity onset, midpoint, and intercept temperatures are measured. It is observed that at ambient pressure the resistance decreases with temperature decreases, and the ac susceptibility shows diamagnetic shifts starting at about 32 K. Under hydrostatic pressure a superconducting transition with an onset temperature of 52.5 K is observed, and the resistance increases at lower temperatures. The data reveal that the electrical properties of the La-Ba-Cu-O system are dependent on samples and preparation conditions. Various causes for the high temperature superconductivity of the system are proposed.

A setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials

NASA Astrophysics Data System (ADS)

Fu, Qiang; Xiong, Yucheng; Zhang, Wenhua; Xu, Dongyan

2017-09-01

This paper presents a setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials. The sample holder was designed to have a compact structure and can be directly mounted in a standard cryostat system for temperature-dependent measurements. For the Seebeck coefficient measurement, a thin bar-shaped sample is mounted bridging two copper bases; and two ceramic heaters are used to generate a temperature gradient along the sample. Two type T thermocouples are used to determine both temperature and voltage differences between two widely separated points on the sample. The thermocouple junction is flattened into a disk and pressed onto the sample surface by using a spring load. The flexible fixation method we adopted not only simplifies the sample mounting process but also prevents thermal contact deterioration due to the mismatch of thermal expansion coefficients between the sample and other parts. With certain modifications, the sample holder can also be used for four-probe electrical resistivity measurements. High temperature measurements are essential for thermoelectric power generation. The experimental system we developed is capable of measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials in a wide temperature range from 80 to 500 K, which can be further extended to even higher temperatures. Measurements on two standard materials, constantan and nickel, confirmed the accuracy and the reliability of the system.

Cu, Ag, Au: Electrical Resistivity Along their Melting Boundaries

NASA Astrophysics Data System (ADS)

Secco, R.; Littleton, J. A. H.; Berrada, M.; Ezenwa, I.; Yong, W.

2017-12-01

Electrical resistivity of Cu, Ag and Au was measured at pressures up to 5 GPa and temperatures up to 300 K above melting in a 1000-ton cubic anvil press. Two W/Re thermocouples placed at opposite ends of the wire sample served as T probes as well as 4-wire resistance electrodes in a switched circuit. A polarity switch was also used to remove any bias associated with current flow and voltage measurement using thermocouple legs. Examination of the composition of recovered and sectioned samples was carried out using electron microprobe analyses. Melting temperatures at high pressures were determined from the large jump in resistivity on heating at constant pressure and these agree well with previous experimental and theoretical phase diagram studies. With increasing P and T, electrical resistivity behavior in these noble metals is consistent with 1atm data. The resistivity values at the melting temperature of Cu and Ag decrease with increasing high pressure and Au seems to behave similarly. The results are compared to prediction by Stacey and Anderson (PEPI, 2001).

Apparatus for measuring Seebeck coefficient and electrical resistivity of small dimension samples using infrared microscope as temperature sensor.

PubMed

Jaafar, W M N Wan; Snyder, J E; Min, Gao

2013-05-01

An apparatus for measuring the Seebeck coefficient (α) and electrical resistivity (ρ) was designed to operate under an infrared microscope. A unique feature of this apparatus is its capability of measuring α and ρ of small-dimension (sub-millimeter) samples without the need for microfabrication. An essential part of this apparatus is a four-probe assembly that has one heated probe, which combines the hot probe technique with the Van der Pauw method for "simultaneous" measurements of the Seebeck coefficient and electrical resistivity. The repeatability of the apparatus was investigated over a temperature range of 40 °C-100 °C using a nickel plate as a standard reference. The results show that the apparatus has an uncertainty of ±4.9% for Seebeck coefficient and ±5.0% for electrical resistivity. The standard deviation of the apparatus against a nickel reference sample is -2.43 μVK(-1) (-12.5%) for the Seebeck coefficient and -0.4 μΩ cm (-4.6%) for the electrical resistivity, respectively.

The Effect of Curing Temperature on the Properties of Cement Pastes Modified with TiO2 Nanoparticles

PubMed Central

Pimenta Teixeira, Karine; Perdigão Rocha, Isadora; De Sá Carneiro, Leticia; Flores, Jessica; Dauer, Edward A.; Ghahremaninezhad, Ali

2016-01-01

This paper investigates the effect of curing temperature on the hydration, microstructure, compressive strength, and transport of cement pastes modified with TiO2 nanoparticles. These characteristics of cement pastes were studied using non-evaporable water content measurement, X-ray diffraction (XRD), compressive strength test, electrical resistivity and porosity measurements, and scanning electron microscopy (SEM). It was shown that temperature enhanced the early hydration. The cement pastes cured at elevated temperatures generally showed an increase in compressive strength at an early age compared to the cement paste cured at room temperature, but the strength gain decreased at later ages. The electrical resistivity of the cement pastes cured at elevated temperatures was found to decrease more noticeably at late ages compared to that of the room temperature cured cement paste. SEM examination indicated that hydration product was more uniformly distributed in the microstructure of the cement paste cured at room temperature compared to the cement pastes cured at elevated temperatures. It was observed that high temperature curing decreased the compressive strength and electrical resistivity of the cement pastes at late ages in a more pronounced manner when higher levels of TiO2 nanoparticles were added. PMID:28774073

Fabrication of electrically bistable organic semiconducting/ferroelectric blend films by temperature controlled spin coating.

PubMed

Hu, Jinghang; Zhang, Jianchi; Fu, Zongyuan; Weng, Junhui; Chen, Weibo; Ding, Shijin; Jiang, Yulong; Zhu, Guodong

2015-03-25

Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. During film deposition from the blend solution, spinodal decomposition induced phase separation, resulting in discrete semiconducting phase whose electrical property could be modulated by the continuous ferroelectric phase. However, blend films processed by common spin coating method showed extremely rough surfaces, even comparable to the film thickness, which caused large electrical leakage and thus compromised the resistive switching performance. To improve film roughness and thus increase the productivity of these resistive devices, we developed temperature controlled spin coating technique to carefully adjust the phase separation process. Here we reported our experimental results from the blend films of ferroelectric poly(vinylidene fluoride-trifluoroethylene (P(VDF-TrFE)) and semiconducting poly(3-hexylthiophene) (P3HT). We conducted a series of experiments at various deposition temperatures ranging from 20 to 90 °C. The resulting films were characterized by AFM, SEM, and VPFM to determine their structure and roughness. Film roughness first decreased and then increased with the increase of deposition temperature. Electrical performance was also characterized and obviously improved insulating property was obtained from the films deposited between 50 and 70 °C. By temperature control during film deposition, it is convenient to efficiently fabricate ferroelectric/semiconducting blend films with good electrical bistability.

Thermal protection system ablation sensor

NASA Technical Reports Server (NTRS)

Gorbunov, Sergey (Inventor); Martinez, Edward R. (Inventor); Scott, James B. (Inventor); Oishi, Tomomi (Inventor); Fu, Johnny (Inventor); Mach, Joseph G. (Inventor); Santos, Jose B. (Inventor)

2011-01-01

An isotherm sensor tracks space vehicle temperatures by a thermal protection system (TPS) material during vehicle re-entry as a function of time, and surface recession through calibration, calculation, analysis and exposed surface modeling. Sensor design includes: two resistive conductors, wound around a tube, with a first end of each conductor connected to a constant current source, and second ends electrically insulated from each other by a selected material that becomes an electrically conductive char at higher temperatures to thereby complete an electrical circuit. The sensor conductors become shorter as ablation proceeds and reduced resistance in the completed electrical circuit (proportional to conductor length) is continually monitored, using measured end-to-end voltage change or current in the circuit. Thermocouple and/or piezoelectric measurements provide consistency checks on local temperatures.

Hot wire needle probe for thermal conductivity detection

DOEpatents

Condie, Keith Glenn; Rempe, Joy Lynn; Knudson, Darrell lee; Daw, Joshua Earl; Wilkins, Steven Curtis; Fox, Brandon S.; Heng, Ban

2015-11-10

An apparatus comprising a needle probe comprising a sheath, a heating element, a temperature sensor, and electrical insulation that allows thermal conductivity to be measured in extreme environments, such as in high-temperature irradiation testing. The heating element is contained within the sheath and is electrically conductive. In an embodiment, the heating element is a wire capable of being joule heated when an electrical current is applied. The temperature sensor is contained within the sheath, electrically insulated from the heating element and the sheath. The electrical insulation electrically insulates the sheath, heating element and temperature sensor. The electrical insulation fills the sheath having electrical resistance capable of preventing electrical conduction between the sheath, heating element, and temperature sensor. The control system is connected to the heating element and the temperature sensor.

Water level sensor and temperature profile detector

DOEpatents

Tokarz, Richard D.

1983-01-01

A temperature profile detector comprising a surrounding length of metal tubing and an interior electrical conductor both constructed of high temperature high electrical resistance materials. A plurality of gas-filled expandable bellows made of electrically conductive material is electrically connected to the interior electrical conductor and positioned within the length of metal tubing. The bellows are sealed and contain a predetermined volume of a gas designed to effect movement of the bellows from an open circuit condition to a closed circuit condition in response to monitored temperature changes sensed by each bellows.

Acoustic Levitator With Furnace And Laser Heating

NASA Technical Reports Server (NTRS)

Barmatz, Martin B.; Stoneburner, James D.

1991-01-01

Acoustic-levitation apparatus incorporates electrical-resistance furnace for uniform heating up to temperature of about 1,000 degrees C. Additional local heating by pair of laser beams raise temperature of sample to more than 1,500 degrees C. High temperature single-mode acoustic levitator generates cylindrical-mode accoustic resonance levitating sample. Levitation chamber enclosed in electrical-resistance furnace. Infrared beams from Nd:YAG laser provide additional local heating of sample. Designed for use in containerless processing of materials in microgravity or in normal Earth gravity.

Temperature Coefficient of Resistance.

ERIC Educational Resources Information Center

Fox, John N.

1990-01-01

Described are the apparatus and procedures needed for a demonstration of the measurement of the electrical resistance of metals as a function of temperature using a microcomputer interface. Discussed are materials, apparatus construction, and experimental results. (CW)

The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zha, Gangqiang; Yang, Jian; Xu, Lingyan

2014-01-28

Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance canmore » be explained using the deep trap model.« less

Local Magnetic Measurements of Trapped Flux Through a Permanent Current Path in Graphite

NASA Astrophysics Data System (ADS)

Stiller, Markus; Esquinazi, Pablo D.; Quiquia, José Barzola; Precker, Christian E.

2018-04-01

Temperature- and field-dependent measurements of the electrical resistance of different natural graphite samples suggest the existence of superconductivity at room temperature in some regions of the samples. To verify whether dissipationless electrical currents are responsible for the trapped magnetic flux inferred from electrical resistance measurements, we localized them using magnetic force microscopy on a natural graphite sample in remanent state after applying a magnetic field. The obtained evidence indicates that at room temperature a permanent current flows at the border of the trapped flux region. The current path vanishes at the same transition temperature T_c≈ 370 K as the one obtained from electrical resistance measurements on the same sample. This sudden decrease in the phase is different from what is expected for a ferromagnetic material. Time-dependent measurements of the signal show the typical behavior of flux creep of a permanent current flowing in a superconductor. The overall results support the existence of room-temperature superconductivity at certain regions in the graphite structure and indicate that magnetic force microscopy is suitable to localize them. Magnetic coupling is excluded as origin of the observed phase signal.

Reversion phenomena of Cu-Cr alloys

NASA Technical Reports Server (NTRS)

Nishikawa, S.; Nagata, K.; Kobayashi, S.

1985-01-01

Cu-Cr alloys which were given various aging and reversion treatments were investigated in terms of electrical resistivity and hardness. Transmission electron microscopy was one technique employed. Some results obtained are as follows: the increment of electrical resistivity after the reversion at a constant temperature decreases as the aging temperature rises. In a constant aging condition, the increment of electrical resistivity after the reversion increases, and the time required for a maximum reversion becomes shorter as the reversion temperature rises. The reversion phenomena can be repeated, but its amount decreases rapidly by repetition. At first, the amount of reversion increases with aging time and reaches its maximum, and then tends to decrease again. Hardness changes by the reversion are very small, but the hardness tends to soften slightly. Any changes in transmission electron micrographs by the reversion treatment cannot be detected.

Electrical resistivity of fluid methane multiply shock compressed to 147 GPa

NASA Astrophysics Data System (ADS)

Wang, Yi-Gao; Liu, Fu-Sheng; Liu, Qi-Jun; Wang, Wen-Peng

2018-01-01

Shock wave experiments were carried out to measure the electrical resistivity of fluid methane. The pressure range of 89-147 GPa and the temperature range from 1800 to 2600 K were achieved with a two-stage light-gas gun. We obtained a minimum electrical resistivity value of 4.5 × 10-2 Ω cm at pressure and temperature of 147 GPa and 2600 K, which is two orders of magnitude higher than that of hydrogen under similar conditions. The data are interpreted in terms of a continuous transition from insulator to semiconductor state. One possibility reason is chemical decomposition of methane in the shock compression process. Along density and temperature increase with Hugoniot pressure, dissociation of fluid methane increases continuously to form a H2-rich fluid.

Simultaneous pollutant removal and electricity generation in denitrifying microbial fuel cell with boric acid-borate buffer solution.

PubMed

Chen, Gang; Zhang, Shaohui; Li, Meng; Wei, Yan

2015-01-01

A double-chamber denitrifying microbial fuel cell (MFC), using boric acid-borate buffer solution as an alternative to phosphate buffer solution, was set up to investigate the influence of buffer solution concentration, temperature and external resistance on electricity generation and pollutant removal efficiency. The result revealed that the denitrifying MFC with boric acid-borate buffer solution was successfully started up in 51 days, with a stable cell voltage of 205.1 ± 1.96 mV at an external resistance of 50 Ω. Higher concentration of buffer solution favored nitrogen removal and electricity generation. The maximum power density of 8.27 W/m(3) net cathodic chamber was obtained at a buffer solution concentration of 100 mmol/L. An increase in temperature benefitted electricity generation and nitrogen removal. A suitable temperature for this denitrifying MFC was suggested to be 25 °C. Decreasing the external resistance favored nitrogen removal and organic matter consumption by exoelectrogens.

High temperature static strain measurement with an electrical resistance strain gage

NASA Technical Reports Server (NTRS)

Lei, Jih-Fen

1992-01-01

An electrical resistance strain gage that can supply accurate static strain measurement for NASP application is being developed both in thin film and fine wire forms. This gage is designed to compensate for temperature effects on substrate materials with a wide range of thermal expansion coefficients. Some experimental results of the wire gage tested on one of the NASP structure materials, i.e., titanium matrix composites, are presented.

Electrical properties of multilayer (DLC-TiC) films produced by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Alawajji, Raad A.; Kannarpady, Ganesh K.; Nima, Zeid A.; Kelly, Nigel; Watanabe, Fumiya; Biris, Alexandru S.

2018-04-01

In this work, pulsed laser deposition was used to produce a multilayer diamond like carbon (ML (DLC-TiC)) thin film. The ML (DLC-TiC) films were deposited on Si (100) and glass substrates at various substrate temperatures in the range of 20-450 °C. Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and atomic force microscopy were utilized to characterize the prepared films. Raman analysis revealed that as the substrate temperature increased, the G-peak position shifted to a higher raman shift and the full width at half maximum of the G and D bands decreased. XPS analysis indicated a decrease in sp3/sp2 ratio and an increase in Ti-C bond intensity when the substrate temperature was increased. Additionally, the surface roughness of ML (DLC-TiC) filmswas affected by the type and temperature of the substrate. The electrical measurement results indicated that the electrical resistivity of the ML (DLC-TiC) film deposited on Si and glass substrates showed the same behavior-the resistivity decreased when substrate temperature increased. Furthermore, the ML (DLC-TiC) films deposited on silicon showed lower electrical resistivity, dropping from 8.39E-4 Ω-cm to 5.00E-4 Ω-cm, and, similarly, the films on the glass substrate displayed a drop in electrical resistivity from 1.8E-2 Ω-cm to 1.2E-3 Ω-cm. These enhanced electrical properties indicate that the ML (DLC-TiC) films have widespread potential as transducers for biosensors in biological research; electrochemical electrodes, because these films can be chemically modified; biocompatible coatings for medicals tools; and more.

The effect of temperature and moisture on electrical resistance, strain sensitivity and crack sensitivity of steel fiber reinforced smart cement composite

NASA Astrophysics Data System (ADS)

Teomete, Egemen

2016-07-01

Earthquakes, material degradations and other environmental factors necessitate structural health monitoring (SHM). Metal foil strain gages used for SHM have low durability and low sensitivity. These factors motivated researchers to work on cement based strain sensors. In this study, the effects of temperature and moisture on electrical resistance, compressive and tensile strain gage factors (strain sensitivity) and crack sensitivity were determined for steel fiber reinforced cement based composite. A rapid increase of electrical resistance at 200 °C was observed due to damage occurring between cement paste, aggregates and steel fibers. The moisture—electrical resistance relationship was investigated. The specimens taken out of the cure were saturated with water and had a moisture content of 9.49%. The minimum electrical resistance was obtained at 9% moisture at which fiber-fiber and fiber-matrix contact was maximum and the water in micro voids was acting as an electrolyte, conducting electrons. The variation of compressive and tensile strain gage factors (strain sensitivities) and crack sensitivity were investigated by conducting compression, split tensile and notched bending tests with different moisture contents. The highest gage factor for the compression test was obtained at optimal moisture content, at which electrical resistance was minimum. The tensile strain gage factor for split tensile test and crack sensitivity increased by decreasing moisture content. The mechanisms between moisture content, electrical resistance, gage factors and crack sensitivity were elucidated. The relations of moisture content with electrical resistance, gage factors and crack sensitivities have been presented for the first time in this study for steel fiber reinforced cement based composites. The results are important for the development of self sensing cement based smart materials.

In situ electrical resistivity measurements of vanadium thin films performed in vacuum during different annealing cycles

NASA Astrophysics Data System (ADS)

Pedrosa, Paulo; Cote, Jean-Marc; Martin, Nicolas; Arab Pour Yazdi, Mohammad; Billard, Alain

2017-02-01

The present study describes a sputtering and in situ vacuum electrical resistivity setup that allows a more efficient sputtering-oxidation coupling process for the fabrication of oxide compounds like vanadium dioxide, VO2. After the sputtering deposition of pure V thin films, the proposed setup enables the sample holder to be transferred from the sputtering to the in situ annealing + resistivity chamber without venting the whole system. The thermal oxidation of the V films was studied by implementing two different temperature cycles up to 550 °C, both in air (using a different resistivity setup) and vacuum conditions. Main results show that the proposed system is able to accurately follow the different temperature setpoints, presenting clean and low-noise resistivity curves. Furthermore, it is possible to identify the formation of different vanadium oxide phases in air, taking into account the distinct temperature cycles used. The metallic-like electrical properties of the annealed coatings are maintained in vacuum whereas those heated in air produce a vanadium oxide phase mixture.

In situ electrical resistivity measurements of vanadium thin films performed in vacuum during different annealing cycles.

PubMed

Pedrosa, Paulo; Cote, Jean-Marc; Martin, Nicolas; Arab Pour Yazdi, Mohammad; Billard, Alain

2017-02-01

The present study describes a sputtering and in situ vacuum electrical resistivity setup that allows a more efficient sputtering-oxidation coupling process for the fabrication of oxide compounds like vanadium dioxide, VO 2 . After the sputtering deposition of pure V thin films, the proposed setup enables the sample holder to be transferred from the sputtering to the in situ annealing + resistivity chamber without venting the whole system. The thermal oxidation of the V films was studied by implementing two different temperature cycles up to 550 °C, both in air (using a different resistivity setup) and vacuum conditions. Main results show that the proposed system is able to accurately follow the different temperature setpoints, presenting clean and low-noise resistivity curves. Furthermore, it is possible to identify the formation of different vanadium oxide phases in air, taking into account the distinct temperature cycles used. The metallic-like electrical properties of the annealed coatings are maintained in vacuum whereas those heated in air produce a vanadium oxide phase mixture.

Sialons as high temperature insulators

NASA Technical Reports Server (NTRS)

Phillips, W. M.; Kuo, Y. S.

1978-01-01

Sialons were evaluated for application as high temperature electrical insulators in contact with molybdenum and tungsten components in hard vacuum applications. Both D.C. and variable frequency A.C. resistivity data indicate the sialons to have electrical resistivity similar to common oxide in the 1000 C or higher range. Metallographic evaluations indicate good bonding of the type 15R ALN polytype to molybdenum and tungsten. The beta prime or modified silicon nitride phase was unacceptable in terms of vacuum stability. Additives effect on electrical resistivity. Similar resistivity decreases were produced by additions of molybdenum or tungsten to form cermets. The use of hot pressing at 1800 C with ALN, Al2 O3 and Si3N4 starting powders produced a better product than did a combination of SiO2 and AIN staring powders. It was indicated that sialons will be suitable insulators in the 1600K range in contact with molybdenum or tungsten if they are produced as a pure ceramic and subsequently bonded to the metal components at temperatures in the 1600K range.

Changes in electrical and thermal parameters of led packages under different current and heating stresses

NASA Astrophysics Data System (ADS)

Jayawardena, Adikaramge Asiri

The goal of this dissertation is to identify electrical and thermal parameters of an LED package that can be used to predict catastrophic failure real-time in an application. Through an experimental study the series electrical resistance and thermal resistance were identified as good indicators of contact failure of LED packages. This study investigated the long-term changes in series electrical resistance and thermal resistance of LED packages at three different current and junction temperature stress conditions. Experiment results showed that the series electrical resistance went through four phases of change; including periods of latency, rapid increase, saturation, and finally a sharp decline just before failure. Formation of voids in the contact metallization was identified as the underlying mechanism for series resistance increase. The rate of series resistance change was linked to void growth using the theory of electromigration. The rate of increase of series resistance is dependent on temperature and current density. The results indicate that void growth occurred in the cap (Au) layer, was constrained by the contact metal (Ni) layer, preventing open circuit failure of contact metal layer. Short circuit failure occurred due to electromigration induced metal diffusion along dislocations in GaN. The increase in ideality factor, and reverse leakage current with time provided further evidence to presence of metal in the semiconductor. An empirical model was derived for estimation of LED package failure time due to metal diffusion. The model is based on the experimental results and theories of electromigration and diffusion. Furthermore, the experimental results showed that the thermal resistance of LED packages increased with aging time. A relationship between thermal resistance change rate, with case temperature and temperature gradient within the LED package was developed. The results showed that dislocation creep is responsible for creep induced plastic deformation in the die-attach solder. The temperatures inside the LED package reached the melting point of die-attach solder due to delamination just before catastrophic open circuit failure. A combined model that could estimate life of LED packages based on catastrophic failure of thermal and electrical contacts is presented for the first time. This model can be used to make a-priori or real-time estimation of LED package life based on catastrophic failure. Finally, to illustrate the usefulness of the findings from this thesis, two different implementations of real-time life prediction using prognostics and health monitoring techniques are discussed.

Specific features of electrical properties of porous biocarbons prepared from beech wood and wood artificial fiberboards

NASA Astrophysics Data System (ADS)

Popov, V. V.; Orlova, T. S.; Magarino, E. Enrique; Bautista, M. A.; Martínez-Fernández, J.

2011-02-01

This paper reports on comparative investigations of the structural and electrical properties of biomorphic carbons prepared from natural beech wood, as well as medium-density and high-density fiberboards, by means of carbonization at different temperatures T carb in the range 650-1000°C. It has been demonstrated using X-ray diffraction analysis that biocarbons prepared from medium-density and high-density fiberboards at all temperatures T carb contain a nanocrystalline graphite component, namely, three-dimensional crystallites 11-14 Å in size. An increase in the carbonization temperature T carb to 1000°C leads to the appearance of a noticeable fraction of two-dimensional graphene particles with the same sizes. The temperature dependences of the electrical resistivity ρ of the biomorphic carbons have been measured and analyzed in the temperature range 1.8-300 K. For all types of carbons under investigation, an increase in the carbonization temperature T carb from 600 to 900°C leads to a change in the electrical resistivity at T = 300 K by five or six orders of magnitude. The dependences ρ( T) for these materials are adequately described by the Mott law for the variable-range hopping conduction. It has been revealed that the temperature dependence of the electrical resistivity exhibits a hysteresis, which has been attributed to thermomechanical stresses in an inhomogeneous structure of the biocarbon prepared at a low carbonization temperature T carb. The crossover to the conductivity characteristic of disordered metal systems is observed at T carb ≳ 1000°C.

Zero temperature coefficient of resistance of the electrical-breakdown path in ultrathin hafnia

NASA Astrophysics Data System (ADS)

Zhang, H. Z.; Ang, D. S.

2017-09-01

The recent widespread attention on the use of the non-volatile resistance switching property of a microscopic oxide region after electrical breakdown for memory applications has prompted basic interest in the conduction properties of the breakdown region. Here, we report an interesting crossover from a negative to a positive temperature dependence of the resistance of a breakdown region in ultrathin hafnia as the applied voltage is increased. As a consequence, a near-zero temperature coefficient of resistance is obtained at the crossover voltage. The behavior may be modeled by (1) a tunneling-limited transport involving two farthest-spaced defects along the conduction path at low voltage and (2) a subsequent transition to a scattering-limited transport after the barrier is overcome by a larger applied voltage.

Antimony-Doped Tin Oxide Thin Films Grown by Home Made Spray Pyrolysis Technique

NASA Astrophysics Data System (ADS)

Yusuf, Gbadebo; Babatola, Babatunde Keji; Ishola, Abdulahi Dimeji; Awodugba, Ayodeji O.; Solar cell Collaboration

2016-03-01

Transparent conducting antimony-doped tin oxide (ATO) films have been deposited on glass substrates by home made spray pyrolysis technique. The structural, electrical and optical properties of the ATO films have been investigated as a function of Sb-doping level and annealing temperature. The optimum target composition for high conductivity and low resistivity was found to be 20 wt. % SnSb2 + 90 wt. ATO. Under optimized deposition conditions of 450oC annealing temperature, electrical resistivity of 5.2×10-4 Ω -cm, sheet resistance of 16.4 Ω/sq, average optical transmittance of 86% in the visible range, and average optical band-gap of 3.34eV were obtained. The film deposited at lower annealing temperature shows a relatively rough, loosely bound slightly porous surface morphology while the film deposited at higher annealing temperature shows uniformly distributed grains of greater size. Keywords: Annealing, Doping, Homemade spray pyrolysis, Tin oxide, Resistivity

Auger electron spectroscopy study of oxidation of a PdCr alloy used for high-temperature sensors

NASA Technical Reports Server (NTRS)

Boyd, Darwin L.; Zeller, Mary V.; Vargas-Aburto, Carlos

1993-01-01

A Pd-13 wt. percent Cr solid solution is a promising high-temperature strain gage alloy. In bulk form it has a number of properties that are desirable in a resistance strain gage material, such as a linear electrical resistance versus temperature curve to 1000 C and stable electrical resistance in air at 1000 C. However, unprotected fine wire gages fabricated from this alloy perform well only to 600 C. At higher temperatures severe oxidation degrades their electrical performance. In this work Auger electron spectroscopy was used to study the oxidation chemistry of the alloy wires and ribbons. Results indicate that the oxidation is caused by a complex mechanism that is not yet fully understood. As expected, during oxidation, a layer of chromium oxide is formed. This layer, however, forms beneath a layer of metallic palladium. The results of this study have increased the understanding of the oxidation mechanism of Pd-13 wt. percent Cr.

Neutron diffraction and electrical transport studies on magnetic ordering in terbium at high pressures and low temperatures

DOE PAGES

Thomas, Sarah A.; Montgomery, Jeffrey M.; Tsoi, Georgiy M.; ...

2013-06-11

Neutron diffraction and electrical transport measurements have been carried out on the heavy rare earth metal terbium at high pressures and low temperatures in order to elucidate the onset of ferromagnetic order as a function of pressure. The electrical resistance measurements show a change in slope as the temperature is lowered through the ferromagnetic Curie temperature. The temperature of this ferromagnetic transition decreases from approximately 240 K at ambient pressure at a rate of –16.7 K/GPa up to a pressure of 3.6 GPa, at which point the onset of ferromagnetic order is suppressed. Neutron diffraction measurements as a function ofmore » pressure at temperatures ranging from 90 K to 290 K confirm that the change of slope in the resistance is associated with the ferromagnetic ordering, since this occurs at pressures similar to those determined from the resistance results at these temperatures. Furthermore, a change in ferromagnetic ordering as the pressure is increased above 3.6 GPa is correlated with the phase transition from the ambient hexagonal close packed (hcp) structure to an α-Sm type structure at high pressures.« less

Electrical resistivity and thermal conductivity of hcp Fe-Ni alloys under high pressure: Implications for thermal convection in the Earth's core

NASA Astrophysics Data System (ADS)

Gomi, Hitoshi; Hirose, Kei

2015-10-01

We measured the electrical resistivity of Fe-Ni alloys (iron with 5, 10, and 15 wt.% nickel) using four-terminal method in a diamond-anvil cell up to 70 GPa at 300 K. The results demonstrate that measured resistivity increases linearly with increasing nickel impurity concentration, as predicted by the Matthiessen's rule. The impurity resistivity is predominant at ambient temperature; the incorporation of 5 wt.% nickel into iron doubles the electrical resistivity at 60 GPa. Such impurity effect becomes minor at high temperature of the Earth's core because of the resistivity "saturation". We also calculated that >0.9 TW heat flow is necessary at the top of the inner core for thermal convection in the inner core. It requires the CMB heat flow of ∼30 TW, which is much higher than recent estimates of 5-15 TW. This means that purely thermal convection does not occur in the inner core.

Electrical resistivity of substitutionally disordered hcp Fe-Si and Fe-Ni alloys: Chemically-induced resistivity saturation in the Earth's core

NASA Astrophysics Data System (ADS)

Gomi, Hitoshi; Hirose, Kei; Akai, Hisazumi; Fei, Yingwei

2016-10-01

The thermal conductivity of the Earth's core can be estimated from its electrical resistivity via the Wiedemann-Franz law. However, previously reported resistivity values are rather scattered, mainly due to the lack of knowledge with regard to resistivity saturation (violations of the Bloch-Grüneisen law and the Matthiessen's rule). Here we conducted high-pressure experiments and first-principles calculations in order to clarify the relationship between the resistivity saturation and the impurity resistivity of substitutional silicon in hexagonal-close-packed (hcp) iron. We measured the electrical resistivity of Fe-Si alloys (iron with 1, 2, 4, 6.5, and 9 wt.% silicon) using four-terminal method in a diamond-anvil cell up to 90 GPa at 300 K. We also computed the electronic band structure of substitutionally disordered hcp Fe-Si and Fe-Ni alloy systems by means of Korringa-Kohn-Rostoker method with coherent potential approximation (KKR-CPA). The electrical resistivity was then calculated from the Kubo-Greenwood formula. These experimental and theoretical results show excellent agreement with each other, and the first principles results show the saturation behavior at high silicon concentration. We further calculated the resistivity of Fe-Ni-Si ternary alloys and found the violation of the Matthiessen's rule as a consequence of the resistivity saturation. Such resistivity saturation has important implications for core dynamics. The saturation effect places the upper limit of the resistivity, resulting in that the total resistivity value has almost no temperature dependence. As a consequence, the core thermal conductivity has a lower bound and exhibits a linear temperature dependence. We predict the electrical resistivity at the top of the Earth's core to be 1.12 ×10-6 Ωm, which corresponds to the thermal conductivity of 87.1 W/m/K. Such high thermal conductivity suggests high isentropic heat flow, leading to young inner core age (<0.85 Gyr old) and high initial core temperature. It also strongly suppresses thermal convection in the core, which results in no convective motion in inner core and possibly thermally stratified layer in the outer core.

High temperature sensor

DOEpatents

Tokarz, Richard D.

1982-01-01

A high temperature sensor includes a pair of electrical conductors separated by a mass of electrical insulating material. The insulating material has a measurable resistivity within the sensor that changes in relation to the temperature of the insulating material within a high temperature range (1,000 to 2,000 K.). When required, the sensor can be encased within a ceramic protective coating.

The aging correlation (RH + t): Relative humidity (%) + temperature (deg C)

NASA Technical Reports Server (NTRS)

Cuddihy, E. F.

1986-01-01

An aging correlation between corrosion lifetime, and relative humidity RH (%) and temperature t (C) has been reported in the literature. This aging correlation is a semi-log plot of corrosion lifetime on the log scale versus the interesting summation term RH(%) + t(C) on the linear scale. This empirical correlation was derived from observation of experimental data trends and has been referred to as an experimental law. Using electrical resistivity data of polyvinyl butyral (PVB) measured as a function of relative humidity and temperature, it was found that the electrical resistivity could be expressed as a function of the term RH(%) t(C). Thus, if corrosion is related to leakage current through an organic insulator, which, in turn, is a function of RH and t, then some partial theoretical validity for the correlation is indicated. This article describes the derivation of the term RH(%) t(C) from PVB electrical resistivity data.

Contact Sensor Attachment to Titanium Metal Composites

NASA Technical Reports Server (NTRS)

Vargas-Aburto, Carlos

1997-01-01

A Pd-13wt%Cr solid solution is a promising high-temperature strain gage alloy. In bulk form it has a number of properties that are desirable in a resistance strain gage material, such as a linear electrical-resistance-versus-temperature curve to 1000 C and stable electrical resistance in air at 1000 C. However, unprotected fine wire gages fabricated from this alloy perform well only to 600 C. At higher temperatures severe oxidation degrades their electrical performance. In this work Auger electron spectroscopy has been used to study the oxidation chemistry of the alloy wires and ribbons. Results indicate that the oxidation is caused by a complex mechanism that is not yet fully understood. As expected, during oxidation, a layer of chromium oxide is formed. This layer, however, forms beneath a layer of metallic palladium. The results of this study have increased the understanding of the oxidation mechanism of Pd-13wt%Cr.

Electrical Switching of Perovskite Thin-Film Resistors

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Juan; Ignatiev, Alex

2010-01-01

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Electrical Resistance Technique to Monitor SiC Composite Detection

NASA Technical Reports Server (NTRS)

Smith, Craig; Morscher, Gregory; Xia, Zhenhai

2008-01-01

Ceramic matrix composites are suitable for high temperature structural applications such as turbine airfoils and hypersonic thermal protection systems. The employment of these materials in such applications is limited by the ability to process components reliable and to accurately monitor and predict damage evolution that leads to failure under stressed-oxidation conditions. Current nondestructive methods such as ultrasound, x-ray, and thermal imaging are limited in their ability to quantify small scale, transverse, in-plane, matrix cracks developed over long-time creep and fatigue conditions. Electrical resistance of SiC/SiC composites is one technique that shows special promise towards this end. Since both the matrix and the fibers are conductive, changes in matrix or fiber properties should relate to changes in electrical conductivity along the length of a specimen or part. The effect of matrix cracking on electrical resistivity for several composite systems will be presented and some initial measurements performed at elevated temperatures under stress-rupture conditions. The implications towards electrical resistance as a technique applied to composite processing, damage detection (health monitoring), and life-modeling will be discussed.

Automated High-Temperature Hall-Effect Apparatus

NASA Technical Reports Server (NTRS)

Parker, James B.; Zoltan, Leslie D.

1992-01-01

Automated apparatus takes Hall-effect measurements of specimens of thermoelectric materials at temperatures from ambient to 1,200 K using computer control to obtain better resolution of data and more data points about three times as fast as before. Four-probe electrical-resistance measurements taken in 12 electrical and 2 magnetic orientations to characterize specimens at each temperature. Computer acquires data, and controls apparatus via three feedback loops: one for temperature, one for magnetic field, and one for electrical-potential data.

Improved contact resistance stability in a MEMS separable electrical connector

NASA Astrophysics Data System (ADS)

Larsson, M. P.

2005-12-01

A MEMS in-line separable electrical connector with improved contact resistance stability to thermal fluctuations and mating cycles is described. The design allows sliding, in-line connection between separate halves, inducing vertical deflections on a set of flexible conductors to establish stable electrical contacts. Features are present on both halves to ensure precise lateral and vertical self-alignment; preventing shorts and maintaining consistent conductor deflections. Characterisation on early prototypes revealed significant variability in contact resistance with thermal fluctuations and mating cycle history. As flexible conductors are multi-layered structures of Au supported by a thick structural layer of Ni, they undergo differential thermal expansion, introducing variability in contact resistance with temperature. Sliding contact wear during repeated mating leads to removal of portions of the Au surface coating, and electrical contact between underlying (non-noble) Ni layers. By using a harder Co-Au alloy as the contact surface layer and modifying the arrangement of constituent conductor layers to balance thermal stresses, improvements to both wear and thermal tolerance of contact resistance can be obtained. Devices implementing the above design modifications show stable contact resistance over 100 mating cycles and an increase in contact resistance of between 3.5 and 7% over a temperature rise of 60°C. The electrical performance improvements increase the attractiveness of the MEMS in-line separable connector concept for applications in portable electronics and MEMS integration.

Noncontact technique for measuring the electrical resistivity and magnetic susceptibility of electrostatically levitated materials

NASA Astrophysics Data System (ADS)

Rustan, G. E.; Spyrison, N. S.; Kreyssig, A.; Prozorov, R.; Goldman, A. I.

2012-10-01

We describe the development of a new method for measuring the electrical resistivity and magnetic susceptibility of high temperature liquids and solids. The technique combines a tunnel diode oscillator with an electrostatic levitation furnace to perform noncontact measurements on spherical samples 2-3 mm in diameter. The tank circuit of the oscillator is inductively coupled to the sample, and measurements of the oscillator frequency as a function of sample temperature can be translated into changes in the sample's electrical resistivity and magnetic susceptibility. Particular emphasis is given on the need to improve the positional stability of the levitated samples, as well as the need to stabilize the temperature of the measurement coil. To demonstrate the validity of the technique, measurements have been performed on solid spheres of pure zirconium and low-carbon steel. In the case of zirconium, while absolute values of the resistivity were not determined, the temperature dependence of the resistivity was measured over the range of 640-1770 K and found to be in good agreement with literature data. In the case of low-carbon steel, the ferromagnetic-paramagnetic transition was clearly observable and, when combined with thermal data, appears to occur simultaneously with the solid-solid structural transition.

Non-volatile, solid state bistable electrical switch

NASA Technical Reports Server (NTRS)

Williams, Roger M. (Inventor)

1994-01-01

A bistable switching element is made of a material whose electrical resistance reversibly decreases in response to intercalation by positive ions. Flow of positive ions between the bistable switching element and a positive ion source is controlled by means of an electrical potential applied across a thermal switching element. The material of the thermal switching element generates heat in response to electrical current flow therethrough, which in turn causes the material to undergo a thermal phase transition from a high electrical resistance state to a low electrical resistance state as the temperature increases above a predetermined value. Application of the electrical potential in one direction renders the thermal switching element conductive to pass electron current out of the ion source. This causes positive ions to flow from the source into the bistable switching element and intercalate the same to produce a non-volatile, low resistance logic state. Application of the electrical potential in the opposite direction causes reverse current flow which de-intercalates the bistable logic switching element and produces a high resistance logic state.

Electrical resistivity and thermal conductivity of liquid aluminum in the two-temperature state

NASA Astrophysics Data System (ADS)

Petrov, Yu V.; Inogamov, N. A.; Mokshin, A. V.; Galimzyanov, B. N.

2018-01-01

The electrical resistivity and thermal conductivity of liquid aluminum in the two-temperature state is calculated by using the relaxation time approach and structural factor of ions obtained by molecular dynamics simulation. Resistivity witin the Ziman-Evans approach is also considered to be higher than in the approach with previously calculated conductivity via the relaxation time. Calculations based on the construction of the ion structural factor through the classical molecular dynamics and kinetic equation for electrons are more economical in terms of computing resources and give results close to the Kubo-Greenwood with the quantum molecular dynamics calculations.

Electrical resistivity of the UAs 1- xSex solid solutions

NASA Astrophysics Data System (ADS)

Breandon, C.; Bartholin, H.; Tchapoutian, R.; Therond, P. G.; Schoenes, J.; Vogt, O.

1987-01-01

The electrical resistivity ϱ of UAs 1- xSex solid solutions has been measured between 13 K and room temperature. The magnetic phase diagram has been deduced. Effects of uniaxial stress on ϱ allow to understand some results and to reveal anisotropy of ϱ.

Electrical transport properties in Co nanocluster-assembled granular film

NASA Astrophysics Data System (ADS)

Zhang, Qin-Fu; Wang, Lai-Sen; Wang, Xiong-Zhi; Zheng, Hong-Fei; Liu, Xiang; Xie, Jia; Qiu, Yu-Long; Chen, Yuanzhi; Peng, Dong-Liang

2017-03-01

A Co nanocluster-assembled granular film with three-dimensional cross-connection paralleled conductive paths was fabricated by using the plasma-gas-condensation method in a vacuum environment. The temperature-dependent longitudinal resistivity and anomalous Hall effect of this new type granular film were systematically studied. The longitudinal resistivity of the Co nanocluster-assembled granular film first decreased and then increased with increasing measuring temperature, revealing a minimum value at certain temperature, T min . In a low temperature region ( T < T min ), the barrier between adjacent nanoclusters governed the electrical transport process, and the temperature coefficient of resistance (TCR) showed an insulator-type behavior. The thermal fluctuation-induced tunneling conduction progressively increased with increasing temperature, which led to a decrease in the longitudinal resistivity. In a high temperature region, the TCR showed a metallic-type behavior, which was primarily attributed to the temperature-dependent scattering. Different from the longitudinal resistivity behavior, the saturated anomalous Hall resistivity increased monotonically with increasing measuring temperature. The value of the anomalous Hall coefficient ( R S ) reached 2.3 × 10-9 (Ω cm)/G at 300 K, which was about three orders of magnitude larger than previously reported in blocky single-crystal Co [E. N. Kondorskii, Sov. Phys. JETP 38, 977 (1974)]. Interestingly, the scaling relation ( ρx y A ∝ ρx x γ ) between saturated anomalous Hall resistivity ( ρx y A ) and longitudinal resistivity ( ρ x x ) was divided into two regions by T min . However, after excluding the contribution of tunneling, the scaling relation followed the same rule. The corresponding physical mechanism was also proposed to explain these phenomena.

Small temperature coefficient of resistivity of graphene/graphene oxide hybrid membranes.

PubMed

Sun, Pengzhan; Zhu, Miao; Wang, Kunlin; Zhong, Minlin; Wei, Jinquan; Wu, Dehai; Zhu, Hongwei

2013-10-09

Materials with low temperature coefficient of resistivity (TCR) are of great importance in some areas, for example, highly accurate electronic measurement instruments and microelectronic integrated circuits. In this work, we demonstrated the ultrathin graphene-graphene oxide (GO) hybrid films prepared by layer-by-layer assembly with very small TCR (30-100 °C) in the air. Electrical response of the hybrid films to temperature variation was investigated along with the progressive reduction of GO sheets. The mechanism of electrical response to temperature variation of the hybrid film was discussed, which revealed that the interaction between graphene and GO and the chemical doping effect were responsible for the tunable control of its electrical response to temperature variation. The unique properties of graphene-GO hybrid film made it a promising candidate in many areas, such as high-end film electronic device and sensor applications.

High-temperature sensor

DOEpatents

Not Available

1981-01-29

A high temperature sensor is described which includes a pair of electrical conductors separated by a mass of electrical insulating material. The insulating material has a measurable resistivity within the sensor that changes in relation to the temperature of the insulating material within a high temperature range (1000 to 2000/sup 0/K). When required, the sensor can be encased within a ceramic protective coating.

Electro-thermal analysis of contact resistance

NASA Astrophysics Data System (ADS)

Pandey, Nitin; Jain, Ishant; Reddy, Sudhakar; Gulhane, Nitin P.

2018-05-01

Electro-Mechanical characterization over copper samples are performed at the macroscopic level to understand the dependence of electrical contact resistance and temperature on surface roughness and contact pressure. For two different surface roughness levels of samples, six levels of load are selected and varied to capture the bulk temperature rise and electrical contact resistance. Accordingly, the copper samples are modelled and analysed using COMSOLTM as a simulation package and the results are validated by the experiments. The interface temperature during simulation is obtained using Mikic-Elastic correlation and by directly entering experimental contact resistance value. The load values are varied and then reversed in a similar fashion to capture the hysteresis losses. The governing equations & assumptions underlying these models and their significance are examined & possible justification for the observed variations are discussed. Equivalent Greenwood model is also predicted by mapping the results of the experiment.

The structural and electrical properties of polycrystalline La0.8Ca0.17Ag0.03MnO3 manganites

NASA Astrophysics Data System (ADS)

Ruli, F.; Kurniawan, B.; Imaduddin, A.

2018-04-01

In this paper, the authors report the electrical properties of polycrystalline La0.8Ca0.17Ag0.03MnO3 manganites synthesized using sol-gel method. The X-ray diffraction (XRD) patterns of polycrystalline La0.8Ca0.17Ag0.03MnO3 samples reveal an orthorhombic perovskite structure with Pnma space group. Analysis using energy dispersive X-ray (EDX) confirms that the sample contains all expected chemical elements without any additional impurity. The measurement of resistivity versus temperature using cryogenic magnetometer was performed to investigate the electrical properties. The results show that the electrical resistivity of polycrystalline La0.8Ca0.17Ag0.03MnO3 exhibits metalic behavior below 244 K. The temperature dependence of electrical resistivity dominantly emanates from electron-electron scattering and the grain/domain boundary play a important role in conduction mechanism in polycrystalline La0.8Ca0.17Ag0.03MnO3.

Electrical Resistance of Ceramic Matrix Composites for Damage Detection and Life-Prediction

NASA Technical Reports Server (NTRS)

Smith, Craig; Morscher, Gregory N.; Xia, Zhenhai

2008-01-01

The electric resistance of woven SiC fiber reinforced SiC matrix composites were measured under tensile loading conditions. The results show that the electrical resistance is closely related to damage and that real-time information about the damage state can be obtained through monitoring of the resistance. Such self-sensing capability provides the possibility of on-board/in-situ damage detection or inspection of a component during "down time". The correlation of damage with appropriate failure mechanism can then be applied to accurate life prediction for high-temperature ceramic matrix composites.

49 CFR 195.106 - Internal design pressure.

Code of Federal Regulations, 2013 CFR

2013-10-01

... temperature higher than 900 °F (482 °C) for any period of time or over 600 °F (316 °C) for more than 1 hour... 1.00 Electric resistance welded 1.00 Furnace lap welded 0.80 Furnace butt welded 0.60 ASTM A106... 1.00 API 5L Seamless 1.00 Electric resistance welded 1.00 Electric flash welded 1.00 Submerged arc...

46 CFR 63.25-3 - Electric hot water supply boilers.

Code of Federal Regulations, 2013 CFR

2013-10-01

... boilers that meet the requirements of UL 174 may have temperature-pressure relief valves that meet the... having a current rating of more than 48 amperes and employing resistance type heating elements must have... supply boiler employing a resistance type immersion electric heating element, must not exceed 48 amperes...

46 CFR 63.25-3 - Electric hot water supply boilers.

Code of Federal Regulations, 2012 CFR

2012-10-01

... boilers that meet the requirements of UL 174 may have temperature-pressure relief valves that meet the... having a current rating of more than 48 amperes and employing resistance type heating elements must have... supply boiler employing a resistance type immersion electric heating element, must not exceed 48 amperes...

46 CFR 63.25-3 - Electric hot water supply boilers.

Code of Federal Regulations, 2014 CFR

2014-10-01

... boilers that meet the requirements of UL 174 may have temperature-pressure relief valves that meet the... having a current rating of more than 48 amperes and employing resistance type heating elements must have... supply boiler employing a resistance type immersion electric heating element, must not exceed 48 amperes...

Polymer quenched prealloyed metal powder

DOEpatents

Hajaligol, Mohammad R.; Fleischhauer, Grier; German, Randall M.

2001-01-01

A powder metallurgical process of preparing a sheet from a powder having an intermetallic alloy composition such as an iron, nickel or titanium aluminide. The sheet can be manufactured into electrical resistance heating elements having improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The iron aluminide has an entirely ferritic microstructure which is free of austenite and can include, in weight %, 4 to 32% Al, and optional additions such as .ltoreq.1% Cr, .gtoreq.0.05% Zr .ltoreq.2% Ti, .ltoreq.2% Mo, .ltoreq.1% Ni, .ltoreq.0.75% C, .ltoreq.0.1% B, .ltoreq.1% submicron oxide particles and/or electrically insulating or electrically conductive covalent ceramic particles, .ltoreq.1% rare earth metal, and/or .ltoreq.3 % Cu. The process includes forming a non-densified metal sheet by consolidating a powder having an intermetallic alloy composition such as by roll compaction, tape casting or plasma spraying, forming a cold rolled sheet by cold rolling the non-densified metal sheet so as to increase the density and reduce the thickness thereof and annealing the cold rolled sheet. The powder can be a water, polymer or gas atomized powder which is subjecting to sieving and/or blending with a binder prior to the consolidation step. After the consolidation step, the sheet can be partially sintered. The cold rolling and/or annealing steps can be repeated to achieve the desired sheet thickness and properties. The annealing can be carried out in a vacuum furnace with a vacuum or inert atmosphere. During final annealing, the cold rolled sheet recrystallizes to an average grain size of about 10 to 30 .mu.m. Final stress relief annealing can be carried out in the B2 phase temperature range.

Method of manufacturing aluminide sheet by thermomechanical processing of aluminide powders

DOEpatents

Hajaligol, Mohammad R.; Scorey, Clive; Sikka, Vinod K.; Deevi, Seetharama C.; Fleishhauer, Grier; Lilly, Jr., A. Clifton; German, Randall M.

2003-12-09

A powder metallurgical process of preparing a sheet from a powder having an intermetallic alloy composition such as an iron, nickel or titanium aluminide. The sheet can be manufactured into electrical resistance heating elements having improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The iron aluminide has an entirely ferritic microstructure which is free of austenite and can include, in weight %, 4 to 32% Al, and optional additions such as .ltoreq.1% Cr, .gtoreq.0.05% Zr .ltoreq.2% Ti, .ltoreq.2% Mo, .ltoreq.1% Ni, .ltoreq.0.75% C, .ltoreq.0.1% B, .ltoreq.1% submicron oxide particles and/or electrically insulating or electrically conductive covalent ceramic particles, .ltoreq.1% rare earth metal, and/or .ltoreq.3% Cu. The process includes forming a non-densified metal sheet by consolidating a powder having an intermetallic alloy composition such as by roll compaction, tape casting or plasma spraying, forming a cold rolled sheet by cold rolling the non-densified metal sheet so as to increase the density and reduce the thickness thereof and annealing the cold rolled sheet. The powder can be a water, polymer or gas atomized powder which is subjecting to sieving and/or blending with a binder prior to the consolidation step. After the consolidation step, the sheet can be partially sintered. The cold rolling and/or annealing steps can be repeated to achieve the desired sheet thickness and properties. The annealing can be carried out in a vacuum furnace with a vacuum or inert atmosphere. During final annealing, the cold rolled sheet recrystallizes to an average grain size of about 10 to 30 .mu.m. Final stress relief annealing can be carried out in the B2 phase temperature range.

Thermomechanical processing of plasma sprayed intermetallic sheets

DOEpatents

Hajaligol, Mohammad R.; Scorey, Clive; Sikka, Vinod K.; Deevi, Seetharama C.; Fleischhauer, Grier; Lilly, Jr., A. Clifton; German, Randall M.

2001-01-01

A powder metallurgical process of preparing a sheet from a powder having an intermetallic alloy composition such as an iron, nickel or titanium aluminide. The sheet can be manufactured into electrical resistance heating elements having improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The iron aluminide has an entirely ferritic microstructure which is free of austenite and can include, in weight %, 4 to 32% Al, and optional additions such as .ltoreq.1% Cr, .gtoreq.0.05% Zr .ltoreq.2% Ti, .ltoreq.2% Mo, .ltoreq.1% Ni, .ltoreq.0.75% C, .ltoreq.0.1% B, .ltoreq.1% submicron oxide particles and/or electrically insulating or electrically conductive covalent ceramic particles, .ltoreq.1% rare earth metal, and/or .ltoreq.3% Cu. The process includes forming a non-densified metal sheet by consolidating a powder having an intermetallic alloy composition such as by roll compaction, tape casting or plasma spraying, forming a cold rolled sheet by cold rolling the non-densified metal sheet so as to increase the density and reduce the thickness thereof and annealing the cold rolled sheet. The powder can be a water, polymer or gas atomized powder which is subjecting to sieving and/or blending with a binder prior to the consolidation step. After the consolidation step, the sheet can be partially sintered. The cold rolling and/or annealing steps can be repeated to achieve the desired sheet thickness and properties. The annealing can be carried out in a vacuum furnace with a vacuum or inert atmosphere. During final annealing, the cold rolled sheet recrystallizes to an average grain size of about 10 to 30 .mu.m. Final stress relief annealing can be carried out in the B2 phase temperature range.

Method of manufacturing aluminide sheet by thermomechanical processing of aluminide powders

DOEpatents

Hajaligol, Mohammad R.; Scorey, Clive; Sikka, Vinod K.; Deevi, Seetharama C.; Fleischhauer, Grier; Lilly, Jr., A. Clifton; German, Randall M.

2000-01-01

A powder metallurgical process of preparing a sheet from a powder having an intermetallic alloy composition such as an iron, nickel or titanium aluminide. The sheet can be manufactured into electrical resistance heating elements having improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The iron aluminide has an entirely ferritic microstructure which is free of austenite and can include, in weight %, 4 to 32% Al, and optional additions such as .ltoreq.1% Cr, .gtoreq.0.05% Zr.ltoreq.2% Ti, .ltoreq.2% Mo, .ltoreq.1% Ni, .ltoreq.0.75% C, .ltoreq.0.1% B, .ltoreq.1% submicron oxide particles and/or electrically insulating or electrically conductive covalent ceramic particles, .ltoreq.1% rare earth metal, and/or .ltoreq.3% Cu. The process includes forming a non-densified metal sheet by consolidating a powder having an intermetallic alloy composition such as by roll compaction, tape casting or plasma spraying, forming a cold rolled sheet by cold rolling the non-densified metal sheet so as to increase the density and reduce the thickness thereof and annealing the cold rolled sheet. The powder can be a water, polymer or gas atomized powder which is subjecting to sieving and/or blending with a binder prior to the consolidation step. After the consolidation step, the sheet can be partially sintered. The cold rolling and/or annealing steps can be repeated to achieve the desired sheet thickness and properties. The annealing can be carried out in a vacuum furnace with a vacuum or inert atmosphere. During final annealing, the cold rolled sheet recrystallizes to an average grain size of about 10 to 30 .mu.m. Final stress relief annealing can be carried out in the B2 phase temperature range.

Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities.

PubMed

Lin, Yen-Fu; Chang, Chia-Hung; Hung, Tsu-Chang; Jian, Wen-Bin; Tsukagoshi, Kazuhito; Wu, Yue-Han; Chang, Li; Liu, Zhaoping; Fang, Jiye

2015-08-11

To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott's variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics.

Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities

PubMed Central

Lin, Yen-Fu; Chang, Chia-Hung; Hung, Tsu-Chang; Jian, Wen-Bin; Tsukagoshi, Kazuhito; Wu, Yue-Han; Chang, Li; Liu, Zhaoping; Fang, Jiye

2015-01-01

To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott’s variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics. PMID:26260674

Low temperature transport anomaly in Cr substituted (La0.67Sr0.33)MnO3 manganites

NASA Astrophysics Data System (ADS)

Tank, Tejas M.; Shelke, Vilas; Das, Sarmistha; Rana, D. S.; Thaker, C. M.; Samatham, S. S.; Ganesan, V.; Sanyal, S. P.

2017-06-01

The structural, electrical, and magnetic properties of La0.67Sr0.33Mn1-xCrxO3 (0 ≤ x ≤ 0.10) manganites have been studied by substitution of antiferromagnetic trivalent Cr ion at Mn-site. Systematic efforts have been carried out to understand the electrical resistivity behavior in the ferromagnetic metallic and paramagnetic semi-conducting phases of Cr substituted La0.67Sr0.33Mn1-xCrxO3 manganites. Polycrystalline samples show a resistivity minimum at a temperature (Tmin) of <40 K in the ferromagnetic metallic phase. Tmin shifts to higher temperatures on application of magnetic fields. The appearance of this resistivity minimum was analyzed by fittings the data according to the model that considers e-e scattering caused by enhanced Coulombic interactions. The electrical resistivity data has been best fitted in the metallic and semiconducting regime using various models. Present results suggest that intrinsic magnetic inhomogeneity like Cr3+ ions in these strongly electron-correlated manganite systems is originating due to the existence of the ferromagnetic interactions.

Electrical resistivity of ultrafine-grained copper with nanoscale growth twins

NASA Astrophysics Data System (ADS)

Chen, X. H.; Lu, L.; Lu, K.

2007-10-01

We have investigated electrical resistivities of high-purity ultrafine-grained Cu containing different concentrations of nanoscale growth twins, but having identical grain size. The samples were synthesized by pulsed electrodeposition, wherein the density of twins was varied systematically by adjusting the processing parameters. The electrical resistivity of the Cu specimen with a twin spacing of 15nm at room temperature (RT) is 1.75μΩcm (the conductivity is about 97% IACS), which is comparable to that of coarse-grained (CG) pure Cu specimen. A reduction in twin density for the same grain size (with twin lamellar spacings of 35 and 90nm, respectively) results in an increment in electrical resistivity from 1.75to2.12μΩcm. However, the temperature coefficient of resistivity at RT for these Cu specimens is insensitive to the twin spacing and shows a consistent value of ˜3.78×10-3/K, which is slightly smaller than that of CG Cu (3.98×10-3/K). The increased electrical resistivities of the Cu samples were ascribed dominantly to the intrinsic grain boundary (GB) scattering, while the GB defects and GB energy would decrease with increasing twin density. Transmission electron microscope observations revealed the GB configuration difference from the Cu samples with various twin densities. Plastic deformation would induce an apparent increase in the resistivity. The higher of the twin density, the higher increment of RT resistivity was detected in the Cu specimens subjected to 40% rolling strain. Both the deviated twin boundaries and strained GBs may give rise to an increase in the resistivity.

Dielectric Breakdown Characteristics of Oil-pressboard Insulation System against AC/DC Superposed Voltage

NASA Astrophysics Data System (ADS)

Ebisawa, Yoshihito; Yamada, Shin; Mori, Shigekazu; Ikeda, Masami

This paper describes breakdown characteristics of an oil-pressboard insulation system to a superposition voltage of AC and DC voltages. Although AC electric field is decided by the ratio of the relative permittivity of a pressboard and insulating oil, DC electric field is decided by ratio α of volume resistivities. From the measurement in this study, 13—78 and 1.8—5.7 are obtained as the volume resistivity ratios α at temperature of 30°C and 80°C, respectively. The breakdown voltages against AC, DC, and those superposition voltages are surveyed to insulation models. In normal temperature, the breakdown voltage to the superposition voltage of AC and DC is determined by AC electric field applied to the oil duct. Since the α becomes as low as 2-3 at temperature of 80°C, AC and DC voltages almost equally contribute to the electric field of the oil duct as a result. That is, it became clear that superposed DC voltage boosts the electric field across oil ducts at operating high temperature.

Superconducting thermoelectric generator

DOEpatents

Metzger, J.D.; El-Genk, M.S.

1994-01-01

Thermoelectricity is produced by applying a temperature differential to dissimilar electrically conducting or semiconducting materials, thereby producing a voltage that is proportional to the temperature difference. Thermoelectric generators use this effect to directly convert heat into electricity; however, presently-known generators have low efficiencies due to the production of high currents which in turn cause large resistive heating losses. Some thermoelectric generators operate at efficiencies between 4% and 7% in the 800{degrees} to 1200{degrees}C range. According to its major aspects and bradly stated, the present invention is an apparatus and method for producing electricity from heat. In particular, the invention is a thermoelectric generator that juxtaposes a superconducting material and a semiconducting material - so that the superconducting and the semiconducting materials touch - to convert heat energy into electrical energy without resistive losses in the temperature range below the critical temperature of the superconducting material. Preferably, an array of superconducting material is encased in one of several possible configurations within a second material having a high thermal conductivity, preferably a semiconductor, to form a thermoelectric generator.

Electrical and galvanomagnetic properties of biocarbon preforms of white pine wood

NASA Astrophysics Data System (ADS)

Popov, V. V.; Orlova, T. S.; Ramirez-Rico, J.

2009-11-01

The electrical and galvanomagnetic properties of high-porosity biocarbon preforms prepared from white pine wood by pyrolysis at carbonization temperatures T carb = 1000 and 2400°C have been studied. Measurements have been made of the behavior with temperature of the electrical resistivity, as well as of magnetoresistance and the Hall coefficient in the 1.8-300-K temperature interval and magnetic fields of up to 28 kOe. It has been shown that samples of both types (with T carb = 1000 and 2400°C) are characterized by high carrier (hole) concentrations of 6.3 × 1020 and 3.6 × 1020 cm-3, respectively. While these figures approach the metallic concentration, the electrical resistivity of the biocarbon materials studied, unlike that of normal metals, grows with decreasing temperature. Increasing T carb brings about a decrease in electrical resistivity by a factor 1.5-2 within the 1.8-300-K temperature range. The magnetoresistance also follows a qualitatively different pattern at low (1.8-4.2 K) temperatures: it is negative for T carb = 2400°C and positive for T carb = 1000°C. An analysis of experimental data has revealed that the specific features in the conductivity and magnetoresistance of these samples are described by quantum corrections associated inherently with structural characteristics of the biocarbon samples studied, more specifically with the difference between the fractions of the quasi-amorphous and nanocrystalline phases, as well as with the fine structure of the latter phase forming at the two different T carb.

Pressure-induced positive electrical resistivity coefficient in Ni-Nb-Zr-H glassy alloy

NASA Astrophysics Data System (ADS)

Fukuhara, M.; Gangli, C.; Matsubayashi, K.; Uwatoko, Y.

2012-06-01

Measurements under hydrostatic pressure of the electrical resistivity of (Ni0.36Nb0.24Zr0.40)100-xHx (x = 9.8, 11.5, and 14) glassy alloys have been made in the range of 0-8 GPa and 0.5-300 K. The resistivity of the (Ni0.36Nb0.24Zr0.40)86H14 alloy changed its sign from negative to positive under application of 2-8 GPa in the temperature range of 300-22 K, coming from electron-phonon interaction in the cluster structure under pressure, accompanied by deformation of the clusters. In temperature region below 22 K, the resistivity showed negative thermal coefficient resistance by Debye-Waller factor contribution, and superconductivity was observed at 1.5 K.

High temperature resistant cermet and ceramic compositions. [for thermal resistant insulators and refractory coatings

NASA Technical Reports Server (NTRS)

Phillips, W. M. (Inventor)

1978-01-01

High temperature oxidation resistance, high hardness and high abrasion and wear resistance are properties of cermet compositions particularly to provide high temperature resistant refractory coatings on metal substrates, for use as electrical insulation seals for thermionic converters. The compositions comprise a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride are also described.

Correlation between surface morphology and electrical properties of VO2 films grown by direct thermal oxidation method

NASA Astrophysics Data System (ADS)

Yoon, Joonseok; Park, Changwoo; Park, Sungkyun; Mun, Bongjin Simon; Ju, Honglyoul

2015-10-01

We investigate surface morphology and electrical properties of VO2 films fabricated by direct thermal oxidation method. The VO2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 104, and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO2 films reveals that the transport properties of VO2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

Coatings for graphite fibers

NASA Technical Reports Server (NTRS)

Galasso, F. S.; Scola, D. A.; Veltri, R. D.

1980-01-01

Graphite fibers released from composites during burning or an explosion caused shorting of electrical and electronic equipment. Silicon carbide, silica, silicon nitride and boron nitride were coated on graphite fibers to increase their electrical resistances. Resistances as high as three orders of magnitude higher than uncoated fiber were attained without any significant degradation of the substrate fiber. An organo-silicone approach to produce coated fibers with high electrical resistance was also used. Celion 6000 graphite fibers were coated with an organo-silicone compound, followed by hydrolysis and pyrolysis of the coating to a silica-like material. The shear and flexural strengths of composites made from high electrically resistant fibers were considerably lower than the shear and flexural strengths of composites made from the lower electrically resistant fibers. The lower shear strengths of the composites indicated that the coatings on these fibers were weaker than the coating on the fibers which were pyrolyzed at higher temperature.

Note: extraction of temperature-dependent interfacial resistance of thermoelectric modules.

PubMed

Chen, Min

2011-11-01

This article discusses an approach for extracting the temperature dependency of the electrical interfacial resistance associated with thermoelectric devices. The method combines a traditional module-level test rig and a nonlinear numerical model of thermoelectricity to minimize measurement errors on the interfacial resistance. The extracted results represent useful data to investigating the characteristics of thermoelectric module resistance and comparing performance of various modules. © 2011 American Institute of Physics

Characterization of Titanium films for low temperature detectors

NASA Astrophysics Data System (ADS)

Monticone, E.; Rajteri, M.; Rastello, M. L.; Lacquaniti, V.; Gandini, C.; Pasca, E.; Ventura, G.

2002-02-01

In this work we study Ti films, with thickness between 10 nm and 1000 nm, deposited by e-gun on silicon nitride. Critical temperatures and electrical resistivities of these films have been measured and related each other. The behavior of critical temperatures versus the residual resistivities is discussed in the frame of the Testardi and Mattheiss theory .

“Thermal Stabilization Effect” of Al2O3 nano-dopants improves the high-temperature dielectric performance of polyimide

PubMed Central

Yang, Yang; He, Jinliang; Wu, Guangning; Hu, Jun

2015-01-01

Insulation performance of the dielectrics under extreme conditions always attracts widespread attention in electrical and electronic field. How to improve the high-temperature dielectric properties of insulation materials is one of the key issues in insulation system design of electrical devices. This paper studies the temperature-dependent corona resistance of polyimide (PI)/Al2O3 nanocomposite films under high-frequency square-wave pulse conditions. Extended corona resistant lifetime under high-temperature conditions is experimentally observed in the 2 wt% nanocomposite samples. The “thermal stabilization effect” is proposed to explain this phenomenon which attributes to a new kind of trap band caused by nanoparticles. This effect brings about superior space charge characteristics and corona resistance under high temperature with certain nano-doping concentration. The proposed theory is experimentally demonstrated by space charge analysis and thermally stimulated current (TSC) tests. This discovered effect is of profound significance on improving high-temperature dielectric properties of nanocomposites towards various applications. PMID:26597981

PID temperature controller in pig nursery: spatial characterization of thermal environment

NASA Astrophysics Data System (ADS)

de Souza Granja Barros, Juliana; Rossi, Luiz Antonio; Menezes de Souza, Zigomar

2018-05-01

The use of enhanced technologies of temperature control can improve the thermal conditions in environments of livestock facilities. The objective of this study was to evaluate the spatial distribution of the thermal environment variables in a pig nursery with a heating system with two temperature control technologies based on the geostatistical analysis. The following systems were evaluated: overhead electrical resistance with Proportional, Integral, and Derivative (PID) controller and overhead electrical resistance with a thermostat. We evaluated the climatic variables: dry bulb temperature (Tbs), air relative humidity (RH), temperature and humidity index (THI), and enthalpy in the winter, at 7:00, 12:00, and 18:00 h. The spatial distribution of these variables was mapped by kriging. The results showed that the resistance heating system with PID controllers improved the thermal comfort conditions in the pig nursery in the coldest hours, maintaining the spatial distribution of the air temperature more homogeneous in the pen. During the hottest weather, neither system provided comfort.

PID temperature controller in pig nursery: spatial characterization of thermal environment

NASA Astrophysics Data System (ADS)

de Souza Granja Barros, Juliana; Rossi, Luiz Antonio; Menezes de Souza, Zigomar

2017-11-01

The use of enhanced technologies of temperature control can improve the thermal conditions in environments of livestock facilities. The objective of this study was to evaluate the spatial distribution of the thermal environment variables in a pig nursery with a heating system with two temperature control technologies based on the geostatistical analysis. The following systems were evaluated: overhead electrical resistance with Proportional, Integral, and Derivative (PID) controller and overhead electrical resistance with a thermostat. We evaluated the climatic variables: dry bulb temperature (Tbs), air relative humidity (RH), temperature and humidity index (THI), and enthalpy in the winter, at 7:00, 12:00, and 18:00 h. The spatial distribution of these variables was mapped by kriging. The results showed that the resistance heating system with PID controllers improved the thermal comfort conditions in the pig nursery in the coldest hours, maintaining the spatial distribution of the air temperature more homogeneous in the pen. During the hottest weather, neither system provided comfort.

Transport and magnetic properties of HITPERM alloys

NASA Astrophysics Data System (ADS)

Pekala, K.; Latuch, J.; Pekala, M.; Skorvanek, I.; Jaskiewicz, P.

2003-02-01

Nanocrystalline HITPERM alloys Fe44.6Co43.3X7.4B3.7Cu1 (X = Nb, Zr, Hf) prepared by crystallization of amorphous precursors are studied by magnetization and electrical resistivity measurements for the first time. Structural and magnetic components of the electrical resistivity are separated. The electrical resistivity of the nanocrystalline α' (FeCo) phase calculated using the Maxwell Garnett relation proves strong electron scattering on the grain boundaries. The temperature variation of the crystalline fraction during the first crystallization stage is calculated for the Hf based alloy.

Fire Alarm Wallpaper Based on Fire-Resistant Hydroxyapatite Nanowire Inorganic Paper and Graphene Oxide Thermosensitive Sensor.

PubMed

Chen, Fei-Fei; Zhu, Ying-Jie; Chen, Feng; Dong, Li-Ying; Yang, Ri-Long; Xiong, Zhi-Chao

2018-04-24

Wallpaper with multiple functions, such as fire resistance and an automatic alarm in fire disasters, will be attractive for the interior decoration of houses. Herein, we report a smart fire alarm wallpaper prepared using fire-resistant inorganic paper based on ultralong hydroxyapatite nanowires (HNs) and graphene oxide (GO) thermosensitive sensors. At room temperature, the GO thermosensitive sensor is in a state of electrical insulation; however, it becomes electrically conductive at high temperatures. In a fire disaster, high temperature will rapidly remove the oxygen-containing groups of GO, leading to the transformation process of GO from an electrically insulated state into an electrically conductive one. In this way, the alarm lamp and alarm buzzer connected with the GO thermosensitive sensor will send out the alerts to people immediately for taking emergency actions. After the surface modification with polydopamine of GO (PGO), the sensitivity and flame retardancy of the GO thermosensitive sensor are further improved, resulting in a low responsive temperature (126.9 °C), fast response (2 s), and sustained working time in the flame (at least 5 min). Compared with combustible commercial wallpaper, the smart fire alarm wallpaper based on HNs and GO (or PGO) is superior owing to excellent nonflammability and high-temperature resistance of HNs, which can protect the GO (or PGO) thermosensitive sensor from the flames. The smart fire alarm wallpaper can be processed into various shapes, dyed with different colors, and printed with the commercial printer and thus has promising applications in high-safety interior decoration of houses.

Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si

NASA Astrophysics Data System (ADS)

Ali, Ahmad Hadi; Hassan, Zainuriah; Shuhaimi, Ahmad

2018-06-01

This paper reports on the enhancement of optical transmittance and electrical resistivity of indium tin oxide (ITO) transparent conductive oxides (TCO) deposited by radio frequency (RF) sputtering on Si substrate. Post-annealing was conducted on the samples at temperature ranges of 500-700 °C. From X-ray diffraction analysis (XRD), ITO (2 2 2) peak was observed after post-annealing indicating crystallization phase of the films. From UV-vis measurements, the ITO thin film shows highest transmittance of more than 90% at post-annealing temperature of 700 °C as compared to the as-deposited thin films. From atomic force microscope (AFM), the surface roughness becomes smoother after post-annealing as compared to the as-deposited. The lowest electrical resistivity for ITO sample is 6.68 × 10-4 Ω cm after post-annealed at 700 °C that are contributed by high carrier concentration and mobility. The improved structural and surface morphological characteristics helps in increasing the optical transmittance and reducing the electrical resistivity of the ITO thin films.

High-throughput screening for combinatorial thin-film library of thermoelectric materials.

PubMed

Watanabe, Masaki; Kita, Takuji; Fukumura, Tomoteru; Ohtomo, Akira; Ueno, Kazunori; Kawasaki, Masashi

2008-01-01

A high-throughput method has been developed to evaluate the Seebeck coefficient and electrical resistivity of combinatorial thin-film libraries of thermoelectric materials from room temperature to 673 K. Thin-film samples several millimeters in size were deposited on an integrated Al2O3 substrate with embedded lead wires and local heaters for measurement of the thermopower under a controlled temperature gradient. An infrared camera was used for real-time observation of the temperature difference Delta T between two electrical contacts on the sample to obtain the Seebeck coefficient. The Seebeck coefficient and electrical resistivity of constantan thin films were shown to be almost identical to standard data for bulk constantan. High-throughput screening was demonstrated for a thermoelectric Mg-Si-Ge combinatorial library.

Pressure dependence of the electrical properties of GaBi solidified in low gravity

NASA Technical Reports Server (NTRS)

Wu, M. K.; Ashburn, J. R.; Torng, C. J.; Curreri, P. A.; Chu, C. W.

1987-01-01

Immiscible GaBi alloys were solidified during free fall in the NASA Marshall Space Flight Center drop tower, which provides about 4.5 seconds of low gravity. The electrical resistivity and magnetic susceptibility were measured as a function of pressure (up to 18 kbar) and temperature (300 K to 4.2 K) of drop tower (DT) and ground control (GC) samples prepared under identical conditions, except for gravity. At ambient pressure the electrical resistance of the DT sample exhibits a broad maximum at 100 K, while that of GC sample decreases rapidly as temperature decreases. Both DT and GC samples become superconducting at 7.7 K. However, a minor second superconducting phase with a transition temperature at 8.3 K is observed only in the DT samples.

Water-level sensor and temperature-profile detector

DOEpatents

Not Available

1981-01-29

A temperature profile detector is described which comprises a surrounding length of metal tubing and an interior electrical conductor both constructed of high temperature high electrical resistance materials. A plurality of gas-filled expandable bellows made of electrically conductive material are positioned at spaced locations along a length of the conductors. The bellows are sealed and contain a predetermined volume of a gas designed to effect movement of the bellows from an open circuit condition to a closed circuit condition in response to monitored temperature changes sensed by each bellows.

Theoretical investigation on the magnetic and electric properties in TbSb compound through an anisotropic microscopic model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ranke, P. J. von, E-mail: von.ranke@uol.com.br; Ribeiro, P. O.; Alho, B. P.

2016-05-14

We report the strong correlations between the magnetoresistivity and the magnetic entropy change in the cubic antiferromagnetic TbSb compound. The theoretical investigation was performed through a microscopic model which takes into account the crystalline electrical field anisotropy, exchange coupling interactions between the up and down magnetic sublattices, and the Zeeman interaction. The easy magnetization directions changes from 〈001〉 to 〈110〉 and then to 〈111〉 observed experimentally was successfully theoretically described. Also, the calculation of the temperature dependence of electric resistivity showed good agreement with the experimental data. Theoretical predictions were calculated for the temperature dependence of the magnetic entropy andmore » resistivity changes upon magnetic field variation. Besides, the difference in the spin up and down sublattices resistivity was investigated.« less

The constant current loop: A new paradigm for resistance signal conditioning

NASA Astrophysics Data System (ADS)

Anderson, Karl F.

1994-02-01

A practical single constant current loop circuit for the signal conditioning of variable-resistance transducers has been synthesized, analyzed, and demonstrated. The strain gage and the resistance temperature detector are examples of variable-resistance sensors. Lead wires connect variable-resistance sensors to remotely located signal-conditioning hardware. The presence of lead wires in the conventional Wheatstone bridge signal-conditioning circuit introduces undesired effects that reduce the quality of the data from the remote sensors. A practical approach is presented for suppressing essentially all lead wire resistance effects while indicating only the change in resistance value. Theoretical predictions supported by laboratory testing confirm the following features of the approach: (1) dc response; (2) the electrical output is unaffected by extremely large variation in the resistance of any or all lead wires; (3) the electrical output remains zero for no change in gage resistance; (4) the electrical output is inherently linear with respect to gage resistance change; (5) the sensitivity is double that of a Wheatstone bridge circuit; and (6) the same excitation wires can serve multiple independent gages. An adaptation of current loop circuit is presented that simultaneously provides an output signal voltage directly proportional to transducer resistance change and provides temperature information that is unaffected by transducer and lead wire resistance variations. These innovations are the subject of NASA patent applications.

The constant current loop: A new paradigm for resistance signal conditioning

NASA Astrophysics Data System (ADS)

Anderson, Karl F.

1992-10-01

A practical single constant current loop circuit for the signal conditioning of variable resistance transducers has been synthesized, analyzed, and demonstrated. The strain gage and the resistance temperature device are examples of variable resistance sensors. Lead wires connect variable resistance sensors to remotely located signal conditioning hardware. The presence of lead wires in the conventional Wheatstone bridge signal conditioning circuit introduces undesired effects that reduce the quality of the data from the remote sensors. A practical approach is presented for suppressing essentially all lead wire resistance effects while indicating only the change in resistance value. Theoretical predictions supported by laboratory testing confirm the following features of the approach: (1) dc response; (2) the electrical output is unaffected by extremely large variations in the resistance of any or all lead wires; (3) the electrical output remains zero for no change in gage resistance; (4) the electrical output is inherently linear with respect to gage resistance change; (5) the sensitivity is double that of a Wheatstone bridge circuit; and (6) the same excitation wires can serve multiple independent gages. An adaptation of current loop circuit is presented that simultaneously provides an output signal voltage directly proportional to transducer resistance change and provides temperature information that is unaffected by transducer and lead wire resistance variations. These innovations are the subject of NASA patent applications.

The constant current loop: A new paradigm for resistance signal conditioning

NASA Astrophysics Data System (ADS)

Anderson, Karl F.

A practical, single, constant-current loop circuit for the signal conditioning of variable-resistance transducers was synthesized, analyzed, and demonstrated. The strain gage and the resistance temperature device are examples of variable-resistance sensors. Lead wires connect variable-resistance sensors to remotely located signal-conditioning hardware. The presence of lead wires in the conventional Wheatstone bridge signal-conditioning circuit introduces undesired effects that reduce the quality of the data from the remote sensors. A practical approach is presented for suppressing essentially all lead wire resistance effects while indicating only the change in resistance value. Theoretical predictions supported by laboratory testing confirm the following features of the approach: (1) the dc response; (2) the electrical output is unaffected by extremely large variations in the resistance of any or all lead wires; (3) the electrical output remains zero for no change in gage resistance; (4) the electrical output is inherently linear with respect to gage resistance change; (5) the sensitivity is double that of a Wheatstone bridge circuit; and (6) the same excitation and sense wires can serve multiple independent gages. An adaptation of the current loop circuit is presented that simultaneously provides an output signal voltage directly proportional to transducer resistance change and provides temperature information that is unaffected by transducer and lead wire resistance variations. These innovations are the subject of NASA patent applications.

The constant current loop: A new paradigm for resistance signal conditioning

NASA Technical Reports Server (NTRS)

Anderson, Karl F.

1994-01-01

A practical single constant current loop circuit for the signal conditioning of variable-resistance transducers has been synthesized, analyzed, and demonstrated. The strain gage and the resistance temperature detector are examples of variable-resistance sensors. Lead wires connect variable-resistance sensors to remotely located signal-conditioning hardware. The presence of lead wires in the conventional Wheatstone bridge signal-conditioning circuit introduces undesired effects that reduce the quality of the data from the remote sensors. A practical approach is presented for suppressing essentially all lead wire resistance effects while indicating only the change in resistance value. Theoretical predictions supported by laboratory testing confirm the following features of the approach: (1) dc response; (2) the electrical output is unaffected by extremely large variation in the resistance of any or all lead wires; (3) the electrical output remains zero for no change in gage resistance; (4) the electrical output is inherently linear with respect to gage resistance change; (5) the sensitivity is double that of a Wheatstone bridge circuit; and (6) the same excitation wires can serve multiple independent gages. An adaptation of current loop circuit is presented that simultaneously provides an output signal voltage directly proportional to transducer resistance change and provides temperature information that is unaffected by transducer and lead wire resistance variations. These innovations are the subject of NASA patent applications.

The constant current loop: A new paradigm for resistance signal conditioning

NASA Technical Reports Server (NTRS)

Anderson, Karl F.

1993-01-01

A practical, single, constant-current loop circuit for the signal conditioning of variable-resistance transducers was synthesized, analyzed, and demonstrated. The strain gage and the resistance temperature device are examples of variable-resistance sensors. Lead wires connect variable-resistance sensors to remotely located signal-conditioning hardware. The presence of lead wires in the conventional Wheatstone bridge signal-conditioning circuit introduces undesired effects that reduce the quality of the data from the remote sensors. A practical approach is presented for suppressing essentially all lead wire resistance effects while indicating only the change in resistance value. Theoretical predictions supported by laboratory testing confirm the following features of the approach: (1) the dc response; (2) the electrical output is unaffected by extremely large variations in the resistance of any or all lead wires; (3) the electrical output remains zero for no change in gage resistance; (4) the electrical output is inherently linear with respect to gage resistance change; (5) the sensitivity is double that of a Wheatstone bridge circuit; and (6) the same excitation and sense wires can serve multiple independent gages. An adaptation of the current loop circuit is presented that simultaneously provides an output signal voltage directly proportional to transducer resistance change and provides temperature information that is unaffected by transducer and lead wire resistance variations. These innovations are the subject of NASA patent applications.

Thermophysical Properties of Five Industrial Steels in the Solid and Liquid Phase

NASA Astrophysics Data System (ADS)

Wilthan, B.; Schützenhöfer, W.; Pottlacher, G.

2017-07-01

The need for characterization of thermophysical properties of steel was addressed in the FFG-Bridge Project 810999 in cooperation with our partner from industry, Böhler Edelstahl GmbH & Co KG. To optimize numerical simulations of production processes such as plastic deformation or remelting, additional and more accurate thermophysical property data were necessary for the group of steels under investigation. With the fast ohmic pulse heating circuit system and a commercial high-temperature Differential Scanning Calorimeter at Graz University of Technology, we were able to measure the temperature-dependent specific electrical resistivity and specific enthalpy for a set of five high alloyed steels: E105, M314, M315, P800, and V320 from room temperature up into the liquid phase. The mechanical properties of those steels make sample preparation an additional challenge. The described experimental approach typically uses electrically conducting wire-shaped specimen with a melting point high enough for the implemented pyrometric temperature measurement. The samples investigated here are too brittle to be drawn as wires and could only be cut into rectangular specimen by Electrical Discharge Machining. Even for those samples all electrical signals and the temperature signal can be recorded with proper alignment of the pyrometer. For each material under investigation, a set of data including chemical composition, solidus and liquidus temperature, enthalpy, electrical resistivity, and thermal diffusivity as a function of temperature will be reported.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alves, L. M. S., E-mail: leandro-fisico@hotmail.com; Lima, B. S. de; Santos, C. A. M. dos

K{sub 0.05}MoO{sub 2} has been studied by x-ray and neutron diffractometry, electrical resistivity, magnetization, heat capacity, and thermal expansion measurements. The compound displays two phase transitions, a first-order phase transition near room temperature and a second-order transition near 54 K. Below the transition at 54 K, a weak magnetic anomaly is observed and the electrical resistivity is well described by a power-law temperature dependence with exponent near 0.5. The phase transitions in the K-doped MoO{sub 2} compound have been discussed for the first time using neutron diffraction, high resolution thermal expansion, and heat capacity measurements as a function of temperature.

Pressure and magnetic field effects on the valence transition of EuRh2Si2

NASA Astrophysics Data System (ADS)

Mitsuda, Akihiro; Kishaba, Eigo; Fujimoto, Takumi; Oyama, Kohei; Wada, Hirofumi; Mizumaki, Masaichiro; Kawamura, Naomi; Ishimatsu, Naoki

2018-05-01

We have measured the X-ray absorption spectra (XAS), electrical resistivity and magnetic susceptibility of EuRh2Si2, which undergoes a valence transition under high pressures. A sharp decrease in the Eu valence determined from the XAS was observed at around 70 K in the temperature dependence at P = 1.2-1.9 GPa. In the temperature dependence of electrical resistivity and magnetic susceptibility, we observed jumps associated with the temperature-induced valence transition under high pressures. The magnetoresistance detected a field-induced valence transition. The results are discussed from the thermodynamic point of view.

Rugged Preheaters For Vacuum Plasma Spraying

NASA Technical Reports Server (NTRS)

Woodford, William H.; Mckechnie, Timothy N.; Sander, Lewis D.; Power, Christopher A.; Sander, Heather L.; Nguyen, Dalton D.

1994-01-01

Electric preheater units built to ensure large workpieces to be coated with metals by vacuum plasma spraying heated uniformly to requisite high temperatures by time plasma torch arrives. Units similar to electrical-resistance ribbon heaters in toasters and in some small portable electric "space" heaters. Nichrome resistance-heating ribbons wrapped around ceramic insulating spools on rings and on plates. Round workpiece placed in middle of ring preheater. Plate preheaters stacked as needed near workpiece.

Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.

PubMed

Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M

2016-12-01

Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

Effect of charge ordering and phase separation on the electrical and magnetoresistive properties of polycrystalline La0.4Eu0.1Ca0.5MnO3

NASA Astrophysics Data System (ADS)

Krichene, A.; Boujelben, W.; Mukherjee, S.; Shah, N. A.; Solanki, P. S.

2018-03-01

We have investigated the effect of charge ordering and phase separation on the electrical and magnetotransport properties of La0.4Eu0.1Ca0.5MnO3 polycrystalline sample. Temperature dependence of resistivity shows a metal-insulator transition at transition temperature Tρ. A hysteretic behavior is observed for zero field resistivity curves with Tρ = 128 K on cooling process and Tρ = 136 K on warming process. Zero field resistivity curves follow Zener polynomial law in the metallic phase with unusual n exponent value ∼9. Presence of resistivity minimum at low temperatures has been ascribed to the coulombic electron-electron scattering process. Resistivity modification due to the magnetic field cycling testifies the presence of the training effect. Magnetization and resistivity appear to be highly correlated. Magnetoresistive study reveals colossal values of negative magnetoresistance reaching about 75% at 132 K under only 2T applied field. Colossal values of magnetoresistance suggest the possibility of using this sample for magnetic field sensing and spintronic applications.

Characterizing Uncertainty In Electrical Resistivity Tomography Images Due To Subzero Temperature Variability

NASA Astrophysics Data System (ADS)

Herring, T.; Cey, E. E.; Pidlisecky, A.

2017-12-01

Time-lapse electrical resistivity tomography (ERT) is used to image changes in subsurface electrical conductivity (EC), e.g. due to a saline contaminant plume. Temperature variation also produces an EC response, which interferes with the signal of interest. Temperature compensation requires the temperature distribution and the relationship between EC and temperature, but this relationship at subzero temperatures is not well defined. The goal of this study is to examine how uncertainty in the subzero EC/temperature relationship manifests in temperature corrected ERT images, especially with respect to relevant plume parameters (location, contaminant mass, etc.). First, a lab experiment was performed to determine the EC of fine-grained glass beads over a range of temperatures (-20° to 20° C) and saturations. The measured EC/temperature relationship was then used to add temperature effects to a hypothetical EC model of a conductive plume. Forward simulations yielded synthetic field data to which temperature corrections were applied. Varying the temperature/EC relationship used in the temperature correction and comparing the temperature corrected ERT results to the synthetic model enabled a quantitative analysis of the error of plume parameters associated with temperature variability. Modeling possible scenarios in this way helps to establish the feasibility of different time-lapse ERT applications by quantifying the uncertainty associated with parameter(s) of interest.

New experimental methodology, setup and LabView program for accurate absolute thermoelectric power and electrical resistivity measurements between 25 and 1600 K: application to pure copper, platinum, tungsten, and nickel at very high temperatures.

PubMed

Abadlia, L; Gasser, F; Khalouk, K; Mayoufi, M; Gasser, J G

2014-09-01

In this paper we describe an experimental setup designed to measure simultaneously and very accurately the resistivity and the absolute thermoelectric power, also called absolute thermopower or absolute Seebeck coefficient, of solid and liquid conductors/semiconductors over a wide range of temperatures (room temperature to 1600 K in present work). A careful analysis of the existing experimental data allowed us to extend the absolute thermoelectric power scale of platinum to the range 0-1800 K with two new polynomial expressions. The experimental device is controlled by a LabView program. A detailed description of the accurate dynamic measurement methodology is given in this paper. We measure the absolute thermoelectric power and the electrical resistivity and deduce with a good accuracy the thermal conductivity using the relations between the three electronic transport coefficients, going beyond the classical Wiedemann-Franz law. We use this experimental setup and methodology to give new very accurate results for pure copper, platinum, and nickel especially at very high temperatures. But resistivity and absolute thermopower measurement can be more than an objective in itself. Resistivity characterizes the bulk of a material while absolute thermoelectric power characterizes the material at the point where the electrical contact is established with a couple of metallic elements (forming a thermocouple). In a forthcoming paper we will show that the measurement of resistivity and absolute thermoelectric power characterizes advantageously the (change of) phase, probably as well as DSC (if not better), since the change of phases can be easily followed during several hours/days at constant temperature.

New experimental methodology, setup and LabView program for accurate absolute thermoelectric power and electrical resistivity measurements between 25 and 1600 K: Application to pure copper, platinum, tungsten, and nickel at very high temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abadlia, L.; Mayoufi, M.; Gasser, F.

2014-09-15

In this paper we describe an experimental setup designed to measure simultaneously and very accurately the resistivity and the absolute thermoelectric power, also called absolute thermopower or absolute Seebeck coefficient, of solid and liquid conductors/semiconductors over a wide range of temperatures (room temperature to 1600 K in present work). A careful analysis of the existing experimental data allowed us to extend the absolute thermoelectric power scale of platinum to the range 0-1800 K with two new polynomial expressions. The experimental device is controlled by a LabView program. A detailed description of the accurate dynamic measurement methodology is given in thismore » paper. We measure the absolute thermoelectric power and the electrical resistivity and deduce with a good accuracy the thermal conductivity using the relations between the three electronic transport coefficients, going beyond the classical Wiedemann-Franz law. We use this experimental setup and methodology to give new very accurate results for pure copper, platinum, and nickel especially at very high temperatures. But resistivity and absolute thermopower measurement can be more than an objective in itself. Resistivity characterizes the bulk of a material while absolute thermoelectric power characterizes the material at the point where the electrical contact is established with a couple of metallic elements (forming a thermocouple). In a forthcoming paper we will show that the measurement of resistivity and absolute thermoelectric power characterizes advantageously the (change of) phase, probably as well as DSC (if not better), since the change of phases can be easily followed during several hours/days at constant temperature.« less

An electrical circuit model for additive-modified SnO2 ceramics

NASA Astrophysics Data System (ADS)

Karami Horastani, Zahra; Alaei, Reza; Karami, Amirhossein

2018-05-01

In this paper an electrical circuit model for additive-modified metal oxide ceramics based on their physical structures and electrical resistivities is presented. The model predicts resistance of the sample at different additive concentrations and different temperatures. To evaluate the model two types of composite ceramics, SWCNT/SnO2 with SWCNT concentrations of 0.3, 0.6, 1.2, 2.4 and 3.8%wt, and Ag/SnO2 with Ag concentrations of 0.3, 0.5, 0.8 and 1.5%wt, were prepared and their electrical resistances versus temperature were experimentally measured. It is shown that the experimental data are in good agreement with the results obtained from the model. The proposed model can be used in the design process of ceramic-based gas sensors, and it also clarifies the role of additive in gas sensing process of additive-modified metal oxide gas sensors. Furthermore the model can be used in the system level modeling of designs in which these sensors are also present.

Evolution of Mechanical and Electrical Properties During Annealing of the Copper Wire Drawn

NASA Astrophysics Data System (ADS)

Zidani, M.; Messaoudi, S.; Baudin, T.; Derfouf, C.; Boulagroun, A.; Mathon, M. H.

2011-12-01

In this work, the evolution of mechanical and electrical properties and microstructure of industrial copper wire used for electrical cabling was characterized. This work is not limited to the interpretation of the microstructural characteristics of the wire-drawn state but also after different annealing treatments. For the lowest temperatures (160 °C and 200 °C), significant changes are not observed in the microstructure (grain size) in the weak deformed wire (28.5%). Instead, variations of some properties of the metal were observed (hardness and electrical resistivity). For strong deformation (61.4% and 84.59%), annealing, leads to recrystallization with a softening material. Let us note that the resistivity increases with deformation level and becomes higher after annealing at low temperature (200 °C).

Influence of low-temperature resistivity on fast electron transport in solids: scaling to fast ignition electron beam parameters

NASA Astrophysics Data System (ADS)

McKenna, P.; MacLellan, D. A.; Butler, N. M. H.; Dance, R. J.; Gray, R. J.; Robinson, A. P. L.; Neely, D.; Desjarlais, M. P.

2015-06-01

The role of low-temperature electrical resistivity in defining the transport properties of mega-Ampere currents of fast (MeV) electrons in solids is investigated using 3D hybrid particle-in-cell (PIC) simulations. By considering resistivity profiles intermediate to the ordered (lattice) and disordered forms of two example materials, lithium and silicon, it is shown that both the magnitude of the resistivity and the shape of the resistivity-temperature profile at low temperatures strongly affect the self-generated resistive magnetic fields and the onset of resistive instabilities, and thus the overall fast electron beam transport pattern. The scaling of these effects to the giga-Ampere electron currents required for the fast ignition scheme for inertial fusion is also explored.

Reversible temperature regulation of electrical and thermal conductivity using liquid–solid phase transitions

PubMed Central

Zheng, Ruiting; Gao, Jinwei; Wang, Jianjian; Chen, Gang

2011-01-01

Reversible temperature tuning of electrical and thermal conductivities of materials is of interest for many applications, including seasonal regulation of building temperature, thermal storage and sensors. Here we introduce a general strategy to achieve large contrasts in electrical and thermal conductivities using first-order phase transitions in percolated composite materials. Internal stress generated during a phase transition modulates the electrical and thermal contact resistances, leading to large contrasts in the electrical and thermal conductivities at the phase transition temperature. With graphite/hexadecane suspensions, the electrical conductivity changes 2 orders of magnitude and the thermal conductivity varies up to 3.2 times near 18 °C. The generality of the approach is also demonstrated in other materials such as graphite/water and carbon nanotube/hexadecane suspensions. PMID:21505445

Reversible temperature regulation of electrical and thermal conductivity using liquid-solid phase transitions.

PubMed

Zheng, Ruiting; Gao, Jinwei; Wang, Jianjian; Chen, Gang

2011-01-01

Reversible temperature tuning of electrical and thermal conductivities of materials is of interest for many applications, including seasonal regulation of building temperature, thermal storage and sensors. Here we introduce a general strategy to achieve large contrasts in electrical and thermal conductivities using first-order phase transitions in percolated composite materials. Internal stress generated during a phase transition modulates the electrical and thermal contact resistances, leading to large contrasts in the electrical and thermal conductivities at the phase transition temperature. With graphite/hexadecane suspensions, the electrical conductivity changes 2 orders of magnitude and the thermal conductivity varies up to 3.2 times near 18 °C. The generality of the approach is also demonstrated in other materials such as graphite/water and carbon nanotube/hexadecane suspensions.

Research for Brazing Materials of High-Temperature Thermoelectric Modules with CoSb3 Thermoelectric Materials

NASA Astrophysics Data System (ADS)

Lee, Yu Seong; Kim, Suk Jun; Kim, Byeong Geun; Lee, Soonil; Seo, Won-Seon; Kim, Il-Ho; Choi, Soon-Mok

2017-05-01

Metallic glass (MG) can be a candidate for an alternative brazing material of high-temperature thermoelectric modules, since we can expect both a lower brazing temperature and a high operating temperature for the junction from the MG brazers. Another advantage of MG powders is their outstanding oxidation resistance, namely, high-temperature durability in atmosphere. We fabricated three compositions of Al-based MGs—Al-Y-Ni, Al-Y-Ni-Co, and Al-Y-Ni-Co-La—by using the melt spinning process, and their T gs were 273°C, 264°C, and 249°C, respectively. The electrical resistivity of the Al-Y-Ni MG ribbon dropped significantly after annealing at 300°C. The electrical resistivity of crystallized Al-Y-Ni reduced down to 0.03 mΩ cm, which is an order of magnitude lower than that of the amorphous one. After the MG ribbons were pulverized to sub-100 μm, the average particle size was about 400 μm.

Atomistic study of the electronic contact resistivity between the half-Heusler alloys (HfCoSb, HfZrCoSb, HfZrNiSn) and the metal Ag

NASA Astrophysics Data System (ADS)

He, Yuping; Léonard, François; Spataru, Catalin D.

2018-06-01

Half-Heusler (HH) alloys have shown promising thermoelectric properties in the medium- and high-temperature range. To harness these material properties for thermoelectric applications, it is important to realize electrical contacts with low electrical contact resistivity. However, little is known about the detailed structural and electronic properties of such contacts and the expected values of contact resistivity. Here, we employ atomistic ab initio calculations to study electrical contacts in a subclass of HH alloys consisting of the compounds HfCoSb, HfZrCoSb, and HfZrNiSn. By using Ag as a prototypical metal, we show that the termination of the HH material critically determines the presence or absence of strong deformations at the interface. Our study includes contacts to doped materials, and the results indicate that the p -type materials generally form ohmic contacts while the n -type materials have a small Schottky barrier. We calculate the temperature dependence of the contact resistivity in the low- to medium-temperature range and provide quantitative values that set lower limits for these systems.

Liquid level detector

DOEpatents

Tokarz, Richard D.

1982-01-01

A liquid level sensor having a pair of upright conductors spaced by an insulator defining a first high resistance path between the conductors. An electrically conductive path is interposed between the upright conductors at a discrete location at which liquid level is to be measured. It includes a liquid accessible gap of a dimension such that the electrical resistance across the conductor when the gap is filled with the liquid is detectably less than when the gap is emptied. The conductor might also be physically altered by temperature changes to serve also as an indicator of elevated temperature.

Liquid-level detector

DOEpatents

Not Available

1981-01-29

Aliquid level sensor is described which has a pair of upright conductors spaced by an insulator defining a first high resistance path between the conductors. An electrically conductive path is interposed between the upright conductors at a discrete location at which liquid level is to be measured. It includes a liquid accessible gap of a dimension such that the electrical resistance across the conductor when the gap is filled with the liquid is detectably less than when the gap is emptied. The conductor might also be physically altered by temperature changes to serve also as an indicator of elevated temperature.

Measurement of the thermal coefficient of electrical resistivity of a nonmagnetic metal

NASA Astrophysics Data System (ADS)

Lacsný, Boris; Králiková, Petra; Dudáková, Simona; Škorecová, Ivana; Teleki, Aba

2017-05-01

The experiment of a magnet falling through a conductive tube is well-known, and teachers often use it in their classrooms, not only in high schools, but also in undergraduate courses of physics. This article describes the measurement of the thermal coefficient of electrical resistivity of a nonmagnetic metal using this experiment. At room temperature, the experiments designed by the authors are suitable for high schools. For undergraduate courses, we present a set-up with liquid nitrogen to realize the measurement over a wider range of temperatures.

Resistance heater for use in a glass melter

DOEpatents

Routt, K.R.; Porter, M.A.

1984-01-01

A resistance heating element that includes: a resistance heating medium of a mixture of electrically conductive and insulative particles in powdered form mixed together in predetermined proportions to achieve a given resistivity; a hollow outer electrode surrounding the resistance heating medium; and an inner electrode coaxially disposed within said outer electrode. In its preferred embodiments, the electrically conductive powder is selected from the group consisting essentially of graphite, Inconel alloy, molybdenum, nichrome alloy and stainless steel, while the insulator powder is silicon dioxide or alumina. The resistance heating element, being resistant to damage from mechanical shock and corrosion at elevated temperatures, is used in a glass melter.

Thickness and temperature dependent electrical characteristics of crystalline BaxSr1-xTiO3 thin films

NASA Astrophysics Data System (ADS)

Panda, B.; Roy, A.; Dhar, A.; Ray, S. K.

2007-03-01

Polycrystalline Ba1-xSrxTiO3 (BST) thin films with three different compositions have been deposited by radio-frequency magnetron sputtering technique on platinum coated silicon substrates. Samples with buffer and barrier layers for different film thicknesses and processing temperatures have been studied. Crystallite size of BST films has been found to increase with increasing substrate temperature. Thickness dependent dielectric constant has been studied and discussed in the light of an interfacial dead layer and the finite screening length of the electrode. Ferroelectric properties of the films have also been studied for various deposition conditions. The electrical resistivity of the films measured at different temperatures shows a positive temperature coefficient of resistance under a constant bias voltage.

Effect of oxidation on transport properties of zirconium-1% niobium alloy

NASA Astrophysics Data System (ADS)

Peletsky, V. E.; Musayeva, Z. A.

1995-11-01

The thermal conductivity and electrical resistivity of zirconium-1 wt% niobium samples were measured before and after the process of their oxidation in air. A special procedure was used to dissolve the gas and to smooth out its concentration in the alloy. The basic experiments were performed under high vacuum under steady-state temperature conditions. The temperature range was 300 1600 K. for the pure alloy and 300 1100 K for the samples containing oxygen. It was found that the thermal conductivity—oxygen concentration relation reverses its sign from negative at low and middle temperatures to positive at temperatures above 900 K. The relation between the electrical resistivity and the oxygen content does not show this feature. The Lorenz function was found to have an anomalous temperature dependence.

Footwear and flooring: charge generation in combination with a person as influenced by environmental moisture

NASA Astrophysics Data System (ADS)

Swenson, D. E.

2015-10-01

It is well known that a person walking on a floor will liberate electrostatic charge. The amount of charge that can be accumulated on a person by walking is dependent on many factors that are also well understood. Among these factors is the electrical resistance between a person and ground. The electrical resistance of footwear, other clothing, a person's skin resistance and the contact resistance between footwear and the floor impact the total resistance of the system. As important as measuring resistance may be as an evaluation method, it does not take into account triboelectric generation of charge. The recent revisions of ANSI/ESD S20.20[1] from the ESD Association and IEC61340-5-1[2] from IEC TC101 - Electrostatics, both include a dynamic walking test since experience in recent years has shown that resistance alone does not predict how a footwear and flooring system will actually perform. The USA group ASHRAE1, commissioned a study to evaluate electrostatic charge generation inside data centres as influenced by environmental moisture (relative and absolute humidity)[3][4]. The reason for this study is that past data centre operating guidelines have called for a very narrow range of temperature and humidity control, largely because of the anecdotal evidence that moderate to high RH impacts static electricity generation and accumulation. This results in a massive consumption of electricity to maintain a narrow window of temperature and environmental moisture. Broadening or eliminating humidity controls could result in a major saving of electricity and money.

Coaxial Electric Heaters

NASA Technical Reports Server (NTRS)

Strekalov, Dmitry; Matsko, Andrey; Savchenkov, Anatoliy; Maleki, Lute

2008-01-01

Coaxial electric heaters have been conceived for use in highly sensitive instruments in which there are requirements for compact heaters but stray magnetic fields associated with heater electric currents would adversely affect operation. Such instruments include atomic clocks and magnetometers that utilize heated atomic-sample cells, wherein stray magnetic fields at picotesla levels could introduce systematic errors into instrument readings. A coaxial electric heater is essentially an axisymmetric coaxial cable, the outer conductor of which is deliberately made highly electrically resistive so that it can serve as a heating element. As in the cases of other axisymmetric coaxial cables, the equal magnitude electric currents flowing in opposite directions along the inner and outer conductors give rise to zero net magnetic field outside the outer conductor. Hence, a coaxial electric heater can be placed near an atomic-sample cell or other sensitive device. A coaxial electric heater can be fabricated from an insulated copper wire, the copper core of which serves as the inner conductor. For example, in one approach, the insulated wire is dipped in a colloidal graphite emulsion, then the emulsion-coated wire is dried to form a thin, uniform, highly electrically resistive film that serves as the outer conductor. Then the film is coated with a protective layer of high-temperature epoxy except at the end to be electrically connected to the power supply. Next, the insulation is stripped from the wire at that end. Finally, electrical leads from the heater power supply are attached to the exposed portions of the wire and the resistive film. The resistance of the graphite film can be tailored via its thickness. Alternatively, the film can be made from an electrically conductive paint, other than a colloidal graphite emulsion, chosen to impart the desired resistance. Yet another alternative is to tailor the resistance of a graphite film by exploiting the fact that its resistance can be changed permanently within about 10 percent by heating it to a temperature above 300 C. A coaxial heater, with electrical leads attached, that has been bent into an almost full circle for edge heating of a circular window is shown. (In the specific application, there is a requirement for a heated cell window, through which an optical beam enters the cell.)

Concentration Dependent Electrical Transport Properties of Ni-Cr Binary Alloys

NASA Astrophysics Data System (ADS)

Suthar, P. H.; Khambholja, S. G.; Thakore, B. Y.; Gajjar, P. N.; Jani, A. R.

2011-07-01

The concentration dependent electrical transport properties viz. electrical resistivity and thermal conductivity of liquid Ni-Cr alloys are computed at 1400 K temperature. The electrical resistivity has been studied according to Faber-Ziman model in wide range of Cr concentration. In the present work, the electron-ion interaction is incorporated through our well tested local model potential with screening function due to Sarkar et al.. [S] along with the Hartree [H] dielectric function. Good agreement is achieved between the presently calculated results of resistivity as well as thermal conductivity with the experimental data found in the literature, confirming the applicability of model potential and Faber-Ziman model for such a study.

Optimization of power generating thermoelectric modules utilizing LNG cold energy

NASA Astrophysics Data System (ADS)

Jeong, Eun Soo

2017-12-01

A theoretical investigation to optimize thermoelectric modules, which convert LNG cold energy into electrical power, is performed using a novel one-dimensional analytic model. In the model the optimum thermoelement length and external load resistance, which maximize the energy conversion ratio, are determined by the heat supplied to the cold heat reservoir, the hot and cold side temperatures, the thermal and electrical contact resistances and the properties of thermoelectric materials. The effects of the thermal and electrical contact resistances and the heat supplied to the cold heat reservoir on the maximum energy conversion ratio, the optimum thermoelement length and the optimum external load resistance are shown.

Low-temperature thermoelectric properties of Pb doped Cu2SnSe3

NASA Astrophysics Data System (ADS)

Prasad K, Shyam; Rao, Ashok; Gahtori, Bhasker; Bathula, Sivaiah; Dhar, Ajay; Chang, Chia-Chi; Kuo, Yung-Kang

2017-09-01

A series of Cu2Sn1-xPbxSe3 (0 ≤ x ≤ 0.04) compounds was prepared by solid state synthesis technique. The electrical resistivity (ρ) decreased with increase in Pb content up to x = 0.01, thereafter it increased with further increase in x (till x = 0.03). However, the lowest value of electrical resistivity is observed for Cu2Sn0.96Pb0.04Se3. Analysis of electrical resistivity of all the samples suggests that small poloron hoping model is operative in the high temperature regime while variable range hopping is effective in the low temperature regime. The positive Seebeck coefficient (S) for pristine and doped samples in the entire temperature range indicates that the majority charge carriers are holes. The electronic thermal conductivity (κe) of the Cu2Sn1-xPbxSe3 compounds was estimated by the Wiedemann-Franz law and found that the contribution from κe is less than 1% of the total thermal conductivity (κ). The highest ZT 0.013 was achieved at 400 K for the sample Cu2Sn0.98Pb0.02Se3, about 30% enhancement as compared to the pristine sample.

Design of a low-cost system for electrical conductivity measurements of high temperature

NASA Astrophysics Data System (ADS)

Singh, Yadunath

2018-05-01

It is always a curiosity and interest among researchers working in the field of material science to know the impact of high temperature on the physical and transport properties of the materials. In this paper, we report on the design and working of a system for the measurements of electrical resistivity with high temperature. It was designed at our place and successively used for these measurements in the temperature range from room temperature to 500 ˚C.

Exploration of a new method in determining the glass transition temperature of BMGs by electrical resistivity

NASA Astrophysics Data System (ADS)

Guo, Jing; Zu, Fangqiu; Chen, Zhihao; Zheng, Shubin; Yuan, Yuan

2005-07-01

Based on a brief retrospect of the method in establishing Tg of the bulk metallic glasses (BMGs), some perplexities concerning this are pointed out. With the experimental results of Zr-Al-Ni-Cu-X (Nb,Ti) BMGs, a electrical resistivity method is proposed to determine the glass transition temperature of BMGs. With the method, we define two kinds of characteristic temperature related to the glass transition, Tg-dep and Tg-int, respectively. By comparing Tg-dep and Tg-int with Tg determined by the DSC method, we have found that, for the same alloy at the same heating rate, Tg-dep is very close to Tg-onset while Tg-int is approximate to Tg-mid. As a method to determine the glass transition temperature, the electrical resistivity method has proved to be more convenient and practical in comparison with the DSC method, especially when the DSC curve cannot show the glass transition character of BMGs. In addition, we would emphasize that when we refer to Tg, it is necessary to expatiate on the way of denoting the glass transition temperature, such as Tg-dep or Tg-int ( Tg-onset or Tg-mid), and on the heating rate, in order to avoid ambiguity.

Nondestructive evaluation of composite materials by electrical resistance measurement

NASA Astrophysics Data System (ADS)

Mei, Zhen

This dissertation investigates electrical resistance measurement for nondestructive evaluation of carbon fiber (CF) reinforced polymer matrix composites. The method involves measuring the DC electrical resistance in either the longitudinal or through thickness direction. The thermal history and thermal properties of thermoplastic/CF composites were studied by longitudinal and through-thickness resistance measurements. The resistance results were consistent with differential scanning calorimetry (DSC) and thermomechanical analysis (TMA) results. The resistance measurements gave more information on the melting of the polymer matrix than TMA. They were more sensitive to the glass transition of the polymer matrix than DSC. The through-thickness resistance decreased as autohesion progressed. The activation energy of autohesion was 21.2 kJ/mol for both nylon-6 and polyphenylene sulfide (PPS)/CF composites. Adhesive bonding and debonding were monitored in real-time by measurement of the through-thickness resistance between the adherends in an adhesive joint during heating and subsequent cooling. Debonding occurred during cooling when the pressure or temperature during prior bonding was not sufficiently high. A long heating time below the melting temperature (T m) was found to be detrimental to subsequent PPS adhesive joint development above Tm, due to curing reactions below Tm and consequent reduced mass flow response above Tm. A high heating rate (small heating time) enhanced the bonding more than a high pressure. The longitudinal resistance measurement was used to investigate the effects of temperature and stress on the interface between a concrete substrate and its epoxy/CF composite retrofit. The resistance of the retrofit was increased by bond degradation, whether the degradation was due to heat or stress. The degradation was reversible. Irreversible disturbance in the fiber arrangement occurred slightly as thermal or load cycling occurred, as indicated by the resistance decreasing cycle by cycle. This dissertation also addresses the use of the electrical resistance method to observe thermal and mechanical damage in real time. A temperature increase caused the interlaminar contact resistance to decrease reversibly within each thermal cycle, while thermal damage caused the resistance to decrease abruptly and irreversibly, due to matrix molecular movement and the consequent increase in the chance of fibers of one lamina touching those of an adjacent lamina. The through-thickness volume resistivity irreversibly and gradually decreased upon mechanical damage, which was probably fiber-matrix debonding. Moreover, it reversibly and abruptly increased upon matrix micro-structural change, which occurred reversibly near the peak stress of a stress cycle.

Temperature profile detector

DOEpatents

Tokarz, Richard D.

1983-01-01

A temperature profile detector shown as a tubular enclosure surrounding an elongated electrical conductor having a plurality of meltable conductive segments surrounding it. Duplicative meltable segments are spaced apart from one another along the length of the enclosure. Electrical insulators surround these elements to confine molten material from the segments in bridging contact between the conductor and a second electrical conductor, which might be the confining tube. The location and rate of growth of the resulting short circuits between the two conductors can be monitored by measuring changes in electrical resistance between terminals at both ends of the two conductors. Additional conductors and separate sets of meltable segments operational at differing temperatures can be monitored simultaneously for measuring different temperature profiles.

Processing effects on microstructure, percolation and resistive sensor properties of nickel-zirconium oxide cermet films on silicon substrates

NASA Astrophysics Data System (ADS)

Sundeen, John Edward, Jr.

Thin Ni-ZrO2 cermet films were developed on silicon substrates using solution based, metallo-organic deposition (MOD) technique. The nickel based cermet films on silicon are of interest for heater, temperature and flow sensor devices, particularly in automotive or aerospace applications at UP to 250°C. In this study, precursors for the NiO-ZrO2 composite films were derived from metal carboxylate and nitrate based solutions. Composition and heat treatment conditions were the main process variables for controlling the structure, particle size and morphology, on which the electrical properties depend. Electrical resistance behavior was studied for Ni-ZrO2 films with 25--78 vol.% Ni content. This Ni amount exceeds the percolation threshold for conduction. The dependence of the resistance on individual processing variables, including film thickness, ambient flow rate, sintering temperature and time, and specimen geometry was studied. Electrical characterization included establishing the percolative resistive behavior in the MOD Ni-ZrO2 films. A resistive percolation threshold (pc) at ˜25 vol.% Ni was found for 800°C sintered, 1mum thick Ni-ZrO2 films. Existing models including the general effective media (GEM) percolation equation, and mixture rules were used to develop a predictive expression for Ni-ZrO2 film resistance as a function of composition. Kinetic analysis of particle size in the 55 vol.% Ni cermet films was directly correlated to the sheet resistance (Rs) of the films. The temperature coefficient of resistance (TCR) was also correlated to R s, by the equation: (TCR)alpha = alphao - betaR s. These electrical characteristics make the films suitable for use as gas flow and temperature sensors. Calculated figure of merit (rho-TCR), values for the MOD Ni-ZrO2 films Compared favorably to commercial Pt and Ni based thin and thick film formulations used for heaters and thermal sensors. An added advantage of the MOD Ni-ZrO2, compared to the non-linear behavior of Ni, was that film resistance response to temperature is highly linear over the temperature range of 20--160°C. Select films could be heated to 45--100°C with a low (I2R) power input of 400mW-2W. Then films demonstrated stable hot resistance, high sensitivity and rapid response to gas flow. Significant accomplishments from this work included the development of: (a) MOD derived cermet films of 40--78 vol.% Ni, with high positive TCR of 2600--4250ppm/°C and Rs of 2.5--60%O/□/1mum which are highly suitable for thermal sensing applications, (b) A simple mixture rule rho = rhoo - m·VNi describing the film resistivity with composition; and (c) Expressions correlating film TCR and resistance to sintering time and temperature using particle growth kinetics.

Electrical resistivity of V-Cr-Ti alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zinkle, S.J.; Gubbi, A.N.; Eatherly, W.S.

1997-04-01

Room temperature electrical resistivity measurements have been performed on vanadium alloys containing 3-6%Cr and 3-6%Ti in order to evaluate the microstructural stability of these alloys. A nonlinear dependence on Cr and Ti concentration was observed, which suggests that either short range ordering or solute precipitation (perhaps in concert with interstitial solute clustering) has occurred in V-6Cr-6Ti.

Gravimetric water distribution assessment from geoelectrical methods (ERT and EMI) in municipal solid waste landfill.

PubMed

Dumont, Gaël; Pilawski, Tamara; Dzaomuho-Lenieregue, Phidias; Hiligsmann, Serge; Delvigne, Frank; Thonart, Philippe; Robert, Tanguy; Nguyen, Frédéric; Hermans, Thomas

2016-09-01

The gravimetric water content of the waste material is a key parameter in waste biodegradation. Previous studies suggest a correlation between changes in water content and modification of electrical resistivity. This study, based on field work in Mont-Saint-Guibert landfill (Belgium), aimed, on one hand, at characterizing the relationship between gravimetric water content and electrical resistivity and on the other hand, at assessing geoelectrical methods as tools to characterize the gravimetric water distribution in a landfill. Using excavated waste samples obtained after drilling, we investigated the influences of the temperature, the liquid phase conductivity, the compaction and the water content on the electrical resistivity. Our results demonstrate that Archie's law and Campbell's law accurately describe these relationships in municipal solid waste (MSW). Next, we conducted a geophysical survey in situ using two techniques: borehole electromagnetics (EM) and electrical resistivity tomography (ERT). First, in order to validate the use of EM, EM values obtained in situ were compared to electrical resistivity of excavated waste samples from corresponding depths. The petrophysical laws were used to account for the change of environmental parameters (temperature and compaction). A rather good correlation was obtained between direct measurement on waste samples and borehole electromagnetic data. Second, ERT and EM were used to acquire a spatial distribution of the electrical resistivity. Then, using the petrophysical laws, this information was used to estimate the water content distribution. In summary, our results demonstrate that geoelectrical methods represent a pertinent approach to characterize spatial distribution of water content in municipal landfills when properly interpreted using ground truth data. These methods might therefore prove to be valuable tools in waste biodegradation optimization projects. Copyright © 2016 Elsevier Ltd. All rights reserved.

Electrical conductivity and magnetic field dependent current-voltage characteristics of nanocrystalline nickel ferrite

NASA Astrophysics Data System (ADS)

Ghosh, P.; Bhowmik, R. N.; Das, M. R.; Mitra, P.

2017-04-01

We have studied the grain size dependent electrical conductivity, dielectric relaxation and magnetic field dependent current voltage (I - V) characteristics of nickel ferrite (NiFe2O4) . The material has been synthesized by sol-gel self-combustion technique, followed by ball milling at room temperature in air environment to control the grain size. The material has been characterized using X-ray diffraction (refined with MAUD software analysis) and Transmission electron microscopy. Impedance spectroscopy and I - V characteristics in the presence of variable magnetic fields have confirmed the increase of resistivity for the fine powdered samples (grain size 5.17±0.6 nm), resulted from ball milling of the chemical routed sample. Activation energy of the material for electrical charge hopping process has increased with the decrease of grain size by mechanical milling of chemical routed sample. The I - V curves showed many highly non-linear and irreversible electrical features, e.g., I - V loop and bi-stable electronic states (low resistance state-LRS and high resistance state-HRS) on cycling the electrical bias voltage direction during I-V curve measurement. The electrical dc resistance for the chemically routed (without milled) sample in HRS (∼3.4876×104 Ω) at 20 V in presence of magnetic field 10 kOe has enhanced to ∼3.4152×105 Ω for the 10 h milled sample. The samples exhibited an unusual negative differential resistance (NDR) effect that gradually decreased on decreasing the grain size of the material. The magneto-resistance of the samples at room temperature has been found substantially large (∼25-65%). The control of electrical charge transport properties under magnetic field, as observed in the present ferrimagnetic material, indicate the magneto-electric coupling in the materials and the results could be useful in spintronics applications.

Cryogenic Electric Motor Tested

NASA Technical Reports Server (NTRS)

Brown, Gerald V.

2004-01-01

Technology for pollution-free "electric flight" is being evaluated in a number of NASA Glenn Research Center programs. One approach is to drive propulsive fans or propellers with electric motors powered by fuel cells running on hydrogen. For large transport aircraft, conventional electric motors are far too heavy to be feasible. However, since hydrogen fuel would almost surely be carried as liquid, a propulsive electric motor could be cooled to near liquid hydrogen temperature (-423 F) by using the fuel for cooling before it goes to the fuel cells. Motor windings could be either superconducting or high purity normal copper or aluminum. The electrical resistance of pure metals can drop to 1/100th or less of their room-temperature resistance at liquid hydrogen temperature. In either case, super or normal, much higher current density is possible in motor windings. This leads to more compact motors that are projected to produce 20 hp/lb or more in large sizes, in comparison to on the order of 2 hp/lb for large conventional motors. High power density is the major goal. To support cryogenic motor development, we have designed and built in-house a small motor (7-in. outside diameter) for operation in liquid nitrogen.

Tilted fuel cell apparatus

DOEpatents

Cooper, John F.; Cherepy, Nerine; Krueger, Roger L.

2005-04-12

Bipolar, tilted embodiments of high temperature, molten electrolyte electrochemical cells capable of directly converting carbon fuel to electrical energy are disclosed herein. The bipolar, tilted configurations minimize the electrical resistance between one cell and others connected in electrical series. The tilted configuration also allows continuous refueling of carbon fuel.

Tunable electrical conductivity of individual graphene oxide sheets reduced at "low" temperatures.

PubMed

Jung, Inhwa; Dikin, Dmitriy A; Piner, Richard D; Ruoff, Rodney S

2008-12-01

Step-by-step controllable thermal reduction of individual graphene oxide sheets, incorporated into multiterminal field effect devices, was carried out at low temperatures (125-240 degrees C) with simultaneous electrical measurements. Symmetric hysteresis-free ambipolar (electron- and hole-type) gate dependences were observed as soon as the first measurable resistance was reached. The conductivity of each of the fabricated devices depended on the level of reduction (was increased more than 10(6) times as reduction progressed), strength of the external electrical field, density of the transport current, and temperature.

Packaging Technology Developed for High-Temperature Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.

2001-01-01

High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as sensors and electronics for space missions to the inner solar system, sensors for in situ combustion and emission monitoring, and electronics for combustion control for aeronautical and automotive engines. However, these devices cannot be used until they can be packaged in appropriate forms for specific applications. Suitable packaging technology for operation temperatures up to 500 C and beyond is not commercially available. Thus, the development of a systematic high-temperature packaging technology for SiC-based microsystems is essential for both in situ testing and commercializing high-temperature SiC sensors and electronics. In response to these needs, researchers at Glenn innovatively designed, fabricated, and assembled a new prototype electronic package for high-temperature electronic microsystems using ceramic substrates (aluminum nitride and aluminum oxide) and gold (Au) thick-film metallization. Packaging components include a ceramic packaging frame, thick-film metallization-based interconnection system, and a low electrical resistance SiC die-attachment scheme. Both the materials and fabrication process of the basic packaging components have been tested with an in-house-fabricated SiC semiconductor test chip in an oxidizing environment at temperatures from room temperature to 500 C for more than 1000 hr. These test results set lifetime records for both high-temperature electronic packaging and high-temperature electronic device testing. As required, the thick-film-based interconnection system demonstrated low (2.5 times of the room-temperature resistance of the Au conductor) and stable (decreased 3 percent in 1500 hr of continuous testing) electrical resistance at 500 C in an oxidizing environment. Also as required, the electrical isolation impedance between printed wires that were not electrically joined by a wire bond remained high (greater than 0.4 GW) at 500 C in air. The attached SiC diode demonstrated low (less than 3.8 W/mm2) and relatively consistent dynamic resistance from room temperature to 500 C. These results indicate that the prototype package and the compatible die-attach scheme meet the initial design standards for high-temperature, low-power, and long-term operation. This technology will be further developed and evaluated, especially with more mechanical tests of each packaging element for operation at higher temperatures and longer lifetimes.

Advanced Capacitor with SiC for High Temperature Applications

NASA Astrophysics Data System (ADS)

Tsao, B. H.; Ramalingam, M. L.; Bhattacharya, R. S.; Carr, Sandra Fries

1994-07-01

An advanced capacitor using SiC as the dielectric material has been developed for high temperature, high power, and high density electronic components for aircraft and aerospace application. The conventional capacitor consists of a large number of metallized polysulfone films that are arranged in parallel and enclosed in a sealed metal case. However, problems with electrical failure, thermal failure, and dielectric flow were experienced by Air Force suppliers for the component and subsystem for lack of suitable properties of the dielectric material. The high breakdown electrical field, high thermal conductivity, and high temperature operational resistance of SiC compared to similar properties of the conventional ceramic and polymer capacitor would make it a better choice for a high temperature, and high power capacitor. The quality of the SiC film was evaluated. The electrical parameters, such as the capacitance, dissipation factor, equivalent series resistance, and dielectric withstand voltage, were evaluated. The prototypical capacitors are currently being fabricated using SiC film.

High-Temperature Electromechanical Characterization of AlN Single Crystals.

PubMed

Kim, Taeyang; Kim, Jinwook; Dalmau, Rafael; Schlesser, Raoul; Preble, Edward; Jiang, Xiaoning

2015-10-01

Hexagonal AlN is a non-ferroelectric material and does not have any phase transition up to its melting point (>2000°C), which indicates the potential use of AlN for high-temperature sensing. In this work, the elastic, dielectric, and piezoelectric constants of AlN single crystals were investigated at elevated temperatures up to 1000°C by the resonance method. We used resonators of five different modes to obtain a complete set of material constants of AlN single crystals. The electrical resistivity of AlN at elevated temperature (1000°C) was found to be greater than 5 × 10(10) Ω · cm. The resonance frequency of the resonators, which was mainly determined by the elastic compliances, decreased linearly with increasing temperature, and was characterized by a relatively low temperature coefficient of frequency, in the range of -20 to -36 ppm/°C. For all the investigated resonator modes, the elastic constants and the electromechanical coupling factors exhibited excellent temperature stability, with small variations over the full temperature range, <11.2% and <17%, respectively. Of particular significance is that due to the pyroelectricity of AlN, both the dielectric and the piezoelectric constants had high thermal resistivity even at extreme high temperature (1000°C). Therefore, high electrical resistivity, temperature independence of electromechanical properties, as well as high thermal resistivity of the elastic, dielectric, and piezoelectric properties, suggest that AlN single crystals are a promising candidate for high-temperature piezoelectric sensing applications.

Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

NASA Astrophysics Data System (ADS)

Huang, Yanwei; Zhang, Qun; Xi, Junhua; Ji, Zhenguo

2012-07-01

Transparent p-type Li0.25Ni0.75O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li0.25Ni0.75O/n-SnO2:W was fabricated by depositing n-SnO2:W on top of the p-Li0.25Ni0.75O, which exhibits typical rectifying current-voltage characteristics.

Redistribution of oxygen ions in single crystal YBa2Cu3O7-x owing to external hydrostatic pressure

NASA Astrophysics Data System (ADS)

Boiko, Yu. I.; Bogdanov, V. V.; Vovk, R. V.; Khadzhai, G. Ya.; Savich, S. V.

2018-01-01

The effect of high hydrostatic pressure on the temperature dependences of the electrical resistance in the basal plane of single crystal YBa2Cu3O7-x with an oxygen deficit is studied. It is found that an external hydrostatic pressure P ≈ 7 kbar substantially intensifies the diffusive coalescence of oxygen clusters, i.e., causes an increase in their average size. This, in turn, produces an increased number of negative U-centers whose presence leads to the appearance of a phase capable of generating paired carriers of electrical charge and is, therefore, characterized by a higher transition temperature Tc. Changes in the form of the temperature and time dependences of the electrical resistivity under external hydrostatic pressure are discussed in terms of this same hypothesis regarding the mechanism of diffusive coalescence of oxygen clusters.

Synthesis and electrical properties of (Pb,Co)Sr2(Y,Ca)Cu2Oz

NASA Astrophysics Data System (ADS)

Tashiro, T.; Maeda, T.; Abe, R.; Takechi, S.; Takahashi, T.; Haruta, M.; Horii, S.

One of related materials to high-temperature superconductors (HTSC's) with nominal compositions of (Pb0.5Co0.5)Sr2(Y1xCax)Cu2Oz (x=0∼0.6) is synthesized and characterized. All samples are nearly single-phase, and its crystal structure is likely to be so-called "1-2-1-2" type which is one of typical structures of HTSC's. Electrical resistivity is decreased as x increases. While superconductivity is not observed at temperatures between room-temperature and 20 K for all samples, temperature dependence of the resistivity exhibits metallic behavior down to 150 K for x=0.5. Phase formation and transport behavior are discussed focusing on mixed valence-state of Co2+ and Co3+.

Study of electrical and magneto-transport properties in La0.5Sr0.5CoO3

NASA Astrophysics Data System (ADS)

Sharma, Gaurav; Tyagi, Shekhar; Rawat, R.; Sathe, V. G.

2018-04-01

Electric and Magneto-Transport properties of La0.5Sr0.5CoO3 have been investigated in the temperature range of 5-300K and under the magnetic field up to 8T. The para- to ferromagnetic transition is reflected in zero field R-T measurements in the form of change in slope. La0.5Sr0.5CoO3 is a well-known cluster glass compound with Tc˜250K. The compound show metallic behavior throughout the whole temperature range of measurement. The compound exhibits negative magneto-resistance around the magnetic ordering temperature due to suppression of spin disorder resistivity. The Seebeck coefficient as a function of temperature is also measured and the results are discussed.

Van der Waals pressure sensors using reduced graphene oxide composites

NASA Astrophysics Data System (ADS)

Jung, Ju Ra; Ahn, Sung Il

2018-04-01

Reduced graphene oxide (RGO) films intercalated with various polymers were fabricated by reaction-based self-assembly, and their characteristics as vacuum pressure sensors based on van der Waals interactions were studied. At low temperature, the electrical resistances of the samples decrease linearly with increasing vacuum pressure, whereas at high temperature the variation of the electrical resistance shows secondary order curves. Among all samples, the poly vinyl alcohol intercalated RGO shows the highest sensitivity, being almost two times more sensitive than reference RGO. All samples show almost the same signal for repetitive sudden pressure changes, indicating reasonable reproducibility and durability.

Electrical resistivity across the tricriticality in itinerant ferromagnet

NASA Astrophysics Data System (ADS)

Opletal, P.; Prokleška, J.; Valenta, J.; Sechovský, V.

2018-05-01

We investigate the discontinuous ferromagnetic phase diagram near tricritical point in UCo1-xRuxAl compounds by electrical resistivity measurements. Separation of phases in UCo0.995Ru0.005Al at ambient pressure and in UCo0.990Ru0.010Al at pressure of 0.2 GPa and disappearance of ferromagnetism at 0.4 GPa is confirmed. The exponent of temperature dependence of electrical resistivity implies change from Fermi liquid-like behavior to non-Fermi liquid at 0.2 GPa and reaches minimum at 0.4 GPa. Our results are compared to results obtained on the pure UCoAl and explanation for different exponents is given.

Studies on temperature coefficient of resistivity of Cu2Se - V2O5 nanocomposite

NASA Astrophysics Data System (ADS)

Sairam, S.; Rai, Ranjan; Molli, Muralikrishna

2018-05-01

Nanocomposite of Copper Selenide in Vanadium Pentoxide (Cu2Se-V2O5) was prepared and characterized using XRD for phase analysis, SEM for morphology, and EDAX for elemental analysis. Electrical resistivity measurement was carried out using van der Pauw method as a function of temperature from 35 °C to 170 °C for 5 mol% Cu2Se - 95 mol%V2O5 composite. The temperature coefficient of resistivity was found to be -1.8% per °C.

Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique

NASA Astrophysics Data System (ADS)

Ali, H. M.; Mohamed, H. A.; Mohamed, S. H.

2005-08-01

Indium tin oxide (ITO) is widely utilized in numerous industrial applications due to its unique combined properties of transparency to visible light and electrical conductivity. ITO films were deposited on glass substrates by an electron beam evaporation technique at room temperature from bulk samples, with different thicknesses. The film with 1500 Å thick was selected to perform annealing in the temperature range of 200 400 °C and annealing for varying times from 15 to 120 min at 400 °C. The X-ray diffraction of the films was analyzed in order to investigate its dependence on thickness, and annealing. Electrical and optical measurements were also carried out. Transmittance, optical energy gap, refractive index, carrier concentration, thermal emissivity and resistivity were investigated. It was found that the as-deposited films with different thicknesses were highly absorbing and have relatively poor electrical properties. The films become opaque with increasing the film thickness. After thermal annealing, the resistance decreases and a simultaneous variation in the optical transmission occurs. A transmittance value of 85.5% in the IR region and 82% in the visible region of the spectrum and a resistivity of 2.8 × 10-4 Ω Cm were obtained at annealing temperature of 400 °C for 120 min.

Multiple electrical phase transitions in Al substituted barium hexaferrite

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Supriya, Sweety; Kar, Manoranjan

2017-12-01

Barium hexaferrite is known to be a very good ferromagnetic material. However, it shows very good dielectric properties, i.e., the dielectric constant is comparable to that of the ferroelectric material. However, its crystal symmetry does not allow it to be a ferroelectric material. Hence, the electrical properties have revived the considerable research interest on these materials, not only for academic interest, but also for technological applications. There are a few reports on temperature dependent dielectric behavior of these materials. However, the exact cause of dielectric as well as electrical conductivity is yet to be established. Hence, Al (very good conducting material) substituted barium hexaferrite (BaFe12-xAlxO19, x = 0.0-4.0) has been prepared by following the modified sol-gel method to understand the ac and DC electrical properties of these materials. The crystal structure and parameters have been studied by employing the XRD and FTIR techniques. There are two transition temperatures, which have been observed in the temperature dependent ac dielectric and DC resistivity measurement. The response of dielectric behaviors to temperature is similar to that of the ferroelectric material; however, the dielectric polarization is due to the polaron hopping, which is evident from the DC resistivity analysis. Hence, the present observations lead to understand the electrical properties of barium hexaferrite. The frequency dependent dielectric dispersion can be understood by the modified Debye model. More interestingly, the dielectric constant decreases and DC resistivity increases with the increase in the Al concentration, which has the correlation between bond length modifications in the crystal due to substitution.

Quantitative impact of hydrothermal alteration on electrical resistivity in geothermal systems from a joint analysis of laboratory measurements and borehole data in Krafla area, N-E Iceland

NASA Astrophysics Data System (ADS)

Lévy, Léa; Páll Hersir, Gylfi; Flóvenz, Ólafur; Gibert, Benoit; Pézard, Philippe; Sigmundsson, Freysteinn; Briole, Pierre

2016-04-01

Rock permeability and fluid temperature are the two most decisive factors for a successful geothermal drilling. While those parameters are only measured from drilling, they might be estimated on the basis of their impact on electrical resistivity that might be imaged from surface soundings, for example through TEM (Transient Electro Magnetic) down to one km depth. The electrical conductivity of reservoir rocks is the sum of a volume term depending on fluid parameters and a surface term related to rock alteration. Understanding the link between electrical resistivity and geothermal key parameters requires the knowledge of hydrothermal alteration and its petrophysical signature with the Cation Exchange Capacity (CEC). Fluid-rock interactions related to hydrothermal circulation trigger the precipitation of alteration minerals, which are both witnesses of the temperature at the time of reaction and new paths for the electrical current. Alteration minerals include zeolites, smectites, chlorites, epidotes and amphiboles among which low temperatures parageneses are often the most conductive. The CEC of these mineral phases contributes to account for surface conductivity occuring at the water-rock interface. In cooling geothermal systems, these minerals constitute in petrophysical terms and from surface electrical conduction a memory of the equilibrium phase revealed from electrical probing at all scales. The qualitative impact of alteration minerals on resistivity structure has been studied over the years in the Icelandic geothermal context. In this work, the CEC impact on pore surfaces electrical conductivity is studied quantitatively at the borehole scale, where several types of volcanic rocks are mixed together, with various degrees of alteration and porosity. Five boreholes located within a few km at the Krafla volcano, Northeast Iceland, constitute the basis for this study. The deepest and reference hole, KJ-18, provides cuttings of rock and logging data down to 2215 m depth; CEC measurements performed on cuttings show. KH-1 and KH-3 have cores and logs in the top 200 m only. Boreholes KH-5 and KH-6 sample cores with higher temperature alteration minerals down to 600 m. Together, these 4 shallow holes cover the diversity of rock types and alterations facies found in KJ-18. The petrophysical calibration obtained from cores will then be upscaled to log data analysis in KJ-18: porosity, formation factor, permeability, acoustic velocity, electrical surface conduction at different temperatures and CEC. This research is supported by the IMAGE FP7 EC project (Integrated Methods for Advanced Geothermal Exploration, grant agreement No. 608553).

Effect of Carbon on the Electrical Properties of Copper Oxide-Based Bulk Composites

NASA Astrophysics Data System (ADS)

Kalinin, Yu. E.; Kashirin, M. A.; Makagonov, V. A.; Pankov, S. Yu.; Sitnikov, A. V.

2018-04-01

The effect of carbon filler on the electrical resistance and the thermopower of copper oxide-based composites produced by ceramic technology by hot pressing has been studied. It is found that the dependences of the electrical resistivity on the filler concentration are characteristic by S-like curves that are typical of percolation systems; in this case, the resistivity decreases more substantially as the carbon content increases as compared to the decrease in thermopower value, which is accompanied by the existence of the maximum of the factor of thermoelectric power near the percolation threshold. The studies of the temperature dependences of the resistivity and the thermopower at low temperatures show that, in the range 240-300 K, the predominant mechanism of the electrotransfer of all the composites under study is the hopping mechanism. At temperatures lower than 240 K, the composites with a nanocrystalline CuO matrix have a hopping conductivity with a variable hopping distance over localized states of the matrix near the Fermi level, which is related to the conductivity over intergrain CuO boundaries. A schematic model of the band structure of nanocrystalline CuO with carbon filler is proposed on the base of the analysis of the found experimental regularities of the electrotransfer.

Effects of coupling between sample and electrode on the electrical resistivity measurements of conductive samples

NASA Astrophysics Data System (ADS)

Lee, T. J.; Lee, S. K.

2015-12-01

A resistivity measurement system for conductive core samples has been setup using a high resolution nano-voltmeter. Using the system, in this study, various coupling effects between electrodes and the samples are discussed including contact resistance, lead resistance, temperature dependence, and heat produced within the samples by applied current. The lead resistance was over 10 times higher than the resistance of the conductive samples such as graphite or nichrome, even though the electrodes and lead lines were made of silver. Furthermore, lead resistance itself showed very strong temperature dependence, so that it is essential to subtract the lead resistance from the measured values at corresponding temperature. Minimization of contact resistance is very important, so that the axial loads are needed as big as possible unless the deformation of sample occurs.

The electrical transport properties of liquid Rb using pseudopotential theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, A. B., E-mail: amit07patel@gmail.com; Bhatt, N. K., E-mail: amit07patel@gmail.com; Thakore, B. Y., E-mail: amit07patel@gmail.com

2014-04-24

Certain electric transport properties of liquid Rb are reported. The electrical resistivity is calculated by using the self-consistent approximation as suggested by Ferraz and March. The pseudopotential due to Hasegawa et al for full electron-ion interaction, which is valid for all electrons and contains the repulsive delta function due to achieve the necessary s-pseudisation was used for the calculation. Temperature dependence of structure factor is considered through temperature dependent potential parameter in the pair potential. Finally, thermo-electric power and thermal conductivity are obtained. The outcome of the present study is discussed in light of other such results, and confirms themore » applicability of pseudopotential at very high temperature via temperature dependent pair potential.« less

Effect of neodymium substitution on the electric and dielectric properties of Mn-Ni-Zn ferrite

NASA Astrophysics Data System (ADS)

Agami, W. R.

2018-04-01

Ferrite samples of Mn0.5Ni0.1Zn0.4NdxFe2-xO4 (x = 0.0, 0.01, 0.02, 0.05, 0.075 and 0.1) have been prepared by usual ceramic method. The temperature and composition dependences of the dc electric resistivity (ρdc) were studied. The frequency and composition dependences of the ac electric resistivity (ρac) and dielectric parameters (dielectric constant ε' and dielectric loss ε'') have been investigated. ρdc was found to decrease with temperature for all samples while it increases with increasing Nd3+ concentration. On the other hand, ρac and the dielectric properties were found to decrease with increasing the frequency while ρac increases and both ε' and ε'' decrease with increasing Nd3+ concentration. These results were explained by the Maxwell-Wagner two-layer model and Koops's theory. The improvement in dc and ac electric resistivities shows that these prepared materials are valid for decreasing the eddy current losses at high frequencies, so they can be used in the fabrication of multilayer chip inductor (MLCI) devices.

Effect of Abrasive Machining on the Electrical Properties Cu86Mn12Ni2 Alloy Shunts

PubMed Central

Misti, Siti Nabilah; Bell, David

2017-01-01

This paper studies the effect of abrasive trimming on the electrical properties of Cu86Mn12Ni2 Manganin alloy shunt resistors. A precision abrasive trimming system for fine tuning the resistance tolerance of high current Manganin shunt resistors is proposed. The system is shown to be capable of reducing the resistance tolerance of 100 μΩ shunts from their standard value of ±5% to <±1% by removing controlled amounts of Manganin material using a square cut trim geometry. The temperature coefficient of resistance (TCR), high current, and high temperature performance of the trimmed shunts was compared to that of untrimmed parts to determine if trimming had any detrimental effect on these key electrical performance parameters of the device. It was shown that the TCR value was reduced following trimming with typical results of +106 ppm/°C and +93 ppm/°C for untrimmed and trimmed parts respectively. When subjected to a high current of 200 A the trimmed parts showed a slight increase in temperature rise to 203 °C, as compared to 194 °C for the untrimmed parts, but both had significant temporary increases in resistance of up to 1.3 μΩ. The results for resistance change following high temperature storage at 200 °C for 168 h were also significant for both untrimmed and trimmed parts with shifts of 1.85% and 2.29% respectively and these results were related to surface oxidation of the Manganin alloy which was accelerated for the freshly exposed surfaces of the trimmed part. PMID:28773236

Effect of Abrasive Machining on the Electrical Properties Cu86Mn12Ni₂ Alloy Shunts.

PubMed

Misti, Siti Nabilah; Birkett, Martin; Penlington, Roger; Bell, David

2017-07-29

This paper studies the effect of abrasive trimming on the electrical properties of Cu 86 Mn 12 Ni₂ Manganin alloy shunt resistors. A precision abrasive trimming system for fine tuning the resistance tolerance of high current Manganin shunt resistors is proposed. The system is shown to be capable of reducing the resistance tolerance of 100 μΩ shunts from their standard value of ±5% to <±1% by removing controlled amounts of Manganin material using a square cut trim geometry. The temperature coefficient of resistance (TCR), high current, and high temperature performance of the trimmed shunts was compared to that of untrimmed parts to determine if trimming had any detrimental effect on these key electrical performance parameters of the device. It was shown that the TCR value was reduced following trimming with typical results of +106 ppm/°C and +93 ppm/°C for untrimmed and trimmed parts respectively. When subjected to a high current of 200 A the trimmed parts showed a slight increase in temperature rise to 203 °C, as compared to 194 °C for the untrimmed parts, but both had significant temporary increases in resistance of up to 1.3 μΩ. The results for resistance change following high temperature storage at 200 °C for 168 h were also significant for both untrimmed and trimmed parts with shifts of 1.85% and 2.29% respectively and these results were related to surface oxidation of the Manganin alloy which was accelerated for the freshly exposed surfaces of the trimmed part.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sang-Eui; Moon, Kyoung-Seok; Sohn, Yoonchul, E-mail: yoonchul.son@samsung.com

Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Agmore » interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.« less

Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

NASA Astrophysics Data System (ADS)

Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai; Snead, Lance L.

2016-03-01

Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperature and removes possible user-introduced error while standardizing the analysis. This method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.

Effect of high pressure on the electrical resistivity of optimally doped YBa2Cu3O7-δ single crystals with unidirectional planar defects

NASA Astrophysics Data System (ADS)

Vovk, R. V.; Vovk, N. R.; Khadzhai, G. Ya.; Goulatis, I. L.; Chroneos, A.

2013-08-01

In the present work the effect of hydrostatic pressure up to 10 kbar on in-plane electrical resistivity of well-structured YBa2Cu3O7-δ (δ<0.15, Тс≈91 K, ΔТс≈0.3 K) single crystals was investigated. The influence of the twin boundaries on the electrical resistivity was minimized. The resistivities temperature dependences in the interval Тс up to 300 K can be approximated by taking into account the linear term at high temperatures and the fluctuation conductivity (Maki-Thompson model) near Тс. The parameters of the linear dependence of R(T) are decreasing as the pressure is increasing. Тс increases linearly when the pressure increases with the derivative dTc/dP≈0.080 K/kbar. Among the Maki-Thompson model parameters the inter-layer distance, d, can be considered to be independent from pressure, the transverse coherence length, ξc(0)∼0.1d.

Precipitation phenomena in and electrical resistivity of high-temperature treated langatate (La3Ta0.5Ga5.5O14).

PubMed

Yaokawa, Ritsuko; Kimura, Hiromitsu; Aota, Katsumi; Uda, Satoshi

2011-06-01

La(3)Ta(0.5)Ga(5.5)O(14) (LTG) single crystals, which have no phase transition up to the melting point, were heat-treated in air at temperatures from 1000°C to 1450°C for 10 h. LaTaO(4) (LT) and LaGaO(3) (LG), which coexist with LTG in the three-phase region on the Ga-poor side, precipitated on the surface of the crystal for heat treatments above 1300°C because of Ga evaporation during the heat treatment. The Ga-poor state near the surface of the 1450°C heat-treated specimen was confirmed by electron probe micro-analysis measurements. The electrical resistivity of LTG single crystals decreased by heat treatment in the range of 1000°C to 1200°C for 10 h in air, where no precipitation was observed, whereas the resistivity increased with heat treatment over 1400°C for 10 h in air. The electrical resistivity of the Ga-poor surface region was higher than that of the interior.

Electric field modulated ferromagnetism in ZnO films deposited at room temperature

NASA Astrophysics Data System (ADS)

Bu, Jianpei; Liu, Xinran; Hao, Yanming; Zhou, Guangjun; Cheng, Bin; Huang, Wei; Xie, Jihao; Zhang, Heng; Qin, Hongwei; Hu, Jifan

2018-04-01

The ZnO film deposited at room temperature, which is composed of the amorphous-phase background plus a few nanograins or nanoclusters (about 1-2 nm), exhibits room temperature ferromagnetism (FM). Such FM is found to be connected with oxygen vacancies. For the Ta/ZnO/Pt device based on the medium layer ZnO deposited at room temperature, the saturation magnetization not only is modulated between high and low resistive states by electric voltage with DC loop electric current but also increases/decreases through adjusting the magnitudes of positive/negative DC sweeping voltage. Meanwhile, the voltage-controlled conductance quantization is observed in Ta/ZnO/Pt, accompanying the voltage-controlled magnetization. However, the saturation magnetization of the Ta/ZnO/Pt device becomes smaller under positive electric voltage and returns in some extent under negative electric voltage, when the DC loop electric current is not applied.

Compact tunable and reconfigurable microwave photonic filter for satellite payloads

NASA Astrophysics Data System (ADS)

Santos, M. C.; Yoosefi, O.

2017-11-01

The trend towards the photonic processing of electrical signals at microwave frequencies for satellite payloads is increasing at a breathtaking pace, mainly spurred by prospects of wide electrical bandwidth operation, low mass and volume, reduced electrical noise levels, immunity to electromagnetic interferences and resistance to both temperature and radiation.

Controlling the anomalous Hall effect by electric-field-induced piezo-strain in Fe40Pt60/(001)-Pb(Mg1/3Nb2/3)0.67Ti0.33O3 multiferroic heterostructures

NASA Astrophysics Data System (ADS)

Yang, Yuanjun; Yao, Yingxue; Chen, Lei; Huang, Haoliang; Zhang, Benjian; Lin, Hui; Luo, Zhenlin; Gao, Chen; Lu, Y. L.; Li, Xiaoguang; Xiao, Gang; Feng, Ce; Zhao, Y. G.

2018-01-01

Electric-field control of the anomalous Hall effect (AHE) was investigated in Fe40Pt60/(001)-Pb(Mg1/3Nb2/3)0.67Ti0.33O3 (FePt/PMN-PT) multiferroic heterostructures at room temperature. It was observed that a very large Hall resistivity change of up to 23.9% was produced using electric fields under a magnetic field bias of 100 Oe. A pulsed electric field sequence was used to generate nonvolatile strain to manipulate the Hall resistivity. Two corresponding nonvolatile states with distinct Hall resistivities were achieved after the electric fields were removed, thus enabling the encoding of binary information for memory applications. These results demonstrate that the Hall resistivity can be reversibly switched in a nonvolatile manner using programmable electric fields. Two remanent magnetic states that were created by electric-field-induced piezo-strain from the PMN-PT were attributed to the nonvolatile and reversible properties of the AHE. This work suggests that a low-energy-consumption-based approach can be used to create nonvolatile resistance states for spintronic devices based on electric-field control of the AHE.

Relating the Electrical Resistance of Fresh Concrete to Mixture Proportions.

PubMed

Obla, K; Hong, R; Sherman, S; Bentz, D P; Jones, S Z

2018-01-01

Characterization of fresh concrete is critical for assuring the quality of our nation's constructed infrastructure. While fresh concrete arriving at a job site in a ready-mixed concrete truck is typically characterized by measuring temperature, slump, unit weight, and air content, here the measurement of the electrical resistance of a freshly cast cylinder of concrete is investigated as a means of assessing mixture proportions, specifically cement and water contents. Both cement and water contents influence the measured electrical resistance of a sample of fresh concrete: the cement by producing ions (chiefly K + , Na + , and OH - ) that are the main source of electrical conduction; and the water by providing the main conductive pathways through which the current travels. Relating the measured electrical resistance to attributes of the mixture proportions, such as water-cement ratio by mass ( w/c ), is explored for a set of eleven different concrete mixtures prepared in the laboratory. In these mixtures, w/c , paste content, air content, fly ash content, high range water reducer dosage, and cement alkali content are all varied. Additionally, concrete electrical resistance data is supplemented by measuring the resistivity of its component pore solution obtained from 5 laboratory-prepared cement pastes with the same proportions as their corresponding concrete mixtures. Only measuring the concrete electrical resistance can provide a prediction of the mixture's paste content or the product w*c ; conversely, when pore solution resistivity is also available, w/c and water content of the concrete mixture can be reasonably assessed.

Relating the Electrical Resistance of Fresh Concrete to Mixture Proportions

PubMed Central

Obla, K.; Hong, R.; Sherman, S.; Bentz, D.P.; Jones, S.Z.

2018-01-01

Characterization of fresh concrete is critical for assuring the quality of our nation’s constructed infrastructure. While fresh concrete arriving at a job site in a ready-mixed concrete truck is typically characterized by measuring temperature, slump, unit weight, and air content, here the measurement of the electrical resistance of a freshly cast cylinder of concrete is investigated as a means of assessing mixture proportions, specifically cement and water contents. Both cement and water contents influence the measured electrical resistance of a sample of fresh concrete: the cement by producing ions (chiefly K+, Na+, and OH-) that are the main source of electrical conduction; and the water by providing the main conductive pathways through which the current travels. Relating the measured electrical resistance to attributes of the mixture proportions, such as water-cement ratio by mass (w/c), is explored for a set of eleven different concrete mixtures prepared in the laboratory. In these mixtures, w/c, paste content, air content, fly ash content, high range water reducer dosage, and cement alkali content are all varied. Additionally, concrete electrical resistance data is supplemented by measuring the resistivity of its component pore solution obtained from 5 laboratory-prepared cement pastes with the same proportions as their corresponding concrete mixtures. Only measuring the concrete electrical resistance can provide a prediction of the mixture’s paste content or the product w*c; conversely, when pore solution resistivity is also available, w/c and water content of the concrete mixture can be reasonably assessed. PMID:29882546

Electrical resistivity of La

DOE Office of Scientific and Technical Information (OSTI.GOV)

Legvold, S.; Burgardt, P.; Beaudry, B.J.

1977-09-15

The electrical resistivity of high-purity double hexagonal-close-packed (dhcp) ..cap alpha..-La from 5 to 300 K is reported. Measurements were made on small-grained samples prepared by heat treatment of cold-worked lanthanum. Measurements were also made on samples cut in different directions from an ingot slowly cooled from the molten state. The room-temperature results were all within 2% of the mean value. Chemically pure ..beta..-La (fcc) cannot be retained at room temperature, hence, measurements were made on an fcc sample of La containing 0.2-at. % Gd and approx. 0.8-at. % total interstitial nonmetallic impurities. The cubic form has almost the same typemore » of temperature dependence as the dhcp form, but has a 10% lower magnitude.« less

Coastal Permafrost Bluff Response to Summer Warming, Barter Island, NE Alaska

NASA Astrophysics Data System (ADS)

Richmond, B. M.; Gibbs, A.; Johnson, C. D.; Swarzenski, P. W.; Oberle, F. J.; Tulaczyk, S. M.; Lorenson, T. D.

2016-12-01

Observations of warming air and sea temperatures in the Arctic are leading to longer periods of permafrost thaw and ice-free conditions during summer, which lead to increased exposure to coastal storm surge, wave impacts, and heightened erosion. Recently collected air and soil (bluff) temperatures, atmospheric pressure, water levels, time-lapse photography, aerial photography and satellite imagery, and electrical resistivity tomography (ERT) surveys were used to document coastal bluff morphological response to seasonal warming. Data collection instruments and time-lapse cameras installed overlooking a bluff face on the exposed open ocean coast and within an erosional gully were used to create an archive of hourly air temperature, pressure, bluff morphology, and sea-state conditions allowing for documentation of individual bluff failure events and coincident meteorology. Permafrost boreholes as deep as 6 m from the upper bluff tundra surface were fitted with thermistor arrays to record a high resolution temperature record that spanned an initial frozen state, a summer thaw cycle, and subsequent re-freezing. Late summer ERT surveys were used to link temperature observations to subsurface electrical resistivities and active-layer dynamics. Preliminary observations suggest surface warming and active layer growth are responsible for a significant amount of bluff face failures that are exacerbated in the shore perpendicular gullies and along the exposed ocean coast. Electrical resistivity surveys and geochemical data reveal concentrated brines at depth, which likely contribute to enhanced, localized erosion in weakened strata.

Evaluation of Temperature-Dependent Effective Material Properties and Performance of a Thermoelectric Module

NASA Astrophysics Data System (ADS)

Chien, Heng-Chieh; Chu, En-Ting; Hsieh, Huey-Lin; Huang, Jing-Yi; Wu, Sheng-Tsai; Dai, Ming-Ji; Liu, Chun-Kai; Yao, Da-Jeng

2013-07-01

We devised a novel method to evaluate the temperature-dependent effective properties of a thermoelectric module (TEM): Seebeck coefficient ( S m), internal electrical resistance ( R m), and thermal conductance ( K m). After calculation, the effective properties of the module are converted to the average material properties of a p- n thermoelectric pillar pair inside the module: Seebeck coefficient ( S TE), electrical resistivity ( ρ TE), and thermal conductivity ( k TE). For a commercial thermoelectric module (Altec 1091) chosen to verify the novel method, the measured S TE has a maximum value at bath temperature of 110°C; ρ TE shows a positive linear trend dependent on the bath temperature, and k TE increases slightly with increasing bath temperature. The results show the method to have satisfactory measurement performance in terms of practicability and reliability; the data for tests near 23°C agree with published values.

Effects of Annealing Temperature on Properties of Ti-Ga-Doped ZnO Films Deposited on Flexible Substrates.

PubMed

Chen, Tao-Hsing; Chen, Ting-You

2015-11-03

An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga-doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

Fabrication of CFRP/Al Active Laminates

NASA Astrophysics Data System (ADS)

Asanuma, Hiroshi; Haga, Osamu; Ohira, Junichiro; Takemoto, Kyosuke; Imori, Masataka

This paper describes fabrication and evaluation of the active laminate. It was made by hot-pressing of an aluminum plate as a high CTE material, a unidirectional CFRP prepreg as a low CTE material and an electric resistance heater, a KFRP prepreg as a low CTE material and an insulator between them, and copper foils as electrodes. In this study, fabricating conditions and performances such as curvature change and output force were examined. Under optimized fabricating conditions, it became clear that 1) the curvature of the active laminate linearly changes as a function of temperature, between room temperature and its hot pressing temperature without hysteresis by electric resistance heating of carbon fiber in the CFRP layer and cooling, and 2) the output force against a fixed punch almost linearly increases with increasing temperature during heating from 313K up to around the glass transition temperature of the epoxy matrix.

Effect of 50 MeV Li3 + irradiation on structural and electrical properties of Mn-doped ZnO

NASA Astrophysics Data System (ADS)

Neogi, S. K.; Chattopadhyay, S.; Banerjee, Aritra; Bandyopadhyay, S.; Sarkar, A.; Kumar, Ravi

2011-05-01

The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn1 - xMnxO-type system. Zn1 - xMnxO (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li3 + ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn0.98Mn0.02O, whereas for the Zn0.96Mn0.04O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn0.98Mn0.02O, the observed sharp decrease in room temperature resistivity (ρRT) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn0.96Mn0.04O, ρRT decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn0.98Mn0.02O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn0.96Mn0.04O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

Effect of 50 MeV Li3+ irradiation on structural and electrical properties of Mn-doped ZnO.

PubMed

Neogi, S K; Chattopadhyay, S; Banerjee, Aritra; Bandyopadhyay, S; Sarkar, A; Kumar, Ravi

2011-05-25

The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn(1 - x)Mn(x)O-type system. Zn(1 - x)Mn(x)O (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li(3+) ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn(0.98)Mn(0.02)O, whereas for the Zn(0.96)Mn(0.04)O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn(0.98)Mn(0.02)O, the observed sharp decrease in room temperature resistivity (ρ(RT)) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn(0.96)Mn(0.04)O, ρ(RT) decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn(0.98)Mn(0.02)O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn(0.96)Mn(0.04)O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

Characterization of ZnAl cast alloys with Na addition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gancarz, Tomasz, E-mail: t.gancarz@imim.pl; Cempura, Grzegorz; Skuza, Wojciech

2016-01-15

This study was aimed at evaluating the microstructural change and thermal, electrical and mechanical properties with the addition of Na to eutectic ZnAl alloys. Solders based on eutectic ZnAl containing 0.2 to 3.0 (wt.%) of Na were developed for high temperature solder. Differential scanning calorimetry (DSC) measurements were performed to determine the melting temperatures of the alloys. Thermal linear expansion and electrical resistivity measurements were performed over − 50 °C to 300 °C and 30 °C to 300 °C temperature ranges, respectively. The microstructure of the specimens was analyzed using scanning (SEM) and transmission electron microscopy (TEM) techniques. Chemical microanalysismore » was performed by energy-dispersive X-ray spectroscopy (EDS) on SEM and TEM. The precipitates of NaZn{sub 13} were confirmed by X-ray diffraction (XRD) measurements and selected area electron diffraction (SAED) techniques. The addition of Na to eutectic ZnAl alloy increased the electrical resistivity and reduced the coefficient of thermal expansion; however, the melting point did not change. The mechanical properties, strain and microhardness increased with Na content in alloys. - Highlights: • High temperature soldering materials of ZnAl with Na were designed and characterized. • Precipitates of NaZn{sub 13}were observed and confirmed using TEM and XRD. • Addition of Na to eutectic ZnAl cussed increased mechanical properties. • NaZn{sub 13} caused increased electrical resistivity and microhardness, and reduced the CTE.« less

Layered ultra-thin coherent structures used as electrical resistors having low-temperature coefficient of resistivity

DOEpatents

Werner, T.R.; Falco, C.M.; Schuller, I.K.

1982-08-31

A thin film resistor having a controlled temperature coefficient of resistance (TCR) ranging from negative to positive degrees kelvin and having relatively high resistivity. The resistor is a multilayer superlattice crystal containing a plurality of alternating, ultra-thin layers of two different metals. TCR is varied by controlling the thickness of the individual layers. The resistor can be readily prepared by methods compatible with thin film circuitry manufacturing techniques.

Attaching Copper Wires to Magnetic-Reed-Switch Leads

NASA Technical Reports Server (NTRS)

Kamila, Rudolf

1987-01-01

Bonding method reliably joins copper wires to short iron-alloy leads from glass-encased dry magnetic-reed switch without disturbing integrity of glass-to-metal seal. Joint resistant to high temperatures and has low electrical resistance.

Electrical transport in AZO nanorods

NASA Astrophysics Data System (ADS)

Yildiz, A.; Cansizoglu, H.; Karabacak, T.

2015-10-01

Al-doped ZnO (AZO) nanorods (NRs) with different lengths were deposited by utilizing glancing angle deposition (GLAD) technique in a DC sputter system at room temperature. The structural and optical characteristics of the NRs were investigated by the X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-vis-NIR spectroscopy measurements. A band gap of about 3.5 eV was observed for the NRs. A novel capping process utilizing varying deposition angles was used to introduce a blanket metal top contact for the electrical characterization of NRs. Current-voltage (I-V) measurements were used to properly evaluate the approximate resistivity of a single NR. The electrical conduction was found to be governed by the thermally activated transport mechanism. Activation energy was determined as 0.14 eV from temperature dependent resistivity data.

Jumps in electric potential and in temperature at the electrode surfaces of the solid oxide fuel cell

NASA Astrophysics Data System (ADS)

Kjelstrup, S.; Bedeaux, D.

1997-02-01

The electric potential profile and the temperature profile across a formation cell have been derived for the first time, using irreversible thermodynamics for bulk and surface systems. The method was demonstrated with the solid oxide fuel cell. The expression for the cell potential reduces to the classical formula when we assume equilibrium for polarized oxygen atoms across the electrolyte. Using data from the literature, we show for some likely assumptions, how the cell potential is generated at the anode, and how the energy is dissipated throughout the cell. The thermal gradient amounts to 5 × 10 8 Km -1 when the current density is 10 4 Am -2 and the thermal resistance of the surface scales like the electrical resistance.

Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Niteesh Reddy, Varra; Reddy, M. Siva Pratap; Gunasekhar, K. R.; Lee, Jung-Hee

2018-04-01

This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current-voltage-temperature, turn-on voltage-temperature and series resistance-temperature in the high-temperature range of 300-420 K. It is observed that an exponential decrease in the series resistance ( R S) and increase in the ideality factor ( n) and barrier height ( ϕ b) with increase in temperature. The thermal coefficient ( K j) is determined to be - 1.3 mV K-1 at ≥ 300 K. The effective ϕ b is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature ( T 0) resulting from the Cheung's functions [d V/d(ln I) vs. I and H( I) vs. I], is seen that there is good agreement between the T 0 values from both Cheung's functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.

Simple theory for the dependence of the electrical resistance of the magnetic superconductors TmRh/sub 4/B/sub 4/ and ErRh/sub 4/B/sub 4/ on temperature and field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meijer, H.C.; Andriessen, J.; Postma, H.

1986-04-01

A phenomenological description for the temperature and magnetic field dependence of the electrical resistance R of polycrystalline samples of the reentrant superconductors TmRh/sub 4/B/sub 4/ and ErRh/sub 4/B/sub 4/ is given on the basis of two assumptions: (1) Due to the anisotropic values of the rare-earth ions the critical field of the crystallites depends on the direction of the externally applied field, which leads to an increasing number of normal crystallites with increasing field. For the dependence of the magnetization M on temperature, a molecular field model is used. (2) The bulk resistance R of the sample depends in amore » linear way on the fraction of normal crystallites. There is a qualitative agreement with the experimental results of Hamaker et al. and of Ott et al. It is also shown that an applied field H/sub e/ is equal to the orbital critical field H(/sub c//sub 2/ for the temperature at which R(H/sub e/, T) starts deviating from the resistance of the normal sample.« less

Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

DOE PAGES

Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai; ...

2016-01-14

Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperaturemore » and removes possible user-introduced error while standardizing the analysis. In addition, this method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.« less

Electrical Resistance as a NDE Technique to Monitor Processing and Damage Accumulation in SiC/SiC Composites

NASA Technical Reports Server (NTRS)

Smith, Craig; Morscher, Gregory N.; Xia, Zhenhai

2008-01-01

Ceramic matrix composites are suitable for high temperature structural applications such as turbine airfoils and hypersonic thermal protection systems. The employment of these materials in such applications is limited by the ability to process components reliable and to accurately monitor and predict damage evolution that leads to failure under stressed-oxidation conditions. Current nondestructive methods such as ultrasound, x-ray, and thermal imaging are limited in their ability to quantify small scale, transverse, in-plane, matrix cracks developed over long-time creep and fatigue conditions. Electrical resistance of SiC/SiC composites is one technique that shows special promise towards this end. Since both the matrix and the fibers are conductive, changes in matrix or fiber properties should relate to changes in electrical conductivity along the length of a specimen or part. Initial efforts to quantify the electrical resistance of different fiber and different matrix SiC/SiC composites will be presented. Also, the effect of matrix cracking on electrical resistivity for several composite systems will be presented. The implications towards electrical resistance as a technique applied to composite processing, damage detection, and life-modeling will be discussed.

Solid oxide fuel cell operable over wide temperature range

DOEpatents

Baozhen, Li; Ruka, Roswell J.; Singhal, Subhash C.

2001-01-01

Solid oxide fuel cells having improved low-temperature operation are disclosed. In one embodiment, an interfacial layer of terbia-stabilized zirconia is located between the air electrode and electrolyte of the solid oxide fuel cell. The interfacial layer provides a barrier which controls interaction between the air electrode and electrolyte. The interfacial layer also reduces polarization loss through the reduction of the air electrode/electrolyte interfacial electrical resistance. In another embodiment, the solid oxide fuel cell comprises a scandia-stabilized zirconia electrolyte having high electrical conductivity. The scandia-stabilized zirconia electrolyte may be provided as a very thin layer in order to reduce resistance. The scandia-stabilized electrolyte is preferably used in combination with the terbia-stabilized interfacial layer. The solid oxide fuel cells are operable over wider temperature ranges and wider temperature gradients in comparison with conventional fuel cells.

PHASE DIAGRAM FOR THE SYSTEM TITANIUM-TIN (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kornilov, I.I.; Nartova, T.T.

1960-03-01

Differential thermal analysis, microstructural analyses, and determinations of hardness values and electric resistance were used to construct a diagram of state for the binary system Ti-Sn up to the composition of the compound Ti/sub 3/Sn (from 0 to 25 at.% Sn). Analyses of the thermograms showed that all conversions proceeding with the absorption of heat could be detected on the heating curves. Tin lowers the temperature of conversion of titunium with 5.0 at.% tin first to a minimum at 860 tained C which then increases to 890 tained C at higher tin contents. A peritectoid reaction ( alpha / submore » 2/ were ob ore resistant t + ) takes place with a conversion temperature at 890 tained C. A HF-HNO/sub 3/-glycerin etch showed a single-phase homogeneous structure of an alpha -solid solution with alloys containing up to 9 at.% Q. The amount of a second -phase increases with increasing tin content until a single-phase structure of a -solid solution of the compound Ti/sub 3/Sn is noted with alloys containing 23 to 25 at.% Sn. Alloys containing 8 to 22.5 at.% Sn undergo a peritectoid reaction, at a temperature of 890 tained C as shown by thermal analyses and by microstructural analyses of samples quenched frorn above and below the conversion temperature. A study of the microstructure of quenched alloys showed that the solubility of tin in ore resistant t -titanium increases from 8 at.% Sn at 890 tained C to 10.5 at.% Sn at 1100 tained C. X-ray analyses of annealed samples of alloy showed only the lines of an alpha solid solution for 5, 8, 9 at.% Sn, a -solid solution for 23 at.% Sn (close to the composition Ti/sub 3/Sn), and an alpha and mixed phase for a 15 at.% Sn. Vickers hardness numbers were determined with a diamond pyramid at a loading of 10 kg. The hardness increases smoothly with increasing tin content to a maximum at the saturation solubility of the tin in the alpha - or ore resistant t -solid solution. The hardness decreases smoothly with the appearance of the -phase until it attains a minimum at the composition of the compound Ti/sub 3/Sn. The specific electric resistance increases with an increase of tin in the solid solution of alpha -titanium. The rate of increase of the specific electric resistance decreases markedly with the appearance of the -phase. The electric resistance of an alloy with 14.3 at.% Sn was studied as a function of temperature from room temperature to 1100 tained C in special vacuum equipment. A sharp drop in electric resistance a; 890 tained C confirmed the existence of a peritectoid reaction in the system Ti-Sn. (TTT)« less

One year analysis of time-lapse electrical data on a clayey landslide: identification of elementary hydrological processes

NASA Astrophysics Data System (ADS)

Gance, Julien; Sailhac, Pascal; Malet, Jean-Philippe; Supper, Robert; Jochum, Birgit; Ottowittz, David; Grandjean, Gilles

2014-05-01

Water infiltration, evaporation and runoff are responsible of changes in the topsoil water content and can influence slope stability which is very often the main controlling factor of landslide triggering. In this work, time-lapse monitoring of electrical conductivity is used to observe variations in soil water contents. Based on recent work which demonstrated the possibility of monitoring the hydrological response of a clayey slope to controlled rainfall experiments, we installed an electrical monitoring system at the Super-Sauze landslide for long-term observation. We used the GEOMON4D resistivimeter (developed by the Austrian Geological Surve) and specifically designed for experiments needing high rate of data acquisition, records of full signal samples for noise detection, remote controlled management and automatic data transfer. The electrode positions varying with time, we installed two cameras to control the position of the electrodes. Several hydrological sensors were also installed along the profile to measure soil temperature, groundwater temperature, groundwater level, groundwater conductivity and soil humidity. The challenge is the processing of 4.2 million of electrical resistivity data. In this difficult context, the possible factors controlling changes in resistivity values are the movement of the electrodes, the soil and water temperature, the change of porosity due to compaction and the soil degree of saturation. Therefore, before any inversion, the presence of possible 3D effects, and the measurement accuracy and uncertainty are assessed. A threshold in apparent resistivity change that could correspond to a change in soil saturation is determined. From those results, we investigate variations in the apparent resistivity. Responses to different hydrological processes (soil freezing/thawing, snow-melting, intense rainfall) occurring during the period of study are detected on resistivity values inversed on short periods.

Revival of ferromagnetic behavior in charge-ordered Pr0.75Na0.25MnO3 manganite by ruthenium doping at Mn site and its MR effect

NASA Astrophysics Data System (ADS)

Elyana, E.; Mohamed, Z.; Kamil, S. A.; Supardan, S. N.; Chen, S. K.; Yahya, A. K.

2018-02-01

Ru doping in charge-ordered Pr0.75Na0.25Mn1-xRuxO3 (x = 0-0.1) manganites was studied to investigate its effect on structure, electrical transport, magnetic properties, and magnetotransport properties. DC electrical resistivity (ρ), magnetic susceptibility, and χ' measurements showed that sample x = 0 exhibits insulating behavior within the entire temperature range and antiferromagnetic (AFM) behavior below the charge-ordering (CO) transition temperature TCO of 221 K. Ru4+ substitution (x>0.01) suppressed the CO state, which resulted in the revival of paramagnetic to ferromagnetic (FM) transition at the Curie temperature Tc, increasing from 120 K (x = 0.01) to 193 K (x = 0.1). Deviation from the Curie-Weiss law above Tc in the 1/χ' versus T plot for x = 0.01 doped samples indicated the existence of Griffiths phase with Griffith temperature at 169 K. Electrical resistivity measurements showed that Ru4+ substitution increased the metallic-to-insulating transition temperature TMI from 144 K (x = 0.01) to 192 K (x = 0.05) due to enhanced double-exchange mechanism, but TMI decreased to 176 K (x = 0.1) probably due to the existence of AFM clusters within the FM domain. The present work also discussed the possible theoretical models at the resistivity curve of Pr0.75Na0.25Mn1-xRuxO3 (x = 0-0.1) for the entire temperature range.

Effect of rare-earth doping on the thermoelectric and electrical transport properties of the transition metal pentatelluride hafnium pentatelluride

NASA Astrophysics Data System (ADS)

Lowhorn, Nathan Dane

The transition metal pentatellurides HfTe5 and ZrTe5 have been observed to possess interesting electrical transport properties. High thermopower and low resistivity values result in high thermoelectric power factors. In addition, they possess anomalous transport behavior. The temperature dependence of the resistivity is semimetallic except for a large resistive peak as a function of temperature at around 75 K for HfTe5 and 145 K for ZrTe5. At a temperature corresponding to this peak, the thermopower crosses zero as it moves from large positive values to large negative values. This behavior has been found to be extremely sensitive to changes in the energetics of the system through influences such as magnetic field, stress, pressure, microwave radiation, and substitutional doping. This behavior has yet to be fully explained. Previous doping studies have shown profound and varied effects on the anomalous transport behavior. In this study we investigate the effect on the electrical resistivity, thermopower, and magnetoresistance of doping HfTe5 with rare-earth elements. We have grown single crystals of nominal Hf0.75RE 0.25Te5 where RE = Ce, Pr, Nd, Sm, Gd, Tb, Dy, and Ho. Electrical resistivity and thermopower data from about 10 K to room temperature are presented and discussed in terms of the thermoelectric properties. Doping with rare-earth elements of increasing atomic number leads to a systematic suppression of the anomalous transport behavior. Rare-earth doping also leads to an enhancement of the thermoelectric power factor over that of previously studied pentatellurides and the commonly used thermoelectric material Bi2Te3. For nominal Hf0.75Nd0.25Te5 and Hf0.75 Sm0.25Te5, values more than a factor of 2 larger than that Bi2Te3 are observed. In addition, suppression of the anomalous transport behavior leads to a suppression of the large magnetoresistive effect observed in the parent compounds. Rare-earth doping of HfTe5 has a profound impact on the anomalous electrical transport properties of the parent pentatellurides and produces enhanced thermoelectric properties.

Anomalous electron transport in metal/carbon multijunction devices by engineering of the carbon thickness and selecting metal layer

NASA Astrophysics Data System (ADS)

Dwivedi, Neeraj; Dhand, Chetna; Rawal, Ishpal; Kumar, Sushil; Malik, Hitendra K.; Lakshminarayanan, Rajamani

2017-06-01

A longstanding concern in the research of amorphous carbon films is their poor electrical conductivity at room temperature which constitutes a major barrier for the development of cost effective electronic and optoelectronic devices. Here, we propose metal/carbon hybrid multijunction devices as a promising facile way to overcome room temperature electron transport issues in amorphous carbon films. By the tuning of carbon thickness and swapping metal layers, we observe giant (upto ˜7 orders) reduction of electrical resistance in metal/carbon multijunction devices with respect to monolithic amorphous carbon device. We engineer the maximum current (electrical resistance) from about 10-7 to 10-3 A (˜107 to 103 Ω) in metal (Cu or Ti)/carbon hybrid multijunction devices with a total number of 10 junctions. The introduction of thin metal layers breaks the continuity of relatively higher resistance carbon layer as well as promotes the nanostructuring of carbon. These contribute to low electrical resistance of metal/carbon hybrid multijunction devices, with respect to monolithic carbon device, which is further reduced by decreasing the thickness of carbon layers. We also propose and discuss equivalent circuit model to explain electrical resistance in monolithic carbon and metal/carbon multijunction devices. Cu/carbon multijunction devices display relatively better electrical transport than Ti/carbon devices owing to low affinity of Cu with carbon that restricts carbide formation. We also observe that in metal/carbon multijunction devices, the transport mechanism changes from Poole-Frenkel/Schottky model to the hopping model with a decrease in carbon thickness. Our approach opens a new route to develop carbon-based inexpensive electronic and optoelectronic devices.

Temperature Dependent Electrical Transport Properties of Ni-Cr and Co-Cr Binary Alloys

NASA Astrophysics Data System (ADS)

Thakore, B. Y.; Suthar, P. H.; Khambholja, S. G.; Gajjar, P. N.; Bhatt, N. K.; Jani, A. R.

2011-12-01

The temperature dependent electrical transport properties viz. electrical resistivity and thermal conductivity of Ni10Cr90 and Co20Cr80 alloys are computed at various temperatures. The electrical resistivity has been calculated according to Faber-Ziman model combined with Ashcroft-Langreth partial structure factors. In the present work, to include the ion-electron interaction, we have used a well tested local model potential. For exchange-correlation effects, five different forms of local field correction functions due to Hartree (H), Taylor (T), Ichimaru and Utsumi (IU), Farid et al (F) and Sarkar et al (S) are used. The present results due to S function are in good agreement with the experimental data as compared to results obtained using other four functions. The S functions satisfy compressibility sum rule in long wave length limit more accurately as compared to T, IU and F functions, which may be responsible for better agreement of results, obtained using S function. Also, present result confirms the validity of present approach in determining the transport properties of alloys like Ni-Cr and Co-Cr.

In situ synchrotron study of electromigration induced grain rotations in Sn solder joints

NASA Astrophysics Data System (ADS)

Shen, Hao; Zhu, Wenxin; Li, Yao; Tamura, Nobumichi; Chen, Kai

2016-04-01

Here we report an in situ study of the early stage of microstructure evolution induced by electromigration in a Pb-free β-Sn based solder joint by synchrotron polychromatic X-ray microdiffraction. With this technique, crystal orientation evolution is monitored at intragranular levels with high spatial and angular resolution. During the entire experiment, no crystal growth is detected, and rigid grain rotation is observed only in the two grains within the current crowding region, where high density and divergence of electric current occur. Theoretical calculation indicates that the trend of electrical resistance drop still holds under the present conditions in the grain with high electrical resistivity, while the other grain with low resistivity reorients to align its a-axis more parallel with the ones of its neighboring grains. A detailed study of dislocation densities and subgrain boundaries suggests that grain rotation in β-Sn, unlike grain rotation in high melting temperature metals which undergo displacive deformation, is accomplished via diffusional process mainly, due to the high homologous temperature.

Corrosion-protective coatings from electrically conducting polymers

NASA Technical Reports Server (NTRS)

Thompson, Karen Gebert; Bryan, Coleman J.; Benicewicz, Brian C.; Wrobleski, Debra A.

1991-01-01

In a joint effort between NASA Kennedy and LANL, electrically conductive polymer coatings were developed as corrosion protective coatings for metal surfaces. At NASA Kennedy, the launch environment consist of marine, severe solar, and intermittent high acid and/or elevated temperature conditions. Electrically conductive polymer coatings were developed which impart corrosion resistance to mild steel when exposed to saline and acidic environments. Such coatings also seem to promote corrosion resistance in areas of mild steel where scratches exist in the protective coating. Such coatings appear promising for many commercial applications.

High pressure study of Pu(0.92)Am(0.08) binary alloy.

PubMed

Klosek, V; Griveau, J C; Faure, P; Genestier, C; Baclet, N; Wastin, F

2008-07-09

The phase transitions (by means of x-ray diffraction) and electrical resistivity of a Pu(0.92)Am(0.08) binary alloy were determined under pressure (up to 2 GPa). The evolution of atomic volume with pressure gives detailed information concerning the degree of localization of 5f electronic states and their delocalization process. A quasi-linear V = f(P) dependence reflects subtle modifications of the electronic structure when P increases. The electrical resistivity measurements reveal the very high stability of the δ phase for pressures less than 0.7 GPa, since no martensitic-like transformation occurs at low temperature. Remarkable electronic behaviours have also been observed. Finally, resistivity curves have shown the temperature dependence of the phase transformations together with unexpected kinetic effects.

Resistance switching mechanism of La0.8Sr0.2MnO3-δ thin films

NASA Astrophysics Data System (ADS)

Luo, X. D.; Gao, R. L.; Fu, C. L.; Cai, W.; Chen, G.; Deng, X. L.; Zhang, H. R.; Sun, J. R.

2016-02-01

Effects of oxygen vacancies on the electrical transport properties of oxygen stoichiometric La0.8Sr0.2MnO3 and oxygen-deficient La0.8Sr0.2MnO3-δ films have been investigated. The result presents that the oxygen-deficient films annealed in vacuum show obvious increase of resistance and lattice parameter. With the sweeping voltage or temperature increasing, the resistance exhibits obvious bipolar switching effect, no forming process was needed. Oxygen deficiency in the annealed film leads to the formation of a structural disorder in the Mn-O-Mn conduction channel due to the accumulation of oxygen vacancies under high external electric field or temperatures and hence is believed to be responsible for the bipolar resistance switching effect and the enhanced resistivity compared with oxygen stoichiometric La0.8Sr0.2MnO3 film. These results may be important for practical applications in photoelectric or storage devices and point to a useful direction for other oxidizing materials.

Method for the thermal characterization, visualization, and integrity evaluation of conducting material samples or complex structures

DOEpatents

Ortiz, Marcos G.

1992-01-01

A method for modeling a conducting material sample or structure (herein called a system) as at least two regions which comprise an electrical network of resistances, for measuring electric resistance between at least two selected pairs of external leads attached to the surface of the system, wherein at least one external lead is attached to the surface of each of the regions, and, using basic circuit theory, for translating measured resistances into temperatures or thermophysical properties in corresponding regions of the system.

Method for the thermal characterization, visualization, and integrity evaluation of conducting material samples or complex structures

DOEpatents

Ortiz, M.G.

1992-11-24

Disclosed is a method for modeling a conducting material sample or structure (herein called a system) as at least two regions which comprise an electrical network of resistances, for measuring electric resistance between at least two selected pairs of external leads attached to the surface of the system, wherein at least one external lead is attached to the surface of each of the regions, and, using basic circuit theory, for translating measured resistances into temperatures or thermophysical properties in corresponding regions of the system. 16 figs.

Thermal stability of Pt-Ti bilayer films annealing in vacuum and ambient atmosphere

NASA Astrophysics Data System (ADS)

Weng, Sizhe; Qiao, Li; Wang, Peng

2018-06-01

The thermal stability of platinum/titanium bilayer film dominates the performance when the film electrodes operate under extreme conditions, such as high temperature. In this study, a platinum/titanium bilayer film deposited by magnetron sputtering was used as a model system to study the influence of annealing in vacuum and ambient atmosphere on structural and electrical resistivity changes. The results show that in both cases blow 773 K annealing the metal platinum is the dominant phase, the alloying and the diffusion happen only at the interface of Pt and Ti. Two different structural evolutions set in when the temperature above 873 K, in vacuum an alloying process promotes with increasing of annealing temperature and metal Pt phase transforms to TiPt8 and finally to TiPt3 compounds, which leads to the increase of electrical resistivity. In ambient atmosphere annealing, when titanium diffused out to the surface of film, the oxidation reaction between titanium and oxygen suppresses the alloying process between platinum and titanium, in this case the metal Pt phase remains in the film and starts to agglomerate, defects such as grain boundary and voids in film reduced due to the recrystallization, results in the reduction of electrical resistivity.

Low temperature thermal conductivity of alloys used in cryogenic coaxial cables

NASA Astrophysics Data System (ADS)

Kushino, Akihiro; Kasai, Soichi

2014-03-01

We have developed thin seamless coaxial cables applied for readout in low temperature experiments below liquid helium temperature. Stainless steel employed as the center and outer electrical conductors of the coaxial cable has adequately low thermal conductivity compared to pure metals and can be used when heat penetration into low temperature stages through cables should be lowered however it has large electrical resistivity which can disturb sensitive measurements. Superconducting NbTi alloy has good performance with rather low thermal conductivity and high electrical conductivity. Meanwhile coaxial cables using normal conducting copper alloys such as cupro-nickel, brass, beryllium-copper, phosphor-bronze are advantageous with their good electrical, thermal and cost performances. We investigated thermal conductivity of such alloys after the drawing process into coaxial cables, and compared to expected values without drawing.

A systematic study on the effect of electron beam irradiation on structural, electrical, thermo-electric power and magnetic property of LaCoO3

NASA Astrophysics Data System (ADS)

Benedict, Christopher J.; Rao, Ashok; Sanjeev, Ganesh; Okram, G. S.; Babu, P. D.

2016-01-01

In this communication, the effect of electron beam irradiation on the structural, electrical, thermo-electric power and magnetic properties of LaCoO3 cobaltites have been investigated. Rietveld refinement of XRD data reveals that all samples are single phased with rhombohedral structure. Increase in electrical resistivity data is observed with increase in dosage of electron beam irradiation. Analysis of the measured electrical resistivity data indicates that the small polaron hopping model is operative in the high temperature regime for all samples. The Seebeck coefficient (S) of the pristine and the irradiated samples exhibits a crossover from positive to negative values, and a colossal value of Seebeck coefficient (32.65 mV/K) is obtained for pristine sample, however, the value of S decreases with increase in dosage of irradiation. The analysis of Seebeck coefficient data confirms that the small polaron hopping model is operative in the high temperature region. The magnetization results give clear evidence of increase in effective magnetic moment due to increase in dosage of electron beam irradiation.

Effects Of Moisture On Zinc Orthotitanate Paint

NASA Technical Reports Server (NTRS)

Mon, Gordon R.; Gonzalez, Charles C.; Ross, JR., Ronald g.; Wen, Liang C.; O'Donnell, Timothy

1991-01-01

Report presents results of tests of electrical conductivity and resistance to corrosion of zinc orthotitanate (ZOT) paint. Measured effects of temperature, humidity, and vacuum on ceramic paint. Used as temperature-control coating designed to have low and stable ratio of absorptance to emittance for heat radiation. Helps to prevent buildup of static electric charge and helps to protect electronic circuitry from potentially damaging static discharges.

Electrical and optical percolations in PMMA/GNP composite films

NASA Astrophysics Data System (ADS)

Arda, Ertan; Mergen, Ömer Bahadır; Pekcan, Önder

2018-05-01

Effects of graphene nanoplatelet (GNP) addition on the electrical conductivity and optical absorbance of poly(methyl methacrylate)/graphene nanoplatelet (PMMA/GNP) composite films were studied. Optical absorbance and two point probe resistivity techniques were used to determine the variations of the optical and electrical properties of the composites, respectively. Absorbance intensity, A, and surface resistivity, Rs, of the composite films were monitored as a function of GNP mass fraction (M) at room temperature. Absorbance intensity values of the composites were increased and surface resistivity values were decreased by increasing the content of GNP in the composite. Electrical and optical percolation thresholds of composite films were determined as Mσ = 27.5 wt.% and Mop = 26.6 wt.%, respectively. The conductivity and the optical results were attributed to the classical and site percolation theories, respectively. Optical (βop) and electrical (βσ) critical exponents were calculated as 0.40 and 1.71, respectively.

Induction heaters used to heat subsurface formations

DOEpatents

Nguyen, Scott Vinh [Houston, TX; Bass, Ronald M [Houston, TX

2012-04-24

A heating system for a subsurface formation includes an elongated electrical conductor located in the subsurface formation. The electrical conductor extends between at least a first electrical contact and a second electrical contact. A ferromagnetic conductor at least partially surrounds and at least partially extends lengthwise around the electrical conductor. The electrical conductor, when energized with time-varying electrical current, induces sufficient electrical current flow in the ferromagnetic conductor such that the ferromagnetic conductor resistively heats to a temperature of at least about 300.degree. C.

Correlation of Critical Temperatures and Electrical Properties in Titanium Films

NASA Astrophysics Data System (ADS)

Gandini, C.; Lacquaniti, V.; Monticone, E.; Portesi, C.; Rajteri, M.; Rastello, M. L.; Pasca, E.; Ventura, G.

Recently transition-edge sensors (TES) have obtained an increasing interest as light detectors due to their high energy resolution and broadband response. Titanium (Ti), with transition temperature up to 0.5 K, is among the suitable materials for TES application. In this work we investigate Ti films obtained from two materials of different purity deposited by e-gun on silicon nitride. Films with different thickness and deposition substrate temperature have been measured. Critical temperatures, electrical resistivities and structural properties obtained from x-ray are related to each other.

Mechanical and electrical properties of low temperature phase MnBi

DOE PAGES

Jiang, Xiujuan; Roosendaal, Timothy; Lu, Xiaochuan; ...

2016-01-21

The low temperature phase (LTP) MnBi is a promising rare-earth-free permanent magnet material due to its high intrinsic coercivity and its large positive temperature coefficient. While scientists are making progress on fabricating bulk MnBi magnets, engineers have started to consider MnBi magnet for motor applications. In addition to the magnetic properties, there are other physical properties that could significantly affect a motor design. Here, we report the results of our investigation on the mechanical and electrical properties of bulk LTP MnBi and their dependence on temperature. We found at room temperature the sintered MnBi magnet fractures when the compression stressmore » exceeds 193 MPa; and its room temperature electric resistance is about 6.85 μΩ-m.« less

Deposition of Electrically Conductive Coatings on Castable Polyurethane Elastomers by the Flame Spraying Process

NASA Astrophysics Data System (ADS)

Ashrafizadeh, H.; McDonald, A.; Mertiny, P.

2016-02-01

Deposition of metallic coatings on elastomeric polymers is a challenging task due to the heat sensitivity and soft nature of these materials and the high temperatures in thermal spraying processes. In this study, a flame spraying process was employed to deposit conductive coatings of aluminum-12silicon on polyurethane elastomers. The effect of process parameters, i.e., stand-off distance and air added to the flame spray torch, on temperature distribution and corresponding effects on coating characteristics, including electrical resistivity, were investigated. An analytical model based on a Green's function approach was employed to determine the temperature distribution within the substrate. It was found that the coating porosity and electrical resistance decreased by increasing the pressure of the air injected into the flame spray torch during deposition. The latter also allowed for a reduction of the stand-off distance of the flame spray torch. Dynamic mechanical analysis was performed to investigate the effect of the increase in temperature within the substrate on its dynamic mechanical properties. It was found that the spraying process did not significantly change the storage modulus of the polyurethane substrate material.

Subsurface Ice Detection via Low Frequency Surface Electromagnetic Method

NASA Astrophysics Data System (ADS)

Stillman, D. E.; Grimm, R. E.; Mcginnis, R. N.

2014-12-01

The geophysical detection of ice in the Cryosphere is typically conducted by measuring the absence of water. These interpretations can become non-unique in dry soils or in clay- and silt-rich soils that contain significant quantities of unfrozen water. Extensive laboratory measurements of electrical properties were made on permafrost samples as a function of frequency, temperature, and water content. These laboratory measurements show that the amount of ice can be uniquely obtained by measuring a frequency dependence of the electrical properties over a large frequency range (20 kHz - 10 Hz). In addition, the electrical properties of permafrost are temperature dependent, which can allow for an estimate of subsurface temperature. In order to test this approach in the field, we performed field surveys at four locations in Alaska. We used three low frequency electromagnetic methods: Spectral Induced Polarization (SIP: 20 kHz - 10 Hz), Capacively Coupled Resistivity (CCR: OhmMapper - 16.5 kHz), and DC Resistivity (Syscal ~ 8 Hz). At the Cold Regions Research and Engineering Laboratory permafrost tunnel near Fox, AK, we used SIP to measure the average ice concentration of 80 v% and determined the temperature to be -3±1°C by matching survey results to lab data. SIP data acquisition is very slow; therefore, at three sites near Tok, AK, we used CCR to perform reconnaissance of the area. Then SIP and DC resistivity were performed at anomalous areas. The three survey types give very similar absolute resistivity values. We found that while SIP gives the most quantitative results, the frequency dependence from the CCR and DC resistivity surveys is all that are needed to determine ice content in permafrost.

Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

PubMed Central

Suga, Hiroshi; Suzuki, Hiroya; Shinomura, Yuma; Kashiwabara, Shota; Tsukagoshi, Kazuhito; Shimizu, Tetsuo; Naitoh, Yasuhisa

2016-01-01

Highly stable, nonvolatile, high-temperature memory based on resistance switching was realized using a polycrystalline platinum (Pt) nanogap. The operating temperature of the memory can be drastically increased by the presence of a sharp-edged Pt crystal facet in the nanogap. A short distance between the facet edges maintains the nanogap shape at high temperature, and the sharp shape of the nanogap densifies the electric field to maintain a stable current flow due to field migration. Even at 873 K, which is a significantly higher temperature than feasible for conventional semiconductor memory, the nonvolatility of the proposed memory allows stable ON and OFF currents, with fluctuations of less than or equal to 10%, to be maintained for longer than eight hours. An advantage of this nanogap scheme for high-temperature memory is its secure operation achieved through the assembly and disassembly of a Pt needle in a high electric field. PMID:27725705

An alternative methodology for the analysis of electrical resistivity data from a soil gas study

NASA Astrophysics Data System (ADS)

Johansson, Sara; Rosqvist, Hâkan; Svensson, Mats; Dahlin, Torleif; Leroux, Virginie

2011-08-01

The aim of this paper is to present an alternative method for the analysis of resistivity data. The methodology was developed during a study to evaluate if electrical resistivity can be used as a tool for analysing subsurface gas dynamics and gas emissions from landfills. The main assumption of this study was that variations in time of resistivity data correspond to variations in the relative amount of gas and water in the soil pores. Field measurements of electrical resistivity, static chamber gas flux and weather data were collected at a landfill in Helsingborg, Sweden. The resistivity survey arrangement consisted of nine lines each with 21 electrodes in an investigation area of 16 ×20 m. The ABEM Lund Imaging System provided vertical and horizontal resistivity profiles every second hour. The data were inverted in Res3Dinv using L1-norm-based optimization method with a standard least-squares formulation. Each horizontal soil layer was then represented as a linear interpolated raster model. Different areas underneath the gas flux measurement points were defined in the resistivity model of the uppermost soil layer, and the vertical extension of the zones could be followed at greater depths in deeper layer models. The average resistivity values of the defined areas were calculated and plotted on a time axis, to provide graphs of the variation in resistivity with time in a specific section of the ground. Residual variation of resistivity was calculated by subtracting the resistivity variations caused by the diurnal temperature variations from the measured resistivity data. The resulting residual resistivity graphs were compared with field data of soil moisture, precipitation, soil temperature and methane flux. The results of the study were qualitative, but promising indications of relationships between electrical resistivity and variations in the relative amount of gas and water in the soil pores were found. Even though more research and better data quality is necessary for verification of the results presented here, we conclude that this alternative methodology of working with resistivity data seems to be a valuable and flexible tool for this application.

Passive, Highly-Sensitive, Room-Temperature Magnetic Field Sensors and Arrays for Detection and Imaging of Hidden Threats in Urban Environments

DTIC Science & Technology

2012-07-01

units made from the various sensors. This was because the different types of ME laminates have different electrical properties ( resistance and...DC resistance of a sensor (Rdc) 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT: SAR 18. NUMBER OF PAGES 338 19a. NAME OF...3.3.6. Electric -field tuning effect ..................................................................70 A.3.4. Dielectric loss noise reduction

Lithium battery management system

DOEpatents

Dougherty, Thomas J [Waukesha, WI

2012-05-08

Provided is a system for managing a lithium battery system having a plurality of cells. The battery system comprises a variable-resistance element electrically connected to a cell and located proximate a portion of the cell; and a device for determining, utilizing the variable-resistance element, whether the temperature of the cell has exceeded a predetermined threshold. A method of managing the temperature of a lithium battery system is also included.

Method of Heating a Foam-Based Catalyst Bed

NASA Technical Reports Server (NTRS)

Fortini, Arthur J.; Williams, Brian E.; McNeal, Shawn R.

2009-01-01

A method of heating a foam-based catalyst bed has been developed using silicon carbide as the catalyst support due to its readily accessible, high surface area that is oxidation-resistant and is electrically conductive. The foam support may be resistively heated by passing an electric current through it. This allows the catalyst bed to be heated directly, requiring less power to reach the desired temperature more quickly. Designed for heterogeneous catalysis, the method can be used by the petrochemical, chemical processing, and power-generating industries, as well as automotive catalytic converters. Catalyst beds must be heated to a light-off temperature before they catalyze the desired reactions. This typically is done by heating the assembly that contains the catalyst bed, which results in much of the power being wasted and/or lost to the surrounding environment. The catalyst bed is heated indirectly, thus requiring excessive power. With the electrically heated catalyst bed, virtually all of the power is used to heat the support, and only a small fraction is lost to the surroundings. Although the light-off temperature of most catalysts is only a few hundred degrees Celsius, the electrically heated foam is able to achieve temperatures of 1,200 C. Lower temperatures are achievable by supplying less electrical power to the foam. Furthermore, because of the foam s open-cell structure, the catalyst can be applied either directly to the foam ligaments or in the form of a catalyst- containing washcoat. This innovation would be very useful for heterogeneous catalysis where elevated temperatures are needed to drive the reaction.

Elevated temperature strain gages

NASA Technical Reports Server (NTRS)

Brittain, J. O.; Geslin, D.; Lei, J. F.

1986-01-01

One of the goals of the HOST Program is the development of electrical resistance strain gages for static strain measurements at temperatures equal to or greater than 1273 K. Strain gage materials must have a reproducible or predictable response to temperature, time and strain. It is the objective of this research to investigate criteria for the selection of materials for such applications through electrical properties studies. The results of the investigation of two groups of materials, refractory compounds and binary alloy solid solutions are presented.

Quantifying shallow subsurface water and heat dynamics using coupled hydrological-thermal-geophysical inversion

DOE PAGES

Tran, Anh Phuong; Dafflon, Baptiste; Hubbard, Susan S.; ...

2016-04-25

Improving our ability to estimate the parameters that control water and heat fluxes in the shallow subsurface is particularly important due to their strong control on recharge, evaporation and biogeochemical processes. The objectives of this study are to develop and test a new inversion scheme to simultaneously estimate subsurface hydrological, thermal and petrophysical parameters using hydrological, thermal and electrical resistivity tomography (ERT) data. The inversion scheme-which is based on a nonisothermal, multiphase hydrological model-provides the desired subsurface property estimates in high spatiotemporal resolution. A particularly novel aspect of the inversion scheme is the explicit incorporation of the dependence of themore » subsurface electrical resistivity on both moisture and temperature. The scheme was applied to synthetic case studies, as well as to real datasets that were autonomously collected at a biogeochemical field study site in Rifle, Colorado. At the Rifle site, the coupled hydrological-thermal-geophysical inversion approach well predicted the matric potential, temperature and apparent resistivity with the Nash-Sutcliffe efficiency criterion greater than 0.92. Synthetic studies found that neglecting the subsurface temperature variability, and its effect on the electrical resistivity in the hydrogeophysical inversion, may lead to an incorrect estimation of the hydrological parameters. The approach is expected to be especially useful for the increasing number of studies that are taking advantage of autonomously collected ERT and soil measurements to explore complex terrestrial system dynamics.« less

Investigation of electrical and optical properties of low temperature titanium nitride grown by rf-magnetron sputtering

NASA Astrophysics Data System (ADS)

Sosnin, D.; Kudryashov, D.; Mozharov, A.

2017-11-01

Titanium nitride is a promising material due to its low resistivity, high hardness and chemical inertness. Titanium nitride (TiN) can be applied as an ohmic contact for n-GaN and rectifying contact for p-GaN and also as a part of perovskite solar cell. A technology of TiN low temperature reactive rf-magnetron sputtering has been developed. Electrical and optical properties of titanium nitride were studied as a function of the rf-power and gas mixture composition. Reflectance and transmittance spectra were measured. Cross-section and surface SEM image were obtained. 250 nm thin films of TiN with a resistivity of 23.6 μOm cm were obtained by rf-magnetron sputtering at low temperature.

Modification de l'état d'ordre local d'alliages austénitiques Fe-Cr-Ni au cours de la déformation plastique par traction

NASA Astrophysics Data System (ADS)

Aïdi, B.; Bertrand, C.; Viltange, M.; Dimitrov, O.

1993-09-01

The influence of plastic deformation, by extension at room temperature, on electrical resistivity has been determined in four austenitic Fe-Cr-Ni alloys with 16 wt% Cr and 20, 25, 45 or 75 wt% Ni, in two different states of local order. Two experimental methods have been used (4.2 K resistance measurements before and after deformation, continuous resistance measurements during room-temperature extension tests); the possibilities of the second method and the corrections to be applied are particularly discussed. Resistivity is found to slightly increase at the beginning of deformation ( e < 0.05), then to strongly decrease. The amplitude of the observed effects increases with the nickel content, and with the initial degree of local order. In the high deformation range ( e = 0.15), the resistivity decrease varies linearly with the initial contribution of local order to electrical resistivity. These effects are attributed to a destruction of the local order existing in the solid solutions, by the glide of dislocations during plastic deformation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.

In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O{sub 2} and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity wasmore » measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ∼ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent conducting oxides.« less

UV light induced insulator-metal transition in ultra-thin ZnO/TiOx stacked layer grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Saha, D.; Misra, P.; Joshi, M. P.; Kukreja, L. M.

2016-08-01

In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O2 and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ˜ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent conducting oxides.

High temperature oxidation behavior of interconnect coated with LSCF and LSM for solid oxide fuel cell by screen printing

NASA Astrophysics Data System (ADS)

Lee, Shyong; Chu, Chun-Lin; Tsai, Ming-Jui; Lee, Jye

2010-01-01

The current study examined the effect of La 0.6Sr 0.4Co 0.2Fe 0.8O 3 (LSCF) and La 0.7Sr 0.3MnO 3 (LSM) coatings on the electrical properties and oxidation resistance of Crofer22 APU at 800 °C hot air. LSCF and LSM were coated on Crofer22 APU by screen printing and sintered over temperatures ranging from 1000 to 1100 °C in N 2. The coated alloy was first checked for compositions, morphology and interface conditions and then treated in a simulated oxidizing environment at 800 °C for 200 h. After measuring the long-term electrical resistance, the area specific resistance (ASR) at 800 °C for the alloy coated with LSCF was less than its counterpart coated with LSM. This work used LSCF coating as a metallic interconnect to reduce working temperature for the solid oxide fuel cell.

A sharp knife for high temperatures

NASA Technical Reports Server (NTRS)

Heisman, R. M.; Iceland, W. F.

1978-01-01

Electrically heated nickel-chrome-steel alloy knife may be used to cut heat resistant plastic felt and similar materials with relative ease. Blade made of commercially available alloy RA 330 retains edge at temperatures as high as 927 C.

Effect of gadolinium dopant on structural, magneto-transport, magnetic and thermo-power of Pr0.8Sr0.2MnO3

NASA Astrophysics Data System (ADS)

Poojary, Thrapthi; Babu, P. D.; Sanil, Tejaswini; Daivajna, Mamatha D.

2018-07-01

In the present investigation structural, magneto-transport, magnetic and thermo-power measurements of Gadolinium (Gd) doped Pr0.8-xGdxSr0.2MnO3 (0, 0.2, 0.25 and 0.3) manganites have been done. All the samples are single phased with orthorhombic structure. Temperature variation of resistance exhibits a high temperature transition occurring at 156 K and a low temperature cusp at around 95 K for pristine sample. With Gd doping resistance behavior shows insulating behavior throughout the whole temperature range. Magneto-Resistance (MR%) increases with Gd doping. A huge increase in thermo-electric power is observed with Gd doping.

Enhanced copper micro/nano-particle mixed paste sintered at low temperature for 3D interconnects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Y. Y.; Anantha, P.; Tan, C. S., E-mail: tancs@ntu.edu.sg

2016-06-27

An enhanced copper paste, formulated by copper micro- and nano-particles mixture, is reported to prevent paste cracking and obtain an improved packing density. The particle mixture of two different sizes enables reduction in porosity of the micro-paste and resolves the cracking issue in the nano-paste. In-situ temperature and resistance measurements indicate that the mixed paste has a lower densification temperature. Electrical study also shows a ∼12× lower sheet resistance of 0.27 Ω/sq. In addition, scanning electron microscope image analysis confirms a ∼50% lower porosity, which is consistent with the thermal and electrical results. The 3:1 (micro:nano, wt. %) mixed pastemore » is found to have the strongest synergistic effect. This phenomenon is discussed further. Consequently, the mixed paste is a promising material for potential low temperature 3D interconnects fabrication.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

New inverter-driven ASHPs are gaining ground in colder climates. These systems operate at sub-zero temperatures without the use of electric resistance backup. There are still uncertainties, however, about cold-climate capacity and efficiency in cold weather and questions such as measuring: power consumption, supply, return, and outdoor air temperatures, and air flow through the indoor fan coil. CARB observed a wide range of operating efficiencies and outputs from site to site. Maximum capacities were found to be generally in line with manufacturer's claims as outdoor temperatures fell to -10 degrees F. The reasons for the wide range in heating performance likelymore » include: low indoor air flow rates, poor placement of outdoor units, relatively high return air temperatures, thermostat set back, integration with existing heating systems, and occupants limiting indoor fan speed. Even with lower efficiencies than published in other studies, most of the heat pumps here still provide heat at lower cost than oil, propane, or certainly electric resistance systems.« less

Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperatures

NASA Astrophysics Data System (ADS)

Thiery, N.; Naletov, V. V.; Vila, L.; Marty, A.; Brenac, A.; Jacquot, J.-F.; de Loubens, G.; Viret, M.; Anane, A.; Cros, V.; Ben Youssef, J.; Beaulieu, N.; Demidov, V. E.; Divinskiy, B.; Demokritov, S. O.; Klein, O.

2018-02-01

We report a study on the electrical properties of 19-nm-thick yttrium iron garnet (YIG) films grown by liquid phase epitaxy on gadolinium gallium garnet single crystal. The electrical conductivity and Hall coefficient are measured in the high-temperature range [300,400] K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band gap of Eg≈2 eV. It drops to values about 5 ×103Ω cm at T =400 K, thus indicating that epitaxial YIG ultrathin films behave as large gap semiconductors. We also infer the Hall mobility, which is found to be positive (p type) at 5 cm2V-1sec-1 and almost independent of temperature. We discuss the consequence for nonlocal spin transport experiments performed on YIG at room temperature and demonstrate the existence of electrical offset voltages to be disentangled from pure spin effects.

A model for prediction of the transient rolling resistance of tyres based on inner-liner temperatures

NASA Astrophysics Data System (ADS)

Greiner, Matthias; Unrau, Hans-Joachim; Gauterin, Frank

2018-01-01

Measurements of rolling resistance in thermal equilibrium of a tyre, like measurements according to ISO 28580, do not allow statements about rolling resistances under other driving conditions. Such statements, however, are necessary to determine the energy consumption in driving cycles. Especially for the proper calculation of electric-vehicle remaining ranges and the selection of the respective driving strategies, the real amount of energy consumption is required. This paper presents a model approach, which by means of only one standardised rolling resistance measurement can be parameterised and, considering the present driving speed and tyre temperature, can predict the respective current rolling resistance.

Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Litwin-Staszewska, E.; Suski, T.; Piotrzkowski, R.

Comprehensive studies of the electrical properties of Mg-doped bulk GaN crystals, grown by high-pressure synthesis, were performed as a function of temperature up to 750{degree}C. Annealing of the samples in nitrogen ambient modifies qualitatively their resistivity values {rho} and the {rho}(T) variation. It was found that our material is characterized by a high concentration of oxygen-related donors and that the charge transport in the studied samples is determined by two types of states, one of shallow character (Mg-related state, E{sub A}{approximately}0.15eV), and the second one much more deep, E{sub 2}{approximately}0.95eV (above the valence band). Depending on the effective concentration ofmore » either states, different resistivities {rho} can be observed: lower resistivity ({rho}{lt}10{sup 4}{Omega}cm at ambient temperature) in samples with dominant E{sub A} states and very high resistivity ({rho}{gt}10{sup 6}{Omega}cm at ambient temperature) in samples with dominant E{sub 2} states. For the first type of samples, annealing at T{sub ann}{lt}500{degree}C leads to a decrease of their resistivity and is associated with an increase of the effective concentration of the shallow Mg acceptors. Annealing of both types of samples at temperatures between 600 and 750{degree}C leads to an increase of the deep state concentration. The presence of hydrogen ambient during annealing of the low-resistivity samples strongly influences their properties. The increase of the sample resistivity and an appearance of a local vibrational mode of hydrogen at 3125 cm{minus}1 were observed. These effects can be removed by annealing in hydrogen-free ambient. {copyright} 2001 American Institute of Physics.« less

Power Generation from a Radiative Thermal Source Using a Large-Area Infrared Rectenna

NASA Astrophysics Data System (ADS)

Shank, Joshua; Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew; Howell, Stephen; Peters, David W.; Davids, Paul S.

2018-05-01

Electrical power generation from a moderate-temperature thermal source by means of direct conversion of infrared radiation is important and highly desirable for energy harvesting from waste heat and micropower applications. Here, we demonstrate direct rectified power generation from an unbiased large-area nanoantenna-coupled tunnel diode rectifier called a rectenna. Using a vacuum radiometric measurement technique with irradiation from a temperature-stabilized thermal source, a generated power density of 8 nW /cm2 is observed at a source temperature of 450 °C for the unbiased rectenna across an optimized load resistance. The optimized load resistance for the peak power generation for each temperature coincides with the tunnel diode resistance at zero bias and corresponds to the impedance matching condition for a rectifying antenna. Current-voltage measurements of a thermally illuminated large-area rectenna show current zero crossing shifts into the second quadrant indicating rectification. Photon-assisted tunneling in the unbiased rectenna is modeled as the mechanism for the large short-circuit photocurrents observed where the photon energy serves as an effective bias across the tunnel junction. The measured current and voltage across the load resistor as a function of the thermal source temperature represents direct current electrical power generation.

Pressure-enabled phonon engineering in metals

PubMed Central

Lanzillo, Nicholas A.; Thomas, Jay B.; Watson, Bruce; Washington, Morris; Nayak, Saroj K.

2014-01-01

We present a combined first-principles and experimental study of the electrical resistivity in aluminum and copper samples under pressures up to 2 GPa. The calculations are based on first-principles density functional perturbation theory, whereas the experimental setup uses a solid media piston–cylinder apparatus at room temperature. We find that upon pressurizing each metal, the phonon spectra are blue-shifted and the net electron–phonon interaction is suppressed relative to the unstrained crystal. This reduction in electron–phonon scattering results in a decrease in the electrical resistivity under pressure, which is more pronounced for aluminum than for copper. We show that density functional perturbation theory can be used to accurately predict the pressure response of the electrical resistivity in these metals. This work demonstrates how the phonon spectra in metals can be engineered through pressure to achieve more attractive electrical properties. PMID:24889627

Memory Device and Nanofabrication Techniques Using Electrically Configurable Materials

NASA Astrophysics Data System (ADS)

Ascenso Simões, Bruno

Development of novel nanofabrication techniques and single-walled carbon nanotubes field configurable transistor (SWCNT-FCT) memory devices using electrically configurable materials is presented. A novel lithographic technique, electric lithography (EL), that uses electric field for pattern generation has been demonstrated. It can be used for patterning of biomolecules on a polymer surface and patterning of resist as well. Using electrical resist composed of a polymer having Boc protected amine group and iodonium salt, Boc group on the surface of polymer was modified to free amine by applying an electric field. On the modified surface of the polymer, Streptavidin pattern was fabricated with a sub-micron scale. Also patterning of polymer resin composed of epoxy monomers and diaryl iodonium salt by EL has been demonstrated. Reaction mechanism for electric resist configuration is believed to be induced by an acid generation via electrochemical reduction in the resist. We show a novel field configurable transistor (FCT) based on single-walled carbon nanotube network field-effect transistors in which poly (ethylene glycol) crosslinked by electron-beam is incorporated into the gate. The device conductance can be configured to arbitrary states reversibly and repeatedly by applying external gate voltages. Raman spectroscopy revealed that evolution of the ratio of D- to G-band intensity in the SWCNTs of the FCT progressively increases as the device is configured to lower conductance states. Electron transport studies at low temperatures showed a strong temperature dependence of the resistance. Band gap widening of CNTs up to ˜ 4 eV has been observed by examining the differential conductance-gate voltage-bias voltage relationship. The switching mechanism of the FCT is attributed a structural transformation of CNTs via reversible hydrogenation and dehydrogenations induced by gate voltages, which tunes the CNT bandgap continuously and reversibly to non-volatile analog values. The CNT transistors with field tunable band gaps would facilitate field programmable circuits based on the self-organized CNTs, and might also lead to novel analog memory, neuromorphic, and photonic devices.

A new approach to the internal thermal management of cylindrical battery cells for automotive applications

NASA Astrophysics Data System (ADS)

Worwood, Daniel; Kellner, Quirin; Wojtala, Malgorzata; Widanage, W. D.; M^cGlen, Ryan; Greenwood, David; Marco, James

2017-04-01

Conventional cooling approaches that target either a singular tab or outer surface of common format cylindrical lithium-ion battery cells suffer from a high cell thermal resistance. Under an aggressive duty cycle, this resistance can result in the formation of large in-cell temperature gradients and high hot spot temperatures, which are known to accelerate ageing and further reduce performance. In this paper, a novel approach to internal thermal management of cylindrical battery cells to lower the thermal resistance for heat transport through the inside of the cell is investigated. The effectiveness of the proposed method is analysed for two common cylindrical formats when subject to highly aggressive electrical loading conditions representative of a high performance electric vehicle (EV) and hybrid electric vehicle (HEV). A mathematical model that captures the dominant thermal properties of the cylindrical cell is created and validated using experimental data. Results from the extensive simulation study indicate that the internal cooling strategy can reduce the cell thermal resistance by up to 67.8 ± 1.4% relative to single tab cooling, and can emulate the performance of a more complex pack-level double tab cooling approach whilst targeting cooling at a single tab.

High-temperature geothermal cableheads

NASA Astrophysics Data System (ADS)

Coquat, J. A.; Eifert, R. W.

1981-11-01

Two high temperature, corrosion resistant logging cable heads which use metal seals and a stable fluid to achieve proper electrical terminations and cable sonde interfacings are described. A tensile bar provides a calibrated yield point, and a cone assembly anchors the cable armor to the head. Electrical problems of the sort generally ascribable to the cable sonde interface were absent during demonstration hostile environment loggings in which these cable heads were used.

Monitoring and Control of an Adsorption System Using Electrical Properties of the Adsorbent for Organic Compound Abatement.

PubMed

Hu, Ming-Ming; Emamipour, Hamidreza; Johnsen, David L; Rood, Mark J; Song, Linhua; Zhang, Zailong

2017-07-05

Adsorption systems typically need gas and temperature sensors to monitor their adsorption/regeneration cycles to separate gases from gas streams. Activated carbon fiber cloth (ACFC)-electrothermal swing adsorption (ESA) is an adsorption system that has the potential to be controlled with the electrical properties of the adsorbent and is studied here to monitor and control the adsorption/regeneration cycles without the use of gas and temperature sensors and to predict breakthrough before it occurs. The ACFC's electrical resistance was characterized on the basis of the amount of adsorbed organic gas/vapor and the adsorbent temperature. These relationships were then used to develop control logic to monitor and control ESA cycles on the basis of measured resistance and applied power values. Continuous sets of adsorption and regeneration cycles were performed sequentially entirely on the basis of remote electrical measurements and achieved ≥95% capture efficiency at inlet concentrations of 2000 and 4000 ppm v for isobutane, acetone, and toluene in dry and elevated relative humidity gas streams, demonstrating a novel cyclic ESA system that does not require gas or temperature sensors. This contribution is important because it reduces the cost and simplifies the system, predicts breakthrough before its occurrence, and reduces emissions to the atmosphere.

Temperature dependence of the electrical resistivity of LaxLu1-xAs

NASA Astrophysics Data System (ADS)

Rahimi, S.; Krivoy, E. M.; Lee, J.; Michael, M. E.; Bank, S. R.; Akinwande, D.

2013-08-01

We investigate the temperature-dependent resistivity of single-crystalline films of LaxLu1-xAs over the 5-300 K range. The resistivity was separated into lattice, carrier and impurity scattering regions. The effect of impurity scattering is significant below 20 K, while carrier scattering dominates at 20-80 K and lattice scattering dominates above 80 K. All scattering regions show strong dependence on the La content of the films. While the resistivity of 600 nm LuAs films agree well with the reported bulk resistivity values, 3 nm films possessed significantly higher resistivity, suggesting that interfacial roughness significantly impacts the scattering of carriers at the nanoscale limit.

Method for starting operation of a resistance melter

DOEpatents

Chapman, Christopher Charles

1977-01-01

A method for starting the operation of a resistance furnace, where heating occurs by passing a current through the charge between two furnace electrodes and the charge is a material which is essentially electrically nonconductive when in a solid physical state but which becomes more electrically conductive when in a molten physical state, by connecting electrical resistance heating wire between the furnace electrodes, placing the wire in contact with the charge material between the electrodes and passing a current through the wire to heat the wire to a temperature sufficient to melt the material between the furnace electrodes so that as the material melts, current begins to pass between the electrodes through the melted material, further heating and melting more material until all current between the electrodes passes through the charge material without the aid or presence of the resistance element.

Electrical Transport Properties of Liquid Sn-Sb Binary Alloys

NASA Astrophysics Data System (ADS)

Thakore, B. Y.; Suthar, P. H.; Khambholja, S. G.; Jani, A. R.

2010-06-01

The study of electrical transport properties viz. electrical resistivity, thermo electrical power and thermal conductivity of liquid Sn-Sb binary alloys have been made by our well recognized single parametric model potential. In the present work, screening functions due to Hartree, Taylor, Ichimaru et al.. Farid et al.. and Sarkar et al.. have been employed to incorporate the exchange and correlation effects. The liquid alloy is studied as a function of its composition at temperature 823 K according to the Faber-Ziman model. Further, thermoelectric power and thermal conductivity have been predicted. The values of electrical resistivity of binary alloys computed with Ichimaru et al. and Farid et al.. screening function are in good agreement with the experimental data.

Unique Pressure versus Temperature Phase Diagram for Antiferromagnets Eu2Ni3Ge5 and EuRhSi3

NASA Astrophysics Data System (ADS)

Nakashima, Miho; Amako, Yasushi; Matsubayashi, Kazuyuki; Uwatoko, Yoshiya; Nada, Masato; Sugiyama, Kiyohiro; Hagiwara, Masayuki; Haga, Yoshinori; Takeuchi, Tetsuya; Nakamura, Ai; Akamine, Hiromu; Tomori, Keisuke; Yara, Tomoyuki; Ashitomi, Yosuke; Hedo, Masato; Nakama, Takao; Ōnuki, Yoshichika

2017-03-01

We studied the magnetic properties of the antiferromagnets Eu2Ni3Ge5 and EuRhSi3 by measuring their electrical resistivity, specific heat, magnetic susceptibility, magnetization, and thermoelectric power, together with the electrical resistivities at high pressures of up to 15 GPa. These compounds have almost divalent Eu ions at ambient pressure and order antiferromagnetically with a successive change in the antiferromagnetic structure at TN = 19 K and T'N = 17 K in Eu2Ni3Ge5, and at TN = 49 K and T'N = 45 K in EuRhSi3. Magnetic field versus temperature (H-T) phase diagrams were constructed for both compounds from the magnetization measurements. The Néel temperature in Eu2Ni3Ge5 was found to increase up to 7 GPa but to decrease continuously with further increasing pressure, without the so-called valence transition. Under a high pressure of 15 GPa, Kondo-like behavior of the electrical resistivity was observed, suggesting the existence of the heavy-fermion state at low temperatures. A similar trend is likely to occur in EuRhSi3. The present P-T phase diagrams for both compounds are the first cases that are reminiscent of the phase diagram of EuCu2(SixGe1-x)2.

The Effect of MnO2 Content and Sintering Atmosphere on The Electrical Properties of Iron Titanium Oxide NTC Thermistors using Yarosite

NASA Astrophysics Data System (ADS)

Wiendartun; Gustaman Syarif, Dani

2017-02-01

The effect of MnO2 content and sintering atmosphere on the characteristics of Fe2TiO5 ceramics for Negative Thermal Coefficient (NTC) thermistors by using Fe2O3 derived from yarosite has been studied. The ceramics were produced by pressing a homogeneous mixture of Fe2O3, TiO2 and MnO2 (0-2.0 w/o) powders in appropriate proportions to produce Fe2TiO5 based ceramics and sintering the pressed powder at 1100-1200°C for 3 hours in air, O2 and N2 gas. Electrical characterization was done by measuring electrical resistivity of the sintered ceramics at various temperatures from 30°C to 200°C. Microstructure and structural analyses were also carried out by using an scanning electron microscope (SEM) and x-ray diffraction (XRD). The XRD data showed that the pellets crystallize in orthorhombic. The presence of second phase could not be identified from the XRD analyses. The SEM images showed that the grain size of pellet ceramics increase with increasing of MnO2 addition, and the grains size of the ceramic sintered in oxygen gas is smaller than sintered in nitrogen gas. Electrical data showed that the value of room temperature resistance (RRT) tend to decrease with respect to the increasing of MnO2 addition and the pellet ceramics sintered in oxygen gas had the largest thermistor constant (B), activation energy (Ea), sensitivity (α) and room temperature resistance (RRT), compared to the sintered in nitrogen gas. From the electrical characteristics data, it was known that the electrical characteristics of the Fe2TiO5 pellet ceramics followed the NTC characteristic. The fabricated Fe2TiO5 ceramics have thermistor constants (B = 2207-7145K). This can be applied as temperature sensor, and will fulfill the market requirement.

A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

NASA Technical Reports Server (NTRS)

Liu, S. Q.; Wu, N. J.; Ignatiev, A.

2001-01-01

A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

High hardness and superlative oxidation resistance in a pseudo-icosahehdral Cr-Al binary

NASA Astrophysics Data System (ADS)

Simonson, J. W.; Rosa, R.; Antonacci, A. K.; He, H.; Bender, A. D.; Pabla, J.; Adrip, W.; McNally, D. E.; Zebro, A.; Kamenov, P.; Geschwind, G.; Ghose, S.; Dooryhee, E.; Ibrahim, A.; Aronson, M. C.

Improving the efficiency of fossil fuel plants is a practical option for decreasing carbon dioxide emissions from electrical power generation. Present limits on the operating temperatures of exposed steel components, however, restrict steam temperatures and therefore energy efficiency. Even as a new generation of creep-resistant, high strength steels retain long term structural stability to temperatures as high as ~ 973 K, the low Cr-content of these alloys hinders their oxidation resistance, necessitating the development of new corrosion resistant coatings. We report here the nearly ideal properties of potential coating material Cr55Al229, which exhibits high hardness at room temperature as well as low thermal conductivity and superlative oxidation resistance at 973 K, with an oxidation rate at least three times smaller than those of benchmark materials. These properties originate from a pseudo-icosahedral crystal structure, suggesting new criteria for future research.

Dynamic measurements of thermophysical properties of metals and alloys at high temperatures by subsecond pulse heating techniques

NASA Technical Reports Server (NTRS)

Cezairliyan, Ared

1993-01-01

Rapid (subsecond) heating techniques developed at the National Institute of Standards and Technology for the measurements of selected thermophysical and related properties of metals and alloys at high temperatures (above 1000 C) are described. The techniques are based on rapid resistive self-heating of the specimen from room temperature to the desired high temperature in short times and measuring the relevant experimental quantities, such as electrical current through the specimen, voltage across the specimen, specimen temperature, length, etc., with appropriate time resolution. The first technique, referred to as the millisecond-resolution technique, is for measurements on solid metals and alloys in the temperature range 1000 C to the melting temperature of the specimen. It utilizes a heavy battery bank for the energy source, and the total heating time of the specimen is typically in the range of 100-1000 ms. Data are recorded digitally every 0.5 ms with a full-scale resolution of about one part in 8000. The properties that can be measured with this system are as follows: specific heat, enthalpy, thermal expansion, electrical resistivity, normal spectral emissivity, hemispherical total emissivity, temperature and energy of solid-solid phase transformations, and melting temperature (solidus). The second technique, referred to as the microsecond-resolution technique, is for measurements on liquid metals and alloys in the temperature range 1200 to 6000 C. It utilizes a capacitor bank for the energy source, and the total heating time of the specimen is typically in the range 50-500 micro-s. Data are recorded digitally every 0.5 micro-s with a full-scale resolution of about one part in 4000. The properties that can be measured with this system are: melting temperature (solidus and liquidus), heat of fusion, specific heat, enthalpy, and electrical resistivity. The third technique is for measurements of the surface tension of liquid metals and alloys at their melting temperature. It utilizes a modified millisecond-resolution heating system designed for use in a microgravity environment.

Material variability as measured by low temperature electrical resistivity.

NASA Technical Reports Server (NTRS)

Clark, A. F.; Tryon, P. V.

1972-01-01

Low temperature electrical resistivity was used to determine the material variability (1) between different manufacturers, (2) between different heats from the same manufacturer, and (3) within a given heat for Al 2024, Al-5% Mg alloys, Inconel 718, A286 stainless, and AISI 316. Generally, the coefficient of variation for solution annealed alloys ranged from 1.2 to 14% between manufacturers, 0.8 to 5.1% between heats, and 0.1 to 1.6% within a heat with stainless steels at the low ends and Al 2024 at the high ends. The variability is increased if the material is in a precipitation-hardened condition. A statistical analysis suggests that the variability within a heat is non-normal.

The corrosion behavior of Alloy 52 weld metal in cyclic hydrogenated and oxygenated water chemistry in high temperature aqueous environment

NASA Astrophysics Data System (ADS)

Xu, Jian; Shoji, Tetsuo

2015-06-01

The corrosion behavior of Alloy 52 weld metal in cyclic hydrogenated and oxygenated water chemistry in high temperature water is studied by in situ monitoring corrosion potential (Ecorr), contact electric resistance (CER) and electrochemical impedance measurements (EIS), and ex situ scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analysis. The Ecorr and film resistance show large change when the environment is changed from hydrogenated water to oxygenated water and changeable with changing environment while the morphology and composition only show obvious distinction in the first cycle. The main factor controlling the electric/electrochemical properties of the oxide film is Ecorr.

Room-temperature annealing effects on the basal-plane resistivity of optimally doped YBa2Cu3O7-δ single crystals

NASA Astrophysics Data System (ADS)

Khadzhai, G. Ya.; Vovk, R. V.; Vovk, N. R.; Kamchatnaya, S. N.; Dobrovolskiy, O. V.

2018-02-01

We reveal that the temperature dependence of the basal-plane normal-state electrical resistance of optimally doped YBa2Cu3O7-δ single crystals can be with great accuracy approximated within the framework of the model of s-d electron-phonon scattering. This requires taking into account the fluctuation conductivity whose contribution exponentially increases with decreasing temperature and decreases with an increase of oxygen deficiency. Room-temperature annealing improves the sample and, thus, increases the superconducting transition temperature. The temperature of the 2D-3D crossover decreases during annealing.

Optical and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films

NASA Astrophysics Data System (ADS)

Gao, Y. Q.; Huang, Z. M.; Hou, Y.; Wu, J.; Chu, J. H.

2013-12-01

Mn1.56Co0.96Ni0.48O4 (MCN) films with different layers have been prepared on Al2O3 substrate by chemical solution deposition method. The microstructures, optical and electrical properties of the films are investigated. X-ray diffraction and microstructure analyses show good crystallization and both the crystalline quality and the grain size are improved with the increasing thickness of the films. Mid-infrared optical properties of MCN films have been investigated using transmission spectra. The results show the red shift of absorption with the increasing film thickness and the energy gap Eg decrease from 0.6422 eV to 0.6354 eV. All the MCN films show an exponential decrease in the resistivity with increasing temperature within the measured range. The temperature dependence resistivity can be described by the small polarons hopping model. Using this model, the characteristic temperature T0 and activation energy E of the MCN films were derived. With the film thickness increase, the T0 and E of the MCN films increase. The calculated room temperature coefficient of resistance (TCR) of MCN film with 100 layers is -3.5% K-1. The MCN films showed appropriate resistance and high value of TCR, these advantages make them very preponderant for thermal sensors.

Temperature control during regeneration of activated carbon fiber cloth with resistance-feedback.

PubMed

Johnsen, David L; Rood, Mark J

2012-10-16

Electrothermal swing adsorption (ESA) of organic compounds from gas streams with activated carbon fiber cloth (ACFC) reduces emissions to the atmosphere and recovers feedstock for reuse. Local temperature measurement (e.g., with a thermocouple) is typically used to monitor/control adsorbent regeneration cycles. Remote electrical resistance measurement is evaluated here as an alternative to local temperature measurement. ACFC resistance that was modeled based on its physical properties was within 10.5% of the measured resistance values during electrothermal heating. Resistance control was developed based on this measured relationship and used to control temperature to within 2.3% of regeneration set-point temperatures. Isobutane-laden adsorbent was then heated with resistance control. After 2 min of heating, the temperature of the adsorbent with isobutane was 13% less than the adsorbent without isobutane. This difference decreased to 2.1% after 9 min of heating, showing desorption of isobutane. An ACFC cartridge was also heated to 175 °C for 900 cycles with its resistance and adsorption capacity values remaining within 3% and 2%, respectively. This new method to control regeneration power application based on rapid sensing of the adsorbent's resistance removes the need for direct-contact temperature sensors providing a simple, cost-efficient, and long-term regeneration technique for ESA systems.

Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which itsmore » resistivity is 5.36 × 10{sup 4} Ωcm{sup −1}. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Low-Dielectric Polyimides

NASA Technical Reports Server (NTRS)

St. Clair, Anne K.; St. Clair, Terry L.; Winfree, William P.; Emerson, Bert R., Jr.

1989-01-01

New process developed to produce aromatic condensation polyimide films and coatings having dielectric constants in range of 2.4 to 3.2. Materials better electrical insulators than state-of-the-art commercial polyimides. Several low-dielectric-constant polyimides have excellent resistance to moisture. Useful as film and coating materials for both industrial and aerospace applications where high electrical insulation, resistance to moisture, mechanical strength, and thermal stability required. Applicable to production of high-temperature and moisture-resistance adhesives, films, photoresists, and coatings. Electronic applications include printed-circuit boards, both of composite and flexible-film types and potential use in automotive, aerospace, and electronic industries.

Effects of oxidation and roughness on Cu contact resistance from 4 to 290 K

NASA Technical Reports Server (NTRS)

Nilles, M. J.; Van Sciver, S. W.

1988-01-01

Knowledge of the factors influencing contact resistance is important for optimizing system design in cryogenic applications. In space cryogenics, indirect cooling of infrared components is the primary concern. The presence of bolted joints results in contact resistances which can dominate all other contributions to the overall heat transfer rate. Here, thermal and electrical contact resistances measured between 4 K and 290 K for a series of bolted OFHC Cu contacts are reported. Surface roughness is found to have little effect on the overall contact resistance within the experimental limits, while oxidation can increase the contact resistance by as much as a factor of 100. Thermal and electrical contact resistances measured on the same contact show that the contact resistance temperature dependence does not follow the bulk dependence. For example, the residual resistance ratio (RRR) of the OFHC Cu is 110, but for contacts made from this material, the RRR is about two.

Giant reversible anisotropy changes at room temperature in a (La,Sr)MnO3/Pb(Mg,Nb,Ti)O3 magneto-electric heterostructure.

PubMed

Chopdekar, Rajesh Vilas; Buzzi, Michele; Jenkins, Catherine; Arenholz, Elke; Nolting, Frithjof; Takamura, Yayoi

2016-06-08

In a model artificial multiferroic system consisting of a (011)-oriented ferroelectric Pb(Mg,Nb,Ti)O3 substrate intimately coupled to an epitaxial ferromagnetic (La,Sr)MnO3 film, electric field pulse sequences of less than 6 kV/cm induce large, reversible, and bistable remanent strains. The magnetic anisotropy symmetry reversibly switches from a highly anisotropic two-fold state to a more isotropic one, with concomitant changes in resistivity. Anisotropy changes at the scale of a single ferromagnetic domain were measured using X-ray microscopy, with electric-field dependent magnetic domain reversal showing that the energy barrier for magnetization reversal is drastically lowered. Free energy calculations confirm this barrier lowering by up to 70% due to the anisotropic strain changes generated by the substrate. Thus, we demonstrate that an electric field pulse can be used to 'set' and 'reset' the magnetic anisotropy orientation and resistive state in the film, as well as to lower the magnetization reversal barrier, showing a promising route towards electric-field manipulation of multifunctional nanostructures at room temperature.

A revisit to the temperature dependence of electrical resistivity of α - Titanium at low temperatures

NASA Astrophysics Data System (ADS)

Sharath Chandra, L. S.; Mondal, R.; Thamizhavel, A.; Dhar, S. K.; Roy, S. B.

2017-09-01

The temperature dependence of resistivity ρ(T) of a polycrystalline sample and a single crystal sample (current along the [0001] direction) of α - Titanium (Ti) at low temperatures is revisited to understand the electrical charge transport phenomena in this hexagonal closed pack metal. We show that the ρ(T) in single crystal Ti can be explained by considering the scattering of electrons due to electron-phonon, electron-electron, inter-band s-d and electron-impurity interactions, whereas the ρ(T) of polycrystalline Ti could not be explained by these interactions alone. We observed that the effects of the anisotropy of the hexagonal structure on the electronic band structure and the phonon dispersion need to be taken into account to explain ρ(T) of polycrystalline Ti. Two Debye temperatures corresponding to two different directions for the electron-phonon interactions and inter-band s-d scattering are needed to account the observed ρ(T) in polycrystalline Ti.

Thermal analysis of a multi-layer microchannel heat sink for cooling concentrator photovoltaic (CPV) cells

NASA Astrophysics Data System (ADS)

Siyabi, Idris Al; Shanks, Katie; Mallick, Tapas; Sundaram, Senthilarasu

2017-09-01

Concentrator Photovoltaic (CPV) technology is increasingly being considered as an alternative option for solar electricity generation. However, increasing the light concentration ratio could decrease the system output power due to the increase in the temperature of the cells. The performance of a multi-layer microchannel heat sink configuration was evaluated using numerical analysis. In this analysis, three dimensional incompressible laminar steady flow model was solved numerically. An electrical and thermal solar cell model was coupled for solar cell temperature and efficiency calculations. Thermal resistance, solar cell temperature and pumping power were used for the system efficiency evaluation. An increase in the number of microchannel layers exhibited the best overall performance in terms of the thermal resistance, solar cell temperature uniformity and pressure drop. The channel height and width has no effect on the solar cell maximum temperature. However, increasing channel height leads to a reduction in the pressure drop and hence less fluid pumping power.

Transparent conducting ZnO-CdO thin films deposited by e-beam evaporation technique

NASA Astrophysics Data System (ADS)

Mohamed, H. A.; Ali, H. M.; Mohamed, S. H.; Abd El-Raheem, M. M.

2006-04-01

Thin films of Zn{1-x} Cd{x}O with x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5 at.% were deposited by electron-beam evaporation technique. It has been found that, for as-deposited films, both the transmittance and electrical resistivity decreased with increasing the Cd content. To improve the optical and electrical properties of these films, the effect of annealing temperature and time were taken into consideration for Zn{1-x} Cd{x}O film with x = 0.2. It was found that, the optical transmittance and the electrical conductivity were improved significantly with increasing the time of annealing. At fixed temperature of 300 °C, the transmittance increased with increasing the time of annealing and reached its maximum values of 81% in the visible region and 94% in the NIR region at annealing time of 120 min. The low electrical resistivity of 3.6 × 10-3 Ω cm was achieved at the same conditions. Other parameters named free carrier concentrations, refractive index, extinction coefficient, plasma frequency, and relaxation time were studied as a function of annealing temperature and time for 20% Cd content.

Temperature Dependent Electrical Transport Properties of Ni-Cr and Co-Cr Binary Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thakore, B. Y.; Khambholja, S. G.; Bhatt, N. K.

2011-12-12

The temperature dependent electrical transport properties viz. electrical resistivity and thermal conductivity of Ni{sub 10}Cr{sub 90} and Co{sub 20}Cr{sub 80} alloys are computed at various temperatures. The electrical resistivity has been calculated according to Faber-Ziman model combined with Ashcroft-Langreth partial structure factors. In the present work, to include the ion-electron interaction, we have used a well tested local model potential. For exchange-correlation effects, five different forms of local field correction functions due to Hartree (H), Taylor (T), Ichimaru and Utsumi (IU), Farid et al (F) and Sarkar et al (S) are used. The present results due to S function aremore » in good agreement with the experimental data as compared to results obtained using other four functions. The S functions satisfy compressibility sum rule in long wave length limit more accurately as compared to T, IU and F functions, which may be responsible for better agreement of results, obtained using S function. Also, present result confirms the validity of present approach in determining the transport properties of alloys like Ni-Cr and Co-Cr.« less

Effect of Structural Relaxation on the In-Plane Electrical Resistance of Oxygen-Underdoped ReBaCuO (Re = Y, Ho) Single Crystals

NASA Astrophysics Data System (ADS)

Vovk, Ruslan V.; Vovk, Nikolaj R.; Dobrovolskiy, Oleksandr V.

2014-05-01

The effect of jumpwise temperature variation and room-temperature storing on the basal-plane electrical resistivity of underdoped ReBaCuO (Re = Y, Ho) single crystals is investigated. Reducing the oxygen content has been revealed to lead to the phase segregation accompanied by both, labile component diffusion and structural relaxation in the sample volume. Room-temperature storing of single crystals with different oxygen hypostoichiometries leads to a substantial widening of the rectilinear segment in in conjunction with a narrowing of the temperature range of existence of the pseudogap state. It is established that the excess conductivity obeys an exponential law in a broad temperature range, while the pseudogap's temperature dependence is described satisfactory in the framework of the BCS-BEC crossover theory. Substituting yttrium with holmium essentially effects the charge distribution and the effective interaction in CuO planes, thereby stimulating disordering processes in the oxygen subsystem. This is accompanied by a notable shift of the temperature zones corresponding to transitions of the metal-insulator type and to the regime of manifestation of the pseudogap anomaly.

The effect of sintering temperature on electrical characteristics of Fe2TiO5/Nb2O5 ceramics for NTC thermistor

NASA Astrophysics Data System (ADS)

Wiendartun, Risdiana, Fitrilawati, Siregar, R. E.

2016-02-01

A study on the fabrication of Iron Titanium Oxide (Fe2TiO5) ceramics for negative temperature coefficient (NTC) thermistors has been carried out, in order to know the effect of sintering temperature on the electrical characteristic of 1.0 % mole Nb2O5 doped Fe2TiO5 ceramics.These ceramics were made by mixing commercial powders of Fe2O3, TiO2 and Nb2O5 with proportional composition to produce Fe2TiO5 based ceramic. The raw pellet was sintered at 1000 °C, 1100 °C and 1200 °C temperature for 2 hours in air. Analysis of the microstructure and crystal structure were performed by using a scanning electron microscope (SEM) and x-ray diffraction (XRD) respectively. XRD spectra showed that the crystal structure of all ceramics of Fe2TiO5 made at various sintering temperatures are orthorhombic. The SEM images showed that the grain size of pellet ceramics increase with increasing sintering temperatures. From electrical resistances data that was measured at temperature 30-300 °C, it is found that the value of thermistor constant (B), activation energy (Ea), thermistor sensitivity (α) and room temperature resistance (RRT) decreases with respect to the increasing of sintering temperature. The fabricated Fe2TiO5 ceramics have thermistor constants (B = 6394-6959 K). This can be applied as temperature sensor, and will fulfill the market requirement.

Temperature differential detection device

DOEpatents

Girling, P.M.

1986-04-22

A temperature differential detection device for detecting the temperature differential between predetermined portions of a container wall is disclosed as comprising a Wheatstone bridge circuit for detecting resistance imbalance with a first circuit branch having a first elongated wire element mounted in thermal contact with a predetermined portion of the container wall, a second circuit branch having a second elongated wire element mounted in thermal contact with a second predetermined portion of a container wall with the wire elements having a predetermined temperature-resistant coefficient, an indicator interconnected between the first and second branches remote from the container wall for detecting and indicating resistance imbalance between the first and second wire elements, and connector leads for electrically connecting the wire elements to the remote indicator in order to maintain the respective resistance value relationship between the first and second wire elements. The indicator is calibrated to indicate the detected resistance imbalance in terms of a temperature differential between the first and second wall portions. 2 figs.

Temperature differential detection device

DOEpatents

Girling, Peter M.

1986-01-01

A temperature differential detection device for detecting the temperature differential between predetermined portions of a container wall is disclosed as comprising a Wheatstone bridge circuit for detecting resistance imbalance with a first circuit branch having a first elongated wire element mounted in thermal contact with a predetermined portion of the container wall, a second circuit branch having a second elongated wire element mounted in thermal contact with a second predetermined portion of a container wall with the wire elements having a predetermined temperature-resistant coefficient, an indicator interconnected between the first and second branches remote from the container wall for detecting and indicating resistance imbalance between the first and second wire elements, and connector leads for electrically connecting the wire elements to the remote indicator in order to maintain the respective resistance value relationship between the first and second wire elements. The indicator is calibrated to indicate the detected resistance imbalance in terms of a temperature differential between the first and second wall portions.

Axially engineered metal-insulator phase transition by graded doping VO2 nanowires.

PubMed

Lee, Sangwook; Cheng, Chun; Guo, Hua; Hippalgaonkar, Kedar; Wang, Kevin; Suh, Joonki; Liu, Kai; Wu, Junqiao

2013-03-27

The abrupt first-order metal-insulator phase transition in single-crystal vanadium dioxide nanowires (NWs) is engineered to be a gradual transition by axially grading the doping level of tungsten. We also demonstrate the potential of these NWs for thermal sensing and actuation applications. At room temperature, the graded-doped NWs show metal phase on the tips and insulator phase near the center of the NW, and the metal phase grows progressively toward the center when the temperature rises. As such, each individual NW acts as a microthermometer that can be simply read out with an optical microscope. The NW resistance decreases gradually with the temperature rise, eventually reaching 2 orders of magnitude drop, in stark contrast to the abrupt resistance change in undoped VO2 wires. This novel phase transition yields an extremely high temperature coefficient of resistivity ~10%/K, simultaneously with a very low resistivity down to 0.001 Ω·cm, making these NWs promising infrared sensing materials for uncooled microbolometers. Lastly, they form bimorph thermal actuators that bend with an unusually high curvature, ~900 m(-1)·K(-1) over a wide temperature range (35-80 °C), significantly broadening the response temperature range of previous VO2 bimorph actuators. Given that the phase transition responds to a diverse range of stimuli-heat, electric current, strain, focused light, and electric field-the graded-doped NWs may find wide applications in thermo-opto-electro-mechanical sensing and energy conversion.

Sterilization of medical equipment and contaminated articles by making use of a resistive barrier discharge

NASA Astrophysics Data System (ADS)

Uhm, Han S.; Kang, Jung G.; Choi, Eun H.; Cho, Guang S.

2012-08-01

Presented here is an apparatus consisting of an atmospheric resistive-barrier discharge for the sterilization of medical tools wrapped in typical hospital cloths, for the sterilization of manufactured drugs in typical packaging materials, and for the sterilization of biologically-contaminated articles. The sterilization apparatus consists of layers of the resistive-barrier discharge device operating at room temperature, a sterilization chamber, and an ozone destruction device. An electrical discharge in the resistive-barrier discharge system generates an atmospheric plasma in oxygen gas, generating ozone, which in turn efficiently sterilizes medical tools and biologically contaminated articles at room temperature. A sterilization experiment was carried out at an apparatus volume of 100 liters, with a sterilization chamber volume of 60 liters, and a discharge device volume of 40 liters. The sterilization in this experiment required 60 W of power for 5 hours of residence time. For a given sterilization time, the required electrical power was proportional to the apparatus volume. Ozone in the sterilization chamber was destroyed safely after sterilization.

Interfacial material for solid oxide fuel cell

DOEpatents

Baozhen, Li; Ruka, Roswell J.; Singhal, Subhash C.

1999-01-01

Solid oxide fuel cells having improved low-temperature operation are disclosed. In one embodiment, an interfacial layer of terbia-stabilized zirconia is located between the air electrode and electrolyte of the solid oxide fuel cell. The interfacial layer provides a barrier which controls interaction between the air electrode and electrolyte. The interfacial layer also reduces polarization loss through the reduction of the air electrode/electrolyte interfacial electrical resistance. In another embodiment, the solid oxide fuel cell comprises a scandia-stabilized zirconia electrolyte having high electrical conductivity. The scandia-stabilized zirconia electrolyte may be provided as a very thin layer in order to reduce resistance. The scandia-stabilized electrolyte is preferably used in combination with the terbia-stabilized interfacial layer. The solid oxide fuel cells are operable over wider temperature ranges and wider temperature gradients in comparison with conventional fuel cells.

Projection par plasma de depots de dioxyde de titane: Contribution a l'etude de leurs microstructures et proprietes electriques

NASA Astrophysics Data System (ADS)

Branland, Nadege

2002-04-01

The aim of this PhD work is, thanks to particle parameters (velocity and temperature) characterization, to try to understand the influence of plasma spray parameters on titania coating microstructures and the influence of the latter one on their electrical resistivity, for the same substrate conditions. The experimental approach has consisted in using two plasma spraying processes (Arc plasma spraying and Inductive plasma spraying) which have permitted to obtain a broad range of particle velocities and temperatures leading to coatings with specific microstructures. Despite the stoichiometry of the starting powder, all coatings obtained were grey, the oxygen loss increasing with the particle temperature. Isolating the stoichiometry influence has permitted to show that the decrease of the coatings electrical resistivity is especially due to the decrease of the number of bad interlamellar contacts.

Study of thermal stability of Cu{sub 2}Se thermoelectric material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bohra, Anil, E-mail: anilbohra786@gmail.com; Bhatt, Ranu; Bhattacharya, Shovit

2016-05-23

Sustainability of thermoelectric parameter in operating temperature range is a key consideration factor for fabricating thermoelectric generator or cooler. In present work, we have studied the stability of thermoelectric parameter of Cu{sub 2}Se within the temperature range of 50-800°C. Temperature dependent Seebeck coefficients and electrical resistivity measurement are performed under three continuous thermal cycles. X-ray diffraction pattern shows the presence of mixed cubic-monoclinic Cu{sub 2}Se phase in bare pellet which transforms to pure α-Cu{sub 2}Se phase with repeating thermal cycle. Significant enhancement in Seebeck coefficient and electrical resistivity is observed which may be attributed to (i) Se loss observed inmore » EDS and (ii) the phase transformation from mixed cubic-monoclinic structure to pure monoclinic α-Cu{sub 2}Se phase.« less

Structural, transport and thermoelectric properties of Nb-doped CaLaMnO perovskite

NASA Astrophysics Data System (ADS)

Villa, J. I.; Rodríguez, J. E.

2014-12-01

Poly-crystalline perovskite-type (CaLaMnO) Ca0.95La0.05Mn1-xNbxO3 (0.0 ≤ x ≤ 0.10) was synthesized using the conventional solid-state reaction method. Structural and morphological properties were studied by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM), respectively. Their transport and thermoelectric properties were studied from electrical resistivity ρ(T) and Seebeck coefficient S(T) measurements as a function of temperature and niobium content. The Rietveld analysis revealed a compound with orthorhombic structure, where their lattice parameters increase with the niobium content which is given by a distortion in octahedra MnO6. Electrical resistivity exhibits a semiconducting-like behavior, for low niobium contents (Nb ≤ 0.03) the magnitude of the electrical resistivity decreases, reaching minimum values close to 0.1 Ω - cm. Seebeck coefficient is negative in all studied temperature range. The temperature behavior of S(T) is interpreted in terms of variable range hopping (VRH) and Heikes model. From ρ(T) and S(T) measurements it was possible to calculate the thermoelectric power factor (PF), which reaches maximum values around 0.4 μW /K2 -cm. These values make these ceramics promising electronic thermoelectric materials.

In situ synchrotron study of electromigration induced grain rotations in Sn solder joints

DOE PAGES

Shen, Hao; Zhu, Wenxin; Li, Yao; ...

2016-04-18

In this paper we report an in situ study of the early stage of microstructure evolution induced by electromigration in a Pb-free β-Sn based solder joint by synchrotron polychromatic X-ray microdiffraction. With this technique, crystal orientation evolution is monitored at intragranular levels with high spatial and angular resolution. During the entire experiment, no crystal growth is detected, and rigid grain rotation is observed only in the two grains within the current crowding region, where high density and divergence of electric current occur. Theoretical calculation indicates that the trend of electrical resistance drop still holds under the present conditions in themore » grain with high electrical resistivity, while the other grain with low resistivity reorients to align its a-axis more parallel with the ones of its neighboring grains. A detailed study of dislocation densities and subgrain boundaries suggests that grain rotation in β-Sn, unlike grain rotation in high melting temperature metals which undergo displacive deformation, is accomplished via diffusional process mainly, due to the high homologous temperature.« less

Superconductivity in sputtered CuMO6S8

NASA Technical Reports Server (NTRS)

Alterovitz, S.; Woollam, J. A.; Kammerdiner, L.; Luo, H. L.; Martin, C.

1977-01-01

Samples were prepared by melting the metals, followed by annealing to various temperatures. The result was a structurally weak material. Sputtered films on sapphire substrates were prepared and studied. The substrates give the films mechanical strength and permit easy attachment of electrical leads. Materials were characterized by X-ray diffraction, electron microscopy, electrical resistance vs. temperature, and critical current measurements. Some of the results on CuMo6S8 are presented.

Resistive switching characteristics of interfacial phase-change memory at elevated temperature

NASA Astrophysics Data System (ADS)

Mitrofanov, Kirill V.; Saito, Yuta; Miyata, Noriyuki; Fons, Paul; Kolobov, Alexander V.; Tominaga, Junji

2018-04-01

Interfacial phase-change memory (iPCM) devices were fabricated using W and TiN for the bottom and top contacts, respectively, and the effect of operation temperature on the resistive switching was examined over the range between room temperature and 200 °C. It was found that the high-resistance (RESET) state in an iPCM device drops sharply at around 150 °C to a low-resistance (SET) state, which differs by ˜400 Ω from the SET state obtained by electric-field-induced switching. The iPCM device SET state resistance recovered during the cooling process and remained at nearly the same value for the RESET state. These resistance characteristics greatly differ from those of the conventional Ge-Sb-Te (GST) alloy phase-change memory device, underscoring the fundamentally different switching nature of iPCM devices. From the thermal stability measurements of iPCM devices, their optimal temperature operation was concluded to be less than 100 °C.

Thermoelectric Properties of Bi Doped Tetrahedrite

NASA Astrophysics Data System (ADS)

Prem Kumar, D. S.; Chetty, R.; Femi, O. E.; Chattopadhyay, K.; Malar, P.; Mallik, R. C.

2017-05-01

Bi doped tetrahedrites with nominal compositions of Cu12Sb4- x Bi x S13 ( x = 0, 0.2, 0.4, 0.6, 0.8) were synthesized by the solid state reaction method. Powder x-ray diffraction patterns confirmed that Cu12Sb4S13 (tetrahedrite structure) was the main phase, along with Cu3SbS4 and Cu3SbS3 as the secondary phases. Electron probe microanalysis provided the elemental composition of all the samples. It was confirmed that the main phase is the tetrahedrite phase with slight deviations in the stoichiometry. All the transport properties were measured between 423 K and 673 K. The electrical resistivity increased with an increase in Bi content for all the samples, possibly induced by the variation in the carrier concentration, which may be due to the influence of impurity phases. The increase in electrical resistivity with an increase in temperature indicates the degenerate semiconducting nature of the samples. The absolute Seebeck coefficient is positive throughout the temperature range indicating the p-type nature of the samples. The Seebeck coefficient for all the samples increased with an increase in Bi content as electrical resistivity. The variation of electrical resistivity and the Seebeck coefficient with doping can be attributed to the changes in the carrier concentration of the samples. The total thermal conductivity increases with an increase in temperature and decreases with an increase in the Bi content that could be due to the reduction in carrier thermal conductivity. The highest thermoelectric figure of merit ( zT) 0.84 at 673 K was obtained for the sample with x = 0.2 due to lower thermal conductivity (1.17 W/m K).

Novel Cryogenic Heaters: Sputter Deposited Cermet Materials with Low Temperature Coefficients of Resistivity

NASA Astrophysics Data System (ADS)

Yeager, C. J.; Courts, S. S.; Chapin, L.

2004-06-01

The electrical properties of a novel cryogenic heater are presented. A new ceramic-metal composition (cermet) has been developed that can be sputter deposited. This material has a very low temperature coefficient of resistivity. Resistivity measurements as a function of temperature are presented. The cermet has a constant resistance to within 0.1% between 77 K and 50 mK. At 4.2 K the d(logR)/d(logT) value is approximately -0.0005. The resistance change between room temperature and 4.2 K is 2.5%. The cermet heater will be compared to other low temperature coefficient of resistivity alloys (Evanohm, phosphor-bronze, nichrome and platinum-tungsten wire) that are used for cryogenic heaters and fixed resistors. Unlike the wire alloys, this material can be sputter deposited. This allows various die designs (meander patterns) to control the final resistance. The die can be mounted into standard commercial cryogenic sensor packages. Compared to other wire alloys, this allows for a simpler implementation for a cryogenic heater and fixed resistance standards. The material can also be deposited onto existing structures such as MEMS based heat capacity chip under development.

Optical Absorption and Electric Resistivity of an l-Cysteine Film

NASA Astrophysics Data System (ADS)

Kamada, Masao; Hideshima, Takuya; Azuma, Junpei; Yamamoto, Isamu; Imamura, Masaki; Takahashi, Kazutoshi

2016-12-01

The optical and electric properties of an l-cysteine film have been investigated to understand its applicability to bioelectronics. The fundamental absorption is the allowed transition having the threshold at 5.8 eV and the absorption is due to the charge-transfer type transition from sulfur-3sp to oxygen-2p and/or carbon-2p states, while absorptions more than 9 eV can be explained with intra-atomic transitions in the functional groups. The electric resistivity is 2.0 × 104 Ω m at room temperature and increases as the sample temperature decreases. The results indicate that the l-cysteine film is a p-type semiconductor showing the hole conduction caused by the sulfur-3sp occupied states and unknown impurity or defect states as acceptors. The electron affinity of the l-cysteine film is derived as ≦-0.3 eV.

Characterization of Resistances of a Capacitive Deionization System

DOE PAGES

Qu, Yatian; Baumann, Theodore F.; Santiago, Juan G.; ...

2015-07-27

Capacitive deionization (CDI) is a promising desalination technology, which operates at low pressure, low temperature, requires little infrastructure, and has the potential to consume less energy for brackish water desalination. However, CDI devices consume significantly more energy than the theoretical thermodynamic minimum, and this is at least partly due to resistive power dissipation. We here report our efforts to characterize electric resistances in a CDI system, with a focus on the resistance associated with the contact between current collectors and porous electrodes. We present an equivalent circuit model to describe resistive components in a CDI cell. We propose measurable figuresmore » of merit to characterize cell resistance. We also show that contact pressure between porous electrodes and current collectors can significantly reduce contact resistance. As a result, we propose and test an alternative electrical contact configuration which uses a pore-filling conductive adhesive (silver epoxy) and achieves significant reductions in contact resistance.« less

Long-term ERT monitoring of biogeochemical changes of an aged hydrocarbon contamination.

PubMed

Caterina, David; Flores Orozco, Adrian; Nguyen, Frédéric

2017-06-01

Adequate management of contaminated sites requires information with improved spatio-temporal resolution, in particular to assess bio-geochemical processes, such as the transformation and degradation of contaminants, precipitation of minerals or changes in groundwater geochemistry occurring during and after remediation procedures. Electrical Resistivity Tomography (ERT), a geophysical method sensitive to pore-fluid and pore-geometry properties, permits to gain quasi-continuous information about subsurface properties in real-time and has been consequently widely used for the characterization of hydrocarbon-impacted sediments. However, its application for the long-term monitoring of processes accompanying natural or engineered bioremediation is still difficult due to the poor understanding of the role that biogeochemical processes play in the electrical signatures. For in-situ studies, the task is further complicated by the variable signal-to-noise ratio and the variations of environmental parameters leading to resolution changes in the electrical images. In this work, we present ERT imaging results for data collected over a period of two years on a site affected by a diesel fuel contamination and undergoing bioremediation. We report low electrical resistivity anomalies in areas associated to the highest contaminant concentrations likely due transformations of the contaminant due to microbial activity and accompanying release of metabolic products. We also report large seasonal variations of the bulk electrical resistivity in the contaminated areas in correlation with temperature and groundwater level fluctuations. However, the amplitude of bulk electrical resistivity variations largely exceeds the amplitude expected given existing petrophysical models. Our results suggest that the variations in electrical properties are mainly controlled by microbial activity which in turn depends on soil temperature and hydrogeological conditions. Therefore, ERT can be suggested as a promising tool to track microbial activity during bioremediation even though further research is still needed to completely understand the bio-geochemical processes involved and their impact on electrical signatures. Copyright © 2017 Elsevier B.V. All rights reserved.

Long-term ERT monitoring of biogeochemical changes of an aged hydrocarbon contamination

NASA Astrophysics Data System (ADS)

Caterina, David; Flores Orozco, Adrian; Nguyen, Frédéric

2017-06-01

Adequate management of contaminated sites requires information with improved spatio-temporal resolution, in particular to assess bio-geochemical processes, such as the transformation and degradation of contaminants, precipitation of minerals or changes in groundwater geochemistry occurring during and after remediation procedures. Electrical Resistivity Tomography (ERT), a geophysical method sensitive to pore-fluid and pore-geometry properties, permits to gain quasi-continuous information about subsurface properties in real-time and has been consequently widely used for the characterization of hydrocarbon-impacted sediments. However, its application for the long-term monitoring of processes accompanying natural or engineered bioremediation is still difficult due to the poor understanding of the role that biogeochemical processes play in the electrical signatures. For in-situ studies, the task is further complicated by the variable signal-to-noise ratio and the variations of environmental parameters leading to resolution changes in the electrical images. In this work, we present ERT imaging results for data collected over a period of two years on a site affected by a diesel fuel contamination and undergoing bioremediation. We report low electrical resistivity anomalies in areas associated to the highest contaminant concentrations likely due transformations of the contaminant due to microbial activity and accompanying release of metabolic products. We also report large seasonal variations of the bulk electrical resistivity in the contaminated areas in correlation with temperature and groundwater level fluctuations. However, the amplitude of bulk electrical resistivity variations largely exceeds the amplitude expected given existing petrophysical models. Our results suggest that the variations in electrical properties are mainly controlled by microbial activity which in turn depends on soil temperature and hydrogeological conditions. Therefore, ERT can be suggested as a promising tool to track microbial activity during bioremediation even though further research is still needed to completely understand the bio-geochemical processes involved and their impact on electrical signatures.

Disorder induced magnetism and electrical conduction in La doped Ca2FeMoO6 double perovskite

NASA Astrophysics Data System (ADS)

Poddar, Asok; Bhowmik, R. N.; Muthuselvam, I. Panneer

2010-11-01

We report the magnetism and electrical transport properties of La doped Ca2FeMoO6 double perovskite. Reduction in magnetic moment, nonmonotonic variation in magnetic ordering temperature (TC), increasing magnetic hardness, low temperature resistivity upturn, and loss of metallic conductivity are some of the major changes that we observed due to La doping induced disorder in double perovskite structure. The increase in magnetic disorder in La doped samples and its effect on TC is more consistent with the mean field theory. The modification in electronic band structure due to La doping is understood by establishing a correlation between the temperature dependence of electrical conductivity and thermoelectric power.

Intrinsic high electrical conductivity of stoichiometric SrNb O3 epitaxial thin films

NASA Astrophysics Data System (ADS)

Oka, Daichi; Hirose, Yasushi; Nakao, Shoichiro; Fukumura, Tomoteru; Hasegawa, Tetsuya

2015-11-01

SrV O3 and SrNb O3 are perovskite-type transition-metal oxides with the same d1 electronic configuration. Although SrNb O3 (4 d1 ) has a larger d orbital than SrV O3 (3 d1 ), the reported electrical resistivity of SrNb O3 is much higher than that of SrV O3 , probably owing to nonstoichiometry. In this paper, we grew epitaxial, high-conductivity stoichiometric SrNb O3 using pulsed laser deposition. The growth temperature strongly affected the Sr/Nb ratio and the oxygen content of the films, and we obtained stoichiometric SrNb O3 at a very narrow temperature window around 630 °C. The stoichiometric SrNb O3 epitaxial thin films grew coherently on KTa O3 (001) substrates with high crystallinity. The room-temperature resistivity of the stoichiometric film was 2.82 ×10-5Ω cm , one order of magnitude lower than the lowest reported value of SrNb O3 and comparable with that of SrV O3 . We observed a T -square dependence of resistivity below T*=180 K and non-Drude behavior in near-infrared absorption spectroscopy, attributable to the Fermi-liquid nature caused by electron correlation. Analysis of the T -square coefficient A of resistivity experimentally revealed that the 4 d orbital of Nb that is larger than the 3 d ones certainly contributes to the high electrical conduction of SrNb O3 .

A study of electron and thermal transport in layered titanium disulphide single crystals

NASA Astrophysics Data System (ADS)

Suri, Dhavala; Siva, Vantari; Joshi, Shalikram; Senapati, Kartik; Sahoo, P. K.; Varma, Shikha; Patel, R. S.

2017-12-01

We present a detailed study of thermal and electrical transport behavior of single crystal titanium disulphide flakes, which belong to the two dimensional, transition metal dichalcogenide class of materials. In-plane Seebeck effect measurements revealed a typical metal-like linear temperature dependence in the range of 85-285 K. Electrical transport measurements with in-plane current geometry exhibited a nearly T 2 dependence of resistivity in the range of 42-300 K. However, transport measurements along the out-of-plane current geometry showed a transition in temperature dependence of resistivity from T 2 to T 5 beyond 200 K. Interestingly, Au ion-irradiated TiS2 samples showed a similar T 5 dependence of resistivity beyond 200 K, even in the current-in-plane geometry. Micro-Raman measurements were performed to study the phonon modes in both pristine and ion-irradiated TiS2 crystals.

Structural and magnetic properties of ytterbium substituted spinel ferrites

NASA Astrophysics Data System (ADS)

Alonizan, Norah H.; Qindeel, Rabia

2018-06-01

Chemical co-precipitation route adopted to synthesize the magnetic materials. In the present work, iron is replaced by ytterbium ion in manganese-based spinel ferrites. The yield chemically represented by MnYb x Fe2- x O4 ( x = 0.00, 0.025, 0.05, 0.075, 0.10) and its structural, magnetic and electrical properties were observed. The cubic structure of spinel ferrites was confirmed by X-ray diffraction analysis. Spherically shaped grains were perceived in SEM pictures and size lessened with the growth of ytterbium concentration. SEM profile also shows little irregularity in spherical particles. The substitution of ytterbium (Yb) results in the enhancement of electrical resistivity. The resistivity was reduced with the gradual increase in temperature from 303 to 693 K. The trend of activation energy was found to be similar to that of room temperature resistivity. The coercivity of samples was raised with Yb-ion substitution while saturation magnetization and remanence reduced.

Use of small scale electrical resistivity tomography to identify soil-root interactions during deficit irrigation

NASA Astrophysics Data System (ADS)

Vanella, D.; Cassiani, G.; Busato, L.; Boaga, J.; Barbagallo, S.; Binley, A.; Consoli, S.

2018-01-01

Plant roots activity affect the exchanges of mass and energy between the soil and atmosphere. However, it is challenging to monitor the activity of the root-zone because roots are not visible from the soil surface, and root systems undergo spatial and temporal variations in response to internal and external conditions. Therefore, measurements of the activity of root systems are interesting to ecohydrologists in general, and are especially important for specific applications, such as irrigation water management. This study demonstrates the use of small scale three-dimensional (3-D) electrical resistivity tomography (ERT) to monitor the root-zone of orange trees irrigated by two different regimes: (i) full rate, in which 100% of the crop evapotranspiration (ETc) is provided; and (ii) partial root-zone drying (PRD), in which 50% of ETc is supplied to alternate sides of the tree. We performed time-lapse 3-D ERT measurements on these trees from 5 June to 24 September 2015, and compared the long-term and short-term changes before, during, and after irrigation events. Given the small changes in soil temperature and pore water electrical conductivity, we interpreted changes of soil electrical resistivity from 3-D ERT data as proxies for changes in soil water content. The ERT results are consistent with measurements of transpiration flux and soil temperature. The changes in electrical resistivity obtained from ERT measurements in this case study indicate that root water uptake (RWU) processes occur at the 0.1 m scale, and highlight the impact of different irrigation schemes.

Estimation of Joule heating and its role in nonlinear electrical response of Tb0.5Sr0.5MnO3 single crystal

NASA Astrophysics Data System (ADS)

Nhalil, Hariharan; Elizabeth, Suja

2016-12-01

Highly non-linear I-V characteristics and apparent colossal electro-resistance were observed in non-charge ordered manganite Tb0.5Sr0.5MnO3 single crystal in low temperature transport measurements. Significant changes were noticed in top surface temperature of the sample as compared to its base while passing current at low temperature. By analyzing these variations, we realize that the change in surface temperature (ΔTsur) is too small to have caused by the strong negative differential resistance. A more accurate estimation of change in the sample temperature was made by back-calculating the sample temperature from the temperature variation of resistance (R-T) data (ΔTcal), which was found to be higher than ΔTsur. This result indicates that there are large thermal gradients across the sample. The experimentally derived ΔTcal is validated with the help of a simple theoretical model and estimation of Joule heating. Pulse measurements realize substantial reduction in Joule heating. With decrease in sample thickness, Joule heating effect is found to be reduced. Our studies reveal that Joule heating plays a major role in the nonlinear electrical response of Tb0.5Sr0.5MnO3. By careful management of the duty cycle and pulse current I-V measurements, Joule heating can be mitigated to a large extent.

An experimental study on the thermal characteristics and heating effect of arc-fault from Cu core in residential electrical wiring fires

PubMed Central

Du, Jian-Hua; Zeng, Yi; Pan, Leng; Zhang, Ren-Cheng

2017-01-01

The characteristics of a series direct current (DC) arc-fault including both electrical and thermal parameters were investigated based on an arc-fault simulator to provide references for multi-parameter electrical fire detection method. Tests on arc fault behavior with three different initial circuit voltages, resistances and arc gaps were conducted, respectively. The influences of circuit conditions on arc dynamic image, voltage, current or power were interpreted. Also, the temperature rises of electrode surface and ambient air were studied. The results showed that, first, significant variations of arc structure and light emitting were observed under different conditions. A thin outer burning layer of vapor generated from electrodes with orange light was found due to the extremely high arc temperature. Second, with the increasing electrode gap in discharging, the arc power was shown to have a non monotonic relationship with arc length for constant initial circuit voltage and resistance. Finally, the temperature rises of electrode surface caused by heat transfer from arc were found to be not sensitive with increasing arc length due to special heat transfer mechanism. In addition, temperature of ambient air showed a large gradient in radial direction of arc. PMID:28797055

An experimental study on the thermal characteristics and heating effect of arc-fault from Cu core in residential electrical wiring fires.

PubMed

Du, Jian-Hua; Tu, Ran; Zeng, Yi; Pan, Leng; Zhang, Ren-Cheng

2017-01-01

The characteristics of a series direct current (DC) arc-fault including both electrical and thermal parameters were investigated based on an arc-fault simulator to provide references for multi-parameter electrical fire detection method. Tests on arc fault behavior with three different initial circuit voltages, resistances and arc gaps were conducted, respectively. The influences of circuit conditions on arc dynamic image, voltage, current or power were interpreted. Also, the temperature rises of electrode surface and ambient air were studied. The results showed that, first, significant variations of arc structure and light emitting were observed under different conditions. A thin outer burning layer of vapor generated from electrodes with orange light was found due to the extremely high arc temperature. Second, with the increasing electrode gap in discharging, the arc power was shown to have a non monotonic relationship with arc length for constant initial circuit voltage and resistance. Finally, the temperature rises of electrode surface caused by heat transfer from arc were found to be not sensitive with increasing arc length due to special heat transfer mechanism. In addition, temperature of ambient air showed a large gradient in radial direction of arc.

Power flow analysis and optimal locations of resistive type superconducting fault current limiters.

PubMed

Zhang, Xiuchang; Ruiz, Harold S; Geng, Jianzhao; Shen, Boyang; Fu, Lin; Zhang, Heng; Coombs, Tim A

2016-01-01

Based on conventional approaches for the integration of resistive-type superconducting fault current limiters (SFCLs) on electric distribution networks, SFCL models largely rely on the insertion of a step or exponential resistance that is determined by a predefined quenching time. In this paper, we expand the scope of the aforementioned models by considering the actual behaviour of an SFCL in terms of the temperature dynamic power-law dependence between the electrical field and the current density, characteristic of high temperature superconductors. Our results are compared to the step-resistance models for the sake of discussion and clarity of the conclusions. Both SFCL models were integrated into a power system model built based on the UK power standard, to study the impact of these protection strategies on the performance of the overall electricity network. As a representative renewable energy source, a 90 MVA wind farm was considered for the simulations. Three fault conditions were simulated, and the figures for the fault current reduction predicted by both fault current limiting models have been compared in terms of multiple current measuring points and allocation strategies. Consequently, we have shown that the incorporation of the E - J characteristics and thermal properties of the superconductor at the simulation level of electric power systems, is crucial for estimations of reliability and determining the optimal locations of resistive type SFCLs in distributed power networks. Our results may help decision making by distribution network operators regarding investment and promotion of SFCL technologies, as it is possible to determine the maximum number of SFCLs necessary to protect against different fault conditions at multiple locations.

Grain Boundary Resistivity of Yttria-Stabilized Zirconia at 1400°C

DOE PAGES

Wang, J.; Du, A.; Yang, Di; ...

2013-01-01

Tmore » he grain size dependence of the bulk resistivity of 3 mol% yttria-stabilized zirconia at 1400°C was determined from the effect of a dc electric field E a = 18.1  V/cm on grain growth and the corresponding electric current during isothermal annealing tests. Employing the brick layer model, the present annealing test results were in accordance with extrapolations of the values obtained at lower temperature employing impedance spectroscopy and 4-point-probe dc. he combined values give that the magnitude of the grain boundary resistivity ρ b = 133  ohm-cm. he electric field across the grain boundary width was 28–43 times the applied field for the grain size and current ranges in the present annealing test.« less

Enhanced Electrical Resistivity after Rapid Cool of the Specimen in Layered Oxide LixCoO2

NASA Astrophysics Data System (ADS)

Miyoshi, K.; Manami, K.; Takeuchi, J.; Sasai, R.; Nishigori, S.

Measurements of electrical resistivity and DC magnetization for LixCoO2 (x=0.71 and 0.64) have been performed using single crystal specimens. It has been found that electrical resistivity measured after rapid cool of the specimen becomes larger compared with that after slow cool below the temperature TS∽155 K at which charge ordering of Co3+/Co4+(=2:1) occurs. The behavior can be understood considering that the charge ordering can be destroyed by Li ions which are in an amorphous state after rapid cool via the interlayer Coulomb interactions, and also that the disordered Co3+/Co4+ state becomes insulating, while the charge ordered state has a metallic electronic structure, as recently revealed by the scanning tunneling microscopy.

Electric Conduction in Solids: a Pedagogical Approach Supported by Laboratory Measurements and Computer Modelling Environments

NASA Astrophysics Data System (ADS)

Bonura, A.; Capizzo, M. C.; Fazio, C.; Guastella, I.

2008-05-01

In this paper we present a pedagogic approach aimed at modeling electric conduction in semiconductors, built by using NetLogo, a programmable modeling environment for building and exploring multi-agent systems. `Virtual experiments' are implemented to confront predictions of different microscopic models with real measurements of electric properties of matter, such as resistivity. The relations between these electric properties and other physical variables, like temperature, are, then, analyzed.

Improved high modulus carbon fibers. [elimination of hazards due to electrical properties

NASA Technical Reports Server (NTRS)

Ansell, G. S.; Chen, S. H.; Diffendorf, R. J.; Kim, C. M.; Lemaistre, C. W.; Lyman, C. E.; Shen, T. H.; Wang, J. J. H.

1979-01-01

Carbon fibers which are electrically insulating but still maintain the mechanical properties of the original carbon fibers were investigated. Three approaches were taken to increase the electrical resistance of carbon fibers: (1) boron nitride (BN) coatings; (2) doping of carbon fibers to alter their electrical properties; and (3) low temperature final heat treatment. The structure of carbon fibers and its effect upon properties was also studied. Results are presented.

High temperature strain measurement with a resistance strain gage

NASA Technical Reports Server (NTRS)

Lei, Jih-Fen; Fichtel, ED; Mcdaniel, Amos

1993-01-01

A PdCr based electrical resistance strain gage was demonstrated in the laboratory to be a viable sensor candidate for static strain measurement at high temperatures. However, difficulties were encountered while transferring the sensor to field applications. This paper is therefore prepared for recognition and resolution of the problems likely to be encountered with PdCr strain gages in field applications. Errors caused by the measurement system, installation technique and lead wire attachment are discussed. The limitations and some considerations related to the temperature compensation technique used for this gage are also addressed.

Efros-Shklovskii variable range hopping and nonlinear transport in 1 T /1 T'-MoS2

NASA Astrophysics Data System (ADS)

Papadopoulos, N.; Steele, G. A.; van der Zant, H. S. J.

2017-12-01

We have studied temperature- and electric-field-dependent carrier transport in single flakes of MoS2 treated with n -butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, a comparison between two- and four-probe measurements yields a contact resistance that increases significantly with decreasing temperature.

Progress in catalytic ignition fabrication, modeling and infrastructure : (part 1) catalytic ignition studies.

DOT National Transportation Integrated Search

2014-02-01

Platinum has been recognized as a viable combustion catalyst for use in transportation : engines operating at fuel-lean conditions. Its change in electrical resistance with temperature : has been used to measure light-off temperatures and rates of he...

Grain size effect on the electrical and magneto-transport properties of nanosized Pr0.67Sr0.33MnO3

NASA Astrophysics Data System (ADS)

Ng, S. W.; Lim, K. P.; Halim, S. A.; Jumiah, H.

2018-06-01

In this study, nanosized of Pr0.67Sr0.33MnO3 prepared via sol-gel method followed by heat treatment at 600-1000 °C in intervals of 100 °C were synthesized. The structure, surface morphology, electrical, magneto-transport and magnetic properties of the samples were investigated. Rietveld refinements of X-ray diffraction patterns confirm that single phase orthorhombic crystal structure with the space group of Pnma (62) is formed at 600 °C. A strong dependence of surface morphology, electrical and magneto-transport properties on grain size have been observed in this manganites system. Both grain size and crystallite size are increases with the sintering temperature due to the congregation effect. Upon increasing grain size, the paramagnetic-ferromagnetic transition temperature increases from 278 K to 295 K. The resistivity drops and the metal-insulator transition temperature shifted from 184 K to 248 K with increases of grain size due to the grain growth and reduction of grain boundary. Below metal-insulator transition temperature, the samples fit well to the combination of resistivity due to grain or domain boundaries, electron-electron scattering process and electron-phonon interaction. The resistivity data above the metal-insulator transition temperature is well described using small polaron hopping and variable range hopping models. It is found that the negative magnetoresistance also increases with larger grain size where the highest %MR of - 26% can be observed for sample sintered at 1000 °C (245 nm).

Influence of plant roots on electrical resistivity measurements of cultivated soil columns

NASA Astrophysics Data System (ADS)

Maloteau, Sophie; Blanchy, Guillaume; Javaux, Mathieu; Garré, Sarah

2016-04-01

Electrical resistivity methods have been widely used for the last 40 years in many fields: groundwater investigation, soil and water pollution, engineering application for subsurface surveys, etc. Many factors can influence the electrical resistivity of a media, and thus influence the ERT measurements. Among those factors, it is known that plant roots affect bulk electrical resistivity. However, this impact is not yet well understood. The goals of this experiment are to quantify the effect of plant roots on electrical resistivity of the soil subsurface and to map a plant roots system in space and time with ERT technique in a soil column. For this research, it is assumed that roots system affect the electrical properties of the rhizosphere. Indeed the root activity (by transporting ions, releasing exudates, changing the soil structure,…) will modify the rhizosphere electrical conductivity (Lobet G. et al, 2013). This experiment is included in a bigger research project about the influence of roots system on geophysics measurements. Measurements are made on cylinders of 45 cm high and a diameter of 20 cm, filled with saturated loam on which seeds of Brachypodium distachyon (L.) Beauv. are sowed. Columns are equipped with electrodes, TDR probes and temperature sensors. Experiments are conducted at Gembloux Agro-Bio Tech, in a growing chamber with controlled conditions: temperature of the air is fixed to 20° C, photoperiod is equal to 14 hours, photosynthetically active radiation is equal to 200 μmol m-2s-1, and air relative humidity is fixed to 80 %. Columns are fully saturated the first day of the measurements duration then no more irrigation is done till the end of the experiment. The poster will report the first results analysis of the electrical resistivity distribution in the soil columns through space and time. These results will be discussed according to the plant development and other controlled factors. Water content of the soil will also be detailed. Reference Lobet G, Hachez C, Chaumont F, Javaux M, Draye X. Root water uptake and water flow in the soil-root domain. In: Eshel A and Beeckman T, editors. Plant Roots. The Hidden Half. Boca Raton (US):CRC Press,2013. p. 24-1 - 24-13.

Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

NASA Astrophysics Data System (ADS)

Das, Amit Kumar; Meikap, Ajit Kumar

2017-12-01

In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

NASA Astrophysics Data System (ADS)

Das, Amit Kumar; Meikap, Ajit Kumar

2018-06-01

In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barone, C., E-mail: cbarone@unisa.it; Mauro, C.; Pagano, S.

Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions derivingmore » from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.« less

Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

NASA Astrophysics Data System (ADS)

Zhang, Shumao; Kuo, Yue

2018-03-01

Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

Thermal and electric properties of Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y)

NASA Technical Reports Server (NTRS)

Lim, Z. S.; Han, K. H.; Lee, Sung-Ik; Jeong, Yoon H.; Song, Y. S.; Park, Y. W.

1990-01-01

Electric resistivity, magnetic susceptibility, thermoelectric power, and Hall coefficient of Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y) whose onset temperature of the superconductivity are 24 K and 23 K were measured. Experimental results show many interesting features. In particular, the Hall coefficients are negative and relatively flat as a function of temperature. However, the temperature dependence of the thermoelectric power (TEP) for these two samples shows the positive sign for both samples in contrast to the previous results. Moreover TEP for both samples remains flat in the normal state below 250 K, but decreases rapidly above 250 K. TEP of only Pr(1.85)Ce(0.15)CuO(4-y) shows a peak near 50 K. Finally onset temperatures of sudden drop of TEP are higher than those of resistance drop. The physical properties of these samples produced at different conditions such as different heat treatment temperatures, atmospheres were also measured. TEP and resistance measurement show that oxygen deficiency is essential to produce better superconducting samples. Correlation between TEP and superconductivity for these different samples will be discussed.

Thermal and electric properties of Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y)

NASA Technical Reports Server (NTRS)

Lim, Z. S.; Han, K. H.; Lee, Sung-Ik; Jeong, Yoon H.; Song, Y. S.; Park, Y. W.

1991-01-01

Electric resistivity, magnetic susceptibility, thermoelectric power, and Hall coefficient of Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y) whose onset temperature of the superconductivity are 24 and 23 K were measured. Experimental results show many interesting features. In particular, the Hall coefficients are negative and relatively flat as a function of temperature. However, the temperature dependence of the thermoelectric power (TEP) for these two samples shows the positive sign for both samples in contrast to the previous results. Moreover, TEP for both samples remains flat in the normal state below 250 K, but decreases rapidly above 250 K. TEP of only Pr(1.85)Ce(0.15)CuO(4-y) shows a peak near 50 K. Finally, onset temperatures of sudden drop of TEP are higher than those of resistance drop. The physical properties of these samples produced at different conditions such as different heat treatment temperatures, atmospheres were also measured. TEP and resistance measurement show that oxygen deficiency is essential to produce better superconducting samples. Correlation between TEP and superconductivity for these different samples are discussed.

High Power Density Motors

NASA Technical Reports Server (NTRS)

Kascak, Daniel J.

2004-01-01

With the growing concerns of global warming, the need for pollution-free vehicles is ever increasing. Pollution-free flight is one of NASA's goals for the 21" Century. , One method of approaching that goal is hydrogen-fueled aircraft that use fuel cells or turbo- generators to develop electric power that can drive electric motors that turn the aircraft's propulsive fans or propellers. Hydrogen fuel would likely be carried as a liquid, stored in tanks at its boiling point of 20.5 K (-422.5 F). Conventional electric motors, however, are far too heavy (for a given horsepower) to use on aircraft. Fortunately the liquid hydrogen fuel can provide essentially free refrigeration that can be used to cool the windings of motors before the hydrogen is used for fuel. Either High Temperature Superconductors (HTS) or high purity metals such as copper or aluminum may be used in the motor windings. Superconductors have essentially zero electrical resistance to steady current. The electrical resistance of high purity aluminum or copper near liquid hydrogen temperature can be l/lOO* or less of the room temperature resistance. These conductors could provide higher motor efficiency than normal room-temperature motors achieve. But much more importantly, these conductors can carry ten to a hundred times more current than copper conductors do in normal motors operating at room temperature. This is a consequence of the low electrical resistance and of good heat transfer coefficients in boiling LH2. Thus the conductors can produce higher magnetic field strengths and consequently higher motor torque and power. Designs, analysis and actual cryogenic motor tests show that such cryogenic motors could produce three or more times as much power per unit weight as turbine engines can, whereas conventional motors produce only 1/5 as much power per weight as turbine engines. This summer work has been done with Litz wire to maximize the current density. The current is limited by the amount of heat it generates. By increasing the heat transfer out of the wire, the wires can carry a larger current and therefore produce more force. This was done by increasing the surface area of the wire to allow more coolant to flow over it. Litz wire was used because it can carry high frequency current. It also can be deformed into configurations that would increase the surface area. The best configuration was determined by heat transfer and force plots that were generated using Maxwell 2D. Future work will be done by testing and measuring the thrust force produced by the wires in a magnetic field.

Domain Wall Evolution in Phase Transforming Oxides

DTIC Science & Technology

2015-01-14

configumtions under driving forces (e.g. changes in temperature and electric fields) in an effort to: 1) understand the underlying linkage between -1...configurations under driving forces (e.g. changes in temperature and electric fields) in an effort to: 1) understand the underlying linkage between...Extensive domain wall motion and deaging resistance in morphotropic 0.55Bi(Ni1/2Ti1/2)O3–0.45PbTiO3 polycrystalline ferroelectrics, Applied Physics Letters

Influence of Chromium Doping on Electrical and Magnetic Behavior of Nd0.5Sr0.5MnO3 System

NASA Astrophysics Data System (ADS)

Lalitha, G.; Pavan Kumar, N.; Venugopal Reddy, P.

2018-04-01

With a view to understand the influence of chromium doping at the Mn site on the electrical and magnetic behavior of the Nd0.5Sr0.5MnO3 manganite system, a series of samples were prepared by the citrate sol-gel route method. The samples were characterized structurally by XRD. A systematic investigation of electrical resistivity over a temperature range 5-300 K was carried out mainly to understand the magneto-transport behavior in these materials. Studies on the variation of magnetization with temperature over a temperature range 80-330 K were undertaken. Investigation of magnetization at different magnetic fields at two different temperatures, viz. 80 and 300 K, was also carried out. The results show that chromium doping gave typical electrical and magnetic properties. It has been concluded that the coexistence of charge ordered and ferromagnetic phases induced by chromium doping plays an important role in the low-temperature behavior of the system.

Annealing Effects on the Normal-State Resistive Properties of Underdoped Cuprates

NASA Astrophysics Data System (ADS)

Vovk, R. V.; Khadzhai, G. Ya.; Nazyrov, Z. F.; Kamchatnaya, S. N.; Feher, A.; Dobrovolskiy, O. V.

2018-05-01

The influence of room-temperature annealing on the parameters of the basal-plane electrical resistance of underdoped YBa_2Cu_3O_{7-δ } and HoBa_2Cu_3O_{7-δ } single crystals in the normal and superconducting states is investigated. The form of the derivatives dρ (T)/dT makes it possible to determine the onset temperature of the fluctuation conductivity and indicates a nonuniform distribution of the labile oxygen. Annealing has been revealed to lead to a monotonic decrease in the oxygen deficiency, that primarily manifests itself as a decrease in the residual resistance, an increase of T_c, and a decrease in the Debye temperature.

The effect of substrate temperature on the microstructural, electrical and optical properties of Sn-doped indium oxide thin films

NASA Astrophysics Data System (ADS)

Raoufi, Davood; Taherniya, Atefeh

2015-06-01

In this work, Sn doping In2O3 (ITO) thin films with a thickness of 200 nm were deposited on glass substrates by electron beam evaporation (EBE) method at different substrate temperatures. The crystal structure of these films was studied by X-ray diffraction technique. The sheet resistance was measured by a four-point probe. Van der Pauw method was used to measure carrier density and mobility of ITO films. The optical transmittance spectra were recorded in the wavelength region of 300-800 nm. Scanning electron microscope (SEM) has been used for the surface morphology analysis. The prepared ITO films exhibited body-centered cubic (BCC) structure with preferred orientation of growth along the (2 2 2) crystalline plane. The grain size of the films increases by rising the substrate temperature. Transparency of the films, over the visible light region, is increased with increasing the substrate temperature. It is found that the electrical properties of ITO films are significantly affected by substrate temperature. The electrical resistivity decreases with increasing substrate temperature, whereas the carrier density and mobility are enhanced with an increase in substrate temperature. The evaluated values of energy band gap Eg for ITO films were increase from 3.84 eV to 3.91 eV with increasing the substrate temperatures from 200 °C to 500 °C. The SEM micrographs of the films revealed a homogeneous growth without perceptible cracks with particles which are well covered on the substrate.

Exploring electrical resistance: a novel kinesthetic model helps to resolve some misconceptions

NASA Astrophysics Data System (ADS)

Cottle, Dan; Marshall, Rick

2016-09-01

A simple ‘hands on’ physical model is described which displays analogous behaviour to some aspects of the free electron theory of metals. Using it students can get a real feel for what is going on inside a metallic conductor. Ohms Law, the temperature dependence of resistivity, the dependence of resistance on geometry, how the conduction electrons respond to a potential difference and the concepts of mean free path and drift speed of the conduction electrons can all be explored. Some quantitative results obtained by using the model are compared with the predictions of Drude’s free electron theory of electrical conduction.

Effect of praseodymium on the electrical resistance of YВа2Сu3О7-δ single crystals

NASA Astrophysics Data System (ADS)

Vovk, R. V.; Vovk, N. R.; Khadzhai, G. Ya.; Goulatis, I. L.; Chroneos, A.

2014-07-01

The electrical resistivity in the ab-plane of the Y1-yPryВа2Сu3О7-δ single crystals with high degree of perfection in the interval of Тc - 300 K was investigated. The increasing of praseodymium content leads to the reduction of the critical temperature (Tc) from 92 to 30 K. The experimental results can be approximated by the expression, taking into account the scattering of electrons by phonons, defects, the fluctuation conductivity in the 3D Aslamazov-Larkin model, as well as the transition to a "semiconductor" type behavior of the resistivity at the high praseodymium concentrations. The concentration dependences of all fitting parameters indicate a structural transition in the region 0.35≤у≤0.43. In particular, the Debye temperature changes in this range from 350 to 550 K, and the transverse coherence length passes through a maximum ξС(0)≈5 Å. The concentration dependence of the critical temperature testifies the d-pairing of the BCS model.

Annealing effect on the structural and dielectric properties of hematite nanoparticles

NASA Astrophysics Data System (ADS)

Kumar, Vijay; Chahal, Surjeet; Singh, Dharamvir; Kumar, Ashok; Kumar, Parmod; Asokan, K.

2018-05-01

In the present work, we have synthesized hematite (α-Fe2O3) nanoparticles by sol-gel method and sintered them at different temperatures (200 °C, 400 °C and 800 °C for six hours). The samples were then characterized using versatile characterization techniques such as X-ray diffraction (XRD), dielectric measurement and temperature dependent resistivity (RT) for their structural, dielectric and electrical properties. XRD measurements infer that intensity of peak increases with an increase in temperature resulting an increase in crystallite size. Temperature dependent resistivity also shows decrease in the resistivity of the samples. Furthermore, the dielectric measurements correspond to the increase in the dielectric constant. Based on these observations, it can be inferred that sintering temperature plays an important role in tailoring the various physical properties of hematite nanoparticles.

Low temperature synthesis and enhanced electrical properties by substitution of Al3+ and Cr3+ in Co-Ni nanoferrites

NASA Astrophysics Data System (ADS)

Pervaiz, Erum; Gul, I. H.

2013-10-01

Aluminum and chromium substituted Co-Ni spinel nanoferrites were prepared by sol-gel auto combustion method. Structural parameters along with electrical and magnetic properties have been investigated in the present work. Crystallite sizes of nano ferrite estimated from the peak (311) lies in the range of 13-21 nm ±2 nm and compared with crystallite sizes calculated from Williamsons-Hall plots. DC electrical resistivity variations due to the concentration of aluminum and chromium in the host ferrite have been measured from 368 K to 573 K. Increase in the room temperature DC electrical resistivity was observed up to a concentration x=0.2 and then decreases for x >0.2. Dielectric parameters (real and imaginary part of complex permittivity, dielectric loss tangent) were studied as a function of frequency (20 Hz-5 MHz) and a decrease in the dielectric parameters was observed due to substitution of nickel, aluminum and chromium ions in cobalt nanoferrites. AC conductivity, complex impedance and complex electrical modulus were studied as a function of frequency for the conduction and relaxation mechanisms in the present ferrite system. Saturation magnetization, coercivity, canting angles and magneto crystalline anisotropy variations with composition were observed and presented for the present ferrites under an applied magnetic field of 10 kOe at room temperature. It was found that both magnetization and coercivity decreases with increase in the concentration of aluminum and chromium along with a decrease in the anisotropy parameters. High DC resistivity with low dielectric parameters of the present nanoferrites make them suitable for high frequency and electromagnetic wave absorbing devices. High purity mixed Co-Ni-Al-Cr nanoferrites have been prepared by sol-gel auto combustion method. DC electrical resistivity increases due to substitution of Al3+ and Cr3+. Complex permittivity decrease for Co-Ni-Al-Cr nanoferrites. Detailed AC response analysis has been presented for mixed Co-Ni-Al-Cr nanoferrites. Magnetization and coercively reduces for Al3+ and Cr3+ doped Co-Ni ferrite nanoparticles showing that material is becoming soft magnetic.

Demonstration of Combined Zero-Valent Iron and Electrical Resistance Heating for In Situ Trichloroethene Remediation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Truex, Michael J.; Macbeth, Tamzen; Vermeul, Vincent R.

The effectiveness of in situ treatment using zero-valent iron to remediate sites with non-aqueous phase or significant sediment-associated contaminant mass can be limited by relatively low rates of mass transfer to bring contaminants in contact with the reactive media. For a field test in a trichloroethene source area, combining moderate-temperature (maximum 50oC) subsurface electrical resistance heating with in situ ZVI treatment was shown to accelerate dechlorination and dissolution rates by a factor of 4 to 6 based on organic daughter products and a factor 8-16 using a chloride concentrations. A mass-discharge-based analysis was used to evaluate reaction, dissolution, and volatilizationmore » at ambient groundwater temperature (~10oC) and as temperature was increased up to about 50oC. Increased reaction and contaminant dissolution were observed with increased temperature, but volatilization was minimal during the test because in situ reactions maintained low aqueous-phase TCE concentrations.« less

Hopping conduction in zirconium oxynitrides thin film deposited by reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Guo, Jie; Zhan, Guanghui; Liu, Jingquan; Yang, Bin; Xu, Bin; Feng, Jie; Chen, Xiang; Yang, Chunsheng

2015-10-01

Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150 K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros-Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7 meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer.

Measurement and simulation of thermoelectric efficiency for single leg

NASA Astrophysics Data System (ADS)

Hu, Xiaokai; Yamamoto, Atsushi; Ohta, Michihiro; Nishiate, Hirotaka

2015-04-01

Thermoelectric efficiency measurements were carried out on n-type bismuth telluride legs with the hot-side temperature at 100 and 150 °C. The electric power and heat flow were measured individually. Water coolant was utilized to maintain the cold-side temperature and to measure heat flow out of the cold side. Leg length and vacuum pressure were studied in terms of temperature difference across the leg, open-circuit voltage, internal resistance, and heat flow. Finite-element simulation on thermoelectric generation was performed in COMSOL Multiphysics, by inputting two-side temperatures and thermoelectric material properties. The open-circuit voltage and resistance were in good agreement between the measurement and simulation. Much larger heat flows were found in measurements, since they were comprised of conductive, convective, and radiative contributions. Parasitic heat flow was measured in the absence of bismuth telluride leg, and the conductive heat flow was then available. Finally, the maximum thermoelectric efficiency was derived in accordance with the electric power and the conductive heat flow.

Magnetic field effect on the electrical resistivity of Y1-xNixBa2Cu3O7-δ superconductor

NASA Astrophysics Data System (ADS)

Hadi-Sichani, Behnaz; Shakeripour, Hamideh; Salamati, Hadi

2018-06-01

The Ni- substituted Y1-xNixBa2Cu3O7-δ high temperature superconducting samples with 0 ≤ x < 0.01 were synthesized by the standard solid-state reaction. The temperature dependent resistivity of the samples was measured under magnetic fields in the range of zero to 1 Tesla, applied perpendicular to the current direction. To study of magnetoresistance is one of the most important ways to investigate the intergranular nature of superconducting materials. The resistive transition is made of two parts. The first- unaffected to applied magnetic field part which is near the onset of superconductivity. This region is due to superconductivity in grains. The second- broaden tail part which is due to the connectivity of the grains. At temperatures close to Tc 0, (ρ = 0), under applied magnetic fields, weak links are affected and the vortices are penetrated and move inside the intergranular and then the tail part is broaden. This broadening part observed in the electrical resistivity, ρ(T), and in the derivative of the electrical resistivity, dρ/dT, becomes too small or even absent in Ni doped samples. For pure sample, Tc 0 was around 90 K; by applying a magnetic field H = 0.3 T it shifted to 40 K. This broadening is 91.4 K to 80 K for x = 0.002 and 91.7 K to 85 K for x = 0.004 samples. We found an optimal value of Ni doping concentration which improves the coupling of the grains. Then, vortices get strongly pinned. These observations suggest that the Ni substitution can reduce the weak links and increase the Jc values of these superconductors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bichevoi, V.G.; Kosolapova, M.M.; Kuchma, A.Ya.

The authors investigate the influence of thermal annealing in a constant electric field and also of the addition of TiO/sub 2/ to the initial material on the electrophysical properties (volt-Ampere characteristics and temperature dependence of resistance) of VK 94-1 ceramic. The kinetic characteristics of ceramic VK 94-1 are shown, as are the volt-ampere characteristics of unannealed ceramic VK 94-1. The temperature dependences of volumetric specific resistance of ceramic 94-1 both with and without TiO/sub 2/ are given.

A Comparison of Methods for Computing the Residual Resistivity Ratio of High-Purity Niobium

PubMed Central

Splett, J. D.; Vecchia, D. F.; Goodrich, L. F.

2011-01-01

We compare methods for estimating the residual resistivity ratio (RRR) of high-purity niobium and investigate the effects of using different functional models. RRR is typically defined as the ratio of the electrical resistances measured at 273 K (the ice point) and 4.2 K (the boiling point of helium at standard atmospheric pressure). However, pure niobium is superconducting below about 9.3 K, so the low-temperature resistance is defined as the normal-state (i.e., non-superconducting state) resistance extrapolated to 4.2 K and zero magnetic field. Thus, the estimated value of RRR depends significantly on the model used for extrapolation. We examine three models for extrapolation based on temperature versus resistance, two models for extrapolation based on magnetic field versus resistance, and a new model based on the Kohler relationship that can be applied to combined temperature and field data. We also investigate the possibility of re-defining RRR so that the quantity is not dependent on extrapolation. PMID:26989580

Electrically Variable Resistive Memory Devices

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Nai-Juan; Ignatiev, Alex; Charlson, E. J.

2010-01-01

Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

Thermal treatment of low permeability soils using electrical resistance heating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Udell, K.S.

1996-08-01

The acceleration of recovery rates of second phase liquid contaminants from the subsurface during gas or water pumping operations is realized by increasing the soil and ground water temperature. Electrical heating with AC current is one method of increasing the soil and groundwater temperature and has particular applicability to low permeability soils. Several mechanisms have been identified that account for the enhanced removal of the contaminants during electrical heating. These are vaporization of liquid contaminants with low boiling points, temperature-enhanced evaporation rates of semi-volatile components, and removal of residual contaminants by the boiling of residual water. Field scale studies ofmore » electrical heating and fluid extraction show the effectiveness of this technique and its applicability to contaminants found both above and below the water table and within low permeability soils. 10 refs., 8 figs.« less

Prediction of energy balance and utilization for solar electric cars

NASA Astrophysics Data System (ADS)

Cheng, K.; Guo, L. M.; Wang, Y. K.; Zafar, M. T.

2017-11-01

Solar irradiation and ambient temperature are characterized by region, season and time-domain, which directly affects the performance of solar energy based car system. In this paper, the model of solar electric cars used was based in Xi’an. Firstly, the meteorological data are modelled to simulate the change of solar irradiation and ambient temperature, and then the temperature change of solar cell is calculated using the thermal equilibrium relation. The above work is based on the driving resistance and solar cell power generation model, which is simulated under the varying radiation conditions in a day. The daily power generation and solar electric car cruise mileage can be predicted by calculating solar cell efficiency and power. The above theoretical approach and research results can be used in the future for solar electric car program design and optimization for the future developments.

Metallic conductivity and air stability in copper chloride intercalated carbon fibers

NASA Astrophysics Data System (ADS)

Oshima, H.; Woollam, J. A.; Yavrouian, A.

1982-12-01

Carbon-copper chloride intercalation compounds have been obtained by using variously graphitized carbon fibers as host materials. The resultant conductors are air stable, thermally stable to 450 K, have electrical resistivities as low as 12.9 microohm cm at room temperature, and have metallic conductivity temperature dependencies. These intercalated fibers have tensile strengths of 160000 psi, and Young's moduli of 25 x 10 to the 6th psi. For aerospace use, 1/(resistivity x density) is a figure of merit. On this basis, a reduction in resistivity by a factor of two will make this conductor competitive with copper.

Giant reversible anisotropy changes at room temperature in a (La,Sr)MnO3/Pb(Mg,Nb,Ti)O3 magneto-electric heterostructure

PubMed Central

Chopdekar, Rajesh Vilas; Buzzi, Michele; Jenkins, Catherine; Arenholz, Elke; Nolting, Frithjof; Takamura, Yayoi

2016-01-01

In a model artificial multiferroic system consisting of a (011)-oriented ferroelectric Pb(Mg,Nb,Ti)O3 substrate intimately coupled to an epitaxial ferromagnetic (La,Sr)MnO3 film, electric field pulse sequences of less than 6 kV/cm induce large, reversible, and bistable remanent strains. The magnetic anisotropy symmetry reversibly switches from a highly anisotropic two-fold state to a more isotropic one, with concomitant changes in resistivity. Anisotropy changes at the scale of a single ferromagnetic domain were measured using X-ray microscopy, with electric-field dependent magnetic domain reversal showing that the energy barrier for magnetization reversal is drastically lowered. Free energy calculations confirm this barrier lowering by up to 70% due to the anisotropic strain changes generated by the substrate. Thus, we demonstrate that an electric field pulse can be used to ‘set’ and ‘reset’ the magnetic anisotropy orientation and resistive state in the film, as well as to lower the magnetization reversal barrier, showing a promising route towards electric-field manipulation of multifunctional nanostructures at room temperature. PMID:27271984

Giant reversible anisotropy changes at room temperature in a (La,Sr)MnO 3/Pb(Mg,Nb,Ti)O 3 magneto-electric heterostructure

DOE PAGES

Chopdekar, Rajesh Vilas; Buzzi, Michele; Jenkins, Catherine; ...

2016-06-08

In a model artificial multiferroic system consisting of a (011)-oriented ferroelectric Pb(Mg,Nb,Ti)O 3 substrate intimately coupled to an epitaxial ferromagnetic (La,Sr)MnO 3 film, electric field pulse sequences of less than 6 kV/cm induce large, reversible, and bistable remanent strains. The magnetic anisotropy symmetry reversibly switches from a highly anisotropic two-fold state to a more isotropic one, with concomitant changes in resistivity. Anisotropy changes at the scale of a single ferromagnetic domain were measured using X-ray microscopy, with electric-field dependent magnetic domain reversal showing that the energy barrier for magnetization reversal is drastically lowered. Free energy calculations confirm this barrier loweringmore » by up to 70% due to the anisotropic strain changes generated by the substrate. Thus, we demonstrate that an electric field pulse can be used to 'set' and 'reset' the magnetic anisotropy orientation and resistive state in the film, as well as to lower the magnetization reversal barrier, showing a promising route towards electric-field manipulation of multifunctional nanostructures at room temperature.« less

Effect of Mn2+ doping on structural, electrical transport and dielectric properties of CoFe2O4 nanoparticles

NASA Astrophysics Data System (ADS)

Ansari, Mohd Mohsin Nizam; Khan, Shakeel; Bhargava, Richa; Ahmad, Naseem

2018-05-01

Manganese substituted cobalt ferrites, Co1-xMnxFe2O4 (0.0, 0.1, 0.2, 0.3 and 0.4) were successfully synthesized by sol-gel method. XRD analysis confirmed the formation of a single-phase cubic spinel structures having Fd-3m space group and crystallite size is found to be in the range of 12.9 - 15.5 nm. The lattice parameter increased from 8.4109 Å to 8.4531 Å with increasing Mn2+ ion doping. Dielectric constant (ɛ'), dielectric loss (tanδ) and ac conductivity (σac) were analyzed at room temperature as a function of frequency (42 Hz to 5 MHz) and the behavior is explained on the basis of Maxwell-Wagner interfacial polarization. DC electrical resistivity measurements were carried out by two-probe method. DC electrical resistivity decreases with increase in temperature confirms the semiconducting nature of the samples. Impedance spectroscopy method has been used to understand the conduction mechanism and the effect of grains and grain boundary on the electrical properties of the materials.

An improved electrical and thermal model of a microbolometer for electronic circuit simulation

NASA Astrophysics Data System (ADS)

Würfel, D.; Vogt, H.

2012-09-01

The need for uncooled infrared focal plane arrays (IRFPA) for imaging systems has increased since the beginning of the nineties. Examples for the application of IRFPAs are thermography, pedestrian detection for automotives, fire fighting, and infrared spectroscopy. It is very important to have a correct electro-optical model for the simulation of the microbolometer during the development of the readout integrated circuit (ROIC) used for IRFPAs. The microbolometer as the sensing element absorbs infrared radiation which leads to a change of its temperature due to a very good thermal insulation. In conjunction with a high temperature coefficient of resistance (TCR) of the sensing material (typical vanadium oxide or amorphous silicon) this temperature change results in a change of the electrical resistance. During readout, electrical power is dissipated in the microbolometer, which increases the temperature continuously. The standard model for the electro-optical simulation of a microbolometer includes the radiation emitted by an observed blackbody, radiation emitted by the substrate, radiation emitted by the microbolometer itself to the surrounding, a heat loss through the legs which connect the microbolometer electrically and mechanically to the substrate, and the electrical power dissipation during readout of the microbolometer (Wood, 1997). The improved model presented in this paper takes a closer look on additional radiation effects in a real IR camera system, for example the radiation emitted by the casing and the lens. The proposed model will consider that some parts of the radiation that is reflected from the casing and the substrate is also absorbed by the microbolometer. Finally, the proposed model will include that some fraction of the radiation is transmitted through the microbolometer at first and then absorbed after the reflection at the surface of the substrate. Compared to the standard model temperature and resistance of the microbolometer can be modelled more realistically when these higher order effects are taken into account. A Verilog-A model for electronic circuit simulations is developed based on the improved thermal model of the microbolometer. Finally, a simulation result of a simple circuit is presented.

Ba doped Fe3O4 nanocrystals: Magnetic field and temperature tuning dielectric and electrical transport

NASA Astrophysics Data System (ADS)

Dutta, Papia; Mandal, S. K.; Nath, A.

2018-05-01

Nanocrystalline BaFe2O4 has been prepared through low temperature pyrophoric reaction method. The structural, dielectric and electrical transport properties of BaFe2O4 are investigated in detail. AC electrical properties have been studied over the wide range of frequencies with applied dc magnetic fields and temperatures. The value of impedance is found to increase with increase in magnetic field attributing the magnetostriction property of the sample. The observed value of magneto-impedance and magnetodielectric is found to ∼32% and ∼33% at room temperature. Nyquist plots have been fitted using resistance-capacitor circuits at different magnetic fields and temperatures showing the dominant role of grain and grain boundaries of the sample. Metal-semiconductor transition ∼403 K has been discussed in terms of delocalized and localized charge carrier.We have estimated activation energy using Arrhenius relation indicating temperature dependent electrical relaxation process in the system. Ac conductivity follow a Jonscher’s single power law indicating the large and small polaronic hopping conduction mechanism in the system.

Transport Properties and Magnetoresistance of La0.8Ca0.13Ag0.07MnO3 Perovskite Manganite Synthesized by Sol-Gel Method

NASA Astrophysics Data System (ADS)

Kurniawan, B.; Ruli, F.; Imaduddin, A.; Kamila, R.

2018-05-01

In this paper, we investigate the transport properties and magnetoresistance effect of La0.8Ca0.13Ag0.07MnO3 perovskite manganite synthesized by sol-gel method. The XRD pattern of the sample shows a rhombohedral perovskite structure with space group R3¯c. The EDX analysis confirms that the sample contains all expected chemical elements without any additional impurity. The temperature dependence of electrical resistivity was measured using a cryogenic magnetometer. The results show a metal-insulator transition temperature (TM-I ) at 280 K. The resistivity of the sample increases with an increase of temperature below TM-I . Theoretical analyses of the temperature dependence of resistivity suggest that the resistivity due to electron-electron scattering is predominant below TI-M. The resistivity of the sample decreases when applied magnetic field 1 T at a temperature range of 10 K to 300 K. The magnetoresistance of La0.8Ca0.13Ag0.07MnO3 emanates from spin-polarized tunneling process at the grain boundary.

Reliability Assessment of Advanced Flip-clip Interconnect Electronic Package Assemblies under Extreme Cold Temperatures (-190 and -120 C)

NASA Technical Reports Server (NTRS)

Ramesham, Rajeshuni; Ghaffarian, Reza; Shapiro, Andrew; Napala, Phil A.; Martin, Patrick A.

2005-01-01

Flip-chip interconnect electronic package boards have been assembled, underfilled, non-destructively evaluated and subsequently subjected to extreme temperature thermal cycling to assess the reliability of this advanced packaging interconnect technology for future deep space, long-term, extreme temperature missions. In this very preliminary study, the employed temperature range covers military specifications (-55 C to 100 C), extreme cold Martian (-120 C to 115 C) and asteroid Nereus (-180 C to 25 C) environments. The resistance of daisy-chained, flip-chip interconnects were measured at room temperature and at various intervals as a function of extreme temperature thermal cycling. Electrical resistance measurements are reported and the tests to date have not shown significant change in resistance as a function of extreme temperature thermal cycling. However, the change in interconnect resistance becomes more noticeable with increasing number of thermal cycles. Further research work has been carried out to understand the reliability of flip-chip interconnect packages under extreme temperature applications (-190 C to 85 C) via continuously monitoring the daisy chain resistance. Adaptation of suitable diagnostic techniques to identify the failure mechanisms is in progress. This presentation will describe the experimental test results of flip-chip testing under extreme temperatures.

Ultra-High Temperature ContinuousReactors based on Electro-thermal FluidizedBed Concept

DOE PAGES

Fedorov, Sergiy S.; Rohatgi, Upendra Singh; Barsukov, Igor V.; ...

2015-12-08

This paper presents the results of research and development in high-temperature (i.e. 2,000- 3,000ºС) continuous furnaces operating on the principle of electro-thermal fluidized bed for the purification of recycled, finely sized carbon materials. The basis of this fluidized bed furnace is specific electrical resistance and a new correlation has been developed to predict specific electrical resistance for the natural graphite-based precursors entering the fluidized bed reactor This correlation has been validated with the data from a fully functional pilot furnace whose throughput capacity is 10 kg per hour built as part of this work. Data collected in the course ofmore » graphite refining experiments demonstrated that difference between the calculated and measured values of specific electrical resistance of fluidized bed does not exceed 25%. It was concluded that due to chaotic nature of electro-thermal fluidized bed reactors this discrepancy is acceptable. The fluid mechanics of the three types of operating regimes, have been described. The numerical relationships obtained as part of this work allowed proposing an algorithm for selection of technological operational modes with large- scale high-temperature furnaces rated for throughputs of several tons of product per hour. Optimizations proposed now allow producing natural graphite-based end product with the purity level of 99.98+ wt%C which is the key passing criteria for applications in the advanced battery markets.« less

Magnesium and Manganese Silicides For Efficient And Low Cost Thermo-Electric Power Generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trivedi, Sudhir B.; Kutcher, Susan W.; Rosemeier, Cory A.

2013-12-02

Thermoelectric Power Generation (TEPG) is the most efficient and commercially deployable power generation technology for harvesting wasted heat from such things as automobile exhausts, industrial furnaces, and incinerators, and converting it into usable electrical power. We investigated the materials magnesium silicide (Mg2Si) and manganese silicide (MnSi) for TEG. MgSi2 and MnSi are environmentally friendly, have constituent elements that are abundant in the earth's crust, non-toxic, lighter and cheaper. In Phase I, we successfully produced Mg2Si and MnSi material with good TE properties. We developed a novel technique to synthesize Mg2Si with good crystalline quality, which is normally very difficult duemore » to high Mg vapor pressure and its corrosive nature. We produced n-type Mg2Si and p-type MnSi nanocomposite pellets using FAST. Measurements of resistivity and voltage under a temperature gradient indicated a Seebeck coefficient of roughly 120 V/K on average per leg, which is quite respectable. Results indicated however, that issues related to bonding resulted in high resistivity contacts. Determining a bonding process and bonding material that can provide ohmic contact from room temperature to the operating temperature is an essential part of successful device fabrication. Work continues in the development of a process for reproducibly obtaining low resistance electrical contacts.« less

Magnetoresistances and magnetic entropy changes associated with negative lattice expansions in NaZn13-type compounds LaFeCoSi

NASA Astrophysics Data System (ADS)

Hu, Feng-Xia; Qian, Xiao-Ling; Wang, Guang-Jun; Sun, Ji-Rong; Shen, Bao-Gen; Cheng, Zhao-Hua; Gao, Ju

2005-11-01

Magnetoresistances and magnetic entropy changes in NaZn13-type compounds La(Fe1-xCox)11.9Si1.1 (x=0.04, 0.06 and 0.08) with Curie temperatures of 243 K, 274 K and 301 K, respectively, are studied. The ferromagnetic ordering is accompanied by a negative lattice expansion. Large magnetic entropy changes in a wide temperature range from ~230 K to ~320 K are achieved. Raising Co content increases the Curie temperature but weakens the magnetovolume effect, thereby causing a decrease in magnetic entropy change. These materials exhibit a metallic character below TC, whereas the electrical resistance decreases abruptly and then recovers the metal-like behaviour above TC. Application of a magnetic field retains the transitions via increasing the ferromagnetic ordering temperature. An isothermal increase in magnetic field leads to an increase in electrical resistance at temperatures near but above TC, which is a consequence of the field-induced metamagnetic transition from a paramagnetic state to a ferromagnetic state.

Zn-site Substitution Effect in YbCo2Zn20

NASA Astrophysics Data System (ADS)

Kobayashi, Riki; Takamura, Haruki; Higa, Yasuyuki; Ikeda, Yoichi; Matsubayashi, Kazuyuki; Uwatoko, Yoshiya; Yoshizawa, Hideki; Aso, Naofumi

2017-04-01

We have investigated the substitution effect of YbCo2(Zn1-xTx)20 (T = Cu, Ga, and Cd) systems by using the experiments of X-ray powder diffraction (XRPD), specific heat, magnetic susceptibility, magnetization, and electrical resistivity in order to find out a material that approaches a quantum critical point by chemical pressure. The XRPD and electrical resistivity measurements clarify that the Cu-substitution makes the lattice constants shrink and keeps the magnetic electrical resistivity high, while the Ga- and the Cd-substitution show opposite relation of the Cu-substitution. However, we could not detect clear substitution effect in the specific heat, magnetic susceptibility, and magnetization measurements of Cu-substitution system within our experiments. It is necessary that to study the Cu-substitution samples that have higher x value at lower temperature.

Geophysical constraints on the mantle structure of the Canadian Cordillera and North America Craton

NASA Astrophysics Data System (ADS)

Yu, T. C.; Currie, C. A.; Unsworth, M. J.

2017-12-01

In western Canada, geophysical data indicate that there is a pronounced contrast in mantle structure between the Canadian Cordillera (CC) and North America craton (NAC). The CC is characterized by lower mantle seismic velocity, higher surface heat flow, lower mantle electrical resistivity and lower effective elastic thickness. These observations are consistent with two distinct thermal regimes: the CC has hot and thin lithosphere, while the NAC lithosphere is cool and thick. The boundary between the CC and NAC coincides with the south-north trending Rocky Mountain Trench - Tintina Fault system. Earlier studies have hypothesized that the thin CC lithosphere is maintained by small-scale convection of hydrated mantle, whereas the NAC lithosphere is dry and resistant to thinning. Here, we test this hypothesis through a detailed examination of two independent data sets: (1) seismic shear-wave (Vs) tomography models and (2) magnetotelluric (MT) measurements of mantle electrical resistivity. We analyze tomography model NA07 at 50-250 km depth and create a mapping of Vs to temperature based on mantle composition (via Perple_X) and a correction for anelasticity. For the CC, the calculated temperature is relatively insensitive to mantle composition but strongly depends on the water content and anelastic correction. With a laboratory-based correction, the estimated temperature is 1150 °C at 100 km depth for wet mantle, compared to 1310 °C for dry mantle; no melt is predicted in either case. An empirical anelastic correction predicts a 115 °C hotter mantle and likely some melt. In contrast, composition is the main control on the calculated temperature for the NAC, especially at depths < 125 km. At 100 km depth, estimated temperatures are 690 °C for a pyrolite mantle and 760 °C for a dunite mantle. In the seismic analysis, there is a trade-off between temperature and water content for the CC; the observed velocities are consistent with a warm wet mantle and a hot dry mantle. To resolve this uncertainty, future work will analyze MT data, as electrical resistivity is sensitive to mantle temperature and hydration.

Electrical Characteristics CuFe2O4 Thick Film Ceramics Made with Different Screen Size Utiizing Fe2O3 Nanopowder Derived from Yarosite for NTC Thermistor

NASA Astrophysics Data System (ADS)

Wiendartun, Syarif, Dani Gustaman

2010-10-01

Fabrication of CuFe2O4 thick film ceramics utilizing Fe2O3 derived from yarosite using screen printing technique for NTC thermistor has been carried out. Effect of thickness variation due to different size of screen (screen 225; 300 and 375 mesh) has been studied. X-ray diffraction analyses (XRD) was done to know crystal structure and phases formation. SEM analyses was carried out to know microstructure of the films. Electrical properties characterization was done through measurement of electrical resistance at various temperatures (room temperature to 100° C). The XRD data showed that the films crystalize in tetragonal spinel. The SEM images showed that the screen with the smaller of the hole size, made the grain size was bigger. Electrical data showed that the larger the screen different size thickness variation (mesh), the larger the resistance, thermistor constant and sensitivity. From the electrical characteristics data, it was known that the electrical characteristics of the CuFe2O4 thick film ceramics followed the NTC characteristic. The value of B and RRT of the produced CuFe2O4 ceramics namely B = 3241-3484 K and RRT = 25.6-87.0 M Ohm, fitted market requirement.

Fundamental Thermal and Mechanical Properties of Boride Ceramics

DTIC Science & Technology

2014-02-28

Zr ,Y)B2 ( Zr ,Hf)B2 ( Zr ,Ti)B2 ZrB2 El ec tri ca l R es is tiv ity (µ Ω -c m ) Temperature (°C) Figure 17. Electrical resistivity as a function...family as Zr , namely Ti and Hf, had minimal effect on thermal conductivity, while others such as Nb , Ta, and W had an increasing impact based on their...diffusivity (α), heat capacity (Cp) from the NIST-JANAF tables, and bulk density (ρ) using Equation 6. (5) (6) Electrical resistivity

Studies of electrical properties of low-resistivity sandstones based on digital rock technology

NASA Astrophysics Data System (ADS)

Yan, Weichao; Sun, Jianmeng; Zhang, Jinyan; Yuan, Weiguo; Zhang, Li; Cui, Likai; Dong, Huaimin

2018-02-01

Electrical properties are important parameters to quantitatively calculate water saturation in oil and gas reservoirs by well logging interpretation. It is usual that oil layers show high resistivity responses, while water layers show low-resistivity responses. However, there are low-resistivity oil zones that exist in many oilfields around the world, leading to difficulties for reservoir evaluation. In our research, we used digital rock technology to study different internal and external factors to account for low rock resistivity responses in oil layers. We first constructed three-dimensional digital rock models with five components based on micro-computed tomography technology and x-ray diffraction experimental results, and then oil and water distributions in pores were determined by the pore morphology method. When the resistivity of each component was assigned, rock resistivities were calculated by using the finite element method. We collected 20 sandstone samples to prove the effectiveness of our numerical simulation methods. Based on the control variate method, we studied the effects of different factors on the resistivity indexes and rock resistivities. After sensitivity analyses, we found the main factors which caused low rock resistivities in oil layers. For unfractured rocks, influential factors arranged in descending order of importance were porosity, clay content, temperature, water salinity, heavy mineral, clay type and wettability. In addition, we found that the resistivity index could not provide enough information to identify a low-resistivity oil zone by using laboratory rock-electric experimental results. These results can not only expand our understandings of the electrical properties of low-resistivity rocks from oil layers, but also help identify low-resistivity oil zones better.

Electrical Resistivity Measurement of Cu and Zn on the Pressure-Dependent Melting Boundary

NASA Astrophysics Data System (ADS)

Secco, R. A.; Ezenwa, I.; Yong, W.

2016-12-01

Understanding how the core cools through heat conduction and modelling the geodynamo requires knowledge of the thermal and electrical conductivity of solid and liquid Fe and its relevant alloys at high pressures. It has been proposed that electrical resistivity of a pure metal is constant along its P-dependent melting boundary (Stacey and Anderson, PEPI, 2001). If confirmed, this invariant behavior could serve as a practical tool for low P studies to assess electrical resistivity of Earth's core. Since Earth's inner core boundary (ICB) is a melting boundary of mainly Fe, measurements of electrical resistivity of Fe at the melting boundary, under any P, would serve as a proxy for the resistivity at the ICB. A revised treatment (Stacey and Loper, PEPI, 2007) accounted for s-d scattering in transition metals with unfilled d-bands and limited the proposal to metals with electrons of the same type in filled d-band metals. To test this proposal, we made high P, T measurements of electrical resistivity of d-band filled Cu and Zn in solid and liquid states. Experiments were carried out in a 1000 ton cubic anvil press up to 5 GPa and 300K above melting temperatures. Two thermocouples placed at opposite ends of the wire sample served as T probes as well as 4-wire resistance electrodes in a switched circuit. A polarity switch was used to remove any bias voltage measurement using thermocouple legs. Electron microprobe analyses were used to check the compositions of the recovered samples. The expected resistivity decrease with P and increase with T were found and comparisons with 1atm data are in very good agreement. Within the error of measurement, the resistivity values of Cu decrease along the melting boundary while Zn appears to support the hypothesis of constant resistivity along the melting boundary.

An electrical-heating and self-sensing shape memory polymer composite incorporated with carbon fiber felt

NASA Astrophysics Data System (ADS)

Gong, Xiaobo; Liu, Liwu; Liu, Yanju; Leng, Jinsong

2016-03-01

Shape memory polymers (SMPs) have the ability to adjust their stiffness, lock a temporary shape, and recover the permanent shape upon imposing an appropriate stimulus. They have found their way into the field of morphing structures. The electrically Joule resistive heating of the conductive composite can be a desirable stimulus to activate the shape memory effect of SMPs without external heating equipment. Electro-induced SMP composites incorporated with carbon fiber felt (CFF) were explored in this work. The CFF is an excellent conductive filler which can easily spread throughout the composite. It has a huge advantage in terms of low cost, simple manufacturing process, and uniform and tunable temperature distribution while heating. A continuous and compact conductive network made of carbon fibers and the overlap joints among them was observed from the microscopy images, and this network contributes to the high conductive properties of the CFF/SMP composites. The CFF/SMP composites can be electrical-heated rapidly and uniformly, and its’ shape recovery effect can be actuated by the electrical resistance Joule heating of the CFF without an external heater. The CFF/SMP composite get higher modulus and higher strength than the pure SMP without losing any strain recovery property. The high dependence of temperature and strain on the electrical resistance also make the composite a good self-sensing material. In general, the CFF/SMP composite shows great prospects as a potential material for the future morphing structures.

Electrically tunable transport and high-frequency dynamics in antiferromagnetic S r3I r2O7

NASA Astrophysics Data System (ADS)

Seinige, Heidi; Williamson, Morgan; Shen, Shida; Wang, Cheng; Cao, Gang; Zhou, Jianshi; Goodenough, John B.; Tsoi, Maxim

2016-12-01

We report dc and high-frequency transport properties of antiferromagnetic S r3I r2O7 . Temperature-dependent resistivity measurements show that the activation energy of this material can be tuned by an applied dc electrical bias. The latter allows for continuous variations in the sample resistivity of as much as 50% followed by a reversible resistive switching at higher biases. Such a switching is of high interest for antiferromagnetic applications in high-speed memory devices. Interestingly, we found the switching behavior to be strongly affected by a high-frequency (microwave) current applied to the sample. The microwaves at 3-7 GHz suppress the dc switching and produce resonancelike features that we tentatively associated with the dissipationless magnonics recently predicted to occur in antiferromagnetic insulators subject to ac electric fields. We have characterized the effects of microwave irradiation on electronic transport in S r3I r2O7 as a function of microwave frequency and power, strength and direction of external magnetic field, strength and polarity of applied dc bias, and temperature. Our observations support the potential of antiferromagnetic materials for high-speed/high-frequency spintronic applications.

Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance

NASA Astrophysics Data System (ADS)

Longtin, Rémi; Sanchez-Valencia, Juan Ramon; Shorubalko, Ivan; Furrer, Roman; Hack, Erwin; Elsener, Hansrudolf; Gröning, Oliver; Greenwood, Paul; Rupesinghe, Nalin; Teo, Kenneth; Leinenbach, Christian; Gröning, Pierangelo

2015-02-01

The joining of macroscopic films of vertically aligned multiwalled carbon nanotubes (CNTs) to titanium substrates is demonstrated by active vacuum brazing at 820 °C with a Ag-Cu-Ti alloy and at 880 °C with a Cu-Sn-Ti-Zr alloy. The brazing methodology was elaborated in order to enable the production of highly electrically and thermally conductive CNT/metal substrate contacts. The interfacial electrical resistances of the joints were measured to be as low as 0.35 Ω. The improved interfacial transport properties in the brazed films lead to superior electron field-emission properties when compared to the as-grown films. An emission current of 150 μA was drawn from the brazed nanotubes at an applied electric field of 0.6 V μm-1. The improvement in electron field-emission is mainly attributed to the reduction of the contact resistance between the nanotubes and the substrate. The joints have high re-melting temperatures up to the solidus temperatures of the alloys; far greater than what is achievable with standard solders, thus expanding the application potential of CNT films to high-current and high-power applications where substantial frictional or resistive heating is expected.

Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance

PubMed Central

Longtin, Rémi; Ramon Sanchez-Valencia, Juan; Shorubalko, Ivan; Furrer, Roman; Hack, Erwin; Elsener, Hansrudolf; Gröning, Oliver; Greenwood, Paul; Rupesinghe, Nalin; Teo, Kenneth; Leinenbach, Christian; Gröning, Pierangelo

2015-01-01

The joining of macroscopic films of vertically aligned multiwalled carbon nanotubes (CNTs) to titanium substrates is demonstrated by active vacuum brazing at 820 °C with a Ag–Cu–Ti alloy and at 880 °C with a Cu–Sn–Ti–Zr alloy. The brazing methodology was elaborated in order to enable the production of highly electrically and thermally conductive CNT/metal substrate contacts. The interfacial electrical resistances of the joints were measured to be as low as 0.35 Ω. The improved interfacial transport properties in the brazed films lead to superior electron field-emission properties when compared to the as-grown films. An emission current of 150 μA was drawn from the brazed nanotubes at an applied electric field of 0.6 V μm−1. The improvement in electron field-emission is mainly attributed to the reduction of the contact resistance between the nanotubes and the substrate. The joints have high re-melting temperatures up to the solidus temperatures of the alloys; far greater than what is achievable with standard solders, thus expanding the application potential of CNT films to high-current and high-power applications where substantial frictional or resistive heating is expected. PMID:27877755

Electrical Properties of a p-n Heterojunction of Li-Doped NiO and Al-Doped ZnO for Thermoelectrics

NASA Astrophysics Data System (ADS)

Desissa, Temesgen D.; Schrade, Matthias; Norby, Truls

2018-06-01

The electrical properties of a p-n heterojunction of polycrystalline p-type Ni0.98Li0.02O and n-type Zn0.98Al0.02O have been investigated for potential applications in high-temperature oxide-based thermoelectric generators without metallic interconnects. Current-voltage characteristics of the junction were measured in a two-electrode setup in ambient air at 500-1000°C. The resistance and rectification of the junction decreased with increasing temperature. A non-ideal Shockley diode model was used to fit the measured current-voltage data in order to extract characteristic parameters of the junction, such as area-specific series resistance R s and parallel shunt resistance R p, non-ideality factor, and the saturation current density. R s and R p decreased exponentially with temperature, with activation energies of 0.4 ± 0.1 eV and 1.1 ± 0.2 eV, respectively. The interface resistance of the direct p-n junction studied here is as such too high for practical applications in thermoelectrics. However, it is demonstrated that it can be reduced by an order of magnitude by using a composite of the individual materials at the interface, yielding a large effective contact area.

Sensitive photo-thermal response of graphene oxide for mid-infrared detection

NASA Astrophysics Data System (ADS)

Bae, Jung Jun; Yoon, Jung Hyun; Jeong, Sooyeon; Moon, Byoung Hee; Han, Joong Tark; Jeong, Hee Jin; Lee, Geon-Woong; Hwang, Ha Ryong; Lee, Young Hee; Jeong, Seung Yol; Lim, Seong Chu

2015-09-01

This study characterizes the effects of incident infrared (IR) radiation on the electrical conductivity of graphene oxide (GO) and examines its potential for mid-IR detection. Analysis of the mildly reduced GO (m-GO) transport mechanism near room temperature reveals variable range hopping (VRH) for the conduction of electrons. This VRH behavior causes the m-GO resistance to exhibit a strong temperature dependence, with a large negative temperature coefficient of resistance of approximately -2 to -4% K-1. In addition to this hopping transport, the presence of various oxygen-related functional groups within GO enhances the absorption of IR radiation significantly. These two GO material properties are synergically coupled and provoke a remarkable photothermal effect within this material; specifically, a large resistance drop is exhibited by m-GO in response to the increase in temperature caused by the IR absorption. The m-GO bolometer effect identified in this study is different from that exhibited in vanadium oxides, which require added gold-black films that function as IR absorbers owing to their limited IR absorption capability.This study characterizes the effects of incident infrared (IR) radiation on the electrical conductivity of graphene oxide (GO) and examines its potential for mid-IR detection. Analysis of the mildly reduced GO (m-GO) transport mechanism near room temperature reveals variable range hopping (VRH) for the conduction of electrons. This VRH behavior causes the m-GO resistance to exhibit a strong temperature dependence, with a large negative temperature coefficient of resistance of approximately -2 to -4% K-1. In addition to this hopping transport, the presence of various oxygen-related functional groups within GO enhances the absorption of IR radiation significantly. These two GO material properties are synergically coupled and provoke a remarkable photothermal effect within this material; specifically, a large resistance drop is exhibited by m-GO in response to the increase in temperature caused by the IR absorption. The m-GO bolometer effect identified in this study is different from that exhibited in vanadium oxides, which require added gold-black films that function as IR absorbers owing to their limited IR absorption capability. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr04039f

Simplified and quick electrical modeling for dye sensitized solar cells: An experimental and theoretical investigation

NASA Astrophysics Data System (ADS)

de Andrade, Rocelito Lopes; de Oliveira, Matheus Costa; Kohlrausch, Emerson Cristofer; Santos, Marcos José Leite

2018-05-01

This work presents a new and simple method for determining IPH (current source dependent on luminance), I0 (reverse saturation current), n (ideality factor), RP and RS, (parallel and series resistance) to build an electrical model for dye sensitized solar cells (DSSCs). The electrical circuit parameters used in the simulation and to generate theoretical curves for the single diode electrical model were extracted from I-V curves of assembled DSSCs. Model validation was performed by assembling five different types of DSSCs and evaluating the following parameters: effect of a TiO2 blocking/adhesive layer, thickness of the TiO2 layer and the presence of a light scattering layer. In addition, irradiance, temperature, series and parallel resistance, ideality factor and reverse saturation current were simulated.

Growth and characterization of single crystal rocksalt LaAs using LuAs barrier layers

NASA Astrophysics Data System (ADS)

Krivoy, E. M.; Rahimi, S.; Nair, H. P.; Salas, R.; Maddox, S. J.; Ironside, D. J.; Jiang, Y.; Dasika, V. D.; Ferrer, D. A.; Kelp, G.; Shvets, G.; Akinwande, D.; Bank, S. R.

2012-11-01

We demonstrate the growth of high-quality, single crystal, rocksalt LaAs on III-V substrates; employing thin well-behaved LuAs barriers layers at the III-V/LaAs interfaces to suppress nucleation of other LaAs phases, interfacial reactions between GaAs and LaAs, and polycrystalline LaAs growth. This method enables growth of single crystal epitaxial rocksalt LaAs with enhanced structural and electrical properties. Temperature-dependent resistivity and optical reflectivity measurements suggest that epitaxial LaAs is semimetallic, consistent with bandstructure calculations in literature. LaAs exhibits distinct electrical and optical properties, as compared with previously reported rare-earth arsenide materials, with a room-temperature resistivity of ˜459 μΩ-cm and an optical transmission window >50% between ˜3-5 μm.

Saturation and negative temperature coefficient of electrical resistivity in liquid iron-sulfur alloys at high densities from first-principles calculations

NASA Astrophysics Data System (ADS)

Wagle, Fabian; Steinle-Neumann, Gerd; de Koker, Nico

2018-03-01

We report results on electronic transport properties of liquid Fe-S alloys at conditions of planetary cores, computed using first-principle techniques in the Kubo-Greenwood formalism. We describe a combined effect of resistivity saturation due to temperature, compression, and chemistry by comparing the electron mean free path from the Drude response of optical conductivity to the mean interatomic distance. At high compression and high sulfur concentration the Ioffe-Regel condition is satisfied, and the temperature coefficient of resistivity changes sign from positive to negative. We show that this happens due to a decrease in the d density of states at the Fermi level in response to thermal broadening.

Low-Heat-Leak Electrical Leads For Cryogenic Systems

NASA Technical Reports Server (NTRS)

Wise, Stephanie A.; Hooker, Matthew W.

1994-01-01

Electrical leads offering high electrical conductivity and low thermal conductivity developed for use in connecting electronic devices inside cryogenic systems to power supplies, signal-processing circuits, and other circuitry located in nearby warmer surroundings. Strip of superconductive leads on ceramic substrate, similar to ribbon cable, connects infrared detectors at temperature of liquid helium with warmer circuitry. Electrical leads bridging thermal gradient at boundary of cryogenic system designed both to minimize conduction of heat from surroundings through leads into system and to minimize resistive heating caused by electrical currents flowing in leads.

Development and characterization of PdCr temperature-compensated wire resistance strain gage

NASA Technical Reports Server (NTRS)

Lei, Jih-Fen

1989-01-01

A temperature-compensated resistance static strain gage with potential to be used to 600 C was recently developed. Gages were fabricated from specially developed palladium-13 w/o chromium (Pd-13Cr) wire and platinum (Pt) compensator. When bonded to high temperature Hastelloy X, the apparent strain from room temperature to 600 C was within 400 microstrain for gages with no preheat treatment and within 3500 microstrain for gages with 16 hours prestabilization at 640 C. The apparent strain versus temperature relationship of stabilized PdCr gages were repeatable with the reproducibility within 100 microstrain during three thermal cycles to 600 C and an 11 hours soak at 600 C. The gage fabrication, construction and installation is described. Also, the coating system used for this compensated resistance strain gage is explained. The electrical properties of the strain sensing element and main characteristics of the compensated gage including apparent strain, drift and reproducibility are discussed.

A portable borehole temperature logging system using the four-wire resistance method

NASA Astrophysics Data System (ADS)

Erkan, Kamil; Akkoyunlu, Bülent; Balkan, Elif; Tayanç, Mete

2017-12-01

High-quality temperature-depth information from boreholes with a depth of 100 m or more is used in geothermal studies and in studies of climate change. Electrical wireline tools with thermistor sensors are capable of measuring borehole temperatures with millikelvin resolution. The use of a surface readout mode allows analysis of the thermally conductive state of a borehole, which is especially important for climatic and regional heat flow studies. In this study we describe the design of a portable temperature logging tool that uses the four-wire resistance measurement method. The four-wire method enables the elimination of cable resistance effects, thus allowing millikelvin resolution of temperature data at depth. A preliminary two-wire model of the system is also described. The portability of the tool enables one to collect data from boreholes down to 300 m, even in locations with limited accessibility.

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO 3₋δ thin films and a method of stabilization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Enriquez, Erik M.; Chen, Aiping; Harrell, Zachary John

Epitaxial SrFeO 3-δ (SFO) thin films have been grown on various substrates by pulsed laser deposition. The structural and electrical properties of SFO thin films are monitored with time in different atmospheres at room temperature, showing time-dependent crystal structure and electrical conductivity. The increased out-of-plane lattice parameter and resistivity over time are associated with the increased oxygen vacancies density in SFO thin films. The epitaxial strain plays an important role in determining the initial resistivity, and the sample environment determines the trend of resistivity change over time. An amorphous Al 2O 3 passivation layer has been found to be effectivemore » in stabilizing the structure and electrical properties of SFO thin films. Lastly, this work explores time dependent structure and properties variation in oxide films and provides a way to stabilize thin film materials that are sensitive to oxygen vacancies.« less

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO 3₋δ thin films and a method of stabilization

DOE PAGES

Enriquez, Erik M.; Chen, Aiping; Harrell, Zachary John; ...

2016-10-03

Epitaxial SrFeO 3-δ (SFO) thin films have been grown on various substrates by pulsed laser deposition. The structural and electrical properties of SFO thin films are monitored with time in different atmospheres at room temperature, showing time-dependent crystal structure and electrical conductivity. The increased out-of-plane lattice parameter and resistivity over time are associated with the increased oxygen vacancies density in SFO thin films. The epitaxial strain plays an important role in determining the initial resistivity, and the sample environment determines the trend of resistivity change over time. An amorphous Al 2O 3 passivation layer has been found to be effectivemore » in stabilizing the structure and electrical properties of SFO thin films. Lastly, this work explores time dependent structure and properties variation in oxide films and provides a way to stabilize thin film materials that are sensitive to oxygen vacancies.« less

Evaluation of a Conductive Elastomer Seal for Spacecraft

NASA Technical Reports Server (NTRS)

Daniels, C. C.; Mather, J. L.; Oravec, H. A.; Dunlap, P. H., Jr.

2016-01-01

An electrically conductive elastomer was evaluated as a material candidate for a spacecraft seal. The elastomer used electrically conductive constituents as a means to reduce the resistance between mating interfaces of a sealed joint to meet spacecraft electrical bonding requirements. The compound's outgassing levels were compared against published NASA requirements. The compound was formed into a hollow O-ring seal and its compression set was measured. The O-ring seal was placed into an interface and the electrical resistance and leak rate were quantified. The amount of force required to fully compress the test article in the sealing interface and the force needed to separate the joint were also measured. The outgassing and resistance measurements were below the maximum allowable levels. The room temperature compression set and leak rates were fairly high when compared against other typical spacecraft seal materials, but were not excessive. The compression and adhesion forces were desirably low. Overall, the performance of the elastomer compound was sufficient to be considered for future spacecraft seal applications.

Revisit of pressure-induced phase transition in PbSe: Crystal structure, and thermoelastic and electrical properties

DOE PAGES

Wang, Shanmin; Zang, Chengpeng; Wang, Yongkun; ...

2015-05-04

Lead selenide, PbSe, an important lead chalcogenide semiconductor, has been investigated using in–situ high–pressure/high–temperature synchrotron x–ray diffraction and electrical resistivity measurements. For the first time, high–quality x-ray diffraction data were collected for the intermediate orthorhombic PbSe. Combined with ab initio calculations, we find a Cmcm, InI–type symmetry for the intermediate phase, which is structurally more favorable than the anti–GeS–type Pnma. At room temperature, the onset of the cubic–orthorhombic transition was observed at ~3.5 GPa with a ~3.4% volume reduction. At an elevated temperature of 1000 K, the reversed orthorhombic–to–cubic transition was observed at 6.12 GPa, indicating a positive Clapeyron slopemore » for the phase boundary. Interestingly, phase–transition induced elastic softening in PbSe was also observed, which can be mainly attributed to the loosely bonded trigonal prisms along the b–axis in the Cmcm structure. Compared with the cubic phase, orthorhombic PbSe exhibits a large negative pressure dependence of electrical resistivity. Additionally, thermoelastic properties of orthorhombic PbSe have been derived from isothermal compression data, such as temperature derivative of bulk modulus and thermally induced pressure.« less

Magnetic field and pressure dependant resistivity behaviour of MnAs

NASA Astrophysics Data System (ADS)

Satya, A. T.; Amaladass, E. P.; Mani, Awadhesh

2018-04-01

The studies on the effect of magnetic field and external pressure on temperature dependant electrical resistivity behaviour of polycrystalline MnAs have been reported. At ambient pressure, ρ(T) shows a first order magnetic transition associated with change in sign of the temperature coefficient of resistivity from positive in the ferromagnetic (FM) phase to negative in the paramagnetic (PM) phase. The magneto resistance is negative and shows a peak at the FM transition temperature (T C ). The first order hysteresis width decreases with increase in magnetic field and the intersection of extrapolated linear variations of T C with field for the cooling and warming cycles enabled determination of the tricritical point. At high pressures, ρ(T) displays non monotonic variation exhibiting a low temperature minimum ({T}\\min L) and a high temperature maximum ({T}\\max H) accompanying broad thermal hysteresis above {T}\\min L. It is surmised that spin disorder scattering is responsible for the resistivity behaviour above {T}\\min L and the essential features of ρ(T) are qualitatively explained using Kasuya theoretical model. Below the {T}\\min L, ρ(T) follows linear logarithmic temperature dependence similar to the effect occurring due to Kondo type of scattering of conduction electrons with localised moments.

Three-Dimensional Electrical Resistivity Tomography of the Solfatara Crater (Italy): Implication for the Multiphase Flow Structure of the Shallow Hydrothermal System

NASA Astrophysics Data System (ADS)

Gresse, Marceau; Vandemeulebrouck, Jean; Byrdina, Svetlana; Chiodini, Giovanni; Revil, André; Johnson, Timothy C.; Ricci, Tullio; Vilardo, Giuseppe; Mangiacapra, Annarita; Lebourg, Thomas; Grangeon, Jacques; Bascou, Pascale; Metral, Laurent

2017-11-01

The Solfatara volcano is the main degassing area of the Campi Flegrei caldera, characterized by 60 years of unrest. Assessing such renewal activity is a challenging task because hydrothermal interactions with magmatic gases remain poorly understood. In this study, we decipher the complex structure of the shallow Solfatara hydrothermal system by performing the first 3-D, high-resolution, electrical resistivity tomography of the volcano. The 3-D resistivity model was obtained from the inversion of 43,432 resistance measurements performed on an area of 0.68 km2. The proposed interpretation of the multiphase hydrothermal structures is based on the resistivity model, a high-resolution infrared surface temperature image, and 1,136 soil CO2 flux measurements. In addition, we realized 27 soil cation exchange capacity and pH measurements demonstrating a negligible contribution of surface conductivity to the shallow bulk electrical conductivity. Hence, we show that the resistivity changes are mainly controlled by fluid content and temperature. The high-resolution tomograms identify for the first time the structure of the gas-dominated reservoir at 60 m depth that feeds the Bocca Grande fumarole through a 10 m thick channel. In addition, the resistivity model reveals a channel-like conductive structure where the liquid produced by steam condensation around the main fumaroles flows down to the Fangaia area within a buried fault. The model delineates the emplacement of the main geological structures: Mount Olibano, Solfatara cryptodome, and tephra deposits. It also reveals the anatomy of the hydrothermal system, especially two liquid-dominated plumes, the Fangaia mud pool and the Pisciarelli fumarole, respectively.

Synchrotron X-ray Diffraction and High-Pressure Electrical Resistivity Studies for High-Tc Candidate Nd3.5Sm0.5Ni3O8

NASA Astrophysics Data System (ADS)

Uehara, Masatomo; Kobayashi, Kai; Yamamoto, Hiroki; Nakata, Akitoshi; Wakiya, Kazuhei; Umehara, Izuru; Gouchi, Jun; Uwatoko, Yoshiya

2017-11-01

Ln4Ni3O8 (Ln = La, Nd, Sm) has attracted much attention as a candidate for high-Tc superconductor due to its close structural and electrical similarities with high-Tc cuprates. However, Ln4Ni3O8 is not a superconductor and shows semiconducting behavior. Our recent work has revealed that Nd3.5Sm0.5Ni3O8 displays metallic behavior down to 20-40 K upon intercalation and subsequent deintercalation treatments with sulfur, followed by a weak semiconducting tendency at lower temperatures. A synchrotron X-ray diffraction experiment suggests that the structural change induced by sulfur treatment can be explained electrostatically by the removal of additional apical oxygen. High-pressure electrical resistivity measurements up to 8 GPa on a metallic sample show the enhancement of the semiconducting tendency at low temperatures, suggesting that the removal of additional apical oxygen is not totally completed under the present conditions of sulfur treatment.

Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majid, S. S., E-mail: suhailphy276@gmail.com; Rahman, F.; Shukla, D. K.

2015-06-24

We present here the structural and electrical properties of the thin films of V{sub 2}O{sub 3} (Vanadium sesquioxide) and V{sub 5}O{sub 9}. Both these oxide phases, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}, have beenachieved on (001) orientedSi substrate using the V{sub 2}O{sub 5} target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V{sub 2}O{sub 3} and V{sub 5}O{sub 9} phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulatormore » transitions (MIT) for both the films, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}.« less

The fabrication of highly conductive and flexible Ag patterning through baking Ag nanosphere-nanoplate hybrid ink at a low temperature of 100 °C

NASA Astrophysics Data System (ADS)

Han, Y. D.; Zhang, S. M.; Jing, H. Y.; Wei, J.; Bu, F. H.; Zhao, L.; Lv, X. Q.; Xu, L. Y.

2018-04-01

With the aim of developing highly conductive ink for flexible electronics on heat-sensitive substrates, Ag nanospheres and nanoplates were mixed to synthesize hybrid inks. Five kinds of hybrid ink and two types of pure ink were written to square shape on Epson photo paper using rollerball pens, and sintered at a low temperature (100 °C). The microstructure, electrical resistivity, surface porosity, hardness and flexibility of silver patterns were systematically investigated and compared. It was observed that the optimal mixing ratio of nanospheres and nanoplates was 1:1, which equipped the directly written pattern with excellent electrical and mechanical properties. The electrical resistivity was 0.103 μΩ · m, only 6.5 times that of bulk silver. The enhancement compared to pure silver nanospheres or nanoplates based ink was due to the combined action of nanospheres and nanoplates. This demonstrates a valuable way to prepare Ag nanoink with good performance for printed/written electronics.

Ion irradiation of AZO thin films for flexible electronics

NASA Astrophysics Data System (ADS)

Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana; Alberti, Alessandra; Mirabella, Salvatore; Ruffino, Francesco; Terrasi, Antonio

2017-02-01

Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30-350 keV, 3 × 1015-3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

The fabrication of highly conductive and flexible Ag patterning through baking Ag nanosphere-nanoplate hybrid ink at a low temperature of 100 °C.

PubMed

Han, Y D; Zhang, S M; Jing, H Y; Wei, J; Bu, F H; Zhao, L; Lv, X Q; Xu, L Y

2018-02-12

With the aim of developing highly conductive ink for flexible electronics on heat-sensitive substrates, Ag nanospheres and nanoplates were mixed to synthesize hybrid inks. Five kinds of hybrid ink and two types of pure ink were written to square shape on Epson photo paper using rollerball pens, and sintered at a low temperature (100 °C). The microstructure, electrical resistivity, surface porosity, hardness and flexibility of silver patterns were systematically investigated and compared. It was observed that the optimal mixing ratio of nanospheres and nanoplates was 1:1, which equipped the directly written pattern with excellent electrical and mechanical properties. The electrical resistivity was 0.103 μΩ · m, only 6.5 times that of bulk silver. The enhancement compared to pure silver nanospheres or nanoplates based ink was due to the combined action of nanospheres and nanoplates. This demonstrates a valuable way to prepare Ag nanoink with good performance for printed/written electronics.

Thermophysical Properties of GRCop-84

NASA Technical Reports Server (NTRS)

Ellis, David L.; Keller, Dennis J.; Nathal, Michael (Technical Monitor)

2000-01-01

The thermophysical properties and electrical resistivity of GRCop-84 (Cu - 8 at.% Cr-4 at.% Nb) were measured from cryogenic temperatures to near its melting point. The data were analyzed using weighted regression to determine the properties as a function of temperature and assign appropriate confidence intervals. The results showed that the thermal expansion of GRCop-84 was significantly lower than NARloy-Z (Cu-3 wt. % Ag-0.5 wt. % Zr), the currently used thrust cell liner material. The lower thermal expansion is expected to translate into lower thermally induced stresses and increases in thrust cell liner lives between 2X and 41X over NARloy-Z. The somewhat lower thermal conductivity of GRCop-84 can be offset by redesigning the liners to utilize its much greater mechanical properties. Optimized designs are not expected to suffer from the lower thermal conductivity. Electrical resistivity data, while not central to the primary application, show that GRCop-84 has potential for applications where a combination of good electrical conductivity and strength is required.

Synthesis and characterization of electrical conducting porous carbon structures based on resorcinol-formaldehyde

NASA Astrophysics Data System (ADS)

Najeh, I.; Ben Mansour, N.; Mbarki, M.; Houas, A.; Nogier, J. Ph.; El Mir, L.

2009-10-01

Electrical conducting carbon (ECC) porous structures were explored by changing the pyrolysis temperature of organic xerogel compounds prepared by sol-gel method from resorcinol-formaldehyde (RF) mixtures in acetone using picric acid as catalyst. The effect of this preparation parameter on the structural and electrical properties of the obtained ECCs was studied. The analysis of the obtained results revealed that the polymeric insulating xerogel phase was transformed progressively with pyrolysis temperature into carbon conducting phase; this means the formation of long continuous conducting path for charge carriers to move inside the structure with thermal treatment and the samples exhibited tangible percolation behaviour where the percolation threshold can be determined by pyrolysis temperature. The temperature-dependent conductivity of the obtained ECC structures shows a semi-conducting behaviour and the I( V) characteristics present a negative differential resistance. The results obtained from STM micrographs revealed that the obtained ECC structures consist of porous electrical conducting carbon materials.

Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.

PubMed

Lyu, Mengjie; Liu, Youwen; Zhi, Yuduo; Xiao, Chong; Gu, Bingchuan; Hua, Xuemin; Fan, Shaojuan; Lin, Yue; Bai, Wei; Tong, Wei; Zou, Youming; Pan, Bicai; Ye, Bangjiao; Xie, Yi

2015-12-02

Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (RRAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/-1.5 V, the corresponding electric field is around 20,000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 10(3) times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics.

Surface morphological, electrical and transport properties of rapidly annealed double layers Ru/Cr Schottky structure on n-type InP

NASA Astrophysics Data System (ADS)

Shanthi Latha, K.; Rajagopal Reddy, V.

2017-07-01

The electrical and transport properties of a fabricated bilayer Ru/Cr/ n-InP Schottky diode (SD) have been investigated at different annealing temperatures. Atomic force microscopy results have showed that the overall surface morphology of the Ru/Cr/ n-InP SD is fairly smooth at elevated temperatures. High barrier height is achieved for the diode annealed at 300 °C compared to the as-deposited, annealed at 200 and 400 °C diodes. The series resistance and shunt resistance of the Ru/Cr/ n-InP SD are estimated by current-voltage method at different annealing temperatures. The barrier heights and series resistance are also determined by Cheung's and modified Norde functions. The interface state density of the Ru/Cr/ n-InP SD is found to be decreased after annealing at 300 °C and then slightly increased upon annealing at 400 °C. The difference between barrier heights obtained from current-voltage and capacitance-voltage is also discussed. Experimental results have showed that the Poole-Frenkel emission is found to be dominant in the lower bias region whereas Schottky emission is dominant in the higher bias region for the Ru/Cr/ n-InP SDs irrespective of annealing temperatures.

Growth and characterization of sol-gel derived CuGaO2 semiconductor thin films for UV photodetector application

NASA Astrophysics Data System (ADS)

Tsay, Chien-Yie; Chen, Ching-Lien

2017-06-01

In this study, a p-type wide-bandgap oxide semiconductor CuGaO2 thin film was grown on quartz substrate by sol-gel method. The authors report the influence of annealing temperature on the phase transformation, structural features, and electrical properties of sol-gel derived Cu-Ga-O thin films. At relatively low annealing temperatures (≤900 °C), the films are a mixture of CuGa2O4, CuGaO2, and CuO phases. At relatively high annealing temperatures (≥925 °C), the majority phase in the films is delafossite CuGaO2. All as-prepared Cu-Ga-O thin films exhibited p-type conductivity, as confirmed by Hall measurements. The mean electrical resistivity of the Cu-Ga-O films decreased from 3.54×104 Ω-cm to 1.35×102 Ω-cm and then increased slightly to 3.51×102 Ω-cm when the annealing temperature was increased from 850 °C to 950 °C. We found that annealing the Cu-based oxide thin films at 925 °C produced nearly phase-pure CuGaO2 thin films with good densification. Such thin films exhibited the best electrical properties: a mean electrical resistivity of 1.35×102 Ω-cm, and a mean hole concentration of 1.60×1016 cm-3. In addition, we also fabricated and characterized MSM-type CuGaO2 UV photodetectors on quartz substrates.

Elevated temperature strain gages

NASA Technical Reports Server (NTRS)

Brittain, J. O.; Geslin, D.; Lei, J. F.

1985-01-01

Materials were evaluated that could be used in manufacturing electrical resistance strain gages for static strain measurements at temperatures at or above 1273 K. Strain gage materials must have a characteristic response to strain, temperature and time that is reproducible or that varies in a predictable manner within specified limits. Several metallic alloys were evaluated, as well as a series of transition metal carbides, nitrides and silicides.

Thermal Vacuum Testing of a Novel Loop Heat Pipe Design for the Swift BAT Instrument

NASA Technical Reports Server (NTRS)

Ottenstein, Laura; Ku, Jentung; Feenan, David

2003-01-01

An advanced thermal control system for the Burst Alert Telescope on the Swift satellite has been designed and an engineering test unit (ETU) has been built and tested in a thermal vacuum chamber. The ETU assembly consists of a propylene loop heat pipe, two constant conductance heat pipes, a variable conductance heat pipe (VCHP), which is used for rough temperature control of the system, and a radiator. The entire assembly was tested in a thermal vacuum chamber at NASA/GSFC in early 2002. Tests were performed with thermal mass to represent the instrument and with electrical resistance heaters providing the heat to be transferred. Start-up and heat transfer of over 300 W was demonstrated with both steady and variable condenser sink temperatures. Radiator sink temperatures ranged from a high of approximately 273 K, to a low of approximately 83 K, and the system was held at a constant operating temperature of 278 K throughout most of the testing. A novel LHP temperature control methodology using both temperature-controlled electrical resistance heaters and a small VCHP was demonstrated. This paper describes the system and the tests performed and includes a discussion of the test results.

Magnetic, Electrical and Dielectric Properties of LaMnO3+η Perovskite Manganite.

NASA Astrophysics Data System (ADS)

v, Punith Kumar; Dayal, Vijaylakshmi

The high pure polycrystalline LaMnO3+η perovskite manganite has been synthesized using conventional solid state reaction method. The studied sample crystallizes into orthorhombic O', phase indexed with Pbnm space group. The magnetization measurement exhibits that the studied sample shows paramagnetic (PM) to ferromagnetic (FM) phase transition at TC = 191.6K followed with a frustration due to antiferromagnetic (AFM) kind of spin ordering at low temperature, Tf = 85.8K. The electrical resistivity measurements carried out at 0 tesla and 8 tesla magnetic field exhibits insulating kind of behavior throughout the measured temperature range. The resistivity at 0 tesla exhibits low temperature FM insulator to high temperature PM insulator type phase transition at TC = 191.6K similarly as observed from magnetization measurement. The application of the magnetic field (8 tesla) shifts TC to higher temperature side and the charge transport follows Shklovskii Efros variable range hopping (SE VRH) mechanism. The temperature and frequency dependent dielectric permittivity studied for the sample exhibits relaxation process explained based on Debye +Maxwell-Wagner relaxation mechanism. Department of Atomic Energy-Board of Research in Nuclear Sciences, Government of INDIA.

Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

NASA Astrophysics Data System (ADS)

He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

2013-10-01

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

Development of High Performance CFRP/Metal Active Laminates

NASA Astrophysics Data System (ADS)

Asanuma, Hiroshi; Haga, Osamu; Imori, Masataka

This paper describes development of high performance CFRP/metal active laminates mainly by investigating the kind and thickness of the metal. Various types of the laminates were made by hot-pressing of an aluminum, aluminum alloys, a stainless steel and a titanium for the metal layer as a high CTE material, a unidirectional CFRP prepreg as a low CTE/electric resistance heating material, a unidirectional KFRP prepreg as a low CTE/insulating material. The aluminum and its alloy type laminates have almost the same and the highest room temperature curvatures and they linearly change with increasing temperature up to their fabrication temperature. The curvature of the stainless steel type jumps from one to another around its fabrication temperature, whereas the titanium type causes a double curvature and its change becomes complicated. The output force of the stainless steel type attains the highest of the three under the same thickness. The aluminum type successfully increased its output force by increasing its thickness and using its alloys. The electric resistance of the CFRP layer can be used to monitor the temperature, that is, the curvature of the active laminate because the curvature is a function of temperature.

High-throughput resistivity apparatus for thin-film combinatorial libraries

NASA Astrophysics Data System (ADS)

Hewitt, K. C.; Casey, P. A.; Sanderson, R. J.; White, M. A.; Sun, R.

2005-09-01

An apparatus, capable of measuring the dc resistance versus temperature of a 49-member library prepared by thin-film deposition techniques was designed and tested. The library is deposited by dc magnetron sputtering onto 10.16cm×10.16cm alumina substrates on which are placed aluminum masks consisting of 8mm diam holes cut on a 7×7 grid, the center-to-center spacing being 10.15mm. Electrical contact to the library is made in a standard van der Pauw geometry using 196 spring-loaded, gold-coated pins, four pins for each member of the library. The temperature is controlled using a helium refrigerator in combination with a liquid-nitrogen radiation shield that greatly reduces radiative heating of the sample stage. With the radiation shield, the cold finger is able to sustain a minimum temperature of 7K and the sample stage a minimum temperature of 27K. The temperature (27-291K) dependent dc resistivity of a thin-film silver library of varying thickness (48-639nm) is presented to highlight the capabilities of the apparatus. The thickness dependence of both the resistivity and the temperature coefficient of resistivity are quantitatively consistent with the literature. For thicknesses greater than about 100nm, the room-temperature resistivity (3.4μΩcm) are consistent with Matthiessen's rule for 1%-2% impurity content, and the temperature coefficient of resistivity is consistent with the bulk value. For thicknesses less than 100nm, an increase in resistivity by a factor of 8 is found, which may be due to surface and boundary scattering effects; a corresponding increase in the temperature coefficient of resistivity is consistent with a concomitant decrease in the magnitude of the elastic constants and surface scattering effects.

Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

PubMed

Hu, Wei; Zou, Lilan; Chen, Xinman; Qin, Ni; Li, Shuwei; Bao, Dinghua

2014-04-09

We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.

Fe, Co, Ni: Electrical Resistivity Along their Melting Boundaries

NASA Astrophysics Data System (ADS)

Silber, R. E.; Ezenwa, I.; Secco, R.; Yong, W.

2017-12-01

Electrical resistivity of Fe, Co, and Ni was measured at pressures up to 11 GPa and temperatures into their liquid states in multi-anvil and cubic-anvil presses. Two thermocouples placed at opposite ends of the wire sample served as T probes as well as 4-wire resistance electrodes in a switched circuit. A polarity switch was also used to remove any bias associated with current flow and voltage measurement using thermocouple legs. Post experimental examination of recovered and sectioned samples was done using electron microprobe analyses to check for diffusion in our samples. The observed large jumps in resistivity at the high P melting T of each metal is consistent with its known P,T phase diagram and with post-run compositional analyses. The electrical resistivity behavior in these late transition metals as a function of increasing P and T shows expected trends consistent with 1atm data. Within the error of measurement, the resistivity values at the melting T at high P of Co and Ni appear to mimic their 1 atm value suggesting constant resistivity along the melting boundary. For liquid Fe, resistivity decreases along the melting boundary up to the triple point at 5.2 GPa, and then is nearly constant at higher pressures. The results are compared to prediction by Stacey and Loper (PEPI, 2007).

The relief of microtherm inhibition for p-fluoronitrobenzene mineralization using electrical stimulation at low temperatures.

PubMed

Zhang, Xueqin; Feng, Huajun; Liang, Yuxiang; Zhao, Zhiqing; Long, Yuyang; Fang, Yuan; Wang, Meizhen; Yin, Jun; Shen, Dongsheng

2015-05-01

Low temperature aggravates biological treatment of refractory p-fluoronitrobenzene (p-FNB) because of microtherm inhibition of microbial activity. Considering the potential characterization of energy supply for microbial metabolism and spurring microbial activity by electrical stimulation, a bioelectrochemical system (BES) was established to provide sustaining electrical stimulation for p-FNB mineralization at a low temperature. Electrical stimulation facilitated p-FNB treatment and bioelectrochemical reaction rate constants for the removal and defluorination of p-FNB at 10 °C were 0.0931 and 0.0054 h(-1), which were higher than the sums of the rates found using a biological system and an electrocatalytic system by 62.8 and 64.8%, respectively. At a low temperature, microbial activity in terms of dehydrogenase and ATPase was found to be higher with electrical stimulation, being 121.1 and 100.1% more active than that in the biological system. Moreover, stronger antioxidant ability was observed in the BES, which implied a better cold-resistance and relief of microtherm inhibition by electrical stimulation. Bacterial diversity analysis revealed a significant evolution of microbial community by electrical stimulation, and Clostridia was uniquely enriched. One bacterial sequence close to Pseudomonas became uniquely predominant, which appeared to be crucial for excellent p-FNB treatment performance in the BES at a low temperature. Economic evaluation revealed that the energy required to mineralize an extra mole of p-FNB was found to be 247 times higher by heating the system than by application of electrical stimulation. These results indicated that application of electrical stimulation is extremely promising for treating refractory waste at low temperatures.

Coupling behaviors of graphene/SiO2/Si structure with external electric field

NASA Astrophysics Data System (ADS)

Onishi, Koichi; Kirimoto, Kenta; Sun, Yong

2017-02-01

A traveling electric field in surface acoustic wave was introduced into the graphene/SiO2/Si sample in the temperature range of 15 K to 300 K. The coupling behaviors between the sample and the electric field were analyzed using two parameters, the intensity attenuation and time delay of the traveling-wave. The attenuation originates from Joule heat of the moving carriers, and the delay of the traveling-wave was due to electrical resistances of the fixed charge and the moving carriers with low mobility in the sample. The attenuation of the external electric field was observed in both Si crystal and graphene films in the temperature range. A large attenuation around 190 K, which depends on the strength of external electric field, was confirmed for the Si crystal. But, no significant temperature and field dependences of the attenuation in the graphene films were detected. On the other hand, the delay of the traveling-wave due to ionic scattering at low temperature side was observed in the Si crystal, but cannot be detected in the films of the mono-, bi- and penta-layer graphene with high conductivities. Also, it was indicated in this study that skin depth of the graphene film was less than thickness of two graphene atomic layers in the temperature range.

High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films

NASA Astrophysics Data System (ADS)

Adnane, L.; Dirisaglik, F.; Cywar, A.; Cil, K.; Zhu, Y.; Lam, C.; Anwar, A. F. M.; Gokirmak, A.; Silva, H.

2017-09-01

High-temperature characterization of the thermoelectric properties of chalcogenide Ge2Sb2Te5 (GST) is critical for phase change memory devices, which utilize self-heating to quickly switch between amorphous and crystalline states and experience significant thermoelectric effects. In this work, the electrical resistivity and Seebeck coefficient are measured simultaneously as a function of temperature, from room temperature to 600 °C, on 50 nm and 200 nm GST thin films deposited on silicon dioxide. Multiple heating and cooling cycles with increasingly maximum temperature allow temperature-dependent characterization of the material at each crystalline state; this is in contrast to continuous measurements which return the combined effects of the temperature dependence and changes in the material. The results show p-type conduction (S > 0), linear S(T), and a positive Thomson coefficient (dS/dT) up to melting temperature. The results also reveal an interesting linearity between dS/dT and the conduction activation energy for mixed amorphous-fcc GST, which can be used to estimate one parameter from the other. A percolation model, together with effective medium theory, is adopted to correlate the conductivity of the material with average grain sizes obtained from XRD measurements. XRD diffraction measurements show plane-dependent thermal expansion for the cubic and hexagonal phases.

47 CFR 73.267 - Determining operating power.

Code of Federal Regulations, 2012 CFR

2012-10-01

... a resistance equal to the transmission line characteristic impedance) and using an electrical device (within ±5% accuracy) or temperature and coolant flow indicator (within ±4% accuracy) to determine the...

Temperature driven evolution of thermal, electrical, and optical properties of Ti-Al-N coatings.

PubMed

Rachbauer, Richard; Gengler, Jamie J; Voevodin, Andrey A; Resch, Katharina; Mayrhofer, Paul H

2012-03-01

Monolithic single phase cubic (c) Ti 1- x Al x N thin films are used in various industrial applications due to their high thermal stability, which beneficially effects lifetime and performance of cutting and milling tools, but also find increasing utilization in electronic and optical devices. The present study elucidates the temperature-driven evolution of heat conductivity, electrical resistivity and optical reflectance from room temperature up to 1400 °C and links them to structural and chemical changes in Ti 1- x Al x N coatings. It is shown that various decomposition phenomena, involving recovery and spinodal decomposition (known to account for the age hardening phenomenon in c-Ti 1- x Al x N), as well as the cubic to wurtzite phase transformation of spinodally formed AlN-enriched domains, effectively increase the thermal conductivity of the coatings from ∼3.8 W m -1  K -1 by a factor of three, while the electrical resistivity is reduced by one order of magnitude. A change in the coating color from metallic grey after deposition to reddish-golden after annealing to 1400 °C is related to the film structure and discussed in terms of film reflectivity.

Free-standing nanocomposites with high conductivity and extensibility.

PubMed

Chun, Kyoung-Yong; Kim, Shi Hyeong; Shin, Min Kyoon; Kim, Youn Tae; Spinks, Geoffrey M; Aliev, Ali E; Baughman, Ray H; Kim, Seon Jeong

2013-04-26

The prospect of electronic circuits that are stretchable and bendable promises tantalizing applications such as skin-like electronics, roll-up displays, conformable sensors and actuators, and lightweight solar cells. The preparation of highly conductive and highly extensible materials remains a challenge for mass production applications, such as free-standing films or printable composite inks. Here we present a nanocomposite material consisting of carbon nanotubes, ionic liquid, silver nanoparticles, and polystyrene-polyisoprene-polystyrene having a high electrical conductivity of 3700 S cm(-1) that can be stretched to 288% without permanent damage. The material is prepared as a concentrated dispersion suitable for simple processing into free-standing films. For the unstrained state, the measured thermal conductivity for the electronically conducting elastomeric nanoparticle film is relatively high and shows a non-metallic temperature dependence consistent with phonon transport, while the temperature dependence of electrical resistivity is metallic. We connect an electric fan to a DC power supply using the films to demonstrate their utility as an elastomeric electronic interconnect. The huge strain sensitivity and the very low temperature coefficient of resistivity suggest their applicability as strain sensors, including those that operate directly to control motors and other devices.

Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

NASA Astrophysics Data System (ADS)

Hassanien, A. S.; Akl, Alaa A.

2016-01-01

Compositional dependence of optical and electrical properties of chalcogenide CdSxSe1-x (0.4 ≥ x ≥ 0.0 at. %) thin films was studied. Cadmium sulphoselenide films were deposited by thermal evaporation technique at vacuum (8.2 × 10-4 Pa) onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at 2.50 nm/s and 375 ± 5 nm, respectively. X-ray diffractograms showed that, the deposited films have the low crystalline nature. Energy dispersive analysis by X-ray (EDAX) was used to check the compositional elements of deposited films. The absorption coefficient was determined from transmission and reflection measurements at room temperature in the wavelength range 300-2500 nm. Optical density, skin depth, optical energy gap and Urbach's parameters of CdSSe thin films have also been estimated. The direct optical energy gap decreased from 2.248 eV to 1.749 eV when the ratio of Se-content was increased from 0.60 to 1.00 . Conduction band and valance band positions were evaluated. The temperature dependence of dc-electrical resistivity in the temperature range (293-450 K) has been reported. Three conduction regions due to different conduction mechanisms were detected. Electrical sheet resistance, activation energy and pre-exponential parameters were discussed. The estimated values of optical and electrical parameters were strongly dependent upon the Se-content in CdSSe matrix.

Solidification processing of alloys using an applied electric field

NASA Technical Reports Server (NTRS)

Mckannan, Eugene C. (Inventor); Schmidt, Deborah D. (Inventor); Ahmed, Shaffiq (Inventor); Bond, Robert W. (Inventor)

1990-01-01

A method is provided for obtaining an alloy having an ordered microstructure which comprises the steps of heating the central portion of the alloy under uniform temperature so that it enters a liquid phase while the outer portions remain solid, applying a constant electric current through the alloy during the heating step, and solidifying the liquid central portion of the alloy by subjecting it to a temperature-gradient zone so that cooling occurs in a directional manner and at a given rate of speed while maintaining the application of the constant electric current through the alloy. The method of the present invention produces an alloy having superior characteristics such as reduced segregation. After subsequent precipitation by heat-treatment, the alloys produced by the present invention will have excellent strength and high-temperature resistance.

Temperature dependent electrical characteristics of Zn/ZnSe/n-GaAs/In structure

NASA Astrophysics Data System (ADS)

Sağlam, M.; Güzeldir, B.

2016-04-01

We have reported a study of the I-V characteristics of Zn/ZnSe/n-GaAs/In sandwich structure in a wide temperature range of 80-300 K by a step of 20 K, which are prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The main electrical parameters, such as ideality factor and zero-bias barrier height determined from the forward bias I-V characteristics were found strongly depend on temperature and when the increased, the n decreased with increasing temperature. The ideality factor and barrier height values as a function of the sample temperature have been attributed to the presence of the lateral inhomogeneities of the barrier height. Furthermore, the series resistance have been calculated from the I-V measurements as a function of temperature dependent.

Electrical resistance of single-crystal magnetite (Fe 3 O 4 ) under quasi-hydrostatic pressures up to 100 GPa

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muramatsu, Takaki; Gasparov, Lev V.; Berger, Helmuth

2016-04-07

We measured the pressure dependence of electrical resistance of single-crystal magnetite (Fe 3O 4) under quasi-hydrostatic conditions to 100 GPa using low-temperature, megabar diamond-anvil cell techniques in order to gain insight into the anomalous behavior of this material that has been reported over the years in different high-pressure experiments. The measurements under nearly hydrostatic pressure conditions allowed us to detect the clear Verwey transition and the high-pressure structural phase. Furthermore, the appearance of a metallic ground state after the suppression of the Verwey transition around 20 GPa and the concomitant enhancement of electrical resistance caused by the structural transformation tomore » the high-pressure phase form reentrant semiconducting-metallic-semiconducting behavior, though the appearance of the metallic phase is highly sensitive to stress conditions and details of the measurement technique.« less

Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

NASA Astrophysics Data System (ADS)

So, Hongyun; Senesky, Debbie G.

2016-01-01

In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area.

Electrically Conductive and Protective Coating for Planar SOFC Stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Jung-Pyung; Stevenson, Jeffry W.

Ferritic stainless steels are preferred interconnect materials for intermediate temperature SOFCs because of their resistance to oxidation, high formability and low cost. However, their protective oxide layer produces Cr-containing volatile species at SOFC operating temperatures and conditions, which can cause cathode poisoning. Electrically conducting spinel coatings have been developed to prevent cathode poisoning and to maintain an electrically conductive pathway through SOFC stacks. However, this coating is not compatible with the formation of stable, hermetic seals between the interconnect frame component and the ceramic cell. Thus, a new aluminizing process has been developed by PNNL to enable durable sealing, preventmore » Cr evaporation, and maintain electrical insulation between stack repeat units. Hence, two different types of coating need to have stable operation of SOFC stacks. This paper will focus on the electrically conductive coating process. Moreover, an advanced coating process, compatible with a non-electrically conductive coating will be« less

Investigation of structural and electrical properties of La{sub 0.7}(Ba{sub 1-x}Ca{sub x}){sub 0.3}MnO{sub 3} compounds by sol-gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Winarsih, Suci; Kurniawan, Budhy, E-mail: bkuru07@gmail.com; Manaf, Azwar

2016-06-17

In this paper, we explored structural and electrical properties of La{sub 0.7}(Ba{sub 1-x}Ca{sub x}){sub 0.3}MnO{sub 3} (x = 0; 0.03; and 0.05) compounds. The general structure of perovskite manganites is AMnO{sub 3} (A= trivalent rare earth with divalent ion-doped). Average A-site cation size, external pressure, and the variance of the cation size σ{sup 2} are one of many factors that affected to magneto-transport properties of manganites as reported by others. In this work we focus only on the electrical properties in La{sub 0.7}Ba{sub 0.3}MnO{sub 3} Ca-doped compound which may influence crystal structure resulting resistivity phenomena under magnetic field influence. Allmore » samples were synthesized by sol-gel method from which fine powders were obtained. The X-ray powder diffraction pattern of powder materials shows that all samples are fully crystalline with a rhombohedral structure. Rietveld refinement shows that the presence of calcium has changed some crystal structural parameters such lattice parameter, Mn–O bond length, and Mn–O–Mn angles. The electrical resistivity of all synthesized materials investigated by four point probe method using Cryogenic Magnet in the temperature range of 50-300 K under influence a magnetic field shows resistivity temperature dependent. In fact presence of calcium has reduced the resistivity. It might occure because it has made an enhancement in the mobility of hopping electrons. The magnetic external field causes the resistivity decreased for all samples because host spin align by delocalizing the charge carries so electron itinerant through the lattice suggested by other authors. Both calcium dopant concentration and the applied external magnetic field shows strong correlation in reduction of resistivity.« less

Effect of oxygen concentration on fire growth of various types of cable bending in horizontal and vertical orientations

NASA Astrophysics Data System (ADS)

Pangaribuan, Adrianus; Dhiputra, I. M. K.; Nugroho, Yulianto S.

2017-03-01

Electrical cable is a whole of the material including metal (cooper) conductor and its insulation, when an electrical cable is flowed by electric current, based on its own capacity, the temperature of cable conductor increases gradually. If the current flows above the cable carrying capacity, then an extreme temperature rises are expected. When temperature increase, the electric current flow inside cable conductor will decrease gradually related to the resistance and could occur repeatedly in a period. Since electrical faults on electrical cable system are often suspected as the cause of fires, thus this research aims to investigate measures of preventing the fire to start by means of controlling oxygen concentration in a cable compartment. The experimental work was conducted in laboratory by using electrical power cable of 1.5 mm2 size. Two transparent chambers were applied for studying the effect of vertical and horizontal orientations on the cable temperature rise, under various oxygen concentration of the gas streams. In the present work, the electrical was maintained at a constant level during a typical test run. Parametric studies reported in the paper include the use of a bare and insulated cables as well as the bending shape of the cable lines of a straight cable, coiled cable and randomly bent cable which were loaded with the same electric load and oxygen concentration in the gas supply.

Pressure dependence of the electron-phonon interaction and the normal-state resistivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rapp, O.; Sundqvist, B.

1981-07-01

Accurate measurements of the electrical resistance as a function of temperature and pressure are reported for Sn, Zr, dhcp La, and V. These measurements cover a temperature region around room temperature and pressures up to 1.3 GPa. From these data, including also our previous measurements for Al and published results for Pb, the pressure dependence of drho/dT (the resistivity-temperature derivative) is obtained. This quantity is found to be a significant factor in the pressure dependence of the electron-phonon interaction parameter lambda. For the nontransition metals the relative pressure dependence of drho/dT is much larger than the compressibility. Therefore the pressuremore » dependence of the superconducting T/sub c/ is quantitatively well accounted for by the resistance data for these metals. For the transition metals the pressure dependence of drho/dT is relatively smaller and T/sub c/(p) calculated from the resistance data is, at the best, only qualitatively correct. These differences are discussed. Estimates for the pressure dependence of the plasma frequency are obtained.« less

Physical Analysis of an Electric Resistor Heating

ERIC Educational Resources Information Center

Perea Martins, J. E. M.

2018-01-01

This work describes a simple experiment to measure the resistor temperature as a function of the applied power and proves that it is an efficient way to introduce some important physical concepts in classroom, including the Joule's first law, hot-spot temperature, thermal resistance, thermal dissipation constant, time constant and the Newton's law…

Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muneshwar, Triratna, E-mail: muneshwa@ualberta.ca; Cadien, Ken

2015-11-15

Atomic layer deposition (ALD) relies on a sequence of self-limiting surface reactions for thin film growth. The effect of non-ALD side reactions, from insufficient purging between pulses and from precursor self-decomposition, on film growth is well known. In this article, precursor condensation within an ALD valve is described, and the effect of the continuous precursor source from condensate evaporation on ALD growth is discussed. The influence of the ALD valve temperature on growth and electrical resistivity of ZrN plasma enhanced ALD (PEALD) films is reported. Increasing ALD valve temperature from 75 to 95 °C, with other process parameters being identical, decreasedmore » both the growth per cycle and electrical resistivity (ρ) of ZrN PEALD films from 0.10 to 0.07 nm/cycle and from 560 to 350 μΩ cm, respectively. Our results show that the non-ALD growth resulting from condensate accumulation is eliminated at valve temperatures close to the pressure corrected boiling point of precursor.« less

Transport property correlations for the niobium-1% zirconium alloy

NASA Astrophysics Data System (ADS)

Senor, David J.; Thomas, J. Kelly; Peddicord, K. L.

1990-10-01

Correlations were developed for the electrical resistivity (ρ), thermal conductivity ( k), and hemispherical total emittance (ɛ) of niobium-1% zirconium as functions of temperature. All three correlations were developed as empirical fits to experimental data. ρ = 5.571 + 4.160 × 10 -2(T) - 4.192 × 10 -6(T) 2 μΩcm , k = 13.16( T) 0.2149W/ mK, ɛ = 6.39 × 10 -2 + 4.98 × 10 -5( T) + 3.62 × 10 -8( T) 2 - 7.28 × 10 -12( T) 3. The relative standard deviation of the electrical resistivity correlation is 1.72% and it is valid over the temperature range 273 to 2700 K. The thermal conductivity correlation has a relative standard deviation of 3.24% and is valid over the temperature range 379 to 1421 K. The hemispherical total emittance correlation was developed for smooth surface materials only and represents a conservative estimate of the emittance of the alloy for space reactor fuel element modeling applications. It has a relative standard deviation of 9.50% and is valid over the temperature range 755 to 2670 K.

Electrical, structural and surface morphological properties of thermally stable low-resistance W/Ti/Au multilayer ohmic contacts to n-type GaN

NASA Astrophysics Data System (ADS)

Jyothi, I.; Reddy, V. Rajagopal

2010-10-01

A W/Ti/Au multilayer scheme has been fabricated for achieving thermally stable low-resistance ohmic contact to n-type GaN (4.0 × 10 18 cm -3). It is shown that the as-deposited W/Ti/Au contact exhibits near linear I- V behaviour. However, annealing at temperature below 800 °C the contacts exhibit non-linear behaviour. After annealing at a temperature in excess of 850 °C, the W/Ti/Au contact showed ohmic behaviour. The W/Ti/Au contact produced specific contact resistance as low as 6.7 × 10 -6 Ω cm 2 after annealing at 900 °C for 1 min in a N 2 ambient. It is noted that the specific contact resistance decreases with increase in annealing temperature. It is also noted that annealing the contacts at 900 °C for 30 min causes insignificant degradation of the electrical and thermal properties. It is further shown that the overall surface morphology of the W/Ti/Au stayed fairly smooth even after annealing at 900 °C. The W/Ti/Au ohmic contact showed good edge sharpness after annealing at 900 °C for 30 min. Based on the Auger electron spectroscopy and glancing angle X-ray diffraction results, possible explanation for the annealing dependence of the specific contact resistance of the W/Ti/Au contacts are described and discussed.

Microhotplate Temperature Sensor Calibration and BIST.

PubMed

Afridi, M; Montgomery, C; Cooper-Balis, E; Semancik, S; Kreider, K G; Geist, J

2011-01-01

In this paper we describe a novel long-term microhotplate temperature sensor calibration technique suitable for Built-In Self Test (BIST). The microhotplate thermal resistance (thermal efficiency) and the thermal voltage from an integrated platinum-rhodium thermocouple were calibrated against a freshly calibrated four-wire polysilicon microhotplate-heater temperature sensor (heater) that is not stable over long periods of time when exposed to higher temperatures. To stress the microhotplate, its temperature was raised to around 400 °C and held there for days. The heater was then recalibrated as a temperature sensor, and microhotplate temperature measurements were made based on the fresh calibration of the heater, the first calibration of the heater, the microhotplate thermal resistance, and the thermocouple voltage. This procedure was repeated 10 times over a period of 80 days. The results show that the heater calibration drifted substantially during the period of the test while the microhotplate thermal resistance and the thermocouple-voltage remained stable to within about plus or minus 1 °C over the same period. Therefore, the combination of a microhotplate heater-temperature sensor and either the microhotplate thermal resistance or an integrated thin film platinum-rhodium thermocouple can be used to provide a stable, calibrated, microhotplate-temperature sensor, and the combination of the three sensor is suitable for implementing BIST functionality. Alternatively, if a stable microhotplate-heater temperature sensor is available, such as a properly annealed platinum heater-temperature sensor, then the thermal resistance of the microhotplate and the electrical resistance of the platinum heater will be sufficient to implement BIST. It is also shown that aluminum- and polysilicon-based temperature sensors, which are not stable enough for measuring high microhotplate temperatures (>220 °C) without impractically frequent recalibration, can be used to measure the silicon substrate temperature if never exposed to temperatures above about 220 °C.

Electrical and mechanical properties of Sn-5wt.%Sb alloy with annealing temperature

NASA Astrophysics Data System (ADS)

Said Gouda, El; Ahmed, E. M.; Saad Allah, F. A.

2009-01-01

A binary Sn-5wt.%Sb solder alloy was chosen as a potential alternative to Sn-Pb solder alloy to be subjected to many studies. It was casted from the liquid state, cold drawn into wires of 1 mm diameters. The study includes the structure, electrical resistivity, tensile strength, hardness and indentation creep behavior using XRD, four probes electrical circuit, conventional tensile testing machine, Vickers microhardness tester, respectively. These properties were carried out for the cold worked alloy and after annealing at 393 and 473 K for 60 min. It was found that annealed samples exhibit more precipitations of the intermetallic compounds SnSb, higher lattice parameters and higher crystallite size, while have lower lattice-strain induced due to the cold working process. These structural changes greatly affect the electrical resistivity and mechanical properties of this alloy.

Analysis of one year time-lapse electrical data to unravel hydrological processes acting on a clayey landslide

NASA Astrophysics Data System (ADS)

Gance, J.; Sailhac, P.; Malet, J.; Supper, R.; Jochum, B.; Ottowitz, D.; Grandjean, G.

2013-12-01

Movements of water in the topsoil (infiltration, run-off and evaporation) influence changes in slope stability which is the main controlling factor of landslide triggering (e.g. van Asch et al., 1999). Among the petrophysical parameters that can provide time-lapse sections of the topsoil, we consider the electrical conductivity for its sensitivity to soil water contents. Based on recent works which showed the possibility of monitoring the hydrological response of a clay-shale slope to a controlled rainfall experiment (Travelletti et al., 2012), we installed a permanent electrical monitoring experiment at the Super-Sauze landslide for long-term monitoring (one year) of natural meteorological events. We used the GEOMON4D resistivimeter, developed by the Austrian Geological Survey (Vienna, Austria) for experiments needing high rate of data acquisition, records of full signal samples for noise detection, remote controlled management and automatic data transfer (Supper et al., 2002, 2003 & 2004). The electrode positions varying with time, we installed two terrestrial optical cameras to characterize the changes in dipole geometry. Several hydrological sensors were installed along the profile to measure soil temperature, water temperature and conductivity, ground water level and soil humidity in the vadose zone. The main challenge is the processing of ca. 4.2 million of electrical resistivity data. In this difficult context, the potential factors influencing electrical resistivity with time without modification of soil saturation are the relative changes in the dipole geometry (linked to the displacement of the electrodes), changes in soil and water temperature, change in material porosity due to compaction/dilatation caused by the landslide movement. Therefore, before any inversion of data, we verify the presence of possible 3D effects, and assess the measurement accuracy and uncertainty. An apparent resistivity variation threshold, from which a modification of the saturation can be attributed, is determined. From those first results, we first investigate changes in the apparent resistivity. Responses to different hydrological processes (such as soil freezing/thawing, snow melting, high intensity rainfall, debris flow events) occurring during the monitoring period are detectable on the inversed resistivities over short periods. For example The results of the study highlight the difficulty to monitor hydrological changes on a clay-shale landslide, and will permit to improve such future device. Although a quantitative interpretation of the apparent resistivity is impossible, typical responses are clearly detectable and allows a first qualitative interpretation of hydrological changes in the landslide

Antiferromagnetism and superconductivity in the half-Heusler semimetal HoPdBi

PubMed Central

Pavlosiuk, Orest; Kaczorowski, Dariusz; Fabreges, Xavier; Gukasov, Arsen; Wiśniewski, Piotr

2016-01-01

We observed the coexistence of superconductivity and antiferromagnetic order in the single-crystalline ternary pnictide HoPdBi, a plausible topological semimetal. The compound orders antiferromagnetically at TN = 1.9 K and exhibits superconductivity below Tc = 0.7 K, which was confirmed by magnetic, electrical transport and specific heat measurements. The specific heat shows anomalies corresponding to antiferromagnetic ordering transition and crystalline field effect, but not to superconducting transition. Single-crystal neutron diffraction indicates that the antiferromagnetic structure is characterized by the propagation vector. Temperature variation of the electrical resistivity reveals two parallel conducting channels of semiconducting and metallic character. In weak magnetic fields, the magnetoresistance exhibits weak antilocalization effect, while in strong fields and temperatures below 50 K it is large and negative. At temperatures below 7 K Shubnikov-de Haas oscillations with two frequencies appear in the resistivity. These oscillations have non-trivial Berry phase, which is a distinguished feature of Dirac fermions. PMID:26728755

Enhancement of the physical properties of novel (1- x) NiFe2O4 + ( x) Al2O3 nanocomposite

NASA Astrophysics Data System (ADS)

Mansour, S. F.; Ahmed, M. A.; El-Dek, S. I.; Abdo, M. A.; Kora, H. H.

2017-07-01

NiFe2O4, Al2O3 and their nanocomposites; (1- x) NiFe2O4 + ( x) Al2O3, 0.0 ≤ x ≤ 1; were synthesized using the citrate-nitrate technique. The crystal structure was examined by X-ray diffraction, the microstructure was observed by transmission electron microscopy. The Curie temperature T C grows until reaching more than 1100 K with increasing alumina content ( x), while the saturation magnetization ( M s) decreased. The large improvement of room temperature resistivity which achieved two orders of magnitude from x = 0 to x = 70% was interpreted from the fact that the NiFe2O4 grains become electrically isolated and the conduction path is broken by the insulating Al2O3 nanoparticulates in the composite. The electrical properties of the nanocomposite could thus be tuned easily by adjusting the Al2O3 ratio to realize the targeted value of losses and resistivity at any temperature and frequency.

The partial substitution of copper with nickel oxide on the Structural and electrical properties of HgBa2 Ca2 Cu3xNix O8+δ superconducting compound

NASA Astrophysics Data System (ADS)

Jasim, K. A.; Mohammed, L. A.

2018-05-01

The present study the partial substitution of copper with nickel on of HgBa2Ca2Cu3xNix O8+δ superconducting compound where x=002040608. Samples were prepared by solid state reaction method with sintering temperature 850C0 for 24h. By using x-ray powder diffraction the structure of the samples were studied. The XRD analyses showed the structures of polycrystalline with tetragonal diagram with majority 1223 phase and the change of the nickel concentrations produce a change in lattice parameters of the lattice a b and c axis c/a density of mass ρm and volume fraction Vphase. Four probe apparatus was used to test the electrical resistivity to defined the critical temperature at zero resistivity Tc offset Optimum Tc offset was found from HgBa2Ca2Cu24Ni06O8+δ sample with transition temperature its equal to 137K.

Eutectic Contact Inks for Solar Cells

NASA Technical Reports Server (NTRS)

Ross, B.

1985-01-01

Low-resistance electrical contacts formed on solar cells by melting powders of eutectic composition of semiconductor and dopant. Process improves cell performance without subjecting cell to processing temperatures high enough to degrade other characteristics.

Removable preheater elements improve oxide induction furnace

NASA Technical Reports Server (NTRS)

Leipold, M. H.

1964-01-01

Heat and corrosion resistant preheater elements are used in oxide induction furnaces to raise the temperature to the level for conducting electricity. These preheater elements are then removed and the induction coil energized.

Electrical and Thermal Conductivity of Solid Solution Sn1- x Mn x Te (0 ≥ x ≥ 0.04)

NASA Astrophysics Data System (ADS)

Akhundova, N. M.

2018-01-01

Electrical and thermal properties of the Sn1-xMnxTe single crystals (0 ≥ x ≥ 0.04) with contacts of eutectic alloy 57Bi + 43Sn (in mass%) are investigated at temperatures from 77 to 300 K. Experimental results show that this alloy with specified single crystals forms ohmic contact with a sufficiently low contact resistance. The electronic thermal conductivity in some samples reaches about 50% of the total thermal conductivity, and structural defects contribute significantly to the thermal resistance of the crystals.

Gas Sensors Based on Coated and Doped Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Li, Jing; Meyyappan, Meyya

2008-01-01

Efforts are underway to develop inexpensive, low-power electronic sensors, based on single-walled carbon nanotubes (SWCNTs), for measuring part-per-million and part-per-billion of selected gases (small molecules) at room temperature. Chemically unmodified SWCNTs are mostly unresponsive to typical gases that one might wish to detect. However, the electrical resistances of SWCNTs can be made to vary with concentrations of gases of interest by coating or doping the SWCNTs with suitable materials. Accordingly, the basic idea of the present development efforts is to incorporate thus-treated SWCNTs into electronic devices that measure their electrical resistances.

Pressure effects on the magnetic and transport properties of the Kondo lattice system Ce3RuSn6

NASA Astrophysics Data System (ADS)

Wakiya, Kazuhei; Tomaki, Takeru; Kimura, Minami; Uehara, Masatomo; Gouchi, Jun; Uwatoko, Yoshiya; Umehara, Izuru

2018-05-01

The magnetization and electrical resistivity of Ce3RuSn6 have been measured in the temperature range from 2 to 300 K and in the pressure range up to 1 GPa. At ambient pressure, the magnetization shows a ferromagnetic-like steep rise below 4 K. The electrical resistivity drops at TC = 3.3 K due to the magnetic transition. We found that TC is slightly enhanced by applying pressure, suggesting that this compound sits on the left side of the peak in the Doniach phase diagram.

The influence of Ga additions on electric and magnetic properties of Co{sub 47}Fe{sub 21}B{sub 21}Si{sub 5}Nb{sub 6} alloy in crystal and liquid states

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sidorov, V., E-mail: vesidor@mail.ru; Rojkov, I.; Mikhailov, V.

2015-08-17

The influence of small additions of gallium on electric resistivity and magnetic susceptibility of the bulk glass forming Co{sub 47}Fe{sub 20.9}B{sub 21.2}Si{sub 4.6}Nb{sub 6.3} alloy was studied in a wide temperature range up to 1830 K. Gallium atoms were found to increase resistivity but decrease susceptibility of the alloy. The suppositions about clusters surrounding Ga atoms in the melt and new GFA criterion are given.

High pressure-assisted transfer of ultraclean chemical vapor deposited graphene

NASA Astrophysics Data System (ADS)

Chen, Zhiying; Ge, Xiaoming; Zhang, Haoran; Zhang, Yanhui; Sui, Yanping; Yu, Guanghui; Jin, Zhi; Liu, Xinyu

2016-03-01

We develop a high pressure-assisted (approximately 1000 kPa) transfer method to remove polymer residues and effectively reduce damages on the surface of graphene. By introducing an ethanol pre-dehydration technique and optimizing temperature, the graphene surface becomes nearly free of residues, and the quality of graphene is improved obviously when temperature reaches 140 °C. The graphene obtained using the high pressure-assisted transfer method also exhibits excellent electrical properties with an average sheet resistance of approximately 290 Ω/sq and a mobility of 1210 cm2/V.s at room temperature. Sheet resistance and mobility are considerably improved compared with those of the graphene obtained using the normal wet transfer method (average sheet resistance of approximately 510 ohm/sq and mobility of 750 cm2/V.s).

Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb / Si ( 1 1 1 ) ₋ ( 7 × 7 )

DOE PAGES

Jałochowski, M.; Zdyb, R.; Tringides, M. C.

2016-02-23

The growth of Pb on Si(111)-7x7 at temperatures from 72 K to 201 K has been investigated using in situ electrical resistivity measurements and Scanning Tunneling Microscopy (STM). For temperatures T>140 K the specific resistivity ρ(θ) vs coverage θ shows an unusual "hump", instead of the expected monotonic decrease with θ. This novel result correlates well with the formation of uniform height 8-layer Pb islands and the superdiffusive motion of the wetting layer, despite the low temperatures. A model of the film resistivity as two resistors in series, the amorphous wetting layer and the crystalline islands, explains quantitatively the resistivitymore » dependence on θ.« less

Optically Tunable Resistive-Switching Memory in Multiferroic Heterostructures

NASA Astrophysics Data System (ADS)

Zheng, Ming; Ni, Hao; Xu, Xiaoke; Qi, Yaping; Li, Xiaomin; Gao, Ju

2018-04-01

Electronic phase separation has been used to realize exotic functionalities in complex oxides with external stimuli, such as magnetic field, electric field, current, light, strain, etc. Using the Nd0.7Sr0.3MnO3/0.7 Pb (Mg1 /3Nb2 /3)O3-0 .3 PbTiO3 multiferroic heterostructure as a model system, we investigate the electric field and light cocontrol of phase separation in resistive switching. The electric-field-induced nonvolatile electroresistance response is achieved at room temperature using reversible ferroelastic domain switching, which can be robustly modified on illumination of light. Moreover, the electrically controlled ferroelastic strain can effectively enhance the visible-light-induced photoresistance effect. These findings demonstrate that the electric-field- and light-induced effects strongly correlate with each other and are essentially driven by electronic phase separation. Our work opens a gate to design electrically tunable multifunctional storage devices based on multiferroic heterostructures by adding light as an extra control parameter.

Shape memory alloy resistance behaviour at high altitude for feedback control

NASA Astrophysics Data System (ADS)

Ng, W. T.; Sedan, M. F.; Abdullah, E. J.; Azrad, S.; Harithuddin, A. S. M.

2017-12-01

Many recent aerospace technologies are using smart actuators to reduce the system's complexity and increase its reliability. One such actuator is shape memory alloy (SMA) actuator, which is lightweight, produces high force and large deflection. However, some disadvantages in using SMA actuators have been identified and they include nonlinear response of the strain to input current, hysteresis characteristic that results in inaccurate control and less than optimum system performance, high operating temperatures, slow response and also high requirement of electrical power to obtain the desired actuation forces. It is still unknown if the SMA actuators can perform effectively at high altitude with low surrounding temperature. The work presented here covers the preliminary process of verifying the feasibility of using resistance as feedback control at high altitude for aerospace applications. Temperature and resistance of SMA actuator at high altitude is investigated by conducting an experiment onboard a high altitude balloon. The results from the high altitude experiment indicate that the resistance or voltage drop of the SMA wire is not significantly affected by the low surrounding temperature at high altitude as compared to the temperature of SMA. Resistance feedback control for SMA actuators may be suitable for aerospace applications.

Investigation of electron beam lithography effects on metal-insulator transition behavior of vanadium dioxide

NASA Astrophysics Data System (ADS)

Yuce, H.; Alaboz, H.; Demirhan, Y.; Ozdemir, M.; Ozyuzer, L.; Aygun, G.

2017-11-01

Vanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.

A reversible transition in liquid Bi under pressure.

PubMed

Emuna, M; Matityahu, S; Yahel, E; Makov, G; Greenberg, Y

2018-01-21

The electrical resistance of solid and liquid Bi has been measured at high pressures and temperatures using a novel experimental design for high sensitivity measurements utilizing a "Paris-Edinburgh" toroid large volume press. An anomalous sharp decrease in resistivity with increasing temperature at constant pressures was observed in the region beyond melting which implies a possible novel transition in the melt. The proposed transition was observed across a range of pressures both in heating and cooling cycles of the sample demonstrating its reversibility. From the measurements it was possible to determine a "phase-line" of this transition on the Bi pressure-temperature phase diagram terminating at the melting curve.

Electric Conduction in Semiconductors: A Pedagogical Model Based on the Monte Carlo Method

ERIC Educational Resources Information Center

Capizzo, M. C.; Sperandeo-Mineo, R. M.; Zarcone, M.

2008-01-01

We present a pedagogic approach aimed at modelling electric conduction in semiconductors in order to describe and explain some macroscopic properties, such as the characteristic behaviour of resistance as a function of temperature. A simple model of the band structure is adopted for the generation of electron-hole pairs as well as for the carrier…

The Development of Electrical Strain Gages

NASA Technical Reports Server (NTRS)

De Forest, A V; Leaderman, H

1940-01-01

The design, construction, and properties of an electrical-resistance strain gage consisting of fine wires molded in a laminated plastic are described. The properties of such gages are discussed and also the problems of molding of wires in plastic materials, temperature compensation, and cementing and removal of the gages. Further work to be carried out on the strain gage, together with instrument problems, is discussed.

Measuring Thicknesses of Wastewater Films

NASA Technical Reports Server (NTRS)

Schubert, F. H.; Davenport, R. J.

1987-01-01

Sensor determines when thickness of film of electrically conductive wastewater on rotating evaporator drum exceeds preset value. Sensor simple electrical probe that makes contact with liquid surface. Made of materials resistant to chemicals in liquid. Mounted on shaft in rotating cylinder, liquid-thickness sensor extends toward cylinder wall so tip almost touches. Sensor body accommodates probe measuring temperature of evaporated water in cylinder.

Adjusting alloy compositions for selected properties in temperature limited heaters

DOEpatents

Brady; Michael Patrick , Horton, Jr.; Joseph Arno , Vitek; John Michael

2010-03-23

Heaters for treating a subsurface formation are described herein. Such heaters can be obtained by using the systems and methods described herein. The heater includes a heater section including iron, cobalt, and carbon. The heater section has a Curie temperature less than a phase transformation temperature. The Curie temperature is at least 740.degree. C. The heater section provides, when time varying current is applied to the heater section, an electrical resistance.

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

NASA Technical Reports Server (NTRS)

Prince, J. L.; Lathrop, J. W.

1979-01-01

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, open circuit voltage, and output power, voltage, and current at the maximum power point. Incorporated in the report are the distributions of the prestress electrical data for all cell types. Data were also obtained on cell series and shunt resistance.

Magnetic and electrical properties of dhcp NpPd3 and (U1-xNpx)Pd3

NASA Astrophysics Data System (ADS)

Walker, H. C.; McEwen, K. A.; Boulet, P.; Colineau, E.; Griveau, J.-C.; Rebizant, J.; Wastin, F.

2007-11-01

We have made an extensive study of the magnetic and electrical properties of double-hexagonal close-packed NpPd3 and a range of (U1-xNpx)Pd3 compounds with x=0.01 , 0.02, 0.05, and 0.50 using magnetization, magnetic susceptibility, electrical resistivity, and heat capacity measurements on polycrystalline samples, performed in the temperature range 2-300K and in magnetic fields up to 9T . Two transitions are observed in NpPd3 at T=10 and 30K . Dilute Np samples (x⩽0.05) exhibit quadrupolar transitions, with the transition temperatures reduced from those of pure UPd3 .

Electrical Conductive Mechanism of Gas Hydrate-Bearing Reservoirs in the Permafrost Region of Qilian Mountain

NASA Astrophysics Data System (ADS)

Peng, C.; Zou, C.; Tang, Y.; Liu, A.; Hu, X.

2017-12-01

In the Qilian Mountain, gas hydrates not only occur in pore spaces of sandstones, but also fill in fractures of mudstones. This leads to the difficulty in identification and evaluation of gas hydrate reservoir from resistivity and velocity logs. Understanding electrical conductive mechanism is the basis for log interpretation. However, the research is insufficient in this area. We have collected well logs from 30 wells in this area. Well logs and rock samples from DK-9, DK-11 and DK-12 wells were used in this study. The experiments including SEM, thin section, NMR, XRD, synthesis of gas hydrate in consolidated rock cores under low temperature and measurement of their resistivity and others were performed for understanding the effects of pore structure, rock composition, temperature and gas hydrate on conductivity. The results show that the porosity of reservoir of pore filling type is less than 10% and its clay mineral content is high. As good conductive passages, fractures can reduce resistivity of water-saturated rock. If fractures in the mudstone are filled by calcite, resistivity increases significantly. The resistivity of water-saturated rock at 2°C is twice of that at 18°C. The gas hydrate formation process in the sandstone was studied by resistivity recorded in real time. In the early stage of gas hydrate formation, the increase of residual water salinity may lead to the decrease of resistivity. In the late stage of gas hydrate formation, the continuity decrease of water leads to continuity increase of resistivity. In summary, fractures, rock composition, temperature and gas hydrate are important factors influencing resistivity of formation. This study is helpful for more accurate evaluation of gas hydrate from resistivity log. Acknowledgment: We acknowledge the financial support of the National Special Program for Gas Hydrate Exploration and Test-production (GZH201400302).

Detecting Damage in Ceramic Matrix Composites Using Electrical Resistance

NASA Technical Reports Server (NTRS)

Smith, Craig E.; Gyekenyesi, Andrew

2011-01-01

The majority of damage in SiC/SiC ceramic matrix composites subjected to monotonic tensile loads is in the form of distributed matrix cracks. These cracks initiate near stress concentrations, such as 90 deg fiber tows or large matrix pores and continue to accumulate with additional stress until matrix crack saturation is achieved. Such damage is difficult to detect with conventional nondestructive evaluation techniques (immersion ultrasonics, x-ray, etc.). Monitoring a specimen.s electrical resistance change provides an indirect approach for monitoring matrix crack density. Sylramic-iBN fiber- reinforced SiC composites with a melt infiltrated (MI) matrix were tensile tested at room temperature. Results showed an increase in resistance of more than 500% prior to fracture, which can be detected either in situ or post-damage. A relationship between resistance change and matrix crack density was also determined.

Detecting Cracks in Ceramic Matrix Composites by Electrical Resistance

NASA Technical Reports Server (NTRS)

Smith, Craig; Gyekenyesi, Andrew

2011-01-01

The majority of damage in SiC/SiC ceramic matrix composites subjected to monotonic tensile loads is in the form of distributed matrix cracks. These cracks initiate near stress concentrations, such as 90o fiber tows or large matrix pores and continue to accumulate with additional stress until matrix crack saturation is achieved. Such damage is difficult to detect with conventional nondestructive evaluation techniques (immersion ultrasonics, x-ray, etc.). Monitoring a specimen.s electrical resistance change provides an indirect approach for monitoring matrix crack density. Sylramic-iBN fiber- reinforced SiC composites with a melt infiltrated (MI) matrix were tensile tested at room temperature. Results showed an increase in resistance of more than 500% prior to fracture, which can be detected either in situ or post-damage. A relationship between resistance change and matrix crack density was also determined.

High Pressure Structure and Electrical Resistance Measurements on Cadmium Sulfide Nanoparticles

NASA Astrophysics Data System (ADS)

Montgomery, J. M.; Stemshorn, A. K.; Stanishevsky, A.; Vohra, Y. K.; Weir, S. T.

2010-03-01

Room-temperature four-probe electrical resistance and synchrotron x-ray diffraction measurements have been performed on dried and aqueous suspensions of CdS nanoparticles (25 nm in diameter) to 35 GPa. Nanoparticles used in these experiments were synthesized using the reaction between a cadmium salt and thiourea under hydrothermal conditions without using any surfactants. While the x-ray structure data confirms the irreversible wurtzite -> rocksalt transition seen at 2.5 GPa in bulk CdS, the corresponding resistance drop was not observed in the measured range, indicating that the nanoparticle boundaries may prevent electronic communication between particles. Further studies on dry and aqueous 10 nm nano-spheres and 9 nm diameter nano-rods are planned, and the results of these experiments will be presented.

Evaluation of Pd-Cr Wires for Strain Gage Application

NASA Technical Reports Server (NTRS)

Lei, Jih-Fen; Greer, L. C., III; Oberle, L. G.

1995-01-01

A newly developed alloy, palladium-13 weight percent chromium (Pd13Cr), was identified by United Technologies Research Center under a NASA contract to be the best material for high temperature strain gage applications. An electrical resistance strain gage that can provide accurate static strain measurement to a temperature higher than that of a commercially available gage is urgently needed in aerospace and aeronautics research. A strain gage made of a 25.4 micron (1 mil) diameter Pd13Cr wire has been recently demonstrated to be usable for static strain measurements to 800 C. This compares to the 400 C temperature limit of the commercially available strain gages. The performance of the Pd-Cr gage, however, strongly depends on the quality of the Pd13Cr wire. Four batches of Pd-Cr wires purchased from three different manufacturers were therefore evaluated to determine the best source of the wire for strain gage applications. The three suppliers were Precious Metal Institute in China, Sigmund Cohn Co., and G & S Titanium, Inc. in the United States. Two batches of wires obtained from Previous Metal Institute in 1987 and 1992, respectively are referred to herein as China87 and China92 wires. The mechanical, chemical and electrical properties of these wires, both as-received and after high temperature exposures at 800 C for 50 hours were analyzed. The elastic modulus and the failure strength of the wires were evaluated using a tensile test machine equipped with a laser speckle strain measurement system. The chemical and microstructural properties of the wires were inspected using a plasma atomic emission spectrometer and a scanning electron microscope (SEM) equipped with an energy dispersive X-ray spectroscope (EDS). The electrical stability and repeatability of the wires were determined by measuring the electrical resistance of the wires during three thermal cycles to 1000 C and a ten-hour soak at 1000 C. As a result of this study, the wire which has the highest strength, the least impurities content, the best oxidation resistance and the best electrical stability will be selected for upcoming strain gage applications.

Elevated transition temperature in Ge doped VO2 thin films

NASA Astrophysics Data System (ADS)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Thermoelectric properties of cerium monopnictides

NASA Technical Reports Server (NTRS)

Danielson, L. R.; Alexander, M. N.; Wood, C.; Lockwood, R. A.; Vandersande, J. W.

1987-01-01

Several cerium pnictides have been synthesized from the pure elements and hot pressed into test samples. Measurements of Seebeck coefficients and electrical resistivities were performed on these samples from room temperature to 1000 C. Cerium arsenide and cerium antimonide are n-type; cerium nitride changes from p-type to n-type conduction at 800 C. The materials are semimetals with resistivities below 1 mohm/cm. Cerium arsenide is the most favorable of the pnictides studied for high-temperature thermoelectric energy conversion, with an average power factor of 15 microW/cm K sq from 500 to 1000 C.

Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications

NASA Astrophysics Data System (ADS)

Ali, H. M.; Abd El-Raheem, M. M.; Megahed, N. M.; Mohamed, H. A.

2006-08-01

Aluminum-doped zinc oxide (AZO) thin films have been deposited by electron beam evaporation technique on glass substrates. The structural, electrical and optical properties of AZO films have been investigated as a function of annealing temperature. It was observed that the optical properties such as transmittance, reflectance, optical band gap and refractive index of AZO films were strongly affected by annealing temperature. The transmittance values of 84% in the visible region and 97% in the NIR region were obtained for AZO film annealed at 475 °C. The room temperature electrical resistivity of 4.6×10-3 Ω cm has been obtained at the same temperature of annealing. It was found that the calculated refractive index has been affected by the packing density of the thin films, whereas, the high annealing temperature gave rise to improve the homogeneity of the films. The single-oscillator model was used to analyze the optical parameters such as the oscillator and dispersion energies.

Tuning Thermoelectric Properties of Type I Clathrate K 8–x Ba x Al 8+x Si 38–x through Barium Substitution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sui, Fan; Kauzlarich, Susan M.

2016-05-10

The thermal stability and thermoelectric properties of type I clathrate K8Al8Si38 up to 873 K are reported. K8Al8Si38 possesses a high absolute Seebeck coefficient value and high electrical resistivity in the temperature range of 323 to 873 K, which is consistent with previously reported low temperature thermoelectric properties. Samples with Ba partial substitution at the K guest atom sites were synthesized from metal hydride precursors. The samples with the nominal chemical formula of K8–xBaxAl8+xSi38–x (x = 1, 1.5, 2) possess type I clathrate structure (cubic, Pm3n), confirmed by X-ray diffraction. The guest atom site occupancies and thermal motions were investigatedmore » with Rietveld refinement of synchrotron powder X-ray diffraction. Transport properties of Ba-containing samples were characterized from 2 to 300 K. The K–Ba alloy phases showed low thermal conductivity and improved electrical conductivity compared to K8Al8Si38. Electrical resistivity and Seebeck coefficients were measured over the temperature range of 323 to 873 K. Thermal conductivity from 323 to 873 K was estimated from the Wiedemann–Franz relation and lattice thermal conductivity extrapolation from 300 to 873 K. K8–xBaxAl8+xSi38–x (x = 1, 1.5) synthesized with Al deficiency showed enhanced electrical conductivity, and the absolute Seebeck coefficients decrease with the increased carrier concentration. When x = 2, the Al content increases toward the electron balanced composition, and the electrical resistivity increases with the decreasing charge carrier concentration. Overall, K6.5Ba1.5Al9Si37 achieves an enhanced zT of 0.4 at 873 K.« less

Time-lapse electrical resistivity imaging of the thermally affected zone of a Borehole Thermal Energy Storage system near Torino (Northern Italy)

NASA Astrophysics Data System (ADS)

Giordano, N.; Arato, A.; Comina, C.; Mandrone, G.

2017-05-01

A Borehole Thermal Energy Storage living lab was built up nearby Torino (Northern Italy). This living lab aims at testing the ability of the alluvial deposits of the north-western Po Plain to store the thermal energy collected by solar thermal panels and the efficiency of energy storage systems in this climatic context. Different monitoring approaches have been tested and analyzed since the start of the thermal injection in April 2014. Underground temperature monitoring is constantly undertaken by means of several temperature sensors located along the borehole heat exchangers and within the hydraulic circuit. Nevertheless, this can provide only pointwise information about underground temperature distribution. For this reason, a geophysical approach is proposed in order to image the thermally affected zone (TAZ) caused by the heat injection: surface electrical resistivity measurements were carried out with this purpose. In the present paper, results of time-lapse acquisitions during a heating day are reported with the aim of imaging the thermal plume evolution within the subsoil. Resistivity data, calibrated on local temperature measurements, have shown their potentiality in imaging the heated plume of the system and depicting its evolution throughout the day. Different types of data processing were adopted in order to face issues mainly related to a highly urbanized environment. The use of apparent resistivity proved to be in valid agreement with the results of different inversion approaches. The inversion processes did not significantly improve the qualitative and quantitative TAZ imaging in comparison to the pseudo-sections. This suggested the usefulness of apparent resistivity data alone for a rough monitoring of TAZ in this kind of applications.

Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects

NASA Astrophysics Data System (ADS)

Takamiya, Saburo; Sonoda, Takuji; Yamanouchi, Masahide; Fujioka, Takashi; Kohno, Masaki

1997-03-01

Theoretical expressions for thermal and electrical feedback effects are derived. These limit the power capability of a power FET and lead a device to catastrophic breakdown (source-drain burnout) when the loop gain of the former reaches unity. Field emission of thermally excited electrons at the Schottky gate plays the key role in thermal feedback, while holes being impact ionized by the drain current play a similar role in the electrical feedback. Thermal feedback is dominant in a high temperature and low drain voltage area. Electrical feedback is dominant in a high drain voltage and low temperature area. In the first area, a high junction temperature is the main factor causing the thermal runaway of the device. In the second area, the electrcal feedback increases the drain current and the temperature and gives a trigger to the thermal feedback so that it reaches unity more easily. Both effects become significant in proportion to transconductance and gate bias resistance, and cause simultaneous runaway of the gate and drain currents. The expressions of the loop gains clearly indicate the safe operating conditions for a power FET. C-band 4 W (1 chip) and 16 W (4 chip) GaAs MESFETs were used as the experimental samples. With these devices the simultaneous runaway of the gate and the drain currents, apparent dependence of the three teminal breakdown voltage on the gate bias resistance in the region dominated by electrical feedback, the rapid increase of the field emitted current at the critical temperature and clear coincidence between the measured and calculated three terminal gate currents both in the thermal feedback dominant region, etc. are demonstrated. The theory explains the experimental results well.

A nonintrusive method for measuring the operating temperature of a solenoid-operated valve

NASA Astrophysics Data System (ADS)

Kryter, Robert C.

Experimental data are presented to show that the in-service operating temperature of a solenoid operated valve (SOV) can be inferred simply and nondisruptively by using the copper winding of the solenoid coil as a self-indicating, permanently available resistance thermometer. The principal merits of this approach include: (1) there is no need for an add-on temperature sensor, (2) the true temperature of a critical and likely the hottest, part of the SOV (namely, the electrical coil) is measured directly, (3) temperature readout can be provided at any location at which the SOV electrical lead wires are accessible (even though remote from the valve), (4) the SOV need not be disturbed (whether normally energized or deenergized) to measure its temperature in situ, and (5) the method is applicable to all types of SOVs, large and small, ac- and dc-powered. Laboratory tests comparing temperatures measured both by coil resistance and by a conventional thermometer placed in contact with the external surface of the potted solenoid coil indicate that temperature within the coil may be on the order of 40 C higher than that measured externally, a fact that is important to life-expectancy calculations made on the basis of Arrhenius theory. Field practicality is illustrated with temperature measurements made using this method on a SOV controlling the flow of refrigerant in a large chilled-water air-conditioning system.

A new computer-aided simulation model for polycrystalline silicon film resistors

NASA Astrophysics Data System (ADS)

Ching-Yuan Wu; Weng-Dah Ken

1983-07-01

A general transport theory for the I-V characteristics of a polycrystalline film resistor has been derived by including the effects of carrier degeneracy, majority-carrier thermionic-diffusion across the space charge regions produced by carrier trapping in the grain boundaries, and quantum mechanical tunneling through the grain boundaries. Based on the derived transport theory, a new conduction model for the electrical resistivity of polycrystalline film resitors has been developed by incorporating the effects of carrier trapping and dopant segregation in the grain boundaries. Moreover, an empirical formula for the coefficient of the dopant-segregation effects has been proposed, which enables us to predict the dependence of the electrical resistivity of phosphorus-and arsenic-doped polycrystalline silicon films on thermal annealing temperature. Phosphorus-doped polycrystalline silicon resistors have been fabricated by using ion-implantation with doses ranged from 1.6 × 10 11 to 5 × 10 15/cm 2. The dependence of the electrical resistivity on doping concentration and temperature have been measured and shown to be in good agreement with the results of computer simulations. In addition, computer simulations for boron-and arsenic-doped polycrystalline silicon resistors have also been performed and shown to be consistent with the experimental results published by previous authors.

Opto-electrochemical spectroscopy of metals in aqueous solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Habib, K., E-mail: khaledhabib@usa.net

In the present investigation, holographic interferometry was utilized for the first time to determine the rate change of the electrical resistance of aluminium samples during the initial stage of anodisation processes in aqueous solution. In fact, because the resistance values in this investigation were obtained by holographic interferometry, electromagnetic method rather than electronic method, the abrupt rate change of the resistance was called electrical resistance–emission spectroscopy. The anodisation process of the aluminium samples was carried out by electrochemical impedance spectroscopy (EIS) in different sulphuric acid concentrations (1.0%–2.5% H{sub 2}SO{sub 4}) at room temperature. In the meantime, the real time holographicmore » interferometry was used to determine the difference between the electrical resistance of two subsequent values, dR, as a function of the elapsed time of the EIS experiment for the aluminium samples in 1.0%, 1.5%, 2.0%, and 2.5% H{sub 2}SO{sub 4} solutions. The electrical resistance–emission spectra of the present investigation represent a detailed picture of not only the rate change of the electrical resistance throughout the anodisation processes but also the spectra represent the rate change of the growth of the oxide films on the aluminium samples in different solutions. As a result, a new spectrometer was developed based on the combination of the holographic interferometry and electrochemical impedance spectroscopy for studying in situ the electrochemical behavior of metals in aqueous solutions.« less

Detailed investigation of thermal and electron transport properties in strongly correlated compound Ce6Pd12In5 and its nonmagnetic analog La6Pd12In5

NASA Astrophysics Data System (ADS)

Falkowski, M.; Krychowski, D.; Strydom, A. M.

2016-11-01

An in-depth study of thermal and electron transport properties including thermal conductivity κ(T), thermoelectric power S(T), and electrical resistivity ρ(T) of the heavy fermion Kondo lattice Ce6Pd12In5 and its nonmagnetic reference compound La6Pd12In5 is presented. The absolute κ(T) value of Ce6Pd12In5 is smaller that than of La6Pd12In5, which indicates that conduction electron-4f electron scattering has a large impact on the reduction of thermal conductivity. The isolated 4f electron contributions to the electrical resistivity ρ 4 f (T), electronic thermal resistivity displayed in the form W e l , 4 f (T) .T, and thermoelectric power S 4 f (T) reveal a low- and high-temperature -lnT behaviour characteristic of Kondo systems with strong crystal-electric field (CEF) interactions. The analysis of phonon scattering processes of lattice thermal conductivity κph(T) in (Ce, La)6Pd12In5 was performed over the whole accessible temperature range according to the Callaway model. In the scope of a theoretical approach based on the perturbation type calculation, we were able to describe our experimental data of ρ 4 f (T) and W e l , 4 f (T) .T by using the model incorporating simultaneously the Kondo effect in the presence of the CEF splitting, as it is foreseen in the framework of the Cornut-Coqblin and Bhattacharjee-Coqblin theory. Considering the fact that there are not many cases of similar studies at all, we also show the numerical calculations of temperature-dependent behaviour of spin-disorder resistivity ρs(T), magnetic resistivity ρ 4 f (T), and occupation number ⟨ N i ⟩ due to the various types of degeneracy of the ground state multiplet of Ce 3 + (J = 5/2).

Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force Microscopy

NASA Astrophysics Data System (ADS)

Slobodian, Oleksandr M.; Lytvyn, Peter M.; Nikolenko, Andrii S.; Naseka, Victor M.; Khyzhun, Oleg Yu.; Vasin, Andrey V.; Sevostianov, Stanislav V.; Nazarov, Alexei N.

2018-05-01

Graphene oxide (GO) films were formed by drop-casting method and were studied by FTIR spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning Kelvin probe force (SKPFM) microscopy after low-temperature annealing at ambient conditions. It was shown that in temperature range from 50 to 250 °C the electrical resistivity of the GO films decreases by seven orders of magnitude and is governed by two processes with activation energies of 6.22 and 1.65 eV, respectively. It was shown that the first process is mainly associated with water and OH groups desorption reducing the thickness of the film by 35% and causing the resistivity decrease by five orders of magnitude. The corresponding activation energy is the effective value determined by desorption and electrical connection of GO flakes from different layers. The second process is mainly associated with desorption of oxygen epoxy and alkoxy groups connected with carbon located in the basal plane of GO. AFM and SKPFM methods showed that during the second process, first, the surface of GO plane is destroyed forming nanostructured surface with low work function and then at higher temperature a flat carbon plane is formed that results in an increase of the work function of reduced GO.

Processing and electrical properties of gallium-substituted lead zirconate titanate ceramics

NASA Astrophysics Data System (ADS)

Hajra, Sugato; Sharma, Pulkit; Sahoo, Sushrisangita; Rout, P. K.; Choudhary, R. N. P.

2017-12-01

In the present paper, the effect of gallium (Ga) substitution on structural, microstructural, electrical conductivity of Pb(ZrTi)O3 (PZT) in the morphotropic phase boundary (MPB) region (i.e., Pb0.96Ga0.04(Zr0.48Ti0.52)0.99O3 (PGaZT-4)) was investigated. Increased grain density increases the resistivity of the Ga-modified PZT system. Preliminary structural analysis using X-ray diffraction pattern and data showed the existence of two phases [major tetragonal (T) and minor monoclinic (M)]. Field emission scanning electron micrograph (FESEM) showed the distribution of spherical as well as platelet type grains with small pores. The behavior of dielectric constant with temperature of PGaZT-4 exhibited the suppression of the ferroelectric phase transition [i.e., disappearance of Curie temperature ( T c)]. The complex impedance spectroscopy (CIS) technique helped to investigate the impedance parameters of PGaZT-4 in MPB region in a wide range of temperature (250-500 °C) and frequency (1-1000 kHz) region. The impedance parameters of the material are found to be strongly dependent on frequency of AC electric field and temperature. The substitution of gallium at the Pb site of PZT generally enhances the dielectric constant and decreases loss tangent. The AC conductivity vs frequency ( f = ω2 π) in the region of dispersion follows the universal response of Jonscher's equation. Enhanced resistive characteristics were observed for Ga-substituted PZT in comparison to the pure PZT, which was well ensured from the studies of electrical parameters, such as impedance and AC conductivity.

Rapid fluid disruption: A source for self-potential anomalies on volcanoes

USGS Publications Warehouse

Johnston, M.J.S.; Byerlee, J.D.; Lockner, D.

2001-01-01

Self-potential (SP) anomalies observed above suspected magma reservoirs, dikes, etc., on various volcanoes (Kilauea, Hawaii; Mount Unzen, Japan; Piton de la Fournaise, Reunion Island, Miyake Jima, Japan) result from transient surface electric fields of tens of millivolts per kilometer and generally have a positive polarity. These SP anomalies are usually attributed to electrokinetic effects where properties controlling this process are poorly constrained. We propose an alternate explanation that contributions to electric fields of correct polarity should be expected from charge generation by fluid vaporization/disruption. As liquids are vaporized or removed as droplets by gas transport away from hot dike intrusions, both charge generation and local increase in electrical resistivity by removal of fluids should occur. We report laboratory observations of electric fields in hot rock samples generated by pulses of fluid (water) through the rock at atmospheric pressure. These indicate the relative amplitudes of rapid fluid disruption (RFD) potentials and electrokinetic potentials to be dramatically different and the signals are opposite in sign. Above vaporization temperatures, RFD effects of positive sign in the direction of gas flow dominate, whereas below these temperatures, effects of negative sign dominate. This suggests that the primary contribution to observed self-potential anomalies arises from gas-related charge transport processes at temperatures high enough to produce vigorous boiling and vapor transport. At lower temperatures, the primary contribution is from electrokinetic effects modulated perhaps by changing electrical resistivity and RFD effects from high-pressure but low-temperature CO2 and SO2 gas flow ripping water molecules from saturated crustal rocks. If charge generation is continuous, as could well occur above a newly emplaced dike, positive static potentials will be set up that could be sustained for many years, and the simplest method for identifying these hot, active regions would be to identify the SP anomalies they generate.

Nanocomposite Strain Gauges Having Small TCRs

NASA Technical Reports Server (NTRS)

Gregory, Otto; Chen, Ximing

2009-01-01

Ceramic strain gauges in which the strain-sensitive electrically conductive strips made from nanocomposites of noble metal and indium tin oxide (ITO) are being developed for use in gas turbine engines and other power-generation systems in which gas temperatures can exceed 1,500 F (about 816 C). In general, strain gauges exhibit spurious thermally induced components of response denoted apparent strain. When temperature varies, a strain-gauge material that has a nonzero temperature coefficient of resistance (TCR) exhibits an undesired change in electrical resistance that can be mistaken for the change in resistance caused by a change in strain. It would be desirable to formulate straingauge materials having TCRs as small as possible so as to minimize apparent strain. Most metals exhibit positive TCRs, while most semiconductors, including ITO, exhibit negative TCRs. The present development is based on the idea of using the negative TCR of ITO to counter the positive TCRs of noble metals and of obtaining the benefit of the ability of both ITO and noble metals to endure high temperatures. The noble metal used in this development thus far has been platinum. Combinatorial libraries of many ceramic strain gauges containing nanocomposites of various proportions of ITO and platinum were fabricated by reactive co-sputtering from ITO and platinum targets onto alumina- and zirconia-based substrates mounted at various positions between the targets.

Physical analysis of an electric resistor heating

NASA Astrophysics Data System (ADS)

Perea Martins, J. E. M.

2018-05-01

This work describes a simple experiment to measure the resistor temperature as a function of the applied power and proves that it is an efficient way to introduce some important physical concepts in classroom, including the Joule’s first law, hot-spot temperature, thermal resistance, thermal dissipation constant, time constant and the Newton’s law of cooling.

Influence of Al3+ substitution on the electrical resistivity and dielectric behavior of Ni0.25Cu0.20Zn0.55AlxFe2-xO4 ferrites synthesized by solid state reaction technique

NASA Astrophysics Data System (ADS)

Rahman, K. R.; Chowdhury, F.-U.-Z.; Khan, M. N. I.

2017-12-01

In this paper, the effect of Al3+ substitution on the electrical and dielectric properties of Ni0.25Cu0.20Zn0.55AlxFe2-xO4 ferrites with x = 0.0, 0.05. 0.10, 0.15 and 0.20, synthesized by solid state reaction has been reported. Using two probe method, the DC resistivity has been investigated in the temperature range from 30 °C to 300 °C. Activation energy was calculated from the Arrhenius plot. The electrical conduction is explained on the basis of the hopping mechanism. The frequency dependent dielectric properties of these spinel ferrites have been studied at room temperature by measuring AC resistivity, conductivity (σac), dielectric constant and dielectric loss tangent (tan δ) in the frequency range between 1 kHz and 120 MHz. The study of dielectric properties showed that the dielectric constant and dielectric loss increased with increasing non-magnetic Al ions. The dependence of dielectric constant with frequency has been explained by Maxwell-Wagner interfacial polarization. Cole-Cole plots show semicircular arc(s) for the samples, and equivalent RC circuits have been proposed to clarify the phenomena involved therein. The analysis of complex impedance spectroscopy has been used to distinguish between the grain and grain boundary contribution to the total resistance.

Electrical and absorption properties of fresh cassava tubers and cassava starch

NASA Astrophysics Data System (ADS)

Harnsoongnoen, S.; Siritaratiwat, A.

2015-09-01

The objective of this study was to analyze the electrical and absorption properties of fresh cassava tubers and cassava starch at various frequencies using electric impedance spectroscopy and near-infrared spectroscopy, as well as determine the classification of the electrical parameters of both materials using the principle component analysis (PCA) method. All samples were measured at room temperature. The electrical and absorption parameters consisted of dielectric constant, dissipation factor, parallel capacitance, resistance, reactance, impedance and absorbance. It was found that the electrical and absorption properties of fresh cassava tubers and cassava starch were a function of frequency, and there were significant differences between the materials. The dielectric constant, parallel capacitance, resistance and impedance of fresh cassava tubers and cassava starch had similar dramatic decreases with increasing frequency. However, the reactance of both materials increased with an increasing frequency. The electrical parameters of both materials could be classified into two groups. Moreover, the dissipation factor and phase of impedance were the parameters that could be used in the separation of both materials. According to the absorbance patterns of the fresh cassava tubers and cassava starch, there were significant differences.

Temperature Dependence of Electrical and Thermal Conduction in Single Silver Nanowire

DTIC Science & Technology

2015-06-02

Methods section. After knowing the geometrical sizes of the films, the electrical resistivity can be calculated . The temper- ature dependent electrical...plane spacing for peaks (111), (220) and (311) are 2.3616 Å, 1.4518 Å and 1.2287 Å respectively. The corresponding lattice constant can be calculated ...21 nm). So the upper limit of the thermal conductivity ( C vl 3ph vκ = /, ) is calculated as 12.3 W/K·m at 36 K. The phonon mean free path should

Temperature dependent electrical properties of rare-earth metal Er Schottky contact on p-type InP

NASA Astrophysics Data System (ADS)

Rao, L. Dasaradha; Reddy, N. Ramesha; Kumar, A. Ashok; Reddy, V. Rajagopal

2013-06-01

The current-voltage (I-V) characteristics of the Er/p-InP Schottky barrier diodes (SBDs) have been investigated in the temperature range of 300-400K in steps of 25K. The electrical parameters such as ideality factor (n) and zero-bias barrier height (Φbo) are found to be strongly temperature dependent. It is observed that ΦI-V decreases whereas n increases with decreasing temperature. The series resistance is also calculated from the forward I-V characteristics of Er/p-InP SBD and it is found to be strongly dependent on temperature. Further, the temperature dependence of energy distribution of interface state density (NSS) profiles is determined from the forward I-V measurements by taking into account the bias dependence of the effective barrier height and ideality factor. It is observed that the NSS values increase with a decrease in temperature.

An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach

NASA Astrophysics Data System (ADS)

Aldana, S.; Roldán, J. B.; García-Fernández, P.; Suñe, J.; Romero-Zaliz, R.; Jiménez-Molinos, F.; Long, S.; Gómez-Campos, F.; Liu, M.

2018-04-01

A simulation tool based on a 3D kinetic Monte Carlo algorithm has been employed to analyse bipolar conductive bridge RAMs fabricated with Cu/HfOx/Pt stacks. Resistive switching mechanisms are described accounting for the electric field and temperature distributions within the dielectric. The formation and destruction of conductive filaments (CFs) are analysed taking into consideration redox reactions and the joint action of metal ion thermal diffusion and electric field induced drift. Filamentary conduction is considered when different percolation paths are formed in addition to other conventional transport mechanisms in dielectrics. The simulator was tuned by using the experimental data for Cu/HfOx/Pt bipolar devices that were fabricated. Our simulation tool allows for the study of different experimental results, in particular, the current variations due to the electric field changes between the filament tip and the electrode in the High Resistance State. In addition, the density of metallic atoms within the CF can also be characterized along with the corresponding CF resistance description.

Role of Firing Temperature, Sheet Resistance, and Contact Area in Contact Formation on Screen-Printed Metal Contact of Silicon Solar Cell

NASA Astrophysics Data System (ADS)

Ahmad, Samir Mahmmod; Leong, Cheow Siu; Sopian, K.; Zaidi, Saleem H.

2018-03-01

Formation of an Ohmic contact requires a suitable firing temperature, appropriate doping profile, and contact dimensions within resolution limits of the screen-printing process. In this study, the role of the peak firing temperature in standard rapid thermal annealing (RTA) six-zone conveyor belt furnace (CBF) and two inexpensive alternate RTA systems [a custom-designed, three-zone, 5″-diameter quartz tube furnace (QTF) and a tabletop, 3″-diameter rapid thermal processing (RTP)] has been investigated. In addition, the role of sheet resistance and contact area in achieving low-resistance ohmic contacts has been examined. Electrical measurements of ohmic contacts between silver paste/ n +-emitter layer with varying sheet resistances and aluminum paste/ p-doped wafer were carried out in transmission line method configuration. Experimental measurements of the contact resistivity ( ρ c) exhibited the lowest values for CBF at 0.14 mΩ cm2 for Ag and 100 mΩ cm2 for Al at a peak firing temperature of 870°C. For the QTF configuration, lowest measured contact resistivities were 3.1 mΩ cm2 for Ag and 74.1 mΩ cm2 for Al at a peak firing temperature of 925°C. Finally, for the RTP configuration, lowest measured contact resistivities were 1.2 mΩ cm2 for Ag and 68.5 mΩ cm2 for Al at a peak firing temperature of 780°C. The measured contact resistivity exhibits strong linear dependence on sheet resistance. The contact resistivity for Ag decreases with contact area, while for Al the opposite behavior is observed.

Conjugated polymer/graphene oxide nanocomposite as thermistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, Girish M., E-mail: varadgm@gmail.com; Deshmukh, Kalim

2015-06-24

We demonstrated the synthesis and measurement of temperature dependent electrical resistivity of graphene oxide (GO) reinforced poly (3, 4 - ethylenedioxythiophene) - tetramethacrylate (PEDOTTMA)/Polymethylmethacrylate (PMMA) based nanocomposites. Negative temperature coefficient (NTC) was observed for 0.5, 1 % GO loading and the positive temperature coefficient (PTC) was observed for 1.5 and 2 % Go loading in the temperature (40 to 120 °C). The GO inducted nanocomposite perform as an excellent thermistor and suitable for electronic and sensor domain.