EMI/EMP Resistant Data Bus

DTIC Science & Technology

1976-09-01

Control Multiplex Terminal Unit (CMTU) 1 each MTU Test Set 2 each CMTU Test Set 1 each 9 port Radial Coupler 1 each Fiber Optics Radial...Introduction 3 2 . MTU 11 3. CMTU 1 ? 4. SSIU and Controller ?! 5. Optical Data Bus 21 II System Design Construction 24 1 . Optoelectronic...8217 TABLE OF CONTENTS (Continued) SECTION TITLE PAGE IV System Test and Operation 1 . Test Equipment 2 . Evaluation a. Optical Bus b. Optoelectronic

Photonics

NASA Technical Reports Server (NTRS)

1991-01-01

Optoelectronic materials and devices are examined. Optoelectronic devices, which generate, detect, modulate, or switch electromagnetic radiation are being developed for a variety of space applications. The program includes spatial light modulators, solid state lasers, optoelectronic integrated circuits, nonlinear optical materials and devices, fiber optics, and optical networking photovoltaic technology and optical processing.

Advanced educational program in optoelectronics for undergraduates and graduates in electronics

NASA Astrophysics Data System (ADS)

Vladescu, Marian; Schiopu, Paul

2015-02-01

The optoelectronics education included in electronics curricula at Faculty of Electronics, Telecommunications and Information Technology of "Politehnica" University of Bucharest started in early '90s, and evolved constantly since then, trying to address the growing demand of engineers with a complex optoelectronics profile and to meet the increased requirements of microelectronics, optoelectronics, and lately nanotechnologies. Our goal is to provide a high level of theoretical background combined with advanced experimental tools in laboratories, and also with simulation platforms. That's why we propose an advanced educational program in optoelectronics for both grades of our study program, bachelor and master.

Synthesis, structure, and optoelectronic properties of II-IV-V 2 materials

DOE PAGES

Martinez, Aaron D.; Fioretti, Angela N.; Toberer, Eric S.; ...

2017-03-07

II-IV-V 2 materials offer the promise of enhanced functionality in optoelectronic devices due to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic devices based on nitride, phosphide, and arsenide II-IV-V 2 materials. As ternary analogs to the III-V materials, these compounds share many of the attractive features that have made the III-Vs the basis of modern optoelectronic devices (e.g. high mobility, strong optical absorption). Control of cation order parameter in the II-IV-V 2 materials can produce significant changes in optoelectronic properties at fixed chemical composition, including decoupling band gap from lattice parameter. Recent progressmore » has begun to resolve outstanding questions concerning the structure, dopability, and optical properties of the II-IV-V 2 materials. Furthermore, remaining research challenges include growth optimization and integration into heterostructures and devices.« less

Current Total Ionizing Dose Results and Displacement Damage Results for Candidate Spacecraft Electronics for NASA

NASA Technical Reports Server (NTRS)

Cochran, Donna J.; Kniffin, Scott D.; LaBel, Kenneth A.; OBryan, Martha V.; Reed, Robert A.; Ladbury, Ray L.; Howard, James W., Jr.; Poivey, Christian; Buchner, Stephen P.; Marshall, Cheryl J.

2004-01-01

We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to-Digital Converters (ADCs), and Digital-to-Analog Converters (DACS), among others.

Total Ionizing Dose Results and Displacement Damage Results for Candidate Spacecraft Electronics for NASA

NASA Technical Reports Server (NTRS)

Cochran, Donna J.; Kniffin, Scott D.; LaBel, Kenneth A.; OBryan, Martha V.; Reed, Robert A.; Ladbury, Ray L.; Howard, James W., Jr.; Poivey, Christian; Buchner, Stephen P.; Marshall, Cheryl J.

2003-01-01

We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to-Digital Converters (ADCs), and Digital-to-Analog Converters (DACs), among others.

Attenuator And Conditioner

DOEpatents

Anderson, Gene R.; Armendariz, Marcelino G.; Carson, Richard F.; Bryan, Robert P.; Duckett, III, Edwin B.; Kemme, Shanalyn Adair; McCormick, Frederick B.; Peterson, David W.

2006-04-04

An apparatus and method of attenuating and/or conditioning optical energy for an optical transmitter, receiver or transceiver module is disclosed. An apparatus for attenuating the optical output of an optoelectronic connector including: a mounting surface; an array of optoelectronic devices having at least a first end; an array of optical elements having at least a first end; the first end of the array of optical elements optically aligned with the first end of the array of optoelectronic devices; an optical path extending from the first end of the array of optoelectronic devices and ending at a second end of the array of optical elements; and an attenuator in the optical path for attenuating the optical energy emitted from the array of optoelectronic devices. Alternatively, a conditioner may be adapted in the optical path for conditioning the optical energy emitted from the array of optoelectronic devices.

Recent Total Ionizing Dose Results and Displacement Damage Results for Candidate Spacecraft Electronics for NASA

NASA Technical Reports Server (NTRS)

Cochran, Donna J.; Buchner, Stephen P.; Irwin, Tim L.; LaBel, Kenneth A.; Marshall, Cheryl J.; Reed, Robert A.; Sanders, Anthony B.; Hawkins, Donald K.; Flanigan, Ryan J.; Cox, Stephen R.

2005-01-01

We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to- Digital Converters (ADCs), and Digital-to-Analog Converters (DACs), among others. T

Laser Opto-Electronic Correlator for Robotic Vision Automated Pattern Recognition

NASA Technical Reports Server (NTRS)

Marzwell, Neville

1995-01-01

A compact laser opto-electronic correlator for pattern recognition has been designed, fabricated, and tested. Specifically it is a translation sensitivity adjustable compact optical correlator (TSACOC) utilizing convergent laser beams for the holographic filter. Its properties and performance, including the location of the correlation peak and the effects of lateral and longitudinal displacements for both filters and input images, are systematically analyzed based on the nonparaxial approximation for the reference beam. The theoretical analyses have been verified in experiments. In applying the TSACOC to important practical problems including fingerprint identification, we have found that the tolerance of the system to the input lateral displacement can be conveniently increased by changing a geometric factor of the system. The system can be compactly packaged using the miniature laser diode sources and can be used in space by the National Aeronautics and Space Administration (NASA) and ground commercial applications which include robotic vision, and industrial inspection of automated quality control operations. The personnel of Standard International will work closely with the Jet Propulsion Laboratory (JPL) to transfer the technology to the commercial market. Prototype systems will be fabricated to test the market and perfect the product. Large production will follow after successful results are achieved.

Multi-Axis Force/Torque Sensor Based on Simply-Supported Beam and Optoelectronics.

PubMed

Noh, Yohan; Bimbo, Joao; Sareh, Sina; Wurdemann, Helge; Fraś, Jan; Chathuranga, Damith Suresh; Liu, Hongbin; Housden, James; Althoefer, Kaspar; Rhode, Kawal

2016-11-17

This paper presents a multi-axis force/torque sensor based on simply-supported beam and optoelectronic technology. The sensor's main advantages are: (1) Low power consumption; (2) low-level noise in comparison with conventional methods of force sensing (e.g., using strain gauges); (3) the ability to be embedded into different mechanical structures; (4) miniaturisation; (5) simple manufacture and customisation to fit a wide-range of robot systems; and (6) low-cost fabrication and assembly of sensor structure. For these reasons, the proposed multi-axis force/torque sensor can be used in a wide range of application areas including medical robotics, manufacturing, and areas involving human-robot interaction. This paper shows the application of our concept of a force/torque sensor to flexible continuum manipulators: A cylindrical MIS (Minimally Invasive Surgery) robot, and includes its design, fabrication, and evaluation tests.

Multi-Axis Force/Torque Sensor Based on Simply-Supported Beam and Optoelectronics

PubMed Central

Noh, Yohan; Bimbo, Joao; Sareh, Sina; Wurdemann, Helge; Fraś, Jan; Chathuranga, Damith Suresh; Liu, Hongbin; Housden, James; Althoefer, Kaspar; Rhode, Kawal

2016-01-01

This paper presents a multi-axis force/torque sensor based on simply-supported beam and optoelectronic technology. The sensor’s main advantages are: (1) Low power consumption; (2) low-level noise in comparison with conventional methods of force sensing (e.g., using strain gauges); (3) the ability to be embedded into different mechanical structures; (4) miniaturisation; (5) simple manufacture and customisation to fit a wide-range of robot systems; and (6) low-cost fabrication and assembly of sensor structure. For these reasons, the proposed multi-axis force/torque sensor can be used in a wide range of application areas including medical robotics, manufacturing, and areas involving human–robot interaction. This paper shows the application of our concept of a force/torque sensor to flexible continuum manipulators: A cylindrical MIS (Minimally Invasive Surgery) robot, and includes its design, fabrication, and evaluation tests. PMID:27869689

2D Organic Materials for Optoelectronic Applications.

PubMed

Yang, Fangxu; Cheng, Shanshan; Zhang, Xiaotao; Ren, Xiaochen; Li, Rongjin; Dong, Huanli; Hu, Wenping

2018-01-01

The remarkable merits of 2D materials with atomically thin structures and optoelectronic attributes have inspired great interest in integrating 2D materials into electronics and optoelectronics. Moreover, as an emerging field in the 2D-materials family, assembly of organic nanostructures into 2D forms offers the advantages of molecular diversity, intrinsic flexibility, ease of processing, light weight, and so on, providing an exciting prospect for optoelectronic applications. Herein, the applications of organic 2D materials for optoelectronic devices are a main focus. Material examples include 2D, organic, crystalline, small molecules, polymers, self-assembly monolayers, and covalent organic frameworks. The protocols for 2D-organic-crystal-fabrication and -patterning techniques are briefly discussed, then applications in optoelectronic devices are introduced in detail. Overall, an introduction to what is known and suggestions for the potential of many exciting developments are presented. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Recent Radiation Damage and Single Event Effect Results for Candidate Spacecraft Electronics

NASA Technical Reports Server (NTRS)

OBryan, Martha V.; LaBel, Kenneth A.; Reed, Robert A.; Ladbury, Ray L.; Howard, James W., Jr.; Buchner, Stephen P.; Barth, Janet L.; Kniffen, Scott D.; Seidleck, Christina M.; Marshall, Cheryl J.;

Current Single Event Effects and Radiation Damage Results for Candidate Spacecraft Electronics

NASA Technical Reports Server (NTRS)

OBryan, Martha V.; LaBel, Kenneth A.; Reed, Robert A.; Ladbury, Ray L.; Howard, James W., Jr.; Kniffin, Scott D.; Poivey, Christian; Buchner, Stephen P.; Bings, John P.; Titus, Jeff L.

2002-01-01

We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, total ionizing dose and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.

Stereoscopic construction and practice of optoelectronic technology textbook

NASA Astrophysics Data System (ADS)

Zhou, Zigang; Zhang, Jinlong; Wang, Huili; Yang, Yongjia; Han, Yanling

2017-08-01

It is a professional degree course textbook for the Nation-class Specialty—Optoelectronic Information Science and Engineering, and it is also an engineering practice textbook for the cultivation of photoelectric excellent engineers. The book seeks to comprehensively introduce the theoretical and applied basis of optoelectronic technology, and it's closely linked to the current development of optoelectronic industry frontier and made up of following core contents, including the laser source, the light's transmission, modulation, detection, imaging and display. At the same time, it also embodies the features of the source of laser, the transmission of the waveguide, the electronic means and the optical processing methods.

Study of optoelectronic switch for satellite-switched time-division multiple access

NASA Technical Reports Server (NTRS)

Su, Shing-Fong; Jou, Liz; Lenart, Joe

1987-01-01

The use of optoelectronic switching for satellite switched time division multiple access will improve the isolation and reduce the crosstalk of an IF switch matrix. The results are presented of a study on optoelectronic switching. Tasks include literature search, system requirements study, candidate switching architecture analysis, and switch model optimization. The results show that the power divided and crossbar switching architectures are good candidates for an IF switch matrix.

Curriculum optimization of College of Optical Science and Engineering

NASA Astrophysics Data System (ADS)

Wang, Xiaoping; Zheng, Zhenrong; Wang, Kaiwei; Zheng, Xiaodong; Ye, Song; Zhu, Yuhui

2017-08-01

The optimized curriculum of College of Optical Science and Engineering is accomplished at Zhejiang University, based on new trends from both research and industry. The curriculum includes general courses, foundation courses such as mathematics and physics, major core courses, laboratory courses and several module courses. Module courses include optical system designing, optical telecommunication, imaging and vision, electronics and computer science, optoelectronic sensing and metrology, optical mechanics and materials, basics and extension. These curricula reflect the direction of latest researches and relates closely with optoelectronics. Therefore, students may combine flexibly compulsory courses with elective courses, and establish the personalized curriculum of "optoelectronics + X", according to their individual strengths and preferences.

Optoelectronic devices utilizing materials having enhanced electronic transitions

DOEpatents

Black, Marcie R [Newton, MA

2011-02-22

An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Optoelectronic devices utilizing materials having enhanced electronic transitions

DOEpatents

Black, Marcie R.

2013-04-09

An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Optoelectronic device with nanoparticle embedded hole injection/transport layer

DOEpatents

Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

2012-01-03

An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

Readout systems for inner detectors at the LHC and SLHC

NASA Astrophysics Data System (ADS)

Issever, Cigdem

2006-12-01

A general overview of the optoelectronic readout and control systems of the ATLAS and CMS inner detectors is given. The talk will also cover challenges and issues of future optoelectronic readout systems at the upgraded LHC (SLHC). First results of radiation tests of VCSELs and optical fibres which were irradiated up to SLHC fluences will be presented.

High-speed noncontacting instrumentation for jet engine testing

NASA Astrophysics Data System (ADS)

Scotto, M. J.; Eismeier, M. E.

1980-03-01

This paper discusses high-speed, noncontacting instrumentation systems for measuring the operating characteristics of jet engines. The discussion includes optical pyrometers for measuring blade surface temperatures, capacitance clearanceometers for measuring blade tip clearance and vibration, and optoelectronic systems for measuring blade flex and torsion. In addition, engine characteristics that mandate the use of such unique instrumentation are pointed out as well as the shortcomings of conventional noncontacting devices. Experimental data taken during engine testing are presented and recommendations for future development discussed.

Fiber Optic Control System Integration program: for optical flight control system development

NASA Astrophysics Data System (ADS)

Weaver, Thomas L.; Seal, Daniel W.

1994-10-01

Hardware and software were developed for optical feedback links in the flight control system of an F/A-18 aircraft. Developments included passive optical sensors and optoelectronics to operate the sensors. Sensors with different methods of operation were obtained from different manufacturers and integrated with common optoelectronics. The sensors were the following: Air Data Temperature; Air Data Pressure; and Leading Edge Flap, Nose Wheel Steering, Trailing Edge Flap, Pitch Stick, Rudder, Rudder Pedal, Stabilator, and Engine Power Lever Control Position. The sensors were built for a variety of aircraft locations and harsh environments. The sensors and optoelectronics were as similar as practical to a production system. The integrated system was installed by NASA for flight testing. Wavelength Division Multiplexing proved successful as a system design philosophy. Some sensors appeared to be better choices for aircraft applications than others, with digital sensors generally being better than analog sensors, and rotary sensors generally being better than linear sensors. The most successful sensor approaches were selected for use in a follow-on program in which the sensors will not just be flown on the aircraft and their performance recorded; but, the optical sensors will be used in closing flight control loops.

One-dimensional CdS nanostructures: a promising candidate for optoelectronics.

PubMed

Li, Huiqiao; Wang, Xi; Xu, Junqi; Zhang, Qi; Bando, Yoshio; Golberg, Dmitri; Ma, Ying; Zhai, Tianyou

2013-06-11

As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Inkjet-printed optoelectronics.

PubMed

Zhan, Zhaoyao; An, Jianing; Wei, Yuefan; Tran, Van Thai; Du, Hejun

2017-01-19

Inkjet printing is a powerful and cost-effective technique for deposition of liquid inks with high accuracy, which is not only of great significance for graphic applications but also has enormous potential for the direct printing of optoelectronic devices. This review highlights a comprehensive overview of the progress that has been made in optoelectronics fabrication by the inkjet printing technique. The first part briefly covers the droplet-generation process in the nozzles of printheads and the physical properties affecting droplet formation and the profiles of the printed patterns. The second section outlines the recent activities related to applications of inkjet printing in optoelectronics fabrication including solar cells, light-emitting diodes, photodetectors and transparent electrodes. In each application field, the challenges with the inkjet printing process and the possible solutions are discussed before a few remarks. In the last section, a brief summary on the progress of inkjet printing fabrication of optoelectronics and an outlook for future research effort are presented.

Optoelectronic semiconductor device and method of fabrication

DOEpatents

Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Fan, Shanhui; Yu, Zongfu

2014-11-25

An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

Optoelectronic aid for patients with severely restricted visual fields in daylight conditions

NASA Astrophysics Data System (ADS)

Peláez-Coca, María Dolores; Sobrado-Calvo, Paloma; Vargas-Martín, Fernando

2011-11-01

In this study we evaluated the immediate effectiveness of an optoelectronic visual field expander in a sample of subjects with retinitis pigmentosa suffering from a severe peripheral visual field restriction. The aid uses the augmented view concept and provides subjects with visual information from outside their visual field. The tests were carried out in daylight conditions. The optoelectronic aid comprises a FPGA (real-time video processor), a wide-angle mini camera and a transparent see-through head-mounted display. This optoelectronic aid is called SERBA (Sistema Electro-óptico Reconfigurable de Ayuda para Baja Visión). We previously showed that, without compromising residual vision, the SERBA system provides information about objects within an area about three times greater on average than the remaining visual field of the subjects [1]. In this paper we address the effects of the device on mobility under daylight conditions with and without SERBA. The participants were six subjects with retinitis pigmentosa. In this mobility test, better results were obtained when subjects were wearing the SERBA system; specifically, both the number of contacts with low-level obstacles and mobility errors decreased significantly. A longer training period with the device might improve its usefulness.

Artificial Olfactory System for Trace Identification of Explosive Vapors Realized by Optoelectronic Schottky Sensing.

PubMed

Guo, Linjuan; Yang, Zheng; Dou, Xincun

2017-02-01

A rapid, ultrasensitive artificial olfactory system based on an individual optoelectronic Schottky junction is demonstrated for the discriminative detection of explosive vapors, including military explosives and improvised explosives. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

NASA Astrophysics Data System (ADS)

Zhang, Liping; Sawchuk, Alexander A.

2001-12-01

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

76 FR 10395 - BreconRidge Manufacturing Solutions, Now Known as Sanmina-SCI Corporation, Division...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-02-24

... Solutions, Now Known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic Design and Manufacturing, a Subsidiary of Sanmina-SCI Corporation, Including On- Site Leased Workers From Kelly Services... Manufacturing Solutions, now known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic...

High bandgap III-V alloys for high efficiency optoelectronics

DOEpatents

Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

2017-01-10

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

Integrated optical circuit engineering V; Proceedings of the Meeting, San Diego, CA, Aug. 17-20, 1987

NASA Astrophysics Data System (ADS)

Mentzer, Mark A.

Recent advances in the theoretical and practical design and applications of optoelectronic devices and optical circuits are examined in reviews and reports. Topics discussed include system and market considerations, guided-wave phenomena, waveguide devices, processing technology, lithium niobate devices, and coupling problems. Consideration is given to testing and measurement, integrated optics for fiber-optic systems, optical interconnect technology, and optical computing.

Perovskite Materials: Solar Cell and Optoelectronic Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Bin; Geohegan, David B; Xiao, Kai

2017-01-01

Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure,more » and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.« less

Water/alcohol soluble conjugated polymers as highly efficient electron transporting/injection layer in optoelectronic devices.

PubMed

Huang, Fei; Wu, Hongbin; Cao, Yong

2010-07-01

Water/alcohol soluble conjugated polymers (WSCPs) can be processed from water or other polar solvents, which offer good opportunities to avoid interfacial mixing upon fabrication of multilayer polymer optoelectronic devices by solution processing, and can dramatically improve charge injection from high work-function metal cathode resulting in greatly enhancement of the device performance. In this critical review, the authors provide a brief review of recent developments in this field, including the materials design, functional principles, and their unique applications as interface modification layer in solution-processable multilayer optoelectronic devices (135 references).

Optoelectronic devices product assurance guideline for space application

NASA Astrophysics Data System (ADS)

Bensoussan, A.; Vanzi, M.

2017-11-01

New opportunities are emerging for the implementation of hardware sub-systems based on OptoElectronic Devices (OED) for space application. Since the end of this decade the main players for space systems namely designers and users including Industries, Agencies, Manufacturers and Laboratories are strongly demanding of adequate strategies to qualify and validate new optoelectronics products and sub-systems [1]. The long term space application mission will require to address either inter-satellite link (free space communication, positioning systems, tracking) or intra-satellite connectivity/flexibility/reconfigurability or high volume of data transfer between equipment installed into payload.

Optoelectronic scanning system upgrade by energy center localization methods

NASA Astrophysics Data System (ADS)

Flores-Fuentes, W.; Sergiyenko, O.; Rodriguez-Quiñonez, J. C.; Rivas-López, M.; Hernández-Balbuena, D.; Básaca-Preciado, L. C.; Lindner, L.; González-Navarro, F. F.

2016-11-01

A problem of upgrading an optoelectronic scanning system with digital post-processing of the signal based on adequate methods of energy center localization is considered. An improved dynamic triangulation analysis technique is proposed by an example of industrial infrastructure damage detection. A modification of our previously published method aimed at searching for the energy center of an optoelectronic signal is described. Application of the artificial intelligence algorithm of compensation for the error of determining the angular coordinate in calculating the spatial coordinate through dynamic triangulation is demonstrated. Five energy center localization methods are developed and tested to select the best method. After implementation of these methods, digital compensation for the measurement error, and statistical data analysis, a non-parametric behavior of the data is identified. The Wilcoxon signed rank test is applied to improve the result further. For optical scanning systems, it is necessary to detect a light emitter mounted on the infrastructure being investigated to calculate its spatial coordinate by the energy center localization method.

Morphological feature detection for cervical cancer screening

NASA Astrophysics Data System (ADS)

Narayanswamy, Ramkumar; Sharpe, John P.; Duke, Heather J.; Stewart, Rosemary J.; Johnson, Kristina M.

1995-03-01

An optoelectronic system has been designed to pre-screen pap-smear slides and detect the suspicious cells using the hit/miss transform. Computer simulation of the algorithm tested on 184 pap-smear images detected 95% of the suspicious region as suspect while tagging just 5% of the normal regions as suspect. An optoelectronic implementation of the hit/miss transform using a 4f Vander-Lugt correlator architecture is proposed and demonstrated with experimental results.

Concept of Quantum Geometry in Optoelectronic Processes in Solids: Application to Solar Cells.

PubMed

Nagaosa, Naoto; Morimoto, Takahiro

2017-07-01

The concept of topology is becoming more and more relevant to the properties and functions of electronic materials including various transport phenomena and optical responses. A pedagogical introduction is given here to the basic ideas and their applications to optoelectronic processes in solids. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Small Molecule Organic Optoelectronic Devices

NASA Astrophysics Data System (ADS)

Bakken, Nathan

Organic optoelectronics include a class of devices synthesized from carbon containing 'small molecule' thin films without long range order crystalline or polymer structure. Novel properties such as low modulus and flexibility as well as excellent device performance such as photon emission approaching 100% internal quantum efficiency have accelerated research in this area substantially. While optoelectronic organic light emitting devices have already realized commercial application, challenges to obtain extended lifetime for the high energy visible spectrum and the ability to reproduce natural white light with a simple architecture have limited the value of this technology for some display and lighting applications. In this research, novel materials discovered from a systematic analysis of empirical device data are shown to produce high quality white light through combination of monomer and excimer emission from a single molecule: platinum(II) bis(methyl-imidazolyl)toluene chloride (Pt-17). Illumination quality achieved Commission Internationale de L'Eclairage (CIE) chromaticity coordinates (x = 0.31, y = 0.38) and color rendering index (CRI) > 75. Further optimization of a device containing Pt-17 resulted in a maximum forward viewing power efficiency of 37.8 lm/W on a plain glass substrate. In addition, accelerated aging tests suggest high energy blue emission from a halogen-free cyclometalated platinum complex could demonstrate degradation rates comparable to known stable emitters. Finally, a buckling based metrology is applied to characterize the mechanical properties of small molecule organic thin films towards understanding the deposition kinetics responsible for an elastic modulus that is both temperature and thickness dependent. These results could contribute to the viability of organic electronic technology in potentially flexible display and lighting applications. The results also provide insight to organic film growth kinetics responsible for optical, mechanical, and water uptake properties relevant to engineering the next generation of optoelectronic devices.

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.

PubMed

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

2016-10-27

Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures.

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

PubMed Central

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

2016-01-01

Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures. PMID:28335321

PREFACE: Preface

NASA Astrophysics Data System (ADS)

Ye, Chaohui; Wang, Zhong Lin; Zhou, Bingkun

2011-02-01

The 3rd International Photonics and OptoElectronics Meeting (POEM 2010) was held from November 2-5, 2011, in Wuhan, China. POEM takes place annually, usually in November, with the aim of focusing on the key techniques of scientific frontiers and industry in the field of optoelectronics, understanding future trends as well as making the most of the industrial advantages of Wuhan - Optics Valley of China (OVC). POEM 2010 presented a plenary session and six parallel sessions. The latter comprised Laser Technology and Applications; Nano-enabled Energy Technologies and Materials; Optoelectronic Devices and Integration; Optoelectronic Sensing and Imaging; Solar Cells, Solid State Lighting and Information Display Technologies; and Tera-Hertz Science and Technology. 700 delegates from the field of optoelectronics - including world-famous experts, researchers, investors and entrepreneurs from more than 20 countries - attended the conference, among whom were 160 invited speakers. POEM 2010 once again received extensive praise for its intricate planning, rich contents, and the high-level and influential invited speakers which it attracted. Participants remarked that the presentations by the invited experts, the 'hot topic' discussions, students' posters, and the awards for papers were very engaging. They appreciated this valuable and beneficial opportunity for exchanging ideas with top photonics and optoelectronics experts. Our thanks are extended to the Conference Secretariat and Local Organizing Committee, who have been completely dedicated to their work, and who made the conference such a great success. We are also grateful for the financial support from 111 Project (B07038), and for the help with organization and coordination from Wuhan National Laboratory for Optoelectronics and Huazhong University of Science and Technology. Proceedings of POEM 2010234 papers were selected out of the 343 manuscripts submitted. The organizers of POEM 2010 are grateful to all the authors whose papers are being published in this volume of the Journal of Physics: Conference Series. The proceedings are divided into six sections according to different technical areas: Laser Technology and Applications (LTA) Nano-enabled Energy Technologies and Materials (NETM) Optoelectronic Devices and Integration (OEDI) Optoelectronic Sensing and Imaging (OSI) Solar Cells, Solid State Lighting and Information Display Technologies (SSID) Tera-Hertz Science and Technology (THST) Wuhan, PR ChinaDecember, 2010 Chaohui YeZhong Lin WangBingkun ZhouConference Chairs The 3rd International Photonics and OptoElectronics Meeting (POEM 2010)November 2-5, 2010Wuhan, China Supporters:Ministry of Education of China (MOE)State Administration of Foreign Experts Affairs (SAFEA)National Natural Science Foundation of China (NSFC) Sponsors:Huazhong University of Science and Technology (HUST)China Hubei Provincial Science Technology Department (HBSTD)Wuhan East Lake National Innovation Model Park Co-operating Societies:Institute of Physics (IOP)American Institute of Physics (AIP)International Biomedical Optics Society (IBOS)Laser Institute of America (LIA)Optical Society of America (OSA)IEEE Photonics Society (Singapore and Hongkong Chapters)Chinese Optical Society (COS) Organizer:Wuhan National Laboratory for Optoelectronics (WNLO) 1. LASER TECHNOLOGY AND APPLICATIONS (LTA)Editors:Peixiang Lu, Wuhan National Laboratory for Optoelectronics (China)Katsumi Midorikawa, Extreme Photonics Research Group, RIKEN (Japan)Bernd Wilhelmi, Jenoptik AG, Jena (Germany) 2. NANO-ENABLED ENERGY TECHNOLOGIES AND MATERIALS (NETM)Editors:Zhong Lin Wang, Wuhan National Laboratory for Optoelectronics (China) and Georgia Institute of Technology (USA)Guozhen Shen, Wuhan National Laboratory for Optoelectronics (China) 3. OPTOELECTRONIC DEVICES AND INTEGRATION (OEDI)Editors:Chinlon Lin, Bell Laboratory (USA)Jesper Moerk, Technical University of Denmark (Denmark)Xun Li, McMaster University (Canada)Xinliang Zhang, Wuhan National Laboratory for Optoelectronics (China)Junqiang Sun, Wuhan National Laboratory for Optoelectronics (China) 4. OPTOELECTRONIC SENSING AND IMAGING (OSI)Editors:Kecheng Yang, Wuhan National Laboratory for Optoelectronics (China)Pengcheng Li, Wuhan National Laboratory for Optoelectronics (China) 5. SOLAR CELLS, SOLID-STATE LIGHTING AND INFORMATION DISPLAY TECHNOLOGIES (SSID)Editors:Hiroshi Amano, Meijo University (Japan)Yibing Cheng, Monash University (Australia)Jinzhong Yu, Institute of Semiconductor, CAS (China)Changqing Chen, Wuhan National Laboratory for Optoelectronics (China)Hongwei Han, Wuhan National Laboratory for Optoelectronics (China)Guoli Tu, Wuhan National Laboratory for Optoelectronics (China) 6. TERA-HERTZ SCIENCE AND TECHNOLOGY (THST)Editors:Jianquan Yao, Tianjin University (China)Shenggang Liu, University of Electronic Science and Technology of China (China)X C Zhang, Rensselaer Polytechnic Institute (USA)Jinsong Liu, Wuhan National Laboratory for Optoelectronics (China) International Advisory Committee:Yibing Cheng, Monash University (Australia)Stephen Z D Cheng, University of Akron (USA)Min Gu, Swinburne University of Technology (Australia)Andrew B Holmes, the University of Melbourne (Australia)Chinlon Lin, Bell Laboratory (retired, USA)Xun Li, McMaster University (Canada)Shenggang Liu, University of Electronic Science and Technology of China (China)Jesper Moerk, Technical University of Denmark (Denmark)Dennis L Matthews, University of California, Davis (USA)Jiacong Shen, Jilin University (China)Ping Shum, Nanyang Technological University (Singapore)Chester C T Shu, Chinese University of Hong Kong (China)Valery V Tuchin, Saratov State University (Russia)Bruce Tromberg, University of California/Irvine (USA)Peiheng Wu, University of Nanjing (China)Alan Willner, University of Southern California (USA)Lihong Wang, Washington University in St. Louis (USA)C P Wong, Georgia Institute of Technology (USA)Jianquan Yao, Tianjin University (China)Xi Zhang, Tsinghua University (China)X C Zhang, Rensselaer Polytechnic Institute (USA) Program Committee:Qingming Luo, Wuhan National Laboratory for Optoelectronics (China) - ChairHiroshi Amano, Meijo University (Japan)Yibing Cheng, Monash University (Australia)Peixiang Lu, Wuhan National Laboratory for Optoelectronics (China)Ruxin Li, Shanghai Institute of Optics and Fine Mechanics (China)Chinlon Lin, Bell Laboratory (USA)Xun Li, McMaster University (Canada)Shenggang Liu, University of Electronic Science and Technology of China (China)Katsumi Midorikawa, Extreme Photonics Research Group, RIKEN (Japan)Jesper Moerk, Technical University of Denmark (Denmark)Valery V Tuchin, Saratov State University (Russia)Lihong Wang, Washington University in St. Louis (USA)Zhong Lin Wang, Georgia Institute of Technology(USA)Jinzhong Yu, Institute of Semiconductor, CAS (China)Jianquan Yao, Tianjin University (China)X C Zhang, Rensselaer Polytechnic Institute (USA) Local Organizing committee:Lin Lin, Wuhan National Laboratory for Optoelectronics (China) - ChairSheng Lu, Administration Committee of Wuhan East Lake Hi-tech Development Zone (China) - ChairChangqing Chen, Wuhan National Laboratory for Optoelectronics (China)Ling Fu, Wuhan National Laboratory for Optoelectronics (China)Hongwei Han, Wuhan National Laboratory for Optoelectronics (China)Peixiang Lu, Wuhan National Laboratory for Optoelectronics (China)Pengcheng Li, Wuhan National Laboratory for Optoelectronics (China)Jinsong Liu, Wuhan National Laboratory for Optoelectronics (China)Junqiang Sun, Wuhan National Laboratory for Optoelectronics (China)Guozhen Shen, Wuhan National Laboratory for Optoelectronics (China)Guoli Tu, Wuhan National Laboratory for Optoelectronics (China)Kecheng Yang, Wuhan National Laboratory for Optoelectronics (China)Xinliang Zhang, Wuhan National Laboratory for Optoelectronics (China)Yuandi Zhao, Wuhan National Laboratory for Optoelectronics (China) Local Secretariat:Xiaochun Xiao, Huazhong University of Science and Technology (China)Weiwei Dong, Huazhong University of Science and Technology (China)

Fiber optic oxygen sensor leak detection system for space applications

NASA Astrophysics Data System (ADS)

Kazemi, Alex A.; Goswami, Kish; Mendoza, Edgar A.; Kempen, Lothar U.

2007-09-01

This paper describes the successful test of a multi-point fiber optic oxygen sensor system during the static firing of an Evolved Expandable Launch Vehicle (EELV)/Delta IV common booster core (CBC) rocket engine at NASA's Stennis Flight Center. The system consisted of microsensors (optrodes) using an oxygen gas sensitive indicator incorporated onto an optically transparent porous substrate. The modular optoelectronics and multiplexing network system was designed and assembled utilizing a multi-channel opto-electronic sensor readout unit that monitored the oxygen and temperature response of the individual optrodes in real-time and communicated this information via a serial communication port to a remote laptop computer. The sensor packaging for oxygen consisted of two optrodes - one doped with an indicator sensitive to oxygen, and the other doped with an indicator sensitive to temperature. The multichannel oxygen sensor system is fully reversible. It has demonstrated a dynamic response to oxygen gas in the range of 0% to 100% with 0.1% resolution and a response time of <=10 seconds. The sensor package was attached to a custom fiber optic ribbon cable, which was then connected to a fiber optic trunk communications cable (standard telecommunications-grade fiber) that connected to the optoelectronics module. Each board in the expandable module included light sources, photo-detectors, and associated electronics required for detecting oxygen and temperature. The paper illustrates the sensor design and performance data under field deployment conditions.

Optoelectronic date acquisition system based on FPGA

NASA Astrophysics Data System (ADS)

Li, Xin; Liu, Chunyang; Song, De; Tong, Zhiguo; Liu, Xiangqing

2015-11-01

An optoelectronic date acquisition system is designed based on FPGA. FPGA chip that is EP1C3T144C8 of Cyclone devices from Altera corporation is used as the centre of logic control, XTP2046 chip is used as A/D converter, host computer that communicates with the date acquisition system through RS-232 serial communication interface are used as display device and photo resistance is used as photo sensor. We use Verilog HDL to write logic control code about FPGA. It is proved that timing sequence is correct through the simulation of ModelSim. Test results indicate that this system meets the design requirement, has fast response and stable operation by actual hardware circuit test.

Compact system with handheld microfabricated optoelectronic probe for needle-based tissue sensing applications

NASA Astrophysics Data System (ADS)

Lee, Seung Yup; Na, Kyounghwan; Pakela, Julia M.; Scheiman, James M.; Yoon, Euisik; Mycek, Mary-Ann

2017-02-01

We present the design, development, and bench-top verification of an innovative compact clinical system including a miniaturized handheld optoelectronic sensor. The integrated sensor was microfabricated with die-level light-emitting diodes and photodiodes and fits into a 19G hollow needle (internal diameter: 0.75 mm) for optical sensing applications in solid tissues. Bench-top studies on tissue-simulating phantoms have verified system performance relative to a fiberoptic based tissue spectroscopy system. With dramatically reduced system size and cost, the technology affords spatially configurable designs for optoelectronic light sources and detectors, thereby enabling customized sensing configurations that would be impossible to achieve with needle-based fiber-optic probes.

Radiation Damage and Single Event Effect Results for Candidate Spacecraft Electronics

NASA Technical Reports Server (NTRS)

OBryan, Martha V.; LaBel, Kenneth A.; Reed, Robert A.; Howard, James W., Jr.; Ladbury, Ray L.; Barth, Janet L.; Kniffin, Scott D.; Seidleck, Christina M.; Marshall, Paul W.; Marshall, Cheryl J.;

A whole-process progressive training mode to foster optoelectronic students' innovative practical ability

NASA Astrophysics Data System (ADS)

Zhong, Hairong; Xu, Wei; Hu, Haojun; Duan, Chengfang

2017-08-01

This article analyzes the features of fostering optoelectronic students' innovative practical ability based on the knowledge structure of optoelectronic disciplines, which not only reveals the common law of cultivating students' innovative practical ability, but also considers the characteristics of the major: (1) The basic theory is difficult, and the close combination of science and technology is obvious; (2)With the integration of optics, mechanics, electronics and computer, the system technology is comprehensive; (3) It has both leading-edge theory and practical applications, so the benefit of cultivating optoelectronic students is high ; (4) The equipment is precise and the practice is costly. Considering the concept and structural characteristics of innovative and practical ability, and adhering to the idea of running practice through the whole process, we put forward the construction of three-dimensional innovation and practice platform which consists of "Synthetically Teaching Laboratory + Innovation Practice Base + Scientific Research Laboratory + Major Practice Base + Joint Teaching and Training Base", and meanwhile build a whole-process progressive training mode to foster optoelectronic students' innovative practical ability, following the process of "basic experimental skills training - professional experimental skills training - system design - innovative practice - scientific research project training - expanded training - graduation project": (1) To create an in - class practical ability cultivation environment that has distinctive characteristics of the major, with the teaching laboratory as the basic platform; (2) To create an extra-curricular innovation practice activities cultivation environment that is closely linked to the practical application, with the innovation practice base as a platform for improvement; (3) To create an innovation practice training cultivation environment that leads the development of cutting-edge, with the scientific research laboratory as a platform to explore; (4) To create an out-campus expanded training environment of optoelectronic major practice and optoelectronic system teaching and training, with the major practice base as an expansion of the platform; (5) To break students' "pre-job training barriers" between school and work, with graduation design as the comprehensive training and testing link.

Advances in graphene-based optoelectronics, plasmonics and photonics

NASA Astrophysics Data System (ADS)

Nguyen, Bich Ha; Hieu Nguyen, Van

2016-03-01

Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented.

Opto-Electronic Oscillator Using Suppressed Phase Modulation

NASA Technical Reports Server (NTRS)

Dick, G. John; Yu, Nan

2007-01-01

A proposed opto-electronic oscillator (OEO) would generate a microwave signal having degrees of frequency stability and spectral purity greater than those achieved in prior OEOs. The design of this system provides for reduction of noise levels (including the level of phase noise in the final output microwave signal) to below some of the fundamental limits of the prior OEOs while retaining the advantages of photonic generation of microwaves.

Recent advances in flexible and wearable organic optoelectronic devices

NASA Astrophysics Data System (ADS)

Zhu, Hong; Shen, Yang; Li, Yanqing; Tang, Jianxin

2018-01-01

Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed. Project supported by the Ministry of Science and Technology of China (No. 2016YFB0400700).

Investigations of DC power supplies with optoelectronic transducers and RF energy converters

NASA Astrophysics Data System (ADS)

Guzowski, B.; Gozdur, R.; Bernacki, L.; Lakomski, M.

2016-04-01

Fiber Distribution Cabinets (FDC) monitoring systems are increasingly popular. However it is difficult to realize such system in passive FDC, due to lack of source of power supply. In this paper investigation of four different DC power supplies with optoelectronic transducers is described. Two converters: photovoltaic power converter and PIN photodiode can convert the light transmitted through the optical fiber to electric energy. Solar cell and antenna RF-PCB are also tested. Results presented in this paper clearly demonstrate that it is possible to build monitoring system in passive FDC. During the tests maximum obtained output power was 11 mW. However all converters provided enough power to excite 32-bit microcontroller with ARM-cores and digital thermometer.

Optoelectronic frequency discriminated phase tuning technology and its applications

NASA Astrophysics Data System (ADS)

Lin, Gong-Ru; Chang, Yung-Cheng

2000-07-01

By using a phase-tunable optoelectronic phase-locked loop, we are able to continuously change the phase as well as the delay-time of optically distributed microwave clock signals or optical pulse train. The advantages of the proposed technique include such as wide-band operation up to 20GHz, wide-range tuning up to 640 degrees, high tuning resolution of <6x10-2 degree/mV, ultra-low short-term phase fluctuation and drive of 4.7x10-2 degree and 3.4x10- 3 degree/min, good linearity with acceptable deviations, and frequency-independent transferred function with slope of nearly 90 degrees/volt, etc. The novel optoelectronic phase shifter is performed by using a DC-voltage controlled, optoelectronic-mixer-based, frequency-down-converted digital phase-locked-loop. The maximum delay-time is continuously tunable up to 3.9 ns for optical pulses repeated at 500 MHz from a gain-switched laser diode. This corresponds to a delay responsivity of about 0.54 ps/mV. The using of the OEPS as being an optoelectronic delay-time controller for optical pulses is demonstrated with temporal resolution of <0.2 ps. Electro-optic sampling of high-frequency microwave signals by using the in-situ delay-time-tunable pulsed laser as a novel optical probe is primarily reported.

Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires.

PubMed

Léonard, François; Song, Erdong; Li, Qiming; Swartzentruber, Brian; Martinez, Julio A; Wang, George T

2015-12-09

Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction.

PubMed

Ross, Jason S; Rivera, Pasqual; Schaibley, John; Lee-Wong, Eric; Yu, Hongyi; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jiaqiang; Mandrus, David; Cobden, David; Yao, Wang; Xu, Xiaodong

2017-02-08

Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p-n junctions in a MoSe 2 -WSe 2 heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p-n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. These results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.

Ultra Small Integrated Optical Fiber Sensing System

PubMed Central

Van Hoe, Bram; Lee, Graham; Bosman, Erwin; Missinne, Jeroen; Kalathimekkad, Sandeep; Maskery, Oliver; Webb, David J.; Sugden, Kate; Van Daele, Peter; Van Steenberge, Geert

2012-01-01

This paper introduces a revolutionary way to interrogate optical fiber sensors based on fiber Bragg gratings (FBGs) and to integrate the necessary driving optoelectronic components with the sensor elements. Low-cost optoelectronic chips are used to interrogate the optical fibers, creating a portable dynamic sensing system as an alternative for the traditionally bulky and expensive fiber sensor interrogation units. The possibility to embed these laser and detector chips is demonstrated resulting in an ultra thin flexible optoelectronic package of only 40 μm, provided with an integrated planar fiber pigtail. The result is a fully embedded flexible sensing system with a thickness of only 1 mm, based on a single Vertical-Cavity Surface-Emitting Laser (VCSEL), fiber sensor and photodetector chip. Temperature, strain and electrodynamic shaking tests have been performed on our system, not limited to static read-out measurements but dynamically reconstructing full spectral information datasets.

Optical fiber sensors embedded in flexible polymer foils

NASA Astrophysics Data System (ADS)

van Hoe, Bram; van Steenberge, Geert; Bosman, Erwin; Missinne, Jeroen; Geernaert, Thomas; Berghmans, Francis; Webb, David; van Daele, Peter

2010-04-01

In traditional electrical sensing applications, multiplexing and interconnecting the different sensing elements is a major challenge. Recently, many optical alternatives have been investigated including optical fiber sensors of which the sensing elements consist of fiber Bragg gratings. Different sensing points can be integrated in one optical fiber solving the interconnection problem and avoiding any electromagnetical interference (EMI). Many new sensing applications also require flexible or stretchable sensing foils which can be attached to or wrapped around irregularly shaped objects such as robot fingers and car bumpers or which can even be applied in biomedical applications where a sensor is fixed on a human body. The use of these optical sensors however always implies the use of a light-source, detectors and electronic circuitry to be coupled and integrated with these sensors. The coupling of these fibers with these light sources and detectors is a critical packaging problem and as it is well-known the costs for packaging, especially with optoelectronic components and fiber alignment issues are huge. The end goal of this embedded sensor is to create a flexible optical sensor integrated with (opto)electronic modules and control circuitry. To obtain this flexibility, one can embed the optical sensors and the driving optoelectronics in a stretchable polymer host material. In this article different embedding techniques for optical fiber sensors are described and characterized. Initial tests based on standard manufacturing processes such as molding and laser structuring are reported as well as a more advanced embedding technique based on soft lithography processing.

New class of optoelectronic oscillators (OEO) for microwave signal generation and processing

NASA Astrophysics Data System (ADS)

Maleki, Lute; Yao, X. S.

1996-11-01

A new class of oscillators based on photonic devices is presented. These opto-electronic oscillators (OEO's) generate microwave oscillation by converting continuous energy from a light source using a feedback circuit which includes a delay element, an electro-optic switch, and a photodetector. Different configurations of OEO's are presented, each of which may be applied to a particular application requiring ultra-high performance, or low cost and small size.

Solar cells

DOEpatents

Peumans, Peter; Uchida, Soichi; Forrest, Stephen R.

2013-06-18

Organic photosensitive optoelectronic devices are disclosed. The devises are thin-film crystalline organic optoelectronic devices capable of generating a voltage when exposed to light, and prepared by a method including the steps of: depositing a first organic layer over a first electrode; depositing a second organic layer over the first organic layer; depositing a confining layer over the second organic layer to form a stack; annealing the stack; and finally depositing a second electrode over the second organic layer.

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.

2016-01-05

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.

2014-07-08

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.

2016-03-22

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Preserving π-conjugation in covalently functionalized carbon nanotubes for optoelectronic applications.

PubMed

Setaro, Antonio; Adeli, Mohsen; Glaeske, Mareen; Przyrembel, Daniel; Bisswanger, Timo; Gordeev, Georgy; Maschietto, Federica; Faghani, Abbas; Paulus, Beate; Weinelt, Martin; Arenal, Raul; Haag, Rainer; Reich, Stephanie

2017-01-30

Covalent functionalization tailors carbon nanotubes for a wide range of applications in varying environments. Its strength and stability of attachment come at the price of degrading the carbon nanotubes sp 2 network and destroying the tubes electronic and optoelectronic features. Here we present a non-destructive, covalent, gram-scale functionalization of single-walled carbon nanotubes by a new [2+1] cycloaddition. The reaction rebuilds the extended π-network, thereby retaining the outstanding quantum optoelectronic properties of carbon nanotubes, including bright light emission at high degree of functionalization (1 group per 25 carbon atoms). The conjugation method described here opens the way for advanced tailoring nanotubes as demonstrated for light-triggered reversible doping through photochromic molecular switches and nanoplasmonic gold-nanotube hybrids with enhanced infrared light emission.

Rapidly-Indexing Incremental-Angle Encoder

NASA Technical Reports Server (NTRS)

Christon, Philip R.; Meyer, Wallace W.

1989-01-01

Optoelectronic system measures relative angular position of shaft or other device to be turned, also measures absolute angular position after device turned through small angle. Relative angular position measured with fine resolution by optoelectronically counting finely- and uniformly-spaced light and dark areas on encoder disk as disk turns past position-sensing device. Also includes track containing coarsely- and nonuniformly-spaced light and dark areas, angular widths varying in proportion to absolute angular position. This second track provides gating and indexing signal.

Experiments On Transparent Conductive Films For Spacecraft

NASA Technical Reports Server (NTRS)

Perez-Davis, Marla E.; Rutledge, Sharon K.; De Groh, Kim K.; Hung, Ching-Cheh; Malave-Sanabria, Tania; Hambourger, Paul; Roig, David

1995-01-01

Report describes experiments on thin, transparent, electrically conductive films made, variously, of indium tin oxide covered by magnesium fluoride (ITO/MgF2), aluminum-doped zinc oxide (AZO), or pure zinc oxide (ZnO). Films are candidates for application to such spacecraft components, including various optoelectronic devices and window surfaces that must be protected against buildup of static electric charge. On Earth, such films useful on heat mirrors, optoelectronic devices, gas sensors, and automotive and aircraft windows.

Organic-inorganic hybrid lead halide perovskites for optoelectronic and electronic applications.

PubMed

Zhao, Yixin; Zhu, Kai

2016-02-07

Organic and inorganic hybrid perovskites (e.g., CH(3)NH(3)PbI(3)), with advantages of facile processing, tunable bandgaps, and superior charge-transfer properties, have emerged as a new class of revolutionary optoelectronic semiconductors promising for various applications. Perovskite solar cells constructed with a variety of configurations have demonstrated unprecedented progress in efficiency, reaching about 20% from multiple groups after only several years of active research. A key to this success is the development of various solution-synthesis and film-deposition techniques for controlling the morphology and composition of hybrid perovskites. The rapid progress in material synthesis and device fabrication has also promoted the development of other optoelectronic applications including light-emitting diodes, photodetectors, and transistors. Both experimental and theoretical investigations on organic-inorganic hybrid perovskites have enabled some critical fundamental understandings of this material system. Recent studies have also demonstrated progress in addressing the potential stability issue, which has been identified as a main challenge for future research on halide perovskites. Here, we review recent progress on hybrid perovskites including basic chemical and crystal structures, chemical synthesis of bulk/nanocrystals and thin films with their chemical and physical properties, device configurations, operation principles for various optoelectronic applications (with a focus on solar cells), and photophysics of charge-carrier dynamics. We also discuss the importance of further understanding of the fundamental properties of hybrid perovskites, especially those related to chemical and structural stabilities.

Durability improvements of two-dimensional metal nanoparticle sheets by molecular cross-linked structures between nanoparticles

NASA Astrophysics Data System (ADS)

Saito, Noboru; Ryuzaki, Sou; Wang, Pangpang; Park, Susie; Sakai, Nobuyuki; Tatsuma, Tetsu; Okamoto, Koichi; Tamada, Kaoru

2018-03-01

The durability of two-dimensional metal nanoparticle sheets is a crucial factor for realizing next-generation optoelectronic devices based on plasmonics such as organic light-emitting diodes. Here, we report improvements in the durability of Ag nanoparticle sheets by forming alkanedithiol (DT16) cross-linked structures between the nanoparticles. The cross-linked structures in a sheet were fabricated by the self-assembly of DT16-capped Ag nanoparticles with 10% coverage (AgDT16). The durabilities for thermal, organic solvent, and oxidation reactions of AgDT16 sheets were found to be improved owing to the cross-linked structures by comparing Ag nanoparticle sheets without the cross-linked structures. The absorbance spectra revealed that the Ag nanoparticle sheets without the structure are markedly damaged by each durability test, whereas the AgDT16 sheets remain. The molecular cross-linked structures between nanoparticles in two-dimansional metal nanoparticle sheets were found to have the potential to play a key role in the realization of plasmonic optoelectronic devices including metal nanoparticles.

Applied Electronics and Optical Laboratory: an optimized practical course for comprehensive training on optics and electronics

NASA Astrophysics Data System (ADS)

Wang, Kaiwei; Wang, Xiaoping

2017-08-01

In order to enhance the practical education and hands-on experience of optoelectronics and eliminate the overlapping contents that previously existed in the experiments section adhering to several different courses, a lab course of "Applied Optoelectronics Laboratory" has been established in the College of Optical Science and Engineering, Zhejiang University. The course consists of two sections, i.e., basic experiments and project design. In section 1, basic experiments provide hands-on experience with most of the fundamental concept taught in the corresponding courses. These basic experiments including the study of common light sources such as He-Ne laser, semiconductor laser and solid laser and LED; the testing and analysis of optical detectors based on effects of photovoltaic effect, photoconduction effect, photo emissive effect and array detectors. In section 2, the course encourages students to build a team and establish a stand-alone optical system to realize specific function by taking advantage of the basic knowledge learned from section 1. Through these measures, students acquired both basic knowledge and the practical application skills. Moreover, interest in science has been developed among students.

Absolute shape measurements using high-resolution optoelectronic holography methods

NASA Astrophysics Data System (ADS)

Furlong, Cosme; Pryputniewicz, Ryszard J.

2000-01-01

Characterization of surface shape and deformation is of primary importance in a number of testing and metrology applications related to the functionality, performance, and integrity of components. In this paper, a unique, compact, and versatile state-of-the-art fiber-optic-based optoelectronic holography (OEH) methodology is described. This description addresses apparatus and analysis algorithms, especially developed to perform measurements of both absolute surface shape and deformation. The OEH can be arranged in multiple configurations, which include the three-camera, three-illumination, and in-plane speckle correlation setups. With the OEH apparatus and analysis algorithms, absolute shape measurements can be made, using present setup, with a spatial resolution and accuracy of better than 30 and 10 micrometers , respectively, for volumes characterized by a 300-mm length. Optimizing the experimental setup and incorporating equipment, as it becomes available, having superior capabilities to the ones utilized in the present investigations can further increase resolution and accuracy in the measurements. The particular feature of this methodology is its capability to export the measurements data directly into CAD environments for subsequent processing, analysis, and definition of CAD/CAE models.

Optoelectronics components and technology for optical networking in China: recent progress and future trends

NASA Astrophysics Data System (ADS)

Jiang, Shan; Liu, Shuihua

2004-04-01

Current optical communication systems are more and more relying on the advanced opto-electronic components. A series of revolutionary optical and optoelectronics components technology accounts for the fast progress and field deployment of high-capacity telecommunication and data-transmission systems. Since 1990s, the optical communication industry in China entered a high-speed development period and its wide deployment had already established the solid base for China information infrastructure. In this presentation, the main progress of optoelectronics components and technology in China are reviewed, which includes semiconductor laser diode/photo receiver, fiber optical amplifier, DWDM multiplexer/de-multiplexer, dispersion compensation components and all optical network node components, such as optical switch, OADM, tunable optical filters and variable optical attenuators, etc. Integration discrete components into monolithic/hybrid platform component is an inevitable choice for the consideration of performance, mass production and cost reduction. The current status and the future trends of OEIC and PIC components technology in China will also be discuss mainly on the monolithic integration DFB LD + EA modulator, and planar light-wave circuit (PLC) technology, etc.

Design Two-dimensional Materials with Superb Electronic and Optoelectronic Properties: The case of SiS

NASA Astrophysics Data System (ADS)

Wei, Su-Huai; Yang, Ji-Hui; Zhang, Yueyu; Yin, Wan-Jian; Gong, X. G.; Yakobson, Boris I.

Two-dimensional (2D) semiconductors have many unique electronic and optoelectronic properties that is suitable for novel device applications. Most of the current study are focused on group IV or transition metal chalcogenides. In this study, using atomic transmutation and global optimization methods, we identified two group IV-VI 2D materials, Pma2-SiS and silicene sulfide that can overcome shortcomings encountered in conventional 2D semiconducttord. Pma2-SiS is found to be both chemically, energetically, and thermally stable. Most importantly, Pma2-SiS has unique electronic and optoelectronic properties, including direct bandgaps suitable for solar cells, good mobility for nanoelectronics, good flexibility of property tuning by layer thickness and strain appliance, and good air stability as well. Therefore, Pma2-SiS is expected to be a very promising 2D material in the field of 2D electronics and optoelectronics. Silicene sulfide also shows similar properties. We believe that the designing principles and approaches used to identify these materials have great potential to accelerate future finding of new functional materials within the 2D families.

Simultaneous thermoelectric and optoelectronic characterization of individual nanowires

DOE PAGES

Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; ...

2015-11-03

Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrentmore » observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.« less

Interlayer exciton optoelectronics in a 2D heterostructure p–n junction

DOE PAGES

Ross, Jason S.; Rivera, Pasqual; Schaibley, John; ...

2016-12-22

Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p–n junctions in a MoSe 2–WSe 2 heterobilayer. Applying a forward bias enablesmore » the first observation of electroluminescence from interlayer excitons. At zero bias, the p–n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. Lastly, these results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.« less

Solid state carbon nanotube device for controllable trion electroluminescence emission

NASA Astrophysics Data System (ADS)

Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

2016-03-01

Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07468a

Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.

PubMed

Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung

2016-06-01

Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of annealing over optoelectronic properties of graphene based transparent electrodes

NASA Astrophysics Data System (ADS)

Yadav, Shriniwas; Kaur, Inderpreet

2016-04-01

Graphene, an atom-thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σdc/σopt) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

Radiation Testing and Evaluation Issues for Modern Integrated Circuits

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Cohn, Lew M.

2005-01-01

Abstract. Changes in modern integrated circuit (IC) technologies have modified the way we approach and conduct radiation tolerance and testing of electronics. These changes include scaling of geometries, new materials, new packaging technologies, and overall speed and device complexity challenges. In this short course section, we will identify and discuss these issues as they impact radiation testing, modeling, and effects mitigation of modern integrated circuits. The focus will be on CMOS-based technologies, however, other high performance technologies will be discussed where appropriate. The effects of concern will be: Single-Event Effects (SEE) and steady state total ionizing dose (TID) IC response. However, due to the growing use of opto-electronics in space systems issues concerning displacement damage testing will also be considered. This short course section is not intended to provide detailed "how-to-test" information, but simply provide a snapshot of current challenges and some of the approaches being considered.

Optical fabrication and testing; Proceedings of the Meeting, Singapore, Oct. 22-27, 1990

NASA Astrophysics Data System (ADS)

Lorenzen, Manfred; Campbell, Duncan R.; Johnson, Craig W.

1991-03-01

Various papers on optical fabrication and testing are presented. Individual topics addressed include: interferometry with laser diodes, new methods for economic production of prisms and lenses, interferometer accuracy and precision, optical testing with wavelength scanning interferometer, digital Talbot interferometer, high-sensitivity interferometric technique for strain measurements, absolute interferometric testing of spherical surfaces, contouring using gratings created on an LCD panel, three-dimensional inspection using laser-based dynamic fringe projection, noncontact optical microtopography, laser scan microscope and infrared laser scan microscope, photon scanning tunneling microscopy. Also discussed are: combination-matching problems in the layout design of minilaser rangefinder, design and testing of a cube-corner array for laser ranging, mode and far-field pattern of diode laser-phased arrays, new glasses for optics and optoelectronics, optical properties of Li-doped ZnO films, application and machining of Zerodur for optical purposes, finish machining of optical components in mass production.

Optical fabrication and testing; Proceedings of the Meeting, Singapore, Oct. 22-27, 1990

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lorenzen, M.; Campbell, D.R.; Johnson, C.W.

1991-01-01

Various papers on optical fabrication and testing are presented. Individual topics addressed include: interferometry with laser diodes, new methods for economic production of prisms and lenses, interferometer accuracy and precision, optical testing with wavelength scanning interferometer, digital Talbot interferometer, high-sensitivity interferometric technique for strain measurements, absolute interferometric testing of spherical surfaces, contouring using gratings created on an LCD panel, three-dimensional inspection using laser-based dynamic fringe projection, noncontact optical microtopography, laser scan microscope and infrared laser scan microscope, photon scanning tunneling microscopy. Also discussed are: combination-matching problems in the layout design of minilaser rangefinder, design and testing of a cube-corner arraymore » for laser ranging, mode and far-field pattern of diode laser-phased arrays, new glasses for optics and optoelectronics, optical properties of Li-doped ZnO films, application and machining of Zerodur for optical purposes, finish machining of optical components in mass production.« less

Exploration on the training mode of application-oriented talents majoring in optoelectronic information

NASA Astrophysics Data System (ADS)

Lv, Hao; Liu, Aimei; Zhang, Shengyi; Xiao, Yongjun

2017-08-01

The optoelectronic information major is a strong theoretical and practical specialty. In view of the problems existing in the application-oriented talents training in the optoelectronic information specialty. Five aspects of the talent cultivation plan, the teaching staff, the teaching content, the practical teaching and the scientific research on the training mode of application-oriented talents majoring in optoelectronic information are putted forward. It is beneficial to the specialty construction of optoelectronic information industry which become close to the development of enterprises, and the depth of the integration of school and enterprise service regional economic optoelectronic information high-end skilled personnel base.

Intriguing optoelectronic properties of metal halide perovskites

DOE PAGES

Manser, Joseph S.; Christians, Jeffrey A.; Kamat, Prashant V.

2016-06-21

Here, a new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX 3 stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewedmore » with an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CH 3NH 3PbI 3) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2- dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.« less

Development of optical sciences in Poland

NASA Astrophysics Data System (ADS)

Romaniuk, Ryszard S.

2013-10-01

Research and technical communities for optics, photonics and optoelectronics is grouped in this country in several organizations and institutions. These are: Photonics Society of Poland (PSP), Polish Committee of Optoelectronics of SEP, Photonics Section of KEiT PAN, Laser Club at WAT, and Optics Section of PTF. Each of these communities keeps slightly different specificity. PSP publishes a quarterly journal Photonics Letters of Poland, stimulates international cooperation, and organizes conferences during Industrial Fairs on Innovativeness. PKOpto SEP organizes didactic diploma competitions in optoelectronics. KEiT PAN takes patronage over national conferences in laser technology, optical fiber technology and communications, and photonics applications. SO-PTF has recently taken a decision to organize a cyclic event "Polish Optical Conference". The third edition of this conference PKO'2013 was held in Sandomierz on 30.06-04.07.2013. The conference scientific and technical topics include: quantum and nonlinear optics, photon physics, optic and technology of lasers and other sources of coherent radiation, optoelectronics, optical integrated circuits, optical fibers, medical optics, instrumental optics, optical spectroscopy, optical metrology, new optical materials, applications of optics, teaching in optics. This paper reviews chosen works presented during the III Polish Optical Conference (PKO'2013), representing the research efforts at different national institutions.

Method And Apparatus For Coupling Optical Elements To Optoelectronic Devices For Manufacturing Optical Transceiver Modules

DOEpatents

Anderson, Gene R.; Armendariz, Marcelino G.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; Giunta, Rachel Knudsen; Mitchell, Robert T.; McCormick, Frederick B.; Peterson, David W.; Rising, Merideth A.; Reber, Cathleen A.; Reysen, Bill H.

2005-06-14

A process is provided for aligning and connecting at least one optical fiber to at least one optoelectronic device so as to couple light between at least one optical fiber and at least one optoelectronic device. One embodiment of this process comprises the following steps: (1) holding at least one optical element close to at least one optoelectronic device, at least one optical element having at least a first end; (2) aligning at least one optical element with at least one optoelectronic device; (3) depositing a first non-opaque material on a first end of at least one optoelectronic device; and (4) bringing the first end of at least one optical element proximate to the first end of at least one optoelectronic device in such a manner that the first non-opaque material contacts the first end of at least one optoelectronic device and the first end of at least one optical element. The optical element may be an optical fiber, and the optoelectronic device may be a vertical cavity surface emitting laser. The first non-opaque material may be a UV optical adhesive that provides an optical path and mechanical stability. In another embodiment of the alignment process, the first end of at least one optical element is brought proximate to the first end of at least one optoelectronic device in such a manner that an interstitial space exists between the first end of at least one optoelectronic device and the first end of at least one optical element.

Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

DOEpatents

Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

2014-04-01

A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

Negative terahertz photoconductivity in 2D layered materials.

PubMed

Lu, Junpeng; Liu, Hongwei; Sun, Jing

2017-11-17

The remarkable qualities of 2D layered materials such as wide spectral coverage, high strength and great flexibility mean that ultrathin 2D layered materials have the potential to meet the criteria of next-generation optoelectronic devices. Photoconductivity is one of the critical parameters of materials applied to optoelectronics. In contrast to traditional semiconductors, specific ultrathin 2D layers present anomalous negative photoconductivity. This opens a new avenue for designing novel optoelectronic devices. It is important to have a deep understanding of the fundamentals of this anomalous response, in order to design and optimize such devices. In this review, we provide an overview of the observation of negative photoconductivity in 2D layered materials including graphene, topological insulators and transitional metal dichalcogenides. We also summarize recent reports on investigations into the fundamental mechanism using ultrafast terahertz (THz) spectroscopies. Finally, we conclude the review by discussing the existing challenges and proposing the possible prospects of this direction of research.

A hybrid lightwave transmission system based on light injection/optoelectronic feedback techniques and fiber-VLLC integration

NASA Astrophysics Data System (ADS)

Tsai, Wen-Shing; Lu, Hai-Han; Li, Chung-Yi; Chen, Bo-Rui; Lin, Hung-Hsien; Lin, Dai-Hua

2016-04-01

A hybrid lightwave transmission system based on light injection/optoelectronic feedback techniques and fiber-visible laser light communication (VLLC) integration is proposed and experimentally demonstrated. To be the first one of its kind in employing light injection and optoelectronic feedback techniques in a fiber-VLLC integration lightwave transmission system, the light is successfully directly modulated with Community Access Television (CATV), 16-QAM, and 16-QAM-OFDM signals. Over a 40 km SMF and a 10 m free-space VLLC transport, good performances of carrier-to-noise ratio (CNR)/composite second-order (CSO)/composite triple-beat (CTB)/bit error rate (BER) are achieved for CATV/16-QAM/16-QAM-OFDM signals transmission. Such a hybrid lightwave transmission system would be very useful since it can provide broadband integrated services including CATV, Internet, and telecommunication services over both distribute fiber and in-building networks.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jr., Jie Jerry; Sista, Srinivas Prasad; Shi, Xiaolei

Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and an electron transporting layer comprising inorganic nanoparticles dispersed in an organic matrix.

Investigation, study and practice of optoelectronic MOOCs

NASA Astrophysics Data System (ADS)

Shi, Jianhua; Liu, Wei; Lei, Bing; Yao, Tianfu; Fu, Sihua

2017-08-01

MOOC(Massive Open Online Course) is a new teaching model that has been springing up since 2012. The typical characters are short teaching video, massive learners, flexible place and time to study, etc. Although MOOC is very popular now, opto-electronic MOOCs are not much enough to meet the need of online learners. In this paper, the phylogeny, the current situation and the characters of MOOC were described, the most famous MOOCs' websites, such as Udacity, Coursera, edX, Chinese College MOOC, xuetangx, were introduced, the opto-electronic MOOCs come from these famous MOOCs' website were investigated extensively and studied deeply, the "Application of Opto-electronic Technology MOOC" which was established by our group is introduced, and some conclusions are obtained. These conclusions can give some suggestions to the online learners who are interested in opto-electronic and the teachers who are teaching the opto-electronic curriculums. The preparation of "Opto-electronic Technology MOOC" is described in short.

Semiconductor laser-based optoelectronics oscillators

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, Lute; Wu, Chi; Davis, Lawrence J.; Forouhar, Siamak

1998-08-01

We demonstrate the realization of coupled opto-electronic oscillators (COEO) with different semiconductor lasers, including a ring laser, a Fabry-Perot laser, and a colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

Optoelectronics education training programs in Scotland

NASA Astrophysics Data System (ADS)

Marsh, John H.

2002-05-01

The optoelectronics industry is of increasing importance to the Scottish economy, with annual sales of 1 billion and it is planned to grow this to 8.8 billion by 2010. The industry already employs around 5,000 people and, in the last year, 800 new jobs were created, including a high percentage filled by graduates and PhDs. One of the major challenges is to provide staff training at all levels: technicians, graduates and postgraduates. A variety of organizations - industry, government, university and professional societies - are working together to meet this challenge.

AlxGa1-xAs Single-Quantum-Well Surface-Emitting Lasers

NASA Technical Reports Server (NTRS)

Kim, Jae H.

1992-01-01

Surface-emitting solid-state laser contains edge-emitting Al0.08Ga0.92As single-quantum-well (SQW) active layer sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs, includes etched 90 degree mirrors and 45 degree facets to direct edge-emitted beam perpendicular to top surface. Laser resembles those described in "Pseudomorphic-InxGa1-xAs Surface-Emitting Lasers" (NPO-18243). Suitable for incorporation into optoelectronic integrated circuits for photonic computing; e.g., optoelectronic neural networks.

Variation in Optoelectronic Properties of Azo Dye-Sensitized TiO 2 Semiconductor Interfaces with Different Adsorption Anchors: Carboxylate, Sulfonate, Hydroxyl and Pyridyl Groups

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Lei; Cole, Jacqueline M.; Dai, Chencheng

2014-05-28

The optoelectronic properties of four azo dye-sensitized TiO2 interfaces are systematically studied as a function of a changing dye anchoring group: carboxylate, sulfonate, hydroxyl, and pyridyl. The variation in optoelectronic properties of the free dyes and those in dye/TiO 2 nanocomposites are studied both experimentally and computationally, in the context of prospective dye-sensitized solar cell (DSSC) applications. Experimental UV/vis absorption spectroscopy, cyclic voltammetry, and DSSC device performance testing reveal a strong dependence on the nature of the anchor of the optoelectronic properties of these dyes, both in solution and as dye/TiO2 nanocomposites. First-principles calculations on both an isolated dye/TiO2 clustermore » model (using localized basis sets) and each dye modeled onto the surface of a 2D periodic TiO2 nanostructure (using plane wave basis sets) are presented. Detailed examination of these experimental and computational results, in terms of light harvesting, electron conversion and photovoltaic device performance characteristics, indicates that carboxylate is the best anchoring group, and hydroxyl is the worst, whereas sulfonate and pyridyl groups exhibit competing potential. Different sensitization solvents are found to affect critically the extent of dye adsorption achieved in the dye-sensitization of the TiO2 semiconductor, especially where the anchor is a pyridyl group.« less

The Validity and Reliability of an iPhone App for Measuring Running Mechanics.

PubMed

Balsalobre-Fernández, Carlos; Agopyan, Hovannes; Morin, Jean-Benoit

2017-07-01

The purpose of this investigation was to analyze the validity of an iPhone application (Runmatic) for measuring running mechanics. To do this, 96 steps from 12 different runs at speeds ranging from 2.77-5.55 m·s -1 were recorded simultaneously with Runmatic, as well as with an opto-electronic device installed on a motorized treadmill to measure the contact and aerial time of each step. Additionally, several running mechanics variables were calculated using the contact and aerial times measured, and previously validated equations. Several statistics were computed to test the validity and reliability of Runmatic in comparison with the opto-electronic device for the measurement of contact time, aerial time, vertical oscillation, leg stiffness, maximum relative force, and step frequency. The running mechanics values obtained with both the app and the opto-electronic device showed a high degree of correlation (r = .94-.99, p < .001). Moreover, there was very close agreement between instruments as revealed by the ICC (2,1) (ICC = 0.965-0.991). Finally, both Runmatic and the opto-electronic device showed almost identical reliability levels when measuring each set of 8 steps for every run recorded. In conclusion, Runmatic has been proven to be a highly reliable tool for measuring the running mechanics studied in this work.

Simple Optoelectronic Feedback in Microwave Oscillators

NASA Technical Reports Server (NTRS)

Maleki, Lute; Iltchenko, Vladimir

2009-01-01

A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.

Review of optoelectronic oscillators based on modelocked lasers and resonant tunneling diode optoelectronics

NASA Astrophysics Data System (ADS)

Ironside, C. N.; Haji, Mohsin; Hou, Lianping; Akbar, Jehan; Kelly, Anthony E.; Seunarine, K.; Romeira, Bruno; Figueiredo, José M. L.

2011-05-01

Optoelectronic oscillators can provide low noise oscillators at radio frequencies in the 0.5-40 GHz range and in this paper we review two recently introduced approaches to optoelectronic oscillators. Both approaches use an optical fibre feedback loop. One approach is based on passively modelocked laser diodes and in a 40 GHz oscillator achieves up to 30 dB noise reduction. The other approach is based on resonant tunneling diode optoelectronic devices and in a 1.4 GHz oscillator can achieve up to 30 dB noise reduction.

Analysis of optoelectronic strategic planning in Taiwan by artificial intelligence portfolio tool

NASA Astrophysics Data System (ADS)

Chang, Rang-Seng

1992-05-01

Taiwan ROC has achieved significant advances in the optoelectronic industry with some Taiwan products ranked high in the world market and technology. Six segmentations of optoelectronic were planned. Each one was divided into several strategic items, design artificial intelligent portfolio tool (AIPT) to analyze the optoelectronic strategic planning in Taiwan. The portfolio is designed to provoke strategic thinking intelligently. This computer- generated strategy should be selected and modified by the individual. Some strategies for the development of the Taiwan optoelectronic industry also are discussed in this paper.

Single-sided lateral-field and phototransistor-based optoelectronic tweezers

NASA Technical Reports Server (NTRS)

Ohta, Aaron (Inventor); Chiou, Pei-Yu (Inventor); Hsu, Hsan-Yin (Inventor); Jamshidi, Arash (Inventor); Wu, Ming-Chiang (Inventor); Neale, Steven L. (Inventor)

2011-01-01

Described herein are single-sided lateral-field optoelectronic tweezers (LOET) devices which use photosensitive electrode arrays to create optically-induced dielectrophoretic forces in an electric field that is parallel to the plane of the device. In addition, phototransistor-based optoelectronic tweezers (PhOET) devices are described that allow for optoelectronic tweezers (OET) operation in high-conductivity physiological buffer and cell culture media.

Brownian motion properties of optoelectronic random bit generators based on laser chaos.

PubMed

Li, Pu; Yi, Xiaogang; Liu, Xianglian; Wang, Yuncai; Wang, Yongge

2016-07-11

The nondeterministic property of the optoelectronic random bit generator (RBG) based on laser chaos are experimentally analyzed from two aspects of the central limit theorem and law of iterated logarithm. The random bits are extracted from an optical feedback chaotic laser diode using a multi-bit extraction technique in the electrical domain. Our experimental results demonstrate that the generated random bits have no statistical distance from the Brownian motion, besides that they can pass the state-of-the-art industry-benchmark statistical test suite (NIST SP800-22). All of them give a mathematically provable evidence that the ultrafast random bit generator based on laser chaos can be used as a nondeterministic random bit source.

Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applications

NASA Technical Reports Server (NTRS)

Kim, J. H.; Katz, J.; Lin, S. H.; Psaltis, D.

1989-01-01

A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.

Hot carrier-enhanced interlayer electron-hole pair multiplication in 2D semiconductor heterostructure photocells

NASA Astrophysics Data System (ADS)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger K.; Aji, Vivek; Gabor, Nathaniel M.

2017-12-01

Strong electronic interactions can result in novel particle-antiparticle (electron-hole, e-h) pair generation effects, which may be exploited to enhance the photoresponse of nanoscale optoelectronic devices. Highly efficient e-h pair multiplication has been demonstrated in several important nanoscale systems, including nanocrystal quantum dots, carbon nanotubes and graphene. The small Fermi velocity and nonlocal nature of the effective dielectric screening in ultrathin layers of transition-metal dichalcogenides (TMDs) indicates that e-h interactions are very strong, so high-efficiency generation of e-h pairs from hot electrons is expected. However, such e-h pair multiplication has not been observed in 2D TMD devices. Here, we report the highly efficient multiplication of interlayer e-h pairs in 2D semiconductor heterostructure photocells. Electronic transport measurements of the interlayer I-VSD characteristics indicate that layer-indirect e-h pairs are generated by hot-electron impact excitation at temperatures near T = 300 K. By exploiting this highly efficient interlayer e-h pair multiplication process, we demonstrate near-infrared optoelectronic devices that exhibit 350% enhancement of the optoelectronic responsivity at microwatt power levels. Our findings, which demonstrate efficient carrier multiplication in TMD-based optoelectronic devices, make 2D semiconductor heterostructures viable for a new class of ultra-efficient photodetectors based on layer-indirect e-h excitations.

Applications of Nanostructured Graphene in Optoelectronics as Transparent Conductors and Photodetectors

NASA Astrophysics Data System (ADS)

Xu, Guowei

Graphene, a single layer of carbon atoms arranged in a hexagonal lattice, has unique properties of high carrier mobility, high optical transmittance, chemical inertness and flexibility, making it attractive for electronic and optoelectronic applications, such as graphene transistors, ultrahigh capacitors, transparent conductors (TCs), photodetectors. This work explores novel schemes of nanostructured graphene for optoelectronic applications including advanced TCs and photodetectors. In nanophotonic graphene nanohole arrays patterned using nanoimprinting lithography (NIL), highly efficient chemical doping was achieved on the hole edges. This provides a unique scheme for improving both optical transmittance and electrical conductivity of graphene-based TCs. In plasmonic graphene, Ag nanoparticles were decorated on graphene using thermally assisted self-assembly and NIL. Much enhanced conductivity by a factor of 2-4 was achieved through electron doping in graphene from Ag nanoparticles. More importantly, surface plasmonic effect has been incorporated into plasmonic graphene as advanced TCs with light trapping, which is critical to ultrathin-film optoelectronics such as photovoltaics and photodetectors. Based on plasmonic graphene electric double-layer (EDL) transistor, a novel scheme of photodetection has been demonstrated using plasmonic enhanced local field gating. The resulting tuning of interfacial capacitance as well as the quantum capacitance of graphene manifested as extraordinary photoconductivity and hence photoresponse.

Optoelectronics-related competence building in Japanese and Western firms

NASA Astrophysics Data System (ADS)

Miyazaki, Kumiko

1992-05-01

In this paper, an analysis is made of how different firms in Japan and the West have developed competence related to optoelectronics on the basis of their previous experience and corporate strategies. The sample consists of a set of seven Japanese and four Western firms in the industrial, consumer electronics and materials sectors. Optoelectronics is divided into subfields including optical communications systems, optical fibers, optoelectronic key components, liquid crystal displays, optical disks, and others. The relative strengths and weaknesses of companies in the various subfields are determined using the INSPEC database, from 1976 to 1989. Parallel data are analyzed using OTAF U.S. patent statistics and the two sets of data are compared. The statistical analysis from the database is summarized for firms in each subfield in the form of an intra-firm technology index (IFTI), a new technique introduced to assess the revealed technology advantage of firms. The quantitative evaluation is complemented by results from intensive interviews with the management and scientists of the firms involved. The findings show that there is a marked variation in the way firms' technological trajectories have evolved giving rise to strength in some and weakness in other subfields for the different companies, which are related to their accumulated core competencies, previous core business activities, organizational, marketing, and competitive factors.

NASA Tech Briefs, April 1993. Volume 17, No. 4

NASA Technical Reports Server (NTRS)

1993-01-01

Topics include: Optoelectronics; Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer Programs; Mechanics; Machinery; Fabrication Technology; Mathematics and Information Sciences; Life Sciences;

Recovery of Spectrally Overlapping QPSK Signals Using a Nonlinear Optoelectronic Filter

DTIC Science & Technology

2017-03-19

Spectrally Overlapping QPSK Signals Using a Nonlinear Optoelectronic Filter William Loh, Siva Yegnanarayanan, Kenneth E. Kolodziej, and Paul...recovery of a weak QPSK signal buried 35-dB beneath an interfering QPSK signal having an overlapping spectrum. This nonlinear optoelectronic filter ...from increased detection sensitivity. Here, we demonstrate an optoelectronic filter that enables the detection of a desired signal hidden beneath a

GaAs Optoelectronic Integrated-Circuit Neurons

NASA Technical Reports Server (NTRS)

Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

1992-01-01

Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

Accuracy of dielectric-dependent hybrid functionals in the prediction of optoelectronic properties of metal oxide semiconductors: a comprehensive comparison with many-body GW and experiments

NASA Astrophysics Data System (ADS)

Gerosa, M.; E Bottani, C.; Di Valentin, C.; Onida, G.; Pacchioni, G.

2018-01-01

Understanding the electronic structure of metal oxide semiconductors is crucial to their numerous technological applications, such as photoelectrochemical water splitting and solar cells. The needed experimental and theoretical knowledge goes beyond that of pristine bulk crystals, and must include the effects of surfaces and interfaces, as well as those due to the presence of intrinsic defects (e.g. oxygen vacancies), or dopants for band engineering. In this review, we present an account of the recent efforts in predicting and understanding the optoelectronic properties of oxides using ab initio theoretical methods. In particular, we discuss the performance of recently developed dielectric-dependent hybrid functionals, providing a comparison against the results of many-body GW calculations, including G 0 W 0 as well as more refined approaches, such as quasiparticle self-consistent GW. We summarize results in the recent literature for the band gap, the band level alignment at surfaces, and optical transition energies in defective oxides, including wide gap oxide semiconductors and transition metal oxides. Correlated transition metal oxides are also discussed. For each method, we describe successes and drawbacks, emphasizing the challenges faced by the development of improved theoretical approaches. The theoretical section is preceded by a critical overview of the main experimental techniques needed to characterize the optoelectronic properties of semiconductors, including absorption and reflection spectroscopy, photoemission, and scanning tunneling spectroscopy (STS).

Fast terahertz optoelectronic amplitude modulator based on plasmonic metamaterial antenna arrays and graphene

NASA Astrophysics Data System (ADS)

Jessop, David S.; Sol, Christian W. O.; Xiao, Long; Kindness, Stephen J.; Braeuninger-Weimer, Philipp; Lin, Hungyen; Griffiths, Jonathan P.; Ren, Yuan; Kamboj, Varun S.; Hofmann, Stephan; Zeitler, J. Axel; Beere, Harvey E.; Ritchie, David A.; Degl'Innocenti, Riccardo

2016-02-01

The growing interest in terahertz (THz) technologies in recent years has seen a wide range of demonstrated applications, spanning from security screening, non-destructive testing, gas sensing, to biomedical imaging and communication. Communication with THz radiation offers the advantage of much higher bandwidths than currently available, in an unallocated spectrum. For this to be realized, optoelectronic components capable of manipulating THz radiation at high speeds and high signal-to-noise ratios must be developed. In this work we demonstrate a room temperature frequency dependent optoelectronic amplitude modulator working at around 2 THz, which incorporates graphene as the tuning medium. The architecture of the modulator is an array of plasmonic dipole antennas surrounded by graphene. By electrostatically doping the graphene via a back gate electrode, the reflection characteristics of the modulator are modified. The modulator is electrically characterized to determine the graphene conductivity and optically characterization, by THz time-domain spectroscopy and a single-mode 2 THz quantum cascade laser, to determine the optical modulation depth and cut-off frequency. A maximum optical modulation depth of ~ 30% is estimated and is found to be most (least) sensitive when the electrical modulation is centered at the point of maximum (minimum) differential resistivity of the graphene. A 3 dB cut-off frequency > 5 MHz, limited only by the area of graphene on the device, is reported. The results agree well with theoretical calculations and numerical simulations, and demonstrate the first steps towards ultra-fast, graphene based THz optoelectronic devices.

A new method for motion capture of the scapula using an optoelectronic tracking device: a feasibility study.

PubMed

Šenk, Miroslav; Chèze, Laurence

2010-06-01

Optoelectronic tracking systems are rarely used in 3D studies examining shoulder movements including the scapula. Among the reasons is the important slippage of skin markers with respect to scapula. Methods using electromagnetic tracking devices are validated and frequently applied. Thus, the aim of this study was to develop a new method for in vivo optoelectronic scapular capture dealing with the accepted accuracy issues of validated methods. Eleven arm positions in three anatomical planes were examined using five subjects in static mode. The method was based on local optimisation, and recalculation procedures were made using a set of five scapular surface markers. The scapular rotations derived from the recalculation-based method yielded RMS errors comparable with the frequently used electromagnetic scapular methods (RMS up to 12.6° for 150° arm elevation). The results indicate that the present method can be used under careful considerations for 3D kinematical studies examining different shoulder movements.

Light manipulation for organic optoelectronics using bio-inspired moth's eye nanostructures.

PubMed

Zhou, Lei; Ou, Qing-Dong; Chen, Jing-De; Shen, Su; Tang, Jian-Xin; Li, Yan-Qing; Lee, Shuit-Tong

2014-02-10

Organic-based optoelectronic devices, including light-emitting diodes (OLEDs) and solar cells (OSCs) hold great promise as low-cost and large-area electro-optical devices and renewable energy sources. However, further improvement in efficiency remains a daunting challenge due to limited light extraction or absorption in conventional device architectures. Here we report a universal method of optical manipulation of light by integrating a dual-side bio-inspired moth's eye nanostructure with broadband anti-reflective and quasi-omnidirectional properties. Light out-coupling efficiency of OLEDs with stacked triple emission units is over 2 times that of a conventional device, resulting in drastic increase in external quantum efficiency and current efficiency to 119.7% and 366 cd A(-1) without introducing spectral distortion and directionality. Similarly, the light in-coupling efficiency of OSCs is increased 20%, yielding an enhanced power conversion efficiency of 9.33%. We anticipate this method would offer a convenient and scalable way for inexpensive and high-efficiency organic optoelectronic designs.

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.

PubMed

Gong, Chuanhui; Zhang, Yuxi; Chen, Wei; Chu, Junwei; Lei, Tianyu; Pu, Junru; Dai, Liping; Wu, Chunyang; Cheng, Yuhua; Zhai, Tianyou; Li, Liang; Xiong, Jie

2017-12-01

With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high-performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe 2 and ReX 2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low-symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field-effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high-performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

Selection of physiological parameters for optoelectronic system supporting behavioral therapy of autistic children

NASA Astrophysics Data System (ADS)

Landowska, A.; Karpienko, K.; Wróbel, M.; Jedrzejewska-Szczerska, M.

2014-11-01

In this article the procedure of selection of physiological parameters for optoelectronic system supporting behavioral therapy of autistic children is proposed. Authors designed and conducted an experiment in which a group of 30 health volunteers (16 females and 14 males) were examined. Under controlled conditions people were exposed to a stressful situation caused by the picture or sound (1kHz constant sound, which was gradually silenced and finished with a shot sound). For each of volunteers, a set of physiological parameters were recorded, including: skin conductance, heart rate, peripheral temperature, respiration rate and electromyography. The selected characteristics were measured in different locations in order to choose the most suitable one for the designed therapy supporting system. The bio-statistical analysis allowed us to discern the proper physiological parameters that are most associated to changes due to emotional state of a patient, such as: skin conductance, temperatures and respiration rate. This allowed us to design optoelectronic sensors network for supporting behavioral therapy of children with autism.

GaAs MOEMS Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.

2003-03-01

Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vitalmore » step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.« less

Chain conformations and phase behavior of conjugated polymers.

PubMed

Kuei, Brooke; Gomez, Enrique D

2016-12-21

Conjugated polymers may play an important role in various emerging optoelectronic applications because they combine the chemical versatility of organic molecules and the flexibility, stretchability and toughness of polymers with semiconducting properties. Nevertheless, in order to achieve the full potential of conjugated polymers, a clear description of how their structure, morphology, and macroscopic properties are interrelated is needed. We propose that the starting point for understanding conjugated polymers includes understanding chain conformations and phase behavior. Efforts to predict and measure the persistence length have significantly refined our intuition of the chain stiffness, and have led to predictions of nematic-to-isotropic transitions. Exploring mixing between conjugated polymers and small molecules or other polymers has demonstrated tremendous advancements in attaining the needed properties for various optoelectronic devices. Current efforts continue to refine our knowledge of chain conformations and phase behavior and the factors that influence these properties, thereby providing opportunities for the development of novel optoelectronic materials based on conjugated polymers.

Development of Electronics for Low-Temperature Space Missions

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Dickman, John E.; Gerber, Scott S.; Overton, Eric

2001-01-01

Electronic systems that are capable of operating at cryogenic temperatures will be needed for many future NASA space missions, including deep space probes and spacecraft for planetary surface exploration. In addition to being able to survive the harsh deep space environment, low-temperature electronics would help improve circuit performance, increase system efficiency, and reduce payload development and launch costs. Terrestrial applications where components and systems must operate in low-temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation systems, and arctic exploration. An ongoing research and development project for the design, fabrication, and characterization of low-temperature electronics and supporting technologies at NASA Glenn Research Center focuses on efficient power systems capable of surviving in and exploiting the advantages of low-temperature environments. Supporting technologies include dielectric and insulating materials, semiconductor devices, passive power components, optoelectronic devices, and packaging and integration of the developed components into prototype flight hardware. An overview of the project is presented, including a description of the test facilities, a discussion of selected data from component testing, and a presentation of ongoing research activities being performed in collaboration with various organizations.

Characterization of the Twelve Channel 100/140 Micron Optical Fiber, Ribbon Cable and MTP Array Connector Assembly for Space Flight Environments

NASA Technical Reports Server (NTRS)

Ott, Melanie N.; Macmurphy, Shawn; Friedberg, Patricia; Day, John H. (Technical Monitor)

2002-01-01

Presented here is the second set of testing conducted by the Technology Validation Laboratory for Photonics at NASA Goddard Space Flight Center on the 12 optical fiber ribbon cable with MTP array connector for space flight environments. In the first set of testing the commercial 62.5/125 cable assembly was characterized using space flight parameters. The testing showed that the cable assembly would survive a typical space flight mission with the exception of a vacuum environment. Two enhancements were conducted to the existing technology to better suit the vacuum environment as well as the existing optoelectronics and increase the reliability of the assembly during vibration. The MTP assembly characterized here has a 100/140 optical commercial fiber and non outgassing connector and cable components. The characterization for this enhanced fiber optic cable assembly involved vibration, thermal and radiation testing. The data and results of this characterization study are presented which include optical in-situ testing.

Quantitative assessment of drawing tests in children with dyslexia and dysgraphia.

PubMed

Galli, Manuela; Cimolin, Veronica; Stella, Giacomo; De Pandis, Maria Francesca; Ancillao, Andrea; Condoluci, Claudia

2018-05-07

Drawing tests in children diagnosed with dyslexia and dysgraphia were quantitatively compared. Fourteen children with dysgraphia, 19 with dyslexia and 13 normally developing were asked to copy 3 figures: a circle, a square and a cross. An optoelectronic system allowed the acquisition of the drawing track in three-dimensions. The participants' head position and upper limb movements were measured as well. A set of parameters including movement duration, velocity, length of the trace, Range of Motion of the upper limb, was computed and compared among the 3 groups. Children with dyslexia traced the circle faster than the other groups. In the cross test, dyslexic participants showed a reduced execution time and increased velocity while drawing the horizontal line. Children with dyslexia were also faster in drawing certain sides of square with respect to the other groups. Copyright © 2018 Elsevier B.V. All rights reserved.

An optoelectronic detecting based environment perception experiment for primer students using multiple-layer laser scanner

NASA Astrophysics Data System (ADS)

Wang, Shifeng; Wang, Rui; Zhang, Pengfei; Dai, Xiang; Gong, Dawei

2017-08-01

One of the motivations of OptoBot Lab is to train primer students into qualified engineers or researchers. The series training programs have been designed by supervisors and implemented with tutoring for students to test and practice their knowledge from textbooks. An environment perception experiment using a 32 layers laser scanner is described in this paper. The training program design and laboratory operation is introduced. The four parts of the experiments which are preparation, sensor calibration, 3D space reconstruction, and object recognition, are the participating students' main tasks for different teams. This entire program is one of the series training programs that play significant role in establishing solid research skill foundation for opto-electronic students.

Design-for-reliability (DfR) of aerospace electronics: Attributes and challenges

NASA Astrophysics Data System (ADS)

Bensoussan, A.; Suhir, E.

The next generation of multi-beam satellite systems that would be able to provide effective interactive communication services will have to operate within a highly flexible architecture. One option to develop such flexibility is to employ microwaves and/or optoelectronic components and to make them reliable. The use of optoelectronic devices, equipments and systems will result indeed in significant improvement in the state-of-the-art only provided that the new designs will suggest a novel and effective architecture that will combine the merits of good functional performance, satisfactory mechanical (structural) reliability and high cost effectiveness. The obvious challenge is the ability to design and fabricate equipment based on EEE components that would be able to successfully withstand harsh space environments for the entire duration of the mission. It is imperative that the major players in the space industry, such as manufacturers, industrial users, and space agencies, understand the importance and the limits of the achievable quality and reliability of optoelectronic devices operated in harsh environments. It is equally imperative that the physics of possible failures is well understood and, if necessary, minimized, and that adequate Quality Standards are developed and employed. The space community has to identify and to develop the strategic approach for validating optoelectronic products. This should be done with consideration of numerous intrinsic and extrinsic requirements for the systems' performance. When considering a particular next generation optoelectronic space system, the space community needs to address the following major issues: proof of concept for this system, proof of reliability and proof of performance. This should be done with taking into account the specifics of the anticipated application. High operational reliability cannot be left to the prognostics and health monitoring/management (PHM) effort and stage, no matter how important and - ffective such an effort might be. Reliability should be pursued at all the stages of the equipment lifetime: design, product development, manufacturing, burn-in testing and, of course, subsequent PHM after the space apparatus is launched and operated.

Two Unipolar Terminal-Attractor-Based Associative Memories

NASA Technical Reports Server (NTRS)

Liu, Hua-Kuang; Wu, Chwan-Hwa

1995-01-01

Two unipolar mathematical models of electronic neural network functioning as terminal-attractor-based associative memory (TABAM) developed. Models comprise sets of equations describing interactions between time-varying inputs and outputs of neural-network memory, regarded as dynamical system. Simplifies design and operation of optoelectronic processor to implement TABAM performing associative recall of images. TABAM concept described in "Optoelectronic Terminal-Attractor-Based Associative Memory" (NPO-18790). Experimental optoelectronic apparatus that performed associative recall of binary images described in "Optoelectronic Inner-Product Neural Associative Memory" (NPO-18491).

High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

NASA Technical Reports Server (NTRS)

Connolly, J. C.; Goldstein, B.; Pultz, G. N.; Slavin, S. E.; Carlin, D. B.; Ettenberg, M.

1988-01-01

A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

All-fiber optoelectronic sensor with Bragg gratings for in-situ cure monitoring

NASA Astrophysics Data System (ADS)

Cusano, Andrea; Breglio, Giovanni; Cutolo, Antonello; Calabro, Antonio M.; Giordano, Michele; Nicolais, Luigi, II

2000-08-01

Real-time, in situ monitoring for quality control of the polymer cure process is of high interest, since thermoset polymer-matrix composite are widely used in large industrial areas: aeronautical, aerospace, automotive and civil due to their low cost/low weight features. However, their final properties are strongly dependence on the processing parameters, such as temperature and pressure sequence. The key-point for advanced composite materials is the possibility to have distributed and simultaneous monitoring of chemoreological and physical properties during the cure process. To this aim, we have developed and tested an optoelectronic fiber optic sensor based on the Fresnel principle able to monitor the variations of the refractive index due to the cure process of an epoxy based resin. Experimental results have been obtained on sensor capability to monitor the cure kinetics by assuming the refractive index as reaction co-ordinate. The integration with in-fiber Bragg grating in order to measure the local temperature has been discussed and tested.

Simulating optoelectronic systems for remote sensing with SENSOR

NASA Astrophysics Data System (ADS)

Boerner, Anko

2003-04-01

The consistent end-to-end simulation of airborne and spaceborne remote sensing systems is an important task and sometimes the only way for the adaptation and optimization of a sensor and its observation conditions, the choice and test of algorithms for data processing, error estimation and the evaluation of the capabilities of the whole sensor system. The presented software simulator SENSOR (Software ENvironment for the Simulation of Optical Remote sensing systems) includes a full model of the sensor hardware, the observed scene, and the atmosphere in between. It allows the simulation of a wide range of optoelectronic systems for remote sensing. The simulator consists of three parts. The first part describes the geometrical relations between scene, sun, and the remote sensing system using a ray tracing algorithm. The second part of the simulation environment considers the radiometry. It calculates the at-sensor radiance using a pre-calculated multidimensional lookup-table taking the atmospheric influence on the radiation into account. Part three consists of an optical and an electronic sensor model for the generation of digital images. Using SENSOR for an optimization requires the additional application of task-specific data processing algorithms. The principle of the end-to-end-simulation approach is explained, all relevant concepts of SENSOR are discussed, and examples of its use are given. The verification of SENSOR is demonstrated.

Optoelectronic switch matrix as a look-up table for residue arithmetic.

PubMed

Macdonald, R I

1987-10-01

The use of optoelectronic matrix switches to perform look-up table functions in residue arithmetic processors is proposed. In this application, switchable detector arrays give the advantage of a greatly reduced requirement for optical sources by comparison with previous optoelectronic residue processors.

A novel yet effective motion artefact reduction method for continuous physiological monitoring

NASA Astrophysics Data System (ADS)

Alzahrani, A.; Hu, S.; Azorin-Peris, V.; Kalawsky, R.; Zhang, X.; Liu, C.

2014-03-01

This study presents a non-invasive and wearable optical technique to continuously monitor vital human signs as required for personal healthcare in today's increasing ageing population. The study has researched an effective way to capture human critical physiological parameters, i.e., oxygen saturation (SaO2%), heart rate, respiration rate, body temperature, heart rate variability by a closely coupled wearable opto-electronic patch sensor (OEPS) together with real-time and secure wireless communication functionalities. The work presents the first step of this research; an automatic noise cancellation method using a 3-axes MEMS accelerometer to recover signals corrupted by body movement which is one of the biggest sources of motion artefacts. The effects of these motion artefacts have been reduced by an enhanced electronic design and development of self-cancellation of noise and stability of the sensor. The signals from the acceleration and the opto-electronic sensor are highly correlated thus leading to the desired pulse waveform with rich bioinformatics signals to be retrieved with reduced motion artefacts. The preliminary results from the bench tests and the laboratory setup demonstrate that the goal of the high performance wearable opto-electronics is viable and feasible.

Optoelectronic sensor device for monitoring ethanol concentration in winemaking applications

NASA Astrophysics Data System (ADS)

Jiménez-Márquez, F.; Vázquez, J.; Úbeda, J.; Rodríguez-Rey, J.; Sánchez-Rojas, J. L.

2015-05-01

The supervision of key variables such as sugar, alcohol, released CO2 and microbiological evolution in fermenting grape must is of great importance in the winemaking industry. However, the fermentation kinetics is assessed by monitoring the evolution of the density as it varies during a fermentation, since density is an indicator of the total amount of sugars, ethanol and glycerol. Even so, supervising the fermentation process is an awkward and non-comprehensive task, especially in wine cellars where production rates are massive, and enologists usually measure the density of the extracted samples from each fermentation tank manually twice a day. This work aims at the design of a fast, low-cost, portable and reliable optoelectronic sensor for measuring ethanol concentration in fermenting grape must samples. Different sets of model solutions, which contain ethanol, fructose, glucose, glycerol dissolved in water and emulate the grape must composition at different stages of the fermentation, were prepared both for calibration and validation. The absorption characteristics of these model solutions were analyzed by a commercial spectrophotometer in the NIR region, in order to identify key wavelengths from which valuable information regarding the sample composition can be extracted. Finally, a customized optoelectronic prototype based on absorbance measurements at two wavelengths belonging to the NIR region was designed, fabricated and successfully tested. The system, whose optoelectronics is reduced after a thorough analysis to only two LED lamps and their corresponding paired photodiodes operating at 1.2 and 1.3 μm respectively, calculates the ethanol content by a multiple linear regression.

Character Recognition Using Novel Optoelectronic Neural Network

DTIC Science & Technology

1993-04-01

interest will include machine learning and perception. Permanent Address: William M. Robinson c/o Dave and Judy Bartine 117 Westcliff Drive Harriman, TN 37748 This thesis was typed by William M. Robinson. 190 END

Experimental Optoelectronic Associative Memory

NASA Technical Reports Server (NTRS)

Chao, Tien-Hsin

1992-01-01

Optoelectronic associative memory responds to input image by displaying one of M remembered images. Which image to display determined by optoelectronic analog computation of resemblance between input image and each remembered image. Does not rely on precomputation and storage of outer-product synapse matrix. Size of memory needed to store and process images reduced.

Remote optoelectronic sensors for monitoring of nonlinear surfaces

NASA Astrophysics Data System (ADS)

Petrochenko, Andrew V.; Konyakhin, Igor A.

2015-05-01

Actually during construction of the high building actively are used objects of various nonlinear surface, for example, sinuous (parabolic or hyperbolic) roofs of the sport complexes that require automatic deformation control [1]. This type of deformation has character of deflection that is impossible to monitor objectively with just one optoelectronic sensor (which is fixed on this surface). In this article is described structure of remote optoelectronic sensor, which is part of the optoelectronic monitoring system of nonlinear surface, and mathematical transformation of exterior orientation sensor elements in the coordinates of control points.

Optoelectronic Devices and Materials

NASA Astrophysics Data System (ADS)

Sweeney, Stephen; Adams, Alfred

Unlike the majority of electronic devices, which are silicon based, optoelectronic devices are predominantly made using III-V semiconductor compounds such as GaAs, InP, GaN and GaSb and their alloys due to their direct band gap. Understanding the properties of these materials has been of vital importance in the development of optoelectronic devices. Since the first demonstration of a semiconductor laser in the early 1960s, optoelectronic devices have been produced in their millions, pervading our everyday lives in communications, computing, entertainment, lighting and medicine. It is perhaps their use in optical-fibre communications that has had the greatest impact on humankind, enabling high-quality and inexpensive voice and data transmission across the globe. Optical communications spawned a number of developments in optoelectronics, leading to devices such as vertical-cavity surface-emitting lasers, semiconductor optical amplifiers, optical modulators and avalanche photodiodes. In this chapter we discuss the underlying theory of operation of the most important optoelectronic devices. The influence of carrier-photon interactions is discussed in the context of producing efficient emitters and detectors. Finally we discuss how the semiconductor band structure can be manipulated to enhance device properties using quantum confinement and strain effects, and how the addition of dilute amounts of elements such as nitrogen is having a profound effect on the next generation of optoelectronic devices.

A three-dimensional metal grid mesh as a practical alternative to ITO

NASA Astrophysics Data System (ADS)

Jang, Sungwoo; Jung, Woo-Bin; Kim, Choelgyu; Won, Phillip; Lee, Sang-Gil; Cho, Kyeong Min; Jin, Ming Liang; An, Cheng Jin; Jeon, Hwan-Jin; Ko, Seung Hwan; Kim, Taek-Soo; Jung, Hee-Tae

2016-07-01

The development of a practical alternative to indium tin oxide (ITO) is one of the most important issues in flexible optoelectronics. In spite of recent progress in this field, existing approaches to prepare transparent electrodes do not satisfy all of their essential requirements. Here, we present a new substrate-embedded tall (~350 nm) and thin (~30 nm) three-dimensional (3D) metal grid mesh structure with a large area, which is prepared via secondary sputtering. This structure satisfies most of the essential requirements of transparent electrodes for practical applications in future opto-electronics: excellent optoelectronic performance (a sheet resistance of 9.8 Ω □-1 with a transmittance of 85.2%), high stretchability (no significant change in resistance for applied strains <15%), a sub-micrometer mesh period, a flat surface (a root mean square roughness of approximately 5 nm), no haze (approximately 0.5%), and strong adhesion to polymer substrates (it survives attempted detachment with 3M Scotch tape). Such outstanding properties are attributed to the unique substrate-embedded 3D structure of the electrode, which can be obtained with a high aspect ratio and in high resolution over large areas with a simple process. As a demonstration of its suitability for practical applications, our transparent electrode was successfully tested in a flexible touch screen panel. We believe that our approach opens up new practical applications in wearable electronics.The development of a practical alternative to indium tin oxide (ITO) is one of the most important issues in flexible optoelectronics. In spite of recent progress in this field, existing approaches to prepare transparent electrodes do not satisfy all of their essential requirements. Here, we present a new substrate-embedded tall (~350 nm) and thin (~30 nm) three-dimensional (3D) metal grid mesh structure with a large area, which is prepared via secondary sputtering. This structure satisfies most of the essential requirements of transparent electrodes for practical applications in future opto-electronics: excellent optoelectronic performance (a sheet resistance of 9.8 Ω □-1 with a transmittance of 85.2%), high stretchability (no significant change in resistance for applied strains <15%), a sub-micrometer mesh period, a flat surface (a root mean square roughness of approximately 5 nm), no haze (approximately 0.5%), and strong adhesion to polymer substrates (it survives attempted detachment with 3M Scotch tape). Such outstanding properties are attributed to the unique substrate-embedded 3D structure of the electrode, which can be obtained with a high aspect ratio and in high resolution over large areas with a simple process. As a demonstration of its suitability for practical applications, our transparent electrode was successfully tested in a flexible touch screen panel. We believe that our approach opens up new practical applications in wearable electronics. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr03060b

A New Regime of Nanoscale Thermal Transport: Collective Diffusion Increases Dissipation Efficiency

DTIC Science & Technology

2015-04-21

including thermal management in nanoelectronics and optoelectronics, thermoelectric devices, nanoenhanced photovoltaics , and nanoparticle-mediated...applications including thermoelectrics for energyharvesting, nanoparticle-mediated thermal therapy, nano- enhanced photovoltaics , and thermal... thermoelectric devices, nanoparticle- mediated thermal therapies, and nanoenhanced photovoltaics for improving clean-energy technologies. Author contributions

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

PubMed Central

Gong, Chuanhui; Zhang, Yuxi; Chen, Wei; Lei, Tianyu; Pu, Junru; Dai, Liping; Wu, Chunyang; Li, Liang

2017-01-01

Abstract With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed. PMID:29270337

Optoelectronic analogs of self-programming neural nets - Architecture and methodologies for implementing fast stochastic learning by simulated annealing

NASA Technical Reports Server (NTRS)

Farhat, Nabil H.

1987-01-01

Self-organization and learning is a distinctive feature of neural nets and processors that sets them apart from conventional approaches to signal processing. It leads to self-programmability which alleviates the problem of programming complexity in artificial neural nets. In this paper architectures for partitioning an optoelectronic analog of a neural net into distinct layers with prescribed interconnectivity pattern to enable stochastic learning by simulated annealing in the context of a Boltzmann machine are presented. Stochastic learning is of interest because of its relevance to the role of noise in biological neural nets. Practical considerations and methodologies for appreciably accelerating stochastic learning in such a multilayered net are described. These include the use of parallel optical computing of the global energy of the net, the use of fast nonvolatile programmable spatial light modulators to realize fast plasticity, optical generation of random number arrays, and an adaptive noisy thresholding scheme that also makes stochastic learning more biologically plausible. The findings reported predict optoelectronic chips that can be used in the realization of optical learning machines.

Time-Resolved Measurements in Optoelectronic Microbioanalysis

NASA Technical Reports Server (NTRS)

Bearman, Gregory; Kossakovski, Dmitri

2003-01-01

A report presents discussion of time-resolved measurements in optoelectronic microbioanalysis. Proposed microbioanalytical laboratory-on-a-chip devices for detection of microbes and toxic chemicals would include optoelectronic sensors and associated electronic circuits that would look for fluorescence or phosphorescence signatures of multiple hazardous biomolecules in order to detect which ones were present in a given situation. The emphasis in the instant report is on gating an active-pixel sensor in the time domain, instead of filtering light in the wavelength domain, to prevent the sensor from responding to a laser pulse used to excite fluorescence or phosphorescence while enabling the sensor to respond to the decaying fluorescence or phosphorescence signal that follows the laser pulse. The active-pixel sensor would be turned on after the laser pulse and would be used to either integrate the fluorescence or phosphorescence signal over several lifetimes and many excitation pulses or else take time-resolved measurements of the fluorescence or phosphorescence. The report also discusses issues of multiplexing and of using time-resolved measurements of fluorophores with known different fluorescence lifetimes to distinguish among them.

Chemical and charge transfer studies on interfaces of a conjugated polymer and ITO

NASA Astrophysics Data System (ADS)

David, Tanya M. S.; Arasho, Wondwosson; Smith, O'Neil; Hong, Kunlun; Bonner, Carl; Sun, Sam-Shajing

2017-08-01

Conjugated oligomers and polymers are very attractive for potential future plastic electronic and opto-electronic device applications such as plastic photo detectors and solar cells, thermoelectric devices, field effect transistors, and light emitting diodes. Understanding and optimizing charge transport between an active polymer layer and conductive substrate is critical to the optimization of polymer based electronic and opto-electronic devices. This study focused on the design, synthesis, self-assembly, and electron transfers and transports of a phosphonic acid end-functionalized polyphenylenevinylene (PPV) that was covalently attached and self-assembled onto an Indium Tin Oxide (ITO) substrate. This study demonstrated how atomic force microscopy (AFM) can be an effective characterization technique in conjunction with conventional electron transfer methods, including cyclic voltammetry (CV), towards determining electron transfer rates in polymer and polymer/conductor interface systems. This study found that the electron transfer rates of covalently attached and self-assembled films were much faster than the spin coated films. The knowledge from this study can be very useful for designing potential polymer based electronic and opto-electronic thin film devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manser, Joseph S.; Christians, Jeffrey A.; Kamat, Prashant V.

Here, a new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX 3 stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewedmore » with an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CH 3NH 3PbI 3) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2- dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.« less

Securing Information with Complex Optical Encryption Networks

DTIC Science & Technology

2015-08-11

Network Security, Network Vulnerability , Multi-dimentional Processing, optoelectronic devices 16. SECURITY CLASSIFICATION OF: 17. LIMITATION... optoelectronic devices and systems should be analyzed before the retrieval, any hostile hacker will need to possess multi-disciplinary scientific...sophisticated optoelectronic principles and systems where he/she needs to process the information. However, in the military applications, most military

Optoelectronics and defect levels in hydroxyapatite by first-principles.

PubMed

Avakyan, Leon A; Paramonova, Ekaterina V; Coutinho, José; Öberg, Sven; Bystrov, Vladimir S; Bugaev, Lusegen A

2018-04-21

Hydroxyapatite (HAp) is an important component of mammal bones and teeth, being widely used in prosthetic implants. Despite the importance of HAp in medicine, several promising applications involving this material (e.g., in photo-catalysis) depend on how well we understand its fundamental properties. Among the ones that are either unknown or not known accurately, we have the electronic band structure and all that relates to it, including the bandgap width. We employ state-of-the-art methodologies, including density hybrid-functional theory and many-body perturbation theory within the dynamically screened single-particle Green's function approximation, to look at the optoelectronic properties of HAp. These methods are also applied to the calculation of defect levels. We find that the use of a mix of (semi-)local and exact exchange in the exchange-correlation functional brings a drastic improvement to the band structure. Important side effects include improvements in the description of dielectric and optical properties not only involving conduction band (excited) states but also the valence. We find that the highly dispersive conduction band bottom of HAp originates from anti-bonding σ* states along the ⋯OH-OH-⋯ infinite chain, suggesting the formation of a conductive 1D-ice phase. The choice of the exchange-correlation treatment to the calculation of defect levels was also investigated by using the OH-vacancy as a testing model. We find that donor and acceptor transitions obtained within semi-local density functional theory (DFT) differ from those of hybrid-DFT by almost 2 eV. Such a large discrepancy emphasizes the importance of using a high-quality description of the electron-electron interactions in the calculation of electronic and optical transitions of defects in HAp.

Optoelectronics and defect levels in hydroxyapatite by first-principles

NASA Astrophysics Data System (ADS)

Avakyan, Leon A.; Paramonova, Ekaterina V.; Coutinho, José; Öberg, Sven; Bystrov, Vladimir S.; Bugaev, Lusegen A.

2018-04-01

Hydroxyapatite (HAp) is an important component of mammal bones and teeth, being widely used in prosthetic implants. Despite the importance of HAp in medicine, several promising applications involving this material (e.g., in photo-catalysis) depend on how well we understand its fundamental properties. Among the ones that are either unknown or not known accurately, we have the electronic band structure and all that relates to it, including the bandgap width. We employ state-of-the-art methodologies, including density hybrid-functional theory and many-body perturbation theory within the dynamically screened single-particle Green's function approximation, to look at the optoelectronic properties of HAp. These methods are also applied to the calculation of defect levels. We find that the use of a mix of (semi-)local and exact exchange in the exchange-correlation functional brings a drastic improvement to the band structure. Important side effects include improvements in the description of dielectric and optical properties not only involving conduction band (excited) states but also the valence. We find that the highly dispersive conduction band bottom of HAp originates from anti-bonding σ* states along the ⋯OH-OH-⋯ infinite chain, suggesting the formation of a conductive 1D-ice phase. The choice of the exchange-correlation treatment to the calculation of defect levels was also investigated by using the OH-vacancy as a testing model. We find that donor and acceptor transitions obtained within semi-local density functional theory (DFT) differ from those of hybrid-DFT by almost 2 eV. Such a large discrepancy emphasizes the importance of using a high-quality description of the electron-electron interactions in the calculation of electronic and optical transitions of defects in HAp.

Flexible opto-electronics enabled microfluidics systems with cloud connectivity for point-of-care micronutrient analysis.

PubMed

Lee, Stephen; Aranyosi, A J; Wong, Michelle D; Hong, Ji Hyung; Lowe, Jared; Chan, Carol; Garlock, David; Shaw, Scott; Beattie, Patrick D; Kratochvil, Zachary; Kubasti, Nick; Seagers, Kirsten; Ghaffari, Roozbeh; Swanson, Christina D

2016-04-15

In developing countries, the deployment of medical diagnostic technologies remains a challenge because of infrastructural limitations (e.g. refrigeration, electricity), and paucity of health professionals, distribution centers and transportation systems. Here we demonstrate the technical development and clinical testing of a novel electronics enabled microfluidic paper-based analytical device (EE-μPAD) for quantitative measurement of micronutrient concentrations in decentralized, resource-limited settings. The system performs immune-detection using paper-based microfluidics, instrumented with flexible electronics and optoelectronic sensors in a mechanically robust, ultrathin format comparable in size to a credit card. Autonomous self-calibration, plasma separation, flow monitoring, timing and data storage enable multiple devices to be run simultaneously. Measurements are wirelessly transferred to a mobile phone application that geo-tags the data and transmits it to a remote server for real time tracking of micronutrient deficiencies. Clinical tests of micronutrient levels from whole blood samples (n=95) show comparable sensitivity and specificity to ELISA-based tests. These results demonstrate instantaneous acquisition and global aggregation of diagnostics data using a fully integrated point of care system that will enable rapid and distributed surveillance of disease prevalence and geographical progression. Copyright © 2015 Elsevier B.V. All rights reserved.

Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.

PubMed

Jariwala, Deep; Davoyan, Artur R; Tagliabue, Giulia; Sherrott, Michelle C; Wong, Joeson; Atwater, Harry A

2016-09-14

We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

Recent Advances in Biointegrated Optoelectronic Devices.

PubMed

Xu, Huihua; Yin, Lan; Liu, Chuan; Sheng, Xing; Zhao, Ni

2018-05-28

With recent progress in the design of materials and mechanics, opportunities have arisen to improve optoelectronic devices, circuits, and systems in curved, flexible, stretchable, and biocompatible formats, thereby enabling integration of customized optoelectronic devices and biological systems. Here, the core material technologies of biointegrated optoelectronic platforms are discussed. An overview of the design and fabrication methods to form semiconductor materials and devices in flexible and stretchable formats is presented, strategies incorporating various heterogeneous substrates, interfaces, and encapsulants are discussed, and their applications in biomimetic, wearable, and implantable systems are highlighted. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Private sector data collection on optoelectronics markets and technologies in the U.S.

NASA Astrophysics Data System (ADS)

Polishuk, Paul J.; Taylor, K.

1992-05-01

Information Gatekeepers Inc. has been in the business of collecting and analyzing information in the fiber optics and optoelectronics industries for the past fourteen years through its publishing and consulting businesses. Since optoelectronic technologies are well reported by the scientific journals and conferences, only data on markets, competitive trends, production capabilities, etc., are discussed in this paper. The paper reviews the present situation of private sector data collection on optoelectronics technologies and markets, the problems that exist in data collection, and possible solutions to what is perceived as a serious national problem.

Prototype Focal-Plane-Array Optoelectronic Image Processor

NASA Technical Reports Server (NTRS)

Fang, Wai-Chi; Shaw, Timothy; Yu, Jeffrey

1995-01-01

Prototype very-large-scale integrated (VLSI) planar array of optoelectronic processing elements combines speed of optical input and output with flexibility of reconfiguration (programmability) of electronic processing medium. Basic concept of processor described in "Optical-Input, Optical-Output Morphological Processor" (NPO-18174). Performs binary operations on binary (black and white) images. Each processing element corresponds to one picture element of image and located at that picture element. Includes input-plane photodetector in form of parasitic phototransistor part of processing circuit. Output of each processing circuit used to modulate one picture element in output-plane liquid-crystal display device. Intended to implement morphological processing algorithms that transform image into set of features suitable for high-level processing; e.g., recognition.

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Technical Reports Server (NTRS)

Pavlidis, Dimitris

1991-01-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Astrophysics Data System (ADS)

Pavlidis, Dimitris

1991-02-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Fused thiophene-based conjugated polymers and their use in optoelectronic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Facchetti, Antonio; Marks, Tobin J.; Takai, Atsuro

The present teachings relate to polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds generally include as repeating units at least one annulated thienyl-vinylene-thienyl (TVT) unit and at least one other pi-conjugated unit. The annulated TVT unit can be represented by the formula: ##STR00001## where Cy.sup.1 and Cy.sup.2 can be a five- or six-membered carbocyclic ring. The annulated TVT unit can be optionally substituted at any available ring atom(s), and can be covalently linked tomore » the other pi-conjugated unit via either the thiophene rings or the carbocyclic rings Cy.sup.1 and Cy.sup.2. The other pi-conjugated unit can be a conjugated linear linker including one or more unsaturated bonds, or a conjugated cyclic linker including one or more carbocyclic and/or heterocyclic rings.« less

Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices

NASA Astrophysics Data System (ADS)

Zheng, Zhaoqiang; Zhang, Tanmei; Yao, Jiandomg; Zhang, Yi; Xu, Jiarui; Yang, Guowei

2016-06-01

Although two-dimensional (2D) materials have attracted considerable research interest for use in the development of innovative wearable optoelectronic systems, the integrated optoelectronic performance of 2D materials photodetectors, including flexibility, transparency, broadband response and stability in air, remains quite low to date. Here, we demonstrate a flexible, transparent, high-stability and ultra-broadband photodetector made using large-area and highly-crystalline WSe2 films that were prepared by pulsed-laser deposition (PLD). Benefiting from the 2D physics of WSe2 films, this device exhibits excellent average transparency of 72% in the visible range and superior photoresponse characteristics, including an ultra-broadband detection spectral range from 370 to 1064 nm, reversible photoresponsivity approaching 0.92 A W-1, external quantum efficiency of up to 180% and a relatively fast response time of 0.9 s. The fabricated photodetector also demonstrates outstanding mechanical flexibility and durability in air. Also, because of the wide compatibility of the PLD-grown WSe2 film, we can fabricate various photodetectors on multiple flexible or rigid substrates, and all these devices will exhibit distinctive switching behavior and superior responsivity. These indicate a possible new strategy for the design and integration of flexible, transparent and broadband photodetectors based on large-area WSe2 films, with great potential for practical applications in the wearable optoelectronic devices.

SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Optoelectronic processor in the form of a hybrid microcircuit

NASA Astrophysics Data System (ADS)

Evtikhiev, N. N.; Esepkina, N. A.; Dolgii, V. A.; Lavrov, A. P.; Khotyanov, B. M.; Chernokozhin, V. V.; Shestak, S. A.

1995-10-01

An optoelectronic processor in the form of a hybrid microcircuit is described. An analysis is made of the feasibility of developing a new class of optoelectronic processors which are hybrid microcircuits and can operate both as self-contained specialised computers and also as functional components of computing systems.

Six Classes of Diffraction-Based Optoelectronic Instruments

NASA Technical Reports Server (NTRS)

Spremo, Stevan; Fuhr, Peter; Schipper, John

2003-01-01

Six classes of diffraction-based optoelectronic instruments have been invented as means for wavelength-based processing of light. One family of anticipated applications lies in scientific instrumentation for studying chemical and physical reactions that affect and/or are affected differently by light of different wavelengths or different combinations of wavelengths. Another family of anticipated applications lies in optoelectronic communication systems.

A comparative analysis of optical and conventional axiography for the analysis of temporomandibular joint movements.

PubMed

Wagner, Arne; Seemann, Rudolf; Schicho, Kurt; Ewers, Rolf; Piehslinger, Eva

2003-11-01

Currently available systems for pantographic tracing are heavy, bulky, and can interfere with jaw movements. This study describes the development and clinical application of optoelectronic axiography designed to overcome system inherent problems of conventional bulky frame-based registration axiography. The purpose of this study is the comparison of the newly developed system and conventional axiography. Three-dimensional recordings of condylar pathways were acquired by means of infrared digitizers interfaced to newly developed software. Ten distinct curves in each of 10 subjects were recorded by synchronous optoelectronic axiography (100 tracings) and by conventional axiography (100 tracings). Usually, two 3-dimensional (3D) light weight sensors are provisionally fixed to the facial surface of a maxillary and mandibular incisor by means of a single orthodontic bracket. To allow for direct comparison of all 100 pairs of curves in this study, the 3D sensors of the optoelectronic system were attached to the bulky double face-bow system of the axiograph. The conformity of tracings (protrusion, opening/closing, mediotrusion, and laterotrusion) was evaluated by means of correlation analysis. Resulting axiographic recordings from both systems were evaluated by 3 experts (dentists, experienced in axiographic investigations, who were blind to the source of the data), focusing on standardized qualitative criteria of the recordings (homogeneity/smoothness, pathway-characteristics, excursion, and left/right-symmetry). After testing for normal distribution of the ratio scaled data (length of pathway, horizontal condylar inclination [HCI], Bennett angle) with the Kolmogoroff-Smirnov test (alpha=.01), axiographic curves were quantitatively compared by means of an intraclass correlation coefficient ([ICC] alpha =.01). The Wilcoxon test (alpha=.01) was used to evaluate equivalence of ordinally scaled values (homogeneity of tracings) and Cohen's Kappa was used to compare excursion and left/right symmetry. High correspondence between curves recorded by conventional and optoelectronic axiography was observed. The mean differences of lengths between the protrusive, opening/closing, and mediotrusive pathways were 0.0 mm, 0.6 mm, and 0.1 mm, respectively. Pathways and values for HCI were found highly correlated (pathways: 95% CI of ICC 0.9776-0.9908; HCI: 95% CI of ICC 0.8641-0.9597). The 95% CIs for differences of pathways, HCI-value, and Bennett angle were -0.1mm/0.3mm, -3.4 degrees/1.9 degrees, and -2.8 degrees/4.8 degrees, respectively. Pathway characteristics also corresponded well (Cohen's Kappa: 0.73 for symmetric and 0.72 for asymmetric movements), 0.77 for left/right symmetry, whereas other characteristics showed less significant correlation (Cohen's Kappa of excursion: 0.21 for symmetric and 0.09 for asymmetric movements, homogeneity: 0.08 for symmetric and 0.15 for asymmetric movements). Within the limitations of this study, optoelectronic axiography proved to be an applicable, promising technique, leading to diagnostic interpretations equivalent (with respect to the CIs) to conventional axiography.

Structured organic materials and devices using low-energy particle beams

DOEpatents

Vardeny, Z. Valy; Li, Sergey; Delong, Matthew C.; Jiang, Xiaomei

2005-09-13

Organic materials exposed to an electron beam for patterning a substrate (1) to make an optoelectronic organic device which includes a source, a drain, gate dielectric layer (4), and a substrate for emitting light.

Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.

PubMed

Li, Dong; Wang, Biao; Chen, Mingyuan; Zhou, Jun; Zhang, Zengxing

2017-06-01

p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe 2 ) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe 2 enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe 2 heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

NASA Astrophysics Data System (ADS)

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-07-01

Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

Bringing together integration technologies in GaAs, InP and Si to deliver low-cost high performance DWDM optoelectronic components and solutions

NASA Astrophysics Data System (ADS)

Carter, Andrew C.; Wale, Michael J.; Simmons, T.; Whitbread, Neil; Asghari, M.

2003-06-01

A key attribute emerging in the optoelectronic component supply industry is the ability to deliver 'solution level' products rather than discrete optical components to equipment manufacturers. This approach is primarily aimed at reducing cost for the equipment manufacturer both in engineering and assembly. Such 'solutions' must be designed to be cost effective - offering costs substantially below discrete components - and must be compatible with subcontract board manufacture without the traditional and expensive skills of fibre handling, splicing and management. Examples of 'solutions' in this context may be the core of a multifunctional OADM or a DWDM laser transmitter subsystem, with modulation, wavelength and power management all included in a simple to use module. Essential to the cost effective production of such solutions is a high degree of optical/optoelectronic integration. Co-packaging of discrete components and electronics into modules will not deliver the cost reduction demanded. At Bookham Technology we have brought together what we believe to be the three key integration technologies - InP for monolithic tunable sources, GaAs for high performance integrated modulation and ASOC for smart passives and hybrid platforms - which can deliver this cost reduction, together with performance enhancement, over a wide range of applications. In the paper we will demonstrate and compare our above integration approaches with the competing alternatives and seek to show how the power of integration is finally being harnessed in optoelectronics, delivering radical cost reduction as well as enabling system concepts virtually impossible to achieve with discrete components. In the paper we will demonstrate and compare our above integration approaches with the competing alternatives and seek to show how the power of integration is finally being harnessed in optoelectronics, delivering radical cost reduction as well as enabling system concepts virtually impossible to achieve with discrete components.

Miniature Sensor Probe for O2, CO2, and H2O Monitoring in Portable Life Support Systems

NASA Technical Reports Server (NTRS)

Delgado, Jesus; Chambers, Antja

2013-01-01

A miniature sensor probe, composed of four sensors which monitor the partial pressure of O2, CO2, H2O, and temperature, designed to operate in the portable life support system (PLSS), has been demonstrated. The probe provides an important advantage over existing technology in that it is able to operate reliably while wet. These luminescence-based fiber optic sensors consist of an indicator chemistry immobilized in a polymeric film, whose emission lifetime undergoes a strong change upon a reversible interaction with the target gas. Each sensor includes chemistry specifically sensitive to one target parameter. All four sensors are based on indicator chemistries that include luminescent dyes from the same chemical family, and therefore exhibit similar photochemical properties, which allow performing measurements of all the sensors by a single, compact, low-power optoelectronic unit remotely connected to the sensors by an electromagnetic interference-proof optical fiber cable. For space systems, using these miniature sensor elements with remote optoelectronics provides unmatched design flexibility for measurements in highly constrained volume systems such as the PLSS. A 10 mm diameter and 15 mm length prototype multiparameter probe was designed, fabricated, tested, and demonstrated over a wide operational range of gas concentration, humidity, and temperature relevant to operation in the PLSS. The sensors were evaluated for measurement range, precision, accuracy, and response time in temperatures ranging from 50 aF-150 aF and relative humidity from dry to 100% RH. Operation of the sensors in water condensation conditions was demonstrated wherein the sensors not only tolerated liquid water but actually operated while wet.

Graduate studies on optoelectronics in Argentina: an experience

NASA Astrophysics Data System (ADS)

Fernández, Juan C.; Garea, María. T.; Isaurralde, Silvia; Perez, Liliana I.; Raffo, Carlos A.

2014-07-01

The number of graduate programs in Optoelectronics in Argentina is scarce. The current Optics and Photonics Education Directory lists only three programs. One of them was launched in 2001 in the Facultad de Ingeniería (College of Engineering), Universidad de Buenos Aires (UBA). This was the first graduate program in the field, leading to a Master Degree in Optoelectronics. This decision arose from the demand of telecommunications industries and several estate- or private-funded research institutions working with us in the fields of lasers, optics, remote sensing, etc. A great bonus was the steady work, during several decades, of research groups in the College on the development of different type of lasers and optical non destructive tests and their engineering applications. As happened in many engineering graduate programs in Argentina at that time, few non full-time students could finish their studies, which called for 800 hours of traditional lecture-recitation classes, and the Master Thesis. In recent years Argentine Education authorities downsized the Master programs to 700 hours of blended learning and we redesigned the Graduate Optoelectronic Engineering Program to meet the challenge, dividing it in two successive one year programs, the first aimed at a professional training for almost immediate insertion in the labor market (called Especialización en Ingeniería Optoelectrónica), and the second (called Maestría en Ingeniería Optoelectrónica y Fotónica) aimed at a more academic and research target to comply with the UBA standards for Master degrees. The present work is a presentation of the new program design, which has begun in the current year.

Symmetric Gain Optoelectronic Mixers for LADAR

DTIC Science & Technology

2008-12-01

photodetector in the receiver is used as an optoelectronic mixer (OEM). Adding gain to the optoelectronic mixer allows the following transimpedance ...output is the low frequency difference signal, several orders of magnitude lower than the LO signal. Therefore, the gain of the transimpedance ... amplifier (TZA) following the photodetector can be increased, improving LADAR range. The metal-semiconductor- metal (MSM) Schottky detector is such a

Epidermal Inorganic Optoelectronics for Blood Oxygen Measurement.

PubMed

Li, Haicheng; Xu, Yun; Li, Xiaomin; Chen, Ying; Jiang, Yu; Zhang, Changxing; Lu, Bingwei; Wang, Jian; Ma, Yinji; Chen, Yihao; Huang, Yin; Ding, Minquang; Su, Honghong; Song, Guofeng; Luo, Yi; Feng, X

2017-05-01

Flexible and stretchable optoelectronics, built-in inorganic semiconductor materials, offer a wide range of unprecedented opportunities and will redefine the conventional rigid optoelectronics in biological application and medical measurement. However, a significant bottleneck lies in the brittleness nature of rigid semiconductor materials and the performance's extreme sensitivity to the light intensity variation due to human skin deformation while measuring physical parameters. In this study, the authors demonstrate a systematic strategy to design an epidermal inorganic optoelectronic device by using specific strain-isolation design, nanodiamond thinning, and hybrid transfer printing. The authors propose all-in-one suspension structure to achieve the stretchability and conformability for surrounding environment, and they propose a two-step transfer printing method for hybrid integrating III-V group emitting elements, Si-based photodetector, and interconnects. Owing to the excellent flexibility and stretchability, such device is totally conformal to skin and keeps the constant light transmission between emitting element and photodetector as well as the signal stability due to skin deformation. This method opens a route for traditional inorganic optoelectronics to achieve flexibility and stretchability and improve the performance of optoelectronics for biomedical application. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

OPTOELECTRONICS, FIBER OPTICS, AND OTHER ASPECTS OF QUANTUM ELECTRONICS: Time analyzing image converter with a microchannel plate at the input

NASA Astrophysics Data System (ADS)

Dashevskiĭ, B. E.; Podvyaznikov, V. A.; Prokhorov, A. M.; Chevokin, V. K.

1989-08-01

An image converter with interchangeable photocathodes was used in tests on a microchannel plate employed as a photoemitter. The image converter was operated in the linear slit-scanning regime. This image converter was found to be a promising tool for laser plasma diagnostics.

Impact of Data Transmission over 10 Gbps on High-Density and Low-Cost Optoelectronic Module with Polynorbornene Waveguides

NASA Astrophysics Data System (ADS)

Ito, Yuka; Terada, Shinsuke; Arai, Shinya; Fujiwara, Makoto; Mori, Tetsuya; Choki, Koji; Fukushima, Takafumi; Koyanagi, Mitsumasa

2012-04-01

We proposed a rigid/flex optoelectronic (O/E) module with 48-channel polymeric waveguides for short-distance board-level optical interconnection. A flexible O/E test module was fabricated in the following two steps by using standard packaging processes. First, two vertical cavity surface emitting laser diodes (VCSELs) and one VCSEL driver (VD) were flip-chip bonded to a completed flexible printed circuit board (PCB), and two photodiodes (PDs) and one transimpedance amplifier/limiting amplifier (TIA/LA) to another flexible PCB. Second, the two flexible PCBs were attached with a polynorbornene (PNB) sheet in which high-density PNB waveguides were formed by UV exposure. Active areas of VCSELs and PDs on the flexible PCBs were aligned to micromirrors of the waveguides with -6 µm offset toward the signal propagation direction. We successfully demonstrated data transmission over 10 Gbps and low inter-channel crosstalk of less than -20 dB was achieved in the flexible O/E test module with 120-mm-long and 62.5-µm-pitch waveguides.

Injectable, cellular-scale optoelectronics with applications for wireless optogenetics.

PubMed

Kim, Tae-il; McCall, Jordan G; Jung, Yei Hwan; Huang, Xian; Siuda, Edward R; Li, Yuhang; Song, Jizhou; Song, Young Min; Pao, Hsuan An; Kim, Rak-Hwan; Lu, Chaofeng; Lee, Sung Dan; Song, Il-Sun; Shin, Gunchul; Al-Hasani, Ream; Kim, Stanley; Tan, Meng Peun; Huang, Yonggang; Omenetto, Fiorenzo G; Rogers, John A; Bruchas, Michael R

2013-04-12

Successful integration of advanced semiconductor devices with biological systems will accelerate basic scientific discoveries and their translation into clinical technologies. In neuroscience generally, and in optogenetics in particular, the ability to insert light sources, detectors, sensors, and other components into precise locations of the deep brain yields versatile and important capabilities. Here, we introduce an injectable class of cellular-scale optoelectronics that offers such features, with examples of unmatched operational modes in optogenetics, including completely wireless and programmed complex behavioral control over freely moving animals. The ability of these ultrathin, mechanically compliant, biocompatible devices to afford minimally invasive operation in the soft tissues of the mammalian brain foreshadow applications in other organ systems, with potential for broad utility in biomedical science and engineering.

Materials for optoelectronic devices

DOEpatents

Shiang, Joseph John; Smigelski, Jr., Paul Michael

2015-01-27

Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

Shape-Dependent Optoelectronic Cell Lysis**

PubMed Central

Kremer, Clemens; Witte, Christian; Neale, Steven L; Reboud, Julien; Barrett, Michael P; Cooper, Jonathan M

2014-01-01

We show an electrical method to break open living cells amongst a population of different cell types, where cell selection is based upon their shape. We implement the technique on an optoelectronic platform, where light, focused onto a semiconductor surface from a video projector creates a reconfigurable pattern of electrodes. One can choose the area of cells to be lysed in real-time, from single cells to large areas, simply by redrawing the projected pattern. We show that the method, based on the “electrical shadow” that the cell casts, allows the detection of rare cell types in blood (including sleeping sickness parasites), and has the potential to enable single cell studies for advanced molecular diagnostics, as well as wider applications in analytical chemistry. PMID:24402800

4 channels x 10-Gbps optoelectronic transceiver based on silicon optical bench technology

NASA Astrophysics Data System (ADS)

Chen, Chin T.; Hsiao, Hsu L.; Chang, Chia. C.; Shen, Po K.; Lu, Guan F.; Lee, Yun C.; Chang, Shou F.; Lin, Yo S.; Wu, Mount L.

2012-01-01

In this paper, a bi-directional 4-channel x 10-Gbps optoelectronic transceiver based on this silicon optical bench (SiOB) technology is developed. A bi-directional optical sub-assembly (BOSA), fiber ribbon assembly, PCB with high frequency trace design, transmitter driver, and receiver TIA IC are included in this transceiver. The BOSA and PCB also have some specific design for conventional chip-on-board (COB) process. In eye diagram measurement, the transmitter can pass 10-G Ethernet eye mask with 25% margin at room temperature; Bit-error-rate (BER) performance from the transmitter to receiver via 10-meter fiber can achieve 10-12 order, which confirm the transceiver's ability of 10-Gbps data transmission per a channel.

Opto-electronic characterization of third-generation solar cells.

PubMed

Neukom, Martin; Züfle, Simon; Jenatsch, Sandra; Ruhstaller, Beat

2018-01-01

We present an overview of opto-electronic characterization techniques for solar cells including light-induced charge extraction by linearly increasing voltage, impedance spectroscopy, transient photovoltage, charge extraction and more. Guidelines for the interpretation of experimental results are derived based on charge drift-diffusion simulations of solar cells with common performance limitations. It is investigated how nonidealities like charge injection barriers, traps and low mobilities among others manifest themselves in each of the studied cell characterization techniques. Moreover, comprehensive parameter extraction for an organic bulk-heterojunction solar cell comprising PCDTBT:PC 70 BM is demonstrated. The simulations reproduce measured results of 9 different experimental techniques. Parameter correlation is minimized due to the combination of various techniques. Thereby a route to comprehensive and accurate parameter extraction is identified.

A Brief Review of OPT101 Sensor Application in Near-Infrared Spectroscopy Instrumentation for Intensive Care Unit Clinics

PubMed Central

Li, Ting; Zhong, Fulin; Pan, Boan; Li, Zebin; Huang, Chong; Deng, Zishan

2017-01-01

The optoelectronic sensor OPT101 have merits in advanced optoelectronic response characteristics at wavelength range for medical near-infrared spectroscopy and small-size chip design with build-in trans-impedance amplifier. Our lab is devoted to developing a series of portable near-infrared spectroscopy (NIRS) devices embedded with OPT101 for applications in intensive care unit clinics, based on NIRS principle. Here we review the characteristics and advantages of OPT101 relative to clinical NIRS instrumentation, and the most recent achievements, including early-diagnosis and therapeutic effect evaluation of thrombus, noninvasive monitoring of patients' shock severity, and fatigue evaluation. The future prospect on OPT101 improvements in noninvasive clinical applications is also discussed. PMID:28757564

High-temperature fiber-optic lever microphone

NASA Technical Reports Server (NTRS)

Zuckerwar, Allan J.; Cuomo, Frank W.; Nguyen, Trung D.; Rizzi, Stephen A.; Clevenson, Sherman A.

1995-01-01

The design and construction of a fiber-optic lever microphone, capable of operating continuously at temperatures up to 538 C (1000 F) are described. The design is based on the theoretical sensitivities of each of the microphone system components, namely, a cartridge containing a stretched membrane, an optical fiber probe, and an optoelectronic amplifier. Laboratory calibrations include the pistonphone sensitivity and harmonic distortion at ambient temperature, and frequency response, background noise, and optical power transmission at both ambient and elevated temperatures. A field test in the Thermal Acoustic Fatigue Apparatus at Langley Research Center, in which the microphone was subjected to overall sound-pressure levels in the range of 130-160 dB and at temperatures from ambient to 538 C, revealed good agreement with a standard probe microphone.

Molecular switches and motors on surfaces.

PubMed

Pathem, Bala Krishna; Claridge, Shelley A; Zheng, Yue Bing; Weiss, Paul S

2013-01-01

Molecular switches and motors respond structurally, electronically, optically, and/or mechanically to external stimuli, testing and potentially enabling extreme miniaturization of optoelectronic devices, nanoelectromechanical systems, and medical devices. The assembly of motors and switches on surfaces makes it possible both to measure the properties of individual molecules as they relate to their environment and to couple function between assembled molecules. In this review, we discuss recent progress in assembling molecular switches and motors on surfaces, measuring static and dynamic structures, understanding switching mechanisms, and constructing functional molecular materials and devices. As demonstrative examples, we choose a representative molecule from three commonly studied classes including molecular switches, photochromic molecules, and mechanically interlocked molecules. We conclude by offering perspectives on the future of molecular switches and motors on surfaces.

NASA Tech Briefs, November 2009

NASA Technical Reports Server (NTRS)

2009-01-01

Topics covered include: Cryogenic Chamber for Servo-Hydraulic Materials Testing; Apparatus Measures Thermal Conductance Through a Thin Sample from Cryogenic to Room Temperature; Rover Attitude and Pointing System Simulation Testbed; Desktop Application Program to Simulate Cargo-Air-Drop Tests; Multimodal Friction Ignition Tester; Small-Bolt Torque-Tension Tester; Integrated Spacesuit Audio System Enhances Speech Quality and Reduces Noise; Hardware Implementation of a Bilateral Subtraction Filter; Simple Optoelectronic Feedback in Microwave Oscillators; Small X-Band Oscillator Antennas; Free-Space Optical Interconnect Employing VCSEL Diodes; Discrete Fourier Transform Analysis in a Complex Vector Space; Miniature Scroll Pumps Fabricated by LIGA; Self-Assembling, Flexible, Pre-Ceramic Composite Preforms; Flight-speed Integral Image Analysis Toolkit; Work Coordination Engine; Multi-Mission Automated Task Invocation Subsystem; Autonomously Calibrating a Quadrupole Mass Spectrometer; Determining Spacecraft Reaction Wheel Friction Parameters; Composite Silica Aerogels Opacified with Titania; Multiplexed Colorimetric Solid-Phase Extraction; Detecting Airborne Mercury by Use of Polymer/Carbon Films; Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate; Pressure-Energized Seal Rings to Better Withstand Flows; Rollerjaw Rock Crusher; Microwave Sterilization and Depyrogenation System; Quantifying Therapeutic and Diagnostic Efficacy in 2D Microvascular Images; NiF2/NaF:CaF2/Ca Solid-State High-Temperature Battery Cells; Critical Coupling Between Optical Fibers and WGM Resonators; Microwave Temperature Profiler Mounted in a Standard Airborne Research Canister; Alternative Determination of Density of the Titan Atmosphere; Solar Rejection Filter for Large Telescopes; Automated CFD for Generation of Airfoil Performance Tables; Progressive Classification Using Support Vector Machines; Active Learning with Irrelevant Examples; A Data Matrix Method for Improving the Quantification of Element Percentages of SEM/EDX Analysis; Deployable Shroud for the International X-Ray Observatory; Improved Model of a Mercury Ring Damper; Optoelectronic pH Meter: Further Details; X-38 Advanced Sublimator; and Solar Simulator Represents the Mars Surface Solar Environment.

Controlled formation of GeSi nanostructures on pillar-patterned Si substrate

NASA Astrophysics Data System (ADS)

Zhou, Tong; Zeng, Ceng; Fan, Yongliang; Jiang, Zuimin; Xia, Jinsong; Zhong, Zhenyang; Fudan University Team; Huazhong University of Science; Technology Collaboration

2015-03-01

GeSi quantum nanostructures (QNs) have potential applications in optoelectronic devices due to their unique properties and compatibility with the sophisticated Si technology. However, the disadvantages of poor quantum efficiency of the GeSi QNs on flat Si (001) substrates hinder their optoelectronic applications. Today, numerous growth strategies have been proposed to control the formation of GeSi QNs in hope of improving the optoelectronic performances. One of the ways is to fabricate GeSi QNs on patterned substrates, where the GeSi QNs can be greatly manipulated in aspects of size, shape, composition, orientation and arrangement. Here, self-assembled GeSi QNs on periodic Si (001) sub-micro pillars (SPMs) are systematically studied. By controlling the growth conditions and the diameters of the SPMs, different GeSi QNs, including circularly arranged quantum dots (QDs), quantum rings (QRs), and quantum dot molecules (QDMs), are realized at the top edge of SMPs. Meanwhile, fourfold symmetric GeSi QDMs can be also obtained at the base edges of the SPMs. The promising features of self-assembled GeSi QNs are explained in terms of the surface chemical potential, which disclose the critical effect of surface morphology on the diffusion and the aggregation of Ge adatoms.

Multifunctional Silicon Optoelectronics Integrated with Plasmonic Scattering Color.

PubMed

Wen, Long; Chen, Qin; Hu, Xin; Wang, Huacun; Jin, Lin; Su, Qiang

2016-12-27

Plasmonic scattering from metallic nanoparticles has been used for centuries to create the colorful appearance of stained glass. Besides their use as passive spectral filtering components, multifunctional optoelectronic applications can be achieved by integrating the nanoscatters with semiconductors that generate electricity using the complementary spectral components of plasmonic colors. To suppress the usual degradation of both efficiency and the gamut of plasmonic scattering coloration in highly asymmetric index configurations like a silicon host, aluminum nanodisks on indium tin oxide (ITO) coated silicon were experimentally studied and demonstrated color sorting in the full visible range along with photocurrent generation. Interestingly, the photocurrents were found to be comparable to the reference devices with only antireflection coatings in spite of the power loss for coloration. Detailed investigation shows that ITO serves as both the impedance matching layer for promoting the backward scattering and schottky contact with silicon, and moreover, plasmonic nanoscatters efficiently harvest the complement spectrum components for charge generation. The present approach combines the capacities of nanoscale color sorting and photoelectric converting at a negligible cost of efficiency, thus providing a broad flexibility of being utilized in various optoelectronic applications including self-powered display, filter-free imaging, and colorful photovoltaics.

Protecting the properties of monolayer MoS 2 on silicon based substrates with an atomically thin buffer

DOE PAGES

Man, Michael K. L.; Deckoff-Jones, Skylar; Winchester, Andrew; ...

2016-02-12

Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS 2), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects themore » range of key opto-electronic, structural, and morphological properties of monolayer MoS 2 on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO 2 substrates. Lastly, our demonstration provides a way of integrating MoS 2 and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations.« less

Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities

DOE PAGES

Xia, Zhenyang; Song, Haomin; Kim, Munho; ...

2017-07-07

Miniaturization of optoelectronic devices offers tremendous performance gain. As the volume of photoactive material decreases, optoelectronic performance improves, including the operation speed, the signal-to-noise ratio, and the internal quantum efficiency. Over the past decades, researchers have managed to reduce the volume of photoactive materials in solar cells and photodetectors by orders of magnitude. However, two issues arise when one continues to thin down the photoactive layers to the nanometer scale (for example, <50 nm). First, light-matter interaction becomes weak, resulting in incomplete photon absorption and low quantum efficiency. Second, it is difficult to obtain ultrathin materials with single-crystalline quality. Wemore » introduce a method to overcome these two challenges simultaneously. It uses conventional bulk semiconductor wafers, such as Si, Ge, and GaAs, to realize single-crystalline films on foreign substrates that are designed for enhanced light-matter interaction. We use a high-yield and high-throughput method to demonstrate nanometer-thin photodetectors with significantly enhanced light absorption based on nanocavity interference mechanism. As a result, these single-crystalline nanomembrane photodetectors also exhibit unique optoelectronic properties, such as the strong field effect and spectral selectivity.« less

Training Medical Novices in Spinal Microsurgery: Does the Modality Matter? A Pilot Study Comparing Traditional Microscopic Surgery and a Novel Robotic Optoelectronic Visualization Tool

PubMed Central

Tubbs, R. Shane; Page, Jeni; Chapman, Alexandra; Burgess, Brittni; Laws, Tyler; Warren, Haylie; Oskouian, Rod J

2016-01-01

The operative microscope has been a staple instrument in the neurosurgical operating room over the last 50 years. With advances in optoelectronics, options such as robotically controlled high magnification have become available. Such robotically controlled optoelectronic systems may offer new opportunities in surgical technique and teaching. However, traditionally trained surgeons may find it hard to accept newer technologies due to an inherent bias emerging from their previous background. We, therefore, studied how a medically naïve population in a pilot study would meet set microsurgical goals in a cadaver experiment using either a conventional operative microscope or BrightMatter™ Servo system, ​a robotically controlled optoelectronic system (Synaptive Medical, Toronto, Ontario, Canada). We found that the relative ease in teaching medical novices with a robotically controlled optoelectronic system was more valuable when compared to using a modern-day surgical microscope. PMID:26973804

Optoelectronic Technology Consortium: Precompetitive Consortium for Optoelectronic Interconnect Technology

DTIC Science & Technology

1992-09-01

demonstrating the producibility of optoelectronic components for high-density/high-data-rate processors and accelerating the insertion of this technology...technology development stage, OETC will advance the development of optical components, produce links for a multiboard processor testbed demonstration, and...components that are affordable, initially at <$100 per line, and reliable, with a li~e BER᝺-15 and MTTF >10 6 hours. Under the OETC program, Honeywell will

Transparent heat-spreader for optoelectronic applications

DOEpatents

Minano, Juan Carlos; Benitez, Pablo

2014-11-04

An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

DARPA Perspectives on Multifunctional Materials/Power and Energy

DTIC Science & Technology

2012-08-09

In-situ growth of aligned CNTs Electronics Graphene /Metal oxide CMOS interconnects Erosion Diamond/ZnS LWIR missile domes Tribology TiN/Carbon...application Optoelectronics InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel...InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel Tribology TiN/High speed

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

DOE PAGES

Wang, Hsin -Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; ...

2016-06-08

The thin-film vapor–liquid–solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy was used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces themore » relative intragap defect density by 1 order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (V OC) of individual TF-VLS InP solar cells by up to 130 mV and reduced the variance in V OC for the analyzed devices.« less

A Demo opto-electronic power source based on single-walled carbon nanotube sheets.

PubMed

Hu, Chunhua; Liu, Changhong; Chen, Luzhuo; Meng, Chuizhou; Fan, Shoushan

2010-08-24

It is known that single-walled carbon nanotubes (SWNTs) strongly absorb light, especially in the near-infrared (NIR) region, and convert it into heat. In fact, SWNTs also have considerable ability to convert heat into electricity. In this work, we show that SWNT sheets made from as-grown SWNT arrays display a large positive thermoelectric coefficient (p-type). We designed a simple SWNT device to convert illuminating NIR light directly into a notable voltage output, which was verified by experimental tests. Furthermore, by a simple functionalization step, the p- to n-type transition was conveniently achieved for the SWNT sheets. By integrating p- and n-type elements in series, we constructed a novel NIR opto-electronic power source, which outputs a large voltage that sums over the output of every single element. Additionally, the output of the demo device has shown a good linear relationship with NIR light power density, favorable for IR sensors.

Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics.

PubMed

Wu, Wenzhuo; Wang, Lei; Yu, Ruomeng; Liu, Yuanyue; Wei, Su-Huai; Hone, James; Wang, Zhong Lin

2016-10-01

Strain-gated flexible optoelectronics are reported based on monolayer MoS 2 . Utilizing the piezoelectric polarization created at the metal-MoS 2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, C. Y., E-mail: cychang@gatech.edu; UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine, 2 Rue Marconi, F-57070 Metz; Choi, Daeyoung

2016-05-09

A multi-GHz chaotic optoelectronic oscillator based on an external cavity semiconductor laser (ECL) is demonstrated. Unlike the standard optoelectronic oscillators for microwave applications, we do not employ the dynamic light output incident on a photodiode to generate the microwave signal, but instead generate the microwave signal directly by measuring the terminal voltage V(t) of the laser diode of the ECL under constant-current operation, thus obviating the photodiode entirely.

Permanent magnet synchronous motor servo system control based on μC/OS

NASA Astrophysics Data System (ADS)

Shi, Chongyang; Chen, Kele; Chen, Xinglong

2015-10-01

When Opto-Electronic Tracking system operates in complex environments, every subsystem must operate efficiently and stably. As a important part of Opto-Electronic Tracking system, the performance of PMSM(Permanent Magnet Synchronous Motor) servo system affects the Opto-Electronic Tracking system's accuracy and speed greatly[1][2]. This paper applied embedded real-time operating system μC/OS to the control of PMSM servo system, implemented SVPWM(Space Vector Pulse Width Modulation) algorithm in PMSM servo system, optimized the stability of PMSM servo system. Pointing on the characteristics of the Opto-Electronic Tracking system, this paper expanded μC/OS with software redundancy processes, remote debugging and upgrading. As a result, the Opto- Electronic Tracking system performs efficiently and stably.

Robust broad spectral photodetection (UV-NIR) and ultra high responsivity investigated in nanosheets and nanowires of Bi2Te3 under harsh nano-milling conditions.

PubMed

Sharma, Alka; Srivastava, A K; Senguttuvan, T D; Husale, Sudhir

2017-12-20

Due to miniaturization of device dimensions, the next generation's photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic properties of nanodevices fabricated from new novel materials and testing their performances at harsh conditions. The recent advances on 2D layered materials indicate exciting progress on broad spectral photodetection (BSP) but still there is a great demand for fabricating ultra-high performance photodetectors made from single material sensing broad electromagnetic spectrum since the detection range 325 nm-1550 nm is not covered by the conventional Si or InGaAs photodetectors. Alternatively, Bi 2 Te 3 is a layered material, possesses exciting optoelectronic, thermoelectric, plasmonics properties. Here we report robust photoconductivity measurements on Bi 2 Te 3 nanosheets and nanowires demonstrating BSP from UV to NIR. The nanosheets of Bi 2 Te 3 show the best ultra-high photoresponsivity (~74 A/W at 1550 nm). Further these nanosheets when transform into nanowires using harsh FIB milling conditions exhibit about one order enhancement in the photoresponsivity without affecting the performance of the device even after 4 months of storage at ambient conditions. An ultra-high photoresponsivity and BSP indicate exciting robust nature of topological insulator based nanodevices for optoelectronic applications.

Measure of horizontal and vertical displacement of the acromioclavicular joint after cutting ligament using X-ray and opto-electronic system.

PubMed

Rochcongar, Goulven; Emily, Sébastien; Lebel, Benoit; Pineau, Vincent; Burdin, Gilles; Hulet, Christophe

2012-09-01

Surgical versus orthopedic treatments of acromioclavicular disjunction are still debated. The aim of this study was to measure horizontal and vertical acromion's displacement after cutting the ligament using standard X-ray and an opto-electronic system on cadaver. Ten cadaveric shoulders were studied. A sequential ligament's section was operated by arthroscopy. The sequence of cutting was chosen to fit with Rockwood's grade. The displacement of the acromion was measured on standard X-ray and with an opto-electronic system allowing measuring of the horizontal displacement. Statistical comparisons were performed using a paired Student's t test with significance set at p < 0.05. Cutting the coracoclavicular ligament and delto-trapezius muscles cause a statistical downer displacement of the acromion, but not after sectioning the acromioclavicular ligament. The contact surface between the acromion and the clavicle decreases statistically after sectioning the acromioclavicular ligament and the coracoclavicular ligament with no effect of sectioning the delto-trapezius muscles. Those results are superposing with those dealing with the anterior translation. The measure concerning the acromioclavicular distance and the coracoclavicular distance are superposing with those of Rockwood. However, there is a significant horizontal translation after cutting the acromioclavicular ligament. Taking into account this displacement, it may be interesting to choose either surgical or orthopedic treatment. There is a correlation between anatomical damage and importance of instability. Horizontal instability is misevaluated in clinical practice.

Opto-electronic microwave oscillator

NASA Astrophysics Data System (ADS)

Yao, X. Steve; Maleki, Lute

1996-12-01

Photonic applications are important in RF communication systems to enhance many functions including remote transfer of antenna signals, carrier frequency up or down conversion, antenna beam steering, and signal filtering. Many of these functions require reference frequency oscillators. However, traditional microwave oscillators cannot meet all the requirements of photonic communication systems that need high frequency and low phase noise signal generation. Because photonic systems involve signals in both optical and electrical domains, an ideal signal source should be able to provide electrical and optical signals. In addition, it should be possible to synchronize or control the signal source by both electrical and optical means. We present such a source1-2 that converts continuous light energy into stable and spectrally pure microwave signals. This Opto-Electronic Oscillator, OEO, consists of a pump laser and a feedback circuit including an intensity modulator, an optical fiber delay line, a photodetector, an amplifier, and a filter, as shown in Figure 1a. Its oscillation frequency, limited only by the speed of the modulator, can be up to 75 GHz.

Transparent, Flexible Silicon Nanostructured Wire Networks with Seamless Junctions for High-Performance Photodetector Applications.

PubMed

Hossain, Mozakkar; Kumar, Gundam Sandeep; Barimar Prabhava, S N; Sheerin, Emmet D; McCloskey, David; Acharya, Somobrata; Rao, K D M; Boland, John J

2018-05-22

Optically transparent photodetectors are crucial in next-generation optoelectronic applications including smart windows and transparent image sensors. Designing photodetectors with high transparency, photoresponsivity, and robust mechanical flexibility remains a significant challenge, as is managing the inevitable trade-off between high transparency and strong photoresponse. Here we report a scalable method to produce flexible crystalline Si nanostructured wire (NW) networks fabricated from silicon-on-insulator (SOI) with seamless junctions and highly responsive porous Si segments that combine to deliver exceptional performance. These networks show high transparency (∼92% at 550 nm), broadband photodetection (350 to 950 nm) with excellent responsivity (25 A/W), optical response time (0.58 ms), and mechanical flexibility (1000 cycles). Temperature-dependent photocurrent measurements indicate the presence of localized electronic states in the porous Si segments, which play a crucial role in light harvesting and photocarrier generation. The scalable low-cost approach based on SOI has the potential to deliver new classes of flexible optoelectronic devices, including next-generation photodetectors and solar cells.

Reliability and limits of agreement of circumferential, water displacement, and optoelectronic volumetry in the measurement of upper limb lymphedema.

PubMed

Deltombe, T; Jamart, J; Recloux, S; Legrand, C; Vandenbroeck, N; Theys, S; Hanson, P

2007-03-01

We conducted a reliability comparison study to determine the intrarater and inter-rater reliability and the limits of agreement of the volume estimated by circumferential measurements using the frustum sign method and the disk model method, by water displacement volumetry, and by infrared optoelectronic volumetry in the assessment of upper limb lymphedema. Thirty women with lymphedema following axillary lymph node dissection surgery for breast cancer surgery were enrolled. In each patient, the volumes of the upper limbs were estimated by three physical therapists using circumference measurements, water displacement and optoelectronic volumetry. One of the physical therapists performed each measure twice. Intraclass correlation coefficients (ICCs), relative differences, and limits of agreement were determined. Intrarater and interrater reliability ICCs ranged from 0.94 to 1. Intrarater relative differences were 1.9% for the disk model method, 3.2% for the frustum sign model method, 2.9% for water displacement volumetry, and 1.5% for optoelectronic volumetry. Intrarater reliability was always better than interrater, except for the optoelectronic method. Intrarater and interrater limits of agreement were calculated for each technique. The disk model method and optoelectronic volumetry had better reliability than the frustum sign method and water displacement volumetry, which is usually considered to be the gold standard. In terms of low-cost, simplicity, and reliability, we recommend the disk model method as the method of choice in clinical practice. Since intrarater reliability was always better than interrater reliability (except for optoelectronic volumetry), patients should therefore, ideally, always be evaluated by the same therapist. Additionally, the limits of agreement must be taken into account when determining the response of a patient to treatment.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr04688a

Comprehensive study of the influence of different environments on degradation processes in F8BT: Correlating optoelectronic properties with Raman measurements

NASA Astrophysics Data System (ADS)

Linde, Sivan; Shikler, Rafi

2013-10-01

There is a growing interest in conjugated polymers from both industrial and academic points of views. The reasons are their tunable optoelectronic properties, ease of production, and excellent mechanical properties. However, the ease with which their optoelectronic properties are tunable make devices based on them prone to fast degradation and therefore, short life time. The issue of degradation of organic based optoelectronic devices is the topic of many ongoing researches. However, much less attention is given to degradation processes of the individual components of the devices and their dependence on the environmental conditions. In this work, we report on the degradation of a film of a polyfluorene block copolymer F8BT that is used in a variety of optoelectronic devices under different environments: Sun exposure, heating, and UV exposure in inert and ambient conditions. Degradation was observed in most of the optoelectronic properties of the film. Topographic measurements did not show observable changes of the film morphology following degradation. However, Raman spectroscopy measurements show changes that indicate degradation in one of the building blocks of the copolymer that is associated with electron's conduction. The absolute value of the correlation coefficient between the decrease in the Raman signal and the decrease in the optoelectronic properties is larger than 0.95 under sun exposure it is larger than 0.8 under all other ambient exposures and smaller than 0.65 under inert conditions. These results support the assumption that Oxygen, not necessarily through photo-oxidation, and also water play an important role in the degradation process and indicate the part of the polymer that is most susceptible to degradation.

Optoelectronic instrumentation enhancement using data mining feedback for a 3D measurement system

NASA Astrophysics Data System (ADS)

Flores-Fuentes, Wendy; Sergiyenko, Oleg; Gonzalez-Navarro, Félix F.; Rivas-López, Moisés; Hernandez-Balbuena, Daniel; Rodríguez-Quiñonez, Julio C.; Tyrsa, Vera; Lindner, Lars

2016-12-01

3D measurement by a cyber-physical system based on optoelectronic scanning instrumentation has been enhanced by outliers and regression data mining feedback. The prototype has applications in (1) industrial manufacturing systems that include: robotic machinery, embedded vision, and motion control, (2) health care systems for measurement scanning, and (3) infrastructure by providing structural health monitoring. This paper presents new research performed in data processing of a 3D measurement vision sensing database. Outliers from multivariate data have been detected and removal to improve artificial intelligence regression algorithm results. Physical measurement error regression data has been used for 3D measurements error correction. Concluding, that the joint of physical phenomena, measurement and computation is an effectiveness action for feedback loops in the control of industrial, medical and civil tasks.

Opto-electronic characterization of third-generation solar cells

PubMed Central

Jenatsch, Sandra

2018-01-01

Abstract We present an overview of opto-electronic characterization techniques for solar cells including light-induced charge extraction by linearly increasing voltage, impedance spectroscopy, transient photovoltage, charge extraction and more. Guidelines for the interpretation of experimental results are derived based on charge drift-diffusion simulations of solar cells with common performance limitations. It is investigated how nonidealities like charge injection barriers, traps and low mobilities among others manifest themselves in each of the studied cell characterization techniques. Moreover, comprehensive parameter extraction for an organic bulk-heterojunction solar cell comprising PCDTBT:PC70BM is demonstrated. The simulations reproduce measured results of 9 different experimental techniques. Parameter correlation is minimized due to the combination of various techniques. Thereby a route to comprehensive and accurate parameter extraction is identified. PMID:29707069

Metasurfaces Based on Phase-Change Material as a Reconfigurable Platform for Multifunctional Devices

PubMed Central

Raeis-Hosseini, Niloufar; Rho, Junsuk

2017-01-01

Integration of phase-change materials (PCMs) into electrical/optical circuits has initiated extensive innovation for applications of metamaterials (MMs) including rewritable optical data storage, metasurfaces, and optoelectronic devices. PCMs have been studied deeply due to their reversible phase transition, high endurance, switching speed, and data retention. Germanium-antimony-tellurium (GST) is a PCM that has amorphous and crystalline phases with distinct properties, is bistable and nonvolatile, and undergoes a reliable and reproducible phase transition in response to an optical or electrical stimulus; GST may therefore have applications in tunable photonic devices and optoelectronic circuits. In this progress article, we outline recent studies of GST and discuss its advantages and possible applications in reconfigurable metadevices. We also discuss outlooks for integration of GST in active nanophotonic metadevices. PMID:28878196

German-Chinese cooperative Bachelor in engineering physics/optoelectronics

NASA Astrophysics Data System (ADS)

Wick, Michael; Lindner, Gerhard; Zimmer, Katja; Zheng, Jihong; Xu, Boqing; Wang, Ning; Schreiner, Rupert; Fuhrmann, Thomas; Seebauer, Gudrun

2017-08-01

The University of Shanghai for Science and Technology (USST), the Coburg University of Applied Sciences and Arts (CUASA) and the OTH Regensburg, University of Applied Sciences (OTHR) established an English taught international cooperative bachelor program in the area of Engineering Physics/Optoelectronics. Students from China study their first four semesters at USST. They continue their studies in Germany for the last three semesters, including an internship and a bachelor thesis, graduating with a Chinese and a German bachelor degree. Students from Germany study their third and fourth semester at USST to gain international experience. While the first cohort of Chinese students is currently in Germany, the second cohort of German students is in Shanghai. Up to now the feedback regarding this study program is completely positive, thus it is planned to develop it further.

Coupled opto-electronic oscillator

NASA Technical Reports Server (NTRS)

Yao, X. Steve (Inventor); Maleki, Lute (Inventor)

1999-01-01

A coupled opto-electronic oscillator that directly couples a laser oscillation with an electronic oscillation to simultaneously achieve a stable RF oscillation at a high frequency and ultra-short optical pulsation by mode locking with a high repetition rate and stability. Single-mode selection can be achieved even with a very long opto-electronic loop. A multimode laser can be used to pump the electronic oscillation, resulting in a high operation efficiency. The optical and the RF oscillations are correlated to each other.

Ultraviolet Source For Testing Hydrogen-Fire Detectors

NASA Technical Reports Server (NTRS)

Hall, Gregory A.; Larson, William E.; Youngquist, Robert C.; Moerk, John S.; Haskell, William D.; Cox, Robert B.; Polk, Jimmy D.; Stout, Stephen J.; Strobel, James P.

1995-01-01

Hand-held portable unit emits ultraviolet light similar to that emitted by hydrogen burning in air. Developed for use in testing optoelectronic hydrogen-fire detectors, which respond to ultraviolet light at wavelengths from 180 to 240 nanometers. Wavelength range unique in that within it, hydrogen fires emit small but detectable amounts of radiation, light from incandescent lamps and Sun almost completely absent, and air sufficiently transmissive to enable detection of hydrogen fire from distance. Consequently, this spectral region favorable for detecting hydrogen fires while minimizing false alarms.

Effectively Transparent Front Contacts for Optoelectronic Devices

DOE PAGES

Saive, Rebecca; Borsuk, Aleca M.; Emmer, Hal S.; ...

2016-06-10

Effectively transparent front contacts for optoelectronic devices achieve a measured transparency of up to 99.9% and a measured sheet resistance of 4.8 Ω sq-1. These 3D microscale triangular cross-section grid fingers redirect incoming photons efficiently to the active semiconductor area and can replace standard grid fingers as well as transparent conductive oxide layers in optoelectronic devices. Optoelectronic devices such as light emitting diodes, photodiodes, and solar cells play an important and expanding role in modern technology. Photovoltaics is one of the largest optoelectronic industry sectors and an ever-increasing component of the world's rapidly growing renewable carbon-free electricity generation infrastructure. Inmore » recent years, the photovoltaics field has dramatically expanded owing to the large-scale manufacture of inexpensive crystalline Si and thin film cells and modules. The current record efficiency (η = 25.6%) Si solar cell utilizes a heterostructure intrinsic thin layer (HIT) design[1] to enable increased open circuit voltage, while more mass-manufacturable solar cell architectures feature front contacts.[2, 3] Thus improved solar cell front contact designs are important for future large-scale photovoltaics with even higher efficiency.« less

Optoelectronics technologies for Virtual Reality systems

NASA Astrophysics Data System (ADS)

Piszczek, Marek; Maciejewski, Marcin; Pomianek, Mateusz; Szustakowski, Mieczysław

2017-08-01

Solutions in the field of virtual reality are very strongly associated with optoelectronic technologies. This applies to both process design and operation of VR applications. Technologies such as 360 cameras and 3D scanners significantly improve the design work. What is more, HMD displays with high field of view or optoelectronic Motion Capture systems and 3D cameras guarantee an extraordinary experience in immersive VR applications. This article reviews selected technologies from the perspective of their use in a broadly defined process of creating and implementing solutions for virtual reality. There is also the ability to create, modify and adapt new approaches that show team own work (SteamVR tracker). Most of the introduced examples are effectively used by authors to create different VR applications. The use of optoelectronic technology in virtual reality is presented in terms of design and operation of the system as well as referring to specific applications. Designers and users of VR systems should take a close look on new optoelectronics solutions, as they can significantly contribute to increased work efficiency and offer completely new opportunities for virtual world reception.

Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide

DOE PAGES

Bao, Wei; Borys, Nicholas J.; Ko, Changhyun; ...

2015-08-13

The ideal building blocks for atomically thin, flexible optoelectronic and catalytic devices are two-dimensional monolayer transition metal dichalcogenide semiconductors. Although challenging for two-dimensional systems, sub-diffraction optical microscopy provides a nanoscale material understanding that is vital for optimizing their optoelectronic properties. We use the ‘Campanile’ nano-optical probe to spectroscopically image exciton recombination within monolayer MoS2 with sub-wavelength resolution (60 nm), at the length scale relevant to many critical optoelectronic processes. Moreover, synthetic monolayer MoS2 is found to be composed of two distinct optoelectronic regions: an interior, locally ordered but mesoscopically heterogeneous two-dimensional quantum well and an unexpected ~300-nm wide, energetically disorderedmore » edge region. Further, grain boundaries are imaged with sufficient resolution to quantify local exciton-quenching phenomena, and complimentary nano-Auger microscopy reveals that the optically defective grain boundary and edge regions are sulfur deficient. In conclusion, the nanoscale structure–property relationships established here are critical for the interpretation of edge- and boundary-related phenomena and the development of next-generation two-dimensional optoelectronic devices.« less

Phase noise analysis of a 10-GHz optical injection-locked vertical-cavity surface-emitting laser-based optoelectronic oscillator

NASA Astrophysics Data System (ADS)

Coronel, Juan; Varón, Margarita; Rissons, Angélique

2016-09-01

The optical injection locking (OIL) technique is proposed to reduce the phase noise of a carrier generated for a vertical-cavity surface-emitting laser (VCSEL)-based optoelectronic oscillator. The OIL technique permits the enhancement of the VCSEL direct modulation bandwidth as well as the stabilization of the optical noise of the laser. A 2-km delay line, 10-GHz optical injection-locked VCSEL-based optoelectronic oscillator (OILVBO) was implemented. The internal noise sources of the optoelectronic oscillator components were characterized and analyzed to understand the noise conversion of the system into phase noise in the oscillator carrier. The implemented OILVBO phase noise was -105.7 dBc/Hz at 10 kHz from the carrier; this value agrees well with the performed simulated analysis. From the computed and measured phase noise curves, it is possible to infer the noise processes that take place inside the OILVBO. As a second measurement of the oscillation quality, a time-domain analysis was done through the Allan's standard deviation measurement, reported for first time for an optoelectronic oscillator using the OIL technique.

Standard cell-based implementation of a digital optoelectronic neural-network hardware.

PubMed

Maier, K D; Beckstein, C; Blickhan, R; Erhard, W

2001-03-10

A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.

1.31-1.55-µm Hybrid integrated optoelectronic receiver using low-loss quasi-monolithic integration technology

NASA Astrophysics Data System (ADS)

Luo, Yang; Huang, Yongqing; Ren, Xiaomin; Duan, Xiaofeng; Wang, Qi

2014-01-01

In order to integrate photonic devices with electronic devices to realize the low-loss hybrid integrated devices. A wide spectral hybrid integrated optoelectronic receiver was fabricated by using quasi-monolithic integration technology (QMIT) in this paper. It consisted of a 8.5 GHz InGaAs photodetector and a 1.25 Gbps mature transimpedance pre-amplifier (TIA) complementrary metal oxide semiconductor (CMOS) chip. The Au layer was deposited on a designed Si platform to form planar waveguide electrode which replaced a part of bonding wire, so it reduced the parasitic parameters of the optoelectronic receiver, and then enhanced high-speed response characteristics and the stability of the hybrid integrated receiver. Finally, a 3 Gbps clear open eye diagram of the hybrid integrated optoelectronic receiver was obtained.

Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric

2010-09-21

Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shieldingmore » is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated its extreme radiation hardness using a 65 MeV proton beam line. The solar-blind AlGaN photodiodes retained ~50% responsivity up to 3x1012 protons/cm2 fluence. The Stanford-NSTec-SETI team will continue to develop radiation hard optoelectronic devices for applications under extreme conditions.« less

A Fibre-Optic Communications Network for Teaching Clinical Medicine.

ERIC Educational Resources Information Center

Williams, Robin

1985-01-01

Describes an interactive television system based on fiber-optic communications technology which is used to facilitate participation by University of London medical students in lecture/tutorials by teachers in different hospital locations. Highlights include advantages of fiber-optics, cable manufacture and installation, opto-electronic interface,…

3-DIMENSIONAL Optoelectronic

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Ashok Venketaraman

This thesis covers the design, analysis, optimization, and implementation of optoelectronic (N,M,F) networks. (N,M,F) networks are generic space-division networks that are well suited to implementation using optoelectronic integrated circuits and free-space optical interconnects. An (N,M,F) networks consists of N input channels each having a fanout F_{rm o}, M output channels each having a fanin F_{rm i}, and Log_{rm K}(N/F) stages of K x K switches. The functionality of the fanout, switching, and fanin stages depends on the specific application. Three applications of optoelectronic (N,M,F) networks are considered. The first is an optoelectronic (N,1,1) content -addressable memory system that achieves associative recall on two-dimensional images retrieved from a parallel-access optical memory. The design and simulation of the associative memory are discussed, and an experimental emulation of a prototype system using images from a parallel-readout optical disk is presented. The system design provides superior performance to existing electronic content-addressable memory chips in terms of capacity and search rate, and uses readily available optical disk and VLSI technologies. Next, a scalable optoelectronic (N,M,F) neural network that uses free-space holographic optical interconnects is presented. The neural architecture minimizes the number of optical transmitters needed, and provides accurate electronic fanin with low signal skew, and dendritic-type fan-in processing capability in a compact layout. Optimal data-encoding methods and circuit techniques are discussed. The implementation of an prototype optoelectronic neural system, and its application to a simple recognition task is demonstrated. Finally, the design, analysis, and optimization of a (N,N,F) self-routing, packet-switched multistage interconnection network is described. The network is suitable for parallel computing and broadband switching applications. The tradeoff between optical and electronic interconnects is examined quantitatively by varying the electronic switch size K. The performance of the (N,N,F) network versus the fanning parameter F, is also analyzed. It is shown that the optoelectronic (N,N,F) networks provide a range of performance-cost alternatives, and offer superior performance-per-cost to fully electronic switching networks and to previous networks designs.

Optoelectronic Materials Center: A Collaborative Program Including University of New Mexico, Stanford University, and California Institute of Technology

DTIC Science & Technology

1992-05-15

3 0 7 7 1 I I II \\UUII l I i I i I m e i - - . .............. REPORT DOCUIENTATION PAGE Form Approved P u b i c e p o mr t n l o u r d l n f o r t h...reI-rding ts bU rd , eat (hr ng existinr g data e s.toSt = n an~nn h 0~ e .,ad•t tn id •, m h Ol=(o ) ’Ind r l~on d dco(f|etK,, Or egternlicn inldtn...grown. Device fabrication and testing are in progress. (Cheng) -•. A •: r : aa Die- t . . 1- -- •mmmmm m m mm m mmi I High-power Picosecond Pulse

Optoelectronic pH Meter: Further Details

NASA Technical Reports Server (NTRS)

Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.

2009-01-01

A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

Phase Transition Control for High Performance Ruddlesden-Popper Perovskite Solar Cells.

PubMed

Zhang, Xu; Munir, Rahim; Xu, Zhuo; Liu, Yucheng; Tsai, Hsinhan; Nie, Wanyi; Li, Jianbo; Niu, Tianqi; Smilgies, Detlef-M; Kanatzidis, Mercouri G; Mohite, Aditya D; Zhao, Kui; Amassian, Aram; Liu, Shengzhong Frank

2018-05-01

Ruddlesden-Popper reduced-dimensional hybrid perovskite (RDP) semiconductors have attracted significant attention recently due to their promising stability and excellent optoelectronic properties. Here, the RDP crystallization mechanism in real time from liquid precursors to the solid film is investigated, and how the phase transition kinetics influences phase purity, quantum well orientation, and photovoltaic performance is revealed. An important template-induced nucleation and growth of the desired (BA) 2 (MA) 3 Pb 4 I 13 phase, which is achieved only via direct crystallization without formation of intermediate phases, is observed. As such, the thermodynamically preferred perpendicular crystal orientation and high phase purity are obtained. At low temperature, the formation of intermediate phases, including PbI 2 crystals and solvate complexes, slows down intercalation of ions and increases nucleation barrier, leading to formation of multiple RDP phases and orientation randomness. These insights enable to obtain high quality (BA) 2 (MA) 3 Pb 4 I 13 films with preferentially perpendicular quantum well orientation, high phase purity, smooth film surface, and improved optoelectronic properties. The resulting devices exhibit high power conversion efficiency of 12.17%. This work should help guide the perovskite community to better control Ruddlesden-Popper perovskite structure and further improve optoelectronic and solar cell devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.

PubMed

Wang, Feng; Wang, Zhenxing; Jiang, Chao; Yin, Lei; Cheng, Ruiqing; Zhan, Xueying; Xu, Kai; Wang, Fengmei; Zhang, Yu; He, Jun

2017-09-01

2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors, holding many novel properties, such as the absence of surface dangling bonds, sizable band gaps, high flexibility, and ability of artificial assembly. With the prospect of bringing revolutionary opportunities for electronic and optoelectronic applications, 2DLSMs have prospered over the past twelve years. From materials preparation and property exploration to device applications, 2DLSMs have been extensively investigated and have achieved great progress. However, there are still great challenges for high-performance devices. In this review, we provide a brief overview on the recent breakthroughs in device optimization based on 2DLSMs, particularly focussing on three aspects: device configurations, basic properties of channel materials, and heterostructures. The effects from device configurations, i.e., electrical contacts, dielectric layers, channel length, and substrates, are discussed. After that, the affect of the basic properties of 2DLSMs on device performance is summarized, including crystal defects, crystal symmetry, doping, and thickness. Finally, we focus on heterostructures based on 2DLSMs. Through this review, we try to provide a guide to improve electronic and optoelectronic devices of 2DLSMs for achieving practical device applications in the future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optoelectronic properties of single-wall carbon nanotubes.

PubMed

Nanot, Sébastien; Hároz, Erik H; Kim, Ji-Hee; Hauge, Robert H; Kono, Junichiro

2012-09-18

Single-wall carbon nanotubes (SWCNTs), with their uniquely simple crystal structures and chirality-dependent electronic and vibrational states, provide an ideal laboratory for the exploration of novel 1D physics, as well as quantum engineered architectures for applications in optoelectronics. This article provides an overview of recent progress in optical studies of SWCNTs. In particular, recent progress in post-growth separation methods allows different species of SWCNTs to be sorted out in bulk quantities according to their diameters, chiralities, and electronic types, enabling studies of (n,m)-dependent properties using standard macroscopic characterization measurements. Here, a review is presented of recent optical studies of samples enriched in 'armchair' (n = m) species, which are truly metallic nanotubes but show excitonic interband absorption. Furthermore, it is shown that intense ultrashort optical pulses can induce ultrafast bandgap oscillations in SWCNTs, via the generation of coherent phonons, which in turn modulate the transmission of a delayed probe pulse. Combined with pulse-shaping techniques, coherent phonon spectroscopy provides a powerful method for studying exciton-phonon coupling in SWCNTs in a chirality-selective manner. Finally, some of the basic properties of highly aligned SWCNT films are highlighted, which are particularly well-suited for optoelectronic applications including terahertz polarizers with nearly perfect extinction ratios and broadband photodetectors. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study on optoelectronic properties of Spiro-CN for developing an efficient OLED

NASA Astrophysics Data System (ADS)

Mishra, Ashok Kumar

2018-05-01

There are a class of organic molecules and polymers which exhibit semiconductor behavior because of nearly free conjugate π-electrons. Hopping of these electrons in molecules forms different excited singlet and triplet states named as excitons. Some of these organic molecules can be set to emit photons by triplet-singlet excitonic transition via a process called Thermally Activated Delayed Fluorescence (TADF) which is exploited for designing the Organic Light Emitting diode (OLED.) Spiro-CN (spirobifluorene skeletons) Spiro is one of these reported noble metal-free TADF molecules which offers unique optical and electronic properties arising from the efficient transition and reverse intersystem crossing between the lowest singlet (S) and triplet (T) excited states. Its ability to harvest triplet excitons for fluorescence through facilitated reverse intersystem crossing (T→S) could directly impact their properties and performances, which is attractive for a wide variety of low-cost optoelectronic device. In the present study, the Spiro-CN compounds have been taken up for the investigation of various optoelectronic properties including the thermally activated delayed fluorescence (TADF) by using the Koopmans Method and Density Functional Theory. The present study discusses the utility of the Spiro-CN organic semiconductor as a suitable TADF material essential for developing an efficient Organic Light Emitting Diode (OLED).

Structure and Growth Control of Organic-Inorganic Halide Perovskites for Optoelectronics: From Polycrystalline Films to Single Crystals.

PubMed

Chen, Yani; He, Minhong; Peng, Jiajun; Sun, Yong; Liang, Ziqi

2016-04-01

Recently, organic-inorganic halide perovskites have sparked tremendous research interest because of their ground-breaking photovoltaic performance. The crystallization process and crystal shape of perovskites have striking impacts on their optoelectronic properties. Polycrystalline films and single crystals are two main forms of perovskites. Currently, perovskite thin films have been under intensive investigation while studies of perovskite single crystals are just in their infancy. This review article is concentrated upon the control of perovskite structures and growth, which are intimately correlated for improvements of not only solar cells but also light-emitting diodes, lasers, and photodetectors. We begin with the survey of the film formation process of perovskites including deposition methods and morphological optimization avenues. Strategies such as the use of additives, thermal annealing, solvent annealing, atmospheric control, and solvent engineering have been successfully employed to yield high-quality perovskite films. Next, we turn to summarize the shape evolution of perovskites single crystals from three-dimensional large sized single crystals, two-dimensional nanoplates, one-dimensional nanowires, to zero-dimensional quantum dots. Siginificant functions of perovskites single crystals are highlighted, which benefit fundamental studies of intrinsic photophysics. Then, the growth mechanisms of the previously mentioned perovskite crystals are unveiled. Lastly, perspectives for structure and growth control of perovskites are outlined towards high-performance (opto)electronic devices.

Low-temperature crack-free Si3N4 nonlinear photonic circuits for CMOS-compatible optoelectronic co-integration

NASA Astrophysics Data System (ADS)

Casale, Marco; Kerdiles, Sebastien; Brianceau, Pierre; Hugues, Vincent; El Dirani, Houssein; Sciancalepore, Corrado

2017-02-01

In this communication, authors report for the first time on the fabrication and testing of Si3N4 non-linear photonic circuits for CMOS-compatible monolithic co-integration with silicon-based optoelectronics. In particular, a novel process has been developed to fabricate low-loss crack-free Si3N4 750-nm-thick films for Kerr-based nonlinear functions featuring full thermal budget compatibility with existing Silicon photonics and front-end Si optoelectronics. Briefly, differently from previous and state-of-the-art works, our nonlinear nitride-based platform has been realized without resorting to commonly-used high-temperature annealing ( 1200°C) of the film and its silica upper-cladding used to break N-H bonds otherwise causing absorption in the C-band and destroying its nonlinear functionality. Furthermore, no complex and fabrication-intolerant Damascene process - as recently reported earlier this year - aimed at controlling cracks generated in thick tensile-strained Si3N4 films has been used as well. Instead, a tailored Si3N4 multiple-step film deposition in 200-mm LPCVD-based reactor and subsequent low-temperature (400°C) PECVD oxide encapsulation have been used to fabricate the nonlinear micro-resonant circuits aiming at generating optical frequency combs via optical parametric oscillators (OPOs), thus allowing the monolithic co-integration of such nonlinear functions on existing CMOS-compatible optoelectronics, for both active and passive components such as, for instance, silicon modulators and wavelength (de-)multiplexers. Experimental evidence based on wafer-level statistics show nitride-based 112-μm-radius ring resonators using such low-temperature crack-free nitride film exhibiting quality factors exceeding Q >3 x 105, thus paving the way to low-threshold power-efficient Kerr-based comb sources and dissipative temporal solitons in the C-band featuring full thermal processing compatibility with Si photonic integrated circuits (Si-PICs).

The Optoelectronic Properties of Nanoparticles from First Principles Calculations

NASA Astrophysics Data System (ADS)

Brawand, Nicholas Peter

The tunable optoelectronic properties of nanoparticles through the modification of their size, shape, and surface chemistry, make them promising platforms for numerous applications, including electronic and solar conversion devices. However, the rational design and optimization of nanostructured materials remain open challenges, e.g. due to difficulties in controlling and reproducing synthetic processes and in precise atomic-scale characterization. Hence, the need for accurate theoretical predictions, which can complement and help interpret experiments and provide insight into the underlying physical properties of nanostructured materials. This dissertation focuses on the development and application of first principles calculations to predict the optoelectronic properties of nanoparticles. Novel methods based on density functional theory are developed, implemented, and applied to predict both optical and charge transport properties. In particular, the generalization of dielectric dependent hybrid functionals to finite systems is introduced and shown to yield highly accurate electronic structure properties of molecules and nanoparticles, including photoemission and absorption properties. In addition, an implementation of constrained density functional theory is discussed, for the calculation of hopping transport in nanoparticle systems. The implementation was verified against literature results and compared against other methods used to compute transport properties, showing that some methods used in the literature give unphysical results for thermally disordered systems. Furthermore, the constrained density functional theory implementation was coupled to the self-consistent image charge method, making it possible to include image charge effects self-consistently when predicting charge transport properties of nanoparticles near interfaces. The methods developed in this dissertation were then applied to study the optoelectronic and transport properties of specific systems, in particular, silicon and lead chalcogenide nanoparticles. In the case of Si, blinking in oxidized Si nanoparticles was addressed. Si dangling bonds at the surface were found to introduce defect states which, depending on their charge and local stress conditions, may give rise to ON and OFF states responsible for exponential blinking statistics. We also investigated, engineering of band edge positions of nanoparticles through post-synthetic surface chemistry modification, with a focus on lead chalcogenides. In collaboration with experiment, we demonstrated how band edge positions of lead sulfide nanoparticles can be tuned by over 2.0 eV. We established a clear relationship between ligand dipole moments and nanoparticle band edge shifts which can be used to engineer nanoparticles for optoelectronic applications. Calculations of transport properties focused on charge transfer in silicon and lead chalcogenide nanoparticles. Si nanoparticles with deep defects and shallow impurities were investigated, showing that shallow defects may be more detrimental to charge transport than previously assumed. In the case of lead chalcogenide nanoparticles, hydrogen was found to form complexes with defects which can be used to remove potentially detrimental charge traps in nanoparticle solids. The methods and results presented in this dissertation are expected to help guide engineering of nanoparticles for future device applications.

Microparticle Flow Sensor

NASA Technical Reports Server (NTRS)

Morrison, Dennis R.

2005-01-01

The microparticle flow sensor (MFS) is a system for identifying and counting microscopic particles entrained in a flowing liquid. The MFS includes a transparent, optoelectronically instrumented laminar-flow chamber (see figure) and a computer for processing instrument-readout data. The MFS could be used to count microparticles (including micro-organisms) in diverse applications -- for example, production of microcapsules, treatment of wastewater, pumping of industrial chemicals, and identification of ownership of liquid products.

Optoelectronic Mounting Structure

DOEpatents

Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

2004-10-05

An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

PubMed Central

Botiz, Ioan; Stingelin, Natalie

2014-01-01

It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. PMID:28788568

Chaotic dynamics and synchronization in microchip solid-state lasers with optoelectronic feedback.

PubMed

Uchida, Atsushi; Mizumura, Keisuke; Yoshimori, Shigeru

2006-12-01

We experimentally observe the dynamics of a two-mode Nd:YVO4 microchip solid-state laser with optoelectronic feedback. The total laser output is detected and fed back to the injection current of the laser diode for pumping. Chaotic oscillations are observed in the microchip laser with optoelectronic self-feedback. We also observe the dynamics of two microchip lasers coupled mutually with optoelectronic link. The output of one laser is detected by a photodiode and the electronic signal converted from the laser output is sent to the pumping of the other laser. Chaotic fluctuation of the laser output is observed when the relaxation oscillation frequency is close to each other between the two microchip lasers. Synchronization of periodic wave form is also obtained when the microchip lasers have a single-longitudinal mode.

Dynamic Photochemical and Optoelectronic Control of Photonic Fano Resonances via Monolayer MoS2 Trions.

PubMed

Zhang, Xingwang; Biekert, Nicolas; Choi, Shinhyuk; Naylor, Carl H; De-Eknamkul, Chawina; Huang, Wenzhuo; Zhang, Xiaojie; Zheng, Xiaorui; Wang, Dake; Johnson, A T Charlie; Cubukcu, Ertugrul

2018-02-14

Active tunability of photonic resonances is of great interest for various applications such as optical switching and modulation based on optoelectronic materials. Manipulation of charged excitons in atomically thin transition metal dichalcogenides (TMDCs) like monolayer MoS 2 offers an unexplored route for diverse functionalities in optoelectronic nanodevices. Here, we experimentally demonstrate the dynamic photochemical and optoelectronic control of the photonic crystal Fano resonances by optical and electrical tuning of monolayer MoS 2 refractive index via trions without any chemical treatment. The strong spatial and spectral overlap between the photonic Fano mode and the active MoS 2 monolayer enables efficient modulation of the Fano resonance. Our approach offers new directions for potential applications in the development of optical modulators based on emerging 2D direct band gap semiconductors.

Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference

DOEpatents

Georgiades, Nikos P.; Polzik, Eugene S.; Kimble, H. Jeff

1999-02-02

An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100's THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 .mu.m to 1.66 .mu.m for fiber optics can be accomplished with a nearly continuous frequency coverage.

New nanocomposite surfaces and thermal interface materials based on mesoscopic microspheres, polymers and graphene flakes

NASA Astrophysics Data System (ADS)

Dmitriev, Alex A.; Dmitriev, Alex S.; Makarov, Petr; Mikhailova, Inna

2018-04-01

In recent years, there has been a great interest in the development and creation of new functional energy mate-rials, including for improving the energy efficiency of power equipment and for effectively removing heat from energy devices, microelectronics and optoelectronics (power micro electronics, supercapacitors, cooling of processors, servers and data centers). In this paper, the technology of obtaining new nanocomposites based on mesoscopic microspheres, polymers and graphene flakes is considered. The methods of sequential production of functional materials from graphene flakes of different volumetric concentration using epoxy polymers, as well as the addition of monodisperse microspheres are described. Data are given on the measurement of the contact angle and thermal conductivity of these nanocomposites with respect to the creation of thermal interface materials for cooling devices of electronics, optoelectronics and power engineering.

Hermetic diode laser transmitter module

NASA Astrophysics Data System (ADS)

Ollila, Jyrki; Kautio, Kari; Vahakangas, Jouko; Hannula, Tapio; Kopola, Harri K.; Oikarinen, Jorma; Sivonen, Matti

1999-04-01

In very demanding optoelectronic sensor applications it is necessary to encapsulate semiconductor components hermetically in metal housings to ensure reliable operation of the sensor. In this paper we report on the development work to package a laser diode transmitter module for a time- off-light distance sensor application. The module consists of a lens, laser diode, electronic circuit and optomechanics. Specifications include high acceleration, -40....+75 degree(s)C temperature range, very low gas leakage and mass-production capability. We have applied solder glasses for sealing optical lenses and electrical leads hermetically into a metal case. The lens-metal case sealing has been made by using a special soldering glass preform preserving the optical quality of the lens. The metal housings are finally sealed in an inert atmosphere by welding. The assembly concept to retain excellent optical power and tight optical axis alignment specifications is described. The reliability of the laser modules manufactured has been extensively tested using different aging and environmental test procedures. Sealed packages achieve MIL- 883 standard requirements for gas leakage.

Opto-electronic oscillators having optical resonators

NASA Technical Reports Server (NTRS)

Yao, Xiaotian Steve (Inventor); Maleki, Lutfollah (Inventor); Ilchenko, Vladimir (Inventor)

2003-01-01

Systems and techniques of incorporating an optical resonator in an optical part of a feedback loop in opto-electronic oscillators. This optical resonator provides a sufficiently long energy storage time and hence to produce an oscillation of a narrow linewidth and low phase noise. Certain mode matching conditions are required. For example, the mode spacing of the optical resonator is equal to one mode spacing, or a multiplicity of the mode spacing, of an opto-electronic feedback loop that receives a modulated optical signal and to produce an electrical oscillating signal.

Hybrid optoelectronic neural networks using a mutually pumped phase-conjugate mirror

NASA Astrophysics Data System (ADS)

Dunning, G. J.; Owechko, Y.; Soffer, B. H.

1991-06-01

A method is described for interconnecting hybrid optoelectronic neural networks by using a mutually pumped phase conjugate mirror (MP-PCM). In this method, cross talk due to Bragg degeneracies is greatly reduced by storing each weight among many spatially and angularly multiplexed gratings. The effective weight throughput is increased by the parallel updating of weights using outer-product learning. Experiments demonstrated a high degree of interconnectivity between adjacent pixels. A diagram is presented showing the architecture for the optoelectronic neural network using an MP-PCM.

Optoelectronic Infrastructure for Radio Frequency and Optical Phased Arrays

NASA Technical Reports Server (NTRS)

Cai, Jianhong

2015-01-01

Optoelectronic integrated circuits offer radiation-hardened solutions for satellite systems in addition to improved size, weight, power, and bandwidth characteristics. ODIS, Inc., has developed optoelectronic integrated circuit technology for sensing and data transfer in phased arrays. The technology applies integrated components (lasers, amplifiers, modulators, detectors, and optical waveguide switches) to a radio frequency (RF) array with true time delay for beamsteering. Optical beamsteering is achieved by controlling the current in a two-dimensional (2D) array. In this project, ODIS integrated key components to produce common RF-optical aperture operation.

Dual-scale topology optoelectronic processor.

PubMed

Marsden, G C; Krishnamoorthy, A V; Esener, S C; Lee, S H

1991-12-15

The dual-scale topology optoelectronic processor (D-STOP) is a parallel optoelectronic architecture for matrix algebraic processing. The architecture can be used for matrix-vector multiplication and two types of vector outer product. The computations are performed electronically, which allows multiplication and summation concepts in linear algebra to be generalized to various nonlinear or symbolic operations. This generalization permits the application of D-STOP to many computational problems. The architecture uses a minimum number of optical transmitters, which thereby reduces fabrication requirements while maintaining area-efficient electronics. The necessary optical interconnections are space invariant, minimizing space-bandwidth requirements.

Optoelectronic Devices with Complex Failure Modes

NASA Technical Reports Server (NTRS)

Johnston, A.

2000-01-01

This part of the NSREC-2000 Short Course discusses radiation effects in basic photonic devices along with effects in more complex optoelectronic devices where the overall radiation response depends on several factors, with the possibility of multiple failure modes.

Opto-Electronic Oscillator and its Applications

NASA Technical Reports Server (NTRS)

Yao, X. S.; Maleki, L.

1996-01-01

We present the theoretical and experimental results of a new class of microwave oscillators called opto-electronic oscillators (OEO). We discuss techniques of achieving high stability single mode operation and demonstrate the applications of OEO in photonic communication systems.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

PubMed

Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

2014-12-21

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

Method of fabricating an optoelectronic device having a bulk heterojunction

DOEpatents

Shtein, Max [Ann Arbor, MI; Yang, Fan [Princeton, NJ; Forrest, Stephen R [Princeton, NJ

2008-10-14

A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

Demonstration of an optoelectronic interconnect architecture for a parallel modified signed-digit adder and subtracter

NASA Astrophysics Data System (ADS)

Sun, Degui; Wang, Na-Xin; He, Li-Ming; Weng, Zhao-Heng; Wang, Daheng; Chen, Ray T.

1996-06-01

A space-position-logic-encoding scheme is proposed and demonstrated. This encoding scheme not only makes the best use of the convenience of binary logic operation, but is also suitable for the trinary property of modified signed- digit (MSD) numbers. Based on the space-position-logic-encoding scheme, a fully parallel modified signed-digit adder and subtractor is built using optoelectronic switch technologies in conjunction with fiber-multistage 3D optoelectronic interconnects. Thus an effective combination of a parallel algorithm and a parallel architecture is implemented. In addition, the performance of the optoelectronic switches used in this system is experimentally studied and verified. Both the 3-bit experimental model and the experimental results of a parallel addition and a parallel subtraction are provided and discussed. Finally, the speed ratio between the MSD adder and binary adders is discussed and the advantage of the MSD in operating speed is demonstrated.

Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

NASA Astrophysics Data System (ADS)

Tripathi, Madhvendra Nath

2015-06-01

Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In32-xSnxO48+x/2; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom of conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.

IoT based Growth Monitoring System of Guava (Psidium guajava L.) Fruits

NASA Astrophysics Data System (ADS)

Slamet, W.; Irham, N. M.; Sutan, M. S. A.

2018-05-01

Growth monitoring of plant is important especially to evaluate the influence of environment or growing condition on its productivity. One way to monitor the plant growth is by measuring the radial growth (i.e., the change of circumference) of certain part of plant such as trunk, branch, and fruit. In this study we develop an internet of things (IoT) based monitoring system of radial growth of plant using a low-cost optoelectronic sensor. The system was applied to monitor radial growth of guava fruits (Psidium guajava L.). The principle of the developed sensor is based on the optoelectronic sensor which detects alternating white and black narrow bar printed on reflective tapes. Reflective tape was installed encircling the fruit. The movement of reflective tapes will follow the radial growth of the fruit so that the infrared sensor on the optoelectronic would response reflective tapes movement. This device is designed to measure object continuously and long-term monitor with minimum maintenance. The data collected by the sensors are then sent to the server and also can be monitored in real-time. Based on field test, at current stage, the developed sensor could measure the radial growth of the fruits with a maximum error 2 mm. In term of data transfer, the success rate of the developed system was 97.54%. The result indicated that the developed system can be used as an effective tool for growth monitoring of plant.

1998 IEEE Aerospace Conference. Proceedings.

NASA Astrophysics Data System (ADS)

The following topics were covered: science frontiers and aerospace; flight systems technologies; spacecraft attitude determination and control; space power systems; smart structures and dynamics; military avionics; electronic packaging; MEMS; hyperspectral remote sensing for GVP; space laser technology; pointing, control, tracking and stabilization technologies; payload support technologies; protection technologies; 21st century space mission management and design; aircraft flight testing; aerospace test and evaluation; small satellites and enabling technologies; systems design optimisation; advanced launch vehicles; GPS applications and technologies; antennas and radar; software and systems engineering; scalable systems; communications; target tracking applications; remote sensing; advanced sensors; and optoelectronics.

International Conference: Fundamentals of Laser Assisted Micro- & Nanotechnologies (FLAMN-07). Workshop: Laser Cleaning and Artworks Conservation (LCAC). St. Petersburg, Russia, 25-28 June 2007. Abstracts

DTIC Science & Technology

2007-06-28

femtosecond laser radiation Makin V.S.1, Vorobyev A.Y.2 1 Reseach Inst. for Complex Testing of Opto-Electronic Devices, Sosnovy Bor City, Leningrad...fuel in symmetrical conditions is designed to study DT-mixture compression and heating. To enhance the investigation abilities on this direction the...experimental test bench of average power ∼50 kW with supersonic flow of working medium in the resonator has been developed on its basis. FLAMN-07 3

Next Generation Highly Conducting Organic Films Using Novel Donor-Acceptor Molecules for Opto-electronic Applications

DTIC Science & Technology

2010-06-01

addition, a new class of donor molecules was invented in the course of the DRI program. 2.1 Polymer Based Donor-acceptor Material The following work by...average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data...information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information

Highly efficient flexible optoelectronic devices using metal nanowire-conducting polymer composite transparent electrode

NASA Astrophysics Data System (ADS)

Jung, Eui Dae; Nam, Yun Seok; Seo, Houn; Lee, Bo Ram; Yu, Jae Choul; Lee, Sang Yun; Kim, Ju-Young; Park, Jang-Ung; Song, Myoung Hoon

2015-09-01

Here, we report a comprehensive analysis of the electrical, optical, mechanical, and surface morphological properties of composite nanostrutures based on silver nanowires (AgNW) and PEDOT:PSS conducting polymer for the use as flexible and transparent electrodes. Compared to ITO or the single material of AgNW or PEDOT:PSS, the AgNW/PEDOT:PSS composite electrode showed high electrical conductivity with a low sheet resistance of 26.8 Ω/sq at 91% transmittance (at 550 nm), improves surface smoothness, and enhances mechanical properties assisted by an amphiphilic fluoro-surfactant. The polymeric light-emitting diodes (PLEDs) and organic solar cells (OSCs) using the AgNW/PEDOT:PSS composite electrode showed higher device performances than those with AgNW and PEDOT:PSS electrodes and excellent flexibility under bending test. These results indicates that the AgNW/PEDOT:PSS composite presented is a good candidate as next-generation transparent elelctrodes for applications into flexible optoelectronic devices. [Figure not available: see fulltext.

EDFA-based coupled opto-electronic oscillator and its phase noise

NASA Technical Reports Server (NTRS)

Salik, Ertan; Yu, Nan; Tu, Meirong; Maleki, Lute

2004-01-01

EDFA-based coupled opto-electronic oscillator (COEO), an integrated optical and microwave oscillator that can generate picosecond optical pulses, is presented. the phase noise measurements of COEO show better performance than synthesizer-driven mode-locked laser.

Relative-Motion Sensors and Actuators for Two Optical Tables

NASA Technical Reports Server (NTRS)

Gursel, Yekta; McKenney, Elizabeth

2004-01-01

Optoelectronic sensors and magnetic actuators have been developed as parts of a system for controlling the relative position and attitude of two massive optical tables that float on separate standard air suspensions that attenuate ground vibrations. In the specific application for which these sensors and actuators were developed, one of the optical tables holds an optical system that mimics distant stars, while the other optical table holds a test article that simulates a spaceborne stellar interferometer that would be used to observe the stars. The control system is designed to suppress relative motion of the tables or, on demand, to impose controlled relative motion between the tables. The control system includes a sensor system that detects relative motion of the tables in six independent degrees of freedom and a drive system that can apply force to the star-simulator table in the six degrees of freedom. The sensor system includes (1) a set of laser heterodyne gauges and (2) a set of four diode lasers on the star-simulator table, each aimed at one of four quadrant photodiodes at nominal corresponding positions on the test-article table. The heterodyne gauges are used to measure relative displacements along the x axis.

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties.

PubMed

Stavarache, Ionel; Maraloiu, Valentin Adrian; Prepelita, Petronela; Iordache, Gheorghe

2016-01-01

Obtaining high-quality materials, based on nanocrystals, at low temperatures is one of the current challenges for opening new paths in improving and developing functional devices in nanoscale electronics and optoelectronics. Here we report a detailed investigation of the optimization of parameters for the in situ synthesis of thin films with high Ge content (50 %) into SiO 2 . Crystalline Ge nanoparticles were directly formed during co-deposition of SiO 2 and Ge on substrates at 300, 400 and 500 °C. Using this approach, effects related to Ge-Ge spacing are emphasized through a significant improvement of the spatial distribution of the Ge nanoparticles and by avoiding multi-step fabrication processes or Ge loss. The influence of the preparation conditions on structural, electrical and optical properties of the fabricated nanostructures was studied by X-ray diffraction, transmission electron microscopy, electrical measurements in dark or under illumination and response time investigations. Finally, we demonstrate the feasibility of the procedure by the means of an Al/n-Si/Ge:SiO 2 /ITO photodetector test structure. The structures, investigated at room temperature, show superior performance, high photoresponse gain, high responsivity (about 7 AW -1 ), fast response time (0.5 µs at 4 kHz) and great optoelectronic conversion efficiency of 900% in a wide operation bandwidth, from 450 to 1300 nm. The obtained photoresponse gain and the spectral width are attributed mainly to the high Ge content packed into a SiO 2 matrix showing the direct connection between synthesis and optical properties of the tested nanostructures. Our deposition approach put in evidence the great potential of Ge nanoparticles embedded in a SiO 2 matrix for hybrid integration, as they may be employed in structures and devices individually or with other materials, hence the possibility of fabricating various heterojunctions on Si, glass or flexible substrates for future development of Si-based integrated optoelectronics.

Emissive polymeric materials for optoelectronic devices

DOEpatents

Shiang, Joseph John [Niskayuna, NY; Chichak, Kelly Scott [Clifton Park, NY; Cella, James Anthony [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Janora, Kevin Henry [Schenectady, NY

2011-07-05

Polymers including at least one structural unit derived from a compound of formula I or including at least one pendant group of formula II may be used in optoelectronic devices ##STR00001## wherein R.sup.1, R.sup.3, R.sup.4 and R.sup.6 are independently hydrogen, alkyl, alkoxy, oxaalkyl, alkylaryl, aryl, arylalkyl, heteroaryl, substituted alkyl; substituted alkoxy, substituted oxaalkyl, substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted heteroaryl; R.sup.1a is hydrogen or alkyl; R.sup.2 is alkylene, substituted alkylene, oxaalkylene, CO, or CO.sub.2; R.sup.2a is alkylene; R.sup.5 is independently at each occurrence hydrogen, alkyl, alkylaryl, aryl, arylalkyl, alkoxy, carboxy, substituted alkyl; substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted alkoxy, X is halo, triflate, --B(OR.sup.1a).sub.2, or ##STR00002## located at the 2, 5- or 2, 7-positions; and L is derived from phenylpyridine, tolylpyridine, benzothienylpyridine, phenylisoquinoline, dibenzoquinozaline, fluorenylpyridine, ketopyrrole, 2-(1-naphthyl)benzoxazole)), 2-phenylbenzoxazole, 2-phenylbenzothiazole, coumarin, thienylpyridine, phenylpyridine, benzothienylpyridine, 3-methoxy-2-phenylpyridine, thienylpyridine, phenylimine, vinylpyridine, pyridylnaphthalene, pyridylpyrrole, pyridylimidazole, phenylindole, derivatives thereof or combinations thereof.

Atom Probe Tomography Analysis of Gallium-Nitride-Based Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Prosa, Ty J.; Olson, David; Giddings, A. Devin; Clifton, Peter H.; Larson, David J.; Lefebvre, Williams

2014-03-01

Thin-film light-emitting diodes (LEDs) composed of GaN/InxGa1-xN/GaN quantum well (QW) structures are integrated into modern optoelectronic devices because of the tunable InGaN band-gap enabling emission of the full visible spectrum. Atom probe tomography (APT) offers unique capabilities for 3D device characterization including compositional mapping of nano-volumes (>106 nm3) , high detection efficiency (>50%), and good sensitivity. In this study, APT is used to understand the distribution of dopants as well as Al and In alloying agents in a GaN device. Measurements using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have also been made to improve the accuracy of the APT analysis by correlating the information content of these complimentary techniques. APT analysis reveals various QW and other optoelectronic structures including a Mg p-GaN layer, an Al-rich electron blocking layer, an In-rich multi-QW region, and an In-based super-lattice structure. The multi-QW composition shows good quantitative agreement with layer thickness and spacing extracted from a high resolution TEM image intensity analysis.

Investigation of a mathematical model of the system of electro-optical sensors for monitoring nonlinear surfaces

NASA Astrophysics Data System (ADS)

Petrochenko, Andrew V.; Konyakhin, Igor A.

2015-06-01

Actually during construction of the high building actively are used objects of various nonlinear surface, for example, sinuous (parabolic or hyperbolic) roofs of the sport complexes that require automatic deformation control [1,2,3,4]. This type of deformation has character of deflection that is impossible to monitor objectively with just one optoelectronic sensor (which is fixed on this surface). In this article is described structure of remote optoelectronic sensor, which is part of the optoelectronic monitoring system of nonlinear surface, and mathematical transformation of exterior orientation sensor elements in the coordinates of control points.

Magnetic and optoelectronic properties of gold nanocluster-thiophene assembly.

PubMed

Qin, Wei; Lohrman, Jessica; Ren, Shenqiang

2014-07-07

Nanohybrids consisting of Au nanocluster and polythiophene nanowire assemblies exhibit unique thermal-responsive optical behaviors and charge-transfer controlled magnetic and optoelectronic properties. The ultrasmall Au nanocluster enhanced photoabsorption and conductivity effectively improves the photocurrent of nanohybrid based photovoltaics, leading to an increase of power conversion efficiency by 14 % under AM 1.5 illumination. In addition, nanohybrids exhibit electric field controlled spin resonance and magnetic field sensing behaviors, which open up the potential of charge-transfer complex system where the magnetism and optoelectronics interact. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transfer printing techniques for materials assembly and micro/nanodevice fabrication.

PubMed

Carlson, Andrew; Bowen, Audrey M; Huang, Yonggang; Nuzzo, Ralph G; Rogers, John A

2012-10-09

Transfer printing represents a set of techniques for deterministic assembly of micro-and nanomaterials into spatially organized, functional arrangements with two and three-dimensional layouts. Such processes provide versatile routes not only to test structures and vehicles for scientific studies but also to high-performance, heterogeneously integrated functional systems, including those in flexible electronics, three-dimensional and/or curvilinear optoelectronics, and bio-integrated sensing and therapeutic devices. This article summarizes recent advances in a variety of transfer printing techniques, ranging from the mechanics and materials aspects that govern their operation to engineering features of their use in systems with varying levels of complexity. A concluding section presents perspectives on opportunities for basic and applied research, and on emerging use of these methods in high throughput, industrial-scale manufacturing. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All-dielectric resonant cavity-enabled metals with broadband optical transparency

NASA Astrophysics Data System (ADS)

Liu, Zhengqi; Zhang, Houjiao; Liu, Xiaoshan; Pan, Pingping; Liu, Yi; Tang, Li; Liu, Guiqiang

2017-06-01

Metal films with broadband optical transparency are desirable in many optoelectronic devices, such as displays, smart windows, light-emitting diodes and infrared detectors. As bare metal is opaque to light, this issue of transparency attracts great scientific interest. In this work, we proposed and demonstrated a feasible and universal approach for achieving broadband optical transparent (BOT) metals by utilizing all-dielectric resonant cavities. Resonant dielectrics provide optical cavity modes and couple strongly with the surface plasmons of the metal film, and therefore produce a broadband near-unity optical transparent window. The relative enhancement factor (EF) of light transmission exceeds 3400% in comparison with that of pure metal film. Moreover, the transparent metal motif can be realized by other common metals including gold (Au), silver (Ag) and copper (Cu). These optical features together with the fully retained electric and mechanical properties of a natural metal suggest that it will have wide applications in optoelectronic devices.

Metal oxides for optoelectronic applications.

PubMed

Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

2016-04-01

Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

Metal oxides for optoelectronic applications

NASA Astrophysics Data System (ADS)

Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

2016-04-01

Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

The hybrid photonic planar integrated receiver with a polymer optical waveguide

NASA Astrophysics Data System (ADS)

Busek, Karel; Jerábek, Vitezslav; Armas Arciniega, Julio; Prajzler, Václav

2008-11-01

This article describes design of the photonic receiver composed of the system polymer planar waveguides, InGaAs p-i-n photodiode and integrated HBT amplifier on a low loss composite substrate. The photonic receiver was the main part of the hybrid integrated microwave optoelectronic transceiver TRx (transciever TRx) for the optical networks PON (passive optical networks) with FTTH (fiber-to-the-home) topology. In this article are presented the research results of threedimensional field between output facet of a optical waveguide and p-i-n photodiode. In terms of our research, there was optimized the optical coupling among the facet waveguide and pi-n photodiode and the electrical coupling among p-i-n photodiode and input of HBT amplifier. The hybrid planar lightwave circuit (PLC) of the transceiver TRx will be composed from a two parts - polymer optical waveguide including VHGT filter section and a optoelectronic microwave section.

Transparent conductive coatings

NASA Technical Reports Server (NTRS)

Ashok, S.

1983-01-01

Thin film transparent conductors are discussed. Materials with electrical conductivity and optical transparency are highly desirable in many optoelectronic applications including photovoltaics. Certain binary oxide semiconductors such as tin oxide (SnO2) and indium oxide (In2O3) offer much better performance tradeoff in optoelectronics as well as better mechanical and chemical stability than thin semitransparent films. These thin-film transparent conductors (TC) are essentially wide-bandgap degenerate semiconductors - invariably n-type - and hence are transparent to sub-bandgap (visible) radiation while affording high electrical conductivity due to the large free electron concentration. The principal performance characteristics of TC's are, of course, electrical conductivity and optical transmission. The TC's have a refractive index of around 2.0 and hence act as very efficient antireflection coatings. For using TC's in surface barrier solar cells, the photovoltaic barrier is of utmost importance and so the work function or electron affinity of the TC is also a very important material parameter. Fabrication processes are discussed.

Photonics Applications and Web Engineering: WILGA 2017

NASA Astrophysics Data System (ADS)

Romaniuk, Ryszard S.

2017-08-01

XLth Wilga Summer 2017 Symposium on Photonics Applications and Web Engineering was held on 28 May-4 June 2017. The Symposium gathered over 350 participants, mainly young researchers active in optics, optoelectronics, photonics, modern optics, mechatronics, applied physics, electronics technologies and applications. There were presented around 300 oral and poster papers in a few main topical tracks, which are traditional for Wilga, including: bio-photonics, optical sensory networks, photonics-electronics-mechatronics co-design and integration, large functional system design and maintenance, Internet of Things, measurement systems for astronomy, high energy physics experiments, and other. The paper is a traditional introduction to the 2017 WILGA Summer Symposium Proceedings, and digests some of the Symposium chosen key presentations. This year Symposium was divided to the following topical sessions/conferences: Optics, Optoelectronics and Photonics, Computational and Artificial Intelligence, Biomedical Applications, Astronomical and High Energy Physics Experiments Applications, Material Research and Engineering, and Advanced Photonics and Electronics Applications in Research and Industry.

Non-Toxic Gold Nanoclusters for Solution-Processed White Light-Emitting Diodes.

PubMed

Chao, Yu-Chiang; Cheng, Kai-Ping; Lin, Ching-Yi; Chang, Yu-Li; Ko, Yi-Yun; Hou, Tzu-Yin; Huang, Cheng-Yi; Chang, Walter H; Lin, Cheng-An J

2018-06-11

Solution-processed optoelectronic devices are attractive because of the potential low-cost fabrication and the compatibility with flexible substrate. However, the utilization of toxic elements such as lead and cadmium in current optoelectronic devices on the basis of colloidal quantum dots raises environmental concerns. Here we demonstrate that white-light-emitting diodes can be achieved by utilizing non-toxic and environment-friendly gold nanoclusters. Yellow-light-emitting gold nanoclusters were synthesized and capped with trioctylphosphine. These gold nanoclusters were then blended with the blue-light-emitting organic host materials to form the emissive layer. A current efficiency of 0.13 cd/A was achieved. The Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.33) were obtained from our experimental analysis, which is quite close to the ideal pure white emission coordinates (0.33, 0.33). Potential applications include innovative lighting devices and monitor backlight.

Advanced Opto-Electronics (LIDAR and Microsensor Development)

NASA Technical Reports Server (NTRS)

Vanderbilt, Vern C. (Technical Monitor); Spangler, Lee H.

2005-01-01

Our overall intent in this aspect of the project were to establish a collaborative effort between several departments at Montana State University for developing advanced optoelectronic technology for advancing the state-of-the-art in optical remote sensing of the environment. Our particular focus was on development of small systems that can eventually be used in a wide variety of applications that might include ground-, air-, and space deployments, possibly in sensor networks. Specific objectives were to: 1) Build a field-deployable direct-detection lidar system for use in measurements of clouds, aerosols, fish, and vegetation; 2) Develop a breadboard prototype water vapor differential absorption lidar (DIAL) system based on highly stable, tunable diode laser technology developed previously at MSU. We accomplished both primary objectives of this project, in developing a field-deployable direct-detection lidar and a breadboard prototype of a water vapor DIAL system. Paper summarizes each of these accomplishments.

DOC II 32-bit digital optical computer: optoelectronic hardware and software

NASA Astrophysics Data System (ADS)

Stone, Richard V.; Zeise, Frederick F.; Guilfoyle, Peter S.

1991-12-01

This paper describes current electronic hardware subsystems and software code which support OptiComp's 32-bit general purpose digital optical computer (DOC II). The reader is referred to earlier papers presented in this section for a thorough discussion of theory and application regarding DOC II. The primary optoelectronic subsystems include the drive electronics for the multichannel acousto-optic modulators, the avalanche photodiode amplifier, as well as threshold circuitry, and the memory subsystems. This device utilizes a single optical Boolean vector matrix multiplier and its VME based host controller interface in performing various higher level primitives. OptiComp Corporation wishes to acknowledge the financial support of the Office of Naval Research, the National Aeronautics and Space Administration, the Rome Air Development Center, and the Strategic Defense Initiative Office for the funding of this program under contracts N00014-87-C-0077, N00014-89-C-0266 and N00014-89-C- 0225.

One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

PubMed Central

2009-01-01

The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2nanowires, one-dimensional (1-D) nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, andp–nheterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities. PMID:20596452

Photonic integrated circuits based on sampled-grating distributed-Bragg-reflector lasers

NASA Astrophysics Data System (ADS)

Barton, Jonathon S.; Skogen, Erik J.; Masanovic, Milan L.; Raring, James; Sysak, Matt N.; Johansson, Leif; DenBaars, Steven P.; Coldren, Larry A.

2003-07-01

The Sampled-Grating Distributed-Bragg-Reflector laser(SGDBR) provides wide tunability (>40nm), and high output power (>10mW). Driven by the demand for network reconfigurability and ease of implementation, the SGDBR has moved from the research lab to be commercially viable in the marketplace. The SGDBR is most often implemented using an offset-quantum well epitaxial structure in which the quantum wells are etched off in the passive sections. Alternatively, quantum well intermixing has been used recently to achieve the same goal - resulting in improved optical gain and the potential for multiple bandgaps along the device structure. These epitaxial "platforms" provide the basis for more exotic opto-electronic device functionality exhibiting low chirp for digital applications and enhanced linearity for analog applications. This talk will cover state-of-the-art opto-electronic devices based on the SGDBR platform including: integrated Mach-Zehnder modulators, and integrated electro-absorption modulators.

Organic photosensitive cells grown on rough electrode with nano-scale morphology control

DOEpatents

Yang, Fan [Piscataway, NJ; Forrest, Stephen R [Ann Arbor, MI

2011-06-07

An optoelectronic device and a method for fabricating the optoelectronic device includes a first electrode disposed on a substrate, an exposed surface of the first electrode having a root mean square roughness of at least 30 nm and a height variation of at least 200 nm, the first electrode being transparent. A conformal layer of a first organic semiconductor material is deposited onto the first electrode by organic vapor phase deposition, the first organic semiconductor material being a small molecule material. A layer of a second organic semiconductor material is deposited over the conformal layer. At least some of the layer of the second organic semiconductor material directly contacts the conformal layer. A second electrode is deposited over the layer of the second organic semiconductor material. The first organic semiconductor material is of a donor-type or an acceptor-type relative to the second organic semiconductor material, which is of the other material type.

Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference

DOEpatents

Georgiades, N.P.; Polzik, E.S.; Kimble, H.J.

1999-02-02

An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies are disclosed. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100`s THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 {micro}m to 1.66 {micro}m for fiber optics can be accomplished with a nearly continuous frequency coverage. 7 figs.

Nanowire Optoelectronics

NASA Astrophysics Data System (ADS)

Wang, Zhihuan; Nabet, Bahram

2015-12-01

Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes,"which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light inNWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

Structure and Growth Control of Organic–Inorganic Halide Perovskites for Optoelectronics: From Polycrystalline Films to Single Crystals

PubMed Central

Chen, Yani; He, Minhong; Peng, Jiajun; Sun, Yong

2016-01-01

Recently, organic–inorganic halide perovskites have sparked tremendous research interest because of their ground‐breaking photovoltaic performance. The crystallization process and crystal shape of perovskites have striking impacts on their optoelectronic properties. Polycrystalline films and single crystals are two main forms of perovskites. Currently, perovskite thin films have been under intensive investigation while studies of perovskite single crystals are just in their infancy. This review article is concentrated upon the control of perovskite structures and growth, which are intimately correlated for improvements of not only solar cells but also light‐emitting diodes, lasers, and photodetectors. We begin with the survey of the film formation process of perovskites including deposition methods and morphological optimization avenues. Strategies such as the use of additives, thermal annealing, solvent annealing, atmospheric control, and solvent engineering have been successfully employed to yield high‐quality perovskite films. Next, we turn to summarize the shape evolution of perovskites single crystals from three‐dimensional large sized single crystals, two‐dimensional nanoplates, one‐dimensional nanowires, to zero‐dimensional quantum dots. Siginificant functions of perovskites single crystals are highlighted, which benefit fundamental studies of intrinsic photophysics. Then, the growth mechanisms of the previously mentioned perovskite crystals are unveiled. Lastly, perspectives for structure and growth control of perovskites are outlined towards high‐performance (opto)electronic devices. PMID:27812463

Diverse Functionalities of Vertically Stacked Graphene/Single layer n-MoS2/SiO2/p-GaN Heterostructures.

PubMed

Perumal, Packiyaraj; Karuppiah, Chelladurai; Liao, Wei-Cheng; Liou, Yi-Rou; Liao, Yu-Ming; Chen, Yang-Fang

2017-08-30

Integrating different dimentional materials on vertically stacked p-n hetero-junctions have facinated a considerable scrunity and can open up excellent feasibility with various functionalities in opto-electronic devices. Here, we demonstrate that vertically stacked p-GaN/SiO 2 /n-MoS 2 /Graphene heterostructures enable to exhibit prominent dual opto-electronic characteristics, including efficient photo-detection and light emission, which represents the emergence of a new class of devices. The photoresponsivity was found to achieve as high as ~10.4 AW -1 and the detectivity and external quantum efficiency were estimated to be 1.1 × 10 10 Jones and ~30%, respectively. These values are superier than most reported hererojunction devices. In addition, this device exhibits as a self-powered photodetector, showing a high responsivity and fast response speed. Moreover, the device demonstrates the light emission with low turn-on voltage (~1.0 V) which can be realized by electron injection from graphene electrode and holes from GaN film into monolayer MoS 2 layer. These results indicate that with a suitable choice of band alignment, the vertical stacking of materials with different dimentionalities could be significant potential for integration of highly efficient heterostructures and open up feasible pathways towards integrated nanoscale multi-functional optoelectronic devices for a variety of applications.

Passive automatic anti-piracy defense system of ships

NASA Astrophysics Data System (ADS)

Szustakowski, M.; Życzkowski, M.; Ciurapiński, W.; Karol, M.; Kastek, M.; Stachowiak, R.; Markowski, P.

2013-10-01

The article describes the technological solution for ship self-defense against pirate attacks. The paper presents the design solutions in the field of direct physical protection. All the solutions are connected with the latest optoelectronic and microwave systems and sensors to detect, recognize and the threat posed by pirates. In particular, tests of effectiveness and the detection-range of technology demonstrator developed by a team of authors were carried out.

Infrared Imagery of Shuttle (IRIS). Task 2. [indium antimonide sensors

NASA Technical Reports Server (NTRS)

Chocol, C. J.

1978-01-01

An opto-electronic breadboard of 10 channels of the IR temperature measuring system was produced as well as a scaled up portion of the tracking system reticle in order to verify Task 1 assumptions. The breadboards and the tests performed on them are described and both raw and reduced data are presented. Tests show that the electronics portion of the imaging system will provide a dc to 10,000 Hz bandwidth that is flat and contributes no more than 0.4% of full-scale uncertainty to the measurement. Conventional packaging is adequate for the transresistance amplifier design. Measurement errors expected from all sources tested are discussed.

Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

NASA Astrophysics Data System (ADS)

Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

2003-06-01

We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

Optoelectronic Integrated Circuits For Neural Networks

NASA Technical Reports Server (NTRS)

Psaltis, D.; Katz, J.; Kim, Jae-Hoon; Lin, S. H.; Nouhi, A.

1990-01-01

Many threshold devices placed on single substrate. Integrated circuits containing optoelectronic threshold elements developed for use as planar arrays of artificial neurons in research on neural-network computers. Mounted with volume holograms recorded in photorefractive crystals serving as dense arrays of variable interconnections between neurons.

Inverted organic photosensitive devices

DOEpatents

Forrest, Stephen R.; Bailey-Salzman, Rhonda F.

2016-12-06

The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.

Study of application and key technology of the high-energy laser weapon in optoelectronic countermeasure

NASA Astrophysics Data System (ADS)

Qu, Zhou; Xing, Hao; Wang, Dawei; Wang, Qiugui

2015-10-01

High-energy Laser weapon is a new-style which is developing rapidly nowadays. It is a one kind of direction energy weapon which can destroy the targets or make them invalid. High-energy Laser weapon has many merits such as concentrated energy, fast transmission, long operating range, satisfied precision, fast shift fire, anti-electromagnetic interference, reusability, cost-effectiveness. High-energy Laser weapon has huge potential for modern warfare since its laser beam launch attack to the target by the speed of light. High-energy Laser weapon can be deployed by multiple methods such as skyborne, carrier borne, vehicle-mounted, foundation, space platform. Besides the connection with command and control system, High-energy Laser weapon is consist of high-energy laser and beam steering. Beam steering is comprised of Large diameter launch system and Precision targeting systems. Meanwhile, beam steering includes the distance measurement of target location, detection system of television and infrared sensor, adaptive optical system of Laser atmospheric distortion correction. The development of laser technology is very fast in recent years. A variety of laser sources have been regarded as the key component in many optoelectronic devices. For directed energy weapon, the progress of laser technology has greatly improved the tactical effectiveness, such as increasing the range and strike precision. At the same time, the modern solid-state laser has become the ideal optical source for optical countermeasure, because it has high photoelectric conversion efficiency and small volume or weight. However, the total performance is limited by the mutual cooperation between different subsystems. The optical countermeasure is a complex technique after many years development. The key factor to evaluate the laser weapon can be formulated as laser energy density to target. This article elaborated the laser device technology of optoelectronic countermeasure and Photoelectric tracking technology. Also the allocation of optoelectronic countermeasure was discussed in this article. At last, this article prospected the future development of high-energy laser.

Optoelectronic lessons as an interdisciplinary lecture

NASA Astrophysics Data System (ADS)

Wu, Dan; Wu, Maocheng; Gu, Jihua

2017-08-01

It is noticed that more and more students in college are passionately curious about the optoelectronic technology, since optoelectronic technology has advanced extremely quickly during the last five years and its applications could be found in a lot of domains. The students who are interested in this area may have different educational backgrounds and their majors cover science, engineering, literature and social science, etc. Our course "History of the Optoelectronic Technology" is set up as an interdisciplinary lecture of the "liberal education" at our university, and is available for all students with different academic backgrounds from any departments of our university. The main purpose of the course is to show the interesting and colorful historical aspects of the development of this technology, so that the students from different departments could absorb the academic nourishment they wanted. There are little complex derivations of physical formulas through the whole lecture, but there are still some difficulties about the lecture which is discussed in this paper.

Adaptive integral backstepping sliding mode control for opto-electronic tracking system based on modified LuGre friction model

NASA Astrophysics Data System (ADS)

Yue, Fengfa; Li, Xingfei; Chen, Cheng; Tan, Wenbin

2017-12-01

In order to improve the control accuracy and stability of opto-electronic tracking system fixed on reef or airport under friction and external disturbance conditions, adaptive integral backstepping sliding mode control approach with friction compensation is developed to achieve accurate and stable tracking for fast moving target. The nonlinear observer and slide mode controller based on modified LuGre model with friction compensation can effectively reduce the influence of nonlinear friction and disturbance of this servo system. The stability of the closed-loop system is guaranteed by Lyapunov theory. The steady-state error of the system is eliminated by integral action. The adaptive integral backstepping sliding mode controller and its performance are validated by a nonlinear modified LuGre dynamic model of the opto-electronic tracking system in simulation and practical experiments. The experiment results demonstrate that the proposed controller can effectively realise the accuracy and stability control of opto-electronic tracking system.

Highly conductive transparent organic electrodes with multilayer structures for rigid and flexible optoelectronics.

PubMed

Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

2015-05-27

Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric-metal-dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq(-1) at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices.

Cultivation of students' engineering designing ability based on optoelectronic system course project

NASA Astrophysics Data System (ADS)

Cao, Danhua; Wu, Yubin; Li, Jingping

2017-08-01

We carry out teaching based on optoelectronic related course group, aiming at junior students majored in Optoelectronic Information Science and Engineering. " Optoelectronic System Course Project " is product-designing-oriented and lasts for a whole semester. It provides a chance for students to experience the whole process of product designing, and improve their abilities to search literature, proof schemes, design and implement their schemes. In teaching process, each project topic is carefully selected and repeatedly refined to guarantee the projects with the knowledge integrity, engineering meanings and enjoyment. Moreover, we set up a top team with professional and experienced teachers, and build up learning community. Meanwhile, the communication between students and teachers as well as the interaction among students are taken seriously in order to improve their team-work ability and communicational skills. Therefore, students are not only able to have a chance to review the knowledge hierarchy of optics, electronics, and computer sciences, but also are able to improve their engineering mindset and innovation consciousness.

Optoelectronic properties of valence-state-controlled amorphous niobium oxide

NASA Astrophysics Data System (ADS)

Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

2016-06-01

In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system

NASA Astrophysics Data System (ADS)

Liu, Yang; Wang, Sheng; Liu, Huaping; Peng, Lian-Mao

2017-06-01

Single material-based monolithic optoelectronic integration with complementary metal oxide semiconductor-compatible signal processing circuits is one of the most pursued approaches in the post-Moore era to realize rapid data communication and functional diversification in a limited three-dimensional space. Here, we report an electrically driven carbon nanotube-based on-chip three-dimensional optoelectronic integrated circuit. We demonstrate that photovoltaic receivers, electrically driven transmitters and on-chip electronic circuits can all be fabricated using carbon nanotubes via a complementary metal oxide semiconductor-compatible low-temperature process, providing a seamless integration platform for realizing monolithic three-dimensional optoelectronic integrated circuits with diversified functionality such as the heterogeneous AND gates. These circuits can be vertically scaled down to sub-30 nm and operates in photovoltaic mode at room temperature. Parallel optical communication between functional layers, for example, bottom-layer digital circuits and top-layer memory, has been demonstrated by mapping data using a 2 × 2 transmitter/receiver array, which could be extended as the next generation energy-efficient signal processing paradigm.

Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tripathi, Madhvendra Nath, E-mail: ommadhav27@gmail.com

2015-06-24

Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In{sub 32-x}Sn{sub x}O{sub 48+x/2}; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom ofmore » conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.« less

Optoelectronically probing the density of nanowire surface trap states to the single state limit

NASA Astrophysics Data System (ADS)

Dan, Yaping

2015-02-01

Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 109 cm-2/eV at deep levels to 1012 cm-2/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

Modification of the optoelectronic properties of two-dimensional MoS2 crystals by ultraviolet-ozone treatment

NASA Astrophysics Data System (ADS)

Yang, Hae In; Park, Seonyoung; Choi, Woong

2018-06-01

We report the modification of the optoelectronic properties of mechanically-exfoliated single layer MoS2 by ultraviolet-ozone exposure. Photoluminescence emission of pristine MoS2 monotonically decreased and eventually quenched as ultraviolet-ozone exposure time increased from 0 to 10 min. The reduction of photoluminescence emission accompanied reduction of Raman modes, suggesting structural degradation in ultraviolet-ozone exposed MoS2. Analysis with X-ray photoelectron spectroscopy revealed that the formation of Ssbnd O and Mosbnd O bonding increases with ultraviolet-ozone exposure time. Measurement of electrical transport properties of MoS2 in a bottom-gate thin-film transistor configuration suggested the presence of insulating MoO3 after ultraviolet-ozone exposure. These results demonstrate that ultraviolet-ozone exposure can significantly influence the optoelectronic properties of single layer MoS2, providing important implications on the application of MoS2 and other two-dimensional materials into optoelectronic devices.

Web-Enabled Optoelectronic Particle-Fallout Monitor

NASA Technical Reports Server (NTRS)

Lineberger, Lewis P.

2008-01-01

A Web-enabled optoelectronic particle- fallout monitor has been developed as a prototype of future such instruments that (l) would be installed in multiple locations for which assurance of cleanliness is required and (2) could be interrogated and controlled in nearly real time by multiple remote users. Like prior particle-fallout monitors, this instrument provides a measure of particles that accumulate on a surface as an indication of the quantity of airborne particulate contaminants. The design of this instrument reflects requirements to: Reduce the cost and complexity of its optoelectronic sensory subsystem relative to those of prior optoelectronic particle fallout monitors while maintaining or improving capabilities; Use existing network and office computers for distributed display and control; Derive electric power for the instrument from a computer network, a wall outlet, or a battery; Provide for Web-based retrieval and analysis of measurement data and of a file containing such ancillary data as a log of command attempts at remote units; and Use the User Datagram Protocol (UDP) for maximum performance and minimal network overhead.

The ship-borne infrared searching and tracking system based on the inertial platform

NASA Astrophysics Data System (ADS)

Li, Yan; Zhang, Haibo

2011-08-01

As a result of the radar system got interferenced or in the state of half silent ,it can cause the guided precision drop badly In the modern electronic warfare, therefore it can lead to the equipment depended on electronic guidance cannot strike the incoming goals exactly. It will need to rely on optoelectronic devices to make up for its shortcomings, but when interference is in the process of radar leading ,especially the electro-optical equipment is influenced by the roll, pitch and yaw rotation ,it can affect the target appear outside of the field of optoelectronic devices for a long time, so the infrared optoelectronic equipment can not exert the superiority, and also it cannot get across weapon-control system "reverse bring" missile against incoming goals. So the conventional ship-borne infrared system unable to track the target of incoming quickly , the ability of optoelectronic rivalry declines heavily.Here we provide a brand new controlling algorithm for the semi-automatic searching and infrared tracking based on inertial navigation platform. Now it is applying well in our XX infrared optoelectronic searching and tracking system. The algorithm is mainly divided into two steps: The artificial mode turns into auto-searching when the deviation of guide exceeds the current scene under the course of leading for radar.When the threshold value of the image picked-up is satisfied by the contrast of the target in the searching scene, the speed computed by using the CA model Least Square Method feeds back to the speed loop. And then combine the infrared information to accomplish the closed-loop control of the infrared optoelectronic system tracking. The algorithm is verified via experiment. Target capturing distance is 22.3 kilometers on the great lead deviation by using the algorithm. But without using the algorithm the capturing distance declines 12 kilometers. The algorithm advances the ability of infrared optoelectronic rivalry and declines the target capturing time by using semi-automatic searching and reliable capturing-tracking, when the lead deviation of the radar is great.

Releasable High-Mechanical-Advantage Linear Actuator

NASA Technical Reports Server (NTRS)

Young, Gordon H.

1994-01-01

Proposed linear actuator includes ball-screw mechanism made to engage or disengage piston as needed. Requires low power to maintain release and no power to maintain engagement. Pins sliding radially in solenoids in yoke engage or disengage slot in piston. With help of optoelectronic feedback, yoke made to follow free piston during disengagement so always in position to "grab" piston.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Abhilasha, E-mail: abhilasha.vnit@gmail.com; Kumar, Ashwini; Peshwe, D. R.

Rare earth activated hybrid phosphors have made significant progress in terms of better light output, color properties and potential for long life. All these features coupled with low cost production and reduced maintenance have offered phosphor converted LEDs for diverse optoelectronic applications including signal lighting in advanced aviation. The present paper explores the effect of various processing parameters on luminescent hybrid phosphors fabricated through combustion synthesis.

An Optoelectronics Research Center

DTIC Science & Technology

2006-03-08

compared with a -2 mm wide slab, -200 nrn thick silicon (SOl) top-only-gate planar MOSFET with otherwise similar doping profiles, gate length and...acoustic phonons, impurity doping profile and surface roughness influences the transport process in the channel regions. The electron mobility in the...application areas including: nanoscale epitaxial growth for semiconductor heterostructures; nanofluidics for biological separations; nanomagnetics for

SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Method of implementation of optoelectronic multiparametric signal processing systems based on multivalued-logic principles

NASA Astrophysics Data System (ADS)

Arestova, M. L.; Bykovskii, A. Yu

1995-10-01

An architecture is proposed for a specialised optoelectronic multivalued logic processor based on the Allen—Givone algebra. The processor is intended for multiparametric processing of data arriving from a large number of sensors or for tackling spectral analysis tasks. The processor architecture makes it possible to obtain an approximate general estimate of the state of an object being diagnosed on a p-level scale. Optoelectronic systems are proposed for MAXIMUM, MINIMUM, and LITERAL logic gates, based on optical-frequency encoding of logic levels. Corresponding logic gates form a complete set of logic functions in the Allen—Givone algebra.

OPTICAL PROCESSING OF INFORMATION: Multistage optoelectronic two-dimensional image switches

NASA Astrophysics Data System (ADS)

Fedorov, V. B.

1994-06-01

The implementation principles and the feasibility of construction of high-throughput multistage optoelectronic switches, capable of transmitting data in the form of two-dimensional images along interconnected pairs of optical channels, are considered. Different ways of realising compact switches are proposed. They are based on the use of polarisation-sensitive elements, arrays of modulators of the plane of polarisation of light, arrays of objectives, and free-space optics. Optical systems of such switches can theoretically ensure that the resolution and optical losses in two-dimensional image transmission are limited only by diffraction. Estimates are obtained of the main maximum-performance parameters of the proposed optoelectronic image switches.

Widely tunable opto-electronic oscillator

NASA Astrophysics Data System (ADS)

Maxin, J.; Pillet, G.; Morvan, L.; Dolfi, D.

2012-03-01

We present here a widely tunable opto-electronic oscillator (OEO) based on an Er,Yb:glass Dual Frequency Laser (DFL) at 1.53 μm. The beatnote is stabilized with an optical fiber delay line. Compared to classical optoelectronic oscillators, this architecture does not need RF filter and offers a wide tunability. We measured a reduction of 67 dB of the phase noise power spectral density (PSD) at 10 Hz of the carrier optical fiber leading to a level of -27 dBc/Hz with only 100 m optical fiber. Moreover, the scheme offers a microwave signal tunability from 2.5 to 5.5 GHz limited by the RF components.

Organic-Inorganic Composites of Semiconductor Nanocrystals for Efficient Excitonics.

PubMed

Guzelturk, Burak; Demir, Hilmi Volkan

2015-06-18

Nanocomposites of colloidal semiconductor nanocrystals integrated into conjugated polymers are the key to soft-material hybrid optoelectronics, combining advantages of both plastics and particles. Synergic combination of the favorable properties in the hybrids of colloidal nanocrystals and conjugated polymers offers enhanced performance and new functionalities in light-generation and light-harvesting applications, where controlling and mastering the excitonic interactions at the nanoscale are essential. In this Perspective, we highlight and critically consider the excitonic interactions in the organic-inorganic nanocomposites to achieve highly efficient exciton transfer through rational design of the nanocomposites. The use of strong excitonic interactions in optoelectronic devices can trigger efficiency breakthroughs in hybrid optoelectronics.

Compensating Unknown Time-Varying Delay in Opto-Electronic Platform Tracking Servo System.

PubMed

Xie, Ruihong; Zhang, Tao; Li, Jiaquan; Dai, Ming

2017-05-09

This paper investigates the problem of compensating miss-distance delay in opto-electronic platform tracking servo system. According to the characteristic of LOS (light-of-sight) motion, we setup the Markovian process model and compensate this unknown time-varying delay by feed-forward forecasting controller based on robust H∞ control. Finally, simulation based on double closed-loop PI (Proportion Integration) control system indicates that the proposed method is effective for compensating unknown time-varying delay. Tracking experiments on the opto-electronic platform indicate that RMS (root-mean-square) error is 1.253 mrad when tracking 10° 0.2 Hz signal.

Chemically derived graphene oxide: towards large-area thin-film electronics and optoelectronics.

PubMed

Eda, Goki; Chhowalla, Manish

2010-06-11

Chemically derived graphene oxide (GO) possesses a unique set of properties arising from oxygen functional groups that are introduced during chemical exfoliation of graphite. Large-area thin-film deposition of GO, enabled by its solubility in a variety of solvents, offers a route towards GO-based thin-film electronics and optoelectronics. The electrical and optical properties of GO are strongly dependent on its chemical and atomic structure and are tunable over a wide range via chemical engineering. In this Review, the fundamental structure and properties of GO-based thin films are discussed in relation to their potential applications in electronics and optoelectronics.

Modelling of optoelectronic circuits based on resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

2017-08-01

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Optoelectronic devices, plasmonics, and photonics with topological insulators

NASA Astrophysics Data System (ADS)

Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.

2017-03-01

Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.

A practice course to cultivate students' comprehensive ability of photoelectricity

NASA Astrophysics Data System (ADS)

Lv, Yong; Liu, Yang; Niu, Chunhui; Liu, Lishuang

2017-08-01

After the studying of many theoretical courses, it's important and urgent for the students from specialty of optoelectronic information science and engineering to cultivate their comprehensive ability of photoelectricity. We set up a comprehensive practice course named "Integrated Design of Optoelectronic Information System" (IDOIS) for the purpose that students can integrate their knowledge of optics, electronics and computer programming to design, install and debug an optoelectronic system with independent functions. Eight years of practice shows that this practice course can train students' ability of analysis, design/development and debugging of photoelectric system, improve their ability in document retrieval, design proposal and summary report writing, teamwork, innovation consciousness and skill.

Curriculum system for experimental teaching in optoelectronic information

NASA Astrophysics Data System (ADS)

Di, Hongwei; Chen, Zhenqiang; Zhang, Jun; Luo, Yunhan

2017-08-01

The experimental curriculum system is directly related to talent training quality. Based on the careful investigation of the developing request of the optoelectronic information talents in the new century, the experimental teaching goal and the content, the teaching goal was set to cultivate students' innovative consciousness, innovative thinking, creativity and problem solving ability. Through straightening out the correlation among the experimental teaching in the main courses, the whole structure design was phased out, as well as the hierarchical curriculum connotation. According to the ideas of "basic, comprehensive, applied and innovative", the construction of experimental teaching system called "triple-three" was put forward for the optoelectronic information experimental teaching practice.

Optoelectronic Inner-Product Neural Associative Memory

NASA Technical Reports Server (NTRS)

Liu, Hua-Kuang

1993-01-01

Optoelectronic apparatus acts as artificial neural network performing associative recall of binary images. Recall process is iterative one involving optical computation of inner products between binary input vector and one or more reference binary vectors in memory. Inner-product method requires far less memory space than matrix-vector method.

GaAs optoelectronic neuron arrays

NASA Technical Reports Server (NTRS)

Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

1993-01-01

A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-12-20

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-860] Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY...

Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

DOEpatents

Thompson, Mark E [Anaheim Hills, CA; Li, Jian [Los Angeles, CA; Forrest, Stephen [Princeton, NJ; Rand, Barry [Princeton, NJ

2011-02-22

An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

Optoelectronic forces with quantum wells for cavity optomechanics in GaAs/AlAs semiconductor microcavities

NASA Astrophysics Data System (ADS)

Villafañe, V.; Sesin, P.; Soubelet, P.; Anguiano, S.; Bruchhausen, A. E.; Rozas, G.; Carbonell, C. Gomez; Lemaître, A.; Fainstein, A.

2018-05-01

Radiation pressure, electrostriction, and photothermal forces have been investigated to evidence backaction, nonlinearities, and quantum phenomena in cavity optomechanics. We show here through a detailed study of the relative intensity of the cavity mechanical modes observed when exciting with pulsed lasers close to the GaAs optical gap that optoelectronic forces involving real carrier excitation and deformation potential interaction are the strongest mechanism of light-to-sound transduction in semiconductor GaAs/AlAs distributed Bragg reflector optomechanical resonators. We demonstrate that the ultrafast spatial redistribution of the photoexcited carriers in microcavities with massive GaAs spacers leads to an enhanced coupling to the fundamental 20-GHz vertically polarized mechanical breathing mode. The carrier diffusion along the growth axis of the device can be enhanced by increasing the laser power, or limited by embedding GaAs quantum wells in the cavity spacer, a strategy used here to prove and engineer the optoelectronic forces in phonon generation with real carriers. The wavelength dependence of the observed phenomena provide further proof of the role of optoelectronic forces. The optical forces associated with the different intervening mechanisms and their relevance for dynamical backaction in optomechanics are evaluated using finite-element methods. The results presented open the path to the study of hitherto seldom investigated dynamical backaction in optomechanical solid-state resonators in the presence of optoelectronic forces.

Amino-functionalized sub-40 nm ultrathin Ag/ZnO transparent electrodes for flexible polymer dispersed liquid crystal devices

NASA Astrophysics Data System (ADS)

Huang, Jinhua; Lu, Yuehui; Wu, Wenxuan; Li, Jia; Zhang, Xianpeng; Zhu, Chaoting; Yang, Ye; Xu, Feng; Song, Weijie

2017-11-01

Various flexible transparent conducting electrodes (FTCEs) have been studied for promising applications in flexible optoelectronic devices, but there are still challenges in achieving higher transparency and conductivity, lower thickness, better mechanical flexibility, and lower preparation temperatures. In this work, we prepared a sub-40 nm Ag(9 nm)/ZnO(30 nm) FTCE at room temperature, where each layer played a relatively independent role in the tailoring of the optoelectronic properties. A continuous and smooth 9-nm Ag thin film was grown on amino-functionalized glass and polyethylene terephthalate (PET) substrates to provide good conductivity. A 30-nm ZnO cladding, as an antireflection layer, further improved the transmittance while hardly affecting the conductivity. The room-temperature grown sub-40 nm Ag/ZnO thin films on PET substrate exhibited a transmittance of 88.6% at 550 nm and a sheet resistance of 7.6 Ω.sq-1, which were superior to those of the commercial ITO. The facile preparation benefits the integration of FTCEs into various flexible optoelectronic devices, where the excellent performance of the sub-40 nm Ag/ZnO FTCEs in a flexible polymer dispersed liquid crystal device was demonstrated. Sub-40 nm Ag/ZnO FTCEs that have the characteristics of simple structure, room-temperature preparation, and easily tailored optoelectronic properties would provide flexible optoelectronic devices with more degrees of freedom.

Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.

PubMed

Xie, Yuan; Wu, Enxiu; Hu, Ruixue; Qian, Shuangbei; Feng, Zhihong; Chen, Xuejiao; Zhang, Hao; Xu, Linyan; Hu, Xiaodong; Liu, Jing; Zhang, Daihua

2018-06-21

Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2 V-1 s-1 and 2.2 × 1012 cm-2, respectively, after the treatment. At the same time, the contact resistance (Rc) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ μm to 28.4 kΩ μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 105 A W-1), short response time (<2 ms), high detectivity (3.6 × 1013 Jones) and very large photoconductive gain (>106). We have also built a lateral p-n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 106, an excellent photoresponsivity of 2.49 A W-1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials.

Mid-Infrared Optoelectronics: Materials and Devices. MIOMD-XII

DTIC Science & Technology

2014-10-01

current. An enhancement of the QEPAS signal can be achieved when two metallic tubes acting as a micro‐ resonator (mR) are added to the QTF sensor ...spectrophone configuration using a 5.8 mm long micro‐ resonator with an inner diameter of 0.80 mm [3]. In order to test and validate the developed QEPAS sensor ...materials, photodetectors, sensors and applications have been discussed in other sessions. The papers were submitted by researchers representing 107

Encryption key distribution via chaos synchronization

NASA Astrophysics Data System (ADS)

Keuninckx, Lars; Soriano, Miguel C.; Fischer, Ingo; Mirasso, Claudio R.; Nguimdo, Romain M.; van der Sande, Guy

2017-02-01

We present a novel encryption scheme, wherein an encryption key is generated by two distant complex nonlinear units, forced into synchronization by a chaotic driver. The concept is sufficiently generic to be implemented on either photonic, optoelectronic or electronic platforms. The method for generating the key bitstream from the chaotic signals is reconfigurable. Although derived from a deterministic process, the obtained bit series fulfill the randomness conditions as defined by the National Institute of Standards test suite. We demonstrate the feasibility of our concept on an electronic delay oscillator circuit and test the robustness against attacks using a state-of-the-art system identification method.

Magnetometer based on the opto-electronic microwave oscillator

NASA Astrophysics Data System (ADS)

Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute

2005-03-01

We present a scheme for an all-optical self-oscillating magnetometer based on the opto-electronic oscillator stabilized with an atomic vapor cell. We demonstrate a proof of the principle with DC magnetic field measurements characterized by 2 × 10-7 G sensitivity and 1-1000 mG dynamic range.

Efficient Optoelectronics Teaching in Undergraduate Engineering Curriculum

ERIC Educational Resources Information Center

Matin, M. A.

2005-01-01

The Engineering Department's vision for undergraduate education for the next century is to develop a set of laboratory experiences that are thoughtfully sequenced and integrated to promote the full development of students in all courses. Optoelectronics is one of the most important and most demanding courses in Electrical and Computer Engineering.…

Flip-chip assembly and reliability using gold/tin solder bumps

NASA Astrophysics Data System (ADS)

Oppermann, Hermann; Hutter, Matthias; Klein, Matthias; Reichl, Herbert

2004-09-01

Au/Sn solder bumps are commonly used for flip chip assembly of optoelectronic and RF devices. They allow a fluxless assembly which is required to avoid contamination at optical interfaces. Flip chip assembly experiments were carried out using as plated Au/Sn bumps without prior bump reflow. An RF and reliability test vehicles comprise a GaAs chip which was flip chip soldered on a silicon substrate. Temperature cycling tests with and without underfiller were performed and the results are presented. The different failure modes for underfilled and non-underfilled samples were discussed and compared. Additional reliability tests were performed with flip chip bonding by gold thermocompression for comparison. The test results and the failure modes are discussed in detail.

Electronic structure and lattice dynamics of few-layer InSe

NASA Astrophysics Data System (ADS)

Webster, Lucas; Yan, Jia-An

Studies of Group-III monochalcogenides (MX, M = Ga and In, X = S, Se, and Te) have revealed their great potentials in many optoelectronic applications, including solar energy conversion, fabrication of memory devices and solid-state batteries. Among these semiconductors, indium selenide (InSe) has attracted particular attention due to its narrower direct bandgap, which makes it suitable for photovoltaic conversion. In this work, using first-principles calculations, we present a detailed study of the energetics, atomic structures, electronic structures, and lattice dynamics of InSe layers down to two-dimensional limit, namely, monolayer InSe and bilayer InSe with various stacking geometry. Calculations using various exchange-correlation functionals and pseudopotentials are tested and compared with experimental data. The dependence of the Raman spectra on the stacking geometry and the laser polarization will also be discussed. This work is supported by the SET Grant of the Fisher College of Science and Mathematics (FCSM) at the Towson University.

Fabrication of flexible, multimodal light-emitting devices for wireless optogenetics

PubMed Central

Huang, Xian; Jung, Yei Hwan; Al-Hasani, Ream; Omenetto, Fiorenzo G.

2014-01-01

Summary The rise of optogenetics provides unique opportunities to advance materials and biomedical engineering as well as fundamental understanding in neuroscience. This protocol describes the fabrication of optoelectronic devices for studying intact neural systems. Unlike optogenetic approaches that rely on rigid fiber optics tethered to external light sources, these novel devices utilize flexible substrates to carry wirelessly powered microscale, inorganic light-emitting diodes (μ-ILEDs) and multimodal sensors inside the brain. We describe the technical procedures for construction of these devices, their corresponding radiofrequency power scavengers, and their implementation in vivo for experimental application. In total, the timeline of the procedure, including device fabrication, implantation, and preparation to begin in vivo experimentation, can be completed in approximately 3–8 weeks. Implementation of these devices allows for chronic (tested up to six months), wireless optogenetic manipulation of neural circuitry in animals experiencing behaviors such as social interaction, home cage, and other complex natural environments. PMID:24202555

Advanced optical technologies for space exploration

NASA Astrophysics Data System (ADS)

Clark, Natalie

2007-09-01

NASA Langley Research Center is involved in the development of photonic devices and systems for space exploration missions. Photonic technologies of particular interest are those that can be utilized for in-space communication, remote sensing, guidance navigation and control, lunar descent and landing, and rendezvous and docking. NASA Langley has recently established a class-100 clean-room which serves as a Photonics Fabrication Facility for development of prototype optoelectronic devices for aerospace applications. In this paper we discuss our design, fabrication, and testing of novel active pixels, deformable mirrors, and liquid crystal spatial light modulators. Successful implementation of these intelligent optical devices and systems in space, requires careful consideration of temperature and space radiation effects in inorganic and electronic materials. Applications including high bandwidth inertial reference units, lightweight, high precision star trackers for guidance, navigation, and control, deformable mirrors, wavefront sensing, and beam steering technologies are discussed. In addition, experimental results are presented which characterize their performance in space exploration systems

Creating and optimizing interfaces for electric-field and photon-induced charge transfer.

PubMed

Park, Byoungnam; Whitham, Kevin; Cho, Jiung; Reichmanis, Elsa

2012-11-27

We create and optimize a structurally well-defined electron donor-acceptor planar heterojunction interface in which electric-field and/or photon-induced charge transfer occurs. Electric-field-induced charge transfer in the dark and exciton dissociation at a pentacene/PCBM interface were probed by in situ thickness-dependent threshold voltage shift measurements in field-effect transistor devices during the formation of the interface. Electric-field-induced charge transfer at the interface in the dark is correlated with development of the pentacene accumulation layer close to PCBM, that is, including interface area, and dielectric relaxation time in PCBM. Further, we demonstrate an in situ test structure that allows probing of both exciton diffusion length and charge transport properties, crucial for optimizing optoelectronic devices. Competition between the optical absorption length and the exciton diffusion length in pentacene governs exciton dissociation at the interface. Charge transfer mechanisms in the dark and under illumination are detailed.

Advanced Optical Technologies for Space Exploration

NASA Technical Reports Server (NTRS)

Clark, Natalie

2007-01-01

NASA Langley Research Center is involved in the development of photonic devices and systems for space exploration missions. Photonic technologies of particular interest are those that can be utilized for in-space communication, remote sensing, guidance navigation and control, lunar descent and landing, and rendezvous and docking. NASA Langley has recently established a class-100 clean-room which serves as a Photonics Fabrication Facility for development of prototype optoelectronic devices for aerospace applications. In this paper we discuss our design, fabrication, and testing of novel active pixels, deformable mirrors, and liquid crystal spatial light modulators. Successful implementation of these intelligent optical devices and systems in space, requires careful consideration of temperature and space radiation effects in inorganic and electronic materials. Applications including high bandwidth inertial reference units, lightweight, high precision star trackers for guidance, navigation, and control, deformable mirrors, wavefront sensing, and beam steering technologies are discussed. In addition, experimental results are presented which characterize their performance in space exploration systems.

SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Analysis of the precision parameters of an optoelectronic vector-matrix processor of digital information

NASA Astrophysics Data System (ADS)

Odinokov, S. B.; Petrov, A. V.

1995-10-01

Mathematical models of components of a vector-matrix optoelectronic multiplier are considered. Perturbing factors influencing a real optoelectronic system — noise and errors of radiation sources and detectors, nonlinearity of an analogue—digital converter, nonideal optical systems — are taken into account. Analytic expressions are obtained for relating the precision of such a multiplier to the probability of an error amounting to one bit, to the parameters describing the quality of the multiplier components, and to the quality of the optical system of the processor. Various methods of increasing the dynamic range of a multiplier are considered at the technical systems level.

Correction factor in temperature measurements by optoelectronic systems

NASA Astrophysics Data System (ADS)

Bikberdina, N.; Yunusov, R.; Boronenko, M.; Gulyaev, P.

2017-11-01

It is often necessary to investigate high temperature fast moving microobjects. If you want to measure their temperature, use optoelectronic measuring systems. Optoelectronic systems are always calibrated over a stationary absolutely black body. One of the problems of pyrometry is that you can not use this calibration to measure the temperature of moving objects. Two solutions are proposed in [1]. This article outlines the first results of validation [2]. An experimentally justified coefficient that allows one to take into account the influence of its motion on the decrease in the video signal of the photosensor in the regime of charge accumulation. The study was partially supported by RFBR in the framework of a research project № 15-42-00106

Parallel optoelectronic trinary signed-digit division

NASA Astrophysics Data System (ADS)

Alam, Mohammad S.

1999-03-01

The trinary signed-digit (TSD) number system has been found to be very useful for parallel addition and subtraction of any arbitrary length operands in constant time. Using the TSD addition and multiplication modules as the basic building blocks, we develop an efficient algorithm for performing parallel TSD division in constant time. The proposed division technique uses one TSD subtraction and two TSD multiplication steps. An optoelectronic correlator based architecture is suggested for implementation of the proposed TSD division algorithm, which fully exploits the parallelism and high processing speed of optics. An efficient spatial encoding scheme is used to ensure better utilization of space bandwidth product of the spatial light modulators used in the optoelectronic implementation.

Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.

PubMed

Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei

2013-10-13

Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

Analysis of the frontier technology of agricultural IoT and its predication research

NASA Astrophysics Data System (ADS)

Han, Shuqing; Zhang, Jianhua; Zhu, Mengshuai; Wu, Jianzhai; Shen, Chen; Kong, Fantao

2017-09-01

Agricultural IoT (Internet of Things) develops rapidly. Nanotechnology, biotechnology and optoelectronic technology are successfully integrated into the agricultural sensor technology. Big data, cloud computing and artificial intelligence technology have also been successfully used in IoT. This paper carries out the research on integration of agricultural sensor technology, nanotechnology, biotechnology and optoelectronic technology and the application of big data, cloud computing and artificial intelligence technology in agricultural IoT. The advantages and development of the integration of nanotechnology, biotechnology and optoelectronic technology with agricultural sensor technology were discussed. The application of big data, cloud computing and artificial intelligence technology in IoT and their development trend were analysed.

Laser and Optical Fiber Metrology in Romania

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sporea, Dan; Sporea, Adelina

2008-04-15

The Romanian government established in the last five years a National Program for the improvement of country's infrastructure of metrology. The set goal was to develop and accredit testing and calibration laboratories, as well as certification bodies, according to the ISO 17025:2005 norm. Our Institute benefited from this policy, and developed a laboratory for laser and optical fibers metrology in order to provide testing and calibration services for the certification of laser-based industrial, medical and communication products. The paper will present the laboratory accredited facilities and some of the results obtained in the evaluation of irradiation effects of optical andmore » optoelectronic parts, tests run under the EU's Fusion Program.« less

An Electronic Structure Approach to Charge Transfer and Transport in Molecular Building Blocks for Organic Optoelectronics

NASA Astrophysics Data System (ADS)

Hendrickson, Heidi Phillips

A fundamental understanding of charge separation in organic materials is necessary for the rational design of optoelectronic devices suited for renewable energy applications and requires a combination of theoretical, computational, and experimental methods. Density functional theory (DFT) and time-dependent (TD)DFT are cost effective ab-initio approaches for calculating fundamental properties of large molecular systems, however conventional DFT methods have been known to fail in accurately characterizing frontier orbital gaps and charge transfer states in molecular systems. In this dissertation, these shortcomings are addressed by implementing an optimally-tuned range-separated hybrid (OT-RSH) functional approach within DFT and TDDFT. The first part of this thesis presents the way in which RSH-DFT addresses the shortcomings in conventional DFT. Environmentally-corrected RSH-DFT frontier orbital energies are shown to correspond to thin film measurements for a set of organic semiconducting molecules. Likewise, the improved RSH-TDDFT description of charge transfer excitations is benchmarked using a model ethene dimer and silsesquioxane molecules. In the second part of this thesis, RSH-DFT is applied to chromophore-functionalized silsesquioxanes, which are currently investigated as candidates for building blocks in optoelectronic applications. RSH-DFT provides insight into the nature of absorptive and emissive states in silsesquioxanes. While absorption primarily involves transitions localized on one chromophore, charge transfer between chromophores and between chromophore and silsesquioxane cage have been identified. The RSH-DFT approach, including a protocol accounting for complex environmental effects on charge transfer energies, was tested and validated against experimental measurements. The third part of this thesis addresses quantum transport through nano-scale junctions. The ability to quantify a molecular junction via spectroscopic methods is crucial to their technological design and development. Time dependent perturbation theory, employed by non-equilibrium Green's function formalism, is utilized to study the effect of quantum coherences on electron transport and the effect of symmetry breaking on the electronic spectra of model molecular junctions. The fourth part of this thesis presents the design of a physical chemistry course based on a pedagogical approach called Writing-to-Teach. The nature of inaccuracies expressed in student-generated explanations of quantum chemistry topics, and the ability of a peer review process to engage these inaccuracies, is explored within this context.

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

NASA Astrophysics Data System (ADS)

Zúñiga-Pérez, Jesús; Consonni, Vincent; Lymperakis, Liverios; Kong, Xiang; Trampert, Achim; Fernández-Garrido, Sergio; Brandt, Oliver; Renevier, Hubert; Keller, Stacia; Hestroffer, Karine; Wagner, Markus R.; Reparaz, Juan Sebastián; Akyol, Fatih; Rajan, Siddharth; Rennesson, Stéphanie; Palacios, Tomás; Feuillet, Guy

2016-12-01

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade.

Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications

NASA Astrophysics Data System (ADS)

Romeira, Bruno; Figueiredo, José M. L.; Javaloyes, Julien

2017-11-01

With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.

Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications.

PubMed

Romeira, Bruno; Figueiredo, José M L; Javaloyes, Julien

2017-11-01

With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.

Designing a porous-crystalline structure of β-Ga2O3: a potential approach to tune its opto-electronic properties.

PubMed

Banerjee, Swastika; Jiang, Xiangwei; Wang, Lin-Wang

2018-04-04

β-Ga2O3 has drawn recent attention as a state-of-the-art electronic material due to its stability, optical transparency and appealing performance in power devices. However, it has also found a wider range of opto-electronic applications including photocatalysis, especially in its porous form. For such applications, a lower band gap must be obtained and an electron-hole spatial separation would be beneficial. Like many other metal oxides (e.g. Al2O3), Ga2O3 can also form various types of porous structure. In the present study, we investigate how its optical and electronic properties can be changed in a particular porous structure with stoichiometrically balanced and extended vacancy channels. We apply a set of first principles computational methods to investigate the formation and the structural, dynamic, and opto-electronic properties. We find that such an extended vacancy channel is mechanically stable and has relatively low formation energy. We also find that this results in a spatial separation of the electron and hole, forming a long-lived charge transfer state that has desirable characteristics for a photocatalyst. In addition, the electronic band gap reduces to the vis-region unlike the transparency in the pure β-Ga2O3 crystal. Thus, our systematic study is promising for the application of such a porous structure of β-Ga2O3 as a versatile electronic material.

Resonant infrared laser deposition of polymer-nanocomposite materials for optoelectronic applications

NASA Astrophysics Data System (ADS)

Park, Hee K.; Schriver, Kenneth E.; Haglund, Richard F.

2011-11-01

Polymers find a number of potentially useful applications in optoelectronic devices. These include both active layers, such as light-emitting polymers and hole-transport layers, and passive layers, such as polymer barrier coatings and light-management films. This paper reports the experimental results for polymer films deposited by resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) and resonant infrared pulsed laser deposition (RIR-PLD) for commercial optoelectronic device applications. In particular, light-management films, such as anti-reflection coatings, require refractive-index engineering of a material. However, refractive indices of polymers fall within a relatively narrow range, leading to major efforts to develop both low- and high-refractive-index polymers. Polymer nanocomposites can expand the range of refractive indices by incorporating low- or high-refractive-index nanoscale materials. RIR-MAPLE is an excellent technique for depositing polymer-nanocomposite films in multilayer structures, which are essential to light-management coatings. In this paper, we report our efforts to engineer the refractive index of a barrier polymer by combining RIR-MAPLE of nanomaterials (for example, high refractive-index TiO2 nanoparticles) and RIR-PLD of host polymer. In addition, we report on the properties of organic and polymer films deposited by RIR-MAPLE and/or RIR-PLD, such as Alq3 [tris(8-hydroxyquinoline) aluminum] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)]. Finally, the challenges and potential for commercializing RIR-MAPLE/PLD, such as industrial scale-up issues, are discussed.

Quantum Engineering of States in Heterostructure-based Detectors for Enhance Performance

DTIC Science & Technology

2017-05-26

excited carrier contribution in these heterostructure- based photodetectors has been reduced by using phonon-assisted transitions to design structures ...experimental investigations of nanostructure- based electronic and optoelectronic structures with the goal of facilitating major improvements in the performance...nanostructures. Quantum engineering of nano- structures is emphasized. Related quantum- based structures – including those with spontaneous polarizations are

Enhancement of sun-tracking with optoelectronic devices

NASA Astrophysics Data System (ADS)

Wu, Jiunn-Chi

2015-09-01

Sun-tracking is one of the most challenging tasks in implementing CPV. In order to justify the additional complexity of sun-tracking, careful assessment of performance of CPV by monitoring the performance of sun-tracking is vital. Measurement of accuracy of sun-tracking is one of the important tasks in an outdoor test. This study examines techniques with three optoelectronic devices (i.e. position sensitive device (PSD), CCD and webcam). Outdoor measurements indicated that during sunny days (global horizontal insolation (GHI) > 700 W/m2), three devices recorded comparable tracking accuracy of 0.16˜0.3°. The method using a PSD has fastest sampling rate and is able to detect the sun's position without additional image processing. Yet, it cannot identify the sunlight effectively during low insolation. The techniques with a CCD and a webcam enhance the accuracy of centroid of sunlight via the optical lens and image processing. The image quality acquired using a webcam and a CCD is comparable but the webcam is more affordable than that of CCD because it can be assembled with consumer-graded products.

A Dual-Loop Opto-Electronic Oscillator

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, L.; Ji, Y.; Lutes, G.; Tu, M.

1998-07-01

We describe and demonstrate a multiloop technique for single-mode selection in an opto-electronic oscillator (OEO). We present experimental results of a dual-loop OEO free running at 10 GHz that has the lowest phase noise (-140 dBc/Hz at 10 kHz from the carrier) of all free-running room-temperature oscillators to date.

Optoelectronic Integration

DTIC Science & Technology

1992-03-20

34 Interband Transitions in InGaAs/GaAs Strained Layer Superlattices ," J. of Vac. Sci and Technol. B, Vol. 7(5), pp. 1106-1110, 1989. 33 B. Kh...2 II. C. Resonant Cavity-Enhanced Photodetectors ................................ .............. 3 II. D. Wavelength Selective Optoelectronic...Simultions of Electronic States in Semiconductor Quantum Wells and Superlattices under Electrical Field ................................ ....... 5 II. G . G

Functionalized polyfluorenes for use in optoelectronic devices

DOEpatents

Chichak, Kelly Scott [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY

2011-11-01

The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

The Use of Opto-Electronics in Viscometry.

ERIC Educational Resources Information Center

Mazza, R. J.; Washbourn, D. H.

1982-01-01

Describes a semi-automatic viscometer which incorporates a microprocessor system and uses optoelectronics to detect flow of liquid through the capillary, flow time being displayed on a timer with accuracy of 0.01 second. The system could be made fully automatic with an additional microprocessor circuit and inclusion of a pump. (Author/JN)

Organic photosensitive devices

DOEpatents

Rand, Barry P; Forrest, Stephen R

2013-11-26

The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.

Optoelectronic interconnects for 3D wafer stacks

NASA Astrophysics Data System (ADS)

Ludwig, David E.; Carson, John C.; Lome, Louis S.

1996-01-01

Wafer and chip stacking are envisioned as a means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper provides definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies are discussed.

Optoelectronic interconnects for 3D wafer stacks

NASA Astrophysics Data System (ADS)

Ludwig, David; Carson, John C.; Lome, Louis S.

1996-01-01

Wafer and chip stacking are envisioned as means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper will provide definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies will be discussed.

Deterministic growth of AgTCNQ and CuTCNQ nanowires on large-area reduced graphene oxide films for flexible optoelectronics.

PubMed

Zhang, Shuai; Lu, Zhufeng; Gu, Li; Cai, Liling; Cao, Xuebo

2013-11-22

We describe a synchronous reduction and assembly procedure to directly produce large-area reduced graphene oxide (rGO) films sandwiched by a high density of metal nanoparticles (silver and copper). Further, by using the sandwiched metal NPs as sources, networks consisting of AgTCNQ and CuTCNQ nanowires were deterministically grown from the rGO films, forming structurally and functionally integrated rGO/metal-TCNQ hybrid films with outstanding flexibility, bending endurance, and electrical stability. Interestingly, due to the p-type nature of the rGO film and the n-type nature of the metal-TCNQ NWs, the hybrid films are essentially thin-film p-n junctions which are useful in ubiquitous electronics and optoelectronics. Measurements of the optoelectronic properties demonstrate that the rGO/metal-TCNQ hybrid films exhibit substantial photoconductivity and highly reproducible photoswitching behaviours. The present approach may open the door to the versatile and deterministic integration of functional nanostructures into flexible conducting substrates and provide an important step towards producing low-cost and high-performance soft electronic and optoelectronic devices.

Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics.

PubMed

Wang, Gongming; Li, Dehui; Cheng, Hung-Chieh; Li, Yongjia; Chen, Chih-Yen; Yin, Anxiang; Zhao, Zipeng; Lin, Zhaoyang; Wu, Hao; He, Qiyuan; Ding, Mengning; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2015-10-01

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.

Direct anisotropic growth of CdS nanocrystals in thermotropic liquid crystal templates for heterojunction optoelectronics.

PubMed

Yuan, Kai; Chen, Lie; Chen, Yiwang

2014-09-01

The direct growth of CdS nanocrystals in functional solid-state thermotropic liquid crystal (LC) small molecules and a conjugated LC polymer by in situ thermal decomposition of a single-source cadmium xanthate precursor to fabricate LC/CdS hybrid nanocomposites is described. The influence of thermal annealing temperature of the LC/CdS precursors upon the nanomorphology, photophysics, and optoelectronic properties of the LC/CdS nanocomposites is systematically studied. Steady-state PL and ultrafast emission dynamics studies show that the charge-transfer rates are strongly dependent on the thermal annealing temperature. Notably, annealing at liquid-crystal state temperature promotes a more organized nanomorphology of the LC/CdS nanocomposites with improved photophysics and optoelectronic properties. The results confirm that thermotropic LCs can be ideal candidates as organization templates for the control of organic/inorganic hybrid nanocomposites at the nanoscale level. The results also demonstrate that in situ growth of semiconducting nanocrystals in thermotropic LCs is a versatile route to hybrid organic/inorganic nanocomposites and optoelectronic devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical surface analysis: a new technique for the inspection and metrology of optoelectronic films and wafers

NASA Astrophysics Data System (ADS)

Bechtler, Laurie; Velidandla, Vamsi

2003-04-01

In response to demand for higher volumes and greater product capability, integrated optoelectronic device processing is rapidly increasing in complexity, benefiting from techniques developed for conventional silicon integrated circuit processing. The needs for high product yield and low manufacturing cost are also similar to the silicon wafer processing industry. This paper discusses the design and use of an automated inspection instrument called the Optical Surface Analyzer (OSA) to evaluate two critical production issues in optoelectronic device manufacturing: (1) film thickness uniformity, and (2) defectivity at various process steps. The OSA measurement instrument is better suited to photonics process development than most equipment developed for conventional silicon wafer processing in two important ways: it can handle both transparent and opaque substrates (unlike most inspection and metrology tools), and it is a full-wafer inspection method that captures defects and film variations over the entire substrate surface (unlike most film thickness measurement tools). Measurement examples will be provided in the paper for a variety of films and substrates used for optoelectronics manufacturing.

Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

PubMed Central

Wang, Gongming; Li, Dehui; Cheng, Hung-Chieh; Li, Yongjia; Chen, Chih-Yen; Yin, Anxiang; Zhao, Zipeng; Lin, Zhaoyang; Wu, Hao; He, Qiyuan; Ding, Mengning; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2015-01-01

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems. PMID:26601297

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

PubMed

Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

2017-12-04

High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

Patterning of conjugated polymers for organic optoelectronic devices.

PubMed

Xu, Youyong; Zhang, Fan; Feng, Xinliang

2011-05-23

Conjugated polymers have been attracting more and more attention because they possess various novel electrical, magnetical, and optical properties, which render them useful in modern organic optoelectronic devices. Due to their organic nature, conjugated polymers are light-weight and can be fabricated into flexible appliances. Significant research efforts have been devoted to developing new organic materials to make them competitive with their conventional inorganic counterparts. It is foreseeable that when large-scale industrial manufacture of the devices made from organic conjugated polymers is feasible, they would be much cheaper and have more functions. On one hand, in order to improve the performance of organic optoelectronic devices, it is essential to tune their surface morphologies by techniques such as patterning. On the other hand, patterning is the routine requirement for device processing. In this review, the recent progress in the patterning of conjugated polymers for high-performance optoelectronic devices is summarized. Patterning based on the bottom-up and top-down methods are introduced. Emerging new patterning strategies and future trends for conventional patterning techniques are discussed. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Two-Dimensional CH₃NH₃PbI₃ Perovskite: Synthesis and Optoelectronic Application.

PubMed

Liu, Jingying; Xue, Yunzhou; Wang, Ziyu; Xu, Zai-Quan; Zheng, Changxi; Weber, Bent; Song, Jingchao; Wang, Yusheng; Lu, Yuerui; Zhang, Yupeng; Bao, Qiaoliang

2016-03-22

Hybrid organic-inorganic perovskite materials have received substantial research attention due to their impressively high performance in photovoltaic devices. As one of the oldest functional materials, it is intriguing to explore the optoelectronic properties in perovskite after reducing it into a few atomic layers in which two-dimensional (2D) confinement may get involved. In this work, we report a combined solution process and vapor-phase conversion method to synthesize 2D hybrid organic-inorganic perovskite (i.e., CH3NH3PbI3) nanocrystals as thin as a single unit cell (∼1.3 nm). High-quality 2D perovskite crystals have triangle and hexagonal shapes, exhibiting tunable photoluminescence while the thickness or composition is changed. Due to the high quantum efficiency and excellent photoelectric properties in 2D perovskites, a high-performance photodetector was demonstrated, in which the current can be enhanced significantly by shining 405 and 532 nm lasers, showing photoresponsivities of 22 and 12 AW(-1) with a voltage bias of 1 V, respectively. The excellent optoelectronic properties make 2D perovskites building blocks to construct 2D heterostructures for wider optoelectronic applications.

Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

DOE PAGES

Wang, Gongming; Li, Dehui; Cheng, Hung -Chieh; ...

2015-10-02

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that themore » resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. Furthermore, the ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.« less

``Effect of Polyalkylthiophene Microstructure on Physical and Optoelectronic Properties''

NASA Astrophysics Data System (ADS)

Minkler, Michael J., Jr.; Beckingham, Bryan S.

Conjugated polymers have been of widespread interest as flexible semiconductors for organic electronic devices such as solar cells, field effect transistor,s and light-emitting diodes. Of particular interest have been alkyl-substituted polythiophenes due to their well-controlled synthesis, favorable optoelectronic properties, and solubility in organic solvents. Importantly, relatively small changes to the chemical microstructure in poly(3-alkylthiophenes) (P3ATs) can have a significant effect on the resulting physical and optoelectronic properties. For instance, the addition of aliphatic side chains onto unsubstituted polythiophene provides solubility but also greatly decreases conductivity in comparison to unsubstituted polythiophene (PT). In this work, we use Grignard metathesis polymerization to synthesize poly(3-hexylthiophene) (P3HT), PT, and statistical copolymers (P[3HT-co-T]) over a range of compositions. We examine the physical properties (melting temperature, crystallinity, etc) by differential scanning calorimetry and wide angle X-ray scattering, optoelectronic properties by UV/Vis spectroscopy, and solubility in organic solvents of these copolymers in order to gain insights into the interplay of microstructure and properties in this class of materials.

Integrated bio-fluorescence sensor.

PubMed

Thrush, Evan; Levi, Ofer; Ha, Wonill; Wang, Ke; Smith, Stephen J; Harris, James S

2003-09-26

Due to the recent explosion in optoelectronics for telecommunication applications, novel optoelectronic sensing structures can now be realized. In this work, we explore the integration of optoelectronic components towards miniature and portable fluorescence sensors. The integration of these micro-fabricated sensors with microfluidics and capillary networks may reduce the cost and complexity of current research instruments and open up a world of new applications in portable biological analysis systems. A novel optoelectronic design that capitalizes on current vertical-cavity surface-emitting laser (VCSEL) technology is explored. Specifically, VCSELs, optical emission filters and PIN photodetectors are fabricated as part of a monolithically integrated near-infrared fluorescence detection system. High-performance lasers and photodetectors have been characterized and integrated to form a complete sensor. Experimental results show that sensor sensitivity is limited by laser background. The laser background is caused by spontaneous emission emitted from the side of the VCSEL excitation source. Laser background will limit sensitivity in most integrated sensing designs due to locating excitation sources and photodetectors in such close proximity, and methods are proposed to reduce the laser background in such designs so that practical fluorescent detection limits can be achieved.

Optoelectronic-cache memory system architecture.

PubMed

Chiarulli, D M; Levitan, S P

1996-05-10

We present an investigation of the architecture of an optoelectronic cache that can integrate terabit optical memories with the electronic caches associated with high-performance uniprocessors and multiprocessors. The use of optoelectronic-cache memories enables these terabit technologies to provide transparently low-latency secondary memory with frame sizes comparable with disk pages but with latencies that approach those of electronic secondary-cache memories. This enables the implementation of terabit memories with effective access times comparable with the cycle times of current microprocessors. The cache design is based on the use of a smart-pixel array and combines parallel free-space optical input-output to-and-from optical memory with conventional electronic communication to the processor caches. This cache and the optical memory system to which it will interface provide a large random-access memory space that has a lower overall latency than that of magnetic disks and disk arrays. In addition, as a consequence of the high-bandwidth parallel input-output capabilities of optical memories, fault service times for the optoelectronic cache are substantially less than those currently achievable with any rotational media.

Ultrasonic imaging using optoelectronic transmitters.

PubMed

Emery, C D; Casey, H C; Smith, S W

1998-04-01

Conventional ultrasound scanners utilize electronic transmitters and receivers at the scanner with a separate coaxial cable connected to each transducer element in the handle. The number of transducer elements determines the size and weight of the transducer cable assembly that connects the imaging array to the scanner. 2-D arrays that allow new imaging modalities to be introduced significantly increase the channel count making the transducer cable assembly more difficult to handle. Therefore, reducing the size and increasing the flexibility of the transducer cable assembly is a concern. Fiber optics can be used to transmit signals optically and has distinct advantages over standard coaxial cable to increase flexibility and decrease the weight of the transducer cable for larger channel numbers. The use of fiber optics to connect the array and the scanner entails the use of optoelectronics such as detectors and laser diodes to send and receive signals. In transmit, optoelectronics would have to be designed to produce high-voltage wide-bandwidth pulses across the transducer element. In this paper, we describe a 48 channel ultrasound system having 16 optoelectronic transmitters and 32 conventional electronic receivers. We investigated both silicon avalanche photodiodes (APD's) and GaAs lateral photoconductive semiconductor switches (PCSS's) for producing the transmit pulses. A Siemens SI-1200 scanner and a 2.25 MHz linear array were used to compare the optoelectronic system to a conventional electronic transmit system. Transmit signal results and images in tissue mimicking of cysts and tumors are provided for comparison.

Two different ways for waveguides and optoelectronics components on top of C-MOS

NASA Astrophysics Data System (ADS)

Fedeli, J. M.; Jeannot, S.; Kostrzewa, M.; Di Cioccio, L.; Jousseaume, V.; Orobtchouk, R.; Maury, P.; Zussy, M.

2006-02-01

While fabrication of photonic components at the wafer level is a long standing goal of integrated optics, new applications such as optical interconnects are introducing new challenges for waveguides and optoelectronic component fabrication. Indeed, global interconnects are expected to face severe limitations in the near future. To face this problem, optical links on top of a CMOS circuits could be an alternative. The critical points to perform an optical link on a chip are firstly the realization of compact passive optical distribution and secondly the report of optoelectronic components for the sources and detectors. This paper presents two different approaches for the integration of both waveguides and optoelectronic components. In a first "total bonding" approach, waveguides have been elaborated using classical "Silicon On Insulators" technology and then reported using molecular bonding on top off Si wafers. The S0I substrate was then chemically etched, after what InP dies were moleculary bonded on top of the waveguides. With this approach, optical components with low loses and a good equilibrium are demonsrated. Using molecular bonding, InP dies were reported with no degradation of the optoelectronic properties of the films. In a second approach, using PECVD silicon nitride or amorphous silicon coupled to PECVD silicon oxide, basic optical components are demonstrated. This low temperature technology is compatible with a microelectronic Back End process, allowing an integration of the waveguides directly on top of CMOS circuits. InP dies can then be bonded on top of the waveguides.

Multi-material optoelectronic fiber devices

NASA Astrophysics Data System (ADS)

Sorin, F.; Yan, Wei; Volpi, Marco; Page, Alexis G.; Nguyen Dang, Tung; Qu, Y.

2017-05-01

The recent ability to integrate materials with different optical and optoelectronic properties in prescribed architectures within flexible fibers is enabling novel opportunities for advanced optical probes, functional surfaces and smart textiles. In particular, the thermal drawing process has known a series of breakthroughs in recent years that have expanded the range of materials and architectures that can be engineered within uniform fibers. Of particular interest in this presentation will be optoelectronic fibers that integrate semiconductors electrically addressed by conducting materials. These long, thin and flexible fibers can intercept optical radiation, localize and inform on a beam direction, detect its wavelength and even harness its energy. They hence constitute ideal candidates for applications such as remote and distributed sensing, large-area optical-detection arrays, energy harvesting and storage, innovative health care solutions, and functional fabrics. To improve performance and device complexity, tremendous progresses have been made in terms of the integrated semiconductor architectures, evolving from large fiber solid-core, to sub-hundred nanometer thin-films, nano-filaments and even nanospheres. To bridge the gap between the optoelectronic fiber concept and practical applications however, we still need to improve device performance and integration. In this presentation we will describe the materials and processing approaches to realize optoelectronic fibers, as well as give a few examples of demonstrated systems for imaging as well as light and chemical sensing. We will then discuss paths towards practical applications focusing on two main points: fiber connectivity, and improving the semiconductor microstructure by developing scalable approaches to make fiber-integrated single-crystal nanowire based devices.

Collecting Kinematic Data on a Ski Track with Optoelectronic Stereophotogrammetry: A Methodological Study Assessing the Feasibility of Bringing the Biomechanics Lab to the Field.

PubMed

Spörri, Jörg; Schiefermüller, Christian; Müller, Erich

2016-01-01

In the laboratory, optoelectronic stereophotogrammetry is one of the most commonly used motion capture systems; particularly, when position- or orientation-related analyses of human movements are intended. However, for many applied research questions, field experiments are indispensable, and it is not a priori clear whether optoelectronic stereophotogrammetric systems can be expected to perform similarly to in-lab experiments. This study aimed to assess the instrumental errors of kinematic data collected on a ski track using optoelectronic stereophotogrammetry, and to investigate the magnitudes of additional skiing-specific errors and soft tissue/suit artifacts. During a field experiment, the kinematic data of different static and dynamic tasks were captured by the use of 24 infrared-cameras. The distances between three passive markers attached to a rigid bar were stereophotogrammetrically reconstructed and, subsequently, were compared to the manufacturer-specified exact values. While at rest or skiing at low speed, the optoelectronic stereophotogrammetric system's accuracy and precision for determining inter-marker distances were found to be comparable to those known for in-lab experiments (< 1 mm). However, when measuring a skier's kinematics under "typical" skiing conditions (i.e., high speeds, inclined/angulated postures and moderate snow spraying), additional errors were found to occur for distances between equipment-fixed markers (total measurement errors: 2.3 ± 2.2 mm). Moreover, for distances between skin-fixed markers, such as the anterior hip markers, additional artifacts were observed (total measurement errors: 8.3 ± 7.1 mm). In summary, these values can be considered sufficient for the detection of meaningful position- or orientation-related differences in alpine skiing. However, it must be emphasized that the use of optoelectronic stereophotogrammetry on a ski track is seriously constrained by limited practical usability, small-sized capture volumes and the occurrence of extensive snow spraying (which results in marker obscuration). The latter limitation possibly might be overcome by the use of more sophisticated cluster-based marker sets.

Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices (Second year of three year progress report)

DTIC Science & Technology

2014-10-01

properties in Army-relevant semiconductor materials and optoelectronic ( OE ) devices by developing and applying ultrafast optical spectroscopy techniques...met our Q6 through Q8 goals of incorporating electrical testing capabilities into our system, investigating OE devices under operating conditions...extending the capabilities of our system into the IR range, and investigating new OE devices. We have made significant progress towards our Q5 goal of

Integrated optical circuit engineering IV; Proceedings of the Meeting, Cambridge, MA, Sept. 16, 17, 1986

NASA Astrophysics Data System (ADS)

Mentzer, Mark A.; Sriram, S.

The design and implementation of integrated optical circuits are discussed in reviews and reports. Topics addressed include lithium niobate devices, silicon integrated optics, waveguide phenomena, coupling considerations, processing technology, nonlinear guided-wave optics, integrated optics for fiber systems, and systems considerations and applications. Also included are eight papers and a panel discussion from an SPIE conference on the processing of guided-wave optoelectronic materials (held in Los Angeles, CA, on January 21-22, 1986).

Organic photosensitive devices using subphthalocyanine compounds

DOEpatents

Rand, Barry [Princeton, NJ; Forrest, Stephen R [Ann Arbor, MI; Mutolo, Kristin L [Hollywood, CA; Mayo, Elizabeth [Alhambra, CA; Thompson, Mark E [Anaheim Hills, CA

2011-07-05

An organic photosensitive optoelectronic device, having a donor-acceptor heterojunction of a donor-like material and an acceptor-like material and methods of making such devices is provided. At least one of the donor-like material and the acceptor-like material includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound; and/or the device optionally has at least one of a blocking layer or a charge transport layer, where the blocking layer and/or the charge transport layer includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound.

Printed photodetectors

NASA Astrophysics Data System (ADS)

Pace, Giuseppina; Grimoldi, Andrea; Sampietro, Marco; Natali, Dario; Caironi, Mario

2015-10-01

Photodetectors convert light pulses into electrical signals and are fundamental building blocks for any opto-electronic system adopting light as a probe or information carrier. They have widespread technological applications, from telecommunications to sensors in industrial, medical and civil environments. Further opportunities are plastic short-range communications systems, interactive large-area surfaces and light-weight, flexible, digital imagers. These applications would greatly benefit from the cost-effective fabrication processes enabled by printing technology. While organic semiconductors are the most investigated materials for printed photodetectors, and are the main focus of the present review, there are notable examples of other inorganic or hybrid printable semiconductors for opto-electronic systems, such as quantum-dots and nanowires. Here we propose an overview on printed photodetectors, including three-terminal phototransistors. We first give a brief account of the working mechanism of these light sensitive devices, and then we review the recent progress achieved with scalable printing techniques such as screen-printing, inkjet and other non-contact technologies in the development of all-printed or hybrid systems.

Extreme Light Management in Mesoporous Wood Cellulose Paper for Optoelectronics.

PubMed

Zhu, Hongli; Fang, Zhiqiang; Wang, Zhu; Dai, Jiaqi; Yao, Yonggang; Shen, Fei; Preston, Colin; Wu, Wenxin; Peng, Peng; Jang, Nathaniel; Yu, Qingkai; Yu, Zongfu; Hu, Liangbing

2016-01-26

Wood fibers possess natural unique hierarchical and mesoporous structures that enable a variety of new applications beyond their traditional use. We dramatically modulate the propagation of light through random network of wood fibers. A highly transparent and clear paper with transmittance >90% and haze <1.0% applicable for high-definition displays is achieved. By altering the morphology of the same wood fibers that form the paper, highly transparent and hazy paper targeted for other applications such as solar cell and antiglare coating with transmittance >90% and haze >90% is also achieved. A thorough investigation of the relation between the mesoporous structure and the optical properties in transparent paper was conducted, including full-spectrum optical simulations. We demonstrate commercially competitive multitouch touch screen with clear paper as a replacement for plastic substrates, which shows excellent process compatibility and comparable device performance for commercial applications. Transparent cellulose paper with tunable optical properties is an emerging photonic material that will realize a range of much improved flexible electronics, photonics, and optoelectronics.

Multi-Gbit/s optical phase chaos communications using a time-delayed optoelectronic oscillator with a three-wave interferometer nonlinearity.

PubMed

Oden, Jérémy; Lavrov, Roman; Chembo, Yanne K; Larger, Laurent

2017-11-01

We propose a chaos communication scheme based on a chaotic optical phase carrier generated with an optoelectronic oscillator with nonlinear time-delay feedback. The system includes a dedicated non-local nonlinearity, which is a customized three-wave imbalanced interferometer. This particular feature increases the complexity of the chaotic waveform and thus the security of the transmitted information, as these interferometers are characterized by four independent parameters which are part of the secret key for the chaos encryption scheme. We first analyze the route to chaos in the system, and evidence a sequence of period doubling bifurcations from the steady-state to fully developed chaos. Then, in the chaotic regime, we study the synchronization between the emitter and the receiver, and achieve chaotic carrier cancellation with a signal-to-noise ratio up to 20 dB. We finally demonstrate error-free chaos communications at a data rate of 3 Gbit/s.

Understanding the Unique Properties of Organometal Trihalide Perovskite with Single Crystals

NASA Astrophysics Data System (ADS)

Huang, Jinsong

Organometal Trihalide Perovskite has been discovered to be all-round optoelectronic materials many types of electronic devices. The understanding of this family of materials is however limited yet due to the complicated grain structures in polycrystalline films which are generally used in most of the devices. In this contribution, I will present our recent progress in understanding the fundamental properties, including optoelectronic properties and electromechanical properties, using the high quality organometal trihalide perovskite single crystals. I will report the crystallographic orientation dependent charge transport and collection, surface and bulk charge recombination process, and direction measuring of carrier diffusion length using the lasing induced photocurrent scanning. The polarity of the organometal trihalide perovskite crystals will also be examined. We thank financial support from SunShot Initiative at Department of Energy under Award DE-EE0006709, and from National Science Foundation Grant DMR-1505535 and Grant DMR-1420645, and from Office of Naval Research under Award N00014-15-1-2713.

Software for Use with Optoelectronic Measuring Tool

NASA Technical Reports Server (NTRS)

Ballard, Kim C.

2004-01-01

A computer program has been written to facilitate and accelerate the process of measurement by use of the apparatus described in "Optoelectronic Tool Adds Scale Marks to Photographic Images" (KSC-12201). The tool contains four laser diodes that generate parallel beams of light spaced apart at a known distance. The beams of light are used to project bright spots that serve as scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The computer program is applicable to a scene that contains the laser spots and that has been imaged in a square pixel format that can be imported into a graphical user interface (GUI) generated by the program. It is assumed that the laser spots and the distance(s) to be measured all lie in the same plane and that the plane is perpendicular to the line of sight of the camera used to record the image

Advanced interdisciplinary undergraduate program: light engineering

NASA Astrophysics Data System (ADS)

Bakholdin, Alexey; Bougrov, Vladislav; Voznesenskaya, Anna; Ezhova, Kseniia

2016-09-01

The undergraduate educational program "Light Engineering" of an advanced level of studies is focused on development of scientific learning outcomes and training of professionals, whose activities are in the interdisciplinary fields of Optical engineering and Technical physics. The program gives practical experience in transmission, reception, storage, processing and displaying information using opto-electronic devices, automation of optical systems design, computer image modeling, automated quality control and characterization of optical devices. The program is implemented in accordance with Educational standards of the ITMO University. The specific features of the Program is practice- and problem-based learning implemented by engaging students to perform research and projects, internships at the enterprises and in leading Russian and international research educational centers. The modular structure of the Program and a significant proportion of variable disciplines provide the concept of individual learning for each student. Learning outcomes of the program's graduates include theoretical knowledge and skills in natural science and core professional disciplines, deep knowledge of modern computer technologies, research expertise, design skills, optical and optoelectronic systems and devices.

Nanoforging Single Layer MoSe 2 Through Defect Engineering with Focused Helium Ion Beams

DOE PAGES

Iberi, Vighter; Liang, Liangbo; Ievlev, Anton V.; ...

2016-08-02

Development of devices and structures based on the layered 2D materials critically hinges on the capability to induce, control, and tailor the electronic, transport, and optoelectronic properties via defect engineering, much like doping strategies have enabled semiconductor electronics and forging enabled introduction of iron age. Here, we demonstrate the use of a scanning helium ion microscope (HIM) for tailoring the functionality of single layer MoSe 2 locally, and decipher associated mechanisms at atomic level. We demonstrate He + beam bombardment that locally creates vacancies, shifts the Fermi energy landscape and thereby increases the Young s modulus of elasticity. Furthermore, wemore » observe for the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at room temperature. In conclusion, the approach for precise defect engineering demonstrated here opens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable properties that include operating in the visible region.« less

Nanoforging Single Layer MoSe 2 Through Defect Engineering with Focused Helium Ion Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iberi, Vighter; Liang, Liangbo; Ievlev, Anton V.

Development of devices and structures based on the layered 2D materials critically hinges on the capability to induce, control, and tailor the electronic, transport, and optoelectronic properties via defect engineering, much like doping strategies have enabled semiconductor electronics and forging enabled introduction of iron age. Here, we demonstrate the use of a scanning helium ion microscope (HIM) for tailoring the functionality of single layer MoSe 2 locally, and decipher associated mechanisms at atomic level. We demonstrate He + beam bombardment that locally creates vacancies, shifts the Fermi energy landscape and thereby increases the Young s modulus of elasticity. Furthermore, wemore » observe for the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at room temperature. In conclusion, the approach for precise defect engineering demonstrated here opens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable properties that include operating in the visible region.« less

Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams

NASA Astrophysics Data System (ADS)

Iberi, Vighter; Liang, Liangbo; Ievlev, Anton V.; Stanford, Michael G.; Lin, Ming-Wei; Li, Xufan; Mahjouri-Samani, Masoud; Jesse, Stephen; Sumpter, Bobby G.; Kalinin, Sergei V.; Joy, David C.; Xiao, Kai; Belianinov, Alex; Ovchinnikova, Olga S.

2016-08-01

Development of devices and structures based on the layered 2D materials critically hinges on the capability to induce, control, and tailor the electronic, transport, and optoelectronic properties via defect engineering, much like doping strategies have enabled semiconductor electronics and forging enabled introduction the of iron age. Here, we demonstrate the use of a scanning helium ion microscope (HIM) for tailoring the functionality of single layer MoSe2 locally, and decipher associated mechanisms at the atomic level. We demonstrate He+ beam bombardment that locally creates vacancies, shifts the Fermi energy landscape and increases the Young’s modulus of elasticity. Furthermore, we observe for the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at the room temperature. The approach for precise defect engineering demonstrated here opens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable properties that include operating in the visible region.

Intelligent fiber optic sensor for solution concentration examination

NASA Astrophysics Data System (ADS)

Borecki, Michal; Kruszewski, Jerzy

2003-09-01

This paper presents the working principles of intelligent fiber-optic intensity sensor used for solution concentration examination. The sensor head is the ending of the large core polymer optical fiber. The head works on the reflection intensity basis. The reflected signal level depends on Fresnel reflection and reflection on suspended matter when the head is submersed in solution. The sensor head is mounted on a lift. For detection purposes the signal includes head submerging, submersion, emerging and emergence is measured. This way the viscosity turbidity and refraction coefficient has an effect on measured signal. The signal forthcoming from head is processed electrically in opto-electronic interface. Then it is feed to neural network. The novelty of presented sensor is implementation of neural network that works in generalization mode. The sensor resolution depends on opto-electronic signal conversion precision and neural network learning accuracy. Therefore, the number and quality of points used for learning process is very important. The example sensor application for examination of liquid soap concentration in water is presented in the paper.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohite, Aditya; Blancon, Jean-Christophe

In the eternal search for next generation high-efficiency solar cells and LEDs, scientists at Los Alamos National Laboratory and their partners are gaining an extra degree of freedom in designing and fabricating efficient optoelectronic devices based on 2D layered hybrid perovskites. Industrial applications could include low cost solar cells, LEDs, laser diodes, detectors, and other nano-optoelectronic devices. The 2D, near-single-crystalline “Ruddlesden-Popper” thin films have an out-of-plane orientation so that uninhibited charge transport occurs through the perovskite layers in planar devices. The new research finds the existence of “layer-edge-states” at the edges of the perovskite layers which are key to bothmore » high efficiency of solar cells (greater than 12 percent) and high fluorescence efficiency (a few tens of percent) for LEDs. The spontaneous conversion of excitons (bound electron-hole pairs) to free carriers via these layer-edge states appears to be the key to the improvement of the photovoltaic and light-emitting thin film layered materials.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matz, Dallas L.; Schalnat, Matthew C.; Pemberton, Jeanne E.

The reaction between small organic molecules and low work function metals is of interest in organometallic, astronomical, and optoelectronic device chemistry. Here, thin, solid-state, amorphous benzene and pyridine films are reacted with Ca at 30 K under ultrahigh vacuum with the reaction progress monitored by Raman spectroscopy. Although both films react with Ca to produce product species identifiable by their vibrational spectroscopic signatures, benzene is less reactive with Ca than pyridine. Benzene reacts by electron transfer from Ca to benzene producing multiple species including the phenyl radical anion, the phenyl radical, and the benzyne diradical. Pyridine initially reacts along amore » similar electron transfer pathway as indicated by the presence of the corresponding pyridyl radical and pyridyne diradical species, but these pyridyl radicals are less stable and subject to further ring-opening reactions that lead to a complex array of smaller molecule reaction products and ultimately amorphous carbon. The elucidation of this reaction pathway provides insight into the reactions of aromatics with Ca that are relevant in the areas of catalysis, astrochemistry, and organic optoelectronics.« less

The impact of semiconductor, electronics and optoelectronic industries on downstream perfluorinated chemical contamination in Taiwanese rivers.

PubMed

Lin, Angela Yu-Chen; Panchangam, Sri Chandana; Lo, Chao-Chun

2009-04-01

This study provides the first evidence on the influence of the semiconductor and electronics industries on perfluorinated chemicals (PFCs) contamination in receiving rivers. We have quantified ten PFCs, including perfluoroalkyl sulfonates (PFASs: PFBS, PFHxS, PFOS) and perfluoroalkyl carboxylates (PFCAs: PFHxA, PFHpA, PFOA, PFNA, PFDA, PFUnA, PFDoA) in semiconductor, electronic, and optoelectronic industrial wastewaters and their receiving water bodies (Taiwan's Keya, Touchien, and Xiaoli rivers). PFOS was found to be the major constituent in semiconductor wastewaters (up to 0.13 mg/L). However, different PFC distributions were found in electronics plant wastewaters; PFOA was the most significant PFC, contributing on average 72% to the effluent water samples, followed by PFOS (16%) and PFDA (9%). The distribution of PFCs in the receiving rivers was greatly impacted by industrial sources. PFOS, PFOA and PFDA were predominant and prevalent in all the river samples, with PFOS detected at the highest concentrations (up to 5.4 microg/L).

Multi-Gbit/s optical phase chaos communications using a time-delayed optoelectronic oscillator with a three-wave interferometer nonlinearity

NASA Astrophysics Data System (ADS)

Oden, Jérémy; Lavrov, Roman; Chembo, Yanne K.; Larger, Laurent

2017-11-01

We propose a chaos communication scheme based on a chaotic optical phase carrier generated with an optoelectronic oscillator with nonlinear time-delay feedback. The system includes a dedicated non-local nonlinearity, which is a customized three-wave imbalanced interferometer. This particular feature increases the complexity of the chaotic waveform and thus the security of the transmitted information, as these interferometers are characterized by four independent parameters which are part of the secret key for the chaos encryption scheme. We first analyze the route to chaos in the system, and evidence a sequence of period doubling bifurcations from the steady-state to fully developed chaos. Then, in the chaotic regime, we study the synchronization between the emitter and the receiver, and achieve chaotic carrier cancellation with a signal-to-noise ratio up to 20 dB. We finally demonstrate error-free chaos communications at a data rate of 3 Gbit/s.

Intersatellite communications optoelectronics research at the Goddard Space Flight Center

NASA Technical Reports Server (NTRS)

Krainak, Michael A.

1992-01-01

A review is presented of current optoelectronics research and development at the NASA Goddard Space Flight Center for high-power, high-bandwidth laser transmitters; high-bandwidth, high-sensitivity optical receivers; pointing, acquisition, and tracking components; and experimental and theoretical system modeling at the NASA Goddard Space Flight Center. Program hardware and space flight opportunities are presented.

Synchronization of oscillations in coupled multimode optoelectronic oscillators: bifurcation analysis

NASA Astrophysics Data System (ADS)

Balakin, M.; Gulyaev, A.; Kazaryan, A.; Yarovoy, O.

2018-04-01

We study influence of time delay in coupling on the dynamics of two coupled multimode optoelectronic oscillators. We reveal the structure of main synchronization region on the parameter plane and main bifurcations leading to synchronization and multistability formation. The dynamics of the system is studied in a wide range of values of control parameters.

Optoelectronic fuzzy associative memory with controllable attraction basin sizes

NASA Astrophysics Data System (ADS)

Wen, Zhiqing; Campbell, Scott; Wu, Weishu; Yeh, Pochi

1995-10-01

We propose and demonstrate a new fuzzy associative memory model that provides an option to control the sizes of the attraction basins in neural networks. In our optoelectronic implementation we use spatial/polarization encoding to represent the fuzzy variables. Shadow casting of the encoded patterns is employed to yield the fuzzy-absolute difference between fuzzy variables.

Magnetometer Based on the Opto-Electronic Oscillator

NASA Technical Reports Server (NTRS)

Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute

2005-01-01

We theoretically propose and discuss properties of two schemes of an all-optical self-oscillating magnetometer based on an opto-electronic oscillator stabilized with an atomic vapor cell. Proof of the principle DC magnetic field measurements characterized with 2 x 10(exp -7) G sensitivity and 1 - 1000 mG dynamic range in one of the schemes are demonstrated.

Chip-to-chip interconnects based on 3D stacking of optoelectrical dies on Si

NASA Astrophysics Data System (ADS)

Duan, P.; Raz, O.; Smalbrugge, B. E.; Duis, J.; Dorren, H. J. S.

2012-01-01

We demonstrate a new approach to increase the optical interconnection bandwidth density by stacking the opto-electrical dies directly on the CMOS driver. The suggested implementation is aiming to provide a wafer scale process which will make the use of wire bonding redundant and will allow for impedance matched metallic wiring between the electronic driving circuit and its opto-electronic counter part. We suggest the use of a thick photoresist ramp between CMOS driver and opto-electrical dies surface as the bridge for supporting co-plannar waveguides (CPW) electrically plated with lithographic accuracy. In this way all three dimensions of the interconnecting metal layer, width, length and thickness can be completely controlled. In this 1st demonstration all processing is done on commercially available devices and products, and is compatible with CMOS processing technology. To test the applicability of CPW instead of wire bonds for interconnecting the CMOS circuit and opto-electronic chips, we have made test samples and tested their performance at speeds up to 10 Gbps. In this demonstration, a silicon substrate was used on which we evaporated gold co-planar waveguides (CPW) to mimic a wire on the driver. An optical link consisting of a VCSEL chip and a photodiode chip has been assembled and fully characterized using optical coupling into and out of a multimode fiber (MMF). A 10 Gb/s 27-1 NRZ PRBS signal transmitted from one chip to another chip was detected error free. A 4 dB receiver sensitivity penalty is measured for the integrated device compared to a commercial link.

Fabrication of lateral electrodes on semiconductor nanowires through structurally matched insulation for functional optoelectronics.

PubMed

Sheng, Yun; Sun, Huabin; Wang, Jianyu; Gao, Fan; Wang, Junzhuan; Pan, Lijia; Pu, Lin; Zheng, Youdou; Shi, Yi

2013-01-18

A strategy of using structurally matched alumina insulation to produce lateral electrodes on semiconductor nanowires is presented. Nanowires in the architecture are structurally matched with alumina insulation using selective anodic oxidation. Lateral electrodes are fabricated by directly evaporating metallic atoms onto the opposite sides of the nanowires. The integrated architecture with lateral electrodes propels carriers to transport them across nanowires and is crucially beneficial to the injection/extraction in optoelectronics. The matched architecture and the insulating properties of the alumina layer are investigated experimentally. ZnO nanowires are functionalized into an ultraviolet photodiode as an example. The present strategy successfully implements an advantageous architecture and is significant in developing diverse semiconductor nanowires in optoelectronic applications.

A full-duplex working integrated optoelectronic device for optical interconnect

NASA Astrophysics Data System (ADS)

Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

2018-05-01

In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

Absorption and Emission of Light in Optoelectronic Nanomaterials: The Role of the Local Optical Environment.

PubMed

Jiménez-Solano, Alberto; Galisteo-López, Juan F; Míguez, Hernán

2018-04-19

Tailoring the interaction of electromagnetic radiation with matter is central to the development of optoelectronic devices. This becomes particularly relevant for a new generation of devices offering the possibility of solution processing with competitive efficiencies as well as new functionalities. These devices, containing novel materials such as inorganic colloidal quantum dots or hybrid organic-inorganic lead halide perovskites, commonly demand thin (tens of nanometers) active layers in order to perform optimally and thus maximizing the way electromagnetic radiation interacts with these layers is essential. In this Perspective, we discuss the relevance of tailoring the optical environment of the active layer in an optoelectronic device and illustrate it with two real-world systems comprising photovoltaic cells and light emitting devices.

NASA Tech Briefs, January 2003

NASA Technical Reports Server (NTRS)

2003-01-01

Topics covered include: Optoelectronic Tool Adds Scale Marks to Photographic Images; Compact Interconnection Networks Based on Quantum Dots; Laterally Coupled Quantum-Dot Distributed-Feedback Lasers; Bit-Serial Adder Based on Quantum Dots; Stabilized Fiber-Optic Distribution of Reference Frequency; Delay/Doppler-Mapping GPS-Reflection Remote-Sensing System; Ladar System Identifies Obstacles Partly Hidden by Grass; Survivable Failure Data Recorders for Spacecraft; Fiber-Optic Ammonia Sensors; Silicon Membrane Mirrors with Electrostatic Shape Actuators; Nanoscale Hot-Wire Probes for Boundary-Layer Flows; Theodolite with CCD Camera for Safe Measurement of Laser-Beam Pointing; Efficient Coupling of Lasers to Telescopes with Obscuration; Aligning Three Off-Axis Mirrors with Help of a DOE; Calibrating Laser Gas Measurements by Use of Natural CO2; Laser Ranging Simulation Program; Micro-Ball-Lens Optical Switch Driven by SMA Actuator; Evaluation of Charge Storage and Decay in Spacecraft Insulators; Alkaline Capacitors Based on Nitride Nanoparticles; Low-EC-Content Electrolytes for Low-Temperature Li-Ion Cells; Software for a GPS-Reflection Remote-Sensing System; Software for Building Models of 3D Objects via the Internet; "Virtual Cockpit Window" for a Windowless Aerospacecraft; CLARAty Functional-Layer Software; Java Library for Input and Output of Image Data and Metadata; Software for Estimating Costs of Testing Rocket Engines; Energy-Absorbing, Lightweight Wheels; Viscoelastic Vibration Dampers for Turbomachine Blades; Soft Landing of Spacecraft on Energy-Absorbing Self-Deployable Cushions; Pneumatically Actuated Miniature Peristaltic Vacuum Pumps; Miniature Gas-Turbine Power Generator; Pressure-Sensor Assembly Technique; Wafer-Level Membrane-Transfer Process for Fabricating MEMS; A Reactive-Ion Etch for Patterning Piezoelectric Thin Film; Wavelet-Based Real-Time Diagnosis of Complex Systems; Quantum Search in Hilbert Space; Analytic Method for Computing Instrument Pointing Jitter; and Semiselective Optoelectronic Sensors for Monitoring Microbes.

Phase I - Final report: Improved position sensitive detectors for thermal neutrons. Design, fabrication, and results of testing the Phase I - Proof-of-Principal Improved Position Sensitive Thermal Neutron Detector Prototype in the laboratory and at the Intense Pulsed Neutron Source (IPNS), Argonne National Laboratory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hull, Carter D.

A position sensitive neutron detector was designed and fabricated with bundles of individual detector elements with diameters of 120 mm. These neutron scintillating fibers were coupled with optoelectronic arrays to produce a ''Fiber Detector.'' A fiber position sensitive detector was completed and tested with scattered and thermal neutrons. Deployment of improved 2D PSDs with high signal to noise ratios at lower costs per area was the overall objective of the project.

Encryption key distribution via chaos synchronization

PubMed Central

Keuninckx, Lars; Soriano, Miguel C.; Fischer, Ingo; Mirasso, Claudio R.; Nguimdo, Romain M.; Van der Sande, Guy

2017-01-01

We present a novel encryption scheme, wherein an encryption key is generated by two distant complex nonlinear units, forced into synchronization by a chaotic driver. The concept is sufficiently generic to be implemented on either photonic, optoelectronic or electronic platforms. The method for generating the key bitstream from the chaotic signals is reconfigurable. Although derived from a deterministic process, the obtained bit series fulfill the randomness conditions as defined by the National Institute of Standards test suite. We demonstrate the feasibility of our concept on an electronic delay oscillator circuit and test the robustness against attacks using a state-of-the-art system identification method. PMID:28233876

Center for Opto-Electronic Systems Research.

DTIC Science & Technology

1988-02-01

Stroud, Jr. The Institute of Optics, University of Rochester Rochester, New York 14627 USA Abstract The Jaynes - Cummings model of a single two-level...surfaces, possibly to include certain classes of surfaces without rotational symmetry. An initial investigation was made of the surface roughness...number density of approximately 1018 - and the forward-going pump wave both enter the nonlinear -.molecules/cm3 . The intensities of the interacting

Wireless infrared communications for space and terrestrial applications

NASA Technical Reports Server (NTRS)

Crimmins, James W.

1993-01-01

Voice and data communications via wireless (and fiberless) optical means has been commonplace for many years. However, continuous advances in optoelectronics and microelectronics have resulted in significant advances in wireless optical communications over the last decade. Wilton has specialized in diffuse infrared voice and data communications since 1979. In 1986, NASA Johnson Space Center invited Wilton to apply its wireless telecommunications and factory floor technology to astronaut voice communications aboard the shuttle. In September, 1988 a special infrared voice communications system flew aboard a 'Discovery' Shuttle mission as a flight experiment. Since then the technology has been further developed, resulting in a general purpose of 2Mbs wireless voice/data LAN which has been tested for a variety of applications including use aboard Spacelab. Funds for Wilton's wireless IR development were provided in part by NASA's Technology Utilization Office and by the NASA Small Business Innovative Research Program. As a consequence, Wilton's commercial product capability has been significantly enhanced to include diffuse infrared wireless LAN's as well as wireless infrared telecommunication systems for voice and data.

Control of the hierarchical assembly of π-conjugated optoelectronic peptides by pH and flow

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mansbach, Rachael A.; Ferguson, Andrew L.

Self-assembled nanoaggregates of p-conjugated peptides possess optoelectronic properties due to electron delocalization over the conjugated peptide groups that make them attractive candidates for the fabrication of bioelectronic materials. We present a computational and theoretical study to resolve the microscopic effects of pH and flow on the non-equilibrium morphology and kinetics of early-stage assembly of an experimentally-realizable optoelectronic peptide that displays pH triggerable assembly. Employing coarse-grained molecular dynamics simulations, we probe the effects of pH on growth kinetics and aggregate morphology to show that control of the peptide protonation state by pH can be used to modulate the assembly rates, degreemore » of molecular alignment, and resulting morphologies within the self-assembling nanoaggregates. We also quantify the time and length scales at which convective flows employed in directed assembly compete with microscopic diffusion to show that flow influences cluster alignment and assembly rate during early-stage assembly only at extremely high shear rates. This suggests that observed improvements in optoelectronic properties at experimentally-accessible shear rates are due to the alignment of large aggregates of hundreds of monomers on time scales in excess of hundreds of nanoseconds. Lastly, our work provides new fundamental understanding of the effects of pH and flow to control the morphology and kinetics of early-stage assembly of p-conjugated peptides and lays the groundwork for the rational manipulation of environmental conditions to direct assembly and the attendant emergent optoelectronic properties.« less

Control of the hierarchical assembly of π-conjugated optoelectronic peptides by pH and flow

DOE PAGES

Mansbach, Rachael A.; Ferguson, Andrew L.

2017-01-01

Self-assembled nanoaggregates of p-conjugated peptides possess optoelectronic properties due to electron delocalization over the conjugated peptide groups that make them attractive candidates for the fabrication of bioelectronic materials. We present a computational and theoretical study to resolve the microscopic effects of pH and flow on the non-equilibrium morphology and kinetics of early-stage assembly of an experimentally-realizable optoelectronic peptide that displays pH triggerable assembly. Employing coarse-grained molecular dynamics simulations, we probe the effects of pH on growth kinetics and aggregate morphology to show that control of the peptide protonation state by pH can be used to modulate the assembly rates, degreemore » of molecular alignment, and resulting morphologies within the self-assembling nanoaggregates. We also quantify the time and length scales at which convective flows employed in directed assembly compete with microscopic diffusion to show that flow influences cluster alignment and assembly rate during early-stage assembly only at extremely high shear rates. This suggests that observed improvements in optoelectronic properties at experimentally-accessible shear rates are due to the alignment of large aggregates of hundreds of monomers on time scales in excess of hundreds of nanoseconds. Lastly, our work provides new fundamental understanding of the effects of pH and flow to control the morphology and kinetics of early-stage assembly of p-conjugated peptides and lays the groundwork for the rational manipulation of environmental conditions to direct assembly and the attendant emergent optoelectronic properties.« less

Dopantless Diodes for Efficient Mid/deep UV LEDs and Lasers - Topic 4.2 Optoelectronics

DTIC Science & Technology

2017-09-12

Week, Santa Barbara, CA, “Polarization hole engineering in deep- ultraviolet nanowire LEDs”, ATM Sarwar, Santino Carnevale, Thomas Kent, Brelon May...Electronic Materials Conference, Santa Barbara, California, “ Engineering the polarization hole doping of graded nanowire ultraviolet LEDs integrated on...Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering Publication Type: Thesis or Dissertation

Preface to Special Issue of ChemSusChem on Perovskite Optoelectronics.

PubMed

Bolink, Henk J; Mhaisalkar, Subodh G

2017-10-09

This Editorial introduces one of two companion Special Issues on "Halide Perovskites for Optoelectronics Applications" in ChemSusChem and Energy Technology following the ICMAT 2017 Conference in Singapore. More information on the other Special Issue can be found in the Editorial published in Energy Technology. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stabilizing an optoelectronic microwave oscillator with photonic filters

NASA Technical Reports Server (NTRS)

Strekalov, D.; Aveline, D.; Yu, N.; Thompson, R.; Matsko, A. B.; Maleki, L.

2003-01-01

This paper compares methods of active stabilization of an optoelectronic microwave oscillator (OEO) based on insertion of a source of optical group delay into an OEO loop. The performance of an OEO stabilized with either a high- optical cavity or an atomic cell is analyzed. We show that the elements play a role of narrow-band microwave filters improving an OEO stability.

Ultrathin (<1 μm) Substrate-Free Flexible Photodetector on Quantum Dot-Nanocellulose Paper

PubMed Central

Wu, Jingda; Lin, Lih Y.

2017-01-01

Conventional approaches to flexible optoelectronic devices typically require depositing the active materials on external substrates. This is mostly due to the weak bonding between individual molecules or nanocrystals in the active materials, which prevents sustaining a freestanding thin film. Herein we demonstrate an ultrathin freestanding ZnO quantum dot (QD) active layer with nanocellulose structuring, and its corresponding device fabrication method to achieve substrate-free flexible optoelectronic devices. The ultrathin ZnO QD-nanocellulose composite is obtained by hydrogel transfer printing and solvent-exchange processes to overcome the water capillary force which is detrimental to achieving freestanding thin films. We achieved an active nanocellulose paper with ~550 nm thickness, and >91% transparency in the visible wavelength range. The film retains the photoconductive and photoluminescent properties of ZnO QDs and is applied towards substrate-free Schottky photodetector applications. The device has an overall thickness of ~670 nm, which is the thinnest freestanding optoelectronic device to date, to the best of our knowledge, and functions as a self-powered visible-blind ultraviolet photodetector. This platform can be readily applied to other nano materials as well as other optoelectronic device applications. PMID:28266651

Optoelectronic Devices, Sensors, Communication and Multimedia, Photonics Applications and Web Engineering, Wilga, May 2012

NASA Astrophysics Data System (ADS)

Romaniuk, Ryszard S.

2012-05-01

This paper is the fourth part (out of five) of the research survey of WILGA Symposium work, May 2012 Edition, concerned with Optoelectronic Devices, Sensors, Communication and Multimedia (Video and Audio) technologies. It presents a digest of chosen technical work results shown by young researchers from different technical universities from this country during the Jubilee XXXth SPIE-IEEE Wilga 2012, May Edition, symposium on Photonics and Web Engineering. Topical tracks of the symposium embraced, among others, nanomaterials and nanotechnologies for photonics, sensory and nonlinear optical fibers, object oriented design of hardware, photonic metrology, optoelectronics and photonics applications, photonics-electronics co-design, optoelectronic and electronic systems for astronomy and high energy physics experiments, JET tokamak and pi-of-the sky experiments development. The symposium is an annual summary in the development of numerable Ph.D. theses carried out in this country in the area of advanced electronic and photonic systems. It is also a great occasion for SPIE, IEEE, OSA and PSP students to meet together in a large group spanning the whole country with guests from this part of Europe. A digest of Wilga references is presented [1-270].

Filterless low-phase-noise frequency-quadrupled microwave generation based on a multimode optoelectronic oscillator

NASA Astrophysics Data System (ADS)

Teng, Yichao; Zhang, Pin; Zhang, Baofu; Chen, Yiwang

2018-02-01

A scheme to realize low-phase-noise frequency-quadrupled microwave generation without any filter is demonstrated. In this scheme, a multimode optoelectronic oscillator is mainly contributed by dual-parallel Mach-Zehnder modulators, fiber, photodetector, and microwave amplifier. The local source signal is modulated by a child MZM (MZMa), which is worked at maximum transmission point. Through properly adjusting the bias voltages of the other child MZM (MZMb) and the parent MZM (MZMc), optical carrier is effectively suppressed and second sidebands are retained, then the survived optical signal is fed back to the photodetector and MZMb to form an optoelectronic hybrid resonator and realize frequency-quadrupled signal generation. Due to the high Q-factor and mode selection effect of the optoelectronic hybrid resonator, compared with the source signal, the generated frequency-quadrupled signal has a lower phase noise. The approach has verified by experiments, and 18, 22, and 26 GHz frequency-quadrupled signal are generated by 4.5, 5.5, and 6.5 GHz local source signals. Compared with 4.5 GHz source signal, the phase noise of generated 18 GHz signal at 10 kHz frequency offset has 26.5 dB reduction.

Optoelectronics for electrical and computer engineering students

NASA Astrophysics Data System (ADS)

Chua, Soo-Jin; Jalil, Mansoor

2002-05-01

We describe the contents of an advanced undergraduate course on Optoelectronics at the Department of Electrical and Computer Engineering, National University of Singapore. The emphasis has changed over the years to keep abreast of the development in the field but the broad features remain the same. A multidisciplinary approach is taken, incorporating physics, materials science and engineering concepts to explain the operation of optoelectronic components, and their application in display, communications and consumer electronics. The course comprises of 36 hours of lectures and two experiments, and covers basic radiometry and photometry, photoemitters (LEDs and lasers), photodetectors, and liquid crystal displays. The main aim of the course is to equip the student with the requisite theoretical and practical knowledge for participation in the photonics industry and for postgraduate research for students who are so inclined.

2.49 GHz low phase-noise optoelectronic oscillator using 1.55μm VCSEL for avionics and aerospace applications

NASA Astrophysics Data System (ADS)

Hayat, Ahmad; Bacou, Alexandre; Rissons, Angelique; Mollier, Jean-Claude

2009-02-01

We present here a 1.55 μm single mode Vertical-Cavity Surface-Emitting Laser (VCSEL) based low phasenoise ring optoelectronic (OEO) oscillator operating at 2.49 GHz for aerospace, avionics and embedded systems applications. Experiments using optical fibers of different lengths have been carried out to obtain optimal results. A phase-noise measurement of -107 dBc/Hz at an offset of 10 kHz from the carrier is obtained. A 3-dB linewidth of 16 Hz for this oscillator signal has been measured. An analysis of lateral mode spacing or Free Spectral Range (FSR) as a function of fiber length has been carried out. A parametric comparison with DFB Laser-based and multimode VCSEL-based opto-electronic oscillators is also presented.

Optical modeling based on mean free path calculations for quantum dot phosphors applied to optoelectronic devices.

PubMed

Shin, Min-Ho; Kim, Hyo-Jun; Kim, Young-Joo

2017-02-20

We proposed an optical simulation model for the quantum dot (QD) nanophosphor based on the mean free path concept to understand precisely the optical performance of optoelectronic devices. A measurement methodology was also developed to get the desired optical characteristics such as the mean free path and absorption spectra for QD nanophosphors which are to be incorporated into the simulation. The simulation results for QD-based white LED and OLED displays show good agreement with the experimental values from the fabricated devices in terms of spectral power distribution, chromaticity coordinate, CCT, and CRI. The proposed simulation model and measurement methodology can be applied easily to the design of lots of optoelectronics devices using QD nanophosphors to obtain high efficiency and the desired color characteristics.

Limitation of Liquid Crystal on Silicon Spatial Light Modular for Holographic Three-dimensional Displays

NASA Technical Reports Server (NTRS)

Wang, Xinghua; Wang, Bin; Bos, Philip J.; Anderson, James E.; Kujawinska, Malgorzata; Pouch, John; Miranda, Feliz

2004-01-01

In a 3-D display system based on an opto-electronic reconstruction of a digitally recorded hologram, the field of view of such a system is limited by the spatial resolution of the liquid crystal on silicon (LCOS) spatial light modular (SLM) used to perform the opto-electronic reconstruction. In this article, the special resolution limitation of LCOS SLM associated with the fringe field effect and interpixel coupling is determined by the liquid crystal detector simulation and the Finite Difference Time Domain (FDTD) simulation. The diffraction efficiency loss associated with the imperfection in the phase profile is studied with an example of opto-electronic reconstruction of an amplitude object. A high spatial resolution LCOS SLM with a wide reconstruction angle is proposed.

InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

NASA Technical Reports Server (NTRS)

Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

1995-01-01

A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

A Self-Synchronized Optoelectronic Oscillator based on an RTD Photo-Detector and a Laser Diode

PubMed Central

Romeira, Bruno; Seunarine, Kris; Ironside, Charles N.; Kelly, Anthony E.; Figueiredo, José M. L.

2013-01-01

We propose and demonstrate a simple and stable low-phase noise optoelectronic oscillator (OEO) that uses a laser diode, an optical fiber delay line and a resonant tunneling diode (RTD) free-running oscillator that is monolithic integrated with a waveguide photo-detector. The RTD-OEO exhibits single-side band phase noise power below −100 dBc/Hz with more than 30 dB noise suppression at 10 kHz from the center free-running frequency for fiber loop lengths around 1.2 km. The oscillator power consumption is below 0.55 W, and can be controlled either by the injected optical power or the fiber delay line. The RTD-OEO stability is achieved without using other high-speed optical/optoelectronic components and amplification. PMID:23814452

Highly luminescent colloidal nanoplates of perovskite cesium lead halide and their oriented assemblies

DOE PAGES

Bekenstein, Yehonadav; Koscher, Brent A.; Eaton, Samuel W.; ...

2015-12-15

Anisotropic colloidal quasi-two-dimensional nanoplates (NPLs) hold great promise as functional materials due to their combination of low dimensional optoelectronic properties and versatility through colloidal synthesis. Recently, lead-halide perovskites have emerged as important optoelectronic materials with excellent efficiencies in photovoltaic and light-emitting applications. Here we report the synthesis of quantum confined all inorganic cesium lead halide nanoplates in the perovskite crystal structure that are also highly luminescent (PLQY 84%). The controllable self-assembly of nanoplates either into stacked columnar phases or crystallographic-oriented thin-sheet structures is demonstrated. Furthermore, the broad accessible emission range, high native quantum yields, and ease of self-assembly make perovskitemore » NPLs an ideal platform for fundamental optoelectronic studies and the investigation of future devices.« less

Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices

NASA Astrophysics Data System (ADS)

Higurashi, Eiji

2018-04-01

Heterogeneous integration is an attractive approach to manufacturing future optoelectronic devices. Recent progress in low-temperature bonding techniques such as plasma activation bonding (PAB) and surface-activated bonding (SAB) enables a new approach to integrating dissimilar materials for a wide range of photonics applications. In this paper, low-temperature direct bonding and intermediate layer bonding techniques are focused, and their state-of-the-art applications in optoelectronic devices are reviewed. First, we describe the room-temperature direct bonding of Ge/Ge and Ge/Si wafers for photodetectors and of GaAs/SiC wafers for high-power semiconductor lasers. Then, we describe low-temperature intermediate layer bonding using Au and lead-free Sn-3.0Ag-0.5Cu solders for optical sensors and MEMS packaging.

Tuning of the Morphology and Optoelectronic Properties of ZnO/P3HT/P3HT- b-PEO Hybrid Films via Spray Deposition Method.

PubMed

Wang, Kun; Bießmann, Lorenz; Schwartzkopf, Matthias; Roth, Stephan V; Müller-Buschbaum, Peter

2018-06-20

The self-assembly of amphiphilic diblock copolymers yields the possibility of using them as a template for tailoring the film morphologies of sol-gel chemistry-derived inorganic electron transport materials, such as mesoporous ZnO and TiO 2 . However, additional steps including etching and backfilling are required for the common bulk heterojunction fabrication process when using insulating diblock copolymers. Here, we use the conducting diblock copolymer poly(3-hexylthiophene)- block-poly(ethylene oxide) (P3HT- b-PEO) in which P3HT acts as charge carrier transport material and light absorber, whereas PEO serves as a template for ZnO synthesis. The initial solution is subsequently spray-coated to obtain the hybrid film. Scanning electron microscopy and grazing-incidence small-angle X-ray scattering measurements reveal a significant change in the morphology of the hybrid films during deposition. Optoelectronic properties illustrate the improved charge separation and charge transfer process. Both the amount of the diblock copolymer and the annealing temperature play an important role in tuning the morphology and the optoelectronic properties. Hybrid films being sprayed from a solution with the ratio of ω ZnO , ω P3HT , and ω P3HT- b-PEO of 2:1:1 and subsequent annealing at 80 °C show the most promising morphology combined with an optimal photoluminescence quenching. Thus, the presented simple, reagent- and energy-saving fabrication method provides a promising approach for a large-scale preparation of bulk heterojunction P3HT/ZnO films on flexible substrates.

Novel laser communications transceiver with internal gimbal-less pointing and tracking

NASA Astrophysics Data System (ADS)

Chalfant, Charles H., III; Orlando, Fred J., Jr.; Gregory, Jeff T.; Sulham, Clifford; O'Neal, Chad B.; Taylor, Geoffrey W.; Craig, Douglas M.; Foshee, James J.; Lovett, J. Timothy

2002-12-01

This paper describes a novel laser communications transceiver for use in multi-platform satellite networks or clusters that provides internal pointing and tracking technique allowing static mounting of the transceiver subsystems and minimal use of mechanical stabilization techniques. This eliminates the need for the large, power hungry, mechanical gimbals that are required for laser cross-link pointing, acquisition and tracking. The miniature transceiver is designed for pointing accuracies required for satellite cross-link distances of between 500 meters to 5000 meters. Specifically, the designs are targeting Air Force Research Lab's TechSat21 Program, although alternative transceiver configurations can provide for much greater link distances and other satellite systems. The receiver and transmitter are connected via fiber optic cabling from a separate electronics subsystem containing the optoelectronics PCBs, thereby eliminating active optoelectronic elements from the transceiver's mechanical housing. The internal acquisition and tracking capability is provided by an advanced micro-electro-mechanical system (MEMS) and an optical design that provides a specific field-of-view based on the satellite cluster's interface specifications. The acquisition & tracking control electronics will utilize conventional closed loop tracking techniques. The link optical power budget and optoelectronics designs allow use of transmitter sources with output powers of near 100 mW. The transceiver will provide data rates of up to 2.5 Gbps and operate at either 1310 nm or 1550 nm. In addition to space-based satellite to satellite cross-links, we are planning to develop a broad range of applications including air to air communications between highly mobile airborne platforms and terrestrial fixed point to point communications.

Self-assembled III-V quantum dots: potential for silicon optoelectronics

NASA Technical Reports Server (NTRS)

Leon, R.

2001-01-01

The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.

Developing Topological Insulator Fiber Based Photon Pairs Source for Ultrafast Optoelectronic Applications

DTIC Science & Technology

2016-04-01

DEVELOPING TOPOLOGICAL INSULATOR FIBER BASED PHOTON PAIRS SOURCE FOR ULTRAFAST OPTOELECTRONIC APPLICATIONS NORTHWESTERN UNIVERSITY...REPORT TYPE FINAL TECHNICAL REPORT 3. DATES COVERED (From - To) APRIL 2015 – DEC 2015 4. TITLE AND SUBTITLE DEVELOPING TOPOLOGICAL INSULATOR FIBER BASED...in developing a new source for the production of correlated/entangled photon pairs based on the unique nanolayer properties of topological insulator

Successful development of first-generation laser device; marking China's optoelectronic technology at world class level

NASA Astrophysics Data System (ADS)

1995-04-01

Bell Laboratories has developed the world's first optical information processor. Its core device is a self-excited electrooptical effect apparatus array of symmetric operation. After being developed in the United States, this high-technology device was successfully developed by China's scientists,thus making the fact that China's optoelectronic technology is among the most advanced in the world.

Phased-Array Antenna With Optoelectronic Control Circuits

NASA Technical Reports Server (NTRS)

Kunath, Richard R.; Shalkhauser, Kurt A.; Martzaklis, Konstantinos; Lee, Richard Q.; Downey, Alan N.; Simons, Rainee N.

1995-01-01

Prototype phased-array antenna features control of amplitude and phase at each radiating element. Amplitude- and phase-control signals transmitted on optical fiber to optoelectronic interface circuit (OEIC), then to monolithic microwave integrated circuit (MMIC) at each element. Offers advantages of flexible, rapid electronic steering and shaping of beams. Furthermore, greater number of elements, less overall performance of antenna degraded by malfunction in single element.

Collecting Kinematic Data on a Ski Track with Optoelectronic Stereophotogrammetry: A Methodological Study Assessing the Feasibility of Bringing the Biomechanics Lab to the Field

PubMed Central

Müller, Erich

2016-01-01

In the laboratory, optoelectronic stereophotogrammetry is one of the most commonly used motion capture systems; particularly, when position- or orientation-related analyses of human movements are intended. However, for many applied research questions, field experiments are indispensable, and it is not a priori clear whether optoelectronic stereophotogrammetric systems can be expected to perform similarly to in-lab experiments. This study aimed to assess the instrumental errors of kinematic data collected on a ski track using optoelectronic stereophotogrammetry, and to investigate the magnitudes of additional skiing-specific errors and soft tissue/suit artifacts. During a field experiment, the kinematic data of different static and dynamic tasks were captured by the use of 24 infrared-cameras. The distances between three passive markers attached to a rigid bar were stereophotogrammetrically reconstructed and, subsequently, were compared to the manufacturer-specified exact values. While at rest or skiing at low speed, the optoelectronic stereophotogrammetric system’s accuracy and precision for determining inter-marker distances were found to be comparable to those known for in-lab experiments (< 1 mm). However, when measuring a skier’s kinematics under “typical” skiing conditions (i.e., high speeds, inclined/angulated postures and moderate snow spraying), additional errors were found to occur for distances between equipment-fixed markers (total measurement errors: 2.3 ± 2.2 mm). Moreover, for distances between skin-fixed markers, such as the anterior hip markers, additional artifacts were observed (total measurement errors: 8.3 ± 7.1 mm). In summary, these values can be considered sufficient for the detection of meaningful position- or orientation-related differences in alpine skiing. However, it must be emphasized that the use of optoelectronic stereophotogrammetry on a ski track is seriously constrained by limited practical usability, small-sized capture volumes and the occurrence of extensive snow spraying (which results in marker obscuration). The latter limitation possibly might be overcome by the use of more sophisticated cluster-based marker sets. PMID:27560498

Quantum Transport and Optoelectronics in Gapped Graphene Nanodevices

DTIC Science & Technology

2016-11-30

profile publications, including two papers in Science[1, 2], two in Nature Physics[3, 4], two in Nature Nanotechnology [5, 6], two in Nature Communications...The above results have been published in Science [1]and Nature Nanotechnology [6]. Continuing this line of work, we performed a systematic...constituent layers in van der Waals heterostructures. This work was published in Nature Nanotechnology [5]. Figure 3. Real-space imaging of

OPTOELECTRONICS, FIBER OPTICS, AND OTHER ASPECTS OF QUANTUM ELECTRONICS: Nonlinear optical devices: basic elements of a future optical digital computer?

NASA Astrophysics Data System (ADS)

Fischer, R.; Müller, R.

1989-08-01

It is shown that nonlinear optical devices are the most promising elements for an optical digital supercomputer. The basic characteristics of various developed nonlinear elements are presented, including bistable Fabry-Perot etalons, interference filters, self-electrooptic effect devices, quantum-well devices utilizing transitions between the lowest electron states in the conduction band of GaAs, etc.

Limitations of opto-electronic neural networks

NASA Technical Reports Server (NTRS)

Yu, Jeffrey; Johnston, Alan; Psaltis, Demetri; Brady, David

1989-01-01

Consideration is given to the limitations of implementing neurons, weights, and connections in neural networks for electronics and optics. It is shown that the advantages of each technology are utilized when electronically fabricated neurons are included and a combination of optics and electronics are employed for the weights and connections. The relationship between the types of neural networks being constructed and the choice of technologies to implement the weights and connections is examined.

Argon dye photocoagulator for microsurgery of the interior structure of the eye

NASA Astrophysics Data System (ADS)

Wolinski, Wieslaw L.; Kazmirowski, Antoni; Kesik, Jerzy; Korobowicz, Witold; Spytkowski, Wojciech

1991-08-01

Argon-dye laser photocoagulator for the microsurgery of the interior structure of the eye is described. Some technical specifications like power stability shape of the spots and the dependence of the power on the tissue vs. wavelenght for dye laser are given. Argon-dye photocoagulator was designed and constructed including argon laser tube and dye laser in Institute of Microelectronics and Optoelectronics Technical University of Warsaw.

Analysis And Control System For Automated Welding

NASA Technical Reports Server (NTRS)

Powell, Bradley W.; Burroughs, Ivan A.; Kennedy, Larry Z.; Rodgers, Michael H.; Goode, K. Wayne

1994-01-01

Automated variable-polarity plasma arc (VPPA) welding apparatus operates under electronic supervision by welding analysis and control system. System performs all major monitoring and controlling functions. It acquires, analyzes, and displays weld-quality data in real time and adjusts process parameters accordingly. Also records pertinent data for use in post-weld analysis and documentation of quality. System includes optoelectronic sensors and data processors that provide feedback control of welding process.

Work Function Engineering of Graphene

PubMed Central

Garg, Rajni; Dutta, Naba K.; Roy Choudhury, Namita

2014-01-01

Graphene is a two dimensional one atom thick allotrope of carbon that displays unusual crystal structure, electronic characteristics, charge transport behavior, optical clarity, physical & mechanical properties, thermal conductivity and much more that is yet to be discovered. Consequently, it has generated unprecedented excitement in the scientific community; and is of great interest to wide ranging industries including semiconductor, optoelectronics and printed electronics. Graphene is considered to be a next-generation conducting material with a remarkable band-gap structure, and has the potential to replace traditional electrode materials in optoelectronic devices. It has also been identified as one of the most promising materials for post-silicon electronics. For many such applications, modulation of the electrical and optical properties, together with tuning the band gap and the resulting work function of zero band gap graphene are critical in achieving the desired properties and outcome. In understanding the importance, a number of strategies including various functionalization, doping and hybridization have recently been identified and explored to successfully alter the work function of graphene. In this review we primarily highlight the different ways of surface modification, which have been used to specifically modify the band gap of graphene and its work function. This article focuses on the most recent perspectives, current trends and gives some indication of future challenges and possibilities. PMID:28344223

Passive and electro-optic polymer photonics and InP electronics integration

NASA Astrophysics Data System (ADS)

Zhang, Z.; Katopodis, V.; Groumas, P.; Konczykowska, A.; Dupuy, J.-.; Beretta, A.; Dede, A.; Miller, E.; Choi, J. H.; Harati, P.; Jorge, F.; Nodjiadjim, V.; Dinu, R.; Cangini, G.; Vannucci, A.; Felipe, D.; Maese-Novo, A.; Keil, N.; Bach, H.-.; Schell, Martin; Avramopoulos, H.; Kouloumentas, Ch.

2015-05-01

Hybrid photonic integration allows individual components to be developed at their best-suited material platforms without sacrificing the overall performance. In the past few years a polymer-enabled hybrid integration platform has been established, comprising 1) EO polymers for constructing low-complexity and low-cost Mach-Zehnder modulators (MZMs) with extremely high modulation bandwidth; 2) InP components for light sources, detectors, and high-speed electronics including MUX drivers and DEMUX circuits; 3) Ceramic (AIN) RF board that links the electronic signals within the package. On this platform, advanced optoelectronic modules have been demonstrated, including serial 100 Gb/s [1] and 2x100 Gb/s [2] optical transmitters, but also 400 Gb/s optoelectronic interfaces for intra-data center networks [3]. To expand the device functionalities to an unprecedented level and at the same time improve the integration compatibility with diversified active / passive photonic components, we have added a passive polymer-based photonic board (polyboard) as the 4th material system. This passive polyboard allows for low-cost fabrication of single-mode waveguide networks, enables fast and convenient integration of various thin-film elements (TFEs) to control the light polarization, and provides efficient thermo-optic elements (TOEs) for wavelength tuning, light amplitude regulation and light-path switching.

Work Function Engineering of Graphene.

PubMed

Garg, Rajni; Dutta, Naba K; Choudhury, Namita Roy

2014-04-03

Graphene is a two dimensional one atom thick allotrope of carbon that displays unusual crystal structure, electronic characteristics, charge transport behavior, optical clarity, physical & mechanical properties, thermal conductivity and much more that is yet to be discovered. Consequently, it has generated unprecedented excitement in the scientific community; and is of great interest to wide ranging industries including semiconductor, optoelectronics and printed electronics. Graphene is considered to be a next-generation conducting material with a remarkable band-gap structure, and has the potential to replace traditional electrode materials in optoelectronic devices. It has also been identified as one of the most promising materials for post-silicon electronics. For many such applications, modulation of the electrical and optical properties, together with tuning the band gap and the resulting work function of zero band gap graphene are critical in achieving the desired properties and outcome. In understanding the importance, a number of strategies including various functionalization, doping and hybridization have recently been identified and explored to successfully alter the work function of graphene. In this review we primarily highlight the different ways of surface modification, which have been used to specifically modify the band gap of graphene and its work function. This article focuses on the most recent perspectives, current trends and gives some indication of future challenges and possibilities.

Analysis of the variation of range parameters of thermal cameras

NASA Astrophysics Data System (ADS)

Bareła, Jarosław; Kastek, Mariusz; Firmanty, Krzysztof; Krupiński, Michał

2016-10-01

Measured range characteristics may vary considerably (up to several dozen percent) between different samples of the same camera type. The question is whether the manufacturing process somehow lacks repeatability or the commonly used measurement procedures themselves need improvement. The presented paper attempts to deal with the aforementioned question. The measurement method has been thoroughly analyzed as well as the measurement test bed. Camera components (such as detector and optics) have also been analyzed and their key parameters have been measured, including noise figures of the entire system. Laboratory measurements are the most precise method used to determine range parameters of a thermal camera. However, in order to obtain reliable results several important conditions have to be fulfilled. One must have the test equipment capable of measurement accuracy (uncertainty) significantly better than the magnitudes of measured quantities. The measurements must be performed in a controlled environment thus excluding the influence of varying environmental conditions. The personnel must be well-trained, experienced in testing the thermal imaging devices and familiar with the applied measurement procedures. The measurement data recorded for several dozen of cooled thermal cameras (from one of leading camera manufacturers) have been the basis of the presented analysis. The measurements were conducted in the accredited research laboratory of Institute of Optoelectronics (Military University of Technology).

Miniaturized diffraction based interferometric distance measurement sensor

NASA Astrophysics Data System (ADS)

Kim, Byungki

In this thesis, new metrology hardware is designed, fabricated, and tested to provide improvements over current MEMS metrology. The metrology system is a micromachined scanning interferometer (muSI) having a sub-nm resolution in a compact design. The proposed microinterferometer forms a phase sensitive diffraction grating with interferomeric sensitivity, while adding the capability of better lateral resolution by focusing the laser to a smaller spot size. A detailed diffraction model of the microinterferometer was developed to simulate the device performance and to suggest the location of photo detectors for integrated optoelectronics. A particular device is fabricated on a fused silica substrate using aluminum to form the deformable diffraction grating fingers and AZ P4620 photo resist (PR) for the microlens. The details of the fabrication processes are presented. The structure also enables optoelectronics to be integrated so that the interferometer with photo detectors can fit in an area that is 1 mm x 1 mm. The scanning results using a fixed grating muSI demonstrated that it could measure vibration profile as well as static vertical (less than a half wave length) and lateral dimension of MEMS. The muSI, which is integrated with photo diodes, demonstrated its operation by scanning a cMUT. The PID control has been tested and resulted in improvement in scanned images. The integrated muSI demonstrated that the deformable grating could be used to tune the measurement keep the interferometer in quadrature for highest sensitivity.

Novel transparent high-performance AgNWs/ZnO electrodes prepared on unconventional substrates with 3D structured surfaces

NASA Astrophysics Data System (ADS)

Lan, Wei; Yang, Zhiwei; Zhang, Yue; Wei, Yupeng; Wang, Pengxiang; Abas, Asim; Tang, Guomei; Zhang, Xuetao; Wang, Junya; Xie, Erqing

2018-03-01

With the development of optoelectronic devices with three-dimensional (3D) structured surfaces, transparent electrodes that can be deposited on non-plane substrates have become increasingly important. In this paper, novel transparent silver nanowire (AgNWs)/ZnO film electrodes were uniformly prepared on treated 3D glass and PET substrates with a combination of spin-coating and heat-welding. The AgNWs/ZnO films show a transmittance of ∼88% and a sheet resistance of ∼10 Ω/sq. They are comparable with commercial ITO films. Furthermore, only a small in-plane resistance variation of ∼1 Ω/sq was measured using four-point probe mapping in films with a 10 cm × 10 cm area. These results confirm that these novel film electrodes are very uniform. Both electrical resistance and optical transmittance of the films remain mostly intact after 1000 bending cycles and tape peeling-tests with 10 cycles. The films show high thermal stability for more than one month at 80 °C. The strategy provides a new route for the design and fabrication of optoelectronic devices with 3D structured surfaces.

CMOS Optoelectronic Lock-In Amplifier With Integrated Phototransistor Array.

PubMed

An Hu; Chodavarapu, Vamsy P

2010-10-01

We describe the design and development of an optoelectronic lock-in amplifier (LIA) for optical sensing and spectroscopy applications. The prototype amplifier is fabricated using Taiwan Semiconductor Manufacturing Co. complementary metal-oxide semiconductor 0.35-μm technology and uses a phototransistor array (total active area is 400 μm × 640μm) to convert the incident optical signals into electrical currents. The photocurrents are then converted into voltage signals using a transimpedance amplifier for subsequent convenient signal processing by the LIA circuitry. The LIA is optimized to be operational at 20-kHz modulation frequency but is operational in the frequency range from 13 kHz to 25 kHz. The system is tested with a light-emitting diode (LED) as the light source. The noise and signal distortions are suppressed with filters and a phase-locked loop (PLL) implemented in the LIA. The output dc voltage of the LIA is proportional to the incident optical power. The minimum measured dynamic reserve and sensitivity are 1.31 dB and 34 mV/μW, respectively. The output versus input relationship has shown good linearity. The LIA consumes an average power of 12.79 mW with a 3.3-V dc power supply.

Graphene-MoS2 Heterojunctions for High-Speed Opto-electronics

NASA Astrophysics Data System (ADS)

Horng, Jason; Wang, Alex; Wang, Danqing; Li, Alexander Shengzhi; Wang, Feng

Heterostructures consisting of two-dimensional materials has drawn significant attention in different research fields owning to their novel electronic states and potential applications. Transmitting information with transition metal dichalcogenides(TMDC) electro-optical modulator switch interconnect is of great interest for technological applications. However, their high-speed applications have been slowed by their intrinsically high resistivity as well as the difficulties in making optimized metal contacts. Here, we present a new strategy by using graphene as a tunable contact to two-dimensional semiconductors to explore possible applications in high-speed opto-electronics. We will present an optical study to provide better understanding of band alignment in graphene/MoS2 heterostructures and a demonstration of high-speed opto-electronics based on these heterostructures. The result shows the new scheme could have potential in both opto-modulators and optical sensing applications.

Wafer bonded virtual substrate and method for forming the same

DOEpatents

Atwater, Jr., Harry A.; Zahler, James M [Pasadena, CA; Morral, Anna Fontcuberta i [Paris, FR

2007-07-03

A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

Wafer bonded virtual substrate and method for forming the same

NASA Technical Reports Server (NTRS)

Atwater, Jr., Harry A. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcuberta i (Inventor)

2007-01-01

A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

Asynchronous transfer mode distribution network by use of an optoelectronic VLSI switching chip.

PubMed

Lentine, A L; Reiley, D J; Novotny, R A; Morrison, R L; Sasian, J M; Beckman, M G; Buchholz, D B; Hinterlong, S J; Cloonan, T J; Richards, G W; McCormick, F B

1997-03-10

We describe a new optoelectronic switching system demonstration that implements part of the distribution fabric for a large asynchronous transfer mode (ATM) switch. The system uses a single optoelectronic VLSI modulator-based switching chip with more than 4000 optical input-outputs. The optical system images the input fibers from a two-dimensional fiber bundle onto this chip. A new optomechanical design allows the system to be mounted in a standard electronic equipment frame. A large section of the switch was operated as a 208-Mbits/s time-multiplexed space switch, which can serve as part of an ATM switch by use of an appropriate out-of-band controller. A larger section with 896 input light beams and 256 output beams was operated at 160 Mbits/s as a slowly reconfigurable space switch.

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

PubMed

Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras; Coleman, Jonathan N; Strano, Michael S

2012-11-01

The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.

Optoelectronic device for the measurement of the absolute linear position in the micrometric displacement range

NASA Astrophysics Data System (ADS)

Morlanes, Tomas; de la Pena, Jose L.; Sanchez-Brea, Luis M.; Alonso, Jose; Crespo, Daniel; Saez-Landete, Jose B.; Bernabeu, Eusebio

2005-07-01

In this work, an optoelectronic device that provides the absolute position of a measurement element with respect to a pattern scale upon switch-on is presented. That means that there is not a need to perform any kind of transversal displacement after the startup of the system. The optoelectronic device is based on the process of light propagation passing through a slit. A light source with a definite size guarantees the relation of distances between the different elements that constitute our system and allows getting a particular optical intensity profile that can be measured by an electronic post-processing device providing the absolute location of the system with a resolution of 1 micron. The accuracy of this measuring device is restricted to the same limitations of any incremental position optical encoder.

Dynamic assessment of women pelvic floor function by using a fiber Bragg grating sensor system

NASA Astrophysics Data System (ADS)

Ferreira, Luis A.; Araújo, Francisco M.; Mascarenhas, Teresa; Natal Jorge, Renato M.; Fernandes, António A.

2006-02-01

We present a novel sensing system consisting of an intravaginal probe and an optoelectronic measurement unit, which allows an easy, comfortable and quantitative dynamic evaluation of women pelvic floor muscle strength. The sensing probe is based on a silicone cylinder that transduces radial muscle pressure into axial load applied to a fiber Bragg grating strain sensor. The performance of a first sensor probe prototype with temperature referentiation and of the autonomous, portable optoelectronic measurement unit with data logging capabilities and graphical user interface is disclosed. The presented results refer to an ongoing collaboration work between researchers from the Medical, Optoelectronics and Mechanical areas, directed to the development of equipment that can assist in medical practice and help in the research of primary mechanisms responsible for several pelvic floor disorders, in particular urogenital prolapses.

Synthesis of thin films and materials utilizing a gaseous catalyst

DOEpatents

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Low-Energy Tunable Self-Modulated Nanolasers (1.1 SHORT-TERM INNOVATIVE RESEARCH (STIR) PROGRAM)

DTIC Science & Technology

2016-09-28

Optoelectronics: Low -Energy Tunable Self- Modulated Nanolasers (1.1 SHORT-TERM INNOVATIVE RESEARCH (STIR) PROGRAM) Our goal was to exploit Quantum...reviewed journals: Final Report: Optoelectronics: Low -Energy Tunable Self-Modulated Nanolasers (1.1 SHORT-TERM INNOVATIVE RESEARCH (STIR) PROGRAM...metal layer. By optimizing the thickness of the low index shield between the metal and semiconductor, the gain threshold of the laser can be

Sub-Poissonian light and photocurrent shot-noise suppression in closed opto-electronic loop

NASA Technical Reports Server (NTRS)

Masalov, A. V.; Putilin, A. A.; Vasilyev, Michael V.

1994-01-01

We examine experimentally photocurrent noise reduction in the opto-electronic closed loop. Photocurrent noise density 12.5 dB below the shot-noise was observed. So large suppression was not reached in previous experiments and cannot be explained in terms of an ordinary sub-Poissonian light in the loop. We propose the concept of anticorrelation state for the description of light in the loop.

JSEP Fellowship

DTIC Science & Technology

1993-06-28

entitled "MBE Grown Microcavities for Optoelectronic Devices." In the dissertation work,1 the precision of molecular - beam epitaxy (MBE) is taken...Layers For Surface Normal Optoelectronic Devices," North American Conference on Molecular Beam Epitaxy , Ottawa, Canada, October 12-14, 1992, to be...8. C. Lei, T. J. Rogers, D. G. Deppe, and B. G. Streetman, "InGaAs-GaAs Quantum Well Vertical-Cavity Surface-Emitting Laser Using Molecular Beam

Opto-electronic conversion logic behaviour through dynamic modulation of electron/energy transfer states at the TiO2-carbon quantum dot interface.

PubMed

Wang, Fang; Zhang, Yonglai; Liu, Yang; Wang, Xuefeng; Shen, Mingrong; Lee, Shuit-Tong; Kang, Zhenhui

2013-03-07

Here we show a bias-mediated electron/energy transfer process at the CQDs-TiO(2) interface for the dynamic modulation of opto-electronic properties. Different energy and electron transfer states have been observed in the CQDs-TNTs system due to the up-conversion photoluminescence and the electron donation/acceptance properties of the CQDs decorated on TNTs.

Optoelectronic Apparatus Measures Glucose Noninvasively

NASA Technical Reports Server (NTRS)

Ansari, Rafat R.; Rovati, Luigi L.

2003-01-01

An optoelectronic apparatus has been invented as a noninvasive means of measuring the concentration of glucose in the human body. The apparatus performs polarimetric and interferometric measurements of the human eye to acquire data from which the concentration of glucose in the aqueous humor can be computed. Because of the importance of the concentration of glucose in human health, there could be a large potential market for instruments based on this apparatus.

III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures.

PubMed

Sun, Wei; Tan, Chee-Keong; Tansu, Nelson

2017-07-27

The III-Nitride digital alloy (DA) is comprehensively studied as a short-period superlattice nanostructure consisting of ultra-thin III-Nitride epitaxial layers. By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are expected to have comparable optoelectronic properties as the conventional III-Nitride alloys. Here we carried out numerical studies on the InGaN DA showing the tunable optoelectronic properties of the III-Nitride DA. Our study shows that the energy gap of the InGaN DA can be tuned from ~0.63 eV up to ~2.4 eV, where the thicknesses and the thickness ratio of each GaN and InN ultra-thin binary layers within the DA structure are the key factors for tuning bandgap. Correspondingly, the absorption spectra of the InGaN DA yield broad wavelength tunability which is comparable to that of bulk InGaN ternary alloy. In addition, our investigation also reveals that the electron-hole wavefunction overlaps are remarkably large in the InGaN DA structure despite the existence of strain effect and build-in polarization field. Our findings point out the potential of III-Nitride DA as an artificially engineered nanostructure for optoelectronic device applications.

Doping dependent crystal structures and optoelectronic properties of n-type CdSe:Ga nanowries.

PubMed

Hu, Zhizhong; Zhang, Xiujuan; Xie, Chao; Wu, Chunyan; Zhang, Xiaozhen; Bian, Liang; Wu, Yiming; Wang, Li; Zhang, Yuping; Jie, Jiansheng

2011-11-01

Although CdSe nanostructures possess excellent electrical and optical properties, efforts to make nano-optoelectronic devices from CdSe nanostructures have been hampered by the lack of efficient methods to rationally control their structural and electrical characteristics. Here, we report CdSe nanowires (NWs) with doping dependent crystal structures and optoelectronic properties by using gallium (Ga) as the efficient n-type dopant via a simple thermal co-evaporation method. The phase change of CdSe NWs from wurtzite to zinc blende with increased doping level is observed. Systematical measurements on the transport properties of the CdSe:Ga NWs reveal that the NW conductivity could be tuned in a wide range of near nine orders of magnitude by adjusting the Ga doping level and a high electron concentration up to 4.5 × 10(19) cm(-3) is obtained. Moreover, high-performance top-gate field-effect transistors are constructed based on the individual CdSe:Ga NWs by using high-κ HfO(2) as the gate dielectric. The great potential of the CdSe:Ga NWs as high-sensitive photodetectors and nanoscale light emitters is also exploited, revealing the promising applications of the CdSe:Ga NWs in new-generation nano-optoelectronics.

Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect.

PubMed

Wang, Zhaona; Yu, Ruomeng; Wen, Xiaonan; Liu, Ying; Pan, Caofeng; Wu, Wenzhuo; Wang, Zhong Lin

2014-12-23

Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

Two-Dimensional Materials for Halide Perovskite-Based Optoelectronic Devices.

PubMed

Chen, Shan; Shi, Gaoquan

2017-06-01

Halide perovskites have high light absorption coefficients, long charge carrier diffusion lengths, intense photoluminescence, and slow rates of non-radiative charge recombination. Thus, they are attractive photoactive materials for developing high-performance optoelectronic devices. These devices are also cheap and easy to be fabricated. To realize the optimal performances of halide perovskite-based optoelectronic devices (HPODs), perovskite photoactive layers should work effectively with other functional materials such as electrodes, interfacial layers and encapsulating films. Conventional two-dimensional (2D) materials are promising candidates for this purpose because of their unique structures and/or interesting optoelectronic properties. Here, we comprehensively summarize the recent advancements in the applications of conventional 2D materials for halide perovskite-based photodetectors, solar cells and light-emitting diodes. The examples of these 2D materials are graphene and its derivatives, mono- and few-layer transition metal dichalcogenides (TMDs), graphdiyne and metal nanosheets, etc. The research related to 2D nanostructured perovskites and 2D Ruddlesden-Popper perovskites as efficient and stable photoactive layers is also outlined. The syntheses, functions and working mechanisms of relevant 2D materials are introduced, and the challenges to achieving practical applications of HPODs using 2D materials are also discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Engineering highly organized and aligned single walled carbon nanotube networks for electronic device applications: Interconnects, chemical sensor, and optoelectronics

NASA Astrophysics Data System (ADS)

Kim, Young Lae

For 20 years, single walled carbon nanotubes (SWNTs) have been studied actively due to their unique one-dimensional nanostructure and superior electrical, thermal, and mechanical properties. For these reasons, they offer the potential to serve as building blocks for future electronic devices such as field effect transistors (FETs), electromechanical devices, and various sensors. In order to realize these applications, it is crucial to develop a simple, scalable, and reliable nanomanufacturing process that controllably places aligned SWNTs in desired locations, orientations, and dimensions. Also electronic properties (semiconducting/metallic) of SWNTs and their organized networks must be controlled for the desired performance of devices and systems. These fundamental challenges are significantly limiting the use of SWNTs for future electronic device applications. Here, we demonstrate a strategy to fabricate highly controlled micro/nanoscale SWNT network structures and present the related assembly mechanism to engineer the SWNT network topology and its electrical transport properties. A method designed to evaluate the electrical reliability of such nano- and microscale SWNT networks is also presented. Moreover, we develop and investigate a robust SWNT based multifunctional selective chemical sensor and a range of multifunctional optoelectronic switches, photo-transistors, optoelectronic logic gates and complex optoelectronic digital circuits.

Solution growth of single crystal methylammonium lead halide perovskite nanostructures for optoelectronic and photovoltaic applications.

PubMed

Fu, Yongping; Meng, Fei; Rowley, Matthew B; Thompson, Blaise J; Shearer, Melinda J; Ma, Dewei; Hamers, Robert J; Wright, John C; Jin, Song

2015-05-06

Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic-inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid-liquid interfacial conversion reaction can create a highly crystalline, nanostructured MAPbI3 film with micrometer grain size and high surface coverage that enables photovoltaic devices with a power conversion efficiency of 10.6%. These results suggest that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.

Improved interface control for high-performance graphene-based organic solar cells

NASA Astrophysics Data System (ADS)

Jung, Seungon; Lee, Junghyun; Choi, Yunseong; Myeon Lee, Sang; Yang, Changduk; Park, Hyesung

2017-12-01

The demand for high-efficiency flexible optoelectronic devices is ever-increasing because next-generation electronic devices that comprise portable or wearable electronic systems are set to play an important role. Graphene has received extensive attention as it is considered to be a promising candidate material for transparent flexible electrode platforms owing to its outstanding electrical, optical, and physical properties. Despite these properties, the inert and hydrophobic nature of graphene surfaces renders it difficult to use in optoelectronic devices. In particular, commonly used charge transporting layer (CTL) materials for organic solar cells (OSCs) cannot uniformly coat a graphene surface, which leads to such devices failing. Herein, this paper proposes an approach that will enable CTL materials to completely cover a graphene electrode; this is done with the assistance of commonly accessible polar solvents. These are successfully applied to various configurations of OSCs, with power conversion efficiencies of 8.17% for graphene electrode-based c-OSCs (OSCs with conventional structures), 8.38% for i-OSCs (OSCs with inverted structures), and 7.53% for flexible solar cells. The proposed approach is expected to bring about significant advances for efficiency enhancements in graphene-based optoelectronic devices, and it is expected that it will open up new possibilities for flexible optoelectronic systems.

Computational and theoretical modeling of pH and flow effects on the early-stage non-equilibrium self-assembly of optoelectronic peptides

NASA Astrophysics Data System (ADS)

Mansbach, Rachael; Ferguson, Andrew

Self-assembling π-conjugated peptides are attractive candidates for the fabrication of bioelectronic materials possessing optoelectronic properties due to electron delocalization over the conjugated peptide groups. We present a computational and theoretical study of an experimentally-realized optoelectronic peptide that displays triggerable assembly in low pH to resolve the microscopic effects of flow and pH on the non-equilibrium morphology and kinetics of assembly. Using a combination of molecular dynamics simulations and hydrodynamic modeling, we quantify the time and length scales at which convective flows employed in directed assembly compete with microscopic diffusion to influence assembly. We also show that there is a critical pH below which aggregation proceeds irreversibly, and quantify the relationship between pH, charge density, and aggregate size. Our work provides new fundamental understanding of pH and flow of non-equilibrium π-conjugated peptide assembly, and lays the groundwork for the rational manipulation of environmental conditions and peptide chemistry to control assembly and the attendant emergent optoelectronic properties. This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award # DE-SC0011847, and by the Computational Science and Engineering Fellowship from the University of Illinois at Urbana-Champaign.

Many body calculations of the optoelectronic properties of h-AlN: from 3D to 2D

NASA Astrophysics Data System (ADS)

Kecik, Deniz; Bacaksiz, Cihan; Durgun, Engin; Senger, Tugrul

Outstanding electronic and optical properties of graphene, h-BN, MoS2 etc. motivate the further discovery of novel 2D materials such as AlN, a III-V compound, with remarkable features for potential optoelectronic applications, due to its wide indirect band gap. The layer and strain dependent optoelectronic properties of the recently synthesized monolayer hexagonal AlN (h-AlN) were investigated using density functional and many body perturbation theories, where RPA and BSE were employed on top of the QPG0W0 method. The optical spectra of 1-4 layered h-AlN revealed prominent absorption beyond the visible light regime; absorbance within the UV range increasing with the number of layers. In addition, the applied tensile strain (1 - 7 %) was observed to gradually redshift the absorption spectra. While the many body corrections induced significant blueshift to the optical spectra, evidence of bound excitons were also found for the layered structures. Hence, the optoelectronic properties of layered h-AlN can be tuned by modifying their structure and applying strain, moreover are greatly altered when electron-hole interactions are considered. This work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK, Project No. 113T050).

NASA Tech Briefs, November 2007

NASA Technical Reports Server (NTRS)

2007-01-01

Topics include: Wireless Measurement of Contact and Motion Between Contact Surfaces; Wireless Measurement of Rotation and Displacement Rate; Portable Microleak-Detection System; Free-to-Roll Testing of Airplane Models in Wind Tunnels; Cryogenic Shrouds for Testing Thermal-Insulation Panels; Optoelectronic System Measures Distances to Multiple Targets; Tachometers Derived From a Brushless DC Motor; Algorithm-Based Fault Tolerance for Numerical Subroutines; Computational Support for Technology- Investment Decisions; DSN Resource Scheduling; Distributed Operations Planning; Phase-Oriented Gear Systems; Freeze Tape Casting of Functionally Graded Porous Ceramics; Electrophoretic Deposition on Porous Non- Conductors; Two Devices for Removing Sludge From Bioreactor Wastewater; Portable Unit for Metabolic Analysis; Flash Diffusivity Technique Applied to Individual Fibers; System for Thermal Imaging of Hot Moving Objects; Large Solar-Rejection Filter; Improved Readout Scheme for SQUID-Based Thermometry; Error Rates and Channel Capacities in Multipulse PPM; Two Mathematical Models of Nonlinear Vibrations; Simpler Adaptive Selection of Golomb Power-of- Two Codes; VCO PLL Frequency Synthesizers for Spacecraft Transponders; Wide Tuning Capability for Spacecraft Transponders; Adaptive Deadband Synchronization for a Spacecraft Formation; Analysis of Performance of Stereoscopic-Vision Software; Estimating the Inertia Matrix of a Spacecraft; Spatial Coverage Planning for Exploration Robots; and Increasing the Life of a Xenon-Ion Spacecraft Thruster.

Integration of conductive reduced graphene oxide into microstructured optical fibres for optoelectronics applications.

PubMed

Ruan, Yinlan; Ding, Liyun; Duan, Jingjing; Ebendorff-Heidepriem, Heike; Monro, Tanya M

2016-02-22

Integration of conductive materials into optical fibres can largely expand functions of fibre devices including surface plasmon resonator/metamaterial, modulators/detectors, or biosensors. Some early attempts have been made to incorporate metals such as tin into fibres during the fibre drawing process. Due to the restricted range of materials that have compatible melting temperatures with that of silica glass, the methods to incorporate metals along the length of the fibres are very challenging. Moreover, metals are nontransparent with strong light absorption, which causes high fibre loss. This article demonstrates a novel but simple method for creating transparent conductive reduced graphene oxide film onto microstructured silica fibres for potential optoelectronic applications. The strongly confined evanescent field of the suspended core fibres with only 2 μW average power was creatively used to transform graphene oxide into reduced graphene oxide with negligible additional loss. Existence of reduced graphene oxide was confirmed by their characteristic Raman signals, shifting of their fluorescence peaks as well as largely decreased resistance of the bulk GO film after laser beam exposure.

Synthetic Control of Exciton Behavior in Colloidal Quantum Dots.

PubMed

Pu, Chaodan; Qin, Haiyan; Gao, Yuan; Zhou, Jianhai; Wang, Peng; Peng, Xiaogang

2017-03-08

Colloidal quantum dots are promising optical and optoelectronic materials for various applications, whose performance is dominated by their excited-state properties. This article illustrates synthetic control of their excited states. Description of the excited states of quantum-dot emitters can be centered around exciton. We shall discuss that, different from conventional molecular emitters, ground-state structures of quantum dots are not necessarily correlated with their excited states. Synthetic control of exciton behavior heavily relies on convenient and affordable monitoring tools. For synthetic development of ideal optical and optoelectronic emitters, the key process is decay of band-edge excitons, which renders transient photoluminescence as important monitoring tool. On the basis of extensive synthetic developments in the past 20-30 years, synthetic control of exciton behavior implies surface engineering of quantum dots, including surface cation/anion stoichiometry, organic ligands, inorganic epitaxial shells, etc. For phosphors based on quantum dots doped with transition metal ions, concentration and location of the dopant ions within a nanocrystal lattice are found to be as important as control of the surface states in order to obtain bright dopant emission with monoexponential yet tunable photoluminescence decay dynamics.

Tin Selenide (SnSe): Growth, Properties, and Applications

PubMed Central

Shi, Weiran; Gao, Minxuan; Wei, Jinping; Gao, Jianfeng; Fan, Chenwei; Ashalley, Eric; Wang, Zhiming

2018-01-01

Abstract The indirect bandgap semiconductor tin selenide (SnSe) has been a research hotspot in the thermoelectric fields since a ZT (figure of merit) value of 2.6 at 923 K in SnSe single crystals along the b‐axis is reported. SnSe has also been extensively studied in the photovoltaic (PV) application for its extraordinary advantages including excellent optoelectronic properties, absence of toxicity, cheap raw materials, and relative abundance. Moreover, the thermoelectric and optoelectronic properties of SnSe can be regulated by the structural transformation and appropriate doping. Here, the studies in SnSe research, from its evolution to till now, are reviewed. The growth, characterization, and recent developments in SnSe research are discussed. The most popular growth techniques that have been used to prepare SnSe materials are discussed in detail with their recent progress. Important phenomena in the growth of SnSe as well as the problems remaining for future study are discussed. The applications of SnSe in the PV fields, Li‐ion batteries, and other emerging fields are also discussed. PMID:29721411

Tin Selenide (SnSe): Growth, Properties, and Applications.

PubMed

Shi, Weiran; Gao, Minxuan; Wei, Jinping; Gao, Jianfeng; Fan, Chenwei; Ashalley, Eric; Li, Handong; Wang, Zhiming

2018-04-01

The indirect bandgap semiconductor tin selenide (SnSe) has been a research hotspot in the thermoelectric fields since a ZT (figure of merit) value of 2.6 at 923 K in SnSe single crystals along the b -axis is reported. SnSe has also been extensively studied in the photovoltaic (PV) application for its extraordinary advantages including excellent optoelectronic properties, absence of toxicity, cheap raw materials, and relative abundance. Moreover, the thermoelectric and optoelectronic properties of SnSe can be regulated by the structural transformation and appropriate doping. Here, the studies in SnSe research, from its evolution to till now, are reviewed. The growth, characterization, and recent developments in SnSe research are discussed. The most popular growth techniques that have been used to prepare SnSe materials are discussed in detail with their recent progress. Important phenomena in the growth of SnSe as well as the problems remaining for future study are discussed. The applications of SnSe in the PV fields, Li-ion batteries, and other emerging fields are also discussed.

Synthesis, properties and applications of 2D non-graphene materials.

PubMed

Wang, Feng; Wang, Zhenxing; Wang, Qisheng; Wang, Fengmei; Yin, Lei; Xu, Kai; Huang, Yun; He, Jun

2015-07-24

As an emerging class of new materials, two-dimensional (2D) non-graphene materials, including layered and non-layered, and their heterostructures are currently attracting increasing interest due to their promising applications in electronics, optoelectronics and clean energy. In contrast to traditional semiconductors, such as Si, Ge and III-V group materials, 2D materials show significant merits of ultrathin thickness, very high surface-to-volume ratio, and high compatibility with flexible devices. Owing to these unique properties, while scaling down to ultrathin thickness, devices based on these materials as well as artificially synthetic heterostructures exhibit novel and surprising functions and performances. In this review, we aim to provide a summary on the state-of-the-art research activities on 2D non-graphene materials. The scope of the review will cover the preparation of layered and non-layered 2D materials, construction of 2D vertical van der Waals and lateral ultrathin heterostructures, and especially focus on the applications in electronics, optoelectronics and clean energy. Moreover, the review is concluded with some perspectives on the future developments in this field.

High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer.

PubMed

Miyoshi, Yusuke; Fukazawa, Yusuke; Amasaka, Yuya; Reckmann, Robin; Yokoi, Tomoya; Ishida, Kazuki; Kawahara, Kenji; Ago, Hiroki; Maki, Hideyuki

2018-03-29

High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.

New optoelectronic methodology for nondestructive evaluation of MEMS at the wafer level

NASA Astrophysics Data System (ADS)

Furlong, Cosme; Ferguson, Curtis F.; Melson, Michael J.

2004-02-01

One of the approaches to fabrication of MEMS involves surface micromachining to define dies on single crystal silicon wafers, dicing of the wafers to separate the dies, and electronic packaging of the individual dies. Dicing and packaging of MEMS accounts for a large fraction of the fabrication costs, therefore, nondestructive evaluation at the wafer level, before dicing, can have significant implications on improving production yield and costs. In this paper, advances in development of optoelectronic holography (OEH) techniques for nondestructive, noninvasive, full-field of view evaluation of MEMS at the wafer level are described. With OEH techniques, quantitative measurements of shape and deformation of MEMS, as related to their performance and integrity, are obtained with sub-micrometer spatial resolution and nanometer measuring accuracy. To inspect an entire wafer with OEH methodologies, measurements of overlapping regions of interest (ROI) on a wafer are recorded and adjacent ROIs are stitched together through efficient 3D correlation analysis algorithms. Capabilities of the OEH techniques are illustrated with representative applications, including determination of optimal inspection conditions to minimize inspection time while achieving sufficient levels of accuracy and resolution.

Photodetectors Based on Organic–Inorganic Hybrid Lead Halide Perovskites

PubMed Central

Zhou, Jiachen

2017-01-01

Abstract Recent years have witnessed skyrocketing research achievements in organic–inorganic hybrid lead halide perovskites (OIHPs) in the photovoltaic field. In addition to photovoltaics, more and more studies have focused on OIHPs‐based photodetectors in the past two years, due to the remarkable optoelectronic properties of OIHPs. This article summarizes the latest progress in this research field. To begin with, the factors influencing the performance of photodetectors are discussed, including both internal and external factors. In particular, the channel width and the incident power intensities should be taken into account to precisely and objectively evaluate and compare the output performance of different photodetectors. Next, photodetectors fabricated on single‐component perovskites in terms of different micromorphologies are discussed, namely, 3D thin‐film and single crystalline, 2D nanoplates, 1D nanowires, and 0D nanocrystals, respectively. Then, bilayer structured perovskite‐based photodetectors incorporating inorganic and organic semiconductors are discussed to improve the optoelectronic performance of their pristine counterparts. Additionally, flexible OIHPs‐based photodetectors are highlighted. Finally, a brief conclusion and outlook is given on the progress and challenges in the field of perovskites‐based photodetectors. PMID:29375959

Low-Resistivity Zinc Selenide for Heterojunctions

NASA Technical Reports Server (NTRS)

Stirn, R. J.

1986-01-01

Magnetron reactive sputtering enables doping of this semiconductor. Proposed method of reactive sputtering combined with doping shows potential for yielding low-resistivity zinc selenide films. Zinc selenide attractive material for forming heterojunctions with other semiconductor compounds as zinc phosphide, cadmium telluride, and gallium arsenide. Semiconductor junctions promising for future optoelectronic devices, including solar cells and electroluminescent displays. Resistivities of zinc selenide layers deposited by evaporation or chemical vapor deposition too high to form practical heterojunctions.

Radiation resistance of a gamma-ray irradiated nonlinear optic chromophore

NASA Astrophysics Data System (ADS)

Zhang, Cheng; Taylor, Edward W.

2009-11-01

The radiation resistance of organic electro-optic and optoelectronic materials for space applications is receiving increased attention. An earlier investigation reported that guest-host poled polymer EO modulator devices composed of a phenyltetraene bridge-type chromophore in amorphous polycarbonate (CLD/APC) did not exhibit a decrease in EO response (i.e., an increase in modulation-switching voltage- Vπ) following irradiation by low dose [10-160 krad(Si)] 60Co gamma-rays. To provide further evidences to the observed radiation stability, the post-irradiation responses of 60Co gamma-rays on CLD1/APC thin films are examined by various chemical and spectroscopic methods including: a solubility test, thin-layer chromatography, proton nuclear magnetic resonance spectroscopy, UV-vis absorption, and infra-red absorption. The results indicate that CLD1 and APC did not decompose under gamma-ray irradiation at dose levels ranging from 66-274 krad(Si) and from 61-154 krad(Si), respectively which support the previously reported data.

Optoelectronics in TESLA, LHC, and pi-of-the-sky experiments

NASA Astrophysics Data System (ADS)

Romaniuk, Ryszard S.; Pozniak, Krzysztof T.; Wrochna, Grzegorz; Simrock, Stefan

2004-09-01

Optical and optoelectronics technologies are more and more widely used in the biggest world experiments of high energy and nuclear physics, as well as in the astronomy. The paper is a kind of a broad digest describing the usage of optoelectronics is such experiments and information about some of the involved teams. The described experiments include: TESLA linear accelerator and FEL, Compact Muon Solenoid at LHC and recently started π-of-the-sky global gamma ray bursts (with asociated optical flashes) observation experiment. Optoelectornics and photonics offer several key features which are either extending the technical parameters of existing solutions or adding quite new practical application possibilities. Some of these favorable features of photonic systems are: high selectivity of optical sensors, immunity to some kinds of noise processes, extremely broad bandwidth exchangeable for either terabit rate transmission or ultrashort pulse generation, parallel image processing capability, etc. The following groups of photonic components and systems were described: (1) discrete components applications like: LED, PD, LD, CCD and CMOS cameras, active optical crystals and optical fibers in radiation dosimetry, astronomical image processing and for building of more complex photonic systems; (2) optical fiber networks serving as very stable phase distribution, clock signal distribution, distributed dosimeters, distributed gigabit transmission for control, diagnostics and data acquisition/processing; (3) fast and stable coherent femtosecond laser systems with active optical components for electro-optical sampling and photocathode excitation in the RF electron gun for linac; The parameters of some of these systems were quoted and discussed. A number of the debated solutions seems to be competitive against the classical ones. Several future fields seem to emerge involving direct coupling between the ultrafast photonic and the VLSI FPGA based technologies.

Optoelectronic properties of CC2TA towards a good TADF material

NASA Astrophysics Data System (ADS)

Mishra, Ashok Kumar

2018-05-01

2,4-bis{f3-(9H-carbazol-9-yl)-9H-carbazol-9-yl}-6-phenyl-1,3,5-triazine (CC2TA) is a triazine derivatives in which the acceptor phenyltriazine unit is used as the central skeleton and donor bicarbazole units are bonded to both ends of the skeleton. Molecular orbital calculations exhibit that the HOMO and LUMO are locally allocated chiefly in the bicarbazole and phenyltriazine units, respectively. There are a class of organic molecules and polymers which exhibit semiconductor behavior because of nearly free conjugate π-electrons. Hopping of these electrons in molecules forms different excited singlet and triplet states named as excitons. Some of these organic molecules can be set to emit photons by triplet-singlet excitonic transition via a process called Thermally Activated Delayed Fluorescence (TADF) which is exploited for designing the Organic Light Emitting diode (OLED.) CC2TA is one of these reported noble metal-free TADF molecules which offers unique opto electronic properties arising from the reverse intersystem crossing between the lowest singlet (S) and triplet (T) excited states. Its ability to harvest triplet excitons for fluorescence through facilitated reverse intersystem crossing (T→S) could directly impact their properties and performances, which is attractive for a wide variety of low-cost optoelectronic device. In the present study, the CC2TA compounds have been taken up for the investigation of various optoelectronic properties including the thermally activated delayed fluorescence (TADF) by using the Koopmans Method and Density Functional Theory. The present study discusses the utility of the CC2TA organic semiconductor as a suitable TADF material essential for developing an efficient Organic Light Emitting Diode (OLED).

The application and improvement of Fourier transform spectrometer experiment

NASA Astrophysics Data System (ADS)

Liu, Zhi-min; Gao, En-duo; Zhou, Feng-qi; Wang, Lan-lan; Feng, Xiao-hua; Qi, Jin-quan; Ji, Cheng; Wang, Luning

2017-08-01

According to teaching and experimental requirements of Optoelectronic information science and Engineering, in order to consolidate theoretical knowledge and improve the students practical ability, the Fourier transform spectrometer ( FTS) experiment, its design, application and improvement are discussed in this paper. The measurement principle and instrument structure of Fourier transform spectrometer are introduced, and the spectrums of several common Laser devices are measured. Based on the analysis of spectrum and test, several possible improvement methods are proposed. It also helps students to understand the application of Fourier transform in physics.

Development of liquid crystal based adaptive optical elements for space applications

NASA Astrophysics Data System (ADS)

Geday, M. A.; Quintana, X.; Otón, E.; Cerrolaza, B.; Lopez, D.; Garcia de Quiro, F.; Manolis, I.; Short, A.

2017-11-01

In this paper we present the results obtained within the context of the ESA-funded project Programmable Optoelectronic Adaptive Element (AO/1-5476/07/NL/EM). The objective of this project is the development of adaptive (reconfigurable) optical elements for use in space applications and the execution of preliminary qualification tests in the relevant environment. The different designs and materials that have been considered and manufactured for a 2D beam steerer based on passive matrix liquid crystal programmable blaze grating will described and discussed.

Opto-electronic oscillator and its applications

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, Lute

1997-04-01

We review the properties of a new class of microwave oscillators called opto-electronic oscillators (OEO). We present theoretical and experimental results of a multi-loop technique for single mode selection. We then describe a new development called coupled OEO (COEO) in which the electrical oscillation is directly coupled with the optical oscillation, producing an OEO that generates stable optical pulses and single mode microwave oscillation simultaneously. Finally we discuss various applications of OEO.

An Active Metamaterial Platform for Chiral Responsive Optoelectronics.

PubMed

Kang, Lei; Lan, Shoufeng; Cui, Yonghao; Rodrigues, Sean P; Liu, Yongmin; Werner, Douglas H; Cai, Wenshan

2015-08-05

Chiral-selective non-linear optics and optoelectronic signal generation are demonstrated in an electrically active photonic metamaterial. The metamaterial reveals significant chiroptical responses in both harmonic generation and the photon drag effect, correlated to the resonance behavior in the linear regime. The multifunctional chiral metamaterial with dual electrical and optical functionality enables transduction of chiroptical responses to electrical signals for integrated photonics. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultracompact, High-Speed Field-Effect Optical Modulators (Research Topic 4.2 Optoelectronics)

DTIC Science & Technology

2017-11-29

Ultracompact, High-Speed Field-Effect Optical Modulators( Research Topic 4.2 Optoelectronics) The views, opinions and/or findings contained in this...report are those of the author(s) and should not contrued as an official Department of the Army position, policy or decision, unless so designated by...other documentation. 9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS (ES) U.S. Army Research Office P.O. Box 12211 Research Triangle Park

Polynomial law for controlling the generation of n-scroll chaotic attractors in an optoelectronic delayed oscillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Márquez, Bicky A., E-mail: bmarquez@ivic.gob.ve; Suárez-Vargas, José J., E-mail: jjsuarez@ivic.gob.ve; Ramírez, Javier A.

2014-09-01

Controlled transitions between a hierarchy of n-scroll attractors are investigated in a nonlinear optoelectronic oscillator. Using the system's feedback strength as a control parameter, it is shown experimentally the transition from Van der Pol-like attractors to 6-scroll, but in general, this scheme can produce an arbitrary number of scrolls. The complexity of every state is characterized by Lyapunov exponents and autocorrelation coefficients.

The concept of the set to objectification of LLLT exposure

NASA Astrophysics Data System (ADS)

Gryko, Lukasz; Gilewski, Marian; Szymanska, Justyna; Zajac, Andrzej; Rosc, Danuta

2013-01-01

In this article authors present the developed optoelectronic set for controlled, repeatable exposure by electromagnetic radiation of biological structures in the spectral band of tissue transmission window 600-1000 nm. The set allows for an objective selection and control of exposure parameters and comparison of results for variable energetic, spectral and polarization parameters of radiation beam. Possibility of objective diagnostics of tissue state during laser treatment was provided in the presented optoelectronic set.

Significant performance enhancement in photoconductive terahertz optoelectronics by incorporating plasmonic contact electrodes.

PubMed

Berry, C W; Wang, N; Hashemi, M R; Unlu, M; Jarrahi, M

2013-01-01

Even though the terahertz spectrum is well suited for chemical identification, material characterization, biological sensing and medical imaging, practical development of these applications has been hindered by attributes of existing terahertz optoelectronics. Here we demonstrate that the use of plasmonic contact electrodes can significantly mitigate the low-quantum efficiency performance of photoconductive terahertz optoelectronics. The use of plasmonic contact electrodes offers nanoscale carrier transport path lengths for the majority of photocarriers, increasing the number of collected photocarriers in a subpicosecond timescale and, thus, enhancing the optical-to-terahertz conversion efficiency of photoconductive terahertz emitters and the detection sensitivity of photoconductive terahertz detectors. We experimentally demonstrate 50 times higher terahertz radiation powers from a plasmonic photoconductive emitter in comparison with a similar photoconductive emitter with non-plasmonic contact electrodes, as well as 30 times higher terahertz detection sensitivities from a plasmonic photoconductive detector in comparison with a similar photoconductive detector with non-plasmonic contact electrodes.

Problems of systems dataware using optoelectronic measuring means of linear displacement

NASA Astrophysics Data System (ADS)

Bazykin, S. N.; Bazykina, N. A.; Samohina, K. S.

2017-10-01

Problems of the dataware of the systems with the use of optoelectronic means of the linear displacement are considered in the article. The classification of the known physical effects, realized by the means of information-measuring systems, is given. The organized analysis of information flows in technical systems from the standpoint of determination of inaccuracies of measurement and management was conducted. In spite of achieved successes in automation of machine-building and instruments-building equipment in the field of dataware of the technical systems, there are unresolved problems, concerning the qualitative aspect of the production process. It was shown that the given problem can be solved using optoelectronic lazer information-measuring systems. Such information-measuring systems are capable of not only executing the measuring functions, but also solving the problems of management and control during processing, thereby guaranteeing the quality of final products.

All-organic optoelectronic sensor for pulse oximetry

NASA Astrophysics Data System (ADS)

Lochner, Claire M.; Khan, Yasser; Pierre, Adrien; Arias, Ana C.

2014-12-01

Pulse oximetry is a ubiquitous non-invasive medical sensing method for measuring pulse rate and arterial blood oxygenation. Conventional pulse oximeters use expensive optoelectronic components that restrict sensing locations to finger tips or ear lobes due to their rigid form and area-scaling complexity. In this work, we report a pulse oximeter sensor based on organic materials, which are compatible with flexible substrates. Green (532 nm) and red (626 nm) organic light-emitting diodes (OLEDs) are used with an organic photodiode (OPD) sensitive at the aforementioned wavelengths. The sensor’s active layers are deposited from solution-processed materials via spin-coating and printing techniques. The all-organic optoelectronic oximeter sensor is interfaced with conventional electronics at 1 kHz and the acquired pulse rate and oxygenation are calibrated and compared with a commercially available oximeter. The organic sensor accurately measures pulse rate and oxygenation with errors of 1% and 2%, respectively.

Wafer bonded epitaxial templates for silicon heterostructures

DOEpatents

Atwater, Jr., Harry A.; Zahler, James M [Pasadena, CA; Morral, Anna Fontcubera I [Paris, FR

2008-03-11

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Terahertz optoelectronics with surface plasmon polariton diode.

PubMed

Vinnakota, Raj K; Genov, Dentcho A

2014-05-09

The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

Graphene and Carbon-Nanotube Nanohybrids Covalently Functionalized by Porphyrins and Phthalocyanines for Optoelectronic Properties.

PubMed

Wang, Aijian; Ye, Jun; Humphrey, Mark G; Zhang, Chi

2018-04-01

In recent years, there has been a rapid growth in studies of the optoelectronic properties of graphene, carbon nanotubes (CNTs), and their derivatives. The chemical functionalization of graphene and CNTs is a key requirement for the development of this field, but it remains a significant challenge. The focus here is on recent advances in constructing nanohybrids of graphene or CNTs covalently linked to porphyrins or phthalocyanines, as well as their application in nonlinear optics. Following a summary of the syntheses of nanohybrids constructed from graphene or CNTs and porphyrins or phthalocyanines, explicit intraconjugate electronic interactions between photoexcited porphyrins/phthalocyanines and graphene/CNTs are introduced classified by energy transfer, electron transfer, and charge transfer, and their optoelectronic applications are also highlighted. The major current challenges for the development of covalently linked nanohybrids of porphyrins or phthalocyanines and carbon nanostructures are also presented. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wafer bonded epitaxial templates for silicon heterostructures

NASA Technical Reports Server (NTRS)

Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)

2008-01-01

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Optically inactive defects in monolayer and bilayer phosphorene: A first-principles study

NASA Astrophysics Data System (ADS)

Huang, Ling-yi; Zhang, Xu; Zhang, Mingliang; Lu, Gang

2018-05-01

Many-body excitonic effect is crucial in two-dimensional (2D) materials and can significantly impact their optoelectronic properties. Because defects are inevitable in 2D materials, understanding how they influence the optical and excitonic properties of the 2D materials is of significant scientific and technological importance. Here we focus on intrinsic point defects in monolayer and bilayer phosphorene and examine whether and how their optoelectronic properties may be modified by the defects. Based on large-scale first-principles calculations, we have systematically explored the optical and excitonic properties of phosphorene in the presence and absence of the point defects. We find that the optical properties of bilayer phosphorene depend on the stacking order of the layers. More importantly, we reveal that the dominant point defects in few-layer phosphorene are optically inactive, which renders phosphorene particularly attractive in optoelectronic applications.

Planar-integrated single-crystalline perovskite photodetectors

PubMed Central

Saidaminov, Makhsud I.; Adinolfi, Valerio; Comin, Riccardo; Abdelhady, Ahmed L.; Peng, Wei; Dursun, Ibrahim; Yuan, Mingjian; Hoogland, Sjoerd; Sargent, Edward H.; Bakr, Osman M.

2015-01-01

Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals have been shown to overcome this problem and exhibit impressive improvements: low trap density, low intrinsic carrier concentration, high mobility, and long diffusion length that outperform perovskite-based thin films. These characteristics make the material ideal for realizing photodetection that is simultaneously fast and sensitive; unfortunately, these macroscopic single crystals cannot be grown on a planar substrate, curtailing their potential for optoelectronic integration. Here we produce large-area planar-integrated films made up of large perovskite single crystals. These crystalline films exhibit mobility and diffusion length comparable with those of single crystals. Using this technique, we produced a high-performance light detector showing high gain (above 104 electrons per photon) and high gain-bandwidth product (above 108 Hz) relative to other perovskite-based optical sensors. PMID:26548941

Growing perovskite into polymers for easy-processable optoelectronic devices

NASA Astrophysics Data System (ADS)

Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

2015-01-01

Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

Phase-locking dynamics in optoelectronic oscillator

NASA Astrophysics Data System (ADS)

Banerjee, Abhijit; Sarkar, Jayjeet; Das, NikhilRanjan; Biswas, Baidyanath

2018-05-01

This paper analyzes the phase-locking phenomenon in single-loop optoelectronic microwave oscillators considering weak and strong radio frequency (RF) signal injection. The analyses are made in terms of the lock-range, beat frequency and the spectral components of the unlocked-driven oscillator. The influence of RF injection signal on the frequency pulling of the unlocked-driven optoelectronic oscillator (OEO) is also studied. An approximate expression for the amplitude perturbation of the oscillator is derived and the influence of amplitude perturbation on the phase-locking dynamics is studied. It is shown that the analysis clearly reveals the phase-locking phenomenon and the associated frequency pulling mechanism starting from the fast-beat state through the quasi-locked state to the locked state of the pulled OEO. It is found that the unlocked-driven OEO output signal has a very non-symmetrical sideband distribution about the carrier. The simulation results are also given in partial support to the conclusions of the analysis.

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

PubMed Central

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-01-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics. PMID:27507171

``New'' energy states lead to phonon-less optoelectronic properties in nanostructured silicon

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Korgel, Brian; Nagpal, Prashant

2014-03-01

Silicon is arguably one of the most important technological material for electronic applications. However, indirect bandgap of silicon semiconductor has prevented optoelectronic applications due to phonon assistance required for photon light absorption/emission. Here we show, that previously unexplored surface states in nanostructured silicon can couple with quantum-confined energy levels, leading to phonon-less exciton-recombination and photoluminescence. We demonstrate size dependence (2.4 - 8.3 nm) of this coupling observed in small uniform silicon nanocrystallites, or quantum-dots, by direct measurements of their electronic density of states and low temperature measurements. To enhance the optical absorption of the these silicon quantum-dots, we utilize generation of resonant surface plasmon polariton waves, which leads to several fold increase in observed spectrally-resolved photocurrent near the quantum-confined bandedge states. Therefore, these enhanced light emission and absorption enhancement can have important implications for applications of nanostructured silicon for optoelectronic applications in photovoltaics and LEDs.

Growing perovskite into polymers for easy-processable optoelectronic devices

PubMed Central

Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

2015-01-01

Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition. PMID:25579988

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

NASA Astrophysics Data System (ADS)

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-08-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics.

Gallium Arsenide Monolithic Optoelectronic Circuits

NASA Astrophysics Data System (ADS)

Bar-Chaim, N.; Katz, J.; Margalit, S.; Ury, I.; Wilt, D.; Yariv, A.

1981-07-01

The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate.

Ultrafast characterization of optoelectronic devices and systems

NASA Astrophysics Data System (ADS)

Zheng, Xuemei

The recent fast growth in high-speed electronics and optoelectronics has placed demanding requirements on testing tools. Electro-optic (EO) sampling is a well-established technique for characterization of high-speed electronic and optoelectronic devices and circuits. However, with the progress in device miniaturization, lower power consumption (smaller signal), and higher throughput (higher clock rate), EO sampling also needs to be updated, accordingly, towards better signal-to-noise ratio (SNR) and sensitivity, without speed sacrifice. In this thesis, a novel EO sampler with a single-crystal organic 4-dimethylamino-N-methy-4-stilbazolium tosylate (DAST) as the EO sensor is developed. The system exhibits sub-picosecond temporal resolution, sub-millivolt sensitivity, and a 10-fold improvement on SNR, compared with its LiTaO3 counterpart. The success is attributed to the very high EO coefficient, the very low dielectric constant, and the fast response, coming from the major contribution of the pi-electrons in DAST. With the advance of ultrafast laser technology, low-noise and compact femtosecond fiber lasers have come to maturation and become light-source options for ultrafast metrology systems. We have successfully integrated a femtosecond erbium-doped-fiber laser into an EO sampler, making the system compact and very reliable. The fact that EO sampling is essentially an impulse-response measurement process, requires integration of ultrashort (sub-picosecond) impulse generation network with the device under test. We have implemented a reliable lift-off and transfer technique in order to obtain epitaxial-quality freestanding low-temperature-grown GaAs (LT-GaAs) thin-film photo-switches, which can be integrated with many substrates. The photoresponse of our freestanding LT-GaAs devices was thoroughly characterized with the help of our EO sampler. As fast as 360 fs full-width-at-half-maximum (FWHM) and >1 V electrical pulses were obtained, with quantum efficiency reaching 54%. The response time was found to not depend on either the device bias or excitation power. Nitrogen-implanted GaAs is a novel ion-implanted semiconductor. Its intrinsic property of high density of incorporated defects due to the implantation process makes it a promising candidate for ultrafast photodetection. A novel photodetector based on N+-GaAs has been successfully fabricated and its performance was characterized, using again our EO sampler. Our photodetectors, based on N+-GaAs, exhibit ˜2.1 ps FWHM photoresponse and very high sensitivity.

Exploration and practice in-class practice teaching mode

NASA Astrophysics Data System (ADS)

Zang, Xue-Ping; Wu, Wei-Feng

2017-08-01

According to the opto-electronic information science and engineering professional course characteristics and cultivate students' learning initiative, raised the teaching of photoelectric professional course introduce In-class practice teaching mode. By designing different In-class practice teaching content, the students' learning interest and learning initiative are improved, deepen students' understanding of course content and enhanced students' team cooperation ability. In-class practice teaching mode in the course of the opto-electronic professional teaching practice, the teaching effect is remarkable.

Optoelectronic Fibers via Selective Amplification of In-Fiber Capillary Instabilities.

PubMed

Wei, Lei; Hou, Chong; Levy, Etgar; Lestoquoy, Guillaume; Gumennik, Alexander; Abouraddy, Ayman F; Joannopoulos, John D; Fink, Yoel

2017-01-01

Thermally drawn metal-insulator-semiconductor fibers provide a scalable path to functional fibers. Here, a ladder-like metal-semiconductor-metal photodetecting device is formed inside a single silica fiber in a controllable and scalable manner, achieving a high density of optoelectronic components over the entire fiber length and operating at a bandwidth of 470 kHz, orders of magnitude larger than any other drawn fiber device. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coarse-Grained Molecular Simulation of the Hierarchical Self-Assembly of π-Conjugated Optoelectronic Peptides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mansbach, Rachael A.; Ferguson, Andrew L.

Self-assembled aggregates of peptides containing aromatic groups possess optoelectronic properties that make them attractive targets for the fabrication of biocompatible electronics. Molecular-level understanding of how the microscopic peptide chemistry influences the properties of the aggregates is vital for rational peptide design. We construct a coarse-grained model of Asp-Phe-Ala-Gly-OPV3-Gly-Ala-Phe-Asp (DFAG-OPV3-GAFD) peptides containing OPV3 (distyrylbenzene) π-conjugated cores explicitly parameterized against all-atom calculations and perform molecular dynamics simulations of the self-assembly of hundreds of molecules over hundreds of nanoseconds. We observe a hierarchical assembly mechanism wherein ~2-8 peptides assemble into stacks with aligned aromatic cores that subsequently form elliptical aggregates and ultimately amore » branched network with a fractal dimensionality of ~1.5. The assembly dynamics are well described by a Smoluchowski coagulation process for which we extract rate constants from the molecular simulations to both furnish insight into the microscopic assembly kinetics and extrapolate our aggregation predictions to time and length scales beyond the reach of molecular simulation. Lastly, this study presents new molecular-level understanding of the morphology and dynamics of the spontaneous self-assembly of DFAG-OPV3-GAFD peptides and establishes a systematic protocol to develop coarse-grained models of optoelectronic peptides for the exploration and design of π-conjugated peptides with tunable optoelectronic properties.« less

Atomically thin p-n junctions with van der Waals heterointerfaces.

PubMed

Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M; Chen, Wenchao; Li, Yilei; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Nuckolls, Colin; Heinz, Tony F; Guo, Jing; Hone, James; Kim, Philip

2014-09-01

Semiconductor p-n junctions are essential building blocks for electronic and optoelectronic devices. In conventional p-n junctions, regions depleted of free charge carriers form on either side of the junction, generating built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes influenced by the spatial extent of this depletion region. With the advent of atomically thin van der Waals materials and their heterostructures, it is now possible to realize a p-n junction at the ultimate thickness limit. Van der Waals junctions composed of p- and n-type semiconductors--each just one unit cell thick--are predicted to exhibit completely different charge transport characteristics than bulk heterojunctions. Here, we report the characterization of the electronic and optoelectronic properties of atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides. We observe gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances the collection of the photoexcited carriers. The atomically scaled van der Waals p-n heterostructures presented here constitute the ultimate functional unit for nanoscale electronic and optoelectronic devices.

Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

2018-01-01

2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

Coarse-Grained Molecular Simulation of the Hierarchical Self-Assembly of π-Conjugated Optoelectronic Peptides

DOE PAGES

Mansbach, Rachael A.; Ferguson, Andrew L.

2017-02-10

Self-assembled aggregates of peptides containing aromatic groups possess optoelectronic properties that make them attractive targets for the fabrication of biocompatible electronics. Molecular-level understanding of how the microscopic peptide chemistry influences the properties of the aggregates is vital for rational peptide design. We construct a coarse-grained model of Asp-Phe-Ala-Gly-OPV3-Gly-Ala-Phe-Asp (DFAG-OPV3-GAFD) peptides containing OPV3 (distyrylbenzene) π-conjugated cores explicitly parameterized against all-atom calculations and perform molecular dynamics simulations of the self-assembly of hundreds of molecules over hundreds of nanoseconds. We observe a hierarchical assembly mechanism wherein ~2-8 peptides assemble into stacks with aligned aromatic cores that subsequently form elliptical aggregates and ultimately amore » branched network with a fractal dimensionality of ~1.5. The assembly dynamics are well described by a Smoluchowski coagulation process for which we extract rate constants from the molecular simulations to both furnish insight into the microscopic assembly kinetics and extrapolate our aggregation predictions to time and length scales beyond the reach of molecular simulation. Lastly, this study presents new molecular-level understanding of the morphology and dynamics of the spontaneous self-assembly of DFAG-OPV3-GAFD peptides and establishes a systematic protocol to develop coarse-grained models of optoelectronic peptides for the exploration and design of π-conjugated peptides with tunable optoelectronic properties.« less

Nanoparticle-Enhanced Silver-Nanowire Plasmonic Electrodes for High-Performance Organic Optoelectronic Devices.

PubMed

Kim, Taehyo; Kang, Saewon; Heo, Jungwoo; Cho, Seungse; Kim, Jae Won; Choe, Ayoung; Walker, Bright; Shanker, Ravi; Ko, Hyunhyub; Kim, Jin Young

2018-05-21

Improved performance in plasmonic organic solar cells (OSCs) and organic light-emitting diodes (OLEDs) via strong plasmon-coupling effects generated by aligned silver nanowire (AgNW) transparent electrodes decorated with core-shell silver-silica nanoparticles (Ag@SiO 2 NPs) is demonstrated. NP-enhanced plasmonic AgNW (Ag@SiO 2 NP-AgNW) electrodes enable substantially enhanced radiative emission and light absorption efficiency due to strong hybridized plasmon coupling between localized surface plasmons (LSPs) and propagating surface plasmon polaritons (SPPs) modes, which leads to improved device performance in organic optoelectronic devices (OODs). The discrete dipole approximation (DDA) calculation of the electric field verifies a strongly enhanced plasmon-coupling effect caused by decorating core-shell Ag@SiO 2 NPs onto the AgNWs. Notably, an electroluminescence efficiency of 25.33 cd A -1 (at 3.2 V) and a power efficiency of 25.14 lm W -1 (3.0 V) in OLEDs, as well as a power conversion efficiency (PCE) value of 9.19% in OSCs are achieved using hybrid Ag@SiO 2 NP-AgNW films. These are the highest values reported to date for optoelectronic devices based on AgNW electrodes. This work provides a new design platform to fabricate high-performance OODs, which can be further explored in various plasmonic and optoelectronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optoelectronic simulation of GaAs solar cells with angularly selective filters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kraus, Tobias, E-mail: tobias.kraus@ise.fraunhofer.de; Höhn, Oliver; Hauser, Hubert

We discuss the influence of angularly selective filters on thin film gallium arsenide solar cells. For this reason, the detailed balance model was refined to fit our needs with respect to Auger recombination, reflection, transmission, and realistic absorption. For calculating real systems, an approach was made to include optical effects of angularly selective filters into electron-hole dynamic equations implemented in PC1D, a one dimensional solar cell calculation tool. With this approach, we find a relative V{sub oc} increase of 5% for an idealized 100 nm GaAs cell, including Auger recombination.

Ultra-High-Density Ferroelectric Memories

NASA Technical Reports Server (NTRS)

Thakoor, Sarita

1995-01-01

Features include fast input and output via optical fibers. Memory devices of proposed type include thin ferroelectric films in which data stored in form of electric polarization. Assuming one datum stored in region as small as polarization domain, sizes of such domains impose upper limits on achievable storage densities. Limits approach 1 terabit/cm(Sup2) in all-optical versions of these ferroelectric memories and exceeds 1 gigabit/cm(Sup2) in optoelectronic versions. Memories expected to exhibit operational lives of about 10 years, input/output times of about 10 ns, and fatigue lives of about 10(Sup13) cycles.

Integrated Graphene-Based Optoelectronic Devices Used for Ultrafast Optical-THz Photodetectors, Modulators and Emitters

DTIC Science & Technology

2015-04-03

08 and AFRL/ CA policy clarification memorandum dated 16 Jan 09. This report is available to the general public, including foreign nationals. Copies... doped graphene micro-ribbon array and a quantum-well electron gas sitting at an interface between a half-space of air and another half-space of a... doped semiconductor substrate which supports a surface-plasmon mode in our system. The coupling between a spatially-modulated total electromagnetic

Assessment of capabilities of lidar systems in day-and night-time under different atmospheric and internal-noise conditions

NASA Astrophysics Data System (ADS)

Agishev, Ravil; Comerón, Adolfo

2018-04-01

As an application of the dimensionless parameterization concept proposed earlier for the characterization of lidar systems, the universal assessment of lidar capabilities in day and night conditions is considered. The dimensionless parameters encapsulate the atmospheric conditions, the lidar optical and optoelectronic characteristics, including the photodetector internal noise, and the sky background radiation. Approaches to ensure immunity of the lidar system to external background radiation are discussed.

Micro-optical-mechanical system photoacoustic spectrometer

DOEpatents

Kotovsky, Jack; Benett, William J.; Tooker, Angela C.; Alameda, Jennifer B.

2013-01-01

All-optical photoacoustic spectrometer sensing systems (PASS system) and methods include all the hardware needed to analyze the presence of a large variety of materials (solid, liquid and gas). Some of the all-optical PASS systems require only two optical-fibers to communicate with the opto-electronic power and readout systems that exist outside of the material environment. Methods for improving the signal-to-noise are provided and enable mirco-scale systems and methods for operating such systems.