The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

NASA Astrophysics Data System (ADS)

Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

2016-12-01

Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

Dark current in multilayer stabilized amorphous selenium based photoconductive x-ray detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frey, Joel B.; Belev, George; Kasap, Safa O.

2012-07-01

We report on experimental results which show that the dark current in n-i-p structured, amorphous selenium films is independent of i-layer thickness in samples with consistently thick blocking layers. We have observed, however, a strong dependence on the n-layer thickness and positive contact metal chosen. These results indicate that the dominant source of the dark current is carrier injection from the contacts and any contribution from carriers thermally generated in the bulk of the photoconductive layer is negligible. This conclusion is supported by a description of the dark current transients at different applied fields by a model which assumes onlymore » carrier emission over a Schottky barrier. This model also predicts that while hole injection is initially dominant, some time after the application of the bias, electron injection may become the dominant source of dark current.« less

Low-Temperature Growth of Amorphous Silicon Films and Direct Fabrication of Solar Cells on Flexible Polyimide and Photo-Paper Substrates

NASA Astrophysics Data System (ADS)

Madaka, Ramakrishna; Kanneboina, Venkanna; Agarwal, Pratima

2018-05-01

Direct deposition of hydrogenated amorphous silicon (a-Si:H) thin films and fabrication of solar cells on polyimide (PI) and photo-paper (PP) substrates using a rf-plasma-enhanced chemical vapor deposition technique is reported. Intrinsic amorphous silicon films were deposited on PI and PP substrates by varying the substrate temperature (T s) over 70-150°C to optimize the deposition parameters for best quality films. The films deposited on both PI and PP substrates at a temperature as low as 70°C showed a photosensitivity (σ ph/σ d) of nearly 4 orders of magnitude which increased to 5-6 orders of magnitude when the substrate temperature was increased to 130-150°C. The increase in σ ph/σ d is due to the presence of a few nanometer-sized crystallites embedded in the film. Solar cells (n-i-p) were fabricated directly on PI, PP and Corning 1737 glass (Corning) at 150°C for different thicknesses of an intrinsic amorphous silicon layer (i-layer). With the increase in i-layer thickness from 330 nm to 700 nm, the solar cell efficiency was found to increase from 3.81% to 5.02% on the Corning substrate whereas on the flexible PI substrate an increase from 3.38% to 4.38% was observed. On the other hand, in the case of cells on PP, the i-layer thickness was varied from 200 nm to 700 nm and the best cell efficiency 1.54% was obtained for the 200-nm-thick i-layer. The fabrication of a-Si (n-i-p) solar cells on photo-paper is presented for the first time.

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

NASA Astrophysics Data System (ADS)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

NASA Astrophysics Data System (ADS)

Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

2017-04-01

Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

High mobility, dual layer, c-axis aligned crystalline/amorphous IGZO thin film transistor

NASA Astrophysics Data System (ADS)

Chung, Chen-Yang; Zhu, Bin; Greene, Raymond G.; Thompson, Michael O.; Ast, Dieter G.

2015-11-01

We demonstrate a dual layer IGZO thin film transistor (TFT) consisting of a 310 °C deposited c-axis aligned crystal (CAAC) 20 nm thick channel layer capped by a second, 30 nm thick, 260 °C deposited amorphous IGZO layer. The TFT exhibits a saturation field-effect mobility of ˜20 cm2/V s, exceeding the mobility of 50 nm thick single layer reference TFTs fabricated with either material. The deposition temperature of the second layer influences the mobility of the underlying transport layer. When the cap layer is deposited at room temperature (RT), the mobility in the 310 °C deposited CAAC layer is initially low (6.7 cm2/V s), but rises continuously with time over 58 days to 20.5 cm2/V s, i.e., to the same value as when the second layer is deposited at 260 °C. This observation indicates that the two layers equilibrate at RT with a time constant on the order of 5 × 106 s. An analysis based on diffusive transport indicates that the room temperature diffusivity must be of the order of 1 × 10-18 cm2 s-1 with an activation enthalpy EA < 0.2 eV for the mobility limiting species. The findings are consistent with a hypothesis that the amorphous layer deposited on top of the CAAC has a higher solubility for impurities and/or structural defects than the underlying nanocrystalline transport layer, and that the equilibration of the mobility limiting species is rate limited by hydrogen diffusion, whose known diffusivity fits these estimates.

Thin-film limit formalism applied to surface defect absorption.

PubMed

Holovský, Jakub; Ballif, Christophe

2014-12-15

The thin-film limit is derived by a nonconventional approach and equations for transmittance, reflectance and absorptance are presented in highly versatile and accurate form. In the thin-film limit the optical properties do not depend on the absorption coefficient, thickness and refractive index individually, but only on their product. We show that this formalism is applicable to the problem of ultrathin defective layer e.g. on a top of a layer of amorphous silicon. We develop a new method of direct evaluation of the surface defective layer and the bulk defects. Applying this method to amorphous silicon on glass, we show that the surface defective layer differs from bulk amorphous silicon in terms of light soaking.

Graphene as a transparent electrode for amorphous silicon-based solar cells

NASA Astrophysics Data System (ADS)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-06-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

Domain epitaxy for thin film growth

DOEpatents

Narayan, Jagdish

2005-10-18

A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

Ultrathin phase-change coatings on metals for electrothermally tunable colors

NASA Astrophysics Data System (ADS)

Bakan, Gokhan; Ayas, Sencer; Saidzoda, Tohir; Celebi, Kemal; Dana, Aykutlu

2016-08-01

Metal surfaces coated with ultrathin lossy dielectrics enable color generation through strong interferences in the visible spectrum. Using a phase-change thin film as the coating layer offers tuning the generated color by crystallization or re-amorphization. Here, we study the optical response of surfaces consisting of thin (5-40 nm) phase-changing Ge2Sb2Te5 (GST) films on metal, primarily Al, layers. A color scale ranging from yellow to red to blue that is obtained using different thicknesses of as-deposited amorphous GST layers turns dim gray upon annealing-induced crystallization of the GST. Moreover, when a relatively thick (>100 nm) and lossless dielectric film is introduced between the GST and Al layers, optical cavity modes are observed, offering a rich color gamut at the expense of the angle independent optical response. Finally, a color pixel structure is proposed for ultrahigh resolution (pixel size: 5 × 5 μm2), non-volatile displays, where the metal layer acting like a mirror is used as a heater element. The electrothermal simulations of such a pixel structure suggest that crystallization and re-amorphization of the GST layer using electrical pulses are possible for electrothermal color tuning.

Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

PubMed

Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

2014-12-01

The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions.

Wide-angle light-trapping electrode for photovoltaic cells.

PubMed

Omelyanovich, Mikhail M; Simovski, Constantin R

2017-10-01

In this Letter, we experimentally show that a submicron layer of a transparent conducting oxide that may serve a top electrode of a photovoltaic cell based on amorphous silicon when properly patterned by notches becomes an efficient light-trapping structure. This is so for amorphous silicon thin-film solar cells with properly chosen thicknesses of the active layers (p-i-n structure with optimal thicknesses of intrinsic and doped layers). The nanopatterned layer of transparent conducting oxide reduces both the light reflectance from the photovoltaic cell and transmittance through the photovoltaic layers for normal incidence and for all incidence angles. We explain the physical mechanism of our light-trapping effect, prove that this mechanism is realized in our structure, and show that the nanopatterning is achievable in a rather easy and affordable way that makes our method of solar cell enhancement attractive for industrial adaptations.

Damage Tolerance and Mechanics of Interfaces in Nanostructured Metals

NASA Astrophysics Data System (ADS)

Foley, Daniel J.

The concept of interface driven properties in crystalline metals has been one of the most intensely discussed topics in materials science for decades. Since the 1980s researchers have been exploring the concept of grain boundary engineering as route for tuning properties such as fracture toughness and irradiation resistance. This is especially true in ultra-fine grained and nanocrystalline materials where grain boundary mediated properties become dominant. More recently, materials composed of hierarchical nanostructures, such as amorphous-crystalline nanolaminates, have attracted considerable attention due to their favorable properties, ease of manufacture and highly tunable microstructure. While both grain boundary engineering and hierarchical nanostructures have shown promise there are still questions remaining regarding the role of specific attributes of the microstructure (such as grain boundaries, grain/layer size and inter/intralayer morphology) in determining material properties. This thesis attempts to address these questions by using atomistic simulations to perform deformation and damage loading studies on a series of nanolaminate and bicrystalline structures. During the course of this thesis the roles of layer thickness, interlayer structure and interlayer chemistry on the mechanical properties of Ni-NiX amorphous-crystalline nanolaminates were explored using atomistic simulations. This thesis found that layer thickness/thickness ratio and amorphous layer chemistry play a crucial role in yield strength and Young's modulus. Analysis of the deformation mechanisms at the atomic scale revealed that structures containing single crystalline, crystalline layers undergo plastic deformation when shear transformation zones form in the amorphous layer and impinge on the amorphous-crystalline interface, leading to dislocation emission. However, structures containing nanocrystalline, crystalline layers (both equiaxed and columnar nanocrystalline) undergo plastic deformation through a combination of grain boundary sliding and grain boundary mediated dislocation nucleation. Since grain boundaries were found to play a critical role as sources and sinks for dislocations in amorphous-crystalline nanolaminates a follow-up study on the effect of grain boundary character on damage accumulation/accommodation in copper symmetric tilt grain boundaries was performed. This study found that grain boundaries will become saturated with damage, a state where grain boundary energy and grain boundary free volume oscillate about a plateau during continuous defect loading (vacancy, interstitial and frenkel pair loading were all considered). Further, grain boundary character (specifically equilibrium grain boundary energy) was strongly correlated to the damage accommodation behavior of grain boundaries in copper. Finally, a study that attempted to link grain boundary damage saturation behavior to variations in grain boundary mechanical properties was performed. This study found no direct relationships between grain boundary damage saturation behavior and variations in grain boundary properties. The results of this thesis provide researchers with several strategies for tuning the properties of amorphous-crystalline nanolaminates. These strategies include manipulated bulk attributes such as layer thickness and morphology as well as manipulation of microscale attributes such as grain boundary engineering. Finally, this thesis provides valuable insight into the damage loading/accommodation behavior of FCC symmetric tilt grain boundaries.

Naturally weathered feldspar surfaces in the Navajo Sandstone aquifer, Black Mesa, Arizona: Electron microscopic characterization

NASA Astrophysics Data System (ADS)

Zhu, Chen; Veblen, David R.; Blum, Alex E.; Chipera, Stephen J.

2006-09-01

Naturally weathered feldspar surfaces in the Jurassic Navajo Sandstone at Black Mesa, Arizona, was characterized with high-resolution transmission and analytical electron microscope (HRTEM-AEM) and field emission gun scanning electron microscope (FEG-SEM). Here, we report the first HRTEM observation of a 10-nm thick amorphous layer on naturally weathered K-feldspar in currently slightly alkaline groundwater. The amorphous layer is probably deficient in K and enriched in Si. In addition to the amorphous layer, the feldspar surfaces are also partially coated with tightly adhered kaolin platelets. Outside of the kaolin coatings, feldspar grains are covered with a continuous 3-5 μm thick layer of authigenic smectite, which also coats quartz and other sediment grains. Authigenic K-feldspar overgrowth and etch pits were also found on feldspar grains. These characteristics of the aged feldspar surfaces accentuate the differences in reactivity between the freshly ground feldspar powders used in laboratory experiments and feldspar grains in natural systems, and may partially contribute to the commonly observed apparent laboratory-field dissolution rate discrepancy. At Black Mesa, feldspars in the Navajo Sandstone are dissolving at ˜10 5 times slower than laboratory rate at comparable temperature and pH under far from equilibrium condition. The tightly adhered kaolin platelets reduce the feldspar reactive surface area, and the authigenic K-feldspar overgrowth reduces the feldspar reactivity. However, the continuous smectite coating layer does not appear to constitute a diffusion barrier. The exact role of the amorphous layer on feldspar dissolution kinetics depends on the origin of the layer (leached layer versus re-precipitated silica), which is uncertain at present. However, the nanometer thin layer can be detected only with HRTEM, and thus our study raises the possibility of its wide occurrence in geological systems. Rate laws and proposed mechanisms should consider the possibility of this amorphous layer on feldspar surface.

Naturally weathered feldspar surfaces in the Navajo Sandstone aquifer, Black Mesa, Arizona: Electron microscopic characterization

USGS Publications Warehouse

Zhu, Chen; Veblen, D.R.; Blum, A.E.; Chipera, S.J.

2006-01-01

Naturally weathered feldspar surfaces in the Jurassic Navajo Sandstone at Black Mesa, Arizona, was characterized with high-resolution transmission and analytical electron microscope (HRTEM-AEM) and field emission gun scanning electron microscope (FEG-SEM). Here, we report the first HRTEM observation of a 10-nm thick amorphous layer on naturally weathered K-feldspar in currently slightly alkaline groundwater. The amorphous layer is probably deficient in K and enriched in Si. In addition to the amorphous layer, the feldspar surfaces are also partially coated with tightly adhered kaolin platelets. Outside of the kaolin coatings, feldspar grains are covered with a continuous 3-5 ??m thick layer of authigenic smectite, which also coats quartz and other sediment grains. Authigenic K-feldspar overgrowth and etch pits were also found on feldspar grains. These characteristics of the aged feldspar surfaces accentuate the differences in reactivity between the freshly ground feldspar powders used in laboratory experiments and feldspar grains in natural systems, and may partially contribute to the commonly observed apparent laboratory-field dissolution rate discrepancy. At Black Mesa, feldspars in the Navajo Sandstone are dissolving at ???105 times slower than laboratory rate at comparable temperature and pH under far from equilibrium condition. The tightly adhered kaolin platelets reduce the feldspar reactive surface area, and the authigenic K-feldspar overgrowth reduces the feldspar reactivity. However, the continuous smectite coating layer does not appear to constitute a diffusion barrier. The exact role of the amorphous layer on feldspar dissolution kinetics depends on the origin of the layer (leached layer versus re-precipitated silica), which is uncertain at present. However, the nanometer thin layer can be detected only with HRTEM, and thus our study raises the possibility of its wide occurrence in geological systems. Rate laws and proposed mechanisms should consider the possibility of this amorphous layer on feldspar surface. ?? 2006 Elsevier Inc. All rights reserved.

Nanocrystalline-to-amorphous transition in nanolaminates grown by low temperature atomic layer deposition and related mechanical properties

NASA Astrophysics Data System (ADS)

Raghavan, R.; Bechelany, M.; Parlinska, M.; Frey, D.; Mook, W. M.; Beyer, A.; Michler, J.; Utke, I.

2012-05-01

We report on a comprehensive structural and nanoindentation study of nanolaminates of Al2O3 and ZnO synthesized by atomic layer deposition (ALD). By reducing the bilayer thickness from 50 nm to below 1 nm, the nanocrystal size could be controlled in the nanolaminate structure. The softer and more compliant response of the multilayers as compared to the single layers of Al2O3 and ZnO is attributed to the structural change from nanocrystalline to amorphous at smaller bilayer thicknesses. It is also shown that ALD is a unique technique for studying the inverse Hall-Petch softening mechanism (E. Voce and D. Tabor, J. Inst. Metals 79(12), 465 (1951)) related to grain size effects in nanomaterials.

Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers.

PubMed

Wang, J Y; Wang, Z M; Jeurgens, L P H; Mittemeijer, E J

2009-06-01

Aluminium-induced crystallization (ALIC) of amorphous Si and subsequent layer exchange (ALILE) occur in amorphous-Si/polycrystalline-Al bilayers (a-Si/c-Al) upon annealing at temperatures as low as 165 degrees C and were studied by X-ray diffraction and Auger electron spectroscopic depth profiling. It follows that: (i) nucleation of Si crystallization is initiated at Al grain boundaries and not at the a-Si/c-Al interface; (ii) low-temperature annealing results in a large Si grain size in the continuous c-Si layer produced by ALILE. Thermodynamic model calculations show that: (i) Si can "wet" the Al grain boundaries due to the favourable a-Si/c-Al interface energy (as compared to the Al grain-boundary energy); (ii) the wetting-induced a-Si layer at the Al grain boundary can maintain its amorphous state only up to a critical thickness, beyond which nucleation of Si crystallization takes place; and (iii) a tiny driving force controls the kinetics of the layer exchange.

Quality-enhanced In{sub 0.3}Ga{sub 0.7}As film grown on GaAs substrate with an ultrathin amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Fangliang; Li, Guoqiang, E-mail: msgli@scut.edu.cn

2014-01-27

Using low-temperature molecular beam epitaxy, amorphous In{sub 0.6}Ga{sub 0.4}As layers have been grown on GaAs substrates to act as buffer layers for the subsequent epitaxial growth of In{sub 0.3}Ga{sub 0.7}As films. It is revealed that the crystallinity of as-grown In{sub 0.3}Ga{sub 0.7}As films is strongly affected by the thickness of the large-mismatched amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer. Given an optimized thickness of 2 nm, this amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer can efficiently release the misfit strain between the In{sub 0.3}Ga{sub 0.7}As epi-layer and the GaAs substrate, trap the threading and misfit dislocations from propagating to the following In{sub 0.3}Ga{submore » 0.7}As epi-layer, and reduce the surface fluctuation of the as-grown In{sub 0.3}Ga{sub 0.7}As, leading to a high-quality In{sub 0.3}Ga{sub 0.7}As film with competitive crystallinity to that grown on GaAs substrate using compositionally graded In{sub x}Ga{sub 1-x}As metamorphic buffer layers. Considering the complexity of the application of the conventional In{sub x}Ga{sub 1-x}As graded buffer layers, this work demonstrates a much simpler approach to achieve high-quality In{sub 0.3}Ga{sub 0.7}As film on GaAs substrate and, therefore, is of huge potential for the InGaAs-based high-efficiency photovoltaic industry.« less

The magnetic properties of a magnetic detector using oxidized amorphous Co 95- xFe 5(BSi) x alloys

NASA Astrophysics Data System (ADS)

Ahn, S. J.; Kim, C. K.; Kim, S. J.; Choi, D. K.; O'Handley, R. C.

2000-07-01

A comparative oxidation study of several amorphous Co 75- xFe 5(BSi) 20+ x alloys was carried out. Reentrant magnetization behavior and field-induced anisotropy which are of a critical importance for a magnetic detector were obtained after oxidation of the amorphous Co-rich ribbons. During this oxidation, the ribbons develop surface oxides which are primarily nonmagnetic borosilicate or a combination of borosilicate and magnetic oxides such CoO or FeO. Beneath this lies a 100-1000 Å thick Co-rich magnetic alloy which may be either HCP or FCC in its crystal structure. The thickness of the Co-crystallized layer is determined by the type of the surface oxides. The oxidation products such as appear to affect the reentrant magnetization behavior of Co-rich amorphous alloys significantly. We have determined the amount of metalloids (a critical concentration of B and Si) which is necessary to form a continuous layer of the most thermodynamically stable oxide, in our case borosilicate, on the surface. We also observed that there is a good correlation between reentrant magnetization and the thickness of Co layer. The best reentrant M- H loop for the magnetic detector was obtained in ribbons with a surface borate-rich borosilicate since it ensures conditions such as (1) metalloid depletion in the substrate and (2) formation of oxygen impurity faults in Co grains that are required for strong reentrant magnetization behavior.

Anomalous electron transport in metal/carbon multijunction devices by engineering of the carbon thickness and selecting metal layer

NASA Astrophysics Data System (ADS)

Dwivedi, Neeraj; Dhand, Chetna; Rawal, Ishpal; Kumar, Sushil; Malik, Hitendra K.; Lakshminarayanan, Rajamani

2017-06-01

A longstanding concern in the research of amorphous carbon films is their poor electrical conductivity at room temperature which constitutes a major barrier for the development of cost effective electronic and optoelectronic devices. Here, we propose metal/carbon hybrid multijunction devices as a promising facile way to overcome room temperature electron transport issues in amorphous carbon films. By the tuning of carbon thickness and swapping metal layers, we observe giant (upto ˜7 orders) reduction of electrical resistance in metal/carbon multijunction devices with respect to monolithic amorphous carbon device. We engineer the maximum current (electrical resistance) from about 10-7 to 10-3 A (˜107 to 103 Ω) in metal (Cu or Ti)/carbon hybrid multijunction devices with a total number of 10 junctions. The introduction of thin metal layers breaks the continuity of relatively higher resistance carbon layer as well as promotes the nanostructuring of carbon. These contribute to low electrical resistance of metal/carbon hybrid multijunction devices, with respect to monolithic carbon device, which is further reduced by decreasing the thickness of carbon layers. We also propose and discuss equivalent circuit model to explain electrical resistance in monolithic carbon and metal/carbon multijunction devices. Cu/carbon multijunction devices display relatively better electrical transport than Ti/carbon devices owing to low affinity of Cu with carbon that restricts carbide formation. We also observe that in metal/carbon multijunction devices, the transport mechanism changes from Poole-Frenkel/Schottky model to the hopping model with a decrease in carbon thickness. Our approach opens a new route to develop carbon-based inexpensive electronic and optoelectronic devices.

Crystal Orientation Effect on the Subsurface Deformation of Monocrystalline Germanium in Nanometric Cutting.

PubMed

Lai, Min; Zhang, Xiaodong; Fang, Fengzhou

2017-12-01

Molecular dynamics simulations of nanometric cutting on monocrystalline germanium are conducted to investigate the subsurface deformation during and after nanometric cutting. The continuous random network model of amorphous germanium is established by molecular dynamics simulation, and its characteristic parameters are extracted to compare with those of the machined deformed layer. The coordination number distribution and radial distribution function (RDF) show that the machined surface presents the similar amorphous state. The anisotropic subsurface deformation is studied by nanometric cutting on the (010), (101), and (111) crystal planes of germanium, respectively. The deformed structures are prone to extend along the 110 slip system, which leads to the difference in the shape and thickness of the deformed layer on various directions and crystal planes. On machined surface, the greater thickness of subsurface deformed layer induces the greater surface recovery height. In order to get the critical thickness limit of deformed layer on machined surface of germanium, the optimized cutting direction on each crystal plane is suggested according to the relevance of the nanometric cutting to the nanoindentation.

Physical criteria for the interface passivation layer in hydrogenated amorphous/crystalline silicon heterojunction solar cell

NASA Astrophysics Data System (ADS)

Zhao, Lei; Wang, Guanghong; Diao, Hongwei; Wang, Wenjing

2018-01-01

AFORS-HET (automat for simulation of heterostructures) simulation was utilized to explore the physical criteria for the passivation layer in hydrogenated amorphous/crystalline silicon heterojunction (SHJ) solar cells, by systematically investigating the solar cell current density-voltage (J-V) performance as a function of the interface defect density (D it) at the passivation layer/c-Si hetero-interface, the thickness (t) of the passivation layer, the bandgap (E g) of the passivation layer, and the density of dangling bond states (D db)/band tail states (D bt) in the band gap of the passivation layer. The corresponding impact regulations were presented clearly. Except for D it, the impacts of D db, D bt and E g are strongly dependent on the passivation layer thickness t. While t is smaller than 4-5 nm, the solar cell performance is less sensitive to the variation of D db, D bt and E g. Low D it at the a-Si:H/c-Si interface and small thickness t are the critical criteria for the passivation layer in such a case. However, if t has to be relatively larger, the microstructure, i.e. the material quality, including D db, D bt and E g, of the passivation layer should be controlled carefully. The mechanisms involved were analyzed and some applicable methods to prepare the passivation layer were proposed.

Modification of the Near Surface Region Metastable Phases and Ion Induced Reactions

DTIC Science & Technology

1984-02-03

cell Si Dave Lilienfeld - amorphous Si layer thickness Au diffusion in metallic glasses Dave Lilienfeld & - low temperature Cu diffusion in Si Tim...Sullivan Fritz Stafford - defect characterization in implanted & annealed silicon-on-sapphire Peter Zielinski - Composition of CuZr metallic glass...ribbons 5. Prof. Johnson Dave Kuhn - measurement of Pd layer thickness Alexandra Elve - hydrogen profiles in metals Lauren Heitner - hydrogen diffusion in

Influences of carbon content and coating carbon thickness on properties of amorphous CoSnO3@C composites as anode materials for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Fan, Fuqiang; Fang, Guoqing; Zhang, Ruixue; Xu, Yanhui; Zheng, Junwei; Li, Decheng

2014-08-01

A series of core-shell carbon coated amorphous CoSnO3 (CoSnO3@C) with different carbon content are synthesized. Effects of carbon content and coating carbon thickness on the physical and electrochemical performances of the samples were studied in detail. The samples were analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM), thermal gravimetric analysis (TGA), galvanostatic charge-discharge and AC impedance spectroscopy, respectively. The results indicate that controlling the concentration of aqueous glucose solution influences the generation of in-situ carbon layer thickness. The optimal concentration of aqueous glucose solution, carbon content and carbon layer thickness are suggested as 0.25 M, 35.1% and 20 nm, respectively. CoSnO3@C composite prepared under the optimal conditions exhibits excellent cycling performance, whose reversible capacity could reach 491 mA h g-1 after 100 cycles.

Channel layer thickness dependence of In-Ti-Zn-O thin-film transistors fabricated using pulsed laser deposition

NASA Astrophysics Data System (ADS)

Zhang, Q.; Shan, F. K.; Liu, G. X.; Liu, A.; Lee, W. J.; Shin, B. C.

2014-05-01

Amorphous indium-titanium-zinc-oxide (ITZO) thin-film transistors (TFTs) with various channel thicknesses were fabricated at room temperature by using pulsed laser deposition. The channel layer thickness (CLT) dependence of the TFTs was investigated. All the ITZO thin films were amorphous, and the surface roughnesses decreased slightly first and then increased with increasing CLT. With increasing CLT from 35 to 140 nm, the on/off current ratio and the field-effect mobility increased, and the subthreshold swing decreased. The TFT with a CLT of 210 nm exhibited the worst performance, while the ITZO TFT with a CLT of 140 nm exhibited the best performance with a subthreshold voltage of 2.86 V, a mobility of 53.9 cm2V-1s-1, a subthreshold swing of 0.29 V/decade and an on/off current ratio of 109.

Use of manometric temperature measurements (MTM) to characterize the freeze-drying behavior of amorphous protein formulations.

PubMed

Johnson, Robert E; Oldroyd, Megan E; Ahmed, Saleem S; Gieseler, Henning; Lewis, Lavinia M

2010-06-01

The freeze-drying behavior and cake morphology of a model protein in an amorphous formulation were studied at varying protein concentrations using conservative (-25 degrees C) and aggressive (+25 degrees C) shelf temperatures at constant chamber pressure during primary drying. The two cycles were characterized by manometric temperature measurements (MTM) in a SMART freeze dryer that estimates the sublimation rate (dm/dt), product temperature at the freeze-drying front (T(p-MTM)) and product resistance (R(p)) during a run. The calculated sublimation rates (dm/dt) were 3-4 times faster in the aggressive cycle compared to the conservative cycle. For conservatively dried cakes R(p) increased with both dry layer thickness and protein concentration. For aggressively dried cakes (where freeze-drying occurs at the edge of microcollapse), R(p) also increased with protein concentration but was independent of the dry layer thickness. The sublimation rate was influenced by R(p), dry layer thickness and T(p-MTM) in the conservative cycle, but was governed mainly by T(p-MTM) in the aggressive cycle, where R(p) is independent of the dry layer thickness. The aggressively dried cakes had a more open and porous structure compared to their conservatively dried counterparts. (c) 2009 Wiley-Liss, Inc. and the American Pharmacists Association

Dose dependence of radiation damage in nano-structured amorphous SiOC/crystalline Fe composite

DOE PAGES

Su, Qing; Price, Lloyd; Shao, Lin; ...

2015-10-29

Here, through examination of radiation tolerance properties of amorphous silicon oxycarbide (SiOC) and crystalline Fe composite to averaged damage levels, from approximately 8 to 30 displacements per atom (dpa), we demonstrated that the Fe/SiOC interface and the Fe/amorphous Fe xSi yO z interface act as efficient defect sinks and promote the recombination of vacancies and interstitials. For thick Fe/SiOC multilayers, a clear Fe/SiOC interface remained and no irradiation-induced mixing was observed even after 32 dpa. For thin Fe/SiOC multilayers, an amorphous Fe xSi yO z intermixed layer was observed to form at 8 dpa, but no further layer growth wasmore » observed for higher dpa levels.« less

Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

PubMed Central

2014-01-01

Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%. PACS 81.07.Ta; 78.67.Pt; 88.40.jj PMID:25489285

Amorphous surface layers in Ti-implanted Fe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Knapp, J.A.; Follstaedt, D.M.; Picraux, S.T.

1979-01-01

Implanting Ti into high-purity Fe results in an amorphous surface layer which is composed of not only Fe and Ti, but also C. Implantations were carried out at room temperature over the energy range 90 to 190 keV and fluence range 1 to 2 x 10/sup 16/ at/cm/sup 2/. The Ti-implanted Fe system has been characterized using transmission electron microscopy (TEM), ion backscattering and channeling analysis, and (d,p) nuclear reaction analysis. The amorphous layer was observed to form at the surface and grow inward with increasing Ti fluence. For an implant of 1 x 10/sup 17/ Ti/cm/sup 2/ at 180more » keV the layer thickness was 150 A, while the measured range of the implanted Ti was approx. 550 A. This difference is due to the incorporation of C into the amorphous alloy by C being deposited on the surface during implantation and subsequently diffusing into the solid. Our results indicate that C is an essential constituent of the amorphous phase for Ti concentrations less than or equal to 10 at. %. For the 1 x 10/sup 17/ Ti/cm/sup 2/ implant, the concentration of C in the amorphous phase was approx. 25 at. %, while that of Ti was only approx. 3 at. %. A higher fluence implant of 2 x 10/sup 17/ Ti/cm/sup 2/ produced an amorphous layer with a lower C concentration of approx. 10 at. % and a Ti concentration of approx. 20 at. %.« less

Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Pei; Zaslavsky, Alexander; Longo, Paolo

2016-01-07

Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Taucmore » and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO{sub 2} superlattices with single and multiple a-Ge layers down to 2 nm thickness.« less

High Temperature Superconducting Thick Films

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Holesinger, Terry G.; Jia, Quanxi

2005-08-23

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

Low-Temperature Growth of Hydrogenated Amorphous Silicon Carbide Solar Cell by Inductively Coupled Plasma Deposition Toward High Conversion Efficiency in Indoor Lighting.

PubMed

Kao, Ming-Hsuan; Shen, Chang-Hong; Yu, Pei-Chen; Huang, Wen-Hsien; Chueh, Yu-Lun; Shieh, Jia-Min

2017-10-05

A p-a-SiC:H window layer was used in amorphous Si thin film solar cells to boost the conversion efficiency in an indoor lighting of 500 lx. The p-a-SiC:H window layer/p-a-Si:H buffer layer scheme moderates the abrupt band bending across the p/i interface for the enhancement of V OC , J SC and FF in the solar spectra of short wavelengths. The optimized thickness of i-a-Si:H absorber layer is 400 nm to achieve the conversion efficiency of ~9.58% in an AM1.5 G solar spectrum. However, the optimized thickness of the absorber layer can be changed from 400 to 600 nm in the indoor lighting of 500 lx, exhibiting the maximum output power of 25.56 μW/cm 2 . Furthermore, various durability tests with excellent performance were investigated, which are significantly beneficial to harvest the indoor lights for applications in the self-powered internet of thing (IoT).

Impacts of amorphous and crystalline cobalt ferrite layers on the giant magneto-impedance response of a soft ferromagnetic amorphous ribbon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukherjee, D.; Devkota, J.; Ruiz, A.

2014-09-28

A systematic study of the effect of depositing CoFe₂O₄ (CFO) films of various thicknesses (d = 0–600 nm) on the giant magneto-impedance (GMI) response of a soft ferromagnetic amorphous ribbon Co₆₅Fe₄Ni₂Si₁₅B₁₄ has been performed. The CFO films were grown on the amorphous ribbons by the pulsed laser deposition technique. X-ray diffraction and transmission electron microscopy revealed a structural variation of the CFO film from amorphous to polycrystalline as the thickness of the CFO film exceeded a critical value of 300 nm. Atomic force microscopy evidenced the increase in surface roughness of the CFO film as the thickness of the CFOmore » film was increased. These changes in the crystallinity and morphology of the CFO film were found to have a distinct impact on the GMI response of the ribbon. Relative to the bare ribbon, coating of amorphous CFO films significantly enhanced the GMI response of the ribbon, while polycrystalline CFO films decreased it considerably. The maximum GMI response was achieved near the onset of the structural transition of the CFO film. These findings are of practical importance in developing high-sensitivity magnetic sensors.« less

He+ ion irradiation response of Fe–TiO2 multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderoglu, O.; Zhou, M. J.; Zhang, J.

2013-04-01

The accumulation of radiation-induced defect clusters and He bubble formation in He+ ion irradiated nanocrystalline TiO2 and Fe–TiO2 multilayer thin films were investigated using transmission electron microscopy (TEM). Prior to ion irradiation it was found that the crystallinity of TiO2 layers depends on the individual layer thickness: While all TiO2 layers are amorphous at 5 nm individual layer thickness, at 100 nm they are crystalline with a rutile polymorph. After He+ irradiation up to ~6 dpa at room temperature, amorphization of TiO2 layers was not observed in both nanocrystalline TiO2 single layers and Fe–TiO2 multilayers. The suppression of radiation-induced amorphizationmore » in TiO2 is interpreted in terms of a high density of defect sinks in these nano-composites in the form of Fe–TiO2 interphase boundaries and columnar grains within each layer with nano-scale intercolumnar porosity. In addition, a high concentration of He is believed to be trapped at these interfaces in the form of sub-nanometer-scale clusters retarding the formation of relatively larger He bubbles that can be resolved in TEM.« less

Real-time curling probe monitoring of dielectric layer deposited on plasma chamber wall

NASA Astrophysics Data System (ADS)

Hotta, Masaya; Ogawa, Daisuke; Nakamura, Keiji; Sugai, Hideo

2018-04-01

A microwave resonator probe called a curling probe (CP) was applied to in situ monitoring of a dielectric layer deposited on a chamber wall during plasma processing. The resonance frequency of the CP was analytically found to shift in proportion to the dielectric layer thickness; the proportionality constant was determined from a comparison with the finite-difference time-domain (FDTD) simulation result. Amorphous carbon layers deposited in acetylene inductively coupled plasma (ICP) discharge were monitored using the CP. The measured resonance frequency shift dictated the carbon layer thickness, which agreed with the results from the surface profiler and ellipsometry.

The bonding of protective films of amorphic diamond to titanium

NASA Astrophysics Data System (ADS)

Collins, C. B.; Davanloo, F.; Lee, T. J.; Jander, D. R.; You, J. H.; Park, H.; Pivin, J. C.

1992-04-01

Films of amorphic diamond can be deposited from laser plasma ions without the use of catalysts such as hydrogen or fluorine. Prepared without columnar patterns of growth, the layers of this material have been reported to have ``bulk'' values of mechanical properties that have suggested their usage as protective coatings for metals. Described here is a study of the bonding and properties realized in one such example, the deposition of amorphic diamond on titanium. Measurements with Rutherford backscattering spectrometry and transmission electron microscopy showed that the diamond coatings deposited from laser plasmas were chemically bonded to Ti substrates in 100-200-Å-thick interfacial layers containing some crystalline precipitates of TiC. Resistance to wear was estimated with a modified sand blaster and in all cases the coating was worn away without any rupture or deterioration of the bonding layer. Such wear was greatly reduced and lifetimes of the coated samples were increased by a factor of better than 300 with only 2.7 μm of amorphic diamond.

Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films

NASA Astrophysics Data System (ADS)

Khamseh, S.; Araghi, H.; Ghahari, M.; Faghihi Sani, M. A.

2016-03-01

W-doped VO2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VOX-WOX-VOX ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO2 (M) and VO2 (B) was formed in VOX-WOX-VOX ceramic thin films. Tungsten content of VOX-WOX-VOX ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance ( R sq) of VOX-WOX-VOX ceramic thin films increased from 65 to 86 kΩ/sq. The VOX-WOX-VOX ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness.

Hafnium oxide films for application as gate dielectrics

NASA Astrophysics Data System (ADS)

Hsu, Shuo-Lin

The deposition and characterization of HfO2 films for potential application as a high-kappa gate dielectric in MOS devices has been investigated. DC magnetron reactive sputtering was utilized to prepare the HfO2 films. Structural, chemical, and electrical analyses were performed to characterize the various physical, chemical and electrical properties of the sputtered HfO2 films. The sputtered HfO2 films were annealed to simulate the dopant activation process used in semiconductor processing, and to study the thermal stability of the high-kappa, films. The changes in the film properties due to the annealing are also discussed in this work. Glancing angle XRD was used to analyse the atomic scale structure of the films. The as deposited films exhibit an amorphous, regardless of the film thickness. During post-deposition annealing, the thicker films crystallized at lower temperature (< 600°C), and ultra-thin (5.8 nm) film crystallized at higher temperature (600--720°C). The crystalline phase which formed depended on the thickness of the films. The low temperature phase (monoclinic) formed in the 10--20 nm annealed films, and high temperature phase (tetragonal) formed in the ultra-thin annealed HfO2 film. TEM cross-section studies of as deposited samples show that an interfacial layer (< 1nm) exists between HfO2/Si for all film thicknesses. The interfacial layer grows thicker during heat treatment, and grows more rapidly when grain boundaries are present. XPS surface analysis shows the as deposited films are fully oxidized with an excess of oxygen. Interfacial chemistry analysis indicated that the interfacial layer is a silicon-rich silicate layer, which tends to transform to silica-like layer during heat treatment. I-V measurements show the leakage current density of the Al/as deposited-HfO 2/Si MOS diode is of the order of 10-3 A/cm 2, two orders of magnitude lower than that of a ZrO2 film with similar physical thickness. Carrier transport is dominated by Schottky emission at lower electric fields, and by Frenkel-Poole emission in the higher electric field region. After annealing, the leakage current density decreases significantly as the structure remains amorphous structure. It is suggested that this decrease is assorted with the densification and defect healing which accures when the porous as-deposited amorphous structure is annealed. The leakage current density increases of the HfO2 layer crystallizes on annealing, which is attributed to the presence of grain boundaries. C-V measurements of the as deposited film shows typical C-V characteristics, with negligible hystersis, a small flat band voltage shift, but great frequency dispersion. The relative permittivity of HfO2/interfacial layer stack obtained from the capacitance at accumulation is 15, which corresponds to an EOT (equivalent oxide thickness) = 1.66 nm. After annealing, the frequency dispersion is greatly enhanced, and the C-V curve is shifted toward the negative voltage. Reliability tests show that the HfO2 films which remain amorphous after annealing possess superior resistance to constant voltage stress and ambient aging. This study concluded that the sputtered HfO 2 films exhibit an amorphous as deposited. Postdeposition annealing alters the crystallinity, interfacial properties, and electrical characteristics. The HfO2 films which remain amorphous structure after annealing possess the best electrical properties.

The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moerman, David; Colbert, Adam E.; Ginger, David S., E-mail: ginger@chem.washington.edu

We study the effects of modifying indium tin oxide electrodes with ultrathin titania (TiO{sub 2}) layers grown via plasma-enhanced atomic layer deposition (PE-ALD). We find an optimal thickness of PE-ALD-grown titania by tracking performance, which initially increases, peaks, and eventually decreases with increasing TiO{sub 2} thickness. We use scanning Kelvin probe microscopy (SKPM) to measure both the local work function and its distribution as a function of TiO{sub 2} thickness. We find that the variance in contact potential difference across the surface of the film is related to either the amorphous or anatase TiO{sub 2} form. Finally, we use localmore » SKPM recombination rate experiments, supported by bulk transient photovoltage and charge extraction measurements. We show that the optimum TiO{sub 2} thickness is the one for which the carrier lifetime is the longest and the charge carrier density is the highest, when the TiO{sub 2} is amorphous, in agreement with the device measurements.« less

Micro-arc oxidation as a tool to develop multifunctional calcium-rich surfaces for dental implant applications.

PubMed

Ribeiro, A R; Oliveira, F; Boldrini, L C; Leite, P E; Falagan-Lotsch, P; Linhares, A B R; Zambuzzi, W F; Fragneaud, B; Campos, A P C; Gouvêa, C P; Archanjo, B S; Achete, C A; Marcantonio, E; Rocha, L A; Granjeiro, J M

2015-09-01

Titanium (Ti) is commonly used in dental implant applications. Surface modification strategies are being followed in last years in order to build Ti oxide-based surfaces that can fulfill, simultaneously, the following requirements: induced cell attachment and adhesion, while providing a superior corrosion and tribocorrosion performance. In this work micro-arc oxidation (MAO) was used as a tool for the growth of a nanostructured bioactive titanium oxide layer aimed to enhance cell attachment and adhesion for dental implant applications. Characterization of the surfaces was performed, in terms of morphology, topography, chemical composition and crystalline structure. Primary human osteoblast adhesion on the developed surfaces was investigated in detail by electronic and atomic force microscopy as well as immunocytochemistry. Also an investigation on the early cytokine production was performed. Results show that a relatively thick hybrid and graded oxide layer was produced on the Ti surface, being constituted by a mixture of anatase, rutile and amorphous phases where calcium (Ca) and phosphorous (P) were incorporated. An outermost nanometric-thick amorphous oxide layer rich in Ca was present in the film. This amorphous layer, rich in Ca, improved fibroblast viability and metabolic activity as well as osteoblast adhesion. High-resolution techniques allowed to understand that osteoblasts adhered less in the crystalline-rich regions while they preferentially adhere and spread over in the Ca-rich amorphous oxide layer. Also, these surfaces induce higher amounts of IFN-γ cytokine secretion, which is known to regulate inflammatory responses, bone microarchitecture as well as cytoskeleton reorganization and cellular spreading. These surfaces are promising in the context of dental implants, since they might lead to faster osseointegration. Copyright © 2015 Elsevier B.V. All rights reserved.

Profilometry of thin films on rough substrates by Raman spectroscopy

PubMed Central

Ledinský, Martin; Paviet-Salomon, Bertrand; Vetushka, Aliaksei; Geissbühler, Jonas; Tomasi, Andrea; Despeisse, Matthieu; De Wolf , Stefaan; Ballif , Christophe; Fejfar, Antonín

2016-01-01

Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2. PMID:27922033

Method utilizing laser-processing for the growth of epitaxial p-n junctions

DOEpatents

Young, R.T.; Narayan, J.; Wood, R.F.

1979-11-23

This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

Preparation of nanocrystalline TiN coated cubic boron nitride powders by a sol-gel process.

PubMed

Park, Hee S; Umer, M Adeel; Ryu, Ho J; Hong, Soon H

2011-01-01

Cubic boron nitride (cBN) particles coated with 20 wt% nanocrystalline TiN were prepared by coating the surface of cBN particles with TiO2, followed by nitridation with NH3 gas at 900 degrees C. Coating of TiO2 on cBN powders was accomplished by a sol-gel process from a solution of titanium (IV) isopropoxide and anhydrous ethanol. An amorphous TiO(x) layer of 50 nm thickness was homogenously formed on the surface of the cBN particles by the sol-gel process. The amorphous layer was then crystallized to an anatase TiO2 phase through calcination in air at 400 degrees C. The crystallized TiO2 layer was 50 nm in thickness, and the size of TiO2 particles comprising the layer was nearly 10 nm. The TiO2 on cBN surfaces was completely converted into nanocrystalline TiN of uniform particles 20 nm in size on cBN particles by nitridation under flowing NH3 gas.

Optical switching system and method

DOEpatents

Ranganathan, Radha; Gal, Michael; Taylor, P. Craig

1992-01-01

An optically bistable device is disclosed. The device includes a uniformly thick layer of amorphous silicon to constitute a Fabry-Perot chamber positioned to provide a target area for a probe beam. The probe beam has a maximum energy less than the energy band gap of the amorphous semiconductor. In a preferred embodiment, a multilayer dielectric mirror is positioned on the Fabry-Perot chamber to increase the finesse of switching of the device. The index of refraction of the amorphous material is thermally altered to alter the transmission of the probe beam.

Quantitative HAADF STEM of SiGe in presence of amorphous surface layers from FIB preparation.

PubMed

Grieb, Tim; Tewes, Moritz; Schowalter, Marco; Müller-Caspary, Knut; Krause, Florian F; Mehrtens, Thorsten; Hartmann, Jean-Michel; Rosenauer, Andreas

2018-01-01

The chemical composition of four Si 1-x Ge x layers grown on silicon was determined from quantitative scanning transmission electron microscopy (STEM). The chemical analysis was performed by a comparison of the high-angle annular dark field (HAADF) intensity with multislice simulations. It could be shown that amorphous surface layers originating from the preparation process by focused-ion beam (FIB) at 30 kV have a strong influence on the quantification: the local specimen thickness is overestimated by approximately a factor of two, and the germanium concentration is substantially underestimated. By means of simulations, the effect of amorphous surface layers on the HAADF intensity of crystalline silicon and germanium is investigated. Based on these simulations, a method is developed to analyze the experimental HAADF-STEM images by taking the influence of the amorphous layers into account which is done by a reduction of the intensities by multiplication with a constant factor. This suggested modified HAADF analysis gives germanium concentrations which are in agreement with the nominal values. The same TEM lamella was treated with low-voltage ion milling which removed the amorphous surface layers completely. The results from subsequent quantitative HAADF analyses are in agreement with the nominal concentrations which validates the applicability of the used frozen-lattice based multislice simulations to describe the HAADF scattering of Si 1-x Ge x in STEM. Copyright © 2017 Elsevier B.V. All rights reserved.

Crystallization of silicon-germanium by aluminum-induced layer exchange

NASA Astrophysics Data System (ADS)

Isomura, Masao; Yajima, Masahiro; Nakamura, Isao

2018-02-01

We have studied the crystallization of amorphous silicon-germanium (a-SiGe) by aluminum (Al)-induced layer exchange (ALILE) with a starting structure of glass/Al/Al oxide/a-SiGe. We examined ALILE at 450 °C, which is slightly higher than the eutectic temperature of Ge and Al, in order to shorten the ALILE time. We successfully produced c-SiGe films oriented in the (111) direction for 16 h without significant alloying. The thickness of Al layers should be 2800 Å or more to complete the ALILE for the a-SiGe layers of 2000-2800 Å thickness. When the Al layer is as thick as the a-SiGe layer, almost uniform c-SiGe is formed on the glass substrate. On the other hand, the islands of c-SiGe are formed on the glass substrate when the Al layer is thicker than the a-SiGe layer. The islands become smaller with thicker Al layers because more excess Al remains between the SiGe islands. The results indicate that the configuration of c-SiGe can be altered from a uniform structure to island structures of various sizes by changing the ratio of a-SiGe thickness to Al thickness.

High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange

NASA Astrophysics Data System (ADS)

Murata, H.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.; Toko, K.

2017-12-01

The Ni-induced layer-exchange growth of amorphous carbon is a unique method used to fabricate uniform multilayer graphene (MLG) directly on an insulator. To improve the crystal quality of MLG, we prepare AlOx or SiO2 interlayers between amorphous C and Ni layers, which control the extent of diffusion of C atoms into the Ni layer. The growth morphology and Raman spectra observed from MLG formed by layer exchange strongly depend on the material type and thickness of the interlayers; a 1-nm-thick AlOx interlayer is found to be ideal for use in experiments. Transmission electron microscopy and electron energy-loss spectra reveal that the crystal quality of the resulting MLG is much higher than that of a sample without an interlayer. The grain size reaches a few μm, leading to an electrical conductivity of 1290 S/cm. The grain size and the electrical conductivity are the highest among MLG synthesized using a solid-phase reaction including metal-induced crystallization. The direct synthesis of uniform, high-quality MLG on arbitrary substrates will pave the way for advanced electronic devices integrated with carbon materials.

Investigation of embedded perovskite nanoparticles for enhanced capacitor permittivities.

PubMed

Krause, Andreas; Weber, Walter M; Pohl, Darius; Rellinghaus, Bernd; Verheijen, Marcel; Mikolajick, Thomas

2014-11-26

Growth experiments show significant differences in the crystallization of ultrathin CaTiO3 layers on polycrystalline Pt surfaces. While the deposition of ultrathin layers below crystallization temperature inhibits the full layer crystallization, local epitaxial growth of CaTiO3 crystals on top of specific oriented Pt crystals occurs. The result is a formation of crystals embedded in an amorphous matrix. An epitaxial alignment of the cubic CaTiO3 ⟨111⟩ direction on top of the underlying Pt {111} surface has been observed. A reduced forming energy is attributed to an interplay of surface energies at the {111} interface of both materials and CaTiO3 nanocrystallites facets. The preferential texturing of CaTiO3 layers on top of Pt has been used in the preparation of ultrathin metal-insulator-metal capacitors with 5-30 nm oxide thickness. The effective CaTiO3 permittivity in the capacitor stack increases to 55 compared to capacitors with amorphous layers and a permittivity of 28. The isolated CaTiO3 crystals exhibit a passivation of the CaTiO3 grain surfaces by the surrounding amorphous matrix, which keeps the capacitor leakage current at ideally low values comparable for those of amorphous thin film capacitors.

Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

DOEpatents

Carlson, David E.; Wronski, Christopher R.

1979-01-01

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

Electron scattering characteristics of polycrystalline metal transition films by in-situ electrical resistance measurements

NASA Astrophysics Data System (ADS)

Trindade, I. G.; Leitão, D.; Fermento, R.; Pogorelev, Y.; Sousa, J. B.

2009-08-01

In-situ electrical resistance measurements were performed to obtain the scattering characteristics of very thin polycrystalline metal transition magnetic alloys grown by ion beam deposition (IBD) on specific underlayers. The experimental curves show size effects at small film thicknesses and important differences between Co 85Fe 15 and Ni 81Fe 19 thin layers grown on identical underlayers of Ta70 Å/Ru13 Å. The largest difference was observed in Ni 81Fe 19 films grown on underlayers of amorphous Ta70 Å. The experimental curves of electrical resistivity/conductivity variation with layer thickness were well fit within the Mayadas and Shatzkes (M-S) model, assuming specific formulations for grain growth with layer thickness.

Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature

NASA Astrophysics Data System (ADS)

Ohno, Yutaka; Yoshida, Hideto; Takeda, Seiji; Liang, Jianbo; Shigekawa, Naoteru

2018-02-01

The intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature is examined by plane-view transmission electron microscopy (TEM) and cross-sectional scanning TEM using damage-free TEM specimens prepared only by mechanochemical etching. The bonded heterointerfaces include an As-deficient crystalline GaAs layer with a thickness of less than 1 nm and an amorphous Si layer with a thickness of approximately 3 nm, introduced by the irradiation of an Ar atom beam for surface activation before bonding. It is speculated that the interface resistance mainly originates from the As-deficient defects in the former layer.

Optimization of Al2O3/TiO2/Al 2O3 Multilayer Antireflection Coating With X-Ray Scattering Techniques

NASA Astrophysics Data System (ADS)

Li, Chao

Broadband multilayer antireflection coatings (ARCs) are keys to improving solar cell efficiencies. The goal of this dissertation is to optimize the multilayer Al2O3/TiO2/Al2O 3 ARC designed for a III-V space multi-junction solar cell with understanding influences of post-annealing and varying deposition parameters on the optical properties. Accurately measuring optical properties is important in accessing optical performances of ARCs. The multilayer Al2O3/TiO 2/Al2O3 ARC and individual Al2O 3 and TiO2 layers were characterized by a novel X-ray reflectivity (XRR) method and a combined method of grazing-incidence small angle X-ray scattering (GISAXS), atomic force microscopy (AFM), and XRR developed in this study. The novel XRR method combining an enhanced Fourier analysis with specular XRR simulation effectively determines layer thicknesses and surface and interface roughnesses and/or grading with sub-nanometer precision, and densities less than three percent uncertainty. Also, the combined method of GISAXS, AFM, and XRR characterizes the distribution of pore size with one-nanometer uncertainty. Unique to this method, the diffuse scattering from surface and interface roughnesses is estimated with surface parameters (root mean square roughness sigma, lateral correlation length ξ, and Hurst parameter h) obtained from AFM, and layer densities, surface grading and interface roughness/grading obtained from specular XRR. It is then separated from pore scattering. These X-ray scattering techniques obtained consistent results and were validated by other techniques including optical reflectance, spectroscopic ellipsometry (SE), glancing incidence X-ray diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy. The ARCs were deposited by atomic layer deposition with standard parameters at 200 °C. The as-deposited individual Al2O3 layer on Si is porous and amorphous as indicated by the combined methods of GISAXS, AFM, and XRR. Both post-annealing at 400 °C for 40 min in air and varying ALD parameters can eliminate pores, and lead to consistent increases in density and refractive index determined by the XRR method, SE, and optical reflectance measurements. After annealing, the layer remains amorphous. On the other hand, the as-deposited TiO 2 layer is non-porous and amorphous. It is densified and crystallized after annealing at 400 °C for 10 min in air. The multilayer Al2O 3/TiO2/Al2O3 ARC deposited on Si has surface and interface roughnesses and/or grading on the order of one nanometer. Annealing at 400 °C for 10 min in air induces densification and crystallization of the amorphous TiO2 layer as well as possible chemical reactions between TiO2 and Si diffusing from the substrate. On the other hand, Al2O3 layers remain amorphous after annealing. The thickness of the top Al2O3 layer decreases - likely due to interdiffusion between the top two layers and loss of hydrogen from hydroxyl groups initially present in the ALD layers. The thickness of the bottom Al2O3 layer increases, probably due to the diffusion of Si atoms into the bottom layer. In addition, the multilayer Al 2O3/TiO2/Al2O3 ARC was deposited on AlInP (30nm) / GaInP (100nm) / GaAs that includes the topmost layers of III-V multi-junction solar cells. Reflectance below 5 % is achieved within nearly the whole wavelength range of the current-limiting sub-cell. Also, internal scattering occurs in the TiO2 layer possibly associated with the initiated crystallization in the TiO2 layer while absent in the amorphous Al2O3 layers.

Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (˜550 cm2/V s)

NASA Astrophysics Data System (ADS)

Xu, Chang; Gao, Hongmiao; Sugino, Takayuki; Miyao, Masanobu; Sadoh, Taizoh

2018-06-01

High-speed thin-film transistors (TFTs) are required to develop the next generation of electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, high-carrier-mobility semiconductor films on insulator structures should be fabricated with low-temperature processing conditions (≤500 °C). To achieve this, we investigate solid-phase crystallization of amorphous-GeSn (a-GeSn) films (Sn concentration: 2% and thickness: 50-200 nm) on insulating substrates, where thin a-Si under-layers (thickness: 0-20 nm) are introduced between a-GeSn films and insulating substrates. The GeSn films are polycrystallized by annealing (450 °C, 20 h) for all samples irrespective of a-GeSn and a-Si thickness conditions, while the Si films remain amorphous. Analysis of crystal structures of GeSn films (thickness: 50 nm) reveals that grain sizes decrease from ˜10 μm to 2-3 μm by the introduction of a-Si under-layers (thickness: 3-20 nm). This phenomenon is attributed to the change in dominant nucleation sites from the interface to the bulk, which significantly decreases grain-boundary scattering of carriers through a decrease in the barrier heights at grain boundaries. Bulk-nucleation further becomes dominant by increasing the GeSn film thickness. As a result, a high carrier mobility of ˜550 cm2/V s is realized for GeSn films (thickness: 100 nm) grown with a-Si under-layers. This mobility is the largest among ever reported data for Ge and GeSn grown on an insulator. This technique will facilitate realization of high-speed TFTs for use in the next generation of electronics.

Fracture-induced amorphization of polycrystalline SiO2 stishovite: a potential platform for toughening in ceramics

PubMed Central

Nishiyama, Norimasa; Wakai, Fumihiro; Ohfuji, Hiroaki; Tamenori, Yusuke; Murata, Hidenobu; Taniguchi, Takashi; Matsushita, Masafumi; Takahashi, Manabu; Kulik, Eleonora; Yoshida, Kimiko; Wada, Kouhei; Bednarcik, Jozef; Irifune, Tetsuo

2014-01-01

Silicon dioxide has eight stable crystalline phases at conditions of the Earth's rocky parts. Many metastable phases including amorphous phases have been known, which indicates the presence of large kinetic barriers. As a consequence, some crystalline silica phases transform to amorphous phases by bypassing the liquid via two different pathways. Here we show a new pathway, a fracture-induced amorphization of stishovite that is a high-pressure polymorph. The amorphization accompanies a huge volume expansion of ~100% and occurs in a thin layer whose thickness from the fracture surface is several tens of nanometers. Amorphous silica materials that look like strings or worms were observed on the fracture surfaces. The amount of amorphous silica near the fracture surfaces is positively correlated with indentation fracture toughness. This result indicates that the fracture-induced amorphization causes toughening of stishovite polycrystals. The fracture-induced solid-state amorphization may provide a potential platform for toughening in ceramics. PMID:25297473

Fracture-induced amorphization of polycrystalline SiO2 stishovite: a potential platform for toughening in ceramics.

PubMed

Nishiyama, Norimasa; Wakai, Fumihiro; Ohfuji, Hiroaki; Tamenori, Yusuke; Murata, Hidenobu; Taniguchi, Takashi; Matsushita, Masafumi; Takahashi, Manabu; Kulik, Eleonora; Yoshida, Kimiko; Wada, Kouhei; Bednarcik, Jozef; Irifune, Tetsuo

2014-10-09

Silicon dioxide has eight stable crystalline phases at conditions of the Earth's rocky parts. Many metastable phases including amorphous phases have been known, which indicates the presence of large kinetic barriers. As a consequence, some crystalline silica phases transform to amorphous phases by bypassing the liquid via two different pathways. Here we show a new pathway, a fracture-induced amorphization of stishovite that is a high-pressure polymorph. The amorphization accompanies a huge volume expansion of ~100% and occurs in a thin layer whose thickness from the fracture surface is several tens of nanometers. Amorphous silica materials that look like strings or worms were observed on the fracture surfaces. The amount of amorphous silica near the fracture surfaces is positively correlated with indentation fracture toughness. This result indicates that the fracture-induced amorphization causes toughening of stishovite polycrystals. The fracture-induced solid-state amorphization may provide a potential platform for toughening in ceramics.

Amorphization of hard crystalline materials by electrosprayed nanodroplet impact

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gamero-Castaño, Manuel, E-mail: mgameroc@uci.edu; Torrents, Anna; Borrajo-Pelaez, Rafael

2014-11-07

A beam of electrosprayed nanodroplets impacting on single-crystal silicon amorphizes a thin surface layer of a thickness comparable to the diameter of the drops. The phase transition occurs at projectile velocities exceeding a threshold, and is caused by the quenching of material melted by the impacts. This article demonstrates that the amorphization of silicon is a general phenomenon, as nanodroplets impacting at sufficient velocity also amorphize other covalently bonded crystals. In particular, we bombard single-crystal wafers of Si, Ge, GaAs, GaP, InAs, and SiC in a range of projectile velocities, and characterize the samples via electron backscatter diffraction and transmissionmore » electron microscopy to determine the aggregation state under the surface. InAs requires the lowest projectile velocity to develop an amorphous layer, followed by Ge, Si, GaAs, and GaP. SiC is the only semiconductor that remains fully crystalline, likely due to the relatively low velocities of the beamlets used in this study. The resiliency of each crystal to amorphization correlates well with the specific energy needed to melt it except for Ge, which requires projectile velocities higher than expected.« less

Surface Nanocrystallization and Amorphization of Dual-Phase TC11 Titanium Alloys under Laser Induced Ultrahigh Strain-Rate Plastic Deformation

PubMed Central

Luo, Sihai; Zhou, Liucheng; Wang, Xuede; Cao, Xin; Nie, Xiangfan

2018-01-01

As an innovative surface technology for ultrahigh strain-rate plastic deformation, laser shock peening (LSP) was applied to the dual-phase TC11 titanium alloy to fabricate an amorphous and nanocrystalline surface layer at room temperature. X-ray diffraction, transmission electron microscopy, and high-resolution transmission electron microscopy (HRTEM) were used to investigate the microstructural evolution, and the deformation mechanism was discussed. The results showed that a surface nanostructured surface layer was synthesized after LSP treatment with adequate laser parameters. Simultaneously, the behavior of dislocations was also studied for different laser parameters. The rapid slipping, accumulation, annihilation, and rearrangement of dislocations under the laser-induced shock waves contributed greatly to the surface nanocrystallization. In addition, a 10 nm-thick amorphous structure layer was found through HRTEM in the top surface and the formation mechanism was attributed to the local temperature rising to the melting point, followed by its subsequent fast cooling. PMID:29642379

Surface Nanocrystallization and Amorphization of Dual-Phase TC11 Titanium Alloys under Laser Induced Ultrahigh Strain-Rate Plastic Deformation.

PubMed

Luo, Sihai; Zhou, Liucheng; Wang, Xuede; Cao, Xin; Nie, Xiangfan; He, Weifeng

2018-04-06

As an innovative surface technology for ultrahigh strain-rate plastic deformation, laser shock peening (LSP) was applied to the dual-phase TC11 titanium alloy to fabricate an amorphous and nanocrystalline surface layer at room temperature. X-ray diffraction, transmission electron microscopy, and high-resolution transmission electron microscopy (HRTEM) were used to investigate the microstructural evolution, and the deformation mechanism was discussed. The results showed that a surface nanostructured surface layer was synthesized after LSP treatment with adequate laser parameters. Simultaneously, the behavior of dislocations was also studied for different laser parameters. The rapid slipping, accumulation, annihilation, and rearrangement of dislocations under the laser-induced shock waves contributed greatly to the surface nanocrystallization. In addition, a 10 nm-thick amorphous structure layer was found through HRTEM in the top surface and the formation mechanism was attributed to the local temperature rising to the melting point, followed by its subsequent fast cooling.

Phonon-interface scattering in multilayer graphene on an amorphous support

PubMed Central

Sadeghi, Mir Mohammad; Jo, Insun; Shi, Li

2013-01-01

The recent studies of thermal transport in suspended, supported, and encased graphene just began to uncover the richness of two-dimensional phonon physics, which is relevant to the performance and reliability of graphene-based functional materials and devices. Among the outstanding questions are the exact causes of the suppressed basal-plane thermal conductivity measured in graphene in contact with an amorphous material, and the layer thickness needed for supported or embedded multilayer graphene (MLG) to recover the high thermal conductivity of graphite. Here we use sensitive in-plane thermal transport measurements of graphene samples on amorphous silicon dioxide to show that full recovery to the thermal conductivity of the natural graphite source has yet to occur even after the MLG thickness is increased to 34 layers, considerably thicker than previously thought. This seemingly surprising finding is explained by long intrinsic scattering mean free paths of phonons in graphite along both basal-plane and cross-plane directions, as well as partially diffuse scattering of MLG phonons by the MLG-amorphous support interface, which is treated by an interface scattering model developed for highly anisotropic materials. Based on the phonon transmission coefficient calculated from reported experimental thermal interface conductance results, phonons emerging from the interface consist of a large component that is scattered across the interface, making rational choice of the support materials a potential approach to increasing the thermal conductivity of supported MLG. PMID:24067656

Ultra-high power capabilities in amorphous FePO4 thin films

NASA Astrophysics Data System (ADS)

Gandrud, Knut B.; Nilsen, Ola; Fjellvåg, Helmer

2016-02-01

Record breaking electrochemical properties of FePO4 have been found through investigation of the thickness dependent electrochemical properties of amorphous thin film electrodes. Atomic layer deposition was used for production of thin films of amorphous FePO4 with highly accurate thickness and topography. Electrochemical characterization of these thin film electrodes revealed that the thinner electrodes behave in a pseudocapacitive manner even at high rates of Li+ de/intercalation, which enabled specific powers above 1 MW kg-1 FePO4 to be obtained with minimal capacity loss. In addition, a self-enhancing kinetic effect was observed during cycling enabling more than 10,000 cycles at current rates approaching that of a supercapacitor (11s charge/discharge). The current findings may open for construction of ultra-high power battery electrodes that combines the energy density of batteries with the power capabilities of supercapacitors.

Surface and bulk crystallization of amorphous solid water films: Confirmation of “top-down” crystallization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuan, Chunqing; Smith, R. Scott; Kay, Bruce D.

2016-01-11

Here, the crystallization kinetics of nanoscale amorphous solid water (ASW) films are investigated using temperature-programmed desorption (TPD) and reflection absorption infrared spectroscopy (RAIRS). TPD measurements are used to probe surface crystallization and RAIRS measurements are used to probe bulk crystallization. Isothermal TPD results show that surface crystallization is independent of the film thickness (from 100 to 1000 ML). Conversely, the RAIRS measurements show that the bulk crystallization time increases linearly with increasing film thickness. These results suggest that nucleation and crystallization begin at the ASW/vacuum interface and then the crystallization growth front propagates linearly into the bulk. This mechanism wasmore » confirmed by selective placement of an isotopic layer (5% D 2O in H 2O) at various positions in an ASW (H 2O) film. In this case, the closer the isotopic layer was to the vacuum interface, the earlier the isotopic layer crystallized. These experiments provide direct evidence to confirm that ASW crystallization in vacuum proceeds by a “top-down” crystallization mechanism.« less

Atomic mixing induced by swift heavy ion irradiation of Fe/Zr multilayers

NASA Astrophysics Data System (ADS)

Jaouen, C.; Michel, A.; Pacaud, J.; Dufour, C.; Bauer, Ph.; Gervais, B.

1999-01-01

The mechanism of ion induced mixing and phase change was studied for Fe/Zr multilayers, and specifically for the case of swift heavy ions giving rise to a very large electronic excitation of the target. The multilayers had a modulation of 7.6 nm and an overall composition Fe 69Zr 31. The Zr layers were amorphous whereas the Fe ones were crystalline (bcc) with a very strong (1 1 0) texture in the growth direction. The phase transformation and the composition changes were analysed using the structural and magnetic properties of the Fe component by means of a detailed analysis of the X-ray diffraction profiles and with the aid of backscattering Mössbauer spectroscopy. A complete mixing was observed at a fluence of 10 13 U/cm 2. Both phenomena, the dose dependence of the ion beam mixed amorphous non-magnetic phase and the quantitative evolution of the crystalline iron layer thickness, suggest that mixing occurs in a two-stage process. At an initial stage, an anisotropic diffusion of iron atoms in the amorphous zirconium layers takes place along the interface, while subsequent ion bombardment leads to a generalised transformation through the whole of the Fe layer. Finally, the implications of these observations are discussed in comparison to the plastic deformation phenomena reported for amorphous alloys.

Micromechanics of Amorphous Metal/Polymer Hybrid Structures with 3D Cellular Architectures: Size Effects, Buckling Behavior, and Energy Absorption Capability.

PubMed

Mieszala, Maxime; Hasegawa, Madoka; Guillonneau, Gaylord; Bauer, Jens; Raghavan, Rejin; Frantz, Cédric; Kraft, Oliver; Mischler, Stefano; Michler, Johann; Philippe, Laetitia

2017-02-01

By designing advantageous cellular geometries and combining the material size effects at the nanometer scale, lightweight hybrid microarchitectured materials with tailored structural properties are achieved. Prior studies reported the mechanical properties of high strength cellular ceramic composites, obtained by atomic layer deposition. However, few studies have examined the properties of similar structures with metal coatings. To determine the mechanical performance of polymer cellular structures reinforced with a metal coating, 3D laser lithography and electroless deposition of an amorphous layer of nickel-boron (NiB) is used for the first time to produce metal/polymer hybrid structures. In this work, the mechanical response of microarchitectured structures is investigated with an emphasis on the effects of the architecture and the amorphous NiB thickness on their deformation mechanisms and energy absorption capability. Microcompression experiments show an enhancement of the mechanical properties with the NiB thickness, suggesting that the deformation mechanism and the buckling behavior are controlled by the brittle-to-ductile transition in the NiB layer. In addition, the energy absorption properties demonstrate the possibility of tuning the energy absorption efficiency with adequate designs. These findings suggest that microarchitectured metal/polymer hybrid structures are effective in producing materials with unique property combinations. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poletika, T. M., E-mail: poletm@ispms.tsc.ru; Girsova, S. L., E-mail: llm@ispms.tsc.ru; Meisner, L. L., E-mail: girs@ispms.tsc.ru

The structure of the surface and near-surface layers of single crystals of NiTi, differently oriented relative to the direction of ion beam treatment was investigated. The role of the crystallographic orientation in formation of structure of surface layers after ion-plasma alloying was revealed. It was found that the orientation effects of selective sputtering and channeling determine the thickness of the oxide and amorphous layers, the depth of penetration of ions and impurities, the distribution of Ni with depth.

Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

NASA Astrophysics Data System (ADS)

Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

2018-01-01

The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

Interface layer to tailor the texture and surface morphology of Al-doped ZnO polycrystalline films on glass substrates

NASA Astrophysics Data System (ADS)

Nomoto, Junichi; Inaba, Katsuhiko; Kobayashi, Shintaro; Makino, Hisao; Yamamoto, Tetsuya

2017-06-01

A 10-nm-thick radio frequency magnetron-sputtered aluminum-doped zinc oxide (AZO) showing a texture with a preferential (0001) orientation on amorphous glass substrates was used as an interface layer for tailoring the orientation of 490-nm-thick polycrystalline AZO films subsequently deposited by direct current (DC) magnetron sputtering at a substrate temperature of 200 °C. Wide-angle X-ray diffraction pole figure analysis showed that the resulting 500-nm-thick AZO films showed a texture with a highly preferential c-axis orientation. This showed that DC-magnetron-sputtered AZO films grew along with the orientation matching that of the interface layer, whereas 500-nm-thick AZO films deposited on bare glass substrates by DC magnetron sputtering exhibited a mixed orientation of the c-plane and other planes. The surface morphology was also improved while retaining the lateral grain size by applying the interface layer as revealed by atomic force microscopy.

Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

PubMed

Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

2014-07-23

Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

NASA Astrophysics Data System (ADS)

Palneedi, Haribabu; Maurya, Deepam; Kim, Gi-Yeop; Priya, Shashank; Kang, Suk-Joong L.; Kim, Kwang-Ho; Choi, Si-Young; Ryu, Jungho

2015-07-01

A highly dense, 4 μm-thick Pb(Zr,Ti)O3 (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration

NASA Astrophysics Data System (ADS)

Chen, G. S.; Chen, S. T.

2000-06-01

Tantalum-related thin films containing different amounts of nitrogen are sputter deposited at different argon-to-nitrogen flow rate ratios on (100) silicon substrates. Using x-ray diffractometry, transmission electron microscopy, composition and resistivity analyses, and bending-beam stress measurement technique, this work examines the impact of varying the nitrogen flow rate, particularly on the crystal structure, composition, resistivity, and residual intrinsic stress of the deposited Ta2N thin films. With an adequate amount of controlled, reactive nitrogen in the sputtering gas, thin films of the tantalum nitride of nominal formula Ta2N are predominantly amorphous and can exist over a range of nitrogen concentrations slightly deviated from stoichiometry. The single-layered quasi-amorphous Ta2N (a-Ta2N) thin films yield intrinsic compressive stresses in the range 3-5 GPa. In addition, the use of the 40-nm-thick a-Ta2N thin films with different nitrogen atomic concentrations (33% and 36%) and layering designs as diffusion barriers between silicon and copper are also evaluated. When subjected to high-temperature annealing, the single-layered a-Ta2N barrier layers degrade primarily by an amorphous-to-crystalline transition of the barrier layers. Crystallization of the single-layered stoichiometric a-Ta2N (Ta67N33) diffusion barriers occurs at temperatures as low as 450 °C. Doing so allows copper to preferentially penetrate through the grain boundaries or thermal-induced microcracks of the crystallized barriers and react with silicon, sequentially forming {111}-facetted pyramidal Cu3Si precipitates and TaSi2 Overdoping nitrogen into the amorphous matrix can dramatically increase the crystallization temperature to 600 °C. This temperature increase slows down the inward diffusion of copper and delays the formation of both silicides. The nitrogen overdoped Ta2N (Ta64N36) diffusion barriers can thus be significantly enhanced so as to yield a failure temperature 100 °C greater than that of the Ta67N33 diffusion barriers. Moreover, multilayered films, formed by alternately stacking the Ta67N33 and Ta64N36 layers with an optimized bilayer thickness (λ) of 10 nm, can dramatically reduce the intrinsic compressive stress to only 0.7 GPa and undergo high-temperature annealing without crystallization. Therefore, the Ta67N33/Ta64N36 multilayered films exhibit a much better barrier performance than the highly crystallization-resistant Ta64N36 single-layered films.

Planarized thick copper gate polycrystalline silicon thin film transistors for ultra-large AMOLED displays

NASA Astrophysics Data System (ADS)

Yun, Seung Jae; Lee, Yong Woo; Son, Se Wan; Byun, Chang Woo; Reddy, A. Mallikarjuna; Joo, Seung Ki

2012-08-01

A planarized thick copper (Cu) gate low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) is fabricated for ultra-large active-matrix organic light-emitting diode (AMOLED) displays. We introduce a damascene and chemical mechanical polishing process to embed a planarized Cu gate of 500 nm thickness into a trench and Si3N4/SiO2 multilayer gate insulator, to prevent the Cu gate from diffusing into the silicon (Si) layer at 550°C, and metal-induced lateral crystallization (MILC) technology to crystallize the amorphous Si layer. A poly-Si TFT with planarized thick Cu gate exhibits a field effect mobility of 5 cm2/Vs and a threshold voltage of -9 V, and a subthreshold swing (S) of 1.4 V/dec.

Development of Pinhole-Free Amorphous Aluminum Oxide Protective Layers for Biomedical Device Applications

PubMed Central

Litvinov, Julia; Wang, Yi-Ju; George, Jinnie; Chinwangso, Pawilai; Brankovic, Stanko; Willson, Richard C.; Litvinov, Dmitri

2013-01-01

This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures. PMID:23682201

Temperature dependence of copper diffusion in different thickness amorphous tungsten/tungsten nitride layer

NASA Astrophysics Data System (ADS)

Asgary, Somayeh; Hantehzadeh, Mohammad Reza; Ghoranneviss, Mahmood

2017-11-01

The amorphous W/WN films with various thickness (10, 30 and 40 nm) and excellent thermal stability were successfully prepared on SiO2/Si substrate with evaporation and reactive evaporation method. The W/WN bilayer has technological importance because of its low resistivity, high melting point, and good diffusion barrier properties between Cu and Si. The thermal stability was evaluated by X-ray diffractometer (XRD) and Scanning Electron Microscope (SEM). In annealing process, the amorphous W/WN barrier crystallized and this phenomenon is supposed to be the start of Cu atoms diffusion through W/WN barrier into Si. With occurrence of the high-resistive Cu3Si phase, the W/WN loses its function as a diffusion barrier. The primary mode of Cu diffusion is the diffusion through grain boundaries that form during heat treatments. The amorphous structure with optimum thickness is the key factor to achieve a superior diffusion barrier characteristic. The results show that the failure temperature increased by increasing the W/WN film thickness from 10 to 30 nm but it did not change by increasing the W/WN film thickness from 30 to 40 nm. It is found that the 10 and 40 nm W/WN films are good diffusion barriers at least up to 800°C while the 30 nm W/WN film shows superior properties as a diffusion barrier, but loses its function as a diffusion barrier at about 900°C (that is 100°C higher than for 10 and 40 nm W/WN films).

Structural properties of H-implanted InP crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bocchi, C.; Franzosi, P.; Lazzarini, L.

1993-07-01

H has been implanted in InP crystals at the energy E [equals] 100 keV and at different doses ranging from [sigma] [equals] 1 x 10[sup 13] to [sigma] [equals] 5 x 10[sup 16] cm[sup [minus]2]. The depth dependence of the elastic lattice strain has been investigated by high resolution X-ray diffractometry. The implantation produces a lattice dilation. The strain increases with increasing depth, reaches the maximum at about 0.75 [mu]m, and then decreases rapidly; moreover the maximum strain is proportional to the dose. No extended crystal defects have been detected by transmission electron microscopy up to [sigma] <1 x 10[supmore » 16] cm[sup [minus]2] a buried amorphous layer 28 nm in thickness has been observed at the same depth where the strain is maximum. The thickness of the amorphous layer increases by further increasing the dose and reaches a value of about 0.18 [mu]m for [sigma] [equals] 5 x 10[sup 16] cm[sup [minus]2].« less

Characterization of BN rich layer on ammonia treated Nextel{trademark}312 fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khasgiwale, N.R.; Butler, E.P.; Tsakalakos, L.

A BN rich layer grown on Nextel{trademark}312 fibers by appropriate ammonia treatments was evaluated using various complimentary techniques including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM)/Parallel Electron Energy Loss Spectroscopy (PEELS in TEM). Three different ammonia treatments were studied. Ammonia treatment resulted in crystallization of the Nextel{trademark}312 fiber. The BN rich surface layer formed due to ammonia treatment was clearly detected in XPS and PEELS both before and after oxidation. The layer thickness was estimated to be between 5--10 nm. The layer was stable after oxidation treatment at 600 C formore » 100 hours. High resolution TEM observations of the fiber surface revealed a variable BN rich layer thickness. Patches of turbostratic BN were observed under certain conditions, however mostly the layer appeared to be amorphous.« less

Characterization of crystal structure features of a SIMOX substrate

NASA Astrophysics Data System (ADS)

Eidelman, K. B.; Shcherbachev, K. D.; Tabachkova, N. Yu.; Podgornii, D. A.; Mordkovich, V. N.

2015-12-01

The SIMOX commercial sample (Ibis corp.) was investigated by a high-resolution X-ray diffraction (HRXRD), a high-resolution transmission electron microscopy (HRTEM) and an Auger electron spectroscopy (AES) to determine its actual parameters (the thickness of the top Si and a continuous buried oxide layer (BOX), the crystalline quality of the top Si layer). Under used implantation conditions, the thickness of the top Si and BOX layers was 200 nm and 400 nm correspondingly. XRD intensity distribution near Si(0 0 4) reciprocal lattice point was investigated. According to the oscillation period of the diffraction reflection curve defined thickness of the overtop silicon layer (220 ± 2) nm. HRTEM determined the thickness of the oxide layer (360 nm) and revealed the presence of Si islands with a thickness of 30-40 nm and a length from 30 to 100 nm in the BOX layer nearby "BOX-Si substrate" interface. The Si islands are faceted by (1 1 1) and (0 0 1) faces. No defects were revealed in these islands. The signal from Si, which corresponds to the particles in an amorphous BOX matrix, was revealed by AES in the depth profiles. Amount of Si single crystal phase at the depth, where the particles are deposited, is about 10-20%.

Induced spin-polarization of EuS at room temperature in Ni/EuS multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poulopoulos, P., E-mail: poulop@upatras.gr; Materials Science Department, University of Patras, 26504 Patras; Goschew, A.

2014-03-17

Ni/EuS multilayers with excellent multilayer sequencing are deposited via e-beam evaporation on the native oxide of Si(100) wafers at 4 × 10{sup −9} millibars. The samples have very small surface and interface roughness and show sharp interfaces. Ni layers are nanocrystalline 4–8 nm thick and EuS layers are 2–4 nm thick and are either amorphous or nanocrystalline. Unlike for Co/EuS multilayers, all Eu ions are in divalent (ferromagnetic) state. We show a direct antiferromagnetic coupling between EuS and Ni layers. At room temperature, the EuS layers are spin-polarized due to the proximity of Ni. Therefore, Ni/EuS is a candidate for room-temperature spintronics applications.

Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction

NASA Astrophysics Data System (ADS)

Fong, S. W.; Sood, A.; Chen, L.; Kumari, N.; Asheghi, M.; Goodson, K. E.; Gibson, G. A.; Wong, H.-S. P.

2016-07-01

In this work, we investigate the temperature-dependent thermal conductivities of few nanometer thick alternating stacks of amorphous dielectrics, specifically SiO2/Al2O3 and SiO2/Si3N4. Experiments using steady-state Joule-heating and electrical thermometry, while using a micro-miniature refrigerator over a wide temperature range (100-500 K), show that amorphous thin-film multilayer SiO2/Si3N4 and SiO2/Al2O3 exhibit through-plane room temperature effective thermal conductivities of about 1.14 and 0.48 W/(m × K), respectively. In the case of SiO2/Al2O3, the reduced conductivity is attributed to lowered film density (7.03 → 5.44 × 1028 m-3 for SiO2 and 10.2 → 8.27 × 1028 m-3 for Al2O3) caused by atomic layer deposition of thin-films as well as a small, finite, and repeating thermal boundary resistance (TBR) of 1.5 m2 K/GW between dielectric layers. Molecular dynamics simulations reveal that vibrational mismatch between amorphous oxide layers is small, and that the TBR between layers is largely due to imperfect interfaces. Finally, the impact of using this multilayer dielectric in a dash-type phase-change memory device is studied using finite-element simulations.

Protecting hydrogenation-generated oxygen vacancies in BiVO4 photoanode for enhanced water oxidation with conformal ultrathin amorphous TiO2 layer

NASA Astrophysics Data System (ADS)

Zhang, Yang; Zhang, Xintong; Wang, Dan; Wan, Fangxu; Liu, Yichun

2017-05-01

Introducing appropriate amount of oxygen vacancies by hydrogenation treatment is a simple and efficient way to improve the photoelectrochemical performance of nanostructured oxide photoanodes. However, the hydrogenation effect is often not durable due to the gradual healing of oxygen vacancies at or close to surface of photoanodes. Herein, we tackled the problem by conformal coating the hydrogenated nanoporous BiVO4 (H-BiVO4) photoanode with an ultrathin layer of amorphous TiO2. Photoelectrochemical measurements showed that a 4 nm-thick TiO2 layer could significantly improve the stability of H-BiVO4 photoanode for repeated working test, with negligible influence on the initial photocurrent compared to the uncoated one. Mott-Schottky and linear sweep voltammetry measurements showed that donor density and photocurrent density of the H-BiVO4 electrode almost decayed to the values of pristine BiVO4 electrode after 3 h test, while the amorphous TiO2-coated electrode only degraded by 6% and 5% of the initial values respectively in the same period. The investigation thus suggested that the amorphous TiO2 layer did protect the oxygen vacancies in H-BiVO4 photoanode by isolating these oxygen vacancies from environmental oxygen, while at the same time not impeding the interfacial charge transfer to water molecules due to its leaky nature.

Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

NASA Astrophysics Data System (ADS)

Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

2003-06-01

White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

High-Temperature Annealing as a Method for the Silicon Nanoclusters Growth in Stoichiometric Silicon Dioxide

NASA Astrophysics Data System (ADS)

Ivanova, E. V.; Dementev, P. A.; Sitnikova, A. A.; Aleksandrov, O. V.; Zamoryanskaya, M. V.

2018-07-01

A method for the growth of nanocomposite layers in stoichiometric amorphous silicon dioxide is proposed. It is shown that, after annealing at a temperature of 1150°C in nitrogen atmosphere, a layer containing silicon nanoclusters is formed. Silicon nanoclusters have a crystal structure and a size of 3-6 nm. In a film grown on a n-type substrate, a layer of silicon nanoclusters with a thickness of about 10 nm is observed. In the case of a film grown on a p-type substrate, a nanocomposite layer with a thickness of about 100 nm is observed. The difference in the formation of a nanocomposite layer in films on various substrates is associated with the doping of silicon dioxide with impurities from the substrate during the growth of the film. The formation of the nanocomposite layer was confirmed by transmission electron microscopy, XPS and local cathodoluminescence studies.

Optimisation of readout performance of phase-change probe memory in terms of capping layer and probe tip

NASA Astrophysics Data System (ADS)

Wang, Lei; Wright, C. David; Aziz, Mustafa. M.; Yang, Ci Hui; Yang, Guo Wei

2014-11-01

The capping layer and the probe tip that serve as the protective layer and the recording tool, respectively, for phase-change probe memory play an important role on the writing performance of phase-change probe memory, thus receiving considerable attention. On the other hand, their influence on the readout performance of phasechange probe memory has rarely been reported before. A three-dimensional parametric study based on the Laplace equation was therefore conducted to investigate the effect of the capping layer and the probe tip on the resulting reading contrast for the two cases of reading a crystalline bit from an amorphous matrix and reading an amorphous bit from a crystalline matrix. The results indicated that a capping layer with a thickness of 2 nm and an electrical conductivity of 50 Ω-1m-1 is able to provide an appropriate reading contrast for both the cases, while satisfying the previous writing requirement, particularly with the assistance of a platinum silicide probe tip.

Amorphous silicon as high index photonic material

NASA Astrophysics Data System (ADS)

Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

2009-05-01

Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xiaotie; Rudawski, Nicholas G.; Appleton, Bill R.

2016-07-14

In this paper, we report a systematic study that shows how the numerous processing parameters associated with ion implantation (II) and pulsed laser annealing (PLA) can be manipulated to control the quantity and quality of graphene (G), few-layer graphene (FLG), and other carbon nanostructures selectively synthesized in crystalline SiC (c-SiC). Controlled implantations of Si{sup −} plus C{sup −} and Au{sup +} ions in c-SiC showed that both the thickness of the amorphous layer formed by ion damage and the doping effect of the implanted Au enhance the formation of G and FLG during PLA. The relative contributions of the amorphousmore » and doping effects were studied separately, and thermal simulation calculations were used to estimate surface temperatures and to help understand the phase changes occurring during PLA. In addition to the amorphous layer thickness and catalytic doping effects, other enhancement effects were found to depend on other ion species, the annealing environment, PLA fluence and number of pulses, and even laser frequency. Optimum II and PLA conditions are identified and possible mechanisms for selective synthesis of G, FLG, and carbon nanostructures are discussed.« less

Structure and dynamics of shear bands in amorphous–crystalline nanolaminates

DOE PAGES

Guo, Wei; Gan, Bin; Molina-Aldareguia, Jon M.; ...

2015-08-03

In this paper, the velocities of shear bands in amorphous CuZr/crystalline Cu nanolaminates were quantified as a function of strain rate and crystalline volume fraction. A rate-dependent transition in flow response was found in a 100 nm CuZr/10 nm Cu nanolaminates. When increasing the Cu layer thickness from 10 nm to 100 nm, the instantaneous velocity of the shear band in these nanolaminates decreases from 11.2 μm/s to <~500 nm/s. Finally, atom probe tomography and transmission election microcopy observation revealed that in post-deformed pillars both grain rotation in the crystalline portion and non-diffusive crystallization in the amorphous layer affect themore » viscosity of shear bands.« less

Effects of a capping oxide layer on polycrystalline-silicon thin-film transistors fabricated by continuous-wave laser crystallization

NASA Astrophysics Data System (ADS)

Li, Yi-Shao; Wu, Chun-Yi; Chou, Chia-Hsin; Liao, Chan-Yu; Chuang, Kai-Chi; Luo, Jun-Dao; Li, Wei-Shuo; Cheng, Huang-Chung

2018-06-01

A tetraethyl-orthosilicate (TEOS) capping oxide was deposited by low-pressure chemical vapor deposition (LPCVD) on a 200-nm-thick amorphous Si (a-Si) film as a heat reservoir to improve the crystallinity and surface roughness of polycrystalline silicon (poly-Si) formed by continuous-wave laser crystallization (CLC). The effects of four thicknesses of the capping oxide layer to satisfy an antireflection condition, namely, 90, 270, 450, and 630 nm, were investigated. The largest poly-Si grain size of 2.5 × 20 µm2 could be achieved using a capping oxide layer with an optimal thickness of 450 nm. Moreover, poly-Si nanorod (NR) thin-film transistors (TFTs) fabricated using the aforementioned technique exhibited a superior electron field-effect mobility of 1093.3 cm2 V‑1 s‑1 and an on/off current ratio of 2.53 × 109.

Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palneedi, Haribabu; Functional Ceramics Group, Korea Institute of Materials Science; Maurya, Deepam

2015-07-06

A highly dense, 4 μm-thick Pb(Zr,Ti)O{sub 3} (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, amore » colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.« less

Single-layer and dual-layer contrast-enhanced mammography using amorphous selenium flat panel detectors

NASA Astrophysics Data System (ADS)

Allec, N.; Abbaszadeh, S.; Karim, K. S.

2011-09-01

The accumulation of injected contrast agents allows the image enhancement of lesions through the use of contrast-enhanced mammography. In this technique, the combination of two acquired images is used to create an enhanced image. There exist several methods to acquire the images to be combined, which include dual energy subtraction using a single detection layer that suffers from motion artifacts due to patient motion between image acquisition. To mitigate motion artifacts, a detector composed of two layers may be used to simultaneously acquire the low and high energy images. In this work, we evaluate both of these methods using amorphous selenium as the detection material to find the system parameters (tube voltage, filtration, photoconductor thickness and relative intensity ratio) leading to the optimal performance. We then compare the performance of the two detectors under the variation of contrast agent concentration, tumor size and dose. The detectability was found to be most comparable at the lower end of the evaluated factors. The single-layer detector not only led to better contrast, due to its greater spectral separation capabilities, but also had lower quantum noise. The single-layer detector was found to have a greater detectability by a factor of 2.4 for a 2.5 mm radius tumor having a contrast agent concentration of 1.5 mg ml-1 in a 4.5 cm thick 50% glandular breast. The inclusion of motion artifacts in the comparison is part of ongoing research efforts.

Single-layer and dual-layer contrast-enhanced mammography using amorphous selenium flat panel detectors.

PubMed

Allec, N; Abbaszadeh, S; Karim, K S

2011-09-21

The accumulation of injected contrast agents allows the image enhancement of lesions through the use of contrast-enhanced mammography. In this technique, the combination of two acquired images is used to create an enhanced image. There exist several methods to acquire the images to be combined, which include dual energy subtraction using a single detection layer that suffers from motion artifacts due to patient motion between image acquisition. To mitigate motion artifacts, a detector composed of two layers may be used to simultaneously acquire the low and high energy images. In this work, we evaluate both of these methods using amorphous selenium as the detection material to find the system parameters (tube voltage, filtration, photoconductor thickness and relative intensity ratio) leading to the optimal performance. We then compare the performance of the two detectors under the variation of contrast agent concentration, tumor size and dose. The detectability was found to be most comparable at the lower end of the evaluated factors. The single-layer detector not only led to better contrast, due to its greater spectral separation capabilities, but also had lower quantum noise. The single-layer detector was found to have a greater detectability by a factor of 2.4 for a 2.5 mm radius tumor having a contrast agent concentration of 1.5 mg ml(-1) in a 4.5 cm thick 50% glandular breast. The inclusion of motion artifacts in the comparison is part of ongoing research efforts.

Microscopic structure and electrical transport property of sputter-deposited amorphous indium-gallium-zinc oxide semiconductor films

NASA Astrophysics Data System (ADS)

Yabuta, H.; Kaji, N.; Shimada, M.; Aiba, T.; Takada, K.; Omura, H.; Mukaide, T.; Hirosawa, I.; Koganezawa, T.; Kumomi, H.

2014-06-01

We report on microscopic structures and electrical and optical properties of sputter-deposited amorphous indium-gallium-zinc oxide (a-IGZO) films. From electron microscopy observations and an x-ray small angle scattering analysis, it has been confirmed that the sputtered a-IGZO films consist of a columnar structure. However, krypton gas adsorption measurement revealed that boundaries of the columnar grains are not open-pores. The conductivity of the sputter-deposited a-IGZO films shows a change as large as seven orders of magnitude depending on post-annealing atmosphere; it is increased by N2-annealing and decreased by O2-annealing reversibly, at a temperature as low as 300°C. This large variation in conductivity is attributed to thermionic emission of carrier electrons through potential barriers at the grain boundaries, because temperature dependences of the carrier density and the Hall mobility exhibit thermal activation behaviours. The optical band-gap energy of the a-IGZO films changes between before and after annealing, but is independent of the annealing atmosphere, in contrast to the noticeable dependence of conductivity described above. For exploring other possibilities of a-IGZO, we formed multilayer films with an artificial periodic lattice structure consisting of amorphous InO, GaO, and ZnO layers, as an imitation of the layer-structured InGaZnO4 homologous phase. The hall mobility of the multilayer films was almost constant for thicknesses of the constituent layer between 1 and 6 Å, suggesting rather small contribution of lateral two-dimensional conduction It increased with increasing the thickness in the range from 6 to 15 Å, perhaps owing to an enhancement of two-dimensional conduction in InO layers.

Interface morphology of Mo/Si multilayer systems with varying Mo layer thickness studied by EUV diffuse scattering.

PubMed

Haase, Anton; Soltwisch, Victor; Braun, Stefan; Laubis, Christian; Scholze, Frank

2017-06-26

We investigate the influence of the Mo-layer thickness on the EUV reflectance of Mo/Si mirrors with a set of unpolished and interface-polished Mo/Si/C multilayer mirrors. The Mo-layer thickness is varied in the range from 1.7 nm to 3.05 nm. We use a novel combination of specular and diffuse intensity measurements to determine the interface roughness throughout the multilayer stack and do not rely on scanning probe measurements at the surface only. The combination of EUV and X-ray reflectivity measurements and near-normal incidence EUV diffuse scattering allows to reconstruct the Mo layer thicknesses and to determine the interface roughness power spectral density. The data analysis is conducted by applying a matrix method for the specular reflection and the distorted-wave Born approximation for diffuse scattering. We introduce the Markov-chain Monte Carlo method into the field in order to determine the respective confidence intervals for all reconstructed parameters. We unambiguously detect a threshold thickness for Mo in both sample sets where the specular reflectance goes through a local minimum correlated with a distinct increase in diffuse scatter. We attribute that to the known appearance of an amorphous-to-crystallization transition at a certain thickness threshold which is altered in our sample system by the polishing.

Fabrication mechanism of friction-induced selective etching on Si(100) surface

PubMed Central

2012-01-01

As a maskless nanofabrication technique, friction-induced selective etching can easily produce nanopatterns on a Si(100) surface. Experimental results indicated that the height of the nanopatterns increased with the KOH etching time, while their width increased with the scratching load. It has also found that a contact pressure of 6.3 GPa is enough to fabricate a mask layer on the Si(100) surface. To understand the mechanism involved, the cross-sectional microstructure of a scratched area was examined, and the mask ability of the tip-disturbed silicon layer was studied. Transmission electron microscope observation and scanning Auger nanoprobe analysis suggested that the scratched area was covered by a thin superficial oxidation layer followed by a thick distorted (amorphous and deformed) layer in the subsurface. After the surface oxidation layer was removed by HF etching, the residual amorphous and deformed silicon layer on the scratched area can still serve as an etching mask in KOH solution. The results may help to develop a low-destructive, low-cost, and flexible nanofabrication technique suitable for machining of micro-mold and prototype fabrication in micro-systems. PMID:22356699

Fabrication mechanism of friction-induced selective etching on Si(100) surface.

PubMed

Guo, Jian; Song, Chenfei; Li, Xiaoying; Yu, Bingjun; Dong, Hanshan; Qian, Linmao; Zhou, Zhongrong

2012-02-23

As a maskless nanofabrication technique, friction-induced selective etching can easily produce nanopatterns on a Si(100) surface. Experimental results indicated that the height of the nanopatterns increased with the KOH etching time, while their width increased with the scratching load. It has also found that a contact pressure of 6.3 GPa is enough to fabricate a mask layer on the Si(100) surface. To understand the mechanism involved, the cross-sectional microstructure of a scratched area was examined, and the mask ability of the tip-disturbed silicon layer was studied. Transmission electron microscope observation and scanning Auger nanoprobe analysis suggested that the scratched area was covered by a thin superficial oxidation layer followed by a thick distorted (amorphous and deformed) layer in the subsurface. After the surface oxidation layer was removed by HF etching, the residual amorphous and deformed silicon layer on the scratched area can still serve as an etching mask in KOH solution. The results may help to develop a low-destructive, low-cost, and flexible nanofabrication technique suitable for machining of micro-mold and prototype fabrication in micro-systems.

Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

PubMed Central

Marrs, Michael A.; Raupp, Gregory B.

2016-01-01

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate. PMID:27472329

Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

PubMed

Marrs, Michael A; Raupp, Gregory B

2016-07-26

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

Thin film solar cell including a spatially modulated intrinsic layer

DOEpatents

Guha, Subhendu; Yang, Chi-Chung; Ovshinsky, Stanford R.

1989-03-28

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Mechanical properties and structure evolution of single-crystalline silicon irradiated by 1 MeV Au+ and Cu+ ions

NASA Astrophysics Data System (ADS)

Liang, Wei; Zhu, Fei; Ling, Yunhan; Liu, Kezhao; Hu, Yin; Pan, Qifa; Chen, Limin; Zhang, Zhengjun

2018-05-01

Mechanical and structural evolutions of single-crystalline silicon irradiated by a series of doses 1 MeV Au+ ions and Cu+ ions are characterized by Surface laser-acoustic wave spectroscopy by (LA wave), Rutherford backscattering spectrometry and channeling (RBS/C) and transmission electron microscopy (TEM). The behavior of implanted Au+ and Cu+ ions was also simulated by using Stopping and range of ions in matter (SRIM) software package, respectively. It is demonstrated that LA wave and RBS could be applied for accurate evaluation of the TEM observed amorphous layer's thickness. The modified mechanical properties depend on the species and the dose of implantation. For 1 MeV Au+ ions, the threshold dose of completely amorphous is 5 × 1014 atoms/cm2, while the one for Cu+ ions is 5 × 1015 atoms/cm2. Upon completely amorphous, the young's modulus and layer density decreased significantly while saturated with the dose increasing sequentially.

Molecular dynamics simulations of Li transport between cathode crystals

NASA Astrophysics Data System (ADS)

Garofalini, S. H.

The molecular dynamics (MD) computer simulation technique has been used to study the effect of an amorphous intergranular film (IGF) present in a polycrystalline cathode on Li transport. The solid electrolyte is a model lithium silicate glass while the cathode is a nanocrystalline vanadia with an amorphous V 2O 5 IGF separating the crystals. Thin (˜1 to a few nanometer thick) IGFs are known to be present in most polycrystalline oxide materials. However, the role of such a film on Li transport in oxide cathodes has not been addressed. Current scanning probe microscopy (SPM) studies have shown that the orientation of the layered nanocrystalline vanadia crystals near the cathode/solid electrolyte interface is not optimized for Li ion transport. While the precise structure of the material between the crystals has not been identified, initially it can be initially considered as likely to be a thin non-crystalline (amorphous) film. This is based on the ubiquitous presence of such a structure in other polycrystalline oxides. Also, and with more relevance to the materials used in thin film batteries, an amorphous film can be expected to form between nanocrystals that crystallized from an amorphous matrix, as would be the case in a deposited thin film cathode. Consistent with simulations of Li transport in amorphous vanadia, the current simulations show that Li ions diffuse more rapidly into the amorphous intergranular thin film than into the layered vanadia with the (0 0 1) planes parallel to the cathode/electrolyte interface.

Addressing the amorphous content issue in quantitative phase analysis: the certification of NIST standard reference material 676a.

PubMed

Cline, James P; Von Dreele, Robert B; Winburn, Ryan; Stephens, Peter W; Filliben, James J

2011-07-01

A non-diffracting surface layer exists at any boundary of a crystal and can comprise a mass fraction of several percent in a finely divided solid. This has led to the long-standing issue of amorphous content in standards for quantitative phase analysis (QPA). NIST standard reference material (SRM) 676a is a corundum (α-Al(2)O(3)) powder, certified with respect to phase purity for use as an internal standard in powder diffraction QPA. The amorphous content of SRM 676a is determined by comparing diffraction data from mixtures with samples of silicon powders that were engineered to vary their specific surface area. Under the (supported) assumption that the thickness of an amorphous surface layer on Si was invariant, this provided a method to control the crystalline/amorphous ratio of the silicon components of 50/50 weight mixtures of SRM 676a with silicon. Powder diffraction experiments utilizing neutron time-of-flight and 25 keV and 67 keV X-ray energies quantified the crystalline phase fractions from a series of specimens. Results from Rietveld analyses, which included a model for extinction effects in the silicon, of these data were extrapolated to the limit of zero amorphous content of the Si powder. The certified phase purity of SRM 676a is 99.02% ± 1.11% (95% confidence interval). This novel certification method permits quantification of amorphous content for any sample of interest, by spiking with SRM 676a.

Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

PubMed

Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

2016-12-01

For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

Preparation of TiO(2) layers on cp-Ti and Ti6Al4V by thermal and anodic oxidation and by sol-gel coating techniques and their characterization.

PubMed

Velten, D; Biehl, V; Aubertin, F; Valeske, B; Possart, W; Breme, J

2002-01-01

The excellent biocompatibility of titanium and its alloys used, for example, for medical devices, is associated with the properties of their surface oxide. For a better understanding of the tissue reaction in contact with the oxide layer, knowledge of the chemical and physical properties of this layer is of increasing interest. In this study, titania films were produced on cp-Ti and Ti6Al4V substrates by thermal oxidation, anodic oxidation, and by the sol-gel process. The thickness and structure of the films produced under different conditions were determined by ellipsometry, infrared spectroscopy, and X-ray diffraction measurements. The corrosion properties of these layers were investigated by current density-potential curves under physiological conditions. The oxide layers produced on cp-Ti and Ti6Al4V by thermal oxidation consist of TiO(2) in the rutile structure. For the anodized samples the structure of TiO(2) is a mixture of amorphous phase and anatase. The structure of the coatings produced by the sol-gel process for a constant annealing time depends on the annealing temperature, and with increasing temperature successively amorphous, anatase, and rutile structure is observed. Compared to the uncoated, polished substrate with a natural oxide layer, the corrosion resistance of cp-Ti and Ti6Al4V is increased for the samples with an oxide layer thickness of about 100 nm, independent of the oxidation procedure. Copyright 2001 John Wiley & Sons, Inc.

Study on thick film spin-on carbon hardmask

NASA Astrophysics Data System (ADS)

Kim, Taeho; Kim, Youngmin; Hwang, Sunmin; Lee, Hyunsoo; Han, Miyeon; Lim, Sanghak

2017-03-01

A thick spin-on carbon hardmask (SOH) material is designed to overcome inherent problems of amorphous deposited carbon layer (ACL) and thick photoresist. For ACL in use of semiconductor production process, especially when film thickness from sub-micrometer up to few micrometers is required, not only its inherent low transparency at long wavelength light often causes alignment problems with under layers, but also considerable variation of film thickness within a wafer can also cause patterning problems. To avoid these issues, a thick SOH is designed with monomers of high transparency and good solubility at the same time. In comparison with photoresist, the SOH has good etch resistance and high thermal stability, and it provides wide process window of decreased film thickness and increased thermal budget up to 400°C after processes such as high temperature deposition of SiON. In order to achieve high thickness along with uniform film, many solvent factors was considered such as solubility parameter, surface tension, vapor pressure, and others. By optimizing many solvent factors, we were able to develop a product with a good coating performance

Microchemical and Structural Evidence for Space Weathering in Soils from Asteroid Itokawa

NASA Technical Reports Server (NTRS)

Thompson, M. S.; Christoffersen, R.; Zega, T. J.

2013-01-01

The chemistry, microstructure and optical properties of grains on the surfaces of airless bodies are continu-ously modified due to their interactions predominantly with solar energetic ions and micrometeorite impacts. Collectively known as space weathering, this phenomenon results in a discrepancy between remotely sensed spectra from asteroids and those ac-quired directly from meteorites. The return of pristine samples from the asteroid Itokawa provides insight into surface processes on airless bodies and will help in correlating remote sensing data with laboratory analysis of meteorites. Samples and Methods: We examined Itokawa samples RA-QD02-0042-01 and RA-QD-02-0042-02, ultramicrotomed sec-tions of a singular grain prepared by the Hayabusa sample cura-tion team. We analyzed these slices using a 200 keV JEOL 2010F transmission electron microscope (TEM) at Arizona State Uni-versity and a 200 keV JEOL 2500SE TEM at NASA JSC. Both field emission TEMs are equipped with energy-dispersive X-ray spectrometers (EDS) and scanning TEM (STEM) detectors. Results and Discussion: TEM observations reveal that the sectioned grain predominantly consists of a single crystal of low-Ca orthopyroxene, with subsidiary smaller regions of olivine, Fe-Ni sulfide, and Fe-Ni metal. EDS-spectrum imaging and high-resolution TEM (HRTEM) show local, nanocrystalline regions of the outermost 2 to 5 nm of the pyroxene are composed of an Fe-Mg-S-rich and Si- and O-depleted layer that is underlain by a 2- to 5-nm thick amorphous zone enriched in Si. These layers occur in multiple microtome slices and have uniform thicknesses. We also observe localized 'islands' of material on the surface of the pyroxene which HRTEM imaging indicates are amorphous and EDS measurements show are compositionally heterogeneous. A 10- to 60-nm thick partially amorphous zone occurs below the compositionally distinct rim. While this this zone is associated with the compositionally heterogeneous outer layer, it also occurs as a local stand-alone feature on the exterior rim of the grain. Ar-eas of the pyroxene grain rim also exhibit a vesicular texture. The TEM data indicate a complex history of space weather-ing for samples RA-QD02-0042-01 and -02. The outermost layer of nanocrystalline material with varied composition is consistent with previously suggested [3-4] chemical and structural pro-cessing by solar wind ions, with a possible additional role for im-pact vapor deposition [3-4]. The amorphous and compositionally distinct islands on the surface of this grain, similar to lunar glasses, suggest formation through vapor deposition via micrometeor-ite impact events. In comparison, the amorphization and vesicula-tion textures are likely a product of radiation damage from the solar wind. The depth and degree of amorphization, in conjunction with model calculations, will help provide an upper limit on exposure time for these particles.

Low-Impedance Compact Modulators Capable of Generating Intense Ultra-fast Rising Nanosecond Waveforms

DTIC Science & Technology

2006-10-31

spark gap is shown in Fig. 1. The Blumleins were constructed from copper plates separated by laminated layered Kapton (polyimide) dielectrics. Scaling... convolution factor. The diamond/GaAs heterojunction response is limited to a very thin layer across the cross section between amorphic diamond and GaAs...were fastened to electrode mounts and passed through the cast material of the base before it hardened. A thick kapton laminate 1.2 cm wide separated

Spectroscopic characterization of Greek dolomitic marble surface interacted with uranium and thorium in aqueous solutions

NASA Astrophysics Data System (ADS)

Godelitsas, A.; Kokkoris, M.; Chatzitheodoridis, E.; Misaelides, P.

2008-05-01

The surface of a typical Greek (Thassian) dolomitic marble was studied after interaction with U- and Th-containing aqueous solutions (1000 mg/L, free-drift experiments for 1 week at atmospheric PCO2), using 12C-RBS and Laser μ-Raman spectroscopy. Powder-XRD and SEM-EDS were also applied to investigate the phases deposited on the surface of the interacted samples. The obtained results indicated a considerable removal of U from the aqueous medium mainly due to massive surface precipitation of amorphous UO2-hydroxide phases forming a relatively thick (μm-sized) coating on the carbonate substrate. The interaction of Th with dolomitic marble surface is also intense leading to a formation of an amorphous Th-hydroxide layer of similar thickness but of significantly lower elemental atomic proportion.

Yttrium Iron Garnet Thin Films with Very Low Damping Obtained by Recrystallization of Amorphous Material

PubMed Central

Hauser, Christoph; Richter, Tim; Homonnay, Nico; Eisenschmidt, Christian; Qaid, Mohammad; Deniz, Hakan; Hesse, Dietrich; Sawicki, Maciej; Ebbinghaus, Stefan G.; Schmidt, Georg

2016-01-01

We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic. In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of α = (6.15 ± 1.50) · 10−5 is found and the linewidth at 9.6 GHz is as small as 1.30 ± 0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of α = (7.35 ± 1.40) · 10−5 is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49 ± 0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials. PMID:26860816

Electron beam-induced radiation damage: the bubbling response in amorphous dried sodium phosphate buffer.

PubMed

Massover, William H

2010-06-01

Irradiation of an amorphous layer of dried sodium phosphate buffer (pH = 7.0) by transmission electron microscopy (100-120 kV) causes rapid formation of numerous small spherical bubbles [10-100 A (= 1-10 nm)] containing an unknown gas. Bubbling is detected even with the first low-dose exposure. In a thin layer (ca. 100-150 A), bubbling typically goes through nucleation, growth, possible fusion, and end-state, after which further changes are not apparent; co-irradiated adjacent areas having a slightly smaller thickness never develop bubbles. In moderately thicker regions (ca. over 200 A), there is no end-state. Instead, a complex sequence of microstructural changes is elicited during continued intermittent high-dose irradiation: nucleation, growth, early simple fusions, a second round of extensive multiple fusions, general reduction of matrix thickness (producing flattening and expansion of larger bubbles, occasional bubble fission, and formation of very large irregularly-shaped bubbles by a third round of compound fusion events), and slow shrinkage of all bubbles. The ongoing lighter appearance of bubble lumens, maintenance of their rounded shape, and extensive changes in size and form indicate that gas content continues throughout their surprisingly long lifetime; the thin dense boundary layer surrounding all bubbles is proposed to be the main mechanism for their long lifetime.

Ballistic Phonon Penetration Depth in Amorphous Silicon Dioxide.

PubMed

Yang, Lin; Zhang, Qian; Cui, Zhiguang; Gerboth, Matthew; Zhao, Yang; Xu, Terry T; Walker, D Greg; Li, Deyu

2017-12-13

Thermal transport in amorphous silicon dioxide (a-SiO 2 ) is traditionally treated as random walks of vibrations owing to its greatly disordered structure, which results in a mean free path (MFP) approximately the same as the interatomic distance. However, this picture has been debated constantly and in view of the ubiquitous existence of thin a-SiO 2 layers in nanoelectronic devices, it is imperative to better understand this issue for precise thermal management of electronic devices. Different from the commonly used cross-plane measurement approaches, here we report on a study that explores the in-plane thermal conductivity of double silicon nanoribbons with a layer of a-SiO 2 sandwiched in-between. Through comparing the thermal conductivity of the double ribbon samples with that of corresponding single ribbons, we show that thermal phonons can ballistically penetrate through a-SiO 2 of up to 5 nm thick even at room temperature. Comprehensive examination of double ribbon samples with various oxide layer thicknesses and van der Waals bonding strengths allows for extraction of the average ballistic phonon penetration depth in a-SiO 2 . With solid experimental data demonstrating ballistic phonon transport through a-SiO 2 , this work should provide important insight into thermal management of electronic devices.

Biomimetic whisker-shaped apatite coating of titanium powder.

PubMed

Sim, Young Uk; Kim, Jong Hee; Yang, Tae Young; Yoon, Seog Young; Park, Hong Chae

2010-05-01

Biomimetic apatite coatings on chemically modified titanium powder have been processed and the resulting coating layers evaluated in terms of morphology, composition and structure, using TF-XRD, XPS, SEM, TEM and FTIR analysis. After 7 days immersion in a simulated body fluid (SBF), nanometer-sized fine precipitates with an amorphous whisker-like phase and a Ca/P atomic ratio of 1.94 were obtained on the external surface of the titanium particles. When the immersion time in SBF was extended to 16 days, the coating layer consisted of the whisker-like nanostructured crystals of carbonated hydroxyapatite with a atomic ratio of 3; in such a case, a double coating layer was developed. The double layer could be divided into two regions and could be clearly distinguished: an inner dense region (approximately 200 nm in thickness) which may include hard agglomerated crystals and an outer less dense region (> 500 nm in thickness) in which crystals are loosely distributed.

Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

NASA Astrophysics Data System (ADS)

Thi Thanh Nguyen, Huong; Balaji, Nagarajan; Park, Cheolmin; Triet, Nguyen Minh; Le, Anh Huy Tuan; Lee, Seunghwan; Jeon, Minhan; Oh, Donhyun; Dao, Vinh Ai; Yi, Junsin

2017-02-01

Excellent surface passivation and anti-reflection properties of double-stack layers is a prerequisite for high efficiency of n-type c-Si solar cells. The high positive fixed charge (Q f) density of N-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films plays a poor role in boron emitter passivation. The more the refractive index ( n ) of a-SiNx:H is decreased, the more the positive Q f of a-SiNx:H is increased. Hydrogenated amorphous silicon oxynitride (SiON) films possess the properties of amorphous silicon oxide (a-SiOx) and a-SiNx:H with variable n and less positive Q f compared with a-SiNx:H. In this study, we investigated the passivation and anti-reflection properties of Al2O3/SiON stacks. Initially, a SiON layer was deposited by plasma enhanced chemical vapor deposition with variable n and its chemical composition was analyzed by Fourier transform infrared spectroscopy. Then, the SiON layer was deposited as a capping layer on a 10 nm thick Al2O3 layer, and the electrical and optical properties were analyzed. The SiON capping layer with n = 1.47 and a thickness of 70 nm resulted in an interface trap density of 4.74 = 1010 cm-2 eV-1 and Q f of -2.59 = 1012 cm-2 with a substantial improvement in lifetime of 1.52 ms after industrial firing. The incorporation of an Al2O3/SiON stack on the front side of the n-type solar cells results in an energy conversion efficiency of 18.34% compared to the one with Al2O3/a-SiNx:H showing 17.55% efficiency. The short circuit current density and open circuit voltage increase by up to 0.83 mA cm-2 and 12 mV, respectively, compared to the Al2O3/a-SiNx:H stack on the front side of the n-type solar cells due to the good anti-reflection and front side surface passivation.

Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

DOE PAGES

Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; ...

2015-12-02

Ti/Al 2O 3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barriermore » properties but an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.« less

Surface-enhanced Raman scattering of amorphous silica gel adsorbed on gold substrates for optical fiber sensors

NASA Astrophysics Data System (ADS)

Degioanni, S.; Jurdyc, A. M.; Cheap, A.; Champagnon, B.; Bessueille, F.; Coulm, J.; Bois, L.; Vouagner, D.

2015-10-01

Two kinds of gold substrates are used to produce surface-enhanced Raman scattering (SERS) of amorphous silica obtained via the sol-gel route using tetraethoxysilane Si(OC2H5)4 (TEOS) solution. The first substrate consists of a gold nanometric film elaborated on a glass slide by sputter deposition, controlling the desired gold thickness and sputtering current intensity. The second substrate consists of an array of micrometer-sized gold inverted pyramidal pits able to confine surface plasmon (SP) enhancing electric field, which results in a distribution of electromagnetic energy inside the cavities. These substrates are optically characterized to observe SPR with, respectively, extinction and reflectance spectrometries. Once coated with thin layers of amorphous silica (SiO2) gel, these samples show Raman amplification of amorphous SiO2 bands. This enhancement can occur in SERS sensors using amorphous SiO2 gel as shells, spacers, protective coatings, or waveguides, and represents particularly a potential interest in the field of Raman distributed sensors, which use the amorphous SiO2 core of optical fibers as a transducer to make temperature measurements.

Systems and Methods for Fabricating Objects Including Amorphous Metal Using Techniques Akin to Additive Manufacturing

NASA Technical Reports Server (NTRS)

Hofmann, Douglas (Inventor)

2017-01-01

Systems and methods in accordance with embodiments of the invention fabricate objects including amorphous metals using techniques akin to additive manufacturing. In one embodiment, a method of fabricating an object that includes an amorphous metal includes: applying a first layer of molten metallic alloy to a surface; cooling the first layer of molten metallic alloy such that it solidifies and thereby forms a first layer including amorphous metal; subsequently applying at least one layer of molten metallic alloy onto a layer including amorphous metal; cooling each subsequently applied layer of molten metallic alloy such that it solidifies and thereby forms a layer including amorphous metal prior to the application of any adjacent layer of molten metallic alloy; where the aggregate of the solidified layers including amorphous metal forms a desired shape in the object to be fabricated; and removing at least the first layer including amorphous metal from the surface.

Addressing the amorphous content issue in quantitative phase analysis : the certification of NIST SRM 676a.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cline, J. P.; Von Dreele, R. B.; Winburn, R.

2011-07-01

A non-diffracting surface layer exists at any boundary of a crystal and can comprise a mass fraction of several percent in a finely divided solid. This has led to the long-standing issue of amorphous content in standards for quantitative phase analysis (QPA). NIST standard reference material (SRM) 676a is a corundum ({alpha}-Al{sub 2}O{sub 3}) powder, certified with respect to phase purity for use as an internal standard in powder diffraction QPA. The amorphous content of SRM 676a is determined by comparing diffraction data from mixtures with samples of silicon powders that were engineered to vary their specific surface area. Undermore » the (supported) assumption that the thickness of an amorphous surface layer on Si was invariant, this provided a method to control the crystalline/amorphous ratio of the silicon components of 50/50 weight mixtures of SRM 676a with silicon. Powder diffraction experiments utilizing neutron time-of-flight and 25 keV and 67 keV X-ray energies quantified the crystalline phase fractions from a series of specimens. Results from Rietveld analyses, which included a model for extinction effects in the silicon, of these data were extrapolated to the limit of zero amorphous content of the Si powder. The certified phase purity of SRM 676a is 99.02% {+-} 1.11% (95% confidence interval). This novel certification method permits quantification of amorphous content for any sample of interest, by spiking with SRM 676a.« less

Addressing the Amorphous Content Issue in Quantitative Phase Analysis: The Certification of NIST Standard Reference Material 676a

DOE Office of Scientific and Technical Information (OSTI.GOV)

J Cline; R Von Dreele; R Winburn

2011-12-31

A non-diffracting surface layer exists at any boundary of a crystal and can comprise a mass fraction of several percent in a finely divided solid. This has led to the long-standing issue of amorphous content in standards for quantitative phase analysis (QPA). NIST standard reference material (SRM) 676a is a corundum ({alpha}-Al{sub 2}O{sub 3}) powder, certified with respect to phase purity for use as an internal standard in powder diffraction QPA. The amorphous content of SRM 676a is determined by comparing diffraction data from mixtures with samples of silicon powders that were engineered to vary their specific surface area. Undermore » the (supported) assumption that the thickness of an amorphous surface layer on Si was invariant, this provided a method to control the crystalline/amorphous ratio of the silicon components of 50/50 weight mixtures of SRM 676a with silicon. Powder diffraction experiments utilizing neutron time-of-flight and 25 keV and 67 keV X-ray energies quantified the crystalline phase fractions from a series of specimens. Results from Rietveld analyses, which included a model for extinction effects in the silicon, of these data were extrapolated to the limit of zero amorphous content of the Si powder. The certified phase purity of SRM 676a is 99.02% {+-} 1.11% (95% confidence interval). This novel certification method permits quantification of amorphous content for any sample of interest, by spiking with SRM 676a.« less

Spacer layer thickness dependent structural and magnetic properties of Co/Si multilayers

NASA Astrophysics Data System (ADS)

Roy, Ranjan; Singh, Dushyant; Kumar, M. Senthil

2018-05-01

In this article, the study of high resolution x-ray diffraction and magnetization of sputter deposited Co/Si multilayer is reported. Multilayers are prepared at ambient temperature by dc magnetron sputtering. Structural properties are studied by high resolution x-ray diffraction. Magnetic properties are studied at room temperature by vibrating sample magnetometer. Structural properties show that the Co layer is polycrystalline and the Si layer is amorphous. The magnetization study indicates that the samples are soft ferromagnetic in nature. The study of magnetization also shows that the easy axis of magnetization lies in the plane of the film.

Reactions of NO2 with BaO/Pt(111) Model Catalysts: The Effects of BaO Film Thickness and NO2 Pressure on the Formation of Ba(NOx)2 Species

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mudiyanselage, Kumudu; Yi, Cheol-Woo; Szanyi, Janos

2011-05-31

The adsorption and reaction of NO2 on BaO (<1, ~3, and >20 monolayer equivalent (MLE))/Pt(111) model systems were studied with temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), and infrared reflection absorption spectroscopy (IRAS) under ultra-high vacuum (UHV) as well as elevated pressure conditions. NO2 reacts with sub-monolayer BaO (<1 MLE) to form nitrites only, whereas the reaction of NO2 with BaO (~3 MLE)/Pt(111) produces mainly nitrites and a small amount of nitrates under UHV conditions (PNO2 ~ 1.0 × 10-9 Torr) at 300 K. In contrast, a thick BaO(>20 MLE) layer on Pt(111) reacts with NO2 to form nitrite-nitratemore » ion pairs under the same conditions. At elevated NO2 pressures (≥ 1.0 × 10-5 Torr), however, BaO layers at all these three coverages convert to amorphous barium nitrates at 300 K. Upon annealing to 500 K, these amorphous barium nitrate layers transform into crystalline phases. The thermal decomposition of the thus-formed Ba(NOx)2 species is also influenced by the coverage of BaO on the Pt(111) substrate: at low BaO coverages, these species decompose at significantly lower temperatures in comparison with those formed on thick BaO films due to the presence of Ba(NOx)2/Pt interface where the decomposition can proceed at lower temperatures. However, the thermal decomposition of the thick Ba(NO3)2 films follows that of bulk nitrates. Results obtained from these BaO/Pt(111) model systems under UHV and elevated pressure conditions clearly demonstrate that both the BaO film thickness and the applied NO2 pressure are critical in the Ba(NOx)2 formation and subsequent thermal decomposition processes.« less

The Role of Ambient Gas and Pressure on the Structuring of Hard Diamond-Like Carbon Films Synthesized by Pulsed Laser Deposition

PubMed Central

Popescu, Andrei C.; Stan, George E.; Duta, Liviu; Nita, Cristina; Popescu, Camelia; Surdu, Vasile-Adrian; Husanu, Marius-Adrian; Bita, Bogdan; Ghisleni, Rudy; Himcinschi, Cameliu; Craciun, Valentin

2015-01-01

Hard carbon thin films were synthesized on Si (100) and quartz substrates by the Pulsed Laser Deposition (PLD) technique in vacuum or methane ambient to study their suitability for applications requiring high mechanical resistance. The deposited films’ surface morphology was investigated by scanning electron microscopy, crystalline status by X-ray diffraction, packing and density by X-ray reflectivity, chemical bonding by Raman and X-ray photoelectron spectroscopy, adherence by “pull-out” measurements and mechanical properties by nanoindentation tests. Films synthesized in vacuum were a-C DLC type, while films synthesized in methane were categorized as a-C:H. The majority of PLD films consisted of two layers: one low density layer towards the surface and a higher density layer in contact with the substrate. The deposition gas pressure played a crucial role on films thickness, component layers thickness ratio, structure and mechanical properties. The films were smooth, amorphous and composed of a mixture of sp3-sp2 carbon, with sp3 content ranging between 50% and 90%. The thickness and density of the two constituent layers of a film directly determined its mechanical properties.

Toward an understanding of surface layer formation, growth, and transformation at the glass-fluid interface

NASA Astrophysics Data System (ADS)

Hopf, J.; Eskelsen, J. R.; Chiu, M.; Ievlev, A. V.; Ovchinnikova, O. S.; Leonard, D.; Pierce, E. M.

2018-05-01

Silicate glass is a metastable and durable solid that has application to a number of energy and environmental challenges (e.g., microelectronics, fiber optics, and nuclear waste storage). If allowed to react with water over time silicate glass develops an altered layer at the solid-fluid interface. In this study, we used borosilicate glass (LAWB45) as a model material to develop a robust understanding of altered layer formation (i.e., amorphous hydrated surface layer and crystalline reaction products). Experiments were conducted at high surface area-to-volume ratio (∼200,000 m-1) and 90 °C in the pressurized unsaturated flow (PUF) apparatus for 1.5-years to facilitate the formation of thick altered layers and allow for the effluent solution chemistry to be monitored continuously. A variety of microscopy techniques were used to characterize reacted grains and suggest the average altered layer thickness is 13.2 ± 8.3 μm with the hydrated and clay layer representing 74.8% and 25.2% of the total altered layer, respectively. The estimate of hydrated layer thickness is within the experimental error of the value estimated from the B release rate data (∼10 ± 1 μm/yr) over the 1.5-year duration. PeakForce® quantitative nanomechanical mapping results suggest the hydrated layer has a modulus that ranges between ∼20 and 40 GPa, which is in the range of porous silica that contains from ∼20 to ∼50% porosity, yet significantly lower than dense silica (∼70-80 GPa). Scanning transmission electron microscopy (STEM) images confirm the presence of pores and an analysis of a higher resolution image provides a qualitative estimate of ≥22% porosity in the hydrated layer with variations in void volume with increasing distance from the unaltered glass. Chemical composition analyses, based on a combination of time-of-flight secondary-ion mass spectrometry (ToF-SIMS), scanning electron microscopy with X-ray energy dispersive spectroscopy (EDS), and STEM-EDS, clearly show that the altered layer is mainly composed of Al, H, Si, and O with the clay layer being enriched in Li, Zn, Fe, and Mg. The amorphous hydrated layer is enriched in Ca, H, and Zr with a minor amount of K. Furthermore, ToF-SIMS results also suggest the B profile is anti-correlated with the H profile in the hydrated layer. Our selected-area electron diffraction results suggest the structure of the hydrated layer closely resembles opal-AG (amorphous gel-like) with an average crystallite size of ∼0.7 nm which is smaller than the critical nucleus for silica nanoparticles (i.e., 1.4-3 nm). These results suggest the hydrated layer is more consistent with a polymeric gel rather than a colloidal gel and is comprised of molecular units (<1 nm in size) that result from the difficult to hydrolyze bonds, such as Sisbnd Osbnd Zr units, during the glass corrosion process. The size of individual particles or molecular units is a function of formation conditions (e.g., pH, ionic strength, nano-confinement, solute composition) in the hydrated layer.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

PubMed

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

PubMed Central

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-01

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future. PMID:28045075

3D Reconstruction of SPM Probes by Electron Tomography

NASA Astrophysics Data System (ADS)

Xu, X.; Peng, Y.; Saghi, Z.; Gay, R.; Inkson, B. J.; Möbus, G.

2007-04-01

Three-dimensional morphological and compositional structures of tungsten tips consisting of layered amorphous oxide shell and crystalline W core are reconstructed by electron tomography using both coherent and incoherent imaging modes. The fidelity of the reconstruction is dependent on three criteria, suppression of unwanted crystal orientation contrast in the crystalline core, nonlinear intensity-thickness relations above a certain thickness limit, and artefacts due to missing angular ranges when acquiring a tilt series of images. Annular dark field (ADF), and EDX chemical mapping are discussed as alternatives to standard bright field (BF) TEM imaging.

Use of XPS to clarify the Hall coefficient sign variation in thin niobium layers buried in silicon

NASA Astrophysics Data System (ADS)

Demchenko, Iraida N.; Lisowski, Wojciech; Syryanyy, Yevgen; Melikhov, Yevgen; Zaytseva, Iryna; Konstantynov, Pavlo; Chernyshova, Maryna; Cieplak, Marta Z.

2017-03-01

Si/Nb/Si trilayers formed with 9.5 and 1.3 nm thick niobium layer buried in amorphous silicon were prepared by magnetron sputtering and studied using XPS depth-profile techniques in order to investigate the change of Hall coefficient sign with thickness. The analysis of high-resolution (HR) XPS spectra revealed that the thicker layer sample has sharp top interface and metallic phase of niobium, thus holes dominate the transport. In contrast, the analysis indicates that the thinner layer sample has a Nb-rich mixed alloy formation at the top interface. The authors suggest that the main effect leading to a change of sign of the Hall coefficient for the thinner layer sample (which is negative contrary to the positive sign for the thicker layer sample) may be related to strong boundary scattering enhanced by the presence of silicon ions in the layer close to the interface/s. The depth-profile reconstruction was performed by SESSA software tool confirming that it can be reliably used for quantitative analysis/interpretation of experimental XPS data.

Characteristics of a-IGZO/ITO hybrid layer deposited by magnetron sputtering.

PubMed

Bang, Joon-Ho; Park, Hee-Woo; Cho, Sang-Hyun; Song, Pung-Keun

2012-04-01

Transparent a-IGZO (In-Ga-Zn-O) films have been actively studied for use in the fabrication of high-quality TFTs. In this study, a-IGZO films and a-IGZO/ITO double layers were deposited by DC magnetron sputtering under various oxygen flow rates. The a-IGZO films showed an amorphous structure up to 500 degrees C. The deposition rate of these films decreased with an increase in the amount of oxygen gas. The amount of indium atoms in the film was confirmed to be 11.4% higher than the target. The resistivity of double layer follows the rules for parallel DC circuits The maximum Hall mobility of the a-IGZO/ITO double layers was found to be 37.42 cm2/V x N s. The electrical properties of the double layers were strongly dependent on their thickness ratio. The IGZO/ITO double layer was subjected to compressive stress, while the ITO/IGZO double layer was subjected to tensile stress. The bending tolerance was found to depend on the a-IGZO thickness.

Enzyme-assisted growth of nacreous CaCO3/polymer hybrid nanolaminates via the formation of mineral bridges

NASA Astrophysics Data System (ADS)

Yeom, Bongjun; Char, Kookheon

2016-06-01

Laminated nanostructures in nacre have been adopted as models in the fabrication of strong, tough synthetic nanocomposites. However, the utilization of CaCO3 biominerals in these composites is limited by the complexity of the synthesis method for nanosized biominerals. In this study, we use the enzymatic reaction of urease to generate a nanoscale CaCO3 thin film to prepare CaCO3/polymer hybrid nanolaminates. Additional layers of CaCO3 thin film are consecutively grown over the base CaCO3 layer with the intercalation of organic layers. The morphology and crystallinity of the added CaCO3 layers depend strongly on the thickness of the organic layer coated on the underlying CaCO3 layer. When the organic layer is less than 20 nm thick, the amorphous CaCO3 layer is spontaneously transformed into crystalline calcite layer during the growth process. We also observe crystalline continuity between adjacent CaCO3 layers through interconnecting mineral bridges. The formation of these mineral bridges is crucial to the epitaxial growth of CaCO3 layers, similar to the formation of natural nacre.

Acid attack on hydrated cement — Effect of mineral acids on the degradation process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gutberlet, T.; Hilbig, H.; Beddoe, R.E., E-mail: robin.beddoe@tum.de

During acid attack on concrete structural components, a degraded layer develops whose properties as a protective barrier are decisive for durability. {sup 29}Si NMR spectroscopy and {sup 27}Al NMR spectroscopy were used with XRD to investigate the degraded layer on hardened cement paste exposed to HCl and H{sub 2}SO{sub 4}. The layer comprises an amorphous silica gel with framework silicates, geminate and single silanol groups in which Si is substituted by Al. Amorphous Al(OH){sub 3} and Fe(OH){sub 3} are present. The gel forms by polycondensation and cross-linking of C-A-S-H chains at AlO{sub 4} bridging tetrahedra. In the transition zone betweenmore » the degraded layer and the undamaged material, portlandite dissolves and Ca is removed from the C-A-S-H phases maintaining their polymer structure at first. With HCl, monosulphate in the transition zone is converted into Friedel's salt and ettringite. With H{sub 2}SO{sub 4}, gypsum precipitates near the degradation front reducing the thickness of the transition zone and the rate of degradation.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pantzas, Konstantinos, E-mail: konstantinos.pantzas@lpn.cnrs.fr; Institut P', CNRS-Université de Poitiers - ENSMA - UPR 3346, SP2MI - Téléport 2 Bd Marie Pierre Curie, B.P. 30179, F-86962, Futuroscope Chasseneuil Cedex; Patriarche, Gilles

Direct bonding of yttrium iron garnet (YIG) on silicon without the use of an intermediate bonding layer is demonstrated and characterized using scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy. During the bonding experiment, the garnet is reduced in the presence of oxide-free silicon. As a result, a 5 nm thick SiO{sub 2}/amorphous-YIG bilayer is formed and welds the garnet to silicon.

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

PubMed

Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

2017-12-01

La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La 2 O 3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La 2 O 3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La 2 O 3 . Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La 2 O 3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

Use of inverse quasi-epitaxy to modify order during post-deposition processing of organic photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forrest, Stephen R.; Zimmerman, Jeramy D.; Lassiter, Brian E .

Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasimore » epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.« less

Quaternary Chalcogenide-Based Misfit Nanotubes LnS(Se)-TaS(Se)2 (Ln = La, Ce, Nd, and Ho): Synthesis and Atomic Structural Studies.

PubMed

Lajaunie, Luc; Radovsky, Gal; Tenne, Reshef; Arenal, Raul

2018-01-16

We have synthesized quaternary chalcogenide-based misfit nanotubes LnS(Se)-TaS 2 (Se) (Ln = La, Ce, Nd, and Ho). None of the compounds described here were reported in the literature as a bulk compound. The characterization of these nanotubes, at the atomic level, has been developed via different transmission electron microscopy techniques, including high-resolution scanning transmission electron microscopy, electron diffraction, and electron energy-loss spectroscopy. In particular, quantification at sub-nanometer scale was achieved by acquiring high-quality electron energy-loss spectra at high energy (∼between 1000 and 2500 eV). Remarkably, the sulfur was found to reside primarily in the distorted rocksalt LnS lattice, while the Se is associated with the hexagonal TaSe 2 site. Consequently, these quaternary misfit layered compounds in the form of nanostructures possess a double superstructure of La/Ta and S/Se with the same periodicity. In addition, the interlayer spacing between the layers and the interatomic distances within the layer vary systematically in the nanotubes, showing clear reduction when going from the lightest (La atom) to the heaviest (Ho) atom. Amorphous layers, of different nature, were observed at the surface of the nanotubes. For La-based NTs, the thin external amorphous layer (inferior to 10 nm) can be ascribed to a Se deficiency. Contrarily, for Ho-based NTs, the thick amorphous layer (between 10 and 20 nm) is clearly ascribed to oxidation. All of these findings helped us to understand the atomic structure of these new compounds and nanotubes thereof.

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

NASA Astrophysics Data System (ADS)

Shen, Huaxiang; Zhu, Guo-Zhen; Botton, Gianluigi A.; Kitai, Adrian

2015-03-01

The growth mechanisms of high quality GaN thin films on 6H-SiC by sputtering were investigated by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The XRD θ-2θ scans show that high quality ( 0002 ) oriented GaN was deposited on 6H-SiC by reactive magnetron sputtering. Pole figures obtained by 2D-XRD clarify that GaN thin films are dominated by ( 0002 ) oriented wurtzite GaN and { 111 } oriented zinc-blende GaN. A thin amorphous silicon oxide layer on SiC surfaces observed by STEM plays a critical role in terms of the orientation information transfer from the substrate to the GaN epilayer. The addition of H2 into Ar and/or N2 during sputtering can reduce the thickness of the amorphous layer. Moreover, adding 5% H2 into Ar can facilitate a phase transformation from amorphous to crystalline in the silicon oxide layer and eliminate the unwanted { 3 3 ¯ 02 } orientation in the GaN thin film. Fiber texture GaN thin films can be grown by adding 10% H2 into N2 due to the complex reaction between H2 and N2.

Electric shielding films for biased TEM samples and their application to in situ electron holography.

PubMed

Nomura, Yuki; Yamamoto, Kazuo; Hirayama, Tsukasa; Saitoh, Koh

2018-06-01

We developed a novel sample preparation method for transmission electron microscopy (TEM) to suppress superfluous electric fields leaked from biased TEM samples. In this method, a thin TEM sample is first coated with an insulating amorphous aluminum oxide (AlOx) film with a thickness of about 20 nm. Then, the sample is coated with a conductive amorphous carbon film with a thickness of about 10 nm, and the film is grounded. This technique was applied to a model sample of a metal electrode/Li-ion-conductive-solid-electrolyte/metal electrode for biasing electron holography. We found that AlOx film with a thickness of 10 nm has a large withstand voltage of about 8 V and that double layers of AlOx and carbon act as a 'nano-shield' to suppress 99% of the electric fields outside of the sample. We also found an asymmetry potential distribution between high and low potential electrodes in biased solid-electrolyte, indicating different accumulation behaviors of lithium-ions (Li+) and lithium-ion vacancies (VLi-) in the biased solid-electrolyte.

Sensitive determination of the Young's modulus of thin films by polymeric microcantilevers

NASA Astrophysics Data System (ADS)

Colombi, Paolo; Bergese, Paolo; Bontempi, Elza; Borgese, Laura; Federici, Stefania; Sylvest Keller, Stephan; Boisen, Anja; Eleonora Depero, Laura

2013-12-01

A method for the highly sensitive determination of the Young's modulus of TiO2 thin films exploiting the resonant frequency shift of a SU-8 polymer microcantilever (MC) is presented. Amorphous TiO2 films with different thickness ranging from 10 to 125 nm were grown at low temperature (90 °C) with subnanometer thickness resolution on SU-8 MC arrays by means of atomic layer deposition. The resonant frequencies of the MCs were measured before and after coating and the elastic moduli of the films were determined by a theoretical model developed for this purpose. The Young's modulus of thicker TiO2 films (>75 nm) was estimated to be about 110 GPa, this value being consistent with the value of amorphous TiO2. On the other hand we observed a marked decrease of the Young's modulus for TiO2 films with a thickness below 50 nm. This behavior was found not to be related to a decrease of the film mass density, but to surface effects according to theoretical predictions on size-dependent mechanical properties of nano- and microstructures.

Abrasion and deformed layer formation of manganese-zinc ferrite in sliding contact with lapping tapes

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.; Tanaka, K.

1986-01-01

Wear experiments were conducted using replication electron microscopy and reflection electron diffraction to study abrasion and the deformed layers produced in single-crystal Mn-Zn ferrite simulated heads during contact with lapping tapes. The crystaline state of the head is changed drastically during the abrasion process. Crystalline states ranging from nearly amorphous to highly textured polycrystalline can be produced on the wear surface of a single-crystal Mn-Zn ferrite head. The total thickness of the deformed layer was approximately 0.8 microns. This thickness increased as the load and abrasive grit size increased. The anisotropic wear of the ferrite was found to be inversely proportional to the hardness of the wear surface. The wear was lower in the order 211 111 10 0110. The wear of the ferrite increased markedly with an increase in sliding velocity and abrasive grit size.

Computer simulation of the matrix-inclusion interphase in bulk metallic glass based nanocomposites

NASA Astrophysics Data System (ADS)

Kokotin, V.; Hermann, H.; Eckert, J.

2011-10-01

Atomistic models for matrix-inclusion systems are generated. Analyses of the systems show that interphase layers of finite thickness appear interlinking the surface of the nanocrystalline inclusion and the embedding amorphous matrix. In a first approximation, the interphase is characterized as an amorphous structure with a density slightly reduced compared to that of the matrix. This result holds for both monatomic hard sphere systems and a Cu47.5Zr47.5Al5 alloy simulated by molecular dynamics (MD). The elastic shear and bulk modulus of the interphase are calculated by simulated deformation of the MD systems. Both moduli diminish with decreasing density but the shear modulus is more sensitive against density reduction by one order of magnitude. This result explains recent observations of shear band initiation at the amorphous-crystalline interface during plastic deformation.

Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes/polymer composite thin film.

PubMed

Rajanna, Pramod Mulbagal; Gilshteyn, Evgenia; Yagafarov, Timur; Alekseeva, Alena; Anisimov, Anton; Sergeev, Oleg; Neumueller, Alex; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert

2018-01-09

We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and a thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high quality SWCNTs with an enhanced conductivity by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with different SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit Jsc, open-circuit Voc, and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and efficiency of 3.4% under simulated one-sun AM 1.5G direct illumination. © 2018 IOP Publishing Ltd.

Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes and polymer composite thin film.

PubMed

Rajanna, Pramod M; Gilshteyn, Evgenia P; Yagafarov, Timur; Aleekseeva, Alena K; Anisimov, Anton S; Neumüller, Alex; Sergeev, Oleg; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert G

2018-01-31

We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high-quality SWCNTs with conductivity enhanced by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with varying SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit J sc , open-circuit V oc , and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and an efficiency of 3.4% under simulated one-sun AM 1.5 G direct illumination.

Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes and polymer composite thin film

NASA Astrophysics Data System (ADS)

Rajanna, Pramod M.; Gilshteyn, Evgenia P.; Yagafarov, Timur; Aleekseeva, Alena K.; Anisimov, Anton S.; Neumüller, Alex; Sergeev, Oleg; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert G.

2018-03-01

We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high-quality SWCNTs with conductivity enhanced by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with varying SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit J sc , open-circuit V oc , and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and an efficiency of 3.4% under simulated one-sun AM 1.5 G direct illumination.

Tunable self-organization of nanocomposite multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, C. Q.; Pei, Y. T.; Shaha, K. P.

In this letter we report the controlled growth and microstructural evolution of self-assembled nanocomposite multilayers that are induced by surface ion-impingement. The nanoscale structures together with chemical composition, especially at the growing front, have been investigated with high-resolution transmission electron microscopy. Concurrent ion impingement of growing films produces an amorphous capping layer 3 nm in thickness where spatially modulated phase separation is initiated. It is shown that the modulation of multilayers as controlled by the self-organization of nanocrystallites below the capping layer, can be tuned through the entire film.

High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

NASA Astrophysics Data System (ADS)

Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

2018-03-01

Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varela, Maria; Scigaj, Mateusz; Gazquez, Jaume

Interfaces between (110) and (111)SrTiO 3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO 3 (a-LAO), Y:ZrO 2 (a-YSZ), and SrTiO 3 (a-STO) become conducting above a critical thickness t c. Here we show that t c for a-LAO does not depend on the substrate orientation, i.e. t c (a-LAO/(110)STO) ≈ t c(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: t c(a-LAO/(110)STO) < t c(a-YSZ/(110)STO) < t c(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinity of the deposited metal ions, rather thanmore » orientation-dependent enthalpy vacancy formation and diffusion. Furthermore, scanning transmission microscopy characterization of amorphous and crystalline LAO/STO(110) interfaces shows much higher amount of oxygen vacancies in the former, providing experimental evidence of the distinct mechanism of conduction in these interfaces.« less

Ultra-low thermal conductivity of high-interface density Si/Ge amorphous multilayers

NASA Astrophysics Data System (ADS)

Goto, Masahiro; Xu, Yibin; Zhan, Tianzhuo; Sasaki, Michiko; Nishimura, Chikashi; Kinoshita, Yohei; Ishikiriyama, Mamoru

2018-04-01

Owing to their phonon scattering and interfacial thermal resistance (ITR) characteristics, inorganic multilayers (MLs) have attracted considerable attention for thermal barrier applications. In this study, a-Si/a-Ge MLs with layer thicknesses ranging from 0.3 to 5 nm and different interfacial elemental mixture states were fabricated using a combinatorial sputter-coating system, and their thermal conductivities were measured via a frequency-domain thermo-reflectance method. An ultra-low thermal conductivity of κ = 0.29 ± 0.01 W K-1 m-1 was achieved for a layer thickness of 0.8 nm. The ITR was found to decrease from 8.5 × 10-9 to 3.6 × 10-9 m2 K W-1 when the interfacial density increases from 0.15 to 0.77 nm-1.

Spin transport and spin accumulation signals in Si studied in tunnel junctions with a Fe/Mg ferromagnetic multilayer and an amorphous SiOxNy tunnel barrier

NASA Astrophysics Data System (ADS)

Nakane, Ryosho; Hada, Takato; Sato, Shoichi; Tanaka, Masaaki

2018-04-01

We studied the spin accumulation signals in phosphorus-doped n+-Si (8 × 1019 cm-3) by measuring the spin transport in three-terminal vertical devices with Fe(3 nm)/Mg(0 and 1 nm)/SiOxNy(1 nm)/n+-Si(001) tunnel junctions, where the amorphous SiOxNy layer was formed by oxnitridation of the Si substrate with radio frequency plasma. Obvious spin accumulation signals were observed at 4-300 K in the spin extraction geometry when the thickness of the Mg insertion layer was 1 nm. We found that by inserting a thin (1 nm) Mg layer, intermixing of Fe and SiOxNy is suppressed, leading to the appearance of the spin accumulation signals, and this result is consistent with the dead layer model recently proposed by our group [S. Sato et al., Appl. Phys. Lett. 107, 032407 (2015)]. We obtained relatively high spin polarization (PS) of electrons tunneling through the junction and long spin lifetime (τS): PS = 16% and τS = 5.6 ns at 4 K and PS = 7.5% and τS = 2.7 ns at 300 K. Tunnel junctions with an amorphous SiOxNy tunnel barrier are very promising for Si-based spintronic devices, since they can be formed by the method compatible with the silicon complementary metal-oxide-semiconductor technology.

Structural defects in bulk GaN

NASA Astrophysics Data System (ADS)

Liliental-Weber, Z.; dos Reis, R.; Mancuso, M.; Song, C. Y.; Grzegory, I.; Porowski, S.; Bockowski, M.

2014-10-01

Transmission Electron Microscopy (TEM) studies of undoped and Mg doped GaN layers grown on the HVPE substrates by High Nitrogen Pressure Solution (HNPS) with the multi-feed-seed (MFS) configuration are shown. The propagation of dislocations from the HVPE substrate to the layer is observed. Due to the interaction between these dislocations in the thick layers much lower density of these defects is observed in the upper part of the HNPS layers. Amorphous Ga precipitates with attached voids pointing toward the growth direction are observed in the undoped layer. This is similar to the presence of Ga precipitates in high-pressure platelets, however the shape of these precipitates is different. The Mg doped layers do not show Ga precipitates, but MgO rectangular precipitates are formed, decorating the dislocations. Results of TEM studies of HVPE layers grown on Ammonothermal substrates are also presented. These layers have superior crystal quality in comparison to the HNPS layers, as far as density of dislocation is concern. Occasionally some small inclusions can be found, but their chemical composition was not yet determined. It is expected that growth of the HNPS layers on these substrate will lead to large layer thickness obtained in a short time and with high crystal perfection needed in devices.

FTIR study of silicon carbide amorphization by heavy ion irradiations

NASA Astrophysics Data System (ADS)

Costantini, Jean-Marc; Miro, Sandrine; Pluchery, Olivier

2017-03-01

We have measured at room temperature (RT) the Fourier-transform infra-red (FTIR) absorption spectra of ion-irradiated thin epitaxial films of cubic silicon carbide (3C-SiC) with 1.1 µm thickness on a 500 µm thick (1 0 0) silicon wafer substrate. Irradiations were carried out at RT with 2.3 MeV 28Si+ ions and 3.0 MeV 84Kr+ ions for various fluences in order to induce amorphization of the SiC film. Ion projected ranges were adjusted to be slightly larger than the film thickness so that the whole SiC layers were homogeneously damaged. FTIR spectra of virgin and irradiated samples were recorded for various incidence angles from normal incidence to Brewster’s angle. We show that the amorphization process in ion-irradiated 3C-SiC films can be monitored non-destructively by FTIR absorption spectroscopy without any major interference of the substrate. The compared evolutions of TO and LO peaks upon ion irradiation yield valuable information on the damage process. Complementary test experiments were also performed on virgin silicon nitride (Si3N4) self-standing films for similar conditions. Asymmetrical shapes were found for TO peaks of SiC, whereas Gaussian profiles are found for LO peaks. Skewed Gaussian profiles, with a standard deviation depending on wave number, were used to fit asymmetrical peaks for both materials. A new methodology for following the amorphization process is proposed on the basis of the evolution of fitted IR absorption peak parameters with ion fluence. Results are discussed with respect to Rutherford backscattering spectrometry channeling and Raman spectroscopy analysis.

Preparation of anatase TiO2 thin film by low temperature annealing as an electron transport layer in inverted polymer solar cells

NASA Astrophysics Data System (ADS)

Noh, Hongche; Oh, Seong-Geun; Im, Seung Soon

2015-04-01

To prepare the anatase TiO2 thin films on ITO glass, amorphous TiO2 colloidal solution was synthesized through the simple sol-gel method by using titanium (IV) isopropoxide as a precursor. This amorphous TiO2 colloidal solution was spread on ITO glass by spin-coating, then treated at 450 °C to obtain anatase TiO2 film (for device A). For other TiO2 films, amorphous TiO2 colloidal solution was treated through solvothermal process at 180 °C to obtain anatase TiO2 colloidal solution. This anatase TiO2 colloidal solution was spread on ITO glass by spin coating, and then annealed at 200 °C (for device B) and 130 °C (for device C), respectively. The average particle size of amorphous TiO2 colloidal solution was about 1.0 nm and that of anatase TiO2 colloidal solution was 10 nm. The thickness of TiO2 films was about 15 nm for all cases. When inverted polymer solar cells were fabricated by using these TiO2 films as an electron transport layer, the device C showed the highest PCE (2.6%) due to the lack of defect, uniformness and high light absorbance of TiO2 films. The result of this study can be applied for the preparation of inverted polymer solar cell using TiO2 films as a buffer layer at low temperature on plastic substrate by roll-to roll process.

Theory of the spatial resolution of (scanning) transmission electron microscopy in liquid water or ice layers.

PubMed

de Jonge, Niels

2018-04-01

The sample dependent spatial resolution was calculated for transmission electron microscopy (TEM) and scanning TEM (STEM) of objects (e.g., nanoparticles, proteins) embedded in a layer of liquid water or amorphous ice. The theoretical model includes elastic- and inelastic scattering, beam broadening, and chromatic aberration. Different contrast mechanisms were evaluated as function of the electron dose, the detection angle, and the sample configuration. It was found that the spatial resolution scales with the electron dose to the -1/4th power. Gold- and carbon nanoparticles were examined in the middle of water layers ranging from 0.01--10 µm thickness representing relevant classes of experiments in both materials science and biology. The optimal microscope settings differ between experimental configurations. STEM performs the best for gold nanoparticles for all layer thicknesses, while carbon is best imaged with phase-contrast TEM for thin layers but bright field STEM is preferred for thicker layers. The resolution was also calculated for a water layer enclosed between thin membranes. The influence of chromatic aberration correction for TEM was examined as well. The theory is broadly applicable to other types of materials and sample configurations. Copyright © 2018 Elsevier B.V. All rights reserved.

Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

PubMed Central

Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

2016-01-01

Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

Evolution of the secondary electron emission during the graphitization of thin C films

NASA Astrophysics Data System (ADS)

Larciprete, Rosanna; Grosso, Davide Remo; Di Trolio, Antonio; Cimino, Roberto

2015-02-01

The relation between the atomic hybridization and the secondary electron emission yield (SEY) in carbon materials has been investigated during the thermal graphitization of thin amorphous carbon layers deposited by magnetron sputtering on Cu substrates. C1s core level, valence band and Raman spectroscopy were used to follow the sp3→sp2 structural reorganization while the SEY curves as a function of the kinetic energy of the incident electron beam were measured in parallel. We found that an amorphous C layer with a thickness of a few tens of nanometers is capable to modify the secondary emission properties of the clean copper surface, reducing the maximum yield from 1.4 to 1.2. A further SEY decrease observed with the progressive conversion of sp3 hybrids into six-fold aromatic domains was related to the electronic structure close to the Fermi level of the C-films. We found that a moderate structural quality of the C layer is sufficient to notably decrease the SEY as aromatic clusters of limited size approach the secondary emission properties of graphite.

Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fallqvist, A.; Fager, H.; Hultman, L.

ZrN/SiN{sub x} nanoscale multilayers were deposited on ZrN seed layers grown on top of MgO(001) substrates by dc magnetron sputtering with a constant ZrN thickness of 40 Å and with an intended SiN{sub x} thickness of 2, 4, 6, 8, and 15 Å at a substrate temperature of 800 °C and 6 Å at 500 °C. The films were investigated by X-ray diffraction, high-resolution scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy. The investigations show that the SiN{sub x} is amorphous and that the ZrN layers are crystalline. Growth of epitaxial cubic SiN{sub x}—known to take place on TiN(001)—onmore » ZrN(001) is excluded to the monolayer resolution of this study. During the course of SiN{sub x} deposition, the material segregates to form surface precipitates in discontinuous layers for SiN{sub x} thicknesses ≤6 Å that coalesce into continuous layers for 8 and 15 Å thickness at 800 °C, and for 6 Å at 500 °C. The SiN{sub x} precipitates are aligned vertically. The ZrN layers in turn grow by epitaxial lateral overgrowth on the discontinuous SiN{sub x} in samples deposited at 800 °C with up to 6 Å thick SiN{sub x} layers. Effectively a self-organized nanostructure can be grown consisting of strings of 1–3 nm large SiN{sub x} precipitates along apparent column boundaries in the epitaxial ZrN.« less

Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazlov, N., E-mail: n.bazlov@spbu.ru; Pilipenko, N., E-mail: nelly.pilipenko@gmail.com; Vyvenko, O.

2016-06-17

AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained trapsmore » of positive charges with concentration of about 4 × 10{sup 18} cm{sup −3}. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 10{sup 12} cm{sup −2}. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 10{sup 10} cm{sup −2} were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.« less

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory.

PubMed

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In 2 Ga 2 ZnO 7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO 2 (blocking oxide)/p ++ -Si (control gate) substrate, where 3 nm thick atomic layer deposited Al 2 O 3 (tunneling oxide) and 5 nm thick low-pressure CVD Si 3 N 4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F ) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory

NASA Astrophysics Data System (ADS)

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In2Ga2ZnO7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO2 (blocking oxide)/p++-Si (control gate) substrate, where 3 nm thick atomic layer deposited Al2O3 (tunneling oxide) and 5 nm thick low-pressure CVD Si3N4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

Versatile technique for assessing thickness of 2D layered materials by XPS

NASA Astrophysics Data System (ADS)

Zemlyanov, Dmitry Y.; Jespersen, Michael; Zakharov, Dmitry N.; Hu, Jianjun; Paul, Rajib; Kumar, Anurag; Pacley, Shanee; Glavin, Nicholas; Saenz, David; Smith, Kyle C.; Fisher, Timothy S.; Voevodin, Andrey A.

2018-03-01

X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) and the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Therefore, after XPS analysis, exactly the same sample can undergo further processing or utilization.

Versatile technique for assessing thickness of 2D layered materials by XPS

DOE PAGES

Zemlyanov, Dmitry Y.; Jespersen, Michael; Zakharov, Dmitry N.; ...

2018-02-07

X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS 2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) andmore » the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Furthermore, after XPS analysis, exactly the same sample can undergo further processing or utilization.« less

Versatile technique for assessing thickness of 2D layered materials by XPS.

PubMed

Zemlyanov, Dmitry Y; Jespersen, Michael; Zakharov, Dmitry N; Hu, Jianjun; Paul, Rajib; Kumar, Anurag; Pacley, Shanee; Glavin, Nicholas; Saenz, David; Smith, Kyle C; Fisher, Timothy S; Voevodin, Andrey A

2018-03-16

X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS 2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) and the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Therefore, after XPS analysis, exactly the same sample can undergo further processing or utilization.

Versatile technique for assessing thickness of 2D layered materials by XPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zemlyanov, Dmitry Y.; Jespersen, Michael; Zakharov, Dmitry N.

X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS 2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) andmore » the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Furthermore, after XPS analysis, exactly the same sample can undergo further processing or utilization.« less

Adsorption, Desorption, and Diffusion of Nitrogen in a Model Nanoporous Material: II. Diffusion Limited Kinetics in Amorphous Solid Water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zubkov, Tykhon; Smith, R. Scott; Engstrom, Todd R.

2007-11-14

Tykhon Zubkov, R. Scott Smith, Todd R. Engstrom, and Bruce D. Kay The adsorption, desorption, and diffusion kinetics of N2 on thick (up to ~9 mm) porous films of amorphous solid water (ASW) films were studied using molecular beam techniques and temperature programmed desorption (TPD). Porous ASW films were grown on Pt(111) at low temperature (<30 K) from a collimated H2O beam at glancing incident angles. In thin films (<1 mm), the desorption kinetics are well described by a model that assumes rapid and uniform N2 distribution throughout the film. In thicker films, (>1 mm), N2 adsorption at 27 Kmore » results in a non-uniform distribution where most of N2 is trapped in the outer region of the film. Redistribution of N2 can be induced by thermal annealing. The apparent activation energy for this process is ~7 kJ/mol, which is approximately half of the desorption activation energy at the corresponding coverage. Blocking adsorption sites near the film surface facilitates transport into the film. Despite the onset of limited diffusion, the adsorption kinetics are efficient, precursor-mediated and independent of film thickness. An adsorption mechanism is proposed, in which a high-coverage N2 front propagates into a pore by the rapid transport of physisorbed 2nd layer N2 species on top of the 1st layer chemisorbed layer.« less

Features of surface phase formation during case-hardening of iron- and titanium-based alloys

NASA Astrophysics Data System (ADS)

Vintaikin, B. E.; Kamynin, A. V.; Kraposhin, V. S.; Smirnov, A. E.; Terezanova, K. V.; Cherenkova, S. A.; Sheykina, V. I.

2017-11-01

The article provides a detailed analysis of formation features for surface phases in technical iron and Cr20-Ni80 alloy samples that undergo case-hardening at a temperature of 850°C for 2, 4 and 6 hours of saturation in two different environments: acetylene, and molten salt consisting of sodium tetraborate and amorphous boron. We carried out an X-ray phase analysis to determine the phase structure of surface material layers that formed as a result of the case-hardening process. We discovered that after carburising it was possible to detect Fe3C and Fe-α phases on the surface of technical iron samples, and after boriding we found FeB, Fe2B and Fe3B phases; we noted a lack of characteristic Fe-α and Fe-γ peaks on the X-ray diffraction pattern. We detected many different phases in the Cr20-Ni80 alloy after the same type of case-hardening. Titanium oxides appeared after case-hardening of titanium in air at 800°C. We provide data on surface structure of samples subjected to vacuum carburising: over a 2 to 6 hour interval, the layer thickness is a parabolic function of time. When carrying out electrolysis-free liquid boriding, increasing exposure time from 2 to 6 hours alters the thickness of the strengthened layer only slightly, so, when carrying out case-hardening, it is less efficient to increase saturation time in molten salt containing sodium tetraborate and amorphous boron.

Composition dependence of solid-phase epitaxy in silicon-germanium alloys: Experiment and theory

NASA Astrophysics Data System (ADS)

Haynes, T. E.; Antonell, M. J.; Lee, C. Archie; Jones, K. S.

1995-03-01

The rates of solid-phase epitaxy (SPE) in unstrained Si1-xGex alloys have been measured by time-resolved reflectivity for eight different alloy compositions, including both Si-rich and Ge-rich layers. Amorphous layers 300-400 nm thick were first formed in 8-μm-thick, relaxed, epitaxial Si1-xGex layers (0.02<=x<=0.87) by ion implantation of Si+. For each composition, the measured SPE rates spanned approximately two orders of magnitude. The alloy SPE rates are shown to be related to the regrowth rates of the two pure elements by a simple equation expressed in terms of the composition parameter x and having no adjustable parameters. The form of this equation implies that crystallization occurs by a serial attachment process at the amorphous-crystal interface and that the rate of attachment of each individual atom is determined by the identities of its four nearest neighbors. Such a process is consistent with the dangling-bond model proposed by Spaepen and Turnbull [in Laser-Solid Interactions and Laser Processing, edited by S. D. Ferris, H. J. Leamy, and J. M. Poate, AIP Conf. Proc. No. 50 (AIP, New York, 1979)] if the SPE rate is limited by the migration rate of dangling bonds rather than by their formation rate. Based on this analysis, an interpretation is proposed for the anomalously large activation energies that have been measured for SPE in some Si-rich compositions.

Coercivity enhancement of Dy-coated Nd-Fe-B flakes by crystallization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fukunaga, H.; Sugimoto, Y.; Nakano, M.

2011-04-01

The coercivity of isotropic Dy-coated Nd-Fe-B flakes was enhanced by crystallization and simultaneous diffusion of Dy from their surfaces. Amorphous Dy-coated Nd-Fe-B flakes were crystallized by heating them to 923 K 2over a 2 min period followed by rapid cooling. During crystallization, the Dy on the surface diffused into the flakes. This low-temperature rapid annealing produced flakes with fine grains and the Dy diffusion enhanced their coercivity. The coercivity after crystallization increased with increasing Dy layer thickness, although the remanence decreased when the layer thickness exceeded 3 {mu}m. Thick coatings of over 6 {mu}m resulted in the formation of DyFe{submore » 2}, which degraded the magnetic properties of the crystallized flakes. Flakes with a 3-{mu}m-thick coating exhibited excellent magnetic properties after annealing: They had a coercivity of 1880 kA/m and a remanence of 78 emu/g. This coercivity is approximately 500 kA/m higher than that of uncoated flakes, whereas the remanence is comparable to that of uncoated flakes.« less

High efficiency photovoltaic device

DOEpatents

Guha, Subhendu; Yang, Chi C.; Xu, Xi Xiang

1999-11-02

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

NASA Astrophysics Data System (ADS)

Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

2017-11-01

In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium-nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (~2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs.

Ultra-Thin Monocrystalline Silicon Solar Cell with 12.2% Efficiency Using Silicon-On-Insulator Substrate.

PubMed

Bian, Jian-Tao; Yu, Jian; Duan, Wei-Yuan; Qiu, Yu

2015-04-01

Single side heterojunction silicon solar cells were designed and fabricated using Silicon-On-Insulator (SOI) substrate. The TCAD software was used to simulate the effect of silicon layer thickness, doping concentration and the series resistance. A 10.5 µm thick monocrystalline silicon layer was epitaxially grown on the SOI with boron doping concentration of 2 x 10(16) cm(-3) by thermal CVD. Very high Voc of 678 mV was achieved by applying amorphous silicon heterojunction emitter on the front surface. The single cell efficiency of 12.2% was achieved without any light trapping structures. The rear surface recombination and the series resistance are the main limiting factors for the cell efficiency in addition to the c-Si thickness. By integrating an efficient light trapping scheme and further optimizing fabrication process, higher efficiency of 14.0% is expected for this type of cells. It can be applied to integrated circuits on a monolithic chip to meet the requirements of energy autonomous systems.

Amorphous surface layer versus transient amorphous precursor phase in bone - A case study investigated by solid-state NMR spectroscopy.

PubMed

Von Euw, Stanislas; Ajili, Widad; Chan-Chang, Tsou-Hsi-Camille; Delices, Annette; Laurent, Guillaume; Babonneau, Florence; Nassif, Nadine; Azaïs, Thierry

2017-09-01

The presence of an amorphous surface layer that coats a crystalline core has been proposed for many biominerals, including bone mineral. In parallel, transient amorphous precursor phases have been proposed in various biomineralization processes, including bone biomineralization. Here we propose a methodology to investigate the origin of these amorphous environments taking the bone tissue as a key example. This study relies on the investigation of a bone tissue sample and its comparison with synthetic calcium phosphate samples, including a stoichiometric apatite, an amorphous calcium phosphate sample, and two different biomimetic apatites. To reveal if the amorphous environments in bone originate from an amorphous surface layer or a transient amorphous precursor phase, a combined solid-state nuclear magnetic resonance (NMR) experiment has been used. The latter consists of a double cross polarization 1 H→ 31 P→ 1 H pulse sequence followed by a 1 H magnetization exchange pulse sequence. The presence of an amorphous surface layer has been investigated through the study of the biomimetic apatites; while the presence of a transient amorphous precursor phase in the form of amorphous calcium phosphate particles has been mimicked with the help of a physical mixture of stoichiometric apatite and amorphous calcium phosphate. The NMR results show that the amorphous and the crystalline environments detected in our bone tissue sample belong to the same particle. The presence of an amorphous surface layer that coats the apatitic core of bone apatite particles has been unambiguously confirmed, and it is certain that this amorphous surface layer has strong implication on bone tissue biogenesis and regeneration. Questions still persist on the structural organization of bone and biomimetic apatites. The existing model proposes a core/shell structure, with an amorphous surface layer coating a crystalline bulk. The accuracy of this model is still debated because amorphous calcium phosphate (ACP) environments could also arise from a transient amorphous precursor phase of apatite. Here, we provide an NMR spectroscopy methodology to reveal the origin of these ACP environments in bone mineral or in biomimetic apatite. The 1 H magnetization exchange between protons arising from amorphous and crystalline domains shows unambiguously that an ACP layer coats the apatitic crystalline core of bone et biomimetic apatite platelets. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Reduced contact resistance of a-IGZO thin film transistors with inkjet-printed silver electrodes

NASA Astrophysics Data System (ADS)

Chen, Jianqiu; Ning, Honglong; Fang, Zhiqiang; Tao, Ruiqiang; Yang, Caigui; Zhou, Yicong; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao

2018-04-01

In this study, high performance amorphous In–Ga–Zn–O (a-IGZO) TFTs were successfully fabricated with inkjet-printed silver source-drain electrodes. The results showed that increased channel thickness has an improving trend in the properties of TFTs due to the decreased contact resistance. Compared with sputtered silver TFTs, devices with printed silver electrodes were more sensitive to the thickness of active layer. Furthermore, the devices with optimized active layer showed high performances with a maximum saturation mobility of 8.73 cm2 · V‑1 · S‑1 and an average saturation mobility of 6.97 cm2 · V‑1 · S‑1, I on/I off ratio more than 107 and subthreshold swing of 0.28 V/decade, which were comparable with the analogous devices with sputtered electrodes.

Polishability of thin electrolytic and electroless NiP layers

NASA Astrophysics Data System (ADS)

Kinast, Jan; Beier, Matthias; Gebhardt, Andreas; Risse, Stefan; Tünnermann, Andreas

2015-10-01

Ultra-precise metal optics are key components of sophisticated scientific instrumentation in astronomy and space applications, covering a wide spectral range. Especially for applications in the visible or ultra-violet spectral ranges, a low roughness of the optics is required. Therefore, a polishable surface is necessary. State of the art is an amorphous nickel-phosphorus (NiP) layer, which enables several polishing techniques achieving a roughness of <1 nm RMS. Typically, these layers are approximately 30 μm to 60 μm thick. Deposited on Al6061, the bimetallic effect leads to a restricted operational temperature, caused by different coefficients of thermal expansion of Al6061 and NiP. Thinner NiP layers reduce the bimetallic effect. Hence, the possible operating temperature range. A deterministic shape correction via Magnetorheological Finishing of the substrate Al6061 leads to low shape deviations prior to the NiP deposition. This allows for depositing thin NiP-layers, which are polishable via a chemical mechanical polishing technique aiming at ultra-precise metal optics. The present article shows deposition processes and polishability of electroless and electrolytic NiP layers with thicknesses between 1 μm and 10 μm.

Uniform, dense arrays of vertically aligned, large-diameter single-walled carbon nanotubes.

PubMed

Han, Zhao Jun; Ostrikov, Kostya

2012-04-04

Precisely controlled reactive chemical vapor synthesis of highly uniform, dense arrays of vertically aligned single-walled carbon nanotubes (SWCNTs) using tailored trilayered Fe/Al(2)O(3)/SiO(2) catalyst is demonstrated. More than 90% population of thick nanotubes (>3 nm in diameter) can be produced by tailoring the thickness and microstructure of the secondary catalyst supporting SiO(2) layer, which is commonly overlooked. The proposed model based on the atomic force microanalysis suggests that this tailoring leads to uniform and dense arrays of relatively large Fe catalyst nanoparticles on which the thick SWCNTs nucleate, while small nanotubes and amorphous carbon are effectively etched away. Our results resolve a persistent issue of selective (while avoiding multiwalled nanotubes and other carbon nanostructures) synthesis of thick vertically aligned SWCNTs whose easily switchable thickness-dependent electronic properties enable advanced applications in nanoelectronic, energy, drug delivery, and membrane technologies.

Direct Observation of the Thickness-Induced Crystallization and Stress Build-Up during Sputter-Deposition of Nanoscale Silicide Films.

PubMed

Krause, Bärbel; Abadias, Gregory; Michel, Anny; Wochner, Peter; Ibrahimkutty, Shyjumon; Baumbach, Tilo

2016-12-21

The kinetics of phase transitions during formation of small-scale systems are essential for many applications. However, their experimental observation remains challenging, making it difficult to elucidate the underlying fundamental mechanisms. Here, we combine in situ and real-time synchrotron X-ray diffraction (XRD) and X-ray reflectivity (XRR) experiments with substrate curvature measurements during deposition of nanoscale Mo and Mo 1-x Si x films on amorphous Si (a-Si). The simultaneous measurements provide direct evidence of a spontaneous, thickness-dependent amorphous-to-crystalline (a-c) phase transition, associated with tensile stress build-up and surface roughening. This phase transformation is thermodynamically driven, the metastable amorphous layer being initially stabilized by the contributions of surface and interface energies. A quantitative analysis of the XRD data, complemented by simulations of the transformation kinetics, unveils an interface-controlled crystallization process. This a-c phase transition is also dominating the stress evolution. While stress build-up can significantly limit the performance of devices based on nanostructures and thin films, it can also trigger the formation of these structures. The simultaneous in situ access to the stress signal itself, and to its microstructural origins during structure formation, opens new design routes for tailoring nanoscale devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuan, Chunqing; Smith, R. Scott; Kay, Bruce D.

The crystallization kinetics of nanoscale amorphous solid water (ASW) films are investigated using temperature-programmed desorption (TPD) and reflection absorption infrared spectroscopy (RAIRS). TPD measurements are used to probe surface crystallization and RAIRS measurements are used to probe bulk crystallization. Isothermal TPD results show that surface crystallization is independent of the film thickness (from 100 to 1000 ML). Conversely, the RAIRS measurements show that the bulk crystallization time increases linearly with increasing film thickness. These results suggest that nucleation and crystallization begin at the ASW/vacuum interface and then the crystallization growth front propagates linearly into the bulk. This mechanism was confirmedmore » by selective placement of an isotopic layer (5% D2O in H2O) at various positions in an ASW (H2O) film. In this case, the closer the isotopic layer was to the vacuum interface, the earlier the isotopic layer crystallized. These experiments provide direct evidence to confirm that ASW crystallization in vacuum proceeds by a “top-down” crystallization mechanism.« less

Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Mota-Santiago, P.; Vazquez, H.; Bierschenk, T.; Kremer, F.; Nadzri, A.; Schauries, D.; Djurabekova, F.; Nordlund, K.; Trautmann, C.; Mudie, S.; Ridgway, M. C.; Kluth, P.

2018-04-01

The cylindrical nanoscale density variations resulting from the interaction of 185 MeV and 2.2 GeV Au ions with 1.0 μm thick amorphous SiN x :H and SiO x :H layers are determined using small angle x-ray scattering measurements. The resulting density profiles resembles an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions, consistent with molecular-dynamics simulations. For amorphous SiN x :H, the density variations show a radius of 4.2 nm with a relative density change three times larger than the value determined for amorphous SiO x :H, with a radius of 5.5 nm. Complementary infrared spectroscopy measurements exhibit a damage cross-section comparable to the core dimensions. The morphology of the density variations results from freezing in the local viscous flow arising from the non-uniform temperature profile in the radial direction of the ion path. The concomitant drop in viscosity mediated by the thermal conductivity appears to be the main driving force rather than the presence of a density anomaly.

Mimicking the Humidity Response of the Plant Cell Wall by Using Two-Dimensional Systems: The Critical Role of Amorphous and Crystalline Polysaccharides.

PubMed

Niinivaara, Elina; Faustini, Marco; Tammelin, Tekla; Kontturi, Eero

2016-03-01

Of the composite materials occurring in nature, the plant cell wall is among the most intricate, consisting of a complex arrangement of semicrystalline cellulose microfibrils in a dissipative matrix of lignin and hemicelluloses. Here, a biomimetic, two-dimensional cellulose system of the cell wall structure is introduced where cellulose nanocrystals compose the crystalline portion and regenerated amorphous cellulose composes the dissipative matrix. Spectroscopic ellipsometry and QCM-D are used to study the water vapor uptake of several two-layer systems. Quantitative analysis shows that the vapor-induced swelling of these ultrathin films can be controlled by varying ratios of the chemically identical ordered and unordered cellulose components. Intriguingly, increasing the share of crystalline cellulose appeared to increase the vapor uptake but only in cases for which the interfacial area between the crystalline and amorphous area was relatively large and the thickness of an amorphous overlayer was relatively small. The results show that a biomimetic approach may occasionally provide answers as to why certain native structures exist.

Effects of vial packing density on drying rate during freeze-drying of carbohydrates or a model protein measured using a vial-weighing technique.

PubMed

Gieseler, Henning; Lee, Geoffrey

2008-02-01

To determine the effects of vial packing density in a laboratory freeze dryer on drying rate profiles of crystalline and amorphous formulations. The Christ freeze-drying balance measured cumulative water loss, m(t), and instantaneous drying rate, m(t), of water, mannitol, sucrose and sucrose/BSA formulations in commercial vials. Crystalline mannitol shows drying rate behaviour indicative of a largely homogeneous dried-product layer. The drying rate behaviour of amorphous sucrose indicates structural heterogeneity, postulated to come from shrinkage or microcollapse. Trehalose dries more slowly than sucrose. Addition of BSA to either disaccharide decreases primary drying time. Higher vial packing density greatly reduces drying rate because of effects of radiation heat transfer from chamber walls to test vial. Plots of m(t) versus radical t and m(t) versus layer thickness (either ice or dried-product) allow interpretation of changes in internal cake morphology during drying. Vial packing density greatly influences these profiles.

Mn-doped Ge self-assembled quantum dots via dewetting of thin films

NASA Astrophysics Data System (ADS)

Aouassa, Mansour; Jadli, Imen; Bandyopadhyay, Anup; Kim, Sung Kyu; Karaman, Ibrahim; Lee, Jeong Yong

2017-03-01

In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-assembled quantum dots on SiO2 thin layer for MOS structure. These magnetic quantum dots are elaborated using dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO2 thin film. The size of quantum dots is controlled with nanometer scale precision by varying the nominal thickness of amorphous film initially deposed. The magnetic properties of the quantum-dots layer have been investigated by superconducting quantum interference device (SQUID) magnetometry. Atomic force microscopy (AFM), x-ray energy dispersive spectroscopy (XEDS) and transmission electron microscopy (TEM) were used to examine the nanostructure of these materials. Obtained results indicate that GeMn QDs are crystalline, monodisperse and exhibit a ferromagnetic behavior with a Curie temperature (TC) above room temperature. They could be integrated into spintronic technology.

Long-range magnetic interactions and proximity effects in an amorphous exchange-spring magnet

DOE PAGES

Magnus, F.; Brooks-Bartlett, M. E.; Moubah, R.; ...

2016-06-13

Low-dimensional magnetic heterostructures are a key element of spintronics, where magnetic interactions between different materials often define the functionality of devices. Although some interlayer exchange coupling mechanisms are by now well established, the possibility of direct exchange coupling via proximity-induced magnetization through non-magnetic layers is typically ignored due to the presumed short range of such proximity effects. Here we show that magnetic order can be induced throughout a 40-nm-thick amorphous paramagnetic layer through proximity to ferromagnets, mediating both exchange-spring magnet behaviour and exchange bias. Furthermore, Monte Carlo simulations show that nearest-neighbour magnetic interactions fall short in describing the observed effectsmore » and long-range magnetic interactions are needed to capture the extent of the induced magnetization. Lastly, the results highlight the importance of considering the range of interactions in low-dimensional heterostructures and how magnetic proximity effects can be used to obtain new functionality.« less

Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.

PubMed

Johlin, Eric; Al-Obeidi, Ahmed; Nogay, Gizem; Stuckelberger, Michael; Buonassisi, Tonio; Grossman, Jeffrey C

2016-06-22

While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.

High quality lamella preparation of gallium nitride compound semiconductor using Triple Beam™ system

NASA Astrophysics Data System (ADS)

Sato, T.; Nakano, K.; Matsumoto, H.; Torikawa, S.; Nakatani, I.; Kiyohara, M.; Isshiki, T.

2017-09-01

Gallium nitride (GaN) compound semiconductors have been known to be very sensitive to Ga focused ion beam (FIB) processing. Due to the nature of GaN based materials it is often difficult to produce damage-free lamellae, therefore applying the Triple Beam™ system which incorporates an enhanced method for amorphous removal is presented to make a high quality lamella. The damage or distortion layer thickness of GaN single crystal prepared with 30 kV Ga FIB and 1 kV Ga FIB were about 17 nm and 1.5 nm respectively. The crystallinity at the uppermost surface remained unaffected when the condition of 1 kV Ar ion milling with the Triple Beam™ system was used. The technique of combining traditional Ga FIB processing with an enhanced method for amorphous layer removal by low energy Ar ion milling allows us to analyse the InGaN/GaN interface using aberration corrected scanning transmission electron microscopy at atomic resolution levels.

Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

DOEpatents

Carlson, David E.

1982-01-01

An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Li; Thompson, Gregory, E-mail: gthompson@eng.ua.edu

A series of 40–2 nm bilayer spacing Ti/Fe multilayers were sputter-deposited. As the length scale of individual Ti layers equaled to 2 nm, Ti phase transforms from a hexagonal close packed (hcp)-to-body centered cubic (bcc) crystal structures for equal layer thicknesses in Ti/Fe multilayers. Further equal reductions in bilayer spacing to less than 1 nm resulted in an additional transformation from a crystalline to amorphous structure. Atom probe tomography reveals significant intermixing between layers which contributes to the observed phase transformations. Real-time, intrinsic growth stress measurements were also performed to relate the adatom mobility to these phase transformations. For the hcp Ti/bcc Femore » multilayers of equivalent volume fractions, the multilayers undergo an overall tensile stress state to a compressive stress state with decreasing bilayer thickness for the multilayers. When the above phase transformations occurred, a modest reduction in the overall compressive stress of the multilayer was noted. Depending on the Fe thickness, the Ti growth was observed to be a tensile to compressive growth change to a purely compressive growth for thinner bilayer spacing. Fe retained a tensile growth stress regardless of the bilayer spacing studied.« less

Understanding the Structure of Amorphous Thin Film Hafnia - Final Paper

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, Andre

2015-08-27

Hafnium Oxide (HfO 2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO 2 thin films which hasn’t been done with the technique of this study. In this study, two HfO 2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer.more » Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO 2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO 2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO 2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.« less

Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

DOEpatents

Madan, A.

1984-12-10

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

The Au/Si eutectic bonding compatibility with KOH etching for 3D devices fabrication

NASA Astrophysics Data System (ADS)

Liang, Hengmao; Liu, Mifeng; Liu, Song; Xu, Dehui; Xiong, Bin

2018-01-01

KOH etching and Au/Si eutectic bonding are cost-efficient technologies for 3D device fabrication. Aimed at investigating the process compatibility of KOH etching and Au/Si bonding, KOH etching tests have been carried out for Au/bulk Si and Au/amorphous Si (a-Si) bonding wafers in this paper. For the Au/bulk Si bonding wafer, a serious underetch phenomenon occurring on the damage layer in KOH etching definitely results in packaging failure. In the microstructure analysis, it is found that the formation of the damage layer between the bonded layer and bulk Si is attributed to the destruction of crystal Si lattices in Au/bulk Si eutectic reaction. Considering the occurrence of underetch for Au/Si bonding must meet two requirements: the superfluous Si and the defective layer near the bonded layer, the Au/a-Si bonding by regulating the a-Si/Au thickness ratio is presented in this study. Only when the a-Si/Au thickness ratio is relatively low are there not underetch phenomena, of which the reason is the full reaction of the a-Si layer avoiding the formation of the damage layer for easy underetch. Obviously, the Au/a-Si bonding via choosing a moderate a-Si/Au thickness ratio (⩽1.5:1 is suggested) could be reliably compatible with KOH etching, which provides an available and low-cost approach for 3D device fabrication. More importantly, the theory of the damage layer proposed in this study can be naturally applied to relevant analyses on the eutectic reaction of other metals and single crystal materials.

Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

NASA Astrophysics Data System (ADS)

Xu, Runshen

Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors, ultra-thin layer of encapsulating ZnS is coated on the surface of GaSb and GaSb/InAs substrates. The 2 nm-thick ZnS film is found to provide a long-term protection against reoxidation for one order and a half longer times than prior reported passivation likely due to its amorphous structure without pinholes. Finally, a combination of binary ALD processes is developed and demonstrated for the growth of yttria-stabilized zirconia films using alkylamido-cyclopentadiengyls zirconium and tris(isopropyl-cyclopentadienyl)yttrium, as zirconium and yttrium precursors, respectively, with ozone being the oxidant. The desired cubic structure of YSZ films is apparently achieved after post-deposition annealing. Further, platinum is atomic layer deposited as electrode on YSZ (8 mol% of Yttria) within the same system. In order to control the morphology of as-deposited Pt thin structure, the nucleation behavior of Pt on amorphous and cubic YSZ is investigated. Three different morphologies of Pt are observed, including nanoparticle, porous and dense films, which are found to depend on the ALD cycle number and the structure and morphology of they underlying ALD YSZ films.

Microstructural characterization of Ti-6Al-4V metal chips by focused ion beam (FIB) and transmission electron microscopy (TEM)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schneider, Judy; Dong, Lei; Howe, Jane Y

2011-01-01

The microstructure of the secondary deformation zone (SDZ) near the cutting surface in metal chips of Ti-6Al-4V formed during machining was investigated using focused ion beam (FIB) specimen preparation and transmission electron microscopy (TEM) imaging. Use of the FIB allowed precise extraction of the specimen across this region to reveal its inhomogeneous microstructure resulting from the non-uniform distribution of strain, strain rate, and temperature generated during the cutting process. Initial imaging from conventional TEM foil preparation revealed microstructures ranging from heavily textured to regions of fine grains. Using FIB preparation, the transverse microstructure could be interpreted as fine grains nearmore » the cutting surface which transitioned to coarse grains toward the free surface. At the cutting surface a 10 nm thick recrystallized layer was observed capping a 20 nm thick amorphous layer.« less

Spectroscopic Ellipsometry Studies of n-i-p Hydrogenated Amorphous Silicon Based Photovoltaic Devices

PubMed Central

Karki Gautam, Laxmi; Junda, Maxwell M.; Haneef, Hamna F.; Collins, Robert W.; Podraza, Nikolas J.

2016-01-01

Optimization of thin film photovoltaics (PV) relies on characterizing the optoelectronic and structural properties of each layer and correlating these properties with device performance. Growth evolution diagrams have been used to guide production of materials with good optoelectronic properties in the full hydrogenated amorphous silicon (a-Si:H) PV device configuration. The nucleation and evolution of crystallites forming from the amorphous phase were studied using in situ near-infrared to ultraviolet spectroscopic ellipsometry during growth of films prepared as a function of hydrogen to reactive gas flow ratio R = [H2]/[SiH4]. In conjunction with higher photon energy measurements, the presence and relative absorption strength of silicon-hydrogen infrared modes were measured by infrared extended ellipsometry measurements to gain insight into chemical bonding. Structural and optical models have been developed for the back reflector (BR) structure consisting of sputtered undoped zinc oxide (ZnO) on top of silver (Ag) coated glass substrates. Characterization of the free-carrier absorption properties in Ag and the ZnO + Ag interface as well as phonon modes in ZnO were also studied by spectroscopic ellipsometry. Measurements ranging from 0.04 to 5 eV were used to extract layer thicknesses, composition, and optical response in the form of complex dielectric function spectra (ε = ε1 + iε2) for Ag, ZnO, the ZnO + Ag interface, and undoped a-Si:H layer in a substrate n-i-p a-Si:H based PV device structure. PMID:28773255

Solid-state flat panel imager with avalanche amorphous selenium

NASA Astrophysics Data System (ADS)

Scheuermann, James R.; Howansky, Adrian; Goldan, Amir H.; Tousignant, Olivier; Levéille, Sébastien; Tanioka, K.; Zhao, Wei

2016-03-01

Active matrix flat panel imagers (AMFPI) have become the dominant detector technology for digital radiography and fluoroscopy. For low dose imaging, electronic noise from the amorphous silicon thin film transistor (TFT) array degrades imaging performance. We have fabricated the first prototype solid-state AMFPI using a uniform layer of avalanche amorphous selenium (a-Se) photoconductor to amplify the signal to eliminate the effect of electronic noise. We have previously developed a large area solid-state avalanche a-Se sensor structure referred to as High Gain Avalanche Rushing Photoconductor (HARP) capable of achieving gains of 75. In this work we successfully deposited this HARP structure onto a 24 x 30 cm2 TFT array with a pixel pitch of 85 μm. An electric field (ESe) up to 105 Vμm-1 was applied across the a-Se layer without breakdown. Using the HARP layer as a direct detector, an X-ray avalanche gain of 15 +/- 3 was achieved at ESe = 105 Vμm-1. In indirect mode with a 150 μm thick structured CsI scintillator, an optical gain of 76 +/- 5 was measured at ESe = 105 Vμm-1. Image quality at low dose increases with the avalanche gain until the electronic noise is overcome at a constant exposure level of 0.76 mR. We demonstrate the success of a solid-state HARP X-ray imager as well as the largest active area HARP sensor to date.

van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

NASA Astrophysics Data System (ADS)

Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

2018-03-01

Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell.

PubMed

Liu, Wenzhu; Meng, Fanying; Zhang, Xiaoyu; Liu, Zhengxin

2015-12-09

The interface microstructure of a silicon heterojunction (SHJ) solar cell was investigated. We found an ultrathin native oxide layer (NOL) with a thickness of several angstroms was formed on the crystalline silicon (c-Si) surface in a very short time (∼30 s) after being etched by HF solution. Although the NOL had a loose structure with defects that are detrimental for surface passivation, it acted as a barrier to restrain the epitaxial growth of hydrogenated amorphous silicon (a-Si:H) during the plasma-enhanced chemical vapor deposition (PECVD). The microstructure change of the NOL during the PECVD deposition of a-Si:H layers with different conditions and under different H2 plasma treatments were systemically investigated in detail. When a brief H2 plasma was applied to treat the a-Si:H layer after the PECVD deposition, interstitial oxygen and small-size SiO2 precipitates were transformed to hydrogenated amorphous silicon suboxide alloy (a-SiO(x):H, x ∼ 1.5). In the meantime, the interface defect density was reduced by about 50%, and the parameters of the SHJ solar cell were improved due to the post H2 plasma treatment.

Mechanisms of the formation of low spatial frequency LIPSS on Ni/  Ti reactive multilayers

NASA Astrophysics Data System (ADS)

Cangueiro, Liliana T.; Cavaleiro, André J.; Morgiel, Jerzy; Vilar, Rui

2016-09-01

The present paper aims at investigating the mechanisms of imprinting LIPSS (laser-induced periodic surface structures), arrangements of parallel ripples with a periodicity slightly smaller than the radiation wavelength, on metallic surfaces. To this end, Ni/Ti multi-layered samples produced by magnetron sputtering were textured with LIPSS using a 1030 nm, 560 fs pulse duration laser and pulse frequency of 1 kHz, and the resulting surfaces were investigated by scanning and transmission electron microscopies. The results obtained show that the core of the ripples remains in the solid state during the laser treatment, except for a layer of material about 30 nm thick at the valleys and 65-130 nm thick at the top of the crests, which melts and solidifies forming NiTi with an amorphous structure. A layer of ablation debris composed of amorphous NiTi nanoparticles was redeposited on the LIPSS crests. The results achieved indicate that the periodic variation of the absorbed radiation intensity leads to a variation of the predominant ablation mechanisms and, consequently, of the ablation rate, thus explaining the rippled surface topography. The comparison with theoretical predictions suggests that in the intensity maxima (corresponding to the valleys) the material is removed by liquid spallation, while at its minima (the crests) the predominant material removal mechanism is melting and vaporization. These results support Sipe et al LIPSS formation theory and are in contradiction with the theories that explain the formation of LIPSS by convective fluid flow or self-organized mass transport of a laser-induced instability.

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

PubMed Central

Zhao, Wenjing; Li, Hua; Furuta, Mamoru

2018-01-01

In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses (TIGZO) are investigated. As the TIGZO increased, the turn-on voltage (Von) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm2·V−1·s−1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the TIGZO. The PBS results exhibit that the Von shift is aggravated as the TIGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various TIGZO values is revealed using current–voltage and capacitance–voltage (C–V) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source (Cgs) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the TIGZO value increased, the hump in the off state of the Cgs curve was gradually weakened. PMID:29621154

Nanometer-resolved chemical analyses of femtosecond laser-induced periodic surface structures on titanium

NASA Astrophysics Data System (ADS)

Kirner, Sabrina V.; Wirth, Thomas; Sturm, Heinz; Krüger, Jörg; Bonse, Jörn

2017-09-01

The chemical characteristics of two different types of laser-induced periodic surface structures (LIPSS), so-called high and low spatial frequency LIPSS (HSFL and LSFL), formed upon irradiation of titanium surfaces by multiple femtosecond laser pulses in air (30 fs, 790 nm, 1 kHz), are analyzed by various optical and electron beam based surface analytical techniques, including micro-Raman spectroscopy, energy dispersive X-ray analysis, X-ray photoelectron spectroscopy, and Auger electron spectroscopy. The latter method was employed in a high-resolution mode being capable of spatially resolving even the smallest HSFL structures featuring spatial periods below 100 nm. In combination with an ion sputtering technique, depths-resolved chemical information of superficial oxidation processes was obtained, revealing characteristic differences between the two different types of LIPSS. Our results indicate that a few tens of nanometer shallow HSFL are formed on top of a ˜150 nm thick graded superficial oxide layer without sharp interfaces, consisting of amorphous TiO2 and partially crystallized Ti2O3. The larger LSFL structures with periods close to the irradiation wavelength originate from the laser-interaction with metallic titanium. They are covered by a ˜200 nm thick amorphous oxide layer, which consists mainly of TiO2 (at the surface) and other titanium oxide species of lower oxidation states underneath.

Crystal-to-glass-transition induced elastic anomaly of cerium-iron multilayer films and texture-related mechanical properties after hydrogenation

NASA Astrophysics Data System (ADS)

Hassdorf, R.; Arend, M.; Felsch, W.

1995-04-01

The flexural modulus EF of pure and hydrided cerium-iron multilayer films has been measured at 300 K as a function of the modulation wavelength Λ using a vibrating-reed technique. EF is strongly correlated to the structure of the layered systems. In the pure Ce/Fe multilayers, the Fe sublayers show a structural transition from an amorphous to the bcc crystalline phase for a thickness near 20 Å. At this transition, the modulus EF is reduced by ~70%. The elastic softening occurs already, as a precursor to the structural change, for the crystalline Fe sublayers somewhat above the thickness for amorphous growth. This behavior reveals close similarities to the crystal-to-glass transition in bulk metallic alloys and compounds which seems to be driven by a shear instability of the crystal lattice. Hydrogenation leads to multilayers built of CeH~2/Fe. The Fe sublayers grow in the bcc structure above 10 Å, with a pronounced (110) or (111) texture for low- or room-temperature deposition. The flexural moduli are larger as compared to the nonhydrided multilayers and distinctly different for the two Fe textures. A simple calculation shows that the texture-related differences mainly result from the bulk properties of the Fe layers, but a contribution of interfacial effects cannot be excluded.

Microstructural evolution of diamond growth during HFCVD

NASA Technical Reports Server (NTRS)

Singh, J.

1994-01-01

High resolution transmission electron microscopy (HRTEM) was used to study the nucleation and growth mechanism of diamond by hot filament chemical vapor deposition (HFCVD) process. A novel technique has shown a direct evidence for the formation of the diamond-like carbon layer 8-14 nm thick in which small diamond micro-crystallites were embedded. These diamond micro-crystallites were formed as a result of transformation of diamond-like carbon into diamond. The diamond micro-crystallites present in the amorphous diamond-like carbon layer provided nucleation sites for diamond growth. Large diamond crystallites were observed to grow from these micro-crystallites. The mechanism of diamond growth will be presented based on experimental findings.

Toward an Understanding of Surface Layer Formation, Growth, and Transformation at the Glass–Fluid Interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hopf, Juliane; Eskelsen, Jeremy R.; Chiu, Michelle Y.

Silicate glass is a metastable and durable solid that has application to a number of energy and environmental challenges (e.g., microelectronics, fiber optics, and nuclear waste storage). If allowed to react with water over time silicate glass develops an altered layer at the solid-fluid interface. In this study, we used borosilicate glass (LAWB45) as model material to develop a robust understanding of altered layer formation (i.e., amorphous hydrated surface layer and crystalline reaction products). Experiments were conducted at high surface area-to-volume ratio (~200,000 m-1) and 90 °C in the pressurized unsaturated flow (PUF) apparatus for 1.5-years to facilitate the formationmore » of thick altered layers and allow for the effluent solution chemistry to be monitored continuously. A variety of microscopy techniques were used to characterized reacted grains and suggest the average altered layer thickness is 13.2 ± 8.3 μm with the hydrated and clay layer representing 74.8% and 25.2% of the total altered layer, respectively. This estimate is within the experimental error of the value estimated from the B release rate data (~10 ±1 μm/yr) over the 1.5-year duration. PeakForce® quantitative nanomechanical mapping results suggest the hydrated layer has a modulus that ranges between ~20 to 40 GPa, which is in the range of porous silica that contains from ~20 to ~50% porosity, yet significantly lower than dense silica (~70 to 80 GPa). Scanning transmission electron microscopy (STEM) images confirm the presence of pores and an analysis of a higher resolution image of a region provides a qualitative estimate of ≥ 22% porosity in this layer with variations in the hydrated layer in void volume with increasing distance from the unaltered glass. Chemical composition analyses, based on a combination of time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and scanning electron microscopy with X-ray energy dispersive spectroscopy (EDS) and STEM-EDS, clearly show that the altered layer is mainly composed of Al, H, Si, and O with the clay layer being enriched in Li, Zn, Fe, and Mg. The amorphous hydrated layer is enriched in Ca, H, and Zr with a minor amount of K. Furthermore, ToF-SIMS results also suggest the B profile is anti-correlated with the H profile in the hydrated layer. Our selected-area electron diffraction results suggest the structure of the hydrated layer closely resembles opal-AG (amorphous gel-like) with an average crystallite size of ~0.7 nm which is smaller than the critical nucleus for silica nanoparticles (i.e., 1.4 to 3 nm). These results suggest the hydrated layer is more consistent with a polymeric gel rather than a colloidal gel and is comprised of molecular units (<1 nm in size) that result from the difficult to hydrolyze bonds, such as Si—O—Zr units, during the glass corrosion process. The size of individual particles or molecular units is a function of formation conditions (e.g., pH, ionic strength, nano-confinement, solute composition) in the hydrated layer.« less

Toward an Understanding of Surface Layer Formation, Growth, and Transformation at the Glass–Fluid Interface

DOE PAGES

Hopf, Juliane; Eskelsen, Jeremy R.; Chiu, Michelle Y.; ...

2018-02-01

Silicate glass is a metastable and durable solid that has application to a number of energy and environmental challenges (e.g., microelectronics, fiber optics, and nuclear waste storage). If allowed to react with water over time silicate glass develops an altered layer at the solid-fluid interface. In this study, we used borosilicate glass (LAWB45) as model material to develop a robust understanding of altered layer formation (i.e., amorphous hydrated surface layer and crystalline reaction products). Experiments were conducted at high surface area-to-volume ratio (~200,000 m-1) and 90 °C in the pressurized unsaturated flow (PUF) apparatus for 1.5-years to facilitate the formationmore » of thick altered layers and allow for the effluent solution chemistry to be monitored continuously. A variety of microscopy techniques were used to characterized reacted grains and suggest the average altered layer thickness is 13.2 ± 8.3 μm with the hydrated and clay layer representing 74.8% and 25.2% of the total altered layer, respectively. This estimate is within the experimental error of the value estimated from the B release rate data (~10 ±1 μm/yr) over the 1.5-year duration. PeakForce® quantitative nanomechanical mapping results suggest the hydrated layer has a modulus that ranges between ~20 to 40 GPa, which is in the range of porous silica that contains from ~20 to ~50% porosity, yet significantly lower than dense silica (~70 to 80 GPa). Scanning transmission electron microscopy (STEM) images confirm the presence of pores and an analysis of a higher resolution image of a region provides a qualitative estimate of ≥ 22% porosity in this layer with variations in the hydrated layer in void volume with increasing distance from the unaltered glass. Chemical composition analyses, based on a combination of time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and scanning electron microscopy with X-ray energy dispersive spectroscopy (EDS) and STEM-EDS, clearly show that the altered layer is mainly composed of Al, H, Si, and O with the clay layer being enriched in Li, Zn, Fe, and Mg. The amorphous hydrated layer is enriched in Ca, H, and Zr with a minor amount of K. Furthermore, ToF-SIMS results also suggest the B profile is anti-correlated with the H profile in the hydrated layer. Our selected-area electron diffraction results suggest the structure of the hydrated layer closely resembles opal-AG (amorphous gel-like) with an average crystallite size of ~0.7 nm which is smaller than the critical nucleus for silica nanoparticles (i.e., 1.4 to 3 nm). These results suggest the hydrated layer is more consistent with a polymeric gel rather than a colloidal gel and is comprised of molecular units (<1 nm in size) that result from the difficult to hydrolyze bonds, such as Si—O—Zr units, during the glass corrosion process. The size of individual particles or molecular units is a function of formation conditions (e.g., pH, ionic strength, nano-confinement, solute composition) in the hydrated layer.« less

Domain Walls and Macroscopic Spin-Flip-Like States in GdxCo1-x/GdyCo1-y Bilayers

NASA Astrophysics Data System (ADS)

Martin, Jose I.

2005-03-01

Exchange coupled double layers (ECDL) made of rare earth -- transition metal amorphous alloys are of basic and technological interest, as they present different magnetization configurations when the composition is changed or when the temperature is varied crossing the compensation temperatures (Tcomp) of both ferrimagnetic alloys. In this work, amorphous GdxCo1-x(100 nm)/GdyCo1-y(100 nm) ECDL have been prepared to investigate the magnetization reversal and the stable magnetic configurations when the compositions of both layers are similar: x = 0.22, y = 0.24. The samples have been grown by co-sputtering on corning glass substrates, which has allowed to analyze the behaviour within each layer by transverse Kerr effect measurements. A rich variety of behaviours has been found in the temperature range between the Tcomp of both layers, including magnetization reversal by annihilation/creation of a Bloch wall across the sample thickness, and a macroscopic spin-flip-like metamagnetic state where the magnetic moments form a double antiferromagnetic state with the presence of a N'eel-like wall when the magnetizations of both layers are similar [1]. The whole observed behavior can be understood in terms of a deduced general magnetic field -- temperature phase diagram. [1] R. Morales et al. Phys. Rev. B 70, 174440 (2004). Work supported by Spanish CICYT.

Deposition of single and layered amorphous fluorocarbon films by C8F18 PECVD

NASA Astrophysics Data System (ADS)

Yamauchi, Tatsuya; Mizuno, Kouichiro; Sugawara, Hirotake

2008-10-01

Amorphous fluorocarbon films were deposited by plasma-enhanced chemical vapor deposition (PECVD) using C8F18 in closed system at C8F18 pressures 0.1--0.3 Torr, deposition times 1--30 min and plasma powers 20--200 W@. The layered films were composed by repeated PECVD processes. We compared `two-layered' and `intermittently deposited' films, which were made by the PECVD, respectively, with and without renewal of the gas after the deposition of the first layer. The interlayer boundary was observed in the layered films, and that of the intermittently deposited films showed a tendency to be clearer when the deposition time until the interruption of the PECVD was shorter. The film thickness increased linearly in the beginning of the PECVD and it turned down after 10--15 min, that was similar between the single and intermittently deposited films. It was considered that large precursors made at a low decomposition degree of C8F18 contributed to the film deposition in the early phase and that the downturn was due to the development of the C8F18 decomposition. This explanation on the deposition mechanism agrees qualitatively with our experimental data of pressure change and optical emission spectra during the deposition. This work is supported by Grant-in-Aid from Japan Society for the Promotion of Science.

Electromechanical response of amorphous LaAlO{sub 3} thin film probed by scanning probe microscopies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowiak, Alexis S.; Baboux, Nicolas; Albertini, David

The electromechanical response of a 3 nm thick amorphous LaAlO{sub 3} layer obtained by molecular beam epitaxy has been studied using scanning probe microscopies. Although this kind of sample is not ferroelectric due to its amorphous nature, the resulting images are identical to what is generally obtained on truly ferroelectric samples probed by piezoresponse force microscopy: domains of apparently opposite polarisation are detected, and perfect, square shaped hysteresis loops are recorded. Moreover, written patterns are stable within 72 h. We discuss in the general case the possible origins of this behaviour in terms of charge injection, ionic conduction and motion ofmore » oxygen vacancies. In the case presented in this paper, since the writing process has been conducted with applied voltages lower than the injection threshold measured by conductive atomic force Microscopy, allowing to withdraw the hypothesis of charge injection in the sample, we propose that a bistable distribution of oxygen vacancies is responsible for this contrast.« less

Electromechanical response of amorphous LaAlO3 thin film probed by scanning probe microscopies

NASA Astrophysics Data System (ADS)

Borowiak, Alexis S.; Baboux, Nicolas; Albertini, David; Vilquin, Bertrand; Saint Girons, Guillaume; Pelloquin, Sylvain; Gautier, Brice

2014-07-01

The electromechanical response of a 3 nm thick amorphous LaAlO3 layer obtained by molecular beam epitaxy has been studied using scanning probe microscopies. Although this kind of sample is not ferroelectric due to its amorphous nature, the resulting images are identical to what is generally obtained on truly ferroelectric samples probed by piezoresponse force microscopy: domains of apparently opposite polarisation are detected, and perfect, square shaped hysteresis loops are recorded. Moreover, written patterns are stable within 72 h. We discuss in the general case the possible origins of this behaviour in terms of charge injection, ionic conduction and motion of oxygen vacancies. In the case presented in this paper, since the writing process has been conducted with applied voltages lower than the injection threshold measured by conductive atomic force Microscopy, allowing to withdraw the hypothesis of charge injection in the sample, we propose that a bistable distribution of oxygen vacancies is responsible for this contrast.

Study on the dielectric properties of Al2O3/TiO2 sub-nanometric laminates: effect of the bottom electrode and the total thickness

NASA Astrophysics Data System (ADS)

Ben Elbahri, M.; Kahouli, A.; Mercey, B.; Lebedev, O.; Donner, W.; Lüders, U.

2018-02-01

Dielectrics based on amorphous sub-nanometric laminates of TiO2 and Al2O3 are subject to elevated dielectric losses and leakage currents, in large parts due to the extremely thin individual layer thickness chosen for the creation of the Maxwell-Wagner relaxation and therefore the high apparent dielectric constants. The optimization of performances of the laminate itself being strongly limited by this contradiction concerning its internal structure, we will show in this study that modifications of the dielectric stack of capacitors based on these sub-nanometric laminates can positively influence the dielectric losses and the leakage, as for example the nature of the electrodes, the introduction of thick insulating layers at the laminate/electrode interfaces and the modification of the total laminate thickness. The optimization of the dielectric stack leads to the demonstration of a capacitor with an apparent dielectric constant of 90, combined with low dielectric loss (tan δ) of 7 · 10-2 and with leakage currents smaller than 1  ×  10-6 A cm-2 at 10 MV m-1.

Transport in ultrathin gold films decorated with magnetic Gd atoms

NASA Astrophysics Data System (ADS)

Alemani, Micol; Helgren, Erik; Hugel, Addison; Hellman, Frances

2008-03-01

We have performed four-probe transport measurements of ultrathin Au films decorated with Gd ad-atoms. The samples were prepared by quench condensation, i.e., sequential evaporation on a cryogenically cooled substrate under UHV conditions while monitoring the film thickness and resistance. Electrically continuous Au films at thickness of about 2 mono-layers of material are grown on an amorphous Ge wetting layer. The quench condensation method provides a sensitive control on the sample growth process, allowing us to tune the morphological and electrical configuration of the system. The ultrathin gold films develop from an insulating to a metallic state as a function of film thickness. The temperature dependence of the Au conductivity for different thickness is studied. It evolves from hopping transport for the insulating films, to a ln T dependence for thicker films. For gold films in the insulating regime we found a decreasing resistance by adding Gd. This is in agreement with a decreasing tunneling barrier height between metallic atoms. The Gd magnetic moments are randomly oriented for isolated atoms. This magnetic disorder leads to scattering of the charge carriers and a reduced conductivity compared to nonmagnetic materials.

Large area x-ray detectors for cargo radiography

NASA Astrophysics Data System (ADS)

Bueno, C.; Albagli, D.; Bendahan, J.; Castleberry, D.; Gordon, C.; Hopkins, F.; Ross, W.

2007-04-01

Large area x-ray detectors based on phosphors coupled to flat panel amorphous silicon diode technology offer significant advances for cargo radiologic imaging. Flat panel area detectors provide large object coverage offering high throughput inspections to meet the high flow rate of container commerce. These detectors provide excellent spatial resolution when needed, and enhanced SNR through low noise electronics. If the resolution is reduced through pixel binning, further advances in SNR are achievable. Extended exposure imaging and frame averaging enables improved x-ray penetration of ultra-thick objects, or "select-your-own" contrast sensitivity at a rate many times faster than LDAs. The areal coverage of flat panel technology provides inherent volumetric imaging with the appropriate scanning methods. Flat panel area detectors have flexible designs in terms of electronic control, scintillator selection, pixel pitch, and frame rates. Their cost is becoming more competitive as production ramps up for the healthcare, nondestructive testing (NDT), and homeland protection industries. Typically used medical and industrial polycrystalline phosphor materials such as Gd2O2S:Tb (GOS) can be applied to megavolt applications if the phosphor layer is sufficiently thick to enhance x-ray absorption, and if a metal radiator is used to augment the quantum detection efficiency and reduce x-ray scatter. Phosphor layers ranging from 0.2-mm to 1-mm can be "sandwiched" between amorphous silicon flat panel diode arrays and metal radiators. Metal plates consisting of W, Pb or Cu, with thicknesses ranging from 0.25-mm to well over 1-mm can be used by covering the entire area of the phosphor plate. In some combinations of high density metal and phosphor layers, the metal plate provides an intensification of 25% in signal due to electron emission from the plate and subsequent excitation within the phosphor material. This further improves the SNR of the system.

Solvent-Induced Crystallization in Poly(Ethylene Terephthalate) during Mass Transport

NASA Astrophysics Data System (ADS)

Ouyang, Hao

2001-03-01

The solvent transport in poly(ethylene terephthalate) (PET) and related phase transformation were investigated. The data of mass sorption were analyzed according to Harmon¡¦s model for Case I (Fickian), Case II (swelling) and anomalous transport. This transport process in PET is accompanied by the induced crystallization of the original amorphous state. The transformation was studied by wide angle x-ray scattering (WAXS), small angle x-ray scattering (SAXS), Differential Scanning Calorimeter (DSC), density gradient column, and Fourier Transform Infra-Red (FTIR). During this process, the matrix is under a compressive strain that causes different kinetic path of crystallization as compared to that by thermal annealing. This state of strain will assist the development of the solvent-induced crystallization. It also can be explained in terms of the principle of Le Chatelier if the local equilibrium is assumed. The model regarding the crystallization was proposed in terms of the study of long period L, the crystal thickness lc and the thickness of amorphous layer la, obtained from the linear correlation function and interface distribution function.

On sub-T(g) dewetting of nanoconfined liquids and autophobic dewetting of crystallites.

PubMed

Souda, Ryutaro

2012-03-28

The glass transition temperature (T(g)) of thin films is reduced by nanoconfinement, but it is also influenced by the free surface and substrate interface. To gain more insights into their contributions, dewetting behaviors of n-pentane, 3-methylpentane, and toluene films are investigated on various substrates as functions of temperature and film thickness. It is found that monolayers of these molecules exhibit sub-T(g) dewetting on a perfluoro-alkyl modified Ni substrate, which is attributable to the evolution of a 2D liquid. The onset temperature of dewetting increases with film thickness because fluidity evolves via cooperative motion of many molecules; sub-T(g) dewetting is observed for films thinner than 5 monolayers. In contrast, monolayers wet substrates of graphite, silicon, and amorphous solid water until crystallization occurs. The crystallites exhibit autophobic dewetting on the substrate covered with a wetting monolayer. The presence of premelting layers is inferred from the fact that n-pentane crystallites disappear on amorphous solid water via intermixing. Thus, the properties of quasiliquid formed on the crystallite surface differ significantly from those of the 2D liquid formed before crystallization.

Broadband absorption enhancement in amorphous Si solar cells using metal gratings and surface texturing

NASA Astrophysics Data System (ADS)

Magdi, Sara; Swillam, Mohamed A.

2017-02-01

The efficiencies of thin film amorphous silicon (a-Si) solar cells are restricted by the small thickness required for efficient carrier collection. This thickness limitations result in poor light absorption. In this work, broadband absorption enhancement is theoretically achieved in a-Si solar cells by using nanostructured back electrode along with surface texturing. The back electrode is formed of Au nanogratings and the surface texturing consists of Si nanocones. The results were then compared to random texturing surfaces. Three dimensional finite difference time domain (FDTD) simulations are used to design and optimize the structure. The Au nanogratings achieved absorption enhancement in the long wavelengths due to sunlight coupling to surface plasmon polaritons (SPP) modes. High absorption enhancement was achieved at short wavelengths due to the decreased reflection and enhanced scattering inside the a-Si absorbing layer. Optimizations have been performed to obtain the optimal geometrical parameters for both the nanogratings and the periodic texturing. In addition, an enhancement factor (i.e. absorbed power in nanostructured device/absorbed power in reference device) was calculated to evaluate the enhancement obtained due to the incorporation of each nanostructure.

Ion beam enhanced etching of LiNbO 3

NASA Astrophysics Data System (ADS)

Schrempel, F.; Gischkat, Th.; Hartung, H.; Kley, E.-B.; Wesch, W.

2006-09-01

Single crystals of z- and x-cut LiNbO 3 were irradiated at room temperature and 15 K using He +- and Ar +-ions with energies of 40 and 350 keV and ion fluences between 5 × 10 12 and 5 × 10 16 cm -2. The damage formation investigated with Rutherford backscattering spectrometry (RBS) channeling analysis depends on the irradiation temperature as well as the ion species. For instance, He +-irradiation of z-cut material at 300 K provokes complete amorphization at 2.0 dpa (displacements per target atom). In contrast, 0.4 dpa is sufficient to amorphize the LiNbO 3 in the case of Ar +-irradiation. Irradiation at 15 K reduces the number of displacements per atom necessary for amorphization. To study the etching behavior, 400 nm thick amorphous layers were generated via multiple irradiation with He +- and Ar +-ions of different energies and fluences. Etching was performed in a 3.6% hydrofluoric (HF) solution at 40 °C. Although the etching rate of the perfect crystal is negligible, that of the amorphized regions amounts to 80 nm min -1. The influence of the ion species, the fluence, the irradiation temperature and subsequent thermal treatment on damage and etching of LiNbO 3 are discussed.

Development of RF sputtered chromium oxide coating for wear application

NASA Technical Reports Server (NTRS)

Bhushan, B.

1979-01-01

The radio frequency sputtering technique was used to deposite a hard refractory, chromium oxide coating on an Inconel X-750 foil 0.1 mm thick. Optimized sputtering parameters for a smooth and adherent coating were found to be as follows: target-to-substrate spacing, 41.3 mm; argon pressure, 5-10 mTorr; total power to the sputtering module, 400 W (voltage at the target, 1600 V), and a water-cooled substrate. The coating on the annealed foil was more adherent than that on the heat-treated foil. Substrate biasing during the sputter deposition of Cr2O3 adversely affected adherence by removing naturally occurring interfacial oxide layers. The deposited coatings were amorphous and oxygen deficient. Since amorphous materials are extremely hard, the structure was considered to be desirable.

Thick optical waveguides in lithium niobate induced by swift heavy ions (approximately 10 MeV/amu) at ultralow fluences.

PubMed

Olivares, José; Crespillo, Miguel L; Caballero-Calero, Olga; Ynsa, María D; García-Cabañes, Angel; Toulemonde, Marcel; Trautmann, Christina; Agulló-López, Fernando

2009-12-21

Heavy mass ions, Kr and Xe, having energies in the approximately 10 MeV/amu range have been used to produce thick planar optical waveguides at the surface of lithium niobate (LiNbO3). The waveguides have a thickness of 40-50 micrometers, depending on ion energy and fluence, smooth profiles and refractive index jumps up to 0.04 (lambda = 633 nm). They propagate ordinary and extraordinary modes with low losses keeping a high nonlinear optical response (SHG) that makes them useful for many applications. Complementary RBS/C data provide consistent values for the partial amorphization and refractive index change at the surface. The proposed method is based on ion-induced damage caused by electronic excitation and essentially differs from the usual implantation technique using light ions (H and He) of MeV energies. It implies the generation of a buried low-index layer (acting as optical barrier), made up of amorphous nanotracks embedded into the crystalline lithium niobate crystal. An effective dielectric medium approach is developed to describe the index profiles of the waveguides. This first test demonstration could be extended to other crystalline materials and could be of great usefulness for mid-infrared applications.

Bio-Inspired Bright Structurally Colored Colloidal Amorphous Array Enhanced by Controlling Thickness and Black Background.

PubMed

Iwata, Masanori; Teshima, Midori; Seki, Takahiro; Yoshioka, Shinya; Takeoka, Yukikazu

2017-07-01

Inspired by Steller's jay, which displays angle-independent structural colors, angle-independent structurally colored materials are created, which are composed of amorphous arrays of submicrometer-sized fine spherical silica colloidal particles. When the colloidal amorphous arrays are thick, they do not appear colorful but almost white. However, the saturation of the structural color can be increased by (i) appropriately controlling the thickness of the array and (ii) placing the black background substrate. This is similar in the case of the blue feather of Steller's jay. Based on the knowledge gained through the biomimicry of structural colored materials, colloidal amorphous arrays on the surface of a black particle as the core particle are also prepared as colorful photonic pigments. Moreover, a structural color on-off system is successfully built by controlling the background brightness of the colloidal amorphous arrays. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y. Simon; Deb, Satyen K.

1990-01-01

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.

Study of the amorphization of surface silicon layers implanted by low-energy helium ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomov, A. A., E-mail: lomov@ftian.ru; Myakon’kikh, A. V.; Oreshko, A. P.

2016-03-15

The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2–5)-keV helium ions to a dose of D = 6 × 10{sup 15}–5 × 10{sup 17} cm{sup –2} have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ(z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 10{sup 16} cm{sup –2} leads to the formation of a 20- to 30-nm-thick amorphizedmore » surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.« less

Nondestructive characterization of textured a-Si:H/c-Si heterojunction solar cell structures with nanometer-scale a-Si:H and In2O3:Sn layers by spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Matsuki, Nobuyuki; Fujiwara, Hiroyuki

2013-07-01

Nanometer-scale hydrogenated amorphous silicon (a-Si:H) layers formed on crystalline silicon (c-Si) with pyramid-shaped textures have been characterized by spectroscopic ellipsometry (SE) using a tilt angle measurement configuration, in an attempt to establish a nondestructive method for the structural characterization of the a-Si:H/c-Si heterojunction solar cells. By applying an a-Si:H dielectric function model developed recently, the thickness and SiH2 content of the a-Si:H layer have been determined even on the textured substrates. Furthermore, from the SE analysis incorporating the Drude model, the carrier properties of the In2O3:Sn layers in the textured solar-cell structure have been characterized.

Peptoid nanosheets as soluble, two-dimensional templates for calcium carbonate mineralization.

PubMed

Jun, Joo Myung V; Altoe, M Virginia P; Aloni, Shaul; Zuckermann, Ronald N

2015-06-25

Nacre-mimetic materials are of great interest, but difficult to synthesize, because they require the ordering of organic and inorganic materials on several length scales. Here we introduce peptoid nanosheets as a versatile two-dimensional platform to develop nacre mimetic materials. Free-floating zwitterionic nanosheets were mineralized with thin films of amorphous calcium carbonate (of 2-20 nm thickness) on their surface to produce planar nacre synthons. These can serve as tunable building blocks to produce layered brick and mortar nanoarchitectures.

UV Irradiation Effects in Pure and Tin-Doped Amorphous AsSe Films

DTIC Science & Technology

2001-06-01

during irradiation did not exceed 40 ’C. 304 M. Popescu, M. lovu, W. Hloyer, 0. Shpotyuk , F. Sava, A. L6rinczi 3. Results Pure and tin-doped AsSe filns...9000 ,- ,, ---, ,, - ,, - 9000 .... ... .-.. .. r111h) (222) Illuminated 8000 8000 - 7000 7000 lie (220) 6000 6000 5000 O 5000 4000 - 4000 3000 .L...Popescu, M. lovu, W. Hoyer, 0. Shpotyuk , F. Sava, A. L6rinczi the effective thickness of the layers and, possibly, the correlation length. The photo

Structural and chemical alteration of crystalline olivine under low energy He+ irradiation

NASA Astrophysics Data System (ADS)

Demyk, K.; Carrez, Ph.; Leroux, H.; Cordier, P.; Jones, A. P.; Borg, J.; Quirico, E.; Raynal, P. I.; d'Hendecourt, L.

2001-03-01

We present the results of irradiation experiments on crystalline olivine with He+ ions at energies of 4 and 10 keV and fluences varying from 5 1016 to 1018 ions/cm2. The aim of these experiments is to simulate ion implantation into interstellar grains in shocks in the ISM. Irradiated samples were analysed by transmission electron microscopy (TEM). The irradiation causes the amorphization of the olivine, at all He+ fluences considered. The thickness of the amorphized region is 40 +/- 15 nm and 90 +/- 10 nm for the 4 keV and 10 keV experiments, respectively. The amorphization of the olivine occurs in conjunction with an increase in the porosity of the material due to the formation of bubbles. In addition, the amorphized layer is deficient in oxygen and magnesium. We find that the O/Si and Mg/Si ratios decrease as the He+ fluence increases. These experiments show that the irradiation of dust in supernova shocks can efficiently alter the dust structure and composition. Our result are consistent with the lack of crystalline silicates in the interstellar medium and also with the compositional evolution observed from olivine-type silicates around evolved stars to pyroxene-type silicates around protostars.

Effect of active-layer composition and structure on device performance of coplanar top-gate amorphous oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Yue, Lan; Meng, Fanxin; Chen, Jiarong

2018-01-01

The thin-film transistors (TFTs) with amorphous aluminum-indium-zinc-oxide (a-AIZO) active layer were prepared by dip coating method. The dependence of properties of TFTs on the active-layer composition and structure was investigated. The results indicate that Al atoms acted as a carrier suppressor in IZO films. Meanwhile, it was found that the on/off current ratio (I on/off) of TFT was improved by embedding a high-resistivity AIZO layer between the low-resistivity AIZO layer and gate insulator. The improvement in I on/off was attributed to the decrease in off-state current of double-active-layer TFT due to an increase in the active-layer resistance and the contact resistance between active layer and source/drain electrode. Moreover, on-state current and threshold voltage (V th) can be mainly controlled through thickness and Al content of the low-resistivity AIZO layer. In addition, the saturation mobility (μ sat) of TFTs was improved with reducing the size of channel width or/and length, which was attributed to the decrease in trap states in the semiconductor and at the semiconductor/gate-insulator interface with the smaller channel width or/and shorter channel length. Thus, we can demonstrate excellent TFTs via the design of active-layer composition and structure by utilizing a low cost solution-processed method. The resulting TFT, operating in enhancement mode, has a high μ sat of 14.16 cm2 V-1 s-1, a small SS of 0.40 V/decade, a close-to-zero V th of 0.50 V, and I on/off of more than 105.

Compensated amorphous silicon solar cell

DOEpatents

Devaud, Genevieve

1983-01-01

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO2 multilayer heterostructures

NASA Astrophysics Data System (ADS)

Cherkova, S. G.; Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Kamaev, G. N.; Skuratov, V. A.

2017-08-01

Light-emitting nanoclusters were formed in Si/SiO2 multilayer structures irradiated with 167 MeV Xe ions to the doses of 1011-3  ×  1014 cm-2 and annealed in the forming-gas at 500 °C and in nitrogen at 800-1100 °C, 30 min. The thicknesses were ~4 nm or ~7-8 for the Si, and ~10 nm for the SiO2 layers. The structures were studied using photoluminescence (PL), Raman spectroscopy, and the cross-sectional high resolution transmission electron microscopy (HRTEM). As-irradiated samples showed the PL, correlating with the growth of the ion doses. HRTEM found the layers to be partly disintegrated. The thickness of the amorphous Si layer was crucial. For 4 nm thick Si layers the PL was peaking at ~490 nm, and quenched by the annealing. It was ascribed to the structural imperfections. For the thicker Si layers the PL was peaking at ~600 nm and was attributed to the Si-rich nanoclusters in silicon oxide. The annealing increases the PL intensity and shifts the band to ~790 nm, typical of Si nanocrystals. Its intensity was proportional to the dose. Raman spectra confirmed the nanocrystals formation. All the results obtained evidence the material melting in the tracks for 10-11-10-10 s providing thereby fast diffusivities of the atoms. The thicker Si layers provide more excess Si to create the nanoclusters via a molten state diffusion.

Tandem junction amorphous silicon solar cells

DOEpatents

Hanak, Joseph J.

1981-01-01

An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y.S.; Deb, S.K.

1990-10-02

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. 6 figs.

Size effects on the thermal conductivity of amorphous silicon thin films

DOE PAGES

Thomas Edwin Beechem; Braun, Jeffrey L.; Baker, Christopher H.; ...

2016-04-01

In this study, we investigate thickness-limited size effects on the thermal conductivity of amorphous silicon thin films ranging from 3 to 1636 nm grown via sputter deposition. While exhibiting a constant value up to ~100 nm, the thermal conductivity increases with film thickness thereafter. The thickness dependence we demonstrate is ascribed to boundary scattering of long wavelength vibrations and an interplay between the energy transfer associated with propagating modes (propagons) and nonpropagating modes (diffusons). A crossover from propagon to diffuson modes is deduced to occur at a frequency of ~1.8 THz via simple analytical arguments. These results provide empirical evidencemore » of size effects on the thermal conductivity of amorphous silicon and systematic experimental insight into the nature of vibrational thermal transport in amorphous solids.« less

Characterization of BaTiO3 nanocubes assembled into highly ordered monolayers using micro- and nano-Raman spectroscopy

NASA Astrophysics Data System (ADS)

Itasaka, Hiroki; Mimura, Ken-ichi; Nishi, Masayuki; Kato, Kazumi

2018-05-01

We investigated the influence of heat treatment on the crystallographic structure and ferroelectric phase transition behavior of barium titanate (BaTiO3, BT) nanocubes assembled into highly ordered monolayers, using tip-enhanced Raman spectroscopy (TERS), temperature-dependent micro-Raman spectroscopy, and scanning transmission electron microscopy (STEM). TER spectra from individual BT nanocubes with the size of about 20 nm were obtained with a side-illumination optical setup, and revealed that heat treatment enhances their tetragonality. The result of temperature-dependent micro-Raman spectroscopy showed that the ferroelectric phase transition behavior of the monolayers becomes similar to that of bulk BT through heat treatment in spite of their thickness. STEM observation for the cross-section of the heated BT nanocube monolayer showed that amorphous layers exist at the interface between BT nanocubes in face-to-face contact. These results indicate that the tetragonal crystal structure of BT nanocubes is stabilized by heat treatment and the formation of the interfacial amorphous layer during heat treatment may be a key to this phenomenon.

Low temperature production of large-grain polycrystalline semiconductors

DOEpatents

Naseem, Hameed A [Fayetteville, AR; Albarghouti, Marwan [Loudonville, NY

2007-04-10

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Spin-dependent tunneling effects in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Gao, Li

2009-03-01

It has long been known that current extracted from magnetic electrodes through ultra thin oxide tunnel barriers is spin polarized. This current gives rise to two important properties: tunneling magnetoresistance (TMR) when the tunnel barrier is sandwiched between two thin magnetic electrodes and, spin momentum transfer, which can be used to manipulate the magnetic state of the magnetic electrodes. In the first part of my talk I show how the structure of thin CoFe layers can be made amorphous by simply sandwiching them between two amorphous layers, one of them the tunnel barrier. No glass forming elements are needed. By slightly changing the thickness of these layers or by heating them above their glass transition temperature they become crystalline. Surprisingly, the TMR of the amorphous structure is significantly higher than of its crystalline counterpart. The tunneling anisotropic magnetoresistance, which has complex voltage dependence, is also discussed. In the second part of my talk I discuss the microwave emission spectrum from magnetic tunnel junctions induced by spin torque from spin polarized dc current passed through the device. We show that the spectrum is very sensitive to small variations in device structures, even in those devices which exhibit similarly high TMR (˜120%) and which have similar resistance-area products (˜4-10 φμm^2). We speculate that these variations are due to non-uniform spatial magnetic excitation arising from inhomogeneous current flow through the tunnel barrier. [In collaboration with Xin Jiang, M. Hayashi, Rai Moriya, Brian Hughes, Teya Topuria, Phil Rice, and Stuart S.P. Parkin

Cutin plays a role in differentiation of endosperm-derived callus of kiwifruit.

PubMed

Popielarska-Konieczna, Marzena; Kozieradzka-Kiszkurno, Małgorzata; Bohdanowicz, Jerzy

2011-11-01

Cutin fluorescence, after auramine O treatment, was detected on the surface of organogenic areas (protuberances) of endosperm derived callus induced on Murashige and Skoog medium with thidiazuron (0.5 mg l(-1)) in darkness. Electron micrographs of the protuberances revealed cuticle, visible as a dark-staining layer, and amorphous waxes on the cell wall. In some cases the cells of the epidermis-like layer and shoot buds at early stages of development showed thick and characteristically wavy cutin. This waviness corresponds with the wrinkled appearance of the cell wall as observed by scanning electron microscopy. The role of multivesicular bodies in cutin production and transfer to the plasma membrane is discussed.

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oliviero, E.; David, M. L.; Beaufort, M. F.

The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 Degree-Sign C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 Degree-Sign C annealing, complete recrystallization takes placemore » and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {l_brace}311{r_brace} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation.« less

Large piezoelectric strain with ultra-low strain hysteresis in highly c-axis oriented Pb(Zr0.52Ti0.48)O3 films with columnar growth on amorphous glass substrates.

PubMed

Nguyen, Minh D; Houwman, Evert P; Rijnders, Guus

2017-10-10

Thin films of PbZr 0 . 52 Ti 0 . 48 O 3 (PZT) with largely detached columnar grains, deposited by pulsed laser deposition (PLD) on amorphous glass substrates covered with Ca 2 Nb 3 O 10 nanosheets as growth template and using LaNiO 3 electrode layers, are shown to exhibit very high unipolar piezoelectric strain and ultra-low strain hysteresis. The observed increase of the piezoelectric coefficient with increasing film thickness is attributed to the reduction of clamping, because of the increasingly less dense columnar microstructure (more separation between the grains) with across the film thickness. A very large piezoelectric coefficient (490 pm/V) and a high piezoelectric strain (~0.9%) are obtained in 4-µm-thick film under an applied electric field of 200 kV/cm, which is several times larger than in usual PZT ceramics. Further very low strain hysteresis (H≈2-4%) is observed in 4 to 5 µm thick films. These belong to the best values demonstrated so far in piezoelectric films. Fatigue testing shows that the piezoelectric properties are stable up to 10 10 cycles. The growth of high quality PZT films with very large strain and piezoelectric coefficients, very low hysteresis and with long-term stability on a technologically important substrate as glass is of great significance for the development of practical piezo driven microelectromechanical actuator systems.

Lateral solid phase epitaxy of silicon and application to the fabrication of metal oxide semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Greene, Brian Joseph

Thin film silicon on insulator fabrication is an increasingly important technology requirement for improving performance in future generation devices and circuits. One process for SOI fabrication that has recently been generating renewed interest is Lateral Solid Phase Epitaxy (LSPE) of silicon over oxide. This process involves annealing amorphous silicon that has been deposited on oxide patterned Si wafers. The (001) Si substrate forms the crystalline seed for epitaxial growth, permitting the generation of Si films that are both single crystal, and oriented to the substrate. This method is particularly attractive to fabrication that requires low temperature processing, because the Si films are deposited in the amorphous phase at temperatures near 525°C, and crystallized at temperatures near 570°C. It is also attractive for applications requiring three dimensional stacking of active silicon device layers, due to the relatively low temperatures involved. For sub-50 nm gate length MOSFET fabrication, an SOI thickness on the order of 10 nm will be required. One limitation of the LSPE process has been the need for thick films (0.5--2 mum) and/or heavy P doping (10 19--1020 cm-3) to increase the maximum achievable lateral growth distance, and therefore minimize the area on the substrate occupied by seed holes. This dissertation discusses the characterization and optimization of process conditions for large area LSPE silicon film growth, as well as efforts to adapt the traditional LSPE process to achieve ultra-thin SOI layers (Tsilicon ≤ 25 nm) while avoiding the use of heavy active doping layers. MOSFETs fabricated in these films that exhibit electron mobility comparable to the Universal Si MOS Mobility are described.

Microstructure et proprietes electriques de l'oxyde de vanadium pour les microbolometres

NASA Astrophysics Data System (ADS)

Cadieux, Catherine

Recent technological breakthroughs in the fabrication of microsystems will soon allow the mass production of infrared cameras. Subsequent price cut will open many new sectors of application. Because of its electrical properties, sputtered vanadium oxide has already been identified as the leading candidate for the active material of microbolometers. However, the large number of different crystallographic phases, as well as the instable nature of reactive sputtering, haveled to numerous contradictions in the existing literature. With the objective of understanding the impact of the deposition parameters on the microstructure, and of the microstructure on the electrical properties, vanadium oxide thin films have been deposited and characterised. In order to study their impact on the microstructure, oxidation state and pulse at the target, substrate bias and temperature, power, and film thickness were varied independently. The resulting thin films have been characterised by X-ray diffraction, Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, spectral reflectometry, optical interferometry as well as four-point probe and Van Der Pauw electrical measurements. Because of the instability of the poisoning regime, the actual system configuration forbids the deposition of phases with composition between V 3O7 and V7O3. Films deposited under a strong bias in the poisoned regime having the best properties, their growth mechanism has been thoroughly investigated. Under those conditions, the bombarding ions are energetic enough to modify the structure of the underlying thin film without resputtering it. A complex relation linking temperature, thickness and microstructure is observed. As the thickness is increased, the structure changes from amorphous, to almost monocristalline V2O5 (001) oriented, to polycristalline. For higher deposition power, the polycristalline section contains V3O7 in addition to the multiple orientations of V2O5. Those germinations which have already been observed but not explained in literature can be attributed to the accumulation of germination centers, a stress buildup for the crystalline sections, and a substrate heating caused by the ions bombardment. This last effect is also suggested to be the cause of the amorphous phase crystallisation for the films with longer deposition times. Films deposited at different temperatures show the same microstructure transitions. Two different behavior regimes can be proposed as function of the adatoms' energy. For low temperature, increasing the adatom energy increases the diffusion which promotes the formation of the lowest surface energy stoichiometry and orientation, V2O 5(001). At higher temperature, energy is sufficient to form more energetically expensive orientation and phases. Resistivity is strongly dependant on grain boundaries density as seen by its relationship with lateral grain size. The thin film resistivity is also increased with the number of different crystallographic orientation present in it. To circumvent the high sheet resistance of the deposited single layer films, a multilayer stacking of alternating oxides and metal layers has been deposited. This approach has permitted this project's industrial collaborator to obtain a sheet resistance of 250 kO/□and a TCR of -1.59 %/K. The microstructure of the multilayer is however very heterogeneous. Not only can the metal layers be identified, it is also possible to observe the amorphous to polycrystalline transition described higher for every oxide layer. This multilayer, as well as the best single layer film produced have been annealed for 2 hours at 400°C in high vacuum. The annealed multilayer doesn't show any diffraction peaks, has very low resistance, and an almost null TCR generally attributed to metallic compounds We suggest that the diffusion of the vanadium layers into the stack created a polycrystalline structure with grains that are too small to be seen by XRD. The single layer underwent thermal reduction to form the VO2(B)phase and also became very conductive. Its TCR was afterward measured at the interesting value of -1.74 %/K. Is it suggested that the low resistivity is caused by the presence of small grains of the metallic phase of VO2, which happens to be the next step in the reduction process. Single layer annealing seems to be a promising avenue for the development of films adequate for microbolometer integration with the present deposition system. It is nonetheless recommended to pursue this avenue using films that are homogenous on their thickness in order to decouple the thickness dependence of deposition and thermal reduction. Multilayers using already homogenous amorphous oxides can also be a solution. Finally, non-reactive deposition of tungsten doped thin films followed by an oxidizing anneal may be an option that would bypass the uniformity and stability problems of the present project.

In vitro characterisation of a sol-gel derived in situ silica-coated silicate and carbonate co-doped hydroxyapatite nanopowder for bone grafting.

PubMed

Latifi, Seyed Mohsen; Fathi, Mohammadhossein; Sharifnabi, Ali; Varshosaz, Jaleh

2017-06-01

Design and synthesis of materials with better properties and performance are essential requirements in the field of biomaterials science that would directly improve patient quality of life. For this purpose, in situ silica-coated silicate and carbonate co-doped hydroxyapatite (Sc/S.C.HA) nanopowder was synthesized via the sol-gel method. Characterisation of the prepared nanopowder was carried out by XRD, FTIR, TEM, SEM, EDX, ICP, zeta potential, acid dissolution test, and cell culture test. The substitution of the silicate and carbonate ions into hydroxyapatite structure was confirmed by FTIR analysis. XRD analysis showed that silica is an amorphous phase, which played a role in covering the surface of the S.C.HA nanoparticles as confirmed by acid dissolution test. Low thickness and low integrity of the amorphous silica surface layer facilitated ions release from S.C.HA nanoparticles into physiological saline solution. Zeta potential of the prepared nanopowder suspended in physiological saline solution was -27.3±0.2mV at pH7.4. This negatively charged surface, due to the presence of amorphous silica layer upon the S.C.HA nanoparticles, not only had an accelerating effect on in vitro biomineralization of apatite, but also had a positive effect on cell attachment. Copyright © 2017 Elsevier B.V. All rights reserved.

Morphological evolution of carbon nanofibers encapsulating SnCo alloys and its effect on growth of the solid electrolyte interphase layer.

PubMed

Shin, Jungwoo; Ryu, Won-Hee; Park, Kyu-Sung; Kim, Il-Doo

2013-08-27

Two distinctive one-dimensional (1-D) carbon nanofibers (CNFs) encapsulating irregularly and homogeneously segregated SnCo nanoparticles were synthesized via electrospinning of polyvinylpyrrolidone (PVP) and polyacrylonitrile (PAN) polymers containing Sn-Co acetate precursors and subsequent calcination in reducing atmosphere. CNFs synthesized with PVP, which undergoes structural degradation of the polymer during carbonization processes, exhibited irregular segregation of heterogeneous alloy particles composed of SnCo, Co3Sn2, and SnO with a size distribution of 30-100 nm. Large and exposed multiphase SnCo particles in PVP-driven amorphous CNFs (SnCo/PVP-CNFs) kept decomposing liquid electrolyte and were partly detached from CNFs during cycling, leading to a capacity fading at the earlier cycles. The closer study of solid electrolyte interphase (SEI) layers formed on the CNFs reveals that the gradual growth of fiber radius due to continuous increment of SEI layer thickness led to capacity fading. In contrast, SnCo particles in PAN-driven CNFs (SnCo/PAN-CNFs) showed dramatically reduced crystallite sizes (<10 nm) of single phase SnCo nanoparticles which were entirely embedded in dense, semicrystalline, and highly conducting 1-D carbon matrix. The growth of SEI layer was limited and saturated during cycling. As a result, SnCo/PAN-CNFs showed much improved cyclability (97.9% capacity retention) and lower SEI layer thickness (86 nm) after 100 cycles compared to SnCo/PVP-CNFs (capacity retention, 71.9%; SEI layer thickness, 593 nm). This work verifies that the thermal behavior of carbon precursor is highly responsible for the growth mechanism of SEI layer accompanied with particles detachment and cyclability of alloy particle embedded CNFs.

Mechanical and electromagnetic properties of 3D printed hot pressed nanocarbon/poly(lactic) acid thin films

NASA Astrophysics Data System (ADS)

Kotsilkova, R.; Ivanov, E.; Todorov, P.; Petrova, I.; Volynets, N.; Paddubskaya, A.; Kuzhir, P.; Uglov, V.; Biró, I.; Kertész, K.; Márk, G. I.; Biró, L. P.

2017-02-01

We constructed a new type of light-weight, nanocarbon based thin film material having good mechanical properties, thermal stability, and electromagnetic shielding efficiency. Our method, 3D printing combined with hot pressing, is a cheap and industrially upscalable process. First a sandwich structure was created by layer-to-layer deposition of alternating 100 μm thick nanocarbon containing plastic layers and 100 μm thick pristine plastic layers, repeated as building blocks. The 3D printed samples were hot pressed to obtain thin films of 10-30 μm thickness. We used a commercial nanocarbon 3D printing filament (Black Magic). TEM investigations revealed the nanocarbon filler to be a mixture of graphene sheets, short carbon nanotubes, fishbone nanotubes, graphitic nanoparticles, and carbon black. Small-angle X-ray scattering and X-ray diffraction studies showed some amorphization of the nanocarbon filler as a consequence of the hot pressing. The nanoindentation hardness, nanoscratch hardness, and Young's modulus increase gradually by increasing the number of layers in the films, due to an increase of the amount of nanocarbon filler. Microwave absorption also increases continuously with the number of nanocarbon layers, reaching 40% for 3 nanocarbon layers. We demonstrate that unlike most conventional composites loaded with nanocarbons having pronounced dielectric properties, when the real part of permittivity Re(ɛ) is much higher than its imaginary part Im(ɛ) at high frequencies, a combination of 3D printing and hot pressing allows the fabrication of composites with Re ɛ ≈ Im ɛ in a very broad frequency range (0.2-0.6 THz). Our new 3D printed—hot pressed thin films may compete with the CVD graphene sandwiches in electromagnetic shielding applications because of their easier processability and low cost.

Thermo-Optical Properties of Thin-Film TiO2–Al2O3 Bilayers Fabricated by Atomic Layer Deposition

PubMed Central

Ali, Rizwan; Saleem, Muhammad Rizwan; Pääkkönen, Pertti; Honkanen, Seppo

2015-01-01

We investigate the optical and thermo-optical properties of amorphous TiO2–Al2O3 thin-film bilayers fabricated by atomic layer deposition (ALD). Seven samples of TiO2–Al2O3 bilayers are fabricated by growing Al2O3 films of different thicknesses on the surface of TiO2 films of constant thickness (100 nm). Temperature-induced changes in the optical refractive indices of these thin-film bilayers are measured by a variable angle spectroscopic ellipsometer VASE®. The optical data and the thermo-optic coefficients of the films are retrieved and calculated by applying the Cauchy model and the linear fitting regression algorithm, in order to evaluate the surface porosity model of TiO2 films. The effects of TiO2 surface defects on the films’ thermo-optic properties are reduced and modified by depositing ultra-thin ALD-Al2O3 diffusion barrier layers. Increasing the ALD-Al2O3 thickness from 20 nm to 30 nm results in a sign change of the thermo-optic coefficient of the ALD-TiO2. The thermo-optic coefficients of the 100 nm-thick ALD-TiO2 film and 30 nm-thick ALD-Al2O3 film in a bilayer are (0.048 ± 0.134) × 10−4 °C−1 and (0.680 ± 0.313) × 10−4 °C−1, respectively, at a temperature T = 62 °C.

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses.

PubMed

Wang, Dapeng; Zhao, Wenjing; Li, Hua; Furuta, Mamoru

2018-04-05

In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses ( T IGZO ) are investigated. As the T IGZO increased, the turn-on voltage ( V on ) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm²·V −1 ·s −1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the T IGZO . The PBS results exhibit that the V on shift is aggravated as the T IGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various T IGZO values is revealed using current–voltage and capacitance–voltage ( C – V ) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source ( C gs ) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the T IGZO value increased, the hump in the off state of the C gs curve was gradually weakened.

Effects of Fabrication Parameters on Interface of Zirconia and Ti-6Al-4V Joints Using Zr55Cu30Al10Ni5 Amorphous Filler

NASA Astrophysics Data System (ADS)

Liu, Yuhua; Hu, Jiandong; Shen, Ping; Guo, Zuoxing; Liu, Huijie

2013-09-01

ZrO2 was brazed to Ti-6Al-4V using a Zr55Cu30Al10Ni5 (at.%) amorphous filler in a high vacuum at 1173-1273 K. The influences of brazing temperature, holding time, and cooling rate on the microstructure and shear strength of the joints were investigated. The interfacial microstructures can be characterized as ZrO2/ZrO2- x + TiO/(Zr,Ti)2(Cu,Ni)/(Zr,Ti)2(Cu,Ni,Al)/acicular Widmanstäten structure/Ti-6Al-4V. With the increase in the brazing temperature, both the thickness of the ZrO2- x + TiO layer and the content of the (Zr,Ti)2(Cu,Ni) phase decreased. However, the acicular Widmanstäten structure gradually increased. With the increase in the holding time, the (Zr,Ti)2(Cu,Ni) phase decreased, and the thickness of the (Zr,Ti)2(Cu,Ni) + (Zr,Ti)2(Cu,Ni,Al) layer decreased. In addition, cracks formed adjacent to the ZrO2 side under rapid cooling. The microstructures produced under various fabrication parameters directly influence the shear strength of the joints. When ZrO2 and Ti-6Al-4V couples were brazed at 1173 K for 10 min and then cooled at a rate of 5 K/min, the maximum shear strength of 95 MPa was obtained.

The dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the film thickness: αl Experimental limitations and the impact of curvature in the Tauc and Cody plots

NASA Astrophysics Data System (ADS)

Mok, Tat M.; O'Leary, Stephen K.

2007-12-01

Using a model for the optical spectrum associated with hydrogenated amorphous silicon, explicitly taking into account fundamental experimental limitations encountered, we theoretically determine the dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the thickness of the film. We compare these results with that obtained from experiment. We find that the curvature in the Tauc plot plays a significant role in influencing the determination of the Tauc optical gap associated with hydrogenated amorphous silicon, thus affirming an earlier hypothesis of Cody et al. We also find that the spectral dependence of the refractive index plays an important role in influencing the determination of the Cody optical gap. It is thus clear that care must be exercised when drawing conclusions from the dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the thickness of the film.

Superlattice doped layers for amorphous silicon photovoltaic cells

DOEpatents

Arya, Rajeewa R.

1988-01-12

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

Structural Coloration of a Colloidal Amorphous Array is Intensified by Carbon Nanolayers.

PubMed

Takeoka, Yukikazu; Iwata, Masanori; Seki, Takahiro; Nueangnoraj, Khanin; Nishihara, Hirotomo; Yoshioka, Shinya

2018-04-10

In this study, we introduce the possibility of applying a colloidal amorphous array composed of fine silica particles as a structural-color material to invisible information technology. The appearance of a thick filmlike colloidal amorphous array formed from fine silica particles is considerably influenced by incoherent light scattering across the entire visible region. Therefore, regardless of the diameter of the fine silica particles, the thick colloidal amorphous array exhibits a white color to the naked eye. When carbon is uniformly deposited in the colloidal amorphous array by a pressure-pulsed chemical vapor deposition method, incoherent light scattering in the colloidal amorphous array is suppressed. As a result, coherent light scattering due to the short-range order in the colloidal amorphous array becomes conspicuous and the array exhibits a vivid structural color. As structures, such as letters and pictures, can be drawn using this technology, the colloidal amorphous array as a structural-colored material may also be applicable for invisible information technology.

Interaction of Light with Metallized Ultrathin Silicon Membrane

NASA Astrophysics Data System (ADS)

Shome, Krishanu

Freestanding metallized structures, a few tens of nanometer thick, show promise in creating flow-through sensors, single molecule detectors and novel solar cells. In this thesis we study test structures that are a step towards creating such devices. Finite- difference time-domain simulations have been used to understand and predict the interaction of light with such devices. Porous nanocrystalline silicon membrane is a novel freestanding layer structure that has been used as a platform to fabricate and study sensors and novel slot nanohole devices. Optical mode studies of the sensing structures, together with the method of fabrication inspired the creation of ultrathin freestanding hydrogenated amorphous silicon p-i-n junctions solar cells. All the freestanding structures used in this thesis are just a few tens of nanometers in thicknesses. In the first part of the thesis the sensing properties of the metallized porous nanocrystalline structure are studied. The surprising blueshift associated with the sensing peak is observed experimentally and predicted theoretically with the help of simulations. Polarization dependence of the membranes is predicted and confirmed for angled deposition of metal on the membranes. In the next part, a novel slot structure is fabricated and modeled to study the slot effect in nanohole metal-insulator-metal structures. Atomic layer deposition of alumina is used to conformally deposit alumina within the nanohole to create the slot structure. Simulation models were used to calculate the lowest modal volume of 4x10-5 mum3 for an optimized structure. In the last part of the thesis, freestanding solar cells are fabricated by effectively replacing the porous nanocrystalline silicon layer of the membranes with a hydrogenated amorphous silicon p-i-n junction with metal layers on both sides of the p-i-n junction. The metal layers act both as electrical contacts as well as mirrors for a Fabry Perot cavity resonator. This helps in tuning the absorption profile of the solar cell to target near infrared part of the solar spectrum. A correspondence is found between the simulation absorption results with the experimental spectral response of the solar cells. This helps in designing metallized solar cells with ITO layer to improve absorption and hence the efficiency.

Surface roughness in XeF{sub 2} etching of a-Si/c-Si(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stevens, A.A.E.; Beijerinck, H.C.W.

2005-01-01

Single wavelength ellipsometry and atomic force microscopy (AFM) have been applied in a well-calibrated beam-etching experiment to characterize the dynamics of surface roughening induced by chemical etching of a {approx}12 nm amorphous silicon (a-Si) top layer and the underlying crystalline silicon (c-Si) bulk. In both the initial and final phase of etching, where either only a-Si or only c-Si is exposed to the XeF{sub 2} flux, we observe a similar evolution of the surface roughness as a function of the XeF{sub 2} dose proportional to D(XeF{sub 2}){sup {beta}} with {beta}{approx_equal}0.2. In the transition region from the pure amorphous to themore » pure crystalline silicon layer, we observe a strong anomalous increase of the surface roughness proportional to D(XeF{sub 2}){sup {beta}} with {beta}{approx_equal}1.5. Not only the growth rate of the roughness increases sharply in this phase, also the surface morphology temporarily changes to a structure that suggests a cusplike shape. Both features suggest that the remaining a-Si patches on the surface act effectively as a capping layer which causes the growth of deep trenches in the c-Si. The ellipsometry data on the roughness are corroborated by the AFM results, by equating the thickness of the rough layer to 6 {sigma}, with {sigma} the root-mean-square variation of the AFM's distribution function of height differences. In the AFM data, the anomalous behavior is reflected in a too small value of {sigma} which again suggests narrow and deep surface features that cannot be tracked by the AFM tip. The final phase morphology is characterized by an effective increase in surface area by a factor of two, as derived from a simple bilayer model of the reaction layer, using the experimental etch rate as input. We obtain a local reaction layer thickness of 1.5 monolayer consistent with the 1.7 ML value of Lo et al. [Lo et al., Phys. Rev. B 47, 648 (1993)] that is also independent of surface roughness.« less

Large-scale and patternable graphene: direct transformation of amorphous carbon film into graphene/graphite on insulators via Cu mediation engineering and its application to all-carbon based devices

NASA Astrophysics Data System (ADS)

Chen, Yu-Ze; Medina, Henry; Lin, Hung-Chiao; Tsai, Hung-Wei; Su, Teng-Yu; Chueh, Yu-Lun

2015-01-01

Chemical vapour deposition of graphene was the preferred way to synthesize graphene for multiple applications. However, several problems related to transfer processes, such as wrinkles, cleanness and scratches, have limited its application at the industrial scale. Intense research was triggered into developing alternative synthesis methods to directly deposit graphene on insulators at low cost with high uniformity and large area. In this work, we demonstrate a new concept to directly achieve growth of graphene on non-metal substrates. By exposing an amorphous carbon (a-C) film in Cu gaseous molecules after annealing at 850 °C, the carbon (a-C) film surprisingly undergoes a noticeable transformation to crystalline graphene. Furthermore, the thickness of graphene could be controlled, depending on the thickness of the pre-deposited a-C film. The transformation mechanism was investigated and explained in detail. This approach enables development of a one-step process to fabricate electrical devices made of all carbon material, highlighting the uniqueness of the novel approach for developing graphene electronic devices. Interestingly, the carbon electrodes made directly on the graphene layer by our approach offer a good ohmic contact compared with the Schottky barriers usually observed on graphene devices using metals as electrodes.Chemical vapour deposition of graphene was the preferred way to synthesize graphene for multiple applications. However, several problems related to transfer processes, such as wrinkles, cleanness and scratches, have limited its application at the industrial scale. Intense research was triggered into developing alternative synthesis methods to directly deposit graphene on insulators at low cost with high uniformity and large area. In this work, we demonstrate a new concept to directly achieve growth of graphene on non-metal substrates. By exposing an amorphous carbon (a-C) film in Cu gaseous molecules after annealing at 850 °C, the carbon (a-C) film surprisingly undergoes a noticeable transformation to crystalline graphene. Furthermore, the thickness of graphene could be controlled, depending on the thickness of the pre-deposited a-C film. The transformation mechanism was investigated and explained in detail. This approach enables development of a one-step process to fabricate electrical devices made of all carbon material, highlighting the uniqueness of the novel approach for developing graphene electronic devices. Interestingly, the carbon electrodes made directly on the graphene layer by our approach offer a good ohmic contact compared with the Schottky barriers usually observed on graphene devices using metals as electrodes. Electronic supplementary information (ESI) available: Experimental methods; pictures of a new quartz tube and an aged quartz tube before and after annealing Cu foil at 1025 °C for 2 h; Raman spectrum of as-deposited a-C layer; XPS depth profiles of 25 nm-thick pre-deposited a-C film after annealing in the presence of Cu gaseous molecules and the corresponding transformation ratios; ICP-MS results of Cu gaseous molecules captured by the formation of the Ni-Cu alloy; SEM-EDS results of samples with different thicknesses of pre-deposited a-C films; UV-Vis spectrum of the graphene directly transformed from the 5 nm-thick pre-deposited a-C film on quartz substrate. See DOI: 10.1039/c4nr04627g

Far-infrared reflectance spectra of optical black coatings

NASA Technical Reports Server (NTRS)

Smith, S. M.

1983-01-01

Far-infrared specular reflectance spectra of six optically black coatings near normal incidence are presented. The spectra were obtained using nine bandpass transmission filters in the wavelength range between 12 and 300 microns. Data on the construction, thickness, and rms surface roughness of the coatings are also presented. The chemical composition of two coatings can be distinguished from that of the others by a strong absorption feature between 20 and 40 microns which is attributed to amorphous silicate material. Inverse relationships between these spectra and coating roughness and thickness are noted and lead to development of a reflecting-layer model for the measured reflectance. The model is applied to the spectra of several coatings whose construction falls within its constraints.

Understanding the Structure of High-K Gate Oxides - Oral Presentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, Andre

2015-08-25

Hafnium Oxide (HfO 2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO 2 thin films which hasn’t been done with the technique of this study. In this study, two HfO 2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer.more » Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO 2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO 2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO 2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.« less

Role of Near Substrate and Bulk Polymer Morphology on Out-of-Plane Space-Charge Limited Hole Mobility.

PubMed

Turner, Johnathan; Gadisa, Abay

2016-12-07

Charge transport is a central issue in all types of organic electronic devices. In organic films, charge transport is crucially limited by film microstructure and the nature of the substrate/organic interface interactions. In this report, we discuss the influence of active layer thickness on space-charge limited hole transport in pristine polymer and polymer/fullerene bulk heterojunction thin films (∼15-300 nm) in a diode structure. According to the results, the out-of-plane hole mobility in pristine polymers is sensitive to the degree of polymer chain aggregation. Blending the polymers with a fullerene molecule does not change the trend of hole mobility if the polymer tends to make an amorphous structure. However, employing an aggregating polymer in a bulk heterojunction blend gives rise to a marked difference in charge carrier transport behavior compared to the pristine polymer and this difference is sensitive to active layer thickness. In aggregating polymer films, the thickness-dependent interchain interaction was found to have direct impact on hole mobility. The thickness-dependent mobility trend was found to correspond well with the trend of fill factors of corresponding bulk heterojunction solar cells. This investigation has a vital implication for material design and the development of efficient organic electronic devices, including solar cells and light-emitting diodes.

Temperature Dependence of the Resonant Magnetoelectric Effect in Layered Heterostructures.

PubMed

Burdin, Dmitrii A; Ekonomov, Nikolai A; Chashin, Dmitrii V; Fetisov, Leonid Y; Fetisov, Yuri K; Shamonin, Mikhail

2017-10-16

The dependence of the resonant direct magnetoelectric effect on temperature is studied experimentally in planar composite structures. Samples of rectangular shapes with dimensions of 5 mm × 20 mm employed ferromagnetic layers of either an amorphous (metallic glass) alloy or nickel with a thickness of 20-200 μm and piezoelectric layers of single crystalline langatate material or lead zirconate titanate piezoelectric ceramics with a thickness of 500 μm. The temperature of the samples was varied in a range between 120 and 390 K by blowing a gaseous nitrogen stream around them. It is shown that the effective characteristics of the magnetoelectric effect-such as the mechanical resonance frequency f r , the quality factor Q and the magnitude of the magnetoelectric coefficient α E at the resonance frequency-are contingent on temperature. The interrelations between the temperature changes of the characteristics of the magnetoelectric effect and the temperature variations of the following material parameters-Young's modulus Y , the acoustic quality factor of individual layers, the dielectric constant ε , the piezoelectric modulus d of the piezoelectric layer as well as the piezomagnetic coefficients λ (n) of the ferromagnetic layer-are established. The effect of temperature on the characteristics of the nonlinear magnetoelectric effect is observed for the first time. The results can be useful for designing magnetoelectric heterostructures with specified temperature characteristics, in particular, for the development of thermally stabilized magnetoelectric devices.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Inhibiting surface crystallization of amorphous indomethacin by nanocoating.

PubMed

Wu, Tian; Sun, Ye; Li, Ning; de Villiers, Melgardt M; Yu, Lian

2007-04-24

An amorphous solid (glass) may crystallize faster at the surface than through the bulk, making surface crystallization a mechanism of failure for amorphous pharmaceuticals and other materials. An ultrathin coating of gold or polyelectrolytes inhibited the surface crystallization of amorphous indomethacin (IMC), an anti-inflammatory drug and model organic glass. The gold coating (10 nm) was deposited by sputtering, and the polyelectrolyte coating (3-20 nm) was deposited by an electrostatic layer-by-layer assembly of cationic poly(dimethyldiallyl ammonium chloride) (PDDA) and anionic sodium poly(styrenesulfonate) (PSS) in aqueous solution. The coating also inhibited the growth of existing crystals. The inhibition was strong even with one layer of PDDA. The polyelectrolyte coating still permitted fast dissolution of amorphous IMC and improved its wetting and flow. The finding supports the view that the surface crystallization of amorphous IMC is enabled by the mobility of a thin layer of surface molecules, and this mobility can be suppressed by a coating of only a few nanometers. This technique may be used to stabilize amorphous drugs prone to surface crystallization, with the aqueous coating process especially suitable for drugs of low aqueous solubility.

Amorphous sub-nanometre Tb-doped SiO(x)N(y)/SiO2 superlattices for optoelectronics.

PubMed

Ramírez, Joan Manel; Wojcik, Jacek; Berencén, Yonder; Ruiz-Caridad, Alícia; Estradé, Sònia; Peiró, Francesca; Mascher, Peter; Garrido, Blas

2015-02-27

Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices were fabricated by means of alternating deposition of 0.7 nm thick Tb-doped SiOxNy layers and of 0.9 nm thick SiO2 barrier layers in an electron-cyclotron-resonance plasma enhanced chemical vapour deposition system with in situ Tb-doping capability. High resolution transmission electron microscopy images showed a well-preserved superlattice morphology after annealing at a high temperature of 1000 °C. In addition, transparent indium tin oxide (ITO) electrodes were deposited by electron beam evaporation using a shadow mask approach to allow for the optoelectronic characterization of superlattices. Tb(3+) luminescent spectral features were obtained using three different excitation sources: UV laser excitation (photoluminescence (PL)), under a bias voltage (electroluminescence (EL)) and under a highly energetic electron beam (cathodoluminescence (CL)). All techniques displayed Tb(3+) inner transitions belonging to (5)D4 levels except for the CL spectrum, in which (5)D3 transition levels were also observed. Two competing mechanisms were proposed to explain the spectral differences observed between PL (or EL) and CL excitation: the population rate of the (5)D3 state and the non-radiative relaxation rate of the (5)D3-(5)D4 transition due to a resonant OH-mode. Moreover, the large number of interfaces (trapping sites) that electrons have to get through was identified as the main reason for observing a bulk-limited charge transport mechanism governed by Poole-Frenkel conduction in the J-V characteristic. Finally, a linear EL-J dependence was measured, with independent spectral shape and an EL onset voltage as low as 6.7 V. These amorphous sub-nanometre superlattices are meant to provide low-cost solutions in different areas including sensing, photovoltaics or photonics.

Interfacial charge-induced polarization switching in Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} bi-layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yu Jin; Park, Min Hyuk; Jeon, Woojin

2015-12-14

Detailed polarization switching behavior of an Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} (AO/PZT) structure is examined by comparing the phenomenological thermodynamic model to the experimental polarization–voltage (P-V) results. Amorphous AO films with various thicknesses (2–10 nm) were deposited on the polycrystalline 150-nm-thick PZT film. The thermodynamic calculation showed that the transition from the ferroelectric-like state to the paraelectric-like state with increasing AO thickness occurs at ∼3 nm thickness. This paraelectric-like state should have exhibited a negative capacitance effect without permanent polarization switching if no other adverse effects are involved. However, experiments showed typical ferroelectric-like hysteresis loops where the coercive voltage increased with the increasingmore » AO thickness, which could be explained by the carrier injection through the thin AO layer and trapping of the carriers at the AO/PZT interface. The fitting of the experimental P-V loops using the thermodynamic model considering the depolarization energy effect showed that trapped charge density was ∼±0.1 Cm{sup −2} and critical electric field at the Pt electrode/AO interface, at which the carrier transport occurs, was ∼±10 MV/cm irrespective of the AO thickness. Energy band model at each electrostatic state along the P-V loop was provided to elucidate correlation between macroscopic polarization and internal charge state of the stacked films.« less

Amorphous silicon solar cell allowing infrared transmission

DOEpatents

Carlson, David E.

1979-01-01

An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

Elastic and fracture properties of free-standing amorphous ALD Al2O3 thin films measured with bulge test

NASA Astrophysics Data System (ADS)

Rontu, Ville; Nolvi, Anton; Hokkanen, Ari; Haeggström, Edward; Kassamakov, Ivan; Franssila, Sami

2018-04-01

We have investigated elastic and fracture properties of amorphous Al2O3 thin films deposited by atomic layer deposition (ALD) with bulge test technique using a free-standing thin film membrane and extended applicability of bulge test technique. Elastic modulus was determined to be 115 GPa for a 50 nm thick film and 170 GPa for a 15 nm thick film. Residual stress was 142 MPa in the 50 nm Al2O3 film while it was 116 MPa in the 15 nm Al2O3 film. Density was 3.11 g cm‑3 for the 50 nm film and 3.28 g cm‑3 for the 15 nm film. Fracture strength at 100 hPa s‑1 pressure ramp rate was 1.72 GPa for the 50 nm film while for the 15 nm film it was 4.21 GPa, almost 2.5-fold. Fracture strength was observed to be positively strain-rate dependent. Weibull moduli of these films were very high being around 50. The effective volume of a circular film in bulge test was determined from a FEM model enabling future comparison of fracture strength data between different techniques.

Tailoring the Two Dimensional Electron Gas at Polar ABO3/SrTiO3 Interfaces for Oxide Electronics.

PubMed

Li, Changjian; Liu, Zhiqi; Lü, Weiming; Wang, Xiao Renshaw; Annadi, Anil; Huang, Zhen; Zeng, Shengwei; Ariando; Venkatesan, T

2015-08-26

The 2D electron gas at the polar/non-polar oxide interface has become an important platform for several novel oxide electronic devices. In this paper, the transport properties of a wide range of polar perovskite oxide ABO3/SrTiO3 (STO) interfaces, where ABO3 includes LaAlO3, PrAlO3, NdAlO3, NdGaO3 and LaGaO3 in both crystalline and amorphous forms, were investigated. A robust 4 unit cell (uc) critical thickness for metal insulator transition was observed for crystalline polar layer/STO interface while the critical thickness for amorphous ones was strongly dependent on the B site atom and its oxygen affinity. For the crystalline interfaces, a sharp transition to the metallic state (i.e. polarization catastrophe induced 2D electron gas only) occurs at a growth temperature of 515 °C which corresponds to a critical relative crystallinity of ~70 ± 10% of the LaAlO3 overlayer. This temperature is generally lower than the metal silicide formation temperature and thus offers a route to integrate oxide heterojunction based devices on silicon.

Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

NASA Astrophysics Data System (ADS)

Fan, Wei

To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers, compared with pure TiO2. A modified 3-element model was adopted to extract the true C-V behavior of the TiAlOx-based MOS capacitor. Extremely small equivalent oxide thickness (EOT) less than 0.5 nm with dielectric leakage 4˜5 magnitude lower than that for SiO2 has been achieved on TiAlOx layer as a result of its excellent dielectric properties.

Cobalt-based multilayers with ultrathin seedlayers for perpendicular magnetic recording media

NASA Astrophysics Data System (ADS)

Peng, Wenbin

With the rapid increase in areal density in longitudinal magnetic recording, it is widely believed that the superparamagnetic limit will soon be reached. Perpendicular magnetic recording is now being seriously considered to be a candidate for the replacement. Co/Pd and Co/Pt multilayers are promising candidates because of their high anisotropy, high coercivity, high remanent squareness, and high negative nucleation field. However, Co/Pd and Co/Pt multilayers usually require thick seed layers to promote perpendicular anisotropies, which leads to large "spacing loss". In this work, different seed layers were studied and it showed that an amorphous indium tin oxide (ITO) seed layer as thin as 2nm could promote good perpendicular anisotropy. The processing parameters for Co-based multilayers such as deposition pressure, temperature, individual layer thickness, and number of bilayers were optimized to obtain better interfaces, higher coercivity, and higher anisotropies. Boron was added as dopants into Co layers to obtain better intergranular segregation and reduce the grain growth during the thin film deposition. The substrates were heated to promote the migration of boron atoms. It was proved that the addition of boron has successfully reduced the magnetic domain sizes as well as the media noise. Spin stand test showed that the CoB/Pd multilayers with 2nm ITO seed layer and 6mum thick NiFe soft underlayers deposited at 230°C gave a D50 of 340 kfci for differentiated output signals and an areal density of 11 Gb/in2 at a bit-error-rate of 10 -7. Given narrower heads, better soft underlayer, and lower flying height, the media can reach a much higher recording density.

Selective Oxidation of Amorphous Carbon Layers without Damaging Embedded Single Wall Carbon Nanotube Bundles

NASA Astrophysics Data System (ADS)

Choi, Young Chul; Lim, Seong Chu

2013-11-01

Single wall carbon nanotubes (SWCNTs) were synthesized by arc discharge, and then purified by selective oxidation of amorphous carbon layers that were found to encase SWCNT bundles and catalyst metal particles. In order to remove selectively the amorphous carbon layers with SWCNTs being intact, we have systematically investigated the thermal treatment conditions; firstly, setting the temperature by measuring the activation energies of SWCNTs and amorphous carbon layers, and then, secondly, finding the optimal process time. As a consequence, the optimal temperature and time for the thermal treatment was found to be 460 °C and 20 min, respectively. The complete elimination of surrounding amorphous carbon layers makes it possible to efficiently disperse the SWCNT bundles, resulting in high absorbance of SWCNT-ink. The SWCNTs which were thermal-treated at optimized temperature (460 °C) and duration (20 min) showed much better crystallinity, dispersibility, and transparent conducting properties, compared with as-synthesized and the nanotubes thermal-treated at different experimental conditions.

Microfabricated Amorphous Silicon Nanopillars on an Ultrasmooth 500-nm-thick Titanium Adhesion Layer

DTIC Science & Technology

2012-09-01

After Ti deposition, the wafers were pretreated with 10 ml of liquid hexamethyldisilazane ( HMDS ) to promote adhesion by photoresist. The HMDS was...film with a high flux of Ti atoms and shows large grains and a rough surface. In figure 2b, some residue can be seen near the 1000-nm pillars on the...closely to the SEM image shown in appendix B, which has a measured angle near 51°. In the future, a more vertical sidewall is likely to be desired

Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Hugh; Todorov, Stan; Colombeau, Benjamin

2012-11-06

We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channelmore » rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Oriented graphite layer formation in Ti/C and TiC/C multilayers deposited by high current pulsed cathodic arc

DOE Office of Scientific and Technical Information (OSTI.GOV)

Persson, P. O. A.; Ryves, L.; Tucker, M. D.

2008-10-01

Ti/C and TiC/C multilayers with periods ranging from 2 to 18 nm were grown by filtered high current pulsed cathodic arc. The growth was monitored in situ by ellipsometry and cantilever stress measurements. The ellipsometry results reveal that the optical properties of the carbon vary as a function of thickness. Correspondingly, the stress in each carbon layer as measured in situ exhibits two well defined values: initially the stress is low and then takes on a higher value for the remainder of the layer. Transmission electron microscopy shows that the initial growth of carbon on Ti or TiC layer ismore » oriented with graphitic basal planes aligned parallel to the interface. After 2-4 nm of growth, the graphitic structure transforms to amorphous carbon. Electron energy loss spectroscopy shows that the carbon layer simultaneously undergoes a transition from sp{sup 2} rich to sp{sup 3} rich material.« less

GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating.

PubMed

Shindo, Takahiko; Okumura, Tadashi; Ito, Hitomi; Koguchi, Takayuki; Takahashi, Daisuke; Atsumi, Yuki; Kang, Joonhyun; Osabe, Ryo; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa

2011-01-31

We fabricated a novel lateral-current-injection-type distributed feedback (DFB) laser with amorphous-Si (a-Si) surface grating as a step to realize membrane lasers. This laser consists of a thin GaInAsP core layer grown on a semi-insulating InP substrate and a 30-nm-thick a-Si surface layer for DFB grating. Under a room-temperature continuous-wave condition, a low threshold current of 7.0 mA and high efficiency of 43% from the front facet were obtained for a 2.0-μm stripe width and 300-μm cavity length. A small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA.

Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers.

PubMed

Wei, Chun-You; Lin, Chu-Hsuan; Hsiao, Hao-Tse; Yang, Po-Chuan; Wang, Chih-Ming; Pan, Yen-Chih

2013-11-22

Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.

Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Chowdhury, Md Delwar Hossain; Migliorato, Piero; Jang, Jin

2010-10-01

The effect of exposure to ultraviolet radiation on the characteristics of amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) fabricated by sputtering is investigated. After illumination with 1.5 mW cm-2 of 365 nm radiation, in the absence of any bias stress, a persistent negative shift in the characteristics is observed in the dark. The magnitude of the shift increases with exposure time, saturating after about 10 min. Under these conditions the subthreshold exhibits a rigid shift of around 3.6 V and 7.5 V for TFTs with an active layer thickness of 20 nm and 50 nm, respectively. The shift in the dark increases (decreases) when a negative (positive) bias stress is applied under illumination. The instability behavior caused by exposure to light, in the absence of any bias stress, can be explained on the basis of ionization of neutral oxygen vacancies.

Ion irradiation damage in ilmenite at 100 K

USGS Publications Warehouse

Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.; Nord, G.L.

1997-01-01

A natural single crystal of ilmenite (FeTiO3) was irradiated at 100 K with 200 keV Ar2+. Rutherford backscattering spectroscopy and ion channeling with 2 MeV He+ ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 ?? 1015 Ar2+/cm2, considerable near-surface He+ ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 nm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO3) and spinel (MgAl2O4) to explore factors that may influence radiation damage response in oxides.

Amorphous semiconductor solar cell

DOEpatents

Dalal, Vikram L.

1981-01-01

A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

Chemical structure of interfaces

NASA Technical Reports Server (NTRS)

Grunthaner, F. J.

1985-01-01

The interfacial structure of silicon/dielectric and silicon/metal systems is particularly amenable to analysis using a combination of surface spectroscopies together with a variety of chemical structures of Si/SiO2, Si/SiO2Si3N4, Si/Si2N2O, Si/SiO2/Al, and Si/Native Oxide interfaces using high resolution (0.350 eV FWHM) X ray photoelectron spectroscopy. The general structure of these dielectric interfaces entails a monolayer chemical transition layer at the Si/dielectric boundary. Amorphous Si substrates show a wide variety of hydrogenated Si and Si(OH) sub x states that are not observed in thermal oxidation of single crystal material. Extended SiO2 layers greater than 8 A in thickness are shown to be stoichiometric SiO2, but to exhibit a wide variety of local network structures. In the nitrogen containing systems, an approach to stoichiometric oxynitride compounds with interesting impurity and electron trapping properties are seen. In native oxides, substantial topographical nonuniformity in oxide thickness and composition are found. Analysis of metal/oxide interfacial layers is accomplished by analytical removal of the Si substrate by UHV XeF2 dry etching methods.

Optical properties of amorphous Ba0.7Sr0.3TiO3 thin films obtained by metal organic decomposition technique

NASA Astrophysics Data System (ADS)

Qiu, Fei; Xu, Zhimou

2009-08-01

In this study, the amorphous Ba0.7Sr0.3TiO3 (BST0.7) thin films were grown onto fused quartz and silicon substrates at low temperature by using a metal organic decomposition (MOD)-spin-coating procedure. The optical transmittance spectrum of amorphous BST0.7 thin films on fused quartz substrates has been recorded in the wavelength range 190~900 nm. The films were highly transparent for wavelengths longer than 330 nm; the transmission drops rapidly at 330 nm, and the cutoff wavelength occurs at about 260 nm. In addition, we also report the amorphous BST0.7 thin film groove-buried type waveguides with 90° bent structure fabricated on Si substrates with 1.65 μm thick SiO2 thermal oxide layer. The design, fabrication and optical losses of amorphous BST0.7 optical waveguides were presented. The amorphous BST0.7 thin films were grown onto the SiO2/Si substrates by using a metal organic decomposition (MOD)-spin-coating procedure. The optical propagation losses were about 12.8 and 9.4 dB/cm respectively for the 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. The 90° bent structures with a small curvature of micrometers were designed on the basis of a double corner mirror structure. The bend losses were about 1.2 and 0.9 dB respectively for 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. It is expected for amorphous BST0.7 thin films to be used not only in the passive optical interconnection in monolithic OEICs but also in active waveguide devices on the Si chip.

Temperature Dependence of the Resonant Magnetoelectric Effect in Layered Heterostructures

PubMed Central

Burdin, Dmitrii A.; Ekonomov, Nikolai A.; Chashin, Dmitrii V.; Fetisov, Leonid Y.; Fetisov, Yuri K.

2017-01-01

The dependence of the resonant direct magnetoelectric effect on temperature is studied experimentally in planar composite structures. Samples of rectangular shapes with dimensions of 5 mm × 20 mm employed ferromagnetic layers of either an amorphous (metallic glass) alloy or nickel with a thickness of 20–200 μm and piezoelectric layers of single crystalline langatate material or lead zirconate titanate piezoelectric ceramics with a thickness of 500 μm. The temperature of the samples was varied in a range between 120 and 390 K by blowing a gaseous nitrogen stream around them. It is shown that the effective characteristics of the magnetoelectric effect—such as the mechanical resonance frequency fr, the quality factor Q and the magnitude of the magnetoelectric coefficient αE at the resonance frequency—are contingent on temperature. The interrelations between the temperature changes of the characteristics of the magnetoelectric effect and the temperature variations of the following material parameters—Young’s modulus Y, the acoustic quality factor of individual layers, the dielectric constant ε, the piezoelectric modulus d of the piezoelectric layer as well as the piezomagnetic coefficients λ(n) of the ferromagnetic layer—are established. The effect of temperature on the characteristics of the nonlinear magnetoelectric effect is observed for the first time. The results can be useful for designing magnetoelectric heterostructures with specified temperature characteristics, in particular, for the development of thermally stabilized magnetoelectric devices. PMID:29035312

Investigations into the structure of PEO-layers for understanding of layer formation

NASA Astrophysics Data System (ADS)

Friedemann, A. E. R.; Thiel, K.; Haßlinger, U.; Ritter, M.; Gesing, Th. M.; Plagemann, P.

2018-06-01

Plasma electrolytic oxidation (PEO) is a type of high-voltage anodic oxidation process capable of producing a thick oxide layer with a wide variety of structural and chemical properties influenced by the electrolytic system. This process enables the combined adjustment of various characteristics, i.e. the morphology and chemical composition. The procedure facilitates the possibility of generating an individual structure as well as forming a crystalline surface in a single step. A highly porous surface with a high crystalline content consisting of titanium dioxide phases is ensured through the process of plasma electrolytic oxidizing pure titanium. In the present study plasma electrolytic oxidized TiO2-layers were investigated regarding their crystallinity through the layer thickness. The layers were prepared with a high applied voltage of 280 V to obtain a PEO-layer with highly crystalline anatase and rutile amounts. Raman spectroscopy and electron backscatter diffraction (EBSD) were selected to clarify the structure of the oxide layer with regard to its crystallinity and phase composition. The composition of the TiO2-phases is more or less irregularly distributed as a result of the higher energy input on the uppermost side of the layer. Scanning transmission electron microscopy (STEM) provided a deeper understanding of the structure and the effects of plasma discharges on the layer. It was observed that the plasma discharges have a strong influence on crystallite formation on top of the oxide layer and also at the boundary layer to the titanium substrate. Therefore, small crystallites of TiO2 could be detected in these regions. In addition, it was shown that amorphous TiO2 phases are formed around the characteristic pore structures, which allows the conclusion to be drawn that a rapid cooling from the gas phase had to take place in these areas.

SiO2-coated LiNi0.915Co0.075Al0.01O2 cathode material for rechargeable Li-ion batteries.

PubMed

Zhou, Pengfei; Zhang, Zhen; Meng, Huanju; Lu, Yanying; Cao, Jun; Cheng, Fangyi; Tao, Zhanliang; Chen, Jun

2016-11-24

We reported a one-step dry coating of amorphous SiO 2 on spherical Ni-rich layered LiNi 0.915 Co 0.075 Al 0.01 O 2 (NCA) cathode materials. Combined characterization of XRD, EDS mapping, and TEM indicates that a SiO 2 layer with an average thickness of ∼50 nm was uniformly coated on the surface of NCA microspheres, without inducing any change of the phase structure and morphology. Electrochemical tests show that the 0.2 wt% SiO 2 -coated NCA material exhibits enhanced cyclability and rate properties, combining with better thermal stability compared with those of pristine NCA. For example, 0.2 wt% SiO 2 -coated NCA delivers a high specific capacity of 181.3 mA h g -1 with a capacity retention of 90.7% after 50 cycles at 1 C rate and 25 °C. Moreover, the capacity retention of this composite at 60 °C is 12.5% higher than that of pristine NCA at 1 C rate after 50 cycles. The effects of SiO 2 coating on the electrochemical performance of NCA are investigated by EIS, CV, and DSC tests, the improved performance is attributed to the surface coating layer of amorphous SiO 2 , which effectively suppresses side reactions between NCA and electrolytes, decreases the SEI layer resistance, and retards the growth of charge-transfer resistance, thus enhancing structural and cycling stability of NCA.

Molecular dynamic simulation study of plasma etching L10 FePt media in embedded mask patterning (EMP) process

NASA Astrophysics Data System (ADS)

Zhu, Jianxin; Quarterman, P.; Wang, Jian-Ping

2017-05-01

Plasma etching process of single-crystal L10-FePt media [H. Wang et al., Appl. Phys. Lett. 102(5) (2013)] is studied using molecular dynamic simulation. Embedded-Atom Method [M. S. Daw and M. I. Baskes, Phy. Rev. B 29, 6443 (1984); X. W. Zhou, R. A. Johnson and H. N. G. Wadley, Phy. Rev. B 69, 144113 (2004)] is used to calculate the interatomic potential within atoms in FePt alloy, and ZBL potential [J.F. Ziegler, J. P. Biersack and U. Littmark, "The Stopping and Range of Ions in Matter," Volume 1, Pergamon,1985] in comparison with conventional Lennard-Jones "12-6" potential is applied to interactions between etching gas ions and metal atoms. It is shown the post-etch structure defects can include amorphized surface layer and lattice interstitial point defects that caused by etchant ions passed through the surface layer. We show that the amorphized or damaged FePt lattice surface layer (or "magnetic dead-layer") thickness after etching increases with ion energy for Ar ion impacts, but significantly small for He ions at up to 250eV ion energy. However, we showed that He sputtering creates more interstitial defects at lower energy levels and defects are deeper below the surface compared to Ar sputtering. We also calculate the interstitial defect level and depth as dependence on ion energy for both Ar and He ions. Media magnetic property loss due to these defects is also discussed.

First-Principles Study on the Thermal Stability of LiNiO2 Materials Coated by Amorphous Al2O3 with Atomic Layer Thickness.

PubMed

Kang, Joonhee; Han, Byungchan

2015-06-03

Using first-principles calculations, we study how to enhance thermal stability of high Ni compositional cathodes in Li-ion battery application. Using the archetype material LiNiO2 (LNO), we identify that ultrathin coating of Al2O3 (0001) on LNO(012) surface, which is the Li de-/intercalation channel, substantially improves the instability problem. Density functional theory calculations indicate that the Al2O3 deposits show phase transition from the corundum-type crystalline (c-Al2O3) to amorphous (a-Al2O3) structures as the number of coating layers reaches three. Ab initio molecular dynamic simulations on the LNO(012) surface coated by a-Al2O3 (about 0.88 nm) with three atomic layers oxygen gas evolution is strongly suppressed at T=400 K. We find that the underlying mechanism is the strong contacting force at the interface between LNO(012) and Al2O3 deposits, which, in turn, originated from highly ionic chemical bonding of Al and O at the interface. Furthermore, we identify that thermodynamic stability of the a-Al2O3 is even more enhanced with Li in the layer, implying that the protection for the LNO(012) surface by the coating layer is meaningful over the charging process. Our approach contributes to the design of innovative cathode materials with not only high-energy capacity but also long-term thermal and electrochemical stability applicable for a variety of electrochemical energy devices including Li-ion batteries.

Influences of ultrathin amorphous buffer layers on GaAs/Si grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Hu, Haiyang; Wang, Jun; Cheng, Zhuo; Yang, Zeyuan; Yin, Haiying; Fan, Yibing; Ma, Xing; Huang, Yongqing; Ren, Xiaomin

2018-04-01

In this work, a technique for the growth of GaAs epilayers on Si, combining an ultrathin amorphous Si buffer layer and a three-step growth method, has been developed to achieve high crystalline quality for monolithic integration. The influences of the combined technique for the crystalline quality of GaAs on Si are researched in this article. The crystalline quality of GaAs epilayer on Si with the combined technique is investigated by scanning electron microscopy, double crystal X-ray diffraction (DCXRD), photoluminescence, and transmission electron microscopy measurements. By means of this technique, a 1.8-µm-thick high-quality GaAs/Si epilayer was grown by metal-organic chemical vapor deposition. The full-width at half-maximum of the DCXRD rocking curve in the (400) reflection obtained from the GaAs/Si epilayers is about 163 arcsec. Compared with only using three-step growth method, the current technique reduces etch pit density from 3 × 106 cm-2 to 1.5 × 105 cm-2. The results demonstrate that the combined technique is an effective approach for reducing dislocation density in GaAs epilayers on Si.

Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces

DOEpatents

Weber, Michael F.

1991-10-08

A method for preventing shorts and shunts in solar cells having in order, an insulating substrate, a conductive metal layer on the substrate, an amorphous silicon layer and a transparent conductive layer. The method includes anodic etching of exposed portions of the metal layer after deposition of the amorphous silicon and prior to depositing the transparent conductive layer.

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Thickness dependence of optical properties of amorphous indium oxide thin films deposited by reactive evaporation

NASA Astrophysics Data System (ADS)

Uluta, K.; Deer, D.; Skarlatos, Y.

2006-08-01

The electrical conductivity and absorption coefficient of amorphous indium oxide thin films, thermally evaporated on glass substrates at room temperature, were evaluated. For direct transitions the variation of the optical band gap with thickness was determined and this variation was supposed to appear due to the variation of localized gap states, whereas the variation of conductivity with thickness was supposed to be due to the variation of carrier concentration. We attribute the variation of absorption coefficient with thickness to the variation of optical band gap energy rather than optical interference.

SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

NASA Astrophysics Data System (ADS)

Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

2017-08-01

In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

Wollastonite Carbonation in Water-Bearing Supercritical CO2: Effects of Particle Size.

PubMed

Min, Yujia; Li, Qingyun; Voltolini, Marco; Kneafsey, Timothy; Jun, Young-Shin

2017-11-07

The performance of geologic CO 2 sequestration (GCS) can be affected by CO 2 mineralization and changes in the permeability of geologic formations resulting from interactions between water-bearing supercritical CO 2 (scCO 2 ) and silicates in reservoir rocks. However, without an understanding of the size effects, the findings in previous studies using nanometer- or micrometer-size particles cannot be applied to the bulk rock in field sites. In this study, we report the effects of particle sizes on the carbonation of wollastonite (CaSiO 3 ) at 60 °C and 100 bar in water-bearing scCO 2 . After normalization by the surface area, the thickness of the reacted wollastonite layer on the surfaces was independent of particle sizes. After 20 h, the reaction was not controlled by the kinetics of surface reactions but by the diffusion of water-bearing scCO 2 across the product layer on wollastonite surfaces. Among the products of reaction, amorphous silica, rather than calcite, covered the wollastonite surface and acted as a diffusion barrier to water-bearing scCO 2 . The product layer was not highly porous, with a specific surface area 10 times smaller than that of the altered amorphous silica formed at the wollastonite surface in aqueous solution. These findings can help us evaluate the impacts of mineral carbonation in water-bearing scCO 2 .

Effects of B{sub 18}H{sub x}{sup +} and B{sub 18}H{sub x} dimer ion implantations on crystallinity and retained B dose in silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawasaki, Yoji; Shibahara, Kentaro; Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527

2012-01-15

The effects of B{sub 18}H{sub x}{sup +} and B{sub 18}H{sub x} dimer ion (B{sub 36}H{sub y}{sup +}) implantations on Si crystallinity and the retained B dose in Si were investigated using B{sub 18}H{sub x} bombardment and compared with the effects of B{sup +} implantation. Crystallinity was estimated for the implantation dose using molecular dynamic simulations (MDSs) and was quantified using the optical thickness obtained from spectroscopic ellipsometry. The authors focused on the crystallinity at a low B dose and compared the amorphized zones predicted by MDS for B{sub 18}H{sub x}{sup +} implantation with those measured using transmission electron microscopy; themore » predicted and measured results were in reasonable agreement. The authors then used their understanding of B{sub 18}H{sub x} bombardment to discuss the process for the generation of larger amorphized zones and thicker amorphized layers, as observed in B{sub 36}H{sub y}{sup +} implantation. The retained B dose and the sputtering were examined with secondary ion mass spectroscopy, focusing on a comparison of the retained B and the sputtering of Si and SiO{sub 2} surfaces. The retained B dose was lower for B{sub 18}H{sub x}{sup +} and B{sub 36}H{sub y}{sup +} implantations, with and without surface SiO{sub 2}, than for B{sup +} implantation, although no sputtering was observed. The reduction of the retained B dose was more severe in the samples with SiO{sub 2}. The origin of the differences between Si and SiO{sub 2} surfaces was considered to be Si melting; this was predicted by the MDSs, and observed indirectly as flat B profiles in the Si region. To examine the effects of both crystallinity and retained B dose on the electrical characteristics, the sheet resistance (R{sub S}) was measured. The R{sub S} for B{sub 18}H{sub x}{sup +} implantation was lower than that for B{sup +} implantation at both B doses studied. Additionally, the B{sub 36}H{sub y}{sup +} implantation under conditions that produced a thicker amorphized layer led to lower R{sub S} than B{sub 18}H{sub x}{sup +} implantation. These results indicate that both the amorphized layer and the amorphized zone contribute to the activation of more B atoms.« less

Structure and nano-mechanical characteristics of surface oxide layers on a metallic glass.

PubMed

Caron, A; Qin, C L; Gu, L; González, S; Shluger, A; Fecht, H-J; Louzguine-Luzgin, D V; Inoue, A

2011-03-04

Owing to their low elastic moduli, high specific strength and excellent processing characteristics in the undercooled liquid state, metallic glasses are promising materials for applications in micromechanical systems. With miniaturization of metallic mechanical components down to the micrometer scale, the importance of a native oxide layer on a glass surface is increasing. In this work we use TEM and XPS to characterize the structure and properties of the native oxide layer grown on Ni(62)Nb(38) metallic glass and their evolution after annealing in air. The thickness of the oxide layer almost doubled after annealing. In both cases the oxide layer is amorphous and consists predominantly of Nb oxide. We investigate the friction behavior at low loads and in ambient conditions (i.e. at T = 295 K and 60% air humidity) of both as-cast and annealed samples by friction force microscopy. After annealing the friction coefficient is found to have significantly increased. We attribute this effect to the increase of the mechanical stability of the oxide layer upon annealing.

X-ray radiation generated by a beam of relativistic electrons in composite structure

NASA Astrophysics Data System (ADS)

Blazhevich, S. V.; Noskov, A. V.

2018-04-01

The dynamic theory of coherent X-ray radiation generated by a beam of relativistic electrons in the three-layer structure consisting of an amorphous layer, a vacuum (air) layer and a single crystal has been developed. The phenomenon description is based on two main radiation mechanisms, namely, parametric X-ray radiation (PXR) and diffracted transition radiation (DTR). The possibility to increase the spectral-angular density of DTR under the condition of constructive interference of the transition radiation waves from different boundaries of such a structure has been demonstrated. It is shown that little changes in the layers thicknesses should not cause a considerable change in the interference picture, for example, the transition of constructive interference into destructive one. It means that in the considered process the conditions of constructive interference are enough stable to use them for increasing the intensity of X-ray source that can be created based on the interaction of relativistic electrons with such a structure.

Understanding the corrosion behavior of amorphous multiple-layer carbon coating

NASA Astrophysics Data System (ADS)

Guo, Lei; Gao, Ying; Xu, Yongxian; Zhang, Renhui; Madkour, Loutfy H.; Yang, Yingchang

2018-04-01

The corrosion behavior of multiple-layer carbon coating that contained hydrogen, fluorine and silicon, possessed dual amorphous structure with sutured interfaces was investigated using potentiodynamic polarization and electrochemical impedances (ETS) in 3.5 wt.% NaCl solution. The coating exhibited good resistance to corrosion in 3.5 wt.% NaCl solution due to its amorphous and dense structures.

Low loss poly-silicon for high performance capacitive silicon modulators.

PubMed

Douix, Maurin; Baudot, Charles; Marris-Morini, Delphine; Valéry, Alexia; Fowler, Daivid; Acosta-Alba, Pablo; Kerdilès, Sébastien; Euvrard, Catherine; Blanc, Romuald; Beneyton, Rémi; Souhaité, Aurélie; Crémer, Sébastien; Vulliet, Nathalie; Vivien, Laurent; Boeuf, Frédéric

2018-03-05

Optical properties of poly-silicon material are investigated to be integrated in new silicon photonics devices, such as capacitive modulators. Test structure fabrication is done on 300 mm wafer using LPCVD deposition: 300 nm thick amorphous silicon layers are deposited on thermal oxide, followed by solid phase crystallization anneal. Rib waveguides are fabricated and optical propagation losses measured at 1.31 µm. Physical analysis (TEM ASTAR, AFM and SIMS) are used to assess the origin of losses. Optimal deposition and annealing conditions have been defined, resulting in 400 nm-wide rib waveguides with only 9.2-10 dB/cm losses.

Transport properties of Sb doped Si nanowires

NASA Astrophysics Data System (ADS)

Nukala, Prathyusha; Sapkota, Gopal; Gali, Pradeep; Usha, Philipose

2011-10-01

n-type Si nanowires were synthesized at ambient pressure using SiCl4 as Si source and Sb source as the dopant. Sb doping of 3-4 wt % was achieved through a post growth diffusion technique. The nanowires were found to have an amorphous oxide shell that developed post-growth; the thickness of the shell is estimated to be about 3-4 nm. The composition of the amorphous shell covering the crystalline Si core was determined by Raman spectroscopy, with evidence that the shell was an amorphous oxide layer. Optical characterization of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell covering the Si nanowire core. Etching of the oxide shell was found to decrease the intensity of this green emission. A single undoped Si nanowire contacted in an FET type configuration was found to be p-type with channel mobility of 20 cm^2V-1S-1. Sb doped Si nanowires exhibited n-type behavior, compensating for the holes in the undoped nanowire. The doped nanowires had carrier mobility and concentration of 160 cm^2V-1S-1 and 9.6 x 10^18cm-3 respectively.

Neon ion beam induced pattern formation on amorphous carbon surfaces

NASA Astrophysics Data System (ADS)

Bobes, Omar; Hofsäss, Hans; Zhang, Kun

2018-02-01

We investigate the ripple pattern formation on amorphous carbon surfaces at room temperature during low energy Ne ion irradiation as a function of the ion incidence angle. Monte Carlo simulations of the curvature coefficients applied to the Bradley-Harper and Cater-Vishnyakov models, including the recent extensions by Harrison-Bradley and Hofsäss predict that pattern formation on amorphous carbon thin films should be possible for low energy Ne ions from 250 eV up to 1500 eV. Moreover, simulations are able to explain the absence of pattern formation in certain cases. Our experimental results are compared with prediction using current linear theoretical models and applying the crater function formalism, as well as Monte Carlo simulations to calculate curvature coefficients using the SDTrimSP program. Calculations indicate that no patterns should be generated up to 45° incidence angle if the dynamic behavior of the thickness of the ion irradiated layer introduced by Hofsäss is taken into account, while pattern formation most pronounced from 50° for ion energy between 250 eV and 1500 eV, which are in good agreement with our experimental data.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, K.H.

1998-06-30

A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, Kurt H.

1998-01-01

A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

Structure and Barrier Properties of Multinanolayered Biodegradable PLA/PBSA Films: Confinement Effect via Forced Assembly Coextrusion.

PubMed

Messin, Tiphaine; Follain, Nadège; Guinault, Alain; Sollogoub, Cyrille; Gaucher, Valérie; Delpouve, Nicolas; Marais, Stéphane

2017-08-30

Multilayer coextrusion processing was applied to produce 2049-layer film of poly(butylene succinate-co-butylene adipate) (PBSA) confined against poly(lactic acid) (PLA) using forced assembly, where the PBSA layer thickness was about 60 nm. This unique technology allowed to process semicrystalline PBSA as confined polymer and amorphous PLA as confining polymer in a continuous manner. The continuity of PBSA layers within the 80/20 wt % PLA/PBSA layered films was clearly evidenced by atomic force microscopy (AFM). Similar thermal events to the reference films were revealed by thermal studies; indicating no diffusion of polymers during the melt-processing. Mechanical properties were measured for the multilayer film and the obtained results were those expected considering the fraction of each polymer, revealing the absence of delamination in the PLA/PBSA multinanolayer film. The confinement effect induced by PLA led to a slight orientation of the crystals, an increase of the rigid amorphous fraction (RAF) in PBSA with a densification of this fraction without changing film crystallinity. These structural changes allowed to strongly improve the water vapor and gas barrier properties of the PBSA layer into the multilayer film up to two decades in the case of CO 2 gas. By confining the PBSA structure in very thin and continuous layers, it was then possible to improve the barrier performances of a biodegradable system and the resulting barrier properties were successfully correlated to the effect of confinement on the microstructure and the chain segment mobility of the amorphous phase. Such investigation on these multinanolayers of PLA/PBSA with the aim of evidencing relationships between microstructure implying RAF and barrier performances has never been performed yet. Besides, gas and water permeation results have shown that the barrier improvement obtained from the multilayer was mainly due to the reduction of solubility linked to the reduction of the free volume while the tortuosity effect, as usually expected, was not really observed. This work brings new insights in the field of physicochemical behaviors of new multilayer films made of biodegradable polyesters but also in interfacial processes due to the confinement effect induced in these multinanolayer structures obtained by the forced assembly coextrusion. This original coextrusion process was a very advantageous technique to produce eco-friendly materials with functional properties without the help of tie layer, additives, solvents, surface treatments, or inorganic fillers.

Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200 °C

PubMed Central

Sadeghi-Tohidi, Farzad; Samet, David; Graham, Samuel; Pierron, Olivier N

2014-01-01

The fatigue properties of ultrathin protective coatings on silicon thin films were investigated. The cohesive and delamination fatigue properties of 22 nm-thick atomic-layered-deposited (ALD) titania were characterized and compared to that of 25 nm-thick alumina. Both coatings were deposited at 200 °C. The fatigue rates are comparable at 30 °C, 50% relative humidity (RH) while they are one order of magnitude larger for alumina compared to titania at 80 °C, 90% RH. The improved fatigue performance is believed to be related to the improved stability of the ALD titania coating with water compared to ALD alumina, which may in part be related to the fact that ALD titania is crystalline, while ALD alumina is amorphous. Static fatigue crack nucleation and propagation was not observed. The underlying fatigue mechanism is different from previously documented mechanisms, such as stress corrosion cracking, and appears to result from the presence of compressive stresses and a rough coating–substrate interface. PMID:27877645

Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

NASA Astrophysics Data System (ADS)

Rahmouni, M.; Datta, A.; Chatterjee, P.; Damon-Lacoste, J.; Ballif, C.; Roca i Cabarrocas, P.

2010-03-01

Heterojunction with intrinsic thin layer or "HIT" solar cells are considered favorable for large-scale manufacturing of solar modules, as they combine the high efficiency of crystalline silicon (c-Si) solar cells, with the low cost of amorphous silicon technology. In this article, based on experimental data published by Sanyo, we simulate the performance of a series of HIT cells on N-type crystalline silicon substrates with hydrogenated amorphous silicon (a-Si:H) emitter layers, to gain insight into carrier transport and the general functioning of these devices. Both single and double HIT structures are modeled, beginning with the initial Sanyo cells having low open circuit voltages but high fill factors, right up to double HIT cells exhibiting record values for both parameters. The one-dimensional numerical modeling program "Amorphous Semiconductor Device Modeling Program" has been used for this purpose. We show that the simulations can correctly reproduce the electrical characteristics and temperature dependence for a set of devices with varying I-layer thickness. Under standard AM1.5 illumination, we show that the transport is dominated by the diffusion mechanism, similar to conventional P/N homojunction solar cells, and tunneling is not required to describe the performance of state-of-the art devices. Also modeling has been used to study the sensitivity of N-c-Si HIT solar cell performance to various parameters. We find that the solar cell output is particularly sensitive to the defect states on the surface of the c-Si wafer facing the emitter, to the indium tin oxide/P-a-Si:H front contact barrier height and to the band gap and activation energy of the P-a-Si:H emitter, while the I-a-Si:H layer is necessary to achieve both high Voc and fill factor, as it passivates the defects on the surface of the c-Si wafer. Finally, we describe in detail for most parameters how they affect current transport and cell properties.

Thickness and composition of ultrathin SiO2 layers on Si

NASA Astrophysics Data System (ADS)

van der Marel, C.; Verheijen, M. A.; Tamminga, Y.; Pijnenburg, R. H. W.; Tombros, N.; Cubaynes, F.

2004-07-01

Ultrathin SiO2 layers are of importance for the semiconductor industry. One of the techniques that can be used to determine the chemical composition and thickness of this type of layers is x-ray photoelectron spectroscopy (XPS). As shown by Seah and Spencer [Surf. Interface Anal. 33, 640 (2002)], it is not trivial to characterize this type of layer by means of XPS in a reliable way. We have investigated a series of ultrathin layers of SiO2 on Si (in the range from 0.3 to 3 nm) using XPS. The samples were also analyzed by means of transmission electron microscopy (TEM), Rutherford backscattering (RBS), and ellipsometry. The thickness of the SiO2 layers (d) was determined from the XPS results using three different approaches: the ``standard'' equation (Seah and Spencer) for d, an overlayer-substrate model calculation, and the QUASES-Tougaard [Surf. Interface Anal. 26, 249 (1998), QUASES-Tougaard: Software package for Quantitative Analysis of Surfaces by Electron Spectroscopy, version 4.4 (2000); http://www.quases.com] method. Good agreement was obtained between the results of XPS analyses using the ``standard'' equation, the overlayer-substrate model calculation, and RBS results. The QUASES-Tougaard results were approximately 62% above the other XPS results. The optical values for the thickness were always slightly higher than the thickness according to XPS or RBS. Using the model calculation, these (relatively small) deviations from the optical results could be explained as being a consequence of surface contaminations with hydrocarbons. For a thickness above 2.5 nm, the TEM results were in good agreement with the results obtained from the other techniques (apart from QUASES-Tougaard). Below 2.5 nm, significant deviations were found between RBS, XPS, and optical data on the one hand and TEM results on the other hand; the deviations became larger as the thickness of the SiO2 decreased. This effect may be related to interface states of oxygen, which have been investigated [D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, and G. Timp, Nature (London) 399, 758 (1999); D. A. Muller and J. B. Neaton, Structure and Energetics of the Interface Between Si and Amorphous SiO2 in Fundamental Aspects of Silicon Oxidation, edited by Y. J. Chabal (Springer, Berlin, 2001), pp. 219-246.] by means of high-resolution electron energy loss spectroscopy measurements of the O K edge in ultrathin gate oxides of SiO2. .

Structural and chemical evolution of the CdS:O window layer during individual CdTe solar cell processing steps

DOE PAGES

Abbas, A.; Meysing, D. M.; Reese, M. O.; ...

2017-12-01

Oxygenated cadmium sulfide (CdS:O) is often used as the n-type window layer in high-performance CdTe heterojunction solar cells. The as-deposited layer prepared by reactive sputtering is XRD amorphous, with a bulk composition of CdS0.8O1.2. Recently it was shown that this layer undergoes significant transformation during device fabrication, but the roles of the individual high temperature processing steps was unclear. In this work high resolution transmission electron microscopy coupled to elemental analysis was used to understand the evolution of the heterojunction region through the individual high temperature fabrication steps of CdTe deposition, CdCl2 activation, and back contact activation. It is foundmore » that during CdTe deposition by close spaced sublimation at 600 degrees C the CdS:O film undergoes recrystallization, accompanied by a significant (~30%) reduction in thickness. It is observed that oxygen segregates during this step, forming a bi-layer morphology consisting of nanocrystalline CdS adjacent to the tin oxide contact and an oxygen-rich layer adjacent to the CdTe absorber. This bilayer structure is then lost during the 400 degrees C CdCl2 treatment where the film transforms into a heterogeneous structure with cadmium sulfate clusters distributed randomly throughout the window layer. The thickness of window layer remains essentially unchanged after CdCl2 treatment, but a ~25 nm graded interfacial layer between CdTe and the window region is formed. Finally, the rapid thermal processing step used to activate the back contact was found to have a negligible impact on the structure or composition of the heterojunction region.« less

Structural and chemical evolution of the CdS:O window layer during individual CdTe solar cell processing steps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abbas, A.; Meysing, D. M.; Reese, M. O.

Oxygenated cadmium sulfide (CdS:O) is often used as the n-type window layer in high-performance CdTe heterojunction solar cells. The as-deposited layer prepared by reactive sputtering is XRD amorphous, with a bulk composition of CdS0.8O1.2. Recently it was shown that this layer undergoes significant transformation during device fabrication, but the roles of the individual high temperature processing steps was unclear. In this work high resolution transmission electron microscopy coupled to elemental analysis was used to understand the evolution of the heterojunction region through the individual high temperature fabrication steps of CdTe deposition, CdCl2 activation, and back contact activation. It is foundmore » that during CdTe deposition by close spaced sublimation at 600 degrees C the CdS:O film undergoes recrystallization, accompanied by a significant (~30%) reduction in thickness. It is observed that oxygen segregates during this step, forming a bi-layer morphology consisting of nanocrystalline CdS adjacent to the tin oxide contact and an oxygen-rich layer adjacent to the CdTe absorber. This bilayer structure is then lost during the 400 degrees C CdCl2 treatment where the film transforms into a heterogeneous structure with cadmium sulfate clusters distributed randomly throughout the window layer. The thickness of window layer remains essentially unchanged after CdCl2 treatment, but a ~25 nm graded interfacial layer between CdTe and the window region is formed. Finally, the rapid thermal processing step used to activate the back contact was found to have a negligible impact on the structure or composition of the heterojunction region.« less

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

NASA Astrophysics Data System (ADS)

Spiga, S.; Rao, R.; Lamagna, L.; Wiemer, C.; Congedo, G.; Lamperti, A.; Molle, A.; Fanciulli, M.; Palma, F.; Irrera, F.

2012-07-01

Al-doped ZrO2 (Al-ZrO2) films deposited by atomic layer deposition onto silicon substrates and the interface with the TaN metal gate are investigated. In particular, structural properties of as-grown and annealed films in the 6-26 nm thickness range, as well as leakage and capacitive behavior of metal-oxide-semiconductor stacks are characterized. As-deposited Al-ZrO2 films in the mentioned thickness range are amorphous and crystallize in the ZrO2 cubic phase after thermal treatment at 900 °C. Correspondingly, the dielectric constant (k) value increases from 20 ± 1 to 27 ± 2. The Al-ZrO2 layers exhibit uniform composition through the film thickness and are thermally stable on Si, whereas chemical reactions take place at the TaN/Al-ZrO2 interface. A transient capacitance technique is adopted for monitoring charge trapping and flat band instability at short and long time scales. The role of traps nearby the TaN/Al-ZrO2 interface is discussed and compared with other metal/high-k oxide films. Further, analytical modeling of the flat band voltage shift with a power-law dependence on time allows extracting features of bulk traps close to the silicon/oxide interface, which exhibit energy levels in the 1.4-1.9 eV range above the valence band of the Al-ZrO2.

Investigations of Si Thin Films as Anode of Lithium-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Qingliu; Shi, Bing; Bareño, Javier

Amorphous silicon thin films having various thicknesses were investigated as a negative electrode material for lithium-ion batteries. Electrochemical characterization of the 20 nm thick thin silicon film revealed a very low first cycle Coulombic efficiency, which can be attributed to the silicon oxide layer formed on both the surface of the as-deposited Si thin film and the interface between the Si and the substrate. Among the investigated films, the 100 nm Si thin film demonstrated the best performance in terms of first cycle efficiency and cycle life. Observations from scanning electron microscopy demonstrated that the generation of cracks was inevitablemore » in the cycled Si thin films, even as the thickness of the film was as little as 20 nm, which was not predicted by previous modeling work. However, the cycling performance of the 20 and 100 nm silicon thin films was not detrimentally affected by these cracks. The poor capacity retention of the 1 mu m silicon thin film was attributed to the delamination.« less

Density change and viscous flow during structural relaxation of plasma-enhanced chemical-vapor-deposited silicon oxide films

NASA Astrophysics Data System (ADS)

Cao, Zhiqiang; Zhang, Xin

2004-10-01

The structural relaxation of plasma-enhanced chemical-vapor-deposited (PECVD) silane-based silicon oxide films during thermal cycling and annealing has been studied using wafer curvature measurements. These measurements, which determine stress in the amorphous silicon oxide films, are sensitive to both plastic deformation and density changes. A quantitative case study of such changes has been done based upon the experimental results. A microstructure-based mechanism elucidates seams as a source of density change and voids as a source of plastic deformation, accompanied by a viscous flow. This theory was then used to explain a series of experimental results that are related to thermal cycling as well as annealing of PECVD silicon oxide films including stress hysteresis generation and reduction and coefficient of thermal-expansion changes. In particular, the thickness effect was examined; PECVD silicon oxide films with a thickness varying from 1to40μm were studied, as certain demanding applications in microelectromechanical systems require such thick films serving as heat/electrical insulation layers.

Enamel-like apatite crown covering amorphous mineral in a crayfish mandible

PubMed Central

Bentov, Shmuel; Zaslansky, Paul; Al-Sawalmih, Ali; Masic, Admir; Fratzl, Peter; Sagi, Amir; Berman, Amir; Aichmayer, Barbara

2012-01-01

Carbonated hydroxyapatite is the mineral found in vertebrate bones and teeth, whereas invertebrates utilize calcium carbonate in their mineralized organs. In particular, stable amorphous calcium carbonate is found in many crustaceans. Here we report on an unusual, crystalline enamel-like apatite layer found in the mandibles of the arthropod Cherax quadricarinatus (freshwater crayfish). Despite their very different thermodynamic stabilities, amorphous calcium carbonate, amorphous calcium phosphate, calcite and fluorapatite coexist in well-defined functional layers in close proximity within the mandible. The softer amorphous minerals are found primarily in the bulk of the mandible whereas apatite, the harder and less soluble mineral, forms a wear-resistant, enamel-like coating of the molar tooth. Our findings suggest a unique case of convergent evolution, where similar functional challenges of mastication led to independent developments of structurally and mechanically similar, apatite-based layers in the teeth of genetically remote phyla: vertebrates and crustaceans. PMID:22588301

Directionally Aligned Amorphous Polymer Chains via Electrohydrodynamic-Jet Printing: Analysis of Morphology and Polymer Field-Effect Transistor Characteristics.

PubMed

Kim, Yebyeol; Bae, Jaehyun; Song, Hyun Woo; An, Tae Kyu; Kim, Se Hyun; Kim, Yun-Hi; Park, Chan Eon

2017-11-15

Electrohydrodynamic-jet (EHD-jet) printing provides an opportunity to directly assembled amorphous polymer chains in the printed pattern. Herein, an EHD-jet printed amorphous polymer was employed as the active layer for fabrication of organic field-effect transistors (OFETs). Under optimized conditions, the field-effect mobility (μ FET ) of the EHD-jet printed OFETs was 5 times higher than the highest μ FET observed in the spin-coated OFETs, and this improvement was achieved without the use of complex surface templating or additional pre- or post-deposition processing. As the chain alignment can be affected by the surface energy of the dielectric layer in EHD-jet printed OFETs, dielectric layers with varying wettability were examined. Near-edge X-ray absorption fine structure measurements were performed to compare the amorphous chain alignment in OFET active layers prepared by EHD-jet printing and spin coating.

Tellurium n-type doping of highly mismatched amorphous GaN 1-xAs x alloys in plasma-assisted molecular beam epitaxy

DOE PAGES

Novikov, S. V.; Ting, M.; Yu, K. M.; ...

2014-10-01

In this paper we report our study on n-type Te doping of amorphous GaN 1-xAs x layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN 1-xAs x layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN 1-xAs x layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN 1-xAs x layers hasmore » been determined.« less

Effect of nanoconfinement on the sputter yield in ultrathin polymeric films: Experiments and model

NASA Astrophysics Data System (ADS)

Cristaudo, Vanina; Poleunis, Claude; Delcorte, Arnaud

2018-06-01

This fundamental contribution on secondary ion mass spectrometry (SIMS) polymer depth-profiling by large argon clusters investigates the dependence of the sputter yield volume (Y) on the thickness (d) of ultrathin films as a function of the substrate nature, i.e. hard vs soft. For this purpose, thin films of polystyrene (PS) oligomers (∼4,000 amu) are spin-coated, respectively, onto silicon and poly (methyl methacrylate) supports and, then, bombarded by 10 keV Ar3000+ ions. The investigated thickness ranges from 15 to 230 nm. Additionally, the influence of the polymer molecular weight on Y(d) for PS thin films on Si is explored. The sputtering efficiency is found to be strongly dependent on the overlayer thickness, only in the case of the silicon substrate. A simple phenomenological model is proposed for the description of the thickness influence on the sputtering yield. Molecular dynamics (MD) simulations conducted on amorphous films of polyethylene-like oligomers of increasing thickness (from 2 to 20 nm), under comparable cluster bombardment conditions, predict a significant increase of the sputtering yield for ultrathin layers on hard substrates, induced by energy confinement in the polymer, and support our phenomenological model.

Interfacial exchange coupling and magnetization reversal in perpendicular [Co/Ni]N/TbCo composite structures.

PubMed

Tang, M H; Zhang, Zongzhi; Tian, S Y; Wang, J; Ma, B; Jin, Q Y

2015-06-15

Interfacial exchange coupling and magnetization reversal characteristics in the perpendicular heterostructures consisting of an amorphous ferrimagnetic (FI) TbxCo(100-x) alloy layer exchange-coupled with a ferromagnetic (FM) [Co/Ni]N multilayer have been investigated. As compared with pure TbxCo(100-x) alloy, the magnetization compensation composition of the heterostructures shift to a higher Tb content, implying Co/Ni also serves to compensate the Tb moment in TbCo layer. The net magnetization switching field Hc⊥ and interlayer interfacial coupling field Hex, are not only sensitive to the magnetization and thickness of the switched TbxCo(100-x) or [Co/Ni]N layer, but also to the perpendicular magnetic anisotropy strength of the pinning layer. By tuning the layer structure we achieve simultaneously both large Hc⊥ = 1.31 T and Hex = 2.19 T. These results, in addition to the fundamental interest, are important to understanding of the interfacial coupling interaction in the FM/FI heterostructures, which could offer the guiding of potential applications in heat-assisted magnetic recording or all-optical switching recording technique.

Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon.

PubMed

Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca I

2017-03-06

Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C.

Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon

PubMed Central

Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca i

2017-01-01

Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C. PMID:28262840

Femtosecond laser ablation of enamel

NASA Astrophysics Data System (ADS)

Le, Quang-Tri; Bertrand, Caroline; Vilar, Rui

2016-06-01

The surface topographical, compositional, and structural modifications induced in human enamel by femtosecond laser ablation is studied. The laser treatments were performed using a Yb:KYW chirped-pulse-regenerative amplification laser system (560 fs and 1030 nm) and fluences up to 14 J/cm2. The ablation surfaces were studied by scanning electron microscopy, grazing incidence x-ray diffraction, and micro-Raman spectroscopy. Regardless of the fluence, the ablation surfaces were covered by a layer of resolidified material, indicating that ablation is accompanied by melting of hydroxyapatite. This layer presented pores and exploded gas bubbles, created by the release of gaseous decomposition products of hydroxyapatite (CO2 and H2O) within the liquid phase. In the specimen treated with 1-kHz repetition frequency and 14 J/cm2, thickness of the resolidified material is in the range of 300 to 900 nm. The micro-Raman analysis revealed that the resolidified material contains amorphous calcium phosphate, while grazing incidence x-ray diffraction analysis allowed detecting traces of a calcium phosphate other than hydroxyapatite, probably β-tricalcium phosphate Ca3), at the surface of this specimen. The present results show that the ablation of enamel involves melting of enamel's hydroxyapatite, but the thickness of the altered layer is very small and thermal damage of the remaining material is negligible.

Comparative electrochemical analysis of crystalline and amorphous anodized iron oxide nanotube layers as negative electrode for LIB.

PubMed

Pervez, Syed Atif; Kim, Doohun; Farooq, Umer; Yaqub, Adnan; Choi, Jung-Hee; Lee, You-Jin; Doh, Chil-Hoon

2014-07-23

This work is a comparative study of the electrochemical performance of crystalline and amorphous anodic iron oxide nanotube layers. These nanotube layers were grown directly on top of an iron current collector with a vertical orientation via a simple one-step synthesis. The crystalline structures were obtained by heat treating the as-prepared (amorphous) iron oxide nanotube layers in ambient air environment. A detailed morphological and compositional characterization of the resultant materials was performed via transmission electron microscopy (TEM), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and Raman spectroscopy. The XRD patterns were further analyzed using Rietveld refinements to gain in-depth information on their quantitative phase and crystal structures after heat treatment. The results demonstrated that the crystalline iron oxide nanotube layers exhibit better electrochemical properties than the amorphous iron oxide nanotube layers when evaluated in terms of the areal capacity, rate capability, and cycling performance. Such an improved electrochemical response was attributed to the morphology and three-dimensional framework of the crystalline nanotube layers offering short, multidirectional transport lengths, which favor rapid Li(+) ions diffusivity and electron transport.

Li4SiO4-Based Artificial Passivation Thin Film for Improving Interfacial Stability of Li Metal Anodes.

PubMed

Kim, Ji Young; Kim, A-Young; Liu, Guicheng; Woo, Jae-Young; Kim, Hansung; Lee, Joong Kee

2018-03-14

An amorphous SiO 2 (a-SiO 2 ) thin film was developed as an artificial passivation layer to stabilize Li metal anodes during electrochemical reactions. The thin film was prepared using an electron cyclotron resonance-chemical vapor deposition apparatus. The obtained passivation layer has a hierarchical structure, which is composed of lithium silicide, lithiated silicon oxide, and a-SiO 2 . The thickness of the a-SiO 2 passivation layer could be varied by changing the processing time, whereas that of the lithium silicide and lithiated silicon oxide layers was almost constant. During cycling, the surface of the a-SiO 2 passivation layer is converted into lithium silicate (Li 4 SiO 4 ), and the portion of Li 4 SiO 4 depends on the thickness of a-SiO 2 . A minimum overpotential of 21.7 mV was observed at the Li metal electrode at a current density of 3 mA cm -2 with flat voltage profiles, when an a-SiO 2 passivation layer of 92.5 nm was used. The Li metal with this optimized thin passivation layer also showed the lowest charge-transfer resistance (3.948 Ω cm) and the highest Li ion diffusivity (7.06 × 10 -14 cm 2 s -1 ) after cycling in a Li-S battery. The existence of the Li 4 SiO 4 artificial passivation layer prevents the corrosion of Li metal by suppressing Li dendritic growth and improving the ionic conductivity, which contribute to the low charge-transfer resistance and high Li ion diffusivity of the electrode.

Interfacial phonon scattering and transmission loss in >1 μm thick silicon-on-insulator thin films

NASA Astrophysics Data System (ADS)

Jiang, Puqing; Lindsay, Lucas; Huang, Xi; Koh, Yee Kan

2018-05-01

Scattering of phonons at boundaries of a crystal (grains, surfaces, or solid/solid interfaces) is characterized by the phonon wavelength, the angle of incidence, and the interface roughness, as historically evaluated using a specularity parameter p formulated by Ziman [Electrons and Phonons (Clarendon Press, Oxford, 1960)]. This parameter was initially defined to determine the probability of a phonon specularly reflecting or diffusely scattering from the rough surface of a material. The validity of Ziman's theory as extended to solid/solid interfaces has not been previously validated. To better understand the interfacial scattering of phonons and to test the validity of Ziman's theory, we precisely measured the in-plane thermal conductivity of a series of Si films in silicon-on-insulator (SOI) wafers by time-domain thermoreflectance (TDTR) for a Si film thickness range of 1-10 μm and a temperature range of 100-300 K. The Si /SiO2 interface roughness was determined to be 0.11 ±0.04 nm using transmission electron microscopy (TEM). Furthermore, we compared our in-plane thermal conductivity measurements to theoretical calculations that combine first-principles phonon transport with Ziman's theory. Calculations using Ziman's specularity parameter significantly overestimate values from the TDTR measurements. We attribute this discrepancy to phonon transmission through the solid/solid interface into the substrate, which is not accounted for by Ziman's theory for surfaces. The phonons that are specularly transmitted into an amorphous layer will be sufficiently randomized by the time they come back to the crystalline Si layer, the effect of which is practically equivalent to a diffuse reflection at the interface. We derive a simple expression for the specularity parameter at solid/amorphous interfaces and achieve good agreement between calculations and measurement values.

ANSYS-Based Simulation and Optimization on Temperature Field of Amorphous Ingot Made by Water Quenching

NASA Astrophysics Data System (ADS)

Zhao, W.; Sun, Z.; Tang, Z.; Liaw, P. K.; Li, J.; Liu, R. P.; Li, Gong

2014-05-01

2D finite element analysis was conducted on the temperature field to create an amorphous ingot by vacuum water quenching. An optimized analysis document was then written by ANSYS parametric design language, and the optimal design modules of ANSYS were used to study the inside diameter and wall thickness of the quartz tube, as well as the water temperature. The microstructure and the phase structure of the amorphous ingot were evaluated by scanning electron microscopy and X-ray diffraction, respectively. Results show that during the cooling process, the thinner wall thickness, smaller diameter of the ingot, or lower temperature of the water environment can result in higher cooling rate at a given temperature. Besides, the gap between the different cooling rates induced by wall thickness or diameter of the ingot narrows down as the temperature decreases, and the gap between the different cooling rates induced by temperature of the water environment remains constant. The process parameters in creating an amorphous ingot, which is optimized by the finite element analysis on the temperature field, are reliable.

Different structural morphologies of the two surfaces in some Co-based amorphous ribbons

NASA Astrophysics Data System (ADS)

Bordin, G.; Buttino, G.

1992-12-01

In nearly zero magnetostriction Co-based Metglas amorphous ribbons, the anomalous Hall effect is used to investigate the behaviour of the surfaces (dull or shiny). The electronic transport properties of a double-layer film, where one of the two layers examined is ferromagnetic and amorphous, and the other is a non-magnetic film, are interpreted on the basis of the mean free path method of Bergmann and Fuchs-Sondheimer theory. The results obtained confirm the different structural morphology of the amorphous surfaces (dull or shiny) already observed by means of bending effects on the initial permeability that depends on the way of winding the ribbons in toroidal samples of the same amorphous materials.

Hybrid calcium phosphate coatings for implants

NASA Astrophysics Data System (ADS)

Malchikhina, Alena I.; Shesterikov, Evgeny V.; Bolbasov, Evgeny N.; Ignatov, Viktor P.; Tverdokhlebov, Sergei I.

2016-08-01

Monophasic biomaterials cannot provide all the necessary functions of bones or other calcined tissues. It is necessary to create for cancer patients the multiphase materials with the structure and composition simulating the natural bone. Such materials are classified as hybrid, obtained by a combination of chemically different components. The paper presents the physical, chemical and biological studies of coatings produced by hybrid technologies (HT), which combine primer layer and calcium phosphate (CaP) coating. The first HT type combines the method of vacuum arc titanium primer layer deposition on a stainless steel substrate with the following micro-arc oxidation (MAO) in phosphoric acid solution with addition of calcium compounds to achieve high supersaturated state. MAO CaP coatings feature high porosity (2-8%, pore size 5-7 µm) and surface morphology with the thickness greater than 5 µm. The thickness of Ti primer layer is 5-40 µm. Amorphous MAO CaP coating micro-hardness was measured at maximum normal load Fmax = 300 mN. It was 3.1 ± 0.8 GPa, surface layer elasticity modulus E = 110 ± 20 GPa, roughness Ra = 0.9 ± 0.1 µm, Rz = 7.5 ± 0.2 µm, which is less than the titanium primer layer roughness. Hybrid MAO CaP coating is biocompatible, able to form calcium phosphates from supersaturated body fluid (SBF) solution and also stimulates osteoinduction processes. The second HT type includes the oxide layer formation by thermal oxidation and then CaP target radio frequency magnetron sputtering (RFMS). Oxide-RFMS CaP coating is a thin dense coating with good adhesion to the substrate material, which can be used for metal implants. The RFMS CaP coating has thickness 1.6 ± 0.1 µm and consists of main target elements calcium and phosphorus and Ca/P ratio 2.4. The second HT type can form calcium phosphates from SBF solution. In vivo study shows that hybrid RFMS CaP coating is biocompatible and produces fibrointegration processes.

Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

PubMed

Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

2014-03-26

We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

Optical gradients in a-Si:H thin films detected using real-time spectroscopic ellipsometry with virtual interface analysis

NASA Astrophysics Data System (ADS)

Junda, Maxwell M.; Karki Gautam, Laxmi; Collins, Robert W.; Podraza, Nikolas J.

2018-04-01

Virtual interface analysis (VIA) is applied to real time spectroscopic ellipsometry measurements taken during the growth of hydrogenated amorphous silicon (a-Si:H) thin films using various hydrogen dilutions of precursor gases and on different substrates during plasma enhanced chemical vapor deposition. A procedure is developed for optimizing VIA model configurations by adjusting sampling depth into the film and the analyzed spectral range such that model fits with the lowest possible error function are achieved. The optimal VIA configurations are found to be different depending on hydrogen dilution, substrate composition, and instantaneous film thickness. A depth profile in the optical properties of the films is then extracted that results from a variation in an optical absorption broadening parameter in a parametric a-Si:H model as a function of film thickness during deposition. Previously identified relationships are used linking this broadening parameter to the overall shape of the optical properties. This parameter is observed to converge after about 2000-3000 Å of accumulated thickness in all layers, implying that similar order in the a-Si:H network can be reached after sufficient thicknesses. In the early stages of growth, however, significant variations in broadening resulting from substrate- and processing-induced order are detected and tracked as a function of bulk layer thickness yielding an optical property depth profile in the final film. The best results are achieved with the simplest film-on-substrate structures while limitations are identified in cases where films have been deposited on more complex substrate structures.

Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-04-02

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

NASA Astrophysics Data System (ADS)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In-Ga-Zn-O thin-film transistors

NASA Astrophysics Data System (ADS)

Ide, Keisuke; Kikuchi, Mitsuho; Ota, Masato; Sasase, Masato; Hiramatsu, Hidenori; Kumomi, Hideya; Hosono, Hideo; Kamiya, Toshio

2017-03-01

Microstructures of amorphous In-Ga-Zn-O (a-IGZO) thin films of different densities were analyzed. Device-quality a-IGZO films were deposited under optimum conditions, e.g., the total pressure P tot = 0.55 Pa produced high film densities of ˜6.1 g/cm3, while a very high P tot = 5.0 Pa produced low film densities of 5.5 g/cm3. Both films formed uniform high-density layers in the vicinity of the glass substrate, 10-20 nm in thickness depending on P tot, while their growth mode changed to a sparse columnar structure in thicker regions. X-ray reflectivity and in situ spectroscopic ellipsometry provided different results on densification by post deposition thermal annealing; i.e., the latter has a higher sensitivity. High-Z-contrast images obtained by high-angle annular dark-field scanning transmission electron microscopy were also useful for detecting nanometer-size non uniformity even in device-quality a-IGZO films.

Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

NASA Astrophysics Data System (ADS)

Migliorato, Piero; Delwar Hossain Chowdhury, Md; Gwang Um, Jae; Seok, Manju; Jang, Jin

2012-09-01

The analysis of current-voltage (I-V) and capacitance-voltage (C-V) characteristics for amorphous indium gallium zinc oxide Thin film transistors as a function of active layer thickness shows that negative bias under illumination stress (NBIS) is quantitatively explained by creation of a bulk double donor, with a shallow singly ionized state ɛ(0/+) > EC-0.073 eV and a deep doubly ionized state ɛ(++/+) < EC-0.3 eV. The gap density of states, extracted from the capacitance-voltage curves, shows a broad peak between EC-E = 0.3 eV and 1.0 eV, which increases in height with NBIS stress time and corresponds to the broadened transition energy between singly and doubly ionized states. We propose that the center responsible is an oxygen vacancy and that the presence of a stable singly ionized state, necessary to explain our experimental results, could be due to the defect environment provided by the amorphous network.

Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Bum Ho, E-mail: bhchoi@kitech.re.kr; Lee, Jong Ho

2014-08-04

We investigated the water vapor permeation barrier properties of 30-nm-thick SiN/SiCN/SiN nanolaminated multilayer structures grown by plasma enhanced chemical vapor deposition at 7 mTorr. The derived water vapor transmission rate was 1.12 × 10{sup −6} g/(m{sup 2} day) at 85 °C and 85% relative humidity, and this value was maintained up to 15 000 h of aging time. The X-ray diffraction patterns revealed that the nanolaminated film was composed of an amorphous phase. A mixed phase was observed upon performing high resolution transmission electron microscope analysis, which indicated that a thermodynamically stable structure was formed. It was revealed amorphous SiN/SiCN/SiN multilayer structures that are freemore » from intermixed interface defects effectively block water vapor permeation into active layer.« less

Highly (002) textured large grain bcc Cr{sub 80}Mn{sub 20} seed layer on Cr{sub 50}Ti{sub 50} amorphous layer for FePt-C granular film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Seong-Jae, E-mail: jsjigst@ecei.tohoku.ac.jp; Saito, Shin; Hinata, Shintaro

Effect of bcc Cr{sub 80}Mn{sub 20} seed layer and Cr{sub 50}Ti{sub 50} amorphous texture inducing layer on the heteroepitaxy system in FePt-C granular film was studied by introducing a new concept of the layered structure. The concept suggested that the large grain seed layer in which the crystallographic texture was initially formed on an amorphous layer in the layered structure can reduce the angular distribution of (002) c-axis crystal orientation in the FePt-C granular film owing to heteroepitaxial growth. Structure analysis by X-ray diffraction revealed that (1) when the substrate heating temperature was elevated from 300 °C to 500 °C, grain sizemore » in the seed layer increased from 9.8 nm to 11.6 nm, and then decreased with further increasing the substrate temperature. The reduction of the grain size over 500 °C corresponds to the crystallization of the amorphous texture inducing layer, (2) when the grain size increased from 9.8 nm to 11.6 nm, the angular distribution of the (002) orientation in the seed layer dramatically decreased from 13.7° to 4.1°. It was shown that the large grain seed layer increased the perpendicular hysteresis in FePt-C granular film.« less

Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

DOE PAGES

Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

2016-07-19

The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300°C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline siliconwafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450°C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450°C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltagemore » of over 710 mV and an efficiency of over 19%.« less

Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300°C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline siliconwafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450°C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450°C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltagemore » of over 710 mV and an efficiency of over 19%.« less

β-relaxation related bright bands in thin film metallic glasses: Localized percolation of flow units captured via transmission electron microscope

NASA Astrophysics Data System (ADS)

Chen, Z. Q.; Huang, P.; Xu, K. W.; Wang, F.; Lu, T. J.

2016-12-01

We report that β-relaxation of amorphous NiW alloy film was effectively enhanced by adding two thin crystalline layers into the amorphous layer. Correspondingly, more bright bands, i.e., nano shear bands, were captured in the amorphous layer, which experienced more pronounced β-relaxations. Based on the potential energy landscape theory, the bright band was proposed to be the localized percolation of flow units corresponding to β-relaxation. Our findings may help connecting experimentally β-relaxation with flow units and shed light on the microstructure origin of β-relaxation.

Preparation and characterization of B4C coatings for advanced research light sources.

PubMed

Störmer, Michael; Siewert, Frank; Sinn, Harald

2016-01-01

X-ray optical elements are required for beam transport at the current and upcoming free-electron lasers and synchrotron sources. An X-ray mirror is a combination of a substrate and a coating. The demand for large mirrors with single layers consisting of light or heavy elements has increased during the last few decades; surface finishing technology is currently able to process mirror lengths up to 1 m with microroughness at the sub-nanometre level. Additionally, thin-film fabrication is able to deposit a suitable single-layer material, such as boron carbide (B4C), some tens of nanometres thick. After deposition, the mirror should provide excellent X-ray optical properties with respect to coating thickness errors, microroughness values and slope errors; thereby enabling the mirror to transport the X-ray beam with high reflectivity, high beam flux and an undistorted wavefront to an experimental station. At the European XFEL, the technical specifications of the future mirrors are extraordinarily challenging. The acceptable shape error of the mirrors is below 2 nm along the whole length of 1 m. At the Helmholtz-Zentrum Geesthacht (HZG), amorphous layers of boron carbide with thicknesses in the range 30-60 nm were fabricated using the HZG sputtering facility, which is able to cover areas up to 1500 mm long by 120 mm wide in one step using rectangular B4C sputtering targets. The available deposition area is suitable for the specified X-ray mirror dimensions of upcoming advanced research light sources such as the European XFEL. The coatings produced were investigated by means of X-ray reflectometry and interference microscopy. The experimental results for the B4C layers are discussed according to thickness uniformity, density, microroughness and thermal stability. The variation of layer thickness in the tangential and sagittal directions was investigated in order to estimate the achieved level of uniformity over the whole deposition area, which is considerably larger than the optical area of a mirror. A waisted mask was positioned during deposition between the sputtering source and substrate to improve the thickness uniformity; particularly to prevent the formation a convex film shape in the sagittal direction. Additionally the inclination of the substrate was varied to change the layer uniformity in order to optimize the position of the mirror quality deposited area during deposition. The level of mirror microroughness was investigated for different substrates before and after deposition of a single layer of B4C. The thermal stability of the B4C layers on the various substrate materials was investigated.

Preparation and characterization of B4C coatings for advanced research light sources

PubMed Central

Störmer, Michael; Siewert, Frank; Sinn, Harald

2016-01-01

X-ray optical elements are required for beam transport at the current and upcoming free-electron lasers and synchrotron sources. An X-ray mirror is a combination of a substrate and a coating. The demand for large mirrors with single layers consisting of light or heavy elements has increased during the last few decades; surface finishing technology is currently able to process mirror lengths up to 1 m with microroughness at the sub-nanometre level. Additionally, thin-film fabrication is able to deposit a suitable single-layer material, such as boron carbide (B4C), some tens of nanometres thick. After deposition, the mirror should provide excellent X-ray optical properties with respect to coating thickness errors, microroughness values and slope errors; thereby enabling the mirror to transport the X-ray beam with high reflectivity, high beam flux and an undistorted wavefront to an experimental station. At the European XFEL, the technical specifications of the future mirrors are extraordinarily challenging. The acceptable shape error of the mirrors is below 2 nm along the whole length of 1 m. At the Helmholtz-Zentrum Geesthacht (HZG), amorphous layers of boron carbide with thicknesses in the range 30–60 nm were fabricated using the HZG sputtering facility, which is able to cover areas up to 1500 mm long by 120 mm wide in one step using rectangular B4C sputtering targets. The available deposition area is suitable for the specified X-ray mirror dimensions of upcoming advanced research light sources such as the European XFEL. The coatings produced were investigated by means of X-ray reflectometry and interference microscopy. The experimental results for the B4C layers are discussed according to thickness uniformity, density, microroughness and thermal stability. The variation of layer thickness in the tangential and sagittal directions was investigated in order to estimate the achieved level of uniformity over the whole deposition area, which is considerably larger than the optical area of a mirror. A waisted mask was positioned during deposition between the sputtering source and substrate to improve the thickness uniformity; particularly to prevent the formation a convex film shape in the sagittal direction. Additionally the inclination of the substrate was varied to change the layer uniformity in order to optimize the position of the mirror quality deposited area during deposition. The level of mirror microroughness was investigated for different substrates before and after deposition of a single layer of B4C. The thermal stability of the B4C layers on the various substrate materials was investigated. PMID:26698045

Xenon-ion irradiation of Co/Si bilayers: Magnetic and structural properties

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Zhang, K.; Čubrović, V.; Bibić, N.; Rakočević, Z.

2018-07-01

Evolution of the structure of cobalt-silicon films during Xe ions irradiation has been studied and the same is correlated with magnetic properties. The polycrystalline cobalt films were deposited by electron beam evaporation method to a thickness of 50 nm on crystalline silicon (c-Si) and silicon with pre-amorphized surface (a-Si). After deposition the layers were irradiated with 400 keV Xe ions to the fluences in the range of 2-30 × 1015 ions/cm2. Structural analysis was done by means of transmission electron microscopy, atomic force microscopy (AFM) and X-ray diffraction (XRD), while the magnetic properties were analyzed by using magneto-optical Kerr effect (MOKE) technique. For the both types of substrate the AFM and XRD results show that after Xe ions irradiation the layers become more rough and the grain size of the crystallites increases; the effects being more evidenced for all fluences for the layers deposited on pre-amorphized Si. The MOKE measurements provided the in-plane azimuthal angular dependence of the hysteresis loops and the change of magnetization with the structural parameters. Although the coercive field is influenced by the surface roughness, in the case of c-Si substrate we found it is much more determined by the size of the crystallites. Additionally, independently on the substrate used the magnetic anisotropy in the Co films disappeared as the Xe ion fluence increased, indicating that the changes of magnetization in both systems occur for similar reasons.

Formation of biodegradated polymers as components of future composite materials on the basis of shape memory alloy of medical appointment

NASA Astrophysics Data System (ADS)

Nasakina, E. O.; Baikin, A. S.; Sergiyenko, K. V.; Kaplan, M. A.; Konushkin, S. V.; Yakubov, A. D.; Izvin, A. V.; Sudarchikova, M. A.; Sevost’yanov, M. A.; Kolmakov, A. G.

2018-04-01

The processes of formation of polymer polylactide or polyglycylidactide films for the subsequent creation of a layered composite with a biodegradable layer on the basis of a nickel-free shape memory alloy TiNbTaZr are studied. The structure of the samples was determined using an SEM. The correspondence of morphology of surfaces of and the substrate itself is noted. High adhesion of the polymer to the future basis of the developed composite material is supposed. The formed films is homogeneous and amorphous throughout the polymer volume. By varying the volume of solutions, it is possible to obtain films of a given thickness for any type of polymer, its molecular weight, and the solution concentration of the polymer in chloroform. Poly (glycolide-lactide) should be more plastic than polylactide.

Photoemission studies of amorphous silicon induced by P + ion implantation

NASA Astrophysics Data System (ADS)

Petö, G.; Kanski, J.

1995-12-01

An amorphous Si layer was formed on a Si (1 0 0) surface by P + implantation at 80 keV. This layer was investigated by means of photoelectron spectroscopy. The resulting spectra are different from earlier spectra on amorphous Si prepared by e-gun evaporation or cathode sputtering. The differences consist of a decreased intensity in the spectral region corresponding to p-states, and appearace of new states at higher binding energy. Qualitativity similar results have been reported for Sb implanted amorphous Ge and the modification seems to be due to the changed short range order.

Influence of 20 MeV electron irradiation on the optical properties and phase composition of SiOx thin films

NASA Astrophysics Data System (ADS)

Hristova-Vasileva, Temenuga; Petrik, Peter; Nesheva, Diana; Fogarassy, Zsolt; Lábár, János; Kaschieva, Sonia; Dmitriev, Sergei N.; Antonova, Krassimira

2018-05-01

Homogeneous films from SiO1.3 (250 nm thick) were deposited on crystalline Si substrates by thermal evaporation of silicon monoxide. A part of the films was further annealed at 700 °C to grow amorphous Si (a-Si) nanoclusters in an oxide matrix, thus producing composite a-Si-SiO1.8 films. Homogeneous as well as composite films were irradiated by 20-MeV electrons at fluences of 7.2 × 1014 and 1.44 × 1015 el/cm2. The film thicknesses and optical constants were explored by spectroscopic ellipsometry. The development of the phase composition of the films caused by the electron-beam irradiation was studied by transmission electron microscopy. The ellipsometric and electron microscopy results have shown that the SiOx films are optically homogeneous and the electron irradiation with a fluence of 7.2 × 1014 el/cm2 has led to small changes in the optical constants and the formation of very small a-Si nanoclusters. The irradiation of the a-Si-SiOx composite films caused a decrease in the effective refractive index and, at the same time, an increase in the refractive index of the oxide matrix. Irradiation induced increase in the optical band gap and decrease in the absorption coefficient of the thermally grown amorphous Si nanoclusters have also been observed. The obtained results are discussed in terms of the formation of small amorphous silicon nanoclusters in the homogeneous layers and electron irradiation induced reduction in the nanocluster size in the composite films. The conclusion for the nanoparticle size reduction is supported by infrared transmittance results.

Avalanche multiplication and impact ionization in amorphous selenium photoconductive target

NASA Astrophysics Data System (ADS)

Park, Wug-Dong; Tanioka, Kenkichi

2014-03-01

The avalanche multiplication factor and the hole ionization coefficient in the amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) target depend on the electric field. The phenomenon of avalanche multiplication and impact ionization in the 0.4-µm-thick a-Se HARP target is investigated. The hot carrier energy in the 0.4-µm-thick a-Se HARP target increases linearly as the target voltage increases. The energy relaxation length of hot carriers in the a-Se photoconductor of the 0.4-µm-thick HARP target saturates as the electric field increases. The average energy Eav of a hot carrier and the energy relaxation length λE in the a-Se photoconductor of the 0.4-µm-thick HARP target at 1 × 108 V/m were 0.25 eV and 2.5 nm, respectively. In addition, the hole ionization coefficient β and the avalanche multiplication factor M are derived as a function of the electric field, the average energy of a hot carrier, and the impact ionization energy. The experimental hole ionization coefficient β and the avalanche multiplication factor M in the 0.4-µm-thick a-Se HARP target agree with the theoretical results.

Abnormal elastic modulus behavior in a crystalline-amorphous core-shell nanowire system.

PubMed

Lee, Jeong Hwan; Choi, Su Ji; Kwon, Ji Hwan; Van Lam, Do; Lee, Seung Mo; Kim, An Soon; Baik, Hion Suck; Ahn, Sang Jung; Hong, Seong Gu; Yun, Yong Ju; Kim, Young Heon

2018-06-13

We investigated the elastic modulus behavior of crystalline InAs/amorphous Al2O3 core-shell heterostructured nanowires with shell thicknesses varying between 10 and 90 nm by conducting in situ tensile tests inside a transmission electron microscope (TEM). Counterintuitively, the elastic modulus behaviors of InAs/Al2O3 core-shell nanowires differ greatly from those of bulk-scale composite materials, free from size effects. According to our results, the elastic modulus of InAs/Al2O3 core-shell nanowires increases, peaking at a shell thickness of 40 nm, and then decreases in the range of 50-90 nm. This abnormal behavior is attributed to the continuous decrease in the elastic modulus of the Al2O3 shell as the thickness increases, which is caused by changes in the atomic/electronic structure during the atomic layer deposition process and the relaxation of residual stress/strain in the shell transferred from the interfacial mismatch between the core and shell materials. A novel method for estimating the elastic modulus of the shell in a heterostructured core-shell system was suggested by considering these two effects, and the predictions from the suggested method coincided well with the experimental results. We also found that the former and latter effects account for 89% and 11% of the change in the elastic modulus of the shell. This study provides new insight by showing that the size dependency, which is caused by the inhomogeneity of the atomic/electronic structure and the residual stress/strain, must be considered to evaluate the mechanical properties of heterostructured nanowires.

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

NASA Astrophysics Data System (ADS)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low dielectric loss (0.007), and low leakage current (<2×10-8 A/cm2 at 100 kV/cm) were achieved for BST thin film capacitors with Cu-based electrodes.

Monoatomic layer removal mechanism in chemical mechanical polishing process: A molecular dynamics study

NASA Astrophysics Data System (ADS)

Si, Lina; Guo, Dan; Luo, Jianbin; Lu, Xinchun

2010-03-01

Molecular dynamics simulations of nanoscratching processes were used to study the atomic-scale removal mechanism of single crystalline silicon in chemical mechanical polishing (CMP) process and particular attention was paid to the effect of scratching depth. The simulation results under a scratching depth of 1 nm showed that a thick layer of silicon material was removed by chip formation and an amorphous layer was formed on the silicon surface after nanoscratching. By contrast, the simulation results with a depth of 0.1 nm indicated that just one monoatomic layer of workpiece was removed and a well ordered crystalline surface was obtained, which is quite consistent with previous CMP experimental results. Therefore, monoatomic layer removal mechanism was presented, by which it is considered that during CMP process the material was removed by one monoatomic layer after another, and the mechanism could provide a reasonable understanding on how the high precision surface was obtained. Also, the effects of the silica particle size and scratching velocity on the removal mechanism were investigated; the wear regimes and interatomic forces between silica particle and workpiece were studied to account for the different removal mechanisms with indentation depths of 0.1 and 1 nm.

In-Situ Observation of Nano-Oxide Formation in Magnetic Thin Films

NASA Astrophysics Data System (ADS)

McCallum, Andrew; Russek, Stephen

2004-03-01

Exposure of a metal surface in a spin valve structure to oxygen creates a nano-oxide layer, or NOL, on that surface. Inclusion of NOLs into spin valve structures has been shown by many researchers to lower the resistance and increase the giant magnetoresistance effect. Four point in-situ conductance measurements were made during the deposition and oxidation of Co layers. These measurements show an initial decrease in conductance followed by an increase in conductance, due to a specularity increase of at least 0.10. RHEED measurements taken simultaneously with conductance measurements show the formation an amorphous oxide while the specularity increases. With further exposure of oxygen to the surface a CoO structure with a (111) texture forms. Magnetoconductance measurements during the oxidation of the free layer of bottom pinned spin valves show increases in the GMR of the spin valves. Estimates of the change in specularity and Co layer thickness were determined from the change in conductance and the change in magnetoconductance. Also determined from the magnetoconductance measurements was an increase in the coercivity of the free layer with oxidation. Adding Co onto the oxide had a strong effect on the coercivity and coupling between free and pinned layers.

Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

NASA Astrophysics Data System (ADS)

Hadjichristov, G. B.; Ivanov, Tz E.; Marinov, Y. G.

2014-12-01

Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+ at the fluence of 3.2 × 1016 cm-2 the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined.

In situ observation of defect annihilation in Kr ion-irradiated bulk Fe/amorphous-Fe 2 Zr nanocomposite alloy

DOE PAGES

Yu, K. Y.; Fan, Z.; Chen, Y.; ...

2014-08-26

Enhanced irradiation tolerance in crystalline multilayers has received significant attention lately. However, little is known on the irradiation response of crystal/amorphous nanolayers. We report on in situ Kr ion irradiation studies of a bulk Fe 96Zr 4 nanocomposite alloy. Irradiation resulted in amorphization of Fe 2Zr and formed crystal/amorphous nanolayers. α-Fe layers exhibited drastically lower defect density and size than those in large α-Fe grains. In situ video revealed that mobile dislocation loops in α-Fe layers were confined by the crystal/amorphous interfaces and kept migrating to annihilate other defects. This study provides new insights on the design of irradiation-tolerant crystal/amorphousmore » nanocomposites.« less

Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

DOE PAGES

Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; ...

2014-11-05

Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC 5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC 5 composite at the laser wavelength, and the pulse-width dependencemore » is attributed to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.« less

Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon

Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC 5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC 5 composite at the laser wavelength, and the pulse-width dependencemore » is attributed to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.« less

A delta-doped amorphous silicon thin-film transistor with high mobility and stability

NASA Astrophysics Data System (ADS)

Kim, Pyunghun; Lee, Kyung Min; Lee, Eui-Wan; Jo, Younjung; Kim, Do-Hyung; Kim, Hong-jae; Yang, Key Young; Son, Hyunji; Choi, Hyun Chul

2012-12-01

Ultrathin doped layers, known as delta-doped layers, were introduced within the intrinsic amorphous silicon (a-Si) active layer to fabricate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with enhanced field-effect mobility. The performance of the delta-doped a-Si:H TFTs depended on the phosphine (PH3) flow rate and the distance from the n+ a-Si to the deltadoping layer. The delta-doped a-Si:H TFTs fabricated using a commercial manufacturing process exhibited an enhanced field-effect mobility of approximately ˜0.23 cm2/Vs (compared to a conventional a-Si:H TFT with 0.15 cm2/Vs) and a desirable stability under a bias-temperature stress test.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novikov, S. V.; Ting, M.; Yu, K. M.

In this paper we report our study on n-type Te doping of amorphous GaN 1-xAs x layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN 1-xAs x layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN 1-xAs x layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN 1-xAs x layers hasmore » been determined.« less

Effect of ultra-thin liner materials on copper nucleation/wetting and copper grain growth

NASA Astrophysics Data System (ADS)

Mueller, Justin E.

One of the key challenges facing future integrated circuit copper (Cu) interconnect manufacturing is to achieve uniform coverage of PVD Cu seed layer at minimum thickness on a liner and barrier. We have therefore characterized the nucleation and wetting of PVD Cu on various liner surfaces by monitoring in-situ the film's electrical conductance during the initial stages of deposition (0 to 25 nm). Our results showed that the Cu wetting is sensitive to the Cu/liner interfacial properties, while the nucleation depends on the liner microstructure. It was found that a ruthenium (Ru) liner has a good Cu wetting characteristic and allows at the onset nearly layer by layer Cu growth. Because of good wetting, Cu growth is not significantly affected by Ru liner grain size. Tantalum (Ta), however, exhibits poor Cu wetting, which results in an initial stage of three dimensional island growth of Cu. In this case, Cu island coalescing occurs sooner, at a smaller Cu film thickness, when the nucleation site density is increased with a smaller grain size Ta liner. To optimize the seed layer's conductance and step coverage, a liner with combined properties of Ta (for adhesion and barrier formation) and Ru (for wetting and grain growth) may be desired. A hybrid magnetron target has been developed for depositing TaRu liner films at various compositions. The microstructure of the compound liners and their effects on the overgrown Cu seed layer over a wide range of TaRu composition is presented. It was found that below 80% Ru concentration, TaRu films are amorphous. An amorphous liner results in poor Cu nucleation as compared with a crystalline Ta or Ru liner. A comparison of the microstructure of thin Cu films deposited on bcc alpha-Ta and tetragonal beta-Ta surfaces has been carried out. Cu resistivity is lower by 10-15%, accompanied by larger Cu grain size, in as-deposited Cu films of various thickness' (30-120 nm) on beta-Ta as compared to those deposited on alpha-Ta. This is due to the presence of an epitaxial relationship between Cu (111) and beta-Ta (002) planes. After annealing, the difference was only seen in films thinner than 60 nm. Results were confirmed when Cu film resistance was measured in-situ during deposition on each phase of Ta liner. Serpentine interconnect line structures of various line widths and aspect ratios were fabricated using either alpha- or beta-Ta liners, and subjected to a similar heat treatment. Results showed a similar ˜10% lower resistivity in the thinnest interconnects (˜40 nm) when a beta-Ta liner was used.

Remarkably stable amorphous metal oxide grown on Zr-Cu-Be metallic glass

PubMed Central

Lim, Ka Ram; Kim, Chang Eun; Yun, Young Su; Kim, Won Tae; Soon, Aloysius; Kim, Do Hyang

2015-01-01

In the present study, we investigated the role of an aliovalent dopant upon stabilizing the amorphous oxide film. We added beryllium into the Zr50Cu50 metallic glass system, and found that the amorphous oxide layer of Be-rich phase can be stabilized even at elevated temperature above Tg of the glass matrix. The thermal stability of the amorphous oxide layer is substantially enhanced due to Be addition. As confirmed by high-temperature cross-section HR-TEM, fully disordered Be-added amorphous layer is observed, while the rapid crystallization is observed without Be. To understand the role of Be, we employed ab-initio molecular dynamics to compare the mobility of ions with/without Be dopant, and propose a disordered model where Be dopant occupies Zr vacancy and induces structural disorder to the amorphous phase. We find that the oxygen mobility is slightly suppressed due to Be dopant, and Be mobility is unexpectedly lower than that of oxygen, which we attribute to the aliovalent nature of Be dopant whose diffusion always accompany multiple counter-diffusion of other ions. Here, we explain the origin of superior thermal stability of amorphous oxide film in terms of enhanced structural disorder and suppressed ionic mobility due to the aliovalent dopant. PMID:26658671

Remarkably stable amorphous metal oxide grown on Zr-Cu-Be metallic glass.

PubMed

Lim, Ka Ram; Kim, Chang Eun; Yun, Young Su; Kim, Won Tae; Soon, Aloysius; Kim, Do Hyang

2015-12-14

In the present study, we investigated the role of an aliovalent dopant upon stabilizing the amorphous oxide film. We added beryllium into the Zr50Cu50 metallic glass system, and found that the amorphous oxide layer of Be-rich phase can be stabilized even at elevated temperature above Tg of the glass matrix. The thermal stability of the amorphous oxide layer is substantially enhanced due to Be addition. As confirmed by high-temperature cross-section HR-TEM, fully disordered Be-added amorphous layer is observed, while the rapid crystallization is observed without Be. To understand the role of Be, we employed ab-initio molecular dynamics to compare the mobility of ions with/without Be dopant, and propose a disordered model where Be dopant occupies Zr vacancy and induces structural disorder to the amorphous phase. We find that the oxygen mobility is slightly suppressed due to Be dopant, and Be mobility is unexpectedly lower than that of oxygen, which we attribute to the aliovalent nature of Be dopant whose diffusion always accompany multiple counter-diffusion of other ions. Here, we explain the origin of superior thermal stability of amorphous oxide film in terms of enhanced structural disorder and suppressed ionic mobility due to the aliovalent dopant.

Chemically sensitive free-volume study of amorphization of Cu60Zr40 induced by cold rolling and folding

NASA Astrophysics Data System (ADS)

Puff, Werner; Rabitsch, Herbert; Wilde, Gerhard; Dinda, Guru P.; Würschum, Roland

2007-06-01

With the aim to contribute to a microscopical understanding of the processes of solid-state amorphization, the chemically sensitive technique of background—reduced Doppler broadening of positron-electron annihilation radiation in combination with positron lifetime spectroscopy and microstructural characterization is applied to a free volume study of the amorphization of Cu60Zr40 induced by consecutive folding and rolling. Starting from the constituent pure metal foils, a nanosale multilayer structure of elemental layers and amorphous interlayers develops in an intermediate state of folding and rolling, where free volumes with a Zr-rich environment occur presumably located in the hetero-interfaces between the various layers or in grain boundaries of the Cu layers. After complete intermixing and amorphization, the local chemical environment of the free volumes reflects the average chemical alloy composition. In contrast to other processes of amorphization, free volumes of the size of few missing atoms occur in the rolling-induced amorphous state. Self-consistent results from three different methods for analyzing the Doppler broadening spectra, i.e., S-W-parameter correlation, multicomponent fit, and the shape of ratio curves, demonstrate the potential of the background-reduced Doppler technique for chemically sensitive characterization of structurally complex materials on an atomic scale.

Interface properties of the amorphous silicon/crystalline silicon heterojunction photovoltaic cell

NASA Astrophysics Data System (ADS)

Halliop, Basia

Amorphous-crystalline silicon (a-Si:H/c-Si) heterojunctions have the potential of being a very high efficiency silicon photovoltaic platform technology with accompanying cost and energy budget reductions. In this research a heterojunction cell structure based on a-Si:H deposited using a DC saddle field plasma enhanced vapour deposition (DCSF PECVD) technique is studied, and the a-Si:H/c-Si and indium tin oxide/a-Si:H interfaces are examined using several characterization methods. Photocarrier radiometry (PCR) is used for the first time to probe the a-Si:H/c-Si junction. PCR is demonstrated as a carrier lifetime measurement technique -- specifically, confirming carrier lifetimes above 1 ms for 1-5 Ocm phosphorous-doped c-Si wafers passivated on both sides with 30 nm of i-a-Si:H. PCR is also used to determine surface recombination velocity and mobility, and to probe recombination at the a-Si:H/c-Si interface, distinguishing interface recombination from recombination within the a-Si:H layer or at the a-Si:H surface. A complementary technique, lateral conductivity is applied over a temperature range of 140 K to 430 K to construct energy band diagrams of a-Si:H/c-Si junctions. Boron doped a-Si:H films on glass are shown to have activation energies of 0.3 to 0.35 eV, tuneable by adjusting the diborane to silane gas ratio during deposition. Heterojunction samples show evidence of a strong hole inversion layer and a valence band offset of approximately 0.4 eV; carrier concentration in the inversion layer is reduced in p-a-Si:H/i-a-Si:H/ c-Si structures as intrinsic layer thickness increases, while carrier lifetime is increased. The indium tin oxide/amorphous silicon interface is also examined. Optimal ITO films were prepared with a sheet resistance of 17.3 O/[special character omitted] and AM1.5 averaged transmittance of 92.1%., for a film thickness of approximately 85 nm, using temperatures below 200°C. Two different heat treatments are found to cause crystallization of ITO and to change the properties of the underlying a-Si:H film. Finally, an open circuit voltage of 699 mV was achieved using DCSF PECVD in the tetrode configuration to fabricate a metal/ITO/p-a-Si:H/ i-a-Si:H/n-c-Si/i-a-Si:H/ n+-a-Si:H/metal photovoltaic cell on a texturized wafer. The 4 cm2 cell had an efficiency of 16.5%, a short circuit current of 36.4 mA/cm2 and a fill factor of 64.7%.

Nano-scale zirconia and hafnia dielectrics grown by atomic layer deposition: Crystallinity, interface structures and electrical properties

NASA Astrophysics Data System (ADS)

Kim, Hyoungsub

With the continued scaling of transistors, leakage current densities across the SiO2 gate dielectric have increased enormously through direct tunneling. Presently, metal oxides having higher dielectric constants than SiO2 are being investigated to reduce the leakage current by increasing the physical thickness of the dielectric. Many possible techniques exist for depositing high-kappa gate dielectrics. Atomic layer deposition (ALD) has drawn attention as a method for preparing ultrathin metal oxide layers with excellent electrical characteristics and near-perfect film conformality due to the layer-by-layer nature of the deposition mechanism. For this research, an ALD system using ZrCl4/HfCl4 and H2O was built and optimized. The microstructural and electrical properties of ALD-ZrO2 and HfO2 grown on SiO2/Si substrates were investigated and compared using various characterization tools. In particular, the crystallization kinetics of amorphous ALD-HfO2 films were studied using in-situ annealing experiments in a TEM. The effect of crystallization on the electrical properties of ALD-HfO 2 was also investigated using various in-situ and ex-situ post-deposition anneals. Our results revealed that crystallization had little effect on the magnitude of the gate leakage current or on the conduction mechanisms. Building upon the results for each metal oxide separately, more advanced investigations were made. Several nanolaminate structures using ZrO2 and HfO2 with different sequences and layer thicknesses were characterized. The effects of the starting microstructure on the microstructural evolution of nanolaminate stacks were studied. Additionally, a promising new approach for engineering the thickness of the SiO2-based interface layer between the metal oxide and silicon substrate after deposition of the metal oxide layer was suggested. Through experimental measurements and thermodynamic analysis, it is shown that a Ti overlayer, which exhibits a high oxygen solubility, can effectively getter oxygen from the interface layer, thus decomposing SiO2 and reducing the interface layer thickness in a controllable fashion. As one of several possible applications, ALD-ZrO2 and HfO 2 gate dielectric films were deposited on Ge (001) substrates with different surface passivations. After extensive characterization using various microstructural, electrical, and chemical analyses, excellent MOS electrical properties of high-kappa gate dielectrics on Ge were successfully demonstrated with optimized surface nitridation of the Ge substrates.

Fabrication of luminescent porous silicon with stain etches and evidence that luminescence originates in amorphous layers

NASA Technical Reports Server (NTRS)

Fathauer, R. W.; George, T.; Ksendzov, A.; Lin, T. L.; Pike, W. T.; Vasquez, R. P.; Wu, Z.-C.

1992-01-01

Simple immersion of Si in stain etches of HF:HNO3:H2O or NaNO2 in aqueous HF was used to produce films exhibiting luminescence in the visible similar to that of anodically-etched porous Si. All of the luminescent samples consist of amorphous porous Si in at least the near surface region. No evidence was found for small crystalline regions within these amorphous layers.

Plasma deposited stability enhancement coating for amorphous ketoprofen.

PubMed

Bosselmann, Stephanie; Owens, Donald E; Kennedy, Rachel L; Herpin, Matthew J; Williams, Robert O

2011-05-01

A hydrophobic fluorocarbon coating deposited onto amorphous ketoprofen via pulsed plasma-enhanced chemical vapor deposition (PPECVD) significantly prolonged the onset of recrystallization compared to uncoated drug. Rapid freezing (RF) employed to produce amorphous ketoprofen was followed by PPECVD of perfluorohexane. The effect of coating thickness on the recrystallization and dissolution behavior of ketoprofen was investigated. Samples were stored in open containers at 40°C and 75% relative humidity, and the onset of recrystallization was monitored by DSC. An increase in coating thickness provided enhanced stability against recrystallization for up to 6 months at accelerated storage conditions (longest time of observation) when compared to three days for uncoated ketoprofen. Results from XPS analysis demonstrated that an increase in coating thickness was associated with improved surface coverage thus enabling superior protection. Dissolution testing showed that at least 80% of ketoprofen was released in buffer pH 6.8 from all coated samples. Overall, an increase in coating thickness resulted in a more complete drug release due to decreased adhesion of the coating to the substrate. Copyright © 2010 Elsevier B.V. All rights reserved.

Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

NASA Astrophysics Data System (ADS)

Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

2018-06-01

In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

Temperature- and frequency-dependent dielectric behaviors of insulator/semiconductor (Al2O3/ZnO) nanolaminates with various ZnO thicknesses

NASA Astrophysics Data System (ADS)

Li, Jin; Bi, Xiaofang

2016-07-01

Al2O3/ZnO nanolaminates (NLs) with various ZnO sublayer thicknesses were prepared by atomic layer deposition. The Al2O3 sublayers are characterized as amorphous and the ZnO sublayers have an oriented polycrystalline structure. As the ZnO thickness decreases to a certain value, each NL exhibits a critical temperature at which its dielectric constant starts to rise quickly. Moreover, this temperature increases as the ZnO thickness is decreased further. On the other hand, the permittivity demonstrates a large value of several hundred at a frequency  ⩽1000 Hz, followed by a steplike decrease at a higher frequency. The change in the cut-off frequency with ZnO thickness is characterized by a hook function. It is revealed that the Coulomb confinement effect becomes predominant in the dielectric behaviors of the NLs with very thin ZnO. As the ZnO thickness decreases to about the same as or even smaller than the Bohr radius of ZnO, a great change in the carrier concentration and effective mass of ZnO is induced, which is shown to be responsible for the peculiar dielectric behaviors of Al2O3/ZnO with very thin ZnO. These findings provide insight into the prevailing mechanisms to optimize the dielectric properties of semiconductor/insulator laminates with nanoscale sublayer thickness.

Photo-induced heat generation in non-plasmonic nanoantennas.

PubMed

Danesi, Stefano; Gandolfi, Marco; Carletti, Luca; Bontempi, Nicolò; De Angelis, Costantino; Banfi, Francesco; Alessandri, Ivano

2018-05-24

Light-to-heat conversion in non-plasmonic, high refractive index nanoantennas is a key topic for many applications, including Raman sensing, laser writing, nanofabrication and photo-thermal therapy. However, heat generation and propagation in non-plasmonic antennas is increasingly debated and contradictory results have been reported so far. Here we report a finite element analysis of the steady-state temperature distribution and heat flow in SiO2/Si core/shell systems (silicon nanoshells) irradiated with different continuous wave lasers (λ = 532, 633 and 785 nm), under real working conditions. The complex interplay among the optical properties, morphology, degree of crystallinity of the nanoshells, thickness dependence of thermal conductivity and interactions with the substrate has been elucidated. This study reveals that all of these parameters can be appropriately combined for obtaining either stable nanoshells for Raman sensing or highly efficient sources of local heating. The optimal balance between thermal stability and field enhancement was found for crystalline Si shell layers with thicknesses ranging from 40 to 60 nm, irradiated by a NIR laser source. On the other hand, non-conformal amorphous or crystalline shell layers with a thickness >50 nm can reach a very high local temperature (above 1000 K) when irradiated with a low power density (less than 1 mW μm-2) laser sources. This work provides a general approach for an extensive investigation of the opto-thermal properties of high-index nanoantennas.

The role of S(II) and Pb(II) in xanthate flotation of smithsonite: Surface properties and mechanism

NASA Astrophysics Data System (ADS)

Jia, Kai; Feng, Qiming; Zhang, Guofan; Ji, Wanying; Zhang, Wukai; Yang, Bingqian

2018-06-01

Smithsonite is a readily dissolvable carbonate mineral that is naturally hydrophilic, making recovery of this ore by flotation difficult. The flotation results showed that conditioning with only sodium sulfide (Na2S) did not successfully allow the smithsonite samples to float, whereas treatment with a combination of S(II), Pb(II) and xanthate (with Na2S as the sulfurizing reagent, lead ions (Pb(II)) as the activator, and xanthate as the collector) improved the flotation of smithsonite, achieving a mass recovery of 95.8%. A combination of analytical techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), in conjunction with depth profiling, was used to investigate the chemical nature of the sulfur and lead species on the smithsonite surface. For S(II)-conditioned smithsonite, a layer of ZnS formed on the smithsonite (ZnCO3) substrates; this newly formed ZnS coating was amorphous or poorly crystallized. For smithsonite samples conditioned with S(II) and Pb(II), the microstructures and the phase constituents, obtained by AFM and XRD analyses, confirmed the formation of the PbS species with a cubic galena structure on the surface. XPS depth profiling showed that the PbS layer was 18-nm thick, which corresponds to 30 PbS molecular layers. This study presents direct evidence that the coating of the activation product, PbS, on the smithsonite surface was similar to a relatively thick galena layer, which led to successful flotation.

Interfacial structure and electrical properties of ultrathin HfO2 dielectric films on Si substrates by surface sol-gel method

NASA Astrophysics Data System (ADS)

Gong, You-Pin; Li, Ai-Dong; Qian, Xu; Zhao, Chao; Wu, Di

2009-01-01

Ultrathin HfO2 films with about ~3 nm thickness were deposited on n-type (1 0 0) silicon substrates using hafnium chloride (HfCl4) source by the surface sol-gel method and post-deposition annealing (PDA). The interfacial structure and electrical properties of ultrathin HfO2 films were investigated. The HfO2 films show amorphous structures and smooth surface morphologies with a very thin interfacial oxide layer of ~0.5 nm and small surface roughness (~0.45 nm). The 500 °C PDA treatment forms stronger Hf-O bonds, leading to passivated traps, and the interfacial layer is mainly Hf silicate (HfxSiyOz). Equivalent oxide thickness of around 0.84 nm of HfO2/Si has been obtained with a leakage current density of 0.7 A cm-2 at Vfb + 1 V after 500 °C PDA. It was found that the current conduction mechanism of HfO2/Si varied from Schottky-Richardson emission to Fowler-Nordheim tunnelling at an applied higher positive voltage due to the activated partial traps remaining in the ultrathin HfO2 films.

Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shetty, Satish; Shivaprasad, S. M., E-mail: smsprasad@jncasr.ac.in

2016-02-07

We report here a systematic study of the nitridation of the Si (111) surface by nitrogen plasma exposure. The surface and interface chemical composition and surface morphology are investigated by using RHEED, X-ray photoelectron spectroscopy, and atomic force microscopy (AFM). At the initial stage of nitridation two superstructures—“8 × 8” and “8/3 × 8/3”—form, and further nitridation leads to 1 × 1 stoichiometric silicon nitride. The interface is seen to have the Si{sup 1+} and Si{sup 3+} states of silicon bonding with nitrogen, which suggests an atomically abrupt and defect-free interface. The initial single crystalline silicon nitride layers are seen to become amorphous at higher thicknesses.more » The AFM image shows that the nitride nucleates at interfacial dislocations that are connected by sub-stoichiometric 2D-nitride layers, which agglomerate to form thick overlayers. The electrical properties of the interface yield a valence band offset that saturates at 1.9 eV and conduction band offset at 2.3 eV due to the evolution of the sub-stoichiometric interface and band bending.« less

Charging and breakdown in amorphous dielectrics: Phenomenological modeling approach and applications

NASA Astrophysics Data System (ADS)

Palit, Sambit

Amorphous dielectrics of different thicknesses (nm to mm) are used in various applications. Low temperature processing/deposition of amorphous thin-film dielectrics often result in defect-states or electronic traps. These traps are responsible for increased leakage currents and bulk charge trapping in many associated applications. Additional defects may be generated during regular usage, leading to electrical breakdown. Increased leakage currents, charge trapping and defect generation/breakdown are important and pervasive reliability concerns in amorphous dielectrics. We first explore the issue of charge accumulation and leakage in amorphous dielectrics. Historically, charge transport in amorphous dielectrics has been presumed, depending on the dielectric thickness, to be either bulk dominated (Frenkel-Poole (FP) emission) or contact dominated (Fowler-Nordheim tunneling). We develop a comprehensive dielectric charging modeling framework which solves for the transient and steady state charge accumulation and leakage currents in an amorphous dielectric, and show that for intermediate thickness dielectrics, the conventional assumption of FP dominated current transport is incorrect, and may lead to false extraction of dielectric parameters. We propose an improved dielectric characterization methodology based on an analytical approximation of our model. Coupled with ab-initio computed defect levels, the dielectric charging model explains measured leakage currents more accurately with lesser empiricism. We study RF-MEMS capacitive switches as one of the target applications of intermediate thickness amorphous dielectrics. To achieve faster analysis and design of RF-MEMS switches in particular, and electro-mechanical actuators in general, we propose a set of fundamental scaling relationships which are independent of specific physical dimensions and material properties; the scaling relationships provide an intrinsic classification of all electro-mechanical actuators. However, RF-MEMS capacitive switches are plagued by the reliability issue of temporal shifts of actuation voltages due to dielectric charge accumulation, often resulting in failure due to membrane stiction. Using the dielectric charging model, we show that in spite of unpredictable roughness of deposited dielectrics, there are predictable shifts in actuation voltages due to dielectric charging in RF-MEMS switches. We also propose a novel non-obtrusive, non-contact, fully electronic resonance based technique to characterize charging driven actuation shifts in RF-MEMS switches which overcomes limitations in conventionally used methods. Finally, we look into the issue of defect generation and breakdown in thick polymer dielectrics. Polymer materials often face premature electrical breakdown due to high electric fields and frequencies, and exposure to ambient humidity conditions. Using a field-driven correlated defect generation model, coupled with a model for temperature rise due to dielectric heating at AC stresses, we explain measured trends in time-to-breakdown and breakdown electric fields in polymer materials. Using dielectric heating we are able to explain the observed lifetime and dielectric strength reduction with increasing dielectric thicknesses. Performing lifetime measurements after exposure to controlled humidity conditions, we find that moisture ingress into a polymer material reduces activation barriers for chain breakage and increases dielectric heating. Overall, this thesis develops a comprehensive framework of dielectric charging, leakage and degradation of insulators of different thicknesses that have broad applications in multiple technologies.

Nanometer-Scale Epitaxial Strain Release in Perovskite Heterostructures Using 'SrAlOx' Sliding Buffer Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bell, Christopher

2011-08-11

We demonstrate the strain release of LaAlO{sub 3} epitaxial film on SrTiO{sub 3} (001) by inserting ultra-thin 'SrAlO{sub x}' buffer layers. Although SrAlO{sub x} is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlO{sub x}, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO{sub 3} filmand the SrTiO{sub 3} substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite film farmore » below the thermodynamic critical thickness. A central issue in heteroepitaxial filmgrowth is the inevitable difference in lattice constants between the filmand substrate. Due to this lattice mismatch, thin film are subjected to microstructural strain, which can have a significan effect on the filmproperties. This challenge is especially prominent in the rapidly developing fiel of oxide electronics, where much interest is focused on incorporating the emergent physical properties of oxides in devices. Although strain can be used to great effect to engineer unusual ground states, it is often deleterious for bulk first-orde phase transitions, which are suppressed by the strain and symmetry constraints of the substrate. While there are some reports discussing the control of the lattice mismatch in oxides using thick buffer layers, the materials choice, lattice-tunable range, and control of misfit dislocations are still limited. In this Letter, we report the fabrication of strain-relaxed LaAlO{sub 3} (LAO) thin film on SrTiO{sub 3} (STO) (001) using very thin 'SrAlO{sub x}' (SAO) buffer layers. Whereas for 1 or 2 pseudo-perovskite unit cells (uc) of SAO, the subsequent LAO filmis strained to the substrate, at a critical thickness of 3 uc the SAO interlayer abruptly relieves the lattice mismatch between the LAO and the STO, although maintaining the relative crystalline orientation between the filmand the substrate. For 4 uc or greater, the perovskite epitaxial template is lost and the LAO filmis amorphous. These results suggest that metastable interlayers can be used for strain release on the nanometer scale.« less

Diffusion behavior of Cu/Ta heterogeneous interface under high temperature and high strain: An atomistic investigation

NASA Astrophysics Data System (ADS)

Li, Ganglong; Wu, Houya; Luo, Honglong; Chen, Zhuo; Tay, Andrew A. O.; Zhu, Wenhui

2017-09-01

Three-dimensional (3D) integration technology using Cu interconnections has emerged as a promising solution to improve the performance of silicon microelectronic devices. However, Cu diffuses into SiO2 and requires a barrier layer such as Ta to ensure acceptable reliability. In this paper, the effects of temperature and strain normal to the interface on the inter-diffusion of Cu and Ta at annealing conditions are investigated using a molecular dynamics (MD) technique with embedded atomic method (EAM) potentials. Under thermal annealing conditions without strain, it is found that a Cu-rich diffusion region approximately 2 nm thick is formed at 1000 K after 10 ns of annealing. Ta is capable of diffusing into the interior of Cu but Cu hardly diffuses into the inner lattice of Ta. At the Cu side near the interface an amorphous structure is formed due to the process of diffusion. The diffusion activation energy of Cu and Ta are found to be 0.9769 and 0.586 eV, respectively. However, when a strain is applied, a large number of crystal defects are generated in the sample. As the strain is increased, extrinsic stacking faults (ESFs) and lots of Shockley partial dislocations appear. The density of the dislocations and the diffusion channels increase, promoting the diffusion of Cu atoms into the inner lattice of Ta. The thickness of the diffusion layer increases to 4 times the value when only a temperature load of 700 K is applied. The MD simulations demonstrated that Ta is very effective as a barrier layer under thermal loading only, and its effectiveness is impaired by tensile strain at the Cu/Ta interface. The simulations also clarified the mechanism that caused the impairment. The methodology and approach described in this paper can be followed further to study the effectiveness of barrier layers under various annealing and strain conditions, and to determine the minimum thickness of barrier layers required for a particular application.

Red-luminescence band: A tool for the quality assessment of germanium and silicon nanocrystals

NASA Astrophysics Data System (ADS)

Fraj, I.; Favre, L.; David, T.; Abbarchi, M.; Liu, K.; Claude, J. B.; Ronda, A.; Naffouti, M.; Saidi, F.; Hassen, F.; Maaref, H.; Aqua, J. N.; Berbezier, I.

2017-10-01

We present the photoluminescence (PL) emission of Silicon and Germanium nanocrystals (NCs) of different sizes embedded in two different matrices. Formation of the NCs is achieved via solid-state dewetting during annealing in a molecular beam epitaxy ultra-high vacuum system of ultrathin amorphous Si and Ge layers deposited at room temperature on SiO2. During the dewetting process, the bi-dimensional amorphous layers transform into small pseudo-spherical islands whose mean size can be tuned directly with the deposited thickness. The nanocrystals are capped either ex situ by silicon dioxide or in situ by amorphous Silicon. The surface-state dependent emission (typically in the range 1.74 eV-1.79 eV) exhibited higher relative PL quantum yields compared to the emission originating from the band gap transition. This red-PL emission comes from the radiative transitions between a Si band and an interface level. It is mainly ascribed to the NCs and environment features deduced from morphological and structural analyses. Power dependent analysis of the photoluminescence intensity under continuous excitation reveals a conventional power law with an exponent close to 1, in agreement with the type II nature of the emission. We show that Ge-NCs exhibit much lower quantum efficiency than Si-NCs due to non-radiative interface states. Low quantum efficiency is also obtained when NCs have been exposed to air before capping, even if the exposure time is very short. Our results indicate that a reduction of the non-radiative surface states is a key strategy step in producing small NCs with increased PL emission for a variety of applications. The red-PL band is then an effective tool for the quality assessment of NCs based structures.

Integration of an Axcelis Optima HD Single Wafer High Current Implanter for p- and n-S/D Implants in an Existing Batch Implanter Production Line

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmeide, Matthias; Kontratenko, Serguei; Krimbacher, Bernhard

2008-11-03

This paper is focused on the integration and qualification of an Axcelis Optima HD single wafer high current spot beam implanter in an existing 200 mm production line with different types of Axcelis batch implanters for high current applications. Both the design of the beamline and the beam shape are comparable between single wafer and batch high current spot beam implanters. In contrast to the single wafer high current ribbon beam implanter, energy contamination is not a concern for the considered spot beam tool because the drift mode can be used down to energies in the 2 keV region. Themore » most important difference between single wafer and batch high current implanters is the significantly higher dose rate and, therefore, the higher damage rate for the single wafer tool due to the different scanning architecture. The results of the integration of high dose implantations, mainly for p- and n-S/D formation, for DRAM 110 nm without pre-amorphization implantation (PAI), CMOS Logic from around 250 nm down to 90 nm without and with PAI, are presented and discussed. Dopant concentration profile analysis using SIMS was performed for different technologies and implantation conditions. The impurity activation was measured using sheet resistance and in some cases spreading resistance technique was applied. The amorphous layer thickness was measured using TEM. Finally, device data are presented in combination with dose, energy and beam current variations. The results have shown that the integration of implantation processes into crystalline structure without PAI is more complex and time consuming than implantations into amorphous layer where the damage difference due to the different dose rates is negligible.« less

Iron silicide formation at different layers of (Fe/Si)3 multilayered structures determined by conversion electron Mössbauer spectroscopy

NASA Astrophysics Data System (ADS)

Badía-Romano, L.; Rubín, J.; Magén, C.; Bürgler, D. E.; Bartolomé, J.

2014-07-01

The morphology and the quantitative composition of the Fe-Si interface layer forming at each Fe layer of a (Fe/Si)3 multilayer have been determined by means of conversion electron Mössbauer spectroscopy (CEMS) and high-resolution transmission electron microscopy (HRTEM). For the CEMS measurements, each layer was selected by depositing the Mössbauer active 57Fe isotope with 95% enrichment. Samples with Fe layers of nominal thickness dFe = 2.6 nm and Si spacers of dSi = 1.5 nm were prepared by thermal evaporation onto a GaAs(001) substrate with an intermediate Ag(001) buffer layer. HRTEM images showed that Si layers grow amorphous and the epitaxial growth of the Fe is good only for the first deposited layer. The CEMS spectra show that at all Fe/Si and Si/Fe interfaces a paramagnetic c-Fe1-xSi phase is formed, which contains 16% of the nominal Fe deposited in the Fe layer. The bottom Fe layer, which is in contact with the Ag buffer, also contains α-Fe and an Fe1-xSix alloy that cannot be attributed to a single phase. In contrast, the other two layers only comprise an Fe1-xSix alloy with a Si concentration of ≃0.15, but no α-Fe.

Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon

NASA Astrophysics Data System (ADS)

Murata, H.; Toko, K.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

2017-01-01

Multilayer graphene (MLG) growth on arbitrary substrates is desired for incorporating carbon wiring and heat spreaders into electronic devices. We investigated the metal-induced layer exchange growth of a sputtered amorphous C layer using Ni as a catalyst. A MLG layer uniformly formed on a SiO2 substrate at 600 °C by layer exchange between the C and Ni layers. Raman spectroscopy and electron microscopy showed that the resulting MLG layer was highly oriented and contained relatively few defects. The present investigation will pave the way for advanced electronic devices integrated with carbon materials.

Electrooptical properties and structural features of amorphous ITO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amosova, L. P., E-mail: l-amosova@mail.ru

2015-03-15

Thin indium-tin oxide (ITO) films are deposited onto cold substrates by magnetron-assisted sputtering. The dependences of the structural, electrical, and optical properties of the films on the oxygen content in the atmosphere of sputtering and the growth rate are studied. It is shown that, if the substrate temperature is no higher than the ITO crystallization temperature and the conditions of growth deviate from the optimal relationship between the oxygen pressure and the growth rate, the resistance of the layers can be six or seven orders of magnitude higher than the resistance of conducting amorphous layers and reach hundreds of megaohms.more » At the same time, the optical properties of insulating layers in the visible spectral region are completely identical to the properties of the conducing amorphous modification. A conceptual model of defects responsible for the insulating properties of amorphous ITO is proposed.« less

Electron microscopy observation of TiO2 nanocrystal evolution in high-temperature atomic layer deposition.

PubMed

Shi, Jian; Li, Zhaodong; Kvit, Alexander; Krylyuk, Sergiy; Davydov, Albert V; Wang, Xudong

2013-01-01

Understanding the evolution of amorphous and crystalline phases during atomic layer deposition (ALD) is essential for creating high quality dielectrics, multifunctional films/coatings, and predictable surface functionalization. Through comprehensive atomistic electron microscopy study of ALD TiO2 nanostructures at designed growth cycles, we revealed the transformation process and sequence of atom arrangement during TiO2 ALD growth. Evolution of TiO2 nanostructures in ALD was found following a path from amorphous layers to amorphous particles to metastable crystallites and ultimately to stable crystalline forms. Such a phase evolution is a manifestation of the Ostwald-Lussac Law, which governs the advent sequence and amount ratio of different phases in high-temperature TiO2 ALD nanostructures. The amorphous-crystalline mixture also enables a unique anisotropic crystal growth behavior at high temperature forming TiO2 nanorods via the principle of vapor-phase oriented attachment.

Pair distribution functions of amorphous organic thin films from synchrotron X-ray scattering in transmission mode

DOE PAGES

Shi, Chenyang; Teerakapibal, Rattavut; Yu, Lian; ...

2017-07-10

Using high-brilliance high-energy synchrotron X-ray radiation, for the first time the total scattering of a thin organic glass film deposited on a strongly scattering inorganic substrate has been measured in transmission mode. The organic thin film was composed of the weakly scattering pharmaceutical substance indomethacin in the amorphous state. The film was 130 µm thick atop a borosilicate glass substrate of equal thickness. The atomic pair distribution function derived from the thin-film measurement is in excellent agreement with that from bulk measurements. This ability to measure the total scattering of amorphous organic thin films in transmission will enable accurate in situmore » structural studies for a wide range of materials.« less

Co-based amorphous thin films on silicon with soft magnetic properties

NASA Astrophysics Data System (ADS)

Masood, Ansar; McCloskey, P.; Mathúna, Cian Ó.; Kulkarni, S.

2018-05-01

The present work investigates the emergence of multiple modes in the high-frequency permeability spectrum of Co-Zr-Ta-B amorphous thin films. Amorphous thin films of different thicknesses (t=100-530 nm) were deposited by DC magnetron sputtering. Their static and dynamic soft magnetic properties were investigated to explore the presence of multi-magnetic phases in the films. A two-phase magnetic behavior of the thicker films (≥333 nm) was revealed by the in-plane hysteresis loops. Multiple resonance peaks were observed in the high-frequency permeability spectrum of the thicker films. The thickness dependent multiple resonance peaks below the main ferromagnetic resonance (FMR) can be attributed to the two-phase magnetic behaviors of the films.

Pair distribution functions of amorphous organic thin films from synchrotron X-ray scattering in transmission mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Chenyang; Teerakapibal, Rattavut; Yu, Lian

2017-07-10

Using high-brilliance high-energy synchrotron X-ray radiation, for the first time the total scattering of a thin organic glass film deposited on a strongly scattering inorganic substrate has been measured in transmission mode. The organic thin film was composed of the weakly scattering pharmaceutical substance indomethacin in the amorphous state. The film was 130 µm thick atop a borosilicate glass substrate of equal thickness. The atomic pair distribution function derived from the thin-film measurement is in excellent agreement with that from bulk measurements. This ability to measure the total scattering of amorphous organic thin films in transmission will enable accuratein situstructuralmore » studies for a wide range of materials.« less

Laws controlling crystallization and melting in bulk polymers

NASA Astrophysics Data System (ADS)

Strobl, Gert

2007-03-01

When the fundamentals of the structure of semi-crystalline polymers - layer-like crystallites with fold surfaces being embedded in an amorphous matrix - were revealed in the Fifties, considerations about the mechanism of formation started immediately. In the Sixties and Seventies, they became a major field of research and a focus of interest. In the years which followed the approach put forward by Hoffman, Lauritzen and their co-workers [1] gained superiority. The picture envisaged by the treatment - a crystalline lamella with an ordered fold surface and smooth lateral faces, growing layer by layer with a secondary nucleation as rate determining step - is easy to grasp and yields simple relationships. Supercooling below the equilibrium melting point Tf^∞ is the control parameter determining both the thickness dc and the lateral growth rate of the crystallites G. Experiments carried out during the last decade provided new insights and are now completely changing the understanding. They showed in particular - that dc is inversely proportional to the distance to a temperature Tc^∞ distinctly above Tf^∞- that the activation energy determining G diverges at a temperature Tzero clearly below Tf^∞.Further simple relationships concern- recrystallization processes: dc is again inversely proportional to the distance to Tc^∞- the extension of ordered regions within the lamellar crystallites: it is proportional to dc. We interpret the observations as indication that the pathway followed in the growth of polymer crystallites includes an intermediate phase of mesomorphic character. A thin layer with mesomorphic inner structure forms between the lateral crystal face and the melt, stabilized by epitaxial forces. The first step in the growth process is an attachment of chain sequences from the melt onto the growth face of the mesomorphic layer. The high mobility of the chains in the layer allows a spontaneous thickening, up to a critical thickness, where the layer solidifies under formation of block-like crystallites. The last step is a perfectioning of the crystallites, leading to a further stabilization. We constructed a thermodynamic scheme dealing with the transitions between melt, mesomorphic layers and lamellar crystallites, assuming for the latter ones that they exist both in an initial native and a final stabilized form. Tc^∞ and Tzero are identified with the temperatures Tmc and Tam of the (hidden) transitions mesomorphic -> crystalline and amorphous-> mesomorphic, respectively. Application of the scheme in a quantitative evaluation of small angle X-ray scattering and calorimetric results yields the equilibrium transition temperatures between the various phases, latent heats of transition and surface free energies [2]. [1] J.D Hoffman, G.T Davis, and J.I. Lauritzen. In Treatise on Solid State Chemistry Vol.3, N.B.Hannay Ed., page 497. Plenum, 1976. [2] G. Strobl.Eur.Phys.J.E, 18:295, 2005.

Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

NASA Astrophysics Data System (ADS)

Mandal, Aparajita; Kole, Arindam; Dasgupta, Arup; Chaudhuri, Partha

2016-11-01

Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel-Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

1995-01-01

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Fabrication of metallic glass structures

DOEpatents

Cline, Carl F.

1986-01-01

Amorphous metal powders or ribbons are fabricated into solid shapes of appreciable thickness by the application of compaction energy. The temperature regime wherein the amorphous metal deforms by viscous flow is measured. The metal powders or ribbons are compacted within the temperature range.

Fabrication of metallic glass structures

DOEpatents

Cline, C.F.

1983-10-20

Amorphous metal powders or ribbons are fabricated into solid shapes of appreciable thickness by the application of compaction energy. The temperature regime wherein the amorphous metal deforms by viscous flow is measured. The metal powders or ribbons are compacted within the temperature regime.

Localization of vibrational modes leads to reduced thermal conductivity of amorphous heterostructures

NASA Astrophysics Data System (ADS)

Giri, Ashutosh; Donovan, Brian F.; Hopkins, Patrick E.

2018-05-01

We investigate the vibrational heat transfer mechanisms in amorphous Stillinger-Weber silicon and germanium-based alloys and heterostructures via equilibrium and nonequilibrium molecular dynamics simulations along with lattice dynamics calculations. We find that similar to crystalline alloys, amorphous alloys demonstrate large size effects in thermal conductivity, while layering the constituent materials into superlattice structures leads to length-independent thermal conductivities. The thermal conductivity of an amorphous SixGe1 -x alloy reduces by as much as ˜53 % compared to the thermal conductivity of amorphous silicon; compared to the larger reduction in crystalline phases due to alloying, we show that compositional disorder rather than structural disorder has a larger impact on the thermal conductivity reduction. Our thermal conductivity predictions for a-Si/a-Ge superlattices suggest that the alloy limit in amorphous SiGe-based structures can be surpassed with interface densities above ˜0.35 nm-1 . We attribute the larger reduction in thermal conductivity of layered Si/Ge heterostructures to greater localization of modes at and around the cutoff frequency of the softer layer as demonstrated via lattice dynamics calculations and diffusivities of individual eigenmodes calculated according to the Allen-Feldman theory [P. B. Allen and J. L. Feldman, Phys. Rev. B 48, 12581 (1993), 10.1103/PhysRevB.48.12581] for our amorphous SiGe-based alloys and superlattice structures.

Deposition, Heat Treatment And Characterization of Two Layer Bioactive Coatings on Cylindrical PEEK

PubMed Central

Durham, John W.; Rabiei, Afsaneh

2015-01-01

Polyether ether ketone (PEEK) rods were coated via ion beam asssited deposition (IBAD) at room temperature. The coating consists of a two-layer design of yttria-stabilized zirconia (YSZ) as a heat-protection layer, and hydroxyapatite (HA) as a top layer to increase bioactivity. A rotating substrate holder was designed to deposit an even coating on the cylindrical surface of PEEK rods; the uniformity is verified by cross-sectional measurements using scanning electron microscopy (SEM). Deposition is followed by heat treatment of the coating using microwave annealing and autoclaving. Transmission electron microscopy (TEM) showed a dense, uniform columnar grain structure in the YSZ layer that is well bonded to the PEEK substrate, while the calcium phosphate layer was amorphous and pore-free in its as-deposited state. Subsequent heat treatment via microwave energy introduced HA crystallization in the calcium phosphate layer and additional autoclaving further expanded the crystallization of the HA layer. Chemical composition evaluation of the coating indicated the Ca/P ratios of the HA layer to be near that of stoichiometric HA, with minor variations through the HA layer thickness. The adhesion strength of as-deposited HA/YSZ coatings on smooth, polished PEEK surfaces was mostly unaffected by microwave heat treatment, but decreased with additional autoclave treatment. Increasing surface roughness showed improvement of bond strength. PMID:27713592

Growth process of hydrogenated amorphous carbon films synthesized by atmospheric pressure plasma enhanced CVD using nitrogen and helium as a dilution gas

NASA Astrophysics Data System (ADS)

Mori, Takanori; Sakurai, Takachika; Sato, Taiki; Shirakura, Akira; Suzuki, Tetsuya

2016-04-01

Hydrogenated amorphous carbon films with various thicknesses were synthesized by dielectric barrier discharge-based plasma deposition under atmospheric pressure diluted with nitrogen (N2) and helium (He) at various pulse frequencies. The C2H2/N2 film showed cauliflower-like-particles that grew bigger with the increase in film’s thickness. At 5 kHz, the film with a thickness of 2.7 µm and smooth surface was synthesized. On the other hand, the films synthesized from C2H2/He had a smooth surface and was densely packed with domed particles. The domed particles extended with the increase in the film thickness, enabling it to grow successfully to 37 µm with a smooth surface.

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

2018-05-01

Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

Investigations of YBa2Cu3O y films sputtered onto a substrate of amorphous quartz with a platinum buffer layer

NASA Astrophysics Data System (ADS)

Blinova, Yu. V.; Snigirev, O. V.; Porokhov, N. V.; Evlashin, S. A.

2017-10-01

Results of investigations using X-ray diffraction and scanning electron microscopy of composite materials made from YBa2Cu3O y films sputtered (using various regimes) onto a substrate of amorphous quartz with a platinum buffer layer, have been given.

Characterization of carbon ion implantation induced graded microstructure and phase transformation in stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Kai; Wang, Yibo; Li, Zhuguo, E-mail: lizg@sjtu.edu.cn

Austenitic stainless steel 316L is ion implanted by carbon with implantation fluences of 1.2 × 10{sup 17} ions-cm{sup −} {sup 2}, 2.4 × 10{sup 17} ions-cm{sup −} {sup 2}, and 4.8 × 10{sup 17} ions-cm{sup −} {sup 2}. The ion implantation induced graded microstructure and phase transformation in stainless steel is investigated by X-ray diffraction, X-ray photoelectron spectroscopy and high resolution transmission electron microscopy. The corrosion resistance is evaluated by potentiodynamic test. It is found that the initial phase is austenite with a small amount of ferrite. After low fluence carbon ion implantation, an amorphous layer and ferrite phase enrichedmore » region underneath are formed. Nanophase particles precipitate from the amorphous layer due to energy minimization and irradiation at larger ion implantation fluence. The morphology of the precipitated nanophase particles changes from circular to dumbbell-like with increasing implantation fluence. The corrosion resistance of stainless steel is enhanced by the formation of amorphous layer and graphitic solid state carbon after carbon ion implantation. - Highlights: • Carbon implantation leads to phase transformation from austenite to ferrite. • The passive film on SS316L becomes thinner after carbon ion implantation. • An amorphous layer is formed by carbon ion implantation. • Nanophase precipitate from amorphous layer at higher ion implantation fluence. • Corrosion resistance of SS316L is improved by carbon implantation.« less

Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements

PubMed Central

Sánchez, Pascal; Lorenzo, Olaya; Menéndez, Armando; Menéndez, Jose Luis; Gomez, David; Pereiro, Rosario; Fernández, Beatriz

2011-01-01

The determination of optical parameters, such as absorption and extinction coefficients, refractive index and the bandgap energy, is crucial to understand the behavior and final efficiency of thin film solar cells based on hydrogenated amorphous silicon (a-Si:H). The influence of small variations of the gas flow rates used for the preparation of the p-a-SiC:H layer on the bandgap energy, as well as on the dopant elements concentration, thickness and conductivity of the p-layer, is investigated in this work using several complementary techniques. UV-NIR spectrophotometry and ellipsometry were used for the determination of bandgap energies of four p-a-SiC:H thin films, prepared by using different B2H6 and SiH4 fluxes (B2H6 from 12 sccm to 20 sccm and SiH4 from 6 sccm to 10 sccm). Moreover, radiofrequency glow discharge optical emission spectrometry technique was used for depth profiling characterization of p-a-SiC:H thin films and valuable information about dopant elements concentration and distribution throughout the coating was found. Finally, a direct relationship between the conductivity of p-a-SiC:H thin films and the dopant elements concentration, particularly boron and carbon, was observed for the four selected samples. PMID:21731436

Preparation and Characterization of WS2@SiO2 and WS2@PANI Core-Shell Nanocomposites

PubMed Central

Sade, Hagit

2018-01-01

Two tungsten disulfide (WS2)-based core-shell nanocomposites were fabricated using readily available reagents and simple procedures. The surface was pre-treated with a surfactant couple in a layer-by-layer approach, enabling good dispersion of the WS2 nanostructures in aqueous media and providing a template for the polymerization of a silica (SiO2) shell. After a Stöber-like reaction, a conformal silica coating was achieved. Inspired by the resulting nanocomposite, a second one was prepared by reacting the surfactant-modified WS2 nanostructures with aniline and an oxidizing agent in an aqueous medium. Here too, a conformal coating of polyaniline (PANI) was obtained, giving a WS2@PANI nanocomposite. Both nanocomposites were analyzed by electron microscopy, energy dispersive X-ray spectroscopy (EDS) and FTIR, verifying the core-shell structure and the character of shells. The silica shell was amorphous and mesoporous and the surface area of the composite increases with shell thickness. Polyaniline shells slightly differ in their morphologies dependent on the acid used in the polymerization process and are amorphous like the silica shell. Electron paramagnetic resonance (EPR) spectroscopy of the WS2@PANI nanocomposite showed variation between bulk PANI and the PANI shell. These two nanocomposites have great potential to expand the use of transition metals dichalcogenides (TMDCs) for new applications in different fields. PMID:29534426

Buried oxide layer in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warner, Ellis J.; Gladfelter, Wayne L., E-mail: wlg@umn.edu; Johnson, Forrest

Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. %more » Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.« less

Atomistic simulation of damage accumulation and amorphization in Ge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gomez-Selles, Jose L., E-mail: joseluis.gomezselles@imdea.org; Martin-Bragado, Ignacio; Claverie, Alain

2015-02-07

Damage accumulation and amorphization mechanisms by means of ion implantation in Ge are studied using Kinetic Monte Carlo and Binary Collision Approximation techniques. Such mechanisms are investigated through different stages of damage accumulation taking place in the implantation process: from point defect generation and cluster formation up to full amorphization of Ge layers. We propose a damage concentration amorphization threshold for Ge of ∼1.3 × 10{sup 22} cm{sup −3} which is independent on the implantation conditions. Recombination energy barriers depending on amorphous pocket sizes are provided. This leads to an explanation of the reported distinct behavior of the damage generated by different ions.more » We have also observed that the dissolution of clusters plays an important role for relatively high temperatures and fluences. The model is able to explain and predict different damage generation regimes, amount of generated damage, and extension of amorphous layers in Ge for different ions and implantation conditions.« less

Integration of perovskite oxide dielectrics into complementary metal-oxide-semiconductor capacitor structures using amorphous TaSiN as oxygen diffusion barrier

NASA Astrophysics Data System (ADS)

Mešić, Biljana; Schroeder, Herbert

2011-09-01

The high permittivity perovskite oxides have been intensively investigated for their possible application as dielectric materials for stacked capacitors in dynamic random access memory circuits. For the integration of such oxide materials into the CMOS world, a conductive diffusion barrier is indispensable. An optimized stack p++-Si/Pt/Ta21Si57N21/Ir was developed and used as the bottom electrode for the oxide dielectric. The amorphous TaSiN film as oxygen diffusion barrier showed excellent conductive properties and a good thermal stability up to 700 °C in oxygen ambient. The additional protective iridium layer improved the surface roughness after annealing. A 100-nm-thick (Ba,Sr)TiO3 film was deposited using pulsed laser deposition at 550 °C, showing very promising properties for application; the maximum relative dielectric constant at zero field is κ ≈ 470, and the leakage current density is below 10-6 A/cm2 for fields lower then ± 200 kV/cm, corresponding to an applied voltage of ± 2 V.

Thin Bioactive Zn Substituted Hydroxyapatite Coating Deposited on Ultrafine Grained Titanium Substrate: Structure Analysis

NASA Astrophysics Data System (ADS)

Prosolov, Konstantin A.; Belyavskaya, Olga A.; Muehle, Uwe; Sharkeev, Yurii P.

2018-02-01

Nanocrystalline Zn substituted hydroxyapatite coatings were deposited by radiofrequency magnetron sputtering on the surface of ultrafine-grained titanium substrates. Cross section transmission electron microscopy provided information about the morphology and texture of the thin film while in-column energy dispersive X-ray analysis confirmed the presence of Zn in the coating. The Zn substituted hydroxyapatite coating was formed by an equiaxed polycrystalline grain structure. Effect of substrate crystallinity on the structure of deposited coating is discussed. An amorphous TiO2 sublayer of 8 nm thickness was detected in the interface between the polycrystalline coating and the Ti substrate. Its appearance in the amorphous state is attributed to prior to deposition etching of the substrate and subsequent condensation of oxygen-containing species sputtered from the target. This layer contributes to the high coating-to-substrate adhesion. The major P-O vibrational modes of high intensity were detected by Raman spectroscopy. The Zn substituted hydroxyapatite could be a material of choice when antibacterial osteoconductive coating with a possibility of withstanding mechanical stress during implantation and service is needed.

Weak interactions between water and clathrate-forming gases at low pressures

DOE PAGES

Thürmer, Konrad; Yuan, Chunqing; Kimmel, Greg A.; ...

2015-07-17

Using scanning probe microscopy and temperature programed desorption we examined the interaction between water and two common clathrate-forming gases, methane and isobutane, at low temperature and low pressure. Water co-deposited with up to 10 –1 mbar methane or 10 –5 mbar isobutane at 140 K onto a Pt(111) substrate yielded pure crystalline ice, i.e., the exposure to up to ~ 10 7 gas molecules for each deposited water molecule did not have any detectable effect on the growing films. Exposing metastable, less than 2 molecular layers thick, water films to 10 –5 mbar methane does not alter their morphology, suggestingmore » that the presence of the Pt(111) surface is not a strong driver for hydrate formation. This weak water–gas interaction at low pressures is supported by our thermal desorption measurements from amorphous solid water and crystalline ice where 1 ML of methane desorbs near ~ 43 K and isobutane desorbs near ~ 100 K. As a result, similar desorption temperatures were observed for desorption from amorphous solid water.« less

Alumina-supported sub-nanometer Pt 10 clusters: Amorphization and role of the support material in a highly active CO oxidation catalyst

DOE PAGES

Yin, Chunrong; Negreiros, Fabio R.; Barcaro, Giovanni; ...

2017-02-03

Catalytic CO oxidation is unveiled on size-selected Pt 10 clusters deposited on two very different ultrathin (≈0.5–0.7 nm thick) alumina films: (i) a highly ordered alumina obtained under ultra-high vacuum (UHV) by oxidation of the NiAl(110) surface and (ii) amorphous alumina obtained by atomic layer deposition (ALD) on a silicon chip that is a close model of real-world supports. Notably, when exposed to realistic reaction conditions, the Pt 10/UHV-alumina system undergoes a morphological transition in both the clusters and the substrate, and becomes closely akin to Pt 10/ALD-alumina, thus reconciling UHV-type surface-science and real-world experiments. The Pt 10 clusters, thoroughlymore » characterized via combined experimental techniques and theoretical analysis, exhibit among the highest CO oxidation activity per Pt atom reported for CO oxidation catalysts, due to the interplay of ultra-small size and support effects. Lastly, a coherent interdisciplinary picture then emerges for this catalytic system.« less

Multifunctional Hybrid Multilayer Gate Dielectrics with Tunable Surface Energy for Ultralow-Power Organic and Amorphous Oxide Thin-Film Transistors.

PubMed

Byun, Hye-Ran; You, Eun-Ah; Ha, Young-Geun

2017-03-01

For large-area, printable, and flexible electronic applications using advanced semiconductors, novel dielectric materials with excellent capacitance, insulating property, thermal stability, and mechanical flexibility need to be developed to achieve high-performance, ultralow-voltage operation of thin-film transistors (TFTs). In this work, we first report on the facile fabrication of multifunctional hybrid multilayer gate dielectrics with tunable surface energy via a low-temperature solution-process to produce ultralow-voltage organic and amorphous oxide TFTs. The hybrid multilayer dielectric materials are constructed by iteratively stacking bifunctional phosphonic acid-based self-assembled monolayers combined with ultrathin high-k oxide layers. The nanoscopic thickness-controllable hybrid dielectrics exhibit the superior capacitance (up to 970 nF/cm 2 ), insulating property (leakage current densities <10 -7 A/cm 2 ), and thermal stability (up to 300 °C) as well as smooth surfaces (root-mean-square roughness <0.35 nm). In addition, the surface energy of the hybrid multilayer dielectrics are easily changed by switching between mono- and bifunctional phosphonic acid-based self-assembled monolayers for compatible fabrication with both organic and amorphous oxide semiconductors. Consequently, the hybrid multilayer dielectrics integrated into TFTs reveal their excellent dielectric functions to achieve high-performance, ultralow-voltage operation (< ± 2 V) for both organic and amorphous oxide TFTs. Because of the easily tunable surface energy, the multifunctional hybrid multilayer dielectrics can also be adapted for various organic and inorganic semiconductors, and metal gates in other device configurations, thus allowing diverse advanced electronic applications including ultralow-power and large-area electronic devices.

Bulk metallic glass matrix composites: Processing, microstructure, and application as a kinetic energy penetrator

NASA Astrophysics Data System (ADS)

Dandliker, Richard B.

The development of alloys with high glass forming ability allows fabrication of bulk samples of amorphous metal. This capability makes these materials available for applications which require significant material thickness in all three dimensions. Superior mechanical properties and advantages in processing make metallic glass a choice candidate as a matrix material for composites. This study reports techniques for making composites by melt-infiltration casting using the alloy Zrsb{41.2}Tisb{13.8}Cusb{12.5}Nisb{10.0}Besb{22.5} (VitreloyspTM 1) as a matrix material. Composite rods 5 cm in length and 7 mm in diameter were made and found to have a nearly fully amorphous matrix; there was less than 3 volume percent crystallized matrix material. The samples were reinforced by continuous metal wires, tungsten powder, or silicon carbide particulate preforms. The most easily processed samples were made with uniaxially aligned tungsten and carbon steel continuous wire reinforcement; the majority of the analysis presented is of these samples. The measured porosity was typically less than 3%. The results also indicate necessary guidelines for developing processing techniques for large scale production, new reinforcement materials, and other metallic glass compositions. Analysis of the microstructure of the tungsten wire and steel wire reinforced composites was performed by x-ray diffraction, scanning electron microscopy, scanning Auger microscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy. The most common phase in the crystallized matrix is most likely a Laves phase with the approximate formula Besb{12}Zrsb3TiNiCu. In tungsten-reinforced composites, a crystalline reaction layer 240 nm thick of tungsten nanocrystals in an amorphous matrix formed. In the steel reinforced composites, the reaction layer was primarily composed of a mixed metal carbide, mainly ZrC. One promising application of the metallic glass matrix composite is as a kinetic energy penetrator material. Ballistic tests show that a composite of 80 volume percent uniaxially aligned tungsten wires and a VitreloyspTM 1 matrix has self-sharpening behavior, which is a necessary characteristic of superior penetrator materials. Small-scale tests with both aluminum and steel targets show that this composite performs better than tungsten heavy alloys typically used for penetrator applications, and comparably with depleted uranium.

Superconducting Metallic Glass Transition-Edge-Sensors

NASA Technical Reports Server (NTRS)

Hays, Charles C. (Inventor)

2013-01-01

A superconducting metallic glass transition-edge sensor (MGTES) and a method for fabricating the MGTES are provided. A single-layer superconducting amorphous metal alloy is deposited on a substrate. The single-layer superconducting amorphous metal alloy is an absorber for the MGTES and is electrically connected to a circuit configured for readout and biasing to sense electromagnetic radiation.

Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-07-09

A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

Application of amorphous carbon based materials as antireflective coatings on crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

da Silva, D. S.; Côrtes, A. D. S.; Oliveira, M. H.; Motta, E. F.; Viana, G. A.; Mei, P. R.; Marques, F. C.

2011-08-01

We report on the investigation of the potential application of different forms of amorphous carbon (a-C and a-C:H) as an antireflective coating for crystalline silicon solar cells. Polymeric-like carbon (PLC) and hydrogenated diamond-like carbon films were deposited by plasma enhanced chemical vapor deposition. Tetrahedral amorphous carbon (ta-C) was deposited by the filtered cathodic vacuum arc technique. Those three different amorphous carbon structures were individually applied as single antireflective coatings on conventional (polished and texturized) p-n junction crystalline silicon solar cells. Due to their optical properties, good results were also obtained for double-layer antireflective coatings based on PLC or ta-C films combined with different materials. The results are compared with a conventional tin dioxide (SnO2) single-layer antireflective coating and zinc sulfide/magnesium fluoride (ZnS/MgF2) double-layer antireflective coatings. An increase of 23.7% in the short-circuit current density, Jsc, was obtained using PLC as an antireflective coating and 31.7% was achieved using a double-layer of PLC with a layer of magnesium fluoride (MgF2). An additional increase of 10.8% was obtained in texturized silicon, representing a total increase (texturization + double-layer) of about 40% in the short-circuit current density. The potential use of these materials are critically addressed considering their refractive index, optical bandgap, absorption coefficient, hardness, chemical inertness, and mechanical stability.

Protective layer formation on magnesium in cell culture medium.

PubMed

Wagener, V; Virtanen, S

2016-06-01

In the past, different studies showed that hydroxyapatite (HA) or similar calcium phosphates can be precipitated on Mg during immersion in simulated body fluids. However, at the same time, in most cases a dark grey or black layer is built under the white HA crystals. This layer seems to consist as well of calcium phosphates. Until now, neither the morphology nor its influence on Mg corrosion have been investigated in detail. In this work commercially pure magnesium (cp) was immersed in cell culture medium for one, three and five days at room temperature and in the incubator (37 °C, 5% CO2). In addition, the influence of proteins on the formation of a corrosion layer was investigated by adding 20% of fetal calf serum (FCS) to the cell culture medium in the incubator. In order to analyze the formed layers, SEM images of cross sections, X-ray Photoelectron Spectroscopy (XPS), X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDX) and Fourier Transformed Infrared Spectroscopy (FTIR) measurements were carried out. Characterization of the corrosion behavior was achieved by electrochemical impedance spectroscopy (EIS) and by potentio-dynamic polarization in Dulbecco's Modified Eagle's Medium (DMEM) at 37°C. Surface analysis showed that all formed layers consist mainly of amorphous calcium phosphate compounds. For the immersion at room temperature the Ca/P ratio indicates the formation of HA, while in the incubator probably pre-stages to HA are formed. The different immersion conditions lead to a variation in layer thicknesses. However, electrochemical characterization shows that the layer thickness does not influence the corrosion resistance of magnesium. The main influencing factor for the corrosion behavior is the layer morphology. Thus, immersion at room temperature leads to the highest corrosion protection due to the formation of a compact outer layer. Layers formed in the incubator show much worse performances due to completely porous structures. The existence of proteins in DMEM seems to hinder the formation of a corrosion layer. However, protein adsorption leads to similar results as concerns corrosion protection as the formed calcium phosphate layer. Copyright © 2016 Elsevier B.V. All rights reserved.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

PubMed

Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-17

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

PubMed Central

2012-01-01

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

Influences of ultra-thin Ti seed layers on the dewetting phenomenon of Au films deposited on Si oxide substrates

NASA Astrophysics Data System (ADS)

Kamiko, Masao; Kim, So-Mang; Jeong, Young-Seok; Ha, Jae-Ho; Koo, Sang-Mo; Ha, Jae-Geun

2018-05-01

The influences of a Ti seed layer (1 nm) on the dewetting phenomenon of Au films (5 nm) grown onto amorphous SiO2 substrates have been studied and compared. Atomic force microscopy results indicated that the introduction of Ti between the substrate and Au promoted the dewetting phenomenon. X-ray diffraction measurements suggested that the initial deposition of Ti promoted crystallinity of Au. A series of Auger electron spectroscopy and X-ray photoelectron spectroscopy results revealed that Ti transformed to a Ti oxide layer by reduction of the amorphous SiO2 substrate surface, and that the Ti seed layer remained on the substrate, without going through the dewetting process during annealing. We concluded that the enhancement of Au dewetting and the improvement in crystallinity of Au by the insertion of Ti could be attributed to the fact that Au location was changed from the surface of the amorphous SiO2 substrate to that of the Ti oxide layer.

The use of ionic salt dyes as amorphous, thermally stable emitting layers in organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Chondroudis, Konstantinos; Mitzi, David B.

2000-01-01

The conversion of two neutral dye molecules (D) to ionic salts (H2N-D-NH2ṡ2HX) and their utilization as emitting layers in organic light-emitting diodes (OLEDs) is described. The dye salts, AEQTṡ2HCl and APTṡ2HCl, can be deposited as amorphous films using conventional evaporation techniques. X-ray diffraction and scanning electron microscopy analysis, coupled with thermal annealing studies, demonstrate the resistance of the films to crystallization. This stability is attributed to strong ionic forces between the relatively rigid molecules. OLEDs incorporating such salts for emitting layers exhibit better thermal stability compared with devices made from the corresponding neutral dyes (H2N-D-NH2). These results suggest that ionic salts may more generally enable the formation of thermally stable, amorphous emitting, and charge transporting layers.

XAFS atomistic insight of the oxygen gettering in Ti/HfO 2 based OxRRAM

NASA Astrophysics Data System (ADS)

Viennet, R.; Roussel, H.; Rapenne, L.; Deschanvres, J. L.; Renevier, H.; Jousseaume, V.; Jalaguier, E.; Proietti, M. G.

2018-05-01

Hafnia-based resistive memories technology has come to maturation and acceded to the market of nonvolatile memories. Nevertheless, the physical mechanisms involved in resistive switching are not yet fully understood and the numerous ab initio simulations studies have few many atomic-scale experimental counterparts. In this study we investigate the oxygen migration mechanism from an amorphous HfO2 layer to the Ti cap layer at a local scale before and after a thermal treatment. X-ray absorption spectroscopy at the Ti K edge and Hf LIII edge has been performed on samples as-deposited and annealed in Ar at 400 ∘C to mimic the back-end-of-line thermal budget (BEOL) of CMOS technology. The short-range Ti and Hf environments have been determined, showing that annealing promotes the migration of O from HfO2 to Ti, the amount of which is quantified. This provokes an expansion and an increase of atomic disorder in the Ti lattice. The nature of the oxygen gettering mechanism by the Ti metal is understood by comparing samples with increasing Ti-capping thickness. We show that the Ti getter effect has to be activated by thermal treatment and that the O diffusion takes place in a region of a few nanometers close to the Ti /HfO2 interface. Therefore, the thermal budget history and the Ti cap-layer thickness determine the oxygen vacancy content in the HfO2 layer, which in turn controls the electrical properties, especially the forming operation.

Buffer layers on metal alloy substrates for superconducting tapes

DOEpatents

Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

2004-06-29

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

Method of forming buried oxide layers in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Method of controllong the deposition of hydrogenated amorphous silicon and apparatus therefor

DOEpatents

Hanak, Joseph J.

1985-06-25

An improved method and apparatus for the controlled deposition of a layer of hydrogenated amorphous silicon on a substrate. Means is provided for the illumination of the coated surface of the substrate and measurement of the resulting photovoltage at the outermost layer of the coating. Means is further provided for admixing amounts of p type and n type dopants to the reactant gas in response to the measured photovoltage to achieve a desired level and type of doping of the deposited layer.

Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

PubMed Central

Wang, Fang-Hsing; Kuo, Hsin-Hui; Yang, Cheng-Fu; Liu, Min-Chu

2014-01-01

In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI. PMID:28788494

Interfacial phonon scattering and transmission loss in > 1 µm thick silicon-on-insulator thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Puqing; Lindsay, Lucas R.; Huang, Xi

Scattering of phonons at boundaries of a crystal (grains, surfaces, or solid/solid interfaces) is characterized by the phonon wavelength, the angle of incidence, and the interface roughness, as historically evaluated using a specularity parameter p formulated by Ziman [Electrons and Phonons (Clarendon Press, Oxford, 1960)]. This parameter was initially defined to determine the probability of a phonon specularly reflecting or diffusely scattering from the rough surface of a material. The validity of Ziman's theory as extended to solid/solid interfaces has not been previously validated. Here, to better understand the interfacial scattering of phonons and to test the validity of Ziman'smore » theory, we precisely measured the in-plane thermal conductivity of a series of Si films in silicon-on-insulator (SOI) wafers by time-domain thermoreflectance (TDTR) for a Si film thickness range of 1–10 μm and a temperature range of 100–300 K. The Si/SiO 2 interface roughness was determined to be 0.11±0.04nm using transmission electron microscopy (TEM). Furthermore, we compared our in-plane thermal conductivity measurements to theoretical calculations that combine first-principles phonon transport with Ziman's theory. Calculations using Ziman's specularity parameter significantly overestimate values from the TDTR measurements. We attribute this discrepancy to phonon transmission through the solid/solid interface into the substrate, which is not accounted for by Ziman's theory for surfaces. The phonons that are specularly transmitted into an amorphous layer will be sufficiently randomized by the time they come back to the crystalline Si layer, the effect of which is practically equivalent to a diffuse reflection at the interface. Finally, we derive a simple expression for the specularity parameter at solid/amorphous interfaces and achieve good agreement between calculations and measurement values.« less

Interfacial phonon scattering and transmission loss in > 1 µm thick silicon-on-insulator thin films

DOE PAGES

Jiang, Puqing; Lindsay, Lucas R.; Huang, Xi; ...

2018-05-17

Scattering of phonons at boundaries of a crystal (grains, surfaces, or solid/solid interfaces) is characterized by the phonon wavelength, the angle of incidence, and the interface roughness, as historically evaluated using a specularity parameter p formulated by Ziman [Electrons and Phonons (Clarendon Press, Oxford, 1960)]. This parameter was initially defined to determine the probability of a phonon specularly reflecting or diffusely scattering from the rough surface of a material. The validity of Ziman's theory as extended to solid/solid interfaces has not been previously validated. Here, to better understand the interfacial scattering of phonons and to test the validity of Ziman'smore » theory, we precisely measured the in-plane thermal conductivity of a series of Si films in silicon-on-insulator (SOI) wafers by time-domain thermoreflectance (TDTR) for a Si film thickness range of 1–10 μm and a temperature range of 100–300 K. The Si/SiO 2 interface roughness was determined to be 0.11±0.04nm using transmission electron microscopy (TEM). Furthermore, we compared our in-plane thermal conductivity measurements to theoretical calculations that combine first-principles phonon transport with Ziman's theory. Calculations using Ziman's specularity parameter significantly overestimate values from the TDTR measurements. We attribute this discrepancy to phonon transmission through the solid/solid interface into the substrate, which is not accounted for by Ziman's theory for surfaces. The phonons that are specularly transmitted into an amorphous layer will be sufficiently randomized by the time they come back to the crystalline Si layer, the effect of which is practically equivalent to a diffuse reflection at the interface. Finally, we derive a simple expression for the specularity parameter at solid/amorphous interfaces and achieve good agreement between calculations and measurement values.« less

Accounting for nanometer-thick adventitious carbon contamination in X-ray absorption spectra of carbon-based materials.

PubMed

Mangolini, Filippo; McClimon, J Brandon; Rose, Franck; Carpick, Robert W

2014-12-16

Near-edge X-ray absorption fine structure (NEXAFS) spectroscopy is a powerful technique for characterizing the composition and bonding state of nanoscale materials and the top few nanometers of bulk and thin film specimens. When coupled with imaging methods like photoemission electron microscopy, it enables chemical imaging of materials with nanometer-scale lateral spatial resolution. However, analysis of NEXAFS spectra is often performed under the assumption of structural and compositional homogeneity within the nanometer-scale depth probed by this technique. This assumption can introduce large errors when analyzing the vast majority of solid surfaces due to the presence of complex surface and near-surface structures such as oxides and contamination layers. An analytical methodology is presented for removing the contribution of these nanoscale overlayers from NEXAFS spectra of two-layered systems to provide a corrected photoabsorption spectrum of the substrate. This method relies on the subtraction of the NEXAFS spectrum of the overlayer adsorbed on a reference surface from the spectrum of the two-layer system under investigation, where the thickness of the overlayer is independently determined by X-ray photoelectron spectroscopy (XPS). This approach is applied to NEXAFS data acquired for one of the most challenging cases: air-exposed hard carbon-based materials with adventitious carbon contamination from ambient exposure. The contribution of the adventitious carbon was removed from the as-acquired spectra of ultrananocrystalline diamond (UNCD) and hydrogenated amorphous carbon (a-C:H) to determine the intrinsic photoabsorption NEXAFS spectra of these materials. The method alters the calculated fraction of sp(2)-hybridized carbon from 5 to 20% and reveals that the adventitious contamination can be described as a layer containing carbon and oxygen ([O]/[C] = 0.11 ± 0.02) with a thickness of 0.6 ± 0.2 nm and a fraction of sp(2)-bonded carbon of 0.19 ± 0.03. This method can be generally applied to the characterization of surfaces and interfaces in several research fields and technological applications.

Infrared Spectra and Band Strengths of Amorphous and Crystalline N2O

NASA Technical Reports Server (NTRS)

Hudson, R. L.; Loeffler, M. J.; Gerakines, P. A.

2017-01-01

Infrared transmission spectra from 4000 to 400 cm (exp -1), and associated band strengths and absorption coefficients, are presented for the first time for both amorphous and crystalline N2O. Changes in the spectra as a function of ice thickness and ice temperature are shown. New measurements of density, refractive index, and specific refraction are reported for amorphous and crystalline N2O. Comparisons are made to published results, and the most-likely reason for some recent disagreements in the literature is discussed. As with CO2, its isoelectronic congener, the formation of amorphous N2O is found to require greater care than the formation of amorphous solids from more-polar molecules.

Tunable broadband near-infrared absorber based on ultrathin phase-change material

NASA Astrophysics Data System (ADS)

Hu, Er-Tao; Gu, Tong; Guo, Shuai; Zang, Kai-Yan; Tu, Hua-Tian; Yu, Ke-Han; Wei, Wei; Zheng, Yu-Xiang; Wang, Song-You; Zhang, Rong-Jun; Lee, Young-Pak; Chen, Liang-Yao

2017-11-01

In this work, a tunable broadband near-infrared light absorber was designed and fabricated with a simple and lithography free approach by introducing an ultrathin phase-change material Ge2Sb2Te5 (GST) layer into the metal-dielectric multilayered film structure with the structure parameters as that: SiO2 (72.7 nm)/Ge2Sb2Te5 (6.0 nm)/SiO2 (70.2 nm)/Cu (>100.0 nm). The film structure exhibits a modulation depth of ∼72.6% and an extinction ratio of ∼8.8 dB at the wavelength of 1410 nm. The high light absorption (95%) of the proposed film structure at the wavelength of 450 nm in both of the amorphous and crystalline phase of GST, indicates that the intensity of the reflectance in the infrared region can be rapidly tuned by the blue laser pulses. The proposed planar layered film structure with layer thickness as the only controllable parameter and large reflectivity tuning range shows the potential for practical applications in near-infrared light modulation and absorption.

Novel fabrication method for 3D microstructures using surface-activated bonding and its application to micro-mechanical parts

NASA Astrophysics Data System (ADS)

Yamada, Takayuki; Takahashi, Mutsuya; Ozawa, Takashi; Tawara, Satoshi; Goto, Takayuki

2002-11-01

The purpose of this work is to demonstrate that a novel fabrication method for 3-D microstructures (FORMULA) is applicable to fabrication of micro mechanical parts with a large flexibility. This method is a kind of layer manufacturing method of thin films for metallic or dielectric microstructures using surface-activated bonding (SAB). The bonding interfaces of thin films are investigated by transmission electron microscope (TEM). Voids were observed at the interfaces of both pure aluminum films and Al-Cu alloy films. The ratio of void on the Al-Cu/Al-Cu interface is much larger than that of Al/Al interface, although the films have the same surface roughness of 3nm in Ra (average roughness). And approximately 10nm-thick amorphous intermediate layers were found at the interfaces. Furthermore, we have fabricated a micro gear of 900μm in diameter and 200μm in height, which is about ten times as large as our previous test pieces. Overhung structures such as a bridge structure and a cantilever were also fabricated without supporting layers beneath them.

Role of the Heat Sink Layer Ta for Ultrafast Spin Dynamic Process in Amorphous TbFeCo Thin Films

NASA Astrophysics Data System (ADS)

Ren, Y.; Zhang, Z. Z.; Min, T.; Jin, Q. Y.

The ultrafast demagnetization processes (UDP) in Ta (t nm)/TbFeCo (20 nm) films have been studied using the time-resolved magneto-optical Kerr effect (TRMOKE). With a fixed pump fluence of 2 mJ/cm2, for the sample without a Ta underlayer (t=0nm), we observed the UDP showing a two-step decay behavior, with a relatively longer decay time (τ2) around 3.0 ps in the second step due to the equilibrium of spin-lattice relaxation following the 4f occupation. As a 10nm Ta layer is deposited, the two-step demagnetization still exists while τ2 decreases to ˜1.9ps. Nevertheless, the second-step decay (τ2=0ps) disappears as the Ta layer thickness is increased up to 20 nm, only the first-step UDP occurs within 500 fs, followed by a fast recovery process. The rapid magnetization recovery rate strongly depends on the pump fluence. We infer that the Ta layer provides conduction electrons involving the thermal equilibrium of spin-lattice interaction and serves as heat bath taking away energy from spins of TbFeCo alloy film in UDP.

Unusual ZFC and FC magnetic behavior in thin Co multi-layered structure

NASA Astrophysics Data System (ADS)

Ben Dor, Oren; Yochelis, Shira; Felner, Israel; Paltiel, Yossi

2017-04-01

The observation of unusual magnetic phenomena in a Ni -based magnetic memory device ([4] O. Ben-Dor et al., 2013) encouraged us to conduct a systematic research on Co based multi-layered structure which contains a α-helix L polyalanine (AHPA-L) organic compound. The constant Co thickness is 7 nm and AHPA-L was also replaced by non-chiral 1-Decanethiol organic molecules. Both organic compounds were chemisorbed on gold by a thiol group. The dc magnetic field (H) was applied parallel and perpendicular to the surface layers. The perpendicular direction is the easy magnetization axis and along this orientation only, the zero-field-cooled (ZFC) plots exhibit a pronounced peak around 55-58 K. This peak is suppressed in the second ZFC and field-cooled (FC) runs performed shortly after the virgin ZFC one. Thus, around the peak position ZFC>FC a phenomenon seldom observed. This peak reappears after measuring the same material six months later. This behavior appears in layers with the non-chiral 1-Decanethiol and it is very similar to that obtained in sulfur doped amorphous carbon. The peak origin and the peculiar ZFC>FC case are qualitatively explained.

Surface morphology and structure of Ge layer on Si(111) after solid phase epitaxy

NASA Astrophysics Data System (ADS)

Yoshida, Ryoma; Tosaka, Aki; Shigeta, Yukichi

2018-05-01

The surface morphology change of a Ge layer on a Si(111) surface formed by solid phase epitaxy has been investigated with a scanning tunneling microscope (STM). The Ge film was deposited at room temperature and annealed at 400 °C or 600 °C. The STM images of the sample surface after annealing at 400 °C show a flat wetting layer (WL) with small three-dimensional islands on the WL. After annealing at 600 °C, the STM images show a surface roughening with large islands. From the relation between the average height of the roughness and the deposited layer thickness, it is confirmed that the diffusion of Ge atoms becomes very active at 600 °C. The Si crystal at the interface is reconstructed and the intermixing occurs over 600 °C. However, the intermixing is fairly restricted in the solid phase epitaxy growth at 400 °C. The surface morphology changes with the crystallization at 400 °C are discussed by the shape of the islands formed on the WL surface. It is shown that the diffusion of the Ge atoms in the amorphous phase is active even at 400 °C.

Modelling Polymer Deformation and Welding Behaviour during 3D Printing

NASA Astrophysics Data System (ADS)

McIlroy, Claire; Olmsted, Peter

2016-11-01

3D printing has the potential to transform manufacturing processes, yet improving the strength of printed parts, to equal that of traditionally-manufactured parts, remains an underlying issue. The most common method, fused deposition modelling, involves melting a thermoplastic, followed by layer-by-layer extrusion of the material to fabricate a three-dimensional object. The key to the ensuring strength at the weld between these layers is successful inter-diffusion. However, as the printed layer cools towards the glass transition temperature, the time available for diffusion is limited. In addition, the extrusion process significantly deforms the polymer micro-structure prior to welding and consequently affects how the polymers "re-entangle" across the weld. We have developed a simple model of the non-isothermal printing process to explore the effects that typical printing conditions and amorphous polymer rheology have on the ultimate weld structure. In particular, we incorporate both the stretch and orientation of the polymer using the Rolie-Poly constitutive equation to examine how the melt flows through the nozzle and is deposited onto the build plate. We then address how this deformation relaxes and contributes to the thickness and structure of the weld. National Institute for Standards and Technology (NIST) and Georgetown University.

Improved Electrochemical Cycling Durability in a Nickel Oxide Double-Layered Film.

PubMed

Hou, Shuai; Zhang, Xiang; Tian, Yanlong; Zhao, Jiupeng; Geng, Hongbin; Qu, Huiying; Zhang, Hangchuan; Zhang, Kun; Wang, Binsheng; Gavrilyuk, Alexander; Li, Yao

2017-11-16

For the first time, a crystalline-amorphous double-layered NiO x film has been prepared by reactive radio frequency magnetron sputtering. This film has exhibited improved electrochemical cycling durability, whereas other electrochromic parameters have been maintained at the required level, namely, a short coloration/bleaching time (0.8 s/1.1 s) and an enhanced transmittance modulation range (62.2 %) at λ=550 nm. Additionally, the double-layered film has shown better reversibility than that of amorphous and crystalline single-layered films. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characteristics of organic soil in black spruce forests: Implications for the application of land surface and ecosystem models in cold regions

USGS Publications Warehouse

Yi, S.; Manies, K.; Harden, J.; McGuire, A.D.

2009-01-01

Soil organic layers (OL) play an important role in landatmosphere exchanges of water, energy and carbon in cold environments. The proper implementation of OL in land surface and ecosystem models is important for predicting dynamic responses to climate warming. Based on the analysis of OL samples of black spruce (Picea mariana), we recommend that implementation of OL for cold regions modeling: (1) use three general organic horizon types (live, fibrous, and amorphous) to represent vertical soil heterogeneity; (2) implement dynamics of OL over the course of disturbance, as there are significant differences of OL thickness between young and mature stands; and (3) use two broad drainage classes to characterize spatial heterogeneity, as there are significant differences in OL thickness between dry and wet sites. Implementation of these suggestions into models has the potential to substantially improve how OL dynamics influence variability in surface temperature and soil moisture in cold regions. Copyright 2009 by the American Geophys.ical Union.

Optimization of imprintable nanostructured a-Si solar cells: FDTD study.

PubMed

Fisker, Christian; Pedersen, Thomas Garm

2013-03-11

We present a finite-difference time-domain (FDTD) study of an amorphous silicon (a-Si) thin film solar cell, with nano scale patterns on the substrate surface. The patterns, based on the geometry of anisotropically etched silicon gratings, are optimized with respect to the period and anti-reflection (AR) coating thickness for maximal absorption in the range of the solar spectrum. The structure is shown to increase the cell efficiency by 10.2% compared to a similar flat solar cell with an optimized AR coating thickness. An increased back reflection can be obtained with a 50 nm zinc oxide layer on the back reflector, which gives an additional efficiency increase, leading to a total of 14.9%. In addition, the patterned cells are shown to be up to 3.8% more efficient than an optimized textured reference cell based on the Asahi U-type glass surface. The effects of variations of the optimized solar cell structure due to the manufacturing process are investigated, and shown to be negligible for variations below ±10%.

Influence of Deposition Pressure on the Properties of Round Pyramid Textured a-Si:H Solar Cells for Maglev.

PubMed

Lee, Jaehyeong; Choi, Wonseok; Lee, Kyuil; Lee, Daedong; Kang, Hyunil

2016-05-01

HIT (Heterojunction with Intrinsic Thin-layer) photovoltaic cells is one of the highest efficiencies in the commercial solar cells. The pyramid texturization for reducing surface reflectance of HIT solar cells silicon wafers is widely used. For the low leakage current and high shunt of solar cells, the intrinsic amorphous silicon (a-Si:H) on substrate must be uniformly thick of pyramid structure. However, it is difficult to control the thickness in the traditional pyramid texturing process. Thus, we textured the intrinsic a-Si:H thin films with the round pyramidal structure by using HNO3, HF, and CH3COOH solution. The characteristics of round pyramid a-Si:H solar cells deposited at pressure of 500, 1000, 1500, and 2000 mTorr by PECVD (Plasma Enhanced Chemical Vapor Deposition) was investigated. The lifetime, open circuit voltage, fill factor and efficiency of a-Si:H solar cells were investigated with respect to various deposition pressure.

The microstructural changes of Ge2Sb2Te5 thin film during crystallization process

NASA Astrophysics Data System (ADS)

Xu, Jingbo; Qi, Chao; Chen, Limin; Zheng, Long; Xie, Qiyun

2018-05-01

Phase change memory is known as the most promising candidate for the next generation nonvolatile memory technology. In this paper, the microstructural changes of Ge2Sb2Te5 film, which is the most common choice of phase change memory material, has been carefully studied by the combination of several characterization techniques. The combination of resistance measurements, X-ray diffraction, Raman spectroscopy and X-ray reflectivity allows us to simultaneously extract the characteristics of microstructural changes during crystallization process. The existence of surface/interface Ge2Sb2Te5 layer has been proposed here based on X-ray reflectivity measurements. Although the total film thickness decreases, as a result of the phase transition from amorphous to metastable crystalline cubic and then to the stable hexagonal phase, the surface/interface thickness increases after crystallization. Moreover, the increase of average grain size, density and surface roughness has been confirmed during thermal annealing process.

Modulation of the operational characteristics of amorphous In-Ga-Zn-O thin-film transistors by In2O3 nanoparticles

NASA Astrophysics Data System (ADS)

Lee, Min-Jung; Lee, Tae Il; Park, Jee Ho; Kim, Jung Han; Chae, Gee Sung; Jun, Myung Chul; Hwang, Yong Kee; Baik, Hong Koo; Lee, Woong; Myoung, Jae-Min

2012-05-01

The structure of thin-film transistors (TFTs) based on amorphous In-Ga-Zn-O (a-IGZO) was modified by spin coating a suspension of In2O3 nanoparticles on a SiO2/p++ Si layered wafer surface prior to the deposition of IGZO layer by room-temperature sputtering. The number of particles per unit area (surface density) of the In2O3 nanoparticles could be controlled by applying multiple spin coatings of the nanoparticle suspension. During the deposition of IGZO, the In2O3 nanoparticles initially located on the substrate surface migrated to the top of the IGZO layer indicating that they were not embedded within the IGZO layer, but they supplied In to the IGZO layer to increase the In concentration in the channel layer. As a result, the channel characteristics of the a-IGZO TFT were modulated so that the device showed an enhanced performance as compared with the reference device prepared without the nanoparticle treatment. Such an improved device performance is attributed to the nano-scale changes in the structure of (InO)n ordering assisted by increased In concentration in the amorphous channel layer.

Spatial atomic layer deposition of ZnO/TiO{sub 2} nanolaminates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Rong, E-mail: rongchen@mail.hust.edu.cn; Lin, Ji-Long; He, Wen-Jie

2016-09-15

Spatial atomic layer deposition (S-ALD) is a potential high-throughput manufacturing technique offering fast and large scale ultrathin films deposition. Here, an S-ALD system with modular injectors is introduced for fabricating binary oxides and their nanolaminates. By optimizing the deposition conditions, both ZnO and TiO{sub 2} films demonstrate linear growth and desired surface morphology. The as-deposited ZnO film has high carrier mobility, and the TiO{sub 2} film shows suitable optical transmittance and band gap. The ZnO/TiO{sub 2} nanolaminates are fabricated by alternating substrate movement between each S-ALD modular units of ZnO and TiO{sub 2}. The grazing incidence x-ray diffraction spectra ofmore » nanolaminates demonstrating the signature peaks are weaker for the same thickness nanolaminates with more bilayers, suggesting tuning nanolaminates from crystalline to amorphous. Optical transmittances of ZnO/TiO{sub 2} laminates are enhanced with the increase of the bilayers' number in the visible range. Refractive indices of nanolaminates increase with the thickness of each bilayer decreasing, which demonstrates the feasibility of obtaining desired refractive indices by controlling the bilayer number. The electronic properties, including mobility, carrier concentration, and conductivity, are also tunable with different bilayers.« less

Detection of cryogenic water ice contaminants and the IR AI&T environment

NASA Astrophysics Data System (ADS)

Lynch, David K.; Russell, Ray W.

2000-12-01

Several remote sensing/infrared space surveillance programs in the midst of assembly, integration and test have recently experienced delays when water vapor was deposited as ice on cold surfaces in a sensor under test or calibration. When these surfaces were at critical locations, the sensitivity or response of the sensor decreased significantly because the ice absorbed the incoming signal. The source of water vapor could be from a chamber leak or outgassing from the sensor system or the vacuum chamber itself. In order to quantify the effects of ice deposits on signals in various spectral bands, published optical constants for amorphous and crystalline water ice have been used to calculate the transmission of water ice films as a function of wavelength from 1 to 20 microns. The results are presented in two ways: spectra of the physical thickness of a layer of ice whose absorption optical depth is unity, and transmission spectra for several characteristic layer thicknesses. These tools can be used in estimating the amount of ice - and by inference water vapor - present in the system. Related calculations can also be used to assess the probability that a given hardware setup or resulting data set is showing signs of degradation of response due to ice absorption, and the implications for those trying to interpret the results.

Magnetic and exchange bias properties of YCo thin films and IrMn/YCo bilayers

NASA Astrophysics Data System (ADS)

Venkat Narayana, M.; Manivel Raja, M.; Jammalamadaka, S. Narayana

2018-02-01

We report on the structural and magnetic properties of YCo thin films and IrMn/YCo bilayers. X-ray diffraction infer that all the films are amorphous in nature. Magnetization versus magnetic field measurements reveal room temperature soft ferromagnetism in all the YCo films. Thin films which were grown at 100 W sputter power with growth rates of 0.677, 0.694 and 0.711 Å/sec show better morphology and composition than 50 W (0.333, 0.444 and 0.277 Å/sec) grown films. Perpendicular exchange bias in as deposited bilayers is evident for IrMn/YCo bilayers. Exchange bias (EB) decreases in case of in plane measurements and enhances for out of plane measurements after perpendicular field annealing. EB is more in case of out of plane direction due to large perpendicular anisotropy in comparison with in plane direction. Above the critical thickness, EB variation is explained on the basis of random field model in the Heisenberg regime, which has been proposed by Malozemoff. Indeed there exists an inverse relationship between EB and IrMn layer thickness. Evidenced vertical shift apart from the horizontal shift for magnetization loops is attributed to frozen magnetic moments in one of the layers at the interface. Present results would prove to be helpful in spintronic device applications.

Evolution of oxygenated cadmium sulfide (CdS:O) during high-temperature CdTe solar cell fabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meysing, Daniel M.; Reese, Matthew O.; Warren, Charles W.

Oxygenated cadmium sulfide (CdS:O) produced by reactive sputtering has emerged as a promising alternative to conventional CdS for use as the n-type window layer in CdTe solar cells. Here, complementary techniques are used to expose the window layer (CdS or CdS:O) in completed superstrate devices and combined with a suite of materials characterization to elucidate its evolution during high temperature device processing. During device fabrication amorphous CdS:O undergoes significant interdiffusion with CdTe and recrystallization, forming CdS1-yTey nanocrystals whose Te fraction approaches solubility limits. Significant oxygen remains after processing, concentrated in sulfate clusters dispersed among the CdS1-yTey alloy phase, accounting formore » ~30% of the post-processed window layer based on cross-sectional microscopy. Interdiffusion and recrystallization are observed in devices with un-oxygenated CdS, but to a much lesser extent. Etching experiments suggest that the CdS thickness is minimally changed during processing, but the CdS:O window layer is reduced from 100 nm to 60-80 nm, which is confirmed by microscopy. Alloying reduces the band gap of the CdS:O window layer to 2.15 eV, but reductions in thickness and areal density improve its transmission spectrum, which is well matched to device quantum efficiency. The changes to the window layer in the reactive environments of device fabrication are profoundly different than what occurs by thermal annealing in an inert environment, which produced films with a band gap of 2.4 eV for both CdS and CdS:O. These results illustrate for the first time the significant changes that occur to the window layer during processing that are critical to the performance of CdTe solar cells.« less

Intermixing and thermal oxidation of ZrO2 thin films grown on a-Si, SiN, and SiO2 by metallic and oxidic mode magnetron sputtering

NASA Astrophysics Data System (ADS)

Coloma Ribera, R.; van de Kruijs, R. W. E.; Sturm, J. M.; Yakshin, A. E.; Bijkerk, F.

2017-03-01

The initial growth of DC sputtered ZrO2 on top of a-Si, SiN, and SiO2 layers has been studied by in vacuo high-sensitivity low energy ion scattering for two gas deposition conditions with different oxygen contents (high-O and low-O conditions). This unique surface sensitive technique allowed the determination of surface composition and thicknesses required to close the ZrO2 layer on all three substrates for both conditions. The ZrO2 layer closes similarly on all substrates due to more favorable enthalpies of formation for ZrO2 and ZrSiO4, resulting in passivation of the Si from the substrate. However, this layer closes at about half of the thickness (˜1.7 nm) for low-O conditions due to less oxidative conditions and less energetic particles arriving at the sample, which leads to less intermixing via silicate formation. In contrast, for high-O conditions, there is more ZrSiO4 and/or SiOx formation, giving more intermixing (˜3.4 nm). In vacuo X-ray photoelectron spectroscopy (XPS) measurements revealed similar stoichiometric ZrO2 layers deposited by both conditions and a higher interaction of the ZrO2 layer with the underlying a-Si for high-O conditions. In addition, oxygen diffusion through low-O ZrO2 films on a-Si has been investigated by ex situ angular-resolved XPS of samples annealed in atmospheric oxygen. For temperatures below 400 °C, no additional oxidation of the underlying a-Si was observed. This, together with the amorphous nature and smoothness of these samples, makes ZrO2 a good candidate as an oxidation protective layer on top of a-Si.

Effect of starting point formation on the crystallization of amorphous silicon films by flash lamp annealing

NASA Astrophysics Data System (ADS)

Sato, Daiki; Ohdaira, Keisuke

2018-04-01

We succeed in the crystallization of hydrogenated amorphous silicon (a-Si:H) films by flash lamp annealing (FLA) at a low fluence by intentionally creating starting points for the trigger of explosive crystallization (EC). We confirm that a partly thick a-Si part can induce the crystallization of a-Si films. A periodic wavy structure is observed on the surface of polycrystalline silicon (poly-Si) on and near the thick parts, which is a clear indication of the emergence of EC. Creating partly thick a-Si parts can thus be effective for the control of the starting point of crystallization by FLA and can realize the crystallization of a-Si with high reproducibility. We also compare the effects of creating thick parts at the center and along the edge of the substrates, and a thick part along the edge of the substrates leads to the initiation of crystallization at a lower fluence.

Synthesis and characterization of bulk metallic glasses prepared by laser direct deposition

NASA Astrophysics Data System (ADS)

Ye, Xiaoyang

Fe-based and Zr-based metallic glasses have attracted extensive interest for structural applications due to their excellent glass forming ability, superior mechanical properties, unique thermal and corrosion properties. In this study, the feasibility of synthesizing metallic glasses with good ductility by laser direct deposition is explored. Both in-situ synthesis with elemental powder mixture and ex-situ synthesis with prealloyed powder are discussed. Microstructure and properties of laser direct deposited metallic glass composites are analyzed. Synthesis of Fe-Cr-Mo-W-Mn-C-Si-B metallic glass composite with a large fraction of amorphous phase was accomplished using laser direct deposition. X-ray diffraction (XRD) and transmission electron microscopy investigations revealed the existence of amorphous structure. Microstructure analyses by optical microscopy and scanning electron microscopy (SEM) indicated the periodically repeated microstructures of amorphous and crystalline phases. Partially crystallized structure brought by laser reheating and remelting during subsequent laser scans aggregated in the overlapping area between each scan. XRD analysis showed that the crystalline particle embedded in the amorphous matrix was Cr 1.07Fe18.93 phase. No significant microstructural differences were found from the first to the last layer. Microhardness of the amorphous phase (HV0.2 1591) showed a much higher value than that of the crystalline phase (HV0.2 947). Macrohardness of the top layer had a value close to the microhardness of the amorphous region. Wear resistance property of deposited layers showed a significant improvement with the increased fraction of amorphous phase. Zr65Al10Ni10Cu15 amorphous composites with a large fraction of amorphous phase were in-situ synthesized by laser direct deposition. X-ray diffraction confirmed the existence of both amorphous and crystalline phases. Laser parameters were optimized in order to increase the fraction of amorphous phase. The microstructure analysis by scanning electron microscopy revealed the deposited structure was composed of periodically repeated amorphous and crystalline phases. Overlapping regions with nanoparticles aggregated were crystallized by laser reheating and remelting processes during subsequent laser scans. Vickers microhardness of the amorphous region showed around 35% higher than that of crystalline region. Average hardness obtained by a Rockwell macrohardness tester was very close to the microhardness of the amorphous region. The compression test showed that the fracture strain of Zr65Al10Ni10Cu15 amorphous composites was enhanced from less than 2% to as high as 5.7%, compared with fully amorphous metallic glass. Differential scanning calorimetry test results further revealed the amorphous structure and glass transition temperature Tg was observed to be around 655K. In 3 mol/L NaCl solution, laser direct deposited amorphous composites exhibited distinctly improved corrosion resistance, compared with fully-crystallized samples.

Multimillion atom simulations of dynamics of oxidation of an aluminum nanoparticle and nanoindentation on ceramics.

PubMed

Vashishta, Priya; Kalia, Rajiv K; Nakano, Aiichiro

2006-03-02

We have developed a first-principles-based hierarchical simulation framework, which seamlessly integrates (1) a quantum mechanical description based on the density functional theory (DFT), (2) multilevel molecular dynamics (MD) simulations based on a reactive force field (ReaxFF) that describes chemical reactions and polarization, a nonreactive force field that employs dynamic atomic charges, and an effective force field (EFF), and (3) an atomistically informed continuum model to reach macroscopic length scales. For scalable hierarchical simulations, we have developed parallel linear-scaling algorithms for (1) DFT calculation based on a divide-and-conquer algorithm on adaptive multigrids, (2) chemically reactive MD based on a fast ReaxFF (F-ReaxFF) algorithm, and (3) EFF-MD based on a space-time multiresolution MD (MRMD) algorithm. On 1920 Intel Itanium2 processors, we have demonstrated 1.4 million atom (0.12 trillion grid points) DFT, 0.56 billion atom F-ReaxFF, and 18.9 billion atom MRMD calculations, with parallel efficiency as high as 0.953. Through the use of these algorithms, multimillion atom MD simulations have been performed to study the oxidation of an aluminum nanoparticle. Structural and dynamic correlations in the oxide region are calculated as well as the evolution of charges, surface oxide thickness, diffusivities of atoms, and local stresses. In the microcanonical ensemble, the oxidizing reaction becomes explosive in both molecular and atomic oxygen environments, due to the enormous energy release associated with Al-O bonding. In the canonical ensemble, an amorphous oxide layer of a thickness of approximately 40 angstroms is formed after 466 ps, in good agreement with experiments. Simulations have been performed to study nanoindentation on crystalline, amorphous, and nanocrystalline silicon nitride and silicon carbide. Simulation on nanocrystalline silicon carbide reveals unusual deformation mechanisms in brittle nanophase materials, due to coexistence of brittle grains and soft amorphous-like grain boundary phases. Simulations predict a crossover from intergranular continuous deformation to intragrain discrete deformation at a critical indentation depth.

Timescales and mechanisms of formation of amorphous silica coatings on fresh basalts at Kīlauea Volcano, Hawai'i

NASA Astrophysics Data System (ADS)

Chemtob, Steven M.; Rossman, George R.

2014-10-01

Young basalts from Kīlauea Volcano, Hawai'i, frequently feature opaque surface coatings, 1-80 μm thick, composed of amorphous silica and Fe-Ti oxides. These coatings are the product of interaction of the basaltic surface with volcanically-derived acidic fluids. Previous workers have identified these coatings in a variety of contexts on Hawai'i, but the timescales of coating development, coating growth rates, and factors controlling lateral coating heterogeneity were largely unconstrained. We sampled and analyzed young lava flows (of varying ages, from hours to ~ 40 years) along Kīlauea's southwest and east rift zones to characterize variation in silica coating properties across the landscape. Coating thickness varies as a function of flow age, flow surface type, and proximity to acid sources like local fissure vents and regional plumes emitted from Kīlauea Caldera and Pu'u Ō'ō. Silica coatings that form in immediate proximity to acid sources are more chemically pure than those forming in higher pH environments, which contain significant Al and Fe. Incipient siliceous alteration was observed on basalt surfaces as young as 8 days old, but periods of a year or more are required to develop contiguous coatings with obvious opaque coloration. Inferred coating growth rates vary with environmental conditions but were typically 1-5 μm/year. Coatings form preferentially on flow surfaces with glassy outer layers, such as spatter ramparts, volcanic bombs, and dense pahoehoe breakouts, due to glass strain weakening during cooling. Microtextural evidence suggests that the silica coatings form both by in situ dissolution-reprecipitation and by deposition of silica mobilized in solution. Thin films of water, acidified by contact with volcanic vapors, dissolved near-surface basalt, then precipitated amorphous silica in place, mobilizing more soluble cations. Additional silica was transported to and deposited on the surface by silica-bearing altering fluids derived from the basalt interior.

Layer-by-Layer Templated Assembly of Silica at the Nanoscale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hinestrosa, Juan Pablo; Sutton, Jonathan E.; Allison, David P.

2013-01-29

Bioinspired bottom-up assembly and layer-by-layer (LbL) construction of inorganic materials from lithographically defined organic templates enables the fabrication of nanostructured systems under mild temperature and pH conditions. Such processes open the door to low-impact manufacturing and facile recycling of hybrid materials for energy, biology, and information technologies. Here, templated LbL assembly of silica was achieved using a combination of electron beam lithography, chemical lift-off, and aqueous solution chemistry. Nanopatterns of lines, honeycomb-lattices, and dot arrays were defined in polymer resist using electron beam lithography. Following development, exposed areas of silicon were functionalized with a vapor deposited amine-silane monolayer. Silicic acidmore » solutions of varying pH and salt content were reacted with the patterned organic amine-functional templates. Vapor treatment and solution reaction could be repeated, allowing LbL deposition. Conditions for the silicic acid deposition had a strong effect on thickness of each layer, and the morphology of the amorphous silica formed. Defects in the arrays of silica nanostructures were minor and do not affect the overall organization of the layers. In conclusion, the bioinspired method described here facilitates the bottom-up assembly of inorganic nanostructures defined in three dimensions and provides a path, via LbL processing, for the construction of layered hybrid materials under mild conditions.« less

Numerical Optimization of a Bifacial Bi-Glass Thin-Film a-Si:H Solar Cell for Higher Conversion Efficiency

NASA Astrophysics Data System (ADS)

Berrian, Djaber; Fathi, Mohamed; Kechouane, Mohamed

2018-02-01

Bifacial solar cells that maximize the energy output per a square meter have become a new fashion in the field of photovoltaic cells. However, the application of thin-film material on bifacial solar cells, viz., thin-film amorphous hydrogenated silicon ( a- Si:H), is extremely rare. Therefore, this paper presents the optimization and influence of the band gap, thickness and doping on the performance of a glass/glass thin-film a- Si:H ( n- i- p) bifacial solar cell, using a computer-aided simulation tool, Automat for simulation of hetero-structures (AFORS-HET). It is worth mentioning that the thickness and the band gap of the i-layer are the key parameters in achieving higher efficiency and hence it has to be handled carefully during the fabrication process. Furthermore, an efficient thin-film a- Si:H bifacial solar cell requires thinner and heavily doped n and p emitter layers. On the other hand, the band gap of the p-layer showed a dramatic reduction of the efficiency at 2.3 eV. Moreover, a high bifaciality factor of more than 92% is attained, and top efficiency of 10.9% is revealed under p side illumination. These optimizations demonstrate significant enhancements of the recent experimental work on thin-film a- Si:H bifacial solar cells and would also be useful for future experimental investigations on an efficient a- Si:H thin-film bifacial solar cell.

Miscibility of amorphous ZrO2-Al2O3 binary alloy

NASA Astrophysics Data System (ADS)

Zhao, C.; Richard, O.; Bender, H.; Caymax, M.; De Gendt, S.; Heyns, M.; Young, E.; Roebben, G.; Van Der Biest, O.; Haukka, S.

2002-04-01

Miscibility is a key factor for maintaining the homogeneity of the amorphous structure in a ZrO2-Al2O3 binary alloy high-k dielectric layer. In the present work, a ZrO2/Al2O3 laminate thin layer has been prepared by atomic layer chemical vapor deposition on a Si (100) wafer. This layer, with artificially induced inhomogeneity (lamination), enables one to study the change in homogeneity of the amorphous phase in the ZrO2/Al2O3 system during annealing. High temperature grazing incidence x-ray diffraction (HT-XRD) was used to investigate the change in intensity of the constructive interference peak of the x-ray beams which are reflected from the interfaces of ZrO2/Al2O3 laminae. The HT-XRD spectra show that the intensity of the peak decreases with an increase in the anneal temperature, and at 800 °C, the peak disappears. The same samples were annealed by a rapid thermal process (RTP) at temperatures between 700 and 1000 °C for 60 s. Room temperature XRD of the RTP annealed samples shows a similar decrease in peak intensity. Transmission electronic microscope images confirm that the laminate structure is destroyed by RTP anneals and, just below the crystallization onset temperature, a homogeneous amorphous ZrAlxOy phase forms. The results demonstrate that the two artificially separated phases, ZrO2 and Al2O3 laminae, tend to mix into a homogeneous amorphous phase before crystallization. This observation indicates that the thermal stability of ZrO2-Al2O3 amorphous phase is suitable for high-k applications.

Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

DOEpatents

Findikoglu, Alp T [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM; Matias, Vladimir [Santa Fe, NM; Choi, Woong [Los Alamos, NM

2009-10-27

A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

Effective coating of titania nanoparticles with alumina via atomic layer deposition

NASA Astrophysics Data System (ADS)

Azizpour, H.; Talebi, M.; Tichelaar, F. D.; Sotudeh-Gharebagh, R.; Guo, J.; van Ommen, J. R.; Mostoufi, N.

2017-12-01

Alumina films were deposited on titania nanoparticles via atomic layer deposition (ALD) in a fluidized bed reactor at 180 °C and 1 bar. Online mass spectrometry was used for real time monitoring of effluent gases from the reactor during each reaction cycle in order to determine the optimal dosing time of precursors. Different oxygen sources were used to see which oxygen source, in combination with trimethyl aluminium (TMA), provides the highest alumina growth per cycle (GPC). Experiments were carried out in 4, 7 and 10 cycles using the optimal dosing time of precursors. Several characterization methods, such as high resolution transmission electron microscopy (HRTEM), Brunauer-Emmett-Teller (BET), energy dispersive X-ray spectroscopy (EDX), Fourier transform infrared (FTIR), X-ray diffraction (XRD) and instrumental neutron activation analysis (INAA), were conducted on the products. Formation of the alumina film was confirmed by EDX mapping and EDX line profiling, FTIR and TEM. When using either water or deuterium oxide as the oxygen source, the thickness of the alumina film was greater than that of ozone. The average GPC measured by TEM for the ALD of TMA with water, deuterium oxide and ozone was about 0.16 nm, 0.15 nm and 0.11 nm, respectively. The average GPC calculated using the mass fraction of aluminum from INAA was close to those measured from TEM images. Excess amounts of precursors lead to a higher average growth of alumina film per cycle due to insufficient purging time. XRD analysis demonstrated that amorphous alumina was coated on titania nanoparticles. This amorphous layer was easily distinguished from the crystalline core in the TEM images. Decrease in the photocatalytic activity of titania nanoparticles after alumina coating was confirmed by measuring degradation of Rhodamine B by ultraviolet irradiation.

Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

NASA Astrophysics Data System (ADS)

Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

2013-09-01

Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oosthoek, J. L. M.; Kooi, B. J., E-mail: B.J.Kooi@rug.nl; Voogt, F. C.

2015-02-14

Phase-change memory line cells, where the active material has a thickness of 15 nm, were prepared for transmission electron microscopy (TEM) observation such that they still could be switched and characterized electrically after the preparation. The result of these observations in comparison with detailed electrical characterization showed (i) normal behavior for relatively long amorphous marks, resulting in a hyperbolic dependence between SET resistance and SET current, indicating a switching mechanism based on initially long and thin nanoscale crystalline filaments which thicken gradually, and (ii) anomalous behavior, which holds for relatively short amorphous marks, where initially directly a massive crystalline filament ismore » formed that consumes most of the width of the amorphous mark only leaving minor residual amorphous regions at its edges. The present results demonstrate that even in (purposely) thick TEM samples, the TEM sample preparation hampers the probability to observe normal behavior and it can be debated whether it is possible to produce electrically switchable TEM specimen in which the memory cells behave the same as in their original bulk embedded state.« less

Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

NASA Astrophysics Data System (ADS)

Oosthoek, J. L. M.; Voogt, F. C.; Attenborough, K.; Verheijen, M. A.; Hurkx, G. A. M.; Gravesteijn, D. J.; Kooi, B. J.

2015-02-01

Phase-change memory line cells, where the active material has a thickness of 15 nm, were prepared for transmission electron microscopy (TEM) observation such that they still could be switched and characterized electrically after the preparation. The result of these observations in comparison with detailed electrical characterization showed (i) normal behavior for relatively long amorphous marks, resulting in a hyperbolic dependence between SET resistance and SET current, indicating a switching mechanism based on initially long and thin nanoscale crystalline filaments which thicken gradually, and (ii) anomalous behavior, which holds for relatively short amorphous marks, where initially directly a massive crystalline filament is formed that consumes most of the width of the amorphous mark only leaving minor residual amorphous regions at its edges. The present results demonstrate that even in (purposely) thick TEM samples, the TEM sample preparation hampers the probability to observe normal behavior and it can be debated whether it is possible to produce electrically switchable TEM specimen in which the memory cells behave the same as in their original bulk embedded state.

Tuning the Outward to Inward Swelling in Lithiated Silicon Nanotubes via Surface Oxide Coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jiangwei; Luo, Hao; Liu, Yang

2016-09-14

The electrochemically-induced mechanical degradation hinders the application of Si anodes in advanced lithium-ion batteries. Hollow structures and surface coatings have been often used to mitigate the degradation of Si-based anodes. However, the structural change and degradation mechanism during lithiation/delithiation of hollow Si structures with coatings remain unclear. Here, we combine in situ TEM experiment and chemomechanical modeling to study the electrochemically induced swelling of amorphous-Si (a-Si) nanotubes with different thicknesses of surface SiOx layers. Surprisingly, we find that no inward expansion occurs at the inner surface during lithiation of a-Si nanotubes with native oxides. In contrast, inward expansion can bemore » induced by increasing the thickness of SiOx on the outer surface. Moreover, both the sandwich lithiation mechanism and two-stage lithiation process in a-Si nanotubes remain unchanged with the increasing thickness of surface coatings. Our chemomechanical modeling reveals the mechanical confinement effects in lithiated a-Si nanotubes with and without SiOx coatings. This work not only provides insights into the degradation of nanotube anodes with surface coatings, but also sheds light onto the optimal design of hollow anodes for high-performance lithium-ion batteries.« less

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

NASA Astrophysics Data System (ADS)

Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe; Catalano, Massimo; Grazia Manera, Maria; Rella, Roberto; Taurino, Antonietta

2011-09-01

In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

Absorptivity of semiconductors used in the production of solar cell panels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Grushko, E. V.; Mikityuk, T. I.

The dependence of the absorptivity of semiconductors on the thickness of the absorbing layer is studied for crystalline silicon (c-Si), amorphous silicon (a-Si), cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS), and copper gallium diselenide (CuGaSe{sub 2}, CGS). The calculations are performed with consideration for the spectral distribution of AM1.5 standard solar radiation and the absorption coefficients of the materials. It is shown that, in the region of wavelengths {lambda} = {lambda}{sub g} = hc/E{sub g}, almost total absorption of the photons in AM1.5 solar radiation is attained in c-Si at the thickness d = 7-8 mm, in a-Simore » at d = 30-60 {mu}m, in CdTe at d = 20-30 {mu}m, and in CIS and CGS at d = 3-4 {mu}m. The results differ from previously reported data for these materials (especially for c-Si). In previous publications, the thickness needed for the semiconductor to absorb solar radiation completely was identified with the effective light penetration depth at a certain wavelength in the region of fundamental absorption for the semiconductor.« less

Direct observation of bi-alkali antimonide photocathodes growth via in operando x-ray diffraction studies

DOE PAGES

Ruiz-Osés, M.; Schubert, S.; Attenkofer, K.; ...

2014-12-01

Alkali antimonides have a long history as visible-light-sensitive photocathodes. This study focuses on the process of fabrication of the bi-alkali photocathodes, K 2CsSb. In-situ synchrotron x-ray diffraction and photoresponse measurements were used to monitor phase evolution during sequential photocathode growth mode on Si(100) substrates. The amorphous-to-crystalline transition for the initial antimony layer was observed at a film thickness of 40 Å . The antimony crystalline structure dissolved upon potassium deposition, eventually recrystallizing upon further deposition into K-Sb crystalline modifications. This transition, as well as the conversion of potassium antimonide to K 2CsSb upon cesium deposition, is correlated with changes inmore » the quantum efficiency.« less

Capping of rare earth silicide nanowires on Si(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Appelfeller, Stephan; Franz, Martin; Kubicki, Milan

The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along (111) lattice planes. This behavior is related to strain duemore » to the lattice mismatch between the Si overlayer and the nanowires.« less

Jet Fuel Thermal Stability Investigations using Ellipsometry

NASA Technical Reports Server (NTRS)

Nash, Leigh; Klettlinger, Jennifer; Vasu, Subith

2017-01-01

Ellipsometry is an optical technique used to measure the thickness of thin films. This technique was used to measure the thickness of deposits created by heated jet fuel, specifically Sasol IPK on stainless steel tubes. A new amorphous model was used to iteratively determine the film thickness. This method was found to be repeatable, and the thickness of deposit increased with increasing temperature and increasing concentration of naphthalene.

Final Report For The Erosion And Corrosion Analysis Of Waste Transfer Primary Pipeline Sections From 241-SY Tank Farm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Page, J. S.; Wyrwas, R. B.; Cooke, G. A.

Three sections of primary transfer pipeline removed from the 241-SY Tank Farm in Hanford's 200 West area, labeled as SN-285, SN-286, and SN-278, were analyzed for the presence and amount of corrosion and erosion on the inside surface of the transfer pipe. All three sections of pipe, ranging in length between 6 and 8 in., were received at the 222-S Laboratory still in the pipe-in-pipe assembly. The annular spaces were filled with urethane foam injected into the pipes for as low as reasonably achievable (ALARA) purposes. The 3-in. primary transfer pipes were first separated from the outer encasement, 6-in. pipes.more » The pipes were cut into small sections, or coupons, based upon the results of a non-destructive pipe wall thickness measurement which used an ultrasonic transducer. Following removal of the foam, the coupons were subjected to a series of analytical methods utilizing both optical microscopy and scanning electron microscopy to obtain erosion and corrosion information. The ultrasonic transducer analysis of the SN-285 primary pipe did not show any thinned locations in the pipe wall which were outside the expected range for the 3-in. schedule 40 pipe of 216 mils. A coupon was cut from the thinnest area on the pipe, and analysis of the inside surface, which was in contact with the tank waste, revealed a continuous layer of corrosion ~ 100 11m (4 mils) thick under a semi-continuous layer of tank waste residue ~ 20 11m (1 mil) thick. This residue layer was composed of an amorphous phase rich in chromium, magnesium, calcium, and chlorine. Small pits were detected throughout the inside pipe surface with depths up to ~ 50 11m (2 mils). Similarly, the SN-286 primary pipe did not show, by the ultrasonic transducer measurements, any thinned locations in the pipe wall which were outside the expected range for this pipe. Analysis of the coupon cut from the pipe section showed the presence of a tank waste layer containing sodium aluminate and phases rich in iron, calcium, and chromium. This layer was removed by a cleaning process that left a pipe surface continuous in iron oxide/hydroxide (corrosion) with pockets of aluminum oxide, possibly gibbsite. The corrosion layer was ~ 50 11m (2 mil) thick over non-continuous pits less than ~ 50 11m deep (2 mils). Small particles of aluminum oxide were also detected under the corrosion layer. The ultrasonic transducer analysis of SN-278, like the previous primary pipes, did not reveal any noticeable thinning of the pipe wall. Analysis of the coupon cut from the pipe showed that the inside surface had a layer of tank waste residue that was partially detached from the pipe wall. This layer was easily scraped from the surface and was composed of two separate layers. The underlying layer was ~ 350 11m (14 mils) thick and composed of a cementation of small aluminum oxide (probably gibbsite) particles. A thinner layer on top of the aluminum oxide layer was rich in carbon and chlorine. Scattered pitting was observed on the inside pipe surface with one pit as deep as 200 11m (8 mils).« less

Film growth arising from the deposition of Au onto an i-Al Pd Mn quasicrystal: a medium energy ion scattering study

NASA Astrophysics Data System (ADS)

Noakes, T. C. Q.; Bailey, P.; Draxler, M.; McConville, C. F.; Ross, A. R.; Lograsso, T. A.; Leung, L.; Smerdon, J. A.; McGrath, R.

2006-06-01

The room temperature deposition of 7 ML of Au onto the fivefold symmetric surface of icosahedral Al-Pd-Mn leads to the formation of a several monolayers thick Au-Al alloy film. An AlAu film with 1:1 stoichiometry is formed, which shows no evidence of ordered structure, being either amorphous or polycrystalline. Annealing to 325 °C causes more Al to diffuse into the film, producing Al2Au but still with no indication of structure. Experiments using 0.5 ML of pre-deposited In demonstrated a surfactant effect as the In 'floated' on the surface during growth and produced a reduction in film roughness. However, contrary to previous findings the film was still either amorphous or polycrystalline, with no evidence of quasi-crystalline or aperiodic structure. Experiments were also conducted using smaller doses of Au to look for the formation of an epitaxial layer and, if formed, determine the registry with the substrate. However, no change in the Pd blocking curves for the surface could be seen, suggesting that the Au does not adsorb in well defined sites. This result is not surprising when considering that even for these low doses Al is drawn into the film, changing the composition and probably the structure of the topmost layers of the substrate, so that the potential adsorption sites on the clean surface may no longer exist.

Progress with polycrystalline silicon thin-film solar cells on glass at UNSW

NASA Astrophysics Data System (ADS)

Aberle, Armin G.

2006-01-01

Polycrystalline Si (pc-Si) thin-film solar cells on glass have long been considered a very promising approach for lowering the cost of photovoltaic (PV) solar electricity. In recent years there have been dramatic advances with this PV technology, and the first commercial modules (CSG Solar) are expected to hit the marketplace in 2006. The CSG modules are based on solid-phase crystallisation of plasma-enhanced chemical vapor deposition (PECVD) -deposited amorphous Si. Independent research in the author's group at the University of New South Wales (UNSW) during recent years has led to the development of three alternative pc-Si thin-film solar cells on glass—EVA, ALICIA and ALICE. Cell thickness is generally about 2 μm. The first two cells are made by vacuum evaporation, whereas ALICE cells can be made by either vacuum evaporation or PECVD. Evaporation has the advantage of being a fast and inexpensive Si deposition method. A crucial component of ALICIA and ALICE cells is a seed layer made on glass by metal-induced crystallisation of amorphous silicon (a-Si). The absorber layer of these cells is made by either ion-assisted Si epitaxy (ALICIA) or solid-phase epitaxy of a-Si (ALICE). This paper reports on the status of these three new thin-film PV technologies. All three solar cells seem to be capable of voltages of over 500 mV and, owing to their potentially inexpensive and scalable fabrication process, have significant industrial appeal.

Beneficial effects of water in the colloidal synthesis of InP/ZnS core-shell quantum dots for optoelectronic applications.

PubMed

Ramasamy, Parthiban; Kim, Bumjin; Lee, Min-Sang; Lee, Jong-Soo

2016-10-21

We demonstrate that the presence of a small amount of water as an impurity during the hot-injection synthesis can significantly decrease the emission lines full width at half-maximum (FWHM) and improve the quantum yield (QY) of InP/ZnS quantum dots (QDs). By utilizing the water present in the indium precursor and solvent, we obtained InP/ZnS QDs emitting around 530 nm with a FWHM as narrow as 46 nm and a QY up to 45%. Without water, the synthesized QDs have emission around 625 nm with a FWHM of 66 nm and a QY of about 33%. Absorption spectra, XRD and XPS analyses revealed that when water is present, an amorphous phosphate layer is formed over the InP QDs and inhibits the QD growth. This amorphous layer favors the formation of a very thick ZnS shell by decreasing the lattice mismatch between the InP core and the ZnS shell. We further show the possibility to tune the emission wavelengths of InP/ZnS QDs by simply adjusting the amount of water present in the system while keeping all the other reaction parameters (i.e., precursor concentration, reaction temperature and time) constant. As an example of their application in light-emitting diodes (LEDs), the green and red InP/ZnS QDs are combined with a blue LED chip to produce white light.

Structure and transport in organic semiconductor thin films

NASA Astrophysics Data System (ADS)

Vos, Sandra Elizabeth Fritz

Organic Semiconductors represent an exciting area of research due to their potential application in cheap and flexible electronics. In spite of the abundant interest in organic electronics the electronic transport mechanism remains poorly understood. Understanding the connection between molecular structure, crystal packing, intermolecular interactions and electronic delocalization is an important aspect of improving the transport properties of organics in thin film transistors (TFTs). In an organic thin film transistor, charge carrier transport is believed to occur within the first few monolayers of the organic material adjacent to the dielectric. It is therefore critical to understand the initial stages of film growth and molecular structure in these first few layers and relate this structure to electronic transport properties. The structure of organic films at the interface with an amorphous silicon dioxide ( a-SiO2) dielectric and how structure relates to transport in a TFT is the focus of this thesis. Pentacene films on a-SiO2 were extensively characterized with specular and in-plane X-ray diffraction, and CuKalpha1, and synchrotron radiation. The first layer of pentacene molecules adjacent to the a-SiO2 crystallized in a rectangular unit cell with the long axis of the molecules perpendicular to the substrate surface. Subsequent layers of pentacene crystallized in a slightly oblique in-plane unit cell that evolved as thickness was increased. The rectangular monolayer phase of pentacene did not persist when subsequent layers were deposited. Specular diffraction with Synchrotron radiation of a 160 A pentacene film (˜ 10 layers) revealed growth initiation of a bulk-like phase and persistence of the thin-film phase. Pentacene molecules were more tilted in the bulk-like phase and the in-plane unit cell was slightly more oblique. Pentacene grains began to grow randomly oriented with respect to the substrate surface (out-of-plane) in films near 650 A in thickness. The single crystal bulk phase of pentacene was observed from specular diffraction (CuKalpha1) of a 2.5 mum film. These results suggest that the thickness of pentacene films on a-SiO2 is an important aspect in the comparison of crystal structure and electronic transport.

Gelatin Nano-coating for Inhibiting Surface Crystallization of Amorphous Drugs.

PubMed

Teerakapibal, Rattavut; Gui, Yue; Yu, Lian

2018-01-05

Inhibit the fast surface crystallization of amorphous drugs with gelatin nano-coatings. The free surface of amorphous films of indomethacin or nifedipine was coated by a gelatin solution (type A or B) and dried. The coating's effect on surface crystallization was evaluated. Coating thickness was estimated from mass change after coating. For indomethacin (weak acid, pK a  = 4.5), a gelatin coating of either type deposited at pH 5 and 10 inhibited its fast surface crystal growth. The coating thickness was 20 ± 10 nm. A gelatin coating deposited at pH 3, however, provided no protective effect. These results suggest that an effective gelatin coating does not require that the drug and the polymer have opposite charges. The ineffective pH 3 coating might reflect the poor wetting of indomethacin's neutral, hydrophobic surface by the coating solution. For nifedipine (weak base, pK a  = 2.6), a gelatin coating of either type deposited at pH 5 inhibited its fast surface crystal growth. Gelatin nano-coatings can be conveniently applied to amorphous drugs from solution to inhibit fast surface crystallization. Unlike strong polyelectrolyte coatings, a protective gelatin coating does not require strict pairing of opposite charges. This could make gelatin coating a versatile, pharmaceutically acceptable coating for stabilizing amorphous drugs.

Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

PubMed

Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

2008-11-01

Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

Improved conversion efficiency of amorphous Si solar cells using a mesoporous ZnO pattern

PubMed Central

2014-01-01

To provide a front transparent electrode for use in highly efficient hydrogenated amorphous silicon (a-Si:H) thin-film solar cells, porous flat layer and micro-patterns of zinc oxide (ZnO) nanoparticle (NP) layers were prepared through ultraviolet nanoimprint lithography (UV-NIL) and deposited on Al-doped ZnO (AZO) layers. Through this, it was found that a porous micro-pattern of ZnO NPs dispersed in resin can optimize the light-trapping pattern, with the efficiency of solar cells based on patterned or flat mesoporous ZnO layers increased by 27% and 12%, respectively. PMID:25276101

230% room-temperature magnetoresistance in CoFeB /MgO/CoFeB magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Djayaprawira, David D.; Tsunekawa, Koji; Nagai, Motonobu; Maehara, Hiroki; Yamagata, Shinji; Watanabe, Naoki; Yuasa, Shinji; Suzuki, Yoshishige; Ando, Koji

2005-02-01

Magnetoresistance (MR) ratio up to 230% at room temperature (294% at 20 K) has been observed in spin-valve-type magnetic tunnel junctions (MTJs) using MgO tunnel barrier layer fabricated on thermally oxidized Si substrates. We found that such a high MR ratio can be obtained when the MgO barrier layer was sandwiched with amorphous CoFeB ferromagnetic electrodes. Microstructure analysis revealed that the MgO layer with (001) fiber texture was realized when the MgO layer was grown on amorphous CoFeB rather than on polycrystalline CoFe. Since there have been no theoretical studies on the MTJs with a crystalline tunnel barrier and amorphous electrodes, the detailed mechanism of the huge tunneling MR effect observed in this study is not clear at the present stage. Nevertheless, the present work is of paramount importance in realizing high-density magnetoresistive random access memory and read head for ultra high-density hard-disk drives into practical use.

Formation of ultrathin Ni germanides: solid-phase reaction, morphology and texture

NASA Astrophysics Data System (ADS)

van Stiphout, K.; Geenen, F. A.; De Schutter, B.; Santos, N. M.; Miranda, S. M. C.; Joly, V.; Detavernier, C.; Pereira, L. M. C.; Temst, K.; Vantomme, A.

2017-11-01

The solid-phase reaction of ultrathin (⩽10 nm) Ni films with different Ge substrates (single-crystalline (1 0 0), polycrystalline, and amorphous) was studied. As thickness goes down, thin film texture becomes a dominant factor in both the film’s phase formation and morphological evolution. As a consequence, certain metastable microstructures are epitaxially stabilized on crystalline substrates, such as the ɛ-Ni5Ge3 phase or a strained NiGe crystal structure on the single-crystalline substrates. Similarly, the destabilizing effect of axiotaxial texture on the film’s morphology becomes more pronounced as film thicknesses become smaller. These effects are contrasted by the evolution of germanide films on amorphous substrates, on which neither epitaxy nor axiotaxy can form, i.e. none of the (de)stabilizing effects of texture are observed. The crystallization of such amorphous substrates however, drives the film breakup.

All-gas-phase synthesis of UiO-66 through modulated atomic layer deposition

NASA Astrophysics Data System (ADS)

Lausund, Kristian Blindheim; Nilsen, Ola

2016-11-01

Thin films of stable metal-organic frameworks (MOFs) such as UiO-66 have enormous application potential, for instance in microelectronics. However, all-gas-phase deposition techniques are currently not available for such MOFs. We here report on thin-film deposition of the thermally and chemically stable UiO-66 in an all-gas-phase process by the aid of atomic layer deposition (ALD). Sequential reactions of ZrCl4 and 1,4-benzenedicarboxylic acid produce amorphous organic-inorganic hybrid films that are subsequently crystallized to the UiO-66 structure by treatment in acetic acid vapour. We also introduce a new approach to control the stoichiometry between metal clusters and organic linkers by modulation of the ALD growth with additional acetic acid pulses. An all-gas-phase synthesis technique for UiO-66 could enable implementations in microelectronics that are not compatible with solvothermal synthesis. Since this technique is ALD-based, it could also give enhanced thickness control and the possibility to coat irregular substrates with high aspect ratios.

Wide-spectral/dynamic-range skin-compatible phototransistors enabled by floated heterojunction structures with surface functionalized SWCNTs and amorphous oxide semiconductors.

PubMed

Hwang, Insik; Kim, Jaehyun; Lee, Minkyung; Lee, Min-Wook; Kim, Hee-Joong; Kwon, Hyuck-In; Hwang, Do Kyung; Kim, Myunggil; Yoon, Haeyoung; Kim, Yong-Hoon; Park, Sung Kyu

2017-11-09

Purified semiconducting single-walled carbon nanotubes (sc-SWCNTs) have been researched for optoelectronic applications due to their high absorption coefficient from the visible to even the near-infrared (NIR) region. Nevertheless, the insufficient electrical characteristics and incompatibility with conventional CMOS processing have limited their wide utilization in this emerging field. Here, we demonstrate highly detective and wide spectral/dynamic range phototransistors incorporating floated heterojunction active layers which are composed of low-temperature sol-gel processed n-type amorphous indium gallium zinc oxide (a-IGZO) stacked with a purified p-type sc-SWCNT layer. To achieve a high and broad spectral/dynamic range photo-response of the heterogeneous transistors, photochemically functionalized sc-SWCNT layers were carefully implemented onto the a-IGZO channel area with a floating p-n heterojunction active layer, resulting in the suppression of parasitic charge leakage and good bias driven opto-electrical properties. The highest photosensitivity (R) of 9.6 × 10 2 A W -1 and a photodetectivity (D*) of 4 × 10 14 Jones along with a dynamic range of 100-180 dB were achieved for our phototransistor in the spectral range of 400-780 nm including continuous and minimal frequency independent behaviors. More importantly, to demonstrate the diverse application of the ultra-flexible hybrid photosensor platform as skin compatible electronics, the sc-SWCNT/a-IGZO phototransistors were fabricated on an ultra-thin (∼1 μm) polyimide film along with a severe static and dynamic electro-mechanical test. The skin-like phototransistors showed excellent mechanical stability such as sustainable good electrical performance and high photosensitivity in a wide dynamic range without any visible cracks or damage and little noise interference after being rolled-up on the 150 μm-thick optical fiber as well as more than 1000 times cycling.

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

PubMed

Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

2016-12-01

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

Nanostructural evolution during emission of CsI-coated carbon fiber cathodes

NASA Astrophysics Data System (ADS)

Drummy, Lawrence F.; Apt, Scott; Shiffler, Don; Golby, Ken; LaCour, Matt; Maruyama, Benji; Vaia, Richard A.

2010-06-01

Carbon-based nanofiber and microfiber cathodes exhibit very low voltages for the onset of electron emission, and thus provide exciting opportunities for applications ranging from high power microwave sources to field emission displays. CsI coatings have been experimentally shown to lower the work function for emission from the fiber tips, although little is known about the microstructure of the fibers themselves in their as-received state, after coating with CsI, or after being subjected to high voltage cycling. Longitudinal cross sections of the original, unused CsI-coated fibers produced by focused ion beam lift-out revealed a nanostructured graphitic core surrounded by an amorphous carbon shell with submicron sized islands of crystalline CsI on the outer surface. Aberration-corrected high resolution electron microscopy (HREM) of the fiber core achieved 0.10 nm resolution, with the graphite (200) clearly visible in digital fast Fourier transformations of the 2-4 nm highly ordered graphitic domains. As the cathode fibers are cycled at high voltage, HREM demonstrates that the graphitic ordering of the core increases with the number of cycles, however the structure and thickness of the amorphous carbon layer remains unchanged. These results are consistent with micro-Raman measurements of the fiber disordered/graphitic (D/G) band ratios. After high voltage cycling, a uniform ˜100 nm film at the fiber tip was evident in both bright field transmission electron microscopy (TEM) and high angle annular dark field scanning TEM (STEM). Low-dose electron diffraction techniques confirmed the amorphous nature of this film, and STEM with elemental mapping via x-ray energy dispersive spectroscopy indicates this layer is composed of CsIO. The oxidative evolution of tip composition and morphology due to impurities in the chamber, along with increased graphitization of the fiber core, contributes to changes in emission behavior with cycling.

Periodic molybdenum disc array for light trapping in amorphous silicon layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jiwei; Deng, Changkai; Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China

2016-05-15

We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO{sub 2}. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under lightmore » illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scheuermann, J; Howansky, A; Goldan, A

Purpose: We present the first active matrix flat panel imager (AMFPI) capable of producing x-ray quantum noise limited images at low doses by overcoming the electronic noise through signal amplification by photoconductive avalanche gain (gav). The indirect detector fabricated uses an optical sensing layer of amorphous selenium (a-Se) known as High-Gain Avalanche Rushing Photoconductor (HARP). The detector design is called Scintillator HARP (SHARP)-AMFPI. This is the first image sensor to utilize solid-state HARP technology. Methods: The detector’s electronic readout is a 24 × 30 cm{sup 2} array of thin film transistors (TFT) with a pixel pitch of 85 µm. Themore » HARP structure consists of a 15 µm layer of a-Se isolated from the high voltage (HV) and signal electrode by a 2 µm thick hole blocking layer and electron blocking layer, respectively, to reduce dark current. A 150 µm thick structured CsI scintillator with reflective backing and a fiber optic faceplate (FOP) was coupled to the semi-transparent HV bias electrode of the HARP structure. Images were acquired using a 30 kVp Mo/Mo spectrum typically used in mammography. Results: Optical sensitivity measurements demonstrate that gav = 76 ± 5 can be achieved over the entire active area of the detector. At a constant dose to the detector of 6.67 µGy, image quality increases with gav until the effective electronic noise is negligible. Quantum noise limited images can be obtained with doses as low as 0.18 µGy. Conclusion: We demonstrate the feasibility of utilizing avalanche gain to overcome electronic noise. The indirect detector fabricated is the first solid-state imaging sensor to use HARP, and the largest active area HARP sensor to date. Our future work is to improve charge transport within the HARP structure and utilize a transparent HV electrode.« less

Characterization of Blistering and Delamination in Depleted Uranium Hohlraums

DOE Office of Scientific and Technical Information (OSTI.GOV)

Biobaum, K. J. M.

2013-03-01

Blistering and delamination are the primary failure mechanisms during the processing of depleted uranium (DU) hohlraums. These hohlraums consist of a sputter-deposited DU layer sandwiched between two sputter-deposited layers of gold; a final thick gold layer is electrodeposited on the exterior. The hohlraum is deposited on a copper-coated aluminum mandrel; the Al and Cu are removed with chemical etching after the gold and DU layers are deposited. After the mandrel is removed, blistering and delamination are observed on the interiors of some hohlraums, particularly at the radius region. It is hypothesized that blisters are caused by pinholes in the coppermore » and gold layers; etchant leaking through these holes reaches the DU layer and causes it to oxidize, resulting in a blister. Depending on the residual stress in the deposited layers, blistering can initiate larger-scale delamination at layer interfaces. Scanning electron microscopy indicates that inhomogeneities in the machined aluminum mandrel are replicated in the sputter-deposited copper layer. Furthermore, the Cu layer exhibits columnar growth with pinholes that likely allow etchant to come in contact with the gold layer. Any inhomogeneities or pinholes in this initial gold layer then become nucleation sites for blistering. Using a focused ion beam system to etch through the gold layer and extract a cross-sectional sample for transmission electron microscopy, amorphous, intermixed layers at the gold/DU interfaces are observed. Nanometer-sized bubbles in the sputtered and electrodeposited gold layers are also present. Characterization of the morphology and composition of the deposited layers is the first step in determining modifications to processing parameters, with the goal of attaining a significant improvement in hohlraum yield.« less

Sputtered pin amorphous silicon semi-conductor device and method therefor

DOEpatents

Moustakas, Theodore D.; Friedman, Robert A.

1983-11-22

A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

Two orders of magnitude enhancement in oxygen evolution reactivity on amorphous Ba0.5Sr0.5Co0.8Fe0.2O3−δ nanofilms with tunable oxidation state

PubMed Central

Chen, Gao; Zhou, Wei; Guan, Daqin; Sunarso, Jaka; Zhu, Yanping; Hu, Xuefeng; Zhang, Wei; Shao, Zongping

2017-01-01

Perovskite oxides exhibit potential for use as electrocatalysts in the oxygen evolution reaction (OER). However, their low specific surface area is the main obstacle to realizing a high mass-specific activity that is required to be competitive against the state-of-the-art precious metal–based catalysts. We report the enhanced performance of Ba0.5Sr0.5Co0.8Fe0.2O3−δ (BSCF) for the OER with intrinsic activity that is significantly higher than that of the benchmark IrO2, and this result was achieved via fabrication of an amorphous BSCF nanofilm on a surface-oxidized nickel substrate by magnetron sputtering. The surface nickel oxide layer of the Ni substrate and the thickness of the BSCF film were further used to tune the intrinsic OER activity and stability of the BSCF catalyst by optimizing the electronic configuration of the transition metal cations in BSCF via the interaction between the nanofilm and the surface nickel oxide, which enables up to 315-fold enhanced mass-specific activity compared to the crystalline BSCF bulk phase. Moreover, the amorphous BSCF–Ni foam anode coupled with the Pt–Ni foam cathode demonstrated an attractive small overpotential of 0.34 V at 10 mA cm−2 for water electrolysis, with a BSCF loading as low as 154.8 μg cm−2. PMID:28691090

High-performance SEGISFET pH Sensor using the structure of double-gate a-IGZO TFTs with engineered gate oxides

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2017-03-01

In this paper, we propose a high-performance separative extended gate ion-sensitive field-effect transistor (SEGISFET) that consists of a tin dioxide (SnO2) SEG sensing part and a double-gate structure amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with tantalum pentoxide/silicon dioxide (Ta2O5/SiO2)-engineered top-gate oxide. To increase sensitivity, we maximized the capacitive coupling ratio by applying high-k dielectric at the top-gate oxide layer. As an engineered top-gate oxide, a stack of 25 nm-thick Ta2O5 and 10 nm-thick SiO2 layers was found to simultaneously satisfy a small equivalent oxide thickness (˜17.14 nm), a low leakage current, and a stable interfacial property. The threshold-voltage instability, which is a fundamental issue in a-IGZO TFTs, was improved by low-temperature post-deposition annealing (˜87 °C) using microwave irradiation. The double-gate structure a-IGZO TFTs with engineered top-gate oxide exhibited high mobility, small subthreshold swing, high drive current, and larger on/off current ratio. The a-IGZO SEGISFETs with a dual-gate sensing mode showed a pH sensitivity of 649.04 mV pH-1, which is far beyond the Nernst limit. The non-ideal behavior of ISFETs, hysteresis, and drift effect also improved. These results show that the double-gate structure a-IGZO TFTs with engineered top-gate oxide can be a good candidate for cheap and disposable SEGISFET sensors.

Colored ultra-thin hybrid photovoltaics with high quantum efficiency for decorative PV applications (Presentation Recording)

NASA Astrophysics Data System (ADS)

Guo, L. Jay

2015-10-01

This talk will describe an approach to create architecturally compatible and decorative thin-film-based hybrid photovoltaics [1]. Most current solar panels are fabricated via complex processes using expensive semiconductor materials, and they are rigid and heavy with a dull, black appearance. As a result of their non-aesthetic appearance and weight, they are primarily installed on rooftops to minimize their negative impact on building appearance. Recently we introduced dual-function solar cells based on ultra-thin dopant-free amorphous silicon embedded in an optical cavity that not only efficiently extract the photogenerated carriers but also display distinctive colors with the desired angle-insensitive appearances [1,2]. The angle-insensitive behavior is the result of an interesting phase cancellation effect in the optical cavity with respect to angle of light propagation [3]. In order to produce the desired optical effect, the semiconductor layer should be ultra-thin and the traditional doped layers need to be eliminated. We adopted the approach of employing charge transport/blocking layers used in organic solar cells to meet this demand. We showed that the ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell can transmit desired wavelength of light and that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges. This is because the a-Si layer thickness is smaller than the charge diffusion length, therefore the electron-hole recombination is strongly suppressed in such ultra-thin layer. Reflective colored PVs can be made in a similar fashion. Light-energy-harvesting colored signage was demonstrated. Furthermore, a cascaded photovoltaics scheme based on tunable spectrum splitting can be employed to increase power efficiency by absorbing a broader band of light energy. Our work provides a guideline for optimizing a photoactive layer thickness in high efficiency hybrid PV design, which can be adopted by other material systems as well. Based on these understandings, we have also developed colored perovskite PV by integrating an optical cavity with the perovskite semiconductors [4]. The principle and experimental results will be presented. 1. J. Y. Lee, K. T. Lee, S.Y. Seo, L. J. Guo, "Decorative power generating panels creating angle insensitive transmissive colors," Sci. Rep. 4, 4192, 2014. 2. K. T. Lee, J.Y. Lee, S.-Y. Seo, and L. J. Guo, "Colored ultra-thin hybrid photovoltaics with high quantum efficiency," Light: Science and Applications, 3, e215, 2014. 3. K. T. Lee, S.-Y. Seo, J.Y. Lee, and L. J. Guo, "Ultrathin metal-semiconductor-metal resonator for angle invariant visible band transmission filters," Appl. Phys. Lett. 104, 231112, (2014); and "Strong resonance effect in a lossy medium-based optical cavity for angle robust spectrum filters," Adv. Mater, 26, 6324-6328, 2014. 4. K. T. Lee, M. Fukuda, L. J. Guo, "Colored, see-through perovskite solar cells employing an optical cavity," Submitted, 2015

Optical properties of amorphous SiO2-TiO2 multi-nanolayered coatings for 1064-nm mirror technology

NASA Astrophysics Data System (ADS)

Magnozzi, M.; Terreni, S.; Anghinolfi, L.; Uttiya, S.; Carnasciali, M. M.; Gemme, G.; Neri, M.; Principe, M.; Pinto, I.; Kuo, L.-C.; Chao, S.; Canepa, M.

2018-01-01

The use of amorphous, SiO2-TiO2 nanolayered coatings has been proposed recently for the mirrors of 3rd-generation interferometric detectors of gravitational waves, to be operated at low temperature. Coatings with a high number of low-high index sub-units pairs with nanoscale thickness were found to preserve the amorphous structure for high annealing temperatures, a key factor to improve the mechanical quality of the mirrors. The optimization of mirror designs based on such coatings requires a detailed knowledge of the optical properties of sub-units at the nm-thick scale. To this aim we have performed a Spectroscopic Ellipsometry (SE) study of amorphous SiO2-TiO2 nanolayered films deposited on Si wafers by Ion Beam Sputtering (IBS). We have analyzed films that are composed of 5 and 19 nanolayers (NL5 and NL19 samples) and have total optical thickness nominally equivalent to a quarter of wavelength at 1064 nm. A set of reference optical properties for the constituent materials was obtained by the analysis of thicker SiO2 and TiO2 homogeneous films (∼ 120 nm) deposited by the same IBS facility. By flanking SE with ancillary techniques, such as TEM and AFM, we built optical models that allowed us to retrieve the broad-band (250-1700 nm) optical properties of the nanolayers in the NL5 and NL19 composite films. In the models which provided the best agreement between simulation and data, the thickness of each sub-unit was fitted within rather narrow bounds determined by the analysis of TEM measurements on witness samples. Regarding the NL5 sample, with thickness of 19.9 nm and 27.1 nm for SiO2 and TiO2 sub-units, respectively, the optical properties presented limited variations with respect to the thin film counterparts. For the NL19 sample, which is composed of ultrathin sub-units (4.4 nm and 8.4 nm for SiO2 and TiO2, respectively) we observed a significant decrease of the IR refraction index for both types of sub-units; this points to a lesser mass density with respect to the thin film reference. The results are discussed in the light of the existing literature on nanofilms of amorphous oxides.

Development of amorphous SiC for MEMS-based microbridges

NASA Astrophysics Data System (ADS)

Summers, James B.; Scardelletti, Maximilian; Parro, Rocco; Zorman, Christian A.

2007-02-01

This paper reports our effort to develop amorphous hydrogenated silicon carbide (a-SiC:H) films specifically designed for MEMS-based microbridges using methane and silane as the precursor gases. In our work, the a-SiC:H films were deposited in a simple, commercial PECVD system at a fixed temperature of 300°C. Films with thicknesses from 100 nm to 1000 nm, a typical range for many MEMS applications, were deposited. Deposition parameters such as deposition pressure and methane-to-silane ratio were varied in order to obtain films with suitable residual stresses. Average residual stress in the as-deposited films selected for device fabrication was found by wafer curvature measurements to be -658 +/- 22 MPa, which could be converted to 177 +/- 40 MPa after thermal annealing at 450°C, making them suitable for micromachined bridges, membranes and other anchored structures. Bulk micromachined membranes were constructed to determine the Young's modulus of the annealed films, which was found to be 205 +/- 6 GPa. Chemical inertness was tested in aggressive solutions such as KOH and HF. Prototype microbridge actuators were fabricated using a simple surface micromachining process to assess the potential of the a-SiC:H films as structural layers for MEMS applications.

Glassy materials for lithium batteries: electrochemical properties and devices performances

NASA Astrophysics Data System (ADS)

Duclot, Michel; Souquet, Jean-Louis

Amorphous or glassy materials may be used as electrolyte or electrode materials for lithium primary or secondary batteries. A first generation proceeded from classical coin cells in which the organic electrolyte was replaced by a high lithium conductive glassy electrolyte. The solid components were assembled under isostatic pressure. The main advantages of such cells are a good storage stability and ability to operate until 200°C. Nevertheless, the high resistivity of the glassy electrolyte below room temperature and a limited depth for charge and discharge cycles makes these cells not competitive compared to conventional lithium-ion batteries. More promising, are the thin films solid state microbatteries realised by successive depositions of electrodes and electrolyte. The low resistance of the electrolyte amorphous layer allows cycling at temperatures as low as -10°C. The total thickness of thin film batteries, including packaging is less than 100 μm. A capacity of about 100 μAh cm -2 with over 10 4 charge-discharge cycles at 90% in depth of discharge is well suited for energy independent smart cards or intelligent labels, which represent for these devices a large and unrivalled market.

Stabilizing Nanocrystalline Oxide Nanofibers at Elevated Temperatures by Coating Nanoscale Surface Amorphous Films.

PubMed

Yao, Lei; Pan, Wei; Luo, Jian; Zhao, Xiaohui; Cheng, Jing; Nishijima, Hiroki

2018-01-10

Nanocrystalline materials often exhibit extraordinary mechanical and physical properties but their applications at elevated temperatures are impaired by the rapid grain growth. Moreover, the grain growth in nanocrystalline oxide nanofibers at high temperatures can occur at hundreds of degrees lower than that would occur in corresponding bulk nanocrystalline materials, which would eventually break the fibers. Herein, by characterizing a model system of scandia-stabilized zirconia using hot-stage in situ scanning transmission electron microscopy, we discover that the enhanced grain growth in nanofibers is initiated at the surface. Subsequently, we demonstrate that coating the fibers with nanometer-thick amorphous alumina layer can enhance their temperature stability by nearly 400 °C via suppressing the surface-initiated grain growth. Such a strategy can be effectively applied to other oxide nanofibers, such as samarium-doped ceria, yttrium-stabilized zirconia, and lanthanum molybdate. The nanocoatings also increase the flexibility of the oxide nanofibers and stabilize the high-temperature phases that have 10 times higher ionic conductivity. This study provides new insights into the surface-initiated grain growth in nanocrystalline oxide nanofibers and develops a facile yet innovative strategy to improve the high-temperature stability of nanofibers for a broad range of applications.

A Step toward High-Energy Silicon-Based Thin Film Lithium Ion Batteries.

PubMed

Reyes Jiménez, Antonia; Klöpsch, Richard; Wagner, Ralf; Rodehorst, Uta C; Kolek, Martin; Nölle, Roman; Winter, Martin; Placke, Tobias

2017-05-23

The next generation of lithium ion batteries (LIBs) with increased energy density for large-scale applications, such as electric mobility, and also for small electronic devices, such as microbatteries and on-chip batteries, requires advanced electrode active materials with enhanced specific and volumetric capacities. In this regard, silicon as anode material has attracted much attention due to its high specific capacity. However, the enormous volume changes during lithiation/delithiation are still a main obstacle avoiding the broad commercial use of Si-based electrodes. In this work, Si-based thin film electrodes, prepared by magnetron sputtering, are studied. Herein, we present a sophisticated surface design and electrode structure modification by amorphous carbon layers to increase the mechanical integrity and, thus, the electrochemical performance. Therefore, the influence of amorphous C thin film layers, either deposited on top (C/Si) or incorporated between the amorphous Si thin film layers (Si/C/Si), was characterized according to their physical and electrochemical properties. The thin film electrodes were thoroughly studied by means of electrochemical impedance spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. We can show that the silicon thin film electrodes with an amorphous C layer showed a remarkably improved electrochemical performance in terms of capacity retention and Coulombic efficiency. The C layer is able to mitigate the mechanical stress during lithiation of the Si thin film by buffering the volume changes and to reduce the loss of active lithium during solid electrolyte interphase formation and cycling.

Scanning electron microscopy of the surfaces of ion implanted SiC

NASA Astrophysics Data System (ADS)

Malherbe, Johan B.; van der Berg, N. G.; Kuhudzai, R. J.; Hlatshwayo, T. T.; Thabethe, T. T.; Odutemowo, O. S.; Theron, C. C.; Friedland, E.; Botha, A. J.; Wendler, E.

2015-07-01

This paper gives a brief review of radiation damage caused by particle (ions and neutrons) bombardment in SiC at different temperatures, and its annealing, with an expanded discussion on the effects occurring on the surface. The surface effects were observed using SEM (scanning electron microscopy) with an in-lens detector and EBSD (electron backscatter diffraction). Two substrates were used, viz. single crystalline 6H-SiC wafers and polycrystalline SiC, where the majority of the crystallites were 3C-SiC. The surface modification of the SiC samples by 360 keV ion bombardment was studied at temperatures below (i.e. room temperature), just at (i.e. 350 °C), or above (i.e. 600 °C) the critical temperature for amorphization of SiC. For bombardment at a temperature at about the critical temperature an extra step, viz. post-bombardment annealing, was needed to ascertain the microstructure of bombarded layer. Another aspect investigated was the effect of annealing of samples with an ion bombardment-induced amorphous layer on a 6H-SiC substrate. SEM could detect that this layer started to crystalize at 900 °C. The resulting topography exhibited a dependence on the ion species. EBSD showed that the crystallites forming in the amorphized layer were 3C-SiC and not 6H-SiC as the substrate. The investigations also pointed out the behaviour of the epitaxial regrowth of the amorphous layer from the 6H-SiC interface.

Amorphous vanadium oxide coating on graphene by atomic layer deposition for stable high energy lithium ion anodes.

PubMed

Sun, Xiang; Zhou, Changgong; Xie, Ming; Hu, Tao; Sun, Hongtao; Xin, Guoqing; Wang, Gongkai; George, Steven M; Lian, Jie

2014-09-21

Uniform amorphous vanadium oxide films were coated on graphene via atomic layer deposition and the nano-composite displays an exceptional capacity of ~900 mA h g(-1) at 200 mAg(-1) with an excellent capacity retention at 1 A g(-1) after 200 cycles. The capacity contribution (1161 mA h g(-1)) from vanadium oxide only almost reaches its theoretical value.

Amorphous Inorganic Electron-Selective Layers for Efficient Perovskite Solar Cells: Feasible Strategy Towards Room-Temperature Fabrication.

PubMed

Wang, Kai; Shi, Yantao; Li, Bo; Zhao, Liang; Wang, Wei; Wang, Xiangyuan; Bai, Xiaogong; Wang, Shufeng; Hao, Ce; Ma, Tingli

2016-03-02

Inorganic electron-selective layers (ESLs) are fabricated at extremely low temperatures of 70°C or even 25°C by a simple solution route. This is of great significance because the attained PCEs confirm the feasibility of room-temperature coating of inorganic amorphous ESLs through a solution method for the first time. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface nanoporosity has a greater influence on osteogenic and bacterial cell adhesion than crystallinity and wettability

NASA Astrophysics Data System (ADS)

Rodriguez-Contreras, Alejandra; Guadarrama Bello, Dainelys; Nanci, Antonio

2018-07-01

There has been much emphasis on the influence of crystallinity and wettability for modulating cell activity, particularly for bone biomaterials. In this context, we have generated titanium oxide layers with similar mesoporous topography and surface roughness but with amorphous or crystalline oxide layers and differential wettability. We then investigated their influence on the behavior of MC3T3 osteoblastic and bacterial cells. There was no difference in cell adhesion, spreading and growth on amorphous and crystalline surfaces. The number of focal adhesions was similar, however, cells on the amorphous surface exhibited a higher frequency of mature adhesions. The crystallinity of the surface layers also had no bearing on bacterial adhesion. While it cannot be excluded that surface crystallinity, roughness and wettability contribute to some degree to determining cell behavior, our data suggest that physical characteristics of surfaces represent the major determinant.

Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeh, T. C.; Zhu, Q.; Buchholz, D. B.

2015-03-01

The work functions of various amorphous and crystalline transparent conducting oxides (TCO5) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCO5, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanismsmore » associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.« less

Switching of the direction of reflectionless light propagation at exceptional points in non-PT-symmetric structures using phase-change materials.

PubMed

Huang, Yin; Shen, Yuecheng; Min, Changjun; Veronis, Georgios

2017-10-30

We introduce a non-parity-time-symmetric three-layer structure, consisting of a gain medium layer sandwiched between two phase-change medium layers for switching of the direction of reflectionless light propagation. We show that for this structure unidirectional reflectionlessness in the forward direction can be switched to unidirectional reflectionlessness in the backward direction at the optical communication wavelength by switching the phase-change material Ge 2 Sb 2 Te 5 (GST) from its amorphous to its crystalline phase. We also show that it is the existence of exceptional points for this structure with GST in both its amorphous and crystalline phases which leads to unidirectional reflectionless propagation in the forward direction for GST in its amorphous phase, and in the backward direction for GST in its crystalline phase. Our results could be potentially important for developing a new generation of compact active free-space optical devices.

Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

NASA Astrophysics Data System (ADS)

Yeh, T. C.; Zhu, Q.; Buchholz, D. B.; Martinson, A. B.; Chang, R. P. H.; Mason, T. O.

2015-03-01

The work functions of various amorphous and crystalline transparent conducting oxides (TCOs) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCOs, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanisms associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.

Amorphous silicon radiation detectors

DOEpatents

Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

1992-01-01

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Amorphous silicon radiation detectors

DOEpatents

Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

1992-11-17

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

Conformal coating of highly structured surfaces

DOEpatents

Ginley, David S.; Perkins, John; Berry, Joseph; Gennett, Thomas

2012-12-11

Method of applying a conformal coating to a highly structured substrate and devices made by the disclosed methods are disclosed. An example method includes the deposition of a substantially contiguous layer of a material upon a highly structured surface within a deposition process chamber. The highly structured surface may be associated with a substrate or another layer deposited on a substrate. The method includes depositing a material having an amorphous structure on the highly structured surface at a deposition pressure of equal to or less than about 3 mTorr. The method may also include removing a portion of the amorphous material deposited on selected surfaces and depositing additional amorphous material on the highly structured surface.

Solar cells with gallium phosphide/silicon heterojunction

NASA Astrophysics Data System (ADS)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

CO2-Assisted Conversion of Crystal Two-Dimensional Molybdenum Oxide to Amorphism with Plasmon Resonances.

PubMed

Liu, Wei; Xu, Qun

2018-04-20

Localized surface plasmon resonances (LSPRs) of ultra-thin two-dimensional (2D) nanomaterials opened a new regime in plasmonics in the last several years. 2D plasmonic materials are yet concentrated on the crystal structure, amorphous materials are hardly reported because of their limited preparation methods rather than undesired plasmonic properties. Taking molybdenum oxides as an example, herein, we elaborate the 2D amorphous plasmons prepared with the assistance of supercritical CO2. In brief, we examine the reported characteristic plasmonic properties of molybdenum oxides, and applications of supercritical CO2 in formations of 2D layer materials as well as introduced phase and disorder engineering based on our researchs. Furthermore, we propose our perspective on the development of 2D plasmons, especially for amorphous layer materials in the future. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Vertical resistivity in nanocrystalline ZnO and amorphous InGaZnO

NASA Astrophysics Data System (ADS)

McCandless, Jonathan P.; Leedy, Kevin D.; Schuette, Michael L.

2018-02-01

The goal is to gain additional insight into physical mechanisms and the role of microstructure on the formation of ohmic contacts and the reduction of contact resistance. We have measured a decreasing film resistivity in the vertical direction with increasing thickness of pulsed-laser deposited ZnO and IGZO. As the ZnO thickness increases from 122 nm to 441 nm, a reduction in resistivity from 3.29 Ω-cm to 0.364 Ω-cm occurred. The IGZO resistivity changes from 72.4 Ω-cm to 0.642 Ω-cm as the film is increased from 108nm to 219 nm. In the ZnO, the size of nanocolumnar grains increase with thickness resulting in fewer grain boundaries, and in the amorphous IGZO, the thicker region exhibits tunnel-like artifacts which may contribute to the reduced resistivity.

The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

NASA Astrophysics Data System (ADS)

Descoeudres, A.; Barraud, L.; Bartlome, R.; Choong, G.; De Wolf, Stefaan; Zicarelli, F.; Ballif, C.

2010-11-01

In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells, yielding aperture efficiencies up to 20.3% on 4 cm2 cells.

Ab Initio Study of Interfacial Structure Transformation of Amorphous Carbon Catalyzed by Ti, Cr, and W Transition Layers.

PubMed

Li, Xiaowei; Li, Lei; Zhang, Dong; Wang, Aiying

2017-11-29

Amorphous carbon (a-C) films composited with transition layers exhibit the desirable improvement of adhesion strength between films and substrate, but the further understanding on the interfacial structure transformation of a-C structure induced by transition layers is still lacked. In this paper, using ab initio calculations, we comparatively studied the interfacial structure between Ti, Cr, or W transition layers and a-C film from the atomic scale, and demonstrated that the addition of Ti, Cr, or W catalyzed the graphitic transformation of a-C structure at different levels, which provided the theoretical guidance for designing a multilayer nanocomposite film for renewed application.

Minor-Cu doped soft magnetic Fe-based FeCoBCSiCu amorphous alloys with high saturation magnetization

NASA Astrophysics Data System (ADS)

Li, Yanhui; Wang, Zhenmin; Zhang, Wei

2018-05-01

The effects of Cu alloying on the amorphous-forming ability (AFA) and magnetic properties of the P-free Fe81Co5B11C2Si1 amorphous alloy were investigated. Addition of ≤ 1.0 at.% Cu enhances the AFA of the base alloy without significant deterioration of the soft magnetic properties. The Fe80.5Co5B11C2Si1Cu0.5 alloy with the largest critical thickness for amorphous formation of ˜35 μm possesses a high saturation magnetization (Bs) of ˜1.78 T, low coercivity of ˜14.6 A/m, and good bending ductility upon annealing in a wide temperature range of 513-553 K with maintaining the amorphous state. The fabrication of the new high-Fe-content Fe-Co-B-C-Si-Cu amorphous alloys by minor doping of Cu gives a guideline to developing high Bs amorphous alloys with excellent AFA.