Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

PubMed

Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

2016-07-20

There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

Nanoscale insight into the p-n junction of alkali-incorporated Cu(In,Ga)Se 2 solar cells

DOE PAGES

Stokes, Adam; Al-Jassim, Mowafak; Norman, Andrew; ...

2017-04-05

The effects of alkali diffusion and post-deposition treatment in three-stage processed Cu(In,Ga)Se 2 solar cells are examined by using atom probe tomography and electrical property measurements. Cells, for which the substrate was treated at 650 °C to induce alkali diffusion from the substrate prior to absorber deposition, exhibited high open-circuit voltage (758 mV) and efficiency (18.2%) and also exhibited a 50 to 100-nm-thick ordered vacancy compound layer at the metallurgical junction. Surprisingly, these high-temperature samples exhibited higher concentrations of K at the junction (1.8 at.%) than post-deposition treatment samples (0.4 at.%). A model that uses Ga/(Ga + In) and Cu/(Gamore » + In) profiles to predict bandgaps (+/-17.9 meV) of 22 Cu(In,Ga)Se2 solar cells reported in literature was discussed and ultimately used to predict band properties at the nanoscale by using atom probe tomography data. The high-temperature samples exhibited a greater drop in the valence band maximum (200 meV) due to a lower Cu/(Ga + In) ratio than the post-deposition treatment samples. There was an anticorrelation of K concentrations and Cu/(Ga + In) ratios for all samples, regardless of processing conditions. In conclusion, changes in elemental profiles at the active junctions correlate well with the electrical behaviour of these devices.« less

Relative Roles of Gap Junction Channels and Cytoplasm in Cell-to-Cell Diffusion of Fluorescent Tracers

NASA Astrophysics Data System (ADS)

Safranyos, Richard G. A.; Caveney, Stanley; Miller, James G.; Petersen, Nils O.

1987-04-01

Intercellular (tissue) diffusion of molecules requires cytoplasmic diffusion and diffusion through gap junctional (or cell-to-cell) channels. The rates of tissue and cytoplasmic diffusion of fluorescent tracers, expressed as an effective diffusion coefficient, De, and a cytoplasmic diffusion coefficient, Dcyt, have been measured among the developing epidermal cells of a larval beetle, Tenebrio molitor L., to determine the contribution of the junctional channels to intercellular diffusion. Tracer diffusion was measured by injecting fluorescent tracers into cells and quantitating the rate of subsequent spread into adjacent cells. Cytoplasmic diffusion was determined by fluorescence photobleaching. These experiments show that gap junctional channels constitute approximately 70-80% of the total cell-to-cell resistance to the diffusion of organic tracers at high concentrations in this tissue. At low concentrations, however, the binding of tracer to cytoplasm slows down the cytoplasmic diffusion, which may limit intercellular diffusion.

Cubic zirconia as a species permeable coating for zinc diffusion in gallium arsenide

NASA Astrophysics Data System (ADS)

Bisberg, J. E.; Dabkowski, F. P.; Chin, A. K.

1988-10-01

Diffusion of zinc into GaAs through an yttria-stabilized cubic zirconia (YSZ) passivation layer has been demonstrated with an open-tube diffusion method. Pure zinc or GaAs/Zn2As3 sources produced high quality planar p-n junctions. The YSZ layer protects the GaAs surface from excessive loss of arsenic, yet is permeable to zinc, allowing its diffusion into the semiconductor. The YSZ films, deposited by electron beam evaporation, were typically 2000 Å thick. Zinc diffusion coefficients (DT) at 650 °C in the YSZ passivated GaAs ranged from 3.6×10-10 cm2/min for the GaAs/Zn2As3 source to 1.9×10-9 cm2/min for the pure zinc source. Doping concentrations for both YSZ passivated and uncapped samples were approximately 5×1019 cm-3.

Proximity-induced superconductivity in all-silicon superconductor /normal-metal junctions

NASA Astrophysics Data System (ADS)

Chiodi, F.; Duvauchelle, J.-E.; Marcenat, C.; Débarre, D.; Lefloch, F.

2017-07-01

We have realized laser-doped all-silicon superconducting (S)/normal metal (N) bilayers of tunable thickness and dopant concentration. We observed a strong reduction of the bilayers' critical temperature when increasing the normal metal thickness, a signature of the highly transparent S/N interface associated to the epitaxial sharp laser doping profile. We extracted the interface resistance by fitting with the linearized Usadel equations, demonstrating a reduction of 1 order of magnitude from previous superconductor/doped Si interfaces. In this well-controlled crystalline system we exploited the low-resistance S/N interfaces to elaborate all-silicon lateral SNS junctions with long-range proximity effect. Their dc transport properties, such as the critical and retrapping currents, could be well understood in the diffusive regime. Furthermore, this work led to the estimation of important parameters in ultradoped superconducting Si, such as the Fermi velocity, the coherence length, or the electron-phonon coupling constant, fundamental to conceive all-silicon superconducting electronics.

Soft Tissue Wounds and Principles of Healing

DTIC Science & Technology

2007-01-01

PAGE unclassified Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std Z39-18 source you read. This layer is avascular , and the classically...other materials across the dermal– epidermal junction. Because the epidermis is avascular , it depends upon diffusion from the capillary beds of the dermis...Full-thickness skin loss involving damage or necrosis of sub- cutaneous tissue that may extend down to but not through the under- lying fascia. STAGE 4

Cut-loading: a useful tool for examining the extent of gap junction tracer coupling between retinal neurons.

PubMed

Choi, Hee Joo; Ribelayga, Christophe P; Mangel, Stuart C

2012-01-12

In addition to chemical synaptic transmission, neurons that are connected by gap junctions can also communicate rapidly via electrical synaptic transmission. Increasing evidence indicates that gap junctions not only permit electrical current flow and synchronous activity between interconnected or coupled cells, but that the strength or effectiveness of electrical communication between coupled cells can be modulated to a great extent(1,2). In addition, the large internal diameter (~1.2 nm) of many gap junction channels permits not only electric current flow, but also the diffusion of intracellular signaling molecules and small metabolites between interconnected cells, so that gap junctions may also mediate metabolic and chemical communication. The strength of gap junctional communication between neurons and its modulation by neurotransmitters and other factors can be studied by simultaneously electrically recording from coupled cells and by determining the extent of diffusion of tracer molecules, which are gap junction permeable, but not membrane permeable, following iontophoretic injection into single cells. However, these procedures can be extremely difficult to perform on neurons with small somata in intact neural tissue. Numerous studies on electrical synapses and the modulation of electrical communication have been conducted in the vertebrate retina, since each of the five retinal neuron types is electrically connected by gap junctions(3,4). Increasing evidence has shown that the circadian (24-hour) clock in the retina and changes in light stimulation regulate gap junction coupling(3-8). For example, recent work has demonstrated that the retinal circadian clock decreases gap junction coupling between rod and cone photoreceptor cells during the day by increasing dopamine D2 receptor activation, and dramatically increases rod-cone coupling at night by reducing D2 receptor activation(7,8). However, not only are these studies extremely difficult to perform on neurons with small somata in intact neural retinal tissue, but it can be difficult to adequately control the illumination conditions during the electrophysiological study of single retinal neurons to avoid light-induced changes in gap junction conductance. Here, we present a straightforward method of determining the extent of gap junction tracer coupling between retinal neurons under different illumination conditions and at different times of the day and night. This cut-loading technique is a modification of scrape loading(9-12), which is based on dye loading and diffusion through open gap junction channels. Scrape loading works well in cultured cells, but not in thick slices such as intact retinas. The cut-loading technique has been used to study photoreceptor coupling in intact fish and mammalian retinas(7, 8,13), and can be used to study coupling between other retinal neurons, as described here.

Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

NASA Astrophysics Data System (ADS)

Shen, Haoting

The radial junction wire array structure was previously proposed as a solar cell geometry to separate the direction of carrier collection from the direction of light absorption, thereby circumventing the need to use high quality but expensive single crystal silicon (c-Si) material that has long minority carrier diffusion lengths. The Si radial junction structure can be realized by forming radial p-n junctions on Si pillar/wire arrays that have a diameter comparable to the minority carrier diffusion length. With proper design, the Si pillar arrays are also able to enhance light trapping and thereby increase the light absorption. However, the larger junction area and surface area on the pillar arrays compared to traditional planar junction Si solar cells makes it challenging to fabricate high performance devices due an in increase in surface defects. Therefore, effective surface passivation strategies are essential for radial junction devices. Hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) using a heterojunction with intrinsic thin layer (HIT) structure has previously been demonstrated as a very effective surface passivation layer for planar c-Si solar cells. It is therefore of interest to use a-Si:H in a HIT layer structure for radial p-n junction c-Si pillar array solar cells. This poses several challenges, however, including the need to fabricate ultra-thin a-Si:H layers conformally on high aspect ratio Si pillars, control the crystallinity at the a-Si:H/c-Si interface to yield a low interface state density and optimize the layer thicknesses, doping and contacts to yield high performance devices. This research in this thesis was aimed at developing the processing technology required to apply the HIT structure to radial junction Si pillar array solar cell devices and to evaluate the device characteristics. Initial studies focused on understanding the effects of process conditions on the growth rate and conformality of a-Si:H deposited by PECVD using SiH4 and H 2 on high aspect ratio trench structures. Experimentally, it was found that the a-Si:H growth rate increased with increasing SiH4 flow rate up to a point after which it saturated at a maximum growth rate. In addition, it was found that higher SiH4 flow rates resulted in improved thickness uniformity along the trenches. A model based on gas transport and surface reaction of SiH3 in trenches was developed and was used to explain the experimental results and predict conditions that would yield improved thickness uniformity. The knowledge gained in the PECVD deposition studies was then used to prepare HIT radial junction Si pillar array solar cell devices. Deep reactive ion etching (DRIE) was used to prepare Si pillar arrays on p-type (111) c-Si wafers. A process was developed to prepare n-type a-Si:H films from SiH 4 and H2, with PH3 as doping gas. Indium tin oxide (ITO) deposited by sputter deposition and Al-doped ZnO deposited by atomic layer deposition (ALD) were evaluated as transparent conductive top contacts to the n-type a-Si:H layer. By adjusting the SiH4/H2 gas flow ratio, intrinsic a-Si:H was grown on the c-Si surface without epitaxial micro-crystalline growth. Continuous and pulsed deposition modes were investigated for deposition of the intrinsic and n-type a-Si:H layers on the c-Si pillars. The measurements of device light performance shown that slightly lower short circuit current density (Jsc, 32 mA/cm2 to 35 mA/cm 2) but higher open circuit voltage (Voc, 0.56 V to .47 V) were obtained on the pulsed devices. As the result, higher efficiency (11.6%) was achieved on the pulsed devices (10.6% on the continuous device). The improved performance of the pulsed deposition devices was explained as arising from a higher SiH3 concentration in the initial plasma which lead to a more uniform layer thickness. Planar and radial junction Si wire array HIT solar cell devices were then fabricated and the device performance was compared. A series of p-type c-Si wafers with varying resistivity/doping density were used for this study in order to evaluate the effect of carrier diffusion length on device performance. The saturation current densities (J0) of the radial junction devices were consistently larger than that of the planar devices as a result of the larger junction area. Despite the increased leakage currents, the radial junction HIT cells exhibited similar Voc compared to the planar cells. In addition, at high doping densities (5˜1018 cm-3), the J sc (16.7mA/cm2) and collection efficiency (6.3%) of the radial junction devices was higher than that of comparable planar cells (J sc 12.7 mA/cm2 and efficiency 5.2%), demonstrating improved collection of photogenerated carriers in this geometry.

Molecular-Beam-Epitaxy Program

NASA Technical Reports Server (NTRS)

Sparks, Patricia D.

1988-01-01

Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

Consecutive assessment of FA and ADC values of normal lumbar nerve roots from the junction of the dura mater.

PubMed

Miyagi, Ryo; Sakai, Toshinori; Yamabe, Eiko; Yoshioka, Hiroshi

2015-06-27

Diffusion weighted imaging (DWI) and diffusion tensor imaging (DTI) are widely used in the evaluation of the central nervous system and recently have been reported as a potential tool for diagnosis of the peripheral nerve or the lumbar nerve entrapment. The purpose of this study was to evaluate consecutive changes in apparent diffusion coefficient (ADC) and fractional anisotropy (FA) values of normal lumbar nerve roots from the junction of the dura mater. The lumbar spinal nerves were examined in 6 male healthy volunteers (mean age, 35 years) with no experiences of sciatica, with a 3.0-T MR unit using a five-element phased-array surface coil. DTI was performed with the following imaging parameters: 11084.6/73.7 ms for TR/TE; b-value, 800 s/mm2; MPG, 33 directions; slice thickness, 1.5 mm; and total scan time, 7 min 35 s. ADC and FA values at all consecutive points along the L4, L5 and S1 nerves were quantified on every 1.5 mm slice from the junction of the dura mater using short fiber tracking. ADC values of all L4, 5, and S1 nerve roots decreased linearly up to 15 mm from the dura junction and was constant distally afterward. ADC values in the proximal portion demonstrated S1 > L5 > L4 (p < 0.05). On the other hand, FA values increased linearly up to 15 mm from the dura junction, and was constant distally afterward. FA values in the proximal portion showed L4 > L5 > S1 (p < 0.05). Our study demonstrated that ADC and FA values of each L4, 5, and S1 at the proximal portion from the junction of the dura matter changed linearly. It would be useful to know the normal profile of DTI values by location of each nerve root so that we can detect subtle abnormalities in each nerve root.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stokes, Adam; Al-Jassim, Mowafak; Norman, Andrew

The effects of alkali diffusion and post-deposition treatment in three-stage processed Cu(In,Ga)Se 2 solar cells are examined by using atom probe tomography and electrical property measurements. Cells, for which the substrate was treated at 650 °C to induce alkali diffusion from the substrate prior to absorber deposition, exhibited high open-circuit voltage (758 mV) and efficiency (18.2%) and also exhibited a 50 to 100-nm-thick ordered vacancy compound layer at the metallurgical junction. Surprisingly, these high-temperature samples exhibited higher concentrations of K at the junction (1.8 at.%) than post-deposition treatment samples (0.4 at.%). A model that uses Ga/(Ga + In) and Cu/(Gamore » + In) profiles to predict bandgaps (+/-17.9 meV) of 22 Cu(In,Ga)Se2 solar cells reported in literature was discussed and ultimately used to predict band properties at the nanoscale by using atom probe tomography data. The high-temperature samples exhibited a greater drop in the valence band maximum (200 meV) due to a lower Cu/(Ga + In) ratio than the post-deposition treatment samples. There was an anticorrelation of K concentrations and Cu/(Ga + In) ratios for all samples, regardless of processing conditions. In conclusion, changes in elemental profiles at the active junctions correlate well with the electrical behaviour of these devices.« less

Analysis of the attainable efficiency of a direct-bandgap betavoltaic element

NASA Astrophysics Data System (ADS)

Sachenko, A. V.; Shkrebtii, A. I.; Korkishko, R. M.; Kostylyov, V. P.; Kulish, M. R.; Sokolovskyi, I. O.; Evstigneev, M.

2015-11-01

Conversion of energy of beta-particles into electric energy in a p-n junction based on direct-bandgap semiconductors, such as GaAs, is analyzed considering realistic semiconductor system parameters. An expression for the collection coefficient, Q, of the electron-hole pairs generated by beta-electrons is derived taking into account the existence of the dead layer. We show that the collection coefficient of beta-electrons emitted by a 3H-source to a GaAs p-n junction is close to 1 in a broad range of electron lifetimes in the junction, ranging from 10-9to 10-7 s. For the combination 147Pm/GaAs, Q is relatively large (≥slant 0.4) only for quite long lifetimes (about 10-7 s) and large thicknesses (about 100 μm) of GaAs p-n junctions. For realistic lifetimes of minority carriers and their diffusion coefficients, the open-circuit voltage realized due to the irradiation of a GaAs p-n junction by beta-particles is obtained. The attainable beta-conversion efficiency η in the case of a 3H/GaAs combination is found to exceed that of the 147Pm/GaAs combination.

Simultaneous junction formation

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1984-01-01

High-risk, high-payoff improvements to a baseline process sequence of simultaneous junction formation of silicon solar cells are discussed. The feasibility of simultaneously forming front and back junctions of solar cells using liquid dopants on dendritic web silicon was studied. Simultaneous diffusion was compared to sequential diffusion. A belt furnace for the diffusion process was tested.

Surface photovoltage method extended to silicon solar cell junction

NASA Technical Reports Server (NTRS)

Wang, E. Y.; Baraona, C. R.; Brandhorst, H. W., Jr.

1974-01-01

The conventional surface photovoltage (SPV) method is extended to the measurement of the minority carrier diffusion length in diffused semiconductor junctions of the type used in a silicon solar cell. The minority carrier diffusion values obtained by the SPV method agree well with those obtained by the X-ray method. Agreement within experimental error is also obtained between the minority carrier diffusion lengths in solar cell diffusion junctions and in the same materials with n-regions removed by etching, when the SPV method was used in the measurements.

Semiconductor laser devices having lateral refractive index tailoring

DOEpatents

Ashby, Carol I. H.; Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1990-01-01

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Spin-valve Josephson junctions for cryogenic memory

NASA Astrophysics Data System (ADS)

Niedzielski, Bethany M.; Bertus, T. J.; Glick, Joseph A.; Loloee, R.; Pratt, W. P.; Birge, Norman O.

2018-01-01

Josephson junctions containing two ferromagnetic layers are being considered for use in cryogenic memory. Our group recently demonstrated that the ground-state phase difference across such a junction with carefully chosen layer thicknesses could be controllably toggled between zero and π by switching the relative magnetization directions of the two layers between the antiparallel and parallel configurations. However, several technological issues must be addressed before those junctions can be used in a large-scale memory. Many of these issues can be more easily studied in single junctions, rather than in the superconducting quantum interference device (SQUID) used for phase-sensitive measurements. In this work, we report a comprehensive study of spin-valve junctions containing a Ni layer with a fixed thickness of 2.0 nm and a NiFe layer of thickness varying between 1.1 and 1.8 nm in steps of 0.1 nm. We extract the field shift of the Fraunhofer patterns and the critical currents of the junctions in the parallel and antiparallel magnetic states, as well as the switching fields of both magnetic layers. We also report a partial study of similar junctions containing a slightly thinner Ni layer of 1.6 nm and the same range of NiFe thicknesses. These results represent the first step toward mapping out a "phase diagram" for phase-controllable spin-valve Josephson junctions as a function of the two magnetic layer thicknesses.

Method for forming p-n junctions and solar-cells by laser-beam processing

DOEpatents

Narayan, Jagdish; Young, Rosa T.

1979-01-01

This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.

Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based magnetic tunneling junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chae, Kyo-Suk; Samsung Electronics Co., Ltd., San #16 Banwol-dong, Hwasung-City, Gyeonggi-Do 445-701; Park, Jea-Gun, E-mail: parkjgL@hanyang.ac.kr

For Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd]{sub n}-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t{sub Fe}) between the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t{sub Fe} increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd]{sub n}-SyAF. However, it abruptly decreased by further increasing t{sub Fe} in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co{sub 2}Fe{sub 6}B{sub 2}more » pinned layer. Thus, the TMR ratio peaked at t{sub Fe} = 0.4 nm: i.e., 120% at 29 Ωμm{sup 2}.« less

Cyclic Stable-Unstable Slip Preserved along an Appalachian Fault

NASA Astrophysics Data System (ADS)

Wells, R. K.; Newman, J.; Holyoke, C. W., III; Wojtal, S. F.

2017-12-01

The inactive Copper Creek thrust, southern Appalachians, TN, preserves evidence suggesting cyclic aseismic and unstable slip. The Copper Creek thrust is a low-temperature (4-6 km burial depth) foreland thrust with an estimated net slip of 15-20 km. Immediately below the 2 cm thick calcite-shale fault zone, the footwall is composed of shale with cross-cutting calcite veins and is separated from the fault zone by a 300 µm thick layered calcite vein. Optical and electron microscopy indicates that this complex vein layer experienced grain size reduction by plasticity-induced fracturing followed by aseismic diffusion creep. The fault zone calcite exhibits interpenetrating grain boundaries and four-grain junctions suggesting diffusion creep, but also contains nanoscale grains (7 nm), vesicular calcite, and partially-coated clasts indicating unstable, possibly seismic, slip. Well-preserved clasts of deformed calcite vein layer material within the fault zone indicate repeated cycle(s) of aseismic diffusion creep. In addition, nanoscale calcite grains, 30 nm, with straight grain boundaries that form triple junctions, may represent earlier nanoscale grains formed during unstable slip that have experienced grain growth during periods of aseismic creep. Based on the spatial and temporal relations of these preserved microstructures, we propose a sequence of deformation processes consistent with cyclic episodes of unstable slip separated by intervals of aseismic creep. Formation of calcite-filled veins is followed by grain size reduction in vein calcite by plasticity-induced fracturing and aseismic grain-size sensitive diffusion creep deformation in fine-grained calcite. During aseismic creep, the combination of grain growth, resulting in fault strengthening, and an increase in pore fluid pressure, reducing the effective fault strength, leads to new fractures and/or an unstable slip event. During unstable slip, nanograins and vesicular calcite form as a result of thermal decomposition and coated clasts form as a result of fluidization of the fault zone, and are then incorporated within ductilely deforming calcite during a new interval of aseismic creep.

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C., Jr.; Chai, A.-T.

1981-01-01

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Diffusion length measurements in bulk and epitaxially grown 3-5 semiconductors using charge collection microscopy

NASA Technical Reports Server (NTRS)

Leon, R. P.

1987-01-01

Diffusion lengths and surface recombination velocities were measured in GaAs diodes and InP finished solar cells. The basic techniques used was charge collection microscopy also known as electron beam induced current (EBIC). The normalized currents and distances from the pn junction were read directly from the calibrated curves obtained while using the line scan mode in an SEM. These values were then equated to integral and infinite series expressions resulting from the solution of the diffusion equation with both extended generation and point generation functions. This expands previous work by examining both thin and thick samples. The surface recombination velocity was either treated as an unknown in a system of two equations, or measured directly using low e(-) beam accelerating voltages. These techniques give accurate results by accounting for the effects of surface recombination and the finite size of the generation volume.

Superconducting structure with layers of niobium nitride and aluminum nitride

DOEpatents

Murduck, James M.; Lepetre, Yves J.; Schuller, Ivan K.; Ketterson, John B.

1989-01-01

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

Thin silicon solar cell performance characteristics

NASA Technical Reports Server (NTRS)

Gay, C. F.

1978-01-01

Refined techniques for surface texturizing, back surface field and back surface reflector formation were evaluated for use with shallow junction, single-crystal silicon solar cells. Each process was characterized individually and collectively as a function of device thickness and bulk resistivity. Among the variables measured and reported are open circuit voltage, short circuit current and spectral response. Substantial improvements were obtained by the utilization of a low cost aluminum paste process to simultaneously remove the unwanted n(+) diffused region, form the back surface field and produce an ohmic contact metallization. The highly effective BSF which results from applying this process has allowed fabrication of cells 0.05 mm thick with initial outputs as high as 79.5 mW/4 sq cm (28 C, AM0) and superior electron radiation tolerance. Cells of 0.02 mm to 0.04 mm thickness have been fabricated with power to mass ratios well in excess of 2 watts per gram.

Superconducting structure with layers of niobium nitride and aluminum nitride

DOEpatents

Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

1989-07-04

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

Magnetic domain wall engineering in a nanoscale permalloy junction

NASA Astrophysics Data System (ADS)

Wang, Junlin; Zhang, Xichao; Lu, Xianyang; Zhang, Jason; Yan, Yu; Ling, Hua; Wu, Jing; Zhou, Yan; Xu, Yongbing

2017-08-01

Nanoscale magnetic junctions provide a useful approach to act as building blocks for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain structure and the magnetic switching in the Permalloy (Fe20Ni80) nanoscale magnetic junctions with different thicknesses by using micromagnetic simulations. It is found that both the 90-° and 45-° domain walls can be formed between the junctions and the wire arms depending on the thickness of the device. The magnetic switching fields show distinct thickness dependencies with a broad peak varying from 7 nm to 22 nm depending on the junction sizes, and the large magnetic switching fields favor the stability of the MRAM operation.

Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modelling

NASA Technical Reports Server (NTRS)

Keeney, R.; Sundaram, L. M. G.; Rode, H.; Bhat, I.; Ghandhi, S. K.; Borrego, J. M.

1984-01-01

The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.

Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

NASA Astrophysics Data System (ADS)

Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

2017-05-01

Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive electro-optic characterization of these components will be presented.

Grain boundary and triple junction diffusion in nanocrystalline copper

NASA Astrophysics Data System (ADS)

Wegner, M.; Leuthold, J.; Peterlechner, M.; Song, X.; Divinski, S. V.; Wilde, G.

2014-09-01

Grain boundary and triple junction diffusion in nanocrystalline Cu samples with grain sizes, , of ˜35 and ˜44 nm produced by spark plasma sintering were investigated by the radiotracer method using the 63Ni isotope. The measured diffusivities, Deff, are comparable with those determined previously for Ni grain boundary diffusion in well-annealed, high purity, coarse grained, polycrystalline copper, substantiating the absence of a grain size effect on the kinetic properties of grain boundaries in a nanocrystalline material at grain sizes d ≥ 35 nm. Simultaneously, the analysis predicts that if triple junction diffusion of Ni in Cu is enhanced with respect to the corresponding grain boundary diffusion rate, it is still less than 500ṡDgb within the temperature interval from 420 K to 470 K.

Phase Sensitive Measurements of Ferromagnetic Josephson Junctions for Cryogenic Memory Applications

NASA Astrophysics Data System (ADS)

Niedzielski, Bethany Maria

A Josephson junction is made up of two superconducting layers separated by a barrier. The original Josephson junctions, studied in the early 1960's, contained an insulating barrier. Soon thereafter, junctions with normal-metal barriers were also studied. Ferromagnetic materials were not even theoretically considered as a barrier layer until around 1980, due to the competing order between ferromagnetic and superconducting systems. However, many exciting physical phenomena arise in hybrid superconductor/ferromagnetic devices, including devices where the ground state phase difference between the two superconductors is shifted by pi. Since their experimental debut in 2001, so-called pi junctions have been demonstrated by many groups, including my own, in systems with a single ferromagnetic layer. In this type of system, the phase of the junction can be set to either 0 or pi depending on the thickness of the ferromagnetic layer. Of interest, however, is the ability to control the phase of a single junction between the 0 and pi states. This was theoretically shown to be possible in a system containing two ferromagnetic layers (spin-valve junctions). If the materials and their thicknesses are properly chosen to manipulate the electron pair correlation function, then the phase state of a spin-valve Josephson junction should be capable of switching between the 0 and ? phase states when the magnetization directions of the two ferromagnetic layers are oriented in the antiparallel and parallel configurations, respectively. Such a phase-controllable junction would have immediate applications in cryogenic memory, which is a necessary component to an ultra-low power superconducting computer. A fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. The goal of this work was to experimentally verify this prediction for a phase-controllable ferromagnetic Josephson junction. To address this complicated system, first, studies of junctions with only a single ferromagnetic junction were required to determine the 0-pi transition thickness of that material, the decay of the critical current through the junction with thickness, and the switching field of the material. The materials studied included NiFeMo, NiFe, Ni, and NiFeCo. Additionally, roughness studies of several different superconducting base electrodes and normal metal buffer and spacer layers were performed to determine the optimum junction layers. The ferromagnetic layers used were on the order of 1-2 nm thick, so a smooth growth template is imperative to maintain continuous films with in-plane magnetizations. Lastly, single junction spin-valve samples were studied. We are not equipped to measure the phase of a single junction, but series of samples where one ferromagnetic layer is systematically varied in thickness can inform the proper thicknesses needed for 0-pi switching based on relative critical current values between the parallel and antiparallel magnetic configurations. Utilizing this background information, two spin-valve samples were incorporated in a superconducting loop so that the relative phase of the two junctions could be investigated. Through this process, the first phase-controllable ferromagnetic Josephson junctions were experimentally demonstrated using phase-sensitive measurement techniques. This provided the proof of concept for the Josephson Magnetic Random Access Memory (JMRAM), a superconducting memory system in development at Northrop Grumman, with whom we collaborate on this work. Phase-controllable systems were successfully demonstrated using two different magnetic material stacks and verified with several analysis techniques.

Characterization of the insulator barrier and the superconducting transition temperature in GdBa{sub 2}Cu{sub 3}O{sub 7−δ}/BaTiO{sub 3} bilayers for application in tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Navarro, H., E-mail: henrynavarro@cab.cnea.gov.ar; Sirena, M.; Haberkorn, N.

2015-07-28

The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO{sub 3} tunnel barrier deposited on a 16 nm thick GdBa{sub 2}Cu{sub 3}O{sub 7−δ} thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO{sub 3} barrier thickness between 1.6 and 4 nm. The BaTiO{sub 3} layers present an energy barrier of ≈1.2 eV and an attenuation length of 0.35–0.5 nm (depending on the appliedmore » voltage). The GdBa{sub 2}Cu{sub 3}O{sub 7−δ} electrode is totally covered by a BaTiO{sub 3} thickness above 3 nm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4 nm thick BaTiO{sub 3} top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO{sub 3} thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa{sub 2}Cu{sub 3}O{sub 7−δ}. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO{sub 3} barrier)« less

Sputtered Metal Oxide Broken Gap Junctions for Tandem Solar Cells

NASA Astrophysics Data System (ADS)

Johnson, Forrest

Broken gap metal oxide junctions have been created for the first time by sputtering using ZnSnO3 for the n-type material and Cu 2O or CuAlO2 for the p-type material. Films were sputtered from either ceramic or metallic targets at room temperature from 10nm to 220nm thick. The band structure of the respective materials have theoretical work functions which line up with the band structure for tandem CIAGS/CIGS solar cell applications. Multiple characterization methods demonstrated consistent ohmic I-V profiles for devices on rough surfaces such as ITO/glass and a CIAGS cell. Devices with total junction specific contact resistance of under 0.001 Ohm-cm2 have been achieved with optical transmission close to 100% using 10nm films. Devices showed excellent stability up to 600°C anneals over 1hr using ZnSnO3 and CuAlO2. These films were also amorphous -a great diffusion barrier during top cell growth at high temperatures. Rapid Thermal Anneal (RTA) demonstrated the ability to shift the band structure of the whole device, allowing for tuning it to align with adjacent solar layers. These results remove a key barrier for mass production of multi-junction thin film solar cells.

Molecular dynamics simulation of self-diffusion processes in titanium in bulk material, on grain junctions and on surface.

PubMed

Sushko, Gennady B; Verkhovtsev, Alexey V; Yakubovich, Alexander V; Schramm, Stefan; Solov'yov, Andrey V

2014-08-21

The process of self-diffusion of titanium atoms in a bulk material, on grain junctions and on surface is explored numerically in a broad temperature range by means of classical molecular dynamics simulation. The analysis is carried out for a nanoscale cylindrical sample consisting of three adjacent sectors and various junctions between nanocrystals. The calculated diffusion coefficient varies by several orders of magnitude for different regions of the sample. The calculated values of the bulk diffusion coefficient correspond reasonably well to the experimental data obtained for solid and molten states of titanium. Investigation of diffusion in the nanocrystalline titanium is of a significant importance because of its numerous technological applications. This paper aims to reduce the lack of data on diffusion in titanium and describe the processes occurring in bulk, at different interfaces and on surface of the crystalline titanium.

Increase in the diffusion length of minority carriers in Al{sub x}Ga{sub 1–x}N alloys ({sub x} = 0–0.1) fabricated by ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malin, T. V., E-mail: mal-tv@mail.ru; Gilinsky, A. M.; Mansurov, V. G.

2015-10-15

The room-temperature diffusion length of minority carriers in n-Al{sub 0.1}Ga{sub 0.9}N layers grown by ammonia molecular beam epitaxy on sapphire (0001) substrates used in structures for ultraviolet photodetectors is studied. Measurements were performed using the spectral dependence of the photocurrent recorded in a built-in p–n junction for thin samples and using the induced electron-current procedure for films up to 2 µm thick. The results show that the hole diffusion length in n-AlGaN films is 120–150 nm, which is larger than in GaN films grown under similar growth conditions by a factor of 3–4. This result can be associated with themore » larger lateral sizes characteristic of hexagonal columns in AlGaN layers grown by molecular beam epitaxy. No increase in the hole diffusion length is observed for thicker films.« less

Research on gallium arsenide diffused junction solar cells

NASA Technical Reports Server (NTRS)

Borrego, J. M.; Ghandi, S. K.

1984-01-01

The feasibility of using bulk GaAs for the fabrication of diffused junction solar cells was determined. The effects of thermal processing of GaAs was studied, and the quality of starting bulk GaAs for this purpose was assessed. These cells are to be made by open tube diffusion techniques, and are to be tested for photovoltaic response under AMO conditions.

Fabrication of superconductor-ferromagnet-insulator-superconductor Josephson junctions with critical current uniformity applicable to integrated circuits

NASA Astrophysics Data System (ADS)

Ito, Hiroshi; Taniguchi, Soya; Ishikawa, Kouta; Akaike, Hiroyuki; Fujimaki, Akira

2017-03-01

Nb Josephson junctions (JJs) were fabricated with a Pd89Ni11 ferromagnetic interlayer and an AlO x tunnel barrier layer for use in large-scale superconducting integrated circuits. The junctions had a small critical current (I c) spread, where the standard deviation 1σ was less than 2% at 4.2 K for junctions with the same designed size. It was observed that the electrical behavior of the junctions could be controlled by manipulating the film thickness of the PdNi interlayer. The junctions behaved as a π-JJ for thicknesses of 9 and 11 nm, showing 1σ in the I c spread of 1.2% for 9 nm.

Status of Diffused Junction p(+)n InP Solar Cells for Space Applications

NASA Technical Reports Server (NTRS)

Faur, Mircea; Faur, Maria; Flood, D. J.; Brinker, D. J.; Goradia, C.; Fatemi, N. S.; Jenkins, P. P.; Wilt, D. M.; Bailey, S.

1994-01-01

Recently, we have succeeded in fabricating diffused junction p(+)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3%. The maximum AMO, 25 C efficiency recorded to date on bare cells is, however, only 13.2%. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(+)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: 1) the formation of thin p(+) InP:Cd emitter layers, 2) electroplated front contacts, 3) surface passivation and 4) the design of a new native oxide/AI203/MgF2 three layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

Modeling and optimal designs for dislocation and radiation tolerant single and multijunction solar cells

NASA Astrophysics Data System (ADS)

Mehrotra, A.; Alemu, A.; Freundlich, A.

2011-02-01

Crystalline defects (e.g. dislocations or grain boundaries) as well as electron and proton induced defects cause reduction of minority carrier diffusion length which in turn results in degradation of efficiency of solar cells. Hetro-epitaxial or metamorphic III-V devices with low dislocation density have high BOL efficiencies but electron-proton radiation causes degradation in EOL efficiencies. By optimizing the device design (emitter-base thickness, doping) we can obtain highly dislocated metamorphic devices that are radiation resistant. Here we have modeled III-V single and multi junction solar cells using drift and diffusion equations considering experimental III-V material parameters, dislocation density, 1 Mev equivalent electron radiation doses, thicknesses and doping concentration. Thinner device thickness leads to increment in EOL efficiency of high dislocation density solar cells. By optimizing device design we can obtain nearly same EOL efficiencies from high dislocation solar cells than from defect free III-V multijunction solar cells. As example defect free GaAs solar cell after optimization gives 11.2% EOL efficiency (under typical 5x1015cm-2 1 MeV electron fluence) while a GaAs solar cell with high dislocation density (108 cm-2) after optimization gives 10.6% EOL efficiency. The approach provides an additional degree of freedom in the design of high efficiency space cells and could in turn be used to relax the need for thick defect filtering buffer in metamorphic devices.

Modeling of defect-tolerant thin multi-junction solar cells for space application

NASA Astrophysics Data System (ADS)

Mehrotra, A.; Alemu, A.; Freundlich, A.

2012-02-01

Using drift-diffusion model and considering experimental III-V material parameters, AM0 efficiencies of lattice-matched multijunction solar cells have been calculated and the effects of dislocations and radiation damage have been analyzed. Ultrathin multi-junction devices perform better in presence of dislocations or/and radiation harsh environment compared to conventional thick multijunction devices. Our results show that device design optimization of Ga0.51In0.49P/GaAs multijunction devices leads to an improvement in EOL efficiency from 4.8%, for the conventional thick device design, to 12.7%, for the EOL optimized thin devices. In addition, an optimized defect free lattice matched Ga0.51In0.49P/GaAs solar cell under 1016cm-2 1Mev equivalent electron fluence is shown to give an EOL efficiency of 12.7%; while a Ga0.51In0.49P/GaAs solar cell with 108 cm-2 dislocation density under 1016cm-2 electron fluence gives an EOL efficiency of 12.3%. The results suggest that by optimizing the device design, we can obtain nearly the same EOL efficiencies for high dislocation metamorphic solar cells and defect filtered metamorphic multijunction solar cells. The findings relax the need for thick or graded buffer used for defect filtering in metamorphic devices. It is found that device design optimization allows highly dislocated devices to be nearly as efficient as defect free devices for space applications.

Magnetic tunnel junctions utilizing diamond-like carbon tunnel barriers

NASA Astrophysics Data System (ADS)

Cadieu, F. J.; Chen, Li; Li, Biao

2002-05-01

We have devised a method whereby thin particulate-free diamond-like carbon films can be made with good adhesion onto even room-temperature substrates. The method employs a filtered ionized carbon beam created by the vacuum impact of a high-energy, approximately 1 J per pulse, 248 nm excimer laser onto a carbon target. The resultant deposition beam can be steered and deflected by magnetic and electric fields to paint a specific substrate area. An important aspect of this deposition method is that the resultant films are particulate free and formed only as the result of atomic species impact. The vast majority of magnetic tunnel junctions utilizing thin metallic magnetic films have employed a thin oxidized layer of aluminum to form the tunnel barrier. This has presented reproducibility problems because the indicated optimal barrier thickness is only approximately 13 Å thick. Magnetic tunnel junctions utilizing Co and permalloy films made by evaporation and sputtering have been fabricated with an intervening diamond-like carbon tunnel barrier. The diamond-like carbon thickness profile has been tapered so that seven junctions with different barrier thickness can be formed at once. Magnetoresistive (MR) measurements made between successive permalloy strip ends include contributions from two junctions and from the permalloy and Co strips that act as current leads to the junctions. Magnetic tunnel junctions with thicker carbon barriers exhibit MR effects that are dominated by that of the permalloy strips. Since these tunnel barriers are formed without the need for oxygen, complete tunnel junctions can be formed with all high-vacuum processing.

Role of out-of-plane dielectric thickness in the electrostatic simulation of atomically thin lateral junctions

NASA Astrophysics Data System (ADS)

Nipane, Ankur; Zhang, Yefei; Teherani, James T.

2018-06-01

Two-dimensional materials enable novel electronic and optoelectronic devices due to their unique properties. Device modeling plays a fundamental role in developing these novel devices by providing insights into the underlying physics. In this work, we present the dramatic impact of the simulated out-of-plane dielectric thickness on the electrostatics of lateral junctions formed from atomically thin materials. We show that unlike bulk junctions, the boundary conditions on the edges of the simulation region significantly affect the electrostatics of two-dimensional (2D) lateral junctions by modifying the out-of-plane electric field. We also present an intuitive understanding of the Neumann boundary conditions imposed on the boundaries of the simulation region. The Neumann boundary conditions alter the intended simulation by generating reflections of the device across the boundaries. Finally, we derive a minimal dielectric thickness for a symmetrically doped 2D lateral p-n junction, above which the out-of-plane simulation region boundaries minimally affect the simulated electric field, electrostatic potential, and depletion width of the junction.

Junction Propagation in Organometal Halide Perovskite-Polymer Composite Thin Films.

PubMed

Shan, Xin; Li, Junqiang; Chen, Mingming; Geske, Thomas; Bade, Sri Ganesh R; Yu, Zhibin

2017-06-01

With the emergence of organometal halide perovskite semiconductors, it has been discovered that a p-i-n junction can be formed in situ due to the migration of ionic species in the perovskite when a bias is applied. In this work, we investigated the junction formation dynamics in methylammonium lead tribromide (MAPbBr 3 )/polymer composite thin films. It was concluded that the p- and n- doped regions propagated into the intrinsic region with an increasing bias, leading to a reduced intrinsic perovskite layer thickness and the formation of an effective light-emitting junction regardless of perovskite layer thicknesses (300 nm to 30 μm). The junction propagation also played a major role in deteriorating the LED operation lifetime. Stable perovskite LEDs can be achieved by restricting the junction propagation after its formation.

Cytoskeletal Stability in the Auditory Organ In Vivo: RhoA Is Dispensable for Wound Healing but Essential for Hair Cell Development.

PubMed

Anttonen, Tommi; Belevich, Ilya; Laos, Maarja; Herranen, Anni; Jokitalo, Eija; Brakebusch, Cord; Pirvola, Ulla

2017-01-01

Wound healing in the inner ear sensory epithelia is performed by the apical domains of supporting cells (SCs). Junctional F-actin belts of SCs are thin during development but become exceptionally thick during maturation. The functional significance of the thick belts is not fully understood. We have studied the role of F-actin belts during wound healing in the developing and adult cochlea of mice in vivo . We show that the thick belts serve as intracellular scaffolds that preserve the positions of surviving cells in the cochlear sensory epithelium. Junctions associated with the thick F-actin belts did not readily disassemble during wound healing. To compensate for this, basolateral membranes of SCs participated in the closure of surface breach. Because not only neighboring but also distant SCs contributed to wound healing by basolateral protrusions, this event appears to be triggered by contact-independent diffusible signals. In the search for regulators of wound healing, we inactivated RhoA in SCs, which, however, did not limit wound healing. RhoA inactivation in developing outer hair cells (OHCs) caused myosin II delocalization from the perijunctional domain and apical cell-surface enlargement. These abnormalities led to the extrusion of OHCs from the epithelium. These results demonstrate the importance of stability of the apical domain, both in wound repair by SCs and in development of OHCs, and that only this latter function is regulated by RhoA . Because the correct cytoarchitecture of the cochlear sensory epithelium is required for normal hearing, the stability of cell apices should be maintained in regenerative and protective interventions.

Single-molecule analysis of diffusion and trapping of STIM1 and Orai1 at endoplasmic reticulum–plasma membrane junctions

PubMed Central

Wu, Minnie M.; Covington, Elizabeth D.; Lewis, Richard S.

2014-01-01

Following endoplasmic reticulum (ER) Ca2+ depletion, STIM1 and Orai1 complexes assemble autonomously at ER–plasma membrane (PM) junctions to trigger store-operated Ca2+ influx. One hypothesis to explain this process is a diffusion trap in which activated STIM1 diffusing in the ER becomes trapped at junctions through interactions with the PM, and STIM1 then traps Orai1 in the PM through binding of its calcium release-activated calcium activation domain. We tested this model by analyzing STIM1 and Orai1 diffusion using single-particle tracking, photoactivation of protein ensembles, and Monte Carlo simulations. In resting cells, STIM1 diffusion is Brownian, while Orai1 is slightly subdiffusive. After store depletion, both proteins slow to the same speeds, consistent with complex formation, and are confined to a corral similar in size to ER–PM junctions. While the escape probability at high STIM:Orai expression ratios is <1%, it is significantly increased by reducing the affinity of STIM1 for Orai1 or by expressing the two proteins at comparable levels. Our results provide direct evidence that STIM-Orai complexes are trapped by their physical connections across the junctional gap, but also reveal that the complexes are surprisingly dynamic, suggesting that readily reversible binding reactions generate free STIM1 and Orai1, which engage in constant diffusional exchange with extrajunctional pools. PMID:25057023

In-Situ Grown P-N Junctions in MERCURY(1-X) Cadmium(x) Telluride for IR Detectors.

NASA Astrophysics Data System (ADS)

Rao, Vithal Rajaram

In-situ grown p-n junctions in mercury cadmium telluride (Hg_{1-x}Cd _{x}Te with x between 0.2-0.3) were fabricated and characterized in this study. Fabrication of these junctions involved the growth of p-n structures at 370^circC on CdTe substrates by Organometallic Vapor Phase Epitaxy. P-type doping with arsenic was achieved by using tertiarybutylarsine as the precursor. N-type doping was obtained either with indium, using trimethylindium as the precursor or by leaving the layer undoped. These p-n structures were processed to fabricate photodiodes. Their electrical performance was evaluated and conclusions regarding current mechanisms which determine their behavior were drawn. By varying the Hg pressure between 0.07-0.13 atm, p-type doping level in the 10^{16 }/cm^3-rm2times10 ^{17}/cm^3 range was achieved. At higher values of Hg pressure, the arsenic doping level in the layer increased significantly. This is possibly due to an increase in Te vacancies, allowing arsenic to occupy more group VI sites where they behave as acceptors. The activation efficiency of arsenic in the layers was measured to be equal to 50%. A high temperature anneal at 415 ^circC for 15 minutes did not result in any increase in the activation efficiency, possibly indicating the presence of stable As-complexes in the layer. Growth of p^+n structures was carried out in a single run. The acceptor concentration in the p-type cap layer was 5-rm10times10 ^{16}/cm^3. Indium doped n-type base layers had a carrier concentration of 1- rm2times10^{16}/cm^3 , while undoped layers had a n-type background carrier concentration of 4-rm6times10^ {14}/cm^3. The cap layer was 3 μm thick with x = 0.30, while the base layer was 8mum thick with x = 0.26. Under the growth conditions, arsenic showed a diffusion coefficient of rm2times10 ^{13}cm^2/s, which was higher than the interdiffusion coefficient of the alloy junction. This resulted in placement of the p-n junction in the lower bandgap base layer, which is necessary for high quantum efficiency devices. Photodiodes showed a cutoff wavelength of 7.5 mum, which correlates with the alloy composition of the base layer. Measured R_0 A of these diodes varied between 1-100 ohm-cm ^2. In the lower R_0A diodes, reverse bias was dominated by surface currents, possibly due to degradation of the passivating layer. Diodes with higher R_0A showed under reverse bias that trap assisted tunneling current dominated their performance. The origin of these traps is process related and could correspond to the presence of inactivated arsenic close to the p-n junction. Forward bias was dominated by diffusion and recombination currents, while the presence of additional leakage currents was evident.

Development of processing procedures for advanced silicon solar cells. [antireflection coatings and short circuit currents

NASA Technical Reports Server (NTRS)

Scott-Monck, J. A.; Stella, P. M.; Avery, J. E.

1975-01-01

Ten ohm-cm silicon solar cells, 0.2 mm thick, were produced with short circuit current efficiencies up to thirteen percent and using a combination of recent technical advances. The cells were fabricated in conventional and wraparound contact configurations. Improvement in cell collection efficiency from both the short and long wavelengths region of the solar spectrum was obtained by coupling a shallow junction and an optically transparent antireflection coating with back surface field technology. Both boron diffusion and aluminum alloying techniques were evaluated for forming back surface field cells. The latter method is less complicated and is compatible with wraparound cell processing.

Built-in electric field thickness design for betavoltaic batteries

NASA Astrophysics Data System (ADS)

Haiyang, Chen; Darang, Li; Jianhua, Yin; Shengguo, Cai

2011-09-01

Isotope source energy deposition along the thickness direction of a semiconductor is calculated, based upon which an ideal short current is evaluated for betavoltaic batteries. Electron-hole pair recombination and drifting length in a PN junction built-in electric field are extracted by comparing the measured short currents with the ideal short currents. A built-in electric field thickness design principle is proposed for betavoltaic batteries: after measuring the energy deposition depth and the carrier drift length, the shorter one should then be chosen as the built-in electric field thickness. If the energy deposition depth is much larger than the carrier drift length, a multi-junction is preferred in betavoltaic batteries and the number of the junctions should be the value of the deposition depth divided by the drift length.

Effects of oxygen-inserted layers on diffusion of boron, phosphorus, and arsenic in silicon for ultra-shallow junction formation

NASA Astrophysics Data System (ADS)

Zhang, X.; Connelly, D.; Takeuchi, H.; Hytha, M.; Mears, R. J.; Rubin, L. M.; Liu, T.-J. K.

2018-03-01

The effects of oxygen-inserted (OI) layers on the diffusion of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) are investigated, for ultra-shallow junction formation by high-dose ion implantation followed by rapid thermal annealing. The projected range (Rp) of the implanted dopants is shallower than the depth of the OI layers. Secondary ion mass spectrometry is used to compare the dopant profiles in silicon samples that have OI layers against the dopant profiles in control samples that do not have OI layers. Diffusion is found to be substantially retarded by the OI layers for B and P, and less for As, providing shallower junction depth. The experimental results suggest that the OI layers serve to block the diffusion of Si self-interstitials and thereby effectively reduce interstitial-aided diffusion beyond the depth of the OI layers. The OI layers also help to retain more dopants within the Si, which technology computer-aided design simulations indicate to be beneficial for achieving shallower junctions with lower sheet resistance to enable further miniaturization of planar metal-oxide-semiconductor field-effect transistors for improved integrated-circuit performance and cost per function.

Nanoscale doping of compound semiconductors by solid phase dopant diffusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Jaehyun, E-mail: jaehyun.ahn@utexas.edu; Koh, Donghyi; Roy, Anupam

2016-03-21

Achieving damage-free, uniform, abrupt, ultra-shallow junctions while simultaneously controlling the doping concentration on the nanoscale is an ongoing challenge to the scaling down of electronic device dimensions. Here, we demonstrate a simple method of effectively doping ΙΙΙ-V compound semiconductors, specifically InGaAs, by a solid phase doping source. This method is based on the in-diffusion of oxygen and/or silicon from a deposited non-stoichiometric silicon dioxide (SiO{sub x}) film on InGaAs, which then acts as donors upon activation by annealing. The dopant profile and concentration can be controlled by the deposited film thickness and thermal annealing parameters, giving active carrier concentration ofmore » 1.4 × 10{sup 18 }cm{sup −3}. Our results also indicate that conventional silicon based processes must be carefully reviewed for compound semiconductor device fabrication to prevent unintended doping.« less

Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darbandi, A.; Watkins, S. P., E-mail: simonw@sfu.ca

Minority carrier diffusion lengths in both p-type and n-type GaAs nanowires were studied using electron beam induced current by means of a nanoprobe technique without lithographic processing. The diffusion lengths were determined for Au/GaAs rectifying junctions as well as axial p-n junctions. By incorporating a thin lattice-matched InGaP passivating shell, a 2-fold enhancement in the minority carrier diffusion lengths and one order of magnitude reduction in the surface recombination velocity were achieved.

Amorphous semiconductor solar cell

DOEpatents

Dalal, Vikram L.

1981-01-01

A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

Molecular Diffusion through Cyanobacterial Septal Junctions.

PubMed

Nieves-Morión, Mercedes; Mullineaux, Conrad W; Flores, Enrique

2017-01-03

Heterocyst-forming cyanobacteria grow as filaments in which intercellular molecular exchange takes place. During the differentiation of N 2 -fixing heterocysts, regulators are transferred between cells. In the diazotrophic filament, vegetative cells that fix CO 2 through oxygenic photosynthesis provide the heterocysts with reduced carbon and heterocysts provide the vegetative cells with fixed nitrogen. Intercellular molecular transfer has been traced with fluorescent markers, including calcein, 5-carboxyfluorescein, and the sucrose analogue esculin, which are observed to move down their concentration gradient. In this work, we used fluorescence recovery after photobleaching (FRAP) assays in the model heterocyst-forming cyanobacterium Anabaena sp. strain PCC 7120 to measure the temperature dependence of intercellular transfer of fluorescent markers. We find that the transfer rate constants are directly proportional to the absolute temperature. This indicates that the "septal junctions" (formerly known as "microplasmodesmata") linking the cells in the filament allow molecular exchange by simple diffusion, without any activated intermediate state. This constitutes a novel mechanism for molecular transfer across the bacterial cytoplasmic membrane, in addition to previously characterized mechanisms for active transport and facilitated diffusion. Cyanobacterial septal junctions are functionally analogous to the gap junctions of metazoans. Although bacteria are frequently considered just as unicellular organisms, there are bacteria that behave as true multicellular organisms. The heterocyst-forming cyanobacteria grow as filaments in which cells communicate. Intercellular molecular exchange is thought to be mediated by septal junctions. Here, we show that intercellular transfer of fluorescent markers in the cyanobacterial filament has the physical properties of simple diffusion. Thus, cyanobacterial septal junctions are functionally analogous to metazoan gap junctions, although their molecular components appear unrelated. Like metazoan gap junctions, the septal junctions of cyanobacteria allow the rapid intercellular exchange of small molecules, without stringent selectivity. Our finding expands the repertoire of mechanisms for molecular transfer across the plasma membrane in prokaryotes. Copyright © 2017 Nieves-Morión et al.

Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions.

PubMed

Gutsche, Christoph; Niepelt, Raphael; Gnauck, Martin; Lysov, Andrey; Prost, Werner; Ronning, Carsten; Tegude, Franz-Josef

2012-03-14

Axial GaAs nanowire p-n diodes, possibly one of the core elements of future nanowire solar cells and light emitters, were grown via the Au-assisted vapor-liquid-solid mode, contacted by electron beam lithography, and investigated using electron beam induced current measurements. The minority carrier diffusion lengths and dynamics of both, electrons and holes, were determined directly at the vicinity of the p-n junction. The generated photocurrent shows an exponential decay on both sides of the junction and the extracted diffusion lengths are about 1 order of magnitude lower compared to bulk material due to surface recombination. Moreover, the observed strong diameter-dependence is well in line with the surface-to-volume ratio of semiconductor nanowires. Estimating the surface recombination velocities clearly indicates a nonabrupt p-n junction, which is in essential agreement with the model of delayed dopant incorporation in the Au-assisted vapor-liquid-solid mechanism. Surface passivation using ammonium sulfide effectively reduces the surface recombination and thus leads to higher minority carrier diffusion lengths. © 2012 American Chemical Society

Status of diffused junction p+n InP solar cells for space applications

NASA Technical Reports Server (NTRS)

Faur, Mircea; Goradia, C.; Faur, Maria; Fatemi, N. S.; Jenkins, P. P.; Flood, D. J.; Brinker, D. J.; Wilt, D. M.; Bailey, S.; Goradia, M.

1994-01-01

Recently, we have succeeded in fabricating diffused junction p(sup +)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(sup +)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p(sup +) InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

Status of diffused junction p+n InP solar cells for space applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Faur, M.; Goradia, C.; Faur, M.

1994-09-01

Recently, the authors have succeeded in fabricating diffused junction p{sup +}n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V{sub OC}) of 887.6 mV, which, to the best of their knowledge, is higher than previously reported V{sub OC} values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating andmore » emitter thickness. This paper summarizes recent advances in the technology of fabrication of p{sup +}n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p{sup +} InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.« less

Developments toward an 18% efficient silicon solar cell

NASA Technical Reports Server (NTRS)

Meulenberg, A., Jr.

1983-01-01

Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.

Analysis and evalaution in the production process and equipment area of the low-cost solar array project. [including modifying gaseous diffusion and using ion implantation

NASA Technical Reports Server (NTRS)

Goldman, H.; Wolf, M.

1979-01-01

The manufacturing methods for photovoltaic solar energy utilization are assessed. Economic and technical data on the current front junction formation processes of gaseous diffusion and ion implantation are presented. Future proposals, including modifying gaseous diffusion and using ion implantation, to decrease the cost of junction formation are studied. Technology developments in current processes and an economic evaluation of the processes are included.

New high-efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Daud, T.; Crotty, G. T.

1985-01-01

A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.

Design and optimization of ARC less InGaP/GaAs single-/multi-junction solar cells with tunnel junction and back surface field layers

NASA Astrophysics Data System (ADS)

Chee, Kuan W. A.; Hu, Yuning

2018-07-01

There has always been an inexorable interest in the solar industry in boosting the photovoltaic conversion efficiency. This paper presents a theoretical and numerical simulation study of the effects of key design parameters on the photoelectric performance of single junction (InGaP- or GaAs-based) and dual junction (InGaP/GaAs) inorganic solar cells. The influence of base layer thickness, base doping concentration, junction temperature, back surface field layer composition and thickness, and tunnel junction material, were correlated with open circuit voltage, short-circuit current, fill factor and power conversion efficiency performance. The InGaP/GaAs dual junction solar cell was optimized with the tunnel junction and back surface field designs, yielding a short-circuit current density of 20.71 mAcm-2 , open-circuit voltage of 2.44 V and fill factor of 88.6%, and guaranteeing an optimal power conversion efficiency of at least 32.4% under 1 sun AM0 illumination even without an anti-reflective coating.

First principles calculation for Gilbert damping constants in ferromagnetic/non-magnetic junctions

NASA Astrophysics Data System (ADS)

Hiramatsu, R.; Miura, D.; Sakuma, A.

2018-05-01

We evaluated an intrinsic α in ferromagnetic (FM)/non-magnetic (NM) junctions from first principles (FM = Co, Fe, and Ni and NM = Cu, Pd, and Pt) to investigate the effects of the inserted NM layer. α is calculated by liner muffin-tin orbital methods based on the torque-correlation model. We confirmed that Gilbert damping is enhanced and saturated as NM thickness increases, and that the enhancement is greater in NM materials having a stronger spin-orbital interaction. By contrast, the calculated FM thickness dependences of α show that Gilbert damping tends to decrease and be saturated as the FM thickness increases. Under the torque-correlation model, the dependences of α on FM and NM thickness can be explained by considering the electronic structure of the total system, including junction interfaces, which exhibit similar behaviors derived by spin pumping theory.

An accurate two-dimensional LBIC solution for bipolar transistors

NASA Astrophysics Data System (ADS)

Benarab, A.; Baudrand, H.; Lescure, M.; Boucher, J.

1988-05-01

A complete solution of the diffusion problem of carriers generated by a located light beam in the emitter and base region of a bipolar structure is presented. Green's function method and moment method are used to solve the 2-D diffusion equation in these regions. From the Green's functions solution of these equations, the light beam induced currents (LBIC) in the different junctions of the structure due to an extended generation represented by a rectangular light spot; are thus decided. The equations of these currents depend both on the parameters which characterise the structure, surface states, dimensions of the emitter and the base region, and the characteristics of the light spot, that is to say, the width and the wavelength. Curves illustrating the variation of the various LBIC in the base region junctions as a function of the impact point of the light beam ( x0) for different values of these parameters are discussed. In particular, the study of the base-emitter currents when the light beam is swept right across the sample illustrates clearly a good geometrical definition of the emitter region up to base end of the emitter-base space-charge areas and a "whirl" lateral diffusion beneath this region, (i.e. the diffusion of the generated carriers near the surface towards the horizontal base-emitter junction and those created beneath this junction towards the lateral (B-E) junctions).

S–Te Interdiffusion within Grains and Grain Boundaries in CdTe Solar Cells

DOE PAGES

Li, C.; Poplawsky, J.; Paudel, N.; ...

2014-09-19

At the CdTe/CdS interface, a significant Te-S interdiffusion has been found a few nanometers into the grain interiors with scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). S substitution at Te sites has been directly resolved in CdTe with STEM Z-contrast images. Moreover, when enough S substitutes for Te, a structural transformation from zinc-blende to wurtzite has been observed. Cl segregation has also been found at the interface. STEM electron-beam-induced current (EBIC) shows that the p-n junction occurs a few nm into the CdTe grains, which is consistent with the S diffusion range we observe. The shiftmore » of the p-n junction suggests a buried homo-junction which would help reduce non-radiative recombination at the junction. Meanwhile, long-range S diffusion in CdTe grain boundaries (GBs) has been detected, as well as Te and Cl diffusion in CdS GBs.« less

Structural basis for the selective permeability of channels made of communicating junction proteins.

PubMed

Ek-Vitorin, Jose F; Burt, Janis M

2013-01-01

The open state(s) of gap junction channels is evident from their permeation by small ions in response to an applied intercellular (transjunctional/transchannel) voltage gradient. That an open channel allows variable amounts of current to transit from cell-to-cell in the face of a constant intercellular voltage difference indicates channel open/closing can be complete or partial. The physiological significance of such open state options is, arguably, the main concern of junctional regulation. Because gap junctions are permeable to many substances, it is sensible to inquire whether and how each open state influences the intercellular diffusion of molecules as valuable as, but less readily detected than current-carrying ions. Presumably, structural changes perceived as shifts in channel conductivity would significantly alter the transjunctional diffusion of molecules whose limiting diameter approximates the pore's limiting diameter. Moreover, changes in junctional permeability to some molecules might occur without evident changes in conductivity, either at macroscopic or single channel level. Open gap junction channels allow the exchange of cytoplasmic permeants between contacting cells by simple diffusion. The identity of such permeants, and the functional circumstances and consequences of their junctional exchange presently constitute the most urgent (and demanding) themes of the field. Here, we consider the necessity for regulating this exchange, the possible mechanism(s) and structural elements likely involved in such regulation, and how regulatory phenomena could be perceived as changes in chemical vs. electrical coupling; an overall reflection on our collective knowledge of junctional communication is then applied to suggest new avenues of research. This article is part of a Special Issue entitled: The Communicating junctions, roles and dysfunctions. Copyright © 2012 Elsevier B.V. All rights reserved.

Structural basis for the selective permeability of channels made of communicating junction proteins

PubMed Central

Ek-Vitorin, Jose F.; Burt, Janis M.

2012-01-01

The open state(s) of gap junction channels is evident from their permeation by small ions in response to an applied intercellular (transjunctional/transchannel) voltage gradient. That an open channel allows variable amounts of current to transit from cell-to-cell in the face of a constant intercellular voltage difference indicates channel open/closing can be complete or partial. The physiological significance of such open state options is, arguably, the main concern of junctional regulation. Because gap junctions are permeable to many substances, it is sensible to inquire whether and how each open state influences the intercellular diffusion of molecules as valuable as, but less readily detected than current-carrying ions. Presumably, structural changes perceived as shifts in channel conductivity would significantly alter the transjunctional diffusion of molecules whose limiting diameter approximates the pore’s limiting diameter. Moreover, changes in junctional permeability to some molecules might occur without evident changes in conductivity, either at macroscopic or single channel level. Open gap junction channels allow the exchange of cytoplasmic permeants between contacting cells by simple diffusion. The identity of such permeants, and the functional circumstances and consequences of their junctional exchange presently constitute the most urgent (and demanding) themes of the field. Here, we consider the necessity for regulating this exchange, the possible mechanism(s) and structural elements likely involved in such regulation, and how regulatory phenomena could be perceived as changes in chemical vs. electrical coupling; an overall reflection on our collective knowledge of junctional communication is then applied to suggest new avenues of research. PMID:22342665

Determination of the thickness of Al2O3 barriers in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Buchanan, J. D. R.; Hase, T. P. A.; Tanner, B. K.; Hughes, N. D.; Hicken, R. J.

2002-07-01

The barrier thickness in magnetic spin-dependent tunnel junctions with Al2O3 barriers has been measured using grazing incidence x-ray reflectivity and by fitting the tunneling current to the Simmons model. We have studied the effect of glow discharge oxidation time on the barrier structure, revealing a substantial increase in Al2O3 thickness with oxidation. The greater thickness of barrier measured using grazing incidence x-ray reflectivity compared with that obtained by fitting current density-voltage to the Simmons electron tunneling model suggests that electron tunneling is localized to specific regions across the barrier, where the thickness is reduced by fluctuations due to nonconformal roughness.

Thermo-electric modular structure and method of making same

DOEpatents

Freedman, N.S.; Horsting, C.W.; Lawrence, W.F.; Carrona, J.J.

1974-01-29

A method is presented for making a thermoelectric module wtth the aid of an insulating wafer having opposite metallized surfaces, a pair of similar equalizing sheets of metal, a hot-junction strap of metal, a thermoelectric element having hot- and cold-junction surfaces, and a radiator sheet of metal. The method comprises the following steps: brazing said equalizer sheets to said opposite metallized surfaces, respectively, of said insulating wafer with pure copper in a non-oxidizing ambient; brazing one surface of said hot-junction strap to one of the surfaces of said equalizing sheet with a nickel-gold alloy in a non- oxidizing ambient; and diffusion bonding said hot-junction surface of said thermoelectric element to the other surface of said hot-junction strap and said radiator sheet to said cold-junction surface of said thermoelectric element, said diffusion bonding being carried out in a non-oxidizing ambient, under compressive loading, at a temperature of about 550 deg C., and for about one-half hour. (Official Gazette)

Design optimization of GaAs betavoltaic batteries

NASA Astrophysics Data System (ADS)

Chen, Haiyanag; Jiang, Lan; Chen, Xuyuan

2011-06-01

GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm-2 63Ni, the open circuit voltage of the optimized batteries is about ~0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P+PN+ junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm-2, which indicates a carrier diffusion length of less than 1 µm. The overall results show that multi-layer P+PN+ junctions are the preferred structures for GaAs betavoltaic battery design.

Excimer laser annealing: A gold process for CZ silicon junction formation

NASA Technical Reports Server (NTRS)

Wong, David C.; Bottenberg, William R.; Byron, Stanley; Alexander, Paul

1987-01-01

A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.

Current phase relation from graphs and diagrams and application to thick ferromagnetic Josephson junctions

NASA Astrophysics Data System (ADS)

Margaris, I.; Paltoglou, V.; Flytzanis, N.

2018-05-01

In this work we present a method of representing terms in the current-phase-relation of a ballistic Josephson junction by combinations of diagrams, used in previous work to represent an equivalent of the matching condition determinant of the junction. This is accomplished by the expansion of the logarithm of this determinant in Taylor series and keeping track of surviving terms, i.e. terms that do not annihilate each other. The types of the surviving terms are represented by connected graphs, whose points represent diagrammatic terms of the determinant expansion. Then the theory is applied to obtain approximations of the current-phase relation of relatively thick ballistic ferromagnetic Josephson junctions with non-collinear magnetizations. This demonstrates the versatility of the method in developing approximations schemes and providing physical insight into the nature of contributions to the supercurrent from the available particle excitations in the junction. We also discuss the strong second harmonic contribution to the supercurrent in junctions with three mutually orthogonal magnetization vectors and a weak intermediate ferromagnet.

Remodelling of cellular excitation (reaction) and intercellular coupling (diffusion) by chronic atrial fibrillation represented by a reaction-diffusion system

NASA Astrophysics Data System (ADS)

Zhang, Henggui; Garratt, Clifford J.; Kharche, Sanjay; Holden, Arun V.

2009-06-01

Human atrial tissue is an excitable system, in which myocytes are excitable elements, and cell-to-cell electrotonic interactions are via diffusive interactions of cell membrane potentials. We developed a family of excitable system models for human atrium at cellular, tissue and anatomical levels for both normal and chronic atrial fibrillation (AF) conditions. The effects of AF-induced remodelling of cell membrane ionic channels (reaction kinetics) and intercellular gap junctional coupling (diffusion) on atrial excitability, conduction of excitation waves and dynamics of re-entrant excitation waves are quantified. Both ionic channel and gap junctional coupling remodelling have rate dependent effects on atrial propagation. Membrane channel conductance remodelling allows the propagation of activity at higher rates than those sustained in normal tissue or in tissue with gap junctional remodelling alone. Membrane channel conductance remodelling is essential for the propagation of activity at rates higher than 300/min as seen in AF. Spatially heterogeneous gap junction coupling remodelling increased the risk of conduction block, an essential factor for the genesis of re-entry. In 2D and 3D anatomical models, the dynamical behaviours of re-entrant excitation waves are also altered by membrane channel modelling. This study provides insights to understand the pro-arrhythmic effects of AF-induced reaction and diffusion remodelling in atrial tissue.

Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.

1987-01-01

Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

NASA Astrophysics Data System (ADS)

Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

2015-03-01

GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

Continuity of monolayer-bilayer junctions for localization of lipid raft microdomains in model membranes

DOE PAGES

Ryu, Yong -Sang; Wittenberg, Nathan J.; Suh, Jeng -Hun; ...

2016-05-27

We show that the selective localization of cholesterol-rich domains and associated ganglioside receptors prefer to occur in the monolayer across continuous monolayer-bilayer junctions (MBJs) in supported lipid membranes. For the MBJs, glass substrates were patterned with poly(dimethylsiloxane) (PDMS) oligomers by thermally-assisted contact printing, leaving behind 3 nm-thick PDMS patterns. The hydrophobicity of the transferred PDMS patterns was precisely tuned by the stamping temperature. Lipid monolayers were formed on the PDMS patterned surface while lipid bilayers were on the bare glass surface. Due to the continuity of the lipid membranes over the MBJs, essentially free diffusion of lipids was allowed betweenmore » the monolayer on the PDMS surface and the upper leaflet of the bilayer on the glass substrate. The preferential localization of sphingomyelin, ganglioside GM1 and cholesterol in the monolayer region enabled to develop raft microdomains through coarsening of nanorafts. Furthermore, our methodology provides a simple and effective scheme of non-disruptive manipulation of the chemical landscape associated with lipid phase separations, which leads to more sophisticated applications in biosensors and as cell culture substrates.« less

The Effect of Hypertension on the Transport of LDL Across the Deformable Arterial Wall

NASA Astrophysics Data System (ADS)

Dabagh, Mahsa; Jalali, Payman

2010-05-01

The influences of increased endothelial cell turnover and deformation of the intima on the transport of low-density lipoprotein (LDL) under hypertension are investigated by applying a multilayered model of aortic wall. The thickness and properties of the endothelium, intima, internal elastic lamina (IEL), and media are affected by the transmural pressure. Navier-Stokes and Brinkman equations are applied for the transport of the transmural flow and the convective-diffusion equation is solved for LDL transport. LDL macromolecules enter the intima through leaky junctions, and then pass through the media layer where they permeate over the surface of smooth muscle cells (SMC). Uptake of LDL by cells is modeled through a uniform reaction evenly distributed in the macroscopically homogeneous media layer. The results show that transmural pressure significantly affects the LDL fluxes across the leaky junction, the intima, fenestral pores in the IEL, and the media layer. Many realistic predictions including the proper magnitudes for the permeability of endothelium and intimal layers, and the hydraulic conductivity of all layers as well as their trends with pressure are predicted by the present model.

Continuity of Monolayer-Bilayer Junctions for Localization of Lipid Raft Microdomains in Model Membranes

PubMed Central

Ryu, Yong-Sang; Wittenberg, Nathan J.; Suh, Jeng-Hun; Lee, Sang-Wook; Sohn, Youngjoo; Oh, Sang-Hyun; Parikh, Atul N.; Lee, Sin-Doo

2016-01-01

We show that the selective localization of cholesterol-rich domains and associated ganglioside receptors prefer to occur in the monolayer across continuous monolayer-bilayer junctions (MBJs) in supported lipid membranes. For the MBJs, glass substrates were patterned with poly(dimethylsiloxane) (PDMS) oligomers by thermally-assisted contact printing, leaving behind 3 nm-thick PDMS patterns. The hydrophobicity of the transferred PDMS patterns was precisely tuned by the stamping temperature. Lipid monolayers were formed on the PDMS patterned surface while lipid bilayers were on the bare glass surface. Due to the continuity of the lipid membranes over the MBJs, essentially free diffusion of lipids was allowed between the monolayer on the PDMS surface and the upper leaflet of the bilayer on the glass substrate. The preferential localization of sphingomyelin, ganglioside GM1 and cholesterol in the monolayer region enabled to develop raft microdomains through coarsening of nanorafts. Our methodology provides a simple and effective scheme of non-disruptive manipulation of the chemical landscape associated with lipid phase separations, which leads to more sophisticated applications in biosensors and as cell culture substrates. PMID:27230411

Existence of negative differential thermal conductance in one-dimensional diffusive thermal transport

NASA Astrophysics Data System (ADS)

Hu, Jiuning; Chen, Yong P.

2013-06-01

We show that in a finite one-dimensional (1D) system with diffusive thermal transport described by the Fourier's law, negative differential thermal conductance (NDTC) cannot occur when the temperature at one end is fixed and there are no abrupt junctions. We demonstrate that NDTC in this case requires the presence of junction(s) with temperature-dependent thermal contact resistance (TCR). We derive a necessary and sufficient condition for the existence of NDTC in terms of the properties of the TCR for systems with a single junction. We show that under certain circumstances we even could have infinite (negative or positive) differential thermal conductance in the presence of the TCR. Our predictions provide theoretical basis for constructing NDTC-based devices, such as thermal amplifiers, oscillators, and logic devices.

Analysis of the interaction of an electron beam with a solar cell. III - The effect of spacial variations of the number density of recombination centers on SEM measurements

NASA Technical Reports Server (NTRS)

Von Roos, O.

1979-01-01

By means of an exactly soluble model the short circuit current generated by a scanning electron microscope in a P-N junction has been determined in cases where the trap density is inhomogeneous. The diffusion length for minority carriers becomes then dependent on the spacial coordinates. It is shown that in this case the dependence of the Isc on characteristic parameters as cell thickness, distance of the beam excitation spot from ohmic contacts, etc., becomes very intricate. This fact precludes the determination of the local diffusion length in the usual manner. Although the model is somewhat simplified in order to make it amenable to exact solutions, it is nevertheless realistic enough to lead to the conclusion that SEM measurements of bulk transport parameters in inhomogeneous semiconductor material are impractical since they may lead to serious errors in the interpretation of the data by customary means.

Prediction of 4H-SiC betavoltaic microbattery characteristics based on practical Ni-63 sources.

PubMed

Gui, Gui; Zhang, Kan; Blanchard, James P; Ma, Zhenqiang

2016-01-01

We have investigated the performance of 4H-SiC betavoltaic microbatteries under exposure to the practical Ni-63 sources using the Monte Carlo method and Synopsys® Medici device simulator. A typical planar p-n junction betavoltaic device with the Ni-63 source of 20% purity on top is modeled in the simulation. The p-n junction structure includes a p+ layer, a p- layer, an n+ layer, and an n- layer. In order to obtain an accurate and valid predication, our simulations consider several practical factors, including isotope impurities, self-absorption, and full beta energy spectra. By simulating the effects of both the p-n junction configuration and the isotope source thickness on the battery output performance, we have achieved the optimal design of the device and maximum energy conversion efficiency. Our simulation results show that the energy conversion efficiency increases as the doping concentration and thickness of the p- layer increase, whereas it is independent of the total depth of the p-n junction. Furthermore, the energy conversion efficiency decreases as the thickness of the practical Ni-63 source increases, because of self-absorption in the isotope source. Therefore, we propose that a p-n junction betavoltaic cell with a thicker and heavily doped p- layer under exposure to a practical Ni-63 source with an appreciable thickness could produce the optimal energy conversion efficiency. Copyright © 2015 Elsevier Ltd. All rights reserved.

Method of making high breakdown voltage semiconductor device

DOEpatents

Arthur, Stephen D.; Temple, Victor A. K.

1990-01-01

A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

An induced junction photovoltaic cell

NASA Technical Reports Server (NTRS)

Call, R. L.

1974-01-01

Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.

Determination of bulk diffusion lengths for angle-lapped semiconductor material via the scanning electron microscope: A theoretical analysis

NASA Technical Reports Server (NTRS)

Vonroos, O.

1978-01-01

A standard procedure for the determination of the minority carrier diffusion length by means of a scanning electron microscope (SEM) consists in scanning across an angle-lapped surface of a P-N junction and measuring the resultant short circuit current I sub sc as a function of beam position. A detailed analysis of the I sub sc originating from this configuration is presented. It is found that, for a point source excitation, the I sub sc depends very simply on x, the variable distance between the surface and the junction edge. The expression for the I sub sc of a planar junction device is well known. If d, the constant distance between the plane of the surface of the semiconductor and the junction edge in the expression for the I of a planar junction is merely replaced by x, the variable distance of the corresponding angle-lapped junction, an expression results which is correct to within a small fraction of a percent as long as the angle between the surfaces, 2 theta sub 1, is smaller than 10 deg.

The alterations of the sigmoid-rectal junction in diverticular disease of the colon revealed by MR-defecography.

PubMed

Romagnoli, Francesco; Colaiacomo, Maria Chiara; De Milito, Ritanna; Modini, Claudio; Gualdi, Gianfranco; Catani, Marco

2014-01-01

The sigmoidorectal junction (SRJ) has been defined as an anatomical sphincter with particular physiological behavior that regulates sigmoid and rectum evacuation. Its function in clinical conditions, such as diverticular disease has been advocated. The aim of our study is to identify the SRJ and to compare the morphometric and dynamic features of the SRJ between patients with diverticular disease and healthy subjects using MR-defecography. Sixteen individuals, eight with uncomplicated diverticular disease and eight healthy subjects, were studied using MR-defecography to identify the SRJ and to compare the morphometric and dynamic features observed. In each subject studied, MR-defecography was able to identify the SRJ. This resulted in the identification of a discrete anatomical entity with a mean length of 31.23 mm, located in front of the first sacral vertebra (S1) and at a mean distance of 15.55 cm from the anal verge, with a mean wall thickness of 4.45 mm, significantly different from the sigmoid and rectal parietal thickness. The SRJ wall was significantly thicker in patients with diverticular disease than the controls (P = 0.005), showing a unique shape and behavior in dynamic sequences. Our findings support the hypothesis that SRJ plays a critical role in patients with symptomatic diverticular disease; further investigation may clarify whether specific SRJ analysis, such as MR-defecography, would predict inflammatory complications of this diffuse and heterogenic disease.

Modeling and Simulation of a Dual-Junction CIGS Solar Cell Using Silvaco ATLAS

DTIC Science & Technology

2012-12-01

junction Copper Indium Gallium Selenide (CIGS) photovoltaic cell is investigated in this thesis. Research into implementing a dual-junction solar cell...Silvaco ATLASTM model of a single CIGS cell was created by utilizing actual solar cell parameters (such as layer thicknesses, gallium ratio, doping...THIS PAGE INTENTIONALLY LEFT BLANK v ABSTRACT The potential of designing a dual-junction Copper Indium Gallium Selenide (CIGS) photovoltaic

2D matrix engineering for homogeneous quantum dot coupling in photovoltaic solids

NASA Astrophysics Data System (ADS)

Xu, Jixian; Voznyy, Oleksandr; Liu, Mengxia; Kirmani, Ahmad R.; Walters, Grant; Munir, Rahim; Abdelsamie, Maged; Proppe, Andrew H.; Sarkar, Amrita; García de Arquer, F. Pelayo; Wei, Mingyang; Sun, Bin; Liu, Min; Ouellette, Olivier; Quintero-Bermudez, Rafael; Li, Jie; Fan, James; Quan, Lina; Todorovic, Petar; Tan, Hairen; Hoogland, Sjoerd; Kelley, Shana O.; Stefik, Morgan; Amassian, Aram; Sargent, Edward H.

2018-06-01

Colloidal quantum dots (CQDs) are promising photovoltaic (PV) materials because of their widely tunable absorption spectrum controlled by nanocrystal size1,2. Their bandgap tunability allows not only the optimization of single-junction cells, but also the fabrication of multijunction cells that complement perovskites and silicon3. Advances in surface passivation2,4-7, combined with advances in device structures8, have contributed to certified power conversion efficiencies (PCEs) that rose to 11% in 20169. Further gains in performance are available if the thickness of the devices can be increased to maximize the light harvesting at a high fill factor (FF). However, at present the active layer thickness is limited to 300 nm by the concomitant photocarrier diffusion length. To date, CQD devices thicker than this typically exhibit decreases in short-circuit current (JSC) and open-circuit voltage (VOC), as seen in previous reports3,9-11. Here, we report a matrix engineering strategy for CQD solids that significantly enhances the photocarrier diffusion length. We find that a hybrid inorganic-amine coordinating complex enables us to generate a high-quality two-dimensionally (2D) confined inorganic matrix that programmes internanoparticle spacing at the atomic scale. This strategy enables the reduction of structural and energetic disorder in the solid and concurrent improvements in the CQD packing density and uniformity. Consequently, planar devices with a nearly doubled active layer thicknesses ( 600 nm) and record values of JSC (32 mA cm-2) are fabricated. The VOC improved as the current was increased. We demonstrate CQD solar cells with a certified record efficiency of 12%.

Imaging the Solar Cell P-N Junction and Depletion Region Using Secondary Electron Contrast

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heath, J. T.; Jiang, C. S.; Al-Jassim, M. M.

2011-01-01

We report on secondary electron (SE) images of cross-sectioned multicrystalline Si and GaAs/GaInP solar cell devices, focusing on quantifying the relationship between the apparent n{sup +}-p contrast and characteristic electronic features of the device. These samples allow us to compare the SE signal from devices which have very different physical characteristics: differing materials, diffused junction versus abrupt junction, heterojunction versus homojunction. Despite these differences, we find that the SE image contrast for both types of sample, and as a function of reverse bias across the diode, closely agrees with PC1D simulations of the bulk electrostatic potential in the device, accuratelymore » yielding the depletion edge and width. A spatial derivative of the SE data shows a local maximum at the metallurgical junction. Such data are valuable, for example, in studying the conformity of a diffused junction to the textured surface topography. These data also extend our understanding of the origin of the SE contrast.« less

Fabrication of Optimized Superconducting Phase Inverters Based on Superconductor-Ferromagnet-Superconductor pi π -Junctions

NASA Astrophysics Data System (ADS)

Bolginov, V. V.; Rossolenko, A. N.; Shkarin, A. B.; Oboznov, V. A.; Ryazanov, V. V.

2018-03-01

We have implemented a trilayer technological approach to fabricate Nb-Cu_{0.47} Ni_{0.53}-Nb superconducting phase inverters (π -junctions) with enhanced critical current. Within this technique, all three layers of the superconductor-ferromagnet-superconductor junction deposited in a single vacuum cycle that have allowed us to obtain π -junctions with critical current density up to 20 kA/cm^2. The value achieved is a factor of 10 higher than for the step-by-step method used in earlier works. Our additional experiments have shown that this difference is related to a bilayered CuNi/Cu barrier used in the case of the step-by-step technique and interlayer diffusion at the CuNi/Cu interface. We show that the interlayer diffusion can be utilized for fine tuning of the 0{-}π transition temperature of already fabricated junctions. The results obtained open new opportunities for the CuNi-based phase inverters in digital and quantum Josephson electronics.

Tight junctions and the modulation of barrier function in disease

PubMed Central

2008-01-01

Tight junctions create a paracellular barrier in epithelial and endothelial cells protecting them from the external environment. Two different classes of integral membrane proteins constitute the tight junction strands in epithelial cells and endothelial cells, occludin and members of the claudin protein family. In addition, cytoplasmic scaffolding molecules associated with these junctions regulate diverse physiological processes like proliferation, cell polarity and regulated diffusion. In many diseases, disruption of this regulated barrier occurs. This review will briefly describe the molecular composition of the tight junctions and then present evidence of the link between tight junction dysfunction and disease. PMID:18415116

Study of nickel silicide formation by physical vapor deposition techniques

NASA Astrophysics Data System (ADS)

Pancharatnam, Shanti

Metal silicides are used as contacts to the highly n-doped emitter in photovoltaic devices. Thin films of nickel silicide (NiSi) are of particular interest for Si-based solar cells, as they form at lower temperature and consume less silicon. However, interfacial oxide limits the reduction in sheet resistance. Hence, different diffusion barriers were investigated with regard to optimizing the conductivity and thermal stability. The formation of NiSi, and if it can be doped to have good contact with the n-side of a p-n junction were studied. Reduction of the interfacial oxide by the interfacial Ti layer to allow the formation of NiSi was observed. Silicon was treated in dilute hydrofluoric acid for removing the surface oxide layer. Ni and a Ti diffusion barrier were deposited on Si by physical vapor deposition (PVD) methods - electron beam evaporation and sputtering. The annealing temperature and time were varied to observe the stability of the deposited film. The films were then etched to observe the retention of the silicide. Characterization was done using scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and Rutherford back scattering (RBS). Sheet resistance was measured using the four-point probe technique. Annealing temperatures from 300°C showed films began to agglomerate indicating some diffusion between Ni and Si in the Ti layer, also supported by the compositional analysis in the Auger spectra. Films obtained by evaporation and sputtering were of high quality in terms of coverage over substrate area and uniformity. Thicknesses of Ni and Ti were optimized to 20 nm and 10 nm respectively. Resistivity was low at these thicknesses, and reduced by about half post annealing at 300°C for 8 hours. Thus a low resistivity contact was obtained at optimized thicknesses of the metal layers. It was also shown that some silicide formation occurs at temperatures starting from 300°C and can thus be used to make good silicide contacts.

Application of the SEM to the measurement of solar cell parameters

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Andrews, C. W.

1977-01-01

Techniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

Characterization of electrokinetic gating valve in microfluidic channels.

PubMed

Zhang, Guiseng; Du, Wei; Liu, Bi-Feng; Hisamoto, Hideaki; Terabe, Shigeru

2007-02-12

Electrokinetic gating, functioning as a micro-valve, has been widely employed in microfluidic chips for sample injection and flow switch. Investigating its valving performance is fundamentally vital for microfluidics and microfluidics-based chemical analysis. In this paper, electrokinetic gating valve in microchannels was evaluated using optical imaging technique. Microflow profiles at channels junction were examined, revealing that molecular diffusion played a significant role in the valving disable; which could cause analyte leakage in sample injection. Due to diffusion, the analyte crossed the interface of the analyte flow and gating flow, and then formed a cometic tail-like diffusion area at channels junction. From theoretical calculation and some experimental evidences, the size of the area was related to the diffusion coefficient and the velocity of analytes. Additionally, molecular diffusion was also believed to be another reason of sampling bias in gated injection.

Die attach dimension and material on thermal conductivity study for high power COB LED

NASA Astrophysics Data System (ADS)

Sarukunaselan, K.; Ong, N. R.; Sauli, Z.; Mahmed, N.; Kirtsaeng, S.; Sakuntasathien, S.; Suppiah, S.; Alcain, J. B.; Retnasamy, V.

2017-09-01

High power LED began to gain popularity in the semiconductor market due to its efficiency and luminance. Nonetheless, along with the increased in efficiency, there was an increased in the junction temperature too. The alleviating junction temperature is undesirable since the performances and lifetime will be degraded over time. Therefore, it is crucial to solve this thermal problem by maximizing the heat dissipation to the ambience. Improvising the die attach (DA) layer would be the best option because this layer is sandwiched between the chip (heat source) and the substrate (channel to the ambient). In this paper, the impact of thickness and thermal conductivity onto the junction temperature and Von Mises stress is analyzed. Results obtained showed that the junction temperature is directly proportional to the thickness but the stress was inversely proportional to the thickness of the DA. The thermal conductivity of the materials did affect the junction temperature as there was not much changes once the thermal conductivity reached 20W/mK. However, no significant changes were observed on the Von Mises stress caused by the thermal conductivity. Material with the second highest thermal conductivity had the lowest stress, whereas the highest conductivity material had the highest stress value at 20 µm. Overall, silver sinter provided the best thermal dissipation compared to the other materials.

Analytical theory of the space-charge region of lateral p-n junctions in nanofilms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gurugubelli, Vijaya Kumar, E-mail: vkgurugubelli@gmail.com; Karmalkar, Shreepad

There is growing interest in fabricating conventional semiconductor devices in a nanofilm which could be a 3D material with one reduced dimension (e.g., silicon-on-insulator (SOI) film), or single/multiple layers of a 2D material (e.g., MoS{sub 2}), or a two dimensional electron gas/two dimensional hole gas (2DEG/2DHG) layer. Lateral p-n junctions are essential parts of these devices. The space-charge region electrostatics in these nanofilm junctions is strongly affected by the surrounding field, unlike in bulk junctions. Current device physics of nanofilms lacks a simple analytical theory of this 2D electrostatics of lateral p-n junctions. We present such a theory taking intomore » account the film's thickness, permittivity, doping, interface charge, and possibly different ambient permittivities on film's either side. In analogy to the textbook theory of the 1D electrostatics of bulk p-n junctions, our theory yields simple formulas for the depletion width, the extent of space-charge tails beyond this width, and the screening length associated with the space-charge layer in nanofilm junctions; these formulas agree with numerical simulations and measurements. Our theory introduces an electrostatic thickness index to classify nanofilms into sheets, bulk and intermediate sized.« less

Electron transport and noise spectroscopy in organic magnetic tunnel junctions with PTCDA and Alq3 barriers

NASA Astrophysics Data System (ADS)

Martinez, Isidoro; Cascales, Juan Pedro; Hong, Jhen-Yong; Lin, Minn-Tsong; Prezioso, Mirko; Riminucci, Alberto; Dediu, Valentin A.; Aliev, Farkhad G.

2016-10-01

The possible influence of internal barrier dynamics on spin, charge transport and their fluctuations in organic spintronics remains poorly understood. Here we present investigation of the electron transport and low frequency noise at temperatures down to 0.3K in magnetic tunnel junctions with an organic PTCDA barriers with thickness up to 5 nm in the tunneling regime and with 200 nm thick Alq3 barrier in the hopping regime. We observed high tunneling magneto-resistance at low temperatures (15-40%) and spin dependent super-poissonian shot noise in organic magnetic tunnel junctions (OMTJs) with PTCDA. The Fano factor exceeds 1.5-2 values which could be caused by interfacial states controlled by spin dependent bunching in the tunneling events through the molecules.1 The bias dependence of the low frequency noise in OMTJs with PTCDA barriers which includes both 1/f and random telegraph noise activated at specific biases will also be discussed. On the other hand, the organic junctions with ferromagnetic electrodes and thick Alq3 barriers present sub-poissonian shot noise which depends on the temperature, indicative of variable range hopping.

Mechanisms of Current Flow in the Diode Structure with an n + - p-Junction Formed by Thermal Diffusion of Phosphorus From Porous Silicon Film

NASA Astrophysics Data System (ADS)

Tregulov, V. V.; Litvinov, V. G.; Ermachikhin, A. V.

2018-01-01

Temperature dependences of current-voltage characteristics of the photoelectric converter with an antireflective film of porous silicon and an n + -p-junction formed by thermal diffusion of phosphorus from a porous film is studied. The porous silicon film was saturated with phosphorus during its growing by electrochemical method. It is shown that the current flow processes in the structure under study are significantly influenced by traps.

Critical current oscillations of elliptical Josephson junctions with single-domain ferromagnetic layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glick, Joseph A.; Khasawneh, Mazin A.; Niedzielski, Bethany M.

We report that josephson junctions containing ferromagnetic layers are of considerable interest for the development of practical cryogenic memory and superconducting qubits. Such junctions exhibit a ground-state phase shift of π for certain ranges of ferromagnetic layer thicknesses. We present studies of Nb based micron-scale elliptically shaped Josephson junctions containing ferromagnetic barriers of Ni 81Fe 19 or Ni 65Fe 15Co 20. By applying an external magnetic field, the critical current of the junctions is found to follow characteristic Fraunhofer patterns and display sharp switching behavior suggestive of single-domain magnets. The high quality of the Fraunhofer patterns enables us to extractmore » the maximum value of the critical current even when the peak is shifted significantly outside the range of the data due to the magnetic moment of the ferromagnetic layer. The maximum value of the critical current oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and π. Lastly, we compare the data to previous work and to models of the 0-π transitions based on existing theories.« less

Critical current oscillations of elliptical Josephson junctions with single-domain ferromagnetic layers

DOE PAGES

Glick, Joseph A.; Khasawneh, Mazin A.; Niedzielski, Bethany M.; ...

2017-10-06

We report that josephson junctions containing ferromagnetic layers are of considerable interest for the development of practical cryogenic memory and superconducting qubits. Such junctions exhibit a ground-state phase shift of π for certain ranges of ferromagnetic layer thicknesses. We present studies of Nb based micron-scale elliptically shaped Josephson junctions containing ferromagnetic barriers of Ni 81Fe 19 or Ni 65Fe 15Co 20. By applying an external magnetic field, the critical current of the junctions is found to follow characteristic Fraunhofer patterns and display sharp switching behavior suggestive of single-domain magnets. The high quality of the Fraunhofer patterns enables us to extractmore » the maximum value of the critical current even when the peak is shifted significantly outside the range of the data due to the magnetic moment of the ferromagnetic layer. The maximum value of the critical current oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and π. Lastly, we compare the data to previous work and to models of the 0-π transitions based on existing theories.« less

Geometrical dependence of spin current absorption into a ferromagnetic nanodot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nomura, Tatsuya; Ohnishi, Kohei; Kimura, Takashi, E-mail: t-kimu@phys.kyushu-u.ac.jp

We have investigated the absorption property of the diffusive pure spin current due to a ferromagnetic nanodot in a laterally configured ferromagnetic/nonmagnetic hybrid nanostructure. The spin absorption in a nano-pillar-based lateral-spin-valve structure was confirmed to increase with increasing the lateral dimension of the ferromagnetic dot. However, the absorption efficiency was smaller than that in a conventional lateral spin valve based on nanowire junctions because the large effective cross section of the two dimensional nonmagnetic film reduces the spin absorption selectivity. We also found that the absorption efficiency of the spin current is significantly enhanced by using a thick ferromagnetic nanodot.more » This can be understood by taking into account the spin absorption through the side surface of the ferromagnetic dot quantitatively.« less

Performance of a junction termination extension avalanche photodiode for use with scintillators

NASA Astrophysics Data System (ADS)

Gramsch, E.; Pcheliakov, O.; Chistokhin, Igor B.

2008-11-01

An avalanche photodiode with a ring structure called junction termination extension (JTE) was built and tested. It has three diffused rings around the main junction to avoid early breakdown at the surface. The ITE rings have less doping than the main junction and can be built by well controlled single ion-implantation through a single mask. Avalanche photodiodes with two mm diameter active area have been have been built by implantation of boron with a dose of 2, 3, 4 and 5 × 1012 cm-2, followed by deep diffusion of the junction up to 14 μm. The dark current is strongly dependent on the implantation dose, decreasing with decreasing charge. For the APDs with implanted dose of 5 × 1012 cm-2 a gain of 8 is obtained at 1120 V. The energy resolution from a 137Cs source was measured to be 24.4% FWHM with a 2 × 2 × 2 mm3 BGO scintillator. We have also performed simulations of the gain and breakdown voltage that correlate well with the results.

Silicon MINP solar cells

NASA Technical Reports Server (NTRS)

Olsen, L. C.; Addis, F. W.; Miller, W. A.

1985-01-01

The MINP solar cell concept refers to a cell structure designed to be a base region dominated device. Thus, it is desirable that recombination losses are reduced to the point that they occur only in the base region. The most unique feature of the MINP cell design is that a tunneling contact is utilized for the metallic contact on the front surface. The areas under the collector grid and bus bar are passivated by a thin oxide of tunneling thickness. Efforts must also be taken to minimize recombination at the surface between grid lines, at the junction periphery and within the emitter. Results of both theoretical and experimental studies of silicon MINP cells are given. Performance calculations are described which give expected efficiencies as a function of base resistivity and junction depth. Fabrication and characterization of cells are discussed which are based on 0.2 ohm-cm substrates, diffused emitters on the order of 0.15 to 0.20 microns deep, and with Mg MIS collector grids. A total area AM 1 efficiency of 16.8% was achieved. Detailed analyses of photocurrent and current loss mechanisms are presented and utilized to discuss future directions of research. Finally, results reported by other workers are discussed.

Measurement of Single Channel Currents from Cardiac Gap Junctions

NASA Astrophysics Data System (ADS)

Veenstra, Richard D.; Dehaan, Robert L.

1986-08-01

Cardiac gap junctions consist of arrays of integral membrane proteins joined across the intercellular cleft at points of cell-to-cell contact. These junctional proteins are thought to form pores through which ions can diffuse from cytosol to cytosol. By monitoring whole-cell currents in pairs of embryonic heart cells with two independent patch-clamp circuits, the properties of single gap junction channels have been investigated. These channels had a conductance of about 165 picosiemens and underwent spontaneous openings and closings that were independent of voltage. Channel activity and macroscopic junctional conductance were both decreased by the uncoupling agent 1-octanol.

Thickness dependent charge transport in ferroelectric BaTiO3 heterojunctions

NASA Astrophysics Data System (ADS)

Singh, Pooja; Rout, P. K.; Singh, Manju; Rakshit, R. K.; Dogra, Anjana

2015-09-01

We have investigated the effect of ferroelectric barium titanate (BaTiO3) film thickness on the charge transport mechanism in pulsed laser deposited epitaxial metal-ferroelectric semiconductor junctions. The current (I)-voltage (V) measurements across the junctions comprising of 20-500 nm thick BaTiO3 and conducting bottom electrode (Nb: SrTiO3 substrate or La2/3Ca1/3MnO3 buffer layer) demonstrate the space charge limited conduction. Further analysis indicates a reduction in the ratio of free to trapped carriers with increasing thickness in spite of decreasing trap density. Such behaviour arises the deepening of the shallow trap levels (<0.65 eV) below conduction band with increasing thickness. Moreover, the observed hysteresis in I-V curves implies a bipolar resistive switching behaviour, which can be explained in terms of charge trapping and de-trapping process.

Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

NASA Astrophysics Data System (ADS)

Muthusubramanian, N.; Galan, E.; Maity, C.; Eelkema, R.; Grozema, F. C.; van der Zant, H. S. J.

2016-07-01

We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al2O3 thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10-4 G0 (1 G0 = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were used to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.

The effect of a nonmagnetic cap layer on the spin-polarized tunneling and magnetoresistance in double-barrier planar junctions

NASA Astrophysics Data System (ADS)

Xie, Zheng-Wei; Li, Bo-Zang; Li, Yu-Xian

2003-10-01

Within the framework of the free-electron model, the tunneling magnetoresistance (TMR) and tunneling conductance (TC) in double magnetic tunnel junctions (DMTJ) with nonmagnetic cap layer, i.e. the NM/FM/I/NM/(FM)/I/FM/NM junction is investigated. FM, NM and I represent the ferromagnetic metal, nonmagnetic metal and insulator, respectively, NM(FM) indicates that the middle layer can be NM or FM. Our results show that, due to the spin-dependent interfacial potential barriers, the influences of the thickness of the FM layer on TC and TMR in DMTJ are large, and when the thicknesses of these two FM layers are suitable a large TMR can be obtained. (

Multilayer-Grown Ultrathin Nanostructured GaAs Solar Cells as a Cost-Competitive Materials Platform for III-V Photovoltaics.

PubMed

Gai, Boju; Sun, Yukun; Lim, Haneol; Chen, Huandong; Faucher, Joseph; Lee, Minjoo L; Yoon, Jongseung

2017-01-24

Large-scale deployment of GaAs solar cells in terrestrial photovoltaics demands significant cost reduction for preparing device-quality epitaxial materials. Although multilayer epitaxial growth in conjunction with printing-based materials assemblies has been proposed as a promising route to achieve this goal, their practical implementation remains challenging owing to the degradation of materials properties and resulting nonuniform device performance between solar cells grown in different sequences. Here we report an alternative approach to circumvent these limitations and enable multilayer-grown GaAs solar cells with uniform photovoltaic performance. Ultrathin single-junction GaAs solar cells having a 300-nm-thick absorber (i.e., emitter and base) are epitaxially grown in triple-stack releasable multilayer assemblies by molecular beam epitaxy using beryllium as a p-type impurity. Microscale (∼500 × 500 μm 2 ) GaAs solar cells fabricated from respective device layers exhibit excellent uniformity (<3% relative) of photovoltaic performance and contact properties owing to the suppressed diffusion of p-type dopant as well as substantially reduced time of epitaxial growth associated with ultrathin device configuration. Bifacial photon management employing hexagonally periodic TiO 2 nanoposts and a vertical p-type metal contact serving as a metallic back-surface reflector together with specialized epitaxial design to minimize parasitic optical losses for efficient light trapping synergistically enable significantly enhanced photovoltaic performance of such ultrathin absorbers, where ∼17.2% solar-to-electric power conversion efficiency under simulated AM1.5G illumination is demonstrated from 420-nm-thick single-junction GaAs solar cells grown in triple-stack epitaxial assemblies.

2D matrix engineering for homogeneous quantum dot coupling in photovoltaic solids.

PubMed

Xu, Jixian; Voznyy, Oleksandr; Liu, Mengxia; Kirmani, Ahmad R; Walters, Grant; Munir, Rahim; Abdelsamie, Maged; Proppe, Andrew H; Sarkar, Amrita; García de Arquer, F Pelayo; Wei, Mingyang; Sun, Bin; Liu, Min; Ouellette, Olivier; Quintero-Bermudez, Rafael; Li, Jie; Fan, James; Quan, Lina; Todorovic, Petar; Tan, Hairen; Hoogland, Sjoerd; Kelley, Shana O; Stefik, Morgan; Amassian, Aram; Sargent, Edward H

2018-06-01

Colloidal quantum dots (CQDs) are promising photovoltaic (PV) materials because of their widely tunable absorption spectrum controlled by nanocrystal size 1,2 . Their bandgap tunability allows not only the optimization of single-junction cells, but also the fabrication of multijunction cells that complement perovskites and silicon 3 . Advances in surface passivation 2,4-7 , combined with advances in device structures 8 , have contributed to certified power conversion efficiencies (PCEs) that rose to 11% in 2016 9 . Further gains in performance are available if the thickness of the devices can be increased to maximize the light harvesting at a high fill factor (FF). However, at present the active layer thickness is limited to ~300 nm by the concomitant photocarrier diffusion length. To date, CQD devices thicker than this typically exhibit decreases in short-circuit current (J SC ) and open-circuit voltage (V OC ), as seen in previous reports 3,9-11 . Here, we report a matrix engineering strategy for CQD solids that significantly enhances the photocarrier diffusion length. We find that a hybrid inorganic-amine coordinating complex enables us to generate a high-quality two-dimensionally (2D) confined inorganic matrix that programmes internanoparticle spacing at the atomic scale. This strategy enables the reduction of structural and energetic disorder in the solid and concurrent improvements in the CQD packing density and uniformity. Consequently, planar devices with a nearly doubled active layer thicknesses (~600 nm) and record values of J SC (32 mA cm -2 ) are fabricated. The V OC improved as the current was increased. We demonstrate CQD solar cells with a certified record efficiency of 12%.

Bortezomib With or Without Irinotecan in Treating Patients With Cancer of the Gastroesophageal Junction or Stomach

ClinicalTrials.gov

2015-05-15

Adenocarcinoma of the Gastroesophageal Junction; Diffuse Adenocarcinoma of the Stomach; Intestinal Adenocarcinoma of the Stomach; Mixed Adenocarcinoma of the Stomach; Recurrent Gastric Cancer; Stage IIIB Gastric Cancer; Stage IIIC Gastric Cancer; Stage IV Gastric Cancer

Characterization, scaling, and partial representation of diffuse and discrete input junctions to CA3 hippocampus.

PubMed

Ascarrunz, F G; Kisley, M A; Flach, K A; Hamilton, R W; MacGregor, R J

1995-07-01

This paper applies a general mathematical system for characterizing and scaling functional connectivity and information flow across the diffuse (EC) and discrete (DG) input junctions to the CA3 hippocampus. Both gross connectivity and coordinated multiunit informational firing patterns are quantitatively characterized in terms of 32 defining parameters interrelated by 17 equations, and then scaled down according to rules for uniformly proportional scaling and for partial representation. The diffuse EC-CA3 junction is shown to be uniformly scalable with realistic representation of both essential spatiotemporal cooperativity and coordinated firing patterns down to populations of a few hundred neurons. Scaling of the discrete DG-CA3 junction can be effected with a two-step process, which necessarily deviates from uniform proportionality but nonetheless produces a valuable and readily interpretable reduced model, also utilizing a few hundred neurons in the receiving population. Partial representation produces a reduced model of only a portion of the full network where each model neuron corresponds directly to a biological neuron. The mathematical analysis illustrated here shows that although omissions and distortions are inescapable in such an application, satisfactorily complete and accurate models the size of pattern modules are possible. Finally, the mathematical characterization of these junctions generates a theory which sees the DG as a definer of the fine structure of embedded traces in the hippocampus and entire coordinated patterns of sequences of 14-cell links in CA3 as triggered by the firing of sequences of individual neurons in DG.

Disequilibrium dihedral angles in dolerite sills

USGS Publications Warehouse

Holness, Marian B.; Richardson, Chris; Helz, Rosalind T.

2012-01-01

The geometry of clinopyroxene-plagioclase-plagioclase junctions in mafic rocks, measured by the median dihedral angle Θcpp, is created during solidification. In the solidifying Kilauea Iki (Hawaii) lava lake, the wider junctions between plagioclase grains are the first to be filled by pyroxene, followed by the narrower junctions. The final Θcpp, attained when all clinopyroxene-plagioclase-plagioclase junctions are formed, is 78° in the upper crust of the lake, and 85° in the lower solidification front. Θcpp in the 3.5-m-thick Traigh Bhàn na Sgùrra sill (Inner Hebrides) is everywhere 78°. In the Whin Sill (northern England, 38 m thick) and the Portal Peak sill (Antarctica, 129 m thick), Θcpp varies symmetrically, with the lowest values at the margins. The 266-m-thick Basement Sill (Antarctica) has asymmetric variation of Θcpp, attributed to a complex filling history. The chilled margins of the Basement Sill are partially texturally equilibrated, with high Θcpp. The plagioclase grain size in the two widest sills varies asymmetrically, with the coarsest rocks found in the upper third. Both Θcpp and average grain size are functions of model crystallization times. Θcpp increases from 78° to a maximum of ∼100° as the crystallization time increases from 1 to 500 yr. Because the use of grain size as a measure of crystallization time is dependent on an estimate of crystal growth rates, dihedral angles provide a more direct proxy for cooling rates in dolerites.

Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag2Se Topological Insulator Nanowire.

PubMed

Kim, Jihwan; Kim, Bum-Kyu; Kim, Hong-Seok; Hwang, Ahreum; Kim, Bongsoo; Doh, Yong-Joo

2017-11-08

We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag 2 Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the critical current decreases monotonously with increasing magnetic field. The stochastic distribution of the switching current exhibits the macroscopic quantum tunneling behavior, which is robust up to T = 0.8 K. Our observations indicate that the TI nanowire-based Josephson junctions can be a promising building block for the development of nanohybrid superconducting quantum bits.

Measuring Thermal Diffusivity Of A High-Tc Superconductor

NASA Technical Reports Server (NTRS)

Powers, Charles E.; Oh, Gloria; Leidecker, Henning

1992-01-01

Technique for measuring thermal diffusivity of superconductor of high critical temperature based on Angstrom's temperature-wave method. Peltier junction generates temperature oscillations, which propagate with attenuation up specimen. Thermal diffusivity of specimen calculated from distance between thermocouples and amplitudes and phases of oscillatory components of thermocouple readings.

Imaging Ca2+ nanosparks in heart with a new targeted biosensor.

PubMed

Shang, Wei; Lu, Fujian; Sun, Tao; Xu, Jiejia; Li, Lin-Lin; Wang, Yanru; Wang, Gang; Chen, Liangyi; Wang, Xianhua; Cannell, Mark B; Wang, Shi-Qiang; Cheng, Heping

2014-01-31

In cardiac dyads, junctional Ca2+ directly controls the gating of the ryanodine receptors (RyRs), and is itself dominated by RyR-mediated Ca2+ release from the sarcoplasmic reticulum. Existing probes do not report such local Ca2+ signals because of probe diffusion, so a junction-targeted Ca2+ sensor should reveal new information on cardiac excitation-contraction coupling and its modification in disease states. To investigate Ca2+ signaling in the nanoscopic space of cardiac dyads by targeting a new sensitive Ca2+ biosensor (GCaMP6f) to the junctional space. By fusing GCaMP6f to the N terminus of triadin 1 or junctin, GCaMP6f-triadin 1/junctin was targeted to dyadic junctions, where it colocalized with t-tubules and RyRs after adenovirus-mediated gene transfer. This membrane protein-tagged biosensor displayed ≈4× faster kinetics than native GCaMP6f. Confocal imaging revealed junctional Ca2+ transients (Ca2+ nanosparks) that were ≈50× smaller in volume than conventional Ca2+ sparks (measured with diffusible indicators). The presence of the biosensor did not disrupt normal Ca2+ signaling. Because no indicator diffusion occurred, the amplitude and timing of release measurements were improved, despite the small recording volume. We could also visualize coactivation of subclusters of RyRs within a single junctional region, as well as quarky Ca2+ release events. This new, targeted biosensor allows selective visualization and measurement of nanodomain Ca2+ dynamics in intact cells and can be used to give mechanistic insights into dyad RyR operation in health and in disease states such as when RyRs become orphaned.

Fabrication of p(+)-n junction GaAs solar cells by a novel method

NASA Technical Reports Server (NTRS)

Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

1984-01-01

A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

Graphene oxide as a p-dopant and an anti-reflection coating layer, in graphene/silicon solar cells

NASA Astrophysics Data System (ADS)

Yavuz, S.; Kuru, C.; Choi, D.; Kargar, A.; Jin, S.; Bandaru, P. R.

2016-03-01

It is shown that coating graphene-silicon (Gr/Si) Schottky junction based solar cells with graphene oxide (GO) improves the power conversion efficiency (PCE) of the cells, while demonstrating unprecedented device stability. The PCE has been shown to be increased to 10.6% (at incident radiation of 100 mW cm-2) for the Gr/Si solar cell with an optimal GO coating thickness compared to 3.6% for a bare/uncoated Gr/Si solar cell. The p-doping of graphene by the GO, which also serves as an antireflection coating (ARC) has been shown to be a main contributing factor to the enhanced PCE. A simple spin coating process has been used to apply GO with thickness commensurate with an anti-refection coating (ARC) and indicates the suitability of the developed methodology for large-scale solar cell assembly.It is shown that coating graphene-silicon (Gr/Si) Schottky junction based solar cells with graphene oxide (GO) improves the power conversion efficiency (PCE) of the cells, while demonstrating unprecedented device stability. The PCE has been shown to be increased to 10.6% (at incident radiation of 100 mW cm-2) for the Gr/Si solar cell with an optimal GO coating thickness compared to 3.6% for a bare/uncoated Gr/Si solar cell. The p-doping of graphene by the GO, which also serves as an antireflection coating (ARC) has been shown to be a main contributing factor to the enhanced PCE. A simple spin coating process has been used to apply GO with thickness commensurate with an anti-refection coating (ARC) and indicates the suitability of the developed methodology for large-scale solar cell assembly. Electronic supplementary information (ESI) available: (i) Experimental methods, (ii) optical images of devices with and without graphene oxide (GO), (iii) comparison of the power conversion efficiency (PCE) due to the GO coating and nitric acid doping, (iv) specular and diffuse reflectance measurements, (v) stability data of pristine graphene/silicon (Gr/Si) solar cells. See DOI: 10.1039/c5nr09143h

Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

NASA Astrophysics Data System (ADS)

Matsumura, Ryo; Katoh, Takumi; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Tunneling field-effect transistors (TFETs) attract much attention for use in realizing next-generation low-power processors. In particular, Ge-on-insulator (GOI) TFETs are expected to realize low power operation with a high on-current/off-current (I on/I off) ratio, owing to their narrow bandgap. Here, to improve the performance of GOI-TFETs, a source junction with a high doping concentration and an abrupt impurity profile is essential. In this study, a snowplow effect of NiGe combined with low-energy BF2 + implantation has been investigated to realize an abrupt p+/n Ge junction for GOI n-channel TFETs. By optimizing the Ni thickness to form NiGe (thickness: 4 nm), an abrupt junction with a B profile abruptness of ˜5 nm/dec has been realized with a high doping concentration of around 1021 cm-3. The operation of GOI n-TFETs with this source junction having the abrupt B profile has been demonstrated, and the improvement of TFET properties such as the I on/I off ratio from 311 to 743 and the subthreshold slope from 368 to 239 mV/dec has been observed. This junction formation technology is attractive for enhancing the TFET performance.

Enhanced resolution imaging of ultrathin ZnO layers on Ag(111) by multiple hydrogen molecules in a scanning tunneling microscope junction

NASA Astrophysics Data System (ADS)

Liu, Shuyi; Shiotari, Akitoshi; Baugh, Delroy; Wolf, Martin; Kumagai, Takashi

2018-05-01

Molecular hydrogen in a scanning tunneling microscope (STM) junction has been found to enhance the lateral spatial resolution of the STM imaging, referred to as scanning tunneling hydrogen microscopy (STHM). Here we report atomic resolution imaging of 2- and 3-monolayer (ML) thick ZnO layers epitaxially grown on Ag(111) using STHM. The enhanced resolution can be obtained at a relatively large tip to surface distance and resolves a more defective structure exhibiting dislocation defects for 3-ML-thick ZnO than for 2 ML. In order to elucidate the enhanced imaging mechanism, the electric and mechanical properties of the hydrogen molecular junction (HMJ) are investigated by a combination of STM and atomic force microscopy. It is found that the HMJ shows multiple kinklike features in the tip to surface distance dependence of the conductance and frequency shift curves, which are absent in a hydrogen-free junction. Based on a simple modeling, we propose that the junction contains several hydrogen molecules and sequential squeezing of the molecules out of the junction results in the kinklike features in the conductance and frequency shift curves. The model also qualitatively reproduces the enhanced resolution image of the ZnO films.

Photocatalytic generation of hydrogen by core-shell WO3/BiVO4 nanorods with ultimate water splitting efficiency

PubMed Central

Pihosh, Yuriy; Turkevych, Ivan; Mawatari, Kazuma; Uemura, Jin; Kazoe, Yutaka; Kosar, Sonya; Makita, Kikuo; Sugaya, Takeyoshi; Matsui, Takuya; Fujita, Daisuke; Tosa, Masahiro; Kondo, Michio; Kitamori, Takehiko

2015-01-01

Efficient photocatalytic water splitting requires effective generation, separation and transfer of photo-induced charge carriers that can hardly be achieved simultaneously in a single material. Here we show that the effectiveness of each process can be separately maximized in a nanostructured heterojunction with extremely thin absorber layer. We demonstrate this concept on WO3/BiVO4+CoPi core-shell nanostructured photoanode that achieves near theoretical water splitting efficiency. BiVO4 is characterized by a high recombination rate of photogenerated carriers that have much shorter diffusion length than the thickness required for sufficient light absorption. This issue can be resolved by the combination of BiVO4 with more conductive WO3 nanorods in a form of core-shell heterojunction, where the BiVO4 absorber layer is thinner than the carrier diffusion length while it’s optical thickness is reestablished by light trapping in high aspect ratio nanostructures. Our photoanode demonstrates ultimate water splitting photocurrent of 6.72 mA cm−2 under 1 sun illumination at 1.23 VRHE that corresponds to ~90% of the theoretically possible value for BiVO4. We also demonstrate a self-biased operation of the photoanode in tandem with a double-junction GaAs/InGaAsP photovoltaic cell with stable water splitting photocurrent of 6.56 mA cm−2 that corresponds to the solar to hydrogen generation efficiency of 8.1%. PMID:26053164

Photocatalytic generation of hydrogen by core-shell WO3/BiVO4 nanorods with ultimate water splitting efficiency

NASA Astrophysics Data System (ADS)

Pihosh, Yuriy; Turkevych, Ivan; Mawatari, Kazuma; Uemura, Jin; Kazoe, Yutaka; Kosar, Sonya; Makita, Kikuo; Sugaya, Takeyoshi; Matsui, Takuya; Fujita, Daisuke; Tosa, Masahiro; Kondo, Michio; Kitamori, Takehiko

2015-06-01

Efficient photocatalytic water splitting requires effective generation, separation and transfer of photo-induced charge carriers that can hardly be achieved simultaneously in a single material. Here we show that the effectiveness of each process can be separately maximized in a nanostructured heterojunction with extremely thin absorber layer. We demonstrate this concept on WO3/BiVO4+CoPi core-shell nanostructured photoanode that achieves near theoretical water splitting efficiency. BiVO4 is characterized by a high recombination rate of photogenerated carriers that have much shorter diffusion length than the thickness required for sufficient light absorption. This issue can be resolved by the combination of BiVO4 with more conductive WO3 nanorods in a form of core-shell heterojunction, where the BiVO4 absorber layer is thinner than the carrier diffusion length while it’s optical thickness is reestablished by light trapping in high aspect ratio nanostructures. Our photoanode demonstrates ultimate water splitting photocurrent of 6.72 mA cm-2 under 1 sun illumination at 1.23 VRHE that corresponds to ~90% of the theoretically possible value for BiVO4. We also demonstrate a self-biased operation of the photoanode in tandem with a double-junction GaAs/InGaAsP photovoltaic cell with stable water splitting photocurrent of 6.56 mA cm-2 that corresponds to the solar to hydrogen generation efficiency of 8.1%.

Irinotecan, Cisplatin, and Bevacizumab in Treating Patients With Unresectable or Metastatic Gastric or Gastroesophageal Junction Adenocarcinoma

ClinicalTrials.gov

2013-06-03

Adenocarcinoma of the Gastroesophageal Junction; Diffuse Adenocarcinoma of the Stomach; Intestinal Adenocarcinoma of the Stomach; Mixed Adenocarcinoma of the Stomach; Recurrent Gastric Cancer; Stage IIIA Gastric Cancer; Stage IIIB Gastric Cancer; Stage IIIC Gastric Cancer; Stage IV Gastric Cancer

Anomalous current in diffusive ferromagnetic Josephson junctions

NASA Astrophysics Data System (ADS)

Silaev, M. A.; Tokatly, I. V.; Bergeret, F. S.

2017-05-01

We demonstrate that in diffusive superconductor/ferromagnet/superconductor (S/F/S) junctions a finite, anomalous Josephson current can flow even at zero phase difference between the S electrodes. The conditions for the observation of this effect are noncoplanar magnetization distribution and a broken magnetization inversion symmetry of the superconducting current. The latter symmetry is intrinsic for the widely used quasiclassical approximation and prevented previous works based on this approximation from obtaining the Josephson anomalous current. We show that this symmetry can be removed by introducing spin-dependent boundary conditions for the quasiclassical equations at the superconducting/ferromagnet interfaces in diffusive systems. Using this recipe, we consider generic multilayer magnetic systems and determine the ideal experimental conditions in order to maximize the anomalous current.

High Aspect Ratio Semiconductor Heterojunction Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Redwing, Joan; Mallouk, Tom; Mayer, Theresa

2013-05-17

The project focused on the development of high aspect ratio silicon heterojunction (HARSH) solar cells. The solar cells developed in this study consisted of high density vertical arrays of radial junction silicon microwires/pillars formed on Si substrates. Prior studies have demonstrated that vertical Si wire/pillar arrays enable reduced reflectivity and improved light trapping characteristics compared to planar solar cells. In addition, the radial junction structure offers the possibility of increased carrier collection in solar cells fabricated using material with short carrier diffusion lengths. However, the high junction and surface area of radial junction Si wire/pillar array devices can be problematicmore » and lead to increased diode leakage and enhanced surface recombination. This study investigated the use of amorphous hydrogenated Si in the form of a heterojunction-intrinsic-thin layer (HIT) structure as a junction formation method for these devices. The HIT layer structure has widely been employed to reduce surface recombination in planar crystalline Si solar cells. Consequently, it was anticipated that it would also provide significant benefits to the performance of radial junction Si wire/pillar array devices. The overall goals of the project were to demonstrate a HARSH cell with a HIT-type structure in the radial junction Si wire/pillar array configuration and to develop potentially low cost pathways to fabricate these devices. Our studies demonstrated that the HIT structure lead to significant improvements in the open circuit voltage (V oc>0.5) of radial junction Si pillar array devices compared to devices fabricated using junctions formed by thermal diffusion or low pressure chemical vapor deposition (LPCVD). In addition, our work experimentally demonstrated that the radial junction structure lead to improvements in efficiency compared to comparable planar devices for devices fabricated using heavily doped Si that had reduced carrier diffusion lengths. Furthermore, we made significant advances in employing the bottom-up vapor-liquid-solid (VLS) growth technique for the fabrication of the Si wire arrays. Our work elucidated the effects of growth conditions and substrate pattern geometry on the growth of large area Si microwire arrays grown with SiCl4. In addition, we also developed a process to grow p-type Si nanowire arrays using aluminum as the catalyst metal instead of gold. Finally, our work demonstrated the feasibility of growing vertical arrays of Si wires on non-crystalline glass substrates using polycrystalline Si template layers. The accomplishments demonstrated in this project will pave the way for future advances in radial junction wire array solar cells.« less

MoS2 Heterojunctions by Thickness Modulation

PubMed Central

Tosun, Mahmut; Fu, Deyi; Desai, Sujay B.; Ko, Changhyun; Seuk Kang, Jeong; Lien, Der-Hsien; Najmzadeh, Mohammad; Tongay, Sefaattin; Wu, Junqiao; Javey, Ali

2015-01-01

In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. The work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS2 junctions with important implications for exploring novel optoelectronic devices. PMID:26121940

MoS 2 Heterojunctions by Thickness Modulation

DOE PAGES

Tosun, Mahmut; Fu, Deyi; Desai, Sujay B.; ...

2015-06-30

In this work, we report lateral heterojunction formation in as-exfoliated MoS 2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. Finally, the work presents experimental and theoretical understanding of the band alignmentmore » and photoresponse of thickness modulated MoS 2 junctions with important implications for exploring novel optoelectronic devices.« less

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

PubMed Central

Xi, Zhongnan; Ruan, Jieji; Li, Chen; Zheng, Chunyan; Wen, Zheng; Dai, Jiyan; Li, Aidong; Wu, Di

2017-01-01

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier on Nb:SrTiO3 surface via varying BaTiO3 thickness and Nb doping concentration. The optimum ON/OFF ratio as great as 6.0 × 106, comparable to that of commercial Flash memories, is achieved in a device with 0.1 wt% Nb concentration and a 4-unit-cell-thick BaTiO3 barrier. With this thinnest BaTiO3 barrier, which shows a negligible resistance to the tunnelling current but is still ferroelectric, the device is reduced to a polarization-modulated metal/semiconductor Schottky junction that exhibits a more efficient control on the tunnelling resistance to produce the giant electroresistance observed. These results may facilitate the design of high performance non-volatile resistive memories. PMID:28513590

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

NASA Astrophysics Data System (ADS)

Xi, Zhongnan; Ruan, Jieji; Li, Chen; Zheng, Chunyan; Wen, Zheng; Dai, Jiyan; Li, Aidong; Wu, Di

2017-05-01

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier on Nb:SrTiO3 surface via varying BaTiO3 thickness and Nb doping concentration. The optimum ON/OFF ratio as great as 6.0 × 106, comparable to that of commercial Flash memories, is achieved in a device with 0.1 wt% Nb concentration and a 4-unit-cell-thick BaTiO3 barrier. With this thinnest BaTiO3 barrier, which shows a negligible resistance to the tunnelling current but is still ferroelectric, the device is reduced to a polarization-modulated metal/semiconductor Schottky junction that exhibits a more efficient control on the tunnelling resistance to produce the giant electroresistance observed. These results may facilitate the design of high performance non-volatile resistive memories.

A Theoretical Model of Jigsaw-Puzzle Pattern Formation by Plant Leaf Epidermal Cells.

PubMed

Higaki, Takumi; Kutsuna, Natsumaro; Akita, Kae; Takigawa-Imamura, Hisako; Yoshimura, Kenji; Miura, Takashi

2016-04-01

Plant leaf epidermal cells exhibit a jigsaw puzzle-like pattern that is generated by interdigitation of the cell wall during leaf development. The contribution of two ROP GTPases, ROP2 and ROP6, to the cytoskeletal dynamics that regulate epidermal cell wall interdigitation has already been examined; however, how interactions between these molecules result in pattern formation remains to be elucidated. Here, we propose a simple interface equation model that incorporates both the cell wall remodeling activity of ROP GTPases and the diffusible signaling molecules by which they are regulated. This model successfully reproduces pattern formation observed in vivo, and explains the counterintuitive experimental results of decreased cellulose production and increased thickness. Our model also reproduces the dynamics of three-way cell wall junctions. Therefore, this model provides a possible mechanism for cell wall interdigitation formation in vivo.

High mobility and high concentration Type-III heterojunction FET

NASA Astrophysics Data System (ADS)

Tsu, R.; Fiddy, M. A.; Her, T.

2018-02-01

The PN junction was introduced in transistors by doping, resulting in high losses due to Coulomb scattering from the dopants. The MOSFET introduced carriers in the form of electrons and holes with an applied bias to the oxide barrier, resulting in carrier transfer without doping. This avoids high scattering losses and dominates the IC industries. With heterojunctions having valence-band maxima near and even above the conduction-band minimum in the formation of Type-III superlattices, very useful devices, introduced by Tsu, Sai-Halacz, and Esaki, soon followed. If the layer thicknesses are more than the carrier mean-free-path, incoherent scattering results in the formation of carrier transfer via diffusion instead of opening up new energy gaps. The exploitation of carriers without scattering represents a new and significant opportunity in what we call a Broken Gap Heterojunction FET.

Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

1981-01-01

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

Properties of cutoff corrugated surfaces for corrugated horn design. [corrugation shape and density effects on scattering

NASA Technical Reports Server (NTRS)

Mentzer, C. A.; Peters, L., Jr.

1974-01-01

Corrugated horns involve a junction between the corrugated surface and a conducting ground plane. Proper horn design requires an understanding of the electromagnetic properties of the corrugated surface and this junction. An integral equation solution has been used to study the influence of corrugation density and tooth thickness on the power loss, surface current, and the scattering from a ground plane/corrugated surface junction.

The Drosophila blood-brain barrier: development and function of a glial endothelium.

PubMed

Limmer, Stefanie; Weiler, Astrid; Volkenhoff, Anne; Babatz, Felix; Klämbt, Christian

2014-01-01

The efficacy of neuronal function requires a well-balanced extracellular ion homeostasis and a steady supply with nutrients and metabolites. Therefore, all organisms equipped with a complex nervous system developed a so-called blood-brain barrier, protecting it from an uncontrolled entry of solutes, metabolites or pathogens. In higher vertebrates, this diffusion barrier is established by polarized endothelial cells that form extensive tight junctions, whereas in lower vertebrates and invertebrates the blood-brain barrier is exclusively formed by glial cells. Here, we review the development and function of the glial blood-brain barrier of Drosophila melanogaster. In the Drosophila nervous system, at least seven morphologically distinct glial cell classes can be distinguished. Two of these glial classes form the blood-brain barrier. Perineurial glial cells participate in nutrient uptake and establish a first diffusion barrier. The subperineurial glial (SPG) cells form septate junctions, which block paracellular diffusion and thus seal the nervous system from the hemolymph. We summarize the molecular basis of septate junction formation and address the different transport systems expressed by the blood-brain barrier forming glial cells.

A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

NASA Astrophysics Data System (ADS)

Shiota, Koki; Kai, Kazuho; Nagaoka, Shiro; Tsuji, Takuto; Wakahara, Akihiro; Rusop, Mohamad

2016-07-01

The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors

NASA Technical Reports Server (NTRS)

Neugroschel, A.

1981-01-01

New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.

The role of ultra-thin SiO2 layers in metal-insulator-semiconductor (MIS) photoelectrochemical devices (Presentation Recording)

NASA Astrophysics Data System (ADS)

Esposito, Daniel V.

2015-08-01

Solid-state junctions based on a metal-insulator-semiconductor (MIS) architecture are of great interest for a number of optoelectronic applications such as photovoltaics, photoelectrochemical cells, and photodetection. One major advantage of the MIS junction compared to the closely related metal-semiconductor junction, or Schottky junction, is that the thin insulating layer (1-3 nm thick) that separates the metal and semiconductor can significantly reduce the density of undesirable interfacial mid-gap states. The reduction in mid-gap states helps "un-pin" the junction, allowing for significantly higher built-in-voltages to be achieved. A second major advantage of the MIS junction is that the thin insulating layer can also protect the underlying semiconductor from corrosion in an electrochemical environment, making the MIS architecture well-suited for application in (photo)electrochemical applications. In this presentation, discontinuous Si-based MIS junctions immersed in electrolyte are explored for use as i.) photoelectrodes for solar-water splitting in photoelectrochemical cells (PECs) and ii.) position-sensitive photodetectors. The development and optimization of MIS photoelectrodes for both of these applications relies heavily on understanding how processing of the thin SiO2 layer impacts the properties of nano- and micro-scale MIS junctions, as well as the interactions of the insulating layer with the electrolyte. In this work, we systematically explore the effects of insulator thickness, synthesis method, and chemical treatment on the photoelectrochemical and electrochemical properties of these MIS devices. It is shown that electrolyte-induced inversion plays a critical role in determining the charge carrier dynamics within the MIS photoelectrodes for both applications.

Transmitting and reflecting diffuser. [for ultraviolet light

NASA Technical Reports Server (NTRS)

Keafer, L. S., Jr.; Burcher, E. E.; Kopia, L. P. (Inventor)

1973-01-01

A near-Lambertian diffuser is described which transmits and reflects ultraviolet light. An ultraviolet grade fused silica substrate is coated with vaporized fuse silica. The coating thickness is controlled, one thickness causing ultraviolet light to diffuse and another thickness causing ultraviolet light to reflect a near Lambertian pattern.

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

NASA Astrophysics Data System (ADS)

Kuwano, Yuka; Kaga, Mitsuru; Morita, Takatoshi; Yamashita, Kouji; Yagi, Kouta; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

2013-08-01

We demonstrated lateral Mg activation along p-GaN layers underneath n-GaN surface layers in nitride-based light emitting diodes (LEDs) with GaInN tunnel junctions. A high temperature thermal annealing was effective for the lateral Mg activation when the p-GaN layers were partly exposed to an oxygen ambient as etched sidewalls. The activated regions gradually extended from the etched sidewalls to the centers with an increase of annealing time, observed as emission regions with current injection. These results suggest that hydrogen diffuses not vertically thorough the above n-GaN but laterally through the exposed portions of the p-GaN. The lowest voltage drop at the GaInN tunnel junction was estimated to be 0.9 V at 50 mA with the optimized annealing condition.

Tuning the thickness of electrochemically grafted layers in large area molecular junctions

NASA Astrophysics Data System (ADS)

Fluteau, T.; Bessis, C.; Barraud, C.; Della Rocca, M. L.; Martin, P.; Lacroix, J.-C.; Lafarge, P.

2014-09-01

We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 2-27 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

NASA Astrophysics Data System (ADS)

Pasanai, K.

2017-01-01

A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed.

Transport Imaging of Multi-Junction and CIGS Solar Cell Materials

DTIC Science & Technology

2011-12-01

solar cells start with the material charge transport parameters, namely the charge mobility, lifetime and diffusion length . It is the goal of...every solar cell manufacturer to maintain high carrier lifetime so as to realize long diffusion lengths . Long diffusion lengths ensure that the charges...Thus, being able to accurately determine the diffusion length of any solar cell material proves advantageous by providing insights

Preoperative and Postoperative CT Scan Assessment of Pterygomaxillary Junction in Patients Undergoing Le Fort I Osteotomy: Comparison of Pterygomaxillary Dysjunction Technique and Trimble Technique-A Pilot Study.

PubMed

Dadwal, Himani; Shanmugasundaram, S; Krishnakumar Raja, V B

2015-09-01

To determine the rate of complications and occurrence of pterygoid plate fractures comparing two techniques of Le Fort I osteotomy i.e., Classic Pterygomaxillary Dysjunction technique and Trimble technique and to know whether the dimensions of pterygomaxillary junction [determined preoperatively by computed tomography (CT) scan] have any influence on pterygomaxillary separation achieved during surgery. The study group consisted of eight South Indian patients with maxillary excess. A total of 16 sides were examined by CT. Preoperative CT was analyzed for all the patients. The thickness and width of the pterygomaxillary junction and the distance of the greater palatine canal from the pterygomaxillary junction was noted. Pterygomaxillary dysjunction was achieved by two techniques, the classic pterygomaxillary dysjunction technique (Group I) and Trimble technique (Group II). Patients were selected randomly and equally for both the techniques. Dysjunction was analyzed by postoperative CT. The average thickness of the pterygomaxillary junction on 16 sides was 4.5 ± 1.2 mm. Untoward pterygoid plate fractures occurred in Group I in 3 sides out of 8. In Trimble technique (Group II), no pterygoid plate fractures were noted. The average width of the pterygomaxillary junction was 7.8 ± 1.5 mm, distance of the greater palatine canal from pterygomaxillary junction was 7.4 ± 1.6 mm and the length of fusion of pterygomaxillary junction was 8.0 ± 1.9 mm. The Le Fort I osteotomy has become a standard procedure for correcting various dentofacial deformities. In an attempt to make Le Fort I osteotomy safer and avoid the problems associated with sectioning with an osteotome between the maxillary tuberosity and the pterygoid plates, Trimble suggested sectioning across the posterior aspect of the maxillary tuberosity itself. In our study, comparison between the classic pterygomaxillary dysjunction technique and the Trimble technique was made by using postoperative CT scan. It was found that unfavorable pterygoid plate fractures occurred only in dysjunction group and not in Trimble technique group. Preoperative CT scan assessment was done for all the patients to determine the dimension of the pterygomaxillary region. Preoperative CT scan proved to be helpful in not only determining the dimensions of the pterygomaxillary region but we also found out that thickness of the pterygomaxillary junction was an important parameter which may influence the separation at the pterygomaxillary region. No untoward fractures of the pterygoid plates were seen in Trimble technique (Group II) which makes it a safer technique than classic dysjunction technique. It was noted that pterygoid plate fractures occurred in patients in whom the thickness of the pterygomaxillary junction was <3.6 mm (preoperatively). Therefore, preoperative evaluation is important, on the basis of which we can decide upon the technique to be selected for safer and acceptable separation of pterygomaxillary region.

Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muthusubramanian, N.; Zant, H. S. J. van der; Galan, E.

We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al{sub 2}O{sub 3} thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10{sup −4} G{sub 0} (1 G{sub 0} = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were usedmore » to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.« less

Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

DOEpatents

Madan, A.

1984-12-10

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

Niobium tunnel junction fabrication using e-gun evaporation and SNAP

NASA Astrophysics Data System (ADS)

Kortlandt, J.; van der Zant, H. S. J.; Schellingerhout, A. J. G.; Mooij, J. E.

1990-11-01

We have fabricated high quality small area Nb-Al-Al 2O 3-Nb junctions with SNAP, making use of e-beam evaporation in a 10 -5 Pa diffusion pumped vacuum system. Nominal dimensions of the junctions are 8x8, 4x4 and 2x2 μm 2. We obtain typical current densities of 5-6 × 10 +2A/cm 2 and (critical current) x (subgap resistance) products of 40 mV.

The Reduction of TED in Ion Implanted Silicon

NASA Astrophysics Data System (ADS)

Jain, Amitabh

2008-11-01

The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 °C and the time spent within 50 °C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 °C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit gradient degradation at the junction and have junction depth and sheet resistance appropriate to the needs of future technology nodes. We have implemented millisecond annealing using a carbon dioxide laser to support high-volume manufacturing of 65 nm microprocessors and system-on-chip products. We further show how the use of molecular ion implantation to produce amorphousness followed by laser annealing to produce solid phase epitaxial regrowth results in junctions that meet the shallow depth and abruptness requirements of the 32 nm node.

On the nature of liquid junction and membrane potentials.

PubMed

Perram, John W; Stiles, Peter J

2006-09-28

Whenever a spatially inhomogeneous electrolyte, composed of ions with different mobilities, is allowed to diffuse, charge separation and an electric potential difference is created. Such potential differences across very thin membranes (e.g. biomembranes) are often interpreted using the steady state Goldman equation, which is usually derived by assuming a spatially constant electric field. Through the fundamental Poisson equation of electrostatics, this implies the absence of free charge density that must provide the source of any such field. A similarly paradoxical situation is encountered for thick membranes (e.g. in ion-selective electrodes) for which the diffusion potential is normally interpreted using the Henderson equation. Standard derivations of the Henderson equation appeal to local electroneutrality, which is also incompatible with sources of electric fields, as these require separated charges. We analyse self-consistent solutions of the Nernst-Planck-Poisson equations for a 1 : 1-univalent electrolyte to show that the Goldman and Henderson steady-state membrane potentials are artefacts of extraneous charges created in the reservoirs of electrolyte solution on either side of the membrane, due to the unphysical nature of the usual (Dirichlet) boundary conditions assumed to apply at the membrane-electrolyte interfaces. We also show, with the aid of numerical simulations, that a transient electric potential difference develops in any confined, but initially non-uniform, electrolyte solution. This potential difference ultimately decays to zero in the real steady state of the electrolyte, which corresponds to thermodynamic equilibrium. We explain the surprising fact that such transient potential differences are well described by the Henderson equation by using a computer algebra system to extend previous steady-state singular perturbation theories to the time-dependent case. Our work therefore accounts for the success of the Henderson equation in analysing experimental liquid-junction potentials.

Effect of current injection into thin-film Josephson junctions

DOE PAGES

Kogan, V. G.; Mints, R. G.

2014-11-11

New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to Λ=2λ 2/d;λ is the bulk London penetration depth of the film material and d is the film thickness.

Depth Measurements Using Alpha Particles and Upsettable SRAMs

NASA Technical Reports Server (NTRS)

Buehler, M. G.; Reier, M.; Soli, G. A.

1995-01-01

A custom designed SRAM was used to measure the thickness of integrated circuit over layers and the epi-layer thickness using alpha particles and a test SRAM. The over layer consists of oxide, nitride, metal, and junction regions.

Low resistance AL2O3 magnetic tunnel junctions optimized through in situ conductance measurements

NASA Astrophysics Data System (ADS)

Wolfman, J.; Mauri, D.; Lin, T.; Yang, J.; Chen, T.

2005-06-01

In situ electrical conductance is used to monitor the growth and natural oxidation of aluminum on top of a CoFe electrode. Light oxidation is found to enhance the electron specular scattering of the CoFe/vacuum interface. Aluminum deposited onto CoFe intermixes to a depth of a few atomic layers, however, subsequent natural oxidation tends to reverse this interdiffusion through oxygen-driven A1 segregation. At the right A1 thickness, natural oxidation creates a clean and specular CoFe /AlOx interface very similar to the best achievable CoFe/vacuum interface. For thicker A1, natural oxidation leaves behind underoxidized AlOx and most importantly an interdiffused CoFe /Al interface. Using 2Torr×150-s natural oxidation, we have fabricated magnetic tunnel junctions (MTJs) with a peak tunnel magnetoresistance (TMR) of 18% for a resistance area product of 7Ωμm2, at the A1 metal thickness of 6 Å. With the same oxidation process TMR drops to only 8% when A1 is increased to 9 Å. Contrary to the accepted view, we do not attribute this TMR drop to A1 underoxidation, but primarily to the interdiffusion at the CoFe /Al interface. This assertion is strongly supported by a second set of MTJs differing only by the insertion of a nano-oxide layer (NOL) on top of CoFe. In this case when Al is increased from 6 to 9 Å, the TMR does not drop but increases from 16% to 27%. This is significant because NOL is found to effectively prevent Al diffusion into CoFe. NOL is also found to act as a reservoir of oxygen, which is subsequently consumed by Al.

STRUCTURAL ASSESSMENT OF HYPERAUTOFLUORESCENT RING IN PATIENTS WITH RETINITIS PIGMENTOSA

PubMed Central

LIMA, LUIZ H.; CELLA, WENER; GREENSTEIN, VIVIENNE C.; WANG, NAN-KAI; BUSUIOC, MIHAI; THEODORE SMITH, R.; YANNUZZI, LAWRENCE A.; TSANG, STEPHEN H.

2009-01-01

Purpose To analyze the retinal structure underlying the hyperautofluorescent ring visible on fundus autofluorescence in patients with retinitis pigmentosa. Methods Twenty-four eyes of 13 patients with retinitis pigmentosa, aged 13 years to 67 years, were studied. The integrity of the photoreceptor cilia, also known as the inner/outer segment junction of the photoreceptors, the outer nuclear layer, and retinal pigment epithelium, was evaluated outside, across, and inside the ring with spectral-domain optical coherence tomography (OCT). Results Inside the foveal area, fundus autofluorescence did not detect abnormalities. Outside the ring, fundus autofluorescence revealed hypoautofluorescence compatible with the photoreceptor/retinal pigment epithelium degeneration. Spectral-domain OCT inside the ring, in the area of normal foveal fundus autofluorescence, revealed an intact retinal structure in all eyes and total retinal thickness values that were within normal limits. Across the ring, inner/outer segment junction disruption was observed and the outer nuclear layer was decreased in thickness in a centrifugal direction in all eyes. Outside the hyperautofluorescent ring, the inner/outer segment junction and the outer nuclear layer appeared to be absent and there were signs of retinal pigment epithelium degeneration. Conclusion Disruption of the inner/outer segment junction and a decrease in outer retinal thickness were found across the central hyperautofluorescent ring seen in retinitis pigmentosa. Outer segment phagocytosis by retinal pigment epithelium is necessary for the formation of an hyperautofluorescent ring. PMID:19584660

Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness

NASA Astrophysics Data System (ADS)

Kim, Jungsik; Oh, Hyeongwan; Kim, Jiwon; Meyyappan, M.; Lee, Jeong-Soo

2017-02-01

Effects of using asymmetric channel thickness in tunneling field-effect transistors (TFET) are investigated in sub-50 nm channel regime using two-dimensional (2D) simulations. As the thickness of the source side becomes narrower in narrow-source wide-drain (NSWD) TFETs, the threshold voltage (V th) and the subthreshold swing (SS) decrease due to enhanced gate controllability of the source side. The narrow source thickness can make the band-to-band tunneling (BTBT) distance shorter and induce much higher electric field near the source junction at the on-state condition. In contrast, in a TFET with wide-source narrow-drain (WSND), the SS shows almost constant values and the V th slightly increases with narrowing thickness of the drain side. In addition, the ambipolar current can rapidly become larger with smaller thickness on the drain side because of the shorter BTBT distance and the higher electric-field at the drain junction. The on-current of the asymmetric channel TFET is lower than that of conventional TFETs due to the volume limitation of the NSWD TFET and high series resistance of the WSND TFET. The on-current is almost determined by the channel thickness of the source side.

Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding

NASA Astrophysics Data System (ADS)

Morita, Sho; Liang, Jianbo; Matsubara, Moeko; Dhamrin, Marwan; Nishio, Yoshitaka; Shigekawa, Naoteru

2018-02-01

We fabricate 17-µm-thick Al foil/n-4H-SiC Schottky junctions by surface-activated bonding. Their current-voltage and capacitance-voltage characteristics are compared with those of Schottky junctions fabricated by evaporating Al layers on n-4H-SiC epilayers. We find that the ideality factor of Al foil/SiC junctions is larger than that of conventional junctions, which is due to the irradiation of the fast atom beam (FAB) of Ar. The ideality factor of Al foil/SiC junctions is improved by annealing at 400 °C. We also find that the Schottky barrier height is increased by FAB irradiation, which is likely to be due to the negative charges formed at SiC surfaces.

A Survey of Solid-State Microwave Power Devices

DTIC Science & Technology

1977-04-29

from the channel by a thin oxide layer (insulated gate FET or IGFET), it may be a diffused junction at the top of the channel (junction FET or JFET...greater than 100 GHz. YIG-tuned units are finding increasing use as extremely stable sources, whereas varactor tuning is used where tuning speed is

Transport and Junction Physics of Semiconductor-Metal Eutectic Composites

DTIC Science & Technology

1988-06-01

eutectic junction and includes the method for making contacts as well as current-voltage (I-V), capacitance- voltage (C-V), and electron-beam-induced current...junction was performed with another RTA at 8000C to 9000C for 10 s. This technique also worked well to provide the necessary ohmic contact. The necessary...solid state diffusion of Ta and Si. The diode is well behaved, with an ideality factor n = 1.10 ± 0.05. Deviation from the straight line forward

Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1984-01-01

Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction.

PubMed

Jeon, Youngeun; Jung, Sungchul; Jin, Hanbyul; Mo, Kyuhyung; Kim, Kyung Rok; Park, Wook-Ki; Han, Seong-Tae; Park, Kibog

2017-12-04

Terahertz (THz) detectors have been extensively studied for various applications such as security, wireless communication, and medical imaging. In case of metal-insulator-metal (MIM) tunnel junction THz detector, a small junction area is desirable because the detector response time can be shortened by reducing it. An edge metal-semiconductor-metal (EMSM) junction has been developed with a small junction area controlled precisely by the thicknesses of metal and semiconductor films. The voltage response of the EMSM THz detector shows the clear dependence on the polarization angle of incident THz wave and the responsivity is found to be very high (~2,169 V/W) at 0.4 THz without any antenna and signal amplifier. The EMSM junction structure can be a new and efficient way of fabricating the nonlinear device THz detector with high cut-off frequency relying on extremely small junction area.

Non-invasive microfluidic gap junction assay.

PubMed

Chen, Sisi; Lee, Luke P

2010-03-01

Gap junctions are protein channels between cells that allow direct electrical and metabolic coupling via the exchange of biomolecules and ions. Their expression, though ubiquitous in most mammalian cell types, is especially important for the proper functioning of cardiac and neuronal systems. Many existing methods for studying gap junction communication suffer from either unquantifiable data or difficulty of use. Here, we measure the extent of dye spread and effective diffusivities through gap junction connected cells using a quantitative microfluidic cell biology platform. After loading dye by hydrodynamic focusing of calcein/AM, dye transfer dynamics into neighboring, unexposed cells can be monitored via timelapse fluorescent microscopy. By using a selective microfluidic dye loading over a confluent layer of cells, we found that high expression of gap junctions in C6 cells transmits calcein across the monolayer with an effective diffusivity of 3.4 x 10(-13) m(2)/s, which are highly coupled by Cx43. We also found that the gap junction blocker 18alpha-GA works poorly in the presence of serum even at high concentrations (50 microM); however, it is highly effective down to 2.5 microM in the absence of serum. Furthermore, when the drug is washed out, dye spread resumes rapidly within 1 min for all doses, indicating the drug does not affect transcriptional regulation of connexins in these Cx43+ cells, in contrast to previous studies. This integrated microfluidic platform enables the in situ monitoring of gap junction communication, yielding dynamic information about intercellular molecular transfer and pharmacological inhibition and recovery.

Collective cell migration of thyroid carcinoma cells: a beneficial ability to override unfavourable substrates.

PubMed

Lobastova, Liudmila; Kraus, Dominik; Glassmann, Alexander; Khan, Dilaware; Steinhäuser, Christian; Wolff, Christina; Veit, Nadine; Winter, Jochen; Probstmeier, Rainer

2017-02-01

Tumor cell invasion and metastasis are life threatening events. Invasive tumor cells tend to migrate as collective sheets. In the present in vitro study we aimed to (i) assess whether collective tumor cells gain benefits in their migratory potential compared to single cells and (ii) to identify its putative underlying molecular mechanisms. The migratory potential of single and collective carcinoma cells was assessed using video time lapse microscopy and cell migration assays in the absence and presence of seven potential gap junction inhibitors or the Rac1 inhibitor Z62954982. The perturbation of gap junctions was assessed using a dye diffusion assay. In addition, LDH-based cytotoxicity and RT-PCR-based expression analyses were performed. Whereas single breast, cervix and thyroid carcinoma cells were virtually immobile on unfavourable plastic surfaces, we found that they gained pronounced migratory capacities as collectives under comparable conditions. Thyroid carcinoma cells, that were studied in more detail, were found to express specific subsets of connexins and to form active gap junctions as revealed by dye diffusion analysis. Although all potential gap junction blockers suppressed intercellular dye diffusion in at least one of the cell lines tested, only two of them were found to inhibit collective cell migration and none of them to inhibit single cell migration. In the presence of the Rac1 inhibitor Z62954982 collective migration, but not single cell migration, was found to be reduced up to 20 %. Our data indicate that collective migration enables tumor cells to cross otherwise unfavourable substrate areas. This capacity seems to be independent of intercellular communication via gap junctions, whereas Rac1-dependent intracellular signalling seems to be essential.

Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Soshi, E-mail: sato.soshi@cies.tohoku.ac.jp; Honjo, Hiroaki; Niwa, Masaaki

2015-04-06

We have investigated the redox reaction on the surface of Ta/CoFeB/MgO/CoFeB magnetic tunnel junction stack samples after annealing at 300, 350, and 400 °C for 1 h using angle-resolved X-ray photoelectron spectroscopy for precise analysis of the chemical bonding states. At a capping tantalum layer thickness of 1 nm, both the capping tantalum layer and the surface of the underneath CoFeB layer in the as-deposited stack sample were naturally oxidized. By comparison of the Co 2p and Fe 2p spectra among the as-deposited and annealed samples, reduction of the naturally oxidized cobalt and iron atoms occurred on the surface of the CoFeB layer.more » The reduction reaction was more significant at higher annealing temperature. Oxidized cobalt and iron were reduced by boron atoms that diffused toward the surface of the top CoFeB layer. A single CoFeB layer was prepared on SiO{sub 2}, and a confirmatory evidence of the redox reaction with boron diffusion was obtained by angle-resolved X-ray photoelectron spectroscopy analysis of the naturally oxidized surface of the CoFeB single layer after annealing. The redox reaction is theoretically reasonable based on the Ellingham diagram.« less

Thin film solar cells grown by organic vapor phase deposition

NASA Astrophysics Data System (ADS)

Yang, Fan

Organic solar cells have the potential to provide low-cost photovoltaic devices as a clean and renewable energy resource. In this thesis, we focus on understanding the energy conversion process in organic solar cells, and improving the power conversion efficiencies via controlled growth of organic nanostructures. First, we explain the unique optical and electrical properties of organic materials used for photovoltaics, and the excitonic energy conversion process in donor-acceptor heterojunction solar cells that place several limiting factors of their power conversion efficiency. Then, strategies for improving exciton diffusion and carrier collection are analyzed using dynamical Monte Carlo models for several nanostructure morphologies. Organic vapor phase deposition is used for controlling materials crystallization and film morphology. We improve the exciton diffusion efficiency while maintaining good carrier conduction in a bulk heterojunction solar cell. Further efficiency improvement is obtained in a novel nanocrystalline network structure with a thick absorbing layer, leading to the demonstration of an organic solar cell with 4.6% efficiency. In addition, solar cells using simultaneously active heterojunctions with broad spectral response are presented. We also analyze the efficiency limits of single and multiple junction organic solar cells, and discuss the challenges facing their practical implementations.

Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance

NASA Astrophysics Data System (ADS)

Sun, X.; Kolawa, E.; Im, S.; Garland, C.; Nicolet, M.-A.

Two ternary films about 100 nm thick, Ti34Si23N43 (b3) and Ti35Si13N52 (c3), are synthesized by reactively sputtering a Ti5Si3 or a Ti3Si target, respectively. The silicon-lean film (c3) has a columnar structure closely resembling that of TiN. As a diffusion barrier between a shallow Si n+p junction diode and a Cu overlayer, this material is effective up to 700 °C for 30 min annealing in vacuum, a performance similar to that for TiN. The silicon-rich (b3) film contains nanocrystals of TiN, randomly oriented and embedded in an amorphous matrix. A film of (b3) maintains the stability of the same diode structure up to 850 °C for 30 min in vacuum. This film (b3) is clearly superior to TiN or to (c3). Similar experiments performed with Al instead of Cu overlayers highlight the importance of the thermodynamic stability of a barrier layer and demonstrate convincingly that for stable barriers the microstructure is a parameter that directly determines the barrier performance.

A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiota, Koki, E-mail: a14510@sr.kagawa-nct.ac.jp; Kai, Kazuho; Nagaoka, Shiro, E-mail: nagaoka@es.kagawa-nct.ac.jp

The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As themore » result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.« less

A Theoretical Model of Jigsaw-Puzzle Pattern Formation by Plant Leaf Epidermal Cells

PubMed Central

Higaki, Takumi; Kutsuna, Natsumaro; Akita, Kae; Takigawa-Imamura, Hisako; Yoshimura, Kenji; Miura, Takashi

2016-01-01

Plant leaf epidermal cells exhibit a jigsaw puzzle–like pattern that is generated by interdigitation of the cell wall during leaf development. The contribution of two ROP GTPases, ROP2 and ROP6, to the cytoskeletal dynamics that regulate epidermal cell wall interdigitation has already been examined; however, how interactions between these molecules result in pattern formation remains to be elucidated. Here, we propose a simple interface equation model that incorporates both the cell wall remodeling activity of ROP GTPases and the diffusible signaling molecules by which they are regulated. This model successfully reproduces pattern formation observed in vivo, and explains the counterintuitive experimental results of decreased cellulose production and increased thickness. Our model also reproduces the dynamics of three-way cell wall junctions. Therefore, this model provides a possible mechanism for cell wall interdigitation formation in vivo. PMID:27054467

Surface and allied studies in silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1984-01-01

Measuring small-signal admittance versus frequency and forward bias voltage together with a new transient measurement apparently provides the most reliable and flexible method available for determining back surface recombination velocity and low-injection lifetime of the quasineutral base region of silicon solar cells. The new transient measurement reported here is called short-circuit-current decay (SCCD). In this method, forward voltage equal to about the open-circuit or the maximum power voltage establishes excess holes and electrons in the junction transition region and in the quasineutral regions. The sudden application of a short circuit causes an exiting of the excess holes and electrons in the transition region within about ten picoseconds. From observing the slope and intercept of the subsequent current decay, the base lifetime and surface recombination velocity can be determined. The admittance measurement previously mentioned then enters to increase accuracy particularly for devices for which the diffusion length exceeds the base thickness.

Vertical phase separation in bulk heterojunction solar cells formed by in situ polymerization of fulleride

PubMed Central

Zhang, Lipei; Xing, Xing; Zheng, Lingling; Chen, Zhijian; Xiao, Lixin; Qu, Bo; Gong, Qihuang

2014-01-01

Vertical phase separation of the donor and the acceptor in organic bulk heterojunction solar cells is crucial to improve the exciton dissociation and charge transport efficiencies. This is because whilst the exciton diffusion length is limited, the organic film must be thick enough to absorb sufficient light. However, it is still a challenge to control the phase separation of a binary blend in a bulk heterojunction device architecture. Here we report the realization of vertical phase separation induced by in situ photo-polymerization of the acrylate-based fulleride. The power conversion efficiency of the devices with vertical phase separation increased by 20%. By optimising the device architecture, the power conversion efficiency of the single junction device reached 8.47%. We believe that in situ photo-polymerization of acrylate-based fulleride is a universal and controllable way to realise vertical phase separation in organic blends. PMID:24861168

A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells

PubMed Central

Guo, Fei; Li, Ning; Fecher, Frank W.; Gasparini, Nicola; Quiroz, Cesar Omar Ramirez; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V.; Radmilović, Velimir R.; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J.

2015-01-01

The multi-junction concept is the most relevant approach to overcome the Shockley–Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies. PMID:26177808

A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

PubMed

Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

2015-07-16

The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

Coupled diffusion processes and 2D affinities of adhesion molecules at synthetic membrane junctions

NASA Astrophysics Data System (ADS)

Peel, Christopher; Choudhuri, Kaushik; Schmid, Eva M.; Bakalar, Matthew H.; Ann, Hyoung Sook; Fletcher, Daniel A.; Journot, Celine; Turberfield, Andrew; Wallace, Mark; Dustin, Michael

A more complete understanding of the physically intrinsic mechanisms underlying protein mobility at cellular interfaces will provide additional insights into processes driving adhesion and organization in signalling junctions such as the immunological synapse. We observed diffusional slowing of structurally diverse binding proteins at synthetic interfaces formed by giant unilamellar vesicles (GUVs) on supported lipid bilayers (SLBs) that shows size dependence not accounted for by existing models. To model the effects of size and intermembrane spacing on interfacial reaction-diffusion processes, we describe a multistate diffusion model incorporating entropic effects of constrained binding. This can be merged with hydrodynamic theories of receptor-ligand diffusion and coupling to thermal membrane roughness. A novel synthetic membrane adhesion assay based on reversible and irreversible DNA-mediated interactions between GUVs and SLBs is used to precisely vary length, affinity, and flexibility, and also provides a platform to examine these effects on the dynamics of processes such as size-based segregation of binding and non-binding species.

Effect of gamma-ray irradiation on the surface states of MOS tunnel junctions

NASA Technical Reports Server (NTRS)

Ma, T. P.; Barker, R. C.

1974-01-01

Gamma-ray irradiation with doses up to 8 megarad produces no significant change on either the C(V) or the G(V) characteristics of MOS tunnel junctions with intermediate oxide thicknesses (40-60 A), whereas the expected flat-band shift toward negative electrode voltages occurs in control thick oxide capacitors. A simple tunneling model would explain the results if the radiation-generated hole traps are assumed to lie below the valence band of the silicon. The experiments also suggest that the observed radiation-generated interface states in conventional MOS devices are not due to the radiation damage of the silicon surface.

Performance of Different “Lab-On-Chip” Geometries for Making Double Emulsions to Form Polystyrene Shells

DOE PAGES

Viza, N. D.; Harding, D. R.

2017-12-20

Fluid properties and the geometry of lab-on-chip (LOC) designs together affect the formation of double emulsions for making inertial confinement fusion targets. Critical fluid properties include the fluids’ velocities and interfacial tension—a coupled effect that is best characterized by the capillary number (Ca)—and the relative volumetric flow rates (φ). The important geometry of the LOC is the orientation of the channels where they intersect (junction) and the spacing between successive junctions. T-junctions and focus-flow devices were tested. The latter geometry of a double cross (focus flow) performed better: single-emulsion droplets were formed over a wide range of fluid parameters (0.03more » < φ < 0.17 and 0.0003 < Ca < 0.001) at the first junction, and double emulsions were formed over a more limited range (φ > 0.5 and Ca < 0.4) at the second junction. A LOC design using the focus-flow design formed water–oil–water (W/O/W) double emulsions with the oil phase containing polystyrene. The double emulsions yielded shells with an outer dimension ranging from 2.3±0.07 mm to 4.3±0.23 mm and a wall thickness ranging from 30 μm to 1.6 mm. Thus, the value of the flow-rate ratio at the second junction provided the most-effective parameter for controlling the inner diameter, outer diameter, and wall thickness of the shell.« less

Performance of Different “Lab-On-Chip” Geometries for Making Double Emulsions to Form Polystyrene Shells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Viza, N. D.; Harding, D. R.

Fluid properties and the geometry of lab-on-chip (LOC) designs together affect the formation of double emulsions for making inertial confinement fusion targets. Critical fluid properties include the fluids’ velocities and interfacial tension—a coupled effect that is best characterized by the capillary number (Ca)—and the relative volumetric flow rates (φ). The important geometry of the LOC is the orientation of the channels where they intersect (junction) and the spacing between successive junctions. T-junctions and focus-flow devices were tested. The latter geometry of a double cross (focus flow) performed better: single-emulsion droplets were formed over a wide range of fluid parameters (0.03more » < φ < 0.17 and 0.0003 < Ca < 0.001) at the first junction, and double emulsions were formed over a more limited range (φ > 0.5 and Ca < 0.4) at the second junction. A LOC design using the focus-flow design formed water–oil–water (W/O/W) double emulsions with the oil phase containing polystyrene. The double emulsions yielded shells with an outer dimension ranging from 2.3±0.07 mm to 4.3±0.23 mm and a wall thickness ranging from 30 μm to 1.6 mm. Thus, the value of the flow-rate ratio at the second junction provided the most-effective parameter for controlling the inner diameter, outer diameter, and wall thickness of the shell.« less

Method for producing a thin sample band in a microchannel device

DOEpatents

Griffiths, Stewart K [Livermore, CA; Nilson, Robert H [Cardiff, CA

2004-08-03

The present invention improves the performance of microchannel systems for chemical and biological synthesis and analysis by providing a method and apparatus for producing a thin band of a species sample. Thin sample bands improve the resolution of microchannel separation processes, as well as many other processes requiring precise control of sample size and volume. The new method comprises a series of steps in which a species sample is manipulated by controlled transport through a junction formed at the intersection of four or more channels. A sample is first inserted into the end of one of these channels in the vicinity of the junction. Next, this sample is thinned by transport across the junction one or more times. During these thinning steps, flow enters the junction through one of the channels and exists through those remaining, providing a divergent flow field that progressively stretches and thins the band with each traverse of the junction. The thickness of the resulting sample band may be smaller than the channel width. Moreover, the thickness of the band may be varied and controlled by altering the method alone, without modification to the channel or junction geometries. The invention is applicable to both electroosmotic and electrophoretic transport, to combined electrokinetic transport, and to some special cases in which bulk fluid transport is driven by pressure gradients. It is further applicable to channels that are open, filled with a gel or filled with a porous or granular material.

Apparatus for producing a thin sample band in a microchannel system

DOEpatents

Griffiths, Stewart K [Livermore, CA; Nilson, Robert H [Cardiff, CA

2008-05-13

The present invention improves the performance of microchannel systems for chemical and biological synthesis and analysis by providing a method and apparatus for producing a thin band of a species sample. Thin sample bands improve the resolution of microchannel separation processes, as well as many other processes requiring precise control of sample size and volume. The new method comprises a series of steps in which a species sample is manipulated by controlled transport through a junction formed at the intersection of four or more channels. A sample is first inserted into the end of one of these channels in the vicinity of the junction. Next, this sample is thinned by transport across the junction one or more times. During these thinning steps, flow enters the junction through one of the channels and exists through those remaining, providing a divergent flow field that progressively stretches and thins the band with each traverse of the junction. The thickness of the resulting sample band may be smaller than the channel width. Moreover, the thickness of the band may be varied and controlled by altering the method alone, without modification to the channel or junction geometries. The invention is applicable to both electroosmotic and electrophoretic transport, to combined electrokinetic transport, and to some special cases in which bulk fluid transport is driven by pressure gradients. It is further applicable to channels that are open, filled with a gel or filled with a porous or granular material.

Distribution of acetylcholine receptors at frog neuromuscular junctions with a discussion of some physiological implications.

PubMed Central

Matthews-Bellinger, J; Salpeter, M M

1978-01-01

1. The distribution of acetylcholine receptors (AChR) at frog cutaneous pectoris neuromuscular junctions was studied quantitatively using [1125]alpha-bungarotoxin (alpha-BTX) labelling and EM autoradiography. 2. We found that, as in mouse end-plates, the AChR is localized uniformly along the thickened post-junctional membrane. In the frog muscle this specialized membrane constitutes approximately the top 50% of the junctional folds. 3. The receptor site density is approximately 26,000 +/- 6000 sites/micrometer2 on the thickened post-junctional membrane and falls sharply to approximately 50 sites/micrometer2 within 15 micrometer from the axon terminal. 4. alpha-BTX site density on the presynaptic axonal membrane was directly determined to be at most 5% of the value on the thickened post-junctional membrane. 5. The high post junctional AChR site density leads us to conclude that: (a) each quantum of ACh needs to spread only over a very small post-junctional area (to be called the 'critical area') before it encounters as many AChR (plus AchE) sites as there are ACh molecules in the quantum (for a packet of 10(4) ACh molecules this critical area is approximately 0.3 micrometer2), (b) the average concentration of ACh prevailing in the cleft over this critical area during a quantal response will be approximately 10(-3)M (independent of the size of the quantal packet), and (c) since 10(-3)M-ACh is large compared to any estimates of the dissociation constant Kd for ACh binding to the AChR, the ACh will essentially saturate the AChR within the critical area (provided the ACh binding rate is sufficiently faster than the ACh spreading rate). 6. The total receptive surface for a frog end-plate is calculated to be approximately 1500 micrometer2, and therefore an end-plate potential resulting from 300 quanta will be due to the activation of less than 10% of the total receptive area. 7. Free diffusion would allow each small post-junctional critical area to be reached in less than 15 musec. Therefore, either the recorded rise time of the miniature end-plate is not predominantly a function of ACh diffusion time, or, as suggested by Gage & McBurney (1975), the net rate of movement of ACh in the cleft is much slower than indicated by the free diffusion constant. Images Fig. 1a and b Fig. 2 Figs. 3, 5 Fig. 4 PMID:307600

Process research of non-cz silicon material. Low cost solar array project, cell and module formation research area

NASA Technical Reports Server (NTRS)

1982-01-01

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated.

Determination of pollutant diffusion coefficients in naturally formed biofilms using a single tube extractive membrane bioreactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, S.F.; Splendiani, A.; Freitas dos Santos, L.M.

A novel technique has been used to determine the effective diffusion coefficients for 1,1,2-trichloroethane (TCE), a nonreacting tracer, in biofilms growing on the external surface of a silicone rubber membrane tube during degradation of 1,2-dichloroethane (DCE) by Xanthobacter autotrophicus GJ10 and monochlorobenzene (MCB) by Pseudomonas JS150. Experiments were carried out in a single tube extractive membrane bioreactor (STEMB), whose configuration makes it possible to measure the transmembrane flux of substrates. A video imaging technique (VIT) was employed for in situ biofilm thickness measurement and recording. Diffusion coefficients of TCE in the biofilms and TCE mass transfer coefficients in the liquidmore » films adjacent to the biofilms were determined simultaneously using a resistances-in-series diffusion model. It was found that the flux and overall mass transfer coefficient of TCE decrease with increasing biofilm thickness, showing the importance of biofilm diffusion on the mass transfer process. Similar fluxes were observed for the nonreacting tracer (TCE) and the reactive substrates (MCB or DCE), suggesting that membrane-attached biofilm systems can be rate controlled primarily by substrate diffusion. The TCE diffusion coefficient in the JS150 biofilm appeared to be dependent on biofilm thickness, decreasing markedly for biofilm thicknesses of >1 mm. The values of the TCE diffusion coefficients in the JS150 biofilms <1-mm thick are approximately twice those in water and fall to around 30% of the water value for biofilms >1-mm thick.« less

Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L10-FePd perpendicular magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Zhang, De-Lin; Schliep, Karl B.; Wu, Ryan J.; Quarterman, P.; Reifsnyder Hickey, Danielle; Lv, Yang; Chao, Xiaohui; Li, Hongshi; Chen, Jun-Yang; Zhao, Zhengyang; Jamali, Mahdi; Mkhoyan, K. Andre; Wang, Jian-Ping

2018-04-01

We studied the tunnel magnetoresistance (TMR) of L10-FePd perpendicular magnetic tunnel junctions (p-MTJs) with an FePd free layer and an inserted diffusion barrier. The diffusion barriers studied here (Ta and W) were shown to enhance the TMR ratio of the p-MTJs formed using high-temperature annealing, which are necessary for the formation of high quality L10-FePd films and MgO barriers. The L10-FePd p-MTJ stack was developed with an FePd free layer with a stack of FePd/X/Co20Fe60B20, where X is the diffusion barrier, and patterned into micron-sized MTJ pillars. The addition of the diffusion barrier was found to greatly enhance the magneto-transport behavior of the L10-FePd p-MTJ pillars such that those without a diffusion barrier exhibited negligible TMR ratios (<1.0%), whereas those with a Ta (W) diffusion barrier exhibited TMR ratios of 8.0% (7.0%) at room temperature and 35.0% (46.0%) at 10 K after post-annealing at 350 °C. These results indicate that diffusion barriers could play a crucial role in realizing high TMR ratios in bulk p-MTJs such as those based on FePd and Mn-based perpendicular magnetic anisotropy materials for spintronic applications.

Thermoelectric generator with hinged assembly for fins

DOEpatents

Purdy, David L.; Shapiro, Zalman M.; Hursen, Thomas F.; Maurer, Gerould W.

1976-11-02

A cylindrical casing has a central shielded capsule of radioisotope fuel. A plurality of thermonuclear modules are axially arranged with their hot junctions resiliently pressed toward the shield and with their cold junctions adjacent a transition member having fins radiating heat to the environment. For each module, the assembly of transition member and fins is hinged to the casing for swinging to permit access to and removal of such module. A ceramic plate having gold layers on opposite faces prevents diffusion bonding of the hot junction to the shield.

Quasiparticle entropy in superconductor/normal metal/superconductor proximity junctions in the diffusive limit

NASA Astrophysics Data System (ADS)

Virtanen, P.; Vischi, F.; Strambini, E.; Carrega, M.; Giazotto, F.

2017-12-01

We discuss the quasiparticle entropy and heat capacity of a dirty superconductor/normal metal/superconductor junction. In the case of short junctions, the inverse proximity effect extending in the superconducting banks plays a crucial role in determining the thermodynamic quantities. In this case, commonly used approximations can violate thermodynamic relations between supercurrent and quasiparticle entropy. We provide analytical and numerical results as a function of different geometrical parameters. Quantitative estimates for the heat capacity can be relevant for the design of caloritronic devices or radiation sensor applications.

Structure-dependent magnetoresistance and spin-transfer torque in antiferromagnetic Fe |MgO |FeMn |Cu tunnel junctions

NASA Astrophysics Data System (ADS)

Jia, Xingtao; Tang, Huimin; Wang, Shizhuo; Qin, Minghui

2017-02-01

We predict large magnetoresistance (MR) and spin transfer torque (STT) in antiferromagnetic Fe |MgO |FeMn |Cu tunnel junctions based on first-principles scattering theory. MR as large as ˜100 % is found in one junction. Magnetic dynamic simulations show that STT acting on the antiferromagnetic order parameter dominates the spin dynamics, and an electronic bias of order 10-1mV and current density of order 105Acm-2 can switches a junction of three-layer MgO, they are about one order smaller than that in Fe |MgO |Fe junction with the same barrier thickness, respectively. The multiple scattering in the antiferromagnetic region is considered to be responsible for the enhanced spin torque and smaller switching current density.

Study of fluorescence quenching due to 2, 3, 5, 6-tetrafluoro-7, 7', 8, 8'-tetracyano quinodimethane and its solid state diffusion analysis using photoluminescence spectroscopy.

PubMed

Tyagi, Priyanka; Tuli, Suneet; Srivastava, Ritu

2015-02-07

In this work, we have studied the fluorescence quenching and solid state diffusion of 2, 3, 5, 6-tetrafluoro-7,  7',  8,  8'-tetracyano quinodimethane (F4-TCNQ) using photoluminescence (PL) spectroscopy. Quenching studies were performed with tris (8-hydroxyquinolinato) aluminum (Alq3) in solid state samples. Thickness of F4-TCNQ was varied in order to realize different concentrations and study the effect of concentration. PL intensity has reduced with the increase in F4-TCNQ thicknesses. Stern-Volmer and bimolecular quenching constants were evaluated to be 13.8 M(-1) and 8.7 × 10(8) M(-1) s(-1), respectively. The quenching mechanism was found to be of static type, which was inferred by the independent nature of excited state life time from the F4-TCNQ thickness. Further, solid state diffusion of F4-TCNQ was studied by placing a spacing layer of α-NPD between F4-TCNQ and Alq3, and its thickness was varied to probe the diffusion length. PL intensity was found to increase with the increase in this thickness. Quenching efficiency was evaluated as a function of distance between F4-TCNQ and Alq3. These studies were performed for the samples having 1, 2.5, and 5.5 nm thicknesses of F4-TCNQ to study the thickness dependence of diffusion length. Diffusion lengths were evaluated to be 12.5, 15, and 20 nm for 1, 2.5, and 5.5 nm thicknesses of F4-TCNQ. These diffusion lengths were found to be very close to that of determined by secondary ion mass spectroscopy technique.

Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

DOEpatents

Hawkins, G.A.; Clarke, J.

1975-10-31

A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

LATERAL HEAT FLOW INFRARED THERMOGRAPHY FOR THICKNESS INDEPENDENT DETERMINATION OF THERMAL DIFFUSIVITY IN CFRP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tralshawala, Nilesh; Howard, Don; Knight, Bryon

2008-02-28

In conventional infrared thermography, determination of thermal diffusivity requires thickness information. Recently GE has been experimenting with the use of lateral heat flow to determine thermal diffusivity without thickness information. This work builds on previous work at NASA Langley and Wayne State University but we incorporate thermal time of flight (tof) analysis rather than curve fitting to obtain quantitative information. We have developed appropriate theoretical models and a tof based data analysis framework to experimentally determine all components of thermal diffusivity from the time-temperature measurements. Initial validation was carried out using finite difference simulations. Experimental validation was done using anisotropicmore » carbon fiber reinforced polymer (CFRP) composites. We found that in the CFRP samples used, the in-plane component of diffusivity is about eight times larger than the through-thickness component.« less

GaAs Photovoltaics on Polycrystalline Ge Substrates

NASA Technical Reports Server (NTRS)

Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

2007-01-01

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Microfabrication of microsystem-enabled photovoltaic (MEPV) cells

NASA Astrophysics Data System (ADS)

Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose L.; Resnick, Paul J.; Wanlass, Mark W.; Clews, Peggy J.; Pluym, Tammy C.; Sanchez, Carlos A.; Gupta, Vipin P.

2011-02-01

Microsystem-Enabled Photovoltaic (MEPV) cells allow solar PV systems to take advantage of scaling benefits that occur as solar cells are reduced in size. We have developed MEPV cells that are 5 to 20 microns thick and down to 250 microns across. We have developed and demonstrated crystalline silicon (c-Si) cells with solar conversion efficiencies of 14.9%, and gallium arsenide (GaAs) cells with a conversion efficiency of 11.36%. In pursuing this work, we have identified over twenty scaling benefits that reduce PV system cost, improve performance, or allow new functionality. To create these cells, we have combined microfabrication techniques from various microsystem technologies. We have focused our development efforts on creating a process flow that uses standard equipment and standard wafer thicknesses, allows all high-temperature processing to be performed prior to release, and allows the remaining post-release wafer to be reprocessed and reused. The c-Si cell junctions are created using a backside point-contact PV cell process. The GaAs cells have an epitaxially grown junction. Despite the horizontal junction, these cells also are backside contacted. We provide recent developments and details for all steps of the process including junction creation, surface passivation, metallization, and release.

Regulation of germ cell development by intercellular signaling in the mammalian ovarian follicle.

PubMed

Clarke, Hugh J

2018-01-01

Prior to ovulation, the mammalian oocyte undergoes a process of differentiation within the ovarian follicle that confers on it the ability to give rise to an embryo. Differentiation comprises two phases-growth, during which the oocyte increases more than 100-fold in volume as it accumulates macromolecules and organelles that will sustain early embryogenesis; and meiotic maturation, during which the oocyte executes the first meiotic division and prepares for the second division. Entry of an oocyte into the growth phase appears to be triggered when the adjacent granulosa cells produce specific growth factors. As the oocyte grows, it elaborates a thick extracellular coat termed the zona pellucida. Nonetheless, cytoplasmic extensions of the adjacent granulosa cells, termed transzonal projections (TZPs), enable them to maintain contact-dependent communication with the oocyte. Through gap junctions located where the TZP tips meet the oocyte membrane, they provide the oocyte with products that sustain its metabolic activity and signals that regulate its differentiation. Conversely, the oocyte secretes diffusible growth factors that regulate proliferation and differentiation of the granulosa cells. Gap junction-permeable products of the granulosa cells prevent precocious initiation of meiotic maturation, and the gap junctions also enable oocyte maturation to begin in response to hormonal signals received by the granulosa cells. Development of the oocyte or the somatic compartment may also be regulated by extracellular vesicles newly identified in follicular fluid and at TZP tips, which could mediate intercellular transfer of macromolecules. Oocyte differentiation thus depends on continuous signaling interactions with the somatic cells of the follicle. WIREs Dev Biol 2018, 7:e294. doi: 10.1002/wdev.294 This article is categorized under: Gene Expression and Transcriptional Hierarchies > Cellular Differentiation Signaling Pathways > Cell Fate Signaling Early Embryonic Development > Gametogenesis. © 2017 Wiley Periodicals, Inc.

Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

NASA Astrophysics Data System (ADS)

Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Yoshiaki; Sonobe, Yoshiaki; Takanashi, Koki

2018-05-01

Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

Gilbert Damping Parameter in MgO-Based Magnetic Tunnel Junctions from First Principles

NASA Astrophysics Data System (ADS)

Tang, Hui-Min; Xia, Ke

2017-03-01

We perform a first-principles study of the Gilbert damping parameter (α ) in normal-metal/MgO-cap/ferromagnet/MgO-barrier/ferromagnetic magnetic tunnel junctions. The damping is enhanced by interface spin pumping, which can be parametrized by the spin-mixing conductance (G↑↓ ). The calculated dependence of Gilbert damping on the thickness of the MgO capping layer is consistent with experiment and indicates that the decreases in α with increasing thickness of the MgO capping layer is caused by suppression of spin pumping. Smaller α can be achieved by using a clean interface and alloys. For a thick MgO capping layer, the imaginary part of the spin-mixing conductance nearly equals the real part, and the large imaginary mixing conductance implies that the change in the frequency of ferromagnetic resonance can be observed experimentally. The normal-metal cap significantly affects the Gilbert damping.

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE PAGES

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; ...

2017-12-20

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Excimer laser annealing to fabricate low cost solar cells

NASA Technical Reports Server (NTRS)

1984-01-01

The objective is to show whether or not pulsed excimer laser annealing (PELA) of ion-implanted junctions is a cost effective replacement for diffused junctions in fabricating crystalline silicon solar cells. The preliminary economic analysis completed shows that the use of PELA to fabricate both the front junction and back surface field (BSF) would cost approximately 35 cents per peak watt (Wp), compared to a cost of 15 cents/Wp for diffusion, aluminum BSF and an extra cleaning step in the baseline process. The cost advantage of the PELA process depends on improving the average cell efficiency from 14% to 16%, which would lower the overall cost of the module by about 15 cents/Wp. An optimized PELA process compatible with commercial production is to be developed, and increased cell efficiency with sufficient product for adequate statistical analysis demonstrated. An excimer laser annealing station was set-up and made operational. The first experiment used 248 nm radiation to anneal phosphorus implants in polished and texture-etched silicon.

Probing fast heating in magnetic tunnel junction structures with exchange bias

NASA Astrophysics Data System (ADS)

Papusoi, C.; Sousa, R.; Herault, J.; Prejbeanu, I. L.; Dieny, B.

2008-10-01

Heat diffusion in a magnetic tunnel junction (MTJ) having a ferromagnetic/antiferromagnetic free layer is investigated. The MTJ is heated by an electric current pulse of power PHP, flowing through the junction in current perpendicular to the plane (CPP) geometry, via Joule heat dissipation in the tunnel barrier. According to a proposed one-dimensional (1D) model of heat diffusion, when an electric voltage is applied to the MTJ, the free layer experiences a transient temperature regime, characterized by an exponential increase of its temperature TAF with a time constant τTR, followed by a steady temperature regime characterized by TAF=TRT+αPHP, where TRT is the room temperature and α is a constant. Magnetic transport measurements of exchange bias HEX acting on the free layer allow the determination of α and τTR. The experimental values of α and τTR are in agreement with those calculated using the 1D model and an estimation of the MTJ thermodynamic parameters based on the Dulong-Petit and Widemann-Franz laws.

Temperature dependence of copper diffusion in different thickness amorphous tungsten/tungsten nitride layer

NASA Astrophysics Data System (ADS)

Asgary, Somayeh; Hantehzadeh, Mohammad Reza; Ghoranneviss, Mahmood

2017-11-01

The amorphous W/WN films with various thickness (10, 30 and 40 nm) and excellent thermal stability were successfully prepared on SiO2/Si substrate with evaporation and reactive evaporation method. The W/WN bilayer has technological importance because of its low resistivity, high melting point, and good diffusion barrier properties between Cu and Si. The thermal stability was evaluated by X-ray diffractometer (XRD) and Scanning Electron Microscope (SEM). In annealing process, the amorphous W/WN barrier crystallized and this phenomenon is supposed to be the start of Cu atoms diffusion through W/WN barrier into Si. With occurrence of the high-resistive Cu3Si phase, the W/WN loses its function as a diffusion barrier. The primary mode of Cu diffusion is the diffusion through grain boundaries that form during heat treatments. The amorphous structure with optimum thickness is the key factor to achieve a superior diffusion barrier characteristic. The results show that the failure temperature increased by increasing the W/WN film thickness from 10 to 30 nm but it did not change by increasing the W/WN film thickness from 30 to 40 nm. It is found that the 10 and 40 nm W/WN films are good diffusion barriers at least up to 800°C while the 30 nm W/WN film shows superior properties as a diffusion barrier, but loses its function as a diffusion barrier at about 900°C (that is 100°C higher than for 10 and 40 nm W/WN films).

On the meaning of the diffusion layer thickness for slow electrode reactions.

PubMed

Molina, A; González, J; Laborda, E; Compton, R G

2013-02-21

A key concept underpinning electrochemical science is that of the diffusion layer - the zone of depletion around an electrode accompanying electrolysis. The size of this zone can be found either from the simulated or measured concentration profiles (yielding the 'true' diffusion layer thickness) or, in the case of the Nernst ('linear') diffusion layer by extrapolating the concentration gradient at the electrode surface to the distance at which the concentration takes its bulk value. The latter concept is very well developed in the case of fast (so-called reversible) electrode processes, however the study of the linear diffusion layer has received scant attention in the case of slow charge transfer processes, despite its study being of great interest in the analysis of the influence of different experimental variables which determine the electrochemical response. Analytical explicit solutions for the concentration profiles, surface concentrations and real and linear diffusion layers corresponding to the application of a potential step to a slow charge transfer process are presented. From these expressions the dependence of the diffusion layer thickness on the potential, pulse time, heterogeneous rate constant and ratio of bulk concentrations of electroactive species and of diffusion coefficients is quantified. A profound influence of the reversibility degree of the charge transfer on the diffusion layer thickness is clear, showing that for non-reversible processes the real and linear diffusion layers reveal a minimum thickness which coincides with the equilibrium potential of the redox couple in the former case and with the reversible half-wave potential in the latter one.

Method And Apparatus For Reducing Sample Dispersion In Turns And Junctions Of Micro-Channel Systems

DOEpatents

Griffiths, Stewart K. , Nilson, Robert H.

2004-05-11

What is disclosed pertains to improvement in the performance of microchannel devices by providing turns, wyes, tees, and other junctions that produce little dispersion of a sample as it traverses the turn or junction. The reduced dispersion results from contraction and expansion regions that reduce the cross-sectional area over some portion of the turn or junction. By carefully designing the geometries of these regions, sample dispersion in turns and junctions is reduced to levels comparable to the effects of ordinary diffusion. The low dispersion features are particularly suited for microfluidic devices and systems using either electromotive force, pressure, or combinations thereof as the principle of fluid transport. Such microfluidic devices and systems are useful for separation of components, sample transport, reaction, mixing, dilution or synthesis, or combinations thereof.

Study of shallow junction formation by boron-containing cluster ion implantation of silicon and two-stage annealing

NASA Astrophysics Data System (ADS)

Lu, Xin-Ming

Shallow junction formation made by low energy ion implantation and rapid thermal annealing is facing a major challenge for ULSI (ultra large scale integration) as the line width decreases down to the sub micrometer region. The issues include low beam current, the channeling effect in low energy ion implantation and TED (transient enhanced diffusion) during annealing after ion implantation. In this work, boron containing small cluster ions, such as GeB, SiB and SiB2, was generated by using the SNICS (source of negative ion by cesium sputtering) ion source to implant into Si substrates to form shallow junctions. The use of boron containing cluster ions effectively reduces the boron energy while keeping the energy of the cluster ion beam at a high level. At the same time, it reduces the channeling effect due to amorphization by co-implanted heavy atoms like Ge and Si. Cluster ions have been used to produce 0.65--2keV boron for low energy ion implantation. Two stage annealing, which is a combination of low temperature (550°C) preannealing and high temperature annealing (1000°C), was carried out to anneal the Si sample implanted by GeB, SiBn clusters. The key concept of two-step annealing, that is, the separation of crystal regrowth, point defects removal with dopant activation from dopant diffusion, is discussed in detail. The advantages of the two stage annealing include better lattice structure, better dopant activation and retarded boron diffusion. The junction depth of the two stage annealed GeB sample was only half that of the one-step annealed sample, indicating that TED was suppressed by two stage annealing. Junction depths as small as 30 nm have been achieved by two stage annealing of sample implanted with 5 x 10-4/cm2 of 5 keV GeB at 1000°C for 1 second. The samples were evaluated by SIMS (secondary ion mass spectrometry) profiling, TEM (transmission electron microscopy) and RBS (Rutherford Backscattering Spectrometry)/channeling. Cluster ion implantation in combination with two-step annealing is effective in fabricating ultra-shallow junctions.

Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction

NASA Astrophysics Data System (ADS)

Reddy, P. R. Sekhar; Janardhanam, V.; Jyothi, I.; Harsha, Cirandur Sri; Reddy, V. Rajagopal; Lee, Sung-Nam; Won, Jonghan; Choi, Chel-Jong

2018-02-01

Effects of the thickness of copper phthalocyanine (CuPc) film (2, 5, 10, 15, 20, 30 and 40 nm) on the surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction have been investigated. The optical band gap of CuPc film was increased with increase in the thickness of the CuPc film. The electrical properties of the Au/n-Si Schottky junction and Au/CuPc/n-Si heterojunctions were characterized by current-voltage ( I-V) and capacitance-voltage ( C-V) measurements. The barrier height, ideality factor and series resistance were estimated based on the I-V, Cheung's and Norde's methods. The barrier heights increased with increasing CuPc interlayer thickness up to 15 nm and remained constant for thickness above 20 nm, associated with the incapability of the generated carriers to reach the interface. The discrepancy in the barrier heights obtained from I-V and C-V measurements indicates the presence of barrier inhomogeneity at the interface as evidenced by higher ideality factor values. It can be concluded that the electrical properties of Au/n-Si Schottky junction can be significantly altered with the variation of CuPc thickness as interlayer.

Further morphological evidence on South African earliest Homo lower postcanine dentition: Enamel thickness and enamel dentine junction.

PubMed

Pan, Lei; Dumoncel, Jean; de Beer, Frikkie; Hoffman, Jakobus; Thackeray, John Francis; Duployer, Benjamin; Tenailleau, Christophe; Braga, José

2016-07-01

The appearance of the earliest members of the genus Homo in South Africa represents a key event in human evolution. Although enamel thickness and enamel dentine junction (EDJ) morphology preserve important information about hominin systematics and dietary adaptation, these features have not been sufficiently studied with regard to early Homo. We used micro-CT to compare enamel thickness and EDJ morphology among the mandibular postcanine dentitions of South African early hominins (N = 30) and extant Homo sapiens (N = 26), with special reference to early members of the genus Homo. We found that South African early Homo shows a similar enamel thickness distribution pattern to modern humans, although three-dimensional average and relative enamel thicknesses do not distinguish australopiths, early Homo, and modern humans particularly well. Based on enamel thickness distributions, our study suggests that a dietary shift occurred between australopiths and the origin of the Homo lineage. We also observed that South African early Homo postcanine EDJ combined primitive traits seen in australopith molars with derived features observed in modern human premolars. Our results confirm that some dental morphological patterns in later Homo actually occurred early in the Homo lineage, and highlight the taxonomic value of premolar EDJ morphology in hominin species. Copyright © 2016 Elsevier Ltd. All rights reserved.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, M. P.; US Naval Research Laboratory, Washington, DC 20375; Yakes, M. K.

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interfacemore » is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.« less

Electromagnetic scattering from two-dimensional thick material junctions

NASA Technical Reports Server (NTRS)

Ricoy, M. A.; Volakis, John L.

1990-01-01

The problem of the plane wave diffraction is examined by an arbitrary symmetric two dimensional junction, where Generalized Impedance Boundary Conditions (GIBCs) and Generalized Sheet Transition Conditions (GSTCs) are employed to simulate the slabs. GIBCs and GSTCs are constructed for multilayer planar slabs of arbitrary thickness and the resulting GIBC/GSTC reflection coefficients are compared with exact counterparts to evaluate the GIBCs/GSTCs. The plane wave diffraction by a multilayer material slab recessed in a perfectly conducting ground plane is formulated and solved via the Generalized Scattering Matrix Formulation (GDMF) in conjunction with the dual integral equation approach. Various scattering patterns are computed and validated with exact results where possible. The diffraction by a material discontinuity in a thick dielectric/ferrite slab is considered by modelling the constituent slabs with GSTCs. A non-unique solution in terms of unknown constants is obtained, and these constants are evaluated for the recessed slab geometry by comparison with the solution obtained therein. Several other simplified cases are also presented and discussed. An eigenfunction expansion method is introduced to determine the unknown solution constants in the general case. This procedure is applied to the non-unique solution in terms of unknown constants; and scattering patterns are presented for various slab junctions and compared with alternative results where possible.

Uterine Junctional Zone Thickness, Cervical Length and Bioelectrical Impedance Analysis of Body Composition in Women with Endometriosis

PubMed Central

Ayas, Selçuk; Bayraktar, Mesut; Gürbüz, Ayşe; Alkan, Akif; Eren, Sadiye

2012-01-01

Objective: We aimed to evaluate uterine junctional zone thickness, cervical length and bioelectrical impedance analysis of body composition in women with endometriosis. Material and Methods: This is a prospective study conducted in a tertiary teaching hospital. A total of 73 patients were included in the study. Endometriosis was surgically diagnosed in 36 patients (study group). The control group included 37 patients. Main outcome measure(s): Bioelectrical impedance analysis was used to measure body composition. Uterine junctional zone thickness and cervical length were measured by transvaginal ultrasonography. Results: Patients’ characteristics (age, gravida, parity, live baby, age of menarche, lengths of menstrual cycle, percentage of patients with dysmenorrhea, positive family history), body mass index (BMI) (kg/m2), amount of body fat (kg), percentage of body fat were not statistically different between the two groups (p>0.05). The length of menstruation and cervical length were longer in women with endometriosis. Similarly, the inner myometrium was thicker in women with endometriosis than the control group. Conclusion: The relation between endometriosis and demographic features such as age, gravida, parity, gravida, BMI, lengths of the menstrual cycle, age of menarche are controversial. Longer cervical length and thicker inner myometrial layer may be important in the etiopathogenesis of endometriosis. PMID:25207044

Ge p-channel tunneling FETs with steep phosphorus profile source junctions

NASA Astrophysics Data System (ADS)

Takaguchi, Ryotaro; Matsumura, Ryo; Katoh, Takumi; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

The solid-phase diffusion processes of three n-type dopants, i.e., phosphorus (P), arsenic (As), and antimony (Sb), from spin-on-glass (SOG) into Ge are compared. We show that P diffusion can realize both the highest impurity concentration (˜7 × 1019 cm-3) and the steepest impurity profile (˜10 nm/dec) among the cases of the three n-type dopants because the diffusion coefficient is strongly dependent on the dopant concentration. As a result, we can conclude that P is the most suitable dopant for the source formation of Ge p-channel TFETs. Using this P diffusion, we fabricate Ge p-channel TFETs with high-P-concentration and steep-P-profile source junctions and demonstrate their operation. A high ON current of ˜1.7 µA/µm is obtained at room temperature. However, the subthreshold swing and ON current/OFF current ratio are degraded by any generation-recombination-related current component. At 150 K, SSmin of ˜108 mV/dec and ON/OFF ratio of ˜3.5 × 105 are obtained.

General solution for diffusion-controlled dissolution of spherical particles. 1. Theory.

PubMed

Wang, J; Flanagan, D R

1999-07-01

Three classical particle dissolution rate expressions are commonly used to interpret particle dissolution rate phenomena. Our analysis shows that an assumption used in the derivation of the traditional cube-root law may not be accurate under all conditions for diffusion-controlled particle dissolution. Mathematical analysis shows that the three classical particle dissolution rate expressions are approximate solutions to a general diffusion layer model. The cube-root law is most appropriate when particle size is much larger than the diffusion layer thickness, the two-thirds-root expression applies when the particle size is much smaller than the diffusion layer thickness. The square-root expression is intermediate between these two models. A general solution to the diffusion layer model for monodispersed spherical particles dissolution was derived for sink and nonsink conditions. Constant diffusion layer thickness was assumed in the derivation. Simulated dissolution data showed that the ratio between particle size and diffusion layer thickness (a0/h) is an important factor in controlling the shape of particle dissolution profiles. A new semiempirical general particle dissolution equation is also discussed which encompasses the three classical particle dissolution expressions. The success of the general equation in explaining limitations of traditional particle dissolution expressions demonstrates the usefulness of the general diffusion layer model.

Transverse junction vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Schaus, C. F.; Torres, A. J.; Cheng, Julian; Sun, S.; Hains, C.

1991-04-01

An all-epitaxial, transverse-junction GaAs/AlGaAs vertical-cavity surface-emitting laser (TJ-VCSEL) incorporating wavelength-resonant periodic gain is reported. Metalorganic chemical vapor deposition is used for epitaxial growth of a structure containing five GaAs quantum wells. The simple p(+)-p-n(+) transverse junction is fabricated using reactive ion etching and diffusion techniques. Contacts are situated on the wafer surface resulting in a nearly planar structure. The device exhibits a room-temperature threshold of 48 mA (pulsed) and a resolution-limited spectral width of 0.11 nm at an 855.8-nm lasing wavelength.

Nanoscale patterning controls inorganic-membrane interface structure

NASA Astrophysics Data System (ADS)

Almquist, Benjamin D.; Verma, Piyush; Cai, Wei; Melosh, Nicholas A.

2011-02-01

The ability to non-destructively integrate inorganic structures into or through biological membranes is essential to realizing full bio-inorganic integration, including arrayed on-chip patch-clamps, drug delivery, and biosensors. Here we explore the role of nanoscale patterning on the strength of biomembrane-inorganic interfaces. AFM measurements show that inorganic probes functionalized with hydrophobic bands with thicknesses complimentary to the hydrophobic lipid bilayer core exhibit strong attachment in the bilayer. As hydrophobic band thickness increases to 2-3 times the bilayer core the interfacial strength decreases, comparable to homogeneously hydrophobic probes. Analytical calculations and molecular dynamics simulations predict a transition between a `fused' interface and a `T-junction' that matches the experimental results, showing lipid disorder and defect formation for thicker bands. These results show that matching biological length scales leads to more intimate bio-inorganic junctions, enabling rational design of non-destructive membrane interfaces.The ability to non-destructively integrate inorganic structures into or through biological membranes is essential to realizing full bio-inorganic integration, including arrayed on-chip patch-clamps, drug delivery, and biosensors. Here we explore the role of nanoscale patterning on the strength of biomembrane-inorganic interfaces. AFM measurements show that inorganic probes functionalized with hydrophobic bands with thicknesses complimentary to the hydrophobic lipid bilayer core exhibit strong attachment in the bilayer. As hydrophobic band thickness increases to 2-3 times the bilayer core the interfacial strength decreases, comparable to homogeneously hydrophobic probes. Analytical calculations and molecular dynamics simulations predict a transition between a `fused' interface and a `T-junction' that matches the experimental results, showing lipid disorder and defect formation for thicker bands. These results show that matching biological length scales leads to more intimate bio-inorganic junctions, enabling rational design of non-destructive membrane interfaces. Electronic supplementary information (ESI) available: Breakthrough rate as a function of force plots for 5 nm, 10 nm and ∞-probes.. See DOI: 10.1039/c0nr00486c

Fluoride barriers in Nb/Pb Josephson junctions

NASA Astrophysics Data System (ADS)

Asano, H.; Tanabe, K.; Michikami, O.; Igarashi, M.; Beasley, M. R.

1985-03-01

Josephson tunnel junctions are fabricated using a new class of artificial barriers, metal fluorides (Al fluoride and Zr fluoride). These fluoride barriers are deposited on the surface of a Nb base electrode, which are previously cleaned using a CF4 cleaning process, and covered by a Pb counterelectrode. The junctions with both Al fluoride and Zr fluoride barriers exhibit good tunneling characteristics and have low specific capacitance. In the case of Zr fluoride, it is observed that reasonable resistances are obtained even at thickness greater than 100 A. This phenomenon might be explained by tunneling via localized states in Zr fluoride.

Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsu, William, E-mail: william.hsu@utexas.edu; Kim, Taegon; Chou, Harry

2016-07-07

Although the diffusion control and dopant activation of Ge p-type junctions are straightforward when using B{sup +} implantation, the use of the heavier BF{sub 2}{sup +} ions or even BF{sup +} is still favored in terms of shallow junction formation and throughput—because implants can be done at higher energies, which can give higher beam currents and beam stability—and thus the understanding of the effect of F co-doping becomes important. In this work, we have investigated diffusion and end-of-range (EOR) defect formation for B{sup +}, BF{sup +}, and BF{sub 2}{sup +} implants in crystalline and pre-amorphized Ge, employing rapid thermal annealingmore » at 600 °C and 800 °C for 10 s. It is demonstrated that the diffusion of B is strongly influenced by the temperature, the presence of F, and the depth of amorphous/crystalline interface. The B and F diffusion profiles suggest the formation of B–F complexes and enhanced diffusion by interaction with point defects. In addition, the strong chemical effect of F is found only for B in Ge, while such an effect is vanishingly small for samples implanted with F alone, or co-implanted with P and F, as evidenced by the high residual F concentration in the B-doped samples after annealing. After 600 °C annealing for 10 s, interstitial-induced compressive strain was still observed in the EOR region for the sample implanted with BF{sup +}, as measured by X-ray diffraction. Further analysis by cross-sectional transmission electron microscopy showed that the {311} interstitial clusters are the majority type of EOR defects. The impact of these {311} defects on the electrical performance of Ge p{sup +}/n junctions formed by BF{sup +} implantation was evaluated.« less

Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

1983-01-01

High risk, high payoff research areas associated with the Westinghouse process for producing photovoltaic modules using non- CZ sheet material were investigated. All work was performed using dendritic web silicon. The following tasks are discussed and associated technical results are given: (1) determining the technical feasibility of forming front and back junctions in non-CT silicon using dopant techniques; (2) determining the feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask; (3) determining the feasibility of applying liquid anti-reflective solutions using meniscus coating equipment; (4) studying the production of uniform, high efficiency solar cells using ion implanation junction formation techniques; and (5) quantifying cost improvements associated with process improvements.

Investigation of Proposed Process Sequence for the Array Automated Assembly Task, Phase 2. [low cost silicon solar array fabrication

NASA Technical Reports Server (NTRS)

Mardesich, N.; Garcia, A.; Bunyan, S.; Pepe, A.

1979-01-01

The technological readiness of the proposed process sequence was reviewed. Process steps evaluated include: (1) plasma etching to establish a standard surface; (2) forming junctions by diffusion from an N-type polymeric spray-on source; (3) forming a p+ back contact by firing a screen printed aluminum paste; (4) forming screen printed front contacts after cleaning the back aluminum and removing the diffusion oxide; (5) cleaning the junction by a laser scribe operation; (6) forming an antireflection coating by baking a polymeric spray-on film; (7) ultrasonically tin padding the cells; and (8) assembling cell strings into solar circuits using ethylene vinyl acetate as an encapsulant and laminating medium.

Phosphorus doping a semiconductor particle

DOEpatents

Stevens, G.D.; Reynolds, J.S.

1999-07-20

A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

Phosphorous doping a semiconductor particle

DOEpatents

Stevens, Gary Don; Reynolds, Jeffrey Scott

1999-07-20

A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

Regulation of Endothelial Adherens Junctions by Tyrosine Phosphorylation

PubMed Central

Adam, Alejandro Pablo

2015-01-01

Endothelial cells form a semipermeable, regulated barrier that limits the passage of fluid, small molecules, and leukocytes between the bloodstream and the surrounding tissues. The adherens junction, a major mechanism of intercellular adhesion, is comprised of transmembrane cadherins forming homotypic interactions between adjacent cells and associated cytoplasmic catenins linking the cadherins to the cytoskeleton. Inflammatory conditions promote the disassembly of the adherens junction and a loss of intercellular adhesion, creating openings or gaps in the endothelium through which small molecules diffuse and leukocytes transmigrate. Tyrosine kinase signaling has emerged as a central regulator of the inflammatory response, partly through direct phosphorylation and dephosphorylation of the adherens junction components. This review discusses the findings that support and those that argue against a direct effect of cadherin and catenin phosphorylation in the disassembly of the adherens junction. Recent findings indicate a complex interaction between kinases, phosphatases, and the adherens junction components that allow a fine regulation of the endothelial permeability to small molecules, leukocyte migration, and barrier resealing. PMID:26556953

32-element beta detector developed at the Institute of Electron Technology (ITE)

NASA Astrophysics Data System (ADS)

Wegrzecki, Maciej; Yakushev, Alexander; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kłos, Helena; Panas, Andrzej; Słysz, Wojciech; Stolarski, Maciej; Szmigiel, Dariusz; Wegrzecka, Iwona; Zaborowski, Michał

2014-08-01

The paper presents the design, technology and parameters of a new .silicon detector for detection of electrons (below named as beta detector) developed at the Institute of Electron Technology (ITE). The detector will be used for research on transactinide elements at the GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (GSI). The detector consists of a monolithic 32-element array with an active area diameter of 90 mm and a thickness of 0.9 mm. The starting material is a high-resistivity ν silicon wafer (5 kΩcm resistivity). 32 planar p+-ν junctions are formed by boron diffusion on the top side of the wafer. On the bottom side, an n+ region, which forms a common cathode, is formed on the entire surface by phosphorus diffusion. The array is mounted on a special epoxy-glass laminate substrate, copper-clad on both sides. Two model detectors have been fabricated and studied. Very good electrical parameters have been achieved. For the first array, with supply voltage VR = 20 V, the minimum dark current was 8 nA, the maximum dark current 97.1 nA, and the average dark current 25.1 nA. For the second array, it was 11.5 nA, 378.8 nA and 40.0 nA respectively.

Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes

NASA Astrophysics Data System (ADS)

Maekura, T.; Tanaka, K.; Motoyama, C.; Yoneda, R.; Yamamoto, K.; Nakashima, H.; Wang, D.

2017-10-01

The direct band gap electroluminescence (EL) intensity was investigated for asymmetric metal/Ge/metal diodes fabricated on n-type Ge with doping levels in the range of 4.0 × 1013-3.1 × 1018 cm-3. Up to a doping level of 1016 cm-3 order, commercially available (100) n-Ge substrates were used. To obtain a doping level higher than 1017 cm-3 order, which is commercially unavailable, n+-Ge/p-Ge structures were fabricated by Sb doping on p-type (100) Ge substrates with an in-diffusion at 600 °C followed by a push-diffusion at 700 °C-850 °C. The EL intensity was increased with increasing doping level up to 1.0 × 1018 cm-3. After that, it was decreased with a further increase in n-type doping level. This EL intensity decrease is explained by the decreased number of holes in the active region. One reason is the difficulty in hole injection through the PtGe/n-Ge contact due to the occurring of tunneling electron current. Another reason is the loss of holes caused by both the small thickness of n+-Ge layer and the existence of n+p junction.

A Phase I/II Study of Oblimersen Plus Cisplatin and Fluorouracil in Gastric & Esophageal Junction Cancer

ClinicalTrials.gov

2015-06-10

Adenocarcinoma of the Esophagus; Adenocarcinoma of the Gastroesophageal Junction; Diffuse Adenocarcinoma of the Stomach; Intestinal Adenocarcinoma of the Stomach; Mixed Adenocarcinoma of the Stomach; Recurrent Esophageal Cancer; Recurrent Gastric Cancer; Squamous Cell Carcinoma of the Esophagus; Stage III Esophageal Cancer; Stage IIIA Gastric Cancer; Stage IIIB Gastric Cancer; Stage IIIC Gastric Cancer; Stage IV Esophageal Cancer; Stage IV Gastric Cancer

Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chae, Kyo-Suk; Samsung Electronics Co., Ltd., San #16 Banwol-dong, Hwasung-City, Gyeonggi-Do 445-701; Shim, Tae-Hun

We investigated the Ru spacer-thickness effect on the anti-ferro-magnetic coupling strength (J{sub ex}) of a [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer fabricated with Co{sub 2}Fe{sub 6}B{sub 2}/MgO based perpendicular-magnetic-tunneling-junction spin-valves on 12-in. TiN electrode wafers. J{sub ex} peaked at a certain Ru spacer-thickness: specifically, a J{sub ex} of 0.78 erg/cm{sup 2} at 0.6 nm, satisfying the J{sub ex} criteria for realizing the mass production of terra-bit-level perpendicular-spin-transfer-torque magnetic-random-access-memory. Otherwise, J{sub ex} rapidly degraded when the Ru spacer-thickness was less than or higher than 0.6 nm. As a result, the allowable Ru thickness variation should be controlled less than 0.12 nm to satisfy the J{sub ex} criteria. However,more » the Ru spacer-thickness did not influence the tunneling-magneto-resistance (TMR) and resistance-area (RA) of the perpendicular-magnetic-tunneling-junction (p-MTJ) spin-valves since the Ru spacer in the synthetic-anti-ferro-magnetic layer mainly affects the anti-ferro-magnetic coupling efficiency rather than the crystalline linearity of the Co{sub 2}Fe{sub 6}B{sub 2} free layer/MgO tunneling barrier/Co{sub 2}Fe{sub 6}B{sub 2} pinned layer, although Co{sub 2}Fe{sub 6}B{sub 2}/MgO based p-MTJ spin-valves ex-situ annealed at 275 °C achieved a TMR of ∼70% at a RA of ∼20 Ω μm{sup 2}.« less

Thickness-, Composition-, and Magnetic-Field-Dependent Complex Impedance Spectroscopy of Granular-Type-Barrier Co/Co-Al2O3/Co MTJs

NASA Astrophysics Data System (ADS)

Tuan, Nguyen Anh; Anh, Nguyen Tuan; Nga, Nguyen Tuyet; Tue, Nguyen Anh; Van Cuong, Giap

2016-06-01

The alternating-current (ac) electrical properties of granular-type-barrier magnetic tunnel junctions (GBMTJs) based on Co/Co x (Al2O3)1- x ( t)/Co trilayer structures have been studied using complex impedance spectroscopy (CIS). Their CIS characteristics were investigated in external magnetic fields varying from 0 kOe to 3 kOe as a function of Co composition x at 10 at.%, 25 at.%, and 35 at.%, with barrier layer thickness t of 20 nm to 90 nm. The influence of these factors on the behaviors of the ac impedance response of the GBMTJs was deeply investigated and attributed to the dielectric or conducting nature of the Co-Al2O3 barrier layer. The most remarkable typical phenomena observed in these behaviors, even appearing paradoxical, include lower impedance for thicker t for each given x, a declining trend of Z with increasing x, a clear decrease of Z with H, and especially a partition of Z into zones according to the H value. All these effects are analyzed and discussed to demonstrate that diffusion-type and mass-transfer-type phenomena can be inferred from processes such as spin tunneling and Coulomb or spin blockade in the Co-Al2O3 barrier layer.

The tight junction protein ZO-1 and an interacting transcription factor regulate ErbB-2 expression

PubMed Central

Balda, Maria S.; Matter, Karl

2000-01-01

Epithelial tight junctions regulate paracellular diffusion and restrict the intermixing of apical and basolateral plasma membrane components. We now identify a Y-box transcription factor, ZONAB (ZO-1-associated nucleic acid-binding protein), that binds to the SH3 domain of ZO-1, a submembrane protein of tight junctions. ZONAB localizes to the nucleus and at tight junctions, and binds to sequences of specific promoters containing an inverted CCAAT box. In reporter assays, ZONAB and ZO-1 functionally interact in the regulation of the ErbB-2 promoter in a cell density-dependent manner. In stably transfected overexpressing cells, ZO-1 and ZONAB control expression of endogenous ErbB-2 and function in the regulation of paracellular permeability. These data indicate that tight junctions directly participate in the control of gene expression and suggest that they function in the regulation of epithelial cell differentiation. PMID:10790369

Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Weicheng; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083; Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn

2014-11-10

In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixedmore » conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.« less

Innexin gap junctions in nerve cells coordinate spontaneous contractile behavior in Hydra polyps

NASA Astrophysics Data System (ADS)

Takaku, Yasuharu; Hwang, Jung Shan; Wolf, Alexander; Böttger, Angelika; Shimizu, Hiroshi; David, Charles N.; Gojobori, Takashi

2014-01-01

Nerve cells and spontaneous coordinated behavior first appeared near the base of animal evolution in the common ancestor of cnidarians and bilaterians. Experiments on the cnidarian Hydra have demonstrated that nerve cells are essential for this behavior, although nerve cells in Hydra are organized in a diffuse network and do not form ganglia. Here we show that the gap junction protein innexin-2 is expressed in a small group of nerve cells in the lower body column of Hydra and that an anti-innexin-2 antibody binds to gap junctions in the same region. Treatment of live animals with innexin-2 antibody eliminates gap junction staining and reduces spontaneous body column contractions. We conclude that a small subset of nerve cells, connected by gap junctions and capable of synchronous firing, act as a pacemaker to coordinate the contraction of the body column in the absence of ganglia.

Innexin gap junctions in nerve cells coordinate spontaneous contractile behavior in Hydra polyps

PubMed Central

Takaku, Yasuharu; Hwang, Jung Shan; Wolf, Alexander; Böttger, Angelika; Shimizu, Hiroshi; David, Charles N.; Gojobori, Takashi

2014-01-01

Nerve cells and spontaneous coordinated behavior first appeared near the base of animal evolution in the common ancestor of cnidarians and bilaterians. Experiments on the cnidarian Hydra have demonstrated that nerve cells are essential for this behavior, although nerve cells in Hydra are organized in a diffuse network and do not form ganglia. Here we show that the gap junction protein innexin-2 is expressed in a small group of nerve cells in the lower body column of Hydra and that an anti-innexin-2 antibody binds to gap junctions in the same region. Treatment of live animals with innexin-2 antibody eliminates gap junction staining and reduces spontaneous body column contractions. We conclude that a small subset of nerve cells, connected by gap junctions and capable of synchronous firing, act as a pacemaker to coordinate the contraction of the body column in the absence of ganglia. PMID:24394722

Innexin gap junctions in nerve cells coordinate spontaneous contractile behavior in Hydra polyps.

PubMed

Takaku, Yasuharu; Hwang, Jung Shan; Wolf, Alexander; Böttger, Angelika; Shimizu, Hiroshi; David, Charles N; Gojobori, Takashi

2014-01-07

Nerve cells and spontaneous coordinated behavior first appeared near the base of animal evolution in the common ancestor of cnidarians and bilaterians. Experiments on the cnidarian Hydra have demonstrated that nerve cells are essential for this behavior, although nerve cells in Hydra are organized in a diffuse network and do not form ganglia. Here we show that the gap junction protein innexin-2 is expressed in a small group of nerve cells in the lower body column of Hydra and that an anti-innexin-2 antibody binds to gap junctions in the same region. Treatment of live animals with innexin-2 antibody eliminates gap junction staining and reduces spontaneous body column contractions. We conclude that a small subset of nerve cells, connected by gap junctions and capable of synchronous firing, act as a pacemaker to coordinate the contraction of the body column in the absence of ganglia.

Two-dimensional non-volatile programmable p-n junctions

NASA Astrophysics Data System (ADS)

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

Two-dimensional non-volatile programmable p-n junctions.

PubMed

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe 2 /hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 10 4 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Fen; Chen, Aixi; Institute for Quantum Computing & Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON N2L 3G1 Canada

Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter barrier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disappears when LiF gets thick enough and recovers its intrinsicmore » properties.« less

Effect of SiN x diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol-gel dip coating and reactive magnetron sputtering.

PubMed

Ghazzal, Mohamed Nawfal; Aubry, Eric; Chaoui, Nouari; Robert, Didier

2015-01-01

We investigate the effect of the thickness of the silicon nitride (SiN x ) diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol-gel) and physical methods (reactive sputtering) are affected differentially by the intercalating SiN x diffusion barrier. Increasing the thickness of the SiN x diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol-gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiN x barrier diffusion. The SiN x barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed.

Interface morphology of Mo/Si multilayer systems with varying Mo layer thickness studied by EUV diffuse scattering.

PubMed

Haase, Anton; Soltwisch, Victor; Braun, Stefan; Laubis, Christian; Scholze, Frank

2017-06-26

We investigate the influence of the Mo-layer thickness on the EUV reflectance of Mo/Si mirrors with a set of unpolished and interface-polished Mo/Si/C multilayer mirrors. The Mo-layer thickness is varied in the range from 1.7 nm to 3.05 nm. We use a novel combination of specular and diffuse intensity measurements to determine the interface roughness throughout the multilayer stack and do not rely on scanning probe measurements at the surface only. The combination of EUV and X-ray reflectivity measurements and near-normal incidence EUV diffuse scattering allows to reconstruct the Mo layer thicknesses and to determine the interface roughness power spectral density. The data analysis is conducted by applying a matrix method for the specular reflection and the distorted-wave Born approximation for diffuse scattering. We introduce the Markov-chain Monte Carlo method into the field in order to determine the respective confidence intervals for all reconstructed parameters. We unambiguously detect a threshold thickness for Mo in both sample sets where the specular reflectance goes through a local minimum correlated with a distinct increase in diffuse scatter. We attribute that to the known appearance of an amorphous-to-crystallization transition at a certain thickness threshold which is altered in our sample system by the polishing.

Threshold thickness for applying diffusion equation in thin tissue optical imaging

NASA Astrophysics Data System (ADS)

Zhang, Yunyao; Zhu, Jingping; Cui, Weiwen; Nie, Wei; Li, Jie; Xu, Zhenghong

2014-08-01

We investigated the suitability of the semi-infinite model of the diffusion equation when using diffuse optical imaging (DOI) to image thin tissues with double boundaries. Both diffuse approximation and Monte Carlo methods were applied to simulate light propagation in the thin tissue model with variable optical parameters and tissue thicknesses. A threshold value of the tissue thickness was defined as the minimum thickness in which the semi-infinite model exhibits the same reflected intensity as that from the double-boundary model and was generated as the final result. In contrast to our initial hypothesis that all optical properties would affect the threshold thickness, our results show that only absorption coefficient is the dominant parameter and the others are negligible. The threshold thickness decreases from 1 cm to 4 mm as the absorption coefficient grows from 0.01 mm-1 to 0.2 mm-1. A look-up curve was derived to guide the selection of the appropriate model during the optical diagnosis of thin tissue cancers. These results are useful in guiding the development of the endoscopic DOI for esophageal, cervical and colorectal cancers, among others.

Intercellular signaling via cyclic GMP diffusion through gap junctions restarts meiosis in mouse ovarian follicles.

PubMed

Shuhaibar, Leia C; Egbert, Jeremy R; Norris, Rachael P; Lampe, Paul D; Nikolaev, Viacheslav O; Thunemann, Martin; Wen, Lai; Feil, Robert; Jaffe, Laurinda A

2015-04-28

Meiosis in mammalian oocytes is paused until luteinizing hormone (LH) activates receptors in the mural granulosa cells of the ovarian follicle. Prior work has established the central role of cyclic GMP (cGMP) from the granulosa cells in maintaining meiotic arrest, but it is not clear how binding of LH to receptors that are located up to 10 cell layers away from the oocyte lowers oocyte cGMP and restarts meiosis. Here, by visualizing intercellular trafficking of cGMP in real-time in live follicles from mice expressing a FRET sensor, we show that diffusion of cGMP through gap junctions is responsible not only for maintaining meiotic arrest, but also for rapid transmission of the signal that reinitiates meiosis from the follicle surface to the oocyte. Before LH exposure, the cGMP concentration throughout the follicle is at a uniformly high level of ∼2-4 μM. Then, within 1 min of LH application, cGMP begins to decrease in the peripheral granulosa cells. As a consequence, cGMP from the oocyte diffuses into the sink provided by the large granulosa cell volume, such that by 20 min the cGMP concentration in the follicle is uniformly low, ∼100 nM. The decrease in cGMP in the oocyte relieves the inhibition of the meiotic cell cycle. This direct demonstration that a physiological signal initiated by a stimulus in one region of an intact tissue can travel across many layers of cells via cyclic nucleotide diffusion through gap junctions could provide a general mechanism for diverse cellular processes.

Process research of non-Czochralski silicon material

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1986-01-01

Simultaneous diffusion of liquid precursors containing phosphorus and boron into dendritic web silicon to form solar cell structures was investigated. A simultaneous junction formation techniques was developed. It was determined that to produce high quality cells, an annealing cycle (nominal 800 C for 30 min) should follow the diffusion process to anneal quenched-in defects. Two ohm-cm n-base cells were fabricated with efficiencies greater than 15%. A cost analysis indicated that the simultansous diffusion process costs can be as low as 65% of the costs of the sequential diffusion process.

Choroidal Haller's and Sattler's Layers Thickness in Normal Indian Eyes.

PubMed

Roy, Rupak; Saurabh, Kumar; Vyas, Chinmayi; Deshmukh, Kaustubh; Sharma, Preeti; Chandrasekharan, Dhileesh P; Bansal, Aditya

2018-01-01

This study aims to study normative choroidal thickness (CT) and Haller's and Sattler's layers thickness in normal Indian eyes. The choroidal imaging of 73 eyes of 43 healthy Indian individuals was done using enhanced depth imaging feature of spectralis optical coherence tomography. Rraster scan protocol centered at fovea was used for imaging separately by two observers. CT was defined as the length of the perpendicular line drown from the outer border of hypereflective RPE-Bruch's complex to inner margin of choroidoscleral junction. Choroidal vessel layer thickness was measured after defining a largest choroidal vessel lumen within 750 μ on either side of the subfoveal CT vector. A perpendicular line was drawn to the innermost border of this lumen, and the distance between the perpendicular line and innermost border of choroidoscleral junction gave large choroidal vessel layer thickness (LCVLT, Haller's layer). Medium choroidal vessel layer thickness (MCVLT, Sattler's layer) was measured as the distance between same perpendicular line and outer border of hypereflective RPE-Bruch's complex. The mean age of individuals was 28.23 ± 15.29 years (range 14-59 years). Overall, the mean subfoveal CT was 331.6 ± 63.9 μ. Mean LCVLT was 227.08 ± 51.24 μ and the mean MCVLT was 95.65 ± 23.62 μ. CT was maximum subfoveally with gradual reduction in the thickness as the distance from the fovea increased. This is the first study describing the choroidal sublayer thickness, i.e., Haller's and Sattler's layer thickness along with CT in healthy Indian population.

Choroidal Haller's and Sattler's Layers Thickness in Normal Indian Eyes

PubMed Central

Roy, Rupak; Saurabh, Kumar; Vyas, Chinmayi; Deshmukh, Kaustubh; Sharma, Preeti; Chandrasekharan, Dhileesh P.; Bansal, Aditya

2018-01-01

AIM: This study aims to study normative choroidal thickness (CT) and Haller's and Sattler's layers thickness in normal Indian eyes. MATERIALS AND METHODS: The choroidal imaging of 73 eyes of 43 healthy Indian individuals was done using enhanced depth imaging feature of spectralis optical coherence tomography. Rraster scan protocol centered at fovea was used for imaging separately by two observers. CT was defined as the length of the perpendicular line drown from the outer border of hypereflective RPE-Bruch's complex to inner margin of choroidoscleral junction. Choroidal vessel layer thickness was measured after defining a largest choroidal vessel lumen within 750 μ on either side of the subfoveal CT vector. A perpendicular line was drawn to the innermost border of this lumen, and the distance between the perpendicular line and innermost border of choroidoscleral junction gave large choroidal vessel layer thickness (LCVLT, Haller's layer). Medium choroidal vessel layer thickness (MCVLT, Sattler's layer) was measured as the distance between same perpendicular line and outer border of hypereflective RPE-Bruch's complex. RESULTS: The mean age of individuals was 28.23 ± 15.29 years (range 14–59 years). Overall, the mean subfoveal CT was 331.6 ± 63.9 μ. Mean LCVLT was 227.08 ± 51.24 μ and the mean MCVLT was 95.65 ± 23.62 μ. CT was maximum subfoveally with gradual reduction in the thickness as the distance from the fovea increased. CONCLUSION: This is the first study describing the choroidal sublayer thickness, i.e., Haller's and Sattler's layer thickness along with CT in healthy Indian population. PMID:29899646

Quantitative 3D analysis of bone in hip osteoarthritis using clinical computed tomography.

PubMed

Turmezei, Tom D; Treece, Graham M; Gee, Andrew H; Fotiadou, Anastasia F; Poole, Kenneth E S

2016-07-01

To assess the relationship between proximal femoral cortical bone thickness and radiological hip osteoarthritis using quantitative 3D analysis of clinical computed tomography (CT) data. Image analysis was performed on clinical CT imaging data from 203 female volunteers with a technique called cortical bone mapping (CBM). Colour thickness maps were created for each proximal femur. Statistical parametric mapping was performed to identify statistically significant differences in cortical bone thickness that corresponded with the severity of radiological hip osteoarthritis. Kellgren and Lawrence (K&L) grade, minimum joint space width (JSW) and a novel CT-based osteophyte score were also blindly assessed from the CT data. For each increase in K&L grade, cortical thickness increased by up to 25 % in distinct areas of the superolateral femoral head-neck junction and superior subchondral bone plate. For increasing severity of CT osteophytes, the increase in cortical thickness was more circumferential, involving a wider portion of the head-neck junction, with up to a 7 % increase in cortical thickness per increment in score. Results were not significant for minimum JSW. These findings indicate that quantitative 3D analysis of the proximal femur can identify changes in cortical bone thickness relevant to structural hip osteoarthritis. • CT is being increasingly used to assess bony involvement in osteoarthritis • CBM provides accurate and reliable quantitative analysis of cortical bone thickness • Cortical bone is thicker at the superior femoral head-neck with worse osteoarthritis • Regions of increased thickness co-locate with impingement and osteophyte formation • Quantitative 3D bone analysis could enable clinical disease prediction and therapy development.

A study of the polyethylene membrane used in diffusion chambers for radon gas concentration measurements

NASA Astrophysics Data System (ADS)

Leung, S. Y. Y.; Nikezic, D.; Leung, J. K. C.; Yu, K. N.

2007-10-01

Solid-state nuclear track detectors (SSNTDs) in diffusion chambers have been routinely used for long-term measurements of radon gas concentrations. In usual practice, a filter is added across the top of the diffusion chamber to stop the progeny from entering. Thoron can also be deterred from entering the diffusion chamber by using a polyethylene (PE) membrane. However, the thickness of the PE membrane is rarely specified in the literature. In this paper, we will present our experimental results for a radon exposure that the number of alpha-particle tracks registered by the LR 115 SSNTD in a Karlsruhe diffusion chamber covered with one layer of PE membrane is actually enhanced. This is explained by enhanced deposition of radon progeny on the outside surface of the PE membrane and the insufficient thickness of the PE membrane to stop the alpha particles emitted from these deposited radon progeny to reach the SSNTD. We will present the PE thickness which can stop the alpha particles emitted from the deposited radon or thoron progeny. For the "twin diffusion chambers method", one of the diffusion chambers is covered with PE membranes. The optimal number of thickness of PE membranes will be determined, which allows the largest amount of radon gas to diffuse into the diffusion chamber while at the same time screening out the largest amount of thoron gas.

Development and fabrication of a high current, fast recovery power diode

NASA Technical Reports Server (NTRS)

Berman, A. H.; Balodis, V.; Devance, D. C.; Gaugh, C. E.; Karlsson, E. A.

1983-01-01

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Real-space microscopic electrical imaging of n+-p junction beneath front-side Ag contact of multicrystalline Si solar cells

NASA Astrophysics Data System (ADS)

Jiang, C.-S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

2012-04-01

We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.

Real-Space Microscopic Electrical Imaging of n+-p Junction Beneath Front-Side Ag Contact of Multicrystalline Si Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, C. S.; Li, Z. G.; Moutinho, H. R.

2012-04-15

We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, whichmore » is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.« less

A gallium phosphide high-temperature bipolar junction transistor

NASA Technical Reports Server (NTRS)

Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

1981-01-01

Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

Dopant mapping in thin FIB prepared silicon samples by Off-Axis Electron Holography.

PubMed

Pantzer, Adi; Vakahy, Atsmon; Eliyahou, Zohar; Levi, George; Horvitz, Dror; Kohn, Amit

2014-03-01

Modern semiconductor devices function due to accurate dopant distribution. Off-Axis Electron Holography (OAEH) in the transmission electron microscope (TEM) can map quantitatively the electrostatic potential in semiconductors with high spatial resolution. For the microelectronics industry, ongoing reduction of device dimensions, 3D device geometry, and failure analysis of specific devices require preparation of thin TEM samples, under 70 nm thick, by focused ion beam (FIB). Such thicknesses, which are considerably thinner than the values reported to date in the literature, are challenging due to FIB induced damage and surface depletion effects. Here, we report on preparation of TEM samples of silicon PN junctions in the FIB completed by low-energy (5 keV) ion milling, which reduced amorphization of the silicon to 10nm thick. Additional perpendicular FIB sectioning enabled a direct measurement of the TEM sample thickness in order to determine accurately the crystalline thickness of the sample. Consequently, we find that the low-energy milling also resulted in a negligible thickness of electrically inactive regions, approximately 4nm thick. The influence of TEM sample thickness, FIB induced damage and doping concentrations on the accuracy of the OAEH measurements were examined by comparison to secondary ion mass spectrometry measurements as well as to 1D and 3D simulations of the electrostatic potentials. We conclude that for TEM samples down to 100 nm thick, OAEH measurements of Si-based PN junctions, for the doping levels examined here, resulted in quantitative mapping of potential variations, within ~0.1 V. For thinner TEM samples, down to 20 nm thick, mapping of potential variations is qualitative, due to a reduced accuracy of ~0.3 V. This article is dedicated to the memory of Zohar Eliyahou. Copyright © 2014 Elsevier B.V. All rights reserved.

Defect engineering of the electronic transport through cuprous oxide interlayers

NASA Astrophysics Data System (ADS)

Fadlallah, Mohamed M.; Eckern, Ulrich; Schwingenschlögl, Udo

2016-06-01

The electronic transport through Au-(Cu2O)n-Au junctions is investigated using first-principles calculations and the nonequilibrium Green’s function method. The effect of varying the thickness (i.e., n) is studied as well as that of point defects and anion substitution. For all Cu2O thicknesses the conductance is more enhanced by bulk-like (in contrast to near-interface) defects, with the exception of O vacancies and Cl substitutional defects. A similar transmission behavior results from Cu deficiency and N substitution, as well as from Cl substitution and N interstitials for thick Cu2O junctions. In agreement with recent experimental observations, it is found that N and Cl doping enhances the conductance. A Frenkel defect, i.e., a superposition of an O interstitial and O substitutional defect, leads to a remarkably high conductance. From the analysis of the defect formation energies, Cu vacancies are found to be particularly stable, in agreement with earlier experimental and theoretical work.

Kinetic model for dependence of thin film stress on growth rate, temperature, and microstructure

NASA Astrophysics Data System (ADS)

Chason, E.; Shin, J. W.; Hearne, S. J.; Freund, L. B.

2012-04-01

During deposition, many thin films go through a range of stress states, changing from compressive to tensile and back again. In addition, the stress depends strongly on the processing and material parameters. We have developed a simple analytical model to describe the stress evolution in terms of a kinetic competition between different mechanisms of stress generation and relaxation at the triple junction where the surface and grain boundary intersect. The model describes how the steady state stress scales with the dimensionless parameter D/LR where D is the diffusivity, R is the growth rate, and L is the grain size. It also explains the transition from tensile to compressive stress as the microstructure evolves from isolated islands to a continuous film. We compare calculations from the model with measurements of the stress dependence on grain size and growth rate in the steady state regime and of the evolution of stress with thickness for different temperatures.

Functional assessment of gap junctions in monolayer and three-dimensional cultures of human tendon cells using fluorescence recovery after photobleaching

PubMed Central

Kuzma-Kuzniarska, Maria; Yapp, Clarence; Pearson-Jones, Thomas W.; Jones, Andrew K.; Hulley, Philippa A.

2014-01-01

Abstract. Gap junction-mediated intercellular communication influences a variety of cellular activities. In tendons, gap junctions modulate collagen production, are involved in strain-induced cell death, and are involved in the response to mechanical stimulation. The aim of the present study was to investigate gap junction-mediated intercellular communication in healthy human tendon-derived cells using fluorescence recovery after photobleaching (FRAP). The FRAP is a noninvasive technique that allows quantitative measurement of gap junction function in living cells. It is based on diffusion-dependent redistribution of a gap junction-permeable fluorescent dye. Using FRAP, we showed that human tenocytes form functional gap junctions in monolayer and three-dimensional (3-D) collagen I culture. Fluorescently labeled tenocytes following photobleaching rapidly reacquired the fluorescent dye from neighboring cells, while HeLa cells, which do not communicate by gap junctions, remained bleached. Furthermore, both 18 β-glycyrrhetinic acid and carbenoxolone, standard inhibitors of gap junction activity, impaired fluorescence recovery in tendon cells. In both monolayer and 3-D cultures, intercellular communication in isolated cells was significantly decreased when compared with cells forming many cell-to-cell contacts. In this study, we used FRAP as a tool to quantify and experimentally manipulate the function of gap junctions in human tenocytes in both two-dimensional (2-D) and 3-D cultures. PMID:24390370

Ultra-Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION registered Followed by Laser Thermal Processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torregrosa, Frank; Etienne, Hasnaa; Sempere, Guillaume

In order to achieve the requirements for P+/N junctions for <45 nm ITRS nodes, ultra low energy and high dose implantations are needed. Classical beamline implantation is now limited in low energies, compared to Plasma Immersion Ion Implantation (PIII) which efficiency is no more to prove for the realization of Ultra-Shallow Junctions (USJ) in semiconductor applications : this technique allows to get ultimate shallow profiles (as implanted) due to no lower limitation of energy and high dose rate. Electrical activation is also a big issue since it has to afford high electrical activation rate with very low diffusion. Laser annealingmore » is one of the candidates for the 45 nm node. This paper presents electrical and physico-chemical characterizations of junctions realized with BF3 PIII followed by laser thermal processing with aim to obtain ultra-shallow junctions. Different implantation conditions (acceleration voltage/dose) and laser conditions (laser types, fluence/number of shots) are used for this study. Pre-amorphization is also used to confine the junction depth, and is shown to have a positive effect on junction depth but leads in higher junction leakage due to the remaining of EOR defects. The characterization is done using Optical characterization tool (SEMILAB) for sheet resistance and junction leakage measurements. SIMS is used for Boron profile and junction depth.« less

Electromagnetic properties of thin-film transformer-coupled superconducting tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Finnegan, T.F.; Lacquaniti, V.; Vaglio, R.

1981-09-01

Multisection superconducting microstrip transformers with designed output impedances below 0.1 ..cap omega.. have been fabricated via precise photolithographic techniques to investigate the electromagnetic properties of Nb-Nb oxide-Pb tunnel junctions. The low-impedance transformer sections incorporate a rf sputtered thin-film Ta-oxide dielectric, and the reproducible external coupling achievable with this type of geometry makes possible the systematic investigation of electromagnetic device parameters as a function of tunneling oxide thickness.

Role of interface layers on Tunneling Magnetoresistance

NASA Astrophysics Data System (ADS)

Yang, See-Hun; Samant, Mahesh; Parkin, Stuart S. P.

2002-03-01

Thin non-magnetic metallic layers inserted at the interface between tunneling barriers and the ferromagnetic electrodes in magnetic tunnel junctions quenches the magnetoresistance (TMR) exhibited by some structures[1]. Studies have been carried out on exchange biased magnetic tunnel junction structures in which one of the ferromagnetic electrodes is pinned by coupling to IrMn or PtMn antiferromagnetic layers. For metallic aluminum interface layers thicknesses of just a few angstrom completely suppress the TMR although this characteristic thickness depends on the roughness of the tunneling barrier. A variety of structures will be discussed in which a number of interface layers have been introduced. In particular results for insertion of Cu, Ru and Cr layers on either side of the tunnel barrier will be presented. A number of techniques including XANES, XMCD and high resolution cross-section transmission electron microscopy have been used to study the structure and morphology of the interface layers and to correlate the structure of these layers with the magneto-transport properties of the tunneling junctions. [1] S.S.P. Parkin, US patent 5,764,567 issued by the United States Patent and Trademark Office, June 9, 1998.

Diffusion length measurements using the scanning electron microscope. [in semiconductor devices

NASA Technical Reports Server (NTRS)

Weizer, V. G.

1975-01-01

A measurement technique employing the scanning electron microscope is described in which values of the true bulk diffusion length are obtained. It is shown that surface recombination effects can be eliminated through the application of highly doped surface field layers. The influence of high injection level effects and low-high junction current generation on the resulting measurement was investigated. Close agreement is found between the diffusion lengths measured by this method and those obtained using a penetrating radiation technique.

Perpendicular magnetic tunnel junctions with Mn-modified ultrathin MnGa layer

NASA Astrophysics Data System (ADS)

Suzuki, K. Z.; Miura, Y.; Ranjbar, R.; Bainsla, L.; Ono, A.; Sasaki, Y.; Mizukami, S.

2018-02-01

Perpendicular magnetic tunnel junctions (p-MTJs) with a MgO barrier and a 1-nm-thick MnGa electrode were investigated by inserting several monolayers (MLs) of Mn. The tunnel magnetoresistance (TMR) ratio systematically increased when increasing the Mn layer thickness with a maximum of 18 (38.4)% at 300 (5) K for a Mn layer thickness of 0.6-0.8 nm. This ratio is five times higher compared to that without the Mn layer. The perpendicular magnetic anisotropy (PMA) field and the PMA constant of the ultrathin MnGa layer also increased up to 62-90 kOe and 6.2-11.3 Merg/cm3, respectively, with an increase in the Mn interlayer thickness, even for the ultrathin regime of the MnGa layer. For p-MTJs showing a high TMR and PMA, electron microscopy indicated the presence of 3-4 MLs of Mn at the MnGa/MgO interface; thus, the Mn modification enhanced the TMR as well as improved the PMA. This may be a promising finding to develop a Mn-based free layer for spin-transfer-torque devices for high-recording-density magnetoresistive random access memory and a sub-THz oscillator/detector.

Method and apparatus for reducing sample dispersion in turns and junctions of microchannel systems

DOEpatents

Griffiths, Stewart K.; Nilson, Robert H.

2001-01-01

The performance of microchannel devices is improved by providing turns, wyes, tees, and other junctions that produce little dispersions of a sample as it traverses the turn or junction. The reduced dispersion results from contraction and expansion regions that reduce the cross-sectional area over some portion of the turn or junction. By carefully designing the geometries of these regions, sample dispersion in turns and junctions is reduced to levels comparable to the effects of ordinary diffusion. A numerical algorithm was employed to evolve low-dispersion geometries by computing the electric or pressure field within candidate configurations, sample transport through the turn or junction, and the overall effective dispersion. These devices should greatly increase flexibility in the design of microchannel devices by permitting the use of turns and junctions that do not induce large sample dispersion. In particular, the ability to fold electrophoretic and electrochrornatographic separation columns will allow dramatic improvements in the miniaturization of these devices. The low-lispersion devices are particularly suited to electrochromatographic and electrophoretic separations, as well as pressure-driven chromatographic separation. They are further applicable to microfluidic systems employing either electroosrnotic or pressure-driven flows for sample transport, reaction, mixing, dilution or synthesis.

Elucidating cytochrome C release from mitochondria: insights from an in silico three-dimensional model.

PubMed

Tam, Zhi Yang; Cai, Yi Hui; Gunawan, Rudiyanto

2010-11-17

Mitochondrial regulation of apoptosis depends on the programmed release of proapoptotic proteins such as cytochrome c (Cyt c) through the outer mitochondrial membrane (OMM). Although a few key processes involved in this release have been identified, including the liberation of inner membrane-bound Cyt c and formation of diffusible pores on the OMM, other details like the transport of Cyt c within complex mitochondrial compartments, e.g., the cristae and crista junctions, are not yet fully understood (to our knowledge). In particular, a remodeling of the inner mitochondrial membrane accompanying apoptosis seen in a few studies, in which crista junctions widen, has been hypothesized to be a necessary step in the Cyt c release. Using a three-dimensional spatial modeling of mitochondrial crista and the crista junction, model simulations and analysis illustrated how the interplay among solubilization of Cyt c, fast diffusion of Cyt c, and OMM permeabilization gives rise to the observed experimental release profile. Importantly, the widening of the crista junction was found to have a negligible effect on the transport of free Cyt c from cristae. Finally, model simulations showed that increasing the fraction of free/loosely-bound Cyt c can sensitize the cell to apoptotic stimuli in a threshold manner, which may explain increased sensitivity to cell death associated with aging. Copyright © 2010 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Rectifying and photovoltaic properties of the heterojunction composed of CaMnO3 and Nb-doped SrTiO3

NASA Astrophysics Data System (ADS)

Sun, J. R.; Zhang, S. Y.; Shen, B. G.; Wong, H. K.

2005-01-01

A heterojunction composed of CaMnO3 (CMO) and Nb-doped SrTiO3 (STON) was fabricated and its properties were studied and compared with La0.67Ca0.33MnO3/STON and LaMnO3+δ/STON p-n, junctions. This CMO/STON junction exhibits an asymmetric current-voltage relation similar to a p-n junction. The most remarkable discovery is that the magnetic state of the manganites has a strong impact on the rectifying behaviors. The diffusion voltage, which is the critical voltage for the current rush, shows a tendency to decrease/increase with the establishment of the antiferromagnetic/ferromagnetic order in the manganites of the junction. Similar to other manganite p-n junctions, CMO/STON also exhibits a significant photovoltaic effect, and the maximum photovoltage is ˜2.2mV under the illumination of ˜7mW light (λ=460nm). A qualitative explanation is given based on an analysis on the band diagram of the junctions.

The Corneal Epithelial Barrier and Its Developmental Role in Isolating Corneal Epithelial and Conjunctival Cells From One Another

PubMed Central

Kubilus, James K.; Zapater i Morales, Carolina; Linsenmayer, Thomas F.

2017-01-01

Purpose During development, the corneal epithelium (CE) and the conjunctiva are derived from the surface ectoderm. Here we have examined how, during development, the cells of these two issues become isolated from each other. Methods Epithelia from the anterior eyes of chicken embryos were labeled with the fluorescent, lipophilic dye, 1,1′-dioctadecyl-3,3,3′,3′-tetramethylindocarbocyanine perchlorate (DiI). DiI was placed on the epithelial surface of the developing anterior eye and its diffusion was monitored by fluorescence microscopy. Concomitant morphologic changes in the surface cells of these epithelial were examined by scanning electron microscopy. Immunofluorescence was used to analyze the expression of cytokeratin K3, ZO-1, N-cadherin and Connexin-43 and the function of gap junctions was analyzed using a cut-loading with the fluorescent dye rhodamine-dextran. Results Prior to embryonic day 8 (E8), DiI placed on the surface of the CE spreads throughout all the epithelial cells of the anterior eye. When older eyes were similarly labeled, dye diffusion was restricted to the CE. Similarly, diffusion of DiI placed on the conjunctival surface after E8 was restricted to the conjunctiva. Scanning electron microscopy showed that developmentally (1) physical separations progressively form between the cells of the CE and those of the conjunctiva, and (2) by E8 these separations form a ring that completely encompasses the cornea. The functional restriction of gap junctions between these tissues did not occur until E14. Conclusions During ocular development, a barrier to the diffusion of DiI forms between the contiguous CE and conjunctiva prior to the differential expression of gap junctions within these tissues. PMID:28319640

Occludin Independently Regulates Permeability under Hydrostatic Pressure and Cell Division in Retinal Pigment Epithelial Cells

PubMed Central

Phillips, Brett E.; Cancel, Limary; Tarbell, John M.; Antonetti, David A.

2008-01-01

Purpose The aim of this study was to determine the function of the tight junction protein occludin in the control of permeability, under diffusive and hydrostatic pressures, and its contribution to the control of cell division in retinal pigment epithelium. Methods Occludin expression was inhibited in the human retinal pigment epithelial cell line ARPE-19 by siRNA. Depletion of occludin was confirmed by Western blot, confocal microscopy, and RT-PCR. Paracellular permeability of cell monolayers to fluorescently labeled 70 kDa dextran, 10 kDa dextran, and 467 Da tetramethylrhodamine (TAMRA) was examined under diffusive conditions or after the application of 10 cm H2O transmural pressure. Cell division rates were determined by tritiated thymidine incorporation and Ki67 immunoreactivity. Cell cycle inhibitors were used to determine whether changes in cell division affected permeability. Results Occludin depletion increased diffusive paracellular permeability to 467 Da TAMRA by 15%, and permeability under hydrostatic pressure was increased 50% compared with control. Conversely, depletion of occludin protein with siRNA did not alter diffusive permeability to 70 kDa and 10 kDa RITC-dextran, and permeability to 70 kDa dextran was twofold lower in occludin-depleted cells under hydrostatic pressure conditions. Occludin depletion also increased thymidine incorporation by 90% and Ki67-positive cells by 50%. Finally, cell cycle inhibitors did not alter the effect of occludin siRNA on paracellular permeability. Conclusions The data suggest that occludin regulates tight junction permeability in response to changes in hydrostatic pressure. Furthermore, these data suggest that occludin also contributes to the control of cell division, demonstrating a novel function for this tight junction protein. PMID:18263810

Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

NASA Technical Reports Server (NTRS)

Walker, G. H.; Conway, E. J.

1978-01-01

Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

Impact of a boron rich layer on minority carrier lifetime degradation in boron spin-on dopant diffused n-type crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Singha, Bandana; Singh Solanki, Chetan

2016-03-01

In the production of n-type crystalline silicon solar cells with boron diffused emitters, the formation of a boron rich layer (BRL) is a common phenomenon and is largely responsible for bulk lifetime degradation. The phenomenon of BRL formation during diffusion of boron spin-on dopant and its impact on bulk lifetime degradation are investigated in this work. The BRL formed beneath the borosilicate glass layer has thicknesses varying from 10 nm-150 nm depending on the diffusion conditions. The effective and bulk minority carrier lifetimes, measured with Al2O3 deposited layers and a quinhydron-methanol solution, show that carrier lifetime degradation is proportional to the BRL thicknesses and their surface recombination velocities. The controlled diffusion processes and different oxidation techniques used in this work can partially reduce the BRL thickness and improve carrier lifetime by more than 10%. But for BRL thicknesses higher than 50 nm, different etching techniques further lower the carrier lifetime and the degradation in the device cannot be recovered.

The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

NASA Astrophysics Data System (ADS)

Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

2016-12-01

Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

Gap junctions mediate large-scale Turing structures in a mean-field cortex driven by subcortical noise

NASA Astrophysics Data System (ADS)

Steyn-Ross, Moira L.; Steyn-Ross, D. A.; Wilson, M. T.; Sleigh, J. W.

2007-07-01

One of the grand puzzles in neuroscience is establishing the link between cognition and the disparate patterns of spontaneous and task-induced brain activity that can be measured clinically using a wide range of detection modalities such as scalp electrodes and imaging tomography. High-level brain function is not a single-neuron property, yet emerges as a cooperative phenomenon of multiply-interacting populations of neurons. Therefore a fruitful modeling approach is to picture the cerebral cortex as a continuum characterized by parameters that have been averaged over a small volume of cortical tissue. Such mean-field cortical models have been used to investigate gross patterns of brain behavior such as anesthesia, the cycles of natural sleep, memory and erasure in slow-wave sleep, and epilepsy. There is persuasive and accumulating evidence that direct gap-junction connections between inhibitory neurons promote synchronous oscillatory behavior both locally and across distances of some centimeters, but, to date, continuum models have ignored gap-junction connectivity. In this paper we employ simple mean-field arguments to derive an expression for D2 , the diffusive coupling strength arising from gap-junction connections between inhibitory neurons. Using recent neurophysiological measurements reported by Fukuda [J. Neurosci. 26, 3434 (2006)], we estimate an upper limit of D2≈0.6cm2 . We apply a linear stability analysis to a standard mean-field cortical model, augmented with gap-junction diffusion, and find this value for the diffusive coupling strength to be close to the critical value required to destabilize the homogeneous steady state. Computer simulations demonstrate that larger values of D2 cause the noise-driven model cortex to spontaneously crystalize into random mazelike Turing structures: centimeter-scale spatial patterns in which regions of high-firing activity are intermixed with regions of low-firing activity. These structures are consistent with the spatial variations in brain activity patterns detected with the BOLD (blood oxygen-level-dependent) signal detected with magnetic resonance imaging, and may provide a natural substrate for synchronous gamma-band rhythms observed across separated EEG (electroencephalogram) electrodes.

Modification of the Near Surface Region Metastable Phases and Ion Induced Reactions

DTIC Science & Technology

1984-02-03

cell Si Dave Lilienfeld - amorphous Si layer thickness Au diffusion in metallic glasses Dave Lilienfeld & - low temperature Cu diffusion in Si Tim...Sullivan Fritz Stafford - defect characterization in implanted & annealed silicon-on-sapphire Peter Zielinski - Composition of CuZr metallic glass...ribbons 5. Prof. Johnson Dave Kuhn - measurement of Pd layer thickness Alexandra Elve - hydrogen profiles in metals Lauren Heitner - hydrogen diffusion in

Osmotic forces and gap junctions in spreading depression: a computational model

NASA Technical Reports Server (NTRS)

Shapiro, B. E.

2001-01-01

In a computational model of spreading depression (SD), ionic movement through a neuronal syncytium of cells connected by gap junctions is described electrodiffusively. Simulations predict that SD will not occur unless cells are allowed to expand in response to osmotic pressure gradients and K+ is allowed to move through gap junctions. SD waves of [K+]out approximately 25 to approximately 60 mM moving at approximately 2 to approximately 18 mm/min are predicted over the range of parametric values reported in gray matter, with extracellular space decreasing up to approximately 50%. Predicted waveform shape is qualitatively similar to laboratory reports. The delayed-rectifier, NMDA, BK, and Na+ currents are predicted to facilitate SD, while SK and A-type K+ currents and glial activity impede SD. These predictions are consonant with recent findings that gap junction poisons block SD and support the theories that cytosolic diffusion via gap junctions and osmotic forces are important mechanisms underlying SD.

Spin injection and detection in lateral spin valves with hybrid interfaces

NASA Astrophysics Data System (ADS)

Wang, Le; Liu, Wenyu; Ying, Hao; Chen, Luchen; Lu, Zhanjie; Han, Shuo; Chen, Shanshan; Zhao, Bing; Xu, Xiaoguang; Jiang, Yong

2018-06-01

Spin injection and detection in lateral spin valves with hybrid interfaces comprising a Co/Ag transparent contact and a Co/MgO/Ag junction (III) are investigated at room temperature in comparison with pure Co/Ag transparent contacts (I) and Co/MgO/Ag junctions (II). The measured spin-accumulation signals of a type III device are five times higher than those for type I. The extracted spin diffusion length in Ag is 180 nm for all three types of devices. The enhancement of the spin signal of the hybrid structure is mainly attributed to the increase of the interfacial spin polarization from the Co/MgO/Ag junction.

Progress research of non-Cz silicon material

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1983-01-01

The simultaneous diffusion of liquid boron and liquid phosphorus dopants into N-type dendritic silicon web for solar cells was investigated. It is planned that the diffusion parameters required to achieve the desired P(+)NN(+) cell structure be determined and the resultant cell properties be compared to cells produced in a sequential differential process. A cost analysis of the simultaneous junction formation process is proposed.

Epitaxial growth of mosaic diamond: Mapping of stress and defects in crystal junction with a confocal Raman spectroscopy

NASA Astrophysics Data System (ADS)

Shu, Guoyang; Dai, Bing; Ralchenko, V. G.; Khomich, A. A.; Ashkinazi, E. E.; Bolshakov, A. P.; Bokova-Sirosh, S. N.; Liu, Kang; Zhao, Jiwen; Han, Jiecai; Zhu, Jiaqi

2017-04-01

We studied defects and stress distributions in mosaic epitaxial diamond film using a confocal Raman spectroscopy, with a special attention to the junction area between the crystals. The mosaics was grown by microwave plasma CVD on closely arranged (1 0 0)-oriented HPHT type Ib substrates. The width of stress affected and defect enriched region around the junction show a tendency of extending with the film thickness, from ≈40 μm on the film-substrate interface to ≈250 μm in the layer 500 μm above the substrate, as found from the mosaics analysis in cross-section. The stress field around the junction demonstrates a complex pattern, with mixed domains of tensile and compressive stress, with maximum value of σ ≈ 0.6 GPa. A similar non-uniform pattern was observed for defect distribution as well. No sign of amorphous sp2 carbon in the junction zone was revealed.

Effect of the Platinum Electroplated Layer Thickness on the Coatings' Microstructure

NASA Astrophysics Data System (ADS)

Zagula-Yavorska, Maryana; Gancarczyk, Kamil; Sieniawski, Jan

2017-03-01

CMSX 4 and Inconel 625 superalloys were coated by platinum layers (3 and 7 μm thick) in the electroplating process. The heat treatment of platinum layers (at 1,050 ˚C for 2 h) was performed to increase platinum adherence to the superalloys substrate. The diffusion zone obtained on CMSX 4 superalloy (3 and 7 μm platinum thick before heat treatment) consisted of two phases: γ-Ni(Al, Cr) and (Al0.25Pt0.75)Ni3. The diffusion zone obtained on Inconel 625 superalloy (3 μm platinum thick before heat treatment) consisted of the α-Pt(Ni, Cr, Al) phase. Moreover, γ-Ni(Cr, Al) phase was identified. The X-ray diffraction (XRD) results revealed the presence of platinum in the diffusion zone of the heat-treated coating (7 μm platinum thick) on Inconel 625 superalloy. The surface roughness parameter Ra of heat-treated coatings increased with the increase of platinum layers thickness. This was due to the unequal mass flow of platinum and nickel.

Electromechanical resistive switching via back-to-back Schottky junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Lijie, E-mail: L.Li@swansea.ac.uk

The physics of the electromechanical resistive switching is uncovered using the theory of back-to-back Schottky junctions combined with the quantum domain space charge transport. A theoretical model of the basic element of resistive switching devices realized by the metal-ZnO nanowires-metal structure has been created and analyzed. Simulation results show that the reverse biased Schottky junction and the air gap impedance dominate the current-voltage relation at higher external voltages; thereby electromechanically varying the air gap thickness causes the device exhibit resistive tuning characteristics. As the device dimension is in nanometre scale, investigation of the model based on quantum mechanics has alsomore » been conducted.« less

Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions.

PubMed

Chandni, U; Watanabe, K; Taniguchi, T; Eisenstein, J P

2015-11-11

We investigate electron tunneling through atomically thin layers of hexagonal boron nitride (hBN). Metal (Cr/Au) and semimetal (graphite) counter-electrodes are employed. While the direct tunneling resistance increases nearly exponentially with barrier thickness as expected, the thicker junctions also exhibit clear signatures of Coulomb blockade, including strong suppression of the tunnel current around zero bias and step-like features in the current at larger biases. The voltage separation of these steps suggests that single-electron charging of nanometer-scale defects in the hBN barrier layer are responsible for these signatures. We find that annealing the metal-hBN-metal junctions removes these defects and the Coulomb blockade signatures in the tunneling current.

Bottom-up, Robust Graphene Ribbon Electronics in All-Carbon Molecular Junctions.

PubMed

Supur, Mustafa; Van Dyck, Colin; Bergren, Adam J; McCreery, Richard L

2018-02-21

Large-area molecular electronic junctions consisting of 5-carbon wide graphene ribbons (GR) with lengths of 2-12 nm between carbon electrodes were fabricated by electrochemical reduction of diazotized 1,8-diaminonaphthalene. Their conductance greatly exceeds that observed for other molecular junctions of similar thicknesses, by a factor of >1 × 10 4 compared to polyphenylenes and >1 × 10 7 compared to alkane chains. The remarkable increase of conductance of the GR nanolayer results from (i) uninterrupted planarity of fused-arene structure affording extensive π-electron delocalization and (ii) enhanced electronic coupling of molecular layer with the carbon bottom contact by two-point covalent bonding, in agreement with DFT-based simulations.

Cell-to-cell diffusion of glucose in the mammalian heart is disrupted by high glucose. Implications for the diabetic heart.

PubMed

De Mello, Walmor C

2015-06-10

The cell-to-cell diffusion of glucose in heart cell pairs isolated from the left ventricle of adult Wistar Kyoto rats was investigated. For this, fluorescent glucose was dialyzed into one cell of the pair using the whole cell clamp technique, and its diffusion from cell-to-cell was investigated by measuring the fluorescence in the dialyzed as well as in non-dialyzed cell as a function of time. The results indicated that: 1) glucose flows easily from cell-to-cell through gap junctions; 2) high glucose solution (25 mM) disrupted chemical communication between cardiac cells and abolished the intercellular diffusion of glucose; 3) the effect of high glucose solution on the cell-to-cell diffusion of glucose was drastically reduced by Bis-1 (10(-9)M) which is a PKC inhibitor; 4) intracellular dialysis of Ang II (100 nM) or increment of intracellular calcium concentration (10(-8)M) also inhibited the intercellular diffusion of glucose; 5) high glucose enhances oxidative stress in heart cells; 6) calculation of gap junction permeability (Pj) (cm/s) indicated a value of 0.74±0.08×10(-4) cm/s (5 animals) for the controls and 0.4±0.001×10(-5) cm/s; n=35 (5 animals) (P<0.05) for cells incubated with high glucose solution for 24h; 7) measurements of Pj for cell pairs treated with high glucose plus Bis-1 (10(-9)M) revealed no significant change of Pj (P>0.05); 8) increase of intracellular Ca(2+) concentration (10(-8)M) drastically decreased Pj (Pj=0.3±0.003×10(-5) cm/s). Conclusions indicate that: 1) glucose flows from cell-to-cell in the heart through gap junctions; 2) high glucose (25 mM) inhibited the intercellular diffusion of glucose-an effect significantly reduced by PKC inhibition; 3) high intracellular Ca(2+) concentration abolished the cell-to-cell diffusion of glucose; 4) intracellular Ang II (100 nM) inhibited the intercellular diffusion of glucose indicating that intracrine Ang II, in part activated by high glucose, severely impairs the exchange of glucose between cardiac myocytes. These observations support the view that the intracrine renin angiotensin system is a modulator of chemical communication in the heart. The implications of these findings for the diabetic heart were discussed. Copyright © 2015 Elsevier Inc. All rights reserved.

Theoretical and experimental research in space photovoltaics

NASA Technical Reports Server (NTRS)

Faur, Mircea; Faur, Maria

1995-01-01

Theoretical and experimental research is outlined for indium phosphide solar cells, other solar cells for space applications, fabrication and performance measurements of shallow homojunction InP solar cells for space applications, improved processing steps and InP material characterization with applications to fabrication of high efficiency radiation resistant InP solar cells and other opto-electronic InP devices, InP solar cells fabricated by thermal diffusion, experiment-based predicted high efficiency solar cells fabricated by closed-ampoule thermal diffusion, radiation resistance of diffused junction InP solar cells, chemical and electrochemical characterization and processing of InP diffused structures and solar cells, and progress in p(+)n InP diffused solar cells.

Leakage current evaluation for pn junctions formed in DC and RF MeV ion implanted wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yanagisawa, Yasunobu; Honda, Mitsuharu; Ogasawara, Makota

1996-12-31

The leakage current of pn junctions formed in DC and RF MeV implanted wells have been evaluated. There is no substantial difference in the leakage current levels between the continuous and pulsive beam implantations. However, the leakage current, so called diffusion current, for RF implanted wells is slightly higher than that for DC implanted wells on some condition. This suggests a possibility that relatively higher density of residual defects remains in the case of RIF implant.

Tight junctions in cancer metastasis.

PubMed

Martin, Tracey A; Mason, Malcolm D; Jiang, Wen G

2011-01-01

Tight Junctions (TJ) are well known to function as a control for the paracellular diffusion of ions and certain molecules, it has however, become evident that the TJ has a vital role in maintaining cell to cell integrity. Loss of cohesion of the TJ structure can lead to invasion and ultimately to the metastasis of cancer cells. This review will discuss how modulation of expression of TJ molecules results in key changes in TJ barrier function leading to the progression of cancer and progression of metastasis.

Effects of convergent diffusion and charge transfer kinetics on the diffusion layer thickness of spherical micro- and nanoelectrodes.

PubMed

Molina, A; Laborda, E; González, J; Compton, R G

2013-05-21

Nuances of the linear diffusion layer approximation are examined for slow charge transfer reactions at (hemi)spherical micro- and nanoelectrodes. This approximation is widely employed in Electrochemistry to evaluate the extent of electrolyte solution perturbed by the electrode process, which is essential to the understanding of the effects arising from thin-layer diffusion, convergent diffusion, convection, coupled chemical reactions and the double layer. The concept was well established for fast charge transfer processes at macroelectrodes, but remains unclear under other conditions such that a thorough assessment of its meaning was necessary. In a previous publication [A. Molina, J. González, E. Laborda and R. G. Compton, Phys. Chem. Chem. Phys., 2013, 15, 2381-2388] we shed some light on the influence of the reversibility degree. In the present work, the meaning of the diffusion layer thickness is investigated when very small electrodes are employed and so the contribution of convergent diffusion to the mass transport is very important. An analytical expression is given to calculate the linear diffusion layer thickness at (hemi)spherical electrodes and its behaviour is studied for a wide range of conditions of reversibility (from reversible to fully-irreversible processes) and electrode size (from macro- to nano-electrodes). Rigorous analytical solutions are deduced for true concentration profiles, surface concentrations, linear diffusion layer thickness and current densities when a potential pulse is applied at (hemi)spherical electrodes. The expressions for the magnitudes mentioned above are valid for electrodes of any size (including (hemi)spherical nanoelectrodes) and for any degree of reversibility, provided that mass transport occurs exclusively via diffusion. The variation of the above with the electrode size, applied potential and charge transfer kinetics is studied.

Modeling of defect tolerance of IMM multijunction photovoltaics for space application

NASA Astrophysics Data System (ADS)

Mehrotra, Akhil; Freundlich, Alex

2013-03-01

Reduction of defects by use of thick sophisticated graded metamorphic buffers in inverted metamorphic solar cells has been a requirement to obtain high efficiency devices. With increase in number of metamorphic junctions to obtain higher efficiencies, these graded buffers constitute a significant part of growth time and cost for manufacturer of the solar cells. It's been shown that ultrathin 3 and 4 junction IMM devices perform better in presence of dislocations or/and radiation harsh environment compared to conventional thick IMM devices. Thickness optimization of the device would result in better defect and radiation tolerant behavior of 0.7ev and 1.0ev InGaAs sub-cells which would in turn require thinner buffers with higher efficiencies, hence reducing the total device thickness. It is also shown that for 3 and 4 junc. IMM, with an equivalent 1015 cm-2 1 MeV electron fluence radiation, very high EOL efficiencies can be afforded with substantially higher dislocation densities (<2×107 cm-2) than those commonly perceived as acceptable for IMM devices with remaining power factor as high as 0.85. The irregular radiation degradation behavior in 4-junc IMM is also explained by back photon reflection from gold contacts and reduced by using thickness optimization of 0.7ev and 1.0ev InGaAs sub-cells.

Reflectance confocal microscopy features of thin versus thick melanomas.

PubMed

Kardynal, Agnieszka; Olszewska, Małgorzata; de Carvalho, Nathalie; Walecka, Irena; Pellacani, Giovanni; Rudnicka, Lidia

2018-01-24

In vivo reflectance confocal microscopy (RCM) plays an increasingly important role in differential diagnosis of melanoma. The aim of the study was to assess typical confocal features of thin (≤1mm according to Breslow index) versus thick (>1mm) melanomas. 30 patients with histopathologically confirmed cutaneous melanoma were included in the study. Reflectance confocal microscopy was performed with Vivascope equipment prior to excision. Fifteen melanomas were thin (Breslow thickness ≤ 1mm) and 15 were thick melanomas (Breslow thickness >1mm). In the RCM examination, the following features were more frequently observed in thin compared to thick melanomas: edged papillae (26.7% vs 0%, p=0.032) and areas with honeycomb or cobblestone pattern (33.3% vs 6.7%, p=0.068). Both features are present in benign melanocytic lesions, so in melanoma are good prognostic factors. The group of thick melanomas compared to the group of thin melanomas in the RCM images presented with greater frequency of roundish cells (100% vs 40%, p=0.001), non-edged papillae (100% vs 60%, p=0.006), numerous pagetoid cells (73.3% vs 33.3%, p=0.028), numerous atypical cells at dermal-epidermal junction (53.3% vs 20%, p=0.058) and epidermal disarray (93.3% vs 66.7%, p=0.068). Non-invasive imaging methods helps in deepening of knowledge about the evolution and biology of melanoma. The most characteristic features for thin melanomas in confocal examination are: fragments of cobblestone or honeycomb pattern and edged papillae (as good prognostic factors). The features of thick melanomas in RCM examination are: roundish cells, non-edged papillae, numerous pagetoid cells at dermal-epidermal junction and epidermal disarray.

Photo-Sensitivity of Large Area Physical Vapor Deposited Mono and Bilayer MoS2 (Postprint)

DTIC Science & Technology

2014-07-01

layer MoS2 without any apparent rectifying junctions , making device fabrication straightforward. For bi-layers, no such effect was present, suggesting...layer MoS2 without any apparent rectifying junctions , making device fabrication straightforward. For bi-layers, no such effect was present, suggesting...pressure below 5×10−9 Torr for atomically sharp and clean interfaces. The mono and bi-layer specimens were grown on 100 nm thick thermal oxide coated silicon

Study of Gaussian Doped Double Gate JunctionLess (GD-DG-JL) transistor including source drain depletion length: Model for sub-threshold behavior

NASA Astrophysics Data System (ADS)

Kumari, Vandana; Kumar, Ayush; Saxena, Manoj; Gupta, Mridula

2018-01-01

The sub-threshold model formulation of Gaussian Doped Double Gate JunctionLess (GD-DG-JL) FET including source/drain depletion length is reported in the present work under the assumption that the ungated regions are fully depleted. To provide deeper insight into the device performance, the impact of gaussian straggle, channel length, oxide and channel thickness and high-k gate dielectric has been studied using extensive TCAD device simulation.

Bottom head to shell junction assembly for a boiling water nuclear reactor

DOEpatents

Fife, Alex Blair; Ballas, Gary J.

1998-01-01

A bottom head to shell junction assembly which, in one embodiment, includes an annular forging having an integrally formed pump deck and shroud support is described. In the one embodiment, the annular forging also includes a top, cylindrical shaped end configured to be welded to one end of the pressure vessel cylindrical shell and a bottom, conical shaped end configured to be welded to the disk shaped bottom head. Reactor internal pump nozzles also are integrally formed in the annular forging. The nozzles do not include any internal or external projections. Stubs are formed in each nozzle opening to facilitate welding a pump housing to the forging. Also, an upper portion of each nozzle opening is configured to receive a portion of a diffuser coupled to a pump shaft which extends through the nozzle opening. Diffuser openings are formed in the integral pump deck to provide additional support for the pump impellers. The diffuser opening is sized so that a pump impeller can extend at least partially therethrough. The pump impeller is connected to the pump shaft which extends through the nozzle opening.

Bottom head to shell junction assembly for a boiling water nuclear reactor

DOEpatents

Fife, A.B.; Ballas, G.J.

1998-02-24

A bottom head to shell junction assembly which, in one embodiment, includes an annular forging having an integrally formed pump deck and shroud support is described. In the one embodiment, the annular forging also includes a top, cylindrical shaped end configured to be welded to one end of the pressure vessel cylindrical shell and a bottom, conical shaped end configured to be welded to the disk shaped bottom head. Reactor internal pump nozzles also are integrally formed in the annular forging. The nozzles do not include any internal or external projections. Stubs are formed in each nozzle opening to facilitate welding a pump housing to the forging. Also, an upper portion of each nozzle opening is configured to receive a portion of a diffuser coupled to a pump shaft which extends through the nozzle opening. Diffuser openings are formed in the integral pump deck to provide additional support for the pump impellers. The diffuser opening is sized so that a pump impeller can extend at least partially therethrough. The pump impeller is connected to the pump shaft which extends through the nozzle opening. 5 figs.

Diffusion and sorption of organic micropollutants in biofilms with varying thicknesses.

PubMed

Torresi, Elena; Polesel, Fabio; Bester, Kai; Christensson, Magnus; Smets, Barth F; Trapp, Stefan; Andersen, Henrik R; Plósz, Benedek Gy

2017-10-15

Solid-liquid partitioning is one of the main fate processes determining the removal of micropollutants in wastewater. Little is known on the sorption of micropollutants in biofilms, where molecular diffusion may significantly influence partitioning kinetics. In this study, the diffusion and the sorption of 23 micropollutants were investigated in novel moving bed biofilm reactor (MBBR) carriers with controlled biofilm thickness (50, 200 and 500 μm) using targeted batch experiments (initial concentration = 1 μg L -1 , for X-ray contrast media 15 μg L -1 ) and mathematical modelling. We assessed the influence of biofilm thickness and density on the dimensionless effective diffusivity coefficient f (equal to the biofilm-to-aqueous diffusivity ratio) and the distribution coefficient K d,eq (L g -1 ). Sorption was significant only for eight positively charged micropollutants (atenolol, metoprolol, propranolol, citalopram, venlafaxine, erythromycin, clarithromycin and roxithromycin), revealing the importance of electrostatic interactions with solids. Sorption equilibria were likely not reached within the duration of batch experiments (4 h), particularly for the thickest biofilm, requiring the calculation of the distribution coefficient K d,eq based on the approximation of the asymptotic equilibrium concentration (t > 4 h). K d,eq values increased with increasing biofilm thickness for all sorptive micropollutants (except atenolol), possibly due to higher porosity and accessible surface area in the thickest biofilm. Positive correlations between K d,eq and micropollutant properties (polarity and molecular size descriptors) were identified but not for all biofilm thicknesses, thus confirming the challenge of improving predictive sorption models for positively charged compounds. A diffusion-sorption model was developed and calibrated against experimental data, and estimated f values also increased with increasing biofilm thickness. This indicates that diffusion in thin biofilms may be strongly limited (f ≪ 0.1) by the high biomass density (reduced porosity). Copyright © 2017 Elsevier Ltd. All rights reserved.

Dual-Mode Nuclear Radiation Particle Detector

NASA Astrophysics Data System (ADS)

Zhang, Yali

The design and fabrication of a "dual-mode" nuclear radiation detector using planar silicon technology is described. The device operates at 0.3 K and detects simultaneously the ionization and the phonons produced by nuclear radiation interacting in the substrate. The intended purpose of the device is to detect atomic silicon recoils from the scattering of massive neutral particles that are hypothesized to compose the dark matter halo of our galaxy. The "dual mode" functionality was designed to permit atomic recoils to be distinguished event-by-event from the background due to unavoidable low-level radioactivity in the detector and its surroundings. The device consists of a back contact biased negatively relative to a comb-shaped electrode structure on the opposite face of a high purity wafer. The spacing of the comb teeth is less than the wafer thickness, providing a uniform charge collection electric field throughout most of the wafer volume. Between the teeth of the comb are superconducting transition edge devices consisting of serpentines of 400 A thick, 2 μm wide Ti lines separated by 3 μm spaces. Investigations of ionization-detecting metal-on -silicon contacts at low temperatures are described, including diffused junctions, Au on Si, Au on oxidized Si, and Ti on Si. Diode characteristics continue to change qualitatively at temperatures below 4 K. The destruction of superconductivity in Ti by Au contamination during microfabrication procedures is also reported.

Reduction of foveal bulges and other anatomical changes in fellow eyes of patients with unilateral idiopathic macular hole without vitreomacular pathologic changes.

PubMed

Delas, Barbara; Julio, Gemma; Fernández-Vega, Álvaro; Casaroli-Marano, Ricardo P; Nadal, Jeroni

2017-11-01

To compare the foveal characteristics in fellow eyes (FE) of patients with unilateral idiopathic macular hole without vitreomacular pathologic changes with eyes of healthy controls. Forty-seven FE and 52 eyes of 52 age- and sex-matched healthy controls were studied. Quantitative assessment of the dome-shaped appearance of the hyperreflective lines that represent external limiting membrane (ELM_bulge) and inner outer segment junctions (IS/OS_bulge) were made by optical coherence tomography (OCT) images. Inner retinal complex thickness (IRCT) was quantitatively assessed at 1000 and 2000 μm of the foveal center in nasal and temporal quadrants. Presence of alterations in the inner retinal outer layers and central foveal thickness (CFT) were also analyzed. Significantly lower ELM_bulge (p < 0.0001; Mann-Whitney test) and IS/OS_bulge (p < 0.001; student t test) and higher cases with COST alterations, expressed as a diffuse line (p < 0.006; Chi 2 test) were found in FE than control eyes. IRCT were significantly reduced in FE at all the studied locations when comparing to control eyes (p < 0.05; student t test), maintaining anatomical proportionality among locations. FE without pathologic vitreomacular interactions seems to present some central cone alterations that may be related to other causes than vitreomacular traction.

A charge-based model of Junction Barrier Schottky rectifiers

NASA Astrophysics Data System (ADS)

Latorre-Rey, Alvaro D.; Mudholkar, Mihir; Quddus, Mohammed T.; Salih, Ali

2018-06-01

A new charge-based model of the electric field distribution for Junction Barrier Schottky (JBS) diodes is presented, based on the description of the charge-sharing effect between the vertical Schottky junction and the lateral pn-junctions that constitute the active cell of the device. In our model, the inherently 2-D problem is transformed into a simple but accurate 1-D problem which has a closed analytical solution that captures the reshaping and reduction of the electric field profile responsible for the improved electrical performance of these devices, while preserving physically meaningful expressions that depend on relevant device parameters. The validation of the model is performed by comparing calculated electric field profiles with drift-diffusion simulations of a JBS device showing good agreement. Even though other fully 2-D models already available provide higher accuracy, they lack physical insight making the proposed model an useful tool for device design.

Critical current of SF-NFS Josephson junctions

NASA Astrophysics Data System (ADS)

Soloviev, I. I.; Klenov, N. V.; Bakursky, S. V.; Kupriyanov, M. Yu.; Golubov, A. A.

2015-02-01

The properties of SF-NFS sandwiches composed of two superconducting (S) electrodes separated by a weak-link region formed by a normal-metal (N) step with the thickness d N situated on the top of a lower S electrode and a ferromagnetic (F) layer with the thickness d F deposited onto the step and the remaining free surface of the lower electrode have been studied theoretically. It has been shown in the approximation of linearized semiclassical Usadel equations that the two-dimensional problem in the weak-link region can be reduced to two one-dimensional problems in its SFS and SNFS segments. The spatial distributions of the critical current density J c in the segments as a function of the layer thickness d F have been calculated. The dependences of the critical current I c of the structure on the magnitude of the magnetization vector M of the ferromagnetic layer have been found for various directions of the magnetization within the junction plane. It has been shown that these dependences are affected considerably by both the orientation of M and the spatial distribution of J c.

Thick Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} Films Grown by Liquid-Phase Epitaxy for Josephson THz Applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simsek, Y.; Vlasko-Vlasov, V.; Koshelev, A. E.

Theoretical and experimental studies of intrinsic Josephson junctions that naturally occur in high-Tc superconducting Bi2Sr2CaCu2O8+δ (Bi-2212) have demonstrated their potential for novel types of compact devices for the generation and sensing of electromagnetic radiation in the THz range. Here, we show that the THz-on-a-chip concept may be realized in liquid phase epitaxial-grown (LPE) thick Bi-2212 films. We have grown μm-thick Bi-2212 LPE films on MgO substrates. These films display excellent c-axis alignment and single crystal grains of about 650 × 150 μm2 in size. A branched current-voltage characteristic was clearly observed in c-axis transport, which is a clear signature ofmore » underdamped intrinsic Josephson junctions, and a prerequisite for THz-generation. We discuss LPE growth conditions allowing improvement of the structural quality and superconducting properties of Bi-2212 films for THz applications.« less

Imaging Effects of Neurotrophic Factor Genes on Brain Plasticity and Repair in Multiple Sclerosis

DTIC Science & Technology

2011-07-01

focal and diffuse effects in brain (including cortical thickness and subcortical volume measures, lesion volumetry , and voxel-based morphometry and...to both focal and diffuse effects in gray and white matter, including cortical thickness and subcortical volume measures, lesion volumetry , and

Superpoissonian shot noise in organic magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cascales, Juan Pedro; Martinez, Isidoro; Aliev, Farkhad G., E-mail: farkhad.aliev@uam.es

Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunnelingmore » through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.« less

Theoretical evaluation of two dimensional electron gas characteristics of quaternary AlxInyGa1-x-yN/GaN hetero-junctions

NASA Astrophysics Data System (ADS)

Rahbardar Mojaver, Hassan; Manouchehri, Farzin; Valizadeh, Pouya

2016-04-01

The two dimensional electron gas (2DEG) characteristics of gated metal-face wurtzite AlInGaN/GaN hetero-junctions including positions of subband energy levels, fermi energy level, and the 2DEG concentration as functions of physical and compositional properties of the hetero-junction (i.e., barrier thickness and metal mole-fractions) are theoretically evaluated using the variational method. The calculated values of the 2DEG concentration are in good agreement with the sparsely available experimental data reported in the literature. According to our simulation results, a considerable shift in the positive direction of threshold voltage of AlInGaN/GaN hetero-junction field-effect transistors can be achieved by engineering both the spontaneous and the piezoelectric polarizations using a quaternary AlInGaN barrier-layer of appropriate mole-fractions.

InGaP alpha voltaic batteries: Synthesis, modeling, and radiation tolerance

NASA Astrophysics Data System (ADS)

Cress, Cory D.; Landi, Brian J.; Raffaelle, Ryne P.; Wilt, David M.

2006-12-01

The viability of InGaP diodes coupled with α-particle sources as radioisotope power supplies is investigated both theoretically and experimentally. The electrical power output of epitaxially grown InGaP p-type/n-type (p/n) junction diodes coupled with Am241 and Po210 α-particle sources was measured. A theoretical model was developed that determines the α-particle energy deposition profile within an InGaP diode when irradiated by an omnidirectional α-particle source. The results of the model illustrate the dramatic influence the radiation source/diode configuration has on the α-particle energy deposition profile within a device. Progress has been shown towards increasing the radiation tolerance of the InGaP devices, which included utilizing an intrinsic region and reducing the junction thickness. Introduction of the intrinsic region within a conventional n /p diode to form a n-type/intrinsic/p-type diode enabled the device to withstand a ten times greater fluence of 4.2MeV α particles before decreasing to 50% of its original power output under simulated air mass zero illumination, when compared to an abrupt junction device with the same active region thickness.

Spin-Polarization in Quasi-Magnetic Tunnel Junctions

NASA Astrophysics Data System (ADS)

Xie, Zheng-Wei; Li, Ling

2017-05-01

Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasi-magnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight. Supported by the Key Natural Science Fund of Sichuan Province Education Department under Grant Nos 13ZA0149 and 16ZA0047, and the Construction Plan for Scientific Research Innovation Team of Universities in Sichuan Province under Grant No 12TD008.

General Model of Hindered Diffusion.

PubMed

Eloul, Shaltiel; Compton, Richard G

2016-11-03

The diffusion of a particle from bulk solution is slowed as it moves close to an adsorbing surface. A general model is reported that is easily applied by theoreticians and experimentalists. Specifically, it is shown here that in general and regardless of the space size, the magnitude of the effect of hindered diffusion on the flux is a property of the diffusion layer thickness. We explain and approximate the effect. Predictions of concentration profiles show that a "hindered diffusion layer" is formed near the adsorbing surface within the diffusion layer, observed even when the particle radius is just a 0.1% of the diffusion layer thickness. In particular, we focus on modern electrochemistry processes involving with impact of particles with either ultrasmall electrodes or particles in convective systems. The concept of the "hindered diffusion layer" is generally important for example in recent biophysical models of particles diffusion to small targets.

Origin of hydrogen-inclusion-induced critical current deviation in Nb/AlOx/Al/Nb Josephson junctions

NASA Astrophysics Data System (ADS)

Hinode, Kenji; Satoh, Tetsuro; Nagasawa, Shuichi; Hidaka, Mutsuo

2010-04-01

We investigated the mechanisms that change the critical current density (Jc) of Nb/AlOx/Al/Nb Josephson junctions due to the inclusion of hydrogen in the Nb electrodes. Our investigations were performed according to three aspects: the superconductivity change, the change in thickness of the barrier layer, and the change in the barrier height due to the electronic effect. The results are as follows: (a) the hydrogen-inclusion-accompanied changes in the superconductivity parameters, such as the junction gap voltage, were much less than those of the critical current density, (b) the effect of hydrogen inclusion on Jc varied depending on the electrodes, i.e., the upper electrode above the barrier layer was the most affected, (c) the junctions with increased Ics due to hydrogen exclusion showed the identical amount of decrease in the junction resistance measured at room temperature, and (d) the hydrogen exclusion from the junction electrodes had no influence on the Nb/Al/AlOx/Al/Nb junctions, which had an extra Al layer. Based on these results we conclude that the Jc change is mainly caused by the change in junction resistance. A one order of magnitude smaller effect is caused by the superconductivity change. We believe the Jc change is caused by a Nb work function increase due to the hydrogen inclusion, resulting in an increase in barrier height.

Reappraisal of the Arabia-India-Somalia triple junction kinematics

NASA Astrophysics Data System (ADS)

Fournier, Marc; Patriat, Philippe; Leroy, Sylvie

2001-07-01

We propose alternative kinematics for the Arabia-India-Somalia triple junction based on a re-interpretation of seismological and magnetic data. The new triple junction of the ridge-ridge-ridge type is located at the bend of the Sheba Ridge in the eastern gulf of Aden at 14.5°N and 56.4°E. The Owen fracture zone (Arabia-India boundary) is connected to the Sheba Ridge by an ultra-slow divergent boundary trending N80°E±10° marked by diffuse seismicity. The location of the Arabia-India rotation pole is constrained at 14.1°N and 71.2°E by fitting the active part of the Owen fracture zone with a small circle. The finite kinematics of the triple junction is inferred from the present-day kinematics. Since the inception of the accretion 15-18 Ma ago, the Sheba Ridge has probably receded ∼300 km at the expense of the Carlsberg Ridge which propagated northwestward in the gulf of Aden, while an ultra-slow divergent plate boundary developed between the Arabian and Indian plates. The overall geometry of the new triple junction is very similar to that of the Azores triple junction.

Bile duct epithelial tight junctions and barrier function

PubMed Central

Rao, R.K.; Samak, G.

2013-01-01

Bile ducts play a crucial role in the formation and secretion of bile as well as excretion of circulating xenobiotic substances. In addition to its secretory and excretory functions, bile duct epithelium plays an important role in the formation of a barrier to the diffusion of toxic substances from bile into the hepatic interstitial tissue. Disruption of barrier function and toxic injury to liver cells appear to be involved in the pathogenesis of a variety of liver diseases such as primary sclerosing cholangitis, primary biliary cirrhosis and cholangiocarcinoma. Although the investigations into understanding the structure and regulation of tight junctions in gut, renal and endothelial tissues have expanded rapidly, very little is known about the structure and regulation of tight junctions in the bile duct epithelium. In this article we summarize the current understanding of physiology and pathophysiology of bile duct epithelium, the structure and regulation of tight junctions in canaliculi and bile duct epithelia and different mechanisms involved in the regulation of disruption and protection of bile duct epithelial tight junctions. This article will make a case for the need of future investigations toward our understanding of molecular organization and regulation of canalicular and bile duct epithelial tight junctions. PMID:24665411

Photocurrent spectroscopy of exciton and free particle optical transitions in suspended carbon nanotube pn-junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Shun-Wen; Theiss, Jesse; Hazra, Jubin

2015-08-03

We study photocurrent generation in individual, suspended carbon nanotube pn-junction diodes formed by electrostatic doping using two gate electrodes. Photocurrent spectra collected under various electrostatic doping concentrations reveal distinctive behaviors for free particle optical transitions and excitonic transitions. In particular, the photocurrent generated by excitonic transitions exhibits a strong gate doping dependence, while that of the free particle transitions is gate independent. Here, the built-in potential of the pn-junction is required to separate the strongly bound electron-hole pairs of the excitons, while free particle excitations do not require this field-assisted charge separation. We observe a sharp, well defined E{sub 11}more » free particle interband transition in contrast with previous photocurrent studies. Several steps are taken to ensure that the active charge separating region of these pn-junctions is suspended off the substrate in a suspended region that is substantially longer than the exciton diffusion length and, therefore, the photocurrent does not originate from a Schottky junction. We present a detailed model of the built-in fields in these pn-junctions, which, together with phonon-assistant exciton dissociation, predicts photocurrents on the same order of those observed experimentally.« less

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

NASA Astrophysics Data System (ADS)

Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

2017-11-01

In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium-nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (~2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs.

Imaging Effects of Neurotrophic Factor Genes on Brain Plasticity and Repair in Multiple Sclerosis

DTIC Science & Technology

2012-07-01

sensitive to focal and diffuse changes in brain tissue (including cortical thickness and subcortical volume measures, lesion volumetry , and voxel-based...sensitive to both focal and diffuse effects in gray and white matter, including cortical thickness and subcortical volume measures, lesion volumetry , and

MR imaging of the uterus and cervix in healthy women: determination of normal values.

PubMed

Hauth, Elke A M; Jaeger, Horst J; Libera, Hanna; Lange, Silke; Forsting, Michael

2007-03-01

The purpose of this study was to establish normal values for the volume of the uterus and cervix in MRI based on age and the menstrual cycle phase. We performed MRI of the pelvis in 100 healthy women. For the uterus, they were further divided into two groups: one with myomas and/or adenomyosis and one without either. The volume of the uterus and cervix and thickness of the uterine wall layers were analysed by age and the menstrual cycle phase. The mean volume of the uterus in both groups and the cervix significantly increased with age to reach its peak at 41-50 years, and then dropped. Likewise, the thickness of the endometrium and the junctional zone, but not the myometrium, significantly increased until 41-50 years, and then decreased. When we compared the volume of the uterus and cervix and the thickness of the uterine wall layers between the two phases of the menstrual cycle, we found no significant differences. The volume of the uterus and cervix and the thickness of the endometrium and junctional zone differ significantly with age, but not between the two phases of the menstrual cycle. Knowledge of MRI-related normal values can be expected to aid the early identification of uterine pathologies.

Fast Response and High Sensitivity of ZnO Nanowires-Cobalt Phthalocyanine Heterojunction Based H2S Sensor.

PubMed

Kumar, Ashwini; Samanta, Soumen; Singh, Ajay; Roy, Mainak; Singh, Surendra; Basu, Saibal; Chehimi, Mohmad M; Roy, Kallol; Ramgir, Niranjan; Navaneethan, M; Hayakawa, Y; Debnath, Anil K; Aswal, Dinesh K; Gupta, Shiv K

2015-08-19

The room temperature chemiresistive response of n-type ZnO nanowire (ZnO NWs) films modified with different thicknesses of p-type cobalt phthalocyanine (CoPc) has been studied. With increasing thickness of CoPc (>15 nm), heterojunction films exhibit a transition from n- to p-type conduction due to uniform coating of CoPc on ZnO. The heterojunction films prepared with a 25 nm thick CoPc layer exhibit the highest response (268% at 10 ppm of H2S) and the fastest response (26 s) among all samples. The X-ray photoelectron spectroscopy and work function measurements reveal that electron transfer takes place from ZnO to CoPc, resulting in formation of a p-n junction with a barrier height of 0.4 eV and a depletion layer width of ∼8.9 nm. The detailed XPS analysis suggests that these heterojunction films with 25 nm thick CoPc exhibit the least content of chemisorbed oxygen, enabling the direct interaction of H2S with the CoPc molecule, and therefore exhibit the fastest response. The improved response is attributed to the high susceptibility of the p-n junctions to the H2S gas, which manipulates the depletion layer width and controls the charge transport.

Surface diffusivity measurements on 8mol.% yttrium oxide-zirconia bicrystals via grain boundary grooving experiments

NASA Astrophysics Data System (ADS)

Nassirou, Maissarath

Thermal grooving at grain boundaries (GBs) is a capillary-driven evolution of surface topography in the region where the grain boundary emerges at a free surface. The study of these topographic changes can provide insight into surface energetics, and in our particular case, the measurement of surface diffusivity. We have measured the surface diffusion coefficient of 8mol% Y 2O3-ZrO2 by studying the formation of thermal grooves. We studied a total of five bicrystals, with well defined orientation relationships; random [110] -60°, random [001] -30°, Sigma13 [001]/{510}, Sigma13 [001]/{320}, Sigma5 [001]/{210}. Our calculations employed the Herring relation (1951), in which the variation in the chemical potential is related to changes in topography. The samples were annealed at 1300°C and 1400°C for various period of time. Atomic Force Microscopy was used to determine the exact geometry of the thermal grooves. A first approach consisted of estimating the diffusion coefficient by using Mullins' equation. yx=0= dsDs1/ 4gb2g s12G 5/4( WkTgs) 1/4t 1/4 Where y(x =0) is the groove depth at the GB triple junction, O is the atomic volume, gs is the surface tension, gb is the grain boundary surface energy, ds is the thickness of the diffusion layer, t is the annealing time, and Ds is the surface diffusion coefficient. In Mullins' derivation, the atomic structure of the surface was ignored and it was assumed that the surface energy is independent of crystallographic orientation. In the case of zirconia, the surface energy is anisotropic. We will describe in this work a new approach to measuring surface diffusivity which accounts for the surface energy anisotropy. The study of these bicrystals will emphasize the effect of grain boundary structure on the surface diffusion coefficient, and it is for that purpose that we selected bicrystals with different tilt axes and angles. The results obtained using the equation set we have developed will be compared to those obtained by Mullins, and we show that the anisotropic groove evolution, even when perfectly symmetrical, is much slower than the corresponding isotropic case.

Measurement of Beta Particles Induced Electron-Hole Pairs Recombination in Depletion Region of GaAs PN Junction

NASA Astrophysics Data System (ADS)

Chen, Hai-Yang; Jiang, Lan; Li, Da-Rang

2011-05-01

PN junctions and schottky diodes are widely employed as electron-hole pair collectors in electron beam induced current (EBIC) techniques and betavoltaic batteries, in which the recombination in depletion regions is ignored. We measured the beta particles induced electron-hole pairs recombination in the depletion region of a GaAs P+PN+ junction, based on comparisons between measured short currents and ideal values. The results show that only 20% electron-hole pairs in the depletion can be collected, causing the short current. This indicates an electron-hole pair diffusion length of 0.2μm in the depletion region. Hence, it is necessary to evaluate the recombination in the EBIC techniques and betavoltaic design.

Adherence of Non-O157 Shiga Toxin–Producing Escherichia coli to Bovine Recto-anal Junction Squamous Epithelial Cells Appears to Be Mediated by Mechanisms Distinct from Those Used by O157

PubMed Central

Hovde, Carolyn J.; John, Manohar

2013-01-01

Abstract This study presents evidence that the pattern (diffuse or aggregative) of adherence of clinically relevant non-O157 Shiga toxin–producing Escherichia coli (STEC) to bovine recto-anal junction squamous epithelial cells is similar to that of E. coli O157, although the mechanisms of adherence appear to be distinct. Our results further suggest that novel adhesins, and not Intimin, are likely involved in non-O157 STEC adherence to bovine recto-anal junction squamous epithelial cells. These findings have important implications for the development of efficacious modalities for blocking adherence of non-O157 STEC to bovine gastrointestinal epithelial cells. PMID:23510495

Numerical study of three-dimensional separation and flow control at a wing/body junction

NASA Technical Reports Server (NTRS)

Ash, Robert L.; Lakshmanan, Balakrishnan

1989-01-01

The problem of three-dimensional separation and flow control at a wing/body junction has been investigated numerically using a three-dimensional Navier-Stokes code. The numerical code employs an algebraic grid generation technique for generating the grid for unmodified junction and an elliptic grid generation technique for filleted fin junction. The results for laminar flow past a blunt fin/flat plate junction demonstrate that after grid refinement, the computations agree with experiment and reveal a strong dependency of the number of vortices at the junction on Mach number and Reynolds number. The numerical results for pressure distribution, particle paths and limiting streamlines for turbulent flow past a swept fin show a decrease in the peak pressure and in the extent of the separated flow region compared to the laminar case. The results for a filleted juncture indicate that the streamline patterns lose much of their vortical character with proper filleting. Fillets with a radius of three and one-half times the fin leading edge diameter or two times the incoming boundary layer thickness, significantly weaken the usual necklace interaction vortex for the Mach number and Reynolds number considered in the present study.

Semiconductor Lasers Containing Quantum Wells in Junctions

NASA Technical Reports Server (NTRS)

Yang, Rui Q.; Qiu, Yueming

2004-01-01

In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).

Expression of ZO-1 and claudin-1 in a 3D epidermal equivalent using canine progenitor epidermal keratinocytes.

PubMed

Teramoto, Keiji; Asahina, Ryota; Nishida, Hidetaka; Kamishina, Hiroaki; Maeda, Sadatoshi

2018-05-21

Previous studies indicate that tight junctions are involved in the pathogenesis of canine atopic dermatitis (cAD). An in vitro skin model is needed to elucidate the specific role of tight junctions in cAD. A 3D epidermal equivalent model using canine progenitor epidermal keratinocytes (CPEK) has been established; the expression of tight junctions within this model is uncharacterized. To investigate the expression of tight junctions in the 3D epidermal equivalent. Two normal laboratory beagle dogs served as donors of full-thickness skin biopsy samples for comparison to the in vitro model. Immunohistochemical techniques were employed to investigate the expression of tight junctions including zonula occludens (ZO)-1 and claudin-1 in normal canine skin, and in the CPEK 3D epidermal equivalent. Results demonstrated the expression of ZO-1 and claudin-1 in the CPEK 3D epidermal equivalent, with staining patterns that were similar to those in normal canine skin. The CPEK 3D epidermal equivalent has the potential to be a suitable in vitro research tool for clarifying the specific role of tight junctions in cAD. © 2018 ESVD and ACVD.

New Layer Thickness Parameterization of Diffusive Convection

NASA Astrophysics Data System (ADS)

Zhou, Sheng-Qi; Lu, Yuan-Zheng; Guo, Shuang-Xi; Song, Xue-Long; Qu, Ling; Cen, Xian-Rong; Fer, Ilker

2017-11-01

Double-diffusion convection is one of the most important non-mechanically driven mixing processes. Its importance has been particular recognized in oceanography, material science, geology, and planetary physics. Double-diffusion occurs in a fluid in which there are gradients of two (or more) properties with different molecular diffusivities and of opposing effects on the vertical density distribution. It has two primary modes: salt finger and diffusive convection. Recently, the importance of diffusive convection has aroused more interest due to its impact to the diapycnal mixing in the interior ocean and the ice and the ice-melting in the Arctic and Antarctic Oceans. In our recent work, we constructed a length scale of energy-containing eddy and proposed a new layer thickness parameterization of diffusive convection by using the laboratory experiment and in situ observations in the lakes and oceans. The new parameterization can well describe the laboratory convecting layer thicknesses (0.01 0.1 m) and those observed in oceans and lakes (0.1 1000 m). This work was supported by China NSF Grants (41476167,41406035 and 41176027), NSF of Guangdong Province, China (2016A030311042) and the Strategic Priority Research Program of the Chinese Academy of Sciences (XDA11030302).

Intercellular diffusion of a fluorescent sucrose analog via the septal junctions in a filamentous cyanobacterium.

PubMed

Nürnberg, Dennis J; Mariscal, Vicente; Bornikoel, Jan; Nieves-Morión, Mercedes; Krauß, Norbert; Herrero, Antonia; Maldener, Iris; Flores, Enrique; Mullineaux, Conrad W

2015-03-17

Many filamentous cyanobacteria produce specialized nitrogen-fixing cells called heterocysts, which are located at semiregular intervals along the filament with about 10 to 20 photosynthetic vegetative cells in between. Nitrogen fixation in these complex multicellular bacteria depends on metabolite exchange between the two cell types, with the heterocysts supplying combined-nitrogen compounds but dependent on the vegetative cells for photosynthetically produced carbon compounds. Here, we used a fluorescent tracer to probe intercellular metabolite exchange in the filamentous heterocyst-forming cyanobacterium Anabaena sp. strain PCC 7120. We show that esculin, a fluorescent sucrose analog, is incorporated by a sucrose import system into the cytoplasm of Anabaena cells. The cytoplasmic esculin is rapidly and reversibly exchanged across vegetative-vegetative and vegetative-heterocyst cell junctions. Our measurements reveal the kinetics of esculin exchange and also show that intercellular metabolic communication is lost in a significant fraction of older heterocysts. SepJ, FraC, and FraD are proteins located at the intercellular septa and are suggested to form structures analogous to gap junctions. We show that a ΔsepJ ΔfraC ΔfraD triple mutant shows an altered septum structure with thinner septa but a denser peptidoglycan layer. Intercellular diffusion of esculin and fluorescein derivatives is impaired in this mutant, which also shows a greatly reduced frequency of nanopores in the intercellular septal cross walls. These findings suggest that FraC, FraD, and SepJ are important for the formation of junctional structures that constitute the major pathway for feeding heterocysts with sucrose. Anabaena and its relatives are filamentous cyanobacteria that exhibit a sophisticated form of prokaryotic multicellularity, with the formation of differentiated cell types, including normal photosynthetic cells and specialized nitrogen-fixing cells called heterocysts. The question of how heterocysts communicate and exchange metabolites with other cells in the filament is key to understanding this form of bacterial multicellularity. Here we provide the first information on the intercellular exchange of a physiologically important molecule, sucrose. We show that a fluorescent sucrose analog can be imported into the Anabaena cytoplasm by a sucrose import system. Once in the cytoplasm, it is rapidly and reversibly exchanged among all of the cells in the filament by diffusion across the septal junctions. Photosynthetically produced sucrose likely follows the same route from cytoplasm to cytoplasm. We identify some of the septal proteins involved in sucrose exchange, and our results indicate that these proteins form structures functionally analogous to metazoan gap junctions. Copyright © 2015 Nürnberg et al.

Flat-plate solar array project process development area: Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1986-01-01

Several different techniques to simultaneously diffuse the front and back junctions in dendritic web silicon were investigated. A successful simultaneous diffusion reduces the cost of the solar cell by reducing the number of processing steps, the amount of capital equipment, and the labor cost. The three techniques studied were: (1) simultaneous diffusion at standard temperatures and times using a tube type diffusion furnace or a belt furnace; (2) diffusion using excimer laser drive-in; and (3) simultaneous diffusion at high temperature and short times using a pulse of high intensity light as the heat source. The use of an excimer laser and high temperature short time diffusion experiment were both more successful than the diffusion at standard temperature and times. The three techniques are described in detail and a cost analysis of the more successful techniques is provided.

AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiong, Kanglin; Mi, Hongyi; Chang, Tzu-Hsuan

A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.

AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding

DOE PAGES

Xiong, Kanglin; Mi, Hongyi; Chang, Tzu-Hsuan; ...

2018-01-04

A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.

The handling of thin substrates and its potential for new architectures in multi-junction solar cells technology

NASA Astrophysics Data System (ADS)

Colin, Clément; Jaouad, Abdelatif; Darnon, Maxime; De Lafontaine, Mathieu; Volatier, Maïté; Boucherif, Abderraouf; Arès, Richard; Fafard, Simon; Aimez, Vincent

2017-09-01

In this paper, we investigate the development of a robust handling process for thin (<50 µm) substrates in the framework of the monolithic multi-junction solar cell (MJSC) technology. The process, designed for its versatility, is based on a temporary front side bonding of the cell with a polymeric adhesive and then a permanent back side soldering, allowing classical cell micro-fabrication steps on both sides of the wafer. We have demonstrated that the process does not degrade the performances of monolithic MJSC with Ge substrates thickness reduced from 170 µm to 25 µm. Then, we investigate a perspective unlocked with this work: the study of 3D-interconnect architecture for multi-junction solar cells.

Simulation of miniature endplate potentials in neuromuscular junctions by using a cellular automaton

NASA Astrophysics Data System (ADS)

Avella, Oscar Javier; Muñoz, José Daniel; Fayad, Ramón

2008-01-01

Miniature endplate potentials are recorded in the neuromuscular junction when the acetylcholine contents of one or a few synaptic vesicles are spontaneously released into the synaptic cleft. Since their discovery by Fatt and Katz in 1952, they have been among the paradigms in neuroscience. Those potentials are usually simulated by means of numerical approaches, such as Brownian dynamics, finite differences and finite element methods. Hereby we propose that diffusion cellular automata can be a useful alternative for investigating them. To illustrate this point, we simulate a miniature endplate potential by using experimental parameters. Our model reproduces the potential shape, amplitude and time course. Since our automaton is able to track the history and interactions of each single particle, it is very easy to introduce non-linear effects with little computational effort. This makes cellular automata excellent candidates for simulating biological reaction-diffusion processes, where no other external forces are involved.

InAlAs photovoltaic cell design for high device efficiency

DOE PAGES

Smith, Brittany L.; Bittner, Zachary S.; Hellstroem, Staffan D.; ...

2017-04-17

This study presents a new design for a single-junction InAlAs solar cell, which reduces parasitic absorption losses from the low band-gap contact layer while maintaining a functional window layer by integrating a selective etch stop. The etch stop is then removed prior to depositing an anti-reflective coating. The final cell had a 17.9% efficiency under 1-sun AM1.5 with an anti-reflective coating. Minority carrier diffusion lengths were extracted from external quantum efficiency data using physics-based device simulation software yielding 170 nm in the n-type emitter and 4.6 um in the p-type base, which is more than four times the diffusion lengthmore » previously reported for a p-type InAlAs base. In conclusion, this report represents significant progress towards a high-performance InAlAs top cell for a triple-junction design lattice-matched to InP.« less

Fluorescence recovery after photobleaching reveals regulation and distribution of connexin36 gap junction coupling within mouse islets of Langerhans

PubMed Central

Farnsworth, Nikki L; Hemmati, Alireza; Pozzoli, Marina; Benninger, Richard K P

2014-01-01

The pancreatic islets are central to the maintenance of glucose homeostasis through insulin secretion. Glucose-stimulated insulin secretion is tightly linked to electrical activity in β cells within the islet. Gap junctions, composed of connexin36 (Cx36), form intercellular channels between β cells, synchronizing electrical activity and insulin secretion. Loss of gap junction coupling leads to altered insulin secretion dynamics and disrupted glucose homeostasis. Gap junction coupling is known to be disrupted in mouse models of pre-diabetes. Although approaches to measure gap junction coupling have been devised, they either lack cell specificity, suitable quantification of coupling or spatial resolution, or are invasive. The purpose of this study was to develop fluorescence recovery after photobleaching (FRAP) as a technique to accurately and robustly measure gap junction coupling in the islet. The cationic dye Rhodamine 123 was used with FRAP to quantify dye diffusion between islet β cells as a measure of Cx36 gap junction coupling. Measurements in islets with reduced Cx36 verified the accuracy of this technique in distinguishing between distinct levels of gap junction coupling. Analysis of individual cells revealed that the distribution of coupling across the islet is highly heterogeneous. Analysis of several modulators of gap junction coupling revealed glucose- and cAMP-dependent modulation of gap junction coupling in islets. Finally, FRAP was used to determine cell population specific coupling, where no functional gap junction coupling was observed between α cells and β cells in the islet. The results of this study show FRAP to be a robust technique which provides the cellular resolution to quantify the distribution and regulation of Cx36 gap junction coupling in specific cell populations within the islet. Future studies utilizing this technique may elucidate the role of gap junction coupling in the progression of diabetes and identify mechanisms of gap junction regulation for potential therapies. PMID:25172942

Fluorescence recovery after photobleaching reveals regulation and distribution of connexin36 gap junction coupling within mouse islets of Langerhans.

PubMed

Farnsworth, Nikki L; Hemmati, Alireza; Pozzoli, Marina; Benninger, Richard K P

2014-10-15

The pancreatic islets are central to the maintenance of glucose homeostasis through insulin secretion. Glucose‐stimulated insulin secretion is tightly linked to electrical activity in β cells within the islet. Gap junctions, composed of connexin36 (Cx36), form intercellular channels between β cells, synchronizing electrical activity and insulin secretion. Loss of gap junction coupling leads to altered insulin secretion dynamics and disrupted glucose homeostasis. Gap junction coupling is known to be disrupted in mouse models of pre‐diabetes. Although approaches to measure gap junction coupling have been devised, they either lack cell specificity, suitable quantification of coupling or spatial resolution, or are invasive. The purpose of this study was to develop fluorescence recovery after photobleaching (FRAP) as a technique to accurately and robustly measure gap junction coupling in the islet. The cationic dye Rhodamine 123 was used with FRAP to quantify dye diffusion between islet β cells as a measure of Cx36 gap junction coupling. Measurements in islets with reduced Cx36 verified the accuracy of this technique in distinguishing between distinct levels of gap junction coupling. Analysis of individual cells revealed that the distribution of coupling across the islet is highly heterogeneous. Analysis of several modulators of gap junction coupling revealed glucose‐ and cAMP‐dependent modulation of gap junction coupling in islets. Finally, FRAP was used to determine cell population specific coupling, where no functional gap junction coupling was observed between α cells and β cells in the islet. The results of this study show FRAP to be a robust technique which provides the cellular resolution to quantify the distribution and regulation of Cx36 gap junction coupling in specific cell populations within the islet. Future studies utilizing this technique may elucidate the role of gap junction coupling in the progression of diabetes and identify mechanisms of gap junction regulation for potential therapies.

Effect of diffuser vane shape on the performance of a centrifugal compressor stage

NASA Astrophysics Data System (ADS)

Reddy, T. Ch Siva; Ramana Murty, G. V.; Prasad, M. V. S. S. S. M.

2014-04-01

The present paper reports the results of experimental investigations on the effect of diffuser vane shape on the performance of a centrifugal compressor stage. These studies were conducted on the chosen stage having a backward curved impeller of 500 mm tip diameter and 24.5 mm width and its design flow coefficient is ϕd=0.0535. Three different low solidity diffuser vane shapes namely uncambered aerofoil, constant thickness flat plate and circular arc cambered constant thickness plate were chosen as the variants for diffuser vane shape and all the three shapes have the same thickness to chord ratio (t/c=0.1). Flow coefficient, polytropic efficiency, total head coefficient, power coefficient and static pressure recovery coefficient were chosen as the parameters for evaluating the effect of diffuser vane shape on the stage performance. The results show that there is reasonable improvement in stage efficiency and total head coefficient with the use of the chosen diffuser vane shapes as compared to conventional vaneless diffuser. It is also noticed that the aero foil shaped LSD has shown better performance when compared to flat plate and circular arc profiles. The aerofoil vane shape of the diffuser blade is seen to be tolerant over a considerable range of incidence.

Estimating the spin diffusion length and the spin Hall angle from spin pumping induced inverse spin Hall voltages

NASA Astrophysics Data System (ADS)

Roy, Kuntal

2017-11-01

There exists considerable confusion in estimating the spin diffusion length of materials with high spin-orbit coupling from spin pumping experiments. For designing functional devices, it is important to determine the spin diffusion length with sufficient accuracy from experimental results. An inaccurate estimation of spin diffusion length also affects the estimation of other parameters (e.g., spin mixing conductance, spin Hall angle) concomitantly. The spin diffusion length for platinum (Pt) has been reported in the literature in a wide range of 0.5-14 nm, and in particular it is a constant value independent of Pt's thickness. Here, the key reasonings behind such a wide range of reported values of spin diffusion length have been identified comprehensively. In particular, it is shown here that a thickness-dependent conductivity and spin diffusion length is necessary to simultaneously match the experimental results of effective spin mixing conductance and inverse spin Hall voltage due to spin pumping. Such a thickness-dependent spin diffusion length is tantamount to the Elliott-Yafet spin relaxation mechanism, which bodes well for transitional metals. This conclusion is not altered even when there is significant interfacial spin memory loss. Furthermore, the variations in the estimated parameters are also studied, which is important for technological applications.

Molecular cell biology and physiology of solute transport

PubMed Central

Caplan, Michael J.; Seo-Mayer, Patricia; Zhang, Li

2010-01-01

Purpose of review An enormous body of research has been focused on exploring the mechanisms through which epithelial cells establish their characteristic polarity. It is clear that under normal circumstances cell–cell contacts mediated by the calcium-dependent adhesion proteins of the intercellular adhesion junctions are required to initiate complete polarization. Furthermore, formation of the tight, or occluding, junctions that limit paracellular permeability has long been thought to help to establish polarity by preventing the diffusion of membrane proteins between the two plasmalemmal domains. This review will discuss several selected kinases and protein complexes and highlight their relevance to transporting epithelial cell polarization. Recent findings Recent work has shed new light on the roles of junctional complexes in establishing and maintaining epithelial cell polarity. In addition, work from several laboratories, suggests that the formation of these junctions is tied to processes that regulate cellular energy metabolism. Summary Junctional complexes and energy sensing kinases constitute a novel class of machinery whose capacity to generate and modulate epithelial cell polarity is likely to have wide ranging and important physiological ramifications. PMID:18695392

Minimum entropy principle-based solar cell operation without a pn-junction and a thin CdS layer to extract the holes from the emitter

NASA Astrophysics Data System (ADS)

Böer, Karl W.

2016-10-01

The solar cell does not use a pn-junction to separate electrons from holes, but uses an undoped CdS layer that is p-type inverted when attached to a p-type collector and collects the holes while rejecting the backflow of electrons and thereby prevents junction leakage. The operation of the solar cell is determined by the minimum entropy principle of the cell and its external circuit that determines the electrochemical potential, i.e., the Fermi-level of the base electrode to the operating (maximum power point) voltage. It leaves the Fermi level of the metal electrode of the CdS unchanged, since CdS does not participate in the photo-emf. All photoelectric actions are generated by the holes excited from the light that causes the shift of the quasi-Fermi levels in the generator and supports the diffusion current in operating conditions. It is responsible for the measured solar maximum power current. The open circuit voltage (Voc) can approach its theoretical limit of the band gap of the collector at 0 K and the cell increases the efficiency at AM1 to 21% for a thin-film CdS/CdTe that is given as an example here. However, a series resistance of the CdS forces a limitation of its thickness to preferably below 200 Å to avoid unnecessary reduction in efficiency or Voc. The operation of the CdS solar cell does not involve heated carriers. It is initiated by the field at the CdS/CdTe interface that exceeds 20 kV/cm that is sufficient to cause extraction of holes by the CdS that is inverted to become p-type. Here a strong doubly charged intrinsic donor can cause a negative differential conductivity that switches-on a high-field domain that is stabilized by the minimum entropy principle and permits an efficient transport of the holes from the CdTe to the base electrode. Experimental results of the band model of CdS/CdTe solar cells are given and show that the conduction bands are connected in the dark, where the electron current must be continuous, and the valence bands are connected with light where the hole currents are dominant and must be continuous through the junction. The major shifts of the bands in operating conditions are self-adjusting by a change in the junction dipole momentum.

An Investigation into III-V Compounds to Reach 20% Efficiency with Minimum Cell Thickness in Ultrathin-Film Solar Cells

NASA Astrophysics Data System (ADS)

Haque, K. A. S. M. Ehteshamul; Galib, Md. Mehedi Hassan

2013-10-01

III-V single-junction solar cells have already achieved very high efficiency levels. However, their use in terrestrial applications is limited by the high fabrication cost. High-efficiency, ultrathin-film solar cells can effectively solve this problem, as their material requirement is minimum. This work presents a comparison among several III-V compounds that have high optical absorption capability as well as optimum bandgap (around 1.4 eV) for use as solar cell absorbers. The aim is to observe and compare the ability of these materials to reach a target efficiency level of 20% with minimum possible cell thickness. The solar cell considered has an n-type ZnSe window layer, an n-type Al0.1Ga0.9As emitter layer, and a p-type Ga0.5In0.5P back surface field (BSF) layer. Ge is used as the substrate. In the initial design, a p-type InP base was sandwiched between the emitter and the BSF layer, and the design parameters for the device were optimized by analyzing the simulation outcomes with ADEPT/F, a one-dimensional (1D) simulation tool. Then, the minimum cell thickness that achieves 20% efficiency was determined by observing the efficiency variation with cell thickness. Afterwards, the base material was changed to a few other selected III-V compounds, and for each case, the minimum cell thickness was determined in a similar manner. Finally, these cell thickness values were compared and analyzed to identify more effective base layer materials for III-V single-junction solar cells.

Photovoltaic characteristics of diffused P/+N bulk GaAs solar cells

NASA Technical Reports Server (NTRS)

Borrego, J. M.; Keeney, R. P.; Bhat, I. B.; Bhat, K. N.; Sundaram, L. G.; Ghandhi, S. K.

1982-01-01

The photovoltaic characteristics of P(+)N junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are described in this paper.Spectral response measurements were analyzed in detail and compared to a computer simulation in order to determine important material parameters. It is projected that proper optimization of the cell parameters can increase the efficiency of the cells from 12.2 percent to close to 20 percent.

Modeling the Total Dose Radiation Effects of Hg(1-x)Cd(x)Te Photodiodes Using Numerical Device Simulators

DTIC Science & Technology

1994-01-01

Dosimetry : Analysis of dosimetry in two dewar/liquid nitrogen systems. TIME Estimate: One hour for setup, irradiation and TLD reading/analysis. IV...point indicates both electron and hole trapping at the boundary ........................ 12 3.3 Relationship between current and dose for irradiated...peak value. Carriers are collected across the vertical junction within a diffusion length. Since the electron diffusion length is much larger than for

Reconstructing in-vivo reflectance spectrum of pigmented skin lesion by Monte Carlo simulation

NASA Astrophysics Data System (ADS)

Wang, Shuang; He, Qingli; Zhao, Jianhua; Lui, Harvey; Zeng, Haishan

2012-03-01

In dermatology applications, diffuse reflectance spectroscopy has been extensively investigated as a promising tool for the noninvasive method to distinguish melanoma from benign pigmented skin lesion (nevus), which is concentrated with the skin chromophores like melanin and hemoglobin. We carried out a theoretical study to examine melanin distribution in human skin tissue and establish a practical optical model for further pigmented skin investigation. The theoretical simulation was using junctional nevus as an example. A multiple layer skin optical model was developed on established anatomy structures of skin, the published optical parameters of different skin layers, blood and melanin. Monte Carlo simulation was used to model the interaction between excitation light and skin tissue and rebuild the diffuse reflectance process from skin tissue. A testified methodology was adopted to determine melanin contents in human skin based on in vivo diffuse reflectance spectra. The rebuild diffuse reflectance spectra were investigated by adding melanin into different layers of the theoretical model. One of in vivo reflectance spectra from Junctional nevi and their surrounding normal skin was studied by compare the ratio between nevus and normal skin tissue in both the experimental and simulated diffuse reflectance spectra. The simulation result showed a good agreement with our clinical measurements, which indicated that our research method, including the spectral ratio method, skin optical model and modifying the melanin content in the model, could be applied in further theoretical simulation of pigmented skin lesions.

Crystalline silicon photovoltaics via low-temperature TiO 2/Si and PEDOT/Si heterojunctions

NASA Astrophysics Data System (ADS)

Nagamatsu, Ken Alfred

The most important goals in developing solar cell technology are to achieve high power conversion efficiencies and lower costs of manufacturing. Solar cells based on crystalline silicon currently dominate the market because they can achieve high efficiency. However, conventional p-n junction solar cells require high-temperature diffusions of dopants, and conventional heterojunction cells based on amorphous silicon require plasma-enhanced deposition, both of which can add manufacturing costs. This dissertation investigates an alternative approach, which is to form crystalline-silicon-based solar cells using heterojunctions with materials that are easily deposited at low temperatures and without plasma enhancement, such as organic semiconductors and metal oxides. We demonstrate a heterojunction between the organic polymer, poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT), and crystalline silicon, which acts as a hole-selective contact and an alternative to a diffused p-n junction. We also present the use of a heterojunction between titanium dioxide and crystalline silicon as a passivating electron-selective contact. The Si/TiO2 heterojunction is demonstrated for the first time as a back-surface field in a crystalline silicon solar cell, and is incorporated into a PEDOT/Si device. The resulting PEDOT/Si/TiO2 solar cell represents an alternative to conventional silicon solar cells that rely on thermally-diffused junctions or plasma-deposited heterojunctions. Finally, we investigate the merits of using conductive networks of silver nanowires to enhance the photovoltaic performance of PEDOT/Si solar cells. The investigation of these materials and devices contributes to the growing body of work regarding crystalline silicon solar cells made with selective contacts.

Electrostatically tunable lateral MoTe2 p-n junction for use in high-performance optoelectronics.

PubMed

Wang, Zhenxing; Wang, Feng; Yin, Lei; Huang, Yun; Xu, Kai; Wang, Fengmei; Zhan, Xueying; He, Jun

2016-07-21

Because of their ultimate thickness, layered structure and high flexibility, pn junctions based on layered two-dimensional semiconductors have been attracting increasing attention recently. In this study, for the first time, we fabricated lateral pn junctions (LPNJs) based on ultrathin MoTe2 by introducing two separated electrostatic back gates, and investigated their electronic and photovoltaic performance. Pn, np, nn, and pp junctions can be easily realized by modulating the conductive channel type using gate voltages with different polarities. Strong rectification effects were observed in the pn and np junctions and the rectification ratio reached ∼5 × 10(4). Importantly, we find a unique phenomenon that the parameters for MoTe2 LPNJs experience abrupt changes during the transition from p to n or n to p. Furthermore, a high performance photovoltaic device with a filling factor of above 51% and electrical conversion efficiency (η) of around 0.5% is achieved. Our findings are of importance to comprehensively understand the electronic and optoelectronic properties of MoTe2 and may further open up novel electronic and optoelectronic device applications.

Silicon solar cell fabrication technology

NASA Technical Reports Server (NTRS)

Stafsudd, O. M.

1979-01-01

The laser cell scanner was used to characterize a number of solar cells made in various materials. An electron beam-induced current (EBIC) study was performed using a stereoscan scanning electron microscope. Planar p-n junctions were analyzed. A theory for the EBIC based on the analytical solution of the ambipolar diffusion equation under the influence of electron beam excitation parameter z (which is related to beam penetration), the junction depth Z sub j, the beam current and the surface recombination, was formulated and tested. The effect of a grain boundary was studied.

Ion Diffusion-Directed Assembly Approach to Ultrafast Coating of Graphene Oxide Thick Multilayers.

PubMed

Zhao, Xiaoli; Gao, Weiwei; Yao, Weiquan; Jiang, Yanqiu; Xu, Zhen; Gao, Chao

2017-10-24

The layer-by-layer (LbL) assembly approach has been widely used to fabricate multilayer coatings on substrates with multiple cycles, whereas it is hard to access thick films efficiently. Here, we developed an ion diffusion-directed assembly (IDDA) strategy to rapidly make multilayer thick coatings in one step on arbitrary substrates. To achieve multifunctional coatings, graphene oxide (GO) and metallic ions were selected as the typical building blocks and diffusion director in IDDA, respectively. With diffusion of metallic ions from substrate to negatively charged GO dispersion spontaneously (i.e., from high-concentration region to low-concentration region), GO was assembled onto the substrate sheet-by-sheet via sol-gel transformation. Because metallic ions with size of subnanometers can diffuse directionally and freely in the aqueous dispersion, GO was coated on the substrate efficiently, giving rise to films with desired thickness up to 10 μm per cycle. The IDDA approach shows three main merits: (1) high efficiency with a μm-scale coating rate; (2) controllability over thickness and evenness; and (3) generality for substrates of plastics, metals and ceramics with any shapes and morphologies. With these merits, IDDA strategy was utilized in the efficient fabrication of functional graphene coatings that exhibit outstanding performance as supercapacitors, electromagnetic interference shielding textiles, and anticorrosion coatings. This IDDA approach can be extended to other building blocks including polymers and colloidal nanoparticles, promising for the scalable production and application of multifunctional coatings.

The architecture of the chess player's brain.

PubMed

Hänggi, Jürgen; Brütsch, Karin; Siegel, Adrian M; Jäncke, Lutz

2014-09-01

The game of chess can be seen as a typical example for an expertise task requiring domain-specific training and experience. Despite intensive behavioural studies the neural underpinnings of chess performance and expertise are not entirely understood. A few functional neuroimaging studies have shown that expert chess players recruit different psychological functions and activate different brain areas while they are engaged in chess-related activities. Based on this functional literature, we predicted to find morphological differences in a network comprised by parietal and frontal areas and especially the occipito-temporal junction (OTJ), fusiform gyrus, and caudate nucleus. Twenty expert chess players and 20 control subjects were investigated using voxel-based and surface-based morphometry as well as diffusion tensor imaging. Grey matter volume and cortical thickness were reduced in chess players compared with those of control men in the OTJ and precunei. The volumes of both caudate nuclei were not different between groups, but correlated inversely with the years of chess playing experience. Mean diffusivity was increased in chess players compared with that of controls in the left superior longitudinal fasciculus and the Elo score (a chess tournament ranking) was inversely related to mean diffusivity within the right superior longitudinal fasciculus. To the best of our knowledge we showed for the first time that there are specific differences in grey and white matter morphology between chess players and control subjects in brain regions associated with cognitive functions important for playing chess. Whether these anatomical alterations are the cause or consequence of the intensive and long-term chess training and practice remains to be shown in future studies. Copyright © 2014 Elsevier Ltd. All rights reserved.

Correlation of root dentin thickness and length of roots in mesial roots of mandibular molars.

PubMed

Dwivedi, Shweta; Dwivedi, Chandra Dhar; Mittal, Neelam

2014-09-01

The purpose of this study was to analyze the relation of tooth length and distal wall thickness of mesial roots in mandibular molars at different locations (ie, 2 mm below the furcation and at the junction between the middle and apical third). Forty-five mandibular first molars were taken, and the length of each tooth was measured. Then, specimens were divided into three groups according to their length: group I-long (24.2 mm ± 1.8), group II-medium (21 mm ± 1.5) and group III-short (16.8 mm ± 1.8). mesial root of each marked at two levels - at 2 mm below the furcation as well as at junction of apical and middle third of roots. The minimum thickness of the distal root dentine associated with the buccal and lingual canals of the mesial roots was measured, The distance between the buccal and lingual canals and the depth of concavity in the distal surface of the mesial roots were also measured. Statistical analysis was performed by using analysis of variance and the Student-Newman-Keuls test. The minimum thickness of the distal wall of the mesiobuccal canal was significantly different (P < .001) between groups 1 (long) and 3 (short). Distal wall thickness of the mesiobuccal root and distal concavity of the mesial root of mandibular first molars were found to be thinner in longer teeth compared with shorter teeth. Copyright © 2014 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

Cortical thickness and folding deficits in conduct-disordered adolescents

PubMed Central

Hyatt, Christopher J.; Haney-Caron, Emily; Stevens, Michael C.

2012-01-01

Background Studies of pediatric conduct disorder (CD) have described frontal and temporal lobe structural abnormalities that parallel findings in antisocial adults. The purpose of this study was to examine previously unexplored cortical thickness and folding as markers for brain abnormalities in “pure CD”-diagnosed adolescents. Based on current fronto-temporal theories, we hypothesized that CD youth would have thinner cortex or less cortical folding in temporal and frontal lobes than control subjects. Methods We obtained T1-weighted brain structure images from n=24 control and n=19 CD participants aged 12–18 years, matched by overall gender and age. We measured group differences in cortical thickness and local gyrification index (regional cortical folding measure) using surface-based morphometry with clusterwise correction for multiple comparisons. Results CD participants, when compared with controls, showed both reduced cortical thickness and folding. Thinner cortex was located primarily in posterior brain regions, including left superior temporal and parietal lobes, temporoparietal junction and paracentral lobule, right superior temporal and parietal lobes, temporoparietal junction and precuneus. Folding deficits were located mainly in anterior brain regions and included left insula, ventro- and dorsomedial prefrontal, anterior cingulate and orbitofrontal cortices, temporal lobe, right superior frontal and parietal lobes and paracentral lobule. Conclusions Our findings generally agree with previous CD volumetric studies, but here show the unique contributions of cortical thickness and folding to gray matter reductions in pure CD in different brain regions. PMID:22209639

Induced-Charge Enhancement of the Diffusion Potential in Membranes with Polarizable Nanopores

NASA Astrophysics Data System (ADS)

Ryzhkov, I. I.; Lebedev, D. V.; Solodovnichenko, V. S.; Shiverskiy, A. V.; Simunin, M. M.

2017-12-01

When a charged membrane separates two salt solutions of different concentrations, a potential difference appears due to interfacial Donnan equilibrium and the diffusion junction. Here, we report a new mechanism for the generation of a membrane potential in polarizable conductive membranes via an induced surface charge. It results from an electric field generated by the diffusion of ions with different mobilities. For uncharged membranes, this effect strongly enhances the diffusion potential and makes it highly sensitive to the ion mobilities ratio, electrolyte concentration, and pore size. Theoretical predictions on the basis of the space-charge model extended to polarizable nanopores fully agree with experimental measurements in KCl and NaCl aqueous solutions.

Lateral carrier diffusion and current gain in terahertz InGaAs/InP double-heterojunction bipolar transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiang, Han-Wei; Rode, Johann C.; Choudhary, Prateek

2014-01-21

The DC current gain in In{sub 0.53}Ga{sub 0.47}As/InP double-heterojunction bipolar transistors is computed based on a drift-diffusion model, and is compared with experimental data. Even in the absence of other scaling effects, lateral diffusion of electrons to the base Ohmic contacts causes a rapid reduction in DC current gain as the emitter junction width and emitter-base contact spacing are reduced. The simulation and experimental data are compared in order to examine the effect of carrier lateral diffusion on current gain. The impact on current gain due to device scaling and approaches to increase current gain are discussed.

Elasticity of a soap film junction

NASA Astrophysics Data System (ADS)

Elias, F.; Janiaud, E.; Bacri, J.-C.; Andreotti, B.

2014-03-01

We investigate the elasticity of an isolated, threefold junction of soap films (Plateau border), which displays static undulations when liquid rapidly flows into it. By analyzing the shape of the Plateau border (thickness R and transverse displacement) as a function of the liquid flow rate Q, we show experimentally and theoretically that the elasticity of the Plateau border is dominated by the bending of the soap films pulling on the Plateau border. In this asymptotic regime, the undulation wavelength obeys the scaling law ˜Q2 R-2 and the decay length ˜Q2 R-4.

Diffused junction p(+)-n solar cells in bulk GaAs. I Fabrication and cell performance

NASA Technical Reports Server (NTRS)

Bhat, I.; Bhat, K. N.; Mathur, G.; Borrego, J. M.; Ghandhi, S. K.

1984-01-01

This paper describes the fabrication of solar cells made by a simple open tube p(+)-diffusion into bulk n-GaAs. In addition, cell performance is provided as an indicator of the quality of bulk GaAs for this application. Initial results using this technique (12.2 percent efficiency at AM1 for 0.5 sq cm cells) are promising, and indicate directions for materials improvement. It is shown that the introduction of the diffusant (zinc) with point defects significantly affects the material properties and results in an increase in current capability.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryu, Yong -Sang; Wittenberg, Nathan J.; Suh, Jeng -Hun

We show that the selective localization of cholesterol-rich domains and associated ganglioside receptors prefer to occur in the monolayer across continuous monolayer-bilayer junctions (MBJs) in supported lipid membranes. For the MBJs, glass substrates were patterned with poly(dimethylsiloxane) (PDMS) oligomers by thermally-assisted contact printing, leaving behind 3 nm-thick PDMS patterns. The hydrophobicity of the transferred PDMS patterns was precisely tuned by the stamping temperature. Lipid monolayers were formed on the PDMS patterned surface while lipid bilayers were on the bare glass surface. Due to the continuity of the lipid membranes over the MBJs, essentially free diffusion of lipids was allowed betweenmore » the monolayer on the PDMS surface and the upper leaflet of the bilayer on the glass substrate. The preferential localization of sphingomyelin, ganglioside GM1 and cholesterol in the monolayer region enabled to develop raft microdomains through coarsening of nanorafts. Furthermore, our methodology provides a simple and effective scheme of non-disruptive manipulation of the chemical landscape associated with lipid phase separations, which leads to more sophisticated applications in biosensors and as cell culture substrates.« less

Orientational anisotropy and interfacial transport in polycrystals

NASA Astrophysics Data System (ADS)

Moghadam, M. M.; Rickman, J. M.; Harmer, M. P.; Chan, H. M.

2016-04-01

Interfacial diffusion is governed to a large degree by geometric parameters that are determined by crystallographic orientation. In this study, we assess the impact of orientational anisotropy on mass transport at internal interfaces, focusing on the role of preferred crystallographic orientation (i.e., texture) on mass diffusion in a polycrystal. More specifically, we perform both numerical and analytical studies of steady-state diffusion for polycrystals having various grain-orientation distributions. By relating grain misorientation to grain-boundary energies and, via the Borisov relation, to the diffusivity, we link microstructure variability to kinetics. Our aim is to correlate shape features of the orientation distribution, such as the location and shapes of peaks, with the calculated effective diffusivity. Finally, we discuss the role of crystallographic constraints, such as those associated with grain junctions, in determining the effective diffusivity of a polycrystal.

Quantification of gap junction selectivity.

PubMed

Ek-Vitorín, Jose F; Burt, Janis M

2005-12-01

Gap junctions, which are essential for functional coordination and homeostasis within tissues, permit the direct intercellular exchange of small molecules. The abundance and diversity of this exchange depends on the number and selectivity of the comprising channels and on the transjunctional gradient for and chemical character of the permeant molecules. Limited knowledge of functionally significant permeants and poor detectability of those few that are known have made it difficult to define channel selectivity. Presented herein is a multifaceted approach to the quantification of gap junction selectivity that includes determination of the rate constant for intercellular diffusion of a fluorescent probe (k2-DYE) and junctional conductance (gj) for each junction studied, such that the selective permeability (k2-DYE/gj) for dyes with differing chemical characteristics or junctions with differing connexin (Cx) compositions (or treatment conditions) can be compared. In addition, selective permeability can be correlated using single-channel conductance when this parameter is also measured. Our measurement strategy is capable of detecting 1) rate constants and selective permeabilities that differ across three orders of magnitude and 2) acute changes in that rate constant. Using this strategy, we have shown that 1) the selective permeability of Cx43 junctions to a small cationic dye varied across two orders of magnitude, consistent with the hypothesis that the various channel configurations adopted by Cx43 display different selective permeabilities; and 2) the selective permeability of Cx37 vs. Cx43 junctions was consistently and significantly lower.

Effect of sound on gap-junction-based intercellular signaling: Calcium waves under acoustic irradiation.

PubMed

Deymier, P A; Swinteck, N; Runge, K; Deymier-Black, A; Hoying, J B

2015-01-01

We present a previously unrecognized effect of sound waves on gap-junction-based intercellular signaling such as in biological tissues composed of endothelial cells. We suggest that sound irradiation may, through temporal and spatial modulation of cell-to-cell conductance, create intercellular calcium waves with unidirectional signal propagation associated with nonconventional topologies. Nonreciprocity in calcium wave propagation induced by sound wave irradiation is demonstrated in the case of a linear and a nonlinear reaction-diffusion model. This demonstration should be applicable to other types of gap-junction-based intercellular signals, and it is thought that it should be of help in interpreting a broad range of biological phenomena associated with the beneficial therapeutic effects of sound irradiation and possibly the harmful effects of sound waves on health.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matvejeff, M., E-mail: mikko.matvejeff@picosun.com; Department of Chemistry, Aalto University, Kemistintie 1, 02150 Espoo; Ahvenniemi, E.

We study magnetic coupling between hole-doped manganite layers separated by either a perovskite or a rock-salt barrier of variable thickness. Both the type and the quality of the interface have a strong impact on the minimum critical barrier thickness where the manganite layers become magnetically decoupled. A rock-salt barrier layer only 1 unit cell (0.5 nm) thick remains insulating and is able to magnetically de-couple the electrode layers. The technique can therefore be used for developing high-performance planar oxide electronic devices such as magnetic tunnel junctions and quantum well structures that depend on magnetically and electronically sharp heterointerfaces.

Microstructural studies of organic spin valves and superconducting vortex ratchets

NASA Astrophysics Data System (ADS)

Liu, Yaohua

Thin film's microstructure plays important roles in their transport properties. Spin transport in organic semiconductors (OSCs) were studied using spin valves structures, with Fe and Co as the top and bottom ferromagnetic (FM) contacts, respectively. Magnetoresistance (MR) effects have been observed up to room temperature in junctions based on an electron-carrying OSC, tris(8-hyroxyquinoline) aluminum (Alq3) and a hole-carrying OSC, copper phthalocyanine (CuPc). However, junctions based on two other electron-carrying OSCs with higher lateral mobilities showed weaker spin transport effects. Morphological studies indicated that these high mobility films had rougher surfaces than either Alq3 or CuPc, therefore the degradation may originate from enhanced scattering due to the rougher FM/OSC interfaces. FM/OSC interfaces were studied in detail in Alga-based devices. These multilayer films have well-defined layer structures with modest average chemical roughness (3-5 nm) at the FM/A1q3 interfaces. Reflectometry shows that larger MR effects are correlated with sharper FM/OSC interfaces and a magnetically dead layer at the Alq3/Fe boundary. Combined with magnetotransport and magnetometery studies, our results support spin injection and transport in Alq3. A lower bound for the spin diffusion length in Alq3 was estimated as 43 +/- 5 nm at 80 K. However, the subtle correlations between microstructure and magnetotransport indicate the importance of interfacial effects. Thin film's microstructures can also be engineered to study interesting physics phenomena. We studied superconducting vortex motion, especially the vortex ratchet effect, in one-dimensional thickness-modulated granular Al films. The potential profile for a single vortex due to thickness modulation was estimated using the Bardeen-Stephen model, which agrees with the transport results. For a sample with a nearly sawtooth potential profile, the rectification velocity showed a maximum around 4.4B1, where B1 is the first matching field, similar to simulations. We also observed reverse vortex rectification, which originates from the interplay between the pinning potential and vortex-vortex interactions. More interestingly, the rectification effects showed clear frequency dependence at driving frequencies as low as 10 kHz, suggesting the failure of the heavily overdamped model.

Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling

NASA Astrophysics Data System (ADS)

Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin

2011-12-01

Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (<10 nm) in electrical characterization3 that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission4,5, we developed a numerical model for the tip-sample Schottky contact4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).

Analysis of the electron-beam-induced current of a polycrystalline p-n junction when the diffusion lengths of the material on either side of a grain boundary differ

NASA Technical Reports Server (NTRS)

Von Roos, O.; Luke, K. L.

1984-01-01

The short circuit current generated by the electron beam of a scanning electron microscope in p-n junctions is reduced by enhanced recombination at grain boundaries in polycrystalline material. Frequently, grain boundaries separate the semiconductor into regions possessing different minority carrier life times. This markedly affects the short circuit current I(sc) as a function of scanning distance from the grain boundary. It will be shown theoretically that (1) the minimum of the I(sc) in crossing the grain boundary with the scanning electron beam is shifted away from the grain boundary toward the region with smaller life time (shorter diffusion length), (2) the magnitude of the minimum differs markedly from those calculated under the assumption of equal diffusion lengths on either side of the grain boundary, and (3) the minimum disappears altogether for small surface recombination velocities (s less than 10,000 cm/s). These effects become negligible, however, for large recombination velocities s at grain boundaries. For p-type silicon this happens for s not less than 100,000 cm/s.

Diffusion-Driven Charge Transport in Light Emitting Devices

PubMed Central

Oksanen, Jani; Suihkonen, Sami

2017-01-01

Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics. PMID:29231900

InP tunnel junction for InGaAs/InP tandem solar cells

NASA Technical Reports Server (NTRS)

Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

1995-01-01

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.

Computational Analysis on Performance of Thermal Energy Storage (TES) Diffuser

NASA Astrophysics Data System (ADS)

Adib, M. A. H. M.; Adnan, F.; Ismail, A. R.; Kardigama, K.; Salaam, H. A.; Ahmad, Z.; Johari, N. H.; Anuar, Z.; Azmi, N. S. N.

2012-09-01

Application of thermal energy storage (TES) system reduces cost and energy consumption. The performance of the overall operation is affected by diffuser design. In this study, computational analysis is used to determine the thermocline thickness. Three dimensional simulations with different tank height-to-diameter ratio (HD), diffuser opening and the effect of difference number of diffuser holes are investigated. Medium HD tanks simulations with double ring octagonal diffuser show good thermocline behavior and clear distinction between warm and cold water. The result show, the best performance of thermocline thickness during 50% time charging occur in medium tank with height-to-diameter ratio of 4.0 and double ring octagonal diffuser with 48 holes (9mm opening ~ 60%) acceptable compared to diffuser with 6mm ~ 40% and 12mm ~ 80% opening. The conclusion is computational analysis method are very useful in the study on performance of thermal energy storage (TES).

MYONEURAL JUNCTIONS OF TWO ULTRASTRUCTURALLY DISTINCT TYPES IN EARTHWORM BODY WALL MUSCLE

PubMed Central

Rosenbluth, Jack

1972-01-01

The longitudinal muscle of the earthworm body wall is innervated by nerve bundles containing axons of two types which form two corresponding types of myoneural junction with the muscle fibers Type I junctions resemble cholinergic neuromuscular junctions of vertebrate skeletal muscle and are characterized by three features: (a) The nerve terminals contain large numbers of spherical, clear, ∼500 A vesicles plus a small number of larger dense-cored vesicles (b) The junctional gap is relatively wide (∼900 A), and it contains a basement membrane-like material, (c) The postjunctional membrane, although not folded, displays prominent specializations on both its external and internal surfaces The cytoplasmic surface is covered by a dense matrix ∼200 A thick which appears to be the site of insertion of fine obliquely oriented cytoplasmic filaments The external surface exhibits rows of projections ∼200 A long whose bases consist of hexagonally arrayed granules seated in the outer dense layer of the plasma membrane The concentration of these hexagonally disposed elements corresponds to the estimated concentration of both receptor sites and acetylcholinesterase sites at cholinergic junctions elsewhere. Type II junctions resemble the adrenergic junctions in vertebrate smooth muscle and exhibit the following structural characteristics: (a) The nerve fibers contain predominantly dense-cored vesicles ∼1000 A in diameter (b) The junctional gap is relatively narrow (∼150 A) and contains no basement membrane-like material, (c) Postjunctional membrane specialization is minimal. It is proposed that the structural differences between the two types of myoneural junction reflect differences in the respective transmitters and corresponding differences in the mechanisms of transmitter action and/or inactivation. PMID:5044759

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Baranov, Artem I.; Gudovskikh, Alexander S.; Kudryashov, Dmitry A.; Lazarenko, Alexandra A.; Morozov, Ivan A.; Mozharov, Alexey M.; Nikitina, Ekaterina V.; Pirogov, Evgeny V.; Sobolev, Maxim S.; Zelentsov, Kirill S.; Egorov, Anton Yu.; Darga, Arouna; Le Gall, Sylvain; Kleider, Jean-Paul

2018-04-01

The defect properties of InGaAsN dilute nitrides grown as sub-monolayer digital alloys (SDAs) by molecular beam epitaxy for photovoltaic application were studied by space charge capacitance spectroscopy. Alloys of i-InGaAsN (Eg = 1.03 eV) were lattice-matched grown on GaAs wafers as a superlattice of InAs/GaAsN with one monolayer of InAs (<0.5 nm) between wide GaAsN (7-12 nm) layers as active layers in single-junction solar cells. Low p-type background doping was demonstrated at room temperature in samples with InGaAsN layers 900 nm and 1200 nm thick (less 1 × 1015 cm-3). According to admittance spectroscopy and deep-level transient spectroscopy measurements, the SDA approach leads to defect-free growth up to a thickness of 900 nm. An increase in thickness to 1200 nm leads to the formation of non-radiative recombination centers with an activation energy of 0.5 eV (NT = 8.4 × 1014 cm-3) and a shallow defect level at 0.20 eV. The last one leads to the appearance of additional doping, but its concentration is low (NT = 5 × 1014 cm-3) so it does not affect the photoelectric properties. However, further increase in thickness to 1600 nm, leads to significant growth of its concentration to (3-5) × 1015 cm-3, while the concentration of deep levels becomes 1.3 × 1015 cm-3. Therefore, additional free charge carriers appearing due to ionization of the shallow level change the band diagram from p-i-n to p-n junction at room temperature. It leads to a drop of the external quantum efficiency due to the effect of pulling electric field decrease in the p-n junction and an increased number of non-radiative recombination centers that negatively impact lifetimes in InGaAsN.

Tunneling-Electron-Induced Light Emission from Single Gold Nanoclusters.

PubMed

Yu, Arthur; Li, Shaowei; Czap, Gregory; Ho, W

2016-09-14

The coupling of tunneling electrons with the tip-nanocluster-substrate junction plasmon was investigated by monitoring light emission in a scanning tunneling microscope (STM). Gold atoms were evaporated onto the ∼5 Å thick Al2O3 thin film grown on the NiAl (110) surface where they formed nanoclusters 3-7 nm wide. Scanning tunneling spectroscopy (STS) of these nanoclusters revealed quantum-confined electronic states. Spatially resolved photon imaging showed localized emission hot spots. Size dependent study and light emission from nanocluster dimers further support the viewpoint that coupling of tunneling electrons to the junction plasmon is the main radiative mechanism. These results showed the potential of the STM to reveal the electronic and optical properties of nanoscale metallic systems in the confined geometry of the tunnel junction.

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grezes, C.; Alzate, J. G.; Cai, X.

2016-01-04

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memorymore » and logic integrated circuits.« less

Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Müller, Ralph, E-mail: ralph.mueller@ise.fraunhofer.de; Schrof, Julian; Reichel, Christian

2014-09-08

The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implantedmore » phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674 mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.« less

Intercellular Diffusion of a Fluorescent Sucrose Analog via the Septal Junctions in a Filamentous Cyanobacterium

PubMed Central

Nürnberg, Dennis J.; Mariscal, Vicente; Bornikoel, Jan; Nieves-Morión, Mercedes; Krauß, Norbert; Herrero, Antonia

2015-01-01

ABSTRACT Many filamentous cyanobacteria produce specialized nitrogen-fixing cells called heterocysts, which are located at semiregular intervals along the filament with about 10 to 20 photosynthetic vegetative cells in between. Nitrogen fixation in these complex multicellular bacteria depends on metabolite exchange between the two cell types, with the heterocysts supplying combined-nitrogen compounds but dependent on the vegetative cells for photosynthetically produced carbon compounds. Here, we used a fluorescent tracer to probe intercellular metabolite exchange in the filamentous heterocyst-forming cyanobacterium Anabaena sp. strain PCC 7120. We show that esculin, a fluorescent sucrose analog, is incorporated by a sucrose import system into the cytoplasm of Anabaena cells. The cytoplasmic esculin is rapidly and reversibly exchanged across vegetative-vegetative and vegetative-heterocyst cell junctions. Our measurements reveal the kinetics of esculin exchange and also show that intercellular metabolic communication is lost in a significant fraction of older heterocysts. SepJ, FraC, and FraD are proteins located at the intercellular septa and are suggested to form structures analogous to gap junctions. We show that a ΔsepJ ΔfraC ΔfraD triple mutant shows an altered septum structure with thinner septa but a denser peptidoglycan layer. Intercellular diffusion of esculin and fluorescein derivatives is impaired in this mutant, which also shows a greatly reduced frequency of nanopores in the intercellular septal cross walls. These findings suggest that FraC, FraD, and SepJ are important for the formation of junctional structures that constitute the major pathway for feeding heterocysts with sucrose. PMID:25784700

Atomically Thin Al2O3 Films for Tunnel Junctions

NASA Astrophysics Data System (ADS)

Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

2017-06-01

Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

Inversion layer solar cell fabrication and evaluation. [measurement of response of inversion layer solar cell to light of different wavelengths

NASA Technical Reports Server (NTRS)

Call, R. L.

1973-01-01

Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. This charged layer was supplied through three mechanisms: (1) applying a positive potential to a transparent electrode separated from the silicon surface by a dielectric, (2) contaminating the oxide layer with positive ions, and (3) forming donor surface states that leave a positive charge on the surface. A movable semi-infinite shadow delineated the extent of sensitivity of the cell due to the inversion region. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.

Permeation of halide anions through phospholipid bilayers occurs by the solubility-diffusion mechanism

NASA Technical Reports Server (NTRS)

Paula, S.; Volkov, A. G.; Deamer, D. W.

1998-01-01

Two alternative mechanisms are frequently used to describe ionic permeation of lipid bilayers. In the first, ions partition into the hydrophobic phase and then diffuse across (the solubility-diffusion mechanism). The second mechanism assumes that ions traverse the bilayer through transient hydrophilic defects caused by thermal fluctuations (the pore mechanism). The theoretical predictions made by both models were tested for halide anions by measuring the permeability coefficients for chloride, bromide, and iodide as a function of bilayer thickness, ionic radius, and sign of charge. To vary the bilayer thickness systematically, liposomes were prepared from monounsaturated phosphatidylcholines (PC) with chain lengths between 16 and 24 carbon atoms. The fluorescent dye MQAE (N-(ethoxycarbonylmethyl)-6-methoxyquinolinium bromide) served as an indicator for halide concentration inside the liposomes and was used to follow the kinetics of halide flux across the bilayer membranes. The observed permeability coefficients ranged from 10(-9) to 10(-7) cm/s and increased as the bilayer thickness was reduced. Bromide was found to permeate approximately six times faster than chloride through bilayers of identical thickness, and iodide permeated three to four times faster than bromide. The dependence of the halide permeability coefficients on bilayer thickness and on ionic size were consistent with permeation of hydrated ions by a solubility-diffusion mechanism rather than through transient pores. Halide permeation therefore differs from that of a monovalent cation such as potassium, which has been accounted for by a combination of the two mechanisms depending on bilayer thickness.

Interface structure in nanoscale multilayers near continuous-to-discontinuous regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pradhan, P. C.; Majhi, A.; Nayak, M., E-mail: mnayak@rrcat.gov.in

2016-07-28

Interfacial atomic diffusion, reaction, and formation of microstructure in nanoscale level are investigated in W/B{sub 4}C multilayer (ML) system as functions of thickness in ultrathin limit. Hard x-ray reflectivity (XRR) and x-ray diffuse scattering in conjunction with x-ray absorption near edge spectroscopy (XANES) in soft x-ray and hard x-ray regimes and depth profiling x-ray photoelectron spectroscopy (XPS) have been used to precisely evaluate detailed interfacial structure by systematically varying the individual layer thickness from continuous-to-discontinuous regime. It is observed that the interfacial morphology undergoes an unexpected significant modification as the layer thickness varies from continuous-to-discontinuous regime. The interfacial atomic diffusionmore » increases, the physical density of W layer decreases and that of B{sub 4}C layer increases, and further more interestingly the in-plane correlation length decreases substantially as the layer thickness varies from continuous-to-discontinuous regime. This is corroborated using combined XRR and x-ray diffused scattering analysis. XANES and XPS results show formation of more and more tungsten compounds at the interfaces as the layer thickness decreases below the percolation threshold due to increase in the contact area between the elements. The formation of compound enhances to minimize certain degree of disorder at the interfaces in the discontinuous region that enables to maintain the periodic structure in ML. The degree of interfacial atomic diffusion, interlayer interaction, and microstructure is correlated as a function of layer thickness during early stage of film growth.« less

Negative tunneling magnetoresistance of Fe/MgO/NiO/Fe magnetic tunnel junction: Role of spin mixing and interface state

NASA Astrophysics Data System (ADS)

Zhang, Y.; Yan, X. H.; Guo, Y. D.; Xiao, Y.

2017-08-01

Motivated by a recent tunneling magnetoresistance (TMR) measurement in which the negative TMR is observed in MgO/NiO-based magnetic tunnel junctions (MTJs), we have performed systematic calculations of transmission, current, and TMR of Fe/MgO/NiO/Fe MTJ with different thicknesses of NiO and MgO layers based on noncollinear density functional theory and non-equilibrium Green's function theory. The calculations show that, as the thickness of NiO and MgO layers is small, the negative TMR can be obtained which is attributed to the spin mixing effect and interface state. However, in the thick MTJ, the spin-flipping scattering becomes weaker, and thus, the MTJs recover positive TMR. Based on our theoretical results, we believe that the interface state at Fe/NiO interface and the spin mixing effect induced by noncollinear interfacial magnetization will play important role in determining transmission and current of Fe/MgO/NiO/Fe MTJ. The results reported here will be important in understanding the electron tunneling in MTJ with the barrier made by transition metal oxide.

Model for threading dislocations in metamorphic tandem solar cells on GaAs (001) substrates

NASA Astrophysics Data System (ADS)

Song, Yifei; Kujofsa, Tedi; Ayers, John E.

2018-02-01

We present an approximate model for the threading dislocations in III-V heterostructures and have applied this model to study the defect behavior in metamorphic triple-junction solar cells. This model represents a new approach in which the coefficient for second-order threading dislocation annihilation and coalescence reactions is considered to be determined by the length of misfit dislocations, LMD, in the structure, and we therefore refer to it as the LMD model. On the basis of this model we have compared the average threading dislocation densities in the active layers of triple junction solar cells using linearly-graded buffers of varying thicknesses as well as S-graded (complementary error function) buffers with varying thicknesses and standard deviation parameters. We have shown that the threading dislocation densities in the active regions of metamorphic tandem solar cells depend not only on the thicknesses of the buffer layers but on their compositional grading profiles. The use of S-graded buffer layers instead of linear buffers resulted in lower threading dislocation densities. Moreover, the threading dislocation densities depended strongly on the standard deviation parameters used in the S-graded buffers, with smaller values providing lower threading dislocation densities.

Retinal toxicity related to hydroxychloroquine in patients with systemic lupus erythematosus and rheumatoid arthritis.

PubMed

Telek, Hande Husniye; Yesilirmak, Nilufer; Sungur, Gulten; Ozdemir, Yaprak; Yesil, Nesibe Karahan; Ornek, Firdevs

2017-12-01

To compare the retinal toxicity due to hydroxychloroquine (HCQ) use in patients with systemic lupus erythematosus (SLE) and rheumatoid arthritis (RA) using multifocal electroretinography (mfERG), fundus autofluorescence (FAF) and optical coherence tomography (OCT). Patients who were using HCQ due to SLE and RA, and healthy subjects evaluated in this study. Central foveal thickness (CFT), inner-outer segment (IS-OS) junction irregularity, retinal nerve fiber layer thickness, mfERG and FAF measurements were performed to evaluate retinal toxicity. Study included 35 eyes of 35 SLE patients, 40 eyes of 40 RA patients and 20 eyes of 20 healthy subjects. In SLE group, retinal abnormality was found in three eyes with mfERG, in one eye with FAF and in four eyes with OCT. In RA group, retinal abnormality was found in 10 eyes with mfERG, in five eyes with FAF and in nine eyes with OCT. A statistically significant difference was found with respect to mfERG between "eyes with abnormal responses and without abnormal responses" and "eyes with abnormal responses and controls" (p < 0.05). A statistically significant difference was found with respect to CFT between "eyes with IS-OS junction irregularities and without IS-OS junction irregularities" and "eyes with/without IS-OS junction irregularities and controls" (p < 0.05). The use of HCQ seems to cause retinal toxicity more often in RA patients compared to SLE patients. For the early detection of retinal changes, OCT and mfERG can be used as screening tools due to their higher sensitivity rates compared to other tests.

Magnetization reversal mechanism of magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Liu, Cun-Ye; Li, Jian; Wang, Yue; Chen, Jian-Yong; Xu, Qing-Yu; Ni, Gang; Sang, Hai; Du, You-Wei

2002-01-01

Using the ion-beam-sputtering technique, we have fabricated Fe/Al2O3/Fe magnetic tunnelling junctions (MTJs). We have observed double-peaked shapes of curves, which have a level summit and a symmetrical feature, showing the magnetoresistance of the junction as a function of applied field. We have measured the tunnel conductance of MTJs which have insulating layers of different thicknesses. We have studied the dependence of the magnetoresistance of MTJs on tunnel conductance. The microstructures of hard- and soft-magnetic layers and interfaces of ferromagnets and insulators were probed. Analysing the influence of MJT microstructures, including those having clusters or/and granules in magnetic and non-magnetic films, a magnetization reversal mechanism (MRM) is proposed, which suggests that the MRM of tunnelling junctions may be explained by using a group-by-group reversal model of magnetic moments of the mesoscopical particles. We discuss the influence of MTJ microstructures, including those with clusters or/and granules in the ferromagnetic and non-magnetic films, on the MRM.

Low resistance tunnel junctions with remote plasma underoxidized thick barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferreira, R.; Freitas, P.P.; MacKenzie, M.

2005-05-15

Low resistance tunnel junctions suitable for >200 Gb/inch{sup 2} read heads require RxA<1 {omega}{mu}m{sup 2} and TMR>10%, usually achieved by natural oxidation with tAl<0.7 nm barriers. This paper shows that as-deposited junctions with competitive electrical and magnetic properties can be produced starting from 0.9 nm Al barriers and remote plasma oxidation in ion beam-deposited stacks using Co{sub 73.8}Fe{sub 16.2}B{sub 10} electrodes. TMR{approx}20% for RxA{approx}2-15 {omega}{mu}m{sup 2} is obtained, while in the RxA{approx}40-140 {omega}{mu}m{sup 2} range TMR can reach 40%-45%, in as-deposited samples. A limited number of junctions exhibits considerably lower RxA values with respect to the average while keeping similarmore » MR (down to 0.44 {omega}{mu}m{sup 2} with 20% and down to 2.2 {omega}{mu}m{sup 2} with 51%)« less

Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS{sub 2} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutar, Surajit; Agnihotri, Pratik; Comfort, Everett

2014-03-24

Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS{sub 2}. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS{sub 2} flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS{sub 2} flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectralmore » response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4{sub kB}T is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction.« less

Pair-breaking mechanisms in superconductor—normal-metal—superconductor junctions

NASA Astrophysics Data System (ADS)

Yang, H. C.; Finnemore, D. K.

1984-08-01

The critical current density Jc has been measured for superconductor—normal-metal—superconductor (S-N-S) junctions over a wide range of temperature and composition in order to determine the depairing effects of magnetic impurities. Junctions, which are in a sandwich geometry with the N layer typically 600 nm thick, show well-defined diffraction patterns indicating that the junctions are of high quality. Below 4.2 K, the temperature dependence of Jc is found to follow a modified bridge theory based on the work of Makeev et al.

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Rui; University of Chinese Academy of Sciences, Beijing 100049; Makise, Kazumasa

We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large I{sub c}R{sub N} product of 3.8 mV, a sharp quasiparticle current rise with a ΔV{sub g} of 0.4 mV, and a small subgap leakage current. The junction quality factor R{sub sg}/R{sub N} was about 23 for the junction with a J{sub c} of 47 A/cm{supmore » 2} and was about 6 for the junction with a J{sub c} of 3.0 kA/cm{sup 2}. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.« less

Numerical Evaluation of Lateral Diffusion Inside Diffusive Gradients in Thin Films Samplers

PubMed Central

2015-01-01

Using numerical simulation of diffusion inside diffusive gradients in thin films (DGT) samplers, we show that the effect of lateral diffusion inside the sampler on the solute flux into the sampler is a nonlinear function of the diffusion layer thickness and the physical sampling window size. In contrast, earlier work concluded that this effect was constant irrespective of parameters of the sampler geometry. The flux increase caused by lateral diffusion inside the sampler was determined to be ∼8.8% for standard samplers, which is considerably lower than the previous estimate of ∼20%. Lateral diffusion is also propagated to the diffusive boundary layer (DBL), where it leads to a slightly stronger decrease in the mass uptake than suggested by the common 1D diffusion model that is applied for evaluating DGT results. We introduce a simple correction procedure for lateral diffusion and demonstrate how the effect of lateral diffusion on diffusion in the DBL can be accounted for. These corrections often result in better estimates of the DBL thickness (δ) and the DGT-measured concentration than earlier approaches and will contribute to more accurate concentration measurements in solute monitoring in waters. PMID:25877251

Methane Hydrate Formation in Thick Sand Reservoirs: Long-range Gas Transport or Short-range Methane Diffusion?

NASA Astrophysics Data System (ADS)

You, K.; Flemings, P. B.

2016-12-01

We developed two 2-D numerical models to simulate hydrate formation by long range methane gas transport and short-range methane diffusion. We interpret that methane hydrates in thick sands are most likely formed by long range gas transport where methane gas is transported upward into the hydrate stability zone (HSZ) under buoyancy and locally forms hydrate to its stability limit. In short-range methane diffusion, methane is generated locally by biodegradation of organic matter in mud and diffused into bounding sands where it forms hydrate. We could not simulate enough methane transport by diffusion to account for its observed concentration in thick sands. In our models, we include the capillary effect on dissolved methane solubility and on the hydrate phase boundary, sedimentation and different compaction in sand and mud, fracture generation as well as the fully coupled multiphase flow and multicomponent transport. We apply our models to a 12 meter-thick hydrate-bearing sand layer at Walker Ridge 313, Northern Gulf of Mexico. With the long-range gas transport, hydrate saturation is greater than 90% and salinity is increased from seawater to about 8 wt.% through the entire sand. With short-range diffusion, hydrate saturation is more than 90% at the sand base and is less than 10% in the overlying section; salinity is close to seawater when sand is deposited to 800 meter below seafloor by short-range methane diffusion. With short-range diffusion, the amount of hydrate formed is much less than that interpreted from the well log data. Two transient gas layers separated by a hydrate layer are formed from short-range diffusion caused by capillary effect. This could be interpreted as a double bottom simulating reflector. This study provides further insights into different hydrate formation mechanisms, and could serve as a base to confirm the hydrate formation mechanism in fields.

Thick tissue diffusion model with binding to optimize topical staining in fluorescence breast cancer margin imaging

NASA Astrophysics Data System (ADS)

Xu, Xiaochun; Kang, Soyoung; Navarro-Comes, Eric; Wang, Yu; Liu, Jonathan T. C.; Tichauer, Kenneth M.

2018-03-01

Intraoperative tumor/surgical margin assessment is required to achieve higher tumor resection rate in breast-conserving surgery. Though current histology provides incomparable accuracy in margin assessment, thin tissue sectioning and the limited field of view of microscopy makes histology too time-consuming for intraoperative applications. If thick tissue, wide-field imaging can provide an acceptable assessment of tumor cells at the surface of resected tissues, an intraoperative protocol can be developed to guide the surgery and provide immediate feedback for surgeons. Topical staining of margins with cancer-targeted molecular imaging agents has the potential to provide the sensitivity needed to see microscopic cancer on a wide-field image; however, diffusion and nonspecific retention of imaging agents in thick tissue can significantly diminish tumor contrast with conventional methods. Here, we present a mathematical model to accurately simulate nonspecific retention, binding, and diffusion of imaging agents in thick tissue topical staining to guide and optimize future thick tissue staining and imaging protocol. In order to verify the accuracy and applicability of the model, diffusion profiles of cancer targeted and untargeted (control) nanoparticles at different staining times in A431 tumor xenografts were acquired for model comparison and tuning. The initial findings suggest the existence of nonspecific retention in the tissue, especially at the tissue surface. The simulator can be used to compare the effect of nonspecific retention, receptor binding and diffusion under various conditions (tissue type, imaging agent) and provides optimal staining and imaging protocols for targeted and control imaging agent.

Using hybrid implicit Monte Carlo diffusion to simulate gray radiation hydrodynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cleveland, Mathew A., E-mail: cleveland7@llnl.gov; Gentile, Nick

This work describes how to couple a hybrid Implicit Monte Carlo Diffusion (HIMCD) method with a Lagrangian hydrodynamics code to evaluate the coupled radiation hydrodynamics equations. This HIMCD method dynamically applies Implicit Monte Carlo Diffusion (IMD) [1] to regions of a problem that are opaque and diffusive while applying standard Implicit Monte Carlo (IMC) [2] to regions where the diffusion approximation is invalid. We show that this method significantly improves the computational efficiency as compared to a standard IMC/Hydrodynamics solver, when optically thick diffusive material is present, while maintaining accuracy. Two test cases are used to demonstrate the accuracy andmore » performance of HIMCD as compared to IMC and IMD. The first is the Lowrie semi-analytic diffusive shock [3]. The second is a simple test case where the source radiation streams through optically thin material and heats a thick diffusive region of material causing it to rapidly expand. We found that HIMCD proves to be accurate, robust, and computationally efficient for these test problems.« less

Ultrafast demagnetization by hot electrons: Diffusion or super-diffusion?

PubMed

Salvatella, G; Gort, R; Bühlmann, K; Däster, S; Vaterlaus, A; Acremann, Y

2016-09-01

Ultrafast demagnetization of ferromagnetic metals can be achieved by a heat pulse propagating in the electron gas of a non-magnetic metal layer, which absorbs a pump laser pulse. Demagnetization by electronic heating is investigated on samples with different thicknesses of the absorber layer on nickel. This allows us to separate the contribution of thermalized hot electrons compared to non-thermal electrons. An analytical model describes the demagnetization amplitude as a function of the absorber thickness. The observed change of demagnetization time can be reproduced by diffusive heat transport through the absorber layer.

Axial p-n-junctions in nanowires.

PubMed

Fernandes, C; Shik, A; Byrne, K; Lynall, D; Blumin, M; Saveliev, I; Ruda, H E

2015-02-27

The charge distribution and potential profile of p-n-junctions in thin semiconductor nanowires (NWs) were analyzed. The characteristics of screening in one-dimensional systems result in a specific profile with large electric field at the boundary between the n- and p- regions, and long tails with a logarithmic drop in the potential and charge density. As a result of these tails, the junction properties depend sensitively on the geometry of external contacts and its capacity has an anomalously large value and frequency dispersion. In the presence of an external voltage, electrons and holes in the NWs can not be described by constant quasi-Fermi levels, due to small values of the average electric field, mobility, and lifetime of carriers. Thus, instead of the classical Sah-Noice-Shockley theory, the junction current-voltage characteristic was described by an alternative theory suitable for fast generation-recombination and slow diffusion-drift processes. For the non-uniform electric field in the junction, this theory predicts the forward branch of the characteristic to have a non-ideality factor η several times larger than the values 1 < η < 2 from classical theory. Such values of η have been experimentally observed by a number of researchers, as well as in the present work.

Superstructures and multijunction cells for high efficiency energy conversion

NASA Technical Reports Server (NTRS)

Wagner, M.; Leburton, J. P.

1985-01-01

Potential applications of superlattices to photovoltaic structures are discussed. A single-bandgap, multijunction cell with selective electrodes for lateral transport of collected carriers is proposed. The concept is based on similar doping superlattice (NIPI) structures. Computer simulations show that by reducing bulk recombination losses, the spectral response of such cells is enhanced, particularly for poor quality materials with short diffusion lengths. Dark current contributions of additional junctions result in a trade-off between short-circuit current and open-circuit voltage as the number of layers is increased. One or two extra junctions appear to be optimal.

Influence of a fat layer on the near infrared spectra of human muscle: quantitative analysis based on two-layered Monte Carlo simulations and phantom experiments

NASA Technical Reports Server (NTRS)

Yang, Ye; Soyemi, Olusola O.; Landry, Michelle R.; Soller, Babs R.

2005-01-01

The influence of fat thickness on the diffuse reflectance spectra of muscle in the near infrared (NIR) region is studied by Monte Carlo simulations of a two-layer structure and with phantom experiments. A polynomial relationship was established between the fat thickness and the detected diffuse reflectance. The influence of a range of optical coefficients (absorption and reduced scattering) for fat and muscle over the known range of human physiological values was also investigated. Subject-to-subject variation in the fat optical coefficients and thickness can be ignored if the fat thickness is less than 5 mm. A method was proposed to correct the fat thickness influence. c2005 Optical Society of America.

Controllable 0–π Josephson junctions containing a ferromagnetic spin valve

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gingrich, E. C.; Niedzielski, Bethany M.; Glick, Joseph A.

Superconductivity and ferromagnetism are antagonistic forms of order, and rarely coexist. Many interesting new phenomena occur, however, in hybrid superconducting/ferromagnetic systems. For example, a Josephson junction containing a ferromagnetic material can exhibit an intrinsic phase shift of π in its ground state for certain thicknesses of the material. Such ‘π-junctions’ were first realized experimentally in 2001, and have been proposed as circuit elements for both high-speed classical superconducting computing and for quantum computing. Here we demonstrate experimentally that the phase state of a Josephson junction containing two ferromagnetic layers can be toggled between 0 and pi by changing the relativemore » orientation of the two magnetizations. These controllable 0–π junctions have immediate applications in cryogenic memory, where they serve as a necessary component to an ultralow power superconducting computer. Such a fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. Here, phase-controllable junctions also open up new possibilities for superconducting circuit elements such as superconducting ‘programmable logic’, where they could function in superconducting analogues to field-programmable gate arrays.« less

Controllable 0–π Josephson junctions containing a ferromagnetic spin valve

DOE PAGES

Gingrich, E. C.; Niedzielski, Bethany M.; Glick, Joseph A.; ...

2016-03-14

Superconductivity and ferromagnetism are antagonistic forms of order, and rarely coexist. Many interesting new phenomena occur, however, in hybrid superconducting/ferromagnetic systems. For example, a Josephson junction containing a ferromagnetic material can exhibit an intrinsic phase shift of π in its ground state for certain thicknesses of the material. Such ‘π-junctions’ were first realized experimentally in 2001, and have been proposed as circuit elements for both high-speed classical superconducting computing and for quantum computing. Here we demonstrate experimentally that the phase state of a Josephson junction containing two ferromagnetic layers can be toggled between 0 and pi by changing the relativemore » orientation of the two magnetizations. These controllable 0–π junctions have immediate applications in cryogenic memory, where they serve as a necessary component to an ultralow power superconducting computer. Such a fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. Here, phase-controllable junctions also open up new possibilities for superconducting circuit elements such as superconducting ‘programmable logic’, where they could function in superconducting analogues to field-programmable gate arrays.« less

Inverse models of gravity data from the Red Sea-Aden-East African rifts triple junction zone

NASA Astrophysics Data System (ADS)

Tiberi, Christel; Ebinger, Cynthia; Ballu, Valérie; Stuart, Graham; Oluma, Befekadu

2005-11-01

The combined effects of stretching and magmatism permanently modify crustal structure in continental rifts and volcanic passive margins. The Red Sea-Gulf of Aden-Ethiopian rift triple junction zone provides a unique opportunity to examine incipient volcanic margin formation above or near an asthenospheric upwelling. We use gravity inversions and forward modelling to examine lateral variations in crust and upper mantle structure across the Oligocene flood basalt province, which has subsequently been extended to form the Red Sea, Gulf of Aden and Main Ethiopian rifts. We constrain and test the obtained models with new and existing seismic estimates of crustal thickness. In particular, we predict crustal thickness across the uplifted plateaux and rift valleys, and calibrate our results with recent receiver function analyses. We discuss the results together with a 3-D distribution of density contrasts in terms of magmatic margin structure. The main conclusions are: (1) a denser (+240 kg m-3) and/or a thinner crust (23 km) in the triple junction zone of the Afar depression; (2) a shallower Moho is found along the Main Ethiopian rift axis, with crustal thickness values decreasing from 32-33 km in the south to 24 km beneath the southern Afar depression; (3) thicker crust (~40 km) is present beneath the broad uplifted Oligocene flood basalt province, suggesting that crustal underplating compensates most of the plateau uplift and (4) possible magmatic underplating or a segmentation in the rift structure is observed at ~8°N, 39°W beneath several collapsed caldera complexes. These results indicate that magmatism has profoundly changed crustal structure throughout the flood basalt province.

Improving image segmentation performance and quantitative analysis via a computer-aided grading methodology for optical coherence tomography retinal image analysis.

PubMed

Debuc, Delia Cabrera; Salinas, Harry M; Ranganathan, Sudarshan; Tátrai, Erika; Gao, Wei; Shen, Meixiao; Wang, Jianhua; Somfai, Gábor M; Puliafito, Carmen A

2010-01-01

We demonstrate quantitative analysis and error correction of optical coherence tomography (OCT) retinal images by using a custom-built, computer-aided grading methodology. A total of 60 Stratus OCT (Carl Zeiss Meditec, Dublin, California) B-scans collected from ten normal healthy eyes are analyzed by two independent graders. The average retinal thickness per macular region is compared with the automated Stratus OCT results. Intergrader and intragrader reproducibility is calculated by Bland-Altman plots of the mean difference between both gradings and by Pearson correlation coefficients. In addition, the correlation between Stratus OCT and our methodology-derived thickness is also presented. The mean thickness difference between Stratus OCT and our methodology is 6.53 microm and 26.71 microm when using the inner segment/outer segment (IS/OS) junction and outer segment/retinal pigment epithelium (OS/RPE) junction as the outer retinal border, respectively. Overall, the median of the thickness differences as a percentage of the mean thickness is less than 1% and 2% for the intragrader and intergrader reproducibility test, respectively. The measurement accuracy range of the OCT retinal image analysis (OCTRIMA) algorithm is between 0.27 and 1.47 microm and 0.6 and 1.76 microm for the intragrader and intergrader reproducibility tests, respectively. Pearson correlation coefficients demonstrate R(2)>0.98 for all Early Treatment Diabetic Retinopathy Study (ETDRS) regions. Our methodology facilitates a more robust and localized quantification of the retinal structure in normal healthy controls and patients with clinically significant intraretinal features.

Improving image segmentation performance and quantitative analysis via a computer-aided grading methodology for optical coherence tomography retinal image analysis

NASA Astrophysics Data System (ADS)

Cabrera Debuc, Delia; Salinas, Harry M.; Ranganathan, Sudarshan; Tátrai, Erika; Gao, Wei; Shen, Meixiao; Wang, Jianhua; Somfai, Gábor M.; Puliafito, Carmen A.

2010-07-01

We demonstrate quantitative analysis and error correction of optical coherence tomography (OCT) retinal images by using a custom-built, computer-aided grading methodology. A total of 60 Stratus OCT (Carl Zeiss Meditec, Dublin, California) B-scans collected from ten normal healthy eyes are analyzed by two independent graders. The average retinal thickness per macular region is compared with the automated Stratus OCT results. Intergrader and intragrader reproducibility is calculated by Bland-Altman plots of the mean difference between both gradings and by Pearson correlation coefficients. In addition, the correlation between Stratus OCT and our methodology-derived thickness is also presented. The mean thickness difference between Stratus OCT and our methodology is 6.53 μm and 26.71 μm when using the inner segment/outer segment (IS/OS) junction and outer segment/retinal pigment epithelium (OS/RPE) junction as the outer retinal border, respectively. Overall, the median of the thickness differences as a percentage of the mean thickness is less than 1% and 2% for the intragrader and intergrader reproducibility test, respectively. The measurement accuracy range of the OCT retinal image analysis (OCTRIMA) algorithm is between 0.27 and 1.47 μm and 0.6 and 1.76 μm for the intragrader and intergrader reproducibility tests, respectively. Pearson correlation coefficients demonstrate R2>0.98 for all Early Treatment Diabetic Retinopathy Study (ETDRS) regions. Our methodology facilitates a more robust and localized quantification of the retinal structure in normal healthy controls and patients with clinically significant intraretinal features.

Age-related change in renal corticomedullary differentiation: evaluation with noncontrast-enhanced steady-state free precession (SSFP) MRI with spatially selective inversion pulse using variable inversion time.

PubMed

Noda, Yasufumi; Kanki, Akihiko; Yamamoto, Akira; Higashi, Hiroki; Tanimoto, Daigo; Sato, Tomohiro; Higaki, Atsushi; Tamada, Tsutomu; Ito, Katsuyoshi

2014-07-01

To evaluate age-related change in renal corticomedullary differentiation and renal cortical thickness by means of noncontrast-enhanced steady-state free precession (SSFP) magnetic resonance imaging (MRI) with spatially selective inversion recovery (IR) pulse. The Institutional Review Board of our hospital approved this retrospective study and patient informed consent was waived. This study included 48 patients without renal diseases who underwent noncontrast-enhanced SSFP MRI with spatially selective IR pulse using variable inversion times (TIs) (700-1500 msec). The signal intensity of renal cortex and medulla were measured to calculate renal corticomedullary contrast ratio. Additionally, renal cortical thickness was measured. The renal corticomedullary junction was clearly depicted in all patients. The mean cortical thickness was 3.9 ± 0.83 mm. The mean corticomedullary contrast ratio was 4.7 ± 1.4. There was a negative correlation between optimal TI for the best visualization of renal corticomedullary differentiation and age (r = -0.378; P = 0.001). However, there was no significant correlation between renal corticomedullary contrast ratio and age (r = 0.187; P = 0.20). Similarly, no significant correlation was observed between renal cortical thickness and age (r = 0.054; P = 0.712). In the normal kidney, noncontrast-enhanced SSFP MRI with spatially selective IR pulse can be used to assess renal corticomedullary differentiation and cortical thickness without the influence of aging, although optimal TI values for the best visualization of renal corticomedullary junction were shortened with aging. © 2013 Wiley Periodicals, Inc.

Vibrational Heat Transport in Molecular Junctions

NASA Astrophysics Data System (ADS)

Segal, Dvira; Agarwalla, Bijay Kumar

2016-05-01

We review studies of vibrational energy transfer in a molecular junction geometry, consisting of a molecule bridging two heat reservoirs, solids or large chemical compounds. This setup is of interest for applications in molecular electronics, thermoelectrics, and nanophononics, and for addressing basic questions in the theory of classical and quantum transport. Calculations show that system size, disorder, structure, dimensionality, internal anharmonicities, contact interaction, and quantum coherent effects are factors that combine to determine the predominant mechanism (ballistic/diffusive), effectiveness (poor/good), and functionality (linear/nonlinear) of thermal conduction at the nanoscale. We review recent experiments and relevant calculations of quantum heat transfer in molecular junctions. We recount the Landauer approach, appropriate for the study of elastic (harmonic) phononic transport, and outline techniques that incorporate molecular anharmonicities. Theoretical methods are described along with examples illustrating the challenge of reaching control over vibrational heat conduction in molecules.

Magnetic tunnel junction thermocouple for thermoelectric power harvesting

NASA Astrophysics Data System (ADS)

Böhnert, T.; Paz, E.; Ferreira, R.; Freitas, P. P.

2018-05-01

The thermoelectric power generated in magnetic tunnel junctions (MTJs) is determined as a function of the tunnel barrier thickness for a matched electric circuit. This study suggests that lower resistance area product and higher tunnel magnetoresistance will maximize the thermoelectric power output of the MTJ structures. Further, the thermoelectric behavior of a series of two MTJs, a MTJ thermocouple, is investigated as a function of its magnetic configurations. In an alternating magnetic configurations the thermovoltages cancel each other, while the magnetic contribution remains. A large array of MTJ thermocouples could amplify the magnetic thermovoltage signal significantly.

Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinjo, Hidekazu, E-mail: kinjou.h-lk@nhk.or.jp; Machida, Kenji; Aoshima, Ken-ichi

2014-05-28

Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

Subsurface geometry of the San Andreas-Calaveras fault junction: influence of serpentinite and the Coast Range Ophiolite

USGS Publications Warehouse

Watt, Janet Tilden; Ponce, David A.; Graymer, Russell W.; Jachens, Robert C.; Simpson, Robert W.

2014-01-01

While an enormous amount of research has been focused on trying to understand the geologic history and neotectonics of the San Andreas-Calaveras fault (SAF-CF) junction, fundamental questions concerning fault geometry and mechanisms for slip transfer through the junction remain. We use potential-field, geologic, geodetic, and seismicity data to investigate the 3-D geologic framework of the SAF-CF junction and identify potential slip-transferring structures within the junction. Geophysical evidence suggests that the San Andreas and Calaveras fault zones dip away from each other within the northern portion of the junction, bounding a triangular-shaped wedge of crust in cross section. This wedge changes shape to the south as fault geometries change and fault activity shifts between fault strands, particularly along the Calaveras fault zone (CFZ). Potential-field modeling and relocated seismicity suggest that the Paicines and San Benito strands of the CFZ dip 65° to 70° NE and form the southwest boundary of a folded 1 to 3 km thick tabular body of Coast Range Ophiolite (CRO) within the Vallecitos syncline. We identify and characterize two steeply dipping, seismically active cross structures within the junction that are associated with serpentinite in the subsurface. The architecture of the SAF-CF junction presented in this study may help explain fault-normal motions currently observed in geodetic data and help constrain the seismic hazard. The abundance of serpentinite and related CRO in the subsurface is a significant discovery that not only helps constrain the geometry of structures but may also help explain fault behavior and the tectonic evolution of the SAF-CF junction.

X-ray and Electrochemical Impedance Spectroscopy Diagnostic Investigations of Liquid Water in Polymer Electrolyte Membrane Fuel Cell Gas Diffusion Layers

NASA Astrophysics Data System (ADS)

Antonacci, Patrick

In this thesis, electrochemical impedance spectroscopy (EIS) and synchrotron x-ray radiography were utilized to characterize the impact of liquid water distributions in polymer electrolyte membrane fuel cell (PEMFC) gas diffusion layers (GDLs) on fuel cell performance. These diagnostic techniques were used to quantify the effects of liquid water visualized on equivalent resistances measured through EIS. The effects of varying the thickness of the microporous layer (MPL) of GDLs were studied using these diagnostic techniques. In a first study on the feasibility of this methodology, two fuel cell cases with a 100 microm-thick and a 150 microm-thick MPL were compared under constant current density operation. In a second study with 10, 30, 50, and 100 microm-thick MPLs, the liquid water in the cathode substrate was demonstrated to affect mass transport resistance, while the liquid water content in the anode (from back diffusion) affected membrane hydration, evidenced through ohmic resistance measurements.

Visible light electroluminescent diodes of indium-gallium phosphide

NASA Technical Reports Server (NTRS)

Clough, R.; Richman, D.; Tietjen, J.

1970-01-01

Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

Recoil implantation of boron into silicon by high energy silicon ions

NASA Astrophysics Data System (ADS)

Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan

2001-07-01

A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.

Si/Ge Junctions Formed by Nanomembrane Bonding

DTIC Science & Technology

2011-01-01

hydrophobic bonding of a 200 nm thick 14. ABSTRACT monocrystalline Si(001) membrane to a bulk Ge(001) wafer. The membrane bond has an extremely high...temperature hydrophobic bonding of a 200 nm thick monocrystalline Si(001) membrane to a bulk Ge(001) wafer. The membrane bond has an extremely high quality...them. A RTIC LE KIEFER ET AL. VOL. 5 ’ NO. 2 ’ 1179–1189 ’ 2011 1182 www.acsnano.org monocrystalline . The interfacial region appears to be amorphous

Determination of the Steady State Leakage Current in Structures with Ferroelectric Ceramic Films

NASA Astrophysics Data System (ADS)

Podgornyi, Yu. V.; Vorotilov, K. A.; Sigov, A. S.

2018-03-01

Steady state leakage currents have been investigated in capacitor structures with ferroelectric solgel films of lead zirconate titanate (PZT) formed on silicon substrates with a lower Pt electrode. It is established that Pt/PZT/Hg structures, regardless of the PZT film thickness, are characterized by the presence of a rectifying contact similar to p-n junction. The steady state leakage current in the forward direction increases with a decrease in the film thickness and is determined by the ferroelectric bulk conductivity.

High efficiency thin-film crystalline Si/Ge tandem solar cell.

PubMed

Sun, G; Chang, F; Soref, R A

2010-02-15

We propose and simulate a photovoltaic solar cell comprised of Si and Ge pn junctions in tandem. With an anti-reflection film at the front surface, we have shown that optimal solar cells favor a thin Si layer and a thick Ge layer with a thin tunnel hetero-diode placed in between. We predict efficiency ranging from 19% to 28% for AM1.5G solar irradiance concentrated from 1 approximately 1000 Suns for a cell with a total thickness approximately 100 microm.

Development of an all-metal thick film cost affective metallization system for solar cells

NASA Technical Reports Server (NTRS)

Ross, B.

1981-01-01

An economical thick film solar cell contact for high volume production of low cost silicon solar array modules was investigated. All metal screenable pastes using base metals were studied. Solar cells with junction depths varying by a factor of 3.3, with and without a deposited oxide coating were used. Cells were screened and fired by a two step firing process. Adhesion and metallurgical results are unsatisfactory. No electrical information is obtained due to inadequate contact adhesion.

Body mass scaling of passive oxygen diffusion in endotherms and ectotherms

PubMed Central

Gillooly, James F.; Gomez, Juan Pablo; Mavrodiev, Evgeny V.; Rong, Yue; McLamore, Eric S.

2016-01-01

The area and thickness of respiratory surfaces, and the constraints they impose on passive oxygen diffusion, have been linked to differences in oxygen consumption rates and/or aerobic activity levels in vertebrates. However, it remains unclear how respiratory surfaces and associated diffusion rates vary with body mass across vertebrates, particularly in relation to the body mass scaling of oxygen consumption rates. Here we address these issues by first quantifying the body mass dependence of respiratory surface area and respiratory barrier thickness for a diversity of endotherms (birds and mammals) and ectotherms (fishes, amphibians, and reptiles). Based on these findings, we then use Fick’s law to predict the body mass scaling of oxygen diffusion for each group. Finally, we compare the predicted body mass dependence of oxygen diffusion to that of oxygen consumption in endotherms and ectotherms. We find that the slopes and intercepts of the relationships describing the body mass dependence of passive oxygen diffusion in these two groups are statistically indistinguishable from those describing the body mass dependence of oxygen consumption. Thus, the area and thickness of respiratory surfaces combine to match oxygen diffusion capacity to oxygen consumption rates in both air- and water-breathing vertebrates. In particular, the substantially lower oxygen consumption rates of ectotherms of a given body mass relative to those of endotherms correspond to differences in oxygen diffusion capacity. These results provide insights into the long-standing effort to understand the structural attributes of organisms that underlie the body mass scaling of oxygen consumption. PMID:27118837

Body mass scaling of passive oxygen diffusion in endotherms and ectotherms.

PubMed

Gillooly, James F; Gomez, Juan Pablo; Mavrodiev, Evgeny V; Rong, Yue; McLamore, Eric S

2016-05-10

The area and thickness of respiratory surfaces, and the constraints they impose on passive oxygen diffusion, have been linked to differences in oxygen consumption rates and/or aerobic activity levels in vertebrates. However, it remains unclear how respiratory surfaces and associated diffusion rates vary with body mass across vertebrates, particularly in relation to the body mass scaling of oxygen consumption rates. Here we address these issues by first quantifying the body mass dependence of respiratory surface area and respiratory barrier thickness for a diversity of endotherms (birds and mammals) and ectotherms (fishes, amphibians, and reptiles). Based on these findings, we then use Fick's law to predict the body mass scaling of oxygen diffusion for each group. Finally, we compare the predicted body mass dependence of oxygen diffusion to that of oxygen consumption in endotherms and ectotherms. We find that the slopes and intercepts of the relationships describing the body mass dependence of passive oxygen diffusion in these two groups are statistically indistinguishable from those describing the body mass dependence of oxygen consumption. Thus, the area and thickness of respiratory surfaces combine to match oxygen diffusion capacity to oxygen consumption rates in both air- and water-breathing vertebrates. In particular, the substantially lower oxygen consumption rates of ectotherms of a given body mass relative to those of endotherms correspond to differences in oxygen diffusion capacity. These results provide insights into the long-standing effort to understand the structural attributes of organisms that underlie the body mass scaling of oxygen consumption.

NIS tunnel junction as an x-ray photon sensor

NASA Astrophysics Data System (ADS)

Azgui, Fatma; Mears, Carl A.; Labov, Simon E.; Frank, Matthias A.; Sadoulet, Bernard; Brunet, E.; Hiller, Lawrence J.; Lindeman, Mark A.; Netel, Harrie

1995-09-01

This work presents the first results of our development of normal-insulating-superconducting tunnel junctions used as energy dispersive detectors for low energy particles. The device described here is a Ag/Al(subscript 2)O(subscript 3)/Al tunnel junction of area 1.5 multiplied by 10(superscript 4) micrometer squared with thicknesses of 200 nm for the normal Ag strip and 100 nm for the superconducting Al film. Two different high-speed SQUID systems manufactured by quantum magnetics and HYPRES, respectively, were used for the readout of this device. At 80 mK bath temperature we obtained an energy resolution DeltaE(subscript FWHM) equals 250 eV for 5.89 keV x rays absorbed directly in the normal metal. This energy resolution appears to be limited in large part by the observed strong position dependence of the device response.

Monitoring gap junctional communication in astrocytes from acute adult mouse brain slices using the gap-FRAP technique.

PubMed

Yi, Chenju; Teillon, Jérémy; Koulakoff, Annette; Berry, Hugues; Giaume, Christian

2018-06-01

Intercellular communication through gap junction channels plays a key role in cellular homeostasis and in synchronizing physiological functions, a feature that is modified in number of pathological situations. In the brain, astrocytes are the cell population that expresses the highest amount of gap junction proteins, named connexins. Several techniques have been used to assess the level of gap junctional communication in astrocytes, but so far they remain very difficult to apply in adult brain tissue. Here, using specific loading of astrocytes with sulforhodamine 101, we adapted the gap-FRAP (Fluorescence Recovery After Photobleaching) to acute hippocampal slices from 9 month-old adult mice. We show that gap junctional communication monitored in astrocytes with this technique was inhibited either by pharmacological treatment with a gap junctional blocker or in mice lacking the two main astroglial connexins, while a partial inhibition was measured when only one connexin was knocked-out. We validate this approach using a mathematical model of sulforhodamine 101 diffusion in an elementary astroglial network and a quantitative analysis of the exponential fits to the fluorescence recovery curves. Consequently, we consider that the adaptation of the gap-FRAP technique to acute brain slices from adult mice provides an easy going and valuable approach that allows overpassing this age-dependent obstacle and will facilitate the investigation of gap junctional communication in adult healthy or pathological brain. Copyright © 2018 Elsevier B.V. All rights reserved.

Low-energy BF2, BCl2, and BBr2 implants for ultrashallow P+-N junctions

NASA Astrophysics Data System (ADS)

Nandan, S. R.; Agarwal, Vikas; Banerjee, Sanjay K.

1997-08-01

We have examined low energy BCl2 and BBr2 implants as a means of fabricating ultra-shallow P+-N junctions. Five keV and 9 keV BCl2 implants and 18 keV BBr2 implants have been compared to 5 keV BF2 implants to study the benefits of using these species. BCl2 and BBr2, being heavier species, have a lower projected range and produce more damage. The greater damage restricts channeling, resulting in shallower as-implanted profiles. The increased damage amorphizes the substrate at low implant doses which results in reduced transient enhanced diffusion (TED) during the post-implant anneal. Post-anneal SIMS profiles indicate a junction depth reduction of over 10 nm (at 5 X 1017 cm-3 background doping) for 5 keV BCl2 implants as compared to 5 keV BF2 implants. Annealed junctions as shallow as 10 nm have been obtained from the 18 keV BBr2 implants. The increased damage degrades the electrical properties of these junctions by enhancing the leakage current densities. BCl2 implanted junctions have leakage current densities of approximately 1 (mu) A/cm2 as compared to 10 nA/cm2 for the BF2 implants. BBr2 implants have a lower leakage density of approximately 50 nA/cm2. Low energy BBr2 implants offer an exciting alternative for fabricating low leakage, ultra-shallow P+-N junctions.

Polarization curling and flux closures in multiferroic tunnel junctions

NASA Astrophysics Data System (ADS)

Peters, Jonathan J. P.; Apachitei, Geanina; Beanland, Richard; Alexe, Marin; Sanchez, Ana M.

2016-11-01

Formation of domain walls in ferroelectrics is not energetically favourable in low-dimensional systems. Instead, vortex-type structures are formed that are driven by depolarization fields occurring in such systems. Consequently, polarization vortices have only been experimentally found in systems in which these fields are deliberately maximized, that is, in films between insulating layers. As such configurations are devoid of screening charges provided by metal electrodes, commonly used in electronic devices, it is wise to investigate if curling polarization structures are innate to ferroelectricity or induced by the absence of electrodes. Here we show that in unpoled Co/PbTiO3/(La,Sr)MnO3 ferroelectric tunnel junctions, the polarization in active PbTiO3 layers 9 unit cells thick forms Kittel-like domains, while at 6 unit cells there is a complex flux-closure curling behaviour resembling an incommensurate phase. Reducing the thickness to 3 unit cells, there is an almost complete loss of switchable polarization associated with an internal gradient.

Extracting the Density of States of Copper Phthalocyanine at the SiO2 Interface with Electronic Sum Frequency Generation.

PubMed

Pandey, Ravindra; Moon, Aaron P; Bender, Jon A; Roberts, Sean T

2016-03-17

Organic semiconductors (OSCs) constitute an attractive platform for optoelectronics design due to the ease of their processability and chemically tunable properties. Incorporating OSCs into electrical circuits requires forming junctions between them and other materials, yet the change in dielectric properties about these junctions can strongly perturb the electronic structure of the OSC. Here we adapt an interface-selective optical technique, electronic sum frequency generation (ESFG), to the study of a model OSC thin-film system, copper phthalocyanine (CuPc) deposited on SiO2. We find that by modeling the thickness dependence of our measured spectra, we can identify changes in CuPc's electronic density of states at both its buried interface with SiO2 and air-exposed surface. Our work demonstrates that ESFG can be used to noninvasively probe the interfacial electronic structure of optically thick OSC films, indicating that it can be used for the study of OSC-based optoelectronics in situ.

Polarization curling and flux closures in multiferroic tunnel junctions

PubMed Central

Peters, Jonathan J. P.; Apachitei, Geanina; Beanland, Richard; Alexe, Marin; Sanchez, Ana M.

2016-01-01

Formation of domain walls in ferroelectrics is not energetically favourable in low-dimensional systems. Instead, vortex-type structures are formed that are driven by depolarization fields occurring in such systems. Consequently, polarization vortices have only been experimentally found in systems in which these fields are deliberately maximized, that is, in films between insulating layers. As such configurations are devoid of screening charges provided by metal electrodes, commonly used in electronic devices, it is wise to investigate if curling polarization structures are innate to ferroelectricity or induced by the absence of electrodes. Here we show that in unpoled Co/PbTiO3/(La,Sr)MnO3 ferroelectric tunnel junctions, the polarization in active PbTiO3 layers 9 unit cells thick forms Kittel-like domains, while at 6 unit cells there is a complex flux-closure curling behaviour resembling an incommensurate phase. Reducing the thickness to 3 unit cells, there is an almost complete loss of switchable polarization associated with an internal gradient. PMID:27848970

Metalliclike behavior of the exchange coupling in (001) Fe/MgO/Fe junctions

NASA Astrophysics Data System (ADS)

Bellouard, C.; Duluard, A.; Snoeck, E.; Lu, Y.; Negulescu, B.; Lacour, D.; Senet, C.; Robert, S.; Maloufi, N.; Andrieu, S.; Hehn, M.; Tiusan, C.

2017-10-01

Exchange magnetic coupling between Fe electrodes through a thin MgO interlayer in epitaxial junctions has been investigated as a function of temperature, MgO thickness, and interface quality. Depending on the MgO thickness, which has been varied from 1.5 to 4 monolayers, two opposite temperature dependences are clearly disentangled. For a thin MgO spacer, the main component decreases with temperature following a metalliclike behavior. On the contrary, for the thickest MgO layers, the main component increases with temperature, following an Arrhenius law. Moreover, the insertion of a monoatomic roughness at the bottom MgO interface, induced by the addition of a fraction of a Fe monolayer, exacerbates the metallic features as an oscillatory behavior from antiferromagnetic to ferromagnetic is observed. These results allow questioning the simple tunneling mechanism usually invoked for MgO coupling, and suggest a crossover behavior of the thin MgO spacer from metallic to insulating with a progressive opening of the gap.

Feasibility study of tungsten as a diffusion barrier between nickel-chromium-aluminum and Gamma/Gamma prime - Delta eutectic alloys

NASA Technical Reports Server (NTRS)

Young, S. G.; Zellars, G. R.

1978-01-01

Coating systems proposed for potential use on eutectic alloy components in high-temperature gas turbine engines were studied with emphasis on deterioration of such systems by diffusion. A 1-mil thick W sheet was placed between eutectic alloys and a NiCrAl layer. Layered test specimens were aged at 1100 C for as long as long as 500 hours. Without the W barrier, the delta phase of the eutectic deteriorated by diffusion of Nb into the NiCrAl. Insertion of the W barrier stopped the diffusion of Nb from delta. Chromium diffusion from the NiCrAl into the gamma/gamma prime phase of the eutectic was greatly reduced by the barrier. However, the barrier thickness decreased with time; and W diffused into both the NiCrAl and the eutectic. When the delta platelets were alined parallel to the NiCrAl layer, rather than perpendicular, diffusion into the eutectic was reduced.

Investigation of the annealing temperature dependence of the spin pumping in Co20Fe60B20/Pt systems

NASA Astrophysics Data System (ADS)

Belmeguenai, M.; Aitoukaci, K.; Zighem, F.; Gabor, M. S.; Petrisor, T.; Mos, R. B.; Tiusan, C.

2018-03-01

Co20Fe60B20/Pt systems with variable thicknesses of Co20Fe60B20 and of Pt have been sputtered and then annealed at various temperatures (Ta) up to 300 °C. Microstrip line ferromagnetic resonance (MS-FMR) has been used to investigate Co20Fe60B20 and Pt thickness dependencies of the magnetic damping enhancement due to the spin pumping. Using diffusion and ballistic models for spin pumping, the spin mixing conductance and the spin diffusion length have been deduced from the Co20Fe60B20 and the Pt thickness dependencies of the Gilbert damping parameter α of the Co20Fe60B20/Pt heterostructures, respectively. Within the ballistic simple model, both the spin mixing conductance at the CoFeB/Pt interface and the spin-diffusion length of Pt increase with the increasing annealing temperature and show a strong enhancement at 300 °C annealing temperature. In contrast, the spin mixing conductance, which increases with Ta, shows a different trend to the spin diffusion length when using the diffusion model. Moreover, MS-FMR measurements revealed that the effective magnetization varies linearly with the Co20Fe60B20 inverse thickness due to the perpendicular interface anisotropy, which is found to decrease as the annealing temperature increases. It also revealed that the angular dependence of the resonance field is governed by small uniaxial anisotropy which is found to vary linearly with the Co20Fe60B20 inverse thickness of the annealed films, in contrast to that of the as grown ones.

Diffusion capacity and CT measures of emphysema and airway wall thickness - relation to arterial oxygen tension in COPD patients.

PubMed

Saure, Eirunn Waatevik; Bakke, Per Sigvald; Lind Eagan, Tomas Mikal; Aanerud, Marianne; Jensen, Robert Leroy; Grydeland, Thomas Blix; Johannessen, Ane; Nilsen, Roy Miodini; Thorsen, Einar; Hardie, Jon Andrew

2016-01-01

Decreased diffusing capacity of the lung for carbon monoxide (DLCO) is associated with emphysema. DLCO is also related to decreased arterial oxygen tension (PaO2), but there are limited data on associations between PaO2 and computed tomography (CT) derived measures of emphysema and airway wall thickness. To examine whether CT measures of emphysema and airway wall thickness are associated with level of arterial oxygen tension beyond that provided by measurements of diffusion capacity and spirometry. The study sample consisted of 271 smoking or ex-smoking COPD patients from the Bergen COPD Cohort Study examined in 2007-2008. Emphysema was assessed as percent of low-attenuation areas<-950 Hounsfield units (%LAA), and airway wall thickness as standardised measure at an internal perimeter of 10 mm (AWT-Pi10). Multiple linear regression models were fitted with PaO2 as the outcome variable, and %LAA, AWT-Pi10, DLCO and carbon monoxide transfer coefficient (KCO) as main explanatory variables. The models were adjusted for sex, age, smoking status, and haemoglobin concentration, as well as forced expiratory volume in one second (FEV1). Sixty two per cent of the subjects were men, mean (SD) age was 64 (7) years, mean (SD) FEV1 in percent predicted was 50 (15)%, and mean PaO2 (SD) was 9.3 (1.1) kPa. The adjusted regression coefficient (CI) for PaO2 was -0.32 (-0.04-(-0.019)) per 10% increase in %LAA (p<0.01). When diffusion capacity and FEV1 were added to the model, respectively, the association lost its statistical significance. No relationship between airway wall thickness and PaO2 was found. CT assessment of airway wall thickness is not associated with arterial oxygen tension in COPD patients. Emphysema score measured by chest CT, is related to decreased PaO2, but cannot replace measurements of diffusion capacity in the clinical evaluation of hypoxaemia.

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

NASA Technical Reports Server (NTRS)

Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

1994-01-01

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

3-D laser confocal microscopy study of the oxidation of NdFeB magnets in atmospheric conditions

NASA Astrophysics Data System (ADS)

Meakin, J. P.; Speight, J. D.; Sheridan, R. S.; Bradshaw, A.; Harris, I. R.; Williams, A. J.; Walton, A.

2016-08-01

Neodymium iron boron (NdFeB) magnets are used in a number of important applications, such as generators in gearless wind turbines, motors in electric vehicles and electronic goods (e.g.- computer hard disk drives, HDD). Hydrogen can be used as a processing gas to separate and recycle scrap sintered Nd-Fe-B magnets from end-of-life products to form a powder suitable for recycling. However, the magnets are likely to have been exposed to atmospheric conditions prior to processing, and any oxidation could lead to activation problems for the hydrogen decrepitation reaction. Many previous studies on the oxidation of NdFeB magnets have been performed at elevated temperatures; however, few studies have been formed under atmospheric conditions. In this paper a combination of 3-D laser confocal microscopy and Raman spectroscopy have been used to assess the composition, morphology and rate of oxidation/corrosion on scrap sintered NdFeB magnets. Confocal microscopy has been employed to measure the growth of surface reaction products at room temperature, immediately after exposure to air. The results showed that there was a significant height increase at the triple junctions of the Nd-rich grain boundaries. Using Raman spectroscopy, the product was shown to consist of Nd2O3 and formed only on the Nd-rich triple junctions. The diffusion coefficient of the triple junction reaction product growth at 20 °C was determined to be approximately 4 × 10-13 cm2/sec. This value is several orders of magnitude larger than values derived from the diffusion controlled oxide growth observations at elevated temperatures in the literature. This indicates that the growth of the room temperature oxidation products are likely defect enhanced processes at the NdFeB triple junctions.

Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

1994-01-01

The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

Method for fabricating silicon cells

DOEpatents

Ruby, Douglas S.; Basore, Paul A.; Schubert, W. Kent

1998-08-11

A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

Exploring Hot Gas at Junctions of Galaxy Filaments

NASA Astrophysics Data System (ADS)

Mitsuishi, Ikuyuki; Yamasaki, Noriko; Kawahara, Hajime; Sekiya, Norio; Sasaki, Shin; Sousbie, Thierry

Because galaxies are forced to follow the strong gravitational potential created by the underlying cosmic web of the dark matter, their distribution reflects its filamentary structures. By identifying the filamentary structures, one can therefore recover a map of the network that drives structure formation. Filamentary junctions are regions of particular interest as they identify places where mergers and other interesting astrophysical phenomena have high chances to occur. We identified the galaxy filaments by our original method (Sousbie (2011) & Sousbie et al. (2011)) and X-ray pointing observations were conducted for the six fields locating in the junctions of the galaxy filaments where no specific diffuse X-ray emissions had previously been detected so far. We discovered significant X-ray signals in their images and spectra of the all regions. Spectral analysis demonstrated that six sources originate from diffuse emissions associated with optically bright galaxies, group-scale, or cluster-scale X-ray halos with kT˜1-4 keV, while the others are compact object origin. Interestingly, all of the newly discovered three intracluster media show peculiar features such as complex or elongated morphologies in X-ray and/or optical and hot spot involved in ongoing merger events (Kawahara et al. (2011) & Mitsuishi et al. (2014)). In this conference, results of follow-up radio observations for the merging groups as well as the details of the X-ray observations will be reported.

Simulation of thermally induced processes of diffusion and phase formation in layered binary metallic systems

NASA Astrophysics Data System (ADS)

Rusakov, V. S.; Sukhorukov, I. A.; Zhankadamova, A. M.; Kadyrzhanov, K. K.

2010-05-01

Results of the simulation of thermally induced processes of diffusion and phase formation in model and experimentally investigated layered binary metallic systems are presented. The physical model is based on the Darken phenomenological theory and on the mechanism of interdiffusion of components along the continuous diffusion channels of phases in the two-phase regions of the system. The simulation of processes in the model systems showed that the thermally stabilized concentration profiles in two-layer binary metallic systems are virtually independent of the partial diffusion coefficients; for the systems with the average concentration of components that is the same over the sample depth, the time of the thermal stabilization of the structural and phase state inhomogeneous over the depth grows according to a power law with increasing thickness of the system in such a manner that the thicknesses of the surface layers grow, while the thickness of the intermediate layer approaches a constant value. The results of the simulation of the processes of diffusion and phase formation in experimentally investigated layered binary systems Fe-Ti and Cu-Be upon sequential isothermal and isochronous annealings agree well with the experimental data.

Measuring and Overcoming Limits of the Saffman-Delbrück Model for Soap Film Viscosities

PubMed Central

Vivek, Skanda; Weeks, Eric R.

2015-01-01

We observe tracer particles diffusing in soap films to measure the two-dimensional (2D) viscous properties of the films. Saffman-Delbrück type models relate the single-particle diffusivity to parameters of the film (such as thickness h) for thin films, but the relation breaks down for thicker films. Notably, the diffusivity is faster than expected for thicker films, with the crossover at h/d = 5.2 ± 0.9 using the tracer particle diameter d. This indicates a crossover from purely 2D diffusion to diffusion that is more three-dimensional. We demonstrate that measuring the correlations of particle pairs as a function of their separation overcomes the limitations of the Saffman-Delbrück model and allows one to measure the viscosity of a soap film for any thickness. PMID:25822262

Measuring and overcoming limits of the Saffman-Delbrück model for soap film viscosities.

PubMed

Vivek, Skanda; Weeks, Eric R

2015-01-01

We observe tracer particles diffusing in soap films to measure the two-dimensional (2D) viscous properties of the films. Saffman-Delbrück type models relate the single-particle diffusivity to parameters of the film (such as thickness h) for thin films, but the relation breaks down for thicker films. Notably, the diffusivity is faster than expected for thicker films, with the crossover at h/d = 5.2 ± 0.9 using the tracer particle diameter d. This indicates a crossover from purely 2D diffusion to diffusion that is more three-dimensional. We demonstrate that measuring the correlations of particle pairs as a function of their separation overcomes the limitations of the Saffman-Delbrück model and allows one to measure the viscosity of a soap film for any thickness.

Responses to Cell Loss Become Restricted as the Supporting Cells in Mammalian Vestibular Organs Grow Thick Junctional Actin Bands That Develop High Stability

PubMed Central

Burns, Joseph C.

2014-01-01

Sensory hair cell (HC) loss is a major cause of permanent hearing and balance impairments for humans and other mammals. Yet, fish, amphibians, reptiles, and birds readily replace HCs and recover from such sensory deficits. It is unknown what prevents replacement in mammals, but cell replacement capacity declines contemporaneously with massive postnatal thickening of F-actin bands at the junctions between vestibular supporting cells (SCs). In non-mammals, SCs can give rise to regenerated HCs, and the bands remain thin even in adults. Here we investigated the stability of the F-actin bands between SCs in ears from chickens and mice and Madin-Darby canine kidney cells. Pharmacological experiments and fluorescence recovery after photobleaching (FRAP) of SC junctions in utricles from mice that express a γ-actin–GFP fusion protein showed that the thickening F-actin bands develop increased resistance to depolymerization and exceptional stability that parallels a sharp decline in the cell replacement capacity of the maturing mammalian ear. The FRAP recovery rate and the mobile fraction of γ-actin–GFP both decreased as the bands thickened with age and became highly stabilized. In utricles from neonatal mice, time-lapse recordings in the vicinity of dying HCs showed that numerous SCs change shape and organize multicellular actin purse strings that reseal the epithelium. In contrast, adult SCs appeared resistant to deformation, with resealing responses limited to just a few neighboring SCs that did not form purse strings. The exceptional stability of the uniquely thick F-actin bands at the junctions of mature SCs may play an important role in restricting dynamic repair responses in mammalian vestibular epithelia. PMID:24478379

Bias induced transition from an ohmic to a non-ohmic interface in supramolecular tunneling junctions with Ga2O3/EGaIn top electrodes.

PubMed

Wimbush, Kim S; Fratila, Raluca M; Wang, Dandan; Qi, Dongchen; Liang, Cao; Yuan, Li; Yakovlev, Nikolai; Loh, Kian Ping; Reinhoudt, David N; Velders, Aldrik H; Nijhuis, Christian A

2014-10-07

This study describes that the current rectification ratio, R ≡ |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electrical characteristics when biased in the voltage range of ±1.0 V. The increase in R is caused by the presence of water and ions in the supramolecular assemblies which react with the Ga2O3/EGaIn layer and increase the thickness of the Ga2O3 layer. This increase in the oxide thickness from 0.7 nm to ∼2.0 nm changed the nature of the monolayer-top-electrode contact from an ohmic to a non-ohmic contact. These results unambiguously expose the experimental conditions that allow for a safe bias window of ±1.0 V (the range of biases studies of charge transport using this technique are normally conducted) to investigate molecular effects in molecular electronic junctions with Ga2O3/EGaIn top-electrodes where electrochemical reactions are not significant. Our findings also show that the interpretation of data in studies involving applied biases of >1.0 V may be complicated by electrochemical side reactions which can be recognized by changes of the electrical characteristics as a function voltage cycling or in current retention experiments.

Responses to cell loss become restricted as the supporting cells in mammalian vestibular organs grow thick junctional actin bands that develop high stability.

PubMed

Burns, Joseph C; Corwin, Jeffrey T

2014-01-29

Sensory hair cell (HC) loss is a major cause of permanent hearing and balance impairments for humans and other mammals. Yet, fish, amphibians, reptiles, and birds readily replace HCs and recover from such sensory deficits. It is unknown what prevents replacement in mammals, but cell replacement capacity declines contemporaneously with massive postnatal thickening of F-actin bands at the junctions between vestibular supporting cells (SCs). In non-mammals, SCs can give rise to regenerated HCs, and the bands remain thin even in adults. Here we investigated the stability of the F-actin bands between SCs in ears from chickens and mice and Madin-Darby canine kidney cells. Pharmacological experiments and fluorescence recovery after photobleaching (FRAP) of SC junctions in utricles from mice that express a γ-actin-GFP fusion protein showed that the thickening F-actin bands develop increased resistance to depolymerization and exceptional stability that parallels a sharp decline in the cell replacement capacity of the maturing mammalian ear. The FRAP recovery rate and the mobile fraction of γ-actin-GFP both decreased as the bands thickened with age and became highly stabilized. In utricles from neonatal mice, time-lapse recordings in the vicinity of dying HCs showed that numerous SCs change shape and organize multicellular actin purse strings that reseal the epithelium. In contrast, adult SCs appeared resistant to deformation, with resealing responses limited to just a few neighboring SCs that did not form purse strings. The exceptional stability of the uniquely thick F-actin bands at the junctions of mature SCs may play an important role in restricting dynamic repair responses in mammalian vestibular epithelia.

Simultaneous cell death and desquamation of the embryonic diffusion barrier during epidermal development.

PubMed

Saathoff, Manuela; Blum, Barbara; Quast, Thomas; Kirfel, Gregor; Herzog, Volker

2004-10-01

The periderm is an epithelial layer covering the emerging epidermis in early embryogenesis of vertebrates. In the chicken embryo, an additional cellular layer, the subperiderm, occurs at later embryonic stages underneath the periderm. The questions arose what is the function of both epithelial layers and, as they are transitory structures, by which mechanism are they removed. By immunocytochemistry, the tight junction (TJ) proteins occludin and claudin-1 were localized in the periderm and in the subperiderm, and sites of close contact between adjacent cells were detected by electron microscopy. Using horseradish peroxidase (HRP) as tracer, these contacts were identified as tight junctions involved in the formation of the embryonic diffusion barrier. This barrier was lost by desquamation at the end of the embryonic period, when the cornified envelope of the emerging epidermis was formed. By TUNEL and DNA ladder assays, we detected simultaneous cell death in the periderm and the subperiderm shortly before hatching. The absence of caspases-3, -6, and -7 activity, key enzymes of apoptosis, and the lack of typical morphological criteria of apoptosis such as cell fragmentation or membrane blebbing point to a special form of programmed cell death (PCD) leading to the desquamation of the embryonic diffusion barrier. Copyright 2004 Elsevier Inc.

Room-temperature detection of mobile impurities in compound semiconductors by transient ion drift

NASA Astrophysics Data System (ADS)

Lyubomirsky, Igor; Rabinal, M. K.; Cahen, David

1997-05-01

We show that the transient ion drift (TID) method, which is based on recording junction capacitance under constant reverse bias [A. Zamouche, T. Heiser, and A. Mesli, Appl. Phys. Lett. 66, 631 (1995)], can be used not only for measurements of the diffusion coefficient of mobile impurities, but also to estimate the concentration of mobile species as part of the total dopant density. This is illustrated for CdTe, contaminated by Cu, and intentionally doped by Li or Ag and for CuInSe2. We show also that, with some restrictions, the TID method can be used if the mobile ions are major dopants. This is demonstrated using Schottky barriers on CdTe, and p-n junction devices in (Hg,Cd)Te, and CuInSe2. The values that we obtain for the diffusion coefficients (for Li, Ag, and Cu in CdTe and for Cu in CuInSe2) agree well with measured or extrapolated values, obtained by other methods, as reported in the literature. Furthermore, we could distinguish between diffusion and chemical reactions of dopants, as demonstrated for the case of Cu in CdTe and Ag-doped (Hg,Cd)Te. In the former case this allows us to separate copper-free from contaminated CdTe samples.

Additive Effects of Rebamipide Plus Proton Pump Inhibitors on the Expression of Tight Junction Proteins in a Rat Model of Gastro-Esophageal Reflux Disease.

PubMed

Gweon, Tae-Geun; Park, Jong-Hyung; Kim, Byung-Wook; Choi, Yang Kyu; Kim, Joon Sung; Park, Sung Min; Kim, Chang Whan; Kim, Hyung-Gil; Chung, Jun-Won

2018-01-15

The aim of this study was to investigate the effects of rebamipide on tight junction proteins in the esophageal mucosa in a rat model of gastroesophageal reflux disease (GERD). GERD was created in rats by tying the proximal stomach. The rats were divided into a control group, a proton pump inhibitor (PPI) group, and a PPI plus rebamipide (PPI+R) group. Pantoprazole (5 mg/kg) was administered intraperitoneally to the PPI and PPI+R groups. An additional dose of rebamipide (100 mg/kg) was administered orally to the PPI+R group. Mucosal erosions, epithelial thickness, and leukocyte infiltration into the esophageal mucosa were measured in isolated esophagi 14 days after the procedure. A Western blot analysis was conducted to measure the expression of claudin-1, -3, and -4. The mean surface area of mucosal erosions, epithelial thickness, and leukocyte infiltration were lower in the PPI group and the PPI+R group than in the control group. Western blot analysis revealed that the expression of claudin-3 and -4 was significantly higher in the PPI+R group than in the control group. Rebamipide may exert an additive effect in combination with PPI to modify the tight junction proteins of the esophageal mucosa in a rat model of GERD. This treatment might be associated with the relief of GERD symptoms.

Strain-balanced type-II superlattices for efficient multi-junction solar cells.

PubMed

Gonzalo, A; Utrilla, A D; Reyes, D F; Braza, V; Llorens, J M; Fuertes Marrón, D; Alén, B; Ben, T; González, D; Guzman, A; Hierro, A; Ulloa, J M

2017-06-21

Multi-junction solar cells made by assembling semiconductor materials with different bandgap energies have hold the record conversion efficiencies for many years and are currently approaching 50%. Theoretical efficiency limits make use of optimum designs with the right lattice constant-bandgap energy combination, which requires a 1.0-1.15 eV material lattice-matched to GaAs/Ge. Nevertheless, the lack of suitable semiconductor materials is hindering the achievement of the predicted efficiencies, since the only candidates were up to now complex quaternary and quinary alloys with inherent epitaxial growth problems that degrade carrier dynamics. Here we show how the use of strain-balanced GaAsSb/GaAsN superlattices might solve this problem. We demonstrate that the spatial separation of Sb and N atoms avoids the ubiquitous growth problems and improves crystal quality. Moreover, these new structures allow for additional control of the effective bandgap through the period thickness and provide a type-II band alignment with long carrier lifetimes. All this leads to a strong enhancement of the external quantum efficiency under photovoltaic conditions with respect to bulk layers of equivalent thickness. Our results show that GaAsSb/GaAsN superlattices with short periods are the ideal (pseudo)material to be integrated in new GaAs/Ge-based multi-junction solar cells that could approach the theoretical efficiency limit.

Optimization of Al2O3/TiO2/Al 2O3 Multilayer Antireflection Coating With X-Ray Scattering Techniques

NASA Astrophysics Data System (ADS)

Li, Chao

Broadband multilayer antireflection coatings (ARCs) are keys to improving solar cell efficiencies. The goal of this dissertation is to optimize the multilayer Al2O3/TiO2/Al2O 3 ARC designed for a III-V space multi-junction solar cell with understanding influences of post-annealing and varying deposition parameters on the optical properties. Accurately measuring optical properties is important in accessing optical performances of ARCs. The multilayer Al2O3/TiO 2/Al2O3 ARC and individual Al2O 3 and TiO2 layers were characterized by a novel X-ray reflectivity (XRR) method and a combined method of grazing-incidence small angle X-ray scattering (GISAXS), atomic force microscopy (AFM), and XRR developed in this study. The novel XRR method combining an enhanced Fourier analysis with specular XRR simulation effectively determines layer thicknesses and surface and interface roughnesses and/or grading with sub-nanometer precision, and densities less than three percent uncertainty. Also, the combined method of GISAXS, AFM, and XRR characterizes the distribution of pore size with one-nanometer uncertainty. Unique to this method, the diffuse scattering from surface and interface roughnesses is estimated with surface parameters (root mean square roughness sigma, lateral correlation length ξ, and Hurst parameter h) obtained from AFM, and layer densities, surface grading and interface roughness/grading obtained from specular XRR. It is then separated from pore scattering. These X-ray scattering techniques obtained consistent results and were validated by other techniques including optical reflectance, spectroscopic ellipsometry (SE), glancing incidence X-ray diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy. The ARCs were deposited by atomic layer deposition with standard parameters at 200 °C. The as-deposited individual Al2O3 layer on Si is porous and amorphous as indicated by the combined methods of GISAXS, AFM, and XRR. Both post-annealing at 400 °C for 40 min in air and varying ALD parameters can eliminate pores, and lead to consistent increases in density and refractive index determined by the XRR method, SE, and optical reflectance measurements. After annealing, the layer remains amorphous. On the other hand, the as-deposited TiO 2 layer is non-porous and amorphous. It is densified and crystallized after annealing at 400 °C for 10 min in air. The multilayer Al2O 3/TiO2/Al2O3 ARC deposited on Si has surface and interface roughnesses and/or grading on the order of one nanometer. Annealing at 400 °C for 10 min in air induces densification and crystallization of the amorphous TiO2 layer as well as possible chemical reactions between TiO2 and Si diffusing from the substrate. On the other hand, Al2O3 layers remain amorphous after annealing. The thickness of the top Al2O3 layer decreases - likely due to interdiffusion between the top two layers and loss of hydrogen from hydroxyl groups initially present in the ALD layers. The thickness of the bottom Al2O3 layer increases, probably due to the diffusion of Si atoms into the bottom layer. In addition, the multilayer Al 2O3/TiO2/Al2O3 ARC was deposited on AlInP (30nm) / GaInP (100nm) / GaAs that includes the topmost layers of III-V multi-junction solar cells. Reflectance below 5 % is achieved within nearly the whole wavelength range of the current-limiting sub-cell. Also, internal scattering occurs in the TiO2 layer possibly associated with the initiated crystallization in the TiO2 layer while absent in the amorphous Al2O3 layers.

Ultra-low specific on-resistance 700V LDMOS with a buried super junction layer

NASA Astrophysics Data System (ADS)

Wang, Hai-Shi; Li, Zhi-you; Li, Ke; Qiao, Ming

2018-01-01

An ultra-low specific on-resistance 700 V lateral double-diffused MOSFET (LDMOS) with a buried super junction (BSJ) layer is proposed. [1-9] Buried P-pillars in the LDMOS can be depleted by neighboring N-pillars, overlying and underlying N-drift regions simultaneously, thus allowing a higher doping concentration. Consequently, the doping concentration of either the N-drift regions or N-pillars, or both, may also be increased therewith to compensate the surplus charges in the P-pillars. Compared with conventional surface super junction (SSJ) LDMOS, in which the super junction layer is implemented at the upper surface of the drift region, and P-pillars can only be depleted by the adjacent N-pillars and the N-drift regions beneath, the proposed novel LDMOS structure may have a lower specific on-resistance (Ron,sp) while maintain the same breakdown voltage (BV). Simulation results indicate that the Ron,sp of the novel structure is only 80.5 mΩ cm2 with a high BV of 750 V, which is reduced by 17% in comparison with the Ron,sp of a conventional SSJ LDMOS.

Low-high junction theory applied to solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Baraona, C. R.; Brandhorst, H. W., Jr.

1973-01-01

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open circuit voltage and improved radiation resistance. Several analytical models for open circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero SRV case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells. Detailed descriptions and derivations for the models are included. The correspondences between them are discussed. This modeling suggests that the meaning of minority carrier diffusion length measured in BSF cells be reexamined.

Size-dependent magnetic tuning of lateral photovoltaic effect in nonmagnetic Si-based Schottky junctions

PubMed Central

Zhou, Peiqi; Gan, Zhikai; Huang, Xu; Mei, Chunlian; Xia, Yuxing; Wang, Hui

2017-01-01

In this article, we report a magnetic tuning lateral photovoltaic effect (LPE) in a nonmagnetic Si-based Schottky junctions. In the magnetic field intensity range of 0 to 1.6 T, the variation amplitude of LPE sensitivity is as high as 94.8%, the change of LPV is and the change rate of lateral photo-voltage even reaches 520 mV/T at 1.5 T, which is apparently higher than the results of previous reported researches in magnetic materials. This effect is attributed to the combined result of the influence of magnetic field on diffusion current and the rectification property of our anisotropic structure. This work may expand the application of LPE in magnetism field such as magnetic sensor and magnetoresistance, and it suggests a new way to investigate the carrier transport in Schottky junctions under magnetic field. PMID:28397819

Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

DOEpatents

Welch, James D.

2000-01-01

Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

Selective doping of silicon nanowires by means of electron beam stimulated oxide etching.

PubMed

Pennelli, G; Totaro, M; Piotto, M

2012-02-08

Direct patterning of silicon dioxide by means of electron beam stimulated etching is shown, and a full characterization of exposure dose is presented. For its high dose, this technique is unsuitable for large areas but can be usefully employed like a precision scalpel for removing silicon dioxide by well-localized points. In this work, this technique is applied to the definition of windows through the oxide surrounding top down fabricated n-doped silicon nanowires. These windows will be employed for a selective doping of the nanowire by boron diffusion. In this way, pn junctions can be fabricated in well-localized points in the longitudinal direction of the nanowire, and an electrical contact to the different junctions can be provided. Electrical I-V characteristics of a nanowire with pn longitudinal junctions are reported and discussed. © 2012 American Chemical Society

Octopus microvasculature: permeability to ferritin and carbon.

PubMed

Browning, J

1979-01-01

The permeability of Octopus microvasculature was investigated by intravascular injection of carbon and ferritin. Vessels were tight to carbon while ferritin penetrated the pericyte junction, and was found extravascularly 1-2 min after its introduction. Vesicles occurred rarely in pericytes; fenestrae were absent. The discontinuous endothelial layer did not consitute a permeability barrier. The basement membrane, although retarding the movement of ferritin, was permeable to it; carbon did not penetrate the basement membrane. Evidence indicated that ferritin, and thus similarly sized and smaller water soluble materials, traverse the pericyte junction as a result of bulk fluid flow. Comparisons are made with the convective (or junctional) and slower, diffusive (or vesicular) passage of materials known to occur across the endothelium of continuous capillaries in mammals. Previous macrophysiological determinations concerning the permeability of Octopus vessels are questioned in view of these findings. Possible reasons for some major structural differences in the microcirculatory systems of cephalopods and vertebrates are briefly discussed.

Bioglass promotes wound healing by affecting gap junction connexin 43 mediated endothelial cell behavior.

PubMed

Li, Haiyan; He, Jin; Yu, Hongfei; Green, Colin R; Chang, Jiang

2016-04-01

It is well known that gap junctions play an important role in wound healing, and bioactive glass (BG) has been shown to help healing when applied as a wound dressing. However, the effects of BG on gap junctional communication between cells involved in wound healing is not well understood. We hypothesized that BG may be able to affect gap junction mediated cell behavior to enhance wound healing. Therefore, we set out to investigate the effects of BG on gap junction related behavior of endothelial cells in order to elucidate the mechanisms through which BG is operating. In in vitro studies, BG ion extracts prevented death of human umbilical vein endothelial cells (HUVEC) following hypoxia in a dose dependent manner, possibly through connexin hemichannel modulation. In addition, BG showed stimulatory effects on gap junction communication between HUVECs and upregulated connexin43 (Cx43) expression. Furthermore, BG prompted expression of vascular endothelial growth factor and basic fibroblast growth factor as well as their receptors, and vascular endothelial cadherin in HUVECs, all of which are beneficial for vascularization. In vivo wound healing results showed that the wound closure of full-thickness excisional wounds of rats was accelerated by BG with reduced inflammation during initial stages of healing and stimulated angiogenesis during the proliferation stage. Therefore, BG can stimulate wound healing through affecting gap junctions and gap junction related endothelial cell behaviors, including prevention of endothelial cell death following hypoxia, stimulation of gap junction communication and upregulation of critical vascular growth factors, which contributes to the enhancement of angiogenesis in the wound bed and finally to accelerate wound healing. Although many studies have reported that BG stimulates angiogenesis and wound healing, this work reveals the relationship between BG and gap junction connexin 43 mediated endothelial cell behavior and elucidates one of the possible mechanisms through which BG stimulates wound healing. Copyright © 2016 Elsevier Ltd. All rights reserved.

Method for fabricating silicon cells

DOEpatents

Ruby, D.S.; Basore, P.A.; Schubert, W.K.

1998-08-11

A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

Silicon-fiber blanket solar-cell array concept

NASA Technical Reports Server (NTRS)

Eliason, J. T.

1973-01-01

Proposed economical manufacture of solar-cell arrays involves parallel, planar weaving of filaments made of doped silicon fibers with diffused radial junction. Each filament is a solar cell connected either in series or parallel with others to form a blanket of deposited grids or attached electrode wire mesh screens.

Diffusive and martensitic nucleation kinetics in solid-solid transitions of colloidal crystals

NASA Astrophysics Data System (ADS)

Peng, Yi; Li, Wei; Wang, Feng; Still, Tim; Yodh, Arjun G.; Han, Yilong

2017-05-01

Solid-solid transitions between crystals follow diffusive nucleation, or various diffusionless transitions, but these kinetics are difficult to predict and observe. Here we observed the rich kinetics of transitions from square lattices to triangular lattices in tunable colloidal thin films with single-particle dynamics by video microscopy. Applying a small pressure gradient in defect-free regions or near dislocations markedly transform the diffusive nucleation with an intermediate-stage liquid into a martensitic generation and oscillation of dislocation pairs followed by a diffusive nucleus growth. This transformation is neither purely diffusive nor purely martensitic as conventionally assumed but a combination thereof, and thus presents new challenges to both theory and the empirical criterion of martensitic transformations. We studied how pressure, density, grain boundary, triple junction and interface coherency affect the nucleus growth, shape and kinetic pathways. These novel microscopic kinetics cast new light on control solid-solid transitions and microstructural evolutions in polycrystals.

Diffusive and martensitic nucleation kinetics in solid-solid transitions of colloidal crystals

PubMed Central

Peng, Yi; Li, Wei; Wang, Feng; Still, Tim; Yodh, Arjun G.; Han, Yilong

2017-01-01

Solid–solid transitions between crystals follow diffusive nucleation, or various diffusionless transitions, but these kinetics are difficult to predict and observe. Here we observed the rich kinetics of transitions from square lattices to triangular lattices in tunable colloidal thin films with single-particle dynamics by video microscopy. Applying a small pressure gradient in defect-free regions or near dislocations markedly transform the diffusive nucleation with an intermediate-stage liquid into a martensitic generation and oscillation of dislocation pairs followed by a diffusive nucleus growth. This transformation is neither purely diffusive nor purely martensitic as conventionally assumed but a combination thereof, and thus presents new challenges to both theory and the empirical criterion of martensitic transformations. We studied how pressure, density, grain boundary, triple junction and interface coherency affect the nucleus growth, shape and kinetic pathways. These novel microscopic kinetics cast new light on control solid–solid transitions and microstructural evolutions in polycrystals. PMID:28504246

Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n{sup +}-Si junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saito, Y., E-mail: yoshiaki.saito@toshiba.co.jp; Ishikawa, M.; Sugiyama, H.

2015-05-07

Correlation between the amplitude of the spin accumulation signals and the effective barrier height estimated from the slope of the log (RA) - t{sub MgO} plot (RA: resistance area product, t{sub MgO}: thickness of MgO tunnel barrier) in CoFe/MgO/n{sup +}-Si junctions was investigated. The amplitude of spin accumulation signals increases with increasing effective barrier heights. This increase of the amplitude of spin accumulation is originated from the increase of the spin polarization (P{sub Si}) in Si. The estimated absolute values of P{sub Si} using three-terminal Hanle signals are consistent with those estimated by four-terminal nonlocal-magnetoresistance (MR) and two-terminal local-MR. Tomore » demonstrate large spin accumulation in Si bulk band and enhance the local-MR through Si channel, these results indicate that the increase of the effective barrier height at ferromagnet/(tunnel barrier)/n{sup +}-Si junction electrode is important.« less

Electron-beam induced current characterization of back-surface field solar cells using a chopped scanning electron microscope beam

NASA Technical Reports Server (NTRS)

Luke, K. L.; Cheng, L.-J.

1984-01-01

A chopped electron beam induced current (EBIC) technique for the chacterization of back-surface field (BSF) solar cells is presented. It is shown that the effective recombination velocity of the low-high junction forming the back-surface field of BSF cells, in addition to the diffusion length and the surface recombination velocity of the surface perpendicular to both the p-n and low-high junctions, can be determined from the data provided by a single EBIC scan. The method for doing so is described and illustrated. Certain experimental considerations taken to enhance the quality of the EBIC data are also discussed.

Loss of tight junction barrier function and its role in cancer metastasis.

PubMed

Martin, Tracey A; Jiang, Wen G

2009-04-01

As the most apical structure between epithelial and endothelial cells, tight junctions (TJ) are well known as functioning as a control for the paracellular diffusion of ions and certain molecules. It has however, become increasingly apparent that the TJ has a vital role in maintaining cell to cell integrity and that the loss of cohesion of the structure can lead to invasion and thus metastasis of cancer cells. This article will present data showing how modulation of expression of TJ molecules results in key changes in TJ barrier function leading to the successful metastasis of a number of different cancer types.

Process for utilizing low-cost graphite substrates for polycrystalline solar cells

NASA Technical Reports Server (NTRS)

Chu, T. L. (Inventor)

1978-01-01

Low cost polycrystalline silicon solar cells supported on substrates were prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices were formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon was substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.

Sensor fabrication method for in situ temperature and humidity monitoring of light emitting diodes.

PubMed

Lee, Chi-Yuan; Su, Ay; Liu, Yin-Chieh; Chan, Pin-Cheng; Lin, Chia-Hung

2010-01-01

In this work micro temperature and humidity sensors are fabricated to measure the junction temperature and humidity of light emitting diodes (LED). The junction temperature is frequently measured using thermal resistance measurement technology. The weakness of this method is that the timing of data capture is not regulated by any standard. This investigation develops a device that can stably and continually measure temperature and humidity. The device is light-weight and can monitor junction temperature and humidity in real time. Using micro-electro-mechanical systems (MEMS), this study minimizes the size of the micro temperature and humidity sensors, which are constructed on a stainless steel foil substrate (40 μm-thick SS-304). The micro temperature and humidity sensors can be fixed between the LED chip and frame. The sensitivities of the micro temperature and humidity sensors are 0.06±0.005 (Ω/°C) and 0.033 pF/%RH, respectively.

Four-junction AlGaAs/GaAs laser power converter

NASA Astrophysics Data System (ADS)

Huang, Jie; Sun, Yurun; Zhao, Yongming; Yu, Shuzhen; Dong, Jianrong; Xue, Jiping; Xue, Chi; Wang, Jin; Lu, Yunqing; Ding, Yanwen

2018-04-01

Four-junction AlGaAs/GaAs laser power converters (LPCs) with n+-GaAs/p+-Al0.37Ga0.63As heterostructure tunnel junctions (TJs) have been designed and grown by metal-organic chemical vapor deposition (MOCVD) for converting the power of 808 nm lasers. A maximum conversion efficiency η c of 56.9% ± 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current–voltage (I–V) characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC. Project financially supported by the National Natural Science Foundation of China (No. 61376065) and Zhongtian Technology Group Co. Ltd.

Silicon nitride tri-layer vertical Y-junction and 3D couplers with arbitrary splitting ratio for photonic integrated circuits.

PubMed

Shang, Kuanping; Pathak, Shibnath; Liu, Guangyao; Feng, Shaoqi; Li, Siwei; Lai, Weicheng; Yoo, S J B

2017-05-01

We designed and demonstrated a tri-layer Si₃N₄/SiO₂ photonic integrated circuit capable of vertical interlayer coupling with arbitrary splitting ratios. Based on this multilayer photonic integrated circuit platform with each layer thicknesses of 150 nm, 50 nm, and 150 nm, we designed and simulated the vertical Y-junctions and 3D couplers with arbitrary power splitting ratios between 1:10 and 10:1 and with negligible(< -50 dB) reflection. Based on the design, we fabricated and demonstrated tri-layer vertical Y-junctions with the splitting ratios of 1:1 and 3:2 with excess optical losses of 0.230 dB. Further, we fabricated and demonstrated the 1 × 3 3D couplers with the splitting ratio of 1:1:4 for symmetric structures and variable splitting ratio for asymmetric structures.

Dual Control of Giant Field-like Spin Torque in Spin Filter Tunnel Junctions

PubMed Central

Tang, Y. -H.; Chu, F. -C.; Kioussis, Nicholas

2015-01-01

We predict a giant field-like spin torque, , in spin-filter (SF) barrier tunnel junctions in sharp contrast to existing junctions based on nonmagnetic passive barriers. We demonstrate that has linear bias behavior, is independent of the SF thickness, and has odd parity with respect to the SF’s exchange splitting. Thus, it can be selectively controlled via external bias or external magnetic field which gives rise to sign reversal of via magnetic field switching. The underlying mechanism is the interlayer exchange coupling between the noncollinear magnetizations of the SF and free ferromagnetic electrode via the nonmagnetic insulating (I) spacer giving rise to giant spin-dependent reflection at the SF/I interface. These findings suggest that the proposed field-like-spin-torque MRAM may provide promising dual functionalities for both ‘reading’ and ‘writing’ processes which require lower critical current densities and faster writing and reading speeds. PMID:26095146

Epitaxial solar cells fabrication

NASA Technical Reports Server (NTRS)

Daiello, R. V.; Robinson, P. H.; Kressel, H.

1975-01-01

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

A novel method for computing effective diffusivity: Application to helium implanted α-Fe thin films

NASA Astrophysics Data System (ADS)

Dunn, Aaron; Agudo-Merida, Laura; Martin-Bragado, Ignacio; McPhie, Mathieu; Cherkaoui, Mohammed; Capolungo, Laurent

2014-05-01

The effective diffusivity of helium in thin iron films is quantified using spatially resolved stochastic cluster dynamics and object kinetic Monte Carlo simulations. The roles of total displacement dose (in DPA), damage rate, helium to DPA ratio, layer thickness, and damage type (cascade damage vs Frenkel pair implantation) on effective He diffusivity are investigated. Helium diffusivity is found to decrease with increasing total damage and decreasing damage rate. Arrhenius plots show strongly increased helium diffusivity at high temperatures, high total implantation, and low implantation rates due to decreased vacancy and vacancy cluster concentrations. At low temperatures, effective diffusivity is weakly dependent on foil thickness while at high temperatures, narrower foils prevent defect accumulation by releasing all defects at the free surfaces. Helium to DPA ratio is not shown to strongly change helium diffusivity in the range of irradiation conditions simulated. Frenkel pair implantation is shown to cause higher effective diffusivity and more complex diffusion mechanisms than cascade implantation. The results of these simulations indicate that the differences in damage rates between implantation experiments and fission or fusion environments may result in differences in the final microstructure.

Estrogen Modulates Expression of Tight Junction Proteins in Rat Vagina

PubMed Central

Oh, Kyung-Jin; Ahn, Kyuyoun

2016-01-01

Background. The objectives of this study were to investigate the localization of tight junctions and the modulation of zonula occludens- (ZO-) 1, occludin and claudin-1 expression by estrogen in castrated female rat vagina. Female Sprague-Dawley rats (230–240 g, n = 45) were divided into three groups and subjected to a sham operation (control group, n = 15), bilateral ovariectomy (Ovx group, n = 15), or bilateral ovariectomy followed by daily subcutaneous injection of 17β-estradiol (50 μg/kg/day, Ovx + Est group, n = 15). The cellular localization and expression of ZO-1, occludin, and claudin-1 were determined in each group by immunohistochemistry and western blot. Results. Expression of ZO-1 was diffuse in all groups, with the highest intensity in the superficial epithelium in the control group. Occludin was localized in the intermediate and basal epithelium. Claudin-1 was most intense in the superficial layer of the vaginal epithelium in the control group. Expression of ZO-1, occludin, and claudin-1 was significantly decreased after ovariectomy and was restored to the level of the control after estrogen replacement. Conclusions. Tight junctions are distinctly localized in rat vagina, and estrogen modulates the expression of tight junctions. Further researches are needed to clarify the functional role of tight junctions in vaginal lubrication. PMID:27127786

Estrogen Modulates Expression of Tight Junction Proteins in Rat Vagina.

PubMed

Oh, Kyung-Jin; Lee, Hyun-Suk; Ahn, Kyuyoun; Park, Kwangsung

2016-01-01

Background. The objectives of this study were to investigate the localization of tight junctions and the modulation of zonula occludens- (ZO-) 1, occludin and claudin-1 expression by estrogen in castrated female rat vagina. Female Sprague-Dawley rats (230-240 g, n = 45) were divided into three groups and subjected to a sham operation (control group, n = 15), bilateral ovariectomy (Ovx group, n = 15), or bilateral ovariectomy followed by daily subcutaneous injection of 17β-estradiol (50 μg/kg/day, Ovx + Est group, n = 15). The cellular localization and expression of ZO-1, occludin, and claudin-1 were determined in each group by immunohistochemistry and western blot. Results. Expression of ZO-1 was diffuse in all groups, with the highest intensity in the superficial epithelium in the control group. Occludin was localized in the intermediate and basal epithelium. Claudin-1 was most intense in the superficial layer of the vaginal epithelium in the control group. Expression of ZO-1, occludin, and claudin-1 was significantly decreased after ovariectomy and was restored to the level of the control after estrogen replacement. Conclusions. Tight junctions are distinctly localized in rat vagina, and estrogen modulates the expression of tight junctions. Further researches are needed to clarify the functional role of tight junctions in vaginal lubrication.

Ultrasonographic characteristics of the abdominal esophagus and cardia in dogs.

PubMed

Gory, Guillaume; Rault, Delphine N; Gatel, Laure; Dally, Claire; Belli, Patrick; Couturier, Laurent; Cauvin, Eddy

2014-01-01

Differential diagnoses for regurgitation and vomiting in dogs include diseases of the gastroesophageal junction. The purpose of this cross-sectional study was to describe ultrasonographic characteristics of the abdominal esophagus and gastric cardia in normal dogs and dogs with clinical disease involving this region. A total of 126 dogs with no clinical signs of gastrointestinal disease and six dogs with clinical diseases involving the gastroesophageal junction were included. For seven euthanized dogs, ultrasonographic features were also compared with gross pathology and histopathology. Cardial and abdominal esophageal wall thicknesses were measured ultrasonographically for all normal dogs and effects of weight, sex, age, and stomach filling were tested. Five layers could be identified in normal esophageal and cardial walls. The inner esophageal layer was echogenic, corresponding to the cornified mucosa and glandular portion of the submucosa. The cardia was characterized by a thick muscularis, and a transitional zone between echogenic esophageal and hypoechoic gastric mucosal layers. Mean (±SD) cardial wall thicknesses for normal dogs were 7.6 mm (±1.6), 9.7 mm (±1.8), 10.8 mm (±1.6), 13.3 mm (±2.5) for dogs in the <10 kg, 10-19.9 kg, 20-29.9 kg and ≥30 kg weight groups, respectively. Mean (±SD) esophageal wall thicknesses were: 4.1 mm (±0.6), 5.1 mm (±1.3), 5.6 mm (±1), and 6.4 mm (±1.1) for the same weight groups, respectively. Measurements of wall thickness were significantly correlated with dog weight group. Ultrasonography assisted diagnosis in all six clinically affected dogs. Findings supported the use of transabdominal ultrasonography as a diagnostic test for dogs with suspected gastroesophageal disease. © 2014 American College of Veterinary Radiology.

GUARD RING SEMICONDUCTOR JUNCTION

DOEpatents

Goulding, F.S.; Hansen, W.L.

1963-12-01

A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

Red blood cell thickness is evolutionarily constrained by slow, hemoglobin-restricted diffusion in cytoplasm.

PubMed

Richardson, Sarah L; Swietach, Pawel

2016-10-25

During capillary transit, red blood cells (RBCs) must exchange large quantities of CO 2 and O 2 in typically less than one second, but the degree to which this is rate-limited by diffusion through cytoplasm is not known. Gas diffusivity is intuitively assumed to be fast and this would imply that the intracellular path-length, defined by RBC shape, is not a factor that could meaningfully compromise physiology. Here, we evaluated CO 2 diffusivity (D CO2 ) in RBCs and related our results to cell shape. D CO2 inside RBCs was determined by fluorescence imaging of [H + ] dynamics in cells under superfusion. This method is based on the principle that H + diffusion is facilitated by CO 2 /HCO 3 - buffer and thus provides a read-out of D CO2 . By imaging the spread of H + ions from a photochemically-activated source (6-nitroveratraldehyde), D CO2 in human RBCs was calculated to be only 5% of the rate in water. Measurements on RBCs containing different hemoglobin concentrations demonstrated a halving of D CO2 with every 75 g/L increase in mean corpuscular hemoglobin concentration (MCHC). Thus, to compensate for highly-restricted cytoplasmic diffusion, RBC thickness must be reduced as appropriate for its MCHC. This can explain the inverse relationship between MCHC and RBC thickness determined from >250 animal species.

Red blood cell thickness is evolutionarily constrained by slow, hemoglobin-restricted diffusion in cytoplasm

PubMed Central

Richardson, Sarah L.; Swietach, Pawel

2016-01-01

During capillary transit, red blood cells (RBCs) must exchange large quantities of CO2 and O2 in typically less than one second, but the degree to which this is rate-limited by diffusion through cytoplasm is not known. Gas diffusivity is intuitively assumed to be fast and this would imply that the intracellular path-length, defined by RBC shape, is not a factor that could meaningfully compromise physiology. Here, we evaluated CO2 diffusivity (DCO2) in RBCs and related our results to cell shape. DCO2 inside RBCs was determined by fluorescence imaging of [H+] dynamics in cells under superfusion. This method is based on the principle that H+ diffusion is facilitated by CO2/HCO3− buffer and thus provides a read-out of DCO2. By imaging the spread of H+ ions from a photochemically-activated source (6-nitroveratraldehyde), DCO2 in human RBCs was calculated to be only 5% of the rate in water. Measurements on RBCs containing different hemoglobin concentrations demonstrated a halving of DCO2 with every 75 g/L increase in mean corpuscular hemoglobin concentration (MCHC). Thus, to compensate for highly-restricted cytoplasmic diffusion, RBC thickness must be reduced as appropriate for its MCHC. This can explain the inverse relationship between MCHC and RBC thickness determined from >250 animal species. PMID:27777410

A novel reduced symmetry oxide (Mg3B2O6) for magnetic tunnel junctions based on FeCo or Fe leads

NASA Astrophysics Data System (ADS)

Stewart, Derek

2010-03-01

Magnetic tunnel junctions with high TMR values, such as FeMgOFe, capitalize on spin filtering in the oxide due to the band symmetry of incident electrons. However, these structures rely on magnetic leads and oxide regions of the same cubic symmetry class. This raises the question of whether reducing the oxide symmetry can enhance spin filtering. A new magnetic tunnel junction (FeCoMg3B2O6FeCo) is presented that uses a reduced symmetry oxide region (orthorhombic) to filter spins between two cubic magnetic leads. Symmetry analysis of coupling between states in the cubic leads and the orthorhombic oxide indicates that majority carrier tunneling through the oxide should be favored over minority carriers. Complex band structure analysis of Mg3B2O6 shows that the relevant evanescent states in the band gap are due to boron p states and that there is sufficient difference in the decay rates of the imaginary bands for spin filtering to occur. Electronic transport calculations through a FeMg3B2O6Fe magnetic tunnel junction are also performed to address the possible influence of interface states. Some recent experimental studies of FeCoBMgOFeCoB junctions, with B diffusion into the MgO region, indicate that this new type of junction may have already been fabricated. The prospect of developing a general class of magnetic tunnel junctions based on reduced symmetry oxides is also examined.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Streza, M.; Dadarlat, D.; Strzałkowski, K.

An accurate determination of thermophysical properties such as thermal diffusivity, thermal effusivity and thermal conductivity is extremely important for characterization and quality assurance of semiconductors. Thermal diffusivity and effusivity of some binary semiconductors have been investigated. Two experimental techniques were used: a contact technique (PPE calorimetry) and a non contact technique (lock-in thermography). When working with PPE, in the back (BPPE) configuration and in the thermally thick regim of the pyroelectric sensor, we can get the thermal diffusivity of the sample by performing a scanning of the excitation frequency of radiation. Thermal effusivity is obtained in front configuration (sensor directlymore » irradiated and sample in back position) by performing a thickness scan of a coupling fluid. By using the lock-in thermography technique, the thermal diffusivity of the sample is obtained from the phase image. The results obtained by the two techniques are in good agreement. Nevertheless, for the determination of thermal diffusivity, lock-in thermography is preferred.« less

Influence of earlobe thickness on near infrared spectroscopy

NASA Astrophysics Data System (ADS)

Jiang, Jingying; Wang, Tianpei; Li, Si; Li, Lin; Liu, Jiajia; Xu, Kexin

2017-03-01

Near-infrared spectroscopy has been recognized as a potential technology for noninvasive blood glucose sensing. However, the detected spectral signal is unstable mainly because of (1) the weak light absorption of glucose itself within NIR range, (2) the influence of temperature and individual differences of biotissue. Our previous results demonstrated that the synergistic effect of both transmittance and reflectance could enhance the strength of the detection signal. In this talk, we design a set of experiments to analyze the effect of earlobe thickness on Near Infrared spectroscopic measurement by using home-made optical fiber probe within the wavelength of 1000-1600nm. Firstly, we made a MC simulation of single-layer skin model and five-layer skin model to get the diffused transmittance spectra and diffused reflectance spectra under different optaical path lengths. And then we obtain the spectra of the earlobes from different volunteers by the same way. The experimental results showed that with the increase of the thickness,the light intensity of diffused transmittance decreases, and the light intensity of diffused reflectance remaines substantially unchanged.

Coercivity enhancement of Dy-coated Nd-Fe-B flakes by crystallization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fukunaga, H.; Sugimoto, Y.; Nakano, M.

2011-04-01

The coercivity of isotropic Dy-coated Nd-Fe-B flakes was enhanced by crystallization and simultaneous diffusion of Dy from their surfaces. Amorphous Dy-coated Nd-Fe-B flakes were crystallized by heating them to 923 K 2over a 2 min period followed by rapid cooling. During crystallization, the Dy on the surface diffused into the flakes. This low-temperature rapid annealing produced flakes with fine grains and the Dy diffusion enhanced their coercivity. The coercivity after crystallization increased with increasing Dy layer thickness, although the remanence decreased when the layer thickness exceeded 3 {mu}m. Thick coatings of over 6 {mu}m resulted in the formation of DyFe{submore » 2}, which degraded the magnetic properties of the crystallized flakes. Flakes with a 3-{mu}m-thick coating exhibited excellent magnetic properties after annealing: They had a coercivity of 1880 kA/m and a remanence of 78 emu/g. This coercivity is approximately 500 kA/m higher than that of uncoated flakes, whereas the remanence is comparable to that of uncoated flakes.« less

Focused fluorescence excitation with time-reversed ultrasonically encoded light and imaging in thick scattering media

NASA Astrophysics Data System (ADS)

Lai, Puxiang; Suzuki, Yuta; Xu, Xiao; Wang, Lihong V.

2013-07-01

Scattering dominates light propagation in biological tissue, and therefore restricts both resolution and penetration depth in optical imaging within thick tissue. As photons travel into the diffusive regime, typically 1 mm beneath human skin, their trajectories transition from ballistic to diffusive due to the increased number of scattering events, which makes it impossible to focus, much less track, photon paths. Consequently, imaging methods that rely on controlled light illumination are ineffective in deep tissue. This problem has recently been addressed by a novel method capable of dynamically focusing light in thick scattering media via time reversal of ultrasonically encoded (TRUE) diffused light. Here, using photorefractive materials as phase conjugate mirrors, we show a direct visualization and dynamic control of optical focusing with this light delivery method, and demonstrate its application for focused fluorescence excitation and imaging in thick turbid media. These abilities are increasingly critical for understanding the dynamic interactions of light with biological matter and processes at different system levels, as well as their applications for biomedical diagnosis and therapy.

All high Tc edge-geometry weak links utilizing Y-Ba-Cu-O barrier layers

NASA Technical Reports Server (NTRS)

Hunt, B. D.; Foote, M. C.; Bajuk, L. J.

1991-01-01

High quality YBa2Cu3O(7-x) normal-metal/YBa2Cu3O(7-x) edge-geometry weak links have been fabricated using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25-100 A thick barrier layers exhibit current-voltage characteristics consistent with the resistively shunted junction model, with strong microwave and magnetic field response at temperatures up to 85 K. The critical currents vary exponentially with barrier thickness, and the resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area, indicating good barrier uniformity, with an effective mormal metal coherence length of 20 A.

Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Hugh; Todorov, Stan; Colombeau, Benjamin

2012-11-06

We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channelmore » rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.« less

Electrophoretic deposited TiO 2 pigment-based back reflectors for thin film solar cells

DOE PAGES

Bills, Braden; Morris, Nathan; Dubey, Mukul; ...

2015-01-16

Highly reflective coatings with strong light scattering effect have many applications in optical components and optoelectronic devices. This paper reports titanium dioxide (TiO 2) pigment-based reflectors that have 2.5 times higher broadband diffuse reflection than commercially produced aluminum or silver based reflectors and result in efficiency enhancements of a single-junction amorphous Si solar cell. Electrophoretic deposition is used to produce pigment-based back reflectors with high pigment density, controllable film thickness and site-specific deposition. Electrical conductivity of the pigment-based back reflectors is improved by creating electrical vias throughout the pigment-based back reflector by making holes using an electrical discharge / dielectricmore » breakdown approach followed by a second electrophoretic deposition of conductive nanoparticles into the holes. While previous studies have demonstrated the use of pigment-based back reflectors, for example white paint, on glass superstrate configured thin film Si solar cells, this work presents a scheme for producing pigment-based reflectors on complex shape and flexible substrates. Finally, mechanical durability and scalability are demonstrated on a continuous electrophoretic deposition roll-to-roll system which has flexible metal substrate capability of 4 inch wide and 300 feet long.« less

Diffusion behavior of Cu/Ta heterogeneous interface under high temperature and high strain: An atomistic investigation

NASA Astrophysics Data System (ADS)

Li, Ganglong; Wu, Houya; Luo, Honglong; Chen, Zhuo; Tay, Andrew A. O.; Zhu, Wenhui

2017-09-01

Three-dimensional (3D) integration technology using Cu interconnections has emerged as a promising solution to improve the performance of silicon microelectronic devices. However, Cu diffuses into SiO2 and requires a barrier layer such as Ta to ensure acceptable reliability. In this paper, the effects of temperature and strain normal to the interface on the inter-diffusion of Cu and Ta at annealing conditions are investigated using a molecular dynamics (MD) technique with embedded atomic method (EAM) potentials. Under thermal annealing conditions without strain, it is found that a Cu-rich diffusion region approximately 2 nm thick is formed at 1000 K after 10 ns of annealing. Ta is capable of diffusing into the interior of Cu but Cu hardly diffuses into the inner lattice of Ta. At the Cu side near the interface an amorphous structure is formed due to the process of diffusion. The diffusion activation energy of Cu and Ta are found to be 0.9769 and 0.586 eV, respectively. However, when a strain is applied, a large number of crystal defects are generated in the sample. As the strain is increased, extrinsic stacking faults (ESFs) and lots of Shockley partial dislocations appear. The density of the dislocations and the diffusion channels increase, promoting the diffusion of Cu atoms into the inner lattice of Ta. The thickness of the diffusion layer increases to 4 times the value when only a temperature load of 700 K is applied. The MD simulations demonstrated that Ta is very effective as a barrier layer under thermal loading only, and its effectiveness is impaired by tensile strain at the Cu/Ta interface. The simulations also clarified the mechanism that caused the impairment. The methodology and approach described in this paper can be followed further to study the effectiveness of barrier layers under various annealing and strain conditions, and to determine the minimum thickness of barrier layers required for a particular application.

Dependence of astigmatism, far-field pattern, and spectral envelope width on active layer thickness of gain guided lasers with narrow stripe geometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamine, T.

1984-06-15

The effects of active layer thickness on the astigmatism, the angle of far-field pattern width parallel to the junction, and the spectral envelope width of a gain guided laser with a narrow stripe geometry have been investigated analytically and experimentally. It is concluded that a large level of astigmatism, a narrow far-field pattern width, and a rapid convergence of the spectral envelope width are inherent to the gain guided lasers with thin active layers.

Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures

DTIC Science & Technology

2015-08-01

metal structures, memristors, resistive random access memory, RRAM, titanium dioxide, Zr40Cu35Al15Ni10, ZCAN, resistive memory, tunnel junction 16...TiO2 thickness ........................6 1 1. Introduction Resistive-switching memory elements based on metal-insulator-metal (MIM) diodes ...have attracted great interest due to their potential as components for simple, inexpensive, and high-density non-volatile storage devices. MIM diodes

An experimental evaluation of S-duct inlet-diffuser configurations for turboprop offset gearbox applications

NASA Technical Reports Server (NTRS)

Mcdill, Paul L.

1986-01-01

A test program, utilizing a large scale model, was run in the NASA Lewis Research Center 10- by 10-ft wind tunnel to examine the influence on performance of design parameters of turboprop S-duct inlet/diffuser systems. The parametric test program investigated inlet lip thickness, inlet/diffuser cross-sectional geometry, throat design Mach number, and shaft fairing shape. The test program was run at angles of attack to 15 deg and tunnel Mach numbers to 0.35. Results of the program indicate that current design techniques can be used to design inlet/diffuser systems with acceptable total pressure recovery, but several of the design parameters, notably lip thickness (contraction ratio) and shaft fairing cross section, must be optimized to prevent excessive distortion at the compressor face.

Comparative study of silver nanoparticle permeation using Side-Bi-Side and Franz diffusion cells

NASA Astrophysics Data System (ADS)

Trbojevich, Raul A.; Fernandez, Avelina; Watanabe, Fumiya; Mustafa, Thikra; Bryant, Matthew S.

2016-03-01

Better understanding the mechanisms of nanoparticle permeation through membranes and packaging polymers has important implications for the evaluation of drug transdermal uptake, in food safety and the environmental implications of nanotechnology. In this study, permeation of 21 nm diameter silver nanoparticles (AgNPs) was tested using Side-Bi-Side and Franz static diffusion cells through hydrophilic 0.1 and 0.05 µm pore diameter 125 µm thick synthetic cellulose membranes, and 16 and 120 µm thick low-density polyethylene (LDPE) films. Experiments performed with LDPE films discarded permeation of AgNPs or Ag ions over the investigated time-frame in both diffusion systems. But controlled release of AgNPs has been quantified using semipermeable hydrophilic membranes. The permeation followed a quasi-linear time-dependent model during the experimental time-frame, which represents surface reaction-limited permeation. Diffusive flux, diffusion coefficients, and membrane permeability were determined as a function of pore size and diffusion model. Concentration gradient and pore size were key to understand mass transfer phenomena in the diffusion systems.

The lateral mobility of cell adhesion molecules is highly restricted at septate junctions in Drosophila.

PubMed

Laval, Monique; Bel, Christophe; Faivre-Sarrailh, Catherine

2008-07-18

A complex of three cell adhesion molecules (CAMs) Neurexin IV(Nrx IV), Contactin (Cont) and Neuroglian (Nrg) is implicated in the formation of septate junctions between epithelial cells in Drosophila. These CAMs are interdependent for their localization at septate junctions and e.g. null mutation of nrx IV or cont induces the mislocalization of Nrg to the baso-lateral membrane. These mutations also result in ultrastructural alteration of the strands of septate junctions and breakdown of the paracellular barrier. Varicose (Vari) and Coracle (Cora), that both interact with the cytoplasmic tail of Nrx IV, are scaffolding molecules required for the formation of septate junctions. We conducted photobleaching experiments on whole living Drosophila embryos to analyze the membrane mobility of CAMs at septate junctions between epithelial cells. We show that GFP-tagged Nrg and Nrx IV molecules exhibit very stable association with septate junctions in wild-type embryos. Nrg-GFP is mislocalized to the baso-lateral membrane in nrx IV or cont null mutant embryos, and displays increased mobile fraction. Similarly, Nrx IV-GFP becomes distributed to the baso-lateral membrane in null mutants of vari and cora, and its mobile fraction is strongly increased. The loss of Vari, a MAGUK protein that interacts with the cytoplasmic tail of Nrx IV, has a stronger effect than the null mutation of nrx IV on the lateral mobility of Nrg-GFP. The strands of septate junctions display a stable behavior in vivo that may be correlated with their role of paracellular barrier. The membrane mobility of CAMs is strongly limited when they take part to the multimolecular complex forming septate junctions. This restricted lateral diffusion of CAMs depends on both adhesive interactions and clustering by scaffolding molecules. The lateral mobility of CAMs is strongly increased in embryos presenting alteration of septate junctions. The stronger effect of vari by comparison with nrx IV null mutation supports the hypothesis that this scaffolding molecule may cross-link different types of CAMs and play a crucial role in stabilizing the strands of septate junctions.

Thermal Diffusivity of High-Density Polyethylene Samples of Different Crystallinity Evaluated by Indirect Transmission Photoacoustics

NASA Astrophysics Data System (ADS)

Nesic, M.; Popovic, M.; Rabasovic, M.; Milicevic, D.; Suljovrujic, E.; Markushev, D.; Stojanovic, Z.

2018-02-01

In this work, thermal diffusivity of crystalline high-density polyethylene samples of various thickness, and prepared using different procedures, was evaluated by transmission gas-microphone frequency photoacoustics. The samples' composition analysis and their degree of crystallinity were determined from the wide-angle X-ray diffraction, which confirmed that high-density polyethylene samples, obtained by slow and fast cooling, were equivalent in composition but with different degrees of crystallinity. Structural analysis, performed by differential scanning calorimetry, demonstrated that all of the used samples had different levels of crystallinity, depending not only on the preparing procedure, but also on sample thickness. Therefore, in order to evaluate the samples' thermal diffusivity, it was necessary to modify standard photoacoustic fitting procedures (based on the normalization of photoacoustic amplitude and phase characteristics on two thickness levels) for the interpretation of photoacoustic measurements. The calculated values of thermal diffusivity were in the range of the expected literature values. Besides that, the obtained results indicate the unexpected correlation between the values of thermal diffusivity and thermal conductivity with the degree of crystallinity of the investigated geometrically thin samples. The results indicate the necessity of additional investigation of energy transport in macromolecular systems, as well as the possible employment of the photoacoustic techniques in order to clarify its mechanism.

Decay of the zincate concentration gradient at an alkaline zinc cathode after charging

NASA Technical Reports Server (NTRS)

Kautz, H. E.; May, C. E.

1979-01-01

The transport of the zincate ion to the alkaline zinc cathode was studied by observing the decay of the zincate concentration gradient at a horizontal zinc cathode after charging. This decay was found to approximate first order kinetics as expected from a proposed boundary layer model. The concentrations were calculated from polarization voltages. The decay half life was shown to be a linear function of the thickness of porous zinc deposit on the cathode indicating a very rapid transport of zincate through porous zinc metal. The rapid transport is attributed to an electrochemical mechanism. From the linear dependence of the half life on the thickness the boundary layer thickness was found to be about 0.010 cm when the cathode was at the bottom of the cell. No significant dependence of the boundary layer thickness on the viscosity of electrolyte was observed. The data also indicated a relatively sharp transition between the diffusion and convection transport regions. When the cathode was at the top of the cell, the boundary layer thickness was found to be roughly 0.080 cm. The diffusion of zincate ion through asbestos submerged in alkaline electrolyte was shown to be comparable with that predicted from the bulk diffusion coefficient of the zincate ion in alkali.

Permeation of protons, potassium ions, and small polar molecules through phospholipid bilayers as a function of membrane thickness.

PubMed Central

Paula, S; Volkov, A G; Van Hoek, A N; Haines, T H; Deamer, D W

1996-01-01

Two mechanisms have been proposed to account for solute permeation of lipid bilayers. Partitioning into the hydrophobic phase of the bilayer, followed by diffusion, is accepted by many for the permeation of water and other small neutral solutes, but transient pores have also been proposed to account for both water and ionic solute permeation. These two mechanisms make distinctively different predictions about the permeability coefficient as a function of bilayer thickness. Whereas the solubility-diffusion mechanism predicts only a modest variation related to bilayer thickness, the pore model predicts an exponential relationship. To test these models, we measured the permeability of phospholipid bilayers to protons, potassium ions, water, urea, and glycerol. Bilayers were prepared as liposomes, and thickness was varied systematically by using unsaturated lipids with chain lengths ranging from 14 to 24 carbon atoms. The permeability coefficient of water and neutral polar solutes displayed a modest dependence on bilayer thickness, with an approximately linear fivefold decrease as the carbon number varied from 14 to 24 atoms. In contrast, the permeability to protons and potassium ions decreased sharply by two orders of magnitude between 14 and 18 carbon atoms, and leveled off, when the chain length was further extended to 24 carbon atoms. The results for water and the neutral permeating solutes are best explained by the solubility-diffusion mechanism. The results for protons and potassium ions in shorter-chain lipids are consistent with the transient pore model, but better fit the theoretical line predicted by the solubility-diffusion model at longer chain lengths. PMID:8770210

Permeation of protons, potassium ions, and small polar molecules through phospholipid bilayers as a function of membrane thickness

NASA Technical Reports Server (NTRS)

Paula, S.; Volkov, A. G.; Van Hoek, A. N.; Haines, T. H.; Deamer, D. W.

1996-01-01

Two mechanisms have been proposed to account for solute permeation of lipid bilayers. Partitioning into the hydrophobic phase of the bilayer, followed by diffusion, is accepted by many for the permeation of water and other small neutral solutes, but transient pores have also been proposed to account for both water and ionic solute permeation. These two mechanisms make distinctively different predictions about the permeability coefficient as a function of bilayer thickness. Whereas the solubility-diffusion mechanism predicts only a modest variation related to bilayer thickness, the pore model predicts an exponential relationship. To test these models, we measured the permeability of phospholipid bilayers to protons, potassium ions, water, urea, and glycerol. Bilayers were prepared as liposomes, and thickness was varied systematically by using unsaturated lipids with chain lengths ranging from 14 to 24 carbon atoms. The permeability coefficient of water and neutral polar solutes displayed a modest dependence on bilayer thickness, with an approximately linear fivefold decrease as the carbon number varied from 14 to 24 atoms. In contrast, the permeability to protons and potassium ions decreased sharply by two orders of magnitude between 14 and 18 carbon atoms, and leveled off, when the chain length was further extended to 24 carbon atoms. The results for water and the neutral permeating solutes are best explained by the solubility-diffusion mechanism. The results for protons and potassium ions in shorter-chain lipids are consistent with the transient pore model, but better fit the theoretical line predicted by the solubility-diffusion model at longer chain lengths.

Prepartum and Postpartum Maternal Depressive Symptoms Are Related to Children's Brain Structure in Preschool.

PubMed

Lebel, Catherine; Walton, Matthew; Letourneau, Nicole; Giesbrecht, Gerald F; Kaplan, Bonnie J; Dewey, Deborah

2016-12-01

Perinatal maternal depression is a serious health concern with potential lasting negative consequences for children. Prenatal depression is associated with altered brain gray matter in children, though relations between postpartum depression and children's brains and the role of white matter are unclear. We studied 52 women who provided Edinburgh Postnatal Depression Scale (EPDS) scores during each trimester of pregnancy and at 3 months postpartum and their children who underwent magnetic resonance imaging at age 2.6 to 5.1 years. Associations between maternal depressive symptoms and magnetic resonance imaging measures of cortical thickness and white matter structure in the children were investigated. Women's second trimester EPDS scores negatively correlated with children's cortical thickness in right inferior frontal and middle temporal regions and with radial and mean diffusivity in white matter emanating from the inferior frontal area. Cortical thickness, but not diffusivity, correlations survived correction for postpartum EPDS. Postpartum EPDS scores negatively correlated with children's right superior frontal cortical thickness and with diffusivity in white matter originating from that region, even after correcting for prenatal EPDS. Higher maternal depressive symptoms prenatally and postpartum are associated with altered gray matter structure in children; the observed white matter correlations appear to be uniquely related to the postpartum period. The reduced thickness and diffusivity suggest premature brain development in children exposed to higher maternal perinatal depressive symptoms. These results highlight the importance of ensuring optimal women's mental health throughout the perinatal period, because maternal depressive symptoms appear to increase children's vulnerability to nonoptimal brain development. Copyright © 2016 Society of Biological Psychiatry. Published by Elsevier Inc. All rights reserved.

Proximal Junctional Failure After Long-Segment Instrumentation for Degenerative Lumbar Kyphosis With Ankylosing Spinal Disorder.

PubMed

Ikegami, Daisuke; Matsuoka, Takashi; Miyoshi, Yuji; Murata, Yoichi; Aoki, Yasuaki

2015-06-15

Case report. We report a case of proximal junctional failure at the ankylosed, but not the mobile, junction after segmental instrumented fusion for degenerative lumbar kyphosis with ankylosing spinal disorder. Proximal junctional failure (PJF) and proximal junctional kyphosis (PJK) are important complications that occur subsequent to long-segment instrumentation for correction of adult spinal deformity. Thus far, most studies have focused on the mobile junction as a site at which PJK/PJF can occur, and little is known about the relationship between PJK/PJF and ankylosing spinal disorders such as diffuse idiopathic skeletal hyperostosis. The patient was an 82-year-old female with degenerative lumbar kyphosis. She had abnormal confluent hyperostosis in the anterior longitudinal ligaments from Th5 to Th10. The patient was treated operatively with spinal instrumented fusion from Th10 to the sacrum. Four weeks subsequent to initial surgery, the patient developed progressive lower extremity paresis caused by the uppermost instrumented vertebrae fracture (Th10) and adjacent subluxation (Th9). Extension of fusion to Th5 with decompression at Th9-Th10 was performed. However, the patient showed no improvement in neurological function. PJF can occur at the ankylosing site above the uppermost instrumented vertebrae after long-segment instrumentation for adult spinal deformity. PJF in the ankylosed spine may cause severe fracture instability and cord deficit. The ankylosed spine should be integrated into the objective determination of materials contributing to the appropriate selection of fusion levels. 3.

Laser processing of solar cells with anti-reflective coating

DOEpatents

Harley, Gabriel; Smith, David D.; Dennis, Tim; Waldhauer, Ann; Kim, Taeseok; Cousins, Peter John

2016-02-16

Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

Photonic Devices Based on Surface and Composition-Engineered Infrared Colloidal Nanocrystals

DTIC Science & Technology

2012-01-27

NQD/P3HT solar cells , the need for submicron-phase-separated polymer-NQD blends is therefore expressed by the limiting exciton diffusion length ...P3HT:PbSe are very critical in designing the PM-HJ solar cells : The thickness of P3HT should approximate to the thickness of exciton diffuse length in... cells , luminescent solar concentrators, light emitting diodes, lasers, photonic crystals, CdSe, PbSe, Germanium Jian Xu Pennsylvania State University

Prospective in (Primate) Dental Analysis through Tooth 3D Topographical Quantification

PubMed Central

Guy, Franck; Gouvard, Florent; Boistel, Renaud; Euriat, Adelaïde; Lazzari, Vincent

2013-01-01

The occlusal morphology of the teeth is mostly determined by the enamel-dentine junction morphology; the enamel-dentine junction plays the role of a primer and conditions the formation of the occlusal enamel reliefs. However, the accretion of the enamel cap yields thickness variations that alter the morphology and the topography of the enamel–dentine junction (i.e., the differential deposition of enamel by the ameloblasts create an external surface that does not necessarily perfectly parallel the enamel–dentine junction). This self-reliant influence of the enamel on tooth morphology is poorly understood and still under-investigated. Studies considering the relationship between enamel and dentine morphologies are rare, and none of them tackled this relationship in a quantitative way. Major limitations arose from: (1) the difficulties to characterize the tooth morphology in its comprehensive tridimensional aspect and (2) practical issues in relating enamel and enamel–dentine junction quantitative traits. We present new aspects of form representation based exclusively on 3D analytical tools and procedures. Our method is applied to a set of 21 unworn upper second molars belonging to eight extant anthropoid genera. Using geometrical analysis of polygonal meshes representatives of the tooth form, we propose a 3D dataset that constitutes a detailed characterization of the enamel and of the enamel–dentine junction morphologies. Also, for the first time, to our knowledge, we intend to establish a quantitative method for comparing enamel and enamel–dentine junction surfaces descriptors (elevation, inclination, orientation, etc.). New indices that allow characterizing the occlusal morphology are proposed and discussed. In this note, we present technical aspects of our method with the example of anthropoid molars. First results show notable individual variations and taxonomic heterogeneities for the selected topographic parameters and for the pattern and strength of association between enamel–dentine junction and enamel, the enamel cap altering in different ways the “transcription” of the enamel–dentine junction morphology. PMID:23826088

Reduced Cu(InGa)Se 2 Thickness in Solar Cells Using a Superstrate Configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shafarman, William N.

This project by the Institute of Energy Conversion (IEC) and the Department of Electrical and Computer Engineering at the University of Delaware sought to develop the technology and underlying science to enable reduced cost of Cu(InGa)Se 2 manufacturing by reducing the thickness of the Cu(InGa)Se 2 absorber layer by half compared to typical production. The approach to achieve this was to use the superstrate cell configuration in which light is incident on the cell through the glass. This structure facilitates optical enhancement approaches needed to achieve high efficiency with Cu(InGa)Se 2 thicknesses less than 1 µm. The primary objective wasmore » to demonstrate a Cu(InGa)Se 2 cell with absorber thickness 0.5 - 0.7 µm and 17% efficiency, along with a quantitative loss analysis to define a pathway to 20% efficiency. Additional objectives were the development of stable TCO and buffer layers or contact layers to withstand the Cu(InGa)Se 2 deposition temperature and of advanced optical enhancement methods. The underlying fundamental science needed to effectively transition these outcomes to large scale was addressed by extensive materials and device characterization and by development of comprehensive optical models. Two different superstrate configurations have been investigated. A frontwall cell is illuminated through the glass to the primary front junction of the device. This configuration has been used for previous efforts on superstrate Cu(InGa)Se 2 but performance has been limited by interdiffusion or reaction with CdS or other buffer layers. In this project, several approaches to overcome these limitations were explored using CdS, ZnO and ZnSe buffer layers. In each case, mechanisms that limit device performance were identified using detailed characterization of the materials and junctions. Due to the junction formation difficulties, efforts were concentrated on a new backwall configuration in which light is incident through the substrate into the back of the absorber layer. The primary junction is then formed after Cu(InGa)Se 2 deposition. This allows the potential benefits of superstrate cells for optical enhancement while maintaining processing advantages of the substrate configuration and avoiding the harmful effects of high temperature deposition on p-n junction formation. Backwall devices have outperformed substrate cells at absorber thicknesses of 0.1-0.5 µm through enhanced JSC due to easy incorporation of a Ag reflector and, with light incident on the absorber, the elimination of parasitic absorption in the CdS buffer. An efficiency of 9.7% has been achieved for a backwall Cu(InGa)Se 2 device with absorber thickness ~0.4 μm. A critical achievement that enabled implementation of the backwall cell was the development of a transparent back contact using MoO 3 or WO 3. Processes for controlled deposition of each material by reactive rf sputtering from metal targets were developed. These contacts have wide bandgaps making them well-suited for application as contacts for backwall devices as well as potential use in bifacial cells and as the top cell of tandem CuInSe 2-based devices. Optical enhancement will be critical for further improvements. Wet chemical texturing of ZnO films has been developed for a simple, low cost light-trapping scheme for backwall superstrate devices to enhance long wavelength quantum efficiency. An aqueous oxalic acid etch was developed and found to strongly texture sputtered ZnO with high haze ≈ 0.9 observed across the whole spectrum. And finally, advanced optical models have been developed to assist the characterization and optimization of Cu(InGa)Se 2 cells with thin absorbers« less

Propagation of Epileptiform Activity Can Be Independent of Synaptic Transmission, Gap Junctions, or Diffusion and Is Consistent with Electrical Field Transmission

PubMed Central

Zhang, Mingming; Ladas, Thomas P.; Qiu, Chen; Shivacharan, Rajat S.; Gonzalez-Reyes, Luis E.

2014-01-01

The propagation of activity in neural tissue is generally associated with synaptic transmission, but epileptiform activity in the hippocampus can propagate with or without synaptic transmission at a speed of ∼0.1 m/s. This suggests an underlying common nonsynaptic mechanism for propagation. To study this mechanism, we developed a novel unfolded hippocampus preparation, from CD1 mice of either sex, which preserves the transverse and longitudinal connections and recorded activity with a penetrating microelectrode array. Experiments using synaptic transmission and gap junction blockers indicated that longitudinal propagation is independent of chemical or electrical synaptic transmission. Propagation speeds of 0.1 m/s are not compatible with ionic diffusion or pure axonal conduction. The only other means of communication between neurons is through electric fields. Computer simulations revealed that activity can indeed propagate from cell to cell solely through field effects. These results point to an unexpected propagation mechanism for neural activity in the hippocampus involving endogenous field effect transmission. PMID:24453330

Methods of improving the efficiency of photovoltaic cells. [including X ray analysis

NASA Technical Reports Server (NTRS)

Loferski, J. J.; Roessler, B.; Crisman, E. E.; Chen, L. Y.; Kaul, R.

1974-01-01

Work on aluminum-alloyed silicon grating cells is continued. Optimization of the geometry (grating line width and spacing) confirms the analysis of such cells. A 1 sq cm grating cell was fabricated and its i-V characteristic was measured under an AMO solar simulator. It is found that the efficiency of this cell would be about 7.9%, if it were covered by the usual antireflection coating. The surface of the cell is not covered by a diffused junction. The response is blue shifted; the current is somewhat higher than that produced by a commercial Si cell. However, the open circuit voltage is low, and attempts to optimize the open circuit voltage of the aluminum-alloy junctions are described. A preliminary X-ray topographic examination of GaAs specimens of the type commonly used to make solar cells is studied. The X-ray study shows that the wafers are filled with regions having strain gradients, possibly caused by precipitates. It is possible that a correlation exists between the presence of low mechanical perfection and minority carrier diffusion lengths of GaAs crystals.

Bifacial aspects of industrial n-Pasha solar cells

NASA Astrophysics Data System (ADS)

Van Aken, Bas B.; Tool, Kees; Kossen, Eric J.; Carr, Anna J.; Janssen, Gaby J. M.; Newman, Bonna K.; Romijn, Ingrid G.

2017-08-01

Bifacial photovoltaic (PV) modules make optimal use of diffuse and ground-reflected light. The gain in energy yield depends on both the local climatic conditions and the PV system layout. These determine the additional irradiance on the rear of the PV panels. The rear response of the (laminated) solar cell(s) determines how much additional energy this rear irradiance generates. Based on our experiments and simulations, the main parameters that determine the bifaciality factor of solar cells with a front side junction are the rear metal coverage, the base resistivity and the diffusion profile on the rear. These will be evaluated and discussed in this paper. Front-junction solar cells with low base resistivity have a lower short circuit current when illuminated from the rear due to enhanced recombination in the BSF. Stencil printed rear metallization yields a higher bifaciality factor compared to screen printed by reducing the metal coverage and consumption and maintaining the front side efficiency. For our optimized 239 cm2 bifacial cell we estimate that the output with 20% contributed by the rear side is equivalent to that of a 24.4% efficient monofacial cell.

Alterations in Cortical Thickness and White Matter Integrity in Mild Cognitive Impairment Measured by Whole Brain Cortical Thickness Mapping and Diffusion Tensor Imaging

PubMed Central

Wang, Liya; Goldstein, Felicia C.; Veledar, Emir; Levey, Allan I.; Lah, James J.; Meltzer, Carolyn C.; Holder, Chad A.; Mao, Hui

2010-01-01

Background and Purpose Mild cognitive impairment (MCI) is a risk factor for Alzheimer's disease (AD) and can be difficult to diagnose due to the subtlety of symptoms. This work attempted to examine gray and white matter changes with cortical thickness analysis and diffusion tensor imaging (DTI) in MCI patients and demographically-matched comparison subjects in order to test these measurements as possible imaging markers for diagnosis. Materials and Methods Subjects with amnestic MCI (n=10; age 72.2±7.1) and normal cognition (n=10; age 70.1±7.7) underwent DTI and T1 weighted MRI at 3T. Fractional anisotropy, apparent diffusion coefficient and cortical thickness were measured and compared between MCI and control groups. The diagnostic accuracy of two methods, either in combination or separately, was evaluated using binary logistic regression and nonparametric statistical analyses for sensitivity, specificity and accuracy. Results Decreased FA and increased ADC in white matter regions of frontal and temporal lobes and corpus callosum were observed in MCI patients. Cortical thickness was decreased in gray matter regions of the frontal, temporal, parietal lobes in MCI patients. Changes in white matter and cortical thickness appeared to be more pronounced in the left hemisphere than in the right hemisphere. Furthermore the combination of cortical thickness and DTI measurements in left temporal areas improved the accuracy of differentiating MCI patients from controls compared to either measure alone. Conclusion DTI and cortical thickness analyses may both serve imaging markers for differentiating MCI from normal aging. Combined use of two methods may improve the accuracy of MCI diagnosis. PMID:19279272

TOPICAL REVIEW: Physics of thermoelectric cooling

NASA Astrophysics Data System (ADS)

Gurevich, Yu G.; Logvinov, G. N.

2005-12-01

A new approach is suggested to explain the Peltier effect. It assumes that the Peltier effect is not an isothermal effect. The approach is based on the occurrences of induced thermal fluxes in a structure which consists of two conducting media, through which a dc electric current flows. These induced thermal diffusion fluxes arise to compensate for the change in the thermal flux caused by the electric current (the drift thermal flux) flowing through the junction, in accordance with the general Le Châtelier-Braun principle. The occurrence of these thermal diffusion fluxes leads to temperature heterogeneity in the structure and, as a result, to a cooling or heating of the junction. Within the framework of this concept, the thermoelectric cooling is analysed. It is shown that in the general case the Peltier effect always occurs together with another thermoelectric effect. This thermoelectric effect is predicted for the first time, and we have called it the barrierless thermoelectric effect. Both these effects essentially depend on the junction surface thermal resistance. The Peltier effect disappears in the limiting case of a very large surface thermal resistance, while the barrierless effect disappears in the limiting case of a very small surface thermal resistance. The dependence of thermoelectric cooling on the geometrical dimensions of the structure is noted, and the corresponding interpretation of this fact is discussed. It is shown that the thermoelectric cooling (heating) is a thermodynamically reversible process in the linear approximation of the electric current applied.

Two types of diffusions at the cathode/electrolyte interface in IT-SOFCs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li Zhipeng, E-mail: LI.Zhipeng@nims.go.jp; Mori, Toshiyuki; Auchterlonie, Graeme John

2011-09-15

Analytical transmission electron microscopy, in particular with the combination of energy dispersive X-ray spectroscopy (EDX) and electron energy-loss spectroscopy (EELS), has been performed to investigate the microstructure and microchemistry of the interfacial region between the cathode (La{sub 0.6}Sr{sub 0.4}Co{sub 0.8}Fe{sub 0.2}O{sub 3}, LSCF) and the electrolyte (Gd-doped ceria, GDC). Two types of diffusions, mutual diffusion between cathode and electrolyte as well as the diffusion along grain boundaries, have been clarified. These diffusions suggest that the chemical stability of LSCF and GDC are not as good as previously reported. The results are more noteworthy if we take into consideration the factmore » that such interdiffusions occur even during the sintering process of cell preparation. - Graphical Abstract: Two types of diffusions, the mutual diffusion and the diffusion along grain boundaries, occurred at the cathode/electrolyte interface of intermediate temperature solid state fuel cells, during cell preparation. The mutual diffusion is denoted by black arrows and the diffusion along grain boundaries assigned by pink arrows. Highlights: > All the cations in cathode (LSCF) and electrolyte (GDC) can mutually diffuse into each other. > Diffusing elements will segregate at grain boundaries or triple junctions around the cathode/electrolyte interface. > Two types of diffusions, the mutual diffusion and diffusion along grain boundaries, have been clarified thereafter.« less

Can Neural Activity Propagate by Endogenous Electrical Field?

PubMed Central

Qiu, Chen; Shivacharan, Rajat S.; Zhang, Mingming

2015-01-01

It is widely accepted that synaptic transmissions and gap junctions are the major governing mechanisms for signal traveling in the neural system. Yet, a group of neural waves, either physiological or pathological, share the same speed of ∼0.1 m/s without synaptic transmission or gap junctions, and this speed is not consistent with axonal conduction or ionic diffusion. The only explanation left is an electrical field effect. We tested the hypothesis that endogenous electric fields are sufficient to explain the propagation with in silico and in vitro experiments. Simulation results show that field effects alone can indeed mediate propagation across layers of neurons with speeds of 0.12 ± 0.09 m/s with pathological kinetics, and 0.11 ± 0.03 m/s with physiologic kinetics, both generating weak field amplitudes of ∼2–6 mV/mm. Further, the model predicted that propagation speed values are inversely proportional to the cell-to-cell distances, but do not significantly change with extracellular resistivity, membrane capacitance, or membrane resistance. In vitro recordings in mice hippocampi produced similar speeds (0.10 ± 0.03 m/s) and field amplitudes (2.5–5 mV/mm), and by applying a blocking field, the propagation speed was greatly reduced. Finally, osmolarity experiments confirmed the model's prediction that cell-to-cell distance inversely affects propagation speed. Together, these results show that despite their weak amplitude, electric fields can be solely responsible for spike propagation at ∼0.1 m/s. This phenomenon could be important to explain the slow propagation of epileptic activity and other normal propagations at similar speeds. SIGNIFICANCE STATEMENT Neural activity (waves or spikes) can propagate using well documented mechanisms such as synaptic transmission, gap junctions, or diffusion. However, the purpose of this paper is to provide an explanation for experimental data showing that neural signals can propagate by means other than synaptic transmission, gap junction, or diffusion. The results indicate that electric fields (ephaptic effects) are capable of mediating propagation of self-regenerating neural waves. This novel mechanism coupling cell-by-volume conduction could be involved in other types of propagating neural signals, such as slow-wave sleep, sharp hippocampal waves, theta waves, or seizures. PMID:26631463

Morphological evolution in a strained-heteroepitaxial solid droplet on a rigid substrate: Dynamical simulations

NASA Astrophysics Data System (ADS)

Ogurtani, Tarik Omer; Celik, Aytac; Oren, Ersin Emre

2010-09-01

A systematic study based on the self-consistent dynamical simulations is presented for the spontaneous evolution of an isolated thin solid droplet (bump) on a rigid substrate, which is driven by the surface drift diffusion induced by the capillary and mismatch stresses. In this study, we mainly focused on the development kinetics of the "Stranski-Krastanow" island type morphology, initiated by the nucleation route rather than the surface roughening scheme. The physicomathematical model, which bases on the irreversible thermodynamics treatment of surfaces and interfaces with singularities [T. O. Ogurtani, J. Chem. Phys. 124, 144706 (2006)], furnishes us to have autocontrol on the otherwise free-motion of the triple junction contour line between the substrate and the droplet without presuming any equilibrium dihedral contract (wetting) angles at the edges. During the development of the bell-shaped Stranski-Krastanow island through the mass accumulation at the central region of the droplet via surface drift diffusion with and/or without growth, the formation of an extremely thin wetting layer is observed. This wetting layer has a thickness of a fraction of a nanometer and covers not only the initial computation domain but also its further extension beyond the original boundaries. We also observed the formation of the multiple islands separated by shallow wetting layers above a certain threshold level of the mismatch strain and/or the size (i.e., volume) of the droplets. This threshold level depends on the initial physicochemical data and the aspect ratio (i.e., shape) of the original droplets. During the course of the simulations, we continuously tracked both the morphology (i.e., the peak height, the extension of the wetting layer beyond the domain boundaries, and the triple junction contact angle) and energetic (the global Helmholtz free energy changes associated with the total strain and surface energy variations) in the system. We observed that the morphology related quantities are reaching certain saturation limits or plateaus, when the growth mode is turned-off. On the other hand, the global Helmholtz free energy showed a steady decrease in time even though the total surface free energy of the droplet reaches a stationary value as expected a priori. Based on these observations and according to the accepted irreversible thermodynamic terminology as coined by celebrated Prigogine, we state that the Stranski-Krastanow type island morphologies are genuine stationary nonequilibrium states.

Evidence for a π junction in Nb/Ni 0.96V0.04/Nb trilayers revealed by superfluid density measurements

NASA Astrophysics Data System (ADS)

Hinton, M. J.; Steers, Stanley; Peters, Bryan; Yang, F. Y.; Lemberger, T. R.

2016-07-01

We report measurements of the superfluid density, λ-2(T ) , in ferromagnet-on-superconductor (F/S) bilayers and S/F/S' trilayers comprising Nb with Ni, Py, CoFe, and NiV ferromagnets. Bilayers provide information about F/S interface transparency and the T dependence of λ-2 that inform interpretation of trilayer data. The Houzet-Meyer theory accounts well for the measured dependence of λ-2(0 ) and Tc of F/S bilayers on thickness of F layer, dF, except that λ-2(0 ) is slightly under expectations for CoFe/Nb bilayers. For Nb/F/Nb' trilayers, we are able to extract Tc and and λ-2 for both Nb layers when F is thick enough to weaken interlayer coupling. The lower "Tc" is actually a crossover identified by onset of superfluid in the lower-Tc Nb layer. For Nb/NiV/Nb' trilayers, λ-2(0 ) versus dF for both Nb layers has a minimum followed by a recovery, suggestive of a π junction.

Thin limit of the 6D Cascading DGP model

NASA Astrophysics Data System (ADS)

Sbisà, Fulvio

2018-05-01

A thin limit description of the 6D Cascading DGP model is derived, starting from a configuration where both the codimension-1 and the codimension-2 branes are thick. Postulating that the thicknesses of the two branes obey a hierarchic relation, the thin limit is executed in two steps. First the thin limit of the codimension-1 brane is executed, obtaining a system where a "ribbon" codimension-2 brane is embedded inside a thin codimension-1 brane with induced gravity, and then the thin limit of the ribbon brane is considered. By proposing a geometric ansatz on the limit configuration, the junction conditions which are to hold at the thin codimension-2 brane are derived. The latters are fully non-perturbative and covariant and, together with the Israel junction conditions at the codimension-1 brane and the Einstein equations in the bulk, constitute the looked-for thin limit formulation of the 6D Cascading DGP model. It is commented on how wide is the class of thin source configurations which can be placed on the thin codimension-2 brane.

Sharp Curvature of Frontal Lobe White Matter Pathways in Children with Autism Spectrum Disorder: Tract-Based Morphometry Analysis

PubMed Central

Jeong, Jeong-Won; Kumar, Ajay; Sundaram, Senthil K.; Chugani, Harry T.; Chugani, Diane C.

2013-01-01

Background and Purpose As we had previously observed geometrical changes of frontal lobe association pathways in children with autism spectrum disorder (ASD), in the present study we analyzed the curvature of these white matter pathways using an objective tract based morphometry (TBM) analysis. Materials and Methods Diffusion tensor imaging (DTI) was performed in 32 children with ASD and 14 children with typical development. Curvature, fractional anisotropy (FA), axial diffusivity (AD), and radial diffusivity (RD) of bilateral arcuate fasciculus (AF), uncinate fasciculus (UF), and genu of corpus callosum (gCC) were investigated using the TBM group analysis assessed by False Discovery Rate p-value (PFDR) for multiple comparisons. Results Significantly higher curvatures were found in children with ASD especially at the parieto-temporal junction for AF (left: PFDR < 0.001; right: PFDR < 0.01), at the fronto-temporal junction for UF (left: PFDR < 0.005; right: PFDR < 0.03), and at the midline of the gCC (PFDR < 0.0001). RD was significantly higher in children with ASD at the same bending regions of AF (left: PFDR < 0.03, right: PFDR < 0.02), UF (left: PFDR < 0.04), and gCC (PFDR < 0.01). Conclusion Higher curvature and curvature dependent RD changes in children with ASD may be the result of higher density of thinner axons in these frontal lobe tracts. PMID:21757519

A technique to measure the thermal diffusivity of high Tc superconductors

NASA Technical Reports Server (NTRS)

Powers, Charles E.

1991-01-01

High T(sub c) superconducting electrical current leads and ground straps will be used in cryogenic coolers in future NASA Goddard Space Flight Center missions. These superconducting samples are long, thin leads with a typical diameter of two millimeters. A longitudinal method is developed to measure the thermal diffusivity of candidate materials for this application. This technique uses a peltier junction to supply an oscillatory heat wave into one end of a sample and will use low mass thermocouples to follow the heat wave along the sample. The thermal diffusivity is calculated using both the exponential decay of the heat wave and the phase shift to the wave. Measurements are performed in a cryostat between 10 K and room temperature.

Additive Effects of Rebamipide Plus Proton Pump Inhibitors on the Expression of Tight Junction Proteins in a Rat Model of Gastro-Esophageal Reflux Disease

PubMed Central

Gweon, Tae-Geun; Park, Jong-Hyung; Kim, Byung-Wook; Choi, Yang Kyu; Kim, Joon Sung; Park, Sung Min; Kim, Chang Whan; Kim, Hyung-Gil; Chung, Jun-Won; Incheon

2018-01-01

Background/Aims The aim of this study was to investigate the effects of rebamipide on tight junction proteins in the esophageal mucosa in a rat model of gastroesophageal reflux disease (GERD). Methods GERD was created in rats by tying the proximal stomach. The rats were divided into a control group, a proton pump inhibitor (PPI) group, and a PPI plus rebamipide (PPI+R) group. Pantoprazole (5 mg/kg) was administered intraperitoneally to the PPI and PPI+R groups. An additional dose of rebamipide (100 mg/kg) was administered orally to the PPI+R group. Mucosal erosions, epithelial thickness, and leukocyte infiltration into the esophageal mucosa were measured in isolated esophagi 14 days after the procedure. A Western blot analysis was conducted to measure the expression of claudin-1, -3, and -4. Results The mean surface area of mucosal erosions, epithelial thickness, and leukocyte infiltration were lower in the PPI group and the PPI+R group than in the control group. Western blot analysis revealed that the expression of claudin-3 and -4 was significantly higher in the PPI+R group than in the control group. Conclusions Rebamipide may exert an additive effect in combination with PPI to modify the tight junction proteins of the esophageal mucosa in a rat model of GERD. This treatment might be associated with the relief of GERD symptoms. PMID:29069891

Correlation of doping, structure, and carrier dynamics in a single GaN nanorod

NASA Astrophysics Data System (ADS)

Zhou, Xiang; Lu, Ming-Yen; Lu, Yu-Jung; Gwo, Shangjr; Gradečak, Silvija

2013-06-01

We report the nanoscale optical investigation of a single GaN p-n junction nanorod by cathodoluminescence (CL) in a scanning transmission electron microscope. CL emission characteristic of dopant-related transitions was correlated to doping and structural defect in the nanorod, and used to determine p-n junction position and minority carrier diffusion lengths of 650 nm and 165 nm for electrons and holes, respectively. Temperature-dependent CL study reveals an activation energy of 19 meV for non-radiative recombination in Mg-doped GaN nanorods. These results directly correlate doping, structure, carrier dynamics, and optical properties of GaN nanostructure, and provide insights for device design and fabrication.

Influence of ground level SO2 on the diffuse to direct irradiance ratio in the middle ultraviolet

NASA Technical Reports Server (NTRS)

Klenk, K. F.; Green, A. E. S.

1977-01-01

The dependence of the ratio of the diffuse to direct irradiances at the ground were examined for a wavelength of 315.1 nm. A passive remote sensing method based on ratio measurements for obtaining the optical thickness of SO2 in the vertical column was proposed. If, in addition to the ratio measurements, the SO2 density at the ground is determining using an appropriate point-sampling technique then some inference on the vertical extent of SO2 can be drawn. An analytic representation is presented of the ratio for a wide range of SO2 and aerosol optical thicknesses and solar zenith angles which can be inverted algebraically to give the SO2 optical thickness in terms of the measured ratio, aerosol optical thickness and solar zenith angle.

Laser process and corresponding structures for fabrication of solar cells with shunt prevention dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harley, Gabriel; Smith, David D.; Dennis, Tim

Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

Process and structures for fabrication of solar cells with laser ablation steps to form contact holes

DOEpatents

Harley, Gabriel; Smith, David D; Dennis, Tim; Waldhauer, Ann; Kim, Taeseok; Cousins, Peter John

2013-11-19

Contact holes of solar cells are formed by laser ablation to accomodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thickness.

Strategies for increasing the efficiency of heterojunction organic solar cells: material selection and device architecture.

PubMed

Heremans, Paul; Cheyns, David; Rand, Barry P

2009-11-17

Thin-film blends or bilayers of donor- and acceptor-type organic semiconductors form the core of heterojunction organic photovoltaic cells. Researchers measure the quality of photovoltaic cells based on their power conversion efficiency, the ratio of the electrical power that can be generated versus the power of incident solar radiation. The efficiency of organic solar cells has increased steadily in the last decade, currently reaching up to 6%. Understanding and combating the various loss mechanisms that occur in processes from optical excitation to charge collection should lead to efficiencies on the order of 10% in the near future. In organic heterojunction solar cells, the generation of photocurrent is a cascade of four steps: generation of excitons (electrically neutral bound electron-hole pairs) by photon absorption, diffusion of excitons to the heterojunction, dissociation of the excitons into free charge carriers, and transport of these carriers to the contacts. In this Account, we review our recent contributions to the understanding of the mechanisms that govern these steps. Starting from archetype donor-acceptor systems of planar small-molecule heterojunctions and solution-processed bulk heterojunctions, we outline our search for alternative materials and device architectures. We show that non-planar phthalocynanines have appealing absorption characteristics but also have reduced charge carrier transport. As a result, the donor layer needs to be ultrathin, and all layers of the device have to be tuned to account for optical interference effects. Using these optimization techniques, we illustrate cells with 3.1% efficiency for the non-planar chloroboron subphthalocyanine donor. Molecules offering a better compromise between absorption and carrier mobility should allow for further improvements. We also propose a method for increasing the exciton diffusion length by converting singlet excitons into long-lived triplets. By doping a polymer with a phosphorescent molecule, we demonstrate an increase in the exciton diffusion length of a polymer from 4 to 9 nm. If researchers can identify suitable phosphorescent dopants, this method could be employed with other materials. The carrier transport from the junction to the contacts is markedly different for a bulk heterojunction cell than for planar junction cells. Unlike for bulk heterojunction cells, the open-circuit voltage of planar-junction cells is independent of the contact work functions, as a consequence of the balance of drift and diffusion currents in these systems. This understanding helps to guide the development of new materials (particularly donor materials) that can further boost the efficiency of single-junction cells to 10%. With multijunction architectures, we expect that efficiencies of 12-16% could be attained, at which point organic photovoltaic cells could become an important renewable energy source.

Au/Ti resistors used for Nb/Pb-alloy Josephson junctions. II. Thermal stability

NASA Astrophysics Data System (ADS)

Murakami, Masanori; Kim, K. K.

1984-10-01

In the preceding paper bilayered Au/Ti resistors were found to have excellent electrical stability during storage at room temperature after preannealing at an elevated temperature, which is essential to design logic and memory circuits of Nb/Pb-alloy Josephson junction devices. The resistors could contact directly with the Pb-alloy control lines in which Pb and In atoms which are known to intermix easily with Au atoms are contained. Since Pb and In atoms in the control lines are separated from Au atoms of the resistors by thin Ti layers, thermal stability at the contacts is a major concern for use of the Au/Ti resistor material in the Josephson devices. In the present study, surface morphology change and diffusion mechanism at the resistor/control-line contacts were studied using x-ray diffraction and scanning electron microscopy for square-shaped Au/Ti resistors covered by Pb-In layers. The samples were isothermally annealed at temperatures ranging from 353 to 423 K. The diffusion did not occur immediately after annealing at these temperatures. After the incubation period, the interdiffusion was observed to initiate at the edges of the resistors facing to the center of the cathode. Significant amounts of the In atoms in the Pb-In layers were observed to diffuse into the Au layers of the resistors, forming AuIn2 compounds under the Ti layers. By measuring growth rates of the AuIn2 layers, the diffusion coefficients and the activation energy for the layer growth were determined. Also, by analyzing changes in the In concentration in the Pb-In layers during annealing, interdiffusion coefficients of In atoms in the Pb-In layers were determined using a computer simulation technique. The activation energy was about 1.1 eV. Since these diffusion coefficients were found to be very close to those determined previously in bulk materials, the diffusion kinetics is believed to be controlled by the lattice diffusion. Based on the present results, several methods to reduce the interdiffusion between Pb-alloy and Au/Ti resistors were proposed.