DOE Office of Scientific and Technical Information (OSTI.GOV)

McNeill, Jason Douglas

Electronic states of a thin layer of material on a surface possess unique physical and chemical properties. Some of these properties arise from the reduced dimensionality of the thin layer with respect to the bulk or the properties of the electric field where two materials of differing dielectric constants meet at an interface. Other properties are related to the nature of the surface chemical bond. Here, the properties of excess electrons in thin layers of Xenon, Krypton, and alkali metals are investigated, and the bound state energies and effective masses of the excess electrons are determined using two-photon photoemission. Formore » Xenon, the dependence of bound state energy, effective mass, and lifetime on layer thickness from one to nine layers is examined. Not all quantities were measured at each coverage. The two photon photoemission spectra of thin layers of Xenon on a Ag(111) substrate exhibit a number of sharp, well-defined peaks. The binding energy of the excess electronic states of Xenon layers exhibited a pronounced dependence on coverage. A discrete energy shift was observed for each additional atomic layer. At low coverage, a series of states resembling a Rydberg series is observed. This series is similar to the image state series observed on clean metal surfaces. Deviations from image state energies can be described in terms of the dielectric constant of the overlayer material and its effect on the image potential. For thicker layers of Xe (beyond the first few atomic layers), the coverage dependence of the features begins to resemble that of quantum well states. Quantum well states are related to bulk band states. However, the finite thickness of the layer restricts the perpendicular wavevector to a discrete set of values. Therefore, the spectrum of quantum well states contains a series of peaks which correspond to the various allowed values of the perpendicular wavevector. Analysis of the quantum well spectrum yields electronic band structure information. In this case, the quantum well states examined are derived from the Xenon conduction band. Measurements of the energies as a function of coverage yield the dispersion along the axis perpendicular to the surface while angle-resolved two-photon photoemission measurements yield information about dispersion along the surface parallel. The relative importance of the image potential and the overlayer band structure also depends on the quantum number and energy of the state. Some members of the image series may have an energy which is in an energy gap of the layer material, therefore such states may tend to remain physically outside the layer and retain much of their image character even at higher coverages. This is the case for the n = 1 image state of the Xe/Ag(111) system. The energies of image states which are excluded from the layer have a complex dependence on the thickness of the layer and its dielectric constant. The population decay kinetics of excited electronic states of the layer were also determined. Lifetimes are reported for the first three excited states for 1-6 atomic layers of Xe on Ag(111). As the image states evolve into quantum well states with increasing coverage, the lifetimes undergo an oscillation which marks a change in the spatial extent of the state. For example, the n = 2 quantum well state decreases substantially at 3-5 layers as the electron probability density in the layer increases. The lifetime data are modeled by extending the two-band nearly-free-electron approximation to account for the insulating Xe layer.« less

Contrasting Drainage and Stratification in Horizontal Vs Vertical Micellar Foam Films

NASA Astrophysics Data System (ADS)

Wojcik, Ewelina; Yilixiati, Subinuer; Zhang, Yiran; Sharma, Vivek

Understanding and controlling the drainage kinetics of thin films is an important problem that underlies the stability, lifetime and rheology of foams and emulsions. In foam films formed with micellar solutions, the surfactant is present as interfacially-adsorbed layer at both liquid-air interfaces, as well as in bulk as self-assembled supramolecular structures called micelles. Ultrathin micellar films exhibit stratification due to confinement-induced structuring and layering of micelles. Stratification in micellar foam films is manifested as stepwise thinning over time, and it leads to the coexistence of flat domains with discretely different thicknesses. In this contribution we use Interferometry Digital Imaging Optical Microscopy (IDIOM) protocols to visualize and analyze thickness transitions and variations associated with stratification in micellar foam films made with sodium dodecyl sulfate (SDS). We contrast the drainage and stratification dynamics in horizontal and vertical foam films, and investigate the role played by gravitational, viscous, interfacial and surface forces.

Including fluid shear viscosity in a structural acoustic finite element model using a scalar fluid representation

PubMed Central

Cheng, Lei; Li, Yizeng; Grosh, Karl

2013-01-01

An approximate boundary condition is developed in this paper to model fluid shear viscosity at boundaries of coupled fluid-structure system. The effect of shear viscosity is approximated by a correction term to the inviscid boundary condition, written in terms of second order in-plane derivatives of pressure. Both thin and thick viscous boundary layer approximations are formulated; the latter subsumes the former. These approximations are used to develop a variational formation, upon which a viscous finite element method (FEM) model is based, requiring only minor modifications to the boundary integral contributions of an existing inviscid FEM model. Since this FEM formulation has only one degree of freedom for pressure, it holds a great computational advantage over the conventional viscous FEM formulation which requires discretization of the full set of linearized Navier-Stokes equations. The results from thick viscous boundary layer approximation are found to be in good agreement with the prediction from a Navier-Stokes model. When applicable, thin viscous boundary layer approximation also gives accurate results with computational simplicity compared to the thick boundary layer formulation. Direct comparison of simulation results using the boundary layer approximations and a full, linearized Navier-Stokes model are made and used to evaluate the accuracy of the approximate technique. Guidelines are given for the parameter ranges over which the accurate application of the thick and thin boundary approximations can be used for a fluid-structure interaction problem. PMID:23729844

Including fluid shear viscosity in a structural acoustic finite element model using a scalar fluid representation.

PubMed

Cheng, Lei; Li, Yizeng; Grosh, Karl

2013-08-15

An approximate boundary condition is developed in this paper to model fluid shear viscosity at boundaries of coupled fluid-structure system. The effect of shear viscosity is approximated by a correction term to the inviscid boundary condition, written in terms of second order in-plane derivatives of pressure. Both thin and thick viscous boundary layer approximations are formulated; the latter subsumes the former. These approximations are used to develop a variational formation, upon which a viscous finite element method (FEM) model is based, requiring only minor modifications to the boundary integral contributions of an existing inviscid FEM model. Since this FEM formulation has only one degree of freedom for pressure, it holds a great computational advantage over the conventional viscous FEM formulation which requires discretization of the full set of linearized Navier-Stokes equations. The results from thick viscous boundary layer approximation are found to be in good agreement with the prediction from a Navier-Stokes model. When applicable, thin viscous boundary layer approximation also gives accurate results with computational simplicity compared to the thick boundary layer formulation. Direct comparison of simulation results using the boundary layer approximations and a full, linearized Navier-Stokes model are made and used to evaluate the accuracy of the approximate technique. Guidelines are given for the parameter ranges over which the accurate application of the thick and thin boundary approximations can be used for a fluid-structure interaction problem.

Nondestructive Testing and Target Identification

DTIC Science & Technology

2016-12-21

Dirichlet obstacle coated by a thin layer of non-absorbing media, IMA J. Appl. Math , 80, 1063-1098, (2015). Abstract: We consider the transmission...F. Cakoni, I. De Teresa, H. Haddar and P. Monk, Nondestructive testing of the delami- nated interface between two materials, SIAM J. Appl. Math ., 76...then they form a discrete set. 22. F. Cakoni, D. Colton, S. Meng and P. Monk, Steklov eigenvalues in inverse scattering, SIAM J. Appl. Math . 76, 1737

A discrete geometric approach for simulating the dynamics of thin viscous threads

DOE Office of Scientific and Technical Information (OSTI.GOV)

Audoly, B., E-mail: audoly@lmm.jussieu.fr; Clauvelin, N.; Brun, P.-T.

We present a numerical model for the dynamics of thin viscous threads based on a discrete, Lagrangian formulation of the smooth equations. The model makes use of a condensed set of coordinates, called the centerline/spin representation: the kinematic constraints linking the centerline's tangent to the orientation of the material frame is used to eliminate two out of three degrees of freedom associated with rotations. Based on a description of twist inspired from discrete differential geometry and from variational principles, we build a full-fledged discrete viscous thread model, which includes in particular a discrete representation of the internal viscous stress. Consistencymore » of the discrete model with the classical, smooth equations for thin threads is established formally. Our numerical method is validated against reference solutions for steady coiling. The method makes it possible to simulate the unsteady behavior of thin viscous threads in a robust and efficient way, including the combined effects of inertia, stretching, bending, twisting, large rotations and surface tension.« less

Continuous modeling of a grain boundary in MgO and its disclination induced grain-boundary migration mechanism

NASA Astrophysics Data System (ADS)

Cordier, P.; Sun, X.; Taupin, V.; Fressengeas, C.

2016-12-01

Grain boundaries (GBs) are thin material layers where the lattice rotates from one orientation to the next one within a few nanometers. Because they treat these layers as infinitely thin interfaces, large-scale polycrystalline representations fail to describe their structure. Conversely, atomistic representations provide a detailed description of the GBs, but their character remains discrete and not prone to coarse-graining procedures. Continuum descriptions based on kinematic and crystal defect fields defined at interatomic scale are appealing because they can provide smooth and thorough descriptions of GBs, recovering in some sense the atomistic description and potentially serving as a basis for coarse-grained polycrystalline representations. In this work, a crossover between atomistic description and continuous representation of a MgO tilt boundary in polycrystals is set-up to model the periodic arrays of structural units by using dislocation and disclination dipole arrays along GBs. The strain, rotation, curvature, disclination and dislocation density fields are determined in the boundary area by using the discrete atomic positions generated by molecular dynamics simulations. Then, this continuous disclination/dislocation model is used as part of the initial conditions in elasto-plastic continuum mechanics simulations to investigate the shear-coupled boundary migration of tilt boundaries. The present study leads to better understanding of the structure and mechanical architecture of grain boundaries.

In situ conductance measurements of copper phthalocyanine thin film growth on sapphire [0001].

PubMed

Murdey, Richard; Sato, Naoki

2011-06-21

The current flowing through a thin film of copper phthalocyanine vacuum deposited on a single crystal sapphire [0001] surface was measured during film growth from 0 to 93 nm. The results, expressed as conductance vs. nominal film thickness, indicate three distinct film growth regions. Conductive material forms below about 5 nm and again above 35 nm, but in the intermediate thicknesses the film conductance was observed to decrease with increasing film thickness. With the aid of ac-AFM topology images taken ex situ, the conductance results are explained based on the Stranski-Krastanov (2D + 3D) film growth mechanism, in which the formation of a thin wetting layer is followed by the growth of discrete islands that eventually coalesce into an interpenetrating, conductive network. © 2011 American Institute of Physics

Reversibility of temperature driven discrete layer-by-layer formation of dioctyl-benzothieno-benzothiophene films.

PubMed

Dohr, M; Ehmann, H M A; Jones, A O F; Salzmann, I; Shen, Q; Teichert, C; Ruzié, C; Schweicher, G; Geerts, Y H; Resel, R; Sferrazza, M; Werzer, O

2017-03-22

Film forming properties of semiconducting organic molecules comprising alkyl-chains combined with an aromatic unit have a decisive impact on possible applications in organic electronics. In particular, knowledge on the film formation process in terms of wetting or dewetting, and the precise control of these processes, is of high importance. In the present work, the subtle effect of temperature on the morphology and structure of dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) films deposited on silica surfaces by spin coating is investigated in situ via X-ray diffraction techniques and atomic force microscopy. Depending on temperature, bulk C8-BTBT exhibits a crystalline, a smectic A and an isotropic phase. Heating of thin C8-BTBT layers at temperatures below the smectic phase transition temperature leads to a strong dewetting of the films. Upon approaching the smectic phase transition, the molecules start to rewet the surface in the form of discrete monolayers with a defined number of monolayers being present at a given temperature. The wetting process and layer formation is well defined and thermally stable at a given temperature. On cooling the reverse effect is observed and dewetting occurs. This demonstrates the full reversibility of the film formation behavior and reveals that the layering process is defined by an equilibrium thermodynamic state, rather than by kinetic effects.

A new flux-conserving numerical scheme for the steady, incompressible Navier-Stokes equations

NASA Technical Reports Server (NTRS)

Scott, James R.

1994-01-01

This paper is concerned with the continued development of a new numerical method, the space-time solution element (STS) method, for solving conservation laws. The present work focuses on the two-dimensional, steady, incompressible Navier-Stokes equations. Using first an integral approach, and then a differential approach, the discrete flux conservation equations presented in a recent paper are rederived. Here a simpler method for determining the flux expressions at cell interfaces is given; a systematic and rigorous derivation of the conditions used to simulate the differential form of the governing conservation law(s) is provided; necessary and sufficient conditions for a discrete approximation to satisfy a conservation law in E2 are derived; and an estimate of the local truncation error is given. A specific scheme is then constructed for the solution of the thin airfoil boundary layer problem. Numerical results are presented which demonstrate the ability of the scheme to accurately resolve the developing boundary layer and wake regions using grids which are much coarser than those employed by other numerical methods. It is shown that ten cells in the cross-stream direction are sufficient to accurately resolve the developing airfoil boundary layer.

Application of the Refined Zigzag Theory to the Modeling of Delaminations in Laminated Composites

NASA Technical Reports Server (NTRS)

Groh, Rainer M. J.; Weaver, Paul M.; Tessler, Alexander

2015-01-01

The Refined Zigzag Theory is applied to the modeling of delaminations in laminated composites. The commonly used cohesive zone approach is adapted for use within a continuum mechanics model, and then used to predict the onset and propagation of delamination in five cross-ply composite beams. The resin-rich area between individual composite plies is modeled explicitly using thin, discrete layers with isotropic material properties. A damage model is applied to these resin-rich layers to enable tracking of delamination propagation. The displacement jump across the damaged interfacial resin layer is captured using the zigzag function of the Refined Zigzag Theory. The overall model predicts the initiation of delamination to within 8% compared to experimental results and the load drop after propagation is represented accurately.

Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layer

NASA Astrophysics Data System (ADS)

Chattopadhyay, P.

1994-10-01

The role of discrete localized states on the current-voltage characteristics of metal-semiconductor contact is examined. It is seen that, because of these localized states, the logarithmic current vs voltage characteristics become nonlinear. Such nonlinearity is found sensitive to the temperature, and the energy and density of the localized states. The predicted temperature dependence of barrier height and the current-voltage characteristics are in agreement with the experimental results of Aboelfotoh [ Phys. Rev. B39, 5070 (1989)].

Rapid bio-patterning method based on the fabrication of PEG microstructures and layer-by-layer polymeric thin film

NASA Astrophysics Data System (ADS)

Shim, Hyun-Woo; Lee, Ji-Hye; Choi, Chang-Hyoung; Song, Hwan-Moon; Kim, Bo-Yeol; Kim, Dong-Pyo; Lee, Chang-Soo

2007-12-01

The patterning of biomolecules in well-defined microstructures is critical issue for the development of biosensors and biochips. However, the fabrication of microstructures with well-ordered and spatially discrete forms to provide the patterned surface for the immobilization of biomolecules is difficult because of the lack of distinct physical and chemical barriers separating patterns. This study present rapid biomolecule patterning using micromolding in capillaries (MIMIC), soft-lithographic fabrication of PEG microstructures for prevention of nonspecific binding as a biological barrier, and self assembled polymeric thin film for efficient immobilization of proteins or cells. For the proof of concept, protein (FITC-BSA), bacteria (E.coli BL21-pET23b-GFP) were used for biomolecules patterning on polyelectrolyte coated surface within PEG microstructures. The novel approach of MIMIC combined with LbL coating provides a general platform for patterning a broad range of materials because it can be easily applied to various substrates such as glass, silicon, silicon dioxide, and polymers.

A Critical Study of Agglomerated Multigrid Methods for Diffusion

NASA Technical Reports Server (NTRS)

Nishikawa, Hiroaki; Diskin, Boris; Thomas, James L.

2011-01-01

Agglomerated multigrid techniques used in unstructured-grid methods are studied critically for a model problem representative of laminar diffusion in the incompressible limit. The studied target-grid discretizations and discretizations used on agglomerated grids are typical of current node-centered formulations. Agglomerated multigrid convergence rates are presented using a range of two- and three-dimensional randomly perturbed unstructured grids for simple geometries with isotropic and stretched grids. Two agglomeration techniques are used within an overall topology-preserving agglomeration framework. The results show that multigrid with an inconsistent coarse-grid scheme using only the edge terms (also referred to in the literature as a thin-layer formulation) provides considerable speedup over single-grid methods but its convergence deteriorates on finer grids. Multigrid with a Galerkin coarse-grid discretization using piecewise-constant prolongation and a heuristic correction factor is slower and also grid-dependent. In contrast, grid-independent convergence rates are demonstrated for multigrid with consistent coarse-grid discretizations. Convergence rates of multigrid cycles are verified with quantitative analysis methods in which parts of the two-grid cycle are replaced by their idealized counterparts.

A Critical Study of Agglomerated Multigrid Methods for Diffusion

NASA Technical Reports Server (NTRS)

Thomas, James L.; Nishikawa, Hiroaki; Diskin, Boris

2009-01-01

Agglomerated multigrid techniques used in unstructured-grid methods are studied critically for a model problem representative of laminar diffusion in the incompressible limit. The studied target-grid discretizations and discretizations used on agglomerated grids are typical of current node-centered formulations. Agglomerated multigrid convergence rates are presented using a range of two- and three-dimensional randomly perturbed unstructured grids for simple geometries with isotropic and highly stretched grids. Two agglomeration techniques are used within an overall topology-preserving agglomeration framework. The results show that multigrid with an inconsistent coarse-grid scheme using only the edge terms (also referred to in the literature as a thin-layer formulation) provides considerable speedup over single-grid methods but its convergence deteriorates on finer grids. Multigrid with a Galerkin coarse-grid discretization using piecewise-constant prolongation and a heuristic correction factor is slower and also grid-dependent. In contrast, grid-independent convergence rates are demonstrated for multigrid with consistent coarse-grid discretizations. Actual cycle results are verified using quantitative analysis methods in which parts of the cycle are replaced by their idealized counterparts.

One-dimensional analysis of plane and radial thin film flows including solid-body rotation

NASA Technical Reports Server (NTRS)

Thomas, S.; Hankey, W.; Faghri, A.; Swanson, T.

1989-01-01

The flow of a thin liquid film with a free surface along a horizontal plate which emanates from a pressurized vessel is examined by integrating the equations of motion across the thin liquid layer and discretizing the integrated equations using finite difference techniques. The effects of 0-g and solid-body rotation will be discussed. The two cases of interest are plane flow and radial flow. In plane flow, the liquid is considered to be flowing along a channel with no change in the width of the channel, whereas in radial flow the liquid spreads out radially over a disk, so that the area changes along the radius. It is desired to determine the height of the liquid film at any location along the plate of disk, so that the heat transfer from the plate or disk can be found. The possibility that the flow could encounter a hydraulic jump is accounted for.

Process for producing Ti-Cr-Al-O thin film resistors

DOEpatents

Jankowski, Alan F.; Schmid, Anthony P.

2001-01-01

Thin films of Ti-Cr-Al-O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti-Cr-Al-O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti-Cr-Al-O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti-Cr-Al-O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Flat panel display using Ti-Cr-Al-O thin film

DOEpatents

Jankowski, Alan F.; Schmid, Anthony P.

2002-01-01

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

TI--CR--AL--O thin film resistors

DOEpatents

Jankowski, Alan F.; Schmid, Anthony P.

2000-01-01

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Automated retinal layer segmentation and characterization

NASA Astrophysics Data System (ADS)

Luisi, Jonathan; Briley, David; Boretsky, Adam; Motamedi, Massoud

2014-05-01

Spectral Domain Optical Coherence Tomography (SD-OCT) is a valuable diagnostic tool in both clinical and research settings. The depth-resolved intensity profiles generated by light backscattered from discrete layers of the retina provide a non-invasive method of investigating progressive diseases and injury within the eye. This study demonstrates the application of steerable convolution filters capable of automatically separating gradient orientations to identify edges and delineate tissue boundaries. The edge maps were recombined to measure thickness of individual retinal layers. This technique was successfully applied to longitudinally monitor changes in retinal morphology in a mouse model of laser-induced choroidal neovascularization (CNV) and human data from age-related macular degeneration patients. The steerable filters allow for direct segmentation of noisy images, while novel recombination of weaker segmentations allow for denoising post-segmentation. The segmentation before denoising strategy allows the rapid detection of thin retinal layers even under suboptimal imaging conditions.

Controlling the near-field excitation of nano-antennas with phase-change materials.

PubMed

Kao, Tsung Sheng; Chen, Yi Guo; Hong, Ming Hui

2013-01-01

By utilizing the strongly induced plasmon coupling between discrete nano-antennas and quantitatively controlling the crystalline proportions of an underlying Ge2Sb2Te5 (GST) phase-change thin layer, we show that nanoscale light localizations in the immediate proximity of plasmonic nano-antennas can be spatially positioned. Isolated energy hot-spots at a subwavelength scale can be created and adjusted across the landscape of the plasmonic system at a step resolution of λ/20. These findings introduce a new approach for nano-circuitry, bio-assay addressing and imaging applications.

Numerical simulation of a hovering rotor using embedded grids

NASA Technical Reports Server (NTRS)

Duque, Earl-Peter N.; Srinivasan, Ganapathi R.

1992-01-01

The flow field for a rotor blade in hover was computed by numerically solving the compressible thin-layer Navier-Stokes equations on embedded grids. In this work, three embedded grids were used to discretize the flow field - one for the rotor blade and two to convect the rotor wake. The computations were performed at two hovering test conditions, for a two-bladed rectangular rotor of aspect ratio six. The results compare fairly with experiment and illustrates the use of embedded grids in solving helicopter type flow fields.

Numerical Model of Multiple Scattering and Emission from Layering Snowpack for Microwave Remote Sensing

NASA Astrophysics Data System (ADS)

Jin, Y.; Liang, Z.

2002-12-01

The vector radiative transfer (VRT) equation is an integral-deferential equation to describe multiple scattering, absorption and transmission of four Stokes parameters in random scatter media. From the integral formal solution of VRT equation, the lower order solutions, such as the first-order scattering for a layer medium or the second order scattering for a half space, can be obtained. The lower order solutions are usually good at low frequency when high-order scattering is negligible. It won't be feasible to continue iteration for obtaining high order scattering solution because too many folds integration would be involved. In the space-borne microwave remote sensing, for example, the DMSP (Defense Meterological Satellite Program) SSM/I (Special Sensor Microwave/Imager) employed seven channels of 19, 22, 37 and 85GHz. Multiple scattering from the terrain surfaces such as snowpack cannot be neglected at these channels. The discrete ordinate and eigen-analysis method has been studied to take into account for multiple scattering and applied to remote sensing of atmospheric precipitation, snowpack etc. Snowpack was modeled as a layer of dense spherical particles, and the VRT for a layer of uniformly dense spherical particles has been numerically studied by the discrete ordinate method. However, due to surface melting and refrozen crusts, the snowpack undergoes stratifying to form inhomegeneous profiles of the ice grain size, fractional volume and physical temperature etc. It becomes necessary to study multiple scattering and emission from stratified snowpack of dense ice grains. But, the discrete ordinate and eigen-analysis method cannot be simply applied to multi-layers model, because numerically solving a set of multi-equations of VRT is difficult. Stratifying the inhomogeneous media into multi-slabs and employing the first order Mueller matrix of each thin slab, this paper developed an iterative method to derive high orders scattering solutions of whole scatter media. High order scattering and emission from inhomogeneous stratifying media of dense spherical particles are numerically obtained. The brightness temperature at low frequency such as 5.3 GHz without high order scattering and at SSM/I channels with high order scattering are obtained. This approach is also compared with the conventional discrete ordinate method for an uniform layer model. Numerical simulation for inhomogeneous snowpack is also compared with the measurements of microwave remote sensing.

Effect of film thickness on morphological evolution in dewetting and crystallization of polystyrene/poly(ε-caprolactone) blend films.

PubMed

Ma, Meng; He, Zhoukun; Yang, Jinghui; Chen, Feng; Wang, Ke; Zhang, Qin; Deng, Hua; Fu, Qiang

2011-11-01

In this Article, the morphological evolution in the blend thin film of polystyrene (PS)/poly(ε-caprolactone) (PCL) was investigated via mainly AFM. It was found that an enriched two-layer structure with PS at the upper layer and PCL at the bottom layer was formed during spinning coating. By changing the solution concentration, different kinds of crystal morphologies, such as finger-like, dendritic, and spherulitic-like, could be obtained at the bottom PCL layer. These different initial states led to the morphological evolution processes to be quite different from each other, so the phase separation, dewetting, and crystalline morphology of PS/PCL blend films as a function of time were studied. It was interesting to find that the morphological evolution of PS at the upper layer was largely dependent on the film thickness. For the ultrathin (15 nm) blend film, a liquid-solid/liquid-liquid dewetting-wetting process was observed, forming ribbons that rupture into discrete circular PS islands on voronoi finger-like PCL crystal. For the thick (30 nm) blend film, the liquid-liquid dewetting of the upper PS layer from the underlying adsorbed PCL layer was found, forming interconnected rim structures that rupture into discrete circular PS islands embedded in the single lamellar PCL dendritic crystal due to Rayleigh instability. For the thicker (60 nm) blend film, a two-step liquid-liquid dewetting process with regular holes decorated with dendritic PCL crystal at early annealing stage and small holes decorated with spherulite-like PCL crystal among the early dewetting holes at later annealing stage was observed. The mechanism of this unusual morphological evolution process was discussed on the basis of the entropy effect and annealing-induced phase separation.

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Zhang, Zuocheng; Li, Likai; Horng, Jason; Wang, Nai Zhou; Yang, Fangyuan; Yu, Yijun; Zhang, Yu; Chen, Guorui; Watanabe, Kenji; Taniguchi, Takashi; Chen, Xian Hui; Wang, Feng; Zhang, Yuanbo

2017-10-01

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for opto-electronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the charge transport in black phosphorus at room temperature; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs). The effect opens up opportunities for future development of electro-mechanical transducers based on black phosphorus, and we demonstrate strain gauges constructed from black phosphorus thin crystals.

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors.

PubMed

Zhang, Zuocheng; Li, Likai; Horng, Jason; Wang, Nai Zhou; Yang, Fangyuan; Yu, Yijun; Zhang, Yu; Chen, Guorui; Watanabe, Kenji; Taniguchi, Takashi; Chen, Xian Hui; Wang, Feng; Zhang, Yuanbo

2017-10-11

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for optoelectronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the density of thermally activated carriers; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs) at room temperature. The effect opens up opportunities for future development of electromechanical transducers based on black phosphorus, and we demonstrate an ultrasensitive strain gauge constructed from black phosphorus thin crystals.

Integrated mechanics for the passive damping of polymer-matrix composites and composite structures

NASA Technical Reports Server (NTRS)

Saravanos, D. A.; Chamis, Christos C.

1991-01-01

Some recent developments on integrated damping mechanics for unidirectional composites, laminates, and composite structures are reviewed. Simplified damping micromechanics relate the damping of on-axis and off-axis composites to constituent properties, fiber volume ratio, fiber orientation, temperature, and moisture. Laminate and structural damping mechanics for thin composites are summarized. Discrete layer damping mechanics for thick laminates, including the effects of interlaminar shear damping, are developed and semianalytical predictions of modal damping in thick simply supported specialty composite plates are presented. Applications show the advantages of the unified mechanics, and illustrate the effect of fiber volume ratio, fiber orientation, structural geometry, and temperature on the damping. Additional damping properties for composite plates of various laminations, aspect ratios, fiber content, and temperature illustrate the merits and ranges of applicability of each theory (thin or thick laminates).

Shapeable short circuit resistant capacitor

DOEpatents

Taylor, Ralph S.; Myers, John D.; Baney, William J.

2015-10-06

A ceramic short circuit resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The capacitor that exhibits a benign failure mode in which a multitude of discrete failure events result in a gradual loss of capacitance. Each event is a localized event in which localized heating causes an adjacent portion of one or both of the electrodes to vaporize, physically cleaning away electrode material from the failure site. A first metal electrode, a second metal electrode, and a ceramic dielectric layer between the electrodes are thin enough to be formed in a serpentine-arrangement with gaps between the first electrode and the second electrode that allow venting of vaporized electrode material in the event of a benign failure.

Discrete sensitivity derivatives of the Navier-Stokes equations with a parallel Krylov solver

NASA Technical Reports Server (NTRS)

Ajmani, Kumud; Taylor, Arthur C., III

1994-01-01

This paper solves an 'incremental' form of the sensitivity equations derived by differentiating the discretized thin-layer Navier Stokes equations with respect to certain design variables of interest. The equations are solved with a parallel, preconditioned Generalized Minimal RESidual (GMRES) solver on a distributed-memory architecture. The 'serial' sensitivity analysis code is parallelized by using the Single Program Multiple Data (SPMD) programming model, domain decomposition techniques, and message-passing tools. Sensitivity derivatives are computed for low and high Reynolds number flows over a NACA 1406 airfoil on a 32-processor Intel Hypercube, and found to be identical to those computed on a single-processor Cray Y-MP. It is estimated that the parallel sensitivity analysis code has to be run on 40-50 processors of the Intel Hypercube in order to match the single-processor processing time of a Cray Y-MP.

Prediction of unsteady separated flows on oscillating airfoils

NASA Technical Reports Server (NTRS)

Mccroskey, W. J.

1978-01-01

Techniques for calculating high Reynolds number flow around an airfoil undergoing dynamic stall are reviewed. Emphasis is placed on predicting the values of lift, drag, and pitching moments. Methods discussed include: the discrete potential vortex method; thin boundary layer method; strong interaction between inviscid and viscous flows; and solutions to the Navier-Stokes equations. Empirical methods for estimating unsteady airloads on oscillating airfoils are also described. These methods correlate force and moment data from wind tunnel tests to indicate the effects of various parameters, such as airfoil shape, Mach number, amplitude and frequency of sinosoidal oscillations, mean angle, and type of motion.

A three dimensional multigrid multiblock multistage time stepping scheme for the Navier-Stokes equations

NASA Technical Reports Server (NTRS)

Elmiligui, Alaa; Cannizzaro, Frank; Melson, N. D.

1991-01-01

A general multiblock method for the solution of the three-dimensional, unsteady, compressible, thin-layer Navier-Stokes equations has been developed. The convective and pressure terms are spatially discretized using Roe's flux differencing technique while the viscous terms are centrally differenced. An explicit Runge-Kutta method is used to advance the solution in time. Local time stepping, adaptive implicit residual smoothing, and the Full Approximation Storage (FAS) multigrid scheme are added to the explicit time stepping scheme to accelerate convergence to steady state. Results for three-dimensional test cases are presented and discussed.

Spectral collocation method with a flexible angular discretization scheme for radiative transfer in multi-layer graded index medium

NASA Astrophysics Data System (ADS)

Wei, Linyang; Qi, Hong; Sun, Jianping; Ren, Yatao; Ruan, Liming

2017-05-01

The spectral collocation method (SCM) is employed to solve the radiative transfer in multi-layer semitransparent medium with graded index. A new flexible angular discretization scheme is employed to discretize the solid angle domain freely to overcome the limit of the number of discrete radiative direction when adopting traditional SN discrete ordinate scheme. Three radial basis function interpolation approaches, named as multi-quadric (MQ), inverse multi-quadric (IMQ) and inverse quadratic (IQ) interpolation, are employed to couple the radiative intensity at the interface between two adjacent layers and numerical experiments show that MQ interpolation has the highest accuracy and best stability. Variable radiative transfer problems in double-layer semitransparent media with different thermophysical properties are investigated and the influence of these thermophysical properties on the radiative transfer procedure in double-layer semitransparent media is also analyzed. All the simulated results show that the present SCM with the new angular discretization scheme can predict the radiative transfer in multi-layer semitransparent medium with graded index efficiently and accurately.

System for analysis of explosives

DOEpatents

Haas, Jeffrey S [San Ramon, CA

2010-06-29

A system for analysis of explosives. Samples are spotted on a thin layer chromatography plate. Multi-component explosives standards are spotted on the thin layer chromatography plate. The thin layer chromatography plate is dipped in a solvent mixture and chromatography is allowed to proceed. The thin layer chromatography plate is dipped in reagent 1. The thin layer chromatography plate is heated. The thin layer chromatography plate is dipped in reagent 2.

Microfluidic Controlled Conformal Coating of Particles

NASA Astrophysics Data System (ADS)

Tsai, Scott; Wexler, Jason; Wan, Jiandi; Stone, Howard

2011-11-01

Coating flows are an important class of fluid mechanics problems. Typically a substrate is coated with a moving continuous film, but it is also possible to consider coating of discrete objects. In particular, in applications involving coating of particles that are useful in drug delivery, the coatings act as drug-carrying vehicles, while in cell therapy a thin polymeric coating is required to protect the cells from the host's immune system. Although many functional capabilities have been developed for lab-on-a-chip devices, a technique for coating has not been demonstrated. We present a microfluidic platform developed to coat micron-size spheres with a thin aqueous layer by magnetically pulling the particles from the aqueous phase to the non-aqueous phase in a co-flow. Coating thickness can be adjusted by the average fluid speed and the number of beads encapsulated inside a single coat is tuned by the ratio of magnetic to interfacial forces acting on the beads.

21 CFR 862.2270 - Thin-layer chromatography system for clinical use.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Thin-layer chromatography system for clinical use... Instruments § 862.2270 Thin-layer chromatography system for clinical use. (a) Identification. A thin-layer... a mixture. The mixture of compounds is absorbed onto a stationary phase or thin layer of inert...

Method of transferring a thin crystalline semiconductor layer

DOEpatents

Nastasi, Michael A [Sante Fe, NM; Shao, Lin [Los Alamos, NM; Theodore, N David [Mesa, AZ

2006-12-26

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Origin of leucite-rich and sanidine-rich flow layers in the Leucite Hills Volcanic Field, Wyoming

NASA Astrophysics Data System (ADS)

Gunter, W. D.; Hoinkes, Georg; Ogden, Palmer; Pajari, G. E.

1990-09-01

Two types of orendite (sanidine-phlogopite lamproite) and wyomingite (leucite-phlogopite lamproite) intraflow layering are present in the ultrapotassic Leucite Hills Volcanic Field, Wyoming. In large-scale layering, wyomingites are confined to the base of the flow, while in centimeter-scale layering, orendite and wyomingite alternate throughout the flow. The mineralogy of the orendites and wyomingites are the same; only the relative amount of each mineral vary substantially. The chemical compositions of adjacent layers of wyomingite and orendite are almost identical except for water. The centimeter-scale flow layering probably represents fossil streamlines of the lava and therefore defines the path of circulation of the viscous melt. Toward the front of the flow, the layers are commonly folded. Structures present which are indicative that the flows may have possessed a yield strength are limb shears, boudinage, and slumping. Phlogopite phenocrysts are poorly aligned in the orendite layers, while they are often in subparallel alignment in the wyomingite layers; and they are used as a measure of shearing intensity during emplacement of the flow. Vesicle volumes are concentrated in the orendite layers. In the large-scale layering, a discontinuous base rubble zone of autobreccia is overlain by a thin platy zone followed by a massive zone which composes more than the upper 75% of the flow. Consequently, we feel that the origin of the layering may be related to shearing. Two extremes in the geometry of shearing are proposed: closely spaced, thin, densely sheared layers separated by discrete intervals throughout a lava flow as in the centimeter-scale layering and classical plug flow where all the shearing is confined to the base as in the large-scale layering. A mechanism is proposed which causes thixotropic behavior and localizes shearing: the driving force is the breakdown of molecular water to form T-OH bonds which establishes a chemical potential gradient for water in the melt. The higher activity of water in the nonsheared regions allows sandine to crystallize, whereas the lower activity of water in the areas of active shearing causes leucite to crystallize.

A new discrete Kirchhoff-Mindlin element based on Mindlin-Reissner plate theory and assumed shear strain fields. I - An extended DKT element for thick-plate bending analysis. II - An extended DKQ element for thick-plate bending analysis

NASA Astrophysics Data System (ADS)

Katili, Irwan

1993-06-01

A new three-node nine-degree-of-freedom triangular plate bending element is proposed which is valid for the analysis of both thick and thin plates. The element, called the discrete Kirchhoff-Mindlin triangle (DKMT), has a proper rank, passes the patch test for thin and thick plates in an arbitrary mesh, and is free of shear locking. As an extension of the DKMT element, a four-node element with 3 degrees of freedom per node is developed. The element, referred to as DKMQ (discrete Kirchhoff-Mindlin quadrilateral) is found to provide good results for both thin and thick plates without any compatibility problems.

Deformation in Micro Roll Forming of Bipolar Plate

NASA Astrophysics Data System (ADS)

Zhang, P.; Pereira, M.; Rolfe, B.; Daniel, W.; Weiss, M.

2017-09-01

Micro roll forming is a new processing technology to produce bipolar plates for Proton Exchange Membrane Fuel Cells (PEMFC) from thin stainless steel foil. To gain a better understanding of the deformation of the material in this process, numerical studies are necessary before experimental implementation. In general, solid elements with several layers through the material thickness are required to analyse material thinning in processes where the deformation mode is that of bending combined with tension, but this results in high computational costs. This pure solid element approach is especially time-consuming when analysing roll forming processes which generally involves feeding a long strip through a number of successive roll stands. In an attempt to develop a more efficient modelling approach without sacrificing accuracy, two solutions are numerically analysed with ABAQUS/Explicit in this paper. In the first, a small patch of solid elements over the strip width and in the centre of the “pre-cut” sheet is coupled with shell elements while in the second approach pure shell elements are used to discretize the full sheet. In the first approach, the shell element enables accounting for the effect of material being held in the roll stands on material flow while solid elements can be applied to analyse material thinning in a small discrete area of the sheet. Experimental micro roll forming trials are performed to prove that the coupling of solid and shell elements can give acceptable model accuracy while using shell elements alone is shown to result in major deviations between numerical and experimental results.

Documentation for the MODFLOW 6 Groundwater Flow Model

USGS Publications Warehouse

Langevin, Christian D.; Hughes, Joseph D.; Banta, Edward R.; Niswonger, Richard G.; Panday, Sorab; Provost, Alden M.

2017-08-10

This report documents the Groundwater Flow (GWF) Model for a new version of MODFLOW called MODFLOW 6. The GWF Model for MODFLOW 6 is based on a generalized control-volume finite-difference approach in which a cell can be hydraulically connected to any number of surrounding cells. Users can define the model grid using one of three discretization packages, including (1) a structured discretization package for defining regular MODFLOW grids consisting of layers, rows, and columns, (2) a discretization by ver­tices package for defining layered unstructured grids consisting of layers and cells, and (3) a general unstruc­tured discretization package for defining flexible grids comprised of cells and their connection properties. For layered grids, a new capability is available for removing thin cells and vertically connecting cells overlying and underlying the thin cells. For complex problems involving water-table conditions, an optional Newton-Raphson formulation, based on the formulations in MODFLOW-NWT and MODFLOW-USG, can be acti­vated. Use of the Newton-Raphson formulation will often improve model convergence and allow solutions to be obtained for difficult problems that cannot be solved using the traditional wetting and drying approach. The GWF Model is divided into “packages,” as was done in previous MODFLOW versions. A package is the part of the model that deals with a single aspect of simulation. Packages included with the GWF Model include those related to internal calculations of groundwater flow (discretization, initial conditions, hydraulic conduc­tance, and storage), stress packages (constant heads, wells, recharge, rivers, general head boundaries, drains, and evapotranspiration), and advanced stress packages (streamflow routing, lakes, multi-aquifer wells, and unsaturated zone flow). An additional package is also available for moving water available in one package into the individual features of the advanced stress packages. The GWF Model also has packages for obtaining and controlling output from the model. This report includes detailed explanations of physical and mathematical concepts on which the GWF Model and its packages are based.Like its predecessors, MODFLOW 6 is based on a highly modular structure; however, this structure has been extended into an object-oriented framework. The framework includes a robust and generalized numeri­cal solution object, which can be used to solve many different types of models. The numerical solution object has several different matrix preconditioning options as well as several methods for solving the linear system of equations. In this new framework, the GWF Model itself is an object as are each of the GWF Model packages. A benefit of the object-oriented structure is that multiple objects of the same type can be used in a single sim­ulation. Thus, a single forward run with MODFLOW 6 may contain multiple GWF Models. GWF Models can be hydraulically connected using GWF-GWF Exchange objects. Connecting GWF models in different ways permits the user to utilize a local grid refinement strategy consisting of parent and child models or to couple adjacent GWF Models. An advantage of the approach implemented in MODFLOW 6 is that multiple models and their exchanges can be incorporated into a single numerical solution object. With this design, models can be tightly coupled at the matrix level.

Triboelectric generator

DOEpatents

Wang, Zhong L; Fan, Fengru; Lin, Long; Zhu, Guang; Pan, Caofeng; Zhou, Yusheng

2015-11-03

A generator includes a thin first contact charging layer and a thin second contact charging layer. The thin first contact charging layer includes a first material that has a first rating on a triboelectric series. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer includes a second material that has a second rating on a triboelectric series that is more negative than the first rating. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer is disposed adjacent to the first contact charging layer so that the second side of the second contact charging layer is in contact with the second side of the first contact charging layer.

Process for producing dispersed particulate composite materials

DOEpatents

Henager, Jr., Charles H.; Hirth, John P.

1995-01-01

This invention is directed to a process for forming noninterwoven dispersed particulate composite products. In one case a composite multi-layer film product comprises a substantially noninterwoven multi-layer film having a plurality of discrete layers. This noninterwoven film comprises at least one discrete layer of a first material and at least one discrete layer of a second material. In another case the first and second materials are blended together with each other. In either case, the first material comprises a metalloid and the second material a metal compound. At least one component of a first material in one discrete layer undergoes a solid state displacement reaction with at least one component of a second material thereby producing the requisite noninterwoven composite film product. Preferably, the first material comprises silicon, the second material comprises Mo.sub.2 C, the third material comprises SiC and the fourth material comprises MoSi.sub.2.

Numerical modeling of fold-and-thrust belts: Applications to Kuqa foreland fold belt, China

NASA Astrophysics Data System (ADS)

Yin, H.; Morgan, J. K.; Zhang, J.; Wang, Z.

2009-12-01

We constructed discrete element models to simulate the evolution of fold-and-thrust belts. The impact of rock competence and decollement strength on the geometric pattern and deformation mechanics of fold-and-thrust belts has been investigated. The models reproduced some characteristic features of fold-and-thrust belts, such as faulted detachment folds, pop-ups, far-traveled thrust sheets, passive-roof duplexes, and back thrusts. In general, deformation propagates farther above a weak decollement than above a strong decollement. Our model results confirm that fold-and-thrust belts with strong frictional decollements develop relatively steep and narrow wedges formed by closely spaced imbricate thrust slices, whereas fold belts with weak decollements form wide low-taper wedges composed of faulted detachment folds, pop-ups, and back thrusts. Far-traveled thrust sheets and passive-roof duplexes are observed in the model with a strong lower decollement and a weak upper detachment. Model results also indicate that the thickness of the weak layer is critical. If it is thick enough, it acts as a ductile layer that is able to flow under differential stress, which helps to partition deformation above and below it. The discrete element modeling results were used to interpret the evolution of Kuqa Cenozoic fold-and-thrust belt along northern Tarim basin, China. Seismic and well data show that the widely distributed Paleogene rock salt has a significant impact on the deformation in this area. Structures beneath salt are closely spaced imbricate thrust and passive-roof duplex systems. Deformation above salt propagates much farther than below the salt. Faults above salt are relatively wide spaced. A huge controversy over the Kuqa fold-and-thrust belt is whether it is thin-skinned or thick-skinned. With the insights from DEM results, we suggest that Kuqa structures are mostly thin-skinned with Paleogene salt as decollement, except for the rear part near the backstop, where the faults below the salt are thick-skinned and involve the Paleozoic basement. We think that most basement-involved sub-salt faults, if not all, formed later than the above salt-detached thin-skinned structures.

Multilevel-3D Bit Patterned Magnetic Media with 8 Signal Levels Per Nanocolumn

PubMed Central

Amos, Nissim; Butler, John; Lee, Beomseop; Shachar, Meir H.; Hu, Bing; Tian, Yuan; Hong, Jeongmin; Garcia, Davil; Ikkawi, Rabee M.; Haddon, Robert C.; Litvinov, Dmitri; Khizroev, Sakhrat

2012-01-01

This letter presents an experimental study that shows that a 3rd physical dimension may be used to further increase information packing density in magnetic storage devices. We demonstrate the feasibility of at least quadrupling the magnetic states of magnetic-based data storage devices by recording and reading information from nanopillars with three magnetically-decoupled layers. Magneto-optical Kerr effect microscopy and magnetic force microscopy analysis show that both continuous (thin film) and patterned triple-stack magnetic media can generate eight magnetically-stable states. This is in comparison to only two states in conventional magnetic recording. Our work further reveals that ferromagnetic interaction between magnetic layers can be reduced by combining Co/Pt and Co/Pd multilayers media. Finally, we are showing for the first time an MFM image of multilevel-3D bit patterned media with 8 discrete signal levels. PMID:22808105

Multilevel-3D bit patterned magnetic media with 8 signal levels per nanocolumn.

PubMed

Amos, Nissim; Butler, John; Lee, Beomseop; Shachar, Meir H; Hu, Bing; Tian, Yuan; Hong, Jeongmin; Garcia, Davil; Ikkawi, Rabee M; Haddon, Robert C; Litvinov, Dmitri; Khizroev, Sakhrat

2012-01-01

This letter presents an experimental study that shows that a 3(rd) physical dimension may be used to further increase information packing density in magnetic storage devices. We demonstrate the feasibility of at least quadrupling the magnetic states of magnetic-based data storage devices by recording and reading information from nanopillars with three magnetically-decoupled layers. Magneto-optical Kerr effect microscopy and magnetic force microscopy analysis show that both continuous (thin film) and patterned triple-stack magnetic media can generate eight magnetically-stable states. This is in comparison to only two states in conventional magnetic recording. Our work further reveals that ferromagnetic interaction between magnetic layers can be reduced by combining Co/Pt and Co/Pd multilayers media. Finally, we are showing for the first time an MFM image of multilevel-3D bit patterned media with 8 discrete signal levels.

ELM induced divertor heat loads on TCV

NASA Astrophysics Data System (ADS)

Marki, J.; Pitts, R. A.; Horacek, J.; Tskhakaya, D.; TCV Team

2009-06-01

Results are presented for heat loads at the TCV outer divertor target during ELMing H-mode using a fast IR camera. Benefitting from a recent surface cleaning of the entire first wall graphite armour, a comparison of the transient thermal response of freshly cleaned and untreated tile surfaces (coated with thick co-deposited layers) has been performed. The latter routinely exhibit temperature transients exceeding those of the clean ones by a factor ˜3, even if co-deposition throughout the first days of operation following the cleaning process leads to the steady regrowth of thin layers. Filaments are occasionally observed during the ELM heat flux rise phase, showing a spatial structure consistent with energy release at discrete toroidal locations in the outer midplane vicinity and with individual filaments carrying ˜1% of the total ELM energy. The temporal waveform of the ELM heat load is found to be in good agreement with the collisionless free streaming particle model.

Discrete-Layer Piezoelectric Plate and Shell Models for Active Tip-Clearance Control

NASA Technical Reports Server (NTRS)

Heyliger, P. R.; Ramirez, G.; Pei, K. C.

1994-01-01

The objectives of this work were to develop computational tools for the analysis of active-sensory composite structures with added or embedded piezoelectric layers. The targeted application for this class of smart composite laminates and the analytical development is the accomplishment of active tip-clearance control in turbomachinery components. Two distinct theories and analytical models were developed and explored under this contract: (1) a discrete-layer plate theory and corresponding computational models, and (2) a three dimensional general discrete-layer element generated in curvilinear coordinates for modeling laminated composite piezoelectric shells. Both models were developed from the complete electromechanical constitutive relations of piezoelectric materials, and incorporate both displacements and potentials as state variables. This report describes the development and results of these models. The discrete-layer theories imply that the displacement field and electrostatic potential through-the-thickness of the laminate are described over an individual layer rather than as a smeared function over the thickness of the entire plate or shell thickness. This is especially crucial for composites with embedded piezoelectric layers, as the actuating and sensing elements within these layers are poorly represented by effective or smeared properties. Linear Lagrange interpolation polynomials were used to describe the through-thickness laminate behavior. Both analytic and finite element approximations were used in the plane or surface of the structure. In this context, theoretical developments are presented for the discrete-layer plate theory, the discrete-layer shell theory, and the formulation of an exact solution for simply-supported piezoelectric plates. Finally, evaluations and results from a number of separate examples are presented for the static and dynamic analysis of the plate geometry. Comparisons between the different approaches are provided when possible, and initial conclusions regarding the accuracy and limitations of these models are given.

Combining Airborne and Lidar Measurements for Attribution of Aerosol Layers

NASA Astrophysics Data System (ADS)

Nikandrova, A.; Väänänen, R.; Tabakova, K.; Kerminen, V. M.; O'Connor, E.

2016-12-01

The aim of this work was to identify discrete aerosol layers and diagnose their origin, investigate the strength of mixing within the free-troposphere and with the boundary layer (BL), and understand the impact that mixing has on local and long-range transport of aerosol. For these purposes we combined airborne in-situ aerosol measurements with data obtained by a High Spectral Resolution Lidar (HSRL). The HSRL was deployed in Hyytiälä, Southern Finland, from January to September 2014 as a part of the US DoE ARM (Atmospheric Radiation Measurement) Mobile Facility during the BAECC (Biogenic Aerosols - Effects on Cloud and Climate) Campaign. Two airborne campaigns took place in April and August 2014 during the BAECC campaign. The vertical profile of backscatter coefficient from the HSRL was used to diagnose the location and depth of significant aerosol layers in the atmosphere. Frequently, in addition to the BL, one or two tropospheric layers were identified. In-situ measurements of the aerosol size distribution in these layers were obtained from a Scanning Mobility Particle Sizer (SMPS) and Optical Particle Sizer (OPS), that were installed on board the aircraft; these measurements were combined to cover sizes ranging from 10 nm to 10 µm. As expected, the highest number concentration of aerosol particles at all size ranges was found predominantly in the BL. Many upper layers had size distributions with a similar shape to that in the BL but with overall lower concentrations attributed to dilution of particles into a large volume of air. Hence, these layers were likely of very similar origin to the air in the BL and presumably were the result of lofted residual layers. Intervening layers however, could contain markedly different distribution shapes, which could be attributed to both different air mass origins, and different ambient relative humidity. Potential for mixing between two discreet elevated layers was often seen as a thin interface layer, which exhibited a combination of properties from both layers. Strong turbulent mixing ensured lower variability in the size distribution in the BL on short timescales, with more variability seen in the free troposphere. 96-hour back trajectories from multiple altitudes were used to diagnose the air mass origin of each discrete layer.

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2001-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Patch testing with thin-layer chromatograms of chamomile tea in patients allergic to sesquiterpene lactones.

PubMed

Lundh, Kerstin; Gruvberger, Birgitta; Möller, Halvor; Persson, Lena; Hindsén, Monica; Zimerson, Erik; Svensson, Ake; Bruze, Magnus

2007-10-01

Patients with contact allergy to sesquiterpene lactones (SLs) are usually hypersensitive to Asteraceae plant products such as herbal teas. The objective of this study was to show sensitizers in chamomile tea by patch testing with thin-layer chromatograms. Tea made from German chamomile was separated by thin-layer chromatography. Strips of the thin-layer chromatograms were used for patch testing SL-positive patients. 15 (43%) of 35 patients tested positively to 1 or more spots on the thin-layer chromatogram, with many individual reaction patterns. Patch testing with thin-layer chromatograms of German chamomile tea showed the presence of several allergens.

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Retrieving quasi-phase-matching structure with discrete layer-peeling method.

PubMed

Zhang, Q W; Zeng, X L; Wang, M; Wang, T Y; Chen, X F

2012-07-02

An approach to reconstruct a quasi-phase-matching grating by using a discrete layer-peeling algorithm is presented. Experimentally measured output spectra of Šolc-type filters, based on uniform and chirped QPM structures, are used in the discrete layer-peeling algorithm. The reconstructed QPM structures are in agreement with the exact structures used in the experiment and the method is verified to be accurate and efficient in quality inspection on quasi-phase-matching grating.

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

Hierarchically structured nanowires on and nanosticks in ZnO microtubes

PubMed Central

Rivaldo-Gómez, C. M.; Cabrera-Pasca, G. A.; Zúñiga, A.; Carbonari, A. W.; Souza, J. A.

2015-01-01

We report both coaxial core-shell structured microwires and ZnO microtubes with growth of nanosticks in the inner and nanowires on the outer surface as a novel hierarchical micro/nanoarchitecture. First, a core-shell structure is obtained—the core is formed by metallic Zn and the semiconducting shell is comprised by a thin oxide layer covered with a high density of nanowires. Such Zn/ZnO core-shell array showed magnetoresistance effect. It is suggested that magnetic moments in the nanostructured shell superimposes to the external magnetic field enhancing the MR effect. Second, microtubes decorated with nanowires on the external surface are obtained. In an intermediate stage, a hierarchical morphology comprised of discrete nanosticks in the inner surface of the microtube has been found. Hyperfine interaction measurements disclosed the presence of confined metallic Zn regions at the interface between linked ZnO grains forming a chain and a ZnO thicker layer. Surprisingly, the metallic clusters form highly textured thin flat regions oriented parallel to the surface of the microtube as revealed by the electrical field gradient direction. The driving force to grow the internal nanosticks has been ascribed to stress-induced migration of Zn ions due to compressive stress caused by the presence of these confined regions. PMID:26456527

Depositing bulk or micro-scale electrodes

DOEpatents

Shah, Kedar G.; Pannu, Satinderpall S.; Tolosa, Vanessa; Tooker, Angela C.; Sheth, Heeral J.; Felix, Sarah H.; Delima, Terri L.

2016-11-01

Thicker electrodes are provided on microelectronic device using thermo-compression bonding. A thin-film electrical conducting layer forms electrical conduits and bulk depositing provides an electrode layer on the thin-film electrical conducting layer. An insulating polymer layer encapsulates the electrically thin-film electrical conducting layer and the electrode layer. Some of the insulating layer is removed to expose the electrode layer.

Method for bonding thin film thermocouples to ceramics

DOEpatents

Kreider, Kenneth G.

1993-01-01

A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium. The thin layer of reactive metal may be deposited by sputtering in ultra high purity argon in a vacuum of approximately 2 milliTorr (0.3 Pascals).

Fast method for reactor and feature scale coupling in ALD and CVD

DOEpatents

Yanguas-Gil, Angel; Elam, Jeffrey W.

2017-08-08

Transport and surface chemistry of certain deposition techniques is modeled. Methods provide a model of the transport inside nanostructures as a single-particle discrete Markov chain process. This approach decouples the complexity of the surface chemistry from the transport model, thus allowing its application under general surface chemistry conditions, including atomic layer deposition (ALD) and chemical vapor deposition (CVD). Methods provide for determination of determine statistical information of the trajectory of individual molecules, such as the average interaction time or the number of wall collisions for molecules entering the nanostructures as well as to track the relative contributions to thin-film growth of different independent reaction pathways at each point of the feature.

Multi-layer assemblies with predetermined stress profile and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2003-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Optical Properties of Hybrid Inorganic/Organic Thin Film Encapsulation Layers for Flexible Top-Emission Organic Light-Emitting Diodes.

PubMed

An, Jae Seok; Jang, Ha Jun; Park, Cheol Young; Youn, Hongseok; Lee, Jong Ho; Heo, Gi-Seok; Choi, Bum Ho; Lee, Choong Hun

2015-10-01

Inorganic/organic hybrid thin film encapsulation layers consist of a thin Al2O3 layer together with polymer material. We have investigated optical properties of thin film encapsulation layers for top-emission flexible organic light-emitting diodes. The transmittance of hybrid thin film encapsulation layers and the electroluminescent spectrum of organic light-emitting diodes that were passivated by hybrid organic/inorganic thin film encapsulation layers were also examined as a function of the thickness of inorganic Al203 and monomer layers. The number of interference peaks, their intensity, and their positions in the visible range can be controlled by varying the thickness of inorganic Al2O3 layer. On the other hand, changing the thickness of monomer layer had a negligible effect on the optical properties. We also verified that there is a trade-off between transparency in the visible range and the permeation of water vapor in hybrid thin film encapsulation layers. As the number of dyads decreased, optical transparency improved while the water vapor permeation barrier was degraded. Our study suggests that, in top-emission organic light-emitting diodes, the thickness of each thin film encapsulation layer, in particular that of the inorganic layer, and the number of dyads should be controlled for highly efficient top-emission flexible organic light-emitting diodes.

Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

NASA Astrophysics Data System (ADS)

Petti, Luisa; Pattanasattayavong, Pichaya; Lin, Yen-Hung; Münzenrieder, Niko; Cantarella, Giuseppe; Yaacobi-Gross, Nir; Yan, Feng; Tröster, Gerhard; Anthopoulos, Thomas D.

2017-03-01

We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V-1 s-1 and 0.013 cm2 V-1 s-1, respectively, current on/off ratio in the range 102-104, and maximum operating voltages between -3.5 and -10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as -3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

Design of the Coordinate Transformation Function for Cylindrical Acoustic Cloaks with a Quantity of Discrete Layers

NASA Astrophysics Data System (ADS)

Cai, Li; Wen, Ji-Hong; Yu, Dian-Long; Lu, Zhi-Miao; Wen, Xi-Sen

2014-09-01

Acoustic cloak based on coordinate transformation is of great topical interest and has promise in potential applications such as sound transparency and insulation. The frequency response of acoustic cloaks with a quantity of discrete homogeneous layers is analyzed by the acoustic scattering theory. The effect of coordinate transformation function on the acoustic total scattering cross section is discussed to achieve low scattering with only a few layers of anisotropic metamaterials. Also, the physics of acoustic wave interaction with the interfaces between the discrete layers inside the cloak shell is discussed. These results provide a better way of designing a multilayered acoustic cloak with fewer layers.

Composite polymeric film and method for its use in installing a very-thin polymeric film in a device

DOEpatents

Duchane, D.V.; Barthell, B.L.

1982-04-26

A composite polymeric film and a method for its use in forming and installing a very thin (< 10 ..mu..m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectiely dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to e successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Composite polymeric film and method for its use in installing a very thin polymeric film in a device

DOEpatents

Duchane, David V.; Barthell, Barry L.

1984-01-01

A composite polymeric film and a method for its use in forming and installing a very thin (<10 .mu.m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectively dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to be successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Higher modes of the Orr-Sommerfeld problem for boundary layer flows

NASA Technical Reports Server (NTRS)

Lakin, W. D.; Grosch, C. E.

1983-01-01

The discrete spectrum of the Orr-Sommerfeld problem of hydrodynamic stability for boundary layer flows in semi-infinite regions is examined. Related questions concerning the continuous spectrum are also addressed. Emphasis is placed on the stability problem for the Blasius boundary layer profile. A general theoretical result is given which proves that the discrete spectrum of the Orr-Sommerfeld problem for boundary layer profiles (U(y), 0,0) has only a finite number of discrete modes when U(y) has derivatives of all orders. Details are given of a highly accurate numerical technique based on collocation with splines for the calculation of stability characteristics. The technique includes replacement of 'outer' boundary conditions by asymptotic forms based on the proper large parameter in the stability problem. Implementation of the asymptotic boundary conditions is such that there is no need to make apriori distinctions between subcases of the discrete spectrum or between the discrete and continuous spectrums. Typical calculations for the usual Blasius problem are presented.

Nonlinear optical effects in a three-nanolayer metal sandwich assembly

NASA Astrophysics Data System (ADS)

Khmelinskii, Igor; Makarov, Vladimir I.

2018-04-01

We report spectral properties and frequency summing that induce superemission (SE) in sandwich structures built of Co nanolayers. We found that separate Co films with a layer thickness of 8.1, 9.2, and 11.3 nm have discrete absorption spectra, originating in transverse quantum confinement in such thin metal films. The surface plasmon resonance in this system should appear at energies over 50 000 cm-1, with its longer-wavelength tail easily observable. All of the nanolayers studied also presented discrete emission spectra, with the emission bands strongly overlapping due to large bandwidths (1500-2300 cm-1). The emission decay is described by a single-exponential function with the lifetime of 103±5 ns. Similarly, the sandwich assembly with three Co nanolayers separated by two BN nanolayers also has discrete lines in its absorption spectrum. The spectrum of the assembly is a superposition of the respective spectra of the individual Co layers. We report that the assembly can sum the pumping radiation photons, producing photons with a higher energy. This excitation summing/exciton joining effect, discovered in sandwich film systems, is reported for the first time. Exiting the two outside Co nanolayers at specific frequencies, the Co nanolayer in the middle produces the sum frequency. We identified this emission as SE, with a bandwidth of only 179±5 cm-1. This superemission band appeared with the rise time of 36±3 ns and disappeared with 73±5 ns decay time, with the estimated SE quantum yield of 0.063. We analyzed the energy transfer by the exchange mechanism in detail, although a contribution of the electric dipole-dipole mechanism could not be excluded.

Flexural waves induced by electro-impulse deicing forces

NASA Technical Reports Server (NTRS)

Gien, P. H.

1990-01-01

The generation, reflection and propagation of flexural waves created by electroimpulsive deicing forces are demonstrated both experimentally and analytically in a thin circular plate and a thin semicylindrical shell. Analytical prediction of these waves with finite element models shows good correlation with acceleration and displacement measurements at discrete points on the structures studied. However, sensitivity to spurious flexural waves resulting from the spatial discretization of the structures is shown to be significant. Consideration is also given to composite structures as an extension of these studies.

Fabrication of low-temperature solid oxide fuel cells with a nanothin protective layer by atomic layer deposition

PubMed Central

2013-01-01

Anode aluminum oxide-supported thin-film fuel cells having a sub-500-nm-thick bilayered electrolyte comprising a gadolinium-doped ceria (GDC) layer and an yttria-stabilized zirconia (YSZ) layer were fabricated and electrochemically characterized in order to investigate the effect of the YSZ protective layer. The highly dense and thin YSZ layer acted as a blockage against electron and oxygen permeation between the anode and GDC electrolyte. Dense GDC and YSZ thin films were fabricated using radio frequency sputtering and atomic layer deposition techniques, respectively. The resulting bilayered thin-film fuel cell generated a significantly higher open circuit voltage of approximately 1.07 V compared with a thin-film fuel cell with a single-layered GDC electrolyte (approximately 0.3 V). PMID:23342963

Annual Research Briefs

NASA Technical Reports Server (NTRS)

Spinks, Debra (Compiler)

1997-01-01

This report contains the 1997 annual progress reports of the research fellows and students supported by the Center for Turbulence Research (CTR). Titles include: Invariant modeling in large-eddy simulation of turbulence; Validation of large-eddy simulation in a plain asymmetric diffuser; Progress in large-eddy simulation of trailing-edge turbulence and aeronautics; Resolution requirements in large-eddy simulations of shear flows; A general theory of discrete filtering for LES in complex geometry; On the use of discrete filters for large eddy simulation; Wall models in large eddy simulation of separated flow; Perspectives for ensemble average LES; Anisotropic grid-based formulas for subgrid-scale models; Some modeling requirements for wall models in large eddy simulation; Numerical simulation of 3D turbulent boundary layers using the V2F model; Accurate modeling of impinging jet heat transfer; Application of turbulence models to high-lift airfoils; Advances in structure-based turbulence modeling; Incorporating realistic chemistry into direct numerical simulations of turbulent non-premixed combustion; Effects of small-scale structure on turbulent mixing; Turbulent premixed combustion in the laminar flamelet and the thin reaction zone regime; Large eddy simulation of combustion instabilities in turbulent premixed burners; On the generation of vorticity at a free-surface; Active control of turbulent channel flow; A generalized framework for robust control in fluid mechanics; Combined immersed-boundary/B-spline methods for simulations of flow in complex geometries; and DNS of shock boundary-layer interaction - preliminary results for compression ramp flow.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2015-07-28

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

Large area polysilicon films with predetermined stress characteristics and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Comparison Between Navier-Stokes and Thin-Layer Computations for Separated Supersonic Flow

NASA Technical Reports Server (NTRS)

Degani, David; Steger, Joseph L.

1983-01-01

In the numerical simulation of high Reynolds-number flow, one can frequently supply only enough grid points to resolve the viscous terms in a thin layer. As a consequence, a body-or stream-aligned coordinate system is frequently used and viscous terms in this direction are discarded. It is argued that these terms cannot be resolved and computational efficiency is gained by their neglect. Dropping the streamwise viscous terms in this manner has been termed the thin-layer approximation. The thin-layer concept is an old one, and similar viscous terms are dropped, for example, in parabolized Navier-Stokes schemes. However, such schemes also make additional assumptions so that the equations can be marched in space, and such a restriction is not usually imposed on a thin-layer model. The thin-layer approximation can be justified in much the same way as the boundary-layer approximation; it requires, therefore, a body-or stream-aligned coordinate and a high Reynolds number. Unlike the boundary-layer approximation, the same equations are used throughout, so there is no matching problem. Furthermore, the normal momentum equation is not simplified and the convection terms are not one-sided differenced for marching. Consequently, the thin-layer equations are numerically well behaved at separation and require no special treatment there. Nevertheless, the thin-layer approximation receives criticism. It has been suggested that the approximation is invalid at separation and, more recently, that it is inadequate for unsteady transonic flow. Although previous comparisons between the thin-layer and Navier-Stokes equations have been made, these comparisons have not been adequately documented.

Motion of Discrete Interfaces Through Mushy Layers

NASA Astrophysics Data System (ADS)

Braides, Andrea; Solci, Margherita

2016-08-01

We study the geometric motion of sets in the plane derived from the homogenization of discrete ferromagnetic energies with weak inclusions. We show that the discrete sets are composed by a `bulky' part and an external `mushy region' composed only of weak inclusions. The relevant motion is that of the bulky part, which asymptotically obeys to a motion by crystalline mean curvature with a forcing term, due to the energetic contribution of the mushy layers, and pinning effects, due to discreteness. From an analytical standpoint, it is interesting to note that the presence of the mushy layers implies only a weak and not strong convergence of the discrete motions, so that the convergence of the energies does not commute with the evolution. From a mechanical standpoint it is interesting to note the geometrical similarity of some phenomena in the cooling of binary melts.

A hierarchical preconditioner for the electric field integral equation on unstructured meshes based on primal and dual Haar bases

NASA Astrophysics Data System (ADS)

Adrian, S. B.; Andriulli, F. P.; Eibert, T. F.

2017-02-01

A new hierarchical basis preconditioner for the electric field integral equation (EFIE) operator is introduced. In contrast to existing hierarchical basis preconditioners, it works on arbitrary meshes and preconditions both the vector and the scalar potential within the EFIE operator. This is obtained by taking into account that the vector and the scalar potential discretized with loop-star basis functions are related to the hypersingular and the single layer operator (i.e., the well known integral operators from acoustics). For the single layer operator discretized with piecewise constant functions, a hierarchical preconditioner can easily be constructed. Thus the strategy we propose in this work for preconditioning the EFIE is the transformation of the scalar and the vector potential into operators equivalent to the single layer operator and to its inverse. More specifically, when the scalar potential is discretized with star functions as source and testing functions, the resulting matrix is a single layer operator discretized with piecewise constant functions and multiplied left and right with two additional graph Laplacian matrices. By inverting these graph Laplacian matrices, the discretized single layer operator is obtained, which can be preconditioned with the hierarchical basis. Dually, when the vector potential is discretized with loop functions, the resulting matrix can be interpreted as a hypersingular operator discretized with piecewise linear functions. By leveraging on a scalar Calderón identity, we can interpret this operator as spectrally equivalent to the inverse single layer operator. Then we use a linear-in-complexity, closed-form inverse of the dual hierarchical basis to precondition the hypersingular operator. The numerical results show the effectiveness of the proposed preconditioner and the practical impact of theoretical developments in real case scenarios.

Diffusion boundary layers ameliorate the negative effects of ocean acidification on the temperate coralline macroalga Arthrocardia corymbosa.

PubMed

Cornwall, Christopher E; Boyd, Philip W; McGraw, Christina M; Hepburn, Christopher D; Pilditch, Conrad A; Morris, Jaz N; Smith, Abigail M; Hurd, Catriona L

2014-01-01

Anthropogenically-modulated reductions in pH, termed ocean acidification, could pose a major threat to the physiological performance, stocks, and biodiversity of calcifiers and may devalue their ecosystem services. Recent debate has focussed on the need to develop approaches to arrest the potential negative impacts of ocean acidification on ecosystems dominated by calcareous organisms. In this study, we demonstrate the role of a discrete (i.e. diffusion) boundary layer (DBL), formed at the surface of some calcifying species under slow flows, in buffering them from the corrosive effects of low pH seawater. The coralline macroalga Arthrocardia corymbosa was grown in a multifactorial experiment with two mean pH levels (8.05 'ambient' and 7.65 a worst case 'ocean acidification' scenario projected for 2100), each with two levels of seawater flow (fast and slow, i.e. DBL thin or thick). Coralline algae grown under slow flows with thick DBLs (i.e., unstirred with regular replenishment of seawater to their surface) maintained net growth and calcification at pH 7.65 whereas those in higher flows with thin DBLs had net dissolution. Growth under ambient seawater pH (8.05) was not significantly different in thin and thick DBL treatments. No other measured diagnostic (recruit sizes and numbers, photosynthetic metrics, %C, %N, %MgCO3) responded to the effects of reduced seawater pH. Thus, flow conditions that promote the formation of thick DBLs, may enhance the subsistence of calcifiers by creating localised hydrodynamic conditions where metabolic activity ameliorates the negative impacts of ocean acidification.

Multilayer composites and manufacture of same

DOEpatents

Holesinger, Terry G.; Jia, Quanxi

2006-02-07

The present invention is directed towards a process of depositing multilayer thin films, disk-shaped targets for deposition of multilayer thin films by a pulsed laser or pulsed electron beam deposition process, where the disk-shaped targets include at least two segments with differing compositions, and a multilayer thin film structure having alternating layers of a first composition and a second composition, a pair of the alternating layers defining a bi-layer wherein the thin film structure includes at least 20 bi-layers per micron of thin film such that an individual bi-layer has a thickness of less than about 100 nanometers.

The electrical resistivity of rough thin films: A model based on electron reflection at discrete step edges

NASA Astrophysics Data System (ADS)

Zhou, Tianji; Zheng, Pengyuan; Pandey, Sumeet C.; Sundararaman, Ravishankar; Gall, Daniel

2018-04-01

The effect of the surface roughness on the electrical resistivity of metallic thin films is described by electron reflection at discrete step edges. A Landauer formalism for incoherent scattering leads to a parameter-free expression for the resistivity contribution from surface mound-valley undulations that is additive to the resistivity associated with bulk and surface scattering. In the classical limit where the electron reflection probability matches the ratio of the step height h divided by the film thickness d, the additional resistivity Δρ = √{3 /2 } /(g0d) × ω/ξ, where g0 is the specific ballistic conductance and ω/ξ is the ratio of the root-mean-square surface roughness divided by the lateral correlation length of the surface morphology. First-principles non-equilibrium Green's function density functional theory transport simulations on 1-nm-thick Cu(001) layers validate the model, confirming that the electron reflection probability is equal to h/d and that the incoherent formalism matches the coherent scattering simulations for surface step separations ≥2 nm. Experimental confirmation is done using 4.5-52 nm thick epitaxial W(001) layers, where ω = 0.25-1.07 nm and ξ = 10.5-21.9 nm are varied by in situ annealing. Electron transport measurements at 77 and 295 K indicate a linear relationship between Δρ and ω/(ξd), confirming the model predictions. The model suggests a stronger resistivity size effect than predictions of existing models by Fuchs [Math. Proc. Cambridge Philos. Soc. 34, 100 (1938)], Sondheimer [Adv. Phys. 1, 1 (1952)], Rossnagel and Kuan [J. Vac. Sci. Technol., B 22, 240 (2004)], or Namba [Jpn. J. Appl. Phys., Part 1 9, 1326 (1970)]. It provides a quantitative explanation for the empirical parameters in these models and may explain the recently reported deviations of experimental resistivity values from these models.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R.; Lunt, Richard R.

2016-04-05

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R; Lunt, Richard R

2015-01-13

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Nano-crystalline thin and nano-particulate thick TiO{sub 2} layer: Cost effective sequential deposition and study on dye sensitized solar cell characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, P.; Sengupta, D.; CSIR-Central Mechanical Engineering Research Institute, Academy of Scientific and Innovative Research

Highlights: • Thin TiO{sub 2} layer is deposited on conducting substrate using sol–gel based dip coating. • TiO{sub 2} nano-particles are synthesized using hydrothermal route. • Thick TiO{sub 2} particulate layer is deposited on prepared thin layer. • Dye sensitized solar cells are made using thin and thick layer based photo-anode. • Introduction of thin layer in particulate photo-anode improves the cell efficiency. - Abstract: A compact thin TiO{sub 2} passivation layer is introduced between the mesoporous TiO{sub 2} nano-particulate layer and the conducting glass substrate to prepare photo-anode for dye-sensitized solar cell (DSSC). In order to understand the effectmore » of passivation layer, other two DSSCs are also developed separately using TiO{sub 2} nano-particulate and compact thin film based photo-anodes. Nano-particles are prepared using hydrothermal synthesis route and the compact passivation layer is prepared by simply dip coating the precursor sol prepared through wet chemical route. The TiO{sub 2} compact layer and the nano-particles are characterised in terms of their micro-structural features and phase formation behavior. It is found that introduction of a compact TiO{sub 2} layer in between the mesoporous TiO{sub 2} nano-particulate layer and the conducting substrate improves the solar to electric conversion efficiency of the fabricated cell. The dense thin passivation layer is supposed to enhance the photo-excited electron transfer and prevent the recombination of photo-excited electrons.« less

Comparison of vertical discretization techniques in finite-difference models of ground-water flow; example from a hypothetical New England setting

USGS Publications Warehouse

Harte, Philip T.

1994-01-01

Proper discretization of a ground-water-flow field is necessary for the accurate simulation of ground-water flow by models. Although discretiza- tion guidelines are available to ensure numerical stability, current guidelines arc flexible enough (particularly in vertical discretization) to allow for some ambiguity of model results. Testing of two common types of vertical-discretization schemes (horizontal and nonhorizontal-model-layer approach) were done to simulate sloping hydrogeologic units characteristic of New England. Differences of results of model simulations using these two approaches are small. Numerical errors associated with use of nonhorizontal model layers are small (4 percent). even though this discretization technique does not adhere to the strict formulation of the finite-difference method. It was concluded that vertical discretization by means of the nonhorizontal layer approach has advantages in representing the hydrogeologic units tested and in simplicity of model-data input. In addition, vertical distortion of model cells by this approach may improve the representation of shallow flow processes.

An Electrochemical Experiment Using an Optically Transparent Thin Layer Electrode

ERIC Educational Resources Information Center

DeAngelis, Thomas P.; Heineman, William R.

1976-01-01

Describes a unified experiment in which an optically transparent thin layer electrode is used to illustrate the techniques of thin layer electrochemistry, cyclic voltammetry, controlled potential coulometry, and spectroelectrochemistry. (MLH)

Rectenna that converts infrared radiation to electrical energy

DOEpatents

Davids, Paul; Peters, David W.

2016-09-06

Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive layer. A thin insulator layer is formed on the conductive layer, and a nanoantenna is formed on the thin insulator layer. The thin insulator layer acts as a tunnel junction of a tunnel diode.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Discrete element modeling of microstructure of nacre

NASA Astrophysics Data System (ADS)

Chandler, Mei Qiang; Cheng, Jing-Ru C.

2018-04-01

The microstructure of nacre consists of polygon-shaped aragonite mineral tablets bonded by very thin layers of organic materials and is organized in a brick-mortar morphology. In this research, the discrete element method was utilized to model this structure. The aragonite mineral tablets were modeled with three-dimensional polygon particles generated by the Voronoi tessellation method to represent the Voronoi-like patterns of mineral tablets assembly observed in experiments. The organic matrix was modeled with a group of spring elements. The constitutive relations of the spring elements were inspired from the experimental results of organic molecules from the literature. The mineral bridges were modeled with simple elastic bonds with the parameters based on experimental data from the literature. The bulk stress-strain responses from the models agreed well with experimental results. The model results show that the mineral bridges play important roles in providing the stiffness and yield strength for the nacre, while the organic matrix in providing the ductility for the nacre. This work demonstrated the suitability of particle methods for modeling microstructures of nacre.

The threshold strength of laminar ceramics utilizing molar volume changes and porosity

NASA Astrophysics Data System (ADS)

Pontin, Michael Gene

It has been shown that uniformly spaced thin compressive layers within a ceramic body can arrest the propagation of an otherwise catastrophic crack, producing a threshold strength: a strength below which the probability of failure is zero. Previous work has shown that the threshold strength increases with both the magnitude of the compressive stress and the fracture toughness of the thin layer material, and finite element analysis predicts that the threshold strength can be further increased when the elastic modulus of the compressive layer is much smaller than the thicker layer. The current work describes several new approaches to increase the threshold strength of a laminar ceramic system. The initial method utilized a molar volume expansion within the thin layers, produced by the tetragonal-to-monoclinic phase transformation of unstabilized zirconia during cooling, in order to produce large compressive stresses within the thin layers. High threshold strengths were measured for this system, but they remained relatively constant as the zirconia content was increased. It was determined that microcracking produced during the transformation reduced the magnitude of the compressive stresses, but may also have served to reduce the modulus of the thin compressive layer, providing an additional strengthening mechanism. The second approach studied the addition of porosity to reduce the elastic modulus of the thin compressive layers. A new processing method was created and analyzed, in which thick layers of the laminate were fabricated by tape-casting, and then dip-coated into a slurry, containing rice starch, to create thin porous compressive layers upon densification. The effects of porosity on the residual compressive stress, elastic modulus, and fracture toughness of the thin layers were measured and calculated, and it was found that the elastic modulus mismatch between the thin and thick layers produced a large strengthening effect for volume fractions of porosity below a critical level. Specimens with greater volume fractions of porosity exhibited complete crack arrest, typically followed by non-catastrophic failure, as cracks initiating in adjacent thick layers coalesced by cracking or delamination along the thin porous layers.

Characterization of Cu buffer layers for growth of L10-FeNi thin films

NASA Astrophysics Data System (ADS)

Mizuguchi, M.; Sekiya, S.; Takanashi, K.

2010-05-01

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L10-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L10-FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L10-FeNi thin films.

Ceramic Composite Thin Films

NASA Technical Reports Server (NTRS)

Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Thin-layer voltammetry of soluble species on screen-printed electrodes: proof of concept.

PubMed

Botasini, S; Martí, A C; Méndez, E

2016-10-17

Thin-layer diffusion conditions were accomplished on screen-printed electrodes by placing a controlled-weight onto the cast solution and allowing for its natural spreading. The restricted diffusive conditions were assessed by cyclic voltammetry at low voltage scan rates and electrochemical impedance spectroscopy. The relationship between the weight exerted over the drop and the thin-layer thickness achieved was determined, in such a way that the simple experimental set-up designed for this work could be developed into a commercial device with variable control of the thin-layer conditions. The experimental results obtained resemble those reported for the voltammetric features of electroactive soluble species employing electrodes modified with carbon nanotubes or graphene layers, suggesting that the attainment of the benefits reported for these nanomaterials could be done simply by forcing the solution to spread over the screen-printed electrodic system to form a thin layer solution. The advantages of thin-layer voltammetry in the kinetic characterization of quasi-reversible and irreversible processes are highlighted.

A model for thin layer formation by delayed particle settling at sharp density gradients

NASA Astrophysics Data System (ADS)

Prairie, Jennifer C.; White, Brian L.

2017-02-01

Thin layers - regions where plankton or particles accumulate vertically on scales of a few meters or less - are common in coastal waters, and have important implications for both trophic dynamics and carbon cycling. These features can form by a variety of biological and physical mechanisms, including localized growth, shear-thinning, and directed swimming. An additional mechanism may result in the formation of thin layers of marine aggregates, which have been shown to decrease their settling velocity when passing through sharp density gradients, a behavior termed delayed settling. Here, we apply a simple vertical advection-diffusion model to predict the properties of aggregate thin layers formed by this process. We assume a constant vertical flux of particles from the surface, which is parameterized by observations from laboratory experiments with marine aggregates. The formation, maintenance, and shape of the layers are described in relation to non-dimensional numbers that depend on environmental conditions and particle settling properties. In particular, model results demonstrate layer intensity and sharpness both increase with higher Péclet number (Pe), that is, under conditions with weaker mixing relative to layer formation. Similarly, more intense and sharper layers are found when the delayed settling behavior of aggregates is characterized by a lower velocity minimum. The model also predicts layers that are vertically asymmetric and highly "peaky" when compared with a Gaussian distribution, features often seen in thin layers in natural environments. Lastly, by comparing model predictions with observations of thin layers in the field, we are able to gain some insight into the applicability of delayed settling as a thin layer formation mechanism in different environmental conditions.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Room temperature rubbing for few-layer two-dimensional thin flakes directly on flexible polymer substrates

PubMed Central

Yu, Yan; Jiang, Shenglin; Zhou, Wenli; Miao, Xiangshui; Zeng, Yike; Zhang, Guangzu; Liu, Sisi

2013-01-01

The functional layers of few-layer two-dimensional (2-D) thin flakes on flexible polymers for stretchable applications have attracted much interest. However, most fabrication methods are “indirect” processes that require transfer steps. Moreover, previously reported “transfer-free” methods are only suitable for graphene and not for other few-layer 2-D thin flakes. Here, a friction based room temperature rubbing method is proposed for fabricating different types of few-layer 2-D thin flakes (graphene, hexagonal boron nitride (h-BN), molybdenum disulphide (MoS2), and tungsten disulphide (WS2)) on flexible polymer substrates. Commercial 2-D raw materials (graphite, h-BN, MoS2, and WS2) that contain thousands of atom layers were used. After several minutes, different types of few-layer 2-D thin flakes were fabricated directly on the flexible polymer substrates by rubbing procedures at room temperature and without any transfer step. These few-layer 2-D thin flakes strongly adhere to the flexible polymer substrates. This strong adhesion is beneficial for future applications. PMID:24045289

A more accurate scheme for calculating Earth's skin temperature

NASA Astrophysics Data System (ADS)

Tsuang, Ben-Jei; Tu, Chia-Ying; Tsai, Jeng-Lin; Dracup, John A.; Arpe, Klaus; Meyers, Tilden

2009-02-01

The theoretical framework of the vertical discretization of a ground column for calculating Earth’s skin temperature is presented. The suggested discretization is derived from the evenly heat-content discretization with the optimal effective thickness for layer-temperature simulation. For the same level number, the suggested discretization is more accurate in skin temperature as well as surface ground heat flux simulations than those used in some state-of-the-art models. A proposed scheme (“op(3,2,0)”) can reduce the normalized root-mean-square error (or RMSE/STD ratio) of the calculated surface ground heat flux of a cropland site significantly to 2% (or 0.9 W m-2), from 11% (or 5 W m-2) by a 5-layer scheme used in ECMWF, from 19% (or 8 W m-2) by a 5-layer scheme used in ECHAM, and from 74% (or 32 W m-2) by a single-layer scheme used in the UCLA GCM. Better accuracy can be achieved by including more layers to the vertical discretization. Similar improvements are expected for other locations with different land types since the numerical error is inherited into the models for all the land types. The proposed scheme can be easily implemented into state-of-the-art climate models for the temperature simulation of snow, ice and soil.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

NASA Astrophysics Data System (ADS)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

A Numerical Investigation of the Extinction of Low Strain Rate Diffusion Flames by an Agent in Microgravity

NASA Technical Reports Server (NTRS)

Puri, Ishwar K.

2004-01-01

Our goal has been to investigate the influence of both dilution and radiation on the extinction process of nonpremixed flames at low strain rates. Simulations have been performed by using a counterflow code and three radiation models have been included in it, namely, the optically thin, the narrowband, and discrete ordinate models. The counterflow flame code OPPDIFF was modified to account for heat transfer losses by radiation from the hot gases. The discrete ordinate method (DOM) approximation was first suggested by Chandrasekhar for solving problems in interstellar atmospheres. Carlson and Lathrop developed the method for solving multi-dimensional problem in neutron transport. Only recently has the method received attention in the field of heat transfer. Due to the applicability of the discrete ordinate method for thermal radiation problems involving flames, the narrowband code RADCAL was modified to calculate the radiative properties of the gases. A non-premixed counterflow flame was simulated with the discrete ordinate method for radiative emissions. In comparison with two other models, it was found that the heat losses were comparable with the optically thin and simple narrowband model. The optically thin model had the highest heat losses followed by the DOM model and the narrow-band model.

Nonenzymatic detection of glucose using BaCuO2 thin layer

NASA Astrophysics Data System (ADS)

Ito, Takeshi; Asada, Tsuyoshi; Asai, Naoto; Shimizu, Tomohiro; Shingubara, Shoso

2017-01-01

A BaCuO2 thin layer was deposited on a glassy carbon electrode and used for the direct oxidation of glucose. The crystalline, electrochemical, and physicochemical properties that depend on the deposition temperature and deposition time were studied. X-ray diffraction (XRD) analysis showed that the thin layer was amorphous even at 400 °C. The current density of the glucose oxidation using the thin layer deposited at 200 °C was higher than those at other deposition temperatures. Under this condition, the current density increased with the glucose concentration and deposition time. These results indicate that a BaCuO2 thin layer has potential for measuring the blood glucose level without enzymes.

Methods for making thin layers of crystalline materials

DOEpatents

Lagally, Max G; Paskiewicz, Deborah M; Tanto, Boy

2013-07-23

Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.

Collective mechanical behavior of multilayer colloidal arrays of hollow nanoparticles.

PubMed

Yin, Jie; Retsch, Markus; Thomas, Edwin L; Boyce, Mary C

2012-04-03

The collective mechanical behavior of multilayer colloidal arrays of hollow silica nanoparticles (HSNP) is explored under spherical nanoindentation through a combination of experimental, numerical, and theoretical approaches. The effective indentation modulus E(ind) is found to decrease with an increasing number of layers in a nonlinear manner. The indentation force versus penetration depth behavior for multilayer hollow particle arrays is predicted by an approximate analytical model based on the spring stiffness of the individual particles and the multipoint, multiparticle interactions as well as force transmission between the layers. The model is in good agreement with experiments and with detailed finite element simulations. The ability to tune the effective indentation modulus, E(ind), of the multilayer arrays by manipulating particle geometry and layering is revealed through the model, where E(ind) = (0.725m(-3/2) + 0.275)E(mon) and E(mon) is the monolayer modulus and m is number of layers. E(ind) is seen to plateau with increasing m to E(ind_plateau) = 0.275E(mon) and E(mon) scales with (t/R)(2), t being the particle shell thickness and R being the particle radius. The scaling law governing the nonlinear decrease in indentation modulus with an increase in layer number (E(ind) scaling with m(-3/2)) is found to be similar to that governing the indentation modulus of thin solid films E(ind_solid) on a stiff substrate (where E(ind_solid) scales with h(-1.4) and also decreases until reaching a plateau value) which also decreases with an increase in film thickness h. However, the mechanisms underlying this trend for the colloidal array are clearly different, where discrete particle-to-particle interactions govern the colloidal array behavior in contrast to the substrate constraint on deformation, which governs the thickness dependence of the continuous thin film indentation modulus.

Discrete Roughness Transition for Hypersonic Flight Vehicles

NASA Technical Reports Server (NTRS)

Berry, Scott A.; Horvath, Thomas J.

2007-01-01

The importance of discrete roughness and the correlations developed to predict the onset of boundary layer transition on hypersonic flight vehicles are discussed. The paper is organized by hypersonic vehicle applications characterized in a general sense by the boundary layer: slender with hypersonic conditions at the edge of the boundary layer, moderately blunt with supersonic, and blunt with subsonic. This paper is intended to be a review of recent discrete roughness transition work completed at NASA Langley Research Center in support of agency flight test programs. First, a review is provided of discrete roughness wind tunnel data and the resulting correlations that were developed. Then, results obtained from flight vehicles, in particular the recently flown Hyper-X and Shuttle missions, are discussed and compared to the ground-based correlations.

Statistically Based Morphodynamic Modeling of Tracer Slowdown

NASA Astrophysics Data System (ADS)

Borhani, S.; Ghasemi, A.; Hill, K. M.; Viparelli, E.

2017-12-01

Tracer particles are used to study bedload transport in gravel-bed rivers. One of the advantages associated with using of tracer particles is that they allow for direct measures of the entrainment rates and their size distributions. The main issue in large scale studies with tracer particles is the difference between tracer stone short term and long term behavior. This difference is due to the fact that particles undergo vertical mixing or move to less active locations such as bars or even floodplains. For these reasons the average virtual velocity of tracer particle decreases in time, i.e. the tracer slowdown. In summary, tracer slowdown can have a significant impact on the estimation of bedload transport rate or long term dispersal of contaminated sediment. The vast majority of the morphodynamic models that account for the non-uniformity of the bed material (tracer and not tracer, in this case) are based on a discrete description of the alluvial deposit. The deposit is divided in two different regions; the active layer and the substrate. The active layer is a thin layer in the topmost part of the deposit whose particles can interact with the bed material transport. The substrate is the part of the deposit below the active layer. Due to the discrete representation of the alluvial deposit, active layer models are not able to reproduce tracer slowdown. In this study we try to model the slowdown of tracer particles with the continuous Parker-Paola-Leclair morphodynamic framework. This continuous, i.e. not layer-based, framework is based on a stochastic description of the temporal variation of bed surface elevation, and of the elevation specific particle entrainment and deposition. Particle entrainment rates are computed as a function of the flow and sediment characteristics, while particle deposition is estimated with a step length formulation. Here we present one of the first implementation of the continuum framework at laboratory scale, its validation against laboratory data and then we attempt to use the validated model to describe the tracer long-term slowdown.

Improvement in temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films using Ba(Mg1/3Ta2/3)O3 buffer layer

NASA Astrophysics Data System (ADS)

Wu, Zhi; Zhou, Jing; Chen, Wen; Shen, Jie; Yang, Huimin; Zhang, Shisai; Liu, Yueli

2016-12-01

In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared via sol-gel method. The effects of Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer on the temperature dependence and dielectric tunability properties of PZT thin films were studied. As the thickness of BMT buffer layer increases, the tan δ and tunability of PZT thin films decrease while tunability still maintains above 10%. This result shows that BMT buffer layer can improve the dielectric tunability properties of PZT thin films. Furthermore, the temperature coefficient of the dielectric constant decreases from 2333.4 to 906.9 ppm/°C with the thickness of BMT buffer layer increasing in the range from 25 to 205 °C, indicating that BMT buffer layer can improve the temperature stability of PZT thin films. Therefore, BMT buffer layer plays a critical role in improving temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films.

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

PubMed Central

Liao, Yu-Kuang; Liu, Yung-Tsung; Hsieh, Dan-Hua; Shen, Tien-Lin; Hsieh, Ming-Yang; Tzou, An-Jye; Chen, Shih-Chen; Tsai, Yu-Lin; Lin, Wei-Sheng; Chan, Sheng-Wen; Shen, Yen-Ping; Cheng, Shun-Jen; Chen, Chyong-Hua; Wu, Kaung-Hsiung; Chen, Hao-Ming; Kuo, Shou-Yi; Charlton, Martin D. B.; Hsieh, Tung-Po; Kuo, Hao-Chung

2017-01-01

Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase. PMID:28383488

Layer-by-Layer Assembly of a pH-Responsive and Electrochromic Thin Film

ERIC Educational Resources Information Center

Schmidt, Daniel J.; Pridgen, Eric M.; Hammond, Paula T.; Love, J. Christopher

2010-01-01

This article summarizes an experiment on thin-film fabrication with layer-by-layer assembly that is appropriate for undergraduate laboratory courses. The purpose of this experiment is to teach students about self-assembly in the context of thin films and to expose students to the concepts of functional polymeric coatings. Students dip coat…

Gyrotactic trapping: A numerical study

NASA Astrophysics Data System (ADS)

Ghorai, S.

2016-04-01

Gyrotactic trapping is a mechanism proposed by Durham et al. ["Disruption of vertical motility by shear triggers formation of thin Phytoplankton layers," Science 323, 1067-1070 (2009)] to explain the formation of thin phytoplankton layer just below the ocean surface. This mechanism is examined numerically using a rational model based on the generalized Taylor dispersion theory. The crucial role of sedimentation speed in the thin layer formation is demonstrated. The effects of variation in different parameters on the thin layer formation are also investigated.

[High performance thin-layer chromatography in specific blood diagnosis (author's transl)].

PubMed

Bernardelli, B; Masotti, G

1976-01-01

Furthering their research into the differentiation of various haemoglobins (both human and animal) with the use of thin layer chromatographic methods, the Authors have applied Kaiser's high performance thin layer chromatography (HPTLC) to the specific diagnosis of blood. Although the method was superior to ascending one-dimensional thin layer chromatography for its sensitivity, Rf reproducibility and much briefer migration times, it did not turn out to be suitable for application to the specific requirements of forensic haematology.

Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

DOEpatents

Hawkins, G.A.; Clarke, J.

1975-10-31

A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition.

PubMed

Liang, Junsheng; Li, Pengfei; Wang, Dazhi; Fang, Xu; Ding, Jiahong; Wu, Junxiong; Tang, Chang

2016-01-19

Dense and crack-free barium titanate (BaTiO₃, BTO) thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet) deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.

Performance enhancement in Sb doped Cu(InGa)Se2 thin film solar cell by e-beam evaporation

NASA Astrophysics Data System (ADS)

Chen, Jieyi; Shen, Honglie; Zhai, Zihao; Li, Yufang; Yi, Yunge

2018-03-01

To investigate the effects of Sb doping on the structural and electrical properties of Cu(InGa)Se2 (CIGS) thin films and solar cells, CIGS thin films, prepared by e-beam evaporation on soda-lime glass, were doped with lower and upper Sb layers in the precursor stacks respectively. Change of structure and introduction of stress were observed in the CIGS thin films with upper Sb layer in stack through XRD and Raman measurement. Both crystalline quality and compactness of CIGS thin films were improved by the doping of upper Sb layer in stack and the CIGS thin film showed an optimal structural property with 20 nm Sb layer. Movement of Fermi level of the surface of CIGS thin film after doping of upper Sb layer in stack and electrons transfer between Cu/Cu+ redox couple and CIGS thin films, which provided probability for the substitution of Sb for Cu sites at the surface of CIGS thin films, were proposed to explain the migration of Cu from the surface to the bulk of CIGS thin films. The larger barrier at the CIGS/CdS interface after doping of upper Sb layer in stack made contribution to the increase of VOC of CIGS solar cells. The efficiency of CIGS solar cell was improved from 3.3% to 7.2% after doping with 20 nm upper Sb. Compared to the CIGS solar cell with lower Sb layer in stack, in which an additional Cu2-xSe phase was found, the CIGS solar cell with upper Sb layer in stack possessed a higher efficiency.

Evaluation of double-layer density modulated Si thin films as Li-ion battery anodes

NASA Astrophysics Data System (ADS)

Taha Demirkan, Muhammed; Yurukcu, Mesut; Dursun, Burcu; Demir-Cakan, Rezan; Karabacak, Tansel

2017-10-01

Double-layer density modulated silicon thin films which contain alternating low and high density Si film layers were fabricated by magnetron sputtering. Two different samples consisting of alternating layers of high-density/low-density and low-density/high-density Si thin film layers were investigated as anode electrodes in Li-ion batteries. Si thin film in which the terminating layer at the top is low density Si layer-quoted as low-density/high-density film (LD/HD)- exhibits better performance than Si thin film that has high density layer at the top, -quoted as high-density/low-density (HD/LD). A highly stabilized cycling performance with the specific charge capacities of 2000 mAh g-1 at the 150th cycle at C/2 current density, and 1200 mAh g-1 at the 240th cycle at 10 C current density were observed for the LD/HD Si anode in the presence of fluoroethylene carbonate (FEC) electrolyte additive.

Geometric Nonlinear Computation of Thin Rods and Shells

NASA Astrophysics Data System (ADS)

Grinspun, Eitan

2011-03-01

We develop simple, fast numerical codes for the dynamics of thin elastic rods and shells, by exploiting the connection between physics, geometry, and computation. By building a discrete mechanical picture from the ground up, mimicking the axioms, structures, and symmetries of the smooth setting, we produce numerical codes that not only are consistent in a classical sense, but also reproduce qualitative, characteristic behavior of a physical system----such as exact preservation of conservation laws----even for very coarse discretizations. As two recent examples, we present discrete computational models of elastic rods and shells, with straightforward extensions to the viscous setting. Even at coarse discretizations, the resulting simulations capture characteristic geometric instabilities. The numerical codes we describe are used in experimental mechanics, cinema, and consumer software products. This is joint work with Miklós Bergou, Basile Audoly, Max Wardetzky, and Etienne Vouga. This research is supported in part by the Sloan Foundation, the NSF, Adobe, Autodesk, Intel, the Walt Disney Company, and Weta Digital.

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.; Sheldon, Peter; Rose, Douglas H.

1999-01-01

A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

Amplitude various angles (AVA) phenomena in thin layer reservoir: Case study of various reservoirs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurhandoko, Bagus Endar B., E-mail: bagusnur@bdg.centrin.net.id, E-mail: bagusnur@rock-fluid.com; Rock Fluid Imaging Lab., Bandung; Susilowati, E-mail: bagusnur@bdg.centrin.net.id, E-mail: bagusnur@rock-fluid.com

2015-04-16

Amplitude various offset is widely used in petroleum exploration as well as in petroleum development field. Generally, phenomenon of amplitude in various angles assumes reservoir’s layer is quite thick. It also means that the wave is assumed as a very high frequency. But, in natural condition, the seismic wave is band limited and has quite low frequency. Therefore, topic about amplitude various angles in thin layer reservoir as well as low frequency assumption is important to be considered. Thin layer reservoir means the thickness of reservoir is about or less than quarter of wavelength. In this paper, I studied aboutmore » the reflection phenomena in elastic wave which considering interference from thin layer reservoir and transmission wave. I applied Zoeppritz equation for modeling reflected wave of top reservoir, reflected wave of bottom reservoir, and also transmission elastic wave of reservoir. Results show that the phenomena of AVA in thin layer reservoir are frequency dependent. Thin layer reservoir causes interference between reflected wave of top reservoir and reflected wave of bottom reservoir. These phenomena are frequently neglected, however, in real practices. Even though, the impact of inattention in interference phenomena caused by thin layer in AVA may cause inaccurate reservoir characterization. The relation between classes of AVA reservoir and reservoir’s character are different when effect of ones in thin reservoir and ones in thick reservoir are compared. In this paper, I present some AVA phenomena including its cross plot in various thin reservoir types based on some rock physics data of Indonesia.« less

Coupled DDD-FEM modeling on the mechanical behavior of microlayered metallic multilayer film at elevated temperature

NASA Astrophysics Data System (ADS)

Huang, Minsheng; Li, Zhenhuan

2015-12-01

To investigate the mechanical behavior of the microlayered metallic thin films (MMMFs) at elevated temperature, an enhanced discrete-continuous model (DCM), which couples rather than superposes the two-dimensional climb/glide-enabled discrete dislocation dynamics (2D-DDD) with the linearly elastic finite element method (FEM), is developed in this study. In the present coupling scheme, two especial treatments are made. One is to solve how the plastic strain captured by the DDD module is transferred properly to the FEM module as an eigen-strain; the other is to answer how the stress field computationally obtained by the FEM module is transferred accurately to the DDD module to drive those discrete dislocations moving correctly. With these two especial treatments, the interactions between adjacent dislocations and between dislocation pile-ups and inter-phase boundaries (IBs), which are crucial to the strengthening effect in MMMFs, are carefully taken into account. After verified by comparing the computationally predicted results with the theoretical solutions for a dislocation residing in a homogeneous material and nearby a bi-material interface, this 2D-DDD/FEM coupling scheme is used to model the tensile mechanical behaviors of MMMFs at elevated temperature. The strengthening mechanism of MMMFs and the layer thickness effect are studied in detail, with special attentions to the influence of dislocation climb on them.

Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

DOEpatents

Ruffner, Judith A.; Bullington, Jeff A.; Clem, Paul G.; Warren, William L.; Brinker, C. Jeffrey; Tuttle, Bruce A.; Schwartz, Robert W.

1999-01-01

A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

Conduction mechanism of leakage current due to the traps in ZrO2 thin film

NASA Astrophysics Data System (ADS)

Seo, Yohan; Lee, Sangyouk; An, Ilsin; Song, Chulgi; Jeong, Heejun

2009-11-01

In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current-voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5-5.0 MV cm-1) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8-1.5 MV cm-1). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV.

Integrated waveguide and nanostructured sensor platform for surface-enhanced Raman spectroscopy

NASA Astrophysics Data System (ADS)

Pearce, Stuart J.; Pollard, Michael E.; Oo, SweZin; Chen, Ruiqi; Kalsi, Sumit; Charlton, Martin D. B.

2014-01-01

Limitations of current sensors include large dimensions, sometimes limited sensitivity and inherent single-parameter measurement capability. Surface-enhanced Raman spectroscopy can be utilized for environment and pharmaceutical applications with the intensity of the Raman scattering enhanced by a factor of 10. By fabricating and characterizing an integrated optical waveguide beneath a nanostructured precious metal coated surface a new surface-enhanced Raman spectroscopy sensing arrangement can be achieved. Nanostructured sensors can provide both multiparameter and high-resolution sensing. Using the slab waveguide core to interrogate the nanostructures at the base allows for the emission to reach discrete sensing areas effectively and should provide ideal parameters for maximum Raman interactions. Thin slab waveguide films of silicon oxynitride were etched and gold coated to create localized nanostructured sensing areas of various pitch, diameter, and shape. These were interrogated using a Ti:Sapphire laser tuned to 785-nm end coupled into the slab waveguide. The nanostructured sensors vertically projected a Raman signal, which was used to actively detect a thin layer of benzyl mercaptan attached to the sensors.

Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films

NASA Astrophysics Data System (ADS)

Khamseh, S.; Araghi, H.; Ghahari, M.; Faghihi Sani, M. A.

2016-03-01

W-doped VO2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VOX-WOX-VOX ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO2 (M) and VO2 (B) was formed in VOX-WOX-VOX ceramic thin films. Tungsten content of VOX-WOX-VOX ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance ( R sq) of VOX-WOX-VOX ceramic thin films increased from 65 to 86 kΩ/sq. The VOX-WOX-VOX ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness.

Competing disturbance amplification mechanisms in two-fluid boundary layers

NASA Astrophysics Data System (ADS)

Saha, Sandeep; Page, Jacob; Zaki, Tamer

2015-11-01

The linear stability of boundary layers above a thin wall film of lower viscosity is analyzed. Appropriate choice of the film thickness and viscosity excludes the possibility of interfacial instabilities. Transient amplification of disturbances is therefore the relevant destabilizing influence, and can take place via three different mechanisms in the two-fluid configuration. Each is examined in detail by solving an initial value problem whose initial condition comprises a pair of appropriately chosen eigenmodes from the discrete, continuous and interface modes. Two regimes are driven by the lift-up mechanism: (i) The response to a streamwise vortex and (ii) the normal vorticity generated by a stable Tollmien-Schlichting wave. Both are damped due to the film. The third regime is associated with the wall-normal vorticity that is generated by the interface displacement. It can lead to appreciable streamwise velocity disturbances in the near-wall region at relatively low viscosity ratios. The results demonstrate that a wall film can stabilize the early linear stages of boundary-layer transition, and explain the observations from the recent nonlinear direct numerical simulations of this configuration by Jung & Zaki (J. Fluid Mech., vol 772, 2015, 330-360).

Registration of segmented histological images using thin plate splines and belief propagation

NASA Astrophysics Data System (ADS)

Kybic, Jan

2014-03-01

We register images based on their multiclass segmentations, for cases when correspondence of local features cannot be established. A discrete mutual information is used as a similarity criterion. It is evaluated at a sparse set of location on the interfaces between classes. A thin-plate spline regularization is approximated by pairwise interactions. The problem is cast into a discrete setting and solved efficiently by belief propagation. Further speedup and robustness is provided by a multiresolution framework. Preliminary experiments suggest that our method can provide similar registration quality to standard methods at a fraction of the computational cost.

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Mikula, Vilem (Inventor)

2017-01-01

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

DOEpatents

Repins, Ingrid L.; Kuciauskas, Darius

2015-07-07

A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akselrod, Gleb M.; Bawendi, Moungi G.; Bulovic, Vladimir

Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.

Advanced germanium layer transfer for ultra thin body on insulator structure

NASA Astrophysics Data System (ADS)

Maeda, Tatsuro; Chang, Wen-Hsin; Irisawa, Toshifumi; Ishii, Hiroyuki; Hattori, Hiroyuki; Poborchii, Vladimir; Kurashima, Yuuichi; Takagi, Hideki; Uchida, Noriyuki

2016-12-01

We present the HEtero-Layer Lift-Off (HELLO) technique to obtain ultra thin body (UTB) Ge on insulator (GeOI) substrates. The transferred ultra thin Ge layers are characterized by the Raman spectroscopy measurements down to the thickness of ˜1 nm, observing a strong Raman intensity enhancement for high quality GeOI structure in ultra thin regime due to quantum size effect. This advanced Ge layer transfer technique enabled us to demonstrate UTB-GeOI nMOSFETs with the body thickness of only 4 nm.

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

1999-07-13

A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

Layered Organization in the Coastal Ocean: 4-D Assessment of Thin Layer Structure, Dynamics and Impacts

DTIC Science & Technology

2009-09-30

maintenance and dissipation of layers; (2) to understand the spatial coherence and spatial properties of thin layers in the coastal ocean (especially in...ORCAS profilers at K1 South and K2 had a Nortek ADV (Acoustic Doppler Velocity meter) for simultaneously measuring centimeter- scale currents and...year will be used to (1) detect the presence, intensity, thickness, temporal persistence, and spatial coherence of thin optical and acoustical layers

Effect of the surface charge discretization on electric double layers: a Monte Carlo simulation study.

PubMed

Madurga, Sergio; Martín-Molina, Alberto; Vilaseca, Eudald; Mas, Francesc; Quesada-Pérez, Manuel

2007-06-21

The structure of the electric double layer in contact with discrete and continuously charged planar surfaces is studied within the framework of the primitive model through Monte Carlo simulations. Three different discretization models are considered together with the case of uniform distribution. The effect of discreteness is analyzed in terms of charge density profiles. For point surface groups, a complete equivalence with the situation of uniformly distributed charge is found if profiles are exclusively analyzed as a function of the distance to the charged surface. However, some differences are observed moving parallel to the surface. Significant discrepancies with approaches that do not account for discreteness are reported if charge sites of finite size placed on the surface are considered.

Advanced biomaterial strategies to transplant preformed micro-tissue engineered neural networks into the brain

NASA Astrophysics Data System (ADS)

Harris, J. P.; Struzyna, L. A.; Murphy, P. L.; Adewole, D. O.; Kuo, E.; Cullen, D. K.

2016-02-01

Objective. Connectome disruption is a hallmark of many neurological diseases and trauma with no current strategies to restore lost long-distance axonal pathways in the brain. We are creating transplantable micro-tissue engineered neural networks (micro-TENNs), which are preformed constructs consisting of embedded neurons and long axonal tracts to integrate with the nervous system to physically reconstitute lost axonal pathways. Approach. We advanced micro-tissue engineering techniques to generate micro-TENNs consisting of discrete populations of mature primary cerebral cortical neurons spanned by long axonal fascicles encased in miniature hydrogel micro-columns. Further, we improved the biomaterial encasement scheme by adding a thin layer of low viscosity carboxymethylcellulose (CMC) to enable needle-less insertion and rapid softening for mechanical similarity with brain tissue. Main results. The engineered architecture of cortical micro-TENNs facilitated robust neuronal viability and axonal cytoarchitecture to at least 22 days in vitro. Micro-TENNs displayed discrete neuronal populations spanned by long axonal fasciculation throughout the core, thus mimicking the general systems-level anatomy of gray matter—white matter in the brain. Additionally, micro-columns with thin CMC-coating upon mild dehydration were able to withstand a force of 893 ± 457 mN before buckling, whereas a solid agarose cylinder of similar dimensions was predicted to withstand less than 150 μN of force. This thin CMC coating increased the stiffness by three orders of magnitude, enabling needle-less insertion into brain while significantly reducing the footprint of previous needle-based delivery methods to minimize insertion trauma. Significance. Our novel micro-TENNs are the first strategy designed for minimally invasive implantation to facilitate nervous system repair by simultaneously providing neuronal replacement and physical reconstruction of long-distance axon pathways in the brain. The micro-TENN approach may offer the ability to treat several disorders that disrupt the connectome, including Parkinson’s disease, traumatic brain injury, stroke, and brain tumor excision.

Advanced biomaterial strategies to transplant preformed micro-tissue engineered neural networks into the brain

PubMed Central

Harris, J P; Struzyna, L A; Murphy, P L; Adewole, D O; Kuo, E; Cullen, D K

2017-01-01

Objective Connectome disruption is a hallmark of many neurological diseases and trauma with no current strategies to restore lost long-distance axonal pathways in the brain. We are creating transplantable micro-tissue engineered neural networks (micro-TENNs), which are preformed constructs consisting of embedded neurons and long axonal tracts to integrate with the nervous system to physically reconstitute lost axonal pathways. Approach We advanced micro-tissue engineering techniques to generate micro-TENNs consisting of discrete populations of mature primary cerebral cortical neurons spanned by long axonal fascicles encased in miniature hydrogel micro-columns. Further, we improved the biomaterial encasement scheme by adding a thin layer of low viscosity carboxymethylcellulose (CMC) to enable needle-less insertion and rapid softening for mechanical similarity with brain tissue. Main results The engineered architecture of cortical micro-TENNs facilitated robust neuronal viability and axonal cytoarchitecture to at least 22 days in vitro. Micro-TENNs displayed discrete neuronal populations spanned by long axonal fasciculation throughout the core, thus mimicking the general systems-level anatomy of gray matter—white matter in the brain. Additionally, micro columns with thin CMC-coating upon mild dehydration were able to withstand a force of 893 ± 457 mN before buckling, whereas a solid agarose cylinder of similar dimensions was predicted to withstand less than 150 μN of force. This thin CMC coating increased the stiffness by three orders of magnitude, enabling needle-less insertion into brain while significantly reducing the footprint of previous needle-based delivery methods to minimize insertion trauma. Significance Our novel micro-TENNs are the first strategy designed for minimally invasive implantation to facilitate nervous system repair by simultaneously providing neuronal replacement and physical reconstruction of long-distance axon pathways in the brain. The micro-TENN approach may offer the ability to treat several disorders that disrupt the connectome, including Parkinson’s disease, traumatic brain injury, stroke, and brain tumor excision PMID:26760138

A tri-layer thin film containing graphene oxide to protect zinc substrates from wear

NASA Astrophysics Data System (ADS)

Wang, Ying; Gu, Zhengpeng; Yuan, Ningyi; Chu, Fuqiang; Cheng, Guanggui; Ding, Jianning

2018-06-01

Due to its excellent properties, Zn alloy is widely used in daily life. However, the poor wear-resisting properties of Zn alloys limits their application. In this paper, a tri-layer thin film consisting of 3-aminopropyltriethoxysilane (APS), graphene oxide (GO) and perfluoropolyethers (PFPE) were successfully prepared on the surface of Zn alloy to improve the wear-resisting properties. The as-prepared tri-layer thin films were characterized by atomic force microscopy, Raman spectroscopy, x-ray photoelectron spectroscopy and contact angle measurement. In addition, the tribological properties of the as-prepared tri-layer thin films were studied on a ball-on-plate tribometer and the morphologies of worn surfaces were observed using 3D noncontact interferometric microscope. Compared with the control samples, the tri-layer thin films showed excellent friction-reducing and wear-resisting properties, which was attributed to the synergistic effect of the GO as the load-carrying layer and the PFPE as the lubricating layer.

Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition

PubMed Central

Liang, Junsheng; Li, Pengfei; Wang, Dazhi; Fang, Xu; Ding, Jiahong; Wu, Junxiong; Tang, Chang

2016-01-01

Dense and crack-free barium titanate (BaTiO3, BTO) thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet) deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film. PMID:28787860

MultiLayer solid electrolyte for lithium thin film batteries

DOEpatents

Lee, Se -Hee; Tracy, C. Edwin; Pitts, John Roland; Liu, Ping

2015-07-28

A lithium metal thin-film battery composite structure is provided that includes a combination of a thin, stable, solid electrolyte layer [18] such as Lipon, designed in use to be in contact with a lithium metal anode layer; and a rapid-deposit solid electrolyte layer [16] such as LiAlF.sub.4 in contact with the thin, stable, solid electrolyte layer [18]. Batteries made up of or containing these structures are more efficient to produce than other lithium metal batteries that use only a single solid electrolyte. They are also more resistant to stress and strain than batteries made using layers of only the stable, solid electrolyte materials. Furthermore, lithium anode batteries as disclosed herein are useful as rechargeable batteries.

Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors.

PubMed

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Chi-Lun; Li, Pei-Jou; Houng, Mau-Phon; Yang, Cheng-Fu

2016-02-25

In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al₂O₃ and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value.

Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors

PubMed Central

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Chi-Lun; Li, Pei-Jou; Houng, Mau-Phon; Yang, Cheng-Fu

2016-01-01

In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al2O3 and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value. PMID:28344296

Monitoring the layer-by-layer self-assembly of graphene and graphene oxide by spectroscopic ellipsometry.

PubMed

Zhou, Kai-Ge; Chang, Meng-Jie; Wang, Hang-Xing; Xie, Yu-Long; Zhang, Hao-Li

2012-01-01

Thin films of graphene oxide, graphene and copper (II) phthalocyanine dye have been successfully fabricated by electrostatic layer-by-layer (LbL) assembly approach. We present the first variable angle spectroscopic ellipsometry (VASE) investigation on these graphene-dye hybrid thin films. The thickness evaluation suggested that our LbL assembly process produces highly uniform and reproducible thin films. We demonstrate that the refractive indices of the graphene-dye thin films undergo dramatic variation in the range close to the absorption of the dyes. This investigation provides new insight to the optical properties of graphene containing thin films and shall help to establish an appropriate optical model for graphene-based hybrid materials.

Amine Enrichment of Thin-Film Composite Membranes via Low Pressure Plasma Polymerization for Antimicrobial Adhesion.

PubMed

Reis, Rackel; Dumée, Ludovic F; He, Li; She, Fenghua; Orbell, John D; Winther-Jensen, Bjorn; Duke, Mikel C

2015-07-15

Thin-film composite membranes, primarily based on poly(amide) (PA) semipermeable materials, are nowadays the dominant technology used in pressure driven water desalination systems. Despite offering superior water permeation and salt selectivity, their surface properties, such as their charge and roughness, cannot be extensively tuned due to the intrinsic fabrication process of the membranes by interfacial polymerization. The alteration of these properties would lead to a better control of the materials surface zeta potential, which is critical to finely tune selectivity and enhance the membrane materials stability when exposed to complex industrial waste streams. Low pressure plasma was employed to introduce amine functionalities onto the PA surface of commercially available thin-film composite (TFC) membranes. Morphological changes after plasma polymerization were analyzed by SEM and AFM, and average surface roughness decreased by 29%. Amine enrichment provided isoelectric point changes from pH 3.7 to 5.2 for 5 to 15 min of plasma polymerization time. Synchrotron FTIR mappings of the amine-modified surface indicated the addition of a discrete 60 nm film to the PA layer. Furthermore, metal affinity was confirmed by the enhanced binding of silver to the modified surface, supported by an increased antimicrobial functionality with demonstrable elimination of E. coli growth. Essential salt rejection was shown minimally compromised for faster polymerization processes. Plasma polymerization is therefore a viable route to producing functional amine enriched thin-film composite PA membrane surfaces.

Mantle-cell lymphoma.

PubMed

Barista, I; Romaguera, J E; Cabanillas, F

2001-03-01

During the past decade, mantle-cell lymphoma has been established as a new disease entity. The normal counterparts of the cells forming this malignant lymphoma are found in the mantle zone of the lymph node, a thin layer surrounding the germinal follicles. These cells have small to medium-sized nuclei, are commonly indented or cleaved, and stain positively with CD5, CD20, cyclin D1, and FMC7 antibodies. Because of its morphological appearance and a resemblance to other low-grade lymphomas, many of which grow slowly, this lymphoma was initially thought to be an indolent tumour, but its natural course was not thoroughly investigated until the 1990s, when the BCL1 oncogene was identified as a marker for this disease. Mantle-cell lymphoma is a discrete entity, unrelated to small lymphocytic or small-cleaved-cell lymphomas.

Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

NASA Astrophysics Data System (ADS)

Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

1993-06-01

Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

Corrosion-resistant multilayer structures with improved reflectivity

DOEpatents

Soufli, Regina; Fernandez-Perea, Monica; Robinson, Jeff C.

2013-04-09

In one general embodiment, a thin film structure includes a substrate; a first corrosion barrier layer above the substrate; a reflective layer above the first corrosion barrier layer, wherein the reflective layer comprises at least one repeating set of sub-layers, wherein one of the sub-layers of each set of sub-layers being of a corrodible material; and a second corrosion barrier layer above the reflective layer. In another general embodiment, a system includes an optical element having a thin film structure as recited above; and an image capture or spectrometer device. In a further general embodiment, a laser according to one embodiment includes a light source and the thin film structure as recited above.

Internal hypersonic flow. [in thin shock layer

NASA Technical Reports Server (NTRS)

Lin, T. C.; Rubin, S. G.

1974-01-01

An approach for studying hypersonic internal flow with the aid of a thin-shock-layer approximation is discussed, giving attention to a comparison of thin-shock-layer results with the data obtained on the basis of the imposition theory or a finite-difference integration of the Euler equations. Relations in the case of strong interaction are considered together with questions of pressure distribution and aspects of the boundary-layer solution.

Methods for producing thin film charge selective transport layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells.

PubMed

Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young

2018-09-01

The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.

Growth and optical property characterization of textured barium titanate thin films for photonic applications

NASA Astrophysics Data System (ADS)

Dicken, Matthew J.; Diest, Kenneth; Park, Young-Bae; Atwater, Harry A.

2007-03-01

We have investigated the growth of barium titanate thin films on bulk crystalline and amorphous substrates utilizing biaxially oriented template layers. Ion beam-assisted deposition was used to grow thin, biaxially textured, magnesium oxide template layers on amorphous and silicon substrates. Growth of highly oriented barium titanate films on these template layers was achieved by molecular beam epitaxy using a layer-by-layer growth process. Barium titanate thin films were grown in molecular oxygen and in the presence of oxygen radicals produced by a 300 W radio frequency plasma. We used X-ray and in situ reflection high-energy electron diffraction (RHEED) to analyze the structural properties and show the predominantly c-oriented grains in the films. Variable angle spectroscopic ellipsometry was used to analyze and compare the optical properties of the thin films grown with and without oxygen plasma. We have shown that optical quality barium titanate thin films, which show bulk crystal-like properties, can be grown on any substrate through the use of biaxially oriented magnesium oxide template layers.

Effective dimensional reduction algorithm for eigenvalue problems for thin elastic structures: A paradigm in three dimensions

PubMed Central

Ovtchinnikov, Evgueni E.; Xanthis, Leonidas S.

2000-01-01

We present a methodology for the efficient numerical solution of eigenvalue problems of full three-dimensional elasticity for thin elastic structures, such as shells, plates and rods of arbitrary geometry, discretized by the finite element method. Such problems are solved by iterative methods, which, however, are known to suffer from slow convergence or even convergence failure, when the thickness is small. In this paper we show an effective way of resolving this difficulty by invoking a special preconditioning technique associated with the effective dimensional reduction algorithm (EDRA). As an example, we present an algorithm for computing the minimal eigenvalue of a thin elastic plate and we show both theoretically and numerically that it is robust with respect to both the thickness and discretization parameters, i.e. the convergence does not deteriorate with diminishing thickness or mesh refinement. This robustness is sine qua non for the efficient computation of large-scale eigenvalue problems for thin elastic structures. PMID:10655469

Effect of different coating layer on the topography and optical properties of ZnO nanostructured

NASA Astrophysics Data System (ADS)

Mohamed, R.; Mamat, M. H.; Malek, M. F.; Ismail, A. S.; Yusoff, M. M.; Asiah, M. N.; Khusaimi, Z.; Rusop, M.

2018-05-01

Magnesium (Mg) and aluminum (Al) co-doped zinc oxide (MAZO) thin films were synthesized on glass substrate by sol-gel spin coating method. MAZO thin films were prepared at different coating layers range from 1 to 9. Atomic Force Microscopy (AFM) was used to investigate the topography of the thin films. According to the AFM results, Root Means Square (RMS) of MAZO thin films was increased from 0.747 to 6.545 nm, with increase of number coating layer from 1 to 9, respectively. The results shown the variation on structural and topography properties of MAZO seed film when it's deposited at different coating layers on glass substrate. The optical properties was analyzed using UV-Vis spectroscopy. The obtained results show that the transmittance spectra was increased as thin films coating layer increases.

Thin layer model for nonlinear evolution of the Rayleigh-Taylor instability

NASA Astrophysics Data System (ADS)

Zhao, K. G.; Wang, L. F.; Xue, C.; Ye, W. H.; Wu, J. F.; Ding, Y. K.; Zhang, W. Y.

2018-03-01

On the basis of the thin layer approximation [Ott, Phys. Rev. Lett. 29, 1429 (1972)], a revised thin layer model for incompressible Rayleigh-Taylor instability has been developed to describe the deformation and nonlinear evolution of the perturbed interface. The differential equations for motion are obtained by analyzing the forces (the gravity and pressure difference) of fluid elements (i.e., Newton's second law). The positions of the perturbed interface are obtained from the numerical solution of the motion equations. For the case of vacuum on both sides of the layer, the positions of the upper and lower interfaces obtained from the revised thin layer approximation agree with that from the weakly nonlinear (WN) model of a finite-thickness fluid layer [Wang et al., Phys. Plasmas 21, 122710 (2014)]. For the case considering the fluids on both sides of the layer, the bubble-spike amplitude from the revised thin layer model agrees with that from the WN model [Wang et al., Phys. Plasmas 17, 052305 (2010)] and the expanded Layzer's theory [Goncharov, Phys. Rev. Lett. 88, 134502 (2002)] in the early nonlinear growth regime. Note that the revised thin layer model can be applied to investigate the perturbation growth at arbitrary Atwood numbers. In addition, the large deformation (the large perturbed amplitude and the arbitrary perturbed distributions) in the initial stage can also be described by the present model.

Two-dimensional models for the optical response of thin films

NASA Astrophysics Data System (ADS)

Li, Yilei; Heinz, Tony F.

2018-04-01

In this work, we present a systematic study of 2D optical models for the response of thin layers of material under excitation by normally incident light. The treatment, within the framework of classical optics, analyzes a thin film supported by a semi-infinite substrate, with both the thin layer and the substrate assumed to exhibit local, isotropic linear response. Starting from the conventional three-dimensional (3D) slab model of the system, we derive a two-dimensional (2D) sheet model for the thin film in which the optical response is described by a sheet optical conductivity. We develop criteria for the applicability of this 2D sheet model for a layer with an optical thickness far smaller than the wavelength of the light. We examine in detail atomically thin semi-metallic and semiconductor van-der-Waals layers and ultrathin metal films as representative examples. Excellent agreement of the 2D sheet model with the 3D slab model is demonstrated over a broad spectral range from the radio frequency limit to the near ultraviolet. A linearized version of system response for the 2D model is also presented for the case where the influence of the optically thin layer is sufficiently weak. Analytical expressions for the applicability and accuracy of the different optical models are derived, and the appropriateness of the linearized treatment for the materials is considered. We discuss the advantages, as well as limitations, of these models for the purpose of deducing the optical response function of the thin layer from experiment. We generalize the theory to take into account in-plane anisotropy, layered thin film structures, and more general substrates. Implications of the 2D model for the transmission of light by the thin film and for the implementation of half- and totally absorbing layers are discussed.

Initial formation of calcite crystals in the thin prismatic layer with the periostracum of Pinctada fucata.

PubMed

Suzuki, Michio; Nakayama, Seiji; Nagasawa, Hiromichi; Kogure, Toshihiro

2013-02-01

Although the formation mechanism of calcite crystals in the prismatic layer has been studied well in many previous works, the initial state of calcite formation has not been observed in detail using electron microscopes. In this study, we report that the soft prismatic layer with transparent color (the thin prismatic layer) in the tip of the fresh shell of Pinctada fucata was picked up to observe the early calcification phase. A scanning electron microscope (SEM) image showed that the growth tip of the thin prismatic layer was covered by the periostracum, which was also where the initial formation of calcite crystals began. A cross-section containing the thin calcite crystals in the thin prismatic layer with the periostracum was made using a focused ion beam (FIB) system. In a transmission electron microscope (TEM) observation, the thin calcite crystal (thickness is about 1μm) on the periostracum was found to be a single crystal with the c-axis oriented perpendicular to the shell surface. On the other hand, many aggregated small particles consisting of bassanite crystals were observed in the periostracum suggesting the possibility that not only organic sulfate but also inorganic sulfates exist in the prismatic layer. These discoveries in the early calcification phase of the thin prismatic layer may help to clarify the mechanism of regulating the nucleation and orientation of the calcite crystal in the shell. Copyright © 2012 Elsevier Ltd. All rights reserved.

Multilayer shallow water models with locally variable number of layers and semi-implicit time discretization

NASA Astrophysics Data System (ADS)

Bonaventura, Luca; Fernández-Nieto, Enrique D.; Garres-Díaz, José; Narbona-Reina, Gladys

2018-07-01

We propose an extension of the discretization approaches for multilayer shallow water models, aimed at making them more flexible and efficient for realistic applications to coastal flows. A novel discretization approach is proposed, in which the number of vertical layers and their distribution are allowed to change in different regions of the computational domain. Furthermore, semi-implicit schemes are employed for the time discretization, leading to a significant efficiency improvement for subcritical regimes. We show that, in the typical regimes in which the application of multilayer shallow water models is justified, the resulting discretization does not introduce any major spurious feature and allows again to reduce substantially the computational cost in areas with complex bathymetry. As an example of the potential of the proposed technique, an application to a sediment transport problem is presented, showing a remarkable improvement with respect to standard discretization approaches.

Dielectric properties of inorganic fillers filled epoxy thin film

NASA Astrophysics Data System (ADS)

Norshamira, A.; Mariatti, M.

2015-07-01

The demand on the small size and high performance electronics has driven changes in the electronic packaging requirements from discrete capacitor to embedded capacitor. Embedded capacitor can improve electrical performance compared with discrete capacitor. This study aimed to achieve high dielectric of epoxy thin film composite that were targeted for application as embedded capacitor. In this study, inorganic fillers such as Calcium Copper Titanate (CCTO), Iron(III) Oxide (Fe2O3) and Titanium Dioxide (TiO2) were loaded in epoxy system at 5 and 20vol%. Morphology and dielectric properties were investigated to identify the effect of fillers loading and types of fillers on the properties of epoxy thin film composite. Based on the study, CCTO with 20vol% loading was found to have good dielectric properties compared to other type of fillers.

Buffer layers for high-Tc thin films on sapphire

NASA Technical Reports Server (NTRS)

Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

1992-01-01

Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

Layered ultra-thin coherent structures used as electrical resistors having low-temperature coefficient of resistivity

DOEpatents

Werner, T.R.; Falco, C.M.; Schuller, I.K.

1982-08-31

A thin film resistor having a controlled temperature coefficient of resistance (TCR) ranging from negative to positive degrees kelvin and having relatively high resistivity. The resistor is a multilayer superlattice crystal containing a plurality of alternating, ultra-thin layers of two different metals. TCR is varied by controlling the thickness of the individual layers. The resistor can be readily prepared by methods compatible with thin film circuitry manufacturing techniques.

Effect of ZnO buffer layer on phase transition properties of vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Lekang; Li, Chunbo

2016-03-01

VO2 thin films were prepared on ZnO buffer layers by DC magnetron sputtering at room temperature using vanadium target and post annealing at 400 °C. The ZnO buffer layers with different thickness deposited on glass substrates by magnetron sputtering have a high visible and near infrared optical transmittance. The electrical resistivity and the phase transition properties of the VO2/ZnO composite thin films in terms of temperature were investigated. The results showed that the resistivity variation of VO2 thin film with ZnO buffer layer deposited for 35 min was 16 KΩ-cm. The VO2/ZnO composite thin films exhibit a reversible semiconductor-metal phase transition at 48 °C.

Thin-Layer Fuel Cell for Teaching and Classroom Demonstrations

ERIC Educational Resources Information Center

Shirkhanzadeh, M.

2009-01-01

A thin-layer fuel cell is described that is simple and easy to set up and is particularly useful for teaching and classroom demonstrations. The cell is both an electrolyzer and a fuel cell and operates using a thin layer of electrolyte with a thickness of approximately 127 micrometers and a volume of approximately 40 microliters. As an…

Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS2

PubMed Central

Vaskivskyi, Igor; Gospodaric, Jan; Brazovskii, Serguei; Svetin, Damjan; Sutar, Petra; Goreshnik, Evgeny; Mihailovic, Ian A.; Mertelj, Tomaz; Mihailovic, Dragan

2015-01-01

Controllable switching between metastable macroscopic quantum states under nonequilibrium conditions induced either by light or with an external electric field is rapidly becoming of great fundamental interest. We investigate the relaxation properties of a “hidden” (H) charge density wave (CDW) state in thin single crystals of the layered dichalcogenide 1T-TaS2, which can be reached by either a single 35-fs optical laser pulse or an ~30-ps electrical pulse. From measurements of the temperature dependence of the resistivity under different excitation conditions, we find that the metallic H state relaxes to the insulating Mott ground state through a sequence of intermediate metastable states via discrete jumps over a “Devil’s staircase.” In between the discrete steps, an underlying glassy relaxation process is observed, which arises because of reciprocal-space commensurability frustration between the CDW and the underlying lattice. We show that the metastable state relaxation rate may be externally stabilized by substrate strain, thus opening the way to the design of nonvolatile ultrafast high-temperature memory devices based on switching between CDW states with large intrinsic differences in electrical resistance. PMID:26601218

Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS2.

PubMed

Vaskivskyi, Igor; Gospodaric, Jan; Brazovskii, Serguei; Svetin, Damjan; Sutar, Petra; Goreshnik, Evgeny; Mihailovic, Ian A; Mertelj, Tomaz; Mihailovic, Dragan

2015-07-01

Controllable switching between metastable macroscopic quantum states under nonequilibrium conditions induced either by light or with an external electric field is rapidly becoming of great fundamental interest. We investigate the relaxation properties of a "hidden" (H) charge density wave (CDW) state in thin single crystals of the layered dichalcogenide 1T-TaS2, which can be reached by either a single 35-fs optical laser pulse or an ~30-ps electrical pulse. From measurements of the temperature dependence of the resistivity under different excitation conditions, we find that the metallic H state relaxes to the insulating Mott ground state through a sequence of intermediate metastable states via discrete jumps over a "Devil's staircase." In between the discrete steps, an underlying glassy relaxation process is observed, which arises because of reciprocal-space commensurability frustration between the CDW and the underlying lattice. We show that the metastable state relaxation rate may be externally stabilized by substrate strain, thus opening the way to the design of nonvolatile ultrafast high-temperature memory devices based on switching between CDW states with large intrinsic differences in electrical resistance.

Optical characterizations of silver nanoprisms embedded in polymer thin film layers

NASA Astrophysics Data System (ADS)

Carlberg, Miriam; Pourcin, Florent; Margeat, Olivier; Le Rouzo, Judikael; Berginc, Gerard; Sauvage, Rose-Marie; Ackermann, Jorg; Escoubas, Ludovic

2017-10-01

The precise control of light-matter interaction has a wide range of applications and is currently driven by the use of nanoparticles (NPs) by the recent advances in nanotechnology. Taking advantage of the material, size, shape, and surrounding media dependence of the optical properties of plasmonic NPs, thin film layers with tunable optical properties are achieved. The NPs are synthesized by wet chemistry and embedded in a polyvinylpyrrolidone (PVP) polymer thin film layer. Spectrophotometer and spectroscopic ellipsometry measurements are coupled to finite-difference time domain numerical modeling to optically characterize the heterogeneous thin film layers. Silver nanoprisms of 10 to 50 nm edge size exhibit high absorption through the visible wavelength range. A simple optical model composed of a Cauchy law and a Lorentz law, accounting for the optical properties of the nonabsorbing polymer and the absorbing property of the nanoprisms, fits the spectroscopic ellipsometry measurements. Knowing the complex optical indices of heterogeneous thin film layers let us design layers of any optical properties.

Electrokinetics of diffuse soft interfaces. 1. Limit of low Donnan potentials.

PubMed

Duval, Jérôme F L; van Leeuwen, Herman P

2004-11-09

The current theoretical approaches to electrokinetics of gels or polyelectrolyte layers are based on the assumption that the position of the very interface between the aqueous medium and the gel phase is well defined. Within this assumption, spatial profiles for the volume fraction of polymer segments (phi), the density of fixed charges in the porous layer (rho fix), and the coefficient modeling the friction to hydrodynamic flow (k) follow a step-function. In reality, the "fuzzy" nature of the charged soft layer is intrinsically incompatible with the concept of a sharp interface and therefore necessarily calls for more detailed spatial representations for phi, rho fix, and k. In this paper, the notion of diffuse interface is introduced. For the sake of illustration, linear spatial distributions for phi and rho fix are considered in the interfacial zone between the bulk of the porous charged layer and the bulk electrolyte solution. The corresponding distribution for k is inferred from the Brinkman equation, which for low phi reduces to Stokes' equation. Linear electrostatics, hydrodynamics, and electroosmosis issues are analytically solved within the context of streaming current and streaming potential of charged surface layers in a thin-layer cell. The hydrodynamic analysis clearly demonstrates the physical incorrectness of the concept of a discrete slip plane for diffuse interfaces. For moderate to low electrolyte concentrations and nanoscale spatial transition of phi from zero (bulk electrolyte) to phi o (bulk gel), the electrokinetic properties of the soft layer as predicted by the theory considerably deviate from those calculated on the basis of the discontinuous approximation by Ohshima.

Extracting elastic properties of an atomically thin interfacial layer by time-domain analysis of femtosecond acoustics

NASA Astrophysics Data System (ADS)

Chen, H.-Y.; Huang, Y.-R.; Shih, H.-Y.; Chen, M.-J.; Sheu, J.-K.; Sun, C.-K.

2017-11-01

Modern devices adopting denser designs and complex 3D structures have created much more interfaces than before, where atomically thin interfacial layers could form. However, fundamental information such as the elastic property of the interfacial layers is hard to measure. The elastic property of the interfacial layer is of great importance in both thermal management and nano-engineering of modern devices. Appropriate techniques to probe the elastic properties of interfacial layers as thin as only several atoms are thus critically needed. In this work, we demonstrated the feasibility of utilizing the time-resolved femtosecond acoustics technique to extract the elastic properties and mass density of a 1.85-nm-thick interfacial layer, with the aid of transmission electron microscopy. We believe that this femtosecond acoustics approach will provide a strategy to measure the absolute elastic properties of atomically thin interfacial layers.

Investigation of multi-state charge-storage properties of redox-active organic molecules in silicon-molecular hybrid devices for DRAM and Flash applications

NASA Astrophysics Data System (ADS)

Gowda, Srivardhan Shivappa

Molecular electronics has recently spawned a considerable amount of interest with several molecules possessing charge-conduction and charge-storage properties proposed for use in electronic devices. Hybrid silicon-molecular technology has the promise of augmenting the current silicon technology and provide for a transitional path to future molecule-only technology. The focus of this dissertation work has been on developing a class of hybrid silicon-molecular electronic devices for DRAM and Flash memory applications utilizing redox-active molecules. This work exploits the ability of molecules to store charges with single-electron precision at room temperature. The hybrid devices are fabricated by forming self-assembled monolayers of redox-active molecules on Si and oxide (SiO2 and HfO2) surfaces via formation of covalent linkages. The molecules possess discrete quantum states from which electrons can tunnel to the Si substrate at discrete applied voltages (oxidation process, cell write), leaving behind a positively charged layer of molecules. The reduction (erase) process, which is the process of electrons tunneling back from Si to the molecules, neutralizes the positively charged molecular monolayer. Hybrid silicon-molecular capacitor test structures were electrically characterized with an electrolyte gate using cyclic voltammetry (CyV) and impedance spectroscopy (CV) techniques. The redox voltages, kinetics (write/erase speeds) and charge-retention characteristics were found to be strongly dependent on the Si doping type and densities, and ambient light. It was also determined that the redox energy states in the molecules communicate with the valence band of the Si substrate. This allows tuning of write and read states by modulating minority carriers in n- and p-Si substrates. Ultra-thin dielectric tunnel barriers (SiO2, HfO2) were placed between the molecules and the Si substrate to augment charge-retention for Flash memory applications. The redox response was studied as a function of tunnel oxide thickness, dielectric permittivity and energy barrier, and modified Butler-Volmer expressions were postulated to describe the redox kinetics. The speed vs. retention performance of the devices was improved via asymmetric layered tunnel barriers. The properties of molecules can be tailored by molecular design and synthetic chemistry. In this work, it was demonstrated that an alternate route to tune/enhance the properties of the hybrid device is to engineer the substrate (silicon) component. The molecules were attached to diode surfaces to tune redox voltages and improve charge-retention characteristics. N+ pockets embedded in P-Si well were utilized to obtain multiple states from a two-state molecule. The structure was also employed as a characterization tool in investigating the intrinsic properties of the molecules such as lateral conductivity within the monolayer. Redox molecules were also incorporated on an ultra thin gate-oxide of Si MOSFETs with the intent of studying the interaction of redox states with Si MOSFETs. The discrete molecular states were manifested in the drain current and threshold voltage characteristics of the device. This work demonstrates the multi-state modulation of Si-MOSFETs' drain current via redox-active molecular monolayers. Polymeric films of redox-active molecules were incorporated to improve the charge-density (ON/OFF ratio) and these structures may be employed for multi-state, low-voltage Flash memory applications. The most critical aspect of this research effort is to build a reliable and high density solid state memory technology. To this end, efforts were directed towards replacement of the electrolytic gate, which forms an extremely thin insulating double layer (˜10 nm) at the electrolyte-molecule interface, with a combination of an ultra-thin high-K dielectric layer and a metal gate. Several interesting observations were made in the research approaches towards integration and provided valuable insights into the electrolyte-redox systems. In summary, this work provides fundamental insights into the interaction of redox-energy states with silicon substrate and realistic approaches for exploiting the unique properties of the molecules that may enable solutions for nanoscale high density, low-voltage, long retention and multiple bit memory applications.

Determination of the Mass Absorption Coefficient in Two-Layer Ti/V and V/Ti Thin Film Systems by the X-Ray Fluorescence Method

NASA Astrophysics Data System (ADS)

Mashin, N. I.; Chernyaeva, E. A.; Tumanova, A. N.; Gafarova, L. M.

2016-03-01

A new XRF procedure for the determination of the mass absorption coefficient in thin film Ti/V and V/Ti two-layer systems has been proposed. The procedure uses easy-to-make thin-film layers of sputtered titanium and vanadium on a polymer film substrate. Correction coefficients have been calculated that take into account attenuation of primary radiation of the X-ray tube, as well as attenuation of the spectral line of the bottom layer element in the top layer.

High Performance and Highly Reliable ZnO Thin Film Transistor Fabricated by Atomic Layer Deposition for Next Generation Displays

DTIC Science & Technology

2011-08-19

zinc oxide ( ZnO ) thin film as an active channel layer in TFT has become of great interest owing to their specific...630-0192 Japan Phone: +81-743-72-6060 Fax: +81-743-72-6069 E-mail: uraoka@ms.naist.jp Keywords: zinc oxide , thin film transistors , atomic layer...deposition Symposium topic: Transparent Semiconductors Oxides [Abstract] In this study, we fabricated TFTs using ZnO thin film as the

Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnaprasad, P. S., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Jayaraj, M. K., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Antony, Aldrin

2015-03-28

Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BSTmore » thin films show significantly improved tunable performance over polycrystalline thin films.« less

Experimental Study of Acid Treatment Toward Characterization of Structural, Optical, and Morphological Properties of TiO2-SnO2 Composite Thin Film

NASA Astrophysics Data System (ADS)

Fajar, M. N.; Hidayat, R.; Triwikantoro; Endarko

2018-04-01

The TiO2-SnO2 thin film with single and double-layer structure has successfully synthesized on FTO (Fluorine-doped Tin Oxide) substrate using the screen printing technique. The structural, optical, and morphological properties of the film were investigated by XRD, UV-Vis, and SEM, respectively. The results showed that the single and double-layer structure of TiO2-SnO2 thin film has mixed phase with a strong formation of casseritte phase. The acid treatment effect on TiO2-SnO2 thin film decreases the peak intensity of anatase phase formation and thin film’s absorbance values. The morphological study is also revealed that the single layer TiO2-SnO2 thin film had a more porous nature and decreased particle size distribution after acid treatment, while the double-layer TiO2-SnO2 thin film Eroded due to acid treatment.

Nanopore thin film enabled optical platform for drug loading and release.

PubMed

Song, Chao; Che, Xiangchen; Que, Long

2017-08-07

In this paper, a drug loading and release device fabricated using nanopore thin film and layer-by-layer (LbL) nanoassembly is reported. The nanopore thin film is a layer of anodic aluminum oxide (AAO), consisting of honeycomb-shape nanopores. Using the LbL nanoassembly process, the drug, using gentamicin sulfate (GS) as the model, can be loaded into the nanopores and the stacked layers on the nanopore thin film surface. The drug release from the device is achieved by immersing it into flowing DI water. Both the loading and release processes can be monitored optically. The effect of the nanopore size/volume on drug loading and release has also been evaluated. Further, the neuron cells have been cultured and can grow normally on the nanopore thin film, verifying its bio-compatibility. The successful fabrication of nanopore thin film device on silicon membrane render it as a potential implantable controlled drug release device.

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

NASA Astrophysics Data System (ADS)

Xin, Zheng; Ling, Zhi Peng; Nandakumar, Naomi; Kaur, Gurleen; Ke, Cangming; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf

2017-08-01

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density D it(E) and the total interface charge Q tot. Furthermore, the bonding configuration variation of the AlO x films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlO x tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlO x layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

PubMed Central

2013-01-01

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques. PMID:23448090

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate.

PubMed

Wei, Xianqi; Zhao, Ranran; Shao, Minghui; Xu, Xijin; Huang, Jinzhao

2013-02-28

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.

Conductive layer for biaxially oriented semiconductor film growth

DOEpatents

Findikoglu, Alp T.; Matias, Vladimir

2007-10-30

A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

Unexpected structural and magnetic depth dependence of YIG thin films

NASA Astrophysics Data System (ADS)

Cooper, J. F. K.; Kinane, C. J.; Langridge, S.; Ali, M.; Hickey, B. J.; Niizeki, T.; Uchida, K.; Saitoh, E.; Ambaye, H.; Glavic, A.

2017-09-01

We report measurements on yttrium iron garnet (YIG) thin films grown on both gadolinium gallium garnet (GGG) and yttrium aluminum garnet (YAG) substrates, with and without thin Pt top layers. We provide three principal results: the observation of an interfacial region at the Pt/YIG interface, we place a limit on the induced magnetism of the Pt layer, and confirm the existence of an interfacial layer at the GGG/YIG interface. Polarized neutron reflectometry (PNR) was used to give depth dependence of both the structure and magnetism of these structures. We find that a thin film of YIG on GGG is best described by three distinct layers: an interfacial layer near the GGG, around 5 nm thick and nonmagnetic, a magnetic "bulk" phase, and a nonmagnetic and compositionally distinct thin layer near the surface. We theorize that the bottom layer, which is independent of the film thickness, is caused by Gd diffusion. The top layer is likely to be extremely important in inverse spin Hall effect measurements, and is most likely Y2O3 or very similar. Magnetic sensitivity in the PNR to any induced moment in the Pt is increased by the existence of the Y2O3 layer; any moment is found to be less than 0.02 μB/atom .

Influence of transitional volcanic strata on lateral diversion at Yucca Mountain, Nevada

USGS Publications Warehouse

Flint, Lorraine E.; Flint, Alan L.; Selker, John S.

2003-01-01

Natural hydraulic barriers exist at Yucca Mountain, Nevada, a potential high‐level nuclear waste repository, that have been identified as possible lateral diversions for reducing deep percolation through the waste storage area. Historical development of the conceptual model of lateral diversion has been limited by available field data, but numerical investigations presented the possibility of significant lateral diversion due to the presence of a thin, porous rock layer, the Paintbrush nonwelded tuffs. Analytical analyses of the influence of transitional changes in properties suggest that minimal lateral diversion is likely at Yucca Mountain. Numerical models, to this point, have not accounted for the gradual transition of properties or the existence of multiple layers that could inadvertently influence the simulation of lateral diversion as an artifact of numerical model discretization. Analyses were made of subsurface matric potential measurements, and comparisons were made of surface infiltration estimates with deeper percolation flux calculations using chloride‐mass‐balance calculations and simulations of measured temperature profiles. These analyses suggest that insignificant lateral diversion has occurred above the repository horizon and that water generally moves vertically through the Paintbrush nonwelded tuffs.

Programming Cells for Dynamic Assembly of Inorganic Nano-Objects with Spatiotemporal Control.

PubMed

Wang, Xinyu; Pu, Jiahua; An, Bolin; Li, Yingfeng; Shang, Yuequn; Ning, Zhijun; Liu, Yi; Ba, Fang; Zhang, Jiaming; Zhong, Chao

2018-04-01

Programming living cells to organize inorganic nano-objects (NOs) in a spatiotemporally precise fashion would advance new techniques for creating ordered ensembles of NOs and new bio-abiotic hybrid materials with emerging functionalities. Bacterial cells often grow in cellular communities called biofilms. Here, a strategy is reported for programming dynamic biofilm formation for the synchronized assembly of discrete NOs or hetero-nanostructures on diverse interfaces in a dynamic, scalable, and hierarchical fashion. By engineering Escherichia coli to sense blue light and respond by producing biofilm curli fibers, biofilm formation is spatially controlled and the patterned NOs' assembly is simultaneously achieved. Diverse and complex fluorescent quantum dot patterns with a minimum patterning resolution of 100 µm are demonstrated. By temporally controlling the sequential addition of NOs into the culture, multilayered heterostructured thin films are fabricated through autonomous layer-by-layer assembly. It is demonstrated that biologically dynamic self-assembly can be used to advance a new repertoire of nanotechnologies and materials with increasing complexity that would be otherwise challenging to produce. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Numerical analysis of three-dimensional viscous internal flows

NASA Technical Reports Server (NTRS)

Chima, Rodrick V.; Yokota, Jeffrey W.

1988-01-01

A 3-D Navier-Stokes code has been developed for analysis of turbomachinery blade rows and other internal flows. The Navier-Stokes equations are written in a Cartesian coordinate system rotating about the x-axis, and then mapped to a general body-fitted coordinate system. Streamwise viscous terms are neglected using the thin-layer assumption, and turbulence effects are modeled using the Baldwin-Lomax turbulence model. The equations are discretized using finite differences on stacked C-type grids and are solved using a multistage Runge-Kutta algorithm with a spatially-varying time step and implicit residual smoothing. Calculations have been made of a horseshoe vortex formed in front of a flat plate with a round leading edge standing in a turbulent endwall boundary layer. Comparisons are made with experimental data taken by Eckerle and Langston for a circular cylinder under similar conditions. Computer and measured results are compared in terms of endwall flow visualization pictures and total pressure loss contours and vector plots on the symmetry plane. Calculated details of the primary vortex show excellent agreement with the experimental data. The calculations also show a small secondary vortex not seen experimentally.

Discrete Roughness Effects on Shuttle Orbiter at Mach 6

NASA Technical Reports Server (NTRS)

Berry, Scott A.; Hamilton, H. Harris, II

2002-01-01

Discrete roughness boundary layer transition results on a Shuttle Orbiter model in the NASA Langley Research Center 20-Inch Mach 6 Air Tunnel have been reanalyzed with new boundary layer calculations to provide consistency for comparison to other published results. The experimental results were previously obtained utilizing the phosphor thermography system to monitor the status of the boundary layer via global heat transfer images of the Orbiter windward surface. The size and location of discrete roughness elements were systematically varied along the centerline of the 0.0075-scale model at an angle of attack of 40 deg and the boundary layer response recorded. Various correlative approaches were attempted, with the roughness transition correlations based on edge properties providing the most reliable results. When a consistent computational method is used to compute edge conditions, transition datasets for different configurations at several angles of attack have been shown to collapse to a well-behaved correlation.

Methods for fabricating thin film III-V compound solar cell

DOEpatents

Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

2011-08-09

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

Schottky barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1981-01-01

A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

Laser readable thermoluminescent radiation dosimeters and methods for producing thereof

DOEpatents

Braunlich, Peter F.; Tetzlaff, Wolfgang

1989-01-01

Thin layer thermoluminescent radiation dosimeters for use in laser readable dosimetry systems, and methods of fabricating such thin layer dosimeters. The thin layer thermoluminescent radiation dosimeters include a thin substrate made from glass or other inorganic materials capable of withstanding high temperatures and high heating rates. A thin layer of a thermoluminescent phoshphor material is heat bonded to the substrate using an inorganic binder such as glass. The dosimeters can be mounted in frames and cases for ease in handling. Methods of the invention include mixing a suitable phosphor composition and binder, both being in particulate or granular form. The mixture is then deposited onto a substrate such as by using mask printing techniques. The dosimeters are thereafter heated to fuse and bond the binder and phosphor to the substrate.

On the nonlinear development of the most unstable Goertler vortex mode

NASA Technical Reports Server (NTRS)

Denier, James P.; Hall, Philip

1991-01-01

The nonlinear development of the most unstable Gortler vortex mode in boundary layer flows over curved walls is investigated. The most unstable Gortler mode is confined to a viscous wall layer of thickness O(G -1/5) and has spanwise wavelength O(G 11/5); it is, of course, most relevant to flow situations where the Gortler number G is much greater than 1. The nonlinear equations covering the evolution of this mode over an O(G -3/5) streamwise lengthscale are derived and are found to be of a fully nonparallel nature. The solution of these equations is achieved by making use of the numerical scheme used by Hall (1988) for the numerical solution of the nonlinear Gortler equations valid for O(1) Gortler numbers. Thus, the spanwise dependence of the flow is described by a Fourier expansion, whereas the streamwise and normal variations of the flow are dealt with by employing a suitable finite difference discretization of the governing equations. Our calculations demonstrate that, given a suitable initial disturbance, after a brief interval of decay, the energy in all the higher harmonics grows until a singularity is encountered at some downstream position. The structure of the flowfield as this singularity is approached suggests that the singularity is responsible for the vortices, which are initially confined to the thin viscous wall layer, moving away from the wall and into the core of the boundary layer.

Isochronal Ice Sheet Model: a New Approach to Tracer Transport by Explicitly Tracing Accumulation Layers

NASA Astrophysics Data System (ADS)

Born, A.; Stocker, T. F.

2014-12-01

The long, high-resolution and largely undisturbed depositional record of polar ice sheets is one of the greatest resources in paleoclimate research. The vertical profile of isotopic and other geochemical tracers provides a full history of depositional and dynamical variations. Numerical simulations of this archive could afford great advances both in the interpretation of these tracers as well as to help improve ice sheet models themselves, as show successful implementations in oceanography and atmospheric dynamics. However, due to the slow advection velocities, tracer modeling in ice sheets is particularly prone to numerical diffusion, thwarting efforts that employ straightforward solutions. Previous attemps to circumvent this issue follow conceptually and computationally extensive approaches that augment traditional Eulerian models of ice flow with a semi-Lagrangian tracer scheme (e.g. Clarke et al., QSR, 2005). Here, we propose a new vertical discretization for ice sheet models that eliminates numerical diffusion entirely. Vertical motion through the model mesh is avoided by mimicking the real-world ice flow as a thinning of underlying layers (see figure). A new layer is added to the surface at equidistant time intervals (isochronally). Therefore, each layer is uniquely identified with an age. Horizontal motion follows the shallow ice approximation using an implicit numerical scheme. Vertical diffusion of heat which is physically desirable is also solved implicitly. A simulation of a two-dimensional section through the Greenland ice sheet will be discussed.

Layered Organization in the Coastal Ocean: 4-D Assessment of Thin Layer Structure, Dynamics and Impacts

DTIC Science & Technology

2007-09-30

For example, the differences seen between the waters off of the US Pacific Northwest and the California Bight are almost certainly a reflection of the...the Pacific Northwest were favorable for thin layer development during that study. This is even more evident in those cases where thin layers...approach during the 2005 and 2006 LOCO process study combined time series data from an array of our Ocean Response Coastal Analysis System ( ORCAS ) (Donaghay

Switchable 3-0 magnetoelectric nanocomposite thin film with high coupling.

PubMed

McDannald, Austin; Ye, Linghan; Cantoni, Claudia; Gollapudi, Sreenivasulu; Srinivasan, Gopalan; Huey, Bryan D; Jain, Menka

2017-03-02

A mixed precursor solution method was used to deposit 3-0 nanocomposite thin films of PbZr 0.52 Ti 0.48 O 3 (PZT) and CoFe 2 O 4 (CFO). The piezoelectric behavior of PZT and magnetostrictive behavior of CFO allow for magnetoelectric (ME) coupling through strain transfer between the respective phases. High ME coupling is desired for many applications including memory devices, magnetic field sensors, and energy harvesters. The spontaneous phase separation in the 3-0 nanocomposite film was observed, with 25 nm CFO particle or nanophases distributed in discrete layers through the thickness of the PZT matrix. Magnetic-force microscopy images of the nanocomposite thin film under opposite magnetic poling conditions revealed in-plane pancake-like regions of higher concentration of the CFO nanoparticles. The constraints on the size and distribution of the CFO nanoparticles created a unique distribution in a PZT matrix and achieved values of ME coupling of 3.07 V cm -1 Oe -1 at a DC bias of 250 Oe and 1 kHz, increasing up to 25.0 V cm -1 Oe -1 at 90 kHz. Piezo-force microscopy was used to investigate the ferroelectric domain structure before and after opposite magnetic poling directions. It was found that in this nanocomposite, the polarization of the ferroelectric domains switched direction as a result of switching the direction of the magnetization by magnetic fields.

Dielectric properties of inorganic fillers filled epoxy thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Norshamira, A., E-mail: myra.arshad@gmail.com; Mariatti, M., E-mail: mariatti@usm.my

2015-07-22

The demand on the small size and high performance electronics has driven changes in the electronic packaging requirements from discrete capacitor to embedded capacitor. Embedded capacitor can improve electrical performance compared with discrete capacitor. This study aimed to achieve high dielectric of epoxy thin film composite that were targeted for application as embedded capacitor. In this study, inorganic fillers such as Calcium Copper Titanate (CCTO), Iron(III) Oxide (Fe{sub 2}O{sub 3}) and Titanium Dioxide (TiO{sub 2}) were loaded in epoxy system at 5 and 20vol%. Morphology and dielectric properties were investigated to identify the effect of fillers loading and types ofmore » fillers on the properties of epoxy thin film composite. Based on the study, CCTO with 20vol% loading was found to have good dielectric properties compared to other type of fillers.« less

Effect of sheath material and reaction overpressure on Ag protrusions into the TiO2 insulation coating of Bi-2212 round wire

NASA Astrophysics Data System (ADS)

Hossain, I.; Jiang, J.; Matras, M.; Trociewitz, U. P.; Lu, J.; Kametani, F.; Larbalestier, D.; Hellstrom, E.

2017-12-01

In order to develop a high current density in coils, Bi-2212 wires must be electrically discrete in tight winding packs. It is vital to use an insulating layer that is thin, fulfils the dielectric requirements, and can survive the heat treatment whose maximum temperature reaches 890 °C in oxygen. A thin (20-30 µm) ceramic coating could be better as the insulating layer compared to alumino-silicate braided fiber insulation, which is about 150 μm thick and reacts with the Ag sheathed Bi-2212 wire during heat treatment. At present, TiO2 seems to be the most viable ceramic material for such a thin insulation because it is chemically compatible with Ag and Bi-2212 and its sintering temperature is lower than the maximum temperature used for the Bi-2212 heat treatment. However, recent tests of a large Bi-2212 coil insulated only with TiO2 showed severe electrical shorting between the wires after over pressure heat treatment (OPHT). The origin of the shorting was frequent silver protrusions into the porous TiO2 layer that electrically connected adjacent Bi-2212 wires. To understand the mechanism of this unexpected behaviour, we investigated the effect of sheath material and hydrostatic pressure on Ag protrusions. We found that Ag protrusions occur only when TiO2-insulated Ag-0.2%Mg sheathed wire (Ag(Mg) wire) undergoes OPHT at 50 bar. No Ag protrusions were observed when the TiO2-insulated Ag(Mg) wire was processed at 1 bar. The TiO2-insulated wires sheathed with pure Ag that underwent 50 bar OPHT were also free from Ag protrusions. A key finding is that the Ag protrusions from the Ag(Mg) sheath actually contain no MgO, suggesting that local depletion of MgO facilitates local, heterogeneous deformation of the sheath under hydrostatic overpressure. Our study also suggests that predensifying the Ag(Mg) wire before insulating it with TiO2 and doing the final OPHT can potentially limit Ag protrusions.

High average power scaleable thin-disk laser

DOEpatents

Beach, Raymond J.; Honea, Eric C.; Bibeau, Camille; Payne, Stephen A.; Powell, Howard; Krupke, William F.; Sutton, Steven B.

2002-01-01

Using a thin disk laser gain element with an undoped cap layer enables the scaling of lasers to extremely high average output power values. Ordinarily, the power scaling of such thin disk lasers is limited by the deleterious effects of amplified spontaneous emission. By using an undoped cap layer diffusion bonded to the thin disk, the onset of amplified spontaneous emission does not occur as readily as if no cap layer is used, and much larger transverse thin disks can be effectively used as laser gain elements. This invention can be used as a high average power laser for material processing applications as well as for weapon and air defense applications.

The enhancement mechanism of thin plasma layer on antenna radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chunsheng, E-mail: wangcs@hit.edu.cn; Jiang, Binhao; Li, Xueai

A model of plasma-antenna is carried out to study the radiation enhancement mechanism of antenna covered by thin plasma layer. The results show when the radiation intensity achieves maximum, a region of equal electric field is formed due to the reflection of electric field at the interface of plasma and air. The plasma layer acted as an extension of the antenna. Furthermore, the shape of plasma layer is changed to verify the effect of plasma boundary on antenna radiation. The study shows the effect of thin plasma layer on electromagnetic field and provides a type of plasma antenna.

Improving Fire Resistance of Cotton Fabric through Layer-by-Layer Assembled Graphene Multilayer Nanocoating

NASA Astrophysics Data System (ADS)

Jang, Wonjun; Chung, Il Jun; Kim, Junwoo; Seo, Seongmin; Park, Yong Tae; Choi, Kyungwho

2018-05-01

In this study, thin films containing poly(vinyl alcohol) (PVA) and graphene nanoplatelets (GNPs), stabilized with poly(4-styrene-sulfonic acid) (PSS), were assembled by a simple and cost-effective layer-by-layer (LbL) technique in order to introduce the anti-flammability to cotton. These antiflammable layers were characterized by using UV-vis spectrometry and quartz crystal microbalance as a function of the number of bilayers deposited. Scanning electron microscopy was used to visualize the morphology of the thin film coatings on the cotton fabric. The graphene-polymer thin films introduced anti-flammable properties through thermally stable carbonaceous layers at a high temperature. The thermal stability and flame retardant property of graphene-coated cotton was demonstrated by thermogravimetric analysis, cone calorimetry, and vertical flame test. The results indicate that LbL-assembled graphene-polymer thin films can be applied largely in the field of flame retardant.

On-line registration of femtosecond time intervals based on polarization properties of femtosecond stimulated photon echo generated on exciton states

NASA Astrophysics Data System (ADS)

Bakhodurov, A. U.; Vashourin, N. S.; Vinogradov, E. A.; Gazizov, K. Sh.; Kompanets, V. O.; Popov, I. I.; Putilin, S. E.; Chekalin, S. V.

2017-10-01

This paper reflects the results of the research on the character of the dependence of the non-Faraday rotation of the femtosecond stimulated photon echo polarization plane on the time interval between the second and third exciting pulses, discretely varying from 180 to 900 fs in increments 180 fs. The time interval between the first and second pulses was equal to zero. The echo signal was formed at room temperature on exciton states localized on the surface defects of a thin three-layer textured ZnO/Si(P)/Si(B) film in the presence of a homogeneous magnetic field of 0.25 mT applied longitudinally to the optical excitation axis. The qualitative coincidence of the investigated dependence with the theoretical prediction of the investigated effect for gaseous medium is shown.

Transient Infrared Emission Spectroscopy

NASA Astrophysics Data System (ADS)

Jones, Roger W.; McClelland, John F.

1989-12-01

Transient Infrared Emission Spectroscopy (TIRES) is a new technique that reduces the occurrence of self-absorption in optically thick solid samples so that analytically useful emission spectra may be observed. Conventional emission spectroscopy, in which the sample is held at an elevated, uniform temperature, is practical only for optically thin samples. In thick samples the emission from deep layers of the material is partially absorbed by overlying layers.1 This self-absorption results in emission spectra from most optically thick samples that closely resemble black-body spectra. The characteristic discrete emission bands are severely truncated and altered in shape. TIRES bypasses this difficulty by using a laser to heat only an optically thin surface layer. The increased temperature of the layer is transient since the layer will rapidly cool and thicken by thermal diffusion; hence the emission collection must be correlated with the laser heating. TIRES may be done with both pulsed and cw lasers.2,3 When a pulsed laser is used, the spectrometer sampling must be synchronized with the laser pulsing so that only emission during and immediately after each laser pulse is observed.3 If a cw laser is used, the sample must move rapidly through the beam. The hot, transient layer is then in the beam track on the sample at and immediately behind the beam position, so the spectrometer field of view must be limited to this region near the beam position.2 How much self-absorption the observed emission suffers depends on how thick the heated layer has grown by thermal diffusion when the spectrometer samples the emission. Use of a pulsed laser synchronized with the spectrometer sampling readily permits reduction of the time available for heat diffusion to about 100 acs .3 When a cw laser is used, the heat-diffusion time is controlled by how small the spectrometer field of view is and by how rapidly the sample moves past within this field. Both a very small field of view and a very high sample speed would be required to attain a diffusion time of 100 μs. Accordingly, pulsed-laser TIRES generally produces spectra suffering from less self-absorption than cw-laser TIRES does, but the cw-laser technique is technically much simpler since no synchronization is required.

Programmable Electrochemical Rectifier Based on a Thin-Layer Cell.

PubMed

Park, Seungjin; Park, Jun Hui; Hwang, Seongpil; Kwak, Juhyoun

2017-06-21

A programmable electrochemical rectifier based on thin-layer electrochemistry is described here. Both the rectification ratio and the response time of the device are programmable by controlling the gap distance of the thin-layer electrochemical cell, which is easily controlled using commercially available beads. One of the electrodes was modified using a ferrocene-terminated self-assembled monolayer to offer unidirectional charge transfers via soluble redox species. The thin-layer configuration provided enhanced mass transport, which was determined by the gap thickness. The device with the smallest gap thickness (∼4 μm) showed an unprecedented, high rectification ratio (up to 160) with a fast response time in a two-terminal configuration using conventional electronics.

The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2014-08-18

Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

NMR of thin layers using a meanderline surface coil

DOEpatents

Cowgill, Donald F.

2001-01-01

A miniature meanderline sensor coil which extends the capabilities of nuclear magnetic resonance (NMR) to provide analysis of thin planar samples and surface layer geometries. The sensor coil allows standard NMR techniques to be used to examine thin planar (or curved) layers, extending NMRs utility to many problems of modern interest. This technique can be used to examine contact layers, non-destructively depth profile into films, or image multiple layers in a 3-dimensional sense. It lends itself to high resolution NMR techniques of magic angle spinning and thus can be used to examine the bonding and electronic structure in layered materials or to observe the chemistry associated with aging coatings. Coupling this sensor coil technology with an arrangement of small magnets will produce a penetrator probe for remote in-situ chemical analysis of groundwater or contaminant sediments. Alternatively, the sensor coil can be further miniaturized to provide sub-micron depth resolution within thin films or to orthoscopically examine living tissue. This thin-layer NMR technique using a stationary meanderline coil in a series-resonant circuit has been demonstrated and it has been determined that the flat meanderline geometry has about he same detection sensitivity as a solenoidal coil, but is specifically tailored to examine planar material layers, while avoiding signals from the bulk.

Effect of processing parameters on microstructure of MoS{sub 2} ultra-thin films synthesized by chemical vapor deposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yang; You, Suping; Sun, Kewei

2015-06-15

MoS{sub 2} ultra-thin layers are synthesized using a chemical vapor deposition method based on the sulfurization of molybdenum trioxide (MoO{sub 3}). The ultra-thin layers are characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and atomic force microscope (AFM). Based on our experimental results, all the processing parameters, such as the tilt angle of substrate, applied voltage, heating time and the weight of source materials have effect on the microstructures of the layers. In this paper, the effects of such processing parameters on the crystal structures and morphologies of the as-grown layers are studied. It is found that the film obtainedmore » with the tilt angle of 0.06° is more uniform. A larger applied voltage is preferred to the growth of MoS{sub 2} thin films at a certain heating time. In order to obtain the ultra-thin layers of MoS{sub 2}, the weight of 0.003 g of source materials is preferred. Under our optimal experimental conditions, the surface of the film is smooth and composed of many uniformly distributed and aggregated particles, and the ultra-thin MoS{sub 2} atomic layers (1∼10 layers) covers an area of more than 2 mm×2 mm.« less

The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD

NASA Astrophysics Data System (ADS)

Kim, Doyoung; Kang, Hyemin; Kim, Jae-Min; Kim, Hyungjun

2011-02-01

Zinc oxide (ZnO) thin films were prepared by plasma-enhanced atomic layer deposition (PE-ALD) using oxygen plasma as a reactant and the properties were compared with those of thermal atomic layer deposition (TH-ALD) ZnO thin films. While hexagonal wurzite phase with preferential (0 0 2) orientation was obtained for both cases, significant differences were observed in various aspects of film properties including resistivity values between these two techniques. Photoluminescence (PL) measurements have shown that high resistivity of PE-ALD ZnO thin films is due to the oxygen interstitials at low growth temperature of 200 °C, whose amount decreases with increasing growth temperature. Thin film transistors (TFT) using TH- and PE-ALD ZnO as an active layer were also fabricated and the device properties were evaluated comparatively.

Laser readable thermoluminescent radiation dosimeters and methods for producing thereof

DOEpatents

Braunlich, P.F.; Tetzlaff, W.

1989-04-25

Thin layer thermoluminescent radiation dosimeters for use in laser readable dosimetry systems, and methods of fabricating such thin layer dosimeters are disclosed. The thin layer thermoluminescent radiation dosimeters include a thin substrate made from glass or other inorganic materials capable of withstanding high temperatures and high heating rates. A thin layer of a thermoluminescent phosphor material is heat bonded to the substrate using an inorganic binder such as glass. The dosimeters can be mounted in frames and cases for ease in handling. Methods of the invention include mixing a suitable phosphor composition and binder, both being in particulate or granular form. The mixture is then deposited onto a substrate such as by using mask printing techniques. The dosimeters are thereafter heated to fuse and bond the binder and phosphor to the substrate. 34 figs.

Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gajula, D. R., E-mail: dgajula01@qub.ac.uk; Baine, P.; Armstrong, B. M.

Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al{sub 2}O{sub 3} interfacial layer (∼2.8 nm). For diodes with an Al{sub 2}O{sub 3} interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO{sub 2} interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm.

Self-assembled three-dimensional and compressible interdigitated thin-film supercapacitors and batteries

PubMed Central

Nyström, Gustav; Marais, Andrew; Karabulut, Erdem; Wågberg, Lars; Cui, Yi; Hamedi, Mahiar M.

2015-01-01

Traditional thin-film energy-storage devices consist of stacked layers of active films on two-dimensional substrates and do not exploit the third dimension. Fully three-dimensional thin-film devices would allow energy storage in bulk materials with arbitrary form factors and with mechanical properties unique to bulk materials such as compressibility. Here we show three-dimensional energy-storage devices based on layer-by-layer self-assembly of interdigitated thin films on the surface of an open-cell aerogel substrate. We demonstrate a reversibly compressible three-dimensional supercapacitor with carbon nanotube electrodes and a three-dimensional hybrid battery with a copper hexacyanoferrate ion intercalating cathode and a carbon nanotube anode. The three-dimensional supercapacitor shows stable operation over 400 cycles with a capacitance of 25 F g−1 and is fully functional even at compressions up to 75%. Our results demonstrate that layer-by-layer self-assembly inside aerogels is a rapid, precise and scalable route for building high-surface-area 3D thin-film devices. PMID:26021485

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2013-12-17

A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

X-33 Hypersonic Boundary Layer Transition

NASA Technical Reports Server (NTRS)

Berry, Scott A.; Horvath, Thomas J.; Hollis, Brian R.; Thompson, Richard A.; Hamilton, H. Harris, II

1999-01-01

Boundary layer and aeroheating characteristics of several X-33 configurations have been experimentally examined in the Langley 20-Inch Mach 6 Air Tunnel. Global surface heat transfer distributions, surface streamline patterns, and shock shapes were measured on 0.013-scale models at Mach 6 in air. Parametric variations include angles-of-attack of 20-deg, 30-deg, and 40-deg; Reynolds numbers based on model length of 0.9 to 6.6 million; and body-flap deflections of 0, 10 and 20-deg. The effects of discrete and distributed roughness elements on boundary layer transition, which included trip height, size, location, and distribution, both on and off the windward centerline, were investigated. The discrete roughness results on centerline were used to provide a transition correlation for the X-33 flight vehicle that was applicable across the range of reentry angles of attack. The attachment line discrete roughness results were shown to be consistent with the centerline results, as no increased sensitivity to roughness along the attachment line was identified. The effect of bowed panels was qualitatively shown to be less effective than the discrete trips; however, the distributed nature of the bowed panels affected a larger percent of the aft-body windward surface than a single discrete trip.

Fabrication of read-only type triple-layered disc

NASA Astrophysics Data System (ADS)

Yang, Huei Wen; Jeng, Tzuan Ren; Yen, Wen Hsin; Chan, Rong Po; Shin, Kuo Ding; Huang, Der Ray

2003-06-01

The approach to increase optical recording density has become very popular research subject in these years. One direct and effective method is to increase the recording layer stack number. That is to say, to add one more recording layer can get one more recording capacity. In this paper, we will propose a new method for manufacturing read only type multi-layered disc. The process is described in the following. This first recorded data layer (called L0) still follows the traditional DVD disc manufacturing process. We obtain the polycarbonate substrate by replicating from Ni stamper. Then polycarbonate substrate is sputtered thin silicon film for semi-reflection layer. As for second layer (L1) and even more layer (Ln-1) producing, one special kind of duplication (called SKD) method is proposed. The duplication (or replication) source of second or nth recorded data is not only limited from Ni stamper. Even polycarbonate or PMMA substrate has recording data are also acceptable sources. At next step, the duplication source is deposited by thin gold film. Then we apply spin coating to bond the first layer (L0) substrate and second layer (L1) duplication source by choosing suitable UV curing glue. After being emitted by UV lamp for several seconds, we can easily separate the duplication source of second layer (L1) from (L0) substrate. Then we find the thin second data layer (L1) is replicated and stacks upon the first layer. On the same way, we sputter thin AgTi layer on the thin second data layer for another semi- reflective layer. By following the above manufacture step, we can produce more layers. In our experimental, we prepare triple layered read-only type disc. The total capacity is almost 12GB for one side of disc, and 24GB for two side of disc. The read-out intensity of laser from each data layer is expected to be similar. Thus we have designed particular reflectance and transmittance for each data layer by controlling the thickness of thin silicon film. We can verify our design by checking the focusing error signal in S-curve search of optical pickup head. The signal quality for each layer can be found from the signal eye pattern and jitter. For compatibility with present drive system, the requirement of the readout signal from each layer should be same as DVD or CD specification

Insight into the epitaxial encapsulation of Pd catalysts in an oriented metalloporphyrin network thin film for tandem catalysis.

PubMed

Vohra, M Ismail; Li, De-Jing; Gu, Zhi-Gang; Zhang, Jian

2017-06-14

A palladium catalyst (Pd-Cs) encapsulated metalloporphyrin network PIZA-1 thin film with bifunctional properties has been developed through a modified epitaxial layer-by-layer encapsulation approach. Combining the oxidation activity of Pd-Cs and the acetalization activity of the Lewis acidic sites in the PIZA-1 thin film, this bifunctional catalyst of the Pd-Cs@PIZA-1 thin film exhibits a good catalytic activity in a one-pot tandem oxidation-acetalization reaction. Furthermore, the surface components can be controlled by ending the top layer with different precursors in the thin film preparation procedures. The catalytic performances of these thin films with different surface composites were studied under the same conditions, which showed different reaction conversions. The result revealed that the surface component can influence the catalytic performance of the thin films. This epitaxial encapsulation offers a good understanding of the tandem catalysis for thin film materials and provides useful guidance to develop new thin film materials with catalytic properties.

Use of a thin-layer technique in thyroid fine needle aspiration.

PubMed

Malle, Despoina; Valeri, Rosalia-Maria; Pazaitou-Panajiotou, Kalliopi; Kiziridou, Anastasia; Vainas, Iraklis; Destouni, Charicleia

2006-01-01

To investigate the efficacy of the ThinPrep Processor (Cytyc Corporation, Boxborough, Massachusetts, U.S.A) in fine needle aspiration (FNA) of thyroid gland lesions. This study included 459 thyroid FNA specimens obtained from patients who came to our endocrinology department with various thyroid disorders over 3 years. The cytologic material was prepared using both the conventional and ThinPrep method in the first 2 years (285 cases), while in the last one only the ThinPrep method was used (1 74 cases). The smears were stained using a modified Papanicolaou procedure and May-Grünwald-Giemsa stain. Immunocytochemistry was performed on thin-layer slides using specific monoclonal antibodies when needed. Thin-layer and direct smear diagnoses were compared with the final cytologic or histologic diagnoses, when available. Our cases included 279 adenomatoid nodules, 15 cases of Hashimoto thyroiditis, 45 follicular neoplasms, 14 Hürthle cell tumors, 58 papillary carcinomas and 1 5 anaplastic carcinomas. Thin-layer preparations showed a trend toward a lower proportion of inadequate specimens and a lower false negative rate. Cytomorphologic features showed some differences between the 2 methods. Colloid was less frequently observed on ThinPrep slides, while nuclear detail and micronucleoli were more easily detected with this technique. Moreover, ThinPrep appeared to be the appropriate method for the use of ancillary techniques in suspicious cases. Thin-layer cytology improves the diagnostic accuracy of thyroid FNA and offers the possibility of performing new techniques, such as immunocytochemistry, on the same sample in order to detect malignancy as well as the type and origin of thyroid gland neoplasms.

Photovoltaic sub-cell interconnects

DOE Office of Scientific and Technical Information (OSTI.GOV)

van Hest, Marinus Franciscus Antonius Maria; Swinger Platt, Heather Anne

2017-05-09

Photovoltaic sub-cell interconnect systems and methods are provided. In one embodiment, a photovoltaic device comprises a thin film stack of layers deposited upon a substrate, wherein the thin film stack layers are subdivided into a plurality of sub-cells interconnected in series by a plurality of electrical interconnection structures; and wherein the plurality of electrical interconnection structures each comprise no more than two scribes that penetrate into the thin film stack layers.

Effect of atmospheric-pressure plasma treatment on the adhesion properties of a thin adhesive layer in a selective transfer process

NASA Astrophysics Data System (ADS)

Yoon, Min-Ah; Kim, Chan; Hur, Min; Kang, Woo Seok; Kim, Jaegu; Kim, Jae-Hyun; Lee, Hak-Joo; Kim, Kwang-Seop

2018-01-01

The adhesion between a stamp and thin film devices is crucial for their transfer on a flexible substrate. In this paper, a thin adhesive silicone layer on the stamp was treated by atmospheric pressure plasma to locally control the adhesion strength for the selective transfer. The adhesion strength of the silicone layer was significantly reduced after the plasma treatment, while its surface energy was increased. To understand the inconsistency between the adhesion strength and surface energy changes, the surface properties of the silicone layer were characterized using nanoindentation and X-ray photoelectron spectroscopy. These techniques revealed that a thin, hard, silica-like layer had formed on the surface from plasma-enhanced oxidation. This layer played an important role in decreasing the contact area and increasing the interfacial slippage, resulting in decreased adhesion. As a practical application, the transfer process was demonstrated on GaN LEDs that had been previously delaminated by a laser lift-off (LLO) process. Although the LEDs were not transferred onto the treated adhesive layer due to the reduced adhesion, the untreated adhesive layer could readily pick up the LEDs. It is expected that this simple method of controlling the adhesion of a stamp with a thin adhesive layer would enable a continuous, selective and large-scale roll-to-roll selective transfer process and thereby advance the development of flexible, stretchable and wearable electronics.

Tunable-Porosity Membranes From Discrete Nanoparticles

PubMed Central

Marchetti, Patrizia; Mechelhoff, Martin; Livingston, Andrew G.

2015-01-01

Thin film composite membranes were prepared through a facile single-step wire-wound rod coating procedure in which internally crosslinked poly(styrene-co-butadiene) polymer nanoparticles self-assembled to form a thin film on a hydrophilic ultrafiltration support. This nanoparticle film provided a defect-free separation layer 130–150 nm thick, which was highly permeable and able to withstand aggressive pH conditions beyond the range of available commercial membranes. The nanoparticles were found to coalesce to form a rubbery film when heated above their glass transition temperature (Tg). The retention properties of the novel membrane were strongly affected by charge repulsion, due to the negative charge of the hydroxyl functionalized nanoparticles. Porosity was tuned by annealing the membranes at different temperatures, below and above the nanoparticle Tg. This enabled fabrication of membranes with varying performance. Nanofiltration properties were achieved with a molecular weight cut-off below 500 g mol−1 and a low fouling tendency. Interestingly, after annealing above Tg, memory of the interstitial spaces between the nanoparticles persisted. This memory led to significant water permeance, in marked contrast to the almost impermeable films cast from a solution of the same polymer. PMID:26626565

Study on the growth mechanism and optical properties of sputtered lead selenide thin films

NASA Astrophysics Data System (ADS)

Sun, Xigui; Gao, Kewei; Pang, Xiaolu; Yang, Huisheng; Volinsky, Alex A.

2015-11-01

Lead selenide thin films with different microstructure were deposited on Si (1 0 0) substrates using magnetron sputtering at 50 °C, 150 °C and 250 °C, respectively. The crystal structure of the sputtered PbSe thin films varies from amorphous crystalline to columnar grain, and then to double-layer (nano-crystalline layer and columnar grain layer) structure as the deposition temperature increases, which is due to the dominating growth mode of the thin films changes from Frank-van der Merwe (or layer-by-layer) growth mode at 50 °C to Volmer-Weber (or 3D island) growth mode at 150 °C, and then to Stranski-Krastanow (or 3D island-on-wetting-layer) growth mode at 250 °C. The growth mechanism of the sputtered PbSe thin films is mainly dominated by the surface and strain energy contributions. Moreover, the strain energy contribution is more prominent when the deposition temperature is less than 180 °C, while, the surface energy contribution is more prominent when the deposition temperature is higher than 180 °C. The absorption spectra of the sputtered PbSe thin films are in 3.1-5 μm range. Besides, the sputtered PbSe thin film prepared at 250 °C has two different optical band gaps due to its unique double-layer structure. According to the theoretical calculation results, the variation of the band gap with the deposition temperature is determined by the shift of the valence band maximum with the lattice constant.

Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells

NASA Astrophysics Data System (ADS)

Vallejo, W.; Arredondo, C. A.; Gordillo, G.

2010-11-01

In this paper AgInS2 and Zn(O,OH)S thin films were synthesized and characterized. AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS2 thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS2 films presented p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and energy band-gap Eg of about 1.95 eV, Zn(O,OH),S thin films presented Eg of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS2 layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.

Deformation behavior of coherently strained InAs/GaAs(111)A heteroepitaxial systems: Theoretical calculations and experimental measurements

NASA Astrophysics Data System (ADS)

Zepeda-Ruiz, Luis A.; Pelzel, Rodney I.; Nosho, Brett Z.; Weinberg, W. Henry; Maroudas, Dimitrios

2001-09-01

A comprehensive, quantitative analysis is presented of the deformation behavior of coherently strained InAs/GaAs(111)A heteroepitaxial systems. The analysis combines a hierarchical theoretical approach with experimental measurements. Continuum linear elasticity theory is linked with atomic-scale calculations of structural relaxation for detailed theoretical studies of deformation in systems consisting of InAs thin films on thin GaAs(111)A substrates that are mechanically unconstrained at their bases. Molecular-beam epitaxy is used to grow very thin InAs films on both thick and thin GaAs buffer layers on epi-ready GaAs(111)A substrates. The deformation state of these samples is characterized by x-ray diffraction (XRD). The interplanar distances of thin GaAs buffer layers along the [220] and [111] crystallographic directions obtained from the corresponding XRD spectra indicate clearly that thin buffer layers deform parallel to the InAs/GaAs(111)A interfacial plane, thus aiding in the accommodation of the strain induced by lattice mismatch. The experimental measurements are in excellent agreement with the calculated lattice interplanar distances and the corresponding strain fields in the thin mechanically unconstrained substrates considered in the theoretical analysis. Therefore, this work contributes direct evidence in support of our earlier proposal that thin buffer layers in layer-by-layer semiconductor heteroepitaxy exhibit mechanical behavior similar to that of compliant substrates [see, e.g., B. Z. Nosho, L. A. Zepeda-Ruiz, R. I. Pelzel, W. H. Weinberg, and D. Maroudas, Appl. Phys. Lett. 75, 829 (1999)].

Self-assembly of dodecaphenyl POSS thin films

NASA Astrophysics Data System (ADS)

Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

2017-12-01

The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.

Effect of Al doping on performance of ZnO thin film transistors

NASA Astrophysics Data System (ADS)

Dong, Junchen; Han, Dedong; Li, Huijin; Yu, Wen; Zhang, Shendong; Zhang, Xing; Wang, Yi

2018-03-01

In this work, we investigate the Aluminum-doped Zinc Oxide (AZO) thin films and their feasibility as the active layer for thin film transistors (TFTs). A comparison on performance is made between the AZO TFTs and ZnO TFTs. The electrical properties such as saturation mobility, subthreshold swing, and on-to-off current ratio are improved when AZO is utilized as the active layer. Oxygen component of the thin film materials indicates that Al is the suppressor for oxygen defect in active layer, which improves the subthreshold swing. Moreover, based on band structure analyzation, we observe that the carrier concentration of AZO is higher than ZnO, leading to the enhancement of saturation mobility. The microstructure of the thin films convey that the AZO films exhibit much smaller grain boundaries than ZnO films, which results in the lower off-state current and higher on-to-off current ratio of AZO TFTs. The AZO thin films show huge potential to be the active layer of TFTs.

Thin film photovoltaic device with multilayer substrate

DOEpatents

Catalano, Anthony W.; Bhushan, Manjul

1984-01-01

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Controlled placement and orientation of nanostructures

DOEpatents

Zettl, Alex K; Yuzvinsky, Thomas D; Fennimore, Adam M

2014-04-08

A method for controlled deposition and orientation of molecular sized nanoelectromechanical systems (NEMS) on substrates is disclosed. The method comprised: forming a thin layer of polymer coating on a substrate; exposing a selected portion of the thin layer of polymer to alter a selected portion of the thin layer of polymer; forming a suspension of nanostructures in a solvent, wherein the solvent suspends the nanostructures and activates the nanostructures in the solvent for deposition; and flowing a suspension of nanostructures across the layer of polymer in a flow direction; thereby: depositing a nanostructure in the suspension of nanostructures only to the selected portion of the thin layer of polymer coating on the substrate to form a deposited nanostructure oriented in the flow direction. By selectively employing portions of the method above, complex NEMS may be built of simpler NEMSs components.

Effect of inserting a hole injection layer in organic light-emitting diodes: A numerical approach

NASA Astrophysics Data System (ADS)

Lee, Hyeongi; Hwang, Youngwook; Won, Taeyoung

2015-01-01

For investigating the effect of inserting a hole injection layer (HIL), we carried out a computational study concerning organic light-emitting diodes (OLEDs) that had a thin CuPc layer as the hole injection layer. We used S-TAD (2, 2', 7, 7'-tetrakis-(N, Ndiphenylamino)-9, 9-spirobifluoren) for the hole transfer layer, S-DPVBi (4, 4'-bis (2, 2'-diphenylvinyl)-1, 1'-spirobiphenyl) for the emission layer and Alq3 (Tris (8-hyroxyquinolinato) aluminium) for the electron transfer layer. This tri-layer device was compared with four-layer devices. To this tri-layer device, we added a thin CuPc layer, which had a 5.3 eV highest occupied molecular orbital (HOMO) level and a 3.8 eV lowest unoccupied molecular orbital (LUMO) level, as a hole injection layer, and we chose this device for Device A. Also, we varied the LUMO level or the HOMO level of the thin CuPc layer. These two devices were identified as Device C and Device D, respectively. In this paper, we simulated the carrier injection, transport and recombination in these four devices. Thereby, we showed the effect of the HIL, and we demonstrated that the characteristics of these devices were improved by adding a thin layer of CuPc between the anode and the HTL.

Sparse spikes super-resolution on thin grids II: the continuous basis pursuit

NASA Astrophysics Data System (ADS)

Duval, Vincent; Peyré, Gabriel

2017-09-01

This article analyzes the performance of the continuous basis pursuit (C-BP) method for sparse super-resolution. The C-BP has been recently proposed by Ekanadham, Tranchina and Simoncelli as a refined discretization scheme for the recovery of spikes in inverse problems regularization. One of the most well known discretization scheme, the basis pursuit (BP, also known as \

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

NASA Astrophysics Data System (ADS)

Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

2013-03-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

Oriented conductive oxide electrodes on SiO2/Si and glass

DOEpatents

Jia, Quanxi; Arendt, Paul N.

2001-01-01

A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

Damped response of shells by a constrained viscoelastic layer

NASA Technical Reports Server (NTRS)

El-Raheb, M.; Wagner, P.

1986-01-01

Vibration absorbers are introduced into an asymmetric configuration of thin cylinders and tori enclosing an acoustic medium. The absorbers consist of thin axial strips bonded to the cylinder with a thin viscoelastic layer. The constrained layer dissipates the energy of relative motions between strip and cylinder. The absorber is most effective on response modes with two or more circumferential waves. The use of transfer matrices is extended to the coupled cylinder-absorber system.

Photocurrent generation in SnO2 thin film by surface charged chemisorption O ions

NASA Astrophysics Data System (ADS)

Lee, Po-Ming; Liao, Ching-Han; Lin, Chia-Hua; Liu, Cheng-Yi

2018-06-01

We report a photocurrent generation mechanism in the SnO2 thin film surface layer by the charged chemisorption O ions on the SnO2 thin film surface induced by O2-annealing. A critical build-in electric field in the SnO2 surface layer resulted from the charged O ions on SnO2 surface prolongs the lifetime and reduces the recombination probability of the photo-excited electron-hole pairs by UV-laser irradiation (266 nm) in the SnO2 surface layer, which is the key for the photocurrent generation in the SnO2 thin film surface layer. The critical lifetime of prolonged photo-excited electron-hole pair is calculated to be 8.3 ms.

Multi-oxide active layer deposition using Applied Materials Pivot array coater for high-mobility metal oxide TFT

NASA Astrophysics Data System (ADS)

Park, Hyun Chan; Scheer, Evelyn; Witting, Karin; Hanika, Markus; Bender, Marcus; Hsu, Hao Chien; Yim, Dong Kil

2015-11-01

By controlling a thin indium tin oxide (ITO), indium zinc oxide interface layer between gate insulator and indium gallium zinc oxide (IGZO), the thin-film transistor (TFT) performance can reach higher mobility as conventional IGZO as well as superior stability. For large-area display application, Applied Materials static PVD array coater (Applied Materials GmbH & Co. KG, Alzenau, Germany) using rotary targets has been developed to enable uniform thin layer deposition in display industry. Unique magnet motion parameter optimization in Pivot sputtering coater is shown to provide very uniform thin ITO layer to reach TFT performance with high mobility, not only on small scale, but also on Gen8.5 (2500 × 2200 mm glass size) production system.

Highly stable thin film transistors using multilayer channel structure

NASA Astrophysics Data System (ADS)

Nayak, Pradipta K.; Wang, Zhenwei; Anjum, D. H.; Hedhili, M. N.; Alshareef, H. N.

2015-03-01

We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60 °C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

Method of manufacturing a shapeable short-resistant capacitor

DOEpatents

Taylor, Ralph S.; Myers, John D.; Baney, William J.

2013-04-02

A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate. The method may also include bending the resulting capacitor into a serpentine arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.

Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

DOEpatents

Wang, Qi; Iwaniczko, Eugene

2006-10-17

A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

2D granular flows with the μ(I) rheology and side walls friction: A well-balanced multilayer discretization

NASA Astrophysics Data System (ADS)

Fernández-Nieto, E. D.; Garres-Díaz, J.; Mangeney, A.; Narbona-Reina, G.

2018-03-01

We present here numerical modelling of granular flows with the μ (I) rheology in confined channels. The contribution is twofold: (i) a model to approximate the Navier-Stokes equations with the μ (I) rheology through an asymptotic analysis; under the hypothesis of a one-dimensional flow, this model takes into account side walls friction; (ii) a multilayer discretization following Fernández-Nieto et al. (2016) [20]. In this new numerical scheme, we propose an appropriate treatment of the rheological terms through a hydrostatic reconstruction which allows this scheme to be well-balanced and therefore to deal with dry areas. Based on academic tests, we first evaluate the influence of the width of the channel on the normal profiles of the downslope velocity thanks to the multilayer approach that is intrinsically able to describe changes from Bagnold to S-shaped (and vice versa) velocity profiles. We also check the well-balanced property of the proposed numerical scheme. We show that approximating side walls friction using single-layer models may lead to strong errors. Secondly, we compare the numerical results with experimental data on granular collapses. We show that the proposed scheme allows us to qualitatively reproduce the deposit in the case of a rigid bed (i.e. dry area) and that the error made by replacing the dry area by a small layer of material may be large if this layer is not thin enough. The proposed model is also able to reproduce the time evolution of the free surface and of the flow/no-flow interface. In addition, it reproduces the effect of erosion for granular flows over initially static material lying on the bed. This is possible when using a variable friction coefficient μ (I) but not with a constant friction coefficient.

Ultra-high current density thin-film Si diode

DOEpatents

Wang; Qi

2008-04-22

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Electron transport in ultra-thin films and ballistic electron emission microscopy

NASA Astrophysics Data System (ADS)

Claveau, Y.; Di Matteo, S.; de Andres, P. L.; Flores, F.

2017-03-01

We have developed a calculation scheme for the elastic electron current in ultra-thin epitaxial heterostructures. Our model uses a Keldysh’s non-equilibrium Green’s function formalism and a layer-by-layer construction of the epitaxial film. Such an approach is appropriate to describe the current in a ballistic electron emission microscope (BEEM) where the metal base layer is ultra-thin and generalizes a previous one based on a decimation technique appropriated for thick slabs. This formalism allows a full quantum mechanical description of the transmission across the epitaxial heterostructure interface, including multiple scattering via the Dyson equation, which is deemed a crucial ingredient to describe interfaces of ultra-thin layers properly in the future. We introduce a theoretical formulation needed for ultra-thin layers and we compare with results obtained for thick Au(1 1 1) metal layers. An interesting effect takes place for a width of about ten layers: a BEEM current can propagate via the center of the reciprocal space (\\overlineΓ ) along the Au(1 1 1) direction. We associate this current to a coherent interference finite-width effect that cannot be found using a decimation technique. Finally, we have tested the validity of the handy semiclassical formalism to describe the BEEM current.

Lidar observation of transition of cirrus clouds over a tropical station Gadanki (13.45° N, 79.18° E): case studies

NASA Astrophysics Data System (ADS)

Srinivasan, M. A.; Rao, C. Dhananjaya; Krishnaiah, M.

2016-05-01

The present study describes Mie lidar observations of the cirrus cloud passage showing transition between double thin layers into single thick and single thick layer into double thin layers of cirrus over Gadanki region. During Case1: 17 January 2007, Case4: 12 June 2007, Case5: 14 July 2007 and Case6: 24 July 2007 the transition is found to from two thin cirrus layers into single geometrically thick layer. Case2: 14 May 2007 and Case3: 15 May 2007, the transition is found to from single geometrically thick layer into two thin cirrus layers. Linear Depolarization Ratio (LDR) and Back Scatter Ration (BSR) are found to show similar variation with strong peaks during transition; both LDR and Cloud Optical Depth (COD) is found to show similar variation except during transition with strong peaks in COD which is not clearly found from LDR for the all cases. There is a significant weakening of zonal and meridional winds during Case1 which might be due to the transition from multiple to single thick cirrus indicating potential capability of thick cirrus in modulating the wind fields. There exists strong upward wind dominance contributed to significant ascent in cloud-base altitude thereby causing transition of multiple thin layers into single thick cirrus.

Patterning layer-by-layer self-assembled multilayer by lithography and its applications to thin film devices

NASA Astrophysics Data System (ADS)

Hua, Feng

Nanoparticles are exciting materials because they exhibit unique electronic, catalytic, and optical properties. As a novel and promising nanobuilding block, it attracts considerable research efforts in its integration into a wide variety of thin film devices. Nanoparticles were adsorbed onto the substrate with layer-by-layer self-assembly which becomes of great interest due to its suitability in colloid particle assembly. Without extremely high temperatures and sophisticated equipment, molecularly organized films in an exactly pre-designed order can grow on almost all the substrates in nature. Two approaches generating spatially separated patterns comprised of nanoparticles are demonstrated, as well as two approaches patterning more than one type of nonoparticle on a silicon wafer. The structure of the thin film patterned by these approaches are analyzed and considered suitable to the thin film device. Finally, the combination of lithography and layer-by-layer (lbl) self-assembly is utilized to realize the microelectronic device with functional nonoparticles. The lbl self-assembly is the way to coat the nonoparticles and the lighography to pattern them. Based on the coating and patterning technique, a MOS-capacitor, a MOS field-effect-transistor and magnetic thin film cantilever are fabricated.

Thin and thick layers of resin-based sealer cement bonded to root dentine compared: Adhesive behaviour.

PubMed

Pane, Epita S; Palamara, Joseph E A; Messer, Harold H

2015-12-01

This study aims to evaluate tensile and shear bond strengths of one epoxy (AH) and two methacrylate resin-based sealers (EZ and RS) in thin and thick layers bonded to root dentine. An alignment device was prepared for accurate positioning of 20 root dentine cylinders in a predefined gap of 0.1 or 1 mm. Sealer was placed in the interface. Bond strength tests were conducted. Mode of failures and representative surfaces were evaluated. Data were analysed using anova and post-hoc tests, with P < 0.05. The thick layer of sealer produced higher bond strength, except for the shear bond strength of EZ. Significant differences between thin and thick layers were found only in tensile bond strengths of AH and RS. Mixed type of failure was constantly found with all sealers. Bond strengths of thick layers of resin-based sealers to root dentine tended to be higher than with thin layers. © 2015 Australian Society of Endodontology.

Method of Fabricating Schottky Barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1982-01-01

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

Characterization of aluminum selenide bi-layer thin film

NASA Astrophysics Data System (ADS)

Boolchandani, Sarita; Soni, Gyanesh; Srivastava, Subodh; Vijay, Y. K.

2018-05-01

The Aluminum Selenide (AlSe) bi-layer thin films were grown on glass substrate using thermal evaporation method under high vacuum condition. The morphological characterization was done using SEM. Electrical measurement with temperature variation shows that thin films exhibit the semiconductor nature. The optical properties of prepared thin films have also been characterized by UV-VIS spectroscopy measurements. The band gap of composite thin films has been calculated by Tauc's relation at different temperature ranging 35°C-100°C.

Piezoresistivity of mechanically drawn single-walled carbon nanotube (SWCNT) thin films-: mechanism and optimizing principle

NASA Astrophysics Data System (ADS)

Obitayo, Waris

The individual carbon nanotube (CNT) based strain sensors have been found to have excellent piezoresistive properties with a reported gauge factor (GF) of up to 3000. This GF on the other hand, has been shown to be structurally dependent on the nanotubes. In contrast, to individual CNT based strain sensors, the ensemble CNT based strain sensors have very low GFs e.g. for a single walled carbon nanotube (SWCNT) thin film strain sensor, GF is ~1. As a result, studies which are mostly numerical/analytical have revealed the dependence of piezoresistivity on key parameters like concentration, orientation, length and diameter, aspect ratio, energy barrier height and Poisson ratio of polymer matrix. The fundamental understanding of the piezoresistive mechanism in an ensemble CNT based strain sensor still remains unclear, largely due to discrepancies in the outcomes of these numerical studies. Besides, there have been little or no experimental confirmation of these studies. The goal of my PhD is to study the mechanism and the optimizing principle of a SWCNT thin film strain sensor and provide experimental validation of the numerical/analytical investigations. The dependence of the piezoresistivity on key parameters like orientation, network density, bundle diameter (effective tunneling area), and length is studied, and how one can effectively optimize the piezoresistive behavior of a SWCNT thin film strain sensors. To reach this goal, my first research accomplishment involves the study of orientation of SWCNTs and its effect on the piezoresistivity of mechanically drawn SWCNT thin film based piezoresistive sensors. Using polarized Raman spectroscopy analysis and coupled electrical-mechanical test, a quantitative relationship between the strain sensitivity and SWCNT alignment order parameter was established. As compared to randomly oriented SWCNT thin films, the one with draw ratio of 3.2 exhibited ~6x increase on the GF. My second accomplishment involves studying the influence of the network density on the piezoresistivity of mechanically drawn SWCNT thin films. Mechanically drawn SWCNT thin films with different layer (or thickness) e.g. 1-layer, 3-layer, 10-layer and 20-layer SWCNT thin films were prepared to understand the variation of SWCNT network density as well as the alignment of SWCNTs on the strain sensitivity. The less entangled SWCNT bundles observed in the sparse network density (1- layer and 3-layer SWCNT thin films) allows for easy alignment and the best gauge factors. As compared to the randomly oriented SWCNT thin films, the one with draw ratio of 3.2 exhibited ~8x increase on the GF for the 1-layer SWCNT thin films while the 20-layer SWCNT thin films exhibited ~3x increase in the GF. My third accomplishment examines the effect of SWCNT bundles with different diameters on the piezoresistive behavior of mechanically drawn SWCNT thin films. SWCNT thin film network of sparse morphology (1-layer) with different bundle sizes were prepared by varying the sonication duration e.g. S0.5hr, S4hr, S10hr and S20hr and using spraying coating. The GF increased by a factor of ~10 when the randomly oriented SWCNT thin film was stretched to a draw ratio of 3.2 for the S0.5hr SWCNT thin films and by a factor of ~2 for the S20hr SWCNT thin films. Three main mechanisms were attributed to this behavior e.g. effect of concentration of exfoliated nanotubes, bundle reduction due to mechanical stretching, and influence of bundle length on the alignment of SWCNTs. Furthermore, information about the average length and length distribution is very essential when investigating the influence of individual nanotube length on the strain sensitivity. With that in mind, we would use our previously developed preparative ultracentrifuge method (PUM), and our newly developed gel electrophoresis and simultaneous Raman and photoluminescence spectroscopy (GEP-SRSPL) to characterize the average length and length distribution of individual SWCNTs respectively.

Highly ordered vertical structure of Synechococcus populations within the one-millimeter-thick photic zone of a hot spring cyanobacterial mat

NASA Technical Reports Server (NTRS)

Ramsing, N. B.; Ferris, M. J.; Ward, D. M.

2000-01-01

A variety of contemporary techniques were used to investigate the vertical distribution of thermophilic unicellular cyanobacteria, Synechococcus spp., and their activity within the upper 1-mm-thick photic zone of the mat community found in an alkaline siliceous hot spring in Yellowstone National Park in Wyoming. Detailed measurements were made over a diel cycle at a 61 degrees C site. Net oxygenic photosynthesis measured with oxygen microelectrodes was highest within the uppermost 100- to 200-microm-thick layer until midmorning, but as the day progressed, the peak of net activity shifted to deeper layers, stabilizing at a depth of 300 microm from midday throughout the afternoon. Examination of vertical thin sections by bright-field and autofluorescence microscopy revealed the existence of different populations of Synechococcus which form discrete bands at different vertical positions. Denaturing gradient gel electrophoresis analysis of PCR-amplified 16S rRNA gene segments from horizontal cryosections obtained at 100-microm-thick vertical intervals also suggested vertical stratification of cyanobacterial, green sulfur bacterium-like, and green nonsulfur bacterium-like populations. There was no evidence of diel migration. However, image analysis of vertical thin sections revealed the presence of a narrow band of rod-shaped Synechococcus cells in which the cells assumed an upright position. These upright cells, located 400 to 800 microm below the surface, were observed only in mat samples obtained around noon. In mat samples obtained at other time points, the cells were randomly oriented throughout the mat. These combined observations reveal the existence of a highly ordered structure within the very thin photic zone of this hot spring microbial mat, consisting of morphologically similar Synechococcus populations that are likely to be differentially adapted, some co-occurring with green sulfur bacterium-like populations, and all overlying green nonsulfur bacterium-like populations.

Process for forming epitaxial perovskite thin film layers using halide precursors

DOEpatents

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

PubMed

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

19.5%-Efficient CuIn1-xGaxSe2 Photovoltaic Cells Using A Cd-Zn-S Buffer Layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattacharya. R. N.

2008-01-01

CuIn1-xGaxSe2 (CIGS) solar cell junctions prepared by chemical-bath-deposited (CBD) Zn1-xCdxS (CdZnS), ZnS, and CdS buffer layers are discussed. A 19.52%-efficient, CIGS-based, thin-film photovoltaic device has been fabricated using a single-layer CBD CdZnS buffer layer. The mechanism that creates extensive hydroxide and oxide impurities in CBD-ZnS and CBD-CdZnS thin films (compared to CBD-CdS thin film) is presented.

Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman, E-mail: anis@eee.buet.ac.bd

2016-05-21

Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatchmore » between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or polygon, total absorption remains approximately the same. However, the total absorption suffers significantly if the holes are triangle. The transmission spectra of incident light into the bottom subcell, and hence the absorption, change significantly for square and circle holes if the active materials change to cadmium selenide (CdSe) and cadmium telluride (CdTe) in the top and bottom subcells, respectively. Although the intermediate metal layer may induce electron-hole pair recombination due to surface defects, the short-circuit current density of an ultra-thin plasmonic solar cell with an intermediate metal layer with two-dimensional hole array is >9% of that of a structure without the intermediate metal layer.« less

Theoretical model for the discrete flexoelectric effect and a description for the sequence of intermediate smectic phases with increasing periodicity.

PubMed

Emelyanenko, A V; Osipov, M A

2003-11-01

A general phenomenological description and a simple molecular model is proposed for the "discrete" flexoelectric effect in tilted smectic liquid crystal phases. This effect defines a polarization in a smectic layer induced by a difference of director orientations in the two smectic layers adjacent to it. It is shown that the "discrete" flexoelectric effect is determined by electrostatic dipole-quadrupole interaction between positionally correlated molecules located in adjacent smectic layers, while the corresponding dipole-dipole interaction is responsible for a coupling between polarization vectors in neighboring layers. It is shown that a simple phenomenological model of a ferrielectric smectic liquid crystal, which has recently been proposed in the literature, can be used to describe the whole sequence of intermediate chiral smectic C* phases with increasing periods, and to determine the nonplanar structure of each phase without additional assumptions. In this sequence the phases with three- and four-layer periodicities have the same structure, as observed in the experiment. The theory predicts also the structure of intermediate phases with longer periods that have not been studied experimentally so far. The structures of intermediate phases with periodicities of up to nine layers are presented together with the phase diagrams, and a relationship between molecular chirality and the three-dimensional structure of intermediate phases is discussed. It is considered also how the coupling between the spontaneous polarization determined by molecular chirality and the induced polarization determined by the discrete flexoelectric effect stabilizes the nonplanar structure of intermediate phases.

Diffraction efficiency of photothermoplastic layers for the recording of discrete holograms

NASA Technical Reports Server (NTRS)

Koreshev, S. N.; Cherkasov, Yu. A.; Kislovskiy, I. L.

1987-01-01

An experimental and theoretical study of the dependence of eta of a digital phase Fourier hologram of a point object on the amount of deformation delta and the discrete-structure parameters representing the hologram is detailed. An expression is given for eta. Experiments were performed on photothermoplastic layers based on polyvinyl carbazole and trinitrofluorenone charge transfer complexes. The maximum eta, 2%, is found at delta = 0.56 micron.

Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1

DTIC Science & Technology

2011-04-30

IGZO film on the performance of thin film transistors 5 Chapter 2. Hydrogenation of a- IGZO channel layer in the thin film transistors 12...effect of substrate temperature during the deposition of a- IGZO film on the performance of thin film transistors Introduction The effect of substrate...temperature during depositing IGZO channel layer on the performance of amorphous indium-gallium-zinc oxide (a- IGZO

Thin-Film Power Transformers

NASA Technical Reports Server (NTRS)

Katti, Romney R.

1995-01-01

Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

Substrate spacing and thin-film yield in chemical bath deposition of semiconductor thin films

NASA Astrophysics Data System (ADS)

Arias-Carbajal Reádigos, A.; García, V. M.; Gomezdaza, O.; Campos, J.; Nair, M. T. S.; Nair, P. K.

2000-11-01

Thin-film yield in the chemical bath deposition technique is studied as a function of separation between substrates in batch production. Based on a mathematical model, it is proposed and experimentally verified in the case of CdS thin films that the film thickness reaches an asymptotic maximum with increase in substrate separation. It is shown that at a separation less than 1 mm between substrates the yield, i.e. percentage in moles of a soluble cadmium salt deposited as a thin film of CdS, can exceed 50%. This behaviour is explained on the basis of the existence of a critical layer of solution near the substrate, within which the relevant ionic species have a higher probability of interacting with the thin-film layer than of contributing to precipitate formation. The critical layer depends on the solution composition and the temperature of the bath as well as the duration of deposition. An effective value for the critical layer thickness has been defined as half the substrate separation at which 90% of the maximum film thickness for the particular bath composition, bath temperature and duration of deposition is obtained. In the case of CdS thin films studied as an example, the critical layer is found to extend from 0.5 to 2.5 mm from the substrate surface, depending on the deposition conditions.

Effects of morphological control on the characteristics of vertical-type OTFTs using Alq3.

PubMed

Kim, Young Do; Park, Jong Wook; Kang, In Nam; Oh, Se Young

2008-09-01

We have fabricated vertical-type organic thin-film transistors (OTFTs) using tris-(8-hydroxyquinoline) aluminum (Alq(3)) as an n-type active material. Vertical-type OTFT using Alq(3) has a layered structure of Al(source electrode)/Alq(3)(active layer)/Al(gate electrode)/Alq(3)(active layer)/ITO glass(drain electrode). Alq(3) thin films containing various surface morphologies could be obtained by the control of evaporation rate and substrate temperature. The effects of the morphological control of Alq(3) thin layer on the grain size and the flatness of film surface were investigated. The characteristics of vertical-type OTFT significantly influenced the growth condition of Alq(3) layer.

Disruption of vertical motility by shear triggers formation of thin phytoplankton layers.

PubMed

Durham, William M; Kessler, John O; Stocker, Roman

2009-02-20

Thin layers of phytoplankton are important hotspots of ecological activity that are found in the coastal ocean, meters beneath the surface, and contain cell concentrations up to two orders of magnitude above ambient concentrations. Current interpretations of their formation favor abiotic processes, yet many phytoplankton species found in these layers are motile. We demonstrated that layers formed when the vertical migration of phytoplankton was disrupted by hydrodynamic shear. This mechanism, which we call gyrotactic trapping, can be responsible for the thin layers of phytoplankton commonly observed in the ocean. These results reveal that the coupling between active microorganism motility and ambient fluid motion can shape the macroscopic features of the marine ecological landscape.

Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition

NASA Astrophysics Data System (ADS)

Li, Huijin; Han, Dedong; Dong, Junchen; Yu, Wen; Liang, Yi; Luo, Zhen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2018-05-01

The thin film transistors (TFTs) with a dual-layer channel structure combing ZnO thin layer grown at 200 °C and ZnO film grown at 120 °C by atomic layer deposition are fabricated. The dual-layer channel TFT exhibits a low leakage current of 2.8 × 10-13 A, Ion/Ioff ratio of 3.4 × 109, saturation mobility μsat of 12 cm2 V-1 s-1, subthreshold swing (SS) of 0.25 V/decade. The SS value decreases to 0.18 V/decade after the annealing treatment in O2 due to the reduction of the trap states at the channel/dielectric interface and in the bulk channel layer. The enhanced performance obtained from the dual-layer channel TFTs is due to the ability of maintaining high mobility and suppressing the increase in the off-current at the same time.

Numerical treatment of a geometrically nonlinear planar Cosserat shell model

NASA Astrophysics Data System (ADS)

Sander, Oliver; Neff, Patrizio; Bîrsan, Mircea

2016-05-01

We present a new way to discretize a geometrically nonlinear elastic planar Cosserat shell. The kinematical model is similar to the general six-parameter resultant shell model with drilling rotations. The discretization uses geodesic finite elements (GFEs), which leads to an objective discrete model which naturally allows arbitrarily large rotations. GFEs of any approximation order can be constructed. The resulting algebraic problem is a minimization problem posed on a nonlinear finite-dimensional Riemannian manifold. We solve this problem using a Riemannian trust-region method, which is a generalization of Newton's method that converges globally without intermediate loading steps. We present the continuous model and the discretization, discuss the properties of the discrete model, and show several numerical examples, including wrinkling of thin elastic sheets in shear.

Fabrication and characterization of {110}-oriented Pb(Zr,Ti)O3 thin films on Pt/SiO2/Si substrates using PdO//Pd buffer layer

NASA Astrophysics Data System (ADS)

Oshima, Naoya; Uchiyama, Kiyoshi; Ehara, Yoshitaka; Oikawa, Takahiro; Ichinose, Daichi; Tanaka, Hiroki; Sato, Tomoya; Uchida, Hiroshi; Funakubo, Hiroshi

2017-10-01

A strongly {110}-oriented perovskite-type thin film of tetragonal Pb(Zr0.4Ti0.6)O3 (PZT) was successfully obtained on a (100)Si substrate using a {101}PdO//{111}Pd thin film as a buffer layer. The {101}PdO//{111}Pd thin film buffer layer was obtained by oxidizing {111}Pd after depositing {111}Pd on a {111}Pt/TiO x /SiO2/{100}Si substrate. Using this buffer layer, a {110} c -oriented SrRuO3 (SRO) thin film was deposited by sputtering as a bottom electrode of PZT thin films. Subsequently, the {110}-oriented PZT thin film can be deposited on a (110) c SRO thin film by metal-organic chemical deposition (MOCVD) and its properties can be compared with those of PZT thin films with other orientations of {100} and {111}. Among the {100}, {110}, {111}-oriented PZT films, the {100}-oriented one showed the largest remnant polarization, which is in good agreement with those of the PZTs epitaxially grown in the 〈100〉, 〈110〉, and 〈111〉 directions. The other properties, i.e., piezoelectricity and dielectric constants, also showed similar anisotropic tendencies, which is in good agreement with the data reported in the epitaxially grown PZTs.

Automated quadrilateral surface discretization method and apparatus usable to generate mesh in a finite element analysis system

DOEpatents

Blacker, Teddy D.

1994-01-01

An automatic quadrilateral surface discretization method and apparatus is provided for automatically discretizing a geometric region without decomposing the region. The automated quadrilateral surface discretization method and apparatus automatically generates a mesh of all quadrilateral elements which is particularly useful in finite element analysis. The generated mesh of all quadrilateral elements is boundary sensitive, orientation insensitive and has few irregular nodes on the boundary. A permanent boundary of the geometric region is input and rows are iteratively layered toward the interior of the geometric region. Also, an exterior permanent boundary and an interior permanent boundary for a geometric region may be input and the rows are iteratively layered inward from the exterior boundary in a first counter clockwise direction while the rows are iteratively layered from the interior permanent boundary toward the exterior of the region in a second clockwise direction. As a result, a high quality mesh for an arbitrary geometry may be generated with a technique that is robust and fast for complex geometric regions and extreme mesh gradations.

Optimal control of a hybrid rhythmic-discrete task: the bouncing ball revisited.

PubMed

Ronsse, Renaud; Wei, Kunlin; Sternad, Dagmar

2010-05-01

Rhythmically bouncing a ball with a racket is a hybrid task that combines continuous rhythmic actuation of the racket with the control of discrete impact events between racket and ball. This study presents experimental data and a two-layered modeling framework that explicitly addresses the hybrid nature of control: a first discrete layer calculates the state to reach at impact and the second continuous layer smoothly drives the racket to this desired state, based on optimality principles. The testbed for this hybrid model is task performance at a range of increasingly slower tempos. When slowing the rhythm of the bouncing actions, the continuous cycles become separated into a sequence of discrete movements interspersed by dwell times and directed to achieve the desired impact. Analyses of human performance show increasing variability of performance measures with slower tempi, associated with a change in racket trajectories from approximately sinusoidal to less symmetrical velocity profiles. Matching results of model simulations give support to a hybrid control model based on optimality, and therefore suggest that optimality principles are applicable to the sensorimotor control of complex movements such as ball bouncing.

Effect of thin oxide layers incorporated in spin valve structures

NASA Astrophysics Data System (ADS)

Gillies, M. F.; Kuiper, A. E. T.; Leibbrandt, G. W. R.

2001-06-01

The enhancement of the magnetoresistance effect, induced by incorporating nano-oxide layers (NOLs) in a bottom-type spin valve, was studied for various preparation conditions. The effect of a NOL in the Co90Fe10 pinned layer was found to depend critically on the oxygen pressure applied to form the thin oxide film. Pressures over 10-3 Torr O2 yield oxides thicker than about 0.7 nm, which apparently deteriorate the biasing field which exists over the oxide. The magnetoresistance values can further be raised by forming a specular reflecting oxide on top of the sense layer. Promising results were obtained with an Al2O3 capping layer formed in a solid-state oxidation reaction that occurs spontaneously when a thin Al layer is deposited on the oxidized surface of the Co90Fe10 sense layer.

Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS

NASA Technical Reports Server (NTRS)

Grunthaner, F. J.; Grunthaner, P. J.; Vasquez, R. P.; Lewis, B. F.; Maserjian, J.; Madhukar, A.

1979-01-01

The chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy. Depth profiles of these structures have been obtained using argon ion bombardment and wet chemical etching techniques. The chemical destruction induced by the ion profiling method is shown by direct comparison of these methods for identical samples. Fourier transform data-reduction methods based on linear prediction with maximum entropy constraints are used to analyze the discrete structure in oxides and substrates. This discrete structure is interpreted by means of a structure-induced charge-transfer model.

Water softening process

DOEpatents

Sheppard, John D.; Thomas, David G.

1976-01-01

This invention involves an improved process for softening hard water which comprises selectively precipitaing CaCO.sub.3 to form a thin layer thereof, increasing the pH of said water to precipitate magnesium as magnesium hydroxide and then filtering the resultant slurry through said layer. The CaCO.sub.3 layer serves as a thin permeable layer which has particularly useful application in cross-flow filtration applications.

Matching characteristics of different buffer layers with VO2 thin films

NASA Astrophysics Data System (ADS)

Yang, Kai; Zhang, Dongping; Liu, Yi; Guan, Tianrui; Qin, Xiaonan; Zhong, Aihua; Cai, Xingmin; Fan, Ping; Lv, Weizhong

2016-10-01

VO2 thin films were fabricated by reactive DC magnetron sputtering on different buffer layers of MgF2, Al2O3 and TiO2, respectively. The crystallinity and orientation relationship, thickness of VO2 thin films, atoms vibrational modes, optical and electrical property, surface morphology of films were characterized by X-ray diffraction, Raman scattering microscopy, step profiler, spectrophotometer, four-probe technique, and scanning electron microscopy, respectively. XRD results investigated that the films have preferential crystalline planes VO2 (011). The crystallinity of VO2 films grown on TiO2 buffer layers are superior to VO2 directly deposited on soda-lime glass. The Raman bands of the VO2 films correspond to an Ag symmetry mode of VO2 (M). The sample prepared on 100nm TiO2 buffer layer appears nanorods structure, and exhibits remarkable solar energy modulation ability as high as 5.82% in full spectrum and 23% in near infrared spectrum. Cross-sectional SEM image of the thin films samples indicate that MgF2 buffer layer has clear interface with VO2 layer. But there are serious interdiffusion phenomenons between Al2O3, TiO2 buffer layer with VO2 layer.

Isolation of Three Components from Spearmint Oil: An Exercise in Column and Thin-Layer Chromatography

ERIC Educational Resources Information Center

Davies, Don R.; Johnson, Todd M.

2007-01-01

A simple experiment for undergraduate organic chemistry students to separate a colorless mixture using column chromatography and then monitor the outcome of the separation using thin-layer chromatography (TLC) and infrared spectroscopy(IR) is described. The experiment teaches students the principle and techniques of column and thin-layer…

High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering.

PubMed

Moon, Yeon-Keon; Moon, Dae-Yong; Lee, Sang-Ho; Jeong, Chang-Oh; Park, Jong-Wan

2008-09-01

Research in large area electronics, especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs). ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (micro(sat)) of 1.8 cm2/Vs and threshold voltage (Vth) of -0.7 V were obtained.

Magnetoelastic sensor for characterizing properties of thin-film/coatings

NASA Technical Reports Server (NTRS)

Bachas, Leonidas G. (Inventor); Barrett, Gary (Inventor); Grimes, Craig A. (Inventor); Kouzoudis, Dimitris (Inventor); Schmidt, Stefan (Inventor)

2004-01-01

An apparatus for determining elasticity characteristics of a thin-film layer. The apparatus comprises a sensor element having a base magnetostrictive element at least one surface of which is at least partially coated with the thin-film layer. The thin-film layer may be of a variety of materials (having a synthetic and/or bio-component) in a state or form capable of being deposited, manually or otherwise, on the base element surface, such as by way of eye-dropper, melting, dripping, brushing, sputtering, spraying, etching, evaporation, dip-coating, laminating, etc. Among suitable thin-film layers for the sensor element of the invention are fluent bio-substances, thin-film deposits used in manufacturing processes, polymeric coatings, paint, an adhesive, and so on. A receiver, preferably remotely located, is used to measure a plurality of values for magneto-elastic emission intensity of the sensor element in either characterization: (a) the measure of the plurality of values is used to identify a magneto-elastic resonant frequency value for the sensor element; and (b) the measure of the plurality of successive values is done at a preselected magneto-elastic frequency.

Scavenging of oxygen from SrTiO3 by metals and its implications for oxide thin film deposition

NASA Astrophysics Data System (ADS)

Posadas, Agham; Kormondy, Kristy; Guo, Wei; Ponath, Patrick; Kremer, Jacqueline; Hadamek, Tobias; Demkov, Alexander

SrTiO3 is a widely used substrate for the growth of other functional oxide thin films. However, SrTiO3 loses oxygen very easily during oxide thin film deposition even under relatively high oxygen pressures. In some cases, there will be an interfacial layer of oxygen-deficient SrTiO3 formed at the interface with the deposited oxide film, depending on the metals present in the film. By depositing a variety of metals layer by layer and measuring the evolution of the core level spectra of both the deposited metal and SrTiO3 using x-ray photoelectron spectroscopy, we show that there are three distinct types of behavior that occur for thin metal films on SrTiO3. We discuss the implications of these types of behavior for the growth of complex oxide thin films on SrTiO3, and which oxide thin films are expected to produce an interfacial oxygen-deficient layer depending on their elemental constituents.

Extraordinary Corrosion Protection from Polymer-Clay Nanobrick Wall Thin Films.

PubMed

Schindelholz, Eric J; Spoerke, Erik D; Nguyen, Hai-Duy; Grunlan, Jaime C; Qin, Shuang; Bufford, Daniel C

2018-06-20

Metals across all industries demand anticorrosion surface treatments and drive a continual need for high-performing and low-cost coatings. Here we demonstrate polymer-clay nanocomposite thin films as a new class of transparent conformal barrier coatings for protection in corrosive atmospheres. Films assembled via layer-by-layer deposition, as thin as 90 nm, are shown to reduce copper corrosion rates by >1000× in an aggressive H 2 S atmosphere. These multilayer nanobrick wall coatings hold promise as high-performing anticorrosion treatment alternatives to costlier, more toxic, and less scalable thin films, such as graphene, hexavalent chromium, or atomic-layer-deposited metal oxides.

Finite volume solution of the compressible boundary-layer equations

NASA Technical Reports Server (NTRS)

Loyd, B.; Murman, E. M.

1986-01-01

A box-type finite volume discretization is applied to the integral form of the compressible boundary layer equations. Boundary layer scaling is introduced through the grid construction: streamwise grid lines follow eta = y/h = const., where y is the normal coordinate and h(x) is a scale factor proportional to the boundary layer thickness. With this grid, similarity can be applied explicity to calculate initial conditions. The finite volume method preserves the physical transparency of the integral equations in the discrete approximation. The resulting scheme is accurate, efficient, and conceptually simple. Computations for similar and non-similar flows show excellent agreement with tabulated results, solutions computed with Keller's Box scheme, and experimental data.

Effects of V2O5/Au bi-layer electrodes on the top contact Pentacene-based organic thin film transistors

NASA Astrophysics Data System (ADS)

Borthakur, Tribeni; Sarma, Ranjit

2017-05-01

Top-contact Pentacene-based organic thin film transistors (OTFTs) with a thin layer of Vanadium Pent-oxide between Pentacene and Au layer are fabricated. Here we have found that the devices with V2O5/Au bi-layer source-drain electrode exhibit better field-effect mobility, high on-off ratio, low threshold voltage and low sub-threshold slope than the devices with Au only. The field-effect mobility, current on-off ratio, threshold voltage and sub-threshold slope of V2O5/Au bi-layer OTFT estimated from the device with 15 nm thick V2O5 layer is .77 cm2 v-1 s-1, 7.5×105, -2.9 V and .36 V/decade respectively.

Vertical III-nitride thin-film power diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.

2017-03-14

A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

Carbon-Nanotube Conductive Layers for Thin-Film Solar Cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.

2005-01-01

Thin, transparent layers comprising mats of carbon nanotubes have been proposed for providing lateral (that is, inplane) electrical conductivities for collecting electric currents from the front surfaces of the emitter layers of thin-film solar photovoltaic cells. Traditionally, thin, semitransparent films of other electrically conductive materials (usually, indium tin oxide, zinc oxide, or cadmium sulfide) have been used for this purpose. As in the cases of the traditional semitransparent conductive films, the currents collected by the nanotube layers would, in turn, be further collected by front metal contact stripes. Depending on details of a specific solar-cell design, the layer of carbon nanotubes would be deposited in addition to, or instead of, a semitransparent layer of one of these traditional conductive materials (see figure). The proposal is expected to afford the following advantages: The electrical conductivity of the carbon- nanotube layer would exceed that of the corresponding semitransparent layer of traditional electrically conductive material. The greater electrical conductivity of the carbon-nanotube layer would make it possible to retain adequate lateral electrical conductivity while reducing the thickness of, or eliminating entirely, the traditional semitransparent conductive layer. As a consequence of thinning or elimination of the traditional semitransparent conductive layer, less light would be absorbed, so that more of the incident light would be available for photovoltaic conversion. The greater electrical conductivity of the carbon-nanotube layer would make it possible to increase the distance between front metal contact stripes, in addition to (or instead of) thinning or eliminating the layer of traditional semitransparent conductive material. Consequently, the fraction of solar-cell area shadowed by front metal contact stripes would be reduced again, making more of the incident light available for photovoltaic conversion. The electrical conductivities of individual carbon nanotubes can be so high that the mat of carbon nanotubes could be made sparse enough to be adequately transparent while affording adequate lateral electrical conductivity of the mat as a whole. The thickness of the nanotube layer would be chosen so that the layer would contribute significant lateral electrical conductivity, yet would be as nearly transparent as possible to incident light. A typical thickness for satisfying these competing requirements is expected to lie between 50 and 100 nm. The optimum thickness must be calculated by comparing the lateral electrical conductivity, the distance between front metal stripes, and the amount of light lost by absorption in the nanotube layer.

Actuation of digital micro drops by electrowetting on open microfluidic chips fabricated in photolithography.

PubMed

Ko, Hyojin; Lee, Jeong Soo; Jung, Chan-Hee; Choi, Jae-Hak; Kwon, Oh-Sun; Shin, Kwanwoo

2014-08-01

Basic manipulations of discrete liquid drops on opened microfluidic chips based on electrowetting on dielectrics were described. While most developed microfluidic chips are closed systems equipped with a top plate to cover mechanically and to contact electrically to drop samples, our chips are opened systems with a single plate without any electric contact to drops directly. The chips consist of a linear array of patterned electrodes at 1.8 mm pitch was fabricated on a glass plate coated with thin hydrophobic and dielectric layers by using various methods including photolithography, spin coating and ion sputtering. Several actuations such as lateral oscillation, colliding mergence and translational motion for 3-10 μL water drops have been demonstrated satisfactory. All these kinetic performances of opened chips were similar to those of closed chip systems, indicating superiority of a none-contact method for the transport of drops on opened microfluidic chips actuated by using electrowetting technique.

``Illuminating'' electron diffusion regions of collisionless magnetic reconnection using electron agyrotropy

NASA Astrophysics Data System (ADS)

Scudder, Jack; Daughton, William

2008-06-01

Agyrotropy is a scalar measure of the departure of the pressure tensor from cylindrical symmetry about the local magnetic field direction. Ordinarily electrons are well modeled as gyrotropic with very small agyrotropy. Intensified layers of electron agyrotropy are demonstrated to highlight the thin electron gyroradius scale boundary regions adjoining separatrices, X and O lines of full particle simulations of collisionless magnetic reconnection. Examples are presented to show these effects in antiparallel and guide field geometries, pair plasmas, and simulations at a variety of mass ratios, including a hydrogen plasma. Agyrotropy has been determined from the PIC pressure tensor using a new, fast algorithm developed to correct discreteness contributions to the apparent agyrotropy. As a local scalar diagnostic, agyrotropy is shown to be potentially useful with single spacecraft data to identify the crossing or proximity of electron scale current layers, thus providing a kinetic level diagnosis of a given layer's ability to be a possible site of the collisionless reconnection process. Such kinetic tools are certainly complimentary to the other macroscopic signatures of reconnection. Because of the extreme circumstances required for electron agyrotropy, detection of these signatures with framing macroscopic signatures might prove useful for the discovery of new reconnection sites in nature and 3-D codes of collisionless reconnection. The agyrotropy in the 2-D PIC codes reflect long-lived bulges on the distribution function that appear to be organized by the direction and size of slowly evolving perpendicular electric fields in these layers and are not consistent with gyrophase bunching.

Electromagnetic shielding effectiveness of a thin silver layer deposited onto PET film via atmospheric pressure plasma reduction

NASA Astrophysics Data System (ADS)

Oh, Hyo-Jun; Dao, Van-Duong; Choi, Ho-Suk

2018-03-01

This study presents the first use of a plasma reduction reaction under atmospheric pressure to fabricate a thin silver layer on polyethylene terephthalate (PET) film without the use of toxic chemicals, high voltages, or an expensive vacuum apparatus. The developed film is applied to electromagnetic interference (EMI) shielding. After repeatedly depositing a silver layer through a plasma reduction reaction on PET, we can successfully fabricate a uniformly deposited thin silver layer. It was found that both the particle size and film thickness of thin silver layers fabricated at different AgNO3 concentrations increase with an increase in the concentration of AgNO3. However, the roughness of the thin silver layer decreases when increasing the concentration of AgNO3 from 100 to 500 mM, and the roughness increases with a further increase in the concentration of AgNO3. The EMI shielding effectiveness (SE) of the film is measured in the frequency range of 0.045 to 1 GHz. As a result of optimizing the electrical conductivity by measuring sheet resistance of the thin silver layer, the film fabricated from 500 mM AgNO3 exhibits the highest EMI SE among all fabricated films. The maximum values of the EMI SE are 60.490 dB at 0.1 GHz and 54.721 dB at 1.0 GHz with minimum sheet resistance of 0.244 Ω/□. Given that the proposed strategy is simple and effective, it is promising for fabricating various low-cost metal films with high EMI SE.

Continuous methane measurements from a late Holocene Greenland ice core: Atmospheric and in-situ signals

NASA Astrophysics Data System (ADS)

Rhodes, Rachael H.; Faïn, Xavier; Stowasser, Christopher; Blunier, Thomas; Chappellaz, Jérôme; McConnell, Joseph R.; Romanini, Daniele; Mitchell, Logan E.; Brook, Edward J.

2013-04-01

Ancient air trapped inside bubbles in ice cores can now be analysed for methane concentration utilising a laser spectrometer coupled to a continuous melter system. We present a new ultra-high resolution record of atmospheric methane variability over the last 1800 yr obtained from continuous analysis of a shallow ice core from the North Greenland Eemian project (NEEM-2011-S1) during a 4-week laboratory-based measurement campaign. Our record faithfully replicates the form and amplitudes of multi-decadal oscillations previously observed in other ice cores and demonstrates the detailed depth resolution (5.3 cm), rapid acquisition time (30 m day-1) and good long-term reproducibility (2.6%, 2σ) of the continuous measurement technique. In addition, we report the detection of high frequency ice core methane signals of non-atmospheric origin. Firstly, measurements of air from the firn-ice transition region and an interval of ice core dating from 1546-1560 AD (gas age) resolve apparently quasi-annual scale methane oscillations. Traditional gas chromatography measurements on discrete ice samples confirm these signals and indicate peak-to-peak amplitudes of ca. 22 parts per billion (ppb). We hypothesise that these oscillations result from staggered bubble close-off between seasonal layers of contrasting density during time periods of sustained multi-year atmospheric methane change. Secondly, we report the detection of abrupt (20-100 cm depth interval), high amplitude (35-80 ppb excess) methane spikes in the NEEM ice that are reproduced by discrete measurements. We show for the first time that methane spikes present in thin and infrequent layers in polar, glacial ice are accompanied by elevated concentrations of carbon- and nitrogen-based chemical impurities, and suggest that biological in-situ production may be responsible.

Comparison of reproduce signal and noise of conventional and keepered CoCrTa/Cr thin film media

NASA Astrophysics Data System (ADS)

Sin, Kyusik; Ding, Juren; Glijer, Pawel; Sivertsen, John M.; Judy, Jack H.; Zhu, Jian-Gang

1994-05-01

We studied keepered high coercivity CoCrTa/Cr thin film media with a Cr isolation layer between the CoCrTa storage and an overcoating of an isotropic NiFe soft magnetic layer. The influence of the thickness of the NiFe and Cr layers, and the effects of head bias current on the signal output and noise, were studied using a thin film head. The reproduced signal increased by 7.3 dB, but the signal-to-noise ratio decreased by 4 dB at a linear density of 2100 fr/mm (53.3 kfr/in.) with a 1000 Å thick NiFe keeper layer. The medium noise increased with increasing NiFe thickness and the signal output decreased with decreasing Cr thickness. A low output signal obtained with very thin Cr may be due to magnetic interactions between the keeper layer and magnetic media layer. It is observed that signal distortion and timing asymmetry of the output signals depend on the thickness of the keeper layer and the head bias current. The signal distortion increased and the timing asymmetry decreased as the head bias current was increased. These results may be associated with different permeability of the keeper under the poles of the thin film head due to the superposition of head bias and bit fields.

Self-assembled microstructures of confined rod-coil diblock copolymers by self-consistent field theory.

PubMed

Yang, Guang; Tang, Ping; Yang, Yuliang; Wang, Qiang

2010-11-25

We employ the self-consistent field theory (SCFT) incorporating Maier-Saupe orientational interactions between rods to investigate the self-assembly of rod-coil diblock copolymers (RC DBC) in bulk and especially confined into two flat surfaces in 2D space. A unit vector defined on a spherical surface for describing the orientation of rigid blocks in 3D Euclidean space is discretized with an icosahedron triangular mesh to numerically integrate over rod orientation, which is confirmed to have numerical accuracy and stability higher than that of the normal Gaussian quadrature. For the hockey puck-shaped phases in bulk, geometrical confinement, i.e., the film thickness, plays an important role in the self-assembled structures' transitions for the neutral walls. However, for the lamellar phase (monolayer smectic-C) in bulk, the perpendicular lamellae are always stable, less dependent on the film thicknesses because they can relax to the bulk spacing with less-paid coil-stretching in thin films. In particular, a very thin rod layer near the surfaces is formed even in a very thin film. When the walls prefer rods, parallel lamellae are obtained, strongly dependent on the competition between the degree of the surface fields and film geometrical confinement, and the effect of surface field on lamellar structure as a function of film thickness is investigated. Our simulation results provide a guide to understanding the self-assembly of the rod-coil films with desirable application prospects in the fabrication of organic light emitting devices.

Multiple-layered effective medium approximation approach to modeling environmental effects on alumina passivated highly porous silicon nanostructured thin films measured by in-situ Mueller matrix ellipsometry

NASA Astrophysics Data System (ADS)

Mock, Alyssa; Carlson, Timothy; VanDerslice, Jeremy; Mohrmann, Joel; Woollam, John A.; Schubert, Eva; Schubert, Mathias

2017-11-01

Optical changes in alumina passivated highly porous silicon slanted columnar thin films during controlled exposure to toluene vapor are reported. Electron-beam evaporation glancing angle deposition and subsequent atomic layer deposition are utilized to deposit alumina passivated nanostructured porous silicon thin films. In-situ Mueller matrix generalized spectroscopic ellipsometry in an environmental cell is then used to determine changes in optical properties of the nanostructured thin films by inspection of individual Mueller matrix elements, each of which exhibit sensitivity to adsorption. The use of a multiple-layered effective medium approximation model allows for accurate description of the inhomogeneous nature of toluene adsorption onto alumina passivated highly porous silicon slanted columnar thin films.

Effect of Selectively Etched Ferroelectric Thin-Film Layer on the Performance of a Tunable Bandpass Filter

NASA Technical Reports Server (NTRS)

Subramanyam, Guru; Vignesparamoorthy, Sivaruban; Mueller, Carl; VanKeuls, Fred; Warner, Joseph; Miranda, Felix A.

2001-01-01

The main purpose of this work is to study the effect of a selectively etched ferroelectric thin film layer on the performance of an electrically tunable filter. An X-band tunable filter was designed, fabricated and tested on a selectively etched Barium Strontium Titanate (BSTO) ferroelectric thin film layer. Tunable filters with varying lengths of BSTO thin-film in the input and output coupling gaps were modeled, as well as experimentally tested. Experimental results showed that filters with coupling gaps partially filled with BSTO maintained frequency tunability and improved the insertion loss by approx. 2dB. To the best of our knowledge, these results represent the first experimental demonstration of the advantages of selective etching in the performance of thin film ferroelectric-based tunable microwave components.

Surface layer formation of LiCoO2 thin film electrodes in non-aqueous electrolyte containing lithium bis(oxalate)borate

NASA Astrophysics Data System (ADS)

Matsui, Masaki; Dokko, Kaoru; Akita, Yasuhiro; Munakata, Hirokazu; Kanamura, Kiyoshi

2012-07-01

Surface layer formation processes on a LiCoO2 thin film electrode in a non-aqueous electrolyte containing lithium bis(oxalate)borate (LiBOB) were investigated using in situ FTIR spectroscopy and X-ray photoelectron spectroscopy (XPS). The in situ FTIR spectra of the electrolyte solution containing LiBOB showed that the adsorption of BOB anions on the electrode surface occurred during the charge process of the LiCoO2 thin film electrode above 4.0 V. XPS analysis for the LiCoO2 thin film electrode charged in an electrolyte containing LiBOB suggested that the adsorbed BOB anions on the electrode surface prevent the continuous decomposition of hexafluorophosphate (PF6) anions resulting in the formation of a very thin surface layer containing organic species, while the LiCoO2 charged in a LiPF6 solution had a relatively thick surface layer containing organic species and inorganic species.

Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2.

PubMed

Nguyen, Linh-Nam; Lan, Yann-Wen; Chen, Jyun-Hong; Chang, Tay-Rong; Zhong, Yuan-Liang; Jeng, Horng-Tay; Li, Lain-Jong; Chen, Chii-Dong

2014-05-14

Two-dimensional crystals can be assembled into three-dimensional stacks with atomic layer precision, which have already shown plenty of fascinating physical phenomena and been used for prototype vertical-field-effect-transistors.1,2 In this work, interlayer electron tunneling in stacked high-quality crystalline MoS2 films were investigated. A trilayered MoS2 film was sandwiched between top and bottom electrodes with an adjacent bottom gate, and the discrete energy levels in each layer could be tuned by bias and gate voltages. When the discrete energy levels aligned, a resonant tunneling peak appeared in the current-voltage characteristics. The peak position shifts linearly with perpendicular magnetic field, indicating formation of Landau levels. From this linear dependence, the effective mass and Fermi velocity are determined and are confirmed by electronic structure calculations. These fundamental parameters are useful for exploitation of its unique properties.

Nanofiber based triple layer hydro-philic/-phobic membrane - a solution for pore wetting in membrane distillation

PubMed Central

Prince, J. A.; Rana, D.; Matsuura, T.; Ayyanar, N.; Shanmugasundaram, T. S.; Singh, G.

2014-01-01

The innovative design and synthesis of nanofiber based hydro-philic/phobic membranes with a thin hydro-phobic nanofiber layer on the top and a thin hydrophilic nanofiber layer on the bottom of the conventional casted micro-porous layer which opens up a solution for membrane pore wetting and improves the pure water flux in membrane distillation. PMID:25377488

Burning Graphene Layer-by-Layer

PubMed Central

Ermakov, Victor A.; Alaferdov, Andrei V.; Vaz, Alfredo R.; Perim, Eric; Autreto, Pedro A. S.; Paupitz, Ricardo; Galvao, Douglas S.; Moshkalev, Stanislav A.

2015-01-01

Graphene, in single layer or multi-layer forms, holds great promise for future electronics and high-temperature applications. Resistance to oxidation, an important property for high-temperature applications, has not yet been extensively investigated. Controlled thinning of multi-layer graphene (MLG), e.g., by plasma or laser processing is another challenge, since the existing methods produce non-uniform thinning or introduce undesirable defects in the basal plane. We report here that heating to extremely high temperatures (exceeding 2000 K) and controllable layer-by-layer burning (thinning) can be achieved by low-power laser processing of suspended high-quality MLG in air in “cold-wall” reactor configuration. In contrast, localized laser heating of supported samples results in non-uniform graphene burning at much higher rates. Fully atomistic molecular dynamics simulations were also performed to reveal details of oxidation mechanisms leading to uniform layer-by-layer graphene gasification. The extraordinary resistance of MLG to oxidation paves the way to novel high-temperature applications as continuum light source or scaffolding material. PMID:26100466

Refraction and scattering of sound by a shear layer

NASA Technical Reports Server (NTRS)

Schlinker, R. H.; Amiet, R. K.

1980-01-01

The angle and amplitude changes for acoustic waves refracted by a circular open jet shear layer were determined. The generalized refraction theory was assessed experimentally for on axis and off axis acoustic source locations as source frequency varied from 1 kHz to 10 kHz and free stream Mach number varied from 0.1 to 0.4. Angle and amplitude changes across the shear layer show good agreement with theory. Experiments confirm that the refraction theory is independent of shear layer thickness, acoustic source frequency, and source type. A generalized theory is, thus, available for correcting far field noise data acquired in open jet test facilities. The effect of discrete tone scattering by the open jet turbulent shear layer was also studied. Scattering effects were investigated over the same Mach number range as frequency varied from 5 kHz to 15 kHz. Attenuation of discrete tone amplitude and tone broadening were measured as a function of acoustic source position and radiation angle. Scattering was found to be stronger at angles close to the open jet axis than at 90 deg, and becomes stronger as the acoustic source position shifts downstream. A scattering analysis provided an estimate of the onset of discrete tone scattering.

Polymer mediated layer-by-layer assembly of different shaped gold nanoparticles.

PubMed

Budy, Stephen M; Hamilton, Desmond J; Cai, Yuheng; Knowles, Michelle K; Reed, Scott M

2017-02-01

Gold nanoparticles (GNPs) have a wide range of properties with potential applications in electronics, optics, catalysis, and sensing. In order to demonstrate that dense, stable, and portable samples could be created for these applications, multiple layers of GNPs were assembled via drop casting on glass substrates by layer-by-layer (LBL) techniques. Two cationic polyelectrolytes, poly(diallyldimethylammonium chloride) and polyethyleneimine, one anionic polyelectrolyte, poly(sodium 4-styrene sulfonate), and one neutral polymer, polyvinylpyrrolidone, were combined with four different shapes of GNPs (spherical, rod, triangular prismatic, and octahedral) to prepare thin films. A subset of these polymer nanoparticle combinations were assembled into thin films. Synthesized GNPs were characterized via dynamic light scattering, UV-vis spectroscopy, and transmission electron microscopy and the LBL thin films were characterized using UV-vis spectroscopy and atomic force microscopy. Sensing applications of the nanoparticles in solution and thin films were tested by monitoring the localized surface plasmon resonance of the GNPs. LBL thin films were prepared ranging from 25 to 100 layers with optical densities at plasmon from 0.5 to 3.0. Sensitivity in solutions ranged from 14 to 1002nm/refractive index units (RIU) and films ranged from 18.8 to 135.1nm/RIU suggesting reduced access to the GNPs within the films. Copyright © 2016 Elsevier Inc. All rights reserved.

Stepwise crystallization and the layered distribution in crystallization kinetics of ultra-thin poly(ethylene terephthalate) film

NASA Astrophysics Data System (ADS)

Zuo, Biao; Xu, Jianquan; Sun, Shuzheng; Liu, Yue; Yang, Juping; Zhang, Li; Wang, Xinping

2016-06-01

Crystallization is an important property of polymeric materials. In conventional viewpoint, the transformation of disordered chains into crystals is usually a spatially homogeneous process (i.e., it occurs simultaneously throughout the sample), that is, the crystallization rate at each local position within the sample is almost the same. Here, we show that crystallization of ultra-thin poly(ethylene terephthalate) (PET) films can occur in the heterogeneous way, exhibiting a stepwise crystallization process. We found that the layered distribution of glass transition dynamics of thin film modifies the corresponding crystallization behavior, giving rise to the layered distribution of the crystallization kinetics of PET films, with an 11-nm-thick surface layer having faster crystallization rate and the underlying layer showing bulk-like behavior. The layered distribution in crystallization kinetics results in a particular stepwise crystallization behavior during heating the sample, with the two cold-crystallization temperatures separated by up to 20 K. Meanwhile, interfacial interaction is crucial for the occurrence of the heterogeneous crystallization, as the thin film crystallizes simultaneously if the interfacial interaction is relatively strong. We anticipate that this mechanism of stepwise crystallization of thin polymeric films will allow new insight into the chain organization in confined environments and permit independent manipulation of localized properties of nanomaterials.

Stepwise crystallization and the layered distribution in crystallization kinetics of ultra-thin poly(ethylene terephthalate) film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zuo, Biao, E-mail: chemizuo@zstu.edu.cn, E-mail: wxinping@yahoo.com; Xu, Jianquan; Sun, Shuzheng

2016-06-21

Crystallization is an important property of polymeric materials. In conventional viewpoint, the transformation of disordered chains into crystals is usually a spatially homogeneous process (i.e., it occurs simultaneously throughout the sample), that is, the crystallization rate at each local position within the sample is almost the same. Here, we show that crystallization of ultra-thin poly(ethylene terephthalate) (PET) films can occur in the heterogeneous way, exhibiting a stepwise crystallization process. We found that the layered distribution of glass transition dynamics of thin film modifies the corresponding crystallization behavior, giving rise to the layered distribution of the crystallization kinetics of PET films,more » with an 11-nm-thick surface layer having faster crystallization rate and the underlying layer showing bulk-like behavior. The layered distribution in crystallization kinetics results in a particular stepwise crystallization behavior during heating the sample, with the two cold-crystallization temperatures separated by up to 20 K. Meanwhile, interfacial interaction is crucial for the occurrence of the heterogeneous crystallization, as the thin film crystallizes simultaneously if the interfacial interaction is relatively strong. We anticipate that this mechanism of stepwise crystallization of thin polymeric films will allow new insight into the chain organization in confined environments and permit independent manipulation of localized properties of nanomaterials.« less

Approximate transient and long time limit solutions for the band broadening induced by the thin sidewall-layer in liquid chromatography columns.

PubMed

Broeckhoven, Ken; Desmet, Gert

2007-11-16

Using a combination of both analytical and numerical techniques, approximate analytical expressions have been established for the transient and long time limit band broadening, originating from the presence of a thin disturbed sidewall layer in liquid chromatography columns, including packed, monolithic as well as microfabricated columns. The established expressions can be used to compare the importance of a thin disturbed sidewall layer with that of other radial heterogeneity effects (such as transcolumn packing density variations due to the relief of packing stresses). The expressions are independent of the actual velocity profile inside the layer as long as the disturbed sidewall layer occupies less than 2.5% of the column width.

Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings

NASA Astrophysics Data System (ADS)

Kats, Mikhail A.; Byrnes, Steven J.; Blanchard, Romain; Kolle, Mathias; Genevet, Patrice; Aizenberg, Joanna; Capasso, Federico

2013-09-01

Recently a new class of optical interference coatings was introduced which comprises ultra-thin, highly absorbing dielectric layers on metal substrates. We show that these lossy coatings can be augmented by an additional transparent subwavelength layer. We fabricated a sample comprising a gold substrate, an ultra-thin film of germanium with a thickness gradient, and several alumina films. The experimental reflectivity spectra showed that the additional alumina layer increases the color range that can be obtained, in agreement with calculations. More generally, this transparent layer can be used to enhance optical absorption, protect against erosion, or as a transparent electrode for optoelectronic devices.

High Performance 50 nm InAlAs/In0.75GaAs Metamorphic High Electron Mobility Transistors with Si3N4 Passivation on Thin InGaAs Layer

NASA Astrophysics Data System (ADS)

Yeon, Seongjin; Seo, Kwangseok

2008-04-01

We fabricated 50 nm InAlAs/InGaAs metamorphic high electron mobility transistors (HEMTs) with a very thin barrier. Through the reduction of the gate-channel distance (dGC) in the epitaxial structure, a channel aspect ratio (ARC) of over three was achieved when Lg was 50 nm. We inserted a thin InGaAs layer as a protective layer, and tested various gate structures to reduce surface problems induced by barrier shrinkage and to optimize the device characteristics. Through the optimization of the gate structure with the thin InGaAs layer, the fabricated 50 nm metamorphic HEMT exhibited high DC and RF characteristics, Gm of 1.5 S/mm, and fT of 490 GHz.

Frontally eluted components procedure with thin layer chromatography as a mode of sample preparation for high performance liquid chromatography quantitation of acetaminophen in biological matrix.

PubMed

Klimek-Turek, A; Sikora, M; Rybicki, M; Dzido, T H

2016-03-04

A new concept of using thin-layer chromatography to sample preparation for the quantitative determination of solute/s followed by instrumental techniques is presented Thin-layer chromatography (TLC) is used to completely separate acetaminophen and its internal standard from other components (matrix) and to form a single spot/zone containing them at the solvent front position (after the final stage of the thin-layer chromatogram development). The location of the analytes and internal standard in the solvent front zone allows their easy extraction followed by quantitation by HPLC. The exctraction procedure of the solute/s and internal standard can proceed from whole solute frontal zone or its part without lowering in accuracy of quantitative analysis. Copyright © 2016 Elsevier B.V. All rights reserved.

Thin layer drying of cassava starch using continuous vibrated fluidized bed dryer

NASA Astrophysics Data System (ADS)

Suherman, Trisnaningtyas, Rona

2015-12-01

This paper present the experimental work and thin layer modelling of cassava starch drying in continuous vibrated fluidized bed dryer. The experimental data was used to validate nine thin layer models of drying curve. Cassava starch with 0.21 initial moisture content was dried in different air drying temperature (50°C, 55°C, 60°C, 65°C, 70°C), different weir height in bed (0 and 1 cm), and different solid feed flow (10 and 30 gr.minute-1). The result showed air dryer temperature has a significant effect on drying curve, while the weir height and solid flow rate are slightly. Based on value of R2, χ2, and RMSE, Page Model is the most accurate simulation for thin layer drying model of cassava starch.

Fabrication of nanocrystal ink based superstrate-type CuInS₂ thin film solar cells.

PubMed

Cho, Jin Woo; Park, Se Jin; Kim, Woong; Min, Byoung Koun

2012-07-05

A CuInS₂ (CIS) nanocrystal ink was applied to thin film solar cell devices with superstrate-type configuration. Monodispersed CIS nanocrystals were synthesized by a colloidal synthetic route and re-dispersed in toluene to form an ink. A spray method was used to coat CIS films onto conducting glass substrates. Prior to CIS film deposition, TiO₂ and CdS thin films were also prepared as a blocking layer and a buffer layer, respectively. We found that both a TiO₂ blocking layer and a CdS buffer layer are necessary to generate photoresponses in superstrate-type devices. The best power conversion efficiency (∼1.45%) was achieved by the CIS superstrate-type thin film solar cell device with 200 and 100 nm thick TiO₂ and CdS films, respectively.

Synthesis and Characterization of Hydrophobic Silica Thin Layer Derived from Methyltrimethoxysilane (MTMS)

NASA Astrophysics Data System (ADS)

Darmawan, Adi; Utari, Riyadini; Eka Saputra, Riza; Suhartana; Astuti, Yayuk

2018-01-01

This study investigated the synthesis and characterization of MTMS hydrophobic silica prepared by sol-gel method. In principle, silica xerogels and silica thin layer were obtained by reacting MTMS in ethanol solvent in some pH variations. The MTMS solution was used to modify the surface of the ceramic plate by dipcoating method to further be calcined at two different temperatures of 350°C and 500°C. The silica xerogels were analysed by FTIR, TGA-DSC and GSA to determine functional group characteristics, thermal properties and pore morphology respectively. Meanwhile, the silica thin layers were analysed their hydrophobic properties using water contact angle measurement and surface roughness determination using SEM. The results showed that the higher the pH used in the MTMS solution, the higher the resulting contact angle. The highest contact angle was obtained at pH 8.12 which reached 94.7° and 79.5° for silica thin layer calcined at 350°C and 500°C, respectively. The TGA results indicated that the methyl group survived up to 400°C and disappeared at 500°C which had implications on silica thin layer hydrophobic nature. GSA result exhibited that the silica xerogel had a close structure with a very low pore volume. While the SEM-EDX results displayed that the silica thin layer prepared at acidic pH had smoother surface morphology and became rough when prepared at an alkaline pH.

Microscale measurements of oxygen concentration across the thickness of diffusion media in operating polymer electrolyte fuel cells

NASA Astrophysics Data System (ADS)

Epting, William K.; Litster, Shawn

2016-02-01

Although polymer electrolyte fuel cells (PEFCs) offer promise as efficient, low emission power sources, the large amount of platinum catalyst used for the cathode's oxygen reduction (ORR) results in high costs. One approach to using less Pt is to increase the oxygen concentration at the catalyst by reducing the oxygen transport resistances. An important resistance is that of the diffusion media (DM). The DM are highly heterogeneous porous carbon fiber substrates with a graded composition of additives across their thickness. In this work we use an oxygen microsensor with a micro-positioning system to measure the oxygen concentration and presence of liquid water in the pores at discrete points across the thickness of a commercial carbon felt DM in operating PEFCs. Under conditions with no liquid water, the DM accounts for 60% of the oxygen depletion, with 60-70% of that depletion being due to the thin microporous layer (MPL) on the catalyst layer (CL) side. Using concentration gradient data, we quantify the non-uniform local transport resistance across the DM and relate it to high resolution 3D X-ray computed tomography of the same DM.

Composite lamination method

NASA Technical Reports Server (NTRS)

Dickerson, G. E. (Inventor)

1977-01-01

A process was developed for preparing relatively thick composite laminate structure wherein thin layers of prepreg tapes are assembled, these thin layers are cut into strips that are partially cured, and stacked into the desired thickness with uncured prepreg disposed between each layer of strips. The formed laminate is finally cured and thereafter machined to the desired final dimensions.

The LS-STAG immersed boundary method for non-Newtonian flows in irregular geometries: flow of shear-thinning liquids between eccentric rotating cylinders

NASA Astrophysics Data System (ADS)

Botella, Olivier; Ait-Messaoud, Mazigh; Pertat, Adrien; Cheny, Yoann; Rigal, Claire

2015-04-01

This paper presents the extension of a well-established immersed boundary/cut-cell method, the LS-STAG method (Cheny and Botella in J Comput Phys 229:1043-1076, 2010), to non-Newtonian flow computations in 2D irregular geometries. One of the distinguished features of our IB method is to use level-set techniques in the cut-cells near the irregular boundary, where accurate discretization is of paramount importance for stability and accuracy of the computations. For this purpose, we present here an accurate discretization of the velocity gradients and shear rate in the cut-cells that fits elegantly in the framework of the velocity-pressure-stress staggered arrangement and the special quadratures developed previously for viscoelastic flows. After assessing the accuracy of the discretization on a benchmark solution for power-law fluids, the LS-STAG code is applied to the flow of various shear-thinning xanthan solutions in a wide-gap, non-coaxial, Taylor-Couette reactor for which rheological characterization, experimental flow measurements (PIV) and FLUENT simulations have recently been performed in our group. Our numerical investigation will give new insight on the flow patterns (onset, size and position of the recirculation zone) and will firmly correlate them to global flow properties such as shear-thinning index, generalized Reynolds number and torque ratio at the cylinders.

A Step toward High-Energy Silicon-Based Thin Film Lithium Ion Batteries.

PubMed

Reyes Jiménez, Antonia; Klöpsch, Richard; Wagner, Ralf; Rodehorst, Uta C; Kolek, Martin; Nölle, Roman; Winter, Martin; Placke, Tobias

2017-05-23

The next generation of lithium ion batteries (LIBs) with increased energy density for large-scale applications, such as electric mobility, and also for small electronic devices, such as microbatteries and on-chip batteries, requires advanced electrode active materials with enhanced specific and volumetric capacities. In this regard, silicon as anode material has attracted much attention due to its high specific capacity. However, the enormous volume changes during lithiation/delithiation are still a main obstacle avoiding the broad commercial use of Si-based electrodes. In this work, Si-based thin film electrodes, prepared by magnetron sputtering, are studied. Herein, we present a sophisticated surface design and electrode structure modification by amorphous carbon layers to increase the mechanical integrity and, thus, the electrochemical performance. Therefore, the influence of amorphous C thin film layers, either deposited on top (C/Si) or incorporated between the amorphous Si thin film layers (Si/C/Si), was characterized according to their physical and electrochemical properties. The thin film electrodes were thoroughly studied by means of electrochemical impedance spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. We can show that the silicon thin film electrodes with an amorphous C layer showed a remarkably improved electrochemical performance in terms of capacity retention and Coulombic efficiency. The C layer is able to mitigate the mechanical stress during lithiation of the Si thin film by buffering the volume changes and to reduce the loss of active lithium during solid electrolyte interphase formation and cycling.

Effects of different wetting layers on the growth of smooth ultra-thin silver thin films

NASA Astrophysics Data System (ADS)

Ni, Chuan; Shah, Piyush; Sarangan, Andrew M.

2014-09-01

Ultrathin silver films (thickness below 10 nm) are of great interest as optical coatings on windows and plasmonic devices. However, producing these films has been a continuing challenge because of their tendency to form clusters or islands rather than smooth contiguous thin films. In this work we have studied the effect of Cu, Ge and ZnS as wetting layers (1.0 nm) to achieve ultrasmooth thin silver films. The silver films (5 nm) were grown by RF sputter deposition on silicon and glass substrates using a few monolayers of the different wetting materials. SEM imaging was used to characterize the surface properties such as island formation and roughness. Also the optical properties were measured to identify the optical impact of the different wetting layers. Finally, a multi-layer silver based structure is designed and fabricated, and its performance is evaluated. The comparison between the samples with different wetting layers show that the designs with wetting layers which have similar optical properties to silver produce the best overall performance. In the absence of a wetting layer, the measured optical spectra show a significant departure from the model predictions, which we attribute primarily to the formation of clusters.

Durable high strength cement concrete topping for asphalt roads

NASA Astrophysics Data System (ADS)

Vyrozhemskyi, Valerii; Krayushkina, Kateryna; Bidnenko, Nataliia

2017-09-01

Work on improving riding qualities of pavements by means of placing a thin cement layer with high roughness and strength properties on the existing asphalt pavement were conducted in Ukraine for the first time. Such pavement is called HPCM (High Performance Cementitious Material). This is a high-strength thin cement-layer pavement of 8-9 mm thickness reinforced with metal or polymer fiber of less than 5 mm length. Increased grip properties are caused by placement of stone material of 3-5 mm fraction on the concrete surface. As a result of the research, the preparation and placement technology of high-strength cement thin-layer pavement reinforced with fiber was developed to improve friction properties of existing asphalt pavements which ensures their roughness and durability. It must be emphasized that HPCM is a fundamentally new type of thin-layer pavement in which a rigid layer of 10 mm thickness is placed on a non-rigid base thereby improving riding qualities of asphalt pavement at any season of a year.

Parameter identification of process simulation models as a means for knowledge acquisition and technology transfer

NASA Astrophysics Data System (ADS)

Batzias, Dimitris F.; Ifanti, Konstantina

2012-12-01

Process simulation models are usually empirical, therefore there is an inherent difficulty in serving as carriers for knowledge acquisition and technology transfer, since their parameters have no physical meaning to facilitate verification of the dependence on the production conditions; in such a case, a 'black box' regression model or a neural network might be used to simply connect input-output characteristics. In several cases, scientific/mechanismic models may be proved valid, in which case parameter identification is required to find out the independent/explanatory variables and parameters, which each parameter depends on. This is a difficult task, since the phenomenological level at which each parameter is defined is different. In this paper, we have developed a methodological framework under the form of an algorithmic procedure to solve this problem. The main parts of this procedure are: (i) stratification of relevant knowledge in discrete layers immediately adjacent to the layer that the initial model under investigation belongs to, (ii) design of the ontology corresponding to these layers, (iii) elimination of the less relevant parts of the ontology by thinning, (iv) retrieval of the stronger interrelations between the remaining nodes within the revised ontological network, and (v) parameter identification taking into account the most influential interrelations revealed in (iv). The functionality of this methodology is demonstrated by quoting two representative case examples on wastewater treatment.

Uptake of Light Elements in Thin Metallic Films

NASA Astrophysics Data System (ADS)

Markwitz, Andreas; Waldschmidt, Mathias

Ion beam analysis was used to investigate the influence of substrate temperature on the inclusion of impurities during the deposition process of thin metallic single and double layers. Thin layers of gold and aluminium were deposited at different temperatures onto thin copper layers evaporated on silicon wafer substrates. The uptake of oxygen in the layers was measured using the highly sensitive non-resonant reaction 16O(d,p)170O at 920 keV. Nuclear reaction analysis was also used to probe for carbon and nitrogen with a limit of detection better than 20 ppm. Hydrogen depth profiles were measured using elastic recoil detection on the nanometer scale. Rutherford backscattering spectroscopy was used to determine the depth profiles of the metallic layers and to study diffusion processes. The combined ion beam analyses revealed an uptake of oxygen in the layers depending on the different metallic cap layers and the deposition temperature. Lowest oxygen values were measured for the Au/Cu layers, whereas the highest amount of oxygen was measured in Al/Cu layers deposited at 300°C. It was also found that with single copper layers produced at various temperatures, oxygen contamination occurred during the evaporation process and not afterwards, for example, as a consequence of the storage of the films under normal conditions for several days. Hydrogen, carbon, and nitrogen were found as impurities in the single and double layered metallic films, a finding that is in agreement with the measured oxidation behaviour of the metallic films.

Method of forming ultra thin film devices by vacuum arc vapor deposition

NASA Technical Reports Server (NTRS)

Schramm, Harry F. (Inventor)

2005-01-01

A method for providing an ultra thin electrical circuit integral with a portion of a surface of an object, including using a focal Vacuum Arc Vapor Deposition device having a chamber, a nozzle and a nozzle seal, depressing the nozzle seal against the portion of the object surface to create an airtight compartment in the chamber and depositing one or more ultra thin film layer(s) only on the portion of the surface of the object, the layers being of distinct patterns such that they form the circuit.

Non-destructive evaluation of nano-sized structure of thin film devices by using small angle neutron scattering.

PubMed

Shin, E J; Seong, B S; Choi, Y; Lee, J K

2011-01-01

Nano-sized multi-layers copper-doped SrZrO3, platinum (Pt) and silicon oxide (SiO2) on silicon substrates were prepared by dense plasma focus (DPF) device with the high purity copper anode tip and analyzed by using small angle neutron scattering (SANS) to establish a reliable method for the non-destructive evaluation of the under-layer structure. Thin film was well formed at the time-to-dip of 5 microsec with stable plasma of DPF. Several smooth intensity peaks were periodically observed when neutron beam penetrates the thin film with multi-layers perpendicularly. The platinum layer is dominant to intensity peaks, where the copper-doped SrZnO3 layer next to the platinum layer causes peak broadening. The silicon oxide layer has less effect on the SANS spectra due to its relative thick thickness. The SANS spectra shows thicknesses of platinum and copper-doped SrZnO3 layers as 53 and 25 nm, respectively, which are well agreement with microstructure observation.

Diffraction Efficiency of Thin Film Holographic Beam Steering Devices

NASA Technical Reports Server (NTRS)

Titus, Charles M.; Pouch, John; Nguyen, Hung; Miranda, Felix; Bos, Philip J.

2003-01-01

Dynamic holography has been demonstrated as a method for correcting aberrations in space deployable optics, and can also be used to achieve high-resolution beam steering in the same environment. In this paper, we consider some of the factors affecting the efficiency of these devices. Specifically, the effect on the efficiency of a highly collimated beam from the number of discrete phase steps per period is considered for a blazed thin film beam steering grating. The effect of the number of discrete phase steps per period on steering resolution is also considered. We also present some result of Finite-Difference Time-Domain (FDTD) calculations of light propagating through liquid crystal "blazed" gratings. Liquid crystal gratings are shown to spatially modulate both the phase and amplitude of the propagating light.

Layer-by-layer deposition of nanostructured CsPbBr3 perovskite thin films

NASA Astrophysics Data System (ADS)

Reshetnikova, A. A.; Matyushkin, L. B.; Andronov, A. A.; Sokolov, V. S.; Aleksandrova, O. A.; Moshnikov, V. A.

2017-11-01

Layer-by-layer deposition of nanostructured perovskites cesium lead halide thin films is described. The method of deposition is based on alternate immersion of the substrate in the precursor solutions or colloidal solution of nanocrystals and methyl acetate/lead nitrate solution using the device for deposition of films by SILAR and dip-coating techniques. An example of obtaining a photosensitive structure based on nanostructures of ZnO nanowires and layers of CsBbBr3 nanocrystals is also shown.

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

NASA Technical Reports Server (NTRS)

Moriarty, J. A.

1983-01-01

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Epitaxial thinning process

NASA Technical Reports Server (NTRS)

Siegel, C. M. (Inventor)

1984-01-01

A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

Electrochemical planarization

DOEpatents

Bernhardt, A.F.; Contolini, R.J.

1993-10-26

In a process for fabricating planarized thin film metal interconnects for integrated circuit structures, a planarized metal layer is etched back to the underlying dielectric layer by electropolishing, ion milling or other procedure. Electropolishing reduces processing time from hours to minutes and allows batch processing of multiple wafers. The etched back planarized thin film interconnect is flush with the dielectric layer. 12 figures.

Uniform-load and actuator influence functions of a thin or thick annular mirror: application to active mirror support optimization

NASA Astrophysics Data System (ADS)

Arnold, Luc

1996-03-01

Explicit analytical expressions are derived for the elastic deformation of a thin or thick mirror of uniform thickness and with a central hole. Thin-plate theory is used to derive the general influence function, caused by uniform and/or discrete loads, for a mirror supported by discrete points. No symmetry considerations of the locations of the points constrain the model. An estimate of the effect of the shear forces is added to the previous pure bending model to take into account the effect of the mirror thickness. Two particular cases of general influence are the uniform-load (equivalent to gravity in the case of a thin mirror) influence function for a ring support of k discrete points with k-fold symmetry. The influence of the size of the support pads is studied. A method for optimizing an active mirror cell is presented that couples the minimization of the gravity influence function with the optimization of the combined actuator influence functions to fit low-order aberrations. These low-spatial-frequency aberrations can be of elastic or optical origin. In the latter case they are due, for example, to great residual polishing errors corresponding to the soft polishing specifications relaxed for cost reductions. Results show that the correction range of the active cell can thus be noticeably enlarged, compared with an active cell designed as a passive cell, i.e., by minimizing only the deflection under gravitational loading. In the example treated here of the European Southern Observatory's New Technology Telescope I show that the active correction range can be enlarged by approximately 50% in the case of third-order astigmatic correction.

Use of screenings to produce HMA mixtures

DOT National Transportation Integrated Search

2002-10-01

Thin-lift hot mix asphalt (HMA) layers are utilized in almost every maintenance and rehabilitation application. These mix types require smaller maximum particle sizes than most conventional HMA surface layers. Although the primary functions of thin-l...

[Ascending one-dimensional thin layer chromatography in specific blood diagnosis (author's transl)].

PubMed

Bernardelli, B; Masotti, G

1976-01-01

A brief review of the literature on chromatography in forensic haematology is followed by a report of the results obtained by using ascending one-dimensional thin layer chromatography in specific blood diagnosis.

Flat-lying semiconductor-insulator interfacial layer in DNTT thin films.

PubMed

Jung, Min-Cherl; Leyden, Matthew R; Nikiforov, Gueorgui O; Lee, Michael V; Lee, Han-Koo; Shin, Tae Joo; Takimiya, Kazuo; Qi, Yabing

2015-01-28

The molecular order of organic semiconductors at the gate dielectric is the most critical factor determining carrier mobility in thin film transistors since the conducting channel forms at the dielectric interface. Despite its fundamental importance, this semiconductor-insulator interface is not well understood, primarily because it is buried within the device. We fabricated dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) thin film transistors by thermal evaporation in vacuum onto substrates held at different temperatures and systematically correlated the extracted charge mobility to the crystal grain size and crystal orientation. As a result, we identify a molecular layer of flat-lying DNTT molecules at the semiconductor-insulator interface. It is likely that such a layer might form in other material systems as well, and could be one of the factors reducing charge transport. Controlling this interfacial flat-lying layer may raise the ultimate possible device performance for thin film devices.

Bias of shear wave elasticity measurements in thin layer samples and a simple correction strategy.

PubMed

Mo, Jianqiang; Xu, Hao; Qiang, Bo; Giambini, Hugo; Kinnick, Randall; An, Kai-Nan; Chen, Shigao; Luo, Zongping

2016-01-01

Shear wave elastography (SWE) is an emerging technique for measuring biological tissue stiffness. However, the application of SWE in thin layer tissues is limited by bias due to the influence of geometry on measured shear wave speed. In this study, we investigated the bias of Young's modulus measured by SWE in thin layer gelatin-agar phantoms, and compared the result with finite element method and Lamb wave model simulation. The result indicated that the Young's modulus measured by SWE decreased continuously when the sample thickness decreased, and this effect was more significant for smaller thickness. We proposed a new empirical formula which can conveniently correct the bias without the need of using complicated mathematical modeling. In summary, we confirmed the nonlinear relation between thickness and Young's modulus measured by SWE in thin layer samples, and offered a simple and practical correction strategy which is convenient for clinicians to use.

AES study on the chemical composition of ferroelectric BaTiO3 thin films RF sputter-deposited on silicon

NASA Technical Reports Server (NTRS)

Dharmadhikari, V. S.; Grannemann, W. W.

1983-01-01

AES depth profiling data are presented for thin films of BaTiO3 deposited on silicon by RF sputtering. By profiling the sputtered BaTiO3/silicon structures, it was possible to study the chemical composition and the interface characteristics of thin films deposited on silicon at different substrate temperatures. All the films showed that external surface layers were present, up to a few tens of angstroms thick, the chemical composition of which differed from that of the main layer. The main layer had stable composition, whereas the intermediate film-substrate interface consisted of reduced TiO(2-x) oxides. The thickness of this intermediate layer was a function of substrate temperature. All the films showed an excess of barium at the interface. These results are important in the context of ferroelectric phenomena observed in BaTiO3 thin films.

Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 films.

PubMed

Kim, Seong Keun; Han, Sora; Jeon, Woojin; Yoon, Jung Ho; Han, Jeong Hwan; Lee, Woongkyu; Hwang, Cheol Seong

2012-09-26

Rutile structured Al-doped TiO(2) (ATO) and TiO(2) films were grown on bimetal electrodes (thin Ru/thick TiN, Pt, and Ir) for high-performance capacitors. The work function of the top Ru layer decreased on TiN and increased on Pt and Ir when it was thinner than ~2 nm, suggesting that the lower metal within the electrodes influences the work function of the very thin Ru layer. The use of the lower electrode with a high work function for bottom electrode eventually improves the leakage current properties of the capacitor at a very thin Ru top layer (≤2 nm) because of the increased Schottky barrier height at the interface between the dielectric and the bottom electrode. The thin Ru layer was necessary to achieve the rutile structured ATO and TiO(2) dielectric films.

Fuel cell with interdigitated porous flow-field

DOEpatents

Wilson, Mahlon S.

1997-01-01

A polymer electrolyte membrane (PEM) fuel cell is formed with an improved system for distributing gaseous reactants to the membrane surface. A PEM fuel cell has an ionic transport membrane with opposed catalytic surfaces formed thereon and separates gaseous reactants that undergo reactions at the catalytic surfaces of the membrane. The fuel cell may also include a thin gas diffusion layer having first and second sides with a first side contacting at least one of the catalytic surfaces. A macroporous flow-field with interdigitated inlet and outlet reactant channels contacts the second side of the thin gas diffusion layer for distributing one of the gaseous reactants over the thin gas diffusion layer for transport to an adjacent one of the catalytic surfaces of the membrane. The porous flow field may be formed from a hydrophilic material and provides uniform support across the backside of the electrode assembly to facilitate the use of thin backing layers.

Fuel cell with interdigitated porous flow-field

DOEpatents

Wilson, M.S.

1997-06-24

A polymer electrolyte membrane (PEM) fuel cell is formed with an improved system for distributing gaseous reactants to the membrane surface. A PEM fuel cell has an ionic transport membrane with opposed catalytic surfaces formed thereon and separates gaseous reactants that undergo reactions at the catalytic surfaces of the membrane. The fuel cell may also include a thin gas diffusion layer having first and second sides with a first side contacting at least one of the catalytic surfaces. A macroporous flow-field with interdigitated inlet and outlet reactant channels contacts the second side of the thin gas diffusion layer for distributing one of the gaseous reactants over the thin gas diffusion layer for transport to an adjacent one of the catalytic surfaces of the membrane. The porous flow field may be formed from a hydrophilic material and provides uniform support across the backside of the electrode assembly to facilitate the use of thin backing layers. 9 figs.

Improving the Teaching of Discrete-Event Control Systems Using a LEGO Manufacturing Prototype

ERIC Educational Resources Information Center

Sanchez, A.; Bucio, J.

2012-01-01

This paper discusses the usefulness of employing LEGO as a teaching-learning aid in a post-graduate-level first course on the control of discrete-event systems (DESs). The final assignment of the course is presented, which asks students to design and implement a modular hierarchical discrete-event supervisor for the coordination layer of a…

Electrical contacts to thin layers of Bi2Sr2CaCu2O8+δ

NASA Astrophysics Data System (ADS)

Suzuki, Shota; Taniguchi, Hiroki; Kawakami, Tsukasa; Cosset-Cheneau, Maxen; Arakawa, Tomonori; Miyasaka, Shigeki; Tajima, Setsuko; Niimi, Yasuhiro; Kobayashi, Kensuke

2018-05-01

Thin layers of Bi2Sr2CaCu2O8+δ (Bi2212) were fabricated using the mechanical exfoliation technique. Good electrical contacts to the thin Bi2212 films with low contact resistance were realized by depositing Ag and Au electrodes onto the Bi2212 films and annealing them with an oxygen flow at 350 °C for 30 min. We observed cross-section images of the Bi2212 thin film device using a transmission electron microscope to characterize the diffusion of Ag and Au atoms into the Bi2212 thin film.

Precise Control of the Number of Layers of Graphene by Picosecond Laser Thinning.

PubMed

Lin, Zhe; Ye, Xiaohui; Han, Jinpeng; Chen, Qiao; Fan, Peixun; Zhang, Hongjun; Xie, Dan; Zhu, Hongwei; Zhong, Minlin

2015-06-26

The properties of graphene can vary as a function of the number of layers (NOL). Controlling the NOL in large area graphene is still challenging. In this work, we demonstrate a picosecond (ps) laser thinning removal of graphene layers from multi-layered graphene to obtain desired NOL when appropriate pulse threshold energy is adopted. The thinning process is conducted in atmosphere without any coating and it is applicable for graphene films on arbitrary substrates. This method provides many advantages such as one-step process, non-contact operation, substrate and environment-friendly, and patternable, which will enable its potential applications in the manufacturing of graphene-based electronic devices.

Precise Control of the Number of Layers of Graphene by Picosecond Laser Thinning

NASA Astrophysics Data System (ADS)

Lin, Zhe; Ye, Xiaohui; Han, Jinpeng; Chen, Qiao; Fan, Peixun; Zhang, Hongjun; Xie, Dan; Zhu, Hongwei; Zhong, Minlin

2015-06-01

The properties of graphene can vary as a function of the number of layers (NOL). Controlling the NOL in large area graphene is still challenging. In this work, we demonstrate a picosecond (ps) laser thinning removal of graphene layers from multi-layered graphene to obtain desired NOL when appropriate pulse threshold energy is adopted. The thinning process is conducted in atmosphere without any coating and it is applicable for graphene films on arbitrary substrates. This method provides many advantages such as one-step process, non-contact operation, substrate and environment-friendly, and patternable, which will enable its potential applications in the manufacturing of graphene-based electronic devices.

Thin-film limit formalism applied to surface defect absorption.

PubMed

Holovský, Jakub; Ballif, Christophe

2014-12-15

The thin-film limit is derived by a nonconventional approach and equations for transmittance, reflectance and absorptance are presented in highly versatile and accurate form. In the thin-film limit the optical properties do not depend on the absorption coefficient, thickness and refractive index individually, but only on their product. We show that this formalism is applicable to the problem of ultrathin defective layer e.g. on a top of a layer of amorphous silicon. We develop a new method of direct evaluation of the surface defective layer and the bulk defects. Applying this method to amorphous silicon on glass, we show that the surface defective layer differs from bulk amorphous silicon in terms of light soaking.

Self-adaptive difference method for the effective solution of computationally complex problems of boundary layer theory

NASA Technical Reports Server (NTRS)

Schoenauer, W.; Daeubler, H. G.; Glotz, G.; Gruening, J.

1986-01-01

An implicit difference procedure for the solution of equations for a chemically reacting hypersonic boundary layer is described. Difference forms of arbitrary error order in the x and y coordinate plane were used to derive estimates for discretization error. Computational complexity and time were minimized by the use of this difference method and the iteration of the nonlinear boundary layer equations was regulated by discretization error. Velocity and temperature profiles are presented for Mach 20.14 and Mach 18.5; variables are velocity profiles, temperature profiles, mass flow factor, Stanton number, and friction drag coefficient; three figures include numeric data.

Axisymmetric bluff-body flow: A vortex solver for thin shells

NASA Astrophysics Data System (ADS)

Strickland, J. H.

1992-05-01

A method which is capable of solving the axisymmetric flow field over bluff bodies consisting of thin shells such as disks, partial spheres, rings, and other such shapes is presented in this report. The body may be made up of several shells whose edges are separated by gaps. The body may be moved axially according to arbitrary velocity time histories. In addition, the surfaces may possess axial and radial degrees of flexibility such that points on the surfaces may be allowed to move relative to each other according to some specified function of time. The surfaces may be either porous or impervious. The present solution technique is based on the axisymmetric vorticity transport equation. Physically, this technique simulates the generation of vorticity at body surfaces in the form of discrete ring vortices which are subsequently diffused and convected into the boundary layers and wake of the body. Relatively large numbers of vortices (1000 or more) are required to obtain good simulations. Since the direct calculation of perturbations from large numbers of ring vortices is computationally intensive, a fast multipole method was used to greatly reduce computer processing time. Several example calculations are presented for disks, disks with holes, hemispheres, and vented hemispheres. These results are compared with steady and unsteady experimental data.

Misfit-guided self-organization of anticorrelated Ge quantum dot arrays on Si nanowires.

PubMed

Kwon, Soonshin; Chen, Zack C Y; Kim, Ji-Hun; Xiang, Jie

2012-09-12

Misfit-strain guided growth of periodic quantum dot (QD) arrays in planar thin film epitaxy has been a popular nanostructure fabrication method. Engineering misfit-guided QD growth on a nanoscale substrate such as the small curvature surface of a nanowire represents a new approach to self-organized nanostructure preparation. Perhaps more profoundly, the periodic stress underlying each QD and the resulting modulation of electro-optical properties inside the nanowire backbone promise to provide a new platform for novel mechano-electronic, thermoelectronic, and optoelectronic devices. Herein, we report a first experimental demonstration of self-organized and self-limited growth of coherent, periodic Ge QDs on a one-dimensional Si nanowire substrate. Systematic characterizations reveal several distinctively different modes of Ge QD ordering on the Si nanowire substrate depending on the core diameter. In particular, Ge QD arrays on Si nanowires of around 20 nm diameter predominantly exhibit an anticorrelated pattern whose wavelength agrees with theoretical predictions. The correlated pattern can be attributed to propagation and correlation of misfit strain across the diameter of the thin nanowire substrate. The QD array growth is self-limited as the wavelength of the QDs remains unchanged even after prolonged Ge deposition. Furthermore, we demonstrate a direct kinetic transformation from a uniform Ge shell layer to discrete QD arrays by a postgrowth annealing process.

Fabrication of Organic Thin Film Transistors Using Layer-By-Layer Assembly (Preprint)

DTIC Science & Technology

2007-03-01

thin-film transistors ( TFTs ) have received considerable attention as a low- cost, light-weight, flexible alternative to traditional amorphous silicon...Previous studies have investigated the use of a number of materials for both the active layer and the gate dielectric in various TFT architectures. These...performance. Conjugated small molecules, such as pentacene, or polymers, such as poly(3- hexylthiophene), are commonly used as the active layer in organic TFT

Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

DOEpatents

Gessert, T.A.

1999-06-01

A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

NASA Astrophysics Data System (ADS)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Thin Carbon Layers on Nanostructured Silicon-Properties and Applications

NASA Astrophysics Data System (ADS)

Angelescu, Anca; Kleps, Irina; Miu, Mihaela; Simion, Monica; Bragaru, Adina; Petrescu, Stefana; Paduraru, Crina; Raducanu, Aurelia

Thin carbon layers such as silicon carbide (SiC) and diamond like carbon (DLC) layers on silicon, or on nanostructured silicon substrats were obtained by different methods. This paper is a review of our results in the areas of carbon layer microfabrication technologies and their properties related to different microsystem apllications. So, silicon membranes using a-SiC or DLC layers as etching mask, as well as silicon carbide membranes using a combined porous silicon — DLC structure were fabricated for sensor applications. A detailed evaluation of the field emission (FE) properties of these films was done to demonstrate their capability to be used in field emission devices. Carbon thin layers on nanostructured silicon samples were also investigated with respect to the living cell adhesion on these structures. The experiments indicate that the cell attachment on the surface of carbon coatings can be controlled by deposition parameters during the technological process.

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

DOEpatents

Gessert, Timothy A.

1999-01-01

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

Thin-film solar cell fabricated on a flexible metallic substrate

DOEpatents

Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

2006-05-30

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate

DOEpatents

Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

2006-05-30

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Direct charge carrier injection into Ga2O3 thin films using an In2O3 cathode buffer layer: their optical, electrical and surface state properties

NASA Astrophysics Data System (ADS)

Cui, W.; Zhao, X. L.; An, Y. H.; Guo, D. Y.; Qing, X. Y.; Wu, Z. P.; Li, P. G.; Li, L. H.; Cui, C.; Tang, W. H.

2017-04-01

Conductive Ga2O3 thin films with an In2O3 buffer layer have been prepared on c-plane sapphire substrates using a laser molecular beam epitaxy technique. The effects of the In2O3 buffer layer on the structure and optical, electrical and surface state properties of the Ga2O3 films have been studied. The change in conductivity of the thin films is attributed to different thicknesses of the In2O3 buffer layer, which determine the concentration of charge carriers injected into the upper Ga2O3 layer from the interface of the bilayer thin films. In addition, the increase in flat band voltage shift and capacitance values as the In2O3 buffer layer thickens are attributed to the increase in surface state density, which also contributes to the rapid shrinkage of the optical band gap of the Ga2O3. With transparency to visible light, high n-type conduction and the ability to tune the optical band gap and surface state density, we propose that Ga2O3/In2O3 bilayer thin film is an ideal n-type semiconductor for fabrication of transparent power devices, solar cell electrodes and gas sensors.

Synthesis of bimetallic nanostructures by nanosecond laser ablation of multicomponent thin films in water

NASA Astrophysics Data System (ADS)

Nikov, R. G.; Nedyalkov, N. N.; Atanasov, P. A.; Karashanova, D. B.

2018-03-01

The paper presents results on nanosecond laser ablation of thin films immersed in a liquid. The thin films were prepared by consecutive deposition of layers of different metals by thermal evaporation (first layer) and classical on-axis pulsed laser deposition (second layer); Ni/Au, Ag/Au and Ni/Ag thin films were thus deposited on glass substrates. The as-prepared films were then placed at the bottom of a glass vessel filled with double distilled water and irradiated by nanosecond laser pulses delivered by a Nd:YAG laser system at λ = 355 nm. This resulted in the formation of colloids of the thin films’ material. We also compared the processes of ablation of a bulk target and a thin film in the liquid by irradiating a Au target and a Au thin film by the same laser wavelength and fluence (λ = 355 nm, F = 5 J/cm2). The optical properties of the colloids were evaluated by optical transmittance measurements in the UV– VIS spectral range. Transmission electron microscopy was employed to estimate the particles’ size distribution.

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

NASA Astrophysics Data System (ADS)

Jeon, Jun-Young; Ha, Tae-Jun

2017-08-01

In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Organic Field Effect Transistor Using Amorphous Fluoropolymer as Gate Insulating Film

NASA Astrophysics Data System (ADS)

Kitajima, Yosuke; Kojima, Kenzo; Mizutani, Teruyoshi; Ochiai, Shizuyasu

Organic field effect transistors are fabricated by the active layer of Regioregular poly (3-hexylthiophene-2,5-diy)(P3HT) thin film. CYTOP thin film made from Amorphous Fluoropolymer and fabricated by spin-coating is adopted to a gate dielectric layer on Polyethylenenaphthalate (PEN) thin film that is the substrate of an organic field effect transistor. The surface morphology and molecular orientation of P3HT thin films is observed by atomic force microscope (AFM) and X-Ray diffractometer (XRD). Grains are observed on the CYTOP thin film via an AFM image and the P3HT molecule is oriented perpendicularly on the CYTOP thin film. Based on the performance of the organic field effect transistor, the carrier mobility is 0.092 cm2/Vs, the ON/OFF ratio is 7, and the threshold voltage is -12 V. The ON/OFF ratio is relatively low and to improve On/Off ratio, the CYTOP/Polyimide double gate insulating layer is adopted to OFET.

Thin film absorber for a solar collector

DOEpatents

Wilhelm, William G.

1985-01-01

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Organic photovoltaic cells utilizing ultrathin sensitizing layer

DOEpatents

Rand, Barry P [Princeton, NJ; Forrest, Stephen R [Princeton, NJ

2011-05-24

A photosensitive device includes a series of organic photoactive layers disposed between two electrodes. Each layer in the series is in direct contact with a next layer in the series. The series is arranged to form at least one donor-acceptor heterojunction, and includes a first organic photoactive layer comprising a first host material serving as a donor, a thin second organic photoactive layer comprising a second host material disposed between the first and a third organic photoactive layer, and the third organic photoactive layer comprising a third host material serving as an acceptor. The first, second, and third host materials are different. The thin second layer serves as an acceptor relative to the first layer or as a donor relative to the third layer.

In-depth evolution of chemical states and sub-10-nm-resolution crystal orientation mapping of nanograins in Ti(5 nm)/Au(20 nm)/Cr(3 nm) tri-layer thin films

NASA Astrophysics Data System (ADS)

Zhu, Xiaoli; Todeschini, Matteo; Bastos da Silva Fanta, Alice; Liu, Lintao; Jensen, Flemming; Hübner, Jörg; Jansen, Henri; Han, Anpan; Shi, Peixiong; Ming, Anjie; Xie, Changqing

2018-09-01

The applications of Au thin films and their adhesion layers often suffer from a lack of sufficient information about the chemical states of adhesion layers and about the high-lateral-resolution crystallographic morphology of Au nanograins. Here, we demonstrate the in-depth evolution of the chemical states of adhesive layers at the interfaces and the crystal orientation mapping of gold nanograins with a lateral resolution of less than 10 nm in a Ti/Au/Cr tri-layer thin film system. Using transmission electron microscopy, the variation in the interdiffusion at Cr/Au and Ti/Au interfaces was confirmed. From X-ray photoelectron spectroscopy (XPS) depth profiling, the chemical states of Cr, Au and Ti were characterized layer by layer, suggesting the insufficient oxidation of the adhesive layers. At the interfaces the Au 4f peaks shift to higher binding energies and this behavior can be described by a proposed model based on electron reorganization and substrate-induced final-state neutralization in small Au clusters supported by the partially oxidized Ti layer. Utilizing transmission Kikuchi diffraction (TKD) in a scanning electron microscope, the crystal orientation of Au nanograins between two adhesion layers was non-destructively characterized with sub-10 nm spatial resolution. The results provide nanoscale insights into the Ti/Au/Cr thin film system and contribute to our understanding of its behavior in nano-optic and nano-electronic devices.

Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode.

PubMed

Chen, Kun-Neng; Yang, Cheng-Fu; Wu, Chia-Ching; Chen, Yu-Hsin

2017-02-24

We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (α-IGZO/Ag/α-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron microscopy measurements of the triple-layer structures revealed that the thicknesses of the Ag layers ranged from 13 to 41 nm. The thickness of the Ag layer had a large effect on the electrical and optical properties of the electrodes. The optimum thickness of the Ag metal thin film could be evaluated according to the optical transmittance, electrical conductivity, and figure of merit of the electrode. This study demonstrates that the α-IGZO/Ag/α-IGZO triple-layer transparent electrode can be fabricated with low sheet resistance (4.2 Ω/□) and high optical transmittance (88.1%) at room temperature without postannealing processing on the deposited thin films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tesfaye, Meron; MacDonald, Andrew N.; Dudenas, Peter J.

Local gas transport limitation attributed to the ionomer thin-film in the catalyst layer is a major deterrent to widespread commercialization of polymer-electrolyte fuel cells. So far functionality and limitations of these thin-films have been assumed identical in the anode and cathode. In this study, Nafion ionomer thin-films on platinum(Pt) support were exposed to H 2 and air as model schemes, mimicking anode and cathode catalyst layers. Findings indicate decreased swelling, increased densification of ionomer matrix, and increased humidity-induced aging rates in reducing environment, compared to oxidizing and inert environments. Observed phenomenon could be related to underlying Pt-gas interaction dictating Pt-ionomermore » behavior. Presented results could have significant implications about the disparate behavior of ionomer thin-film in anode and cathode catalyst layers.« less

Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics

NASA Astrophysics Data System (ADS)

Sainju, Deepak

Many modern optical and electronic devices, including photovoltaic devices, consist of multilayered thin film structures. Spectroscopic ellipsometry (SE) is a critically important characterization technique for such multilayers. SE can be applied to measure key parameters related to the structural, optical, and electrical properties of the components of multilayers with high accuracy and precision. One of the key advantages of this non-destructive technique is its capability of monitoring the growth dynamics of thin films in-situ and in real time with monolayer level precision. In this dissertation, the techniques of SE have been applied to study the component layer materials and structures used as back-reflectors and as the transparent contact layers in thin film photovoltaic technologies, including hydrogenated silicon (Si:H), copper indium-gallium diselenide (CIGS), and cadmium telluride (CdTe). The component layer materials, including silver and both intrinsic and doped zinc oxide, are fabricated on crystalline silicon and glass substrates using magnetron sputtering techniques. These thin films are measured in-situ and in real time as well as ex-situ by spectroscopic ellipsometry in order to extract parameters related to the structural properties, such as bulk layer thickness and surface roughness layer thickness and their time evolution, the latter information specific to real time measurements. The index of refraction and extinction coefficient or complex dielectric function of a single unknown layer can also be obtained from the measurement versus photon energy. Applying analytical expressions for these optical properties versus photon energy, parameters that describe electronic transport, such as electrical resistivity and electron scattering time, can be extracted. The SE technique is also performed as the sample is heated in order to derive the effects of annealing on the optical properties and derived electrical transport parameters, as well as the intrinsic temperature dependence of these properties and parameters. One of the major achievements of this dissertation research is the characterization of the thickness and optical properties of the interface layer formed between the silver and zinc oxide layers in a back-reflector structure used in thin film photovoltaics. An understanding of the impact of these thin film material properties on solar cell device performance has been complemented by applying reflectance and transmittance spectroscopy as well as simulations of cell performance.

Cu2ZnSnSe4 Thin Film Solar Cell with Depth Gradient Composition Prepared by Selenization of Sputtered Novel Precursors.

PubMed

Lai, Fang-I; Yang, Jui-Fu; Chen, Wei-Chun; Kuo, Shou-Yi

2017-11-22

In this study, we proposed a new method for the synthesis of the target material used in a two stage process for preparation of a high quality CZTSe thin film. The target material consisting of a mixture of Cu x Se and Zn x Sn 1-x alloy was synthesized, providing a quality CZTSe precursor layer for highly efficient CZTSe thin film solar cells. The CZTSe thin film can be obtained by annealing the precursor layers through a 30 min selenization process under a selenium atmosphere at 550 °C. The CZTSe thin films prepared by using the new precursor thin film were investigated and characterized using X-ray diffraction, Raman scattering, and photoluminescence spectroscopy. It was found that diffusion of Sn occurred and formed the CTSe phase and Cu x Se phase in the resultant CZTSe thin film. By selective area electron diffraction transmission electron microscopy images, the crystallinity of the CZTSe thin film was verified to be single crystal. By secondary ion mass spectroscopy measurements, it was confirmed that a double-gradient band gap profile across the CZTSe absorber layer was successfully achieved. The CZTSe solar cell with the CZTSe absorber layer consisting of the precursor stack exhibited a high efficiency of 5.46%, high short circuit current (J SC ) of 37.47 mA/cm 2 , open circuit voltage (V OC ) of 0.31 V, and fill factor (F.F.) of 47%, at a device area of 0.28 cm 2 . No crossover of the light and dark current-voltage (I-V) curves of the CZTSe solar cell was observed, and also, no red kink was observed under red light illumination, indicating a low defect concentration in the CZTSe absorber layer. Shunt leakage current with a characteristic metal/CZTSe/metal leakage current model was observed by temperature-dependent I-V curves, which led to the discovery of metal incursion through the CdS buffer layer on the CZTSe absorber layer. This leakage current, also known as space charge-limited current, grew larger as the measurement temperature increased and completely overwhelmed the diode current at a measurement temperature of 200 °C. This is due to interlayer diffusion of metal that increases the shunt leakage current and decreases the efficiency of the CZTSe thin film solar cells.

Characterization of crystallographic properties of thin films using X-ray diffraction

NASA Astrophysics Data System (ADS)

Zoo, Yeongseok

2007-12-01

Silver (Ag) has been recognized as one of promising candidates in Ultra-Large Scale Integrated (ULSI) applications in that it has the lowest bulk electrical resistivity of all pure metals and higher electromigration resistance than other interconnect materials. However, low thermal stability on Silicon Dioxide (Si02) at high temperatures (e.g., agglomeration) is considered a drawback for the Ag metallization scheme. Moreover, if a thin film is attached on a substrate, its properties may differ significantly from that of the bulk, since the properties of thin films can be significantly affected by the substrate. In this study, the Coefficient of Thermal Expansion (CTE) and texture evolution of Ag thin films on different substrates were characterized using various analytical techniques. The experimental results showed that the CTE of the Ag thin film was significantly affected by underlying substrate and the surface roughness of substrate. To investigate the alloying effect for Ag meatallization, small amounts of Copper (Cu) were added and characterized using theta-2theta X-ray Diffraction (XRD) scan and pole figure analysis. These XRD techniques are useful for investigating the primary texture of a metal film, (111) in this study, which (111) is the notation of a specific plane in the orthogonal coordinate system. They revealed that the (111) textures of Ag and Ag(Cu) thin films were enhanced with increasing temperature. Comparison of texture profiles between Ag and Ag(Cu) thin films showed that Cu additions enhanced (111) texture in Ag thin films. Accordingly, the texture enhancement in Ag thin films by Cu addition was discussed. Strained Silicon-On-Insulator (SSOI) is being considered as a potential substrate for Complementary Metal-Oxide-Semiconductor (CMOS) technology since the induced strain results in a significant improvement in device performance. High resolution X-ray diffraction (XRD) techniques were used to characterize the perpendicular and parallel strains in SSOI layers. XRD diffraction profiles generated from the crystalline SSOI layer provided a direct measurement of the layer's strain components. In addition, it has demonstrated that the rotational misalignment between the layer and the substrate can be incorporated within the biaxial strain equations for epitaxial layers. Based on these results, the strain behavior of the SSOI layer and the relation between strained Si and SiO2 layers are discussed for annealed samples.

Optimization of rotational speed for growing BaFe12O19 thin films using spin coating

NASA Astrophysics Data System (ADS)

Budiawanti, S.; Soegijono, B.; Mudzakir, I.; Suharno, Fadillah, L.

2017-07-01

Barium ferrite (BaFe12O19, BaM) thin films were fabricated by the spin coating of precursors obtained by using a sol-gel method. The effects of the rotational speed on the spin-coating process for growing a BaM thin film were investigated in this study. Coated films were heat-deposited at different rotational speeds ranging from 2000 to 4000 rpm, while the number of layers was set to nine. Further, the effect of the number of layers on the growth of BaM thin films was discussed. For this purpose, we take the layers number 1 to 12 and take the constant rotational speed of 3000 rpm. All the film were characterized using X-Ray diffraction, Scanning Electron microscope, and Energy-dispersive X-Ray spectroscopy and Vibrating Sample Magnetometer. It was found that by increasing the rotational speed the amount of material deposited on the Si substrate decreased. The measured grain size of the BaM thin film was nearly similar for three three different rotational speeds. However, the grain size was found to increase the number of layers.

GaN ultraviolet p-i-n photodetectors with enhanced deep ultraviolet quantum efficiency

NASA Astrophysics Data System (ADS)

Wang, Guosheng; Xie, Feng; Wang, Jun; Guo, Jin

2017-10-01

GaN ultraviolet (UV) p-i-n photodetectors (PDs) with a thin p-AlGaN/GaN contact layer are designed and fabricated. The PD exhibits a low dark current density of˜7 nA/cm2 under -5 V, and a zero-bias peak responsivity of ˜0.16 A/W at 360 nm, which corresponds to a maximum quantum efficiency of 55%. It is found that, in the wavelength range between 250 and 365 nm, the PD with thin p-AlGaN/GaN contact layer exhibits enhanced quantum efficiency especially in a deep-UV wavelength range, than that of the control PD with conventional thin p-GaN contact layer. The improved quantum efficiency of the PD with thin p-AlGaN/GaN contact layer in the deep-UV wavelength range is mainly attributed to minority carrier reflecting properties of thin p-AlGaN/GaN heterojunction which could reduce the surface recombination loss of photon-generated carriers and improve light current collection efficiency.

Receptivity to Unsteady Disturbances at the Trailing Edge in a Finite-Width Mixing Layer Flow.

NASA Astrophysics Data System (ADS)

Rabchuk, James Allen

1995-01-01

A theoretical study of the receptivity to harmonic disturbances at the trailing edge of a finite-width mixing layer has been carried out. The unsteady Kutta condition at the trailing edge has been reexamined at the vorticity scale of the steady mixing layer profile, and the underlying physical mechanism of this condition explained. The receptivity problem of harmonic forcing at the trailing edge is shown to reduce to an initial-value problem for the downstream mixing layer or wake. A linear coupling term for the response field amplitude is derived which is proportional to the square root of the Strouhal number and the difference in the gradient of the forcing pressure field tangential to the plate near the trailing edge. An initial-value problem is then solved for an inviscid, incompressible mixing layer with a piecewise linear velocity profile leaving the trailing edge of a flat plate, subject to harmonic forcing. The Wiener-Hopf technique is used to solve for the stream function of the response field over a range of forcing frequencies and mean flow velocities. The solutions are shown to agree with previous solutions for infinitesimally thin shear layers from Bechert, 1988 and Orszag and Crow, 1970, in the limit that the Strouhal number relative to the mixing layer thickness, S, is small. In addition, solutions are obtained for moderate values of S, for which the mixing layer is most unstable. It is shown that for increasing S, the initial amplitudes of the discrete modes of instability decrease like 1 over S and then level off, while the neutrally stable mode of response is increasingly amplified. It is also shown that the overall phase of the response is nearly independent of S, except at a cross-stream position where the phase shifts by 180 degrees and the amplitude of the response goes to zero, which moves from the low to the high speed flow as S increases.

Elaboration and Characterization of TiO2 and Study of the Influence of The Number of Thin Films on the Methylene Blue Adsorption Rate

NASA Astrophysics Data System (ADS)

Madoui, Karima; Medjahed, Aicha; Hamici, Melia; Djamila, Abdi; Boudissa, Mokhtar

2018-05-01

Thin films of titanium oxide (TiO2) deposited on glass substrates were fabricated by using the sol-gel route. The realization of these thin layers was made using the dip-coating technique with a solution of titanium isopropoxyde as a precursor. The samples prepared with different numbers of deposited layers were annealed at 400 ° C for 2 hours. The main purposes of this work were investigations of both the effect of the number of thin TiO2 layers on the crystal structure of the anatase form first and, their ability to adsorb the solution of methylene blue in order to make colored filters from a photocatalytic process. The deposited titanium-oxide layers were characterized by using various techniques: namely, X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM) and UV-Visible spectrometry. The result obtained by using the XRD technique showed the appearance of an anatase phase, as was confirmed by using Raman spectroscopy. The AFM surface analysis allowed the surface topography to be characterized and the surface roughness to be measured, which increased with increasing number of layers. The UV-Visible spectra showed that the TiO2 films had a good transmittance varying from 65% to 95% according to the number of layers. The gap energy varied as a function of the number of deposited layers. The as deposited TiO2 layers were tested as a photocatalyst towards the adsorption of methylene blue dye. The results obtained during this study showed that the adsorption capacity varied according to the number of deposited thin layers and the exposing duration to ultraviolet (UV) light. The maximum absorption rate of the dye was obtained for the two-layer sample. Seventy-two hours of irradiation allowed the adsorption intensity of the dye to be maximized for two-layer films.

Ultraviolet emission enhancement in ZnO thin films modified by nanocrystalline TiO2

NASA Astrophysics Data System (ADS)

Zheng, Gaige; Lu, Xi; Qian, Liming; Xian, Fenglin

2017-05-01

In this study, nanocrystalline TiO2 modified ZnO thin films were prepared by electron beam evaporation. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), UV-visible spectroscopy, fluorescence spectroscopy, respectively. The composition of the films was examined by energy dispersive X-ray spectroscopy (EDX). The photoluminescent spectrum shows that the pure ZnO thin film exhibits an ultraviolet (UV) emission peak and a strong green emission band. Surface analysis indicates that the ZnO thin film contains many oxygen vacancy defects on the surface. After the ZnO thin film is modified by the nanocrystalline TiO2 layer, the UV emission of ZnO is largely enhanced and the green emission is greatly suppressed, which suggests that the surface defects such as oxygen vacancies are passivated by the TiO2 capping layer. As for the UV emission enhancement of the ZnO thin film, the optimized thickness of the TiO2 capping layer is ∼16 nm. When the thickness is larger than 16 nm, the UV emission of the ZnO thin film will decrease because the TiO2 capping layer absorbs most of the excitation energy. The UV emission enhancement in the nanocrystalline TiO2 modified ZnO thin film can be attributed to surface passivation and flat band effect.

Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu; Quesnel, David J.; Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627

2015-12-21

Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical propertiesmore » of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the films reduces the activation volume for yielding.« less

Spatially and momentum resolved energy electron loss spectra from an ultra-thin PrNiO{sub 3} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinyanjui, M. K., E-mail: michael.kinyanjui@uni-ulm.de; Kaiser, U.; Benner, G.

2015-05-18

We present an experimental approach which allows for the acquisition of spectra from ultra-thin films at high spatial, momentum, and energy resolutions. Spatially and momentum (q) resolved electron energy loss spectra have been obtained from a 12 nm ultra-thin PrNiO{sub 3} layer using a nano-beam electron diffraction based approach which enabled the acquisition of momentum resolved spectra from individual, differently oriented nano-domains and at different positions of the PrNiO{sub 3} thin layer. The spatial and wavelength dependence of the spectral excitations are obtained and characterized after the analysis of the experimental spectra using calculated dielectric and energy loss functions. The presentedmore » approach makes a contribution towards obtaining momentum-resolved spectra from nanostructures, thin film, heterostructures, surfaces, and interfaces.« less

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

NASA Astrophysics Data System (ADS)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low dielectric loss (0.007), and low leakage current (<2×10-8 A/cm2 at 100 kV/cm) were achieved for BST thin film capacitors with Cu-based electrodes.

Using atomistic simulations to model cadmium telluride thin film growth

NASA Astrophysics Data System (ADS)

Yu, Miao; Kenny, Steven D.

2016-03-01

Cadmium telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to conduct research on how defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. On-the-fly kinetic Monte Carlo technique is used to simulate the CdTe thin film growth on the (1 1 1) surfaces. The results show that on the (1 1 1) surfaces the growth mechanisms on surfaces which are terminated by Cd or Te are quite different, regardless of the deposition energy (0.1∼ 10 eV). On the Te-terminated (1 1 1) surface the deposited clusters first form a single mixed species layer, then the Te atoms in the mixed layer moved up to form a new layer. Whilst on the Cd-terminated (1 1 1) surface the new Cd and Te layers are formed at the same time. Such differences are probably caused by stronger bonding between ad-atoms and surface atoms on the Te layer than on the Cd layer.

Marangoni-Benard Convection in a Evaporating Liquid Thin Layer

NASA Technical Reports Server (NTRS)

Chai, An-Ti; Zhang, Nengli

1996-01-01

Marangoni-Benard convection in evaporating liquid thin layers has been investigated through flow visualization and temperature profile measurement. Twelve liquids, namely ethyl alcohol, methanol, chloroform, acetone, cyclohexane, benzine, methylene chloride, carbon tetrachloride, ethyl acetate, n-pentane, silicone oil (0.65 cSt.), and freon-113, were tested and convection patterns in thin layers of these samples were observed. Comparison among these tested samples shows that some liquids are sensitive to surface contamination from aluminum powder but some are not. The latter is excellent to be used for the investigation of surface-tension driven convection through visualization using the tracer. Two sample liquids, alcohol and freon-113 were particularly selected for systematic study. It was found that the wavelength of Benard cells would not change with thickness of the layer when it evaporates at room temperature. Special attention was focused on cases in which a liquid layer was cooled from below, and some interesting results were obtained. Convection patterns were recorded during the evaporation process and the patterns at certain time frame were compared. Benard cells were observed in thin layers with a nonlinear temperature profile and even with a zero or positive temperature gradient. Wavelength of the cells was found to increase as the evaporation progressed.

Solid oxide fuel cell having monolithic core

DOEpatents

Ackerman, John P.; Young, John E.

1984-01-01

A solid oxide fuel cell for electrochemically combining fuel and oxidant for generating galvanic output, wherein the cell core has an array of electrolyte and interconnect walls that are substantially devoid of any composite inert materials for support. Instead, the core is monolithic, where each electrolyte wall consists of thin layers of cathode and anode materials sandwiching a thin layer of electrolyte material therebetween, and each interconnect wall consists of thin layers of the cathode and anode materials sandwiching a thin layer of interconnect material therebetween. The electrolyte walls are arranged and backfolded between adjacent interconnect walls operable to define a plurality of core passageways alternately arranged where the inside faces thereof have only the anode material or only the cathode material exposed. Means direct the fuel to the anode-exposed core passageways and means direct the oxidant to the cathode-exposed core passageway; and means also direct the galvanic output to an exterior circuit. Each layer of the electrolyte and interconnect materials is of the order of 0.002-0.01 cm thick; and each layer of the cathode and anode materials is of the order of 0.002-0.05 cm thick.

Exciton-dominated dielectric function of atomically thin MoS 2 films

DOE PAGES

Yu, Yiling; Yu, Yifei; Cai, Yongqing; ...

2015-11-24

We systematically measure the dielectric function of atomically thin MoS 2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5–7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5–7 layers thick but turns to increase with the layer number for thicker films. We show that this is because the excitonic effect is very strong in the thin MoS 2 films and its contribution to the dielectricmore » function may dominate over the contribution of the band structure. We also extract the value of layer-dependent exciton binding energy and Bohr radius in the films by fitting the experimental results with an intuitive model. The dominance of excitonic effects is in stark contrast with what reported at conventional materials whose dielectric functions are usually dictated by band structures. Lastly, the knowledge of the dielectric function may enable capabilities to engineer the light-matter interactions of atomically thin MoS 2 films for the development of novel photonic devices, such as metamaterials, waveguides, light absorbers, and light emitters.« less

High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

NASA Astrophysics Data System (ADS)

Rajanikant, Ray Jayminkumar

The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a pressure of 10-5 mbar. The thickness of the film was kept 1 mum for the solar cell device preparation. Rapid Thermal Annealing (RTA) is carried out of CIGS thin film at 500 °C for 2 minutes in the argon atmosphere. Annealing process mainly improves the grain growth of the CIGS and, hence the surface roughness, which is essential for a multilayered semiconductor structure. Thin layer of n-type highly resistive cadmium sulphide (CdS), generally known as a "buffer" layer, is deposited on CIGS layer by thermal and flash evaporation method at the substrate temperature of 100 °C. The CdS thin film plays a crucial role in the formation of the p-n junction and thus the solar cell device performance. The effect of CdS film substrate temperature ranging from 50 °C to 200 °C is observed. At the 100 °C substrate temperature, CdS thin film shows the near to 85 % of transmission in the visible region and resistivity of the order of greater then 20 x 109 Ocm, which are the essential characteristics of buffer layer. The bi-layer structure of ZnO, containing 70 nm i-ZnO and 500 nm aluminum (Al) doped ZnO, act as a transparent front-contact for CIGS thin film solar cell. These layers were deposited using RF magnetron sputtering. i-ZnO thin film acts as an insulating layer, which prevents the recombination of the photo-generated carries and also minimizes the lattice miss match defects between CdS and Al-ZnO. The resistivity of iZnO and Al-ZnO is of the order of 1012 Ocm and 10-4 Ocm, respectively. Al-ZnO thin films act as transparent conducting top electrode having transparency of about 85 % in the visible region. On Al-ZnO layer the finger-type grid pattern of silver (Ag), 200 nm thick, is deposited for the collection of photo-generated carriers. The thin film based multilayered structure Mo / CIGS / CdS / i-ZnO / Al-ZnO / Ag grid of CIGS solar cell is grown one by one on a single glass substrate. As-prepared CIGS solar cell device shows a minute photovoltaic effect. For the further improvement of the cell we have varied the thickness of the buffer layer i.e. CdS. In addition, the deposition of CdS is carried out using flash evaporation method to improve the CIGS/CdS junction. Heat soak pulses of about 200 °C are also applied for 20 sec for the further upgrading the junction. To protect the CIGS/CdS junction from the high-energy sputtered particles of ZnO, a fine mesh of stainless steel is placed just before the sample holder to enhance the performance of the solar cell. The influence of the thickness of iZnO and CdS has been checked. The maximum V oe and Jsc of about 138 mV and 1.3 mA/cm2 , respectively, are achieved using flash evaporated CIGS layer and flash evaporated CdS thin film. Further improvement of current performance can be done either by adopting some other fabrication method to obtain a denser CIGS absorber layer or replacing the CdS layer with some other efficient buffer layer.

Multiloculated solitary (unicameral) bone cyst in a young dog.

PubMed

Roode, Sarah C; Shive, Heather R; Hoorntje, Willemijn; Bernard, Jennifer; Stowe, Devorah M; Pool, Roy R; Grindem, Carol B

2018-05-21

A 20-month-old female spayed Staffordshire Terrier (22.3 kg) presented to the Orthopedic Surgery Service at North Carolina State University Veterinary Teaching Hospital for evaluation of a 6-week history of toe-touching to nonweight-bearing lameness in the right hind limb. Radiographs of the right stifle revealed a multiloculated lytic lesion of the distal femur, with a large open lytic zone centrally, numerous osseous septations peripherally, and focal areas of cortical thinning and loss. An aspirate of the right distal femoral lesion yielded mildly cloudy serosanguineous fluid. Cytologic examination of the fluid revealed a pleomorphic population of discrete cells that exhibited marked anisocytosis and anisokaryosis and a variable nucleus to cytoplasm (N:C) ratio, which were interpreted as probable neoplastic cells, with few macrophages, and evidence of hemorrhage. Given the clinical signs of pain, lesion size, and concern for malignant neoplasia, amputation of the right hind limb was performed. Histologically, the lesion had undulating walls 1-3 mm thick with a continuous outer layer of dense fibrous tissue and an inner layer composed of reactive cancellous bone with no cortical compacta remaining. Remnants of thin fibrous or fibro-osseous septa projected from the bony wall into the cyst lumen. The final histologic diagnosis was a benign multiloculated solitary (unicameral) bone cyst of the distal right femur. Based on the histopathologic findings, it was speculated that the cells identified on cytology were a mixture of developing osteoclasts, osteoblasts, endothelial, and stromal cells. This is the first report describing the cytologic examination of a solitary bone cyst in veterinary medicine. © 2018 American Society for Veterinary Clinical Pathology.

A new multi-layer approach for progressive damage simulation in composite laminates based on isogeometric analysis and Kirchhoff-Love shells. Part II: impact modeling

NASA Astrophysics Data System (ADS)

Pigazzini, M. S.; Bazilevs, Y.; Ellison, A.; Kim, H.

2017-11-01

In this two-part paper we introduce a new formulation for modeling progressive damage in laminated composite structures. We adopt a multi-layer modeling approach, based on isogeometric analysis, where each ply or lamina is represented by a spline surface, and modeled as a Kirchhoff-Love thin shell. Continuum damage mechanics is used to model intralaminar damage, and a new zero-thickness cohesive-interface formulation is introduced to model delamination as well as permitting laminate-level transverse shear compliance. In Part I of this series we focus on the presentation of the modeling framework, validation of the framework using standard Mode I and Mode II delamination tests, and assessment of its suitability for modeling thick laminates. In Part II of this series we focus on the application of the proposed framework to modeling and simulation of damage in composite laminates resulting from impact. The proposed approach has significant accuracy and efficiency advantages over existing methods for modeling impact damage. These stem from the use of IGA-based Kirchhoff-Love shells to represent the individual plies of the composite laminate, while the compliant cohesive interfaces enable transverse shear deformation of the laminate. Kirchhoff-Love shells give a faithful representation of the ply deformation behavior, and, unlike solids or traditional shear-deformable shells, do not suffer from transverse-shear locking in the limit of vanishing thickness. This, in combination with higher-order accurate and smooth representation of the shell midsurface displacement field, allows us to adopt relatively coarse in-plane discretizations without sacrificing solution accuracy. Furthermore, the thin-shell formulation employed does not use rotational degrees of freedom, which gives additional efficiency benefits relative to more standard shell formulations.

A new multi-layer approach for progressive damage simulation in composite laminates based on isogeometric analysis and Kirchhoff-Love shells. Part I: basic theory and modeling of delamination and transverse shear

NASA Astrophysics Data System (ADS)

Bazilevs, Y.; Pigazzini, M. S.; Ellison, A.; Kim, H.

2017-11-01

In this two-part paper we introduce a new formulation for modeling progressive damage in laminated composite structures. We adopt a multi-layer modeling approach, based on Isogeometric Analysis (IGA), where each ply or lamina is represented by a spline surface, and modeled as a Kirchhoff-Love thin shell. Continuum Damage Mechanics is used to model intralaminar damage, and a new zero-thickness cohesive-interface formulation is introduced to model delamination as well as permitting laminate-level transverse shear compliance. In Part I of this series we focus on the presentation of the modeling framework, validation of the framework using standard Mode I and Mode II delamination tests, and assessment of its suitability for modeling thick laminates. In Part II of this series we focus on the application of the proposed framework to modeling and simulation of damage in composite laminates resulting from impact. The proposed approach has significant accuracy and efficiency advantages over existing methods for modeling impact damage. These stem from the use of IGA-based Kirchhoff-Love shells to represent the individual plies of the composite laminate, while the compliant cohesive interfaces enable transverse shear deformation of the laminate. Kirchhoff-Love shells give a faithful representation of the ply deformation behavior, and, unlike solids or traditional shear-deformable shells, do not suffer from transverse-shear locking in the limit of vanishing thickness. This, in combination with higher-order accurate and smooth representation of the shell midsurface displacement field, allows us to adopt relatively coarse in-plane discretizations without sacrificing solution accuracy. Furthermore, the thin-shell formulation employed does not use rotational degrees of freedom, which gives additional efficiency benefits relative to more standard shell formulations.

Parametric instability of spinning elastic rings excited by fluctuating space-fixed stiffnesses

NASA Astrophysics Data System (ADS)

Liu, Chunguang; Cooley, Christopher G.; Parker, Robert G.

2017-07-01

This study investigates the vibration of rotating elastic rings that are dynamically excited by an arbitrary number of space-fixed discrete stiffnesses with periodically fluctuating stiffnesses. The rotating, elastic ring is modeled using thin-ring theory with radial and tangential deformations. Primary and combination instability regions are determined in closed-form using the method of multiple scales. The ratio of peak-to-peak fluctuation to average discrete stiffness is used as the perturbation parameter, so the resulting perturbation analysis is not limited to small mean values of discrete stiffnesses. The natural frequencies and vibration modes are determined by discretizing the governing equations using Galerkin's method. Results are demonstrated for compliant gear applications. The perturbation results are validated by direct numerical integration of the equations of motion and Floquet theory. The bandwidths of the instability regions correlate with the fractional strain energy stored in the discrete stiffnesses. For rings with multiple discrete stiffnesses, the phase differences between them can eliminate large amplitude response under certain conditions.

Method of forming contacts for a back-contact solar cell

DOEpatents

Manning, Jane

2013-07-23

Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.

Observations of metal concentrations in E-region sporadic thin layers using incoherent-scatter radar

NASA Astrophysics Data System (ADS)

Suzuki, Nobuhiro

This thesis has used incoherent-scatter radar data from the facility at Sondrestrom, Greenland to determine the ion mass values inside thin sporadic-E layers in the lower ionosphere. Metallic positively-charged ions of meteoric origin are deposited in the earth's upper atmosphere over a height range of about 85-120 km. Electric fields and neutral-gas (eg N2, O, O2) winds at high latitudes may produce convergent ion dynamics that results in the re-distribution of the background altitude distribution of the ions to form thin (1-3 km) high-density layers that are detectable with radar. A large database of experimental radar observations has been processed to determine ion mass values inside these thin ion layers. The range resolution of the radar was 600 meters that permitted mass determinations at several altitude steps within the layers. Near the lower edge of the layers the ion mass values were in the range 20-25 amu while at the top portion of the layers the mass values were generally in the range 30-40 amu. The numerical values are consistent with in-situ mass spectrometer data obtained by other researchers that suggest these layers are mainly composed of a mixture or Mg +, Si+, and Fe + ions. The small tendency for heavier ions to reside at the top portion of the layers is consistent with theory. The results have also found new evidence for the existence of complex-shaped multiple layers; the examples studied suggest similar ion mass values in different layers that in some cases are separated in altitude by several km.

The effects of GaN nanocolumn arrays and thin SixNy buffer layers on the morphology of GaN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates

NASA Astrophysics Data System (ADS)

Shubina, K. Yu; Pirogov, E. V.; Mizerov, A. M.; Nikitina, E. V.; Bouravleuv, A. D.

2018-03-01

The effects of GaN nanocolumn arrays and a thin SixNy layer, used as buffer layers, on the morphology of GaN epitaxial layers are investigated. Two types of samples with different buffer layers were synthesized by PA-MBE. The morphology of the samples was characterized by SEM. The crystalline quality of the samples was assessed by XRD. The possibility of synthesis of continuous crystalline GaN layers on Si(111) substrates without the addition of other materials such as aluminum nitride was demonstrated.

Thin layer asphaltic concrete density measuring using nuclear gages.

DOT National Transportation Integrated Search

1989-03-01

A Troxler 4640 thin layer nuclear gage was evaluated under field conditions to determine if it would provide improved accuracy of density measurements on asphalt overlays of 1-3/4 and 2 inches in thickness. Statistical analysis shows slightly improve...

High-performance thin layer chromatography to assess pharmaceutical product quality.

PubMed

Kaale, Eliangiringa; Manyanga, Vicky; Makori, Narsis; Jenkins, David; Michael Hope, Samuel; Layloff, Thomas

2014-06-01

To assess the sustainability, robustness and economic advantages of high-performance thin layer chromatography (HPTLC) for quality control of pharmaceutical products. We compared three laboratories where three lots of cotrimoxazole tablets were assessed using different techniques for quantifying the active ingredient. The average assay relative standard deviation for the three lots was 1.2 with a range of 0.65-2.0. High-performance thin layer chromatography assessments are yielding valid results suitable for assessing product quality. The local pharmaceutical manufacturer had evolved the capacity to produce very high quality products. © 2014 John Wiley & Sons Ltd.

[Thin layer agar represents a cost-effective alternative for the rapid diagnosis of multi-drug resistant tuberculosis].

PubMed

Hernández-Sarmiento, José M; Martínez-Negrete, Milton A; Castrillón-Velilla, Diana M; Mejía-Espinosa, Sergio A; Mejía-Mesa, Gloria I; Zapata-Fernández, Elsa M; Rojas-Jiménez, Sara; Marín-Castro, Andrés E; Robledo-Restrepo, Jaime A

2014-01-01

Using cost-benefit analysis for comparing the thin-layer agar culture method to the standard multiple proportion method used in diagnosing multidrug-resistant tuberculosis (MDR TB). A cost-benefit evaluation of two diagnostic tests was made at the Corporación para Investigaciones Biológicas (CIB) in Medellín, Colombia. 100 patients were evaluated; 10.8% rifampicin resistance and 14.3% isoniazid resistance were found. A computer-based decision tree model was used for cost-effectiveness analysis (Treeage Pro); the thin-layer agar culture method was most cost-effective, having 100% sensitivity, specificity and predictive values for detecting rifampicin and isoniazid resistance. The multiple proportion method value was calculated as being US$ 71 having an average 49 day report time compared to US$ 18 and 14 days for the thin-layer agar culture method. New technologies have been developed for diagnosing tuberculosis which are apparently faster and more effective; their operating characteristics must be evaluated as must their effectiveness in terms of cost-benefit. The present study established that using thin-layer agar culture was cheaper, equally effective and could provide results more quickly than the traditional method. This implies that a patient could receive MDR TB treatment more quickly.

Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

NASA Astrophysics Data System (ADS)

Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

2018-06-01

In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

Granular materials interacting with thin flexible rods

NASA Astrophysics Data System (ADS)

Neto, Alfredo Gay; Campello, Eduardo M. B.

2017-04-01

In this work, we develop a computational model for the simulation of problems wherein granular materials interact with thin flexible rods. We treat granular materials as a collection of spherical particles following a discrete element method (DEM) approach, while flexible rods are described by a large deformation finite element (FEM) rod formulation. Grain-to-grain, grain-to-rod, and rod-to-rod contacts are fully permitted and resolved. A simple and efficient strategy is proposed for coupling the motion of the two types (discrete and continuum) of materials within an iterative time-stepping solution scheme. Implementation details are shown and discussed. Validity and applicability of the model are assessed by means of a few numerical examples. We believe that robust, efficiently coupled DEM-FEM schemes can be a useful tool to the simulation of problems wherein granular materials interact with thin flexible rods, such as (but not limited to) bombardment of grains on beam structures, flow of granular materials over surfaces covered by threads of hair in many biological processes, flow of grains through filters and strainers in various industrial segregation processes, and many others.

Development of buffer layer structure for epitaxial growth of (100)/(001)Pb(Zr,Ti)O3-based thin film on (111)Si wafer

NASA Astrophysics Data System (ADS)

Hayasaka, Takeshi; Yoshida, Shinya; Tanaka, Shuji

2017-07-01

This paper reports on the development of a novel buffer layer structure, (100)SrRuO3/(100)LaNiO3/(111)Pt/(111)CeO2, for the epitaxial growth of a (100)/(001)-oriented Pb(Zr,Ti)O3 (PZT)-based thin film on a (111)Si wafer. (111)Pt and (111)CeO2 were epitaxially grown on (111)Si straightforwardly. Then, the crystal orientation was forcibly changed from (111) to (100) at the LaNiO3 layer owing to its strong (100)-self-orientation property, which enabled the cube-on-cube epitaxial growth of the subsequent (100)SrRuO3 layer and preferentially (100)/(001)-oriented PZT-based thin film. The PZT-based epitaxial thin films were comprehensively characterized in terms of the crystallinity, in-plane epitaxial relationships, piezoelectricity, and so forth. This buffer layer structure for the epitaxial growth of PZT can be applied to piezoelectric micro-electro-mechanical systems (MEMS) vibrating ring gyroscopes.

Direct numerical simulation of turbulent Rayleigh-Bénard convection in a vertical thin disk

NASA Astrophysics Data System (ADS)

Xu, Wei; Wang, Yin; He, Xiao-Zhou; Yik, Hiu-Fai; Wang, Xiao-Ping; Schumacher, Jorg; Tong, Penger

2017-11-01

We report a direct numerical simulation (DNS) of turbulent Rayleigh-Bénard convection in a thin vertical disk with a high-order spectral element method code NEK5000. An unstructured mesh is used to adapt the turbulent flow in the thin disk and to ensure that the mesh sizes satisfy the refined Groetzbach criterion and a new criterion for thin boundary layers proposed by Shishkina et al. The DNS results for the mean and variance temperature profiles in the thermal boundary layer region are found to be in good agreement with the predictions of the new boundary layer models proposed by Shishkina et al. and Wang et al.. Furthermore, we numerically calculate the five budget terms in the boundary layer equation, which are difficult to measure in experiment. The DNS results agree well with the theoretical predictions by Wang et al. Our numerical work thus provides a strong support for the development of a common framework for understanding the effect of boundary layer fluctuations. This work was supported in part by Hong Kong Research Grants Council.

High density nonmagnetic cobalt in thin films

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Singh, Surendra; Basu, Saibal; Roy, Anupam; Movva, Hema C. P.; Lauter, V.; Satpati, B.; Dev, B. N.

2018-05-01

Recently high density (HD) nonmagnetic cobalt has been discovered in a nanoscale cobalt thin film, grown on Si(111) single crystal. This form of cobalt is not only nonmagnetic but also superconducting. These promising results have encouraged further investigations of the growth of the nonmagnetic (NM) phase of cobalt. In the original investigation, the cobalt film had a natural cobalt oxide at the top. We have investigated whether the growth of HD NM cobalt layers in the thin film depends on (i) a capping layer on the cobalt film, (ii) the thickness of the cobalt film and (iii) the nature of the substrate on which the cobalt film is grown. The results of such investigations indicate that for cobalt films capped with a thin gold layer, and for various film thicknesses, HD NM cobalt layers are formed. However, instead of a Si substrate, when the cobalt films are grown on oxide substrates, such as silicon oxide or cobalt oxide, HD NM cobalt layers are not formed. The difference is attributed to the nature—crystalline or amorphous—of the substrate.

Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

NASA Astrophysics Data System (ADS)

Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

2017-05-01

Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

Electrically tunable infrared metamaterial devices

DOEpatents

Brener, Igal; Jun, Young Chul

2015-07-21

A wavelength-tunable, depletion-type infrared metamaterial optical device is provided. The device includes a thin, highly doped epilayer whose electrical permittivity can become negative at some infrared wavelengths. This highly-doped buried layer optically couples with a metamaterial layer. Changes in the transmission spectrum of the device can be induced via the electrical control of this optical coupling. An embodiment includes a contact layer of semiconductor material that is sufficiently doped for operation as a contact layer and that is effectively transparent to an operating range of infrared wavelengths, a thin, highly doped buried layer of epitaxially grown semiconductor material that overlies the contact layer, and a metallized layer overlying the buried layer and patterned as a resonant metamaterial.

Thin film solar cell including a spatially modulated intrinsic layer

DOEpatents

Guha, Subhendu; Yang, Chi-Chung; Ovshinsky, Stanford R.

1989-03-28

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Pulsed laser deposition of functionalized Mg-Al layered double hydroxide thin films

NASA Astrophysics Data System (ADS)

Vlad, A.; Birjega, R.; Tirca, I.; Matei, A.; Mardare, C. C.; Hassel, A. W.; Nedelcea, A.; Dinescu, M.; Zavoianu, R.

2018-02-01

In this paper, magnesium-aluminium layered double hydroxide (LDH) has been functionalized with sodium dodecyl sulfate (DS) and deposited as thin film by pulsed laser deposition (PLD). Mg, Al-LDH powders were prepared by co-precipitation and used as reference material. Intercalation of DS as an anionic surfactant into the LDHs host layers has been prepared in two ways: co-precipitation (P) and reconstruction (R). DS intercalation occurred in LDH powder via both preparation methods. The films deposited via PLD, in particular at 532 and 1064 nm, preserve the organic intercalated layered structure of the targets prepared from these powders. The results reveal the ability of proposed deposition technique to produce functional composite organo-modified LDHs thin films.

Fabrication and Structural Characterization of an Ultrathin Film of a Two-Dimensional-Layered Metal-Organic Framework, {Fe(py)2[Ni(CN)4]} (py = pyridine).

PubMed

Sakaida, Shun; Haraguchi, Tomoyuki; Otsubo, Kazuya; Sakata, Osami; Fujiwara, Akihiko; Kitagawa, Hiroshi

2017-07-17

We report the fabrication and characterization of the first example of a tetracyanonickelate-based two-dimensional-layered metal-organic framework, {Fe(py) 2 Ni(CN) 4 } (py = pyridine), thin film. To fabricate a nanometer-sized thin film, we utilized the layer-by-layer method, whereby a substrate was alternately soaked in solutions of the structural components. Surface X-ray studies revealed that the fabricated film was crystalline with well-controlled growth directions both parallel and perpendicular to the substrate. In addition, lattice parameter analysis indicated that the crystal system is found to be close to higher symmetry by being downsized to a thin film.

Treatment of ice cover and other thin elastic layers with the parabolic equation method.

PubMed

Collins, Michael D

2015-03-01

The parabolic equation method is extended to handle problems involving ice cover and other thin elastic layers. Parabolic equation solutions are based on rational approximations that are designed using accuracy constraints to ensure that the propagating modes are handled properly and stability constrains to ensure that the non-propagating modes are annihilated. The non-propagating modes are especially problematic for problems involving thin elastic layers. It is demonstrated that stable results may be obtained for such problems by using rotated rational approximations [Milinazzo, Zala, and Brooke, J. Acoust. Soc. Am. 101, 760-766 (1997)] and generalizations of these approximations. The approach is applied to problems involving ice cover with variable thickness and sediment layers that taper to zero thickness.

Biotechnology Conference: Diagnostics 󈨛 Held in Cambridge, England on 10 and 11 December 1987.

DTIC Science & Technology

1988-05-25

settings. 1 -hour culture confirmation test for herpes (ColorGene DNA hybridization test for HSV confirmation). This test NEW AMPEROMETRIC BIOSENSORS...I Thin Layer Technology: Monolayers to Multi Thin Films ................. 1 Single-Step Immunoassay Systems...if this thin-layer pr•ccss~is probe technolh,,y. and biosensors. The aim of the con- demonstrated in Figure 1 . which shows the disposition of ference

Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer

NASA Astrophysics Data System (ADS)

Thao, Pham Ngoc; Yoshida, Shinya; Tanaka, Shuji

2017-12-01

This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7 µm, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ˜250 as a dielectric constants ɛr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.

High Performance Thin Layer Chromatography.

ERIC Educational Resources Information Center

Costanzo, Samuel J.

1984-01-01

Clarifies where in the scheme of modern chromatography high performance thin layer chromatography (TLC) fits and why in some situations it is a viable alternative to gas and high performance liquid chromatography. New TLC plates, sample applications, plate development, and instrumental techniques are considered. (JN)

Evidence for an extraterrestrial impact 12,900 years ago thatcontributed to megafaunal extinctions and the Younger Dryas cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Firestone, R.B.; West, A.; Kennett, J.P.

2007-08-06

A carbon-rich black layer, dating to ~;12.9 ka, has beenpreviously identified at ~;50 Clovis-age sites across North America andappears contemporaneous with the abrupt onset of Younger Dryas (YD)cooling. The in situ bones of extinct Pleistocene megafauna and Clovistool assemblages occur below this black layer but not within or above it.Causes for the extinctions, the YD cooling, and the termination of Clovisculture have long been controversial. In this paper, we provide evidencefor an extraterrestrial (ET) impact event at ?12.9 ka, which, wehypothesize, caused abrupt environmental changes that contributed to YDcooling, major ecological reorganization, broad-scale extinctions, andrapid human behavioral shifts at themore » end of the Clovis Period. Clovis-agesites in North American are overlain by a thin, discrete layer withvarying peak abundances of: (1) magnetic grains with iridium, (2)magnetic microspherules (3) charcoal, (4) soot, (5) carbon spherules, (6)glass-like carbon, and (7) fullerenes with ET helium, all of which areevidence for an ET impact and associated biomass burning at ~;12.9 ka.This layer also extends throughout at least fifteen Carolina Bays, whichare unique, elliptical wetlands, oriented to thenorthwest across theAtlantic Coastal Plain. We propose that one or more large, low-density ETobjects exploded over northern North America, partially destabilizing theLaurentide Ice Sheet and triggering YD cooling. The shock wave, thermalpulse, and event-related environmental effects (e.g., extensive biomassburning, food limitations) contributed to the end-Pleistocene megafaunalextinctions and adaptive shifts among PaleoAmericans in NorthAmerica.« less

Exploring substrate/ionomer interaction under oxidizing and reducing environments

DOE PAGES

Tesfaye, Meron; MacDonald, Andrew N.; Dudenas, Peter J.; ...

2018-02-09

Local gas transport limitation attributed to the ionomer thin-film in the catalyst layer is a major deterrent to widespread commercialization of polymer-electrolyte fuel cells. So far functionality and limitations of these thin-films have been assumed identical in the anode and cathode. In this study, Nafion ionomer thin-films on platinum(Pt) support were exposed to H 2 and air as model schemes, mimicking anode and cathode catalyst layers. Findings indicate decreased swelling, increased densification of ionomer matrix, and increased humidity-induced aging rates in reducing environment, compared to oxidizing and inert environments. Observed phenomenon could be related to underlying Pt-gas interaction dictating Pt-ionomermore » behavior. Presented results could have significant implications about the disparate behavior of ionomer thin-film in anode and cathode catalyst layers.« less

Method for synthesizing thin film electrodes

DOEpatents

Boyle, Timothy J [Albuquerque, NM

2007-03-13

A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

Electrochemical Atomic Layer Epitaxy of Thin Film CdSe

NASA Astrophysics Data System (ADS)

Pham, L.; Kaleida, K.; Happek, U.; Mathe, M. K.; Vaidyanathan, R.; Stickney, J. L.; Radevic, M.

2002-10-01

Electrochemical atomic layer epitaxy (EC-ALE) is a current developmental technique for the fabrication of compound semiconductor thin films. The deposition of elements making up the compound utilizes surface limited reactions where the potential is less than that required for bulk growth. This growth method offers mono-atomic layer control, allowing the deposition of superlattices with sharp interfaces. Here we report on the EC-ALE formation of CdSe thin films on Au and Cu substrates using an automated flow cell system. The band gap was measured using IR absorption and photoconductivity and found to be consistent with the literature value of 1.74 eV at 300K and 1.85 eV at 20K. The stoichiometry of the thin film was confirmed with electron microprobe analysis and x-ray diffraction.

Characterization of Softmagnetic Thin Layers Using Barkhausen Noise Microscopy

DTIC Science & Technology

2001-04-01

magnetoresistive (MR) sensors softmagnetic thin layer systems are used. Optimal performance of these layers requires homogeneous magnetic properties , especially a...Sendust, used in inductive sensors and nanocrystalline NiFe , used in MR-sensors. In quality correlations to Barkhausen noise parameters were found...Brillouin scattering are frequently used. An important issue is the influence of mechanical properties , e.g. residual stress on the magnetic performance

Flexible Thin Metal Film Thermal Sensing System

NASA Technical Reports Server (NTRS)

Thomsen, Donald Laurence (Inventor)

2012-01-01

A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

Optical sensors and multisensor arrays containing thin film electroluminescent devices

DOEpatents

Aylott, Jonathan W.; Chen-Esterlit, Zoe; Friedl, Jon H.; Kopelman, Raoul; Savvateev, Vadim N.; Shinar, Joseph

2001-12-18

Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

Preliminary results on complex ceramic layers deposition by atmospheric plasma spraying

NASA Astrophysics Data System (ADS)

Florea, Costel; Bejinariu, Costicǎ; Munteanu, Corneliu; Cimpoeşu, Nicanor

2017-04-01

In this article we obtain thin layers from complex ceramic powders using industrial equipment based on atmospheric plasma spraying. We analyze the influence of the substrate material roughness on the quality of the thin layers using scanning electron microscopy (SEM) and X-ray dispersive energy analyze (EDAX). Preliminary results present an important dependence between the surface state and the structural and chemical homogeneity.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Simulation of light in-coupling through an aperture probe to investigate light propagation in a thin layer for opto-electronic application

NASA Astrophysics Data System (ADS)

Ermes, Markus; Lehnen, Stephan; Cao, Zhao; Bittkau, Karsten; Carius, Reinhard

2015-06-01

In thin optoelectronic devices, like organic light emitting diodes (OLED) or thin-film solar cells (TFSC), light propagation, which is initiated by a local point source, is of particular importance. In OLEDs, light is generated in the layer by the luminescence of single molecules, whereas in TFSCs, light is coupled into the devices by scattering at small surface features. In both applications, light propagation within the active layers has a significant impact on the optical device performance. Scanning near-field optical microscopy (SNOM) using aperture probes is a powerful tool to investigate this propagation with a high spatial resolution. Dual-probe SNOM allows simulating the local light generation by an illumination probe as well as the detection of the light propagated through the layer. In our work, we focus on the light propagation in thin silicon films as used in thin-film silicon solar cells. We investigate the light-in-coupling from an illuminating probe via rigorous solution of Maxwell's equations using a Finite-Difference Time-Domain approach, especially to gain insight into the light distribution inside a thin layer, which is not accessible in the experiment. The structures investigated include at and structured surfaces with varying illumination positions and wavelengths. From the performed simulations, we define a "spatial sensitivity" which is characteristic for the local structure and illumination position. This quantity can help to identify structures which are beneficial as well as detrimental to absorption inside the investigated layer. We find a strong dependence of the spatial sensitivity on the surface structure as well as both the absorption coefficient and the probe position. Furthermore, we investigate inhomogeneity in local light propagation resulting from different surface structures and illumination positions.

Relationship of Estimated SHIV Acquisition Time Points During the Menstrual Cycle and Thinning of Vaginal Epithelial Layers in Pigtail Macaques.

PubMed

Kersh, Ellen N; Ritter, Jana; Butler, Katherine; Ostergaard, Sharon Dietz; Hanson, Debra; Ellis, Shanon; Zaki, Sherif; McNicholl, Janet M

2015-12-01

HIV acquisition in the female genital tract remains incompletely understood. Quantitative data on biological HIV risk factors, the influence of reproductive hormones, and infection risk are lacking. We evaluated vaginal epithelial thickness during the menstrual cycle in pigtail macaques (Macaca nemestrina). This model previously revealed increased susceptibility to vaginal infection during and after progesterone-dominated periods in the menstrual cycle. Nucleated and nonnucleated (superficial) epithelial layers were quantitated throughout the menstrual cycle of 16 macaques. We examined the relationship with previously estimated vaginal SHIVSF162P3 acquisition time points in the cycle of 43 different animals repeatedly exposed to low virus doses. In the luteal phase (days 17 to cycle end), the mean vaginal epithelium thinned to 66% of mean follicular thickness (days 1-16; P = 0.007, Mann-Whitney test). Analyzing 4-day segments, the epithelium was thickest on days 9 to 12 and thinned to 31% thereof on days 29 to 32, with reductions of nucleated and nonnucleated layers to 36% and 15% of their previous thickness, respectively. The proportion of animals with estimated SHIV acquisition in each cycle segment correlated with nonnucleated layer thinning (Pearson r = 0.7, P < 0.05, linear regression analysis), but not nucleated layer thinning (Pearson r = 0.6, P = 0.15). These data provide a detailed picture of dynamic cycle-related changes in the vaginal epithelium of pigtail macaques. Substantial thinning occurred in the superficial, nonnucleated layer, which maintains the vaginal microbiome. The findings support vaginal tissue architecture as susceptibility factor for infection and contribute to our understanding of innate resistance to SHIV infection.

Effects of image charges, interfacial charge discreteness, and surface roughness on the zeta potential of spherical electric double layers.

PubMed

Gan, Zecheng; Xing, Xiangjun; Xu, Zhenli

2012-07-21

We investigate the effects of image charges, interfacial charge discreteness, and surface roughness on spherical electric double layer structures in electrolyte solutions with divalent counterions in the setting of the primitive model. By using Monte Carlo simulations and the image charge method, the zeta potential profile and the integrated charge distribution function are computed for varying surface charge strengths and salt concentrations. Systematic comparisons were carried out between three distinct models for interfacial charges: (1) SURF1 with uniform surface charges, (2) SURF2 with discrete point charges on the interface, and (3) SURF3 with discrete interfacial charges and finite excluded volume. By comparing the integrated charge distribution function and the zeta potential profile, we argue that the potential at the distance of one ion diameter from the macroion surface is a suitable location to define the zeta potential. In SURF2 model, we find that image charge effects strongly enhance charge inversion for monovalent interfacial charges, and strongly suppress charge inversion for multivalent interfacial charges. For SURF3, the image charge effect becomes much smaller. Finally, with image charges in action, we find that excluded volumes (in SURF3) suppress charge inversion for monovalent interfacial charges and enhance charge inversion for multivalent interfacial charges. Overall, our results demonstrate that all these aspects, i.e., image charges, interfacial charge discreteness, their excluding volumes, have significant impacts on zeta potentials of electric double layers.

Fabrication technology of CNT-Nickel Oxide based planar pseudocapacitor for MEMS and NEMS

NASA Astrophysics Data System (ADS)

Lebedev, E. A.; Kitsyuk, E. P.; Gavrilin, I. M.; Gromov, D. G.; Gruzdev, N. E.; Gavrilov, S. A.; Dronov, A. A.; Pavlov, A. A.

2015-11-01

Fabrication technology of planar pseudocapacitor (PsC) based on carbon nanotube (CNT) forest, synthesized using plasma enhanced chemical vapor deposition (PECVD) method, covered with thin nickel oxide layer deposited by successive ionic layer adsorption and reaction (SILAR) method, is demonstrated. Dependences of deposited oxide layers thickness on device specific capacities is studied. It is shown that pseudocapacity of nickel oxide thin layer increases specific capacity of the CNT's based device up to 2.5 times.

Durable thin film coatings for reflectors used in low earth orbit

NASA Technical Reports Server (NTRS)

Mcclure, Donald J.

1989-01-01

This paper discusses the properties of thin film coatings used to provide a durable reflective surface for solar concentrators used in the solar dynamic system designed for the Space Station. The material system to be used consists of an adhesion promotion layer, a silver reflective layer, and a protective layer of aluminum oxide and silicon dioxide. The performance characteristics of this system are described and compared to those of several alternative systems which use aluminum as the reflective layer.

Effects of discrete-electrode arrangement on traveling-wave electroosmotic pumping

NASA Astrophysics Data System (ADS)

Liu, Weiyu; Shao, Jinyou; Ren, Yukun; Wu, Yupan; Wang, Chunhui; Ding, Haitao; Jiang, Hongyuan; Ding, Yucheng

2016-09-01

Traveling-wave electroosmotic (TWEO) pumping arises from the action of an imposed traveling-wave (TW) electric field on its own induced charge in the diffuse double layer, which is formed on top of an electrode array immersed in electrolyte solutions. Such a traveling field can be merely realized in practice by a discrete electrode array upon which the corresponding voltages of correct phase are imposed. By employing the theory of linear and weakly nonlinear double-layer charging dynamics, a physical model incorporating both the nonlinear surface capacitance of diffuse layer and Faradaic current injection is developed herein in order to quantify the changes in TWEO pumping performance from a single-mode TW to discrete electrode configuration. Benefiting from the linear analysis, we investigate the influence of using discrete electrode array to create the TW signal on the resulting fluid motion, and several approaches are suggested to improve the pumping performance. In the nonlinear regime, our full numerical analysis considering the intervening isolation spacing indicates that a practical four-phase discrete electrode configuration of equal electrode and gap width exhibits stronger nonlinearity than expected from the idealized pump applied with a single-mode TW in terms of voltage-dependence of the ideal pumping frequency and peak flow rate, though it has a much lower pumping performance. For model validation, pumping of electrolytes by TWEO is achieved over a confocal spiral four-phase electrode array covered by an insulating microchannel; measurement of flow velocity indicates the modified nonlinear theory considering moderate Faradaic conductance is indeed a more accurate physical description of TWEO. These results offer useful guidelines for designing high-performance TWEO microfluidic pumps with discrete electrode array.

Temperature dependence of LRE-HRE-TM thin films

NASA Astrophysics Data System (ADS)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

Preventing Thin Film Dewetting via Graphene Capping.

PubMed

Cao, Peigen; Bai, Peter; Omrani, Arash A; Xiao, Yihan; Meaker, Kacey L; Tsai, Hsin-Zon; Yan, Aiming; Jung, Han Sae; Khajeh, Ramin; Rodgers, Griffin F; Kim, Youngkyou; Aikawa, Andrew S; Kolaczkowski, Mattew A; Liu, Yi; Zettl, Alex; Xu, Ke; Crommie, Michael F; Xu, Ting

2017-09-01

A monolayer 2D capping layer with high Young's modulus is shown to be able to effectively suppress the dewetting of underlying thin films of small organic semiconductor molecule, polymer, and polycrystalline metal, respectively. To verify the universality of this capping layer approach, the dewetting experiments are performed for single-layer graphene transferred onto polystyrene (PS), semiconducting thienoazacoronene (EH-TAC), gold, and also MoS 2 on PS. Thermodynamic modeling indicates that the exceptionally high Young's modulus and surface conformity of 2D capping layers such as graphene and MoS 2 substantially suppress surface fluctuations and thus dewetting. As long as the uncovered area is smaller than the fluctuation wavelength of the thin film in a dewetting process via spinodal decomposition, the dewetting should be suppressed. The 2D monolayer-capping approach opens up exciting new possibilities to enhance the thermal stability and expands the processing parameters for thin film materials without significantly altering their physical properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advanced Si solid phase crystallization for vertical channel in vertical NANDs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sangsoo; Son, Yong-Hoon; Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung 445-701

The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM) when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers weremore » shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.« less

Irradiation of industrial enzyme preparations. II. Characterization of fungal pectinase by thin-layer isoelectric focusing and gel filtration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delincee, H.

1978-01-01

Industrial dry fungal pectinase from A. niger was irradiated with doses (up to 1 Mrad) of /sup 60/Co-..gamma..rays effective in reducing microbial contamination. The pectinase was characterized by thin-layer isoelectric focusing and gel filtration in order to detect possible radiation-induced structural alterations. Thin-layer isoelectric focusing revealed at least fifteen multiple forms with pectin-depolymerizing activity, with isoelectric points in the range pH 4.5 to 7. Heterogeneity of pectinesterase was also demonstrated, the main band occurring around pH 4. By thin-layer gel filtration the molecular weight of the pectin-depolymerase was estimated as being about 36,000, and that of pectinesterase as about 33,000.more » Radiation-induced changes of the charge properties or molecular size of the irradiated pectinase preparation were not observed. The feasibility of using ionizing radiation for the reduction of microbial contamination of industrial enzyme preparations looks promising.« less

Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films

NASA Astrophysics Data System (ADS)

Schüffelgen, Peter; Rosenbach, Daniel; Neumann, Elmar; Stehno, Martin P.; Lanius, Martin; Zhao, Jialin; Wang, Meng; Sheehan, Brendan; Schmidt, Michael; Gao, Bo; Brinkman, Alexander; Mussler, Gregor; Schäpers, Thomas; Grützmacher, Detlev

2017-11-01

Topological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3-4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al.

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

NASA Technical Reports Server (NTRS)

Cohen, R. A.; Wheeler, R. K. (Inventor)

1974-01-01

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

Oxide-based materials by atomic layer deposition

NASA Astrophysics Data System (ADS)

Godlewski, Marek; Pietruszka, Rafał; Kaszewski, Jarosław; Witkowski, Bartłomiej S.; Gierałtowska, Sylwia; Wachnicki, Łukasz; Godlewski, Michał M.; Slonska, Anna; Gajewski, Zdzisław

2017-02-01

Thin films of wide band-gap oxides grown by Atomic Layer Deposition (ALD) are suitable for a range of applications. Some of these applications will be presented. First of all, ALD-grown high-k HfO2 is used as a gate oxide in the electronic devices. Moreover, ALD-grown oxides can be used in memory devices, in transparent transistors, or as elements of solar cells. Regarding photovoltaics (PV), ALD-grown thin films of Al2O3 are already used as anti-reflection layers. In addition, thin films of ZnO are tested as replacement of ITO in PV devices. New applications in organic photovoltaics, electronics and optoelectronics are also demonstrated Considering new applications, the same layers, as used in electronics, can also find applications in biology, medicine and in a food industry. This is because layers of high-k oxides show antibacterial activity, as discussed in this work.

Method for the manufacture of phase shifting masks for EUV lithography

DOEpatents

Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.; Barty, Anton

2006-04-04

A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.

Thin film buried anode battery

DOEpatents

Lee, Se-Hee [Lakewood, CO; Tracy, C Edwin [Golden, CO; Liu, Ping [Denver, CO

2009-12-15

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode

PubMed Central

Chen, Kun-Neng; Yang, Cheng-Fu; Wu, Chia-Ching; Chen, Yu-Hsin

2017-01-01

We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (α-IGZO/Ag/α-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron microscopy measurements of the triple-layer structures revealed that the thicknesses of the Ag layers ranged from 13 to 41 nm. The thickness of the Ag layer had a large effect on the electrical and optical properties of the electrodes. The optimum thickness of the Ag metal thin film could be evaluated according to the optical transmittance, electrical conductivity, and figure of merit of the electrode. This study demonstrates that the α-IGZO/Ag/α-IGZO triple-layer transparent electrode can be fabricated with low sheet resistance (4.2 Ω/□) and high optical transmittance (88.1%) at room temperature without postannealing processing on the deposited thin films. PMID:28772586

Effect of swift heavy ion irradiation on structural and opto-electrical properties of bi-layer CdS-Bi2S3 thin films prepared by solution growth technique at room temperature

NASA Astrophysics Data System (ADS)

Shaikh, Shaheed U.; Siddiqui, Farha Y.; Desale, Deepali J.; Ghule, Anil V.; Singh, Fouran; Kulriya, Pawan K.; Sharma, Ramphal

2015-01-01

CdS-Bi2S3 bi-layer thin films have been deposited by chemical bath deposition method on Indium Tin Oxide glass substrate at room temperature. The as-deposited thin films were annealed at 250 °C in an air atmosphere for 1 h. An air annealed thin film was irradiated using Au9+ ions with the energy of 120 MeV at fluence 5×1012 ions/cm2 using tandem pelletron accelerator. The irradiation induced modifications were studied using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Raman spectroscopy, UV spectroscopy and I-V characteristics. XRD study reveals that the as-deposited thin films were nanocrystalline in nature. The decrease in crystallite size, increase in energy band gap and resistivity were observed after irradiation. Results are explained on the basis of energy deposited by the electronic loss after irradiation. The comparative results of as-deposited, air annealed and irradiated CdS-Bi2S3 bi-layer thin films are presented.

Contact interaction of thin-walled elements with an elastic layer and an infinite circular cylinder under torsion

NASA Astrophysics Data System (ADS)

Kanetsyan, E. G.; Mkrtchyan, M. S.; Mkhitaryan, S. M.

2018-04-01

We consider a class of contact torsion problems on interaction of thin-walled elements shaped as an elastic thin washer – a flat circular plate of small height – with an elastic layer, in particular, with a half-space, and on interaction of thin cylindrical shells with a solid elastic cylinder, infinite in both directions. The governing equations of the physical models of elastic thin washers and thin circular cylindrical shells under torsion are derived from the exact equations of mathematical theory of elasticity using the Hankel and Fourier transforms. Within the framework of the accepted physical models, the solution of the contact problem between an elastic washer and an elastic layer is reduced to solving the Fredholm integral equation of the first kind with a kernel representable as a sum of the Weber–Sonin integral and some integral regular kernel, while solving the contact problem between a cylindrical shell and solid cylinder is reduced to a singular integral equation (SIE). An effective method for solving the governing integral equations of these problems are specified.

Effect of dead layer and strain on diffuse phase transition of PLZT relaxor thin films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tong, S.; Narayanan, M.; Ma, B.

2011-02-01

Bulk relaxor ferroelectrics exhibit excellent permittivity compared to their thin film counterpart, although both show diffuse phase transition (DPT) behavior unlike normal ferroelectrics. To better understand the effect of dead layer and strain on the observed anomaly in the dielectric properties, we have developed relaxor PLZT (lead lanthanum zirconate titanate) thin films with different thicknesses and measured their dielectric properties as a function of temperature and frequency. The effect of dead layer on thin film permittivity has been found to be independent of temperature and frequency, and is governed by the Schottky barrier between the platinum electrode and PLZT. Themore » total strain (thermal and intrinsic) in the film majorly determines the broadening, dielectric peak and temperature shift in the relaxor ferroelectric. The Curie-Weiss type law for relaxors has been further modified to incorporate these two effects to accurately predict the DPT behavior of thin film and bulk relaxor ferroelectrics. The dielectric behavior of thin film is predicted by using the bulk dielectric data from literature in the proposed equation, which agree well with the measured dielectric behavior.« less

Epitaxial growth and dielectric properties of Pb0.4Sr0.6TiO3 thin films on (00l)-oriented metallic Li0.3Ni0.7O2 coated MgO substrates

NASA Astrophysics Data System (ADS)

Li, X. T.; Du, P. Y.; Mak, C. L.; Wong, K. H.

2007-06-01

Highly (00l)-oriented Li0.3Ni0.7O2 thin films have been fabricated on (001) MgO substrates by pulsed laser deposition. The Pb0.4Sr0.6TiO3 (PST40) thin film deposited subsequently also shows a significant (00l)-oriented texture. Both the PST40 and Li0.3Ni0.7O2 have good epitaxial behavior. The epitaxial growth of the PST40 thin film is more perfect with the Li0.3Ni0.7O2 buffer layer due to the less distortion in the film. The dielectric tunability of the PST40 thin film with Li0.3Ni0.7O2 buffer layer therefore reaches 70%, which is 75% higher than that without Li0.3Ni0.7O2 buffer layer, and the dielectric loss of the PST40 thin film is 0.06.

Methods to induce perpendicular magnetic anisotropy in full-Heusler Co2FeSi thin layers in a magnetic tunnel junction structure

NASA Astrophysics Data System (ADS)

Shinohara, Koki; Suzuki, Takahiro; Takamura, Yota; Nakagawa, Shigeki

2018-05-01

In this study, to obtain perpendicular magnetic tunnel junctions (p-MTJs) using half-metallic ferromagnets (HMFs), several methods were developed to induce perpendicular magnetic anisotropy (PMA) in full-Heusler Co2FeSi (CFS) alloy thin layers in an MTJ multilayer composed of a layered CFS/MgO/CFS structure. Oxygen exposure at 2.0 Pa for 10 min after deposition of the bottom CFS layer was effective for obtaining PMA in the CFS layer. One of the reasons for the PMA is the formation of nearly ideal CFS/MgO interfaces due to oxygen exposure before the deposition of the MgO layer. The annealing process was effective for obtaining PMA in the top CFS layer capped with a Pd layer. PMA was clearly observed in the top CFS layer of a Cr(40 nm)/Pd(50 nm)/bottom CFS(0.6 nm)/MgO(2.0 nm)/top CFS(0.6 nm)/ Pd(10 nm) multilayer, where the top CFS and Pd thin films were deposited at RT and subsequently annealed at 300°C. In addition to the continuous layer growth of the films, the crystalline orientation alignment at the top CFS/Pd interface probably attributes to the origin of PMA at the top CFS layer.

Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor

NASA Astrophysics Data System (ADS)

Kim, Dongha; Park, Hyungjin; Bae, Byeong-Soo

2016-03-01

In order to improve the reliability of TFT, an Al2O3 insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al2O3 layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V o2+ toward the interface between the gate insulator and the semiconductor. The inserted Al2O3 triple layer exhibits a noticeably low turn on voltage shift of -0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm2/V ṡ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.

High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

DOEpatents

Ginley, David S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.; Martens, Jon S.; Plut, Thomas A.; Tigges, Chris P.; Vawter, Gregory A.; Zipperian, Thomas E.

1994-10-25

A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

Triangular Black Phosphorus Atomic Layers by Liquid Exfoliation.

PubMed

Seo, Soonjoo; Lee, Hyun Uk; Lee, Soon Chang; Kim, Yooseok; Kim, Hyeran; Bang, Junhyeok; Won, Jonghan; Kim, Youngjun; Park, Byoungnam; Lee, Jouhahn

2016-03-30

Few-layer black phosphorus (BP) is the most promising material among the two-dimensional materials due to its layered structure and the excellent semiconductor properties. Currently, thin BP atomic layers are obtained mostly by mechanical exfoliation of bulk BP, which limits applications in thin-film based electronics due to a scaling process. Here we report highly crystalline few-layer black phosphorus thin films produced by liquid exfoliation. We demonstrate that the liquid-exfoliated BP forms a triangular crystalline structure on SiO2/Si (001) and amorphous carbon. The highly crystalline BP layers are faceted with a preferred orientation of the (010) plane on the sharp edge, which is an energetically most favorable facet according to the density functional theory calculations. Our results can be useful in understanding the triangular BP structure for large-area applications in electronic devices using two-dimensional materials. The sensitivity and selectivity of liquid-exfoliated BP to gas vapor demonstrate great potential for practical applications as sensors.

Triangular Black Phosphorus Atomic Layers by Liquid Exfoliation

PubMed Central

Seo, Soonjoo; Lee, Hyun Uk; Lee, Soon Chang; Kim, Yooseok; Kim, Hyeran; Bang, Junhyeok; Won, Jonghan; Kim, Youngjun; Park, Byoungnam; Lee, Jouhahn

2016-01-01

Few-layer black phosphorus (BP) is the most promising material among the two-dimensional materials due to its layered structure and the excellent semiconductor properties. Currently, thin BP atomic layers are obtained mostly by mechanical exfoliation of bulk BP, which limits applications in thin-film based electronics due to a scaling process. Here we report highly crystalline few-layer black phosphorus thin films produced by liquid exfoliation. We demonstrate that the liquid-exfoliated BP forms a triangular crystalline structure on SiO2/Si (001) and amorphous carbon. The highly crystalline BP layers are faceted with a preferred orientation of the (010) plane on the sharp edge, which is an energetically most favorable facet according to the density functional theory calculations. Our results can be useful in understanding the triangular BP structure for large-area applications in electronic devices using two-dimensional materials. The sensitivity and selectivity of liquid-exfoliated BP to gas vapor demonstrate great potential for practical applications as sensors. PMID:27026070

Structural properties and sensing performance of high-k Nd2TiO5 thin layer-based electrolyte-insulator-semiconductor for pH detection and urea biosensing.

PubMed

Pan, Tung-Ming; Lin, Jian-Chi; Wu, Min-Hsien; Lai, Chao-Sung

2009-05-15

For high sensitive pH sensing, an electrolyte-insulator-semiconductor (EIS) device with Nd(2)TiO(5) thin layers fabricated on Si substrates by means of reactive sputtering and the subsequent post-deposition annealing (PDA) treatment was proposed. In this work, the effect of thermal annealing (600, 700, 800, and 900 degrees C) on the structural characteristics of Nd(2)TiO(5) thin layer was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy. The observed structural properties were then correlated with the resulting pH sensing performances. For enzymatic field-effect-transistors-based urea biosensing, a hybrid configuration of the proposed Nd(2)TiO(5) thin layer with urease-immobilized alginate film attached was established. Within the experimental conditions investigated, the EIS device with the Nd(2)TiO(5) thin layer annealed at 800 degrees C exhibited a higher pH detection sensitivity of 57.2 mV/pH, a lower hysteresis voltage of 2.33 mV, and a lower drift rate of 1.80 mV/h compared to those at other annealing temperatures. These results are attributed to the formation of a thinner low-k interfacial layer at the oxide/Si interface and the higher surface roughness occurred at this annealing temperature. Furthermore, the presented urea biosensor was also proved to be able to detect urea with good linearity (R(2)=0.99) and reasonable sensitivity of 9.52 mV/mM in the urea concentration range of 3-40 mM. As a whole, the present work has provided some fundamental data for the use of Nd(2)TiO(5) thin layer for EIS-based pH detection and the extended application for biosensing.

Epitaxial thin films

DOEpatents

Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

2006-04-25

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Pei; Zaslavsky, Alexander; Longo, Paolo

2016-01-07

Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Taucmore » and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO{sub 2} superlattices with single and multiple a-Ge layers down to 2 nm thickness.« less

GUARD RING SEMICONDUCTOR JUNCTION

DOEpatents

Goulding, F.S.; Hansen, W.L.

1963-12-01

A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

Highway pavement performance test for colored thin anti-skidding layers

NASA Astrophysics Data System (ADS)

Gao, Wei; Cui, Wei; Xu, Ming

2018-03-01

Based on the actual service condition of highway pavement colored thin anti-skidding layers, with materials of color quartz sand and two-component acrylic resin as basis, we designed such tests as the bond strength, shearing strength, tear strength, fatigue performance and aggregate polished value, and included the freeze-thaw cycle and de-icing salt and other factors in the experiment, connecting with the climate characteristics of circumpolar latitude and low altitude in Heilongjiang province. Through the pavement performance test, it is confirmed that the colored thin anti-skidding layers can adapt to cold and humid climate conditions, and its physical mechanical properties are good.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

PubMed Central

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chenggong; Wang, Congcong; Kauppi, John

2015-08-28

Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.

Nanosphere lithography applied to magnetic thin films

NASA Astrophysics Data System (ADS)

Gleason, Russell

Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

Discrete hierarchy of sizes and performances in the exchange-traded fund universe

NASA Astrophysics Data System (ADS)

Vandermarliere, B.; Ryckebusch, J.; Schoors, K.; Cauwels, P.; Sornette, D.

2017-03-01

Using detailed statistical analyses of the size distribution of a universe of equity exchange-traded funds (ETFs), we discover a discrete hierarchy of sizes, which imprints a log-periodic structure on the probability distribution of ETF sizes that dominates the details of the asymptotic tail. This allows us to propose a classification of the studied universe of ETFs into seven size layers approximately organized according to a multiplicative ratio of 3.5 in their total market capitalization. Introducing a similarity metric generalizing the Herfindhal index, we find that the largest ETFs exhibit a significantly stronger intra-layer and inter-layer similarity compared with the smaller ETFs. Comparing the performance across the seven discerned ETF size layers, we find an inverse size effect, namely large ETFs perform significantly better than the small ones both in 2014 and 2015.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Transmissive metallic contact for amorphous silicon solar cells

DOEpatents

Madan, A.

1984-11-29

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Integrated Fluorescence

NASA Technical Reports Server (NTRS)

Tuma, Margaret (Inventor); Gruhlke, Russell W. (Inventor)

1998-01-01

A detection method is integrated with a filtering method and an enhancement method to create a fluorescence sensor that can be miniaturized. The fluorescence sensor comprises a thin film geometry including a waveguide layer, a metal film layer and sensor layer. The thin film geometry of the fluorescence sensor allows the detection of fluorescent radiation over a narrow wavelength interval. This enables wavelength discrimination and eliminates the detection of unwanted light from unknown or spurious sources.

Formation of thin-film resistors on silicon substrates

DOEpatents

Schnable, George L.; Wu, Chung P.

1988-11-01

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohri, Maryam, E-mail: mmohri@ut.ac.ir; Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe; Nili-Ahmadabadi, Mahmoud

The crystallization of Ni-rich/NiTiCu bi-layer thin film deposited by magnetron sputtering from two separate alloy targets was investigated. To achieve the shape memory effect, the NiTi thin films deposited at room temperature with amorphous structure were annealed at 773 K for 15, 30, and 60 min for crystallization. Characterization of the films was carried out by differential scanning calorimetry to indicate the crystallization temperature, grazing incidence X-ray diffraction to identify the phase structures, atomic force microscopy to evaluate surface morphology, scanning transmission electron microscopy to study the cross section of the thin films. The results show that the structure ofmore » the annealed thin films strongly depends on the temperature and time of the annealing. Crystalline grains nucleated first at the surface and then grew inward to form columnar grains. Furthermore, the crystallization behavior was markedly affected by composition variations. - Highlights: • A developed bi-layer Ni45TiCu5/Ni50.8Ti was deposited on Si substrate and crystallized. • During crystallization, The Ni{sub 45}TiCu{sub 5} layer is thermally less stable than the Ni-rich layer. • The activation energy is 302 and 464 kJ/mol for Cu-rich and Ni-rich layer in bi-layer, respectively.« less

New designs and characterization techniques for thin-film solar cells

NASA Astrophysics Data System (ADS)

Pang, Yutong

This thesis presents a fundamentally new thin-film photovoltaic design and develops several novel characterization techniques that improve the accuracy of thin-film solar cell computational models by improving the accuracy of the input data. We first demonstrate a novel organic photovoltaic (OPV) design, termed a "Slot OPV", in which the active layer is less than 50 nm; We apply the principles of slot waveguides to confine light within the active layer. According to our calculation, the guided-mode absorption for a 10nm thick active layer equal to the absorption of normal incidence on an OPV with a 100nm thick active layer. These results, together with the expected improvement in charge extraction for ultrathin layers, suggest that slot OPVs can be designed with greater power conversion efficiency than today's state-of-art OPV architectures if practical challenges, such as the efficient coupling of light into these modes, can be overcome. The charge collection probability, i.e. the probability that charges generated by absorption of a photon are successfully collected as current, is a critical feature for all kinds of solar cells. While the electron-beam-induced current (EBIC) method has been used in the past to successfully reconstruct the charge collection probability, this approach is destructive and requires time-consuming sample preparation. We demonstrate a new nondestructive optoelectronic method to reconstruct the charge collection probability by analyzing the internal quantum efficiency (IQE) data that are measured on copper indium gallium diselenide (CIGS) thin-film solar cells. We further improve the method with a parameter-independent regularization approach. Then we introduce the Self-Constrained Ill-Posed Inverse Problem (SCIIP) method, which improves the signal-to-noise of the solution by using the regularization method with system constraints and optimization via an evolutionary algorithm. For a thin-film solar cell optical model to be an accurate representation of reality, the measured refractive index profile of the solar cell used as input to the model must also be accurate. We describe a new method for reconstructing the depth-dependent refractive-index profile with high spatial resolution in thin photoactive layers. This novel technique applies to any thin film, including the photoactive layers of a broad range of thin-film photovoltaics. Together, these methods help us improve the measurement accuracy of the depth profile within thin-film photovoltaics for optical and electronic properties such as refractive index and charge collection probability, which is critical to the understanding, modeling, and optimization of these devices.

Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Tari, Alireza; Wong, William S.

2018-02-01

Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

Leaping shampoo glides on a 500-nm-thick lubricating air layer

NASA Astrophysics Data System (ADS)

Li, Erqiang; Lee, Sanghyun; Marston, Jeremy; Bonito, Andrea; Thoroddsen, Sigurdur

2013-11-01

When a stream of shampoo is fed onto a pool in one's hand, a jet can leap sideways or rebound from the liquid surface in an intriguing phenomenon known as the Kaye effect. Earlier studies have debated whether non-Newtonian effects are the underlying cause of this phenomenon, making the jet glide on top of a shear-thinning liquid layer, or whether an entrained air layer is responsible. Herein we show unambiguously that the jet slides on a lubricating air layer [Lee et al., Phys. Rev. E 87, 061001 (2013)]. We identify this layer by looking through the pool liquid and observing its rupture into fine micro-bubbles. The resulting micro-bubble sizes suggest that the thickness of this air layer is around 500 nm. This thickness estimate is also supported by the tangential deceleration of the jet during the rebounding, with the shear stress within the thin air layer sufficient for the observed deceleration. Particle tracking within the jet shows uniform velocity, with no pronounced shear, which would be required for shear-thinning effects. The role of the surfactant may primarily be to stabilize the air film.

Method of producing solution-derived metal oxide thin films

DOEpatents

Boyle, Timothy J.; Ingersoll, David

2000-01-01

A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

Investigation of discrete component chip mounting technology for hybrid microelectronic circuits

NASA Technical Reports Server (NTRS)

Caruso, S. V.; Honeycutt, J. O.

1975-01-01

The use of polymer adhesives for high reliability microcircuit applications is a radical deviation from past practices in electronic packaging. Bonding studies were performed using two gold-filled conductive adhesives, 10/90 tin/lead solder and Indalloy no. 7 solder. Various types of discrete components were mounted on ceramic substrates using both thick-film and thin-film metallization. Electrical and mechanical testing were performed on the samples before and after environmental exposure to MIL-STD-883 screening tests.

The Western North American Cretaceous-Tertiary (K-T) boundary interval and its content of shock-metamorphosed minerals: Implications concerning the K-T boundary impact-extinction theory

NASA Technical Reports Server (NTRS)

Izett, G. A.

1988-01-01

At 20 sites in the Raton Basin of Colorado and New Mexico, and at several other sites in Wyoming, Montana, and Canada, a pair of claystone units, an Ir abundance anomaly, and a concentration of shock-metamorphosed minerals mark the palynological K-T boundary. The K-T boundary claystone, which is composed of kaolinite and small amounts of illite/smectite mixed-layer clay, is similar in most respects to kaolinite tonstein layers in coal beds. At some, but not all, K-T boundary localities, the boundary claystone contains solid kaolinite and hollow and solid goyazite spherules, 0.05 to 1.2 mm in diameter. The upper unit, the K-T boundary impact layer, consists chiefly of kaolinite and various amounts of illite/smectite mixed-layer clay. The impact layer and boundary claystone are similar chemically, except that the former has slightly more Fe, K, Ba, Cr, Cu, Li, V, and Zn than the latter. The facts that the boundary claystone and impact layer contain anomalous amounts of Ir, comprise a stratigraphic couplet at Western North American sites, and form thin, discrete layers, similar to air-fall units (volcanic or impact), suggest that the claystone units are of impact origin. Significantly, the impact layer contains as much as 2 percent clastic mineral grains, about 30 percent of which contain multiple sets of shock lamellae. Only one such concentration of shocked minerals has been found near the K-T boundary. The type of K-T boundary shock-metamorphosed materials (quartzite and metaquartzite) in the impact layer and the lack of shock lamellae in quartz and feldspar of pumice lapilli and granitic xenoliths in air-fall pumice units of silicic tuffs, such as the Bishop Tuff, eliminate the possibility that the shock-metamorphosed minerals in the K-T impact layer are of volcanic origin. The global size distribution and abundance of shock-metamorphosed mineral grains suggest that the K-T impact occurred in North America.

Fabrication of stable, wide-bandgap thin films of Mg, Zn and O

DOEpatents

Katiyar, Ram S.; Bhattacharya, Pijush; Das, Rasmi R.

2006-07-25

A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al₂O₃ substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750.degree. C.

Crystalline Stratification in Semiconducting Polymer Thin Film Quantified by Grazing Incidence X-ray Scattering

NASA Astrophysics Data System (ADS)

Gann, Eliot; Caironi, Mario; Noh, Yong-Young; Kim, Yun-Hi; McNeill, Christopher R.

The depth dependence of crystalline structure within thin films is critical for many technological applications, but has been impossible to measure directly using common techniques. In this work, by monitoring diffraction peak intensity and location and utilizing the highly angle-dependent waveguiding effects of X-rays near grazing incidence we quantitatively measure the thickness, roughness and orientation of stratified crystalline layers within thin films of a high-performance semiconducting polymer. In particular, this diffractive X-ray waveguiding reveals a self-organized 5-nm-thick crystalline surface layer with crystalline orientation orthogonal to the underlying 65-nm-thick layer. While demonstrated for an organic semiconductor film, this approach is applicable to any thin film material system where stratified crystalline structure and orientation can influence important interfacial processes such as charge injection and field-effect transport.

Thin film encapsulation for flexible AM-OLED: a review

NASA Astrophysics Data System (ADS)

Park, Jin-Seong; Chae, Heeyeop; Chung, Ho Kyoon; In Lee, Sang

2011-03-01

Flexible organic light emitting diode (OLED) will be the ultimate display technology to customers and industries in the near future but the challenges are still being unveiled one by one. Thin-film encapsulation (TFE) technology is the most demanding requirement to prevent water and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This work provides a review of promising thin-film barrier technologies as well as the basic gas diffusion background. Topics include the significance of the device structure, permeation rate measurement, proposed permeation mechanism, and thin-film deposition technologies (Vitex system and atomic layer deposition (ALD)/molecular layer deposition (MLD)) for effective barrier films.

Discrete Self-Similarity in Interfacial Hydrodynamics and the Formation of Iterated Structures.

PubMed

Dallaston, Michael C; Fontelos, Marco A; Tseluiko, Dmitri; Kalliadasis, Serafim

2018-01-19

The formation of iterated structures, such as satellite and subsatellite drops, filaments, and bubbles, is a common feature in interfacial hydrodynamics. Here we undertake a computational and theoretical study of their origin in the case of thin films of viscous fluids that are destabilized by long-range molecular or other forces. We demonstrate that iterated structures appear as a consequence of discrete self-similarity, where certain patterns repeat themselves, subject to rescaling, periodically in a logarithmic time scale. The result is an infinite sequence of ridges and filaments with similarity properties. The character of these discretely self-similar solutions as the result of a Hopf bifurcation from ordinarily self-similar solutions is also described.

Acquisition of thin coronal sectional dataset of cadaveric liver.

PubMed

Lou, Li; Liu, Shu Wei; Zhao, Zhen Mei; Tang, Yu Chun; Lin, Xiang Tao

2014-04-01

To obtain the thin coronal sectional anatomic dataset of the liver by using digital freezing milling technique. The upper abdomen of one Chinese adult cadaver was selected as the specimen. After CT and MRI examinations verification of absent liver lesions, the specimen was embedded with gelatin in stand erect position and frozen under profound hypothermia, and the specimen was then serially sectioned from anterior to posterior layer by layer with digital milling machine in the freezing chamber. The sequential images were captured by means of a digital camera and the dataset was imported to imaging workstation. The thin serial section of the liver added up to 699 layers with each layer being 0.2 mm in thickness. The shape, location, structure, intrahepatic vessels and adjacent structures of the liver was displayed clearly on each layer of the coronal sectional slice. CT and MR images through the body were obtained at 1.0 and 3.0 mm intervals, respectively. The methodology reported here is an adaptation of the milling methods previously described, which is a new data acquisition method for sectional anatomy. The thin coronal sectional anatomic dataset of the liver obtained by this technique is of high precision and good quality.

Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors

NASA Astrophysics Data System (ADS)

Gao, Xu; Lin, Meng-Fang; Mao, Bao-Hua; Shimizu, Maki; Mitoma, Nobuhiko; Kizu, Takio; Ou-Yang, Wei; Nabatame, Toshihide; Liu, Zhi; Tsukagoshi, Kazuhito; Wang, Sui-Dong

2017-01-01

Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O2/air. The device with a thick IGZO layer shows similar electron mobility in O2/air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O2/air due to the electron transfer to adsorbed gas molecules. The O2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results.

Free and bound excitons in thin wurtzite GaN layers on sapphire

NASA Astrophysics Data System (ADS)

Merz, C.; Kunzer, M.; Kaufmann, U.; Akasaki, I.; Amano, H.

1996-05-01

Free and bound excitons have been studied by photoluminescence in thin (0268-1242/11/5/010/img8) wurtzite-undoped GaN, n-type GaN:Si as well as p-type GaN:Mg and GaN:Zn layers grown by metal-organic chemical vapour phase deposition (MOCVD). An accurate value for the free A exciton binding energy and an estimate for the isotropically averaged hole mass of the uppermost 0268-1242/11/5/010/img9 valence band are deduced from the data on undoped samples. The acceptor-doped samples reveal recombination lines which are attributed to excitons bound to 0268-1242/11/5/010/img10 and 0268-1242/11/5/010/img11 respectively. These lines are spectrally clearly separated and the exciton localization energies are in line with Haynes' rule. Whenever a comparison is possible, it is found that the exciton lines in these thin MOCVD layers are ultraviolet-shifted by 20 to 25 meV as compared to quasi-bulk (0268-1242/11/5/010/img12) samples. This effect is interpreted in terms of the compressive hydrostatic stress component which thin GaN layers experience when grown on sapphire with an AlN buffer layer.

A Cuprous Oxide Thin Film Non-Enzymatic Glucose Sensor Using Differential Pulse Voltammetry and Other Voltammetry Methods and a Comparison to Different Thin Film Electrodes on the Detection of Glucose in an Alkaline Solution

PubMed Central

Molazemhosseini, Alireza; Liu, Chung Chiun

2018-01-01

A cuprous oxide (Cu2O) thin layer served as the base for a non-enzymatic glucose sensor in an alkaline medium, 0.1 NaOH solution, with a linear range of 50–200 mg/dL using differential pulse voltammetry (DPV) measurement. An X-ray photoelectron spectroscopy (XPS) study confirmed the formation of the cuprous oxide layer on the thin gold film sensor prototype. Quantitative detection of glucose in both phosphate-buffered saline (PBS) and undiluted human serum was carried out. Neither ascorbic acid nor uric acid, even at a relatively high concentration level (100 mg/dL in serum), interfered with the glucose detection, demonstrating the excellent selectivity of this non-enzymatic cuprous oxide thin layer-based glucose sensor. Chronoamperometry and single potential amperometric voltammetry were used to verify the measurements obtained by DPV, and the positive results validated that the detection of glucose in a 0.1 M NaOH alkaline medium by DPV measurement was effective. Nickel, platinum, and copper are commonly used metals for non-enzymatic glucose detection. The performance of these metal-based sensors for glucose detection using DPV were also evaluated. The cuprous oxide (Cu2O) thin layer-based sensor showed the best sensitivity for glucose detection among the sensors evaluated. PMID:29316652

Sinusoidal nanotextures for light management in silicon thin-film solar cells.

PubMed

Köppel, G; Rech, B; Becker, C

2016-04-28

Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

Thin Layer Chromatography (TLC) of Chlorophyll Pigments.

ERIC Educational Resources Information Center

Foote, Jerry

1984-01-01

Background information, list of materials needed, procedures used, and discussion of typical results are provided for an experiment on the thin layer chromatography of chlorophyll pigments. The experiment works well in high school, since the chemicals used are the same as those used in paper chromatography of plant pigments. (JN)

What Factors Affect the Separation of Substances Using Thin-Layer Chromatography? An Undergraduate Experiment.

ERIC Educational Resources Information Center

Nash, John J.; Meyer, Jeanne A.; Everson, Barbara

2001-01-01

Rx values in thin-layer chromatography (TLC) depend strongly on the solvent saturation of the atmosphere above the liquid in the TLC developing chamber. Presents an experiment illustrating the potentially dramatic effects on TLC Rx values of not equilibrating the solvent atmosphere during development. (ASK)

21 CFR 862.2270 - Thin-layer chromatography system for clinical use.

Code of Federal Regulations, 2011 CFR

2011-04-01

... a mixture. The mixture of compounds is absorbed onto a stationary phase or thin layer of inert material (e.g., cellulose, alumina, etc.) and eluted off by a moving solvent (moving phase) until equilibrium occurs between the two phases. (b) Classification. Class I (general controls). The device is...

Quantitative determination of seven chemical constituents and chemo-type differentiation of chamomiles using high-performance thin-layer chromatography

USDA-ARS?s Scientific Manuscript database

Matricaria recutita L. (German Chamomile), Anthemis nobilis L. (Roman Chamomile) and Chrysanthemum morifolium Ramat are commonly used chamomiles. High performance thin layer chromatographic (HPTLC) method was developed for estimation of six flavonoids (rutin, luteolin-7-O-ß-glucoside, chamaemeloside...

A Thin Layer Chromatography Laboratory Experiment of Medical Importance

ERIC Educational Resources Information Center

Sharma, Loretta; Desai, Ankur; Sharma, Ajit

2006-01-01

A thin layer chromatography experiment of medical importance is described. The experiment involves extraction of lipids from simulated amniotic fluid samples followed by separation, detection, and scanning of the lecithin and sphingomyelin bands on TLC plates. The lecithin-to-sphingomyelin ratio is calculated. The clinical significance of this…

Showing Its Colors. Thin-Layer Chromatographic Detection of Cannabinoid Metabolites.

ERIC Educational Resources Information Center

Bonicamp, Judith M.

1986-01-01

Describes a chemistry laboratory experiment in which thin-layer chromatography (TLC) is used to analyze urine specimens containing metabolites of the drug tetrahydro-cannabinol, which comes from the marijuana plant. The materials needed to conduct the experiment are listed, and the procedure and expected results are outlined. (TW)

Analysis and Identification of Acid-Base Indicator Dyes by Thin-Layer Chromatography

ERIC Educational Resources Information Center

Clark, Daniel D.

2007-01-01

Thin-layer chromatography (TLC) is a very simple and effective technique that is used by chemists by different purposes, including the monitoring of the progress of a reaction. TLC can also be easily used for the analysis and identification of various acid-base indicator dyes.

In situ identification of high-performance thin-layer chromatography spots by fourier transform surface-enhanced Raman scattering

NASA Astrophysics Data System (ADS)

Koglin, Eckhardt; Kramer, Hella; Sawatski, Juergen; Lehner, Carolin; Hellman, Janice L.

1994-01-01

FT-SERS has been used to identify samples supported on high-performance thin-layer chromatography plates. The TLC plates were sprayed with colloidal silver solutions which resulted in enhancement of the FT-Raman scattering of these biologically and environmentally important compounds.

21 CFR 862.2270 - Thin-layer chromatography system for clinical use.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Thin-layer chromatography system for clinical use. 862.2270 Section 862.2270 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES CLINICAL CHEMISTRY AND CLINICAL TOXICOLOGY DEVICES Clinical Laboratory...

21 CFR 862.2270 - Thin-layer chromatography system for clinical use.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Thin-layer chromatography system for clinical use. 862.2270 Section 862.2270 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES CLINICAL CHEMISTRY AND CLINICAL TOXICOLOGY DEVICES Clinical Laboratory...

21 CFR 862.2270 - Thin-layer chromatography system for clinical use.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Thin-layer chromatography system for clinical use. 862.2270 Section 862.2270 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES CLINICAL CHEMISTRY AND CLINICAL TOXICOLOGY DEVICES Clinical Laboratory...

Normal and Reversed-Phase Thin Layer Chromatography of Green Leaf Extracts

ERIC Educational Resources Information Center

Sjursnes, Birte Johanne; Kvittingen, Lise; Schmid, Rudolf

2015-01-01

Introductory experiments of chromatography are often conducted by separating colored samples, such as inks, dyes, and plant extracts, using filter paper, chalk, or thin layer chromatography (TLC) plates with various solvent systems. Many simple experiments have been reported. The relationship between normal chromatography and reversed-phase…

"Wetting enhancer" pullulan coating for antifog packaging applications.

PubMed

Introzzi, Laura; Fuentes-Alventosa, José María; Cozzolino, Carlo A; Trabattoni, Silvia; Tavazzi, Silvia; Bianchi, Claudia L; Schiraldi, Alberto; Piergiovanni, Luciano; Farris, Stefano

2012-07-25

A new antifog coating made of pullulan is described in this work. The antifog properties are discussed in terms of wettability, surface chemistry/morphology, and by quantitative assessment of the optical properties (haze and transparency) before and after fog formation. The work also presents the results of antifog tests simulating the typical storage conditions of fresh foods. In these tests, the antifog efficiency of the pullulan coating was compared with that of two commercial antifog films, whereas an untreated low-density polyethylene (LDPE) film was used as a reference. The obtained results revealed that the pullulan coating behaved as a "wetting enhancer", mainly due to the low water contact angle (∼24°), which in turn can be ascribed to the inherent hydrophilic nature of this polysaccharide, as also suggested by the X-ray photoelectron spectroscopy experiments. Unlike the case of untreated LDPE and commercial antifog samples, no discrete water formations (i.e., droplets or stains) were observed on the antifog pullulan coating on refrigeration during testing. Rather, an invisible, continuous and thin layer of water occurred on the biopolymer surface, which was the reason for the unaltered haze and increased transparency, with the layer of water possibly behaving as an antireflection layer. As confirmed by atomic force microscopy analysis, the even deposition of the coating on the plastic substrate compared to the patchy surfacing of the antifog additives in the commercial films is another important factor dictating the best performance of the antifog pullulan coating.

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

NASA Astrophysics Data System (ADS)

Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun

2015-03-01

Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (Δ V Th ≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (Δ V Th = 4.0 V). However, the AZO/ZnO bi-layer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2/V·s for 5 at. % and 1.8 cm2/V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2/V·s) due to increased scattering caused by Al-related impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility (7.8 cm2/V·s for 14 at. %) and better stability. [Figure not available: see fulltext.

X-ray lithography masking

NASA Technical Reports Server (NTRS)

Smith, Henry I. (Inventor); Lim, Michael (Inventor); Carter, James (Inventor); Schattenburg, Mark (Inventor)

1998-01-01

X-ray masking apparatus includes a frame having a supporting rim surrounding an x-ray transparent region, a thin membrane of hard inorganic x-ray transparent material attached at its periphery to the supporting rim covering the x-ray transparent region and a layer of x-ray opaque material on the thin membrane inside the x-ray transparent region arranged in a pattern to selectively transmit x-ray energy entering the x-ray transparent region through the membrane to a predetermined image plane separated from the layer by the thin membrane. A method of making the masking apparatus includes depositing back and front layers of hard inorganic x-ray transparent material on front and back surfaces of a substrate, depositing back and front layers of reinforcing material on the back and front layers, respectively, of the hard inorganic x-ray transparent material, removing the material including at least a portion of the substrate and the back layers of an inside region adjacent to the front layer of hard inorganic x-ray transparent material, removing a portion of the front layer of reinforcing material opposite the inside region to expose the surface of the front layer of hard inorganic x-ray transparent material separated from the inside region by the latter front layer, and depositing a layer of x-ray opaque material on the surface of the latter front layer adjacent to the inside region.

Multi-Dimensional Damage Detection for Surfaces and Structures

NASA Technical Reports Server (NTRS)

Williams, Martha; Lewis, Mark; Roberson, Luke; Medelius, Pedro; Gibson, Tracy; Parks, Steen; Snyder, Sarah

2013-01-01

Current designs for inflatable or semi-rigidized structures for habitats and space applications use a multiple-layer construction, alternating thin layers with thicker, stronger layers, which produces a layered composite structure that is much better at resisting damage. Even though such composite structures or layered systems are robust, they can still be susceptible to penetration damage. The ability to detect damage to surfaces of inflatable or semi-rigid habitat structures is of great interest to NASA. Damage caused by impacts of foreign objects such as micrometeorites can rupture the shell of these structures, causing loss of critical hardware and/or the life of the crew. While not all impacts will have a catastrophic result, it will be very important to identify and locate areas of the exterior shell that have been damaged by impacts so that repairs (or other provisions) can be made to reduce the probability of shell wall rupture. This disclosure describes a system that will provide real-time data regarding the health of the inflatable shell or rigidized structures, and information related to the location and depth of impact damage. The innovation described here is a method of determining the size, location, and direction of damage in a multilayered structure. In the multi-dimensional damage detection system, layers of two-dimensional thin film detection layers are used to form a layered composite, with non-detection layers separating the detection layers. The non-detection layers may be either thicker or thinner than the detection layers. The thin-film damage detection layers are thin films of materials with a conductive grid or striped pattern. The conductive pattern may be applied by several methods, including printing, plating, sputtering, photolithography, and etching, and can include as many detection layers that are necessary for the structure construction or to afford the detection detail level required. The damage is detected using a detector or sensory system, which may include a time domain reflectometer, resistivity monitoring hardware, or other resistance-based systems. To begin, a layered composite consisting of thin-film damage detection layers separated by non-damage detection layers is fabricated. The damage detection layers are attached to a detector that provides details regarding the physical health of each detection layer individually. If damage occurs to any of the detection layers, a change in the electrical properties of the detection layers damaged occurs, and a response is generated. Real-time analysis of these responses will provide details regarding the depth, location, and size estimation of the damage. Multiple damages can be detected, and the extent (depth) of the damage can be used to generate prognostic information related to the expected lifetime of the layered composite system. The detection system can be fabricated very easily using off-the-shelf equipment, and the detection algorithms can be written and updated (as needed) to provide the level of detail needed based on the system being monitored. Connecting to the thin film detection layers is very easy as well. The truly unique feature of the system is its flexibility; the system can be designed to gather as much (or as little) information as the end user feels necessary. Individual detection layers can be turned on or off as necessary, and algorithms can be used to optimize performance. The system can be used to generate both diagnostic and prognostic information related to the health of layer composite structures, which will be essential if such systems are utilized for space exploration. The technology is also applicable to other in-situ health monitoring systems for structure integrity.

New technique for heterogeneous vapor-phase synthesis of nanostructured metal layers from low-dimensional volatile metal complexes

NASA Astrophysics Data System (ADS)

Badalyan, A. M.; Bakhturova, L. F.; Kaichev, V. V.; Polyakov, O. V.; Pchelyakov, O. P.; Smirnov, G. I.

2011-09-01

A new technique for depositing thin nanostructured layers on semiconductor and insulating substrates that is based on heterogeneous gas-phase synthesis from low-dimensional volatile metal complexes is suggested and tried out. Thin nanostructured copper layers are deposited on silicon and quartz substrates from low-dimensional formate complexes using a combined synthesis-mass transport process. It is found that copper in layers thus deposited is largely in a metal state (Cu0) and has the form of closely packed nanograins with a characteristic structure.

Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lovygin, M. V., E-mail: lemi@miee.ru; Borgardt, N. I.; Seibt, M.

2015-12-15

The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are coherently conjugated with the substrate with the formation of misfit dislocations, as in the case of a layer on a singular substrate. Atomic steps on the substrate surface are visualized, and their influence on the growth of aluminum crystal grains is discussed.

Thin film solar energy collector

DOEpatents

Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

1983-11-22

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications

NASA Astrophysics Data System (ADS)

Huai, Yiming; Gan, Huadong; Wang, Zihui; Xu, Pengfa; Hao, Xiaojie; Yen, Bing K.; Malmhall, Roger; Pakala, Nirav; Wang, Cory; Zhang, Jing; Zhou, Yuchen; Jung, Dongha; Satoh, Kimihiro; Wang, Rongjun; Xue, Lin; Pakala, Mahendra

2018-02-01

High volume spin transfer torque magnetoresistance random access memory (STT-MRAM) for standalone and embedded applications requires a thin perpendicular magnetic tunnel junction (pMTJ) stack (˜10 nm) with a tunnel magnetoresistance (TMR) ratio over 200% after high temperature back-end-of-line (BEOL) processing up to 400 °C. A thin reference layer with low magnetic moment and strong perpendicular magnetic anisotropy (PMA) is key to reduce the total thickness of the full pMTJ stack. We demonstrated strong interfacial PMA and a perpendicular Ruderman-Kittel-Kasuya-Yosida exchange interaction in the Co/Ir system. Owing to the additional high PMA at the Ir/Co interface in combination with a conventional CoFeB/MgO interface in the Ir/Co/Mo/CoFeB/MgO reference layer, the full film pMTJ showed a TMR ratio over 210% after annealing at 400 °C for 150 min. The high TMR ratio can be attributed to the thin stack design by combining a thin reference layer with the efficient compensation by a thin pinned layer. The annealing stability may be explained by the absence of solid solution in the Co-Ir system and the low oxygen affinity of Mo in the reference layer and the free layer. High device performance with a TMR ratio over 210% was also confirmed after subjecting the patterned devices to BEOL processing temperatures of up to 400 °C. This proposed pMTJ design is suitable for both standalone and embedded STT-MRAM applications.

The first close-up images of Jupiter's polar regions: Results from the Juno mission JunoCam instrument

NASA Astrophysics Data System (ADS)

Orton, Glenn S.; Hansen, Candice; Caplinger, Michael; Ravine, Michael; Atreya, Sushil; Ingersoll, Andrew P.; Jensen, Elsa; Momary, Thomas; Lipkaman, Leslie; Krysak, Daniel; Zimdar, Robert; Bolton, Scott

2017-05-01

During Juno's first perijove encounter, the JunoCam instrument acquired the first images of Jupiter's polar regions at 50-70 km spatial scale at low emission angles. Poleward of 64-68° planetocentric latitude, where Jupiter's east-west banded structure breaks down, several types of discrete features appear on a darker background. Cyclonic oval features are clustered near both poles. Other oval-shaped features are also present, ranging in size from 2000 km down to JunoCam's resolution limits. The largest and brightest features often have chaotic shapes. Two narrow linear features in the north, associated with an overlying haze feature, traverse tens of degrees of longitude. JunoCam also detected an optically thin cloud or haze layer past the northern nightside terminator estimated to be 58 ± 21 km (approximately three scale heights) above the main cloud deck. JunoCam will acquire polar images on every perijove, allowing us to track the state and evolution of longer-lived features.

Development of advanced Navier-Stokes solver

NASA Technical Reports Server (NTRS)

Yoon, Seokkwan

1994-01-01

The objective of research was to develop and validate new computational algorithms for solving the steady and unsteady Euler and Navier-Stokes equations. The end-products are new three-dimensional Euler and Navier-Stokes codes that are faster, more reliable, more accurate, and easier to use. The three-dimensional Euler and full/thin-layer Reynolds-averaged Navier-Stokes equations for compressible/incompressible flows are solved on structured hexahedral grids. The Baldwin-Lomax algebraic turbulence model is used for closure. The space discretization is based on a cell-centered finite-volume method augmented by a variety of numerical dissipation models with optional total variation diminishing limiters. The governing equations are integrated in time by an implicit method based on lower-upper factorization and symmetric Gauss-Seidel relaxation. The algorithm is vectorized on diagonal planes of sweep using two-dimensional indices in three dimensions. Convergence rates and the robustness of the codes are enhanced by the use of an implicit full approximation storage multigrid method.

Monolithically integrated mid-infrared lab-on-a-chip using plasmonics and quantum cascade structures

PubMed Central

Schwarz, Benedikt; Reininger, Peter; Ristanić, Daniela; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried

2014-01-01

The increasing demand of rapid sensing and diagnosis in remote areas requires the development of compact and cost-effective mid-infrared sensing devices. So far, all miniaturization concepts have been demonstrated with discrete optical components. Here we present a monolithically integrated sensor based on mid-infrared absorption spectroscopy. A bi-functional quantum cascade laser/detector is used, where, by changing the applied bias, the device switches between laser and detector operation. The interaction with chemicals in a liquid is resolved via a dielectric-loaded surface plasmon polariton waveguide. The thin dielectric layer enhances the confinement and enables efficient end-fire coupling from and to the laser and detector. The unamplified detector signal shows a slope of 1.8–7 μV per p.p.m., which demonstrates the capability to reach p.p.m. accuracy over a wide range of concentrations (0–60%). Without any hybrid integration or subwavelength patterning, our approach allows a straightforward and cost-saving fabrication. PMID:24905443

Discrete-continuous variable structural synthesis using dual methods

NASA Technical Reports Server (NTRS)

Schmit, L. A.; Fleury, C.

1980-01-01

Approximation concepts and dual methods are extended to solve structural synthesis problems involving a mix of discrete and continuous sizing type of design variables. Pure discrete and pure continuous variable problems can be handled as special cases. The basic mathematical programming statement of the structural synthesis problem is converted into a sequence of explicit approximate primal problems of separable form. These problems are solved by constructing continuous explicit dual functions, which are maximized subject to simple nonnegativity constraints on the dual variables. A newly devised gradient projection type of algorithm called DUAL 1, which includes special features for handling dual function gradient discontinuities that arise from the discrete primal variables, is used to find the solution of each dual problem. Computational implementation is accomplished by incorporating the DUAL 1 algorithm into the ACCESS 3 program as a new optimizer option. The power of the method set forth is demonstrated by presenting numerical results for several example problems, including a pure discrete variable treatment of a metallic swept wing and a mixed discrete-continuous variable solution for a thin delta wing with fiber composite skins.

Buried anode lithium thin film battery and process for forming the same

DOEpatents

Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

2004-10-19

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Epitaxial growth of silicon for layer transfer

DOEpatents

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Growth of <111>-oriented Cu layer on thin TaWN films

NASA Astrophysics Data System (ADS)

Takeyama, Mayumi B.; Sato, Masaru

2017-07-01

In this study, we examine the growth of a <111>-oriented Cu layer on a thin TaWN ternary alloy barrier for good electromigration reliability. The strongly preferentially oriented Cu(111) layer is observed on a thin TaWN barrier even in the as-deposited Cu (100 nm)/TaWN (5 nm)/Si system. Also, this system tolerates annealing at 700 °C for 1 h without silicide reaction. It is revealed that the TaWN film is one of the excellent barriers with thermal stability and low resistivity. Simultaneously, the TaWN film is a candidate for a superior underlying material to achieve the Cu(111) preferential orientation.

Rapid thin-layer chromatographic photodensitometric method for the determination of metoclopramide and clebopride in the presence of some of their metabolic products.

PubMed

Huizing, G; Beckett, A H; Segura, J

1979-04-21

Metoclopramide and its newly developed analogue clebopride, together with some of their metabolic products are quantitated, following extraction from biological tissues and fluids, and subsequent separation on silica gel thin-layer chromatographic plates. Diazotisation, followed by coupling with N-(1-naphthyl)ethylenediammonium dichloride, carried out on the thin-layer plate, is utilised for visualisation. The intensity of the spots is measured by photodensitometric analysis. The effect of variation of various experimental conditions is studied. The method has proven to be satisfactory for the measurement of 20 ng/ml of these compounds in biological material; the results are well within the accepted limits of deviation.

Atomic layer deposition synthesized TiO{sub x} thin films and their application as microbolometer active materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanrikulu, Mahmud Yusuf, E-mail: mytanrikulu@adanabtu.edu.tr; Rasouli, Hamid Reza; Ghaffari, Mohammad

2016-05-15

This paper demonstrates the possible usage of TiO{sub x} thin films synthesized by atomic layer deposition as a microbolometer active material. Thin film electrical resistance is investigated as a function of thermal annealing. It is found that the temperature coefficient of resistance values can be controlled by coating/annealing processes, and the value as high as −9%/K near room temperature is obtained. The noise properties of TiO{sub x} films are characterized. It is shown that TiO{sub x} films grown by atomic layer deposition technique could have a significant potential to be used as a new active material for microbolometer-based applications.

Fabrication and electrochemical properties of insoluble fullerene-diamine adduct thin-films as buffer layer by alternate immersion process

NASA Astrophysics Data System (ADS)

Saito, Jo; Akiyama, Tsuyoshi; Suzuki, Atsushi; Oku, Takeo

2017-01-01

Insoluble fullerene-diamine adduct thin-films consisting of C60 and 1,2-diaminoethane were easily fabricated on an electrode by an alternate immersion process. Formation of the C60-diamine adduct films were confirmed using transmission absorption spectroscopy and atomic force microscopy. An inverted-type organic solar cells were fabricated by using the C60-diamine adduct film as the electron transport layer. The resultant photoelectric conversation performance of the solar cells suggested that photocurrent is generated via the photoexcitation of polythiophene. The result suggests that the present insoluble fullerene-diamine adduct films worked as buffer layer for organic thin-film solar cells.

Thin Layer Drying Model of Bacterial Cellulose Film

NASA Astrophysics Data System (ADS)

Hadi Jatmiko, Tri; Taufika Rosyida, Vita; Wheni Indrianingsih, Anastasia; Apriyana, Wuri

2017-12-01

The bacterial cellulose film produced by Acetobacter xylinum using coconut water as a carbon source was dried at a temperature of 60 to 100 C. The drying process of bacterial cellulose film occur at falling rate drying period. Increasing drying temperature will shorten the drying time. The drying data fitted with thin layer drying models that widely used, Newton, Page and Henderson and Pabis models. All thin layer drying models describe the experimental data well, but Page model is better than the other models on all various temperature with coefficients of determination (R2) range from 0.9908 to 0.9979, chi square range from 0.000212 to 0.000851 and RMSE range from 0.014307 to 0.0289458.

Hydrogen in thin Pd-based layers deposited on reticulated vitreous carbon-A new system for electrochemical capacitors

NASA Astrophysics Data System (ADS)

Łukaszewski, M.; Żurowski, A.; Czerwiński, A.

Reticulated vitreous carbon (RVC) has been used as a matrix for electrodeposition of thin layers of Pd and Pd-rich Pd-Rh alloys. It was found that RVC substrate does not affect qualitatively hydrogen absorption behavior of Pd-based deposits. Similarly to thin Pd or Pd alloy layers deposited on Au wires, the α-β phase transition controls the overall rate of hydrogen absorption and desorption into/from Pd-based/RVC electrodes. The possibility of the application of these materials as phase charging-discharging systems was investigated. The values of specific pseudocapacitance, specific power and specific energy were comparable with those for supercapacitors utilizing various redox reactions.

Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha

2015-06-24

In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin filmmore » solar cells.« less

Effect of solution concentration on MEH-PPV thin films

NASA Astrophysics Data System (ADS)

Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

MEH-PPV thin films were prepared with a mixture of THF (tetrahydrofuran) solution deposited by spin coating method. The surface topology of MEH-PPV thin film were characterize by atomic force microscopy (AFM) and optical properties of absorption spectra were characterized by using Ultraviolet-visible-near-infrared (UV-Vis-NIR). The MEH-PPV concentration variation affects the surface and optical properties of the thin film where 0.5 mg/ml MEH-PPV concentration have a good surface topology provided the same film also gives the highest absorption coefficient were then deposited to a TiO2 thin film forming composite layer. The composite layer then shows low current flow of short circuit current of Isc = -5.313E-7 A.

Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

DOE PAGES

Wang, Shuyu; Yu, Shifeng; Lu, Ming; ...

2016-11-30

In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

High efficiency thin-film crystalline Si/Ge tandem solar cell.

PubMed

Sun, G; Chang, F; Soref, R A

2010-02-15

We propose and simulate a photovoltaic solar cell comprised of Si and Ge pn junctions in tandem. With an anti-reflection film at the front surface, we have shown that optimal solar cells favor a thin Si layer and a thick Ge layer with a thin tunnel hetero-diode placed in between. We predict efficiency ranging from 19% to 28% for AM1.5G solar irradiance concentrated from 1 approximately 1000 Suns for a cell with a total thickness approximately 100 microm.

Few-Layer MoS2-Organic Thin-Film Hybrid Complementary Inverter Pixel Fabricated on a Glass Substrate.

PubMed

Lee, Hee Sung; Shin, Jae Min; Jeon, Pyo Jin; Lee, Junyeong; Kim, Jin Sung; Hwang, Hyun Chul; Park, Eunyoung; Yoon, Woojin; Ju, Sang-Yong; Im, Seongil

2015-05-13

Few-layer MoS2-organic thin-film hybrid complementary inverters demonstrate a great deal of device performance with a decent voltage gain of ≈12, a few hundred pW power consumption, and 480 Hz switching speed. As fabricated on glass, this hybrid CMOS inverter operates as a light-detecting pixel as well, using a thin MoS2 channel. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A two-layer structured PbI2 thin film for efficient planar perovskite solar cells.

PubMed

Ying, Chao; Shi, Chengwu; Wu, Ni; Zhang, Jincheng; Wang, Mao

2015-07-28

In this paper, a two-layer structured PbI2 thin film was constructed by the spin-coating procedure using a 0.80 M PbI2 solution in DMF and subsequent close-spaced vacuum thermal evaporation using PbI2 powder as a source. The bottom PbI2 thin film was compact with a sheet-like appearance, parallel to the FTO substrate, and can be easily converted to a compact perovskite thin film to suppress the charge recombination of the electrons of the TiO2 conduction band and the holes of the spiro-OMeTAD valence band. The top PbI2 thin film was porous with nano-sheet arrays, perpendicular to the FTO substrate, and can be easily converted to a porous perovskite thin film to improve the hole migration from the perovskite to spiro-OMeTAD and the charge separation at the perovskite/spiro-OMeTAD interface. The planar perovskite solar cells based on the two-layer structured PbI2 thin film exhibited a photoelectric conversion efficiency of 11.64%, along with an open-circuit voltage of 0.90 V, a short-circuit photocurrent density of 19.29 mA cm(-2) and a fill factor of 0.67.

Electrical and structural characterization of plasma polymerized polyaniline/TiO2 heterostructure diode: a comparative study of single and bilayer TiO2 thin film electrode.

PubMed

Ameen, Sadia; Akhtar, M Shaheer; Kimi, Young Soon; Yang, O-Bong; Shin, Hyung-Shik

2011-04-01

A heterostructure was fabricated using p-type plasma polymerized polyaniline (PANI) and n-type (single and bilayer) titanium dioxide (TiO2) thin film on FTO glass. The deposition of single and bilayer TiO2 thin film on FTO substrate was achieved through doctor blade followed by dip coating technique before subjected to plasma enhanced polymerization. To fabricate p-n heterostructure, a plasma polymerization of aniline was conducted using RF plasma at 13.5 MHz and at the power of 120 W on the single and bilayer TiO2 thin film electrodes. The morphological, optical and the structural characterizations revealed the formation of p-n heterostructures between PANI and TiO2 thin film. The PANI/bilayer TiO2 heterostructure showed the improved current-voltage (I-V) characteristics due to the substantial deposition of PANI molecules into the bilayer TiO2 thin film which provided good conducting pathway and reduced the degree of excitons recombination. The change of linear I-V behavior of PANI/TiO2 heterostructure to non linear behavior with top Pt contact layer confirmed the formation of Schottky contact at the interfaces of Pt layer and PANI/TiO2 thin film layers.

Thin film photovoltaic cells having increased durability and operating life and method for making same

DOEpatents

Barnett, Allen M.; Masi, James V.; Hall, Robert B.

1980-12-16

A solar cell having a copper-bearing absorber is provided with a composite transparent encapsulating layer specifically designed to prevent oxidation of the copper sulfide. In a preferred embodiment, the absorber is a layer of copper sulfide and the composite layer comprises a thin layer of copper oxide formed on the copper sulfide and a layer of encapsulating glass formed on the oxide. It is anticipated that such devices, when exposed to normal operating conditions of various terrestrial applications, can be maintained at energy conversion efficiencies greater than one-half the original conversion efficiency for periods as long as thirty years.

Functionally graded alumina-based thin film systems

DOEpatents

Moore, John J.; Zhong, Dalong

2006-08-29

The present invention provides coating systems that minimize thermal and residual stresses to create a fatigue- and soldering-resistant coating for aluminum die casting dies. The coating systems include at least three layers. The outer layer is an alumina- or boro-carbide-based outer layer that has superior non-wettability characteristics with molten aluminum coupled with oxidation and wear resistance. A functionally-graded intermediate layer or "interlayer" enhances the erosive wear, toughness, and corrosion resistance of the die. A thin adhesion layer of reactive metal is used between the die substrate and the interlayer to increase adhesion of the coating system to the die surface.

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

PubMed

George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

2015-06-24

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

Analytical Models of Cross-Layer Protocol Optimization in Real-Time Wireless Sensor Ad Hoc Networks

NASA Astrophysics Data System (ADS)

Hortos, William S.

The real-time interactions among the nodes of a wireless sensor network (WSN) to cooperatively process data from multiple sensors are modeled. Quality-of-service (QoS) metrics are associated with the quality of fused information: throughput, delay, packet error rate, etc. Multivariate point process (MVPP) models of discrete random events in WSNs establish stochastic characteristics of optimal cross-layer protocols. Discrete-event, cross-layer interactions in mobile ad hoc network (MANET) protocols have been modeled using a set of concatenated design parameters and associated resource levels by the MVPPs. Characterization of the "best" cross-layer designs for a MANET is formulated by applying the general theory of martingale representations to controlled MVPPs. Performance is described in terms of concatenated protocol parameters and controlled through conditional rates of the MVPPs. Modeling limitations to determination of closed-form solutions versus explicit iterative solutions for ad hoc WSN controls are examined.