Role of temperature and oxygen content on structural and electrical properties of LaBaCo2O5+δ thin films

NASA Astrophysics Data System (ADS)

Mace, Brennan; Harrell, Zach; Chen, Chonglin; Enriquez, Erik; Chen, Aiping; Jia, Quanxi

2018-02-01

The role of temperature and the oxygen content in the structural transformation and electrical conductivity of epitaxial double perovskite LaBaCo2O5+δ (0≤ δ ≤ 1) thin films was systematically investigated. Reciprocal space mapping and ω-2θ x-ray diffraction performed at different temperatures in vacuum indicate that oxygen vacancies in the films become ordered at high temperature in a reducing environment. The changes of the oxygen content and the degree of oxygen vacancy ordering in the films result in a strong in-plane anisotropic lattice deformation and a large thermal expansion coefficient along the c-axis direction. The electrical conductivity measurements reveal that these behaviors are related to the degree of oxygen vacancy formation and lattice deformation in the films.

Role of temperature and oxygen content on structural and electrical properties of LaBaCo2O5+δ thin films.

PubMed

Mace, Brennan; Harrell, Zach; Chen, Chonglin; Enriquez, Erik; Chen, Aiping; Jia, Quanxi

2018-02-12

The role of temperature and the oxygen content in the structural transformation and electrical conductivity of epitaxial double perovskite LaBaCo 2 O 5+δ (0≤ δ ≤ 1) thin films was systematically investigated. Reciprocal space mapping and ω-2θ x-ray diffraction performed at different temperatures in vacuum indicate that oxygen vacancies in the films become ordered at high temperature in a reducing environment. The changes of the oxygen content and the degree of oxygen vacancy ordering in the films result in a strong in-plane anisotropic lattice deformation and a large thermal expansion coefficient along the c-axis direction. The electrical conductivity measurements reveal that these behaviors are related to the degree of oxygen vacancy formation and lattice deformation in the films.

Time-dependent electrophoresis of a dielectric spherical particle embedded in Brinkman medium

NASA Astrophysics Data System (ADS)

Saad, E. I.; Faltas, M. S.

2018-04-01

An expression for electrophoretic apparent velocity slip in the time-dependent flow of an electrolyte solution saturated in a charged porous medium within an electric double layer adjacent to a dielectric plate under the influence of a tangential uniform electric field is derived. The velocity slip is used as a boundary condition to solve the electrophoretic motion of an impermeable dielectric spherical particle embedded in an electrolyte solution saturated in porous medium under the unsteady Darcy-Brinkman model. Throughout the system, a uniform electric field is applied and maintains with constant strength. Two cases are considered, when the electric double layer enclosing the particle is thin, but finite and when of a particle with a thick double layer. Expressions for the electrophoretic mobility of the particle as functions of the relevant parameters are found. Our results indicate that the time scale for the growth of mobility is significant and small for high permeability. Generally, the effect of the relaxation time for starting electrophoresis is negligible, irrespective of the thickness of the double layer and permeability of the medium. The effects of the elapsed time, permeability, mass density and Debye length parameters on the fluid velocity, the electrophoretic mobility and the acceleration are shown graphically.

DNA hybridization sensor based on pentacene thin film transistor.

PubMed

Kim, Jung-Min; Jha, Sandeep Kumar; Chand, Rohit; Lee, Dong-Hoon; Kim, Yong-Sang

2011-01-15

A DNA hybridization sensor using pentacene thin film transistors (TFTs) is an excellent candidate for disposable sensor applications due to their low-cost fabrication process and fast detection. We fabricated pentacene TFTs on glass substrate for the sensing of DNA hybridization. The ss-DNA (polyA/polyT) or ds-DNA (polyA/polyT hybrid) were immobilized directly on the surface of the pentacene, producing a dramatic change in the electrical properties of the devices. The electrical characteristics of devices were studied as a function of DNA immobilization, single-stranded vs. double-stranded DNA, DNA length and concentration. The TFT device was further tested for detection of λ-phage genomic DNA using probe hybridization. Based on these results, we propose that a "label-free" detection technique for DNA hybridization is possible through direct measurement of electrical properties of DNA-immobilized pentacene TFTs. Copyright © 2010 Elsevier B.V. All rights reserved.

Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel.

PubMed

Yu, H; Zhang, L; Li, X H; Xu, H Y; Liu, Y C

2016-04-01

The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitro-genated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area.

Oriented niobate ferroelectric thin films for electrical and optical devices

DOEpatents

Wessels, Bruce W.; Nystrom, Michael J.

2001-01-01

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or cyrstalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Automotive battery energy density — past, present and future

NASA Astrophysics Data System (ADS)

Peters, K.

Energy and power densities of automotive batteries at engine starting rates have doubled over the past twenty years. Most recent improvements can be credited to the use of both very thin plates with optimized grid design and low-resistance polyethylene separators with a thin backweb and a reduced rib height. Opportunities for further improvements using the same design approach and similar processing techniques are limited. The effect of some recent innovative developments on weight reduction and performance improvement are reviewed, together with possible changes to the electrical system of vehicles.

Effect of high energy ions on the electrical and morphological properties of Poly(3-Hexylthiophene) (P3HT) thin film

NASA Astrophysics Data System (ADS)

Sharma, Trupti; Singhal, R.; Vishnoi, R.; Sharma, G. D.; Biswas, S. K.

2018-05-01

The spin-coated thin films of Poly(3-Hexylthiophene) (P3HT) on the glass and Si (double side polished) substrates have been irradiated with 55 MeV Si+4 swift heavy ions (SHI) at fluences in the range from 1 × 1010 to 1 × 1012 ions/cm2. Structural modifications produced by energetic ions are observed by characterization of pristine and irradiated P3HT thin films. Different techniques like high-resolution X-ray diffraction (HR-XRD), micro-Raman spectroscopy and Fourier transform infrared spectroscopy (FTIR) were used to analyze the structural changes in the material. A significant increase in crystallinity and room temperature electrical conductivity of P3HT film has been detected on exposure to the heavy ions. The observed increase in the electrical conductivity with increased fluences is explained in the light of improved ordering of polymer chains after irradiation. Mott's variable range hopping model has been used to explain the conduction mechanism in the material in the temperature range of 230-350 K. The modification in surface properties also observed using AFM analysis and contact angle measurement. It is observed that nature of the P3HT thin films remains hydrophobic after irradiation.

Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

NASA Astrophysics Data System (ADS)

Pergolesi, Daniele; Roddatis, Vladimir; Fabbri, Emiliana; Schneider, Christof W.; Lippert, Thomas; Traversa, Enrico; Kilner, John A.

2015-02-01

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

Electrical and optical properties of C46H22N8O4KM (M=Co, Fe, Pb) molecular-material thin films prepared by the vacuum thermal evaporation technique.

PubMed

Sánchez-Vergara, M E; Ruiz Farfán, M A; Alvarez, J R; Ponce Pedraza, A; Ortiz, A; Alvarez Toledano, C

2007-03-01

In this work, the synthesis of new materials formed from metallic phthalocyanines (Pcs) and double potassium salt from 1,8-dihydroxianthraquinone is reported. The newly synthesized materials were characterized by scanning electron microscope (SEM), atomic force microscopy (AFM), infrared (IR) and Ultraviolet-visible (UV-vis) spectroscopy. The powder and thin-film samples of the synthesized materials, deposited by vacuum thermal evaporation, show the same intra-molecular bonds as in the IR spectroscopy studies, which suggests that the thermal evaporation process does not alter these bonds. The effect of temperature on conductivity and electrical conduction mechanism was measured in the thin films (approximately 137 nm thickness). They showed a semiconductor-like behaviour with an optical activation energy arising from indirect transitions of 2.15, 2.13 and 3.6eV for the C(46)H(22)N(8)O(4)KFe, C(46)H(22)N(8)O(4)KPb and C(46)H(22)N(8)O(4)KCo thin films.

Measurements of Induced-Charge Electroosmotic Flow Around a Metallic Rod

NASA Astrophysics Data System (ADS)

Beskok, Ali; Canpolat, Cetin

2012-11-01

A cylindrical gold-coated stainless steel rod was positioned at the center of a straight microchannel connecting two fluid reservoirs on either end. The microchannel was filled with 1 mM KCl containing 0.5 micron diameter carboxylate-modified spherical particles. Induced-charge electro-osmotic (ICEO) flow occurred around the metallic rod under a sinusoidal AC electric field applied using two platinum electrodes. The ICEO flows around the metallic rod were measured using micro particle image velocimetry (micro-PIV) technique as functions of the AC electric field strength and frequency. The present study provides experimental data about ICEO flow in the weakly nonlinear limit of thin double layers, in which, the charging dynamics of the double layer cannot be presented analytically. Flow around the rod is quadrupolar, driving liquid towards the rod along the electric field and forcing it away from the rod in the direction perpendicular to the imposed electric field. The measured ICEO flow velocity is proportional to the square of the electric field strength, and depends on the applied AC frequency.

Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

NASA Astrophysics Data System (ADS)

Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

2018-06-01

In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature

NASA Astrophysics Data System (ADS)

Sun, Jia; Wan, Qing; Lu, Aixia; Jiang, Jie

2009-11-01

Battery drivable low-voltage SnO2-based paper thin-film transistors with a near-zero threshold voltage (Vth=0.06 V) gated by microporous SiO2 dielectric with electric-double-layer (EDL) effect are fabricated at room temperature. The operating voltage is found to be as low as 1.5 V due to the huge gate specific capacitance (1.34 μF/cm2 at 40 Hz) related to EDL formation. The subthreshold gate voltage swing and current on/off ratio is found to be 82 mV/decade and 2.0×105, respectively. The electron field-effect mobility is estimated to be 47.3 cm2/V s based on the measured gate specific capacitance at 40 Hz.

Effect of cell thickness on the electrical and optical properties of thin film silicon solar cell

NASA Astrophysics Data System (ADS)

Zaki, A. A.; El-Amin, A. A.

2017-12-01

In this work Electrical and optical properties of silicon thin films with different thickness were measured. The thickness of the Si films varied from 100 to 800 μm. The optical properties of the cell were studied at different thickness. A maximum achievable current density (MACD) generated by a planar solar cell, was measured for different values of the cell thickness which was performed by using photovoltaic (PV) optics method. It was found that reducing the values of the cell thickness improves the open-circuit voltage (VOC) and the fill factor (FF) of the solar cell. The optical properties were measured for thin film Si (TF-Si) at different thickness by using the double beam UV-vis-NIR spectrophotometer in the wavelength range of 300-2000 nm. Some of optical parameters such as refractive index with dispersion relation, the dispersion energy, the oscillator energy, optical band gap energy were calculated by using the spectra for the TF-Si with different thickness.

Electrostatic Structure and Double-Probe Performance in Tenuous Plasmas

NASA Astrophysics Data System (ADS)

Cully, C. M.; Ergun, R. E.

2006-12-01

Many in-situ plasma instruments are affected by the local electrostatic structure surrounding the spacecraft. In order to better understand this structure, we have developed a fully 3-dimensional self-consistent model that uses realistic spacecraft geometry, including thin (<1 mm) wires and long (>100m) booms, with open boundary conditions. One of the more surprising results is that in tenuous plasmas, the charge on the booms can dominate over the charge on the spacecraft body. For instruments such as electric field double probes and boom-mounted low-energy particle detectors, this challenges the existing paradigm: long booms do not allow the probes to escape the spacecraft potential. Instead, the potential structure simply expands as the boom is deployed. We then apply our model to the double-probe Electric Field and Waves (EFW) instruments on Cluster, and predict the magnitudes of the main error sources. The overall error budget is consistent with experiment, and the model yields some additional interesting insights. We show that the charge in the photoelectron cloud is relatively unimportant, and that the spacecraft potential is typically underestimated by about 20% by double-probe experiments.

High density circuit technology, part 4

NASA Technical Reports Server (NTRS)

Wade, T. E.

1982-01-01

An accurate study and evaluation of dielectric thin films is conducted in order to find the material or combination of materials which would optimize NASA'S double layer metal process. Emphasis is placed on polyimide dielectrics because of their reported outstanding dielectric characteristics (including electrical, chemical, thermal, and mechanical) and ease of processing, as well as their rapid acceptance by the semiconductor industry.

Nonlinear space charge dynamics in mixed ionic-electronic conductors: Resistive switching and ferroelectric-like hysteresis of electromechanical response

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morozovska, Anna N.; Morozovsky, Nicholas V.; Eliseev, Eugene A.

We performed self-consistent modelling of nonlinear electrotransport and electromechanical response of thin films of mixed ionic-electronic conductors (MIEC) allowing for steric effects of mobile charged defects (ions, protons, or vacancies), electron degeneration, and Vegard stresses. We establish correlations between the features of the nonlinear space-charge dynamics, current-voltage, and bending-voltage curves for different types of the film electrodes. A pronounced ferroelectric-like hysteresis of the bending-voltage loops and current maxima on the double hysteresis current-voltage loops appear for the electron-transport electrodes. The double hysteresis loop with pronounced humps indicates a memristor-type resistive switching. The switching occurs due to the strong nonlinear couplingmore » between the electronic and ionic subsystems. A sharp meta-stable maximum of the electron density appears near one open electrode and moves to another one during the periodic change of applied voltage. Our results can explain the nonlinear nature and correlation of electrical and mechanical memory effects in thin MIEC films. The analytical expression proving that the electrically induced bending of MIEC films can be detected by interferometric methods is derived.« less

Enhanced electron mobility at the two-dimensional metallic surface of BaSnO3 electric-double-layer transistor at low temperatures

NASA Astrophysics Data System (ADS)

Fujiwara, Kohei; Nishihara, Kazuki; Shiogai, Junichi; Tsukazaki, Atsushi

2017-05-01

Wide-bandgap oxides exhibiting high electron mobility hold promise for the development of useful electronic and optoelectronic devices as well as for basic research on two-dimensional electron transport phenomena. A perovskite-type tin oxide, BaSnO3, is currently one of such targets owing to distinctly high mobility at room temperature. The challenge to overcome towards the use of BaSnO3 thin films in applications is suppression of dislocation scattering, which is one of the dominant scattering origins for electron transport. Here, we show that the mobility of the BaSnO3 electric-double-layer transistor reaches 300 cm2 V-1 s-1 at 50 K. The improved mobility indicates that charged dislocation scattering is effectively screened by electrostatically doped high-density charge carriers. We also observed metallic conduction persisting down to 2 K, which is attributed to the transition to the degenerate semiconductor. The experimental verification of bulk-level mobility at the densely accumulated surface sheds more light on the importance of suppression of dislocation scattering by interface engineering in doped BaSnO3 thin films for transparent electrode applications.

Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films

DOEpatents

Wessels, B.W.; Nystrom, M.J.

1998-05-19

Sr{sub x}Ba{sub 1{minus}x}Nb{sub 2}O{sub 6}, where x is greater than 0.25 and less than 0.75, and KNbO{sub 3} ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface are disclosed. Such films can be used in electronic, electro-optic, and frequency doubling components. 8 figs.

Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films

DOEpatents

Wessels, Bruce W.; Nystrom, Michael J.

1998-01-01

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Directly Grown Nanostructured Electrodes for High Volumetric Energy Density Binder-Free Hybrid Supercapacitors: A Case Study of CNTs//Li4Ti5O12

NASA Astrophysics Data System (ADS)

Zuo, Wenhua; Wang, Chong; Li, Yuanyuan; Liu, Jinping

2015-01-01

Hybrid supercapacitor (HSC), which typically consists of a Li-ion battery electrode and an electric double-layer supercapacitor electrode, has been extensively investigated for large-scale applications such as hybrid electric vehicles, etc. Its application potential for thin-film downsized energy storage systems that always prefer high volumetric energy/power densities, however, has not yet been explored. Herein, as a case study, we develop an entirely binder-free HSC by using multiwalled carbon nanotube (MWCNT) network film as the cathode and Li4Ti5O12 (LTO) nanowire array as the anode and study the volumetric energy storage capability. Both the electrode materials are grown directly on carbon cloth current collector, ensuring robust mechanical/electrical contacts and flexibility. Our 3 V HSC device exhibits maximum volumetric energy density of ~4.38 mWh cm-3, much superior to those of previous supercapacitors based on thin-film electrodes fabricated directly on carbon cloth and even comparable to the commercial thin-film lithium battery. It also has volumetric power densities comparable to that of the commercial 5.5 V/100 mF supercapacitor (can be operated within 3 s) and has excellent cycling stability (~92% retention after 3000 cycles). The concept of utilizing binder-free electrodes to construct HSC for thin-film energy storage may be readily extended to other HSC electrode systems.

Extended-gate-type IGZO electric-double-layer TFT immunosensor with high sensitivity and low operation voltage

NASA Astrophysics Data System (ADS)

Liang, Lingyan; Zhang, Shengnan; Wu, Weihua; Zhu, Liqiang; Xiao, Hui; Liu, Yanghui; Zhang, Hongliang; Javaid, Kashif; Cao, Hongtao

2016-10-01

An immunosensor is proposed based on the indium-gallium-zinc-oxide (IGZO) electric-double-layer thin-film transistor (EDL TFT) with a separating extended gate. The IGZO EDL TFT has a field-effect mobility of 24.5 cm2 V-1 s-1 and an operation voltage less than 1.5 V. The sensors exhibit the linear current response to label-free target immune molecule in the concentrations ranging from 1.6 to 368 × 10-15 g/ml with a detection limit of 1.6 × 10-15 g/ml (0.01 fM) under an ultralow operation voltage of 0.5 V. The IGZO TFT component demonstrates a consecutive assay stability and recyclability due to the unique structure with the separating extended gate. With the excellent electrical properties and the potential for plug-in-card-type multifunctional sensing, extended-gate-type IGZO EDL TFTs can be promising candidates for the development of a label-free biosensor for public health applications.

Formation of double ring patterns on Co{sub 2}MnSi Heusler alloy thin film by anodic oxidation under scanning probe microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Toutam, Vijaykumar; Singh, Sandeep; Pandey, Himanshu

Double ring formation on Co{sub 2}MnSi (CMS) films is observed at electrical breakdown voltage during local anodic oxidation (LAO) using atomic force microscope (AFM). Corona effect and segregation of cobalt in the vicinity of the rings is studied using magnetic force microscopy and energy dispersive spectroscopy. Double ring formation is attributed to the interaction of ablated material with the induced magnetic field during LAO. Steepness of forward bias transport characteristics from the unperturbed region of the CMS film suggest a non equilibrium spin contribution. Such mesoscopic textures in magnetic films by AFM tip can be potentially used for memory storagemore » applications.« less

Electrical properties of double layer dielectric structures for space technology

NASA Astrophysics Data System (ADS)

Lian, Anqing

1993-04-01

Polymeric films such as polyimide (PI) and polyethylene terephthalate (PET) are used in space technology as thermal blankets. Thin SiO2 and SiN coatings plasma deposited onto PI and PET surfaces were proposed to protect the blanket materials against the space environment. The electrical properties of this kind of dual layer dielectric structure were investigated to understand the mechanisms for suppressing charge accumulation and flashover. Bulk and surface electrical conductivities of thin single-layer PI and PET samples and of the dual layer SiO2 and SiN combinations with PI and PET were measured in a range of applied electrical fields. The capacitance voltage (CV) technique was used for analyzing charge transport and distribution in the structures. The electric current in the bulk of the SiO2/PI and SiN/PI samples was found to depend on the polarity of the electric field. Other samples did not exhibit any such polarity effect. The polarity dependence is attributed to charge trapping at the PI/plasma deposit interface. The CV characteristics of the Al-PI-SiO2-Si structure confirm that charges which can modify the local electric field can be trapped near the interface. A model is proposed to interpret the properties of the currents in dual layer structures. This model can semi-quantitatively explain all the observed results.

LaAlO{sub 3}/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pelloquin, Sylvain; Baboux, Nicolas; Albertini, David

2013-01-21

A study of the structural and electrical properties of amorphous LaAlO{sub 3} (LAO)/Si thin films fabricated by molecular beam deposition (MBD) is presented. Two substrate preparation procedures have been explored namely a high temperature substrate preparation technique-leading to a step and terraces surface morphology-and a chemical HF-based surface cleaning. The LAO deposition conditions were improved by introducing atomic plasma-prepared oxygen instead of classical molecular O{sub 2} in the chamber. An Au/Ni stack was used as the top electrode for its electrical characteristics. The physico-chemical properties (surface topography, thickness homogeneity, LAO/Si interface quality) and electrical performance (capacitance and current versus voltagemore » and TunA current topography) of the samples were systematically evaluated. Deposition conditions (substrate temperature of 550 Degree-Sign C, oxygen partial pressure settled at 10{sup -6} Torr, and 550 W of power applied to the O{sub 2} plasma) and post-depositions treatments were investigated to optimize the dielectric constant ({kappa}) and leakage currents density (J{sub Gate} at Double-Vertical-Line V{sub Gate} Double-Vertical-Line = Double-Vertical-Line V{sub FB}- 1 Double-Vertical-Line ). In the best reproducible conditions, we obtained a LAO/Si layer with a dielectric constant of 16, an equivalent oxide thickness of 8.7 A, and J{sub Gate} Almost-Equal-To 10{sup -2}A/cm{sup 2}. This confirms the importance of LaAlO{sub 3} as an alternative high-{kappa} for ITRS sub-22 nm technology node.« less

Electrorotation of a metal sphere immersed in an electrolyte of finite Debye length.

PubMed

García-Sánchez, Pablo; Ramos, Antonio

2015-11-01

We theoretically study the rotation induced on a metal sphere immersed in an electrolyte and subjected to a rotating electric field. The rotation arises from the interaction of the field with the electric charges induced at the metal-electrolyte interface, i.e., the induced electrical double layer (EDL). Particle rotation is due to the torque on the induced dipole, and also from induced-charge electro-osmostic flow (ICEO). The interaction of the electric field with the induced dipole on the system gives rise to counterfield rotation, i.e., the direction opposite to the rotation of the electric field. ICEO generates co-field rotation of the sphere. For thin EDL, ICEO generates negligible rotation. For increasing size of EDL, co-field rotation appears and, in the limit of very thick EDL, it compensates the counter-field rotation induced by the electrical torque. We also report computations of the rotating fluid velocity field around the sphere.

Applications for alliform carbon

DOEpatents

Gogotsi, Yury; Mochalin, Vadym; McDonough, IV, John Kenneth; Simon, Patrice; Taberna, Pierre Louis

2017-02-21

This invention relates to novel applications for alliform carbon, useful in conductors and energy storage devices, including electrical double layer capacitor devices and articles incorporating such conductors and devices. Said alliform carbon particles are in the range of 2 to about 20 percent by weight, relative to the weight of the entire electrode. Said novel applications include supercapacitors and associated electrode devices, batteries, bandages and wound healing, and thin-film devices, including display devices.

Directly Grown Nanostructured Electrodes for High Volumetric Energy Density Binder-Free Hybrid Supercapacitors: A Case Study of CNTs//Li4Ti5O12

PubMed Central

Zuo, Wenhua; Wang, Chong; Li, Yuanyuan; Liu, Jinping

2015-01-01

Hybrid supercapacitor (HSC), which typically consists of a Li-ion battery electrode and an electric double-layer supercapacitor electrode, has been extensively investigated for large-scale applications such as hybrid electric vehicles, etc. Its application potential for thin-film downsized energy storage systems that always prefer high volumetric energy/power densities, however, has not yet been explored. Herein, as a case study, we develop an entirely binder-free HSC by using multiwalled carbon nanotube (MWCNT) network film as the cathode and Li4Ti5O12 (LTO) nanowire array as the anode and study the volumetric energy storage capability. Both the electrode materials are grown directly on carbon cloth current collector, ensuring robust mechanical/electrical contacts and flexibility. Our 3 V HSC device exhibits maximum volumetric energy density of ~4.38 mWh cm−3, much superior to those of previous supercapacitors based on thin-film electrodes fabricated directly on carbon cloth and even comparable to the commercial thin-film lithium battery. It also has volumetric power densities comparable to that of the commercial 5.5 V/100 mF supercapacitor (can be operated within 3 s) and has excellent cycling stability (~92% retention after 3000 cycles). The concept of utilizing binder-free electrodes to construct HSC for thin-film energy storage may be readily extended to other HSC electrode systems. PMID:25586374

Fascicular nerve stimulation and recording using a novel double-aisle regenerative electrode

NASA Astrophysics Data System (ADS)

Delgado-Martínez, I.; Righi, M.; Santos, D.; Cutrone, A.; Bossi, S.; D'Amico, S.; Del Valle, J.; Micera, S.; Navarro, X.

2017-08-01

Objective. As artificial prostheses become more refined, they are most often used as a therapeutic option for hand amputation. By contrast to extra- or intraneural interfaces, regenerative nerve electrodes are designed to enable electrical interfaces with regrowing axonal bundles of injured nerves, aiming to achieve high selectivity for recording and stimulation. However, most of the developed designs pose an obstacle to the regrowth mechanisms due to low transparency and cause impairment to the nerve regeneration. Approach. Here we present the double-aisle electrode, a new type of highly transparent, non-obstructive regenerative electrode. Using a double-side thin-film polyimide planar multi-contact electrode, two nerve fascicles can regenerate without physical impairment through two electrically isolated aisles. Main results. We show that this electrode can be used to selectively record and stimulate fascicles, acutely as well as chronically, and allow regeneration in nerve gaps of several millimeters without impairment. Significance. This multi-aisle regenerative electrode may be suitable for neuroprosthetic applications, such as prostheses, for the restoration of hand function after amputation or severe nerve injuries.

Graphene-Based Ultra-Light Batteries for Aircraft

NASA Technical Reports Server (NTRS)

Calle, Carlos I.; Kaner, Richard B.

2014-01-01

Develop a graphene-based ultracapacitor prototype that is flexible, thin, lightweight, durable, low cost, and safe and that will demonstrate the feasibility for use in aircraft center dot These graphene-based devices store charge on graphene sheets and take advantage of the large accessible surface area of graphene (2,600 m2/g) to increase the electrical energy that can be stored. center dot The proposed devices should have the electrical storage capacity of thin-film-ion batteries but with much shorter charge/discharge cycle times as well as longer lives center dot The proposed devices will be carbon-based and so will not have the same issues with flammability or toxicity as the standard lithium-based storage cells There are two main established methods for the storage and delivery of electrical energy: center dot Batteries - Store energy with electrochemical reactions - High energy densities - Slow charge/discharge cycles - Used in applications requiring large amounts of energy ? aircraft center dot Electrochemical capacitors - Store energy in electrochemical double layers - Fast charge/discharge cycles - Low energy densities - Used in electronics devices - Large capacitors are used in truck engine cranking

Effective electromagnetic properties of microheterogeneous materials with surface phenomena

NASA Astrophysics Data System (ADS)

Levin, Valery; Markov, Mikhail; Mousatov, Aleksandr; Kazatchenko, Elena; Pervago, Evgeny

2017-10-01

In this paper, we present an approach to calculate the complex dielectric permittivity of a micro-heterogeneous medium composed of non-conductive solid inclusions embedded into the conductive liquid continuous host. To take into account the surface effects, we approximate the inclusion by a layered ellipsoid consisting of a dielectric core and an infinitesimally thin outer shell corresponding to an electrical double layer (EDL). To predict the effective complex dielectric permittivity of materials with a high concentration of inclusions, we have modified the Effective Field Method (EFM) for the layered ellipsoidal particles with complex electrical properties. We present the results of complex permittivity calculations for the composites with randomly and parallel oriented ellipsoidal inclusions. To analyze the influence of surface polarization, we have accomplished modeling in a wide frequency range for different existing physic-chemical models of double electrical layer. The results obtained show that the tensor of effective complex permittivity of a micro-heterogeneous medium with surface effects has complicate dependences on the component electrical properties, spatial material texture, and the inclusion shape (ellipsoid aspect ratio) and size. The dispersion of dielectric permittivity corresponds to the frequency dependence for individual inclusion of given size, and does not depend on the inclusion concentration.

Electroosmosis over charge-modulated surfaces with finite electrical double layer thicknesses: Asymptotic and numerical investigations

NASA Astrophysics Data System (ADS)

Ghosh, Uddipta; Mandal, Shubhadeep; Chakraborty, Suman

2017-06-01

Here we attempt to solve the fully coupled Poisson-Nernst-Planck-Navier-Stokes equations, to ascertain the influence of finite electric double layer (EDL) thickness on coupled charge and fluid dynamics over patterned charged surfaces. We go beyond the well-studied "weak-field" limit and obtain numerical solutions for a wide range of EDL thicknesses, applied electric field strengths, and the surface potentials. Asymptotic solutions to the coupled system are also derived using a combination of singular and regular perturbation, for thin EDLs and low surface potential, and good agreement between the two solutions is observed. Counterintuitively to common arguments, our analysis reveals that finite EDL thickness may either increase or decrease the "free-stream velocity" (equivalent to net throughput), depending on the strength of the applied electric field. We also unveil a critical EDL thickness for which the effect of finite EDL thickness on the free-stream velocity is the most prominent. Finally, we demonstrate that increasing the surface potential and the applied field tends to influence the overall flow patterns in the contrasting manners. These results may be of profound importance in developing a comprehensive theoretical basis for designing electro-osmotically actuated microfluidic mixtures.

Critical current enhancement driven by suppression of superconducting fluctuation in ion-gated ultrathin FeSe

NASA Astrophysics Data System (ADS)

Harada, T.; Shiogai, J.; Miyakawa, T.; Nojima, T.; Tsukazaki, A.

2018-05-01

The framework of phase transition, such as superconducting transition, occasionally depends on the dimensionality of materials. Superconductivity is often weakened in the experimental conditions of two-dimensional thin films due to the fragile superconducting state against defects and interfacial effects. In contrast to this general trend, superconductivity in the thin limit of FeSe exhibits an opposite trend, such as an increase in critical temperature (T c) and the superconducting gap exceeding the bulk values; however, the dominant mechanism is still under debate. Here, we measured thickness-dependent electrical transport properties of the ion-gated FeSe thin films to evaluate the superconducting critical current (I c) in the ultrathin FeSe. Upon systematically decreasing the FeSe thickness by the electrochemical etching technique in the Hall bar-shaped electric double-layer transistors, we observed a dramatic enhancement of I c reaching about 10 mA and corresponding to about 107 A cm‑2 in the thinnest condition. By analyzing the transition behavior, we clarify that the suppressed superconducting fluctuation is one of the origins of the large I c in the ion-gated ultrathin FeSe films. These results indicate the existence of a robust superconducting state possibly with dense Cooper pairs at the thin limit of FeSe.

Sensor development for in situ detection of concentration polarization and fouling of reverse osmosis membranes

NASA Astrophysics Data System (ADS)

Detrich, Kahlil T.; Goulbourne, Nakhiah C.

2009-03-01

The purpose of this research is to evaluate three polymer electroding techniques in developing a novel in situ sensor for an RO system using the electrical response of a thin film composite sensor. Electrical impedance spectroscopy (EIS) was used to measure the sensor response when exposed to sodium chloride solutions with concentrations from 0.1 M to 0.8 M in both single and double bath configurations. An insulated carbon grease sensor was mechanically stable while a composite Direct Assembly Process (DAP) sensor was fragile upon hydration. Scanning electron microscopy results from an impregnation-reduction technique showed gold nanoparticles were deposited most effectively when presoaked in a potassium hydroxide solution and on an uncoated membrane; surface resistances remained too high for sensor implementation. Through thickness carbon grease sensors showed a transient response to changes in concentration, and no meaningful concentration sensitivity was noted for the time scales over which EIS measurements were taken. Surface carbon grease electrodes attached to the polyamide thin film were not sensitive to concentration. The impedance spectra indicated the carbon grease sensor was unable to detect changes in concentration in double bath experiments when implemented with the polyamide surface exposed to salt solutions. DAP sensors lacked a consistent response to changes in concentration too. A reverse double bath experiment with the polysulfone layer exposed to a constant concentration exhibited a transient impedance response similar to through thickness carbon grease sensors in a single bath at constant concentration. These results suggest that the microporous polysulfone layer is responsible for sensor response to concentration.

Electrokinetic transport in unsteady flow through peristaltic microchannel

NASA Astrophysics Data System (ADS)

Tripathi, Dharmendra; Mulchandani, Janak; Jhalani, Shubham

2016-04-01

We analyze the electrokinetic transport of aqueous electrolyte fluids with Newtonian model in presence of peristalsis through microchannel. Debye-Hückel linearization is employed to simplify the problem. Low Reynolds number and large wavelength approximations are taken into account subjected to microfluidics applications. Electrical double layer (EDL) is considered very thin and electroosmotic slip velocity (i.e. Helmholtz-Smoluchowski velocity) at the wall is subjected to study the effect of applied electrical field. The solutions for axial velocity and pressure difference along the channel length are obtained analytically and the effects of adding and opposing the flow by applied electric field have been discussed. It is revealed that the axial velocity and pressure gradient enhances with adding electric field and an opposite behavior is found in the flow direction on opposing the electric field. These results may also help towards designing organ-on-a-chip like devices for better drug design.

Influences of film thickness on the structural, electrical and optical properties of CuAlO2 thin films

NASA Astrophysics Data System (ADS)

Dong, Guobo; Zhang, Ming; Wang, Mei; Li, Yingzi; Gao, Fangyuan; Yan, Hui; Diao, Xungang

2014-07-01

CuAlO2 films with different thickness were prepared by the radio frequency magnetron sputtering technique. The structural, electrical and optical properties of CuAlO2 were studied by X-ray diffraction, atomic force microscope, UV-Vis double-beam spectrophotometer and Hall measurements. The results indicate that the single phase hexagonal CuAlO2 is formed and the average grain size of CuAlO2 films increases with increasing film thickness. The results also exhibit that the lowering of bandgap and the increase of electrical conductivity of CuAlO2 films with the increase of their thickness, which are attributed to the improvement of the grain size and the anisotropic electrical property. According to the electrical and optical properties, the biggest figure of merit is achieved for the CuAlO2 film with the appropriate thickness of 165 nm.

High-sensitivity pH sensor using separative extended-gate field-effect transistors with single-walled carbon-nanotube networks

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2018-04-01

We fabricate high-sensitivity pH sensors using single-walled carbon-nanotube (SWCNT) network thin-film transistors (TFTs). The sensing and transducer parts of the pH sensor are composed of separative extended-sensing gates (ESGs) with SnO2 ion-sensitive membranes and double-gate structure TFTs with thin SWCNT network channels of ∼1 nm and AlO x top-gate insulators formed by the solution-deposition method. To prevent thermal process-induced damages on the SWCNT channel layer due to the post-deposition annealing process and improve the electrical characteristics of the SWCNT-TFTs, microwave irradiation is applied at low temperatures. As a result, a pH sensitivity of 7.6 V/pH, far beyond the Nernst limit, is obtained owing to the capacitive coupling effect between the top- and bottom-gate insulators of the SWCNT-TFTs. Therefore, double-gate structure SWCNT-TFTs with separated ESGs are expected to be highly beneficial for high-sensitivity disposable biosensor applications.

Effect of annealing temperature on physical properties of solution processed nickel oxide thin films

NASA Astrophysics Data System (ADS)

Sahoo, Pooja; Thangavel, R.

2018-05-01

In this report, NiO thin films were prepared at different annealing temperatures from nickel acetate precursor by sol-gel spin coating method. These films were characterized by different analytical techniques to obtain their structural, optical morphological and electrical properties using X-ray diffractometer (XRD), Field emission scanning electron microscopy (FESEM), UV-Vis NIR double beam spectrophotometer and Keithley 2450 source meter respectively. FESEM images clearly indicates the formation of a homogenous and porous films. Due to their porosity, they can be used in sensing applications. The optical absorption spectra elucidated that the films are highly transparent and have a suitable band gap which are in similar agreement with earlier reports. The current enhancement under illumination shows the suitability of nanostructured NiO thin films in its application in photovoltaics.

Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure.

PubMed

Chang, Sheng-Po; Shan, Deng

2018-04-01

This paper presents the electrical characteristics of doping nitrogen in an amorphous InGaZnO thin film transistor. The IGZO:N film, which acted as a channel layer, was deposited using RF sputtering with a nitrogen and argon gas mixture at room temperature. The optimized parameters of the IGZO:N/IGZO TFT are as follows: threshold voltage is 0.5 V, field effect mobility is 14.34 cm2V-1S-1. The on/off current ratio is 106 and subthreshold swing is 1.48 V/decade. The positive gate bias stress stability of InGaZnO doping with nitrogen shows improvement compared to doping with oxygen.

Development of double-pulse lasers ablation system for generating gold ion source under applying an electric field

NASA Astrophysics Data System (ADS)

Khalil, A. A. I.

2015-12-01

Double-pulse lasers ablation (DPLA) technique was developed to generate gold (Au) ion source and produce high current under applying an electric potential in an argon ambient gas environment. Two Q-switched Nd:YAG lasers operating at 1064 and 266 nm wavelengths are combined in an unconventional orthogonal (crossed-beam) double-pulse configuration with 45° angle to focus on a gold target along with a spectrometer for spectral analysis of gold plasma. The properties of gold plasma produced under double-pulse lasers excitation were studied. The velocity distribution function (VDF) of the emitted plasma was studied using a dedicated Faraday-cup ion probe (FCIP) under argon gas discharge. The experimental parameters were optimized to attain the best signal to noise (S/N) ratio. The results depicted that the VDF and current signals depend on the discharge applied voltage, laser intensity, laser wavelength and ambient argon gas pressure. A seven-fold increases in the current signal by increasing the discharge applied voltage and ion velocity under applying double-pulse lasers field. The plasma parameters (electron temperature and density) were also studied and their dependence on the delay (times between the excitation laser pulse and the opening of camera shutter) was investigated as well. This study could provide significant reference data for the optimization and design of DPLA systems engaged in laser induced plasma deposition thin films and facing components diagnostics.

Emergence of a Stern Layer from the Incorporation of Hydration Interactions into the Gouy-Chapman Model of the Electrical Double Layer.

PubMed

Brown, Matthew A; Bossa, Guilherme Volpe; May, Sylvio

2015-10-27

In one of the most commonly used phenomenological descriptions of the electrical double layer, a charged solid surface and a diffuse region of mobile ions are separated from each other by a thin charge-depleted Stern layer. The Stern layer acts as a capacitor that improves the classical Gouy-Chapman model by increasing the magnitude of the surface potential and limiting the maximal counterion concentration. We show that very similar Stern-like properties of the diffuse double layer emerge naturally from adding a nonelectrostatic hydration repulsion to the electrostatic Coulomb potential. The interplay of electrostatic attraction and hydration repulsion of the counterions and the surface leads to the formation of a diffuse counterion layer that remains well separated from the surface. In addition, hydration repulsions between the ions limit and control the maximal ion concentration and widen the width of the diffuse double layer. Our mean-field model, which we express in terms of electrostatic and hydration potentials, is physically consistent and conceptually similar to the classical Gouy-Chapman model. It allows the incorporation of ion specificity, accounts for hydration properties of charged surfaces, and predicts Stern layer properties, which we analyze in terms of the effective size of the hydrated counterions.

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE PAGES

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

2015-08-12

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

Electrical responses of artificial DNA nanostructures on solution-processed In-Ga-Zn-O thin-film transistors with multistacked active layers.

PubMed

Jung, Joohye; Kim, Si Joon; Yoon, Doo Hyun; Kim, Byeonghoon; Park, Sung Ha; Kim, Hyun Jae

2013-01-01

We propose solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with multistacked active layers for detecting artificial deoxyribonucleic acid (DNA). Enhanced sensing ability and stable electrical performance of TFTs were achieved through use of multistacked active layers. Our IGZO TFT had a turn-on voltage (V(on)) of -0.8 V and a subthreshold swing (SS) value of 0.48 V/decade. A dry-wet method was adopted to immobilize double-crossover DNA on the IGZO surface, after which an anomalous hump effect accompanying a significant decrease in V(on) (-13.6 V) and degradation of SS (1.29 V/decade) was observed. This sensing behavior was attributed to the middle interfaces of the multistacked active layers and the negatively charged phosphate groups on the DNA backbone, which generated a parasitic path in the TFT device. These results compared favorably with those reported for conventional field-effect transistor-based DNA sensors with remarkable sensitivity and stability.

Suspended sub-50 nm vanadium dioxide membrane transistors: fabrication and ionic liquid gating studies

NASA Astrophysics Data System (ADS)

Sim, Jai S.; Zhou, You; Ramanathan, Shriram

2012-10-01

We demonstrate a robust lithographic patterning method to fabricate self-supported sub-50 nm VO2 membranes that undergo a phase transition. Utilizing such self-supported membranes, we directly observed a shift in the metal-insulator transition temperature arising from stress relaxation and consistent opening of the hysteresis. Electric double layer transistors were then fabricated with the membranes and compared to thin film devices. The ionic liquid allowed reversible modulation of channel resistance and distinguishing bulk processes from the surface effects. From the shift in the metal-insulator transition temperature, the carrier density doped through electrolyte gating is estimated to be 1 × 1020 cm-3. Hydrogen annealing studies showed little difference in resistivity between the film and the membrane indicating rapid diffusion of hydrogen in the vanadium oxide rutile lattice consistent with previous observations. The ability to fabricate electrically-wired, suspended VO2 ultra-thin membranes creates new opportunities to study mesoscopic size effects on phase transitions and may also be of interest in sensor devices.

A novel material screening platform for nanoporous gold-based neural electrodes

NASA Astrophysics Data System (ADS)

Chapman, Christopher Abbott Reece

Neural-electrical interfaces have emerged in the past decades as a promising modality to facilitate the understanding of the electropathophysiology of neurological disorders as well as the normal functioning of the central nervous system, and enable the treatment of neurological defects through electrical stimulation or electrically-controlled drug delivery. However, chronically implanted electrodes face a myriad of design challenges, including their coupling to neural tissue (biocompatibility), small form factor requirement, and their electrical properties (maintaining a low electrical impedance). Planar electrode materials such as planar platinum and gold experience a large increase in electrical impedance when electrode dimensions are reduced to increase spatial resolution of neural recordings. A decrease in electrode surface area reduces the total capacitance of the electrode double layer resulting in an increase in electrode impedance. This high impedance can reduce the signal amplitude and increase the thermal noise, resulting in degradation of signal-to-noise ratio. Conventionally, this increase in electrical impedance at small electrode dimensions has been mitigated by coatings with rough morphologies such as platinum black, conducting polymers, and titanium nitride. Porous surfaces have high effective surface area enabling low impedance at small electrode dimensions. However, achieving long-term stability of cellular coupling to the electrode surface has remained difficult. Designing electrodes that can physically couple with neurons successfully and maintain low impedance at small electrode dimensions necessitates consideration of novel electrode coatings, such as carbon nanotubes and gold nanopillars. Another promising material, and focus of this proposal, is thin film nanoporous gold (np-Au). Nanoporous gold is a promising material for addressing these limitations because of its inherently large effective surface area allows for lower impedances at small form factors, and its modifiable surface morphology can be used to control cell-electrode coupling. Additionally, thin film nanoporous gold is fabricated by traditional microfabrication methods, and thus can be directly adopted by the current state-of-the-art neural electrode fabrication processes. All these properties make thin film nanoporous gold a promising candidate for use in neural electrode surfaces. This dissertation seeks to characterize both the morphological and the electrical response of neural cells to thin film nanoporous gold morphologies using an in vitro electrode morphology screening platform. The specific aims for this proposal are to: (i) develop a electrode morphology library that displays varying topographies to study structure-property relationships of thin film nanoporous gold and cellular response, (ii) characterize neural cell response to identified nanoporous gold topographies that reduce adverse tissue response in vitro, and (iii) develop an electrophysiology platform to characterize neural coupling to each identified nanoporous gold topography.

Structure-property relationships in the optimization of polysilicon thin films for electrical recording/stimulation of single neurons.

PubMed

Saha, Rajarshi; Muthuswamy, Jit

2007-06-01

We had earlier demonstrated the use of polysilicon microelectrodes for recording electrical activity from single neurons in vivo. Good machinability and compatibility with CMOS processing further make polysilicon an attractive interface material between biological environments on one hand and MEMS technology and digital circuits on the other hand. In this study, we focus on optimizing the polysilicon thin films for (a) electrical recording and (b) stimulation of single neurons by minimizing its electrochemical impedance spectra and maximizing its charge storage/injection capacity respectively. The structure-property relationships in ion-implanted (phosphorus) LPCVD polysilicon thin films under different annealing and doping conditions were carefully assessed during this optimization process. A 2D model of the polysilicon thin film consisting of 4 grains and 3 grain boundaries was constructed and the effect of grain size and grain boundaries on dc resistivity was simulated using device simulator ATLAS. Optimal processing conditions and doping concentrations resulted in a 10-fold decrease in electrochemical impedance from 1.1 kOmega to 0.1 kOmega at 1 kHz (area of polysilicon interface = 4.8 mm(2)). Subsequent characterizations showed that evolution of secondary grains within the polysilicon thin films at optimal doping and annealing conditions (10(21)/cm(3) of phosphorus and annealed at 1200 degrees C) was responsible for decreasing the impedance. Cyclic voltammetry studies demonstrated that charge storage properties of low doped (10(15)/cm(3)) thin films was 111.4 microC/cm(2) in phosphate buffered saline which compares well with platinum wires (approximately 50 microC/cm(2)) and the double-layered capacitance (C(dl)) could be sustained between -1 to 1 V before breakdown and hydrolysis. We conclude that polysilicon can be optimized for recording and stimulating single neurons and can be a valuable interface material between neurons and CMOS or MEMS devices.

Enhancement of superconducting transition temperature in FeSe electric-double-layer transistor with multivalent ionic liquids

NASA Astrophysics Data System (ADS)

Miyakawa, Tomoki; Shiogai, Junichi; Shimizu, Sunao; Matsumoto, Michio; Ito, Yukihiro; Harada, Takayuki; Fujiwara, Kohei; Nojima, Tsutomu; Itoh, Yoshimitsu; Aida, Takuzo; Iwasa, Yoshihiro; Tsukazaki, Atsushi

2018-03-01

We report on an enhancement of the superconducting transition temperature (Tc) of the FeSe-based electric-double-layer transistor (FeSe-EDLT) by applying the multivalent oligomeric ionic liquids (ILs). The IL composed of dimeric cation (divalent IL) enables a large amount of charge accumulation on the surface of the FeSe ultrathin film, resulting in inducing electron-rich conduction even in a rather thick 10 nm FeSe channel. The onset Tc in FeSe-EDLT with the divalent IL is enhanced to be approaching about 50 K at the thin limit, which is about 7 K higher than that in EDLT with conventional monovalent ILs. The enhancement of Tc is a pronounced effect of the application of the divalent IL, in addition to the large capacitance, supposing preferable interface formation of ILs driven by geometric and/or Coulombic effect. The present finding strongly indicates that multivalent ILs are powerful tools for controlling and improving physical properties of materials.

Paradigm transition in cosmic plasma physics

NASA Technical Reports Server (NTRS)

Alfven, H.

1982-01-01

New discoveries in cosmic plasma physics are described, and their applications to solar, interstellar, galactic, and cosmological problems are discussed. The new discoveries include the existence of double layers in magnetized plasmas and in the low magnetosphere, and energy transfer by electric current in the auroral circuit. It is argued that solar flares and the solar wind-magnetosphere interaction should not be interpreted in terms of magnetic merging theories, and that electric current needs to be explicitly taken account of in understanding these phenomena. The filamentary structure of cosmic plasmas may be caused by electric currents in space, and the pinch effect may have a central role to play in the evolutionary history of interstellar clouds, stars, and solar systems. Space may have a cellular structure, with the cell walls formed by thin electric current layers. Annihilation may be the source of energy for quasars and the Hubble expansion, and the big bang cosmology may well be wrong.

Start-up of electrophoresis of an arbitrarily oriented dielectric cylinder.

PubMed

Chen, Guan Y; Keh, Huan J

2014-09-01

An analytical study is presented for the transient electrophoretic response of a circular cylindrical particle to the step application of an electric field. The electric double layer adjacent to the particle surface is thin but finite compared with the radius of the particle. The time-evolving electroosmotic velocity at the outer boundary of the double layer is utilized as a slip condition so that the transient momentum conservation equation for the bulk fluid flow is solved. Explicit formulas for the unsteady electrophoretic velocity of the particle are obtained for both axially and transversely applied electric fields, and can be linearly superimposed for an arbitrarily-oriented applied field. If the cylindrical particle is neutrally buoyant in the suspending fluid, the transient electrophoretic velocity is independent of the orientation of the particle relative to the applied electric field and will be in the direction of the applied field. If the particle is different in density from the fluid, then the direction of electrophoresis will not coincide with that of the applied field until the steady state is attained. The growth of the electrophoretic mobility with the elapsed time for a cylindrical particle is substantially slower than for a spherical particle. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Proximity effect assisted absorption enhancement in thin film with locally clustered nanoholes.

PubMed

Wu, Shaolong; Zhang, Cheng; Li, Xiaofeng; Zhan, Yaohui

2015-03-01

We focus on the light-trapping characteristics of a thin film with locally clustered nanoholes (NHs), considering that the clustering effect is usually encountered in preparing the nanostructures. Our full-wave finite-element simulation indicates that an intentionally introduced clustering effect could be employed for improving the light-trapping performance of the nanostructured thin film. For a 100 nm thick amorphous silicon film, an optimal clustering design with NH diameter of 100 nm is able to double the integrated optical absorption over the solar spectrum, compared to the planar counterpart, as well as show much improved optical performance over that of the nonclustered setup. A further insight into the underlying physics explains the outstanding light-trapping capability in terms of the increased available modes, a stronger power coupling efficiency, a higher fraction of electric field concentrated in absorbable material, and a higher density of photon states.

Comparative study of absorption in tilted silicon nanowire arrays for photovoltaics

PubMed Central

2014-01-01

Silicon nanowire arrays have been shown to demonstrate light trapping properties and promising potential for next-generation photovoltaics. In this paper, we show that the absorption enhancement in vertical nanowire arrays on a perfectly electric conductor can be further improved through tilting. Vertical nanowire arrays have a 66.2% improvement in ultimate efficiency over an ideal double-pass thin film of the equivalent amount of material. Tilted nanowire arrays, with the same amount of material, exhibit improved performance over vertical nanowire arrays across a broad range of tilt angles (from 38° to 72°). The optimum tilt of 53° has an improvement of 8.6% over that of vertical nanowire arrays and 80.4% over that of the ideal double-pass thin film. Tilted nanowire arrays exhibit improved absorption over the solar spectrum compared with vertical nanowires since the tilt allows for the excitation of additional modes besides the HE 1m modes that are excited at normal incidence. We also observed that tilted nanowire arrays have improved performance over vertical nanowire arrays for a large range of incidence angles (under about 60°). PMID:25435833

Comparative study of absorption in tilted silicon nanowire arrays for photovoltaics.

PubMed

Kayes, Md Imrul; Leu, Paul W

2014-01-01

Silicon nanowire arrays have been shown to demonstrate light trapping properties and promising potential for next-generation photovoltaics. In this paper, we show that the absorption enhancement in vertical nanowire arrays on a perfectly electric conductor can be further improved through tilting. Vertical nanowire arrays have a 66.2% improvement in ultimate efficiency over an ideal double-pass thin film of the equivalent amount of material. Tilted nanowire arrays, with the same amount of material, exhibit improved performance over vertical nanowire arrays across a broad range of tilt angles (from 38° to 72°). The optimum tilt of 53° has an improvement of 8.6% over that of vertical nanowire arrays and 80.4% over that of the ideal double-pass thin film. Tilted nanowire arrays exhibit improved absorption over the solar spectrum compared with vertical nanowires since the tilt allows for the excitation of additional modes besides the HE 1m modes that are excited at normal incidence. We also observed that tilted nanowire arrays have improved performance over vertical nanowire arrays for a large range of incidence angles (under about 60°).

Highly Conductive Transparent and Flexible Electrodes Including Double-Stacked Thin Metal Films for Transparent Flexible Electronics.

PubMed

Han, Jun Hee; Kim, Do-Hong; Jeong, Eun Gyo; Lee, Tae-Woo; Lee, Myung Keun; Park, Jeong Woo; Lee, Hoseung; Choi, Kyung Cheol

2017-05-17

To keep pace with the era of transparent and deformable electronics, electrode functions should be improved. In this paper, an innovative structure is suggested to overcome the trade-off between optical and electrical properties that commonly arises with transparent electrodes. The structure of double-stacked metal films showed high conductivity (<3 Ω/sq) and high transparency (∼90%) simultaneously. A proper space between two metal films led to high transmittance by an optical phenomenon. The principle of parallel connection allowed the electrode to have high conductivity. In situ fabrication was possible because the only materials composing the electrode were silver and WO 3 , which can be deposited by thermal evaporation. The electrode was flexible enough to withstand 10 000 bending cycles with a 1 mm bending radius. Furthermore, a few μm scale patterning of the electrode was easily implemented by using photolithography, which is widely employed industrially for patterning. Flexible organic light-emitting diodes and a transparent flexible thin-film transistor were successfully fabricated with the proposed electrode. Various practical applications of this electrode to new transparent flexible electronics are expected.

On the Impact of Electrostatic Correlations on the Double-Layer Polarization of a Spherical Particle in an Alternating Current Field.

PubMed

Alidoosti, Elaheh; Zhao, Hui

2018-05-15

At concentrated electrolytes, the ion-ion electrostatic correlation effect is considered an important factor in electrokinetics. In this paper, we compute, in theory and simulation, the dipole moment for a spherical particle (charged, dielectric) under the action of an alternating electric field using the modified continuum Poisson-Nernst-Planck (PNP) model by Bazant et al. [ Double Layer in Ionic Liquids: Overscreening Versus Crowding . Phys. Rev. Lett. 2011 , 106 , 046102 ] We investigate the dependency of the dipole moment in terms of frequency and its variation with such quantities like ζ-potential, electrostatic correlation length, and double-layer thickness. With thin electric double layers, we develop simple models through performing an asymptotic analysis of the modified PNP model. We also present numerical results for an arbitrary Debye screening length and electrostatic correlation length. From the results, we find a complicated impact of electrostatic correlations on the dipole moment. For instance, with increasing the electrostatic correlation length, the dipole moment decreases and reaches a minimum and then it goes up. This is because of initially decreasing of surface conduction and finally increasing due to the impact of ion-ion electrostatic correlations on ion's convection and migration. Also, we show that in contrast to the standard PNP model, the modified PNP model can qualitatively explain the data from the experimental results in multivalent electrolytes.

Epitaxial Bi2 FeCrO6 Multiferroic Thin Film as a New Visible Light Absorbing Photocathode Material.

PubMed

Li, Shun; AlOtaibi, Bandar; Huang, Wei; Mi, Zetian; Serpone, Nick; Nechache, Riad; Rosei, Federico

2015-08-26

Ferroelectric materials have been studied increasingly for solar energy conversion technologies due to the efficient charge separation driven by the polarization induced internal electric field. However, their insufficient conversion efficiency is still a major challenge. Here, a photocathode material of epitaxial double perovskite Bi(2) FeCrO(6) multiferroic thin film is reported with a suitable conduction band position and small bandgap (1.9-2.1 eV), for visible-light-driven reduction of water to hydrogen. Photoelectrochemical measurements show that the highest photocurrent density up to -1.02 mA cm(-2) at a potential of -0.97 V versus reversible hydrogen electrode is obtained in p-type Bi(2) FeCrO(6) thin film photocathode grown on SrTiO(3) substrate under AM 1.5G simulated sunlight. In addition, a twofold enhancement of photocurrent density is obtained after negatively poling the Bi(2) FeCrO(6) thin film, as a result of modulation of the band structure by suitable control of the internal electric field gradient originating from the ferroelectric polarization in the Bi(2) FeCrO(6) films. The findings validate the use of multiferroic Bi(2) FeCrO(6) thin films as photocathode materials, and also prove that the manipulation of internal fields through polarization in ferroelectric materials is a promising strategy for the design of improved photoelectrodes and smart devices for solar energy conversion. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nonequilibrium electrophoresis of an ion-selective microgranule for weak and moderate external electric fields

NASA Astrophysics Data System (ADS)

Frants, E. A.; Ganchenko, G. S.; Shelistov, V. S.; Amiroudine, S.; Demekhin, E. A.

2018-02-01

Electrokinetics and the movement of charge-selective micro-granules in an electrolyte solution under the influence of an external electric field are investigated theoretically. Straightforward perturbation analysis is applied to a thin electric double layer and a weak external field, while a numerical solution is used for moderate electric fields. The asymptotic solution enables the determination of the salt concentration, electric charge distribution, and electro-osmotic velocity fields. It may also be used to obtain a simple analytical formula for the electrophoretic velocity in the case of quasi-equilibrium electrophoresis (electrophoresis of the first kind). This formula differs from the famous Helmholtz-Smoluchowski relation, which applies to dielectric microparticles, but not to ion-selective granules. Numerical calculations are used to validate the derived formula for weak external electric fields, but for moderate fields, nonlinear effects lead to a significant increase in electrophoretic mobility and to a transition from quasi-equilibrium electrophoresis of the first kind to nonequilibrium electrophoresis of the second kind. Theoretical results are successfully compared with experimental data.

Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices.

PubMed

Black, Jennifer M; Come, Jeremy; Bi, Sheng; Zhu, Mengyang; Zhao, Wei; Wong, Anthony T; Noh, Joo Hyon; Pudasaini, Pushpa R; Zhang, Pengfei; Okatan, Mahmut Baris; Dai, Sheng; Kalinin, Sergei V; Rack, Philip D; Ward, Thomas Zac; Feng, Guang; Balke, Nina

2017-11-22

Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal-insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment and theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.

Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices

DOE PAGES

Black, Jennifer M.; Come, Jeremy; Bi, Sheng; ...

2017-10-24

Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal–insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment andmore » theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.« less

Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, Jennifer M.; Come, Jeremy; Bi, Sheng

Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal–insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment andmore » theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.« less

Solution-processed zinc oxide nanoparticles/single-walled carbon nanotubes hybrid thin-film transistors

NASA Astrophysics Data System (ADS)

Liu, Fangmei; Sun, Jia; Qian, Chuan; Hu, Xiaotao; Wu, Han; Huang, Yulan; Yang, Junliang

2016-09-01

Solution-processed thin-film transistors (TFTs) are the essential building blocks for manufacturing the low-cost and large-area consumptive electronics. Herein, solution-processed TFTs based on the composites of zinc oxide (ZnO) nanoparticles and single-walled carbon nanotubes (SWCNTs) were fabricated by the methods of spin-coating and doctor-blading. Through controlling the weight of SWCNTs, the ZnO/SWCNTs TFTs fabricated by spin-coating demonstrated a field-effect mobility of 4.7 cm2/Vs and a low threshold voltage of 0.8 V, while the TFTs devices fabricated by doctor-blading technique showed reasonable electrical performance with a mobility of 0.22 cm2/Vs. Furthermore, the ion-gel was used as an efficient electrochemical gate dielectric because of its large electric double-layer capacitance. The operating voltage of all the TFTs devices is as low as 4.0 V. The research suggests that ZnO/SWCNTs TFTs have the potential applications in low-cost, large-area and flexible consumptive electronics, such as chemical-biological sensors and smart label.

Multi-band reflector antenna with double-ring element frequency selective subreflector

NASA Technical Reports Server (NTRS)

Wu, Te-Kao; Lee, S. W.

1993-01-01

Frequency selective subreflectors (FSS) are often employed in the reflector antenna system of a communication satellite or a deep space exploration vehicle for multi-frequency operations. In the past, FSS's have been designed for diplexing two frequency bands. For example, the Voyager FSS was designed to diplex S and X bands and the TDRSS FSS was designed to diplex S and Ku bands. Recently, NASA's CASSINI project requires an FSS to multiplex four frequency (S/X/Ku/Ka) bands. Theoretical analysis and experimental verifications are presented for a multi-band flat pannel FSS with double-ring elements. Both the exact formulation and the thin-ring approximation are described for analyzing and designing this multi-ring patch element FSS. It is found that the thin-ring approximation fails to predict the electrically wide ring element FSS's performance. A single screen double-ring element FSS is demonstrated for the tri-band system that reflects the X-band signal while transmitting through the S- and Ku-band signals. In addition, a double screen FSS with non-similar double-ring elements is presented for the Cassini's four-band system which reflects the X- and Ka-band signals while passing the S- and Ku-band signals. To accurately predict the FSS effects on a dual reflector antenna's radiation pattern, the FSS subreflector's transmitted/reflected field variation as functions of the polarization and incident angles with respect to the local coordinates was taken into account. An FSS transmission/reflection coefficient table is computed for TE and TM polarizations at various incident angles based on the planar FSS model. Next, the hybrid Geometric Optics (GO) and Physical Optics (PO) technique is implemented with linearly interpolating the FSS table to efficiently determine the FSS effects in a dual reflector antenna.

Effect of Grain Boundaries on the Performance of Thin-Film-Based Polycrystalline Silicon Solar Cells: A Numerical Modeling

NASA Astrophysics Data System (ADS)

Chhetri, Nikita; Chatterjee, Somenath

2018-01-01

Solar cells/photovoltaic, a renewable energy source, is appraised to be the most effective alternative to the conventional electrical energy generator. A cost-effective alternative of crystalline wafer-based solar cell is thin-film polycrystalline-based solar cell. This paper reports the numerical analysis of dependency of the solar cell parameters (i.e., efficiency, fill factor, open-circuit voltage and short-circuit current density) on grain size for thin-film-based polycrystalline silicon (Si) solar cells. A minority carrier lifetime model is proposed to do a correlation between the grains, grain boundaries and lifetime for thin-film-based polycrystalline Si solar cells in MATLAB environment. As observed, the increment in the grain size diameter results in increase in minority carrier lifetime in polycrystalline Si thin film. A non-equivalent series resistance double-diode model is used to find the dark as well as light (AM1.5) current-voltage (I-V) characteristics for thin-film-based polycrystalline Si solar cells. To optimize the effectiveness of the proposed model, a successive approximation method is used and the corresponding fitting parameters are obtained. The model is validated with the experimentally obtained results reported elsewhere. The experimentally reported solar cell parameters can be found using the proposed model described here.

Band gap grading and photovoltaic performance of solution-processed Cu(In,Ga)S2 thin-film solar cells.

PubMed

Sohn, So Hyeong; Han, Noh Soo; Park, Yong Jin; Park, Seung Min; An, Hee Sang; Kim, Dong-Wook; Min, Byoung Koun; Song, Jae Kyu

2014-12-28

The photophysical properties of CuInxGa1-xS2 (CIGS) thin films, prepared by solution-based coating methods, are investigated to understand the correlation between the optical properties of these films and the electrical characteristics of solar cells fabricated using these films. Photophysical properties, such as the depth-dependent band gap and carrier lifetime, turn out to be at play in determining the energy conversion efficiency of solar cells. A double grading of the band gap in CIGS films enhances solar cell efficiency, even when defect states disturb carrier collection by non-radiative decay. The combinational stacking of different density films leads to improved solar cell performance as well as efficient fabrication because a graded band gap and reduced shunt current increase carrier collection efficiency. The photodynamics of minority-carriers suggests that the suppression of defect states is a primary area of improvement in CIGS thin films prepared by solution-based methods.

Solid-State Thin-Film Supercapacitors with Ultrafast Charge/Discharge Based on N-Doped-Carbon-Tubes/Au-Nanoparticles-Doped-MnO2 Nanocomposites.

PubMed

Lv, Qiying; Wang, Shang; Sun, Hongyu; Luo, Jun; Xiao, Jian; Xiao, JunWu; Xiao, Fei; Wang, Shuai

2016-01-13

Although carbonaceous materials possess long cycle stability and high power density, their low-energy density greatly limits their applications. On the contrary, metal oxides are promising pseudocapacitive electrode materials for supercapacitors due to their high-energy density. Nevertheless, poor electrical conductivity of metal oxides constitutes a primary challenge that significantly limits their energy storage capacity. Here, an advanced integrated electrode for high-performance pseudocapacitors has been designed by growing N-doped-carbon-tubes/Au-nanoparticles-doped-MnO2 (NCTs/ANPDM) nanocomposite on carbon fabric. The excellent electrical conductivity and well-ordered tunnels of NCTs together with Au nanoparticles of the electrode cause low internal resistance, good ionic contact, and thus enhance redox reactions for high specific capacitance of pure MnO2 in aqueous electrolyte, even at high scan rates. A prototype solid-state thin-film symmetric supercapacitor (SSC) device based on NCTs/ANPDM exhibits large energy density (51 Wh/kg) and superior cycling performance (93% after 5000 cycles). In addition, the asymmetric supercapacitor (ASC) device assembled from NCTs/ANPDM and Fe2O3 nanorods demonstrates ultrafast charge/discharge (10 V/s), which is among the best reported for solid-state thin-film supercapacitors with both electrodes made of metal oxide electroactive materials. Moreover, its superior charge/discharge behavior is comparable to electrical double layer type supercapacitors. The ASC device also shows superior cycling performance (97% after 5000 cycles). The NCTs/ANPDM nanomaterial demonstrates great potential as a power source for energy storage devices.

Preparation and Characterization of Ferroelectric BaTi0.91(Hf0.5, Zr0.5)0.09O3 Thin Films by Sol-Gel Process Using Titanium and Zirconium Alkoxides

NASA Astrophysics Data System (ADS)

Thongrueng, Jirawat; Nishio, Keishi; Nagata, Kunihiro; Tsuchiya, Toshio

2000-09-01

Sol-gel-derived BaTi0.91(Hf0.5, Zr0.5)0.09O3 (BTHZ-9) thin films have been successfully prepared on Pt and Pt(111)/Ti/SiO2/Si(100) substrates by spin-coating and sintering from 550 to 900°C for 2 h in oxygen ambient. X-ray diffraction measurement indicated that the single perovskite phase of the BTHZ-9 thin films was obtained at heat treatment above 650°C. The formation temperature of the double-alkoxy-derived BTHZ-9 thin films was lower by at least 80°C than that of the films prepared from only titanium alkoxide. The microstructure of the films was observed by atomic force microscopy and scanning electron microscopy. The grain size of the films increased from 70 to 200 nm with increasing sintering temperature ranging from 650 to 850°C. The maximum peak for the dielectric constant, corresponding to the Curie point (87°C), was broad and lower in magnitude compared with that of the BTHZ-9 bulk ceramics. Tensile stresses resulting from the differences between thermal expansion coefficients of the substrate and the film caused poor electrical properties. BTHZ-9 thin films exhibited a well-saturated polarization-electric field hysteresis loop. The polarization and coercive field for the 850-nm-thick BTHZ-9 thin film prepared on Pt/Ti/SiO2/Si substrate at 750°C were determined to be 8 μC/cm2 and 15 kV/cm, respectively. Those of the BTHZ-9 thin film prepared on Pt substrate at 850°C were found to be 9 μC/cm2 and 18 kV/cm, respectively.

Front and backside processed thin film electronic devices

DOEpatents

Evans, Paul G [Madison, WI; Lagally, Max G [Madison, WI; Ma, Zhenqiang [Middleton, WI; Yuan, Hao-Chih [Lakewood, CO; Wang, Guogong [Madison, WI; Eriksson, Mark A [Madison, WI

2012-01-03

This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Detecting the Length of Double-stranded DNA with Solid State Nanopores

NASA Astrophysics Data System (ADS)

Li, Jiali; Gershow, Marc; Stein, Derek; Qun, Cai; Brandin, Eric; Wang, Hui; Huang, Albert; Branton, Dan; Golovchenko, Jene

2003-03-01

We report on the use of nanometer scale diameter, solid-state nanopores as single molecule detectors of double stranded DNA molecules. These solid-state nanopores are fabricated in thin membranes of silicon nitride, by ion beam sculpting 1. They produce discrete electronic signals: current blockages, when an electrically biased nanopore is exposed to DNA molecules in aqueous salt solutions. We demonstrate examples of such electronic signals for 3k base pairs (bp) and 10k bp double stranded DNA molecules, which suggest that these molecules are individually translocating through the nanopore during the detection process. The translocating time for the 10k bp double stranded DNA is about 3 times longer than the 3k bp, demonstrating that a solid-state nanopore device can be used to detect the lengths of double stranded DNA molecules. Similarities and differences with signals obtained from single stranded DNA in a biological nanopores are discussed 2. 1. Li, J., Stein, D., McMullan, C., Branton, D. Aziz, M. J. and Golovchenko, J. Ion Beam Sculpting at nanometer length scales. Nature 412, 166-169 (2001). 2. Meller, A., L. Nivon, E. Brandin, Golovchenko, J. & Branton, D. Proc. Natl. Acad. Sci. USA 97, 1079-1084 (2000).

On two-liquid AC electroosmotic system for thin films.

PubMed

Navarkar, Abhishek; Amiroudine, Sakir; Demekhin, Evgeny A

2016-03-01

Lab-on-chip devices employ EOF for transportation and mixing of liquids. However, when a steady (DC) electric field is applied to the liquids, there are undesirable effects such as degradation of sample, electrolysis, bubble formation, etc. due to large magnitude of electric potential required to generate the flow. These effects can be averted by using a time-periodic or AC electric field. Transport and mixing of nonconductive liquids remain a problem even with this technique. In the present study, a two-liquid system bounded by two rigid plates, which act as substrates, is considered. The potential distribution is derived by assuming a Boltzmann charge distribution and using the Debye-Hückel linearization. Analytical solution of this time-periodic system shows some effects of viscosity ratio and permittivity ratio on the velocity profile. Interfacial electrostatics is also found to play a significant role in deciding velocity gradients at the interface. High frequency of the applied electric field is observed to generate an approximately static velocity profile away from the Electric Double Layer (EDL). © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electroosmosis of viscoelastic fluids over charge modulated surfaces in narrow confinements

NASA Astrophysics Data System (ADS)

Ghosh, Uddipta; Chakraborty, Suman

2015-06-01

In the present work, we attempt to analyze the electroosmotic flow of a viscoelastic fluid, following quasi-linear constitutive behavior, over charge modulated surfaces in narrow confinements. We obtain analytical solutions for the flow field for thin electrical double layer (EDL) limit through asymptotic analysis for small Deborah numbers. We show that a combination of matched and regular asymptotic expansion is needed for the thin EDL limit. We subsequently determine the modified Smoluchowski slip velocity for viscoelastic fluids and show that the quasi-linear nature of the constitutive behavior adds to the periodicity of the flow. We also obtain the net throughput in the channel and demonstrate its relative decrement as compared to that of a Newtonian fluid. Our results may have potential implications towards augmenting microfluidic mixing by exploiting electrokinetic transport of viscoelastic fluids over charge modulated surfaces.

Depositing bulk or micro-scale electrodes

DOEpatents

Shah, Kedar G.; Pannu, Satinderpall S.; Tolosa, Vanessa; Tooker, Angela C.; Sheth, Heeral J.; Felix, Sarah H.; Delima, Terri L.

2016-11-01

Thicker electrodes are provided on microelectronic device using thermo-compression bonding. A thin-film electrical conducting layer forms electrical conduits and bulk depositing provides an electrode layer on the thin-film electrical conducting layer. An insulating polymer layer encapsulates the electrically thin-film electrical conducting layer and the electrode layer. Some of the insulating layer is removed to expose the electrode layer.

Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm

NASA Astrophysics Data System (ADS)

Onuma, Takeyoshi; Chichibu, Shigefusa F.; Aoyama, Toyomi; Nakajima, Kiyomi; Ahmet, Parhat; Azuhata, Takashi; Chikyow, Toyohiro; Sota, Takayuki; Nagahama, Shin-ichi; Mukai, Takashi

2003-12-01

Optical and structural properties of an InGaN double-quantum-well (DQW) laser diode (LD) wafer that lased at 450 nm were investigated to discuss an enormous impact of a polarization-induced electric field on the recombination dynamics in InGaN quantum structures. The quantum-well (QW) structure was shown to have the well thickness as thin as approximately 1 nm and InN molar fraction x of approximately 14%. The gross effective electric field in the QW (FQW) was estimated to be 490 kV/cm from the Franz-Keldysh oscillation (FKO) period in the electroreflectance (ER) spectrum, implying that an internal piezoelectric field (Fpiz) of approximately 1.4 MV/cm was cancelled by the pn junction built-in field (Fbi) and Coulomb screening due to carriers in the DQW. The magnitude of FQW can be further weakened by applying reverse bias (VR) on the junction; the decrease in the photoluminescence (PL) lifetime at low temperature measured under VR was explained to be due to a recovery of electron-hole wavefunction overlap for small VR (|VR|<4 V), and due mainly to the tunneling escape of carriers through the barriers for larger VR. By applying an appropriate VR smaller than 4 V, electron-hole wavefunction overlap, which had been separated vertically along the c-axis due to quantum-confined Stark effect, could be partially recovered, and then the time-resolved PL signals exhibited a less-pronounced stretched exponential decay, giving a scaling parameter (β) of 0.85 and effective in-plane localization depth (E0) of 40-50 meV for the spontaneous emission. These values were closer to those of much homogeneous QWs compared to those reported previously for InGaN QWs having similar InN molar fractions. The use of very thin QWs is considered to bring easier Coulomb screening of FQW and population inversion under high excitation conditions.

Experimental Study of Acid Treatment Toward Characterization of Structural, Optical, and Morphological Properties of TiO2-SnO2 Composite Thin Film

NASA Astrophysics Data System (ADS)

Fajar, M. N.; Hidayat, R.; Triwikantoro; Endarko

2018-04-01

The TiO2-SnO2 thin film with single and double-layer structure has successfully synthesized on FTO (Fluorine-doped Tin Oxide) substrate using the screen printing technique. The structural, optical, and morphological properties of the film were investigated by XRD, UV-Vis, and SEM, respectively. The results showed that the single and double-layer structure of TiO2-SnO2 thin film has mixed phase with a strong formation of casseritte phase. The acid treatment effect on TiO2-SnO2 thin film decreases the peak intensity of anatase phase formation and thin film’s absorbance values. The morphological study is also revealed that the single layer TiO2-SnO2 thin film had a more porous nature and decreased particle size distribution after acid treatment, while the double-layer TiO2-SnO2 thin film Eroded due to acid treatment.

Method for double-sided processing of thin film transistors

DOEpatents

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2008-04-08

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Self-organized layered hydrogenation in black Mg2NiHx switchable mirrors.

PubMed

Lohstroh, W; Westerwaal, R J; Noheda, B; Enache, S; Giebels, I A M E; Dam, B; Griessen, R

2004-11-05

In addition to a mirrorlike (Mg2Ni) and a transparent (Mg2NiH4) state, thin films of Mg2NiHx exhibit a remarkable black state with low reflection over the entire visible spectrum, essentially zero transmission and a low electrical resistivity. Such a black state is not explicable for a homogeneous layer since a large absorption coefficient always yields substantial reflection. We show that it results from a self-organized and reversible double layering of metallic Mg2NiH0.3 and semiconducting Mg2NiH4.

Low-temperature sol-gel oxide TFT with a fluoropolymer dielectric to enhance the effective mobility at low operation voltage

NASA Astrophysics Data System (ADS)

Yu, Shang-Yu; Wang, Kuan-Hsun; Zan, Hsiao-Wen; Soppera, Olivier

2017-06-01

In this article, we propose a solution-processed high-performance amorphous indium-zinc oxide (a-IZO) thin-film transistor (TFT) gated with a fluoropolymer dielectric. Compared with a conventional IZO TFT with a silicon nitride dielectric, a fluoropolymer dielectric effectively reduces the operation voltage to less than 3 V and greatly increases the effective mobility 40-fold. We suggest that the dipole layer formed at the dielectric surface facilitates electron accumulation and induces the electric double-layer effect. The dipole-induced hysteresis effect is also investigated.

Sub-Grid Modeling of Electrokinetic Effects in Micro Flows

NASA Technical Reports Server (NTRS)

Chen, C. P.

2005-01-01

Advances in micro-fabrication processes have generated tremendous interests in miniaturizing chemical and biomedical analyses into integrated microsystems (Lab-on-Chip devices). To successfully design and operate the micro fluidics system, it is essential to understand the fundamental fluid flow phenomena when channel sizes are shrink to micron or even nano dimensions. One important phenomenon is the electro kinetic effect in micro/nano channels due to the existence of the electrical double layer (EDL) near a solid-liquid interface. Not only EDL is responsible for electro-osmosis pumping when an electric field parallel to the surface is imposed, EDL also causes extra flow resistance (the electro-viscous effect) and flow anomaly (such as early transition from laminar to turbulent flow) observed in pressure-driven microchannel flows. Modeling and simulation of electro-kinetic effects on micro flows poses significant numerical challenge due to the fact that the sizes of the double layer (10 nm up to microns) are very thin compared to channel width (can be up to 100 s of m). Since the typical thickness of the double layer is extremely small compared to the channel width, it would be computationally very costly to capture the velocity profile inside the double layer by placing sufficient number of grid cells in the layer to resolve the velocity changes, especially in complex, 3-d geometries. Existing approaches using "slip" wall velocity and augmented double layer are difficult to use when the flow geometry is complicated, e.g. flow in a T-junction, X-junction, etc. In order to overcome the difficulties arising from those two approaches, we have developed a sub-grid integration method to properly account for the physics of the double layer. The integration approach can be used on simple or complicated flow geometries. Resolution of the double layer is not needed in this approach, and the effects of the double layer can be accounted for at the same time. With this approach, the numeric grid size can be much larger than the thickness of double layer. Presented in this report are a description of the approach, methodology for implementation and several validation simulations for micro flows.

Preparation and unique electrical behaviors of monodispersed hybrid nanorattles of metal nanocores with hairy electroactive polymer shells.

PubMed

Cai, Tao; Zhang, Bin; Chen, Yu; Wang, Cheng; Zhu, Chun Xiang; Neoh, Koon-Gee; Kang, En-Tang

2014-03-03

A versatile template-assisted strategy for the preparation of monodispersed rattle-type hybrid nanospheres, encapsulating a movable Au nanocore in the hollow cavity of a hairy electroactive polymer shell (Au@air@PTEMA-g-P3HT hybrid nanorattles; PTEMA: poly(2-(thiophen-3-yl)ethyl methacrylate; P3HT: poly(3-hexylthiophene), was reported. The Au@silica core-shell nanoparticles, prepared by the modified Stöber sol-gel process on Au nanoparticle seeds, were used as templates for the synthesis of Au@silica@PTEMA core-double shell nanospheres. Subsequent oxidative graft polymerization of 3-hexylthiophene from the exterior surface of the Au@silica@PTEMA core-double shell nanospheres allowed the tailoring of surface functionality with electroactive P3HT brushes (Au@silica@PTEMA-g-P3HT nanospheres). The Au@air@ PTEMA-g-P3HT hybrid nanorattles were obtained after etching of the silica interlayer by HF. The as-prepared nanorattles were dispersed into an electrically insulating polystyrene matrix and for the first time used to fabricate nonvolatile memory devices. As a result, unique electrical behaviors, including insulator behavior, write-once-read-many-times and rewritable memory effects, and conductor behavior as well, were observed in the Al/Au@air@PTEMA-g-P3HT+PS/ITO (ITO: indium-tin oxide) sandwich thin-film devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transparent and flexible electrodes and supercapacitors using polyaniline/single-walled carbon nanotube composite thin films

NASA Astrophysics Data System (ADS)

Ge, Jun; Cheng, Guanghui; Chen, Liwei

2011-08-01

Large-scale transparent and flexible electronic devices have been pursued for potential applications such as those in touch sensors and display technologies. These applications require that the power source of these devices must also comply with transparent and flexible features. Here we present transparent and flexible supercapacitors assembled from polyaniline (PANI)/single-walled carbon nanotube (SWNT) composite thin film electrodes. The ultrathin, optically homogeneous and transparent, electrically conducting films of the PANI/SWNT composite show a large specific capacitance due to combined double-layer capacitance and pseudo-capacitance mechanisms. A supercapacitor assembled using electrodes with a SWNT density of 10.0 µg cm-2 and 59 wt% PANI gives a specific capacitance of 55.0 F g-1 at a current density of 2.6 A g-1, showing its possibility for transparent and flexible energy storage.

Transparent and flexible electrodes and supercapacitors using polyaniline/single-walled carbon nanotube composite thin films.

PubMed

Ge, Jun; Cheng, Guanghui; Chen, Liwei

2011-08-01

Large-scale transparent and flexible electronic devices have been pursued for potential applications such as those in touch sensors and display technologies. These applications require that the power source of these devices must also comply with transparent and flexible features. Here we present transparent and flexible supercapacitors assembled from polyaniline (PANI)/single-walled carbon nanotube (SWNT) composite thin film electrodes. The ultrathin, optically homogeneous and transparent, electrically conducting films of the PANI/SWNT composite show a large specific capacitance due to combined double-layer capacitance and pseudo-capacitance mechanisms. A supercapacitor assembled using electrodes with a SWNT density of 10.0 µg cm(-2) and 59 wt% PANI gives a specific capacitance of 55.0 F g(-1) at a current density of 2.6 A g(-1), showing its possibility for transparent and flexible energy storage. This journal is © The Royal Society of Chemistry 2011

Nanoplasmonic sensing of metal-halide complex formation and the electric double layer capacitor.

PubMed

Dahlin, Andreas B; Zahn, Raphael; Vörös, Janos

2012-04-07

Many nanotechnological devices are based on implementing electrochemistry with plasmonic nanostructures, but these systems are challenging to understand. We present a detailed study of the influence of electrochemical potentials on plasmon resonances, in the absence of surface coatings and redox active molecules, by synchronized voltammetry and spectroscopy. The experiments are performed on gold nanodisks and nanohole arrays in thin gold films, which are fabricated by improved methods. New insights are provided by high resolution spectroscopy and variable scan rates. Furthermore, we introduce new analytical models in order to understand the spectral changes quantitatively. In contrast to most previous literature, we find that the plasmonic signal is caused almost entirely by the formation of ionic complexes on the metal surface, most likely gold chloride in this study. The refractometric sensing effect from the ions in the electric double layer can be fully neglected, and the charging of the metal gives a surprisingly small effect for these systems. Our conclusions are consistent for both localized nanoparticle plasmons and propagating surface plasmons. We consider the results in this work especially important in the context of combined electrochemical and optical sensors. This journal is © The Royal Society of Chemistry 2012

Tunable inversion symmetry to control indirect-to-direct band gaps transitions

NASA Astrophysics Data System (ADS)

Lu, Xue-Zeng; Rondinelli, James M.

2018-05-01

Electric-field tunable indirect-to-direct band gap transitions occur in thin-film silicon and transition metal dichalcogenides; however, they remain challenging to access in three-dimensional transition metal oxides. Very recently, an unusual polar-to-nonpolar phase transition under epitaxial strain was discovered in A3B2O7 hybrid improper ferroelectrics (HIFs), which supports controllable dielectric anisotropy and magnetization. Here we examine HIF (ABO3) 1/(A'BO3) 1 superlattices and AA'BB' O6 double perovskites and predict a competing nonpolar antiferroelectric phase, demonstrating it is hidden in hybrid improper ferroelectrics exhibiting corner-connected B O6 octahedra. Furthermore, we show the transition between the polar and nonpolar phases enables an in-plane electric field to control the indirect-to-direct band gap transition at the phase boundary in the (ABO3) 1/(A'BO3) 1 superlattices and AA'BB' O6 double perovskites, which may be tuned through static strain or chemical substitution. Our findings establish HIFs as a functional electronics class from which to realize direct gap materials and enables the integration of a broader palette of chemistries and compounds for linear and nonlinear optical applications.

Influence of the solid dielectric over the electric field from the ozone cell gap with double dielectric barrier

NASA Astrophysics Data System (ADS)

Ganea, I.

2017-05-01

The distilled water has the advantage of high value dielectric constant (ε = 81) in relation to ceramic glass materials, currently used for constructing the dielectric barrier. It was necessary to build a thin-walled enclosure of solid insulating material that contain distilled water to achieve a dielectric barrier. This was necessary to avoid exposing the liquid to the direct action of ozone. Dielectric permittivity of the solid dielectric material and the thickness of these walls have diminished the value of the electric field form the gaseous gap of the ozone cell compared to the case with the dielectric barrier from distilled water. The author of this work deduced theoretical relationships that express the values of the electric field intensity in the gap of the cell with two dielectrics and compared them with similar relationships of the intensity of the electric field from the gap of the ozone cell with one dielectric. In this work the author presenting experimental results which confirm the theoretical deducting regarding the use of the solid dielectric as enclosure for the liquid dielectric.

Semiconductor sensor for optically measuring polarization rotation of optical wavefronts using rare earth iron garnets

DOEpatents

Duncan, Paul G.

2002-01-01

Described are the design of a rare earth iron garnet sensor element, optical methods of interrogating the sensor element, methods of coupling the optical sensor element to a waveguide, and an optical and electrical processing system for monitoring the polarization rotation of a linearly polarized wavefront undergoing external modulation due to magnetic field or electrical current fluctuation. The sensor element uses the Faraday effect, an intrinsic property of certain rare-earth iron garnet materials, to rotate the polarization state of light in the presence of a magnetic field. The sensor element may be coated with a thin-film mirror to effectively double the optical path length, providing twice the sensitivity for a given field strength or temperature change. A semiconductor sensor system using a rare earth iron garnet sensor element is described.

A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

NASA Astrophysics Data System (ADS)

Kim, Hunho; Kwack, Young-Jin; Yun, Eui-Jung; Choi, Woon-Seop

2016-09-01

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm2/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 105, and a subthreshold slope of 0.10 V/dec.

A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

PubMed Central

Kim, Hunho; Kwack, Young-Jin; Yun, Eui-Jung; Choi, Woon-Seop

2016-01-01

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm2/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 105, and a subthreshold slope of 0.10 V/dec. PMID:27641430

Simulations of induced-charge electro-osmosis in microfluidic devices

NASA Astrophysics Data System (ADS)

Ben, Yuxing

2005-03-01

Theories of nonlinear electrokinetic phenomena generally assume a uniform, neutral bulk electroylte in contact with a polarizable thin double layer near a metal or dielectric surface, which acts as a "capacitor skin". Induced-charge electro-osmosis (ICEO) is the general effect of nonlinear electro-osmotic slip, when an applied electric field acts on its own induced (diffuse) double-layer charge. In most theoretical and experimental work, ICEO has been studied in very simple geometries, such as colloidal spheres and planar, periodic micro-electrode arrays. Here we use finite-element simulations to predict how more complicated geometries of polarizable surfaces and/or electrodes yield flow profiles with subtle dependence on the amplitude and frequency of the applied voltage. We also consider how the simple model equations break down, due to surface conduction, bulk diffusion, and concentration polarization, for large applied voltages (as in most experiments).

Double Layers in Astrophysics

NASA Technical Reports Server (NTRS)

Williams, Alton C. (Editor); Moorehead, Tauna W. (Editor)

1987-01-01

Topics addressed include: laboratory double layers; ion-acoustic double layers; pumping potential wells; ion phase-space vortices; weak double layers; electric fields and double layers in plasmas; auroral double layers; double layer formation in a plasma; beamed emission from gamma-ray burst source; double layers and extragalactic jets; and electric potential between plasma sheet clouds.

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (<400sp°C). The double dilution was achieved by using a Ar (He) carrier for silane and its subsequent dilution by Hsb2. Structural and electrical properties of the films have been investigated over a wide growth space (temperature, power, pressure and dilution). Amorphous Si films deposited by silane diluted in He showed a compact nature and a hydrogen content of ˜8 at.% with a photo/dark conductivity ratio of 10sp4. Thin film transistors (W/L = 500/25) fabricated on these films, showed an on/off ratio of ˜10sp6 and a low threshold voltage of 2.92 volts. Microcrystalline Si films with a high crystalline content (˜80%) were also prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

The Role of Superthermal Electrons in the Formation of Double Layers and their Application in Space Plasmas

NASA Astrophysics Data System (ADS)

Singh, N.

2014-12-01

It is now widely recognized that superthermal electrons commonly exist with the thermal population in most space plasmas. When plasmas consisting of such electron population expand, double layers (DLs) naturally forma due to charge separation; the more mobile superthermal electrons march ahead of the thermal population, leaving a positive charge behind and generating electric fields. Under certain conditions such fields evolve into thin double layers or shocks. The double layers accelerate ions. Such double-layer formation was first invoked to explain expansion of laser produced plasmas. Since then it has been studied in laboratory experiments, and applied to (i) polar wind acceleration,(ii) the existence of low-altitude double layers in the auroral acceleration, (iii) a possible mechanism for the origination of the solar wind, (iv) the helicon double layer thrusters, and (v) the deceleration of electrons after their acceleration in solar flare events. The role of superthermal-electron driven double layers, also known as the low-altitude auroral double layers in the upward current region, in the upward acceleration of ionospheric ions is well-known. In the auroral application the upward moving superthermal electrons consist of backscattered downgoing primary energetic electrons as well as the secondary electrons. Similarly we suggest that such double layers might play roles in the acceleration of ions in the solar wind across the coronal transition region, where the superthermal electrons are supplied by magnetic reconnection events. We will present a unified theoretical view of the superthermal electron-driven double layers and their applications. We will summarize theoretical, experimental, simulation and observational results highlighting the common threads running through the various existing studies.

Effect of rapid thermal annealing on the structural and electrical properties of RF sputtered CCTO thin film

NASA Astrophysics Data System (ADS)

Tripathy, N.; Das, K. C.; Ghosh, S. P.; Bose, G.; Kar, J. P.

2017-02-01

CaCu3Ti4O12 (CCTO) thin films have been deposited by RF magnetron sputtering on silicon substrates at room temperature. As-deposited thin films were subjected to rapid thermal annealing (RTA) at different temperatures ranging from 850°C to 1000°C. XRD and capacitance - voltage studies indicate that the structural and electrical properties of CCTO thin film strongly depend upon the annealing temperature. XRD pattern of CCTO thin film annealed at 950°C revealed the polycrystalline nature with evolutions of microstructures. Electrical properties of the dielectric films were investigated by fabricating Al/CCTO/Si metal oxide semiconductor structure. Electrical properties were found to be deteriorated with increasing in annealing temperature.

Role of ion hydration for the differential capacitance of an electric double layer.

PubMed

Caetano, Daniel L Z; Bossa, Guilherme V; de Oliveira, Vinicius M; Brown, Matthew A; de Carvalho, Sidney J; May, Sylvio

2016-10-12

The influence of soft, hydration-mediated ion-ion and ion-surface interactions on the differential capacitance of an electric double layer is investigated using Monte Carlo simulations and compared to various mean-field models. We focus on a planar electrode surface at physiological concentration of monovalent ions in a uniform dielectric background. Hydration-mediated interactions are modeled on the basis of Yukawa potentials that add to the Coulomb and excluded volume interactions between ions. We present a mean-field model that includes hydration-mediated anion-anion, anion-cation, and cation-cation interactions of arbitrary strengths. In addition, finite ion sizes are accounted for through excluded volume interactions, described either on the basis of the Carnahan-Starling equation of state or using a lattice gas model. Both our Monte Carlo simulations and mean-field approaches predict a characteristic double-peak (the so-called camel shape) of the differential capacitance; its decrease reflects the packing of the counterions near the electrode surface. The presence of hydration-mediated ion-surface repulsion causes a thin charge-depleted region close to the surface, which is reminiscent of a Stern layer. We analyze the interplay between excluded volume and hydration-mediated interactions on the differential capacitance and demonstrate that for small surface charge density our mean-field model based on the Carnahan-Starling equation is able to capture the Monte Carlo simulation results. In contrast, for large surface charge density the mean-field approach based on the lattice gas model is preferable.

Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte

NASA Astrophysics Data System (ADS)

Guo, Junjie; Xie, Dingdong; Yang, Bingchu; Jiang, Jie

2018-06-01

Due to its mechanical flexibility, large bandgap and carrier mobility, atomically thin molybdenum disulphide (MoS2) has attracted widespread attention. However, it still lacks a facile route to fabricate a low-power high-performance logic gates/circuits before it gets the real application. Herein, we reported a facile and environment-friendly method to establish the low-power logic function in a single MoS2 field-effect transistor (FET) configuration gated with a polymer electrolyte. Such low-power and high-performance MoS2 FET can be implemented by using water-soluble polyvinyl alcohol (PVA) polymer as proton-conducting electric-double-layer (EDL) dielectric layer. It exhibited an ultra-low voltage (1.5 V) and a good performance with a high current on/off ratio (Ion/off) of 1 × 105, a large electron mobility (μ) of 47.5 cm2/V s, and a small subthreshold swing (S) of 0.26 V/dec, respectively. The inverter can be realized by using such a single MoS2 EDL FET with a gain of ∼4 at the operation voltage of only ∼1 V. Most importantly, the neuronal AND logic computing can be also demonstrated by using such a double-lateral-gate single MoS2 EDL transistor. These results show an effective step for future applications of 2D MoS2 FETs for integrated electronic engineering and low-energy environment-friendly green electronics.

Imaging the Dynamics of the Ferroelectric Stripe Phase Near a Field-Driven Phase Transition in Bismuth Ferrite

NASA Astrophysics Data System (ADS)

Laanait, Nouamane; Li, Qian; Zhang, Zhan; Kalinin, Sergei

Electric field-driven phase transitions in multiferroic systems such as Bismuth Ferrite could potentially host interesting domain dynamics due to the coexistence of multiple order parameters. Structural imaging of these dynamics under a host of elastic and electric boundary conditions is therefore of interest. Here, we present X-ray diffraction microscopy (XDM) studies of the domain wall dynamics in a bismuth ferrite thin-film near the field-driven transition from rhombohedral to monoclinic (R to M). XDM is a novel full-field imaging technique that uses Bragg diffraction contrast to image structural configurations with sub-100nm lateral resolutions and fast acquisition times (milliseconds to seconds per image). We find that under electric fields 100 kV/cm, a bismuth ferrite thin-film (100 nm BiFeO3/DyScO3 (110)) undergoes a structural phase transition but that this new phase (M) is pinned by the preexisting ferroelectric/ferroelastic stripe phase (R). At higher fields ( 300 kV/cm), we observe unusually slow domain wall dynamics in the stripe phase, consisting of periodicity doubling, domain wall roughening and crowding. These observed ferroelastic domain wall spatial dynamics are weakly constrained by the crystal symmetry of the orthorhombic substrate but exhibit nonlinear dynamics more commonly associated with disordered nematic systems. This work was supported by the Eugene P. Wigner Fellowship program at Oak Ridge National Laboratory, a U.S. Department of Energy facility.

Challenges facing lithium batteries and electrical double-layer capacitors.

PubMed

Choi, Nam-Soon; Chen, Zonghai; Freunberger, Stefan A; Ji, Xiulei; Sun, Yang-Kook; Amine, Khalil; Yushin, Gleb; Nazar, Linda F; Cho, Jaephil; Bruce, Peter G

2012-10-01

Energy-storage technologies, including electrical double-layer capacitors and rechargeable batteries, have attracted significant attention for applications in portable electronic devices, electric vehicles, bulk electricity storage at power stations, and "load leveling" of renewable sources, such as solar energy and wind power. Transforming lithium batteries and electric double-layer capacitors requires a step change in the science underpinning these devices, including the discovery of new materials, new electrochemistry, and an increased understanding of the processes on which the devices depend. The Review will consider some of the current scientific issues underpinning lithium batteries and electric double-layer capacitors. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nickel-Aluminum Layered Double Hydroxide Coating on the Surface of Conductive Substrates by Liquid Phase Deposition.

PubMed

Maki, Hideshi; Takigawa, Masashi; Mizuhata, Minoru

2015-08-12

The direct synthesis of the adhered Ni-Al LDH thin film onto the surface of electrically conductive substrates by the liquid phase deposition (LPD) reaction is carried out for the development of the positive electrode. The complexation and solution equilibria of the dissolved species in the LPD reaction have been clarified by a theoretical approach, and the LPD reaction conditions for the Ni-Al LDH depositions are shown to be optimized by controlling the fluoride ion concentration and the pH of the LPD reaction solutions. The yields of metal oxides and hydroxides by the LPD method are very sensitive to the supersaturation state of the hydroxide in the reaction solution. The surfaces of conductive substrates are completely covered by the minute mesh-like Ni-Al LDH thin film; furthermore, there is no gap between the surfaces of conductive substrates and the deposited Ni-Al LDH thin film. The active material layer thickness was able to be controlled within the range from 100 nm to 1 μm by the LPD reaction time. The high-crystallinity and the arbitrary-thickness thin films on the conductive substrate surface will be beneficial for the interface control of charge transfer reaction fields and the internal resistance reduction of various secondary batteries.

Preparation and characterization of flexible asymmetric supercapacitors based on transition-metal-oxide nanowire/single-walled carbon nanotube hybrid thin-film electrodes.

PubMed

Chen, Po-Chiang; Shen, Guozhen; Shi, Yi; Chen, Haitian; Zhou, Chongwu

2010-08-24

In the work described in this paper, we have successfully fabricated flexible asymmetric supercapacitors (ASCs) based on transition-metal-oxide nanowire/single-walled carbon nanotube (SWNT) hybrid thin-film electrodes. These hybrid nanostructured films, with advantages of mechanical flexibility, uniform layered structures, and mesoporous surface morphology, were produced by using a filtration method. Here, manganese dioxide nanowire/SWNT hybrid films worked as the positive electrode, and indium oxide nanowire/SWNT hybrid films served as the negative electrode in a designed ASC. In our design, charges can be stored not only via electrochemical double-layer capacitance from SWNT films but also through a reversible faradic process from transition-metal-oxide nanowires. In addition, to obtain stable electrochemical behavior during charging/discharging cycles in a 2 V potential window, the mass balance between two electrodes has been optimized. Our optimized hybrid nanostructured ASCs exhibited a superior device performance with specific capacitance of 184 F/g, energy density of 25.5 Wh/kg, and columbic efficiency of approximately 90%. In addition, our ASCs exhibited a power density of 50.3 kW/kg, which is 10-fold higher than obtained in early reported ASC work. The high-performance hybrid nanostructured ASCs can find applications in conformal electrics, portable electronics, and electrical vehicles.

Domain switching of fatigued ferroelectric thin films

NASA Astrophysics Data System (ADS)

Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

2014-05-01

We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

NASA Astrophysics Data System (ADS)

Chaisantikulwat, W.; Mouis, M.; Ghibaudo, G.; Cristoloveanu, S.; Widiez, J.; Vinet, M.; Deleonibus, S.

2007-11-01

Double-gate transistor with ultra-thin body (UTB) has proved to offer advantages over bulk device for high-speed, low-power applications. There is thus a strong need to obtain an accurate understanding of carrier transport and mobility in such device. In this work, we report for the first time an experimental evidence of mobility enhancement in UTB double-gate (DG) MOSFETs using magnetoresistance mobility extraction technique. Mobility in planar DG transistor operating in single- and double-gate mode is compared. The influence of different scattering mechanisms in the channel is also investigated by obtaining mobility values at low temperatures. The results show a clear mobility improvement in double-gate mode compared to single-gate mode mobility at the same inversion charge density. This is explained by the role of volume inversion in ultra-thin body transistor operating in DG mode. Volume inversion is found to be especially beneficial in terms of mobility gain at low-inversion densities.

Surface transport processes in charged porous media

DOE PAGES

Gabitto, Jorge; Tsouris, Costas

2017-03-03

Surface transport processes are important in chemistry, colloidal sciences, engineering, biology, and geophysics. Natural or externally produced charges on surfaces create electrical double layers (EDLs) at the solid-liquid interface. The existence of the EDLs produces several complex processes including bulk and surface transport of ions. In this work, a model is presented to simulate bulk and transport processes in homogeneous porous media comprising big pores. It is based on a theory for capacitive charging by ideally polarizable porous electrodes without Faradaic reactions or specific adsorption of ions. A volume averaging technique is used to derive the averaged transport equations inmore » the limit of thin electrical double layers. Description of the EDL between the electrolyte solution and the charged wall is accomplished using the Gouy-Chapman-Stern (GCS) model. The surface transport terms enter into the average equations due to the use of boundary conditions for diffuse interfaces. Two extra surface transports terms appear in the closed average equations. One is a surface diffusion term equivalent to the transport process in non-charged porous media. The second surface transport term is a migration term unique to charged porous media. The effective bulk and transport parameters for isotropic porous media are calculated solving the corresponding closure problems.« less

An enhanced lumped element electrical model of a double barrier memristive device

NASA Astrophysics Data System (ADS)

Solan, Enver; Dirkmann, Sven; Hansen, Mirko; Schroeder, Dietmar; Kohlstedt, Hermann; Ziegler, Martin; Mussenbrock, Thomas; Ochs, Karlheinz

2017-05-01

The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems—nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabrication may aggravate reproducible analyses. This issue makes simulation models of memristive devices worthwhile. Kinetic Monte-Carlo simulations based on a distributed model of the device can be used to understand the underlying physical and chemical phenomena. However, such simulations are very time-consuming and neither convenient for investigations of whole circuits nor for real-time applications, e.g. emulation purposes. Instead, a concentrated model of the device can be used for both fast simulations and real-time applications, respectively. We introduce an enhanced electrical model of a valence change mechanism (VCM) based double barrier memristive device (DBMD) with a continuous resistance range. This device consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-contact. The introduced model leads to very fast simulations by using usual circuit simulation tools while maintaining physically meaningful parameters. Kinetic Monte-Carlo simulations based on a distributed model and experimental data have been utilized as references to verify the concentrated model.

Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling

NASA Astrophysics Data System (ADS)

Radevici, Ivan; Tiira, Jonna; Sadi, Toufik; Oksanen, Jani

2018-05-01

Current crowding close to electrical contacts is a common challenge in all optoelectronic devices containing thin current spreading layers (CSLs). We analyze the effects of current spreading on the operation of the so-called double diode structure (DDS), consisting of a light emitting diode (LED) and a photodiode (PD) fabricated within the same epitaxial growth process, and providing an attractive platform for studying electroluminescent (EL) cooling under high bias conditions. We show that current spreading in the common n-type layer between the LED and the PD can be dramatically improved by the strong optical coupling between the diodes, as the coupling enables a photo-generated current through the PD. This reduces the current in the DDS CSL and enables the study of EL cooling using structures that are not limited by the conventional light extraction challenges encountered in normal LEDs. The current spreading in the structures is studied using optical imaging techniques, electrical measurements, simulations, as well as simple equivalent circuit models developed for this purpose. The improved current spreading leads further to a mutual dependence with the coupling efficiency, which is expected to facilitate the process of optimizing the DDS. We also report a new improved value of 63% for the DDS coupling quantum efficiency.

Startup of electrophoresis in a suspension of colloidal spheres.

PubMed

Chiang, Chia C; Keh, Huan J

2015-12-01

The transient electrophoretic response of a homogeneous suspension of spherical particles to the step application of an electric field is analyzed. The electric double layer encompassing each particle is assumed to be thin but finite, and the effect of dynamic electroosmosis within it is incorporated. The momentum equation for the fluid outside the double layers is solved through the use of a unit cell model. Closed-form formulas for the time-evolving electrophoretic and settling velocities of the particles in the Laplace transform are obtained in terms of the electrokinetic radius, relative mass density, and volume fraction of the particles. The time scale for the development of electrophoresis and sedimentation is significantly smaller for a suspension with a higher particle volume fraction or a smaller particle-to-fluid density ratio, and the electrophoretic mobility at any instant increases with an increase in the electrokinetic particle radius. The transient electrophoretic mobility is a decreasing function of the particle volume fraction if the particle-to-fluid density ratio is relatively small, but it may increase with an increase in the particle volume fraction if this density ratio is relatively large. The particle interaction effect in a suspension on the transient electrophoresis is much weaker than that on the transient sedimentation of the particles. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface transport processes in charged porous media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gabitto, Jorge; Tsouris, Costas

Surface transport processes are important in chemistry, colloidal sciences, engineering, biology, and geophysics. Natural or externally produced charges on surfaces create electrical double layers (EDLs) at the solid-liquid interface. The existence of the EDLs produces several complex processes including bulk and surface transport of ions. In this work, a model is presented to simulate bulk and transport processes in homogeneous porous media comprising big pores. It is based on a theory for capacitive charging by ideally polarizable porous electrodes without Faradaic reactions or specific adsorption of ions. A volume averaging technique is used to derive the averaged transport equations inmore » the limit of thin electrical double layers. Description of the EDL between the electrolyte solution and the charged wall is accomplished using the Gouy-Chapman-Stern (GCS) model. The surface transport terms enter into the average equations due to the use of boundary conditions for diffuse interfaces. Two extra surface transports terms appear in the closed average equations. One is a surface diffusion term equivalent to the transport process in non-charged porous media. The second surface transport term is a migration term unique to charged porous media. The effective bulk and transport parameters for isotropic porous media are calculated solving the corresponding closure problems.« less

Processing, electrical and microwave properties of sputtered Tl-Ca-Ba-Cu-O superconducting thin films

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

1993-01-01

A reproducible fabrication process has been established for TlCaBaCuO thin films on LaAlO3 substrates by RF magnetron sputtering and post-deposition processing methods. Electrical transport properties of the thin films were measured on patterned four-probe test devices. Microwave properties of the films were obtained from unloaded Q measurements of all-superconducting ring resonators. This paper describes the processing, electrical and microwave properties of Tl2Ca1Ba2Cu2O(x) 2122-plane phase thin films.

Electro-convective versus electroosmotic instability in concentration polarization.

PubMed

Rubinstein, Isaak; Zaltzman, Boris

2007-10-31

Electro-convection is reviewed as a mechanism of mixing in the diffusion layer of a strong electrolyte adjacent to a charge-selective solid, such as an ion exchange (electrodialysis) membrane or an electrode. Two types of electro-convection in strong electrolytes may be distinguished: bulk electro-convection, due to the action of the electric field upon the residual space charge of a quasi-electro-neutral bulk solution, and convection induced by electroosmotic slip, due to electric forces acting in the thin electric double layer of either quasi-equilibrium or non-equilibrium type near the solid/liquid interface. According to recent studies, the latter appears to be the likely source of mixing in the diffusion layer, leading to 'over-limiting' conductance in electrodialysis. Electro-convection near a planar uniform charge selective solid/liquid interface sets on as a result of hydrodynamic instability of one-dimensional steady state electric conduction through such an interface. We compare the results of linear stability analysis obtained for instabilities of this kind appearing in the full electro-convective and limiting non-equilibrium electroosmotic formulations. The short- and long-wave aspects of these instabilities are discussed along with the wave number selection principles.

Effects of an Inhomogenous Electric Field on an Evaporating Thin Film in a Microchannel

NASA Astrophysics Data System (ADS)

Liu, Xiuliang; Hu, Chen; Li, Huafeng; Yu, Fei; Kong, Xiaming

2018-03-01

In this paper, heat transfer enhancement in an evaporating thin film along the wall of a microchannel under an imposed inhomogenous electrostatic field is analyzed. The mathematical model, based on the augmented Young-Laplace equation with the inhomogenous electrostatic field taken into consideration, is developed. The 2D inhomogenous electric field with the curved liquid-vapor interface is solved by the lattice Boltzmann method. Numerical solutions for the thin film characteristics are obtained for both constant wall temperature and uniform wall heat flux boundary conditions. The numerical results show that the liquid film becomes thinner and the heat transfer coefficient increases under an imposed electric field. Both of octane and water are chosen as the working mediums, and similar result about the enhancement of heat transfer on evaporating thin film by imposing electric field is obtained. It is found that applying an electric field on the evaporating thin film can enhance evaporative heat transfer in a microchannel.

Lithographically patterned thin activated carbon films as a new technology platform for on-chip devices.

PubMed

Wei, Lu; Nitta, Naoki; Yushin, Gleb

2013-08-27

Continuous, smooth, visibly defect-free, lithographically patterned activated carbon films (ACFs) are prepared on the surface of silicon wafers. Depending on the synthesis conditions, porous ACFs can either remain attached to the initial substrate or be separated and transferred to another dense or porous substrate of interest. Tuning the activation conditions allows one to change the surface area and porosity of the produced carbon films. Here we utilize the developed thin ACF technology to produce prototypes of functional electrical double-layer capacitor devices. The synthesized thin carbon film electrodes demonstrated very high capacitance in excess of 510 F g(-1) (>390 F cm(-3)) at a slow cyclic voltammetry scan rate of 1 mV s(-1) and in excess of 325 F g(-1) (>250 F cm(-3)) in charge-discharge tests at an ultrahigh current density of 45,000 mA g(-1). Good stability was demonstrated after 10,000 galvanostatic charge-discharge cycles. The high values of the specific and volumetric capacitances of the selected ACF electrodes as well as the capacity retention at high current densities demonstrated great potential of the proposed technology for the fabrication of various on-chip devices, such as micro-electrochemical capacitors.

Electric shielding films for biased TEM samples and their application to in situ electron holography.

PubMed

Nomura, Yuki; Yamamoto, Kazuo; Hirayama, Tsukasa; Saitoh, Koh

2018-06-01

We developed a novel sample preparation method for transmission electron microscopy (TEM) to suppress superfluous electric fields leaked from biased TEM samples. In this method, a thin TEM sample is first coated with an insulating amorphous aluminum oxide (AlOx) film with a thickness of about 20 nm. Then, the sample is coated with a conductive amorphous carbon film with a thickness of about 10 nm, and the film is grounded. This technique was applied to a model sample of a metal electrode/Li-ion-conductive-solid-electrolyte/metal electrode for biasing electron holography. We found that AlOx film with a thickness of 10 nm has a large withstand voltage of about 8 V and that double layers of AlOx and carbon act as a 'nano-shield' to suppress 99% of the electric fields outside of the sample. We also found an asymmetry potential distribution between high and low potential electrodes in biased solid-electrolyte, indicating different accumulation behaviors of lithium-ions (Li+) and lithium-ion vacancies (VLi-) in the biased solid-electrolyte.

Mounting Thin Samples For Electrical Measurements

NASA Technical Reports Server (NTRS)

Matus, L. G.; Summers, R. L.

1988-01-01

New method for mounting thin sample for electrical measurements involves use of vacuum chuck to hold a ceramic mounting plate, which holds sample. Contacts on mounting plate establish electrical connection to sample. Used to make electrical measurements over temperature range from 77 to 1,000 K and does not introduce distortions into magnetic field during Hall measurements.

Thin film photovoltaic cell

DOEpatents

Meakin, John D.; Bragagnolo, Julio

1982-01-01

A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

Electrically Tunable Integrated Thin-Film Magnetoelectric Resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

El-Ghazaly, Amal; Evans, Joseph T.; Sato, Noriyuki

Magnetoelectrics have attracted much attention for their ability to control magnetic behavior electrically and electrical behavior magnetically. This feature provides numerous benefits to electronic systems and can potentially serve as the bridge needed to integrate magnetic devices into mainstream electronics. This natural next step is pursued and thin-film integrated magnetoelectric devices are produced for radio-frequency (RF) electronics. The first fully integrated, thin-film magnetoelectric modulators for tunable RF electronics are presented. Moreover, these devices provide electric field control of magnetic permeability in order to change the phase velocity and resonance frequency of coplanar waveguides. During this study, the various thin-film materialmore » phenomena, trade-offs, and integration considerations for composite magnetoelectrics are analyzed and discussed. The fabricated devices achieve reversible tunability of the resonance frequency, characterized by a remarkable converse magnetoelectric coupling coefficient of up to 24 mG cm V -1 using just thin films. Based on this work, suggestions are given for additional optimizations of future designs that will maximize the thin-film magnetoelectric interactions.« less

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO 3₋δ thin films and a method of stabilization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Enriquez, Erik M.; Chen, Aiping; Harrell, Zachary John

Epitaxial SrFeO 3-δ (SFO) thin films have been grown on various substrates by pulsed laser deposition. The structural and electrical properties of SFO thin films are monitored with time in different atmospheres at room temperature, showing time-dependent crystal structure and electrical conductivity. The increased out-of-plane lattice parameter and resistivity over time are associated with the increased oxygen vacancies density in SFO thin films. The epitaxial strain plays an important role in determining the initial resistivity, and the sample environment determines the trend of resistivity change over time. An amorphous Al 2O 3 passivation layer has been found to be effectivemore » in stabilizing the structure and electrical properties of SFO thin films. Lastly, this work explores time dependent structure and properties variation in oxide films and provides a way to stabilize thin film materials that are sensitive to oxygen vacancies.« less

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO 3₋δ thin films and a method of stabilization

DOE PAGES

Enriquez, Erik M.; Chen, Aiping; Harrell, Zachary John; ...

2016-10-03

Epitaxial SrFeO 3-δ (SFO) thin films have been grown on various substrates by pulsed laser deposition. The structural and electrical properties of SFO thin films are monitored with time in different atmospheres at room temperature, showing time-dependent crystal structure and electrical conductivity. The increased out-of-plane lattice parameter and resistivity over time are associated with the increased oxygen vacancies density in SFO thin films. The epitaxial strain plays an important role in determining the initial resistivity, and the sample environment determines the trend of resistivity change over time. An amorphous Al 2O 3 passivation layer has been found to be effectivemore » in stabilizing the structure and electrical properties of SFO thin films. Lastly, this work explores time dependent structure and properties variation in oxide films and provides a way to stabilize thin film materials that are sensitive to oxygen vacancies.« less

Electrically Tunable Integrated Thin-Film Magnetoelectric Resonators

DOE PAGES

El-Ghazaly, Amal; Evans, Joseph T.; Sato, Noriyuki; ...

2017-06-14

Magnetoelectrics have attracted much attention for their ability to control magnetic behavior electrically and electrical behavior magnetically. This feature provides numerous benefits to electronic systems and can potentially serve as the bridge needed to integrate magnetic devices into mainstream electronics. This natural next step is pursued and thin-film integrated magnetoelectric devices are produced for radio-frequency (RF) electronics. The first fully integrated, thin-film magnetoelectric modulators for tunable RF electronics are presented. Moreover, these devices provide electric field control of magnetic permeability in order to change the phase velocity and resonance frequency of coplanar waveguides. During this study, the various thin-film materialmore » phenomena, trade-offs, and integration considerations for composite magnetoelectrics are analyzed and discussed. The fabricated devices achieve reversible tunability of the resonance frequency, characterized by a remarkable converse magnetoelectric coupling coefficient of up to 24 mG cm V -1 using just thin films. Based on this work, suggestions are given for additional optimizations of future designs that will maximize the thin-film magnetoelectric interactions.« less

Long-time relaxation of photo-induced influence on BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Gu, Jun-xing; Jin, Kui-juan; Wang, Le; He, Xu; Guo, Hai-zhong; Wang, Can; He, Meng; Yang, Guo-zhen

2015-11-01

An intuitively persistent enhancement of the local surface potential of BiFeO3 layers in both heterostructures of BiFeO3/SrRuO3/SrTiO3 and BiFeO3/Sr0.09Nb0.01TiO3 was observed by the Kelvin probe force microscopy technique after the illumination of 375 nm laser. This photo-induced enhanced surface potential can maintain as long as 15 h after the illumination. We attributed this super-long-time relaxation of photo-induced influence to a photo-induced depolarization in the BiFeO3 thin films, and our first-principles calculation of double-potential well further provides an instinct understanding on this depolarization process. Our findings provide a peculiar understanding into the photo-induced phenomena on the widely researched ferroelectric systems and offer an approach to tune their multifunctionality of the magnetization and polarization not only by applied magnetic and electric fields but also by optical filed.

Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

DOE PAGES

Leng, X.; Bozovic, I.; Bollinger, A. T.

2016-08-10

Epitaxial indium tin oxide films have been grown on both LaAlO 3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers amore » pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.« less

Front and backside processed thin film electronic devices

DOEpatents

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2010-10-12

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Activated carbon/manganese dioxide hybrid electrodes for high performance thin film supercapacitors

NASA Astrophysics Data System (ADS)

Jang, Yunseok; Jo, Jeongdai; Jang, Hyunjung; Kim, Inyoung; Kang, Dongwoo; Kim, Kwang-Young

2014-06-01

We combine the activated carbon (AC) and the manganese dioxide (MnO2) in a AC/MnO2 hybrid electrode to overcome the low capacitance of activated carbon and MnO2 by exploiting the large surface area of AC and the fast reversible redox reaction of MnO2. An aqueous permanganate (MnO4 -) is converted to MnO2 on the surface of the AC electrode by dipping the AC electrode into an aqueous permanganate solution. The AC/MnO2 hybrid electrode is found to display superior specific capacitance of 290 F/g. This shows that supercapacitors classified as electric double layer capacitors and pseudocapacitors can be combined together.

Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells.

PubMed

Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young

2018-09-01

The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.; Sheldon, Peter; Rose, Douglas H.

1999-01-01

A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

Application of Electric Double-layer Capacitors for Energy Storage on Electric Railway

NASA Astrophysics Data System (ADS)

Hase, Shin-Ichi; Konishi, Takeshi; Okui, Akinobu; Nakamichi, Yoshinobu; Nara, Hidetaka; Uemura, Tadashi

The methods to stabilize power sources, which are the measures against voltage drop, power loading fluctuation, regeneration power lapse and so on, have been important issues in DC feeding circuits. Therefore, an energy storage medium that uses power efficiently and reduces above-mentioned problems is much concerned about. In recent years, development of energy storage medium is remarkable for drive-power supplies of electric vehicles. A number of applications of energy storage, for instance, battery and flywheel, have been investigated so far. A large-scale electric double-layer capacitor which is rapidly charged and discharged and offers long life, maintenance-free, low pollution and high efficiency, has been developed in wide range. We have compared the ability to charge batteries and electric double-layer capacitors. Therefore, we carried out fundamental studies about electric double-layer capacitors and its control. And we produced a prototype of energy storage for the DC electric railway system that consists of electric double-layer capacitors, diode bridge rectifiers, chopper system and PWM converters. From the charge and discharge tests of the prototype, useful information was obtained. This paper describes its characteristics and experimental results of energy storage system.

Capacitance of carbon-based electrical double-layer capacitors.

PubMed

Ji, Hengxing; Zhao, Xin; Qiao, Zhenhua; Jung, Jeil; Zhu, Yanwu; Lu, Yalin; Zhang, Li Li; MacDonald, Allan H; Ruoff, Rodney S

2014-01-01

Experimental electrical double-layer capacitances of porous carbon electrodes fall below ideal values, thus limiting the practical energy densities of carbon-based electrical double-layer capacitors. Here we investigate the origin of this behaviour by measuring the electrical double-layer capacitance in one to five-layer graphene. We find that the capacitances are suppressed near neutrality, and are anomalously enhanced for thicknesses below a few layers. We attribute the first effect to quantum capacitance effects near the point of zero charge, and the second to correlations between electrons in the graphene sheet and ions in the electrolyte. The large capacitance values imply gravimetric energy storage densities in the single-layer graphene limit that are comparable to those of batteries. We anticipate that these results shed light on developing new theoretical models in understanding the electrical double-layer capacitance of carbon electrodes, and on opening up new strategies for improving the energy density of carbon-based capacitors.

Nature of Dielectric Properties, Electric Modulus and AC Electrical Conductivity of Nanocrystalline ZnIn2Se4 Thin Films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.

2018-02-01

The structural characteristics of thermally deposited ZnIn2Se4 thin films were indexed utilizing x-ray diffraction as well as scanning electron microscopy techniques. Dielectric properties, electric modulus and AC electrical conductivity of ZnIn2Se4 thin films were examined in the frequency range from 42 Hz to 106 Hz. The capacitance, conductance and impedance were measured at different temperatures. The dielectric constant and dielectric loss decrease with an increase in frequency. The maximum barrier height was determined from the analysis of the dielectric loss depending on the Giuntini model. The real part of the electric modulus revealed a constant maximum value at higher frequencies and the imaginary part of the electric modulus was characterized by the appearance of dielectric relaxation peaks. The AC electrical conductivity obeyed the Jonscher universal power law. Correlated barrier hopping model was the appropriate mechanism for AC conduction in ZnIn2Se4 thin films. Estimation of the density of states at the Fermi level and activation energy, for AC conduction, was carried out based on the temperature dependence of AC electrical conductivity.

Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Do, Woori; Jin, Won-Beom; Choi, Jungwan

2014-10-15

Highlights: • Intensified visible light irradiation was generated via a high-powered Xe arc lamp. • The disordered Si atomic structure absorbs the intensified visible light. • The rapid heating activates electrically boron-implanted Si thin films. • Flash lamp heating is applicable to low temperature polycrystalline Si thin films. - Abstract: Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in themore » electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.« less

Transient electroosmotic flow induced by DC or AC electric fields in a curved microtube.

PubMed

Luo, W-J

2004-10-15

This study investigates transient electroosmotic flow in a rectangular curved microtube in which the fluid is driven by the application of an external DC or AC electric field. The resultant flow-field evolutions within the microtube are simulated using the backwards-Euler time-stepping numerical method to clarify the relationship between the changes in the axial-flow velocity and the intensity of the applied electric field. When the electric field is initially applied or varies, the fluid within the double layer responds virtually immediately, and the axial velocity within the double layer tends to follow the varying intensity of the applied electric field. The greatest net charge density exists at the corners of the microtube as a result of the overlapping electrical double layers of the two walls. It results in local maximum or minimum axial velocities in the corners during increasing or decreasing applied electric field intensity in either the positive or negative direction. As the fluid within the double layer starts to move, the bulk fluid is gradually dragged into motion through the diffusion of momentum from the double layer. A finite time is required for the full momentum of the double layer to diffuse to the bulk fluid; hence, a certain phase shift between the applied electric field and the flow response is inevitable. The patterns of the axial velocity contours during the transient evolution are investigated in this study. It is found that these patterns are determined by the efficiency of momentum diffusion from the double layer to the central region of the microtube.

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1−xFex)O3−δ Thin Films

PubMed Central

Wang, Yi-Guang; Liu, Qiu-Xiang; Jiang, Yan-Ping; Jiang, Li-Li

2017-01-01

Sr(Ti1−xFex)O3−δ (0 ≤ x ≤ 0.2) thin films were grown on Si(100) substrates with LaNiO3 buffer-layer by a sol-gel process. Influence of Fe substitution concentration on the structural, ferroelectric, and magnetic properties, as well as the leakage current behaviors of the Sr(Ti1−xFex)O3−δ thin films, were investigated by using the X-ray diffractometer (XRD), atomic force microscopy (AFM), the ferroelectric test system, and the vibrating sample magnetometer (VSM). After substituting a small amount of Ti ion with Fe, highly enhanced ferroelectric properties were obtained successfully in SrTi0.9Ti0.1O3−δ thin films, with a double remanent polarization (2Pr) of 1.56, 1.95, and 9.14 μC·cm−2, respectively, for the samples were annealed in air, oxygen, and nitrogen atmospheres. The leakage current densities of the Fe-doped SrTiO3 thin films are about 10−6–10−5 A·cm−2 at an applied electric field of 100 kV·cm−1, and the conduction mechanism of the thin film capacitors with various Fe concentrations has been analyzed. The ferromagnetic properties of the Sr(Ti1−xFex)O3−δ thin films have been investigated, which can be correlated to the mixed valence ions and the effects of the grain boundary. The present results revealed the multiferroic nature of the Sr(Ti1−xFex)O3−δ thin films. The effect of the annealing environment on the room temperature magnetic and ferroelectric properties of Sr(Ti0.9Fe0.1)O3−δ thin films were also discussed in detail. PMID:28885579

Coupling of PZT Thin Films with Bimetallic Strip Heat Engines for Thermal Energy Harvesting.

PubMed

Boughaleb, Jihane; Arnaud, Arthur; Guiffard, Benoit; Guyomar, Daniel; Seveno, Raynald; Monfray, Stéphane; Skotnicki, Thomas; Cottinet, Pierre-Jean

2018-06-06

A thermal energy harvester based on a double transduction mechanism and which converts thermal energy into electrical energy by means of piezoelectric membranes and bimetals, has previously been developed and widely presented in the literature In such a device, the thermo-mechanical conversion is ensured by a bimetal whereas the electro-mechanical conversion is generated by a piezoelectric ceramic. However, it has been shown that only 19% of the mechanical energy delivered by the bimetal during its snap is converted into electrical energy. To extract more energy from the bimetallic strip and to increase the transduction efficiency, a new way to couple piezoelectric materials with bimetals has thus been explored through direct deposition of piezoelectric layers on bimetals. This paper consequently presents an alternative way to harvest heat, based on piezoelectric bimetallic strip heat engines and presents a proof of concept of such a system. In this light, different PZT (Lead zirconate titanate) thin films were synthesized directly on aluminium foils and were attached to the bimetals using conductive epoxy. The fabrication process of each sample is presented herein as well as the experimental tests carried out on the devices. Throughout this study, different thicknesses of the piezoelectric layers and substrates were tested to determine the most powerful configuration. Finally, the study also gives some guidelines for future improvements of piezoelectric bimetals.

Electrical machines and assemblies including a yokeless stator with modular lamination stacks

DOEpatents

Qu, Ronghai; Jansen, Patrick Lee; Bagepalli, Bharat Sampathkumar; Carl, Jr., Ralph James; Gadre, Aniruddha Dattatraya; Lopez, Fulton Jose

2010-04-06

An electrical machine includes a rotor with an inner rotor portion and an outer rotor portion, and a double-sided yokeless stator. The yokeless stator includes modular lamination stacks and is configured for radial magnetic flux flow. The double-sided yokeless stator is concentrically disposed between the inner rotor portion and the outer rotor portion of the electrical machine. Examples of particularly useful embodiments for the electrical machine include wind turbine generators, ship propulsion motors, switch reluctance machines and double-sided synchronous machines.

Optical, electrical, and photovoltaic properties of PbS thin films by anionic and cationic dopants

NASA Astrophysics Data System (ADS)

Cheraghizade, Mohsen; Jamali-Sheini, Farid; Yousefi, Ramin

2017-06-01

Lead sulfide (PbS) thin films were deposited by CVD method to examine the effects of anionic and cationic dopants on optical and electrical properties for photovoltaic applications. XRD diffractograms verified the formation of cubic phase of multicrystalline PbS thin films. FESEM images showed surface morphologies in nano-dimensions (rods and flowers). UV-Vis-NIR spectrum revealed absorbance in the visible and NIR regions for all samples, in which dopants decreased the intensity of absorbance. Se as an anionic dopant for PbS thin films increased electrical resistance, acceptor concentrations, and crystallite defects, and decreased flat-band voltage and depletion width. Finally, photovoltaic measurements indicated that Zn-doped PbS thin film, as a photovoltaic cell, exhibited higher conversion efficiency and external quantum efficiency (EQE).

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

1999-07-13

A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

Structure and electrical properties of Pb(ZrxTi1-x)O3 deposited on textured Pt thin films

NASA Astrophysics Data System (ADS)

Hong, Jongin; Song, Han Wook; Lee, Hee Chul; Lee, Won Jong; No, Kwangsoo

2001-08-01

The texturing of the bottom electrode plays a key role in the structure and electrical properties of Pb(Zr, Ti)O3 (PZT) thin films. We fabricated Pt bottom electrodes having a different thickness on MgO single crystals at 600 °C by rf magnetron sputtering. As the thickness of platinum (Pt) thin film increased, the preferred orientation of Pt thin film changed from (200) to (111). PZT thin films were fabricated at 450 °C by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition on the textured Pt thin films. The texturing of the bottom electrode caused drastic changes in the C-V characteristics, P-E characteristics, and fatigue characteristics of metal/ferroelectric material/metal (MFM) capacitors. The difference of the electrical properties between the PZT thin films having different texturing was discussed in terms-of the x-y alignment and the interface between electrode and PZT in MFM capacitors.

The Electrical Double Layer and Its Structure

NASA Astrophysics Data System (ADS)

Stojek, Zbigniew

At any electrode immersed in an electrolyte solution, a specific interfacial region is formed. This region is called the double layer. The electrical properties of such a layer are important, since they significantly affect the electrochemical measurements. In an electrical circuit used to measure the current that flows at a particular working electrode, the double layer can be viewed as a capacitor. Figure I.1.1 depicts this situation where the electrochemical cell is represented by an electrical circuit and capacitor C d corresponds to the differential capacity of the double layer. To obtain a desired potential at the working electrodes, the double-layer capacitor must be first appropriately charged, which means that a capacitive current, not related to the reduction or oxidation of the substrates, flows in the electrical circuit. While this capacitive current carries some information concerning the double layer and its structure, and in some cases can be used for analytical purposes, in general, it interferes with electrochemical investigations. A variety of methods are used in electrochemistry to depress, isolate, or filter the capacitive current.

Scanning electrochemical microscopy of graphene/polymer hybrid thin films as supercapacitors: Physical-chemical interfacial processes

NASA Astrophysics Data System (ADS)

Gupta, Sanju; Price, Carson

2015-10-01

Hybrid electrode comprising an electric double-layer capacitor of graphene nanosheets and a pseudocapacitor of the electrically conducting polymers namely, polyaniline; PAni and polypyrrole; PPy are constructed that exhibited synergistic effect with excellent electrochemical performance as thin film supercapacitors for alternative energy. The hybrid supercapacitors were prepared by layer-by-layer (LbL) assembly based on controlled electrochemical polymerization followed by reduction of graphene oxide electrochemically producing ErGO, for establishing intimate electronic contact through nanoscale architecture and chemical stability, producing a single bilayer of (PAni/ErGO)1, (PPy/ErGO)1, (PAni/GO)1 and (PPy/GO)1. The rationale design is to create thin films that possess interconnected graphene nanosheets (GNS) with polymer nanostructures forming well-defined tailored interfaces allowing sufficient surface adsorption and faster ion transport due to short diffusion distances. We investigated their electrochemical properties and performance in terms of gravimetric specific capacitance, Cs, from cyclic voltammograms. The LbL-assembled bilayer films exhibited an excellent Cs of ≥350 F g-1 as compared with constituents (˜70 F g-1) at discharge current density of 0.3 A g-1 that outperformed many other hybrid supercapacitors. To gain deeper insights into the physical-chemical interfacial processes occurring at the electrode/electrolyte interface that govern their operation, we have used scanning electrochemical microscopy (SECM) technique in feedback and probe approach modes. We present our findings from viewpoint of reinforcing the role played by heterogeneous electrode surface composed of nanoscale graphene sheets (conducting) and conducting polymers (semiconducting) backbone with ordered polymer chains via higher/lower probe current distribution maps. Also targeted is SECM imaging that allowed to determine electrochemical (re)activity of surface ion adsorption sites density at solid/liquid interface.

Carbon nanotube dry adhesives with temperature-enhanced adhesion over a large temperature range.

PubMed

Xu, Ming; Du, Feng; Ganguli, Sabyasachi; Roy, Ajit; Dai, Liming

2016-11-16

Conventional adhesives show a decrease in the adhesion force with increasing temperature due to thermally induced viscoelastic thinning and/or structural decomposition. Here, we report the counter-intuitive behaviour of carbon nanotube (CNT) dry adhesives that show a temperature-enhanced adhesion strength by over six-fold up to 143 N cm -2 (4 mm × 4 mm), among the strongest pure CNT dry adhesives, over a temperature range from -196 to 1,000 °C. This unusual adhesion behaviour leads to temperature-enhanced electrical and thermal transports, enabling the CNT dry adhesive for efficient electrical and thermal management when being used as a conductive double-sided sticky tape. With its intrinsic thermal stability, our CNT adhesive sustains many temperature transition cycles over a wide operation temperature range. We discover that a 'nano-interlock' adhesion mechanism is responsible for the adhesion behaviour, which could be applied to the development of various dry CNT adhesives with novel features.

Characterization and electrochemical application of carbon materials based on poly(phenylene oxide)

NASA Astrophysics Data System (ADS)

Gray, Hunter

Carbon materials possess excellent electrical and surface properties for the next generation of energy storage devices. Polymers provide a carbon rich and tailorable precursor for the production of carbon materials. Therefore, activated carbons were prepared from poly(2,6-dimethyl-1,4-phenylene oxide) (PPO) via a three step process: thermal oxidation, carbonization, and activation with KOH. The activated carbons are predominately microporous with BET specific surface areas up to 2638 m2/g. Impedance spectroscopy revealed these carbons possess electrical conductivities comparable to commercial carbon blacks and consequently were employed in thin-film composite electrodes in electrochemical double-layer capacitors. Cyclic voltammetry confirmed maximum specific capacitances of 13.23 F/g and 2.848 F/g for aqueous and organic electrolyte systems, respectively. Additionally, carbon nanotubes were synthesized from PPO and other polymers with a nickel catalyst via chemical vapor deposition as revealed by transmission electron microscopy. This is the first report of carbon nanotubes produced from PPO.

Characteristics of a 1.6 W Gifford-McMahon Cryocooler with a Double Pipe Regenerator

NASA Astrophysics Data System (ADS)

Masuyama, S.; Numazawa, T.

2017-12-01

This paper focuses on the second stage regenerator of a 4 K Gifford-McMahon (G-M) cryocooler. A three-layer layout of lead (Pb), HoCu2 and Gd2O2S spheres in the second stage regenerator derives a good performance at 4 K. After some modifications, we confirmed that the cooling power of 1.60 W at 4.2 K was achieved by using this three-layer layout. A two-stage G-M cryocooler is RDK-408D2 (SHI) and a compressor is C300G (SUZUKISHOKAN) with a rated electric input power of 7.3 kW at 60 Hz. In order to further improve, a double pipe regenerator was applied to the second stage regenerator. As a double pipe, a stainless steel pipe with thin wall was inserted in the coaxial direction into the second stage regenerator. The helium flow in the second stage regenerator is expected to be non-uniform flow because of the distribution of helium density and the imperfect packing of regenerator material. The double pipe regenerator is considered to have an effect of restraining the non-uniform flow. From the experimental results, the second stage cooling power of 1.67 W at 4.2 K and the first stage cooling power of 64.9 W at 50 K were achieved.

Structural and electrical transport properties of La2Mo2O9 thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Paul, T.; Ghosh, A.

2017-04-01

We have studied the structure and electrical properties of La2Mo2O9 thin films of different thicknesses prepared by the laser deposition technique at different substrate temperatures. The structural properties of the thin films have been investigated using XRD, XPS, AFM, TEM, SEM, and Raman spectroscopy. The electrical transport properties of the thin films have been investigated in wide temperature and frequency ranges. The cubic nature of the thin films has been confirmed from structural analysis. An enhancement of the oxygen ion conductivity of the films up to five orders of magnitude is obtained compared to that of the bulk La2Mo2O9, suggesting usefulness of the thin films as electrolytes in micro-solid oxide fuel cells. The enhanced dc ionic conductivity of the thin films has been interpreted using the rule of the mixture model, while a power law model has been used to investigate the frequency and temperature dependences of the conductivity. The analysis of the results predicts the three-dimensional oxygen ion conduction in the thin films.

Stress-Induced Resistive Switching in Pt/HfO2/Ti Devices

NASA Astrophysics Data System (ADS)

Zeevi, Gilad; Katsman, Alexander; Yaish, Yuval E.

2018-02-01

In the present work, we study the initial SET mechanism of resistive switching (RS) in Pt/HfO2/Ti devices under a static electrical stress and the RS mechanism under a bias sweeping mode with rates of 100 mV/s-300 mV/s. We characterize the thin HfO2 dielectric layer by x-ray photoelectron spectroscopy and x-ray diffraction. These findings show that the layer structure is stoichiometric and nanocrystalline with a crystal diameter of ˜ 14 Å. We measure the temporal dependence of the conductive filament growth at different temperatures and for various biases. Furthermore, these devices present stable bipolar resistive switching with a high-to-low resistive state (HRS/LRS) ratio of more than three orders of magnitude. Activation energy E RS ≈ 0.56 eV and drift current parameter V 0 ≈ 0.07 V were determined from the temporal dependence of the initial `SET' process, first HRS to LRS transition [for static electrical stress of V DS = (4.7-5.0 V)]. We analyze the results according to our model suggesting generation of double-charge oxygen vacancies at the anode and their diffusion across the dielectric layer. The double-charge vacancies transform to a single charge and then to neutral vacancies by capturing hot electrons, and form a conductive filament as soon as a critical neutral-vacancy cluster is formed across the dielectric layer.

Theoretical analysis of optical poling and frequency doubling effect based on classical model

NASA Astrophysics Data System (ADS)

Feng, Xi; Li, Fuquan; Lin, Aoxiang; Wang, Fang; Chai, Xiangxu; Wang, Zhengping; Zhu, Qihua; Sun, Xun; Zhang, Sen; Sun, Xibo

2018-03-01

Optical poling and frequency doubling effect is one of the effective manners to induce second order nonlinearity and realize frequency doubling in glass materials. The classical model believes that an internal electric field is built in glass when it's exposed by fundamental and frequency-doubled light at the same time, and second order nonlinearity appears as a result of the electric field and the orientation of poles. The process of frequency doubling in glass is quasi phase matched. In this letter, the physical process of poling and doubling process in optical poling and frequency doubling effect is deeply discussed in detail. The magnitude and direction of internal electric field, second order nonlinear coefficient and its components, strength and direction of frequency doubled output signal, quasi phase matched coupled wave equations are given in analytic expression. Model of optical poling and frequency doubling effect which can be quantitatively analyzed are constructed in theory, which set a foundation for intensive study of optical poling and frequency doubling effect.

Thin film bismuth iron oxides useful for piezoelectric devices

DOEpatents

Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

2016-05-31

The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

Influence of electrical double-layer interaction on coal flotation.

PubMed

Harvey, Paul A; Nguyen, Anh V; Evans, Geoffrey M

2002-06-15

In the early 1930s it was first reported that inorganic electrolytes enhance the floatability of coal and naturally hydrophobic minerals. To date, explanations of coal flotation in electrolytes have not been entirely clear. This research investigated the floatability of coal in NaCl and MgCl2 solutions using a modified Hallimond tube to examine the role of the electrical double-layer interaction between bubbles and particles. Flotation of coal was highly dependent on changes in solution pH, type of electrolyte, and electrolyte concentration. Floatability of coal in electrolyte solutions was seen not to be entirely controlled by the electrical double-layer interaction. Coal flotation in low electrolyte concentration solutions decreases with increase in concentration, not expected from the theory since the electrical double layer is compressed, resulting in diminishing the (electrical double layer) repulsion between the bubble and the coal particles. Unlike in low electrolyte concentration solutions, coal flotation in high electrolyte concentration solutions increases with increase in electrolyte concentration. Again, this behavior of coal flotation in high electrolyte concentration solutions cannot be quantitatively explained using the electrical double-layer interaction. Possible mechanisms are discussed in terms of the bubston (i.e., bubble stabilized by ions) phenomenon, which explains the existence of the submicron gas bubbles on the hydrophobic coal surface.

Fatigue mechanism verified using photovoltaic properties of Pb(Zr0.52Ti0.48)O3 thin films

NASA Astrophysics Data System (ADS)

Wu, Ming; Li, Wei; Li, Junning; Wang, Shaolan; Li, Yaqi; Peng, Biaolin; Huang, Haitao; Lou, Xiaojie

2017-03-01

The photovoltaic effect and its evolution during electrical fatigue in Pb(Zr0.52Ti0.48)O3 (PZT) thin films have been investigated. It is found that the photovoltaic effect of the as-grown PZT thin film is highly affected by the asymmetric Schottky barriers, which can be tuned by applying an external electric field. During fatigue processes, both open-circuit voltage (Voc) and short-circuit current (Jsc) decrease considerably with the increase of the number of electrical cycles. This phenomenon could be ascribed to the degradation of the interfacial layer between the thin film and the electrode induced by highly energetic charge carriers injected from the electrode during bipolar cycling. Our work sheds light on the physical mechanism of both ferroelectric photovoltaics and polarization fatigue in thin-film ferroelectrics.

Maple prepared organic heterostructures for photovoltaic applications

NASA Astrophysics Data System (ADS)

Stanculescu, A.; Socol, M.; Socol, G.; Mihailescu, I. N.; Girtan, M.; Stanculescu, F.

2011-09-01

In this study, we present the deposition of ZnPc, Alq3, and PTCDA thin films using Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. We also report the realisation of multilayer structures, made by the successive application of MAPLE. The films have been characterized by spectroscopic (UV-VIS and Photoluminescence) and microscopic (SEM and AFM) methods, and the effect of different deposition conditions such as fluence, number of pulses, and target concentration on the properties has been analysed. This paper also presents some investigations on the electrical conduction in sandwich type structures ITO or Si/organic layer/Au or Cu and ITO/double organic layer/Cu, emphasising the dominant effect of the height of the energetic barriers at the inorganic/organic and organic/organic interfaces.

Carbon activation process for increased surface accessibility in electrochemical capacitors

DOEpatents

Doughty, Daniel H.; Eisenmann, Erhard T.

2001-01-01

A process for making carbon film or powder suitable for double capacitor electrodes having a capacitance of up to about 300 F/cm.sup.3 is disclosed. This is accomplished by treating in aqueous nitric acid for a period of about 5 to 15 minutes thin carbon films obtained by carbonizing carbon-containing polymeric material having a high degree of molecular directionality, such as polyimide film, then heating the treated carbon film in a non-oxidizing atmosphere at a non-graphitizing temperature of at least 350.degree. C. for about 20 minutes, and repeating alternately the nitric acid step and the heating step from 7 to 10 times. Capacitors made with this carbon may find uses ranging from electronic devices to electric vehicle applications.

Improved Epitaxy and Surface Morphology in YBa2Cu3Oy Thin Films Grown on Double Buffered Si Wafers

NASA Astrophysics Data System (ADS)

Gao, J.; Kang, L.; Wong, H. Y.; Cheung, Y. L.; Yang, J.

Highly epitaxial thin films of YBCO have been obtained on silicon wafers using a Eu2CuO4/YSZ (yttrium-stabilized ZrO2) double buffer. Our results showed that application of such a double buffer can significantly enhance the epitaxy of grown YBCO. It also leads to an excellent surface morphology. The average surface roughness was found less than 5 nm in a large range. The results of X-ray small angle reflection and positron spectroscpy demonstrate a very clear and flat interface between YBCO and buffer layers. The Eu2CuO4/YSZ double buffer could be promising for coating high-TC superconducting films on various reactive substrates.

Thickness dependent optical and electrical properties of CdSe thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Purohit, A., E-mail: anuradha.purohit34@gmail.com; Chander, S.; Nehra, S. P.

2016-05-06

The effect of thickness on the optical and electrical properties of CdSe thin films is investigated in this paper. The films of thickness 445 nm, 631 nm and 810 nm were deposited on glass and ITO coated glass substrates using thermal evaporation technique. The deposited thin films were thermally annealed in air atmosphere at temperature 100°C and were subjected to UV-Vis spectrophotometer and source meter for optical and electrical analysis respectively. The absorption coefficient is observed to increase with photon energy and found maximum in higher photon energy region. The extinction coefficient and refractive index are also calculated. The electrical analysis shows thatmore » the electrical resistivity is observed to be decreased with thickness.« less

Photo ion spectrometer

DOEpatents

Gruen, Dieter M.; Young, Charles E.; Pellin, Michael J.

1992-01-01

A thin film structure for providing predetermined electric field boundary conditions. A thin film configuration is disposed on an insulator substrate in a selected spatial pattern with substantially uniform electrically resistive character in each of the different areas of the spatial pattern.

Photo-ion spectrometer

DOEpatents

Gruen, D.M.; Young, C.E.; Pellin, M.J.

1992-03-17

A thin film structure for providing predetermined electric field boundary conditions. A thin film configuration is disposed on an insulator substrate in a selected spatial pattern with substantially uniform electrically resistive character in each of the different areas of the spatial pattern.

Thin film ferroelectric electro-optic memory

NASA Technical Reports Server (NTRS)

Thakoor, Sarita (Inventor); Thakoor, Anilkumar P. (Inventor)

1993-01-01

An electrically programmable, optically readable data or memory cell is configured from a thin film of ferroelectric material, such as PZT, sandwiched between a transparent top electrode and a bottom electrode. The output photoresponse, which may be a photocurrent or photo-emf, is a function of the product of the remanent polarization from a previously applied polarization voltage and the incident light intensity. The cell is useful for analog and digital data storage as well as opto-electric computing. The optical read operation is non-destructive of the remanent polarization. The cell provides a method for computing the product of stored data and incident optical data by applying an electrical signal to store data by polarizing the thin film ferroelectric material, and then applying an intensity modulated optical signal incident onto the thin film material to generate a photoresponse therein related to the product of the electrical and optical signals.

Time-dependent electrokinetic flows of non-Newtonian fluids in microchannel-array for energy conversion

NASA Astrophysics Data System (ADS)

Chun, Myung-Suk; Chun, Byoungjin; Lee, Ji-Young; Complex Fluids Team

2016-11-01

We investigate the externally time-dependent pulsatile electrokinetic viscous flows by extending the previous simulations concerning the electrokinetic microfluidics for different geometries. The external body force originated from between the nonlinear Poisson-Boltzmann field and the flow-induced electric field is employed in the Cauchy momentum equation, and then the Nernst-Planck equation in connection with the net current conservation is coupled. Our explicit model allows one to quantify the effects of the oscillating frequency and conductance of the Stern layer, considering the shear thinning effect and the strong electric double layer interaction. This presentation reports the new results regarding the implication of optimum frequency pressure pulsations toward realizing mechanical to electrical energy transfer with high conversion efficiencies. These combined factors for different channel dimension are examined in depth to obtain possible enhancements of streaming current, with taking advantage of pulsating pressure field. From experimental verifications by using electrokinetic power chip, it is concluded that our theoretical framework can serve as a useful basis for micro/nanofluidics design and potential applications to the enhanced energy conversion. NRF of Korea (No.2015R1A2A1A15052979) and KIST (No.2E26490).

Electrical contacts to thin layers of Bi2Sr2CaCu2O8+δ

NASA Astrophysics Data System (ADS)

Suzuki, Shota; Taniguchi, Hiroki; Kawakami, Tsukasa; Cosset-Cheneau, Maxen; Arakawa, Tomonori; Miyasaka, Shigeki; Tajima, Setsuko; Niimi, Yasuhiro; Kobayashi, Kensuke

2018-05-01

Thin layers of Bi2Sr2CaCu2O8+δ (Bi2212) were fabricated using the mechanical exfoliation technique. Good electrical contacts to the thin Bi2212 films with low contact resistance were realized by depositing Ag and Au electrodes onto the Bi2212 films and annealing them with an oxygen flow at 350 °C for 30 min. We observed cross-section images of the Bi2212 thin film device using a transmission electron microscope to characterize the diffusion of Ag and Au atoms into the Bi2212 thin film.

Tungsten-rhenium thin film thermocouples for SiC-based ceramic matrix composites

NASA Astrophysics Data System (ADS)

Tian, Bian; Zhang, Zhongkai; Shi, Peng; Zheng, Chen; Yu, Qiuyue; Jing, Weixuan; Jiang, Zhuangde

2017-01-01

A tungsten-rhenium thin film thermocouple is designed and fabricated, depending on the principle of thermal-electric effect caused by the high temperature. The characteristics of thin film thermocouples in different temperatures are investigated via numerical analysis and analog simulation. The working mechanism and thermo-electric features of the thermocouples are analyzed depending on the simulation results. Then the thin film thermocouples are fabricated and calibrated. The calibration results show that the thin film thermocouples based on the tungsten-rhenium material achieve ideal static characteristics and work well in the practical applications.

Modeling Geoelectric Fields and Geomagnetically Induced Currents Around New Zealand to Explore GIC in the South Island's Electrical Transmission Network

NASA Astrophysics Data System (ADS)

Divett, T.; Ingham, M.; Beggan, C. D.; Richardson, G. S.; Rodger, C. J.; Thomson, A. W. P.; Dalzell, M.

2017-10-01

Transformers in New Zealand's South Island electrical transmission network have been impacted by geomagnetically induced currents (GIC) during geomagnetic storms. We explore the impact of GIC on this network by developing a thin-sheet conductance (TSC) model for the region, a geoelectric field model, and a GIC network model. (The TSC is composed of a thin-sheet conductance map with underlying layered resistivity structure.) Using modeling approaches that have been successfully used in the United Kingdom and Ireland, we applied a thin-sheet model to calculate the electric field as a function of magnetic field and ground conductance. We developed a TSC model based on magnetotelluric surveys, geology, and bathymetry, modified to account for offshore sediments. Using this representation, the thin sheet model gave good agreement with measured impedance vectors. Driven by a spatially uniform magnetic field variation, the thin-sheet model results in electric fields dominated by the ocean-land boundary with effects due to the deep ocean and steep terrain. There is a strong tendency for the electric field to align northwest-southeast, irrespective of the direction of the magnetic field. Applying this electric field to a GIC network model, we show that modeled GIC are dominated by northwest-southeast transmission lines rather than east-west lines usually assumed to dominate.

Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure

NASA Astrophysics Data System (ADS)

Kim, Dae-Hwan; Jeong, Hwan-Seok; Kwon, Hyuck-In

2017-03-01

We investigate the effects of water absorption on the electrical performance and stability in high-mobility zinc oxynitride (ZnON) thin-film transistors (TFTs). The ZnON TFT exhibits a smaller field-effect mobility, lower turn-on voltage, and higher subthreshold slope with a deteriorated electrical stability under positive gate bias stresses after being exposed to water. From the Hall measurements, an increase of the electron concentration and a decrease of the Hall mobility are observed in the ZnON thin film after water absorption. The observed phenomena are mainly attributed to the water molecule-induced increase of the defective ZnXNY bond and the oxygen vacancy inside the ZnON thin film based on the x-ray photoelectron spectroscopy analysis.

Enhancement of electrical properties in polycrystalline BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Yun, Kwi Young; Ricinschi, Dan; Kanashima, Takeshi; Okuyama, Masanori

2006-11-01

Ferroelectric BiFeO3 thin films were grown on Pt /TiO2/SiO2/Si substrates by pulsed-laser deposition. From the x-ray diffraction analysis, the BiFeO3 thin films consist of perovskite single phase, and the crystal structure shows the tetragonal structure with a space group P4mm. The BiFeO3 thin films show enhanced electrical properties with low leakage current density value of ˜10-4A /cm2 at a maximum applied voltage of 31V. This enhanced electrical resistivity allowed the authors to obtain giant ferroelectric polarization values such as saturation polarizations of 110 and 166μC/cm2 at room temperature and 80K, respectively.

Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mouro, J.; Gualdino, A.; Chu, V.

2013-11-14

Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three differentmore » types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.« less

Efficient semitransparent perovskite solar cells for 23.0%-efficiency perovskite/silicon four-terminal tandem cells

DOE PAGES

Chen, Bo; Bai, Yang; Yu, Zhengshan; ...

2016-07-19

Here, we have investigated semi-transparent perovskite solar cells and infrared enhanced silicon heterojunction cells for high-efficiency tandem devices. A semi-transparent metal electrode with good electrical conductivity and optical transparency has been fabricated by thermal evaporation of 7 nm of Au onto a 1-nm-thick Cu seed layer. For this electrode to reach its full potential, MAPbI3 thin films were formed by a modified one-step spin-coating method, resulting in a smooth layer that allowed the subsequent metal thin film to remain continuous. The fabricated semi-transparent perovskite solar cells demonstrated 16.5% efficiency under one-sun illumination, and were coupled with infrared-enhanced silicon heterojunction cellsmore » tuned specifically for perovskite/Si tandem devices. A double-layer antireflection coating at the front side and MgF2 reflector at rear side of the silicon heterojunction cells reduced parasitic absorption of near-infrared light, leading to 6.5% efficiency after filtering with a perovskite device and 23.0% summed efficiency for the perovskite/Si tandem device.« less

Current profile control experiments in EXTRAP T2R

NASA Astrophysics Data System (ADS)

Brunsell, P.; Cecconello, M.; Drake, J.; Franz, P.; Malmberg, J. A.; Marrelli, L.; Martin, P.; Spizzo, G.

2002-11-01

EXTRAP T2R is a high aspect ratio (R=1.24 m, a = 0.183 m) reversed-field pinch device, characterised by a double, thin shell system. The simultaneous presence of many m=1, |n| > 11 tearing modes is responsible for a magnetic field turbulence, which is believed to produce the rather high energy and particle transport that is observed in this type of magnetic configuration. In this paper first results from current profile control experiments (PPCD) in a thin shell device are shown. When an edge poloidal electric field is transiently applied, an increase of the electron temperature and of the electron density is seen, which is consistent with an increase of the thermal content of the plasma. At the same time, the soft x-ray emission, measured with a newly installed miniaturised camera, shows a peaking of the profile in the core. Furthermore, the amplitudes of the m=1 tearing modes are reduced and and the rotation velocities increase during PPCD, which is also consistent with a reduction of magnetic turbulence and a heating of the plasma

On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

NASA Astrophysics Data System (ADS)

Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

2017-04-01

Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

Residual ferroelectricity in barium strontium titanate thin film tunable dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garten, L. M., E-mail: lmg309@psu.edu; Trolier-McKinstry, S.; Lam, P.

2014-07-28

Loss reduction is critical to develop Ba{sub 1−x}Sr{sub x}TiO{sub 3} thin film tunable microwave dielectric components and dielectric energy storage devices. The presence of ferroelectricity, and hence the domain wall contributions to dielectric loss, will degrade the tunable performance in the microwave region. In this work, residual ferroelectricity—a persistent ferroelectric response above the global phase transition temperature—was characterized in tunable dielectrics using Rayleigh analysis. Chemical solution deposited Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} films, with relative tunabilities of 86% over 250 kV/cm at 100 kHz, demonstrated residual ferroelectricity 65 °C above the ostensible paraelectric transition temperature. Frequency dispersion observed in the dielectric temperature response wasmore » consistent with the presence of nanopolar regions as one source of residual ferroelectricity. The application of AC electric field for the Rayleigh analysis of these samples led to a doubling of the dielectric loss for fields over 10 kV/cm at room temperature.« less

Efficient semitransparent perovskite solar cells for 23.0%-efficiency perovskite/silicon four-terminal tandem cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Bo; Bai, Yang; Yu, Zhengshan

Here, we have investigated semi-transparent perovskite solar cells and infrared enhanced silicon heterojunction cells for high-efficiency tandem devices. A semi-transparent metal electrode with good electrical conductivity and optical transparency has been fabricated by thermal evaporation of 7 nm of Au onto a 1-nm-thick Cu seed layer. For this electrode to reach its full potential, MAPbI3 thin films were formed by a modified one-step spin-coating method, resulting in a smooth layer that allowed the subsequent metal thin film to remain continuous. The fabricated semi-transparent perovskite solar cells demonstrated 16.5% efficiency under one-sun illumination, and were coupled with infrared-enhanced silicon heterojunction cellsmore » tuned specifically for perovskite/Si tandem devices. A double-layer antireflection coating at the front side and MgF2 reflector at rear side of the silicon heterojunction cells reduced parasitic absorption of near-infrared light, leading to 6.5% efficiency after filtering with a perovskite device and 23.0% summed efficiency for the perovskite/Si tandem device.« less

Shear-strain gradient induced polarization reversal in ferroelectric BaTiO3 thin films: A first-principles total-energy study

NASA Astrophysics Data System (ADS)

Li, Guannan; Huang, Xiaokun; Hu, Jingsan; Zhang, Weiyi

2017-04-01

Based on the first-principles total-energy calculation, we have studied the shear-strain gradient effect on the polarization reversal of ferroelectric BaTiO3 thin films. By calculating the energies of double-domain supercells for different electric polarization, shear-strain gradients, and domain-wall displacement, we extracted, in addition to the domain-wall energy, the polarization energy, elastic energy, and flexoelectric coefficient of a single domain. The constructed Landau-Devonshire phenomenological theory yields a critical shear-strain gradient of 9.091 ×107/m (or a curvature radius (R ) of 110 Å) for reversing the 180∘ domain at room temperature, which is on the same order of the experimentally estimated value of 3.333 ×107/m (R =300 Å ). In contrast to the commonly used linear response theory, the flexoelectric coefficient derived from fitting the total energy to a Landau-Devonshire energy functional does not depend on the specific pseudopotential. Thus, our method offers an alternative numerical approach to study the flexoelectric effect.

Carbon-Nanotube Conductive Layers for Thin-Film Solar Cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.

2005-01-01

Thin, transparent layers comprising mats of carbon nanotubes have been proposed for providing lateral (that is, inplane) electrical conductivities for collecting electric currents from the front surfaces of the emitter layers of thin-film solar photovoltaic cells. Traditionally, thin, semitransparent films of other electrically conductive materials (usually, indium tin oxide, zinc oxide, or cadmium sulfide) have been used for this purpose. As in the cases of the traditional semitransparent conductive films, the currents collected by the nanotube layers would, in turn, be further collected by front metal contact stripes. Depending on details of a specific solar-cell design, the layer of carbon nanotubes would be deposited in addition to, or instead of, a semitransparent layer of one of these traditional conductive materials (see figure). The proposal is expected to afford the following advantages: The electrical conductivity of the carbon- nanotube layer would exceed that of the corresponding semitransparent layer of traditional electrically conductive material. The greater electrical conductivity of the carbon-nanotube layer would make it possible to retain adequate lateral electrical conductivity while reducing the thickness of, or eliminating entirely, the traditional semitransparent conductive layer. As a consequence of thinning or elimination of the traditional semitransparent conductive layer, less light would be absorbed, so that more of the incident light would be available for photovoltaic conversion. The greater electrical conductivity of the carbon-nanotube layer would make it possible to increase the distance between front metal contact stripes, in addition to (or instead of) thinning or eliminating the layer of traditional semitransparent conductive material. Consequently, the fraction of solar-cell area shadowed by front metal contact stripes would be reduced again, making more of the incident light available for photovoltaic conversion. The electrical conductivities of individual carbon nanotubes can be so high that the mat of carbon nanotubes could be made sparse enough to be adequately transparent while affording adequate lateral electrical conductivity of the mat as a whole. The thickness of the nanotube layer would be chosen so that the layer would contribute significant lateral electrical conductivity, yet would be as nearly transparent as possible to incident light. A typical thickness for satisfying these competing requirements is expected to lie between 50 and 100 nm. The optimum thickness must be calculated by comparing the lateral electrical conductivity, the distance between front metal stripes, and the amount of light lost by absorption in the nanotube layer.

Fuel to burn : economics of converting forest thinnings to energy using BioMax in southern Oregon

Treesearch

E.M. (Ted) Bilek; Kenneth E. Skog; Jeremy Fried; Glenn Christensen

2005-01-01

Small-scale gasification plants that generate electrical energy from forest health thinnings may have the potential to deliver substantial amounts of electricity to the national grid. We evaluated the economic feasibility of two sizes of BioMax, a generator manufactured by the Community Power Corporation of Littleton, Colorado. At current avoided- cost electricity...

Fuel to burn: economics of converting forest thinnings to energy using BioMax in southern Oregon.

Treesearch

E.M. (Ted) Bilek; Kenneth E. Skog; Jeremy Fried; Glenn Christensen

2005-01-01

Small-scale gasification plants that generate electrical energy from forest health thinnings may have the potential to deliver substantial amounts of electricity to the national grid. We evaluated the economic feasibility of two sizes of BioMax, a generator manufactured by the Community Power Corporation of Littleton, Colorado. At current avoided-cost electricity...

Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

NASA Astrophysics Data System (ADS)

Chang, R. C.; Li, T. C.; Lin, C. W.

2012-02-01

Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.

An investigation on magnetic responses in Ag-SiO2-Ag nanosandwich structures

NASA Astrophysics Data System (ADS)

Jen, Yi-Jun; Jhou, Jheng-Jie; Yu, Ching-Wei

2011-10-01

In this work, we investigate magnetic responses in various Ag-SiO2-Ag nanosandwich structures at visible wavelengths. The two electric resonant modes corresponding to the in-phase (symmetric) and anti-phase (asymmetric) electric dipole on the top and the bottom nanopillars are observed by the finite difference time domain (FDTD) simulation. In the asymmetric resonant mode, the phases of electric fields oscillating in the top and bottom pillars have opposite directions, leading to a virtual current loop that induces the magnetic field reversal. The nanosandwich structure produces a large enhancement of the magnetic field as the thickness of SiO2 nanopillar is much smaller than wavelength. By increasing the diameter of nanopillars from 150 nm to 250 nm, the inverse magnetic response wavelength shifts from 532 nm to 690 nm. On account of the magnetic field reversal caused by the anti-phase electric dipole coupling, the real part of the equivalent permeability of the film is negative. Therefore, the wavelength range associated with the intensity of inverse magnetic response is tunable by varying the size of Ag-SiO2-Ag nanosandwich structure. The equivalent electromagnetic parameters of the Ag-SiO2-Ag nanosandwich thin film prepared by glancing angle deposition are derived from the transmission and the reflection coefficients measured by walk-off interferometers. The measured results indicate that film exhibit double negative properties and lead to negative values of the real parts of equivalent refractive indices -0.854, -1.179, and -1.492 for λ = 532 nm, 639 nm, and 690 nm, respectively. Furthermore, the real part of permeability is negatively enhanced to be -4.771 and the maximum value of figures of merit (FOM) recorded being 6.543 for p-polarized light at λ = 690 nm. Finally, we analyze the admittance loci for our nanosandwich thin film. This analysis can be applied to interpret extraordinary optical properties such as negative index of refraction from Ag-SiO2-Ag nanosandwich films.

Electrical power generation by mechanically modulating electrical double layers.

PubMed

Moon, Jong Kyun; Jeong, Jaeki; Lee, Dongyun; Pak, Hyuk Kyu

2013-01-01

Since Michael Faraday and Joseph Henry made their great discovery of electromagnetic induction, there have been continuous developments in electrical power generation. Most people today get electricity from thermal, hydroelectric, or nuclear power generation systems, which use this electromagnetic induction phenomenon. Here we propose a new method for electrical power generation, without using electromagnetic induction, by mechanically modulating the electrical double layers at the interfacial areas of a water bridge between two conducting plates. We find that when the height of the water bridge is mechanically modulated, the electrical double layer capacitors formed on the two interfacial areas are continuously charged and discharged at different phases from each other, thus generating an AC electric current across the plates. We use a resistor-capacitor circuit model to explain the results of this experiment. This observation could be useful for constructing a micro-fluidic power generation system in the near future.

The impact of electrostatic correlations on Dielectrophoresis of Non-conducting Particles

NASA Astrophysics Data System (ADS)

Alidoosti, Elaheh; Zhao, Hui

2017-11-01

The dipole moment of a charged, dielectric, spherical particle under the influence of a uniform alternating electric field is computed theoretically and numerically by solving the modified continuum Poisson-Nernst-Planck (PNP) equations accounting for ion-ion electrostatic correlations that is important at concentrated electrolytes (Phys. Rev. Lett. 106, 2011). The dependence on the frequency, zeta potential, electrostatic correlation lengths, and double layer thickness is thoroughly investigated. In the limit of thin double layers, we carry out asymptotic analysis to develop simple models which are in good agreement with the modified PNP model. Our results suggest that the electrostatic correlations have a complicated impact on the dipole moment. As the electrostatic correlations length increases, the dipole moment decreases, initially, reach a minimum, and then increases since the surface conduction first decreases and then increases due to the ion-ion correlations. The modified PNP model can improve the theoretical predictions particularly at low frequencies where the simple model can't qualitatively predict the dipole moment. This work was supported, in part, by NIH R15GM116039.

Photovoltaic sub-cell interconnects

DOE Office of Scientific and Technical Information (OSTI.GOV)

van Hest, Marinus Franciscus Antonius Maria; Swinger Platt, Heather Anne

2017-05-09

Photovoltaic sub-cell interconnect systems and methods are provided. In one embodiment, a photovoltaic device comprises a thin film stack of layers deposited upon a substrate, wherein the thin film stack layers are subdivided into a plurality of sub-cells interconnected in series by a plurality of electrical interconnection structures; and wherein the plurality of electrical interconnection structures each comprise no more than two scribes that penetrate into the thin film stack layers.

Voltage-Rectified Current and Fluid Flow in Conical Nanopores.

PubMed

Lan, Wen-Jie; Edwards, Martin A; Luo, Long; Perera, Rukshan T; Wu, Xiaojian; Martin, Charles R; White, Henry S

2016-11-15

Ion current rectification (ICR) refers to the asymmetric potential-dependent rate of the passage of solution ions through a nanopore, giving rise to electrical current-voltage characteristics that mimic those of a solid-state electrical diode. Since the discovery of ICR in quartz nanopipettes two decades ago, synthetic nanopores and nanochannels of various geometries, fabricated in membranes and on wafers, have been extensively investigated to understand fundamental aspects of ion transport in highly confined geometries. It is now generally accepted that ICR requires an asymmetric electrical double layer within the nanopore, producing an accumulation or depletion of charge-carrying ions at opposite voltage polarities. Our research groups have recently explored how the voltage-dependent ion distributions and ICR within nanopores can induce novel nanoscale flow phenomena that have applications in understanding ionics in porous materials used in energy storage devices, chemical sensing, and low-cost electrical pumping of fluids. In this Account, we review our most recent investigations on this topic, based on experiments using conical nanopores (10-300 nm tip opening) fabricated in thin glass, mica, and polymer membranes. Measurable fluid flow in nanopores can be induced either using external pressure forces, electrically via electroosmotic forces, or by a combination of these two forces. We demonstrate that pressure-driven flow can greatly alter the electrical properties of nanopores and, vice versa, that the nonlinear electrical properties of conical nanopores can impart novel and useful flow phenomena. Electroosmotic flow (EOF), which depends on the magnitude of the ion fluxes within the double layer of the nanopore, is strongly coupled to the accumulation/depletion of ions. Thus, the same underlying cause of ICR also leads to EOF rectification, i.e., unequal flows occurring for the same voltage but opposite polarities. EOF rectification can be used to electrically pump fluids with very precise control across membranes containing conical pores via the application of a symmetric sinusoidal voltage. The combination of pressure and asymmetric EOF can also provide a means to generate new nanopore electrical behaviors, including negative differential resistance (NDR), in which the current through a conical pore decreases with increasing driving force (applied voltage), similar to solid-state tunnel diodes. NDR results from a positive feedback mechanism between the ion distributions and EOF, yielding a true bistability in both fluid flow and electrical current at a critical applied voltage. Nanopore-based NDR is extremely sensitive to the surface charge near the nanopore opening, suggesting possible applications in chemical sensing.

High-throughput screening for combinatorial thin-film library of thermoelectric materials.

PubMed

Watanabe, Masaki; Kita, Takuji; Fukumura, Tomoteru; Ohtomo, Akira; Ueno, Kazunori; Kawasaki, Masashi

2008-01-01

A high-throughput method has been developed to evaluate the Seebeck coefficient and electrical resistivity of combinatorial thin-film libraries of thermoelectric materials from room temperature to 673 K. Thin-film samples several millimeters in size were deposited on an integrated Al2O3 substrate with embedded lead wires and local heaters for measurement of the thermopower under a controlled temperature gradient. An infrared camera was used for real-time observation of the temperature difference Delta T between two electrical contacts on the sample to obtain the Seebeck coefficient. The Seebeck coefficient and electrical resistivity of constantan thin films were shown to be almost identical to standard data for bulk constantan. High-throughput screening was demonstrated for a thermoelectric Mg-Si-Ge combinatorial library.

A review of molecular modelling of electric double layer capacitors.

PubMed

Burt, Ryan; Birkett, Greg; Zhao, X S

2014-04-14

Electric double-layer capacitors are a family of electrochemical energy storage devices that offer a number of advantages, such as high power density and long cyclability. In recent years, research and development of electric double-layer capacitor technology has been growing rapidly, in response to the increasing demand for energy storage devices from emerging industries, such as hybrid and electric vehicles, renewable energy, and smart grid management. The past few years have witnessed a number of significant research breakthroughs in terms of novel electrodes, new electrolytes, and fabrication of devices, thanks to the discovery of innovative materials (e.g. graphene, carbide-derived carbon, and templated carbon) and the availability of advanced experimental and computational tools. However, some experimental observations could not be clearly understood and interpreted due to limitations of traditional theories, some of which were developed more than one hundred years ago. This has led to significant research efforts in computational simulation and modelling, aimed at developing new theories, or improving the existing ones to help interpret experimental results. This review article provides a summary of research progress in molecular modelling of the physical phenomena taking place in electric double-layer capacitors. An introduction to electric double-layer capacitors and their applications, alongside a brief description of electric double layer theories, is presented first. Second, molecular modelling of ion behaviours of various electrolytes interacting with electrodes under different conditions is reviewed. Finally, key conclusions and outlooks are given. Simulations on comparing electric double-layer structure at planar and porous electrode surfaces under equilibrium conditions have revealed significant structural differences between the two electrode types, and porous electrodes have been shown to store charge more efficiently. Accurate electrolyte and electrode models which account for polarisation effects are critical for future simulations which will consider more complex electrode geometries, particularly for the study of dynamics of electrolyte transport, where the exclusion of electrode polarisation leads to significant artefacts.

Drying temperature effects on electrical and optical properties of poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin film

NASA Astrophysics Data System (ADS)

Azhar, N. E. A.; Affendi, I. H. H.; Shafura, A. K.; Shariffudin, S. S.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2016-07-01

Temperature effects on electrical and optical properties of a representative semiconducting polymer, poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), has recently attracted much attention. The MEH-PPV thin films were deposited at different drying temperature (anneal temperature) using spin-coating technique. The spin coating technique was used to produce uniform film onto large area. The MEH-PPV was dissolved in toluene solution to exhibits different optical and electrical properties. The absorption coefficient and bandgap was measured using UV-Visible-NIR (UV-VIS-NIR). The bandgap of MEH-PPV was effect by the thickness of thin films. For electrical properties, two-point probe was used to characterize the current-voltage measurement. The current-voltage measurement shows that the MEH-PPV thin films become more conductive at high temperature. This study will provide better performance and suitable for optoelectronic device especially OLEDs applications.

Drying temperature effects on electrical and optical properties of poly[2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azhar, N. E. A., E-mail: najwaezira@yahoo.com; Affendi, I. H. H., E-mail: irmahidayanti.halim@gmail.com; Shafura, A. K., E-mail: shafura@ymail.com

Temperature effects on electrical and optical properties of a representative semiconducting polymer, poly[2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), has recently attracted much attention. The MEH-PPV thin films were deposited at different drying temperature (anneal temperature) using spin-coating technique. The spin coating technique was used to produce uniform film onto large area. The MEH-PPV was dissolved in toluene solution to exhibits different optical and electrical properties. The absorption coefficient and bandgap was measured using UV-Visible-NIR (UV-VIS-NIR). The bandgap of MEH-PPV was effect by the thickness of thin films. For electrical properties, two-point probe was used to characterize the current-voltage measurement. The current-voltage measurement showsmore » that the MEH-PPV thin films become more conductive at high temperature. This study will provide better performance and suitable for optoelectronic device especially OLEDs applications.« less

Studies on surface morphology and electrical conductivity of PEDOT:PSS thin films in presence of gold nanoparticles

NASA Astrophysics Data System (ADS)

Bhowal, Ashim Chandra; Kundu, Sarathi

2018-04-01

PEDOT:PSS is a water soluble conducting polymer consists of positively charged PEDOT and negatively charged PSS. However, this polymer suffers low conductivity problem which restrict its use. In this paper, electrical conductivity of PEDOT:PSS thin films is improved by using charged gold nanoparticles. The nanoparticles used are synthesized using lysozyme protein. The nanoparticles coated with lysozyme protein possess positive zeta potential. In the presence of gold nanoparticles due to electrostatic interaction between positively charged nanoparticles and negatively charged PSS chains, modification takes place in the surface morphology and electrical behaviors of PEDOT:PSS thin films. The changes in the polymer matrix conformations in the presence of nanoparticles are studied by Fourier transformed Infra-red (FTIR) spectroscopy, whereas the surface morphology of prepared thin films before and after interaction with nanoparticles is investigated through atomic force microscopy (AFM). Four probe method is used to measure the variation of electrical conductivity from I-V characteristics curves.

Impact of thinning on soil properties and biomass in Apalachicola National Forest, Florida

Treesearch

Kelechi James Nwaokorie; Odemari Stephen Mbuya; Johnny Grace

2016-01-01

The effect of a silvicultural operation, row thinning at two intensities (single row, SR, and double row, DR, thinning), on soil properties and biomass were investigated in selected 28 year-old slash pine (Pinus elliotti) plantations in the Apalachicola National Forest. Stands were thinned in May 2011 and burn regimes were executed during dormant...

Parallel electric fields in extragalactic jets - Double layers and anomalous resistivity in symbiotic relationships

NASA Technical Reports Server (NTRS)

Borovsky, J. E.

1986-01-01

After examining the properties of Coulomb-collision resistivity, anomalous (collective) resistivity, and double layers, a hybrid anomalous-resistivity/double-layer model is introduced. In this model, beam-driven waves on both sides of a double layer provide electrostatic plasma-wave turbulence that greatly reduces the mobility of charged particles. These regions then act to hold open a density cavity within which the double layer resides. In the double layer, electrical energy is dissipated with 100 percent efficiency into high-energy particles, creating conditions optimal for the collective emission of polarized radio waves.

Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

NASA Astrophysics Data System (ADS)

Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

2017-07-01

In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

Thin film coatings for space electrical power system applications

NASA Technical Reports Server (NTRS)

Gulino, Daniel A.

1989-01-01

This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

Thin film coatings for space electrical power system applications

NASA Technical Reports Server (NTRS)

Gulino, Daniel A.

1988-01-01

This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

Preparation and characterization of double layer thin films ZnO/ZnO:Ag for methylene blue photodegradation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wibowo, Singgih, E-mail: singgih@st.fisika.undip.ac.id; Sutanto, Heri, E-mail: herisutanto@undip.ac.id

2016-02-08

Double layer (DL) thin films of zinc oxide and silver-doped zinc oxide (ZnO/ZnO:Ag) were deposited on glass substrate by sol-gel spray coating technique. The prepared thin films were subjected for optical and photocatalytic studies. UV-visible transmission spectra shows that the subtitution of Ag in ZnO leads to band gap reduction. The influence of Ag doping on the photocatalytic activity of ZnO for the degradation of methylene blue dye was studied under solar radiation. The light absorption over an extended visible region by Ag ion doping in ZnO film contributed equally to improve the photocatalytic activity up to 98.29%.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Becker, Ines; Schillig, Cora

A double-sided adhesive metal-based tape for use as contacting aid for SOFC fuel cells is provided. The double-sided metal-based adhesive tape is suitable for simplifying the construction of cell bundles. The double-sided metal-based adhesive tape is used for electrical contacting of the cell connector with the anode and for electrical contacting of the interconnector of the fuel cells with the cell connector. A method for producing the double-sided adhesive metal-base tape is also provided.

Strain, temperature, and electric-field effects on the phase transition and piezoelectric responses of K0.5Na0.5NbO3 thin films

NASA Astrophysics Data System (ADS)

Zhou, Meng-Jun; Wang, Jian-Jun; Chen, Long-Qing; Nan, Ce-Wen

2018-04-01

A KNbO3-based solid solution system is environmentally friendly with good electromechanical performance. This work established the misfit strain-strain and temperature-strain phase diagrams for K0.5Na0.5NbO3 thin films and calculated the polarization switching, phase transition, and piezoelectric responses of K0.5Na0.5NbO3 thin films under various strains, temperatures, and electric fields. The results show that the piezoelectric coefficient d33 can be enhanced near the phase boundaries. For the ferroelectric phase with a nonzero out-of-plane polarization component, an optimal electric field is identified for maximizing d33, which is desired in applications such as thin-film piezoelectric micro-electromechanical systems, transducers for ultrasound medical imaging, and energy harvesting. The present results are expected to provide guidance for the future experimental study of KxNa1-xNbO3 thin films and the optimization of ferroelectric thin film-based devices.

Enhanced electrical properties in solution-processed InGaZnO thin-film transistors by viable hydroxyl group transfer process

NASA Astrophysics Data System (ADS)

Kim, Do-Kyung; Jeong, Hyeon-Seok; Kwon, Hyeok Bin; Kim, Young-Rae; Kang, Shin-Won; Bae, Jin-Hyuk

2018-05-01

We propose a simple hydroxyl group transfer method to improve the electrical characteristics of solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs). Tuned poly(dimethylsiloxane) elastomer, which has a hydroxyl group as a terminal chemical group, was adhered temporarily to an IGZO thin-film during the solidification step to transfer and supply sufficient hydroxyl groups to the IGZO thin-film. The transferred hydroxyl groups led to efficient hydrolysis and condensation reactions, resulting in a denser metal–oxygen–metal network being achieved in the IGZO thin-film compared to the conventional IGZO thin-film. In addition, it was confirmed that there was no morphological deformation, including to the film thickness and surface roughness. The hydroxyl group transferred IGZO based TFTs exhibited enhanced electrical properties (field-effect mobility of 2.21 cm2 V‑1 s‑1, and on/off current ratio of 106) compared to conventional IGZO TFTs (field-effect mobility of 0.73 cm2 V‑1 s‑1 and on/off current ratio of 105).

Effect of in situ electric-field-assisted growth on antiphase boundaries in epitaxial Fe3O4 thin films on MgO

NASA Astrophysics Data System (ADS)

Kumar, Ankit; Wetterskog, Erik; Lewin, Erik; Tai, Cheuk-Wai; Akansel, Serkan; Husain, Sajid; Edvinsson, Tomas; Brucas, Rimantas; Chaudhary, Sujeet; Svedlindh, Peter

2018-05-01

Antiphase boundaries (APBs) normally form as a consequence of the initial growth conditions in all spinel ferrite thin films. These boundaries result from the intrinsic nucleation and growth mechanism, and are observed as regions where the periodicity of the crystalline lattice is disrupted. The presence of APBs in epitaxial films of the inverse spinel Fe3O4 alters their electronic and magnetic properties due to strong antiferromagnetic (AF) interactions across these boundaries. We explore the effect of using in-plane in situ electric-field-assisted growth on the formation of APBs in heteroepitaxial Fe3O4 (100)/MgO(100) thin films. The electric-field-assisted growth is found to reduce the AF interactions across APBs and, as a consequence, APB-free thin-film-like properties are obtained, which have been probed by electronic, magnetic, and structural characterization. The electric field plays a critical role in controlling the density of APBs during the nucleation process by providing an electrostatic force acting on adatoms and therefore changing their kinetics. This innovative technique can be employed to grow epitaxial spinel thin films with controlled AF interactions across APBs.

Growth and characterization of sol-gel derived CuGaO2 semiconductor thin films for UV photodetector application

NASA Astrophysics Data System (ADS)

Tsay, Chien-Yie; Chen, Ching-Lien

2017-06-01

In this study, a p-type wide-bandgap oxide semiconductor CuGaO2 thin film was grown on quartz substrate by sol-gel method. The authors report the influence of annealing temperature on the phase transformation, structural features, and electrical properties of sol-gel derived Cu-Ga-O thin films. At relatively low annealing temperatures (≤900 °C), the films are a mixture of CuGa2O4, CuGaO2, and CuO phases. At relatively high annealing temperatures (≥925 °C), the majority phase in the films is delafossite CuGaO2. All as-prepared Cu-Ga-O thin films exhibited p-type conductivity, as confirmed by Hall measurements. The mean electrical resistivity of the Cu-Ga-O films decreased from 3.54×104 Ω-cm to 1.35×102 Ω-cm and then increased slightly to 3.51×102 Ω-cm when the annealing temperature was increased from 850 °C to 950 °C. We found that annealing the Cu-based oxide thin films at 925 °C produced nearly phase-pure CuGaO2 thin films with good densification. Such thin films exhibited the best electrical properties: a mean electrical resistivity of 1.35×102 Ω-cm, and a mean hole concentration of 1.60×1016 cm-3. In addition, we also fabricated and characterized MSM-type CuGaO2 UV photodetectors on quartz substrates.

Lorentz factor determination for local electric fields in semiconductor devices utilizing hyper-thin dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

McPherson, J. W., E-mail: mcpherson.reliability@yahoo.com

The local electric field (the field that distorts, polarizes, and weakens polar molecular bonds in dielectrics) has been investigated for hyper-thin dielectrics. Hyper-thin dielectrics are currently required for advanced semiconductor devices. In the work presented, it is shown that the common practice of using a Lorentz factor of L = 1/3, to describe the local electric field in a dielectric layer, remains valid for hyper-thin dielectrics. However, at the very edge of device structures, a rise in the macroscopic/Maxwell electric field E{sub diel} occurs and this causes a sharp rise in the effective Lorentz factor L{sub eff}. At capacitor and transistor edges,more » L{sub eff} is found to increase to a value 2/3 < L{sub eff} < 1. The increase in L{sub eff} results in a local electric field, at device edge, that is 50%–100% greater than in the bulk of the dielectric. This increase in local electric field serves to weaken polar bonds thus making them more susceptible to breakage by standard Boltzmann and/or current-driven processes. This has important time-dependent dielectric breakdown (TDDB) implications for all electronic devices utilizing polar materials, including GaN devices that suffer from device-edge TDDB.« less

Modeling electrical double-layer effects for microfluidic impedance spectroscopy from 100 kHz to 110 GHz.

PubMed

Little, Charles A E; Orloff, Nathan D; Hanemann, Isaac E; Long, Christian J; Bright, Victor M; Booth, James C

2017-07-25

Broadband microfluidic-based impedance spectroscopy can be used to characterize complex fluids, with applications in medical diagnostics and in chemical and pharmacological manufacturing. Many relevant fluids are ionic; during impedance measurements ions migrate to the electrodes, forming an electrical double-layer. Effects from the electrical double-layer dominate over, and reduce sensitivity to, the intrinsic impedance of the fluid below a characteristic frequency. Here we use calibrated measurements of saline solution in microfluidic coplanar waveguide devices at frequencies between 100 kHz and 110 GHz to directly measure the double-layer admittance for solutions of varying ionic conductivity. We successfully model the double-layer admittance using a combination of a Cole-Cole response with a constant phase element contribution. Our analysis yields a double-layer relaxation time that decreases linearly with solution conductivity, and allows for double-layer effects to be separated from the intrinsic fluid response and quantified for a wide range of conducting fluids.

Electrodynamics of frictional interaction in tribolink “metal-polymer”

NASA Astrophysics Data System (ADS)

Volchenko, N. A.; Krasin, P. S.; Volchenko, A. I.; Zhuravlev, D. Yu

2018-03-01

The materials of the article illustrate the estimation of the energy loading of a metal friction element in the metal-electrolyte-polymer friction pair while forming various types of double electrical layers with the release of its thermal stabilization state. The energy loading of the contact spots of the microprotrusions of the friction pairs of braking devices depends to a large extent on the electrical, thermal and chemical fields that are of a different nature to an allowable temperature and are above the surface layers of the polymer patch. The latter is significantly influenced by double electrical layers that are formed at the boundaries of the phases “metal-metal”, “metal-polymer”, “metal-semiconductor”, “semiconductor-semiconductor” and “metal-electrolyte”. When two electrically conducting phases come into contact with electrothermomechanical friction, a difference in electrical potentials arises, which is due to the formation of a double electric layer, that is an asymmetric distribution of charged particles near the phase boundary. The structure of the double electric layer does not matter for the magnitude of the reversible electrode potential, which is determined by the variation of the isobaric-isothermal potential of the corresponding electrochemical reaction.

Exploration and engineering of physical properties in high-quality Sr2CrReO6 epitaxial films

NASA Astrophysics Data System (ADS)

Lucy, Jeremy Matthew

Double perovskites have proven to be highly interesting materials, particularly in the past two decades, with many materials in this family exhibiting strong correlations. These materials are some of many novel complex oxides with potential spintronics application. Sr2CrReO6, in particular, is a double perovskite with one of the highest Curie temperatures of its class (> 620 K in bulk and ~510-600 K in thin films), as well as high spin polarization, ferrimagnetic behavior, and semiconducting properties. This dissertation covers recent work in exploring and tuning physical properties in epitaxial films of Sr2CrReO6. It starts by providing a background for the field of spintronics and double perovskites, bulk and thin film synthesis of Sr2CrReO6, and standard and specialized characterization techniques utilized in both university and national laboratories, and then provides reports of work on Sr2CrReO6 epitaxial films. Examples of exploration and engineering of properties of Sr2CrReO 6 include: (1) tuning of electrical resistivity, such as at T= 7 K by a factor of 18,000%, via control of oxygen partial pressure during film growth; (2) enhancement of interfacial double perovskite ordering, demonstrated with high-angle annular dark-field scanning transmission electron microscopy, via the use of double perovskite buffer layer substrates; (3) measurement of magnetization suppression near film/substrate interfaces via polarized neutron reflectometry, which reveals a reduction of thickness (from 5.6 nm to 3.6 nm) of the magnetically suppressed interface region due to buffer layer enhancement; (4) strain tunability of atomic spin and orbital moments of Cr, Re, and O atoms probed with x-ray magnetic circular dichroism, which demonstrates ferrimagnetic behavior and reveals important magnetic contributions of the oxygen sites (~0.02 muB/site); (5) strain tunability of large magnetocrystalline anisotropy via applied epitaxial strain, revealing anisotropy fields of up to 10s of tesla; and (6) depth-resolved synchrotron x-ray studies of correlated magnetic and structural relaxation in a thick relaxing film. The utilized techniques and demonstrated results for Sr2CrReO6 will hopefully benefit researchers of complex oxide materials and perhaps stimulate further work on this and other related materials.

A multiscale model for charge inversion in electric double layers

NASA Astrophysics Data System (ADS)

Mashayak, S. Y.; Aluru, N. R.

2018-06-01

Charge inversion is a widely observed phenomenon. It is a result of the rich statistical mechanics of the molecular interactions between ions, solvent, and charged surfaces near electric double layers (EDLs). Electrostatic correlations between ions and hydration interactions between ions and water molecules play a dominant role in determining the distribution of ions in EDLs. Due to highly polar nature of water, near a surface, an inhomogeneous and anisotropic arrangement of water molecules gives rise to pronounced variations in the electrostatic and hydration energies of ions. Classical continuum theories fail to accurately describe electrostatic correlations and molecular effects of water in EDLs. In this work, we present an empirical potential based quasi-continuum theory (EQT) to accurately predict the molecular-level properties of aqueous electrolytes. In EQT, we employ rigorous statistical mechanics tools to incorporate interatomic interactions, long-range electrostatics, correlations, and orientation polarization effects at a continuum-level. Explicit consideration of atomic interactions of water molecules is both theoretically and numerically challenging. We develop a systematic coarse-graining approach to coarse-grain interactions of water molecules and electrolyte ions from a high-resolution atomistic scale to the continuum scale. To demonstrate the ability of EQT to incorporate the water orientation polarization, ion hydration, and electrostatic correlations effects, we simulate confined KCl aqueous electrolyte and show that EQT can accurately predict the distribution of ions in a thin EDL and also predict the complex phenomenon of charge inversion.

Toward low friction in water for Mo2N/Ag coatings by tailoring the wettability

NASA Astrophysics Data System (ADS)

Dai, Xuan; Wen, Mao; Huang, Keke; Wang, Xin; Yang, Lina; Wang, Jia; Zhang, Kan

2018-07-01

Increasing demands for robust surfaces in harsh conditions, such as erosion, abrasion and sea-water, has stimulated the development of self-lubricated protective coatings. Meanwhile, due to the oil crisis, research in water lubrication again attracts much attention from both academics and practical engineers. Here, a higher hydrophilicity accompanying with a remarkable drop of friction coefficient in water environment was achieved successfully in Mo2N/Ag coatings by increasing Ag content. To do these, the Mo2N/Ag coatings with different Ag content were deposited by co-sputtering, which exhibit a nanocomposite structure consisting of precipitate Ag embedded in the Mo2N matrix. The high hydrophilicity can be ascribed to the combined contributions of the partial oxidation of Mo2N and high polarity of Ag precipitates. The decrease of friction coefficient is illustrated by the colloidal friction products and a mode with electric double layer. In which, enhanced hydrophilicity will result in forming a thin "water film" layer between the interface of counterpart and the coatings. And the MoOx/Ag2Mo4O13 derived from the hydrolysis action of Mo2N/Ag sliding in water could function as lubricant phase. Meanwhile, these negative charged MoOx/Ag2Mo4O13 colloidal particles induce the rearrangement of positive ions in the "water film" and form an electric double layer, which also contributes to the decrease of friction coefficient.

Single-jet gas cooling of in-beam foils or specimens: Prediction of the convective heat-transfer coefficient

NASA Astrophysics Data System (ADS)

Steyn, Gideon; Vermeulen, Christiaan

2018-05-01

An experiment was designed to study the effect of the jet direction on convective heat-transfer coefficients in single-jet gas cooling of a small heated surface, such as typically induced by an accelerated ion beam on a thin foil or specimen. The hot spot was provided using a small electrically heated plate. Heat-transfer calculations were performed using simple empirical methods based on dimensional analysis as well as by means of an advanced computational fluid dynamics (CFD) code. The results provide an explanation for the observed turbulent cooling of a double-foil, Havar beam window with fast-flowing helium, located on a target station for radionuclide production with a 66 MeV proton beam at a cyclotron facility.

A manufacturable process integration approach for graphene devices

NASA Astrophysics Data System (ADS)

Vaziri, Sam; Lupina, Grzegorz; Paussa, Alan; Smith, Anderson D.; Henkel, Christoph; Lippert, Gunther; Dabrowski, Jarek; Mehr, Wolfgang; Östling, Mikael; Lemme, Max C.

2013-06-01

In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.

Mechanical and Electrical Performance of Thermally Stable Au-ZnO films

DOE PAGES

Schoeppner, Rachel L.; Goeke, Ronald S.; Moody, Neville R.; ...

2015-03-28

The mechanical properties, thermal stability, and electrical performance of Au–ZnO composite thin films are determined in this work. The co-deposition of ZnO with Au via physical vapor deposition leads to grain refinement over that of pure Au; the addition of 0.1 vol.% ZnO reduces the as-grown grain size by over 30%. The hardness of the as-grown films doubles with 2% ZnO, from 1.8 to 3.6 GPa as measured by nanoindentation. Films with ZnO additions greater than 0.5% show no significant grain growth after annealing at 350 °C, while pure gold and smaller additions do exhibit grain growth and subsequent mechanicalmore » softening. Films with 1% and 2% ZnO show a decrease of approximately 50% in electrical resistivity and no change in hardness after annealing. A model accounting for both changes in the interface structure between dispersed ZnO particles and the Au matrix captures the changes in mechanical and electrical resistivity. Furthermore, the addition of 1–2% ZnO co-deposited with Au provides a method to create mechanically hard and thermally stable films with a resistivity less than 80 nΩ-m. Our results complement previous studies of other alloying systems, suggesting oxide dispersion strengthened (ODS) gold shows a desirable hardness–resistivity relationship that is relatively independent of the particular ODS chemistry.« less

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

PubMed

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Evaluation of double-layer density modulated Si thin films as Li-ion battery anodes

NASA Astrophysics Data System (ADS)

Taha Demirkan, Muhammed; Yurukcu, Mesut; Dursun, Burcu; Demir-Cakan, Rezan; Karabacak, Tansel

2017-10-01

Double-layer density modulated silicon thin films which contain alternating low and high density Si film layers were fabricated by magnetron sputtering. Two different samples consisting of alternating layers of high-density/low-density and low-density/high-density Si thin film layers were investigated as anode electrodes in Li-ion batteries. Si thin film in which the terminating layer at the top is low density Si layer-quoted as low-density/high-density film (LD/HD)- exhibits better performance than Si thin film that has high density layer at the top, -quoted as high-density/low-density (HD/LD). A highly stabilized cycling performance with the specific charge capacities of 2000 mAh g-1 at the 150th cycle at C/2 current density, and 1200 mAh g-1 at the 240th cycle at 10 C current density were observed for the LD/HD Si anode in the presence of fluoroethylene carbonate (FEC) electrolyte additive.

SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

NASA Astrophysics Data System (ADS)

Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

2016-05-01

The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

Facile Preparation of Highly Conductive Metal Oxides by Self-Combustion for Solution-Processed Thermoelectric Generators.

PubMed

Kang, Young Hun; Jang, Kwang-Suk; Lee, Changjin; Cho, Song Yun

2016-03-02

Highly conductive indium zinc oxide (IZO) thin films were successfully fabricated via a self-combustion reaction for application in solution-processed thermoelectric devices. Self-combustion efficiently facilitates the conversion of soluble precursors into metal oxides by lowering the required annealing temperature of oxide films, which leads to considerable enhancement of the electrical conductivity of IZO thin films. Such enhanced electrical conductivity induced by exothermic heat from a combustion reaction consequently yields high performance IZO thermoelectric films. In addition, the effect of the composition ratio of In to Zn precursors on the electrical and thermoelectric properties of the IZO thin films was investigated. IZO thin films with a composition ratio of In:Zn = 6:2 at the low annealing temperature of 350 °C showed an enhanced electrical conductivity, Seebeck coefficient, and power factor of 327 S cm(-1), 50.6 μV K(-1), and 83.8 μW m(-1) K(-2), respectively. Moreover, the IZO thin film prepared at an even lower temperature of 300 °C retained a large power factor of 78.7 μW m(-1) K(-2) with an electrical conductivity of 168 S cm(-1). Using the combustive IZO precursor, a thermoelectric generator consisting of 15 legs was fabricated by a printing process. The thermoelectric array generated a thermoelectric voltage of 4.95 mV at a low temperature difference (5 °C). We suggest that the highly conductive IZO thin films by self-combustion may be utilized for fabricating n-type flexible printed thermoelectric devices.

Electron Cooling and Isotropization during Magnetotail Current Sheet Thinning: Implications for Parallel Electric Fields

NASA Astrophysics Data System (ADS)

Lu, San; Artemyev, A. V.; Angelopoulos, V.

2017-11-01

Magnetotail current sheet thinning is a distinctive feature of substorm growth phase, during which magnetic energy is stored in the magnetospheric lobes. Investigation of charged particle dynamics in such thinning current sheets is believed to be important for understanding the substorm energy storage and the current sheet destabilization responsible for substorm expansion phase onset. We use Time History of Events and Macroscale Interactions during Substorms (THEMIS) B and C observations in 2008 and 2009 at 18 - 25 RE to show that during magnetotail current sheet thinning, the electron temperature decreases (cooling), and the parallel temperature decreases faster than the perpendicular temperature, leading to a decrease of the initially strong electron temperature anisotropy (isotropization). This isotropization cannot be explained by pure adiabatic cooling or by pitch angle scattering. We use test particle simulations to explore the mechanism responsible for the cooling and isotropization. We find that during the thinning, a fast decrease of a parallel electric field (directed toward the Earth) can speed up the electron parallel cooling, causing it to exceed the rate of perpendicular cooling, and thus lead to isotropization, consistent with observation. If the parallel electric field is too small or does not change fast enough, the electron parallel cooling is slower than the perpendicular cooling, so the parallel electron anisotropy grows, contrary to observation. The same isotropization can also be accomplished by an increasing parallel electric field directed toward the equatorial plane. Our study reveals the existence of a large-scale parallel electric field, which plays an important role in magnetotail particle dynamics during the current sheet thinning process.

The Effects of Strain on the Electrical Properties of Thin Evaporated Films of Semiconductor Compounds

ERIC Educational Resources Information Center

Steel, G. G.

1970-01-01

Reports on project intended to establish how electrical resistance, Hall voltage, and magnetoresistance change when a thin film specimen is subjected to mechanical strain. Found resistance of semiconducting film of indium arsenide and indium antimonide decreases with tension and increases with compression. (LS)

Flexible Solar Cells

NASA Technical Reports Server (NTRS)

1994-01-01

Solar cell "modules" are plastic strips coated with thin films of photovoltaic silicon that collect solar energy for instant conversion into electricity. Lasers divide the thin film coating into smaller cells to build up voltage. Developed by Iowa Thin Film Technologies under NASA and DOE grants, the modules are used as electrical supply for advertising displays, battery rechargers for recreational vehicles, and to power model airplanes. The company is planning other applications both in consumer goods and as a power source in underdeveloped countries.

Metal Doped Manganese Oxide Thin Films for Supercapacitor Application.

PubMed

Tung, Mai Thanh; Thuy, Hoang Thi Bich; Hang, Le Thi Thu

2015-09-01

Co and Fe doped manganese oxide thin films were prepared by anodic deposition at current density of 50 mA cm(-2) using the electrolyte containing manganese sulfate and either cobalt sulfate or ferrous sulfate. Surface morphology and crystal structure of oxides were studied by scanning electron microscope (SEM) and X-ray diffraction (XRD). Chemical composition of materials was analyzed by X-ray energy dispersive spectroscope (EDS), iodometric titration method and complexometric titration method, respectively. Supercapacitive behavior of Co and Fe doped manganese oxide films were characterized by cyclic voltammetry (CV) and impedance spectroscopy (EIS). The results show that the doped manganese oxides are composed of nano fiber-like structure with radius of 5-20 nm and remain amorphous structure after heat treatment at 100 degrees C for 2 hours. The average valence of manganese increases from +3.808 to +3.867 after doping Co and from +3.808 to +3.846 after doping Fe. The doped manganese oxide film electrodes exhibited preferably ideal pseudo-capacitive behavior. The specific capacitance value of deposited manganese oxide reaches a maximum of 175.3 F/g for doping Co and 244.6 F/g for doping Fe. The thin films retained about 84% of the initial capacity even after 500 cycles of charge-discharge test. Doping Co and Fe decreases diffusion and charge transfer resistance of the films. The electric double layer capacitance and capacitor response frequency are increased after doping.

Final Technical Report: Electrohydrodynamic Tip Streaming

DOE Office of Scientific and Technical Information (OSTI.GOV)

Basaran, Osman

2016-01-06

When subjected to strong electric fields, liquid drops and films form conical tips and emit thin jets from their tips. Such electrodydrodynamic (EDH) tip streaming or cone-jetting phenomena, which are sometimes referred to as electrospraying, occur widely in nature, e.g., in ejection of streams of small charged drops from pointed tips of raindrops in thunderclouds, and technology, e.g., in electrospray mass spectrometry or electric field-driven solvent extraction. More recently, EHD cone-jetting has emerged as a powerful technique for direct printing of solar cells, micro- and nano- particle production, and microencapsulation for controlled release. In many of the aforementioned situations, ofmore » equal importance to the processes by which one drop disintegrates to form several drops are those by which (a) two drops come together and coalesce and (b) two drops are coupled to form a double droplet system (DDS) or a capillary switch (CS). the main objective of this research program is to advance through simulation, theory, and experiment the breakup, coalescence, and oscillatory dynamics of single and pairs of charged as well as uncharged drops.« less

Antiferroelectric polarization switching and dynamic scaling of energy storage: A Monte Carlo simulation

NASA Astrophysics Data System (ADS)

Huang, B. Y.; Lu, Z. X.; Zhang, Y.; Xie, Y. L.; Zeng, M.; Yan, Z. B.; Liu, J.-M.

2016-05-01

The polarization-electric field hysteresis loops and the dynamics of polarization switching in a two-dimensional antiferroelectric (AFE) lattice submitted to a time-oscillating electric field E(t) of frequency f and amplitude E0, is investigated using Monte Carlo simulation based on the Landau-Devonshire phenomenological theory on antiferroelectrics. It is revealed that the AFE double-loop hysteresis area A, i.e., the energy loss in one cycle of polarization switching, exhibits the single-peak frequency dispersion A(f), suggesting the unique characteristic time for polarization switching, which is independent of E0 as long as E0 is larger than the quasi-static coercive field for the antiferroelectric-ferroelectric transitions. However, the dependence of recoverable stored energy W on amplitude E0 seems to be complicated depending on temperature T and frequency f. A dynamic scaling behavior of the energy loss dispersion A(f) over a wide range of E0 is obtained, confirming the unique characteristic time for polarization switching of an AFE lattice. The present simulation may shed light on the dynamics of energy storage and release in AFE thin films.

Modulation of resistive switching characteristics for individual BaTiO3 microfiber by surface oxygen vacancies

NASA Astrophysics Data System (ADS)

Miao, Zhilei; Chen, Lei; Zhou, Fang; Wang, Qiang

2018-01-01

Different from traditional thin-film BaTiO3 (BTO) RRAM device with planar structure, individual microfiber-shaped RRAM device, showing promising application potentials in the micro-sized non-volatile memory system, has not been investigated so far to demonstrate resistive switching behavior. In this work, individual sol-gel BTO microfiber has been formed using the draw-bench method, followed by annealing in different atmospheres of air and argon, respectively. The resistive switching characteristics of the individual BTO microfiber have been investigated by employing double-probe SEM measurement system, which shows great convenience to test local electrical properties by modulating the contact sites between the W probes and the BTO microfiber. For the sample annealed in air, the average resistive ON/OFF ratio is as high as 108, enhanced about four orders in comparison with the counterpart that annealed in Argon. For the sample annealed in argon ambience, the weakened resistive ON/OFF ratio can be attributed to the increased presence of oxygen vacancies in the surface of BTO fibers, and the underlying electrical conduction mechanisms are also discussed.

Dielectrophoretic trapping of DNA-coated gold nanoparticles on silicon based vertical nanogap devices.

PubMed

Strobel, Sebastian; Sperling, Ralph A; Fenk, Bernhard; Parak, Wolfgang J; Tornow, Marc

2011-06-07

We report on the successful dielectrophoretic trapping and electrical characterization of DNA-coated gold nanoparticles on vertical nanogap devices (VNDs). The nanogap devices with an electrode distance of 13 nm were fabricated from Silicon-on-Insulator (SOI) material using a combination of anisotropic reactive ion etching (RIE), selective wet chemical etching and metal thin-film deposition. Au nanoparticles (diameter 40 nm) coated with a monolayer of dithiolated 8 base pairs double stranded DNA were dielectrophoretically trapped into the nanogap from electrolyte buffer solution at MHz frequencies as verified by scanning and transmission electron microscopy (SEM/TEM) analysis. First electrical transport measurements through the formed DNA-Au-DNA junctions partially revealed an approximately linear current-voltage characteristic with resistance in the range of 2-4 GΩ when measured in solution. Our findings point to the importance of strong covalent bonding to the electrodes in order to observe DNA conductance, both in solution and in the dry state. We propose our setup for novel applications in biosensing, addressing the direct interaction of biomolecular species with DNA in aqueous electrolyte media.

Gate-Tuned Thermoelectric Power in Black Phosphorus.

PubMed

Saito, Yu; Iizuka, Takahiko; Koretsune, Takashi; Arita, Ryotaro; Shimizu, Sunao; Iwasa, Yoshihiro

2016-08-10

The electric field effect is a useful means of elucidating intrinsic material properties as well as for designing functional devices. The electric-double-layer transistor (EDLT) enables the control of carrier density in a wide range, which is recently proved to be an effective tool for the investigation of thermoelectric properties. Here, we report the gate-tuning of thermoelectric power in a black phosphorus (BP) single crystal flake with the thickness of 40 nm. Using an EDLT configuration, we successfully control the thermoelectric power (S) and find that the S of ion-gated BP reached +510 μV/K at 210 K in the hole depleted state, which is much higher than the reported bulk single crystal value of +340 μV/K at 300 K. We compared this experimental data with the first-principles-based calculation and found that this enhancement is qualitatively explained by the effective thinning of the conduction channel of the BP flake and nonuniformity of the channel owing to the gate operation in a depletion mode. Our results provide new opportunities for further engineering BP as a thermoelectric material in nanoscale.

Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balagula, R. M.; Vinnichenko, M. Ya.; Makhov, I. S.

2017-03-15

The modulation of polarized radiation by GaAs/AlGaAs structures with tunnel-coupled double quantum wells in a strong lateral electric field is studied. The spectra of the variation in the refractive index under a lateral electric field in the vicinity of the intersubband resonance are experimentally investigated.

Joint Services Electronics Program. Annual Report (16th). Appendix

DTIC Science & Technology

1993-10-01

Lee and R.J. Burkholder, "A Three-Dimensional Implementation of the Hybrid Ray-FDTD Method for Modeling Electromagnetic Scattering from Electrically ...thin material-coated metallic surfaces. Each of the It is noted that expressions for the constants A1 electrically thin material coatings is modeled by...ElectroSdiece Laboratory Department of Electrical Engineering Columbus, Ohio 43212I ODTIC.. . •L•ELECTIE 1 Annual Report Appendix 721563-6 JAN I At ,94

A Simple Visualization of Double Bond Properties: Chemical Reactivity and UV Fluorescence

ERIC Educational Resources Information Center

Grayson, Scott M.

2012-01-01

A simple, easily visualized thin-layer chromatography (TLC) staining experiment is presented that highlights the difference in reactivity between aromatic double bonds and nonaromatic double bonds. Although the stability of aromatic systems is a major theme in organic chemistry, the concept is rarely reinforced "visually" in the undergraduate…

A comparative study of heterostructured CuO/CuWO4 nanowires and thin films

NASA Astrophysics Data System (ADS)

Polyakov, Boris; Kuzmin, Alexei; Vlassov, Sergei; Butanovs, Edgars; Zideluns, Janis; Butikova, Jelena; Kalendarev, Robert; Zubkins, Martins

2017-12-01

A comparative study of heterostructured CuO/CuWO4 core/shell nanowires and double-layer thin films was performed through X-ray diffraction, confocal micro-Raman spectroscopy and electron (SEM and TEM) microscopies. The heterostructures were produced using a two-step process, starting from a deposition of amorphous WO3 layer on top of CuO nanowires and thin films by reactive DC magnetron sputtering and followed by annealing at 650 °C in air. The second step induced a solid-state reaction between CuO and WO3 oxides through a thermal diffusion process, revealed by SEM-EDX analysis. Morphology evolution of core/shell nanowires and double-layer thin films upon heating was studied by electron (SEM and TEM) microscopies. A formation of CuWO4 phase was confirmed by X-ray diffraction and confocal micro-Raman spectroscopy.

The Spin-Plane Double Probe Electric Field Instrument for MMS

NASA Astrophysics Data System (ADS)

Lindqvist, P.-A.; Olsson, G.; Torbert, R. B.; King, B.; Granoff, M.; Rau, D.; Needell, G.; Turco, S.; Dors, I.; Beckman, P.; Macri, J.; Frost, C.; Salwen, J.; Eriksson, A.; Åhlén, L.; Khotyaintsev, Y. V.; Porter, J.; Lappalainen, K.; Ergun, R. E.; Wermeer, W.; Tucker, S.

2016-03-01

The Spin-plane double probe instrument (SDP) is part of the FIELDS instrument suite of the Magnetospheric Multiscale mission (MMS). Together with the Axial double probe instrument (ADP) and the Electron Drift Instrument (EDI), SDP will measure the 3-D electric field with an accuracy of 0.5 mV/m over the frequency range from DC to 100 kHz. SDP consists of 4 biased spherical probes extended on 60 m long wire booms 90∘ apart in the spin plane, giving a 120 m baseline for each of the two spin-plane electric field components. The mechanical and electrical design of SDP is described, together with results from ground tests and calibration of the instrument.

Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer.

PubMed

Zhang, Zhaojing; Yao, Liyong; Zhang, Yi; Ao, Jianping; Bi, Jinlian; Gao, Shoushuai; Gao, Qing; Jeng, Ming-Jer; Sun, Guozhong; Zhou, Zhiqiang; He, Qing; Sun, Yun

2018-02-01

Double layer distribution exists in Cu 2 SnZnSe 4 (CZTSe) thin films prepared by selenizing the metallic precursors, which will degrade the back contact of Mo substrate to absorber layer and thus suppressing the performance of solar cell. In this work, the double-layer distribution of CZTSe film is eliminated entirely and the formation of MoSe 2 interfacial layer is inhibited successfully. CZTSe film is prepared by selenizing the precursor deposited by electrodeposition method under Se and SnSe x mixed atmosphere. It is found that the insufficient reaction between ZnSe and Cu-Sn-Se phases in the bottom of the film is the reason why the double layer distribution of CZTSe film is formed. By increasing Sn content in the metallic precursor, thus making up the loss of Sn because of the decomposition of CZTSe and facilitate the diffusion of liquid Cu 2 Se, the double layer distribution is eliminated entirely. The crystallization of the formed thin film is dense and the grains go through the entire film without voids. And there is no obvious MoSe 2 layer formed between CZTSe and Mo. As a consequence, the series resistance of the solar cell reduces significantly to 0.14 Ω cm 2 and a CZTSe solar cell with efficiency of 7.2% is fabricated.

Specular Andreev reflection in thin films of topological insulators

NASA Astrophysics Data System (ADS)

Majidi, Leyla; Asgari, Reza

2016-05-01

We theoretically reveal the possibility of specular Andreev reflection in a thin film topological insulator normal-superconductor (N/S) junction in the presence of a gate electric field. The probability of specular Andreev reflection increases with the electric field, and electron-hole conversion with unit efficiency happens in a wide experimentally accessible range of the electric field. We show that perfect specular Andreev reflection can occur for all angles of incidence with a particular excitation energy value. In addition, we find that the thermal conductance of the structure displays exponential dependence on the temperature. Our results reveal the potential of the proposed topological insulator thin-film-based N/S structure for the realization of intraband specular Andreev reflection.

Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Sarath Kumar, S. R.; Abutaha, Anas I.; Hedhili, M. N.; Alshareef, H. N.

2012-01-01

The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258-133 S cm-1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8-3.2 me), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

Microwave-assisted synthesis of metal oxide/hydroxide composite electrodes for high power supercapacitors - A review

NASA Astrophysics Data System (ADS)

Faraji, Soheila; Ani, Farid Nasir

2014-10-01

Electrochemical capacitors (ECs), also known as pseudocapacitors or supercapacitors (SCs), is receiving great attention for its potential applications in electric and hybrid electric vehicles because of their ability to store energy, alongside with the advantage of delivering the stored energy much more rapidly than batteries, namely power density. To become primary devices for power supply, supercapacitors must be developed further to improve their ability to deliver high energy and power simultaneously. In this concern, a lot of effort is devoted to the investigation of pseudocapacitive transition-metal-based oxides/hydroxides such as ruthenium oxide, manganese oxide, cobalt oxide, nickel oxide, cobalt hydroxide, nickel hydroxide, and mixed metal oxides/hydroxides such as nickel cobaltite and nickel-cobalt oxy-hydroxides. This is mainly due to the fact that they can produce much higher specific capacitances than typical carbon-based electric double-layer capacitors and electronically conducting polymers. This review presents supercapacitor performance data of metal oxide thin film electrodes by microwave-assisted as an inexpensive, quick and versatile technique. Supercapacitors have established the specific capacitance (Cs) principles, therefore, it is likely that metal oxide films will continue to play a major role in supercapacitor technology and are expected to considerably increase the capabilities of these devices in near future.

Pulsed laser deposition of functionalized Mg-Al layered double hydroxide thin films

NASA Astrophysics Data System (ADS)

Vlad, A.; Birjega, R.; Tirca, I.; Matei, A.; Mardare, C. C.; Hassel, A. W.; Nedelcea, A.; Dinescu, M.; Zavoianu, R.

2018-02-01

In this paper, magnesium-aluminium layered double hydroxide (LDH) has been functionalized with sodium dodecyl sulfate (DS) and deposited as thin film by pulsed laser deposition (PLD). Mg, Al-LDH powders were prepared by co-precipitation and used as reference material. Intercalation of DS as an anionic surfactant into the LDHs host layers has been prepared in two ways: co-precipitation (P) and reconstruction (R). DS intercalation occurred in LDH powder via both preparation methods. The films deposited via PLD, in particular at 532 and 1064 nm, preserve the organic intercalated layered structure of the targets prepared from these powders. The results reveal the ability of proposed deposition technique to produce functional composite organo-modified LDHs thin films.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2015-07-28

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

Structurally-driven Enhancement of Thermoelectric Properties within Poly(3,4-ethylenedioxythiophene) thin Films

PubMed Central

Petsagkourakis, Ioannis; Pavlopoulou, Eleni; Portale, Giuseppe; Kuropatwa, Bryan A.; Dilhaire, Stefan; Fleury, Guillaume; Hadziioannou, Georges

2016-01-01

Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. PEDOT:Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the PEDOT:Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 μW/mK2 has been readily obtained for PEDOT:Tos thin films following this methodology. PMID:27470637

Structurally-driven Enhancement of Thermoelectric Properties within Poly(3,4-ethylenedioxythiophene) thin Films.

PubMed

Petsagkourakis, Ioannis; Pavlopoulou, Eleni; Portale, Giuseppe; Kuropatwa, Bryan A; Dilhaire, Stefan; Fleury, Guillaume; Hadziioannou, Georges

2016-07-29

Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 μW/mK(2) has been readily obtained for Tos thin films following this methodology.

Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates

PubMed Central

Wang, Fang-Hsing; Chen, Kun-Neng; Hsu, Chao-Ming; Liu, Min-Chu; Yang, Cheng-Fu

2016-01-01

In this study, Ga2O3-doped ZnO (GZO) thin films were deposited on glass and flexible polyimide (PI) substrates at room temperature (300 K), 373 K, and 473 K by the radio frequency (RF) magnetron sputtering method. After finding the deposition rate, all the GZO thin films with a nano-scale thickness of about 150 ± 10 nm were controlled by the deposition time. X-ray diffraction patterns indicated that the GZO thin films were not amorphous and all exhibited the (002) peak, and field emission scanning electron microscopy showed that only nano-scale particles were observed. The dependences of the structural, electrical, and optical properties of the GZO thin films on different deposition temperatures and substrates were investigated. X-ray photoemission spectroscopy (XPS) was used to measure the elemental composition at the chemical and electronic states of the GZO thin films deposited on different substrates, which could be used to clarify the mechanism of difference in electrical properties of the GZO thin films. In this study, the XPS binding energy spectra of Ga2p3/2 and Ga2p1/2 peaks, Zn2p3/2 and Zn2p1/2 peaks, the Ga3d peak, and O1s peaks for GZO thin films on glass and PI substrates were well compared. PMID:28335216

Micro-machined thin film hydrogen gas sensor, and method of making and using the same

NASA Technical Reports Server (NTRS)

DiMeo, Jr., Frank (Inventor); Bhandari, Gautam (Inventor)

2001-01-01

A hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a microhotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

Structural and electrical characteristics of gallium tin oxide thin films prepared by electron cyclotron resonance-metal organic chemical vapor deposition.

PubMed

Park, Ji Hun; Byun, Dongjin; Lee, Joong Kee

2011-08-01

Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nanopolycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 x 10(-3) ohms cm. In our experimental range, the optimized carrier concentration of 3.71 x 10(18) cm(-3) was prepared at the Ga/[O+Sn] mole ratio of 0.35.

Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si

NASA Astrophysics Data System (ADS)

Ali, Ahmad Hadi; Hassan, Zainuriah; Shuhaimi, Ahmad

2018-06-01

This paper reports on the enhancement of optical transmittance and electrical resistivity of indium tin oxide (ITO) transparent conductive oxides (TCO) deposited by radio frequency (RF) sputtering on Si substrate. Post-annealing was conducted on the samples at temperature ranges of 500-700 °C. From X-ray diffraction analysis (XRD), ITO (2 2 2) peak was observed after post-annealing indicating crystallization phase of the films. From UV-vis measurements, the ITO thin film shows highest transmittance of more than 90% at post-annealing temperature of 700 °C as compared to the as-deposited thin films. From atomic force microscope (AFM), the surface roughness becomes smoother after post-annealing as compared to the as-deposited. The lowest electrical resistivity for ITO sample is 6.68 × 10-4 Ω cm after post-annealed at 700 °C that are contributed by high carrier concentration and mobility. The improved structural and surface morphological characteristics helps in increasing the optical transmittance and reducing the electrical resistivity of the ITO thin films.

Novel Electrically Tunable Microwave Solenoid Inductor and Compact Phase Shifter Utilizing Permaloy and PZT Thin Films

DOE PAGES

Wang, Tengxing; Jiang, Wei; Divan, Ralu; ...

2017-08-03

A Permalloy (Py) thin film enabled tunable 3-D solenoid inductor is designed and fabricated. The special configuration of magnetic core is discussed and by selectively patterning Py thin film, the proposed tunable inductor can work at frequency up to several GHz range. The inductance of the solenoid inductor can be electrically tuned by dc current and the tunability is above 10%. Utilizing the implemented Py enabled tunable solenoid inductor and Lead Zirconate Titanate (PZT) thin film enabled metal-insulator-metal (MIM) capacitor, a compact fully electrically tunable lumped elements phase shifter is achieved. The tunable phase shifter has both inductive and capacitivemore » tunability and the dual tunability significantly improves the tuning range and design flexibility. Moreover, the dual tunability is able to retain the equivalent characteristic impedance of the device in the process of the phase being tuned. Here, the phase of the device can be tuned by fully electrical methods and when dc current and dc voltage are provided, the length normalized phase tunability is up to 210°/cm« less

Electrical Nanocontact Between Bismuth Nanowire Edges and Electrodes

NASA Astrophysics Data System (ADS)

Murata, Masayuki; Nakamura, Daiki; Hasegawa, Yasuhiro; Komine, Takashi; Uematsu, Daisuke; Nakamura, Shinichiro; Taguchi, Takashi

2010-09-01

Three methods for attaching electrodes to a bismuth nanowire sample were investigated. In the first and second methods, thin layers of titanium and copper were deposited by ion plating under vacuum onto the edge surface of individual bismuth nanowire samples that were encapsulated in a quartz template. Good electrical contact between the electrodes and the nanowire was achieved using silver epoxy and conventional solder on the thin-film layers in the first and second methods, respectively. In the third method, a low-melting-point solder was utilized and was also successful in achieving good electrical contact in air atmosphere. The connection methods showed no difference in terms of resistivity temperature dependence or Seebeck coefficient. The third method has an advantage in that nanocontact is easily achieved; however, diffusion of the solder into the nanowire allows contamination near the melting point of the solder. In the first and second methods, the thin-film layer enabled electrical contact to be more safely achieved than the direct contact used in the third method, because the thin-film layer prevented diffusion of binder components.

Graphene-silica composite thin films as transparent conductors.

PubMed

Watcharotone, Supinda; Dikin, Dmitriy A; Stankovich, Sasha; Piner, Richard; Jung, Inhwa; Dommett, Geoffrey H B; Evmenenko, Guennadi; Wu, Shang-En; Chen, Shu-Fang; Liu, Chuan-Pu; Nguyen, SonBinh T; Ruoff, Rodney S

2007-07-01

Transparent and electrically conductive composite silica films were fabricated on glass and hydrophilic SiOx/silicon substrates by incorporation of individual graphene oxide sheets into silica sols followed by spin-coating, chemical reduction, and thermal curing. The resulting films were characterized by SEM, AFM, TEM, low-angle X-ray reflectivity, XPS, UV-vis spectroscopy, and electrical conductivity measurements. The electrical conductivity of the films compared favorably to those of composite thin films of carbon nanotubes in silica.

Graphene-silica Composite Thin Films as Transparent Conductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Watcharotone,S.; Dikin, D.; Stankovich, S.

2007-01-01

Transparent and electrically conductive composite silica films were fabricated on glass and hydrophilic SiO{sub x}/silicon substrates by incorporation of individual graphene oxide sheets into silica sols followed by spin-coating, chemical reduction, and thermal curing. The resulting films were characterized by SEM, AFM, TEM, low-angle X-ray reflectivity, XPS, UV-vis spectroscopy, and electrical conductivity measurements. The electrical conductivity of the films compared favorably to those of composite thin films of carbon nanotubes in silica.

Integrating Nano-patterned Ferromagnetic and Ferroelectric Thin Films for Electrically Tunable RF Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Tengxing; Peng, Yujia; Jiang, Wei

Tunable radio frequency (RF) components are pivotal elements in frequency-agile and multifunctional systems. However, there is a technical barrier to achieve miniaturized fully electrically tunable RF components. This paper provides and demonstrates the efficacy of a first unique design methodology in developing fully electrically tunable RF components by integrating ferromagnetic (e.g., Permalloy) and ferroelectric (e.g., Lead Zirconate Titanate: PZT) thin films patterns. Permalloy thin film has been patterned in nanometer scale to improve its ferromagnetic resonance frequency (FMR) for RF applications. Tunable inductors are developed with the utilization of different thickness of Permalloy thin film, which show over 50% incrementmore » in inductance and over 4% in tunability with DC current. More tunability can be achieved with multiple layers of Permalloy thin film and optimized thickness. A fully electrically tunable slow wave RF transmission line with simultaneously variable inductance and capacitance density has been implemented and thoroughly investigated for the first time. Measured results show that a fixed phase shift of 90° can be achieved from 1.5 GHz to 1.85 GHz continuously by applying external DC current from 0 to 200 mA and external DC voltage from 0 to 15 Volts, respectively.« less

Integrating Nano-patterned Ferromagnetic and Ferroelectric Thin Films for Electrically Tunable RF Applications

DOE PAGES

Wang, Tengxing; Peng, Yujia; Jiang, Wei; ...

2016-10-31

Tunable radio frequency (RF) components are pivotal elements in frequency-agile and multifunctional systems. However, there is a technical barrier to achieve miniaturized fully electrically tunable RF components. This paper provides and demonstrates the efficacy of a first unique design methodology in developing fully electrically tunable RF components by integrating ferromagnetic (e.g., Permalloy) and ferroelectric (e.g., Lead Zirconate Titanate: PZT) thin films patterns. Permalloy thin film has been patterned in nanometer scale to improve its ferromagnetic resonance frequency (FMR) for RF applications. Tunable inductors are developed with the utilization of different thickness of Permalloy thin film, which show over 50% incrementmore » in inductance and over 4% in tunability with DC current. More tunability can be achieved with multiple layers of Permalloy thin film and optimized thickness. A fully electrically tunable slow wave RF transmission line with simultaneously variable inductance and capacitance density has been implemented and thoroughly investigated for the first time. Measured results show that a fixed phase shift of 90° can be achieved from 1.5 GHz to 1.85 GHz continuously by applying external DC current from 0 to 200 mA and external DC voltage from 0 to 15 Volts, respectively.« less

Enhanced magnetoelectric coupling in a composite multiferroic system via interposing a thin film polymer

NASA Astrophysics Data System (ADS)

Xiao, Zhuyun; Mohanchandra, Kotekar P.; Lo Conte, Roberto; Ty Karaba, C.; Schneider, J. D.; Chavez, Andres; Tiwari, Sidhant; Sohn, Hyunmin; Nowakowski, Mark E.; Scholl, Andreas; Tolbert, Sarah H.; Bokor, Jeffrey; Carman, Gregory P.; Candler, Rob N.

2018-05-01

Enhancing the magnetoelectric coupling in a strain-mediated multiferroic composite structure plays a vital role in controlling magnetism by electric fields. An enhancement of magnetoelastic coupling between ferroelectric single crystal (011)-cut [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈ 0.30) and ferromagnetic polycrystalline Ni thin film through an interposed benzocyclobutene polymer thin film is reported. A nearly twofold increase in sensitivity of remanent magnetization in the Ni thin film to an applied electric field is observed. This observation suggests a viable method of improving the magnetoelectric response in these composite multiferroic systems.

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

NASA Astrophysics Data System (ADS)

Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

2012-09-01

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors.

PubMed

Yao, Kui; Chen, Shuting; Rahimabady, Mojtaba; Mirshekarloo, Meysam Sharifzadeh; Yu, Shuhui; Tay, Francis Eng Hock; Sritharan, Thirumany; Lu, Li

2011-09-01

Although batteries possess high energy storage density, their output power is limited by the slow movement of charge carriers, and thus capacitors are often required to deliver high power output. Dielectric capacitors have high power density with fast discharge rate, but their energy density is typically much lower than electrochemical supercapacitors. Increasing the energy density of dielectric materials is highly desired to extend their applications in many emerging power system applications. In this paper, we review the mechanisms and major characteristics of electric energy storage with electrochemical supercapacitors and dielectric capacitors. Three types of in-house-produced ferroic nonlinear dielectric thin film materials with high energy density are described, including (Pb(0.97)La(0.02))(Zr(0.90)Sn(0.05)Ti(0.05))O(3) (PLZST) antiferroelectric ceramic thin films, Pb(Zn(1/3)Nb(2/3))O(3-)Pb(Mg(1/3)Nb(2/3))O(3-)PbTiO(3) (PZN-PMN-PT) relaxor ferroelectric ceramic thin films, and poly(vinylidene fluoride) (PVDF)-based polymer blend thin films. The results showed that these thin film materials are promising for electric storage with outstandingly high power density and fairly high energy density, comparable with electrochemical supercapacitors.

Theory of the formation of the electric double layer at the ion exchange membrane-solution interface.

PubMed

Moya, A A

2015-02-21

This work aims to extend the study of the formation of the electric double layer at the interface defined by a solution and an ion-exchange membrane on the basis of the Nernst-Planck and Poisson equations, including different values of the counter-ion diffusion coefficient and the dielectric constant in the solution and membrane phases. The network simulation method is used to obtain the time evolution of the electric potential, the displacement electric vector, the electric charge density and the ionic concentrations at the interface between a binary electrolyte solution and a cation-exchange membrane with total co-ion exclusion. The numerical results for the temporal evolution of the interfacial electric potential and the surface electric charge are compared with analytical solutions derived in the limit of the shortest times by considering the Poisson equation for a simple cationic diffusion process. The steady-state results are justified from the Gouy-Chapman theory for the diffuse double layer in the limits of similar and high bathing ionic concentrations with respect to the fixed-charge concentration inside the membrane. Interesting new physical insights arise from the interpretation of the process of the formation of the electric double layer at the ion exchange membrane-solution interface on the basis of a membrane model with total co-ion exclusion.

Nonlinear dynamics of capacitive charging and desalination by porous electrodes.

PubMed

Biesheuvel, P M; Bazant, M Z

2010-03-01

The rapid and efficient exchange of ions between porous electrodes and aqueous solutions is important in many applications, such as electrical energy storage by supercapacitors, water desalination and purification by capacitive deionization, and capacitive extraction of renewable energy from a salinity difference. Here, we present a unified mean-field theory for capacitive charging and desalination by ideally polarizable porous electrodes (without Faradaic reactions or specific adsorption of ions) valid in the limit of thin double layers (compared to typical pore dimensions). We illustrate the theory for the case of a dilute, symmetric, binary electrolyte using the Gouy-Chapman-Stern (GCS) model of the double layer, for which simple formulae are available for salt adsorption and capacitive charging of the diffuse part of the double layer. We solve the full GCS mean-field theory numerically for realistic parameters in capacitive deionization, and we derive reduced models for two limiting regimes with different time scales: (i) in the "supercapacitor regime" of small voltages and/or early times, the porous electrode acts like a transmission line, governed by a linear diffusion equation for the electrostatic potential, scaled to the RC time of a single pore, and (ii) in the "desalination regime" of large voltages and long times, the porous electrode slowly absorbs counterions, governed by coupled, nonlinear diffusion equations for the pore-averaged potential and salt concentration.

Nonlinear dynamics of capacitive charging and desalination by porous electrodes

NASA Astrophysics Data System (ADS)

Biesheuvel, P. M.; Bazant, M. Z.

2010-03-01

The rapid and efficient exchange of ions between porous electrodes and aqueous solutions is important in many applications, such as electrical energy storage by supercapacitors, water desalination and purification by capacitive deionization, and capacitive extraction of renewable energy from a salinity difference. Here, we present a unified mean-field theory for capacitive charging and desalination by ideally polarizable porous electrodes (without Faradaic reactions or specific adsorption of ions) valid in the limit of thin double layers (compared to typical pore dimensions). We illustrate the theory for the case of a dilute, symmetric, binary electrolyte using the Gouy-Chapman-Stern (GCS) model of the double layer, for which simple formulae are available for salt adsorption and capacitive charging of the diffuse part of the double layer. We solve the full GCS mean-field theory numerically for realistic parameters in capacitive deionization, and we derive reduced models for two limiting regimes with different time scales: (i) in the “supercapacitor regime” of small voltages and/or early times, the porous electrode acts like a transmission line, governed by a linear diffusion equation for the electrostatic potential, scaled to the RC time of a single pore, and (ii) in the “desalination regime” of large voltages and long times, the porous electrode slowly absorbs counterions, governed by coupled, nonlinear diffusion equations for the pore-averaged potential and salt concentration.

Aerodynamic Modeling of Oscillating Wing in Hypersonic Flow: a Numerical Study

NASA Astrophysics Data System (ADS)

Zhu, Jian; Hou, Ying-Yu; Ji, Chen; Liu, Zi-Qiang

2016-06-01

Various approximations to unsteady aerodynamics are examined for the unsteady aerodynamic force of a pitching thin double wedge airfoil in hypersonic flow. Results of piston theory, Van Dyke’s second-order theory, Newtonian impact theory, and CFD method are compared in the same motion and Mach number effects. The results indicate that, for this thin double wedge airfoil, Newtonian impact theory is not suitable for these Mach number, while piston theory and Van Dyke’s second-order theory are in good agreement with CFD method for Ma<7.

Scanning electrochemical microscopy of graphene/polymer hybrid thin films as supercapacitors: Physical-chemical interfacial processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Sanju, E-mail: sanju.gupta@wku.edu; Price, Carson

2015-10-15

Hybrid electrode comprising an electric double-layer capacitor of graphene nanosheets and a pseudocapacitor of the electrically conducting polymers namely, polyaniline; PAni and polypyrrole; PPy are constructed that exhibited synergistic effect with excellent electrochemical performance as thin film supercapacitors for alternative energy. The hybrid supercapacitors were prepared by layer-by-layer (LbL) assembly based on controlled electrochemical polymerization followed by reduction of graphene oxide electrochemically producing ErGO, for establishing intimate electronic contact through nanoscale architecture and chemical stability, producing a single bilayer of (PAni/ErGO){sub 1}, (PPy/ErGO){sub 1}, (PAni/GO){sub 1} and (PPy/GO){sub 1}. The rationale design is to create thin films that possess interconnectedmore » graphene nanosheets (GNS) with polymer nanostructures forming well-defined tailored interfaces allowing sufficient surface adsorption and faster ion transport due to short diffusion distances. We investigated their electrochemical properties and performance in terms of gravimetric specific capacitance, C{sub s}, from cyclic voltammograms. The LbL-assembled bilayer films exhibited an excellent C{sub s} of ≥350 F g{sup −1} as compared with constituents (∼70 F g{sup −1}) at discharge current density of 0.3 A g{sup −1} that outperformed many other hybrid supercapacitors. To gain deeper insights into the physical-chemical interfacial processes occurring at the electrode/electrolyte interface that govern their operation, we have used scanning electrochemical microscopy (SECM) technique in feedback and probe approach modes. We present our findings from viewpoint of reinforcing the role played by heterogeneous electrode surface composed of nanoscale graphene sheets (conducting) and conducting polymers (semiconducting) backbone with ordered polymer chains via higher/lower probe current distribution maps. Also targeted is SECM imaging that allowed to determine electrochemical (re)activity of surface ion adsorption sites density at solid/liquid interface.« less

Dissimilar Kinetic Behavior of Electrically Manipulated Single- and Double-Stranded DNA Tethered to a Gold Surface

PubMed Central

Rant, Ulrich; Arinaga, Kenji; Tornow, Marc; Kim, Yong Woon; Netz, Roland R.; Fujita, Shozo; Yokoyama, Naoki; Abstreiter, Gerhard

2006-01-01

We report on the electrical manipulation of single- and double-stranded oligodeoxynucleotides that are end tethered to gold surfaces in electrolyte solution. The response to alternating repulsive and attractive electric surface fields is studied by time-resolved fluorescence measurements, revealing markedly distinct dynamics for the flexible single-stranded and stiff double-stranded DNA, respectively. Hydrodynamic simulations rationalize this finding and disclose two different kinetic mechanisms: stiff polymers undergo rotation around the anchoring pivot point; flexible polymers, on the other hand, are pulled onto the attracting surface segment by segment. PMID:16473909

Dissimilar kinetic behavior of electrically manipulated single- and double-stranded DNA tethered to a gold surface.

PubMed

Rant, Ulrich; Arinaga, Kenji; Tornow, Marc; Kim, Yong Woon; Netz, Roland R; Fujita, Shozo; Yokoyama, Naoki; Abstreiter, Gerhard

2006-05-15

We report on the electrical manipulation of single- and double-stranded oligodeoxynucleotides that are end tethered to gold surfaces in electrolyte solution. The response to alternating repulsive and attractive electric surface fields is studied by time-resolved fluorescence measurements, revealing markedly distinct dynamics for the flexible single-stranded and stiff double-stranded DNA, respectively. Hydrodynamic simulations rationalize this finding and disclose two different kinetic mechanisms: stiff polymers undergo rotation around the anchoring pivot point; flexible polymers, on the other hand, are pulled onto the attracting surface segment by segment.

Thermoelectric Figures of Merit of Zn4Sb3 and Zrnisn-based Half-heusler Compounds Influenced by Mev Ion-beam Bombardments

NASA Astrophysics Data System (ADS)

Budak, S.; Guner, S.; Muntele, C. I.; Ila, D.

Semiconducting β-Zn4Sb3 and ZrNiSn-based half-Heusler compound thin films with applications as thermoelectric (TE) materials were prepared using ion beam assisted deposition (IBAD). High-purity solid zinc (Zn) and antimony (Sb) were evaporated by electron beam to grow the β-Zn4Sb3 thin film while high-purity zirconium (Zr) powder and nickel (Ni) tin (Sn) powders were evaporated by electron beam to grow the ZrNiSn-based half-Heusler compound thin film. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of the thin films. The grown thin films were subjected to 5 MeV Si ions bombardment for generation of nanostructures in the films. We measured the thermal conductivity, Seebeck coefficient, and electrical conductivity of these two systems before and after 5 MeV Si ions beam bombardment. The two material systems have been identified as promising TE materials for the application of thermal-to-electrical energy conversion, but the efficiency still limits their applications. The electronic energy deposited due to ionization in the track of MeV ion beam couldcause localized crystallization. The nanostructures produced by MeV ion beam can cause significant change in both the electrical and the thermal conductivity of thin films, thereby improving the efficiency. We used the 3ω-method (3rd harmonic) measurement system to measure the cross-plane thermal conductivity, the van der Pauw measurement system to measure the electrical conductivity, and the Seebeck-coefficient measurement system to measure the cross-plane Seebeck coefficient. The thermoelectric figures of merit of the two material systems were then derived by calculations using the measurement results. The MeV ion-beam bombardment was found to decrease the thermal conductivity of thin films and increase the efficiency of thermal-to-electrical energy conversion.

Characterization of the COD removal, electricity generation, and bacterial communities in microbial fuel cells treating molasses wastewater.

PubMed

Lee, Yun-Yeong; Kim, Tae G; Cho, Kyung-Suk

2016-11-09

The chemical oxygen demand (COD) removal, electricity generation, and microbial communities were compared in 3 types of microbial fuel cells (MFCs) treating molasses wastewater. Single-chamber MFCs without and with a proton exchange membrane (PEM), and double-chamber MFC were constructed. A total of 10,000 mg L(-1) COD of molasses wastewater was continuously fed. The COD removal, electricity generation, and microbial communities in the two types of single-chamber MFCs were similar, indicating that the PEM did not enhance the reactor performance. The COD removal in the single-chamber MFCs (89-90%) was higher than that in the double-chamber MFC (50%). However, electricity generation in the double-chamber MFC was higher than that in the single-chamber MFCs. The current density (80 mA m(-2)) and power density (17 mW m(-2)) in the double-chamber MFC were 1.4- and 2.2-times higher than those in the single-chamber MFCs, respectively. The bacterial community structures in single- and double-chamber MFCs were also distinguishable. The amount of Proteobacteria in the double-chamber MFC was 2-3 times higher than those in the single-chamber MFCs. For the archaeal community, Methanothrix (96.4%) was remarkably dominant in the single-chamber MFCs, but Methanobacterium (35.1%), Methanosarcina (28.3%), and Methanothrix (16.2%) were abundant in the double-chamber MFC.

Standard surface grinder for precision machining of thin-wall tubing

NASA Technical Reports Server (NTRS)

Jones, A.; Kotora, J., Jr.; Rein, J.; Smith, S. V.; Strack, D.; Stuckey, D.

1967-01-01

Standard surface grinder performs precision machining of thin-wall stainless steel tubing by electrical discharge grinding. A related adaptation, a traveling wire electrode fixture, is used for machining slots in thin-walled tubing.

Giant positive magnetoresistance in half-metallic double-perovskite Sr2CrWO6 thin films

PubMed Central

Zhang, Ji; Ji, Wei-Jing; Xu, Jie; Geng, Xiao-Yu; Zhou, Jian; Gu, Zheng-Bin; Yao, Shu-Hua; Zhang, Shan-Tao

2017-01-01

Magnetoresistance (MR) is the magnetic field–induced change of electrical resistance. The MR effect not only has wide applications in hard drivers and sensors but also is a long-standing scientific issue for complex interactions. Ferromagnetic/ferrimagnetic oxides generally show negative MR due to the magnetic field–induced spin order. We report the unusually giant positive MR up to 17,200% (at 2 K and 7 T) in 12-nm Sr2CrWO6 thin films, which show metallic behavior with high carrier density of up to 2.26 × 1028 m−3 and high mobility of 5.66 × 104 cm2 V−1 s−1. The possible mechanism is that the external magnetic field suppresses the long-range antiferromagnetic order to form short-range antiferromagnetic fluctuations, which enhance electronic scattering and lead to the giant positive MR. The high mobility may also have contributions to the positive MR. These results not only experimentally confirm that the giant positive MR can be realized in oxides but also open up new opportunities for developing and understanding the giant positive MR in oxides. PMID:29119138

Thermo-Mechanical Modeling of Laser-Mig Hybrid Welding (lmhw)

NASA Astrophysics Data System (ADS)

Kounde, Ludovic; Engel, Thierry; Bergheau, Jean-Michel; Boisselier, Didier

2011-01-01

Hybrid welding is a combination of two different technologies such as laser (Nd: YAG, CO2…) and electric arc welding (MIG, MAG / TIG …) developed to assemble thick metal sheets (over 3 mm) in order to reduce the required laser power. As a matter of fact, hybrid welding is a lso used in the welding of thin materials to benefit from process, deep penetration and gap limit. But the thermo-mechanical behaviour of thin parts assembled by LMHW technology for railway cars production is far from being controlled the modeling and simulation contribute to the assessment of the causes and effects of the thermo mechanical behaviour in the assembled parts. In order to reproduce the morphology of melted and heat-affected zones, two analytic functions were combined to model the heat source of LMHW. On one hand, we applied a so-called "diaboloïd" (DB) which is a modified hyperboloid, based on experimental parameters and the analysis of the macrographs of the welds. On the other hand, we used a so-called "double ellipsoïd" (DE) which takes the MIG only contribution including the bead into account. The comparison between experimental result and numerical result shows a good agreement.

Single channel double-duct liquid metal electrical generator using a magnetohydrodynamic device

DOEpatents

Haaland, C.M.; Deeds, W.E.

1999-07-13

A single channel double-duct liquid metal electrical generator using a magnetohydrodynamic (MHD) device. The single channel device provides useful output AC electric energy. The generator includes a two-cylinder linear-piston engine which drives liquid metal in a single channel looped around one side of the MHD device to form a double-duct contra-flowing liquid metal MHD generator. A flow conduit network and drive mechanism are provided for moving liquid metal with an oscillating flow through a static magnetic field to produce useful AC electric energy at practical voltages and currents. Variable stroke is obtained by controlling the quantity of liquid metal in the channel. High efficiency is obtained over a wide range of frequency and power output. 5 figs.

Single channel double-duct liquid metal electrical generator using a magnetohydrodynamic device

DOEpatents

Haaland, Carsten M.; Deeds, W. Edward

1999-01-01

A single channel double-duct liquid metal electrical generator using a magnetohydrodynamic (MHD) device. The single channel device provides useful output AC electric energy. The generator includes a two-cylinder linear-piston engine which drives liquid metal in a single channel looped around one side of the MHD device to form a double-duct contra-flowing liquid metal MHD generator. A flow conduit network and drive mechanism are provided for moving liquid metal with an oscillating flow through a static magnetic field to produce useful AC electric energy at practical voltages and currents. Variable stroke is obtained by controlling the quantity of liquid metal in the channel. High efficiency is obtained over a wide range of frequency and power output.

Modulation of the electrical properties in amorphous indium-gallium zinc-oxide semiconductor films using hydrogen incorporation

NASA Astrophysics Data System (ADS)

Song, Aeran; Park, Hyun-Woo; Chung, Kwun-Bum; Rim, You Seung; Son, Kyoung Seok; Lim, Jun Hyung; Chu, Hye Yong

2017-12-01

The electrical properties of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin films were investigated after thermal annealing and plasma treatment under different gas conditions. The electrical resistivity of a-IGZO thin films post-treated in a hydrogen ambient were lower than those without treatment and those annealed in air, regardless of the methods used for both thermal annealing and plasma treatment. The electrical properties can be explained by the quantity of hydrogen incorporated into the samples and the changes in the electronic structure in terms of the chemical bonding states, the distribution of the near-conduction-band unoccupied states, and the band alignment. As a result, the carrier concentrations of the hydrogen treated a-IGZO thin films increased, while the mobility decreased, due to the increase in the oxygen vacancies from the occurrence of unoccupied states in both shallow and deep levels.

Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shaikh, Shaheed U.; Desale, Dipalee J.; Siddiqui, Farha Y.

2012-11-15

Graphical abstract: The effect of different intensities (40, 60 100 and 200 W) of light on CdS quantum dots thin film annealed at 350 °C indicating enhancement in (a) photo-current and (b) photosensitivity. Highlights: ► The preparation of CdS nanodot thin film at room temperature by M-CBD technique. ► Study of air annealing on prepared CdS nanodots thin film. ► The optimized annealing temperature for CdS nanodot thin film is 350 °C. ► Modified CdS thin films can be used in photosensor application. -- Abstract: CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature usingmore » modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subsequently characterized by scanning electron microscopy, ultraviolet–visible spectroscopy, electrical resistivity and I–V system. The modifications observed in morphology and opto-electrical properties of the thin films are presented.« less

Multipass pumped Nd-based thin-disk lasers: continuous-wave laser operation at 1.06 and 0.9 {mu}m with intracavity frequency doubling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavel, Nicolaie; Luenstedt, Kai; Petermann, Klaus

2007-12-01

The laser performances of the 1.06 {mu}m 4F3/2 --> 4I11/2 four-level transition and of the 0.9 {mu}m 4F3/2 --> I9/24 quasi-three-level transition were investigated using multipass pumped Nd-based media in thin-disk geometry. When pumping at 0.81 {mu}m into the 4F5/2 level, continuous-wave laser operation was obtained with powers in excess of 10 W at 1.06 {mu}m, in the multiwatt region at 0.91 {mu}m in Nd:YVO4 and Nd:GdVO4, and at 0.95 {mu}m in Nd:YAG. Intracavity frequency-doubled Nd:YVO4 thin-disk lasers with output powers of 6.4 W at 532 nm and of 1.6 W at 457 nm were realized at this pumping wavelength.more » The pumping at 0.88 {mu}m, which is directed into the 4F3/2 emitting level, was also employed, and Nd:YVO4 and Nd:GdVO4 thin-disk lasers with {approx}9 W output power at 1.06 {mu}m and visible laser radiation at 0.53 {mu}m with output power in excess of 4 W were realized. Frequency-doubled Nd:vanadate thin-disk lasers with deep blue emission at 0.46 {mu}m were obtained under pumping directly into the 4F3/2 emitting level.« less

Transparent electrical conducting films by activated reactive evaporation

DOEpatents

Bunshah, Rointan; Nath, Prem

1982-01-01

Process and apparatus for producing transparent electrical conducting thin films by activated reactive evaporation. Thin films of low melting point metals and alloys, such as indium oxide and indium oxide doped with tin, are produced by physical vapor deposition. The metal or alloy is vaporized by electrical resistance heating in a vacuum chamber, oxygen and an inert gas such as argon are introduced into the chamber, and vapor and gas are ionized by a beam of low energy electrons in a reaction zone between the resistance heater and the substrate. There is a reaction between the ionized oxygen and the metal vapor resulting in the metal oxide which deposits on the substrate as a thin film which is ready for use without requiring post deposition heat treatment.

Structural, optical, morphological and electrical properties of undoped and Al-doped ZnO thin films prepared using sol—gel dip coating process

NASA Astrophysics Data System (ADS)

Boukhenoufa, N.; Mahamdi, R.; Rechem, D.

2016-11-01

In this work, sol—gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films. The impact of Al-doped concentration on the structural, optical, surface morphological and electrical properties of the elaborated samples was investigated. It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5%, where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ω·cm. Moreover, highest transparency has been recorded for the same Al concentration value. The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.

Non-ultraviolet-based patterning of polymer structures by optically induced electrohydrodynamic instability

NASA Astrophysics Data System (ADS)

Wang, Feifei; Yu, Haibo; Liu, Na; Mai, John D.; Liu, Lianqing; Lee, Gwo-Bin; Jung Li, Wen

2013-11-01

We report here an approach to rapidly construct organized formations of micron-scale pillars from a thin polydimethylsiloxane (PDMS) film by optically induced electrohydrodynamic instability (OEHI). In OEHI, a heterogeneous electric field is induced across two thin fluidic layers by stimulating a photoconductive thin film in a parallel-plate capacitor configuration with visible light. We demonstrated that this OEHI method could control nucleation sites of pillars formed by electrohydrodynamic instability. To investigate this phenomenon, a tangential electric force component is assumed to have arisen from the surface polarization charge and is introduced into the traditional perfect dielectric model for PDMS films. Numerical simulation results showed that this tangential electric force played an important role in OEHI.

Topological defects in electric double layers of ionic liquids at carbon interfaces

DOE PAGES

Black, Jennifer M.; Okatan, Mahmut Baris; Feng, Guang; ...

2015-06-07

The structure and properties of the electrical double layer in ionic liquids is of interest in a wide range of areas including energy storage, catalysis, lubrication, and many more. Theories describing the electrical double layer for ionic liquids have been proposed, however a full molecular level description of the double layer is lacking. To date, studies have been predominantly focused on ion distributions normal to the surface, however the 3D nature of the electrical double layer in ionic liquids requires a full picture of the double layer structure not only normal to the surface, but also in plane. Here wemore » utilize 3D force mapping to probe the in plane structure of an ionic liquid at a graphite interface and report the direct observation of the structure and properties of topological defects. The observation of ion layering at structural defects such as step-edges, reinforced by molecular dynamics simulations, defines the spatial resolution of the method. Observation of defects allows for the establishment of the universality of ionic liquid behavior vs. separation from the carbon surface and to map internal defect structure. In conclusion, these studies offer a universal pathway for probing the internal structure of topological defects in soft condensed matter on the nanometer level in three dimensions.« less

Film thickness measurement based on nonlinear phase analysis using a Linnik microscopic white-light spectral interferometer.

PubMed

Guo, Tong; Chen, Zhuo; Li, Minghui; Wu, Juhong; Fu, Xing; Hu, Xiaotang

2018-04-20

Based on white-light spectral interferometry and the Linnik microscopic interference configuration, the nonlinear phase components of the spectral interferometric signal were analyzed for film thickness measurement. The spectral interferometric signal was obtained using a Linnik microscopic white-light spectral interferometer, which includes the nonlinear phase components associated with the effective thickness, the nonlinear phase error caused by the double-objective lens, and the nonlinear phase of the thin film itself. To determine the influence of the effective thickness, a wavelength-correction method was proposed that converts the effective thickness into a constant value; the nonlinear phase caused by the effective thickness can then be determined and subtracted from the total nonlinear phase. A method for the extraction of the nonlinear phase error caused by the double-objective lens was also proposed. Accurate thickness measurement of a thin film can be achieved by fitting the nonlinear phase of the thin film after removal of the nonlinear phase caused by the effective thickness and by the nonlinear phase error caused by the double-objective lens. The experimental results demonstrated that both the wavelength-correction method and the extraction method for the nonlinear phase error caused by the double-objective lens improve the accuracy of film thickness measurements.

Electrophoresis of concentrically and eccentrically positioned cylindrical particles in a long tube.

PubMed

Liu, Hui; Bau, Haim H; Hu, Howard H

2004-03-30

We study analytically and numerically the electrophoretic motion of cylindrical particles translating slowly in long tubes filled with an electrolyte solution and subjected to axial electric fields. Both thin and thick double layers are considered. Of particular interest is the case when the particle's and tube's radii are of the same order of magnitude. The model accounts for the flow induced by the particle's motion (the particle acts as a leaky piston) and the electroosmotic flow in the tube. The electrophoretic velocity of the particle and the forces and torques acting on it are determined as functions of the particle's radius, length, and position, the particle's and tube's zeta potentials, the tube's length, and the externally imposed pressures. When the particle is positioned off center, it rotates and its trajectory traces an oscillatory path.

A numerical method for electro-kinetic flow with deformable fluid interfaces

NASA Astrophysics Data System (ADS)

Booty, Michael; Ma, Manman; Siegel, Michael

2013-11-01

We consider two-phase flow of ionic fluids whose motion is driven by an imposed electric field. At a fluid interface, a screening cloud of ions develops and forms an electro-chemical double layer or Debye layer. The imposed field acts on this induced charge distribution, resulting in a strong slip flow near the interface. We formulate a ``hybrid'' or multiscale numerical method in the thin Debye layer limit that incorporates an asymptotic analysis of the electrostatic potential and fluid dynamics in the Debye layer into a boundary integral solution of the full moving boundary problem. Results of the method are presented that show time-dependent deformation and steady state drop interface shapes when the timescale for charge-up of the Debye layer is either much less than or comparable to the timescale of the flow.

Fabrication and characterization of lead-free BaTiO3 thin film for storage device applications

NASA Astrophysics Data System (ADS)

Sharma, Hakikat; Negi, N. S.

2018-05-01

The lead-free BaTiO3 (BT) thin film solution has been prepared by sol-gel method. The prepared solution spin coated on Pt/TiO2/SiO2/ Si substrate. The fabricated thin film was analyzed by XRD and Raman spectrometer for structural conformation. Uniformity of thin film was examined by Atomic force microscope (AFM). Thickness of the film was measured by cross sectional FESEM. Activation energies for both positive and negative biasing have been calculated from temperature dependent leakage current density as a function of electric field. For ferroelectric memory devices such as FRAM the hysteresis loop plays important role. Electric filed dependent polarization of BT thin film measured at different switching voltages. With increasing voltage maximum polarization increases.

Aging behavior of near atmospheric N2 ambient sputtered/patterned Au IR absorber thin films

NASA Astrophysics Data System (ADS)

Gaur, Surender P.; Kothari, Prateek; Rangra, Kamaljit; Kumar, Dinesh

2018-03-01

Near atmospheric N2 ambient sputtered Au thin films exhibit significant spectral absorptivity over medium to long wave infrared radiations. Thin films were found adequately robust for micropatterning using conventional photolithography and metal lift off processes. Since long term spectral absorptivity is major practical concern for Au blacks, this paper reports on aging behavior of near atmospheric Ar and Ar + N2 (1:1) ambient sputtered infrared absorber Au thin films. Comparative analysis on electrical, morphological and spectral absorption behavior of twenty-five weeks room temperature/vacuum aged Au infrared absorber thin films is performed. The Ar and Ar + N2 ambient sputtered Au thing films have shown anticipated consistency in their physical, electrical and spectral properties regardless the long term aging in this work.

Electric-field control of conductance in metal quantum point contacts by electric-double-layer gating

NASA Astrophysics Data System (ADS)

Shibata, K.; Yoshida, K.; Daiguji, K.; Sato, H.; , T., Ii; Hirakawa, K.

2017-10-01

An electric-field control of quantized conductance in metal (gold) quantum point contacts (QPCs) is demonstrated by adopting a liquid-gated electric-double-layer (EDL) transistor geometry. Atomic-scale gold QPCs were fabricated by applying the feedback-controlled electrical break junction method to the gold nanojunction. The electric conductance in gold QPCs shows quantized conductance plateaus and step-wise increase/decrease by the conductance quantum, G0 = 2e2/h, as EDL-gate voltage is swept, demonstrating a modulation of the conductance of gold QPCs by EDL gating. The electric-field control of conductance in metal QPCs may open a way for their application to local charge sensing at room temperature.

Leakage current behavior in lead-free ferroelectric (K,Na)NbO3-LiTaO3-LiSbO3 thin films

NASA Astrophysics Data System (ADS)

Abazari, M.; Safari, A.

2010-12-01

Conduction mechanisms in epitaxial (001)-oriented pure and 1 mol % Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrate were investigated. Temperature dependence of leakage current density was measured as a function of applied electric field in the range of 200-380 K. It was shown that the different transport mechanisms dominate in pure and Mn-doped thin films. In pure (KNN-LT-LS) thin films, Poole-Frenkel emission was found to be responsible for the leakage, while Schottky emission was the dominant mechanism in Mn-doped thin films at higher electric fields. This is a remarkable yet clear indication of effect of 1 mol % Mn on the resistive behavior of such thin films.

Polyaniline-coated freestanding porous carbon nanofibers as efficient hybrid electrodes for supercapacitors

NASA Astrophysics Data System (ADS)

Tran, Chau; Singhal, Richa; Lawrence, Daniel; Kalra, Vibha

2015-10-01

Three-dimensional, free-standing, hybrid supercapacitor electrodes combining polyaniline (PANI) and porous carbon nanofibers (P-CNFs) were fabricated with the aim to integrate the benefits of both electric double layer capacitors (high power, cyclability) and pseudocapacitors (high energy density). A systematic investigation of three different electropolymerization techniques, namely, potentiodynamic, potentiostatic, and galvanostatic, for electrodeposition of PANI on freestanding carbon nanofiber mats was conducted. It was found that the galvanostatic method, where the current density is kept constant and can be easily controlled facilitates conformal and uniform coating of PANI on three-dimensional carbon nanofiber substrates. The electrochemical tests indicated that the PANI-coated P-CNFs exhibit excellent specific capacitance of 366 F g-1 (vs. 140 F g-1 for uncoated porous carbon nanofibers), 140 F cm-3 volumetric capacitance, and up to 2.3 F cm-2 areal capacitance at 100 mV s-1 scan rate. Such excellent performance is attributed to a thin and conformal coating of PANI achieved using the galvanostatic electrodeposition technique, which not only provides pseudocapacitance with high rate capability, but also retains the double-layer capacitance of the underlying P-CNFs.

The electric double layer at a metal electrode in pure water

NASA Astrophysics Data System (ADS)

Brüesch, Peter; Christen, Thomas

2004-03-01

Pure water is a weak electrolyte that dissociates into hydronium ions and hydroxide ions. In contact with a charged electrode a double layer forms for which neither experimental nor theoretical studies exist, in contrast to electrolytes containing extrinsic ions like acids, bases, and solute salts. Starting from a self-consistent solution of the one-dimensional modified Poisson-Boltzmann equation, which takes into account activity coefficients of point-like ions, we explore the properties of the electric double layer by successive incorporation of various correction terms like finite ion size, polarization, image charge, and field dissociation. We also discuss the effect of the usual approximation of an average potential as required for the one-dimensional Poisson-Boltzmann equation, and conclude that the one-dimensional approximation underestimates the ion density. We calculate the electric potential, the ion distributions, the pH-values, the ion-size corrected activity coefficients, and the dissociation constants close to the electric double layer and compare the results for the various model corrections.

Sound transmission through finite lightweight multilayered structures with thin air layers.

PubMed

Dijckmans, A; Vermeir, G; Lauriks, W

2010-12-01

The sound transmission loss (STL) of finite lightweight multilayered structures with thin air layers is studied in this paper. Two types of models are used to describe the vibro-acoustic behavior of these structures. Standard transfer matrix method assumes infinite layers and represents the plane wave propagation in the layers. A wave based model describes the direct sound transmission through a rectangular structure placed between two reverberant rooms. Full vibro-acoustic coupling between rooms, plates, and air cavities is taken into account. Comparison with double glazing measurements shows that this effect of vibro-acoustic coupling is important in lightweight double walls. For infinite structures, structural damping has no significant influence on STL below the coincidence frequency. In this frequency region, the non-resonant transmission or so-called mass-law behavior dominates sound transmission. Modal simulations suggest a large influence of structural damping on STL. This is confirmed by experiments with double fiberboard partitions and sandwich structures. The results show that for thin air layers, the damping induced by friction and viscous effects at the air gap surfaces can largely influence and improve the sound transmission characteristics.

Reorientation of the diagonal double-stripe spin structure at Fe 1+yTe bulk and thin-film surfaces

DOE PAGES

Hanke, Torben; Singh, Udai Raj; Cornils, Lasse; ...

2017-01-06

Here, establishing the relation between ubiquitous antiferromagnetism in the parent compounds of unconventional superconductors and their superconducting phase is important for understanding the complex physics in these materials. Going from bulk systems to thin films additionally affects their phase diagram. For Fe 1+yTe, the parent compound of Fe 1+ySe 1$-x$Tex superconductors, bulk-sensitive neutron diffraction revealed an in-plane oriented diagonal double-stripe antiferromagnetic spin structure. Here we show by spin-resolved scanning tunnelling microscopy that the spin direction at the surfaces of bulk Fe 1+yTe and thin films grown on the topological insulator Bi 2Te 3 is canted out of the high-symmetry directionsmore » of the surface unit cell resulting in a perpendicular spin component, keeping the diagonal double-stripe order. As the magnetism of the Fe d-orbitals is intertwined with the superconducting pairing in Fe-based materials, our results imply that the superconducting properties at the surface of the related superconducting compounds might be different from the bulk.« less

Reorientation of the diagonal double-stripe spin structure at Fe 1+yTe bulk and thin-film surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanke, Torben; Singh, Udai Raj; Cornils, Lasse

Here, establishing the relation between ubiquitous antiferromagnetism in the parent compounds of unconventional superconductors and their superconducting phase is important for understanding the complex physics in these materials. Going from bulk systems to thin films additionally affects their phase diagram. For Fe 1+yTe, the parent compound of Fe 1+ySe 1$-x$Tex superconductors, bulk-sensitive neutron diffraction revealed an in-plane oriented diagonal double-stripe antiferromagnetic spin structure. Here we show by spin-resolved scanning tunnelling microscopy that the spin direction at the surfaces of bulk Fe 1+yTe and thin films grown on the topological insulator Bi 2Te 3 is canted out of the high-symmetry directionsmore » of the surface unit cell resulting in a perpendicular spin component, keeping the diagonal double-stripe order. As the magnetism of the Fe d-orbitals is intertwined with the superconducting pairing in Fe-based materials, our results imply that the superconducting properties at the surface of the related superconducting compounds might be different from the bulk.« less

Laser Radiation Pressure Acceleration of Monoenergetic Protons in an Ultra-Thin Foil

NASA Astrophysics Data System (ADS)

Eliasson, Bengt; Liu, Chuan S.; Shao, Xi; Sagdeev, Roald Z.; Shukla, Padma K.

2009-11-01

We present theoretical and numerical studies of the acceleration of monoenergetic protons in a double layer formed by the laser irradiation of an ultra-thin film. The stability of the foil is investigated by direct Vlasov-Maxwell simulations for different sets of laser-plasma parameters. It is found that the foil is stable, due to the trapping of both electrons and ions in the thin laser-plasma interaction region, where the electrons are trapped in a potential well composed of the ponderomo-tive potential of the laser light and the electrostatic potential due to the ions, and the ions are trapped in a potential well composed of the inertial potential in an accelerated frame and the electrostatic potential due to the electrons. The result is a stable double layer, where the trapped ions are accelerated to monoenergetic energies up to 100 MeV and beyond, which makes them suitable for medical applications cancer treatment. The underlying physics of trapped and untapped ions in a double layer is also investigated theoretically and numerically.

Specific considerations for obtaining appropriate La1-xSrxGa1-yMgyO3-δ thin films using pulsed-laser deposition and its influence on the performance of solid-oxide fuel cells

NASA Astrophysics Data System (ADS)

Hwang, Jaeyeon; Lee, Heon; Lee, Jong-Ho; Yoon, Kyung Joong; Kim, Hyoungchul; Hong, Jongsup; Son, Ji-Won

2015-01-01

To obtain La1-xSrxGa1-yMgyO3-δ (LSGM) thin films with the appropriate properties, pulsed-laser deposition (PLD) is employed, and specific considerations regarding control of the deposition parameters is investigated. It is demonstrated that with a target of stoichiometric composition, appropriate LSGM thin films cannot be produced because of the deviation of the composition from the target to the thin film. Only after adjusting the target composition an LSGM thin film with an appropriate composition and phase can be obtained. The optimized LSGM thin film possesses an electrical conductivity close to that of the bulk LSGM. In contrast, non-optimized thin films do not yield any measurable electrical conductivity. The impact of the optimization of the LSGM thin-film electrolyte on the cell performance is quite significant, in that a solid-oxide fuel cell (SOFC) with an optimized LSGM thin-film electrolyte produces a maximum power density of 1.1 W cm-2 at 600 °C, whereas an SOFC with a non-optimal LSGM thin-film electrolyte is not operable.

Effects of drying temperature on tomato-based thin film as self-powered UV photodetector

NASA Astrophysics Data System (ADS)

Thu, Myo Myo; Mastuda, Atsunori; Cheong, Kuan Yew

2018-07-01

In this work, tomato thin-film is used as an active natural organic layer for UV photodetector. The effects of drying temperature (60-140 °C) on structural, chemical, electrical and UV sensing properties of tomato thin-film have been investigated. The photodetector consists of a glass substrate/tomato thin-film active layer/interdigitated aluminium electrode structure. As the drying temperature increases, surface and density of tomato thin-film is smoother and denser with thinner physical thickness. Chemical functional groups as a function of drying temperature is evaluated and correlated with the electrical property of thin film. A comparison between dark and UV (B and C) illumination with respect to the electrical property has been revealed and the observation has been linked to the active chemical compounds that controlling antioxidant activity in the tomato. By drying the tomato thin-film at 120°C, a self-powered (V = 0 V) photodetector that is able to selectively detecting UV-C can be obtained with external quantum efficiency (η) of 2.53 × 10-7%. While drying it at 140 °C, the detector is better in detecting UV-B when operating at either 5 or -5 V with η of 7.7384 × 10-6% and 8.87 × 10-6%, respectively. The typical response time for raising and falling for all samples are less than 0.3 s.

Quantum ballistic analysis of transition metal dichalcogenides based double gate junctionless field effect transistor and its application in nano-biosensor

NASA Astrophysics Data System (ADS)

Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.

2017-11-01

To reduce the thermal budget and the short channel effects in state of the art CMOS technology, Junctionless field effect transistor (JLFET) has been proposed in the literature. Numerous experimental, modeling, and simulation based works have been done on this new FET with bulk materials for various geometries until now. On the other hand, the two-dimensional layered material is considered as an alternative to current Si technology because of its ultra-thin body and high mobility. Very recently few simulation based works have been done on monolayer molybdenum disulfide based JLFET mainly to show the advantage of JLFET over conventional FET. However, no comprehensive simulation-based work has been done for double gate JLFET keeping in mind the prominent transition metal dichalcogenides (TMDC) to the authors' best knowledge. In this work, we have studied quantum ballistic drain current-gate voltage characteristics of such FETs within non-equilibrium Green's function (NEGF) framework. Our simulation results reveal that all these TMDC materials are viable options for implementing state of the art Junctionless MOSFET with emphasis on their performance at short gate lengths. Besides evaluating the prospect of TMDC materials in the digital logic application, the performance of Junctionless Double Gate trilayer TMDC heterostructure FET for the label-free electrical detection of biomolecules in dry environment has been investigated for the first time to the authors' best knowledge. The impact of charge neutral biomolecules on the electrical characteristics of the biosensor has been analyzed under dry environment situation. Our study shows that these materials could provide high sensitivity in the sub-threshold region as a channel material in nano-biosensor, a trend demonstrated by silicon on insulator FET sensor in the literature. Thus, going by the trend of replacing silicon with these novel materials in device level, TMDC heterostructure could be a viable alternative to silicon for potentiometric biosensing.

Templated Sub-100-nm-Thick Double-Gyroid Structure from Si-Containing Block Copolymer Thin Films.

PubMed

Aissou, Karim; Mumtaz, Muhammad; Portale, Giuseppe; Brochon, Cyril; Cloutet, Eric; Fleury, Guillaume; Hadziioannou, Georges

2017-05-01

The directed self-assembly of diblock copolymer chains (poly(1,1-dimethyl silacyclobutane)-block-polystyrene, PDMSB-b-PS) into a thin film double gyroid structure is described. A decrease of the kinetics of a typical double-wave pattern formation is reported within the 3D-nanostructure when the film thickness on mesas is lower than the gyroid unit cell. However, optimization of the solvent-vapor annealing process results in very large grains (over 10 µm²) with specific orientation (i.e., parallel to the air substrate) and direction (i.e., along the groove direction) of the characteristic (211) plane, demonstrated by templating sub-100-nm-thick PDMSB-b-PS films. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimized batteries for cars with dual electrical architecture

NASA Astrophysics Data System (ADS)

Douady, J. P.; Pascon, C.; Dugast, A.; Fossati, G.

During recent years, the increase in car electrical equipment has led to many problems with traditional starter batteries (such as cranking failure due to flat batteries, battery cycling etc.). The main causes of these problems are the double function of the automotive battery (starter and service functions) and the difficulties in designing batteries well adapted to these two functions. In order to solve these problems a new concept — the dual-concept — has been developed with two separate batteries: one battery is dedicated to the starter function and the other is dedicated to the service function. Only one alternator charges the two batteries with a separation device between the two electrical circuits. The starter battery is located in the engine compartment while the service battery is located at the rear of the car. From the analysis of new requirements, battery designs have been optimized regarding the two types of functions: (i) a small battery with high specific power for the starting function; for this function a flooded battery with lead-calcium alloy grids and thin plates is proposed; (ii) for the service function, modified sealed gas-recombinant batteries with cycling and deep-discharge ability have been developed. The various advantages of the dual-concept are studied in terms of starting reliability, battery weight, and voltage supply. The operating conditions of the system and several dual electrical architectures have also been studied in the laboratory and the car. The feasibility of the concept is proved.

Effect of Al gate on the electrical behaviour of Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Skeparovski, A.; Novkovski, N.; Atanassova, E.; Paskaleva, A.; Lazarov, V. K.

2011-06-01

The electrical behaviour of Al-doped Ta2O5 films on nitrided silicon and implemented in Al-gated MIS capacitors has been studied. The dopant was introduced into the Ta2O5 through its surface by deposing a thin Al layer on the top of Ta2O5 followed by an annealing process. The HRTEM images reveal that the initial double-layer structure of the stacks composed of doped Ta2O5 and interfacial SiON layer undergoes changes during the formation of the Al gate and transforms into a three-layer structure with an additional layer between the Al electrode and the doped Ta2O5. This layer, being a result of reaction between the Al gate and the Al-doped Ta2O5, affects the overall electrical properties of the stacks. Strong charge trapping/detrapping processes have been established in the vicinity of the doped Ta2O5/SiON interface resulting in a large C-V hysteresis effect. The charge trapping also influences the current conduction in the layers keeping the current density level rather low even at high electric fields (J < 10-6 A cm-2 at 7 MV cm-1). By employing a three-layer model of the stack, the permittivity of both, the Al-doped Ta2O5 and the additional layer, has been estimated and the corresponding conduction mechanisms identified.

Modeling and simulations of the double-probe electric field instrument in tenuous and cold streaming plasmas

NASA Astrophysics Data System (ADS)

Miyake, Y.; Cully, C. M.; Usui, H.; Nakashima, H.

2013-12-01

In order to increase accuracy and reliability of in-situ measurements made by scientific spacecraft, it is imperative to develop comprehensive understanding of spacecraft-plasma interactions. In space environments, not only the spacecraft charging but also surrounding plasma disturbances such as caused by the wake formation may interfere directly with in-situ measurements. The self-consistent solutions of such phenomena are necessary to assess their effects on scientific spacecraft systems. As our recent activity, we work on the modeling and simulations of Cluster double-probe instrument in tenuous and cold streaming plasmas [1]. Double-probe electric field sensors are often deployed using wire booms with radii much less than typical Debye lengths of magnetospheric plasmas (millimeters compared to tens of meters). However, in tenuous and cold streaming plasmas seen in the polar cap and lobe regions, the wire booms have a high positive potential due to photoelectron emission and can strongly scatter approaching ions. Consequently, an electrostatic wake formed behind the spacecraft is further enhanced by the presence of the wire booms. We reproduce this process for the case of the Cluster satellite by performing plasma particle-in-cell (PIC) simulations [2], which include the effects of both the spacecraft body and the wire booms in a simultaneous manner, on modern supercomputers. The simulations reveal that the effective thickness of the booms for the Cluster Electric Field and Wave (EFW) instrument is magnified from its real thickness (2.2 millimeters) to several meters, when the spacecraft potential is at 30-40 volts. Such booms enhance the wake electric field magnitude by a factor of about 2 depending on the spacecraft potential, and play a principal role in explaining the in situ Cluster EFW data showing sinusoidal spurious electric fields of about 10 mV/m amplitudes. The boom effects are quantified by comparing PIC simulations with and without wire booms. The paper also reports some recent progress of ongoing PIC simulation research that focuses on spurious electric field generation in subsonic ion flows. Our preliminary simulation results revealed that; (1) there is no apparent wake signature behind the spacecraft in such a condition, but (2) spurious electric field over 1 mV/m amplitude is observed in the direction of the flow vector. The observed field amplitude is sometimes comparable to the convection electric field (a few mV/m) associated with the flow. Our analysis also confirmed that the spurious field is caused by a weakly-asymmetric potential pattern created by the ion flow. We will present the parametric study of such spurious fields for various conditions of plasma flows. [References] [1] Miyake, Y., C. M. Cully, H. Usui, and H. Nakashima (2013), Plasma particle simulations of wake formation behind a spacecraft with thin wire booms, submitted to J. Geophys. Res. [2] Miyake, Y., and H. Usui (2009), New electromagnetic particle simulation code for the analysis of spacecraft-plasma interactions, Phys. Plasmas, 16, 062904, doi:10.1063/1.3147922.

Physicochemical controls on absorbed water film thickness in unsaturated geological media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tokunaga, T.

2011-06-14

Adsorbed water films commonly coat mineral surfaces in unsaturated soils and rocks, reducing flow and transport rates. Therefore, it is important to understand how adsorbed film thickness depends on matric potential, surface chemistry, and solution chemistry. Here, the problem of adsorbed water film thickness is examined through combining capillary scaling with the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory. Novel aspects of this analysis include determining capillary influences on film thicknesses, and incorporating solution chemistry-dependent electrostatic potential at air-water interfaces. Capillary analysis of monodisperse packings of spherical grains provided estimated ranges of matric potentials where adsorbed films are stable, and showed that pendular ringsmore » within drained porous media retain most of the 'residual' water except under very low matric potentials. Within drained pores, capillary contributions to thinning of adsorbed films on spherical grains are shown to be small, such that DLVO calculations for flat surfaces are suitable approximations. Hamaker constants of common soil minerals were obtained to determine ranges of the dispersion component to matric potential-dependent film thickness. The pressure component associated with electrical double layer forces was estimated using the compression and linear superposition approximations. The pH-dependent electrical double layer pressure component is the dominant contribution to film thicknesses at intermediate values of matric potential, especially in lower ionic strength solutions (< 10 mol m{sup -3}) on surfaces with higher magnitude electrostatic potentials (more negative than - 50 mV). Adsorbed water films are predicted to usually range in thickness from 1 to 20 nm in drained pores and fractures of unsaturated environments.« less

Physicochemical controls on adsorbed water film thickness in unsaturated geological media

NASA Astrophysics Data System (ADS)

Tokunaga, Tetsu K.

2011-08-01

Adsorbed water films commonly coat mineral surfaces in unsaturated soils and rocks, reducing flow and transport rates. Therefore, it is important to understand how adsorbed film thickness depends on matric potential, surface chemistry, and solution chemistry. Here the problem of adsorbed water film thickness is examined by combining capillary scaling with the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory. Novel aspects of this analysis include determining capillary influences on film thicknesses and incorporating solution chemistry-dependent electrostatic potential at air-water interfaces. Capillary analysis of monodisperse packings of spherical grains provided estimated ranges of matric potentials where adsorbed films are stable and showed that pendular rings within drained porous media retain most of the "residual" water except under very low matric potentials. Within drained pores, capillary contributions to thinning of adsorbed films on spherical grains are shown to be small, such that DLVO calculations for flat surfaces are suitable approximations. Hamaker constants of common soil minerals were obtained to determine ranges of the dispersion component to matric potential-dependent film thickness. The pressure component associated with electrical double-layer forces was estimated using the compression and linear superposition approximations. The pH-dependent electrical double-layer pressure component is the dominant contribution to film thicknesses at intermediate values of matric potential, especially in lower ionic strength solutions (<10 mol m-3) on surfaces with higher-magnitude electrostatic potentials (more negative than ≈-50 mV). Adsorbed water films are predicted to usually range in thickness from ≈1 to 20 nm in drained pores and fractures of unsaturated environments.

Substituted Quaternary Ammonium Salts Improve Low-Temperature Performance of Double-Layer Capacitors

NASA Technical Reports Server (NTRS)

Brandon, Erik J.; Smart, Marshall C.; West, William C.

2011-01-01

Double-layer capacitors are unique energy storage devices, capable of supporting large current pulses as well as a very high number of charging and discharging cycles. The performance of doublelayer capacitors is highly dependent on the nature of the electrolyte system used. Many applications, including for electric and fuel cell vehicles, back-up diesel generators, wind generator pitch control back-up power systems, environmental and structural distributed sensors, and spacecraft avionics, can potentially benefit from the use of double-layer capacitors with lower equivalent series resistances (ESRs) over wider temperature limits. Higher ESRs result in decreased power output, which is a particular problem at lower temperatures. Commercially available cells are typically rated for operation down to only 40 C. Previous briefs [for example, Low Temperature Supercapacitors (NPO-44386), NASA Tech Briefs, Vol. 32, No. 7 (July 2008), p. 32, and Supercapacitor Electrolyte Solvents With Liquid Range Below 80 C (NPO-44855), NASA Tech Briefs, Vol. 34, No. 1 (January 2010), p. 44] discussed the use of electrolytes that employed low-melting-point co-solvents to depress the freezing point of traditional acetonitrile-based electrolytes. Using these modified electrolyte formulations can extend the low-temperature operational limit of double-layer capacitors beyond that of commercially available cells. This previous work has shown that although the measured capacitance is relatively insensitive to temperature, the ESR can rise rapidly at low temperatures, due to decreased electrolyte conductance within the pores of the high surface- area carbon electrodes. Most of these advanced electrolyte systems featured tetraethylammonium tetrafluoroborate (TEATFB) as the salt. More recent work at JPL indicates the use of the asymmetric quaternary ammonium salt triethylmethylammonium tetrafluoroborate (TEMATFB) or spiro-(l,l')-bipyrrolidium tetrafluoroborate (SBPBF4) in a 1:1 by volume solvent mixture of acetonitrile (AN) and methyl formate (MF) enables double-layer capacitor cells to operate well below -40 C with a relatively low ESR. Typically, a less than twofold increase in ESR is observed at -65 C relative to room-temperature values, when these modified electrolyte blends are used in prototype cells. Double-layer capacitor coin cells filled with these electrolytes have displayed the lowest measured ESR for an organic electrolyte to date at low temperature (based on a wide range of electrolyte screening studies at JPL). The cells featured high-surface-area (approximately equal to 2,500 m/g) carbon electrodes that were 0.50 mm thick and 1.6 cm in diameter, and coated with a thin layer of platinum to reduce cell resistance. A polyethylene separator was used to electrically isolate the electrodes.

Effect of Annealing Temperature on Structural, Optical, and Electrical Properties of Sol-Gel Spin-Coating-Derived Cu2ZnSnS4 Thin Films

NASA Astrophysics Data System (ADS)

Hosseinpour, Rabie; Izadifard, Morteza; Ghazi, Mohammad Ebrahim; Bahramian, Bahram

2018-02-01

The effect of annealing temperature on structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films grown on a glass substrate by spin coating sol-gel technique has been studied. Structural study showed that all samples had kesterite crystalline structure. Scanning electron microscopy images showed that the crystalline quality of the samples was improved by heat treatment. Optical study showed that the energy gap values for the samples ranged from 1.55 eV to 1.78 eV. Moreover, good optical conductivity values (1012 S-1 to 1014 S-1) were obtained for the samples. Investigation of the electrical properties of the CZTS thin films showed that the carrier concentration increased significantly with the annealing temperature. The photoelectrical behavior of the samples revealed that the photocurrent under light illumination increased significantly. Overall, the results show that the CZTS thin films annealed at 500°C had better structural, optical, and electrical properties and that such CZTS thin films are desirable for use as absorber layers in solar cells. The photovoltaic properties of the CZTS layer annealed at 500°C were also investigated and the associated figure of merit calculated. The results showed that the fabricated ZnS-CZTS heterojunction exhibited good rectifying behavior but rather low fill factor.

Origin of the Strain Sensitivity for an Organic Heptazole Thin-Film and Its Strain Gauge Application

NASA Astrophysics Data System (ADS)

Bae, Heesun; Jeon, Pyo Jin; Park, Ji Hoon; Lee, Kimoon

2018-04-01

The authors report on the origin of the strain sensitivity for an organic C26H16N2 (heptazole) thinfilm and its application for the detection of tensile strain. From the electrical characterization on the thin-film transistor adopting a heptazole channel, heptazole film exhibits p-channel conduction with a relatively low value of field-effect mobility (0.05 cm2/Vs), suggesting a hopping conduction behavior via hole carriers. By analyzing the strain and temperature dependences of the electrical conductivity, we reveal that the electrical conduction for a heptazole thin-film is dominated by the variable range hopping process with quite a large energy separation (224.9 meV) between the localized states under a relatively long attenuation length (10.46 Å). This indicates that a change in the inter-grain spacing that is much larger than the attenuation length is responsible for the reversible modification of electrical conductivity depending on strain for the heptazole film. By utilizing our heptazole thin-film both as a strain sensitive passive resistor and an active semiconducting channel layer, we can achieve a strain gauge device exhibiting reversible endurance for tensile strains up to 2.12%. Consequently, this study advances the understanding of the fundamental strain sensing mechanism in a heptazole thin-film toward finding a promise material with a strain gauge for applications as potential flexible devices and/or wearable electronics.

Effect of Induced Charge Electroosmosis on the Dielectrophoretic Motion of Particles

NASA Astrophysics Data System (ADS)

Swaminathan, T.; Hu, Howard

2006-11-01

Most suspensions involve the formation of ionic double layers next to the surface of particles due to the induced-charge on the surface. These double layers affect the motion of the particle even under AC electric fields. They modify the net dipole moment of the particle and at the same time produce slip velocities on the surfaces of these particles. A method to numerically evaluate the effect of the double layer on the dielectrophoretic motion of particles has been previously developed to study these two effects. The technique involves a matched asymptotic expansion of the electric field near the particle surface, where the double layer is formed, and is written as a jump-boundary-condition for the electric potential when the thickness of the double layer is small compared to the size of the particle. The developed jump-boundary-condition is then used to calculate an effective zeta potential on the particle surface. Unlike classical electroosmosis, this zeta potential is no longer constant on every part of the surface and is dependent on the applied electric field. The effect of the induced-charge electroosmotic slip velocity on the dielectrophoretic motion of particles has been observed using this technique.

Electrical and Structural Origin of Self-Healing Phenomena in Pentacene Thin Films.

PubMed

Kang, Evan S H; Zhang, Hongbin; Donner, Wolfgang; von Seggern, Heinz

2017-04-01

Self-healing induced by structural phase transformation is demonstrated using pentacene field-effect transistors. During the self-healing process, the electrical properties at the pentacene interfaces improve due to the phase transformation from monolayer phase to thin-film phase. Enhanced mobility is confirmed by first-principles calculations. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thinmore » films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Electric-field induced spin accumulation in the Landau level states of topological insulator thin films

NASA Astrophysics Data System (ADS)

Siu, Zhuo Bin; Chowdhury, Debashree; Basu, Banasri; Jalil, Mansoor B. A.

2017-08-01

A topological insulator (TI) thin film differs from the more typically studied thick TI system in that the former has both a top and a bottom surface where the states localized at both surfaces can couple to one other across the finite thickness. An out-of-plane magnetic field leads to the formation of discrete Landau level states in the system, whereas an in-plane magnetization breaks the angular momentum symmetry of the system. In this work, we study the spin accumulation induced by the application of an in-plane electric field to the TI thin film system where the Landau level states and inter-surface coupling are simultaneously present. We show, via Kubo formula calculations, that the in-plane spin accumulation perpendicular to the magnetization due to the electric field vanishes for a TI thin film with symmetric top and bottom surfaces. A finite in-plane spin accumulation perpendicular to both the electric field and magnetization emerges upon applying either a differential magnetization coupling or a potential difference between the two film surfaces. This spin accumulation results from the breaking of the antisymmetry of the spin accumulation around the k-space equal-energy contours.

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-06-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

Effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films

NASA Astrophysics Data System (ADS)

Kudo, Kohei; Yamada, Shinya; Chikada, Jinichiro; Shimanuki, Yuta; Nakamura, Yoshiaki; Hamaya, Kohei

2018-04-01

We study the effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films. We find that temperature dependence of electrical resistivity and carrier type for Fe2- x V1+ x Al films are similar to those for bulk samples reported previously. In addition, the electrical and thermoelectric properties can be modulated by varying x. These results indicate that the electronic band structure having a pseudo gap at around the Fermi level is demonstrated even in thin-film Fe2VAl samples. This study will lead to further improvement in thermoelectric properties of the thin-film Fe2VAl.

AC electric field induced dielectrophoretic assembly behavior of gold nanoparticles in a wide frequency range

NASA Astrophysics Data System (ADS)

Liu, Weiyu; Wang, Chunhui; Ding, Haitao; Shao, Jinyou; Ding, Yucheng

2016-05-01

In this work, we focus on frequency-dependence of pearl chain formations (PCF) of gold nanoparticles driven by AC dielectrophoresis (DEP), especially in a low field-frequency range, where induced double-layer charging effect at ideally polarizable surfaces on particle DEP behavior and surrounding liquid motion need not be negligible. As field frequency varies, grown features of DEP assembly structures ranging from low-frequency non-bridged gap to high-frequency single gold nanoparticle-made nanowires bridging the electrodes are demonstrated experimentally. Specifically, at 10 kHz, a kind of novel channel-like structure with parallel opposing banks is formed at the center of interelectrode gap. In stark contrast, at 1 MHz, thin PCF with diameter of 100 nm is created along the shortest distance of the isolation spacing. Moreover, a particular conductive path of nanoparticle chains is produced at 1 MHz in a DEP device embedded with multiple floating electrodes. A theoretical framework taking into account field-induced double-layer polarization at both the particle/electrolyte and electrode/electrolyte interface is developed to correlate these experimental observations with induced-charge electrokinetic (ICEK) phenomenon. And a RC circuit model is helpful in accounting for the formation of this particular non-bridged channel-like structure induced by a low-frequency AC voltage. As compared to thin PCF formed at high field frequency that effectively short circuits the electrode pair, though it is difficult for complete PCF bridging to occur at low frequency, the non-bridged conducting microstructure has potential to further miniaturize the size of electrode gap fabricated by standard micromachining process and may find useful application in biochemical sensing.

Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Feng, E-mail: fangfeng@seu.edu.cn; Zhang, Yeyu; Wu, Xiaoqin

2015-08-15

Graphical abstract: The best SnO{sub 2}:N TCO film: about 80% transmittance and 9.1 × 10{sup −4} Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO{sub 2}:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10{sup −4} Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO{sub 2}:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical propertiesmore » of thin films were investigated. Experimental results showed that SnO{sub 2}:N films were amorphous state, and O/Sn ratios of SnO{sub 2}:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO{sub 2}:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO{sub 2}:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO{sub 2}:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10{sup −4} Ω cm.« less

Formation of Fe2SiO4 thin films on Si substrates and influence of substrate to its thermoelectric transport properties

NASA Astrophysics Data System (ADS)

Choi, Jeongyong; Nguyen, Van Quang; Duong, Van Thiet; Shin, Yooleemi; Duong, Anh Tuan; Cho, Sunglae

2018-03-01

Fe2SiO4 thin films have been grown on n-type, p-type and semi-insulating Si(100) substrates by molecular beam epitaxy. When Fe-O thin films were deposited on Si(100) substrate at 300 °C, the film reacted with Si, resulting in a Fe2SiO4 film because of the high reactivity between Fe and Si. The electrical resistance and Seebeck coefficient of Fe2SiO4 thin films grown were different in different doping states. On n-type and p-type Si(100), the electrical resistance decreased suddenly and increased again at 350 and 250 K, respectively, while on semi-insulating Si(100), it exhibited typical semiconducting resistance behavior. We observed similar crossovers at 350 and 250 K in temperature dependent Seebeck coefficients on n-type and p-type Si(100), respectively. These results suggest that the measured electrical and thermoelectric properties originate from Si substrate.

Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sherchenkov, A. A.; Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru; Lazarenko, P. I.

The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors Ge{sub 2}Sb{sub 2}Te{sub 5}, GeSb{sub 2}Te{sub 5}, and GeSb{sub 4}Te{sub 7} are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shiftmore » along the quasi-binary line GeTe–Sb{sub 2}Te{sub 3}, which is important for targeted optimization of the phase change memory technology.« less

A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

NASA Technical Reports Server (NTRS)

Liu, S. Q.; Wu, N. J.; Ignatiev, A.

2001-01-01

A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

Characterizing Electric Field Exposed P3HT Thin Films Using Polarized-Light Spectroscopies

DOE PAGES

Bhattacharjee, Ujjal; Elshobaki, Moneim; Santra, Kalyan; ...

2016-06-23

P3HT (poly (3-hexylthiophene)) has been widely used as a donor in the active layer in organic photovoltaic devices. Although moderately high-power conversion efficiencies have been achieved with P3HT-based devices, structural details, such as the orientation of polymer units and the extent of H- and J-aggregation are not yet fully understood; and different measures have been taken to control the ordering in the material. One such measure, which we have exploited, is to apply an electric field from a Van de Graaff generator. We used fluorescence (to measure anisotropy instead of polarization, which is more commonly measured) and Raman spectroscopy tomore » characterize the order of P3HT molecules in thin films resulting from the field. We determine preferential orientations of the units in a thin film, consistent with observed hole mobility in thin-film-transistors, and observe that the apparent H-coupling strength changes when the films are exposed to oriented electrical fields during drying.« less

Effect of substrate rotation speed and off-center deposition on the structural, optical, and electrical properties of AZO thin films fabricated by DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Turkoglu, F.; Koseoglu, H.; Zeybek, S.; Ozdemir, M.; Aygun, G.; Ozyuzer, L.

2018-04-01

In this study, aluminum-doped zinc oxide (AZO) thin films were deposited by DC magnetron sputtering at room temperature. The distance between the substrate and target axis, and substrate rotation speed were varied to get high quality AZO thin films. The influences of these deposition parameters on the structural, optical, and electrical properties of the fabricated films were investigated by X-ray diffraction (XRD), Raman spectroscopy, spectrophotometry, and four-point probe techniques. The overall analysis revealed that both sample position and substrate rotation speed are effective in changing the optical, structural, and electrical properties of the AZO thin films. We further observed that stress in the films can be significantly reduced by off-center deposition and rotating the sample holder during the deposition. An average transmittance above 85% in the visible range and a resistivity of 2.02 × 10-3 Ω cm were obtained for the AZO films.

Structure and Dynamics of Domains in Ferroelectric Nanostructures. In-situ TEM Studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Xiaoqing

2015-06-30

The goal of this project was to explore the structure and dynamic behaviors of ferroelectric domains in ferroelectric thin films and nanostructures by advanced transmission electron microscopy (TEM) techniques in close collaboration with phase field modeling. The experimental techniques used include aberration-corrected sub-Å resolution TEM and in-situ TEM using a novel scanning tunneling microscopy (STM) - TEM holder that allows the direct observation of nucleation and dynamic evolution of ferroelectric domains under applied electric field. Specifically, this project was aimed to (1) to study the roles of static electrical boundary conditions and electrical charge in controlling the equilibrium domain structuresmore » of BiFeO 3 thin films with controlled substrate constraints, (2) to explore the fundamental mechanisms of ferroelectric domain nucleation, growth, and switching under an applied electric field in both uniform thin films and nanostructures, and to understand the roles of crystal defects such as dislocations and interfaces in these processes, (3) to understand the physics of ferroelectric domain walls and the influence of defects on the electrical switching of ferroelectric domains.« less

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Transparent electrical conducting films by activated reactive evaporation

DOEpatents

Bunshah, R.; Nath, P.

1982-06-22

Process and apparatus for producing transparent electrical conducting thin films by activated reactive evaporation is disclosed. Thin films of low melting point metals and alloys, such as indium oxide and indium oxide doped with tin, are produced by physical vapor deposition. The metal or alloy is vaporized by electrical resistance heating in a vacuum chamber, oxygen and an inert gas such as argon are introduced into the chamber, and vapor and gas are ionized by a beam of low energy electrons in a reaction zone between the resistance heater and the substrate. There is a reaction between the ionized oxygen and the metal vapor resulting in the metal oxide which deposits on the substrate as a thin film which is ready for use without requiring post deposition heat treatment. 1 fig.

Ceramic Composite Thin Films

NASA Technical Reports Server (NTRS)

Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

High-energy asymmetric supercapacitors based on free-standing hierarchical Co-Mo-S nanosheets with enhanced cycling stability.

PubMed

Balamurugan, Jayaraman; Li, Chao; Peera, Shaik Gouse; Kim, Nam Hoon; Lee, Joong Hee

2017-09-21

Layered transition metal sulfides (TMS) are emerging as advanced materials for energy storage and conversion applications. In this work, we report a facile and cost-effective anion exchange technique to fabricate a layered, multifaceted, free standing, ultra-thin ternary cobalt molybdenum sulfide nanosheet (Co-Mo-S NS) architecture grown on a 3D porous Ni foam substrate. The unique Co-Mo layered double hydroxides are first synthesized as precursors and consequently transformed into ultra-thin Co-Mo-S NS. When employed as an electrode for supercapacitors, the Co-Mo-S NS delivered an ultra-high specific capacitance of 2343 F g -1 at a current density of 1 mA cm -2 with tremendous rate capability and extraordinary cycling performance (96.6% capacitance retention after 20 000 cycles). Furthermore, assembled Co-Mo-S/nitrogen doped graphene nanosheets (NGNS) in an asymmetric supercapacitor (ASC) device delivered an excellent energy density of 89.6 Wh kg -1 , an amazing power density of 20.07 kW kg -1 , and superior cycling performance (86.8% capacitance retention after 50 000 cycles). Such exceptional electrochemical performance of Co-Mo-S NS is ascribed to the good electrical contact with the 3D Ni foam, ultra-high contact area with the electrolyte, and enhanced architectural softening during the charging/discharging process. It is expected that the fabricated, unique, ultra-thin Co-Mo-S NS have great potential for future energy storage devices.

NMR characterization of thin films

DOEpatents

Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2010-06-15

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

NMR characterization of thin films

DOEpatents

Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2008-11-25

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Coupled optical and electrical study of thin-film InGaAs photodetector integrated with surface InP Mie resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Dong; Song, Jiakun; Yu, Hailong

2016-03-14

High-index dielectric and semiconductor nanostructures with characteristics of low absorption loss and artificially controlled scattering properties have grasped an increasing attention for improving the performance of thin-film photovoltaic devices. In this work, combined optical and electrical simulations were performed for thin-film InP/In{sub 0.53}Ga{sub 0.47}As/InP hetero-junction photodetector with periodically arranged InP nano-cylinders in the in-coupling configuration. It is found that the carefully designed InP nano-cylinders possess strongly substrate-coupled Mie resonances and can effectively couple incident light into the guided mode, both of which significantly increase optical absorption. Further study from the electrical aspects shows that enhancement of external quantum efficiency ismore » as high as 82% and 83% in the configurations with the optimized nano-cylinders and the optimized period, respectively. Moreover, we demonstrate that the integration of InP nano-cylinders does not degrade the electrical performance, since the surface recombination is effectively suppressed by separating the absorber layer where carriers generate and the air/semiconductor interface. The comprehensive modeling including optical and electrical perspectives provides a more practical description for device performance than the optical-only simulation and is expected to advance the design of thin-film absorber layer based optoelectronic devices for fast response and high efficiency.« less

Convenient mounting method for electrical measurements of thin samples

NASA Technical Reports Server (NTRS)

Matus, L. G.; Summers, R. L.

1986-01-01

A method for mounting thin samples for electrical measurements is described. The technique is based on a vacuum chuck concept in which the vacuum chuck simultaneously holds the sample and established electrical contact. The mounting plate is composed of a glass-ceramic insulating material and the surfaces of the plate and vacuum chuck are polished. The operation of the vacuum chuck is examined. The contacts on the sample and mounting plate, which are sputter-deposited through metal masks, are analyzed. The mounting method was utilized for van der Pauw measurements.

FDTD modeling of thin impedance sheets

NASA Technical Reports Server (NTRS)

Luebbers, Raymond; Kunz, Karl

1991-01-01

Thin sheets of resistive or dielectric material are commonly encountered in radar cross section calculations. Analysis of such sheets is simplified by using sheet impedances. It is shown that sheet impedances can be modeled easily and accurately using Finite Difference Time Domain (FDTD) methods. These sheets are characterized by a discontinuity in the tangential magnetic field on either side of the sheet but no discontinuity in tangential electric field. This continuity, or single valued behavior of the electric field, allows the sheet current to be expressed in terms of an impedance multiplying this electric field.

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kizu, Takio, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Tsukagoshi, Kazuhito, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya

We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm{sup 2}/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V{sub O}) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recoverymore » in turn-on voltage indicates that the dense V{sub O} in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.« less

Dynamical features and electric field strengths of double layers driven by currents. [in auroras

NASA Technical Reports Server (NTRS)

Singh, N.; Thiemann, H.; Schunk, R. W.

1985-01-01

In recent years, a number of papers have been concerned with 'ion-acoustic' double layers. In the present investigation, results from numerical simulations are presented to show that the shapes and forms of current-driven double layers evolve dynamically with the fluctuations in the current through the plasma. It is shown that double layers with a potential dip can form even without the excitation of ion-acoustic modes. Double layers in two-and one-half-dimensional simulations are discussed, taking into account the simulation technique, the spatial and temporal features of plasma, and the dynamical behavior of the parallel potential distribution. Attention is also given to double layers in one-dimensional simulations, and electrical field strengths predicted by two-and one-half-dimensional simulations.

Optical and electrical properties of TiOPc doped Alq3 thin films

NASA Astrophysics Data System (ADS)

Ramar, M.; Suman, C. K.; Tyagi, Priyanka; Srivastava, R.

2015-06-01

The Titanyl phthalocyanine (TiOPc) was doped in Tris (8-hydroxyquinolinato) aluminum (Alq3) with different concentration. The thin film of optimized doping concentration was studied extensively for optical and electrical properties. The optical properties, studied using ellipsometry, absorption and photoluminescence. The absorption peak of Alq3 and TiOPc was observed at 387 nm and 707 nm and the photo-luminescence intensity (PL) peak of doped thin film was observed at 517 nm. The DC and AC electrical properties of the thin film were studied by current density-voltage (J-V) characteristics and impedance over a frequency range of 100 Hz - 1 MHz. The electron mobility calculated from trap-free space-charge limited region (SCLC) is 0.17×10-5 cm2/Vs. The Cole-Cole plots shows that the TiOPc doped Alq3 thin film can be represented by a single parallel resistance RP and capacitance CP network with a series resistance RS (10 Ω). The value of RP and CP at zero bias was 1587 Ω and 2.568 nF respectively. The resistance RP decreases with applied bias whereas the capacitance CP remains almost constant.

Post-Annealing Effects on Surface Morphological, Electrical and Optical Properties of Nanostructured Cr-Doped CdO Thin Films

NASA Astrophysics Data System (ADS)

Hymavathi, B.; Rajesh Kumar, B.; Subba Rao, T.

2018-01-01

Nanostructured Cr-doped CdO thin films were deposited on glass substrates by reactive direct current magnetron sputtering and post-annealed in vacuum from 200°C to 500°C. X-ray diffraction studies confirmed that the films exhibit cubic nature with preferential orientation along the (111) plane. The crystallite size, lattice parameters, unit cell volume and strain in the films were determined from x-ray diffraction analysis. The surface morphology of the films has been characterized by field emission scanning electron microscopy and atomic force microscopy. The electrical properties of the Cr-doped CdO thin films were measured by using a four-probe method and Hall effect system. The lowest electrical resistivity of 2.20 × 10-4 Ω cm and a maximum optical transmittance of 88% have been obtained for the thin films annealed at 500°C. The optical band gap of the films decreased from 2.77 eV to 2.65 eV with the increase of annealing temperature. The optical constants, packing density and porosity of Cr-doped CdO thin films were also evaluated from the transmittance spectra.

Solid-state nanopore localization by controlled breakdown of selectively thinned membranes

NASA Astrophysics Data System (ADS)

Carlsen, Autumn T.; Briggs, Kyle; Hall, Adam R.; Tabard-Cossa, Vincent

2017-02-01

We demonstrate precise positioning of nanopores fabricated by controlled breakdown (CBD) on solid-state membranes by spatially varying the electric field strength with localized membrane thinning. We show 100 × 100 nm2 precision in standard SiN x membranes (30-100 nm thick) after selective thinning by as little as 25% with a helium ion beam. Control over nanopore position is achieved through the strong dependence of the electric field-driven CBD mechanism on membrane thickness. Confinement of pore formation to the thinned region of the membrane is confirmed by TEM imaging and by analysis of DNA translocations. These results enhance the functionality of CBD as a fabrication approach and enable the production of advanced nanopore devices for single-molecule sensing applications.

Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ong, Hui-Yng; School of Engineering, Nanyang Polytechnic, Singapore 569830; Shrestha, Milan

2015-09-28

Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

Planar multi-electrode array sensor for localized electrochemical corrosion detection

DOEpatents

Tormoen, Garth William; Brossia, Christopher Sean

2014-01-07

A planarized type of coupled multi-electrode corrosion sensing device. Electrode pads are fabricated on a thin backing, such as a thin film. Each pad has an associated electrical lead for connection to auxiliary electronic circuitry, which may include a resistor associated with each electrical pad. The design permits the device to be easily placed in small crevices or under coatings such as paint.

Flexible Thin Metal Film Thermal Sensing System

NASA Technical Reports Server (NTRS)

Thomsen, Donald Laurence (Inventor)

2012-01-01

A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

Characterization of terrestrial solar cells for space applications: Electrical characteristics of thin Westinghouse dendritic web cells as a function of solar intensity, temperature, and incidence angle

NASA Technical Reports Server (NTRS)

Stella, P. M.; Anspaugh, B. E.

1985-01-01

Electrical characteristics of thin (100- and 140-micron) Westinghouse dendritic-web N/P silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. Performance is also shown as a function of solar illlumination angle of incidence for AMO.

Electrical-assisted double side incremental forming and processes thereof

DOEpatents

Roth, John; Cao, Jian

2014-06-03

A process for forming a sheet metal component using an electric current passing through the component is provided. The process can include providing a double side incremental forming machine, the machine operable to perform a plurality of double side incremental deformations on the sheet metal component and also apply an electric direct current to the sheet metal component during at least part of the forming. The direct current can be applied before or after the forming has started and/or be terminated before or after the forming has stopped. The direct current can be applied to any portion of the sheet metal. The electrical assistance can reduce the magnitude of force required to produce a given amount of deformation, increase the amount of deformation exhibited before failure and/or reduce any springback typically exhibited by the sheet metal component.

The enhancement mechanism of thin plasma layer on antenna radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chunsheng, E-mail: wangcs@hit.edu.cn; Jiang, Binhao; Li, Xueai

A model of plasma-antenna is carried out to study the radiation enhancement mechanism of antenna covered by thin plasma layer. The results show when the radiation intensity achieves maximum, a region of equal electric field is formed due to the reflection of electric field at the interface of plasma and air. The plasma layer acted as an extension of the antenna. Furthermore, the shape of plasma layer is changed to verify the effect of plasma boundary on antenna radiation. The study shows the effect of thin plasma layer on electromagnetic field and provides a type of plasma antenna.

Feasibility Study of Thin Film Thermocouple Piles

NASA Technical Reports Server (NTRS)

Sisk, R. C.

2001-01-01

Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

NASA Astrophysics Data System (ADS)

Amma, Shin-ichi; Tokumoto, Yuki; Edagawa, Keiichi; Shibata, Naoya; Mizoguchi, Teruyasu; Yamamoto, Takahisa; Ikuhara, Yuichi

2010-05-01

Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkel-Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study show the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films.

Optical and electrical properties of p-type transparent conducting CuAlO2 thin film synthesized by reactive radio frequency magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Saha, B.; Thapa, R.; Jana, S.; Chattopadhyay, K. K.

2010-10-01

Thin films of p-type transparent conducting CuAlO2 have been synthesized through reactive radio frequency magnetron sputtering on silicon and glass substrates at substrate temperature 300°C. Reactive sputtering of a target fabricated from Cu and Al powder (1:1.5) was performed in Ar+O2 atmosphere. The deposition parameters were optimized to obtain phase pure, good quality CuAlO2 thin films. The films were characterized by studying their structural, morphological, optical and electrical properties.

Electrical compensation by Ga vacancies in Ga2O3 thin films

NASA Astrophysics Data System (ADS)

Korhonen, E.; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

2015-06-01

The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga2O3 thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga2O3 thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In2O3, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as Oi.

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

PubMed Central

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-01-01

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>107A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact. PMID:29112139

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact.

PubMed

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-11-07

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>10⁷A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

High density associative memory

NASA Technical Reports Server (NTRS)

Moopenn, Alexander W. (Inventor); Thakoor, Anilkumar P. (Inventor); Daud, Taher (Inventor); Lambe, John J. (Inventor)

1989-01-01

A multi-layered, thin-film, digital memory having associative recall. There is a first memory matrix and a second memory matrix. Each memory matrix comprises, a first layer comprising a plurality of electrically separated row conductors; a second layer comprising a plurality of electrically separated column conductors intersecting but electrically separated from the row conductors; and, a plurality of resistance elements electrically connected between the row condutors and the column conductors at respective intersections of the row conductors and the column conductors, each resistance element comprising, in series, a first resistor of sufficiently high ohmage to conduct a sensible element current therethrough with virtually no heat-generating power consumption when a low voltage as employed in thin-film applications is applied thereacross and a second resistor of sufficiently high ohmage to conduct no sensible current therethrough when a low voltage as employed in thin-film applications is applied thereacross, the second resistor having the quality of breaking down to create a short therethrough upon the application of a breakdown level voltage across the first and second resistors.

Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which itsmore » resistivity is 5.36 × 10{sup 4} Ωcm{sup −1}. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Electrical properties of Mg doped ZnO nanostructure annealed at different temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohamed, R., E-mail: ruziana12@gmail.com; Mamat, M. H., E-mail: hafiz-030@yahoo.com; Rusop, M., E-mail: nanouitm@gmail.com

In this work, ZincOxide (ZnO) nanostructures doped with Mg were successfully grown on the glass substrate. Magnesium (Mg) metal element was added in the ZnO host which acts as a doping agent. Different temperature in range of 250°C to 500°C was used in order to investigate the effect of annealing temperature of ZnO thin films. Field Emission Scanning Electron Microscopy (FESEM) was used to investigate the physical characteristic of ZnO thin films. FESEM results have revealed that ZnO nanorods were grown vertically aligned. The structural properties were determined by using X-Ray Diffraction (XRD) analysis. XRD results showed Mg doped ZnOmore » thin have highest crystalinnity at 500°C annealing temperature. The electrical properties were investigating by using Current-Voltage (I-V) measurement. I-V measurement showed the electrical properties were varied at different annealing temperature. The annealing temperature at 500°C has the highest electrical conductance properties.« less

Preparation of thin-film (Ba(0.5),Sr(0.5))TiO3 by the laser ablation technique and electrical properties

NASA Astrophysics Data System (ADS)

Yoon, Soon-Gil; Lee, Jai-Chan; Safari, A.

1994-09-01

The chemical composition and electrical properties were investigated for epitaxially crystallized (Ba(0.5),Sr(0.5))TiO3 (BST) films deposited on Pt/MgO and YBa2Cu3O(7-x) (YBCO)/MgO substrates by the laser ablation technique. Rutherford backscattering spectroscopy analysis shows that thin films on Pt/MgO have almost the same stoichiometric composition as the target material. Films deposited at 600 C exhibited an excellent epitaxial growth, a dielectric constant of 430, and a dissipation factor of 0.02 at 10 kHz frequency. They have a charge storage density of 40 fC/sq micron at an applied electric field of 0.15 MV/cm. Leakage current density of BST thin films on Pt/MgO was smaller than on YBCO/MgO. Their leakage current density is about 0.8 microA/sq cm at an applied electric field of 0.15 MV/cm.

Disorder induced magnetism and electrical conduction in La doped Ca2FeMoO6 double perovskite

NASA Astrophysics Data System (ADS)

Poddar, Asok; Bhowmik, R. N.; Muthuselvam, I. Panneer

2010-11-01

We report the magnetism and electrical transport properties of La doped Ca2FeMoO6 double perovskite. Reduction in magnetic moment, nonmonotonic variation in magnetic ordering temperature (TC), increasing magnetic hardness, low temperature resistivity upturn, and loss of metallic conductivity are some of the major changes that we observed due to La doping induced disorder in double perovskite structure. The increase in magnetic disorder in La doped samples and its effect on TC is more consistent with the mean field theory. The modification in electronic band structure due to La doping is understood by establishing a correlation between the temperature dependence of electrical conductivity and thermoelectric power.

Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer

PubMed Central

Zhang, Zhaojing; Yao, Liyong; Bi, Jinlian; Gao, Shoushuai; Gao, Qing; Jeng, Ming‐Jer; Sun, Guozhong; Zhou, Zhiqiang; He, Qing; Sun, Yun

2017-01-01

Abstract Double layer distribution exists in Cu2SnZnSe4 (CZTSe) thin films prepared by selenizing the metallic precursors, which will degrade the back contact of Mo substrate to absorber layer and thus suppressing the performance of solar cell. In this work, the double‐layer distribution of CZTSe film is eliminated entirely and the formation of MoSe2 interfacial layer is inhibited successfully. CZTSe film is prepared by selenizing the precursor deposited by electrodeposition method under Se and SnSex mixed atmosphere. It is found that the insufficient reaction between ZnSe and Cu‐Sn‐Se phases in the bottom of the film is the reason why the double layer distribution of CZTSe film is formed. By increasing Sn content in the metallic precursor, thus making up the loss of Sn because of the decomposition of CZTSe and facilitate the diffusion of liquid Cu2Se, the double layer distribution is eliminated entirely. The crystallization of the formed thin film is dense and the grains go through the entire film without voids. And there is no obvious MoSe2 layer formed between CZTSe and Mo. As a consequence, the series resistance of the solar cell reduces significantly to 0.14 Ω cm2 and a CZTSe solar cell with efficiency of 7.2% is fabricated. PMID:29610727

Design and characterization of MEMS interferometric sensing

NASA Astrophysics Data System (ADS)

Snyder, R.; Siahmakoun, A.

2010-02-01

A MEMS-based interferometric sensor is produced using the multi-user MEMS processing standard (MUMPS) micromirrors, movable by thermal actuation. The interferometer is comprised of gold reflection surfaces, polysilicon thermal actuators, hinges, latches and thin film polarization beam splitters. A polysilicon film of 3.5 microns reflects and transmits incident polarized light from an external laser source coupled to a multi-mode optical fiber. The input beam is shaped to a diameter of 10 to 20 microns for incidence upon the 100 micron mirrors. Losses in the optical path include diffraction effects from etch holes created in the manufacturing process, surface roughness of both gold and polysilicon layers, and misalignment of micro-scale optical components. Numerous optical paths on the chip vary by length, number of reflections, and mirror subsystems employed. Subsystems include thermal actuator batteries producing lateral position displacement, angularly tunable mirrors, double reflection surfaces, and static vertical mirrors. All mirror systems are raised via manual stimulation using two micron, residue-free probe tips and some may be aligned using electrical signals causing resistive heating in thermal actuators. The characterization of thermal actuator batteries includes maximum displacement, deflection, and frequency response that coincides with theoretical thermodynamic simulations using finite-element analysis. Maximum deflection of 35 microns at 400 mW input electrical power is shown for three types of actuator batteries as is deflection dependent frequency response data for electrical input signals up to 10 kHz.

Electro-osmotic flow in a rotating rectangular microchannel

PubMed Central

Ng, Chiu-On; Qi, Cheng

2015-01-01

An analytical model is presented for low-Rossby-number electro-osmotic flow in a rectangular channel rotating about an axis perpendicular to its own. The flow is driven under the combined action of Coriolis, pressure, viscous and electric forces. Analytical solutions in the form of eigenfunction expansions are developed for the problem, which is controlled by the rotation parameter (or the inverse Ekman number), the Debye parameter, the aspect ratio of the channel and the distribution of zeta potentials on the channel walls. Under the conditions of fast rotation and a thin electric double layer (EDL), an Ekman–EDL develops on the horizontal walls. This is essentially an Ekman layer subjected to electrokinetic effects. The flow structure of this boundary layer as a function of the Ekman layer thickness normalized by the Debye length is investigated in detail in this study. It is also shown that the channel rotation may have qualitatively different effects on the flow rate, depending on the channel width and the zeta potential distributions. Axial and secondary flows are examined in detail to reveal how the development of a geostrophic core may lead to a rise or fall of the mean flow. PMID:26345088

Core design of a direct-cycle, supercritical-water-cooled fast breeder reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jevremovic, T.; Oka, Yoshiaki; Koshizuka, Seiichi

1994-10-01

The conceptual design of a direct-cycle fast breeder reactor (FBR) core cooled by supercritical water is carried out as a step toward a low-cost FBR plant. The supercritical water does not exhibit change of phase. The turbines are directly driven by the core outlet coolant. In comparison with a boiling water reactor (BWR), the recirculation systems, steam separators, and dryers are eliminated. The reactor system is much simpler than the conventional steam-cooled FBRs, which adopted Loeffler boilers and complicated coolant loops for generating steam and separating it from water. Negative complete and partial coolant void reactivity are provided without muchmore » deterioration in the breeding performances by inserting thin zirconium-hydride layers between the seeds and blankets in a radially heterogeneous core. The net electric power is 1245 MW (electric). The estimated compound system doubling time is 25 yr. The discharge burnup is 77.7 GWd/t, and the refueling period is 15 months with a 73% load factor. The thermal efficiency is high (41.5%), an improvement of 24% relative to a BWR's. The pressure vessel is not thick at 30.3 cm.« less

Auroral magnetosphere-ionosphere coupling: A brief topical review

NASA Technical Reports Server (NTRS)

Chiu, Y. T.; Schulz, M.; Cornwall, J. M.

1979-01-01

Auroral arcs result from the acceleration and precipitation of magnetospheric plasma in narrow regions characterized by strong electric fields both perpendicular and parallel to the earth's magnetic field. The various mechanisms that were proposed for the origin of such strong electric fields are often complementary Such mechanisms include: (1) electrostatic double layers; (2) double reverse shock; (3) anomalous resistivity; (4) magnetic mirroring of hot plasma; and (5) mapping of the magnetospheric-convection electric field through an auroral discontinuity.

Performance analysis of SiGe double-gate N-MOSFET

NASA Astrophysics Data System (ADS)

Singh, A.; Kapoor, D.; Sharma, R.

2017-04-01

The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate (SG) MOSFETs but also provides the better replacement for future technology. In this paper, the electrical characteristics of SiGe double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si double-gate N-MOSFET. Furthermore, in this paper the electrical characteristics of Si double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si single-gate N-MOSFET. The simulations are carried out for the device at different operational voltages using Cogenda Visual TCAD tool. Moreover, we have designed its structure and studied both {I}{{d}}{-}{V}{{g}} characteristics for different voltages namely 0.05, 0.1, 0.5, 0.8, 1 and 1.5 V and {I}{{d}}{-}{V}{{d}} characteristics for different voltages namely 0.1, 0.5, 1 and 1.5 V at work functions 4.5, 4.6 and 4.8 eV for this structure. The performance parameters investigated in this paper are threshold voltage, DIBL, subthreshold slope, GIDL, volume inversion and MMCR.

Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method

PubMed Central

Rolin, Cedric; Kang, Enpu; Lee, Jeong-Hwan; Borghs, Gustaaf; Heremans, Paul; Genoe, Jan

2017-01-01

Thin film transistors based on high-mobility organic semiconductors are prone to contact problems that complicate the interpretation of their electrical characteristics and the extraction of important material parameters such as the charge carrier mobility. Here we report on the gated van der Pauw method for the simple and accurate determination of the electrical characteristics of thin semiconducting films, independently from contact effects. We test our method on thin films of seven high-mobility organic semiconductors of both polarities: device fabrication is fully compatible with common transistor process flows and device measurements deliver consistent and precise values for the charge carrier mobility and threshold voltage in the high-charge carrier density regime that is representative of transistor operation. The gated van der Pauw method is broadly applicable to thin films of semiconductors and enables a simple and clean parameter extraction independent from contact effects. PMID:28397852

Electrical and structural properties of TiO2-δ thin film with oxygen vacancies prepared by RF magnetron sputtering using oxygen radical

NASA Astrophysics Data System (ADS)

Kawamura, Kinya; Suzuki, Naoya; Tsuchiya, Takashi; Shimazu, Yuichi; Minohara, Makoto; Kobayashi, Masaki; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

2016-06-01

Anatase TiO2-δ thin film was prepared by RF magnetron sputtering using oxygen radical and Ti-metal target. Degrees of the TiO2-δ crystal orientation in the thin film depends of the oxygen gas pressure (P\\text{O2}) in the radical gun. The (004)- and (112)-oriented TiO2-δ thin films crystallized without postannealing have the mixed valence Ti4+/Ti3+ state. The electrical conductivities, which corresponds to n-type oxide semiconductor, is higher in the case of (004)-oriented TiO2-δ thin film containing with high concentration of oxygen vacancy. The donor band of TiO2-δ thin film is observed at ˜1.0 eV from the Fermi level (E F). The density-of-state at E F is higher in (004)-oriented TiO2-δ thin film. The above results indicate that the oxygen vacancies can control by changing the P\\text{O2} of the oxygen radical.

A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

NASA Astrophysics Data System (ADS)

Adelifard, Mehdi; Darudi, Hosein

2016-07-01

There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

NASA Astrophysics Data System (ADS)

Radha, R.; Sakthivelu, A.; Pradhabhan, D.

2016-08-01

Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

Switchable silver mirrors with long memory effects.

PubMed

Park, Chihyun; Seo, Seogjae; Shin, Haijin; Sarwade, Bhimrao D; Na, Jongbeom; Kim, Eunkyoung

2015-01-01

An electrochemically stable and bistable switchable mirror was achieved for the first time by introducing (1) a thiol-modified indium tin oxide (ITO) electrode for the stabilization of the metallic film and (2) ionic liquids as an anion-blocking layer, to achieve a long memory effect. The growth of the metallic film was denser and faster at the thiol-modified ITO electrode than at a bare ITO electrode. The electrochemical stability of the metallic film on the thiol-modified ITO was enhanced, maintaining the metallic state without rupture. In the voltage-off state, the metal film maintained bistability for a long period (>2 h) when ionic liquids were introduced as electrolytes for the switchable mirror. The electrical double layer in the highly viscous ionic liquid electrolyte seemed to effectively form a barrier to the bromide ions, to protect the metal thin film from them when in the voltage-off state.

Volume Averaging Study of the Capacitive Deionization Process in Homogeneous Porous Media

DOE PAGES

Gabitto, Jorge; Tsouris, Costas

2015-05-05

Ion storage in porous electrodes is important in applications such as energy storage by supercapacitors, water purification by capacitive deionization, extraction of energy from a salinity difference and heavy ion purification. In this paper, a model is presented to simulate the charge process in homogeneous porous media comprising big pores. It is based on a theory for capacitive charging by ideally polarizable porous electrodes without faradaic reactions or specific adsorption of ions. A volume averaging technique is used to derive the averaged transport equations in the limit of thin electrical double layers. Transport between the electrolyte solution and the chargedmore » wall is described using the Gouy–Chapman–Stern model. The effective transport parameters for isotropic porous media are calculated solving the corresponding closure problems. Finally, the source terms that appear in the average equations are calculated using numerical computations. An alternative way to deal with the source terms is proposed.« less

Notched strength of beryllium powder and ingot sheets.

NASA Technical Reports Server (NTRS)

Moss, R. G.

1972-01-01

The effects of notches in thin beryllium sheets were studied as functions of material variables and notch severity. Double edge notched samples having stress concentration factors of 1.0 to 15.4 were prepared by milling to size, etching, and electrical discharge machining the notches. Strength was not reduced greatly by sharp notches, and duller notches were more deleterious than sharp notches. The trend was for reduced strength for dull notches, increased strength for sharper notches, and reduced strength for very sharp notches. Differences in material purity or source of the sheet had little affect on notch sensitivity. The most important factors appear to be oxide content and directionality of the sheet microstructure; high oxide content and highly directional microstructure tend to give more notch sensitivity than low oxide content, and more bidirectional microstructure. Postulated causes of the change in notched/unnotched strength are given.

Over-limiting Current and Control of Dendritic Growth by Surface Conduction in Nanopores

PubMed Central

Han, Ji-Hyung; Khoo, Edwin; Bai, Peng; Bazant, Martin Z.

2014-01-01

Understanding over-limiting current (faster than diffusion) is a long-standing challenge in electrochemistry with applications in desalination and energy storage. Known mechanisms involve either chemical or hydrodynamic instabilities in unconfined electrolytes. Here, it is shown that over-limiting current can be sustained by surface conduction in nanopores, without any such instabilities, and used to control dendritic growth during electrodeposition. Copper electrodeposits are grown in anodized aluminum oxide membranes with polyelectrolyte coatings to modify the surface charge. At low currents, uniform electroplating occurs, unaffected by surface modification due to thin electric double layers, but the morphology changes dramatically above the limiting current. With negative surface charge, growth is enhanced along the nanopore surfaces, forming surface dendrites and nanotubes behind a deionization shock. With positive surface charge, dendrites avoid the surfaces and are either guided along the nanopore centers or blocked from penetrating the membrane. PMID:25394685

Maximum screening fields of superconducting multilayer structures

DOE PAGES

Gurevich, Alex

2015-01-07

Here, it is shown that a multilayer comprised of alternating thin superconducting and insulating layers on a thick substrate can fully screen the applied magnetic field exceeding the superheating fields H s of both the superconducting layers and the substrate, the maximum Meissner field is achieved at an optimum multilayer thickness. For instance, a dirty layer of thickness ~0.1 μm at the Nb surface could increase H s ≃ 240 mT of a clean Nb up to H s ≃ 290 mT. Optimized multilayers of Nb 3Sn, NbN, some of the iron pnictides, or alloyed Nb deposited onto the surfacemore » of the Nb resonator cavities could potentially double the rf breakdown field, pushing the peak accelerating electric fields above 100 MV/m while protecting the cavity from dendritic thermomagnetic avalanches caused by local penetration of vortices.« less

Awards to Boost Research into Cheaper Solar Electricity

Science.gov Websites

Awards to Boost Research into Cheaper Solar Electricity For more information contact: George thin-film photovoltaic cells. Photovoltaics (solar cells) generate electricity directly from sunlight cut the cost of solar electricity," said Energy Secretary Spencer Abraham. "With lowered

Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source.

PubMed

Kim, Ki Seok; Kim, Ki Hyun; Ji, You Jin; Park, Jin Woo; Shin, Jae Hee; Ellingboe, Albert Rogers; Yeom, Geun Young

2017-10-19

Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. In this study, the authors investigated depositing thin, high-quality SiN x film on organic-based electronic devices, specifically, very high-frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source with a gas mixture of NH 3 /SiH 4 at a low temperature of 80 °C. The thin deposited SiN x film exhibited excellent properties in the stoichiometry, chemical bonding, stress, and step coverage. Thin film quality and plasma damage were investigated by the water vapor transmission rate (WVTR) and by electrical characteristics of organic light-emitting diode (OLED) devices deposited with SiN x , respectively. The thin deposited SiN x film exhibited a low WVTR of 4.39 × 10 -4  g (m 2 · day) -1 for a single thin (430 nm thick) film SiN x and the electrical characteristics of OLED devices before and after the thin SiN x film deposition on the devices did not change, which indicated no electrical damage during the deposition of SiN x on the OLED device.

Thickness and microstructure effects in the optical and electrical properties of silver thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel

The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅more » fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.« less

Enhancement on crystallinity property of low annealed PbTiO3 thin films for metal-insulator-metal capacitor

NASA Astrophysics Data System (ADS)

Nurbaya, Z.; Wahid, M. H.; Rozana, M. D.; Alrokayan, S. A. H.; Khan, H. A.; Rusop, M.

2018-05-01

This study presents the investigation on crystallinity property of PbTiO3 thin films towards metal-insulator-metal capacitor device fabrication. The preparation of the thin films utilizes sol-gel spin coating method with low annealing temperature effect. Hence, structural and electrical characterization is brought to justify the thin films consistency.

Optical and electrical responses of magnetron-sputtered amorphous Nb-doped TiO2 thin films annealed at low temperature

NASA Astrophysics Data System (ADS)

Quynh, Luu Manh; Tien, Nguyen Thi; Thanh, Pham Van; Hieu, Nguyen Minh; Doanh, Sai Cong; Thuat, Nguyen Tran; Tuyen, Nguyen Viet; Luong, Nguyen Hoang; Hoang, Ngoc Lam Huong

2018-03-01

Nb-doped TiO2 (TNO) thin films were prepared by annealing at 300 °C for 30 min after a magnetron-sputter process. A laser-irradiated post-annealing Raman scattering analysis indirectly showed the possible formation of small size anatase TNO clusters within the thin film matrix Although the TNO thin films were not crystallized, oxygen vacancies were created by adding H2 into the sputter gas during the deposition process. This improved the conductivity and carrier concentration of the thin films. As the ratio of H2 in sputter gas is f(H2) = [H2/Ar+H2] = 10%, the carrier concentration of the amorphous TNO thin film reached 1022 (cm-3) with the resistivity being about 10-2 (Ω.cm). Even though a new methodology to decrease the fabrication temperature is not presented; this study demonstrates an efficient approach to shorten the annealing process, which ends prior to the crystallization of the thin films. Besides, in situ H2 addition into the sputter atmosphere is proven to be a good solution to enhance the electrical conductivity of semiconductor thin films like TNOs, despite the fact that they are not well crystallized.

Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

NASA Astrophysics Data System (ADS)

Cheemadan, Saheer; Santhosh Kumar, M. C.

2018-04-01

Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

Investigation of surface charge density on solid-liquid interfaces by modulating the electrical double layer.

PubMed

Moon, Jong Kyun; Song, Myung Won; Pak, Hyuk Kyu

2015-05-20

A solid surface in contact with water or aqueous solution usually carries specific electric charges. These surface charges attract counter ions from the liquid side. Since the geometry of opposite charge distribution parallel to the solid-liquid interface is similar to that of a capacitor, it is called an electrical double layer capacitor (EDLC). Therefore, there is an electrical potential difference across an EDLC in equilibrium. When a liquid bridge is formed between two conducting plates, the system behaves as two serially connected EDLCs. In this work, we propose a new method for investigating the surface charge density on solid-liquid interfaces. By mechanically modulating the electrical double layers and simultaneously applying a dc bias voltage across the plates, an ac electric current can be generated. By measuring the voltage drop across a load resistor as a function of bias voltage, we can study the surface charge density on solid-liquid interfaces. Our experimental results agree very well with the simple equivalent electrical circuit model proposed here. Furthermore, using this method, one can determine the polarity of the adsorbed state on the solid surface depending on the material used. We expect this method to aid in the study of electrical phenomena on solid-liquid interfaces.

Numerical modeling of heat transfer during hydrogen absorption in thin double-layered annular ZrCo beds

NASA Astrophysics Data System (ADS)

Cui, Yehui; Zeng, Xiangguo; Kou, Huaqin; Ding, Jun; Wang, Fang

2018-06-01

In this work a three-dimensional (3D) hydrogen absorption model was proposed to study the heat transfer behavior in thin double-layered annular ZrCo beds. Numerical simulations were performed to investigate the effects of conversion layer thickness, thermal conductivity, cooling medium and its flow velocity on the efficiency of heat transfer. Results reveal that decreasing the layer thickness and improving the thermal conductivity enhance the ability of heat transfer. Compared with nitrogen and helium, water appears to be a better medium for cooling. In order to achieve the best efficiency of heat transfer, the flow velocity needs to be maximized.

Theoretical investigations on a class of double-focus planar lens on the anisotropic material

NASA Astrophysics Data System (ADS)

Bozorgi, Mahdieh; Atlasbaf, Zahra

2017-05-01

We study a double-focus lens constituted of V-shaped plasmonic nano-antennas (VSPNAs) on the anisotropic TiO2 thin film. The phase and amplitude variations of cross-polarized scattered wave from a unit cell are computed by the developed fast Method of Moments (MoM) in which the dyadic Green's function is evaluated with the transmission line model in the spectral domain. Using the calculated phase and amplitude diagrams, a double-focus lens on the anisotropic thin film is designed in 2 μm. To validate the numerical results, the designed lens is analysed using a full-wave EM-solver. The obtained results show a tunable asymmetric behavior in the focusing intensity of the focal spots for different incident polarizations. It is shown that changing the thickness of anisotropic thin film leads to the changing in such an asymmetric behavior and also the intensity ratio of two focal spots. In addition, the lens performance is examined in the broadband wavelength range from 1.76 to 2.86 μm. It is achieved that the increasing the wavelength leads to decreasing the focal distances of the designed lens and increasing its numerical aperture (NA).

Electric field mediated breakdown of thin liquid films separating microscopic emulsion droplets

NASA Astrophysics Data System (ADS)

Mostowfi, Farshid; Khristov, Khristo; Czarnecki, Jan; Masliyah, Jacob; Bhattacharjee, Subir

2007-04-01

The authors present a microfluidic technique for electrically induced breakup of thin films formed between microscopic emulsion droplets. The method involves creating a stationary film at the intersection of two microchannels etched onto a glass substrate. After stabilizing the film, a ramped potential is applied across it. The electrical stresses developed at the film interfaces lead to its rupture above a threshold potential. The potential difference at which the film ruptures assesses the film stability. This approach is employed to demonstrate how surfactant (lecithin) adsorption imparts stability to an ultrathin oil film formed between two water droplets.

Surface topography and electrical properties in Sr2FeMoO6 films studied at cryogenic temperatures

NASA Astrophysics Data System (ADS)

Angervo, I.; Saloaro, M.; Mäkelä, J.; Lehtiö, J.-P.; Huhtinen, H.; Paturi, P.

2018-03-01

Pulsed laser deposited Sr2FeMoO6 thin films were investigated for the first time with scanning tunneling microscopy and spectroscopy. The results confirm atomic scale layer growth, with step-terrace structure corresponding to a single lattice cell scale. The spectroscopy research reveals a distribution of local electrical properties linked to structural deformation in the initial thin film layers at the film substrate interface. Significant hole structure giving rise to electrically distinctive regions in thinner film also seems to set a thickness limit for the thinnest films to be used in applications.

Resistance switching in polyvinylidene fluoride (PVDF) thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pramod, K.; Sahu, Binaya Kumar; Gangineni, R. B., E-mail: rameshg.phy@pondiuni.edu.in

2015-06-24

Polyvinylidene fluoride (PDVF), one of the best electrically active polymer material & an interesting candidate to address the electrical control of its functional properties like ferroelectricity, piezoelectricity, pyroelectricity etc. In the current work, with the help of spin coater and DC magnetron sputtering techniques, semi-crystallized PVDF thin films prominent in alpha phase is prepared in capacitor like structure and their electrical characterization is emphasized. In current-voltage (I-V) and resistance-voltage (R-V) measurements, clear nonlinearity and resistance switching has been observed for films prepared using 7 wt% 2-butanone and 7 wt% Dimethyl Sulfoxide (DMSO) solvents.

Strain-engineered inverse charge-funnelling in layered semiconductors.

PubMed

De Sanctis, Adolfo; Amit, Iddo; Hepplestone, Steven P; Craciun, Monica F; Russo, Saverio

2018-04-25

The control of charges in a circuit due to an external electric field is ubiquitous to the exchange, storage and manipulation of information in a wide range of applications. Conversely, the ability to grow clean interfaces between materials has been a stepping stone for engineering built-in electric fields largely exploited in modern photovoltaics and opto-electronics. The emergence of atomically thin semiconductors is now enabling new ways to attain electric fields and unveil novel charge transport mechanisms. Here, we report the first direct electrical observation of the inverse charge-funnel effect enabled by deterministic and spatially resolved strain-induced electric fields in a thin sheet of HfS 2 . We demonstrate that charges driven by these spatially varying electric fields in the channel of a phototransistor lead to a 350% enhancement in the responsivity. These findings could enable the informed design of highly efficient photovoltaic cells.

Grid-Free 2D Plasma Simulations of the Complex Interaction Between the Solar Wind and Small, Near-Earth Asteroids

NASA Technical Reports Server (NTRS)

Zimmerman, M. I.; Farrell, W. M.; Poppe, A. R.

2014-01-01

We present results from a new grid-free 2D plasma simulation code applied to a small, unmagnetized body immersed in the streaming solar wind plasma. The body was purposely modeled as an irregular shape in order to examine photoemission and solar wind plasma flow in high detail on the dayside, night-side, terminator and surface-depressed 'pocket' regions. Our objective is to examine the overall morphology of the various plasma interaction regions that form around a small body like a small near-Earth asteroid (NEA). We find that the object obstructs the solar wind flow and creates a trailing wake region downstream, which involves the interplay between surface charging and ambipolar plasma expansion. Photoemission is modeled as a steady outflow of electrons from illuminated portions of the surface, and under direct illumination the surface forms a non-monotonic or ''double-sheath'' electric potential upstream of the body, which is important for understanding trajectories and equilibria of lofted dust grains in the presence of a complex asteroid geometry. The largest electric fields are found at the terminators, where ambipolar plasma expansion in the body-sized night-side wake merges seamlessly with the thin photoelectric sheath on the dayside. The pocket regions are found to be especially complex, with nearby sunlit regions of positive potential electrically connected to unlit negative potentials and forming adjacent natural electric dipoles. For objects near the surface, we find electrical dissipation times (through collection of local environmental solar wind currents) that vary over at least 5 orders of magnitude: from 39 Micro(s) inside the near-surface photoelectron cloud under direct sunlight to less than 1 s inside the particle-depleted night-side wake and shadowed pocket regions

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

NASA Astrophysics Data System (ADS)

Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

2013-04-01

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

Detecting Super-Thin Clouds With Polarized Light

NASA Technical Reports Server (NTRS)

Sun, Wenbo; Videen, Gorden; Mishchenko, Michael I.

2014-01-01

We report a novel method for detecting cloud particles in the atmosphere. Solar radiation backscattered from clouds is studied with both satellite data and a radiative transfer model. A distinct feature is found in the angle of linear polarization of solar radiation that is backscattered from clouds. The dominant backscattered electric field from the clear-sky Earth-atmosphere system is nearly parallel to the Earth surface. However, when clouds are present, this electric field can rotate significantly away from the parallel direction. Model results demonstrate that this polarization feature can be used to detect super-thin cirrus clouds having an optical depth of only 0.06 and super-thin liquid water clouds having an optical depth of only 0.01. Such clouds are too thin to be sensed using any current passive satellite instruments.

Detecting Super-Thin Clouds with Polarized Sunlight

NASA Technical Reports Server (NTRS)

Sun, Wenbo; Videen, Gorden; Mishchenko, Michael I.

2014-01-01

We report a novel method for detecting cloud particles in the atmosphere. Solar radiation backscattered from clouds is studied with both satellite data and a radiative transfer model. A distinct feature is found in the angle of linear polarization of solar radiation that is backscattered from clouds. The dominant backscattered electric field from the clear-sky Earth-atmosphere system is nearly parallel to the Earth surface. However, when clouds are present, this electric field can rotate significantly away from the parallel direction. Model results demonstrate that this polarization feature can be used to detect super-thin cirrus clouds having an optical depth of only 0.06 and super-thin liquid water clouds having an optical depth of only 0.01. Such clouds are too thin to be sensed using any current passive satellite instruments.

Measurements of thermal conductivity and the coefficient of thermal expansion for polysilicon thin films by using double-clamped beams

NASA Astrophysics Data System (ADS)

Liu, Haiyun; Wang, Lei

2018-01-01

In this paper, a test structure for simultaneously determining thermal conductivity and the coefficient of thermal expansion (CTE) of polysilicon thin film is proposed. The test structure consists of two double-clamped beams with different lengths. A theoretical model for extracting thermal conductivity and CTE based on electrothermal analysis and resonance frequency approach is developed. Both flat and buckled beams are considered in the theoretical model. The model is confirmed by finite element software ANSYS. The test structures are fabricated by surface micromachined fabrication process. Experiments are carried out in our atmosphere. Thermal conductivity and CTE of polysilicon thin film are obtained to be (29.96  ±  0.92) W · m · K-1 and (2.65  ±  0.03)  ×  10-6 K-1, respectively, with temperature ranging from 300-400 K.

Electron transport in electrically biased inverse parabolic double-barrier structure

NASA Astrophysics Data System (ADS)

M, Bati; S, Sakiroglu; I, Sokmen

2016-05-01

A theoretical study of resonant tunneling is carried out for an inverse parabolic double-barrier structure subjected to an external electric field. Tunneling transmission coefficient and density of states are analyzed by using the non-equilibrium Green’s function approach based on the finite difference method. It is found that the resonant peak of the transmission coefficient, being unity for a symmetrical case, reduces under the applied electric field and depends strongly on the variation of the structure parameters.

Micro-Machined Thin Film Sensor Arrays For The Detection Of H2, Containing Gases, And Method Of Making And Using The Same.

DOEpatents

DiMeo, Jr., Frank; Baum, Thomas H.

2003-07-22

The present invention provides a hydrogen sensor including a thin film sensor element formed by metal organic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a micro-hotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magneto resistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen permeable barrier may comprise species to scavenge oxygen and other like species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

Temperature Dependent Resistivity and Hall Effect in Proton Irradiated CdS Thin Films

NASA Astrophysics Data System (ADS)

Guster, B.; Ghenescu, V.; Ion, L.; Radu, A.; Porumb, O.; Antohe, S.

2011-10-01

Cadmium sulphide finds extensive applications in a variety of optoelectronic devices. In particular, CdS thin films are suitable for use as windows in heterojunction solar cells that employ CdTe, Cu2S or CuInSe2 as an absorber. Such thin film based solar cells are well suited for use in space technology. For that specific application, it is important to know how ionizing radiations alter their performance. We have investigated the effects of irradiation with high energy protons (3 MeV), at 1014 fluency, on electrical properties of polycrystalline CdS thin layers. The samples were prepared by thermal vacuum deposition from single source onto optical glass substrate. Temperature dependent electrical resistivity and Hall effect, before and after irradiation, were recorded from 300 K down to 4 K. The experimental results can be explained in the frame of a two-band model. Above 100 K electrical properties are controlled by a defect level of donor type, with an ionization energy of about 0.060 eV. The possible origin of this defect is discussed.

Reversible tuning of magnetocaloric Ni-Mn-Ga-Co films on ferroelectric PMN-PT substrates.

PubMed

Schleicher, Benjamin; Niemann, Robert; Schwabe, Stefan; Hühne, Ruben; Schultz, Ludwig; Nielsch, Kornelius; Fähler, Sebastian

2017-10-31

Tuning functional properties of thin caloric films by mechanical stress is currently of high interest. In particular, a controllable magnetisation or transition temperature is desired for improved usability in magnetocaloric devices. Here, we present results of epitaxial magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg 1/3 Nb 2/3 ) 0.72 Ti 0.28 O 3 (PMN-PT) substrates. Utilizing X-ray diffraction measurements, we demonstrate that the strain induced in the substrate by application of an electric field can be transferred to the thin film, resulting in a change of the lattice parameters. We examined the consequences of this strain on the magnetic properties of the thin film by temperature- and electric field-dependent measurements. We did not observe a change of martensitic transformation temperature but a reversible change of magnetisation within the austenitic state, which we attribute to the intrinsic magnetic instability of this metamagnetic Heusler alloy. We demonstrate an electric field-controlled entropy change of about 31 % of the magnetocaloric effect - without any hysteresis.

Simultaneous control of thermoelectric properties in p- and n-type materials by electric double-layer gating: New design for thermoelectric device

NASA Astrophysics Data System (ADS)

Takayanagi, Ryohei; Fujii, Takenori; Asamitsu, Atsushi

2015-05-01

We report a novel design of a thermoelectric device that can control the thermoelectric properties of p- and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as the positive and negative electrodes of the electric double-layer capacitor structure. When a gate voltage was applied between the two electrodes, holes and electrons accumulated on the surfaces of Cu2O and ZnO, respectively. The thermopower was measured by applying a thermal gradient along the accumulated layer on the electrodes. We demonstrate here that the accumulated layers worked as a p-n pair of the thermoelectric device.

Strategy for improved frequency response of electric double-layer capacitors

NASA Astrophysics Data System (ADS)

Wada, Yoshifumi; Pu, Jiang; Takenobu, Taishi

2015-10-01

We propose a strategy for improving the response speed of electric double-layer capacitors (EDLCs) and electric double-layer transistors (EDLTs), based on an asymmetric structure with differently sized active materials and gate electrodes. We validate the strategy analytically by a classical calculation and experimentally by fabricating EDLCs with asymmetric Au electrodes (1:50 area ratio and 7.5 μm gap distance). The performance of the EDLCs is compared with that of conventional symmetric EDLCs. Our strategy dramatically improved the cut-off frequency from 14 to 93 kHz and this improvement is explained by fast charging of smaller electrodes. Therefore, this approach is particularly suitable to EDLTs, potentially expanding the applicability to medium speed (kHz-MHz) devices.

Reversible Heating in Electric Double Layer Capacitors

NASA Astrophysics Data System (ADS)

Janssen, Mathijs; van Roij, René

2017-03-01

A detailed comparison is made between different viewpoints on reversible heating in electric double layer capacitors. We show in the limit of slow charging that a combined Poisson-Nernst-Planck and heat equation, first studied by d'Entremont and Pilon [J. Power Sources 246, 887 (2014), 10.1016/j.jpowsour.2013.08.024], recovers the temperature changes as predicted by the thermodynamic identity of Janssen et al. [Phys. Rev. Lett. 113, 268501 (2014), 10.1103/PhysRevLett.113.268501], and disagrees with the approximative model of Schiffer et al. [J. Power Sources 160, 765 (2006), 10.1016/j.jpowsour.2005.12.070] that predominates the literature. The thermal response to the adiabatic charging of supercapacitors contains information on electric double layer formation that has remained largely unexplored.

How voltage drops are manifested by lithium ion configurations at interfaces and in thin films on battery electrodes

DOE PAGES

Leung, Kevin; Leenheer, Andrew Jay

2015-04-09

Battery electrode surfaces are generally coated with electronically insulating solid films of thickness 1-50 nm. Both electrons and Li + can move at the electrode–surface film interface in response to the voltage, which adds complexity to the “electric double layer” (EDL). We also apply Density Functional Theory (DFT) to investigate how the applied voltage is manifested as changes in the EDL at atomic length scales, including charge separation and interfacial dipole moments. Illustrating examples include Li 3PO 4, Li 2CO 3, and Li xMn 2O 4 thin films on Au(111) surfaces under ultrahigh vacuum conditions. Adsorbed organic solvent molecules canmore » strongly reduce voltages predicted in vacuum. We propose that manipulating surface dipoles, seldom discussed in battery studies, may be a viable strategy to improve electrode passivation. We also distinguish the computed potential governing electrons, which is the actual or instantaneous voltage, and the “lithium cohesive energy”-based voltage governing Li content widely reported in DFT calculations, which is a slower-responding self-consistency criterion at interfaces. Furthermore, this distinction is critical for a comprehensive description of electrochemical activities on electrode surfaces, including Li + insertion dynamics, parasitic electrolyte decomposition, and electrodeposition at overpotentials.« less

Graphene Nanopore Support System for Simultaneous High-Resolution AFM Imaging and Conductance Measurements

PubMed Central

2015-01-01

Accurately defining the nanoporous structure and sensing the ionic flow across nanoscale pores in thin films and membranes has a wide range of applications, including characterization of biological ion channels and receptors, DNA sequencing, molecule separation by nanoparticle films, sensing by block co-polymers films, and catalysis through metal–organic frameworks. Ionic conductance through nanopores is often regulated by their 3D structures, a relationship that can be accurately determined only by their simultaneous measurements. However, defining their structure–function relationships directly by any existing techniques is still not possible. Atomic force microscopy (AFM) can image the structures of these pores at high resolution in an aqueous environment, and electrophysiological techniques can measure ion flow through individual nanoscale pores. Combining these techniques is limited by the lack of nanoscale interfaces. We have designed a graphene-based single-nanopore support (∼5 nm thick with ∼20 nm pore diameter) and have integrated AFM imaging and ionic conductance recording using our newly designed double-chamber recording system to study an overlaid thin film. The functionality of this integrated system is demonstrated by electrical recording (<10 pS conductance) of suspended lipid bilayers spanning a nanopore and simultaneous AFM imaging of the bilayer. PMID:24581087

Transport Properties of Anatase-TiO2 Polycrystalline-Thin-Film Field-Effect Transistors with Electrolyte Gate Layers

NASA Astrophysics Data System (ADS)

Horita, Ryohei; Ohtani, Kyosuke; Kai, Takahiro; Murao, Yusuke; Nishida, Hiroya; Toya, Taku; Seo, Kentaro; Sakai, Mio; Okuda, Tetsuji

2013-11-01

We have fabricated anatase-TiO2 polycrystalline-thin-film field-effect transistors (FETs) with poly(vinyl alcohol) (PVA), ion-liquid (IL), and ion-gel (IG) gate layers, and have tried to improve the response to gate voltage by varying the concentration of mobile ions in these electrolyte gate layers. The increase in the concentration of mobile ions by doping NaOH into the PVA gate layer or reducing the gelator in the IG gate layer markedly increases the drain-source current and reduces the driving gate voltage, which show that the mobile ions in the PVA, IL, and IG gate layers cause the formation of electric double layers (EDLs), which act as nanogap capacitors. In these TiO2-EDL-FETs, the slow formation of EDLs and the oxidation reaction at the interface between the surface of the TiO2 film and the electrolytes cause unideal FET properties. In the optimized IL and IG TiO2-EDL-FETs, the driving gate voltage is less than 1 V and the ON/OFF ratios of the transfer characteristics are about 1×104 at RT, and the nearly metallic state is realized at the interface purely by applying a gate voltage.

Nanostructured refractory thin films for solar applications

NASA Astrophysics Data System (ADS)

Ollier, E.; Dunoyer, N.; Dellea, O.; Szambolics, H.

2014-08-01

Selective solar absorbers are key elements of all solar thermal systems. Solar thermal panels and Concentrated Solar Power (CSP) systems aim respectively at producing heat and electricity. In both cases, a surface receives the solar radiation and is designed to have the highest optical absorption (lowest optical reflectivity) of the solar radiation in the visible wavelength range where the solar intensity is the highest. It also has a low emissivity in the infrared (IR) range in order to avoid radiative thermal losses. Current solutions in the state of the art usually consist in deposited interferential thin films or in cermets [1]. Structured surfaces have been proposed and have been simulated because they are supposed to be more efficient when the solar radiation is not normal to the receiving surface and because they could potentially be fabricated with refractory materials able to sustain high operating temperatures. This work presents a new method to fabricate micro/nanostructured surfaces on molybdenum (refractory metal with a melting temperature of 2623°C). This method now allows obtaining a refractory selective surface with an excellent optical selectivity and a very high absorption in the visible range. This high absorption performance was obtained by achieving a double structuration at micro and nano scales thanks to an innovative process flow.

Unusual photoelectric behaviors of Mo-doped TiO2 multilayer thin films prepared by RF magnetron co-sputtering: effect of barrier tunneling on internal charge transfer

NASA Astrophysics Data System (ADS)

Yan, B. X.; Luo, S. Y.; Mao, X. G.; Shen, J.; Zhou, Q. F.

2013-01-01

Mo-doped TiO2 multilayer thin films were prepared by RF magnetron co-sputtering. Microstructures, crystallite parameters and the absorption band were investigated with atomic force microscopy, X-ray diffraction and ultraviolet-visible spectroscopy. Internal carrier transport characteristics and the photoelectric property of different layer-assemble modes were examined on an electrochemical workstation under visible light. The result indicates that the double-layer structure with an undoped surface layer demonstrated a red-shifted absorption edge and a much stronger photocurrent compared to the uniformly doped sample, signifying that the electric field implanted at the interface between particles in different layers accelerated internal charge transfer effectively. However, a heavily doped layer implanted at the bottom of the three-layer film merely brought about negative effects on the photoelectric property, mainly because of the Schottky junction existing above the substrate. Nevertheless, this obstacle was successfully eliminated by raising the Mo concentration to 1020 cm-3, where the thickness of the depletion layer fell into the order of angstroms and the tunneling coefficient manifested a dramatic increase. Under this circumstance, the Schottky junction disappeared and the strongest photocurrent was observed in the three-layer film.

Threshold thickness for applying diffusion equation in thin tissue optical imaging

NASA Astrophysics Data System (ADS)

Zhang, Yunyao; Zhu, Jingping; Cui, Weiwen; Nie, Wei; Li, Jie; Xu, Zhenghong

2014-08-01

We investigated the suitability of the semi-infinite model of the diffusion equation when using diffuse optical imaging (DOI) to image thin tissues with double boundaries. Both diffuse approximation and Monte Carlo methods were applied to simulate light propagation in the thin tissue model with variable optical parameters and tissue thicknesses. A threshold value of the tissue thickness was defined as the minimum thickness in which the semi-infinite model exhibits the same reflected intensity as that from the double-boundary model and was generated as the final result. In contrast to our initial hypothesis that all optical properties would affect the threshold thickness, our results show that only absorption coefficient is the dominant parameter and the others are negligible. The threshold thickness decreases from 1 cm to 4 mm as the absorption coefficient grows from 0.01 mm-1 to 0.2 mm-1. A look-up curve was derived to guide the selection of the appropriate model during the optical diagnosis of thin tissue cancers. These results are useful in guiding the development of the endoscopic DOI for esophageal, cervical and colorectal cancers, among others.

Effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate thin films: Experimental evidence and implications

NASA Astrophysics Data System (ADS)

Lou, X. J.; Zhang, H. J.; Luo, Z. D.; Zhang, F. P.; Liu, Y.; Liu, Q. D.; Fang, A. P.; Dkhil, B.; Zhang, M.; Ren, X. B.; He, H. L.

2014-09-01

The effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate (PZT) thin film was systematically investigated. It was found that electrical fatigue strongly affects the Rayleigh behaviour of the PZT film. Both the reversible and irreversible Rayleigh coefficients decrease with increasing the number of switching cycles. This phenomenon is attributed to the growth of an interfacial degraded layer between the electrode and the film during electrical cycling. The methodology used in this work could serve as an alternative way for evaluating the fatigue endurance and degradation in dielectric properties of ferroelectric thin-film devices during applications.

Thermoelectric studies of nanoporous thin films with adjusted pore-edge charges

NASA Astrophysics Data System (ADS)

Hao, Qing; Zhao, Hongbo; Xu, Dongchao

2017-03-01

In recent years, nanoporous thin films have been widely studied for thermoelectric applications. High thermoelectric performance is reported for nanoporous Si films, which is attributed to the dramatically reduced lattice thermal conductivity and bulk-like electrical properties. Porous materials can also be used in gas sensing applications by engineering the surface-trapped charges on pore edges. In this work, an analytical model is developed to explore the relationship between the thermoelectric properties and pore-edge charges in a periodic two-dimensional nanoporous material. The presented model can be widely used to analyze the measured electrical properties of general nanoporous thin films and two-dimensional materials.

Method of synthesizing polymers from a solid electrolyte

DOEpatents

Skotheim, Terje A.

1985-01-01

A method of synthesizing electrically conductive polymers from a solvent-free solid polymer electrolyte wherein an assembly of a substrate having an electrode thereon, a thin coating of solid electrolyte including a solution of PEO complexed with an alkali salt, and a thin transparent noble metal electrode are disposed in an evacuated chamber into which a selected monomer vapor is introduced while an electric potential is applied across the solid electrolyte to hold the thin transparent electrode at a positive potential relative to the electrode on the substrate, whereby a highly conductive polymer film is grown on the transparent electrode between it and the solid electrolyte.

Method of synthesizing polymers from a solid electrolyte

DOEpatents

Skotheim, T.A.

1984-10-19

A method of synthesizing electrically conductive polymers from a solvent-free solid polymer electrolyte is disclosed. An assembly of a substrate having an electrode thereon, a thin coating of solid electrolyte including a solution of PEO complexed with an alkali salt, and a thin transparent noble metal electrode are disposed in an evacuated chamber into which a selected monomer vapor is introduced while an electric potential is applied across the solid electrolyte to hold the thin transparent electrode at a positive potential relative to the electrode on the substrate, whereby a highly conductive polymer film is grown on the transparent electrode between it and the solid electrolyte.

Local Deplanation Of Double Reinforced Beam Cross Section Under Bending

NASA Astrophysics Data System (ADS)

Baltov, Anguel; Yanakieva, Ana

2015-12-01

Bending of beams, double reinforced by means of thin composite layers, is considered in the study. Approximate numerical solution is proposed, considering transitional boundary areas, where smooth quadratic transition of the elasticity modulus and deformations take place. Deplanation of the cross section is also accounted for in the areas. Their thickness is found equalizing the total stiffness of the cross section and the layer stiffness. Deplanation of the cross section of the transitional area is determined via the longitudinal deformation in the reinforcing layer, accounting for the equilibrium between the internal and the external moment, generated by the longitudinal stresses in the cross section. A numerical example is given as an illustration demonstrating model's plausibility. The model allows the design and the calculation of recycled concrete beams double reinforced by means of thin layers. The approach is in agreement with modern design of nearly zero energy buildings (NZEB).

Pilot-scale electron cyclotron resonance-metal organic chemical vapor deposition system for the preparation of large-area fluorine-doped SnO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Bup Ju; Hudaya, Chairul; Center for Energy Convergence, Green City Research Institute, Korea Institute of Science and Technology, Hwarangno 14 gil 5, Seoul 136-791

2016-05-15

The authors report the surface morphology, optical, electrical, thermal and humidity impacts, and electromagnetic interference properties of fluorine-doped tin oxide (SnO{sub 2}:F or “FTO”) thin films on a flexible polyethylene terephthalate (PET) substrate fabricated by a pilot-scale electron cyclotron resonance–metal organic chemical vapor deposition (PS ECR-MOCVD). The characteristics of large area FTO thin films were compared with a commercially available transparent conductive electrode made of tin-doped indium oxide (ITO), prepared with an identical film and PET thickness of 125 nm and 188 μm, respectively. The results revealed that the as-prepared FTO thin films exhibited comparable performances with the incumbent ITO films, includingmore » a high optical transmittance of 97% (substrate-subtracted), low electrical resistivity of about 5 × 10{sup −3} Ω cm, improved electrical and optical performances due to the external thermal and humidity impact, and an excellent shielding effectiveness of electromagnetic interference of nearly 2.3 dB. These excellent performances of the FTO thin films were strongly attributed to the design of the PS ECR-MOCVD, which enabled a uniform plasma environment resulting from a proper mixture of electromagnetic profiles and microwave power.« less

3D controlled electrorotation of conducting tri-axial ellipsoidal nanoparticles

NASA Astrophysics Data System (ADS)

Weis Goldstein, Ben; Miloh, Touvia

2017-05-01

We present a theoretical study of 3D electrorotation of ideally polarizable (metallic) nano∖micro-orthotropic particles that are freely suspended in an unbounded monovalent symmetric electrolyte. The metallic tri-axial ellipsoidal particle is subjected to three independent uniform AC electric fields acting along the three principal axes of the particle. The analysis of the electrokinetic problem is carried under the Poisson-Nernst-Planck approximation and the standard "weak" field assumption. For simplicity, we consider the electric double layer as thin and the Dukhin number to be small. Both nonlinear phenomena of dielectrophoresis induced by the dipole-moment within the particle and the induced-charge electrophoresis caused by the Coulombic force density within the Debye layer in the solute surrounding the conducting particle are analytically analyzed by linearization, constructing approximate expressions for the total dipolophoresis angular particle motion for various geometries. The analytical expressions thus obtained are valid for an arbitrary tri-axial orthotropic (exhibiting three planes of symmetry) particle, excited by an arbitrary ambient three-dimensional AC electric field of constant amplitude. The present study is general in the sense that by choosing different geometric parameters of the ellipsoidal particle, the corresponding nonlinear electrostatic problem governed by the Robin (mixed-type) boundary condition can be reduced to common nano-shapes including spheres, slender rods (needles), prolate and oblate spheroids, as well as flat disks. Furthermore, by controlling the parameters (amplitudes and phases) of the forcing electric field, one can reduce the present general 3D electrokinetic model to the familiar planar electro-rotation (ROT) and electro-orientation (EOR) cases.

Subtractive Plasma-Assisted-Etch Process for Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors

DTIC Science & Technology

2015-03-26

THIN - FILM - TRANSISTORS THESIS Thomas M. Donigan, First Lieutenant, USAF AFIT-ENG-MS-15-M-027 DEPARTMENT OF THE AIR FORCE AIR UNIVERSITY AIR...DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE THIN - FILM - TRANSISTORS THESIS Presented to the Faculty Department of Electrical and...15-M-027 SUBTRACTIVE PLASMA-ASSISTED-ETCH PROCESS FOR DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE THIN - FILM - TRANSISTORS

Ultraviolet Electrically Injected Light Sources With Epitaxial ZnO-Based Heterojunctions

DTIC Science & Technology

2007-08-01

ohmic contacts to ZnO , UV photoconductors, and thin film transistors . The integration of ferroelectric oxide thin films with ZnO was also investigated... transistors . The integration of ferroelectric oxide thin films with ZnO was also investigated, as a potential means of locally inverting ZnO to p-type, and to...low contact resistivity ......................... 8 ZnO Thin Film Transistors

Probing-models for interdigitated electrode systems with ferroelectric thin films

NASA Astrophysics Data System (ADS)

Nguyen, Cuong H.; Nigon, Robin; Raeder, Trygve M.; Hanke, Ulrik; Halvorsen, Einar; Muralt, Paul

2018-05-01

In this paper, a new method to characterize ferroelectric thin films with interdigitated electrodes is presented. To obtain accurate properties, all parasitic contributions should be subtracted from the measurement results and accurate models for the ferroelectric film are required. Hence, we introduce a phenomenological model for the parasitic capacitance. Moreover, two common analytical models based on conformal transformations are compared and used to calculate the capacitance and the electric field. With a thin film approximation, new simplified electric field and capacitance formulas are derived. By using these formulas, more consistent CV, PV and stress-field loops for samples with different geometries are obtained. In addition, an inhomogeneous distribution of the permittivity due to the non-uniform electric field is modelled by finite element simulation in an iterative way. We observed that this inhomogeneous distribution can be treated as a homogeneous one with an effective value of the permittivity.

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

NASA Astrophysics Data System (ADS)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Transparent conductive coatings

NASA Technical Reports Server (NTRS)

Ashok, S.

1983-01-01

Thin film transparent conductors are discussed. Materials with electrical conductivity and optical transparency are highly desirable in many optoelectronic applications including photovoltaics. Certain binary oxide semiconductors such as tin oxide (SnO2) and indium oxide (In2O3) offer much better performance tradeoff in optoelectronics as well as better mechanical and chemical stability than thin semitransparent films. These thin-film transparent conductors (TC) are essentially wide-bandgap degenerate semiconductors - invariably n-type - and hence are transparent to sub-bandgap (visible) radiation while affording high electrical conductivity due to the large free electron concentration. The principal performance characteristics of TC's are, of course, electrical conductivity and optical transmission. The TC's have a refractive index of around 2.0 and hence act as very efficient antireflection coatings. For using TC's in surface barrier solar cells, the photovoltaic barrier is of utmost importance and so the work function or electron affinity of the TC is also a very important material parameter. Fabrication processes are discussed.

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

PubMed

George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

2015-06-24

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

Top electrode size effects in the piezoresponse force microscopy of piezoelectric thin films attached to a rigid substrate

NASA Astrophysics Data System (ADS)

Wang, J. H.

2017-10-01

In order to avoid the highly concentrated electric field induced beneath the sharp tip, the technique using a top coating electrode in the piezoresponse force microscopy (PFM) has been developed to detect the piezoelectric coefficients. Reliable theory should be erected to explain the broadly reported top electrode size effects and relate the responses with material constants. In this paper, the surface displacement, electric potential inside the film, electric charge and effective piezoelectric coefficient are expressed as a set of integral equations. Analytical solutions are obtained for two limiting cases, i.e., half space (HS) and infinitely thin film (IT). The effective piezoelectric coefficient of the HS case is proved to be the same as that from the PFM of a piezoelectric half plane without a top coating. For the IT case, it is identical to the well-known piezoelectric coefficient result of piezoelectric thin film clamped between flat rigid electrodes subject to homogeneous external electric field. For PZT4 thin layer, numerical results reveal that the surface displacement obviously decreases and the electric potential distributions inside the film become more and more homogeneous as the electrode radius to film thickness ratio (a/t) enlarges. The electric charge dramatically increases while the effective piezoelectric coefficient evidently decreases and they both transfer from the HS solutions to the IT results when a/t varies from 0.001 to 20. The transition occurs at about a/t = 1 in agreement with the experimental observations. A critical top electrode size, i.e., a/t > 10, is obtained and applicable to other piezoelectric materials. Under such circumstances, one can readily gain the piezoelectric coefficients e 33, d 33 and the dielectric coefficient {\\in }33 if other mechanical coefficients and one piezoelectric constant are known a prior.

Electrical Switching of Perovskite Thin-Film Resistors

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Juan; Ignatiev, Alex

2010-01-01

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Three-dimensional wave evolution on electrified falling films

NASA Astrophysics Data System (ADS)

Tomlin, Ruben; Papageorgiou, Demetrios; Pavliotis, Greg

2016-11-01

We consider the full three-dimensional model for a thin viscous liquid film completely wetting a flat infinite solid substrate at some non-zero angle to the horizontal, with an electric field normal to the substrate far from the flow. Thin film flows have applications in cooling processes. Many studies have shown that the presence of interfacial waves increases heat transfer by orders of magnitude due to film thinning and convection effects. A long-wave asymptotics procedure yields a Kuramoto-Sivashinsky equation with a non-local term to model the weakly nonlinear evolution of the interface dynamics for overlying film arrangements, with a restriction on the electric field strength. The non-local term is always linearly destabilising and produces growth rates proportional to the cube of the magnitude of the wavenumber vector. A sufficiently strong electric field is able promote non-trivial dynamics for subcritical Reynolds number flows where the flat interface is stable in the absence of an electric field. We present numerical simulations where we observe rich dynamical behavior with competing attractors, including "snaking" travelling waves and other fully three-dimensional wave formations. EPSRC studentship (RJT).

Electromagnetic Scattering From a Polygonal Thin Metallic Plate Using Quadrilateral Meshing

NASA Technical Reports Server (NTRS)

Deshpande, Manohar D.

2003-01-01

The problem of electromagnetic (EM) scattering from irregularly shaped, thin, metallic flat plates in free space is solved using the electric field integral equation (EFIE) approach in conjunction with the method of moments (MoM) with quadrilateral meshing. An irregularly shaped thin plate is discretized into quadrilateral patches and the unknown electric surface current over the plate is expressed in terms of proper basis functions over these patches. The basis functions for the electric surface current density that satisfy the proper boundary conditions on these quadrilateral patches are derived. The unknown surface current density on these quadrilateral patches is determined by setting up and solving the electric field integral equation by the application of the MoM. From the knowledge of the surface current density, the EM scattering from various irregularly shaped plates is determined and compared with the earlier published results. The novelty in the present approach is the use of quadrilateral patches instead of well known and often used triangular patches. The numerical results obtained using the quadrilateral patches compare favorably with measured results.

Influence of microstructure and surface topography on the electrical conductivity of Cu and Ag thin films obtained by magnetron sputtering

NASA Astrophysics Data System (ADS)

Polonyankin, D. A.; Blesman, A. I.; Postnikov, D. V.

2017-05-01

Conductive thin films formation by copper and silver magnetron sputtering is one of high technological areas for industrial production of solar energy converters, energy-saving coatings, flat panel displays and touch control panels because of their high electrical and optical properties. Surface roughness and porosity, average grain size, internal stresses, orientation and crystal lattice type, the crystallinity degree are the main physical properties of metal films affecting their electrical resistivity and conductivity. Depending on the film thickness, the dominant conduction mechanism can affect bulk conductivity due to the flow of electron gas, and grain boundary conductivity. The present investigation assesses the effect of microstructure and surface topography on the electrical conductivity of magnetron sputtered Cu and Ag thin films using X-ray diffraction analysis, scanning electron and laser interference microscopy. The highest specific conductivity (78.3 MS m-1 and 84.2 MS m-1, respectively, for copper and silver films at the thickness of 350 nm) were obtained with the minimum values of roughness and grain size as well as a high degree of lattice structuredness.

Diffuse-charge dynamics of ionic liquids in electrochemical systems.

PubMed

Zhao, Hui

2011-11-01

We employ a continuum theory of solvent-free ionic liquids accounting for both short-range electrostatic correlations and steric effects (finite ion size) [Bazant et al., Phys. Rev. Lett. 106, 046102 (2011)] to study the response of a model microelectrochemical cell to a step voltage. The model problem consists of a 1-1 symmetric ionic liquid between two parallel blocking electrodes, neglecting any transverse transport phenomena. Matched asymptotic expansions in the limit of thin double layers are applied to analyze the resulting one-dimensional equations and study the overall charge-time relation in the weakly nonlinear regime. One important conclusion is that our simple scaling analysis suggests that the length scale √(λ*(D)l*(c)) accurately characterizes the double-layer structure of ionic liquids with strong electrostatic correlations where l*(c) is the electrostatic correlation length (in contrast, the Debye screening length λ*(D) is the primary double-layer length for electrolytes) and the response time of λ(D)(*3/2)L*/(D*l(c)(1/2)) (not λ*(D)L*/D* that is the primary charging time of electrolytes) is the correct charging time scale of ionic liquids with strong electrostatic correlations where D* is the diffusivity and L* is the separation length of the cell. With these two new scales, data of both electric potential versus distance from the electrode and the total diffuse charge versus time collapse onto each individual master curve in the presence of strong electrostatic correlations. In addition, the dependance of the total diffuse charge on steric effects, short-range correlations, and driving voltages is thoroughly examined. The results from the asymptotic analysis are compared favorably with those from full numerical simulations. Finally, the absorption of excess salt by the double layer creates a depletion region outside the double layer. Such salt depletion may bring a correction to the leading order terms and break down the weakly nonlinear analysis. A criterion which justifies the weakly nonlinear analysis is verified with numerical simulations.

Electrochromic materials, devices and process of making

DOEpatents

Richardson, Thomas J.

2003-11-11

Thin films of transition metal compositions formed with magnesium that are metals, alloys, hydrides or mixtures of alloys, metals and/or hydrides exhibit reversible color changes on application of electric current or hydrogen. Thin films of these materials are suitable for optical switching elements, thin film displays, sun roofs, rear-view mirrors and architectural glass.

Barium strontium titanate thin film growth with variation of lanthanum dopant compatibility as sensor prototype in the satellite technology

NASA Astrophysics Data System (ADS)

Mulyadi; Wahyuni, Rika; Hardhienata, Hendradi; Irzaman

2018-05-01

Electrical properties of barium strontium titanate thin films were investigated. Three layers of barium strontium titanate thin films have been prepared by chemical solution deposition method and spin coating technique at 8000 rpm rotational speed for 30 seconds and temperature of annealing at 850°C for eight hours with temperature increment of 1.67°C/minute. Materials produced by the process of lanthanum dopant with doping variations of 2%, 4% and 6% above type-p silicon (100) substrates. Film obtained was then carried out the characterization using USB 2000 VIS-NIR and tauc plot method. As a result, the barium strontium titanate thin film has the value of band gap energy of 1.58 eV, 1.92 eV and 2.24 eV respectively. The characterization of electrical properties shows that the band gap value of barium strontium titanate thin film with lanthanum dopant was in the range of semiconductor value. Barium strontium titanate thin films with lanthanum dopant are sensitive to temperature changes, so it potentially to be applied to temperature monitoring on satellite technology.

Doping induced c-axis oriented growth of transparent ZnO thin film

NASA Astrophysics Data System (ADS)

Mistry, Bhaumik V.; Joshi, U. S.

2018-04-01

c-Axis oriented In doped ZnO (IZO) transparent conducting thin films were optimized on glass substrate using sol gel spin coating method. The Indium content in ZnO was varied systematically and the structural parameters were studied. Along with the crystallographic properties, the optoelectronic and electrical properties of IZO thin films were investigated in detail. The IZO thin films revealed hexagonal wurtzite structure. It was found that In doping in ZnO promotes the c-axis oriented growth of the thin films deposited on amorphous substrate. The particle size of the IZO films were increase as doping content increases from 2% to 5%. The 2% In doped ZnO film show electrical resistivity of 0.11 Ω cm, which is far better than the reported value for ZnO thin film. Better than 75% average optical transmission was estimated in the wavelength range from 400-800 nm. Systematic variartions in the electron concentration and band gap was observed with increasing In doping. Note worthy finding is that, with suitable amount of In doping improves not only transparency and conductivity but also improves the preferred orientation of the oxide thin film.

Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mistry, Bhaumik V., E-mail: bhaumik-phy@yahoo.co.in; Joshi, U. S.

Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10{sup −3} V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×10{sup 18} cm{sup 3},more » while the Hall mobility of the IGZO thin film was 16 cm{sup 2} V{sup −1}S{sup −1}.« less

Unidirectional oxide hetero-interface thin-film diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing amore » high feasibility for practical applications.« less

Electrical-transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin films

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

1992-01-01

The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.

Structural, electrical, optical and magnetic properties of NiO/ZnO thin films

NASA Astrophysics Data System (ADS)

Sushmitha, V.; Maragatham, V.; Raj, P. Deepak; Sridharan, M.

2018-02-01

Nickel oxide/Zinc oxide (NiO/ZnO) thin films have been deposited onto thoroughly cleaned glass substrates by reactive direct current (DC) magnetron sputtering technique and subsequently annealed at 300 °C for 3 h in vacuum. The NiO/ZnO thin films were then studied for their structural, optical and electrical properties. X-ray diffraction (XRD) pattern of ZnO and NiO showed the diffraction planes corresponding to hexagonal and cubic phase respectively. The optical properties showed that with the increase in the deposition time of NiO the energy band gap varied between 3.1 to 3.24 eV. Hence, by changing the deposition time of NiO the tuning of band gap and conductivity were achieved. The magnetic studies revealed the diamagnetic nature of the NiO/ZnO thin films.

Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

NASA Astrophysics Data System (ADS)

Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi-Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H. W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui-Zu

2018-03-01

Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTi O3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8 ) 2T e3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12 DL S n0.9C r0.1Te film is ˜110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12 DL S n0.9C r0.1Te film is substantially lower than the predicted quantized value (˜1 /4 h /e2 ). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

Au doping effects on electrical and optical properties of vanadium dioxides

NASA Astrophysics Data System (ADS)

Zhu, YaBin; He, Fan; Na, Jie

2012-03-01

Vanadium dioxides were fabricated on normal glass substrates using reactive radio frequency (RF) magnetron sputtering. The oxygen flow volume and annealed temperatures as growth parameters are systematically investigated. The electrical and optical properties of VO2 and Au:VO2 thin films with different growth conditions are discussed. The semiconductor-metal phase transition temperature decreased by ˜10°C for the sample with Au doping compared to the sample without Au doping. However, the optical transmittance of Au:VO2 thin films is much lower than that of bare VO2. These results show that Au doping has a marked effect on the electrical and optical properties.

Thin film hydrogen sensor

DOEpatents

Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

1994-01-01

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Thin film hydrogen sensor

DOEpatents

Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

1994-11-22

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

Leakage conduction behavior in electron-beam-cured nanoporous silicate films

NASA Astrophysics Data System (ADS)

Liu, Po-Tsun; Tsai, T. M.; Chang, T. C.

2005-05-01

This letter explores the application of electron-beam curing on nanoporous silicate films. The electrical conduction mechanism for the nanoporous silicate film cured by electron-beam radiation has been studied with metal-insulator-semiconductor capacitors. Electrical analyses over a varying temperature range from room temperature to 150°C provide evidence for space-charge-limited conduction in the electron-beam-cured thin film, while Schottky-emission-type leaky behavior is seen in the counterpart typically cured by a thermal furnace. A physical model consistent with electrical analyses is also proposed to deduce the origin of conduction behavior in the nanoporous silicate thin film.

Thinning and underburning effects on ground fuels in Jeffrey pine

Treesearch

R.F. Walker; R.M. Fecko; W.B. Frederick; J.D. Murphy; D.W. Johnson; W.W. Miller

2007-01-01

Thinning with cut-to-length and whole-tree harvesting systems followed by underburning were evaluated for their impacts on downed and dead fuel loading by timelag category in eastern Sierra Nevada Jeffrey pine (Pinus jeffreyi Grev. & Balf.). Cut-to-length harvesting resulted in an approximate doubling of total fuel loading to 113829 kg ha

Evaluating Thin Client Computers for Use by the Polish Army

DTIC Science & Technology

2006-06-01

43 Figure 15. Annual Electricity Cost and Savings for 5 to 100 Users (source: Thin Client Computing...50 percent in hard costs in the first year of thin client network deployment.20 However, the greatest savings come from the reduction in soft costs ...resources from both the classrooms and home. The thin client solution increased the reliability of the IT infrastructure and resulted in cost savings

Reversible Heating in Electric Double Layer Capacitors.

PubMed

Janssen, Mathijs; van Roij, René

2017-03-03

A detailed comparison is made between different viewpoints on reversible heating in electric double layer capacitors. We show in the limit of slow charging that a combined Poisson-Nernst-Planck and heat equation, first studied by d'Entremont and Pilon [J. Power Sources 246, 887 (2014)JPSODZ0378-775310.1016/j.jpowsour.2013.08.024], recovers the temperature changes as predicted by the thermodynamic identity of Janssen et al. [Phys. Rev. Lett. 113, 268501 (2014)PRLTAO0031-900710.1103/PhysRevLett.113.268501], and disagrees with the approximative model of Schiffer et al. [J. Power Sources 160, 765 (2006)JPSODZ0378-775310.1016/j.jpowsour.2005.12.070] that predominates the literature. The thermal response to the adiabatic charging of supercapacitors contains information on electric double layer formation that has remained largely unexplored.

Double-tilt in situ TEM holder with ultra-high stability.

PubMed

Xu, Mingjie; Dai, Sheng; Blum, Thomas; Li, Linze; Pan, Xiaoqing

2018-05-06

A double tilting holder with high stability is essential for acquiring atomic-scale information by transmission electron microscopy (TEM), but the availability of such holders for in situ TEM studies under various external stimuli is limited. Here, we report a unique design of seal-bearing components that provides ultra-high stability and multifunctionality (including double tilting) in an in situ TEM holder. The seal-bearing subsystem provides superior vibration damping and electrical insulation while maintaining excellent vacuum sealing and small form factor. A wide variety of in situ TEM applications including electrical measurement, STM mapping, photovoltaic studies, and CL spectroscopy can be performed on this platform with high spatial resolution imaging and electrical sensitivity at the pA scale. Copyright © 2018 Elsevier B.V. All rights reserved.

Effects of bacteria on CdS thin films used in technological devices

NASA Astrophysics Data System (ADS)

Alpdoğan, S.; Adıgüzel, A. O.; Sahan, B.; Tunçer, M.; Metin Gubur, H.

2017-04-01

Cadmium sulfide (CdS) thin films were fabricated on glass substrates by the chemical bath deposition method at 70 {}^\\circ \\text{C} considering deposition times ranging from 2 h to 5 h. The optical band gaps of CdS thin films were found to be in the 2.42-2.37 eV range. CdS thin films had uniform spherical nano-size grains which had polycrystalline, hexagonal and cubic phases. The films had a characteristic electrical resistivity of the order of {{10}5} Ω \\text{cm} and n-type conductivity at room condition. CdS thin films were incubated in cultures of B.domonas aeruginosa and Staphylococcus aureus, which exist abundantly in the environment, and form biofilms. SEM images showed that S. aureus and K. pneumonia were detected significantly on the film surfaces with a few of P. aeruginosa and B. subtilis cells attached. CdS thin film surface exhibits relatively good resistance to the colonization of P. aeruginosa and B. subtilis. Optical results showed that the band gap of CdS thin films which interacted with the bacteria is 2.42 \\text{eV} . The crystal structure and electrical properties of CdS thin films were not affected by bacterial adhesion. The antimicrobial effect of CdS nanoparticles was different for different bacterial strains.

Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

NASA Astrophysics Data System (ADS)

Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

2017-01-01

Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

An S3-3 search for confined regions of large parallel electric fields

NASA Astrophysics Data System (ADS)

Boehm, M. H.; Mozer, F. S.

1981-06-01

S3-3 satellite passes through several hundred perpendicular shocks are searched for evidence of large, mostly parallel electric fields (several hundred millivolts per meter, total potential of several kilo-volts) in the auroral zone magnetosphere at altitudes of several thousand kilometers. The actual search criteria are that one or more E-field data points have a parallel component E sub z greater than 350 mV/m in general, or 100 mV/m for data within 10 seconds of a perpendicular shock, since double layers might be likely, in such regions. Only a few marginally convincing examples of the electric fields are found, none of which fits a double layer model well. From statistics done with the most unbiased part of the data set, upper limits are obtained on the number and size of double layers occurring in the auroral zone magnetosphere, and it is concluded that the double layers most probably cannot be responsible for the production of diffuse aurora or inverted-V events.

Extending the 3ω method: thermal conductivity characterization of thin films.

PubMed

Bodenschatz, Nico; Liemert, André; Schnurr, Sebastian; Wiedwald, Ulf; Ziemann, Paul

2013-08-01

A lock-in technique for measurement of thermal conductivity and volumetric heat capacity of thin films is presented. The technique is based on the 3ω approach using electrical generation and detection of oscillatory heat along a thin metal strip. Thin films are deposited onto the backside of commercial silicon nitride membranes, forming a bilayer geometry with distinct thermal parameters. Stepwise comparison to an adapted heat diffusion model delivers these parameters for both layers. Highest sensitivity is found for metallic thin films.

Characterization of aluminum selenide bi-layer thin film

NASA Astrophysics Data System (ADS)

Boolchandani, Sarita; Soni, Gyanesh; Srivastava, Subodh; Vijay, Y. K.

2018-05-01

The Aluminum Selenide (AlSe) bi-layer thin films were grown on glass substrate using thermal evaporation method under high vacuum condition. The morphological characterization was done using SEM. Electrical measurement with temperature variation shows that thin films exhibit the semiconductor nature. The optical properties of prepared thin films have also been characterized by UV-VIS spectroscopy measurements. The band gap of composite thin films has been calculated by Tauc's relation at different temperature ranging 35°C-100°C.

Surface Modification of Solution-Processed ZrO2 Films through Double Coating for Pentacene Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Kwon, Jin-Hyuk; Bae, Jin-Hyuk; Lee, Hyeonju; Park, Jaehoon

2018-03-01

We report the modification of surface properties of solution-processed zirconium oxide (ZrO2) dielectric films achieved by using double-coating process. It is proven that the surface properties of the ZrO2 film are modified through the double-coating process; the surface roughness decreases and the surface energy increases. The present surface modification of the ZrO2 film contributes to an increase in grain size of the pentacene film, thereby increasing the field-effect mobility and decreasing the threshold voltage of the pentacene thin-film transistors (TFTs) having the ZrO2 gate dielectric. Herein, the molecular orientation of pentacene film is also studied based on the results of contact angle and X-ray diffraction measurements. Pentacene molecules on the double-coated ZrO2 film are found to be more tilted than those on the single-coated ZrO2 film, which is attributed to the surface modification of the ZrO2 film. However, no significant differences are observed in insulating properties between the single-and the double-coated ZrO2 dielectric films. Consequently, the characteristic improvements of the pentacene TFTs with the double-coated ZrO2 gate dielectric film can be understood through the increase in pentacene grain size and the reduction in grain boundary density.

Thermoelectric and Transport Properties of Delafossite CuCrO2:Mg Thin Films Prepared by RF Magnetron Sputtering

PubMed Central

Sinnarasa, Inthuga; Thimont, Yohann; Presmanes, Lionel; Barnabé, Antoine; Tailhades, Philippe

2017-01-01

P-type Mg doped CuCrO2 thin films have been deposited on fused silica substrates by Radio-Frequency (RF) magnetron sputtering. The as-deposited CuCrO2:Mg thin films have been annealed at different temperatures (from 450 to 650 °C) under primary vacuum to obtain the delafossite phase. The annealed samples exhibit 3R delafossite structure. Electrical conductivity σ and Seebeck coefficient S of all annealed films have been measured from 40 to 220 °C. The optimized properties have been obtained for CuCrO2:Mg thin film annealed at 550 °C. At a measurement temperature of 40 °C, this sample exhibited the highest electrical conductivity of 0.60 S·cm−1 with a Seebeck coefficient of +329 µV·K−1. The calculated power factor (PF = σS²) was 6 µW·m−1·K−2 at 40 °C and due to the constant Seebeck coefficient and the increasing electrical conductivity with measurement temperature, it reached 38 µW·m−1·K−2 at 220 °C. Moreover, according to measurement of the Seebeck coefficient and electrical conductivity in temperature, we confirmed that CuCrO2:Mg exhibits hopping conduction and degenerates semiconductor behavior. Carrier concentration, Fermi level, and hole effective mass have been discussed. PMID:28654011

Highly flexible electronics from scalable vertical thin film transistors.

PubMed

Liu, Yuan; Zhou, Hailong; Cheng, Rui; Yu, Woojong; Huang, Yu; Duan, Xiangfeng

2014-03-12

Flexible thin-film transistors (TFTs) are of central importance for diverse electronic and particularly macroelectronic applications. The current TFTs using organic or inorganic thin film semiconductors are usually limited by either poor electrical performance or insufficient mechanical flexibility. Here, we report a new design of highly flexible vertical TFTs (VTFTs) with superior electrical performance and mechanical robustness. By using the graphene as a work-function tunable contact for amorphous indium gallium zinc oxide (IGZO) thin film, the vertical current flow across the graphene-IGZO junction can be effectively modulated by an external gate potential to enable VTFTs with a highest on-off ratio exceeding 10(5). The unique vertical transistor architecture can readily enable ultrashort channel devices with very high delivering current and exceptional mechanical flexibility. With large area graphene and IGZO thin film available, our strategy is intrinsically scalable for large scale integration of VTFT arrays and logic circuits, opening up a new pathway to highly flexible macroelectronics.

Rapid identification of areas of interest in thin film materials libraries by combining electrical, optical, X-ray diffraction, and mechanical high-throughput measurements: a case study for the system Ni-Al.

PubMed

Thienhaus, S; Naujoks, D; Pfetzing-Micklich, J; König, D; Ludwig, A

2014-12-08

The efficient identification of compositional areas of interest in thin film materials systems fabricated by combinatorial deposition methods is essential in combinatorial materials science. We use a combination of compositional screening by EDX together with high-throughput measurements of electrical and optical properties of thin film libraries to determine efficiently the areas of interest in a materials system. Areas of interest are compositions which show distinctive properties. The crystallinity of the thus determined areas is identified by X-ray diffraction. Additionally, by using automated nanoindentation across the materials library, mechanical data of the thin films can be obtained which complements the identification of areas of interest. The feasibility of this approach is demonstrated by using a Ni-Al thin film library as a reference system. The obtained results promise that this approach can be used for the case of ternary and higher order systems.

Electrochemical and physical properties of electroplated CuO thin films.

PubMed

Dhanasekaran, V; Mahalingam, T

2013-01-01

Cupric oxide thin films have been prepared on ITO glass substrates from an aqueous electrolytic bath containing CuSO4 and tartaric acid. Growth mechanism has been analyzed using cyclic voltammetry. The role of pH on the structural, morphological, compositional, electrical and optical properties of CuO films is investigated. The structural studies revealed that the deposited films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. X-ray line profile analysis has been carried out to determine the microstructural parameters of CuO thin films. The pyramid shaped grains are observed from SEM and AFM images. The optical band gap energy and electrical activation energy is found to be 1.45 and 0.37 eV, respectively. Also, the optical constants of CuO thin films such as refractive index (n), complex dielectric constant (epsilon) extinction coefficient (k) and optical conductivity (sigma) are evaluated.

Semiconducting Properties of Nanostructured Amorphous Carbon Thin Films Incorporated with Iodine by Thermal Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Kamaruzaman, Dayana; Ahmad, Nurfadzilah; Annuar, Ishak; Rusop, Mohamad

2013-11-01

Nanostructured iodine-post doped amorphous carbon (a-C:I) thin films were prepared from camphor oil using a thermal chemical vapor deposition (TCVD) technique at different doping temperatures. The structural properties of the films were studied by field-emission scanning electron microscopy (FESEM), energy-dispersive spectroscopy (EDS), Raman, and Fourier transform infrared (FTIR) studies. FESEM and EDS studies showed successful iodine doping. FTIR and Raman studies showed that the a-C:I thin films consisted of a mixture of sp2- and sp3-bonded carbon atoms. The optical and electrical properties of a-C:I thin films were determined by UV-vis-NIR spectroscopy and current-voltage (I-V) measurement respectively. The optical band gap of a-C thin films decreased upon iodine doping. The highest electrical conductivity was found at 400 °C doping. Heterojunctions are confirmed by rectifying the I-V characteristics of an a-C:I/n-Si junction.

Enhanced photo response of mesoporous nanostructured CdS thin film via electrospray aerosol deposition technique

NASA Astrophysics Data System (ADS)

Logu, T.; Soundarrajan, P.; Sankarasubramanian, K.; Sethuraman, K.

2018-04-01

In this work, a high crystalline and mesoporous nanostructured cadmium sulfide (CdS) thin film was successfully grown on the FTO substrates using facile Electrospray Aerosol Deposition (ESAD) technique. The structural, optical, morphological and electrical properties of CdS thin film have been systematically examined. CdS thin film exhibits the hexagonal wurtzite crystal structure with polycrystalline nature. The optical band gap energy of the prepared film was estimated from the Tauc plot and is 2.43 eV. The SEM and AFM images show that the well-interconnected CdS nanoparticles gives mesoporous like morphology. The fine aerosol generated from the ESAD process induces the alteration in the surface morphological structure of deposited CdS film that consequences in enhanced electrical and photo-physical properties. The photoconductivity of the sample has been studied which demonstrates significant photo current. The present study predicts that mesoporous nanostructured CdS thin film would be given a special interest for optoelectronic applications.

Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses

PubMed Central

Fukuda, Kenjiro; Sekine, Tomohito; Shiwaku, Rei; Morimoto, Takuya; Kumaki, Daisuke; Tokito, Shizuo

2016-01-01

The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates that have been removed. The fabricated organic circuits with total device thicknesses down to 350 nm have electrical performance levels close to those fabricated on conventional flexible substrates. Moreover, they exhibit excellent mechanical robustness, whereby their static and dynamic electrical characteristics do not change even under 50% compressive strain. Tests using systematically applied compressive strains reveal that these free-standing organic transistors possess anisotropic mechanical stability, and a strain model for a multilayer stack can be used to describe the strain in this sort of ultra-thin device. These results show the feasibility of ultimate-thin organic electronic devices using free-standing constructions. PMID:27278828

Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

NASA Astrophysics Data System (ADS)

Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

2018-04-01

In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balagula, R. M., E-mail: rmbal@spbstu.ru; Vinnichenko, M. Ya., E-mail: mvin@spbstu.ru; Makhov, I. S.

The effect of a lateral electric field on the mid-infrared absorption and interband photoluminescence spectra in double tunnel-coupled GaAs/AlGaAs quantum wells is studied. The results obtained are explained by the redistribution of hot electrons between quantum wells and changes in the space charge in the structure. The hot carrier temperature is determined by analyzing the intersubband light absorption and interband photoluminescence modulation spectra under strong lateral electric fields.

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

NASA Astrophysics Data System (ADS)

Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

2017-07-01

We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

Influence of sputtering power on the optical properties of ITO thin films

NASA Astrophysics Data System (ADS)

K, Aijo John; Kumar, Vineetha V.; M, Deepak; T, Manju

2014-10-01

Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

Properties of thin silver films with different thickness

NASA Astrophysics Data System (ADS)

Zhao, Pei; Su, Weitao; Wang, Reng; Xu, Xiaofeng; Zhang, Fengshan

2009-01-01

In order to investigate optical properties of silver films with different film thickness, multilayer composed of thin silver film sandwiched between ZnS films are sputtered on the float glass. The crystal structures, optical and electrical properties of films are characterized by various techniques, such as X-ray diffraction (XRD), spectrum analysis, etc. The optical constants of thin silver film are calculated by fitting the transmittance ( T) and reflectance ( R) spectrum of the multilayer. Electrical and optical properties of silver films thinner than 6.2 nm exhibit sharp change. However, variation becomes slow as film thickness is larger than 6.2 nm. The experimental results indicate that 6.2 nm is the optimum thickness for properties of silver.

A new hydrodynamic analysis of double layers

NASA Technical Reports Server (NTRS)

Hora, Heinrich

1987-01-01

A genuine two-fluid model of plasmas with collisions permits the calculation of dynamic (not necessarily static) electric fields and double layers inside of plasmas including oscillations and damping. For the first time a macroscopic model for coupling of electromagnetic and Langmuir waves was achieved with realistic damping. Starting points were laser-produced plasmas showing very high dynamic electric fields in nonlinear force-produced cavitous and inverted double layers in agreement with experiments. Applications for any inhomogeneous plasma as in laboratory or in astrophysical plasmas can then be followed up by a transparent hydrodynamic description. Results are the rotation of plasmas in magnetic fields and a new second harmonic resonance, explanation of the measured inverted double layers, explanation of the observed density-independent, second harmonics emission from laser-produced plasmas, and a laser acceleration scheme by the very high fields of the double layers.

49 CFR 236.723 - Circuit, double wire; line.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Circuit, double wire; line. 236.723 Section 236... § 236.723 Circuit, double wire; line. An electric circuit not employing a common return wire; a circuit formed by individual wires throughout. ...

49 CFR 236.723 - Circuit, double wire; line.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Circuit, double wire; line. 236.723 Section 236... § 236.723 Circuit, double wire; line. An electric circuit not employing a common return wire; a circuit formed by individual wires throughout. ...

Synthesis and characterization of lead sulphide thin films from ethanolamine (ETA) complexing agent chemical bath

NASA Astrophysics Data System (ADS)

Gashaw Hone, Fekadu; Dejene, F. B.

2018-02-01

Polycrystalline lead sulphide (PbS) thin films were grown on glass substrates by chemical bath deposition route using ethanolamine (ETA) as a complexing agent. The effects of ETA molar concentration on the structural, morphological, electrical and optical properties of lead sulphide thin films were thoroughly studied. The XRD analyses revealed that all the deposited thin films were face center cubic crystal structure and their preferred orientations were varied along the (111) and (200) planes. The XRD results further confirmed that ETA concentration had a significant effects on the strain, average crystalline size and dislocation density of the deposited thin films. The SEM studies illustrated the evolution and transformation of surface morphology as ETA molar concentration increased from 0.41 M to 1.64 M. The energy dispersive x-ray analysis was used to verify the compositional elements of the deposited thin films. Optical spectroscopy investigation established that the band gap of the PbS thin films were reduced from 0.98 eV to 0.68 eV as ETA concentration increased. The photoluminescence spectra showed a well defined peak at 428 nm and shoulder around 468 nm for all PbS thin films. The electrical resistivity of the thin films found in the order of 103 Ω cm at room temperature and decreased as the ETA molar concentration was increased.

Thermoelectric Properties of Poly(3-hexylthiophene) (P3HT) Doped with 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4TCNQ) by Vapor-Phase Infiltration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lim, Eunhee; Peterson, Kelly A.; Su, Gregory M.

Doping of thin films of semiconducting polymers provides control of their electrical conductivity and thermopower. The electrical conductivity of semiconducting polymers rises nonlinearly with the carrier concentration, and there is a lack of understanding of the detailed factors that lead to this behavior. Here, we report a study of the morphological effects of doping on the electrical conductivity of poly(3-hexylthiophene) (P3HT) thin films doped with small molecule 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4TCNQ). Resonant soft X-ray scattering shows that the morphology of films of P3HT is not strongly changed by infiltration of F 4TCNQ from the vapor phase. We show that the localmore » ordering of P3HT, the texture and form factor of crystallites, and the long-range connectivity of crystalline domains contribute to the electrical conductivity in thin films. The thermopower of films of P3HT doped with F 4TCNQ from the vapor phase is not strongly enhanced relative to films doped from solution, but the electrical conductivity is significantly higher, improving the thermoelectric power factor.« less

Thermoelectric Properties of Poly(3-hexylthiophene) (P3HT) Doped with 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4TCNQ) by Vapor-Phase Infiltration

DOE PAGES

Lim, Eunhee; Peterson, Kelly A.; Su, Gregory M.; ...

2018-01-29

Doping of thin films of semiconducting polymers provides control of their electrical conductivity and thermopower. The electrical conductivity of semiconducting polymers rises nonlinearly with the carrier concentration, and there is a lack of understanding of the detailed factors that lead to this behavior. Here, we report a study of the morphological effects of doping on the electrical conductivity of poly(3-hexylthiophene) (P3HT) thin films doped with small molecule 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4TCNQ). Resonant soft X-ray scattering shows that the morphology of films of P3HT is not strongly changed by infiltration of F 4TCNQ from the vapor phase. We show that the localmore » ordering of P3HT, the texture and form factor of crystallites, and the long-range connectivity of crystalline domains contribute to the electrical conductivity in thin films. The thermopower of films of P3HT doped with F 4TCNQ from the vapor phase is not strongly enhanced relative to films doped from solution, but the electrical conductivity is significantly higher, improving the thermoelectric power factor.« less

Study on the growth mechanism and optical properties of sputtered lead selenide thin films

NASA Astrophysics Data System (ADS)

Sun, Xigui; Gao, Kewei; Pang, Xiaolu; Yang, Huisheng; Volinsky, Alex A.

2015-11-01

Lead selenide thin films with different microstructure were deposited on Si (1 0 0) substrates using magnetron sputtering at 50 °C, 150 °C and 250 °C, respectively. The crystal structure of the sputtered PbSe thin films varies from amorphous crystalline to columnar grain, and then to double-layer (nano-crystalline layer and columnar grain layer) structure as the deposition temperature increases, which is due to the dominating growth mode of the thin films changes from Frank-van der Merwe (or layer-by-layer) growth mode at 50 °C to Volmer-Weber (or 3D island) growth mode at 150 °C, and then to Stranski-Krastanow (or 3D island-on-wetting-layer) growth mode at 250 °C. The growth mechanism of the sputtered PbSe thin films is mainly dominated by the surface and strain energy contributions. Moreover, the strain energy contribution is more prominent when the deposition temperature is less than 180 °C, while, the surface energy contribution is more prominent when the deposition temperature is higher than 180 °C. The absorption spectra of the sputtered PbSe thin films are in 3.1-5 μm range. Besides, the sputtered PbSe thin film prepared at 250 °C has two different optical band gaps due to its unique double-layer structure. According to the theoretical calculation results, the variation of the band gap with the deposition temperature is determined by the shift of the valence band maximum with the lattice constant.

Spin-orbit coupling and electric-dipole spin resonance in a nanowire double quantum dot.

PubMed

Liu, Zhi-Hai; Li, Rui; Hu, Xuedong; You, J Q

2018-02-02

We study the electric-dipole transitions for a single electron in a double quantum dot located in a semiconductor nanowire. Enabled by spin-orbit coupling (SOC), electric-dipole spin resonance (EDSR) for such an electron can be generated via two mechanisms: the SOC-induced intradot pseudospin states mixing and the interdot spin-flipped tunneling. The EDSR frequency and strength are determined by these mechanisms together. For both mechanisms the electric-dipole transition rates are strongly dependent on the external magnetic field. Their competition can be revealed by increasing the magnetic field and/or the interdot distance for the double dot. To clarify whether the strong SOC significantly impact the electron state coherence, we also calculate relaxations from excited levels via phonon emission. We show that spin-flip relaxations can be effectively suppressed by the phonon bottleneck effect even at relatively low magnetic fields because of the very large g-factor of strong SOC materials such as InSb.

Performance of Electric Double-Layer Capacitor Simulators

NASA Astrophysics Data System (ADS)

Funabiki, Shigeyuki; Kodama, Shinsuke; Yamamoto, Masayoshi

This paper proposes a simulator of EDLC, which realizes the performance equivalent to electric double-layer capacitors (EDLCs). The proposed simulator consists of an electrolytic capacitor and a two-quadrant chopper working as a current source. Its operation principle is described in the first place. The voltage dependence of capacitance of EDLCs is taken into account. The performance of the proposed EDLC simulator is verified by computer simulations.

Investigation of electron beam lithography effects on metal-insulator transition behavior of vanadium dioxide

NASA Astrophysics Data System (ADS)

Yuce, H.; Alaboz, H.; Demirhan, Y.; Ozdemir, M.; Ozyuzer, L.; Aygun, G.

2017-11-01

Vanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.

Barium titanate nanocrystals and nanocrystal thin films: Synthesis, ferroelectricity, and dielectric properties

NASA Astrophysics Data System (ADS)

Huang, Limin; Chen, Zhuoying; Wilson, James D.; Banerjee, Sarbajit; Robinson, Richard D.; Herman, Irving P.; Laibowitz, Robert; O'Brien, Stephen

2006-08-01

Advanced applications for high k dielectric and ferroelectric materials in the electronics industry continues to demand an understanding of the underlying physics in decreasing dimensions into the nanoscale. We report the synthesis, processing, and electrical characterization of thin (<100nm thick) nanostructured thin films of barium titanate (BaTiO3) built from uniform nanoparticles (<20nm in diameter). We introduce a form of processing as a step toward the ability to prepare textured films based on assembly of nanoparticles. Essential to this approach is an understanding of the nanoparticle as a building block, combined with an ability to integrate them into thin films that have uniform and characteristic electrical properties. Our method offers a versatile means of preparing BaTiO3 nanocrystals, which can be used as a basis for micropatterned or continuous BaTiO3 nanocrystal thin films. We observe the BaTiO3 nanocrystals crystallize with evidence of tetragonality. We investigated the preparation of well-isolated BaTiO3 nanocrystals smaller than 10nm with control over aggregation and crystal densities on various substrates such as Si, Si /SiO2, Si3N4/Si, and Pt-coated Si substrates. BaTiO3 nanocrystal thin films were then prepared, resulting in films with a uniform nanocrystalline grain texture. Electric field dependent polarization measurements show spontaneous polarization and hysteresis, indicating ferroelectric behavior for the BaTiO3 nanocrystalline films with grain sizes in the range of 10-30nm. Dielectric measurements of the films show dielectic constants in the range of 85-90 over the 1KHz -100KHz, with low loss. We present nanocrystals as initial building blocks for the preparation of thin films which exhibit highly uniform nanostructured texture and grain sizes.

Rectenna that converts infrared radiation to electrical energy

DOEpatents

Davids, Paul; Peters, David W.

2016-09-06

Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive layer. A thin insulator layer is formed on the conductive layer, and a nanoantenna is formed on the thin insulator layer. The thin insulator layer acts as a tunnel junction of a tunnel diode.

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate.

PubMed

Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

2016-12-12

In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O 2 /Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O 2 /Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (I off ) of 3 pA, a high on/off current ratio of 2 × 10 7 , a high saturation mobility (μ sat ) of 66.7 cm 2 /V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (V th ) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays.

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

NASA Astrophysics Data System (ADS)

Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

2016-12-01

In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O2/Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (Ioff) of 3 pA, a high on/off current ratio of 2 × 107, a high saturation mobility (μsat) of 66.7 cm2/V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (Vth) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays.

Effects of substrate heating and post-deposition annealing on characteristics of thin MOCVD HfO2 films

NASA Astrophysics Data System (ADS)

Gopalan, Sundararaman; Ramesh, Sivaramakrishnan; Dutta, Shibesh; Virajit Garbhapu, Venkata

2018-02-01

It is well known that Hf-based dielectrics have replaced the traditional SiO2 and SiON as gate dielectric materials for conventional CMOS devices. By using thicker high-k materials such as HfO2 rather than ultra-thin SiO2, we can bring down leakage current densities in MOS devices to acceptable levels. HfO2 is also one of the potential candidates as a blocking dielectric for Flash memory applications for the same reason. In this study, effects of substrate heating and oxygen flow rate while depositing HfO2 thin films using CVD and effects of post deposition annealing on the physical and electrical characteristics of HfO2 thin films are presented. It was observed that substrate heating during deposition helps improve the density and electrical characteristics of the films. At higher substrate temperature, Vfb moved closer to zero and also resulted in significant reduction in hysteresis. Higher O2 flow rates may improve capacitance, but also results in slightly higher leakage. The effect of PDA depended on film thickness and O2 PDA improved characteristics only for thick films. For thinner films forming gas anneal resulted in better electrical characteristics.

A comparison study of Co and Cu doped MgO diluted magnetic thin films

NASA Astrophysics Data System (ADS)

Sarıtaş, S.; ćakıcı, T.; Muǧlu, G. Merhan; Kundakcı, M.; Yıldırım, M.

2017-02-01

Transition metal-doped MgO diluted magnetic thin films are appropriate candidates for spintronic applications and designing magnetic devices and sensors. Therefore, MgO:Co and MgO:Cu films were deposited on glass substrates by Chemical Spray Pyrolysis (CSP) method different thin film deposition parameters. Deposited different transition metal doped MgO thin films were compared in terms of optic and structural properties. Comparison optic analysis of the films was investigated spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Comparison structural analysis of the thin films was examined by using XRD, Raman Analysis, SEM, EDX and AFM techniques. The transition metal-doped; MgO:Co and MgO:Cu thin films maybe have potential applications in spintronics and magnetic data storage.

Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement

NASA Astrophysics Data System (ADS)

Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Okuhata, Ryo; Ishibe, Takafumi; Watanabe, Kentaro; Suzuki, Takeyuki; Fujita, Takeshi; Sawano, Kentarou; Nakamura, Yoshiaki

2017-05-01

We have investigated the intrinsic thermoelectric properties of epitaxial β-FeSi2 thin films and the impact of phosphorus (P) doping. Epitaxial β-FeSi2 thin films with single phase were grown on Si(111) substrates by two different techniques in an ultrahigh-vacuum molecular beam epitaxy (MBE) system: solid-phase epitaxy (SPE), where iron silicide films formed by codeposition of Fe and Si at room temperature were recrystallized by annealing at 530°C to form epitaxial β-FeSi2 thin films on Si(111) substrates, and MBE of β-FeSi2 thin films on epitaxial β-FeSi2 templates formed on Si(111) by reactive deposition epitaxy (RDE) at 530°C (RDE + MBE). Epitaxial SPE thin films based on codeposition had a flatter surface and more abrupt β-FeSi2/Si(111) interface than epitaxial RDE + MBE thin films. We investigated the intrinsic thermoelectric properties of the epitaxial β-FeSi2 thin films on Si(111), revealing lower thermal conductivity and higher electrical conductivity compared with bulk β-FeSi2. We also investigated the impact of doping on the Seebeck coefficient of bulk and thin-film β-FeSi2. A route to enhance the thermoelectric performance of β-FeSi2 is proposed, based on (1) fabrication of thin-film structures for high electrical conductivity and low thermal conductivity, and (2) proper choice of doping for high Seebeck coefficient.

Gate-Induced Interfacial Superconductivity in 1T-SnSe2.

PubMed

Zeng, Junwen; Liu, Erfu; Fu, Yajun; Chen, Zhuoyu; Pan, Chen; Wang, Chenyu; Wang, Miao; Wang, Yaojia; Xu, Kang; Cai, Songhua; Yan, Xingxu; Wang, Yu; Liu, Xiaowei; Wang, Peng; Liang, Shi-Jun; Cui, Yi; Hwang, Harold Y; Yuan, Hongtao; Miao, Feng

2018-02-14

Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides, and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. Here, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe 2 , a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature T c ≈ 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on (1) a 2D Tinkham description of the angle-dependent upper critical field B c2 , (2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane B c2 approaching zero temperature was found to be 2-3 times higher than the Pauli limit, which might be related to an electric field-modulated spin-orbit interaction. Such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.

Electrosorption capacitance of nanostructured carbon-based materials.

PubMed

Hou, Chia-Hung; Liang, Chengdu; Yiacoumi, Sotira; Dai, Sheng; Tsouris, Costas

2006-10-01

The fundamental mechanism of electrosorption of ions developing a double layer inside nanopores was studied via a combination of experimental and theoretical studies. A novel graphitized-carbon monolithic material has proven to be a good electrical double-layer capacitor that can be applied in the separation of ions from aqueous solutions. An extended electrical double-layer model indicated that the pore size distribution plays a key role in determining the double-layer capacitance in an electrosorption process. Because of the occurrence of double-layer overlapping in narrow pores, mesopores and micropores make significantly different contributions to the double-layer capacitance. Mesopores show good electrochemical accessibility. Micropores present a slow mass transfer of ions and a considerable loss of double-layer capacitance, associated with a shallow potential distribution inside pores. The formation of the diffuse layer inside the micropores determines the magnitude of the double-layer capacitance at low electrolyte concentrations and at conditions close to the point of zero charge of the material. The effect of the double-layer overlapping on the electrosorption capacitance can be reduced by increasing the pore size, electrolyte concentration, and applied potential. The results are relevant to water deionization.

Phase, current, absorbance, and photoluminescence of double and triple metal ion-doped synthetic and salmon DNA thin films

NASA Astrophysics Data System (ADS)

Chopade, Prathamesh; Reddy Dugasani, Sreekantha; Reddy Kesama, Mallikarjuna; Yoo, Sanghyun; Gnapareddy, Bramaramba; Lee, Yun Woo; Jeon, Sohee; Jeong, Jun-Ho; Park, Sung Ha

2017-10-01

We fabricated synthetic double-crossover (DX) DNA lattices and natural salmon DNA (SDNA) thin films, doped with 3 combinations of double divalent metal ions (M2+)-doped groups (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and single combination of a triple M2+-doped group (Cu2+-Ni2+-Co2+) at various concentrations of M2+ ([M2+]). We evaluated the optimum concentration of M2+ ([M2+]O) (the phase of M2+-doped DX DNA lattices changed from crystalline (up to ([M2+]O) to amorphous (above [M2+]O)) and measured the current, absorbance, and photoluminescent characteristics of multiple M2+-doped SDNA thin films. Phase transitions (visualized in phase diagrams theoretically as well as experimentally) from crystalline to amorphous for double (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and triple (Cu2+-Ni2+-Co2+) dopings occurred between 0.8 mM and 1.0 mM of Ni2+ at a fixed 0.5 mM of Co2+, between 0.6 mM and 0.8 mM of Co2+ at a fixed 3.0 mM of Cu2+, between 0.6 mM and 0.8 mM of Ni2+ at a fixed 3.0 mM of Cu2+, and between 0.6 mM and 0.8 mM of Co2+ at fixed 2.0 mM of Cu2+ and 0.8 mM of Ni2+, respectively. The overall behavior of the current and photoluminescence showed increments as increasing [M2+] up to [M2+]O, then decrements with further increasing [M2+]. On the other hand, absorbance at 260 nm showed the opposite behavior. Multiple M2+-doped DNA thin films can be used in specific devices and sensors with enhanced optoelectric characteristics and tunable multi-functionalities.

Thickness dependent structural, optical and electrical properties of Se85In12Bi3 nanochalcogenide thin films

NASA Astrophysics Data System (ADS)

Tripathi, Ravi P.; Zulfequar, M.; Khan, Shamshad A.

2018-04-01

Our aim is to study the thickness dependent effects on structure, electrical and optical properties of Se85In12Bi3 nanochalcogenide thin films. Bulk alloy of Se85In12Bi3 was synthesized by melt-quenching technique. The amorphous as well as glassy nature of Se85In12Bi3 chalcogenide was confirmed by non-isothermal Differential Scanning Calorimetry (DSC) measurements. The nanochalcogenide thin films of thickness 30, 60 and 90 nm were prepared on glass/Si wafer substrate using Physical Vapour Condensation Technique (PVCT). From XRD studies it was found that thin films have amorphous texture. The surface morphology and particle size of films were studied by Field Emission Scanning Electron Microscope (FESEM). From optical studies, different optical parameters were estimated for Se85In12Bi3 thin films at different thickness. It was found that the absorption coefficient (α) and extinction coefficient (k) increases with photon energy and decreases with film thickness. The optical absorption process followed the rule of indirect transitions and optical band gap were found to be increase with film thickness. The value of Urbach energy (Et) and steepness parameter (σ) were also calculated for different film thickness. For electrical studies, dc-conductivity measurement was done at different temperature and activation energy (ΔEc) were determined and found to be increase with film thickness.

Optical and electrical properties of TiOPc doped Alq{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramar, M.; Suman, C. K., E-mail: sumanck@nplindia.org; Tyagi, Priyanka

2015-06-24

The Titanyl phthalocyanine (TiOPc) was doped in Tris (8-hydroxyquinolinato) aluminum (Alq3) with different concentration. The thin film of optimized doping concentration was studied extensively for optical and electrical properties. The optical properties, studied using ellipsometry, absorption and photoluminescence. The absorption peak of Alq{sub 3} and TiOPc was observed at 387 nm and 707 nm and the photo-luminescence intensity (PL) peak of doped thin film was observed at 517 nm. The DC and AC electrical properties of the thin film were studied by current density-voltage (J-V) characteristics and impedance over a frequency range of 100 Hz - 1 MHz. The electron mobility calculated from trap-free space-chargemore » limited region (SCLC) is 0.17×10{sup −5} cm{sup 2}/Vs. The Cole-Cole plots shows that the TiOPc doped Alq{sub 3} thin film can be represented by a single parallel resistance R{sub P} and capacitance C{sub P} network with a series resistance R{sub S} (10 Ω). The value of R{sub P} and C{sub P} at zero bias was 1587 Ω and 2.568 nF respectively. The resistance R{sub P} decreases with applied bias whereas the capacitance C{sub P} remains almost constant.« less

Influence of stress on the structural and dielectric properties of rf magnetron sputtered zinc oxide thin film

NASA Astrophysics Data System (ADS)

Menon, Rashmi; Sreenivas, K.; Gupta, Vinay

2008-05-01

Highly c axis oriented zinc oxide (ZnO) thin films have been prepared on 1737 Corning glass substrate by planar rf magnetron sputtering under varying pressure (10-50mTorr) and different oxygen percentage (40%-100%) in reactive gas mixtures. The as-grown ZnO thin films were found to have stress over a wide range from -6×1010to-9×107dynes/cm2. The presence of stress depends strongly on processing conditions, and films become almost stress free under a unique combination of sputtering pressure and reactive gas composition. The studies show a correlation of stress with structural and electrical properties of the ZnO thin film. The stressed films possess high electrical conductivity and exhibits strong dielectric dispersion over a wide frequency (1kHz-1MHz). The dielectric constant ɛ'(ω) of stress free ZnO film was almost frequency independent and was close to the bulk value. The measured value of dc conductivity, σdc(ω) and ac conductivity σac(ω) of stress free ZnO film was 1.3×10-9 and 6.8×10-5Ω-1cm-1, respectively. The observed variation in the structural and electrical properties of ZnO thin film with stress has been analyzed in the light of growth kinetics.

AC Application of HTS Conductors in Highly Dynamic Electric Motors

NASA Astrophysics Data System (ADS)

Oswald, B.; Best, K.-J.; Setzer, M.; Duffner, E.; Soell, M.; Gawalek, W.; Kovalev, L. K.

2006-06-01

Based on recent investigations we design highly dynamic electric motors up to 400 kW and linear motors up to 120 kN linear force using HTS bulk material and HTS tapes. The introduction of HTS tapes into AC applications in electric motors needs fundamental studies on double pancake coils under transversal magnetic fields. First theoretical and experimental results on AC field distributions in double-pancake-coils and corresponding AC losses will be presented. Based on these results the simulation of the motor performance confirms extremely high power density and efficiency of both types of electric motors. Improved characteristics of rare earth permanent magnets used in our motors at low temperatures give an additional technological benefit.

Field tuning the g factor in InAs nanowire double quantum dots.

PubMed

Schroer, M D; Petersson, K D; Jung, M; Petta, J R

2011-10-21

We study the effects of magnetic and electric fields on the g factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the electric-dipole spin resonance response, allowing selective single spin control. © 2011 American Physical Society

Simulation model for electron irradiated IGZO thin film transistors

NASA Astrophysics Data System (ADS)

Dayananda, G. K.; Shantharama Rai, C.; Jayarama, A.; Kim, Hyun Jae

2018-02-01

An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In-Ga-Zn-O (IGZO) thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.

Design and Fabrication of a Strain-Powered Microelectromechanical System (MEMS) Switch

DTIC Science & Technology

2014-09-01

release showing uniform folding upwards; the top edge appears to be anchored to the substrate, which necessitated a mask rewrite after reducing...underdeveloped resist causing the switch to be anchored (left), thin-film shearing at the contact edge (right), and thin- film edge anchoring (right). Geometry...a “hip” joint and an “ ankle ” joint—while a center hinge was designed to fold down at a “knee” joint and make electrical contact with an electrical

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors.

PubMed

Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

2016-10-11

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this 'electrical activation', the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

Electrical transport properties of thermally evaporated phthalocyanine (H 2Pc) thin films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Farid, A. M.; Attia, A. A.; Ali, H. A. M.

2006-08-01

Thin films of H 2Pc of various thicknesses have been deposited onto glass substrates using thermal evaporation technique at room temperature. The dark electrical resistivity measurements were carried out at different temperatures in the range 298-473 K. An estimation of mean free path ( lo) of charge carriers in H 2Pc thin films was attempted. Measurements of thermoelectric power confirm that H 2Pc thin films behave as a p-type semiconductor. The current density-voltage characteristics of Au/H 2Pc/Au at room temperature showed ohmic conduction mechanism at low voltages. At higher voltages the space-charge-limited conduction (SCLC) accompanied by an exponential trap distribution was dominant. The temperature dependence of current density allows the determination of some essential parameters such as the hole mobility ( μh), the total trap concentration ( Nt), the characteristic temperature ( Tt) and the trap density P( E).

Multi-functional properties of CaCu3Ti4O12 thin films

NASA Astrophysics Data System (ADS)

Felix, A. A.; Rupp, J. L. M.; Varela, J. A.; Orlandi, M. O.

2012-09-01

In this work, electric transport properties of CaCu3Ti4O12 (CCTO) thin films were investigated for resistive switching, rectifying and gas sensor applications. Single phase CCTO thin films were produced by polymeric precursor method (PPM) on different substrates and their electrical properties were studied. Films produced on LNO/Si substrates have symmetrical non-ohmic current-voltage characteristics, while films deposited on Pt/Si substrates have a highly asymmetrical non-ohmic behavior which is related to a metal-semiconductor junction formed at the CCTO/Pt interface. In addition, results confirm that CCTO has a resistive switching response which is enhanced by Schottky contacts. Sensor response tests revealed that CCTO films are sensitive to oxygen gas and exhibit n-type conductivity. These results demonstrate the versatility of CCTO thin film prepared by the PPM method for gas atmosphere or bias dependent resistance applications.

Thin-film chip-to-substrate interconnect and methods for making same

DOEpatents

Tuckerman, D.B.

1988-06-06

Integrated circuit chips are electrically connected to a silicon wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability. 6 figs.

Thin-film chip-to-substrate interconnect and methods for making same

DOEpatents

Tuckerman, David B.

1991-01-01

Integrated circuit chips are electrically connected to a silica wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin metal lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability.

Multifield Control of Domains in a Room-Temperature Multiferroic 0.85BiTi0.1Fe0.8Mg0.1O3-0.15CaTiO3 Thin Film.

PubMed

Jia, Tingting; Fan, Ziran; Yao, Junxiang; Liu, Cong; Li, Yuhao; Yu, Junxi; Fu, Bi; Zhao, Hongyang; Osada, Minoru; Esfahani, Ehsan Nasr; Yang, Yaodong; Wang, Yuanxu; Li, Jiang-Yu; Kimura, Hideo; Cheng, Zhenxiang

2018-06-20

Single-phase materials that combine electric polarization and magnetization are promising for applications in multifunctional sensors, information storage, spintronic devices, etc. Following the idea of a percolating network of magnetic ions (e.g., Fe) with strong superexchange interactions within a structural scaffold with a polar lattice, a solid solution thin film with perovskite structure at a morphotropic phase boundary with a high level of Fe atoms on the B site of perovskite structure is deposited to combine both ferroelectric and ferromagnetic ordering at room temperature with magnetoelectric coupling. In this work, a 0.85BiTi 0.1 Fe 0.8 Mg 0.1 O 3 -0.15CaTiO 3 thin film has been deposited by pulsed laser deposition (PLD). Both the ferroelectricity and the magnetism were characterized at room temperature. Large polarization and a large piezoelectric effective coefficient d 33 were obtained. Multifield coupling of the thin film has been characterized by scanning force microscopy. Ferroelectric domains and magnetic domains could be switched by magnetic field ( H), electric field ( E), mechanical force ( F), and, indicating that complex cross-coupling exists among the electric polarization, magnetic ordering and elastic deformation in 0.85BiTi 0.1 F e0.8 Mg 0.1 O 3 -0.15CaTiO 3 thin film at room temperature. This work also shows the possibility of writing information with electric field, magnetic field, and mechanical force and then reading data by magnetic field. We expect that this work will benefit information applications.

Effect of Ionic Strength and Surface Charge Density on the Kinetics of Cellulose Nanocrystal Thin Film Swelling.

PubMed

Reid, Michael S; Kedzior, Stephanie A; Villalobos, Marco; Cranston, Emily D

2017-08-01

This work explores cellulose nanocrystal (CNC) thin films (<50 nm) and particle-particle interactions by investigating film swelling in aqueous solutions with varying ionic strength (1-100 mM). CNC film hydration was monitored in situ via surface plasmon resonance, and the kinetics of liquid uptake were quantified. The contribution of electrostatic double-layer forces to film swelling was elucidated by using CNCs with different surface charges (anionic sulfate half ester groups, high and low surface charge density, and cationic trimethylammonium groups). Total water uptake in the thin films was found to be independent of ionic strength and surface chemistry, suggesting that in the aggregated state van der Waals forces dominate over double-layer forces to hold the films together. However, the rate of swelling varied significantly. The water uptake followed Fickian behavior, and the measured diffusion constants decreased with the ionic strength gradient between the film and the solution. This work highlights that nanoparticle interactions and dispersion are highly dependent on the state of particle aggregation and that the rate of water uptake in aggregates and thin films can be tailored based on surface chemistry and solution ionic strength.

Core-Shell Double Gyroid Structure Formed by Linear ABC Terpolymer Thin Films.

PubMed

Antoine, Ségolène; Aissou, Karim; Mumtaz, Muhammad; Telitel, Siham; Pécastaings, Gilles; Wirotius, Anne-Laure; Brochon, Cyril; Cloutet, Eric; Fleury, Guillaume; Hadziioannou, Georges

2018-05-01

The synthesis and self-assembly in thin-film configuration of linear ABC triblock terpolymer chains consisting of polystyrene (PS), poly(2-vinylpyridine) (P2VP), and polyisoprene (PI) are described. For that purpose, a hydroxyl-terminated PS-b-P2VP (45 kg mol -1 ) building block and a carboxyl-terminated PI (9 kg mol -1 ) are first separately prepared by anionic polymerization, and then are coupled via a Steglich esterification reaction. This quantitative and metal-free catalyst synthesis route reveals to be very interesting since functionalization and purification steps are straightforward, and well-defined terpolymers are produced. A solvent vapor annealing (SVA) process is used to promote the self-assembly of frustrated PS-b-P2VP-b-PI chains into a thin-film core-shell double gyroid (Q 230 , space group: Ia3¯d) structure. As terraces are formed within PS-b-P2VP-b-PI thin films during the SVA process under a CHCl 3 vapor, different plane orientations of the Q 230 structure ((211), (110), (111), and (100)) are observed at the polymer-air interface depending on the film thickness. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Double fillet lap of laser welding of thin sheet AZ31B Mg alloy

NASA Astrophysics Data System (ADS)

Ishak, Mahadzir; Salleh, M. N. M.

2018-05-01

In this paper, we describe the experimental laser welding of thin sheet AZ31B using double fillet lap joint method. Laser welding is capable of producing high quality weld seams especially for small weld bead on thin sheet product. In this experiment, both edges for upper and lower sheets were subjected to the laser beam from the pulse wave (PW) mode of fiber laser. Welded sample were tested their joint strength by tensile-shear strength method and the fracture loads were studied. Strength for all welded samples were investigated and the effect of laser parameters on the joint strength and appearances were studied. Pulsed energy (EP) from laser process give higher effect on joint strength compared to the welding speed (WS) and angle of irradiation (AOI). Highest joint strength was possessed by sample with high EP with the same value of WS and AOI. The strength was low due to the crack defect at the centre of weld region.

Incorporation of layered double nanomaterials in thin film nanocomposite nanofiltration membrane for magnesium sulphate removal

NASA Astrophysics Data System (ADS)

Hanis Tajuddin, Muhammad; Yusof, Norhaniza; Salleh, Wan Norharyati Wan; Fauzi Ismail, Ahmad; Hanis Hayati Hairom, Nur; Misdan, Nurasyikin

2018-03-01

Thin film nanocomposite (TFN) membrane with copper-aluminium layered double hydroxides (LDH) incorporated into polyamide (PA) selective layer has been prepared for magnesium sulphate salt removal. 0, 0.05, 0.1, 0.15, 0.2 wt% of LDH were dispersed in the trimesoyl chloride (TMC) in n-hexane as organic solution and embedded into PA layer during interfacial polymerization with piperazine. The fabricated membranes were further characterized to evaluate its morphological structure and membrane surface hydrophilicity. The TFN membranes performance were evaluated with divalent salt magnesium sulphate (MgSO4) removal and compared with thin film composite (TFC). The morphological structures of TFN membranes were altered and the surface hydrophilicity were enhanced with addition of LDH. Incorporation of LDH has improved the permeate water flux by 82.5% compared to that of TFC membrane with satisfactory rejection of MgSO4. This study has experimentally validated the potential of LDH to improve the divalent salt separation performance for TFN membranes.

Double anisotropic electrically conductive flexible Janus-typed membranes.

PubMed

Li, Xiaobing; Ma, Qianli; Tian, Jiao; Xi, Xue; Li, Dan; Dong, Xiangting; Yu, Wensheng; Wang, Xinlu; Wang, Jinxian; Liu, Guixia

2017-12-07

Novel type III anisotropic conductive films (ACFs), namely flexible Janus-typed membranes, were proposed, designed and fabricated for the first time. Flexible Janus-typed membranes composed of ordered Janus nanobelts were constructed by electrospinning, which simultaneously possess fluorescence and double electrically conductive anisotropy. For the fabrication of the Janus-typed membrane, Janus nanobelts comprising a conductive side and an insulative-fluorescent side were primarily fabricated, and then the Janus nanobelts are arranged into parallel arrays using an aluminum rotary drum as the collector to obtain a single anisotropically conductive film. Subsequently, a secondary electrospinning process was applied to the as-prepared single anisotropically conductive films to acquire the final Janus-typed membrane. For this Janus-typed membrane, namely its left-to-right structure, anisotropic electrical conduction synchronously exists on both sides, and furthermore, the two electrically conductive directions are perpendicular. By modulating the amount of Eu(BA) 3 phen complex and conducting polyaniline (PANI), the characteristics and intensity of the fluorescence-electricity dual-function in the membrane can be tuned. The high integration of this peculiar Janus-typed membrane with simultaneous double electrically conductive anisotropy-fluorescent dual-functionality is successfully realized in this study. This design philosophy and preparative technique will provide support for the design and construction of new types of special nanostructures with multi-functionality.

Ion heating and characteristics of ST plasma used by double-pulsing CHI on HIST

NASA Astrophysics Data System (ADS)

Hanao, Takafumi; Hirono, Hidetoshi; Hyobu, Takahiro; Ito, Kengo; Matsumoto, Keisuke; Nakayama, Takashi; Oki, Nobuharu; Kikuchi, Yusuke; Fukumoto, Naoyuki; Nagata, Masayoshi

2013-10-01

Multi-pulsing Coaxial Helicity Injection (M-CHI) is an efficient current drive and sustainment method used in spheromak and spherical torus (ST). We have observed plasma current/flux amplification by double pulsing CHI. Poloidal ion temperature measured by Ion Doppler Spectrometer (IDS) has a peak at plasma core region. In this region, radial electric field has a negative peak. At more inboard side that is called separatrix between closed flux region and inner open flux region, poloidal flow has a large shear and radial electric field changes the polarity. After the second CHI pulse, we observed sharp and rapid ion heating at plasma core region and separatrix. In this region, the poloidal ion temperature is selective heating because electron temperature is almost uniform. At this time, flow shear become larger and radial electric field is amplified at separatorix. These effects produce direct heating of ion through the viscous flow damping. Furthermore, we observed decrease of electron density at separatrix. Decreased density makes Hall dynamo electric field as two-fluid effect. When the ion temperature is increasing, dynamo electric field is observed at separatrix. It may have influence with the ion heating. We will discuss characteristic of double pulsing CHI driven ST plasmas and correlation of direct heating of ion with dynamo electric field and any other parameters.

Chemical and Physical Approaches to the Modulation of the Electronic Structure, Conductivities and Optical Properties of SWNT Thin Films

NASA Astrophysics Data System (ADS)

Moser, Matthew Lee

Since their discovery two decades ago, single walled carbon nanotubes (SWNT) have created an expansion of scientific interest that continues to grow to this day. This is due to a good balance between presence of bandgap, chemical reactivity and electrical conductivity. By interconnection of the individual nanotubes or modulation of the SWNT's electronic states, electronic devices made with thin films can become candidates for next generation electronics in areas such as memory devices, spintronics, energy storage devices and optoelectronics. My thesis focuses on the modulation of the electronic structure, optical properties and transport characteristics of single walled carbon nanotube films and their application in electronic and optoelectronic devices. Individual SWNTs have exceptional electronic properties but are difficult to manipulate for use in electronic devices. Alternatively, devices utilize SWNTs in thin films. SWNT thin films, however, may lose some of the properties due to Schottky barriers and electron hoping between metal-nanotube junctions and individual nanotubes within the film, respectively. Until recently, there has been no known route to preserve both conjugation and electrical properties. Prior attempts using covalent chemical functionalization led to re-hybridization of sp2 carbon centers to sp3, which introduces defects into the material and results in a decrease of electron mobility. As was discovered in Haddon Research group, depositing Group VI transition metals via atomic vapor deposition into SWNT films results in formation of bis-hexahapto covalent bonds. This (eta6-SWNT) Metal (eta6-SWNT) type of bonding was found to interconnect the delocalized systems without inducing structural re-hybridization and results in a decrease of the thin films electrical resistance. Recently, with the assistance of electron beam deposition, we deposited atomic metal vapor of various lanthanide metals on the SWNT thin films with the idea that they would also form covalent interconnects between nanotube sidewalls. In the case of highly electropositive lanthanides, the possibility of hexahapto bonding combined with ionic character can be evaluated and theorized. We have reported the first use of lanthanides to enhance the conductivities of SWNT thin films and showed that these metals can not only form bis-hexahapto interconnects at the SWNT junctions but can also inject electrons into the conduction bands of the SWNTs, forming a new type of mixed covalent-ionic bonding in the SWNT network. By monitoring electrical resistance and taking spectroscopic measurements of the Near-Infrared region we are able to show the correlation between enhanced conductivity and suppression of the S 11 interband transition of semiconducting SWNTs. Potential applications of SWNT thin films as electrochromic windows require reversible modulation of the electronic structure. In order to fabricate SWNTs devices which allow for this behavior it is necessary to modulate the electronic structure by physical means such as the application of an electrical potential. We found that ionic solutions can assist with maintaining complete suppression of two Van Hove singularities in the Density of States of semiconducting SWNTs which results in optically transparent windows in the Near-Infrared region, similar to the effect seen with the incorporation of atomic lanthanide metals in thin films. We demonstrate this behavior to provide a route to nanotube based optoelectronic devices in which we use electric fields to reversibly dope the SWNT films and thereby achieve controllable modulation of optical properties of SWNT thin film.

Method of making radio frequency ion source antenna

DOEpatents

Ehlers, Kenneth W.; Leung, Ka-Ngo

1988-01-01

In the method, the radio frequency (RF) antenna is made by providing a clean coil made of copper tubing or other metal conductor, which is coated with a tacky organic binder, and then with a powdered glass frit, as by sprinkling the frit uniformly over the binder. The coil is then heated internally in an inert gas atmosphere, preferably by passing an electrical heating current along the coil. Initially, the coil is internally heated to about 200.degree. C. to boil off the water from the binder, and then to about 750.degree. C.-850.degree. C. to melt the glass frit, while also burning off the organic binder. The melted frit forms a molten glass coating on the metal coil, which is then cooled to solidify the glass, so that the metal coil is covered with a thin continuous homogeneous impervious glass coating of substantially uniform thickness. The glass coating affords complete electrical insulation and complete dielectric protection for the metal coil of the RF antenna, to withstand voltage breakdown and to prevent sputtering, while also doubling the plasma generating efficiency of the RF antenna, when energized with RF power in the vacuum chamber of an ion source for a particle accelerator or the like. The glass frit preferably contains apprxoimately 45% lead oxide.

Nonlinear effects on electrophoresis of a charged dielectric nanoparticle in a charged hydrogel medium

NASA Astrophysics Data System (ADS)

Bhattacharyya, S.; De, Simanta

2016-09-01

The impact of the solid polarization of a charged dielectric particle in gel electrophoresis is studied without imposing a weak-field or a thin Debye length assumption. The electric polarization of a dielectric particle due to an external electric field creates a non-uniform surface charge density, which in turn creates a non-uniform Debye layer at the solid-gel interface. The solid polarization of the particle, the polarization of the double layer, and the electro-osmosis of mobile ions within the hydrogel medium create a nonlinear effect on the electrophoresis. We have incorporated those nonlinear effects by considering the electrokinetics governed by the Stokes-Brinkman-Nernst-Planck-Poisson equations. We have computed the governing nonlinear coupled set of equations numerically by adopting a finite volume based iterative algorithm. Our numerical method is tested for accuracy by comparing with several existing results on free-solution electrophoresis as well as results based on the Debye-Hückel approximation. Our computed result shows that the electrophoretic velocity decreases with the rise of the particle dielectric permittivity constant and attains a saturation limit at large values of permittivity. A significant impact of the solid polarization is found in gel electrophoresis compared to the free-solution electrophoresis.

Method of making radio frequency ion source antenna and such antenna

DOEpatents

Ehlers, K.W.; Leung, K.N.

1985-05-22

In the method, the radio frequency (rf) antenna is made by providing a clean coil made of copper tubing or other metal conductor, which is coated with a tacky organic binder, and then with a powdered glass frit, as by sprinkling the frit uniformly over the binder. The coil is then heated internally in an inert gas atmosphere, preferably by passing an electrical heating current along the coil. Initially, the coil is internally heated to about 200/sup 0/C to boil off the water from the binder, and then to about 750 to 850/sup 0/C to melt the glass frit, while also burning off the organic binder. The melted frit forms a molten glass coating on the metal coil, which is then cooled to solidify the glass, so that the metal coil is covered with a thin continuous homogeneous impervious glass coating of substantially uniform thickness. The glass coating affords complete electrical insulation and complete dielectric protection for the metal coil of the rf antenna, to withstand voltage breakdown and to prevent sputtering, while also doubling the plasma generating efficiency of the rf antenna, when energized with RF power in the vacuum chamber of an ion source for a particle accelerator or the like. The glass frit preferably contains approximately 45% lead oxide.

Electrokinetic flows through a parallel-plate channel with slipping stripes on walls

NASA Astrophysics Data System (ADS)

Chu, Henry C. W.; Ng, Chiu-On

2011-11-01

Electrohydrodynamic flows through a periodically-micropatterned plane channel are considered. One unit of wall pattern consists of a slipping and non-slipping stripe, each with a distinct zeta potential. The problems are solved semi-analytically by eigenfunction expansion and point collocation. In the regime of linear response, the Onsager relation for the fluid and current fluxes are deduced as linear functions of the hydrodynamic and electric forcings. The phenomenological coefficients are explicitly expressed as functions of the channel height, the Debye parameter, the slipping area fraction of the wall, the intrinsic slip length, and the zeta potentials. We generalize the theoretical limits made in previous studies on electrokinetic flow over an inhomogeneously slipping surface. One should be cautious when applying these limits. First, when a surface is not 100% uniformly slipping but has a small fraction of area being covered by no-slip slots, the electroosmotic enhancement can be appreciably reduced. Second, when the electric double layer is only moderately thin, slipping-uncharged regions on a surface will have finite inhibition effect on the electroosmotic flow. Financial support by the RGC of the HKSAR, China: Project Nos. HKU715609E, HKU715510E; and the HKU under the Seed Funding Programme for Basic Research: Project Code 200911159024.

Improving pH sensitivity by field-induced charge regulation in flexible biopolymer electrolyte gated oxide transistors

NASA Astrophysics Data System (ADS)

Liu, Ning; Gan, Lu; Liu, Yu; Gui, Weijun; Li, Wei; Zhang, Xiaohang

2017-10-01

Electrical manipulation of charged ions in electrolyte-gated transistors is crucial for enhancing the electric-double-layer (EDL) gating effect, thereby improving their sensing abilities. Here, indium-zinc-oxide (IZO) based thin-film-transistors (TFTs) are fabricated on flexible plastic substrate. Acid doped chitosan-based biopolymer electrolyte is used as the gate dielectric, exhibiting an extremely high EDL capacitance. By regulating the dynamic EDL charging process with special gate potential profiles, the EDL gating effect of the chitosan-gated TFT is enhanced, and then resulting in higher pH sensitivities. An extremely high sensitivity of ∼57.8 mV/pH close to Nernst limit is achieved when the gate bias of the TFT sensor sweeps at a rate of 10 mV/s. Additionally, an enhanced sensitivity of 2630% in terms of current variation with pH range from 11 to 3 is realized when the device is operated in the ion depletion mode with a negative gate bias of -0.7 V. Robust ionic modulation is demonstrated in such chitosan-gated sensors. Efficiently driving the charged ions in the chitosan-gated IZO-TFT provides a new route for ultrasensitive, low voltage, and low-cost biochemical sensing technologies.

Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khan, Majid, E-mail: majids@hotmail.com; Islam, Mohammad, E-mail: mohammad.islam@gmail.com

2013-12-15

Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thinmore » films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ∼550 nm and electrical resistivity value of 0.57 × 10{sup −4} Ω cm.« less

Fabrication and performance of a double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O thin film detector

NASA Astrophysics Data System (ADS)

Zhou, Wei; Yin, Yiming; Yao, Niangjuan; Jiang, Lin; Qu, Yue; Wu, Jing; Gao, Y. Q.; Huang, Jingguo; Huang, Zhiming

2018-01-01

A thermal sensitive infrared and THz detector was fabricated by a double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O films. The Mn-Co-Ni-O material, as one type of transition metal oxides, has long been used as a candidate for thermal sensors or infrared detectors. The resistivity of a most important Mn-Co-Ni-O thin film, Mn1. 96Co0.96Ni0.48O4(MCN) , is about 200 Ω·cm at room temperature, which ranges about 2 orders larger than that of VOx detectors. Therefore, the thickness of a typical squared Mn-Co-Ni-O IR detector should be about 10 μm, which is too large for focal plane arrays applications. To reduce the resistivity of Mn-Co-Ni-O thin film, 1/6 of Co element was replaced by Cu. Meanwhile, a cover layer of MCN film was deposited onto the Mn-Co-Ni-Cu-O film to improve the long term stability. The detector fabricated by the double layered Mn-Co-Ni-O/Mn-Co-Ni-Cu-O films showed large response to blackbody and 170 GHz radiation. The NEP of the detector was estimated to be the order of 10-8 W/Hz0. 5. By applying thermal isolation structure and additional absorption materials, the detection performance can be largely improved by 1-2 orders according to numerical estimation. The double layered Mn-Co-Ni-O film detector shows great potentials in applications in large scale IR detection arrays, and broad-band imaging.

When every cent counts

NASA Astrophysics Data System (ADS)

Egan, Renate J.; Chang, Nathan L.

2018-05-01

Photovoltaic electricity is increasingly competitive with conventional electricity generation, and cost analyses are now being developed for early-stage technologies. A recent techno-economic analysis looks at thin-film tandem photovoltaics to inform research directions.

Chemical stability and electrical performance of dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide thin-film transistors using a solution process.

PubMed

Kim, Chul Ho; Rim, You Seung; Kim, Hyun Jae

2013-07-10

We investigated the chemical stability and electrical properties of dual-active-layered zinc-tin-oxide (ZTO)/indium-gallium-zinc-oxide (IGZO) structures (DALZI) with the durability of the chemical damage. The IGZO film was easily corroded or removed by an etchant, but the DALZI film was effectively protected by the high chemical stability of ZTO. Furthermore, the electrical performance of the DALZI thin-film transistor (TFT) was improved by densification compared to the IGZO TFT owing to the passivation of the pin holes or pore sites and the increase in the carrier concentration due to the effect of Sn(4+) doping.

Electrically tunable infrared metamaterial devices

DOEpatents

Brener, Igal; Jun, Young Chul

2015-07-21

A wavelength-tunable, depletion-type infrared metamaterial optical device is provided. The device includes a thin, highly doped epilayer whose electrical permittivity can become negative at some infrared wavelengths. This highly-doped buried layer optically couples with a metamaterial layer. Changes in the transmission spectrum of the device can be induced via the electrical control of this optical coupling. An embodiment includes a contact layer of semiconductor material that is sufficiently doped for operation as a contact layer and that is effectively transparent to an operating range of infrared wavelengths, a thin, highly doped buried layer of epitaxially grown semiconductor material that overlies the contact layer, and a metallized layer overlying the buried layer and patterned as a resonant metamaterial.

Unravelling the electrochemical double layer by direct probing of the solid/liquid interface

PubMed Central

Favaro, Marco; Jeong, Beomgyun; Ross, Philip N.; Yano, Junko; Hussain, Zahid; Liu, Zhi; Crumlin, Ethan J.

2016-01-01

The electrochemical double layer plays a critical role in electrochemical processes. Whilst there have been many theoretical models predicting structural and electrical organization of the electrochemical double layer, the experimental verification of these models has been challenging due to the limitations of available experimental techniques. The induced potential drop in the electrolyte has never been directly observed and verified experimentally, to the best of our knowledge. In this study, we report the direct probing of the potential drop as well as the potential of zero charge by means of ambient pressure X-ray photoelectron spectroscopy performed under polarization conditions. By analyzing the spectra of the solvent (water) and a spectator neutral molecule with numerical simulations of the electric field, we discern the shape of the electrochemical double layer profile. In addition, we determine how the electrochemical double layer changes as a function of both the electrolyte concentration and applied potential. PMID:27576762